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Sample records for relaxed sige buffer

  1. The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

    Science.gov (United States)

    Zaumseil, P; Kozlowski, G; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

    2012-09-07

    We study the growth and relaxation processes of Ge nano-clusters selectively grown by chemical vapor deposition on free-standing 90 nm wide Si(001) nano-pillars with a thin Si(0.23)Ge(0.77) buffer layer. We found that the dome-shaped SiGe layer with a height of about 28 nm as well as the Ge dot deposited on top of it partially relaxes, mainly by elastic lattice bending. The Si nano-pillar shows a clear compliance behavior-an elastic response of the substrate on the growing film-with the tensile strained top part of the pillar. Additional annealing at 800 °C leads to the generation of misfit dislocation and reduces the compliance effect significantly. This example demonstrates that despite the compressive strain generated due to the surrounding SiO(2) growth mask it is possible to realize an overall tensile strain in the Si nano-pillar and following a compliant substrate effect by using a SiGe buffer layer. We further show that the SiGe buffer is able to improve the structural quality of the Ge nano-dot.

  2. XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

    International Nuclear Information System (INIS)

    Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

    2005-01-01

    Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

  3. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    KAUST Repository

    Dong, Y.

    2014-07-26

    Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

  4. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    International Nuclear Information System (INIS)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

    2014-01-01

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  5. Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Weifeng; He, Yan; Ouyang, Gang, E-mail: gangouy@hunnu.edu.cn [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications(SICQEA), Hunan Normal University, Changsha 410081 (China); Sun, Changqing [School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2016-01-15

    The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interface bond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core can be modulated through covering with Ge epitaxial layers. The change of thermal conductivity in Si/Ge CSNWs should be attributed to the surface relaxation and interface mismatch between inner Si nanowire and outer Ge epitaxial layer. Our results are in well agreement with the experimental measurements and simulations, suggesting that the presented method provides a fundamental insight of the thermal conductivity of CSNWs from the atomistic origin.

  6. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    Energy Technology Data Exchange (ETDEWEB)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  7. Boron diffusion in strained and strain-relaxed SiGe

    International Nuclear Information System (INIS)

    Wang, C.C.; Sheu, Y.M.; Liu, Sally; Duffy, R.; Heringa, A.; Cowern, N.E.B.; Griffin, P.B.

    2005-01-01

    . Phys. 94 (September (6)) (2003) 3883-3890; S. Eguchi, C.N. Chleirigh, O.O. Olubuyide, J.L. Hoyt, Appl. Phys. Lett. 84 (January (3)) (2004) 368-370] in which the equilibrium state of point defects is achieved. These are not the conditions used in aggressive CMOS technologies. Our experiment has therefore been designed to investigate boron diffusion in both strained and strain-relaxed SiGe including ultra-low energy, high concentration boron implant and spike RTA. Models are proposed and the retardation factors corresponding to Ge concentration and stress effect were successfully extracted through these experiments. This paper describes these experiments, with the calibration and the resulting diffusion constants for an ultra-shallow boron junction in SiGe that is popular in advanced CMOS technology

  8. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    KAUST Repository

    Dong, Y.; Mooney, P. M.; Cai, F.; Anjum, Dalaver H.; Ur-Rehman, N.; Zhang, Xixiang; Xia, G. (Maggie)

    2014-01-01

    ”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced

  9. Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer

    Directory of Open Access Journals (Sweden)

    Gnilenko A. B.

    2015-12-01

    Full Text Available In spite of many efforts to propose new semiconductor materials and sophisticated constructions of solar cells, crystalline silicone remains the main photovoltaic material widely used up to now. There are various methods to enhance the efficiency of silicone solar cells. One of them is to combine silicone with an additional semiconductor material with the different bandgap to form a tandem construction. For example, the germanium sub-cell used as the bottom cascade for the silicone sub-cell in the tandem monolithic solar cell makes it possible to utilize the "red" sub-band of solar spectra increasing overall solar cell efficiency. The problem of the 4.2% mismatch in lattice constant between Si and Ge can be resolved in such a case by the use of SiGe buffer layer. In the paper the results of the computer simulation for Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer are presented. In the solar cell under consideration, the step graded Si1-xGex buffer layer is located between the top silicone and the bottom germanium cascades to reduce the threading dislocation density in mismatched materials. The cascades are commutated by the use of the germanium tunnel diode between the bottom sub-cell and the buffer layer. For the solar cell modeling, the physically-based device simulator ATLAS of Silvaco TCAD software is employed to predict the electrical behavior of the semiconductor structure and to provide a deep insight into the internal physical processes. The voltage-current characteristic, photovoltaic parameters and the distribution of basic physical values are obtained for the investigated tandem solar cell. The influence of layer thicknesses on the photovoltaic parameters is studied. The calculated efficiency of the tandem solar cell reaches 13% which is a quarter more than the efficiency of a simple silicone solar cell with the same constructive parameters and under the same illumination conditions.

  10. The structural and electrical characterisation of SiGe heterostructures deposited on strain relaxed virtual substrates

    International Nuclear Information System (INIS)

    Hammond, R.

    1998-09-01

    The influence of lateral dimensions on the relaxation mechanism and the resulting effect on the surface topography of limited-area, linearly graded Si 1-x Ge x virtual substrates has been investigated for the first time. A dramatic change in the relaxation mechanism of such buffer layers has been observed for depositions on Si mesa pillars of lateral dimensions of 10μm and below. For such depositions, misfit dislocations are able to extend, unhindered, and terminate at the edges of the growth zone. In this manner, orthogonal misfit dislocation interactions are avoided, yielding a surface free of the problematic surface cross-hatch roughening. However, as the lateral dimension of the growth zone is increased to 20μm, orthogonal misfit interactions occur and relaxation is dominated by the Modified Frank-Read (MFR) multiplication mechanism. The resulting surface morphology shows a pronounced surface cross-hatch roughening. It is proposed that such cross-hatch roughening is a direct consequence of the cooperative stress fields associated with the MFR mechanism. It is postulated that the method of limited-area, linearly graded buffer layers provides a unique opportunity, by which 'ideal' virtual substrates, free of surface cross-hatch and threading dislocations, may be produced to any Ge content. In addition, a unique method by which the electrical performance of low temperature, strained layer depositions may be optimised is discussed. The method relies on the elimination of as-grown lattice imperfections via a post growth thermal anneal treatment. A 25-fold increase in low temperature hole mobility of a Si 0.5 Ge 0.5 /Si 0.7 Ge 0.3 heterostructure has been demonstrated using a 30minute, 750 deg C in-situ, post growth anneal. (author)

  11. Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator

    International Nuclear Information System (INIS)

    Kim, Tae-Hyun; Park, Jea-Gun

    2013-01-01

    We investigated the combined effect of the strained Si channel and hole confinement on the memory margin enhancement for a capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator (ε-Si SGOI). The memory margin for the ε-Si SGOI capacitor-less memory cell was higher than that of the memory cell fabricated on an unstrained Si-on-insulator (SOI) and increased with increasing Ge concentration of the relaxed SiGe layer; i.e. the memory margin for the ε-Si SGOI capacitor-less memory cell (138.6 µA) at a 32 at% Ge concentration was 3.3 times higher than the SOI capacitor-less memory cell (43 µA). (paper)

  12. Relaxation to equilibrium following photoacid dissociation in mineral acids and buffer solutions

    International Nuclear Information System (INIS)

    Pines, D; Nibbering, E T J; Pines, E

    2007-01-01

    The relaxation to the dissociation equilibrium of a weak acid undergoing a transient pK a change in the presence of a strong mineral acid has been the subject of considerable interest both experimentally and theoretically. Here we compare this process with the analogue event taking place in a buffer solution of a weak carboxylic acid. The comparison has been performed in identical pH and ionic strength conditions and at a sufficiently short timescale where the buffer can only affect the weak acid relaxation by proton scavenging. Although the two relaxation processes have been found to differ in their temporal behaviour, they have both resulted in identical equilibrium amplitudes of the photoacid. This observation reassures the well-known chemical wisdom that pK a values measured in buffer solutions do not depend on the specific chemical reactivity of the buffer. We analyse the essentially many-body relaxation problem in terms of a re-normalized geminate recombination reaction which persists over longer times than the exponential relaxation to equilibrium of homogenously distributed populations of the reactants

  13. More is less: Learning but not relaxing buffers deviance under job stressors.

    Science.gov (United States)

    Zhang, Chen; Mayer, David M; Hwang, Eunbit

    2018-02-01

    Workplace deviance harms the well-being of an organization and its members. Unfortunately, theory and prior research suggest that deviance is associated with job stressors, which are endemic to work organizations and often cannot be easily eliminated. To address this conundrum, we explore actions individuals can take at work that serve as buffering conditions for the positive relationship between job stressors and deviant behavior. Drawing upon conservation of resources theory, we examine a resource-building activity (i.e., learning something new at work) and a demand-shielding activity (i.e., taking time for relaxation at work) as potential boundary conditions. In 2 studies with employee samples using complementary designs, we find support for the buffering role of learning but not for relaxation. When employees learn new things at work, the relationship between hindrance stressors and deviance is weaker; as is the indirect relationship mediated by negative emotions. Taking time for relaxation at work did not show a moderating role in either study. Therefore, although relaxation is a response that individuals might be inclined to turn to for counteracting work stress, our findings suggest that, when it comes to addressing negative emotions and deviance in stressful work environments, building positive resources by learning something new at work could be more useful. In that way, doing more (i.e., learning, and not relaxing) is associated with less (deviance) in the face of job stressors. (PsycINFO Database Record (c) 2018 APA, all rights reserved).

  14. Simultaneous Buffer-sizing and Wire-sizing for Clock Trees Based on Lagrangian Relaxation

    Directory of Open Access Journals (Sweden)

    Yu-Min Lee

    2002-01-01

    Full Text Available Delay, power, skew, area and sensitivity are the most important concerns in current clock-tree design. We present in this paper an algorithm for simultaneously optimizing the above objectives by sizing wires and buffers in clock trees. Our algorithm, based on Lagrangian relaxation method, can optimally minimize delay, power and area simultaneously with very low skew and sensitivity. With linear storage overall and linear runtime per iteration, our algorithm is extremely economical, fast and accurate; for example, our algorithm can solve a 6201-wire-segment clock-tree problem using about 1-minute runtime and 1.3-MB memory and still achieve pico-second precision on an IBM RS/6000 workstation.

  15. Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

    NARCIS (Netherlands)

    Plissard, S.R.; Coinon, C.; Androussi, Y.; Wallart, X.

    2010-01-01

    The strain relaxation in low mismatched InxAl1-xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first "strained

  16. Impact of Channel, Stress-Relaxed Buffer, and S/D Si1- x Ge x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering

    Science.gov (United States)

    Othman, Nurul Aida Farhana; Hatta, Sharifah Fatmadiana Wan Muhamad; Soin, Norhayati

    2018-04-01

    Stress-engineered fin-shaped field effect transistors (FinFET) using germanium (Ge) is a promising performance booster to replace silicon (Si) due to its high holes mobility. This paper presents a three-dimensional simulation by the Sentaurus technology computer-aided design to study the effects of stressors—channel stress, stress-relaxed buffer (SRB), and source/drain (S/D) epitaxial stress—on different bases of FinFET, specifically silicon germanium (SiGe) and Ge-based, whereby the latter is achieved by manipulating the Ge mole fraction inside the three layers; their effects on the devices' figures-of-merits were recorded. The simulation generates an advanced calibration process, by which the drift diffusion simulation was adopted for ballistic transport effects. The results show that current enhancement in p-type FinFET (p-FinFET) with 110% is almost twice that in n-type FinFET (n-FinFET) with 57%, with increasing strain inside the channel suggesting that the use of strain is more effective for holes. In SiGe-based n-FinFET, the use of a high-strained SRB layer can improve the drive current up to 112%, while the high-strain S/D epitaxial for Ge-based p-FinFET can enhance the on-state current to 262%. Further investigations show that the channel and S/D doping are affecting the performances of SiGe-based FinFET with similar importance. It is observed that doping concentrations play an important role in threshold voltage adjustment as well as in drive current and subthreshold leakage improvements.

  17. Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

    2014-01-01

    Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

  18. On the Use of Molecular Weight Cutoff Cassettes to Measure Dynamic Relaxivity of Novel Gadolinium Contrast Agents: Example Using Hyaluronic Acid Polymer Complexes in Phosphate-Buffered Saline

    Directory of Open Access Journals (Sweden)

    Nima Kasraie

    2011-01-01

    Full Text Available The aims of this study were to determine whether standard extracellular contrast agents of Gd(III ions in combination with a polymeric entity susceptible to hydrolytic degradation over a finite period of time, such as Hyaluronic Acid (HA, have sufficient vascular residence time to obtain comparable vascular imaging to current conventional compounds and to obtain sufficient data to show proof of concept that HA with Gd-DTPA ligands could be useful as vascular imaging agents. We assessed the dynamic relaxivity of the HA bound DTPA compounds using a custom-made phantom, as well as relaxation rates at 10.72 MHz with concentrations ranging between 0.09 and 7.96 mM in phosphate-buffered saline. Linear dependences of static longitudinal relaxation rate (R1 on concentration were found for most measured samples, and the HA samples continued to produce high signal strength after 24 hours after injection into a dialysis cassette at 3T, showing superior dynamic relaxivity values compared to conventional contrast media such as Gd-DTPA-BMA.

  19. UV-Photoreflectance and Raman Characterization of Strain Relaxation in Si on Silicon-Germanium Films

    International Nuclear Information System (INIS)

    Current, Michael; Chism, Will; Yoo, Woo Sik; Vartanian, Victor

    2011-01-01

    Photoreflectance (PR), using a uv (374 nm) diode laser probe beam, and Raman spectroscopy, using a multi-wavelength Ar + laser coupled to a high-resolution multi-wavelength spectrometer, were used to characterize the strain relaxation of Si top layers grown on a graded and relaxed SiGe buffer stack with a final Ge concentration of 20%. The Si top layer thicknesses ranged from 1.6 to 18 nm. Considerable radial variation in the strain relaxation was seen in all sampled wafers, highlighting the need for rapid, local strain characterization. Strong correlation between shift in the Si layer dielectric response, measured by uv-PR, and the Si top layer strain, measured by Raman, is reported.

  20. Conformational exchange in pseudoazurin: different kinds of microsecond to millisecond dynamics characterized by their pH and buffer dependence using 15N NMR relaxation.

    Science.gov (United States)

    Hass, Mathias A S; Vlasie, Monica D; Ubbink, Marcellus; Led, Jens J

    2009-01-13

    The dynamics of the reduced form of the blue copper protein pseudoazurin from Alcaligenes faecalis S-6 was investigated using (15)N relaxation measurements with a focus on the dynamics of the micro- to millisecond time scale. Different types of conformational exchange processes are observed in the protein on this time scale. At low pH, the protonation of the C-terminal copper-ligated histidine, His81, is observed. A comparison of the exchange rates in the presence and absence of added buffers shows that the protonation is the rate-limiting step at low buffer concentrations. This finding agrees with previous observations for other blue copper proteins, e.g., amicyanin and plastocyanin. However, in contrast to plastocyanin but similar to amicyanin, a second conformational exchange between different conformations of the protonated copper site is observed at low pH, most likely triggered by the protonation of His81. This process has been further characterized using CPMG dispersion methods and is found to occur with a rate of a few thousands per second. Finally, micro- to millisecond motions are observed in one of the loop regions and in the alpha-helical regions. These motions are unaffected by pH and are unrelated to the conformational changes in the active site of pseudoazurin.

  1. Assessment of the growth/etch back technique for the production of Ge strain-relaxed buffers on Si

    Science.gov (United States)

    Hartmann, J. M.; Aubin, J.

    2018-04-01

    Thick Ge layers grown on Si(0 0 1) are handy for the production of GeOI wafers, as templates for the epitaxy of III-V and GeSn-based heterostructures and so on. Perfecting their crystalline quality would enable to fabricate suspended Ge micro-bridges with extremely high levels of tensile strain (for mid IR lasers). In this study, we have used a low temperature (400 °C)/high temperature (750 °C) approach to deposit with GeH4 various thickness Ge layers in the 0.5 μm - 5 μm range. They were submitted afterwards to short duration thermal cycling under H2 (in between 750 °C and 875-890 °C) to lower the Threading Dislocation Density (TDD). Some of the thickest layers were partly etched at 750 °C with gaseous HCl to recover wafer bows compatible with device processing later on. X-ray Diffraction (XRD) showed that the layers were slightly tensile-strained, with a 104.5-105.5% degree of strain relaxation irrespective of the thickness. The surface was cross-hatched, with a roughness slightly decreasing with the thickness, from 2.0 down to 0.8 nm. The TDD (from Omega scans in XRD) decreased from 8 × 107 cm-2 down to 107 cm-2 as the Ge layer thickness increased from 0.5 up to 5 μm. The lack of improvement when growing 5 μm thick layers then etching a fraction of them with HCl over same thickness layers grown in a single run was at variance with Thin Solid Films 520, 3216 (2012). Low temperature HCl defect decoration confirmed those findings, with (i) a TDD decreasing from slightly more 107 cm-2 down to 5 × 106 cm-2 as the Ge layer thickness increased from 1.3 up to 5 μm and (ii) no TDD hysteresis between growth and growth then HCl etch-back.

  2. Improved thermal stability and hole mobilities in a strained-Si/strained-Si1-yGe y/strained-Si heterostructure grown on a relaxed Si1-xGe x buffer

    International Nuclear Information System (INIS)

    Gupta, Saurabh; Lee, Minjoo L.; Isaacson, David M.; Fitzgerald, Eugene A.

    2005-01-01

    A dual channel heterostructure consisting of strained-Si/strained-Si 1-y Ge y on relaxed Si 1-x Ge x (y > x), provides a platform for fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) with high hole mobilities (μ eff ) which depend directly on Ge concentration and strain in the strained-Si 1-y Ge y layer. Ge out-diffuses from the strained-Si 1-y Ge y layer into relaxed Si 1-x Ge x during high temperature processing, reducing peak Ge concentration and strain in the strained-Si 1-y Ge y layer and degrades hole μ eff in these dual channel heterostructures. A heterostructure consisting of strained-Si/strained-Si 1-y Ge y /strained-Si, referred to as a trilayer heterostructure, grown on relaxed Si 1-x Ge x has much reduced Ge out-flux from the strained-Si 1-y Ge y layer and retains higher μ eff after thermal processing. Improved hole μ eff over similar dual channel heterostructures is also observed in this heterostructure. This could be a result of preventing the hole wavefunction tunneling into the low μ eff relaxed Si 1-x Ge x layer due to the additional valence band offset provided by the underlying strained-Si layer. A diffusion coefficient has been formulated and implemented in a finite difference scheme for predicting the thermal budget of the strained SiGe heterostructures. It shows that the trilayer heterostructures have superior thermal budgets at higher Ge concentrations. Ring-shaped MOSFETs were fabricated on both platforms and subjected to various processing temperatures in order to compare the extent of μ eff reduction with thermal budget. Hole μ eff enhancements are retained to a much higher extent in a trilayer heterostructure after high temperature processing as compared to a dual channel heterostructure. The improved thermal stability and hole μ eff of a trilayer heterostructure makes it an ideal platform for fabricating high μ eff MOSFETs that can be processed over higher temperatures without significant losses in hole

  3. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Science.gov (United States)

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-06

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  4. Growth and characterization of highly tensile strained Ge{sub 1−x}Sn{sub x} formed on relaxed In{sub y}Ga{sub 1−y}P buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wei; D' Costa, Vijay Richard; Dong, Yuan; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Loke, Wan Khai; Yoon, Soon Fatt [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Yin, Tingting; Shen, Zexiang [School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore 138634 (Singapore); Tok, Eng Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2016-03-28

    Ge{sub 0.94}Sn{sub 0.06} films with high tensile strain were grown on strain-relaxed In{sub y}Ga{sub 1−y}P virtual substrates using solid-source molecular beam epitaxy. The in-plane tensile strain in the Ge{sub 0.94}Sn{sub 0.06} film was varied by changing the In mole fraction in In{sub x}Ga{sub 1−x}P buffer layer. The tensile strained Ge{sub 0.94}Sn{sub 0.06} films were investigated by transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. An in-plane tensile strain of up to 1% in the Ge{sub 0.94}Sn{sub 0.06} was measured, which is much higher than that achieved using other buffer systems. Controlled thermal anneal experiment demonstrated that the strain was not relaxed for temperatures up to 500 °C. The band alignment of the tensile strained Ge{sub 0.94}Sn{sub 0.06} on In{sub 0.77}Ga{sub 0.23}P was obtained by high resolution x-ray photoelectron spectroscopy. The Ge{sub 0.94}Sn{sub 0.06}/In{sub 0.77}Ga{sub 0.23}P interface was found to be of the type I band alignment, with a valence band offset of 0.31 ± 0.12 eV and a conduction band offset of 0.74 ± 0.12 eV.

  5. Extended x-ray absorption fine structure studies of amorphous and crystalline Si-Ge alloys with synchrotron radiation

    International Nuclear Information System (INIS)

    Kajiyama, Hiroshi

    1988-01-01

    Extended X-ray absorption fine structure (EXAFS) is a powerful probe to study the local structure around the atom of a specific element. In conventional EXAFS analysis, it has been known that reliable structures are obtained with the different values of absorption edge energy for different neighboring atoms. It is shown in this study that the Ge-K edge EXAFS resulting from the Ge-Ge and Ge-Si bonds in hydrogenated amorphous Si-Ge alloys was able to be excellently explained by a unique absorption edge energy value, provided that a newly developed formula based on the spherical wave function of photoelectrons is used. The microscopic structures of hydrogenated amorphous Si-Ge alloys and crystalline Si-Ge alloys have been determined using the EXAFS method. The lengths of Ge-Ge and Ge-Si bonds were constant throughout their entire composition range, and it was found that the length of Ge-Si bond was close to the average value of the bond lengths of both Ge and Si crystals. In crystalline Si-Ge alloys, it has been shown that the bonds relaxed completely, while the lattice constant varied monotonously with the composition. (Kako, I.)

  6. Band structure analysis in SiGe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

    2012-06-05

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  7. Band structure analysis in SiGe nanowires

    International Nuclear Information System (INIS)

    Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

    2012-01-01

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  8. A SiGe High Gain and Highly Linear F-Band Single-Balanced Subharmonic Mixer

    OpenAIRE

    Seyedhosseinzadeh, Neda; Nabavi, Abdolreza; Carpenter, Sona; He, Zhongxia Simon; Bao, Mingquan; Zirath, Herbert

    2017-01-01

    A compact, broadband, high gain, second-order active down-converter subharmonic mixer is demonstrated using a 130-nm SiGe BiCMOS technology. The mixer adopts a bottom-LO Gilbert topology, on-chip RF and LO baluns and two emitter-follower buffers to realize a high gain wideband operation in both RF and IF frequencies. The measured performance exhibits a flat conversion gain (CG) of about 11 dB from 90 to 130 GHz with an average LO power of +3 dBm and high 2LO-RF isolation better than 60 dB. Th...

  9. On the interplay between phonon-boundary scattering and phonon-point-defect scattering in SiGe thin films

    Science.gov (United States)

    Iskandar, A.; Abou-Khalil, A.; Kazan, M.; Kassem, W.; Volz, S.

    2015-03-01

    This paper provides theoretical understanding of the interplay between the scattering of phonons by the boundaries and point-defects in SiGe thin films. It also provides a tool for the design of SiGe-based high-efficiency thermoelectric devices. The contributions of the alloy composition, grain size, and film thickness to the phonon scattering rate are described by a model for the thermal conductivity based on the single-mode relaxation time approximation. The exact Boltzmann equation including spatial dependence of phonon distribution function is solved to yield an expression for the rate at which phonons scatter by the thin film boundaries in the presence of the other phonon scattering mechanisms. The rates at which phonons scatter via normal and resistive three-phonon processes are calculated by using perturbation theories with taking into account dispersion of confined acoustic phonons in a two dimensional structure. The vibrational parameters of the model are deduced from the dispersion of confined acoustic phonons as functions of temperature and crystallographic direction. The accuracy of the model is demonstrated with reference to recent experimental investigations regarding the thermal conductivity of single-crystal and polycrystalline SiGe films. The paper describes the strength of each of the phonon scattering mechanisms in the full temperature range. Furthermore, it predicts the alloy composition and film thickness that lead to minimum thermal conductivity in a single-crystal SiGe film, and the alloy composition and grain size that lead to minimum thermal conductivity in a polycrystalline SiGe film.

  10. Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

    KAUST Repository

    Zhou, Guangnan

    2018-04-03

    Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

  11. Influence of alloy disorder scattering on the hole mobility of SiGe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Blanque, Celso; Ruiz, Francisco G., E-mail: franruiz@ugr.es; Godoy, Andres, E-mail: agodoy@ugr.es; Marin, Enrique G.; Donetti, Luca; Gámiz, Francisco [Dpto. de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

    2014-12-28

    In this work, we analyze the influence of the alloy disorder (AD) scattering on the low-field hole mobility of Si{sub 1-x}Ge{sub x} nanowires (NWs). To do it, the electrostatic description is achieved through a self-consistent solution of the Poisson equation and the six-band k⋅p method in the cross section of the NW. The momentum relaxation time approximation is used to calculate the hole mobility, including alloy disorder and phonon scattering mechanisms, and the use of approximations to calculate the overlap integrals for the scattering matrix elements is discussed. We study the influence of the alloy disorder scattering on the total mobility compared to the phonon contribution, for different values of the AD scattering parameter proposed in the literature, and analyze the performance of SiGe NWs as a function of the Ge molar fraction for both low and high inversion charge densities.

  12. Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

    KAUST Repository

    Zhou, Guangnan; Lee, Kwang Hong; Anjum, Dalaver H.; Zhang, Qiang; Zhang, Xixiang; Tan, Chuan Seng; Xia, Guangrui

    2018-01-01

    Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

  13. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    International Nuclear Information System (INIS)

    Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

    2014-01-01

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach

  14. Surface tension and density of Si-Ge melts

    Science.gov (United States)

    Ricci, Enrica; Amore, Stefano; Giuranno, Donatella; Novakovic, Rada; Tuissi, Ausonio; Sobczak, Natalia; Nowak, Rafal; Korpala, Bartłomiej; Bruzda, Grzegorz

    2014-06-01

    In this work, the surface tension and density of Si-Ge liquid alloys were determined by the pendant drop method. Over the range of measurements, both properties show a linear temperature dependence and a nonlinear concentration dependence. Indeed, the density decreases with increasing silicon content exhibiting positive deviation from ideality, while the surface tension increases and deviates negatively with respect to the ideal solution model. Taking into account the Si-Ge phase diagram, a simple lens type, the surface tension behavior of the Si-Ge liquid alloys was analyzed in the framework of the Quasi-Chemical Approximation for the Regular Solutions model. The new experimental results were compared with a few data available in the literature, obtained by the containerless method.

  15. Efficient tunable luminescence of SiGe alloy sheet polymers

    International Nuclear Information System (INIS)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-01-01

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics

  16. Substrate Effects in Wideband SiGe HBT Mixer Circuits

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2005-01-01

    are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.......In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations...

  17. Heavy Ion Current Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.; hide

    2009-01-01

    Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

  18. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    OpenAIRE

    Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC

    2016-01-01

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native Si...

  19. Buffers Plus

    Science.gov (United States)

    Ramette, Richard W.

    1998-11-01

    In 1989 JCE Software published The Acid-Base Package: A Collection of Useful Programs for Proton Transfer Systems (Ramette, R. W. J. Chem. Educ. Software 1989, 2B No. 2). This DOS program has been fully upgraded by the same author to the world of Windows 95. Buffers Plus takes advantage of a modern user interface and offers many new options not possible in the original version.

  20. Buffer fluid

    Energy Technology Data Exchange (ETDEWEB)

    Mirzadzhanzade, A Kh; Dedusanko, G Ya; Dinaburg, L S; Markov, Yu M; Rasizade, Ya N; Rozov, V N; Sherstnev, N M

    1979-08-30

    A drilling fluid is suggested for separating the drilling and plugging fluids which contains as the base increased solution of polyacrylamide and additive. In order to increase the viscoelastic properties of the liquid with simultaneous decrease in the periods of its fabrication, the solution contains as an additive dry bentonite clay. In cases of the use of a buffer fluid under conditions of negative temperatures, it is necessary to add to it table salt or ethylene glycol.

  1. Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

    CERN Document Server

    Usami, N

    2011-01-01

    Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...

  2. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

    2016-01-01

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  3. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  4. Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

    International Nuclear Information System (INIS)

    Beaty, J.S.; Rolfe, J.L.; Vandersande, J.; Fleurial. J.P.

    1992-01-01

    This paper reports that a theoretical model has been developed that predicts that the addition of ultra-fine, inert, phonon-scattering centers to SiGe thermoelectric material will reduce its thermal conductivity and improve its figure-of-merit. To investigate this prediction, ultra-fine particulates (20 Angstrom to 200 Angstrom) of boron nitride have been added to boron doped, p-type, 80/20 SiGe. All previous SiGe samples produced from ultra-fine SiGe powder without additions had lower thermal conductivities than standard SiGe, but high temperature (1525 K) heat treatment increased their thermal conductivity back to the value for standard SiGe. Transmission Electron Microscopy has been used to confirm the presence of occluded particulates and X-ray diffraction has been used to determine the composition to be BN

  5. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

    2018-01-01

    that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

  6. Buffer mass test - Buffer materials

    International Nuclear Information System (INIS)

    Pusch, R.; Boergesson, L.

    1982-08-01

    Commercial Na bentonite (MX-80) is the clay component of the buffer material in the heater holes as well of the tunnel backfill. Important characteristics are the clay content, liquid limit, X-ray diffraction pattern, water content, and degree of granulation. The ballast material consists of quartz-rich sand and feldspar-rich filler. The preparation of highly compacted bentonite for the near-field isolation of the canister was made by using isostatic compaction technique. The resulting dense bentonite core was cut into regularly shaped blocks which were arranged around each heater and lowered as one unit - heavily instrumented - in the respective deposition holes. For three of the six holes a narrow slot was left open between the bentonite stack and the rock; for the remaining ones a wider slot was chosen with a fill of soft bentonite powder. Both arrangements are expected to yield an ultimate bulk density which is sufficiently high to fulfil the requirement of a negligible permeability and a sufficient swelling pressure as well as heat conductivity, which are the essential parameters. The tunnel backfill, which consists of a mixture of suitably graded ballast material and MX-80 powder, has a considerably lower swelling pressure and heat conductivity, and a higher permeability, all these parameters still within the requirements of the KBS 2 concept. The various zones with different bentonite/sand ratios and the technique to apply them are described in the final part of the report. (Author)

  7. The enhancement of the interdiffusion in Si/Ge amorphous artificial multilayers by additions of B and Au

    International Nuclear Information System (INIS)

    Park, B.; Spaepen, F.; Poate, J.M.; Jacobson, D.C.

    1990-01-01

    Amorphous Si/amorphous Ge artificial multilayers were prepared by ion beam sputtering. Boron or gold impurities were introduced into the Si/Ge multilayers by ion implantation or during the sputtering deposition. Diffusion coefficients were determined by measuring the decrease in the intensity of the first order X-ray diffraction peak resulting from the composition modulation. It was found that the interdiffusion of Si and Ge in their amorphous phase can be enhanced by doping. The enhancement factor is independent of the degree of structural relaxation, as observed by the decrease of diffusivity with annealing time, of the amorphous phase. A model is proposed that describes this behavior in terms of electronic effects, introduced by the dopants, on the pre-existing structural defects governing diffusion

  8. Conversion Matrix Analysis of SiGe HBT Gilbert Cell Mixers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2004-01-01

    The frequency response of SiGe HBT active mixers based on the Gilbert cell topology is analyzed theoretically. The time-varying operation of the Gilbert cell mixer is taken into account by applying conversion matrix analysis. The main bandwidth limiting mechanisms experienced in SiGe HBT Gilbert ...

  9. Relaxation System

    Science.gov (United States)

    1987-01-01

    Environ Corporation's relaxation system is built around a body lounge, a kind of super easy chair that incorporates sensory devices. Computer controlled enclosure provides filtered ionized air to create a feeling of invigoration, enhanced by mood changing aromas. Occupant is also surrounded by multidimensional audio and the lighting is programmed to change colors, patterns, and intensity periodically. These and other sensory stimulators are designed to provide an environment in which the learning process is stimulated, because research has proven that while an individual is in a deep state of relaxation, the mind is more receptive to new information.

  10. Diffusion Mechanisms and Lattice Locations of Thermal-Equilibrium Defects in Si-Ge Alloys

    CERN Multimedia

    Lyutovich, K; Touboltsev, V; Laitinen, P O; Strohm, A

    2002-01-01

    It is generally accepted that Ge and Si differ considerably with respect to intrinsic-point-defect-mediated diffusion. In Ge, the native point defects dominating under thermal-equilibium conditions at all solid-state temperatures accessible in diffusion experiments are vacancies, and therefore Ge self-diffusion is vacancy-controlled. In Si, by contrast, self-interstitials and vacancies co-exist in thermal equilibrium. Whereas in the most thoroughly investigated temperature regime above about 1000$^\\circ$C Si self-diffusion is self-interstitial-controlled, it is vacancy-controlled at lower temperatures. According to the scenario displayed above, self-diffusion in Si-Ge alloys is expected to change from an interstitialcy mechanism on the Si side to a vacancy mechanism on the Ge side. Therefore, $^{71}$Ge self-diffusion experiments in Si$_{1- \\it y}$Ge$_{\\it y}$ as a function of composition Y are highly interesting. In a first series of experiments the diffusion of Ge in 0.4 to 10 $\\mu$m thick, relaxed, low-disl...

  11. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo

    2018-04-14

    The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

  12. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Science.gov (United States)

    Prakash, A. P. Gnana; Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-01

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to 60Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  13. Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

    International Nuclear Information System (INIS)

    Qin, Guoxuan; Jiang, Ningyue; Seo, Jung-Hun; Cho, Namki; Van der Weide, Daniel; Ma, Zhenqiang; Ponchak, George E; Ma, Pingxi; Stetson, Scott; Racanelli, Marco

    2010-01-01

    The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔE g /kT) and minimized thermal effects, with little influence on the passive components of the circuits

  14. Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

    Directory of Open Access Journals (Sweden)

    Chie-In Lee

    2016-01-01

    Full Text Available Noise parameters of silicon germanium (SiGe heterojunction bipolar transistors (HBTs for different sizes are investigated in the breakdown region for the first time. When the emitter length of SiGe HBTs shortens, minimum noise figure at breakdown decreases. In addition, narrower emitter width also decreases noise figure of SiGe HBTs in the avalanche region. Reduction of noise performance for smaller emitter length and width of SiGe HBTs at breakdown resulted from the lower noise spectral density resulting from the breakdown mechanism. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. The presented analysis can benefit the RF circuits operating in the breakdown region.

  15. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in; Praveen, K. C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332 (United States)

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  16. A Physics-Based Engineering Methodology for Calculating Soft Error Rates of Bulk CMOS and SiGe Heterojunction Bipolar Transistor Integrated Circuits

    Science.gov (United States)

    Fulkerson, David E.

    2010-02-01

    This paper describes a new methodology for characterizing the electrical behavior and soft error rate (SER) of CMOS and SiGe HBT integrated circuits that are struck by ions. A typical engineering design problem is to calculate the SER of a critical path that commonly includes several circuits such as an input buffer, several logic gates, logic storage, clock tree circuitry, and an output buffer. Using multiple 3D TCAD simulations to solve this problem is too costly and time-consuming for general engineering use. The new and simple methodology handles the problem with ease by simple SPICE simulations. The methodology accurately predicts the measured threshold linear energy transfer (LET) of a bulk CMOS SRAM. It solves for circuit currents and voltage spikes that are close to those predicted by expensive 3D TCAD simulations. It accurately predicts the measured event cross-section vs. LET curve of an experimental SiGe HBT flip-flop. The experimental cross section vs. frequency behavior and other subtle effects are also accurately predicted.

  17. Investigating ESD sensitivity in electrostatic SiGe MEMS

    International Nuclear Information System (INIS)

    Sangameswaran, Sandeep; De Coster, Jeroen; Linten, Dimitri; Scholz, Mirko; Thijs, Steven; Groeseneken, Guido; De Wolf, Ingrid

    2010-01-01

    The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.

  18. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  19. Templated self-assembly of SiGe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dais, Christian

    2009-08-19

    This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

  20. Buffer Zone Fact Sheets

    Science.gov (United States)

    New requirements for buffer zones and sign posting contribute to soil fumigant mitigation and protection for workers and bystanders. The buffer provides distance between the pesticide application site and bystanders, reducing exposure risk.

  1. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Science.gov (United States)

    Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

    2017-11-01

    In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  2. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Directory of Open Access Journals (Sweden)

    Abd Rahim Alhan Farhanah

    2017-01-01

    Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  3. Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

    International Nuclear Information System (INIS)

    Jiang, Z.X.; Kim, K.; Lerma, J.; Corbett, A.; Sieloff, D.; Kottke, M.; Gregory, R.; Schauer, S.

    2006-01-01

    This work explored quantitative analyses of SiGe films on either Si bulk or SOI wafers with low energy SIMS by assuming a constant ratio between the secondary ion yields of Si + and Ge + inside SiGe films. SiGe samples with Ge contents ranging from 15 to 65% have been analyzed with a 1 keV O 2 + beam at normal incidence. For comparison, the samples were also analyzed with RBS and/or AES. The Ge content as measured with SIMS, based on a single SiGe/Si or SiGe/SOI standard, exhibited good agreement with the corresponding RBS and AES data. It was concluded that SIMS was capable of providing accurate characterization of the SiGe composition with the Ge content up to 65%

  4. Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Dodd, Paul E.; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philippe; Duhamel, Olivier; Phillips, Stanley D.; hide

    2009-01-01

    SiGe HBT heavy ion current transients are measured using microbeam and both high- and low-energy broadbeam sources. These new data provide detailed insight into the effects of ion range, LET, and strike location.

  5. SiGe HBTs Optimization for Wireless Power Amplifier Applications

    Directory of Open Access Journals (Sweden)

    Pierre-Marie Mans

    2010-01-01

    Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

  6. Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire.

    Science.gov (United States)

    Mu, Xin; Wang, Lili; Yang, Xueming; Zhang, Pu; To, Albert C; Luo, Tengfei

    2015-11-16

    Due to interfacial phonon scattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have very low thermal conductivity, which is very attractive for thermoelectrics. In this paper, we demonstrate using molecular dynamics simulations that the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW). The structural hierarchy introduces defects to disrupt the periodicity of regular SNW and scatters coherent phonons, which are the key contributors to thermal transport in regular SNW. Our simulation results show that periodically arranged defects in Si/Ge H-SNW lead to a ~38% reduction of the already low thermal conductivity of regular Si/Ge SNW. By randomizing the arrangement of defects and imposing additional surface complexities to enhance phonon scattering, further reduction in thermal conductivity can be achieved. Compared to pure Si nanowire, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%. It is concluded that the hierarchical structuring is an effective way of reducing thermal conductivity significantly in SNW, which can be a promising path for improving the efficiency of Si/Ge-based SNW thermoelectrics.

  7. Relaxation of quadrupole orientation in an optically pumped alkali vapour

    Energy Technology Data Exchange (ETDEWEB)

    Bernabeu, E; Tornos, J

    1985-04-01

    The relaxation of quadrupole orientation (alignment) in an optically pumped alkali vapour is theoretically studied by taking into account the relaxation processes by alkali-buffer gas, alkali-alkali with spin exchange and alkali-cell wall (diffusion process) collisions. The relaxation transients of the quadrupole orientation are obtained by introducing a first-order weak-pumping approximation (intermediate pumping) less restrictive than the usually considered (zeroth order) one.

  8. Redox Buffer Strength

    Science.gov (United States)

    de Levie, Robert

    1999-04-01

    The proper functioning of enzymes in bodily fluids requires that the pH be maintained within rather narrow limits. The first line of defense against large pH fluctuations in such fluids is the passive control provided by the presence of pH buffers. The ability of pH buffers to stabilize the pH is indicated by the buffer value b introduced in 1922 by van Slyke. It is equally important for many enzymes that the redox potential is kept within a narrow range. In that case, stability of the potential is most readily achieved with a redox buffer. In this communication we define the redox buffer strength by analogy with acid-base buffer strength.

  9. Organellar Calcium Buffers

    Science.gov (United States)

    Prins, Daniel; Michalak, Marek

    2011-01-01

    Ca2+ is an important intracellular messenger affecting many diverse processes. In eukaryotic cells, Ca2+ storage is achieved within specific intracellular organelles, especially the endoplasmic/sarcoplasmic reticulum, in which Ca2+ is buffered by specific proteins known as Ca2+ buffers. Ca2+ buffers are a diverse group of proteins, varying in their affinities and capacities for Ca2+, but they typically also carry out other functions within the cell. The wide range of organelles containing Ca2+ and the evidence supporting cross-talk between these organelles suggest the existence of a dynamic network of organellar Ca2+ signaling, mediated by a variety of organellar Ca2+ buffers. PMID:21421925

  10. An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.

    Science.gov (United States)

    Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

    2012-12-17

    An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

  11. Si/Ge intermixing during Ge Stranski–Krastanov growth

    Directory of Open Access Journals (Sweden)

    Alain Portavoce

    2014-12-01

    Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

  12. Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy

    International Nuclear Information System (INIS)

    Tan, P.H.; Bougeard, D.; Abstreiter, G.; Brunner, K.

    2005-01-01

    We characterized strain and Ge content depending on depth in a self-assembled Si/Ge dot multilayer by scanning a microscopic Raman probe at a (110) cleavage plane. The multilayer structure was deposited by molecular-beam epitaxy on a (001) Si substrate and consisted of 80 periods, each of them composed by 25 nm Si spacers and 8 monolayer Ge forming laterally and vertically uncorrelated islands with a height of 2 nm and a lateral diameter of about 20 nm. An average biaxial strain of -3.5% within the core regions of islands is determined from the splitting of longitudinal and transversal optical Ge-Ge phonon modes observed in polarized Raman measurements. The absolute mode frequencies further enable analysis of a Ge content of 0.82. The analyzed strain and composition of islands are nearly independent from depths below the sample surface. This indicates well-controlled deposition parameters and negligible intermixing during deposition of subsequent layers. These Raman results are in agreement with x-ray diffraction data. Small, local Raman frequency shifts were observed and discussed with respect to partial elastic strain relaxation of the multilayer stack after cleavage, undefined Raman-scattering geometries at the sample edge, and local heating by the laser probe

  13. Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

    Science.gov (United States)

    Huang, Zhong-Mei; Huang, Wei-Qi; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke

    2016-12-01

    It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.

  14. Heteroepitaxial Growth of Vacuum-Evaporated Si-Ge Films on Nano structured Silicon Substrates

    International Nuclear Information System (INIS)

    Ayu Wazira Azhari; Ayu Wazira Azhari; Kamaruzzaman Sopian; Saleem Hussain Zaidi

    2015-01-01

    In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: for example polished Si, Si micro pyramids and Si nano pillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nano pillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000 degree Celsius to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications. (author)

  15. Transformation of point defects under annealing of neutron-irradiated Si and Si:Ge

    International Nuclear Information System (INIS)

    Pomozov, Yu.V.; Khirunenko, L.I.; Shakhovtsev, V.I.; Yashnik, V.I.

    1990-01-01

    Transformation of point radiation defects under isochronous annealing of neurton-irradaited Si and Si:Ge is studied. It is determined, that occurence of several new centers which produce A-centre range absorption bands is observed at annealing within 423-493 K temperature range. It is shown that vacancy and oxygen are included in the centers composition. It is found that VO centre transformation into VO 2 at annealing occurs via intermediate stage in contrast to that occuring in electron-irradiated crystals via VO direct diffusion to interstitial oxygen. Transformation of centers under Si ansd Si:Ge annealing occurs similarly

  16. Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

    Science.gov (United States)

    De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

    1996-08-01

    This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

  17. Buffer design 2012

    International Nuclear Information System (INIS)

    Juvankoski, M.

    2013-08-01

    Posiva's spent nuclear fuel disposal is based on the KBS-3V concept and on the characteristics of the Olkiluoto site. In this concept single canisters containing spent nuclear fuel surrounded by a bentonite buffer are emplaced in individual vertical boreholes drilled in the floor of deposition tunnels in bedrock at about 420 m depth below ground level. Disk type bentonite blocks are installed at the bottom of the hole and on the top of the disposal canister. Ring type bentonite blocks surround the canisters. This report describes the detailed design of the buffer for a KBS-3V repository. The report presents the design basis, the reference design, and summarises the performance analyses carried out for the design. This report addresses aspects concerning the manufacture, quality control, mechanical strength, chemical resistance, thermal dimensioning, handling of buffer components and material ageing phenomena including the effect of radiation. Interaction of buffer and other engineered barriers are included in the study. The long-term evolution of the repository and its effective drivers are considered if they have an impact on the buffer performance but operational safety aspects are also included because they may affect long-term safety. (orig.)

  18. From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructures

    International Nuclear Information System (INIS)

    Isa, Fabio; Salvalaglio, Marco; Dasilva, Yadira Arroyo Rojas; Jung, Arik; Isella, Giovanni; Erni, Rolf; Niedermann, Philippe; Gröning, Pierangelo; Montalenti, Francesco; Känel, Hans von

    2016-01-01

    We present a detailed experimental and theoretical analysis of the epitaxial stress relaxation process in micro-structured compositionally graded alloys. We focus on the pivotal SiGe/Si(001) system employing patterned Si substrates at the micrometre-size scale to address the distribution of threading and misfit dislocations within the heterostructures. SiGe alloys with linearly increasing Ge content were deposited by low energy plasma enhanced chemical vapour deposition resulting in isolated, tens of micrometre tall 3D crystals. We demonstrate that complete elastic relaxation is achieved by appropriate choice of the Ge compositional grading rate and Si pillar width. We investigate the nature and distribution of dislocations along the [001] growth direction in SiGe crystals by transmission electron microscopy, chemical defect etching and etch pit counting. We show that for 3 μm wide Si pillars and a Ge grading rate of 1.5% μm −1 , only misfit dislocations are present while their fraction is reduced for higher Ge grading rates and larger structures due to dislocation interactions. The experimental results are interpreted with the help of theoretical calculations based on linear elasticity theory describing the competition between purely elastic and plastic stress relaxation with increasing crystal width and Ge compositional grading rate.

  19. The SVT Hit Buffer

    International Nuclear Information System (INIS)

    Belforte, S.; Dell'Orso, M.; Donati, S.

    1996-01-01

    The Hit Buffer is part of the Silicon Vertex Tracker, a trigger processor dedicated to the reconstruction of particle trajectories in the Silicon Vertex Detector and the Central Tracking Chamber of the Collider Detector at Fermilab. The Hit Buffer is a high speed data-traffic node, where thousands of words are received in arbitrary order and simultaneously organized in an internal structured data base, to be later promptly retrieved and delivered in response to specific requests. The Hit Buffer is capable of processing data at a rate of 25 MHz, thanks to the use of special fast devices like Cache-Tag RAMs and high performance Erasable Programmable Logic Devices from the XILINX XC7300 family

  20. Breathing and Relaxation

    Science.gov (United States)

    ... Find a Doctor Relaxation is the absence of tension in muscle groups and a minimum or absence ... Drill Meditation Progressive Muscle Relaxation Minimizing Shortness of Breath Visualization This information has been approved by Shelby ...

  1. Total dose hardness of a commercial SiGe BiCMOS technology

    International Nuclear Information System (INIS)

    Van Vonno, N.; Lucas, R.; Thornberry, D.

    1999-01-01

    Over the past decade SiGe HBT technology has progress from the laboratory to actual commercial applications. When integrated into a BiMOS process, this technology has applications in low-cost space systems. In this paper, we report results of total dose testing of a SiGe/CMOS process accessible through a commercial foundry. (authors)

  2. An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

    2017-01-01

    In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can...

  3. De-embedding and Modelling of pnp SiGe HBTs

    DEFF Research Database (Denmark)

    Hadziabdic, Dzenan; Jiang, Chenhui; Johansen, Tom Keinicke

    2007-01-01

    In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to accoun...

  4. A Passive X-Band Double Balanced Mixer Utilizing Diode Connected SiGe HBTs

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld

    2013-01-01

    In this paper, a passive double balanced mixer in SiGe HBT technology is presented. Due to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode connected HBTs. The mixer is optimized for use in doppler radars and is highly linear with 1 dB compressio...

  5. SiGe Based Low Temperature Electronics for Lunar Surface Applications

    Science.gov (United States)

    Mojarradi, Mohammad M.; Kolawa, Elizabeth; Blalock, Benjamin; Cressler, John

    2012-01-01

    The temperature at the permanently shadowed regions of the moon's surface is approximately -240 C. Other areas of the lunar surface experience temperatures that vary between 120 C and -180 C during the day and night respectively. To protect against the large temperature variations of the moon surface, traditional electronics used in lunar robotics systems are placed inside a thermally controlled housing which is bulky, consumes power and adds complexity to the integration and test. SiGe Based electronics have the capability to operate over wide temperature range like that of the lunar surface. Deploying low temperature SiGe electronics in a lander platform can minimize the need for the central thermal protection system and enable the development of a new generation of landers and mobility platforms with highly efficient distributed architecture. For the past five years a team consisting of NASA, university and industry researchers has been examining the low temperature and wide temperature characteristic of SiGe based transistors for developing electronics for wide temperature needs of NASA environments such as the Moon, Titan, Mars and Europa. This presentation reports on the status of the development of wide temperature SiGe based electronics for the landers and lunar surface mobility systems.

  6. A parallel buffer tree

    DEFF Research Database (Denmark)

    Sitchinava, Nodar; Zeh, Norbert

    2012-01-01

    We present the parallel buffer tree, a parallel external memory (PEM) data structure for batched search problems. This data structure is a non-trivial extension of Arge's sequential buffer tree to a private-cache multiprocessor environment and reduces the number of I/O operations by the number of...... in the optimal OhOf(psortN + K/PB) parallel I/O complexity, where K is the size of the output reported in the process and psortN is the parallel I/O complexity of sorting N elements using P processors....

  7. SiGe Integrated Circuit Developments for SQUID/TES Readout

    Science.gov (United States)

    Prêle, D.; Voisin, F.; Beillimaz, C.; Chen, S.; Piat, M.; Goldwurm, A.; Laurent, P.

    2018-03-01

    SiGe integrated circuits dedicated to the readout of superconducting bolometer arrays for astrophysics have been developed since more than 10 years at APC. Whether for Cosmic Microwave Background (CMB) observations with the QUBIC ground-based experiment (Aumont et al. in astro-ph.IM, 2016. arXiv:1609.04372) or for the Hot and Energetic Universe science theme with the X-IFU instrument on-board of the ATHENA space mission (Barret et al. in SPIE 9905, space telescopes & instrumentation 2016: UV to γ Ray, 2016. https://doi.org/10.1117/12.2232432), several kinds of Transition Edge Sensor (TES) (Irwin and Hilton, in ENSS (ed) Cryogenic particle detection, Springer, Berlin, 2005) arrays have been investigated. To readout such superconducting detector arrays, we use time or frequency domain multiplexers (TDM, FDM) (Prêle in JINST 10:C08015, 2016. https://doi.org/10.1088/1748-0221/10/08/C08015) with Superconducting QUantum Interference Devices (SQUID). In addition to the SQUID devices, low-noise biasing and amplification are needed. These last functions can be obtained by using BiCMOS SiGe technology in an Application Specific Integrated Circuit (ASIC). ASIC technology allows integration of highly optimised circuits specifically designed for a unique application. Moreover, we could reach very low-noise and wide band amplification using SiGe bipolar transistor either at room or cryogenic temperatures (Cressler in J Phys IV 04(C6):C6-101, 1994. https://doi.org/10.1051/jp4:1994616). This paper discusses the use of SiGe integrated circuits for SQUID/TES readout and gives an update of the last developments dedicated to the QUBIC telescope and to the X-IFU instrument. Both ASIC called SQmux128 and AwaXe are described showing the interest of such SiGe technology for SQUID multiplexer controls.

  8. Electronic structure of O-doped SiGe calculated by DFT + U method

    Science.gov (United States)

    Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

    2016-12-01

    To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).

  9. Buffer Zone Sign Template

    Science.gov (United States)

    The certified pesticide applicator is required to post a comparable sign, designating a buffer zone around the soil fumigant application block in order to control exposure risk. It must include the don't walk symbol, product name, and applicator contact.

  10. Buffer Zone, Nicosia

    OpenAIRE

    Sorensen, Marie Louise

    2010-01-01

    Images of the United Nations Buffer Zone or Green Line which has partitioned Cyprus since 1974 The research leading to these results has received funding from the European Community's Seventh Framework Programme [FP7/2007-2013] under grant agreement n° 217411.

  11. Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM

    Energy Technology Data Exchange (ETDEWEB)

    Paul, N.

    2007-10-26

    In the thesis work presented here, we show that Bi is more promising surfactant material than Sb. We demonstrate that by using Bi as a terminating layer on Ge/Si surface, it is possible to distinguish between Si and Ge in Scanning tunnelling microscope (STM). Any attempt to utilize surfactant mediated growth must be preceded by a thorough study of its effect on the the system being investigated. Thus, the third chapter of this thesis deals with an extensive study of the Bi surfactant mediated growth of Ge on Si(111) surface as a function of Ge coverage. The growth is investigated from the single bilayer Ge coverage till the Ge coverage of about 15 BL when the further Ge deposition leads to two-dimensional growth. In the fourth chapter, the unique property of Bi terminating layer on Ge/Si surface to result in an STM height contrast between Si and Ge is explained with possible explanations given for the reason of this apparent height contrast. The controlled fabrication of Ge/Si nanostructures such as nanowires and nanorings is demonstrated. A study on Ge-Si diffusion in the surface layers by a direct method such as STM was impossible previously because of the similar electronic structure of Ge and Si. Since with the Bi terminating surface layer, one is able to distinguish between Ge and Si, the study of intermixing between them is also possible using STM. This method to distinguish between Si and Ge allows one to study intermixing on the nanoscale and to identify the fundamental diffusion processes giving rise to the intermixing. In Chapter 5 we discuss how this could prove useful especially as one could get a local probe over a very narrow Ge-Si interface. A new model is proposed to estimate change in the Ge concentration in the surface layer with time. The values of the activation energies of Ge/Si exchange and Si/Ge exchange are estimated by fitting the experimental data with the model. The Ge/Si intermixing has been studied on a surface having 1 ML Bi ({radical

  12. SigE Is a Chaperone for the Salmonella enterica Serovar Typhimurium Invasion Protein SigD

    OpenAIRE

    Darwin, K. Heran; Robinson, Lloyd S.; Miller, Virginia L.

    2001-01-01

    SigD is translocated into eucaryotic cells by a type III secretion system. In this work, evidence that the putative chaperone SigE directly interacts with SigD is presented. A bacterial two-hybrid system demonstrated that SigE can interact with itself and SigD. In addition, SigD was specifically copurified with SigE-His6 on a nickel column.

  13. Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

    OpenAIRE

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2016-01-01

    The structural, dynamic, and vibrational properties during the heat transfer process in Si/Ge superlattices, are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) ar...

  14. Creep in buffer clay

    International Nuclear Information System (INIS)

    Pusch, R.; Adey, R.

    1999-12-01

    The study involved characterization of the microstructural arrangement and molecular forcefields in the buffer clay for getting a basis for selecting suitable creep models. It is concluded that the number of particles and wide range of the particle bond spectrum require that stochastical mechanics and thermodynamics will be considered and they are basic to the creep model proposed for predicting creep settlement of the canisters. The influence of the stress level on creep strain of MX-80 clay is not well known but for the buffer creep is approximately proportional to stress. Theoretical considerations suggest a moderate impact for temperatures up to 90 deg C and this is supported by model experiments. It is believed that the assumption of strain being proportional to temperature is conservative. The general performance of the stochastic model can be illustrated in principle by use of visco-elastic rheological models implying a time-related increase in viscosity. The shear-induced creep settlement under constant volume conditions calculated by using the proposed creep model is on the order of 1 mm in ten thousand years and up to a couple of millimeters in one million years. It is much smaller than the consolidation settlement, which is believed to be on the order of 10 mm. The general conclusion is that creep settlement of the canisters is very small and of no significance to the integrity of the buffer itself or of the canisters

  15. Mechanical relaxation in glasses

    International Nuclear Information System (INIS)

    Hiki, Y.

    2004-01-01

    The basic properties of glasses and the characteristics of mechanical relaxation in glasses were briefly reviewed, and then our studies concerned were presented. Experimental methods adopted were viscosity, internal friction, ultrasonic attenuation, and Brillouin scattering measurements. The specimens used were several kinds of inorganic, organic, and metallic glasses. The measurements were mainly carried out from the room temperature up to the glass transition temperature, and the relaxation time was determined as a function of temperature. The 'double relaxation' composed of two Arrhenius-type relaxations was observed in many materials. In both relaxations, the 'compensation effect' showing a correlation of the pre-exponential factor and the activation energy was observed. These results were explained by considering the 'complex relaxation' due to cooperative motions of atoms or group of atoms. Values of activation energy near the glass transition determined by the various experimental methods were compared with each other

  16. Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

    International Nuclear Information System (INIS)

    Cheng Xinli; Chen Zhijun; Wang Yongjin; Jin Bo; Zhang Feng; Zou Shichang

    2005-01-01

    SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI

  17. Critical Role of a Single Position in the −35 Element for Promoter Recognition by Mycobacterium tuberculosis SigE and SigH▿

    OpenAIRE

    Song, Taeksun; Song, Seung-Eun; Raman, Sahadevan; Anaya, Mauricio; Husson, Robert N.

    2008-01-01

    Mycobacterial SigE and SigH both initiate transcription from the sigB promoter, suggesting that they recognize similar sequences. Through mutational and primer extension analyses, we determined that SigE and SigH recognize nearly identical promoters, with differences at the 3′ end of the −35 element distinguishing between SigE- and SigH-dependent promoters.

  18. Significant reduction of thermal conductivity in Si/Ge core-shell nanowires.

    Science.gov (United States)

    Hu, Ming; Giapis, Konstantinos P; Goicochea, Javier V; Zhang, Xiaoliang; Poulikakos, Dimos

    2011-02-09

    We report on the effect of germanium (Ge) coatings on the thermal transport properties of silicon (Si) nanowires using nonequilibrium molecular dynamics simulations. Our results show that a simple deposition of a Ge shell of only 1 to 2 unit cells in thickness on a single crystalline Si nanowire can lead to a dramatic 75% decrease in thermal conductivity at room temperature compared to an uncoated Si nanowire. By analyzing the vibrational density states of phonons and the participation ratio of each specific mode, we demonstrate that the reduction in the thermal conductivity of Si/Ge core-shell nanowire stems from the depression and localization of long-wavelength phonon modes at the Si/Ge interface and of high frequency nonpropagating diffusive modes.

  19. Strain-induced formation of fourfold symmetric SiGe quantum dot molecules.

    Science.gov (United States)

    Zinovyev, V A; Dvurechenskii, A V; Kuchinskaya, P A; Armbrister, V A

    2013-12-27

    The strain field distribution at the surface of a multilayer structure with disklike SiGe nanomounds formed by heteroepitaxy is exploited to arrange the symmetric quantum dot molecules typically consisting of four elongated quantum dots ordered along the [010] and [100] directions. The morphological transition from fourfold quantum dot molecules to continuous fortresslike quantum rings with an increasing amount of deposited Ge is revealed. We examine key mechanisms underlying the formation of lateral quantum dot molecules by using scanning tunneling microscopy and numerical calculations of the strain energy distribution on the top of disklike SiGe nanomounds. Experimental data are well described by a simple thermodynamic model based on the accurate evaluation of the strain dependent part of the surface chemical potential. The spatial arrangement of quantum dots inside molecules is attributed to the effect of elastic property anisotropy.

  20. Nitride passivation of the interface between high-k dielectrics and SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

    2016-01-04

    In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

  1. Effect of Synthesis Procedure on Thermoelectric Property of SiGe Alloy

    Science.gov (United States)

    Li, Jing; Han, Jun; Jiang, Tao; Luo, Lili; Xiang, Yongchun

    2018-05-01

    SiGe thermoelectric material has been synthesized by ball milling combined with hot pressing (HP) or spark plasma sintering (SPS). Effects of ball milling time, powder to ball weight ratio and sintering method on microstructure and thermoelectric properties of SiGe are studied. The results show that longer ball milling time leads to decreased density and worse electrical properties. In the sintering process, SPS results in much larger density and better electrical properties than HP. The Si0.795Ge0.2B0.005 sample prepared by 2 h ball milling combined with SPS obtains a maximum power factor of 3.0 mW m-1 K-2 at 860 K and ZT of 0.95 at 1000 K.

  2. Diffusion of $^{56}$Co in GaAs and SiGe alloys

    CERN Multimedia

    Koskelo, O K

    2007-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of cobalt in GaAs and SiGe alloys under intrinsic conditions. In the literature only three previous studies for Co diffusion in GaAs may be found and the results differ by over four orders of magnitude from each other. For Co diffusion in SiGe alloys no previous data is available in the literature. For Co diffusion in Ge one study may be found but the results have been obtained with material having increased dislocation density. For dislocation-free material no previous measurements are available. For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{56}$Co$^{+}$ ion beam.

  3. Relaxation characteristics of hastelloy X

    International Nuclear Information System (INIS)

    Suzuki, Kazuhiko

    1980-02-01

    Relaxation diagrams of Hastelloy X (relaxation curves, relaxation design diagrams, etc.) were generated from the creep constitutive equation of Hastelloy X, using inelastic stress analysis code TEPICC-J. These data are in good agreement with experimental relaxation data of ORNL-5479. Three typical inelastic stress analyses were performed for various relaxation behaviors of the high-temperature structures. An attempt was also made to predict these relaxation behaviors by the relaxation curves. (author)

  4. Integrated X-band FMCW front-end in SiGe BiCMOS

    NARCIS (Netherlands)

    Suijker, Erwin; de Boer, Lex; Visser, Guido; van Dijk, Raymond; Poschmann, Michael; van Vliet, Frank Edward

    2010-01-01

    An integrated X-band FMCW front-end is reported. The front-end unites the core functionality of an FMCW transmitter and receiver in a 0.25 μm SiGe BiCMOS process. The chip integrates a PLL for the carrier generation, and single-side band and image-reject mixers for up- and down-conversion of the

  5. Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Ferlet-Cavrois, Veronique; Baggio, Jacques; Duhamel, Olivier; Moen, Kurt A.; Phillips, Stanley D.; Diestelhorst, Ryan M.; hide

    2009-01-01

    SiGe HBT heavy ion-induced current transients are measured using Sandia National Laboratories microbeam and high- and low-energy broadbeam sources at the Grand Accelerateur National d'Ions Lourds and the University of Jyvaskyla. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.

  6. Step-driven surface segregation and ordering during Si-Ge MBE growth

    International Nuclear Information System (INIS)

    Jesson, D.E.; Pennycook, S.J.; Baribeau, J.M.; Houghton, D.C.

    1992-06-01

    An important role of type S B step edges in determining the as-grown microstructure of Si-Ge superlattices and alloys is implicated from direct Z-contrast images of as-grown structures. A variety of different ordered phase variants can arise at each Si on Ge interface as a result of vertical segregation during superlattice growth. A new monoclinic-ordered structure is predicted to arise as a result of lateral segregation during alloy growth

  7. Buffered or under Scrutiny?

    DEFF Research Database (Denmark)

    Klopf, Patricia; Nell, Phillip C.; Puck, Jonas

    – they are to a stronger extent buffered from the external environment than small firms. Thus, this paper adds to previous research by disentangling the complex effects of size on the use of political strategies – a strand of literature which has been characterized by inconsistent findings in the past.......This paper investigates political strategies of MNE subsidiaries operating in emerging markets. Our findings support previous findings of more intense political strategies in the presence of stronger institutional pressures from public and private stakeholders. Furthermore, we hypothesize...

  8. SiGe derivatization by spontaneous reduction of aryl diazonium salts

    Science.gov (United States)

    Girard, A.; Geneste, F.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.

    2013-10-01

    Germanium semiconductors have interesting properties for FET-based biosensor applications since they possess high surface roughness allowing the immobilization of a high amount of receptors on a small surface area. Since SiGe combined low cost of Si and intrinsic properties of Ge with high mobility carriers, we focused the study on this particularly interesting material. The comparison of the efficiency of a functionalization process involving the spontaneous reduction of diazonium salts is studied on Si(1 0 0), SiGe and Ge semiconductors. XPS analysis of the functionalized surfaces reveals the presence of a covalent grafted layer on all the substrates that was confirmed by AFM. Interestingly, the modified Ge derivatives have still higher surface roughness after derivatization. To support the estimated thickness by XPS, a step measurement of the organic layers is done by AFM or by profilometer technique after a O2 plasma etching of the functionalized layer. This original method is well-adapted to measure the thickness of thin organic films on rough substrates such as germanium. The analyses show a higher chemical grafting on SiGe substrates compared with Si and Ge semiconductors.

  9. 270GHz SiGe BiCMOS manufacturing process platform for mmWave applications

    Science.gov (United States)

    Kar-Roy, Arjun; Preisler, Edward J.; Talor, George; Yan, Zhixin; Booth, Roger; Zheng, Jie; Chaudhry, Samir; Howard, David; Racanelli, Marco

    2011-11-01

    TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors. Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband imaging are presented.

  10. SiGe BiCMOS manufacturing platform for mmWave applications

    Science.gov (United States)

    Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

    2010-10-01

    TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

  11. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Science.gov (United States)

    Shklyaev, A. A.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2018-01-01

    High temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at ˜400 °C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si substrate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band.

  12. Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

    International Nuclear Information System (INIS)

    Ghosh, Swapnadip; Kaiser, Daniel; Sinno, Talid; Bonilla, Jose; Han, Sang M.

    2015-01-01

    While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si 0.8 Ge 0.2 wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si 0.8 Ge 0.2 bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures

  13. Interfacial Phonon Transport Through Si/Ge Multilayer Film Using Monte Carlo Scheme With Spectral Transmissivity

    Directory of Open Access Journals (Sweden)

    Xin Ran

    2018-05-01

    Full Text Available The knowledge of interfacial phonon transport accounting for detailed phonon spectral properties is desired because of its importance for design of nanoscale energy systems. In this work, we investigate the interfacial phonon transport through Si/Ge multilayer films using an efficient Monte Carlo scheme with spectral transmissivity, which is validated for cross-plane phonon transport through both Si/Ge single-layer and Si/Ge bi-layer thin films by comparing with the discrete-ordinates solution. Different thermal boundary conductances between even the same material pair are declared at different interfaces within the multilayer system. Furthermore, the thermal boundary conductances at different interfaces show different trends with varying total system size, with the variation slope, very different as well. The results are much different from those in the bi-layer thin film or periodic superlattice. These unusual behaviors can be attributed to the combined interfacial local non-equilibrium effect and constraint effect from other interfaces.

  14. Ion beam analysis of the dry thermal oxidation of thin polycrystalline SiGe films

    International Nuclear Information System (INIS)

    Kling, A.; Soares, J.C.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Nanoparticles of Ge embedded in a formed dielectric matrix appear as very promising systems for electronic and photonic applications. We present here an exhaustive characterization of the oxidation process of polycrystalline SiGe layers from the starting of its oxidation process to the total oxidation of it. We have characterized the process by RBS, FTIR and Raman spectroscopy, showing the necessity to use different techniques in order to get a full view of the process. First the Si-Si and Si-Ge bonds are oxidized growing SiO 2 , and Ge segregates from the SiO 2 . As soon as all Si is oxidized GeO 2 is growing gradually. RBS has demonstrated to be very useful to characterize the SiO 2 and the remaining non-oxidized poly-SiGe layer thickness, as well as for the determination of the Ge fraction, where the high sensitivity of this technique allows to explore its whole range. On the other hand, for the reliable determination of the GeO 2 thickness, information on the amount of Ge-O bonding had to be obtained from FTIR spectra. Raman spectroscopy yields detailed information about the oxidation processes for different bonds (Si-Si, Si-Ge, Ge-Ge)

  15. TEACHING NEUROMUSCULAR RELAXATION.

    Science.gov (United States)

    NORRIS, JEANNE E.; STEINHAUS, ARTHUR H.

    THIS STUDY ATTEMPTED TO FIND OUT WHETHER (1) THE METHODS FOR ATTAINING NEUROMUSCULAR RELAXATION THAT HAVE PROVED FRUITFUL IN THE ONE-TO-ONE RELATIONSHIP OF THE CLINIC CAN BE SUCCESSFULLY ADAPTED TO THE TEACHER-CLASS RELATIONSHIP OF THE CLASSROOM AND GYMNASIUM, AND (2) NEUROMUSCULAR RELAXATION CAN BE TAUGHT SUCCESSFULLY BY AN APPROPRIATELY TRAINED…

  16. Relaxation of Anisotropic Glasses

    DEFF Research Database (Denmark)

    Deubener, Joachim; Martin, Birgit; Wondraczek, Lothar

    2004-01-01

    . When the load was removed at room temperature a permanent optical anisotropy (birefringence) was observed only perpendicular to cylinder axis and the pressure direction indicating complete elimination of thermal stresses. Relaxation of structural anisotropy was studied from reheating experiments using...... the energy release, thermo-mechanical and optical relaxation behaviour are drawn....

  17. Relaxation techniques for stress

    Science.gov (United States)

    ... raise your heart rate. This is called the stress response. Relaxation techniques can help your body relax and lower your blood pressure ... also many other types of breathing techniques you can learn. In many cases, you do not need much ... including those that cause stress. Meditation has been practiced for thousands of years, ...

  18. Investigating the episodic buffer

    Directory of Open Access Journals (Sweden)

    Alan Baddeley

    2010-10-01

    Full Text Available A brief account is presented of the three-component working memory model proposed by Baddeley and Hitch. This is followed by an account of some of the problems it encountered in explaining how information from different subsystems with different codes could be combined, and how it was capable of communicating with long-term memory. In order to account for these, a fourth component was proposed, the episodic buffer. This was assumed to be a multidimensional store of limited capacity that can be accessed through conscious awareness. In an attempt to test and develop the concept, a series of experiments have explored the role of working memory in the binding of visual features into objects and verbal sequences into remembered sentences. The experiments use a dual task paradigm to investigate the role of the various subcomponents of working memory in binding. In contrast to our initial assumption, the episodic buffer appears to be a passive store, capable of storing bound features and making them available to conscious awareness, but not itself responsible for the process of binding.

  19. Relaxation of mechanical stresses in Si-Ge/Si structures implanted by carbon ions. Study with optical methods

    International Nuclear Information System (INIS)

    Klyuj, M.Yi.

    1998-01-01

    Optical properties of Si-Ge/Si structures implanted by carbon ions with the energy of 20 keV and at the doses of 5 centre dot 10 15 - 1- 16 cm -2 are studied by spectro ellipsometry and Raman scattering techniques. From the comparison of experimental data with the results of theoretical calculations, it is shown that, as a result of implantation, a partial relaxation of mechanical stresses in the Si 1-x Ge x film due to introduction of carbon atoms with a small covalent radius into the Si-Ge lattice takes place. An elevated implantation temperature allows one to maintain a high structural perfection of the implanted film

  20. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Science.gov (United States)

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  1. sigE facilitates the adaptation of Bordetella bronchiseptica to stress conditions and lethal infection in immunocompromised mice

    Directory of Open Access Journals (Sweden)

    Barchinger Sarah E

    2012-08-01

    Full Text Available Abstract Background The cell envelope of a bacterial pathogen can be damaged by harsh conditions in the environment outside a host and by immune factors during infection. Cell envelope stress responses preserve the integrity of this essential compartment and are often required for virulence. Bordetella species are important respiratory pathogens that possess a large number of putative transcription factors. However, no cell envelope stress responses have been described in these species. Among the putative Bordetella transcription factors are a number of genes belonging to the extracytoplasmic function (ECF group of alternative sigma factors, some of which are known to mediate cell envelope stress responses in other bacteria. Here we investigate the role of one such gene, sigE, in stress survival and pathogenesis of Bordetella bronchiseptica. Results We demonstrate that sigE encodes a functional sigma factor that mediates a cell envelope stress response. Mutants of B. bronchiseptica strain RB50 lacking sigE are more sensitive to high temperature, ethanol, and perturbation of the envelope by SDS-EDTA and certain β-lactam antibiotics. Using a series of immunocompromised mice deficient in different components of the innate and adaptive immune responses, we show that SigE plays an important role in evading the innate immune response during lethal infections of mice lacking B cells and T cells. SigE is not required, however, for colonization of the respiratory tract of immunocompetent mice. The sigE mutant is more efficiently phagocytosed and killed by peripheral blood polymorphonuclear leukocytes (PMNs than RB50, and exhibits decreased cytotoxicity toward macrophages. These altered interactions with phagocytes could contribute to the defects observed during lethal infection. Conclusions Much of the work on transcriptional regulation during infection in B. bronchiseptica has focused on the BvgAS two-component system. This study reveals that the SigE

  2. The relaxation time approximation

    International Nuclear Information System (INIS)

    Gairola, R.P.; Indu, B.D.

    1991-01-01

    A plausible approximation has been made to estimate the relaxation time from a knowledge of the transition probability of phonons from one state (r vector, q vector) to other state (r' vector, q' vector), as a result of collision. The relaxation time, thus obtained, shows a strong dependence on temperature and weak dependence on the wave vector. In view of this dependence, relaxation time has been expressed in terms of a temperature Taylor's series in the first Brillouin zone. Consequently, a simple model for estimating the thermal conductivity is suggested. the calculations become much easier than the Callaway model. (author). 14 refs

  3. Buffer moisture protection system

    International Nuclear Information System (INIS)

    Ritola, J.; Peura, J.

    2013-11-01

    With the present knowledge, bentonite blocks have to be protected from the air relative humidity and from any moisture leakages in the environment that might cause swelling of the bentonite blocks during the 'open' installation phase before backfilling. The purpose of this work was to design the structural reference solution both for the bottom of the deposition hole and for the buffer moisture protection and dewatering system with their integrated equipment needed in the deposition hole. This report describes the Posiva's reference solution for the buffer moisture protection system and the bottom plate on basis of the demands and functional requirements set by long-term safety. The reference solution with structural details has been developed in research work made 2010-2011. The structural solution of the moisture protection system has not yet been tested in practice. On the bottom of the deposition hole a copper plate which protects the lowest bentonite block from the gathered water is installed straight to machined and even rock surface. The moisture protection sheet made of EPDM rubber is attached to the copper plate with an inflatable seal. The upper part of the moisture protection sheet is fixed to the collar structures of the lid which protects the deposition hole in the disposal tunnel. The main function of the moisture protection sheet is to protect bentonite blocks from the leaking water and from the influence of the air humidity at their installation stage. The leaking water is controlled by the dewatering and alarm system which has been integrated into the moisture protection liner. (orig.)

  4. Buffer capacity of biologics--from buffer salts to buffering by antibodies.

    Science.gov (United States)

    Karow, Anne R; Bahrenburg, Sven; Garidel, Patrick

    2013-01-01

    Controlling pH is essential for a variety of biopharmaceutical process steps. The chemical stability of biologics such as monoclonal antibodies is pH-dependent and slightly acidic conditions are favorable for stability in a number of cases. Since control of pH is widely provided by added buffer salts, the current study summarizes the buffer characteristics of acetate, citrate, histidine, succinate, and phosphate buffers. Experimentally derived values largely coincide with values calculated from a model that had been proposed in 1922 by van Slyke. As high concentrated protein formulations become more and more prevalent for biologics, the self-buffering potential of proteins becomes of relevance. The current study provides information on buffer characteristics for pH ranges down to 4.0 and up to 8.0 and shows that a monoclonal antibody at 50 mg/mL exhibits similar buffer capacity as 6 mM citrate or 14 mM histidine (pH 5.0-6.0). Buffer capacity of antibody solutions scales linearly with protein concentration up to more than 200 mg/mL. At a protein concentration of 220 mg/mL, the buffer capacity resembles the buffer capacity of 30 mM citrate or 50 mM histidine (pH 5.0-6.0). The buffer capacity of monoclonal antibodies is practically identical at the process relevant temperatures 5, 25, and 40°C. Changes in ionic strength of ΔI=0.15, in contrast, can alter the buffer capacity up to 35%. In conclusion, due to efficient self-buffering by antibodies in the pH range of favored chemical stability, conventional buffer excipients could be dispensable for pH stabilization of high concentrated protein solutions. Copyright © 2013 American Institute of Chemical Engineers.

  5. Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.

    Science.gov (United States)

    Dhungana, Kamal B; Jaishi, Meghnath; Pati, Ranjit

    2016-07-13

    The sustained advancement in semiconducting core-shell nanowire technology has unlocked a tantalizing route for making next generation field effect transistor (FET). Understanding how to control carrier mobility of these nanowire channels by applying a gate field is the key to developing a high performance FET. Herein, we have identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart. A quantum transport approach is used to investigate the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si-Ge core-shell nanowire quantum dot FETs. Our calculations reveal that for the ON state, the gate-field induced transverse localization of the wave function restricts the carrier transport to the outer (shell) layer with the pz orbitals providing the pathway for tunneling of electrons in the channels. The higher ON state current in the Si-Ge core-shell nanowire FET is attributed to the pz orbitals that are distributed over the entire channel; in the case of Si nanowire, the participating pz orbital is restricted to a few Si atoms in the channel resulting in a smaller tunneling current. Within the gate bias range considered here, the transconductance is found to be substantially higher in the case of a Si-Ge core-shell nanowire FET than in a Si nanowire FET, which suggests a much higher mobility in the Si-Ge nanowire device.

  6. Two-Buffer Simulation Games

    Directory of Open Access Journals (Sweden)

    Milka Hutagalung

    2016-07-01

    Full Text Available We consider simulation games played between Spoiler and Duplicator on two Büchi automata in which the choices made by Spoiler can be buffered by Duplicator in two different buffers before she executes them on her structure. Previous work on such games using a single buffer has shown that they are useful to approximate language inclusion problems. We study the decidability and complexity and show that games with two buffers can be used to approximate corresponding problems on finite transducers, i.e. the inclusion problem for rational relations over infinite words.

  7. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

    DEFF Research Database (Denmark)

    Lu, Weifang; Li, Cheng; Lin, Guangyang

    2015-01-01

    Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

  8. Using fractional order method to generalize strengthening generating operator buffer operator and weakening buffer operator

    OpenAIRE

    Wu, L.; Liu, S.; Yang, Yingjie

    2016-01-01

    Traditional integer order buffer operator is extended to fractional order buffer operator, the corresponding relationship between the weakening buffer operator and the strengthening buffer operator is revealed. Fractional order buffer operator not only can generalize the weakening buffer operator and the strengthening buffer operator, but also realize tiny adjustment of buffer effect. The effectiveness of GM(1,1) with the fractional order buffer operator is validated by six cases.

  9. Mechanisms of buffer therapy resistance.

    Science.gov (United States)

    Bailey, Kate M; Wojtkowiak, Jonathan W; Cornnell, Heather H; Ribeiro, Maria C; Balagurunathan, Yoganand; Hashim, Arig Ibrahim; Gillies, Robert J

    2014-04-01

    Many studies have shown that the acidity of solid tumors contributes to local invasion and metastasis. Oral pH buffers can specifically neutralize the acidic pH of tumors and reduce the incidence of local invasion and metastatic formation in multiple murine models. However, this effect is not universal as we have previously observed that metastasis is not inhibited by buffers in some tumor models, regardless of buffer used. B16-F10 (murine melanoma), LL/2 (murine lung) and HCT116 (human colon) tumors are resistant to treatment with lysine buffer therapy, whereas metastasis is potently inhibited by lysine buffers in MDA-MB-231 (human breast) and PC3M (human prostate) tumors. In the current work, we confirmed that sensitive cells utilized a pH-dependent mechanism for successful metastasis supported by a highly glycolytic phenotype that acidifies the local tumor microenvironment resulting in morphological changes. In contrast, buffer-resistant cell lines exhibited a pH-independent metastatic mechanism involving constitutive secretion of matrix degrading proteases without elevated glycolysis. These results have identified two distinct mechanisms of experimental metastasis, one of which is pH-dependent (buffer therapy sensitive cells) and one which is pH-independent (buffer therapy resistant cells). Further characterization of these models has potential for therapeutic benefit. Copyright © 2014 Neoplasia Press, Inc. Published by Elsevier Inc. All rights reserved.

  10. Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

    Science.gov (United States)

    Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

    2016-02-01

    Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal

  11. Low thermal budget surface preparation of Si and SiGe

    International Nuclear Information System (INIS)

    Abbadie, A.; Hartmann, J.M.; Holliger, P.; Semeria, M.N.; Besson, P.; Gentile, P.

    2004-01-01

    Using a two-step cleaning, we have investigated the low thermal budget surface preparation of Si and Si 1-x Ge x (x=0.2-0.33). It consists of an ex situ 'HF-last' wet-cleaning and an in situ low thermal budget H 2 bake in a reduced pressure-chemical vapor deposition reactor. Using secondary ion mass spectrometry, we have evaluated the effects of different H 2 bake temperatures (in between 750 and 850 deg. C for 2 min) on the removal efficiency of C, O and F atoms still present on the surface of Si and SiGe virtual substrates after the 'HF-last' wet-cleaning. We have then examined the impact of the (wet-cleaning+H 2 bake) combination on the surface cross-hatch of SiGe as-grown virtual substrates, focusing on the analysis, notably by atomic force microscopy, of the surface topography before and after the miscellaneous thermal treatments. In situ hydrogen baking steps in between 775 and 850 deg. C do not modify the surface morphology and roughness. An easy and rapid optical characterization method, i.e. the optical interferometry, is presented as well to monitor in line the morphological changes induced by such processing steps as chemical mechanical polishing, wet-cleaning, H 2 bake, etc. Despite the lower resolution of the optical profilometer, the surface roughness values coming from it have been correctly correlated with those obtained from AFM. An optimized 'HF-last' wet-cleaning using a diluted chemistry in conjunction with a H 2 bake at 800 deg. C for 2 min (775 deg. C, 2') is a good compromise for SiGe (Si) surface preparation

  12. Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures.

    Science.gov (United States)

    Kandemir, Ali; Ozden, Ayberk; Cagin, Tahir; Sevik, Cem

    2017-01-01

    Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices. Among these methods, equilibrium molecular dynamics (EMD) is an accurate technique to predict lattice thermal conductivity. In this study, by means of systematic EMD simulations, thermal conductivity of bulk Si-Ge structures (pristine, alloy and superlattice) and their nanostructured one dimensional forms with square and circular cross-section geometries (asymmetric and symmetric) are calculated for different crystallographic directions. A comprehensive temperature analysis is evaluated for selected structures as well. The results show that one-dimensional structures are superior candidates in terms of their low lattice thermal conductivity and thermal conductivity tunability by nanostructuring, such as by diameter modulation, interface roughness, periodicity and number of interfaces. We find that thermal conductivity decreases with smaller diameters or cross section areas. Furthermore, interface roughness decreases thermal conductivity with a profound impact. Moreover, we predicted that there is a specific periodicity that gives minimum thermal conductivity in symmetric superlattice structures. The decreasing thermal conductivity is due to the reducing phonon movement in the system due to the effect of the number of interfaces that determine regimes of ballistic and wave transport phenomena. In some nanostructures, such as nanowire superlattices, thermal conductivity of the Si/Ge system can be reduced to nearly twice that of an amorphous silicon thermal conductivity. Additionally, it is found that one crystal orientation, [Formula: see text]100[Formula: see text], is better than the [Formula: see text]111[Formula: see text] crystal orientation in one-dimensional and bulk SiGe systems. Our results clearly point out the importance of lattice thermal conductivity

  13. Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

    Science.gov (United States)

    Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

    2015-04-01

    Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

  14. Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

    Science.gov (United States)

    Nahali, Masoud; Mehri, Ali

    2018-06-01

    The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.

  15. SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

    OpenAIRE

    Pan, Hsuan-yu

    2010-01-01

    This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in- dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio's Quad. A broadband linear amplifier with 46dBm OIP₃ at 20MHz, 34dBm OIP₃ at 1GHz, 6dB noise figure and 10.3dBm P₁dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain...

  16. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  17. A note on the Sumerian expression SI-ge4-de3/dam

    Directory of Open Access Journals (Sweden)

    Widell, Magnus

    2002-12-01

    Full Text Available The expression SI-ge4-dam/de3 appears in some of the loan documents of the Ur III period where it was used to establish the interest rate or the loan fee. In addition, it is sometimes preceded by ki-ba 'in its/this place/ground' or, in some cases, ma2 -a 'in the boat'. The regular verb SI.g was closely related, perhaps even synonymous with, the reduplication verb ḡar/ḡa2-ḡa2 'to put' or 'to place'. While it may be concluded that SI-ge4-dam/de3 had nothing to do with the verb si 'to fill' or gi4 'to return', the correct analysis of the expression remains somewhat uncertain. The article proposes that the SI should be read se and understood as a phonetic writing for the regular verb se3.g 'to put', 'to place'. The combination of the verb with the ki-ba may suggest that a more parochial form of keeping products existed side by side with the large centralized granaries and storehouses of the city.La expresión SI-ge4-dam/de3 aparece en algunos contratos de préstamo del período de Ur III, donde se empleaba para determinar el interés de dicho préstamo. Por otra parte, este término se hallaba a veces precedido de ki-ba 'en su/este lugar/suelo', y en algunos casos por ma2 -a 'en la barca'. El verbo regular SI.g está muy relacionado (quizás es incluso sinónimo con el verbo de la clase de la reduplicación ḡar/ḡa2-ḡa2 'poner' o 'colocar'. Mientras que puede concluirse que SI-ge4-dam/de3 no tiene nada que ver con el verbo si 'llenar', ni con gi4 'regresar, devolver', el análisis correcto de la expresión sigue siendo, de algún modo, incierto. En el artículo se propone que SI puede leerse como se , entendiéndolo como una escritura fonética del verbo regular se3.g 'poner', 'colocar'. La combinación del verbo con ki-ba podría indicar que, junto a los grandes graneros y almacenes centrales de la ciudad, había un modo distinto y más modesto de conservar los productos.

  18. Observation of spin-selective tunneling in SiGe nanocrystals.

    Science.gov (United States)

    Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

    2011-12-09

    Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

  19. Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, R. A.; McMorrow, D.; Vizkelethy, G.; Ferlet-Cavrois, V.; Baggio, J.; Duhamel, O.; Moen, K. A.; Phillips, S. D.; Diestelhorst, R. M.; hide

    2009-01-01

    IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback.

  20. Technology computer aided design for Si, SiGe and GaAs integrated circuits

    CERN Document Server

    Armstrong, GA

    2007-01-01

    The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-

  1. Electrodialysis operation with buffer solution

    Science.gov (United States)

    Hryn, John N [Naperville, IL; Daniels, Edward J [Orland Park, IL; Krumdick, Greg K [Crete, IL

    2009-12-15

    A new method for improving the efficiency of electrodialysis (ED) cells and stacks, in particular those used in chemical synthesis. The process entails adding a buffer solution to the stack for subsequent depletion in the stack during electrolysis. The buffer solution is regenerated continuously after depletion. This buffer process serves to control the hydrogen ion or hydroxide ion concentration so as to protect the active sites of electrodialysis membranes. The process enables electrodialysis processing options for products that are sensitive to pH changes.

  2. Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching.

    Science.gov (United States)

    Irrera, Alessia; Artoni, Pietro; Fioravanti, Valeria; Franzò, Giorgia; Fazio, Barbara; Musumeci, Paolo; Boninelli, Simona; Impellizzeri, Giuliana; Terrasi, Antonio; Priolo, Francesco; Iacona, Fabio

    2014-02-12

    Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm-2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 μm. NW diameter is compatible with the occurrence of quantum confinement effects and, accordingly, we observed light emission assignable to the presence of Si and Ge nanostructures. We performed a detailed study of the photoluminescence properties of the NWs, with particular attention to the excitation and de-excitation properties as a function of the temperature and of the excitation photon flux, evaluating the excitation cross section and investigating the presence of non-radiative phenomena. PACS: 61.46.Km; 78.55.-m; 78.67.Lt.

  3. Ordered Arrays of SiGe Islands from Low-Energy PECVD

    Directory of Open Access Journals (Sweden)

    Chrastina D

    2010-01-01

    Full Text Available Abstract SiGe islands have been proposed for applications in the fields of microelectronics, optoelectronics and thermoelectrics. Although most of the works in literature are based on MBE, one of the possible advantages of low-energy plasma-enhanced chemical vapor deposition (LEPECVD is a wider range of deposition rates, which in turn results in the possibility of growing islands with a high Ge concentration. We will show that LEPECVD can be effectively used for the controlled growth of ordered arrays of SiGe islands. In order to control the nucleation of the islands, patterned Si (001 substrates were obtained by e-beam lithography (EBL and dry etching. We realized periodic circular pits with diameters ranging from 80 to 300 nm and depths from 65 to 75 nm. Subsequently, thin films (0.8–3.2 nm of pure Ge were deposited by LEPECVD, resulting in regular and uniform arrays of Ge-rich islands. LEPECVD allowed the use of a wide range of growth rates (0.01–0.1 nm s−1 and substrates temperatures (600–750°C, so that the Ge content of the islands could be varied. Island morphology was characterized by AFM, while μ-Raman was used to analyze the Ge content inside the islands and the composition differences between islands on patterned and unpatterned areas of the substrate.

  4. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Science.gov (United States)

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  5. Heat conductivity of buffer materials

    International Nuclear Information System (INIS)

    Boergesson, L.; Fredrikson, Anders; Johannesson, L.E.

    1994-11-01

    The report deals with the thermal conductivity of bentonite based buffer materials. An improved technique for measuring the thermal conductivity of buffer materials is described. Measurements of FLAC calculations applying this technique have led to a proposal of how standardized tests should be conducted and evaluated. The thermal conductivity of bentonite with different void ratio and degree of water saturation has been determined in the following different ways: * Theoretically according to three different investigations by other researchers. * Laboratory measurements with the proposed method. * Results from back-calculated field tests. Comparison and evaluation showed that these results agreed very well, when the buffer material was almost water saturated. However, the influence of the degree of saturation was not very well predicted with the theoretical methods. Furthermore, the field tests showed that the average thermal conductivity in situ of buffer material (compacted to blocks) with low degree of water saturation was lower than expected from laboratory tests. 12 refs, 29 figs, 11 tabs

  6. Buffers and vegetative filter strips

    Science.gov (United States)

    Matthew J. Helmers; Thomas M. Isenhart; Michael G. Dosskey; Seth M. Dabney

    2008-01-01

    This chapter describes the use of buffers and vegetative filter strips relative to water quality. In particular, we primarily discuss the herbaceous components of the following NRCS Conservation Practice Standards.

  7. Relaxed Binaural LCMV Beamforming

    NARCIS (Netherlands)

    Koutrouvelis, A.; Hendriks, R.C.; Heusdens, R.; Jensen, Jesper Rindom

    2017-01-01

    In this paper, we propose a new binaural beamforming technique, which can be seen as a relaxation of the linearly constrained minimum variance (LCMV) framework. The proposed method can achieve simultaneous noise reduction and exact binaural cue preservation of the target source, similar to the

  8. Programmable pH buffers

    Science.gov (United States)

    Gough, Dara Van; Huber, Dale L.; Bunker, Bruce C.; Roberts, Mark E.

    2017-01-24

    A programmable pH buffer comprises a copolymer that changes pK.sub.a at a lower critical solution temperature (LCST) in water. The copolymer comprises a thermally programmable polymer that undergoes a hydrophobic-to-hydrophilic phase change at the LCST and an electrolytic polymer that exhibits acid-base properties that are responsive to the phase change. The programmable pH buffer can be used to sequester CO.sub.2 into water.

  9. Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane

    Energy Technology Data Exchange (ETDEWEB)

    Abedin, A., E-mail: aabedin@kth.se; Moeen, M.; Cappetta, C.; Östling, M.; Radamson, H.H., E-mail: rad@kth.se

    2016-08-31

    This work investigates the crystal quality of SiGe layers grown at low temperatures using trisilane, and germane precursors. The crystal quality sensitivity was monitored for hydrogen chloride and/or minor oxygen amount during SiGe epitaxy or at the interface of SiGe/Si layers. The quality of the epi-layers was examined by quantifying noise parameter, K{sub 1/f} obtained from the power spectral density vs. 1/f curves. The results indicate that while it is difficult to detect small defect densities in SiGe layers by physical material characterization, the noise measurement could reveal the effects of oxygen contamination as low as 0.16 mPa inside and in the interface of the layers. - Highlights: • SiGe layers were grown using trisilane and germane. • Effect of HCl flow on Ge content and growth rate was investigated. • O{sub 2} partial pressures up to 4.3 mPa did not affect x-ray diffraction pattern. • O{sub 2} partial pressures as low as 0.16 mPa increased the noise level. • HCl increased metal contaminations of the layers and the noise level consequently.

  10. Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs

    Energy Technology Data Exchange (ETDEWEB)

    Praveen, K.C.; Pushpa, N.; Naik, P.S. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570 006 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA (United States); Tripathi, Ambuj [Inter University Accelerator Centre (IUAC), New Delhi 110 067 (India); Gnana Prakash, A.P., E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570 006 (India)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Total dose effects of 50 MeV Li3+ ion on 50 GHz SiGe HBTs is investigated. Black-Right-Pointing-Pointer Ion irradiated results were compared with Co-60 gamma results. Black-Right-Pointing-Pointer 50 MeV Li ions create more damage in E-B spacer oxide when compared to Co-60 gamma radiation. Black-Right-Pointing-Pointer Co-60 gamma radiation create more damage in STI oxide when compared to 50 MeV Li ions. Black-Right-Pointing-Pointer Worst case total dose radiation effects can be studied using Pelletron accelerator facilities. - Abstract: We have investigated the effects of 50 MeV lithium ion irradiation on the DC electrical characteristics of first-generation silicon-germanium heterojunction bipolar transistors (50 GHz SiGe HBTs) in the dose range of 600 krad to 100 Mrad. The results of 50 MeV Li{sup 3+} ion irradiation on the SiGe HBTs are compared with 63 MeV proton and Co-60 gamma irradiation results in the same dose range in order to understand the damage induced by different LET species. The radiation response of emitter-base (EB) spacer oxide and shallow trench isolation (STI) oxide to different irradiation types are discussed in this paper. We have also focused on the efficacy in the application of a Pelletron accelerator to study total dose irradiation studies in SiGe HBTs.

  11. The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition

    Directory of Open Access Journals (Sweden)

    Ahmad Ehsan Mohd Tamidi

    2016-01-01

    Full Text Available We have used a molecular dynamics technique to simulate the relationship between nanocluster precipitation and thermal conductivity in Si/Ge amorphous multilayer films, with and without Cu addition. In the study, the Green-Kubo equation was used to calculate thermal conductivity in these materials. Five specimens were prepared: Si/Ge layers, Si/(Ge + Cu layers, (Si + Cu/(Ge + Cu layers, Si/Cu/Ge/Cu layers, and Si/Cu/Ge layers. The number of precipitated nanoclusters in these specimens, which is defined as the number of four-coordinate atoms, was counted along the lateral direction of the specimens. The observed results of precipitate formation were considered in relation to the thermal conductivity results. Enhancement of precipitation of nanoclusters by Cu addition, that is, densification of four-coordinate atoms, can prevent the increment of thermal conductivity. Cu dopant increases the thermal conductivity of these materials. Combining these two points, we concluded that Si/Cu/Ge is the best structure to improve the conversion efficiency of the Si/Ge amorphous multilayer films.

  12. Exposure to buffer solution alters tendon hydration and mechanics.

    Science.gov (United States)

    Safa, Babak N; Meadows, Kyle D; Szczesny, Spencer E; Elliott, Dawn M

    2017-08-16

    A buffer solution is often used to maintain tissue hydration during mechanical testing. The most commonly used buffer solution is a physiological concentration of phosphate buffered saline (PBS); however, PBS increases the tissue's water content and decreases its tensile stiffness. In addition, solutes from the buffer can diffuse into the tissue and interact with its structure and mechanics. These bathing solution effects can confound the outcome and interpretation of mechanical tests. Potential bathing solution artifacts, including solute diffusion, and their effect on mechanical properties, are not well understood. The objective of this study was to measure the effects of long-term exposure of rat tail tendon fascicles to several concentrations (0.9-25%) of NaCl, sucrose, polyethylene glycol (PEG), and SPEG (NaCl+PEG) solutions on water content, solute diffusion, and mechanical properties. We found that with an increase in solute concentration the apparent water content decreased for all solution types. Solutes diffused into the tissue for NaCl and sucrose, however, no solute diffusion was observed for PEG or SPEG. The mechanical properties changed for both NaCl solutions, in particular after long-term (8h) incubation the modulus and equilibrium stress decreased compared to short-term (15min) for 25% NaCl, and the cross sectional area increased for 0.9% NaCl. However, the mechanical properties were unchanged for both PEG and SPEG except for minor alterations in stress relaxation parameters. This study shows that NaCl and sucrose buffer solutions are not suitable for long-term mechanical tests. We therefore propose using PEG or SPEG as alternative buffer solutions that after long-term incubation can maintain tissue hydration without solute diffusion and produce a consistent mechanical response. Copyright © 2017 Elsevier Ltd. All rights reserved.

  13. Hair Dye and Hair Relaxers

    Science.gov (United States)

    ... For Consumers Consumer Information by Audience For Women Hair Dye and Hair Relaxers Share Tweet Linkedin Pin it More sharing ... products. If you have a bad reaction to hair dyes and relaxers, you should: Stop using the ...

  14. Experiments in paramagnetic relaxation

    International Nuclear Information System (INIS)

    Lijphart, E.E.

    1976-01-01

    This thesis presents two attempts to improve the resolving power of the relaxation measurement technique. The first attempt reconsiders the old technique of steady state saturation. When used in conjunction with the pulse technique, it offers the possibility of obtaining additional information about the system in which all-time derivatives are zero; in addition, non-linear effects may be distinguished from each other. The second attempt involved a systematic study of only one system: Cu in the Tutton salts (K and Rb). The systematic approach, the high accuracy of the measurement and the sheer amount of experimental data for varying temperature, magnetic field and concentration made it possible in this case to separate the prevailing relaxation mechanisms reliably

  15. Relaxation from particle production

    Energy Technology Data Exchange (ETDEWEB)

    Hook, Anson; Marques-Tavares, Gustavo [Stanford Institute for Theoretical Physics, Stanford University, Stanford, CA 94305 (United States)

    2016-12-20

    We consider using particle production as a friction force by which to implement a “Relaxion” solution to the electroweak hierarchy problem. Using this approach, we are able to avoid superplanckian field excursions and avoid any conflict with the strong CP problem. The relaxation mechanism can work before, during or after inflation allowing for inflationary dynamics to play an important role or to be completely decoupled.

  16. Magnetic relaxation in anisotropic magnets

    DEFF Research Database (Denmark)

    Lindgård, Per-Anker

    1971-01-01

    The line shape and the kinematic and thermodynamic slowing down of the critical and paramagnetic relaxation in axially anisotropic materials are discussed. Kinematic slowing down occurs only in the longitudinal relaxation function. The thermodynamic slowing down occurs in either the transverse...... or longitudinal relaxation function depending on the sign of the axial anisotropy....

  17. Momentum constraint relaxation

    International Nuclear Information System (INIS)

    Marronetti, Pedro

    2006-01-01

    Full relativistic simulations in three dimensions invariably develop runaway modes that grow exponentially and are accompanied by violations of the Hamiltonian and momentum constraints. Recently, we introduced a numerical method (Hamiltonian relaxation) that greatly reduces the Hamiltonian constraint violation and helps improve the quality of the numerical model. We present here a method that controls the violation of the momentum constraint. The method is based on the addition of a longitudinal component to the traceless extrinsic curvature A ij -tilde, generated by a vector potential w i , as outlined by York. The components of w i are relaxed to solve approximately the momentum constraint equations, slowly pushing the evolution towards the space of solutions of the constraint equations. We test this method with simulations of binary neutron stars in circular orbits and show that it effectively controls the growth of the aforementioned violations. We also show that a full numerical enforcement of the constraints, as opposed to the gentle correction of the momentum relaxation scheme, results in the development of instabilities that stop the runs shortly

  18. Thermophysical tests of buffer materials

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, H. [ITC, Tokyo (Japan); Taniguchi, Wataru

    1999-03-01

    Thermodynamic properties of buffer materials were measured for putting in order thermodynamic constants to be used in the near-field thermal analysis. The thermal diffusivity and thermal conductivity were measured as functions of the water content and temperature to deduce the specific heat. The thermal conductivity and specific heat varied significantly as the water content changed. Obtained values of the specific heat agreed well the expected values calculated based on the constituents of the buffer material. Temperature dependence of the thermodynamic constants was found small below 90degC. From the findings, the thermal conductivity and specific heat of the buffer material were formulated as functions of the water content. Thermodynamic study of powdery bentonite was carried out as well with a purpose of use for filling apertures in the artificial barrier. (H. Baba)

  19. A high linearity SiGe HBT LNA for GPS receiver

    International Nuclear Information System (INIS)

    Luo Yanbin; Shi Jian; Ma Chengyan; Gan Yebing; Qian Min

    2014-01-01

    A high linearity 1.575 GHz SiGe:HBT low noise amplifier (LNA) for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process. A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1.11 dB, a power gain of 18 dB, an output 1 dB compression point of +7.8 dBm and an input third-order intercept point of +1.8 dBm. The chip occupies a 500 × 560 μm 2 area and consumes 3.6 mA from a 2.85 V power supply. (semiconductor integrated circuits)

  20. Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress

    International Nuclear Information System (INIS)

    Alaeddine, A; Genevois, C; Cuvilly, F; Daoud, K; Kadi, M

    2011-01-01

    This paper addresses electromagnetic field stress effects on SiGe heterojunction bipolar transistors (HBTs)' reliability issues, focusing on the relationship between the stress-induced current and device structure degradations. The origin of leakage currents and electrical parameter shifts in failed transistors has been studied by complementary failure analysis techniques. Characterization of the structure before and after ageing was performed by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). For the stressed samples, interface deformations of the titanium (Ti) thin film around all gold (Au) contacts have been clearly detected. These degradations include localized interface reaction between Au and Ti layers as well as their lateral atomic migration causing a significant reduction of Ti thickness. EDS analysis of the disordered region which is near the Si 3 N 4 interface has shown significant signals from Au. These observations could be attributed to the coupling between high current densities induced by stress and thermal effects due to local heating effects

  1. Examination Of Si-Ge Heterostructure Nanowire Growth Using Monte Carlo Simulation

    International Nuclear Information System (INIS)

    Nastovjak, A. G.; Neizvestny, I. G.; Shwartz, N. L.

    2011-01-01

    The process of Si-Ge heterostructures formation in nanowires (NWs) grown by vapor-liquid-solid mechanism was investigated using Monte Carlo simulation. Dependences of catalyst drop composition on temperature, flux intensity and nanowire diameter were obtained. Periodical oscillations of drop composition near mean value were observed. Oscillation results from layer-by-layer growth at the drop-whisker interface and necessity of supersaturation onset to start new layer formation. It was demonstrated that it is impossible to grow atomically abrupt axial heterojunctions via classical vapor-liquid-solid mechanism due to gradual change of catalyst drop composition when switching the fluxes. This phenomenon is the main reason of heterojunction blurriness. Junction abruptness was found to be dependent on nanowhisker diameter: in adsorption-induced growth mode abruptness of heterojunction decreases with diameter and in diffusion-induced mode it increases.

  2. Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Banerjee, G.; Niu, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Ahlgren, D.C.

    1999-01-01

    Low dose rate (LDR) cobalt-60 (0.1 rad(Si)/s) gamma irradiated Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) were studied. Comparisons were made with devices irradiated with 300 rad(Si)/s gamma radiation to verify if LDR radiation is a serious radiation hardness assurance (RHA) issue. Almost no LDR degradation was observed in this technology up to 50 krad(Si). The assumption of the presence of two competing mechanisms is justified by experimental results. At low total dose (le20 krad), an anomalous base current decrease was observed which is attributed to self-annealing of deep-level traps to shallower levels. An increase in base current at larger total doses is attributed to radiation induced generation-recombination (G/R) center generation. Experiments on gate-assisted lateral PNP transistors and 2D numerical simulations using MEDICI were used to confirm these assertions

  3. Micromachined single-level nonplanar polycrystalline SiGe thermal microemitters for infrared dynamic scene projection

    Science.gov (United States)

    Malyutenko, V. K.; Malyutenko, O. Yu.; Leonov, V.; Van Hoof, C.

    2009-05-01

    The technology for self-supported membraneless polycrystalline SiGe thermal microemitters, their design, and performance are presented. The 128-element arrays with a fill factor of 88% and a 2.5-μm-thick resonant cavity have been grown by low-pressure chemical vapor deposition and fabricated using surface micromachining technology. The 200-nm-thick 60×60 μm2 emitting pixels enforced with a U-shape profile pattern demonstrate a thermal time constant of 2-7 ms and an apparent temperature of 700 K in the 3-5 and 8-12 μm atmospheric transparency windows. The application of the devices to the infrared dynamic scene simulation and their benefit over conventional planar membrane-supported emitters are discussed.

  4. Surface and interfacial structural characterization of MBE grown Si/Ge multilayers

    International Nuclear Information System (INIS)

    Saha, Biswajit; Sharma, Manjula; Sarma, Abhisakh; Rath, Ashutosh; Satyam, P.V.; Chakraborty, Purushottam; Sanyal, Milan K.

    2009-01-01

    Si/Ge multilayer structures have been grown by solid source molecular beam epitaxy (MBE) on Si (1 1 1) and (1 0 0) substrates and were characterized by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), high-depth-resolution secondary ion mass spectroscopy (SIMS) and cross-section high-resolution transmission electron microscopy (HRTEM). A reasonably good agreement has been obtained for layer thickness, interfacial structure and diffusion between SIMS and HRTEM measurements. Epitaxial growth and crystalline nature of the individual layer have been probed using cross-sectional HRTEM and XRD measurements. Surface and interface morphological studies by AFM and HRTEM show island-like growth of both Si and Ge nanostructures.

  5. Self-assembly of InAs and Si/Ge quantum dots on structured surfaces

    International Nuclear Information System (INIS)

    Patella, F; Sgarlata, A; Arciprete, F; Nufris, S; Szkutnik, P D; Placidi, E; Fanfoni, M; Motta, N; Balzarotti, A

    2004-01-01

    We discuss the self-aggregation process of InAs and Si-Ge quantum dots (QDs) on natural and patterned GaAs(001) and Si(001) and Si(111) surfaces, with reference to our recent studies with scanning tunnelling and atomic force microscopy and current experimental and theoretical works. Various methods for obtaining naturally structured surfaces are briefly surveyed, as the patterning formed by the surface instability and by the strain in mismatched heteroepitaxy, and the latest methods of pre-patterning and growth at selected sites are discussed. Basic topics are also addressed that determine the final morphology of QDs, such as the wetting layer formation, the elastic strain field and the two-dimensional to three-dimensional phase transition

  6. Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

    CERN Document Server

    Franco, Jacopo; Groeseneken, Guido

    2014-01-01

    Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and pr...

  7. ACETIC ACID AND A BUFFER

    DEFF Research Database (Denmark)

    2009-01-01

    The present invention relates to a composition comprising : a) 0.01-20% wt/wt acetic acid and b) a physiologically tolerable buffer capable of maintaining acetic acid at a pH in the range of 2-7; and use of such a composition as an antimicrobial agent.......The present invention relates to a composition comprising : a) 0.01-20% wt/wt acetic acid and b) a physiologically tolerable buffer capable of maintaining acetic acid at a pH in the range of 2-7; and use of such a composition as an antimicrobial agent....

  8. A Capital Adequacy Buffer Model

    NARCIS (Netherlands)

    D.E. Allen (David); M.J. McAleer (Michael); R.J. Powell (Robert); A.K. Singh (Abhay)

    2013-01-01

    markdownabstract__Abstract__ In this paper, we develop a new capital adequacy buffer model (CABM) which is sensitive to dynamic economic circumstances. The model, which measures additional bank capital required to compensate for fluctuating credit risk, is a novel combination of the Merton

  9. Smoothing type buffer memory device

    International Nuclear Information System (INIS)

    Podorozhnyj, D.M.; Yashin, I.V.

    1990-01-01

    The layout of the micropower 4-bit smoothing type buffer memory device allowing one to record without counting the sequence of input randomly distributed pulses in multi-channel devices with serial poll, is given. The power spent by a memory cell for one binary digit recording is not greater than 0.15 mW, the device dead time is 10 mus

  10. Variational formulation of relaxed and multi-region relaxed magnetohydrodynamics

    Science.gov (United States)

    Dewar, R. L.; Yoshida, Z.; Bhattacharjee, A.; Hudson, S. R.

    2015-12-01

    > Ideal magnetohydrodynamics (IMHD) is strongly constrained by an infinite number of microscopic constraints expressing mass, entropy and magnetic flux conservation in each infinitesimal fluid element, the latter preventing magnetic reconnection. By contrast, in the Taylor relaxation model for formation of macroscopically self-organized plasma equilibrium states, all these constraints are relaxed save for the global magnetic fluxes and helicity. A Lagrangian variational principle is presented that leads to a new, fully dynamical, relaxed magnetohydrodynamics (RxMHD), such that all static solutions are Taylor states but also allows state with flow. By postulating that some long-lived macroscopic current sheets can act as barriers to relaxation, separating the plasma into multiple relaxation regions, a further generalization, multi-region relaxed magnetohydrodynamics (MRxMHD) is developed.

  11. Dynamics of relaxed inflation

    Science.gov (United States)

    Tangarife, Walter; Tobioka, Kohsaku; Ubaldi, Lorenzo; Volansky, Tomer

    2018-02-01

    The cosmological relaxation of the electroweak scale has been proposed as a mechanism to address the hierarchy problem of the Standard Model. A field, the relaxion, rolls down its potential and, in doing so, scans the squared mass parameter of the Higgs, relaxing it to a parametrically small value. In this work, we promote the relaxion to an inflaton. We couple it to Abelian gauge bosons, thereby introducing the necessary dissipation mechanism which slows down the field in the last stages. We describe a novel reheating mechanism, which relies on the gauge-boson production leading to strong electro-magnetic fields, and proceeds via the vacuum production of electron-positron pairs through the Schwinger effect. We refer to this mechanism as Schwinger reheating. We discuss the cosmological dynamics of the model and the phenomenological constraints from CMB and other experiments. We find that a cutoff close to the Planck scale may be achieved. In its minimal form, the model does not generate sufficient curvature perturbations and additional ingredients, such as a curvaton field, are needed.

  12. A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD

    Science.gov (United States)

    Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Schubert, Markus Andreas; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd

    2017-12-01

    Self-ordered three-dimensional body-centered tetragonal (BCT) SiGe nanodot structures are fabricated by depositing SiGe/Si superlattice layer stacks using reduced pressure chemical vapor deposition. For high enough Ge content in the island (>30%) and deposition temperature of the Si spacer layers (T > 700 °C), we observe the formation of an ordered array with islands arranged in staggered position in adjacent layers. The in plane periodicity of the islands can be selected by a suitable choice of the annealing temperature before the Si spacer layer growth and of the SiGe dot volume, while only a weak influence of the Ge concentration is observed. Phase-field simulations are used to clarify the driving force determining the observed BCT ordering, shedding light on the competition between heteroepitaxial strain and surface-energy minimization in the presence of a non-negligible surface roughness.

  13. Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2010-01-01

    The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.

  14. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Yang, Mo [College of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)

    2013-12-21

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  15. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    International Nuclear Information System (INIS)

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-01-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective

  16. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Science.gov (United States)

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-12-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  17. Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands

    Science.gov (United States)

    Chang, Yuan-Ming; Jian, Sheng-Rui; Juang, Jenh-Yih

    2010-09-01

    A lithography-free method for fabricating the nanogrids and quasi-beehive nanostructures on Si substrates is developed. It combines sequential treatments of thermal annealing with reactive ion etching (RIE) on SiGe thin films grown on (100)-Si substrates. The SiGe thin films deposited by ultrahigh vacuum chemical vapor deposition form self-assembled nanoislands via the strain-induced surface roughening (Asaro-Tiller-Grinfeld instability) during thermal annealing, which, in turn, serve as patterned sacrifice regions for subsequent RIE process carried out for fabricating nanogrids and beehive-like nanostructures on Si substrates. The scanning electron microscopy and atomic force microscopy observations confirmed that the resultant pattern of the obtained structures can be manipulated by tuning the treatment conditions, suggesting an interesting alternative route of producing self-organized nanostructures.

  18. Experimental model of human corpus cavernosum smooth muscle relaxation

    Directory of Open Access Journals (Sweden)

    Rommel P. Regadas

    2010-08-01

    Full Text Available PURPOSE: To describe a technique for en bloc harvesting of the corpus cavernosum, cavernous artery and urethra from transplant organ donors and contraction-relaxation experiments with corpus cavernosum smooth muscle. MATERIALS AND METHODS: The corpus cavernosum was dissected to the point of attachment with the crus penis. A 3 cm segment (corpus cavernosum and urethra was isolated and placed in ice-cold sterile transportation buffer. Under magnification, the cavernous artery was dissected. Thus, 2 cm fragments of cavernous artery and corpus cavernosum were obtained. Strips measuring 3 x 3 x 8 mm3 were then mounted vertically in an isolated organ bath device. Contractions were measured isometrically with a Narco-Biosystems force displacement transducer (model F-60, Narco-Biosystems, Houston, TX, USA and recorded on a 4-channel Narco-Biosystems desk model polygraph. RESULTS: Phenylephrine (1µM was used to induce tonic contractions in the corpus cavernosum (3 - 5 g tension and cavernous artery (0.5 - 1g tension until reaching a plateau. After precontraction, smooth muscle relaxants were used to produce relaxation-response curves (10-12M to 10-4 M. Sodium nitroprusside was used as a relaxation control. CONCLUSION: The harvesting technique and the smooth muscle contraction-relaxation model described in this study were shown to be useful instruments in the search for new drugs for the treatment of human erectile dysfunction.

  19. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    International Nuclear Information System (INIS)

    Ghandi, R.; Kolahdouz, M.; Hallstedt, J.; Wise, R.; Wejtmans, Hans; Radamson, H.H.

    2008-01-01

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si 1-x Ge x (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers

  20. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Ghandi, R. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: ghandi@kth.se; Kolahdouz, M.; Hallstedt, J. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden); Wise, R.; Wejtmans, Hans [Texas Instrument, 13121 TI Boulevard, Dallas, Tx 75243 (United States); Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-11-03

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si{sub 1-x}Ge{sub x} (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers.

  1. The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

    International Nuclear Information System (INIS)

    Brehm, M.; Grydlik, M.; Groiss, H.; Hackl, F.; Schaeffler, F.; Fromherz, T.; Bauer, G.

    2011-01-01

    For the prototypical SiGe/Si(001) Stranski-Krastanow (SK) growth system, the influence of intermixing caused by the deposition of a Si cap layer at temperatures T cap between 300 deg. C and 700 deg. C is studied both for the SiGe wetting layer (WL) and the SiGe islands. Systematic growth experiments were carried out with an ultrahigh resolution of down to 0.005 monolayers (ML) of deposited Ge. The properties of the samples were investigated via photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy. We studied in detail the influence of T cap in the three main coverage regions of SiGe SK growth, which are (i) the WL build-up regime, (ii) the island nucleation regime, where most of the Ge is supplied via material transfer from the WL, and (iii) the saturation regime, where the WL thickness remains initially stable. At T cap = 300 deg. C, we found that both the WL and the island are essentially preserved in composition and shape, whereas at 500 deg. C the WL becomes heavily alloyed during capping, and at 700 deg. C the islands also become alloyed. At T cap = 500 deg. C we found enhanced WL intermixing in the presence of dome-shaped islands, whereas at T cap 700 deg. C the WL properties become dominated by the dissolution of pyramid-shaped islands upon capping. At Ge coverages above ≅6 ML, we found an unexpected thickening of the WL, almost independently of T cap . This finding suggests that the density and the volume of the dome-shaped islands have an upper limit, beyond which excess Ge from the external source again becomes incorporated into the WL. Finally, we compared PL spectra with AFM-based evaluations of the integral island volumes in order to determine in a straightforward manner the average composition of the SiGe islands.

  2. The thermodynamic-buffer enzymes.

    Science.gov (United States)

    Stucki, J W

    1980-08-01

    Oxidative phosphorylation operates at optimal efficiency if and only if the condition of conductance matching L33/L11 = square root 1-q2 is fulfilled. In this relation L11 is the phenomenological conductance of phosphorylation, L33 the phenomenological conductance of the load, i.e. the irreversible ATP-utilizing processes in the cell, and q the degree of coupling of oxidative phosphorylation driven by respiration. Since during short time intervals L11 and q are constant whereas L33 fluctuates in the cell, oxidative phosphorylation would only rarely operate at optimal efficiency due to violation of conductance matching. This paper demonstrates that the reversible ATP-utilizing reaction catalyzed by adenylate kinase can effectively compensate deviations from conductance matching in the presence of a fluctuating L33 and hence allows oxidative phosphorylation to operate at optimal efficiency in the cell. Since the adenylate kinase reaction was found to buffer a thermodynamic potential, i.e. the phosphate potential, this finding was generalized to the concept of thermodynamic buffering. The thermodynamic buffering ability of the adenylate kinase reaction was demonstrated by experiments with incubated rat-liver mitochondria. Considerations of changes introduced in the entropy production by the adenylate kinase reaction allowed to establish the theoretical framework for thermodynamic buffering. The ability of thermodynamic buffering to compensate deviations from conductance matching in the presence of fluctuating loads was demonstrated by computer simulations. The possibility of other reversible ATP-utilizing reactions, like the ones catalyzed by creatine kinase and arginine kinase, to contribute to thermodynamic buffering is discussed. Finally, the comparison of the theoretically calculated steady-stae cytosolic adenine nucleotide concentrations with experimental data from perfused livers demonstrated that in livers from fed rats conductance matching is fulfilled on a

  3. Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2006-01-01

    .5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated......Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat...... conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7...

  4. Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

    Science.gov (United States)

    Cui, J; Lv, Y; Yang, X J; Fan, Y L; Zhong, Z; Jiang, Z M

    2011-03-25

    The size uniformity of self-assembled SiGe quantum rings, which are formed by capping SiGe quantum dots with a thin Si layer, is found to be greatly influenced by the growth temperature and the areal density of SiGe quantum dots. Higher growth temperature benefits the size uniformity of quantum dots, but results in low Ge concentration as well as asymmetric Ge distribution in the dots, which induces the subsequently formed quantum rings to be asymmetric in shape or even broken somewhere in the ridge of rings. Low growth temperature degrades the size uniformity of quantum dots, and thus that of quantum rings. A high areal density results in the expansion and coalescence of neighboring quantum dots to form a chain, rather than quantum rings. Uniform quantum rings with a size dispersion of 4.6% and an areal density of 7.8×10(8) cm(-2) are obtained at the optimized growth temperature of 640°C.

  5. Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

    Science.gov (United States)

    Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

    2010-03-01

    It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.

  6. Properties of laser-crystallized polycrystalline SiGe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weizman, Moshe

    2008-06-06

    In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 0SiGe films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

  7. Urban Runoff: Model Ordinances for Aquatic Buffers

    Science.gov (United States)

    Aquatic Buffers serve as natural boundaries between local waterways and existing development. The model and example ordinaces below provide suggested language or technical guidance designed to create the most effective stream buffer zones possible.

  8. Buffer Zone Requirements for Soil Fumigant Applications

    Science.gov (United States)

    Updated pesticide product labels require fumigant users to establish a buffer zone around treated fields to reduce risks to bystanders. Useful information includes tarp testing guidance and a buffer zone calculator.

  9. Swelling characteristics of buffer material

    International Nuclear Information System (INIS)

    Suzuki, Hideaki; Fujita, Tomoo

    1999-12-01

    After emplacement of the engineered barrier system (EBS), it is expected that the near-field environment will be impacted by phenomena such as heat dissipation by conduction and other heat transfer mechanism, infiltration of groundwater from the surrounding rock into the EBS, generation of swelling pressure in the buffer due to water infiltration and the stress imposed by the overburden pressure. These phenomena are not all independent, but can be strongly influenced by, and coupled with, each other. Evaluating these coupled thermo-hydro-mechanical phenomena is important in order to clarify the initial transient behavior of the engineered barrier system within the near-field. This report describes the results on measurement of swelling amount and stress at boundary built up under restraint condition with water uptake. The following results are identified. (1) The swelling stress of buffer material at saturated condition tends to be independent of effects of pore water pressure and synthetic sea water, and to decrease with increasing temperature. The swelling stress can be explained by the effective dry density. (2) The strain due to swelling estimated from the results of the swelling amount of buffer material is proportional to swelling stress. (3) The swelling stress and strain under unsaturated condition increase with water uptake. (author)

  10. Buffer erosion in dilute groundwater

    International Nuclear Information System (INIS)

    Schatz, T.; Kanerva, N.; Martikainen, J.; Sane, P.; Olin, M.; Seppaelae, A.; Koskinen, K.

    2013-08-01

    One scenario of interest for repository safety assessment involves the loss of bentonite buffer material in contact with dilute groundwater flowing through a transmissive fracture interface. In order to examine the extrusion/erosion behavior of bentonite buffer material under such circumstances, a series of experiments were performed in a flow-through, 1 mm aperture, artificial fracture system. These experiments covered a range of solution chemistry (salt concentration and composition), material composition (sodium montmorillonite and admixtures with calcium montmorillonite), and flow velocity conditions. No erosion was observed for sodium montmorillonite against solution compositions from 0.5 g/L to 10 g/L NaCl. No erosion was observed for 50/50 calcium/sodium montmorillonite against 0.5 g/L NaCl. Erosion was observed for both sodium montmorillonite and 50/50 calcium/sodium montmorillonite against solution compositions ≤ 0.25 g/L NaCl. The calculated erosion rates for the tests with the highest levels of measured erosion, i.e., the tests run under the most dilute conditions (ionic strength (IS) < ∼1 mM), were well-correlated to flow velocity, whereas the calculated erosion rates for the tests with lower levels of measured erosion, i.e., the tests run under somewhat less dilute conditions (∼1 mM < IS < ∼4 mM), were not similarly correlated indicating that material and solution composition can significantly affect erosion rates. In every experiment, both erosive and non-erosive, emplaced buffer material extruded into the fracture and was observed to be impermeable to water flowing in the fracture effectively forming an extended diffusive barrier around the intersecting fracture/buffer interface. Additionally, a model which was developed previously to predict the rate of erosion of bentonite buffer material in low ionic strength water in rock fracture environments was applied to three different cases: sodium montmorillonite expansion in a vertical tube, a

  11. BUFFER CAPACITY IN HETEROGENEOUS MULTICOMPONENT SYSTEMS. REVIEW

    Directory of Open Access Journals (Sweden)

    Oxana Spinu

    2015-12-01

    Full Text Available The quantitative basis of the theory of buffer properties for two-phase acid-base buffer systems and for multicomponent heterogeneous systems has been derived. The analytical equations with respect to all components for diverse multicomponent systems were deduced. It has been established, that the buffer capacities of components are mutually proportional.

  12. Doped LZO buffer layers for laminated conductors

    Science.gov (United States)

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  13. RESEARCH NEEDS IN RIPARIAN BUFFER RESTORATION

    Science.gov (United States)

    Riparian buffer restorations are used as management tools to produce favorable water quality impacts; moreover, the basis for riparian buffers as an instrument of water quality restoration rests on a relatively firm foundation. However, the extent to which buffers can restore rip...

  14. Suspended mid-infrared fiber-to-chip grating couplers for SiGe waveguides

    Science.gov (United States)

    Favreau, Julien; Durantin, Cédric; Fédéli, Jean-Marc; Boutami, Salim; Duan, Guang-Hua

    2016-03-01

    Silicon photonics has taken great importance owing to the applications in optical communications, ranging from short reach to long haul. Originally dedicated to telecom wavelengths, silicon photonics is heading toward circuits handling with a broader spectrum, especially in the short and mid-infrared (MIR) range. This trend is due to potential applications in chemical sensing, spectroscopy and defense in the 2-10 μm range. We previously reported the development of a MIR photonic platform based on buried SiGe/Si waveguide with propagation losses between 1 and 2 dB/cm. However the low index contrast of the platform makes the design of efficient grating couplers very challenging. In order to achieve a high fiber-to-chip efficiency, we propose a novel grating coupler structure, in which the grating is locally suspended in air. The grating has been designed with a FDTD software. To achieve high efficiency, suspended structure thicknesses have been jointly optimized with the grating parameters, namely the fill factor, the period and the grating etch depth. Using the Efficient Global Optimization (EGO) method we obtained a configuration where the fiber-to-waveguide efficiency is above 57 %. Moreover the optical transition between the suspended and the buried SiGe waveguide has been carefully designed by using an Eigenmode Expansion software. Transition efficiency as high as 86 % is achieved.

  15. Thermal conductivity of nanocrystalline SiGe alloys using molecular dynamics simulations

    Science.gov (United States)

    Abs da Cruz, Carolina; Katcho, Nebil A.; Mingo, Natalio; Veiga, Roberto G. A.

    2013-10-01

    We have studied the effect of nanocrystalline microstructure on the thermal conductivity of SiGe alloys using molecular dynamics simulations. Nanograins are modeled using both the coincidence site lattice and the Voronoi tessellation methods, and the thermal conductivity is computed using the Green-Kubo formalism. We analyze the dependence of the thermal conductivity with temperature, grain size L, and misorientation angle. We find a power dependence of L1/4 of the thermal conductivity with the grain size, instead of the linear dependence shown by non-alloyed nanograined systems. This dependence can be derived analytically underlines the important role that disorder scattering plays even when the grains are of the order of a few nm. This is in contrast to non-alloyed systems, where phonon transport is governed mainly by the boundary scattering. The temperature dependence is weak, in agreement with experimental measurements. The effect of angle misorientation is also small, which stresses the main role played by the disorder scattering.

  16. Gas spectroscopy system with 245 GHz transmitter and receiver in SiGe BiCMOS

    Science.gov (United States)

    Schmalz, Klaus; Rothbart, Nick; Borngräber, Johannes; Yilmaz, Selahattin Berk; Kissinger, Dietmar; Hübers, Heinz-Wilhelm

    2017-02-01

    The implementation of an integrated mm-wave transmitter (TX) and receiver (RX) in SiGe BiCMOS or CMOS technology offers a path towards a compact and low-cost system for gas spectroscopy. Previously, we have demonstrated TXs and RXs for spectroscopy at 238 -252 GHz and 495 - 497 GHz using external phase-locked loops (PLLs) with signal generators for the reference frequency ramps. Here, we present a more compact system by using two external fractional-N PLLs allowing frequency ramps for the TX and RX, and for TX with superimposed frequency shift keying (FSK) or reference frequency modulation realized by a direct digital synthesizer (DDS) or an arbitrary waveform generator. The 1.9 m folded gas absorption cell, the vacuum pumps, as well as the TX and RX are placed on a portable breadboard with dimensions of 75 cm x 45 cm. The system performance is evaluated by high-resolution absorption spectra of gaseous methanol at 13 Pa for 241 - 242 GHz. The 2f (second harmonic) content of the absorption spectrum of the methanol was obtained by detecting the IF power of RX using a diode power sensor connected to a lock-in amplifier. The reference frequency modulation reveals a higher SNR (signal-noise-ratio) of 98 within 32 s acquisition compared to 66 for FSK. The setup allows for jumping to preselected frequency regions according to the spectral signature thus reducing the acquisition time by up to one order of magnitude.

  17. Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation.

    Science.gov (United States)

    Yang, Lina; Minnich, Austin J

    2017-03-14

    Nanocrystalline thermoelectric materials based on Si have long been of interest because Si is earth-abundant, inexpensive, and non-toxic. However, a poor understanding of phonon grain boundary scattering and its effect on thermal conductivity has impeded efforts to improve the thermoelectric figure of merit. Here, we report an ab-initio based computational study of thermal transport in nanocrystalline Si-based materials using a variance-reduced Monte Carlo method with the full phonon dispersion and intrinsic lifetimes from first-principles as input. By fitting the transmission profile of grain boundaries, we obtain excellent agreement with experimental thermal conductivity of nanocrystalline Si [Wang et al. Nano Letters 11, 2206 (2011)]. Based on these calculations, we examine phonon transport in nanocrystalline SiGe alloys with ab-initio electron-phonon scattering rates. Our calculations show that low energy phonons still transport substantial amounts of heat in these materials, despite scattering by electron-phonon interactions, due to the high transmission of phonons at grain boundaries, and thus improvements in ZT are still possible by disrupting these modes. This work demonstrates the important insights into phonon transport that can be obtained using ab-initio based Monte Carlo simulations in complex nanostructured materials.

  18. SiGe HBT cryogenic preamplification for higher bandwidth donor spin read-out

    Science.gov (United States)

    Curry, Matthew; Carr, Stephen; Ten-Eyck, Greg; Wendt, Joel; Pluym, Tammy; Lilly, Michael; Carroll, Malcolm

    2014-03-01

    Single-shot read-out of a donor spin can be performed using the response of a single-electron-transistor (SET). This technique can produce relatively large changes in current, on the order of 1 (nA), to distinguish between the spin states. Despite the relatively large signal, the read-out time resolution has been limited to approximately 100 (kHz) of bandwidth because of noise. Cryogenic pre-amplification has been shown to extend the response of certain detection circuits to shorter time resolution and thus higher bandwidth. We examine a SiGe HBT circuit configuration for cryogenic preamplification, which has potential advantages over commonly used HEMT configurations. Here we present 4 (K) measurements of a circuit consisting of a Silicon-SET inline with a Heterojunction-Bipolar-Transistor (HBT). We compare the measured bandwidth with and without the HBT inline and find that at higher frequencies the signal-to-noise-ratio (SNR) with the HBT inline exceeds the SNR without the HBT inline. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  19. Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

    International Nuclear Information System (INIS)

    Kinoshita, K; Arai, Y; Inatomi, Y; Sakata, K; Takayanagi, M; Yoda, S; Miyata, H; Tanaka, R; Sone, T; Yoshikawa, J; Kihara, T; Shibayama, H; Kubota, Y; Shimaoka, T; Warashina, Y

    2011-01-01

    Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si 0.5 Ge 0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si 0.5 Ge 0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.

  20. LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr Calorimeter

    CERN Document Server

    Dressnandt, N; Rescia, S; Vernon, E

    2009-01-01

    We have designed and fabricated a very low noise preamplifier and shaper to replace the existing ATLAS Liquid Argon readout for use at the Large Hadron Collider upgrade (sLHC). IBM’s 8WL 130nm SiGe process was chosen for it’s radiation tolerance, low noise bipolar NPN devices, wide voltage rand and potential use in other sLHC detector subsystems. Although the requirements for the final design can not be set at this time, the prototype was designed to accommodate a 16 bit dynamic range. This was accomplished by using a single stage, low noise, wide dynamic range preamp followed by a dual range shaper. The low noise of the preamp is made possible by the low base spreading resistance of the Silicon Germanium NPN bipolar transistors. The relatively high voltage rating of the NPN transistors is exploited to allow a gain of 650V/A in the preamplifier which eases the input voltage noise requirement on the shaper. Each shaper stage is designed as a cascaded differential operational amplifier doublet with a common...

  1. LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr

    CERN Document Server

    Rescia, S; Newcomer, F M; Dressnandt, N

    2009-01-01

    We have designed and fabricated a very low noise preamplifier and shaper with a (RC)2 – CR response to replace the existing ATLAS Liquid Argon readout for use at SLHC. IBM’s 8WL 130nm SiGe process was chosen for its radiation tolerance wide voltage range and potential for use in other LHC detector subsystems. The required dynamic range of 15 bits is accomplished by utilization of a single stage, low noise, wide dynamic range preamp connected to a dual range shaper. The low noise of the preamp (~.01nA / √Hz) is achieved by utilizing the process Silicon Germanium bipolar transistors. The relatively high voltage rating of the npn transistors is exploited to allow a gain of 650V/A. With this gain the equivalent input voltage noise requirement on the shaper to about 2.2nV/ √Hz. Each shaper stage is designed as a cascaded differential op amp doublet with a common mode operating point regulated by an internal feedback loop. The shaper outputs are designed to be compatible with the 130nm CMOS ADC being develo...

  2. Thermal boundary resistance at Si/Ge interfaces by molecular dynamics simulation

    Directory of Open Access Journals (Sweden)

    Tianzhuo Zhan

    2015-04-01

    Full Text Available In this study, we investigated the temperature dependence and size effect of the thermal boundary resistance at Si/Ge interfaces by non-equilibrium molecular dynamics (MD simulations using the direct method with the Stillinger-Weber potential. The simulations were performed at four temperatures for two simulation cells of different sizes. The resulting thermal boundary resistance decreased with increasing temperature. The thermal boundary resistance was smaller for the large cell than for the small cell. Furthermore, the MD-predicted values were lower than the diffusion mismatch model (DMM-predicted values. The phonon density of states (DOS was calculated for all the cases to examine the underlying nature of the temperature dependence and size effect of thermal boundary resistance. We found that the phonon DOS was modified in the interface regions. The phonon DOS better matched between Si and Ge in the interface region than in the bulk region. Furthermore, in interface Si, the population of low-frequency phonons was found to increase with increasing temperature and cell size. We suggest that the increasing population of low-frequency phonons increased the phonon transmission coefficient at the interface, leading to the temperature dependence and size effect on thermal boundary resistance.

  3. Influence of irradiation on mechanical properties of Si-Ge alloys

    Energy Technology Data Exchange (ETDEWEB)

    Sichinava, Avtandil; Bokuchava, Guram; Chubinidze, Giorgi; Archuadze, Giorgi [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Gapishvili, Nodar [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Georgian Technical University, Tbilisi (Georgia)

    2017-07-15

    Impact of various irradiation (Ar and He ions, high energy electrons) on microhardness and indentation of monocrystalline Si{sub 0,98}Ge{sub 0,02} alloy is studied. Samples of Si and SiGe alloy are obtained by Czochralski (CZ) method in the [111] direction in the atmosphere of high purity Ar. High energy electron irradiation with fluence of ∝10{sup 12} cm{sup -2} is conducted at the Clinac 2100iX. Ar and He ion implantation is performed on modernized ''VEZUVI-3M'' plant. It is shown that for all types of irradiation the microhardness and indentation modulus versus load are characterized by reverse indentation size effect (ISE). With the increase of fluences of Ar and He ions, the maximum value of the effect increases. At high values of loading force impact on the indenter the mechanical characteristics slowly decrease. Impact of isochronous thermal annealing on mechanical properties of high energy electron irradiated samples is studied. Non-monotonic changes of microhardness and indentation modulus are revealed in the temperature range of 200-260 C. It is proposed that such changes are caused by radiation defects transformation. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Practice guidelines on the use of esophageal manometry - A GISMAD-SIGE-AIGO medical position statement.

    Science.gov (United States)

    Savarino, Edoardo; de Bortoli, Nicola; Bellini, Massimo; Galeazzi, Francesca; Ribolsi, Mentore; Salvador, Renato; Savarino, Vincenzo; Penagini, Roberto

    2016-10-01

    Patients with esophageal symptoms potentially associated to esophageal motor disorders such as dysphagia, chest pain, heartburn and regurgitation, represent one of the most frequent reasons for referral to gastroenterological evaluation. The utility of esophageal manometry in clinical practice is: (1) to accurately define esophageal motor function, (2) to identify abnormal motor function, and (3) to establish a treatment plan based on motor abnormalities. With this in mind, in the last decade, investigations and technical advances, with the introduction of high-resolution esophageal manometry, have enhanced our understanding and management of esophageal motility disorders. The following recommendations were developed to assist physicians in the appropriate use of esophageal manometry in modern patient care. They were discussed and approved after a comprehensive review of the medical literature pertaining to manometric techniques and their recent application. This position statement created under the auspices of the Gruppo Italiano di Studio per la Motilità dell'Apparato Digerente (GISMAD), Società Italiana di Gastroenterologia ed Endoscopia Digestiva (SIGE) and Associazione Italiana Gastroenterologi ed Endoscopisti Digestivi Ospedalieri (AIGO) is intended to help clinicians in applying manometric studies in the most fruitful manner within the context of their patients with esophageal symptoms. Copyright © 2016 Editrice Gastroenterologica Italiana S.r.l. Published by Elsevier Ltd. All rights reserved.

  5. Improving Water Quality With Conservation Buffers

    Science.gov (United States)

    Lowrance, R.; Dabney, S.; Schultz, R.

    2003-12-01

    Conservation buffer technologies are new approaches that need wider application. In-field buffer practices work best when used in combination with other buffer types and other conservation practices. Vegetative barriers may be used in combination with edge-of-field buffers to protect and improve their function and longevity by dispersing runoff and encouraging sediment deposition upslope of the buffer. It's important to understand how buffers can be managed to help reduce nutrient transport potential for high loading of nutrients from manure land application sites, A restored riparian wetland buffer retained or removed at least 59 percent of the nitrogen and 66 percent of the phosphorus that entered from an adjacent manure land application site. The Bear Creek National Restoration Demonstration Watershed project in Iowa has been the site of riparian forest buffers and filter strips creation; constructed wetlands to capture tile flow; stream-bank bioengineering; in-stream structures; and controlling livestock grazing. We need field studies that test various widths of buffers of different plant community compositions for their efficacy in trapping surface runoff, reducing nonpoint source pollutants in subsurface waters, and enhancing the aquatic ecosystem. Research is needed to evaluate the impact of different riparian grazing strategies on channel morphology, water quality, and the fate of livestock-associated pathogens and antibiotics. Integrating riparian buffers and other conservation buffers into these models is a key objective in future model development.

  6. Buffered Communication Analysis in Distributed Multiparty Sessions

    Science.gov (United States)

    Deniélou, Pierre-Malo; Yoshida, Nobuko

    Many communication-centred systems today rely on asynchronous messaging among distributed peers to make efficient use of parallel execution and resource access. With such asynchrony, the communication buffers can happen to grow inconsiderately over time. This paper proposes a static verification methodology based on multiparty session types which can efficiently compute the upper bounds on buffer sizes. Our analysis relies on a uniform causality audit of the entire collaboration pattern - an examination that is not always possible from each end-point type. We extend this method to design algorithms that allocate communication channels in order to optimise the memory requirements of session executions. From these analyses, we propose two refinements methods which respect buffer bounds: a global protocol refinement that automatically inserts confirmation messages to guarantee stipulated buffer sizes and a local protocol refinement to optimise asynchronous messaging without buffer overflow. Finally our work is applied to overcome a buffer overflow problem of the multi-buffering algorithm.

  7. A THEORETICAL DISCUSSION OF THE ECONOMIC EFFECTS OF BUFFER STOCKS AND BUFFER FUNDS

    OpenAIRE

    Simmons, Phil

    1988-01-01

    It has been established that the absence of risk markets justifies market intervention in principle. The form of intervention that has been discussed most widely in the literature is the buffer stock. This paper points out that other forms of intervention, specifically buffer funds, are likely to perform better. The analysis shows that buffer funds are likely to outperform buffer stocks because they address market failure more directly. A sub-theme developed in this paper is that since buffer...

  8. Buffered Electrochemical Polishing of Niobium

    Energy Technology Data Exchange (ETDEWEB)

    Ciovati, Gianluigi [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Tian, Hui [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); College of William and Mary, Williamsburg, VA (United States); Corcoran, Sean [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)

    2011-03-01

    The standard preparation of superconducting radio-frequency (SRF) cavities made of pure niobium include the removal of a 'damaged' surface layer, by buffered chemical polishing (BCP) or electropolishing (EP), after the cavities are formed. The performance of the cavities is characterized by a sharp degradation of the quality factor when the surface magnetic field exceeds about 90 mT, a phenomenon referred to as 'Q-drop.' In cavities made of polycrystalline fine grain (ASTM 5) niobium, the Q-drop can be significantly reduced by a low-temperature (? 120 °C) 'in-situ' baking of the cavity if the chemical treatment was EP rather than BCP. As part of the effort to understand this phenomenon, we investigated the effect of introducing a polarization potential during buffered chemical polishing, creating a process which is between the standard BCP and EP. While preliminary results on the application of this process to Nb cavities have been previously reported, in this contribution we focus on the characterization of this novel electrochemical process by measuring polarization curves, etching rates, surface finish, electrochemical impedance and the effects of temperature and electrolyte composition. In particular, it is shown that the anodic potential of Nb during BCP reduces the etching rate and improves the surface finish.

  9. Relaxed states with plasma flow

    International Nuclear Information System (INIS)

    Avinash, K.; Taylor, J.B.

    1991-01-01

    In the theory of relaxation, a turbulent plasma reaches a state of minimum energy subject to constant magnetic helicity. In this state the plasma velocity is zero. Attempts have been made by introducing a number of different constraints, to obtain relaxed states with plasma flow. It is shown that these alternative constraints depend on two self-helicities, one for ions, and one for electrons. However, whereas there are strong arguments for the effective invariance of the original magnetic-helicity, these arguments do not apply to the self-helicities. Consequently the existence of relaxed states with flow remains in doubt. (author)

  10. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

    International Nuclear Information System (INIS)

    Chen Liang; Zhang Wan-Rong; Jin Dong-Yue; Shen Pei; Xie Hong-Yun; Ding Chun-Bao; Xiao Ying; Sun Bo-Tao; Wang Ren-Qing

    2011-01-01

    A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions. (interdisciplinary physics and related areas of science and technology)

  11. The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

    Energy Technology Data Exchange (ETDEWEB)

    Vinayakprasanna, N. H.; Praveen, K. C.; Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006 (India); Cressler, J. D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta-30332, GA (United States)

    2016-05-23

    The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h{sub FE} of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.

  12. The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

    International Nuclear Information System (INIS)

    Vinayakprasanna, N. H.; Praveen, K. C.; Prakash, A. P. Gnana; Cressler, J. D.

    2016-01-01

    The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h_F_E of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.

  13. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

    International Nuclear Information System (INIS)

    RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

    2007-01-01

    The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

  14. Relaxed states of tokamak plasmas

    International Nuclear Information System (INIS)

    Kucinski, M.Y.; Okano, V.

    1993-01-01

    The relaxed states of tokamak plasmas are studied. It is assumed that the plasma relaxes to a quasi-steady state which is characterized by a minimum entropy production rate, compatible with a number of prescribed conditions and pressure balance. A poloidal current arises naturally due to the anisotropic resistivity. The minimum entropy production theory is applied, assuming the pressure equilibrium as fundamental constraint on the final state. (L.C.J.A.)

  15. Negative magnetic relaxation in superconductors

    Directory of Open Access Journals (Sweden)

    Krasnoperov E.P.

    2013-01-01

    Full Text Available It was observed that the trapped magnetic moment of HTS tablets or annuli increases in time (negative relaxation if they are not completely magnetized by a pulsed magnetic field. It is shown, in the framework of the Bean critical-state model, that the radial temperature gradient appearing in tablets or annuli during a pulsed field magnetization can explain the negative magnetic relaxation in the superconductor.

  16. Relaxation effects in ferrous complexes

    International Nuclear Information System (INIS)

    Nicolini, C.; Mathieu, J.P.; Chappert, J.

    1976-01-01

    The slow relaxation mechanism of the Fe 2+ ion in the tri-fluorinated TF(acac) and hexafluorinated HF(acac) complexes of Fe(II) acetylacetonate was investigated. The 300K and 77K Moessbauer spectra for TF(acac) consist in a slightly asymmetric quadrupole doublet. On the contrary, at 4.2K the higher energy line is strongly widened; that is typical of a slowing down in the electron relaxation frequency [fr

  17. Alternative Sigma Factors SigF, SigE, and SigG Are Essential for Sporulation in Clostridium botulinum ATCC 3502

    OpenAIRE

    Kirk, David G.; Zhang, Zhen; Korkeala, Hannu; Lindström, Miia

    2014-01-01

    Clostridium botulinum produces heat-resistant endospores that may germinate and outgrow into neurotoxic cultures in foods. Sporulation is regulated by the transcription factor Spo0A and the alternative sigma factors SigF, SigE, SigG, and SigK in most spore formers studied to date. We constructed mutants of sigF, sigE, and sigG in C. botulinum ATCC 3502 and used quantitative reverse transcriptase PCR and electron microscopy to assess their expression of the sporulation pathway on transcription...

  18. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-12-05

    This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

  19. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    International Nuclear Information System (INIS)

    Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

    2008-01-01

    This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers

  20. Melatonin: Buffering the Immune System

    Directory of Open Access Journals (Sweden)

    Juan M. Guerrero

    2013-04-01

    Full Text Available Melatonin modulates a wide range of physiological functions with pleiotropic effects on the immune system. Despite the large number of reports implicating melatonin as an immunomodulatory compound, it still remains unclear how melatonin regulates immunity. While some authors argue that melatonin is an immunostimulant, many studies have also described anti-inflammatory properties. The data reviewed in this paper support the idea of melatonin as an immune buffer, acting as a stimulant under basal or immunosuppressive conditions or as an anti-inflammatory compound in the presence of exacerbated immune responses, such as acute inflammation. The clinical relevance of the multiple functions of melatonin under different immune conditions, such as infection, autoimmunity, vaccination and immunosenescence, is also reviewed.

  1. Melatonin: Buffering the Immune System

    Science.gov (United States)

    Carrillo-Vico, Antonio; Lardone, Patricia J.; Álvarez-Sánchez, Nuria; Rodríguez-Rodríguez, Ana; Guerrero, Juan M.

    2013-01-01

    Melatonin modulates a wide range of physiological functions with pleiotropic effects on the immune system. Despite the large number of reports implicating melatonin as an immunomodulatory compound, it still remains unclear how melatonin regulates immunity. While some authors argue that melatonin is an immunostimulant, many studies have also described anti-inflammatory properties. The data reviewed in this paper support the idea of melatonin as an immune buffer, acting as a stimulant under basal or immunosuppressive conditions or as an anti-inflammatory compound in the presence of exacerbated immune responses, such as acute inflammation. The clinical relevance of the multiple functions of melatonin under different immune conditions, such as infection, autoimmunity, vaccination and immunosenescence, is also reviewed. PMID:23609496

  2. Modelling of buffer material behaviour

    International Nuclear Information System (INIS)

    Boergesson, L.

    1988-12-01

    Some material models of smectite rich buffer material suited for nuclear waste isolation are accounted for in the report. The application of these models in finite element calculations of some scenarios and performance are also shown. The rock shear scenario has been closely studied with comparisons between calculated and measured results. Sensitivity analyses of the effect of changing the density of the clay and the rate of shear have been performed as well as one calculation using a hollow steel cylinder. Material models and finite element calculations of canister settlement, thermomechanical effects and swelling are also accounted for. The report shows the present state of the work to establish material models and calculation tools which can be used at the final design of the repository. (31 illustrations)

  3. Signature-based store checking buffer

    Science.gov (United States)

    Sridharan, Vilas; Gurumurthi, Sudhanva

    2015-06-02

    A system and method for optimizing redundant output verification, are provided. A hardware-based store fingerprint buffer receives multiple instances of output from multiple instances of computation. The store fingerprint buffer generates a signature from the content included in the multiple instances of output. When a barrier is reached, the store fingerprint buffer uses the signature to verify the content is error-free.

  4. SODR Memory Control Buffer Control ASIC

    Science.gov (United States)

    Hodson, Robert F.

    1994-01-01

    The Spacecraft Optical Disk Recorder (SODR) is a state of the art mass storage system for future NASA missions requiring high transmission rates and a large capacity storage system. This report covers the design and development of an SODR memory buffer control applications specific integrated circuit (ASIC). The memory buffer control ASIC has two primary functions: (1) buffering data to prevent loss of data during disk access times, (2) converting data formats from a high performance parallel interface format to a small computer systems interface format. Ten 144 p in, 50 MHz CMOS ASIC's were designed, fabricated and tested to implement the memory buffer control function.

  5. Temperature buffer test. Dismantling operation

    Energy Technology Data Exchange (ETDEWEB)

    Aakesson, Mattias [Clay Technology AB, Lund (Sweden)

    2010-12-15

    The Temperature Buffer Test (TBT) is a joint project between SKB/ANDRA and supported by ENRESA (modelling) and DBE (instrumentation), which aims at improving the understanding and to model the thermo-hydro-mechanical behavior of buffers made of swelling clay submitted to high temperatures (over 100 deg C) during the water saturation process. The test has been carried out in a KBS-3 deposition hole at Aespoe HRL. It was installed during the spring of 2003. Two heaters (3 m long, 0.6 m diameter) and two buffer arrangements have been investigated: the lower heater was surrounded by bentonite in the usual way, whereas the upper heater was surrounded by a ring of sand. The test was dismantled and sampled during a period from the end of October 2009 to the end of April 2010, and this report describes this operation. Different types of samples have been obtained during this operation. A large number of diameter 50 mm bentonite cores have been taken for analysis of water content and density. Large pieces, so-called big sectors, have been taken for hydro-mechanical and chemical characterizations. Finally, there has been an interest to obtain different types of interface samples in which bentonite were in contact with sand, iron or concrete. One goal has been to investigate the retrievability of the upper heater, given the possibility to remove the surrounding sand shield, and a retrieval test has therefore been performed. The sand in the shield was first removed with an industrial vacuum cleaner after loosening the material through mechanical means (with hammer drill and core machine). A front loader was subsequently used for applying a sufficient lifting force to release the heater from the bentonite underneath. The experiment has been documented in different aspects: measurements of the coordinate (height or radius) of different interfaces (between bentonite blocks and between bentonite and sand); verification of sensor positions and retrieval of sensors for subsequent

  6. Temperature buffer test. Dismantling operation

    International Nuclear Information System (INIS)

    Aakesson, Mattias

    2010-12-01

    The Temperature Buffer Test (TBT) is a joint project between SKB/ANDRA and supported by ENRESA (modelling) and DBE (instrumentation), which aims at improving the understanding and to model the thermo-hydro-mechanical behavior of buffers made of swelling clay submitted to high temperatures (over 100 deg C) during the water saturation process. The test has been carried out in a KBS-3 deposition hole at Aespoe HRL. It was installed during the spring of 2003. Two heaters (3 m long, 0.6 m diameter) and two buffer arrangements have been investigated: the lower heater was surrounded by bentonite in the usual way, whereas the upper heater was surrounded by a ring of sand. The test was dismantled and sampled during a period from the end of October 2009 to the end of April 2010, and this report describes this operation. Different types of samples have been obtained during this operation. A large number of diameter 50 mm bentonite cores have been taken for analysis of water content and density. Large pieces, so-called big sectors, have been taken for hydro-mechanical and chemical characterizations. Finally, there has been an interest to obtain different types of interface samples in which bentonite were in contact with sand, iron or concrete. One goal has been to investigate the retrievability of the upper heater, given the possibility to remove the surrounding sand shield, and a retrieval test has therefore been performed. The sand in the shield was first removed with an industrial vacuum cleaner after loosening the material through mechanical means (with hammer drill and core machine). A front loader was subsequently used for applying a sufficient lifting force to release the heater from the bentonite underneath. The experiment has been documented in different aspects: measurements of the coordinate (height or radius) of different interfaces (between bentonite blocks and between bentonite and sand); verification of sensor positions and retrieval of sensors for subsequent

  7. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

    Science.gov (United States)

    England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.

  8. Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain

    International Nuclear Information System (INIS)

    Peng Xihong; Tang Fu; Logan, Paul

    2011-01-01

    Strain modulated electronic properties of Si/Ge core-shell nanowires along the [110] direction were reported, on the basis of first principles density-functional theory calculations. In particular, the energy dispersion relationship of the conduction/valence band was explored in detail. At the Γ point, the energy levels of both bands are significantly altered by applied uniaxial strain, which results in an evident change of the band gap. In contrast, for the K vectors far away from Γ, the variation of the conduction/valence band with strain is much reduced. In addition, with a sufficient tensile strain (∼1%), the valence band edge shifts away from Γ, which indicates that the band gap of the Si/Ge core-shell nanowires experiences a transition from direct to indirect. Our studies further showed that effective masses of charge carriers can also be tuned using the external uniaxial strain. The effective mass of the hole increases dramatically with tensile strain, while strain shows a minimal effect on tuning the effective mass of the electron. Finally, the relation between strain and the conduction/valence band edge is discussed thoroughly in terms of site-projected wavefunction characters.

  9. 21 CFR 520.1696a - Buffered penicillin powder, penicillin powder with buffered aqueous diluent.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Buffered penicillin powder, penicillin powder with... FORM NEW ANIMAL DRUGS § 520.1696a Buffered penicillin powder, penicillin powder with buffered aqueous diluent. (a) Specifications. When reconstituted, each milliliter contains penicillin G procaine equivalent...

  10. THE BUFFER CAPACITY OF AIRWAY EPITHELIAL SECRETIONS

    Directory of Open Access Journals (Sweden)

    Dusik eKim

    2014-06-01

    Full Text Available The pH of airway epithelial secretions influences bacterial killing and mucus properties and is reduced by acidic pollutants, gastric reflux, and respiratory diseases such as cystic fibrosis (CF. The effect of acute acid loads depends on buffer capacity, however the buffering of airway secretions has not been well characterized. In this work we develop a method for titrating micro-scale (30 µl volumes and use it to study fluid secreted by the human airway epithelial cell line Calu-3, a widely used model for submucosal gland serous cells. Microtitration curves revealed that HCO3- is the major buffer. Peak buffer capacity (β increased from 17 to 28 mM/pH during forskolin stimulation, and was reduced by >50% in fluid secreted by cystic fibrosis transmembrane conductance regulator (CFTR-deficient Calu-3 monolayers, confirming an important role of CFTR in HCO3- secretion. Back-titration with NaOH revealed non-volatile buffer capacity due to proteins synthesized and released by the epithelial cells. Lysozyme and mucin concentrations were too low to buffer Calu-3 fluid significantly, however model titrations of porcine gastric mucins at concentrations near the sol-gel transition suggest that mucins may contribute to the buffer capacity of ASL in vivo. We conclude that CFTR-dependent HCO3- secretion and epithelially-derived proteins are the predominant buffers in Calu-3 secretions.

  11. Shock buffer for nuclear control assembly

    International Nuclear Information System (INIS)

    Bevilacqua, F.

    1977-01-01

    A shock buffer is provided for the gradual deceleration of a rapidly descending control element assembly in a nuclear reactor. The interactive buffer components are associated respectively with the movable control element assembly and part of the upper guide structure independent of and spaced from the fuel assemblies of the reactor

  12. Buffer sizing for multi-hop networks

    KAUST Repository

    Shihada, Basem

    2014-01-28

    A cumulative buffer may be defined for an interference domain in a wireless mesh network and distributed among nodes in the network to maintain or improve capacity utilization of network resources in the interference domain without increasing packet queuing delay times. When an interference domain having communications links sharing resources in a network is identified, a cumulative buffer size is calculated. The cumulative buffer may be distributed among buffers in each node of the interference domain according to a simple division or according to a cost function taking into account a distance of the communications link from the source and destination. The network may be monitored and the cumulative buffer size recalculated and redistributed when the network conditions change.

  13. Optimization of protein buffer cocktails using Thermofluor.

    Science.gov (United States)

    Reinhard, Linda; Mayerhofer, Hubert; Geerlof, Arie; Mueller-Dieckmann, Jochen; Weiss, Manfred S

    2013-02-01

    The stability and homogeneity of a protein sample is strongly influenced by the composition of the buffer that the protein is in. A quick and easy approach to identify a buffer composition which increases the stability and possibly the conformational homogeneity of a protein sample is the fluorescence-based thermal-shift assay (Thermofluor). Here, a novel 96-condition screen for Thermofluor experiments is presented which consists of buffer and additive parts. The buffer screen comprises 23 different buffers and the additive screen includes small-molecule additives such as salts and nucleotide analogues. The utilization of small-molecule components which increase the thermal stability of a protein sample frequently results in a protein preparation of higher quality and quantity and ultimately also increases the chances of the protein crystallizing.

  14. Peeling mode relaxation ELM model

    International Nuclear Information System (INIS)

    Gimblett, C. G.

    2006-01-01

    This paper discusses an approach to modelling Edge Localised Modes (ELMs) in which toroidal peeling modes are envisaged to initiate a constrained relaxation of the tokamak outer region plasma. Relaxation produces both a flattened edge current profile (which tends to further destabilise a peeling mode), and a plasma-vacuum negative current sheet which has a counteracting stabilising influence; the balance that is struck between these two effects determines the radial extent (rE) of the ELM relaxed region. The model is sensitive to the precise position of the mode rational surfaces to the plasma surface and hence there is a 'deterministic scatter' in the results that has an accord with experimental data. The toroidal peeling stability criterion involves the edge pressure, and using this in conjunction with predictions of rE allows us to evaluate the ELM energy losses and compare with experiment. Predictions of trends with the edge safety factor and collisionality are also made

  15. Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nano wires for Biochemical Sensors

    International Nuclear Information System (INIS)

    Chang, K.; Chen, C.; Kuo, P.; Chen, Y.; Chang, T.; Lai, C.; Whang, A. J.; Lai, Y.; Chen, H.; Hsieh, I.

    2014-01-01

    Nano wires are widely used as highly sensitive sensors for electrical detection of biological and chemical species. Modifying the band structure of strained-Si metal-oxide-semiconductor field-effect transistors by applying the in-plane tensile strain reportedly improves electron and hole mobility. The oxidation-induced Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and substantially increases hole mobility. However, oxidation increases the number of surface states, resulting in hole mobility degradation. In this work, 3-aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent. The hydroxyl molecule on the oxide surface was replaced by the methoxy groups of the APTMS molecule. We proposed a surface plasma treatment to improve the electrical properties of SiGe nano wires. Fluorine plasma treatment can result in enhanced rates of thermal oxidation and speed up the formation of a self-passivation oxide layer. Like a capping oxide layer, the self-passivation oxide layer reduces the rate of follow-up oxidation. Pre oxidation treatment also improved the sensitivity of SiGe nano wires because the Si-F binding was held at a more stable interface state compared to bare nano wire on the SiGe surface. Additionally, the sensitivity can be further improved by either the N 2 plasma posttreatment or the low-temperature post annealing due to the suppression of out diffusion of Ge and F atoms from the SiGe nano wire surface.

  16. Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers

    NARCIS (Netherlands)

    Bruce, S.P.O.; Vandamme, L.K.J.; Rydberg, A.

    1999-01-01

    Transimpedance amplifiers have been used for direct study of current noise in silicon germanium (SiGe) heterojunction bipolar transistors (HBT's) at different biasing conditions. This has facilitated a wider range of resistances in the measurement circuit around the transistor than is possible when

  17. COMBINATIONS OF BUFFER-STOCKS AND BUFFER-FUNDS FOR WOOL PRICE STABILISATION IN AUSTRALIA

    OpenAIRE

    Moir, Brian; Piggott, Roley R.

    1991-01-01

    In this paper a preliminary analysis is presented of a combined buffer-fund and buffer-stock as an alternative to a pure buffer-fund or a pure buffer stock for stabilising wool prices. The alternatives analysed are designed so that each provides the same prices to producers as did the Reserve Price Scheme over the period of analysis. Least-cost combinations of policy instruments are derived. The results show that there is considerable potential for cost savings to be made by combining buffer-...

  18. Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

    Science.gov (United States)

    Rozé, Fabien; Gourhant, Olivier; Blanquet, Elisabeth; Bertin, François; Juhel, Marc; Abbate, Francesco; Pribat, Clément; Duru, Romain

    2017-06-01

    The fabrication of ultrathin compressively strained SiGe-On-Insulator layers by the condensation technique is likely a key milestone towards low-power and high performances FD-SOI logic devices. However, the SiGe condensation technique still requires challenges to be solved for an optimized use in an industrial environment. SiGe oxidation kinetics, upon which the condensation technique is founded, has still not reached a consensus in spite of various studies which gave insights into the matter. This paper aims to bridge the gaps between these studies by covering various oxidation processes relevant to today's technological needs with a new and quantitative analysis methodology. We thus address oxidation kinetics of SiGe with three Ge concentrations (0%, 10%, and 30%) by means of dry rapid thermal oxidation, in-situ steam generation oxidation, and dry furnace oxidation. Oxide thicknesses in the 50 Å to 150 Å range grown with oxidation temperatures between 850 and 1100 °C were targeted. The present work shows first that for all investigated processes, oxidation follows a parabolic regime even for thin oxides, which indicates a diffusion-limited oxidation regime. We also observe that, for all investigated processes, the SiGe oxidation rate is systematically higher than that of Si. The amplitude of the variation of oxidation kinetics of SiGe with respect to Si is found to be strongly dependent on the process type. Second, a new quantitative analysis methodology of oxidation kinetics is introduced. This methodology allows us to highlight the dependence of oxidation kinetics on the Ge concentration at the oxidation interface, which is modulated by the pile-up mechanism. Our results show that the oxidation rate increases with the Ge concentration at the oxidation interface.

  19. Buffer mass test - Site documentation

    International Nuclear Information System (INIS)

    Pusch, R.

    1983-10-01

    The purpose of this report is to compile test site data that are assumed to be of importance for the interpretation of the Buffer Mass Test. Since this test mainly concerns water uptake and migration processes in the integrated rock/backfill system and the development of temperature fields in this system, the work has been focused on the constitution and hydrology of the rock. The major constitutional rock feature of interest for the BMT is the frequency and distribution of joints and fractures. The development of models for water uptake into the highly compacted bentonite in the heater holes requires a very detailed fracture survey. The present investigation shows that two of the holes (no. 1 and 2) are located in richly fractured rock, while the others are located in fracture-poor to moderately fractured rock. The hydrological conditions of the rock in the BMT area are characterized by water pressures of as much as 100 m water head at a few meters distance from the test site. The average hydraulic conductivity of the rock that confines the BMT tunnel has been estimated at about 10 -10 m/s by Lawrence Laboratory. The actual distribution of the water that enters the tunnel has been estimated by observing the successive moistening after having switched off the ventilation, and this has offered basis of predicting the rate and uniformity of the water uptake in the tunnel backfill. As to the heater holes the detailed fracture patterns and various inflow measurements have yielded a similar basis. The report also gives major data on the rock temperature, gas conditions, mineralogy, rock mechanics, and groundwater chemistry for BMT purposes. (author)

  20. Temperature buffer test. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Aakesson, Mattias [Clay Technology AB, Lund (Sweden)

    2012-04-15

    The Temperature Buffer Test (TBT) is a joint project between SKB/ANDRA and supported by ENRESA (modelling) and DBE (instrumentation), which aims at improving the understanding and to model the thermo-hydro-mechanical behavior of buffers made of swelling clay submitted to high temperatures (over 100 deg C) during the water saturation process. The test has been carried out in a KBS-3 deposition hole at Aspo HRL. It was installed during the spring of 2003. Two steel heaters (3 m long, 0.6 m diameter) and two buffer arrangements have been investigated: the lower heater was surrounded by rings of compacted Wyoming bentonite only, whereas the upper heater was surrounded by a composite barrier, with a sand shield between the heater and the bentonite. The test was dismantled and sampled during the winter of 2009/2010. This report is the final report and a summary of all work performed within the TBT project. The design and the installation of the different components are summarized: the depositions hole, the heating system, the bentonite blocks with emphasis on the initial density and water content in these, the filling of slots with sand or pellets, the retaining construction with the plug, lid and nine anchor cables, the artificial saturation system, and finally the instrumentation. An overview of the operational conditions is presented: the power output from heaters, which was 1,500 W (and also 1,600 W) from each heater during the first {approx}1,700 days, and then changed to 1,000 and 2,000 W, for the upper and lower heater respectively, during the last {approx}600 days. From the start, the bentonite was hydrated with a groundwater from a nearby bore-hole, but this groundwater was replaced with de-ionized water from day {approx}1,500, due to the high flow resistance of the injections points in the filter, which implied that a high filter pressure couldn't be sustained. The sand shield around the upper heater was hydrated from day {approx}1,500 to day {approx}1

  1. Temperature buffer test. Final report

    International Nuclear Information System (INIS)

    Aakesson, Mattias

    2012-04-01

    The Temperature Buffer Test (TBT) is a joint project between SKB/ANDRA and supported by ENRESA (modelling) and DBE (instrumentation), which aims at improving the understanding and to model the thermo-hydro-mechanical behavior of buffers made of swelling clay submitted to high temperatures (over 100 deg C) during the water saturation process. The test has been carried out in a KBS-3 deposition hole at Aspo HRL. It was installed during the spring of 2003. Two steel heaters (3 m long, 0.6 m diameter) and two buffer arrangements have been investigated: the lower heater was surrounded by rings of compacted Wyoming bentonite only, whereas the upper heater was surrounded by a composite barrier, with a sand shield between the heater and the bentonite. The test was dismantled and sampled during the winter of 2009/2010. This report is the final report and a summary of all work performed within the TBT project. The design and the installation of the different components are summarized: the depositions hole, the heating system, the bentonite blocks with emphasis on the initial density and water content in these, the filling of slots with sand or pellets, the retaining construction with the plug, lid and nine anchor cables, the artificial saturation system, and finally the instrumentation. An overview of the operational conditions is presented: the power output from heaters, which was 1,500 W (and also 1,600 W) from each heater during the first ∼1,700 days, and then changed to 1,000 and 2,000 W, for the upper and lower heater respectively, during the last ∼600 days. From the start, the bentonite was hydrated with a groundwater from a nearby bore-hole, but this groundwater was replaced with de-ionized water from day ∼1,500, due to the high flow resistance of the injections points in the filter, which implied that a high filter pressure couldn't be sustained. The sand shield around the upper heater was hydrated from day ∼1,500 to day ∼1,800. The sensors data concerning

  2. Dendrochronology of Strain-Relaxed Islands

    International Nuclear Information System (INIS)

    Merdzhanova, T.; Kiravittaya, S.; Rastelli, A.; Stoffel, M.; Denker, U.; Schmidt, O.G.

    2006-01-01

    We report on the observation and study of tree-ring structures below dislocated SiGe islands (superdomes) grown on Si(001) substrates. Analogous to the study of tree rings (dendrochronology), these footprints enable us to gain unambiguous information on the growth and evolution of superdomes and their neighboring islands. The temperature dependence of the critical volume for dislocation introduction is measured and related to the composition of the islands. We show clearly that island coalescence is the dominant pathway towards dislocation nucleation at low temperatures, while at higher temperatures anomalous coarsening is effective and leads to the formation of a depletion region around superdomes

  3. Dendrochronology of strain-relaxed islands.

    Science.gov (United States)

    Merdzhanova, T; Kiravittaya, S; Rastelli, A; Stoffel, M; Denker, U; Schmidt, O G

    2006-06-09

    We report on the observation and study of tree-ring structures below dislocated SiGe islands (superdomes) grown on Si(001) substrates. Analogous to the study of tree rings (dendrochronology), these footprints enable us to gain unambiguous information on the growth and evolution of superdomes and their neighboring islands. The temperature dependence of the critical volume for dislocation introduction is measured and related to the composition of the islands. We show clearly that island coalescence is the dominant pathway towards dislocation nucleation at low temperatures, while at higher temperatures anomalous coarsening is effective and leads to the formation of a depletion region around superdomes.

  4. Dynamic mechanical properties of buffer material

    International Nuclear Information System (INIS)

    Takaji, Kazuhiko; Taniguchi, Wataru

    1999-11-01

    The buffer material is expected to maintain its low water permeability, self-sealing properties, radionuclides adsorption and retardation properties, thermal conductivity, chemical buffering properties, overpack supporting properties, stress buffering properties, etc. over a long period of time. Natural clay is mentioned as a material that can relatively satisfy above. Among the kinds of natural clay, bentonite when compacted is superior because (i) it has exceptionally low water permeability and properties to control the movement of water in buffer, (ii) it fills void spaces in the buffer and fractures in the host rock as it swells upon water uptake, (iii) it has the ability to exchange cations and to adsorb cationic radioelements. In order to confirm these functions for the purpose of safety assessment, it is necessary to evaluate buffer properties through laboratory tests and engineering-scale tests, and to make assessments based on the ranges in the data obtained. This report describes the procedures, test conditions, results and examinations on the buffer material of dynamic triaxial tests, measurement of elastic wave velocity and liquefaction tests that aim at getting hold of dynamic mechanical properties. We can get hold of dependency on the shearing strain of the shearing modulus and hysteresis damping constant, the application for the mechanical model etc. by dynamic triaxial tests, the acceptability of maximum shearing modulus obtained from dynamic triaxial tests etc. by measurement of elastic wave velocity and dynamic strength caused by cyclic stress etc. by liquefaction tests. (author)

  5. Buffer-regulated biocorrosion of pure magnesium.

    Science.gov (United States)

    Kirkland, Nicholas T; Waterman, Jay; Birbilis, Nick; Dias, George; Woodfield, Tim B F; Hartshorn, Richard M; Staiger, Mark P

    2012-02-01

    Magnesium (Mg) alloys are being actively investigated as potential load-bearing orthopaedic implant materials due to their biodegradability in vivo. With Mg biomaterials at an early stage in their development, the screening of alloy compositions for their biodegradation rate, and hence biocompatibility, is reliant on cost-effective in vitro methods. The use of a buffer to control pH during in vitro biodegradation is recognised as critically important as this seeks to mimic pH control as it occurs naturally in vivo. The two different types of in vitro buffer system available are based on either (i) zwitterionic organic compounds or (ii) carbonate buffers within a partial-CO(2) atmosphere. This study investigated the influence of the buffering system itself on the in vitro corrosion of Mg. It was found that the less realistic zwitterion-based buffer did not form the same corrosion layers as the carbonate buffer, and was potentially affecting the behaviour of the hydrated oxide layer that forms on Mg in all aqueous environments. Consequently it was recommended that Mg in vitro experiments use the more biorealistic carbonate buffering system when possible.

  6. Relaxation properties in classical diamagnetism

    Science.gov (United States)

    Carati, A.; Benfenati, F.; Galgani, L.

    2011-06-01

    It is an old result of Bohr that, according to classical statistical mechanics, at equilibrium a system of electrons in a static magnetic field presents no magnetization. Thus a magnetization can occur only in an out of equilibrium state, such as that produced through the Foucault currents when a magnetic field is switched on. It was suggested by Bohr that, after the establishment of such a nonequilibrium state, the system of electrons would quickly relax back to equilibrium. In the present paper, we study numerically the relaxation to equilibrium in a modified Bohr model, which is mathematically equivalent to a billiard with obstacles, immersed in a magnetic field that is adiabatically switched on. We show that it is not guaranteed that equilibrium is attained within the typical time scales of microscopic dynamics. Depending on the values of the parameters, one has a relaxation either to equilibrium or to a diamagnetic (presumably metastable) state. The analogy with the relaxation properties in the Fermi Pasta Ulam problem is also pointed out.

  7. Onsager relaxation of toroidal plasmas

    International Nuclear Information System (INIS)

    Samain, A.; Nguyen, F.

    1997-01-01

    The slow relaxation of isolated toroidal plasmas towards their thermodynamical equilibrium is studied in an Onsager framework based on the entropy metric. The basic tool is a variational principle, equivalent to the kinetic equation, involving the profiles of density, temperature, electric potential, electric current. New minimization procedures are proposed to obtain entropy and entropy production rate functionals. (author)

  8. Anisotropic spin relaxation in graphene

    NARCIS (Netherlands)

    Tombros, N.; Tanabe, S.; Veligura, A.; Jozsa, C.; Popinciuc, M.; Jonkman, H. T.; van Wees, B. J.

    2008-01-01

    Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular

  9. Stochastic and Chaotic Relaxation Oscillations

    NARCIS (Netherlands)

    Grasman, J.; Roerdink, J.B.T.M.

    1988-01-01

    For relaxation oscillators stochastic and chaotic dynamics are investigated. The effect of random perturbations upon the period is computed. For an extended system with additional state variables chaotic behavior can be expected. As an example, the Van der Pol oscillator is changed into a

  10. Tensions relaxation in Zircaloy-4

    International Nuclear Information System (INIS)

    Cuniberti, A.M.; Picasso, A.C.

    1990-01-01

    Traction and stress relaxation studies were performed on polycrystalline Zry-4 at room temperature. The effect of loading velocity on the plastic behaviour of the material is discussed, analysing log σ vs. log dε/dt at different deformation levels. The contribution introduced by the testing machine was taken into account in data evaluation. (Author). 7 refs., 3 figs., 3 tabs

  11. Buffer protection in the installation phase

    International Nuclear Information System (INIS)

    Wimelius, Hans; Pusch, Roland

    2008-12-01

    The research and development of the design and construction of the SKB's repository for final disposal of spent reactor fuel is conducted along several paths ('lines'). Issues concerning the bedrock are dealt with in the 'rock line' and those related to buffer and backfill in deposition holes and tunnels are considered in the 'buffer line' and 'backfill line', respectively. These lines also deal with sub-activities that are coupled to several other lines. One of them includes development of techniques for protecting buffer blocks from moisture and water in the installation phase. Techniques and methods for placement and removal of the 'buffer protection sheet' are dealt with in the 'buffer line'. The removal is, however, considered as being part of the backfilling sequence. Since the performance of the sheet is of fundamental importance to the placement and function of the buffer it deserves particular attention. Thus, the removal of the rubber sheet that serves to protect the buffer blocks in the installation phase may be difficult and can cause significant problems that may require retrieval of already placed canister, buffer and backfill. These matters are in focus in the present report. Arrangements for protecting already placed buffer blocks from moist air and water have been tested in earlier large-scale experiments, i.e. the Prototype Repository project at Aespoe but the experience from them has called for more effective protection of the clay blocks as described in the present report. Focus is on the construction of foundation components at the bottom of the deposition holes required for establishing a tight seal between rock and buffer blocks, and on the protection sheet and arrangements for limiting water pressure on it. Special attention is paid to the drainage of the space between rock and protection sheet that is necessary for avoiding failure of the sheet and to systems for achieving this and for providing alarm signals if the allowed pressure is

  12. Buffer protection in the installation phase

    Energy Technology Data Exchange (ETDEWEB)

    Wimelius, Hans (Swedish Nuclear Fuel and Waste Management Co., Stockholm (Sweden)); Pusch, Roland (Geodevelopment International AB, Lund (Sweden))

    2008-12-15

    The research and development of the design and construction of the SKB's repository for final disposal of spent reactor fuel is conducted along several paths ('lines'). Issues concerning the bedrock are dealt with in the 'rock line' and those related to buffer and backfill in deposition holes and tunnels are considered in the 'buffer line' and 'backfill line', respectively. These lines also deal with sub-activities that are coupled to several other lines. One of them includes development of techniques for protecting buffer blocks from moisture and water in the installation phase. Techniques and methods for placement and removal of the 'buffer protection sheet' are dealt with in the 'buffer line'. The removal is, however, considered as being part of the backfilling sequence. Since the performance of the sheet is of fundamental importance to the placement and function of the buffer it deserves particular attention. Thus, the removal of the rubber sheet that serves to protect the buffer blocks in the installation phase may be difficult and can cause significant problems that may require retrieval of already placed canister, buffer and backfill. These matters are in focus in the present report. Arrangements for protecting already placed buffer blocks from moist air and water have been tested in earlier large-scale experiments, i.e. the Prototype Repository project at Aespoe but the experience from them has called for more effective protection of the clay blocks as described in the present report. Focus is on the construction of foundation components at the bottom of the deposition holes required for establishing a tight seal between rock and buffer blocks, and on the protection sheet and arrangements for limiting water pressure on it. Special attention is paid to the drainage of the space between rock and protection sheet that is necessary for avoiding failure of the sheet and to systems for achieving

  13. Surface Water Protection by Productive Buffers

    DEFF Research Database (Denmark)

    Christen, Benjamin

    Vegetated riparian buffer zones are a widely recommended best management practice in agriculture for protecting surface and coastal waters from diffuse nutrient pollution. On the background of the EU funded research project NitroEurope (NEU; www.NitroEurope.eu), this study concentrates...... on the mitigation of nitrogen pollution in surface and groundwater, using riparian buffer zones for biomass production. The objectives are to map suitable areas for buffer implementation across the six NEU study landscapes, model tentative N-loss mitigation, calculate biomass production potential and economic...... designed for local conditions could be a way of protecting water quality attractive to many stakeholders....

  14. Sleep, Stress & Relaxation: Rejuvenate Body & Mind

    Science.gov (United States)

    Sleep, Stress & Relaxation: Rejuvenate Body & Mind; Relieve Stress; best ways to relieve stress; best way to relieve stress; different ways to relieve stress; does smoking relieve stress; does tobacco relieve stress; how can I relieve stress; how can you relieve stress; how do I relieve stress; reduce stress; does smoking reduce stress; how can I reduce stress; how to reduce stress; reduce stress; reduce stress levels; reducing stress; smoking reduce stress; smoking reduces stress; stress reducing techniques; techniques to reduce stress; stress relief; best stress relief; natural stress relief; need stress relief; relief for stress; relief from stress; relief of stress; smoking and stress relief; smoking for stress relief; smoking stress relief; deal with stress; dealing with stress; dealing with anger; dealing with stress; different ways of dealing with stress; help dealing with stress; how to deal with anger; how to deal with stress; how to deal with stress when quitting smoking; stress management; free stress management; how can you manage stress; how do you manage stress; how to manage stress; manage stress; management of stress; management stress; managing stress; strategies for managing stress; coping with stress; cope with stress; copeing with stress; coping and stress; coping skills for stress; coping strategies for stress; coping strategies with stress; coping strategy for stress; coping with stress; coping with stress and anxiety; emotional health; emotional health; emotional health article; emotional health articles; deep relaxation; deep breathing relaxation techniques; deep muscle relaxation; deep relaxation; deep relaxation meditation; deep relaxation technique; deep relaxation techniques; meditation exercises; mindful exercises; mindful meditation exercises; online relaxation exercises; relaxation breathing exercises; relaxation exercise; relaxation exercises; stress relaxation; methods of relaxation for stress; relax stress; relax techniques stress

  15. Buffer sizing for multi-hop networks

    KAUST Repository

    Shihada, Basem; Jamshaid, Kamran

    2014-01-01

    domain according to a simple division or according to a cost function taking into account a distance of the communications link from the source and destination. The network may be monitored and the cumulative buffer size recalculated and redistributed

  16. Moisture Buffer Value of Building Materials

    DEFF Research Database (Denmark)

    Rode, Carsten; Peuhkuri, Ruut; Time, Berit

    2007-01-01

    When building materials are in contact with indoor air they have some effect to moderate the variations of indoor humidity in occupied buildings. But so far there has been a lack of a standardized quantity to characterize the moisture buffering capability of materials. It has been the objective o...... is a test protocol which expresses how materials should be tested for determination of their Moisture Buffer Value. Finally, the paper presents some of the results of a Round Robin Test on various typical building materials that has been carried out in the project....... of a recent Nordic project to define such a quantity, and to declare it in the form of a NORDTEST method. The Moisture Buffer Value is the figure that has been developed in the project as a way to appraise the moisture buffer effect of materials, and the value is described in the paper. Also explained...

  17. Liquid growth hormone: preservatives and buffers

    DEFF Research Database (Denmark)

    Kappelgaard, Anne-Marie; Anders, Bojesen; Skydsgaard, Karen

    2004-01-01

    injection are dependent on the preservative used in the formulation and the concentration of GH. Injection pain may also be related to the buffer substance and injection volume. A liquid formulation of GH, Norditropi SimpleXx, has been developed that dispenses with the need for reconstitution before...... solution. More pain was also reported following large volume injections and following injections with solutions containing high protein concentrations. In summary, optimization of the preservative and buffer content of a liquid GH formulation may reduce injection pain and lead to improved patient...... administration. The formulation uses phenol (3 mg/ml) as a preservative (to protect product from microbial degradation or contamination) and histidine as a buffer. Alternative preservatives used in other GH formulations include m-cresol (9 mg/ml) and benzyl alcohol (3-9 mg/ml). Buffering agents include citrate...

  18. Calculating Buffer Zones: A Guide for Applicators

    Science.gov (United States)

    Buffer zones provide distance between the application block (i.e., edge of the treated field) and bystanders, in order to control pesticide exposure risk from soil fumigants. Distance requirements may be reduced by credits such as tarps.

  19. Buffer Strips for Riparian Zone Management

    National Research Council Canada - National Science Library

    1991-01-01

    This study provides a review of technical literature concerning the width of riparian buffer strips needed to protect water quality and maintain other important values provided by riparian ecosystem...

  20. Lucas Heights buffer zone: plan of management

    International Nuclear Information System (INIS)

    1986-01-01

    This plan is being used by the Commission as a guide for its management of the Lucas Heights buffer zone, which is essentially a circular area having a 1-6 km radius around the HIFAR reactor. Aspects covered by this plan include past uses, current use, objectives for buffer zone land management, emergency evacuation, resource conservation, archaeology, fire, access, rehabilitation of disturbed areas, resource management and plan implementation

  1. Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires.

    Science.gov (United States)

    Das, Suvankar; Moitra, Amitava; Bhattacharya, Mishreyee; Dutta, Amlan

    2015-01-01

    The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on the nanowires. In addition, the thermally induced stress is perceived in the context of buckling instability. The analysis provides a trade-off between the geometrical and operational parameters of the nanostructures. The proposed methodology can be extended to other materials and structures and helps with the prediction of the conditions under which a nanowire-based device might possibly fail due to elastic instability.

  2. Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

    Science.gov (United States)

    Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

    2018-04-01

    The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

  3. Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

    International Nuclear Information System (INIS)

    Sun Ya-Bin; Li Xiao-Jin; Zhang Jin-Zhong; Shi Yan-Ling

    2017-01-01

    In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts: a link base region under a spacer oxide, an intrinsic transistor region under the emitter window, and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the small-signal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node, which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model. (paper)

  4. Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC, V8W 3P6 (Canada)

    2010-04-15

    The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72-hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC V8W 3P6 (Canada)

    2010-03-15

    Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three-zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Relaxation Techniques to Manage IBS Symptoms

    Science.gov (United States)

    ... for 15–20 seconds and then begin again. Progressive Muscle Relaxation This method of relaxation focuses on ... helpful, please consider supporting IFFGD with a small tax- deductible donation. Make Donation Adapted from IFFGD Publication # ...

  7. Relaxation and Distraction in Experimental Desensitization.

    Science.gov (United States)

    Weir, R. O.; Marshall, W. L.

    1980-01-01

    Compared experimental desensitization with a procedure that replaced relaxation with a distraction task and with an approach that combined both relaxation and distraction. Desensitization generally was more effective than the other two procedures. (Author)

  8. Relaxation as a Factor in Semantic Desensitization

    Science.gov (United States)

    Bechtel, James E.; McNamara, J. Regis

    1975-01-01

    Relaxation and semantic desensitization were used to alleviate the fear of phobic females. Results showed that semantic desensitization, alone or in combination with relaxation, failed to modify the evaluative meanings evoked by the feared object. (SE)

  9. Buffer regulation of calcium puff sequences

    International Nuclear Information System (INIS)

    Fraiman, Daniel; Dawson, Silvina Ponce

    2014-01-01

    Puffs are localized Ca 2+ signals that arise in oocytes in response to inositol 1,4,5-trisphosphate (IP 3 ). They are the result of the liberation of Ca 2+ from the endoplasmic reticulum through the coordinated opening of IP 3 receptor/channels clustered at a functional release site. The presence of buffers that trap Ca 2+ provides a mechanism that enriches the spatio–temporal dynamics of cytosolic calcium. The expression of different types of buffers along the cell's life provides a tool with which Ca 2+ signals and their responses can be modulated. In this paper we extend the stochastic model of a cluster of IP 3 R-Ca 2+ channels introduced previously to elucidate the effect of buffers on sequences of puffs at the same release site. We obtain analytically the probability laws of the interpuff time and of the number of channels that participate of the puffs. Furthermore, we show that under typical experimental conditions the effect of buffers can be accounted for in terms of a simple inhibiting function. Hence, by exploring different inhibiting functions we are able to study the effect of a variety of buffers on the puff size and interpuff time distributions. We find the somewhat counter-intuitive result that the addition of a fast Ca 2+ buffer can increase the average number of channels that participate of a puff. (paper)

  10. Buffer regulation of calcium puff sequences.

    Science.gov (United States)

    Fraiman, Daniel; Dawson, Silvina Ponce

    2014-02-01

    Puffs are localized Ca(2 +) signals that arise in oocytes in response to inositol 1,4,5-trisphosphate (IP3). They are the result of the liberation of Ca(2 +) from the endoplasmic reticulum through the coordinated opening of IP3 receptor/channels clustered at a functional release site. The presence of buffers that trap Ca(2 +) provides a mechanism that enriches the spatio-temporal dynamics of cytosolic calcium. The expression of different types of buffers along the cell's life provides a tool with which Ca(2 +) signals and their responses can be modulated. In this paper we extend the stochastic model of a cluster of IP3R-Ca(2 +) channels introduced previously to elucidate the effect of buffers on sequences of puffs at the same release site. We obtain analytically the probability laws of the interpuff time and of the number of channels that participate of the puffs. Furthermore, we show that under typical experimental conditions the effect of buffers can be accounted for in terms of a simple inhibiting function. Hence, by exploring different inhibiting functions we are able to study the effect of a variety of buffers on the puff size and interpuff time distributions. We find the somewhat counter-intuitive result that the addition of a fast Ca(2 +) buffer can increase the average number of channels that participate of a puff.

  11. Investigation of high mobility pseudomorphic SiGe p-channels in Si MOSFETS at low and high electric fields

    International Nuclear Information System (INIS)

    Palmer, Martin John

    2001-01-01

    Silicon Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) for high speed, high current applications are rapidly approaching the physical and financial limits of the technology. This opens opportunities for the incorporation of materials with intrinsically better transport characteristics. An alloy of silicon and germanium is one such material that is gaining much recognition as the active component of MOSFETs and as the secondary structures (such as the gate electrode). This work examines a batch of buried channel Si 0.64 Ge 0.36 p-MOSFETs, with a minimum effective length of 0.35 μm, under different bias conditions and at different temperatures. High current and transconductance enhancements are apparent at long gate lengths. The carrier mobility is up to a factor of 2.5 times that of silicon at room temperature and 7.5 times at 4 K. A clear trend of decreasing peak mobility with decreasing silicon cap thickness is evident. Simulations show that scattering caused by the roughness of the SiO 2 /Si interface dominates, rather than alloy scattering or Si/SiGe roughness, even for a buried channel. This scattering increases with the proximity of the carriers to the interface. An increase of interface trap density with decreasing cap thickness, demonstrates that segregated germanium exists some distance into the cap and interferes with the oxidation process. This will increase scattering through increased SiO 2 /Si roughness and increased trapped charge. The short channel, high field results are comparable or slightly worse than those of silicon due to lower saturation drift velocity. However, fitting to a drift-diffusion model shows an apparent increase in saturation velocity for short channels, especially at low temperatures. This effect correlates with the low field mobility and is greater for devices containing SiGe. This is an indication of velocity overshoot, which may enhance the performance of SiGe MOSFETs at deep submicron gate lengths. (author)

  12. Plasmon-mediated energy relaxation in graphene

    Energy Technology Data Exchange (ETDEWEB)

    Ferry, D. K. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Somphonsane, R. [Department of Physics, King Mongkut' s Institute of Technology, Ladkrabang, Bangkok 10520 (Thailand); Ramamoorthy, H.; Bird, J. P. [Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-1500 (United States)

    2015-12-28

    Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.

  13. Sulfur passivation for the formation of Si-terminated Al{sub 2}O{sub 3/}SiGe(0 0 1) interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, CA (United States); Tang, Kechao [Department of Materials Science and Engineering, Stanford University, CA (United States); Park, Sangwook; Kim, Hyonwoong [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Madisetti, Shailesh [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, CA (United States); Oktyabrsky, Serge [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES USA, Inc., Albany, NY (United States); Yoshida, Noami; Kachian, Jessica [Applied Materials, Inc., Santa Clara, CA (United States); Kummel, Andrew, E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States)

    2016-03-15

    Graphical abstract: - Highlights: • Effect of wet sulfur passivation on the electrical properties of Al{sub 2}O{sub 3}/SiGe(0 0 1) interfaces has been determined. • EOT of 2.1 nm has been achieved for ALD Al{sub 2}O{sub 3} deposited directly on SiGe(0 0 1) surfaces. • Sulfur passivation has been found to passivate the Al{sub 2}O{sub 3} interface with Si−O−Al bonds. • Sulfur passivation is found to significantly reduce the GeO{sub x} or Ge−O−Al content at the Al{sub 2}O{sub 3}/SiGe interface therefore improving the reliability. • Sulfur passivation extends the surface stability prior to oxide ALD to up to an hour with no dramatic change in D{sub it}, C{sub ox} or V{sub FB} of the resulting devices. - Abstract: Sulfur passivation is used to electrically and chemically passivate the silicon–germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al{sub 2}O{sub 3}). The electrical properties of the interfaces were examined by variable frequency capacitance–voltage (C–V) spectroscopy. Interface compositions were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The sulfur adsorbs to a large fraction of surface sites on the SiGe(0 0 1) surface, protecting the surface from deleterious surface reactions during processing. Sulfur passivation (a) improved the air stability of the cleaned surfaces prior to ALD, (b) increased the stability of the surface during high-temperature deposition, and (c) increased the Al{sub 2}O{sub 3} ALD nucleation density on SiGe, thereby lowering the leakage current. S passivation suppressed formation of Ge−O bonds at the interface, leaving the majority of the Al{sub 2}O{sub 3}–SiGe interface terminated with direct Si−O−Al bonding.

  14. Nonlinear Relaxation in Population Dynamics

    Science.gov (United States)

    Cirone, Markus A.; de Pasquale, Ferdinando; Spagnolo, Bernardo

    We analyze the nonlinear relaxation of a complex ecosystem composed of many interacting species. The ecological system is described by generalized Lotka-Volterra equations with a multiplicative noise. The transient dynamics is studied in the framework of the mean field theory and with random interaction between the species. We focus on the statistical properties of the asymptotic behaviour of the time integral of the ith population and on the distribution of the population and of the local field.

  15. Structural relaxation: low temperature properties

    International Nuclear Information System (INIS)

    Cruz, F. de la

    1984-01-01

    We discuss the changes in transport and superconducting properties of amorphous Zr 70 Cu 30 , induced by thermal relaxation. The experimental results are used to investigate the relation between the microscopic parameters and the observed physical properties. It is shown that the density of eletronic states determines the shift Tc as well as the variation of the electrical resistivity. It is necessary to assume strong hybridization between s and d bands to understand the eletrodynamic response of the superconductor. (Author) [pt

  16. The Effects of Suggestibility on Relaxation.

    Science.gov (United States)

    Rickard, Henry C.; And Others

    1985-01-01

    Selected undergraduates (N=32) on the basis of Creative Imagination Scale scores and randomly assigned high and low suggestibility subjects to progressive relaxation (PR) and suggestions of relaxation (SR) training modes. Results revealed a significant pre-post relaxation effect, and main efffects for both suggestibility and training mode. (NRB)

  17. Low noise buffer amplifiers and buffered phase comparators for precise time and frequency measurement and distribution

    Science.gov (United States)

    Eichinger, R. A.; Dachel, P.; Miller, W. H.; Ingold, J. S.

    1982-01-01

    Extremely low noise, high performance, wideband buffer amplifiers and buffered phase comparators were developed. These buffer amplifiers are designed to distribute reference frequencies from 30 KHz to 45 MHz from a hydrogen maser without degrading the hydrogen maser's performance. The buffered phase comparators are designed to intercompare the phase of state of the art hydrogen masers without adding any significant measurement system noise. These devices have a 27 femtosecond phase stability floor and are stable to better than one picosecond for long periods of time. Their temperature coefficient is less than one picosecond per degree C, and they have shown virtually no voltage coefficients.

  18. Relaxed Poisson cure rate models.

    Science.gov (United States)

    Rodrigues, Josemar; Cordeiro, Gauss M; Cancho, Vicente G; Balakrishnan, N

    2016-03-01

    The purpose of this article is to make the standard promotion cure rate model (Yakovlev and Tsodikov, ) more flexible by assuming that the number of lesions or altered cells after a treatment follows a fractional Poisson distribution (Laskin, ). It is proved that the well-known Mittag-Leffler relaxation function (Berberan-Santos, ) is a simple way to obtain a new cure rate model that is a compromise between the promotion and geometric cure rate models allowing for superdispersion. So, the relaxed cure rate model developed here can be considered as a natural and less restrictive extension of the popular Poisson cure rate model at the cost of an additional parameter, but a competitor to negative-binomial cure rate models (Rodrigues et al., ). Some mathematical properties of a proper relaxed Poisson density are explored. A simulation study and an illustration of the proposed cure rate model from the Bayesian point of view are finally presented. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Arresting relaxation in Pickering Emulsions

    Science.gov (United States)

    Atherton, Tim; Burke, Chris

    2015-03-01

    Pickering emulsions consist of droplets of one fluid dispersed in a host fluid and stabilized by colloidal particles absorbed at the fluid-fluid interface. Everyday materials such as crude oil and food products like salad dressing are examples of these materials. Particles can stabilize non spherical droplet shapes in these emulsions through the following sequence: first, an isolated droplet is deformed, e.g. by an electric field, increasing the surface area above the equilibrium value; additional particles are then adsorbed to the interface reducing the surface tension. The droplet is then allowed to relax toward a sphere. If more particles were adsorbed than can be accommodated by the surface area of the spherical ground state, relaxation of the droplet is arrested at some non-spherical shape. Because the energetic cost of removing adsorbed colloids exceeds the interfacial driving force, these configurations can remain stable over long timescales. In this presentation, we present a computational study of the ordering present in anisotropic droplets produced through the mechanism of arrested relaxation and discuss the interplay between the geometry of the droplet, the dynamical process that produced it, and the structure of the defects observed.

  20. Vibrational relaxation in OCS mixtures

    International Nuclear Information System (INIS)

    Simpson, C.J.S.M.; Gait, P.D.; Simmie, J.M.

    1976-01-01

    Experimental measurements are reported of vibrational relaxation times which may be used to show whether there is near resonant vibration-rotation energy transfer between OCS and H 2 , D 2 or HD. Vibrational relaxation times have been measured in OCS and OCS mixtures over the temperature range 360 to 1000 K using a shock tube and a laser schlieren system. The effectiveness of the additives in reducing the relaxation time of OCS is in the order 4 He 3 He 2 2 and HD. Along this series the effect of an increase in temperature changes from the case of speeding up the rate with 4 He to retarding it with D 2 , HD and H 2 . There is no measurable difference in the effectiveness of n-D 2 and o-D 2 and little, or no, difference between n-H 2 and p-H 2 . Thus the experimental results do not give clear evidence for rotational-vibration energy transfer between hydrogen and OCS. This contrasts with the situation for CO 2 + H 2 mixtures. (author)

  1. Relaxed plasma-vacuum systems

    International Nuclear Information System (INIS)

    Spies, G.O.; Lortz, D.; Kaiser, R.

    2001-01-01

    Taylor's theory of relaxed toroidal plasmas (states of lowest energy with fixed total magnetic helicity) is extended to include a vacuum between the plasma and the wall. In the extended variational problem, one prescribes, in addition to the helicity and the magnetic fluxes whose conservation follows from the perfect conductivity of the wall, the fluxes whose conservation follows from the assumption that the plasma-vacuum interface is also perfectly conducting (if the wall is a magnetic surface, then one has the toroidal and the poloidal flux in the vacuum). Vanishing of the first energy variation implies a pressureless free-boundary magnetohydrostatic equilibrium with a Beltrami magnetic field in the plasma, and in general with a surface current in the interface. Positivity of the second variation implies that the equilibrium is stable according to ideal magnetohydrodynamics, that it is a relaxed state according to Taylor's theory if the interface is replaced by a wall, and that the surface current is nonzero (at least if there are no closed magnetic field lines in the interface). The plane slab, with suitable boundary conditions to simulate a genuine torus, is investigated in detail. The relaxed state has the same double symmetry as the vessel if, and only if, the prescribed helicity is in an interval that depends on the prescribed fluxes. This interval is determined in the limit of a thin slab

  2. Regularized Label Relaxation Linear Regression.

    Science.gov (United States)

    Fang, Xiaozhao; Xu, Yong; Li, Xuelong; Lai, Zhihui; Wong, Wai Keung; Fang, Bingwu

    2018-04-01

    Linear regression (LR) and some of its variants have been widely used for classification problems. Most of these methods assume that during the learning phase, the training samples can be exactly transformed into a strict binary label matrix, which has too little freedom to fit the labels adequately. To address this problem, in this paper, we propose a novel regularized label relaxation LR method, which has the following notable characteristics. First, the proposed method relaxes the strict binary label matrix into a slack variable matrix by introducing a nonnegative label relaxation matrix into LR, which provides more freedom to fit the labels and simultaneously enlarges the margins between different classes as much as possible. Second, the proposed method constructs the class compactness graph based on manifold learning and uses it as the regularization item to avoid the problem of overfitting. The class compactness graph is used to ensure that the samples sharing the same labels can be kept close after they are transformed. Two different algorithms, which are, respectively, based on -norm and -norm loss functions are devised. These two algorithms have compact closed-form solutions in each iteration so that they are easily implemented. Extensive experiments show that these two algorithms outperform the state-of-the-art algorithms in terms of the classification accuracy and running time.

  3. Buffer-free therapeutic antibody preparations provide a viable alternative to conventionally buffered solutions: from protein buffer capacity prediction to bioprocess applications.

    Science.gov (United States)

    Bahrenburg, Sven; Karow, Anne R; Garidel, Patrick

    2015-04-01

    Protein therapeutics, including monoclonal antibodies (mAbs), have significant buffering capacity, particularly at concentrations>50 mg/mL. This report addresses pH-related issues critical to adoption of self-buffered monoclonal antibody formulations. We evaluated solution conditions with protein concentrations ranging from 50 to 250 mg/mL. Samples were both buffer-free and conventionally buffered with citrate. Samples were non-isotonic or adjusted for isotonicity with NaCl or trehalose. Studies included accelerated temperature stability tests, shaking stability studies, and pH changes in infusion media as protein concentrate is added. We present averaged buffering slopes of capacity that can be applied to any mAb and present a general method for calculating buffering capacity of buffer-free, highly concentrated antibody liquid formulations. In temperature stability tests, neither buffer-free nor conventionally buffered solution conditions showed significant pH changes. Conventionally buffered solutions showed significantly higher opalescence than buffer-free ones. In general, buffer-free solution conditions showed less aggregation than conventionally buffered solutions. Shaking stability tests showed no differences between buffer-free and conventionally buffered solutions. "In-use" preparation experiments showed that pH in infusion bag medium can rapidly approximate that of self-buffered protein concentrate as concentrate is added. In summary, the buffer capacity of proteins can be predicted and buffer-free therapeutic antibody preparations provide a viable alternative to conventionally buffered solutions. Copyright © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Is buffer a good proxy for a crowded cell-like environment? A comparative NMR study of calmodulin side-chain dynamics in buffer and E. coli lysate.

    Directory of Open Access Journals (Sweden)

    Michael P Latham

    Full Text Available Biophysical studies of protein structure and dynamics are typically performed in a highly controlled manner involving only the protein(s of interest. Comparatively fewer such studies have been carried out in the context of a cellular environment that typically involves many biomolecules, ions and metabolites. Recently, solution NMR spectroscopy, focusing primarily on backbone amide groups as reporters, has emerged as a powerful technique for investigating protein structure and dynamics in vivo and in crowded "cell-like" environments. Here we extend these studies through a comparative analysis of Ile, Leu, Val and Met methyl side-chain motions in apo, Ca(2+-bound and Ca(2+, peptide-bound calmodulin dissolved in aqueous buffer or in E. coli lysate. Deuterium spin relaxation experiments, sensitive to pico- to nano-second time-scale processes and Carr-Purcell-Meiboom-Gill relaxation dispersion experiments, reporting on millisecond dynamics, have been recorded. Both similarities and differences in motional properties are noted for calmodulin dissolved in buffer or in lysate. These results emphasize that while significant insights can be obtained through detailed "test-tube" studies, experiments performed under conditions that are "cell-like" are critical for obtaining a comprehensive understanding of protein motion in vivo and therefore for elucidating the relation between motion and function.

  5. Static mechanical properties of buffer material

    International Nuclear Information System (INIS)

    Takaji, Kazuhiko; Suzuki, Hideaki

    1999-11-01

    The buffer material is expected to maintain its low water permeability, self-sealing properties, radionuclides adsorption and retardation properties, thermal conductivity, chemical buffering properties, overpack supporting properties, stress buffering properties, etc. over a long period of time. Natural clay is mentioned as a material that can relatively satisfy above. Among the kinds of natural clay, bentonite when compacted is superior because (i) it has exceptionally low water permeability and properties to control the movement of water in buffer, (ii) it fills void spaces in the buffer and fractures in the host rock as it swells upon water uptake, (iii) it has the ability to exchange cations and to adsorb cationic radioelements. In order to confirm these functions for the purpose of safety assessment, it is necessary to evaluate buffer properties through laboratory tests and engineering-scale tests, and to make assessments based on the ranges in the data obtained. This report describes the procedures, test conditions, results and examinations on the buffer material of unconfined compression tests, one-dimensional consolidation tests, consolidated-undrained triaxial compression tests and consolidated-undrained triaxial creep tests that aim at getting hold of static mechanical properties. We can get hold of the relationship between the dry density and tensile stress etc. by Brazilian tests, between the dry density and unconfined compressive strength etc. by unconfined compression tests, between the consolidation stress and void ratio etc. by one-dimensional consolidation tests, the stress pass of each effective confining pressure etc. by consolidated-undrained triaxial compression tests and the axial strain rate with time of each axial stress etc. by consolidated-undrained triaxial creep tests. (author)

  6. Capturing molecular multimode relaxation processes in excitable gases based on decomposition of acoustic relaxation spectra

    Science.gov (United States)

    Zhu, Ming; Liu, Tingting; Wang, Shu; Zhang, Kesheng

    2017-08-01

    Existing two-frequency reconstructive methods can only capture primary (single) molecular relaxation processes in excitable gases. In this paper, we present a reconstructive method based on the novel decomposition of frequency-dependent acoustic relaxation spectra to capture the entire molecular multimode relaxation process. This decomposition of acoustic relaxation spectra is developed from the frequency-dependent effective specific heat, indicating that a multi-relaxation process is the sum of the interior single-relaxation processes. Based on this decomposition, we can reconstruct the entire multi-relaxation process by capturing the relaxation times and relaxation strengths of N interior single-relaxation processes, using the measurements of acoustic absorption and sound speed at 2N frequencies. Experimental data for the gas mixtures CO2-N2 and CO2-O2 validate our decomposition and reconstruction approach.

  7. Temperature Buffer Test. Measurements of water content and density of the excavated buffer material

    Energy Technology Data Exchange (ETDEWEB)

    Johannesson, Lars-Erik [Clay Technology AB, Lund (Sweden)

    2010-12-15

    TBT (Temperature Buffer Test) is a joint project between SKB/ANDRA and supported by ENRESA (modeling) and DBE (instrumentation), which aims at understanding and modeling the thermo-hydromechanical behavior of buffers made of swelling clay submitted to high temperatures (over 100 deg C) during the water saturation process. The test was carried out at the - 420 m level in Aespoe HRL in a 8 meters deep and 1.76 m diameter deposition hole, with two heaters (3 m long, 0.6 m diameter), surrounded by a MX-80 bentonite buffer and a confining plug on top anchored with 9 rods. It was installed during spring 2003. The bentonite around upper heater was removed during the period October - December 2009 and the buffer around the lower heater was removed during January - Mars 2010. During dismantling of the buffer, samples were taken on which analyses were made. This report describes the work with the deteroemoeination of the water content and the density of the taken samples. Most of the samples were taken from the buffer by core drilling from the upper surface of each installed bentonite block. The cores had a diameter of about 50 mm and a maximum length equal to the original height of the bentonite blocks (about 500 mm). The water content of the buffer was determined by drying a sample at a temperature of 105 deg C for 24 h and the bulk density was determined by weighing a sample both in the air and immerged in paraffin oil with known density. The water content, dry density, degree of saturation and void ratio of the buffer were then plotted. The plots show that all parts of the buffer had taken up water and the degree of saturation of the buffer varied between 90 - 100%. Large variation in the dry density of the buffer was also observed.

  8. Sandpile model for relaxation in complex systems

    International Nuclear Information System (INIS)

    Vazquez, A.; Sotolongo-Costa, O.; Brouers, F.

    1997-10-01

    The relaxation in complex systems is, in general, nonexponential. After an initial rapid decay the system relaxes slowly following a long time tail. In the present paper a sandpile moderation of the relaxation in complex systems is analysed. Complexity is introduced by a process of avalanches in the Bethe lattice and a feedback mechanism which leads to slower decay with increasing time. In this way, some features of relaxation in complex systems: long time tails relaxation, aging, and fractal distribution of characteristic times, are obtained by simple computer simulations. (author)

  9. Scientific Applications Performance Evaluation on Burst Buffer

    KAUST Repository

    Markomanolis, George S.

    2017-10-19

    Parallel I/O is an integral component of modern high performance computing, especially in storing and processing very large datasets, such as the case of seismic imaging, CFD, combustion and weather modeling. The storage hierarchy includes nowadays additional layers, the latest being the usage of SSD-based storage as a Burst Buffer for I/O acceleration. We present an in-depth analysis on how to use Burst Buffer for specific cases and how the internal MPI I/O aggregators operate according to the options that the user provides during his job submission. We analyze the performance of a range of I/O intensive scientific applications, at various scales on a large installation of Lustre parallel file system compared to an SSD-based Burst Buffer. Our results show a performance improvement over Lustre when using Burst Buffer. Moreover, we show results from a data hierarchy library which indicate that the standard I/O approaches are not enough to get the expected performance from this technology. The performance gain on the total execution time of the studied applications is between 1.16 and 3 times compared to Lustre. One of the test cases achieved an impressive I/O throughput of 900 GB/s on Burst Buffer.

  10. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-08-15

    The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

  11. The relationships between suggestibility, influenceability, and relaxability.

    Science.gov (United States)

    Polczyk, Romuald; Frey, Olga; Szpitalak, Malwina

    2013-01-01

    This research explores the relationships between relaxability and various aspects of suggestibility and influenceability. The Jacobson Progressive Muscle Relaxation procedure was used to induce relaxation. Tests of direct suggestibility, relating to the susceptibility of overt suggestions, and indirect suggestibility, referring to indirect hidden influence, as well as self-description questionnaires on suggestibility and the tendency to comply were used. Thayer's Activation-Deactivation Adjective Check List, measuring various kinds of activation and used as a pre- and posttest, determined the efficacy of the relaxation procedure. Indirect, direct, and self-measured suggestibility proved to be positively related to the ability to relax, measured by Thayer's subscales relating to emotions. Compliance was not related to relaxability. The results are discussed in terms of the aspects of relaxation training connected with suggestibility.

  12. Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

    Science.gov (United States)

    Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

    2018-05-01

    A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

  13. Improved indexes for targeting placement of buffers of Hortonian runoff

    Science.gov (United States)

    M.G. Dosskey; Z. Qiu; M.J. Helmers; D.E. Eisenhauer

    2011-01-01

    Targeting specific locations within agricultural watersheds for installing vegetative buffers has been advocated as a way to enhance the impact of buffers and buffer programs on stream water quality. Existing models for targeting buffers of Hortonian, or infiltration-excess, runoff are not well developed. The objective was to improve on an existing soil survey–based...

  14. A buffer overflow detection based on inequalities solution

    International Nuclear Information System (INIS)

    Xu Guoai; Zhang Miao; Yang Yixian

    2007-01-01

    A new buffer overflow detection model based on Inequalities Solution was designed, which is based on analyzing disadvantage of the old buffer overflow detection technique and successfully converting buffer overflow detection to Inequalities Solution. The new model can conquer the disadvantage of the old technique and improve efficiency of buffer overflow detection. (authors)

  15. Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, K.L., E-mail: klli2010@sinano.ac.cn [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Sun, Y.R. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Dong, J.R. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); He, Y.; Zeng, X.L. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhao, Y.M.; Yu, S.Z.; Zhao, C.Y. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China)

    2015-10-30

    High quality strain-relaxed In0.3Ga0.7As layers with threading dislocation density about 2 × 10{sup 6} cm{sup −2} and root-mean-square surface roughness below 8.0 nm were obtained on GaAs substrates using compositionally undulating step-graded Ga{sub 1−x}In{sub x}P (x = 0.48–0.78) buffers. The transmission electron microscopy results reveal that the conventional step-graded GaInP buffers produce high density dislocation pile-ups, which are induced by the blocking effect of the nonuniform misfit dislocation strain field and crosshatched surface on the gliding of threading dislocations. In contrast, due to strain compensation, insertion of the tensile GaInP layers decreases the surface roughness and promotes dislocation annihilation in the interfaces, and eventually reduces the threading dislocation density. This provides a promising way to achieve a virtual substrate with the desired lattice parameter for metamorphic device applications. - Highlights: • Metamorphic GaInP buffers were grown by metal–organic chemical vapor deposition. • The compositionally undulating buffers effectively reduce the threading dislocation density. • High quality strain-relaxed In{sub 0.3}Ga{sub 0.7}As layers were obtained.

  16. Protein brownian rotation at the glass transition temperature of a freeze-concentrated buffer probed by superparamagnetic nanoparticles.

    Science.gov (United States)

    Eloi, J-C; Okuda, M; Jones, S E Ward; Schwarzacher, W

    2013-06-18

    For applications from food science to the freeze-thawing of proteins it is important to understand the often complex freezing behavior of solutions of biomolecules. Here we use a magnetic method to monitor the Brownian rotation of a quasi-spherical cage-shaped protein, apoferritin, approaching the glass transition Tg in a freeze-concentrated buffer (Tris-HCl). The protein incorporates a synthetic magnetic nanoparticle (Co-doped Fe3O4 (magnetite)). We use the magnetic signal from the nanoparticles to monitor the protein orientation. As T decreases toward Tg of the buffer solution the protein's rotational relaxation time increases exponentially, taking values in the range from a few seconds up to thousands of seconds, i.e., orders of magnitude greater than usually accessed, e.g., by NMR. The longest relaxation times measured correspond to estimated viscosities >2 MPa s. As well as being a means to study low-temperature, high-viscosity environments, our method provides evidence that, for the cooling protocol used, the following applies: 1), the concentration of the freeze-concentrated buffer at Tg is independent of its initial concentration; 2), little protein adsorption takes place at the interface between ice and buffer; and 3), the protein is free to rotate even at temperatures as low as 207 K. Copyright © 2013 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  17. Compaction and relaxation of biofilms

    KAUST Repository

    Valladares Linares, R.

    2015-06-18

    Operation of membrane systems for water treatment can be seriously hampered by biofouling. A better characterization of biofilms in membrane systems and their impact on membrane performance may help to develop effective biofouling control strategies. The objective of this study was to determine the occurrence, extent and timescale of biofilm compaction and relaxation (decompaction), caused by permeate flux variations. The impact of permeate flux changes on biofilm thickness, structure and stiffness was investigated in situ and non-destructively with optical coherence tomography using membrane fouling monitors operated at a constant crossflow velocity of 0.1 m s−1 with permeate production. The permeate flux was varied sequentially from 20 to 60 and back to 20 L m−2 h−1. The study showed that the average biofilm thickness on the membrane decreased after elevating the permeate flux from 20 to 60 L m−2 h−1 while the biofilm thickness increased again after restoring the original flux of 20 L m−2 h−1, indicating the occurrence of biofilm compaction and relaxation. Within a few seconds after the flux change, the biofilm thickness was changed and stabilized, biofilm compaction occurred faster than the relaxation after restoring the original permeate flux. The initial biofilm parameters were not fully reinstated: the biofilm thickness was reduced by 21%, biofilm stiffness had increased and the hydraulic biofilm resistance was elevated by 16%. Biofilm thickness was related to the hydraulic biofilm resistance. Membrane performance losses are related to the biofilm thickness, density and morphology, which are influenced by (variations in) hydraulic conditions. A (temporarily) permeate flux increase caused biofilm compaction, together with membrane performance losses. The impact of biofilms on membrane performance can be influenced (increased and reduced) by operational parameters. The article shows that a (temporary) pressure increase leads to more

  18. Moisture buffer capacity of different insulation materials

    DEFF Research Database (Denmark)

    Peuhkuri, Ruut Hannele; Rode, Carsten; Hansen, Kurt Kielsgaard

    2004-01-01

    . In the isothermal tests the material samples were exposed to the same change in the relative humidity of the ambient air on both sides, while the samples were exposed to variations in relative humidity only on the cold side in the non-isothermal tests. The results of these rather different measurement principles...... lead to more durable constructions. In this paper, a large range of very different thermal insulation materials have been tested in specially constructed laboratory facilities to determine their moisture buffer capacity. Both isothermal and nonisothermal experimental set-ups have been used...... are discussed, and different ways are presented how to determine the moisture buffer capacity of the materials using partly standard material parameters and partly parameters determined from the actual measurements. The results so far show that the determination of moisture buffer capacity is very sensitive...

  19. Buffer construction technique using granular bentonite

    International Nuclear Information System (INIS)

    Masuda, Ryoichi; Asano, Hidekazu; Toguri, Satohito; Mori, Takuo; Shimura, Tomoyuki; Matsuda, Takeshi; Uyama, Masao; Noda, Masaru

    2007-01-01

    Buffer construction using bentonite pellets as filling material is a promising technology for enhancing the ease of repository operation. In this study, a test of such technology was conducted in a full-scale simulated disposal drift, using a filling system which utilizes a screw conveyor system. The simulated drift, which contained two dummy overpacks, was configured as a half-cross-section model with a height of 2.22 m and a length of 6.0 m. The average dry density of the buffer obtained in the test was 1.29 Mg/m 3 , with an angle of repose of 35 to 40 degrees. These test results indicate that buffer construction using a screw conveyor system for pellet emplacement in a waste disposal drift is a promising technology for repositories for high level radioactive wastes. (author)

  20. Labview virtual instruments for calcium buffer calculations.

    Science.gov (United States)

    Reitz, Frederick B; Pollack, Gerald H

    2003-01-01

    Labview VIs based upon the calculator programs of Fabiato and Fabiato (J. Physiol. Paris 75 (1979) 463) are presented. The VIs comprise the necessary computations for the accurate preparation of multiple-metal buffers, for the back-calculation of buffer composition given known free metal concentrations and stability constants used, for the determination of free concentrations from a given buffer composition, and for the determination of apparent stability constants from absolute constants. As implemented, the VIs can concurrently account for up to three divalent metals, two monovalent metals and four ligands thereof, and the modular design of the VIs facilitates further extension of their capacity. As Labview VIs are inherently graphical, these VIs may serve as useful templates for those wishing to adapt this software to other platforms.

  1. Developing suitable buffers to capture transport cycling behavior

    DEFF Research Database (Denmark)

    Madsen, Thomas; Schipperijn, Jasper; Christiansen, Lars Breum

    2014-01-01

    units (e.g., home-buffer-based neighborhoods) are not necessarily representative for environmental exposure. An increased understanding of appropriate neighborhoods is needed. GPS cycling tracks from 78 participants for 7 days form the basis for the development and testing of different neighborhood...... buffers for transport cycling. The percentage of GPS points per square meter was used as indicator of the effectiveness of a series of different buffer types, including home-based network buffers, shortest route to city center buffers, and city center-directed ellipse-shaped buffers. The results show...... center-directed ellipse-shaped buffers yielded better results than traditional home-based network buffer types. The ellipse-shaped buffer types could therefore be considered an alternative to more traditional buffers or administrative units in future studies of transport cycling behavior....

  2. Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

    International Nuclear Information System (INIS)

    Avella, M.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Ortiz, M.I.; Ballesteros, C.

    2008-01-01

    Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO 2 onto Si wafers (in a single run at 390 deg. C and 50 mTorr, using GeH 4 , Si 2 H 6 and O 2 ) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80 K and also at room temperature. The annealing conditions (temperatures ranging from 700 to 1000 deg. C and for times of 30 and 60 s) have been investigated in samples with different diameter of the nanoparticles (from ∼3 to ≥5 nm) and oxide interlayer thickness (15 and 35 nm) in order to establish a correlation between the crystallization of the nanoparticles, the degradation of their composition by Ge diffusion and the intensity of the luminescence emission band. Structures with small nanoparticles (3-4.5 nm) separated by thick oxide barriers (∼35 nm) annealed at 900 deg. C for 60 s yield the maximum intensity of the luminescence. An additional treatment at 450 deg. C in forming gas for dangling-bond passivation increases the intensity of the luminescence band by 25-30%

  3. Spin dynamics in SiGe quantum dot lines and ring molecules

    Science.gov (United States)

    Zinovieva, A. F.; Nenashev, A. V.; Dvurechenskii, A. V.

    2016-04-01

    Semiconductor quantum dot (QD) structures can be used as a model for understanding the effect of the microscopic structure, symmetry of crystals, and molecules on their macroscopic properties. In this work, the results of two theoretical approaches demonstrate that the spin dynamics in ordered QD structures depends on the size, spatial configuration, and topology of the object built of QDs. It was shown that the spin dynamics in QD structures with the hopping regime of conductivity significantly differs from the spin dynamics in two-dimensional (2D) and three-dimensional (3D) structures being at the other side of the metal-insulator transition. The special character of the effective magnetic field δ H fluctuations appearing only during tunneling between quantum dots is responsible for the insensitivity of spin relaxation times to the magnitude of the external magnetic field in infinite QD structures (2D square lattice and 1D linear QD chain). In finite QD structures (QD rings and linear chains), an external magnetic field H0 is directly involved in the spin relaxation process and spin is lost due to interaction with a special combination of fields Δ H ˜[H0×δ H ]/δ H that leads to an unusual orientation dependence of ESR linewidth, recently observed for QD chains. It was shown that the ordering of QD structures can be used for the conservation of spin orientation. For 1D finite quantum dot chains, the ordering can provide the stabilization of all spin components Sx,Sy, and Sz, while for ringlike molecules only Sz polarization can be stabilized. The results obtained in this work can be useful for development of novel semiconductor devices and in quantum information processing.

  4. Buffer of Events as a Markovian Process

    International Nuclear Information System (INIS)

    Berdugo, J.; Casaus, J.; Mana, C.

    2001-01-01

    In Particle and Asro-Particle Physics experiments, the events which get trough the detectors are read and processes on-line before they are stored for a more detailed processing and future Physics analysis. Since the events are read and, usually, processed sequentially, the time involved in these operations can lead to a significant lose of events which is, to some extent, reduced by using buffers. We present an estimate of the optimum buffer size and the fraction of events lost for a simple experimental condition which serves as an introductory example to the use of Markow Chains.(Author)

  5. Buffer of Events as a Markovian Process

    Energy Technology Data Exchange (ETDEWEB)

    Berdugo, J.; Casaus, J.; Mana, C.

    2001-07-01

    In Particle and Asro-Particle Physics experiments, the events which get trough the detectors are read and processes on-line before they are stored for a more detailed processing and future Physics analysis. Since the events are read and, usually, processed sequentially, the time involved in these operations can lead to a significant lose of events which is, to some extent, reduced by using buffers. We present an estimate of the optimum buffer size and the fraction of events lost for a simple experimental condition which serves as an introductory example to the use of Markow Chains.(Author)

  6. Emplacement of small and large buffer blocks

    International Nuclear Information System (INIS)

    Saari, H.; Nikula, M.; Suikki, M.

    2010-05-01

    The report describes emplacement of a buffer structure encircling a spent fuel canister to be deposited in a vertical hole. The report deals with installability of various size blocks and with an emplacement gear, as well as evaluates the achieved quality of emplacement and the time needed for installing the buffer. Two block assembly of unequal size were chosen for examination. A first option involved small blocks, the use of which resulted in a buffer structure consisting of small sector blocks 200 mm in height. A second option involved large blocks, resulting in a buffer structure which consists of eight blocks. In these tests, the material chosen for both block options was concrete instead of bentonite. The emplacement test was a three-phase process. A first phase included stacking a two meter high buffer structure with small blocks for ensuring the operation of test equipment and blocks. A second phase included installing buffer structures with both block options to a height matching that of a canister-encircling cylindrical component. A third phase included testing also the installability of blocks to be placed above the canister by using small blocks. In emplacement tests, special attention was paid to the installability of blocks as well as to the time required for emplacement. Lifters for both blocks worked well. Due to the mass to be lifted, the lifter for large blocks had a more heavy-duty frame structure (and other lifting gear). The employed lifters were suspended in the tests on a single steel wire rope. Stacking was managed with both block sizes at adequate precision and stacked-up towers were steady. The stacking of large blocks was considerably faster. Therefore it is probably that the overall handling of the large blocks will be more convenient at a final disposal site. From the standpoint of reliability in lifting, the small blocks were safer to install above the canister. In large blocks, there are strict shape-related requirements which are

  7. Grass buffers for playas in agricultural landscapes: An annotated bibliography

    Science.gov (United States)

    Melcher, Cynthia P.; Skagen, Susan K.

    2005-01-01

    This bibliography and associated literature synthesis (Melcher and Skagen, 2005) was developed for the Playa Lakes Joint Venture (PLJV). The PLJV sought compilation and annotation of the literature on grass buffers for protecting playas from runoff containing sediments, nutrients, pesticides, and other contaminants. In addition, PLJV sought information regarding the extent to which buffers may attenuate the precipitation runoff needed to fill playas, and avian use of buffers. We emphasize grass buffers, but we also provide information on other buffer types.

  8. Ultrasonic relaxations in borate glasses

    International Nuclear Information System (INIS)

    D'Angelo, G.; Tripodo, G.; Carini, G.; Cosio, E.; Bartolotta, A.; Di Marco, G.

    2004-01-01

    The attenuation and velocity of ultrasonic waves of frequencies in the range from 10 to 70 MHz have been measured in M 2 O-B 2 O 3 borate glasses (M: Li or Ag) as a function of temperature between 15 and 350 K. The velocity of sound waves decreases with increasing temperature in all the glasses, the decrease as the temperature is increased is larger in glasses containing silver than in those with lithium. A broad relaxation peak characterises the attenuation behaviour of the lithium and silver borate glasses at temperatures below 100 K and is paralleled by a corresponding dispersive behaviour of the sound velocity. Above 100 K, the ultrasonic velocity shows a nearly linear behaviour regulated by the vibrational anharmonicity, which decreases with increasing content of modifier oxide and is smaller in lithium than in silver borates. These results suggest that the relaxation of structural defects and the anharmonicity of borate glasses are strongly affected by two parameters: the number of bridging bonds per network forming ion and the polarising power of network modifier ions which occupy sites in the existing interstices

  9. Statistical mechanics of violent relaxation

    International Nuclear Information System (INIS)

    Shu, F.H.

    1978-01-01

    We reexamine the foundations of Lynden-Bell's statistical mechanical discussion of violent relaxation in collisionless stellar systems. We argue that Lynden-Bell's formulation in terms of a continuum description introduces unnecessary complications, and we consider a more conventional formulation in terms of particles. We then find the exclusion principle discovered by Lynden-Bell to be quantitatively important only at phase densities where two-body encounters are no longer negligible. Since the edynamical basis for the exclusion principle vanishes in such cases anyway, Lynden-Bell statistics always reduces in practice to Maxwell-Boltzmann statistics when applied to stellar systems. Lynden-Bell also found the equilibrium distribution function generally to be a sum of Maxwellians with velocity dispersions dependent on the phase density at star formation. We show that this difficulty vanishes in the particulate description for an encounterless stellar system as long as stars of different masses are initially well mixed in phase space. Our methods also demonstrate the equivalence between Gibbs's formalism which uses the microcanonical ensemble and Boltzmann's formalism which uses a coarse-grained continuum description. In addition, we clarify the concept of irreversible behavior on a macroscopic scale for an encounterless stellar system. Finally, we comment on the use of unusual macroscopic constraints to simulate the effects of incomplete relaxation

  10. Paramagnetic relaxation effects in perturbed angular correlations for arbitrary electronic relaxation time

    International Nuclear Information System (INIS)

    Chopin, C.; Spanjaard, D.; Hartmann-Boutron, F.

    1975-01-01

    Previous perturbation treatments of paramagnetic relaxation effects in γγ PAC were limited to the case of very short electronic relaxation times. This limitation is circumvented by invoking a new perturbation theory recently elaborated by Hirst and others for handling relaxation effects in Moessbauer spectra. Under the assumption of spherical electronic relaxation the perturbation factors are computed as functions of certain relaxation parameters which are directly related to the microscopic relaxation Hamiltonian. The results are compared to those of the stochastic theory of Scherer and Blume [fr

  11. Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications

    Science.gov (United States)

    Kar-Roy, Arjun; Howard, David; Preisler, Edward J.; Racanelli, Marco

    2013-05-01

    In this paper, we report on the highest speed 240GHz/340GHz FT/FMAX NPN which is now available for product designs in the SBC18H4 process variant of TowerJazz's mature 0.18μm SBC18 silicon germanium (SiGe) BiCMOS technology platform. NFMIN of ~2dB at 50GHz has been obtained with these NPNs. We also describe the integration of earlier generation NPNs with FT/FMAX of 240GHz/280GHz into SBC13H3, a 0.13μm SiGe BiCMOS technology platform. Next, we detail the integration of the deep silicon via (DSV), through silicon via (TSV), high-resistivity substrate, sub-field stitching and hybrid-stitching capability into the 0.18μm SBC18 technology platform to enable higher performance and highly integrated product designs. The integration of SBC18H3 into a thick-film SOI substrate, with essentially unchanged FT and FMAX, is also described. We also report on recent circuit demonstrations using the SBC18H3 platform: (1) a 4-element phased-array 70-100GHz broadband transmit and receive chip with flat saturated power greater than 5dBm and conversion gain of 33dB; (2) a fully integrated W-band 9-element phase-controllable array with responsivity of 800MV/W and receiver NETD is 0.45K with 20ms integration time; (3) a 16-element 4x4 phased-array transmitter with scanning in both the E- and H-planes with maximum EIRP of 23-25 dBm at 100-110GHz; (4) a power efficient 200GHz VCO with -7.25dBm output power and tuning range of 3.5%; and (5) a 320GHz 16-element imaging receiver array with responsivity of 18KV/W at 315GHz, a 3dB bandwidth of 25GHz and a low NEP of 34pW/Hz1/2. Wafer-scale large-die implementation of the phased-arrays and mmWave imagers using stitching in TowerJazz SBC18 process are also discussed.

  12. The buffer effect in neutral electrolyte supercapacitors

    DEFF Research Database (Denmark)

    Thrane Vindt, Steffen; Skou, Eivind M.

    2016-01-01

    The observation that double-layer capacitors based on neutral aqueous electrolytes can have significantly wider usable potential windows than those based on acidic or alkaline electrolytes is studied. This effect is explained by a local pH change taking place at the electrode surfaces, leading...... potassium nitrate as the electrolyte and potassium phosphates as the buffer system....

  13. Buffer gas cooling and mixture analysis

    Science.gov (United States)

    Patterson, David S.; Doyle, John M.

    2018-03-06

    An apparatus for spectroscopy of a gas mixture is described. Such an apparatus includes a gas mixing system configured to mix a hot analyte gas that includes at least one analyte species in a gas phase into a cold buffer gas, thereby forming a supersaturated mixture to be provided for spectroscopic analysis.

  14. Buffer Overflow Period in a MAP Queue

    Directory of Open Access Journals (Sweden)

    Andrzej Chydzinski

    2007-01-01

    Full Text Available The buffer overflow period in a queue with Markovian arrival process (MAP and general service time distribution is investigated. The results include distribution of the overflow period in transient and stationary regimes and the distribution of the number of cells lost during the overflow interval. All theorems are illustrated via numerical calculations.

  15. Body Buffer Zone and Proxemics in Blocking.

    Science.gov (United States)

    Stockwell, John C.; Bahs, Clarence W.

    This paper investigates the effect of personal body buffer zones on compositional arrangements staged by novice directors. Relationships between directors' concepts of personal space and their projection of its dimensions into staging are studied through the use of a variety of proximity measures--distance, area angles of approach, and physical…

  16. Cross relaxation in nitroxide spin labels

    DEFF Research Database (Denmark)

    Marsh, Derek

    2016-01-01

    Cross relaxation, and mI-dependence of the intrinsic electron spin-lattice relaxation rate We, are incorporated explicitly into the rate equations for the electron-spin population differences that govern the saturation behaviour of 14N- and 15N-nitroxide spin labels. Both prove important in spin......-label EPR and ELDOR, particularly for saturation recovery studies. Neither for saturation recovery, nor for CW-saturation EPR and CW-ELDOR, can cross relaxation be described simply by increasing the value of We, the intrinsic spin-lattice relaxation rate. Independence of the saturation recovery rates from...... the hyperfine line pumped or observed follows directly from solution of the rate equations including cross relaxation, even when the intrinsic spin-lattice relaxation rate We is mI-dependent....

  17. Structural relaxation in annealed hyperquenched basaltic glasses

    DEFF Research Database (Denmark)

    Guo, Xiaoju; Mauro, John C.; Potuzak, M.

    2012-01-01

    The enthalpy relaxation behavior of hyperquenched (HQ) and annealed hyperquenched (AHQ) basaltic glass is investigated through calorimetric measurements. The results reveal a common onset temperature of the glass transition for all the HQ and AHQ glasses under study, indicating that the primary...... relaxation is activated at the same temperature regardless of the initial departure from equilibrium. The analysis of secondary relaxation at different annealing temperatures provides insights into the enthalpy recovery of HQ glasses....

  18. Buffering action of human dentin in vitro.

    Science.gov (United States)

    Camps, J; Pashley, D H

    2000-01-01

    The purpose of this study was to determine the relative contributions of the mineral and organic phases of dentin to its total buffering capacity and to compare the buffering abilities of normal and caries-affected dentin for acids used in adhesive dentistry. Disks of normal and caries-affected human coronal dentin 0.6 mm thick were prepared. Fifty microL of various acids were applied to the surface of mineralized or completely demineralized dentin for varying lengths of time. They were collected from the surface and combined with water rinses to permit titration of the total amount of acid applied, the amount recovered, the total amount that was taken up by the dentin, and the amount that diffused across dentin into 1 mL of water. Equal volumes of acids were applied to mineralized or demineralized dentin powder or hydroxyapatite powder. About 88% to 90% of applied acid was recovered from the surface; only 10% to 12% of the acid was taken up by dentin. Of the H+ that was taken up, only 1% to 2% actually diffused across 0.6 mm of dentin. Increasing the application time of 37% phosphoric acid did not increase the amount of H+ that diffused across dentin. Increasing the concentration of phosphoric acid from 10% to 65% produced only slight increases in H+ diffusion across dentin. There was no difference in the buffering capacity of normal vs caries-affected dentin disks. Almost all of the buffering capacity of dentin is due to its mineral phase. The high buffering capacity of dentin and the high reactivity of H+ insure that little H+ diffuses through dentin more than 0.6 mm thick.

  19. Dielectric Relaxation of Water: Theory and Experiment

    International Nuclear Information System (INIS)

    Adhikari, Narayan Prasad; Paudyal, Harihar; Johri, Manoj

    2010-06-01

    We have studied the hydrogen bond dynamics and methods for evaluation of probability and relaxation time for hydrogen bond network. Further, dielectric relaxation time has been calculated by using a diagonalization procedure by obtaining eigen values (inverse of relaxation time) of a master equation framed on the basis of Fokker-Planck equations. Microwave cavity spectrometer has been described to make measurements of relaxation time. Slater's perturbation equations are given for the analysis of the data. A comparison of theoretical and experimental data shows that there is a need for improvements in the theoretical model and experimental techniques to provide exact information about structural properties of water. (author)

  20. Pair plasma relaxation time scales.

    Science.gov (United States)

    Aksenov, A G; Ruffini, R; Vereshchagin, G V

    2010-04-01

    By numerically solving the relativistic Boltzmann equations, we compute the time scale for relaxation to thermal equilibrium for an optically thick electron-positron plasma with baryon loading. We focus on the time scales of electromagnetic interactions. The collisional integrals are obtained directly from the corresponding QED matrix elements. Thermalization time scales are computed for a wide range of values of both the total-energy density (over 10 orders of magnitude) and of the baryonic loading parameter (over 6 orders of magnitude). This also allows us to study such interesting limiting cases as the almost purely electron-positron plasma or electron-proton plasma as well as intermediate cases. These results appear to be important both for laboratory experiments aimed at generating optically thick pair plasmas as well as for astrophysical models in which electron-positron pair plasmas play a relevant role.

  1. Relaxing Chosen-Ciphertext Security

    DEFF Research Database (Denmark)

    Canetti, Ran; Krawczyk, Hugo; Nielsen, Jesper Buus

    2003-01-01

    Security against adaptive chosen ciphertext attacks (or, CCA security) has been accepted as the standard requirement from encryption schemes that need to withstand active attacks. In particular, it is regarded as the appropriate security notion for encryption schemes used as components within...... general protocols and applications. Indeed, CCA security was shown to suffice in a large variety of contexts. However, CCA security often appears to be somewhat too strong: there exist encryption schemes (some of which come up naturally in practice) that are not CCA secure, but seem sufficiently secure...... “for most practical purposes.” We propose a relaxed variant of CCA security, called Replayable CCA (RCCA) security. RCCA security accepts as secure the non-CCA (yet arguably secure) schemes mentioned above; furthermore, it suffices for most existing applications of CCA security. We provide three...

  2. Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

    International Nuclear Information System (INIS)

    Liu, Li-Jung; Chang-Liao, Kuei-Shu; Jian, Yi-Chuen; Wang, Tien-Ko; Tsai, Ming-Jinn

    2013-01-01

    P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel

  3. Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

    Science.gov (United States)

    Vandersande, Jan W.; Wood, Charles; Draper, Susan

    1987-01-01

    Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

  4. Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

    Directory of Open Access Journals (Sweden)

    Chao-Chun Wang

    2012-01-01

    Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

  5. High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition.

    Science.gov (United States)

    Klementová, Mariana; Palatinus, Lukás; Novotný, Filip; Fajgar, Radek; Subrt, Jan; Drínek, Vladislav

    2013-06-01

    Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy.

  6. Measurement, modeling, and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout

    Science.gov (United States)

    England, Troy; Curry, Matthew; Carr, Steve; Swartzentruber, Brian; Lilly, Michael; Bishop, Nathan; Carrol, Malcolm

    2015-03-01

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance typical of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will discuss calibration data, as well as modeling and simulation of cryogenic silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) circuits connected to a silicon SET and operating at 4 K. We find a continuum of solutions from simple, single-HBT amplifiers to more complex, multi-HBT circuits suitable for integration, with varying noise levels and power vs. bandwidth tradeoffs. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  7. Amorphous-crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

    International Nuclear Information System (INIS)

    D'Angelo, D.; Piro, A.M.; Mirabella, S.; Bongiorno, C.; Romano, L.; Terrasi, A.; Grimaldi, M.G.

    2007-01-01

    Transmission Electron Microscopy was combined with Time Resolved Reflectivity to study the amorphous-crystalline (a-c) interface evolution during Solid Phase Epitaxy Regrowth (SPER) of Si 0.83 Ge 0.17 films deposited on Si by Molecular Beam Epitaxy and amorphized with Ge + ion implantation. Starting from the Si/SiGe interface, a 20 nm thick layer regrows free of defects with the same SPER rate of pure Si. The remaining SiGe regrows with planar defects and dislocations, accompanied by a decrease of the SPER velocity. The sample was also studied after implantation with B or P. In these cases, the SPER rate raises following the doping concentration profile, but no difference in the defect-free layer thickness was observed compared to the un-implanted sample. On the other hand, B or P introduction reduces the a-c interface roughness, while B-P co-implantation produces roughness comparable to the un-implanted sample

  8. The Effects of Progressive Relaxation and Music on Attention, Relaxation, and Stress Responses: An Investigation of the Cognitive-Behavioral Model of Relaxation

    National Research Council Canada - National Science Library

    Scheufele, Peter

    1999-01-01

    ...) suggested that stress management techniques have specific effects A compromise position suggests that the specific effects of relaxation techniques are superimposed upon a general relaxation response...

  9. Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

    Science.gov (United States)

    Cheng, Chih-Hsien; Tzou, An-Jye; Chang, Jung-Hung; Chi, Yu-Chieh; Lin, Yung-Hsiang; Shih, Min-Hsiung; Lee, Chao-Kuei; Wu, Chih-I; Kuo, Hao-Chung; Chang, Chun-Yen; Lin, Gong-Ru

    2016-01-01

    The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1−x) buffer is demonstrated. The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1−x buffer. The C-rich SixC1−x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1−x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC1−x buffer, the device deposited on C-rich SixC1−x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively. PMID:26794268

  10. Relaxation property of the fractional Brownian particle

    International Nuclear Information System (INIS)

    Wang Litan; Lung, C.W.

    1988-08-01

    Dynamic susceptibility of a diffusion system associated with the fractional Brownian motion (fBm) was examined for the fractal property of the Non-Debye relaxation process. The comparisons between fBm and other approaches were made. Anomalous diffusion and the Non-Debye relaxation processes were discussed with this approach. (author). 8 refs, 1 fig

  11. Lifshitz quasinormal modes and relaxation from holography

    NARCIS (Netherlands)

    Sybesma, Watse|info:eu-repo/dai/nl/369283074; Vandoren, Stefan|info:eu-repo/dai/nl/304830739

    2015-01-01

    We obtain relaxation times for field theories with Lifshitz scaling and with holographic duals Einstein-Maxwell-Dilaton gravity theories. This is done by computing quasinormal modes of a bulk scalar field in the presence of Lifshitz black branes. We determine the relation between relaxation time and

  12. Superparamagnetic relaxation of weakly interacting particles

    DEFF Research Database (Denmark)

    Mørup, Steen; Tronc, Elisabeth

    1994-01-01

    The influence of particle interactions on the superparamagnetic relaxation time has been studied by Mossbauer spectroscopy in samples of maghemite (gamma-Fe2O3) particles with different particle sizes and particle separations. It is found that the relaxation time decreases with decreasing particl...

  13. Models of Flux Tubes from Constrained Relaxation

    Indian Academy of Sciences (India)

    tribpo

    J. Astrophys. Astr. (2000) 21, 299 302. Models of Flux Tubes from Constrained Relaxation. Α. Mangalam* & V. Krishan†, Indian Institute of Astrophysics, Koramangala,. Bangalore 560 034, India. *e mail: mangalam @ iiap. ernet. in. † e mail: vinod@iiap.ernet.in. Abstract. We study the relaxation of a compressible plasma to ...

  14. Superparamagnetic relaxation in alpha-Fe particles

    DEFF Research Database (Denmark)

    Bødker, Franz; Mørup, Steen; Pedersen, Michael Stanley

    1998-01-01

    The superparamagnetic relaxation time of carbon-supported alpha-Fe particles with an average size of 3.0 Mm has been studied over a large temperature range by the use of Mossbauer spectroscopy combined with AC and DC magnetization measurements. It is found that the relaxation time varies...

  15. Baryogenesis via Elementary Goldstone Higgs Relaxation

    DEFF Research Database (Denmark)

    Gertov, Helene; Pearce, Lauren; Sannino, Francesco

    2016-01-01

    We extend the relaxation mechanism to the Elementary Goldstone Higgs framework. Besides studying the allowed parameter space of the theory we add the minimal ingredients needed for the framework to be phenomenologically viable. The very nature of the extended Higgs sector allows to consider very ...... but radiatively generated, it is possible to generate the observed matter-antimatter asymmetry via the relaxation mechanism....

  16. Coupled microrings data buffer using fast light

    Science.gov (United States)

    Scheuer, Jacob; Shahriar, Selim

    2013-03-01

    We present a theoretical study of a trap-door optical buffer based on a coupled microrings add/drop filter (ADF) utilizing the white light cavity (WLC). The buffer "trap-door" can be opened and closed by tuning the resonances of the microrings comprising the ADF and trap/release optical pulses. We show that the WLC based ADF yields a maximally flat filter which exhibits superior performances in terms of bandwidth and flatness compared to previous design approaches. We also present a realistic, Silicon-over-Insulator based, design and performance analysis taking into consideration the realistic properties and limitations of the materials and the fabrication process, leading to delays exceeding 850ps for 80GHz bandwidth, and a corresponding delay-bandwidth product of approximately 70.

  17. MOISTURE-BUFFERING CHARACTERISTICS OF BUILDING MATERIALS

    Directory of Open Access Journals (Sweden)

    Young Cheol Choi

    2016-05-01

    Full Text Available The humidity level of indoor air is an important factor influencing the air quality and energy consumption of buildings, as well as the durability of building components. Indoor humidity levels depend on several factors, such as moisture sources, air flow, and the adsorption/desorption properties of materials. The moisture-buffering characteristics of building materials that are in contact with indoor air may help moderate the variations of indoor humidity, especially in the summer and winter. In this study, the moisture adsorption/desorption properties of building materials were investigated experimentally and numerically. These properties can be used to characterize the ability of building materials to exchange moisture with the indoor environment. This study indicates that a building material surface resistivity was the main factor creating variations of moisture buffering.

  18. Chemical buffering capacity of clay rock

    International Nuclear Information System (INIS)

    Beaucaire, C.; Pearson, F.J.; Gautschi, A.

    2004-01-01

    The long-term performance of a nuclear waste repository is strongly dependent on the chemical properties of the host rock. The host rock establishes the chemical environment that determines such important performance attributes as radionuclide solubilities from the waste and the transport rates from the repository to the accessible environment. Clay-rich rocks are especially favourable host rocks because they provide a strong buffering capacity to resist chemical changes prompted either internally, by reactions of the waste itself and emplacement materials, or externally, by changes in the hydrologic systems surrounding the host rock. This paper will focus on three aspects of the stability of clay-rich host rocks: their ability to provide pCO 2 and redox buffering, and to resist chemical changes imposed by changes in regional hydrology and hydro-chemistry. (authors)

  19. Role of buffer gases in optoacoustic spectroscopy

    International Nuclear Information System (INIS)

    Thomas III, L.J.; Kelly, M.J.; Amer, N.M.

    1978-01-01

    The dependence of an acoustically resonant optoacoustic signal on the molecular weight and thermodynamic and transport properpties of the buffer gas is reported. Our results show that careful selection of such gases can significantly increase the sensitivity and flexibility of optoacoustic spectroscopy. We also demonstrate that such thermodynamic quantities as γ (equivalentC/sub p//C/sub v/) and sound velocity can now be measured readily and accurately. Other potential applications are suggested

  20. Microbial activity in bentonite buffers. Literature study

    Energy Technology Data Exchange (ETDEWEB)

    Ratto, M.; Itavaara, M.

    2012-07-01

    The proposed disposal concept for high-level radioactive wastes involves storing the wastes underground in copper-iron containers embedded in buffer material of compacted bentonite. Hydrogen sulphide production by sulphate-reducing prokaryotes is a potential mechanism that could cause corrosion of waste containers in repository conditions. The prevailing conditions in compacted bentonite buffer will be harsh. The swelling pressure is 7-8 MPa, the amount of free water is low and the average pore and pore throat diameters are small. This literature study aims to assess the potential of microbial activity in bentonite buffers. Literature on the environmental limits of microbial life in extreme conditions and the occurrence of sulphatereducing prokaryotes in extreme environments is reviewed briefly and the results of published studies characterizing microbes and microbial processes in repository conditions or in relevant subsurface environments are presented. The presence of bacteria, including SRBs, has been confirmed in deep groundwater and bentonite-based materials. Sulphate reducers have been detected in various high-pressure environments, and sulphate-reduction based on hydrogen as an energy source is considered a major microbial process in deep subsurface environments. In bentonite, microbial activity is strongly suppressed, mainly due to the low amount of free water and small pores, which limit the transport of microbes and nutrients. Spore-forming bacteria have been shown to survive in compacted bentonite as dormant spores, and they are able to resume a metabolically active state after decompaction. Thus, microbial sulphide production may increase in repository conditions if the dry density of the bentonite buffer is locally reduced. (orig.)

  1. Isostatic compression of buffer blocks. Middle scale

    International Nuclear Information System (INIS)

    Ritola, J.; Pyy, E.

    2012-01-01

    Manufacturing of buffer components using isostatic compression method has been studied in small scale in 2008 (Laaksonen 2010). These tests included manufacturing of buffer blocks using different bentonite materials and different compression pressures. Isostatic mould technology was also tested, along with different methods to fill the mould, such as vibration and partial vacuum, as well as a stepwise compression of the blocks. The development of manufacturing techniques has continued with small-scale (30 %) blocks (diameter 600 mm) in 2009. This was done in a separate project: Isostatic compression, manufacturing and testing of small scale (D = 600 mm) buffer blocks. The research on the isostatic compression method continued in 2010 in a project aimed to test and examine the isostatic manufacturing process of buffer blocks at 70 % scale (block diameter 1200 to 1300 mm), and the aim was to continue in 2011 with full-scale blocks (diameter 1700 mm). A total of nine bentonite blocks were manufactured at 70 % scale, of which four were ring-shaped and the rest were cylindrical. It is currently not possible to manufacture full-scale blocks, because there is no sufficiently large isostatic press available. However, such a compression unit is expected to be possible to use in the near future. The test results of bentonite blocks, produced with an isostatic pressing method at different presses and at different sizes, suggest that the technical characteristics, for example bulk density and strength values, are somewhat independent of the size of the block, and that the blocks have fairly homogenous characteristics. Water content and compression pressure are the two most important properties determining the characteristics of the compressed blocks. By adjusting these two properties it is fairly easy to produce blocks at a desired density. The commonly used compression pressure in the manufacturing of bentonite blocks is 100 MPa, which compresses bentonite to approximately

  2. Nuclear Calcium Buffering Capacity Shapes Neuronal Architecture*

    Science.gov (United States)

    Mauceri, Daniela; Hagenston, Anna M.; Schramm, Kathrin; Weiss, Ursula; Bading, Hilmar

    2015-01-01

    Calcium-binding proteins (CaBPs) such as parvalbumin are part of the cellular calcium buffering system that determines intracellular calcium diffusion and influences the spatiotemporal dynamics of calcium signals. In neurons, CaBPs are primarily localized to the cytosol and function, for example, in nerve terminals in short-term synaptic plasticity. However, CaBPs are also expressed in the cell nucleus, suggesting that they modulate nuclear calcium signals, which are key regulators of neuronal gene expression. Here we show that the calcium buffering capacity of the cell nucleus in mouse hippocampal neurons regulates neuronal architecture by modulating the expression levels of VEGFD and the complement factor C1q-c, two nuclear calcium-regulated genes that control dendrite geometry and spine density, respectively. Increasing the levels of nuclear calcium buffers by means of expression of a nuclearly targeted form of parvalbumin fused to mCherry (PV.NLS-mC) led to a reduction in VEGFD expression and, as a result, to a decrease in total dendritic length and complexity. In contrast, mRNA levels of the synapse pruning factor C1q-c were increased in neurons expressing PV.NLS-mC, causing a reduction in the density and size of dendritic spines. Our results establish a close link between nuclear calcium buffering capacity and the transcription of genes that determine neuronal structure. They suggest that the development of cognitive deficits observed in neurological conditions associated with CaBP deregulation may reflect the loss of necessary structural features of dendrites and spines. PMID:26231212

  3. Nuclear Calcium Buffering Capacity Shapes Neuronal Architecture.

    Science.gov (United States)

    Mauceri, Daniela; Hagenston, Anna M; Schramm, Kathrin; Weiss, Ursula; Bading, Hilmar

    2015-09-18

    Calcium-binding proteins (CaBPs) such as parvalbumin are part of the cellular calcium buffering system that determines intracellular calcium diffusion and influences the spatiotemporal dynamics of calcium signals. In neurons, CaBPs are primarily localized to the cytosol and function, for example, in nerve terminals in short-term synaptic plasticity. However, CaBPs are also expressed in the cell nucleus, suggesting that they modulate nuclear calcium signals, which are key regulators of neuronal gene expression. Here we show that the calcium buffering capacity of the cell nucleus in mouse hippocampal neurons regulates neuronal architecture by modulating the expression levels of VEGFD and the complement factor C1q-c, two nuclear calcium-regulated genes that control dendrite geometry and spine density, respectively. Increasing the levels of nuclear calcium buffers by means of expression of a nuclearly targeted form of parvalbumin fused to mCherry (PV.NLS-mC) led to a reduction in VEGFD expression and, as a result, to a decrease in total dendritic length and complexity. In contrast, mRNA levels of the synapse pruning factor C1q-c were increased in neurons expressing PV.NLS-mC, causing a reduction in the density and size of dendritic spines. Our results establish a close link between nuclear calcium buffering capacity and the transcription of genes that determine neuronal structure. They suggest that the development of cognitive deficits observed in neurological conditions associated with CaBP deregulation may reflect the loss of necessary structural features of dendrites and spines. © 2015 by The American Society for Biochemistry and Molecular Biology, Inc.

  4. Isostatic compression of buffer blocks. Middle scale

    Energy Technology Data Exchange (ETDEWEB)

    Ritola, J.; Pyy, E. [VTT Technical Research Centre of Finland, Espoo (Finland)

    2012-01-15

    Manufacturing of buffer components using isostatic compression method has been studied in small scale in 2008 (Laaksonen 2010). These tests included manufacturing of buffer blocks using different bentonite materials and different compression pressures. Isostatic mould technology was also tested, along with different methods to fill the mould, such as vibration and partial vacuum, as well as a stepwise compression of the blocks. The development of manufacturing techniques has continued with small-scale (30 %) blocks (diameter 600 mm) in 2009. This was done in a separate project: Isostatic compression, manufacturing and testing of small scale (D = 600 mm) buffer blocks. The research on the isostatic compression method continued in 2010 in a project aimed to test and examine the isostatic manufacturing process of buffer blocks at 70 % scale (block diameter 1200 to 1300 mm), and the aim was to continue in 2011 with full-scale blocks (diameter 1700 mm). A total of nine bentonite blocks were manufactured at 70 % scale, of which four were ring-shaped and the rest were cylindrical. It is currently not possible to manufacture full-scale blocks, because there is no sufficiently large isostatic press available. However, such a compression unit is expected to be possible to use in the near future. The test results of bentonite blocks, produced with an isostatic pressing method at different presses and at different sizes, suggest that the technical characteristics, for example bulk density and strength values, are somewhat independent of the size of the block, and that the blocks have fairly homogenous characteristics. Water content and compression pressure are the two most important properties determining the characteristics of the compressed blocks. By adjusting these two properties it is fairly easy to produce blocks at a desired density. The commonly used compression pressure in the manufacturing of bentonite blocks is 100 MPa, which compresses bentonite to approximately

  5. Stress relaxation under cyclic electron irradiation

    International Nuclear Information System (INIS)

    Bystrov, L.N.; Reznitskij, M.E.

    1990-01-01

    The kinetics of deformation process in a relaxating sample under 2 MeV electron cyclic irradiation was studied experimentally. The Al-Mg alloys with controllable and different (in dislocation density precipitate presence and their character) structure were used in experiments. It was established that after the beam was switched on the deformation rate increased sharply and then, during prolonged irradiation, in a gradual manner. After the switching-off the relaxation rate decreases by jumps up to values close to extrapolated rates of pre-radiation relaxation. The exhibition of these effects with radiation switching-off and switchin-on is dependent on the initial rate of thermal relaxation, the test temperature, the preliminary cold deformation and the dominating deformation dislocation mechanism. The preliminary cold deformation and test temperature elevation slightly decrease the effect of instantaneous relaxation acceleration with the irradiation switch-on. 17 refs., 5 figs

  6. Relaxation dynamics following transition of solvated electrons

    International Nuclear Information System (INIS)

    Barnett, R.B.; Landman, U.; Nitzan, A.

    1989-01-01

    Relaxation dynamics following an electronic transition of an excess solvated electron in clusters and in bulk water is studied using an adiabatic simulation method. In this method the solvent evolves classically and the electron is constrained to a specified state. The coupling between the solvent and the excess electron is evaluated via the quantum expectation value of the electron--water molecule interaction potential. The relaxation following excitation (or deexcitation) is characterized by two time scales: (i) a very fast (/similar to/20--30 fs) one associated with molecular rotations in the first solvation shell about the electron, and (ii) a slower stage (/similar to/200 fs), which is of the order of the longitudinal dielectric relaxation time. The fast relaxation stage exhibits an isotope effect. The spectroscopical consequences of the relaxation dynamics are discussed

  7. Anomalous enthalpy relaxation in vitreous silica

    DEFF Research Database (Denmark)

    Yue, Yuanzheng

    2015-01-01

    scans. It is known that the liquid fragility (i.e., the speed of the viscous slow-down of a supercooled liquid at its Tg during cooling) has impact on enthalpy relaxation in glass. Here, we find that vitreous silica (as a strong system) exhibits striking anomalies in both glass transition and enthalpy...... relaxation compared to fragile oxide systems. The anomalous enthalpy relaxation of vitreous silica is discovered by performing the hyperquenching-annealing-calorimetry experiments. We argue that the strong systems like vitreous silica and vitreous Germania relax in a structurally cooperative manner, whereas...... the fragile ones do in a structurally independent fashion. We discuss the origin of the anomalous enthalpy relaxation in the HQ vitreous silica....

  8. Vibrational and Rotational Energy Relaxation in Liquids

    DEFF Research Database (Denmark)

    Petersen, Jakob

    Vibrational and rotational energy relaxation in liquids are studied by means of computer simulations. As a precursor for studying vibrational energy relaxation of a solute molecule subsequent to the formation of a chemical bond, the validity of the classical Bersohn-Zewail model for describing......, the vibrational energy relaxation of I2 subsequent to photodissociation and recombination in CCl4 is studied using classical Molecular Dynamics simulations. The vibrational relaxation times and the time-dependent I-I pair distribution function are compared to new experimental results, and a qualitative agreement...... is found in both cases. Furthermore, the rotational energy relaxation of H2O in liquid water is studied via simulations and a power-and-work analysis. The mechanism of the energy transfer from the rotationally excited H2O molecule to its water neighbors is elucidated, i.e. the energy-accepting degrees...

  9. Cross-relaxation solid state lasers

    International Nuclear Information System (INIS)

    Antipenko, B.M.

    1989-01-01

    Cross-relaxation functional diagrams provide a high quantum efficiency for pumping bands of solid state laser media and a low waste heat. A large number of the cross-relaxation mechanisms for decay rare earth excited states in crystals have been investigated. These investigations have been a starting-point for development of the cross-relaxation solid state lasers. For example, the cross-relaxation interactions, have been used for the laser action development of LiYF 4 :Gd-Tb. These interactions are important elements of the functional diagrams of the 2 μm Ho-doped media sensitized with Er and Tm and the 3 μm Er-doped media. Recently, new efficient 2 μm laser media with cross-relaxation pumping diagrams have been developed. Physical aspects of these media are the subject of this paper. A new concept of the Er-doped medium, sensitized with Yb, is illustrated

  10. META-ANALYSIS OF NITROGEN REMOVAL IN RIPARIAN BUFFERS

    Science.gov (United States)

    Riparian buffer zones, the vegetated region adjacent to streams and wetlands, are thought to be effective at intercepting and controlling nitrogen loads entering water bodies. Riparian buffer width may be positively related to nitrogen removal effectiveness by influencing nitrog...

  11. Methyl Bromide Commodity Fumigation Buffer Zone Lookup Tables

    Science.gov (United States)

    Product labels for methyl bromide used in commodity and structural fumigation include requirements for buffer zones around treated areas. The information on this page will allow you to find the appropriate buffer zone for your planned application.

  12. Success and failure with phthalate buffers in capillary zone electrophoresis

    NARCIS (Netherlands)

    Bocek, P.; Gebauer, P.; Beckers, J.L.

    2001-01-01

    Phthalate buffers are currently used in capillary electrophoresis as robust electrolyte systems for indirect detection. This contribution demonstrates that these buffers show regularly not only successful regions of mobilities of analytes (sample window) but also regions of failure where the

  13. Magnetic Resonance Fingerprinting with short relaxation intervals.

    Science.gov (United States)

    Amthor, Thomas; Doneva, Mariya; Koken, Peter; Sommer, Karsten; Meineke, Jakob; Börnert, Peter

    2017-09-01

    The aim of this study was to investigate a technique for improving the performance of Magnetic Resonance Fingerprinting (MRF) in repetitive sampling schemes, in particular for 3D MRF acquisition, by shortening relaxation intervals between MRF pulse train repetitions. A calculation method for MRF dictionaries adapted to short relaxation intervals and non-relaxed initial spin states is presented, based on the concept of stationary fingerprints. The method is applicable to many different k-space sampling schemes in 2D and 3D. For accuracy analysis, T 1 and T 2 values of a phantom are determined by single-slice Cartesian MRF for different relaxation intervals and are compared with quantitative reference measurements. The relevance of slice profile effects is also investigated in this case. To further illustrate the capabilities of the method, an application to in-vivo spiral 3D MRF measurements is demonstrated. The proposed computation method enables accurate parameter estimation even for the shortest relaxation intervals, as investigated for different sampling patterns in 2D and 3D. In 2D Cartesian measurements, we achieved a scan acceleration of more than a factor of two, while maintaining acceptable accuracy: The largest T 1 values of a sample set deviated from their reference values by 0.3% (longest relaxation interval) and 2.4% (shortest relaxation interval). The largest T 2 values showed systematic deviations of up to 10% for all relaxation intervals, which is discussed. The influence of slice profile effects for multislice acquisition is shown to become increasingly relevant for short relaxation intervals. In 3D spiral measurements, a scan time reduction of 36% was achieved, maintaining the quality of in-vivo T1 and T2 maps. Reducing the relaxation interval between MRF sequence repetitions using stationary fingerprint dictionaries is a feasible method to improve the scan efficiency of MRF sequences. The method enables fast implementations of 3D spatially

  14. Corroborative evidences of TV γ -scaling of the α-relaxation originating from the primitive relaxation/JG β relaxation

    Science.gov (United States)

    Ngai, K. L.; Paluch, M.

    2017-12-01

    Successful thermodynamic scaling of the structural alpha-relaxation time or transport coefficients of glass-forming liquids determined at various temperatures T and pressures P means the data conform to a single function of the product variable TVgamma, where V is the specific volume and gamma is a material specific constant. In the past two decades we have witnessed successful TVgamma-scaling in many molecular, polymeric, and even metallic glass-formers, and gamma is related to the slope of the repulsive part of the intermolecular potential. The advances made indicate TVgamma-scaling is an important aspect of the dynamic and thermodynamic properties of glass-formers. In this paper we show the origin of TVgamma-scaling is not from the structural alpha-relaxation time. Instead it comes from its precursor, the Johari-Goldstein beta-relaxation or the primitive relaxation of the Coupling Model and their relaxation times or tau_0 respectively. It is remarkable that all relaxation times are functions of TVgamma with the same gama, as well as the fractional exponent of the Kohlrausch correlation function of the structural alpha-relaxation. We arrive at this conclusion convincingly based on corroborative evidences from a number of experiments and molecular dynamics simulations performed on a wide variety of glass-formers and in conjunction with consistency with the predictions of the Coupling Model.

  15. International comparison of observation-specific spatial buffers

    DEFF Research Database (Denmark)

    Frank, Lawrence D; Fox, Eric H; Ulmer, Jared M

    2017-01-01

    the relative differences in resulting explanatory power on self-reported physical activity outcomes. BEMs were developed in five countries using 'sausage,' 'detailed-trimmed,' and 'detailed,' network buffers at a distance of 1 km around participant household addresses (n = 5883). RESULTS: BEM values were...... significantly different (p trimmed buffer comparisons and 89% of sausage versus detailed network buffer comparisons. Results showed that BEM coefficients in physical activity models did not differ significantly across buffering methods, and in most cases BEM...

  16. Complexation of buffer constituents with neutral complexation agents: part I. Impact on common buffer properties.

    Science.gov (United States)

    Riesová, Martina; Svobodová, Jana; Tošner, Zdeněk; Beneš, Martin; Tesařová, Eva; Gaš, Bohuslav

    2013-09-17

    The complexation of buffer constituents with the complexation agent present in the solution can very significantly influence the buffer properties, such as pH, ionic strength, or conductivity. These parameters are often crucial for selection of the separation conditions in capillary electrophoresis or high-pressure liquid chromatography (HPLC) and can significantly affect results of separation, particularly for capillary electrophoresis as shown in Part II of this paper series (Beneš, M.; Riesová, M.; Svobodová, J.; Tesařová, E.; Dubský, P.; Gaš, B. Anal. Chem. 2013, DOI: 10.1021/ac401381d). In this paper, the impact of complexation of buffer constituents with a neutral complexation agent is demonstrated theoretically as well as experimentally for the model buffer system composed of benzoic acid/LiOH or common buffers (e.g., CHES/LiOH, TAPS/LiOH, Tricine/LiOH, MOPS/LiOH, MES/LiOH, and acetic acid/LiOH). Cyclodextrins as common chiral selectors were used as model complexation agents. We were not only able to demonstrate substantial changes of pH but also to predict the general complexation characteristics of selected compounds. Because of the zwitterion character of the common buffer constituents, their charged forms complex stronger with cyclodextrins than the neutral ones do. This was fully proven by NMR measurements. Additionally complexation constants of both forms of selected compounds were determined by NMR and affinity capillary electrophoresis with a very good agreement of obtained values. These data were advantageously used for the theoretical descriptions of variations in pH, depending on the composition and concentration of the buffer. Theoretical predictions were shown to be a useful tool for deriving some general rules and laws for complexing systems.

  17. Relaxing a large cosmological constant

    International Nuclear Information System (INIS)

    Bauer, Florian; Sola, Joan; Stefancic, Hrvoje

    2009-01-01

    The cosmological constant (CC) problem is the biggest enigma of theoretical physics ever. In recent times, it has been rephrased as the dark energy (DE) problem in order to encompass a wider spectrum of possibilities. It is, in any case, a polyhedric puzzle with many faces, including the cosmic coincidence problem, i.e. why the density of matter ρ m is presently so close to the CC density ρ Λ . However, the oldest, toughest and most intriguing face of this polyhedron is the big CC problem, namely why the measured value of ρ Λ at present is so small as compared to any typical density scale existing in high energy physics, especially taking into account the many phase transitions that our Universe has undergone since the early times, including inflation. In this Letter, we propose to extend the field equations of General Relativity by including a class of invariant terms that automatically relax the value of the CC irrespective of the initial size of the vacuum energy in the early epochs. We show that, at late times, the Universe enters an eternal de Sitter stage mimicking a tiny positive cosmological constant. Thus, these models could be able to solve the big CC problem without fine-tuning and have also a bearing on the cosmic coincidence problem. Remarkably, they mimic the ΛCDM model to a large extent, but they still leave some characteristic imprints that should be testable in the next generation of experiments.

  18. The effects of progressive muscle relaxation and autogenic relaxation on young soccer players' mood states.

    Science.gov (United States)

    Hashim, Hairul Anuar; Hanafi Ahmad Yusof, Hazwani

    2011-06-01

    This study was designed to compare the effects of two different relaxation techniques, namely progressive muscle relaxation (PMR) and autogenic relaxation (AGR) on moods of young soccer players. sixteen adolescent athletes (mean age: 14.1 ± 1.3) received either PMR or AGR training. Using Profile of Mood States- Adolescents, their mood states were measured one week before relaxation training, before the first relaxation session, and after the twelfth relaxation session. Mixed ANOVA revealed no significant interaction effects and no significant main effects in any of the subscales. However, significant main effects for testing sessions were found for confusion, depression, fatigue, and tension subscales. Post hoc tests revealed post-intervention reductions in the confusion, depression, fatigue, and tension subscale scores. These two relaxation techniques induce equivalent mood responses and may be used to regulate young soccer players' mood states.

  19. The Effects of Progressive Muscle Relaxation and Autogenic Relaxation on Young Soccer Players’ Mood States

    Science.gov (United States)

    Hashim, Hairul Anuar; Hanafi@Ahmad Yusof, Hazwani

    2011-01-01

    Purpose This study was designed to compare the effects of two different relaxation techniques, namely progressive muscle relaxation (PMR) and autogenic relaxation (AGR) on moods of young soccer players. Methods Sixteen adolescent athletes (mean age: 14.1 ± 1.3) received either PMR or AGR training. Using Profile of Mood States- Adolescents, their mood states were measured one week before relaxation training, before the first relaxation session, and after the twelfth relaxation session. Results Mixed ANOVA revealed no significant interaction effects and no significant main effects in any of the subscales. However, significant main effects for testing sessions were found for confusion, depression, fatigue, and tension subscales. Post hoc tests revealed post-intervention reductions in the confusion, depression, fatigue, and tension subscale scores. Conclusion These two relaxation techniques induce equivalent mood responses and may be used to regulate young soccer players’ mood states. PMID:22375225

  20. Further improvements in competitive guarantees for QoS buffering

    NARCIS (Netherlands)

    Bansal, N.; Fleischer, L.K.; Kimbrel, T.; Mahdian, M.; Schieber, B.; Sviridenko, M.; Diaz, J.; Karhumäki, J.; Lepistö, A.; Sannella, D.

    2004-01-01

    We study the behavior of algorithms for buffering packets weighted by different levels of Quality of Service (QoS) guarantees in a single queue. Buffer space is limited, and packet loss occurs when the buffer overflows. We describe a modification of the previously proposed ``preemptive greedy{''}

  1. Towards Optimal Buffer Size in Wi-Fi Networks

    KAUST Repository

    Showail, Ahmad J.

    2016-01-19

    Buffer sizing is an important network configuration parameter that impacts the quality of data traffic. Falling memory cost and the fallacy that ‘more is better’ lead to over provisioning network devices with large buffers. Over-buffering or the so called ‘bufferbloat’ phenomenon creates excessive end-to-end delay in today’s networks. On the other hand, under-buffering results in frequent packet loss and subsequent under-utilization of network resources. The buffer sizing problem has been studied extensively for wired networks. However, there is little work addressing the unique challenges of wireless environment. In this dissertation, we discuss buffer sizing challenges in wireless networks, classify the state-of-the-art solutions, and propose two novel buffer sizing schemes. The first scheme targets buffer sizing in wireless multi-hop networks where the radio spectral resource is shared among a set of con- tending nodes. Hence, it sizes the buffer collectively and distributes it over a set of interfering devices. The second buffer sizing scheme is designed to cope up with recent Wi-Fi enhancements. It adapts the buffer size based on measured link characteristics and network load. Also, it enforces limits on the buffer size to maximize frame aggregation benefits. Both mechanisms are evaluated using simulation as well as testbed implementation over half-duplex and full-duplex wireless networks. Experimental evaluation shows that our proposal reduces latency by an order of magnitude.

  2. Managing Multiuser Database Buffers Using Data Mining Techniques

    NARCIS (Netherlands)

    Feng, L.; Lu, H.J.

    2004-01-01

    In this paper, we propose a data-mining-based approach to public buffer management for a multiuser database system, where database buffers are organized into two areas – public and private. While the private buffer areas contain pages to be updated by particular users, the public

  3. Heed the head: buffer benefits along headwater streams

    Science.gov (United States)

    Rhonda Mazza; Deanna (Dede) Olson

    2015-01-01

    Since the Northwest Forest Plan implemented riparian buffers along non-fish bearing streams in 1994, there have been questions about how wide those buffers need to be to protect aquatic and riparian resources from upland forest management activities. The Density Management and Riparian Buffer Study of western Oregon, also initiated in 1994, examines the effects of...

  4. Concentrated flow paths in riparian buffer zones of southern Illinois

    Science.gov (United States)

    R.C. Pankau; J.E. Schoonover; K.W.J. Willard; P.J. Edwards

    2012-01-01

    Riparian buffers in agricultural landscapes should be designed to trap pollutants in overland flow by slowing, filtering, and infiltrating surface runoff entering the buffer via sheet flow. However, observational evidence suggests that concentrated flow is prevalent from agricultural fields. Over time sediment can accumulate in riparian buffers forming berms that...

  5. Stream water responses to timber harvest: Riparian buffer width effectiveness

    Science.gov (United States)

    Barton D. Clinton

    2011-01-01

    Vegetated riparian buffers are critical for protecting aquatic and terrestrial processes and habitats in southern Appalachian ecosystems. In this case study, we examined the effect of riparian buffer width on stream water quality following upland forest management activities in four headwater catchments. Three riparian buffer widths were delineated prior to cutting; 0m...

  6. Analysis of diffusive mass transport in a cracked buffer

    International Nuclear Information System (INIS)

    Garisto, N.C.; Garisto, F.

    1989-11-01

    In the disposal vault design for the Canadian Nuclear Fuel Waste Management Program, cylindrical containers of used nuclear fuel would be placed in vertical boreholes in rock and surrounded with a bentonite-based buffer material. The buffer is expected to absorb and/or retard radionuclides leaching from the fuel after the containers fail. There is some evidence, however, that the buffer may be susceptible to cracking. In this report we investigate numerically the consequences of cracking on uranium diffusion through the buffer. The derivation of the mass-transport equations and the numerical solution method are presented for the solubility-limited diffusion of uranium in a cracked buffer system for both swept-away and semi-impermeable boundary conditions at the rock-buffer interface. The results indicate that for swept-away boundary conditions the total uranium flux through the cracked buffer system is, as expected, greater than through the uncracked buffer. The effect of the cracks is strongly dependent on the ratio D/D eff , where D and D eff are the pore-water and the effective buffer diffusion coefficient, respectively. However, although a decrease in D eff enhances the effect of cracks on the total cumulative flux (relative to the uncracked buffer), it also decreases the total cumulative flux through the cracked buffer system (relative to a cracked buffer with a larger D eff value). Finally, for semi-impermeable boundary conditions, the effect of cracks on the total radionuclide flux is relatively small

  7. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Rahul, E-mail: rkp203@gmail.com [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Mukhopadhyay, P. [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur 721302 (India); Bag, A.; Jana, S. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Chakraborty, A. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India); Das, S.; Mahata, M. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2015-01-01

    Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate.

  8. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

    International Nuclear Information System (INIS)

    Kumar, Rahul; Mukhopadhyay, P.; Bag, A.; Jana, S. Kr.; Chakraborty, A.; Das, S.; Mahata, M. Kr.; Biswas, D.

    2015-01-01

    Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate

  9. Exchangeability of bentonite buffer and backfill materials

    Energy Technology Data Exchange (ETDEWEB)

    Savage, D. [Savage Earth Associates Ltd, Bournemouth (United Kingdom); Arthur, R. [Intera Inc, Ottawa, ON, (Canada); Luukkonen, A.

    2012-08-15

    Clay-based buffer and tunnel backfill materials are important barriers in the KBS-3 repository concept for final disposal of spent nuclear fuel in Finland. One issue that is relevant to material properties is the degree to which different bentonite compositions can be regarded as interchangeable. In Posiva's current repository design, the reference bentonite composition is MX-80, a sodium montmorillonite dominated clay. Posiva would like to be able to use bentonite with Ca-montmorillonite as the dominant clay mineral. However, at this stage, it is not clear what supporting data need to be acquired/defined to be able to place the state of knowledge of Ca-bentonite at the same level as that of Na-bentonite. In this report, the concept of bentonite exchangeability has been evaluated through consideration of how bentonite behaviour may be affected in six key performance-relevant properties, namely (1) mineralogical composition and availability of materials, (2) hydraulic conductivity, (3) mechanical and rheological properties, (4) long-term alteration, (5) colloidal properties, and (6) swelling pressure. The report evaluates implications for both buffer and backfill. Summary conclusions are drawn from these sections to suggest how bentonite exchangeability may be addressed in regulatory assessments of engineered barrier design for a future geological repository for spent fuel in Finland. Some important conclusions are: (a) There are some fundamental differences between Ca- and Na-bentonites such as colloidal behaviour, pore structure and long-term alteration that could affect the exchangeability of these materials as buffer or backfill materials and which should be further evaluated; (b) Additional experimental data are desirable for some issues such as long-term alteration, hydraulic properties and swelling behaviour, (c) The minor mineral content of bentonites is very variable, both between different bentonites and within the same bentonite type, it is not clear

  10. The effect of fluorine in low thermal budget polysilicon emitters for SiGe heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Schiz, F.J.W.

    1999-03-01

    results are explained by the different evolution of defects in as-deposited α-Si and p-Si. The application of fluorine in low thermal budget polysilicon emitters is demonstrated ill a novel self-aligned SiGe heterojunction bipolar transistor concept which is implemented using selective and non-selective epitaxy. The process has the advantage of layer growth ill a single epitaxy step, no growth interfaces in the depletion regions, and oxide isolation as all intrinsic part of the device structure. The device electrical results demonstrate the feasibility of the transistor concept. A detailed analysis of leakage currents is performed and a correlation made with cross-section TEM micrographs. It is shown that E/C leakage is due to punch through at the perimeter of the transistor where the SiGe base is thinner. E/B is explained by the penetration of the E/B depletion region into the extrinsic at the perimeter of the emitter. By directing the extrinsic base implant into single crystal material at the perimeter of the base, both leakage mechanisms can be avoided. (author)

  11. Effect of Si/Ge ratio on resistivity and thermopower in Gd{sub 5}Si{sub x}Ge{sub 4-x} magnetocaloric compounds

    Energy Technology Data Exchange (ETDEWEB)

    Raj Kumar, D.M. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Manivel Raja, M., E-mail: mraja@dmrl.drdo.i [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Prabahar, K.; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Poddar, Asok; Ranganathan, R. [Saha Institute of Nuclear Physics, Kolkata 700064 (India); Suresh, K.G. [Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2011-07-15

    The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd{sub 5}(Si,Ge){sub 4}-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of -8 {mu}V/K was obtained at the magneto-structural transition for the x=2 compound. - Research highlights: Effect of Si/Ge ratio on microstructure, magneto-structural transitions, resistivity ({rho}) and thermopower S(T) behaviour has been investigated in Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7, 2.0, 2.2 and 2.3. Microstructural studies reveal the presence of a Gd{sub 5}(Si,Ge){sub 4} -matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The resistivity behaviour has shown good correlation with the microstructural studies. A large change in thermopower of -8{mu}V/K was obtained at the magneto-structural transition for the x=2 compound. The resistivity and change in thermopower values were high for the alloys with Si/Ge ratio {<=}1 compared to that of the alloys with Si/Ge ratio >1.

  12. Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada

    Directory of Open Access Journals (Sweden)

    Rodríguez, A.

    2004-04-01

    Full Text Available The hydrogenation of polycrystalline SiGe layers, obtained by solid phase crystallization, by an electron ciclotron resonance hydrogen plasma and the influence of this hydrogenation process on the electrical characteristics of thin film transistors fabricated using this material as active layer have been studied. The hydrogenation processes were carried out at 150 and 250 ºC for several times, up to 11 hours. Infrared transmission spectra of these samples show only the absorption bands corresponding to Si-H bonds, indicating that hydrogen atoms are bonded mainly to silicon atoms. Ultraviolet reflectance measurements show that the surface damage caused by the plasma exposure increases as the Ge content of the film does. The transistors fabricated using polycrystalline SiGe films as active layer show a degradation phenomenon, consisting of a progressive decrease of the drain current at constant gate and drain bias. The degradation slows down as the hydrogenation time increases at constant temperature.

    En este trabajo se ha caracterizado el proceso de hidrogenación en un plasma generado por resonancia ciclotrónica de electrones de capas de SiGe policristalino obtenidas mediante cristalización en fase sólida y el efecto de la hidrogenación en las características eléctricas de transistores de película delgada fabricados usando dicho material. Los procesos de hidrogenación se realizaron a 150 y 250 ºC, con duraciones de hasta 11 horas. Los espectros de transmitancia en infrarrojo muestran solamente las bandas de absorción características de los enlaces Si-H. Estas bandas indican que el hidrógeno se incorpora al material enlazándose principalmente con los átomos de silicio. Las medidas de reflectancia en el ultravioleta indican que se crea daño en la superficie de la muestra y que éste aumenta a medida que lo hace el contenido en Ge. Los transistores de película delgada con capa activa de SiGe policristalino muestran un fen

  13. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  14. Zeeman relaxation of MnH (X7Σ+) in collisions with 3He: Mechanism and comparison with experiment

    International Nuclear Information System (INIS)

    Turpin, F.; Stoecklin, T.; Halvick, Ph.

    2011-01-01

    We present a theoretical study of the Zeeman relaxation of the magnetically trappable lowest field seeking state of MnH ( 7 Σ) in collisions with 3 He. We analyze the collisional Zeeman transition mechanism as a function of the final diatomic state and its variation as a function of an applied magnetic field. We show that as a result of this mechanism the levels with ΔM j >2 give negligible contributions to the Zeemam relaxation cross section. We also compare our results to the experimental cross sections obtained from the buffer-gas cooling and magnetic trapping of this molecule and investigate the dependence of the Zeeman relaxation cross section on the accuracy of the three-body interaction at ultralow energies.

  15. Zeeman relaxation of MnH (X7Σ+) in collisions with He3: Mechanism and comparison with experiment

    Science.gov (United States)

    Turpin, F.; Stoecklin, T.; Halvick, Ph.

    2011-03-01

    We present a theoretical study of the Zeeman relaxation of the magnetically trappable lowest field seeking state of MnH (7Σ) in collisions with He3. We analyze the collisional Zeeman transition mechanism as a function of the final diatomic state and its variation as a function of an applied magnetic field. We show that as a result of this mechanism the levels with ΔMj>2 give negligible contributions to the Zeemam relaxation cross section. We also compare our results to the experimental cross sections obtained from the buffer-gas cooling and magnetic trapping of this molecule and investigate the dependence of the Zeeman relaxation cross section on the accuracy of the three-body interaction at ultralow energies.

  16. Relaxation of polarized nuclei in superconducting rhodium

    DEFF Research Database (Denmark)

    Knuuttila, T.A.; Tuoriniemi, J.T.; Lefmann, K.

    2000-01-01

    Nuclear spin lattice relaxation rates were measured in normal and superconducting (sc) rhodium with nuclear polarizations up to p = 0.55. This was sufficient to influence the sc state of Rh, whose T, and B-c, are exceptionally low. Because B-c ... is unchanged, the nuclear spin entropy was fully sustained across the sc transition. The relaxation in the sc state was slower at all temperatures without the coherence enhancement close to T-c. Nonzero nuclear polarization strongly reduced the difference between the relaxation rates in the sc and normal...

  17. Spin relaxation in nanowires by hyperfine coupling

    International Nuclear Information System (INIS)

    Echeverria-Arrondo, C.; Sherman, E.Ya.

    2012-01-01

    Hyperfine interactions establish limits on spin dynamics and relaxation rates in ensembles of semiconductor quantum dots. It is the confinement of electrons which determines nonzero hyperfine coupling and leads to the spin relaxation. As a result, in nanowires one would expect the vanishing of this effect due to extended electron states. However, even for relatively clean wires, disorder plays a crucial role and makes electron localization sufficient to cause spin relaxation on the time scale of the order of 10 ns. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Le Chatelier's principle with multiple relaxation channels

    Science.gov (United States)

    Gilmore, R.; Levine, R. D.

    1986-05-01

    Le Chatelier's principle is discussed within the constrained variational approach to thermodynamics. The formulation is general enough to encompass systems not in thermal (or chemical) equilibrium. Particular attention is given to systems with multiple constraints which can be relaxed. The moderation of the initial perturbation increases as additional constraints are removed. This result is studied in particular when the (coupled) relaxation channels have widely different time scales. A series of inequalities is derived which describes the successive moderation as each successive relaxation channel opens up. These inequalities are interpreted within the metric-geometry representation of thermodynamics.

  19. Universal Mechanism of Spin Relaxation in Solids

    Science.gov (United States)

    Chudnovsky, Eugene

    2006-03-01

    Conventional elastic theory ignores internal local twists and torques. Meantime, spin-lattice relaxation is inherently coupled with local elastic twists through conservation of the total angular momentum (spin + lattice). This coupling gives universal lower bound (free of fitting parameters) on the relaxation of the atomic or molecular spin in a solid [1] and on the relaxation of the electron spin in a quantum dot [2]. [1] E. M. Chudnovsky, D. A. Garanin, and R. Schilling, Phys. Rev. B 72, 094426 (2005). [2] C. Calero, E. M. Chudnovsky, and D. A. Garanin, Phys. Rev. Lett. 95, 166603 (2005).

  20. Collisional relaxation of electron tail distribution

    International Nuclear Information System (INIS)

    Yamagiwa, Mitsuru; Okamoto, Masao.

    1985-05-01

    Relaxation due to the Coulomb collisions of the electron velocity distribution function with a high energy tail is investigated in detail. In the course of the relaxation, a 'saddle' point can be created in velocity space owing to upsilon -3 dependence of the deflection rate and a positive slope or a 'dip' appears in the tail direction. The time evolution of the electron tail is studied analytically. A comparison is made with numerical results by using a Fokker-Planck code. Also discussed is the kinetic instability concerned with the positive slope during the relaxation. (author)

  1. Nuclear magnetic resonance relaxation in multiple sclerosis

    DEFF Research Database (Denmark)

    Larsson, H B; Barker, G J; MacKay, A

    1998-01-01

    OBJECTIVES: The theory of relaxation processes and their measurements are described. An overview is presented of the literature on relaxation time measurements in the normal and the developing brain, in experimental diseases in animals, and in patients with multiple sclerosis. RESULTS...... AND CONCLUSION: Relaxation time measurements provide insight into development of multiple sclerosis plaques, especially the occurrence of oedema, demyelination, and gliosis. There is also evidence that normal appearing white matter in patients with multiple sclerosis is affected. What is now needed are fast...

  2. Stress Relaxation in Entangled Polymer Melts

    DEFF Research Database (Denmark)

    Hou, Ji-Xuan; Svaneborg, Carsten; Everaers, Ralf

    2010-01-01

    We present an extensive set of simulation results for the stress relaxation in equilibrium and step-strained bead-spring polymer melts. The data allow us to explore the chain dynamics and the shear relaxation modulus, G(t), into the plateau regime for chains with Z=40 entanglements...... and into the terminal relaxation regime for Z=10. Using the known (Rouse) mobility of unentangled chains and the melt entanglement length determined via the primitive path analysis of the microscopic topological state of our systems, we have performed parameter-free tests of several different tube models. We find...

  3. Slow relaxation in weakly open rational polygons.

    Science.gov (United States)

    Kokshenev, Valery B; Vicentini, Eduardo

    2003-07-01

    The interplay between the regular (piecewise-linear) and irregular (vertex-angle) boundary effects in nonintegrable rational polygonal billiards (of m equal sides) is discussed. Decay dynamics in polygons (of perimeter P(m) and small opening Delta) is analyzed through the late-time survival probability S(m) approximately equal t(-delta). Two distinct slow relaxation channels are established. The primary universal channel exhibits relaxation of regular sliding orbits, with delta=1. The secondary channel is given by delta>1 and becomes open when m>P(m)/Delta. It originates from vertex order-disorder dual effects and is due to relaxation of chaoticlike excitations.

  4. [A study on Korean concepts of relaxation].

    Science.gov (United States)

    Park, J S

    1992-01-01

    Relaxation technique is an independent nursing intervention used in various stressful situations. The concept of relaxation must be explored for the meaning given by the people in their traditional thought and philosophy. Korean relaxation technique, wanting to become culturally acceptable and effective, is learning to recognize and develop Korean concepts, experiences, and musics of relaxation. This study was aimed at discovering Korean concepts, experiences and musics of relaxation and contributing the development of the relaxation technique for Korean people. The subjects were 59 nursing students, 39 hospitalized patients, 61 housewives, 21 rural residents and 16 researchers. Data were collected from September 4th to October 24th, 1991 by interviews or questionnaires. The data analysis was done by qualitative research method, and validity assured by conformation of the concept and category by 2 nursing scientists who had written a Master's thesis on the relaxation technique. The results of the study were summarized as follows; 1. The meaning of the relaxation concept; From 298 statements, 107 concepts were extracted and then 5 categories "Physical domain", "Psychological domain", "Complex domain", "Situation", and "environment" were organized. 'Don't have discomforts, 'don't have muscle tension', 'don't have energy (him in Korean)', 'don't have activities' subcategories were included in "Physical domain". 'Don't have anxiety', 'feel good', 'emotional stability', 'don't have wordly thoughts', 'feel one's brain muddled', 'loss of desire' subcategories were included in "physical domain" 'Comfort body and mind', 'don't have tension of body and mind', 'be sagged' 'liveliness of thoughts' subcategories were included in "Complex domain". 'Rest', 'sleep', 'others' subcategories were included in "Situation domain". And 'quite environment' & 'comfortable environment' subcategories were included in "Environmental domain". 2. The experiences of the relaxation; From 151

  5. Oxygen mediates vascular smooth muscle relaxation in hypoxia.

    Directory of Open Access Journals (Sweden)

    Jessica Dada

    Full Text Available The activation of soluble guanylate cyclase (sGC by nitric oxide (NO and other ligands has been extensively investigated for many years. In the present study we considered the effect of molecular oxygen (O2 on sGC both as a direct ligand and its affect on other ligands by measuring cyclic guanosine monophosphate (cGMP production, as an index of activity, as well as investigating smooth muscle relaxation under hypoxic conditions. Our isolated enzyme studies confirm the function of sGC is impaired under hypoxic conditions and produces cGMP in the presence of O2, importantly in the absence of NO. We also show that while O2 could partially affect the magnitude of sGC stimulation by NO when the latter was present in excess, activation by the NO independent, haem-dependent sGC stimulator 3-(5'-hydroxymethyl-2'-furyl-1-benzylindazole (YC-1 was unaffected. Our in vitro investigation of smooth muscle relaxation confirmed that O2 alone in the form of a buffer bolus (equilibrated at 95% O2/5% CO2 had the ability to dilate vessels under hypoxic conditions and that this was dependent upon sGC and independent of eNOS. Our studies confirm that O2 can be a direct and important mediator of vasodilation through an increase in cGMP production. In the wider context, these observations are key to understanding the relative roles of O2 versus NO-induced sGC activation.

  6. A Buffer Management Issue in Designing SSDs for LFSs

    Science.gov (United States)

    Kim, Jaegeuk; Seol, Jinho; Maeng, Seungryoul

    This letter introduces a buffer management issue in designing SSDs for log-structured file systems (LFSs). We implemented a novel trace-driven SSD simulator in SystemC language, and simulated several SSD architectures with the NILFS2 trace. From the results, we give two major considerations related to the buffer management as follows. (1) The write buffer is used as a buffer not a cache, since all write requests are sequential in NILFS2. (2) For better performance, the main architectural factor is the bus bandwidth, but 332MHz is enough. Instead, the read buffer makes a key role in performance improvement while caching data. To enhance SSDs, accordingly, it is an effective way to make efficient read buffer management policies, and one of the examples is tracking the valid data zone in NILFS2, which can increase the data hit ratio in read buffers significantly.

  7. Magnetorheological elastomer and its application on impact buffer

    International Nuclear Information System (INIS)

    Fu, J; Yu, M; Zhu, L X; Dong, X M

    2013-01-01

    In this study, a new magnetorheological elastomer (MRE) based buffer is proposed and its vibration isolation performance is investigated. The MRE buffer with a compact structure is first designed in order to accomplish the maximization of the variable stiffness range. The working characteristics of the MRE buffer are then measured and the model of MRE is established. On the basis of the experimental data, the control model of the MRE buffer is also formulated. A two-degree-of-freedom dynamic model with an MRE buffer is then developed. An intelligent control strategy, human simulated intelligent control (HSIC), is proposed to reduce the impact during the drop crash. Finally, the proposed MRE buffer and controller are validated numerically and experimentally. The results show that the proposed MRE buffer and the control strategy can reduce the impact acceleration effectively.

  8. Buffer layers and articles for electronic devices

    Science.gov (United States)

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  9. Shock buffer for nuclear control element assembly

    International Nuclear Information System (INIS)

    Bevilacqua, F.

    1977-01-01

    A shock buffer for a control element assembly in a nuclear reactor is described, comprising a piston and a cylinder. The piston is affixed to and extends upward from the control rod guide structure; the cylinder is supported by the upper portion of the control element assembly and is vertically oriented with open end downward for receiving the piston. Coolant liquid normally has free access to the cylinder. The piston displaces liquid from the cylinder when inserted, thereby decelerating the control element assembly near its lower extent of travel. (LL)

  10. A 24 GHz integrated SiGe BiCMOS vital signs detection radar front-end

    DEFF Research Database (Denmark)

    Jensen, Brian Sveistrup; Johansen, Tom K.; Zhurbenko, Vitaliy

    2013-01-01

    In this paper a 24 GHz integrated front-end transceiver for vital signs detection (VSD) radars is described. The heterodyne radar transceiver integrates LO buffering and quadrature splitting circuits, up- and down-conversion SSB mixers and two cascaded receiver LNA's. The chip has been manufactured...

  11. Relaxation processes during amorphous metal alloys heating

    International Nuclear Information System (INIS)

    Malinochka, E.Ya.; Durachenko, A.M.; Borisov, V.T.

    1982-01-01

    Behaviour of Te+15 at.%Ge and Fe+13 at.%P+7 at.%C amorphous metal alloys during heating has been studied using the method of differential scanning calorimetry (DSC) as the most convenient one for determination of the value of heat effects, activation energies, temperature ranges of relaxation processes. Thermal effects corresponding to high-temperature relaxation processes taking place during amorphous metal alloys (AMA) heating are detected. The change of ratio of relaxation peaks values on DSC curves as a result of AMA heat treatment can be explained by the presence of a number of levels of inner energy in amorphous system, separated with potential barriers, the heights of which correspond to certain activation energies of relaxation processes

  12. The relaxation of plasmas with dust particles

    International Nuclear Information System (INIS)

    Chutov, Yu.I.; Kravchenko, A.Yu.; Schram, P.P.J.M.

    1997-01-01

    Various parameters of relaxing plasmas with dust particles including the electron and ion energy distributions function are numerically simulated at various parameters of the dust particles using the PIC method and taking into account the dynamics of the dust particle charge without the assumption about the equilibrium of electrons and ions. Coulomb collisions are taken into account in the framework of the method of stochastic differential equations. The relaxation of bounded plasma clouds expanding into a vacuum as well as the relaxation of a uniform plasma, in which dust particles appear at some initial time, are investigated. The obtained results show that the relaxation of plasmas can be accompanied by a deviation of the ion distribution function from equilibrium as well as a change of the mean energy of electrons and ions because of the dependence of the collection of electrons and ions by dust particles on their energy. (author)

  13. Multiscale dipole relaxation in dielectric materials

    DEFF Research Database (Denmark)

    Hansen, Jesper Schmidt

    2016-01-01

    Dipole relaxation from thermally induced perturbations is investigated on different length scales for dielectric materials. From the continuum dynamical equations for the polarisation, expressions for the transverse and longitudinal dipole autocorrelation functions are derived in the limit where ...

  14. Generalized approach to non-exponential relaxation

    Indian Academy of Sciences (India)

    Non-exponential relaxation is a universal feature of systems as diverse as glasses, spin ... which changes from a simple exponential to a stretched exponential and a power law by increasing the constraints in the system. ... Current Issue

  15. Oxygen-17 relaxation in aqueous agarose gels

    International Nuclear Information System (INIS)

    Ablett, S.; Lillford, P.J.

    1977-01-01

    Nuclear magnetic relaxation of oxygen-17 in H 2 17 O enriched agarose gels shows that existing explanations of water behaviour are oversimplified. Satisfactory models must include at least three proton phases, two of which involve water molecules. (Auth.)

  16. Relaxation and hypnosis in pediatric dental patients.

    Science.gov (United States)

    Peretz, B

    1996-01-01

    Relaxation and hypnosis are methods which, may solve the problem of extreme dental anxiety, when all other methods, behavioral or pharmacological may not be used. A simple definition of hypnosis is suggestion and repetition. Suggestion is the process whereby an individual accepts a proposition put to him by another, without having the slightest logical reason for doing so. Relaxation is one method of inducing hypnosis. A case of using hypnosis on an 11-year-old boy is described.

  17. Ghost lines in Moessbauer relaxation spectra

    International Nuclear Information System (INIS)

    Price, D.C.

    1985-01-01

    The appearance in Moessbauer relaxation spectra of 'ghost' lines, which are narrow lines that do not correspond to transitions between real hyperfine energy levels of the resonant system, is examined. It is shown that in many cases of interest, the appearance of these 'ghost' lines can be interpreted in terms of the relaxational averaging of one or more of the static interactions of the ion. (orig.)

  18. Dynamics of helicity transport and Taylor relaxation

    International Nuclear Information System (INIS)

    Diamond, P.H.; Malkov, M.

    2003-01-01

    A simple model of the dynamics of Taylor relaxation is derived using symmetry principles alone. No statistical closure approximations are invoked or detailed plasma model properties assumed. Notably, the model predicts several classes of nondiffusive helicity transport phenomena, including traveling nonlinear waves and superdiffusive turbulent pulses. A universal expression for the scaling of the effective magnetic Reynolds number of a system undergoing Taylor relaxation is derived. Some basic properties of intermittency in helicity transport are examined

  19. Regularities of intermediate adsorption complex relaxation

    International Nuclear Information System (INIS)

    Manukova, L.A.

    1982-01-01

    The experimental data, characterizing the regularities of intermediate adsorption complex relaxation in the polycrystalline Mo-N 2 system at 77 K are given. The method of molecular beam has been used in the investigation. The analytical expressions of change regularity in the relaxation process of full and specific rates - of transition from intermediate state into ''non-reversible'', of desorption into the gas phase and accumUlation of the particles in the intermediate state are obtained

  20. Relaxation of synchronization on complex networks.

    Science.gov (United States)

    Son, Seung-Woo; Jeong, Hawoong; Hong, Hyunsuk

    2008-07-01

    We study collective synchronization in a large number of coupled oscillators on various complex networks. In particular, we focus on the relaxation dynamics of the synchronization, which is important from the viewpoint of information transfer or the dynamics of system recovery from a perturbation. We measure the relaxation time tau that is required to establish global synchronization by varying the structural properties of the networks. It is found that the relaxation time in a strong-coupling regime (K>Kc) logarithmically increases with network size N , which is attributed to the initial random phase fluctuation given by O(N-1/2) . After elimination of the initial-phase fluctuation, the relaxation time is found to be independent of the system size; this implies that the local interaction that depends on the structural connectivity is irrelevant in the relaxation dynamics of the synchronization in the strong-coupling regime. The relaxation dynamics is analytically derived in a form independent of the system size, and it exhibits good consistency with numerical simulations. As an application, we also explore the recovery dynamics of the oscillators when perturbations enter the system.

  1. Stress relaxation in viscous soft spheres.

    Science.gov (United States)

    Boschan, Julia; Vasudevan, Siddarth A; Boukany, Pouyan E; Somfai, Ellák; Tighe, Brian P

    2017-10-04

    We report the results of molecular dynamics simulations of stress relaxation tests in athermal viscous soft sphere packings close to their unjamming transition. By systematically and simultaneously varying both the amplitude of the applied strain step and the pressure of the initial condition, we access both linear and nonlinear response regimes and control the distance to jamming. Stress relaxation in viscoelastic solids is characterized by a relaxation time τ* that separates short time scales, where viscous loss is substantial, from long time scales, where elastic storage dominates and the response is essentially quasistatic. We identify two distinct plateaus in the strain dependence of the relaxation time, one each in the linear and nonlinear regimes. The height of both plateaus scales as an inverse power law with the distance to jamming. By probing the time evolution of particle velocities during relaxation, we further identify a correlation between mechanical relaxation in the bulk and the degree of non-affinity in the particle velocities on the micro scale.

  2. Relaxation strain measurements in cellular dislocation structures

    International Nuclear Information System (INIS)

    Tsai, C.Y.; Quesnel, D.J.

    1984-01-01

    The conventional picture of what happens during a stress relaxation usually involves imagining the response of a single dislocation to a steadily decreasing stress. The velocity of this dislocation decreases with decreasing stress in such a way that we can measure the stress dependence of the dislocation velocity. Analysis of the data from a different viewpoint enables us to calculate the apparent activation volume for the motion of the dislocation under the assumption of thermally activated glie. Conventional thinking about stress relaxation, however, does not consider the eventual fate of this dislocation. If the stress relaxes to a low enough level, it is clear that the dislocation must stop. This is consistent with the idea that we can determine the stress dependence of the dislocation velocity from relaxation data only for those cases where the dislocation's velocity is allowed to approach zero asymptotically, in short, for those cases where the dislocation never stops. This conflict poses a dilemma for the experimentalist. In real crystals, however, obstacles impede the dislocation's progress so that those dislocations which are stopped at a given stress will probably never resume motion under the influence of the steadily declining stress present during relaxation. Thus one could envision stress relaxation as a process of exhaustion of mobile dislocations, rather than a process of decreasing dislocation velocity. Clearly both points of view have merit and in reality both mechanisms contribute to the phenomena

  3. Clad buffer rod sensors for liquid metals

    International Nuclear Information System (INIS)

    Jen, C.-K.; Ihara, I.

    1999-01-01

    Clad buffer rods, consisting of a core and a cladding, have been developed for ultrasonic monitoring of liquid metal processing. The cores of these rods are made of low ultrasonic-loss materials and the claddings are fabricated by thermal spray techniques. The clad geometry ensures proper ultrasonic guidance. The lengths of these rods ranges from tens of centimeters to 1m. On-line ultrasonic level measurements in liquid metals such as magnesium at 700 deg C and aluminum at 960 deg C are presented to demonstrate their operation at high temperature and their high ultrasonic performance. A spherical concave lens is machined at the rod end for improving the spatial resolution. High quality ultrasonic images have been obtained in the liquid zinc at 600 deg C. High spatial resolution is needed for the detection of inclusions in liquid metals during processing. We also show that the elastic properties such as density, longitudinal and shear wave velocities of liquid metals can be measured using a transducer which generates and receives both longitudinal and shear waves and is mounted at the end of a clad buffer rod. (author)

  4. Unsaturated hydraulic property of buffer material

    International Nuclear Information System (INIS)

    Suzuki, Hideaki; Fujita, Tomoo

    1999-09-01

    After emplacement of the engineered barrier system (EBS), it is expected that the near-field environment will be impacted by phenomena such as heat dissipation by conduction and other heat transfer mechanism, infiltration of groundwater from the surrounding rock into the EBS, generation of swelling pressure in the buffer due to water infiltration and the stress imposed by the overburden pressure. These phenomena are not all independent, but can be strongly influenced by, and coupled with, each other. Evaluating these coupled thermo-hydro-mechanical phenomena is important in order to clarify the initial transient behavior of the engineered barrier system within the near-field. This report describes the results on measurement of chemical potential, water diffusivity, and thermal water diffusivity of bentonite that is considered as a candidate material of buffer and on comparison between measurements and theoretical studies for these properties. The following results are identified; (l) The hysteresis of chemical potential in wet and dry conditions for compacted bentonite is not shown clearly. The chemical potential depends on temperature and amount of montmorillonite. When chemical potential of compacted bentonite is zero, the specimen is saturated. The van Genuchten model is applicable to the measured chemical potential of compacted bentonite. (2) The Darcy's law and Philip and de Vries model are applicable to the measured water diffusivity and thermal water diffusivity of compacted bentonite. (author)

  5. Effects of buffer layer on the structural and electrical properties of InAsSb epilayers grown on GaAs(001)

    International Nuclear Information System (INIS)

    Jayavel, P.; Nakamura, S.; Koyama, T.; Hayakawa, Y.

    2006-01-01

    InAsSb ternary epilayers with arsenic composition of 0.5 have been grown on GaAs(001) substrates. Linear-graded and step-graded InAsSb buffer layers with an InSb layer have been used to relax lattice mismatch between the epilayer and substrate. X-ray diffraction results of the epilayers indicate that an enhancement in the peak intensity of the buffer layer samples is due to improved crystalline quality of the epilayers. We find that the growth technique of the buffer layer strongly influences the surface morphology and roughness of the epilayer. Hall effect measurements of the step-graded buffer layer samples show an order of magnitude higher electron mobility than the direct and linear-graded buffer layer samples. These results demonstrate that high crystalline quality and electron mobility of the InAs 0.5 Sb 0.5 ternary epilayers can be achieved by using the step-graded InAsSb buffer layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

    Science.gov (United States)

    Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

    2010-10-01

    Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

  7. $^{31}$Si Self-Diffusion in Si-Ge Alloys and Si-(B-)C-N Ceramics and Diffusion Studies for Al and Si Beam Developments

    CERN Multimedia

    Nylandsted larsen, A; Voss, T L; Strohm, A

    2002-01-01

    An invaluable method for studying diffusion in solids is the radiotracer technique. However, its applicability had been restricted to radiotracer atoms with half-lives $t_{1/2}$ of about 1~d or longer. Within the framework of IS372 a facility was developed in which short-lived radiotracer atoms ( 5min $\\scriptstyle{\\lesssim}$ $t_{1/2}\\scriptstyle{\\lesssim}$1 d ) can be used. For the implantation of the short-lived tracers the facility is flanged to the ISOLDE beamline, and all post-implantation steps required in the radiotracer technique are done in situ.\\\\ After successful application of this novel technique in diffusion studies of $^{11}$C ($t_{1/2}$ = 20.3 min), this experiment aims at performing self-diffusion studies of $^{31}$Si ($t_{1/2}$ = 2.6~h) in Si--Ge alloys and in amorphous Si--(B--)C--N ceramics.\\\\ Our motivation for measuring diffusion in Si--Ge alloys is their recent technological renaissance as well as the purpose to test the prediction that in these alloys the self-diffusion mechanism chang...

  8. The use of 0.01M phosphate buffered saline as detection buffer for ...

    African Journals Online (AJOL)

    Insufficient supply of manufacture's buffers/diluents in relation to the number of strips per kit has been found to have negative impact on patients' results. Some laboratories personnel tend to use diluents from other rapid tests manufacturers such as Bioline, Unigold as well as malaria rapid diagnostic test (MRDT). This study ...

  9. Vegetative buffer strips for reducing herbicide transport in runoff: effects of buffer width, vegetation, and season

    Science.gov (United States)

    The effect of vegetative buffer strip (VBS) width, vegetation, and season of the year on herbicide transport in runoff has not been well documented for runoff prone soils. A multi-year replicated plot-scale study was conducted on an eroded claypan soil with the following objectives: 1) assess the ef...

  10. Buffer Sizing in 802.11 Wireless Mesh Networks

    KAUST Repository

    Jamshaid, Kamran; Shihada, Basem; Xia, Li; Levis, Philip

    2011-01-01

    We analyze the problem of buffer sizing for TCP flows in 802.11-based Wireless Mesh Networks. Our objective is to maintain high network utilization while providing low queueing delays. The problem is complicated by the time-varying capacity of the wireless channel as well as the random access mechanism of 802.11 MAC protocol. While arbitrarily large buffers can maintain high network utilization, this results in large queueing delays. Such delays may affect TCP stability characteristics, and also increase queueing delays for other flows (including real-time flows) sharing the buffer. In this paper we propose sizing link buffers collectively for a set of nodes within mutual interference range called the 'collision domain'. We aim to provide a buffer just large enough to saturate the available capacity of the bottleneck collision domain that limits the carrying capacity of the network. This neighborhood buffer is distributed over multiple nodes that constitute the network bottleneck; a transmission by any of these nodes fully utilizes the available spectral resource for the duration of the transmission. We show that sizing routing buffers collectively for this bottleneck allows us to have small buffers (as low as 2 - 3 packets) at individual nodes without any significant loss in network utilization. We propose heuristics to determine these buffer sizes in WMNs. Our results show that we can reduce the end-to-end delays by 6× to 10× at the cost of losing roughly 5% of the network capacity achievable with large buffers.

  11. Buffer Sizing in 802.11 Wireless Mesh Networks

    KAUST Repository

    Jamshaid, Kamran

    2011-10-01

    We analyze the problem of buffer sizing for TCP flows in 802.11-based Wireless Mesh Networks. Our objective is to maintain high network utilization while providing low queueing delays. The problem is complicated by the time-varying capacity of the wireless channel as well as the random access mechanism of 802.11 MAC protocol. While arbitrarily large buffers can maintain high network utilization, this results in large queueing delays. Such delays may affect TCP stability characteristics, and also increase queueing delays for other flows (including real-time flows) sharing the buffer. In this paper we propose sizing link buffers collectively for a set of nodes within mutual interference range called the \\'collision domain\\'. We aim to provide a buffer just large enough to saturate the available capacity of the bottleneck collision domain that limits the carrying capacity of the network. This neighborhood buffer is distributed over multiple nodes that constitute the network bottleneck; a transmission by any of these nodes fully utilizes the available spectral resource for the duration of the transmission. We show that sizing routing buffers collectively for this bottleneck allows us to have small buffers (as low as 2 - 3 packets) at individual nodes without any significant loss in network utilization. We propose heuristics to determine these buffer sizes in WMNs. Our results show that we can reduce the end-to-end delays by 6× to 10× at the cost of losing roughly 5% of the network capacity achievable with large buffers.

  12. Experiments on thermal conductivity in buffer materials for geologic repository

    International Nuclear Information System (INIS)

    Kanno, T.; Yano, T.; Wakamatsu, H.; Matsushima, E.

    1989-01-01

    Engineered barriers for geologic disposal for HLW are planned to consist of canister, overpack and buffer elements. One of important physical characteristics of buffer materials is determining temperature profiles within the near field in a repository. Buffer materials require high thermal conductivity to disperse radiogenic heat away to the host rock. As the buffer materials, compacted blocks of the mixture of sodium bentonite and sand have been the most promising candidate in some countries, e.g. Sweden, Switzerland and Japan. The authors have been carrying out a series of thermal dispersion experiments to evaluate thermal conductivity of bentonite/quartz sand blocks. In this study, the following two factors considered to affect thermal properties of the near field were examined: effective thermal conductivities of buffer materials, and heat transfer characteristics of the gap between overpack and buffer materials

  13. Moisture buffering capacity of highly absorbing materials

    Energy Technology Data Exchange (ETDEWEB)

    Cerolini, S.; D' Orazio, M.; Stazi, A. [Department of Architecture, Construction and Structures (DACS), Faculty of Engineering, Polytechnic University of Marche, Via Brecce Bianche, 60100 Ancona (Italy); Di Perna, C. [Department of Energetics, Faculty of Engineering, Polytechnic University of Marche, Via Brecce Bianche, 60100 Ancona (Italy)

    2009-02-15

    This research investigates the possibility to use highly absorbing materials to dampen indoor RH% variations. The practical MBV of sodium polyacrylate, cellulose-based material, perlite and gypsum is evaluated for a daily cyclic exposure that alternates high (75%) and low (33%) RH% levels for 8 h and 16 h, respectively. The adjustment velocity to RH% variations and the presence of hysteretic phenomena are also presented. The cellulose-based material proves to be the most suitable for moisture buffering applications. Starting from this material's properties, the effect of thickness, vapour resistance factor ({mu}) and mass surface exchange coefficient (Z{sub v}) on sorption capacity is evaluated by the use of a numerical model. (author)

  14. A high capacity FASTBUS multiple event buffer

    International Nuclear Information System (INIS)

    Appel, J.A.; Farr, W.D.; Kaplan, D.M.; Levit, L.B.; Napier, T.M.

    1985-01-01

    We have developed a front-end data acquisition and event buffering memory. This single-width FASTBUS module has a capacity of 256K X 32 bits plus parity. The module is dual ported, and its front panel ECLport accepts data at up to 20 MB/sec. It may also be written to and read from as a standard FASTBUS Slave. The module records events as variable length records. Each record is accepted or rejected via front panel control signal. Circuitry to automate FASTBUS record readout and record skip is provided. In its ''linear'' mode, the module may be used as a single pass list. Alternatively, in the ''circular'' mode, the module's internal read pointer can follow its write pointer continuously around the memory. Circular mode is well suited to handling of a continuous data stream. Modules may be linked for larger memory capacity

  15. Buffer mass test - Heater design and operation

    International Nuclear Information System (INIS)

    Nilsson, J.; Ramqvist, G.; Pusch, R.

    1984-06-01

    The nuclear waste is assumed to be contained in cylindrical metal canisters which will be inserted in deposition holes. Heat is generated as a result of the continuing decay of the radioactive waste and in the Buffer Mass Test (BMT) the heat flux expected from such canisters was simulated by the use of six electric heaters. the heaters were constructed partly of aluminium and partly of stainless steel. They are 1520 mm in length and 380 mm in diameter, and give a maximum power output of 3000 W. The heater power can be monitored by panel meters coupled to a computer-based data acquisition system. Both the heater and the control system were manufactured with a high degree of redundancy in case of component failure. This report describes the design, construction, testing, installation and necessary tools for heater installation and dismantling operation. (author)

  16. Use of relaxation skills in differentially skilled athletes.

    OpenAIRE

    Kudlackova, K.; Eccles, D. W.; Dieffenbach, K.

    2013-01-01

    Objectives: To examine the use of relaxation skills by differentially skilled athletes in relation to the deliberate practice framework. Design: Differentially skilled athletes completed a survey about their use of relaxation skills. Method: 150 athletes representing three skill levels (recreational, college, and professional) completed the deliberate relaxation for sport survey, which assessed relaxation on three deliberate practice dimensions (relevancy, concentration, and ...

  17. The use of (double) relaxation oscillation SQUIDs as a sensor

    NARCIS (Netherlands)

    van Duuren, M.J.; Brons, G.C.S.; Kattouw, H.; Flokstra, Jakob; Rogalla, Horst

    1997-01-01

    Relaxation Oscillation SQUIDs (ROSs) and Double Relaxation Oscillation SQUIDs (DROSs) are based on relaxation oscillations that are induced in hysteretic dc SQUIDs by an external L-R shunt. The relaxation frequency of a ROS varies with the applied flux Φ, whereas the output of a DROS is a dc

  18. A study on manufacturing and construction method of buffer

    International Nuclear Information System (INIS)

    Chijimatsu, Masakazu; Sugita, Yutaka; Amemiya, Kiyoshi

    1999-09-01

    As an engineered barrier system in the geological disposal of high-level waste, multibarrier system is considered. Multibarrier system consists of the vitrified waste, the overpack and the buffer. Bentonite is one of the potential material as the buffer because of its low water permeability, self-sealing properties, radionuclides adsorption and retardation properties, thermal conductivity, chemical buffering properties, overpack supporting properties, stress buffering properties, etc. In order to evaluate the functions of buffer, a lot of experiments has been conducted. The evaluations of these functions are based on the assumption that the buffer is emplaced or constructed in the disposal tunnel (or disposal pit) properly. Therefore, it is necessary to study on the manufacturing / construction method of buffer. As the manufacturing / construction technology of the buffer, the block installation method and in-situ compaction method, etc, are being investigated. The block installation method is to emplace the buffer blocks manufactured in advance at the ground facility, and construction processes of the block installation method at the underground will be simplified compared with the in-situ compaction method. On the other hand, the in-situ compaction method is to introduce the buffer material with specified water content into the disposal tunnel and to make the buffer with high density at the site using a compaction machine. In regard to the in-situ compaction method, it is necessary to investigate the optimum finished thickness of one layer because it is impossible to construct the buffer at one time. This report describes the results of compaction property test and the summary of the past investigation results in connection with the manufacturing / construction method. Then this report shows the construction method that will be feasible in the actual disposal site. (J.P.N.)

  19. Influence of airborne pollen counts and length of pollen season of selected allergenic plants on the concentration of sIgE antibodies on the population of Bratislava, Slovakia

    Directory of Open Access Journals (Sweden)

    Jana Ščevková

    2015-09-01

    Full Text Available Introduction and objective. The association between airborne pollen counts or duration of pollen season and allergy symptoms is not always distinguished. The purpose of this study was to examine the correlation between pollen exposure (annual total pollen quantity and main pollen season length of selected allergenic plants in the atmosphere of Bratislava, and concentration of allergen-specific immunoglobulin E (sIgE in serum of patients with seasonal allergy during 2002–2003. Materials and methods. The concentration of pollen was monitored by a Burkard volumetric pollen trap. At the same time, 198 pollen allergic patients were testing to determine the values of sIgE antibodies against selected pollen allergens; a panel of 8 purified allergens was used. Results. The highest percentages of sensitization were detected for Poaceae and [i]Ambrosia[/i] pollen allergens. The most abundant airborne pollen types were Urticaceae, [i]Betula[/i], [i]Populus[/i], Fraxinus, Pinus and Poaceae. The length of the pollen season varied. The longest pollen season was that of the [i]Plantago[/i] – 105 days, and the shortest, [i]Corylus[/i] – 20 days. A significant correlation was found between annual total pollen quantity and median sIgE values, especially in 2002. Conclusions. A strong and significant positive correlation was observed between pollen counts, excluding [i]Betula[/i], and sIgE levels in both analysed years. The correlation was weaker and negative in the case of length of pollen season and sIgE values.

  20. Moisture Buffer Effect and its Impact on Indoor Environment

    DEFF Research Database (Denmark)

    Zhang, Mingjie; Qin, Menghao; Chen, Zhi

    2017-01-01

    The moisture buffer effect of building materials may have great influence on indoor hygrothermal environment. In order to characterize the moisture buffering ability of materials, the basic concept of moisture buffer value (MBV) is adopted. Firstly, a theoretical correction factor is introduced...... in this paper. The moisture uptake/release by hygroscopic materials can be calculated with the factor and the basic MBV. Furthermore, the validation of the correction factor is carried out. The impact of moisture buffering on indoor environment is assessed by using numerical simulations. The results show...

  1. Effects of node buffer and capacity on network traffic

    International Nuclear Information System (INIS)

    Ling Xiang; Ding Jian-Xun; Hu Mao-Bin

    2012-01-01

    In this paper, we study the optimization of network traffic by considering the effects of node buffer ability and capacity. Two node buffer settings are considered. The node capacity is considered to be proportional to its buffer ability. The node effects on network traffic systems are studied with the shortest path protocol and an extension of the optimal routing [Phys. Rev. E 74 046106 (2006)]. In the diagrams of flux—density relationships, it is shown that a nodes buffer ability and capacity have profound effects on the network traffic

  2. Back contact buffer layer for thin-film solar cells

    Science.gov (United States)

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  3. Solubilization of proteins: the importance of lysis buffer choice.

    Science.gov (United States)

    Peach, Mandy; Marsh, Noelle; Miskiewicz, Ewa I; MacPhee, Daniel J

    2015-01-01

    The efficient extraction of proteins of interest from cells and tissues is not always straightforward. Here we demonstrate the differences in extraction of the focal adhesion protein Kindlin-2 from choriocarcinoma cells using NP-40 and RIPA lysis buffer. Furthermore, we demonstrate the use of a more denaturing urea/thiourea lysis buffer for solubilization, by comparing its effectiveness for solubilization of small heat-shock proteins from smooth muscle with the often utilized RIPA lysis buffer. Overall, the results demonstrate the importance of establishing the optimal lysis buffer for specific protein solubilization within the experimental workflow.

  4. How Do Stream Buffers Reduce the Offsite Impact of Pollution?

    OpenAIRE

    Easton, Zachary M.

    2012-01-01

    Summarizes the importance of buffers to reduce pollution and specifically examines where they can be used, how they work, their limitations, required maintenance, performance levels, and expected cost.

  5. Effect of Buffer Bow Structure in Ship-Ship Collision

    DEFF Research Database (Denmark)

    Yamada, Yasuhira; Endo, Hisayoshi; Pedersen, Preben Terndrup

    2008-01-01

    tankers, the introduction of buffer bulbous bows has been proposed. Relatively soft buffer bows absorb part of the kinetic energy of the striking ship before penetrating the inner hull of the struck vessel. The purpose of the present paper is to verify the effectiveness of a prototype buffer bulbous bow......) and the forward velocity of the struck ship on the collapse mode of the bow of the striking vessel are investigated. Collapse modes, contact forces and energy absorption capabilities of the buffer bows are compared with those of conventional bows....

  6. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

    Science.gov (United States)

    Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

    2008-07-01

    Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

  7. Mozart versus new age music: relaxation states, stress, and ABC relaxation theory.

    Science.gov (United States)

    Smith, Jonathan C; Joyce, Carol A

    2004-01-01

    Smith's (2001) Attentional Behavioral Cognitive (ABC) relaxation theory proposes that all approaches to relaxation (including music) have the potential for evoking one or more of 15 factor-analytically derived relaxation states, or "R-States" (Sleepiness, Disengagement, Rested / Refreshed, Energized, Physical Relaxation, At Ease/Peace, Joy, Mental Quiet, Childlike Innocence, Thankfulness and Love, Mystery, Awe and Wonder, Prayerfulness, Timeless/Boundless/Infinite, and Aware). The present study investigated R-States and stress symptom-patterns associated with listening to Mozart versus New Age music. Students (N = 63) were divided into three relaxation groups based on previously determined preferences. Fourteen listened to a 28-minute tape recording of Mozart's Eine Kleine Nachtmusik and 14 listened to a 28-minute tape of Steven Halpern's New Age Serenity Suite. Others (n = 35) did not want music and instead chose a set of popular recreational magazines. Participants engaged in their relaxation activity at home for three consecutive days for 28 minutes a session. Before and after each session, each person completed the Smith Relaxation States Inventory (Smith, 2001), a comprehensive questionnaire tapping 15 R-States as well as the stress states of somatic stress, worry, and negative emotion. Results revealed no differences at Session 1. At Session 2, those who listened to Mozart reported higher levels of At Ease/Peace and lower levels of Negative Emotion. Pronounced differences emerged at Session 3. Mozart listeners uniquely reported substantially higher levels of Mental Quiet, Awe and Wonder, and Mystery. Mozart listeners reported higher levels, and New Age listeners slightly elevated levels, of At Ease/Peace and Rested/Refreshed. Both Mozart and New Age listeners reported higher levels of Thankfulness and Love. In summary, those who listened to Mozart's Eine Kleine Nachtmusik reported more psychological relaxation and less stress than either those who listened to

  8. Temperature buffer test. Installation of buffer, heaters and instruments in the deposition hole

    Energy Technology Data Exchange (ETDEWEB)

    Johannesson, Lars-Erik; Sanden, Torbjoern; Aakesson, Mattias [Clay Technology AB, Lund (Sweden); Barcena, Ignacio; Garcia-Sineriz, Jose Luis [Aitemin, Madrid (Spain)

    2010-12-15

    During 2003 the Temperature Buffer Test was installed in Aespoe Hard Rock Laboratory. Temperature, water pressure, relative humidity, total pressure and displacements etc. are measured in numerous points in the test. Most of the cables from the transducers are led in the deposition hole through slots in the rock surface of the deposition hole in watertight tubes to the data collection system in a container placed in the tunnel close to the deposition hole. This report describes the work with the installations of the buffer, heaters, and instruments and yields a description of the final location of all instruments. The report also contains a description of the materials that were installed and the densities yielded after placement.

  9. Temperature buffer test. Installation of buffer, heaters and instruments in the deposition hole

    International Nuclear Information System (INIS)

    Johannesson, Lars-Erik; Sanden, Torbjoern; Aakesson, Mattias; Barcena, Ignacio; Garcia-Sineriz, Jose Luis

    2010-12-01

    During 2003 the Temperature Buffer Test was installed in Aespoe Hard Rock Laboratory. Temperature, water pressure, relative humidity, total pressure and displacements etc. are measured in numerous points in the test. Most of the cables from the transducers are led in the deposition hole through slots in the rock surface of the deposition hole in watertight tubes to the data collection system in a container placed in the tunnel close to the deposition hole. This report describes the work with the installations of the buffer, heaters, and instruments and yields a description of the final location of all instruments. The report also contains a description of the materials that were installed and the densities yielded after placement

  10. Asymptotic representation of relaxation oscillations in lasers

    CERN Document Server

    Grigorieva, Elena V

    2017-01-01

    In this book we analyze relaxation oscillations in models of lasers with nonlinear elements controlling light dynamics. The models are based on rate equations taking into account periodic modulation of parameters, optoelectronic delayed feedback, mutual coupling between lasers, intermodal interaction and other factors. With the aim to study relaxation oscillations we present the special asymptotic method of integration for ordinary differential equations and differential-difference equations. As a result, they are reduced to discrete maps. Analyzing the maps we describe analytically such nonlinear phenomena in lasers as multistability of large-amplitude relaxation cycles, bifurcations of cycles, controlled switching of regimes, phase synchronization in an ensemble of coupled systems and others. The book can be fruitful for students and technicians in nonlinear laser dynamics and in differential equations.

  11. Relaxation of the magnetization in magnetic molecules

    Science.gov (United States)

    Carretta, S.; Bianchi, A.; Liviotti, E.; Santini, P.; Amoretti, G.

    2006-04-01

    Several mechanisms characterize the relaxation dynamics in magnetic molecules. We investigate two of them, spin-lattice coupling and incoherent quantum tunneling. The effect of the phonon heat bath is studied by analyzing the exponential time decay of the autocorrelation of the magnetization. We show that in ferromagnetic (Cu6) and antiferromagnetic (Fe6) molecular rings this decay is characterized by a single characteristic time. At very low temperature, relaxation through incoherent quantum tunneling may occur in nanomagnets such as Fe8 or Ni4. The mixing between levels with different values of the total spin (S mixing) greatly influences this mechanism. In particular, we demonstrate that a fourth-order anisotropy term O44, required to interpret experimental electron paramagnetic resonance and relaxation data in Ni4, naturally arises when S mixing is considered in calculations.

  12. Excited-state relaxation of some aminoquinolines

    Directory of Open Access Journals (Sweden)

    2006-01-01

    Full Text Available The absorption and fluorescence spectra, fluorescence quantum yields and lifetimes, and fluorescence rate constants ( k f of 2-amino-3-( 2 ′ -benzoxazolylquinoline (I, 2-amino-3-( 2 ′ -benzothiazolylquinoline (II, 2-amino-3-( 2 ′ -methoxybenzothiazolyl-quinoline (III, 2-amino-3-( 2 ′ -benzothiazolylbenzoquinoline (IV at different temperatures have been measured. The shortwavelength shift of fluorescence spectra of compounds studied (23–49 nm in ethanol as the temperature decreases (the solvent viscosity increases points out that the excited-state relaxation process takes place. The rate of this process depends essentially on the solvent viscosity, but not the solvent polarity. The essential increasing of fluorescence rate constant k f (up to about 7 times as the solvent viscosity increases proves the existence of excited-state structural relaxation consisting in the mutual internal rotation of molecular fragments of aminoquinolines studied, followed by the solvent orientational relaxation.

  13. Relaxation oscillation logic in Josephson junction circuits

    International Nuclear Information System (INIS)

    Fulton, T.A.

    1981-01-01

    A dc powered, self-resetting Josephson junction logic circuit relying on relaxation oscillations is described. A pair of Josephson junction gates are connected in series, a first shunt is connected in parallel with one of the gates, and a second shunt is connected in parallel with the series combination of gates. The resistance of the shunts and the dc bias current bias the gates so that they are capable of undergoing relaxation oscillations. The first shunt forms an output line whereas the second shunt forms a control loop. The bias current is applied to the gates so that, in the quiescent state, the gate in parallel with the second shunt is at V O, and the other gate is undergoing relaxation oscillations. By controlling the state of the first gate with the current in the output loop of another identical circuit, the invert function is performed

  14. Muon spin relaxation in ferromagnets. Pt. 1

    International Nuclear Information System (INIS)

    Lovesey, S.W.; Karlsson, E.B.

    1991-04-01

    Expressions for the dipolar and hyperfine contributions to the relaxation rate of muons implanted in a ferromagnet are presented and analysed using the Heisenberg model of spin-waves including dipolar and Zeeman energies. Calculations for EuO indicate that relaxation is likely to be dominated by the hyperfine mechanism, even if the ratio of the hyperfine and dipolar coupling constants is small. The hyperfine mechanism is sensitive to the dipolar energy of the atomic spins, whereas the dipolar mechanisms depend essentially on the exchange energy. For both mechanisms there is an almost quadratic dependence on temperature, throughout much of the ordered magnetic phase, which reflects two-spin-wave difference events from the Raman-type relaxation processes. (author)

  15. Improved memristor-based relaxation oscillator

    KAUST Repository

    Mosad, Ahmed G.

    2013-09-01

    This paper presents an improved memristor-based relaxation oscillator which offers higher frequency and wider tunning range than the existing reactance-less oscillators. It also has the capability of operating on two positive supplies or alternatively a positive and negative supply. Furthermore, it has the advantage that it can be fully integrated on-chip providing an area-efficient solution. On the other hand, The oscillation concept is discussed then a complete mathematical analysis of the proposed oscillator is introduced. Furthermore, the power consumption of the new relaxation circuit is discussed and validated by the PSPICE circuit simulations showing an excellent agreement. MATLAB results are also introduced to demonstrate the resistance range and the corresponding frequency range which can be obtained from the proposed relaxation oscillator. © 2013 Elsevier Ltd.

  16. Relaxation and Diffusion in Complex Systems

    CERN Document Server

    Ngai, K L

    2011-01-01

    Relaxation and Diffusion in Complex Systems comprehensively presents a variety of experimental evidences of universal relaxation and diffusion properties in complex materials and systems. The materials discussed include liquids, glasses, colloids, polymers, rubbers, plastic crystals and aqueous mixtures, as well as carbohydrates, biomolecules, bioprotectants and pharmaceuticals. Due to the abundance of experimental data, emphasis is placed on glass-formers and the glass transition problem, a still unsolved problem in condensed matter physics and chemistry. The evidence for universal properties of relaxation and diffusion dynamics suggests that a fundamental physical law is at work. The origin of the universal properties is traced to the many-body effects of the interaction, rigorous theory of which does not exist at the present time. However, using solutions of simplified models as guides, key quantities have been identified and predictions of the universal properties generated. These predictions from Ngai’...

  17. Electron relaxation properties of Ar magnetron plasmas

    Science.gov (United States)

    Xinjing, CAI; Xinxin, WANG; Xiaobing, ZOU

    2018-03-01

    An understanding of electron relaxation properties in plasmas is of importance in the application of magnetrons. An improved multi-term approximation of the Boltzmann equation is employed to study electron transport and relaxation properties in plasmas. Elastic, inelastic and nonconservative collisions between electrons and neutral particles are considered. The expressions for the transport coefficients are obtained using the expansion coefficients and the collision operator term. Numerical solutions of the matrix equations for the expansion coefficients are also investigated. Benchmark calculations of the Reid model are presented to demonstrate the accuracy of the improved multi-term approximation. It is shown that the two-term approximation is generally not accurate enough and the magnetic fields can reduce the anisotropy of the velocity distribution function. The electron relaxation properties of Ar plasmas in magnetrons for various magnetic fields are studied. It is demonstrated that the energy parameters change more slowly than the momentum parameters.

  18. The buffer/container experiment: results, synthesis, issues

    International Nuclear Information System (INIS)

    Graham, J.; Chandler, N.A.; Dixon, D.A.; Roach, P.J.; To, T.; Wan, A.W.L.

    1997-12-01

    A large in-ground experiment has examined how heat affects the performance of the dense sand bentonite 'buffer' that has been proposed for use in the Canadian Nuclear Fuel Waste Management Program. The experiment was performed by Atomic Energy of Canada Limited at its Underground Research Laboratory, Lac du Bonnet, Manitoba between 1991 and 1994. The experiment placed a full-size heater representing a container of nuclear fuel waste in a 1.24-m diameter borehole filled with buffer below the floor of a room excavated at 240-m depth in granitic rock of the Canadian Shield. The buffer and surrounding rock were extensively instrumented for temperatures, total pressures, water pressures, suctions, and rock displacements. Power was provided to the heater for almost 900 days. The experiment showed that good rock conditions can be pre-selected, a borehole can be drilled, and buffer can be placed at controlled densities and water contents. The instrumentation generally worked well, and an extensive data base was successfully organized. Drying was observed in buffer close to the heater. This caused some desiccation cracking. However the cracks only extended approximately one third of the distance to the buffer-rock interface and did not form an advective pathway. Following sampling at the time of decommissioning, cracked samples of buffer were transported to the laboratory and given access to water. The hydraulic conductivities and swelling pressures of these resaturated samples were very similar to those of uncracked buffer. A good balance was achieved between the mass of water flowing into the experiment from the surrounding rock and the increased mass of water in the buffer. A good understanding was developed of the relationships between suctions, water contents, and total pressures in buffer near the buffer-rock interface. Comparisons between measurements and predictions of measured parameters show that a good understanding has been developed of the processes operating

  19. The buffer/container experiment: results, synthesis, issues

    Energy Technology Data Exchange (ETDEWEB)

    Graham, J. [Univ. of Manitoba, Dept. of Civil Engineering, Winnipeg, MB (Canada); Chandler, N.A.; Dixon, D.A.; Roach, P.J.; To, T.; Wan, A.W.L

    1997-12-01

    A large in-ground experiment has examined how heat affects the performance of the dense sand bentonite 'buffer' that has been proposed for use in the Canadian Nuclear Fuel Waste Management Program. The experiment was performed by Atomic Energy of Canada Limited at its Underground Research Laboratory, Lac du Bonnet, Manitoba between 1991 and 1994. The experiment placed a full-size heater representing a container of nuclear fuel waste in a 1.24-m diameter borehole filled with buffer below the floor of a room excavated at 240-m depth in granitic rock of the Canadian Shield. The buffer and surrounding rock were extensively instrumented for temperatures, total pressures, water pressures, suctions, and rock displacements. Power was provided to the heater for almost 900 days. The experiment showed that good rock conditions can be pre-selected, a borehole can be drilled, and buffer can be placed at controlled densities and water contents. The instrumentation generally worked well, and an extensive data base was successfully organized. Drying was observed in buffer close to the heater. This caused some desiccation cracking. However the cracks only extended approximately one third of the distance to the buffer-rock interface and did not form an advective pathway. Following sampling at the time of decommissioning, cracked samples of buffer were transported to the laboratory and given access to water. The hydraulic conductivities and swelling pressures of these resaturated samples were very similar to those of uncracked buffer. A good balance was achieved between the mass of water flowing into the experiment from the surrounding rock and the increased mass of water in the buffer. A good understanding was developed of the relationships between suctions, water contents, and total pressures in buffer near the buffer-rock interface. Comparisons between measurements and predictions of measured parameters show that a good understanding has been developed of the processes

  20. A versatile digitally-graded buffer structure for metamorphic device applications

    Science.gov (United States)

    Ma, Yingjie; Zhang, Yonggang; Chen, Xingyou; Gu, Yi; Shi, Yanhui; Ji, Wanyan; Du, Ben

    2018-04-01

    Exploring more effective buffer schemes for mitigating dislocation deficiencies is the key technology towards higher performance metamorphic devices. Here we demonstrate a versatile metamorphic grading structure consisting of 38-period alternated multilayers of In0.52Al0.48As and In0.82Al0.18As on InP substrate, thicknesses of which in each period were gradually varied in opposite directions from 48.7 and 1.3 nm to 1.3 and 48.7 nm, respectively, akin to a digital alloy. Both preferentially dislocation nucleation and blocking of threading dislocation transmission are observed near the In0.82Al0.18As/In0.52Al0.48As interfaces, which help relax the strain and lower the residual defect density. A 2.6 μm In0.83Ga0.17As pin photodetector is fabricated on this pseudo-substrate, attaining a low dark current density of 2.9  ×  10‑6 A cm‑2 and a high detectivity of 1.8  ×  1010 cmHz1/2W‑1 at room temperature, comparable with the states of the art that on linearly-graded buffer layers. These results indicate such digitally-graded buffer structures are promising for enhancing performances of metamorphic devices, and can be easily generalized to other lattice-mismatched material systems.

  1. Abrupt relaxation in high-spin molecules

    International Nuclear Information System (INIS)

    Chang, C.-R.; Cheng, T.C.

    2000-01-01

    Mean-field model suggests that the rate of resonant quantum tunneling in high-spin molecules is not only field-dependent but also time-dependent. The relaxation-assisted resonant tunneling in high-spin molecules produces an abrupt magnetization change during relaxation. When the applied field is very close to the resonant field, a time-dependent interaction field gradually shifts the energies of different collective spin states, and magnetization tunneling is observed as two energies of the spin states coincide

  2. Relaxed plasmas in external magnetic fields

    International Nuclear Information System (INIS)

    Spies, G.O.; Li, J.

    1991-08-01

    The well-known theory of relaxed plasmas (Taylor states) is extended to external magnetic fields whose field lines intersect the conducting toroidal boundary. Application to an axially symmetric, large-aspect-ratio torus with circular cross section shows that the maximum pinch ratio, and hence the phenomenon of current saturation, is independent of the external field. The relaxed state is explicitly given for an external octupole field. In this case, field reversal is inhibited near parts of the boundary if the octupole generates magnetic x-points within the plasma. (orig.)

  3. Spin transport and relaxation in graphene

    International Nuclear Information System (INIS)

    Han Wei; McCreary, K.M.; Pi, K.; Wang, W.H.; Li Yan; Wen, H.; Chen, J.R.; Kawakami, R.K.

    2012-01-01

    We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ∼1000 and the spin injection/detection efficiency was greatly enhanced from ∼1% (transparent contacts) to ∼30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes in the order of 100 ps, charged impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the contact-induced spin relaxation, we observed the spin lifetimes as long as 771 ps at room temperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene (BLG). Furthermore, contrasting spin relaxation behaviors were observed in SLG and BLG. We found that Elliot-Yafet spin relaxation dominated in SLG at low temperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at low temperatures. Gate tunable spin transport was studied using the SLG property of gate tunable conductivity and incorporating different types of contacts (transparent and tunneling contacts). Consistent with theoretical predictions, the nonlocal MR was proportional to the SLG conductivity for transparent contacts and varied inversely with the SLG conductivity for tunneling contacts. Finally, bipolar spin transport in SLG was studied and an electron-hole asymmetry was observed for SLG spin valves with transparent contacts, in which nonlocal MR was roughly independent of DC bias current for electrons, but varied significantly with DC bias current for holes. These results are very important for

  4. Nonlocal and collective relaxation in stellar systems

    Science.gov (United States)

    Weinberg, Martin D.

    1993-01-01

    The modal response of stellar systems to fluctuations at large scales is presently investigated by means of analytic theory and n-body simulation; the stochastic excitation of these modes is shown to increase the relaxation rate even for a system which is moderately far from instability. The n-body simulations, when designed to suppress relaxation at small scales, clearly show the effects of large-scale fluctuations. It is predicted that large-scale fluctuations will be largest for such marginally bound systems as forming star clusters and associations.

  5. NMR relaxation times of natural rubber latex

    International Nuclear Information System (INIS)

    Harun, S.; Aziz, H.; Basir, Z.

    1994-01-01

    NMR relaxation times T sub 1 and T sub 2 of natural rubber latex have been measured at 25 degree C on a pulsed NMR spectrometer. The work focuses on the variation of the relaxation times with the amount of water content from 0% to 50%. The water content was adjusted by centrifuging and removing a certain amount of water from the sample. The data were analysed using a biexponential fitting procedure which yields simultaneously either T sub 1a and T sub 1b or T sub 2a and T sub 2b. The amount of solid was compared with the known amount of dry rubber content

  6. Green--Kubo formula for collisional relaxation

    International Nuclear Information System (INIS)

    Visscher, P.B.

    1988-01-01

    In this paper we generalize the Green--Kubo method (usually used for obtaining formulas for transport coefficients involving conserved densities) to relaxation processes occurring during collisions, such as the transfer of energy from vibrational to translational modes in a molecular fluid. We show that the relaxation rate can be calculated without evaluating time correlation functions over long times, and can in fact be written as a sum over collisions which makes the relation between the Green--Kubo method and approximate independent-collision models much clearer

  7. Exciton-relaxation dynamics in lead halides

    International Nuclear Information System (INIS)

    Iwanaga, Masanobu; Hayashi, Tetsusuke

    2003-01-01

    We survey recent comprehensive studies of exciton relaxation in the crystals of lead halides. The luminescence and electron-spin-resonance studies have revealed that excitons in lead bromide spontaneously dissociate and both electrons and holes get self-trapped individually. Similar relaxation has been also clarified in lead chloride. The electron-hole separation is ascribed to repulsive correlation via acoustic phonons. Besides, on the basis of the temperature profiles of self-trapped states, we discuss the origin of luminescence components which are mainly induced under one-photon excitation into the exciton band in lead fluoride, lead chloride, and lead bromide

  8. Point defect relaxation volumes for copper

    International Nuclear Information System (INIS)

    Miller, K.M.

    1979-11-01

    The methods used for the determination of point defect relaxation volumes are discussed and it is shown that a previous interatomic potential derived for copper is inaccurate and results obtained using it are invalid. A new interatomic potential has been produced for copper and a computer simulation of point and planar defects carried out. A vacancy relaxation volume of -0.33 atomic volumes has been found with interstitial values in the range 1.7 to 2.0 atomic volumes. It is shown that these values in current theories of irradiation induced swelling lead to an anomalously high value for dislocation bias compared with that determined experimentally. (author)

  9. Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth.

    Science.gov (United States)

    Zaumseil, P; Yamamoto, Y; Schubert, M A; Capellini, G; Skibitzki, O; Zoellner, M H; Schroeder, T

    2015-09-04

    We investigate the structural properties and strain state of Ge nano-structures selectively grown on Si pillars of about 60 nm diameter with different SiGe buffer layers. A matrix of TEOS SiO2 surrounding the Si nano-pillars causes a tensile strain in the top part at the growth temperature of the buffer that reduces the misfit and supports defect-free initial growth. Elastic relaxation plays the dominant role in the further increase of the buffer thickness and subsequent Ge deposition. This method leads to Ge nanostructures on Si that are free from misfit dislocations and other structural defects, which is not the case for direct Ge deposition on these pillar structures. The Ge content of the SiGe buffer is thereby not a critical parameter; it may vary over a relatively wide range.

  10. Riparian ecosystems and buffers - multiscale structure, function, and management: introduction

    Science.gov (United States)

    Kathleen A. Dwire; Richard R. Lowrance

    2006-01-01

    Given the importance of issues related to improved understanding and management of riparian ecosystems and buffers, the American Water Resources Association (AWRA) sponsored a Summer Specialty Conference in June 2004 at Olympic Valley, California, entitled 'Riparian Ecosystems and Buffers: Multiscale Structure, Function, and Management.' The primary objective...

  11. Universal buffers for use in biochemistry and biophysical experiments

    Directory of Open Access Journals (Sweden)

    Dewey Brooke

    2015-08-01

    Full Text Available The use of buffers that mimic biological solutions is a foundation of biochemical and biophysical studies. However, buffering agents have both specific and nonspecific interactions with proteins. Buffer molecules can induce changes in conformational equilibria, dynamic behavior, and catalytic properties merely by their presence in solution. This effect is of concern because many of the standard experiments used to investigate protein structure and function involve changing solution conditions such as pH and/or temperature. In experiments in which pH is varied, it is common practice to switch buffering agents so that the pH is within the working range of the weak acid and conjugate base. If multiple buffers are used, it is not always possible to decouple buffer induced change from pH or temperature induced change. We have developed a series of mixed biological buffers for protein analysis that can be used across a broad pH range, are compatible with biologically relevant metal ions, and avoid complications that may arise from changing the small molecule composition of buffers when pH is used as an experimental variable.

  12. Social Buffering of Stress in Development: A Career Perspective

    Science.gov (United States)

    Gunnar, Megan R.

    2016-01-01

    This review provides a broad overview of my research group's work on social buffering in human development in the context of the field. Much of the focus is on social buffering of the hypothalamic-pituitary-adrenocortical (HPA) system, one of the two major arms of the mammalian stress system. This focus reflects the centrality of the HPA system in research on social buffering in the fields of developmental psychobiology and developmental science. However, buffering of the cardiovascular and autonomic nervous system is also discussed. The central developmental question in this area derives from attachment theory which argues that the infant's experience of stress and arousal regulation in the context of her early attachment relationships is not an immature form of social buffering experienced in adulthood, but rather the foundation out of which individual differences in the capacity to gain stress relief from social partners emerge. The emergence of social buffering in infancy, changes in social buffering throughout childhood and adolescence, the influence of early experience on later individual differences in social buffering, and critical gaps in our knowledge are described. PMID:28544861

  13. Dynamic Buffer Capacity in Acid-Base Systems.

    Science.gov (United States)

    Michałowska-Kaczmarczyk, Anna M; Michałowski, Tadeusz

    The generalized concept of 'dynamic' buffer capacity β V is related to electrolytic systems of different complexity where acid-base equilibria are involved. The resulting formulas are presented in a uniform and consistent form. The detailed calculations are related to two Britton-Robinson buffers, taken as examples.

  14. Molecular Buffers Permit Sensitivity Tuning and Inversion of Riboswitch Signals

    DEFF Research Database (Denmark)

    Rugbjerg, Peter; Genee, Hans Jasper; Jensen, Kristian

    2016-01-01

    transcription factor, while interacting DNA-binding domains mediate the transduction of signal and form an interacting molecular buffer. The molecular buffer system enables modular signal inversion through integration with repressor modules. Further, tuning of input sensitivity was achieved through perturbation...

  15. Reduction of buffering requirements: Another advantage of cooperative transmission

    KAUST Repository

    Bader, Ahmed

    2015-04-01

    Yet another advent of cooperative transmission is exposed in this letter. It is shown that cooperation lends itself to the reduction of buffer sizes of wireless sensor nodes. It is less likely to find the channel busy when cooperative transmission is employed in the network. Otherwise, in the lack of cooperation, the probability of build up of packet queues in transmission buffers increases.

  16. Dynamic Buffer Capacity in Acid?Base Systems

    OpenAIRE

    Micha?owska-Kaczmarczyk, Anna M.; Micha?owski, Tadeusz

    2015-01-01

    The generalized concept of ?dynamic? buffer capacity ? V is related to electrolytic systems of different complexity where acid?base equilibria are involved. The resulting formulas are presented in a uniform and consistent form. The detailed calculations are related to two Britton?Robinson buffers, taken as examples.

  17. Methods for improved growth of group III nitride buffer layers

    Science.gov (United States)

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  18. Sampling phase lock loop (PLL) with low power clock buffer

    NARCIS (Netherlands)

    Gao, X.; Bahai, A.; Bohsali, M.; Djabbari, A.; Klumperink, Eric A.M.; Nauta, Bram; Socci, G.

    2013-01-01

    A sampling phase locked loop (PLL) circuit includes a pull-up/down buffer configured to convert an oscillator reference clock into a square wave sampling control signal input to a sampling phase detector. The buffer circuit is configured to reduce power by controlling the switching of the pull-up

  19. Bus Implementation Using New Low Power PFSCL Tristate Buffers

    Directory of Open Access Journals (Sweden)

    Neeta Pandey

    2016-01-01

    Full Text Available This paper proposes new positive feedback source coupled logic (PFSCL tristate buffers suited to bus applications. The proposed buffers use switch to attain high impedance state and modify the load or the current source section. An interesting consequence of this is overall reduction in the power consumption. The proposed tristate buffers consume half the power compared to the available switch based counterpart. The issues with available PFSCL tristate buffers based bus implementation are identified and benefits of employing the proposed tristate buffer topologies are put forward. SPICE simulation results using TSMC 180 nm CMOS technology parameters are included to support the theoretical formulations. The performance of proposed tristate buffer topologies is examined on the basis of propagation delay, output enable time, and power consumption. It is found that one of the proposed tristate buffer topology outperforms the others in terms of all the performance parameters. An examination of behavior of available and the proposed PFSCL tristate buffer topologies under parameter variations and mismatch shows a maximum variation of 14%.

  20. Effects of riparian buffers on hydrology of northern seasonal ponds

    Science.gov (United States)

    Randall K. Kolka; Brian J. Palik; Daniel P. Tersteeg; James C. Bell

    2011-01-01

    Although seasonal ponds are common in northern, glaciated, forested landscapes, forest management guidelines are generally lacking for these systems. The objective of this study was to determine the effect of riparian buffer type on seasonal pond hydrology following harvest of the adjacent upland forest. A replicated block design consisting of four buffer treatments...

  1. Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Shang, X Z; Wu, S D; Liu, C; Wang, W X; Guo, L W; Huang, Q; Zhou, J M

    2006-01-01

    Low-temperature step-graded InAlAs metamorphic buffer layers on GaAs substrate grown by molecular beam epitaxy were investigated. The strain relaxation and the composition of the top InAlAs layer were determined by high-resolution triple-axis x-ray diffraction measurements, which show that the top InAlAs layer is nearly fully relaxed. Surface morphology was observed by reflection high-energy electron diffraction pattern and atomic force microscopy. Under a selected range of growth parameters, the root mean square surface roughness of the sample grown at 380 deg. C is 0.802 nm, which has the smallest value compared with those of other samples. Furthermore, The ω-2θ and ω scans of the triple-axis x-ray diffraction, and photoluminescence show the sample grown at 380 deg. C has better crystalline quality. With decreasing As overpressure at this growth temperature, crystalline quality became poor and could not maintain two dimensional growth with increasing overpressure. The carrier concentrations and Hall mobilities of the InAlAs/ InGaAs/GaAs MM-HEMT structure on low-temperature step-graded InAlAs metamorphic buffer layers grown in optimized conditions are high enough to make devices

  2. Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe. M.S. Thesis

    Science.gov (United States)

    Draper, Susan L.

    1987-01-01

    Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

  3. Photonic metasurface made of array of lens-like SiGe Mie resonators formed on (100) Si substrate via dewetting

    Science.gov (United States)

    Poborchii, Vladimir; Shklyaev, Alexander; Bolotov, Leonid; Uchida, Noriyuki; Tada, Tetsuya; Utegulov, Zhandos N.

    2017-12-01

    Metasurfaces consisting of arrays of high-index Mie resonators concentrating/redirecting light are important for integrated optics, photodetectors, and solar cells. Herein, we report the optical properties of low-Ge-content SiGe lens-like Mie resonator island arrays fabricated via dewetting during Ge deposition on a Si(100) surface at approximately 900 °C. We observe enhancement of the Si interaction with light owing to the efficient island-induced light concentration in the submicron-depth Si layer, which is mediated by both near-field Mie resonance leaking into the substrate and far-field light focusing. Such metasurfaces can improve the Si photodetector and solar-cell performance.

  4. Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35microm SiGe BiCMOS technology

    International Nuclear Information System (INIS)

    Niu, G.; Mathew, S.J.; Banerjee, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Subbanna, S.

    1999-01-01

    The effects of gamma irradiation on the Shallow-Trench Isolation (STI) leakage currents in a SiGe BiCMOS technology are investigated for the first time, and shown to be strongly dependent on the irradiation gate bias and operating substrate bias. A positive irradiation gate bias significantly enhances the STI leakage, suggesting a strong field assisted nature of the charge buildup process in the STI. Numerical simulations also suggest the existence of fixed positive charges deep in the bulk along the STI/Si interface. A negative substrate bias, however, effectively suppresses the STI leakage, and can be used to eliminate the leakage produced by the charges deep in the bulk under irradiation

  5. Smooth Nb surfaces fabricated by buffered electropolishing

    International Nuclear Information System (INIS)

    Wu, Andy T.; Mammosser, John; Phillips, Larry; Delayen, Jean; Reece, Charles; Wilkerson, Amy; Smith, David; Ike, Robert

    2007-01-01

    It was demonstrated that smooth Nb surfaces could be obtained through buffered electropolishing (BEP) employing an electrolyte consisting of lactic, sulfuric, and hydrofluoric acids. Parameters that control the polishing process were optimized to achieve a smooth surface finish. The polishing rate of BEP was determined to be 0.646 μm/min which was much higher than 0.381 μm/min achieved by the conventional electropolishing (EP) process widely used in the superconducting radio frequency (SRF) community. Root mean square measurements using a 3D profilometer revealed that Nb surfaces treated by BEP were an order of magnitude smoother than those treated by the optimized EP process. The chemical composition of the Nb surfaces after BEP was analyzed by static and dynamic secondary ion mass spectrometry (SIMS) systems. SIMS results implied that the surface oxide structure of Nb might be more complicated than what usually believed and could be inhomogeneous. Preliminary results of BEP on Nb SRF single cell cavities and half-cells were reported. It was shown that smooth and bright surfaces could be obtained in 1800 s when the electric field inside a SRF cavity was uniform during a BEP process. This study showed that BEP is a promising technique for surface treatment on Nb SRF cavities to be used in particle accelerators

  6. Buffers for biomass production in temperate European agriculture

    DEFF Research Database (Denmark)

    Christen, Benjamin; Dalgaard, Tommy

    2013-01-01

    , environmental pressures from intensive agriculture and policy developments. Use of conservation buffers by farmers outside of designated schemes is limited to date, but the increasing demand for bioenergy and the combination of agricultural production with conservation calls for a much wider implementation....... This paper reviews the biophysical knowledge on buffer functioning and associated ecosystem services. It describes how a three-zone buffer design, with arable fields buffered in combination by grassland, short rotation forestry (SRF) or coppice (SRC) and undisturbed vegetation along water courses, can...... be incorporated into farming landscapes as productive conservation elements and reflects on the potential for successful implementation. Land use plays a much greater role in determining catchment hydrology than soil type: shelterbelts or buffer strips have markedly higher infiltration capacity than arable...

  7. Evaluation on elution feature of bentonite buffer materials

    Energy Technology Data Exchange (ETDEWEB)

    Ishikawa, Hirohisa; Kanno, Takeshi; Matsumoto, Kazuhiro

    1997-09-01

    In order to evaluate long term physical stability of artificial barrier in land disposal of high level radioactive wastes, it is necessary to know quantitatively elution behavior of buffering materials from disposal road (or cavity) to circumferential rock crack. When elution of the buffer material occurs on large scale, amount of bentonite in the disposal road (or cavity) reduces and reduction of various functions expected to the buffer materials is presumed. According to specification examples of road transverse arrangement and disposal vertical arrangement systems, evaluation on elution amount of the buffer materials at disposal environment was conducted. Opening width of rock crack in the disposal environment was supposed to be 0.5 mm. As a result, obtained mass elution ratios of the buffer materials due to extrusion phenomenon were 0.04 to 0.2% after 10,000 year and 2 to 12% after 1,000,000 years. (G.K.)

  8. Thin film photovoltaic devices with a minimally conductive buffer layer

    Science.gov (United States)

    Barnes, Teresa M.; Burst, James

    2016-11-15

    A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

  9. Multi-Buffer Simulations for Trace Language Inclusion

    Directory of Open Access Journals (Sweden)

    Milka Hutagalung

    2016-09-01

    Full Text Available We consider simulation games played between Spoiler and Duplicator on two Büchi automata in which the choices made by Spoiler can be buffered by Duplicator in several buffers before she executes them on her structure. We show that the simulation games are useful to approximate the inclusion of trace closures of languages accepted by finite-state automata, which is known to be undecidable. We study the decidability and complexity and show that the game with bounded buffers can be decided in polynomial time, whereas the game with one unbounded and one bounded buffer is highly undecidable. We also show some sufficient conditions on the automata for Duplicator to win the game (with unbounded buffers.

  10. Replenishing data descriptors in a DMA injection FIFO buffer

    Science.gov (United States)

    Archer, Charles J [Rochester, MN; Blocksome, Michael A [Rochester, MN; Cernohous, Bob R [Rochester, MN; Heidelberger, Philip [Cortlandt Manor, NY; Kumar, Sameer [White Plains, NY; Parker, Jeffrey J [Rochester, MN

    2011-10-11

    Methods, apparatus, and products are disclosed for replenishing data descriptors in a Direct Memory Access (`DMA`) injection first-in-first-out (`FIFO`) buffer that include: determining, by a messaging module on an origin compute node, whether a number of data descriptors in a DMA injection FIFO buffer exceeds a predetermined threshold, each data descriptor specifying an application message for transmission to a target compute node; queuing, by the messaging module, a plurality of new data descriptors in a pending descriptor queue if the number of the data descriptors in the DMA injection FIFO buffer exceeds the predetermined threshold; establishing, by the messaging module, interrupt criteria that specify when to replenish the injection FIFO buffer with the plurality of new data descriptors in the pending descriptor queue; and injecting, by the messaging module, the plurality of new data descriptors into the injection FIFO buffer in dependence upon the interrupt criteria.

  11. Buffer erosion: An overview of concepts and potential safety consequences

    International Nuclear Information System (INIS)

    Apted, Michael J.; Arthur, Randy; Bennett, David; Savage, David; Saellfors, Goeran; Wennerstroem, Haakan

    2010-11-01

    In its safety analysis SR-Can, SKB reported preliminary results and conclusions on the mechanisms of bentonite colloid formation and stability, with a rough estimate of the consequences of loss of bentonite buffer by erosion. With the review of SR-Can the authorities (SKI and SSI) commented that erosion of the buffer had the greatest safety significance, that the understanding of the mechanisms of buffer erosion was inadequate, and that more work would be required to arrive at robust estimates of the extent and impacts of buffer erosion. After the SR-Can report, SKB started a two-year research project on buffer erosion. The results from this two-year project have been reported in several SKB technical reports. SSM started this project to build up its own competence in the related scientific areas by a preliminary evaluation of SKB's research results

  12. Buffer erosion: An overview of concepts and potential safety consequences

    Energy Technology Data Exchange (ETDEWEB)

    Apted, Michael J.; Arthur, Randy (INTERA Incorporated, Denver, CO (United States)); Bennett, David (TerraSalus Limited, Rutland (United Kingdom)); Savage, David (Savage Earth Associates Limited, Bournemouth (United Kingdom)); Saellfors, Goeran (GeoForce AB, Billdal (Sweden)); Wennerstroem, Haakan (Dept. of Chemistry, Lund Univ., Lund (Sweden))

    2010-11-15

    In its safety analysis SR-Can, SKB reported preliminary results and conclusions on the mechanisms of bentonite colloid formation and stability, with a rough estimate of the consequences of loss of bentonite buffer by erosion. With the review of SR-Can the authorities (SKI and SSI) commented that erosion of the buffer had the greatest safety significance, that the understanding of the mechanisms of buffer erosion was inadequate, and that more work would be required to arrive at robust estimates of the extent and impacts of buffer erosion. After the SR-Can report, SKB started a two-year research project on buffer erosion. The results from this two-year project have been reported in several SKB technical reports. SSM started this project to build up its own competence in the related scientific areas by a preliminary evaluation of SKB's research results

  13. Nonmaxwell relaxation in disordered media: Physical mechanisms and fractional relaxation equations

    International Nuclear Information System (INIS)

    Arkhincheev, V.E.

    2004-12-01

    The problem of charge relaxation in disordered systems has been solved. It is shown, that due to the inhomogeneity of the medium the charge relaxation has a non-Maxwell character. The two physical mechanisms of a such behavior have been founded. The first one is connected with the 'fractality' of conducting ways. The second mechanism of nonexponential non-Maxwell behavior is connected with the frequency dispersion of effective conductivity of heterogeneous medium, initially consisting of conducting phases without dispersion. The new generalized relaxation equations in the form of fractional temporal integro-differential equations are deduced. (author)

  14. Dynamical relaxation in 2HDM models

    Science.gov (United States)

    Lalak, Zygmunt; Markiewicz, Adam

    2018-03-01

    Dynamical relaxation provides an interesting solution to the hierarchy problem in face of the missing signatures of any new physics in recent experiments. Through a dynamical process taking place in the inflationary phase of the Universe it manages to achieve a small electroweak scale without introducing new states observable in current experiments. Appropriate approximation makes it possible to derive an explicit formula for the final vevs in the double-scanning scenario extended to a model with two Higgs doublets (2HDM). Analysis of the relaxation in the 2HDM confirms that in a general case it is impossible to keep vevs of both scalars small, unless fine-tuning is present or additional symmetries are cast upon the Lagrangian. Within the slightly constrained variant of the 2HDM, where odd powers of the fields’ expectation values are not present (which can be easily enforced by requiring that the doublets have different gauge transformations or by imposing a global symmetry) it is shown that the difference between the vevs of two scalars tends to be proportional to the cutoff. The analysis of the relaxation in 2HDM indicates that in a general case the relaxation would be stopped by the first doublet that gains a vev, with the other one remaining vevless with a mass of the order of the cutoff. This happens to conform with the inert doublet model.

  15. Relaxation of coupled nuclear spin systems

    International Nuclear Information System (INIS)

    Koenigsberger, E.

    1985-05-01

    The subject of the present work is the relaxation behaviour of scalarly coupled spin-1/2 systems. In the theoretical part the semiclassical Redfield equations are used. Dipolar (D), Chemical Shift Anisotropy (CSA) and Random Field (RF) interactions are considered as relaxation mechanisms. Cross correlations of dipolar interactions of different nuclei pairs and those between the D and the CSA mechanisms are important. The model of anisotropic molecular rotational relaxation and the extreme narrowing approximation are used to obtain the spectral density functions. The longitudinal relaxation data are analyzed into normal modes following Werbelow and Grant. The time evolution of normal modes is derived for the AX system with D-CSA cross terms. In the experimental part the hypothesis of dimerization in the cinnamic acid and the methyl cinnamate - AMX systems with DD cross terms - is corroborated by T 1 -time measurements and a calculation of the diffusion constants. In pentachlorobenzene - an AX system - taking into account of D-CSA cross terms enables the complete determination of movements anosotropy and the determination of the sign of the indirect coupling constant 1 Jsub(CH). (G.Q.)

  16. Quantization by stochastic relaxation processes and supersymmetry

    International Nuclear Information System (INIS)

    Kirschner, R.

    1984-01-01

    We show the supersymmetry mechanism resposible for the quantization by stochastic relaxation processes and for the effective cancellation of the additional time dimension against the two Grassmann dimensions. We give a non-perturbative proof of the validity of this quantization procedure. (author)

  17. Charge Relaxation Dynamics of an Electrolytic Nanocapacitor

    Science.gov (United States)

    2015-01-01

    Understanding ion relaxation dynamics in overlapping electric double layers (EDLs) is critical for the development of efficient nanotechnology-based electrochemical energy storage, electrochemomechanical energy conversion, and bioelectrochemical sensing devices as well as the controlled synthesis of nanostructured materials. Here, a lattice Boltzmann (LB) method is employed to simulate an electrolytic nanocapacitor subjected to a step potential at t = 0 for various degrees of EDL overlap, solvent viscosities, ratios of cation-to-anion diffusivity, and electrode separations. The use of a novel continuously varying and Galilean-invariant molecular-speed-dependent relaxation time (MSDRT) with the LB equation recovers a correct microscopic description of the molecular-collision phenomena and enhances the stability of the LB algorithm. Results for large EDL overlaps indicated oscillatory behavior for the ionic current density, in contrast to monotonic relaxation to equilibrium for low EDL overlaps. Further, at low solvent viscosities and large EDL overlaps, anomalous plasmalike spatial oscillations of the electric field were observed that appeared to be purely an effect of nanoscale confinement. Employing MSDRT in our simulations enabled modeling of the fundamental physics of the transient charge relaxation dynamics in electrochemical systems operating away from equilibrium wherein Nernst–Einstein relation is known to be violated. PMID:25678941

  18. Relaxation dynamics of multilayer triangular Husimi cacti

    Science.gov (United States)

    Galiceanu, Mircea; Jurjiu, Aurel

    2016-09-01

    We focus on the relaxation dynamics of multilayer polymer structures having, as underlying topology, the Husimi cactus. The relaxation dynamics of the multilayer structures is investigated in the framework of generalized Gaussian structures model using both Rouse and Zimm approaches. In the Rouse type-approach, we determine analytically the complete eigenvalues spectrum and based on it we calculate the mechanical relaxation moduli (storage and loss modulus) and the average monomer displacement. First, we monitor these physical quantities for structures with a fixed generation number and we increase the number of layers, such that the linear topology will smoothly come into play. Second, we keep constant the size of the structures, varying simultaneously two parameters: the generation number of the main layer, G, and the number of layers, c. This fact allows us to study in detail the crossover from a pure Husimi cactus behavior to a predominately linear chain behavior. The most interesting situation is found when the two limiting topologies cancel each other. For this case, we encounter in the intermediate frequency/time domain regions of constant slope for different values of the parameter set (G, c) and we show that the number of layers follows an exponential-law of G. In the Zimm-type approach, which includes the hydrodynamic interactions, the quantities that describe the mechanical relaxation dynamics do not show scaling behavior as in the Rouse model, except the limiting case, namely, a very high number of layers and low generation number.

  19. Waveform relaxation methods for implicit differential equations

    NARCIS (Netherlands)

    P.J. van der Houwen; W.A. van der Veen

    1996-01-01

    textabstractWe apply a Runge-Kutta-based waveform relaxation method to initial-value problems for implicit differential equations. In the implementation of such methods, a sequence of nonlinear systems has to be solved iteratively in each step of the integration process. The size of these systems

  20. Collection Development: Relaxation & Meditation, September 1, 2010

    Science.gov (United States)

    Lettus, Dodi

    2010-01-01

    One of the first books to document the relationship between stress and physical and emotional health was "The Relaxation Response" by Herbert Benson, M.D., with Miriam Z. Klipper. Originally published in 1975, the book grew out of Benson's observations as a cardiologist and his research as a fellow at Harvard Medical School. Benson's study of…

  1. Relaxation time in confined disordered systems

    International Nuclear Information System (INIS)

    Chamati, H.; Korutcheva, E.

    2006-05-01

    The dynamic critical behavior of a quenched hypercubic sample of linear size L is considered within the 'random T c ' field theoretical model with purely relaxation dynamic (Model A). The dynamic finite size scaling behavior is established and analyzed when the system is quenched from a homogeneous phase towards its critical temperature. The obtained results are compared to those reported in the literature. (author)

  2. Stretched Exponential relaxation in pure Se glass

    Science.gov (United States)

    Dash, S.; Ravindren, S.; Boolchand, P.

    A universal feature of glasses is the stretched exponential relaxation, f (t) = exp[ - t / τ ] β . The model of diffusion of excitations to randomly distributed traps in a glass by Phillips1 yields the stretched exponent β = d[d +2] where d, the effective dimensionality. We have measured the enthalpy of relaxation ΔHnr (tw) at Tg of Se glass in modulated DSC experiments as glasses age at 300K and find β = 0.43(2) for tw in the 0 relaxation is a narrowing of the glass transition width from 7.1°C to 1.4°C, and the ΔHnr term increasing from 0.21 cal/gm to 0.92 cal/gm. In bulk GexSe100-x glasses as x increases to 20%, the length of the polymeric Sen chains between the Ge-crosslinks decreases to n = 2. and the striking relaxation effects nearly vanish. J.C. Phillips, Rep.Prog.Phys. 59 , 1133 (1996). Supported by NSF Grant DMR 08-53957.

  3. Structural relaxation monitored by instantaneous shear modulus

    DEFF Research Database (Denmark)

    Olsen, Niels Boye; Dyre, Jeppe; Christensen, Tage Emil

    1998-01-01

    time definition based on a recently proposed expression for the relaxation time, where G [infinity] reflects the fictive temperature. All parameters entering the reduced time were determined from independent measurements of the frequency-dependent shear modulus of the equilibrium liquid....

  4. PECVD Tekniği ile Büyütülmüş İnce Filmlerde Oluşan Ge ve SiGe Nanokristallerin Geçirgen Elektron Mikroskobu (TEM) ,Raman ve Fotoışıma Spektroskopisi Teknikleri ile İncelenmesi

    OpenAIRE

    Şahin, Bünyamin; Ağan, Sedat

    2009-01-01

    We report an experimental study, optical properties of Ge and SiGe nanocrystals in SiOx structures are investigated by using Transmission Electron Microscopy (TEM), Raman and Photlüminescence Spectroscopy techniques. Ge nanocrystals in silicon oxide thin films have been grown with different annealing time by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The aim of our work is to determine size and size distiributions Ge, SiGe nanocrystals in SiOx martix due to annealing process...

  5. Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

    International Nuclear Information System (INIS)

    Fong, W.K.; Ng, S.W.; Leung, B.H.; Surya, Charles

    2003-01-01

    We report the growth of high-mobility Si-doped GaN epilayers utilizing unique double buffer layer (DBL) structures, which consist of a thin buffer layer and a thick GaN intermediate-temperature buffer layer (ITBL). In this study, three types of DBL were investigated: (i) thin GaN low-temperature buffer layer/GaN ITBL (type I); (ii) nitridated Ga metal film/GaN ITBL (type II); and (iii) thin AlN high-temperature buffer layer/GaN ITBL (type III). Systematic measurements were conducted on the electron mobilities and the low-frequency noise over a wide range of temperatures. It is found that the electron mobilities of the GaN films are substantially improved with the use of DBLs, with the sample using type III DBL which exhibits the highest low-temperature mobility. Furthermore, the same sample also demonstrates the elimination of deep levels at 91 and 255 meV below the conduction band. This is believed to result from the relaxation of tensile stress during growth with the use of type III DBLs

  6. Phosphorus retention in riparian buffers: review of their efficiency.

    Science.gov (United States)

    Hoffmann, Carl Christian; Kjaergaard, Charlotte; Uusi-Kämppä, Jaana; Hansen, Hans Christian Bruun; Kronvang, Brian

    2009-01-01

    Ground water and surface water interactions are of fundamental importance for the biogeochemical processes governing phosphorus (P) dynamics in riparian buffers. The four most important conceptual hydrological pathways for P losses from and P retention in riparian buffers are reviewed in this paper: (i) The diffuse flow path with ground water flow through the riparian aquifer, (ii) the overland flow path across the riparian buffer with water coming from adjacent agricultural fields, (iii) irrigation of the riparian buffer with tile drainage water from agricultural fields where disconnected tile drains irrigate the riparian buffer, and (iv) inundation of the riparian buffer (floodplain) with river water during short or longer periods. We have examined how the different flow paths in the riparian buffer influence P retention mechanisms theoretically and from empirical evidence. The different hydrological flow paths determine where and how water-borne P compounds meet and interact with iron and aluminum oxides or other minerals in the geochemical cycling of P in the complex and dynamic environment that constitutes a riparian buffer. The main physical process in the riparian buffer-sedimentation-is active along several flow paths and may account for P retention rates of up to 128 kg P ha(-1) yr(-1), while plant uptake may temporarily immobilize up to 15 kg P ha(-1) yr(-1). Retention of dissolved P in riparian buffers is not as pronounced as retention of particulate P and is often below 0.5 kg P ha(-1) yr(-1). Several studies show significant release of dissolved P (i.e., up to 8 kg P ha(-1) yr(-1)).

  7. Electron spin-lattice relaxation in fractals

    International Nuclear Information System (INIS)

    Shrivastava, K.N.

    1986-08-01

    We have developed the theory of the spin-fracton interaction for paramagnetic ions in fractal structures. The interaction is exponentially damped by the self-similarity length of the fractal and by the range dimensionality d Φ . The relaxation time of the spin due to the absorption and emission of the fracton has been calculated for a general dimensionality called the Raman dimensionality d R , which for the fractons differs from the Hausdorff (fractal) dimensionality, D, as well as from the Euclidean dimensionality, d. The exponent of the energy level separation in the relaxation rate varies with d R d Φ /D. We have calculated the spin relaxation rate due to a new type of Raman process in which one fracton is absorbed to affect a spin transition from one electronic level to another and later another fracton is emitted along with a spin transition such that the difference in the energies of the two fractons is equal to the electronic energy level separation. The temperature and the dimensionality dependence of such a process has been found in several approximations. In one of the approximations where the van Vleck relaxation rate for a spin in a crystal is known to vary with temperature as T 9 , our calculated variation for fractals turns out to be T 6.6 , whereas the experimental value for Fe 3+ in frozen solutions of myoglobin azide is T 6.3 . Since we used d R =4/3 and the fracton range dimensionality d Φ =D/1.8, we expect to measure the dimensionalities of the problem by measuring the temperature dependence of the relaxation times. We have also calculated the shift of the paramagnetic resonance transition for a spin in a fractal for general dimensionalities. (author)

  8. Visualization of Buffer Capacity with 3-D "Topo" Surfaces: Buffer Ridges, Equivalence Point Canyons and Dilution Ramps

    Science.gov (United States)

    Smith, Garon C.; Hossain, Md Mainul

    2016-01-01

    BufCap TOPOS is free software that generates 3-D topographical surfaces ("topos") for acid-base equilibrium studies. It portrays pH and buffer capacity behavior during titration and dilution procedures. Topo surfaces are created by plotting computed pH and buffer capacity values above a composition grid with volume of NaOH as the x axis…

  9. BENTO buffer development program in Finland - Key issues

    International Nuclear Information System (INIS)

    Autio, J.; Korkiala-Tanttu, L.; Vaehaenen, M.; Koskinen, K.; Korkeakoski, P.; Haapala, K.

    2010-01-01

    Document available in extended abstract form only. Posiva launched a programme, BENTO, to develop technology of using bentonite in spent nuclear fuel repositories. The main purpose of the BENTO programme is to produce buffer designs and verify that they fulfil the requirements, especially safety requirements. To achieve this objective, resources and the level of expertise and know-how has to be increased. There are several uncertainties related to the functioning of the buffer components at present. An issue is defined as being significant if there is sufficient uncertainty that the buffer system might not fulfil the requirements because of the issue. These significant issues need to be resolved in order to develop a proper design and to verify the fulfilment of the requirements. The list of significant issues may change with time. Therefore it is crucial to develop adequate expertise, know-how and laboratory facilities to manage the changes. Moreover, there is confidence that by solving the open issues a defendable construction license application can be submitted in 2012. The basic nature of the programme is a combination of material and process research with the design and manufacturing of buffer components to produce feasible buffer design with proven long-term functional properties. The development work carried out under BENTO-programme has been initially divided into four different projects. During the course of work the number of projects and their content can be adjusted. The four BENTO projects are: 1. Manufacturing (MANU); 2. Design (DESI); 3. Modelling (MODE); 4. Material and Process Research (MARE). BENTO programme aims at producing feasible buffer designs which fulfil the requirements specified in Posiva's requirement management system. The designs are produced in DESI-project by following the design development scheme which starts from specification of design basis and ends in documented detailed designs and therefore DESIgn is specified as one

  10. Effect of film thickness, type of buffer layer, and substrate temperature on the morphology of dicyanovinyl-substituted sexithiophene films

    Energy Technology Data Exchange (ETDEWEB)

    Levin, Alexandr A., E-mail: alexander.levin@iapp.de [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Levichkova, Marieta [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Heliatek GmbH, 01187 Dresden (Germany); Hildebrandt, Dirk; Klisch, Marina; Weiss, Andre [Heliatek GmbH, 01187 Dresden (Germany); Wynands, David; Elschner, Chris [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Pfeiffer, Martin [Heliatek GmbH, 01187 Dresden (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

    2012-01-31

    The influence of film thickness, type of buffer underlayer, and deposition substrate temperature on the crystal structure, microstructure, and morphology of the films of dicyanovinyl-substituted sexithiophene with four butyl-chains (DCV6T-Bu{sub 4}) is investigated by means of X-ray diffraction (XRD) and X-ray reflectivity methods. A neat Si wafer or a Si wafer covered by a 15 nm buffer underlayer of fullerene C{sub 60} or 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF) is used as a substrate. The crystalline nature and ordered molecular arrangement of the films are recorded down to 6 nm film thickness. By using substrates heated up to 90 Degree-Sign C during the film deposition, the size of the DCV6T-Bu{sub 4} crystallites in direction perpendicular to the film surface increases up to value of the film thickness. With increasing deposition substrate temperature or film thickness, the DCV6T-Bu{sub 4} film relaxes, resulting in reducing the interplane distances closer to the bulk values. For the films of the same thickness deposited at the same substrate temperature, the DCV6T-Bu{sub 4} film relaxes for growth on Si to BPAPF to C{sub 60}. Thicker films grown at heated substrates are characterized by smaller density, higher roughness and crystallinity and better molecular ordering. A thin (up to about 6 nm-thick) intermediate layer with linear density-gradient is formed at the C{sub 60}/DCV6T-Bu{sub 4} interface for the films with buffer C{sub 60} layer. The XRD pattern of the DCV6T-Bu{sub 4} powder is indexed using triclinic unit cell parameters.

  11. Erosion of buffer caused by groundwater leakages

    International Nuclear Information System (INIS)

    Autio, J.; Hanana, K.; Punkkinen, O.; Koskinen, K.; Olin, M.

    2010-01-01

    Document available in extended abstract form only. In the Finnish HLW disposal concept the most important properties of the bentonite clay being considered for these isolation purposes are its thermal behaviour, low hydraulic conductivity, diffusion limited transport, rheology, plasticity, sufficient swelling potential, and exchange capacity. All of these properties depend critically on bentonite density; therefore, any potential mass loss or redistribution events must be well characterized. One such event or process is the erosion of bentonite by flowing groundwater and the groundwater flowing in newly formed channels, in special. Mechanical erosion during the operational phase, due to high groundwater pressure gradients in open excavations, has been identified as a critical issue in TKS-2006 and SR-Can. This work addresses the mechanical erosion of bentonite by fluid shear. In order for buffer erosion to occur three processes must take place: detachment, entrainment, and transport. These processes are followed by the settling of the material and redistribution of buffer mass. Erosion begins with the detachment of a particle from surrounding material, which requires the application of shear forces greater than the attractive force between the particle and parent structure. Entrainment is the process by which the eroding medium lifts the detached particle into the flow. The most important aspect in entrainment is transfer of fluid's inertial forces via surface friction to particles' inertial forces, which, in turn, must overcome the frictional resistance between the particle and its surroundings. Factors influencing frictional resistance include gravity, particle mass, saturation degree of parent structure, composition of water present in parent structure, particle size, and surface roughness. Recent erosion tests, whereby water flow was directed over compacted bentonite blocks or through a system of bentonite pellets, have indicated that bentonite erodes

  12. MANU. Instrumentation of Buffer Demo. Preliminary Study

    International Nuclear Information System (INIS)

    Laaksonen, R.

    2010-01-01

    The purpose of this work is to describe feasible measuring and monitoring alternatives which can be used, if needed, in medium to full scale nuclear waste repository deposition hole mock-up tests. The focus of the work was to determine what variables can actually be measured, how to achieve the measurements and what kind of demands comes from the modelling, scientific, and technical points of view. This project includes a review of the previous waste repository mock-up tests carried out in several European countries such as Belgium, Czech Republic, Spain and Sweden. Also information was gathered by interviewing domestic and foreign scientists specialized in the fields of measurement instrumentation and related in-situ and laboratory work. On the basis of this review, recommendations were developed for the necessary actions needed to be done from the instrumentation point of view for future tests. It is possible to measure and monitor the processes going on in a deposition hole in-situ conditions. The data received during a test in real repository conditions enables to follow the processes and to verify the hypothesis made on the behaviour of various components of the repository: buffer, canister, rock and backfill. Because full scale testing is expensive, the objectives and hypothesis must be carefully set and the test itself with its instrumentation must serve very specific objectives. The main purpose of mock-up tests is to verify that the conditions surrounding the canister are according to the design requirements. A whole mock-up test and demonstration process requires a lot of time and effort. The instrumentation part of the work must also start at early stages to ensure that the instrumentation itself will not become bottlenecked nor suffer from low quality solutions. The planning of the instrumentation work could be done in collaboration with foreign scientists which have participated to previous instrumentation projects. (orig.)

  13. Transport and relaxation properties of superfluid 3He. I. Kinetic equation and Bogoliubov quasiparticle relaxation rate

    International Nuclear Information System (INIS)

    Einzel, D.; Woelfle, P.

    1978-01-01

    The kinetic equation for Bogoliubov quasiparticles for both the A and B phases of superfluid 3 He is derived from the general matrix kinetic equation. A condensed expression for the exact spin-symmetric collision integral is given. The quasiparticle relaxation rate is calculated for the BW state using the s--p approximation for the quasiparticle scattering amplitude. By using the results for the quasiparticle relaxation rate, the mean free path of Bogoliubov quasiparticles is calculated for all temperatures

  14. Temperature Buffer Test. Final THM modelling

    International Nuclear Information System (INIS)

    Aakesson, Mattias; Malmberg, Daniel; Boergesson, Lennart; Hernelind, Jan; Ledesma, Alberto; Jacinto, Abel

    2012-01-01

    The Temperature Buffer Test (TBT) is a joint project between SKB/ANDRA and supported by ENRESA (modelling) and DBE (instrumentation), which aims at improving the understanding and to model the thermo-hydro-mechanical behavior of buffers made of swelling clay submitted to high temperatures (over 100 deg C) during the water saturation process. The test has been carried out in a KBS-3 deposition hole at Aespoe HRL. It was installed during the spring of 2003. Two heaters (3 m long, 0.6 m diameter) and two buffer arrangements have been investigated: the lower heater was surrounded by bentonite only, whereas the upper heater was surrounded by a composite barrier, with a sand shield between the heater and the bentonite. The test was dismantled and sampled during the winter of 2009/2010. This report presents the final THM modelling which was resumed subsequent to the dismantling operation. The main part of this work has been numerical modelling of the field test. Three different modelling teams have presented several model cases for different geometries and different degree of process complexity. Two different numerical codes, Code B right and Abaqus, have been used. The modelling performed by UPC-Cimne using Code B right, has been divided in three subtasks: i) analysis of the response observed in the lower part of the test, by inclusion of a number of considerations: (a) the use of the Barcelona Expansive Model for MX-80 bentonite; (b) updated parameters in the vapour diffusive flow term; (c) the use of a non-conventional water retention curve for MX-80 at high temperature; ii) assessment of a possible relation between the cracks observed in the bentonite blocks in the upper part of TBT, and the cycles of suction and stresses registered in that zone at the start of the experiment; and iii) analysis of the performance, observations and interpretation of the entire test. It was however not possible to carry out a full THM analysis until the end of the test due to

  15. Temperature Buffer Test. Final THM modelling

    Energy Technology Data Exchange (ETDEWEB)

    Aakesson, Mattias; Malmberg, Daniel; Boergesson, Lennart; Hernelind, Jan [Clay Technology AB, Lund (Sweden); Ledesma, Alberto; Jacinto, Abel [UPC, Universitat Politecnica de Catalunya, Barcelona (Spain)

    2012-01-15

    The Temperature Buffer Test (TBT) is a joint project between SKB/ANDRA and supported by ENRESA (modelling) and DBE (instrumentation), which aims at improving the understanding and to model the thermo-hydro-mechanical behavior of buffers made of swelling clay submitted to high temperatures (over 100 deg C) during the water saturation process. The test has been carried out in a KBS-3 deposition hole at Aespoe HRL. It was installed during the spring of 2003. Two heaters (3 m long, 0.6 m diameter) and two buffer arrangements have been investigated: the lower heater was surrounded by bentonite only, whereas the upper heater was surrounded by a composite barrier, with a sand shield between the heater and the bentonite. The test was dismantled and sampled during the winter of 2009/2010. This report presents the final THM modelling which was resumed subsequent to the dismantling operation. The main part of this work has been numerical modelling of the field test. Three different modelling teams have presented several model cases for different geometries and different degree of process complexity. Two different numerical codes, Code{sub B}right and Abaqus, have been used. The modelling performed by UPC-Cimne using Code{sub B}right, has been divided in three subtasks: i) analysis of the response observed in the lower part of the test, by inclusion of a number of considerations: (a) the use of the Barcelona Expansive Model for MX-80 bentonite; (b) updated parameters in the vapour diffusive flow term; (c) the use of a non-conventional water retention curve for MX-80 at high temperature; ii) assessment of a possible relation between the cracks observed in the bentonite blocks in the upper part of TBT, and the cycles of suction and stresses registered in that zone at the start of the experiment; and iii) analysis of the performance, observations and interpretation of the entire test. It was however not possible to carry out a full THM analysis until the end of the test due to

  16. The Interplay between Feedback and Buffering in Cellular Homeostasis.

    Science.gov (United States)

    Hancock, Edward J; Ang, Jordan; Papachristodoulou, Antonis; Stan, Guy-Bart

    2017-11-22

    Buffering, the use of reservoirs of molecules to maintain concentrations of key molecular species, and negative feedback are the primary known mechanisms for robust homeostatic regulation. To our knowledge, however, the fundamental principles behind their combined effect have not been elucidated. Here, we study the interplay between buffering and negative feedback in the context of cellular homeostasis. We show that negative feedback counteracts slow-changing disturbances, whereas buffering counteracts fast-changing disturbances. Furthermore, feedback and buffering have limitations that create trade-offs for regulation: instability in the case of feedback and molecular noise in the case of buffering. However, because buffering stabilizes feedback and feedback attenuates noise from slower-acting buffering, their combined effect on homeostasis can be synergistic. These effects can be explained within a traditional control theory framework and are consistent with experimental observations of both ATP homeostasis and pH regulation in vivo. These principles are critical for studying robustness and homeostasis in biology and biotechnology. Copyright © 2017 The Authors. Published by Elsevier Inc. All rights reserved.

  17. Buffer lining manufacturing method for radioactive waste container

    International Nuclear Information System (INIS)

    Kawakami, Susumu; Sugino, Hiroyuki

    1998-01-01

    A recessed portion is formed on an upper surface of a filler layer made of a buffer powder filled into a container main body, the upper portion of the vessel main body is closed by a shrinkable liquid tight film. It is placed in a pressurizing container and pressed to mold a buffer lining base material integrated with the vessel main body. A flat upper surface and a containing space are formed by shaving to form a buffer lining. A disposing vessel containing radioactive wastes is inserted into the containing space, and the containing space is closed by a buffer block. The upper surface is sealed by a lid. With such a constitution, since a buffer lining integrated with the vessel main body can be formed easily inside the vessel main body, the disposing vessel can be contained in the containing vessel in a state surrounded by the buffer easily and stably without laying or piling over a large quantity of buffer blocks. (T.M.)

  18. Accelerating Science with the NERSC Burst Buffer Early User Program

    Energy Technology Data Exchange (ETDEWEB)

    Bhimji, Wahid [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Bard, Debbie [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Romanus, Melissa [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Rutgers Univ., New Brunswick, NJ (United States); Paul, David [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Ovsyannikov, Andrey [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Friesen, Brian [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Bryson, Matt [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Correa, Joaquin [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Lockwood, Glenn K. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Tsulaia, Vakho [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Byna, Suren [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Farrell, Steve [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Gursoy, Doga [Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); Daley, Chris [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Beckner, Vince [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Van Straalen, Brian [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Trebotich, David [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Tull, Craig [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Weber, Gunther H. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Wright, Nicholas J. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Antypas, Katie [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Prabhat, none [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2016-01-01

    NVRAM-based Burst Buffers are an important part of the emerging HPC storage landscape. The National Energy Research Scientific Computing Center (NERSC) at Lawrence Berkeley National Laboratory recently installed one of the first Burst Buffer systems as part of its new Cori supercomputer, collaborating with Cray on the development of the DataWarp software. NERSC has a diverse user base comprised of over 6500 users in 700 different projects spanning a wide variety of scientific computing applications. The use-cases of the Burst Buffer at NERSC are therefore also considerable and diverse. We describe here performance measurements and lessons learned from the Burst Buffer Early User Program at NERSC, which selected a number of research projects to gain early access to the Burst Buffer and exercise its capability to enable new scientific advancements. To the best of our knowledge this is the first time a Burst Buffer has been stressed at scale by diverse, real user workloads and therefore these lessons will be of considerable benefit to shaping the developing use of Burst Buffers at HPC centers.

  19. pH variations during diafiltration due to buffer nonidealities.

    Science.gov (United States)

    Baek, Youngbin; Yang, Deyu; Singh, Nripen; Arunkumar, Abhiram; Ghose, Sanchayita; Li, Zheng Jian; Zydney, Andrew L

    2017-11-01

    Diafiltration is used for final formulation of essentially all biotherapeutics. Several studies have demonstrated that buffer/excipient concentrations in the final diafiltered product can be different than that in the diafiltration buffer due to interactions between buffer species and the protein product. However, recent work in our lab has shown variations in solution pH that are largely independent of the protein concentration during the first few diavolumes. Our hypothesis is that these pH variations are due to nonidealities in the acid-base equilibrium coefficient. A model was developed for the diafiltration process accounting for the ionic strength dependence of the pK a . Experimental results obtained using phosphate and histidine buffers were in excellent agreement with model predictions. A decrease in ionic strength leads to an increase in the pK a for the phosphate buffer, causing a shift in the solution pH, even under conditions where the initial feed and the diafiltration buffer are at the same pH. This effect could be eliminated by matching the ionic strength of the feed and diafiltration buffer. The experimental data and model provide new insights into the factors controlling the pH profile during diafiltration processes. © 2017 American Institute of Chemical Engineers Biotechnol. Prog., 33:1555-1560, 2017. © 2017 American Institute of Chemical Engineers.

  20. Protein buffering in model systems and in whole human saliva.

    Directory of Open Access Journals (Sweden)

    Andreas Lamanda

    Full Text Available The aim of this study was to quantify the buffer attributes (value, power, range and optimum of two model systems for whole human resting saliva, the purified proteins from whole human resting saliva and single proteins. Two model systems, the first containing amyloglucosidase and lysozyme, and the second containing amyloglucosidase and alpha-amylase, were shown to provide, in combination with hydrogencarbonate and di-hydrogenphosphate, almost identical buffer attributes as whole human resting saliva. It was further demonstrated that changes in the protein concentration as small as 0.1% may change the buffer value of a buffer solution up to 15 times. Additionally, it was shown that there was a protein concentration change in the same range (0.16% between saliva samples collected at the time periods of 13:00 and others collected at 9:00 am and 17:00. The mode of the protein expression changed between these samples corresponded to the change in basic buffer power and the change of the buffer value at pH 6.7. Finally, SDS Page and Ruthenium II tris (bathophenantroline disulfonate staining unveiled a constant protein expression in all samples except for one 50 kDa protein band. As the change in the expression pattern of that 50 kDa protein band corresponded to the change in basic buffer power and the buffer value at pH 6.7, it was reasonable to conclude that this 50 kDa protein band may contain the protein(s belonging to the protein buffer system of human saliva.