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Sample records for resistance switching characteristics

  1. Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

    Directory of Open Access Journals (Sweden)

    Shuhan Jing

    2015-04-01

    Full Text Available The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

  2. Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

    International Nuclear Information System (INIS)

    Kim, Myung Ju; Jeon, Dong Su; Park, Ju Hyun; Kim, Tae Geun

    2015-01-01

    This paper reports the bipolar resistive switching characteristics of TaN x -based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from −0.82 V to −0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10 5  s) and pulse-switching endurance (>10 6 cycles) properties. These results indicate that TaN x -based ReRAM devices have a potential for future nonvolatile memory devices

  3. Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

    Science.gov (United States)

    Kim, Tae-Hyeon; Kim, Sungjun; Kim, Hyungjin; Kim, Min-Hwi; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook

    2018-02-01

    In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.

  4. The Resistive Switching Characteristics in ZrO2 and Its Filamentary Conduction Behavior

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    Chun-Hung Lai

    2016-07-01

    Full Text Available This study investigated the conduction properties of sputtered ZrO2 exhibiting reversible and stable resistance change. Similar current distributions in on/off conduction and set/reset switching were observed in top electrodes with a diameter of 150, 250, and 350 µm. The size independence of current magnitude implied the presence of an uneven filamentary path over the electrode area. Increased current compliance was imposed on the turn-on process, and the observed increase in on-state current and turn-off threshold was attributed to incremental filament diameter. Variations in current conduction and resistance switching were analyzed by monitoring sweeping bias limits in both positive and negative polarities. These experimental observations were interpreted based on the aspect ratio of channels comprising conductive and oxidized filament portions, thereby elucidating the characteristics of filamentary resistive switching.

  5. Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics.

    Science.gov (United States)

    Han, Su-Ting; Hu, Liang; Wang, Xiandi; Zhou, Ye; Zeng, Yu-Jia; Ruan, Shuangchen; Pan, Caofeng; Peng, Zhengchun

    2017-08-01

    Solution-processed black phosphorus quantum-dot-based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry.

  6. Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

    Science.gov (United States)

    Zhang, Jiahua; Chen, Da; Huang, Shihua

    2017-12-01

    The influence of oxygen doping on resistive-switching characteristics of Ag/a-Si/p+-c-Si device was investigated. By oxygen doping in the growth process of amorphous silicon, the device resistive-switching performances, such as the ON/OFF resistance ratios, yield and stability were improved, which may be ascribed to the significant reduction of defect density because of oxygen incorporation. The device I–V characteristics are strongly dependent on the oxygen doping concentration. As the oxygen doping concentration increases, the Si-rich device gradually transforms to an oxygen-rich device, and the device yield, switching characteristics, and stability may be improved for silver/oxygen-doped a-Si/p+-c-Si device. Finally, the device resistive-switching mechanism was analyzed. Project supported by the Zhejiang Provincial Natural Science Foundation of China (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  7. Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer

    International Nuclear Information System (INIS)

    Li Yingtao; Long Shibing; Lv Hangbing; Liu Qi; Wang Yan; Zhang Sen; Lian Wentai; Wang Ming; Zhang Kangwei; Xie Hongwei; Liu Ming; Liu Su

    2011-01-01

    The stabilization of the resistive switching characteristics is important to resistive random access memory (RRAM) device development. In this paper, an alternative approach for improving resistive switching characteristics in ZrO 2 -based resistive memory devices has been investigated. Compared with the Cu/ZrO 2 /Pt structure device, by embedding a thin TiO x layer between the ZrO 2 and the Cu top electrode, the Cu/TiO x -ZrO 2 /Pt structure device exhibits much better resistive switching characteristics. The improvement of the resistive switching characteristics in the Cu/TiO x -ZrO 2 /Pt structure device might be attributed to the modulation of the barrier height at the electrode/oxide interfaces.

  8. Resistive switching characteristics of interfacial phase-change memory at elevated temperature

    Science.gov (United States)

    Mitrofanov, Kirill V.; Saito, Yuta; Miyata, Noriyuki; Fons, Paul; Kolobov, Alexander V.; Tominaga, Junji

    2018-04-01

    Interfacial phase-change memory (iPCM) devices were fabricated using W and TiN for the bottom and top contacts, respectively, and the effect of operation temperature on the resistive switching was examined over the range between room temperature and 200 °C. It was found that the high-resistance (RESET) state in an iPCM device drops sharply at around 150 °C to a low-resistance (SET) state, which differs by ˜400 Ω from the SET state obtained by electric-field-induced switching. The iPCM device SET state resistance recovered during the cooling process and remained at nearly the same value for the RESET state. These resistance characteristics greatly differ from those of the conventional Ge-Sb-Te (GST) alloy phase-change memory device, underscoring the fundamentally different switching nature of iPCM devices. From the thermal stability measurements of iPCM devices, their optimal temperature operation was concluded to be less than 100 °C.

  9. Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x

    Science.gov (United States)

    Kim, Sungjun; Chang, Yao-Feng; Kim, Min-Hwi; Park, Byung-Gook

    2017-07-01

    This letter studies the effect of the negative-set on the resistive switching performances of CMOS-compatible Ni/SiNx/p++-Si resistive memory devices by simply tuning x. A Ni/SiN1.07/p++-Si device showed lower power switching (20 μW) and better endurance cycles (103) compared to a Ni/SiN0.82/p++-Si device because of the improved negative set behavior and initially lower set and reset currents. In addition, we achieved fast switching speed for set (200 ns) and reset (100 ns) processes in the Ni/SiN1.07/p++-Si device. For the Ni/SiN1.07/p++-Si device, fine adjustment of resistance values is attainable by varying the pulse amplitude and width due to the gradual reset switching characteristics. The barrier-height-dependent conduction model is proposed to explain the change in the current level with the x value.

  10. Resistive switching characteristics of solution-processed organic-inorganic blended films for flexible memory applications

    Science.gov (United States)

    Baek, Il-Jin; Cho, Won-Ju

    2018-02-01

    We developed a hybrid organic-inorganic resistive random access memory (ReRAM) device that uses a solution-process to overcome the disadvantages of organic and inorganic materials for flexible memory applications. The drawbacks of organic and inorganic materials are a poor electrical characteristics and a lack of flexibility, respectively. We fabricated a hybrid organic-inorganic switching layer of ReRAM by blending HfOx or AlOx solution with PMMA solution and investigated the resistive switching behaviour in Ti/PMMA/Pt, Ti/PMMA-HfOx/Pt and Ti/PMMA-AlOx/Pt structures. It is found that PMMA-HfOx or PMMA-AlOx hybrid switching layer has a larger memory window, more stable durability and retention characteristics, and a better set/reset voltage distribution than PMMA layer. Further, it is confirmed that the flexibility of the PMMA-HfOx and PMMA-AlOx blended films was almost similar to that of the organic PMMA film. Thus, the solution-processed organic-inorganic blended films are considered a promising material for a non-volatile memory device on a flexible or wearable electronic system.

  11. Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

    International Nuclear Information System (INIS)

    Hang-Bing, Lv; Peng, Zhou; Xiu-Feng, Fu; Ming, Yin; Ya-Li, Song; Li, Tang; Ting-Ao, Tang; Yin-Yin, Lin

    2008-01-01

    Resistive switching characteristics of Cu x O films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current–voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating

  12. Effects of electrode material and configuration on the characteristics of planar resistive switching devices

    KAUST Repository

    Peng, H.Y.

    2013-11-13

    We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories. 2013 Author(s).

  13. Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

    Science.gov (United States)

    Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

    2018-01-01

    We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

  14. Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement

    Directory of Open Access Journals (Sweden)

    Qigang Zhou

    2013-03-01

    Full Text Available The refractory transition metal nitride (TMN film Hafnium nitride (HfNx was successfully prepared on silicon-based substrates as bottom electrodes for resistive random access memory (RRAM cells in Pt (top/metal oxide/ HfNx (bottom sandwich structure. The reproducible resistive switching (RS characteristics of the memory cells were studied systematically for RRAM applications. The advantages of adopting HfNx instead of Pt as bottom electrode material were demonstrated, including the improvement of the low resistive state value, the RS endurance and the uniformity of RS parameters. The composition and chemical bonding states of the prepared HfNx was analyzed by X-ray photoelectron spectroscopy (XPS technique. The nitrogen content in the HfNx and the Gibbs free energy of the corresponding metal oxide formation has great influences on the RS properties. The oxygen reservoir ability and diffusion barrier effect of the HfNx play a key role in the RS performance improvement of the RRAM devices.

  15. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Kyungah; Park, Sangsu; Lee, Kwanghee; Lee, Byounghun; Hwang, Hyunsang [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Insung; Jung, Seungjae; Jo, Minseok; Park, Jubong; Shin, Jungho; Biju, Kuyyadi P; Kong, Jaemin, E-mail: kyseo@gist.ac.kr, E-mail: hwanghs@gist.ac.kr [School of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2011-06-24

    We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.

  16. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure.

    Science.gov (United States)

    Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

    2009-01-14

    The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 microm(2) to 200 x 200 nm(2). From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I(ON)/I(OFF) approximately 10(4)), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10,000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

  17. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

    2009-01-01

    The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 μm 2 to 200 x 200 nm 2 . From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I ON /I OFF ∼10 4 ), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

  18. Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Po-Hsun [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Chang, Kuan-Chang, E-mail: kcchang@pkusz.edu.cn [Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); School of Electronic and Computer Engineering, Peking University, Shenzhen 518055 (China); Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Chih-Cheng; Chen, Wen-Chung; Lin, Jiun-Chiu; Wang, Ming-Hui [Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Zheng, Hao-Xuan; Chen, Min-Chen [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Sze, Simon M. [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, ROC (China)

    2017-08-31

    In this paper, we implement a post-oxidation method to modify surface characteristics of indium tin oxide (ITO) films by using an O{sub 2} inductively coupled plasma (ICP) treatment. Based on field emission-scanning electron microscope (FE-SEM) and atomic force microscope (AFM) analysis, we found that the surface morphologies of the ITO films become slightly flatter after the O{sub 2} plasma treatment. The optical characteristics and X-ray diffraction (XRD) experiments of either pure ITO or O{sub 2} plasma treated ITO films were also verified. Even though the XRD results showed no difference from bulk crystallizations, the oxygen concentrations increased at the film surface after O{sub 2} plasma treatment, according to the XPS inspection results. Moreover, this study investigated the effects of two different plasma treatment times on oxygen concentration in the ITO films. The surface sheet resistance of the plasma treated ITO films became nearly non-conductive when measured with a 4-point probe. Finally, we applied the O{sub 2} plasma treated ITO films as the insulator in resistive random access memory (RRAM) to examine their potential for use in resistive switching storage applications. Stable resistance switching characteristics were obtained by applying the O{sub 2} plasma treatment to the ITO-based RRAM. We also confirmed the relationship between plasma treatment time and RRAM performance. These material analyses and electrical measurements suggest possible advantages in using this plasma treatment technique in device fabrication processes for RRAM applications.

  19. Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

    KAUST Repository

    Wang, Hong

    2015-05-01

    The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials. Resistive switching (RS) devices with configurable functionality based on protein are successfully achieved. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Resistive switching characteristics of solution-processed Al-Zn-Sn-O films annealed by microwave irradiation

    Science.gov (United States)

    Kim, Tae-Wan; Baek, Il-Jin; Cho, Won-Ju

    2018-02-01

    In this study, we employed microwave irradiation (MWI) at low temperature in the fabrication of solution-processed AlZnSnO (AZTO) resistive random access memory (ReRAM) devices with a structure of Ti/AZTO/Pt and compared the memory characteristics with the conventional thermal annealing (CTA) process. Typical bipolar resistance switching (BRS) behavior was observed in AZTO ReRAM devices treated with as-deposited (as-dep), CTA and MWI. In the low resistance state, the Ohmic conduction mechanism describes the dominant conduction of these devices. On the other hand, the trap-controlled space charge limited conduction (SCLC) mechanism predominates in the high resistance state. The AZTO ReRAM devices processed with MWI showed larger memory windows, uniform distribution of resistance state and operating voltage, stable DC durability (>103 cycles) and stable retention characteristics (>104 s). In addition, the AZTO ReRAM devices treated with MWI exhibited multistage storage characteristics by modulating the amplitude of the reset bias, and eight distinct resistance levels were obtained with stable retention capability.

  1. Improvement of multi-level resistive switching characteristics in solution-processed AlO x -based non-volatile resistive memory using microwave irradiation

    Science.gov (United States)

    Kim, Seung-Tae; Cho, Won-Ju

    2018-01-01

    We fabricated a resistive random access memory (ReRAM) device on a Ti/AlO x /Pt structure with solution-processed AlO x switching layer using microwave irradiation (MWI), and demonstrated multi-level cell (MLC) operation. To investigate the effect of MWI power on the MLC characteristics, post-deposition annealing was performed at 600-3000 W after AlO x switching layer deposition, and the MLC operation was compared with as-deposited (as-dep) and conventional thermally annealing (CTA) treated devices. All solution-processed AlO x -based ReRAM devices exhibited bipolar resistive switching (BRS) behavior. We found that these devices have four-resistance states (2 bits) of MLC operation according to the modulation of the high-resistance state (HRSs) through reset voltage control. Particularly, compared to the as-dep and CTA ReRAM devices, the MWI-treated ReRAM devices showed a significant increase in the memory window and stable endurance for multi-level operation. Moreover, as the MWI power increased, excellent MLC characteristics were exhibited because the resistance ratio between each resistance state was increased. In addition, it exhibited reliable retention characteristics without deterioration at 25 °C and 85 °C for 10 000 s. Finally, the relationship between the chemical characteristics of the solution-processed AlO x switching layer and BRS-based multi-level operation according to the annealing method and MWI power was investigated using x-ray photoelectron spectroscopy.

  2. Modulation of resistive switching characteristics for individual BaTiO3 microfiber by surface oxygen vacancies

    Science.gov (United States)

    Miao, Zhilei; Chen, Lei; Zhou, Fang; Wang, Qiang

    2018-01-01

    Different from traditional thin-film BaTiO3 (BTO) RRAM device with planar structure, individual microfiber-shaped RRAM device, showing promising application potentials in the micro-sized non-volatile memory system, has not been investigated so far to demonstrate resistive switching behavior. In this work, individual sol-gel BTO microfiber has been formed using the draw-bench method, followed by annealing in different atmospheres of air and argon, respectively. The resistive switching characteristics of the individual BTO microfiber have been investigated by employing double-probe SEM measurement system, which shows great convenience to test local electrical properties by modulating the contact sites between the W probes and the BTO microfiber. For the sample annealed in air, the average resistive ON/OFF ratio is as high as 108, enhanced about four orders in comparison with the counterpart that annealed in Argon. For the sample annealed in argon ambience, the weakened resistive ON/OFF ratio can be attributed to the increased presence of oxygen vacancies in the surface of BTO fibers, and the underlying electrical conduction mechanisms are also discussed.

  3. Highly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer

    International Nuclear Information System (INIS)

    Ma, W. J.; Zhang, X. Y.; Wang, Ying; Zheng, Yue; Lin, S. P.; Luo, J. M.; Wang, B.; Li, Z. X.

    2013-01-01

    Nanoscale multilayer structure TiO 2 /BaTiO 3 /TiO 2 has been fabricated on Pt/Ti/SiO 2 /Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO 2 /BaTiO 3 /TiO 2 /Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO 2 play a crucial role in the resistive switching phenomenon and the introduced TiO 2 /BaTiO 3 interfaces result in the high uniformity of bipolar resistive switching characteristics

  4. Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium-Yttrium Mixed Oxide

    Science.gov (United States)

    Ohta, Akio; Goto, Yuta; Wei, Guobin; Murakami, Hideki; Higashi, Seiichiro; Miyazaki, Seiichi

    2011-10-01

    We have studied the chemical bonding features in the region near the TiO2/Pt interface after resistance change to gain a better understanding of the mechanism of resistance switching in TiO2-based resistance random access memory (ReRAM). For the Pt/TiO2/Pt structure after resistance switching, oxidation of the Pt electrode at the Pt/TiO2 interface in switching from a high resistance state (HRS) to a low resistance state (LRS) and reduction of this Pt-oxide in switching from the LRS to the HRS were observed by hard X-ray photoelectron spectroscopy. The result suggests that the generation of oxygen vacancies in the Ti-oxide matrix is responsible for the formation of the conductive pass resulting in the LRS and that repeatable redox reaction at the Pt/TiO2 interface plays an important role in resistance switching behavior. To modify the oxide network, which leads to the change in the conduction pass formation, trivalent Y ions were added to the oxide matrix of quadrivalent Ti ions. Raman scattering and X-ray diffraction measurements show that the crystallization of TiO2 by thermal annealing was suppressed by the Y2O3 addition. In Au/TiYxOy/Pt structures, it has been demonstrated that the variations in resistance switching voltages are markedly suppressed by the Y2O3 addition to TiO2.

  5. Resistive switching characteristics of isolated core-shell iron oxide/germanium nanocrystals epitaxially grown on Si substrates

    Science.gov (United States)

    Matsui, Hideki; Ishibe, Takafumi; Terada, Tsukasa; Sakane, Shunya; Watanabe, Kentaro; Takeuchi, Shotaro; Sakai, Akira; Kimura, Shigeru; Nakamura, Yoshiaki

    2018-01-01

    The core-shell nanostructure of epitaxial Fe3O4 nanocrystals over Ge nuclei showed a large Off/On resistance ratio (˜100), which was the largest value in Fe3O4 materials. The nanocrystals with an average diameter of ˜20 nm were grown epitaxially on Si substrates, whose areal density was high (˜1011 cm-2), and each nanocrystal was isolated from each other. The electrical measurement of the individual isolated nanocrystals by conductive-atomic force microscopy showed the bipolar-type resistive switching in local voltage-current curves, depending on the Fe-O composition. It was also revealed that activation sites for resistive switching were the Fe3O4/Ge interfaces, where electric-field-induced compositional variation caused large resistive changes. This demonstrated the possibility of developing resistance random access memory devices based on ubiquitous materials.

  6. Forming-free resistive switching characteristics of Ag/CeO2/Pt devices with a large memory window

    Science.gov (United States)

    Zheng, Hong; Kim, Hyung Jun; Yang, Paul; Park, Jong-Sung; Kim, Dong Wook; Lee, Hyun Ho; Kang, Chi Jung; Yoon, Tae-Sik

    2017-05-01

    Ag/CeO2(∼45 nm)/Pt devices exhibited forming-free bipolar resistive switching with a large memory window (low-resistance-state (LRS)/high-resistance-state (HRS) ratio >106) at a low switching voltage (104) at a pulse operation (±5 V, 50 μs). The high oxygen ionic conductivity of the CeO2 layer as well as the migration of silver facilitated the formation of filament for the transition to LRS at a low voltage without a high voltage forming operation. Also, a certain amount of defects in the CeO2 layer was required for stable HRS with space-charge-limited-conduction, which was confirmed comparing the devices with non-annealed and annealed CeO2 layers.

  7. Resistive Switching Assisted by Noise

    OpenAIRE

    Patterson, G. A.; Fierens, P. I.; Grosz, D. F.

    2013-01-01

    We extend results by Stotland and Di Ventra on the phenomenon of resistive switching aided by noise. We further the analysis of the mechanism underlying the beneficial role of noise and study the EPIR (Electrical Pulse Induced Resistance) ratio dependence with noise power. In the case of internal noise we find an optimal range where the EPIR ratio is both maximized and independent of the preceding resistive state. However, when external noise is considered no beneficial effect is observed.

  8. Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

    International Nuclear Information System (INIS)

    Huang Da; Wu Jun-Jie; Tang Yu-Hua

    2013-01-01

    With the progress of the semiconductor industry, the resistive random-access memory (RAM) has drawn increasing attention. The discovery of the memristor has brought much attention to this study. Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models. Finally, simulations are presented. We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms, which are applied to explain their resistive switchings

  9. Nanoscale organic ferroelectric resistive switches

    NARCIS (Netherlands)

    Khikhlovskyi, V.; Wang, R.; Breemen, A.J.J.M. van; Gelinck, G.H.; Janssen, R.A.J.; Kemerink, M.

    2014-01-01

    Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their

  10. Intrinsic nanofilamentation in resistive switching

    KAUST Repository

    Wu, Xing

    2013-03-15

    Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

  11. High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure

    Science.gov (United States)

    Kumar, D.; Y Tseng, T.

    2017-12-01

    The bipolar resistive switching properties of SiN based conductive bridge random access memory (CBRAM) device are investigated for non-volatile memory applications in a Cu/Ta/SiN/Cu/SiN/TiN multilayer structure. The device shows good switching characteristics with set voltages between 0.8 V and 1.3 V and reset voltages between -0.3 V and - 0.7 V with a variation of less than 0.1 V. The Cu/Ta/SiN/Cu/SiN/TiN multilayer CBRAM device exhibits excellent memory performance, such as long stable endurance cycles (> 4.5x103) during the test without any degradation, good retention ability (>104 s) at a temperature of 120 °C with more than 102 on/off resistance ratio.

  12. Atomic crystals resistive switching memory

    International Nuclear Information System (INIS)

    Liu Chunsen; Zhang David Wei; Zhou Peng

    2017-01-01

    Facing the growing data storage and computing demands, a high accessing speed memory with low power and non-volatile character is urgently needed. Resistive access random memory with 4F 2 cell size, switching in sub-nanosecond, cycling endurances of over 10 12 cycles, and information retention exceeding 10 years, is considered as promising next-generation non-volatile memory. However, the energy per bit is still too high to compete against static random access memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder the further scaling down. The variation of resistance between different devices and even various cycles in the same device, hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fine interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreover, the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory. (topical reviews)

  13. Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2- x thin films deposited at room temperature

    Science.gov (United States)

    Ismail, Muhammad; Ullah, Rehmat; Hussain, Riaz; Talib, Ijaz; Rana, Anwar Manzoor; Hussain, Muhammad; Mahmood, Khalid; Hussain, Fayyaz; Ahmed, Ejaz; Bao, Dinghua

    2018-02-01

    Cerium oxide (CeO2-x) film was deposited on Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at room temperature. Resistive switching characteristics of these ceria films have been improved by increasing oxygen content during deposition process. Endurance and statistical analyses indicate that the operating stability of CeO2-x-based memory is highly dependent on the oxygen content. Results indicate that CeO2-x film-based RRAM devices exhibit optimum performance when fabricated at an argon/oxygen ratio of 6:24. An increase in the oxygen content introduced during CeO2-x film deposition not only stabilizes the conventional bipolar RS but also improves excellent switching uniformity such as large ON/OFF ratio (102), excellent switching device-to-device uniformity and good sweep endurance over 500 repeated RS cycles. Conduction in the low-resistance state (LRS) as well as in the low bias field region in the high-resistance state (HRS) is found to be Ohmic and thus supports the conductive filament (CF) theory. In the high voltage region of HRS, space charge limited conduction (SCLC) and Schottky emission are found to be the dominant conduction mechanisms. A feasible filamentary RS mechanism based on the movement of oxygen ions/vacancies under the bias voltage has been discussed.

  14. Resistive switching characteristics of Cu/ZnO0.4S0.6/Al devices constructed on plastic substrates.

    Science.gov (United States)

    Han, Yong; Cho, Kyoungah; Kim, Sangsig

    2012-07-01

    In this study, Cu/ZnO0.4S0.6Al devices are fabricated on plastic substrates using the sputtering method at room temperature. The ratio of O/S in the zinc oxysulfide thin film is confirmed to be 0.4/0.6 from the Auger depth profiling. The Cu/ZnO0.4S0.6/Al devices show unipolar resistive switching behaviors and the ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) is above 10(4). The conduction mechanism of the LRS is governed by Ohm's law. On the other hand, in the HRS, the conduction mechanism at low voltages is controlled by Ohm's law, but that at high voltages results from the Poole-Frenkel emission mechanism. The Ohmic and Poole-Frenkel conduction mechanisms observed in the LRS and HRS support the filament model of unipolar resistive switching. The memory characteristics of the Cu/ZnO0.4S0.6/Al devices are retained for 10(4) sec without any change.

  15. Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics.

    Science.gov (United States)

    Park, Sukhyung; Cho, Kyoungah; Jung, Jungwoo; Kim, Sangsig

    2015-10-01

    In this study, we demonstrate the enhancement of the nonlinear resistive switching characteristics of HfO2-based resistive random access memory (ReRAM) devices by carrying out thermal annealing of Al2O3 tunnel barriers. The nonlinearity of ReRAM device with an annealed Al2O3 tunnel barrier is determined to be 10.1, which is larger than that of the ReRAM device with an as-deposited Al2O3 tunnel barrier. From the electrical characteristics of the ReRAM devices with as-deposited and annealed Al2O3 tunnel barriers, it reveals that there is a trade-off relationship between nonlinearity in low-resistance state (LRS) current and the ratio of the high-resistance state (HRS) and the LRS. The enhancement of nonlinearity is attributed to a change in the conduction mechanism in the LRS of the ReRAM after the annealing. While the conduction mechanism before the annealing follows Ohmic conduction, the conduction of the ReRAM after the annealing is controlled by a trap-controlled space charge limited conduction mechanism. Additionally, the annealing of the Al2O3 tunnel barriers is also shown to improve the endurance and retention characteristics.

  16. Effects of Piezoelectric Potential of ZnO on Resistive Switching Characteristics of Flexible ZnO/TiO2 Heterojunction Cells

    Science.gov (United States)

    Li, Hongxia; Zhou, You; Du, Gang; Huang, Yanwei; Ji, Zhenguo

    2018-03-01

    Flexible resistance random access memory (ReRAM) devices with a heterojunction structure of PET/ITO/ZnO/TiO2/Au were fabricated on polyethylene terephthalate/indium tin oxide (PET/ITO) substrates by different physical and chemical preparation methods. X-ray diffraction, scanning electron microscopy and atomic force microscopy were carried out to investigate the crystal structure, surface topography and cross-sectional structure of the prepared films. X-ray photoelectron spectroscopy was also used to identify the chemical state of Ti, O and Zn elements. Theoretical and experimental analyses were conducted to identify the effect of piezoelectric potential of ZnO on resistive switching characteristics of flexible ZnO/TiO2 heterojunction cells. The results showed a pathway to enhance the performance of ReRAM devices by engineering the interface barrier, which is also feasible for other electronics, optoelectronics and photovoltaic devices.

  17. Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

    Directory of Open Access Journals (Sweden)

    Ee Wah Lim

    2015-09-01

    Full Text Available Resistive switching effect in transition metal oxide (TMO based material is often associated with the valence change mechanism (VCM. Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC, trap-assisted tunneling (TAT and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

  18. Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

    Science.gov (United States)

    Panja, Rajeswar; Roy, Sourav; Jana, Debanjan; Maikap, Siddheswar

    2014-12-01

    Impact of the device size and thickness of Al2O3 film on the Cu pillars and resistive switching memory characteristics of the Al/Cu/Al2O3/TiN structures have been investigated for the first time. The memory device size and thickness of Al2O3 of 18 nm are observed by transmission electron microscope image. The 20-nm-thick Al2O3 films have been used for the Cu pillar formation (i.e., stronger Cu filaments) in the Al/Cu/Al2O3/TiN structures, which can be used for three-dimensional (3D) cross-point architecture as reported previously Nanoscale Res. Lett.9:366, 2014. Fifty randomly picked devices with sizes ranging from 8 × 8 to 0.4 × 0.4 μm2 have been measured. The 8-μm devices show 100% yield of Cu pillars, whereas only 74% successful is observed for the 0.4-μm devices, because smaller size devices have higher Joule heating effect and larger size devices show long read endurance of 105 cycles at a high read voltage of -1.5 V. On the other hand, the resistive switching memory characteristics of the 0.4-μm devices with a 2-nm-thick Al2O3 film show superior as compared to those of both the larger device sizes and thicker (10 nm) Al2O3 film, owing to higher Cu diffusion rate for the larger size and thicker Al2O3 film. In consequence, higher device-to-device uniformity of 88% and lower average RESET current of approximately 328 μA are observed for the 0.4-μm devices with a 2-nm-thick Al2O3 film. Data retention capability of our memory device of >48 h makes it a promising one for future nanoscale nonvolatile application. This conductive bridging resistive random access memory (CBRAM) device is forming free at a current compliance (CC) of 30 μA (even at a lowest CC of 0.1 μA) and operation voltage of ±3 V at a high resistance ratio of >104.

  19. Resistance switching in silver - manganite contacts

    International Nuclear Information System (INIS)

    Gomez-Marlasca, F; Levy, P

    2009-01-01

    We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

  20. Resistive switching in Pt/TiO{sub 2}/Pt

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Doo Seok

    2008-08-15

    Recently, the resistive switching behavior in TiO{sub 2} has drawn attention due to its application to resistive random access memory (RRAM) devices. TiO{sub 2} shows characteristic non-volatile resistive switching behavior, i.e. reversible switching between a high resistance state (HRS) and a low resistance state (LRS). Both unipolar resistive switching (URS) and bipolar resistive switching (BRS) are found to be observed in TiO{sub 2} depending on the compliance current for the electroforming. In this thesis the characteristic current-voltage (I-V) hysteresis in three different states of TiO{sub 2}, pristine, URS-activated, and BRS-activated states, was investigated and understood in terms of the migration of oxygen vacancies in TiO{sub 2}. The I-V hysteresis of pristine TiO{sub 2} was found to show volatile behavior. That is, the temporary variation of the resistance took place depending on the applied voltage. However, the I-V hysteresis of URS- and BRS-activated states showed non-volatile resistive switching behavior. Some evidences proving the evolution of oxygen gas during electroforming were obtained from time-of-flight secondary ion mass spectroscopy analysis and the variation of the morphology of switching cells induced by the electroforming. On the assumption that a large number of oxygen vacancies are introduced by the electroforming process, the I-V behavior in electroformed switching cells was simulated with varying the distribution of oxygen vacancies in electroformed TiO{sub x} (x

  1. Bipolar resistive switching in different plant and animal proteins

    KAUST Repository

    Bag, A.

    2014-06-01

    We report bipolar resistive switching phenomena observed in different types of plant and animal proteins. Using protein as the switching medium, resistive switching devices have been fabricated with conducting indium tin oxide (ITO) and Al as bottom and top electrodes, respectively. A clockwise bipolar resistive switching phenomenon is observed in all proteins. It is shown that the resistive switching phenomena originate from the local redox process in the protein and the ion exchange from the top electrode/protein interface.

  2. Resistive switching in TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lin

    2011-10-26

    The continuing improved performance of the digital electronic devices requires new memory technologies which should be inexpensively fabricated for higher integration capacity, faster operation, and low power consumption. Resistive random access memory has great potential to become the front runner as the non volatile memory technology. The resistance states stored in such cell can remain for long time and can be read out none-destructively by a very small electrical pulse. In this work the typically two terminal memory cells containing a thin TiO{sub 2} layer are studied. Polycrystalline TiO{sub 2} thin films are deposited with atomic layer deposition and magnetron reactive sputtering processes, which are both physically and electrically characterized. The resistive switching cells are constructed in a metal/TiO{sub 2}/metal structure. Electroforming process initiate the cell from the beginning good insulator to a real memory cell to program the resistive states. Multilevel resistive bipolar switching controlled by current compliance is the common characteristic observed in these cells, which is potentially to be used as so called multi-bit memory cells to improve the memory capacity. With different top electrodes of Pt, Cu, Ag the resistive switching behaviors are studied. The switching behaviors are different depending on the top metal such as the minimum current compliance, the endurance of the programmed resistance states and the morphology change during the switching. The temperature dependence of different resistance states are investigated. A reduction of the activation energy and their possible conduction mechanisms is discussed on the base of the basic current conduction models. It is found that the resistance state transfers from semiconductor to metallic property with the reducing resistances. The calculated temperature coefficients of their metallic states on the Cu/TiO{sub 2}/Pt and Ag/TiO{sub 2}/Pt are very close to the reported literature data

  3. Bipolar resistive switching behaviors of ITO nanowire networks

    Directory of Open Access Journals (Sweden)

    Qiang Li

    2016-02-01

    Full Text Available We have fabricated indium tin oxide (ITO nanowire (NW networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior. The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs. The x-ray photoelectron spectroscopy was used to obtain the chemical nature from the NWs surface, investigating the oxygen vacancy state. A stable switching voltages and a clear memory window were observed in needle-shaped NWs. The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.

  4. Filamentary model in resistive switching materials

    Science.gov (United States)

    Jasmin, Alladin C.

    2017-12-01

    The need for next generation computer devices is increasing as the demand for efficient data processing increases. The amount of data generated every second also increases which requires large data storage devices. Oxide-based memory devices are being studied to explore new research frontiers thanks to modern advances in nanofabrication. Various oxide materials are studied as active layers for non-volatile memory. This technology has potential application in resistive random-access-memory (ReRAM) and can be easily integrated in CMOS technologies. The long term perspective of this research field is to develop devices which mimic how the brain processes information. To realize such application, a thorough understanding of the charge transport and switching mechanism is important. A new perspective in the multistate resistive switching based on current-induced filament dynamics will be discussed. A simple equivalent circuit of the device gives quantitative information about the nature of the conducting filament at different resistance states.

  5. Resistive switching in Ag-TiO{sub 2} contacts

    Energy Technology Data Exchange (ETDEWEB)

    Ghenzi, N., E-mail: ghenzi@cnea.gov.ar [Gerencia de Investigacion y Aplicaciones, CAC, CNEA, (1650) San Martin, Pcia. de Buenos Aires (Argentina); Stoliar, P. [Gerencia de Investigacion y Aplicaciones, CAC, CNEA, (1650) San Martin, Pcia. de Buenos Aires (Argentina); Escuela de Ciencia y Tecnologia, Campus Migueletes, UNSAM, Pcia. de Buenos Aires (Argentina); Fuertes, M.C. [Gerencia Quimica, CAC, CNEA, (1650) San Martin, Pcia. de Buenos Aires (Argentina); Marlasca, F.G.; Levy, P. [Gerencia de Investigacion y Aplicaciones, CAC, CNEA, (1650) San Martin, Pcia. de Buenos Aires (Argentina)

    2012-08-15

    We study the electric pulse induced resistance switching of TiO{sub 2}-Ag contacts at room temperature, exploring both unipolar and bipolar switching modes. Initially we observed unipolar response. After hundred pulsing cycles the unipolar switching response vanishes but the device can still be operated in bipolar switching regime. The underlying mechanism for resistance switching is modeled in terms of formation and rupture of filament, and movement of oxygen vacancies.

  6. Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering Process.

    Science.gov (United States)

    Yun, Min Ju; Kim, Kyeong Heon; Kim, Sungho; Kim, Hee-Dong

    2018-09-01

    In recent research of resistive random access memory (RRAM), solving the degradation phenomenon induced by both a high forming voltage to form the conducting filaments (CFs) and a high reset current is one of the main issues encountered. In this study, to overcome these problems, we propose forming-free bipolar resistive switching (BRS) behaviors by employing an ITO film with abundant oxygen vacancies, instead of conventional CF based RRAM requiring a forming process, and systematically investigate the feasibility of forming free BRS behaviors and a possible switching mechanism. Compared to conventional CF based RRAM devices, it is possible for the proposed devices to achieve stable BRS properties (i.e., narrow variations of operating current and voltage, and retention) without the forming process, under an operating current of sub-nano ampere. In addition, the proposed cell shows a stable hysteresis of current-voltage curves, which is well matched with the Poole-Frenkel emission, and currents at a low voltage are limited due to a formed barrier height like Schottky diode between the active layer and electrodes.

  7. Photo-stimulated resistive switching of ZnO nanorods

    International Nuclear Information System (INIS)

    Park, Jinjoo; Lee, Seunghyup; Yong, Kijung

    2012-01-01

    Resistive switching memory devices are promising candidates for emerging memory technologies because they yield outstanding device performance. Storage mechanisms for achieving high-density memory applications have been developed; however, so far many of them exhibit typical resistive switching behavior from the limited controlling conditions. In this study, we introduce photons as an unconventional stimulus for activating resistive switching behaviors. First, we compare the resistive switching behavior in light and dark conditions to describe how resistive switching memories can benefit from photons. Second, we drive the switching of resistance not by the electrical stimulus but only by the modulation of photon. ZnO nanorods were employed as a model system to demonstrate photo-stimulated resistive switching in high-surface-area nanomaterials, in which photo-driven surface states strongly affect their photoconductivity and resistance states. (paper)

  8. Switching Characteristics of Ferroelectric Transistor Inverters

    Science.gov (United States)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  9. Charge transport and bipolar switching mechanism in a Cu/HfO2/Pt resistive switching cell

    International Nuclear Information System (INIS)

    Tan Tingting; Guo Tingting; Wu Zhihui; Liu Zhengtang

    2016-01-01

    Bipolar resistance switching characteristics are investigated in Cu/sputtered-HfO 2 /Pt structure in the application of resistive random access memory (RRAM). The conduction mechanism of the structure is characterized to be SCLC conduction. The dependence of resistances in both high resistance state (HRS) and low resistance state (LRS) on the temperature and device area are studied. Then, the composition and chemical bonding state of Cu and Hf at Cu/HfO 2 interface region are analyzed by x-ray photoelectron spectroscopy (XPS). Combining the electrical characteristics and the chemical structure at the interface, a model for the resistive switching effect in Cu/HfO 2 /Pt stack is proposed. According to this model, the generation and recovery of oxygen vacancies in the HfO 2 film are responsible for the resistance change. (paper)

  10. Improved multi-level capability in Si3N4-based resistive switching memory using continuous gradual reset switching

    Science.gov (United States)

    Kim, Sungjun; Park, Byung-Gook

    2017-01-01

    In this letter, we compare three different types of reset switching behavior in a bipolar resistive random-access memory (RRAM) system that is housed in a Ni/Si3N4/Si structure. The abrupt, step-like gradual and continuous gradual reset transitions are largely determined by the low-resistance state (LRS). For abrupt reset switching, the large conducting path shows ohmic behavior or has a weak nonlinear current-voltage (I-V) characteristics in the LRS. For gradual switching, including both the step-like and continuous reset types, trap-assisted direct tunneling is dominant in the low-voltage regime, while trap-assisted Fowler-Nordheim tunneling is dominant in the high-voltage regime, thus causing nonlinear I-V characteristics. More importantly, we evaluate the multi-level capabilities of the two different gradual switching types, including both step-like and continuous reset behavior, using identical and incremental voltage conditions. Finer control of the conductance level with good uniformity is achieved in continuous gradual reset switching when compared to that in step-like gradual reset switching. For continuous reset switching, a single conducting path, which initially has a tunneling gap, gradually responds to pulses with even and identical amplitudes, while for step-like reset switching, the multiple conducting paths only respond to incremental pulses to obtain effective multi-level states.

  11. Natural DNA-Based Nonvolatile Resistive Switching Memory (Preprint)

    Science.gov (United States)

    2017-12-06

    AFRL-RX-WP-JA-2017-0510 NATURAL DNA-BASED NONVOLATILE RESISTIVE SWITCHING MEMORY (PREPRINT) Huei-Yau Jeng, Tzu-Chien Yang , Li...2017 Interim 24 January 2014 – 6 November 2017 4. TITLE AND SUBTITLE NATURAL DNA-BASED NONVOLATILE RESISTIVE SWITCHING MEMORY (PREPRINT) 5a...study, we present a resistive switching memory device based on natural DNA biomaterial. The structure consists of a DNA layer sandwiched by two

  12. Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices.

    Science.gov (United States)

    Wan, Tao; Qu, Bo; Du, Haiwei; Lin, Xi; Lin, Qianru; Wang, Da-Wei; Cazorla, Claudio; Li, Sean; Liu, Sidong; Chu, Dewei

    2018-02-15

    Resistive switching behaviour can be classified into digital and analog switching based on its abrupt and gradual resistance change characteristics. Realizing the transition from digital to analog switching in the same device is essential for understanding and controlling the performance of the devices with various switching mechanisms. Here, we investigate the resistive switching in a device made with strontium titanate (SrTiO 3 ) nanoparticles using X-ray diffractometry, scanning electron microscopy, Raman spectroscopy, and direct electrical measurements. It is found that the well-known rupture/formation of Ag filaments is responsible for the digital switching in the device with Ag as the top electrode. To modulate the switching performance, we insert a reduced graphene oxide layer between SrTiO 3 and the bottom FTO electrode owing to its good barrier property for the diffusion of Ag ions and high out-of-plane resistance. In this case, resistive switching is changed from digital to analog as determined by the modulation of interfacial resistance under applied voltage. Based on that controllable resistance, potentiation and depression behaviours are implemented as well. This study opens up new ways for the design of multifunctional devices which are promising for memory and neuromorphic computing applications. Copyright © 2017 Elsevier Inc. All rights reserved.

  13. Resistance switching in epitaxial SrCoOx thin films

    Science.gov (United States)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-08-01

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO3 (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO2.5) and conducting perovskite (SrCoO3-δ) depending on the oxygen content. The current-voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoOx thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO2.5.

  14. Resistance switching in epitaxial SrCoOx thin films

    International Nuclear Information System (INIS)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-01-01

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO 3 (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO 2.5 ) and conducting perovskite (SrCoO 3−δ ) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO x thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO 2.5

  15. Improvement of resistive switching in ZnO film by Ti doping

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongxia; Chen, Qi; Chen, Xueping [Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018 (China); Mao, Qinan [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Xi, Junhua [Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018 (China); State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Ji, Zhenguo, E-mail: jizg@hdu.edu.cn [Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018 (China); State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

    2013-06-30

    Pt/ZnO:Ti/n{sup +}–Si structures that showed reversible and steady resistive switching behaviors were fabricated by magnetron sputtering. The stability of the devices was improved by Ti doping and the switching mechanism of the resistive switching was theoretically studied under the guidance of the first principles. The influences of different Ti atomic doping concentrations on the crystal structure and resistive switching characteristics were also investigated. The results revealed that the oxygen vacancy appears easily around the Ti ions since the formation energies of oxygen vacancies had the minimum value when it located at the next nearest neighboring to Ti atoms. - Highlights: • ZnO:Ti based resistive random access memories were fabricated. • Effects of doping concentrations on the switching characteristics were investigated. • Formation energies of oxygen vacancy in ZnO were studied by the first-principles. • The Pt/ZnO:Ti(2%)/n{sup +}–Si cell has the optimal resistive switching characteristics.

  16. Impact of deposition parameters on the performance of ceria based resistive switching memories

    International Nuclear Information System (INIS)

    Zhang, Lepeng; Younis, Adnan; Chu, Dewei; Li, Sean

    2016-01-01

    Resistive-switching memories stacked in a metal–insulator–metal (MIM) like structure have shown great potential for next generation non-volatile memories. In this study, ceria based resistive memory stacks are fabricated by implementing different sputter conditions (temperatures and powers). The films deposited at low temperatures were found to have random grain orientations, less porosity and dense structure. The effect of deposition conditions on resistive switching characteristics of as-prepared films were also investigated. Improved and reliable resistive switching behaviors were achieved for the memory devices occupying less porosity and densely packed structures prepared at low temperatures. Finally, the underlying switching mechanism was also explained on the basis of quantitative analysis. (paper)

  17. Unipolar resistive switching behaviors in amorphous lutetium oxide films

    Science.gov (United States)

    Gao, Xu; Xia, Yidong; Xu, Bo; Kong, Jizhou; Guo, Hongxuan; Li, Kui; Li, Haitao; Xu, Hanni; Chen, Kai; Yin, Jiang; Liu, Zhiguo

    2010-10-01

    The resistive switching properties in the amorphous Lu2O3 films deposited by pulsed laser deposition have been investigated. Well unipolar switching behaviors of Pt/Lu2O3/Pt stacks were obtained. The memory cells exhibited a high resistance ratio over 1×103, fast programming speed within 30 ns, and no obvious degradation after an endurance of 300 switching cycles and a duration of 3.2×106 s. The first-principles calculation indicates that the oxygen vacancies in cubic Lu2O3 will form defective energy level below the bottom of conduction band, and reduce the band gap. The absence of grain boundaries in the amorphous Lu2O3 films helps us attribute the switching mechanism of such stacks to the possible redistribution of defects related to oxygen vacancies along the filamentary paths during the resistive switching process.

  18. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, M.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  19. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, Martijn; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  20. Resistance switching characteristics of core–shell γ-Fe{sub 2}O{sub 3}/Ni{sub 2}O{sub 3} nanoparticles in HfSiO matrix

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Guangdong [Guizhou Institute of Technology, Guiyang 550003 (China); Wu, Bo, E-mail: fqwubo@zync.edu.cn [Institute of Theoretical Physics, Zunyi Normal College, Zunyi 563002 (China); School of Marine Science and Technology, Northwestern Polytechnical University, Xian 710072 (China); Liu, Xiaoqin; Li, Zhiling; Zhang, Shuangju [Guizhou Institute of Technology, Guiyang 550003 (China); Zhou, Ankun [Kunming Institute of Botany, Chineses Academy Sciences, Kunming 650201 (China); Yang, Xiude [Institute of Theoretical Physics, Zunyi Normal College, Zunyi 563002 (China)

    2016-09-05

    Core–shell γ-Fe{sub 2}O{sub 3}/Ni{sub 2}O{sub 3} nanoparticles are synthesized by chemical co-precipitation method. Resistive switching memory behaviors, which have resistance ON/OFF ratio of ∼10{sup 2} and excellent retention property, are observed in the Au/HfSiO/γ-Fe{sub 2}O{sub 3}/Ni{sub 2}O{sub 3}/HfSiO/Pt structure. Space charge limited current (SCLC) mechanism, which is supported by the fitting current–voltage results, is employed to know the resistive switching memory effects. The transportation of Oxygen vacancy Vo{sup 2+}, oxygen ion O{sup 2−}, recombination of oxygen atom and drive of external electric field are responsible for the ON or OFF states observed in device. - Highlights: • Bipolar resistance switching effects are detected in core–shell of γ-Fe{sub 2}O{sub 3}@Ni{sub 2}O{sub 3}. • The Ohimc conduction and space-charge-limited current play an important role in Low/High field. • Rapture of filament assisted by Vo{sup 2+}, O{sup 2−} and O{sub 2} recombination is responsible for switching. • Resistance switching memory highlights excellent retention properties after stress 100 cycles.

  1. Role of Al doping in the filament disruption in HfO2 resistance switches

    Science.gov (United States)

    Brivio, Stefano; Frascaroli, Jacopo; Spiga, Sabina

    2017-09-01

    Resistance switching devices, whose operation is driven by formation (SET) and dissolution (RESET) of conductive paths shorting and disconnecting the two metal electrodes, have recently received great attention and a deep general comprehension of their operation has been achieved. However, the link between switching characteristics and material properties is still quite weak. In particular, doping of the switching oxide layer has often been investigated only for looking at performance upgrade and rarely for a meticulous investigation of the switching mechanism. In this paper, the impact of Al doping of HfO2 devices on their switching operations, retention loss mechanisms and random telegraph noise traces is investigated. In addition, phenomenological modeling of the switching operation is performed for device employing both undoped and doped HfO2. We demonstrate that Al doping influences the filament disruption process during the RESET operation and, in particular, it contributes in preventing an efficient restoration of the oxide with respect to undoped devices.

  2. Low Temperature Resistive Switching Behavior in a Manganite

    Science.gov (United States)

    Salvo, Christopher; Lopez, Melinda; Tsui, Stephen

    2012-02-01

    The development of new nonvolatile memory devices remains an important field of consumer electronics. A possible candidate is bipolar resistive switching, a method by which the resistance of a material changes when a voltage is applied. Although there is a great deal of research on this topic, not much has been done at low temperatures. In this work, we compare the room temperature and low temperature behaviors of switching in a manganite thin film. The data indicates that the switching is suppressed upon cooling to cryogenic temperatures, and the presence of crystalline charge traps is tied to the physical mechanism.

  3. Resistance switching of thin AlOx and Cu-doped-AlOx films

    International Nuclear Information System (INIS)

    Wu, Ya-Ting; Jou, Shyankay; Yang, Ping-Jung

    2013-01-01

    Thin copper-doped aluminum oxide (Cu-doped-AlO x ) and AlO x films of about 5 nm thick were generated by oxidizing the surfaces of Al and Al-5 wt.% Cu (Al-Cu) films in an oxygen plasma. According to X-ray photoelectron spectroscopy analyses, these two oxide films were found to be deficient in oxygen and had gradient concentrations of Al and O. The oxide films were employed as resistor layers sandwiched between an Al top electrode and an Al or Al-Cu bottom electrode to form resistive memory devices. The devices demonstrated unipolar resistance switching between high resistance state and low resistance state (LRS), and their resistance ratios measured at + 0.2 V were around 10 5 . Furthermore, their current–voltage characteristics showed ohmic conduction with the resistance increasing with temperature, in LRS. Conductive filaments were thought to form inside the AlO x film and the Cu-doped AlO x film, causing resistive switching. The resistive memory device using the AlO x film had unstable switching behaviors during cyclic testing, whereas the device using the Cu-doped AlO x film demonstrated stable resistance switching during 100 cycles of testing. The presence of the Cu ingredient in the AlO x film is likely to facilitate the formation and rupture of conductive filaments and induced stable resistance switching. - Highlights: • AlO x layers are formed by plasma oxidation for resistance memory device (RRAM). • Al/AlO x /Al and Al/AlO x -CuO x /Al-Cu exhibit unipolar resistance switching. • Cu doping assists formation of the filaments of mixed Al and Cu in AlO x . • Cu doping improves endurance and retention of the AlO x -based RRAM

  4. Copper oxide resistive switching memory for e-textile

    Directory of Open Access Journals (Sweden)

    Jin-Woo Han

    2011-09-01

    Full Text Available A resistive switching memory suitable for integration into textiles is demonstrated on a copper wire network. Starting from copper wires, a Cu/CuxO/Pt sandwich structure is fabricated. The active oxide film is produced by simple thermal oxidation of Cu in atmospheric ambient. The devices display a resistance switching ratio of 102 between the high and low resistance states. The memory states are reversible and retained over 107 seconds, with the states remaining nondestructive after multiple read operations. The presented device on the wire network can potentially offer a memory for integration into smart textile.

  5. Electronic bipolar resistive switching behavior in Ni/VOx/Al device

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Mengseng [School of Electronic Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130 (China); School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China); Zhang, Kailiang, E-mail: kailiang_zhang@163.com [School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China); Yang, Ruixia, E-mail: yangrx@hebut.edu.cn [School of Electronic Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130 (China); Wang, Fang; Zhang, Zhichao; Wu, Shijian [School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China)

    2017-07-15

    Highlights: • The resistive random access memory of Ni/VOx/Al was fabricated. • The device has the electronic bipolar resistive switching characteristic. • The activity energy (Ea) of HRS has been calculated. • The reasons of the degradation of the resistance ratio of HRS/LRS were analyzed. - Abstract: In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I–V curves for HRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics.

  6. Electronic bipolar resistive switching behavior in Ni/VOx/Al device

    International Nuclear Information System (INIS)

    Xia, Mengseng; Zhang, Kailiang; Yang, Ruixia; Wang, Fang; Zhang, Zhichao; Wu, Shijian

    2017-01-01

    Highlights: • The resistive random access memory of Ni/VOx/Al was fabricated. • The device has the electronic bipolar resistive switching characteristic. • The activity energy (Ea) of HRS has been calculated. • The reasons of the degradation of the resistance ratio of HRS/LRS were analyzed. - Abstract: In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I–V curves for HRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics.

  7. Fatigue behavior of resistive switching in a BiFeO3 thin film

    Science.gov (United States)

    Zhu, Hui; Yang, Ying; Jiang, Anquan; Bai, Zilong; Meng, Xiao; Feng, Shiwei

    2018-04-01

    The change of the resistive switching effect in an Au/BiFeO3/SrRuO3 structure under repetitive switching was studied. The current-voltage characteristics indicated space-charge-limited (SCL) conduction. The transition voltage from ohmic to SCL, voltage of the trap-filled limit, and resistance increased with switching cycle number in the wake-up stage. Such changes were attributed to the increase of trap density caused by the release of polarization domains. Ohmic and SCL currents increased with switching cycle number after fatigue, indicating that charge carrier density increased because of oxygen vacancy generation. The change of transition voltage from ohmic to SCL showed a consistent trend.

  8. Bipolar resistive switching and charge transport in silicon oxide memristor

    Energy Technology Data Exchange (ETDEWEB)

    Mikhaylov, Alexey N., E-mail: mian@nifti.unn.ru [Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950 (Russian Federation); Belov, Alexey I.; Guseinov, Davud V.; Korolev, Dmitry S.; Antonov, Ivan N.; Efimovykh, Denis V.; Tikhov, Stanislav V.; Kasatkin, Alexander P.; Gorshkov, Oleg N.; Tetelbaum, David I.; Bobrov, Alexander I.; Malekhonova, Natalia V.; Pavlov, Dmitry A. [Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950 (Russian Federation); Gryaznov, Evgeny G. [Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950 (Russian Federation); Sedakov Scientific-Research Institute, GSP-486, Nizhny Novgorod 603950 (Russian Federation); Yatmanov, Alexander P. [Sedakov Scientific-Research Institute, GSP-486, Nizhny Novgorod 603950 (Russian Federation)

    2015-04-15

    Graphical abstract: - Highlights: • Si-based thin-film memristor structure was fabricated by magnetron sputtering. • We study bipolar resistive switching and charge transport mechanisms. • Resistive switching parameters are determined by a balance between redox reactions. - Abstract: Reproducible bipolar resistive switching has been studied in SiO{sub x}-based thin-film memristor structures deposited by magnetron sputtering technique on the TiN/Ti metalized SiO{sub 2}/Si substrates. It is established that, after electroforming, the structure can be switched between the quasi-ohmic low-resistance state related to silicon chains (conducting filaments) and the high-resistance state with semiconductor-like hopping mechanism of charge transport through the defects in silicon oxide. The switching parameters are determined by a balance between the reduction and oxidation processes that, in turn, are driven by the value and polarity of voltage bias, current, temperature and device environment. The results can be used for the development of silicon-based nonvolatile memory and memristive systems as a key component of future electronics.

  9. Effects of sol aging on resistive switching behaviors of HfO{sub x} resistive memories

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Chih-Chieh, E-mail: cchsu@yuntech.edu.tw [Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliu 64002, Taiwan, ROC (China); Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliu 64002, Taiwan, ROC (China); Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu 64002, Taiwan, ROC (China); Sun, Jhen-Kai; Tsao, Che-Chang; Chen, Yu-Ting [Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu 64002, Taiwan, ROC (China)

    2017-03-01

    This work investigates effects of long-term sol-aging time on sol-gel HfO{sub x} resistive random access memories (RRAMs). A nontoxic solvent of ethanol is used to replace toxic 2-methoxyethanol, which is usually used in sol-gel processes. The top electrodes are fabricated by pressing indium balls onto the HfO{sub x} surface rather than by using conventional sputtering or evaporation processes. The maximum process temperature is limited to be 100 ℃. Therefore, influences of plasma and high temperature on HfO{sub x} film can be avoided. Under this circumstance, effects of sol aging time on the HfO{sub x} films can be more clearly studied. The current conduction mechanisms in low and high electric regions of the HfO{sub x} RRAM are found to be dominated by Ohmic conduction and trap-filled space charge limited conduction (TF-SCLC), respectively. When the sol aging time increases, the resistive switching characteristic of the HfO{sub x} layer becomes unstable and the transition voltage from Ohmic conduction to TF-SCLC is also increased. This suggests that an exceedingly long aging time will give a HfO{sub x} film with more defect states. The XPS results are consistent with FTIR analysis and they can further explain the unstable HfO{sub x} resistive switching characteristic induced by sol aging.

  10. Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

    KAUST Repository

    Hota, Mrinal Kanti

    2015-02-23

    Reproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.

  11. The dissimilar resistive switching properties in ZnO-Co and ZnO films

    Science.gov (United States)

    Li, Xiaoli; Shi, Yana; Li, Jie; Bai, Yuhao; Jia, Juan; Li, Yanchun; Xu, Xiaohong

    2017-03-01

    Nanostructured ZnO-Co and ZnO films with Pt, Cu, and Co as top electrodes, and Pt as bottom electrodes were grown by magnetron sputtering. Both ZnO-Co and ZnO films show bipolar resistive switching characteristics. The resistive switching properties of ZnO films are strongly dependent on the top electrode materials. The effect of top electrodes on resistive switching of ZnO-Co films is weakened due to the dominant roles of Co particles in the films. It is different with ZnO films that the ZnO-Co film shows a forming-free process. The calculation from the classical electromagnetism theory indicates that the existence of Co nanoparticles in the ZnO switching matrix can enhance the local electrical field to some extent, and decrease the operating voltages. So the device with a ZnO-Co film as a switching matrix can significantly reduce power consumption, weaken the dependence of the electrode materials, and optimize the resistive switching performance.

  12. Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure.

    Science.gov (United States)

    Li, Yingtao; Yuan, Peng; Fu, Liping; Li, Rongrong; Gao, Xiaoping; Tao, Chunlan

    2015-10-02

    Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO₂/TiO₂/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (volatile resistive switching with a rectifying ratio over 10(6). The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μA. Furthermore, by using different reset voltages, the Cu/ZrO₂/TiO₂/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO₂/TiO₂/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors.

  13. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

    Science.gov (United States)

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-08-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

  14. Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices

    International Nuclear Information System (INIS)

    Kim, Seonghyun; Park, Jubong; Jung, Seungjae; Lee, Wootae; Shin, Jungho; Hwang, Hyunsang; Lee, Daeseok; Woo, Jiyong; Choi, Godeuni

    2012-01-01

    In this study, we propose a new and effective methodology for improving the resistive-switching performance of memory devices by high-pressure hydrogen annealing under ambient conditions. The reduction effect results in the uniform creation of oxygen vacancies that in turn enable forming-free operation and afford uniform switching characteristics. In addition, H + and mobile hydroxyl (OH − ) ions are generated, and these induce fast switching operation due to the higher mobility compared to oxygen ions. Defect engineering, specifically, the introduction of hydrogen atom impurities, improves the device performance for metal–oxide-based resistive-switching random access memory devices. (paper)

  15. Resistance switching at the nanometre scale in amorphous carbon

    International Nuclear Information System (INIS)

    Sebastian, Abu; Rossel, Christophe; Pozidis, Haralampos; Eleftheriou, Evangelos; Pauza, Andrew; Shelby, Robert M; RodrIguez, Arantxa Fraile

    2011-01-01

    The electrical transport and resistance switching mechanism in amorphous carbon (a-C) is investigated at the nanoscale. The electrical conduction in a-C thin films is shown to be captured well by a Poole-Frenkel transport model that involves nonisolated traps. Moreover, at high electric fields a field-induced threshold switching phenomenon is observed. The following resistance change is attributed to Joule heating and subsequent localized thermal annealing. We demonstrate that the mechanism is mostly due to clustering of the existing sp 2 sites within the sp 3 matrix. The electrical conduction behaviour, field-induced switching and Joule-heating-induced rearrangement of atomic order resulting in a resistance change are all reminiscent of conventional phase-change memory materials. This suggests the potential of a-C as a similar nonvolatile memory candidate material.

  16. A nonlinear HP-type complementary resistive switch

    Directory of Open Access Journals (Sweden)

    Paul K. Radtke

    2016-05-01

    Full Text Available Resistive Switching (RS is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the latter, high integration densities favor the anti-serial combination of two RS-elements to a single cell, termed the complementary resistive switch (CRS. Motivated by the irregular shape of the filament protruding into the device, we suggest a nonlinearity in the resistance-interpolation function, characterized by a single parameter p. Thereby the original HP-memristor is expanded upon. We numerically simulate and analytically solve this model. Further, the nonlinearity allows for its application to the CRS.

  17. Optimal antiviral switching to minimize resistance risk in HIV therapy.

    Directory of Open Access Journals (Sweden)

    Rutao Luo

    Full Text Available The development of resistant strains of HIV is the most significant barrier to effective long-term treatment of HIV infection. The most common causes of resistance development are patient noncompliance and pre-existence of resistant strains. In this paper, methods of antiviral regimen switching are developed that minimize the risk of pre-existing resistant virus emerging during therapy switches necessitated by virological failure. Two distinct cases are considered; a single previous virological failure and multiple virological failures. These methods use optimal control approaches on experimentally verified mathematical models of HIV strain competition and statistical models of resistance risk. It is shown that, theoretically, order-of-magnitude reduction in risk can be achieved, and multiple previous virological failures enable greater success of these methods in reducing the risk of subsequent treatment failures.

  18. Asymmetric bipolar resistive switching in solution-processed Pt/TiO{sub 2}/W devices

    Energy Technology Data Exchange (ETDEWEB)

    Biju, Kuyyadi P; Bourim, El Mostafa; Hwang, Hyunsang [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Korea, Republic of); Liu, XinJun; Kim, Insung; Jung, Seungjae; Siddik, Manzar; Lee, Joonmyoung, E-mail: biju@gist.ac.k, E-mail: hwanghs@gist.ac.k [School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Korea, Republic of)

    2010-12-15

    The resistive switching characteristics of Pt/TiO{sub 2}/W devices in a submicrometre via-hole structure are investigated. TiO{sub 2} film is grown by the sol-gel spin coating technique. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO{sub 2} interface limits electron injection under reverse bias resulting in a rectification ratio of >60 at 2 V in the low-resistance state. The switching mechanism in our device can be interpreted as an anion migration-induced redox reaction at the tungsten bottom electrode (W). The rectifying effect can significantly reduce the sneak path current in a crossbar array and provide a feasible way to achieve high memory density.

  19. Resistance switching of an individual Ag2S/Ag nanowire heterostructure

    International Nuclear Information System (INIS)

    Liang Changhao; Terabe, Kazuya; Hasegawa, Tsuyoshi; Aono, Masakazu

    2007-01-01

    Ag/Cu-based chalcogenide ionic conductors are candidates for use in applications in resistance-switching and nonvolatile memory devices. We report the investigation of the electrical properties of individual Ag 2 S/Ag heteronanowires (HNWs) by atomic force microscopy (AFM) using a nanoscale-tip electrode. Hysteretic current-voltage (IV) curves and the polarity-dependent resistance-switching phenomenon in an individual Ag 2 S/Ag HNW were observed. A local impedance spectroscopy measurement of Ag 2 S/Ag HNWs was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the electrode/mixed conductor. It is proposed that reversible resistance switching originates from the creation and rupture of filament-like conducting pathways inside the Ag 2 S/Ag HNW

  20. Controlling friction in a manganite surface by resistive switching

    OpenAIRE

    Schmidt, Hendrik; Krisponeit, Jon-Olaf; Samwer, Konrad; Volkert, Cynthia A.

    2016-01-01

    We report a significant change in friction of a $\\rm La_{0.55}Ca_{0.45}MnO_3$ thin film measured as a function of the materials resistive state under ultrahigh vacuum conditions at room temperature by friction force microscopy. While friction is high in the insulating state, it clearly changes to lower values if the probed local region is switched to the conducting state via nanoscale resistance switching. Thus we demonstrate active control of friction without having to change the temperature...

  1. Resistance switching induced by electric fields in manganite thin films

    International Nuclear Information System (INIS)

    Villafuerte, M; Juarez, G; Duhalde, S; Golmar, F; Degreef, C L; Heluani, S P

    2007-01-01

    In this work, we investigate the polarity-dependent Electric Pulses Induced Resistive (EPIR) switching phenomenon in thin films driven by electric pulses. Thin films of 0.5 Ca 0.5 MnO 3 (manganite) were deposited by PLD on Si substrate. The transport properties at the interface between the film and metallic electrode are characterized in order to study the resistance switching. Sample thermal treatment and electrical field history are important to be considered for get reproducible EPIR effect. Carriers trapping at the interfaces are considered as a possible explanation of our results

  2. Stable switching of resistive random access memory on the nanotip array electrodes

    KAUST Repository

    Tsai, Kun-Tong

    2016-09-13

    The formation/rupture of conducting filaments (CFs) in resistive random access memory (ReRAM) materials tune the electrical conductivities non-volatilely and are largely affected by its material composition [1], internal configurations [2] and external environments [3,4]. Therefore, controlling repetitive formation/rupture of CF as well as the spatial uniformity of formed CF are fundamentally important for improving the resistive switching (RS) performance. In this context, we have shown that by adding a field initiator, typically a textured electrode, both performance and switching uniformity of ReRAMs can be improved dramatically [5]. In addition, despite its promising characteristics, the scalable fabrication and structural homogeneity of such nanostructured electrodes are still lacking or unattainable, making miniaturization of ReRAM devices an exceeding challenge. Here, we employ nanostructured electrode (nanotip arrays, extremely uniform) formed spontaneously via a self-organized process to improve the ZnO ReRAM switching characteristics.

  3. Complementary resistive switching in BaTiO{sub 3}/NiO bilayer with opposite switching polarities

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuo [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Institut d’Electronique de Micro-électronique et de Nanotechnologie (IEMN), CNRS, Université des Sciences et Technologies de Lille, avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq cedex (France); Wei, Xianhua, E-mail: weixianhua@swust.edu.cn [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Lei, Yao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yuan, Xincai [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Zeng, Huizhong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China)

    2016-12-15

    Graphical abstract: Au/BaTiO{sub 3}/NiO/Pt bilayer device shows complementary resistive switching (CRS) without electroforming which is mainly ascribed to anti-serial stack of two RRAM cells with bipolar behaviors. - Highlights: • Complementary resistive switching (CRS) has been investigated in Au/BaTiO{sub 3}/NiO/Pt by stacking the two elements with different switching types. • The realization of complementary resistive switching (CRS) is mainly ascribed to the anti-serial stack of two RRAM cells with bipolar behaviors. • Complementary resistive switching (CRS) in bilayer is effective to solve the sneak current problem briefly and economically. - Abstract: Resistive switching behaviors have been investigated in the Au/BaTiO{sub 3}/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO{sub 3} thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I–V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO{sub 3} and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

  4. Dynamical behaviour of the resistive switching in ceramic YBCO/metal interfaces

    International Nuclear Information System (INIS)

    Acha, C

    2011-01-01

    Studies related to the dynamics of resistive switching (RS) in ceramic YBCO/metal interfaces were performed. The change in interface resistance during the application of square pulses and its current-voltage (I-V) characteristics were measured. The obtained non-linear current dependence of the differential resistance can be very well reproduced by modelling the electrical behaviour of the interface with simple circuit elements. The RS produces defined changes in the parameters of the circuit model that reveal the particular dynamics of the mechanism beneath the resistance change in complex oxide/metal interfaces.

  5. Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius.

    Science.gov (United States)

    Choi, Jaeho; Le, Quyet Van; Hong, Kootak; Moon, Cheon Woo; Han, Ji Su; Kwon, Ki Chang; Cha, Pil-Ryung; Kwon, Yongwoo; Kim, Soo Young; Jang, Ho Won

    2017-09-13

    It was demonstrated that organolead halide perovskites (OHPs) show a resistive switching behavior with an ultralow electric field of a few kilovolts per centimeter. However, a slow switching time and relatively short endurance remain major obstacles for the realization of the next-generation memory. Here, we report a performance-enhanced OHP resistive switching device. To fabricate topologically and electronically improved OHP thin films, we added hydroiodic acid solution (for an additive) in the precursor solution of the OHP. With drastically improved morphology such as small grain size, low peak-to-valley depth, and precise thickness, the OHP thin films showed an excellent performance as insulating layers in Ag/CH 3 NH 3 PbI 3 /Pt cells, with an endurance of over 10 3 cycles, a high on/off ratio of 10 6 , and an operation speed of 640 μs and without electroforming. We suggest plausible resistive switching and conduction mechanisms with current-voltage characteristics measured at various temperatures and with different top electrodes and device structures. Beyond the extended endurance, highly flexible resistive switching devices with a minimum bending radius of 5 mm create opportunities for use in flexible and wearable electronic devices.

  6. The function of buffer layer in resistive switching device.

    Czech Academy of Sciences Publication Activity Database

    Zhang, B.; Prokop, V.; Střižík, L.; Zima, Vítězslav; Kutálek, P.; Vlček, Milan; Wágner, T.

    2017-01-01

    Roč. 14, č. 8 (2017), s. 291-295 ISSN 1584-8663 Institutional support: RVO:61389013 Keywords : resistive switching * chalcogenide glasses * buffer layer Subject RIV: CA - Inorganic Chemistry Impact factor: 0.732, year: 2016 http://www.chalcogen.ro/291_ZhangB.pdf

  7. A study on the resistance switching of Ag2Se and Ta2O5 heterojunctions using structural engineering

    Science.gov (United States)

    Lee, Tae Sung; Lee, Nam Joo; Abbas, Haider; Hu, Quanli; Yoon, Tae-Sik; Lee, Hyun Ho; Le Shim, Ee; Kang, Chi Jung

    2018-01-01

    The resistive random access memory (RRAM) devices with heterostuctures have been investigated due to cycling stability, nonlinear switching, complementary resistive switching and self-compliance. The heterostructured devices can modulate the resistive switching (RS) behavior appropriately by bilayer structure with a variety of materials. In this study, the bipolar resistive switching characteristics of the bilayer structures composed of Ta2O5 and Ag2Se, which are transition-metal oxide (TMO) and silver chalcogenide, were investigated. The bilayer devices of Ta2O5 deposited on Ag2Se (Ta2O5/Ag2Se) and Ag2Se deposited on Ta2O5 (Ag2Se/Ta2O5) were fabricated for investigation of the RS characteristics by stacking sequence of Ta2O5 and Ag2Se. All operating voltages were applied to the Ag top electrode with the Pt bottom electrode grounded. The Ta2O5/Ag2Se device showed that a negative voltage sweep switched the device from high resistance state (HRS) to low resistance state (LRS) and a positive voltage sweep switched the device from LRS to HRS. On the contrary, for the Ag2Se/Ta2O5 device a positive voltage sweep switched the device from HRS to LRS, and a negative voltage sweep switched it from LRS to HRS. The polarity dependence of RS was attributed to the stacking sequence of Ta2O5 and Ag2Se. In addition, the combined heterostructured device of both bilayer stacks, Ta2O5/Ag2Se and Ag2Se/Ta2O5, exhibited the complementary switching characteristics. By using threshold switching devices, sneak path leakage can be reduced without additional selectors. The bilayer heterostructures of Ta2O5 and Ag2Se have various advantages such as self-compliance, reproducibility and forming-free stable RS. It confirms the possible applications of TMO and silver chalcogenide heterostructures in RRAM.

  8. Random telegraph noise and resistance switching analysis of oxide based resistive memory.

    Science.gov (United States)

    Choi, Shinhyun; Yang, Yuchao; Lu, Wei

    2014-01-07

    Resistive random access memory (RRAM) devices (e.g."memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re)distribution of oxygen vacancies (VOs). From noise and transport analysis we further obtained the density of states and average distance of the VOs at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher VO and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

  9. Resistive switching in polycrystalline YMnO3 thin films

    Directory of Open Access Journals (Sweden)

    A. Bogusz

    2014-10-01

    Full Text Available We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO3 film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO3. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices.

  10. Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

    KAUST Repository

    Wu, S.

    2013-12-12

    Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  11. Study of opening switch characteristics of a plasma focus

    International Nuclear Information System (INIS)

    Rhee, M.J.; Schneider, R.F.

    1985-01-01

    It is shown that a current charged transmission line and an opening switch can be used as an inductive energy storage system to produce a high power pulse. A plasma focus device, in which a transmission line is inserted in series with the capacitor bank and a coaxial gun, is considered as an inductive energy storage system. The m = 0 instability in the plasma focus is utilized as an opening switch and the disrupted plasma column is considered as bipolar diode. The system is described preferably by the transmission line theory rather than the lumped circuit theory. The relationship between the output voltage and the current drop is given by V = ΔIZ, where Z is the characteristic impedance of the transmission line. The current drop ΔI depends on the mismatched load impenance of the plasma diode which is governed by nature of the m = 0 instability. Experimental investigation of opening switch behavior of the m = 0 instability is described

  12. Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching.

    Directory of Open Access Journals (Sweden)

    Adolfo Henrique Nunes Melo

    Full Text Available Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM. In this article, we provide a new insight into the applicability of resistive memories. The characteristics of non-rewritable resistive memories (NRRM were investigated. Devices with Pt/ZnO/ITO architecture were prepared using magnetron sputtering, upon which various bipolar and unipolar resistive switching tests were performed. The results showed excellent distinction between the high resistance state (HRS and low resistance state (LRS, with RHRS/RLRS = 5.2 × 1011 for the Pt/ZnO/ITO device with deposition time of 1 h. All samples were stable for more than 104 s, indicating that the devices have excellent applicability in NRRMs.

  13. Modeling of Static Characteristics of Switched Reluctance Motor

    Directory of Open Access Journals (Sweden)

    Ali Asghar Memon

    2013-01-01

    Full Text Available To investigate the running characteristics of a switched reluctance motor, the static characteristics and related input data tables are required. The static characteristics comprise of flux linkage, co-energy and static torque characteristics. The co-energy and static torque are calculated once data of magnetization characteristics is available. The data of co-energy is required for the calculation of static torque characteristics. The simulation model includes the data of static characteristics for prediction of the instantaneous and steady state performance of the motor. In this research a computer based procedure of experiments is carried out for measurement of the magnetization characteristics. For every set of measurements, the removal of eddy current is carefully addressed. The experiments are carried out on an existing 8/6 pole rotary switched reluctance motor. Additionally, the instantaneous phase current, instantaneous torque and flux waveforms are produced by using linear, which is by default and spline data interpolation separately. The information obtained from theses simulation results will help in an improved simulation model for predicting the performance of the machine.

  14. Filament growth and resistive switching in hafnium oxide memristive devices.

    Science.gov (United States)

    Dirkmann, Sven; Kaiser, Jan; Wenger, Christian; Mussenbrock, Thomas

    2018-03-30

    We report on the resistive switching in TiN/Ti/HfO 2 /TiN memristive devices. A resistive switching model for the device is proposed, taking into account important experimental and theoretical findings. The proposed switching model is validated using 2D and 3D kinetic Monte Carlo simulation models. The models are consistently coupled to the electric field and different current transport mechanisms as direct tunneling, trap assisted tunneling (TAT), ohmic transport, and transport through a quantum point contact (QPC) have been considered. We find that the numerical results are in excellent agreement with experimentally obtained data. Important device parameters, which are difficult or impossible to measure in experiments, are calculated. This includes the shape of the conductive filament, width of filament constriction, current density, and temperature distribution. To obtain insights in the operation of the device, consecutive cycles have been simulated. Furthermore, the switching kinetic for the forming and set process for different applied voltages is investigated. Finally, the influence of an annealing process on the filament growth, especially on the filament growth direction, is discussed.

  15. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    Reliable and repeated switching of the resistance of ZnO thin films was obtained between two well defined states of high and low resistance with a narrow dispersion and small switching voltages. Resistance ratios of the high resistance state to low resistance state were found to be in the range of 2–5 orders of magnitude ...

  16. Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials

    Science.gov (United States)

    Li, Xiaoli; Jia, Juan; Li, Yanchun; Bai, Yuhao; Li, Jie; Shi, Yana; Wang, Lanfang; Xu, Xiaohong

    2016-09-01

    Combining resistive switching and magnetoresistance in a system exhibits great potential for application in multibit nonvolatile data storage. It is in significance and difficulty to seek a material with resistances that can be stably switched at different resistance states modulated by an electrical field and a magnetic field. In this paper, we propose a novel electrode/ZnO/ZnO-Co/electrode device in which the storage layer combines a nanostructured ZnO-Co layer and a ZnO layer. The device exhibits bipolar resistive switching characteristics, which can be explained by the accumulation of oxygen vacancies due to the migration of oxygen ions by external electrical stimuli and the contribution of Co particles in the ZnO-Co layer. Moreover, the magnetoresistance effect at room temperature can be observed in the device at high and low resistance states. Therefore, through electrical and magnetic control, four resistance states are achieved in this system, presenting a new possibility towards enhancing data densities by many folds.

  17. Resistive switching phenomena in TiOx nanoparticle layers for memory applications

    International Nuclear Information System (INIS)

    Goren, Emanuelle; Tsur, Yoed; Ungureanu, Mariana; Zazpe, Raul; Rozenberg, Marcelo; Hueso, Luis E.; Casanova, Fèlix; Stoliar, Pablo

    2014-01-01

    Electrical characteristics of a Co/ TiO x /Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO 2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO x nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.

  18. Resistance switching in polyvinylidene fluoride (PVDF) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pramod, K.; Sahu, Binaya Kumar; Gangineni, R. B., E-mail: rameshg.phy@pondiuni.edu.in [Department of Physics, Pondicherry University, R. V. Nagar, Kalapet, Puducherry – 605014 (India)

    2015-06-24

    Polyvinylidene fluoride (PDVF), one of the best electrically active polymer material & an interesting candidate to address the electrical control of its functional properties like ferroelectricity, piezoelectricity, pyroelectricity etc. In the current work, with the help of spin coater and DC magnetron sputtering techniques, semi-crystallized PVDF thin films prominent in alpha phase is prepared in capacitor like structure and their electrical characterization is emphasized. In current-voltage (I-V) and resistance-voltage (R-V) measurements, clear nonlinearity and resistance switching has been observed for films prepared using 7 wt% 2-butanone and 7 wt% Dimethyl Sulfoxide (DMSO) solvents.

  19. Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films

    Science.gov (United States)

    Rupp, Jonathan A. J.; Querré, Madec; Kindsmüller, Andreas; Besland, Marie-Paule; Janod, Etienne; Dittmann, Regina; Waser, Rainer; Wouters, Dirk J.

    2018-01-01

    This study investigates resistive switching in amorphous undoped and Cr-doped vanadium oxide thin films synthesized by sputtering deposition at low oxygen partial pressure. Two different volatile threshold switching characteristics can occur as well as a non-volatile bipolar switching mechanism, depending on device stack symmetry and Cr-doping. The two threshold switching types are associated with different crystalline phases in the conduction filament created during an initial forming step. The first kind of threshold switching, observed for undoped vanadium oxide films, was, by its temperature dependence, proven to be associated with a thermally triggered insulator-to-metal transition in a crystalline VO2 phase, whereas the threshold switch observed in chromium doped films is stable up to 90 °C and shows characteristics of an electronically induced Mott transition. This different behaviour for undoped versus doped films has been attributed to an increased stability of V3+ due to the Cr3+ doping (as evidenced by X-ray photoelectron spectroscopy analysis), probably favouring the creation of a crystalline Cr-doped V2O3 phase (rather than a Cr-doped VO2 phase) during the energetic forming step. The symmetric Pt/a-(VCr)Ox/Pt device showing high temperature stable threshold switching may find interesting applications as a possible new selector device for resistive switching memory (ReRAM) crossbar arrays.

  20. Investigation on Capacitor Switching Transient Limiter with a Three phase Variable Resistance

    DEFF Research Database (Denmark)

    Naderi, Seyed Behzad; Jafari, Mehdi; Zandnia, Amir

    2017-01-01

    In this paper, a capacitor switching transient limiter based on a three phase variable resistance is proposed. The proposed structure eliminates the capacitor switching transient current and over-voltage by introducing a variable resistance to the current path with its special switching pattern. ...

  1. Study of opening switch characteristics of a plasma focus

    International Nuclear Information System (INIS)

    Rhee, M.J.; Schneider, R.F.

    1985-01-01

    It is shown that a current charged transmission line and an opening switch can be used as an inductive energy storage system to produce a high power pulse. A plasma focus device, in which a transmission line is inserted in series with the capacitor bank and a coaxial gun, is considered as an inductive energy storage system. The m = 0 instability in the plasma focus is utilized as an opening switch and the disrupted plasma column is considered as bipolar diode. The system is described preferably by the transmission line theory rather than the lumped circuit theory. The relationship between the output voltage and the current drop is given by V = ΔIZ, where Z is the characteristic impedance of the transmission line. The current drop ΔI depends on the mismatched load impedance of the plasma diode which is governed by nature of the m = 0 instability

  2. Pseudo-spark switch (PSS) characteristics under different operation conditions

    Energy Technology Data Exchange (ETDEWEB)

    Hamad, B. H., E-mail: dr.bassmahussain@gmail.com; Ahmad, A. K., E-mail: ahmad.kamal@sc.nahrainuniv.edu.iq [College of Science, Al Nahrain University, Jadria, Baghdad (Iraq); Lateef, K. H., E-mail: kamalhlatif@yahoo.com [Ministry of Science and Technology, Jadria, Baghdad (Iraq)

    2016-08-15

    The present paper concentrates on the characteristics of the pseudospark switch (PSS) designed in a previous work. The special characteristics of PSS make it a replacement for other high voltage switches such as thyratrons and ordinary high-pressure spark gaps. PSS is characterized by short rise time and small jitter time. The pseudo park chamber consists of two hollow cylindrical electrodes made of a stainless steel material (type 306L) separated by an insulator. The insulator used in our design is a glazed ceramic 70 mm in diameter and 3.5 mm in thickness. A PSS with an anode voltage of 29.2 kV, and a current of 3.6 kA and 11 ns rise time was achieved and used successfully at a repetition rate of about 2.2 kHz. A simple trigger circuit designed, built, and used effectively reaching more than 1.56 kV trigger pulse which is sufficient to ignite the argon gas inside the cathode to cause a breakdown. A non-inductive dummy load is designed to be a new technique to find the accurate value of the PSS inductance. A jitter time of ±10 ns pulses is observed to occur in a reliable manner for more than 6 h of continuous operation. In this research, the important parameters of this switch like rise time, peak current, and anode voltage were studied at various values of charging capacitance. The lifetime of this system is depending on the kind of the electrode material and on the type of insulation material in the main gap of the pseudospark switch.

  3. Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

    International Nuclear Information System (INIS)

    Qiao Shi-Zhu; Kang Shi-Shou; Li Qiang; Zhong Hai; Kang Yun; Yu Shu-Yun; Han Guang-Bing; Yan Shi-Shen; Mei Liang-Mo; Qin Yu-Feng

    2014-01-01

    Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar (unipolar and bipolar) resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of Al 2 O 3 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect. (interdisciplinary physics and related areas of science and technology)

  4. Screening effects in ferroelectric resistive switching of BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    S. Farokhipoor

    2014-05-01

    Full Text Available We investigate ferroelectric resistive switching in BiFeO3 thin films by performing local conductivity measurements. By comparing conduction characteristics at artificially up-polarized domains with those at as-grown down-polarized domains, the change in resistance is attributed to the modification of the electronic barrier height at the interface with the electrodes, upon the reversal of the electrical polarization. We also study the effect of oxygen vacancies on the observed conduction and we propose the existence of a different screening mechanism for up and down polarized domains.

  5. Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.

    Science.gov (United States)

    Hu, Wei; Qin, Ni; Wu, Guangheng; Lin, Yanting; Li, Shuwei; Bao, Dinghua

    2012-09-12

    The opportunity of spinel ferrites in nonvolatile memory device applications has been demonstrated by the resistive switching performance characteristics of a Pt/NiFe(2)O(4)/Pt structure, such as low operating voltage, high device yield, long retention time (up to 10(5) s), and good endurance (up to 2.2 × 10(4) cycles). The dominant conduction mechanisms are Ohmic conduction in the low-resistance state and in the lower-voltage region of the high-resistance state and Schottky emission in the higher-voltage region of the high-resistance state. On the basis of measurements of the temperature dependence of the resistances and magnetic properties in different resistance states, we explain the physical mechanism of resistive switching of Pt/NiFe(2)O(4)/Pt devices using the model of formation and rupture of conducting filaments by considering the thermal effect of oxygen vacancies and changes in the valences of cations due to the redox effect.

  6. Controllable Organic Resistive Switching Achieved by One-Step Integration of Cone-Shaped Contact.

    Science.gov (United States)

    Ling, Haifeng; Yi, Mingdong; Nagai, Masaru; Xie, Linghai; Wang, Laiyuan; Hu, Bo; Huang, Wei

    2017-09-01

    Conductive filaments (CFs)-based resistive random access memory possesses the ability of scaling down to sub-nanoscale with high-density integration architecture, making it the most promising nanoelectronic technology for reclaiming Moore's law. Compared with the extensive study in inorganic switching medium, the scientific challenge now is to understand the growth kinetics of nanoscale CFs in organic polymers, aiming to achieve controllable switching characteristics toward flexible and reliable nonvolatile organic memory. Here, this paper systematically investigates the resistive switching (RS) behaviors based on a widely adopted vertical architecture of Al/organic/indium-tin-oxide (ITO), with poly(9-vinylcarbazole) as the case study. A nanoscale Al filament with a dynamic-gap zone (DGZ) is directly observed using in situ scanning transmission electron microscopy (STEM) , which demonstrates that the RS behaviors are related to the random formation of spliced filaments consisting of Al and oxygen vacancy dual conductive channels growing through carbazole groups. The randomicity of the filament formation can be depressed by introducing a cone-shaped contact via a one-step integration method. The conical electrode can effectively shorten the DGZ and enhance the localized electric field, thus reducing the switching voltage and improving the RS uniformity. This study provides a deeper insight of the multiple filamentary mechanisms for organic RS effect. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Coexistence of bipolar and threshold resistive switching in TiO2 based structure with embedded hafnium nanoparticles

    International Nuclear Information System (INIS)

    Michelakaki, Irini; Bousoulas, Panagiotis; Stathopoulos, Spyros; Tsoukalas, Dimitris; Boukos, Nikos

    2017-01-01

    The coexistence of nonvolatile memory switching and volatile threshold switching in a single device is of importance for suppressing the sneak-path currents in crossbar resistive memory architectures. This study demonstrates that the combination of a thin film of TiO 2 with hafnium nanoparticles in Au/Ti/TiO 2 /Hf nanoparticles/Au device configuration enables conversion between memory switching and volatile threshold switching by adjusting the current compliance through the materials stack. The presence of hexagonal closed packed Hf nanoparticles, a synthesis of which has not been reported before, is critical for the device operation that exhibits beneficial features as it is forming free and operates at low voltage and power consumption. Analysis of measured current–voltage ( I – V ) characteristics reveal a filamentary nature of switching phenomena and present operating similarities with electrochemical metallization cells suggesting that Hf metal atoms and not only oxygen vacancies are responsible for conductive filament formation. (paper)

  8. Resistive switching in ZnO/ZnO:In nanocomposite

    Science.gov (United States)

    Khakhulin, D. A.; Vakulov, Z. E.; Smirnov, V. A.; Tominov, R. V.; Yoon, Jong-Gul; Ageev, O. A.

    2017-11-01

    A lot of effort nowadays is put into development of new approaches to processing and storage of information in integrated circuits due to limitations in miniaturisation. Our research is dedicated to one of actively developed concepts – oxide based resistive memory devices. A material that draws interest due to its promising technological properties is ZnO but pure ZnO lacks in performance in comparison with some other transition metal oxides. Thus our work is focused on improvement of resistive switching parameters in ZnO films by creation of complex nanocomposites. In this work we report characterisation of a nanocomposite based on PLD grown ZnO films with inclusions of In. Such solution allows us to achieve improvements of main parameters that are critical for ReRAM device: RHRS/RLRS ratio, endurance and retention.

  9. Co nanoparticles induced resistive switching and magnetism for the electrochemically deposited polypyrrole composite films.

    Science.gov (United States)

    Xu, Zedong; Gao, Min; Yu, Lina; Lu, Liying; Xu, Xiaoguang; Jiang, Yong

    2014-10-22

    The resistive switching behavior of Co-nanoparticle-dispersed polypyrrole (PPy) composite films is studied. A novel design method for resistive random access memory (ReRAM) is proposed. The conducting polymer films with metal nanocrystal (NC)-dispersed carbon chains induce the spontaneous oxidization of the conducting polymer at the surface. The resistive switching behavior is achieved by an electric field controlling the oxygen ion mobility between the metal electrode and the conducting polymer film to realize the mutual transition between intrinsic conduction (low resistive state) and oxidized layer conduction (high resistive state). Furthermore, the formation process of intrinsic conductive paths can be effectively controlled in the conducting polymer ReRAM using metal NCs in films because the inner metal NCs induce electric field lines converging around them and the intensity of the electric field at the tip of NCs can greatly exceed that of the other region. Metal NCs can also bring new characteristics for ReRAM, such as magnetism by dispersing magnetic metal NCs in polymer, to obtain multifunctional electronic devices or meet some special purpose in future applications. Our works will enrich the application fields of the electromagnetic PPy composite films and present a novel material for ReRAM devices.

  10. Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

    Directory of Open Access Journals (Sweden)

    Atul Thakre

    2017-12-01

    Full Text Available An enhanced, repeatable and robust resistive switching phenomenon was observed in Cr substituted BaTiO3 polar ferroelectric thin films; fabricated and deposited by the sol-gel approach and spin coating technique, respectively. An enhanced bistable bipolar resistive switching (BRS phenomenon without electro-forming process, low switching voltage (∼ 2 V and moderate retention characteristics of 104 s along with a high Roff/Ron resistance ratio ∼103 was achieved. The current conduction analysis showed that the space charge limited conduction (SCLC and Schottky emission conduction dominate in the high voltage range, while thermally active charge carriers (ohmic in the lower voltage range. The impedance spectroscopy study indicates the formation of current conducting path and rupturing of oxygen vacancies during SET and RESET process.

  11. Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

    Science.gov (United States)

    Thakre, Atul; Kumar, Ashok

    2017-12-01

    An enhanced, repeatable and robust resistive switching phenomenon was observed in Cr substituted BaTiO3 polar ferroelectric thin films; fabricated and deposited by the sol-gel approach and spin coating technique, respectively. An enhanced bistable bipolar resistive switching (BRS) phenomenon without electro-forming process, low switching voltage (˜ 2 V) and moderate retention characteristics of 104 s along with a high Roff/Ron resistance ratio ˜103 was achieved. The current conduction analysis showed that the space charge limited conduction (SCLC) and Schottky emission conduction dominate in the high voltage range, while thermally active charge carriers (ohmic) in the lower voltage range. The impedance spectroscopy study indicates the formation of current conducting path and rupturing of oxygen vacancies during SET and RESET process.

  12. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications

    Science.gov (United States)

    Wang, Yan; Liu, Qi; Long, Shibing; Wang, Wei; Wang, Qin; Zhang, Manhong; Zhang, Sen; Li, Yingtao; Zuo, Qingyun; Yang, Jianhong; Liu, Ming

    2010-01-01

    In this paper, the resistive switching characteristics in a Cu/HfO2:Cu/Pt sandwiched structure is investigated for multilevel non-volatile memory applications. The device shows excellent resistive switching performance, including good endurance, long retention time, fast operation speed and a large storage window (ROFF/RON>107). Based on the temperature-dependent test results, the formation of Cu conducting filaments is believed to be the reason for the resistance switching from the OFF state to the ON state. By integrating the resistive switching mechanism study and the device fabrication, different resistance values are achieved using different compliance currents in the program process. These resistance values can be easily distinguished in a large temperature range, and can be maintained over 10 years by extrapolating retention data at room temperature. The integrated experiment and mechanism studies set up the foundation for the development of high-performance multilevel RRAM.

  13. Effect of resistance feedback on spin torque-induced switching of nanomagnets

    International Nuclear Information System (INIS)

    Garzon, Samir; Webb, Richard A.; Covington, Mark; Kaka, Shehzaad; Crawford, Thomas M.

    2009-01-01

    In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.

  14. Resistance switching in epitaxial SrCoO{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk, E-mail: cu-jung@hufs.ac.kr [Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791 (Korea, Republic of); Kim, Yeon Soo; Park, Bae Ho [Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-791 (Korea, Republic of); Jeong, Huiseong; Park, Ji-Yong [Department of Physics and Division of Energy System Research, Ajou University, Suwon 443-749 (Korea, Republic of); Cho, Myung Rae; Park, Yun Daniel [Department of Physics and Astronomy and Center for Subwavelength Optics, Seoul National University, Seoul 151-747 (Korea, Republic of); Choi, Woo Seok [Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Dong-Wook [Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of); Jin, Hyunwoo; Lee, Suyoun [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong [Department of Material Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2014-08-11

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3−δ}) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

  15. Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches

    International Nuclear Information System (INIS)

    Van den Hurk, Jan; Linn, Eike; Waser, Rainer; Zhang, Hehe; Valov, Ilia

    2014-01-01

    Redox-based resistive memory cells exhibit changes of OFF or intermediate resistance values over time and even ON states can be completely lost in certain cases. The stability of these resistance states and the time until resistance loss strongly depends on the materials system. On the basis of electrical measurements and chemical analysis we found a viable explanation for these volatile resistance states (VRSs) in Ag-GeS x -based electrochemical metallization memory cells and identified a technological application in the field of crossbar memories. Complementary resistive switches usually suffer from the necessity of a destructive read-out procedure increasing wear and reducing read-out speed. From our analysis we deduced a solution to use the VRS as an inherent selector mechanism without the need for additional selector devices. (paper)

  16. Multistate Resistive Switching Memory for Synaptic Memory Applications

    KAUST Repository

    Hota, Mrinal Kanti

    2016-07-12

    Reproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory operation is achieved by controlling current compliance and RESET stop voltages. A high DC cyclic stability up to 400 cycles in the multistate memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies and modulation of the interfacial layers. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  17. Controllable resistive switching in Au/Nb:SrTiO3 microscopic Schottky junctions

    Science.gov (United States)

    Wang, Yuhang; Shi, Xiaolan; Zhao, Kehan; Xie, Guanlin; Huang, Siyu; Zhang, Liuwan

    2016-02-01

    The reversible resistive switching effect at oxide interface shows promising applications in information storage and artificial intelligence. However, the microscopic switching mechanism is still elusive due to the difficulty of direct observation of the electrical and chemical behavior at the buried interface, which becomes a major barrier to design reliable, scalable, and reproducible devices. Here we used a gold-coated AFM tip as a removable electrode to investigate the resistive switching effect in a microscopic Au/Nb:SrTiO3 Schottky junction. We found that unlike the inhomogeneous random resistive switching in the macroscopic Schottky junctions, the high and low resistance states can be reversibly switched in a controllable way on the Nb-doped SrTiO3 surface by the conductive tip. The switching between the high and low resistance states in vacuum is accompanied by the reversible shift of the surface Fermi level. We indicate that the transfer of the interface oxygen ion in a double-well potential is responsible for the resistive switching in both macroscopic and microscopic Schottky junctions. Our findings provide a guide to optimize the key performance parameters of a resistive switching device such as operation voltage, switching speed, on/off ratio, and state retention time by proper electrode selection and fabrication strategy.

  18. Purely electronic switching with high uniformity, resistance tunability, and good retention in Pt-dispersed SiO2 thin films for ReRAM.

    Science.gov (United States)

    Choi, Byung Joon; Chen, Albert B K; Yang, Xiang; Chen, I-Wei

    2011-09-01

    Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

    International Nuclear Information System (INIS)

    ISLAM, N.E.; SCHAMILOGLU, E.; MAR, ALAN; LOUBRIEL, GUILLERMO M.; ZUTAVERN, FRED J.; JOSHI, R.P.

    2000-01-01

    The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 10 4 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10 8 shots for electro-optic drivers. Much effort is currently being channeled in the

  20. Printing an ITO-free flexible poly (4-vinylphenol) resistive switching device

    Science.gov (United States)

    Ali, Junaid; Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Aziz, Shahid; Choi, Kyung Hyun

    2018-02-01

    Resistive switching in a sandwich structure of silver (Ag)/Polyvinyl phenol (PVP)/carbon nanotube (CNTs)-silver nanowires (AgNWs) coated on a flexible PET substrate is reported in this work. Densely populated networks of one dimensional nano materials (1DNM), CNTs-AgNWs have been used as the conductive bottom electrode with the prominent features of high flexibility and low sheet resistance of 90 Ω/sq. Thin, yet uniform active layer of PVP was deposited on top of the spin coated 1DNM thin film through state of the art printing technique of electrohydrodynamic atomization (EHDA) with an average thickness of 170 ± 28 nm. Ag dots with an active area of ∼0.1 mm2 were deposited through roll to plate printing system as the top electrodes to complete the device fabrication of flexible memory device. Our memory device exhibited suitable electrical characteristics with OFF/ON ratio of 100:1, retention time of 60 min and electrical endurance for 100 voltage sweeps without any noticeable decay in performance. The resistive switching characteristics at a low current compliance of 3 nA were also evaluated for the application of low power consumption. This memory device is flexible and can sustain more than 100 bending cycles at a bending diameter of 2 cm with stable HRS and LRS values. Our proposed device shows promise to be used as a future potential nonvolatile memory device in flexible electronics.

  1. Bipolar resistive switching behaviours in ZnMn2O4 film deposited on ...

    Indian Academy of Sciences (India)

    Ohm's law, trap-filled-limited and Child's law conduction procedure at room temperature. Keywords. ZnMn2O4; bipolar; resistive switching; chemical solution deposition. 1. Introduction. Non-volatile memories (NVMs) based on resistive switch- ing between two-terminal electrodes induced by an exter- nal electric field were ...

  2. A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device

    Science.gov (United States)

    Guo, Tao; Sun, Bai; Mao, Shuangsuo; Zhu, Shouhui; Xia, Yudong; Wang, Hongyan; Zhao, Yong; Yu, Zhou

    2018-03-01

    In this work, the Cu(In1-xGax)Se2 (CIGS), Al doped ZnO (AZO) and Mo has been used for constructing a resistive switching device with AZO/CIGS/Mo sandwich structure grown on a transparent glass substrate. The device represents a high-performance memory characteristics under ambient temperature. In particularly, a resistance ratio change phenomenon have been observed in our device for the first time.

  3. Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

    Science.gov (United States)

    Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

    2018-04-01

    Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

  4. Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure

    International Nuclear Information System (INIS)

    Li, Yingtao; Yuan, Peng; Li, Rongrong; Tao, Chunlan; Fu, Liping; Gao, Xiaoping

    2015-01-01

    Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO 2 /TiO 2 /Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (<10 μA), the Cu/ZrO 2 /TiO 2 /Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 10 6 . The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μA. Furthermore, by using different reset voltages, the Cu/ZrO 2 /TiO 2 /Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO 2 /TiO 2 /Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors. (fast track communication)

  5. Three-terminal resistive switching memory in a transparent vertical-configuration device

    International Nuclear Information System (INIS)

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-01

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies

  6. Switching characteristics of microplasmas in a planar electrode gap

    International Nuclear Information System (INIS)

    Rahaman, Hasibur; Lee, Byung-Joon; Petzenhauser, Isfried; Frank, Klaus; Urban, Juergen; Stark, Robert

    2007-01-01

    Microplasmas at high pressure have been the authors' special interest for its practical relevance to the development of a switch. They concentrated on repetitive switching with a possibility to exceed the up to now known values for plasma closing switches and simultaneously maintaining a subnanosecond rise time of the switched pulses at a load. They examined several parameters for this purpose such as the electrode gap spacing, the electrode geometry, the gas type, the gas pressure, and including the applied voltage and current rating to operate these plasmas

  7. Multilevel resistive switching in TiO2/Al2O3 bilayers at low temperature

    Science.gov (United States)

    Andreeva, N.; Ivanov, A.; Petrov, A.

    2018-02-01

    We report an approach to design a metal-insulator-metal (MIM) structure exhibiting multilevel resistive switching. Toward this end, two oxide layers (TiO2 and Al2O3) were combined to form a bilayer structure. MIM structures demonstrate stable bipolar switching relative to the resistive state determined by the bias voltage. The resistive state of such bilayer structures can be electrically tuned over seven orders of magnitude. The resistance is determined by the concentration of oxygen vacancies in the active layer of Al2O3. To elucidate a possible mechanism for resistive switching, structural studies and measurements have been made in the temperature range 50-295 K. Resistive switching occurs over the entire temperature range, which assumes the electronic character of the process in the Al2O3 layer. The experimental results indicate that hopping transport with variable-length jumps is the most probable transport mechanism in these MIM structures.

  8. Evidence of thermal heating in the low temperature resistive switching of V2O3 microbridges

    Science.gov (United States)

    Menghini, Mariela; Dillemans, Leander; Levrie, Karen; Homm, Pia; Su, Chen-Yi; Lieten, Ruben; Smets, Tomas; Locquet, Jean-Pierre

    2014-03-01

    Vanadium sesquioxide (V2O3) is a strongly correlated material that exhibits a metal-insulator-transition (MIT) at low temperatures. The electrical triggering of this transition could result in an exciting new category of applications, such as resistive switching-based memories and field-effect transistors. We have fabricated V2O3 microbridges by combining MBE growth with UV lithography and etching.The MIT is studied in microbridges with different length/width aspect ratios. We found that the size of the MIT is largest for the widest and shortest microbridges. We discuss the influence of device processing in the observed behavior. We have also measured voltage-current characteristics (VIs) of the microbridges at different temperatures across the MIT. At intermediate temperatures we observe a sudden change to a more resistive state while the current is swept continuously. The only way to switch back to an insulating state is by thermal cycling. At sufficiently low and high temperatures the VIs are smooth. We have estimated the power transferred to the device by the applied current in order to understand this behavior in terms of local Joule heating. The distribution of size of the resistance jumps and the values of voltage and current at which these jumps occur are studied as a function of width and length of the microbridge.

  9. Conduction, reverse conduction and switching characteristics of GaN E-HEMT

    DEFF Research Database (Denmark)

    Sørensen, Charlie; Lindblad Fogsgaard, Martin; Christiansen, Michael Noe

    2015-01-01

    In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using...

  10. Robust switching characteristics of CdSe/ZnS quantum dot non-volatile memory devices.

    Science.gov (United States)

    Kannan, V; Rhee, J K

    2013-08-14

    In this paper we report Al/CdSe-ZnS core-shell quantum dot/AlOx/CdSe-ZnS core-shell quantum dot/ITO based non-volatile resistive memory devices with an ON/OFF ratio of ~1000. The facile solution processed device exhibited excellent endurance characteristics for 200,000 switching cycles. Retention tests showed good stability for over 20,000 s and the devices are reproducible. A memory operating mechanism is proposed based on charge trapping-detrapping in core-shell quantum dots with AlOx acting as a barrier leading to Coulomb blockade. I-V characteristics of a three terminal device fabricated with the additional terminal wired-out from the middle AlOx layer supports the proposed charge trapping mechanism.

  11. Bipolar resistive switching behaviours in ZnMn2O4 film deposited on ...

    Indian Academy of Sciences (India)

    The bipolar resistive switching behaviours of the Ag/ZnMn2O4/p+-Si capacitor are investigated. The bipolar resistive switching is reproducible and shows high ON/OFF ratio of > 102 and long retention times of > 105 s. The conduction mechanism of the Ag/ZnMn2O4/p+-Si capacitor in the low-resistance state (LRS) is ohmic ...

  12. Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, E., E-mail: enrique.miranda@uab.cat; Suñé, J. [Departament d' Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Cerdanyola del Vallés, Barcelona (Spain); Mehonic, A.; Kenyon, A. J. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom)

    2013-11-25

    A simple analytic model for the electron transport through filamentary-type structures in Si-rich silica (SiO{sub x})-based resistive switches is proposed. The model is based on a mesoscopic description and is able to account for the linear and nonlinear components of conductance that arise from both fully and partially formed conductive channels spanning the dielectric film. Channels are represented by arrays of identical scatterers whose number and quantum transmission properties determine the current magnitude in the low and high resistance states. We show that the proposed model not only reproduces the experimental current-voltage (I-V) characteristics but also the normalized differential conductance (dln(I)/dln(V)-V) curves of devices under test.

  13. Engineering Silver Nanowire Networks: From Transparent Electrodes to Resistive Switching Devices.

    Science.gov (United States)

    Du, Haiwei; Wan, Tao; Qu, Bo; Cao, Fuyang; Lin, Qianru; Chen, Nan; Lin, Xi; Chu, Dewei

    2017-06-21

    Metal nanowires (NWs) networks with high conductance have shown potential applications in modern electronic components, especially the transparent electrodes over the past decade. In metal NW networks, the electrical connectivity of nanoscale NW junction can be modulated for various applications. In this work, silver nanowire (Ag NW) networks were selected to achieve the desired functions. The Ag NWs were first synthesized by a classic polyol process, and spin-coated on glass to fabricate transparent electrodes. The as-fabricated electrode showed a sheet resistance of 7.158 Ω □ -1 with an optical transmittance of 79.19% at 550 nm, indicating a comparable figure of merit (FOM, or Φ TC ) (13.55 × 10 -3 Ω -1 ). Then, two different post-treatments were designed to tune the Ag NWs for not only transparent electrode but also for threshold resistive switching (RS) application. On the one hand, the Ag NW film was mechanically pressed to significantly improve the conductance by reducing the junction resistance. On the other hand, an Ag@AgO x core-shell structure was deliberately designed by partial oxidation of Ag NWs through simple ultraviolet (UV)-ozone treatment. The Ag core can act as metallic interconnect and the insulating AgO x shell acts as a switching medium to provide a conductive pathway for Ag filament migration. By fabricating Ag/Ag@AgO x /Ag planar structure, a volatile threshold switching characteristic was observed and an on/off ratio of ∼100 was achieved. This work showed that through different post-treatments, Ag NW network can be engineered for diverse functions, transforming from transparent electrodes to RS devices.

  14. Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

    KAUST Repository

    Hota, M. K.

    2014-04-14

    We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.

  15. Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide

    Directory of Open Access Journals (Sweden)

    Bin Gao

    2015-02-01

    Full Text Available Metal-oxide based electronics synapse is promising for future neuromorphic computation application due to its simple structure and fab-friendly materials. HfOx resistive switching memory has been demonstrated superior performance such as high speed, low voltage, robust reliability, excellent repeatability, and so on. In this work, the HfOx synaptic device was investigated based on its resistive switching phenomenon. HfOx resistive switching device with different electrodes and dopants were fabricated. TiN/Gd:HfOx/Pt stack exhibited the best synaptic performance, including controllable multilevel ability and low training energy consumption. The training schemes for memory and forgetting were developed.

  16. Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

    Energy Technology Data Exchange (ETDEWEB)

    Ielmini, D; Nardi, F; Cagli, C, E-mail: ielmini@elet.polimi.it [Dipartimento di Elettronica e Informazione-Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, I-20133 Milano (Italy)

    2011-06-24

    NiO films display unipolar resistance switching characteristics, due to the electrically induced formation and rupture of nanofilaments. While the applicative interest for possible use in highly dense resistance switching memory (RRAM) is extremely high, switching phenomena pose strong fundamental challenges in understanding the physical mechanisms and models. This work addresses the set and reset mechanisms for the formation and rupture of nanofilaments in NiO RRAM devices. Reset is described in terms of thermally-accelerated diffusion and oxidation processes, and its resistance dependence is explained by size-dependent Joule heating and oxidation. The filament is described as a region with locally-enhanced doping, resulting in an insulator-metal transition driven by structural and chemical defects. The set mechanism is explained by a threshold switching effect, triggering chemical reduction and a consequent local increase of metallic doping. The possible use of the observed resistance-dependent reset and set parameters to improve the memory array operation and variability is finally discussed.

  17. Effect of input spectrum on the spectral switch characteristics in a white-light Michelson interferometer.

    Science.gov (United States)

    Brundavanam, Maruthi M; Viswanathan, Nirmal K; Rao, D Narayana

    2009-12-01

    We report here a detailed experimental study to demonstrate the effect of source spectral characteristics such as spectral bandwidth (Deltalambda), peak wavelength (lambda(0)), and shape of the spectrum on the spectral shifts and spectral switches measured due to temporal correlation in a white-light Michelson interferometer operated in the spectral domain. Behavior of the spectral switch characteristics such as the switch position, switch amplitude, and switch symmetry are discussed in detail as a function of optical path difference between the interfering beams. The experimental results are compared with numerical calculations carried out using interference law in the spectral domain with modified source spectral characteristics. On the basis of our results we feel that our study is of critical importance in the selection of source spectral characteristics to further improve the longitudinal resolution or the measurement sensitivity in spectral-domain optical coherence tomography and microscopy.

  18. Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

    Science.gov (United States)

    Wu, Zijin; Wang, Tongtong; Sun, Changqi; Liu, Peitao; Xia, Baorui; Zhang, Jingyan; Liu, Yonggang; Gao, Daqiang

    2017-12-01

    Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nanocomposite films can be used as the active layer of resistive switching memory devices, and will make the devices have better performance.

  19. Investigation of resistive switching in barium strontium titanate thin films for memory applications

    International Nuclear Information System (INIS)

    Shen, Wan

    2010-01-01

    Resistive random access memory (RRAM) has attracted much attention due to its low power consumption, high speed operation, non-readout disturbance and high density integration potential and is regarded as one of the most promising candidates for the next generation non-volatile memory. The resistive switching behavior of Mn-doped BaSrTiO 3 (BST) thin films with different crystalline properties was investigated within this dissertation. The laser fluence dependence was checked in order to optimize the RRAM properties. Although the film epitaxial quality was improved by reducing the laser energy during deposition process, the yields fluctuated and only 3% RRAM devices with highest epitaxial quality of BST film shows resistive switching behavior instead of 67% for the samples with worse film quality. It gives a clue that the best thin film quality does not result in the best switching performance, and it is a clear evidence of the importance of the defects to obtain resistive switching phenomena. The bipolar resistive switching behavior was studied with epitaxial BST thin films on SRO/STO. Compared to Pt top electrode, the yield, endurance and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop of the resistance for both high and low resistance states, the devices with W top electrode can be switched for 10 4 times without any obvious degradation. The resistance degradation for devices with Pt top electrode may result from the diffusion of oxygen along the Pt grain boundaries during cycling whereas for W top electrode the reversible oxidation and reduction of a WO x layer, present at the interface between W top electrode and BST film, attributes to the improved switching property. The transition from bipolar to unipolar resistive switching in polycrystalline BST thin films was observed. A forming process which induces a metallic low resistance state is prerequisite for the observation of

  20. Investigation of resistive switching in barium strontium titanate thin films for memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Wan

    2010-11-17

    Resistive random access memory (RRAM) has attracted much attention due to its low power consumption, high speed operation, non-readout disturbance and high density integration potential and is regarded as one of the most promising candidates for the next generation non-volatile memory. The resistive switching behavior of Mn-doped BaSrTiO{sub 3} (BST) thin films with different crystalline properties was investigated within this dissertation. The laser fluence dependence was checked in order to optimize the RRAM properties. Although the film epitaxial quality was improved by reducing the laser energy during deposition process, the yields fluctuated and only 3% RRAM devices with highest epitaxial quality of BST film shows resistive switching behavior instead of 67% for the samples with worse film quality. It gives a clue that the best thin film quality does not result in the best switching performance, and it is a clear evidence of the importance of the defects to obtain resistive switching phenomena. The bipolar resistive switching behavior was studied with epitaxial BST thin films on SRO/STO. Compared to Pt top electrode, the yield, endurance and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop of the resistance for both high and low resistance states, the devices with W top electrode can be switched for 10{sup 4} times without any obvious degradation. The resistance degradation for devices with Pt top electrode may result from the diffusion of oxygen along the Pt grain boundaries during cycling whereas for W top electrode the reversible oxidation and reduction of a WO{sub x} layer, present at the interface between W top electrode and BST film, attributes to the improved switching property. The transition from bipolar to unipolar resistive switching in polycrystalline BST thin films was observed. A forming process which induces a metallic low resistance state is prerequisite for the

  1. Efficiency Characteristics of Low Power Hybrid Switched Reluctance Motor

    DEFF Research Database (Denmark)

    Jakobsen, Uffe; Ahn, Jin-Woo

    2009-01-01

    Switched reluctance motors (SRM) are usually considered inferior in terms of efficiency as compared to permanent magnet synchronous motors (PMSM) and brushless DC-motors (BLDC), but less costly. This article presents a test of a 70W hybrid switched reluctance motor (HSRM), that archieves a peak...... efficiency for the motor drive of more than 74%, and an efficiency for the motor of almost 80%....

  2. The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films

    Science.gov (United States)

    Rowtu, Srinu; Sangani, L. D. Varma; Krishna, M. Ghanashyam

    2018-02-01

    Resistive switching behavior by engineering the electrode work function and band gap of ZnTe thin films is demonstrated. The device structures Au/ZnTe/Au, Au/ZnTe/Ag, Al/ZnTe/Ag and Pt/ZnTe/Ag were fabricated. ZnTe was deposited by thermal evaporation and the stoichiometry and band gap were controlled by varying the source-substrate distance. Band gap could be varied between 1.0 eV to approximately 4.0 eV with the larger band gap being attributed to the partial oxidation of ZnTe. The transport characteristics reveal that the low-resistance state is ohmic in nature which makes a transition to Poole-Frenkel defect-mediated conductivity in the high-resistance states. The highest R off-to- R on ratio achieved is 109. Interestingly, depending on stoichiometry, both unipolar and bipolar switching can be realized.

  3. Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

    Science.gov (United States)

    Chen, Ying-Chen; Lin, Chih-Yang; Huang, Hui-Chun; Kim, Sungjun; Fowler, Burt; Chang, Yao-Feng; Wu, Xiaohan; Xu, Gaobo; Chang, Ting-Chang; Lee, Jack C.

    2018-02-01

    Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfO x /SiO x -based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfO x /SiO x structure. The stacking HfO x /SiO x -based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ~1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

  4. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    Administrator

    the material during switching between the low and high resistance states (Choi et al 2005). The advantages of. RRAM systems over the other competing modes are the lower operating voltages and power consumption, faster switching rate, smaller and simpler bit cell structure and higher packing density (Chang et al 2008).

  5. Rectifying resistance switching behavior of Ag/SBTO/STMO/p+-Si ...

    Indian Academy of Sciences (India)

    21

    As a result, it exhibits a counter-clockwise polarity. The switching mechanisms originating from oxygen vacancy was also observed in the Al/ n-ZnO/p-NiO/ITO memory devices [18]. Figure 5 demonstrates the resistance evolution of the HRS and the LRS of Ag/SBTO/STMO/p+-Si device within 103 successive switching cycles.

  6. Phenotypic switching of Candida guilliermondii is associated with pseudohyphae formation and antifungal resistance.

    Science.gov (United States)

    Lastauskienė, Eglė; Čeputytė, Jolita; Girkontaitė, Irutė; Zinkevičienė, Auksė

    2015-04-01

    Switching between two cell types in fungi is called phenotypic switching, and it is commonly observed in pathogenic yeast. Candida lusitaniae undergoes antifungal resistance-associated phenotypic switching and results in three colony colors: light brown, brown and dark brown. In this study, we included C. lusitaniae as control. This study had two objectives. First, we wanted to evaluate whether also a prevalent human pathogen C. guilliermondii can undergo phenotypic switching. Second, our aim was to determine whether switching can change yeasts susceptibility to antifungals. Yeast suspension (1 × 10(3)-5 × 10(3) c.f.u./ml) was plated on the YPD medium containing 1 mM CuSO4. Colonies exhibiting the original and variant phenotypes were counted and converted to percentage of the population. Minimum inhibitory concentrations of amphotericin B, formic acid and acetic acid for the cells from random colonies of the different phenotypes were determined by microdilution method. After 5 days of incubation, C. guilliermondii switched spontaneously and reversibly among two phenotypes distinguishable on CuSO4 containing agar, white and dark brown. Phenotypes occurred with greater frequency (10(-1)-10(-2)) than spontaneous mutations and were reversible, fulfilling the two phenotypic switching criteria. The study showed that phenotypic switching was associated with filamentation and affected antifungal resistance. Resistance to amphotericin B increased tenfold and was associated with C. lusitaniae dark brown phenotype. C. guilliermondii colonies with brown phenotype displayed 20 and 2 times higher resistance to amphotericin B and acetic acid, respectively.

  7. Effect of gamma irradiation on resistive switching of Al/TiO2/n+Si ReRAM

    Science.gov (United States)

    Agashe, Kirti; Sarwade, Nisha; Joshi, Sangeeta; Thakurdesai, Madhavi; Surwase, Smita; Tirmali, Pravin; Asokan, Kandasami

    2017-07-01

    The Total Ionizing Dose (TID) effects of 60Co gamma ray radiation on the structural and resistive switching behavior of Resistive Random Access Memory (ReRAM), with the device structure of Al/TiO2/n+Si are experimentally investigated. The TiO2 thin films were deposited with Plasma Enhanced Atomic Layer Deposition (PEALD) technique. These devices were gamma irradiated with the dose of 5 kGy to 25 kGy in equal steps of 5 kGy/hr and investigated. The structural changes and surface morphology of these devices were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM). XRD studies revealed that gamma irradiation induces crystalline nature in TiO2 thin films with mixed anatase and rutile phases of TiO2. From FESEM cross sectional results, a deformation in TiO2 film was observed after exposure to 25 kGy. The I-V characteristics of ReRAM devices exhibited a typical bipolar resistive switching in as deposited as well as gamma irradiated devices exposed to dose up to 20 kGy. The devices exposed to 25 kGy dose do not exhibit the resistance switching characteristics. A significant modification between resistive switching behavior of the devices, structural changes in the material, surface morphology and weight % of anatase and rutile phases were observed. This study focuses on the characteristics of TiO2 based ReRAM under radiation environment of 60Co gamma rays of doses in the range of 5 kGy to 25 kGy.

  8. Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

    Science.gov (United States)

    Ko, Eunah; Shin, Jaemin; Shin, Changhwan

    2018-01-01

    Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance FET), in which a threshold selector is added to an electrode (e.g., source or drain) of conventional field effect transistor. Although the concept of the aforementioned two devices was presented more or less recently, numerous studies have been published. In this review paper, by reviewing the published studies over the last decade, we shall de-brief and discuss the history and the future perspectives of NCFET/phase FET, respectively. The background, experimental investigation, and future direction for developing the aforementioned two representative steep switching devices (i.e., NCFET and phase FET/negative resistance FET) are to be discussed in detail.

  9. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    Six decades of research on ZnO has recently sprouted a new branch in the domain of resistive random access memories. Highly resistive and c-axis oriented ZnO thin films were grown by us using d.c. discharge assisted pulsed laser deposition on Pt/Ti/SiO2/Si substrates at room temperature. The resistive switching ...

  10. Resistive switching in mixed conductors : Ag2S as a model system

    NARCIS (Netherlands)

    Morales Masis, Monica

    2012-01-01

    Resistive switching memories have gained an increased interest due to the possibilities for downscaling of memory devices down to a few nanometers. These memories consist of a resistive material sandwiched between two metal electrodes, and applying a voltage between them induces resistance

  11. Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States.

    Science.gov (United States)

    Zhao, Diyang; Qiao, Shuang; Luo, Yuxiang; Chen, Aitian; Zhang, Pengfei; Zheng, Ping; Sun, Zhong; Guo, Minghua; Chiang, Fu-Kuo; Wu, Jian; Luo, Jianlin; Li, Jianqi; Kokado, Satoshi; Wang, Yayu; Zhao, Yonggang

    2017-03-29

    The resistive switching (RS) effect in various materials has attracted much attention due to its interesting physics and potential for applications. NiO is an important system and its RS effect has been generally explained by the formation/rupture of Ni-related conducting filaments. These filaments are unique since they are formed by an electroforming process, so it is interesting to explore their magnetoresistance (MR) behavior, which can also shed light on unsolved issues such as the nature of the filaments and their evolution in the RS process, and this behavior is also important for multifunctional devices. Here, we focus on MR behavior in NiO RS films with different resistance states. Rich and interesting MR behaviors have been observed, including the normal and anomalous anisotropic magnetoresistance and tunneling magnetoresistance, which provide new insights into the nature of the filaments and their evolution in the RS process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for exploration of the conducting filaments in resistive switching materials and is significant for understanding the mechanism of RS effect and multifunctional devices.

  12. Coexistence of unipolar and bipolar resistive switching behaviors in NiFe2O4 thin film devices by doping Ag nanoparticles

    Science.gov (United States)

    Hao, Aize; Ismail, Muhammad; He, Shuai; Huang, Wenhua; Qin, Ni; Bao, Dinghua

    2018-02-01

    The coexistence of unipolar and bipolar resistive switching (RS) behaviors of Ag-nanoparticles (Ag-NPs) doped NiFe2O4 (NFO) based memory devices was investigated. The switching voltages of required operations in the unipolar mode were smaller than those in the bipolar mode, while ON/OFF resistance levels of both modes were identical. Ag-NPs doped NFO based devices could switch between the unipolar and bipolar modes just by preferring the polarity of RESET voltage. Besides, the necessity of identical compliance current during the SET process of unipolar and bipolar modes provided an additional advantage of simplicity in device operation. Performance characteristics and cycle-to-cycle uniformity (>103 cycles) in unipolar operation were considerably better than those in bipolar mode (>102 cycles) at 25 °C. Moreover, good endurance (>600 cycles) at 200 °C was observed in unipolar mode and excellent nondestructive retention characteristics were obtained on memory cells at 125 °C and 200 °C. On the basis of temperature dependence of resistance at low resistance state, it was believed that physical origin of the RS mechanism involved the formation/rupture of the conducting paths consisting of oxygen vacancies and Ag atoms, considering Joule heating and electrochemical redox reaction effects for the unipolar and bipolar resistive switching behaviors. Our results demonstrate that 0.5% Ag-NPs doped nickel ferrites are promising resistive switching materials for resistive access memory applications.

  13. Resistive switching properties and physical mechanism of europium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Wei; Zou, Changwei [School of Physical Science and Technology, Lingnan Normal University, Zhanjiang (China); Bao, Dinghua [State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou (China)

    2017-09-15

    A forming-free resistive switching effect was obtained in Pt/Eu{sub 2}O{sub 3}/Pt devices in which the Eu{sub 2}O{sub 3} thin films were fabricated by a chemical solution deposition method. The devices show unipolar resistive switching with excellent switching parameters, such as high resistance ratio (10{sup 7}), stable resistance values (read at 0.2 V), low reset voltage, good endurance, and long retention time (up to 10{sup 4} s). On the basis of the analysis of the current-voltage (I-V) curves and the resistance-temperature dependence, it can be concluded that the dominant conducting mechanisms were ohmic behavior and Schottky emission at low resistance state and high resistance state, respectively. The resistive switching behavior could be explained by the formation and rupture of conductive filament, which is related to the abundant oxygen vacancies generated in the deposition process. This work demonstrates the great potential opportunities of Eu{sub 2}O{sub 3} thin film in resistive switching memory applications, which might possess distinguished properties. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

    KAUST Repository

    Wu, Xing

    2018-04-14

    Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n++ Si as the bottom electrode with Ni‐electrode/HfOx/SiO2 asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfOx/SiO2 junction and n++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories.

  15. Switched-Capacitor Filter Optimization with Respect to Switch On-State Resistance and Features of Real Operational Amplifiers

    Directory of Open Access Journals (Sweden)

    J. Hospodka

    2007-06-01

    Full Text Available The optimization of a switched-capacitor filter, which implements a biquadratic section, is described in this paper. The aim of the optimization is to obtain a required magnitude frequency response of the filter. The optimization takes into account both one of the features of real switches - their on-state resistance, and the features of real operational amplifiers - finite voltage gain and finite unity-gain bandwidth. An optimal dynamic range is to be achieved as well. The differential evolution - a kind of evolutionary algorithms - is employed for the optimization. The filter is designed by the usual way with ideal switches and ideal operational amplifiers at first. The analysis of this filter with real switches and real operational amplifiers proves that there is a significant difference between its magnitude frequency response and the one with ideal components. Hence, the optimization is applied for finding component values so that the magnitude frequency response is as similar to the one with ideal components as possible. As for other main real features of operational amplifiers - input and output resistance - it is shown that their effect is small.

  16. Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture.

    Science.gov (United States)

    Maikap, Siddheswar; Panja, Rajeswar; Jana, Debanjan

    2014-01-01

    A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique in future three-dimensional (3D) architecture. The Cu pillar formation under external bias in an Al/Cu/Al2O3/TiN structure is simple and low cost. The Cu pillar is formed in the Al2O3 film under a small operation voltage of 70 mA is obtained. More than 100 devices have shown tight distribution of the Cu pillars in Al2O3 film for high current compliance (CC) of 70 mA. Robust read pulse endurances of >10(6) cycles are observed with read voltages of -1, 1, and 4 V. However, read endurance is failed with read voltages of -1.5, -2, and -4 V. By decreasing negative read voltage, the read endurance is getting worst, which is owing to ruptured Cu pillar. Surface roughness and TiO x N y on TiN bottom electrode are observed by atomic force microscope and transmission electron microscope, respectively. The Al/Cu/Al2O3/TiN memory device shows good bipolar resistive switching behavior at a CC of 500 μA under small operating voltage of ±1 V and good data retention characteristics of >10(3) s with acceptable resistance ratio of >10 is also obtained. This suggests that high-current operation will help to form Cu pillar and lower-current operation will have bipolar resistive switching memory. Therefore, this new Cu/Al2O3/TiN structure will be benefited for 3D architecture in the future.

  17. Micro-spectroscopic investigation of valence change processes in resistive switching SrTiO3 thin films

    International Nuclear Information System (INIS)

    Koehl, Annemarie

    2014-01-01

    Due to physical limitations of the currently used flash memory in terms of writing speed and scalability, new concepts for data storage attract great interest. A possible alternative with promising characteristics are so-called ''Resistive Random Access Memories'' (ReRAM). These memory devices are based on the resistive switching effect where the electrical resistance of a metal-insulator-metal (MIM) structure can be switched reversibly by a current or voltage pulse. Although this effect attracted wide scientific as well as commercial interest, up to now the it is not fully understood on a microscopic scale. Consequently, in this work the chemical and physical modifications caused by the resistive switching process are studied by spectroscopic techniques. As most switching models predict a strongly localized rather than a homogeneous effect, advanced micro-spectroscopy techniques are employed where additionally the lateral structure of the sample is imaged. In this work Fe-doped SrTiO 3 films are used as model material due to the thorough understanding of their defect chemistry. The epitaxial thin films are prepared by pulsed laser deposition. In a first approach, transmission X-ray microscopy is employed to study the bulk properties of ReRAM devices. At first, a new procedure for sample preparation based on a selective etching process is developed in order to realize photon-transparent samples. Investigations of switched devices reveal a significant contribution of Ti 3+ states within growth defects. In contrast to the indirect evidence in previous studies, this observation directly confirms that the resistance change is based on a local redox-process. The localization of the switching process within the growth defects is explained by a self-accelerating process due to Joule heating within the pre-reduced defects. In a second approach, after removal of the top electrode the chemical and electronic structure of the former interface between the

  18. Micro-spectroscopic investigation of valence change processes in resistive switching SrTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Koehl, Annemarie

    2014-05-15

    Due to physical limitations of the currently used flash memory in terms of writing speed and scalability, new concepts for data storage attract great interest. A possible alternative with promising characteristics are so-called ''Resistive Random Access Memories'' (ReRAM). These memory devices are based on the resistive switching effect where the electrical resistance of a metal-insulator-metal (MIM) structure can be switched reversibly by a current or voltage pulse. Although this effect attracted wide scientific as well as commercial interest, up to now the it is not fully understood on a microscopic scale. Consequently, in this work the chemical and physical modifications caused by the resistive switching process are studied by spectroscopic techniques. As most switching models predict a strongly localized rather than a homogeneous effect, advanced micro-spectroscopy techniques are employed where additionally the lateral structure of the sample is imaged. In this work Fe-doped SrTiO{sub 3} films are used as model material due to the thorough understanding of their defect chemistry. The epitaxial thin films are prepared by pulsed laser deposition. In a first approach, transmission X-ray microscopy is employed to study the bulk properties of ReRAM devices. At first, a new procedure for sample preparation based on a selective etching process is developed in order to realize photon-transparent samples. Investigations of switched devices reveal a significant contribution of Ti{sup 3+} states within growth defects. In contrast to the indirect evidence in previous studies, this observation directly confirms that the resistance change is based on a local redox-process. The localization of the switching process within the growth defects is explained by a self-accelerating process due to Joule heating within the pre-reduced defects. In a second approach, after removal of the top electrode the chemical and electronic structure of the former interface

  19. Surface effects of electrode-dependent switching behavior of resistive random-access memory

    KAUST Repository

    Ke, Jr Jian

    2016-09-26

    The surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device\\'s switching functionality. A thermodynamic model of the oxygen chemisorption process was proposed to explain this electrode-dependent switching behavior. The temperature-dependent switching voltage demonstrates that the ReRAM devices fabricated with Pt electrodes have a lower activation energy for the chemisorption process, resulting in a better resistive switching performance. These findings provide an in-depth understanding of electrode-dependent switching behaviors and can serve as design guidelines for future ReRAM devices.

  20. Resistive switching in individual ZnO nanorods: delineating the ionic current by photo-stimulation

    Science.gov (United States)

    Bandopadhyay, K.; Prajapati, K. N.; Mitra, J.

    2018-03-01

    Resistive switching in nanostructured metal oxide semiconductors has been broadly understood to originate from the dynamics of its native point defects. Experimental results of switching observed in individual n-ZnO nanorods grown on a p-type polymer is presented along with an empirical model describing the underlying defect dynamics necessary to observe bi-polar switching. Selective photo excitation of electrons into the defect states delineates the incidence and role of an ionic current in the switching behavior. The understanding further extends to the observance of a negative differential resistance regime that is often coincident in such systems. The analysis not only unifies the underlying physics of the two phenomena but also offers further confidence in the proposed mechanism. We conclude by demonstrating that the effective memresistance of such devices is a strong function of the operating bias and identify parameters that optimize switching performance.

  1. Resistive switching phenomena in Li{sub x}CoO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Moradpour, Alec; Auban-Senzier, Pascale; Pasquier, Claude [Laboratoire de Physique des Solides, UMR C8502 CNRS, University Paris-Sud 11, Orsay (France); Schneegans, Olivier; Chretien, Pascal [Laboratoire de Genie Electrique de Paris, UMR 8507 CNRS, Paris VI et Paris-Sud Universities, Supelec, Gif-sur-Yvette (France); Franger, Sylvain; Revcolevschi, Alexandre; Dragos, Oana; Ciomaga, Vasile-Cristian [Institut de Chimie Moleculaire et des Materiaux d' Orsay, Laboratoire de Physico-Chimie de l' Etat Solide, UMR 8182 CNRS, University Paris-Sud, Orsay (France); Salot, Raphael [CEA/LITEN, Grenoble (France); Svoukis, Efthymios; Giapintzakis, John [Department of Mechanical and Manufacturing Engineering, University of Cyprus, Nicosia (Cyprus)

    2011-09-22

    A substantial resistive switching of Li{sub x}CoO{sub 2} mixed-conductor thin films is observed for the first time. The occurrence of possible bipolar switching in these oxide thin films is by current-voltage curves, investigated by conducting-probe atomic force microscopy (CP-AFM). The films are incorporated into an {l_brace}Au/Li{sub x}CoO{sub 2}/p++Si{r_brace} device and exhibit a significant resistive-switching process involving a ratio of over four orders of magnitude. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Study of influence on micro-fabricated resistive switching organic ...

    Indian Academy of Sciences (India)

    current compliance (CC) is applied to 100 μA during I–V sweep. When the voltage goes to 0.8 V, the current increases rapidly which means the OFF state switches to the ON state. During the negative side I–V sweep, when the voltage goes to −2.2 V, the current decreases rapidly which means the ON state switches to the ...

  3. Smooth torque speed characteristic of switched reluctance motors

    DEFF Research Database (Denmark)

    Zeng, Hui; Chen, Zhe; Chen, Hao

    2014-01-01

    The torque ripple of switched reluctance motors (SRMs) is the main disadvantage that limits the industrial application of these motors. Although several methods for smooth-toque operation (STO) have been proposed, STO works well only within a certain torque and speed range because...

  4. Scaling Effect on Unipolar and Bipolar Resistive Switching of Metal Oxides

    Science.gov (United States)

    Yanagida, Takeshi; Nagashima, Kazuki; Oka, Keisuke; Kanai, Masaki; Klamchuen, Annop; Park, Bae Ho; Kawai, Tomoji

    2013-01-01

    Electrically driven resistance change in metal oxides opens up an interdisciplinary research field for next-generation non-volatile memory. Resistive switching exhibits an electrical polarity dependent “bipolar-switching” and a polarity independent “unipolar-switching”, however tailoring the electrical polarity has been a challenging issue. Here we demonstrate a scaling effect on the emergence of the electrical polarity by examining the resistive switching behaviors of Pt/oxide/Pt junctions over 8 orders of magnitudes in the areas. We show that the emergence of two electrical polarities can be categorised as a diagram of an electric field and a cell area. This trend is qualitatively common for various oxides including NiOx, CoOx, and TiO2-x. We reveal the intrinsic difference between unipolar switching and bipolar switching on the area dependence, which causes a diversity of an electrical polarity for various resistive switching devices with different geometries. This will provide a foundation for tailoring resistive switching behaviors of metal oxides. PMID:23584551

  5. Neutron effects on the electrical and switching characteristics of NPN bipolar power transistors

    Science.gov (United States)

    Frasca, Albert J.; Schwarze, Gene E.

    1988-01-01

    The use of nuclear reactors to generate electrical power for future space missions will require the electrical components used in the power conditioning, control, and transmission subsystem to operate in the associated radiation environments. An initial assessment of neutron irradiation on the electrical and switching characteristics of commercial high power NPN bipolar transistors was investigated. The results clearly show the detrimental effects caused by neutron irradiation on the electrical and switching characteristics of the NPN bipolar power transistor.

  6. Bipolar resistive switching of solution processed TiO{sub 2}–graphene oxide nanocomposite for nonvolatile memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Senthilkumar, V.; Kathalingam, A.; Valanarasu, S.; Kannan, V.; Rhee, Jin-Koo, E-mail: jkrhee@dgu.edu

    2013-11-08

    In this study, we report the observation of memory effect in TiO{sub 2}–GO nanocomposite films. Electrical properties of the prepared Al/TiO{sub 2}–GO composite/ITO devices have shown stable and reproducible bipolar resistive switching behavior. The TiO{sub 2}–GO composite films were prepared using solution method by spin coating technique. Observed results have shown that the inclusion of GO in the TiO{sub 2} matrix have exhibited a significant role in the resistive switching mechanism. The device has exhibited an excellent memory characteristic with low operating voltages, good endurance up to 10{sup 5} cycles and long retention time more than 5×10{sup 3} s.

  7. Memory resistive switching in CeO2-based film microstructures patterned by a focused ion beam

    DEFF Research Database (Denmark)

    Velichko, A.; Boriskov, P.; Grishin, A.

    2014-01-01

    ) with insulating properties and a semiconducting ormetallic lowresistance state (ON) with resistance ratios up to 104. The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment......Heteroepitaxial CeO2 (80 nm)/La0.5Sr0.5CoO3 (500 nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO2 microjunctions patterned by a focused ion beam on a La0.5Sr0.5CoO3 film exhibit reproducible reversible switching between a high resistance state (OFF...... of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown. © 2014 Elsevier B.V. All rights reserved....

  8. Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

    Directory of Open Access Journals (Sweden)

    Rajesh K. Katiyar

    2015-03-01

    Full Text Available We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with non-overlapping Set and Reset voltages, On/Off resistance ratio of ∼104 and good data retention (verified for up to 3,000 s. We have also observed photovoltaic response in both high and low resistance states, where the photocurrent density was about three orders of magnitude higher in the low resistance state as compared to the high resistance state at an illumination power density of ∼100 mW/cm2. Resistive switching mechanisms in both resistance states of the planar device can be explained by using the conduction filament (thermo-chemical model.

  9. Highly compact (4F2) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application.

    Science.gov (United States)

    Chen, Bing; Wang, Xinpeng; Gao, Bin; Fang, Zheng; Kang, Jinfeng; Liu, Lifeng; Liu, Xiaoyan; Lo, Guo-Qiang; Kwong, Dim-Lee

    2014-10-31

    To simplify the architecture of a neuromorphic system, it is extremely desirable to develop synaptic cells with the capacity of low operation power, high density integration, and well controlled synaptic behaviors. In this study, we develop a resistive switching device (ReRAM)-based synaptic cell, fabricated by the CMOS compatible nano-fabrication technology. The developed synaptic cell consists of one vertical gate-all-around Si nano-pillar transistor (1T) and one transition metal-oxide based resistive switching device (1R) stacked on top of the vertical transistor directly. Thanks to the vertical architecture and excellent controllability on the ON/OFF performance of the nano-pillar transistor, the 1T1R synaptic cell shows excellent characteristics such as extremely high-density integration ability with 4F(2) footprint, ultra-low operation current (<2 nA), fast switching speed (<10 ns), multilevel data storage and controllable synaptic switching, which are extremely desirable for simplifying the architecture of neuromorphic system.

  10. CHARACTERISTICS OF METHICILLIN-RESISTANT STAPHYLOCOCCI

    Science.gov (United States)

    Sutherland, R.; Rolinson, G. N.

    1964-01-01

    Sutherland, R. (Beecham Research Laboratories Ltd., Betchworth, Surrey, England), and G. N. Rolinson. Characteristics of methicillin-resistant staphylococci. J. Bacteriol. 87:887–899. 1964.—Cultures of naturally occurring methicillin-resistant staphylococci obtained from a number of hospitals were examined for the nature and degree of resistance to methicillin and other antibiotics. All the cultures tested were similar in that they consisted of mixed populations in which the majority of cells were of normal sensitivity to methicillin with a minority showing methicillin resistance. The resistant members also differed from the rest of the population in that they grew more slowly even in the absence of methicillin. Pure cultures of the resistant minority were obtained readily but, on repeated transfer in the absence of methicillin, resistance was lost and the cultures reverted to mixed populations similar to the original naturally occurring strains. When methicillin-sensitive staphylococci were repeatedly subcultured in the presence of methicillin, a mixed population was obtained in which only a minority of cells were resistant to the antibiotic; in this respect, the cultures of methicillin-resistant staphylococci selected in vitro resembled the naturally occurring strains. The original cultures of methicillin-resistant staphylococci comprised populations of cells with uniform sensitivity or insensitivity to other antibiotics. The resistance of these staphylococci to methicillin was not due to increased ability to inactivate the drug but to intrinsic insensitivity to methicillin. PMID:14137628

  11. Bipolar resistive switching behaviour in Mn 0.03 Zn 0.97 O ...

    Indian Academy of Sciences (India)

    C o n v e r s e l y , t h e r a t i o i n t h e A g / M Z O / L Z M O / p ^+$-Si device began to decrease after 100 successive switching cycles. The LZMO/MZO interface could play an important role in the resistive switching behaviour of the devices. The dominant conduction mechanism of the two devices is charge-trap emission.

  12. Bipolar resistive switching behaviour in Mn0. 03Zn0. 97O ...

    Indian Academy of Sciences (India)

    C o n v e r s e l y , t h e r a t i o i n t h e A g / M Z O / L Z M O / p ^+$-Si device began to decrease after 100 successive switching cycles. The LZMO/MZO interface could play an important role in the resistive switching behaviour of the devices. The dominant conduction mechanism of the two devices is charge-trap emission.

  13. Bipolar resistive switching properties of Ti-CuO/(hexafluoro-hexa-peri-hexabenzocoronene)-Cu hybrid interface device: Influence of electronic nature of organic layer

    International Nuclear Information System (INIS)

    Singh, Bharti; Mehta, B. R.; Varandani, Deepak; Govind; Narita, A.; Feng, X.; Müllen, K.

    2013-01-01

    This study reports the change in the structural and junction properties of Ti-CuO-Cu structure on incorporation of a 2-dimensional (2D) organic layer comprising of n-type hexafluoro-hexa-peri-hexabenzocoronene (6F-HBC). A bipolar resistive switching is observed in the device having interface between sputter deposited copper oxide (CuO) and vacuum sublimated 6F-HBC hybrid interface. The CuO/6F-HBC hybrid interface exhibits rectifying I-V characteristics in complete contrast to the ohmic and rectifying characteristics of junctions based on individual 6F-HBC and CuO layers. Large change in resistive switching property from unipolar resistive switching in CuO/HBC to bipolar resistive switching in CuO/6F-HBC interface was observed. At the CuO/6F-HBC interface, C1s peak corresponding to fluorinated carbon is shifted by 0.68 eV towards higher binding energy (BE) side and O1s peak due to non-lattice oxygen is shifted by 0.6 eV towards lower BE, confirming the interaction of O 2− ion in CuO with fluorinated carbon atoms in 6F-HBC at the hybrid interface. Correlation between conductive atomic force microscopy images and atomic force microscopy topography images, I-V characteristics in conducting, non-conducting, and pristine regions along with x-ray photoelectron spectroscopy results establishes the important role of hybrid interface to determining the resistive switching properties. This study demonstrates that the resistive switching and interface properties of a hybrid device based on inorganic and organic 2D materials can be modified by changing the electronic properties of organic layer by attaching suitable functional groups.

  14. Resistive switching in ZrO2 based metal-oxide-metal structures

    International Nuclear Information System (INIS)

    Kaerkkaenen, Irina

    2014-01-01

    /Ti/Pt cells while the thickness of the electrochemically active electrode (Ti) was varied from 0 nm to 40 nm. Cells with a thin EAE (<20 nm Ti) exhibited a UP-type RS behavior, while cells with thick EAE (>20 nm Ti) showed BP switching characteristics at a lower current compliance as the UP switching cells. A detailed structural analysis of the ozone grown ZrO 2 films revealed a polycrystalline structure of columnar shaped grains with a meta-stable cubic-tetragonal ZrO 2 phase. In the second part of the thesis an empirical model for the polarity dependence of the RS in the ALD ZrO 2 based devices as a function of the EAE thickness was suggested. The model assumed a columnar shaped microstructure and certain impurity content for the ZrO 2 films. In addition, the results of current-voltage behavior, temperature dependency of the resistance states and impedance spectroscopy (IS) measurements of different devices in different RS states were considered. Impedance spectroscopy measurements of UP and BP type switching devices with the same ZrO 2 films but with different EAE thicknesses were carried out for the states prior to electroforming (pristine), after RS into the ON-state and after RS into the OFF-state. The different devices in their pristine states exhibited nearly identical IS characteristics while the ON and OFF states of the UP and BP devices revealed pronounced differences. In the model, the UP switching in ZrO 2 based devices with thin EAE was described as a result of a noncomplete local reduction of the grain boundary cores, which might gave rise to a hard thermal breakdown and the formation of metallic like conduction paths. On the contrary, the suggested idea for BP switching of ZrO 2 based devices with thick EAE based on the formation of local semiconducting oxygen depleted ZrO 2-x filament-like regions along certain positions, probably preferably at grain boundary cores. The combination of the structural analysis with measurements of the temperature

  15. Reversible electrical resistance switching in GeSbTe thin films : An electrolytic approach without amorphous-crystalline phase-change

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George; De Hosson, Jeff Th. M.; Wouters, DJ; Hong, S; Soss, S; Auciello, O

    2008-01-01

    Besides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named 'polarity-dependent resistance (PDR) switching'. 'Me electrical resistance of the film switches between a low- and high-state

  16. Focused Role of an Organic Small-Molecule PBD on Performance of the Bistable Resistive Switching.

    Science.gov (United States)

    Li, Lei; Sun, Yanmei; Ai, Chunpeng; Lu, Junguo; Wen, Dianzhong; Bai, Xuduo

    2015-12-01

    An undoped organic small-molecule 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) and a kind of nanocomposite blending poly(methyl methacrylate) (PMMA) into PBD are employed to implement bistable resistive switching. For the bistable resistive switching indium tin oxide (ITO)/PBD/Al, its ON/OFF current ratio can touch 6. What is more, the ON/OFF current ratio, approaching to 10(4), is available due to the storage layer PBD:PMMA with the chemical composition 1:1 in the bistable resistive switching ITO/PBD:PMMA/Al. The capacity, data retention of more than 1 year and endurance performance (>10(4) cycles) of ITO/PBD:PMMA(1:1)/Al, exhibits better stability and reliability of the samples, which underpins the technique and application of organic nonvolatile memory.

  17. Conducting mechanism of Ag-diffused Bi-Te based resistive switching devices

    Science.gov (United States)

    Liu, N.; Yan, P.; Li, Y.; Lu, K.; Sun, H. J.; Ji, H. K.; Xue, K. H.; Miao, X. S.

    2018-02-01

    The forming-free resistive switching (RS) and conducting mechanism of Ag-diffused BiTe chalcogenide thin film has been investigated. The mutual diffusion of Ag, Bi and Te elements at the interface is proved to suppress the crystallization of the as-deposited BiTe film. The amorphization of BiTe and the Schottky barrier between Ag and BiTe contribute to high resistance state (HRS) of the switching devices. When switched to low resistance state (LRS), the coexistence of metallic conduction and variable-range hopping is found to be the dominant conduction mechanism. The temperature dependence of LRS exhibits an interesting transport behavior, so that a positive temperature coefficient becomes a negative one at 24 K. Our results help to further understand the conduction mechanism and promote the design for future nonvolatile memory applications.

  18. High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition

    Science.gov (United States)

    Chen, Zhe; Zhang, Feifei; Chen, Bing; Zheng, Yang; Gao, Bin; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng

    2015-02-01

    Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

  19. Study on Resistive Switching Property of Ti Doped Novel NiO Thin Films

    Science.gov (United States)

    Li, Y.; Zhao, G. Y.; Kou, Z. B.; Liu, J. C.; Zhu, R.

    2018-01-01

    Ti doped nickel oxide thin films have been fabricated by sol-gel dip-coating process using nickel acetate and tetrabutyl titanate as source materials. The effect of the amount of Ti dopant on the surface roughness, optical, chemical state and electrical properties of NiO: Ti thin films was observed by atomic force microscopy (AFM), Uv-vis spectroscopy, X-ray photoelectron spectroscopy(XPS) and I-V measurement, respectively. Results show that the Ti doping is an effective ways to improve the resistive switching behaviors and it is a convenient way to understand the mechanism of the resistive switching behaviors.

  20. Electroforming free resistive switching memory in two-dimensional VOx nanosheets

    KAUST Repository

    Hota, Mrinal Kanti

    2015-10-21

    We report two-dimensional VOx nanosheets containing multi-oxidation states (V5+, V4+, and V3+), prepared by a hydrothermal process for potential applications in resistive switching devices. The experimental results demonstrate a highly reproducible, electroforming-free, low SET bias bipolar resistive switching memory performance with endurance for more than 100 cycles maintaining OFF/ON ratio of ∼60 times. These devices show better memory performance as compared to previously reported VOx thin film based devices. The memory mechanism in VOx is proposed to be originated from the migration of oxygen vacancies/ions, an influence of the bottom electrode and existence of multi-oxidation states.

  1. Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates.

    Science.gov (United States)

    Pertsev, N A; Kohlstedt, H

    2010-11-26

    A voltage-controlled resistive switching is predicted for ferromagnetic multilayers and spin valves mechanically coupled to a ferroelectric substrate. The switching between low- and high-resistance states results from the strain-driven magnetization reorientations by about 90°, which are shown to occur in ferromagnetic layers with a high magnetostriction and weak cubic magnetocrystalline anisotropy. Such reorientations, not requiring external magnetic fields, can be realized experimentally by applying moderate electric field to a thick substrate (bulk or membrane type) made of a relaxor ferroelectric having ultrahigh piezoelectric coefficients. The proposed multiferroic hybrids exhibiting giant magnetoresistance may be employed as electric-write nonvolatile magnetic memory cells with nondestructive readout.

  2. Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.

    Science.gov (United States)

    Munde, M S; Mehonic, A; Ng, W H; Buckwell, M; Montesi, L; Bosman, M; Shluger, A L; Kenyon, A J

    2017-08-24

    We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiO x ) films with varying degrees of roughness at the oxide-electrode interface. By combining electrical probing measurements, atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM), we observe that devices with rougher oxide-electrode interfaces exhibit lower electroforming voltages and more reliable switching behaviour. We show that rougher interfaces are consistent with enhanced columnar microstructure in the oxide layer. Our results suggest that columnar microstructure in the oxide will be a key factor to consider for the optimization of future SiOx-based resistance random access memory.

  3. Switching Characteristics of a 4H-SiC Based Bipolar Junction Transistor to 200 C

    Science.gov (United States)

    Niedra, Janis M.

    2006-01-01

    Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from room to 200 C. All testing was done in a pulse mode at low duty cycle (approx.0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of 7 V. These base drive signals were implemented by 850 V, gated power pulsers, having rise-times of roughly 10 ns, or less. Base charge sweep-out with a 7 V negative pulse did not produce the large reverse base current pulse seen in a comparably rated Si-based BJT. This may be due to a very low charge storage time. The decay of the collector current was more linear than its exponential-like rise. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 Omega non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 80 to 94 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 34 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 72 to 84 ns with the 7 V sweep-out.

  4. Light-activated resistance switching in SiOx RRAM devices

    Science.gov (United States)

    Mehonic, A.; Gerard, T.; Kenyon, A. J.

    2017-12-01

    We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin oxide/SiOx/p-Si Metal/Oxide/Semiconductor structure, with resistance switching taking place in a 35 nm thick SiOx layer. The optical activity of the devices was investigated by characterising them in a range of voltage and light conditions. Devices respond to illumination at wavelengths in the range of 410-650 nm but are unresponsive at 1152 nm, suggesting that photons are absorbed by the bottom p-type silicon electrode and that generation of free carriers underpins optical activity. Applied light causes charging of devices in the high resistance state (HRS), photocurrent in the low resistance state (LRS), and lowering of the set voltage (required to go from the HRS to LRS) and can be used in conjunction with a voltage bias to trigger switching from the HRS to the LRS. We demonstrate negative correlation between set voltage and applied laser power using a 632.8 nm laser source. We propose that, under illumination, increased electron injection and hence a higher rate of creation of Frenkel pairs in the oxide—precursors for the formation of conductive oxygen vacancy filaments—reduce switching voltages. Our results open up the possibility of light-triggered RRAM devices.

  5. Static and Switching Characteristics of a 4H-SiC Based BJT to 200 C

    Science.gov (United States)

    Niedra, Janis M.; Schwarze, Gene E.

    2006-01-01

    Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from 23 to 200 C. All testing was done in a pulse mode at low duty cycle (approx. 0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of either 7 or 0.6 V. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 OMEGA non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 81 to 97 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 30 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 61 to 77 ns with the 7 V sweep-out and 130 to 150 ns with the 0.6 V sweep-out. At a fixed temperature and I(sub C), the turn-off time decreased slightly with decreasing I(sub B), for I(sub B) sufficient to still provide full turn-on. The ratio of conduction to switching losses is estimated, based on the observed I(sub C) transition times and static curves. An estimate at 200 kHz and a 50 percent duty cycle shows that under practicable conditions the two losses can be comparable. Hence the evidence obtained does not support the occasionally voiced concern of necessarily unacceptably high conduction losses in SiC-based BJTs.

  6. Improved resistive switching reliability by using dual-layer nanoporous carbon structure

    Science.gov (United States)

    Tao, Ye; Li, Xuhong; Wang, Zhongqiang; Xu, Haiyang; Ding, Wentao; Ma, Jiangang; Liu, Yichun

    2017-10-01

    We optimized the diameter and microgeometry of preformed conductive filaments (CFs) to improve the switching reliability of copper/nanoporous amorphous carbon (a-C)/platinum memory devices. Forming-free devices were obtained because of the introduction of preformed CFs into the nanoporous layer during the copper electrode evaporation process. The switching fluctuation decreased with the increasing preformed CF size in a certain range; however, the device with stronger preformed CFs suffered from high current in the first RESET process. Furthermore, to achieve both high switching uniformity and low power consumption, a dual-layer structure was proposed to regulate the microgeometry of preformed CFs. Compared with those of a pristine device and single-layer nanoporous device, the fluctuation of high/low resistance values was further suppressed to 26% and 21%, respectively. In addition, Resistive random access memory (RRAM) devices exhibited a fast switching speed (endurance (>105 cycles), and long retention time (>105 s at 85 °C). These results reveal the key role of preformed CF optimization in resistive switching performance improvement, providing an effective approach to develop high-performance RRAM devices.

  7. Thread selection according to predefined power characteristics during context switching on compute nodes

    Science.gov (United States)

    None, None

    2013-06-04

    Methods, apparatus, and products are disclosed for thread selection during context switching on a plurality of compute nodes that includes: executing, by a compute node, an application using a plurality of threads of execution, including executing one or more of the threads of execution; selecting, by the compute node from a plurality of available threads of execution for the application, a next thread of execution in dependence upon power characteristics for each of the available threads; determining, by the compute node, whether criteria for a thread context switch are satisfied; and performing, by the compute node, the thread context switch if the criteria for a thread context switch are satisfied, including executing the next thread of execution.

  8. Spike-timing dependent plasticity in a transistor-selected resistive switching memory

    International Nuclear Information System (INIS)

    Ambrogio, S; Balatti, S; Nardi, F; Facchinetti, S; Ielmini, D

    2013-01-01

    In a neural network, neuron computation is achieved through the summation of input signals fed by synaptic connections. The synaptic activity (weight) is dictated by the synchronous firing of neurons, inducing potentiation/depression of the synaptic connection. This learning function can be supported by the resistive switching memory (RRAM), which changes its resistance depending on the amplitude, the pulse width and the bias polarity of the applied signal. This work shows a new synapse circuit comprising a MOS transistor as a selector and a RRAM as a variable resistance, displaying spike-timing dependent plasticity (STDP) similar to the one originally experienced in biological neural networks. We demonstrate long-term potentiation and long-term depression by simulations with an analytical model of resistive switching. Finally, the experimental demonstration of the new STDP scheme is presented. (paper)

  9. Evolution of Ni nanofilaments and electromagnetic coupling in the resistive switching of NiO

    Science.gov (United States)

    Luo, Yuxiang; Zhao, Diyang; Zhao, Yonggang; Chiang, Fu-Kuo; Chen, Pengcheng; Guo, Minghua; Luo, Nannan; Jiang, Xingli; Miao, Peixian; Sun, Ying; Chen, Aitian; Lin, Zhu; Li, Jianqi; Duan, Wenhui; Cai, Jianwang; Wang, Yayu

    2014-12-01

    Resistive switching effect in conductor/insulator/conductor thin-film stacks is promising for resistance random access memory with high-density, fast speed, low power dissipation and high endurance, as well as novel computer logic architectures. NiO is a model system for the resistive switching effect and the formation/rupture of Ni nanofilaments is considered to be essential. However, it is not clear how the nanofilaments evolve in the switching process. Moreover, since Ni nanofilaments should be ferromagnetic, it provides an opportunity to explore the electromagnetic coupling in this system. Here, we report a direct observation of Ni nanofilaments and their specific evolution process for the first time by a combination of various measurements and theoretical calculations. We found that multi-nanofilaments are involved in the low resistance state and the nanofilaments become thin and rupture separately in the RESET process with subsequent increase of the rupture gaps. Theoretical calculations reveal the role of oxygen vacancy amount in the evolution of Ni nanofilaments. We also demonstrate electromagnetic coupling in this system, which opens a new avenue for multifunctional devices.Resistive switching effect in conductor/insulator/conductor thin-film stacks is promising for resistance random access memory with high-density, fast speed, low power dissipation and high endurance, as well as novel computer logic architectures. NiO is a model system for the resistive switching effect and the formation/rupture of Ni nanofilaments is considered to be essential. However, it is not clear how the nanofilaments evolve in the switching process. Moreover, since Ni nanofilaments should be ferromagnetic, it provides an opportunity to explore the electromagnetic coupling in this system. Here, we report a direct observation of Ni nanofilaments and their specific evolution process for the first time by a combination of various measurements and theoretical calculations. We found

  10. Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films.

    Science.gov (United States)

    Shang, Jie; Xue, Wuhong; Ji, Zhenghui; Liu, Gang; Niu, Xuhong; Yi, Xiaohui; Pan, Liang; Zhan, Qingfeng; Xu, Xiao-Hong; Li, Run-Wei

    2017-06-01

    Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. Upon optimization of the microstructure wherein an amorphous-nanocrystalline hafnium oxide thin film is fabricated, an all-oxide based transparent RRAM device with stable resistive switching behavior that can withstand a mechanical tensile stress of up to 2.12% is obtained. It is demonstrated that the superior electrical, thermal and mechanical performance of the ITO/HfO x /ITO device can be ascribed to the formation of pseudo-straight metallic hafnium conductive filaments in the switching layer, and is only limited by the choice of electrode materials. When the ITO bottom electrode is replaced with platinum metal, the mechanical failure threshold of the device can be further extended.

  11. Methodology, Measurement and Analysis of Flow Table Update Characteristics in Hardware OpenFlow Switches

    KAUST Repository

    Kuźniar, Maciej

    2018-02-15

    Software-Defined Networking (SDN) and OpenFlow are actively being standardized and deployed. These deployments rely on switches that come from various vendors and differ in terms of performance and available features. Understanding these differences and performance characteristics is essential for ensuring successful and safe deployments.We propose a systematic methodology for SDN switch performance analysis and devise a series of experiments based on this methodology. The methodology relies on sending a stream of rule updates, while relying on both observing the control plane view as reported by the switch and probing the data plane state to determine switch characteristics by comparing these views. We measure, report and explain the performance characteristics of flow table updates in six hardware OpenFlow switches. Our results describing rule update rates can help SDN designers make their controllers efficient. Further, we also highlight differences between the OpenFlow specification and its implementations, that if ignored, pose a serious threat to network security and correctness.

  12. Phenotype switching : tumor cell plasticity as a resistance mechanism and target for therapy

    NARCIS (Netherlands)

    Kemper, K.; de Goeje, P.L.; Peeper, D.S.; van Amerongen, R.

    2014-01-01

    Mutations in BRAF are present in the majority of patients with melanoma, rendering these tumors sensitive to targeted therapy with BRAF and MEK inhibitors. Unfortunately, resistance almost invariably develops. Recently, a phenomenon called "phenotype switching" has been identified as an escape

  13. Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3

    Directory of Open Access Journals (Sweden)

    Xi Zou

    2012-09-01

    Full Text Available Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application. To clarify the underlying mechanism of resistive switching, a planar device can provide information that is not accessible in conventional vertical sandwich structures. Here we report the observation of resistive switching behavior in a Pt/Ba0.7Sr0.3TiO3/Pt planar device. Using in-situ scanning Kelvin probe microscopy, we demonstrate that charge trapping/detrapping around the Pt/Ba0.7Sr0.3TiO3 interface modulates the Schottky barrier, resulting in the observed resistive switching. The findings are valuable for the understanding of resistive switching in oxide materials.

  14. Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

    Science.gov (United States)

    Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

    2018-01-01

    Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

  15. Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays

    International Nuclear Information System (INIS)

    Yu Shimeng; Liang Jiale; Wu Yi; Wong, H-S Philip

    2010-01-01

    Recently a prototype of complementary resistive switches has been proposed to solve the sneak-path problem in passive crossbar memory arrays. To further evaluate the potential of this novel cell structure for practical applications, we present a modeling analysis to capture its switching dynamics and analyze its unique read/write schemes. The model is corroborated by experimental data. We found a trade-off between the read voltage window and write voltage window. The constraint from avoiding disturbance on unselected cells is critical for proper functionality, which in turn limits the writing speed.

  16. Resistive switching effects in CeO2/La0.7(Sr0.1Ca0.9)0.3MnO3/Pt heterostructures prepared by pulse laser deposition method

    International Nuclear Information System (INIS)

    Chen, X.G.; Fu, J.B.; Li, L.Z.; Yun, C.; Zhao, H.; Zhang, X.F.; Wang, C.S.; Yang, Y.C.; Yang, J.B.

    2014-01-01

    The heterostructural junctions of CeO 2 /La 0.7 (Sr 0.1 Ca 0.9 ) 0.3 MnO 3 /Pt (CeO 2 /LSCMO/Pt) were prepared using pulse laser deposition technique. Their resistive switching (RS) behavior was investigated. As compared to the metal/manganite/Pt junction, the CeO 2 /LSCMO/Pt device displayed an improved switching characteristic. The RS effects with characteristics of bipolar, threshold, and complementary were realized by adjusting the thicknesses of the CeO 2 layer in the CeO 2 /LSCMO/Pt junctions. Under a higher external bias voltage, the threshold and complementary switching modes of the junctions could turn into bipolar switching mode. The switching behavior shows strong dependence on the O 2 partial pressure during the fabrication, indicating that the amount and behavior of the oxygen at the interface play an important role in the determination of the RS behavior. The observed switching behavior is related to the modification of the accumulation/depletion layers as well as the interfacial potential barrier due to the migration of the oxygen vacancies. - Highlights: • Heterostructure of CeO 2 /LSMO/Pt displayed an improved resistance switching characteristic. • Resistance switching with characteristics of bipolar, threshold and complementary was found. • Threshold and complementary switching mode could turn into bipolar switching mode. • Switching behavior is related to the modification of the accumulation/depletion layers. • Interfacial potential barrier due to the migration of oxygen vacancies was proposed

  17. Defect engineering of SrTiO3 thin films for resistive switching applications

    International Nuclear Information System (INIS)

    Wicklein, Sebastian

    2013-01-01

    As a matter of fact, the importance of (transition) metal oxides for modern applications in the field of energy and information technology (IT) for e.g. novel energy storage systems and solid state electronic devices is increasing. Previous studies discovered the importance of defects in an oxide for their functionality and emphasized the impact of stoichiometry on the oxide performance. A new field of interest of the memory technology sector is the so-called resistive switching phenomena where a voltage stimulus causes a thin oxide (≤10 nm) to change its resistance state from a high resistance state to a low resistance state and back. So called resistive RAM (ReRAM or RRAM) are deemed to be the future replacement (2015) for contemporary FLASH memory technology due to its extremely low energy consumption, its very fast read/write time (ns) and its possible node size 3 was used as an oxide model material and was deposited by pulsed laser deposition (PLD) onto doped and undoped SrTiO 3 single crystals to investigate the formation of defects as a function of the process parameters. By combining structural and chemical thin film analysis with detailed PLD plume diagnostics and modeling of the laser plume dynamics, it was possible to elucidate the different physical mechanisms determining the stoichiometry of SrTiO 3 during PLD. Deviations between thin film and target stoichiometry are basically a result of two effects, namely, incongruent ablation and preferential scattering of lighter ablated species during their motion towards the substrate in the O 2 background gas. It is shown that the SrTiO 3 system reacts to a non-stoichiometry with the systematic incorporation of titanium and strontium vacancies which could be detected by positron annihilation lifetime spectroscopy. The role of extrinsic dopands such as Fe is shown to have more complicated effects on the SrTiO 3 system than portrayed by theoretical considerations. The effect of defects on the resistive

  18. ABC-model analysis of gain-switched pulse characteristics in low-dimensional semiconductor lasers

    Science.gov (United States)

    Bao, Xumin; Liu, Yuejun; Weng, Guoen; Hu, Xiaobo; Chen, Shaoqiang

    2018-01-01

    The gain-switching dynamics of low-dimensional semiconductor lasers is simulated numerically by using a two-dimensional rate-equation model. Use is also made of the ABC model, where the carrier recombination rate is described by a function of carrier densities including Shockley – Read – Hall (SRH) recombination coefficient A, spontaneous emission coefficient B and Auger recombination coefficient C. Effects of the ABC parameters on the ultrafast gain-switched pulse characteristics with high-density pulse excitation are analysed. It is found that while the parameter A has almost no obvious effects, the parameters B and C have distinctly different effects: B influences significantly the delay time of the gain-switched pulse, while C affects mainly the pulse intensity.

  19. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    International Nuclear Information System (INIS)

    Ma Xiangrong; Shi Wei; Ji Weili; Xue Hong

    2011-01-01

    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch. (semiconductor devices)

  20. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    Science.gov (United States)

    Xiangrong, Ma; Wei, Shi; Weili, Ji; Hong, Xue

    2011-12-01

    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.

  1. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

    KAUST Repository

    Huang, Yi-Jen

    2016-04-07

    The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (<±1 V) and self-compliance to current up to 50 μA. When it is used for threshold switching, the low threshold current is beneficial for improving the device selectivity. The variation of oxygen distribution measured by energy dispersive X-ray spectroscopy and scanning transmission electron microscopy indicates the formation or rupture of conducting filaments in the device at different resistance states. It is therefore suggested that the push and pull actions of oxygen ions in the amorphous TiOx and polycrystalline TiOx films during the voltage sweep account for the memory switching and threshold switching properties in the device.

  2. Stochastic dynamics of resistive switching: fluctuations lead to optimal particle number

    Science.gov (United States)

    Radtke, Paul K.; Hazel, Andrew L.; Straube, Arthur V.; Schimansky-Geier, Lutz

    2017-09-01

    Resistive switching (RS) is one of the foremost candidates for building novel types of non-volatile random access memories. Any practical implementation of such a memory cell calls for a strong miniaturization, at which point fluctuations start playing a role that cannot be neglected. A detailed understanding of switching mechanisms and reliability is essential. For this reason, we formulate a particle model based on the stochastic motion of oxygen vacancies. It allows us to investigate fluctuations in the resistance states of a switch with two active zones. The vacancies’ dynamics are governed by a master equation. Upon the application of a voltage pulse, the vacancies travel collectively through the switch. By deriving a generalized Burgers equation we can interpret this collective motion as nonlinear traveling waves, and numerically verify this result. Further, we define binary logical states by means of the underlying vacancy distributions, and establish a framework of writing and reading such memory element with voltage pulses. Considerations about the discriminability of these operations under fluctuations together with the markedness of the RS effect itself lead to the conclusion, that an intermediate vacancy number is optimal for performance.

  3. Application of nanomaterials in two-terminal resistive-switching memory devices

    Directory of Open Access Journals (Sweden)

    Jianyong Ouyang

    2010-05-01

    Full Text Available Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs, nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. Dr. Jianyong Ouyang received his bachelor degree from the Tsinghua University in Beijing, China, and MSc from the Institute of Chemistry, Chinese Academy of Science. He received his PhD from the Institute for Molecular

  4. On the origin of resistive switching volatility in Ni/TiO2/Ni stacks

    International Nuclear Information System (INIS)

    Cortese, Simone; Trapatseli, Maria; Khiat, Ali; Prodromakis, Themistoklis

    2016-01-01

    Resistive switching and resistive random access memories have attracted huge interest for next generation nonvolatile memory applications, also thought to be able to overcome flash memories limitations when arranged in crossbar arrays. A cornerstone of their potential success is that the toggling between two distinct resistance states, usually a High Resistive State (HRS) and a Low Resistive State (LRS), is an intrinsic non-volatile phenomenon with the two states being thermodynamically stable. TiO 2 is one of the most common materials known to support non-volatile RS. In this paper, we report a volatile resistive switching in a titanium dioxide thin film sandwiched by two nickel electrodes. The aim of this work is to understand the underlying physical mechanism that triggers the volatile effect, which is ascribed to the presence of a NiO layer at the bottom interface. The NiO layer alters the equilibrium between electric field driven filament formation and thermal enhanced ion diffusion, resulting in the volatile behaviour. Although the volatility is not ideal for non-volatile memory applications, it shows merit for access devices in crossbar arrays due to its high LRS/HRS ratio, which are also briefly discussed.

  5. IGBT Switching Characteristic Curve Embedded Half-Bridge MMC Modelling and Real Time Simulation Realization

    Science.gov (United States)

    Zhengang, Lu; Hongyang, Yu; Xi, Yang

    2017-05-01

    The Modular Multilevel Converter (MMC) is one of the most attractive topologies in recent years for medium or high voltage industrial applications, such as high voltage dc transmission (HVDC) and medium voltage varying speed motor drive. The wide adoption of MMCs in industry is mainly due to its flexible expandability, transformer-less configuration, common dc bus, high reliability from redundancy, and so on. But, when the sub module number of MMC is more, the test of MMC controller will cost more time and effort. Hardware in the loop test based on real time simulator will save a lot of time and money caused by the MMC test. And due to the flexible of HIL, it becomes more and more popular in the industry area. The MMC modelling method remains an important issue for the MMC HIL test. Specifically, the VSC model should realistically reflect the nonlinear device switching characteristics, switching and conduction losses, tailing current, and diode reverse recovery behaviour of a realistic converter. In this paper, an IGBT switching characteristic curve embedded half-bridge MMC modelling method is proposed. This method is based on the switching curve referring and sample circuit calculation, and it is sample for implementation. Based on the proposed method, a FPGA real time simulation is carried out with 200ns sample time. The real time simulation results show the proposed method is correct.

  6. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    Directory of Open Access Journals (Sweden)

    Robert Göckeritz

    2016-04-01

    Full Text Available Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  7. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Göckeritz, Robert; Homonnay, Nico; Müller, Alexander [Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany); Fuhrmann, Bodo [Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany); Schmidt, Georg, E-mail: georg.schmidt@physik.uni-halle.de [Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany); Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany)

    2016-04-15

    Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  8. A new switching characteristics of highly doped multi-quantum well

    CERN Document Server

    Song, C K

    1999-01-01

    A new type of hysteretic current-voltage characteristics, which switched from a low conductance off-state into a high conductance on-state at a threshold voltage and the high conductance state was sustained even when the bias voltage reduced below the threshold voltage, was experimentally observed for the highly doped multi-quantum well structure. The characteristics were attributed to confinement of electrons and impact ionization of the confined electrons out of the quantum wells. The test devices employing 10 periods of quantum wells were fabricated by using AlGaAs/GaAs semiconductor heterostructure and I-V characteristics were examined.

  9. Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

    Science.gov (United States)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C.

    2016-02-01

    We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology.

  10. Tuning the resistive switching memory in a metal–ferroelectric–semiconductor capacitor by field effect structure

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S.Y., E-mail: shouyu.wang@yahoo.com [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Guo, F.; Wang, X. [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Liu, W.F., E-mail: wfliu@tju.edu.cn [Department of Applied Physics, Faculty of Science, Tianjin University, Weijin Road, Nankai District, Tianjin 300072 (China); Gao, J., E-mail: jugao@hku.hk [Department of Physics, the University of Hong Kong, Pokfulam Road (Hong Kong)

    2015-11-30

    Highlights: • Bistable or tristable electrically conducting state is observed. • Coefficient can be tuned in situ by modulating carrier's density. • The RS effects may be of significance for multi-source controlled memory devices. - Abstract: Resistive switching (RS) effects based on a correlation between ferroelectric polarization and conductivity might become of particular interest for nonvolatile memory applications, because they are not subjected to the scaling restrictions. Here we report on RS behaviors modulated by a reversal of ferroelectric polarization in heterostructures comprising of a ferroelectric layer and a semiconducting manganite film. It is found that electrically conducting state is bistable or even tristable; and via the polarization flipping, a maximum resistive switching coefficient (R{sub max}/R{sub min}) is found to be larger than 3000 with bias of 6 V in Ag/BaTiO{sub 3}/La{sub 0.8}Ca{sub 0.2}MnO{sub 3} at room temperature. More importantly, employing field-effect structure with ferroelectric PMN-PT as substrate, we found that the resistive switching behaviors can be tuned in situ by modulating the concentration of carriers in the semiconducting manganite layer. Possible mechanisms are discussed on the basis of the interplay of bound ferroelectric charges, charged defects in ferroelectric layer and mobile carriers in manganite thin films. The giant RS effects observed here may be of significance for memory devices by combing electronic conduction with magnetic, spintronic, and optical functionalities.

  11. Hydrogen-peroxide-modified egg albumen for transparent and flexible resistive switching memory

    Science.gov (United States)

    Zhou, Guangdong; Yao, Yanqing; Lu, Zhisong; Yang, Xiude; Han, Juanjuan; Wang, Gang; Rao, Xi; Li, Ping; Liu, Qian; Song, Qunliang

    2017-10-01

    Egg albumen is modified by hydrogen peroxide with concentrations of 5%, 10%, 15% and 30% at room temperature. Compared with devices without modification, a memory cell of Ag/10% H2O2-egg albumen/indium tin oxide exhibits obviously enhanced resistive switching memory behavior with a resistance ratio of 104, self-healing switching endurance for 900 cycles and a prolonged retention time for a 104 s @ 200 mV reading voltage after being bent 103 times. The breakage of massive protein chains occurs followed by the recombination of new protein chain networks due to the oxidation of amidogen and the synthesis of disulfide during the hydrogen peroxide modifying egg albumen. Ions such as Fe3+, Na+, K+, which are surrounded by protein chains, are exposed to the outside of protein chains to generate a series of traps during the egg albumen degeneration process. According to the fitting results of the double logarithm I-V curves and the current-sensing atomic force microscopy (CS-AFM) images of the ON and OFF states, the charge transfer from one trap center to its neighboring trap center is responsible for the resistive switching memory phenomena. The results of our work indicate that hydrogen- peroxide-modified egg albumen could open up a new avenue of biomaterial application in nanoelectronic systems.

  12. Compressive Load Resistance Characteristics of Rice Grain

    OpenAIRE

    Sumpun Chaitep; Chaiy R. Metha Pathawee; Pipatpong Watanawanyoo

    2008-01-01

    Investigation was made to observe the compressive load property of rice gain both rough rice and brown grain. Six rice varieties (indica and japonica) were examined with the moisture content at 10-12%. A compressive load with reference to a principal axis normal to the thickness of the grain were conducted at selected inclined angles of 0°, 15°, 30°, 45°, 60° and 70°. The result showed the compressive load resistance of rice grain based on its characteristic of yield s...

  13. High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure

    Science.gov (United States)

    Dong, B. W.; Miao, Jun; Han, J. Z.; Shao, F.; Yuan, J.; Meng, K. K.; Wu, Y.; Xu, X. G.; Jiang, Y.

    2018-03-01

    An novel heterostructure composed of multiferroic Bi(Fe0.95Cr0.05)O3 (BFCO) and high-K ZrO2 (ZO) layers is investigated. Ferroelectric and electrical properties of the BFZO/ZO heterostructure have been investigated. A pronounced bipolar ferroelectric resistive switching characteristic was achieved in the heterostructure at room temperature. Interestingly, the BFCO/ZO structures exhibit a reproducible resistive switching with a high On/Off resistance ratio ∼2×103 and long retention time. The relationship between polarization and band structure at the interface of BFCO/ZO bilayer under the positive and negative sweepings has been discussed. As a result, the BFCO/ZO multiferroic/high-K heterostructure with high On/Off resistance ratio and long retention characterizes, exhibits a potential in future nonvolatile memory application.

  14. Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

    Science.gov (United States)

    Sedghi, N.; Li, H.; Brunell, I. F.; Dawson, K.; Guo, Y.; Potter, R. J.; Gibbon, J. T.; Dhanak, V. R.; Zhang, W. D.; Zhang, J. F.; Hall, S.; Robertson, J.; Chalker, P. R.

    2017-08-01

    The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive states due to the neutralization of oxygen vacancies. The ability to alter the current in the low resistance state with set current compliance coupled with large memory window makes multilevel cell switching more favorable. The devices have set and reset voltages of <1 V with improved stability due to the fluorine doping. Density functional modeling shows that the incorporation of fluorine dopant atoms at the two-fold O vacancy site in the oxide network removes the defect state in the mid bandgap, lowering the overall density of defects capable of forming conductive filaments. This reduces the probability of forming alternative conducting paths and hence improves the current stability in the low resistance states. The doped devices exhibit more stable resistive states in both dc and pulsed set and reset cycles. The retention failure time is estimated to be a minimum of 2 years for F-doped devices measured by temperature accelerated and stress voltage accelerated retention failure methods.

  15. Negative-resistance voltage-current characteristics of superconductor contact junctions for macro-scale applications

    CERN Document Server

    Takayasu, M; Minervini, J V; 10.1109/TASC.2003.812854

    2003-01-01

    Voltage-current characteristics of mechanical pressure contact junctions between superconducting wires are investigated using a voltage-driving method. It is found that the switching regions at low voltages result from negative resistance of the contact junction. The current transport of the contact junctions is discussed from the perspective of two existing models: the multiple Andreev reflections at the two SN interfaces of a SNS (Superconductor/Normal metal /Superconductor) junction and the inhomogeneous multiple Josephson weak-link array. (13 refs).

  16. Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film

    Directory of Open Access Journals (Sweden)

    Jian-Yang Lin

    2014-01-01

    Full Text Available The electrical conduction and bipolar switching properties of resistive random access memory (RRAM cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144 thin films were investigated. Experimentally, the (119-oriented CBTi144 thin films were deposited onto the ITO/glass substrates by RF magnetron sputtering followed by rapid thermal annealing (RTA at a temperature range of 450–550°C. The surface morphologies and crystal structures of the CBTi144 thin films were examined by using field-emission scanning electron microscopy and X-ray diffraction measurements. The on/off ratio and switching behaviors of the transparent Al/CBTi144/ITO/glass RRAM devices were further discussed in this work.

  17. Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

    International Nuclear Information System (INIS)

    Whitcher, T J; Woon, K L; Wong, W S; Chanlek, N; Nakajima, H; Saisopa, T; Songsiriritthigul, P

    2016-01-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current–voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK–Al interface. (paper)

  18. Interfacial behavior of resistive switching in ITO-PVK-Al WORM memory devices

    Science.gov (United States)

    Whitcher, T. J.; Woon, K. L.; Wong, W. S.; Chanlek, N.; Nakajima, H.; Saisopa, T.; Songsiriritthigul, P.

    2016-02-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current-voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK-Al interface.

  19. Effects of uneven temperature of IGBT and diode on switching characteristics of bridge legs in MW-level power converters

    DEFF Research Database (Denmark)

    Luo, Haoze; Iannuzzo, Francesco; Blaabjerg, Frede

    2016-01-01

    This paper proposes an independent temperature test method for switching characteristic evaluation of high-power single switch modules. For high-power bridge legs, the commutation occurs between two discrete IGBT modules. To simulate the junction differences between two modules caused by mission ...

  20. Characteristics Analysis of an Excitation Assistance Switched Reluctance Wind Power Generator

    DEFF Research Database (Denmark)

    Liu, Xiao; Wang, Chao; Chen, Zhe

    2015-01-01

    In order to fully analyze the characteristics of an excitation assistance switched reluctance generator (EASRG) applied in wind power generation, a static model and a dynamic model are proposed. The static model is based on the 3-D finite-element method (FEM), which can be used to obtain the static...... magnetization and torque characteristics. The dynamic model, consisting of two lookup tables to describe the EASRG under different current and rotor positions, is built in Simulink to avoid the long computation time of a 3-D FEM model. The dynamic model is able to provide a more realistic assessment...

  1. Characteristics of switched reluctance motor operating in continuous and discontinuous conduction mode

    Directory of Open Access Journals (Sweden)

    Ćalasan Martin P.

    2013-01-01

    Full Text Available This paper presents mechanical characteristics of Switched Reluctance Motor (SRM when it operates in Discontinuous Conduction Mode (DCM or in Continuous Conduction Mode (CCM, i.e. when the current through the phase coils (windings flows discontinuously or continuously. Firstly, in order to maximize the output power of SRM optimization of its control parameters was performed, such that the peak and RMS values of the current do not exceed the predefined values. The optimal control parameters vs. rotation speed, as well as the corresponding characteristics of torque, power and efficiency. It is shown that with CCM the machine torque (power, at high speed, can be increased.

  2. Compliance current dependence of conversion between bipolar, unipolar, and threshold resistance switching in Mn3O4 films

    Directory of Open Access Journals (Sweden)

    Shuxiang Wu

    2015-08-01

    Full Text Available We report deterministic conversion between bipolar, unipolar and threshold resistance switching in Pt/Mn3O4/Pt memory devices via tuning compliance current. The conversion between bipolar and unipolar switching is reversible, while that between memory switching and threshold switching is irreversible. The nonvolatile bipolar resistance switching behaviors could be attributed to modification of Schottky barrier at Pt/Mn3O4 interface due to the migration of positively charged oxygen vacancies. With the increase of current, the incomplete filament formed in the set operation of bipolar switching could continue to grow and until completely form. The subsequent rupture and formation of filament consisting of oxygen vacancies under electric field are responsible for the unipolar resistance switching. Further increase of compliance current causes the volatile threshold switching behavior in the Pt/Mn3O4/Pt devices, which could be originated from formation and rupture of filament consisting of Mn ions due to the high Joule heat generated by large current.

  3. Parameters controlling microstructures and resistance switching of electrodeposited cuprous oxide thin films

    Science.gov (United States)

    Yazdanparast, Sanaz

    2016-12-01

    Cuprous oxide (Cu2O) thin films were electrodeposited cathodically from a highly alkaline bath using tartrate as complexing agent. Different microstructures for Cu2O thin films were achieved by varying the applied potential from -0.285 to -0.395 V versus a reference electrode of Ag/AgCl at 50 °C in potentiostatic mode, and separately by changing the bath temperature from 25 to 50 °C in galvanostatic mode. Characterization experiments showed that both grain size and orientation of Cu2O can be controlled by changing the applied potential. Applying a high negative potential of -0.395 V resulted in smaller grain size of Cu2O thin films with a preferred orientation in [111] direction. An increase in the bath temperature in galvanostatic electrodeposition increased the grain size of Cu2O thin films. All the films in Au/Cu2O/Au-Pd cell showed unipolar resistance switching behavior after an initial FORMING process. Increasing the grain size of Cu2O thin films and decreasing the top electrode area increased the FORMING voltage and decreased the current level of high resistance state (HRS). The current in low resistance state (LRS) was independent of the top electrode area and the grain size of deposited films, suggesting a filamentary conduction mechanism in unipolar resistance switching of Cu2O.

  4. Analysis and Simulation of Fault Characteristics of Power Switch Failures in Distribution Electronic Power Transformers

    Directory of Open Access Journals (Sweden)

    Dan Wang

    2013-08-01

    Full Text Available This paper presents research on the voltage and current distortion in the input stage, isolation stage and output stage of Distribution Electronic Power transformer (D-EPT after the open-circuit and short-circuit faults of its power switches. In this paper, the operational principles and the control methods for input stage, isolation stage and output stage of D-EPT, which work as a cascaded H-bridge rectifier, DC-DC converter and inverter, respectively, are introduced. Based on conclusions derived from the performance analysis of D-EPT after the faults, this paper comes up with the effects from its topology design and control scheme on the current and voltage distortion. According to the EPT fault characteristics, since the waveforms of relevant components heavily depend on the location of the faulty switch, it is very easy to locate the exact position of the faulty switch. Finally, the fault characteristics peculiar to D-EPT are analyzed, and further discussed with simulation on the Saber platform, as well as a fault location diagnosis algorithm.

  5. Electrical Characterization of Temperature Dependent Resistive Switching in Pr0.7C0.3MnO3

    Science.gov (United States)

    Lopez, Melinda; Salvo, Christopher; Tsui, Stephen

    2012-02-01

    Resistive switching offers a non-volatile and reversible means to possibly create a more physically compact yet larger access capacity in memory technology. While there has been a great deal of research conducted on this electrical property in oxide materials, there is still more to be learned about this at both high voltage pulsing and cryogenic temperatures. In this work, the electrical properties of a PCMO-metal interface switch were examined after application of voltage pulsing varying from 100 V to 1000 V and at temperatures starting at 293 K and lowered to 80 K. What was discovered was that below temperatures of 150 K, the resistive switching began to decrease across all voltage pulsing and that at all temperatures before this cessation, the change in resistive switching increased with higher voltage pulsing. We suggest that a variable density of charge traps at the interface is a likely mechanism, and work continues to extract more details.

  6. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei [School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China); Jiang, Xuening; Xu, Hongxia [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian116024 (China)

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  7. Defect engineering of SrTiO{sub 3} thin films for resistive switching applications

    Energy Technology Data Exchange (ETDEWEB)

    Wicklein, Sebastian

    2013-11-19

    As a matter of fact, the importance of (transition) metal oxides for modern applications in the field of energy and information technology (IT) for e.g. novel energy storage systems and solid state electronic devices is increasing. Previous studies discovered the importance of defects in an oxide for their functionality and emphasized the impact of stoichiometry on the oxide performance. A new field of interest of the memory technology sector is the so-called resistive switching phenomena where a voltage stimulus causes a thin oxide (≤10 nm) to change its resistance state from a high resistance state to a low resistance state and back. So called resistive RAM (ReRAM or RRAM) are deemed to be the future replacement (2015) for contemporary FLASH memory technology due to its extremely low energy consumption, its very fast read/write time (ns) and its possible node size <10 nm. A key challenge for the investigation of oxides and their electronic properties is the management and controlled incorporation of defects in the thin film oxide. Within this work, SrTiO{sub 3} was used as an oxide model material and was deposited by pulsed laser deposition (PLD) onto doped and undoped SrTiO{sub 3} single crystals to investigate the formation of defects as a function of the process parameters. By combining structural and chemical thin film analysis with detailed PLD plume diagnostics and modeling of the laser plume dynamics, it was possible to elucidate the different physical mechanisms determining the stoichiometry of SrTiO{sub 3} during PLD. Deviations between thin film and target stoichiometry are basically a result of two effects, namely, incongruent ablation and preferential scattering of lighter ablated species during their motion towards the substrate in the O{sub 2} background gas. It is shown that the SrTiO{sub 3} system reacts to a non-stoichiometry with the systematic incorporation of titanium and strontium vacancies which could be detected by positron annihilation

  8. Stress-Induced Resistive Switching in Pt/HfO2/Ti Devices

    Science.gov (United States)

    Zeevi, Gilad; Katsman, Alexander; Yaish, Yuval E.

    2018-02-01

    In the present work, we study the initial SET mechanism of resistive switching (RS) in Pt/HfO2/Ti devices under a static electrical stress and the RS mechanism under a bias sweeping mode with rates of 100 mV/s-300 mV/s. We characterize the thin HfO2 dielectric layer by x-ray photoelectron spectroscopy and x-ray diffraction. These findings show that the layer structure is stoichiometric and nanocrystalline with a crystal diameter of ˜ 14 Å. We measure the temporal dependence of the conductive filament growth at different temperatures and for various biases. Furthermore, these devices present stable bipolar resistive switching with a high-to-low resistive state (HRS/LRS) ratio of more than three orders of magnitude. Activation energy E RS ≈ 0.56 eV and drift current parameter V 0 ≈ 0.07 V were determined from the temporal dependence of the initial `SET' process, first HRS to LRS transition [for static electrical stress of V DS = (4.7-5.0 V)]. We analyze the results according to our model suggesting generation of double-charge oxygen vacancies at the anode and their diffusion across the dielectric layer. The double-charge vacancies transform to a single charge and then to neutral vacancies by capturing hot electrons, and form a conductive filament as soon as a critical neutral-vacancy cluster is formed across the dielectric layer.

  9. Resistance switching of the interfacial conductance in amorphous SrTiO3 heterostructures

    DEFF Research Database (Denmark)

    Christensen, Dennis; Trier, Felix; Chen, Yunzhong

    Complex oxides have attracted a lot of interest recently as this class of material exhibits a plethora of remarkable properties. In particular, a great variety of properties is observed in the heterostructure composed of lanthanum aluminate (LaAlO3) and strontium titanate (SrTiO3). For instance...... by an electric field. It has previously been demonstrated that SrTiO3 heterostructures with amorphous LaAlO3 top layers can display interfacial conductivity with similar critical thickness dependence. Here, we report resistance switching of the interfacial conductance for SrTiO3 heterostructures with amorphous...

  10. Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames

    Science.gov (United States)

    Lee, Ah Rahm; Baek, Gwang Ho; Kim, Tae Yoon; Ko, Won Bae; Yang, Seung Mo; Kim, Jongmin; Im, Hyun Sik; Hong, Jin Pyo

    2016-07-01

    Three-dimensional (3D) stackable memory frames, including nano-scaled crossbar arrays, are one of the most reliable building blocks to meet the demand of high-density non-volatile memory electronics. However, their utilization has the disadvantage of introducing issues related to sneak paths, which can negatively impact device performance. We address the enhancement of complementary resistive switching (CRS) features via the incorporation of insulating frames as a generic approach to extend their use; here, a Pt/Ta2O5-x/Ta/Ta2O5-x/Pt frame is chosen as the basic CRS cell. The incorporation of Ta/Ta2O5-x/Ta or Pt/amorphous TaN/Pt insulting frames into the basic CRS cell ensures the appreciably advanced memory features of CRS cells including higher on/off ratios, improved read margins, and increased selectivity without reliability degradation. Experimental observations identified that a suitable insulating frame is crucial for adjusting the abrupt reset events of the switching element, thereby facilitating the enhanced electrical characteristics of CRS cells that are suitable for practical applications.

  11. Impulse voltage control of continuously tunable bipolar resistive switching in Pt/Bi{sub 0.9}Eu{sub 0.1}FeO{sub 3}/Nb-doped SrTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Maocai; Liu, Meifeng; Wang, Xiuzhang [Hubei Normal University, Institute for Advanced Materials, and School of Physics and Electronic Science, Huangshi (China); Li, Meiya; Zhu, Yongdan; Zhao, Meng; Zhang, Feng; Xie, Shuai [Wuhan University, School of Physics and Technology, and Key Laboratory of Artificial Micro/Nano Structures of the Ministry of Education, Wuhan (China); Hu, Zhongqiang [Northeastern University, Department of Electrical and Computer Engineering, Boston, MA (United States); Liu, Jun-Ming [Nanjing University, Laboratory of Solid State Microstructures, Nanjing (China)

    2017-03-15

    Epitaxial Bi{sub 0.9}Eu{sub 0.1}FeO{sub 3} (BEFO) thin films are deposited on Nb-doped SrTiO{sub 3} (NSTO) substrates by pulsed laser deposition to fabricate the Pt/BEFO/NSTO (001) heterostructures. These heterostructures possess bipolar resistive switching, where the resistances versus writing voltage exhibits a distinct hysteresis loop and a memristive behavior with good retention and anti-fatigue characteristics. The local resistive switching is confirmed by the conductive atomic force microscopy (C-AFM), suggesting the possibility to scale down the memory cell size. The observed memristive behavior could be attributed to the ferroelectric polarization effect, which modulates the height of potential barrier and width of depletion region at the BEFO/NSTO interface. The continuously tunable resistive switching behavior could be useful to achieve non-volatile, high-density, multilevel random access memory with low energy consumption. (orig.)

  12. A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure

    Science.gov (United States)

    Wan, Zhenni; Darling, Robert B.; Majumdar, Arka; Anantram, M. P.

    2017-07-01

    Forming-free bipolar resistive switching behavior in an ITO/V2O5/ITO structure is observed. While the bottom ITO layer functions as a common ground electrode, the top ITO layer is an active element and used as an oxygen reservoir, with an additional metal electrode patterned on its top for making contact. In contrast to typical metal/transition metal oxide/metal based resistive memories, our device exhibits a low resistance state in its virgin state and is switched to a high resistance state when a forward bias of ˜+2.5 V is applied. The device can be reset to its original state at a reverse bias of ˜-1.5 V. A noticeable decrease in switching voltage with a reduced top contact area is observed, indicating a strong electric field enhanced switching mechanism. Different from the widely seen conductive filament mechanism in bipolar switching, we explain the switching behavior by the migration of oxygen ions at the top ITO/V2O5 interface. When oxygen ions are extracted to the ITO side, an interfacial layer with reduced oxidation states is formed and acts as a Schottky barrier that suppresses the current through the whole device. The results suggest future applications in low power, high speed integrated non-volatile memories.

  13. Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

    Science.gov (United States)

    Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

    2013-09-01

    We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

  14. Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions

    KAUST Repository

    Guan, Xinwei

    2017-11-23

    Hybrid Perovskites have emerged as a class of highly versatile functional materials with applications in solar cells, photodetectors, transistors, and lasers. Recently, there have also been reports on perovskite-based resistive switching (RS) memories, but there remain open questions regarding device stability and switching mechanism. Here, an RS memory based on a high-quality capacitor structure made of an MAPbBr3 (CH3NH3PbBr3) perovskite layer sandwiched between Au and indium tin oxide (ITO) electrodes is reported. Such perovskite devices exhibit reliable RS with an ON/OFF ratio greater than 103, endurance over 103 cycles, and a retention time of 104 s. The analysis suggests that the RS operation hinges on the migration of charged ions, most likely MA vacancies, which reversibly modifies the perovskite bulk transport and the Schottky barrier at the MAPbBr3/ITO interface. Such perovskite memory devices can also be fabricated on flexible polyethylene terephthalate substrates with high bendability and reliability. Furthermore, it is found that reference devices made of another hybrid perovskite MAPbI3 consistently exhibit filament-type switching behavior. This work elucidates the important role of processing-dependent defects in the charge transport of hybrid perovskites and provides insights on the ion-redistribution-based RS in perovskite memory devices.

  15. Research on fault characteristics about switching component failures for distribution electronic power transformers

    Science.gov (United States)

    Sang, Z. X.; Huang, J. Q.; Yan, J.; Du, Z.; Xu, Q. S.; Lei, H.; Zhou, S. X.; Wang, S. C.

    2017-11-01

    The protection is an essential part for power device, especially for those in power grid, as the failure may cost great losses to the society. A study on the voltage and current abnormality in the power electronic devices in Distribution Electronic Power Transformer (D-EPT) during the failures on switching components is presented, as well as the operational principles for 10 kV rectifier, 10 kV/400 V DC-DC converter and 400 V inverter in D-EPT. Derived from the discussion on the effects of voltage and current distortion, the fault characteristics as well as a fault diagnosis method for D-EPT are introduced.

  16. Study on Resistance Switching Properties of Na0.5Bi0.5TiO3Thin Films Using Impedance Spectroscopy.

    Science.gov (United States)

    Zhang, Ting; Zhang, Xinan; Ding, Linghong; Zhang, Weifeng

    2009-07-25

    The Na0.5Bi0.5TiO3(NBT) thin films sandwiched between Au electrodes and fluorine-doped tin oxide (FTO) conducting glass were deposited using a sol-gel method. Based on electrochemical workstation measurements, reproducible resistance switching characteristics and negative differential resistances were obtained at room temperature. A local impedance spectroscopy measurement of Au/NBT was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the Au/NBT/FTO device. It was proposed that the first and the second ionization of oxygen vacancies are responsible for the conduction in the low- and high-resistance states, respectively. The experimental results showed high potential for nonvolatile memory applications in NBT thin films.

  17. Study on Resistance Switching Properties of Na0.5Bi0.5TiO3Thin Films Using Impedance Spectroscopy

    Directory of Open Access Journals (Sweden)

    Zhang Ting

    2009-01-01

    Full Text Available Abstract The Na0.5Bi0.5TiO3(NBT thin films sandwiched between Au electrodes and fluorine-doped tin oxide (FTO conducting glass were deposited using a sol–gel method. Based on electrochemical workstation measurements, reproducible resistance switching characteristics and negative differential resistances were obtained at room temperature. A local impedance spectroscopy measurement of Au/NBT was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the Au/NBT/FTO device. It was proposed that the first and the second ionization of oxygen vacancies are responsible for the conduction in the low- and high-resistance states, respectively. The experimental results showed high potential for nonvolatile memory applications in NBT thin films.

  18. Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM

    Directory of Open Access Journals (Sweden)

    Marc Bocquet

    2014-01-01

    Full Text Available Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level.

  19. The nanocoherer: an electrically and mechanically resettable resistive switching device based on gold clusters assembled on paper

    Science.gov (United States)

    Minnai, Chloé; Mirigliano, Matteo; Brown, Simon A.; Milani, Paolo

    2018-03-01

    We report the realization of a resettable resistive switching device based on a nanostructured film fabricated by supersonic cluster beam deposition of gold clusters on plain paper substrates. Through the application of suitable voltage ramps, we obtain, in the same device, either a complex pattern of resistive switchings, or reproducible and stable switchings between low resistance and high resistance states, with an amplitude up to five orders of magnitude. Our device retains a state of internal resistance following the history of the applied voltage similar to that reported for memristors. The two different switching regimes in the same device are both stable, the transition between them is reversible, and it can be controlled by applying voltage ramps or by mechanical deformation of the substrate. The device behavior can be related to the formation, growth and breaking of junctions between the loosely aggregated gold clusters forming the nanostructured films. The fact that our cluster-assembled device is mechanically resettable suggests that it can be considered as the analog of the coherer: a switching device based on metallic powders used for the first radio communication system.

  20. Negative differential resistive switching in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin film through electrohydrodynamic atomization

    Science.gov (United States)

    Awais, Muhammad Naeem; Jo, Jeong-Dai; Choi, Kyung Hyun

    2013-10-01

    Polymeric negative differential resistive (NDR) switching was explored based on the sandwiched structure of indium titanium oxide (ITO) coated polyethyleneterepthalate(PET)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)/silver(Ag) through electrohydrodynamic atomization (EHDA) printing technique. The NDR switching in the fabricated device with the structure of ITO/PEDOT:PSS/Ag was analyzed through semiconductor device analyzer under polarity dependent bipolar sweeping voltage of less than . Effect of the current compliance (CC) in the NDR switching of the fabricated switch has been demonstrated. Multiple resistive switching sweeps were taken to scrutinize the robustness of the fabricated device over 100 cycles. The non-volatility of the as-fabricated device was checked against different time stresses over 2500 s. The switching mechanism is proposed to be due to the transition between PEDOT+ and PEDOT0 chains. The current conduction mechanism involved in the PEDOT:PSS based NDR switches is attributed to the ohmic conduction at lower voltages, while space charge limited conduction and NDR effects were prominent due to the injection of carriers at higher voltages.

  1. Experimental Study on Triggering Characteristics of a Surface Flashover Triggered Vacuum Switch

    International Nuclear Information System (INIS)

    Yao Xueling; Chen Jingliang; Sun Wei

    2010-01-01

    Triggering characteristics of triggered vacuum switch (TVS), including the discharge delay time, delay jitter, range of operational voltage and peak of pulsed current, are investigated. Both structure and experimental circuit of TVS are presented. The results indicate that TVS, as a surface flashover triggering device with high dielectric permittivity material, is with excellent triggering characteristics. When the hold-off voltage reaches 120 kV, the minimum operational voltage is 1.3 kV, and the minimum discharge delay time and jitter are 100 ns and ±10 ns, respectively. The peak current is up to 240 kA when the operational voltage reaches 100 kV. TVS can well satisfy the main demands of high voltage and current applications, and can also be used under a multi-crowbar circuit.

  2. Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

    Directory of Open Access Journals (Sweden)

    Gang Du

    2016-08-01

    Full Text Available A bidirectional threshold switching (TS characteristic was demonstrated in Ag/ZrO2/Pt electrochemical metallization cells by using the electrochemical active Ag electrode and appropriate programming operation strategies The volatile TS was stable and reproducible and the rectify ratio could be tuned to ∼107 by engineering the compliance current. We infer that the volatile behavior is essentially due to the moisture absorption in the electron beam evaporated films, which remarkably improved the anodic oxidation as well as the migration of Ag+ ions. The resultant electromotive force would act as a driving force for the metal filaments dissolution, leading to the spontaneous volatile characteristics. Moreover, conductance quantization behaviors were also achieved owing to formation and annihilation of atomic scale metal filaments in the film matrix. Our results illustrate that the Ag/ZrO2/Pt device with superior TS performances is a promising candidate for selector applications in passive crossbar arrays.

  3. Bidirectional threshold switching characteristics in Ag/ZrO{sub 2}/Pt electrochemical metallization cells

    Energy Technology Data Exchange (ETDEWEB)

    Du, Gang, E-mail: dugang@hdu.edu.cn; Li, Hongxia; Mao, Qinan; Ji, Zhenguo [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Wang, Chao [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123 (China)

    2016-08-15

    A bidirectional threshold switching (TS) characteristic was demonstrated in Ag/ZrO{sub 2}/Pt electrochemical metallization cells by using the electrochemical active Ag electrode and appropriate programming operation strategies The volatile TS was stable and reproducible and the rectify ratio could be tuned to ∼10{sup 7} by engineering the compliance current. We infer that the volatile behavior is essentially due to the moisture absorption in the electron beam evaporated films, which remarkably improved the anodic oxidation as well as the migration of Ag{sup +} ions. The resultant electromotive force would act as a driving force for the metal filaments dissolution, leading to the spontaneous volatile characteristics. Moreover, conductance quantization behaviors were also achieved owing to formation and annihilation of atomic scale metal filaments in the film matrix. Our results illustrate that the Ag/ZrO{sub 2}/Pt device with superior TS performances is a promising candidate for selector applications in passive crossbar arrays.

  4. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene ultrathin films

    Directory of Open Access Journals (Sweden)

    ChangLi Liu

    2016-05-01

    Full Text Available The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene (P(VDF-TrFE films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene:poly(styrene sulfonic (PEDOT-PSSH as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  5. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, ChangLi [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China); Wang, XueJun [Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China); Zhang, XiuLi [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China); Du, XiaoLi [School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China); Xu, HaiSheng, E-mail: hsxu@ecust.edu.cn [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Kunshan Hisense Electronics Co., Ltd., Kunshan, Jiangsu 215300 (China)

    2016-05-15

    The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  6. Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance

    Science.gov (United States)

    Kanai, S.; Matsukura, F.; Ohno, H.

    2016-05-01

    We show the electric-field induced magnetization switching for CoFeB/MgO magnetic tunnel junctions with thick MgO barrier layer of 2.8 nm, whose resistance-area product is 176 kΩ μm2, and achieve the small switching energy of 6.3 fJ/bit. The increase of the junction resistance is expected to suppress the energy consumption due to the Joule heating during the switching; however, the energy is still dominated by the Joule energy rather than the charging energy. This is because the junction resistance decreases more rapidly for junctions with thicker MgO as bias voltage increases.

  7. Engineering incremental resistive switching in TaOx based memristors for brain-inspired computing

    Science.gov (United States)

    Wang, Zongwei; Yin, Minghui; Zhang, Teng; Cai, Yimao; Wang, Yangyuan; Yang, Yuchao; Huang, Ru

    2016-07-01

    Brain-inspired neuromorphic computing is expected to revolutionize the architecture of conventional digital computers and lead to a new generation of powerful computing paradigms, where memristors with analog resistive switching are considered to be potential solutions for synapses. Here we propose and demonstrate a novel approach to engineering the analog switching linearity in TaOx based memristors, that is, by homogenizing the filament growth/dissolution rate via the introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. This has effectively mitigated the commonly observed two-regime conductance modulation behavior and led to more uniform filament growth (dissolution) dynamics with time, therefore significantly improving the conductance modulation linearity that is desirable in neuromorphic systems. In addition, the introduction of the DLL also served to reduce the power consumption of the memristor, and important synaptic learning rules in biological brains such as spike timing dependent plasticity were successfully implemented using these optimized devices. This study could provide general implications for continued optimizations of memristor performance for neuromorphic applications, by carefully tuning the dynamics involved in filament growth and dissolution.Brain-inspired neuromorphic computing is expected to revolutionize the architecture of conventional digital computers and lead to a new generation of powerful computing paradigms, where memristors with analog resistive switching are considered to be potential solutions for synapses. Here we propose and demonstrate a novel approach to engineering the analog switching linearity in TaOx based memristors, that is, by homogenizing the filament growth/dissolution rate via the introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. This has effectively mitigated the commonly observed two-regime conductance modulation behavior and led to more uniform filament

  8. Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials

    Science.gov (United States)

    Lee, Myung-Won; Pearson, Christopher; Moon, Tae Jung; Fisher, Alison L.; Petty, Michael C.

    2014-12-01

    We report on the effects of device processing conditions, and of changing the electrode materials, on the switching and negative differential resistance (NDR) behaviour of metal/organic thin film/metal structures. The organic material was an ambipolar molecule containing both electron transporting (oxadiazole) and hole transporting (carbazole) chemical groups. Switching and NDR effects are observed for device architectures with both electrodes consisting of aluminium; optimized switching behaviour is achieved for structures incorporating gold nanoparticles. If one of the Al electrodes is replaced by a higher work function metal or coated with an electron-blocking layer, switching and NDR are no longer observed. The results are consistent with a model based on the creation and destruction of Al filaments within the thin organic layer.

  9. Cost-effectiveness of HIV drug resistance testing to inform switching to second line antiretroviral therapy in low income settings

    DEFF Research Database (Denmark)

    Phillips, Andrew; Cambiano, Valentina; Nakagawa, Fumiyo

    2014-01-01

    BACKGROUND: To guide future need for cheap resistance tests for use in low income settings, we assessed cost-effectiveness of drug resistance testing as part of monitoring of people on first line ART - with switching from first to second line ART being conditional on NNRTI drug resistance mutations...... being identified. METHODS: An individual level simulation model of HIV transmission, progression and the effect of ART which accounts for adherence and resistance development was used to compare outcomes of various potential monitoring strategies in a typical low income setting in sub-Saharan Africa...... outcomes were assessed over 2015-2025 in terms of viral suppression, first line failure, switching to second line regimen, death, HIV incidence, disability-adjusted-life-years averted and costs. Potential future low costs of resistance tests ($30) were used. RESULTS: The most effective strategy, in terms...

  10. Photo-Induced Multiple-State Memory Behaviour in Non-Volatile Bipolar Resistive-Switching Devices.

    Science.gov (United States)

    Zhang, Xuejiao; Xu, Zhiwei; Sun, Bai; Liu, Jianjun; Cao, Yanyan; Qiao, Haixia; Huang, Yong; Pang, Xiaofeng

    2018-04-01

    The recent discovery of non-volatile resistive-switching memory is a promising phenomenon for the semiconductor industry and electronic device technology. In our work, CaWO4 nanoparticles were synthesised through a one-step hydrothermal reaction. A resistive-switching memory device with Ag/CaWO4/fluorine-doped tin oxide structure was prepared. This device presents photo-induced multiple-state memory behaviour at room temperature. This study is valuable for exploring multi-functional materials and their applications in photo-controlled multiple-state non-volatile memories.

  11. Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex: Mechanism and non-volatile memory application

    International Nuclear Information System (INIS)

    Wang Ying; Yang Ting; Xie Ji-Peng; Lü Wen-Li; Fan Guo-Ying; Liu Su

    2013-01-01

    Stable and persistent bipolar resistive switching was observed in an organic diode with the structure of indium-tin oxide (ITO)/bis(8-hydroxyquinoline) cadmium (Cdq 2 )/Al. Aggregate formation and electric field driven trapping and de-trapping of charge carriers in the aggregate states that lie in the energy gap of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the organic molecule were proposed as the mechanism of the observed bipolar resistive switching, and this was solidly supported by the results of AFM investigations. Repeatedly set, read, and reset measurements demonstrated that the device is potentially applicable in non-volatile memories

  12. Coexistence of electric field controlled ferromagnetism and resistive switching for TiO{sub 2} film at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Shaoqing; Qin, Hongwei; Bu, Jianpei; Zhu, Gengchang; Xie, Jihao; Hu, Jifan, E-mail: hujf@sdu.edu.cn, E-mail: hu-jf@vip.163.com [School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100 (China)

    2015-08-10

    The Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device exhibits the coexistence of electric field controlled ferromagnetism and resistive switching at room temperature. The bipolar resistive switching in Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device may be dominated by the modulation of Schottky-like barrier with the electron injection-trapped/detrapped process at the interface of TiO{sub 2}/Nb:SrTiO{sub 3}. We suggest that the electric field-induced magnetization modulation originates mainly from the creation/annihilation of lots of oxygen vacancies in TiO{sub 2}.

  13. Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

    Science.gov (United States)

    Pan, Chengbin; Miranda, Enrique; Villena, Marco A.; Xiao, Na; Jing, Xu; Xie, Xiaoming; Wu, Tianru; Hui, Fei; Shi, Yuanyuan; Lanza, Mario

    2017-06-01

    Despite the enormous interest raised by graphene and related materials, recent global concern about their real usefulness in industry has raised, as there is a preoccupying lack of 2D materials based electronic devices in the market. Moreover, analytical tools capable of describing and predicting the behavior of the devices (which are necessary before facing mass production) are very scarce. In this work we synthesize a resistive random access memory (RRAM) using graphene/hexagonal-boron-nitride/graphene (G/h-BN/G) van der Waals structures, and we develop a compact model that accurately describes its functioning. The devices were fabricated using scalable methods (i.e. CVD for material growth and shadow mask for electrode patterning), and they show reproducible resistive switching (RS). The measured characteristics during the forming, set and reset processes were fitted using the model developed. The model is based on the nonlinear Landauer approach for mesoscopic conductors, in this case atomic-sized filaments formed within the 2D materials system. Besides providing excellent overall fitting results (which have been corroborated in log-log, log-linear and linear-linear plots), the model is able to explain the dispersion of the data obtained from cycle-to-cycle in terms of the particular features of the filamentary paths, mainly their confinement potential barrier height.

  14. Resistive switching properties and low resistance state relaxation in Al/Pr0.7Ca0.3MnO3/Pt junctions

    International Nuclear Information System (INIS)

    Li Songlin; Liao, Z L; Li, J; Gang, J L; Zheng, D N

    2009-01-01

    Metal/insulator/metal structures composed of active Al top electrodes (TEs) and oxygen-deficient Pr 0.7 Ca 0.3 MnO 3 (PCMO) insulator layers are prepared on platinized silicon substrates. The junction resistance exhibits an obvious negative differential resistance region in the first bias sweep and an irreversible increase from 2 to 100 MΩ in repeated ±4 V sweeps. The pulse duration needed to fully switch the junctions is found to be on the order of milliseconds. When 100-500 μs negative pulses are used, the junctions show an incomplete switch to the low resistance state (LRS) which exhibits fluctuating resistances. The fluctuation in the LRS is suppressed and the high-to-low resistance ratio increases gradually when the negative pulse duration is increased from 100 to 500 μs. For relaxed junctions, pulse switching experiments reveal that the LRS undergoes a dynamically stable process at the beginning and then reaches a lower and metastable resistance value. Resistance retention tests also indicate that the high resistance state is very stable, while the metastable LRS gradually relaxes to higher resistance values. The experimental results are discussed with the formation and dissociation of an interfacial AlO x layer at the interface between Al TEs and PCMO layers.

  15. Investigation of the electroforming and resistive switching mechanisms in Fe-doped SrTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Menke, Tobias

    2009-11-27

    To overcome the physical limits of todays memory technologies new concepts are needed. The resistive random access memory (RRAM), which bases on a nonvolatile and repeatable change of the resistance by external electrical stimuli, seems to be one promising candidate. Within the scope of this work, the model system Strontium titanate (SrTiO{sub 3}) has been investigated to get a deeper understanding of the underlying physical mechanism related to the resistance change. The electrical properties of SrTiO{sub 3} (STO) can be modulated from a band insulator to metallic conduction by a self-doping with oxygen vacancies which act as shallow donors. A local accumulation or depletion of oxygen vacancies at the vicinity of the surface will lead to a local redox process which is responsible for the resistance change. To study the influence of the interfaces on the switching properties of SrTiO{sub 3} thin films, epitaxial films of Fe-doped SrTiO{sub 3} were grown on different bottom electrodes (SrRuO{sub 3}, LaNiO{sub 3} und Nb:STO) by a ''Pulsed Laser Deposition'' technique. An atomic force microscope equipped with a conductive tip (LC-AFM) allowed studying the conductivity of the deposited films on the nanometer scale. Resistive switching of lateral structures smaller than {proportional_to}5 nm could be realized which represents the potential of this material for a further downscaling of RRAM devices. The deposition of top electrodes, made of Platinum or Titanium, allowed the electrical characterization of metal-insulator-metal (MIM) structures. An extensive investigation of pristine MIM-devices by impedance spectroscopy showed the big impact of the metal-insulator interface on the overall device resistance. Furthermore, a chemical polarization was studied by dynamical current sweeps and identified as a volatile resistance variation. Usually a forming procedure is needed to ''enable'' the resistive switching properties in MIM devices

  16. Investigation of the electroforming and resistive switching mechanisms in Fe-doped SrTiO3 thin films

    International Nuclear Information System (INIS)

    Menke, Tobias

    2009-01-01

    To overcome the physical limits of todays memory technologies new concepts are needed. The resistive random access memory (RRAM), which bases on a nonvolatile and repeatable change of the resistance by external electrical stimuli, seems to be one promising candidate. Within the scope of this work, the model system Strontium titanate (SrTiO 3 ) has been investigated to get a deeper understanding of the underlying physical mechanism related to the resistance change. The electrical properties of SrTiO 3 (STO) can be modulated from a band insulator to metallic conduction by a self-doping with oxygen vacancies which act as shallow donors. A local accumulation or depletion of oxygen vacancies at the vicinity of the surface will lead to a local redox process which is responsible for the resistance change. To study the influence of the interfaces on the switching properties of SrTiO 3 thin films, epitaxial films of Fe-doped SrTiO 3 were grown on different bottom electrodes (SrRuO 3 , LaNiO 3 und Nb:STO) by a ''Pulsed Laser Deposition'' technique. An atomic force microscope equipped with a conductive tip (LC-AFM) allowed studying the conductivity of the deposited films on the nanometer scale. Resistive switching of lateral structures smaller than ∝5 nm could be realized which represents the potential of this material for a further downscaling of RRAM devices. The deposition of top electrodes, made of Platinum or Titanium, allowed the electrical characterization of metal-insulator-metal (MIM) structures. An extensive investigation of pristine MIM-devices by impedance spectroscopy showed the big impact of the metal-insulator interface on the overall device resistance. Furthermore, a chemical polarization was studied by dynamical current sweeps and identified as a volatile resistance variation. Usually a forming procedure is needed to ''enable'' the resistive switching properties in MIM devices. The electroforming of these devices was extensively studied and could be

  17. Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

    Science.gov (United States)

    Pi-Ho Hu, Vita; Chiu, Pin-Chieh

    2018-04-01

    The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (‑82.9%) than at V dd = 0.86 V (‑9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

  18. Switching from tenofovir and nucleoside analogue therapy to tenofovir monotherapy in virologically suppressed chronic hepatitis B patients with antiviral resistance.

    Science.gov (United States)

    Kim, Dong Yun; Lee, Hye Won; Song, Jeong Eun; Kim, Beom Kyung; Kim, Seung Up; Kim, Do Young; Ahn, Sang Hoon; Han, Kwang-Hyub; Park, Jun Yong

    2018-03-01

    It is unclear whether chronic hepatitis B (CHB) patients with antiviral resistance, who achieve a complete virologic response (CVR) with tenofovir disoproxil fumarate (TDF) and nucleoside analogue (NUC) combination therapy, maintain CVR if switched to TDF monotherapy. We investigated the persistence of CVR after cessation of NUC in virologically suppressed antiviral resistant CHB patients using TDF+NUC combination therapy. This study recruited 76 antiviral-resistant CHB patients showing CVR on TDF+entecavir (ETV) (n = 52), TDF+lamivudine (LAM; n = 14), and TDF+telbivudine (LdT; n = 10) combination therapy, who were switched to TDF monotherapy as step-down therapy. At baseline, 47 patients were male and the median age was 53.0 years (range: 30-78 years); 72.3% cases were hepatitis B e antigen-positive (HBeAg+) and 23.7% were of liver cirrhosis. The median duration of TDF+NUC combination therapy was 20.8 months (range: 3-46 months). At a median follow-up of 24.7 months (range: 12-48 months) after switching to TDF monotherapy, all 76 patients maintained CVR, regardless of the duration of combination therapy and the type of prior NUC and antiviral resistance. Renal dysfunction was not observed during the treatment period. The step-down strategy of switching from TDF+NUC combination therapy to TDF monotherapy in virologically suppressed CHB patients with antiviral resistance should be considered. © 2017 Wiley Periodicals, Inc.

  19. Research on the electromagnetic radiation characteristics of the gas main switch of a capacitive intense electron-beam accelerator

    Science.gov (United States)

    Qiu, Yongfeng; Liu, Jinliang; Yang, Jianhua; Cheng, Xinbing; Li, Guolin

    2017-11-01

    Strong electromagnetic fields are radiated during the operation of the intense electron-beam accelerator (IEBA), which may lead to the nearby electronic devices out of order. In this paper, the research on the electromagnetic radiation characteristic of the gas main switch of a capacitive IEBA is carried out by the methods of theory analysis and experiment investigation. It is obtained that the gas main switch is the dominating radiation resource. In the absence of electromagnetic shielding for the gas main switch, when the pulse forming line of the IEBA is charged to 700 kV, the radiation field with amplitude of 3280 V/m, dominant frequency of 84 MHz and high frequency 100 MHz is obtained at a distance of 10 meters away from the gas main switch. The experimental results of the radiation field agree with the theoretical calculations. We analyze the achievements of several research groups and find that there is a relationship between the rise time (T) of the transient current of the gas main switch and the dominant frequency (F) of the radiation field, namely, F*T=1. Contrast experiment is carried out with a metal shield cover for the gas main switch. Experimental results show that for the shielded setup the radiation field reduces to 115 V/m, the dominant frequency increases to 86.5 MHz at a distance of 10 away meters from the gas main switch. These conclusions are beneficial for further research on the electromagnetic radiation and protection of the IEBA.

  20. Coupling Resistive Switching Devices with Neurons: State of the Art and Perspectives.

    Science.gov (United States)

    Chiolerio, Alessandro; Chiappalone, Michela; Ariano, Paolo; Bocchini, Sergio

    2017-01-01

    Here we provide the state-of-the-art of bioelectronic interfacing between biological neuronal systems and artificial components, focusing the attention on the potentiality offered by intrinsically neuromorphic synthetic devices based on Resistive Switching (RS). Neuromorphic engineering is outside the scopes of this Perspective. Instead, our focus is on those materials and devices featuring genuine physical effects that could be sought as non-linearity, plasticity, excitation, and extinction which could be directly and more naturally coupled with living biological systems. In view of important applications, such as prosthetics and future life augmentation, a cybernetic parallelism is traced, between biological and artificial systems. We will discuss how such intrinsic features could reduce the complexity of conditioning networks for a more natural direct connection between biological and synthetic worlds. Putting together living systems with RS devices could represent a feasible though innovative perspective for the future of bionics.

  1. The observation of valence band change on resistive switching of epitaxial Pr0.7Ca0.3MnO3 film using removable liquid electrode

    Science.gov (United States)

    Lee, Hong-Sub; Park, Hyung-Ho

    2015-12-01

    The resistive switching (RS) phenomenon in transition metal oxides (TMOs) has received a great deal of attention for non-volatile memory applications. Various RS mechanisms have been suggested as to explain the observed RS characteristics. Many reports suggest that changes of interface and the role of oxygen vacancies originate in RS phenomena; therefore, in this study, we use a liquid drop of mercury as the top electrode (TE), epitaxial Pr0.7Ca0.3MnO3 (PCMO) (110) film of the perovskite manganite family for RS material, and an Nb-doped (0.7 at. %) SrTiO3 (100) single crystal as the substrate to observe changes in the interface between the TE and TMOs. The use of removable liquid electrode Hg drop as TE not only enables observation of the RS characteristic as a bipolar RS curve (counterclockwise) but also facilitates analysis of the valence band of the PCMO surface after resistive switching via photoelectron spectroscopy. The observed I-V behaviors of the low and high resistance states (HRS) are explained with an electrochemical migration model in PCMO film where accumulated oxygen vacancies at the interface between the Hg TE and PCMO (110) surface induce the HRS. The interpreted RS mechanism is directly confirmed via valence band spectrum analysis.

  2. Facile Synthesis of Co9Se8Quantum Dots as Charge Traps for Flexible Organic Resistive Switching Memory Device.

    Science.gov (United States)

    Zhang, Peng; Xu, Benhua; Gao, Cunxu; Chen, Guilin; Gao, Meizhen

    2016-11-09

    Uniform Co 9 Se 8 quantum dots (CSQDs) were successfully synthesized through a facile solvothermal method. The obtained CSQDs with average size of 3.2 ± 0.1 nm and thickness of 1.8 ± 0.2 nm were demonstrated good stability and strong fluorescence under UV light after being easily dispersed in both of N,N-dimethylformamide (DMF) and deionized water. We demonstrated the flexible resistive switching memory device based on the hybridization of CSQDs and polyvinylpyrrolidone (PVP) (CSQDs-PVP). The device with the Al/CSQDs-PVP/Pt/poly(ethylene terephthalate) (PET) structure represented excellent switching parameters such as high ON/OFF current ratio, low operating voltages, good stability, and flexibility. The flexible resistive switching memory device based on hybridization of CSQDs and PVP has a great potential to be used in flexible and high-performance memory applications.

  3. Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

    Science.gov (United States)

    Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Gul, Jahan Zeb; Kim, Soo-Wan; Lim, Jong Hwan; Choi, Kyung Hyun

    2016-11-01

    Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105 sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device.

  4. Interface-dependent resistance switching in Nd0⋅ 7 Sr0⋅ 3 MnO3 ...

    Indian Academy of Sciences (India)

    Interface-dependent electric-pulse-induced resistance switching effect (EPIR) in Nd0.7Sr0.3MnO3 ceramics was studied. ... Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062, P.R. China; State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao ...

  5. Resistive switching phenomena of extended defects in Nb-doped SrTiO3 under influence of external gradients

    International Nuclear Information System (INIS)

    Rodenbuecher, Christian

    2014-01-01

    Redox-based memristive materials have attracted much attention in the last decade owing to their ability to change the resistance upon application of an electric field making them promising candidates for future non-volatile memories. However, a fundamental understanding of the nature of the resistive switching effect, which is indispensable for designing future technological applications,is still lacking. As a prototype material of a memristive oxide, strontium titanate (SrTiO 3 ) has been investigated intensively and it was revealed that the valence change of a Ti ''d'' electron plays an important role during resistive switching related to insulator-to-metal transition. Such a transition can be induced by electrical gradients, by chemical gradients, by a combination of these gradients or by donor doping. Hence, SrTiO 3 doped with the donor Nb should have metallic properties and is used commonly as a conducting substrate for the growth of functional oxide thin films. Nevertheless,the resistive switching effect has also be observed in Nb-doped SrTiO 3 . This paradoxical situation offers a unique opportunity to gain an insight into the processes during the insulator-to metal transition. In this thesis, a comprehensive study of the influence of external gradients on SrTiO 3 :Nb single crystals is presented. The focus is especially set on the investigation of the crystallographic structure, the chemical composition, the electronic structure, the lattice dynamics and the electronic transport phenomena using surface-sensitive methods on the macro- and nanoscale. On the as-received epi-polished single crystals, the evolution of a surface layer having a slight excess of strontium and - in contrast to the bulk of the material - semiconducting properties are observed. Hence, the key for understanding of the resistive switching effect is the knowledge of the nature of the surface layer. On the basis of systematic studies of the influence of external

  6. Radiation-resistant characteristics of epoxyresins

    International Nuclear Information System (INIS)

    Saito, Toshio; Seguchi, Tadao.

    1985-01-01

    For the evaluation of radiation resistivity under the condition of low level irradiation in the atmospheric environment, oxidation and deterioration of several kinds of epoxy resins were examined by the acceleration method with 2.7 kGy/h, 2 MGy of 60 Co-γ irradiation and 3 MPa of oxygen pressure, and with 0.88 kGy/h, 2 MGy of irradiation and 4 MPa of oxygen pressure, to simulate 18 Gy/h, 12 years and 4.5 Gy/h, 50 years of atmospheric deterioration respectively. Bending strength emitted gas component, diffusion and solubility coefficients, oxidized layer thickness, gel fraction and dynamic visco-elasticity were determined for the irradiated epoxy resins. As for the radiation resistivity, epoxy resins of acid anhydride hardening agent showed superior quality to those of amine-type hardening agent, and the former showed no deterioration enen after irradiation in vacuum. From the above-mentioned understandings and also from data of exhausted gas analysis, gel fraction determination and visco-elasticity testing, it was clarified that the radiation resistivity of main components of epoxy resins were superior for Epikote 828, ether radical, tertiary amine to ester radical followed by hydroxyl radical. It was also clarified that heat resitivity was significantly lowered in the deteriorated resins and that thickness of oxidized layer was decreased with radiation dose. It was concluded that radiation resistivity of epoxy resins depended on their hardening agent significantly. (Takagi, S.)

  7. Ab initio study of ceria films for resistive switching memory applications

    Science.gov (United States)

    Firdos, Mehreen; Hussain, Fayyaz; Imran, Muhammad; Ismail, Muhammad; Rana, A. M.; Arshad Javid, M.; Majid, Abdul; Arif Khalil, R. M.; Ullah, Hafeez

    2017-10-01

    The aim of this study is to investigate the charge distribution/relocation activities in relation to resistive switching (RS) memory behavior in the metal/insulator/metal (MIM) structure of Zr/CeO2/Pt hybrid layers. The Zr layer is truly expected to act not only as an oxygen ion extraction layer but also as an ion barrier by forming a ZrO2 interfacial layer. Such behavior of the Zr not only introduces a high concentration of oxygen vacancies to the active CeO2 layer but also enhances the resistance change capability. Such Zr contributions have been explored by determining the work function, charge distribution and electronic properties with the help of density functional theory (DFT) based on the generalized gradient approximation (GGA). In doped CeO2, the dopant (Zr) plays a significant role in the formation of defect states, such as oxygen vacancies, which are necessary for generating conducting filaments. The total density of state (DOS) analyses reveal that the existence of impurity states in the hybrid system considerably upgrade the performance of charge transfer/accumulation, consequently leading to enhanced RS behavior, as noticed in our earlier experimental results on Zr/CeO2/Pt devices. Hence it can be concluded that the present DFT studies can be implemented on CeO2-based RRAM devices, which have skyscraping potential for future nonvolatile memory (NVM) applications.

  8. Intrinsic SiO{sub x}-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Yao-Feng, E-mail: yfchang@utexas.edu; Chen, Ying-Chen; Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Zhou, Fei; Lee, Jack C. [Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758 (United States); Fowler, Burt [PrivaTran, LLC, 1250 Capital of Texas Highway South, Bldg 3, Ste 400, Austin, Texas 78746 (United States)

    2014-07-28

    Multilevel programing and charge transport characteristics of intrinsic SiO{sub x}-based resistive switching memory are investigated using TaN/SiO{sub x}/n{sup ++}Si (MIS) and TiW/SiO{sub x}/TiW (MIM) device structures. Current transport characteristics of high- and low-resistance states (HRS and LRS) are studied in both device structures during multilevel operation. Analysis of device thermal response demonstrates that the effective electron energy barrier is strongly dependent on the resistance of the programed state, with estimates of 0.1 eV in the LRS and 0.6 eV in the HRS. Linear data fitting and conductance analyses indicate Poole-Frenkel emission or hopping conductance in the low-voltage region, whereas Fowler-Nordheim (F-N) or trap-assisted tunneling (TAT) is indicated at moderate voltage. Characterizations using hopping transport lead to hopping distance estimates of ∼1 nm in the LRS for both device structures. Relative permittivity values (ε{sub r}) were extracted using the Poole-Frenkel formulism and estimates of local filament temperature, where ε{sub r} values were ∼80 in the LRS and ∼4 in the HRS, suggesting a strongly polarized medium in the LRS. The onset of F-N tunneling or TAT corresponds to an observed “overshoot” in the I-V response with an estimated threshold of 1.6 ± 0.2 V, in good agreement with reported electro-luminescence results for LRS devices. Resistive switching is discussed in terms of electrochemical reactions between common SiO{sub 2} defects, and specific defect energy levels are assigned to the dominant transitions in the I-V response. The overshoot response in the LRS is consistent with TAT through either the Eγ' oxygen vacancy or the hydrogen bridge defect, both of which are reported to have an effective bandgap of 1.7 eV. The SET threshold at ∼2.5 V is modeled as hydrogen release from the (Si-H){sub 2} defect to generate the hydrogen bridge, and the RESET transition is modeled as an

  9. Switching EKF technique for rotor and stator resistance estimation in speed sensorless control of IMs

    Energy Technology Data Exchange (ETDEWEB)

    Barut, Murat; Bogosyan, Seta [University of Alaska Fairbanks, Department of Electrical and Computer Engineering, Fairbanks, AK 99775 (United States); Gokasan, Metin [Istanbul Technical University, Electrical and Electronic Engineering Faculty, 34390 Istanbul (Turkey)

    2007-12-15

    High performance speed sensorless control of induction motors (IMs) calls for estimation and control schemes that offer solutions to parameter uncertainties as well as to difficulties involved with accurate flux/velocity estimation at very low and zero speed. In this study, a new EKF based estimation algorithm is proposed for the solution of both problems and is applied in combination with speed sensorless direct vector control (DVC). The technique is based on the consecutive execution of two EKF algorithms, by switching from one algorithm to another at every n sampling periods. The number of sampling periods, n, is determined based on the desired system performance. The switching EKF approach, thus applied, provides an accurate estimation of an increased number of parameters than would be possible with a single EKF algorithm. The simultaneous and accurate estimation of rotor, R{sub r}{sup '} and stator, R{sub s} resistances, both in the transient and steady state, is an important challenge in speed sensorless IM control and reported studies achieving satisfactory results are few, if any. With the proposed technique in this study, the sensorless estimation of R{sub r}{sup '} and R{sub s} is achieved in transient and steady state and in both high and low speed operation while also estimating the unknown load torque, velocity, flux and current components. The performance demonstrated by the simulation results at zero speed, as well as at low and high speed operation is very promising when compared with individual EKF algorithms performing either R{sub r}{sup '} or R{sub s} estimation or with the few other approaches taken in past studies, which require either signal injection and/or a change of algorithms based on the speed range. The results also motivate utilization of the technique for multiple parameter estimation in a variety of control methods. (author)

  10. Radiation resistant characteristics of optical fibers

    International Nuclear Information System (INIS)

    Nakasuji, Masaaki; Tanaka, Gotaro; Watanabe, Minoru; Kyodo, Tomohisa; Mukunashi, Hiroaki

    1983-01-01

    It is required to develop the optical fibers with good radiation resistivity because the fibers cause the increase of transmission loss due to glass colouring when they are used under the presence of radiation such as γ-ray. Generally, it is known that SI (step index) fibers are more resistive to radiation than GI (graded index) fibers. However, since a wide band can not be obtained with SI fibers, the development of radiation resistive GI optical fibers is desirable. In this report, the production for trial of the GI fibers of fluorine-doped silica core, the examination of radiation effect on their optical transmission loss by exposing them to γ-ray, thermal and fast neutron beams and also of mechanical strength are described. The GI fibers of fluorine-doped silica core show better radiation resistivity than Ge-doped ones. The B- and F-doped GI fibers show small increase of loss due to γ-ray, but large increase of loss due to thermal neutron beam. This is supposed to be caused by the far greater neutron absorption cross-section of boron than that of other elements. Significant increase of loss was not recognized when 14 MeV fast neutrons (8.6 x 10 4 n/cm 2 .s) were applied by 1.8 x 10 9 n/cm 2 . It was found that ETFE-covered fiber cores generated fluorine-containing gas due to γ irradiation, and the strength was remarkably lowered, but the lowering of strength can be prevented by adding titanium-white to the covering material. (Wakatsuki, Y.)

  11. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James

    2017-01-02

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  12. Self-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin film

    Science.gov (United States)

    Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Y. F.; Yu, Q.; Li, P.; Fung, S.

    2011-12-01

    The resistive switching device based on a Ni-rich nickel oxide thin film exhibits an inherent learning ability of a neural network. The device has the short-term-memory and long-term-memory functions analogous to those of the human brain, depending on the history of its experience of voltage pulsing or sweeping. Neuroplasticity could be realized with the device, as the device can be switched from a high-resistance state to a low-resistance state due to the formation of stable filaments by a series of electrical pulses, resembling the changes such as the growth of new connections and the creation of new neurons in the brain in response to experience.

  13. Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3 thin films

    Science.gov (United States)

    Lu, Zeng-Xing; Song, Xiao; Zhao, Li-Na; Li, Zhong-Wen; Lin, Yuan-Bin; Zeng, Min; Zhang, Zhang; Lu, Xu-Bing; Wu, Su-Juan; Gao, Xing-Sen; Yan, Zhi-Bo; Liu, Jun-Ming

    2015-10-01

    We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current-voltage (I-V) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures (originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures (> 253 K), the I-V behaviors are governed by both space-charge-limited conduction (SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of > 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272078 and 51332007), the State Key Program for Basic Research of China (Grant No 2015CB921202), the Guangdong Provincial Universities and Colleges Pearl River Scholar Funded Scheme, China (2014), the International Science & Technology Cooperation Platform Program of Guangzhou, China (Grant No. 2014J4500016), and the Program for Changjiang Scholars and Innovative Research Team in University of China (Grant No. IRT1243).

  14. Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Daniel A.A., E-mail: danielandrade.ufs@gmail.com [Department of Physics, Federal University of Sergipe, São Cristóvão 49100-000 (Brazil); Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY 14260 (United States); Zeng, Hao [Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY 14260 (United States); Macêdo, Marcelo A. [Department of Physics, Federal University of Sergipe, São Cristóvão 49100-000 (Brazil)

    2015-06-15

    Highlights: • A purely bipolar behavior on a Co-doped ZnO thin film has been demonstrated. • We have shown what can happen if a unipolar test is performed in a purely bipolar device. • An explanation for how a sample can show a purely bipolar switching behavior was suggested. • An important open issue about resistive switching effect was put in debate. - Abstract: In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using a shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior.

  15. First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3 superlattice

    Science.gov (United States)

    Shirakawa, Hiroki; Araidai, Masaaki; Shiraishi, Kenji

    2018-04-01

    The interfacial phase change memory (iPCM) based on a GeTe/Sb2Te3 superlattice is one of the candidates for future storage class memories. However, the atomic structures of the high and low resistance states (HRS/LRS) remain unclear and the resistive switching mechanism is still under debate. Clarifying the switching mechanism is essential for developing further high-reliability and low-power-consumption iPCM. We propose, on the basis of the results of first-principles molecular dynamics simulations, a mechanism for resistive switching, and describe the atomic structures of the high and low resistance states of iPCM for unipolar switching. Our simulations indicated that switching from HRS to LRS occurs with Joule heating only, while that from LRS to HRS occurs with both hole injection and Joule heating.

  16. Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

    Directory of Open Access Journals (Sweden)

    Joel Molina-Reyes

    2017-01-01

    Full Text Available We present the resistive switching characteristics of Metal-Insulator-Metal (MIM devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD. A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis, the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions which leaves some residuals and (b thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

  17. Nonlinear switching in Al/Li:NiO/ITO forming-free resistive memories caused by interfacial layer

    Science.gov (United States)

    Yuan, Xin-Cai; Wei, Xian-Hua; Dai, Bo; Zeng, Hui-Zhong

    2016-01-01

    Nonlinear bipolar resistive switching (BRS) of Al/NiO/ITO without forming is demonstrated in this paper. Compared with the linear BRS needing forming, the forming-free nonlinear BRS can be operated using a smaller current about two orders at a smaller switching voltage in the same device. Different from the Joule heating mechanism of the linear BRS behavior after forming, the conduction of the nonlinear BRS is dominated by oxygen vacancy drift induced by electric field across the interface between metal Al, NiO film, and conducting ITO, in which Al/NiO interfacial layer and ITO act as a dual-oxygen reservoir. Furthermore, the doping of Li into NiO layer improves switching properties such as the ON/OFF ratio and reproducibility due to the increase of oxygen vacancy. The results imply that forming-free nonlinear BRS of binary oxides caused by interface layer is feasible in similar dual-oxygen reservoir structure.

  18. Characteristics of the magnetic flux-offset type FCL by switching component

    International Nuclear Information System (INIS)

    Jung, Byung Ik; Choi, Hyo Sang

    2016-01-01

    The study of superconducting fault current limiter (SFCL) is continuously being studied as a countermeasure for reducing fault-current in the power system. When the fault occurred in the power system, the fault-current was limited by the generated impedance of SFCLs. The operational characteristics of the flux-offset type SFCL according to turn ratios between the primary and the secondary winding of a reactor were compared in this study. We connected the secondary core to a superconductor and a SCR switch in series in the suggested structure. The fault current in the primary and the secondary winding of the reactor and the voltage of the superconductor on the secondary were measured and compared. The results showed that the fault current in the load line was the lowest and the voltage applied at both ends of the superconductor was also low when the secondary winding of the reactor had lower turn ratio than the primary. It was confirmed based on these results that the turn ratio of the secondary winding of the reactor must be designed to be lower than that of the primary winding to reduce the burden of the superconductor and to lower the fault current. Also, the suggested structure could increase the duration of the limited current by limiting the continuous current after the first half cycle from the fault with the fault current limiter

  19. Characteristics of patients with Alzheimer’s disease who switch to rivastigmine transdermal patches in routine clinical practice

    Directory of Open Access Journals (Sweden)

    López-Pousa S

    2013-01-01

    Full Text Available Secundino López-Pousa,1 Francisco Javier Arranz21Unit for Assessment of Memory and Dementia, Institut d’Assistència Sanitària de Girona, Salt, Girona, 2CNS Area, Medical Department and Health Innovation, Esteve, Barcelona, SpainBackground: The aim of this study was to assess the sociodemographic and clinical characteristics of patients with Alzheimer’s disease who switched from any oral cholinesterase inhibitor to rivastigmine patches.Methods: An observational, retrospective, multicenter study was conducted in patients with a diagnosis of Alzheimer’s disease who had switched to rivastigmine patches within the previous year in the routine clinical practice of 150 neurologists. Sociodemographic, clinical, and therapeutic data were collected in one office visit. Stepwise logistic regression models were used to find associations.Results: Data were obtained from a total of 1022 patients and their caregivers, and showed a mean age of 78.4 ± 6.62 years, 62.61% being women, and mostly having a family caregiver. The switch to rivastigmine patches was mainly instigated on the initiative of the physician (82.39% or on request of the caregiver (21.23% or patient (10.37%. Reasons for the switch included improving ease of administration (56.65%, tolerability (36.79%, efficacy (31.60%, and adherence (18.59%. Prior treatment with oral rivastigmine versus donepezil or galantamine increased the probability of switching in order to improve ease of administration (odds ratio, oral rivastigmine versus donepezil 4.20, P < 0.0001; odds ratio, oral rivastigmine versus galantamine 3.55, P < 0.0001. Conversely, previous treatment with donepezil or galantamine produced an approximate four-fold increase in the odds of switching due to lack of efficacy. A higher level of education as well as more concomitant diseases increased the probability of switching because of intolerance.Conclusion: Improved ease of administration was the main reason for switching to

  20. Research on the electromagnetic radiation characteristics of the gas main switch of a capacitive intense electron-beam accelerator

    Directory of Open Access Journals (Sweden)

    Yongfeng Qiu

    2017-11-01

    Full Text Available Strong electromagnetic fields are radiated during the operation of the intense electron-beam accelerator (IEBA, which may lead to the nearby electronic devices out of order. In this paper, the research on the electromagnetic radiation characteristic of the gas main switch of a capacitive IEBA is carried out by the methods of theory analysis and experiment investigation. It is obtained that the gas main switch is the dominating radiation resource. In the absence of electromagnetic shielding for the gas main switch, when the pulse forming line of the IEBA is charged to 700 kV, the radiation field with amplitude of 3280 V/m, dominant frequency of 84 MHz and high frequency 100 MHz is obtained at a distance of 10 meters away from the gas main switch. The experimental results of the radiation field agree with the theoretical calculations. We analyze the achievements of several research groups and find that there is a relationship between the rise time (T of the transient current of the gas main switch and the dominant frequency (F of the radiation field, namely, F*T=1. Contrast experiment is carried out with a metal shield cover for the gas main switch. Experimental results show that for the shielded setup the radiation field reduces to 115 V/m, the dominant frequency increases to 86.5 MHz at a distance of 10 away meters from the gas main switch. These conclusions are beneficial for further research on the electromagnetic radiation and protection of the IEBA.

  1. Evaluation of the Delivery QoS Characteristics of Gigabit Ethernet Switches

    CERN Document Server

    Beuran, Razvan; Davies, Neil; Dobinson, Robert W

    2004-01-01

    The event selection system for ATLAS is designed to perform real-time image processing on particle collision data equivalent to 2 TB/s. This data is filtered by a multi-level architecture, resulting in 200 GB/s of data analysed by a distributed system consisting of several thousand PCs and switches. As part of our ongoing work on this system, we performed tests on several Gigabit Ethernet switches manufactured by market leaders, using our custom-built test equipment. We analysed the implications of running network devices at, and just beyond, saturation while deploying service differentiation mechanisms. We quantified the quality degradation that traffic flows experienced when passing through switches. We focused on emergent properties in saturation, including fairness and fidelity to expectations. We discuss the ideals for switch behaviour and compare them against the observed behaviour of real implementations of differentiation mechanisms in switches. This creates a generic benchmark, which is independent o...

  2. Highly Uniform Resistive Switching Properties of Solution-Processed Silver-Embedded Gelatin Thin Film.

    Science.gov (United States)

    Chang, Yu-Chi; Lee, Cheng-Jung; Wang, Li-Wen; Wang, Yeong-Her

    2018-02-16

    The silver-embedded gelatin (AgG) thin film produced by the solution method of metal salts dissolved in gelatin is presented. Its simple fabrication method ensures the uniform distribution of Ag dots. Memory devices based on AgG exhibit good device performance, such as the ON/OFF ratio in excess of 10 5 and the coefficient of variation in less of 50%. To further investigate the position of filament formation and the role of each element, current sensing atomic force microscopy (CSAFM) analysis as well as elemental line profiles across the two different conditions in the LRS and HRS are analyzed. The conductive and nonconductive regions in the current map of the CSAFM image show that the conductive filaments occur in the AgG layer around Ag dots. The migration of oxygen ions and the redox reaction of carbon are demonstrated to be the driving mechanism for the resistive switching of AgG memory devices. The results show that dissolving metal salts in gelatin is an effective way to achieve high-performance organic-electronic applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Analysis of dynamic characteristics of SiC Schottky barrier diodes at high switching frequency based on junction capacitance

    Science.gov (United States)

    Maeda, Ryosuke; Okuda, Takafumi; Hikihara, Takashi

    2018-04-01

    In this paper, we focus on relationships between dynamic characteristics and device structures of SiC Schottky barrier diodes (SBDs) to investigate their switching capabilities. A device model based on junction capacitance and thermionic emission theory is proposed. To measure the dynamic characteristics of SiC SBD, a high-frequency (10 MHz) and high-voltage (200 Vpp) wave generator is fabricated. By comparing simulated results with experimental results, it is found that the proposed model can represent the dynamic characteristics at 10 MHz and 200 °C, and the simple device model based on junction capacitance and thermionic emission theory well describes the switching behaviors of SiC SBDs at full operational temperature. The proposed device model is beneficial for designing high-power converters, at both wide temperature and wide frequency ranges.

  4. A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

    Directory of Open Access Journals (Sweden)

    Mario Lanza

    2014-03-01

    Full Text Available Metal-Insulator-Metal (MIM structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM. In these cells, the memory concept is no more based on the charge storage, but on tuning the electrical resistance of the insulating layer by applying electrical stresses to reach a high resistive state (HRS or “0” and a low resistive state (LRS or “1”, which makes the memory point. Some high-k dielectrics show this unusual property and in the last years high-k based RRAM have been extensively analyzed, especially at the device level. However, as resistance switching (in the most promising cells is a local phenomenon that takes place in areas of ~100 nm2, the use of characterization tools with high lateral spatial resolution is necessary. In this paper the status of resistive switching in high-k materials is reviewed from a nanoscale point of view by means of conductive atomic force microscope analyses.

  5. Vorinostat-induced autophagy switches from a death-promoting to a cytoprotective signal to drive acquired resistance.

    Science.gov (United States)

    Dupéré-Richer, D; Kinal, M; Ménasché, V; Nielsen, T H; Del Rincon, S; Pettersson, F; Miller, W H

    2013-02-07

    Histone deacetylase inhibitors (HDACi) have shown promising activity against hematological malignancies in clinical trials and have led to the approval of vorinostat for the treatment of cutaneous T-cell lymphoma. However, de novo or acquired resistance to HDACi therapy is inevitable, and their molecular mechanisms are still unclear. To gain insight into HDACi resistance, we developed vorinostat-resistant clones from the hematological cell lines U937 and SUDHL6. Although cross-resistant to some but not all HDACi, the resistant cell lines exhibit dramatically increased sensitivity toward chloroquine, an inhibitor of autophagy. Consistent with this, resistant cells growing in vorinostat show increased autophagy. Inhibition of autophagy in vorinostat-resistant U937 cells by knockdown of Beclin-1 or Lamp-2 (lysosome-associated membrane protein 2) restores sensitivity to vorinostat. Interestingly, autophagy is also activated in parental U937 cells by de novo treatment with vorinostat. However, in contrast to the resistant cells, inhibition of autophagy decreases sensitivity to vorinostat. These results indicate that autophagy can switch from a proapoptotic signal to a prosurvival function driving acquired resistance. Moreover, inducers of autophagy (such as mammalian target of rapamycin inhibitors) synergize with vorinostat to induce cell death in parental cells, whereas the resistant cells remain insensitive. These data highlight the complexity of the design of combination strategies using modulators of autophagy and HDACi for the treatment of hematological malignancies.

  6. Mechanisms of charge transport and resistive switching in composite films of semiconducting polymers with nanoparticles of graphene and graphene oxide

    Science.gov (United States)

    Berestennikov, A. S.; Aleshin, A. N.

    2017-11-01

    We have investigated the effect of the resistive switching in the composite films based on polyfunctional polymers - PVK, PFD and PVC mixed with particles of Gr and GO with the concentration of ˜ 1 - 3 wt.%. We have developed the solution processed hybrid memory structures based on PVK and GO particles composite films. The effect of the resistive switching in Al/PVK(PFD; PVC):Gr(GO)/ITO/PET structures manifests itself as a sharp change of the electrical resistance from a low-conducting state to a relatively high-conducting state when applying a bias to Al-ITO electrodes of ˜ 0.2-0.4 V. It has been established that a sharp conductivity jump characterized by S-shaped current-voltage curves and the presence of their hysteresis occurs upon applying a voltage pulse to the Au/PVK(PFD; PVC):Gr(GO)/ITO/PET structures, with the switching time in the range from 1 to 30 μs. The mechanism of resistive switching associated with the processes of capture and accumulation of charge carriers by Gr(GO) particles introduced into the matrixes of the PVK polymer due to the reduction/oxidation processes. The possible mechanisms of energy transfer between organic and inorganic components in PVK(PFD; PVC):GO(Gr) films causes increase mobility are discussed. Incorporating of Gr (GO) particles into the polymer matrix is a promising route to enhance the performance of hybrid memory structures, as well as it is an effective medium for memory cells.

  7. Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states.

    Science.gov (United States)

    Cheng, Baochang; Ouyang, Zhiyong; Chen, Chuan; Xiao, Yanhe; Lei, Shuijin

    2013-11-19

    Resistive switching (RS) devices are widely believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, Zn2SnO4-sheathed ZnO core/shell heterostructure nanowires were constructed through a polymeric sol-gel approach followed by post-annealing. The back-to-back bipolar RS properties were observed in the Ohmic contact two-terminal devices based on individual core/shell nanowires. With increasing bias to about 1.5 V, it changes from high-resistance states (HRS) to low-resistance states, and however, it can be restored to HRS by reverse bias. We propose a new mechanism, which is attributed to the injection of electrons into/from interfacial states, arising from the lattice mismatch at ZnO/Zn2SnO4 heterointerface. Upon applying negative/positive voltage at one end of devices, where interfacial states are filled/emptied, barrier will be eliminated/created, resulting into symmetric RS characteristics. The behavior of storage and removal charges demonstrates that the heterostructures have excellent properties for the application in resistance random access memory.

  8. Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states

    Science.gov (United States)

    Cheng, Baochang; Ouyang, Zhiyong; Chen, Chuan; Xiao, Yanhe; Lei, Shuijin

    2013-11-01

    Resistive switching (RS) devices are widely believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, Zn2SnO4-sheathed ZnO core/shell heterostructure nanowires were constructed through a polymeric sol-gel approach followed by post-annealing. The back-to-back bipolar RS properties were observed in the Ohmic contact two-terminal devices based on individual core/shell nanowires. With increasing bias to about 1.5 V, it changes from high-resistance states (HRS) to low-resistance states, and however, it can be restored to HRS by reverse bias. We propose a new mechanism, which is attributed to the injection of electrons into/from interfacial states, arising from the lattice mismatch at ZnO/Zn2SnO4 heterointerface. Upon applying negative/positive voltage at one end of devices, where interfacial states are filled/emptied, barrier will be eliminated/created, resulting into symmetric RS characteristics. The behavior of storage and removal charges demonstrates that the heterostructures have excellent properties for the application in resistance random access memory.

  9. Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

    Science.gov (United States)

    Wu, You-Lin; Liao, Chun-Wei; Ling, Jing-Jenn

    2014-06-01

    The electrical characterization of HfO2/ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO2/ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

  10. Resistive switching of Sn-doped In2O3/HfO2core-shell nanowire: geometry architecture engineering for nonvolatile memory.

    Science.gov (United States)

    Huang, Chi-Hsin; Chang, Wen-Chih; Huang, Jian-Shiou; Lin, Shih-Ming; Chueh, Yu-Lun

    2017-05-25

    Core-shell NWs offer an innovative approach to achieve nanoscale metal-insulator-metal (MIM) heterostructures along the wire radial direction, realizing three-dimensional geometry architecture rather than planar type thin film devices. This work demonstrated the tunable resistive switching characteristics of ITO/HfO 2 core-shell nanowires with controllable shell thicknesses by the atomic layer deposition (ALD) process for the first time. Compared to planar HfO 2 thin film device configuration, ITO/HfO 2 core-shell nanowire shows a prominent resistive memory behavior, including lower power consumption with a smaller SET voltage of ∼0.6 V and better switching voltage uniformity with variations (standard deviation(σ)/mean value (μ)) of V SET and V RESET from 0.38 to 0.14 and from 0.33 to 0.05 for ITO/HfO 2 core-shell nanowire and planar HfO 2 thin film, respectively. In addition, endurance over 10 3 cycles resulting from the local electric field enhancement can be achieved, which is attributed to geometry architecture engineering. The concept of geometry architecture engineering provides a promising strategy to modify the electric-field distribution for solving the non-uniformity issue of future RRAM.

  11. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    Science.gov (United States)

    Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

    2017-12-01

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

  12. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    KAUST Repository

    Shen, Shida

    2017-12-29

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

  13. Dynamic characteristics of the blisk with synchronized switch damping based on negative capacitor

    Science.gov (United States)

    Liu, J.; Li, L.; Huang, X.; Jezequel, L.

    2017-10-01

    In this paper, we propose a method to suppress the vibration of the integral bladed disk ('blisk' for short) in aero-engines using synchronized switch damping based on negative capacitor (SSDNC). Different from the classical piezoelectric shunt damping, SSDNC is a type of nonlinear piezoelectric damping. A multi-harmonic balance method combined with the alternating frequency/time method (MHBM-AFT) is used to predict and further analyze the dynamic characteristics of the electromechanical system, and an arc-length continuation technique is used to improve the convergence of the method. In order to validate the algorithm as well as to recognize the characteristics of the system with SSDNC, a two degree-of-freedom (2-DOF) system with SSDNC is studied at first. The nonlinear complex modal information is calculated and compared with those of the corresponding system with a linear RL shunt circuit. The results indicate that the natural frequencies and modal damping ratio do not change with the modal amplitude, which means that SSDNC has the same modal damping corresponding to different system energy levels. In addition, SSDNC can improve the damping level of all the modes nearly without affecting the natural frequencies of the system. Then, the forced response of the blisk with SSDNC in the frequency domain is calculated and analyzed, including a tuned blisk, which is excited by the traveling wave excitation with a single harmonic and multi-harmonic, and a mistuned blisk, which is excited by traveling wave excitation with a single harmonic and multi-harmonic. We present two advantages of the SSDNC technique when compared with piezoelectric shunt damping. First, SSDNC can suppress the vibration of the blisk under a multi-harmonic wideband the traveling wave, and second, the vibration suppression performance of SSDNC is insensitive to the mistuning of mechanical parameters of the blisk. The results will be of great significance in overcoming the problem of the amplitude

  14. Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

    Science.gov (United States)

    Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

    2018-05-01

    A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

  15. VO2(B conversion to VO2(A and VO2(M and their oxidation resistance and optical switching properties

    Directory of Open Access Journals (Sweden)

    Zhang Yifu

    2016-03-01

    Full Text Available Vanadium dioxide VO2 has been paid in recent years increasing attention because of its various applications, however, its oxidation resistance properties in air atmosphere have rarely been reported. Herein, VO2(B nanobelts were transformed into VO2(A and VO2(M nanobelts by hydrothermal route and calcination treatment, respectively. Then, we comparatively studied the oxidation resistance properties of VO2(B, VO2(A and VO2(M nanobelts in air atmosphere by thermo-gravimetric analysis and differential thermal analysis (TGA/DTA. It was found that the nanobelts had good thermal stability and oxidation resistance below 341 °C, 408 °C and 465 °C in air, respectively, indicating that they were stable in air at room temperature. The fierce oxidation of the nanobelts occurred at 426, 507 and 645 °C, respectively. The results showed that the VO2(M nanobelts had the best thermal stability and oxidation resistance among the others. Furthermore, the phase transition temperatures and optical switching properties of VO2(A and VO2(M were studied by differential scanning calorimetry (DSC and variable temperature infrared spectra. It was found that the VO2(A and VO2(M nanobelts had outstanding thermochromic character and optical switching properties.

  16. Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices.

    Science.gov (United States)

    Gubicza, Agnes; Csontos, Miklós; Halbritter, András; Mihály, György

    2015-03-14

    The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels.

  17. Characteristics of reversed field pinch plasmas with a resistive shell

    International Nuclear Information System (INIS)

    Tamano, T.; Bard, W.D.; Chu, C.

    1987-01-01

    Reversed field pinch plasmas in a resistive shell have been investigated in the OHTE device. Discharges were sustained over 10 ms, much longer than the resistive shell time of 1.5 ms. Global plasma characteristics such as plasma temperature, density, resistance and magnetic fluctuations were very similar to those obtained with the previous highly conducting shell. A new type of toroidally localized kink instability, which we named the ''slinky'' mode, was found. It initially grew with a growth time of approximately the resistive shell time as the linear MHD theories have predicted, but self-healing was usually observed within a few milliseconds. This indicates that a highly conducting shell may not be required for a reversed field pinch, and suggests that linear plasma stability is not always necessary in a confinement system

  18. Experimental investigation on the development characteristics of initial electrons in a gas pressurized closing switch under DC voltage

    Science.gov (United States)

    Rongxiao, ZHAI; Mengtong, QIU; Weixi, LUO; Peitian, CONG; Tao, HUANG; Jiahui, YIN; Tianyang, ZHANG

    2018-04-01

    As one of the most important elements in linear transformer driver (LTD) based systems, the gas pressurized closing switches are required to operate with a very low prefire probability during the DC-charging process to ensure reliable operation and stable output of the whole pulsed power system. The most direct and effective way to control the prefire probability is to select a suitable working coefficient. The study of the development characteristics of the initially generated electrons is useful for optimizing the working coefficient and improving the prefire characteristic of the switches. In this paper an ultraviolet pulsed laser is used to generate initial electrons inside the gap volume. A current measuring system is used to measure the time-dependent current generated by the growth of the initial electrons so as to study the development characteristics of the electrons under different working coefficients. Experimental results show that the development characteristics of the initial electrons are influenced obviously by the working coefficient. With the increase of the working coefficient, the development degree of the electrons increases consequently. At the same times, there is a threshold of working coefficient which produces the effect of ionization on electrons. The range of the threshold has a slow growth but remains close to 65% with the gas pressure increase. When the working coefficient increases further, γ processes are starting to be generated inside the gap volume. In addition, an optimal working coefficient beneficial for improving the prefire characteristic is indicated and further tested.

  19. Electroforming free controlled bipolar resistive switching in Al/CoFe2O4/FTO device with self-compliance effect

    Science.gov (United States)

    Munjal, Sandeep; Khare, Neeraj

    2018-02-01

    Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 (CFO) films using an Al (aluminum)/CoFe2O4/FTO (fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly distinguished and stable resistance states without any application of compliance current, with a resistance ratio of the high resistance state (HRS) and the low resistance state (LRS) of >102. Small switching voltage (consumption device. In the LRS, the conduction mechanism was found to be Ohmic in nature, while the high-resistance state (HRS/OFF state) was governed by the space charge-limited conduction mechanism, which indicates the presence of an interfacial layer with an imperfect microstructure near the top Al/CFO interface. The device shows nonvolatile behavior with good endurance properties, an acceptable resistance ratio, uniform resistive switching due to stable, less random filament formation/rupture, and a control over the resistive switching properties by choosing different stop voltages, which makes the device suitable for its application in future nonvolatile resistive random access memory.

  20. Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300 °C by sol-gel method with forming-free operation

    Science.gov (United States)

    Jian, Wen-Yi; You, Hsin-Chiang; Wu, Cheng-Yen

    2018-01-01

    In this work, we used a sol-gel process to fabricate a ZnO-ZrO2-stacked resistive switching random access memory (ReRAM) device and investigated its switching mechanism. The Gibbs free energy in ZnO, which is higher than that in ZrO2, facilitates the oxidation and reduction reactions of filaments in the ZnO layer. The current-voltage (I-V) characteristics of the device revealed a forming-free operation because of nonlattice oxygen in the oxide layer. In addition, the device can operate under bipolar or unipolar conditions with a reset voltage of 0 to ±2 V, indicating that in this device, Joule heating dominates at reset and the electric field dominates in the set process. Furthermore, the characteristics reveal why the fabricated device exhibits a greater discrete distribution phenomenon for the set voltage than for the reset voltage. These results will enable the fabrication of future ReRAM devices with double-layer oxide structures with improved characteristics.

  1. A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

    Science.gov (United States)

    Pang, Hua; Deng, Ning

    2014-10-01

    The electroforming process of Ti/HfOx stacked RRAM devices is removed via the combination of low temperature atomic layer deposition and post metal annealing. The Pt/Ti/HfOx/Pt RRAM devices show a forming-free bipolar resistive switching behavior. By x-ray photoelectron emission spectroscopy analysis, it is found that there are many oxygen vacancies and nonlattice oxygen pre-existing in the HfOx layer that play a key role in removing the electroforming process. In addition, when the thickness ratio of the Ti and HfOx layer is 1, the uniformity of the switching parameters of Pt/Ti/HfOx/Pt devices is significantly improved. The OFF/ON window maintains about 100 at the read voltage of 0.1 V.

  2. Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory.

    Science.gov (United States)

    Lee, Sangheon; Woo, Jiyong; Lee, Daeseok; Cha, Euijun; Hwang, Hyunsang

    2014-01-01

    In this research, we analyzed the multi-functional role of a tunnel barrier that can be integrated in devices. This tunnel barrier, acting as an internal resistor, changes its resistance with applied bias. Therefore, the current flow in the devices can be controlled by a tunneling mechanism that modifies the tunnel barrier thickness for non-linearity and switching uniformity of devices. When a device is in a low-resistance state, the tunnel barrier controls the current behavior of the device because most of the bias is applied to the tunnel barrier owing to its higher resistance. Furthermore, the tunnel barrier induces uniform filament formation during set operation with the tunnel barrier controlling the current flow.

  3. Resistance switching of epitaxial VO2/Al2O3 heterostructure at room temperature induced by organic liquids

    Directory of Open Access Journals (Sweden)

    Mengmeng Yang

    2015-03-01

    Full Text Available We studied using organic liquids (cyclohexane, n-butanol, and ethylene glycol to modulate the transport properties at room temperature of an epitaxial VO2 film on a VO2/Al2O3 heterostructure. The resistance of the VO2 film increased when coated with cyclohexane or n-butanol, with maximum changes of 31% and 3.8%, respectively. In contrast, it decreased when coated with ethylene glycol, with a maximum change of −7.7%. In all cases, the resistance recovered to its original value after removing the organic liquid. This organic-liquid-induced reversible resistance switching suggests that VO2 films can be used as organic molecular sensors.

  4. Pseudospark switches

    International Nuclear Information System (INIS)

    Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

    1987-01-01

    The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

  5. A study on the clinical characteristics of treating nevus of Ota by Q-switched Nd:YAG laser.

    Science.gov (United States)

    Yan, Liu; Di, Li; Weihua, Wang; Feng, Liu; Ruilian, Li; Jun, Zhou; Hui, Su; Zhaoxia, Ying; Weihui, Zeng

    2018-01-01

    The purpose of this study was to retrospectively analyze the clinical characteristics of treating nevus of Ota by Q-switched Nd:YAG laser in Laser Cosmetology Center of Department of Dermatology, the Second Hospital, Xi'an Jiaotong University. The data of 1168 patients of nevus of Ota were analyzed retrospectively, which included the correlation among lesion color, treatment sessions, sex, age, lesion types, and effect. The Q-switched (QS) Nd:YAG laser system had a higher number of treatment sessions which were positively associated with a better response to treatment. Other variables, including gender, age, the categorization of the lesion according to Tanino's classification, and the color of the lesion, were not associated with the response to treatment. The treatment of nevus of Ota with QS Nd:YAG laser is safe and effective, with rare complications.

  6. A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

    International Nuclear Information System (INIS)

    Aldana, S; García-Fernández, P; Jiménez-Molinos, F; Gómez-Campos, F; Roldán, J B; Rodríguez-Fernández, Alberto; Romero-Zaliz, R; González, M B; Campabadal, F

    2017-01-01

    A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature and electric potential 3D distributions within the device dielectric at each simulation time step. The filamentary conduction has been described by obtaining the percolation paths formed by metallic atoms. Ni/HfO 2 /Si-n + unipolar devices have been fabricated and measured. The different experimental characteristics of the devices under study have been reproduced with accuracy by means of simulations. The main physical variables can be extracted at any simulation time to clarify the physics behind resistive switching; in particular, the final conductive filament shape can be studied in detail. (paper)

  7. Electric-pulse-induced resistance switching effect in the bulk of La0.5Ca0.5MnO3 ceramics

    Directory of Open Access Journals (Sweden)

    M. L. Wu

    2014-04-01

    Full Text Available In the majority of contributions, the electrical–pulse-induced resistance (EPIR switching effect of perovskite manganites is thought to originate from the extrinsic interfacial Schottky barrier between the metal electrode and the surface of sample. In this work, La0.5Ca0.5MnO3 (LCMO ceramic samples were synthesized by solid state reaction and the transport properties, especially, the EPIR effect and memristor behavior were investigated under 4-wire method using silver-glue as electrodes. Although the I-V characteristic of LCMO shows an ohmic linearity under the 4-wire mode at room temperature, a stable and remarkable EPIR can still be observed when the pulse voltage is more than a critical value. This bulk EPIR effect is novel for rare - earth doped manganites.

  8. T47D breast cancer cells switch from ER/HER to HER/c-Src signaling upon acquiring resistance to the antiestrogen fulvestrant.

    Science.gov (United States)

    Kirkegaard, Tove; Hansen, Susanne K; Larsen, Sarah L; Reiter, Birgit E; Sørensen, Boe S; Lykkesfeldt, Anne E

    2014-03-01

    In this study, T47D cell lines resistant to the antiestrogen fulvestrant were established and analyzed to explore, whether a switch to HER signaling, as seen in fulvestrant resistant MCF-7 cell lines, is a general resistance mechanism. We find that parental T47D cells depend on ER and HER signaling for growth. Fulvestrant resistant T47D cells have lost ER expression and, although HER2 was over expressed, growth was only partially driven by HER receptors. Instead c-Src was important for resistant growth. Thus, the T47D and MCF-7 model system unravel different resistance mechanisms which may be important for fulvestrant resistant breast cancer patients.

  9. Effect of electrode material on characteristics of non-volatile resistive memory consisting of Ag2S nanoparticles

    International Nuclear Information System (INIS)

    Jang, Jaewon

    2016-01-01

    In this study, Ag 2 S nanoparticles are synthesized and used as the active material for two-terminal resistance switching memory devices. Sintered Ag 2 S films are successfully crystallized on plastic substrates with synthesized Ag 2 S nanoparticles, after a relatively low-temperature sintering process (200 °C). After the sintering process, the crystallite size is increased from 6.8 nm to 80.3 nm. The high ratio of surface atoms to inner atoms of nanoparticles reduces the melting point temperature, deciding the sintering process temperature. In order to investigate the resistance switching characteristics, metal/Ag 2 S/metal structures are fabricated and tested. The effect of the electrode material on the non-volatile resistive memory characteristics is studied. The bottom electrochemically inert materials, such as Au and Pt, were critical for maintaining stable memory characteristics. By using Au and Pt inert bottom electrodes, we are able to significantly improve the memory endurance and retention to more than 10 3 cycles and 10 4 sec, respectively.

  10. Effect of electrode material on characteristics of non-volatile resistive memory consisting of Ag{sub 2}S nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jaewon, E-mail: j1jang@knu.ac.kr [School of Electronics Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of)

    2016-07-15

    In this study, Ag{sub 2}S nanoparticles are synthesized and used as the active material for two-terminal resistance switching memory devices. Sintered Ag{sub 2}S films are successfully crystallized on plastic substrates with synthesized Ag{sub 2}S nanoparticles, after a relatively low-temperature sintering process (200 °C). After the sintering process, the crystallite size is increased from 6.8 nm to 80.3 nm. The high ratio of surface atoms to inner atoms of nanoparticles reduces the melting point temperature, deciding the sintering process temperature. In order to investigate the resistance switching characteristics, metal/Ag{sub 2}S/metal structures are fabricated and tested. The effect of the electrode material on the non-volatile resistive memory characteristics is studied. The bottom electrochemically inert materials, such as Au and Pt, were critical for maintaining stable memory characteristics. By using Au and Pt inert bottom electrodes, we are able to significantly improve the memory endurance and retention to more than 10{sup 3} cycles and 10{sup 4} sec, respectively.

  11. Task switching in video game players: Benefits of selective attention but not resistance to proactive interference.

    Science.gov (United States)

    Karle, James W; Watter, Scott; Shedden, Judith M

    2010-05-01

    Research into the perceptual and cognitive effects of playing video games is an area of increasing interest for many investigators. Over the past decade, expert video game players (VGPs) have been shown to display superior performance compared to non-video game players (nVGPs) on a range of visuospatial and attentional tasks. A benefit of video game expertise has recently been shown for task switching, suggesting that VGPs also have superior cognitive control abilities compared to nVGPs. In two experiments, we examined which aspects of task switching performance this VGP benefit may be localized to. With minimal trial-to-trial interference from minimally overlapping task set rules, VGPs demonstrated a task switching benefit compared to nVGPs. However, this benefit disappeared when proactive interference between tasks was increased, with substantial stimulus and response overlap in task set rules. We suggest that VGPs have no generalized benefit in task switching-related cognitive control processes compared to nVGPs, with switch cost reductions due instead to a specific benefit in controlling selective attention. Copyright 2009 Elsevier B.V. All rights reserved.

  12. Overcoming imatinib resistance conferred by the BIM deletion polymorphism in chronic myeloid leukemia with splice-switching antisense oligonucleotides

    Science.gov (United States)

    Liu, Jun; Bhadra, Malini; Sinnakannu, Joanna Rajeswary; Yue, Wan Lin; Tan, Cheryl Weiqi; Rigo, Frank; Ong, S.Tiong; Roca, Xavier

    2017-01-01

    Many tyrosine kinase-driven cancers, including chronic myeloid leukemia (CML), are characterized by high response rates to specific tyrosine kinase inhibitors (TKIs) like imatinib. In East Asians, primary imatinib resistance is caused by a deletion polymorphism in Intron 2 of the BIM gene, whose product is required for TKI-induced apoptosis. The deletion biases BIM splicing from exon 4 to exon 3, generating splice isoforms lacking the exon 4-encoded pro-apoptotic BH3 domain, which impairs the ability of TKIs to induce apoptosis. We sought to identify splice-switching antisense oligonucleotides (ASOs) that block exon 3 but enhance exon 4 splicing, and thereby resensitize BIM deletion-containing cancers to imatinib. First, we mapped multiple cis-acting splicing elements around BIM exon 3 by minigene mutations, and found an exonic splicing enhancer acting via SRSF1. Second, by a systematic ASO walk, we isolated ASOs that corrected the aberrant BIM splicing. Eight of 67 ASOs increased exon 4 levels in BIM deletion-containing cells, and restored imatinib-induced apoptosis and TKI sensitivity. This proof-of-principle study proves that resistant CML cells by BIM deletion polymorphism can be resensitized to imatinib via splice-switching BIM ASOs. Future optimizations might yield a therapeutic ASO as precision-medicine adjuvant treatment for BIM-polymorphism-associated TKI-resistant CML and other cancers. PMID:29100409

  13. Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory

    International Nuclear Information System (INIS)

    Zhu, Linggang; Sun, Zhimei; Zhou, Jian; Guo, Zhonglu

    2015-01-01

    Transition-metal-oxide based resistance random access memory (RRAM) is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate materials used in the memories becomes an urgent task. Here, a structure with the TaO 2 formula was predicted using evolutionary algorithms in combination with first-principles calculations. This triclinic structure (T-TaO 2 ) is both energetically and dynamically more favorable than the commonly believed rutile structure (R-TaO 2 ). The metal-insulator transition (MIT) between metallic R-TaO 2 and T-TaO 2 (band gap: 1.0 eV) is via a Peierls distortion, which makes TaO 2 a potential candidate for RRAM. The energy barrier for the reversible phase transition is 0.19 eV/atom and 0.23 eV/atom, respectively, suggesting low power consumption for the resistance switch. The present findings about the MIT as the resistance-switch mechanism in Ta-O system will stimulate experimental work to fabricate tantalum oxides based RRAM

  14. Effects of different dopants on switching behavior of HfO2-based resistive random access memory

    International Nuclear Information System (INIS)

    Deng Ning; Pang Hua; Wu Wei

    2014-01-01

    In this study the effects of doping atoms (Al, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO 2 -based resistive random access memory (RRAM) are systematically investigated. The results show that forming voltages and set voltages of Al/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO 2 depending on dopants: oxygen vacancy (Vo) filaments for Al-doped HfO 2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO 2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO 2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Overcoming imatinib resistance conferred by the BIM deletion polymorphism in chronic myeloid leukemia with splice-switching antisense oligonucleotides.

    Science.gov (United States)

    Liu, Jun; Bhadra, Malini; Sinnakannu, Joanna Rajeswary; Yue, Wan Lin; Tan, Cheryl Weiqi; Rigo, Frank; Ong, S Tiong; Roca, Xavier

    2017-09-29

    Many tyrosine kinase-driven cancers, including chronic myeloid leukemia (CML), are characterized by high response rates to specific tyrosine kinase inhibitors (TKIs) like imatinib. In East Asians, primary imatinib resistance is caused by a deletion polymorphism in Intron 2 of the BIM gene, whose product is required for TKI-induced apoptosis. The deletion biases BIM splicing from exon 4 to exon 3, generating splice isoforms lacking the exon 4-encoded pro-apoptotic BH3 domain, which impairs the ability of TKIs to induce apoptosis. We sought to identify splice-switching antisense oligonucleotides (ASOs) that block exon 3 but enhance exon 4 splicing, and thereby resensitize BIM deletion-containing cancers to imatinib. First, we mapped multiple cis -acting splicing elements around BIM exon 3 by minigene mutations, and found an exonic splicing enhancer acting via SRSF1. Second, by a systematic ASO walk, we isolated ASOs that corrected the aberrant BIM splicing. Eight of 67 ASOs increased exon 4 levels in BIM deletion-containing cells, and restored imatinib-induced apoptosis and TKI sensitivity. This proof-of-principle study proves that resistant CML cells by BIM deletion polymorphism can be resensitized to imatinib via splice-switching BIM ASOs. Future optimizations might yield a therapeutic ASO as precision-medicine adjuvant treatment for BIM -polymorphism-associated TKI-resistant CML and other cancers.

  16. The Complex Resistivity Spectrum Characteristics About Stratabound Sulfide Deposits

    Science.gov (United States)

    Dong, P.; Sun, B.; Wang, L.; Chen, Z.; Dong, Z.; Wu, Y.

    2010-12-01

    Complex resistivity method has become the key technique of deep prospecting, and widely applied in stratabound sulfide deposits which often form massive ores. However, the complex resistivity spectrum characteristics of stratabound sulfide deposits remains unknown. Through studying variation problem of two-dimensional polarization medium, deducing the differential equations and calculating formula,we applied Cole-Cole model to deduce the spectrum of complex resistivity based on the model of three-node and four-node finite element method, and programmed homologous procedure. We utilized the Earth Model of Geological Layers which has accurate analytical solution to test rationality and accuracy of our modeling. We applied the layer structure provided by drilling results in Chenmenshan copper mine,which is typical strata-bound sulfide deposits in Jiangxi province,China, and calculated the spectra of complex resistivity, then made comparison between modeled and measured values. We find good corellation between them. Our studies may have imporved the interpretation of complex resistivity data, which help apply complex resistivity methods of propecting on stratabound sulfide deposites.

  17. Pulse characteristics in a doubly Q-switched Nd:GGG laser with an acousto-optic modulator and a monolayer graphene saturable absorber

    Science.gov (United States)

    Wang, Di; Zhao, Jia; Yang, Kejian; Zhao, Shengzhi; Li, Tao; Li, Dechun; Li, Guiqiu; Qiao, Wenchao

    2017-11-01

    A doubly Q-switched Nd:GGG laser emitting 1064 nm wavelength with an acousto-optic modulator (AOM) and a monolayer graphene saturable absorber (SA) is presented to study the pulse characteristics. In comparison with singly passive Q-switched laser (SPQSL) with grapheme SA, the doubly Q-switched laser (DQSL) can effectively shorten the pulse width and improve the pulse peak power. The existence of the ramping behavior of pulse characteristics versus modulation frequency in DQSL is shown. The average output power, the pulse width, the pulse energy and the peak power are related to modulation frequency of AOM, and the point of inflection is dominated by pump power.

  18. Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Science.gov (United States)

    Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M; Yu, Edward T; Lee, Jack C

    2014-02-12

    We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

  19. Modeling of Semiconductor Optical Amplifier Gain Characteristics for Amplification and Switching

    Science.gov (United States)

    Mahad, Farah Diana; Sahmah, Abu; Supa'at, M.; Idrus, Sevia Mahdaliza; Forsyth, David

    2011-05-01

    The Semiconductor Optical Amplifier (SOA) is presently commonly used as a booster or pre-amplifier in some communication networks. However, SOAs are also a strong candidate for utilization as multi-functional elements in future all-optical switching, regeneration and also wavelength conversion schemes. With this in mind, the purpose of this paper is to simulate the performance of the SOA for improved amplification and switching functions. The SOA is modeled and simulated using OptSim software. In order to verify the simulated results, a MATLAB mathematical model is also used to aid the design of the SOA. Using the model, the gain difference between simulated and mathematical results in the unsaturated region is <1dB. The mathematical analysis is in good agreement with the simulation result, with only a small offset due to inherent software limitations in matching the gain dynamics of the SOA.

  20. Switching and energy-storage characteristics in PLZT 2/95/5 antiferroelectric ceramic system

    Directory of Open Access Journals (Sweden)

    A. Peláiz-Barranco

    2016-12-01

    Full Text Available Switching mechanisms and energy-storage properties have been investigated in (Pb0.98La0.02(Zr0.95Ti0.050.995O3 antiferroelectric ceramics. The electric field dependence of polarization (P–E hysteresis loops indicates that both the ferroelectric (FE and antiferroelectric (AFE phases coexist, being the AFE more stable above 100∘C. It has been observed that the temperature has an important influence on the switching parameters. On the other hand, the energy-storage density, which has been calculated from the P–E hysteresis loops, shows values higher than 1J/cm3 for temperatures above 100∘C with around 73% of efficiency as average. These properties indicate that the studied ceramic system reveals as a promising AFE material for energy-storage devices application.

  1. Electron transfer at the contact between Al electrode and gold nanoparticles of polymer: Nanoparticle resistive switching devices studied by alternating current impedance spectroscopy

    International Nuclear Information System (INIS)

    Ouyang, Jianyong

    2013-01-01

    Electron transfer at the contact between an Al electrode and Au nanoparticles of polymer:nanoparticle devices is studied by ac impedance spectroscopy. The devices have a polystyrene layer embedded with Au nanoparticles capped with conjugated 2-naphthalenethiol sandwiched between Al and MoO 3 /Al electrodes, and they exhibit electrode-sensitive resistive switches. The devices in the pristine or high resistance state have high capacitance. The capacitance decreases after the devices switch to a low resistance state by a voltage scan. The change in the capacitance is attributed to the voltage-induced change on the electronic structure of the contact between the Al electrode and Au nanoparticles

  2. Induced Surge Characteristics on a Control Cable in a Gas-Insulated Substation due to Switching Operation

    Science.gov (United States)

    Ametani, Akihiro; Goto, Takahiro; Nagaoka, Naoto; Omura, Hiroshi

    This paper has investigated the basic characteristics of switching surges in a gas-insulated substation and induced surges to a control cable based on EMTP simulations. It has been found that a switching surge voltage on the core conductor of a gas-insulated bus (GIB) tends to increase and the oscillating frequency becomes lower as the number of spacers increases. The maximum switching overvoltages become greater at the nodes nearby an operating disconnector (DS)/circuit breaker (CB) and become smaller at the source side. An induced surge to a control cable tends to increase as the parallel length of the GIB and the control cable increases. However, in the case of an open-circuited GIB, there exists a length which gives the highest voltage. A transient current becomes very large if a voltage transformer (VT) or a spacer is installed right next to an operating CB or DS, although this current does not affect the induced and VT transferred surge to the control cable. Also it is observed that a ramp wave voltage causes polarity reversing of a transient voltage on the GIB tank and the control cable.

  3. What can we learn from AC impedance study about the bipolar resistive switching effect in LaAlO3/Nb:SrTiO3 heterostructures

    Science.gov (United States)

    Jiang, Xingli; Zhao, Yonggang; Zhang, Xin; Zhu, Meihong; Zhang, Huiyun; Shang, Dashan; Sun, Jirong

    2013-03-01

    Recently, resistive switching (RS) effect has attracted much attention due to its importance in potential applications in resistance random access memory. It has been shown that traps play an important role in RS effect. However, a direct and in-depth study on the characteristics of traps is still lacking so far, including the spatial and energy distribution of traps, relaxation of trapped carriers and transport of carriers via traps, especially the effect of historical process on the transport of carriers, which are important for understanding the mechanism of RS effect and also essential for optimizing devices. We studied the RS effect in heterostructures composed of LaAlO3 (LAO) and Nb:SrTiO3 (NSTO) from 80 to 300 K by using AC impedance technique. It was demonstrated that the bipolar RS effect originates from the LAO/NSTO interface and the resistance states are controlled by the filling status of traps via the trapping/detrapping of electrons. Moreover, the spatial and energy distributions of traps and the effect of history on the transport of carriers were obtained. A model was proposed to explain the experimental results. This work demonstrates that AC impedance technique is powerful for uncovering the mechanism of RS effect.

  4. Resistive switching in ceramic multiferroic Bi{sub 0.9}Ca{sub 0.1}FeO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Rubi, Diego, E-mail: rubi@tandar.cnea.gov.ar [GIA and INN, CAC-CNEA, 1650 San Martin (Argentina); Gomez-Marlasca, Fernando [GIA and INN, CAC-CNEA, 1650 San Martin (Argentina); Bonville, Pierre; Colson, Dorothee; Levy, Pablo [CEA Saclay, IRAMIS, SPEC (CNRS URA 2464), F-91191 Gif sur Yvette (France)

    2012-08-15

    We report resistive switching effects in polycrystalline samples of the multiferroic Bi{sub 0.9}Ca{sub 0.1}FeO{sub 3} with silver electrodes. Moessbauer spectroscopy shows that upon Ca-doping the Fe remains in a 3+ valence state, suggesting charge compensation through the creation of large amounts of oxygen vacancies. Electrical characterization shows that the oxide/metal resistance can be switched between high and low resistance states by applying voltage pulses. This process was shown to be forming free and a strong relaxation after switching was found. We rationalize our results by considering oxygen vacancies migration to and from the metal-oxide interface, resulting in variations of the Schottky potential barrier height that modulate the interface resistance.

  5. Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

    International Nuclear Information System (INIS)

    Bory, Benjamin F.; Meskers, Stefan C. J.; Rocha, Paulo R. F.; Gomes, Henrique L.; Leeuw, Dago M. de

    2015-01-01

    Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10 17  m −2 . We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching

  6. Steady-State Characteristics Analysis of Hybrid-Excited Flux-Switching Machines with Identical Iron Laminations

    Directory of Open Access Journals (Sweden)

    Gan Zhang

    2015-11-01

    Full Text Available Since the air-gap field of flux-switching permanent magnet (FSPM machines is difficult to regulate as it is produced by the stator-magnets alone, a type of hybrid-excited flux-switching (HEFS machine is obtained by reducing the magnet length of an original FSPM machine and introducing a set of field windings into the saved space. In this paper, the steady-state characteristics, especially for the loaded performances of four prototyped HEFS machines, namely, PM-top, PM-middle-1, PM-middle-2, and PM-bottom, are comprehensively compared and evaluated based on both 2D and 3D finite element analysis. Also, the influences of PM materials including ferrite and NdFeB, respectively, on the characteristics of HEFS machines are covered. Particularly, the impacts of magnet movement in the corresponding slot on flux-regulating performances are studied in depth. The best overall performances employing NdFeB can be obtained when magnets are located near the air-gap. The FEA predictions are validated by experimental measurements on corresponding machine prototypes.

  7. Faster in-plane switching and reduced rotational viscosity characteristics in a graphene-nematic suspension

    Energy Technology Data Exchange (ETDEWEB)

    Basu, Rajratan, E-mail: basu@usna.edu; Kinnamon, Daniel; Skaggs, Nicole; Womack, James [Soft Matter and Nanomaterials Laboratory, Department of Physics, The United States Naval Academy, Annapolis, Maryland 21402 (United States)

    2016-05-14

    The in-plane switching (IPS) for a nematic liquid crystal (LC) was found to be considerably faster when the LC was doped with dilute concentrations of monolayer graphene flakes. Additional studies revealed that the presence of graphene reduced the rotational viscosity of the LC, permitting the nematic director to respond quicker in IPS mode on turning the electric field on. The studies were carried out with several graphene concentrations in the LC, and the experimental results coherently suggest that there exists an optimal concentration of graphene, allowing a reduction in the IPS response time and rotational viscosity in the LC. Above this optimal graphene concentration, the rotational viscosity was found to increase, and consequently, the LC no longer switched faster in IPS mode. The presence of graphene suspension was also found to decrease the LC's pretilt angle significantly due to the π-π electron stacking between the LC molecules and graphene flakes. To understand the π-π stacking interaction, the anchoring mechanism of the LC on a CVD grown monolayer graphene film on copper substrate was studied by reflected crossed polarized microscopy. Optical microphotographs revealed that the LC alignment direction depended on monolayer graphene's hexagonal crystal structure and its orientation.

  8. Characteristics Analysis and Comparison of High-Speed 4/2 and Hybrid 4/4 Poles Switched Reluctance Motor

    Directory of Open Access Journals (Sweden)

    Grace Firsta Lukman

    2018-01-01

    Full Text Available This paper presents a characteristics analysis and performance comparison of high-speed two-phase 4/2 and hybrid single-phase 4/4 switched reluctance motors (SRMs. Although the motors are advantageous as high-speed drives, both conventional structures have high torque ripple as a result of the presence of the torque dead zone. In this paper, solutions to the torque dead zone problem for each motor are discussed. For the 4/2 SRM, a wide-rotor stepper-type is adopted, while for the 4/4 SRM, the structure is changed to a hybrid by adding permanent magnets (PMs. Both motors have a non-uniform air gap to modify their inductance profile, which leads to the elimination of the torque dead zone. A finite-element method was used to analyze the characteristics of each motor. Then, the manufactured motors were tested through experiments, and lastly, their performance was compared.

  9. WTC rat has unique characteristics such as resistant to streptozotocin.

    Science.gov (United States)

    Nagaki, Yoshiaki; Ito, Koichi; Kuwahara, Masayoshi

    2016-12-01

    Because we found that WTC rats might be resistant to streptozotocin (STZ), we have elucidated the mechanisms of resistant to the diabetogenic effects of STZ in the WTC rats. Dose response to STZ was evaluated with glucose levels. No significant changes in glucose level to STZ administration were observed in WTC rats. Insulin secretion by suppling glucose was preserved in WTC rats even after STZ administration. Although there was no significant difference in gene expression of both GLUT2 and Kir6.2, which were involved in STZ resistance, between WTC rats and Wistar rats, the expression of metallothionein 2a in pancreas and liver to STZ administration of WTC rats was significantly higher than that of Wistar rats. Moreover, alloxan did not induce diabetes in WTC rats as same as STZ. These results suggest that WTC rats might have powerful antioxidant property to protect β cells in pancreas. Because the STZ-resistant property is very close characteristics to human beings, WTC rats will become a useful animal model in diabetic researches.

  10. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chun-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan (China); Tang, Jian-Fu; Su, Hsiu-Hsien [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Hong, Cheng-Shong; Huang, Chih-Yu [Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

    2016-06-28

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  11. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    International Nuclear Information System (INIS)

    Lin, Chun-Cheng; Tang, Jian-Fu; Su, Hsiu-Hsien; Hong, Cheng-Shong; Huang, Chih-Yu; Chu, Sheng-Yuan

    2016-01-01

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li 0.06 Zn 0.94 O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li + ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  12. Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO3 thin films with different compliance currents

    International Nuclear Information System (INIS)

    Tang, M H; Wang, Z P; Zeng, Z Q; Xu, X L; Wang, G Y; Zhang, L B; Xiao, Y G; Yang, S B; Jiang, B; Li, J C; He, J

    2011-01-01

    The SrTiO 3 (STO) thin films on a Pt/Ti/SiO 2 /Si substrate were synthesized using a sol–gel method to form a metal–insulator–metal structure. This device shows the bipolar resistance switching (BRS) behavior for a compliance current I cc of less than 0.1 mA but exhibits soft breakdown at a higher level of compliance current. A transition from the BRS behavior to the stable unipolar resistive switching behavior (URS) was also observed. We found that the BRS behavior may be controlled by the structure interface while the URS behavior is likely bulk controlled. Our study indicates that the external compliance current is a key factor in resistance switching phenomenon of STO thin films

  13. Molecular Rotors as Switches

    Directory of Open Access Journals (Sweden)

    Kang L. Wang

    2012-08-01

    Full Text Available The use of a functional molecular unit acting as a state variable provides an attractive alternative for the next generations of nanoscale electronics. It may help overcome the limits of conventional MOSFETd due to their potential scalability, low-cost, low variability, and highly integratable characteristics as well as the capability to exploit bottom-up self-assembly processes. This bottom-up construction and the operation of nanoscale machines/devices, in which the molecular motion can be controlled to perform functions, have been studied for their functionalities. Being triggered by external stimuli such as light, electricity or chemical reagents, these devices have shown various functions including those of diodes, rectifiers, memories, resonant tunnel junctions and single settable molecular switches that can be electronically configured for logic gates. Molecule-specific electronic switching has also been reported for several of these device structures, including nanopores containing oligo(phenylene ethynylene monolayers, and planar junctions incorporating rotaxane and catenane monolayers for the construction and operation of complex molecular machines. A specific electrically driven surface mounted molecular rotor is described in detail in this review. The rotor is comprised of a monolayer of redox-active ligated copper compounds sandwiched between a gold electrode and a highly-doped P+ Si. This electrically driven sandwich-type monolayer molecular rotor device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and a retention time of greater than 104 s. The rotation speed of this type of molecular rotor has been reported to be in the picosecond timescale, which provides a potential of high switching speed applications. Current-voltage spectroscopy (I-V revealed a temperature-dependent negative differential resistance (NDR associated with the device. The analysis of the device

  14. Optical nonlinearity, limiting and switching characteristics of novel ruthenium metal-organic complex

    Science.gov (United States)

    Manjunatha, K. B.; Rajarao, Ravindra; Umesh, G.; Ramachandra Bhat, B.; Poornesh, P.

    2017-10-01

    We report the nonlinear optical properties of Ruthenium metal complex a promising organic material for use in scientific and technological applications. The thin films of newly synthesized ruthenium metal-organic complex were fabricated using spin coating technique. Z-scan and degenerate four wave mixing (DFWM) techniques used to extract the third-order nonlinear optical (NLO) parameters. The data reveals the investigated material exhibited relatively large NLO properties. The pump-probe experiments shows that the switch-on and off times of the material were in the order of μs at different pump intensities and the energy dependent transmission studies reveal good limiting property of the material in nanosecond regime.

  15. KSC lubricant testing program. [lubrication characteristics and corrosion resistance

    Science.gov (United States)

    Lockhart, B. J.; Bryan, C. J.

    1973-01-01

    A program was conducted to evaluate the performance of various lubricants in use and considered for use at Kennedy Space Center (KSC). The overall objectives of the program were to: (1) determine the lubrication characteristics and relative corrosion resistance of lubricants in use and proposed for use at KSC; (2) identify materials which may be equivalent to or better than KELF-90 and Krytox 240 AC greases; and (3) identify or develop an improved lubricating oil suitable for use in liquid oxygen (LOX) pumps at KSC. It was concluded that: (1) earth gel thickened greases are very poor corrosion preventive materials in the KSC environment; (2) Halocarbon 25-5S and Braycote 656 were suitable substiutes for KELF-90 and Krytox 240 AC respectively; and (3) none of the oils evaluated possessed the necessary inertness, lubricity, and corrosion prevention characteristics for the KSC LOX pumping systems in their present configuration.

  16. Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-01

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be ‘read out’ by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  17. Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-12

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  18. Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.

    Science.gov (United States)

    Arita, Masashi; Takahashi, Akihito; Ohno, Yuuki; Nakane, Akitoshi; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo

    2015-11-27

    In-situ transmission electron microscopy (in-situ TEM) was performed to investigate the switching operation of a resistive random access memory (ReRAM) made of copper, tungsten oxide and titanium nitride (Cu/WOx/TiN). In the first Set (Forming) operation to initialize the device, precipitation appeared inside the WOx layer. It was presumed that a Cu conducting filament was formed, lowering the resistance (on-state). The Reset operation induced a higher resistance (the off-state). No change in the microstructure was identified in the TEM images. Only when an additional Reset current was applied after switching to the off-state could erasure of the filament be seen (over-Reset). Therefore, it was concluded that structural change relating to the resistance switch was localized in a very small area around the filament. With repeated switching operations and increasing operational current, the WOx/electrode interfaces became indistinct. At the same time, the resistance of the off-state gradually decreased. This is thought to be caused by Cu condensation at the interfaces because of leakage current through the area other than through the filament. This will lead to device degradation through mechanisms such as endurance failure. This is the first accelerated aging test of ReRAM achieved using in-situ TEM.

  19. Characterization and modeling of SET/RESET cycling induced read-disturb failure time degradation in a resistive switching memory

    Science.gov (United States)

    Su, Po-Cheng; Hsu, Chun-Chi; Du, Sin-I.; Wang, Tahui

    2017-12-01

    Read operation induced disturbance in SET-state in a tungsten oxide resistive switching memory is investigated. We observe that the reduction of oxygen vacancy density during read-disturb follows power-law dependence on cumulative read-disturb time. Our study shows that the SET-state read-disturb immunity progressively degrades by orders of magnitude as SET/RESET cycle number increases. To explore the cause of the read-disturb degradation, we perform a constant voltage stress to emulate high-field stress effects in SET/RESET cycling. We find that the read-disturb failure time degradation is attributed to high-field stress-generated oxide traps. Since the stress-generated traps may substitute for some of oxygen vacancies in forming conductive percolation paths in a switching dielectric, a stressed cell has a reduced oxygen vacancy density in SET-state, which in turn results in a shorter read-disturb failure time. We develop an analytical read-disturb degradation model including both cycling induced oxide trap creation and read-disturb induced oxygen vacancy reduction. Our model can well reproduce the measured read-disturb failure time degradation in a cycled cell without using fitting parameters.

  20. Phenomenological analysis of random telegraph noise in amorphous TiOx-based bipolar resistive switching random access memory devices.

    Science.gov (United States)

    Lee, Jung-Kyu; Lee, Ju-Wan; Bae, Jong-Ho; Park, Jinwon; Chung, Sung-Woong; Roh, Jae Sung; Hong, Sung-Joo; Lee, Jong-Ho

    2012-07-01

    As dimensions of resistive random access memories (RRAMs) devices continue to shrink, the low-frequency noise of nanoscale devices has become increasingly important in evaluating the device reliability. Thus, we investigated random telegraph noise (RTN) caused by capture and emission of an electron at traps. We physically analyzed capture and emission processes through systematic measurements of amorphous TiOx (alpha-TiOx)-based bipolar RRAMs. RTNs were observed during high-resistance state (HRS) in most devices. However, discrete switching behavior was scarcely observed in low-resistance state (LRS) as most of traps in the alpha-TiOx were filled with mobile ions such as O2- in LRS. The capture and emission processes of an electron at traps are largely divided into two groups: (1) both capture and emission processes are mainly affected by electric field; and (2) one of the capture and emission processes is only influenced by the thermal process. This paper provides fundamental physics required to understand the mechanism of RTNs in alpha-TiOx-based bipolar RRAMs.

  1. Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO3-δ Films on Silicon.

    Science.gov (United States)

    Gómez, Andrés; Vila-Fungueiriño, José Manuel; Moalla, Rahma; Saint-Girons, Guillaume; Gázquez, Jaume; Varela, María; Bachelet, Romain; Gich, Martí; Rivadulla, Francisco; Carretero-Genevrier, Adrián

    2017-10-01

    Materials that can couple electrical and mechanical properties constitute a key element of smart actuators, energy harvesters, or many sensing devices. Within this class, functional oxides display specific mesoscale responses which often result in great sensitivity to small external stimuli. Here, a novel combination of molecular beam epitaxy and a water-based chemical-solution method is used for the design of mechanically controlled multilevel device integrated on silicon. In particular, the possibility of adding extra functionalities to a ferroelectric oxide heterostructure by n-doping and nanostructuring a BaTiO 3 thin film on Si(001) is explored. It is found that the ferroelectric polarization can be reversed, and resistive switching can be measured, upon a mechanical load in epitaxial BaTiO 3- δ /La 0.7 Sr 0.3 MnO 3 /SrTiO 3 /Si columnar nanostructures. A flexoelectric effect is found, stemming from substantial strain gradients that can be created with moderate loads. Simultaneously, mechanical effects on the local conductivity can be used to modulate a nonvolatile resistive state of the BaTiO 3- δ heterostructure. As a result, three different configurations of the system become accessible on top of the usual voltage reversal of polarization and resistive states. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Thickness-dependent electroforming behavior of ultra-thin Ta{sub 2}O{sub 5} resistance switching layer

    Energy Technology Data Exchange (ETDEWEB)

    Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Hwang, Cheol Seong [Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, 151-744, Seoul (Korea, Republic of); Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung [SK Hynix Inc., 2091 Gyeongchung-daero, Bubal-eub, Icheon-si, 467-734, Gyeonggi-do (Korea, Republic of); Kim, Kyung Min [Hewlett-Packard Laboratories, Hewlett-Packard Company, Palo Alto, California, 94304 (United States); Choi, Byung Joon [Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, 139-743 (Korea, Republic of)

    2015-06-15

    Electroforming behaviours of Ta{sub 2}O{sub 5} resistance switching memory cell with a diameter of 28 nm and different thickness (0.5-2.0 nm) of Ta{sub 2}O{sub 5} layer have been examined. The devices showed a constant forming electric field of 0.54 V/nm regardless of Ta{sub 2}O{sub 5} thickness. The electroforming with negative bias to top TiN electrode was ascribed to electric field- driven migration of oxygen vacancies, originally residing near the bottom interface, toward the top electrode interface and formation of conducting filaments. The estimated electroforming energy (0.094-0.14 eV) was favourably compared with the hopping energy of electrons from the V{sub O} site to a nearby Ta site. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Nanoscale self-recovery of resistive switching in Ar+ irradiated TiO2‑x films

    Science.gov (United States)

    Barman, A.; Saini, C. P.; Sarkar, P. K.; Das, D.; Dhar, S.; Singh, M.; Sinha, A. K.; Kanjilal, D.; Gupta, M.; Phase, D. M.; Kanjilal, A.

    2017-11-01

    Nanoscale evidence of self-recovery in resistive switching (RS) behavior was found in TiO2‑x film by conductive atomic force microscopy when exposed to Ar+-ions above a threshold fluence of 1  ×  1016 ions cm‑2. This revealed an evolution and gradual disappearance of bipolar RS-loops, followed by reappearance with increasing number of voltage sweep. This was discussed in the realm of oxygen vacancy (OV) driven formation, dissolution and reformation of conducting filaments. The presence of OVs in ion-beam irradiated TiO2‑x films was evidenced by decreasing trend of work function in scanning-Kelvin probe microscopy, and was further verified by x-ray absorption near edge spectroscopy at Ti and O-K edges.

  4. Characteristics of Hybrid Type Switched Reluctance Motor with Salient Pole Stator

    Science.gov (United States)

    Oyama, Jun; Higuchi, Tsuyoshi; Abe, Takashi; Koga, Takahiro

    In this paper, we propose a new Hybrid type SRM with salient pole stator, which has a pair of permanent magnets attached symmetrically between the iron poles of the rotor. The paper describes experimental results of not only basic characteristics of the Hybrid SRM but also characteristics with current control loop under optimized advanced firing angle and cut-off angle. Considerable improvement of machine performance, especially efficiency and power factor, in the Hybrid SRM over conventional VR type SRM is confirmed.

  5. Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

    Science.gov (United States)

    Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

    2018-05-01

    Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

  6. A multidrug resistance plasmid contains the molecular switch for type VI secretion in Acinetobacter baumannii

    Science.gov (United States)

    Weber, Brent S.; Ly, Pek Man; Irwin, Joshua N.; Pukatzki, Stefan; Feldman, Mario F.

    2015-01-01

    Infections with Acinetobacter baumannii, one of the most troublesome and least studied multidrug-resistant superbugs, are increasing at alarming rates. A. baumannii encodes a type VI secretion system (T6SS), an antibacterial apparatus of Gram-negative bacteria used to kill competitors. Expression of the T6SS varies among different strains of A. baumannii, for which the regulatory mechanisms are unknown. Here, we show that several multidrug-resistant strains of A. baumannii harbor a large, self-transmissible resistance plasmid that carries the negative regulators for T6SS. T6SS activity is silenced in plasmid-containing, antibiotic-resistant cells, while part of the population undergoes frequent plasmid loss and activation of the T6SS. This activation results in T6SS-mediated killing of competing bacteria but renders A. baumannii susceptible to antibiotics. Our data show that a plasmid that has evolved to harbor antibiotic resistance genes plays a role in the differentiation of cells specialized in the elimination of competing bacteria. PMID:26170289

  7. Investigation of resistance switching in SiO x RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator.

    Science.gov (United States)

    Sadi, Toufik; Mehonic, Adnan; Montesi, Luca; Buckwell, Mark; Kenyon, Anthony; Asenov, Asen

    2018-02-28

    We employ an advanced three-dimensional (3D) electro-thermal simulator to explore the physics and potential of oxide-based resistive random-access memory (RRAM) cells. The physical simulation model has been developed recently, and couples a kinetic Monte Carlo study of electron and ionic transport to the self-heating phenomenon while accounting carefully for the physics of vacancy generation and recombination, and trapping mechanisms. The simulation framework successfully captures resistance switching, including the electroforming, set and reset processes, by modeling the dynamics of conductive filaments in the 3D space. This work focuses on the promising yet less studied RRAM structures based on silicon-rich silica (SiO x ) RRAMs. We explain the intrinsic nature of resistance switching of the SiO x layer, analyze the effect of self-heating on device performance, highlight the role of the initial vacancy distributions acting as precursors for switching, and also stress the importance of using 3D physics-based models to capture accurately the switching processes. The simulation work is backed by experimental studies. The simulator is useful for improving our understanding of the little-known physics of SiO x resistive memory devices, as well as other oxide-based RRAM systems (e.g. transition metal oxide RRAMs), offering design and optimization capabilities with regard to the reliability and variability of memory cells.

  8. Investigation of resistance switching in SiO x RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator

    Science.gov (United States)

    Sadi, Toufik; Mehonic, Adnan; Montesi, Luca; Buckwell, Mark; Kenyon, Anthony; Asenov, Asen

    2018-02-01

    We employ an advanced three-dimensional (3D) electro-thermal simulator to explore the physics and potential of oxide-based resistive random-access memory (RRAM) cells. The physical simulation model has been developed recently, and couples a kinetic Monte Carlo study of electron and ionic transport to the self-heating phenomenon while accounting carefully for the physics of vacancy generation and recombination, and trapping mechanisms. The simulation framework successfully captures resistance switching, including the electroforming, set and reset processes, by modeling the dynamics of conductive filaments in the 3D space. This work focuses on the promising yet less studied RRAM structures based on silicon-rich silica (SiO x ) RRAMs. We explain the intrinsic nature of resistance switching of the SiO x layer, analyze the effect of self-heating on device performance, highlight the role of the initial vacancy distributions acting as precursors for switching, and also stress the importance of using 3D physics-based models to capture accurately the switching processes. The simulation work is backed by experimental studies. The simulator is useful for improving our understanding of the little-known physics of SiO x resistive memory devices, as well as other oxide-based RRAM systems (e.g. transition metal oxide RRAMs), offering design and optimization capabilities with regard to the reliability and variability of memory cells.

  9. Morphological switch to a resistant subpopulation in response to viral infection in the bloom-forming coccolithophore Emiliania huxleyi.

    Science.gov (United States)

    Frada, Miguel José; Rosenwasser, Shilo; Ben-Dor, Shifra; Shemi, Adva; Sabanay, Helena; Vardi, Assaf

    2017-12-01

    Recognizing the life cycle of an organism is key to understanding its biology and ecological impact. Emiliania huxleyi is a cosmopolitan marine microalga, which displays a poorly understood biphasic sexual life cycle comprised of a calcified diploid phase and a morphologically distinct biflagellate haploid phase. Diploid cells (2N) form large-scale blooms in the oceans, which are routinely terminated by specific lytic viruses (EhV). In contrast, haploid cells (1N) are resistant to EhV. Further evidence indicates that 1N cells may be produced during viral infection. A shift in morphology, driven by meiosis, could therefore constitute a mechanism for E. huxleyi cells to escape from EhV during blooms. This process has been metaphorically coined the 'Cheshire Cat' (CC) strategy. We tested this model in two E. huxleyi strains using a detailed assessment of morphological and ploidy-level variations as well as expression of gene markers for meiosis and the flagellate phenotype. We showed that following the CC model, production of resistant cells was triggered during infection. This led to the rise of a new subpopulation of cells in the two strains that morphologically resembled haploid cells and were resistant to EhV. However, ploidy-level analyses indicated that the new resistant cells were diploid or aneuploid. Thus, the CC strategy in E. huxleyi appears to be a life-phase switch mechanism involving morphological remodeling that is decoupled from meiosis. Our results highlight the adaptive significance of morphological plasticity mediating complex host-virus interactions in marine phytoplankton.

  10. Interface-dependent resistance switching in Nd0⋅7 MnO3 ceramics

    Indian Academy of Sciences (India)

    Administrator

    EPIR) in Nd0⋅7Sr0⋅3MnO3 ceramics was studied. The results reveal that the EPIR effect originates from the interface between the electrodes and the bulk, and the EPIR ratio as well as the high and low resistance states can be strongly influ-.

  11. Bioinspired Tribotronic Resistive Switching Memory for Self-Powered Memorizing Mechanical Stimuli.

    Science.gov (United States)

    Sun, Yihui; Zheng, Xin; Yan, Xiaoqin; Liao, Qingliang; Liu, Shuo; Zhang, Guangjie; Li, Yong; Zhang, Yue

    2017-12-20

    Haptic memory, from the interaction of skin and brain, can not only perceive external stimuli but also memorize it after removing the external stimuli. For the mimicry of human sensory memory, a self-powered artificial tactile memorizing system was developed by coupling bionic electronic skin and nonvolatile resistive random access memory (RRAM). The tribotronic nanogenerator is utilized as electronic skin to transform the touching signal into electric pulse, which will be programmed into the artificial brain: RRAM. Because of the advanced structural designs and accurate parameter matching, including the output voltages and the resistances in different resistive states, the artificial brain can be operated in self-powered mode to memorize the touch stimuli with the responsivity up to 20 times. For demonstrating the application potential of this system, it was fabricated as an independently addressed matrix to realize the memorizing of motion trace in two-dimensional space. The newly designed self-powered nonvolatile system has broad applications in next-generation high-performance sensors, artificial intelligence, and bionics.

  12. Advanced Macro-Model with Pulse-Width Dependent Switching Characteristic for Spin Transfer Torque Based Magnetic-Tunnel-Junction Elements

    Science.gov (United States)

    Sojeong Kim,; Seungjun Lee,; Hyungsoon Shin,

    2010-04-01

    In spin transfer torque (STT)-based magnetic tunnel junction (MTJ), the switching depends on the current pulse-width as well as the magnitude of the switching current. We present an advanced macro-model of an STT-MTJ for a circuit simulator such as HSPICE. The macro-model can simulate the dependence of switching behavior on current pulse-width in an STT-MTJ. An imaginary resistor-capacitor (RC) circuit is adopted to emulate complex timing behavior which cannot be described nicely by existing functions in HSPICE. Simulation results show the resistance-current (R-I) curve and timing behavior is in good agreement with the experimental data.

  13. Multilevel resistance switching effect in Au/La2/3Ba1/3MnO3/Pt heterostructure manipulated by external fields

    Science.gov (United States)

    Wen, Jiahong; Zhao, Xiaoyu; Li, Qian; Zhang, Sheng; Wang, Dunhui; Du, Youwei

    2018-04-01

    Multilevel resistance switching (RS) effect has attracted more and more attention due to its promising potential for the increase of storage density in memory devices. In this work, the transport properties are investigated in an Au/La2/3Ba1/3MnO3 (LBMO)/Pt heterostructure. Taking advantage of the strong interplay among the spin, charge, orbital and lattice of LBMO, the Au/LBMO/Pt device can exhibit bipolar RS effect and magnetoresistance effect simultaneously. Under the coaction of electric field and magnetic field, four different resistance states are achieved in this device. These resistance states show excellent repeatability and retentivity and can be switched between any two states, which suggest the potential applications in the multilevel RS memory devices with enhanced storage density.

  14. Pan-European early switch/early discharge opportunities exist for hospitalized patients with methicillin-resistant Staphylococcus aureus complicated skin and soft tissue infections.

    Science.gov (United States)

    Nathwani, D; Eckmann, C; Lawson, W; Stephens, J M; Macahilig, C; Solem, C T; Simoneau, D; Chambers, R; Li, J Z; Haider, S

    2014-10-01

    The objective of this study was to document pan-European real-world treatment patterns and healthcare resource use and estimate opportunities for early switch (ES) from intravenous (IV) to oral antibiotics and early discharge (ED) in hospitalized patients with methicillin-resistant Staphylococcus aureus (MRSA) complicated skin and soft tissue infections (cSSTIs). This retrospective observational medical chart review study enrolled 342 physicians across 12 European countries who collected data from 1542 patients with documented MRSA cSSTI who were hospitalized (July 2010 to June 2011) and discharged alive (by July 2011). Data included clinical characteristics and outcomes, hospital length of stay (LOS), MRSA-targeted IV and oral antibiotic use, and ES and ED eligibility according to literature-based and expert-validated criteria. The most frequent initial MRSA-active antibiotics were vancomycin (50.2%), linezolid (15.1%), clindamycin (10.8%), and teicoplanin (10.4%). Patients discharged with MRSA-active antibiotics (n = 480) were most frequently prescribed linezolid (42.1%) and clindamycin (19.8%). IV treatment duration (9.3 ± 6.5 vs. 14.6 ± 9.9 days; p MRSA cSSTI could be eligible for ES and ED, resulting in substantial reductions in IV days and bed-days, with potential savings of €2000 per ED-eligible patient. © 2014 The Authors Clinical Microbiology and Infection © 2014 European Society of Clinical Microbiology and Infectious Diseases.

  15. Multi-level switching in TiO x F y film with nanoparticles

    Science.gov (United States)

    Sun, Xiangyu; Wu, Chuangui; Shuai, Yao; Pan, Xinqiang; Luo, Wenbo; You, Tiangui; Du, Nan; Schmidt, Heidemarie

    2017-09-01

    A reliable bipolar resistive switching device was achieved with multi-level switching behavior in fluorine-doped titanium oxide (TiO x F y ) film. Different resistance states can be precisely controlled by different pulse voltages, which reveals the device’s high potential in neuromorphic research. The characteristics of I-V curves in each resistance state were analyzed. Nanoparticles were observed in the TiO x F y film by HR-TEM. The underlying physical mechanisms during resistance switching are discussed and a model of a meshy conducting path is proposed.

  16. Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films on LaNiO3-buffered Si substrates

    International Nuclear Information System (INIS)

    Chen Xinman; Zhang Hu; Ruan Kaibin; Shi Wangzhou

    2012-01-01

    Highlights: ► Annealing effect on the bipolar resistive switching behaviors of BiFeO 3 thin films with Pt/BiFeO 3 /LNO was reported. ► Rectification property was explained from the asymmetrical contact between top and bottom interfaces and the distinct oxygen vacancy density. ► The modification of Schottky-like barrier was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices. - Abstract: We reported the annealing effect on the electrical behaviors of BiFeO 3 thin films integrated on LaNiO 3 (LNO) layers buffered Si substrates by sol–gel spin-coating technique. All the BiFeO 3 thin films exhibit the reversible bipolar resistive switching behaviors with Pt/BiFeO 3 /LNO configuration. The electrical conduction mechanism of the devices was dominated by the Ohmic conduction in the low resistance state and trap-controlled space charged limited current in the high resistance state. Good diode-like rectification property was observed in device with BiFeO 3 film annealed at 500 °C, but vanished in device with BiFeO 3 film annealed at 600 °C. This was attributed to the asymmetrical contact between top and bottom interfaces as well as the distinct oxygen vacancy density verified by XPS. Furthermore, the modification of Schottky-like barrier due to the drift of oxygen vacancies was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices.

  17. Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

    Science.gov (United States)

    Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

    2017-05-01

    Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

  18. Growth hormone pulsatility profile characteristics following acute heavy resistance exercise.

    Science.gov (United States)

    Nindl, B C; Hymer, W C; Deaver, D R; Kraemer, W J

    2001-07-01

    This investigation examined the hypothesis that acute heavy resistance exercise (AHRE) would increase overnight concentrations of circulating human growth hormone (hGH). Ten men (22 +/- 1 yr, 177 +/- 2 cm, 79 +/- 3 kg, 11 +/- 1% body fat) underwent two overnight blood draws sampled every 10 min from 1700 to 0600: a control and an AHRE condition. The AHRE was conducted from 1500 to 1700 and was a high-volume, multiset exercise bout. Three different immunoassays measured hGH concentrations: the Nichols immunoradiometric assay (Nichols IRMA), National Institute of Diabetes and Digestive and Kidney Diseases radioimmunoassay (NIDDK RIA), and the Diagnostic Systems Laboratory immunofunctional assay (DSL IFA). The Pulsar peak detection system was used to evaluate the pulsatility profile characteristics of hGH. Maximum hGH was lower in the exercise (10.7 microg/l) vs. the control (15.4 microg/l) condition. Mean pulse amplitude was lower in the exercise vs. control condition when measured by the Nichols IRMA and the DSL IFA. A differential pattern of release was also observed after exercise in which hGH was lower in the first half of sleep but higher in the second half. We conclude that AHRE does influence the temporal pattern of overnight hGH pulsatility. Additionally, because of the unique molecular basis of the DSL IFA, this influence does have biological relevance because functionally intact molecules are affected.

  19. Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shunts.

    Science.gov (United States)

    Ou, Xin; Shuai, Yao; Luo, Wenbo; Siles, Pablo F; Kögler, Reinhard; Fiedler, Jan; Reuther, Helfried; Zhou, Shengqiang; Hübner, René; Facsko, Stefan; Helm, Manfred; Mikolajick, Thomas; Schmidt, Oliver G; Schmidt, Heidemarie

    2013-12-11

    A controlled shunting of polycrystalline oxide thin films on the nanometer length scale opens the door to significantly modify their transport properties. In this paper, the low energy Ar(+) irradiation induced shunting effect of forming-free, non-volatile resistive switching in polycrystalline BiFeO3 thin film capacitor-like structures with macroscopic bottom and top contacts was investigated. Oxygen atoms at the BiFeO3 surface are preferentially sputtered by Ar(+) ion irradiation and oxygen vacancies and a metallic Bi phase are formed at the surface of the BiFeO3 thin film before deposition of the top contacts. A phenomenological model is that of nanoscale shunt resistors formed in parallel to the actual BiFeO3 thin film capacitor-like structure. This model fits the noticeable increase of the retention stability and current density after irradiation. The formation of stable and conductive shunts is further evidenced by conductive atomic force microscopy measurements.

  20. Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density.

    Science.gov (United States)

    Al-Haddad, Ahmed; Wang, Chengliang; Qi, Haoyuan; Grote, Fabian; Wen, Liaoyong; Bernhard, Jörg; Vellacheri, Ranjith; Tarish, Samar; Nabi, Ghulam; Kaiser, Ute; Lei, Yong

    2016-09-07

    Resistive switching random access memories (RRAM) have attracted great scientific and industrial attention for next generation data storage because of their advantages of nonvolatile properties, high density, low power consumption, fast writing/erasing speed, good endurance, and simple and small operation system. Here, by using a template-assisted technique, we demonstrate a three-dimensional highly ordered vertical RRAM device array with density as high as that of the nanopores of the template (10(8)-10(9) cm(-2)), which can also be fabricated in large area. The high crystallinity of the materials, the large contact area and the intimate semiconductor/electrode interface (3 nm interfacial layer) make the ultralow voltage operation (millivolt magnitude) and ultralow power consumption (picowatt) possible. Our procedure for fabrication of the nanodevice arrays in large area can be used for producing many other different materials and such three-dimensional electronic device arrays with the capability to adjust the device densities can be extended to other applications of the next generation nanodevice technology.

  1. The Switching Generator: New Clock-Controlled Generator with Resistance against the Algebraic and Side Channel Attacks

    Directory of Open Access Journals (Sweden)

    Jun Choi

    2015-06-01

    Full Text Available Since Advanced Encryption Standard (AES in stream modes, such as counter (CTR, output feedback (OFB and cipher feedback (CFB, can meet most industrial requirements, the range of applications for dedicated stream ciphers is decreasing. There are many attack results using algebraic properties and side channel information against stream ciphers for hardware applications. Al-Hinai et al. presented an algebraic attack approach to a family of irregularly clock-controlled linear feedback shift register systems: the stop and go generator, self-decimated generator and alternating step generator. Other clock-controlled systems, such as shrinking and cascade generators, are indeed vulnerable against side channel attacks. To overcome these threats, new clock-controlled systems were presented, e.g., the generalized alternating step generator, cascade jump-controlled generator and mutual clock-controlled generator. However, the algebraic attack could be applied directly on these new systems. In this paper, we propose a new clock-controlled generator: the switching generator, which has resistance to algebraic and side channel attacks. This generator also preserves both security properties and the efficiency of existing clock-controlled generators.

  2. Supramolecular Self-Assembly and Dual-Switch Vapochromic, Vapoluminescent, and Resistive Memory Behaviors of Amphiphilic Platinum(II) Complexes.

    Science.gov (United States)

    Li, Yongguang; Chen, Ling; Ai, Yeye; Hong, Eugene Yau-Hin; Chan, Alan Kwun-Wa; Yam, Vivian Wing-Wah

    2017-10-04

    A series of amphiphilic platinum(II) complexes with tridentate N-donor ligands has been synthesized and characterized. Different supramolecular architectures are constructed using the amphiphilic molecules as the building blocks through the formation of Pt···Pt and π-π stacking interactions in aqueous media. The aggregation-deaggregation-aggregation self-assembly behavior together with obvious spectroscopic changes could be fine-tuned by the addition of THF in aqueous media. More interestingly, one of the complexes is found to show fast response and high selectivity toward alcohol and water vapors with good reversibility, leading to drastic color and luminescence changes, and hence unique dual switching behavior, with the water molecules readily displaced by the alcohol vapor. Rapid writing and erasure have been realized via the control of a jet or a stream of alcohol vapor flow. In addition, it has been employed as active materials in the fabrication of small-molecule solution-processable resistive memory devices, exhibiting stable and promising binary memory performance with threshold voltages of ca. 3.4 V, high ON/OFF ratios of up to 10 5 and long retention times of over 10 4 s. The vapochromic and vapoluminescent materials are demonstrated to have potential applications in chemosensing, logic gates, VOC monitoring, and memory functions.

  3. Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents

    Science.gov (United States)

    Qi, Yanfei; Zhao, Ce Zhou; Liu, Chenguang; Fang, Yuxiao; He, Jiahuan; Luo, Tian; Yang, Li; Zhao, Chun

    2018-04-01

    In this study, the influence of the Ti and TiN top electrodes on the switching behaviors of the Al2O3/Pt resistive random access memory devices with various compliance currents (CCs, 1-15 mA) has been compared. Based on the similar statistical results of the resistive switching (RS) parameters such as V set/V reset, R HRS/R LRS (measured at 0.10 V) and resistance ratio with various CCs for both devices, the Ti/Al2O3/Pt device differs from the TiN/Al2O3/Pt device mainly in the forming process rather than in the following switching cycles. Apart from the initial isolated state, the Ti/Al2O3/Pt device has the initial intermediate state as well. In addition, its forming voltage is relatively lower. The conduction mechanisms of the ON and OFF state for both devices are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Therefore, with the combined modulations of the CCs and the stop voltages, the TiN/Al2O3/Pt device is more stable for nonvolatile memory applications to further improve the RS performance.

  4. Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Suhas [Hewlett Packard Labs, Palo Alto, CA (United States); Davila, Noraica [Hewlett Packard Labs, Palo Alto, CA (United States); Wang, Ziwen [Stanford Univ., CA (United States); Huang, Xiaopeng [Hewlett Packard Labs, Palo Alto, CA (United States); Strachan, John Paul [Hewlett Packard Labs, Palo Alto, CA (United States); Vine, David [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); David Kilcoyne, A. L. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Nishi, Yoshio [Stanford Univ., CA (United States); Stanley Williams, R. [Hewlett Packard Labs, Palo Alto, CA (United States)

    2016-11-24

    Here we analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (< 3 μW) and energy (< 200 fJ per bit per μm2), low read-power (~nW), and high endurance ( > millions of cycles). To understand their physico-chemical operating mechanisms, we performed in operando synchrotron X-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). Lastly, these results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications.

  5. Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory

    Science.gov (United States)

    Banerjee, Writam; Liu, Qi; Long, Shibing; Lv, Hangbing; Liu, Ming

    2017-08-01

    The attractive usability of quantum phenomena in futuristic devices is possible by using zero-dimensional systems like nanocrystals (NCs). The performance of nonvolatile flash memory devices has greatly benefited from the use of NCs over recent decades. The quantum abilities of NCs have been used to improve the reliability of flash devices. Its appeal is extended to the design of emerging devices such as resistive random-access memory (RRAM), a technology where the use of silicon is optional. Here, we are going to review the recent progress in the design, characterization, and utilization of NCs in RRAM devices. We will first introduce the physical design of the RRAM devices using NCs and the improvement of electrical performance in NC-RRAM over conventional ones. In particular, special care has been taken to review the ways of development provided by the NCs in the RRAM devices. In a broad sense, the NCs can play a charge trapping role in the NC-RRAM structure or it can be responsible for the localization and improvement of the stability of the conductive filament or it can play a part in the formation of the conductive filament chain by the NC migration under applied bias. Finally, the scope of NCs in the RRAM devices has also been discussed.

  6. Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory

    International Nuclear Information System (INIS)

    Banerjee, Writam; Liu, Qi; Long, Shibing; Lv, Hangbing; Liu, Ming

    2017-01-01

    The attractive usability of quantum phenomena in futuristic devices is possible by using zero-dimensional systems like nanocrystals (NCs). The performance of nonvolatile flash memory devices has greatly benefited from the use of NCs over recent decades. The quantum abilities of NCs have been used to improve the reliability of flash devices. Its appeal is extended to the design of emerging devices such as resistive random-access memory (RRAM), a technology where the use of silicon is optional. Here, we are going to review the recent progress in the design, characterization, and utilization of NCs in RRAM devices. We will first introduce the physical design of the RRAM devices using NCs and the improvement of electrical performance in NC-RRAM over conventional ones. In particular, special care has been taken to review the ways of development provided by the NCs in the RRAM devices. In a broad sense, the NCs can play a charge trapping role in the NC-RRAM structure or it can be responsible for the localization and improvement of the stability of the conductive filament or it can play a part in the formation of the conductive filament chain by the NC migration under applied bias. Finally, the scope of NCs in the RRAM devices has also been discussed. (topical review)

  7. Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

    Directory of Open Access Journals (Sweden)

    Yuehua Dai

    2016-08-01

    Full Text Available The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained.

  8. Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlO{sub x}/TaO{sub x}/TiN structure

    Energy Technology Data Exchange (ETDEWEB)

    Roy, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333, Taiwan (China); Maikap, S., E-mail: sidhu@mail.cgu.edu.tw [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333, Taiwan (China); Sreekanth, G.; Dutta, M.; Jana, D. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333, Taiwan (China); Chen, Y.Y.; Yang, J.R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

    2015-07-15

    Highlights: • Cu:AlO{sub x} alloy is used for the first time to have defective TaO{sub x} film. • A relation in between formation voltage and RESET current has been developed. • A switching mechanism based on a thinner with dense Cu filament is demonstrated. • Good uniformity with yield of >90% and long cycles using 1 ms pulse are obtained. - Abstract: Improved resistive switching phenomena such as device-to-device uniformity, lower formation voltage (2.8 V) and RESET current, >500 program/erase cycles, longer read endurance of >10{sup 6} cycles with a program/erase pulse width of 1 μs, and data retention of >225 h under a low current compliance of 300 μA have been discussed by using Cu-Al alloy in Cu:AlO{sub x}/TaO{sub x}/TiN conductive bridging resistive random access memory (CBRAM) device for the first time. The switching mechanism is based on a thinner with dense Cu filament formation/dissolution through the defects in the Cu:AlO{sub x}/TaO{sub x}/TiN structure owing to enhance memory characteristics. These characteristics have been confirmed by measuring randomly picked 100 devices having via-hole size of 0.4 × 0.4 μm{sup 2}. The Cu-Al alloy becomes Cu:AlO{sub x} buffer layer and Ta{sub 2}O{sub 5} becomes TaO{sub x} switching layer owing to Gibbs free energy dependency. All layers and elements are observed by high-resolution transmission electron microscope (HRTEM) image and energy dispersive X-ray spectroscopy (EDX). By developing a numerical equation in between RESET current and formation voltage, it is found that a higher rate of Cu migration is observed owing to both the defective switching layer and larger size, which results a lower formation voltage and RESET current of the Cu:AlO{sub x}/TaO{sub x}/TiN structure, as compared to Cu/Ta{sub 2}O{sub 5}/TiN under external positive bias on the Cu electrode. This simple Cu:AlO{sub x}/TaO{sub x}/TiN CBRAM device is useful for future nanoscale non-volatile memory application.

  9. Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application

    Directory of Open Access Journals (Sweden)

    Zhenhua Tang

    2013-12-01

    Full Text Available The Ce and Mn co-doped BiFeO3 (BCFMO thin films were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel method. The unipolar resistive switching (URS and bipolar resistive switching (BRS behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large ROFF/RON ratio (>80, long retention time (>105 s and low programming voltages (<1.5 V. Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC and Schottky emission were observed as the conduction mechanisms of the devices.

  10. Characteristics of Drug Resistant Tuberculosis in Sanatoria of North Korea.

    Science.gov (United States)

    Jung, Jihee; Jegal, Yangjin; Ki, Moran; Shin, Young Jeon; Kim, Cheon Tae; Shim, Tae Sun; Sung, Nackmoon

    2017-07-01

    Although several reports about drug-resistant tuberculosis (TB) in North Korea have been published, a nationwide surveillance on this disease remains to be performed. This study aims to analyze the drug resistance patterns of Mycobacterium tuberculosis among the patients in the sanatoria of North Korea, especially during the period when second-line drugs (SLDs) had not yet been officially supplied to this country. The Eugene Bell Foundation (EBF) transferred 947 sputum specimens obtained from 667 patients from 2007 to 2009 to the Clinical Research Center, Masan National Tuberculosis Hospital (MNTH), South Korea. Four hundred ninety-two patients were culture positive for TB (73.8%). Drug susceptibility test (DST) was performed for the bacilli isolated from 489 patients. Over 3 quarters of the cases (76.9%) were multidrug-resistant (MDR)-TB. Additionally, 2 patients had extremely drug-resistant (XDR)-TB. Very high resistance to first-line drugs and low resistance to fluoroquinolones (FQs) and injectable drugs (IDs) except for streptomycin (S) were detected. A small but significant regional variation in resistance pattern was observed. Big city regions had higher rate of MDR-TB, higher resistance to FQs and IDs than relatively isolated regions. In conclusion, significant number of drug-resistant TB was detected in North Korean sanatoria, and small but significant regional variations in resistance pattern were noticeable. However, the data in this study do not represent the nationwide drug resistance pattern in North Korea. Further large-scale evaluations are necessary to estimate the resistance pattern of TB in North Korea. © 2017 The Korean Academy of Medical Sciences.

  11. Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

    Science.gov (United States)

    Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Lim, Donghwan; Han, Hoonhee; Chae, Myeong Gyoon; Lee, Jaeho; Ha, Beom Gil; Choi, Changhwan

    2018-03-01

    We report a modulation of oxygen vacancies profile in atomic layer deposition (ALD) HfO2-x thin films by reducing oxidant pulse time (0.7 s-0.1 s) and study its effect on resistive switching behavior with a Ti/HfO2-x/Pt structure. Hf 4f spectra of x-ray photoelectron microscopy (XPS) and depth profile confirm varied oxygen vacancies profiles by shifts of binding energies of Hf 4f5/2 and Hf 4f7/2 main peaks and its according HfO2-x sub-oxides for each device. The ultraviolet photoelectron spectroscopy (UPS) confirms different electron affinity (χ) of HfO2 and HfO2-x thin films, implying that barrier height at Ti/oxide interface is reduced. Current transport mechanism is dictated by Ohmic conduction in fully oxidized HfO2 thin films - Device A (0.7 s) and by Trap Filled Space Charge Limited Conduction (TF-SCLC) in less oxidized HfO2-x thin films - Device B (0.3 s) and Device C (0.1 s). A switching mechanism related to the oxygen vacancies modulation in Ti/HfO2-x/Pt based resistive random access memory (RRAM) devices is used to explain carefully notified current transport mechanism variations from device-to-device. A proper endurance and long-time retention characteristics of the devices are also obtained.

  12. Scanning Kelvin Probe Microscopy Investigation of the Role of Minority Carriers on the Switching Characteristics of Organic Field-Effect Transistors.

    Science.gov (United States)

    Hu, Yuanyuan; Pecunia, Vincenzo; Jiang, Lang; Di, Chong-An; Gao, Xike; Sirringhaus, Henning

    2016-06-01

    A method based on scanning Kelvin probe microscopy is developed to probe the effects of minority carriers on the switching characteristics of organic field-effect transistors. The mobility of the minority carriers is extracted and the role they play in screening of the gate potential in the OFF state and in recombination of trapped majority carriers trapped after an ON state is understood. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Resistant hypertension, patient characteristics, and risk of stroke.

    Directory of Open Access Journals (Sweden)

    Chen-Ying Hung

    Full Text Available Little is known about the prognosis of resistant hypertension (RH in Asian population. This study aimed to evaluate the impacts of RH in Taiwanese patients with hypertension, and to ascertain whether patient characteristics influence the association of RH with adverse outcomes.Patients aged ≥45 years with hypertension were identified from the National Health Insurance Research Database. Medical records of 111,986 patients were reviewed in this study, and 16,402 (14.6% patients were recognized as having RH (continuously concomitant use of ≥3 anti-hypertensive medications, including a diuretic, for ≥2 years. Risk of major adverse cardiovascular events (MACE, a composite of all-cause mortality, acute coronary syndrome, and stroke [included both fatal and nonfatal events] in patients with RH and non-RH was analyzed. A total of 11,856 patients experienced MACE in the follow-up period (average 7.1±3.0 years. There was a higher proportion of females in the RH group, they were older than the non-RH (63.1 vs. 60.5 years patients, and had a higher prevalence of cardiovascular co-morbidities. Overall, patients with RH had higher risks of MACE (adjusted HR 1.17; 95%CI 1.09-1.26; p<0.001. Significantly elevated risks of stroke (10,211 events; adjusted HR 1.17; 95%CI 1.08-1.27; p<0.001, especially ischemic stroke (6,235 events; adjusted HR 1.34; 95%CI 1.20-1.48; p<0.001, but not all-cause mortality (4,594 events; adjusted HR 1.06; 95%CI 0.95-1.19; p = 0.312 or acute coronary syndrome (2,145 events; adjusted HR 1.17; 95%CI 0.99-1.39; p = 0.070 were noted in patients with RH compared to those with non-RH. Subgroup analysis showed that RH increased the risks of stroke in female and elderly patients. However, no significant influence was noted in young or male patients.Patients with RH were associated with higher risks of MACE and stroke, especially ischemic stroke. The risks were greater in female and elderly patients than in male or young

  14. WTC rat has unique characteristics such as resistant to streptozotocin

    OpenAIRE

    Nagaki, Yoshiaki; Ito, Koichi; Kuwahara, Masayoshi

    2016-01-01

    Because we found that WTC rats might be resistant to streptozotocin (STZ), we have elucidated the mechanisms of resistant to the diabetogenic effects of STZ in the WTC rats. Dose response to STZ was evaluated with glucose levels. No significant changes in glucose level to STZ administration were observed in WTC rats. Insulin secretion by suppling glucose was preserved in WTC rats even after STZ administration. Although there was no significant difference in gene expression of both GLUT2 and K...

  15. Hybrid switch for resonant power converters

    Science.gov (United States)

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  16. Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure

    Science.gov (United States)

    Chakrabarti, Somsubhra; Panja, Rajeswar; Roy, Sourav; Roy, Anisha; Samanta, Subhranu; Dutta, Mrinmoy; Ginnaram, Sreekanth; Maikap, Siddheswar; Cheng, Hsin-Ming; Tsai, Ling-Na; Chang, Ya-Ling; Mahapatra, Rajat; Jana, Debanjan; Qiu, Jian-Tai; Yang, Jer-Ren

    2018-03-01

    Understanding of resistive switching mechanism through H2O2 sensing and improvement of switching characteristics by using TaOx-based material in W/Al2O3/TaOx/TiN structure have been reported for the first time. Existence of amorphous Al2O3/TaOx layer in the RRAM devices has been confirmed by transmission electron microscopy. By analyzing the oxidation states of Ta2+/Ta5+ for TaOx switching material and W0/W6+ for WOx layer at the W/TaOx interface through X-ray photoelectron spectroscopy and H2O2 sensing, the reduction-oxidation mechanism under Set/Reset occurs only in the TaOx layer for the W/Al2O3/TaOx/TiN structures. This leads to higher Schottky barrier height at the W/Al2O3 interface (0.54 eV vs. 0.46 eV), higher resistance ratio, and long program/erase endurance of >108 cycles with 100 ns pulse width at a low operation current of 30 μA. Stable retention of more than 104 s at 85 °C is also obtained. Using conduction mechanism and reduction-oxidation reaction, current-voltage characteristic has been simulated. Both TaOx and WOx membranes have high pH sensitivity values of 47.65 mV/pH and 49.25 mV/pH, respectively. Those membranes can also sense H2O2 with a low concentration of 1 nM in an electrolyte-insulator-semiconductor structure because of catalytic activity, while the Al2O3 membrane does not show sensing. The TaOx material in W/Al2O3/TaOx/TiN structure does not show only a path towards high dense, small size memory application with understanding of switching mechanism but also can be used for H2O2 sensors.

  17. Resistance switching mechanism of La{sub 0.8}Sr{sub 0.2}MnO{sub 3−δ} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Luo, X.D. [School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331 (China); Chongqing Key Laboratory of Nano/Micro Composite Materials and Devices, Chongqing 401331 (China); Gao, R.L., E-mail: gaorongli2008@163.com [School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331 (China); Chongqing Key Laboratory of Nano/Micro Composite Materials and Devices, Chongqing 401331 (China); Fu, C.L.; Cai, W.; Chen, G.; Deng, X.L. [School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331 (China); Chongqing Key Laboratory of Nano/Micro Composite Materials and Devices, Chongqing 401331 (China); Zhang, H.R; Sun, J.R. [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing 100190 (China)

    2016-02-15

    Effects of oxygen vacancies on the electrical transport properties of oxygen stoichiometric La{sub 0.8}Sr{sub 0.2}MnO{sub 3} and oxygen-deficient La{sub 0.8}Sr{sub 0.2}MnO{sub 3−δ} films have been investigated. The result presents that the oxygen-deficient films annealed in vacuum show obvious increase of resistance and lattice parameter. With the sweeping voltage or temperature increasing, the resistance exhibits obvious bipolar switching effect, no forming process was needed. Oxygen deficiency in the annealed film leads to the formation of a structural disorder in the Mn–O–Mn conduction channel due to the accumulation of oxygen vacancies under high external electric field or temperatures and hence is believed to be responsible for the bipolar resistance switching effect and the enhanced resistivity compared with oxygen stoichiometric La{sub 0.8}Sr{sub 0.2}MnO{sub 3} film. These results may be important for practical applications in photoelectric or storage devices and point to a useful direction for other oxidizing materials.

  18. Resistance switching mechanism of La0.8Sr0.2MnO3−δ thin films

    International Nuclear Information System (INIS)

    Luo, X.D.; Gao, R.L.; Fu, C.L.; Cai, W.; Chen, G.; Deng, X.L.; Zhang, H.R; Sun, J.R.

    2016-01-01

    Effects of oxygen vacancies on the electrical transport properties of oxygen stoichiometric La 0.8 Sr 0.2 MnO 3 and oxygen-deficient La 0.8 Sr 0.2 MnO 3−δ films have been investigated. The result presents that the oxygen-deficient films annealed in vacuum show obvious increase of resistance and lattice parameter. With the sweeping voltage or temperature increasing, the resistance exhibits obvious bipolar switching effect, no forming process was needed. Oxygen deficiency in the annealed film leads to the formation of a structural disorder in the Mn–O–Mn conduction channel due to the accumulation of oxygen vacancies under high external electric field or temperatures and hence is believed to be responsible for the bipolar resistance switching effect and the enhanced resistivity compared with oxygen stoichiometric La 0.8 Sr 0.2 MnO 3 film. These results may be important for practical applications in photoelectric or storage devices and point to a useful direction for other oxidizing materials.

  19. Resin duct characteristics associated with tree resistance to bark beetles across lodgepole and limber pines.

    Science.gov (United States)

    Ferrenberg, Scott; Kane, Jeffrey M; Mitton, Jeffry B

    2014-04-01

    Bark beetles have recently killed billions of trees, yet conifer defenses are formidable and some trees resist attack. A primary anti-insect defense of pines is oleoresin from a system of resin ducts throughout the tree. Resin defense traits are heritable, and evidence suggests that resin duct characteristics are associated with resistance to insects. However, comparisons of resin ducts in trees killed by bark beetles to trees that resisted attack are unavailable. We compared vertical resin duct characteristics (number, density, and size) and growth rates from trees that were "resistant" (survived mass attack) versus "susceptible" (killed by attack) to bark beetles in lodgepole (Pinus contorta) and limber (Pinus flexilis) pines. Resistant trees of both species had significantly more resin ducts in recent growth than susceptible trees. Discriminant analysis (DA) correctly categorized 84% of lodgepole and 92% of limber pines as susceptible/resistant based on combinations of resin duct and growth characteristics from recent 5- through 20-year growth intervals. DA models using measures from only the most recent 5 years of growth correctly categorized 72 and 81% of lodgepole and limber pines, respectively. Comparing resistant to susceptible trees independent of species identity led to the correct categorization of 82% of trees based on factors from 5- to 20-year intervals, and 73% of trees using only resin duct counts from the most recent 5 years. We conclude that resin duct characteristics can be used to assess tree resistance to bark beetles across pine species, and offer a metric for management to enhance pest resistance.

  20. Testing and Modeling of Mechanical Characteristics of Resistance Welding Machines

    DEFF Research Database (Denmark)

    Wu, Pei; Zhang, Wenqi; Bay, Niels

    2003-01-01

    The dynamic mechanical response of resistance welding machine is very important to the weld quality in resistance welding especially in projection welding when collapse or deformation of work piece occurs. It is mainly governed by the mechanical parameters of machine. In this paper, a mathematical...... model for characterizing the dynamic mechanical responses of machine and a special test set-up called breaking test set-up are developed. Based on the model and the test results, the mechanical parameters of machine are determined, including the equivalent mass, damping coefficient, and stiffness...

  1. The effect of a Ta oxygen scavenger layer on HfO2-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport.

    Science.gov (United States)

    Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; Nakamura, Hisao; Asai, Yoshihiro; Heinonen, Olle

    2016-03-14

    Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer" between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies the heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO2/TiN heterostructures with and without a Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces the Schottky barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high- and low-resistance states. Finally, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO2 in the presence of the Ta layer. By providing a fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and offering significant benefits to society.

  2. Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack

    International Nuclear Information System (INIS)

    Wu Xing; Pey, Kin-Leong; Raghavan, Nagarajan; Liu, Wen-Hu; Li Xiang; Bai Ping; Zhang Gang; Bosman, Michel

    2011-01-01

    We apply our understanding of the physics of failure in the post-breakdown regime of high-κ dielectric-based conventional logic transistors having a metal–insulator–semiconductor (MIS) structure to interpret the mechanism of resistive switching in resistive random-access memory (RRAM) technology metal–insulator–metal (MIM) stacks. Oxygen vacancies, gate metal migration and metal filament formation in the gate dielectric which constitute the chemistry of breakdown in the post-breakdown stage of logic gate stacks are attributed to be the mechanisms responsible for the SET process in RRAM technology. In this paper, we draw an analogy between the breakdown study in logic devices and filamentation physics in resistive non-volatile memory.

  3. Estimation of Parasitic Resistance of Electrolytic Capacitor and Filter Inductor and Prediction of Input Filter Induced Oscillations in a Switch-Mode Magnet Power Supply

    Directory of Open Access Journals (Sweden)

    Rajul Lal Gour

    2016-01-01

    Full Text Available In switch-mode power converters with large ratings, it is important to be able to predict the parasitic resistances associated with circuit elements such as electrolytic capacitor and filter inductor in the initial converter design stage itself to avoid the cost and time associated with actual design, prototype fabrication, and testing of these components. Knowing the values of parasitic elements is also important as they decide the possibility of closed-loop instability, besides affecting the other circuit parameters. In this paper, a way to estimate the equivalent series resistance of electrolytic capacitor and the winding resistance of filter inductor is proposed leading to their closed form expressions in terms of system parameters. Using these, procedure to predict the closed-loop instability induced due to the input filter is exemplified with illustrative calculations.

  4. Switching Characteristics and High-Temperature Dielectric Relaxation Behaviours of Pb(Zn1/3Nb2/3)0.91Ti0.09O₃ Single Crystal.

    Science.gov (United States)

    Zhu, Zhi; Tang, Xingui; Jiang, Yanping; Liu, Qiuxiang; Zhang, Tianfu; Li, Wenhua

    2017-03-28

    This work evaluated the resistance switching characteristics in the (100)-oriented Pb(Zn 1/3 Nb 2/3 ) 0.91 Ti 0.09 O₃ (PZNT) single crystal. The current hysteresis can be closely related to the ferroelectric polarization and we provided a possible explanation using a model about oxygen vacancies to analyze the mechanism of switching. The obvious frequency dispersion of the relative permittivity signified the relaxer-type behavior of the sample. The value of the relaxation parameter γ = 1.48 was estimated from the linear fit of the modified Curie-Weiss law, indicating the relaxer nature. High-temperature dielectric relaxation behaviors were revealed in the temperature region of 400-650 °C. In addition, under the measuring frequency of 10 kHz, ε r was tunable by changing the electric field and the largest tunability of ε r reached 14.78%. At room temperature, the high pyroelectric coefficient and detectivity figure of merit were reported.

  5. Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory.

    Science.gov (United States)

    Li, Leilei; Liu, Yang; Teng, Jiao; Long, Shibing; Guo, Qixun; Zhang, Meiyun; Wu, Yu; Yu, Guanghua; Liu, Qi; Lv, Hangbing; Liu, Ming

    2017-12-01

    Conductive bridge random access memory (CBRAM) has been extensively studied as a next-generation non-volatile memory. The conductive filament (CF) shows rich physical effects such as conductance quantization and magnetic effect. But so far, the study of filaments is not very sufficient. In this work, Co/HfO 2 /Pt CBRAM device with magnetic CF was designed and fabricated. By electrical manipulation with a partial-RESET method, we controlled the size of ferromagnetic metal filament. The resistance-temperature characteristics of the ON-state after various partial-RESET behaviors have been studied. Using two kinds of magnetic measurement methods, we measured the anisotropic magnetoresistance (AMR) of the CF at different temperatures to reflect the magnetic structure characteristics. By rotating the direction of the magnetic field and by sweeping the magnitude, we obtained the spatial direction as well as the easy-axis of the CF. The results indicate that the easy-axis of the CF is along the direction perpendicular to the top electrode plane. The maximum magnetoresistance was found to appear when the angle between the direction of magnetic field and that of the electric current in the CF is about 30°, and this angle varies slightly with temperature, indicating that the current is tilted.

  6. Characteristics of extended-spectrum cephalosporin-resistant and isolates from horses

    OpenAIRE

    Vo, An T.T.; Van Duijkeren, Engeline; Fluit, Ad C.; Gaastra, Wim

    2007-01-01

    Characteristics of extended-spectrum cephalosporin-resistant Escherichia coli and Klebsiella pneumoniae isolates from horses NETHERLANDS (Vo, An T.T.) NETHERLANDS Received: 2007-01-25 Revised: 2007-04-11 Accepted: 2007-04-17

  7. Ultraviolet-assisted direct patterning and low-temperature formation of flexible ZrO2 resistive switching arrays on PET/ITO substrates

    Science.gov (United States)

    Li, Lingwei; Chen, Yuanqing; Yin, Xiaoru; Song, Yang; Li, Na; Niu, Jinfen; Wu, Huimin; Qu, Wenwen

    2017-12-01

    We demonstrate a low-cost and facile photochemical solution method to prepare the ZrO2 resistive switching arrays as memristive units on flexible PET/ITO substrates. ZrO2 solution sensitive to UV light of 337 nm was synthesized using zirconium n-butyl alcohol as the precursor, and benzoylacetone as the complexing agent. After the dip-coated ZrO2 gel films were irradiated through a mask under the UV lamp (with wavelength of 325–365 nm) at room temperature and rinsed in ethanol, the ZrO2 gel arrays were obtained on PET/ITO substrates. Subsequently, the ZrO2 gel arrays were irradiated by deep UV light of 254 and 185 nm at 150 °C, resulting in the amorphous ZrO2 memristive micro-arrays. The ZrO2 units on flexible PET/ITO substrates exhibited excellent memristive properties. A high ratio of 104 of on-state and off-state resistance was obtained. The resistive switching behavior of the flexible device remained stable after being bent for 103 times. The device showed stable flexibility up to a minimum bending diameter of 1.25 cm.

  8. The HARP resistive plate chambers: Characteristics and physics performance

    International Nuclear Information System (INIS)

    Ammosov, V.; Boyko, I.; Chelkov, G.; Dedovitch, D.; Dumps, R.; Dydak, F.; Elagin, A.; Gapienko, V.; Gostkin, M.; Guskov, A.; Kroumchtein, Z.; Koreshev, V.; Linssen, L.; Nefedov, Yu.; Nikolaev, K.; Semak, A.; Sviridov, Yu.; Usenko, E.; Wotschack, J.; Zaets, V.; Zhemchugov, A.

    2007-01-01

    The HARP Resistive Plate Chamber (RPC) system was designed for time-of-flight measurement in the large-angle acceptance region of the HARP spectrometer. It comprised 46 four-gap glass RPCs covering an area of ∼8m 2 . The design of the RPCs, their operation, intrinsic properties, and system performance are described. The intrinsic time resolution of the RPCs is better than 130ps leading to a system time resolution of ∼175ps

  9. Characteristic diversity and antimicrobial resistance of Salmonella from gastroenteritis.

    Science.gov (United States)

    Luo, Yunchun; Yi, Wen; Yao, Yuzhou; Zhu, Ni; Qin, Pengfei

    2018-04-01

    Salmonella is a leading cause of foodborne disease worldwide and may cause to gastroenteritis. The aim of this study was to determine the prevalence, serotypes, virulence genes, molecular subtyping, and antibiotic resistance phenotype of Salmonella from gastroenteritis in Hubei, China. Of 500 patients stools samples collected from January 2015 to January 2016, 52 (10.40%) samples were contaminated by Salmonella. The results showed that most of the isolates were positive for eight virulence genes that appear on pathogenicity islands, prophages, plasmid, and fimbrial. A total of twelve serotypes were found. Antimicrobial susceptibility results indicated that most strains were resistant to ampicillin (57.69%), kanamycin (53.85%), and tetracycline (40.38%). There were 33 STs on MLST types, and were grouped into two clusters. Thus, our findings provided insights into the dissemination of antibiotic resistant strains, genetic diversity, and improved our knowledge of microbiological risk assessment in Salmonella from gastroenteritis. Copyright © 2017 Japanese Society of Chemotherapy and The Japanese Association for Infectious Diseases. Published by Elsevier Ltd. All rights reserved.

  10. On the invariance conditions of corrosion cracking resistance characteristics

    International Nuclear Information System (INIS)

    Romaniv, O.N.; Nikiforchin, G.N.; Student, A.Z.

    1981-01-01

    The aim of the study is to check the invariance of kinetic diagrams of corrosion cracking and threshold levels Ksub(ISCC) (the threshold level of stress intensity factor of long statistic cracking resistance) if the generally accepted condition of plane strain (t) through sample thickness is met: t >= A (Ksub(IC)/σsub(0.2))sup(2) where A - is the factor which value lies within 0.5-6 limits. The 45KhN2MFA hardened and tempered at 200 deg C structural steel has been investigated. It is stated that fracture toughness invariance condition for a number of materials depends on material type and its structure. Subcritical crack propagation kinetics and Ksub(ISCC) parameter of high-tensile martensitic structure steel are sensitive to the size of original austenitic grain. Heat treatment for coarse grain produces a favourable effect on corrosion cracking resistance of such steel; the formation of austenitic grain boundaries of tooth shape results in an additional increase of corrosion crack propagation resistance. A technique based on the determination of the yielding of samples with a crack propagating along a curvilinear trajectory has turned out to be efficient when estimating the effective factor of stress intensity in the corrosion crack top

  11. Characteristics and overcome of the resistance to chemotherapeutic agents

    International Nuclear Information System (INIS)

    Hong, Weon Seon; Im, Young Hyuck; Kim, Young Sun

    1993-01-01

    Although the clinical use of colony-stimulating factor (CSF) improves the therapeutic results, there have been a lot of evidences that CSF may stimulate the growth of cancer cells. This study was conducted to investigate the effects of granulocytemacrophage(GM)-CSF and granulocyte(G)-CSF on the colony formations in eight human cancer cell lines. The stimulatory effects of GM-CSF and G-CSF on the colony formation were evaluated in human tumor colony assay against four human cancer cell lines, four sublines resistant to adriamycin or cisplatin : PC-9 and PC-14 (pulmonary adenoca), MKN-45 and KATO III (gastric adenoca), PC/ADM and PC/CDDP (sublines of PC-14 resistant to adriamycin and cisplatin, respectively), MKN/ADM and MKN/CDDP (sublines of MKN-45 resistant to adriamycin and cisplatin, respectively). Cancer cells were plated at concentrations of 1x10 3 and 1x10 5 cells/well in the upper layer. Two kinds of GM-CSF (LBD-005 and CSF 39-300) and two kinds of G-CSF (Grasin and Neutrogin) were tested by the addition of final concentrations of GM-CSF and G-CSF (0.01, 0.1 and 1.0 μg/ml) to the lower layer to allow continuous exposure for 14 days. The colony formations (%) of eight cell lines tested were 85-113% and 92-106% in wells plated at the concentrations (/well) of 1x10 3 and 1x10 5 plated, respectively, in all cell lines compared to those of control wells. These results suggest that GM-CSF and G-CSF dose not directly stimulate the growth of cancer cells in all cell lines tested. (Author)

  12. The HARP resistive plate chambers: Characteristics and physics performance

    CERN Document Server

    Ammosov, V; Chelkov, G; Dedovitch, D; Dydak, F; Elagin, A; Gapienko, V; Gostkin, M; Guskov, A; Koreshev, V; Kroumchtein, Z; Nefedov, Yu; Nikolaev, K; Semak, A; Sviridov, Yu; Usenko, E; Wotschack, J; Zaets, V; Zhemchugov, A

    2009-01-01

    The HARP resistive plate chamber (RPC) system was designed for time-of-flight measurement in the large-angle acceptance region of the HARP spectrometer. It comprised 46 four-gap glass RPCs covering an area of . The design of the RPCs, their operation, intrinsic properties, and system performance are described. The intrinsic time resolution of the RPCs is 127 ps leading to a system time-of-flight resolution of 175 ps. It is argued that gross differences between pion and proton timing in multi-gap timing RPCs, reported recently in the literature, do not exist.

  13. Modeling and control of threshold voltage based on pull-in characteristic for micro self-locked switch

    Science.gov (United States)

    Deng, Jufeng; Hao, Yongping; Liu, Shuangjie

    2017-09-01

    Micro self-locked switches (MSS), where execution voltage corresponds to the output signal, are efficient and convenient platforms for sensor applications. The proper functioning of these sensing devices requires driving accurate displacement under execution voltage. In this work, we show how to control the actuating properties of MSSS. This switch comprises microstructures of various shapes with dimensions from 3.5 to 180 μm, which are optimized to encode a desired manufacture deviation by means of mathematical model of threshold voltage. Compared with pull-in voltage, threshold voltage is more easy to control the pull-in instability point by theoretical analysis. With the help of advanced manufacture technology, switch is processed in accordance with the proposed control method. Then, experimental results show that it is better, which have been validated by corresponding experiments. In addition, they can be known from experiments that the manufacturing technology is advanced and feasible, and its high resilience and stably self-locked function can achieve instantaneously sensing.

  14. Estimation of heavy metal-contaminated soils' mechanical characteristics using electrical resistivity.

    Science.gov (United States)

    Chu, Ya; Liu, Songyu; Wang, Fei; Cai, Guojun; Bian, Hanliang

    2017-05-01

    Under the process of urbanization in China, more and more attention has been paid to the reuse of heavy metal-contaminated sites. The shear characteristics of heavy metal-contaminated soils are investigated by electrical detection in this paper. Three metal ions (Zn 2+ , Cd 2+ , and Pb 2+ ) were used, the metal concentrations of which are 50, 166.67, 500, 1666.67, and 5000 mg/kg, respectively. Direct shear tests were used to investigate the influence of heavy metal ions on the shear characters of soil samples. It is found that with the addition of heavy metal ions, the shear strength, cohesion, and friction angle of contaminated soils are higher than the control samples. The higher concentration of heavy metal ions penetrated in soils, the higher these engineering characteristics of contaminated soils observed. In addition, an electrical resistivity detection machine is used to evaluate the shear characteristics of contaminated soils. The electrical resistivity test results show that there is a decreasing tendency of resistivity with the increase of heavy metal ion concentrations in soils. Compared with the electrical resistivity and the shear characteristics of metal-contaminated soils, it is found that, under fixed compactness and saturation, shear strength of metal-contaminated soils decreased with the increase of resistivity. A basic linear relationship between C/log(N + 10) and resistivity can be observed, and there is a basic linear relationship between φ/log(N + 10) and resistivity. Besides, a comparison of the measured and predicted shear characteristics shows a high accuracy, indicating that the resistivity can be used to evaluate the shear characteristics of heavy metal contaminated soils.

  15. Interplay of cross-plane polaronic transport and resistive switching in Pt–Pr0.67Ca0.33MnO3–Pt heterostructures

    International Nuclear Information System (INIS)

    Scherff, M; Hoffmann, J; Meyer, B; Danz, Th; Jooss, Ch

    2013-01-01

    The identification of the cross-plane electric transport mechanisms in different resistance states of metal–oxide sandwich structures is essential for gaining insights into the mechanisms of resistive switching (RS). Here, we present a systematic study of cross-plane electric transport properties of Pr 0.67 Ca 0.33 MnO 3 (PCMO) thin films sandwiched by precious Pt metal electrodes. We observe three different transport regimes: ohmic, nonlinear and RS. The nonlinear regime is associated with colossal magneto-resistance (CMR) and colossal electro-resistance (CER) effects. In contrast to RS, the CMR and CER are volatile resistance effects which persist only during application of strong magnetic or electric fields and they are restricted to low temperatures. At low current densities, the device resistance is dominated by small polaron hopping transport of the PCMO film. At higher electric current densities near the switching threshold, the interface resistance starts to dominate and remarkably also exhibits thermally activated transport properties. Our studies also shed light onto the interplay of colossal resistance effects and RS: at low temperatures, RS can be only induced by reduction of the PCMO resistivity through CMR and CER. This clearly demonstrates the key role of the current density for controlling the amplitude of non-volatile resistive changes. Conversely, the CMR can be used as a probe for the switching induced changes in disorder and correlations. At small switching amplitudes, we observe slight changes in polaron activation energy which can be attributed to changes at the interface. If the switching amplitude exceeds 1000% and more, the CMR effect in the device can be reversibly changed. This indicates persistent changes in electronic or lattice structure of large regions within the PCMO film. (paper)

  16. Frequency of ABL gene mutations in chronic myeloid leukemia patients resistant to imatinib and results of treatment switch to second-generation tyrosine kinase inhibitors.

    Science.gov (United States)

    Marcé, Silvia; Zamora, Lurdes; Cabezón, Marta; Xicoy, Blanca; Boqué, Concha; Fernández, Cristalina; Grau, Javier; Navarro, José-Tomás; Fernández de Sevilla, Alberto; Ribera, Josep-Maria; Feliu, Evarist; Millá, Fuensanta

    2013-08-04

    Tyrosine kinase inhibitors (TKI) have improved the management of patients with chronic myeloid leukemia (CML). However, a significant proportion of patients do not achieve the optimal response or are resistant to TKI. ABL kinase domain mutations have been extensively implicated in the pathogenesis of TKI resistance. Treatment with second-generation TKI has produced high rates of hematologic and cytogenetic responses in mutated ABL patients. The aim of this study was to determine the type and frequency of ABL mutations in patients who were resistant to imatinib or had lost the response, and to analyze the effect of second-generation TKI on their outcome. The presence of ABL mutations in 45 CML patients resistant to imatinib was evaluated by direct sequencing and was correlated with the results of the cytogenetic study (performed in 39 cases). The outcome of these patients after therapy with nilotinib or dasatinib was analyzed. ABL mutations were detected in 14 out of 45 resistant patients. Patients with clonal cytogenetic evolution tended to develop mutations more frequently than those without clonal evolution. Nine out of the 15 patients with ABL mutation responded to a treatment switch to nilotinib (n=4), dasatinib (n=2), interferon (n=1) or hematopoietic stem cell transplantation (n=2). The frequency of ABL mutations in CML patients resistant to imatinib is high and is more frequent among those with clonal cytogenetic evolution. The change to second-generation TKI can overcome imatinib resistance in most of the mutated patients. Copyright © 2012 Elsevier España, S.L. All rights reserved.

  17. The Usability of Different Skid Resistance Characteristics in Road Assessment

    Science.gov (United States)

    Kováč, Matúš; Kotek, Peter

    2014-12-01

    The article was created as a reaction on the request of the Slovak Road Administration, whether it would be possible to evaluate level of friction on the road network only by using laser equipped device Profilograph GE, instead of by using longitudinal friction coefficient measuring device Skiddometer BV11, which is slow, much more difficult on operation and it is necessary to fulfil the water tank for measurements. In order to find out the answer, there were evaluated measurements performed on road sections in Slovakia for the past few years. The main goal was to compare results obtained by both devices, and to find a relevant correlation between them. For better understanding of the problematic and for the demonstration of disadvantages of some texture characteristics, there are performed a comparisons of the different parameters evaluated on model surface profiles in the end of this work.

  18. The Usability of Different Skid Resistance Characteristics in Road Assessment

    Directory of Open Access Journals (Sweden)

    Kováč Matúš

    2014-12-01

    Full Text Available The article was created as a reaction on the request of the Slovak Road Administration, whether it would be possible to evaluate level of friction on the road network only by using laser equipped device Profilograph GE, instead of by using longitudinal friction coefficient measuring device Skiddometer BV11, which is slow, much more difficult on operation and it is necessary to fulfil the water tank for measurements. In order to find out the answer, there were evaluated measurements performed on road sections in Slovakia for the past few years. The main goal was to compare results obtained by both devices, and to find a relevant correlation between them. For better understanding of the problematic and for the demonstration of disadvantages of some texture characteristics, there are performed a comparisons of the different parameters evaluated on model surface profiles in the end of this work.

  19. Phenotypic and genotypic characteristics of antibiotic resistance of commensal Escherichia coli isolates from healthy pigs

    Directory of Open Access Journals (Sweden)

    Mazurek Justyna

    2014-06-01

    Full Text Available The objective of the study was to examine the characteristics of the resistance profiles of Escherichia coli isolated from healthy pigs from three farms in Western Poland. The sensitivity to 13 antimicrobial agents was tested by a disk diffusion method, and the presence of 13 resistance genes was determined by PCR. The majority of the isolates were multi-resistant. The most common multi-resistance patterns were streptomycin, trimethoprim, sulfisoxazole, ampicillin, tetracycline. Although some resistance genes, such as strA/strB, blaTEM, sul1, sul2, and tetA, were equally represented in isolates from each farm, differences in the distribution of tetB and tetC, hfrV, dhfrXII, and sul1 resistance genes were observed among the isolates from different farms. Approximately one-third (35.9% of the isolates possessed a class 1 integron. The four major different variable regions of the class 1 integron contained streptomycin (aadA1, aadA2, and aadA5 and/or trimethoprim (dhfrI, dhfrV and dhfrXVII, and/or sulphonamides (sul1 resistance genes. The results of this study emphasise that uncontrolled use of antibiotics causes the development of resistance and provides the evidence of frequent occurrence of more than one gene encoding the resistance to the same antimicrobial agent in the multi-resistant strains.

  20. Characteristics of Vancomycin-Resistant Enterococcus Strains in the West Balkans: A First Report.

    Science.gov (United States)

    Jakovac, Sanja; Bojić, Elma Ferić; Ibrišimović, Monia Avdić; Tutiš, Borka; Ostojić, Maja; Hukić, Mirsada

    2017-01-01

    Vancomycin-resistant enterococci are among the major causes of nosocomial infections and represent a growing problem in many European countries. Among the most common enterococcal isolates, Enterococcus faecium is considered to be the reservoir of VanA and VanB-mediated resistance to glycopeptides. Enterococci with VanA-mediated resistance can transfer resistance genes to other enterococci and gram-positive bacteria. Hence, monitoring and surveillance of vancomycin-resistant enterococci (VREs) are crucial for the prevention of the spread of glycopeptide resistance. No reports have yet been published that document the resistance rates and typization of VREs in the region of Bosnia and Herzegovina as well as Croatia. In this study, 64 clinical enterococcal strains that were isolated in clinical centers, Mostar, Sarajevo, and Zagreb, were studied and findings regarding characteristics of vancomycin-resistant strains found in the West Balkan region are reported for the first time. All of the strains were identified using conventional phenotypic methods, and the resistance to glycopeptides was determined using the disk diffusion method, Vitek 2, and genotypic Enterococcus assay. The results of genotyping showed that 40 strains were identified as VREs (30% Enterococcus faecalis and 70% E. faecium), while the sensitivity of the phenotypic methods was 87.5%. Furthermore, VanA and VanB resistance types were found in Bosnia and Herzegovina and Croatia, with slightly higher prevalence of the latter (72.5%) over the former (27.5%).

  1. Investigation of corrosion resistance of alloys with high mechanical characteristics in some environments of food industry

    International Nuclear Information System (INIS)

    Tremoureux, Yves

    1978-01-01

    This research thesis aimed at improving knowledge in the field of stress-free corrosion of alloys with high mechanical characteristics in aqueous environments, at highlighting some necessary aspects of their behaviour during cleaning or disinfection, and at selecting alloys which possess a good stress-free corrosion resistance in view of a later investigation of their stress corrosion resistance. After a presentation of the metallurgical characteristics of high mechanical strength alloys and the report of a bibliographical study on corrosion resistance of these alloys, the author presents and discusses the results obtained in the study of a possible migration of metallic ions in a milk product which is submitted to a centrifugation, and of the corrosion resistance of selected alloys with respect to the different media they will be in contact with during ultra-centrifugation. The following alloys have been used in this research: Marval 18, Marphynox, Marval X12, 17-4PH steel, Inconel 718 [fr

  2. Early-switch/early-discharge opportunities for hospitalized patients with methicillin-resistant Staphylococcus aureus complicated skin and soft tissue infections: proof of concept in the United Arab Emirates

    Directory of Open Access Journals (Sweden)

    El Houfi A

    2015-06-01

    Full Text Available Ashraf El Houfi,1 Nadeem Javed,2 Caitlyn T Solem,3 Cynthia Macahilig,4 Jennifer M Stephens,3 Nirvana Raghubir,5 Richard Chambers,6 Jim Z Li,7 Seema Haider81Dubai Hospital, Dubai, UAE; 2Rashid Hospital, Dubai, UAE; 3Pharmerit International, Bethesda, MD, USA; 4Medical Data Analytics, Parsippany, NJ, USA; 5Pfizer, New York, NY, USA; 6Pfizer, Collegeville, PA, USA; 7Pfizer, La Jolla, CA, USA; 8Pfizer, Groton, CT, USAObjectives: To describe real-world treatment patterns and health care resource use and to estimate opportunities for early-switch (ES from intravenous (IV to oral (PO antibiotics and early-discharge (ED for patients hospitalized in the United Arab Emirates (UAE with methicillin-resistant Staphylococcus aureus (MRSA complicated skin and soft tissue infections.Methods: This retrospective observational medical chart review study enrolled physicians from four UAE sites to collect data for 24 patients with documented MRSA complicated skin and soft tissue infections, hospitalized between July 2010 and June 2011, and discharged alive by July 2011. Data include clinical characteristics and outcomes, hospital length of stay (LOS, MRSA-targeted IV and PO antibiotic use, and ES and ED eligibility using literature-based and expert-validated criteria.Results: Five included patients (20.8% were switched from IV to PO antibiotics while being inpatients. Actual length of MRSA-active treatment was 10.8±7.0 days, with 9.8±6.6 days of IV therapy. Patients were hospitalized for a mean 13.9±9.3 days. The most frequent initial MRSA-active therapies used were vancomycin (37.5%, linezolid (16.7%, and clindamycin (16.7%. Eight patients were discharged with MRSA-active antibiotics, with linezolid prescribed most frequently (n=3; 37.5%. Fifteen patients (62.5% met ES criteria and potentially could have discontinued IV therapy 8.3±6.0 days sooner, and eight (33.3% met ED criteria and potentially could have been discharged 10.9±5.8 days earlier

  3. Molecular wires, switches and memories

    Science.gov (United States)

    Chen, Jia

    Molecular electronics, an emerging field, makes it possible to build individual molecules capable of performing functions identical or analogous to present- day conductors, switches, or memories. These individual molecules, with a nano-meter scale characteristic length, can be designed and chemically synthesized with specific atoms, geometries and charge distribution. This thesis focuses on the design, and measurements of molecular wires, and related strategically engineered structures-molecular switches and memories. The experimental system relies on a thermodynamically driven self-assembling process to attach molecules onto substrate surfaces without intervention from outside. The following topics will be discussed: directed nanoscale manipulation of self-assembled molecules using scanning tunneling microscope; investigation on through-bond transport of nanoscale symmetric metal/conjugated self- assembled monolayers (SAM)/metal junctions, where non- Ohmic thermionic emission was observed to be the dominant process, with isocyanide-Pd contacts showing the lowest thermionic barrier of 0.22 eV; the first realization of robust and large reversible switching behavior in an electronic device that utilizes molecules containing redox centers as the active component, exhibiting negative differential resistance (NDR) and large on-off peak-to-valley ratio (PVR); observation of erasable storage of higher conductivity states in these redox- center containing molecular devices, and demonstration of a two-terminal electronically programmable and erasable molecular memory cell with long bit retention time.

  4. Exposure characteristics of positive tone electron beam resist containing p-chloro-α-methylstyrene

    Science.gov (United States)

    Ochiai, Shunsuke; Takayama, Tomohiro; Kishimura, Yukiko; Asada, Hironori; Sonoda, Manae; Iwakuma, Minako; Hoshino, Ryoichi

    2017-07-01

    The positive tone resist consisted of methyl-α-chloroacrylate (ACM) and α-methylstyrene (MS) has higher sensitivity and higher dry etching resistance than poly (methylmethacrylate) (PMMA) due to the presence of a chlorine atom and a phenyl group. Copolymers consisted of ACM and p-chloro-α-methylstyrene (PCMS), where the additional chlorine atom is introduced in phenyl group compared with ACM-MS resist are synthesized and their exposure characteristics are investigated. ACM-PCMS resist with the ACM:PCMS composition ratio of 49:51 indicates the high solubility for amyl acetate developer. As the ACM composition ratio increases, the solubility of ACM-PCMS resist is suppressed. In both ACM-PCMS and ACM-MS resists, the sensitivity decreases while the contrast increases with increasing ACM ratio. When the composition ratio of ACM:PCMS is 69:31, 100/100 nm line and space pattern having a good shape is obtained at 120 μC/cm2 which is comparable to the required exposure dose for conventional ACM-MS resist with ACM:MS=50:50. Dry etching resistance of ACM:PCMS resists for Ar gas is also presented.

  5. Physiological and biochemical characteristics of laboratory induced mutants of Botrytis cinerea with resistance to fluazinam.

    Science.gov (United States)

    Shao, Wenyong; Zhang, Yu; Ren, Weichao; Chen, Changjun

    2015-01-01

    Botrytis cinerea is a necrotrophic and filamentous fungus with a high risk of developing resistance to fungicides. The pyridinamine fungicide fluazinam has been reported to have excellent activity against B. cinerea and better effect on controlling gray mold. In this study, the physiological and biochemical characteristics of laboratory-induced mutants of B. cinerea with resistance to fluazinam has been investigated. Compared to the wild-type strains, the fluazinam-resistant mutants had a significant decrease in respiratory rate, glycerol, oxalate, and ATP contents, and an increase in ATPase activity and sensitivity to osmotic pressure, but did not differ in cell membrane permeability. Sequencing indicated that two parental strains and four resistant mutants were identical in the nucleotide sequence of F-ATPase gene. These results will enrich our understanding of the resistance mechanism of B. cinerea to fluazinam. Copyright © 2014 Elsevier Inc. All rights reserved.

  6. The Research on Characteristic Parameters and Resistance Chart of Operation and Maintenance Trimaran in the Sea

    Directory of Open Access Journals (Sweden)

    Chen Yue

    2016-10-01

    Full Text Available The paper determined the volume ratio of the main hull and side hull and their position characteristic parameter of operation and maintenance trimaran. Numerical simulation technology was used to do the analysis and calculation of trimarans which have different volume ratio of the main and side hull, and on this basis, the paper tried different positions of main and side hull, finally got the trimaran with optimum resistance performance and the chart of trimaran resistance estimation, so as to provide a new way in the selection of feature parameter of offshore wind farm maintenance trimaran and its resistance estimation.

  7. Submicrosecond Power-Switching Test Circuit

    Science.gov (United States)

    Folk, Eric N.

    2006-01-01

    A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a

  8. Comparison of Power Supply Pumping of Switch-Mode Audio Power Amplifiers with Resistive Loads and Loudspeakers as Loads

    DEFF Research Database (Denmark)

    Knott, Arnold; Petersen, Lars Press

    2013-01-01

    Power supply pumping is generated by switch-mode audio power amplifiers in half-bridge configuration, when they are driving energy back into their source. This leads in most designs to a rising rail voltage and can be destructive for either the decoupling capacitors, the rectifier diodes...... in the power supply or the power stage of the amplifier. Therefore precautions are taken by the amplifier and power supply designer to avoid those effects. Existing power supply pumping models are based on an ohmic load attached to the amplifier. This paper shows the analytical derivation of the resulting...

  9. Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO3 Junctions

    Science.gov (United States)

    Wang, Shengkai; Sun, Xianwen; Li, Guanghui; Jia, Caihong; Li, Guoqiang; Zhang, Weifeng

    2018-01-01

    Pt/Nd:SrTiO3 (STO)/In devices were fabricated by depositing Schottky-contact Pt and Ohmic-contact In electrodes on a single crystal STO with Nd doping. The Pt/Nd:STO/In devices show multi-level resistance-switching (RS) memory and memory-state-dependent photovoltage (PV) effects, which can be controlled by the applied pulse width or magnitude. Both the RS and PV are related to the bias-induced modulation of the interface barrier, both in height and width, at the Pt/Nd:STO interface. The results establish a strong connection between the RS/PV effects and the modulation of the Nd:STO interface triggered by applied electric field and provide a new route by using an open-circuit voltage for non-destructively sensing multiple non-volatile memory states.

  10. Resistivity and AE Response Characteristics in the Failure Process of CGB under Uniaxial Loading

    Directory of Open Access Journals (Sweden)

    Tingye Qi

    2017-01-01

    Full Text Available To understand the characteristics of the acoustic emission (AE and electrical resistivity of cemented coal gangue backfill (CGB under uniaxial compression, the variations in these characteristics at 1 day, 3 days, and 7 days are analyzed by means of a stress-strain-resistivity-AE test, and the microperformances are investigated. The research results indicate that the AE can reflect the initiation and propagation of cracks and later explain the variation of the resistivity of the specimens under the uniaxial loading. The cumulative energy curve of AE is approximately two straight lines corresponding to the peak stress, and the difference in the linear slope gradually decreased with the increasing curing time due to the lower pore solution content and the compact pore structure. The relationships between the stress and resistivity and the loading condition before and after the peak stress at different curing times were established. Therefore, it is of great significance to predict the stability of the filling body by monitoring the AE and resistivity variations of the filling body. In addition, it is possible to calculate the roof stress using the relation equation between the resistivity and stress.

  11. The influence of series resistance on the I-V characteristics of CdTe ...

    African Journals Online (AJOL)

    The influence of series resistance (Rs) on the current (I) – voltage(V) characteristics of evaporated cadmium telluride(CdTe) thin films has been investigated. CdTe films of thickness 1000Å were deposited by thermal evaporation in a vacuum of about 10-5torr. For the I – V measurements, the two point probe configuration ...

  12. Pod Characteristics of Cocoa (Theobroma cacao L. Related to Cocoa Pod Borer Resistance (Conopomorpha cramerella Snell.

    Directory of Open Access Journals (Sweden)

    Agung Wahyu Soesilo

    2015-03-01

    Full Text Available AbstractThe characteristics of pod related to cocoa pod borer resistance (CPB, Conopomorpha cramerella Snell. had been identified in a series study. This research has objective to evaluate performance of the characteristics using more diverse of genetic background to select criteria for selection. Genetic materials for this study were 25 cocoa clones which be planted in Central Sulawesi for resistant evaluation. Field evaluation of the resistance were assessed using the variable of the percentage of unextractable bean, number of entry and exit hole larvae by which the clones were grouped into 5 groups of resistance. A laboratory works were carried out to assess pod characteristics based on the number of trichome, granule of tannin and thickness the lignified-tissue of sclerotic layer using micro-technique method at the different level of pod maturity (3.0; 3.5; 4.0 months. Correlation between groups of those variables was analyzed using Canonical Correlation. The analysis performed a positive association between the thickness of sclerotic layer at the secondary furrow with the number of entry holes and the number of entry holes through sclerotic layer. The thickness performed a higher value of the coefficient in association with the variables of canonical for pod characteristics (0.59; 0.55; 0.43 and the variables of canonical for CPB resistance (0.54; 0.51; 0.39 that would presenting the characteristics of pod related to CPB resistance. Lignification at sclerotic layer was considered as genotypic expressions due to the thickness at the secondary furrow at 3.0, 3.5 and 4.0 months of pod maturity performed high value of broad-sense heritability i.e. 0.75, 0.89 and 0.92 respectively. A qualitative assessment of the lignification clearly differentiate the resistant clones (ARDACIAR 10 with the susceptible clones (ICCRI 04, KW 516 and KW 564.Key words : cocoa pod borer, Theobroma cacao L., pod characteristics, resistance

  13. An inverse switch in DNA base excision and strand break repair contributes to melphalan resistance in multiple myeloma cells.

    Directory of Open Access Journals (Sweden)

    Mirta M L Sousa

    Full Text Available Alterations in checkpoint and DNA repair pathways may provide adaptive mechanisms contributing to acquired drug resistance. Here, we investigated the levels of proteins mediating DNA damage signaling and -repair in RPMI8226 multiple myeloma cells and its Melphalan-resistant derivative 8226-LR5. We observed markedly reduced steady-state levels of DNA glycosylases UNG2, NEIL1 and MPG in the resistant cells and cross-resistance to agents inducing their respective DNA base lesions. Conversely, repair of alkali-labile sites was apparently enhanced in the resistant cells, as substantiated by alkaline comet assay, autoribosylation of PARP-1, and increased sensitivity to PARP-1 inhibition by 4-AN or KU58684. Reduced base-excision and enhanced single-strand break repair would both contribute to the observed reduction in genomic alkali-labile sites, which could jeopardize productive processing of the more cytotoxic Melphalan-induced interstrand DNA crosslinks (ICLs. Furthermore, we found a marked upregulation of proteins in the non-homologous end-joining (NHEJ pathway of double-strand break (DSB repair, likely contributing to the observed increase in DSB repair kinetics in the resistant cells. Finally, we observed apparent upregulation of ATR-signaling and downregulation of ATM-signaling in the resistant cells. This was accompanied by markedly increased sensitivity towards Melphalan in the presence of ATR-, DNA-PK, or CHK1/2 inhibitors whereas no sensitizing effect was observed subsequent to ATM inhibition, suggesting that replication blocking lesions are primary triggers of the DNA damage response in the Melphalan resistant cells. In conclusion, Melphalan resistance is apparently contributed by modulation of the DNA damage response at multiple levels, including downregulation of specific repair pathways to avoid repair intermediates that could impair efficient processing of cytotoxic ICLs and ICL-induced DSBs. This study has revealed several novel

  14. Ground-Fault Characteristic Analysis of Grid-Connected Photovoltaic Stations with Neutral Grounding Resistance

    Directory of Open Access Journals (Sweden)

    Zheng Li

    2017-11-01

    Full Text Available A centralized grid-connected photovoltaic (PV station is a widely adopted method of neutral grounding using resistance, which can potentially make pre-existing protection systems invalid and threaten the safety of power grids. Therefore, studying the fault characteristics of grid-connected PV systems and their impact on power-grid protection is of great importance. Based on an analysis of the grid structure of a grid-connected PV system and of the low-voltage ride-through control characteristics of a photovoltaic power supply, this paper proposes a short-circuit calculation model and a fault-calculation method for this kind of system. With respect to the change of system parameters, particularly the resistance connected to the neutral point, and the possible impact on protective actions, this paper achieves the general rule of short-circuit current characteristics through a simulation, which provides a reference for devising protection configurations.

  15. Switching antidepressants

    African Journals Online (AJOL)

    depressive disorder, with response rates of 50-60%. Switching within or between classes of antidepressants is often required in patients with an insufficient response to SSRIs.12 Because they share a similar mechanism of action, the immediate substitution of one SSRI for another is probably the easiest switching option.

  16. The influence of the Q-switched and free-running Er:YAG laser beam characteristics on the ablation of root canal dentine

    Science.gov (United States)

    Papagiakoumou, Eirini; Papadopoulos, Dimitrios N.; Khabbaz, Marouan G.; Makropoulou, Mersini I.; Serafetinides, Alexander A.

    2004-06-01

    Laser based dental treatment is attractive to many researchers. Lasers in the 3 μm region, as the Er:YAG, are suitable especially for endodontic applications. In this study a pulsed free-running and Q-switched laser was used for the ablation experiments of root canal dentine. The laser beam was either directly focused on the dental tissue or delivered to it through an infrared fiber. For different spatial beam distributions, energies, number of pulses and both laser operations the quality characteristics (crater's shape formation, ablation efficiency and surface characteristics modification) were evaluated using scanning electron microscopy (SEM). The craters produced, generally, reflect the relevant beam profile. Inhomogeneous spatial beam profiles and short pulse duration result in cracks formation and lower tissue removal efficiency, while longer pulse durations cause hard dentine fusion. Any beam profile modification, due to laser characteristics variations and the specific delivering system properties, is directly reflected in the ablation crater shape and the tissue removal efficiency. Therefore, the laser parameters, as fluence, pulse repetition rate and number of pulses, have to be carefully adjusted in relation to the desirable result.

  17. The influence of the Q-switched and free-running Er:YAG laser beam characteristics on the ablation of root canal dentine

    International Nuclear Information System (INIS)

    Papagiakoumou, Eirini; Papadopoulos, Dimitrios N.; Khabbaz, Marouan G.; Makropoulou, Mersini I.; Serafetinides, Alexander A.

    2004-01-01

    Laser based dental treatment is attractive to many researchers. Lasers in the 3 μm region, as the Er:YAG, are suitable especially for endodontic applications. In this study a pulsed free-running and Q-switched laser was used for the ablation experiments of root canal dentine. The laser beam was either directly focused on the dental tissue or delivered to it through an infrared fiber. For different spatial beam distributions, energies, number of pulses and both laser operations the quality characteristics (crater's shape formation, ablation efficiency and surface characteristics modification) were evaluated using scanning electron microscopy (SEM). The craters produced, generally, reflect the relevant beam profile. Inhomogeneous spatial beam profiles and short pulse duration result in cracks formation and lower tissue removal efficiency, while longer pulse durations cause hard dentine fusion. Any beam profile modification, due to laser characteristics variations and the specific delivering system properties, is directly reflected in the ablation crater shape and the tissue removal efficiency. Therefore, the laser parameters, as fluence, pulse repetition rate and number of pulses, have to be carefully adjusted in relation to the desirable result

  18. The influence of the Q-switched and free-running Er:YAG laser beam characteristics on the ablation of root canal dentine

    Energy Technology Data Exchange (ETDEWEB)

    Papagiakoumou, Eirini; Papadopoulos, Dimitrios N.; Khabbaz, Marouan G.; Makropoulou, Mersini I.; Serafetinides, Alexander A

    2004-06-30

    Laser based dental treatment is attractive to many researchers. Lasers in the 3 {mu}m region, as the Er:YAG, are suitable especially for endodontic applications. In this study a pulsed free-running and Q-switched laser was used for the ablation experiments of root canal dentine. The laser beam was either directly focused on the dental tissue or delivered to it through an infrared fiber. For different spatial beam distributions, energies, number of pulses and both laser operations the quality characteristics (crater's shape formation, ablation efficiency and surface characteristics modification) were evaluated using scanning electron microscopy (SEM). The craters produced, generally, reflect the relevant beam profile. Inhomogeneous spatial beam profiles and short pulse duration result in cracks formation and lower tissue removal efficiency, while longer pulse durations cause hard dentine fusion. Any beam profile modification, due to laser characteristics variations and the specific delivering system properties, is directly reflected in the ablation crater shape and the tissue removal efficiency. Therefore, the laser parameters, as fluence, pulse repetition rate and number of pulses, have to be carefully adjusted in relation to the desirable result.

  19. Resistance Switching in Complex Oxides: Improvements in Understanding and Function for Use as Non-Volatile Memory

    Science.gov (United States)

    Young, Kristina Garrison

    2011-12-01

    Pro0.7Ca0.3MnO3 (PCMO) is a complex oxide that is studied for use as a non-volatile memory with potential to replace flash-type memory. PCMO functions as a resistive random access memory (RRAM) whose memory function is due to an oxygen vacancy concentration change that occurs in the top interface of the PCMO during the application of an electric field. The concentration of the oxygen ions/vacancies in this top interface region significantly affects the resistance seen in a simple thin film device. The electric field required to move ions/vacancies within PCMO is generated by a short (ns), low voltage (few V) pulse. During the pulse a high current is seen that is not commensurate with the resistance seen after the removal of the pulse. Additionally, after the removal of the pulse there is a degradation of the resistance state set by the pulse. The high current seen during the pulse has been explored using electrical characterization techniques and is believed to be due to quantum mechanical tunneling through the high resistance interface region. Modeling of conduction values confirms that quantum mechanical tunneling is the source of the high current. The degradation of the state after the removal of the pulse has been improved through the nanostructure modification of the PCMO film. A thin (barrier layer was placed immediately below the interface of the PCMO minimizing the back diffusion of ions/vacancies after removal of the pulse. The modification improved the EPIR ratio, fatigue and retention in PCMO.

  20. [Microbiological characteristics and patterns of resistance in prosthetic joint infections in a referral hospital].

    Science.gov (United States)

    Ortega-Peña, Silvestre; Colín-Castro, Claudia; Hernández-Duran, Melissa; López-Jácome, Esaú; Franco-Cendejas, Rafael

    2015-01-01

    The prosthetic joint infection is the most feared and catastrophic complication for cause severe physical damage to patients and, generates high economic costs. To describe the microbiological characteristics and to determine the resistance pattern in prosthetic joint infections in a reference hospital in Mexico. Patients whose prosthetic devices were withdrawn due to suspicion of septic and aseptic loosening were included. Cultures were performed to identify microorganisms and susceptibility analysis. Of the 111 patients included, 55% were diagnosed with prosthetic joint infection, with the most frequent prosthesis being of the hip (43%). Positive cultures were obtained in 97% of the infected cases, of which 75% were monomicrobial infections. The most frequent bacterial species isolated were: Staphylococcus epidermidis (31%), Enterococcus faecalis (16%), Staphylococcus aureus (13%), and Escherichia coli (8%). The resistance patterns for the Staphylococcus genus were: oxacillin (79%), erythromycin (45%) and ciprofloxacin (37%). Enterococcus faecalis showed a high percentage of resistance to erythromycin and clindamycin (86%), and fluoroquinolones (43%). The large majority (86%) of Escherichia coli were extended spectrum beta-lactamases positive, in addition to having high resistance to fluoroquinolones (86%), trimethoprim/sulfamethoxazole (86%) and gentamicin (72%). The microbiological characteristics found in prosthetic joint infections vary according to the hospitals. In this series, a high proportion of coagulase-negative Staphylococci and Enterococcus spp. were found, as well as a high bacterial resistance. Copyright © 2015 Academia Mexicana de Cirugía A.C. Published by Masson Doyma México S.A. All rights reserved.

  1. Impact of Hypoxia on Drug Resistance and Growth Characteristics of Mycobacterium tuberculosis Clinical Isolates.

    Directory of Open Access Journals (Sweden)

    Zhonghua Liu

    Full Text Available Mycobacterium tuberculosis (MTB is a specific aerobic bacterium, but can survive under hypoxic conditions, such as those in lung cheese necrosis, granulomas, or macrophages. It is not clear whether the drug sensitivity and growth characteristics of MTB under hypoxic conditions are different from those under aerobic conditions. In this study, we examined the drug resistance and growth characteristics of MTB clinical isolates by a large sample of in vitro drug susceptibility tests, using an automatic growth instrument. Under hypoxic conditions, variance in drug resistance was observed in nearly one-third of the MTB strains and was defined as MTB strains with changed drug sensitivity (MTB-CDS. Among these strains, resistance in a considerable proportion of clinical strains was significantly increased, and some strains emerged as multi-drug resistant. Growth test results revealed a high growth rate and large survival number in macrophages under hypoxia in MTB-CDS. According to the results of fluorescence quantitative PCR, the expression of some genes, including RegX3 (involving RIF resistance, Rv0194 (efflux pump gene, four genes related to transcription regulation (KstR, DosR, Rv0081 and WhiB3 and gene related to translation regulation (DATIN, were upregulated significantly under hypoxic conditions compared to that under aerobic conditions (p < 0.05. Thus, we concluded that some MTB clinical isolates can survive under hypoxic conditions and their resistance could change. As for poor clinical outcomes in patients, based on routine drug susceptibility testing, drug susceptibility tests for tuberculosis under hypoxic conditions should also be recommended. However, the detailed mechanisms of the effect of hypoxia on drug sensitivity and growth characteristics of MTB clinical isolates still requires further study.

  2. Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films

    Directory of Open Access Journals (Sweden)

    Jian-Yang Lin

    2014-01-01

    Full Text Available SiO2 or Cu-doped SiO2 (Cu:SiO2 insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS at room temperature. The experimental results show that the room-temperature CVS treatment can effectively affect the current conduction behavior and stabilize the resistive switching of the memory cells. After the CVS, the current conduction mechanisms in the high resistance state during the set process of the Cu/Cu:SiO2/W cell can be changed from Ohm’s law and the space charge limited conduction to Ohm’s law, the Schottky emission, and the space charge limited conduction. Presumably, it is due to the breakage of the conduction filaments during the CVS treatment that the conduction electrons cannot go back to the back electrode smoothly.

  3. Ferroelastically and magnetically co-coupled resistive switching in Nd0.5Sr0.5MnO3/PMN-PT(011) multiferroic heterostructures

    Science.gov (United States)

    Zheng, Ming; Xu, Xiao-Ke; Ni, Hao; Qi, Ya-Ping; Li, Xiao-Min; Gao, Ju

    2018-03-01

    The phase separation, i.e., the competition between coexisting multi-phases, can be adjusted by external stimuli, such as magnetic field, electric field, current, light, and strain. Here, a multiferroic heterostructure composed of a charge-ordered Nd0.5Sr0.5MnO3 thin film and a ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystal is fabricated to investigate the lattice strain and magnetic field co-control of phase separation in resistive switching. The stable and nonvolatile resistance tuning is realized at room temperature using the electric-field-induced reversible ferroelastic strain effect, which can be enhanced by 84% under the magnetic field. Moreover, the magnetoresistance can be effectively tuned by the electrically driven ferroelastic strain. These findings reveal that the ferroelastic strain and the magnetic field strongly correlate with each other and are mediated by phase separation. Our work provides an approach to design strain-engineered multifunctional memory devices based on complex oxides by introducing an extra magnetic field stimulus.

  4. Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices

    Energy Technology Data Exchange (ETDEWEB)

    Matveyev, Yu.; Zenkevich, A. [Moscow Institute of Physics and Technology, 141700 Moscow Region (Russian Federation); NRNU “Moscow Engineering Physics Institute”, 115409 Moscow (Russian Federation); Egorov, K.; Markeev, A. [Moscow Institute of Physics and Technology, 141700 Moscow Region (Russian Federation)

    2015-01-28

    Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO{sub 2}/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO{sub 2} in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO{sub 2}. The memristive properties of ALD grown TiN/HfO{sub 2}/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware.

  5. Early-switch/early-discharge opportunities for hospitalized patients with methicillin-resistant Staphylococcus aureus complicated skin and soft tissue infections: proof of concept in the United Arab Emirates.

    Science.gov (United States)

    El Houfi, Ashraf; Javed, Nadeem; Solem, Caitlyn T; Macahilig, Cynthia; Stephens, Jennifer M; Raghubir, Nirvana; Chambers, Richard; Li, Jim Z; Haider, Seema

    2015-01-01

    To describe real-world treatment patterns and health care resource use and to estimate opportunities for early-switch (ES) from intravenous (IV) to oral (PO) antibiotics and early-discharge (ED) for patients hospitalized in the United Arab Emirates (UAE) with methicillin-resistant Staphylococcus aureus (MRSA) complicated skin and soft tissue infections. This retrospective observational medical chart review study enrolled physicians from four UAE sites to collect data for 24 patients with documented MRSA complicated skin and soft tissue infections, hospitalized between July 2010 and June 2011, and discharged alive by July 2011. Data include clinical characteristics and outcomes, hospital length of stay (LOS), MRSA-targeted IV and PO antibiotic use, and ES and ED eligibility using literature-based and expert-validated criteria. Five included patients (20.8%) were switched from IV to PO antibiotics while being inpatients. Actual length of MRSA-active treatment was 10.8±7.0 days, with 9.8±6.6 days of IV therapy. Patients were hospitalized for a mean 13.9±9.3 days. The most frequent initial MRSA-active therapies used were vancomycin (37.5%), linezolid (16.7%), and clindamycin (16.7%). Eight patients were discharged with MRSA-active antibiotics, with linezolid prescribed most frequently (n=3; 37.5%). Fifteen patients (62.5%) met ES criteria and potentially could have discontinued IV therapy 8.3±6.0 days sooner, and eight (33.3%) met ED criteria and potentially could have been discharged 10.9±5.8 days earlier. While approximately one-fifth of patients were switched from IV to PO antibiotics in the UAE, there were clear opportunities for further optimization of health care resource use. Over half of UAE patients hospitalized for MRSA complicated skin and soft tissue infections could be eligible for ES, with one-third eligible for ED opportunities, resulting in substantial potential for reductions in IV days and bed days.

  6. On interrelation of crack resistance characteristics of metal materials under static and dynamic loading conditions

    International Nuclear Information System (INIS)

    Abramyan, K.G.; Goloveshkin, Yu.V.; Tuzlukova, N.I.

    1984-01-01

    Home and foreign data on crack resistance characteristics of metal structural materials are generalized and analyzed. Dependence between various parameters of material strength and toughness on the one hand and racck resistance on the other hand is established on the basis of the energy concept of the failure mechanics. Effect of the strain rate on σsub(0.2) and Ksub(Ic) values is evaluated. Quanlitative and quantitative relations obtained permit conducting a complex estimation of materials behaviour during static and dynamic loading operations

  7. Pod Characteristics of cocoa (Theobroma cacao L. related to rocoa pod borer resistance.

    Directory of Open Access Journals (Sweden)

    Agung Wahyu Susilo

    2015-04-01

    Full Text Available The characteristics of cocoa (Theobroma cacao L. pod related to cocoa pod borer resistance (CPB had been identified in a series of study. The objective of this research is to evaluate the characteristics of cocoa pod using more diverse of genetic background to obtain selection criteria. Genetic materials for this studywere 25 cocoa clones planted in Central Sulawesi for resistance evaluation. Field evaluation of the resistance were assessed by using variable of the percentage of unextractable beans, number of larvae entry and exit holes by which the clones were grouped into 5 groups of resistance. A laboratory works were carried out to assess pod characteristics based on the number of trichomes, granules of tannin and thickness the lignified-tissue of sclerotic layer using micro-technique method at the different level of pod maturity (3.0; 3.5; 4.0 months. Correlation between groups of those variables was analyzed using canonical correlation. The result performed a positive association between the thickness of sclerotic layer at the secondary furrow with the number of entry holes and the number of entry holes through sclerotic layer. The thickness performed a higher value of the coefficient in association with the variables of canonical for pod characteristics 0.59; 0.55; 0.43 and the variables of canonical correlation for CPB resistance 0.54; 0.51; 0.39 that would presenting the characteristics of pod related to CPB resistance in 3.0, 3.5 and 4.0 months of pod maturity. Lignification at sclerotic layer was considered as genotypic expressions due to the thickness at the secondary furrow at 3.0, 3.5 and 4.0 months of pod maturity performed high value of broad-sense heritability i.e. 0.75, 0.89 and 0.92 respectively. A qualitative assessment of the lignification clearly differentiated the resistant clones of ARDACIAR 10 with the susceptible clones of ICCRI 04, KW 516, and KW 564.

  8. Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application

    Science.gov (United States)

    Ani, M. H.; Helmi, F.; Herman, S. H.; Noh, S.

    2018-01-01

    Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electronic junction as a new type of memristor. Cu2O is a p-type semiconductor oxide, was used as the active layer of memristor. Cu/Cu2O/Au memristor was fabricated by thermal oxidation of copper foil, followed by sputtering of gold. Structural, morphological and memristive properties were characterized using XRD, FESEM, and current-voltage, I-V measurement respectively. Its memristivity was indentified by pinch hysteresis loop and measurement of high resistance state (HRS) and low resistance state (LRS) of the sample. The Cu/Cu2O/Au memristor demonstrates comparable performances to previous studies using other methods.

  9. A conformational switch in the active site of BT_2972, a methyltransferase from an antibiotic resistant pathogen B. thetaiotaomicron.

    Directory of Open Access Journals (Sweden)

    Veerendra Kumar

    Full Text Available Methylation is one of the most common biochemical reactions involved in cellular and metabolic functions and is catalysed by the action of methyltransferases. Bacteroides thetaiotaomicron is an antibiotic-resistant bacterium that confers resistance through methylation, and as yet, there is no report on the structure of methyltransferases from this bacterium. Here, we report the crystal structure of an AdoMet-dependent methyltransferase, BT_2972 and its complex with AdoMet and AdoHcy for B. thetaiotaomicron VPI-5482 strain along with isothermal titration calorimetric assessment of the binding affinities. Comparison of the apo and complexed BT_2972 structures reveals a significant conformational change between open and closed forms of the active site that presumably regulates the association with cofactors and may aid interaction with substrate. Together, our analysis suggests that BT_2972 is a small molecule methyltransferase and might catalyze two O-methylation reaction steps involved in the ubiquinone biosynthesis pathway.

  10. Impetigo in a population over 8.5 years: incidence, fusidic acid resistance and molecular characteristics.

    Science.gov (United States)

    Rørtveit, Sverre; Skutlaberg, Dag Harald; Langeland, Nina; Rortveit, Guri

    2011-06-01

    From around year 2000, impetigo caused by fusidic acid-resistant Staphylococcus aureus was observed in countries of Northern Europe. The bacteria were found to represent a clone, the epidemic European fusidic acid-resistant impetigo clone (EEFIC). This study reports longitudinal data on the incidence and bacteriology of impetigo in a Norwegian island community during the years 2001-09. All encounters with general practitioners regarding impetigo were registered. Bacterial swabs were taken in a high percentage of cases. Annual incidence was calculated. Phenotypic characteristics of the bacteria were determined for the whole period, and in 2008 and 2009 we also performed PFGE and spa typing. Outbreaks of impetigo were observed in 2002, 2003 and 2004, but since then the incidence decreased greatly. S. aureus was cultured from the impetigo site in the majority of cases. The proportion of S. aureus isolates resistant to fusidic acid decreased from 80% in 2002-04 to 45% in 2008-09. For 28 S. aureus isolates analysed by molecular methods in 2008-09, we found that nearly all cases of fusidic acid resistance were due to the presence of the EEFIC. S. aureus resistance to fusidic acid in relation to impetigo is now less frequent in this population than at the start of the century. At present, most S. aureus bacteria resistant to fusidic acid in impetigo belong to the EEFIC.

  11. Toward understanding of the role of reversibility of phenotypic switching in the evolution of resistance to therapy

    OpenAIRE

    Horvath, Denis; Brutovsky, Branislav

    2017-01-01

    Reversibility of state transitions is intensively studied topic in many scientific disciplines over many years. In cell biology, it plays an important role in epigenetic variation of phenotypes, known as phenotypic plasticity. More interestingly, the cell state reversibility is probably crucial in the adaptation of population phenotypic heterogeneity to environmental fluctuations by evolving bet-hedging strategy, which might confer to cancer cells resistance to therapy. In this article, we pr...

  12. Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

    Directory of Open Access Journals (Sweden)

    A. Pergament

    2015-01-01

    Full Text Available Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance, is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.

  13. Clinical characteristics and outcomes of community-acquired methicillin-resistant Staphylococcus aureus septic arthritis

    Directory of Open Access Journals (Sweden)

    Sian Yik Lim

    2017-01-01

    Full Text Available Objective: We investigated the clinical characteristics, treatment patterns and outcomes of community-acquired methicillin resistant Staphylococcus aureus (CA-MRSA septic arthritis. Methods: This was a retrospective chart review of CA-MRSA septic arthritis in a tertiary care hospital from 2000-2013. We compared CA-MRSA septic arthritis cases with HA-MRSA septic arthritis cases to identify important differences between the two groups. Results: We identified 11 cases of CA-MRSA septic arthritis and 34 cases of hospital-acquired methicillin-resistant SA (HA-MRSA septic arthritis. Community-acquired methicillin-resistant Staphylococcus aureus caused 25% of the MRSA septic arthritis cases. Community-acquired methicillin-resistant Staphylococcus aureus septic arthritis occurred in younger patients with fewer comorbidities or risk factors. There was no difference in initial presentation between CA-MRSA and HA-MRSA. Community-acquired methicillin-resistant Staphylococcus aureus patients were less likely to be treated with appropriate antibiotics initially. Community-acquired methicillin-resistant Staphylococcus aureus septic arthritis was associated with increased morbidity with a high percentage of patients developing poor joint outcomes or osteomyelitis complications.  Community-acquired methicillin-resistant Staphylococcus aureus septic arthritis was also associated with increased utilization of health care resources due to long hospital stays, high readmissions rates, and increased requirements for rehabilitation facility placement and home health support. There was no difference in mortality, poor joint outcome, readmissions, and osteomyelitis complications between CA-MRSA septic arthritis and HA-MRSA septic arthritis. Conclusions: Community-acquired methicillin-resistant Staphylococcus aureus septic arthritis is associated with increased morbidity and health care resource utilization. Increased awareness into CA-MRSA as a cause of septic

  14. Ananysis of resistance characteristics of twin-skeg passenger ship based on CFD

    Directory of Open Access Journals (Sweden)

    ZHAO Bingqian

    2017-05-01

    Full Text Available With the implementation and promotion of Rules for Green Ships, more and more attention has been paid by the maritime industry to the ship energy efficiency index. In order to evaluate the function relationship between speed and effective horsepower, and acquire the accurate flow field information of twin-skeg ships, a method for resistance prediction of twin-skeg ships based on the Computational Fluid Dynamics (CFD theory is outlined. Numerical simulation and resistance prediction by FINE/MARINE for a twin-skeg passenger ship advancing at different speeds are carried out respectively. The effects of the mesh characteristics, calculating speed range, and existence of appendages such as rudders on resistance are discussed. Comparisons between present results and corresponding experimental are made, showing that the prediction error can be controlled below 3%. The results demonstrate that the proposed method is efficient enough to be realized and will meet the engineering requirements.

  15. Risk factors for antimicrobial-resistant Neisseria gonorrhoeae and characteristics of patients infected with gonorrhea.

    Science.gov (United States)

    Fuertes de Vega, Irene; Baliu-Piqué, Carola; Bosch Mestres, Jordi; Vergara Gómez, Andrea; Vallés, Xavier; Alsina Gibert, Mercè

    2018-03-01

    There are very few data available regarding risk factors associated with antibiotic resistant-Neisseria gonorrhoeae. A study was conducted on 110 samples from 101 patients with gonococcal infection, in order to describe their characteristics and compare them with the antimicrobial susceptibility profile of their samples. An association was observed between resistant infections and heterosexual men, older age, concurrent sexually transmitted infection, and unsafe sexual behaviors. There is a need for improved data on the risk factors associated with antibiotic resistant gonococcal infection in order to identify risk groups, and to propose public health strategies to control this infection. Copyright © 2016 Elsevier España, S.L.U. and Sociedad Española de Enfermedades Infecciosas y Microbiología Clínica. All rights reserved.

  16. Effect of Fly-Ash on Corrosion Resistance Characteristics of Rebar Embedded in Recycled Aggregate Concrete

    Science.gov (United States)

    Revathi, Purushothaman; Nikesh, P.

    2018-04-01

    In the frame of an extended research programme dealing with the utilization of recycled aggregate in concrete, the corrosion resistance characteristics of rebars embedded in recycled aggregate concrete is studied. Totally five series of concrete mixtures were prepared with fly-ash as replacement for cement in the levels of 10-30% by weight of cement. Corrosion studies by 90 days ponding test, linear polarization test and impressed voltage tests were carried out, in order to investigate whether corrosion behaviour of the rebars has improved due to the replacement of cement with fly-ash. Results showed that the replacement of cement with fly-ash in the range of 20-30% improves the corrosion resistance characteristics of recycled aggregate concrete.

  17. Preparation of Waste GFRP Fiber Reinforced Gypsum Block with Water-resistant and Energy Storage Characteristics

    Directory of Open Access Journals (Sweden)

    Zhang Meng-Meng

    2017-01-01

    Full Text Available Gypsum block possesses good performances such as volume stability, lightweight and thermal insulation, is recognized as typical eco-friendly building material. However, its poor water resistance characteristics restrict the application. The semi-hydrated desulphurization gypsum is modified with steel slag, granulated blast-furnace and carbide slag (SGC composite powder as well as waste glass-reinforced plastic (GFRP fiber, aiming at producing water-resistant gypsum block. The proper mass proportioning of the modified gypsum block is obtained: semi-hydrated desulphurization gypsum 75%, SGC 25% and waste GFRP fiber 1.0%. The product is of softening coefficient of 0.84 and thermal flexural strength of 8.6 MPa. Phase change energy storage material (PCM is used to increase the energy saving characteristics of the block. Compared with ordinary gypsum walls, the modified gypsum block with CA-SA exhibits good energy storage property.

  18. Magnetic switching

    International Nuclear Information System (INIS)

    Kirbie, H.C.

    1989-01-01

    Magnetic switching is a pulse compression technique that uses a saturable inductor (reactor) to pass pulses of energy between two capacitors. A high degree of pulse compression can be achieved in a network when several of these simple, magnetically switched circuits are connected in series. Individual inductors are designed to saturate in cascade as a pulse moves along the network. The technique is particularly useful when a single-pulse network must be very reliable or when a multi-pulse network must operate at a high pulse repetition frequency (PRF). Today, magnetic switches trigger spark gaps, sharpen the risetimes of high energy pulses, power large lasers, and drive high PRF linear induction accelerators. This paper will describe the technique of magnetic pulse compression using simple networks and design equations. A brief review of modern magnetic materials and of their role in magnetic switch design will be presented. 12 refs., 8 figs

  19. Hysteresis and negative differential resistance of the current-voltage characteristic of a water bridge

    Science.gov (United States)

    Oshurko, V. B.; Fedorov, A. N.; Ropyanoi, A. A.; Fedosov, M. V.

    2014-06-01

    It is found experimentally that the properties of nanoporous ion-exchange membranes (hysteresis of the current-voltage characteristic in the solution and negative differential resistance), which have been discussed in recent years, are not associated with the properties of the membrane. It is shown that these effects are also observed in a floating water bridge and in water-filled tubes and are apparently determined by the geometrical shape of the liquid conductor. The observed effects are explained qualitatively.

  20. Streamer model for high voltage water switches

    International Nuclear Information System (INIS)

    Sazama, F.J.; Kenyon, V.L. III

    1979-01-01

    An electrical switch model for high voltage water switches has been developed which predicts streamer-switching effects that correlate well with water-switch data from Casino over the past four years and with switch data from recent Aurora/AMP experiments. Preclosure rounding and postclosure resistive damping of pulseforming line voltage waveforms are explained in terms of spatially-extensive, capacitive-coupling of the conducting streamers as they propagate across the gap and in terms of time-dependent streamer resistance and inductance. The arc resistance of the Casino water switch and of a gas switch under test on Casino was determined by computer fit to be 0.5 +- 0.1 ohms and 0.3 +- 0.06 ohms respectively, during the time of peak current in the power pulse. Energy lost in the water switch during the first pulse is 18% of that stored in the pulseforming line while similar energy lost in the gas switch is 11%. The model is described, computer transient analyses are compared with observed water and gas switch data and the results - switch resistance, inductance and energy loss during the primary power pulse - are presented

  1. Radial Plasma Flow Switch ^=A7

    Science.gov (United States)

    Terry, R. E.; Thornhill, J. W.

    1996-11-01

    A radial plasma flow switch configuration for use with longer quarter cycle time Marx bank drivers is characterized by 2D MHD calculations (MACH 2). A primary plasma armature implodes radially into a trap to establish the conduction phase. A secondary armature born from this plasma then commutes current to the load region at an Alfven speed characteristic of the mass splitting between the trap and the output port. The efficiency of current and energy transfer to simple inductive loads and plasma radiation source (PRS) loads is examined with respect to different models of anomalous resistivity and several geometries for controlling the motion of the primary plasma armature.

  2. Switching dynamics of TaOx-based threshold switching devices

    Science.gov (United States)

    Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

    2018-03-01

    Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

  3. Some Nutritional Characteristics of Enzymatically Resistant Maltodextrin from Cassava (Manihot esculenta Crantz) Starch.

    Science.gov (United States)

    Toraya-Avilés, Rocío; Segura-Campos, Maira; Chel-Guerrero, Luis; Betancur-Ancona, David

    2017-06-01

    Cassava (Manihot esculenta Crantz) native starch was treated with pyroconversion and enzymatic hydrolysis to produce a pyrodextrin and an enzyme-resistant maltodextrin. Some nutritional characteristics were quantified for both compounds. Pyroconversion was done using a 160:1 (p/v) starch:HCl ratio, 90 °C temperature and 3 h reaction time. The resulting pyrodextrin contained 46.21% indigestible starch and 78.86% dietary fiber. Thermostable α-amylase (0.01%) was used to hydrolyze the pyrodextrin at 95 °C for 5 min. The resulting resistant maltodextrin contained 24.45% dextrose equivalents, 56.06% indigestible starch and 86.62% dietary fiber. Compared to the cassava native starch, the pyrodextrin exhibited 56% solubility at room temperature and the resistant maltodextrin 100%. The glycemic index value for the resistant maltodextrin was 59% in healthy persons. Its high indigestible starch and dietary fiber contents, as well as its complete solubility, make the resistant maltodextrin a promising ingredient for raising dietary fiber content in a wide range of foods, especially in drinks, dairy products, creams and soups.

  4. Frictional and heat resistance characteristics of coconut husk particle filled automotive brake pad

    Science.gov (United States)

    Bahari, Shahril Anuar; Chik, Mohd Syahrizul; Kassim, Masitah Abu; Som Said, Che Mohamad; Misnon, Mohd Iqbal; Mohamed, Zulkifli; Othman, Eliasidi Abu

    2012-06-01

    The objective of this study was to determine the friction and heat resistance characteristics of automotive brake pad composed with different sizes and percentages of coconut husk particle. The materials used were phenolic resin (phenol formaldehyde) as binder, copper, graphite and brass as friction producer/modifiers, magnesium oxide as abrasive material, steel and barium sulfate as reinforcement while coconut husk particle as filler. To obtain particle, the coconut husk was ground and dried to 3% moisture content. Then the coconut husk particle was screened using 80 mesh (to obtain coarse dust) and 100 mesh (to obtain fine dust). Different percentages of particle, such as 10 and 30% were used in the mixture of brake pad materials. Then the mixture was hot-pressed to produce brake pad. Chase machine was used to determine the friction coefficient in friction resistance testing, while thermogravimetric analyzer (TGA) machine was used to determine the heat decomposition values in heat resistance testing. Results showed that brake pad with 100 mesh and 10% composition of coconut husk particle showed the highest friction coefficient. For heat resistance, brake pad with 100 mesh and 30% composition of coconut husk dust showed the highest decomposition temperature, due to the high percentage of coconut husk particle in the composition, thus increased the thermal stability. As a comparison, brake pad composed with coconut husk particle showed better heat resistance results than commercial brake pad.

  5. Molecular Characteristics of Methicillin-Resistant Staphylococcus epidermidis on the Abdominal Skin of Females before Laparotomy.

    Science.gov (United States)

    Wang, Pin-Jia; Xie, Cheng-Bin; Sun, Feng-Hui; Guo, Li-Juan; Dai, Min; Cheng, Xi; Ma, Yong-Xin

    2016-06-22

    Staphylococcus epidermidis, especially methicillin-resistant strains, may be the source of surgical site infections and may be a reservoir of staphylococcal cassette chromosome mec (SCCmec) for S. aureus. The aim of this study was to investigate the prevalence of methicillin-resistant S. epidermidis (MRSE) on the abdominal skin of females before laparotomy and determine the molecular characteristics and antimicrobial susceptibility patterns of these isolates. MRSE was found in 54 of 157 isolates based on mecA gene detection, and there was no difference in icaA gene carriage rate between MRSE and methicillin-susceptible S. epidermidis (MSSE) isolates. Antimicrobial susceptibility profiles were determined by broth microdilution antimicrobial susceptibility testing according to the latest CLSI manuals. All MRSE isolates had unfavorable antimicrobial susceptibility patterns. Twenty-three MRSE strains (42.6%) were multi-drug resistant. SCCmec typing and pulsed field gel electrophoresis (PFGE) typing was performed. Thirty-nine (72.2%) had a single SCCmec type, whereas 1.9% had two types. Fourteen strains (25.9%) were non-typeable (NT). The most frequent MRSE genotype was SCCmec type IVa. High diversity with PFGE patterns was obtained for MRSE, and there were no isolates exhibiting identical pulsotype. The results confirm that methicillin-resistant strains are frequently present among S. epidermidis on the abdominal skin of females before laparotomy. Moreover, resistance profiles seem to have no association with the SCCmec types or PFGE types for most common antibiotics.

  6. Molecular Characteristics of Methicillin-Resistant Staphylococcus epidermidis on the Abdominal Skin of Females before Laparotomy

    Directory of Open Access Journals (Sweden)

    Pin-Jia Wang

    2016-06-01

    Full Text Available Staphylococcus epidermidis, especially methicillin-resistant strains, may be the source of surgical site infections and may be a reservoir of staphylococcal cassette chromosome mec (SCCmec for S. aureus. The aim of this study was to investigate the prevalence of methicillin-resistant S. epidermidis (MRSE on the abdominal skin of females before laparotomy and determine the molecular characteristics and antimicrobial susceptibility patterns of these isolates. MRSE was found in 54 of 157 isolates based on mecA gene detection, and there was no difference in icaA gene carriage rate between MRSE and methicillin-susceptible S. epidermidis (MSSE isolates. Antimicrobial susceptibility profiles were determined by broth microdilution antimicrobial susceptibility testing according to the latest CLSI manuals. All MRSE isolates had unfavorable antimicrobial susceptibility patterns. Twenty-three MRSE strains (42.6% were multi-drug resistant. SCCmec typing and pulsed field gel electrophoresis (PFGE typing was performed. Thirty-nine (72.2% had a single SCCmec type, whereas 1.9% had two types. Fourteen strains (25.9% were non-typeable (NT. The most frequent MRSE genotype was SCCmec type IVa. High diversity with PFGE patterns was obtained for MRSE, and there were no isolates exhibiting identical pulsotype. The results confirm that methicillin-resistant strains are frequently present among S. epidermidis on the abdominal skin of females before laparotomy. Moreover, resistance profiles seem to have no association with the SCCmec types or PFGE types for most common antibiotics.

  7. Carriage of antimicrobial resistant Escherichia coli in dogs: Prevalence, associated risk factors and molecular characteristics.

    Science.gov (United States)

    Wedley, Amy L; Dawson, Susan; Maddox, Thomas W; Coyne, Karen P; Pinchbeck, Gina L; Clegg, Peter; Nuttall, Tim; Kirchner, Miranda; Williams, Nicola J

    2017-02-01

    Resistance to antimicrobials, in particular that mediated by extended spectrum β-lactamases (ESBL) and AmpC β-lactamases are frequently reported in bacteria causing canine disease as well as in commensal bacteria, which could be a potential health risk for humans they come into contact with. This cross-sectional study aimed to estimate the prevalence and investigate the molecular characteristics of ESBL and plasmid encoded AmpC (pAmpC)-producing E. coli in the mainland UK vet-visiting canine population and, using responses from detailed questionnaires identify factors associated with their carriage. Faecal samples were cultured for antimicrobial resistant (AMR), ESBL and pAmpC-producing E. coli. A subset of ESBL and pAmpC-producing isolates were subjected to multi-locus sequence typing and DNA microarray analyses. Multivariable logistic regression analysis was used to construct models to identify risk factors associated with multidrug resistant (MDR, resistance to three or more antimicrobial classes), fluoroquinolone resistant, ESBL and AmpC-producing E. coli. AMR E.coli were isolated from 44.8% (n=260) of samples, with 1.9% and 7.1% of samples carrying ESBL and pAmpC-producing E. coli, respectively. MDR E. coli were identified in 18.3% of samples. Recent use of antimicrobials and being fed raw poultry were both identified as risk factors in the outcomes investigated. A number of virulence and resistance genes were identified, including genes associated with extra-intestinal and enteropathogenic E. coli genotypes. Considering the close contact that people have with dogs, the high levels of AMR E. coli in canine faeces may be a potential reservoir of AMR bacteria or resistance determinants. Copyright © 2016. Published by Elsevier B.V.

  8. Phenotypic and genetic characteristics of fluoroquinolone- and methicillin-resistant Staphylococcus aureus.

    Science.gov (United States)

    Moreno-Flores, Antonio; Potel-Alvarellos, Carmen; Otero-Fernández, Susana; Álvarez-Fernández, Maximiliano

    2017-07-20

    Fluoroquinolone resistance in methicillin-resistant Staphylococcus aureus (MRSA) has increased in recent years. The objective of this study was to characterise two MRSA populations, one susceptible to fluoroquinolones and other resistant identifying the clonal types and the differential characteristics of both MRSA populations. Molecular typing using PFGE, MLST, spa and SSCmec was performed on 192 MRSA strains isolated from 2009 to 2011, 49 only oxacillin-resistant (OX-R) and 143 oxacillin and levofloxacin-resistant (OX-R-LEV-R). Mutations that conferred resistance to fluoroquinolones, hypermutable phenotypes and the presence of eight microbial surface components recognising adhesive matrix molecules (MSCRAMMs) were also studied. A statistically significant increase in the OX-R-LEV-R phenotype was observed (p<0.05). The most common clone of the OX-R isolates was sequence type (ST) 8 (32.6%), followed by ST72 (26.5%) and ST5 (26.5%). In the OX-R-LEV-R phenotype, the ST5 clone was the most common (65.7%), followed by ST72 (15.4%), and ST125 (12.6%). All isolates except the ST398 clone carried the SCCmecIVc. Clones ST5, ST72, ST125, and ST30 had hypermutable phenotypes. The ST72 clone and the ST30 clone in the OX-R phenotype harboured the highest number of MSCRAMMs. ST5 and ST72 clones were the most frequent clones identified in OX-R-LEV-R phenotype. Both clones showed a hypermutable phenotype that favours their selection as the fluoroquinolone resistant clones. The genetic relationships identified indicate that OX-R-LEV-R clones have evolved from OX-R MRSA clones. Copyright © 2017 Elsevier España, S.L.U. and Sociedad Española de Enfermedades Infecciosas y Microbiología Clínica. All rights reserved.

  9. Unraveling the resistive switching effect in ZnO/0.5Ba(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}-0.5(Ba{sub 0.7}Ca{sub 0.3})TiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Silva, J.P.B., E-mail: josesilva@fisica.uminho.pt [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); Vorokhta, M.; Dvořák, F. [Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 18000 Prague 8 (Czech Republic); Sekhar, K.C. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Department of Physics, School of Basic and Applied Science, Central University of Tamil Nadu, Thiruvarur 610 101 (India); Matolín, V. [Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 18000 Prague 8 (Czech Republic); Moreira, J. Agostinho [IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); Pereira, M.; Gomes, M.J.M. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2017-04-01

    Highlights: • ZnO/0.5BZT-0.5BCT heterostructures exhibited resistive switching (RS) ratio ≥ 10 4. • Effect of oxygen pressure used in the deposition of ZnO on RS ratio is highlighted. • Determination of the Band alignment in ZnO/0.5BZT-0.5BCT heterojunctions from XPS. • Resistive Switching is explained based on charge coupling effect. - Abstract: This work reports the effect of partial oxygen pressure, used in the deposition of the ZnO layer, on the band alignment at ZnO – 0.5Ba(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}-0.5(Ba{sub 0.7}Ca{sub 0.3})TiO{sub 3} (0.5BZT-0.5BCT) interface and on the resistive switching (RS) behavior of pulsed laser deposited ZnO/0.5BZT-0.5BCT heterostructures. X-ray photoelectron spectroscopy (XPS) has been employed to measure the valence band offset and the conduction band offset of the ZnO/0.5BZT-0.5BCT heterojunctions. The valence and conduction band offsets of the ZnO/0.5BZT-0.5BCT heterostucture with ZnO deposited at 10{sup −2} mbar of partial oxygen pressure were found to be 0.27 and 0.80 eV, respectively. The RS effect in heterostructures is explained on the base of the charge coupling between the switchable polarization of ferroelectric layer and the non-switchable polarization of semiconductor layer. The heterostructure with ZnO deposited at 10{sup −2} mbar of partial oxygen pressure displays optimum RS characteristics, with a switching ratio ≥ 10{sup 4} and excellent retention and endurance characteristics. The optimum RS characteristics are attributed to a good interface quality with enough carrier concentration in ZnO, as evidenced by XPS.

  10. A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process

    Science.gov (United States)

    Hsu, Meng-Yin; Liao, Chu-Feng; Shih, Yi-Hong; Lin, Chrong Jung; King, Ya-Chin

    2017-06-01

    This paper reports a novel full logic compatible 4T2R non-volatile static random access memory (nv-SRAM) featuring its self-inhibit data storing mechanism for in low-power/high-speed SRAM application. With compact cell area and full logic compatibility, this new nv-SRAM incorporates two STI-ReRAMs embedded inside the 4T SRAM. Data can be read/write through a cross-couple volatile structure for maintaining fast accessing speed. Data can be non-volatilely stored in new SRAM cell through a unique self-inhibit operation onto the resistive random access memory (RRAM) load, achieving zero static power during data hold.

  11. Comparison of the physiological characteristics of transgenic insect-resistant cotton and conventional lines.

    Science.gov (United States)

    Li, Xiaogang; Ding, Changfeng; Wang, Xingxiang; Liu, Biao

    2015-03-04

    The introduction of transgenic insect-resistant cotton into agricultural ecosystems has raised concerns regarding its ecological effects. Many studies have been conducted to compare the differences in characteristics between transgenic cotton and conventional counterparts. However, few studies have focused on the different responses of transgenic cotton to stress conditions, especially to the challenges of pathogens. The aim of this work is to determine the extent of variation in physiological characteristics between transgenic insect-resistant cotton and the conventional counterpart infected by cotton soil-borne pathogens. The results showed that the difference in genetic backgrounds is the main factor responsible for the effects on biochemical characteristics of transgenic cotton when incubating with cotton Fusarium oxysporum. However, genetic modification had a significantly greater influence on the stomatal structure of transgenic cotton than the effects of cotton genotypes. Our results highlight that the differences in genetic background and/or genetic modifications may introduce variations in physiological characteristics and should be considered to explore the potential unexpected ecological effects of transgenic cotton.

  12. Treatment of resistant tattoos using a new generation Q-switched Nd:YAG laser: influence of beam profile and spot size on clearance success.

    Science.gov (United States)

    Karsai, Syrus; Pfirrmann, Gudrun; Hammes, Stefan; Raulin, Christian

    2008-02-01

    Multiple treatments of resistant tattoos often result in fibrosis and visible textural changes that lessen response to subsequent treatments. The aim of this study is to evaluate the influence of beam profile and spot size on clearance rates and side effects in the setting of resistant tattoos. Thirty-six professional, black tattoos (32 patients) were treated unsuccessfully with a Q-switched Nd:YAG laser (MedLite C3, HoyaConBio Inc., Fremont, CA). Because of therapy resistance all tattoos were re-treated using a new generation Nd:YAG laser (MedLite C6, HoyaConBio Inc.). Maximum energy fluence (E (max)), mean energy fluence, mean spot size, level of clearance, side effects and beam profile (irradiance distribution) of both laser systems were assessed and evaluated in a retrospective study. All tattoos were previously treated with the C3 laser at 1,064 nm using a mean E(max) of 5.8+/-0.8 J/cm(2) (range 3.8-7.5 J/cm(2)) as compared with a mean E(max) of 6.4+/-1.6 J/cm(2) (range 3.2-9.0 J/cm(2)) during the C6 treatment course. Corresponding spot sizes were larger during C6 treatments as compared with C3 (5.0+/-0.9 and 3.6+/-0.2 mm, respectively). The C6 laser had a "flat top" and homogenous profile regardless of the spot size. For the C3 laser the beam shape was "Gaussian," and the homogeneity was reduced by numerous micro-spikes and micro-nadirs. After the C6 treatment course 33.3% of the tattoos showed clearance of grade 1 (0-25%), 16.7% of grade 2 (26-50%), 16.7% of grade 3 (51-75%), 30.5% of grade 4 (76-95%), 2.8% of grade 5 (96-100%). The total rate of side effects due to C6 treatment was 8.3% in all tattoos (hyperpigmentation 5.6%, hypopigmentation 2.7%, textural changes/scars 0%). This clinical study documents for the first time the impact of a 1,064-nm Nd:YAG laser with a more homogenous beam profile and a larger spot size on the management of resistant tattoos. Only a few treatment sessions were necessary to achieve an additional clearance with a low rate of

  13. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.

    Science.gov (United States)

    Wang, Lai-Guo; Qian, Xu; Cao, Yan-Qiang; Cao, Zheng-Yi; Fang, Guo-Yong; Li, Ai-Dong; Wu, Di

    2015-01-01

    We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3/HfO2/Al2O3 after 600°C post-annealing. The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed. The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.

  14. The characteristics of surface oxidation and corrosion resistance of nitrogen implanted zircaloy-4

    International Nuclear Information System (INIS)

    Tang, G.; Choi, B.H.; Kim, W.; Jung, K.S.; Kwon, H.S.; Lee, S.J.; Lee, J.H.; Song, T.Y.; Shon, D.H.; Han, J.G.

    1997-01-01

    This work is concerned with the development and application of ion implantation techniques for improving the corrosion resistance of zircaloy-4. The corrosion resistance in nitrogen implanted zircaloy-4 under a 120 keV nitrogen ion beam at an ion dose of 3 x 10 17 cm -2 depends on the implantation temperature. The characteristics of surface oxidation and corrosion resistance were analyzed with the change of implantation temperature. It is shown that as implantation temperature rises from 100 to 724 C, the colour of specimen surface changes from its original colour to light yellow at 100 C, golden at 175 C, pink at 300 C, blue at 440 C and dark blue at 550 C. As the implantation temperature goes above 640 C, the colour of surface changes to light black, and the surface becomes a little rough. The corrosion resistance of zircaloy-4 implanted with nitrogen is sensitive to the implantation temperature. The pitting potential of specimens increases from 176 to 900 mV (SCE) as the implantation temperature increases from 100 to 300 C, and decreases from 900 to 90 mV(SCE) as the implantation temperature increases from 300 to 640 C. The microstructure, the distribution of oxygen, nitrogen and carbon elements, the oxide grain size and the feature of the precipitation in the implanted surface were investigated by optical microscope, TEM, EDS, XRD and AES. The experimental results reveal that the ZrO 2 is distributed mainly on the outer surface. The ZrN is distributed under the ZrO 2 layer. The characteristics of the distribution of ZrO 2 and ZrN in the nitrogen-implanted zircaloy-4 is influenced by the implantation temperature of the sample, and in turn the corrosion resistance is influenced. (orig.)

  15. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.

    Science.gov (United States)

    Zhang, Lei; Zhu, Liang; Li, Xiaomei; Xu, Zhi; Wang, Wenlong; Bai, Xuedong

    2017-03-21

    One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p + -Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

  16. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM

    Science.gov (United States)

    Zhang, Lei; Zhu, Liang; Li, Xiaomei; Xu, Zhi; Wang, Wenlong; Bai, Xuedong

    2017-03-01

    One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p+-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

  17. Microscopic origin of read current noise in TaOx-based resistive switching memory by ultra-low temperature measurement

    Science.gov (United States)

    Pan, Yue; Cai, Yimao; Liu, Yefan; Fang, Yichen; Yu, Muxi; Tan, Shenghu; Huang, Ru

    2016-04-01

    TaOx-based resistive random access memory (RRAM) attracts considerable attention for the development of next generation nonvolatile memories. However, read current noise in RRAM is one of the critical concerns for storage application, and its microscopic origin is still under debate. In this work, the read current noise in TaOx-based RRAM was studied thoroughly. Based on a noise power spectral density analysis at room temperature and at ultra-low temperature of 25 K, discrete random telegraph noise (RTN) and continuous average current fluctuation (ACF) are identified and decoupled from the total read current noise in TaOx RRAM devices. A statistical comparison of noise amplitude further reveals that ACF depends strongly on the temperature, whereas RTN is independent of the temperature. Measurement results combined with conduction mechanism analysis show that RTN in TaOx RRAM devices arises from electron trapping/detrapping process in the hopping conduction, and ACF is originated from the thermal activation of conduction centers that form the percolation network. At last, a unified model in the framework of hopping conduction is proposed to explain the underlying mechanism of both RTN and ACF noise, which can provide meaningful guidelines for designing noise-immune RRAM devices.

  18. Antimicrobial susceptibility/resistance and genetic characteristics of Neisseria gonorrhoeae isolates from Poland, 2010-2012

    Science.gov (United States)

    2014-01-01

    Background In Poland, gonorrhoea has been a mandatorily reported infection since 1948, however, the reported incidences are likely underestimated. No antimicrobial resistance (AMR) data for Neisseria gonorrhoeae has been internationally reported in nearly four decades, and data concerning genetic characteristics of N. gonorrhoeae are totally lacking. The aims of this study were to investigate the AMR to previously and currently recommended gonorrhoea treatment options, the main genetic resistance determinant (penA) for extended-spectrum cephalosporins (ESCs), and genotypic distribution of N. gonorrhoeae isolates in Poland in 2010-2012. Methods N. gonorrhoeae isolates cultured in 2010 (n = 28), 2011 (n = 92) and 2012 (n = 108) in Warsaw and Bialystok, Poland, were examined using antimicrobial susceptibility testing (Etest), pyrosequencing of penA and N. gonorrhoeae multi-antigen sequence typing (NG-MAST). Results The proportions of N. gonorrhoeae isolates showing resistance were as follows: ciprofloxacin 61%, tetracycline 43%, penicillin G 22%, and azithromycin 8.8%. No isolates resistant to ceftriaxone, cefixime or spectinomycin were found. However, the proportion of isolates with an ESC MIC = 0.125 mg/L, i.e. at the resistance breakpoint, increased significantly from none in 2010 to 9.3% and 19% in 2012 for ceftriaxone and cefixime, respectively. Furthermore, 3.1% of the isolates showed multidrug resistance, i.e., resistance to ciprofloxacin, penicillin G, azithromycin, and decreased susceptibility to cefixime (MIC = 0.125 mg/L). Seventy-six isolates (33%) possessed a penA mosaic allele and 14 isolates (6.1%) contained an A501V/T alteration in penicillin-binding protein 2. NG-MAST ST1407 (n = 58, 25% of isolates) was the most prevalent ST, which significantly increased from 2010 (n = 0) to 2012 (n = 46; 43%). Conclusions In Poland, the diversified gonococcal population displayed a high resistance to most antimicrobials

  19. Surface-Controlled Metal Oxide Resistive Memory

    KAUST Repository

    Ke, Jr-Jian

    2015-10-28

    To explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM were studied. The thickness-independent resistance and the higher switching probability of ZnO ReRAM with rough surfaces indicate the importance of surface oxygen chemisorption on the switching process. Furthermore, the improvements in switching probability, switching voltage and resistance distribution observed for ReRAM with rough surfaces can be attributed to the stable oxygen adatoms under various ambience conditions. The findings validate the surface-controlled stability and uniformity of ReRAM and can serve as the guideline for developing practical device applications.

  20. Acute resistance exercise using free weights on aortic wave reflection characteristics.

    Science.gov (United States)

    Tai, Yu Lun; Gerhart, Hayden; Mayo, Xián; Kingsley, J Derek

    2018-01-01

    Aortic wave reflection characteristics such as the augmentation index (AIx), wasted left ventricular pressure energy (ΔE w ) and aortic haemodynamics, such as aortic systolic blood pressure (ASBP), strongly predict cardiovascular events. The effects of acute resistance exercise (ARE) using free-weight exercises on these characteristics are unknown. Therefore, we sought to determine the effects of acute free-weight resistance exercise on aortic wave reflection characteristics and aortic haemodynamics in resistance-trained individuals. Fifteen young, healthy resistance-trained (9 ± 3 years) individuals performed two randomized sessions consisting of an acute bout of free-weight resistance exercise (ARE) or a quiet control (CON). The ARE consisted of three sets of 10 repetitions at 75% one repetition maximum for squat, bench press and deadlift. In CON, the participants rested in the supine position for 30 min. Measurements were made at baseline before sessions and 10 min after sessions. A two-way ANOVA was used to compare the effects of condition across time. There were no significant interactions for aortic or brachial blood pressures. Compared to rest, there were significant increases in augmentation pressure (rest: 5·7 ± 3·0 mmHg; recovery: 10·4 ± 5·7 mmHg, P = 0·002), AIx (rest: 116·8 ± 4·2%; recovery: 123·2 ± 8·4%, P = 0·002), AIx normalized at 75 bpm (rest: 5·2 ± 7·6%; recovery: 27·3 ± 13·2%, P<0·0001), ΔE w (rest: 1215 ± 674 dynes s cm -2 ; recovery: 2096 ± 1182 dynes s cm -2 , P = 0·008), and there was a significant decrease in transit time of the reflected wave (rest: 150·7 ± 5·8 ms; recovery 145·5 ± 5·6 ms, P<0·001) during recovery from ARE compared to CON. These data suggest that ARE using free-weight exercises may have no effect on aortic and brachial blood pressure but may significantly alter aortic wave reflection characteristics. © 2016 Scandinavian Society of Clinical Physiology and

  1. [Molecular characteristics and antibiotic resistance of Vibrio cholerae O139 in Shandong province].

    Science.gov (United States)

    Yuan, Yuqi; Lyu, Hui; Zhou, Haijian; Cui, Zhigang; Sun, Na; Guan, Bing; Shao, Kun; Bi, Zhenwang; Kan, Biao; Bi, Zhenqiang

    2014-06-01

    To investigate the molecular epidemiological characteristics and antibiotic resistance profiles of Vibrio cholerae O139 in Shandong province. A total of 13 strains of V. cholerae O139 (9 clinical strains and 4 environmental strains) isolated from cholera epidemics in Shandong province since 1997 were recovered and confirmed with serum agglutination and biochemical reaction. Pulsed-field gel electrophoresis (PFGE) was carried out for molecular subtyping. Virulence genes and drug resistance related genes were detected by PCR. Antibiotic susceptibility tests were performed using micro-broth dilution method. Thirteen strains of V. cholerae O139 were differentiated into seven pulsetypes. One clinical strain and two environmental strains isolated from Jining in 2013 were clustered into the pulsetype namely KZGN11O139. CN0077, and an identical PFGE pattern of KZGN11O139. CN0002 was found among three clinical strains from Jinan in 2005, Jining in 2005 and Heze in 2009. Other pulsotypes were unique in China and found only in Shandong province. Because of deletion of ctxAB and tcpI, the PFGE patterns of two strains isolated from Yantai in 2000 and 2004 were different from other 11 strains which harbored ctxAB, tcpA, tcpI, rtxA, hlyA and toxR. All strains contained one or more drug resistance related genes such as intI 1, intI 4 and sxt, and were resistant to two kinds of antibiotics at least. Among the 12 kinds of antibiotics, the resistant ratioes to kamamycin, trimethoprim-sulfamethoxazole, ampicillin and gentamicin were 11/13, 9/13, 7/13 and 7/13, respectively. Molecular subtyping indicates possible epidemiological links among V.cholerae O139 in Shandong province, and almost all strains were toxigenic and drug resistant.

  2. Terminal Galactosylation and Sialylation Switching on Membrane Glycoproteins upon TNF-Alpha-Induced Insulin Resistance in Adipocytes.

    Science.gov (United States)

    Parker, Benjamin L; Thaysen-Andersen, Morten; Fazakerley, Daniel J; Holliday, Mira; Packer, Nicolle H; James, David E

    2016-01-01

    Insulin resistance (IR) is a complex pathophysiological state that arises from both environmental and genetic perturbations and leads to a variety of diseases, including type-2 diabetes (T2D). Obesity is associated with enhanced adipose tissue inflammation, which may play a role in disease progression. Inflammation modulates protein glycosylation in a variety of cell types, and this has been associated with biological dysregulation. Here, we have examined the effects of an inflammatory insult on protein glycosylation in adipocytes. We performed quantitative N-glycome profiling of membrane proteins derived from mouse 3T3-L1 adipocytes that had been incubated with or without the proinflammatory cytokine TNF-alpha to induce IR. We identified the regulation of specific terminal N-glycan epitopes, including an increase in terminal di-galactose- and a decrease in biantennary alpha-2,3-sialoglycans. The altered N-glycosylation of TNF-alpha-treated adipocytes correlated with the regulation of specific glycosyltransferases, including the up-regulation of B4GalT5 and Ggta1 galactosyltransferases and down-regulation of ST3Gal6 sialyltransferase. Knockdown of B4GalT5 down-regulated the terminal di-galactose N-glycans, confirming the involvement of this enzyme in the TNF-alpha-regulated N-glycome. SILAC-based quantitative glycoproteomics of enriched N-glycopeptides with and without deglycosylation were used to identify the protein and glycosylation sites modified with these regulated N-glycans. The combined proteome and glycoproteome workflow provided a relative quantification of changes in protein abundance versus N-glycosylation occupancy versus site-specific N-glycans on a proteome-wide level. This revealed the modulation of N-glycosylation on specific proteins in IR, including those previously associated with insulin-stimulated GLUT4 trafficking to the plasma membrane. © 2016 by The American Society for Biochemistry and Molecular Biology, Inc.

  3. Terminal Galactosylation and Sialylation Switching on Membrane Glycoproteins upon TNF-Alpha-Induced Insulin Resistance in Adipocytes*

    Science.gov (United States)

    Parker, Benjamin L.; Thaysen-Andersen, Morten; Fazakerley, Daniel J.; Holliday, Mira; Packer, Nicolle H.; James, David E.

    2016-01-01

    Insulin resistance (IR) is a complex pathophysiological state that arises from both environmental and genetic perturbations and leads to a variety of diseases, including type-2 diabetes (T2D). Obesity is associated with enhanced adipose tissue inflammation, which may play a role in disease progression. Inflammation modulates protein glycosylation in a variety of cell types, and this has been associated with biological dysregulation. Here, we have examined the effects of an inflammatory insult on protein glycosylation in adipocytes. We performed quantitative N-glycome profiling of membrane proteins derived from mouse 3T3-L1 adipocytes that had been incubated with or without the proinflammatory cytokine TNF-alpha to induce IR. We identified the regulation of specific terminal N-glycan epitopes, including an increase in terminal di-galactose- and a decrease in biantennary alpha-2,3-sialoglycans. The altered N-glycosylation of TNF-alpha-treated adipocytes correlated with the regulation of specific glycosyltransferases, including the up-regulation of B4GalT5 and Ggta1 galactosyltransferases and down-regulation of ST3Gal6 sialyltransferase. Knockdown of B4GalT5 down-regulated the terminal di-galactose N-glycans, confirming the involvement of this enzyme in the TNF-alpha-regulated N-glycome. SILAC-based quantitative glycoproteomics of enriched N-glycopeptides with and without deglycosylation were used to identify the protein and glycosylation sites modified with these regulated N-glycans. The combined proteome and glycoproteome workflow provided a relative quantification of changes in protein abundance versus N-glycosylation occupancy versus site-specific N-glycans on a proteome-wide level. This revealed the modulation of N-glycosylation on specific proteins in IR, including those previously associated with insulin-stimulated GLUT4 trafficking to the plasma membrane. PMID:26537798

  4. Electron scattering characteristics of polycrystalline metal transition films by in-situ electrical resistance measurements

    Energy Technology Data Exchange (ETDEWEB)

    Trindade, I.G. [Faculdade de Ciencias da Universidade do Porto, Physics Department, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); IFIMUP and IN, Rua do Campo Alegre 687, 4169-007 Porto (Portugal)], E-mail: i_trindade@msn.com; Leitao, D. [IFIMUP and IN, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); Fermento, R. [Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain); Pogorelev, Y.; Sousa, J.B. [Faculdade de Ciencias da Universidade do Porto, Physics Department, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); IFIMUP and IN, Rua do Campo Alegre 687, 4169-007 Porto (Portugal)

    2009-08-15

    In-situ electrical resistance measurements were performed to obtain the scattering characteristics of very thin polycrystalline metal transition magnetic alloys grown by ion beam deposition (IBD) on specific underlayers. The experimental curves show size effects at small film thicknesses and important differences between Co{sub 85}Fe{sub 15} and Ni{sub 81}Fe{sub 19} thin layers grown on identical underlayers of Ta70 A/Ru13 A. The largest difference was observed in Ni{sub 81}Fe{sub 19} films grown on underlayers of amorphous Ta70 A. The experimental curves of electrical resistivity/conductivity variation with layer thickness were well fit within the Mayadas and Shatzkes (M-S) model, assuming specific formulations for grain growth with layer thickness.

  5. Mechanical and electrical contact resistance characteristics of a cellular assembly of carbon nanotubes

    International Nuclear Information System (INIS)

    Kiran, M S R N; Ramamurty, U; Misra, Abha

    2013-01-01

    We employ nanoindentation coupled with electrical contact resistance measurements for simultaneous characterization of the electrical and mechanical behaviors of a cellular assembly of carbon nanotubes (CNTs). Experimental results reveal two different responses that correspond to relatively dense and porous regions of the cellular structure. Distinct nonlinear electron transport characteristics are observed, which mainly originate from diffusive conductance in the CNT structure. In the denser region, differential conductance shows asymmetric minima at lower bias, implying that conductivity mainly results from bulk tunneling. However, the porous regions show insignificant differential conduction as opposed to the denser region. (paper)

  6. Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D., E-mail: daniel.cristea@unitbv.ro [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crisan, A. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Cretu, N. [Electrical Engineering and Applied Physics Department, Transilvania University, 500036 Brasov (Romania); Borges, J. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Lopes, C.; Cunha, L. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Ion, V.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, “Photonic Processing of Advanced Materials” Group, PO Box MG-16, RO 77125 Magurele-Bucharest (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, 21 Avenue Jean Capelle, 69621 Villeurbanne cedex (France); Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania)

    2015-11-01

    Highlights: • Tantalum oxynitride thin films have been deposited by magnetron sputtering, in various configurations. • The rising of the reactive gases mixture flow has the consequence of a gradual increase in the non-metallic content in the films, which results in a 10 orders of magnitude resistivity domain. • The higher resistivity films exhibit dielectric constants up to 41 and quality factors up to 70. - Abstract: The main purpose of this work is to present and to interpret the change of electrical properties of Ta{sub x}N{sub y}O{sub z} thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N{sub 2} and O{sub 2}, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, −50 V or −100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance Ta{sub x}N{sub y}O{sub z} films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric Ta{sub x}N{sub y}O{sub z} films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

  7. Three cases of acute gastroenteritis caused by high-level macrolideresistant Campylobacter: drug resistance mechanisms and clinical characteristics.

    Science.gov (United States)

    Chen, Jie; Yu, Yanyan; Wang, Jun; Gu, Yixing; Sun, Xinting; Xu, Jinghang; Zeng, Zheng

    2012-07-01

    We report 3 cases of acute gastroenteritis caused by high-level macrolide-resistant Campylobacter. The clinical characteristics of patients were studied, and the rplD, rplV, and 23S rRNA domain V genes were sequenced to detected resistance-related mutations.

  8. Resisting force characteristics of a mechanical snubber and its restraint effect on beam deformation

    International Nuclear Information System (INIS)

    Ohmata, Kenichiro

    1987-01-01

    A mechanical snubber is used to restrain piping systems in nuclear power plants during an earthquake. It has nonlinearities in both load (or exciting amplitude) and frequency response, so it will be very difficult to analyze the resisting force characteristics of the mechanical snubber theoretically. In this report, the equation of motion of the mechanical snubber is derived and digital simulations of snubber dynamic characteristics over a frequency range are carried out using the Continuous System Simulation Language (CSSL). Also, the restraint effect of the mechanical snubber applied to a simple beam is discussed both numerically and experimentally. The beam is replaced by a lumped mass system and CSSL is used to perform the digital simulations. (author)

  9. Amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.

    2013-04-01

    Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

  10. Characteristics of Resistance Spot Welded Ti6Al4V Titanium Alloy Sheets

    Directory of Open Access Journals (Sweden)

    Xinge Zhang

    2017-10-01

    Full Text Available Ti6Al4V titanium alloy is applied extensively in the aviation, aerospace, jet engine, and marine industries owing to its strength-to-weight ratio, excellent high-temperature properties and corrosion resistance. In order to extend the application range, investigations on welding characteristics of Ti6Al4V alloy using more welding methods are required. In the present study, Ti6Al4V alloy sheets were joined using resistance spot welding, and the weld nugget formation, mechanical properties (including tensile strength and hardness, and microstructure features of the resistance spot-welded joints were analyzed and evaluated. The visible indentations on the weld nugget surfaces caused by the electrode force and the surface expulsion were severe due to the high welding current. The weld nugget width at the sheets’ faying surface was mainly affected by the welding current and welding time, and the welded joint height at weld nugget center was chiefly associated with electrode force. The maximum tensile load of welded joint was up to 14.3 kN in the pullout failure mode. The hardness of the weld nugget was the highest because of the coarse acicular α′ structure, and the hardness of the heat-affected zone increased in comparison to the base metal due to the transformation of the β phase to some fine acicular α′ phase.

  11. Multi- and extensively drug-resistant tuberculosis in Latvia: trends, characteristics and treatment outcomes

    Science.gov (United States)

    Riekstina, V.; Leimane, V.; Ozere, I.; Skenders, G.; Van den Bergh, R.; Kremer, K.; Acosta, C. D.; Harries, A. D.

    2014-01-01

    Setting: Drug-resistant tuberculosis (TB) is an important public health problem in Latvia. Objective: To document trends, characteristics and treatment outcomes of registered patients with multi-drug-resistant (MDR-) and extensively drug-resistant (XDR-) TB in Latvia from 2000 to 2010. Design: A retrospective national cohort study. Results: Of 1779 patients, 1646 (92%) had MDR- and 133 (8%) XDR-TB. Over 11 years, the proportion of XDR-TB among MDR-TB patients increased from 2% to 18%. Compared to MDR-TB patients, those with XDR-TB were significantly more likely to have failed MDR-TB treatment (OR 8.4, 95%CI 4.3–16.2), have human immunodeficiency virus infection (OR 3.2, 95%CI 1.8–5.7), be illegal drug users (OR 5.7, 95%CI 2.6–11.6) or have had contact with MDR-TB patients (OR 1.9, 95%CI 1.3–2.8). Cure rates for XDR-TB were 50%. Compared with MDR-TB patients, those with XDR-TB had a higher risk of treatment failure (29% vs. 8%, respectively, P Latvia is now also XDR-TB. This study identified several risk factors for XDR-TB and, for unfavourable treatment outcomes, highlighting the importance of early diagnosis and appropriate management of MDR-/XDR-TB. PMID:26393098

  12. Chromium-modified a-C films with advanced structural, mechanical and corrosive-resistant characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Ming, Miao Yi [International Chinese-Belarusian scientific laboratory on vacuum-plasma technology, Nanjing University of Science and Technology, Nanjing 210094 (China); Francisk Skorina Gomel State University, Gomel 246019 (Belarus); Jiang, Xiaohong, E-mail: jxh0668@sina.com [International Chinese-Belarusian scientific laboratory on vacuum-plasma technology, Nanjing University of Science and Technology, Nanjing 210094 (China); Francisk Skorina Gomel State University, Gomel 246019 (Belarus); Piliptsou, D.G., E-mail: pdg_@mail.ru [International Chinese-Belarusian scientific laboratory on vacuum-plasma technology, Nanjing University of Science and Technology, Nanjing 210094 (China); Francisk Skorina Gomel State University, Gomel 246019 (Belarus); Zhuang, Yuzhao; Rogachev, A.V.; Rudenkov, A.S. [International Chinese-Belarusian scientific laboratory on vacuum-plasma technology, Nanjing University of Science and Technology, Nanjing 210094 (China); Francisk Skorina Gomel State University, Gomel 246019 (Belarus); Balmakou, A. [Faculty of Material Science and Technology, Slovak University of Technology, Trnava 91724 (Slovakia)

    2016-08-30

    Highlights: • Influence of the chromium interlayer on the structure and mechanical properties of a-C:Cr films. • Residual stress and wear of a-C:Cr and Cr/a-C varies due to their phase and surface morphology. • Chromium-modified a-C films with advanced structural, mechanical and corrosive-resistant characteristics. - Abstract: To improve structural, mechanical and chemical properties of diamond-like carbon films, we developed amorphous carbon chromium-modified composite films fabricated by means of cathode magnetic filtered arc deposition. The properties were analyzed by Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy for the purpose of the structure characterization, elemental analysis and topology examination. Moreover, we also assessed residual stress, the coefficient of friction, hardness, the elastic modulus and corrosion parameters through X-ray double-crystal surface profilometry, tribo-testing, nanoindenter-testing, as well as contact angle measurements and potentiodynamic polarization analysis. As a result of a comparative analysis, we revealed a substantial improvement in the characteristics of developed composite films in comparison with amorphous carbon films. For example, Cr-modification is resulted, in greater integrated performance, toughness and corrosion resistance; the residual stress was reduced substantially.

  13. Standard test methods for performance characteristics of metallic bonded resistance strain gages

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1992-01-01

    1.1 The purpose of this standard is to provide uniform test methods for the determination of strain gauge performance characteristics. Suggested testing equipment designs are included. 1.2 Test Methods E 251 describes methods and procedures for determining five strain gauge parameters: Section Part I—General Requirements 7 Part II—Resistance at a Reference Temperature 8 Part III—Gauge Factor at a Reference Temperature 9 Part IV—Temperature Coefficient of Gauge Factor\t10 Part V—Transverse Sensitivity\t11 Part VI—Thermal Output\t12 1.3 Strain gauges are very sensitive devices with essentially infinite resolution. Their response to strain, however, is low and great care must be exercised in their use. The performance characteristics identified by these test methods must be known to an acceptable accuracy to obtain meaningful results in field applications. 1.3.1 Strain gauge resistance is used to balance instrumentation circuits and to provide a reference value for measurements since all data are...

  14. [Clinical characteristics and therapeutic effect of drug-resistant tuberculosis in children].

    Science.gov (United States)

    Liao, Q; Tan, S; Zhu, Y; Wan, C M; Deng, S Y; Shu, M

    2017-02-02

    Objective: To explore the clinical characteristics of drug-resistant tuberculosis (TB) in children and to study the effectiveness of second-line anti-TB therapy for children and to examine the incidence of adverse drug reactions. Method: Retrospective research was conducted. The clinical records of children in West China Second Hospital diagnosed as drug-resistant TB from January 2010 to June 2014 were investigated.The clinical characteristics and risk factors were analyzed retrospectively. Treatment effect at discharge was examined as a short-term outcome indicator to evaluate the effectiveness of second-line anti-TB therapy and the incidence of adverse drug reactions. χ(2) test was used. Result: Forty-six patients were diagnosed as drug-resistant TB in 443 children infected with TB, with a 10.4% resistance rate. The 46 children included 26 male and 20 female patients, aged from one month and 28 days to 17 years and 5 months, with the average age (8.4±4.5) years, >7 to 14 years old patients as the biggest part(25 patients, 54.3%). Among the 46 children, 20 patients(43.5%)had close contact with TB patients, of whom 12 patients (60.0%) contacted with family members (including parents, brothers and sisters and grandparents living together) and 8 patients(40.0%) contacted with patients from outside family (such as relatives or neighbors). Moreover, 11 cases (23.9%) were under initial treatment and 35 cases (76.1%) were retreated.From 2010 to 2014, the number of cases of initial and retreated patients had no significant difference(0 and 1, 1 and 13, 4 and 7, 4 and 11, 2 and 3 cases, χ(2)=3.255, P =0.196). Among retreated patients, 31.4% (11/35) had irregular treatment before.Until discharge, the effective rate was 87.0% (40/46), while the incidence rate of adverse drug reaction was 10.9%(5/46). Conclusion: The therapy for drug-resistant TB is effective and the incidence of adverse drug reaction is relatively low.

  15. Phenotypic and molecular characteristics of methicillin-resistant Staphylococcus aureus isolates from Ekiti State, Nigeria

    Directory of Open Access Journals (Sweden)

    Olowe OA

    2013-08-01

    Full Text Available Olugbenga Adekunle Olowe,1 Olayinka Oluwatoyin Kukoyi,2 Samuel Sunday Taiwo,1 Olusola Ojurongbe,1 Oluyinka Oladele Opaleye,1 Oloyede Samuel Bolaji,1 Abiodun Adebimpe Adegoke,1 Olufunmilola Bamidele Makanjuola,1 David Olusoga Ogbolu,3 Oyebode Terry Alli31Department of Medical Microbiology and Parasitology, College of Health Sciences, Ladoke Akintola University of Technology, Ogbomoso, Nigeria; 2Department of Microbiology, College of Sciences, Afe Babalola University, Ado-Ekiti, Nigeria; 3Department of Biomedical Sciences, College of Health Sciences, Lautech, Osogbo, NigeriaIntroduction: The characteristics and antimicrobial resistance profiles of Staphylococcus aureus differs according to geographical regions and in relation to antibiotic usage. The aim of this study was to determine the biochemical characteristics of the prevalent S. aureus from Ekiti State, Nigeria, and to evaluate three commonly used disk diffusion methods (cefoxitin, oxacillin, and methicillin for the detection of methicillin resistance in comparison with mecA gene detection by polymerase chain reaction.Materials and methods: A total of 208 isolates of S. aureus recovered from clinical specimens were included in this study. Standard microbiological procedures were employed in isolating the strains. Susceptibility of each isolate to methicillin (5 µg, oxacillin (1 µg, and cefoxitin (30 µg was carried out using the modified Kirby–Bauer/Clinical and Laboratory Standard Institute disk diffusion technique. They were also tested against panels of antibiotics including vancomycin. The conventional polymerase chain reaction method was used to detect the presence of the mecA gene.Results: Phenotypic resistance to methicillin, oxacillin, and cefoxitin were 32.7%, 40.3%, and 46.5%, respectively. The mecA gene was detected in 40 isolates, giving a methicillin-resistant S. aureus (MRSA prevalence of 19.2%. The S. aureus isolates were resistant to penicillin (82.7% and tetracycline

  16. Characteristics of Standard Capsule-Type PtCo Resistance Thermometers Between 0.65 K and 25 K

    Science.gov (United States)

    Shimazaki, T.; Nakano, T.; Takasu, S.

    2017-07-01

    Standard capsule-type platinum-cobalt (PtCo) resistance thermometers represent one of the few types of resistance thermometers that have been developed for precise thermometry in the cryogenic temperature range. These thermometers remain sensitive even at 0.65 K, which is the lower limit of the ITS-90. Standard capsule-type rhodium-iron (RhFe) resistance thermometers are another type of resistance thermometer intended for use in this temperature range and have been well characterized and are the de facto standard worldwide. Existing data show RhFe resistance thermometers are more reproducible than the corresponding PtCo resistance thermometer. However, it has become difficult to obtain brand-new standard capsule-type RhFe resistance thermometers since their production was discontinued in the early 2000s. Unfortunately, information regarding the characteristics of standard capsule-type PtCo resistance thermometers is limited compared to that available for RhFe resistance thermometers. In this study, the characteristics of two standard capsule-type PtCo resistance thermometers between 0.65 K and 25 K were investigated. Because the resistance versus temperature curves for these thermometers over this temperature range exhibit two inflection points, setting break points near each of the inflection points was found to be beneficial during polynomial curve fitting to obtain mK-level precision. Special attention was paid to the reproducibility of these thermometers, and it was observed that the reproducibility of one of the thermometers within the cryogenic temperature range was ±0.5 mK over 6 years, while the second thermometer showed a larger variation. Similar trends in the resistance characteristics of the two thermometers were observed at the triple point of water.

  17. Prevalence and characteristics of patients with resistant hypertension and chronic kidney disease.

    Science.gov (United States)

    Verdalles, Úrsula; Goicoechea, Marian; Garcia de Vinuesa, Soledad; Quiroga, Borja; Galan, Isabel; Verde, Eduardo; Perez de Jose, Ana; Luño, José

    Resistant hypertension (RH) is a common problem in patients with chronic kidney disease (CKD). A decline in the glomerular filtration rate (GFR) and increased albuminuria are associated with RH; however, there are few published studies about the prevalence of this entity in patients with CKD. To estimate the prevalence of RH in patients with different degrees of kidney disease and analyse the characteristics of this group of patients. A total of 618 patients with hypertension and CKD stages i-iv were enrolled, of which 82 (13.3%) met the criteria for RH. RH prevalence increased significantly with age, the degree of CKD and albuminuria. The prevalence of RH was 3.2% in patients under 50 years, 13.8% between 50-79 years and peaked at 17.8% in patients older than 80 years. Renal function prevalence was 4, 15.8 and 18.1% in patients with an estimated glomerular filtration rate (GFR) of > 60, 30-59 and  300mg/g respectively. In a logistic regression model, the characteristics associated with resistant hypertension were age, history of cardiovascular disease, GFR, albuminuria and diabetes mellitus. A total of 47.5% of patients with resistant hypertension had controlled BP (<140/90mmHg) with 4 or more antihypertensive drugs. These patients were younger, with better renal function, less albuminuria and received more aldosterone antagonists. RH prevalence increases with age, the degree of CKD and albuminuria. Strategies such as treatment with aldosterone receptor antagonists are associated with better blood pressure control in this group of patients, leading to reduced prevalence. Copyright © 2016 Sociedad Española de Nefrología. Published by Elsevier España, S.L.U. All rights reserved.

  18. Coulomb Blockade Plasmonic Switch.

    Science.gov (United States)

    Xiang, Dao; Wu, Jian; Gordon, Reuven

    2017-04-12

    Tunnel resistance can be modulated with bias via the Coulomb blockade effect, which gives a highly nonlinear response current. Here we investigate the optical response of a metal-insulator-nanoparticle-insulator-metal structure and show switching of a plasmonic gap from insulator to conductor via Coulomb blockade. By introducing a sufficiently large charging energy in the tunnelling gap, the Coulomb blockade allows for a conductor (tunneling) to insulator (capacitor) transition. The tunnelling electrons can be delocalized over the nanocapacitor again when a high energy penalty is added with bias. We demonstrate that this has a huge impact on the plasmonic resonance of a 0.51 nm tunneling gap with ∼70% change in normalized optical loss. Because this structure has a tiny capacitance, there is potential to harness the effect for high-speed switching.

  19. Photoresistance switching of plasmonic nanopores.

    Science.gov (United States)

    Li, Yi; Nicoli, Francesca; Chen, Chang; Lagae, Liesbet; Groeseneken, Guido; Stakenborg, Tim; Zandbergen, Henny W; Dekker, Cees; Van Dorpe, Pol; Jonsson, Magnus P

    2015-01-14

    Fast and reversible modulation of ion flow through nanosized apertures is important for many nanofluidic applications, including sensing and separation systems. Here, we present the first demonstration of a reversible plasmon-controlled nanofluidic valve. We show that plasmonic nanopores (solid-state nanopores integrated with metal nanocavities) can be used as a fluidic switch upon optical excitation. We systematically investigate the effects of laser illumination of single plasmonic nanopores and experimentally demonstrate photoresistance switching where fluidic transport and ion flow are switched on or off. This is manifested as a large (∼ 1-2 orders of magnitude) increase in the ionic nanopore resistance and an accompanying current rectification upon illumination at high laser powers (tens of milliwatts). At lower laser powers, the resistance decreases monotonically with increasing power, followed by an abrupt transition to high resistances at a certain threshold power. A similar rapid transition, although at a lower threshold power, is observed when the power is instead swept from high to low power. This hysteretic behavior is found to be dependent on the rate of the power sweep. The photoresistance switching effect is attributed to plasmon-induced formation and growth of nanobubbles that reversibly block the ionic current through the nanopore from one side of the membrane. This explanation is corroborated by finite-element simulations of a nanobubble in the nanopore that show the switching and the rectification.

  20. Switch from Immediate-release Pramipexole to Extended-release Pramipexole: The Safety and Efficacy Characteristics of Sixty-eight Patients

    Directory of Open Access Journals (Sweden)

    Müge Kuzu

    2016-09-01

    Full Text Available Objective: To evaluate the safety and efficacy of switching from immediate-release pramipexole (pex to extended-release pramipexole (pex-ER. Materials and Methods: Pex-ER became available in Turkey about a year ago, since then we documented satisfactory information on patients (26 women; 38% who were switched from pex to pex-ER. We recorded pre- and post-switch pex and levodopa, equivalent doses of other anti-parkinsonian medication, and analyzed the frequency and nature of reported adverse effects. Results: The mean age of the patients was 63.3 years (range, 44-88 years, and the mean disease duration was 7.1 years (range, 1-27 years. The other drugs were levodopa (57 patients, 82.6%, entacapone (24 patients, 34.58%, rasagiline (20 patients, 29%, amantadine (18 patients, 26.1%, and apomorphine (six patients, 8.7%. Switch from pex to pex-ER was uneventful in 62 (91.2% patients. Adverse events were reported in six (8.8% patients: ankle swelling (two patients, nausea (one patient, dyskinesia (one patient, hypersexuality (one patient, and psychosis (one patient. Problems resolved with further medication change in two patients. Four patients preferred to return to pex. Conclusion: The great majority of patients (91.2% switched from three times daily pex to once daily pex-ER uneventfully. A slight increase in pex daily dose, which was tailored according to patients’ symptomatic needs, resulted in an increase in post-switch levodopa equivalent doses. Our experience is compatible with previously reported studies.

  1. Development of high voltage PEEK wire with radiation-resistance and cryogenic characteristics

    International Nuclear Information System (INIS)

    Fujita, T.; Hirata, T.; Araki, S.; Ohara, H.; Nishimura, H.

    1989-01-01

    High voltage electric wires insulated with highly-refined polyetheretherketone (PEEK) have been developed for the wiring in fusion reactors, where the wire is required to withstand high voltage under high vacuum up to 10 -5 Torr. The PEEK wires having the advantages of PEEK resin including superior radiation resistance and cryogenic characteristics are usable over a wide range of temperature and in radiation fields. The results of withstand voltage tests proved that the PEEK wires exceeding 0.8 mm in insulation thickness withstand such specified high voltage conditions as 24 kV for 1 minutes by 10 times and 6.6 kV for 110 hours. The results also revealed that the withstand voltage is improved by providing a jacket layer over the insulation and decreased by periodical voltage charge, by bending of the specimen and by water in the conductor. This paper deal with the withstand voltage test results under varied conditions of the PEEK wires. (author)

  2. Presence and molecular characteristics of oxazolidinone resistance in staphylococci from household animals in rural China.

    Science.gov (United States)

    Sun, Chengtao; Zhang, Peng; Ji, Xing; Fan, Run; Chen, Baoli; Wang, Yang; Schwarz, Stefan; Wu, Congming

    2018-02-07

    To investigate the presence and molecular characteristics of oxazolidinone resistance genes cfr and optrA in staphylococci from household animals in rural China. Various samples were collected from household animals in 12 rural villages. Staphylococcal isolates showing florfenicol MICs ≥10 mg/L were identified and screened for the presence of cfr and/or optrA. PCR-positive isolates were characterized by antimicrobial susceptibility testing, S1 nuclease PFGE and Southern blotting. WGS data were analysed to identify the core-genome phylogenetic profile of each isolate as well as the genetic environment of cfr and/or optrA. Nine optrA-positive (seven Staphylococcus sciuri and two Staphylococcus simulans) and 10 cfr-positive staphylococci were identified from eight and five villages, respectively. The gene optrA was chromosomally encoded in all nine isolates, whereas cfr was located on a plasmid in one S. sciuri and three Staphylococcus saprophyticus and in the chromosomal DNA of single Staphylococcus cohnii and Staphylococcus lentus isolates and two S. sciuri isolates. The remaining two cfr-carrying Staphylococcus haemolyticus isolates were indistinguishable by PFGE. Most optrA- or cfr-carrying staphylococci also harboured phenicol, tetracycline and/or macrolide-lincosamide-streptogramin B resistance genes. Genetic environment analysis showed that, for the first time, optrA was associated with transposon Tn6261, while cfr was adjacent to both a tnp (transposase) gene and a Tn558 transposon. The current study reveals for the first time the wide distribution of oxazolidinone resistance genes optrA and cfr in household animals in rural areas of China and is the first identification of optrA in S. simulans isolates. © The Author(s) 2018. Published by Oxford University Press on behalf of the British Society for Antimicrobial Chemotherapy. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  3. Molecular Characteristics of Nasal Carriage Methicillin-Resistant Coagulase Negative Staphylococci in School Students.

    Science.gov (United States)

    Iravani Mohammad Abadi, Mohammad; Moniri, Rezvan; Khorshidi, Ahmad; Piroozmand, Ahmad; Mousavi, Seyed Gholam Abbas; Dastehgoli, Kamran; Mirzaei Ghazikalayeh, Hamed

    2015-06-01

    Coagulase-negative staphylococci (CoNS) are opportunistic pathogens. Methicillin resistance is common in CoNS and may play an important role as reservoir of staphylococcal cassette chromosome mec (SCCmec) for Staphylococcus aureus. The aim of this study was to determine molecular characteristics of nasal carriage of methicillin-resistant coagulase negative staphylococci among students. MR-CoNS from both nares of students were collected. Resistance to methicillin was determined by cefoxitin (30μg) disk diffusion test. SCCmec typing was performed using multiplex PCR by mec complex classes and ccr genes. Antimicrobial susceptibility profiles were determined on Mueller-Hinton agar according to CLSI. A total of 600 consecutive students were enrolled in this study; 430 of whom (71.7%) had CoNS. Seventy-two MR-CoNS strains, 21 (29.2%) S. lugdunensis, 17 (23.6%) S. haemolyticus, 17 (23.6%) S. saprophyticus, 9 (12.5%) S. epidermidis and 8 (11.1%) S. schleiferi were isolated. MR-CoNS rate in nasal carriage was 16.7%. All strains were susceptible to vancomycin. Forty-eight (66.7%) had a single SCCmec type including types I (n = 5), II (n = 4), III (n = 7), IV (n = 19) and V (n = 13), whereas 5 (6.9%) had two types including III + IV (n = 2), III + V (n = 1) and IV + V (n = 2). Nineteen strains (26.4%) were non-typeable for their SCCmec and ccr. Types IV and V SCCmec were associated with S. lugdunensis and S. haemolyticus, respectively. SCCmec types IV and V were prevalent in MR-CoNS and few isolates could harbor more than one type.

  4. M-H characteristics and demagnetization resistance of samarium-cobalt permanent magnets to 300 C

    Science.gov (United States)

    Niedra, Janis M.

    1992-01-01

    The influence of temperature on the M-H demagnetization characteristics of permanent magnets is important information for the full utilization of the capabilities of samarium-cobalt magnets at high temperatures in demagnetization-resistant permanent magnet devices. In high temperature space power converters, such as free-piston Stirling engine driven linear alternators, magnet demagnetization can occur as a long-term consequence of thermal agitation of domains and of metallurgical change, and also as an immediate consequence of too large an applied field. Investigated here is the short-term demagnetization resistance to applied fields derived from basic M-H data. This quasistatic demagnetization data was obtained for commercial, high-intrinsic-coercivity, Sm2Co17-type magnets from 5 sources, in the temperature range 23 to 300 C. An electromagnet driven, electronic hysteresigraph was used to test the 1-cm cubic samples. The observed variation of the 2nd quadrant M-H characteristics was a typical rapid loss of M-coercivity and a relatively lesser loss of remanence with increasing temperature. The 2nd quadrant M-H curve knee point is used to define the limits of operation safe against irreversible demagnetization due to an excessive bucking field for a given flux density swing at temperature. Such safe operating area plots are shown to differentiate the high temperature capabilities of the samples from different sources. For most of the samples, their 2nd quadrant M-H loop squareness increased with temperature, reaching a peak or a plateau above 250 C.

  5. Numerical Estimation of the Outer Bank Resistance Characteristics in AN Evolving Meandering River

    Science.gov (United States)

    Wang, D.; Konsoer, K. M.; Rhoads, B. L.; Garcia, M. H.; Best, J.

    2017-12-01

    Few studies have examined the three-dimensional flow structure and its interaction with bed morphology within elongate loops of large meandering rivers. The present study uses a numerical model to simulate the flow pattern and sediment transport, especially the flow close to the outer-bank, at two elongate meandering loops in Wabash River, USA. The numerical grid for the model is based on a combination of airborne LIDAR data on floodplains and the multibeam data within the river channel. A Finite Element Method (FEM) is used to solve the non-hydrostatic RANS equation using a K-epsilon turbulence closure scheme. High-resolution topographic data allows detailed numerical simulation of flow patterns along the outer bank and model calibration involves comparing simulated velocities to ADCP measurements at 41 cross sections near this bank. Results indicate that flow along the outer bank is strongly influenced by large resistance elements, including woody debris, large erosional scallops within the bank face, and outcropping bedrock. In general, patterns of bank migration conform with zones of high near-bank velocity and shear stress. Using the existing model, different virtual events can be simulated to explore the impacts of different resistance characteristics on patterns of flow, sediment transport, and bank erosion.

  6. High-explosive driven crowbar switch

    International Nuclear Information System (INIS)

    Dike, R.S.; Kewish, R.W. Jr.

    1976-01-01

    The disclosure relates to a compact explosive driven switch for use as a low resistance, low inductance crowbar switch. A high-explosive charge extrudes a deformable conductive metallic plate through a polyethylene insulating layer to achieve a hard current contact with a supportive annular conductor

  7. Morphological Characteristics of Schistosoma mansoni PZQ-Resistant and -Susceptible Strains Are Different in Presence of Praziquantel

    Science.gov (United States)

    Pinto-Almeida, António; Mendes, Tiago; de Oliveira, Rosimeire Nunes; Corrêa, Sheila de Andrade Penteado; Allegretti, Silmara Marques; Belo, Silvana; Tomás, Ana; Anibal, Fernanda de Freitas; Carrilho, Emanuel; Afonso, Ana

    2016-01-01

    Schistosomiasis is one of the most common human parasitic diseases whose socioeconomic impact is only surpassed by malaria. Praziquantel (PZQ) is the only drug commercially available for the treatment of all schistosome species causing disease in humans. However, there has been stronger evidences of PZQ-resistance on Schistosoma mansoni and thus it is very important to study the phenotypic characteristics associated with it. The aim of this study was to evaluate morphological alterations in S. mansoni PZQ-resistant adult worms and eggs, by comparing a PZQ- resistant strain obtained under PZQ drug pressure with a PZQ-susceptible strain. For this, scanning electronic microscopy was used to assess tegumental responsiveness of both strains under PZQ exposure, and optical microscopy allowed the monitoring of worms and eggs in the presence of the drug. Those assays showed that PZQ-susceptible worms exposed to the drug had more severe tegumental damages than the resistant one, which had only minor alterations. Moreover, contrary to what occurred in the susceptible strain, resistant worms were viable after PZQ exposure and gradually regaining full motility after removal of the drug. Eggs from resistant strain parasites are considerably smaller than those from susceptible strain. Our results suggest that there might be a difference in the tegument composition of the resistant strain and that worms are less responsive to PZQ. Changes observed in egg morphology might imply alterations in the biology of schistosomes associated to PZQ-resistance, which could impact on transmission and pathology of the disease. Moreover, we propose a hypothetical scenario where there is a different egg tropism of the S. mansoni resistant strain. This study is the first comparing two strains that only differ in their resistance characteristics, which makes it a relevant step in the search for resistance determinants. PMID:27199925

  8. Epidemic and virulence characteristic of Shigella spp. with extended-spectrum cephalosporin resistance in Xiaoshan District, Hangzhou, China.

    Science.gov (United States)

    Zhang, Chuan-Ling; Liu, Qing-Zhong; Wang, Juan; Chu, Xu; Shen, Li-Meng; Guo, Yuan-Yu

    2014-05-15

    Shigellae have become increasingly resistant to the extended-spectrum cephalosporin (ESC) worldwide and pose a great challenge to anti-infection treatment options. The purpose of this study was to determine the resistance, cephalosporin resistance mechanisms, virulence characteristic and genotype of ESC-resistant Shigella. From 2008 to 2012, Shigella isolates collected from diarrhea patients were detected for antibiotics sensitivity by disk diffusion, cephalosporin resistance determinants and virulence genes using polymerase chain reaction (PCR) and genotyping through enterobacterial repetitive intergenic consensus sequence PCR (ERIC-PCR). A total of 356 Shigella isolates were gathered, and 198 (55.6%, 58 S. flexneri and 140 S. sonnei) were resistant to ESC. All ESC-resistant isolates were susceptible to imipenem, and only 0.5% isolate was resistant to piperacillin/tazobactam. ESC-resistant S. flexneri showed high degrees of resistance to ampicillin (100%), ampicillin/sulbactam (96.6%), piperacillin (100%), trimethoprim/sulfamethoxazole (74.1%), ciprofloxacin (74.1%), levofloxacin (53.4%), ceftazidime (58.6%) and cefepime (58.6%). ESC-resistant S. sonnei exhibited high resistance rates to ampicillin (100%), piperacillin (100%) and trimethoprim/sulfamethoxazole (96.4%). Cephalosporin resistance genes were confirmed in 184 ESC-resistant isolates. bla(CTX-M) types (91.8%, mainly bla(CTX-M-14), bla(CTX-M-15) and bla(CTX-M-57)) were most prevalent, followed by bla(OXA-30) (26.3%). Over 99.0% ESC-resistant isolates harbored virulence genes ial, ipaH, virA and sen. However, set1 were more prevalent in ESC-resistant S. flexneri isolates than in S. sonnei isolates. ERIC-PCR results showed that 2 and 3 main genotypes were detected in ESC-resistant S. flexneri and S. sonnei, respectively. Our findings indicated that a high prevalence of ESC-resistant Shigella mediated mainly by bla(CTX-M) with stronger resistance and virulence, and the existence of specific clones

  9. Development of Grounding Resistance Analysis Model of Rod Electrode Considering the Effect of Large-Current Characteristic for Distribution Lines

    Science.gov (United States)

    Asaoka, Yoshinobu; Motoyama, Hideki; Matsubara, Hiroji; Sugimoto, Hitoshi

    Grounding resistance is one of the important parameters in the lightning-protection design of electric power systems. The grounding resistance of electrode decreases as large currents are injected to the electrode by electric discharges in soil. This characteristic is not considered in lightning protection design. Therefore, the design level is kept on the exceeding level in actual phenomena. From viewpoint of the rational lightning protection design for the electric power systems, this characteristic should be considered in practical design. In this study, experiments were conducted using rod electrodes, and the physical phenomena of the electrical discharge in soil were considered by assuming a certain electrical discharge model in soil. Based on these results, a grounding resistance large-current characteristic analysis model that could be easily used in EMTP was developed.

  10. Preparation and flow resistance characteristics of novel microcapsule slurries for engine cooling system

    International Nuclear Information System (INIS)

    Li, LeYuan; Zou, Deqiu; Ma, XianFeng; Liu, XiaoShi; Hu, ZhiGang; Guo, JiangRong; Zhu, YingYing

    2017-01-01

    Highlights: • Using microcapsule slurry as engine cooling media was presented. • A novel composite microcapsule was prepared by inlaying graphene into shell. • Thermal conductivity of composite microcapsules was improved greatly. • All slurries can save pumping consumption compared to pure water as coolants. - Abstract: Due to the high heat carrier density, using microcapsule phase change material (MPCM) slurry as engine coolant instead of water was presented. To match the engine cooling temperature, a novel microcapsule was prepared based on phase change paraffin with phase transition temperature range of 78–85 °C as core and urea-formaldehyde as resin shell. To improve thermal conductivity of the microcapsule, a composite microcapsule phase change material (CMPCM) was also prepared by inlaying graphene into urea-formaldehyde resin shell. By dispersing microcapsule in water, microcapsule slurries were prepared. To analyze the feasibility in engine cooling system, an experimental study on the flow resistance characteristics of microcapsule slurries in a circular tube was conducted. The pressure drops of slurries for turbulent flow were measured and the effects of such facts as the concentration and flow velocity were discussed. According to the pressure characteristic and latent heat of the slurry, the pumping consumption rates of slurries to water under a given heat transportation quantity can be obtained. The results show that mass flow rate and pumping consumption of slurries decrease greatly compared with water, which indicate that the microcapsule slurries are promising media for engine cooling system.

  11. Characteristics of spring wheat genotypes exhibiting high resistance to FHB in terms of their resistance to other fungal diseases

    Directory of Open Access Journals (Sweden)

    Danuta Kurasiak-Popowska

    2016-09-01

    Full Text Available The field experiment was carried out in 2010–2012 at the Dłoń Agricultural Research Station, the Poznań University of Life Sciences, Poland. The study was designed to evaluate the degree of infection by powdery mildew, brown rust, and septoria leaf blotch in 61 spring wheat genotypes differing in their resistance to Fusarium ssp. The vast majority of spring wheat genotypes in the collection of gene resources in the USA defined as resistant to Fusarium ssp. confirmed their resistance under Polish climatic conditions. The B .graminis infection rate of genotypes that are considered to be resistant to Fusarium head blight was high. The resistance ranged from 7 for Sumai 3 (PL2 up to 8.8 for Ning 8331 (in a 9-point scale. Most of the genotypes (56.5% were infected by Puccinia recondita at a level of 1–3 (in a 9-point scale. The genotypes of Sumai 3 exhibited high resistance to septoria leaf blotch, amounting to 1–2 in a 9-point scale; the resistance of Frontana ranged from 1 to 3.5, while the genotypes of Ning were infected by Mycosphaerella graminicola at 5–6.

  12. Biological characteristics of Taxol‑resistant ovarian cancer cells and reversal of Taxol resistance by adenovirus expressing p53.

    Science.gov (United States)

    Liu, Qun; Sui, Rui; Li, Ruirui; Miao, Jinwei; Liu, Jian

    2015-02-01

    The development of acquired drug resistance is the primary cause of chemotherapy failure in the treatment of ovarian cancer. To examine the mechanism underlying Taxol (TAX) resistance in ovarian cancer and attempt to reverse it, the present study induced a TAX‑resistant ovarian cancer cell line SKOV3/TAX using a gradient concentration increment method. The properties of the resistant cell line were initially investigated by proliferation, colony formation, adhesion and cell cycle analysis compared with control SKOV3 cells. To examine the mechanism, the expression of p53 upregulated modulator of apoptosis (PUMA) was compared between SKOV3/TAX and SKOV3 cells by western blot analysis. An adenovirus expressing p53 (Ad‑p53), alone or in combination with TAX, was used to treat the drug‑resistant ovarian cancer cells SKOV3/TAX. The effects of Ad‑p53 on pro‑apoptosis and the reversal of drug resistance were evaluated using flow cytometric analysis, cleaved‑poly ADP‑ribose polymerase detection, microscopic observation and MTT measurement. Compared with the control cells, the TAX‑resistant ovarian cancer cell line SKOV3/TAX was characterized by reduced sensitivity to TAX treatment, a significantly slower proliferation rate, higher colony‑forming efficiency and higher adhesion ability. However, no significant difference in cell cycle distribution was identified. PUMA, a potent pro‑apoptotic protein, was markedly suppressed in the SKOV3/TAX cells. Ad‑p53 infection stimulated the upregulation of PUMA and re‑sensitized the resistant ovarian cancer cells to TAX by an apoptotic mechanism. Therefore, Ad‑p53 infection is an effective gene therapy method to re‑sensitize the resistant ovarian cancer cells to TAX by restoring the expression of PUMA.

  13. A method to investigate the electron scattering characteristics of ultrathin metallic films by in situ electrical resistance measurements

    Energy Technology Data Exchange (ETDEWEB)

    Trindade, I. G.; Sousa, J. B. [IFIMUP and IN, Rua do campo Alegre, 687, 4169-007 Porto (Portugal); Department of Physics, FCUP, Rua do Campo Alegre, 687, 4169-007 Porto (Portugal); Fermento, R. [Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain); Leitao, D. [IFIMUP and IN, Rua do campo Alegre, 687, 4169-007 Porto (Portugal)

    2009-07-15

    In this article, a method to measure the electrical resistivity/conductivity of metallic thin films during layer growth on specific underlayers is described. The in situ monitoring of an underlayer electrical resistance, its change upon the incoming of new material atoms/molecules, and the growth of a new layer are presented. The method is easy to implement and allows obtaining in situ experimental curves of electrical resistivity dependence upon film thickness with a subatomic resolution, providing insight in film growth microstructure characteristics, specular/diffuse electron scattering surfaces, and optimum film thicknesses.

  14. Threshold Switching Induced by Controllable Fragmentation in Silver Nanowire Networks.

    Science.gov (United States)

    Wan, Tao; Pan, Ying; Du, Haiwei; Qu, Bo; Yi, Jiabao; Chu, Dewei

    2018-01-24

    Silver nanowire (Ag NW) networks have been widely studied because of a great potential in various electronic devices. However, nanowires usually undergo a fragmentation process at elevated temperatures due to the Rayleigh instability that is a result of reduction of surface/interface energy. In this case, the nanowires become completely insulating due to the formation of randomly distributed Ag particles with a large distance and further applications are hindered. Herein, we demonstrate a novel concept based on the combination of ultraviolet/ozone irradiation and a low-temperature annealing process to effectively utilize and control the fragmentation behavior to realize the resistive switching performances. In contrast to the conventional fragmentation, the designed Ag/AgO x interface facilitates a unique morphology of short nanorod-like segments or chains of tiny Ag nanoparticles with a very small spacing distance, providing conduction paths for achieving the tunneling process between the isolated fragments under the electric field. On the basis of this specific morphology, the Ag NW network has a tunable resistance and shows volatile threshold switching characteristics with a high selectivity, which is the ON/OFF current ratio in selector devices. Our concept exploits a new function of Ag NW network, i.e., resistive switching, which can be developed by designing a controllable fragmentation.

  15. Influence of real-world characteristics on outcomes for patients with methicillin-resistant Staphylococcal skin and soft tissue infections: a multi-country medical chart review in Europe.

    Science.gov (United States)

    Nathwani, Dilip; Eckmann, Christian; Lawson, Wendy; Solem, Caitlyn T; Corman, Shelby; Stephens, Jennifer M; Macahilig, Cynthia; Simoneau, Damien; Chambers, Richard; Li, Jim Z; Haider, Seema

    2014-09-02

    Patient-related (demographic/disease) and treatment-related (drug/clinician/hospital) characteristics were evaluated as potential predictors of healthcare resource use and opportunities for early switch (ES) from intravenous (IV)-to-oral methicillin-resistant Staphylococcus aureus (MRSA)-active antibiotic therapy and early hospital discharge (ED). This retrospective observational medical chart study analyzed patients (across 12 European countries) with microbiologically confirmed MRSA complicated skin and soft tissue infections (cSSTI), ≥3 days of IV anti-MRSA antibiotics during hospitalization (July 1, 2010-June 30, 2011), and discharged alive by July 31, 2011. Logistic/linear regression models evaluated characteristics potentially associated with actual resource use (length of IV therapy, length of hospital stay [LOS], IV-to-oral antibiotic switch), and ES and ED (using literature-based and expert-verified criteria) outcomes. 1542 patients (mean ± SD age 60.8 ± 16.5 years; 61.5% males) were assessed with 81.0% hospitalized for MRSA cSSTI as the primary reason. Several patient demographic, infection, complication, treatment, and hospital characteristics were predictive of length of IV therapy, LOS, IV-to-oral antibiotic switch, or ES and ED opportunities. Outcomes and ES and ED opportunities varied across countries. Length of IV therapy and LOS (r = 0.66, p  0.05). Certain patient and treatment characteristics were associated with increased odds of ES (healthcare-associated/ hospital-acquired infection) and ED (patient living arrangements, healthcare-associated/ hospital-acquired infection, initiating MRSA-active treatment 1-2 days post cSSTI index date, existing ED protocol), while other factors decreased the odds of ES (no documented MRSA culture, ≥4 days from admission to cSSTI index date, IV-to-oral switch, IV line infection) and ED (dementia, no documented MRSA culture, initiating MRSA-active treatment ≥3 days post cSSTI index date

  16. Heat switch technology for cryogenic thermal management

    Science.gov (United States)

    Shu, Q. S.; Demko, J. A.; E Fesmire, J.

    2017-12-01

    Systematic review is given of development of novel heat switches at cryogenic temperatures that alternatively provide high thermal connection or ideal thermal isolation to the cold mass. These cryogenic heat switches are widely applied in a variety of unique superconducting systems and critical space applications. The following types of heat switch devices are discussed: 1) magnetic levitation suspension, 2) shape memory alloys, 3) differential thermal expansion, 4) helium or hydrogen gap-gap, 5) superconducting, 6) piezoelectric, 7) cryogenic diode, 8) magneto-resistive, and 9) mechanical demountable connections. Advantages and limitations of different cryogenic heat switches are examined along with the outlook for future thermal management solutions in materials and cryogenic designs.

  17. Molecular characteristics of extended-spectrum cephalosporin-resistant Enterobacteriaceae from humans in the community.

    Science.gov (United States)

    van Hoek, Angela H A M; Schouls, Leo; van Santen, Marga G; Florijn, Alice; de Greeff, Sabine C; van Duijkeren, Engeline

    2015-01-01

    To investigate the molecular characteristics of extended-spectrum cephalosporin (ESC)-resistant Enterobacteriaceae collected during a cross-sectional study examining the prevalence and risk factors for faecal carriage of extended-spectrum β-lactamase (ESBL)-producing Enterobacteriaceae in humans living in areas with high or low broiler density. ESC-resistant Enterobacteriaceae were identified by combination disc-diffusion test. ESBL/AmpC/carbapenemase genes were analysed using PCR and sequencing. For E. coli, phylogenetic groups and MLST were determined. Plasmids were characterized by transformation and PCR-based replicon typing. Subtyping of plasmids was done by plasmid multilocus sequence typing. 175 ESC-resistant Enterobacteriaceae were cultured from 165/1,033 individuals. The isolates were Escherichia coli(n=65), Citrobacter freundii (n=52), Enterobacter cloacae (n=38), Morganella morganii (n=5), Enterobacter aerogenes (n=4), Klebsiella pneumoniae (n=3), Hafnia alvei (n=2), Shigella spp. (n=2), Citrobacter amalonaticus (n=1), Escherichia hermannii (n=1), Kluyvera cryocrescens (n=1), and Pantoea agglomerans (n=1). The following ESBL genes were recovered in 55 isolates originating from 49 of 1,033 (4.7 %) persons: blaCTX-M-1 (n=17), blaCTX-M-15 (n=16), blaCTX-M-14 (n=9), blaCTX-M-2 (n=3), blaCTX-M-3 (n=2), blaCTX-M-24 (n=2), blaCTX-M-27 (n=1), blaCTX-M-32 (n=1), blaSHV-12 (n=2), blaSHV-65 (n=1) and blaTEM-52 (n=1). Plasmidic AmpC (pAmpC) genes were discovered in 6 out of 1,033 (0.6 %) persons. One person carried two different E. coli isolates, one with blaCTX-M-1 and the other with blaCMY-2 and therefore the prevalence of persons carrying Enterobacteriaceae harboring ESBL and/or pAmpC genes was 5.2 %. In eight E. coli isolates the AmpC phenotype was caused by mutations in the AmpC promoter region. No carbapenemase genes were identified. A large variety of E. coli genotypes was found, ST131 and ST10 being most common. ESBL/pAmpC genes resembled those from

  18. Molecular characteristics of extended-spectrum cephalosporin-resistant Enterobacteriaceae from humans in the community.

    Directory of Open Access Journals (Sweden)

    Angela H A M van Hoek

    Full Text Available To investigate the molecular characteristics of extended-spectrum cephalosporin (ESC-resistant Enterobacteriaceae collected during a cross-sectional study examining the prevalence and risk factors for faecal carriage of extended-spectrum β-lactamase (ESBL-producing Enterobacteriaceae in humans living in areas with high or low broiler density.ESC-resistant Enterobacteriaceae were identified by combination disc-diffusion test. ESBL/AmpC/carbapenemase genes were analysed using PCR and sequencing. For E. coli, phylogenetic groups and MLST were determined. Plasmids were characterized by transformation and PCR-based replicon typing. Subtyping of plasmids was done by plasmid multilocus sequence typing.175 ESC-resistant Enterobacteriaceae were cultured from 165/1,033 individuals. The isolates were Escherichia coli(n=65, Citrobacter freundii (n=52, Enterobacter cloacae (n=38, Morganella morganii (n=5, Enterobacter aerogenes (n=4, Klebsiella pneumoniae (n=3, Hafnia alvei (n=2, Shigella spp. (n=2, Citrobacter amalonaticus (n=1, Escherichia hermannii (n=1, Kluyvera cryocrescens (n=1, and Pantoea agglomerans (n=1. The following ESBL genes were recovered in 55 isolates originating from 49 of 1,033 (4.7 % persons: blaCTX-M-1 (n=17, blaCTX-M-15 (n=16, blaCTX-M-14 (n=9, blaCTX-M-2 (n=3, blaCTX-M-3 (n=2, blaCTX-M-24 (n=2, blaCTX-M-27 (n=1, blaCTX-M-32 (n=1, blaSHV-12 (n=2, blaSHV-65 (n=1 and blaTEM-52 (n=1. Plasmidic AmpC (pAmpC genes were discovered in 6 out of 1,033 (0.6 % persons. One person carried two different E. coli isolates, one with blaCTX-M-1 and the other with blaCMY-2 and therefore the prevalence of persons carrying Enterobacteriaceae harboring ESBL and/or pAmpC genes was 5.2 %. In eight E. coli isolates the AmpC phenotype was caused by mutations in the AmpC promoter region. No carbapenemase genes were identified. A large variety of E. coli genotypes was found, ST131 and ST10 being most common.ESBL/pAmpC genes resembled those from patients in Dutch

  19. Clinical Characteristics of Patients with Gastroesophageal Reflux Disease Refractory to Proton Pump Inhibitors and the Effects of Switching to 20 mg Esomeprazole on Reflux Symptoms and Quality of Life.

    Science.gov (United States)

    Takeshima, Fuminao; Hashiguchi, Keiichi; Onitsuka, Yasunori; Tanigawa, Ken; Minami, Hitomi; Matsushima, Kayoko; Akazawa, Yuko; Shiozawa, Ken; Yamaguchi, Naoyuki; Taura, Naota; Ohnita, Ken; Ichikawa, Tatsuki; Isomoto, Hajime; Nakao, Kazuhiko

    2015-12-31

    BACKGROUND Refractory gastroesophageal reflux disease (GERD) may deteriorate patient quality of life (QOL) despite proton pump inhibitor (PPI) therapy. MATERIAL AND METHODS Nineteen Japanese institutions were surveyed to determine the clinical characteristics and QOL of patients with refractory GERD. Those patients treated with a conventional PPI were switched to 20 mg esomeprazole for 4 weeks. Symptoms and QOL were assessed using Global Overall Symptom and Gastrointestinal Symptom Rating Scale (GSRS) questionnaires at baseline and at 2 and/or 4 weeks of esomeprazole treatment. RESULTS Of 120 patients who completed the survey, 58 (48.3%) had refractory GERD. Of these, 69.0% were aged ≥ 65 years, 79.3% were prescribed a PPI at a standard or high dose, and 22.4% were prescribed a PPI together with another drug. After switching to esomeprazole, patients reported significant improvements in heartburn, acid regurgitation, and excessive belching at 2 weeks using a symptom diary, as well as the total score, reflux, abdominal pain, and indigestion, which were assessed using the GSRS at 4 weeks. CONCLUSIONS About half of Japanese patients with GERD may be refractory to conventional PPIs. Their reflux-related symptoms are often severe and may impair QOL. Switching to esomeprazole could be used to improve their symptoms and QOL.

  20. [Isolation and in vitro and in vivo characteristics of a clone of a wild Aujeszky disease virus resistant to bromovinyldeoxyuridine].

    Science.gov (United States)

    Bijlenga, G; Joubert, L; De Clercq, E

    1989-01-01

    The antiviral activity of bromovinyldeoxyuridine has been studied on the wild type of pseudorabies virus. A heterogenicity of viral populations has been observed. A resistant clone presented special characteristics both in vitro (large syncytia, round cells) and in vivo (reduced pathogenicity and immunogenic power).