Reversible Photochemical Control of Singlet Oxygen Generation Using Diarylethene Photochromic Switches

NARCIS (Netherlands)

Hou, Lili; Zhang, Xiaoyan; Pijper, Thomas C.; Browne, Wesley R.; Feringa, Bernard

2014-01-01

Reversible noninvasive control over the generation of singlet oxygen is demonstrated in a bicomponent system comprising a diarylethene photochromic switch and a porphyrin photosensitizer by selective irradiation at distinct wavelengths. The efficient generation of singlet oxygen by the

Identification of total reversible cysteine oxidation in an atherosclerosis model using a modified biotin switch assay.

Science.gov (United States)

Li, Ru; Huang, Jiqing; Kast, Juergen

2015-05-01

Oxidative stress due to the imbalance of reactive oxygen species (ROS) and the resulting reversible cysteine oxidation (CysOX) are involved in the early proatherogenic aspect of atherosclerosis. Given that the corresponding redox signaling pathways are still unclear, a modified biotin switch assay was developed to quantify the reversible CysOX in an atherosclerosis model established by using a monocytic cell line treated with platelet releasate. The accumulation of ROS was observed in the model system and validated in human primary monocytes. Through the application of the modified biotin switch assay, we obtained the first reversible CysOX proteome for this model. A total of 75 peptides, corresponding to 53 proteins, were quantified with oxidative modification. The bioinformatics analysis of these CysOX-containing proteins highlighted biological processes including glycolysis, cytoskeleton arrangement, and redox regulation. Moreover, the reversible oxidation of three glycolysis enzymes was observed using this method, and the regulation influence was verified by an enzyme activity assay. NADPH oxidase (NOX) inhibition treatment, in conjunction with the modified biotin switch method, was used to evaluate the global CysOX status. In conclusion, this versatile modified biotin switch assay provides an approach for the quantification of all reversible CysOX and for the study of redox signaling in atherosclerosis as well as in diseases in other biological systems.

Morphing hydrogel patterns by thermo-reversible fluorescence switching.

Science.gov (United States)

Bat, Erhan; Lin, En-Wei; Saxer, Sina; Maynard, Heather D

2014-07-01

Stimuli responsive surfaces that show reversible fluorescence switching behavior in response to temperature changes were fabricated. Oligo(ethylene glycol) methacrylate thermoresponsive polymers with amine end-groups were prepared by atom transfer radical polymerization (ATRP). The polymers were patterned on silicon surfaces by electron beam (e-beam) lithography, followed by conjugation of self-quenching fluorophores. Fluorophore conjugated hydrogel thin films were bright when the gels were swollen; upon temperature-induced collapse of the gels, self-quenching of the fluorophores led to significant attenuation of fluorescence. Importantly, the fluorescence was regained when the temperature was cooled. The fluorescence switching behavior of the hydrogels for up to ten cycles was investigated and the swelling-collapse was verified by atomic force microscopy. Morphing surfaces that change shape several times upon increase in temperature were obtained by patterning multiple stimuli responsive polymers. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coupled Reversible and Irreversible Bistable Switches Underlying TGFβ-induced Epithelial to Mesenchymal Transition

Science.gov (United States)

Tian, Xiao-Jun; Zhang, Hang; Xing, Jianhua

2013-01-01

Epithelial to mesenchymal transition (EMT) plays an important role in embryonic development, tissue regeneration, and cancer metastasis. Whereas several feedback loops have been shown to regulate EMT, it remains elusive how they coordinately modulate EMT response to TGF-β treatment. We construct a mathematical model for the core regulatory network controlling TGF-β-induced EMT. Through deterministic analyses and stochastic simulations, we show that EMT is a sequential two-step program in which an epithelial cell first is converted to partial EMT then to the mesenchymal state, depending on the strength and duration of TGF-β stimulation. Mechanistically the system is governed by coupled reversible and irreversible bistable switches. The SNAIL1/miR-34 double-negative feedback loop is responsible for the reversible switch and regulates the initiation of EMT, whereas the ZEB/miR-200 feedback loop is accountable for the irreversible switch and controls the establishment of the mesenchymal state. Furthermore, an autocrine TGF-β/miR-200 feedback loop makes the second switch irreversible, modulating the maintenance of EMT. Such coupled bistable switches are robust to parameter variation and molecular noise. We provide a mechanistic explanation on multiple experimental observations. The model makes several explicit predictions on hysteretic dynamic behaviors, system response to pulsed stimulation, and various perturbations, which can be straightforwardly tested. PMID:23972859

When global rule reversal meets local task switching: The neural mechanisms of coordinated behavioral adaptation to instructed multi-level demand changes.

Science.gov (United States)

Shi, Yiquan; Wolfensteller, Uta; Schubert, Torsten; Ruge, Hannes

2018-02-01

Cognitive flexibility is essential to cope with changing task demands and often it is necessary to adapt to combined changes in a coordinated manner. The present fMRI study examined how the brain implements such multi-level adaptation processes. Specifically, on a "local," hierarchically lower level, switching between two tasks was required across trials while the rules of each task remained unchanged for blocks of trials. On a "global" level regarding blocks of twelve trials, the task rules could reverse or remain the same. The current task was cued at the start of each trial while the current task rules were instructed before the start of a new block. We found that partly overlapping and partly segregated neural networks play different roles when coping with the combination of global rule reversal and local task switching. The fronto-parietal control network (FPN) supported the encoding of reversed rules at the time of explicit rule instruction. The same regions subsequently supported local task switching processes during actual implementation trials, irrespective of rule reversal condition. By contrast, a cortico-striatal network (CSN) including supplementary motor area and putamen was increasingly engaged across implementation trials and more so for rule reversal than for nonreversal blocks, irrespective of task switching condition. Together, these findings suggest that the brain accomplishes the coordinated adaptation to multi-level demand changes by distributing processing resources either across time (FPN for reversed rule encoding and later for task switching) or across regions (CSN for reversed rule implementation and FPN for concurrent task switching). © 2017 Wiley Periodicals, Inc.

Reversible switching in self-assembled monolayers of azobenzene thiolates on Au (111) probed by threshold photoemission

Energy Technology Data Exchange (ETDEWEB)

Heinemann, Nils, E-mail: heinemann@physik.uni-kiel.de [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, Leibnizstr. 19, 24098 Kiel (Germany); Grunau, Jan; Leissner, Till; Andreyev, Oleksiy; Kuhn, Sonja; Jung, Ulrich [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, Leibnizstr. 19, 24098 Kiel (Germany); Zargarani, Dordaneh; Herges, Rainer [Otto-Diels-Institut fuer Organische Chemie, Christian-Albrechts-Universitaet zu Kiel, Otto-Hahn-Platz 4, 24098 Kiel (Germany); Magnussen, Olaf; Bauer, Michael [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, Leibnizstr. 19, 24098 Kiel (Germany)

2012-06-19

Highlights: Black-Right-Pointing-Pointer Photoelectron spectroscopy of liquid phase prepared SAMs of azobenzene derivative. Black-Right-Pointing-Pointer Photo-induced reversible switching in densely packed SAM is monitored. Black-Right-Pointing-Pointer Maximum density of switched molecules in SAM is derived from photoemission data. Black-Right-Pointing-Pointer Switching reaction only enabled at defects sites within the molecular layer. - Abstract: The reversible photo- and thermally activated isomerization of the molecular switch 3-(4-(4-Hexyl-phenylazo)-phenoxy)-propane-1-thiol (ABT, short for AzoBenzeneThiol) deposited by self-assembly from solution on Au (111) was studied using laser-based photoelectron spectroscopy. Differences in the molecular dipole moment characteristic for the trans and the cis isomer of ABT were monitored via changes in the sample work function, accessible by detection of the threshold energy for photoemission. A quantitative analysis of our data shows that the fraction of molecules within the densely packed monolayer that undergoes a switching process is of the order of 1%. This result indicates the relevance of substrate and film defects required to overcome the steric or electronic hindrance of the isomerization reaction in a densely packed monolayer.

Switching field distribution and magnetization reversal process of FePt dot patterns

Energy Technology Data Exchange (ETDEWEB)

Ishio, S., E-mail: ishio@gipc.akita-u.ac.jp [Department of Materials Science and Engineering, Akita University, Akita 010-8502 (Japan); Takahashi, S.; Hasegawa, T.; Arakawa, A.; Sasaki, H. [Department of Materials Science and Engineering, Akita University, Akita 010-8502 (Japan); Yan, Z.; Liu, X. [Venture Business Laboratory, Akita University, Tegata Gakuen-machi, Akita 010-8502 (Japan); Kondo, Y.; Yamane, H.; Ariake, J. [Akita Prefectural R and D Center, 4-21 Sanuki, Akita 010-1623 (Japan); Suzuki, M.; Kawamura, N.; Mizumaki, M. [Japan Synchrotron Radiation Research Institute, 1-1-1, Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)

2014-06-01

The fabrication of FePt nanodots with a high structural quality and the control of their switching fields are key issues in realizing high density bit pattern recording. We have prepared FePt dot patterns for dots with 15–300 nm diameters by electron beam lithography and re-annealing, and studied the relation between magnetization reversal process and structure of FePt nanodots. The switching field (H{sub sw}) of dot patterns re-annealed at 710 °C for 240 min showed a bimodal distribution, where a higher peak was found at 5–6 T, and a lower peak was found at ∼2 T. It was revealed by cross-sectional TEM analysis that the structure of dots in the pattern can be classified into two groups. One group has a high degree of order with well-defined [0 0 1] crystalline growth, and the other group includes structurally-disturbed dots like [1 1 1] growth and twin crystals. This structural inhomogeneity causes the magnetic switching field distribution observed. - Highlights: • FePt dot patterns with 15–100 nm dot diameters were prepared by EB lithography. • Maximum coercivity of 30 kOe was found in the dot pattern with 30 nm in diameter. • Magnetization reversal was studied on the base of TEM analysis and LLG simulation.

Investigation of the switching characteristics in ferroelectrics by first-order reversal curve diagrams

International Nuclear Information System (INIS)

Stancu, Alexandru; Mitoseriu, Liliana; Stoleriu, Laurentiu; Piazza, Daniele; Galassi, Carmen; Ricinschi, Dan; Okuyama, Masanori

2006-01-01

First-order reversal curves (FORC) diagrams are proposed for describing the switching properties in ferroelectric materials. The method is applied for Pb(Zr,Ti)O 3 (PZT) ferroelectric ceramics and films with different P(E) hysteresis and microstructural characteristics. The separation of the reversible and irreversible contributions to the ferroelectric polarization is explained in terms of microstructural characteristics of the investigated samples. The influence of parameters as field frequency, crystallite orientation, ferroelectric fatigue and porosity degree on the FORC diagrams is discussed

Reversible adhesion switching of porous fibrillar adhesive pads by humidity.

Science.gov (United States)

Xue, Longjian; Kovalev, Alexander; Dening, Kirstin; Eichler-Volf, Anna; Eickmeier, Henning; Haase, Markus; Enke, Dirk; Steinhart, Martin; Gorb, Stanislav N

2013-01-01

We report reversible adhesion switching on porous fibrillar polystyrene-block-poly(2-vinyl pyridine) (PS-b-P2VP) adhesive pads by humidity changes. Adhesion at a relative humidity of 90% was more than nine times higher than at a relative humidity of 2%. On nonporous fibrillar adhesive pads of the same material, adhesion increased only by a factor of ~3.3. The switching performance remained unchanged in at least 10 successive high/low humidity cycles. Main origin of enhanced adhesion at high humidity is the humidity-induced decrease in the elastic modulus of the polar component P2VP rather than capillary force. The presence of spongelike continuous internal pore systems with walls consisting of P2VP significantly leveraged this effect. Fibrillar adhesive pads on which adhesion is switchable by humidity changes may be used for preconcentration of airborne particulates, pollutants, and germs combined with triggered surface cleaning.

Reversibility and switching options values in the geological disposal of radioactive waste

International Nuclear Information System (INIS)

Ionescu, Oana; Spaeter, Sandrine

2011-07-01

This article offers some economic insights for the debate on the reversible geological disposal of radioactive waste. Irreversibility due to large sunk costs, an important degree of flexibility and several sources of uncertainty are taken into account in the decision process relative to the radioactive waste disposal. We draw up a stochastic model in a continuous time framework to study the decision problem of a reversible repository project for the radioactive waste, with multiple disposal stages. We consider that the value of reversibility, related to the radioactive waste packages, is jointly affected by economic and technological uncertainty. These uncertainties are modeled, first, by a 2-Dimensional Geometric Brownian Motion, and, second, by a Geometric Brownian Motion with a Poisson jump process. A numerical analysis and a sensitivity study of various parameters are also proposed. Switching options values in the geological disposal of radioactive waste. (authors)

Reversible switching of fluorophore property based on intrinsic conformational transition of adenylate kinase during its catalytic cycle.

Science.gov (United States)

Fujii, Akira; Hirota, Shun; Matsuo, Takashi

2013-07-17

Adenylate kinase shows a conformational transition (OPEN and CLOSED forms) during substrate binding and product release to mediate the phosphoryl transfer between ADP and ATP/AMP. The protein motional characteristics will be useful to construct switching systems of fluorophore properties caused by the catalytic cycle of the enzyme. This paper demonstrates in situ reversible switching of a fluorophore property driven by the conformational transition of the enzyme. The pyrene-conjugated mutant adenylate kinase is able to switch the monomer/excimer emission property of pyrene on addition of ADP or P(1)P(5)-di(adenosine-5')pentaphosphate (Ap5A, a transition state analog). The observation under the dilute condition (~0.1 μM) indicates that the emission spectral change was caused by the motion of a protein molecule and not led by protein-protein interactions through π-π stacking of pyrene rings. The switching can be reversibly conducted by using hexokinase-coupling reaction. The fashion of the changes in emission intensities at various ligand concentrations is different between ADP, Mg(2+)-bound ADP, and Mg(2+)-bound Ap5A. The emission property switching is repeatable by a sequential addition of a substrate in a one-pot process. It is proposed that the property of a synthetic molecule on the enzyme surface is switchable in response to the catalytic cycle of adenylate kinase.

Surviving bacterial sibling rivalry: inducible and reversible phenotypic switching in Paenibacillus dendritiformis.

Science.gov (United States)

Be'er, Avraham; Florin, E-L; Fisher, Carolyn R; Swinney, Harry L; Payne, Shelley M

2011-01-01

Natural habitats vary in available nutrients and room for bacteria to grow, but successful colonization can lead to overcrowding and stress. Here we show that competing sibling colonies of Paenibacillus dendritiformis bacteria survive overcrowding by switching between two distinct vegetative phenotypes, motile rods and immotile cocci. Growing colonies of the rod-shaped bacteria produce a toxic protein, Slf, which kills cells of encroaching sibling colonies. However, sublethal concentrations of Slf induce some of the rods to switch to Slf-resistant cocci, which have distinct metabolic and resistance profiles, including resistance to cell wall antibiotics. Unlike dormant spores of P. dendritiformis, the cocci replicate. If cocci encounter conditions that favor rods, they secrete a signaling molecule that induces a switch to rods. Thus, in contrast to persister cells, P. dendritiformis bacteria adapt to changing environmental conditions by inducible and reversible phenotypic switching. In favorable environments, species may face space and nutrient limits due to overcrowding. Bacteria provide an excellent model for analyzing principles underlying overcrowding and regulation of density in nature, since their population dynamics can be easily and accurately assessed under controlled conditions. We describe a newly discovered mechanism for survival of a bacterial population during overcrowding. When competing with sibling colonies, Paenibacillus dendritiformis produces a lethal protein (Slf) that kills cells at the interface of encroaching colonies. Slf also induces a small proportion of the cells to switch from motile, rod-shaped cells to nonmotile, Slf-resistant, vegetative cocci. When crowding is reduced and nutrients are no longer limiting, the bacteria produce a signal that induces cocci to switch back to motile rods, allowing the population to spread. Genes encoding components of this phenotypic switching pathway are widespread among bacterial species, suggesting

Safety analysis of switching between reductive and oxidative conditions in a reaction coupling reverse flow reactor.

NARCIS (Netherlands)

van Sint Annaland, M.; Kuipers, J.A.M.; van Swaaij, Willibrordus Petrus Maria

2001-01-01

A new reverse flow reactor is developed where endothermic reactants (propane dehydrogenation) and exothermic reactants (fuel combustion) are fed sequentially to a monolithic catalyst, while periodically alternating the inlet and outlet positions. Upon switching from reductive to oxidative conditions

Zero field reversal probability in thermally assisted magnetization reversal

Science.gov (United States)

Prasetya, E. B.; Utari; Purnama, B.

2017-11-01

This paper discussed about zero field reversal probability in thermally assisted magnetization reversal (TAMR). Appearance of reversal probability in zero field investigated through micromagnetic simulation by solving stochastic Landau-Lifshitz-Gibert (LLG). The perpendicularly anisotropy magnetic dot of 50×50×20 nm3 is considered as single cell magnetic storage of magnetic random acces memory (MRAM). Thermally assisted magnetization reversal was performed by cooling writing process from near/almost Curie point to room temperature on 20 times runs for different randomly magnetized state. The results show that the probability reversal under zero magnetic field decreased with the increase of the energy barrier. The zero-field probability switching of 55% attained for energy barrier of 60 k B T and the reversal probability become zero noted at energy barrier of 2348 k B T. The higest zero-field switching probability of 55% attained for energy barrier of 60 k B T which corespond to magnetif field of 150 Oe for switching.

Observing others stay or switch - How social prediction errors are integrated into reward reversal learning.

Science.gov (United States)

Ihssen, Niklas; Mussweiler, Thomas; Linden, David E J

2016-08-01

Reward properties of stimuli can undergo sudden changes, and the detection of these 'reversals' is often made difficult by the probabilistic nature of rewards/punishments. Here we tested whether and how humans use social information (someone else's choices) to overcome uncertainty during reversal learning. We show a substantial social influence during reversal learning, which was modulated by the type of observed behavior. Participants frequently followed observed conservative choices (no switches after punishment) made by the (fictitious) other player but ignored impulsive choices (switches), even though the experiment was set up so that both types of response behavior would be similarly beneficial/detrimental (Study 1). Computational modeling showed that participants integrated the observed choices as a 'social prediction error' instead of ignoring or blindly following the other player. Modeling also confirmed higher learning rates for 'conservative' versus 'impulsive' social prediction errors. Importantly, this 'conservative bias' was boosted by interpersonal similarity, which in conjunction with the lack of effects observed in a non-social control experiment (Study 2) confirmed its social nature. A third study suggested that relative weighting of observed impulsive responses increased with increased volatility (frequency of reversals). Finally, simulations showed that in the present paradigm integrating social and reward information was not necessarily more adaptive to maximize earnings than learning from reward alone. Moreover, integrating social information increased accuracy only when conservative and impulsive choices were weighted similarly during learning. These findings suggest that to guide decisions in choice contexts that involve reward reversals humans utilize social cues conforming with their preconceptions more strongly than cues conflicting with them, especially when the other is similar. Copyright © 2016 The Authors. Published by Elsevier B

Skin Effect of Reversely Switched Dynistor in Short Pulse Discharge Application

Institute of Scientific and Technical Information of China (English)

Lin Liang; Yue-Hui Yu

2009-01-01

The skin effect in the reversely switched dynistor (RSD) devices is investigated in this paper. Based on the plasma bipolar drift model of the RSD, the current density distributions on the chip are simulated with considering the skin effect. The results indicate that the current density on the border can be several hundred to a thousand A/cm2 higher than that in the center of the chip. The skin effect becomes more prominent as the voltage increases and the inductance decreases in the main circuit. The phenomenon that most of a certain group of chips break over on the border has proved the existence of the skin effect.

DamX Controls Reversible Cell Morphology Switching in Uropathogenic Escherichia coli

DEFF Research Database (Denmark)

Khandige, Surabhi; Antoinette Asferg, Cecilie; Rasmussen, Karina Juhl

2016-01-01

undertaking targeted investigations that are challenging to perform in animal infection models. IMPORTANCE: Urinary tract infections (UTIs) are most often caused by uropathogenic Escherichia coli (UPEC) and account for a considerable health care burden. UPEC exhibits a dynamic lifestyle in the course....... In aiming to uncover genes underlying the phenomenon of UPEC morphotype switching, this study identifies damX, a cell division gene, as a mediator of reversible filamentation during UTI. DamX-mediated filamentation represents an additional pathway for bacterial cell shape control, an alternative to Sul......A-mediated FtsZ sequestration during E. coli uropathogenesis, and hence represents a potential target for combating UTI....

Annealing temperature dependent reversible wettability switching of micro/nano structured ZnO superhydrophobic surfaces

Science.gov (United States)

Velayi, Elmira; Norouzbeigi, Reza

2018-05-01

Superhydrophobic ZnO surfaces with reversibly tunable wettability were fabricated on stainless steel meshes via a facile chemical bath deposition method just by regulating the micro/nano structured ZnO needles without using chemical post modifications. The obtained surfaces can be easily and reversibly switched between superhydrophobic and superhydrophilic/underwater superoleophobic characteristics by altering the annealing temperatures. As-prepared sample exhibited long-term superhydrophobic properties with a water contact angle (WCA) of 163.8° ± 1.8° and contact angle hysteresis (CAH) of 1.1° ± 0.8°. The SEM, XRD, XPS and Raman analyses were employed to characterize the morphological features and surface chemistry of the prepared samples. SEM images showed the formation of ZnO micro/nanoneedles with a diameter of ∼90 nm on the substrate. The superhydrophobic ZnO surface was switched to highly hydrophilic and underwater superoleophobic properties with an oil contact angle (OCA) of about 172.5° after being annealed at 400 °C in air for 30 min and restored to superhydrophobic state again by altering the annealing temperature to 150 °C. Mechanical durability of the ZnO superhydrophobic surface was tested by an abrasion test. Results confirmed that the prepared surface exhibited an excellent robustness after 20 abrasion cycles under the pressure of 4.7 kPa.

Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

Science.gov (United States)

Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

2017-12-01

A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

KAUST Repository

Shen, Shida

2017-12-29

A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

Reversible switching of quantum cascade laser-modes using a pH-responsive polymeric cladding as transducer.

Science.gov (United States)

Basnar, Bernhard; Schartner, Stephan; Austerer, Maximilian; Andrews, Aaron Maxwell; Roch, Tomas; Schrenk, Werner; Strasser, Gottfried

2008-06-09

We present a novel approach for the reversible switching of the emission wavelength of a quantum cascade laser (QCL) using a halochromic cladding. An air-waveguide laser ridge is coated with a thin layer of polyacrylic acid. This cladding introduces losses corresponding to the absorption spectrum of the polymer. By changing the state of the polymer, the absorption spectrum and losses change, inducing a shift of 7 cm(-1) in the emission wavelength. This change is induced by exposure to acidic or alkaline vapors under ambient conditions and is fully reversible. Such lasers can be used as multi-color light source and as sensor for atmospheric pH.

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

Science.gov (United States)

Wang, Guangyu; Li, Chen; Chen, Yan; Xia, Yidong; Wu, Di; Xu, Qingyu

2016-11-14

Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO x layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoO x interface by the accumulation and depletion of oxygen vacancies.

Electric field controlled reversible magnetic anisotropy switching studied by spin rectification

International Nuclear Information System (INIS)

Zhou, Hengan; Fan, Xiaolong; Wang, Fenglong; Jiang, Changjun; Rao, Jinwei; Zhao, Xiaobing; Xue, Desheng; Gui, Y. S.; Hu, C.-M.

2014-01-01

In this letter, spin rectification was used to study the electric field controlled dynamic magnetic properties of the multiferroic composite which is a Co stripe with induced in-plane anisotropy deposited onto a Pb(Mg 1∕3 Nb 2∕3 )O 3 -PbTiO 3 substrate. Due to the coupling between piezoelectric and magnetoelastic effects, a reversible in-plane anisotropy switching has been realized by varying the history of the applied electric field. This merit results from the electric hysteresis of the polarization in the nonlinear piezoelectric regime, which has been proved by a butterfly type electric field dependence of the in-plane anisotropy field. Moreover, the electric field dependent effective demagnetization field and linewidth have been observed at the same time

Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

KAUST Repository

Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

2017-01-01

A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance

Aging specifically impairs switching to an allocentric navigational strategy.

Science.gov (United States)

Harris, Mathew A; Wiener, Jan M; Wolbers, Thomas

2012-01-01

Navigation abilities decline with age, partly due to deficits in numerous component processes. Impaired switching between these various processes (i.e., switching navigational strategies) is also likely to contribute to age-related navigational impairments. We tested young and old participants on a virtual plus maze task (VPM), expecting older participants to exhibit a specific strategy switching deficit, despite unimpaired learning of allocentric (place) and egocentric (response) strategies following reversals within each strategy. Our initial results suggested that older participants performed worse during place trial blocks but not response trial blocks, as well as in trial blocks following a strategy switch but not those following a reversal. However, we then separated trial blocks by both strategy and change type, revealing that these initial results were due to a more specific deficit in switching to the place strategy. Place reversals and switches to response, as well as response reversals, were unaffected. We argue that this specific "switch-to-place" deficit could account for apparent impairments in both navigational strategy switching and allocentric processing and contributes more generally to age-related decline in navigation.

Reversible superhydrophilicity and hydrophobicity switching of V2O5 thin films deposited by magnetron sputtering

Science.gov (United States)

Zhang, Chunzi; Peng, Zhiguang; Cui, Xiaoyu; Neil, Eric; Li, Yuanshi; Kasap, Safa; Yang, Qiaoqin

2018-03-01

V2O5 thin films are well-known "smart" materials due to their reversible wettability under UV irradiation and dark storage. Their surfaces are usually hydrophobic and turn into hydrophilic under UV irradiation. However, the V2O5 thin films deposited by magnetron sputtering in present work are superhydrophilic and turned into hydrophobic after days' of storage in air. This change can be recovered by heating. The effects of many factors including surface roughness, irradiation from visible light, UV, & X-ray, and storage in air & vacuum on the reversible switching of wettability were investigated. The results show that air absorption is the main factor causing the film surface change from superhydrophilicity to hydrophobicity.

Electric field controlled reversible magnetic anisotropy switching studied by spin rectification

Energy Technology Data Exchange (ETDEWEB)

Zhou, Hengan; Fan, Xiaolong, E-mail: fanxiaolong@lzu.edu.cn; Wang, Fenglong; Jiang, Changjun; Rao, Jinwei; Zhao, Xiaobing; Xue, Desheng [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Gui, Y. S.; Hu, C.-M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada)

2014-03-10

In this letter, spin rectification was used to study the electric field controlled dynamic magnetic properties of the multiferroic composite which is a Co stripe with induced in-plane anisotropy deposited onto a Pb(Mg{sub 1∕3}Nb{sub 2∕3})O{sub 3}-PbTiO{sub 3} substrate. Due to the coupling between piezoelectric and magnetoelastic effects, a reversible in-plane anisotropy switching has been realized by varying the history of the applied electric field. This merit results from the electric hysteresis of the polarization in the nonlinear piezoelectric regime, which has been proved by a butterfly type electric field dependence of the in-plane anisotropy field. Moreover, the electric field dependent effective demagnetization field and linewidth have been observed at the same time.

Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer

Directory of Open Access Journals (Sweden)

Y. S. Zhi

2016-01-01

Full Text Available Both unipolar resistive switching (URS and bipolar resistive switching (BRS behaviors are observed in Cu2O/Ga2O3 stacked layer. The conversion between BRS and URS is controllable and reversible. The switching operations in BRS mode requires smaller voltage than that in the URS mode. The oxygen vacancies closed to the Cu2O/Ga2O3 interface contributes to the BRS, and the bias-controlling filament formation/rupture in depletion layer is considered to contribute to the URS. The URS happens only in the negative voltage part due to the nature of directionality of the p-n junction. The process reported here can be developed to design memory device.

Reversible switch between the nanoporous and the nonporous state of amphiphilic block copolymer films regulated by selective swelling.

Science.gov (United States)

Yan, Nina; Wang, Yong

2015-09-21

Switchable nanoporous films, which can repeatedly alternate their porosities, are of great interest in a diversity of fields. Currently these intelligent materials are mostly based on polyelectrolytes and their porosities can change only in relatively narrow ranges, typically under wet conditions, severely limiting their applications. Here we develop a new system, which is capable of reversibly switching between a highly porous state and a nonporous state dozens of times regulated simply by exposure to selective solvents. In this system nanopores are created or reversibly eliminated in films of a block copolymer, polystyrene-block-poly(2-vinyl pyridine) (PS-b-P2VP), by exposing the films to P2VP-selective or PS-selective solvents, respectively. The mechanism of the switch is based on the selective swelling of the constituent blocks in corresponding solvents, which is a nondestructive and easily controllable process enabling the repeatable and ample switch between the open and the closed state. Systematic microscopic and ellipsometric characterization methods are performed to elucidate the pore-closing course induced by nonsolvents and the cycling between the pore-open and the pore-closed state up to 20 times. The affinity of the solvent for PS blocks is found to play a dominating role in determining the pore-closing process and the porosities of the pore-open films increase with the cycling numbers as a result of loose packing conditions of the polymer chains. We finally demonstrate the potential applications of these films as intelligent antireflection coatings and drug carriers.

Measurement of variable magnetic reversal paths in electrically contacted pseudo-spin-valve rings

International Nuclear Information System (INIS)

Hayward, T J; Llandro, J; Schackert, F D O; Morecroft, D; Balsod, R B; Bland, J A C; Castano, F J; Ross, C A

2007-01-01

In this work we show that the measurement of single magnetic reversal events is of critical importance in order to correctly characterize the switching of magnetic microstructures. Magnetoresistance measurements are performed on two pseudo-spin-valve ring structures with high enough signal to noise to allow the probing of single reversal events. Using this technique we acquire 'switching spectra' which demonstrate that the rings exhibit a range of variable reversal paths, including a bistable reversal mechanism of the hard layer, where the two switching routes have substantially different switching fields. The signature of the variable reversal paths would have been obscured in field cycle averaged data and in the bistable case would cause a fundamental misinterpretation of the reversal behaviour

Electrochemical Switching of Conductance with Diarylethene-Based Redox-Active Polymers

DEFF Research Database (Denmark)

Logtenberg, Hella; van der Velde, Jasper H. M.; de Mendoza, Paula

2012-01-01

Reversible switching of conductance using redox triggered switching of a polymer-modified electrode is demonstrated. A bifunctional monomer comprising a central electroswitchable core and two bithiophene units enables formation of a film through anodic electropolymerization. The conductivity...... of the polymer can be switched electrochemically in a reversible manner by redox triggered opening and closing of the diarylethene unit. In the closed state, the conductivity of the modified electrode is higher than in the open state....

The repetitive portion of the Xenopus IgH Mu switch region mediates orientation-dependent class switch recombination.

Science.gov (United States)

Zhang, Zheng Z; Pannunzio, Nicholas R; Lu, Zhengfei; Hsu, Ellen; Yu, Kefei; Lieber, Michael R

2015-10-01

Vertebrates developed immunoglobulin heavy chain (IgH) class switch recombination (CSR) to express different IgH constant regions. Most double-strand breaks for Ig CSR occur within the repetitive portion of the switch regions located upstream of each set of constant domain exons for the Igγ, Igα or Igϵ heavy chain. Unlike mammalian switch regions, Xenopus switch regions do not have a high G-density on the non-template DNA strand. In previous studies, when Xenopus Sμ DNA was moved to the genome of mice, it is able to support substantial CSR when it is used to replace the murine Sγ1 region. Here, we tested both the 2kb repetitive portion and the 4.6 kb full-length portions of the Xenopus Sμ in both their natural (forward) orientation relative to the constant domain exons, as well as the opposite (reverse) orientation. Consistent with previous work, we find that the 4.6 kb full-length Sμ mediates similar levels of CSR in both the forward and reverse orientations. Whereas, the forward orientation of the 2kb portion can restore the majority of the CSR level of the 4.6 kb full-length Sμ, the reverse orientation poorly supports R-looping and no CSR. The forward orientation of the 2kb repetitive portion has more GG dinucleotides on the non-template strand than the reverse orientation. The correlation of R-loop formation with CSR efficiency, as demonstrated in the 2kb repetitive fragment of the Xenopus switch region, confirms a role played by R-looping in CSR that appears to be conserved through evolution. Copyright © 2015 Elsevier Ltd. All rights reserved.

Relevance of 19th century continuous tone photomechanical printing techniques to digitally generated imagery

Science.gov (United States)

Hoskins, Stephen; Thirkell, Paul

2003-01-01

Collotype and Woodburytype are late 19th early 20th century continuous tone methods of reproducing photography in print, which do not have an underlying dot structure. The aesthetic and tactile qualities produced by these methods at their best, have never been surpassed. Woodburytype is the only photomechanical print process using a printing matrix and ink, that is capable of rendering true continuous tone; it also has the characteristic of rendering a photographic image by mapping a three-dimensional surface topography. Collotype"s absence of an underlying dot structure enables an image to be printed in as many colours as desired without creating any form of interference structure. Research at the Centre for Fine Print Research, UWE Bristol aims to recreate these processes for artists and photographers and assess their potential to create a digitally generated image printed in full colour and continuous tone that will not fade or deteriorate. Through this research the Centre seeks to provide a context in which the development of current four-colour CMYK printing may be viewed as an expedient rather than a logical route for the development of colour printing within the framework of digitally generated hard copy paper output.

Reversible control of kinesin activity and microtubule gliding speeds by switching the doping states of a conducting polymer support

Energy Technology Data Exchange (ETDEWEB)

Martin, Brett D [US Naval Research Laboratory, Code 6930, Washington, DC 20375 (United States); Velea, Luminita M [US Naval Research Laboratory, Code 6930, Washington, DC 20375 (United States); Soto, Carissa M [US Naval Research Laboratory, Code 6930, Washington, DC 20375 (United States); Whitaker, Craig M [US Naval Academy, Department of Chemistry, Annapolis, MD 21402 (United States); Gaber, Bruce P [US Naval Research Laboratory, Code 6930, Washington, DC 20375 (United States); Ratna, Banahalli [US Naval Research Laboratory, Code 6930, Washington, DC 20375 (United States)

2007-02-07

We describe a method for reversibly controlling the ATPase activity of streptavidin-linked kinesin by changing the doping states of a conducting polymer support. When the polymer (poly(CH{sub 2}OH-EDOT)) was electrochemically switched from its dedoped (semiconducting) state to its doped (conducting) state, the ATPase activity of the adsorbed kinesin complex decreased by 35% with a concomitant decrease in the gliding speeds of kinesin-driven microtubules. When the polymer was switched back to its original dedoped state, nearly identical increases were observed in the kinesin ATPase activity and microtubule speeds. Use of a fluorescent ATP substrate analogue showed that the total amount of kinesin adsorbed on the poly(CH{sub 2}OH-EDOT) surface remained constant as the doping state of the polymer was switched. The microtubules exhibited nearly identical speed differences on the doped and dedoped surfaces for both chemical and electrochemical doping methods. Michaelis-Menten modelling suggests that the doped surface acts as an 'uncompetitive inhibitor' of kinesin. This work represents an investigation into the phenomenon of an electrically switchable surface exerting a moderating effect on the activity of an adsorbed protein that does not contain a bound, electroactive metal ion.

Reversal mechanisms and interactions in magnetic systems: coercivity versus switching field and thermally assisted demagnetization

Directory of Open Access Journals (Sweden)

Cebollada, F.

2005-06-01

Full Text Available In this paper we present a comparative analysis of the magnetic interactions and reversal mechanisms of two different systems: NdFeB-type alloys with grain sizes in the single domain range and Fe-SiO2 nanocomposites with Fe concentrations above and below the percolation threshold. We evidence that the use of the coercivity as the main parameter to analyse them might be misleading due to the convolution of both reversible and irreversible magnetization variations. We show that the switching field and thermally assisted demagnetization allow a better understanding of these mechanisms since they involve just irreversible magnetization changes. Specifically, the experimental analysis of the coercivity adquisition process for the NdFeB-type system suggests that the magnetization reversal is nucleated at the spin misalignments present due to intergranular exchange interactions. On the other hand, the study of the magnetic viscosity and of the isothermal remanent magnetization (IRM and direct field demagnetization (DCD remanence curves indicates that the dipolar interactions are responsible for the propagation of the switching started at individual particles.

En este artículo presentamos un análisis comparativo de la influencia de la microestructura a través de las interacciones magnéticas en los mecanismos de inversión de la magnetización en dos sistemas diferentes: aleaciones tipo NdFeB con tamaños de grano en el rango de monodominio y nanocompuestos de Fe-SiO2 con concentraciones de Fe tanto por encima como por debajo del umbral de percolación. Ponemos de manifiesto que el uso del campo coercitivo como parámetro de análisis puede llevar a equívocos debido a la coexistencia de variaciones reversibles e irreversibles de la magnetización. También mostramos que el campo de conmutación y la desimanación térmicamente asistida permiten una mejor comprensión de dichos mecanismos ya que reflejan exclusivamente cambios irreversibles de

Buck Converter with Soft-Switching Cells for PV Panel Applications

Directory of Open Access Journals (Sweden)

Cheng-Tao Tsai

2016-03-01

Full Text Available In power conversion of photovoltaic (PV energy, a hard-switching buck converter always generates some disadvantages. For example, serious electromagnetic interference (EMI, high switching losses, and stresses on an active switch (metal-oxide-semiconductor-field-effect-transistor, MOSFET, and high reverse-recovery losses of a freewheeling diode result in low conversion efficiency. To release these disadvantages, a buck converter with soft-switching cells for PV panel applications is proposed. To create zero-voltage-switching (ZVS features of the active switches, a simple active soft-switching cell with an inductor, a capacitor, and a MOSFET is incorporated into the proposed buck converter. Therefore, the switching losses and stresses of the active switches and EMI can be reduced significantly. To reduce reverse-recovery losses of a freewheeling diode, a simple passive soft-switching cell with a capacitor and two diodes is implemented. To verify the performance and the feasibility of the proposed buck converter with soft-switching cells for PV panel applications, a prototype soft-switching buck converter is built and implemented by using a maximum-power-point-tracking (MPPT method. Simulated and experimental results are presented from a 100 W soft-switching buck converter for PV panel applications.

In situ atomic force microscopy studies of reversible light-induced switching of surface roughness and adhesion in azobenzene-containing PMMA films

International Nuclear Information System (INIS)

Mueller, M.; Gonzalez-Garcia, Y.; Pakula, C.; Zaporojtchenko, V.; Strunskus, T.; Faupel, F.; Herges, R.; Zargarani, D.; Magnussen, O.M.

2011-01-01

Thin films in the range 40-80 nm of a blend of PMMA with an azobenzene derivative have been studied directly during UV and blue light irradiation by atomic force microscopy (AFM), revealing highly reversible changes in the surface roughness and the film adhesion. UV light induces an ∼80% increase in surface roughness, whereas illumination by blue light completely reverses these changes. Based on the observed surface topography and transition kinetics a reversible mass flow mechanisms is suggested, where the polarity changes upon switching trigger a wetting-dewetting transition in a surface segregation layer of the chromophore. Similar AFM measurements of the pull-off force indicate a decrease upon UV and an increase after blue light illumination with a complex kinetic behavior: a rapid initial change, attributed to the change in the cis isomer fraction of the azobenzene derivative, and a more gradual change, indicative of slow structural reorganization.

Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

Science.gov (United States)

Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

2017-12-01

This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

Pseudospark switches

International Nuclear Information System (INIS)

Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

1987-01-01

The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

‘Picking People to Hate’: Reversible reversals in stand-up comedy

DEFF Research Database (Denmark)

Keisalo, Marianna Päivikki

2017-01-01

Generally speaking, ritual reversals mean switching to the opposite of what is considered ‘the normal order’. Such reversals can occur, for example, in terms of social hierarchies in rites of passage, in action in carnival, or in the framing of action as ritual or performance. For comedic figures...... cultural grounds and show how the study of comedic performance can offer insights into the semiotics of performance more broadly....

Contraceptive method switching in the United States.

Science.gov (United States)

Grady, William R; Billy, John O G; Klepinger, Daniel H

2002-01-01

Switching among contraceptive method types is the primary determinant of the prevalence of use of specific contraceptive methods, and it has direct implications for women's ability to avoid unintended pregnancies. Yet, method switching among U.S. women has received little attention from researchers. Data from the 1995 National Survey of Family Growth were used to construct multiple-decrement life tables to explore the gross switching rates of married and unmarried women. Within each group, discrete-time hazard models were estimated to determine how women's characteristics affect their switching behavior. Overall rates of method switching are high among both married and unmarried women (40% and 61%, respectively). Married women's two-year switching rates vary from 30% among women who use the implant, injectable, IUD or other reversible methods to 43% among nonusers, while unmarried women's rates vary from 33% among women who use the implant, injectable or IUD to 70% among nonusers. Multivariate analyses of method switching according to women's characteristics indicate that among married women, women without children are less likely than other women to adopt sterilization or a long-term reversible contraceptive (the implant, injectable or IUD). Older married women have a higher rate than their younger counterparts of switching to sterilization, but are also more likely to continue using no method. Among unmarried women, younger and more highly educated women have high rates of switching to the condom and to dual methods. Women's method switching decisions may be driven primarily by concerns related to level and duration of contraceptive effectiveness, health risks associated with contraceptive use and, among single women, sexually transmitted disease prevention.

Two-magnon bound state causes ultrafast thermally induced magnetisation switching

Science.gov (United States)

Barker, J.; Atxitia, U.; Ostler, T. A.; Hovorka, O.; Chubykalo-Fesenko, O.; Chantrell, R. W.

2013-01-01

There has been much interest recently in the discovery of thermally induced magnetisation switching using femtosecond laser excitation, where a ferrimagnetic system can be switched deterministically without an applied magnetic field. Experimental results suggest that the reversal occurs due to intrinsic material properties, but so far the microscopic mechanism responsible for reversal has not been identified. Using computational and analytic methods we show that the switching is caused by the excitation of two-magnon bound states, the properties of which are dependent on material factors. This discovery allows us to accurately predict the onset of switching and the identification of this mechanism will allow new classes of materials to be identified or designed for memory devices in the THz regime. PMID:24253110

Magnetic elements for switching magnetization magnetic force microscopy tips

International Nuclear Information System (INIS)

Cambel, V.; Elias, P.; Gregusova, D.; Martaus, J.; Fedor, J.; Karapetrov, G.; Novosad, V.

2010-01-01

Using combination of micromagnetic calculations and magnetic force microscopy (MFM) imaging we find optimal parameters for novel magnetic tips suitable for switching magnetization MFM. Switching magnetization MFM is based on two-pass scanning atomic force microscopy with reversed tip magnetization between the scans. Within the technique the sum of the scanned data with reversed tip magnetization depicts local atomic forces, while their difference maps the local magnetic forces. Here we propose the design and calculate the magnetic properties of tips suitable for this scanning probe technique. We find that for best performance the spin-polarized tips must exhibit low magnetic moment, low switching fields, and single-domain state at remanence. The switching field of such tips is calculated and optimum shape of the Permalloy elements for the tips is found. We show excellent correspondence between calculated and experimental results for Py elements.

A modified two-level three-phase quasi-soft-switching inverter

DEFF Research Database (Denmark)

Liu, Yusheng; Wu, Weimin; Blaabjerg, Frede

2014-01-01

A traditional Voltage Source Inverter (VSI) has higher efficiency than a Current Voltage Source (CSI) due to the less conduction power loss. However, the reverse recovery of the free-wheeling diode limits the efficiency improvement for the silicon devices based hard-switching VSI. The traditional...... quasi-soft-switching inverter can alternate between VSI and CSI by using a proper control scheme and thereby reduce the power losses caused by the reverse recovery of the free-wheeling diode. Nevertheless, slightly extra conduction power loss of the auxiliary switch is also introduced. In order...... to reduce the extra conduction power loss and the voltage stress across the DC-link capacitor, a modified two-level three-phase quasi-soft-switching inverter is proposed by using a SiC MOSFET instead of an IGBT. The principle of the modified two-level three-phase quasi-soft-switching inverter is analyzed...

Conduction, reverse conduction and switching characteristics of GaN E-HEMT

DEFF Research Database (Denmark)

Sørensen, Charlie; Lindblad Fogsgaard, Martin; Christiansen, Michael Noe

2015-01-01

In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using...

Negation switching invariant signed graphs

Directory of Open Access Journals (Sweden)

Deepa Sinha

2014-04-01

Full Text Available A signed graph (or, $sigraph$ in short is a graph G in which each edge x carries a value $\\sigma(x \\in \\{-, +\\}$ called its sign. Given a sigraph S, the negation $\\eta(S$ of the sigraph S is a sigraph obtained from S by reversing the sign of every edge of S. Two sigraphs $S_{1}$ and $S_{2}$ on the same underlying graph are switching equivalent if it is possible to assign signs `+' (`plus' or `-' (`minus' to vertices of $S_{1}$ such that by reversing the sign of each of its edges that has received opposite signs at its ends, one obtains $S_{2}$. In this paper, we characterize sigraphs which are negation switching invariant and also see for what sigraphs, S and $\\eta (S$ are signed isomorphic.

A new Zero-Current-Transition PWM switching cell

Energy Technology Data Exchange (ETDEWEB)

Grigore, V. [Electronics and Telecommunications Faculty, `Politechnica` University Bucharest (Romania); Kyyrae, J. [Helsinki University of Technology, Otaniemi (Finland): Institute of Intelligent Power Electronics

1997-12-31

In this paper a new Zero-Current-Transition (ZCT) PWM switching cell is presented. The proposed switching cell is composed of the normal hard-switched PWM cell (consisting of one active switch and one passive switch), plus as auxiliary circuit. The auxiliary circuit is inactive during the ON ad OFF intervals of the switches in the normal PWM switch. The transitions between the two states are controlled by the auxiliary circuit. Prior to turn-off, the current through the active switch in the PWM cell is forced to zero, thus the turn-off losses of the active switch are practically eliminated. At turn-on the auxiliary circuit slows down the growing rate of the current through the main switch. Thus, turn-on losses are also very much reduced. The active switch operates under ZCT conditions, the passive switch (diode) has a controlled reverse recovery, while the switch in the auxiliary circuit operates under Zero-Current-Switching (ZCS) conditions. (orig.) 3 refs.

Micromagnetic simulation of energy consumption and excited eigenmodes in elliptical nanomagnetic switches

International Nuclear Information System (INIS)

Carlotti, G.; Madami, M.; Gubbiotti, G.; Tacchi, S.

2014-01-01

Sub-200 nm patterned magnetic dots are key elements for the design of magnetic switches, memory cells or elementary units of nanomagnetic logic circuits. In this paper, we analyse by micromagnetic simulations the magnetization reversal, the dissipated energy and the excited spin eigenmodes in bistable magnetic switches, consisting of elliptical nanodots with 100×60 nm lateral dimensions. Two different strategies for reversal are considered and the relative results compared: (i) the irreversible switching obtained by the application of an external field along the easy axis, in the direction opposite to the initial magnetization; (ii) the precessional switching accomplished by the application of a short magnetic field pulse, oriented perpendicular to the initial magnetization direction. The obtained results are discussed in terms of deviation from the macrospin behavior, energy dissipation and characteristics of the spectrum of spin eigenmodes excited during the magnetization reversal process

Reversal of Flux Closure States in Cobalt Nanoparticle Rings With Coaxial Magnetic Pulses

DEFF Research Database (Denmark)

Kasama, T; Dunin-Borkowski, Rafal E.; Scheinfein, MR

2008-01-01

Bistable flux closure (FC) states in Co nanoparticle rings can be switched reversibly by applying a coaxial magnetic field (H-z). The FC switching phenomena can be reproduced by micromagnetics simulations, which also reveal novel magnetic states at intermediate applied field strengths.......Bistable flux closure (FC) states in Co nanoparticle rings can be switched reversibly by applying a coaxial magnetic field (H-z). The FC switching phenomena can be reproduced by micromagnetics simulations, which also reveal novel magnetic states at intermediate applied field strengths....

A numerical simulation model of valence-change-based resistive switching

OpenAIRE

Marchewka, Astrid

2017-01-01

Due to their superior scalability and performance, nanoscale resistive switches based on the valence-change mechanism are considered promising candidates for future nonvolatile memory and logic applications. These devices are metal-oxide-metal structures that can be reversibly switched between different resistance states by electrical signals. Typically, they contain one Schottky-like and one ohmic-like metal-oxide contact and exhibit bipolar switching. The switching mechanism and the initial...

Impact of switching antiretroviral therapy on lipodystrophy and other metabolic complications: a review

DEFF Research Database (Denmark)

Hansen, Birgitte R; Haugaard, Steen B; Iversen, Johan

2004-01-01

with the disfiguring body-alterations known as HALS. More recently, however, regimens containing nucleoside reverse-transcriptase inhibitors (NRTI) have attracted attention. Reviewing switch studies regarding metabolic parameters and body shape changes, certain trends emerge. Switching from PI, the metabolic...... complications such as dyslipidaemia and insulin resistance seem to be partly reversible, whereas the morphologic alterations appear to be unchanged. In studies in which NRTI's are switched, dyslipidaemia appears unaffected, but a modest improvement in peripheral lipoatrophy has been reported. However...

A new Zero-Voltage-Transition PWM switching cell

Energy Technology Data Exchange (ETDEWEB)

Grigore, V. [Electronics and Telecommunications Faculty `Politebuica` University Bucharest (Romania); Kyyrae, J. [Helsinki University of Technology, Otaniemi (Finland): Institute of Intelligent Power Electronics

1997-12-31

In this paper a new Zero-Voltage-Transition (ZVT) PWM switching cell is presented. The proposed switching cell is composed of the normal hard-switched PWM cell (consisting of one active switch and one passive switch), plus an auxiliary circuit (consisting of one active switch and some reactive components). The auxiliary circuit is inactive during the ON and OFF intervals of the switches in the normal PWM switch. However, the transitions between the two states are controlled by the auxiliary circuit. Prior to turn-on, the voltage across the active switch in the PWM cell is forced to zero, thus the turn-on losses of the active switch are practically eliminated. At turn-off the auxiliary circuit behaves like a non-dissipative passive snubber reducing the turn-off losses to a great extent. Zero-Voltage-Transition switching technique almost eliminates switching losses. The active switch operates under ZVT conditions, the passive switch (diode) has a controlled reverse recovery, and the switch in the auxiliary circuit operates under Zero-Current-Switching (ZCS) conditions. (orig.) 6 refs.

Effect of resistance feedback on spin torque-induced switching of nanomagnets

International Nuclear Information System (INIS)

Garzon, Samir; Webb, Richard A.; Covington, Mark; Kaka, Shehzaad; Crawford, Thomas M.

2009-01-01

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.

Two-photon fluorescent polysiloxane-based films with thermally responsive self switching properties achieved by a unique reversible spirocyclization mechanism.

Science.gov (United States)

Zuo, Yujing; Yang, Tingxin; Zhang, Yu; Gou, Zhiming; Tian, Minggang; Kong, Xiuqi; Lin, Weiying

2018-03-14

Responsiveness and reversibility are present in nature, and are ubiquitous in biological systems. The realization of reversibility and responsiveness is of great importance in the development of properties and the design of new materials. However, two-photon fluorescent thermal-responsive materials have not been reported to date. Herein, we engineered thermally responsive polysiloxane materials ( Dns-non ) that exhibited unique two-photon luminescence, and this is the first report about thermally responsive luminescent materials with two-photon fluorescence. The fluorescence of Dns-non could switch from the "on" to "off" state through a facile heating and cooling process, which could be observed by the naked eye. Monitoring the temperature of the CPU in situ was achieved by easily coating D1-non onto the CPU surface, which verified the potential application in devices of Dns-non . A unique alkaline tuned reversible transition mechanism of rhodamine-B from its spirocyclic to its ring-open state was proposed. Furthermore, Dns-non appeared to be a useful cell adhesive for the culture of cells on the surface. We believe that the constructed thermally responsive silicon films which have promising utilization as a new type of functional fluorescent material, may show broad applications in materials chemistry or bioscience.

DSP-Based Focusing over Optical Fiber Using Time Reversal

DEFF Research Database (Denmark)

Piels, Molly; Porto da Silva, Edson; Estaran Tolosa, Jose Manuel

2014-01-01

A time-reversal array in multimode fiber is proposed for lossless switching using passive optical splitters. Numerical investigations are performed, and a two-transmitter array that routes a 3GBd QPSK signal through the physical layer is demonstrated experimentally.......A time-reversal array in multimode fiber is proposed for lossless switching using passive optical splitters. Numerical investigations are performed, and a two-transmitter array that routes a 3GBd QPSK signal through the physical layer is demonstrated experimentally....

Mathematical modeling of a passively Q-switched diode laser

International Nuclear Information System (INIS)

Abdul Ghani, B.; Hammadi, M.

2009-11-01

A mathematical model describing the dynamic emission of the intracavity frequency doubling (IFD) of a gain-switched InGaAs/GaAs/KTP and a gain-switched mode-locked two-sections tapered ridge-waveguide InGaAs/GaAs diode laser has been presented. The IFD of a gain-switched and a gain-switched mode-locked two-sections diode laser is modeled where one section is electrically pumped to proved gain while the second section is unpumped (reverse biased) to provide a saturable absorber. (author)

Experimental study on the characteristics of semiconductor opening switch

CERN Document Server

Su Jian Cang; Ding Yong Zhong; Song Zhi Min; Ding Zhen Jie; Liu Guo Zhi

2002-01-01

An experimental set-up is developed to measure the characteristics of semiconductor opening switch (SOS). The parameters, such as interruption impedance, current int eruption time, voltage gain, pulse duration and energy transfer efficiency, are studied experimentally. The experimental results show that forward pumping time and reverse pumping time are important parameters for semiconductor opening switches. The influences of forward pumping time and reverse pumping time on interruption time, voltage gain, and energy transfer efficiency are obtained. In the interruption process, the impedance variation is divided into three phases: that is rapid increasing phase, slow change phase and completely interruption phase

Second-chance signal transduction explains cooperative flagellar switching.

Science.gov (United States)

Zot, Henry G; Hasbun, Javier E; Minh, Nguyen Van

2012-01-01

The reversal of flagellar motion (switching) results from the interaction between a switch complex of the flagellar rotor and a torque-generating stationary unit, or stator (motor unit). To explain the steeply cooperative ligand-induced switching, present models propose allosteric interactions between subunits of the rotor, but do not address the possibility of a reaction that stimulates a bidirectional motor unit to reverse direction of torque. During flagellar motion, the binding of a ligand-bound switch complex at the dwell site could excite a motor unit. The probability that another switch complex of the rotor, moving according to steady-state rotation, will reach the same dwell site before that motor unit returns to ground state will be determined by the independent decay rate of the excited-state motor unit. Here, we derive an analytical expression for the energy coupling between a switch complex and a motor unit of the stator complex of a flagellum, and demonstrate that this model accounts for the cooperative switching response without the need for allosteric interactions. The analytical result can be reproduced by simulation when (1) the motion of the rotor delivers a subsequent ligand-bound switch to the excited motor unit, thereby providing the excited motor unit with a second chance to remain excited, and (2) the outputs from multiple independent motor units are constrained to a single all-or-none event. In this proposed model, a motor unit and switch complex represent the components of a mathematically defined signal transduction mechanism in which energy coupling is driven by steady-state and is regulated by stochastic ligand binding. Mathematical derivation of the model shows the analytical function to be a general form of the Hill equation (Hill AV (1910) The possible effects of the aggregation of the molecules of haemoglobin on its dissociation curves. J Physiol 40: iv-vii).

EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

Science.gov (United States)

Weinelt, Martin; von Oppen, Felix

2012-10-01

electron-vibration coupling in transport through single moleculesKatharina J Franke and Jose Ignacio Pascual Vibrational heating in single-molecule switches: an energy-dependent density-of-states approachT Brumme, R Gutierrez and G Cuniberti Reversible switching of single tin phthalocyanine molecules on the InAs(111)A surfaceC Nacci, K Kanisawa and S Fölsch Tuning the interaction between carbon nanotubes and dipole switches: the influence of the change of the nanotube-spiropyran distanceP Bluemmel, A Setaro, C Maity, S Hecht and S Reich Carbon nanotubes as substrates for molecular spiropyran-based switchesE Malic, A Setaro, P Bluemmel, Carlos F Sanz-Navarro, Pablo Ordejón, S Reich and A Knorr Ultrafast dynamics of dithienylethenes differently linked to the surface of TiO2 nanoparticlesLars Dworak, Marc Zastrow, Gehad Zeyat, Karola Rück-Braun and Josef Wachtveitl Switching the electronic properties of Co-octaethylporphyrin molecules on oxygen-covered Ni films by NO adsorptionC F Hermanns, M Bernien, A Krüger, J Miguel and W Kuch STM-switching of organic molecules on semiconductor surfaces: an above threshold density matrix model for 1,5 cyclooctadiene on Si(100)K Zenichowski, Ch Nacci, S Fölsch, J Dokić, T Klamroth and P Saalfrank A switch based on self-assembled thymineFatih Kalkan, Michael Mehlhorn and Karina Morgenstern The growth and electronic structure of azobenzene-based functional molecules on layered crystalsJ Iwicki, E Ludwig, J Buck, M Kalläne, F Köhler, R Herges, L Kipp and K Rossnagel Voltage-dependent conductance states of a single-molecule junctionY F Wang, N Néel, J Kröger, H Vázquez, M Brandbyge, B Wang and R Berndt Molecules with multiple switching units on a Au(111) surface: self-organization and single-molecule manipulationJohannes Mielke, Sofia Selvanathan, Maike Peters, Jutta Schwarz, Stefan Hecht and Leonhard Grill Preparing and regulating a bi-stable molecular switch by atomic manipulationS Sakulsermsuk, R E Palmer and P A Sloan Mixed self

Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode

Science.gov (United States)

Miranda, Felix A.; Meador, Michael A.; Theofylaktos, Onoufrios; Pinto, Nicholas J.; Mueller, Carl H.; Santos-Perez, Javier

2010-01-01

This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.

Photo-induced cooperative covalent-bond switching in amorphous arsenic selenide

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-290031 (Ukraine); Balitska, V [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-290031 (Ukraine); Filipecki, J [Institute of Physics of Jan Dlugosz University, 13/15, Al. Armii Krajowej, Czestochowa, PL-42201 (Poland)

2005-01-01

A microstructural mechanism of photoinduced transformations in amorphous arsenic selenide films was studied with IR Fourier-spectroscopy technique in 300-100 cm{sup -1} region. It was shown that stage of irreversible photostructural changes was connected with cooperative process of coordination defect formation accompanied by homopolar chemical bonds switching in heteropolar ones. On the contrary, reversible photoinduced effects were caused by heteropolar chemical bonds switching in homopolar ones, as well as additional channel of bridge heteropolar bonds switching in short-layer ones. The both processes were associated with formation of anomalously coordinated defect pairs and accompanying atomic displacements at the level of medium-range ordering. The developed mathematical simulation procedure testified in a favour of defect-related origin of the reversible photo-thermallyinduced transformations, since their kinetics corresponded to known stretched-exponential dependence, tending to bimolecular behaviour rather then to single-exponential one.

Neural correlates of a reversal learning task with an affectively neutral baseline: an event-related fMRI study

NARCIS (Netherlands)

Remijnse, Peter L.; Nielen, Marjan M. A.; Uylings, Harry B. M.; Veltman, Dick J.

2005-01-01

Reversal learning may conceptually be dissected into acquiring stimulus-reinforcement associations and subsequently altering behavior by switching to new associations as stimulus-reinforcement contingencies reverse (i.e., affective switching). Previous imaging studies have found regions of the

Cooperative light-induced molecular movements of highly ordered azobenzene self-assembled monolayers.

Science.gov (United States)

Pace, Giuseppina; Ferri, Violetta; Grave, Christian; Elbing, Mark; von Hänisch, Carsten; Zharnikov, Michael; Mayor, Marcel; Rampi, Maria Anita; Samorì, Paolo

2007-06-12

Photochromic systems can convert light energy into mechanical energy, thus they can be used as building blocks for the fabrication of prototypes of molecular devices that are based on the photomechanical effect. Hitherto a controlled photochromic switch on surfaces has been achieved either on isolated chromophores or within assemblies of randomly arranged molecules. Here we show by scanning tunneling microscopy imaging the photochemical switching of a new terminally thiolated azobiphenyl rigid rod molecule. Interestingly, the switching of entire molecular 2D crystalline domains is observed, which is ruled by the interactions between nearest neighbors. This observation of azobenzene-based systems displaying collective switching might be of interest for applications in high-density data storage.

A nanoplasmonic switch based on molecular machines

KAUST Repository

Zheng, Yue Bing

2009-06-01

We aim to develop a molecular-machine-driven nanoplasmonic switch for its use in future nanophotonic integrated circuits (ICs) that have applications in optical communication, information processing, biological and chemical sensing. Experimental data show that an Au nanodisk array, coated with rotaxane molecular machines, switches its localized surface plasmon resonances (LSPR) reversibly when it is exposed to chemical oxidants and reductants. Conversely, bare Au nanodisks and disks coated with mechanically inert control compounds, do not display the same switching behavior. Along with calculations based on time-dependent density functional theory (TDDFT), these observations suggest that the nanoscale movements within surface-bound "molecular machines" can be used as the active components in plasmonic devices. ©2009 IEEE.

Thickness dependence of magnetization reversal mechanism in perpendicularly magnetized L1{sub 0} FePt films

Energy Technology Data Exchange (ETDEWEB)

Bi, Mei; Wang, Xin, E-mail: xinwang@uestc.edu.cn; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Xie, Jianliang

2017-04-15

We have studied the magnetic switching behavior of L1{sub 0}-ordered FePt films with varying thickness. It was found that coercivity is strongly dependent on the film thickness. The obvious variations of the coercivity in the thin films are confirmed by the measurements of structural and magnetic properties. With increasing thickness, the degree of L1{sub 0} chemical ordering increased, while the magnetization reversal process transforms from a pinned two-steps magnetization reversal to a comparatively smooth domain wall motion behavior. Although considering anisotropy, exchange interaction and applied magnetic field, the switching behavior in films is quite complex, the main features of the magnetization reversal mechanism can be understood by performing detailed investigation on the effect of the deposition temperature and the angle of magnetic field. - Highlights: • Series of FePt films with L1{sub 0} phase have been prepared. • We focused on the magnetization reversal mechanism with varying thicknesses. • The angle-dependence of switching process is revealed in the FePt films. • Different switching mechanisms were found by increasing the film thickness.

The Orange Side of Disperse Red 1: Humidity-Driven Color Switching in Supramolecular Azo-Polymer Materials Based on Reversible Dye Aggregation.

Science.gov (United States)

Schoelch, Simon; Vapaavuori, Jaana; Rollet, Frédéric-Guillaume; Barrett, Christopher J

2017-01-01

Humidity detection, and the quest for low-cost facile humidity-sensitive indicator materials is of great interest for many fields, including semi-conductor processing, food transport and storage, and pharmaceuticals. Ideal humidity-detection materials for a these applications might be based on simple clear optical readout with no power supply, i.e.: a clear color change observed by the naked eye of any untrained observer, since it doesn't require any extra instrumentation or interpretation. Here, the introduction of a synthesis-free one-step procedure, based on physical mixing of easily available commercial materials, for producing a humidity memory material which can be easily painted onto a wide variety of surfaces and undergoes a remarkable color change (approximately 100 nm blue-shift of λ MAX ) upon exposure to various thresholds of levels of ambient humidity is reported. This strong color change, easily visible to as a red-to-orange color switch, is locked in until inspection, but can then be restored reversibly if desired, after moderate heating. By taking advantage of spontaneously-forming reversible 'soft' supramolecular bonds between a red-colored azo dye and a host polymer matrix, a reversible dye 'migration' aggregation appearing orange, and dis-aggregation back to red can be achieved, to function as the sensor. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Constraining the reversing and non-reversing modes of the geodynamo. New insights from magnetostratigraphy.

Science.gov (United States)

Gallet, Y.; Pavlov, V.; Shatsillo, A.; Hulot, G.

2015-12-01

Constraining the evolution in the geomagnetic reversal frequency over hundreds of million years is not a trivial matter. Beyond the fact that there are long periods without reversals, known as superchrons, and periods with many reversals, the way the reversal frequency changes through time during reversing periods is still debated. A smooth evolution or a succession of stationary segments have both been suggested to account for the geomagnetic polarity time scale since the Middle-Late Jurassic. Sudden changes from a reversing mode to a non-reversing mode of the geodynamo may also well have happened, the switch between the two modes having then possibly been controlled by the thermal conditions at the core-mantle boundary. There is, nevertheless, a growing set of magnetostratigraphic data, which could help decipher a proper interpretation of the reversal history, in particular in the early Paleozoic and even during the Precambrian. Although yielding a fragmentary record, these data reveal the occurrence of both additional superchrons and periods characterized by extremely high, not to say extraordinary, magnetic reversal frequencies. In this talk, we will present a synthesis of these data, mainly obtained from Siberia, and discuss their implication for the magnetic reversal behavior over the past billion years.

Regime switches in the risk-return trade-off

OpenAIRE

Marcellino, Massimiliano; Ghysels, Eric; Guerin, Pierre

2014-01-01

This paper deals with the estimation of the risk-return trade-off. We use a MIDAS model for the conditional variance and allow for possible switches in the risk-return relation through a Markov-switching specification. We find strong evidence for regime changes in the risk-return relation. This finding is robust to a large range of specifications. In the first regime characterized by low ex-post returns and high volatility, the risk-return relation is reversed, whereas the intuitive positive ...

Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

Pramanik, Tanmoy, E-mail: pramanik.tanmoy@utexas.edu; Roy, Anupam, E-mail: anupam@austin.utexas.edu; Dey, Rik, E-mail: rikdey@utexas.edu; Rai, Amritesh; Guchhait, Samaresh; Movva, Hema C.P.; Hsieh, Cheng-Chih; Banerjee, Sanjay K.

2017-09-01

Highlights: • Perpendicular magnetic anisotropy in epitaxial Cr{sub 2}Te{sub 3} has been investigated. • Presence of a relatively strong second order anisotropy contribution is observed. • Magnetization reversal is explained quantitatively using a 1D defect model. • Relative roles of nucleation and pinning in magnetization reversal are discussed. • Domain structures and switching process are visualized by micromagnetic simulation. - Abstract: We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

Photoinduced reversible switching of charge carrier mobility in conjugated polymers

Czech Academy of Sciences Publication Activity Database

Weiter, M.; Navrátil, J.; Vala, M.; Toman, Petr

2009-01-01

Roč. 48, č. 1 (2009), 10401_1-10401_6 ISSN 1286-0042 R&D Projects: GA ČR GA203/06/0285; GA AV ČR KAN401770651 Institutional research plan: CEZ:AV0Z40500505 Keywords : polymers * switch * charge carrier mobility Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.756, year: 2009

Switched-mode converters (one quadrant)

CERN Document Server

Barrade, P

2006-01-01

Switched-mode converters are DC/DC converters that supply DC loads with a regulated output voltage, and protection against overcurrents and short circuits. These converters are generally fed from an AC network via a transformer and a conventional diode rectifier. Switched-mode converters (one quadrant) are non-reversible converters that allow the feeding of a DC load with unipolar voltage and current. The switched-mode converters presented in this contribution are classified into two families. The first is dedicated to the basic topologies of DC/DC converters, generally used for low- to mid-power applications. As such structures enable only hard commutation processes, the main drawback of such topologies is high commutation losses. A typical multichannel evolution is presented that allows an interesting decrease in these losses. Deduced from this direct DC/DC converter, an evolution is also presented that allows the integration of a transformer into the buck and the buck–boost structure. This enables an int...

The efficacy, pharmacokinetics, safety and cardiovascular risks of switching nevirapine to rilpivirine in HIV-1 patients: the RPV switch study

NARCIS (Netherlands)

Rokx, C.; Blonk, M.; Verbon, A.; Burger, D.M.; Rijnders, B.J.

2014-01-01

INTRODUCTION: Nevirapine (NVP) induces cytochrome P450 3A4 by which rilpivirine (RPV) is metabolized. Switching NVP to RPV could result in decreased RPV exposure with subsequent virological failure and dyslipidemia because NVP is regarded as the least dyslipidemic, non-nucleoside, reverse

Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials.

Science.gov (United States)

Zalden, Peter; Shu, Michael J; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W; Wong, H-S Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M

2016-08-05

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag_{4}In_{3}Sb_{67}Te_{26}. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales-faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

Light-Triggered Control of Plasmonic Refraction and Group Delay by Photochromic Molecular Switches

DEFF Research Database (Denmark)

Großmann, Malte; Klick, Alwin; Lemke, Christoph

2015-01-01

An interface supporting plasmonic switching is prepared from a gold substrate coated with a polymerfilm doped with photochromic molecular switches. A reversible light-induced change in the surface plasmon polariton dispersion curve of the interface is experimentally demonstrated, evidencing...... complex functionalities based on surface plasmon refraction and group delay....

Isomerization of Orthogonal Molecular Switches Encapsulated within Micelles Solubilizing Carbon Nanotubes

DEFF Research Database (Denmark)

Kreft, Stefanie K.; Petersen, Michael Åxman; Nielsen, Mogens Brøndsted

2015-01-01

We study the effects of the proximity of the orthogonal dipole-switching moiety dihydroazulene/vinylheptafulvene (DHA/VHF) to carbon nanotubes (CNTs). The switches are introduced into a micelle surrounding the CNTs, thereby achieving very close proximity between the molecules and the CNTs...... of the CNTs and the resulting reversible redshift of the nanotubes' emission by the change of the molecules' conformation....

Resistance switching in silver - manganite contacts

International Nuclear Information System (INIS)

Gomez-Marlasca, F; Levy, P

2009-01-01

We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

Resistance switching in silver - manganite contacts

Energy Technology Data Exchange (ETDEWEB)

Gomez-Marlasca, F [Materia Condensada GIA GAIANN CAC -CNEA, and Instituto de Nanociencia y Nanotecnologia, CNEA, Gral Paz 1499 (1650) San Martin, Pcia. Buenos Aires (Argentina); Levy, P, E-mail: levy@cnea.gov.a

2009-05-01

We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

Non-stochastic switching and emergence of magnetic vortices in artificial quasicrystal spin ice

Energy Technology Data Exchange (ETDEWEB)

Bhat, V.S., E-mail: vinayak.bhat@uky.edu [Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055 (United States); Farmer, B.; Smith, N.; Teipel, E.; Woods, J. [Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055 (United States); Sklenar, J.; Ketterson, J.B. [Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208-3112 (United States); Hastings, J.T. [Department of Electrical and Computer Engineering, University of Kentucky, Lexington, KY 40506-0055 (United States); De Long, L.E. [Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055 (United States)

2014-08-15

Highlights: • We studied magnetic reversal in a fivefold rotational symmetric artificial quasicrystal spin ice. • Our experiments and simulations suggest the presence of non-stochastic switching in the quasicrystal. • Simulations reveal a strong connection between FM reversal and formation of vortex loops in the quasicrystal. • Our study shows that the magnetic reversal in the artificial quasicrystal is a collective phenomenon. - Abstract: Previous studies of artificial spin ice have been largely restricted to periodic dot lattices. Ferromagnetic switching of segments in an applied magnetic field is stochastic in periodic spin ice systems, which makes emergent phenomena, such as the formation of vortex loops, hard to control or predict. We fabricated finite, aperiodic Penrose P2 tilings as antidot lattices with fivefold rotational symmetry in permalloy thin films. Measurements of the field dependence of the static magnetization reveal reproducible knee anomalies whose number and form are temperature dependent, which suggests they mark cooperative rearrangements of the tiling magnetic texture. Our micromagnetic simulations of the P2 tiling are in good agreement with experimental magnetization data and exhibit non-stochastic magnetic switching of segments in applied field, and vortex loops that are stable over an extended field interval during magnetic reversal.

Current-driven thermo-magnetic switching in magnetic tunnel junctions

Science.gov (United States)

Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.

2017-12-01

We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.

Shape-Memory Hydrogels: Evolution of Structural Principles To Enable Shape Switching of Hydrophilic Polymer Networks.

Science.gov (United States)

Löwenberg, Candy; Balk, Maria; Wischke, Christian; Behl, Marc; Lendlein, Andreas

2017-04-18

The ability of hydrophilic chain segments in polymer networks to strongly interact with water allows the volumetric expansion of the material and formation of a hydrogel. When polymer chain segments undergo reversible hydration depending on environmental conditions, smart hydrogels can be realized, which are able to shrink/swell and thus alter their volume on demand. In contrast, implementing the capacity of hydrogels to switch their shape rather than volume demands more sophisticated chemical approaches and structural concepts. In this Account, the principles of hydrogel network design, incorporation of molecular switches, and hydrogel microstructures are summarized that enable a spatially directed actuation of hydrogels by a shape-memory effect (SME) without major volume alteration. The SME involves an elastic deformation (programming) of samples, which are temporarily fixed by reversible covalent or physical cross-links resulting in a temporary shape. The material can reverse to the original shape when these molecular switches are affected by application of a suitable stimulus. Hydrophobic shape-memory polymers (SMPs), which are established with complex functions including multiple or reversible shape-switching, may provide inspiration for the molecular architecture of shape-memory hydrogels (SMHs), but cannot be identically copied in the world of hydrophilic soft materials. For instance, fixation of the temporary shape requires cross-links to be formed also in an aqueous environment, which may not be realized, for example, by crystalline domains from the hydrophilic main chains as these may dissolve in presence of water. Accordingly, dual-shape hydrogels have evolved, where, for example, hydrophobic crystallizable side chains have been linked into hydrophilic polymer networks to act as temperature-sensitive temporary cross-links. By incorporating a second type of such side chains, triple-shape hydrogels can be realized. Considering the typically given light

Study of switching behavior of exchange-coupled nanomagnets by transverse magnetization metrology

Science.gov (United States)

Dey, Himadri S.; Csaba, Gyorgy; Bernstein, Gary H.; Porod, Wolfgang

2017-05-01

We investigate the static switching modes of nanomagnets patterned from antiferromagnetically exchange-coupled magnetic multilayers, and compare them to nanomagnets having only dipole coupling between the ferromagnetic layers. Vibrating sample magnetometry experiments, supported by micromagnetic simulations, reveal two distinct switching mechanisms between the exchange-coupled and only dipole-coupled nanomagnets. The exchange-coupled nanomagnets exhibit gradual switching of the layers, dictated by the strong antiferromagnetic exchange coupling present between the layers. However, the layers of the only dipole-coupled nanomagnets show abrupt nucleation/growth type switching. A comprehensive understanding of the switching modes of such layered and patterned systems can add new insight into the reversal mechanisms of similar systems employed for spintronic and magneto-logic device applications.

Risperidone-induced reversible neutropenia.

Science.gov (United States)

Kattalai Kailasam, Vasanth; Chima, Victoria; Nnamdi, Uchechukwu; Sharma, Kavita; Shah, Kairav

2017-01-01

This case report presents a 44-year-old man with a history of schizophrenia who developed neutropenia on risperidone therapy. The patient's laboratory reports showed a gradual decline of leukocytes and neutrophils after resolution and rechallenging. This was reversed with the discontinuation of risperidone and by switching to olanzapine. In this case report, we also discuss the updated evidence base for management of risperidone-induced neutropenia.

Reversible chemical patterning on stimuli-responsive polymer film: Environment-responsive lithography

International Nuclear Information System (INIS)

Ionov, Leonid; Minko, Sergiy; Stamm, Manfred; Gohy, Jean-Francois; Jerome, Robert; Scholl, Andreas

2003-01-01

We report on a novel type of chemical patterning based on thin stimuli-responsive polymer films. The basic concept is the permanent storage (writing) of a pattern, which is reversibly developed and erased upon exposure to appropriate environment, e.g., solvent, pH, and temperature. The smart surface is fabricated from the mixed brush of poly(2-vinylpyridine) and polyisoprene. The mixed brush demonstrates switching behavior upon exposure to different solvents. Cross-linking of polyisoprene via illumination through a photomask results in formation of patterns with suppressed switching. Due to the contrast in switching between illuminated and dark areas, exposure of the smart surface to different solvents causes either reversible formation or erasing of chemical contrast between the illuminated and dark areas. Thus, the pattern surface can very locally attract colloidal particles or can be wetted by water only upon exposure to the special solvent which introduces the contrast between the illuminated and dark areas. Appearance of the patterns indicates particular environment and can be used for local switching of adsorption

Ferroelectric domain switching dynamics and memristive behaviors in BiFeO3-based magnetoelectric heterojunctions

Science.gov (United States)

Huang, Weichuan; Liu, Yukuai; Luo, Zhen; Hou, Chuangming; Zhao, Wenbo; Yin, Yuewei; Li, Xiaoguang

2018-06-01

The ferroelectric domain reversal dynamics and the corresponding resistance switching as well as the memristive behaviors in epitaxial BiFeO3 (BFO, ~150 nm) based multiferroic heterojunctions were systematically investigated. The ferroelectric domain reversal dynamics could be described by the nucleation-limited-switching model with the Lorentzian distribution of logarithmic domain-switching times. By engineering the domain states, multi and even continuously tunable resistances states, i.e. memristive states, could be non-volatilely achieved. The resistance switching speed can be as fast as 30 ns in the BFO-based multiferroic heterojunctions with a write voltage of ~20 V. By reducing the thickness of BFO, the La0.6Sr0.4MnO3/BFO (~5 nm)/La0.6Sr0.4MnO3 multiferroic tunnel junction (MFTJ) shows an even a quicker switching speed (20 ns) with a much lower operation voltage (~4 V). Importantly, the MFTJ exhibits a tunable interfacial magnetoelectric coupling related to the ferroelectric domain switching dynamics. These findings enrich the potential applications of multiferroic BFO based devices in high-speed, low-power, and high-density memories as well as future neuromorphic computational architectures.

Reversible electrical resistance switching in GeSbTe thin films : An electrolytic approach without amorphous-crystalline phase-change

NARCIS (Netherlands)

Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George; De Hosson, Jeff Th. M.; Wouters, DJ; Hong, S; Soss, S; Auciello, O

2008-01-01

Besides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named 'polarity-dependent resistance (PDR) switching'. 'Me electrical resistance of the film switches between a low- and high-state

Electric-Field-Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure

Science.gov (United States)

Heron, J. T.; Trassin, M.; Ashraf, K.; Gajek, M.; He, Q.; Yang, S. Y.; Nikonov, D. E.; Chu, Y.-H.; Salahuddin, S.; Ramesh, R.

2011-11-01

A reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic switching methods. Here we show a nonvolatile, room temperature magnetization reversal determined by an electric field in a ferromagnet-multiferroic system. The effect is reversible and mediated by an interfacial magnetic coupling dictated by the multiferroic. Such electric-field control of a magnetoelectric device demonstrates an avenue for next-generation, low-energy consumption spintronics.

Active Molecular Plasmonics: Controlling Plasmon Resonances with Molecular Switches

KAUST Repository

Zheng, Yue Bing

2009-02-11

A gold nanodisk array, coated with bistable, redox-controllable [2]rotaxane molecules, when exposed to chemical oxidants and reductants, undergoes switching of its plasmonic properties reversibly. By contrast, (i) bare gold nanodisks and (ii) disks coated with a redox-active, but mechanically inert, control compound do not display surface-plasmon-based switching. Along with calculations based on time-dependent density functional theory, these experimental observations suggest that the nanoscale movements within surface-bound “molecular machines” can be used as the active components in plasmonic devices.

Active Molecular Plasmonics: Controlling Plasmon Resonances with Molecular Switches

KAUST Repository

Zheng, Yue Bing; Yang, Ying-Wei; Jensen, Lasse; Fang, Lei; Juluri, Bala Krishna; Flood, Amar H.; Weiss, Paul S.; Stoddart, J. Fraser; Huang, Tony Jun

2009-01-01

A gold nanodisk array, coated with bistable, redox-controllable [2]rotaxane molecules, when exposed to chemical oxidants and reductants, undergoes switching of its plasmonic properties reversibly. By contrast, (i) bare gold nanodisks and (ii) disks coated with a redox-active, but mechanically inert, control compound do not display surface-plasmon-based switching. Along with calculations based on time-dependent density functional theory, these experimental observations suggest that the nanoscale movements within surface-bound “molecular machines” can be used as the active components in plasmonic devices.

The importance of the rotor in hydrazone-based molecular switches

Directory of Open Access Journals (Sweden)

Xin Su

2012-06-01

Full Text Available The pH-activated E/Z isomerization of a series of hydrazone-based systems having different functional groups as part of the rotor (R = COMe, CN, Me, H, was studied. The switching efficiency of these systems was compared to that of a hydrazone-based molecular switch (R = COOEt whose E/Z isomerization is fully reversible. It was found that the nature of the R group is critical for efficient switching to occur; the R group should be a moderate H-bond acceptor in order to (i provide enough driving force for the rotor to move upon protonation, and (ii stabilize the obtained Z configuration, to achieve full conversion.

Three-terminal resistive switching memory in a transparent vertical-configuration device

International Nuclear Information System (INIS)

Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

2014-01-01

The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies

Parameter dependence of resonant spin torque magnetization reversal

International Nuclear Information System (INIS)

Fricke, L.; Serrano-Guisan, S.; Schumacher, H.W.

2012-01-01

We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunneling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modeled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However, for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.

Parameter dependence of resonant spin torque magnetization reversal

Science.gov (United States)

Fricke, L.; Serrano-Guisan, S.; Schumacher, H. W.

2012-04-01

We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunneling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modeled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However, for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.

Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

Science.gov (United States)

Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

2015-01-01

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

The Post-mating Switch in the Pheromone Response of Nasonia Females Is Mediated by Dopamine and Can Be Reversed by Appetitive Learning

Directory of Open Access Journals (Sweden)

Maria Lenschow

2018-01-01

Full Text Available The olfactory sense is of crucial importance for animals, but their response to chemical stimuli is plastic and depends on their physiological state and prior experience. In many insect species, mating status influences the response to sex pheromones, but the underlying neuromodulatory mechanisms are poorly understood. After mating, females of the parasitic wasp Nasonia vitripennis are no longer attracted to the male sex pheromone. Here we show that this post-mating behavioral switch is mediated by dopamine (DA. Females fed a DA-receptor antagonist prior to mating maintained their attraction to the male pheromone after mating while virgin females injected with DA became unresponsive. However, the switch is reversible as mated females regained their pheromone preference after appetitive learning. Feeding mated N. vitripennis females with antagonists of either octopamine- (OA or DA-receptors prevented relearning of the pheromone preference suggesting that both receptors are involved in appetitive learning. Moreover, DA injection into mated females was sufficient to mimic the oviposition reward during odor conditioning with the male pheromone. Our data indicate that DA plays a key role in the plastic pheromone response of N. vitripennis females and reveal some striking parallels between insects and mammals in the neuromodulatory mechanisms underlying olfactory plasticity.

Copper oxide resistive switching memory for e-textile

Directory of Open Access Journals (Sweden)

Jin-Woo Han

2011-09-01

Full Text Available A resistive switching memory suitable for integration into textiles is demonstrated on a copper wire network. Starting from copper wires, a Cu/CuxO/Pt sandwich structure is fabricated. The active oxide film is produced by simple thermal oxidation of Cu in atmospheric ambient. The devices display a resistance switching ratio of 102 between the high and low resistance states. The memory states are reversible and retained over 107 seconds, with the states remaining nondestructive after multiple read operations. The presented device on the wire network can potentially offer a memory for integration into smart textile.

Dynamic selective switching in antiferromagnetically-coupled bilayers close to the spin reorientation transition

International Nuclear Information System (INIS)

Fernández-Pacheco, A.; Mansell, R.; Petit, D.; Lee, J. H.; Cowburn, R. P.; Ummelen, F. C.; Swagten, H. J. M.

2014-01-01

We have designed a bilayer synthetic antiferromagnet where the order of layer reversal can be selected by varying the sweep rate of the applied magnetic field. The system is formed by two ultra-thin ferromagnetic layers with different proximities to the spin reorientation transition, coupled antiferromagnetically using Ruderman-Kittel-Kasuya-Yosida interactions. The different dynamic magnetic reversal behavior of both layers produces a crossover in their switching fields for field rates in the kOe/s range. This effect is due to the different effective anisotropy of both layers, added to an appropriate asymmetric antiferromagnetic coupling between them. Field-rate controlled selective switching of perpendicular magnetic anisotropy layers as shown here can be exploited in sensing and memory applications.

Purification of reversibly oxidized proteins (PROP reveals a redox switch controlling p38 MAP kinase activity.

Directory of Open Access Journals (Sweden)

Dennis J Templeton

2010-11-01

Full Text Available Oxidation of cysteine residues of proteins is emerging as an important means of regulation of signal transduction, particularly of protein kinase function. Tools to detect and quantify cysteine oxidation of proteins have been a limiting factor in understanding the role of cysteine oxidation in signal transduction. As an example, the p38 MAP kinase is activated by several stress-related stimuli that are often accompanied by in vitro generation of hydrogen peroxide. We noted that hydrogen peroxide inhibited p38 activity despite paradoxically increasing the activating phosphorylation of p38. To address the possibility that cysteine oxidation may provide a negative regulatory effect on p38 activity, we developed a biochemical assay to detect reversible cysteine oxidation in intact cells. This procedure, PROP, demonstrated in vivo oxidation of p38 in response to hydrogen peroxide and also to the natural inflammatory lipid prostaglandin J2. Mutagenesis of the potential target cysteines showed that oxidation occurred preferentially on residues near the surface of the p38 molecule. Cysteine oxidation thus controls a functional redox switch regulating the intensity or duration of p38 activity that would not be revealed by immunodetection of phosphoprotein commonly interpreted as reflective of p38 activity.

Hidden Randomness between Fitness Landscapes Limits Reverse Evolution

Science.gov (United States)

Tan, Longzhi; Serene, Stephen; Xiao Chao, Hui; Gore, Jeff

2012-02-01

Natural populations must constantly adapt to the ever-changing environment. A fundamental question in evolutionary biology is whether adaptations can be reversed by returning the population to its ancestral environment. Traditionally, reverse evolution is defined as restoring an ancestral phenotype (physical characteristics such as body size), and the classic Dollo's Law has hypothesized the impossibility of reversing complex adaptations. However, this ``law'' remains ambiguous unless reverse evolution can be studied at the level of genotypes (the underlying genome sequence). We measured the fitness landscapes of a bacterial antibiotic-resistance gene and analyzed the reversibility of evolution as a global, statistical feature of the landscapes. In both experiments and simulations, we find that an adaptation's reversibility declines as the number of mutations it involves increases, suggesting a probabilistic form of Dollo's Law at the molecular level. We also show computationally that slowly switching between environments facilitates reverse evolution in small populations, where clonal interference is negligible or moderate. This is an analogy to thermodynamics, where the reversibility of a physical process is maximized when conditions are modified infinitely slowly.

Switching behaviour of coupled antiferro- and ferromagnetic systems: exchange bias

Energy Technology Data Exchange (ETDEWEB)

Lindgaard, Per-Anker [Materials Research Division, Risoe National Laboratory for Sustainable Energy, Danish Technical University, DK-4000 Roskilde (Denmark)

2009-11-25

The switching behaviour, under reversal of an external field, of a simple, ideal magnetic nanoparticle is studied and the interplay between antiferromagnets and ferromagnets elucidated. It is found that the switching between various multi- q ordering in fcc antiferromagnets (as found theoretically in NiO nanoparticles (Kodama and Berkowitz 1999 Phys. Rev. B 59 6321 and Lindgaard 2003 J. Magn. Magn. Mater. 266 88)) in a field severely limits the exchange biasing potential. The interface between the different magnets is found to be that originally assumed by Meiklejohn and Bean (1956 Phys. Rev. 102 1413).

Influence of polymerisation on the reversibility of low-energy proton exchange reactions by Para-Aminothiolphenol

NARCIS (Netherlands)

Balakrishnan, Divya; Lamblin, Guillaume; Thomann, Jean Sebastien; Guillot, Jerome; Duday, David; Van Den Berg, Albert; Olthuis, Wouter; Pascual-García, César

2017-01-01

The reversibility of redox processes is an important function for sensing and molecular electronic devices such as pH reporters or molecular switches. Here we report the electrochemical behaviour and redox reversibility of para-aminothiolphenol (PATP) after different polymerisation methods. We used

Resistive switching memory properties of layer-by-layer assembled enzyme multilayers

International Nuclear Information System (INIS)

Baek, Hyunhee; Cho, Jinhan; Lee, Chanwoo; Lim, Kwang-il

2012-01-01

The properties of enzymes, which can cause reversible changes in currents through redox reactions in solution, are of fundamental and practical importance in bio-electrochemical applications. These redox properties of enzymes are often associated with their charge-trap sites. Here, we demonstrate that reversible changes in resistance in dried lysozyme (LYS) films can be generated by an externally applied voltage as a result of charge trap/release. Based on such changes, LYS can be used as resistive switching active material for nonvolatile memory devices. In this study, cationic LYS and anionic poly(styrene sulfonate) (PSS) layers were alternately deposited onto Pt-coated silicon substrates using a layer-by-layer assembly method. Then, top electrodes were deposited onto the top of LYS/PSS multilayers to complete the fabrication of the memory-like device. The LYS/PSS multilayer devices exhibited typical resistive switching characteristics with an ON/OFF current ratio above 10 2 , a fast switching speed of 100 ns and stable performance. Furthermore, the insertion of insulating polyelectrolytes (PEs) between the respective LYS layers significantly enhanced the memory performance of the devices showing a high ON/OFF current ratio of ∼10 6 and low levels of power consumption. (paper)

Precessional switching of antiferromagnets by electric field induced Dzyaloshinskii-Moriya torque

Science.gov (United States)

Kim, T. H.; Grünberg, P.; Han, S. H.; Cho, B. K.

2018-05-01

Antiferromagnetic insulators (AFIs) have attracted much interest from many researchers as promising candidates for use in ultrafast, ultralow-dissipation spintronic devices. As a fast method of reversing magnetization, precessional switching is realized when antiferromagnetic Néel orders l =(s1+s2 )/2 surmount the magnetic anisotropy or potential barrier in a given magnetic system, which is described well by the antiferromagnetic plane pendulum (APP) model. Here, we report that, as an alternative switching scenario, the direct coupling of an electric field with Dzyaloshinskii-Moriya (DM) interaction, which stems from spin-orbit coupling, is exploited for optimal switching. We derive the pendulum equation of motion of antiferromagnets, where DM torque is induced by a pulsed electric field. The temporal DM interaction is found to not only be in the form of magnetic torques (e.g., spin-orbit torque or magnetic field) but also modifies the magnetic potential that limits l 's activity; as a result, appropriate controls (e.g., direction, magnitude, and pulse shape) of the induced DM vector realize deterministic reversal in APP. The results present an approach for the control of a magnetic storage device by means of an electric field.

Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography

KAUST Repository

Tu, Kun-Hua

2018-04-10

Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.

Switching field of partially exchange-coupled particles

International Nuclear Information System (INIS)

Oliva, M.I.; Bertorello, H.R.; Bercoff, P.G.

2004-01-01

The magnetization reversal of partially exchange-coupled particles is studied in detail. The starting point is the observation of a complicated phenomenology in the irreversible susceptibility and FORC distribution functions of Ba hexaferrite samples obtained by means of different sintering conditions. Several peaks in the first-order reversal curve (FORC) distribution functions were identified and associated with clusters with different number of particles. The switching fields of these clusters were related to an effective anisotropy constant Keff that depends on the number of particles in the cluster. Keff is linked to the exchange-coupled volume between two neighboring particles and as a weighted mean between the anisotropy constants of the coupled and uncoupled volumes. By using the modified Brown's equation αex=0.322 is obtained.In order to interpret these results, the switching field of a two-particle system with partial exchange coupling is studied. It is assumed that the spins reorientation across the contact plane between the particles is like a Bloch wall. The energy of the system is written in terms of the fraction of volume affected by exchange coupling and the switching fields for both particles are calculated. At small interaction volume fraction each particle inverts its magnetization independently from the other. As the fraction of exchange-coupled volume increases, cooperative effects appear and the two particles invert their magnetization in a cooperative way.The proposed model allows to interpret for the first time the empirical factor αex in terms of physical arguments and also explain the details observed in the FORC distribution function

Photoinduced local heating in silica photonic crystals for fast and reversible switching.

Science.gov (United States)

Gallego-Gómez, Francisco; Blanco, Alvaro; López, Cefe

2012-12-04

Fast and reversible photonic-bandgap tunability is achieved in silica artificial opals by local heating. The effect is fully reversible as heat rapidly dissipates through the non-irradiated structure without active cooling and water is readsorbed. The performance is strongly enhanced by decreasing the photoirradiated opal volume, allowing bandgap shifts of 12 nm and response times of 20 ms. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Micromagnetic analysis of geometrically controlled current-driven magnetization switching

Directory of Open Access Journals (Sweden)

O. Alejos

2017-05-01

Full Text Available The magnetization dynamics induced by current pulses in a pair of two “S-shaped” ferromagnetic elements, each one consisting on two oppositely tilted tapered spikes at the ends of a straight section, is theoretically studied by means of micromagnetic simulations. Our results indicate that the magnetization reversal is triggered by thermal activation, which assists the current-induced domain nucleation and the propagation of domain walls. The detailed analysis of the magnetization dynamics reveals that the magnetization switching is only achieved when a single domain wall is nucleated in the correct corner of the element. In agreement with recent experimental studies, the switching is purely dictated by the shape, being independent of the current polarity. The statistical study points out that successful switching is only achieved within a narrow range of the current pulse amplitudes.

New switching processes using the integrated protections of power semi-conductors: application to the development of static converters with self-switching process; nouveaux mecanismes de commutation exploitant les protections integrees des semi-conducteurs de puissance: application a la conception de convertisseurs statiques a commutation automatique

Energy Technology Data Exchange (ETDEWEB)

Roux, N.

2004-07-15

This thesis deals with a new switching process which integrates the semiconductor protection directly in the switching principle, in order to generate new static converters. It consists of a self-controlled transition which proceeds on a non-zero current or voltage level. 2 It can be associated with controlled or naturally switching processes making it possible to go from two to five change of state types of a switching cell. So, new elementary operation rules of a switching cell emerge. Considering the great number of possible switches, a synthesis methodology of cells with a source reversibility, whose switches are identical, is presented making it possible to reveal various solutions, of which two seem particularly interesting: the self-breaking inverter and rectifier cells, both using the self-breaking thyristor-dual. This last is used as study support of the self-breaking principle. Then, the manuscript concentrates on the study of converters, associations of elementary cells, revealing in particular the DC-current transformer and the reversible three-phase self-breaking rectifier. This last had been developed as an industrial prototype. Lastly, starting from the concept of a wind chain, our assembly has been compared with what is presently done as network converters, revealing lesser losses as well as a higher energetic efficiency. (author)

Impact of switching antiretroviral therapy on lipodystrophy and other metabolic complications: a review

DEFF Research Database (Denmark)

Hansen, Birgitte Rønde; Haugaard, Steen B; Iversen, Johan

2004-01-01

Following the introduction of highly active antiretroviral therapy (HAART), metabolic and morphological complications known as HIV associated lipodystrophy syndrome (HALS) have been increasingly common. The approaches to target these complications span from resistance exercise, diet and use...... with the disfiguring body-alterations known as HALS. More recently, however, regimens containing nucleoside reverse-transcriptase inhibitors (NRTI) have attracted attention. Reviewing switch studies regarding metabolic parameters and body shape changes, certain trends emerge. Switching from PI, the metabolic...

Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

International Nuclear Information System (INIS)

Aurelio, D.; Torres, L.; Finocchio, G.

2009-01-01

This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes.

Coordinated phenotype switching with large-scale chromosome flip-flop inversion observed in bacteria.

Science.gov (United States)

Cui, Longzhu; Neoh, Hui-min; Iwamoto, Akira; Hiramatsu, Keiichi

2012-06-19

Genome inversions are ubiquitous in organisms ranging from prokaryotes to eukaryotes. Typical examples can be identified by comparing the genomes of two or more closely related organisms, where genome inversion footprints are clearly visible. Although the evolutionary implications of this phenomenon are huge, little is known about the function and biological meaning of this process. Here, we report our findings on a bacterium that generates a reversible, large-scale inversion of its chromosome (about half of its total genome) at high frequencies of up to once every four generations. This inversion switches on or off bacterial phenotypes, including colony morphology, antibiotic susceptibility, hemolytic activity, and expression of dozens of genes. Quantitative measurements and mathematical analyses indicate that this reversible switching is stochastic but self-organized so as to maintain two forms of stable cell populations (i.e., small colony variant, normal colony variant) as a bet-hedging strategy. Thus, this heritable and reversible genome fluctuation seems to govern the bacterial life cycle; it has a profound impact on the course and outcomes of bacterial infections.

Wireless Chalcogenide Nanoionic-Based Radio-Frequency Switch

Science.gov (United States)

Nessel, James; Miranda, Felix

2013-01-01

A new nonvolatile nanoionic switch is powered and controlled through wireless radio-frequency (RF) transmission. A thin layer of chalcogenide glass doped with a metal ion, such as silver, comprises the operational portion of the switch. For the switch to function, an oxidizable electrode is made positive (anode) with respect to an opposing electrode (cathode) when sufficient bias, typically on the order of a few tenths of a volt or more, is applied. This action causes the metal ions to flow toward the cathode through a coordinated hopping mechanism. At the cathode, a reduction reaction occurs to form a metal deposit. This metal deposit creates a conductive path that bridges the gap between electrodes to turn the switch on. Once this conductive path is formed, no further power is required to maintain it. To reverse this process, the metal deposit is made positive with respect to the original oxidizable electrode, causing the dissolution of the metal bridge thereby turning the switch off. Once the metal deposit has been completely dissolved, the process self-terminates. This switching process features the following attributes. It requires very little to change states (i.e., on and off). Furthermore, no power is required to maintain the states; hence, the state of the switch is nonvolatile. Because of these attributes the integration of a rectenna to provide the necessary power and control is unique to this embodiment. A rectenna, or rectifying antenna, generates DC power from an incident RF signal. The low voltages and power required for the nanoionic switch control are easily generated from this system and provide the switch with a novel capability to be operated and powered from an external wireless device. In one realization, an RF signal of a specific frequency can be used to set the switch into an off state, while another frequency can be used to set the switch to an on state. The wireless, miniaturized, and nomoving- part features of this switch make it

An extension of the Néel-Brown model for systems with multiple switching pathways

Energy Technology Data Exchange (ETDEWEB)

Roy, Arnab; Kumar, P.S. Anil, E-mail: anil@physics.iisc.ernet.in

2017-02-15

TheNéel-Brown model is the most widely accepted model for the description of magnetization reversal by thermal excitation. This model predicts a decreasing average switching field and an increasing width ΔH of switching field distribution as the temperature is increased, and has been found to hold good on several occasions. However, for a few classes of systems, the temperature dependence of ΔH shows the opposite trend, and so far no satisfactory explanation exists. We present here an experimental study of switching field statistics of permalloy (Ni{sub 80}Fe{sub 20}) thin films on Si(100) grown by pulsed laser ablation. It was seen that the sample deviates from the Neel-Brown behavior in the manner described above. We performed calculations based on a natural extension of the Néel-Brown model, which incorporated multiple reversal pathways characterized by a Gaussian distribution of coercive fields. Calculations based on this model for different values of the width parameter σ{sub HSW} show two distinct kinds of behavior. At low values of σ{sub HSW}, the total width ΔH is limited by thermal broadening according to the traditional Neel-Brown expression. This regime is characterized by an increasing ΔH with temperature. For high σ{sub HSW}, the broadening is dominated by σ{sub HSW}, which masks thermal broadening. In this regime, ΔH decreases with increasing temperature. Whereas the experimentally observed temperature dependence of the average switching field was found to be in good agreement with this model, qualitative agreement with regard to the temperature dependence of ΔH could be observed only for relaxation times lower than ~10{sup −40} s, which is much smaller than Néel-Brown relaxation times (10{sup −9}–10{sup −19} s) usually encountered in the literature. - Highlights: • The Néel-Brown model for magnetization reversal over an energy barrier due to thermal excitation is a widely accepted mechanism for magnetization reversal, and has

Resistance switching in epitaxial SrCoOx thin films

Science.gov (United States)

Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

2014-08-01

We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO3 (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO2.5) and conducting perovskite (SrCoO3-δ) depending on the oxygen content. The current-voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoOx thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO2.5.

Resistance switching in epitaxial SrCoOx thin films

International Nuclear Information System (INIS)

Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

2014-01-01

We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO 3 (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO 2.5 ) and conducting perovskite (SrCoO 3−δ ) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO x thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO 2.5

The Organization of Behavior Over Time: Insights from Mid-Session Reversal

OpenAIRE

Rayburn-Reeves, Rebecca M.; Cook, Robert G.

2016-01-01

What are the mechanisms by which behavior is organized sequentially over time? The recently developed mid-session reversal (MSR) task offers new insights into this fundamental question. The typical MSR task is arranged to have a single reversed discrimination occurring in a consistent location within each session and across sessions. In this task, we examine the relevance of time, reinforcement, and other factors as the switching cue in the sequential modulation of control in MSR. New analyse...

Gold Nanoparticles with Externally Controlled, Reversible Shifts of Local Surface Plasmon Resonance Bands

Science.gov (United States)

Yavuz, Mustafa S.; Jensen, Gary C.; Penaloza, David P.; Seery, Thomas A. P.; Pendergraph, Samuel A.; Rusling, James F.; Sotzing, Gregory A.

2010-01-01

We have achieved reversible tunability of local surface plasmon resonance in conjugated polymer functionalized gold nanoparticles. This property was facilitated by the preparation of 3,4-ethylenedioxythiophene (EDOT) containing polynorbornene brushes on gold nanoparticles via surface-initiated ring-opening metathesis polymerization. Reversible tuning of the surface plasmon band was achieved by electrochemically switching the EDOT polymer between its reduced and oxidized states. PMID:19839619

A Component-Reduced Zero-Voltage Switching Three-Level DC-DC Converter

DEFF Research Database (Denmark)

Qin, Zian; Pang, Ying; Wang, Huai

2016-01-01

The basic Zero-Voltage Switching (ZVS) three-level DC-DC converter has one clamping capacitor to realize the ZVS of the switches, and two clamping diodes to clamp the voltage of the clamping capacitor. In order to reduce the reverse recovery loss of the diode as well as its cost, this paper...... proposes to remove one of the clamping diodes in basic ZVS three-level DC-DC converter. With less components, the proposed converter can still have a stable clamping capacitor voltage, which is clamped at half of the dc link voltage. Moreover, the ZVS performance will be influenced by removing the clamping...

Influence Of The Switching field On The Magnetization Process Thin Film Magneto optic

International Nuclear Information System (INIS)

Atmono, Tri Mardji

1996-01-01

The investigation of influence of switching field on the magnetic reversal process of bilayer Fe Tb/FeTbCo has been done. Thin film has been produced by sputtering method using mosaic target placed as cathode. The experiment shows that the interface wall between two layers is created due to the shifting of the switching field from the coercive force of the single layer. At the temperature of 26 o C, the special magnetization process accurst because the two layers have the same value of switching field : For the range of the magnetic field -3.8 kg o C o C. This mean that the compensation point lies in this temperature range

Reversal of diabetic nephropathy by a ketogenic diet.

Directory of Open Access Journals (Sweden)

Michal M Poplawski

Full Text Available Intensive insulin therapy and protein restriction delay the development of nephropathy in a variety of conditions, but few interventions are known to reverse nephropathy. Having recently observed that the ketone 3-beta-hydroxybutyric acid (3-OHB reduces molecular responses to glucose, we hypothesized that a ketogenic diet, which produces prolonged elevation of 3-OHB, may reverse pathological processes caused by diabetes. To address this hypothesis, we assessed if prolonged maintenance on a ketogenic diet would reverse nephropathy produced by diabetes. In mouse models for both Type 1 (Akita and Type 2 (db/db diabetes, diabetic nephropathy (as indicated by albuminuria was allowed to develop, then half the mice were switched to a ketogenic diet. After 8 weeks on the diet, mice were sacrificed to assess gene expression and histology. Diabetic nephropathy, as indicated by albumin/creatinine ratios as well as expression of stress-induced genes, was completely reversed by 2 months maintenance on a ketogenic diet. However, histological evidence of nephropathy was only partly reversed. These studies demonstrate that diabetic nephropathy can be reversed by a relatively simple dietary intervention. Whether reduced glucose metabolism mediates the protective effects of the ketogenic diet remains to be determined.

Reversal of Diabetic Nephropathy by a Ketogenic Diet

Science.gov (United States)

Poplawski, Michal M.; Mastaitis, Jason W.; Isoda, Fumiko; Grosjean, Fabrizio; Zheng, Feng; Mobbs, Charles V.

2011-01-01

Intensive insulin therapy and protein restriction delay the development of nephropathy in a variety of conditions, but few interventions are known to reverse nephropathy. Having recently observed that the ketone 3-beta-hydroxybutyric acid (3-OHB) reduces molecular responses to glucose, we hypothesized that a ketogenic diet, which produces prolonged elevation of 3-OHB, may reverse pathological processes caused by diabetes. To address this hypothesis, we assessed if prolonged maintenance on a ketogenic diet would reverse nephropathy produced by diabetes. In mouse models for both Type 1 (Akita) and Type 2 (db/db) diabetes, diabetic nephropathy (as indicated by albuminuria) was allowed to develop, then half the mice were switched to a ketogenic diet. After 8 weeks on the diet, mice were sacrificed to assess gene expression and histology. Diabetic nephropathy, as indicated by albumin/creatinine ratios as well as expression of stress-induced genes, was completely reversed by 2 months maintenance on a ketogenic diet. However, histological evidence of nephropathy was only partly reversed. These studies demonstrate that diabetic nephropathy can be reversed by a relatively simple dietary intervention. Whether reduced glucose metabolism mediates the protective effects of the ketogenic diet remains to be determined. PMID:21533091

New solid state opening switches for repetitive pulsed power technology

Energy Technology Data Exchange (ETDEWEB)

Lyubutin, S K; Mesyats, G A; Rukin, S N; Slovikovskii, B G; Turov, A M [Russian Academy of Sciences, Ekaterinburg (Russian Federation). Inst. of Electrophysics

1997-12-31

In 1991 the authors discovered a semiconductor opening switch (SOS) effect that occurs in p{sup +}-p-n-n{sup +} silicon structures at a current density of up to 60 kA/cm{sup 2}. This effect was used to develop high-power semiconductor opening switches in intermediate inductive storage circuits. The breaking power of the opening switches was as high as 5 GW, the interrupted current being up to 45 kA, reverse voltage up to 1 MV and the current interruption time between 10 and 60 ns. The opening switches were assembled from quantity-produced Russian-made rectifying diodes type SDL with hard recovery characteristic. On the basis of experimental and theoretical investigations of the SOS effect, new SOS diodes were designed and manufactured by the Electrophysical Institute. The paper gives basic parameters of the SOS diodes. The new diodes offer higher values of interrupted current and shorter times of current interruption together with a considerable increase in the energy switching efficiency. The new SOS diodes were used to develop repetitive all-solid-state pulsed generators with an output voltage of up to 250 kV, pulse repetition rate up to 5 kHz, and pulse duration between 10 and 30 ns. (author). 2 tabs., 3 figs., 4 refs.

A zero-voltage-switched three-phase interleaved buck converter

Science.gov (United States)

Hsieh, Yao-Ching; Huang, Bing-Siang; Lin, Jing-Yuan; Pham, Phu Hieu; Chen, Po-Hao; Chiu, Huang-Jen

2018-04-01

This paper proposes a three-phase interleaved buck converter which is composed of three identical paralleled buck converters. The proposed solution has three shunt inductors connected between each other of three basic buck conversion units. With the help of the shunt inductors, the MOSFET parasitic capacitances will resonate to achieve zero-voltage-switching. Furthermore, the decreasing rate of the current through the free-wheeling diodes is limited, and therefore, their reverse-recovery losses can be minimised. The active power switches are controlled by interleaved pulse-width modulation signals to reduce the input and output current ripples. Therefore, the filtering capacitances on the input and output sides can be reduced. The power efficiency is measured to be as high as 98% in experiment with a prototype circuit.

A dual-stimuli-responsive fluorescent switch ultrathin film

Science.gov (United States)

Li, Zhixiong; Liang, Ruizheng; Liu, Wendi; Yan, Dongpeng; Wei, Min

2015-10-01

Stimuli-responsive fluorescent switches have shown broad applications in optical devices, biological materials and intelligent responses. Herein, we describe the design and fabrication of a dual-stimuli-responsive fluorescent switch ultrathin film (UTF) via a three-step layer-by-layer (LBL) technique: (i) encapsulation of spiropyran (SP) within an amphiphilic block copolymer (PTBEM) to give the (SP@PTBEM) micelle; (ii) the mixture of riboflavin (Rf) and poly(styrene 4-sulfonate) (PSS) to enhance the adhesion ability of small molecules; (iii) assembly of negatively charged SP@PTBEM and Rf-PSS with cationic layered double hydroxide (LDH) nanoplatelets to obtain the (Rf-PSS/LDH/SP@PTBEM)n UTFs (n: bilayer number). The assembly process of the UTFs and their luminescence properties, as monitored by fluorescence spectroscopy and scanning electron microscopy (SEM), present a uniform and ordered layered structure with stepwise growth. The resulting Rf-PSS/LDH/SP@PTBEM UTF serves as a three-state switchable multicolor (green, yellow, and red) luminescent system based on stimulation from UV/Vis light and pH, with an acceptable reversibility. Therefore, this work provides a facile way to fabricate stimuli-responsive solid-state film switches with tunable-color luminescence, which have potential applications in the areas of displays, sensors, and rewritable optical memory and fluorescent logic devices.Stimuli-responsive fluorescent switches have shown broad applications in optical devices, biological materials and intelligent responses. Herein, we describe the design and fabrication of a dual-stimuli-responsive fluorescent switch ultrathin film (UTF) via a three-step layer-by-layer (LBL) technique: (i) encapsulation of spiropyran (SP) within an amphiphilic block copolymer (PTBEM) to give the (SP@PTBEM) micelle; (ii) the mixture of riboflavin (Rf) and poly(styrene 4-sulfonate) (PSS) to enhance the adhesion ability of small molecules; (iii) assembly of negatively charged SP

The neural basis of task switching changes with skill acquisition

Directory of Open Access Journals (Sweden)

Koji eJimura

2014-05-01

Full Text Available Learning novel skills involves reorganization and optimization of cognitive processing involving a broad network of brain regions. Previous work has shown asymmetric costs of switching to a well-trained task versus a poorly-trained task, but the neural basis of these differential switch costs is unclear. The current study examined the neural signature of task switching in the context of acquisition of new skill. Human participants alternated randomly between a novel visual task (mirror-reversed word reading and a highly practiced one (plain word reading, allowing the isolation of task switching and skill set maintenance. Two scan sessions were separated by two weeks, with behavioral training on the mirror reading task in between the two sessions. Broad cortical regions, including bilateral prefrontal, parietal, and extrastriate cortices, showed decreased activity associated with learning of the mirror reading skill. In contrast, learning to switch to the novel skill was associated with decreased activity in a focal subcortical region in the dorsal striatum. Switching to the highly practiced task was associated with a non-overlapping set of regions, suggesting substantial differences in the neural substrates of switching as a function of task skill. Searchlight multivariate pattern analysis also revealed that learning was associated with decreased pattern information for mirror versus plain reading tasks in fronto-parietal regions. Inferior frontal junction and posterior parietal cortex showed a joint effect of univariate activation and pattern information. These results suggest distinct learning mechanisms task performance and executive control as a function of learning.

Experimental research on the overvoltage protection of high-power thyristor switch

International Nuclear Information System (INIS)

Chang Lei; Yang Jianhua; Liu Lie

2010-01-01

The influence of resistance-capacitance absorption circuit and static equalizing resistance to thyristor switching performance is investigated, regarding both one single thyristor and two serial thyristors. A conclusion that the higher charging voltage the higher peak value of forward current, reverse current and rising rate has been achieved. To one single thyristor, the resistance-capacitance absorption circuit makes the peak value and rising rate of forward and reverse currents much higher, but lower pulse width; different resistance values (2,10) of resistance-capacitance absorption circuit make no sense to the amplitude and rising rate of forward current, and the pulse width of reverse current. However, the higher the resistance value the lower the amplitude of reverse current, which leads to a lower current rising rate. To the two serial thyristors, the current amplitudes are not precisely half that of one single thyristor, and the forward current is a little higher while the reverse one is obviously lower; the rising time of forward and reverse currents is shortened, especially for the reverse current which is only 1/5 of one single thyristor. Notably, the capacitance impact of thyristor should not be ignored. (authors)

Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films

Energy Technology Data Exchange (ETDEWEB)

Lim, Herianto, E-mail: mail@heriantolim.com; Stavrias, Nikolas; Johnson, Brett C.; McCallum, Jeffrey C. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Marvel, Robert E.; Haglund, Richard F. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States)

2014-03-07

Vanadium dioxide (VO{sub 2}) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulator–to–metal transition, the phase transition in VO{sub 2} can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO{sub 2} with erbium ions (Er{sup 3+}) and observe their combined properties. The first excited-state luminescence of Er{sup 3+} lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal amplification and generation in silicon photonics. The incorporation of Er{sup 3+} into VO{sub 2} could therefore result in a novel photonic material capable of simultaneous optical switching and amplification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO{sub 2} thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO{sub 2} by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ∼800 °C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO{sub 2} thin films. We conclude that Er-implanted VO{sub 2} can function as an optical switch and amplifier, but with reduced switching quality compared to pure VO{sub 2}.

Microstructure evolution characteristics induced by oxygen vacancy generation in anatase TiO2 based resistive switching devices

Science.gov (United States)

Liu, Chen; Gao, Bin; Huang, Peng; Kang, Jinfeng

2017-03-01

In this work, first principle calculations are employed to study the microstructure characteristics of the anatase TiO2 resistive switching material associated with the generation of oxygen vacancy (V o) based nanofilaments during the switching process. The calculations indicate that both the magnéli phase Ti4O7 and V o-defect phase of anatase TiO2 may be formed with the generation of oxygen vacancies during the forming and SET processes. Based on the calculations, a new physical insight is proposed to clarify the microstructure evolution characteristics of the anatase TiO2 resistive switching material and the correlation with resistive switching behaviors. During the forming or SET process, the anatase TiO2 is first excited to a transition state with the generation of oxygen vacancies, then fully relaxes to a stable V o-defect state. This V o-defect state may either recover to the original state with the recombination of the oxygen vacancies, which causes the reversible resistive switching behavior, or further transform to a much more stable state—the magnéli phase Ti4O7, through a phase transition process with the generation of many more oxygen vacancies. The phase transition from V o- defective anatase phase to magnéli phase Ti4O7 causes the failure of the resistive switching due to the significantly reduced possibility of the reversible phase transition from the magnéli phase to the anatase phase, compared with the possibility of the recombination from the V o-defective anatase.

Polarity-dependent resistance switching in GeSbTe phase-change thin films : The importance of excess Sb in filament formation

NARCIS (Netherlands)

Pandian, Ramanathaswamy; Kooi, Bart J.; Oosthoek, Jasper L. M.; van den Dool, Pim; Palasantzas, George; Pauza, Andrew

2009-01-01

We show that polarity-dependent resistance switching in GeSbTe thin films depends strongly on Sb composition by comparing current-voltage characteristics in Sb-excess Ge(2)Sb(2+x)Te(5) and stoichiometric Ge(2)Sb(2)Te(5) samples. This type of switching in Ge(2)Sb(2+x)Te(5) films is reversible with

Resistivity switching properties of Li-doped ZnO films deposited on LaB_6 electrode

International Nuclear Information System (INIS)

Igityan, A.; Kafadaryan, Y.; Aghamalyan, N.; Petrosyan, S.; Badalyan, G.; Vardanyan, V.; Nersisyan, M.; Hovsepyan, R.; Palagushkin, A.; Kryzhanovsky, B.

2015-01-01

Current–voltage (I–V) characteristics of Al/p-ZnO:Li/LaB_6 device, measured in voltage sweep mode, show unipolar resistive switching and monostable threshold switching (URS and MTS) for different bias voltage polarities. URS could be transformed to MTS by application of reverse bias voltage. With increasing number of cycles, URS is converted to bipolar resistive switching mode which is lost after certain number of cycles, and device turns into an ordinary resistor. Analysis of linear fitting I–V curves suggests that ohmic and space charge limited current laws are responsible for conductivity mechanism of Al/p-ZnO:Li/LaB_6 device. - Highlights: • Al/p-ZnO:Li/LaB_6 memristive device is fabricated using an e-beam evaporation technique. • Current–voltage (I–V) characteristics are studied. • Type of resistive switching mode depends on the bias voltage polarity and number of switching cycles. • Resistive switching in Al/ZnO:Li/LaB_6 has an interfacial effect. • Ohmic and SCLC laws are responsible for conductivity mechanism of resistive states.

Reduced Fluorescent Protein Switching Fatigue by Binding-Induced Emissive State Stabilization

Directory of Open Access Journals (Sweden)

Thijs Roebroek

2017-09-01

Full Text Available Reversibly switchable fluorescent proteins (RSFPs enable advanced fluorescence imaging, though the performance of this imaging crucially depends on the properties of the labels. We report on the use of an existing small binding peptide, named Enhancer, to modulate the spectroscopic properties of the recently developed rsGreen series of RSFPs. Fusion constructs of Enhancer with rsGreen1 and rsGreenF revealed an increased molecular brightness and pH stability, although expression in living E. coli or HeLa cells resulted in a decrease of the overall emission. Surprisingly, Enhancer binding also increased off-switching speed and resistance to switching fatigue. Further investigation suggested that the RSFPs can interconvert between fast- and slow-switching emissive states, with the overall protein population gradually converting to the slow-switching state through irradiation. The Enhancer modulates the spectroscopic properties of both states, but also preferentially stabilizes the fast-switching state, supporting the increased fatigue resistance. This work demonstrates how the photo-physical properties of RSFPs can be influenced by their binding to other small proteins, which opens up new horizons for applications that may require such modulation. Furthermore, we provide new insights into the photoswitching kinetics that should be of general consideration when developing new RSFPs with improved or different photochromic properties.

Single component, reversible ionic liquids for energy applications

Energy Technology Data Exchange (ETDEWEB)

Vittoria Blasucci; Ryan Hart; Veronica Llopis Mestre; Dominique Julia Hahne; Melissa Burlager; Hillary Huttenhower; Beng Joo Reginald Thio; Pamela Pollet; Charles L. Liotta; Charles A. Eckert [Georgia Institute of Technology, Atlanta, GA (United States). Chemical & Biomolecular Engineering

2010-06-15

Single component, reversible ionic liquids have excellent potential as novel solvents for a variety of energy applications. Our energy industry is faced with many new challenges including increased energy consumption, depleting oil reserves, and increased environmental awareness. We report the use of reversible ionic liquids to solve two energy challenges: extraction of hydrocarbons from contaminated crude oil and carbon capture from power plant flue gas streams. Our reversible solvents are derived from silylated amine molecular liquids which react with carbon dioxide reversibly to form ionic liquids. Here we compare the properties of various silylated amine precursors and their corresponding ionic liquids. We show how the property changes are advantageous in the two aforementioned energy applications. In the case of hydrocarbon purification, we take advantage of the polarity switch between precursor and ionic liquid to enable separations. In carbon capture, our solvents act as dual physical and chemical capture agents for carbon dioxide. Finally, we show the potential economics of scale-up for both processes. 20 refs., 1 fig., 3 tabs.

Bank switched memory interface for an image processor

International Nuclear Information System (INIS)

Barron, M.; Downward, J.

1980-09-01

A commercially available image processor is interfaced to a PDP-11/45 through an 8K window of memory addresses. When the image processor was not in use it was desired to be able to use the 8K address space as real memory. The standard method of accomplishing this would have been to use UNIBUS switches to switch in either the physical 8K bank of memory or the image processor memory. This method has the disadvantage of being rather expensive. As a simple alternative, a device was built to selectively enable or disable either an 8K bank of memory or the image processor memory. To enable the image processor under program control, GEN is contracted in size, the memory is disabled, a device partition for the image processor is created above GEN, and the image processor memory is enabled. The process is reversed to restore memory to GEN. The hardware to enable/disable the image and computer memories is controlled using spare bits from a DR-11K output register. The image processor and physical memory can be switched in or out on line with no adverse affects on the system's operation

Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers

DEFF Research Database (Denmark)

Liu, Guangqing; Zhang, Qi; Huang, Hsin-Hui

2016-01-01

Polarization rotation engineering is a promising path to giant dielectric and electromechanical responses in ferroelectric materials and devices. This work demonstrates robust and reversible in- to out-of-plane polarization rotation in ultrathin (nanoscale) epitaxial (001) tetragonal PbZr0.3Ti0.7O3...... large-scale polarization rotation switching (≈60 μC cm−2) and an effective d 33 response 500% (≈250 pm V−1) larger than the PZT-R layer alone. Furthermore, this enhancement is stable for more than 107 electrical switching cycles. These bilayers present a simple and highly controllable means to design...... and optimize rotational polar systems as an alternate to traditional composition-based approaches. The precise control of the subtle interface-driven interactions between the lattice and the external factors that control polarization opens a new door to enhanced—or completely new—functional properties....

Tuning the Colors of the Dark Isomers of Photochromic Boron Compounds with Fluoride Ions: Four-State Color Switching.

Science.gov (United States)

Mellerup, Soren K; Rao, Ying-Li; Amarne, Hazem; Wang, Suning

2016-09-02

Combining a three-coordinated boron (BMes2) moiety with a four-coordinated photochromic organoboron unit leads to a series of new diboron compounds that undergo four-state reversible color switching in response to stimuli of light, heat, and fluoride ions. Thus, these hybrid diboron systems allow both convenient color tuning/switching of such photochromic systems, as well as visual fluoride sensing by color or fluorescent emission color change.

Resonant magneto-acoustic switching: influence of Rayleigh wave frequency and wavevector

Science.gov (United States)

Kuszewski, P.; Camara, I. S.; Biarrotte, N.; Becerra, L.; von Bardeleben, J.; Savero Torres, W.; Lemaître, A.; Gourdon, C.; Duquesne, J.-Y.; Thevenard, L.

2018-06-01

We show on in-plane magnetized thin films that magnetization can be switched efficiently by 180 degrees using large amplitude Rayleigh waves travelling along the hard or easy magnetic axis. Large characteristic filament-like domains are formed in the latter case. Micromagnetic simulations clearly confirm that this multi-domain configuration is compatible with a resonant precessional mechanism. The reversed domains are in both geometries several hundreds of , much larger than has been shown using spin transfer torque- or field-driven precessional switching. We show that surface acoustic waves can travel at least 1 mm before addressing a given area, and can interfere to create magnetic stripes that can be positioned with a sub-micronic precision.

Static magnetism and thermal switching in randomly oriented L10 FePt thin films

Science.gov (United States)

Lisfi, A.; Pokharel, S.; Alqarni, A.; Akioya, O.; Morgan, W.; Wuttig, M.

2018-05-01

Static magnetism and thermally activated magnetic relaxation were investigated in granular FePt films (20 nm-200 nm thick) with random magnetic anisotropy through hysteresis loop, torque curve and magnetization time dependence measurements. While the magnetism of thicker film (200 nm thick) is dominated by a single switching of the ordered L10 phase, thinner film (20 nm) displays a double switching, which is indicative of the presence of the disordered cubic phase. The pronounced behavior of double switching in thinner film suggests that the film grain boundary is composed of soft cubic magnetic phase. The magnetic relaxation study reveals that magnetic viscosity S of the films is strongly dependent on the external applied field and exhibits a maximum value (12 kAm) around the switching field and a vanishing behavior at low (1 kOe) and large (12 kOe) fields. The activation volume of the thermal switching was found to be much smaller than the physical volume of the granular structure due to the incoherent rotation mode of the magnetization reversal mechanism, which is established to be domain wall nucleation.

Resistive switching in Pt/TiO{sub 2}/Pt

Energy Technology Data Exchange (ETDEWEB)

Jeong, Doo Seok

2008-08-15

Recently, the resistive switching behavior in TiO{sub 2} has drawn attention due to its application to resistive random access memory (RRAM) devices. TiO{sub 2} shows characteristic non-volatile resistive switching behavior, i.e. reversible switching between a high resistance state (HRS) and a low resistance state (LRS). Both unipolar resistive switching (URS) and bipolar resistive switching (BRS) are found to be observed in TiO{sub 2} depending on the compliance current for the electroforming. In this thesis the characteristic current-voltage (I-V) hysteresis in three different states of TiO{sub 2}, pristine, URS-activated, and BRS-activated states, was investigated and understood in terms of the migration of oxygen vacancies in TiO{sub 2}. The I-V hysteresis of pristine TiO{sub 2} was found to show volatile behavior. That is, the temporary variation of the resistance took place depending on the applied voltage. However, the I-V hysteresis of URS- and BRS-activated states showed non-volatile resistive switching behavior. Some evidences proving the evolution of oxygen gas during electroforming were obtained from time-of-flight secondary ion mass spectroscopy analysis and the variation of the morphology of switching cells induced by the electroforming. On the assumption that a large number of oxygen vacancies are introduced by the electroforming process, the I-V behavior in electroformed switching cells was simulated with varying the distribution of oxygen vacancies in electroformed TiO{sub x} (x

Rational Design of an Ultrasensitive Quorum-Sensing Switch.

Science.gov (United States)

Zeng, Weiqian; Du, Pei; Lou, Qiuli; Wu, Lili; Zhang, Haoqian M; Lou, Chunbo; Wang, Hongli; Ouyang, Qi

2017-08-18

One of the purposes of synthetic biology is to develop rational methods that accelerate the design of genetic circuits, saving time and effort spent on experiments and providing reliably predictable circuit performance. We applied a reverse engineering approach to design an ultrasensitive transcriptional quorum-sensing switch. We want to explore how systems biology can guide synthetic biology in the choice of specific DNA sequences and their regulatory relations to achieve a targeted function. The workflow comprises network enumeration that achieves the target function robustly, experimental restriction of the obtained candidate networks, global parameter optimization via mathematical analysis, selection and engineering of parts based on these calculations, and finally, circuit construction based on the principles of standardization and modularization. The performance of realized quorum-sensing switches was in good qualitative agreement with the computational predictions. This study provides practical principles for the rational design of genetic circuits with targeted functions.

Lineage Switching in Acute Leukemias: A Consequence of Stem Cell Plasticity?

Directory of Open Access Journals (Sweden)

Elisa Dorantes-Acosta

2012-01-01

Full Text Available Acute leukemias are the most common cancer in childhood and characterized by the uncontrolled production of hematopoietic precursor cells of the lymphoid or myeloid series within the bone marrow. Even when a relatively high efficiency of therapeutic agents has increased the overall survival rates in the last years, factors such as cell lineage switching and the rise of mixed lineages at relapses often change the prognosis of the illness. During lineage switching, conversions from lymphoblastic leukemia to myeloid leukemia, or vice versa, are recorded. The central mechanisms involved in these phenomena remain undefined, but recent studies suggest that lineage commitment of plastic hematopoietic progenitors may be multidirectional and reversible upon specific signals provided by both intrinsic and environmental cues. In this paper, we focus on the current knowledge about cell heterogeneity and the lineage switch resulting from leukemic cells plasticity. A number of hypothetical mechanisms that may inspire changes in cell fate decisions are highlighted. Understanding the plasticity of leukemia initiating cells might be fundamental to unravel the pathogenesis of lineage switch in acute leukemias and will illuminate the importance of a flexible hematopoietic development.

Magnetization Reversal of Nanoscale Islands: How Size and Shape Affect the Arrhenius Prefactor

Science.gov (United States)

Krause, S.; Herzog, G.; Stapelfeldt, T.; Berbil-Bautista, L.; Bode, M.; Vedmedenko, E. Y.; Wiesendanger, R.

2009-09-01

The thermal switching behavior of individual in-plane magnetized Fe/W(110) nanoislands is investigated by a combined study of variable-temperature spin-polarized scanning tunneling microscopy and Monte Carlo simulations. Even for islands consisting of less than 100 atoms the magnetization reversal takes place via nucleation and propagation. The Arrhenius prefactor is found to strongly depend on the individual island size and shape, and based on the experimental results a simple model is developed to describe the magnetization reversal in terms of metastable states. Complementary Monte Carlo simulations confirm the model and provide new insight into the microscopic processes involved in magnetization reversal of smallest nanomagnets.

Reversal of liver fibrosis: From fiction to reality.

Science.gov (United States)

Zoubek, Miguel Eugenio; Trautwein, Christian; Strnad, Pavel

2017-04-01

In chronic liver diseases, an ongoing hepatocellular injury together with inflammatory reaction results in activation of hepatic stellate cells (HSCs) and increased deposition of extracellular matrix (ECM) termed as liver fibrosis. It can progress to cirrhosis that is characterized by parenchymal and vascular architectural changes together with the presence of regenerative nodules. Even at late stage, liver fibrosis is reversible and the underlying mechanisms include a switch in the inflammatory environment, elimination or regression of activated HSCs and degradation of ECM. While animal models have been indispensable for our understanding of liver fibrosis, they possess several important limitations and need to be further refined. A better insight into the liver fibrogenesis resulted in a large number of clinical trials aiming at reversing liver fibrosis, particularly in patients with non-alcoholic steatohepatitis. Collectively, the current developments demonstrate that reversal of liver fibrosis is turning from fiction to reality. Copyright © 2017. Published by Elsevier Ltd.

The reverse remodeling response to sacubitril/valsartan therapy in heart failure with reduced ejection fraction.

Science.gov (United States)

Martens, Pieter; Beliën, Hanne; Dupont, Matthias; Vandervoort, Pieter; Mullens, Wilfried

2018-05-17

Major classes of medical therapy for heart failure with reduced ejection fraction (HFrEF) induce reverse remodeling. The revere remodeling response to sacubitril/valsartan remains unstudied. We performed a single-center, prospective assessor-blinded study to determine the reverse remodeling response of sacubitril/valsartan therapy in HFrEF patients with a class I indication (New York heart Association [NYHA]-class II-IV, Left ventricular ejection fraction [LVEF] sacubitril/valsartan were optimized to individual tolerance. Echocardiographic images were assessed offline by 2 investigators blinded to both the clinical data and timing of echocardiograms. One-hundred-twenty-five HFrEF patients (66 ± 10 years) were prospectively included. The amount of RAS-blocker before and after switch to sacubitril/valsartan was similar(P = .290), indicating individual optimal dosing of sacubitril/valsartan. Over a median(IQR) follow-up of 118(77-160) days after initiation of sacubitril/valsartan, LVEF improved (29.6 ± 6% vs 34.8 ± 6%; P sacubitril/valsartan leading to more reverse remodeling. Switching therapy in eligible HFrEF patients from a RAS-blocker to sacubitril/valsartan induces beneficial reverse remodeling of both metrics of systolic as diastolic function. © 2018 John Wiley & Sons Ltd.

Supra-dendron Gelator Based on Azobenzene-Cyclodextrin Host-Guest Interactions: Photoswitched Optical and Chiroptical Reversibility.

Science.gov (United States)

Xie, Fan; Ouyang, Guanghui; Qin, Long; Liu, Minghua

2016-12-12

A novel amphiphilic dendron (AZOC 8 GAc) with three l-glutamic acid units and an azobenzene moiety covalently linked by an alkyl spacer has been designed. The compound formed hydrogels with water at very low concentration and self-assembled into chiral-twist structures. The gel showed a reversible macroscopic volume phase transition in response to pH variations and photo-irradiation. During the photo-triggered changes, although the gel showed complete reversibility in its optical absorptions, only an incomplete chiroptical property change was achieved. On the other hand, the dendron could form a 1:1 inclusion complex through a host-guest interaction with α-cyclodextrin (α-CD), designated as supra-dendron gelator AZOC 8 GAc/α-CD. The supra-dendron showed similar gelation behavior to that of AZOC 8 GAc, but with enhanced photoisomerization-transition efficiency and chiroptical switching capacity, which was completely reversible in terms of both optical and chiroptical performances. The self-assembly of the supra-dendron is a hierarchical or multi-supramolecular self-assembling process. This work has clearly illustrated that the hierarchical and multi-supramolecular self-assembling system endows the supramolecular nanostructures or materials with superior reversible optical and chiroptical switching. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

Energy Technology Data Exchange (ETDEWEB)

Gadzhiyev, I. M., E-mail: idris.intop@mail.ru; Buyalo, M. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Gubenko, A. E. [Innolume GmbH (Germany); Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2016-06-15

The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

International Nuclear Information System (INIS)

Gadzhiyev, I. M.; Buyalo, M. S.; Gubenko, A. E.; Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L.

2016-01-01

The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

Magnetization switching diagram of a perpendicular synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer

Energy Technology Data Exchange (ETDEWEB)

Koplak, O. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Institute of Problems of Chemical Physics, 142432 Chernogolovka, Moscow (Russian Federation); Talantsev, A. [Institute of Problems of Chemical Physics, 142432 Chernogolovka, Moscow (Russian Federation); Lu, Y.; Hamadeh, A.; Pirro, P.; Hauet, T. [Institut Jean Lamour, UMR 7198 CNRS, Université de Lorraine (France); Morgunov, R., E-mail: morgunov2005@yandex.ru [Institute of Problems of Chemical Physics, 142432 Chernogolovka, Moscow (Russian Federation); Tambov State Technical University, 392000 Tambov (Russian Federation); Mangin, S. [Institut Jean Lamour, UMR 7198 CNRS, Université de Lorraine (France)

2017-07-01

Highlights: • Anisotropy, Zeeman and exchange energy determine sequence of magnetic transitions. • Three temperature ranges manifest different shapes of the hysteresis loop. • The critical transition fields are temperature dependent. - Abstract: Magnetic configurations in synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer with strong perpendicular anisotropy have been systematically studied. Magnetization versus field hysteresis loop has been measured for different temperature ranging from 5 to 300 K. The applied field – temperature (H-T) magnetization switching diagram has been constructed by extracting the different switching fields as a function of temperature. This switching diagram can be well explained by considering the competition between energy barrier of layer’s magnetization reversal, interlayer exchange coupling, and Zeeman energy.

Magnetization switching diagram of a perpendicular synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer

International Nuclear Information System (INIS)

Koplak, O.; Talantsev, A.; Lu, Y.; Hamadeh, A.; Pirro, P.; Hauet, T.; Morgunov, R.; Mangin, S.

2017-01-01

Highlights: • Anisotropy, Zeeman and exchange energy determine sequence of magnetic transitions. • Three temperature ranges manifest different shapes of the hysteresis loop. • The critical transition fields are temperature dependent. - Abstract: Magnetic configurations in synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer with strong perpendicular anisotropy have been systematically studied. Magnetization versus field hysteresis loop has been measured for different temperature ranging from 5 to 300 K. The applied field – temperature (H-T) magnetization switching diagram has been constructed by extracting the different switching fields as a function of temperature. This switching diagram can be well explained by considering the competition between energy barrier of layer’s magnetization reversal, interlayer exchange coupling, and Zeeman energy.

Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

Science.gov (United States)

Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

2018-05-01

The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

A rapidly-reversible absorptive and emissive vapochromic Pt(II) pincer-based chemical sensor.

Science.gov (United States)

Bryant, M J; Skelton, J M; Hatcher, L E; Stubbs, C; Madrid, E; Pallipurath, A R; Thomas, L H; Woodall, C H; Christensen, J; Fuertes, S; Robinson, T P; Beavers, C M; Teat, S J; Warren, M R; Pradaux-Caggiano, F; Walsh, A; Marken, F; Carbery, D R; Parker, S C; McKeown, N B; Malpass-Evans, R; Carta, M; Raithby, P R

2017-11-27

Selective, robust and cost-effective chemical sensors for detecting small volatile-organic compounds (VOCs) have widespread applications in industry, healthcare and environmental monitoring. Here we design a Pt(II) pincer-type material with selective absorptive and emissive responses to methanol and water. The yellow anhydrous form converts reversibly on a subsecond timescale to a red hydrate in the presence of parts-per-thousand levels of atmospheric water vapour. Exposure to methanol induces a similarly-rapid and reversible colour change to a blue methanol solvate. Stable smart coatings on glass demonstrate robust switching over 10 4 cycles, and flexible microporous polymer membranes incorporating microcrystals of the complex show identical vapochromic behaviour. The rapid vapochromic response can be rationalised from the crystal structure, and in combination with quantum-chemical modelling, we provide a complete microscopic picture of the switching mechanism. We discuss how this multiscale design approach can be used to obtain new compounds with tailored VOC selectivity and spectral responses.

Toward understanding of the role of reversibility of phenotypic switching in the evolution of resistance to therapy

Science.gov (United States)

Horvath, D.; Brutovsky, B.

2018-06-01

Reversibility of state transitions is intensively studied topic in many scientific disciplines over many years. In cell biology, it plays an important role in epigenetic variation of phenotypes, known as phenotypic plasticity. More interestingly, the cell state reversibility is probably crucial in the adaptation of population phenotypic heterogeneity to environmental fluctuations by evolving bet-hedging strategy, which might confer to cancer cells resistance to therapy. In this article, we propose a formalization of the evolution of highly reversible states in the environments of periodic variability. Two interrelated models of heterogeneous cell populations are proposed and their behavior is studied. The first model captures selection dynamics of the cell clones for the respective levels of phenotypic reversibility. The second model focuses on the interplay between reversibility and drug resistance in the particular case of cancer. Overall, our results show that the threshold dependencies are emergent features of the investigated model with eventual therapeutic relevance. Presented examples demonstrate importance of taking into account cell to cell heterogeneity within a system of clones with different reversibility quantified by appropriately chosen genetic and epigenetic entropy measures.

Resistance switching in epitaxial SrCoO{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk, E-mail: cu-jung@hufs.ac.kr [Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791 (Korea, Republic of); Kim, Yeon Soo; Park, Bae Ho [Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-791 (Korea, Republic of); Jeong, Huiseong; Park, Ji-Yong [Department of Physics and Division of Energy System Research, Ajou University, Suwon 443-749 (Korea, Republic of); Cho, Myung Rae; Park, Yun Daniel [Department of Physics and Astronomy and Center for Subwavelength Optics, Seoul National University, Seoul 151-747 (Korea, Republic of); Choi, Woo Seok [Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Dong-Wook [Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of); Jin, Hyunwoo; Lee, Suyoun [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong [Department of Material Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of)

2014-08-11

We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3−δ}) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

Continued indinavir versus switching to indinavir/ritonavir in HIV-infected patients with suppressed viral load.

NARCIS (Netherlands)

Arnaiz, J.A.; Mallolas, J.; Podzamczer, D.; Gerstoft, J.; Lundgren, J.D.; Cahn, P.; Fatkenheuer, G.; D'Arminio-Monforte, A.; Casiro, A.; Reiss, P.; Burger, D.M.; Stek Jr, M.; Gatell, J.M.

2003-01-01

OBJECTIVE: To compare continued indinavir (IDV) 8-hourly (q8h) with switching to indinavir/ritonavir (IDV/RTV) 12-hourly (q12h) in HIV-positive patients having suppressed viral load with IDV q8h plus two nucleoside reverse transcriptase inhibitors (NRTI). DESIGN: Multicentre, international,

Continued indinavir versus switching to indinavir/ritonavir in HIV-infected patients with suppressed viral load

NARCIS (Netherlands)

Arnaiz, Juan A.; Mallolas, Josep; Podzamczer, Daniel; Gerstoft, Jan; Lundgren, Jens D.; Cahn, Pedro; Fätkenheuer, Gerd; D'Arminio-Monforte, Antonella; Casiró, Arnaldo; Reiss, Peter; Burger, David M.; Stek, Michael; Gatell, José M.

2003-01-01

Objective: To compare continued indinavir (IDV) 8-hourly (q8h) with switching to indinavir/ritonavir (IDV/RTV) 12-hourly (q12h) in HIV-positive patients having suppressed viral load with IDV q8h plus two nucleoside reverse transcriptase inhibitors (NRTI). Design: Multicentre, international,

Magnetic switching of a single molecular magnet due to spin-polarized current

Science.gov (United States)

Misiorny, Maciej; Barnaś, Józef

2007-04-01

Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic leads (electrodes) is investigated theoretically. Magnetic moments of the leads are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through the barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system, as well as the spin relaxation times of the SMM, are calculated from the Fermi golden rule. It is shown that spin of the SMM can be reversed by applying a certain voltage between the two magnetic electrodes. Moreover, the switching may be visible in the corresponding current-voltage characteristics.

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

KAUST Repository

Wu, S.

2013-12-12

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

A trident dithienylethene-perylenemonoimide dyad with super fluorescence switching speed and ratio

Science.gov (United States)

Li, Chong; Yan, Hui; Zhao, Ling-Xi; Zhang, Guo-Feng; Hu, Zhe; Huang, Zhen-Li; Zhu, Ming-Qiang

2014-12-01

Photoswitchable fluorescent diarylethenes are promising in molecular optical memory and photonic devices. However, the performance of current diarylethenes is far from satisfactory because of the scarcity of high-speed switching capability and large fluorescence on-off ratio. Here we report a trident perylenemonoimide dyad modified by triple dithienylethenes whose photochromic fluorescence quenching ratio at the photostationary state exceeds 10,000 and the fluorescence quenching efficiency is close to 100% within seconds of ultraviolet irradiation. The highly sensitive fluorescence on/off switching of the trident dyad enables recyclable fluorescence patterning and all-optical transistors. The prototype optical device based on the trident dyad enables the optical switching of incident light and conversion from incident light wavelength to transmitted light wavelength, which is all-optically controlled, reversible and wavelength-convertible. In addition, the trident dyad-staining block copolymer vesicles are observed via optical nanoimaging with a sub-100 nm resolution, portending a potential prospect of the dithienylethene dyad in super-resolution imaging.

Monte Carlo simulation for thermal assisted reversal process of micro-magnetic torus ring with bistable closure domain structure

Energy Technology Data Exchange (ETDEWEB)

Terashima, Kenichi; Suzuki, Kenji; Yamaguchi, Katsuhiko, E-mail: yama@sss.fukushima-u.ac.jp

2016-04-01

Monte Carlo simulations were performed for temperature dependences of closure domain parameter for a magnetic micro-torus ring cluster under magnetic field on limited temperature regions. Simulation results show that magnetic field on tiny limited temperature region can reverse magnetic closure domain structures when the magnetic field is applied at a threshold temperature corresponding to intensity of applied magnetic field. This is one of thermally assisted switching phenomena through a self-organization process. The results show the way to find non-wasteful pairs between intensity of magnetic field and temperature region for reversing closure domain structure by temperature dependence of the fluctuation of closure domain parameter. Monte Carlo method for this simulation is very valuable to optimize the design of thermally assisted switching devices.

Synchronization Between Two Different Switched Chaotic Systems By Switching Control

Directory of Open Access Journals (Sweden)

Du Li Ming

2016-01-01

Full Text Available This paper is concerned with the synchronization problem of two different switched chaotic systems, considering the general case that the master-slave switched chaotic systems have uncertainties. Two basic problems are considered: one is projective synchronization of switched chaotic systems under arbitrary switching; the other is projective synchronization of switched chaotic systems by design of switching when synchronization cannot achieved by using any subsystems alone. For the two problems, common Lyapunov function method and multiple Lyapunov function method are used respectively, an adaptive control scheme has been presented, some sufficient synchronization conditions are attainted, and the switching signal is designed. Finally, the numerical simulation is provide to show the effectiveness of our method.

Diarylethene microcrystals make directional jumps upon ultraviolet irradiation

International Nuclear Information System (INIS)

Colombier, I.; Spagnoli, S.; Corval, A.; Baldeck, P. L.; Giraud, M.; Leaustic, A.; Yu, P.; Irie, M.

2007-01-01

Microcrystals of a diarylethene {1,2-bis[5 ' -methyl-2 ' -(2 '' -pyridyl)thiazolyl]perfluorocyclo-pentene } undergo jumps upon photoirradiation. These photochromic crystals present molecular structural changes upon irradiation with ultraviolet light because of reversible photocyclization reactions. When the energy absorbed by crystals reaches about 10 μJ, the uniaxial stress induced in the crystal lattice relaxes through directional jumps. If one prevents crystals from jumping, then parallel, equidistant cracks appear on crystal surfaces. These photomechanical effects could result from a Grinfeld surface instability

Exciter switch

Science.gov (United States)

Mcpeak, W. L.

1975-01-01

A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

Dynamical similarity of geomagnetic field reversals.

Science.gov (United States)

Valet, Jean-Pierre; Fournier, Alexandre; Courtillot, Vincent; Herrero-Bervera, Emilio

2012-10-04

No consensus has been reached so far on the properties of the geomagnetic field during reversals or on the main features that might reveal its dynamics. A main characteristic of the reversing field is a large decrease in the axial dipole and the dominant role of non-dipole components. Other features strongly depend on whether they are derived from sedimentary or volcanic records. Only thermal remanent magnetization of lava flows can capture faithful records of a rapidly varying non-dipole field, but, because of episodic volcanic activity, sequences of overlying flows yield incomplete records. Here we show that the ten most detailed volcanic records of reversals can be matched in a very satisfactory way, under the assumption of a common duration, revealing common dynamical characteristics. We infer that the reversal process has remained unchanged, with the same time constants and durations, at least since 180 million years ago. We propose that the reversing field is characterized by three successive phases: a precursory event, a 180° polarity switch and a rebound. The first and third phases reflect the emergence of the non-dipole field with large-amplitude secular variation. They are rarely both recorded at the same site owing to the rapidly changing field geometry and last for less than 2,500 years. The actual transit between the two polarities does not last longer than 1,000 years and might therefore result from mechanisms other than those governing normal secular variation. Such changes are too brief to be accurately recorded by most sediments.

Development and analysis of U-core switched reluctance machine

DEFF Research Database (Denmark)

Jæger, Rasmus; Nielsen, Simon Staal; Rasmussen, Peter Omand

2016-01-01

Switched reluctance machines (SRMs) have seen a lot of interest due to their rugged and fault tolerant construction as well as their high efficiency over a wide speed range. The technology however suffers from torque ripple, acoustic noise and low torque density. Many concepts to address these di......Switched reluctance machines (SRMs) have seen a lot of interest due to their rugged and fault tolerant construction as well as their high efficiency over a wide speed range. The technology however suffers from torque ripple, acoustic noise and low torque density. Many concepts to address...... and reduced flux reversal, reducing core losses. Due to an increased number of poles, torque density is increased and torque ripple reduced. A prototype is built and through a number of tests, the machine is mapped and all loss components are analysed. As a result of the analysis, an assessment is presented...

A Switch Is Not a Switch: Syntactically-Driven Bilingual Language Control

Science.gov (United States)

Gollan, Tamar H.; Goldrick, Matthew

2018-01-01

The current study investigated the possibility that language switches could be relatively automatically triggered by context. "Single-word switches," in which bilinguals switched languages on a single word in midsentence and then immediately switched back, were contrasted with more complete "whole-language switches," in which…

Switching Phenomena in a System with No Switches

Science.gov (United States)

Preis, Tobias; Stanley, H. Eugene

2010-02-01

It is widely believed that switching phenomena require switches, but this is actually not true. For an intriguing variety of switching phenomena in nature, the underlying complex system abruptly changes from one state to another in a highly discontinuous fashion. For example, financial market fluctuations are characterized by many abrupt switchings creating increasing trends ("bubble formation") and decreasing trends ("financial collapse"). Such switching occurs on time scales ranging from macroscopic bubbles persisting for hundreds of days to microscopic bubbles persisting only for a few seconds. We analyze a database containing 13,991,275 German DAX Future transactions recorded with a time resolution of 10 msec. For comparison, a database providing 2,592,531 of all S&P500 daily closing prices is used. We ask whether these ubiquitous switching phenomena have quantifiable features independent of the time horizon studied. We find striking scale-free behavior of the volatility after each switching occurs. We interpret our findings as being consistent with time-dependent collective behavior of financial market participants. We test the possible universality of our result by performing a parallel analysis of fluctuations in transaction volume and time intervals between trades. We show that these financial market switching processes have properties similar to those of phase transitions. We suggest that the well-known catastrophic bubbles that occur on large time scales—such as the most recent financial crisis—are no outliers but single dramatic representatives caused by the switching between upward and downward trends on time scales varying over nine orders of magnitude from very large (≈102 days) down to very small (≈10 ms).

Energy efficient and fast reversal of a fixed skyrmion two-terminal memory with spin current assisted by voltage controlled magnetic anisotropy

Science.gov (United States)

Bhattacharya, Dhritiman; Mamun Al-Rashid, Md; Atulasimha, Jayasimha

2017-10-01

Recent work (P-H Jang et al 2015 Appl. Phys. Lett. 107 202401, J. Sampaio et al 2016 Appl. Phys. Lett. 108 112403) suggests that ferromagnetic reversal with spin transfer torque (STT) requires more current in a system in the presence of Dzyaloshinskii-Moriya interaction (DMI) than switching a typical ferromagnet of the same dimensions and perpendicular magnetic anisotropy (PMA). However, DMI promotes the stabilization of skyrmions and we report that when perpendicular anisotropy is modulated (reduced) for both the skyrmion and ferromagnet, it takes a much smaller current to reverse the fixed skyrmion than to reverse the ferromagnet in the same amount of time, or the skyrmion reverses much faster than the ferromagnet at similar levels of current. We show with rigorous micromagnetic simulations that skyrmion switching proceeds along a different path at very low PMA, which results in a significant reduction in the spin current or time required for reversal. This can offer potential for memory applications where a relatively simple modification of the standard STT-RAM (to include a heavy metal adjacent to the soft magnetic layer and with appropriate design of the tunnel barrier) can lead to an energy efficient and fast magnetic memory device based on the reversal of fixed skyrmions.

Temperature induced Spin Switching in SmFeO3 Single Crystal

Science.gov (United States)

Cao, Shixun; Zhao, Huazhi; Kang, Baojuan; Zhang, Jincang; Ren, Wei

2014-08-01

The prospect of controlling the magnetization (M) of a material is of great importance from the viewpoints of fundamental physics and future applications of emerging spintronics. A class of rare-earth orthoferrites RFeO3 (R is rare-earth element) materials exhibit striking physical properties of spin switching and magnetization reversal induced by temperature and/or applied magnetic field. Furthermore, due to the novel magnetic, magneto-optic and multiferroic properties etc., RFeO3 materials are attracting more and more interests in recent years. We have prepared and investigated a prototype of RFeO3 materials, namely SmFeO3 single-crystal. And we report magnetic measurements upon both field cooling (FC) and zero-field cooling (ZFC) of the sample, as a function of temperature and applied magnetic field. The central findings of this study include that the magnetization of single-crystal SmFeO3 can be switched by temperature, and tuning the magnitude of applied magnetic field allows us to realize such spin switching even at room temperature.

Electric polarization switching in an atomically thin binary rock salt structure

Science.gov (United States)

Martinez-Castro, Jose; Piantek, Marten; Schubert, Sonja; Persson, Mats; Serrate, David; Hirjibehedin, Cyrus F.

2018-01-01

Inducing and controlling electric dipoles is hindered in the ultrathin limit by the finite screening length of surface charges at metal-insulator junctions1-3, although this effect can be circumvented by specially designed interfaces4. Heterostructures of insulating materials hold great promise, as confirmed by perovskite oxide superlattices with compositional substitution to artificially break the structural inversion symmetry5-8. Bringing this concept to the ultrathin limit would substantially broaden the range of materials and functionalities that could be exploited in novel nanoscale device designs. Here, we report that non-zero electric polarization can be induced and reversed in a hysteretic manner in bilayers made of ultrathin insulators whose electric polarization cannot be switched individually. In particular, we explore the interface between ionic rock salt alkali halides such as NaCl or KBr and polar insulating Cu2N terminating bulk copper. The strong compositional asymmetry between the polar Cu2N and the vacuum gap breaks inversion symmetry in the alkali halide layer, inducing out-of-plane dipoles that are stabilized in one orientation (self-poling). The dipole orientation can be reversed by a critical electric field, producing sharp switching of the tunnel current passing through the junction.

Angular dependence of switching behaviour in template released isolated NiFe nanowires

Science.gov (United States)

Sultan, Musaab Salman

2017-12-01

In this article, the magnetisation behaviour and magnetisation reversal process of both single and bundles of 3 and 7 closely-packed template released Ni60Fe40 nanowires were investigated using high-sensitivity Magneto-Optical Kerr Effect (MOKE) magnetometry. The nanowires were deposited from a dilute suspension onto gold pre-patterned silicon substrates. They were typically 9 μm in length with a diameter of approximately 200 nm. By increasing the number of clumped wires a reduction in the switching field was observed, suggesting that overall the bundle behaves like a single system and decreasing the effective external field required to switch the magnetisation. Square hysteresis loops with a sharp jump in the Kerr signal were seen for all MOKE measurement angles. This result may reflect the surface magnetisation of the nanowire, compared to their bulk behaviour as compared with the literature that adopted the same and different investigative techniques on comparable compositions and dimensions of wires. The influence of applying the magnetic field at different angles with respect to the long axis of the nanowire on the switching behaviour was analysed and compared with the theoretical calculations of non-uniform rotation of the curling model of domain reversal. An agreement and disagreement with this model was seen, respectively, for low and high angles, indicating the complexity of the magnetic state of such isolated nanowires. To confirm the results presented here, further studies are recommended using a combination of techniques sensitive to surface and bulk magnetisation on similar isolated ferromagnetic nanowires.

''Positive'' and ''negative'' electric-pulse-induced reversible resistance switching effect in Pr0.7Ca0.3MnO3 films

International Nuclear Information System (INIS)

Wang, Q.; Chen, L.D.; Li, X.M.; Shang, D.S.; Wu, Z.H.

2007-01-01

''Negative'' electric-pulse-induced reversible resistance (EPIR) switching phenomenon was found in In/PCMO/Pt sandwich, in which the high resistance can be written with positive voltage pulses, and the low resistance can be reset using negative voltage pulses (the positive voltage direction is defined as going from the top electrode to the bottom electrode). This is just the opposite from the ''positive'' EPIR effect in Ag/PCMO/Pt sandwich, in which the high resistance can be written only with negative voltage pulses, and the low resistance can be reset using positive voltage pulses. The I-V hysteresis curves of In/PCMO/Pt and Ag/PCMO/Pt sandwiches also show opposite directions, i.e., counterclockwise and clockwise under a negative voltage region for indium and Ag electrode systems, respectively. C-V characteristics show that the barrier does not exist in Ag/PCMO/Pt sandwich, while In/PCMO/Pt sandwich exhibits an obvious Schottky-like barrier. We suggest that in the negative EPIR behavior in In/PCMO/Pt structure, the resistance states are mainly controlled changing the Schottky-like barrier at the interface with the weak effect of carrier trapping process, while the positive EPIR behavior in Ag/PCMO/Pt sandwich mainly depends on the carrier trapping process at the interface. (orig.)

Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

Directory of Open Access Journals (Sweden)

Shuxiang Wu

2013-12-01

Full Text Available Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures, where the conducting layer near the LaAlO_{3}/SrTiO_{3} interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO_{3}/SrTiO_{3} interface and the creation of defect-induced gap states within the ultrathin LaAlO_{3} layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

Simultaneous determination of triple therapy for Helicobacter pylori in human plasma by reversed phase chromatography with online wavelength switching

Science.gov (United States)

Ahmed, Sameh; Atia, Noha N.

2015-02-01

The infection of gastric mucosa by Helicobacter pylori (HP) is an essential cofactor in the aetiology of gastroduodenal ulcer and gastric carcinoma. Because of the bacterial resistance, combination therapy containing omeprazole (OME), tinidazole (TNZ) and clarithromycin (CLA) is commonly used for eradication of HP. However, the simultaneous determination of the triple therapy in human plasma was not reported. A simple, reproducible, and selective HPLC method was developed for the simultaneous determination of the triple therapy mixture used for management of HP infections in human plasma. An HPLC procedure based on a liquid-liquid extraction, enrichment of the analytes and subsequent reversed-phase chromatography with UV detection was used. To enable sensitive and selective detection, the method involved the use of online wavelength switching detection, with two different detection wavelengths; 280 nm for detection of OME and TNZ and 210 nm for detection of CLA. Separations were performed on C18 analytical column with acetonitrile-10 mM phosphate buffer of pH = 3.0 at flow rate of 1.0 mL min-1. The linear ranges in human plasma were 0.05-10 μg mL-1 with correlation coefficients >0.9990. The detection limits in human plasma were 0.02-0.07 μg mL-1. Validation parameters were assessed in compliance with US-FDA guidelines. The method proved to be valuable for the therapeutic drug monitoring after oral administration of triple therapy tablets.

An Element of Determinism in a Stochastic Flagellar Motor Switch.

Science.gov (United States)

Xie, Li; Altindal, Tuba; Wu, Xiao-Lun

2015-01-01

Marine bacterium Vibrio alginolyticus uses a single polar flagellum to navigate in an aqueous environment. Similar to Escherichia coli cells, the polar flagellar motor has two states; when the motor is counter-clockwise, the cell swims forward and when the motor is clockwise, the cell swims backward. V. alginolyticus also incorporates a direction randomization step at the start of the forward swimming interval by flicking its flagellum. To gain an understanding on how the polar flagellar motor switch is regulated, distributions of the forward Δf and backward Δb intervals are investigated herein. We found that the steady-state probability density functions, P(Δf) and P(Δb), of freely swimming bacteria are strongly peaked at a finite time, suggesting that the motor switch is not Poissonian. The short-time inhibition is sufficiently strong and long lasting, i.e., several hundred milliseconds for both intervals, which is readily observed and characterized. Treating motor reversal dynamics as a first-passage problem, which results from conformation fluctuations of the motor switch, we calculated P(Δf) and P(Δb) and found good agreement with the measurements.

Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

Science.gov (United States)

Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

2013-09-01

We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

Effects of spin-polarized current on pulse field-induced precessional magnetization reversal

Directory of Open Access Journals (Sweden)

Guang-fu Zhang

2012-12-01

Full Text Available We investigate effects of a small DC spin-polarized current on the pulse field-induced precessional magnetization reversal in a thin elliptic magnetic element by micromagnetic simulations. We find that the spin-polarized current not only broadens the time window of the pulse duration, in which a successful precessional reversal is achievable, but also significantly suppresses the magnetization ringing after the reversal. The pulse time window as well as the decay rate of the ringing increase with increasing the current density. When a spin-polarized current with 5 MA/cm2 is applied, the time window increases from 80 ps to 112 ps, and the relaxation time of the ringing decreases from 1.1 ns to 0.32 ns. Our results provide useful information to achieve magnetic nanodevices based on precessional switching.

Optimal control of switching time in switched stochastic systems with multi-switching times and different costs

Science.gov (United States)

Liu, Xiaomei; Li, Shengtao; Zhang, Kanjian

2017-08-01

In this paper, we solve an optimal control problem for a class of time-invariant switched stochastic systems with multi-switching times, where the objective is to minimise a cost functional with different costs defined on the states. In particular, we focus on problems in which a pre-specified sequence of active subsystems is given and the switching times are the only control variables. Based on the calculus of variation, we derive the gradient of the cost functional with respect to the switching times on an especially simple form, which can be directly used in gradient descent algorithms to locate the optimal switching instants. Finally, a numerical example is given, highlighting the validity of the proposed methodology.

Transient-Switch-Signal Suppressor

Science.gov (United States)

Bozeman, Richard J., Jr.

1995-01-01

Circuit delays transmission of switch-opening or switch-closing signal until after preset suppression time. Used to prevent transmission of undesired momentary switch signal. Basic mode of operation simple. Beginning of switch signal initiates timing sequence. If switch signal persists after preset suppression time, circuit transmits switch signal to external circuitry. If switch signal no longer present after suppression time, switch signal deemed transient, and circuit does not pass signal on to external circuitry, as though no transient switch signal. Suppression time preset at value large enough to allow for damping of underlying pressure wave or other mechanical transient.

Reversing the attention effect in figure-ground perception.

Science.gov (United States)

Huang, Liqiang; Pashler, Harold

2009-10-01

Human visual perception is sometimes ambiguous, switching between different perceptual structures, and shifts of attention sometimes favor one perceptual structure over another. It has been proposed that, in figure-ground segmentation, attention to certain regions tends to cause those regions to be perceived as closer to the observer. Here, we show that this attention effect can be reversed under certain conditions. To account for these phenomena, we propose an alternative principle: The visual system chooses the interpretation that maximizes simplicity of the attended regions.

The switching characteristics of free layer of patterned magnetic tunnel junction device

International Nuclear Information System (INIS)

Chen, C.C.; Wang, Y.R.; Kuo, C.Y.; Wu, J.C.; Horng, Lance; Wu, Teho; Yoshimura, S.; Tsunoda, M.; Takahashi, M.

2006-01-01

The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M-H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The MR curve of the patterned element shows stepped minor loop, less loop shifting, and larger coercive field due to shape anisotropy and stray field effects. MFM images of the element show nonuniform domain structures during reversal process

Three-level cobblestone-like TiO2 micro/nanocones for dual-responsive water/oil reversible wetting without fluorination

Science.gov (United States)

Zhou, Chen; Li, Guoqiang; Li, Chuanzong; Zhang, Zhen; Zhang, Yachao; Wu, Sizhu; Hu, Yanlei; Zhu, Wulin; Li, Jiawen; Chu, Jiaru; Hu, Zhijia; Wu, Dong; Yu, Liandong

2017-10-01

In this work, a kind of three-level cobblestone-like anatase TiO2 microcone array was fabricated on titanium sheets by femtosecond laser-induced self-assembly. This three level structure consisted of cobblestone-like features (15-25 μm in height and 20-35 μm in diameter), ˜460 nm ripple-like features, and smaller particles (10-500 nm). The formation of microcone arrays can be ascribed to the interaction of alternant laser beam ablation. TiO2 surfaces display dual-responsive water/oil reversible wetting via heat treatment and selective UV irradiation without fluorination. It is indicated that three-level scale surface roughness can amplify the wetting character of the Ti surface, and the mechanism for reversible switching between extreme wettabilities is caused by the conversion between Ti-OH and Ti-O. Moreover, the double-faced superhydrophobic and double-faced superhydrophilic Ti samples were constructed, which exhibited stable superhydrophobicity and underwater superoleophobicity in water-oil solution, respectively, even when strongly shaken. Finally, we present the hybrid-patterned TiO2 surface and realized reversible switching pattern wettability.

Mechano-actuated ultrafast full-colour switching in layered photonic hydrogels.

Science.gov (United States)

Yue, Youfeng; Kurokawa, Takayuki; Haque, Md Anamul; Nakajima, Tasuku; Nonoyama, Takayuki; Li, Xufeng; Kajiwara, Itsuro; Gong, Jian Ping

2014-08-18

Photonic crystals with tunability in the visible region are of great interest for controlling light diffraction. Mechanochromic photonic materials are periodically structured soft materials designed with a photonic stop-band that can be tuned by mechanical forces to reflect specific colours. Soft photonic materials with broad colour tunability and fast colour switching are invaluable for application. Here we report a novel mechano-actuated, soft photonic hydrogel that has an ultrafast-response time, full-colour tunable range, high spatial resolution and can be actuated by a very small compressive stress. In addition, the material has excellent mechanical stability and the colour can be reversibly switched at high frequency more than 10,000 times without degradation. This material can be used in optical devices, such as full-colour display and sensors to visualize the time evolution of complicated stress/strain fields, for example, generated during the motion of biological cells.

Experimental study of a reverse flow catalytic converter for a duel fuel engine

Energy Technology Data Exchange (ETDEWEB)

Liu, B.; Checkel, M. D. [Alberta Univ., Dept. of Mechanical Engineering, Edmonton, ANB (Canada); Hayes, R. E. [Alberta Univ., Dept, of Chemical and Materials Engineering, Edmonton, AB, (Canada)

2001-08-01

Performance of a reverse flow catalytic converter for a methane/diesel dual fuel engine is evaluated under steady and transient engine conditions. The converter is of the monolith honeycomb type with palladium catalyst washcoat. Results of the reverse flow converter's performance was found to be superior for several steady state engine operations when compared to unidirectional flow operation. In transient operations following a step change in engine operating conditions, reverse flow was found to be better than unidirectional flow when the change in engine operation was such as to reduce the exhaust gas temperature. When exhaust gas temperature was increased, reverse flow decreased the rate of increase in the reactor temperature. Testing was done using the transient Japanese 6-Mode tests. Best results were achieved with a switch time in the five seconds to fifteen seconds range. 31 refs., 9 tabs., 24 figs.

Reverse-mode PSLC multi-plane optical see-through display for AR applications.

Science.gov (United States)

Liu, Shuxin; Li, Yan; Zhou, Pengcheng; Chen, Quanming; Su, Yikai

2018-02-05

In this paper we propose an optical see-through multi-plane display with reverse-mode polymer-stabilized liquid crystal (PSLC). Our design solves the problem of accommodation-vergence conflict with correct focus cues. In the reverse mode PSLC system, power consumption could be reduced to ~1/(N-1) of that in a normal mode system if N planes are displayed. The PSLC films fabricated in our experiment exhibit a low saturation voltage ~20 V rms , a high transparent-state transmittance (92%), and a fast switching time within 2 ms and polarization insensitivity. A proof-of-concept two-plane color display prototype and a four-plane monocolor display prototype were implemented.

Contactless, photoinitiated snap-through in azobenzene-functionalized polymers.

Science.gov (United States)

Shankar, M Ravi; Smith, Matthew L; Tondiglia, Vincent P; Lee, Kyung Min; McConney, Michael E; Wang, David H; Tan, Loon-Seng; White, Timothy J

2013-11-19

Photomechanical effects in polymeric materials and composites transduce light into mechanical work. The ability to control the intensity, polarization, placement, and duration of light irradiation is a distinctive and potentially useful tool to tailor the location, magnitude, and directionality of photogenerated mechanical work. Unfortunately, the work generated from photoresponsive materials is often slow and yields very small power densities, which diminish their potential use in applications. Here, we investigate photoinitiated snap-through in bistable arches formed from samples composed of azobenzene-functionalized polymers (both amorphous polyimides and liquid crystal polymer networks) and report orders-of-magnitude enhancement in actuation rates (approaching 10(2) mm/s) and powers (as much as 1 kW/m(3)). The contactless, ultra-fast actuation is observed at irradiation intensities focusing on isolating the role of sample geometry, mechanical properties of the materials, and photomechanical strain. Using light to trigger contactless, ultrafast actuation in an otherwise passive structure is a potentially versatile tool to use in mechanical design at the micro-, meso-, and millimeter scales as actuators, as well as switches that can be triggered from large standoff distances, impulse generators for microvehicles, microfluidic valves and mixers in laboratory-on-chip devices, and adaptive optical elements.

Coding/decoding and reversibility of droplet trains in microfluidic networks.

Science.gov (United States)

Fuerstman, Michael J; Garstecki, Piotr; Whitesides, George M

2007-02-09

Droplets of one liquid suspended in a second, immiscible liquid move through a microfluidic device in which a channel splits into two branches that reconnect downstream. The droplets choose a path based on the number of droplets that occupy each branch. The interaction among droplets in the channels results in complex sequences of path selection. The linearity of the flow through the microchannels, however, ensures that the behavior of the system can be reversed. This reversibility makes it possible to encrypt and decrypt signals coded in the intervals between droplets. The encoding/decoding device is a functional microfluidic system that requires droplets to navigate a network in a precise manner without the use of valves, switches, or other means of external control.

Digital switched hydraulics

Science.gov (United States)

Pan, Min; Plummer, Andrew

2018-06-01

This paper reviews recent developments in digital switched hydraulics particularly the switched inertance hydraulic systems (SIHSs). The performance of SIHSs is presented in brief with a discussion of several possible configurations and control strategies. The soft switching technology and high-speed switching valve design techniques are discussed. Challenges and recommendations are given based on the current research achievements.

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

Science.gov (United States)

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-01

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Focusing over Optical Fiber Using Time Reversal

DEFF Research Database (Denmark)

Piels, Molly; Porto da Silva, Edson; Estaran Tolosa, Jose Manuel

2015-01-01

A time-reversal array in multimode fiber is proposed for lossless remotely controlled switching using passive optical splitters. The signal to be transmitted is digitally pre-distorted so that it is routed through the physical layer in order to arrive at only one receiver in an array. System...... performance in the presence of additive white gaussian noise, modal group delay, and timing error is investigated numerically for single-mode and 10-mode fiber. Focusing using a two-transmitter array and 44 km of single- mode fiber is demonstrated experimentally for 3 GBd QPSK signals with a bit error rate...

Single molecular switch based on thiol tethered iron(II)clathrochelate on gold

Energy Technology Data Exchange (ETDEWEB)

Viswanathan, Subramanian [Institute of Animal Reproduction and Food Research of the Polish Academy of Sciences, Tuwima 10, 10-747 Olsztyn (Poland); Voloshin, Yan Z. [Nesmeyanov Institute of Organoelement Compounds of the Russian Academy of Sciences, 119991 Moscow (Russian Federation); Radecka, Hanna [Institute of Animal Reproduction and Food Research of the Polish Academy of Sciences, Tuwima 10, 10-747 Olsztyn (Poland); Radecki, Jerzy [Institute of Animal Reproduction and Food Research of the Polish Academy of Sciences, Tuwima 10, 10-747 Olsztyn (Poland)], E-mail: radecki@pan.olsztyn.pl

2009-09-30

Molecular electronics has been associated with high density nano-electronic devices. Developments of molecular electronic devices were based on reversible switching of molecules between the two conductive states. In this paper, self-assembled monolayers of dodecanethiol (DDT) and thiol tethered iron(II)clathrochelate (IC) have been prepared on gold film. The electrochemical and electronic properties of IC molecules inserted into the dodecanethiol monolayer (IC-DDT SAM) were investigated using voltammetric, electrochemical impedance spectroscopy (EIS), scanning tunneling microscopy (STM) and cross-wire tunneling measurements. The voltage triggered switching behaviour of IC molecules on mixed SAM was demonstrated. Deposition of polyaniline on the redox sites of IC-DDT SAM using electrochemical polymerization of aniline was performed in order to confirm that this monolayer acts as nano-patterned semiconducting electrode surface.

Interface and thickness dependent domain switching and stability in Mg doped lithium niobate

Energy Technology Data Exchange (ETDEWEB)

Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Ivanov, Ilia N. [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Manzo, Michele; Gallo, Katia, E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie [Department of Applied Physics, KTH-Royal Institute of Technology, Roslagstullbacken 21, 10691 Stockholm (Sweden); Kholkin, Andrei L. [Department of Physics and CICECO-Aveiro Institute of Materials, 3810-193 Aveiro (Portugal); Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

2015-12-14

Controlling ferroelectric switching in Mg doped lithium niobate (Mg:LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg:LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the “up” to the “down” state increases with increasing thickness in pure Mg:LN, whereas the voltage required for stable back switching to the original “up” state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg:LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg:LN layer above due to the presence of uncompensated polarization charge at the PE-Mg:LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg:LN via electromechanical coupling, which were corroborated with complimentary Raman measurements.

Intentional preparation of auditory attention-switches: Explicit cueing and sequential switch-predictability.

Science.gov (United States)

Seibold, Julia C; Nolden, Sophie; Oberem, Josefa; Fels, Janina; Koch, Iring

2018-06-01

In an auditory attention-switching paradigm, participants heard two simultaneously spoken number-words, each presented to one ear, and decided whether the target number was smaller or larger than 5 by pressing a left or right key. An instructional cue in each trial indicated which feature had to be used to identify the target number (e.g., female voice). Auditory attention-switch costs were found when this feature changed compared to when it repeated in two consecutive trials. Earlier studies employing this paradigm showed mixed results when they examined whether such cued auditory attention-switches can be prepared actively during the cue-stimulus interval. This study systematically assessed which preconditions are necessary for the advance preparation of auditory attention-switches. Three experiments were conducted that controlled for cue-repetition benefits, modality switches between cue and stimuli, as well as for predictability of the switch-sequence. Only in the third experiment, in which predictability for an attention-switch was maximal due to a pre-instructed switch-sequence and predictable stimulus onsets, active switch-specific preparation was found. These results suggest that the cognitive system can prepare auditory attention-switches, and this preparation seems to be triggered primarily by the memorised switching-sequence and valid expectations about the time of target onset.

Redox induced switching dynamics of a three colour electrochromic metallopolymer film

International Nuclear Information System (INIS)

Zeng Qiang; McNally, Andrea; Keyes, Tia E.; Forster, Robert J.

2008-01-01

Thin films of a novel Ru-phenolate based metallopolymer, [Ru(terpy)(box)PVP 20 ]PF 6 , in which one in every twenty of the 4-vinyl pyridine monomer units is labelled with the ruthenium complex have been formed on glassy carbon electrodes, terpy is 2,2':6',2''-terpyridine, box is 2-(2-hydroxyphenyl)benzoxazole, and PVP is poly(4-vinylpyridine). Cyclic voltammetry and Raman spectroscopy reveal that the Ru 2+/3+ couple is electrochemically reversible but that the phenolate ligand based oxidation is irreversible. These redox processes are associated with reversible colour changes from wine red (reduced) to red orange (mixed composition) then to light green (oxidized) in the visible region and an irreversible change in the near-IR region, respectively. Scanning electron microscopy reveals that repeated switching in LiClO 4 aqueous solution does not induce any significant structural change within the deposit films. Cyclic voltammetry has been used to determine the electrochromic switching rate under semi-infinite linear diffusion conditions. In aqueous LiClO 4 , the homogeneous charge transport diffusion coefficient, D CT , decreases from 3.6 ± 0.3 x 10 -13 to 2.7 ± 0.2 x 10 -13 cm 2 s -1 as the LiClO 4 concentration increases from 0.1 to 1.0 M. This weak dependence of D CT on electrolyte concentration suggests that counterion availability is not rate-determining and that the overall rate of charge transport through the metallopolymer film is limited by the rate of segmental polymer chain motion necessary to bring adjacent centres sufficiently close to allow electron transfer to occur. Also the impact of changing the identity of the charge compensating anion of the redox electrochromic switching rate has been investigated. Finally, the electronic conductivity has been determined using interdigitated array electrodes (IDAs)

Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves

Science.gov (United States)

Schmidt, Georg; Goeckeritz, Robert; Homonnay, Nico; Mueller, Alexander; Fuhrmann, Bodo

Resistive switching has already been reported in organic spin valves (OSV), however, its origin is still unclear. We have fabricated nanosized OSV based on La0.7Sr0.3MnO3/Alq3/Co. These devices show fully reversible resistive switching of up to five orders of magnitude. The magnetoresistance (MR) is modulated during the switching process from negative (-70%) to positive values (+23%). The results are reminiscent of experiments claiming magnetoelectric coupling in LSMO based tunneling structures using ferroelectric barriers. By analyzing the I/V characteristics of the devices we can show that transport is dominated by tunneling through pinholes. The resistive switching is caused by voltage induced creation and motion of oxygen vacancies at the LSMO surface, however, the resulting tunnel barrier is complemented by a second adjacent barrier in the organic semiconductor. Our model shows that the barrier in the organic material is constant, causing the initial MR while the barrier in the LMSO can be modulated by the voltage resulting in the resistive switching and the modulation of the MR as the coupling to the states in the LSMO changes. A switching caused by LSMO only is also supported by the fact that replacing ALQ3 by H2PC yields almost identical results. Supported by the DFG in the SFB762.

All-optical spin switching: A new frontier in femtomagnetism — A short review and a simple theory

Science.gov (United States)

Zhang, G. P.; Latta, T.; Babyak, Z.; Bai, Y. H.; George, Thomas F.

2016-08-01

Using an ultrafast laser pulse to manipulate the spin degree of freedom has broad technological appeal. It allows one to control the spin dynamics on a femtosecond time scale. The discipline, commonly called femtomagnetism, started with the pioneering experiment by Beaurepaire and coworkers in 1996, who showed subpicosecond demagnetization occurs in magnetic Ni thin films. This finding has motivated extensive research worldwide. All-optical helicity-dependent spin switching (AO-HDS) represents a new frontier in femtomagnetism, where a single ultrafast laser pulse can permanently switch spin without any assistance from a magnetic field. This review summarizes some of the crucial aspects of this new discipline: key experimental findings, leading mechanisms, controversial issues, and possible future directions. The emphasis is on our latest investigation. We first develop the all-optical spin switching (AOS) rule that determines how the switchability depends on the light helicity. This rule allows one to understand microscopically how the spin is reversed and why the circularly polarized light appears more powerful than the linearly polarized light. Then we invoke our latest spin-orbit coupled harmonic oscillator model to simulate single spin reversal. We consider both continuous wave (cw) excitation and pulsed laser excitation. The results are in a good agreement with the experimental result (a MatLab code is available upon request from the author). We then extend the code to include the exchange interaction among different spin sites. We show where the “inverse-Faraday field” comes from and how the laser affects the spin reversal nonlinearly. Our hope is that this review will motivate new experimental and theoretical investigations and discussions.

Reversibly Bistable Flexible Electronics

KAUST Repository

Alfaraj, Nasir

2015-05-01

Introducing the notion of transformational silicon electronics has paved the way for integrating various applications with silicon-based, modern, high-performance electronic circuits that are mechanically flexible and optically semitransparent. While maintaining large-scale production and prototyping rapidity, this flexible and translucent scheme demonstrates the potential to transform conventionally stiff electronic devices into thin and foldable ones without compromising long-term performance and reliability. In this work, we report on the fabrication and characterization of reversibly bistable flexible electronic switches that utilize flexible n-channel metal-oxide-semiconductor field-effect transistors. The transistors are fabricated initially on rigid (100) silicon substrates before they are peeled off. They can be used to control flexible batches of light-emitting diodes, demonstrating both the relative ease of scaling at minimum cost and maximum reliability and the feasibility of integration. The peeled-off silicon fabric is about 25 µm thick. The fabricated devices are transferred to a reversibly bistable flexible platform through which, for example, a flexible smartphone can be wrapped around a user’s wrist and can also be set back to its original mechanical position. Buckling and cyclic bending of such host platforms brings a completely new dimension to the development of flexible electronics, especially rollable displays.

Structural and temporal requirements for geomagnetic field reversal deduced from lava flows.

Science.gov (United States)

Singer, Brad S; Hoffman, Kenneth A; Coe, Robert S; Brown, Laurie L; Jicha, Brian R; Pringle, Malcolm S; Chauvin, Annick

2005-03-31

Reversals of the Earth's magnetic field reflect changes in the geodynamo--flow within the outer core--that generates the field. Constraining core processes or mantle properties that induce or modulate reversals requires knowing the timing and morphology of field changes that precede and accompany these reversals. But the short duration of transitional field states and fragmentary nature of even the best palaeomagnetic records make it difficult to provide a timeline for the reversal process. 40Ar/39Ar dating of lavas on Tahiti, long thought to record the primary part of the most recent 'Matuyama-Brunhes' reversal, gives an age of 795 +/- 7 kyr, indistinguishable from that of lavas in Chile and La Palma that record a transition in the Earth's magnetic field, but older than the accepted age for the reversal. Only the 'transitional' lavas on Maui and one from La Palma (dated at 776 +/- 2 kyr), agree with the astronomical age for the reversal. Here we propose that the older lavas record the onset of a geodynamo process, which only on occasion would result in polarity change. This initial instability, associated with the first of two decreases in field intensity, began approximately 18 kyr before the actual polarity switch. These data support the claim that complete reversals require a significant period for magnetic flux to escape from the solid inner core and sufficiently weaken its stabilizing effect.

Sialic acid-triggered macroscopic properties switching on a smart polymer surface

Science.gov (United States)

Xiong, Yuting; Li, Minmin; Wang, Hongxi; Qing, Guangyan; Sun, Taolei

2018-01-01

Constructing smart surfaces with responsive polymers capable of dynamically and reversibly changing their chemical and physical properties by responding to the recognition of biomolecules remains a challenging task. And, the key to achieving this purpose relies on the design of polymers to precisely interact with the target molecule and successfully transform the interaction signal into tunable macroscopic properties, further achieve special bio-functions. Herein, inspired by carbohydrate-carbohydrate interaction (CCI) in life system, we developed a three-component copolymer poly(NIPAAm-co-PT-co-Glc) bearing a binding unit glucose (Glc) capable of recognizing sialic acid, a type of important molecular targets for cancer diagnosis and therapy, and reported the sialic acid triggered macroscopic properties switching on this smart polymer surface. Detailed mechanism studies indicated that multiple hydrogen bonding interactions between Glc unit and Neu5Ac destroyed the initial hydrogen bond network of the copolymer, leading to a reversible "contraction-to-swelling" conformational transition of the copolymer chains, accompanied with distinct macroscopic property switching (i.e., surface wettability, morphology, stiffness) of the copolymer film. And these features enabled this copolymer to selectively capture sialic acid-containing glycopeptides from complex protein samples. This work provides an inspiration for the design of novel smart polymeric materials with sensitive responsiveness to sialic acid, which would promote the development of sialic acid-specific bio-devices and drug delivery systems.

Effect of Smoking Abstinence and Reduction in Asthmatic Smokers Switching to Electronic Cigarettes: Evidence for Harm Reversal

Directory of Open Access Journals (Sweden)

Riccardo Polosa

2014-05-01

Full Text Available Electronic cigarettes (e-cigs are marketed as safer alternatives to tobacco cigarettes and have shown to reduce their consumption. Here we report for the first time the effects of e-cigs on subjective and objective asthma parameters as well as tolerability in asthmatic smokers who quit or reduced their tobacco consumption by switching to these products. We retrospectively reviewed changes in spirometry data, airway hyper-responsiveness (AHR, asthma exacerbations and subjective asthma control in smoking asthmatics who switched to regular e-cig use. Measurements were taken prior to switching (baseline and at two consecutive visits (Follow-up/1 at 6 (±1 and Follow-up/2 at 12 (±2 months. Eighteen smoking asthmatics (10 single users, eight dual users were identified. Overall there were significant improvements in spirometry data, asthma control and AHR. These positive outcomes were noted in single and dual users. Reduction in exacerbation rates was reported, but was not significant. No severe adverse events were noted. This small retrospective study indicates that regular use of e-cigs to substitute smoking is associated with objective and subjective improvements in asthma outcomes. Considering that e-cig use is reportedly less harmful than conventional smoking and can lead to reduced cigarette consumption with subsequent improvements in asthma outcomes, this study shows that e-cigs can be a valid option for asthmatic patients who cannot quit smoking by other methods.

Reversal of diuretic-associated impaired glucose tolerance and new-onset diabetes: results of the STAR-LET study.

Science.gov (United States)

Bakris, George; Molitch, Mark; Zhou, Qian; Sarafidis, Pantelis; Champion, Annette; Bacher, Peter; Sowers, James R

2008-01-01

Reversal of new-onset diabetes secondary to thiazide diuretic use remains questionable. STAR-LET was a 6-month extension of the Study of Trandolapril/Verapamil SR and Insulin Resistance (STAR), which assessed the effects of a fixed-dose renin-angiotensin system inhibitor (RASI)/hydrochlorothiazide (HCTZ) combination on changes in 2-hour oral glucose tolerance test (OGTT) results. STAR-LET explored whether the glycemic impact of HCTZ could be reversed by conversion to a RASI/verapamil combination. The primary outcome was change in 2-hour OGTT results. Fifty-one percent of the STAR patients were enrolled in STAR-LET. The 2-hour OGTT value (mmol/L) was unchanged from STAR baseline in the RASI/verapamil group (7.7+/-2.4 vs 8.1+/-3.3; P=.18) and improved in those who were switched from RASI/HCTZ to RASI/verapamil (8.5+/-3.0 vs 7.2+/-2.3; P<.001). This exploratory study suggests that the impairment in glycemic control seen with use of a thiazide diuretic combined with a RASI can be reversed by switching to a regimen that does not include a diuretic.

The SAMHD1 dNTP Triphosphohydrolase Is Controlled by a Redox Switch.

Science.gov (United States)

Mauney, Christopher H; Rogers, LeAnn C; Harris, Reuben S; Daniel, Larry W; Devarie-Baez, Nelmi O; Wu, Hanzhi; Furdui, Cristina M; Poole, Leslie B; Perrino, Fred W; Hollis, Thomas

2017-12-01

Proliferative signaling involves reversible posttranslational oxidation of proteins. However, relatively few molecular targets of these modifications have been identified. We investigate the role of protein oxidation in regulation of SAMHD1 catalysis. Here we report that SAMHD1 is a major target for redox regulation of nucleotide metabolism and cell cycle control. SAMHD1 is a triphosphate hydrolase, whose function involves regulation of deoxynucleotide triphosphate pools. We demonstrate that the redox state of SAMHD1 regulates its catalytic activity. We have identified three cysteine residues that constitute an intrachain disulfide bond "redox switch" that reversibly inhibits protein tetramerization and catalysis. We show that proliferative signals lead to SAMHD1 oxidation in cells and oxidized SAMHD1 is localized outside of the nucleus. Innovation and Conclusions: SAMHD1 catalytic activity is reversibly regulated by protein oxidation. These data identify a previously unknown mechanism for regulation of nucleotide metabolism by SAMHD1. Antioxid. Redox Signal. 27, 1317-1331.

The combination of positive and negative feedback loops confers exquisite flexibility to biochemical switches

International Nuclear Information System (INIS)

Pfeuty, Benjamin; Kaneko, Kunihiko

2009-01-01

A wide range of cellular processes require molecular regulatory pathways to convert a graded signal into a discrete response. One prevalent switching mechanism relies on the coexistence of two stable states (bistability) caused by positive feedback regulations. Intriguingly, positive feedback is often supplemented with negative feedback, raising the question of whether and how these two types of feedback can cooperate to control discrete cellular responses. To address this issue, we formulate a canonical model of a protein–protein interaction network and analyze the dynamics of a prototypical two-component circuit. The appropriate combination of negative and positive feedback loops can bring a bistable circuit close to the oscillatory regime. Notably, sharply activated negative feedback can give rise to a bistable regime wherein two stable fixed points coexist and may collide pairwise with two saddle points. This specific type of bistability is found to allow for separate and flexible control of switch-on and switch-off events, for example (i) to combine fast and reversible transitions, (ii) to enable transient switching responses and (iii) to display tunable noise-induced transition rates. Finally, we discuss the relevance of such bistable switching behavior, and the circuit topologies considered, to specific biological processes such as adaptive metabolic responses, stochastic fate decisions and cell-cycle transitions. Taken together, our results suggest an efficient mechanism by which positive and negative feedback loops cooperate to drive the flexible and multifaceted switching behaviors arising in biological systems

Reversal of an Epigenetic Switch Governing Cell Chaining in Bacillus subtilis by Protein Instability

Science.gov (United States)

Chai, Yunrong; Kolter, Roberto; Losick, Richard

2010-01-01

Bacillus subtilis forms long chains of cells during growth and biofilm formation. Cell separation is mediated by autolysins, whose genes are under the negative control of a heteromeric complex composed of the proteins SinR and SlrR. Formation of the SinR•SlrR complex is governed by a self-reinforcing, double-negative feedback loop in which SinR represses the gene for SlrR and SlrR, by forming the SinR•SlrR complex, titrates SinR and prevents it from repressing slrR. The loop is a bistable switch and exists in a SlrRLOW state in which autolysin genes are on, and a SlrRHIGH state in which autolysin genes are repressed by SinR•SlrR. Cells in the SlrRLOW state are driven into the SlrRHIGH state by SinI, an antirepressor that binds to and inhibits SinR. However, the mechanism by which cells in the SlrRHIGH state revert back to the SlrRLOW state is unknown. We report that SlrR is proteolytically unstable and present evidence that self-cleavage via a LexA-like autopeptidase and ClpC contribute to its degradation. Cells producing a self-cleavage-resistant mutant of SlrR exhibited more persistent chaining during growth and yielded biofilms with enhanced structural complexity. We propose that degradation of SlrR allows cells to switch from the SlrRHIGH to the SlrRLOW state. PMID:20923420

Molecular Switch for Sub-Diffraction Laser Lithography by Photoenol Intermediate-State Cis-Trans Isomerization.

Science.gov (United States)

Mueller, Patrick; Zieger, Markus M; Richter, Benjamin; Quick, Alexander S; Fischer, Joachim; Mueller, Jonathan B; Zhou, Lu; Nienhaus, Gerd Ulrich; Bastmeyer, Martin; Barner-Kowollik, Christopher; Wegener, Martin

2017-06-27

Recent developments in stimulated-emission depletion (STED) microscopy have led to a step change in the achievable resolution and allowed breaking the diffraction limit by large factors. The core principle is based on a reversible molecular switch, allowing for light-triggered activation and deactivation in combination with a laser focus that incorporates a point or line of zero intensity. In the past years, the concept has been transferred from microscopy to maskless laser lithography, namely direct laser writing (DLW), in order to overcome the diffraction limit for optical lithography. Herein, we propose and experimentally introduce a system that realizes such a molecular switch for lithography. Specifically, the population of intermediate-state photoenol isomers of α-methyl benzaldehydes generated by two-photon absorption at 700 nm fundamental wavelength can be reversibly depleted by simultaneous irradiation at 440 nm, suppressing the subsequent Diels-Alder cycloaddition reaction which constitutes the chemical core of the writing process. We demonstrate the potential of the proposed mechanism for STED-inspired DLW by covalently functionalizing the surface of glass substrates via the photoenol-driven STED-inspired process exploiting reversible photoenol activation with a polymerization initiator. Subsequently, macromolecules are grown from the functionalized areas and the spatially coded glass slides are characterized by atomic-force microscopy. Our approach allows lines with a full-width-at-half-maximum of down to 60 nm and line gratings with a lateral resolution of 100 nm to be written, both surpassing the diffraction limit.

Magnetization reversal dynamics in exchange-coupled NiO - Co bilayers

International Nuclear Information System (INIS)

Camarero, J.; Pennec, Y.; Bonfim, M.; Vogel, J.; Pizzini, S.; Fontaine, A.; Cartier, M.; Fettar, F.; Dieny, B.

2001-01-01

We performed a detailed study of the magnetization reversal in polycrystalline exchange-coupled NiO/Co bilayers over 10 decades of field sweep rate dH/dt for different NiO and Co thicknesses. For all sweep rates and thicknesses, the symmetry of the hysteresis loops shows that an identical pinning strength has to be overcome in both directions of the reversal. At low dH/dt the reversal is governed by domain wall displacement while domain nucleation is dominant at higher ones. The dH/dt at which the transition between the two regimes takes place depends on the relative thickness of the NiO and Co layers. It increases (decreases) when the Co (NiO) thickness is increased. Experimentally, it was found that the energy barrier varies linearly with the square root of the area corresponding to the activation (Barkhausen) volume which is consistent with a random walk model of the coupling between antiferromagnetic and ferromagnetic layers. The results can be explained in terms of a thermally activated switching of the NiO magnetization dragged by the Co reversal. [copyright] 2001 American Institute of Physics

Dynamic Behavior of Reverse Flow Reactor for Lean Methane Combustion

OpenAIRE

Yogi W. Budhi; M. Effendy; Yazid Bindar; Subagjo

2014-01-01

The stability of reactor operation for catalytic oxidation of lean CH4 has been investigated through modeling and simulation, particularly the influence of switching time and heat extraction on reverse flow reactor (RFR) performance. A mathematical model of the RFR was developed, based on one-dimensional pseudo-homogeneous model for mass and heat balances, incorporating heat loss through the reactor wall. The configuration of the RFR consisted of inert-catalyst-inert, with or without heat ext...

Demonstration of Ultra-Fast Switching in Nano metallic Resistive Switching Memory Devices

International Nuclear Information System (INIS)

Yang, Y.

2016-01-01

Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nano metallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nano metallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.

Action-Effect Associations in Voluntary and Cued Task-Switching

Science.gov (United States)

Sommer, Angelika; Lukas, Sarah

2018-01-01

The literature of action control claims that humans control their actions in two ways. In the stimulus-based approach, actions are triggered by external stimuli. In the ideomotor approach, actions are elicited endogenously and controlled by the intended goal. In the current study, our purpose was to investigate whether these two action control modes affect task-switching differently. We combined a classical task-switching paradigm with action-effect learning. Both experiments consisted of two experimental phases: an acquisition phase, in which associations between task, response and subsequent action effects were learned and a test phase, in which the effects of these associations were tested on task performance by presenting the former action effects as preceding effects, prior to the task (called practiced effects). Subjects either chose freely between tasks (ideomotor action control mode) or they were cued as to which task to perform (sensorimotor action control mode). We aimed to replicate the consistency effect (i.e., task is chosen according to the practiced task-effect association) and non-reversal advantage (i.e., better task performance when the practiced effect matches the previously learned task-effect association). Our results suggest that participants acquired stable action-effect associations independently of the learning mode. The consistency effect (Experiment 1) could be shown, independent of the learning mode, but only on the response-level. The non-reversal advantage (Experiment 2) was only evident in the error rates and only for participants who had practiced in the ideomotor action control mode. PMID:29387027

Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

CERN Document Server

Bertolucci, Ennio; Mettivier, G; Russo, P; Bisogni, M G; Bottigli, U; Fantacci, M E; Stefanini, A; Cola, A; Quaranta, F; Vasanelli, L; Stefanini, G

1999-01-01

Semi-Insulating Gallium Arsenide (SI-GaAs) devices have been tested for radiation hardness with 3-4 MeV or 24 GeV proton beams. These devices can be operated in dc mode as optically activated electrical switches up to 1 kV. Both single switches (vertical Schottky diodes) and multiple (8) switches (planar devices) have been studied, by analyzing their current-voltage (I-V) reverse characteristics in the dark and under red light illumination, both before and after irradiation. We propose to use them in the system of high-voltage (-600 V) switches for the microstrip gas chambers for the CMS experiment at CERN. Low energy protons (3-4 MeV) were used in order to produce a surface damage below the Schottky contact: their fluence (up to 2.6*10/sup 15/ p/cm/sup 2/) gives a high-dose irradiation. The high energy proton irradiation (energy: 24 GeV, fluence: 1.1*10/sup 14/ p/cm/sup 2/) reproduced a ten years long proton exposure of the devices in CMS experiment conditions. For low energy irradiation, limited changes of ...

DESAIN DAN IMPLEMENTSI SOFT SWITCHING BOOST KONVERTER DENGAN SIMPLE AUXILLARY RESONANT SWITCH (SARC

Directory of Open Access Journals (Sweden)

Dimas Bagus Saputra

2017-01-01

Full Text Available Boost konverter merupakan penaik tegangan DC ke tegangan DC yang mempunyai tegangan output yang lebih tinggi dibanding inputnya. Penggunaan boost konverter diera modern semakin meningkat dan dibuat dengan dimensi yang lebih kecil, berat yang lebih ringan dan efisiensi yang lebih tinggi dibanding dengan boost konverter generasi terdahulu. Tetapi rugi-rugi periodik saat on/off meningkat. Untuk meraih kriteria tersebut, teknik hard switching boost konverter berevolusi menjadi teknik soft switching dengan menambah rangkaian simple auxiliary resonant circuit (SARC. Karena penambahan rangkaian SARC tersebut konverter bekerja pada kondisi zero-voltage switching switch (ZVS dan zero current switch (ZCS, sehingga saklar semikonduktor tidak bekerja secara hard switching lagi. Pada penelitian ini akan di desain dan diimplementaskan soft switching boost konverter dengan SARC. Kelebihan dari soft switching boost konverter dengan SARC adalah mempunyai efisiensi yang lebih tinggi dibanding dengan boost konverter konventional. Dari hasil implementasi menunjukkan konverter yang diajukan telah meraih zero voltage switch (ZVS. Sehingga boost konverter zero voltage switch (ZVS bisa diaplikasikan pada sistem power suplay yang membutuhkan efisiensi energi yang tinggi terutama pada daya yang tinggi.

Generation of an activating Zn(2+) switch in the dopamine transporter

DEFF Research Database (Denmark)

Loland, Claus Juul; Norregaard, Lene; Litman, Thomas

2002-01-01

Binding of Zn(2+) to the endogenous Zn(2+) binding site in the human dopamine transporter leads to potent inhibition of [(3)H]dopamine uptake. Here we show that mutation of an intracellular tyrosine to alanine (Y335A) converts this inhibitory Zn(2+) switch into an activating Zn(2+) switch, allowing...... Zn(2+)-dependent activation of the transporter. The tyrosine is part of a conserved YXX Phi trafficking motif (X is any residue and Phi is a residue with a bulky hydrophobic group), but Y335A did not show alterations in surface targeting or protein kinase C-mediated internalization. Despite wild...... for several substrates was increased. However, the presence of Zn(2+) in micromolar concentrations increased the V(max) up to 24-fold and partially restored the apparent affinities. The capability of Zn(2+) to restore transport is consistent with a reversible, constitutive shift in the distribution...

Soft switching resonant converter with duty-cycle control in DC micro-grid system

Science.gov (United States)

Lin, Bor-Ren

2018-01-01

Resonant converter has been widely used for the benefits of low switching losses and high circuit efficiency. However, the wide frequency variation is the main drawback of resonant converter. This paper studies a new modular resonant converter with duty-cycle control to overcome this problem and realise the advantages of low switching losses, no reverse recovery current loss, balance input split voltages and constant frequency operation for medium voltage direct currentgrid or system network. Series full-bridge (FB) converters are used in the studied circuit in order to reduce the voltage stresses and power rating on power semiconductors. Flying capacitor is used between two FB converters to balance input split voltages. Two circuit modules are paralleled on the secondary side to lessen the current rating of rectifier diodes and the size of magnetic components. The resonant tank is operated at inductive load circuit to help power switches to be turned on at zero voltage with wide load range. The pulse-width modulation scheme is used to regulate output voltage. Experimental verifications are provided to show the performance of the proposed circuit.

Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics

Science.gov (United States)

Chen, Zibin; Hong, Liang; Wang, Feifei; An, Xianghai; Wang, Xiaolin; Ringer, Simon; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

2017-12-01

Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. Here, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb (Mg1 /3Nb2 /3)O3-33 % PbTiO3 single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications.

The nanocoherer: an electrically and mechanically resettable resistive switching device based on gold clusters assembled on paper

Science.gov (United States)

Minnai, Chloé; Mirigliano, Matteo; Brown, Simon A.; Milani, Paolo

2018-03-01

We report the realization of a resettable resistive switching device based on a nanostructured film fabricated by supersonic cluster beam deposition of gold clusters on plain paper substrates. Through the application of suitable voltage ramps, we obtain, in the same device, either a complex pattern of resistive switchings, or reproducible and stable switchings between low resistance and high resistance states, with an amplitude up to five orders of magnitude. Our device retains a state of internal resistance following the history of the applied voltage similar to that reported for memristors. The two different switching regimes in the same device are both stable, the transition between them is reversible, and it can be controlled by applying voltage ramps or by mechanical deformation of the substrate. The device behavior can be related to the formation, growth and breaking of junctions between the loosely aggregated gold clusters forming the nanostructured films. The fact that our cluster-assembled device is mechanically resettable suggests that it can be considered as the analog of the coherer: a switching device based on metallic powders used for the first radio communication system.

Electrothermally Driven Fluorescence Switching by Liquid Crystal Elastomers Based On Dimensional Photonic Crystals.

Science.gov (United States)

Lin, Changxu; Jiang, Yin; Tao, Cheng-An; Yin, Xianpeng; Lan, Yue; Wang, Chen; Wang, Shiqiang; Liu, Xiangyang; Li, Guangtao

2017-04-05

In this article, the fabrication of an active organic-inorganic one-dimensional photonic crystal structure to offer electrothermal fluorescence switching is described. The film is obtained by spin-coating of liquid crystal elastomers (LCEs) and TiO 2 nanoparticles alternatively. By utilizing the property of LCEs that can change their size and shape reversibly under external thermal stimulations, the λ max of the photonic band gap of these films is tuned by voltage through electrothermal conversion. The shifted photonic band gap further changes the matching degree between the photonic band gap of the film and the emission spectrum of organic dye mounting on the film. With rhodamine B as an example, the enhancement factor of its fluorescence emission is controlled by varying the matching degree. Thus, the fluorescence intensity is actively switched by voltage applied on the system, in a fast, adjustable, and reversible manner. The control chain of using the electrothermal stimulus to adjust fluorescence intensity via controlling the photonic band gap is proved by a scanning electron microscope (SEM) and UV-vis reflectance. This mechanism also corresponded to the results from the finite-difference time-domain (FDTD) simulation. The comprehensive usage of photonic crystals and liquid crystal elastomers opened a new possibility for active optical devices.

Saturated Switching Systems

CERN Document Server

Benzaouia, Abdellah

2012-01-01

Saturated Switching Systems treats the problem of actuator saturation, inherent in all dynamical systems by using two approaches: positive invariance in which the controller is designed to work within a region of non-saturating linear behaviour; and saturation technique which allows saturation but guarantees asymptotic stability. The results obtained are extended from the linear systems in which they were first developed to switching systems with uncertainties, 2D switching systems, switching systems with Markovian jumping and switching systems of the Takagi-Sugeno type. The text represents a thoroughly referenced distillation of results obtained in this field during the last decade. The selected tool for analysis and design of stabilizing controllers is based on multiple Lyapunov functions and linear matrix inequalities. All the results are illustrated with numerical examples and figures many of them being modelled using MATLAB®. Saturated Switching Systems will be of interest to academic researchers in con...

A 13.56 MHz CMOS Active Rectifier With Switched-Offset and Compensated Biasing for Biomedical Wireless Power Transfer Systems.

Science.gov (United States)

Yan Lu; Wing-Hung Ki

2014-06-01

A full-wave active rectifier switching at 13.56 MHz with compensated bias current for a wide input range for wirelessly powered high-current biomedical implants is presented. The four diodes of a conventional passive rectifier are replaced by two cross-coupled PMOS transistors and two comparator- controlled NMOS switches to eliminate diode voltage drops such that high voltage conversion ratio and power conversion efficiency could be achieved even at low AC input amplitude |VAC|. The comparators are implemented with switched-offset biasing to compensate for the delays of active diodes and to eliminate multiple pulsing and reverse current. The proposed rectifier uses a modified CMOS peaking current source with bias current that is quasi-inversely proportional to the supply voltage to better control the reverse current over a wide AC input range (1.5 to 4 V). The rectifier was fabricated in a standard 0.35 μm CMOS N-well process with active area of 0.0651 mm(2). For the proposed rectifier measured at |VAC| = 3.0 V, the voltage conversion ratios are 0.89 and 0.93 for RL=500 Ω and 5 kΩ, respectively, and the measured power conversion efficiencies are 82.2% to 90.1% with |VAC| ranges from 1.5 to 4 V for RL=500 Ω.

Conflict monitoring and adjustment in the task-switching paradigm under different memory load conditions: an ERP/sLORETA analysis.

Science.gov (United States)

Deng, Yuqin; Wang, Yan; Ding, Xiaoqian; Tang, Yi-Yuan

2015-02-11

The aim of the present study was to examine electrophysiological and behavioral changes caused by different memory loads in a task-switching paradigm. A total of 31 healthy individuals were subjected to a task, in which the stimulus-response reversal paradigm was combined with the task-switching paradigm. The event-related potentials were recorded and the N2 component, an index of conflict processing, was measured. In addition, the neural sources of N2 were further analyzed by standardized low-resolution brain electromagnetic tomography. The event-related potential results showed that high memory load triggered a higher N2 mean amplitude. Moreover, the standardized low-resolution brain electromagnetic tomography data showed that high memory load caused an increase in current densities at the anterior cingulate cortex and the prefrontal cortex in the task-switching paradigm. In summary, our findings provide electrophysiological evidence to interpret possible influences of memory loads on conflict monitoring and modulation during the task switching. These results imply that the working memory load overrules the influence of task-switching performance on the intensification of cognitive control.

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Science.gov (United States)

Cai, Kaiming; Yang, Meiyin; Ju, Hailang; Wang, Sumei; Ji, Yang; Li, Baohe; Edmonds, Kevin William; Sheng, Yu; Zhang, Bao; Zhang, Nan; Liu, Shuai; Zheng, Houzhi; Wang, Kaiyou

2017-07-01

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations and micromagnetic simulations.

Urea-assisted synthesis of AlPO4:Ce,Tb nanorods as a redox luminescence switch

International Nuclear Information System (INIS)

Yang, Wei; Hu, Juncheng

2013-01-01

AlPO 4 :Ce,Tb nanorods were synthesized by a facile hydrothermal method. The morphology of rod-like AlPO 4 was tuned by varying urea concentrations, AlPO 4 gradually changed from nanosheets to nanorods, and urea provided hydroxyl anion (OH − ) in the aqueous solution to prepare the dispersed nanorods under the hydrothermal conditions. The emission intensity of nanorods increased significantly compared to that of nanosheets. AlPO 4 :Ce,Tb nanorods provided a novel redox luminescence switch on the basis of the reversible switching of the Ce 3+ /Ce 4+ redox couple. The luminescence is quenched (off) when the system is in the oxidized form while it is restored (on) in the reduced form. The mechanism of the energy transfer and electronic transition between Ce 3+ and Tb 3+ in the AlPO 4 nanorods was also discussed. This switch has biocompatibility and low toxicity, and may have a potential application in biomedical diagnostics and analysis

Reverse engineering of an affinity-switchable molecular interaction characterized by atomic force microscopy single-molecule force spectroscopy.

Science.gov (United States)

Anselmetti, Dario; Bartels, Frank Wilco; Becker, Anke; Decker, Björn; Eckel, Rainer; McIntosh, Matthew; Mattay, Jochen; Plattner, Patrik; Ros, Robert; Schäfer, Christian; Sewald, Norbert

2008-02-19

Tunable and switchable interaction between molecules is a key for regulation and control of cellular processes. The translation of the underlying physicochemical principles to synthetic and switchable functional entities and molecules that can mimic the corresponding molecular functions is called reverse molecular engineering. We quantitatively investigated autoinducer-regulated DNA-protein interaction in bacterial gene regulation processes with single atomic force microscopy (AFM) molecule force spectroscopy in vitro, and developed an artificial bistable molecular host-guest system that can be controlled and regulated by external signals (UV light exposure and thermal energy). The intermolecular binding functionality (affinity) and its reproducible and reversible switching has been proven by AFM force spectroscopy at the single-molecule level. This affinity-tunable optomechanical switch will allow novel applications with respect to molecular manipulation, nanoscale rewritable molecular memories, and/or artificial ion channels, which will serve for the controlled transport and release of ions and neutral compounds in the future.

Conductive polymer switch for controlling superconductivity

International Nuclear Information System (INIS)

McDevitt, J.T.; Haupt, S.G.; Riley, D.R.; Zhao, J.; Grassi, J.; Lo, K.; Jones, C.

1994-01-01

The preparation of a hybrid conducting polymer/high-temperature superconductor device consisting of a polypyrrole coated YBa 2 Cu 3 O 7-σ microbridge is reported. Electrochemical techniques are exploited to alter the oxidation state of the polymer and, in doing so, it is found for the first time that superconductivity can be modulated in a controllable and reproducible fashion by a polymer layout. Whereas the neutral (insulating) polypyrrole only slightly influences the electrical properties of the underlying YBa 2 Cu 3 O 7-σ film, the oxidized (conductive) polymer depresses T c by up to 50K. In a similar fashion, the oxidation state of the polymer is found to reversibly modulate the magnitude of J c , the superconducting critical current. Thus, a new type of molecule switch for controlling superconductivity is demonstrated

Photoinduced critical opalescence and reversible all-optical switching in photosensitive liquid crystals

International Nuclear Information System (INIS)

Tabiryan, Nelson V.; Serak, Svetlana V.; Grozhik, Vladimir A.

2003-01-01

We present the results of a study of the critical opalescence that is observed as a result of reversible trans-cis photoisomerization in the vicinity of photoinduced isothermal phase transitions in azobenzene liquid crystals (azo LCs). The opalescence is caused by the generation of randomly oriented microdomains and microdroplets of isotropic phase in the illuminated area of the azo LC. Transformations between the strongly light-scattering nematic phase and the transparent isotropic phase of the azo LC are induced all-optically by combination of green (λ=532 nm) and violet (λ=409 nm) laser beams

Photoinduced critical opalescence and reversible all-optical switching in photosensitive liquid crystals

Science.gov (United States)

Tabiryan, Nelson V.; Serak, Svetlana V.; Grozhik, Vladimir A.

2003-03-01

We present the results of a study of the critical opalescence that is observed as a result of reversible trans-cis photoisomerization in the vicinity of photoinduced isothermal phase transitions in azobenzene liquid crystals (azo LCs). The opalescence is caused by the generation of randomly oriented microdomains and microdroplets of isotropic phase in the illuminated area of the azo LC. Transformations between the strongly light-scattering nematic phase and the transparent isotropic phase of the azo LC are induced all-optically by combination of green (λ=532 nm) and violet (λ=409 nm) laser beams.

Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

Science.gov (United States)

Cooper, James A.

1986-01-01

A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

Transverse field-induced nucleation pad switching modes during domain wall injection

Energy Technology Data Exchange (ETDEWEB)

Bryan, M. T.; Fry, P. W.; Schrefl, T.; Gibbs, M. R. J.; Allwood, D. A.; Im, M.-Y.; Fischer, P.

2010-03-12

We have used magnetic transmission X-ray microscopy (M-TXM) to image in-field magnetization configurations of patterned Ni{sub 80}Fe{sub 20} domain wall 'injection pads' and attached planar nanowires. Comparison with micromagnetic simulations suggests that the evolution of magnetic domains in rectangular injection pads depends on the relative orientation of closure domains in the remanent state. The magnetization reversal pathway is also altered by the inclusion of transverse magnetic fields. These different modes explain previous results of domain wall injection into nanowires. Even more striking was the observation of domain walls injecting halfway across the width of wider (>400 nm wide) wires but over wire lengths of several micrometers. These extended Neel walls can interact with adjacent nanowires and cause a switching in the side of the wire undergoing reversal as the domain wall continues to expand.

Magnetisation switching in a ferromagnetic Heisenberg nanoparticle with uniaxial anisotropy: a Monte Carlo investigation

International Nuclear Information System (INIS)

Ledue, D.; Berche, P.E.; Patte, R.

2004-01-01

We investigate the thermal-activated magnetisation reversal in a single ferromagnetic nanoparticle with uniaxial anisotropy using Monte Carlo simulations. The aim of this work is to reproduce the reversal magnetisation by uniform rotation at very low temperature in the high-energy barrier hypothesis, that is to realize the Neel-Brown model. For this purpose we have considered a simple cubic nanoparticle where each site is occupied by a classical Heisenberg spin. The Hamiltonian is the sum of an exchange interaction term, a single-ion anisotropy term and a Zeeman interaction term. Our numerical data of the thermal variation of the switching field are compared to an approximated expression and previous experimental results on Co nanoparticles

Switched capacitor DC-DC converter with switch conductance modulation and Pesudo-fixed frequency control

DEFF Research Database (Denmark)

Larsen, Dennis Øland; Vinter, Martin; Jørgensen, Ivan Harald Holger

A switched capacitor dc-dc converter with frequency-planned control is presented. By splitting the output stage switches in eight segments the output voltage can be regulated with a combination of switching frequency and switch conductance. This allows for switching at predetermined frequencies, 31...

Investigation of resistive switching in barium strontium titanate thin films for memory applications

Energy Technology Data Exchange (ETDEWEB)

Shen, Wan

2010-11-17

Resistive random access memory (RRAM) has attracted much attention due to its low power consumption, high speed operation, non-readout disturbance and high density integration potential and is regarded as one of the most promising candidates for the next generation non-volatile memory. The resistive switching behavior of Mn-doped BaSrTiO{sub 3} (BST) thin films with different crystalline properties was investigated within this dissertation. The laser fluence dependence was checked in order to optimize the RRAM properties. Although the film epitaxial quality was improved by reducing the laser energy during deposition process, the yields fluctuated and only 3% RRAM devices with highest epitaxial quality of BST film shows resistive switching behavior instead of 67% for the samples with worse film quality. It gives a clue that the best thin film quality does not result in the best switching performance, and it is a clear evidence of the importance of the defects to obtain resistive switching phenomena. The bipolar resistive switching behavior was studied with epitaxial BST thin films on SRO/STO. Compared to Pt top electrode, the yield, endurance and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop of the resistance for both high and low resistance states, the devices with W top electrode can be switched for 10{sup 4} times without any obvious degradation. The resistance degradation for devices with Pt top electrode may result from the diffusion of oxygen along the Pt grain boundaries during cycling whereas for W top electrode the reversible oxidation and reduction of a WO{sub x} layer, present at the interface between W top electrode and BST film, attributes to the improved switching property. The transition from bipolar to unipolar resistive switching in polycrystalline BST thin films was observed. A forming process which induces a metallic low resistance state is prerequisite for the

Investigation of resistive switching in barium strontium titanate thin films for memory applications

International Nuclear Information System (INIS)

Shen, Wan

2010-01-01

Resistive random access memory (RRAM) has attracted much attention due to its low power consumption, high speed operation, non-readout disturbance and high density integration potential and is regarded as one of the most promising candidates for the next generation non-volatile memory. The resistive switching behavior of Mn-doped BaSrTiO 3 (BST) thin films with different crystalline properties was investigated within this dissertation. The laser fluence dependence was checked in order to optimize the RRAM properties. Although the film epitaxial quality was improved by reducing the laser energy during deposition process, the yields fluctuated and only 3% RRAM devices with highest epitaxial quality of BST film shows resistive switching behavior instead of 67% for the samples with worse film quality. It gives a clue that the best thin film quality does not result in the best switching performance, and it is a clear evidence of the importance of the defects to obtain resistive switching phenomena. The bipolar resistive switching behavior was studied with epitaxial BST thin films on SRO/STO. Compared to Pt top electrode, the yield, endurance and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop of the resistance for both high and low resistance states, the devices with W top electrode can be switched for 10 4 times without any obvious degradation. The resistance degradation for devices with Pt top electrode may result from the diffusion of oxygen along the Pt grain boundaries during cycling whereas for W top electrode the reversible oxidation and reduction of a WO x layer, present at the interface between W top electrode and BST film, attributes to the improved switching property. The transition from bipolar to unipolar resistive switching in polycrystalline BST thin films was observed. A forming process which induces a metallic low resistance state is prerequisite for the observation of

Switching "on" and "off" the adhesion in stimuli-responsive elastomers.

Science.gov (United States)

Kaiser, S; Radl, S V; Manhart, J; Ayalur-Karunakaran, S; Griesser, T; Moser, A; Ganser, C; Teichert, C; Kern, W; Schlögl, S

2018-03-28

The present work aims at the preparation of dry adhesives with switchable bonding properties by using the reversible nature of the [4πs+4πs] cycloaddition of anthracenes. Photo-responsive hydrogenated carboxylated nitrile butadiene rubber with photo-responsive pendant anthracene groups is prepared by one-pot synthesis. The formation of 3D networks relies on the photodimerization of the anthracene moieties upon UV exposure (λ > 300 nm). Controlled cleavage of the crosslink sites is achieved by either deep UV exposure (λ = 254 nm) or thermal dissociation at 70 °C. The kinetics of the optical and thermal cleavage routes are compared in thin films using UV-vis spectroscopy and their influence on the reversibility of the network is detailed. Going from thin films to free standing samples the modulation of the network structure and thermo-mechanical properties over repeated crosslinking and cleavage cycles are characterized by low-field NMR spectroscopy and dynamic mechanical analysis. The applicability of the stimuli-responsive networks as adhesives with reversible bonding properties is demonstrated. The results evidence that the reversibility of the crosslinking reaction enables a controlled switching "on" and "off" of adhesion properties. The recovery of the adhesion force amounts to 75 and 80% for photo- and thermal dissociation, respectively. Spatial control of adhesion properties is evidenced by adhesion force mapping experiments of photo-patterned films.

Effective switching frequency multiplier inverter

Science.gov (United States)

Su, Gui-Jia [Oak Ridge, TN; Peng, Fang Z [Okemos, MI

2007-08-07

A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

Instability in time-delayed switched systems induced by fast and random switching

Science.gov (United States)

Guo, Yao; Lin, Wei; Chen, Yuming; Wu, Jianhong

2017-07-01

In this paper, we consider a switched system comprising finitely or infinitely many subsystems described by linear time-delayed differential equations and a rule that orchestrates the system switching randomly among these subsystems, where the switching times are also randomly chosen. We first construct a counterintuitive example where even though all the time-delayed subsystems are exponentially stable, the behaviors of the randomly switched system change from stable dynamics to unstable dynamics with a decrease of the dwell time. Then by using the theories of stochastic processes and delay differential equations, we present a general result on when this fast and random switching induced instability should occur and we extend this to the case of nonlinear time-delayed switched systems as well.

Latching micro optical switch

Science.gov (United States)

Garcia, Ernest J; Polosky, Marc A

2013-05-21

An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

Temporal Dynamics of Task Switching and Abstract-Concept Learning in Pigeons

Directory of Open Access Journals (Sweden)

Thomas Alexander Daniel

2015-09-01

Full Text Available The current study examined whether pigeons could learn to use abstract concepts as the basis for conditionally switching behavior as a function of time. Using a mid-session reversal task, experienced pigeons were trained to switch from matching-to-sample (MTS to non-matching-to-sample (NMTS conditional discriminations within a session. One group had prior training with MTS, while the other had prior training with NMTS. Over training, stimulus set size was progressively doubled from 3 to 6 to 12 stimuli to promote abstract concept development. Prior experience had an effect on the initial learning at each of the set sizes but by the end of training there were no group differences, as both groups showed similar within-session linear matching functions. After acquiring the 12-item set, abstract-concept learning was tested by placing novel stimuli at the beginning and end of a test session. Prior matching and non-matching experience affected transfer behavior. The matching experienced group transferred to novel stimuli in both the matching and non-matching portion of the sessions using a matching rule. The non-matching experienced group transferred to novel stimuli in both portions of the session using a non-matching rule. The representations used as the basis for mid-session reversal of the conditional discrimination behaviors and subsequent transfer behavior appears to have different temporal sources. The implications for the flexibility and organization of complex behaviors are considered.

Avalanche photoconductive switching

Science.gov (United States)

Pocha, M. D.; Druce, R. L.; Wilson, M. J.; Hofer, W. W.

This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV to 35 kV and rise times of 300 to 500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10(exp 3) to over 10(exp 5). Switches with two very different physical configurations and with two different illumination wavelengths (1.06 micrometer, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation.

Avalanche photoconductive switching

Energy Technology Data Exchange (ETDEWEB)

Pocha, M.D.; Druce, R.L.; Wilson, M.J.; Hofer, W.W.

1989-01-01

This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV--35 kV and rise times of 300--500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10{sup 3} to over 10{sup 5}. Switches with two very different physical configurations and with two different illumination wavelengths (1.06 {mu}m, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation. 3 refs., 6 figs.

Comparison of extended mean-reversion and time series models for electricity spot price simulation considering negative prices

International Nuclear Information System (INIS)

Keles, Dogan; Genoese, Massimo; Möst, Dominik; Fichtner, Wolf

2012-01-01

This paper evaluates different financial price and time series models, such as mean reversion, autoregressive moving average (ARMA), integrated ARMA (ARIMA) and general autoregressive conditional heteroscedasticity (GARCH) process, usually applied for electricity price simulations. However, as these models are developed to describe the stochastic behaviour of electricity prices, they are extended by a separate data treatment for the deterministic components (trend, daily, weekly and annual cycles) of electricity spot prices. Furthermore price jumps are considered and implemented within a regime-switching model. Since 2008 market design allows for negative prices at the European Energy Exchange, which also occurred for several hours in the last years. Up to now, only a few financial and time series approaches exist, which are able to capture negative prices. This paper presents a new approach incorporating negative prices. The evaluation of the different approaches presented points out that the mean reversion and the ARMA models deliver the lowest mean root square error between simulated and historical electricity spot prices gained from the European Energy Exchange. These models posses also lower mean average errors than GARCH models. Hence, they are more suitable to simulate well-fitting price paths. Furthermore it is shown that the daily structure of historical price curves is better captured applying ARMA or ARIMA processes instead of mean-reversion or GARCH models. Another important outcome of the paper is that the regime-switching approach and the consideration of negative prices via the new proposed approach lead to a significant improvement of the electricity price simulation. - Highlights: ► Considering negative prices improves the results of time-series and financial models for electricity prices. ► Regime-switching approach captures the jumps and base prices quite well. ► Removing and separate modelling of deterministic annual, weekly and daily

Reversal of olanzapine-induced weight gain in a patient with schizophrenia by switching to asenapine: a case report

Directory of Open Access Journals (Sweden)

Okazaki K

2017-11-01

Full Text Available Kosuke Okazaki, Kazuhiko Yamamuro, Toshifumi Kishimoto Department of Psychiatry, Nara Medical University School of Medicine, Kashihara, Japan Aims: Antipsychotics are effective for treating schizophrenia, but atypical antipsychotics can cause several adverse side effects including weight gain, hyperprolactinemia, and extrapyramidal symptoms. Moreover, weight gain increases the risk of metabolic diseases.Methods: We treated a case of olanzapine-induced weight gain in a 41-year-old man with schizophrenia by switching his medication from olanzapine to asenapine.Results: The weight gain improved after switching the medication, from 80.3 to 75.0 kg, a weight loss of 6.6%, and there was no significant worsening of psychological symptoms or other adverse effects.Conclusions: Asenapine might be effective for treating patients with schizophrenia who experience olanzapine-induced weight gain. Keywords: olanzapine, weight gain, schizophrenia, asenapine

160-Gb/s Silicon All-Optical Packet Switch for Buffer-less Optical Burst Switching

DEFF Research Database (Denmark)

Hu, Hao; Ji, Hua; Pu, Minhao

2015-01-01

We experimentally demonstrate a 160-Gb/s Ethernet packet switch using an 8.6-mm-long silicon nanowire for optical burst switching, based on cross phase modulation in silicon. One of the four packets at the bit rate of 160 Gb/s is switched by an optical control signal using a silicon based 1 × 1 all......-optical packet switch. Error free performance (BER silicon packet switch based optical burst switching, which might be desirable for high-speed interconnects within a short...

Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity

International Nuclear Information System (INIS)

Huang, H. B.; Hu, J. M.; Yang, T. N.; Chen, L. Q.; Ma, X. Q.

2014-01-01

Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.

Resistance switch employing a simple metal nanogap junction

International Nuclear Information System (INIS)

Naitoh, Yasuhisa; Horikawa, Masayo; Abe, Hidekazu; Shimizu, Tetsuo

2006-01-01

In recent years, several researchers have reported the occurrence of reversible resistance switching effects in simple metal nanogap junctions. A large negative resistance is observed in the I-V characteristics of such a junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, such a junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage

Respiratory infections and pneumonia: potential benefits of switching from smoking to vaping.

Science.gov (United States)

Campagna, Davide; Amaradio, Maria Domenica; Sands, Mark F; Polosa, Riccardo

2016-01-01

Abstaining from tobacco smoking is likely to lower the risk of respiratory infections and pneumonia. Unfortunately, quitting smoking is not easy. Electronic cigarettes (ECs) are emerging as an attractive long-term alternative nicotine source to conventional cigarettes and are being adopted by smokers who wish to reduce or quit cigarette consumption. Also, given that the propylene glycol in EC aerosols is a potent bactericidal agent, switching from smoking to regular vaping is likely to produce additional lung health benefits. Here, we critically address some of the concerns arising from regular EC use in relation to lung health, including respiratory infections and pneumonia. In conclusion, smokers who quit by switching to regular ECs use can reduce risk and reverse harm from tobacco smoking. Innovation in the e-vapour category is likely not only to further minimise residual health risks, but also to maximise health benefits.

Task Uncertainty Can Account for Mixing and Switch Costs in Task-Switching

Science.gov (United States)

Rennie, Jaime L.

2015-01-01

Cognitive control is required in situations that involve uncertainty or change, such as when resolving conflict, selecting responses and switching tasks. Recently, it has been suggested that cognitive control can be conceptualised as a mechanism which prioritises goal-relevant information to deal with uncertainty. This hypothesis has been supported using a paradigm that requires conflict resolution. In this study, we examine whether cognitive control during task switching is also consistent with this notion. We used information theory to quantify the level of uncertainty in different trial types during a cued task-switching paradigm. We test the hypothesis that differences in uncertainty between task repeat and task switch trials can account for typical behavioural effects in task-switching. Increasing uncertainty was associated with less efficient performance (i.e., slower and less accurate), particularly on switch trials and trials that afford little opportunity for advance preparation. Interestingly, both mixing and switch costs were associated with a common episodic control process. These results support the notion that cognitive control may be conceptualised as an information processor that serves to resolve uncertainty in the environment. PMID:26107646

Controllability of multi-agent systems with periodically switching topologies and switching leaders

Science.gov (United States)

Tian, Lingling; Zhao, Bin; Wang, Long

2018-05-01

This paper considers controllability of multi-agent systems with periodically switching topologies and switching leaders. The concept of m-periodic controllability is proposed, and a criterion for m-periodic controllability is established. The effect of the duration of subsystems on controllability is analysed by utilising a property of analytic functions. In addition, the influence of switching periods on controllability is investigated, and an algorithm is proposed to search for the fewest periods to ensure controllability. A necessary condition for m-periodic controllability is obtained from the perspective of eigenvectors of the subsystems' Laplacian matrices. For a system with switching leaders, it is proved that switching-leader controllability is equivalent to multiple-leader controllability. Furthermore, both the switching order and the tenure of agents being leaders have no effect on the controllability. Some examples are provided to illustrate the theoretical results.

The Organization of Behavior Over Time: Insights from Mid-Session Reversal.

Science.gov (United States)

Rayburn-Reeves, Rebecca M; Cook, Robert G

2016-01-01

What are the mechanisms by which behavior is organized sequentially over time? The recently developed mid-session reversal (MSR) task offers new insights into this fundamental question. The typical MSR task is arranged to have a single reversed discrimination occurring in a consistent location within each session and across sessions. In this task, we examine the relevance of time, reinforcement, and other factors as the switching cue in the sequential modulation of control in MSR. New analyses also highlight some of the potential mechanisms underlying this serially organized behavior. MSR provides new evidence and we offer some ideas about how cues interact to compete for the control of behavior within and across sessions. We suggest that MSR is an excellent preparation for studying the competition among psychological states and their resolution toward action.

Local Peltier-effect-induced reversible metal–insulator transition in VO2 nanowires

International Nuclear Information System (INIS)

Takami, Hidefumi; Kanki, Teruo; Tanaka, Hidekazu

2016-01-01

We report anomalous resistance leaps and drops in VO 2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO 2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

Reversible Redox Activity by Ion-pH Dually Modulated Duplex Formation of i-Motif DNA with Complementary G-DNA

Directory of Open Access Journals (Sweden)

Soyoung Chang

2018-04-01

Full Text Available The unique biological features of supramolecular DNA have led to an increasing interest in biomedical applications such as biosensors. We have developed an i-motif and G-rich DNA conjugated single-walled carbon nanotube hybrid materials, which shows reversible conformational switching upon external stimuli such as pH (5 and 8 and presence of ions (Li+ and K+. We observed reversible electrochemical redox activity upon external stimuli in a quick and robust manner. Given the ease and the robustness of this method, we believe that pH- and ion-driven reversible DNA structure transformations will be utilized for future applications for developing novel biosensors.

Optimal switching using coherent control

DEFF Research Database (Denmark)

Kristensen, Philip Trøst; Heuck, Mikkel; Mørk, Jesper

2013-01-01

that the switching time, in general, is not limited by the cavity lifetime. Therefore, the total energy required for switching is a more relevant figure of merit than the switching speed, and for a particular two-pulse switching scheme we use calculus of variations to optimize the switching in terms of input energy....

Size dependence of spin-torque induced magnetic switching in CoFeB-based perpendicular magnetization tunnel junctions (invited)

Science.gov (United States)

Sun, J. Z.; Trouilloud, P. L.; Gajek, M. J.; Nowak, J.; Robertazzi, R. P.; Hu, G.; Abraham, D. W.; Gaidis, M. C.; Brown, S. L.; O'Sullivan, E. J.; Gallagher, W. J.; Worledge, D. C.

2012-04-01

CoFeB-based magnetic tunnel junctions with perpendicular magnetic anisotropy are used as a model system for studies of size dependence in spin-torque-induced magnetic switching. For integrated solid-state memory applications, it is important to understand the magnetic and electrical characteristics of these magnetic tunnel junctions as they scale with tunnel junction size. Size-dependent magnetic anisotropy energy, switching voltage, apparent damping, and anisotropy field are systematically compared for devices with different materials and fabrication treatments. Results reveal the presence of sub-volume thermal fluctuation and reversal, with a characteristic length-scale of the order of approximately 40 nm, depending on the strength of the perpendicular magnetic anisotropy and exchange stiffness. To have the best spin-torque switching efficiency and best stability against thermal activation, it is desirable to optimize the perpendicular anisotropy strength with the junction size for intended use. It also is important to ensure strong exchange-stiffness across the magnetic thin film. These combine to give an exchange length that is comparable or larger than the lateral device size for efficient spin-torque switching.

The differential involvement of the prelimbic and infralimbic cortices in response conflict affects behavioral flexibility in rats trained in a new automated strategy-switching task.

Science.gov (United States)

Oualian, Catherine; Gisquet-Verrier, Pascale

2010-12-01

To assess the role of the prelimbic (PL) and infralimbic (IL) cortices in mediating strategy switching, rats were trained in a new automated task in a Y-maze allowing a careful analysis of rats' behavior. In this situation, rats can only use two egocentric (Right, Left) and two visual (Light, Dark) strategies. In the first experiment, rats with PL, IL, or PL/IL lesions were compared with sham-operated rats when trained to reach a criterion of 10 consecutive correct responses with a light strategy before being trained with a response strategy (rule shifting), and finally with the reversed response strategy (reversal). In the second experiment, sham-operated and PL-lesioned rats had their first two strategy switches in the reverse order, which was followed by a second rule shifting and reversal. The results indicate that lesions did not affect initial acquisition, but impaired the first rule shifting and reversal. Thorough analyses of rats' performance indicate that lesioned rats were still able to demonstrate some behavioral flexibility but have difficulties in solving response conflicts, which in turn may affect behavioral flexibility. Both areas were differentially involved in the resolution of response conflict, with the IL involved in the choice of strategy previously known to be nonvalid, and the PL in the selection and maintenance of that strategy.

Switch-connected HyperX network

Science.gov (United States)

Chen, Dong; Heidelberger, Philip

2018-02-13

A network system includes a plurality of sub-network planes and global switches. The sub-network planes have a same network topology as each other. Each of the sub-network planes includes edge switches. Each of the edge switches has N ports. Each of the global switches is configured to connect a group of edge switches at a same location in the sub-network planes. In each of the sub-network planes, some of the N ports of each of the edge switches are connected to end nodes, and others of the N ports are connected to other edge switches in the same sub-network plane, other of the N ports are connected to at least one of the global switches.

FreeSWITCH Cookbook

CERN Document Server

Minessale, Anthony

2012-01-01

This is a problem-solution approach to take your FreeSWITCH skills to the next level, where everything is explained in a practical way. If you are a system administrator, hobbyist, or someone who uses FreeSWITCH on a regular basis, this book is for you. Whether you are a FreeSWITCH expert or just getting started, this book will take your skills to the next level.

Task-set switching under cue-based versus memory-based switching conditions in younger and older adults.

Science.gov (United States)

Kray, Jutta

2006-08-11

Adult age differences in task switching and advance preparation were examined by comparing cue-based and memory-based switching conditions. Task switching was assessed by determining two types of costs that occur at the general (mixing costs) and specific (switching costs) level of switching. Advance preparation was investigated by varying the time interval until the next task (short, middle, very long). Results indicated that the implementation of task sets was different for cue-based switching with random task sequences and memory-based switching with predictable task sequences. Switching costs were strongly reduced under cue-based switching conditions, indicating that task-set cues facilitate the retrieval of the next task. Age differences were found for mixing costs and for switching costs only under cue-based conditions in which older adults showed smaller switching costs than younger adults. It is suggested that older adults adopt a less extreme bias between two tasks than younger adults in situations associated with uncertainty. For cue-based switching with random task sequences, older adults are less engaged in a complete reconfiguration of task sets because of the probability of a further task change. Furthermore, the reduction of switching costs was more pronounced for cue- than memory-based switching for short preparation intervals, whereas the reduction of switch costs was more pronounced for memory- than cue-based switching for longer preparation intervals at least for older adults. Together these findings suggest that the implementation of task sets is functionally different for the two types of task-switching conditions.

Task uncertainty can account for mixing and switch costs in task-switching.

Directory of Open Access Journals (Sweden)

Patrick S Cooper

Full Text Available Cognitive control is required in situations that involve uncertainty or change, such as when resolving conflict, selecting responses and switching tasks. Recently, it has been suggested that cognitive control can be conceptualised as a mechanism which prioritises goal-relevant information to deal with uncertainty. This hypothesis has been supported using a paradigm that requires conflict resolution. In this study, we examine whether cognitive control during task switching is also consistent with this notion. We used information theory to quantify the level of uncertainty in different trial types during a cued task-switching paradigm. We test the hypothesis that differences in uncertainty between task repeat and task switch trials can account for typical behavioural effects in task-switching. Increasing uncertainty was associated with less efficient performance (i.e., slower and less accurate, particularly on switch trials and trials that afford little opportunity for advance preparation. Interestingly, both mixing and switch costs were associated with a common episodic control process. These results support the notion that cognitive control may be conceptualised as an information processor that serves to resolve uncertainty in the environment.

LCT protective dump-switch tests

International Nuclear Information System (INIS)

Parsons, W.M.

1981-01-01

Each of the six coils in the Large Coil Task (LCT) has a separate power supply, dump resistor, and switching circuit. Each switching circuit contains five switches, two of which are redundant. The three remaining switches perform separate duties in an emergency dump situation. These three switches were tested to determine their ability to meet the LCT conditions

Reversible thermochromic response based on photonic crystal structure in butterfly wing

Science.gov (United States)

Wang, Wanlin; Wang, Guo Ping; Zhang, Wang; Zhang, Di

2018-01-01

Subtle responsive properties can be achieved by the photonic crystal (PC) nanostructures of butterfly based on thermal expansion effect. The studies focused on making the sample visually distinct. However, the response is restricted by limited thermal expansion coefficients. We herein report a new class of reversible thermochromic response achieved by controlling the ambient refractive index in butterfly PC structure. The photonic ethanol-filled nanoarchitecture sample is simply assembled by sealing liquid ethanol filling Papilio ulysses butterfly wing. Volatile ethanol is used to modulate the ambient refractive index. The sample is sealed with glasses to ensure reversibility. Liquid ethanol filling butterfly wing demonstrated significant allochroic response to ambient refractive index, which can be controlled by the liquefaction and vaporization of ethanol. This design is capable of converting thermal energy into visual color signals. The mechanism of this distinct response is simulated and proven by band theory. The response properties are performed with different filled chemicals and different structure parameters. Thus, the reversible thermochromic response design might have potential use in the fields such as detection, photonic switch, displays, and so forth.

Nucleation of Magnetization Reversal in Individual Nanosized Particles and Wires

Science.gov (United States)

Wernsdorfer, W.

1997-03-01

Low temperatures magnetization measurements of individual ferromagnetic particles and wires are presented. The detector was a Nb micro-bridge-DC-SQUID, elaborated using electron-beam lithography. We studied particles fabricated by electron beam lithography. They had an elliptic contour with axes between 50 and 1000 nm and a thickness between 5 and 50 nm and were made of Ni, Co, Fe (W. Wernsdorfer et al., J. Magn. Magn. Mat., 145, 33 (1995) and 151, 38 (1995), and Phys. Rev. B, 53, 3341 (1996).). Furthermore, we studied Ni and Co wires (cylinders) with diameters ranging from 40 nm to 100 nm and lengths up to 5000 nm (W. Wernsdorfer et al., Phys. Rev. Lett., 77, 1873 (1996)). They were produced by the technique of electrodeposition in nanoporous polycarbonate membranes (J. Meier, B. Doudin and J.-Ph. Ansermet, J. Appl. Phys, 79, 6010 (1996).). We studied nanoparticles and filled carbon nanotubes synthesized by arc-discharge, with dimensions between 10 and 500 nm. These particles are single crystalline and the surface roughness is about two atomic layers (C. Guerret-Pi=E9court, Y. Le Bouar, A. Loiseau and H. Pascard, Nature, 372, 761 (1994).). Finally, we studied single crystalline particles elaborated by colloidal self assemblies (M. P. Pileni et al., submitted.). The angular dependence of the magnetization reversal could be explained approximately by simple classical micromagnetic concepts: uniform rotation and curling. However, our measurement evidenced nucleation and propagation of domain walls except for the smallest particles of about 20 nm. The switching field distributions as a function of temperature and field sweeping rate and the probabilities of switching showed that the magnetization reversal was thermally activated. These measurements allowed us to estimate the "activation volume" which triggered the magnetization reversal. Our measurements showed for the first time that the magnetization reversal of a ferromagnetic nanoparticle of good quality can be

Switch on, switch off: stiction in nanoelectromechanical switches

KAUST Repository

Wagner, Till J W

2013-06-13

We present a theoretical investigation of stiction in nanoscale electromechanical contact switches. We develop a mathematical model to describe the deflection of a cantilever beam in response to both electrostatic and van der Waals forces. Particular focus is given to the question of whether adhesive van der Waals forces cause the cantilever to remain in the \\'ON\\' state even when the electrostatic forces are removed. In contrast to previous studies, our theory accounts for deflections with large slopes (i.e. geometrically nonlinear). We solve the resulting equations numerically to study how a cantilever beam adheres to a rigid electrode: transitions between \\'free\\', \\'pinned\\' and \\'clamped\\' states are shown to be discontinuous and to exhibit significant hysteresis. Our findings are compared to previous results from linearized models and the implications for nanoelectromechanical cantilever switch design are discussed. © 2013 IOP Publishing Ltd.

Control synthesis of switched systems

CERN Document Server

Zhao, Xudong; Niu, Ben; Wu, Tingting

2017-01-01

This book offers its readers a detailed overview of the synthesis of switched systems, with a focus on switching stabilization and intelligent control. The problems investigated are not only previously unsolved theoretically but also of practical importance in many applications: voltage conversion, naval piloting and navigation and robotics, for example. The book considers general switched-system models and provides more efficient design methods to bring together theory and application more closely than was possible using classical methods. It also discusses several different classes of switched systems. For general switched linear systems and switched nonlinear systems comprising unstable subsystems, it introduces novel ideas such as invariant subspace theory and the time-scheduled Lyapunov function method of designing switching signals to stabilize the underlying systems. For some typical switched nonlinear systems affected by various complex dynamics, the book proposes novel design approaches based on inte...

Monolayer MoS{sub 2} self-switching diodes

Energy Technology Data Exchange (ETDEWEB)

Al-Dirini, Feras, E-mail: alf@unimelb.edu.au; Hossain, Md Sharafat [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Centre for Neural Engineering, University of Melbourne, Victoria (Australia); Victorian Research Laboratory, National ICT Australia, West Melbourne, Victoria (Australia); Hossain, Faruque M.; Skafidas, Efstratios [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Centre for Neural Engineering, University of Melbourne, Victoria (Australia); Mohammed, Mahmood A. [Princess Sumaya University for Technology, Amman (Jordan); Nirmalathas, Ampalavanapillai [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Melbourne Networked Society Institute (MNSI), University of Melbourne, Victoria (Australia)

2016-01-28

This paper presents a new molybdenum disulphide (MoS{sub 2}) nanodevice that acts as a two-terminal field-effect rectifier. The device is an atomically-thin two-dimensional self-switching diode (SSD) that can be realized within a single MoS{sub 2} monolayer with very minimal process steps. Quantum simulation results are presented confirming the device's operation as a diode and showing strong non-linear I-V characteristics. Interestingly, the device shows p-type behavior, in which conduction is dominated by holes as majority charge carriers and the flow of reverse current is enhanced, while the flow of forward current is suppressed, in contrast to monolayer graphene SSDs, which behave as n-type devices. The presence of a large bandgap in monolayer MoS{sub 2} results in strong control over the channel, showing complete channel pinch-off in forward conduction, which was confirmed with transmission pathways plots. The device exhibited large leakage tunnelling current through the insulating trenches, which may have been due to the lack of passivation; nevertheless, reverse current remained to be 6 times higher than forward current, showing strong rectification. The effect of p-type substitutional channel doping of sulphur with phosphorus was investigated and showed that it greatly enhances the performance of the device, increasing the reverse-to-forward current rectification ratio more than an order of magnitude, up to a value of 70.

Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions

KAUST Repository

Guan, Xinwei

2017-11-23

Hybrid Perovskites have emerged as a class of highly versatile functional materials with applications in solar cells, photodetectors, transistors, and lasers. Recently, there have also been reports on perovskite-based resistive switching (RS) memories, but there remain open questions regarding device stability and switching mechanism. Here, an RS memory based on a high-quality capacitor structure made of an MAPbBr3 (CH3NH3PbBr3) perovskite layer sandwiched between Au and indium tin oxide (ITO) electrodes is reported. Such perovskite devices exhibit reliable RS with an ON/OFF ratio greater than 103, endurance over 103 cycles, and a retention time of 104 s. The analysis suggests that the RS operation hinges on the migration of charged ions, most likely MA vacancies, which reversibly modifies the perovskite bulk transport and the Schottky barrier at the MAPbBr3/ITO interface. Such perovskite memory devices can also be fabricated on flexible polyethylene terephthalate substrates with high bendability and reliability. Furthermore, it is found that reference devices made of another hybrid perovskite MAPbI3 consistently exhibit filament-type switching behavior. This work elucidates the important role of processing-dependent defects in the charge transport of hybrid perovskites and provides insights on the ion-redistribution-based RS in perovskite memory devices.

Effect of different substitution position on the switching behavior in single-molecule device with carbon nanotube electrodes

Science.gov (United States)

Yang, Jingjuan; Han, Xiaoxiao; Yuan, Peipei; Bian, Baoan; Wang, Yixiang

2018-01-01

We investigate the electronic transport properties of dihydroazulene (DHA) and vinylheptafulvene (VHF) molecule sandwiched between two carbon nanotubes using density functional theory and non-equilibrium Green's function. The device displays significantly switching behavior between DHA and VHF isomerizations. It is found the different substitution position of F in the molecule influences the switching ratio of device, which is analyzed by transmission spectra and molecular projected self-consistent Hamiltonian. The observed negative differential resistance effect is explained by transmission spectra and transmission eigenstates of transmission peak in the bias window. The observed reverse of current in VHF form in which two H atoms on the right side of the benzene ring of the molecule are replaced by F is explained by transmission spectra and molecule-electrode coupling with the varied bias. The results suggest that the reasonable substitution position of molecule may improve the switching ratio, displaying a potential application in future molecular circuit.

Low-Crosstalk Composite Optical Crosspoint Switches

Science.gov (United States)

Pan, Jing-Jong; Liang, Frank

1993-01-01

Composite optical switch includes two elementary optical switches in tandem, plus optical absorbers. Like elementary optical switches, composite optical switches assembled into switch matrix. Performance enhanced by increasing number of elementary switches. Advantage of concept: crosstalk reduced to acceptably low level at moderate cost of doubling number of elementary switches rather than at greater cost of tightening manufacturing tolerances and exerting more-precise control over operating conditions.

Organization of the channel-switching process in parallel computer systems based on a matrix optical switch

Science.gov (United States)

Golomidov, Y. V.; Li, S. K.; Popov, S. A.; Smolov, V. B.

1986-01-01

After a classification and analysis of electronic and optoelectronic switching devices, the design principles and structure of a matrix optical switch is described. The switching and pair-exclusion operations in this type of switch are examined, and a method for the optical switching of communication channels is elaborated. Finally, attention is given to the structural organization of a parallel computer system with a matrix optical switch.

A Redox-Active Bistable Molecular Switch Mounted inside a Metal-Organic Framework.

Science.gov (United States)

Chen, Qishui; Sun, Junling; Li, Peng; Hod, Idan; Moghadam, Peyman Z; Kean, Zachary S; Snurr, Randall Q; Hupp, Joseph T; Farha, Omar K; Stoddart, J Fraser

2016-11-02

We describe the incorporation of a bistable mechanically interlocked molecule (MIM) into a robust Zr-based metal-organic framework (MOF), NU-1000, by employing a post-synthetic functionalization protocol. On average, close to two bistable [2]catenanes can be incorporated per repeating unit of the hexagonal channels of NU-1000. The reversible redox-switching of the bistable [2]catenanes is retained inside the MOF, as evidenced by solid-state UV-vis-NIR reflectance spectroscopy and cyclic voltammetry. This research demonstrates that bistable MIMs are capable of exhibiting robust dynamics inside the nanopores of a MOF.

IGBT Switching Characteristic Curve Embedded Half-Bridge MMC Modelling and Real Time Simulation Realization

Science.gov (United States)

Zhengang, Lu; Hongyang, Yu; Xi, Yang

2017-05-01

The Modular Multilevel Converter (MMC) is one of the most attractive topologies in recent years for medium or high voltage industrial applications, such as high voltage dc transmission (HVDC) and medium voltage varying speed motor drive. The wide adoption of MMCs in industry is mainly due to its flexible expandability, transformer-less configuration, common dc bus, high reliability from redundancy, and so on. But, when the sub module number of MMC is more, the test of MMC controller will cost more time and effort. Hardware in the loop test based on real time simulator will save a lot of time and money caused by the MMC test. And due to the flexible of HIL, it becomes more and more popular in the industry area. The MMC modelling method remains an important issue for the MMC HIL test. Specifically, the VSC model should realistically reflect the nonlinear device switching characteristics, switching and conduction losses, tailing current, and diode reverse recovery behaviour of a realistic converter. In this paper, an IGBT switching characteristic curve embedded half-bridge MMC modelling method is proposed. This method is based on the switching curve referring and sample circuit calculation, and it is sample for implementation. Based on the proposed method, a FPGA real time simulation is carried out with 200ns sample time. The real time simulation results show the proposed method is correct.

Experience with the new reverse injection scheme in the Tevatron

International Nuclear Information System (INIS)

Saritepe, S.; Goderre, G.; Annala, G.; Hanna, B.; Braun, A.

1993-01-01

In the new injection scenario the antiproton beam is injected onto a helical Tevatron orbit to avoid the detrimental effects of the beam-beam interaction at 150 GeV. The new scenario required changes in the tuning procedures. Antiprotons are too precious to be used for tuning, therefore the antiproton injection line has to be tuned with protons by reverse injecting them from the Tevatron into the Main Ring. Previously, the reverse injection was performed in one supercycle. One batch of uncoalesced bunches was injected into the Tevatron and ejected after 40 seconds. The orbit closure was performed in the Main Ring. In the new scheme the lambertson magnets have to be moved, separator polarities have to be switched, activities that cannot be completed in one supercycle. Therefore, the reverse injection sequence was changed. This involved the redefinition of TVBS (Tevatron Beam Synchronized Clock) event $D8 as MRBS (Main Ring Beam Synchronized Clock) $D8 thus making it possible to inject 6 proton batches (or coalesced bunches) and eject them one at a time on command, performing orbit closure each time in the Main Ring

Very high plasma switches. Basic plasma physics and switch technology

International Nuclear Information System (INIS)

Doucet, H.J.; Roche, M.; Buzzi, J.M.

1988-01-01

A review of some high power switches recently developed for very high power technology is made with a special attention to the aspects of plasma physics involved in the mechanisms, which determine the limits of the possible switching parameters

Optical packet switched networks

DEFF Research Database (Denmark)

Hansen, Peter Bukhave

1999-01-01

Optical packet switched networks are investigated with emphasis on the performance of the packet switch blocks. Initially, the network context of the optical packet switched network is described showing that a packet network will provide transparency, flexibility and bridge the granularity gap...... in interferometric wavelength converters is investigated showing that a 10 Gbit/s 19 4x4 swich blocks can be cascaded at a BER of 10-14. An analytical traffic model enables the calculation of the traffice performance of a WDM packet network. Hereby the importance of WDM and wavelegth conversion in the switch blocks...... is established as a flexible means to reduce the optical buffer, e.g., the number of fibre delay lines for a 16x16 switch block is reduced from 23 to 6 by going from 2 to 8 wavelength channels pr. inlet. Additionally, a component count analysis is carried out to illustrate the trade-offs in the switch block...

Femtosecond all-optical parallel logic gates based on tunable saturable to reverse saturable absorption in graphene-oxide thin films

International Nuclear Information System (INIS)

Roy, Sukhdev; Yadav, Chandresh

2013-01-01

A detailed theoretical analysis of ultrafast transition from saturable absorption (SA) to reverse saturable absorption (RSA) has been presented in graphene-oxide thin films with femtosecond laser pulses at 800 nm. Increase in pulse intensity leads to switching from SA to RSA with increased contrast due to two-photon absorption induced excited-state absorption. Theoretical results are in good agreement with reported experimental results. Interestingly, it is also shown that increase in concentration results in RSA to SA transition. The switching has been optimized to design parallel all-optical femtosecond NOT, AND, OR, XOR, and the universal NAND and NOR logic gates

The Numerical Simulation of the Nanosecond Switching of a p-SOS Diode

Science.gov (United States)

Podolska, N. I.; Lyublinskiy, A. G.; Grekhov, I. V.

2017-12-01

Abrupt high-density reverse current interruption has been numerically simulated for switching from forward to reverse bias in a silicon p + P 0 n + structure ( p-SOS diode). It has been shown that the current interruption in this structure occurs as a result of the formation of two dynamic domains of a strong electric field in regions in which the free carrier concentration substantially exceeds the concentration of the doping impurity. The first domain is formed in the n + region at the n + P 0 junction, while the second domain is formed in the P 0 region at the interface with the p + layer. The second domain expands much faster, and this domain mainly determines the current interruption rate. Good agreement is achieved between the simulation results and the experimental data when the actual electric circuit determining the electron-hole plasma pumping in and out is accurately taken into account.

Magnetization reversal in ultrashort magnetic field pulses

International Nuclear Information System (INIS)

Bauer, M.; Lopusnik, R.; Fassbender, J.; Hillebrands, B.

2000-01-01

We report the switching properties of a thin magnetic film subject to an ultrashort, laterally localized magnetic field pulse, obtained by numerical investigations. The magnetization distribution in the film is calculated on a grid assuming Stoner-like coherent rotation within the grid square size. Perpendicularly and in-plane magnetized films exhibit a magnetization reversal due to a 4 ps magnetic field pulse. Outside the central region the pulse duration is short compared to the precession period. In this area the evolution of the magnetization during the field pulse does not depend strongly on magnetic damping and/or pulse shape. However, the final magnetization distribution is affected by the magnetic damping. Although the pulse duration is short compared to the precession period, the time needed for the relaxation of the magnetization to the equilibrium state is rather large. The influence of the different magnetic anisotropy contributions and the magnetic damping parameter enters into the magnetization reversal process. Comparing the case of perpendicular anisotropy with different kinds of in-plane anisotropies, a principal difference is found due to the symmetry of the shape anisotropy with respect to the anisotropy in question

Optical switching systems using nanostructures

DEFF Research Database (Denmark)

Stubkjær, Kristian

2004-01-01

High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems.......High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems....

Realization of a four-step molecular switch in scanning tunneling microscope manipulation of single chlorophyll-a molecules

Science.gov (United States)

Iancu, Violeta; Hla, Saw-Wai

2006-01-01

Single chlorophyll-a molecules, a vital resource for the sustenance of life on Earth, have been investigated by using scanning tunneling microscope manipulation and spectroscopy on a gold substrate at 4.6 K. Chlorophyll-a binds on Au(111) via its porphyrin unit while the phytyl-chain is elevated from the surface by the support of four CH3 groups. By injecting tunneling electrons from the scanning tunneling microscope tip, we are able to bend the phytyl-chain, which enables the switching of four molecular conformations in a controlled manner. Statistical analyses and structural calculations reveal that all reversible switching mechanisms are initiated by a single tunneling-electron energy-transfer process, which induces bond rotation within the phytyl-chain. PMID:16954201

Practical switching power supply design

CERN Document Server

Brown, Martin C

1990-01-01

Take the ""black magic"" out of switching power supplies with Practical Switching Power Supply Design! This is a comprehensive ""hands-on"" guide to the theory behind, and design of, PWM and resonant switching supplies. You'll find information on switching supply operation and selecting an appropriate topology for your application. There's extensive coverage of buck, boost, flyback, push-pull, half bridge, and full bridge regulator circuits. Special attention is given to semiconductors used in switching supplies. RFI/EMI reduction, grounding, testing, and safety standards are also deta

Switching Phenomena

Science.gov (United States)

Stanley, H. E.; Buldyrev, S. V.; Franzese, G.; Havlin, S.; Mallamace, F.; Mazza, M. G.; Kumar, P.; Plerou, V.; Preis, T.; Stokely, K.; Xu, L.

One challenge of biology, medicine, and economics is that the systems treated by these serious scientific disciplines can suddenly "switch" from one behavior to another, even though they possess no perfect metronome in time. As if by magic, out of nothing but randomness one finds remarkably fine-tuned processes in time. The past century has, philosophically, been concerned with placing aside the human tendency to see the universe as a fine-tuned machine. Here we will address the challenge of uncovering how, through randomness (albeit, as we shall see, strongly correlated randomness), one can arrive at some of the many temporal patterns in physics, economics, and medicine and even begin to characterize the switching phenomena that enable a system to pass from one state to another. We discuss some applications of correlated randomness to understanding switching phenomena in various fields. Specifically, we present evidence from experiments and from computer simulations supporting the hypothesis that water's anomalies are related to a switching point (which is not unlike the "tipping point" immortalized by Malcolm Gladwell), and that the bubbles in economic phenomena that occur on all scales are not "outliers" (another Gladwell immortalization).

Magnetization Switching of a Co /Pt Multilayered Perpendicular Nanomagnet Assisted by a Microwave Field with Time-Varying Frequency

Science.gov (United States)

Suto, Hirofumi; Kanao, Taro; Nagasawa, Tazumi; Mizushima, Koichi; Sato, Rie

2018-05-01

Microwave-assisted magnetization switching (MAS) is attracting attention as a method for reversing nanomagnets with a high magnetic anisotropy by using a small-amplitude magnetic field. We experimentally study MAS of a perpendicularly magnetized nanomagnet by applying a microwave magnetic field with a time-varying frequency. Because the microwave field frequency can follow the nonlinear decrease of the resonance frequency, larger magnetization excitation than that in a constant-frequency microwave field is induced, which enhances the MAS effect. The switching field decreases almost linearly as the start value of the time-varying microwave field frequency increases, and it becomes smaller than the minimum switching field in a constant-frequency microwave field. To obtain this enhancement of the MAS effect, the end value of the time-varying microwave field frequency needs to be almost the same as or lower than the critical frequency for MAS in a constant-frequency microwave field. In addition, the frequency change typically needs to take 1 ns or longer to make the rate of change slow enough for the magnetization to follow the frequency change. This switching behavior is qualitatively explained by the theory based on the macrospin model.

Contraceptive discontinuation and switching among couples receiving integrated HIV and family planning services in Lusaka, Zambia.

Science.gov (United States)

Haddad, Lisa; Wall, Kristin M; Vwalika, Bellington; Khu, Naw Htee; Brill, Ilene; Kilembe, William; Stephenson, Rob; Chomba, Elwyn; Vwalika, Cheswa; Tichacek, Amanda; Allen, Susan

2013-10-01

To describe predictors of contraceptive method discontinuation and switching behaviours among HIV-positive couples receiving couples' voluntary HIV counselling and testing services in Lusaka, Zambia. Couples were randomized in a factorial design to two-family planning educational intervention videos, received comprehensive family planning services and were assessed every 3 months for contraceptive initiation, discontinuation and switching. We modelled factors associated with contraceptive method upgrading and downgrading via multivariate Andersen-Gill models. Most women continued the initial method selected after randomization. The highest rates of discontinuation/switching were observed for injectable contraceptive and intrauterine device users. Time to discontinuing the more effective contraceptive methods or downgrading to oral contraceptives or condoms was associated with the women's younger age, desire for more children within the next year, heavy menstrual bleeding, bleeding between periods and cystitis/dysuria. Health concerns among women about contraceptive implants and male partners not wanting more children were associated with upgrading from oral contraceptives or condoms. HIV status of the woman or the couple was not predictive of switching or stopping. We found complicated patterns of contraceptive use. The predictors of contraception switching indicate that interventions targeted to younger couples that address common contraception-related misconceptions could improve effective family planning utilization. We recommend these findings be used to increase the uptake and continuation of contraception, especially long-acting reversible contraceptive (LARC) methods, and that fertility goal based, LARC-focused family planning be offered as an integral part of HIV prevention services.

Electrically Reversible Redox-Switchable Polydopamine Films for Regulating Cell Behavior

International Nuclear Information System (INIS)

Tan, Guoxin; Liu, Yan; Wu, Yuxuan; Ouyang, Kongyou; Zhou, Lei; Yu, Peng; Liao, Jinwen; Ning, Chengyun

2017-01-01

Highlights: • The phenolic/quinone groups on polydopamine can redox-switchable reversible under electrical stimulation. • The quinone groups on PDA (oxidized PDA) enhanced cell spreading and proliferation. • The phenolic groups on PDA (reduced PDA) induced cell differentiation. - Abstract: Switchable surfaces that respond to external stimuli are important for regulating cell behavior. The results herein suggest that the redox process of polydopamine (PDA) is a switching reaction between oxidized polydopamine and reduced polydopamine, involving an interconversion of coupled two-proton (2H + ) and two-electron (2e − ) processes. The redox-switchable reversible surface potential arising from the potential-tunable redox reaction of the phenolic and quinone groups on PDA on titanium induced both cell adhesion and spreading. In vitro experiments demonstrated that the quinone groups on PDA greatly enhanced pre-osteoblasts MC3T3-E1 cell spreading and proliferation. Phenolic groups enhanced the induction of differentiation. The proposed methodology may allow further investigation of switchable surfaces for biological and medical applications.

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

International Nuclear Information System (INIS)

Zhou, Dayu; Guan, Yan; Vopson, Melvin M.; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

2015-01-01

HfO 2 -based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E c ), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E c ), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

Magnetization reversal driven by a spin torque oscillator

Energy Technology Data Exchange (ETDEWEB)

Sbiaa, R., E-mail: rachid@squ.edu.om [Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123 Muscat (Oman)

2014-09-01

Magnetization reversal of a magnetic free layer under spin transfer torque (STT) effect from a magnetic hard layer with a fixed magnetization direction and an oscillating layer is investigated. By including STT from the oscillating layer with in-plane anisotropy and orthogonal polarizer, magnetization-time dependence of free layer is determined. The results show that the frequency and amplitude of oscillations can be varied by adjusting the current density and magnetic properties. For an optimal oscillation frequency (f{sub opt}), a reduction of the switching time (t{sub 0}) of the free layer is observed. Both f{sub opt} and t{sub 0} increase with the anisotropy field of the free layer.

Complementary resistive switching in BaTiO3/NiO bilayer with opposite switching polarities

Science.gov (United States)

Li, Shuo; Wei, Xianhua; Lei, Yao; Yuan, Xincai; Zeng, Huizhong

2016-12-01

Resistive switching behaviors have been investigated in the Au/BaTiO3/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO3 thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I-V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO3 and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

Optimization of multi-branch switched diversity systems

KAUST Repository

Nam, Haewoon

2009-10-01

A performance optimization based on the optimal switching threshold(s) for a multi-branch switched diversity system is discussed in this paper. For the conventional multi-branch switched diversity system with a single switching threshold, the optimal switching threshold is a function of both the average channel SNR and the number of diversity branches, where computing the optimal switching threshold is not a simple task when the number of diversity branches is high. The newly proposed multi-branch switched diversity system is based on a sequence of switching thresholds, instead of a single switching threshold, where a different diversity branch uses a different switching threshold for signal comparison. Thanks to the fact that each switching threshold in the sequence can be optimized only based on the number of the remaining diversity branches, the proposed system makes it easy to find these switching thresholds. Furthermore, some selected numerical and simulation results show that the proposed switched diversity system with the sequence of optimal switching thresholds outperforms the conventional system with the single optimal switching threshold. © 2009 IEEE.

Hybrid switch for resonant power converters

Science.gov (United States)

Lai, Jih-Sheng; Yu, Wensong

2014-09-09

A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

Alternative Approach of Developing Optical Binary Adder Using Reversible Peres Gates

Directory of Open Access Journals (Sweden)

Dhoumendra Mandal

2018-01-01

Full Text Available All-optical devices will play a very significant and crucial role in the modern all-optical network by eliminating the bottleneck of opto-electro-opto- (O-E-O- conversion. Unfortunately, the conventional logic gates lose information at the output, and the states of the outputs cannot give any credible impressions of the states of the inputs. In this article, at first, the authors have proposed a method of designing an optical three-input-three-output reversible Peres gate. Authors have deployed polarization switching characteristic of Semiconductor Optical Amplifier (SOA for designing this circuit. The authors have also proposed a method of designing an optical reversible full adder, using two such Peres gates and subsequently a data recovery circuit which can recover the input data of the adder. The authors have chosen frequency encoded data for processing the operation. The proposed scheme has been verified by simulation results.

Local Peltier-effect-induced reversible metal–insulator transition in VO{sub 2} nanowires

Energy Technology Data Exchange (ETDEWEB)

Takami, Hidefumi; Kanki, Teruo, E-mail: kanki@sanken.osaka-u.ac.jp, E-mail: h-tanaka@sanken.osaka-u.ac.jp; Tanaka, Hidekazu, E-mail: kanki@sanken.osaka-u.ac.jp, E-mail: h-tanaka@sanken.osaka-u.ac.jp [Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

2016-06-15

We report anomalous resistance leaps and drops in VO{sub 2} nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO{sub 2} nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

Tutorial: Integrated-photonic switching structures

Science.gov (United States)

Soref, Richard

2018-02-01

Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable "mesh" switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ˜1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

Observation of reversible, rapid changes in drug susceptibility of hypoxic tumor cells in a microfluidic device

Energy Technology Data Exchange (ETDEWEB)

Germain, Todd; Ansari, Megan; Pappas, Dimitri, E-mail: d.pappas@ttu.edu

2016-09-14

Hypoxia is a major stimulus for increased drug resistance and for survival of tumor cells. Work from our group and others has shown that hypoxia increases resistance to anti-cancer compounds, radiation, and other damage-pathway cytotoxic agents. In this work we utilize a microfluidic culture system capable of rapid switching of local oxygen concentrations to determine changes in drug resistance in prostate cancer cells. We observed rapid adaptation to hypoxia, with drug resistance to 2 μM staurosporine established within 30 min of hypoxia. Annexin-V/Sytox Green apoptosis assays over 9 h showed 78.0% viability, compared to 84.5% viability in control cells (normoxic cells with no staurosporine). Normoxic cells exposed to the same staurosporine concentration had a viability of 48.6% after 9 h. Hypoxia adaptation was rapid and reversible, with Hypoxic cells treated with 20% oxygen for 30 min responding to staurosporine with 51.6% viability after drug treatment for 9 h. Induction of apoptosis through the receptor-mediated pathway, which bypasses anti-apoptosis mechanisms induced by hypoxia, resulted in 39.4 ± 7% cell viability. The rapid reversibility indicates co-treatment of oxygen with anti-cancer compounds may be a potential therapeutic target. - Highlights: • Microfluidic system switches rapidly between normoxia and hypoxia (5 min). • Observation of rapid adaptation of PC3 cells to hypoxia and normoxia (30 min). • Drug susceptibility in tumor cells restored after chip switched to normoxia for 30 min.

Generalized Multi-Cell Switched-Inductor and Switched-Capacitor Z-source Inverters

DEFF Research Database (Denmark)

Li, Ding; Chiang Loh, Poh; Zhu, Miao

2013-01-01

. Their boosting gains are, therefore, limited in practice. To overcome these shortcomings, the generalized switched-inductor and switched-capacitor Z-source inverters are proposed, whose extra boosting abilities and other advantages have already been verified in simulation and experiment....

Complementary resistive switching in BaTiO{sub 3}/NiO bilayer with opposite switching polarities

Energy Technology Data Exchange (ETDEWEB)

Li, Shuo [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Institut d’Electronique de Micro-électronique et de Nanotechnologie (IEMN), CNRS, Université des Sciences et Technologies de Lille, avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq cedex (France); Wei, Xianhua, E-mail: weixianhua@swust.edu.cn [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Lei, Yao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yuan, Xincai [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Zeng, Huizhong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China)

2016-12-15

Graphical abstract: Au/BaTiO{sub 3}/NiO/Pt bilayer device shows complementary resistive switching (CRS) without electroforming which is mainly ascribed to anti-serial stack of two RRAM cells with bipolar behaviors. - Highlights: • Complementary resistive switching (CRS) has been investigated in Au/BaTiO{sub 3}/NiO/Pt by stacking the two elements with different switching types. • The realization of complementary resistive switching (CRS) is mainly ascribed to the anti-serial stack of two RRAM cells with bipolar behaviors. • Complementary resistive switching (CRS) in bilayer is effective to solve the sneak current problem briefly and economically. - Abstract: Resistive switching behaviors have been investigated in the Au/BaTiO{sub 3}/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO{sub 3} thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I–V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO{sub 3} and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

Switch on the competition. Causes, consequences and policy implications of consumer switching costs

International Nuclear Information System (INIS)

Pomp, M.; Shestalova, V.; Rangel, L.

2005-09-01

The success or failure of reforms aimed at liberalising markets depends to an important degree on consumer behaviour. If consumers do not base their choices on differences in prices and quality, competition between firms may be weak and the benefits of liberalisation to consumers may be small. One possible reason why consumers may respond only weakly to differences in price and quality is high costs of switching to another firm. This report presents a framework for analysing markets with switching costs and applies the framework in two empirical case studies. The first case study analyses the residential energy market, the second focuses on the market for social health insurance. In both markets, there are indications that switching costs are substantial. The report discusses policy options for reducing switching costs and for alleviating the consequences of switching costs

Switch on the competition. Causes, consequences and policy implications of consumer switching costs

Energy Technology Data Exchange (ETDEWEB)

Pomp, M.; Shestalova, V.; Rangel, L.

2005-09-15

The success or failure of reforms aimed at liberalising markets depends to an important degree on consumer behaviour. If consumers do not base their choices on differences in prices and quality, competition between firms may be weak and the benefits of liberalisation to consumers may be small. One possible reason why consumers may respond only weakly to differences in price and quality is high costs of switching to another firm. This report presents a framework for analysing markets with switching costs and applies the framework in two empirical case studies. The first case study analyses the residential energy market, the second focuses on the market for social health insurance. In both markets, there are indications that switching costs are substantial. The report discusses policy options for reducing switching costs and for alleviating the consequences of switching costs.

Adhesion switch on a gecko-foot inspired smart nanocupule surface

Science.gov (United States)

Song, Wenlong

2014-10-01

A gecko-foot inspired nanocupule surface prepared by an AAO template covering method was composed of poly(N-isopropylacrylamide) and polystyrene blend. Both superhydrophobicity and high adhesion force were exhibited on the PNIPAm/PS film at room temperature. Moreover, by controlling the temperature, the wettability of the film could be switched between 138.1 +/- 5.5° and 150.6 +/- 1.5°, and the adhesion force could also be correspondingly tuned accurately by temperature. This reversibility in both wettability and adhesion force could be used to construct smart devices for fine selection of water droplets. The proof-of-concept was demonstrated by the selective catching of precise weight controlled water droplets at different temperatures. This work could help us to design new type of devices for blood bioanalysis or lossless drug transportation.A gecko-foot inspired nanocupule surface prepared by an AAO template covering method was composed of poly(N-isopropylacrylamide) and polystyrene blend. Both superhydrophobicity and high adhesion force were exhibited on the PNIPAm/PS film at room temperature. Moreover, by controlling the temperature, the wettability of the film could be switched between 138.1 +/- 5.5° and 150.6 +/- 1.5°, and the adhesion force could also be correspondingly tuned accurately by temperature. This reversibility in both wettability and adhesion force could be used to construct smart devices for fine selection of water droplets. The proof-of-concept was demonstrated by the selective catching of precise weight controlled water droplets at different temperatures. This work could help us to design new type of devices for blood bioanalysis or lossless drug transportation. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04090b

Optically triggered high voltage switch network and method for switching a high voltage

Science.gov (United States)

El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

1993-01-19

An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

Optically triggered high voltage switch network and method for switching a high voltage

Energy Technology Data Exchange (ETDEWEB)

El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

1993-01-19

An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

Software Defined Networking (SDN) controlled all optical switching networks with multi-dimensional switching architecture

Science.gov (United States)

Zhao, Yongli; Ji, Yuefeng; Zhang, Jie; Li, Hui; Xiong, Qianjin; Qiu, Shaofeng

2014-08-01

Ultrahigh throughout capacity requirement is challenging the current optical switching nodes with the fast development of data center networks. Pbit/s level all optical switching networks need to be deployed soon, which will cause the high complexity of node architecture. How to control the future network and node equipment together will become a new problem. An enhanced Software Defined Networking (eSDN) control architecture is proposed in the paper, which consists of Provider NOX (P-NOX) and Node NOX (N-NOX). With the cooperation of P-NOX and N-NOX, the flexible control of the entire network can be achieved. All optical switching network testbed has been experimentally demonstrated with efficient control of enhanced Software Defined Networking (eSDN). Pbit/s level all optical switching nodes in the testbed are implemented based on multi-dimensional switching architecture, i.e. multi-level and multi-planar. Due to the space and cost limitation, each optical switching node is only equipped with four input line boxes and four output line boxes respectively. Experimental results are given to verify the performance of our proposed control and switching architecture.

Interfacial exchange coupling and magnetization reversal in perpendicular [Co/Ni]N/TbCo composite structures.

Science.gov (United States)

Tang, M H; Zhang, Zongzhi; Tian, S Y; Wang, J; Ma, B; Jin, Q Y

2015-06-15

Interfacial exchange coupling and magnetization reversal characteristics in the perpendicular heterostructures consisting of an amorphous ferrimagnetic (FI) TbxCo(100-x) alloy layer exchange-coupled with a ferromagnetic (FM) [Co/Ni]N multilayer have been investigated. As compared with pure TbxCo(100-x) alloy, the magnetization compensation composition of the heterostructures shift to a higher Tb content, implying Co/Ni also serves to compensate the Tb moment in TbCo layer. The net magnetization switching field Hc⊥ and interlayer interfacial coupling field Hex, are not only sensitive to the magnetization and thickness of the switched TbxCo(100-x) or [Co/Ni]N layer, but also to the perpendicular magnetic anisotropy strength of the pinning layer. By tuning the layer structure we achieve simultaneously both large Hc⊥ = 1.31 T and Hex = 2.19 T. These results, in addition to the fundamental interest, are important to understanding of the interfacial coupling interaction in the FM/FI heterostructures, which could offer the guiding of potential applications in heat-assisted magnetic recording or all-optical switching recording technique.

Tuning and switching the hypersonic phononic properties of elastic impedance contrast nanocomposites.

Science.gov (United States)

Sato, Akihiro; Pennec, Yan; Shingne, Nitin; Thurn-Albrecht, Thomas; Knoll, Wolfgang; Steinhart, Martin; Djafari-Rouhani, Bahram; Fytas, George

2010-06-22

Anodic aluminum oxide (AAO) containing arrays of aligned cylindrical nanopores infiltrated with polymers is a well-defined model system for the study of hypersound propagation in polymer nanocomposites. Hypersonic phononic properties of AAO/polymer nanocomposites such as phonon localization and anisotropic sound propagation can be tailored by adjusting elastic contrast and density contrast between the components. Changes in density and elastic properties of the component located in the nanopores induced by phase transitions allow reversible modification of the phononic band structure and mode switching. As example in case, the crystallization and melting of poly(vinylidene difluoride) inside AAO was investigated.

Intense redox-driven chiroptical switching with a 580 mV hysteresis actuated through reversible dimerization of an azoniahelicene

Czech Academy of Sciences Publication Activity Database

Brandt, J. R.; Pospíšil, Lubomír; Bednárová, Lucie; da Costa, R. C.; White, A. J. P.; Mori, T.; Teplý, Filip; Fuchter, M. J.

2017-01-01

Roč. 53, č. 65 (2017), s. 9059-9062 ISSN 1359-7345 R&D Projects: GA MZd(CZ) NV16-31156A Institutional support: RVO:61388963 Keywords : electron transfer * electrochiroptical response * molecular switches Subject RIV: CC - Organic Chemistry OBOR OECD: Organic chemistry Impact factor: 6.319, year: 2016 http://pubs.rsc.org/en/content/articlepdf/2017/cc/c7cc04903j

Electromechanical magnetization switching

Energy Technology Data Exchange (ETDEWEB)

Chudnovsky, Eugene M. [Department of Physics and Astronomy, Lehman College and Graduate School, The City University of New York, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Jaafar, Reem [Department of Mathematics, Engineering and Computer Science, LaGuardia Community College, The City University of New York, 31-10 Thomson Avenue, Long Island City, New York 11101 (United States)

2015-03-14

We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained.

Electromechanical magnetization switching

International Nuclear Information System (INIS)

Chudnovsky, Eugene M.; Jaafar, Reem

2015-01-01

We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained

JUNOS Enterprise Switching

CERN Document Server

Reynolds, Harry

2009-01-01

JUNOS Enterprise Switching is the only detailed technical book on Juniper Networks' new Ethernet-switching EX product platform. With this book, you'll learn all about the hardware and ASIC design prowess of the EX platform, as well as the JUNOS Software that powers it. Not only is this extremely practical book a useful, hands-on manual to the EX platform, it also makes an excellent study guide for certification exams in the JNTCP enterprise tracks. The authors have based JUNOS Enterprise Switching on their own Juniper training practices and programs, as well as the configuration, maintenanc

Switching behavior and novel stable states of magnetic hexagonal nanorings

Energy Technology Data Exchange (ETDEWEB)

Yasir Rafique, M., E-mail: myasir.rafique@ciitlahore.edu.pk [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Pan, Liqing; Guo, Zhengang [College of Science and Research Institute for New Energy, China Three Gorges University, Yichang 443002 (China)

2017-06-15

Micromagnetic simulations for Cobalt hexagonal shape nanorings show onion (O) and vortex state (V) along with new state named “tri-domain state”. The tri-domain state is observed in sufficiently large width of ring. The magnetic reversible mechanism and transition of states are explained with help of vector field display. The transitions from one state to other occur by propagation of domain wall. The vertical parts of hexagonal rings play important role in developing the new “tri-domain” state. The behaviors of switching fields from onion to tri-domain (HO-Tr), tri-domain to vortex state (HTr-V) and vortex to onion state and “states size” are discussed in term of geometrical parameter of ring.

Comparison of switching control algorithms effective in restricting the switching in the neighborhood of the origin

International Nuclear Information System (INIS)

Joung, JinWook; Chung, Lan; Smyth, Andrew W

2010-01-01

The active interaction control (AIC) system consisting of a primary structure, an auxiliary structure and an interaction element was proposed to protect the primary structure against earthquakes and winds. The objective of the AIC system in reducing the responses of the primary structure is fulfilled by activating or deactivating the switching between the engagement and the disengagement of the primary and auxiliary structures through the interaction element. The status of the interaction element is controlled by switching control algorithms. The previously developed switching control algorithms require an excessive amount of switching, which is inefficient. In this paper, the excessive amount of switching is restricted by imposing an appropriately designed switching boundary region, where switching is prohibited, on pre-designed engagement–disengagement conditions. Two different approaches are used in designing the newly proposed AID-off and AID-off 2 algorithms. The AID-off 2 algorithm is designed to affect deactivated switching regions explicitly, unlike the AID-off algorithm, which follows the same procedure of designing the engagement–disengagement conditions of the previously developed algorithms, by using the current status of the AIC system. Both algorithms are shown to be effective in reducing the amount of switching times triggered from the previously developed AID algorithm under an appropriately selected control sampling period for different earthquakes, but the AID-off 2 algorithm outperforms the AID-off algorithm in reducing the number of switching times

Reversible tuning of the wettability on a silver mesodendritic surface by the formation and disruption of lipid-like bilayers

Energy Technology Data Exchange (ETDEWEB)

Gao, Yuanji; Xia, Bing; Liu, Jie; Ding, Lisheng; Li, Bangjing; Zhou, Yan, E-mail: zhouyan@cib.ac.cn

2015-02-28

Graphical abstract: - Highlights: • We report a reversible solvent-induced transition from superhydrophobicity to hydrophilicity. • We tuned reversibly the wettability based on the silver mesodendritic structure. • The lipid-like bilayers are formed via non-covalent bond. • Wettability switching on liquid/solid interfaces was achieved by tuning the surface chemical composition. - Abstract: This study reported a smart, easy to apply, flexible and green strategy for obtaining a biomimic micro-nanostructures. 1-Mercapto-12-(p-nitrophenoxy) dodecane (MPND) and n-dodecanethiol were used to form low surface energy film on a silver mesodendritic structure coated zinc substrate. Scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS) were used to characterize surface morphology and mesocrystal structures. Noncovalently linked sodium nonanoyloxy benzene sulfonate (NOBS) was used to form “lipid-like bilayers” on the surface, making it possible for the surface to switch its surface wettability reversibly. The water contact angle (CA) on the constructed surface varies from 168 ± 2° (before processed by NOBS) to 55 ± 2° (after processed by NOBS). This phenomenon can be explained by the formation and disruption of “lipid-like bilayers” to affect the wettability of the surface. This work is of great scientific interests and may provide insights into the design of novel functional devices that are relevant to surface wettability, such as microfluidic devices and sensors.

Reversible tuning of the wettability on a silver mesodendritic surface by the formation and disruption of lipid-like bilayers

International Nuclear Information System (INIS)

Gao, Yuanji; Xia, Bing; Liu, Jie; Ding, Lisheng; Li, Bangjing; Zhou, Yan

2015-01-01

Graphical abstract: - Highlights: • We report a reversible solvent-induced transition from superhydrophobicity to hydrophilicity. • We tuned reversibly the wettability based on the silver mesodendritic structure. • The lipid-like bilayers are formed via non-covalent bond. • Wettability switching on liquid/solid interfaces was achieved by tuning the surface chemical composition. - Abstract: This study reported a smart, easy to apply, flexible and green strategy for obtaining a biomimic micro-nanostructures. 1-Mercapto-12-(p-nitrophenoxy) dodecane (MPND) and n-dodecanethiol were used to form low surface energy film on a silver mesodendritic structure coated zinc substrate. Scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS) were used to characterize surface morphology and mesocrystal structures. Noncovalently linked sodium nonanoyloxy benzene sulfonate (NOBS) was used to form “lipid-like bilayers” on the surface, making it possible for the surface to switch its surface wettability reversibly. The water contact angle (CA) on the constructed surface varies from 168 ± 2° (before processed by NOBS) to 55 ± 2° (after processed by NOBS). This phenomenon can be explained by the formation and disruption of “lipid-like bilayers” to affect the wettability of the surface. This work is of great scientific interests and may provide insights into the design of novel functional devices that are relevant to surface wettability, such as microfluidic devices and sensors

Elements of magnetic switching

International Nuclear Information System (INIS)

Aaland, K.

1983-01-01

This chapter describes magnetic switching as a method of connecting a capacitor bank (source) to a load; reviews several successful applications of magnetic switching, and discusses switching transformers, limitations and future possibilities. Some of the inflexibility and especially the high cost of magnetic materials may be overcome with the availability of the new splash cooled ribbons (Metglas). Experience has shown that magnetics works despite shock, radiation or noise interferences

Know-How on design of switching regulator

International Nuclear Information System (INIS)

1985-08-01

This book introduces switching regulator from base to application, which deals with fundamentals of switching regulator such as the reason of boom about switching regulator, understanding simple circuit without electric transformer and decision of circuit type with input voltage and output voltage, configuration and characteristic of switching regulator, a concrete design of switching regulator, pulse width control circuit and protection circuit, concrete circuit examples of switching power and the point of switching regulator.

DNA-directed control of enzyme-inhibitor complex formation: a modular approach to reversibly switch enzyme activity

NARCIS (Netherlands)

Janssen, B.M.G.; Engelen, W.; Merkx, M.

2015-01-01

DNA-templated reversible assembly of an enzyme–inhibitor complex is presented as a new and highly modular approach to control enzyme activity. TEM1-ß-lactamase and its inhibitor protein BLIP were conjugated to different oligonucleotides, resulting in enzyme inhibition in the presence of template

Influence of polymerisation on the reversibility of low-energy proton exchange reactions by Para-Aminothiolphenol.

Science.gov (United States)

Balakrishnan, Divya; Lamblin, Guillaume; Thomann, Jean Sebastien; Guillot, Jerome; Duday, David; van den Berg, Albert; Olthuis, Wouter; Pascual-García, César

2017-11-13

The reversibility of redox processes is an important function for sensing and molecular electronic devices such as pH reporters or molecular switches. Here we report the electrochemical behaviour and redox reversibility of para-aminothiolphenol (PATP) after different polymerisation methods. We used electrochemical and photo-polymerisation in neutral buffers and plasma polymerisation in air to induce reversible redox states. The chemical stoichiometry and surface coverage of PATP in the polymerized layers were characterized by X-ray photoelectron spectroscopy (XPS), while cyclic voltammetry (CV) was used to measure the charge transfer, double layer capacitance and electrochemical rate of the layers during successive potential cycles. Our results show that the surface coverage of the redox active species is higher on electro-polymerised samples, however, after consecutive cycles all the methods converge to the same charge transfer, while the plasma polymerised samples achieve higher efficiency per molecule and UV polymerised samples have a higher electron transfer rate.

MENGAPA PERUSAHAAN MELAKUKAN AUDITOR SWITCH?

Directory of Open Access Journals (Sweden)

Kadek Sumadi

2011-01-01

Full Text Available The existence of a large number of accounting firms allowsprovides companies choices whether to stay with current firm or switchto another accounting firm. Decision of Minister of FinanceNo.423/KMK.06/2002 states that a company must switch auditor afterfive years of consecutive assignment. This is mandatory. The questionrises when a company voluntarily switches its auditor. Why does thishappen?One of the reasons is that management does not satisfy withauditor opinion, except for unqualified opinion. New management teamwould directly or indirectly encourage auditor switch to align accountingand reporting policies. Moreover an expanding company expects positivereaction when it does auditor switch. Profitability is also one reason fora company to switch auditor, for example, when a company earns moreprofit it tends to hire more credible auditor. On the other hand, when thecompany faces a financial distress, it probably would switch auditor aswell.

Comparison of Ion Beam opening switch and plasma opening switch performance

International Nuclear Information System (INIS)

Greenly, J.R.; Rondeau, G.D.; Sheldon, H.T.; Dreike, P.L.

1986-01-01

The Ion Beam opening switch (IBOS) experiment has shown that an intense charge-neutralized ion beam can carry current across a vacuum magnetically-insulated transmission line and then transfer that current to a downstream load quickly. In the IBOS experiment, a 10 cm wide parallel plate transmission line was fed up to 100 kA peak current by a 4Ω, 100 ns pulser. An ion beam of up to 100 A/cm/sup 2/, 100-300 keV protons or carbon was injected through the anode of the line in a 10 cm x 10 cm region. The line terminated in either a 15 nH short circuit or an electron diode with variable gap. The ion beam switch was able to carry up to 70 kA of line current before load current began to flow. This model is also quantitatively consistent with the observation that switch conduction current is not linear with either injected ion beam current or switch area

Memory resistive switching in CeO2-based film microstructures patterned by a focused ion beam

DEFF Research Database (Denmark)

Velichko, A.; Boriskov, P.; Grishin, A.

2014-01-01

) with insulating properties and a semiconducting ormetallic lowresistance state (ON) with resistance ratios up to 104. The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment......Heteroepitaxial CeO2 (80 nm)/La0.5Sr0.5CoO3 (500 nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO2 microjunctions patterned by a focused ion beam on a La0.5Sr0.5CoO3 film exhibit reproducible reversible switching between a high resistance state (OFF...... of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown. © 2014 Elsevier B.V. All rights reserved....

Analytical Performance Evaluation of Different Switch Solutions

Directory of Open Access Journals (Sweden)

Francisco Sans

2013-01-01

Full Text Available The virtualization of the network access layer has opened new doors in how we perceive networks. With this virtualization of the network, it is possible to transform a regular PC with several network interface cards into a switch. PC-based switches are becoming an alternative to off-the-shelf switches, since they are cheaper. For this reason, it is important to evaluate the performance of PC-based switches. In this paper, we present a performance evaluation of two PC-based switches, using Open vSwitch and LiSA, and compare their performance with an off-the-shelf Cisco switch. The RTT, throughput, and fairness for UDP are measured for both Ethernet and Fast Ethernet technologies. From this research, we can conclude that the Cisco switch presents the best performance, and both PC-based switches have similar performance. Between Open vSwitch and LiSA, Open vSwitch represents a better choice since it has more features and is currently actively developed.

Principles of broadband switching and networking

CERN Document Server

Liew, Soung C

2010-01-01

An authoritative introduction to the roles of switching and transmission in broadband integrated services networks Principles of Broadband Switching and Networking explains the design and analysis of switch architectures suitable for broadband integrated services networks, emphasizing packet-switched interconnection networks with distributed routing algorithms. The text examines the mathematical properties of these networks, rather than specific implementation technologies. Although the pedagogical explanations in this book are in the context of switches, many of the fundamenta

Error rate degradation due to switch crosstalk in large modular switched optical networks

DEFF Research Database (Denmark)

Saxtoft, Christian; Chidgey, P.

1993-01-01

A theoretical model of an optical network incorporating wavelength selective elements, amplifiers, couplers and switches is presented. The model is used to evaluate a large modular switch optical network that provides the capability of adapting easily to changes in network traffic requirements. T....... The network dimensions are shown to be limited by the optical crosstalk in the switch matrices and by the polarization dependent loss in the optical components...

Pemodelan Markov Switching Autoregressive

OpenAIRE

Ariyani, Fiqria Devi; Warsito, Budi; Yasin, Hasbi

2014-01-01

Transition from depreciation to appreciation of exchange rate is one of regime switching that ignored by classic time series model, such as ARIMA, ARCH, or GARCH. Therefore, economic variables are modeled by Markov Switching Autoregressive (MSAR) which consider the regime switching. MLE is not applicable to parameters estimation because regime is an unobservable variable. So that filtering and smoothing process are applied to see the regime probabilities of observation. Using this model, tran...

Energy losses in switches

International Nuclear Information System (INIS)

Martin, T.H.; Seamen, J.F.; Jobe, D.O.

1993-01-01

The authors experiments show energy losses between 2 and 10 times that of the resistive time predictions. The experiments used hydrogen, helium, air, nitrogen, SF 6 polyethylene, and water for the switching dielectric. Previously underestimated switch losses have caused over predicting the accelerator outputs. Accurate estimation of these losses is now necessary for new high-efficiency pulsed power devices where the switching losses constitute the major portion of the total energy loss. They found that the switch energy losses scale as (V peak I peak ) 1.1846 . When using this scaling, the energy losses in any of the tested dielectrics are almost the same. This relationship is valid for several orders of magnitude and suggested a theoretical basis for these results. Currents up to .65 MA, with voltages to 3 MV were applied to various gaps during these experiments. The authors data and the developed theory indicates that the switch power loss continues for a much longer time than the resistive time, with peak power loss generally occurring at peak current in a ranging discharge instead of the early current time. All of the experiments were circuit code modeled after developing a new switch loss version based on the theory. The circuit code predicts switch energy loss and peak currents as a function of time. During analysis of the data they noticed slight constant offsets between the theory and data that depended on the dielectric. They modified the plasma conductivity for each tested dielectric to lessen this offset

Software Switching for Data Acquisition

CERN Multimedia

CERN. Geneva; Malone, David

2016-01-01

In this talk we discuss the feasibility of replacing telecom-class routers with a topology of commodity servers acting as software switches in data acquisition. We extend the popular software switch, Open vSwitch, with a dedicated, throughput-oriented buffering mechanism. We compare the performance under heavy many-to-one congestion to typical Ethernet switches and evaluate the scalability when building larger topologies, exploiting the integration with software-defined networking technologies. Please note that David Malone will speak on behalf of Grzegorz Jereczek.

Low-Voltage Switched-Capacitor Circuits

DEFF Research Database (Denmark)

Bidari, E.; Keskin, M.; Maloberti, F.

1999-01-01

Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

Voltage manipulation of the magnetization reversal in Fe/n-GaAs/piezoelectric heterostructure

International Nuclear Information System (INIS)

Li, Yuanyuan; Luo, Wengang; Zhu, Lijun; Zhao, Jianhua; Wang, Kaiyou

2015-01-01

We carefully investigated the in-plane magnetization reversal and corresponding magnetic domain structures in Fe/n-GaAs/piezoelectric heterostructure using longitudinal magneto-optical Kerr microscopy. The coexistence of the in-plane <100> cubic and [11 ¯ 0] uniaxial magnetic anisotropy was observed in this system at virgin state. The piezo voltages can effectively manipulate the magnetic properties of the Fe/n-GaAs/piezoelectric heterostructure, where the manipulation of two-jump to one-jump magnetization switching during the magnetic reversal was achieved with magnetic field applied in [100] direction. Our findings on manipulation of ferromagnetization in this heterostructure could be important for future metal-semiconductor spintronic applications. The additional uniaxial anisotropy induced by piezo voltages obtained at ±75 V is ±1.4×10 3 J/m 3 . - Highlights: • In this work, we use piezo voltages not only realize the significant change of coercivity but also effectively manipulate the magnetization transition from one step to two steps during magnetic reversal, indicating that the piezo-voltages can be used to effectively control the magnetization reversal. • The additional uniaxial anisotropy induced by piezo voltages at +/−75 V are +/−1.4×10 3 J/m 3 . This work could be very used for future metal-semiconductor spintronic devices

Bootstrapped Low-Voltage Analog Switches

DEFF Research Database (Denmark)

Steensgaard-Madsen, Jesper

1999-01-01

Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

Energy Technology Data Exchange (ETDEWEB)

Baldacchini, Chiara [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy); Institute of Agro-Environmental and Forest Biology, CNR, I-05010 Porano (Italy); Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore, E-mail: cannistr@unitus.it [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy)

2015-05-04

Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

Robust and Selective Switching of an FeIII Spin-Crossover Compound on Cu2N/Cu(100) with Memristance Behavior.

Science.gov (United States)

Jasper-Toennies, Torben; Gruber, Manuel; Karan, Sujoy; Jacob, Hanne; Tuczek, Felix; Berndt, Richard

2017-11-08

The switching between two spin states makes spin-crossover molecules on surfaces very attractive for potential applications in molecular spintronics. Using scanning tunneling microscopy, the successful deposition of [Fe(pap) 2 ] + (pap = N-2-pyridylmethylidene-2-hydroxyphenylaminato) molecules on Cu 2 N/Cu(100) surface is evidenced. The deposited Fe III spin-crossover compound is controllably switched between three different states, each of them exhibiting a characteristic tunneling conductance. The conductance is therefore employed to readily read the state of the molecules. A comparison of the experimental data with the results of density functional theory calculations reveals that all Fe(pap) 2 molecules are initially in their high-spin state. The two other states are compatible with the low-spin state of the molecule but differ with respect to their coupling to the substrate. As a proof of concept, the reversible and selective nature of the switching is used to build a two-molecule memory.

Characteristics of magnetic switch used as main switch of solid-state accelerator

International Nuclear Information System (INIS)

Li Song; Qian Baoliang; Yang Hanwu; Meng Zhipeng; Yang Shi

2012-01-01

In order to improve the performance of solid-state accelerator, the characteristics of magnetic switch used as the main switch of the accelerator have been investigated. The volume of magnetic core, the loss, and saturated inductance of the magnetic switch have been derived. The results show that the spacing factor of the magnetic switch reaches the peak when the height of the magnetic materials is 0.05 m for selected magnetic cores. The saturated inductance of the windings changes slowly when the average magnetic path length of the core is greater than 1 m. The physical process of saturation in the cores was analyzed by using saturation-wave theory. The rise-time factor of the output pulse was derived. The thickness, resistivity and magnetic path length difference of the magnetic core are shown to be key parameters affecting the rise-time factor. (authors)

Thermoswitchable catalysis controlled by reversible dispersion/aggregation change of nanoreactors in the presence of α-CD polymers

Science.gov (United States)

Li, Yinfeng; Hu, Jie; Niu, Chengrong; Leng, Jinghang; Li, Songjun

2018-06-01

The present work was aimed at preparing a thermosensitive nanoreactor system which could adjust its dispersion/aggregation status according to external temperature change to achieve the switchable catalysis. The mesoporous silica nanoparticle (MSNP) was selected as the framework material of the nanoreactor, and Ag nanoparticles were encapsulated in the mesoporous silica by an in situ reaction. Dodecyl groups were introduced onto MSNP surface, which could transform reversibly between complexation and disassociation with α-cyclodextrin (CD) cavity upon temperature change. It was found that the nanoreactors aggregated and the catalysis was effectively switched ‘off’ in the presence of CD polymers at low temperature (20 °C). However, when the temperature increased to 50 °C, the nanoreactors redispersed and catalysis successfully switched ‘on’.

Recent developments in switching theory

CERN Document Server

Mukhopadhyay, Amar

2013-01-01

Electrical Science Series: Recent Developments in Switching Theory covers the progress in the study of the switching theory. The book discusses the simplified proof of Post's theorem on completeness of logic primitives; the role of feedback in combinational switching circuits; and the systematic procedure for the design of Lupanov decoding networks. The text also describes the classical results on counting theorems and their application to the classification of switching functions under different notions of equivalence, including linear and affine equivalences. The development of abstract har

Amorphous metal based nanoelectromechanical switch

KAUST Repository

Mayet, Abdulilah M.; Smith, Casey; Hussain, Muhammad Mustafa

2013-01-01

Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

Switched-capacitor isolated LED driver

Science.gov (United States)

Sanders, Seth R.; Kline, Mitchell

2016-03-22

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

Amorphous metal based nanoelectromechanical switch

KAUST Repository

Mayet, Abdulilah M.

2013-04-01

Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

Host population structure impedes reversion to drug sensitivity after discontinuation of treatment.

Directory of Open Access Journals (Sweden)

Jonas I Liechti

2017-08-01

Full Text Available Intense use of antibiotics for the treatment of diseases such as tuberculosis, malaria, Staphylococcus aureus or gonorrhea has led to rapidly increasing population levels of drug resistance. This has generally necessitated a switch to new drugs and the discontinuation of older ones, after which resistance often only declines slowly or even persists indefinitely. These long-term effects are usually ascribed to low fitness costs of resistance in absence of the drug. Here we show that structure in the host population, in particular heterogeneity in number of contacts, also plays an important role in the reversion dynamics. Host contact structure acts both during the phase of intense treatment, leading to non-random distributions of the resistant strain among the infected population, and after the discontinuation of the drug, by affecting the competition dynamics resulting in a mitigation of fitness advantages. As a consequence, we observe both a lower rate of reversion and a lower probability that reversion to sensitivity on the population level occurs after treatment is stopped. Our simulations show that the impact of heterogeneity in the host structure is maximal in the biologically most plausible parameter range, namely when fitness costs of resistance are small.

Switching and sensing spin states of co-porphyrin in bimolecular reactions on Au111 using scanning tunneling microscopy.

Science.gov (United States)

Kim, Howon; Chang, Yun Hee; Lee, Soon-Hyeong; Kim, Yong-Hyun; Kahng, Se-Jong

2013-10-22

Controlling and sensing spin states of magnetic molecules at the single-molecule level is essential for spintronic molecular device applications. Here, we demonstrate that spin states of Co-porphyrin on Au(111) can be reversibly switched over by binding and unbinding of the NO molecule and can be sensed using scanning tunneling microscopy and spectroscopy (STM and STS). Before NO exposure, Co-porphryin showed a clear zero-bias peak, a signature of Kondo effect in STS, whereas after NO exposures, it formed a molecular complex, NO-Co-porphyrin, that did not show any zero-bias feature, implying that the Kondo effect was switched off by binding of NO. The Kondo effect could be switched back on by unbinding of NO through single-molecule manipulation or thermal desorption. Our density functional theory calculation results explain the observations with pairing of unpaired spins in dz(2) and ppπ* orbitals of Co-porphyrin and NO, respectively. Our study opens up ways to control molecular spin state and Kondo effect by means of enormous variety of bimolecular binding and unbinding reactions on metallic surfaces.

Dynamical principles of cell-cycle arrest: Reversible, irreversible, and mixed strategies

Science.gov (United States)

Pfeuty, Benjamin

2012-08-01

Living cells often alternate between proliferating and nonproliferating states as part of individual or collective strategies to adapt to complex and changing environments. To this aim, they have evolved a biochemical regulatory network enabling them to switch between cell-division cycles (i.e., oscillatory state) and cell-cycle arrests (i.e., steady state) in response to extracellular cues. This can be achieved by means of a variety of bifurcation mechanisms that potentially give rise to qualitatively distinct cell-cycle arrest properties. In this paper, we study the dynamics of a minimal biochemical network model in which a cell-division oscillator and a differentiation switch mutually antagonize. We identify the existence of three biologically plausible bifurcation scenarios organized around a codimension-four swallowtail-homoclinic singularity. As a result, the model exhibits a broad repertoire of cell-cycle arrest properties in terms of reversibility of these arrests, tunability of interdivision time, and ability to track time-varying signals. This dynamic versatility would explain the diversity of cell-cycle arrest strategies developed in different living species and functional contexts.

Call for Papers: Photonics in Switching

Science.gov (United States)

Wosinska, Lena; Glick, Madeleine

2006-04-01

Call for Papers: Photonics in Switching Guest Editors: Lena Wosinska, Royal Institute of Technology (KTH) / ICT Sweden Madeleine Glick, Intel Research, Cambridge, UK Technologies based on DWDM systems allow data transmission with bit rates of Tbit/s on a single fiber. To facilitate this enormous transmission volume, high-capacity and high-speed network nodes become inevitable in the optical network. Wideband switching, WDM switching, optical burst switching (OBS), and optical packet switching (OPS) are promising technologies for harnessing the bandwidth of WDM optical fiber networks in a highly flexible and efficient manner. As a number of key optical component technologies approach maturity, photonics in switching is becoming an increasingly attractive and practical solution for the next-generation of optical networks. The scope of this special issue is focused on the technology and architecture of optical switching nodes, including the architectural and algorithmic aspects of high-speed optical networks. Scope of Submission The scope of the papers includes, but is not limited to, the following topics: WDM node architectures Novel device technologies enabling photonics in switching, such as optical switch fabrics, optical memory, and wavelength conversion Routing protocols WDM switching and routing Quality of service Performance measurement and evaluation Next-generation optical networks: architecture, signaling, and control Traffic measurement and field trials Optical burst and packet switching OBS/OPS node architectures Burst/Packet scheduling and routing algorithms Contention resolution/avoidance strategies Services and applications for OBS/OPS (e.g., grid networks, storage-area networks, etc.) Burst assembly and ingress traffic shaping Hybrid OBS/TDM or OBS/wavelength routing Manuscript Submission To submit to this special issue, follow the normal procedure for submission to JON and select ``Photonics in Switching' in the features indicator of the online

Dual origin of defect magnetism in graphene and its reversible switching by molecular doping.

Science.gov (United States)

Nair, R R; Tsai, I-L; Sepioni, M; Lehtinen, O; Keinonen, J; Krasheninnikov, A V; Castro Neto, A H; Katsnelson, M I; Geim, A K; Grigorieva, I V

2013-01-01

Control of magnetism by applied voltage is desirable for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and attracts interest because of its weak spin-orbit interaction, the ability to control electronic properties by the electric field effect and the possibility to introduce paramagnetic centres such as vacancies and adatoms. Here we show that the magnetism of adatoms in graphene is itinerant and can be controlled by doping, so that magnetic moments are switched on and off. The much-discussed vacancy magnetism is found to have a dual origin, with two approximately equal contributions; one from itinerant magnetism and the other from dangling bonds. Our work suggests that graphene's spin transport can be controlled by the field effect, similar to its electronic and optical properties, and that spin diffusion can be significantly enhanced above a certain carrier density.

Unnecessary antiretroviral treatment switches and accumulation of HIV resistance mutations; two arguments for viral load monitoring in Africa.

Science.gov (United States)

Sigaloff, Kim C E; Hamers, Raph L; Wallis, Carole L; Kityo, Cissy; Siwale, Margaret; Ive, Prudence; Botes, Mariette E; Mandaliya, Kishor; Wellington, Maureen; Osibogun, Akin; Stevens, Wendy S; van Vugt, Michèle; de Wit, Tobias F Rinke

2011-09-01

This study aimed to investigate the consequences of using clinicoimmunological criteria to detect antiretroviral treatment (ART) failure and guide regimen switches in HIV-infected adults in sub-Saharan Africa. Frequencies of unnecessary switches, patterns of HIV drug resistance, and risk factors for the accumulation of nucleoside reverse transcriptase inhibitor (NRTI)-associated mutations were evaluated. Cross-sectional analysis of adults switching ART regimens at 13 clinical sites in 6 African countries was performed. Two types of failure identification were compared: diagnosis of clinicoimmunological failure without viral load testing (CIF only) or CIF with local targeted viral load testing (targeted VL). After study enrollment, reference HIV RNA and genotype were determined retrospectively. Logistic regression assessed factors associated with multiple thymidine analogue mutations (TAMs) and NRTI cross-resistance (≥2 TAMs or Q151M or K65R/K70E). Of 250 patients with CIF switching to second-line ART, targeted VL was performed in 186. Unnecessary switch at reference HIV RNA <1000 copies per milliliter occurred in 46.9% of CIF only patients versus 12.4% of patients with targeted VL (P < 0.001). NRTI cross-resistance was observed in 48.0% of 183 specimens available for genotypic analysis, comprising ≥2 TAMs (37.7%), K65R (7.1%), K70E (3.3%), or Q151M (3.3%). The presence of NRTI cross-resistance was associated with the duration of ART exposure and zidovudine use. Clinicoimmunological monitoring without viral load testing resulted in frequent unnecessary regimen switches. Prolonged treatment failure was indicated by extensive NRTI cross-resistance. Access to virological monitoring should be expanded to prevent inappropriate switches, enable early failure detection and preserve second-line treatment options in Africa.

Reversible flowchart languages and the structured reversible program theorem

DEFF Research Database (Denmark)

Yokoyama, Tetsuo; Axelsen, Holger Bock; Glück, Robert

2008-01-01

Many irreversible computation models have reversible counterparts, but these are poorly understood at present. We introduce reversible flowcharts with an assertion operator and show that any reversible flowchart can be simulated by a structured reversible flowchart using only three control flow...... operators. Reversible flowcharts are r- Turing-complete, meaning that they can simuluate reversible Turing machines without garbage data. We also demonstrate the injectivization of classical flowcharts into reversible flowcharts. The reversible flowchart computation model provides a theoretical...

Soft switching buck-boost converter for photovoltaic power generation; Taiyoko hatsuden no tame no soft switching shokoatsu converter

Energy Technology Data Exchange (ETDEWEB)

Lee, H. [Kyungnam University (Korea, Republic of)

1996-10-27

A soft switching method with small switching loss was proposed for the purpose of increasing the efficiency of a DC-DC boost converter which converted a DC current generated by solar cells to a variable DC current. Existing current converters are supplemented by using a snubber circuit around the switch so as to protect the switch by a hard switching action. However, with an increase of the output current, snubber loss is increased, reducing the efficiency. In order to solve this problem, the partial resonant switch method was applied to the converter; with this method of partially forming a resonant circuit only at the time of turning on/off of the switch, the switching loss was reduced through the soft switching, thereby making the proposed converter operate with high efficiency. Moreover, the resonant element of the partial resonant circuit using a snubber condenser, the energy accumulated in the condenser was regenerated on the power supply side without loss of snubber. With the regenerated energy, the proposed converter was provided with a smaller ratio of switching to use than the conventional converter. 4 refs., 7 figs., 1 tab.

Non-fragile switched H∞ control for morphing aircraft with asynchronous switching

Directory of Open Access Journals (Sweden)

Haoyu CHENG

2017-06-01

Full Text Available This paper deals with the problem of non-fragile linear parameter-varying (LPV H∞ control for morphing aircraft with asynchronous switching. The switched LPV model of morphing aircraft is established by Jacobian linearization approach according to the nonlinear model. The data missing is taken into account in the link from sensors to controllers and the link from controllers to actuators, which satisfies Bernoulli distribution. The non-fragile switched LPV controllers are constructed with consideration of the uncertainties of controllers and asynchronous switching phenomenon. The parameter-dependent Lyapunov functional method and mode-dependent average dwell time (MDADT method are combined to guarantee the stability and prescribed performance of the system. The sufficient conditions on the solvability of the problem are derived in the form of linear matrix inequalities (LMI. In order to achieve higher efficiency of the designing process, an algorithm is applied to divide the whole set into subsets automatically. Simulation results are provided to verify the effectiveness and superiority of the method in the paper.

Streamer model for high voltage water switches

International Nuclear Information System (INIS)

Sazama, F.J.; Kenyon, V.L. III

1979-01-01

An electrical switch model for high voltage water switches has been developed which predicts streamer-switching effects that correlate well with water-switch data from Casino over the past four years and with switch data from recent Aurora/AMP experiments. Preclosure rounding and postclosure resistive damping of pulseforming line voltage waveforms are explained in terms of spatially-extensive, capacitive-coupling of the conducting streamers as they propagate across the gap and in terms of time-dependent streamer resistance and inductance. The arc resistance of the Casino water switch and of a gas switch under test on Casino was determined by computer fit to be 0.5 +- 0.1 ohms and 0.3 +- 0.06 ohms respectively, during the time of peak current in the power pulse. Energy lost in the water switch during the first pulse is 18% of that stored in the pulseforming line while similar energy lost in the gas switch is 11%. The model is described, computer transient analyses are compared with observed water and gas switch data and the results - switch resistance, inductance and energy loss during the primary power pulse - are presented

Switching dynamics of TaOx-based threshold switching devices

Science.gov (United States)

Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

2018-03-01

Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

Development of the switching components for ZT-40

International Nuclear Information System (INIS)

Melton, J.G.; Dike, R.S.; Hanks, K.W.; Nunnally, W.C.

1977-01-01

Switching of the main capacitor banks for ZT-40 will be accomplished by spark gap switches. Initially, there will be 576 start switches and 288 crowbar switches. A development program is under way to develop three switches; (1) a versatile start switch, which can be used for both the I/sub z/ and the I/sub theta/ capacitor banks, with a wide operating voltage range, (2) a crowbar switch which is capable of crowbarring the circuit without the power crowbar bank, and (3) a power crowbar switch, which can handle 50 to 100 coulombs, so that a large number of crowbar switches will not be required when the power crowbar circuit is added. The problems with the start switches and the first crowbar switch have been solved, or alleviated. The development of a power crowbar switch has just begun

Switch mode power supply

International Nuclear Information System (INIS)

Kim, Hui Jun

1993-06-01

This book concentrates on switch mode power supply. It has four parts, which are introduction of switch mode power supply with DC-DC converter such as Buck converter boost converter, Buck-boost converter and PWM control circuit, explanation for SMPS with DC-DC converter modeling and power mode control, resonance converter like resonance switch, converter, multi resonance converter and series resonance and parallel resonance converters, basic test of SMPS with PWM control circuit, Buck converter, Boost converter, flyback converter, forward converter and IC for control circuit.

Reversible switching of wetting properties and erasable patterning of polymer surfaces using plasma oxidation and thermal treatment

Science.gov (United States)

Rashid, Zeeshan; Atay, Ipek; Soydan, Seren; Yagci, M. Baris; Jonáš, Alexandr; Yilgor, Emel; Kiraz, Alper; Yilgor, Iskender

2018-05-01

Polymer surfaces reversibly switchable from superhydrophobic to superhydrophilic by exposure to oxygen plasma and subsequent thermal treatment are demonstrated. Two inherently different polymers, hydrophobic segmented polydimethylsiloxane-urea copolymer (TPSC) and hydrophilic poly(methyl methacrylate) (PMMA) are modified with fumed silica nanoparticles to prepare superhydrophobic surfaces with roughness on nanometer to micrometer scale. Smooth TPSC and PMMA surfaces are also used as control samples. Regardless of their chemical structure and surface topography, all surfaces display completely reversible wetting behavior changing from hydrophobic to hydrophilic and back for many cycles upon plasma oxidation followed by thermal annealing. Influence of plasma power, plasma exposure time, annealing temperature and annealing time on the wetting behavior of polymeric surfaces are investigated. Surface compositions, textures and topographies are characterized by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and white light interferometry (WLI), before and after oxidation and thermal annealing. Wetting properties of the surfaces are determined by measuring their static, advancing and receding water contact angle. We conclude that the chemical structure and surface topography of the polymers play a relatively minor role in reversible wetting behavior, where the essential factors are surface oxidation and migration of polymer molecules to the surface upon thermal annealing. Reconfigurable water channels on polymer surfaces are produced by plasma treatment using a mask and thermal annealing cycles. Such patterned reconfigurable hydrophilic regions can find use in surface microfluidics and optofluidics applications.

Chromatic interocular-switch rivalry.

Science.gov (United States)

Christiansen, Jens H; D'Antona, Anthony D; Shevell, Steven K

2017-05-01

Interocular-switch rivalry (also known as stimulus rivalry) is a kind of binocular rivalry in which two rivalrous images are swapped between the eyes several times a second. The result is stable periods of one image and then the other, with stable intervals that span many eye swaps (Logothetis, Leopold, & Sheinberg, 1996). Previous work used this close kin of binocular rivalry with rivalrous forms. Experiments here test whether chromatic interocular-switch rivalry, in which the swapped stimuli differ in only chromaticity, results in slow alternation between two colors. Swapping equiluminant rivalrous chromaticities at 3.75 Hz resulted in slow perceptual color alternation, with one or the other color often continuously visible for two seconds or longer (during which there were 15+ eye swaps). A well-known theory for sustained percepts from interocular-switch rivalry with form is inhibitory competition between binocular neurons driven by monocular neurons with matched orientation tuning in each eye; such binocular neurons would produce a stable response when a given orientation is swapped between the eyes. A similar model can account for the percepts here from chromatic interocular-switch rivalry and is underpinned by the neurophysiological finding that color-preferring binocular neurons are driven by monocular neurons from each eye with well-matched chromatic selectivity (Peirce, Solomon, Forte, & Lennie, 2008). In contrast to chromatic interocular-switch rivalry, luminance interocular-switch rivalry with swapped stimuli that differ in only luminance did not result in slowly alternating percepts of different brightnesses.

Current-induced switching in a magnetic insulator

Science.gov (United States)

Avci, Can Onur; Quindeau, Andy; Pai, Chi-Feng; Mann, Maxwell; Caretta, Lucas; Tang, Astera S.; Onbasli, Mehmet C.; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-03-01

The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.

Optimization of multi-branch switched diversity systems

KAUST Repository

Nam, Haewoon; Alouini, Mohamed-Slim

2009-01-01

A performance optimization based on the optimal switching threshold(s) for a multi-branch switched diversity system is discussed in this paper. For the conventional multi-branch switched diversity system with a single switching threshold

A low-latency optical switch architecture using integrated μm SOI-based contention resolution and switching

Science.gov (United States)

Mourgias-Alexandris, G.; Moralis-Pegios, M.; Terzenidis, N.; Cherchi, M.; Harjanne, M.; Aalto, T.; Vyrsokinos, K.; Pleros, N.

2018-02-01

The urgent need for high-bandwidth and high-port connectivity in Data Centers has boosted the deployment of optoelectronic packet switches towards bringing high data-rate optics closer to the ASIC, realizing optical transceiver functions directly at the ASIC package for high-rate, low-energy and low-latency interconnects. Even though optics can offer a broad range of low-energy integrated switch fabrics for replacing electronic switches and seamlessly interface with the optical I/Os, the use of energy- and latency-consuming electronic SerDes continues to be a necessity, mainly dictated by the absence of integrated and reliable optical buffering solutions. SerDes undertakes the role of optimally synergizing the lower-speed electronic buffers with the incoming and outgoing optical streams, suggesting that a SerDes-released chip-scale optical switch fabric can be only realized in case all necessary functions including contention resolution and switching can be implemented on a common photonic integration platform. In this paper, we demonstrate experimentally a hybrid Broadcast-and-Select (BS) / wavelength routed optical switch that performs both the optical buffering and switching functions with μm-scale Silicon-integrated building blocks. Optical buffering is carried out in a silicon-integrated variable delay line bank with a record-high on-chip delay/footprint efficiency of 2.6ns/mm2 and up to 17.2 nsec delay capability, while switching is executed via a BS design and a silicon-integrated echelle grating, assisted by SOA-MZI wavelength conversion stages and controlled by a FPGA header processing module. The switch has been experimentally validated in a 3x3 arrangement with 10Gb/s NRZ optical data packets, demonstrating error-free switching operation with a power penalty of <5dB.

Untriggered water switching

International Nuclear Information System (INIS)

Van Devender, J.P.; Martin, T.H.

Recent experiments indicate that synchronous untriggered multichannel switching in water will permit the development of relatively simple, ultra-low impedance, short pulse, relativistic electron beam (REB) accelerators. These experiments resulted in the delivery of a 1.5 MV, 0.75 MA, 15 ns pulse into a two-ohm line with a current risetime of 2 x 10 14 A/sec. The apparatus consisted of a 3 MV Marx generator and a series of three 112 cm wide strip water lines separated by two edge-plane water-gap switches. The Marx generator charged the first line in less than 400 ns. The first switch then formed five or more channels. The second line was charged in 60 ns and broke down with 10 to 25 channels at a mean field of 1.6 MV/cm. The closure time of each spark channel along both switches was measured with a streak camera and showed low jitter. The resulting fast pulse line construction is simpler and should provide considerable costs savings from previous designs. Multiples of these low impedance lines in parallel can be employed to obtain power levels in the 10 14 W range for REB fusion studies. (U.S.)

Reverse Algols

Science.gov (United States)

Leung, K. C.

1989-01-01

Reverse Algols, binary systems with a semidetached configuration in which the more massive component is in contact with the critical equipotential surface, are examined. Observational evidence for reverse Algols is presented and the parameters of seven reverse Algols are listed. The evolution of Algols and reverse Algols is discussed. It is suggested that, because reverse Algols represent the premass-reversal semidetached phase of close binary evolution, the evolutionary time scale between regular and reverse Algols is the ratio of the number of confirmed systems of these two Algol types.

Studies of switching structures in ferroelectric liquid crystal devices

International Nuclear Information System (INIS)

Pabla, D.S.

1998-01-01

The fast, bistable electro-optic response of ferroelectric liquid crystal (FLC) devices has made them prime candidates for use in display applications. However, before these applications can become widely commercially viable a number of key issues relating to the switching within these devices need to be addressed. One of these is related to the fact that while there has been much work done on modelling the switching process in FLC devices, with some moderate success, in the main these models have not accurately accounted for the physical processes taking place. In order to rectify this situation we present a simple, multi-variable approach which includes important physical phenomenon such as stressed states, partial and domain switching. Through using this model we learn more about the dynamic molecular profiles which may exist in devices, and use this as a springboard to undertake a comprehensive theoretical and experimental study of the molecular profiles of chevron structures under different types of addressing pulses and voltages. This entails modelling the dynamic profiles using a simple non flow reorientation theory and comparing these simulations directly with experimental data obtained through the use of two different optical characterisation techniques. Our findings show quite conclusively that for monopolar addressing within low and high voltage regimes and for low voltage bipolar pulses during the early stages of switching, the dynamic reorientation near the surfaces and central regions of the device lags the reorientation within the bulk. The reverse however being true for the high voltage bipolar addressing case. These results for chevron structures differ from previous theoretical predictions made by others using equations derived from the flow coupled chiral smectic C continuum theory. These flow coupled simulations however, refer to reorientation in bookshelf structures rather than the chevron type structures thought to exist in FLC devices. As

Studies of switching structures in ferroelectric liquid crystal devices

Energy Technology Data Exchange (ETDEWEB)

Pabla, D.S

1998-07-01

The fast, bistable electro-optic response of ferroelectric liquid crystal (FLC) devices has made them prime candidates for use in display applications. However, before these applications can become widely commercially viable a number of key issues relating to the switching within these devices need to be addressed. One of these is related to the fact that while there has been much work done on modelling the switching process in FLC devices, with some moderate success, in the main these models have not accurately accounted for the physical processes taking place. In order to rectify this situation we present a simple, multi-variable approach which includes important physical phenomenon such as stressed states, partial and domain switching. Through using this model we learn more about the dynamic molecular profiles which may exist in devices, and use this as a springboard to undertake a comprehensive theoretical and experimental study of the molecular profiles of chevron structures under different types of addressing pulses and voltages. This entails modelling the dynamic profiles using a simple non flow reorientation theory and comparing these simulations directly with experimental data obtained through the use of two different optical characterisation techniques. Our findings show quite conclusively that for monopolar addressing within low and high voltage regimes and for low voltage bipolar pulses during the early stages of switching, the dynamic reorientation near the surfaces and central regions of the device lags the reorientation within the bulk. The reverse however being true for the high voltage bipolar addressing case. These results for chevron structures differ from previous theoretical predictions made by others using equations derived from the flow coupled chiral smectic C continuum theory. These flow coupled simulations however, refer to reorientation in bookshelf structures rather than the chevron type structures thought to exist in FLC devices. As

Reversible pH Stimulus-Response Material Based on Amphiphilic Block Polymer Self-Assembly and Its Electrochemical Application

Directory of Open Access Journals (Sweden)

Tianyi Wang

2016-06-01

Full Text Available Stimulus-responsive microporous solid thin films were successfully fabricated by simple molecular self-assembly via an amphiphilic block polymer, polystryene–b–polyacrylic acid (PS–b–PAA. The solid thin films exhibit different surface morphologies in response to external stimuli, such as environments with different pH values in aqueous solutions. The experiments have successfully applied atomic force microscope (AFM technology to observe in-situ surface morphological changes. There is a reversible evolution of the microstructures in buffer solutions over a pH range of 2.4–9.2. These observations have been explained by positing that there is no conventional PAA swelling but that the PAA chains in the micropores stretch and contract with changes in the pH of the solution environment. The hydrophobicity of the solid thin film surface was transformed into super-hydrophilicity, as captured by optical contact angle measurements. The stimulus-responsive dynamics of pore sizes was described by a two-stage mechanism. A promising electrochemical application of this film is suggested via combination with an electrochemical impedance technique. This study is aimed at strategies for the functionalization of stimulus-responsive microporous solid thin films with reversible tunable surface morphologies, and exploring new smart materials with switch-on/switch-off behavior.

Energy storage, compression, and switching. Vol. 2

International Nuclear Information System (INIS)

Nardi, V.; Bostick, W.H.; Sahlin, H.

1983-01-01

This book is a compilation of papers presented at the Second International Conference on Energy Storage, Compression, and Switching, which was held in order to assemble active researchers with a major interest in plasma physics, electron beams, electric and magnetic energy storage systems, high voltage and high current switches, free-electron lasers, and pellet implosion plasma focus. Topics covered include: Slow systems: 50-60 Hz machinery, homopolar generators, slow capacitors, inductors, and solid state switches; Intermediate systems: fast capacitor banks; superconducting storage and switching; gas, vacuum, and dielectric switching; nonlinear (magnetic) switching; imploding liners capacitors; explosive generators; and fuses; and Fast systems: Marx, Blumlein, oil, water, and pressurized water dielectrics; switches; magnetic insulation; electron beams; and plasmas

A level switch with a sound tube

OpenAIRE

赤池, 誠規

2017-01-01

Level switches are sensor with an electrical contact output at a specific liquid, powder or bulk level. Most of traditional level switches are not suitable for harsh environments. The level switch in this study connects a loudspeaker on top end of the sound tube. When liquid, powder or bulk closes bottom end of the sound tube, the level switch turns on. The level switch is suitable for harsh environments and easy to install. The aim of this study is to propose a level switch with a sound tube...

Switching adolescent high-fat diet to adult control diet restores neurocognitive alterations

Directory of Open Access Journals (Sweden)

Chloe Boitard

2016-11-01

Full Text Available In addition to metabolic and cardiovascular disorders, obesity is associated with adverse cognitive and emotional outcomes. Its growing prevalence in adolescents is particularly alarming since this is a period of ongoing maturation for brain structures (including the hippocampus and amygdala and for the hypothalamic-pituitary-adrenal (HPA stress axis, which is required for cognitive and emotional processing. We recently demonstrated that adolescent, but not adult, high-fat diet (HF exposure leads to impaired hippocampal function and enhanced amygdala function through HPA axis alteration (Boitard et al., 2014; Boitard et al., 2012; Boitard et al., 2015. Here, we assessed whether the effects of adolescent HF consumption on brain function are permanent or reversible. After adolescent exposure to HF, switching to a standard chow diet restored levels of hippocampal neurogenesis and normalized enhanced HPA axis reactivity, amygdala activity and avoidance memory. Therefore, while the adolescent period is highly vulnerable to the deleterious effects of diet-induced obesity, adult exposure to a standard diet appears sufficient to reverse alterations of brain function.

Superconductivity, energy storage and switching

International Nuclear Information System (INIS)

Laquer, H.L.

1974-01-01

The phenomenon of superconductivity can contribute to the technology of energy storage and switching in two distinct ways. On one hand the zero resistivity of the superconductor can produce essentially infinite time constants so that an inductive storage system can be charged from very low power sources. On the other hand, the recovery of finite resistivity in a normal-going superconducting switch can take place in extremely short times, so that a system can be made to deliver energy at a very high power level. Topics reviewed include: physics of superconductivity, limits to switching speed of superconductors, physical and engineering properties of superconducting materials and assemblies, switching methods, load impedance considerations, refrigeration economics, limitations imposed by present day and near term technology, performance of existing and planned energy storage systems, and a comparison with some alternative methods of storing and switching energy. (U.S.)

Dialysis water treated by reverse osmosis decreases the levels of C-reactive protein in uremic patients

Directory of Open Access Journals (Sweden)

F.S. Thomé

2005-05-01

Full Text Available Atherosclerosis is a major complication of chronic renal failure. Microinflammation is involved in atherogenesis and is associated with uremia and dialysis. The role of dialysate water contamination in inducing inflammation has been debated. Our aim was to study inflammatory markers in patients on chronic dialysis, before and 3 to 6 months after switching the water purification system from deionization to reverse osmosis. Patients had demographic, clinical and nutritional information collected and blood drawn for determination of albumin, ferritin, C-reactive protein (CRP, interleukin-6, and tumor necrosis factor-alpha in both situations. Acceptable levels of water purity were less than 200 colony-forming units of bacteria and less than 1 ng/ml of endotoxin. Sixteen patients died. They had higher median CRP (26.6 vs 11.2 mg/dl, P = 0.007 and lower median albumin levels (3.1 vs 3.9 g/l, P < 0.05 compared to the 31 survivors. Eight patients were excluded because of obvious inflammatory conditions. From the 23 remaining patients (mean age ± SD: 51.3 ± 13.9 years, 18 had a decrease in CRP after the water treatment system was changed. Overall, median CRP was lower with reverse osmosis than with deionization (13.2 vs 4.5 mg/l, P = 0.022, N = 23. There was no difference in albumin, cytokines, subjective global evaluation, or clinical and biochemical parameters. In conclusion, uremic patients presented a clinically significant reduction in CRP levels when dialysate water purification system switched from deionization to reverse osmosis. It is possible that better water treatments induce less inflammation and eventually less atherosclerosis in hemodialysis patients.

Effects of the shape anisotropy and biasing field on the magnetization reversal process of the diamond-shaped NiFe nano films

Science.gov (United States)

Xu, Sichen; Yin, Jianfeng; Tang, Rujun; Zhang, Wenxu; Peng, Bin; Zhang, Wanli

2017-11-01

The effects of the planar shape anisotropy and biasing field on the magnetization reversal process (MRP) of the diamond-shaped NiFe nano films have been investigated by micromagnetic simulations. Results show that when the length to width ratio (LWR) of the diamond-shaped film is small, the MRP of the diamond-shaped films are sensitive to LWR. But when LWR is larger than 2, a stable domain switching mode is observed which nucleates from the center of the diamond and then expands to the edges. At a fixed LWR, the magnitude of the switching fields decrease with the increase of the biasing field, but the domain switching mode is not affected by the biasing field. Further analysis shows that demagnetization energy dominates over the MRP of the diamond-shaped films. The above LWR dependence of MRP can be well explained by a variation of the shape anisotropic factor with LWR.

Optical Multidimensional Switching for Data Center Networks

DEFF Research Database (Denmark)

Kamchevska, Valerija

2017-01-01

. Software controlled switching using an on-chip integrated fiber switch is demonstrated and enabling of additional network functionalities such as multicast and optical grooming is experimentally confirmed. Altogether this work demonstrates the potential of optical switching technologies...... for the purpose of deploying optical switching within the network. First, the Hi-Ring data center architecture is proposed. It is based on optical multidimensional switching nodes that provide switching in hierarchically layered space, wavelength and time domain. The performance of the Hi-Ring architecture...... is evaluated experimentally and successful switching of both high capacity wavelength connections and time-shared subwavelengthconnections is demonstrated. Error-free performance is also achieved when transmitting 7 Tbit/s using multicore fiber, confirming the ability to scale the network. Moreover...

Pinning Synchronization of Switched Complex Dynamical Networks

Directory of Open Access Journals (Sweden)

Liming Du

2015-01-01

Full Text Available Network topology and node dynamics play a key role in forming synchronization of complex networks. Unfortunately there is no effective synchronization criterion for pinning synchronization of complex dynamical networks with switching topology. In this paper, pinning synchronization of complex dynamical networks with switching topology is studied. Two basic problems are considered: one is pinning synchronization of switched complex networks under arbitrary switching; the other is pinning synchronization of switched complex networks by design of switching when synchronization cannot achieved by using any individual connection topology alone. For the two problems, common Lyapunov function method and single Lyapunov function method are used respectively, some global synchronization criteria are proposed and the designed switching law is given. Finally, simulation results verify the validity of the results.

Voltage manipulation of the magnetization reversal in Fe/n-GaAs/piezoelectric heterostructure

Energy Technology Data Exchange (ETDEWEB)

Li, Yuanyuan; Luo, Wengang; Zhu, Lijun; Zhao, Jianhua; Wang, Kaiyou, E-mail: kywang@semi.ac.cn

2015-02-01

We carefully investigated the in-plane magnetization reversal and corresponding magnetic domain structures in Fe/n-GaAs/piezoelectric heterostructure using longitudinal magneto-optical Kerr microscopy. The coexistence of the in-plane <100> cubic and [11{sup ¯}0] uniaxial magnetic anisotropy was observed in this system at virgin state. The piezo voltages can effectively manipulate the magnetic properties of the Fe/n-GaAs/piezoelectric heterostructure, where the manipulation of two-jump to one-jump magnetization switching during the magnetic reversal was achieved with magnetic field applied in [100] direction. Our findings on manipulation of ferromagnetization in this heterostructure could be important for future metal-semiconductor spintronic applications. The additional uniaxial anisotropy induced by piezo voltages obtained at ±75 V is ±1.4×10{sup 3} J/m{sup 3}. - Highlights: • In this work, we use piezo voltages not only realize the significant change of coercivity but also effectively manipulate the magnetization transition from one step to two steps during magnetic reversal, indicating that the piezo-voltages can be used to effectively control the magnetization reversal. • The additional uniaxial anisotropy induced by piezo voltages at +/−75 V are +/−1.4×10{sup 3} J/m{sup 3}. This work could be very used for future metal-semiconductor spintronic devices.

Managing Reverse Logistics or Reversing Logistics Management?

OpenAIRE

Brito, Marisa

2004-01-01

textabstractIn the past, supply chains were busy fine-tuning the logistics from raw material to the end customer. Today an increasing flow of products is going back in the chain. Thus, companies have to manage reverse logistics as well.This thesis contributes to a better understanding of reverse logistics. The thesis brings insights on reverse logistics decision-making and it lays down theoretical principles for reverse logistics as a research field.In particular it puts together a framework ...

Promising and Reversible Electrolyte with Thermal Switching Behavior for Safer Electrochemical Storage Devices.

Science.gov (United States)

Shi, Yunhui; Zhang, Qian; Zhang, Yan; Jia, Limin; Xu, Xinhua

2018-02-28

A major stumbling block in large-scale adoption of high-energy-density electrochemical devices has been safety issues. Methods to control thermal runaway are limited by providing a one-time thermal protection. Herein, we developed a simple and reversible thermoresponsive electrolyte system that is efficient to shutdown the current flow according to temperature changes. The thermal management is ascribed to the thermally activated sol-gel transition of methyl cellulose solution, associated with the concentration of ions that can move between isolated chains freely or be restricted by entangled molecular chains. We studied the effect of cellulose concentration, substituent types, and operating temperature on the electrochemical performance, demonstrating an obvious capacity loss up to 90% approximately of its initial value. Moreover, this is a cost-effective approach that has the potential for use in practical electrochemical storage devices.

Wide Bandgap Extrinsic Photoconductive Switches

Energy Technology Data Exchange (ETDEWEB)

Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

2012-01-20

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

Electron collisions in gas switches

International Nuclear Information System (INIS)

Christophorou, L.G.

1989-01-01

Many technologies rely on the conduction/insulation properties of gaseous matter for their successful operation. Many others (e.g., pulsed power technologies) rely on the rapid change (switching or modulation) of the properties of gaseous matter from an insulator to a conductor and vice versa. Studies of electron collision processes in gases aided the development of pulsed power gas switches, and in this paper we shall briefly illustrate the kind of knowledge on electron collision processes which is needed to optimize the performance of such switching devices. To this end, we shall refer to three types of gas switches: spark gap closing, self-sustained diffuse discharge closing, and externally-sustained diffuse discharge opening. 24 refs., 15 figs., 2 tabs

47 CFR 69.106 - Local switching.

Science.gov (United States)

2010-10-01

... foreign services that use local exchange switching facilities. (c) If end users of an interstate or... local exchange carriers shall establish rate elements for local switching as follows: (1) Price cap... use local exchange switching facilities for the provision of interstate or foreign services. The...

Proceedings of the switched power workshop

International Nuclear Information System (INIS)

Fernow, R.C.

1988-01-01

These proceedings contain most of the presentations given at a workshop on the current state of research in techniques for switched power acceleration. The proceedings are divided, as was the workshop itself, into two parts. Part 1, contains the latest results from a number of groups active in switched power research. The major topic here is a method for switching externally supplied power onto a transmission line. Advocates for vacuum photodiode switching, solid state switching, gas switching, and synthetic pulse generation are all presented. Other important areas of research described in this section concern: external electrical and laser pulsing systems; the properties of the created electromagnetic pulse; structures used for transporting the electromagnetic pulse to the region where the electron beam is located; and possible applications. Part 2 of the proceedings considers the problem of designing a high brightness electron gun using switched power as the power source. This is an important first step in demonstrating the usefulness of switched power techniques for accelerator physics. In addition such a gun could have immediate practical importance for advanced acceleration studies since the brightness could exceed that of present sources by several orders of magnitude. I would like to take this opportunity to thank Kathleen Tuohy and Patricia Tuttle for their assistance in organizing and running the workshop. Their tireless efforts contribute greatly to a very productive meeting

Failure of botulinum toxin injection for neurogenic detrusor overactivity: Switch of toxin versus second injection of the same toxin.

Science.gov (United States)

Peyronnet, Benoit; Castel-Lacanal, Evelyne; Manunta, Andréa; Roumiguié, Mathieu; Marque, Philippe; Rischmann, Pascal; Gamé, Xavier

2015-12-01

To evaluate the efficacy of a second injection of the same toxin versus switching to a different botulinum toxin A after failure of a first detrusor injection in patients with neurogenic detrusor overactivity. The charts of all patients who underwent detrusor injections of botulinum toxin A (either abobotulinumtoxinA or onabotulinumtoxinA) for the management of neurogenic detrusor overactivity at a single institution were retrospectively reviewed. Patients in whom a first detrusor injection had failed were included in the present study. They were managed by a second injection of the same toxin at the same dosage or by a new detrusor injection using a different botulinum toxin A. Success was defined as a resolution of urgency, urinary incontinence and detrusor overactivity in a patient self-catheterizing seven times or less per 24 h. A total of 58 patients were included for analysis. A toxin switch was carried out in 29 patients, whereas the other 29 patients received a reinjection of the same toxin at the same dose. The success rate was higher in patients who received a toxin switch (51.7% vs. 24.1%, P = 0.03). Patients treated with a switch from abobotulinumtoxinA to onabotulinumtoxinA and those treated with a switch from onabotulinumtoxinA to abobotulinumtoxinA had similar success rates (52.9% vs. 50%, P = 0.88). After failure of a first detrusor injection of botulinum toxin for neurogenic detrusor overactivity, a switch to a different toxin seems to be more effective than a second injection of the same toxin. The replacement of onabotulinumtoxin by abobotulinumtoxin or the reverse provides similar results. © 2015 The Japanese Urological Association.

Reversible switching of the sol- gel transition with ultrasound in rhodium(I) and iridium(I) coordination networks

NARCIS (Netherlands)

Paulusse, J.M.J.; Beek, van D.J.M.; Sijbesma, R.P.

2007-01-01

Reversible coordination networks were prepared by combining diphenylphosphinite telechelic polytetrahydrofuran (2) with [RhCl(COD)]2 or [IrCl(COD)]2 in chloroform. Both systems resulted in stable gels at concentrations above 50 and 30 g/L for the rhodium(I) and iridium(I) networks, respectively. The

Selectivity switch in the synthesis of vinylgold(I) intermediates

KAUST Repository

Hashmi, A. Stephen K

2011-11-28

An unexpected regioselectivity reversal was observed in the synthesis of vinylgold(I) complexes from propargyl carboxamides. The use of [Au(IPr)(OH)] affords preferentially vinylgold(I) complexes resulting from a 5-exo-dig cyclization, whereas the use [Au(IPr)]+ species, generated in situ starting from [Au(IPr)(Cl)] and AgOTf, leads to vinylgold(I) complexes which form via a 6-endo-dig cyclization, This unexpected "selectivity switch" for this cyclization led us to propose two different reaction pathways enabling the formation of the two different products. One mechanism involves the [Au(IPr)]+ species with "classical" I activation of the alkyne framework of the carboxamides, and the second represents an "unusual" use of the basic Brønsted character of [Au(IPr)(OH)]. Mechanistic and DFT studies support the mechanistic hypotheses. © 2011 American Chemical Society.

Selectivity switch in the synthesis of vinylgold(I) intermediates

KAUST Repository

Hashmi, A. Stephen K; Schuster, Andreas M.; Gaillard, Sylvain; Cavallo, Luigi; Poater, Albert; Nolan, Steven P.

2011-01-01

An unexpected regioselectivity reversal was observed in the synthesis of vinylgold(I) complexes from propargyl carboxamides. The use of [Au(IPr)(OH)] affords preferentially vinylgold(I) complexes resulting from a 5-exo-dig cyclization, whereas the use [Au(IPr)]+ species, generated in situ starting from [Au(IPr)(Cl)] and AgOTf, leads to vinylgold(I) complexes which form via a 6-endo-dig cyclization, This unexpected "selectivity switch" for this cyclization led us to propose two different reaction pathways enabling the formation of the two different products. One mechanism involves the [Au(IPr)]+ species with "classical" I activation of the alkyne framework of the carboxamides, and the second represents an "unusual" use of the basic Brønsted character of [Au(IPr)(OH)]. Mechanistic and DFT studies support the mechanistic hypotheses. © 2011 American Chemical Society.

Resistance switching memory in perovskite oxides

International Nuclear Information System (INIS)

Yan, Z.B.; Liu, J.-M.

2015-01-01

The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons and the stable crystal structure, which brings out multifunctionality such as ferroelectric, multiferroic, superconductor, and colossal magnetoresistance/electroresistance effect, etc. The existence of rich electronic phases, metal–insulator transition and the nonstoichiometric oxygen in perovskite oxide provides good platforms to insight into the resistive switching mechanisms. In this review, we first introduce the general characteristics of the resistance switching effects, the operation methods and the storage media. Then, the experimental evidences of conductive filaments, the transport and switching mechanisms, and the memory performances and enhancing methods of perovskite oxide based filamentary RRAM cells have been summarized and discussed. Subsequently, the switching mechanisms and the performances of the uniform RRAM cells associating with the carrier trapping/detrapping and the ferroelectric polarization switching have been discussed. Finally, the advices and outlook for further investigating the resistance switching and enhancing the memory performances are given

Clocking Scheme for Switched-Capacitor Circuits

DEFF Research Database (Denmark)

Steensgaard-Madsen, Jesper

1998-01-01

A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed.......A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed....

Manually operated coded switch

International Nuclear Information System (INIS)

Barnette, J.H.

1978-01-01

The disclosure related to a manually operated recodable coded switch in which a code may be inserted, tried and used to actuate a lever controlling an external device. After attempting a code, the switch's code wheels must be returned to their zero positions before another try is made

Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

Science.gov (United States)

Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

2017-12-01

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

Manufacture of Radio Frequency Micromachined Switches with Annealing

Directory of Open Access Journals (Sweden)

Cheng-Yang Lin

2014-01-01

Full Text Available The fabrication and characterization of a radio frequency (RF micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

Manufacture of radio frequency micromachined switches with annealing.

Science.gov (United States)

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-17

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

Observer-Based Robust Control of Uncertain Switched Fuzzy Systems with Combined Switching Controller

Directory of Open Access Journals (Sweden)

Hong Yang

2013-01-01

Full Text Available The observer-based robust control for a class of switched fuzzy (SF time-delay systems involving uncertainties and external disturbances is investigated in this paper. A switched fuzzy system, which differs from existing ones, is firstly employed to describe a nonlinear system. Next, a combined switching controller is proposed. The designed controller based on the observer instead of the state information integrates the advantages of both the switching controllers and the supplementary controllers but eliminates their disadvantages. The proposed controller provides good performance during the transient period, and the chattering effect is removed when the system state approaches the origin. Sufficient condition for the solvability of the robust control problem is given for the case that the state of system is not available. Since convex combination techniques are used to derive the delay-independent criteria, some subsystems are allowed to be unstable. Finally, various comparisons of the elaborated examples are conducted to demonstrate the effectiveness of the proposed control design approach.

Synchronization in complex networks with switching topology

International Nuclear Information System (INIS)

Wang, Lei; Wang, Qing-guo

2011-01-01

This Letter investigates synchronization issues of complex dynamical networks with switching topology. By constructing a common Lyapunov function, we show that local and global synchronization for a linearly coupled network with switching topology can be evaluated by the time average of second smallest eigenvalues corresponding to the Laplacians of switching topology. This result is quite powerful and can be further used to explore various switching cases for complex dynamical networks. Numerical simulations illustrate the effectiveness of the obtained results in the end. -- Highlights: → Synchronization of complex networks with switching topology is investigated. → A common Lyapunov function is established for synchronization of switching network. → The common Lyapunov function is not necessary to monotonically decrease with time. → Synchronization is determined by the second smallest eigenvalue of its Laplacian. → Synchronization criterion can be used to investigate various switching cases.

Research and embedded implementation of Layer 3 switch

Science.gov (United States)

Song, Jin; Cheng, Zijing

2009-12-01

In the internetworking world, switches and routers have been deployed for workgroup and enterprise connectivity. In the past, switches mainly operated at Layer 2 (they were extensions of bridges), while routers were clearly Layer3 devices. Recently, the line has blurred and switches operating at Layer 3 are becoming more popular. This paper explains the Linux Bridge, Layer 2 Switches, Virtual LAN (VLAN) and Layer 3 Switches. The flow chart of Layer 3 switches and working routine related to Layer 3 switch technology were investigated in detail. This paper presents a new method to implement layer 3 switching that is entirely accomplished in software and is embedded implemented by code transplanting based on PowerPC 460GT platform.

Determination of the saturation magnetization, anisotropy field, mean field interaction, and switching field distribution for nanocrystalline hard magnets

International Nuclear Information System (INIS)

McCallum, R. William

2005-01-01

For a uniaxial nanocrystalline magnetic material, the determination of the saturation magnetization, M s , requires measurements of the magnetization at fields which exceed the anisotropy field. For a typical RE-Tm compound, where RE=rare earth and Tm=transition metal, this may require fields above 7 T if the approach to saturation law is used. However for an isotropic material composed of a random distribution of non-interacting uniaxial grains, both M s and the anisotropy filed, H a , may be determined by fitting the Stoner-Wohlfarth (SW) model (Philos. Trans. Roy. Soc. 240 (1948) 599) to the reversible part of the demagnetization curve in the first quadrant. Furthermore, using the mean field interaction model of Callen, Liu and Cullen [2], a quantitative measure of the interaction strength for interacting particles may be determined. In conjunction with an analytical fit to the first quadrant demagnetization curve of the SW model, this allows M s , H a and the mean field interaction constant of a nanocrystalline magnet to be determined from measurements below 5 T. Furthermore, comparison of the model solution for the reversible magnetization with experimental data in the 2nd and 3rd quadrants allows the accurate determination of the switching field distribution. In many cases the hysteresis loop may be accurately described by a normal distribution of switching fields

Rac1 switching at the right time and location is essential for Fcγ receptor-mediated phagosome formation.

Science.gov (United States)

Ikeda, Yuka; Kawai, Katsuhisa; Ikawa, Akira; Kawamoto, Kyoko; Egami, Youhei; Araki, Nobukazu

2017-08-01

Lamellipodia are sheet-like cell protrusions driven by actin polymerization mainly through Rac1, a GTPase molecular switch. In Fcγ receptor-mediated phagocytosis of IgG-opsonized erythrocytes (IgG-Es), Rac1 activation is required for lamellipodial extension along the surface of IgG-Es. However, the significance of Rac1 deactivation in phagosome formation is poorly understood. Our live-cell imaging and electron microscopy revealed that RAW264 macrophages expressing a constitutively active Rac1 mutant showed defects in phagocytic cup formation, while lamellipodia were formed around IgG-Es. Because activated Rac1 reduced the phosphorylation levels of myosin light chains, failure of the cup formation is probably due to inhibition of actin/myosin II contractility. Reversible photo-manipulation of the Rac1 switch in macrophages fed with IgG-Es could phenocopy two lamellipodial motilities: outward-extension and cup-constriction by Rac1 ON and OFF, respectively. In conjunction with fluorescence resonance energy transfer imaging of Rac1 activity, we provide a novel mechanistic model of phagosome formation spatiotemporally controlled by Rac1 switching within a phagocytic cup. © 2017. Published by The Company of Biologists Ltd.

Combining SDM-Based Circuit Switching with Packet Switching in a Router for On-Chip Networks

Directory of Open Access Journals (Sweden)

Angelo Kuti Lusala

2012-01-01

Full Text Available A Hybrid router architecture for Networks-on-Chip “NoC” is presented, it combines Spatial Division Multiplexing “SDM” based circuit switching and packet switching in order to efficiently and separately handle both streaming and best-effort traffic generated in real-time applications. Furthermore the SDM technique is combined with Time Division Multiplexing “TDM” technique in the circuit switching part in order to increase path diversity, thus improving throughput while sharing communication resources among multiple connections. Combining these two techniques allows mitigating the poor resource usage inherent to circuit switching. In this way Quality of Service “QoS” is easily provided for the streaming traffic through the circuit-switched sub-router while the packet-switched sub-router handles best-effort traffic. The proposed hybrid router architectures were synthesized, placed and routed on an FPGA. Results show that a practicable Network-on-Chip “NoC” can be built using the proposed router architectures. 7 × 7 mesh NoCs were simulated in SystemC. Simulation results show that the probability of establishing paths through the NoC increases with the number of sub-channels and has its highest value when combining SDM with TDM, thereby significantly reducing contention in the NoC.

On The Snubber Influence To The Switching And Conduction Losses In A Converter Using Switched Capacitor

Directory of Open Access Journals (Sweden)

Viorel DUGAN

2002-12-01

Full Text Available The paper deals to design and to compute the snubber parameters influence on the switching and conduction losses of the transistors (IGBT used as bidirectional switches in a converter with switched capacitor. The converter was modelled with difference equations, and the transistors during turn-on and turn-off processes were simulated by dynamically varying resistance models. The energy loss per switching, commutation time, the variation of the transistor voltage etc. and the influence of snubber parameters in each of these cases are shown in the context of a converter used as a 50Hz reactive power controller unit

High-voltage high-current triggering vacuum switch

International Nuclear Information System (INIS)

Alferov, D.F.; Bunin, R.A.; Evsin, D.V.; Sidorov, V.A.

2012-01-01

Experimental investigations of switching and breaking capacities of the new high current triggered vacuum switch (TVS) are carried out at various parameters of discharge current. It has been shown that the high current triggered vacuum switch TVS can switch repeatedly a current from units up to ten kiloampers with duration up to ten millisecond [ru

Stochastic simulation of thermally assisted magnetization reversal in sub-100 nm dots with perpendicular anisotropy

International Nuclear Information System (INIS)

Purnama, Budi; Koga, Masashi; Nozaki, Yukio; Matsuyama, Kimihide

2009-01-01

Thermally assisted magnetization reversal of sub-100 nm dots with perpendicular anisotropy has been investigated using a micromagnetic Langevin model. The performance of the two different reversal modes of (i) a reduced barrier writing scheme and (ii) a Curie point writing scheme are compared. For the reduced barrier writing scheme, the switching field H swt decreases with an increase in writing temperature but is still larger than that of the Curie point writing scheme. For the Curie point writing scheme, the required threshold field H th , evaluated from 50 simulation results, saturates at a value, which is not simply related to the energy barrier height. The value of H th increases with a decrease in cooling time owing to the dynamic aspects of the magnetic ordering process. Dependence of H th on material parameters and dot sizes has been systematically studied

Sequential Effects in Deduction: Cost of Inference Switch

Science.gov (United States)

Milan, Emilio G.; Moreno-Rios, Sergio; Espino, Orlando; Santamaria, Carlos; Gonzalez-Hernandez, Antonio

2010-01-01

The task-switch paradigm has helped psychologists gain insight into the processes involved in changing from one activity to another. The literature has yielded consistent results about switch cost reconfiguration (abrupt offset in regular task-switch vs. gradual reduction in random task-switch; endogenous and exogenous components of switch cost;…

Aurora oil switch upgrade program

International Nuclear Information System (INIS)

Warren, T.

1989-03-01

This report describes the short pulse synchronization requirements, the original Aurora trigger scheme, and the PI/SNLA approach to improving the synchronization. It also describes the oil switching design study undertaken as the first phase of the program. A discussion of oil-switch closure analysis and the conceptual design motivated by this analysis are presented. This paper also describes the oil-switch trigger pulser tests required to validate the concept. This includes the design of the testing facility, a description of the test goals, and a discussion of the results. This paper finally describes oil-switch trigger pulser testing on one of the four Aurora Blumlein modules, which includes the hardware design and operation, the testing goals, hardware installation, and test results. 9 refs., 26 figs

Switch junction sequences in PMS2-deficient mice reveal a microhomology-mediated mechanism of Ig class switch recombination

Science.gov (United States)

Ehrenstein, Michael R.; Rada, Cristina; Jones, Anne-Marie; Milstein, César; Neuberger, Michael S.

2001-01-01

Isotype switching involves a region-specific, nonhomologous recombinational deletion that has been suggested to occur by nonhomologous joining of broken DNA ends. Here, we find increased donor/acceptor homology at switch junctions from PMS2-deficient mice and propose that class switching can occur by microhomology-mediated end-joining. Interestingly, although isotype switching and somatic hypermutation show many parallels, we confirm that PMS2 deficiency has no major effect on the pattern of nucleotide substitutions generated during somatic hypermutation. This finding is in contrast to MSH2 deficiency. With MSH2, the altered pattern of switch recombination and hypermutation suggests parallels in the mechanics of the two processes, whereas the fact that PMS2 deficiency affects only switch recombination may reflect differences in the pathways of break resolution. PMID:11717399

The imperfect price reversibility of non-transport oil demand in the OECD

International Nuclear Information System (INIS)

Dargay, J.; Gately, D.

1995-01-01

This paper examines the price reversibility of OECD non-transport oil demand and its components: residual (heavy) fuel oil, non-transport distillates and other non-transport oil products. Our purpose is to determine the extent to which the reductions in demand following the oil price increases of the 1970s have been - and will be - reversed by the price cuts of the 1980s. The analysis is based on an econometric model which utilizes price decomposition methods to measure separately the effects of price increases and price decreases. These methods allow empirical testing of irreversibility and hysteresis, and should be applicable in other areas of economics where asymmetry of response or persistence of effect are evident. Based on the statistical evidence, we reject the conventional specification of demand being perfectly price reversible. We conclude that the response to the price cuts of the 1980s has been significantly smaller than to the price increases of the 1970s. Demand has followed a ratchet process: price increases reduced demand substantially when demanders conserved and switched away from oil, but price cuts did not reverse this process completely, if at all. This has important implications for projections of oil demand, especially under low price assumptions: the OECD's dependency on oil will not increase as much as some analysts may have feared. There is, however, another aspect of imperfect price reversibility: the possibilities of adjusting to future price rises may not be as great as they have been in the past. The easiest and least costly demand savings have already been made, and oil has been replaced by other energy sources in many uses: what's done is done. (author)

Ultra High-Speed Radio Frequency Switch Based on Photonics.

Science.gov (United States)

Ge, Jia; Fok, Mable P

2015-11-26

Microwave switches, or Radio Frequency (RF) switches have been intensively used in microwave systems for signal routing. Compared with the fast development of microwave and wireless systems, RF switches have been underdeveloped particularly in terms of switching speed and operating bandwidth. In this paper, we propose a photonics based RF switch that is capable of switching at tens of picoseconds speed, which is hundreds of times faster than any existing RF switch technologies. The high-speed switching property is achieved with the use of a rapidly tunable microwave photonic filter with tens of gigahertz frequency tuning speed, where the tuning mechanism is based on the ultra-fast electro-optics Pockels effect. The RF switch has a wide operation bandwidth of 12 GHz and can go up to 40 GHz, depending on the bandwidth of the modulator used in the scheme. The proposed RF switch can either work as an ON/OFF switch or a two-channel switch, tens of picoseconds switching speed is experimentally observed for both type of switches.

Compound semiconductor optical waveguide switch

Science.gov (United States)

Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

2003-06-10

An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

Isolated converter with synchronized switching leg

NARCIS (Netherlands)

2003-01-01

An amplification device is disclosed providing a way of integrating a switch mode power supply and a class D amplifier (switch mode amplifier). This results in the usage of basically one magnetic component (1), one major energy storage element (4) and switches (20, 30) that are controlled in such a

Magnetization reversal of the transverse domain wall confined between two clusters of magnetic impurities in a ferromagnetic planar nanowire

Energy Technology Data Exchange (ETDEWEB)

Toscano, D., E-mail: danilotoscano@fisica.ufjf.br [Departamento de Física, Laboratório de Simulação Computacional, Universidade Federal de Juiz de Fora, Juiz de Fora, Minas Gerais 36036–330 (Brazil); Leonel, S.A., E-mail: sidiney@fisica.ufjf.br [Departamento de Física, Laboratório de Simulação Computacional, Universidade Federal de Juiz de Fora, Juiz de Fora, Minas Gerais 36036–330 (Brazil); Coura, P.Z., E-mail: pablo@fisica.ufjf.br [Departamento de Física, Laboratório de Simulação Computacional, Universidade Federal de Juiz de Fora, Juiz de Fora, Minas Gerais 36036–330 (Brazil); Sato, F., E-mail: sjfsato@fisica.ufjf.br [Departamento de Física, Laboratório de Simulação Computacional, Universidade Federal de Juiz de Fora, Juiz de Fora, Minas Gerais 36036–330 (Brazil); Costa, B.V., E-mail: bvc@fisica.ufmg.br [Departamento de Física, Laboratório de Simulação, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123–970 (Brazil); Vázquez, M., E-mail: mvazquez@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC. 28049 Madrid (Spain)

2016-12-01

Numerical simulations have been used to investigate the polarity reversal of the transverse domain wall in rectangular magnetic nanowires and the stabilization of the domain wall position after occurring the polarity reversal. In order to control the wall position we have considered two clusters of magnetic impurities, identical and equidistant from the nanowire width axis. Traps of pinning and blocking for the transverse domain wall can be originated from magnetic impurities, consisting of a local variation of the exchange constant. Under suitable excitation amplitudes it is possible to switch the polarity of the transverse domain wall by applying a nanosecond axial magnetic field pulse in a fast and controllable way. - Highlights: • Traps for pinning and blocking transverse domain walls are proposed. • The traps consisting of localized modifications of the magnetic properties. • The wall polarity can be reversed in a fast and controllable way.

Wireless Nanoionic-Based Radio Frequency Switch

Science.gov (United States)

Nessel, James A. (Inventor); Miranda, Felix A (Inventor)

2017-01-01

A nanoionic switch connected to one or more rectenna modules is disclosed. The rectenna module is configured to receive a wireless signal and apply a first bias to change a state of the nanoionic switch from a first state to a second state. The rectenna module can receive a second wireless signal and apply a second bias to change the nanoionic switch from the second state back to the first state. The first bias is generally opposite of the first bias. The rectenna module accordingly permits operation of the nanoionic switch without onboard power.

Simplified design of switching power supplies

CERN Document Server

Lenk, John

1995-01-01

* Describes the operation of each circuit in detail * Examines a wide selection of external components that modify the IC package characteristics * Provides hands-on, essential information for designing a switching power supply Simplified Design of Switching Power Supplies is an all-inclusive, one-stop guide to switching power-supply design. Step-by-step instructions and diagrams render this book essential for the student and the experimenter, as well as the design professional. Simplified Design of Switching Power Supplies concentrates on the use of IC regulators. All popular forms of swit

Latitudinally propagating on-off switching aurorae and associated geomagnetic pulsations

International Nuclear Information System (INIS)

Oguti, T.; Kokubun, S.; Hayashi, K.; Tsuruda, K.; Machida, S.; Kitamura, T.; Saka, O.; Watanabe, T.

1981-01-01

Poleward propagating on-off switching aurorae and equatorward propagating aurorae, otherwise similar, were observed simultaneously at Rabbit Lake and La Ronge, respectively, for about 40 min before dawn of Feb 20, 1980. Rabbit Lake is a high auroral latitude site at the northern end of the Saskatchewan chain of stations for the Pulsating Aurora Campaign, whereas La Ronge, due south of Rabbit, is almost at the southern edge of the auroral zone. The repetition periods of the on-off switching aurorae are about 6 to 13 s. The poleward propagating aurorae had well defined fronts of light which extended a few hundred kilometres or more in the east-west direction. The light fronts of the equatorward propagating aurorae, though comparable in extent, were less well defined: they were thicker and fuzzier. The poleward propagating aurorae moved with a speed of approximately 10 km/s whereas the equatorward ones did so with a slightly greater velocity. Geomagnetic field fluctuations were concurrent with the aurorae at both sites. At Rabbit Lake, northward (southward) field changes were associated with upward (downward) changes, whereas the trend is reversed at La Ronge, viz., northward (southward) changes with downward (upward) changes. These trends are consistent with a model of a periodic occurrence of two line currents, westward and eastward, the former moving poleward north of Rabbit Lake and the latter approaching La Ronge from the north

Reverse Logistics

OpenAIRE

Kulikova, Olga

2016-01-01

This thesis was focused on the analysis of the concept of reverse logistics and actual reverse processes which are implemented in mining industry and finding solutions for the optimization of reverse logistics in this sphere. The objective of this paper was the assessment of the development of reverse logistics in mining industry on the example of potash production. The theoretical part was based on reverse logistics and mining waste related literature and provided foundations for further...

Sensitivity and specificity of a real-time reverse transcriptase polymerase chain reaction detecting feline coronavirus mutations in effusion and serum/plasma of cats to diagnose feline infectious peritonitis

NARCIS (Netherlands)

Felten, Sandra; Leutenegger, Christian M.; Balzer, Hans Joerg; Pantchev, Nikola; Matiasek, Kaspar; Wess, Gerhard; Egberink, Herman|info:eu-repo/dai/nl/089740890; Hartmann, Katrin

2017-01-01

Background: Feline coronavirus (FCoV) exists as two pathotypes, and FCoV spike gene mutations are considered responsible for the pathotypic switch in feline infectious peritonitis (FIP) pathogenesis. The aim of this study was to evaluate sensitivity and specificity of a real-time reverse

Switched reluctance motor drives

Indian Academy of Sciences (India)

Davis RM, Ray WF, Blake RJ 1981 Inverter drive for switched reluctance: circuits and component ratings. Inst. Elec. Eng. Proc. B128: 126-136. Ehsani M. 1991 Position Sensor elimination technique for the switched reluctance motor drive. US Patent No. 5,072,166. Ehsani M, Ramani K R 1993 Direct control strategies based ...

Seismic switch for strong motion measurement

Science.gov (United States)

Harben, P.E.; Rodgers, P.W.; Ewert, D.W.

1995-05-30

A seismic switching device is described that has an input signal from an existing microseismic station seismometer and a signal from a strong motion measuring instrument. The seismic switch monitors the signal level of the strong motion instrument and passes the seismometer signal to the station data telemetry and recording systems. When the strong motion instrument signal level exceeds a user set threshold level, the seismometer signal is switched out and the strong motion signal is passed to the telemetry system. The amount of time the strong motion signal is passed before switching back to the seismometer signal is user controlled between 1 and 15 seconds. If the threshold level is exceeded during a switch time period, the length of time is extended from that instant by one user set time period. 11 figs.

Extensively Reversible Thermal Transformations of a Bistable, Fluorescence-Switchable Molecular Solid: Entry into Functional Molecular Phase-Change Materials.

Science.gov (United States)

Srujana, P; Radhakrishnan, T P

2015-06-15

Functional phase-change materials (PCMs) are conspicuously absent among molecular materials in which the various attributes of inorganic solids have been realized. While organic PCMs are primarily limited to thermal storage systems, the amorphous-crystalline transformation of materials like Ge-Sb-Te find use in advanced applications such as information storage. Reversible amorphous-crystalline transformations in molecular solids require a subtle balance between robust supramolecular assembly and flexible structural elements. We report novel diaminodicyanoquinodimethanes that achieve this transformation by interlinked helical assemblies coupled with conformationally flexible alkoxyalkyl chains. They exhibit highly reversible thermal transformations between bistable (crystalline/amorphous) forms, along with a prominent switching of the fluorescence emission energy and intensity. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in ``avalanche`` mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into ``avalanche`` mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1990-01-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential of GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into an avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large are (1 sq cm) and small area (<1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs., 11 figs.

Subnanosecond photoconductive switching in GaAs

Science.gov (United States)

Druce, R. L.; Pocha, M. D.; Griffin, K. L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in 'avalanche' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into 'avalanche' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (less than 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300-1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on, and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation.

Optical computer switching network

Science.gov (United States)

Clymer, B.; Collins, S. A., Jr.

1985-01-01

The design for an optical switching system for minicomputers that uses an optical spatial light modulator such as a Hughes liquid crystal light valve is presented. The switching system is designed to connect 80 minicomputers coupled to the switching system by optical fibers. The system has two major parts: the connection system that connects the data lines by which the computers communicate via a two-dimensional optical matrix array and the control system that controls which computers are connected. The basic system, the matrix-based connecting system, and some of the optical components to be used are described. Finally, the details of the control system are given and illustrated with a discussion of timing.

Microwave pulse generation by photoconductive switching

Energy Technology Data Exchange (ETDEWEB)

Pocha, M.D.; Druce, R.L.

1989-03-14

Laser activated photoconductive semiconductor switching shows significant potential for application in high power microwave generation. Primary advantages of this concept are: small size, light weight, ruggedness, precise timing and phasing by optical control, and the potential for high peak power in short pulses. Several concepts have been suggested for microwave generation using this technology. They generally fall into two categories (1) the frozen wave generator or (2) tuned cavity modulation, both of which require only fast closing switches. We have been exploring a third possibility requiring fast closing and opening switches, that is the direct modulation of the switch at microwave frequencies. Switches have been fabricated at LLNL using neutron irradiated Gallium Arsenide which exhibit response times as short as 50 ps at low voltages. We are in the process of performing high voltage tests. So far, we have been able to generate 2.4 kV pulses with approximately 340 ps response time (FWHM) using approximately a 200..mu..J optical pulse. Experiments are continuing to increase the voltage and improve the switching efficiency. 3 refs., 6 figs.

Microwave pulse generation by photoconductive switching

Science.gov (United States)

Pocha, M. D.; Druce, R. L.

1989-03-01

Laser activated photoconductive semiconductor switching shows significant potential for application in high power microwave generation. Primary advantages of this concept are: small size, light weight, ruggedness, precise timing and phasing by optical control, and the potential for high peak power in short pulses. Several concepts have been suggested for microwave generation using this technology. They generally fall into two categories: (1) the frozen wave generator, or (2) tuned cavity modulation, both of which require only fast closing switches. We have been exploring a third possibility requiring fast closing and opening switches, that is the direct modulation of the switch at microwave frequencies. Switches have been fabricated at LLNL using neutron irradiated Gallium Arsenide which exhibit response times as short as 50 ps at low voltages. We are in the process of performing high voltage tests. So far, we have been able to generate 2.4 kV pulses with approximately 340 ps response time (FWHM) using approximately a 200 microJ optical pulse. Experiments are continuing to increase the voltage and improve the switching efficiency.

Mating-type switching by chromosomal inversion in methylotrophic yeasts suggests an origin for the three-locus Saccharomyces cerevisiae system.

Science.gov (United States)

Hanson, Sara J; Byrne, Kevin P; Wolfe, Kenneth H

2014-11-11

Saccharomyces cerevisiae has a complex system for switching the mating type of haploid cells, requiring the genome to have three mating-type (MAT)-like loci and a mechanism for silencing two of them. How this system originated is unknown, because the three-locus system is present throughout the family Saccharomycetaceae, whereas species in the sister Candida clade have only one locus and do not switch. Here we show that yeasts in a third clade, the methylotrophs, have a simpler two-locus switching system based on reversible inversion of a section of chromosome with MATa genes at one end and MATalpha genes at the other end. In Hansenula polymorpha the 19-kb invertible region lies beside a centromere so that, depending on the orientation, either MATa or MATalpha is silenced by centromeric chromatin. In Pichia pastoris, the orientation of a 138-kb invertible region puts either MATa or MATalpha beside a telomere and represses transcription of MATa2 or MATalpha2. Both species are homothallic, and inversion of their MAT regions can be induced by crossing two strains of the same mating type. The three-locus system of S. cerevisiae, which uses a nonconservative mechanism to replace DNA at MAT, likely evolved from a conservative two-locus system that swapped genes between expression and nonexpression sites by inversion. The increasing complexity of the switching apparatus, with three loci, donor bias, and cell lineage tracking, can be explained by continuous selection to increase sporulation ability in young colonies. Our results provide an evolutionary context for the diversity of switching and silencing mechanisms.

Analysis on the Motivations of Code–Switching%Analysis on the Motivations of Code– Switching

Institute of Scientific and Technical Information of China (English)

孔祥曼

2015-01-01

Code-switching is a common phenomenon in language contact. It reflects the speaker's psychological state and his attitude towards a certain language or a language variety. This paper briefly analyzes the social and psychological motivations of the speakers when they use code-switching.

Bias-induced conformational switching of supramolecular networks of trimesic acid at the solid-liquid interface

Science.gov (United States)

Ubink, J.; Enache, M.; Stöhr, M.

2018-05-01

Using the tip of a scanning tunneling microscope, an electric field-induced reversible phase transition between two planar porous structures ("chickenwire" and "flower") of trimesic acid was accomplished at the nonanoic acid/highly oriented pyrolytic graphite interface. The chickenwire structure was exclusively observed for negative sample bias, while for positive sample bias only the more densely packed flower structure was found. We suggest that the slightly negatively charged carboxyl groups of the trimesic acid molecule are the determining factor for this observation: their adsorption behavior varies with the sample bias and is thus responsible for the switching behavior.

High-speed 2 × 2 silicon-based electro-optic switch with nanosecond switch time

International Nuclear Information System (INIS)

Xue-Jun, Xu; Shao-Wu, Chen; Hai-Hua, Xu; Yang, Sun; Yu-De, Yu; Jin-Zhong, Yu; Qi-Ming, Wang

2009-01-01

A 2 × 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach–Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1 mm in length and cross-section of 400 nm×340 nm. The measurement results show that the switch has a V π L π figure of merit of 0.145 V·cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and −28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated

Improved switch-resistor packaging

Science.gov (United States)

Redmerski, R. E.

1980-01-01

Packaging approach makes resistors more accessible and easily identified with specific switches. Failures are repaired more quickly because of improved accessibility. Typical board includes one resistor that acts as circuit breaker, and others are positioned so that their values can be easily measured when switch is operated. Approach saves weight by using less wire and saves valuable panel space.

IL-4 Receptor Alpha Signaling through Macrophages Differentially Regulates Liver Fibrosis Progression and Reversal

Directory of Open Access Journals (Sweden)

Shih-Yen Weng

2018-03-01

Full Text Available Chronic hepatitis leads to liver fibrosis and cirrhosis. Cirrhosis is a major cause of worldwide morbidity and mortality. Macrophages play a key role in fibrosis progression and reversal. However, the signals that determine fibrogenic vs fibrolytic macrophage function remain ill defined. We studied the role of interleukin-4 receptor α (IL-4Rα, a potential central switch of macrophage polarization, in liver fibrosis progression and reversal. We demonstrate that inflammatory monocyte infiltration and liver fibrogenesis were suppressed in general IL-4Rα−/− as well as in macrophage-specific IL-4Rα−/− (IL-4RαΔLysM mice. However, with deletion of IL-4RαΔLysM spontaneous fibrosis reversal was retarded. Results were replicated by pharmacological intervention using IL-4Rα-specific antisense oligonucleotides. Retarded resolution was linked to the loss of M2-type resident macrophages, which secreted MMP-12 through IL-4 and IL-13-mediated phospho-STAT6 activation. We conclude that IL-4Rα signaling regulates macrophage functional polarization in a context-dependent manner. Pharmacological targeting of macrophage polarization therefore requires disease stage-specific treatment strategies. Research in Context: Alternative (M2-type macrophage activation through IL-4Rα promotes liver inflammation and fibrosis progression but speeds up fibrosis reversal. This demonstrates context dependent, opposing roles of M2-type macrophages. During reversal IL-4Rα induces fibrolytic MMPs, especially MMP-12, through STAT6. Liver-specific antisense oligonucleotides efficiently block IL-4Rα expression and attenuate fibrosis progression. Keywords: Fibrosis, IL-4 receptor alpha, Liver, Macrophage, MMP12, Progression, Reversal

A gain-coefficient switched Alexandrite laser

International Nuclear Information System (INIS)

Lee, Chris J; Van der Slot, Peter J M; Boller, Klaus-J

2013-01-01

We report on a gain-coefficient switched Alexandrite laser. An electro-optic modulator is used to switch between high and low gain states by making use of the polarization dependent gain of Alexandrite. In gain-coefficient switched mode, the laser produces 85 ns pulses with a pulse energy of 240 mJ at a repetition rate of 5 Hz.

Electrically switched ion exchange

Energy Technology Data Exchange (ETDEWEB)

Lilga, M.A. [Pacific Northwest National Lab., Richland, WA (United States); Schwartz, D.T.; Genders, D.

1997-10-01

A variety of waste types containing radioactive {sup 137}Cs are found throughout the DOE complex. These waste types include water in reactor cooling basins, radioactive high-level waste (HLW) in underground storage tanks, and groundwater. Safety and regulatory requirements and economics require the removal of radiocesium before these wastes can be permanently disposed of. Electrically Switched Ion Exchange (ESIX) is an approach for radioactive cesium separation that combines IX and electrochemistry to provide a selective, reversible, and economic separation method that also produces little or no secondary waste. In the ESIX process, an electroactive IX film is deposited electrochemically onto a high-surface area electrode, and ion uptake and elution are controlled directly by modulating the potential of the film. For cesium, the electroactive films under investigation are ferrocyanides, which are well known to have high selectivities for cesium in concentrated sodium solutions. When a cathode potential is applied to the film, Fe{sup +3} is reduced to the Fe{sup +2} state, and a cation must be intercalated into the film to maintain charge neutrality (i.e., Cs{sup +} is loaded). Conversely, if an anodic potential is applied, a cation must be released from the film (i.e., Cs{sup +} is unloaded). Therefore, to load the film with cesium, the film is simply reduced; to unload cesium, the film is oxidized.

Color tunable electroluminescence and resistance switching from a ZnO-nanorod–TaO_x–p-GaN heterojunction

International Nuclear Information System (INIS)

Zhao, J L; Teo, K L; Zheng, K; Sun, X W

2016-01-01

Well-aligned ZnO nanorods have been prepared on p-GaN–sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaO_x is employed as the intermediate layer and an n-ZnO–TaO_x–p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaO_x layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction. (paper)

Secure videoconferencing equipment switching system and method

Science.gov (United States)

Hansen, Michael E [Livermore, CA

2009-01-13

A switching system and method are provided to facilitate use of videoconference facilities over a plurality of security levels. The system includes a switch coupled to a plurality of codecs and communication networks. Audio/Visual peripheral components are connected to the switch. The switch couples control and data signals between the Audio/Visual peripheral components and one but nor both of the plurality of codecs. The switch additionally couples communication networks of the appropriate security level to each of the codecs. In this manner, a videoconferencing facility is provided for use on both secure and non-secure networks.

Stochastic multistep polarization switching in ferroelectrics

Science.gov (United States)

Genenko, Y. A.; Khachaturyan, R.; Schultheiß, J.; Ossipov, A.; Daniels, J. E.; Koruza, J.

2018-04-01

Consecutive stochastic 90° polarization switching events, clearly resolved in recent experiments, are described by a nucleation and growth multistep model. It extends the classical Kolmogorov-Avrami-Ishibashi approach and includes possible consecutive 90°- and parallel 180° switching events. The model predicts the results of simultaneous time-resolved macroscopic measurements of polarization and strain, performed on a tetragonal Pb (Zr ,Ti ) O3 ceramic in a wide range of electric fields over a time domain of seven orders of magnitude. It allows the determination of the fractions of individual switching processes, their characteristic switching times, activation fields, and respective Avrami indices.

The increased importance of sector switching

DEFF Research Database (Denmark)

Frederiksen, Anders; Hansen, Jesper Rosenberg

2017-01-01

Sector switching is an important phenomenon that casts light on public–private differences. Yet our knowledge about its prevalence and trends is limited. We study sector switching using unique Danish register-based employer–employee data covering more than 25 years. We find that sector switching...... constitutes 18.5% of all job-to-job mobility, and the trend is increasing both from public to private and from private to public. Sector switching is also generally increasing for middle managers, but for administrative professionals only the flows from private to public increase and for top managers only...... the flows from public to private increase....

Magnetization Reversal through Soliton in a Site-Dependent Weak Ferromagnet

International Nuclear Information System (INIS)

Kavitha, L.; Sathishkumar, P.; Saravanan, M.; Gopi, D.

2010-06-01

Switching the magnetization of a magnetic bit through flipping of soliton offers the possibility of developing a new innovative approach for data storage technologies. The spin dynamics of a site-dependent ferromagnet with antisymmetric Dzyaloshinskii-Moriya interaction is governed by a generalized inhomogeneous higher order nonlinear Schroedinger equation. We demonstrate the magnetization reversal through flipping of soliton in the ferromagnetic medium by solving the two coupled evolution equations for the velocity and amplitude of the soliton using the fourth order Runge-Kutta method numerically. We propose a new approach to induce the flipping behaviour of soliton in the presence of inhomogeneity by tuning the parameter associated with Dzyaloshinskii-Moriya interaction which causes the soliton to move with constant velocity and amplitude along the spin lattice. (author)

Multi-jump magnetic switching in ion-beam sputtered amorphous Co20Fe60B20 thin films

International Nuclear Information System (INIS)

Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

2013-01-01

Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co 20 Fe 60 B 20 (5–75 nm) thin films grown on Si/amorphous SiO 2 are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices

Memory resistive switching in CeO{sub 2}-based film microstructures patterned by a focused ion beam

Energy Technology Data Exchange (ETDEWEB)

Velichko, A. [Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Boriskov, P., E-mail: boriskov@psu.karelia.ru [Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Savenko, A. [Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Grishin, A.; Khartsev, S.; Yar, M. Ahmed; Muhammed, M. [Royal Institute of Technology, SE-164 40 Stockholm, Kista (Sweden)

2014-04-01

Heteroepitaxial CeO{sub 2} (80 nm)/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (500 nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO{sub 2} microjunctions patterned by a focused ion beam on a La{sub 0.5}Sr{sub 0.5}CoO{sub 3} film exhibit reproducible reversible switching between a high resistance state (OFF) with insulating properties and a semiconducting or metallic low resistance state (ON) with resistance ratios up to 10{sup 4}. The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown. - Highlights: • Ag/CeO{sub 2}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} microstructures were patterned by a focused ion beam. • Reproducible memory resistive switching was discovered in Ag/CeO{sub 2} microjunctions. • Micro-scaling affects electrical characteristics of Ag/CeO{sub 2} microjunctions. • A mechanism of a self-healing breakdown was discovered.

Spatial midsession reversal learning in rats: Effects of egocentric Cue use and memory.

Science.gov (United States)

Rayburn-Reeves, Rebecca M; Moore, Mary K; Smith, Thea E; Crafton, Daniel A; Marden, Kelly L

2018-07-01

The midsession reversal task has been used to investigate behavioral flexibility and cue use in non-human animals, with results indicating differences in the degree of control by environmental cues across species. For example, time-based control has been found in rats only when tested in a T-maze apparatus and under specific conditions in which position and orientation (i.e., egocentric) cues during the intertrial interval could not be used to aid performance. Other research in an operant setting has shown that rats often produce minimal errors around the reversal location, demonstrating response patterns similar to patterns exhibited by humans and primates in this task. The current study aimed to reduce, but not eliminate, the ability for rats to utilize egocentric cues by placing the response levers on the opposite wall of the chamber in relation to the pellet dispenser. Results showed that rats made minimal errors prior to the reversal, suggesting time-based cues were not controlling responses, and that they switched to the second correct stimulus within a few trials after the reversal event. Video recordings also revealed highly structured patterns of behavior by the majority of rats, which often differed depending on which response was reinforced. We interpret these findings as evidence that rats are adept at utilizing their own egocentric cues and that these cues, along with memory for the recent response-reinforcement contingencies, aid in maximizing reinforcement over the session. Copyright © 2018 Elsevier B.V. All rights reserved.

DETERMINANT OF DOWNWARD AUDITOR SWITCHING

Directory of Open Access Journals (Sweden)

Totok Budisantoso

2017-12-01

Full Text Available Abstract: Determinant of Downward Auditor Switching. This study examines the factors that influence downward auditor switching in five ASEAN countries. Fixed effect logistic regression was used as analytical method. This study found that opinion shopping occurred in ASEAN, especially in distress companies. Companies with complex businesses will retain the Big Four auditors to reduce complexity and audit costs. Audit and public committees serve as guardians of auditor quality. On the other hand, shareholders failed to maintain audit quality. It indicates that there is entrenchment effect in auditor switching.

A Novel Silicon-based Wideband RF Nano Switch Matrix Cell and the Fabrication of RF Nano Switch Structures

Directory of Open Access Journals (Sweden)

Yi Xiu YANG

2011-12-01

Full Text Available This paper presents the concept of RF nano switch matrix cell and the fabrication of RF nano switch. The nano switch matrix cell can be implemented into complex switch matrix for signal routing. RF nano switch is the decision unit for the matrix cell; in this research, it is fabricated on a tri-layer high-resistivity-silicon substrate using surface micromachining approach. Electron beam lithography is introduced to define the pattern and IC compatible deposition process is used to construct the metal layers. Silicon-based nano switch fabricated by IC compatible process can lead to a high potential of system integration to perform a cost effective system-on-a-chip solution. In this paper, simulation results of the designed matrix cell are presented; followed by the details of the nano structure fabrication and fabrication challenges optimizations; finally, measurements of the fabricated nano structure along with analytical discussions are also discussed.

Gas adsorption/absorption heat switch, phase 1

Science.gov (United States)

Chan, C. K.

1987-01-01

The service life and/or reliability of far-infrared sensors on surveillance satellites is presently limited by the cryocooler. The life and/or reliability, however, can be extended by using redundant cryocoolers. To reduce parasitic heat leak, each stage of the inactive redundant cryocooler must be thermally isolated from the optical system, while each stage of the active cryocooler must be thermally connected to the system. The thermal break or the thermal contact can be controlled by heat switches. Among different physical mechanisms for heat switching, mechanically activated heat switches tend to have low reliability and, furthermore, require a large contact force. Magnetoresistive heat switches are, except at very low temperatures, of very low efficiency. Heat switches operated by the heat pipe principle usually require a long response time. A sealed gas gap heat switch operated by an adsorption pump has no mechanical motion and should provide the reliability and long lifetime required in long-term space missions. Another potential application of a heat switch is the thermal isolation of the optical plane during decontamination.

Reluctance motor employing superconducting magnetic flux switches

International Nuclear Information System (INIS)

Spyker, R.L.; Ruckstadter, E.J.

1992-01-01

This paper reports that superconducting flux switches controlling the magnetic flux in the poles of a motor will enable the implementation of a reluctance motor using one central single phase winding. A superconducting flux switch consists of a ring of superconducting material surrounding a ferromagnetic pole of the motor. When in the superconducting state the switch will block all magnetic flux attempting to flow in the ferromagnetic core. When switched to the normal state the superconducting switch will allow the magnetic flux to flow freely in that pole. By using one high turns-count coil as a flux generator, and selectively channeling flux among the various poles using the superconducting flux switch, 3-phase operation can be emulated with a single-hase central AC source. The motor will also operate when the flux generating coil is driven by a DC current, provided the magnetic flux switches see a continuously varying magnetic flux. Rotor rotation provides this varying flux due to the change in stator pole inductance it produces

High voltage disconnect switch position monitoring

Energy Technology Data Exchange (ETDEWEB)

Crampton, S W

1983-08-01

Unreliable position indication on high-voltage (HV) disconnect switches can result in equipment damage worth many times the cost of a disconnect switch. The benefits and limitations of a number of possible methods of reliably monitoring HV disconnect switches are assessed. Several methods of powering active devices at HV are noted. It is concluded that the most reliable way of monitoring switch position at reasonable cost would use a passive hermetically-sealed blade-position sensor located at HV, with a fibre-optic link between HV and ground. Separate sensors would be used for open and closed position indication. For maximum reliability the fibre-optic link would continue into the relay building. A passive magnetically actuated fibre-optic sensor has been built which demonstrates the feasibility of the concept. The sensor monitors blade position relative to the jaws in three dimensions with high resolution. A design for an improved passive magneto-optic sensor has significantly lower optical losses, allowing a single fibre-optic loop and 3 sensors to monitor closure of all phases of a disconnect switch. A similar loop would monitor switch opening. The improved sensor has a solid copper housing to provide greater immunity to fault currents, and to protect it from the environment and from physical damage. Two methods of providing a protected path for fibre-optics passing from HV to ground are proposed, one using a hollow porcelain switch-support insulator and the other using an additional small-diameter polymer insulator with optical fibres imbedded in its fibreglass core. A number of improvements are recommended which can be made to existing switches to increase their reliability. 16 refs., 13 figs., 1 tab.

Pulsed laser triggered high speed microfluidic switch

Science.gov (United States)

Wu, Ting-Hsiang; Gao, Lanyu; Chen, Yue; Wei, Kenneth; Chiou, Pei-Yu

2008-10-01

We report a high-speed microfluidic switch capable of achieving a switching time of 10 μs. The switching mechanism is realized by exciting dynamic vapor bubbles with focused laser pulses in a microfluidic polydimethylsiloxane (PDMS) channel. The bubble expansion deforms the elastic PDMS channel wall and squeezes the adjacent sample channel to control its fluid and particle flows as captured by the time-resolved imaging system. A switching of polystyrene microspheres in a Y-shaped channel has also been demonstrated. This ultrafast laser triggered switching mechanism has the potential to advance the sorting speed of state-of-the-art microscale fluorescence activated cell sorting devices.

Study of the Switching Errors in an RSFQ Switch by Using a Computerized Test Setup

International Nuclear Information System (INIS)

Kim, Se Hoon; Baek, Seung Hun; Yang, Jung Kuk; Kim, Jun Ho; Kang, Joon Hee

2005-01-01

The problem of fluctuation-induced digital errors in a rapid single flux quantum (RSFQ) circuit has been a very important issue. In this work, we calculated the bit error rate of an RSFQ switch used in superconductive arithmetic logic unit (ALU). RSFQ switch should have a very low error rate in the optimal bias. Theoretical estimates of the RSFQ error rate are on the order of 10 -50 per bit operation. In this experiment, we prepared two identical circuits placed in parallel. Each circuit was composed of 10 Josephson transmission lines (JTLs) connected in series with an RSFQ switch placed in the middle of the 10 JTLs. We used a splitter to feed the same input signal to both circuits. The outputs of the two circuits were compared with an RSFQ exclusive OR (XOR) to measure the bit error rate of the RSFQ switch. By using a computerized bit-error-rate test setup, we measured the bit error rate of 2.18 x 10 -12 when the bias to the RSFQ switch was 0.398 mA that was quite off from the optimum bias of 0.6 mA.

Operation of a semiconductor opening switch at ultrahigh current densities

International Nuclear Information System (INIS)

Lyubutin, S. K.; Rukin, S. N.; Slovikovsky, B. G.; Tsyranov, S. N.

2012-01-01

The operation of a semiconductor opening switch (SOS diode) at cutoff current densities of tens of kA/cm 2 is studied. In experiments, the maximum reverse current density reached 43 kA/cm 2 for ∼40 ns. Experimental data on SOS diodes with a p + -p-n-n + structure and a p-n junction depth from 145 to 180 μm are presented. The dynamics of electron-hole plasma in the diode at pumping and current cutoff stages is studied by numerical simulation methods. It is shown that current cutoff is associated with the formation of an electric field region in a thin (∼45 μm) layer of the structure’s heavily doped p-region, in which the acceptor concentration exceeds 10 16 cm −3 , and the current cutoff process depends weakly on the p-n junction depth.

Stochastic Switching Dynamics

DEFF Research Database (Denmark)

Simonsen, Maria

This thesis treats stochastic systems with switching dynamics. Models with these characteristics are studied from several perspectives. Initially in a simple framework given in the form of stochastic differential equations and, later, in an extended form which fits into the framework of sliding...... mode control. It is investigated how to understand and interpret solutions to models of switched systems, which are exposed to discontinuous dynamics and uncertainties (primarily) in the form of white noise. The goal is to gain knowledge about the performance of the system by interpreting the solution...

Monitoring Mellanox Infiniband SX6036 switches

CERN Document Server

Agapiou, Marinos

2017-01-01

The SX6036 switches addressed by my project, are part of a fully non-blocking fat-tree cluster consisting of 72 servers and 6 Mellanox SX6036 Infiniband switches. My project is about retrieving the appropriate metrics from the Infiniband switch cluster, ingesting the data to Collectd and after my data are being transfered to CERN Database, they are being visualized via Grafana Dashboards.

Optical switches based on surface plasmons

International Nuclear Information System (INIS)

Chen Cong; Wang Pei; Yuan Guanghui; Wang Xiaolei; Min Changjun; Deng Yan; Lu Yonghua; Ming Hai

2008-01-01

Great attention is being paid to surface plasmons (SPs) because of their potential applications in sensors, data storage and bio-photonics. Recently, more and more optical switches based on surface plasmon effects have been demonstrated either by simulation or experimentally. This article describes the principles, advantages and disadvantages of various types of optical switches based on SPs, in particular the all-optical switches. (authors)

A new switched power linac structure

International Nuclear Information System (INIS)

Villa, F.

1989-03-01

A new pulse power structure has been described that utilizes an easily accessible rectilinear switch. The new structure is more ''forgiving'' (as far as risetime is concerned) than the radial line transformer, and contains fewer switching structures/unit length. The combination of the new structure with the switch proposed seems to offer interesting possibilities for a future linear collider. 13 refs., 6 figs., 2 tabs

Net metering study of switching effects on electromechanical meters[Report prepared for the Measurement Canada Electricity Net Metering Project

Energy Technology Data Exchange (ETDEWEB)

Van Overberghe, L. [Measurement Canada, London, ON (Canada)

2006-03-03

The feasibility of introducing net metering in the electricity sector was evaluated with particular reference to a project administered by Measurement Canada and Electro-Federation Canada (MicroPower Connect) in collaboration with Natural Resources Canada. The objective of the Measurement Canada Electricity Net Metering Project is to identify and eliminate the barriers introduced by the Electricity and Gas Inspection Act regarding the introduction of net metering. The purpose was to design a device that would allow rotation reversal in a residential electromechanical single phase meter. The device should approximate any fluctuations found in a typical net metering system. A series of tests were conducted to understand the influences, on errors, of forward-to-reverse and reverse-to-forward transitions, specifically to find evidence of error migration and mechanical stress. The project was designed to find and measure the effects of forward reverse switching on an electromechanical meter resulting from a change in energy flow. Twenty metres were calibrated in the forward direction in series from light load to high load. Power factor was not adjustable. Test points were then applied in both the forward and reverse directions. The exercise yielded individual errors which were aggregated to show average found errors after 3,000 transitions. Small shifts in errors were apparent and there was no evidence to support a disk flutter theory. refs., tabs., figs.

Photo-stimulated resistive switching of ZnO nanorods

International Nuclear Information System (INIS)

Park, Jinjoo; Lee, Seunghyup; Yong, Kijung

2012-01-01

Resistive switching memory devices are promising candidates for emerging memory technologies because they yield outstanding device performance. Storage mechanisms for achieving high-density memory applications have been developed; however, so far many of them exhibit typical resistive switching behavior from the limited controlling conditions. In this study, we introduce photons as an unconventional stimulus for activating resistive switching behaviors. First, we compare the resistive switching behavior in light and dark conditions to describe how resistive switching memories can benefit from photons. Second, we drive the switching of resistance not by the electrical stimulus but only by the modulation of photon. ZnO nanorods were employed as a model system to demonstrate photo-stimulated resistive switching in high-surface-area nanomaterials, in which photo-driven surface states strongly affect their photoconductivity and resistance states. (paper)

The Transistor as Low Level Switch

Energy Technology Data Exchange (ETDEWEB)

Lyden, Anders

1963-10-15

The common collector transistor switch has in the on state with open emitter a certain offset voltage U{sub EK} {approx_equal} -kT/qB{sub N}. This expression is derived in a new, more physical way. It is further shown at which emitter current the current amplification factor B{sub N} should be measured to get a correct value for the above expression. The collector current I at zero collector voltage I{sub K} = I{sub 0}(exp(qU{sub E}/kT) - 1) extremely well. Substitution of I{sub EBO} and I{sub KBO} by I{sub 0} in Eber's and Moll's relations consequently improves these equations and the characteristics of the transistor switch can be better determined. At switching on and off transients appear across the switch. The influence of the 'spike' at switching off can be described by an current I{sub SPIKE} which is easy to calculate. I{sub SPIKE} is approximately dependent only on the base - emitter depletion layer capacitance and the chopper frequency f{sub 0}. Some compensated switches have lower drift than the drift in U{sub EK}. They may, for example, have a temperature drift < 0.2 {mu}V/deg C and a long time drift < 2 {mu}V/week. Some compensated switches also have I{sub SPIKE} < 10{sup -12} f{sub 0}A. The static offset current in the off state can easily be made < 10{sup -12} A.

Proton-Controlled Organic Microlaser Switch.

Science.gov (United States)

Gao, Zhenhua; Zhang, Wei; Yan, Yongli; Yi, Jun; Dong, Haiyun; Wang, Kang; Yao, Jiannian; Zhao, Yong Sheng

2018-05-25

Microscale laser switches have been playing irreplaceable roles in the development of photonic devices with high integration levels. However, it remains a challenge to switch the lasing wavelengths across a wide range due to relatively fixed energy bands in traditional semiconductors. Here, we report a strategy to switch the lasing wavelengths among multiple states based on a proton-controlled intramolecular charge-transfer (ICT) process in organic dye-doped flexible microsphere resonant cavities. The protonic acids can effectively bind onto the ICT molecules, which thus enhance the ICT strength of the dyes and lead to a red-shifted gain behavior. On this basis, the gain region was effectively modulated by using acids with different proton-donating ability, and as a result, laser switching among multiple wavelengths was achieved. The results will provide guidance for the rational design of miniaturized lasers with performances based on the characteristic of organic optoelectronic materials.

Multi-planed unified switching topologies

Science.gov (United States)

Chen, Dong; Heidelberger, Philip; Sugawara, Yutaka

2017-07-04

An apparatus and method for extending the scalability and improving the partitionability of networks that contain all-to-all links for transporting packet traffic from a source endpoint to a destination endpoint with low per-endpoint (per-server) cost and a small number of hops. An all-to-all wiring in the baseline topology is decomposed into smaller all-to-all components in which each smaller all-to-all connection is replaced with star topology by using global switches. Stacking multiple copies of the star topology baseline network creates a multi-planed switching topology for transporting packet traffic. Point-to-point unified stacking method using global switch wiring methods connects multiple planes of a baseline topology by using the global switches to create a large network size with a low number of hops, i.e., low network latency. Grouped unified stacking method increases the scalability (network size) of a stacked topology.

Low prepulse, high power density water dielectric switching

International Nuclear Information System (INIS)

Johnson, D.L.; VanDevender, J.P.; Martin, T.H.

1979-01-01

Prepulse voltage suppression has proven difficult in high power, high voltage accelerators employing self-breakdown water dielectric switches. A novel and cost effective water switch has been developed at Sandia Laboratories which reduces prepulse voltage by reducing the capacity across the switch. This prepulse suppression switch causes energy formerly stored in the switch capacity and dissipated in the arc to be useful output energy. The switching technique also allows the pulse forming lines to be stacked in parallel and electrically isolated from the load after the line has been discharged. The switch consists of a ground plane, with several holes, inserted between the switch electrodes. The output line switch electrodes extend through the holes and face electrodes on the pulse forming line (PFL). The capacity between the PFL and the output transmission line is reduced by about 80%. The gap spacing between the output line electrode and the hole in the ground plane is adjusted so that breakdown occurs after the main pulse and provides a crow bar between the load and the source. Performance data from the Proto II, Mite and Ripple test facilities are presented

Enhanced capacity and stability for the separation of cesium in electrically switched ion exchange

International Nuclear Information System (INIS)

Tawfic, A.F.; Dickson, S.E.; Kim, Y.; Mekky, W.