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Sample records for related sige multilayer

SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

Science.gov (United States)

Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

2017-08-01

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.
The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition

Directory of Open Access Journals (Sweden)

Ahmad Ehsan Mohd Tamidi

2016-01-01

Full Text Available We have used a molecular dynamics technique to simulate the relationship between nanocluster precipitation and thermal conductivity in Si/Ge amorphous multilayer films, with and without Cu addition. In the study, the Green-Kubo equation was used to calculate thermal conductivity in these materials. Five specimens were prepared: Si/Ge layers, Si/(Ge + Cu layers, (Si + Cu/(Ge + Cu layers, Si/Cu/Ge/Cu layers, and Si/Cu/Ge layers. The number of precipitated nanoclusters in these specimens, which is defined as the number of four-coordinate atoms, was counted along the lateral direction of the specimens. The observed results of precipitate formation were considered in relation to the thermal conductivity results. Enhancement of precipitation of nanoclusters by Cu addition, that is, densification of four-coordinate atoms, can prevent the increment of thermal conductivity. Cu dopant increases the thermal conductivity of these materials. Combining these two points, we concluded that Si/Cu/Ge is the best structure to improve the conversion efficiency of the Si/Ge amorphous multilayer films.
Interfacial Phonon Transport Through Si/Ge Multilayer Film Using Monte Carlo Scheme With Spectral Transmissivity

Directory of Open Access Journals (Sweden)

Xin Ran

2018-05-01

Full Text Available The knowledge of interfacial phonon transport accounting for detailed phonon spectral properties is desired because of its importance for design of nanoscale energy systems. In this work, we investigate the interfacial phonon transport through Si/Ge multilayer films using an efficient Monte Carlo scheme with spectral transmissivity, which is validated for cross-plane phonon transport through both Si/Ge single-layer and Si/Ge bi-layer thin films by comparing with the discrete-ordinates solution. Different thermal boundary conductances between even the same material pair are declared at different interfaces within the multilayer system. Furthermore, the thermal boundary conductances at different interfaces show different trends with varying total system size, with the variation slope, very different as well. The results are much different from those in the bi-layer thin film or periodic superlattice. These unusual behaviors can be attributed to the combined interfacial local non-equilibrium effect and constraint effect from other interfaces.
Surface and interfacial structural characterization of MBE grown Si/Ge multilayers

International Nuclear Information System (INIS)

Saha, Biswajit; Sharma, Manjula; Sarma, Abhisakh; Rath, Ashutosh; Satyam, P.V.; Chakraborty, Purushottam; Sanyal, Milan K.

2009-01-01

Si/Ge multilayer structures have been grown by solid source molecular beam epitaxy (MBE) on Si (1 1 1) and (1 0 0) substrates and were characterized by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), high-depth-resolution secondary ion mass spectroscopy (SIMS) and cross-section high-resolution transmission electron microscopy (HRTEM). A reasonably good agreement has been obtained for layer thickness, interfacial structure and diffusion between SIMS and HRTEM measurements. Epitaxial growth and crystalline nature of the individual layer have been probed using cross-sectional HRTEM and XRD measurements. Surface and interface morphological studies by AFM and HRTEM show island-like growth of both Si and Ge nanostructures.
The enhancement of the interdiffusion in Si/Ge amorphous artificial multilayers by additions of B and Au

International Nuclear Information System (INIS)

Park, B.; Spaepen, F.; Poate, J.M.; Jacobson, D.C.

1990-01-01

Amorphous Si/amorphous Ge artificial multilayers were prepared by ion beam sputtering. Boron or gold impurities were introduced into the Si/Ge multilayers by ion implantation or during the sputtering deposition. Diffusion coefficients were determined by measuring the decrease in the intensity of the first order X-ray diffraction peak resulting from the composition modulation. It was found that the interdiffusion of Si and Ge in their amorphous phase can be enhanced by doping. The enhancement factor is independent of the degree of structural relaxation, as observed by the decrease of diffusivity with annealing time, of the amorphous phase. A model is proposed that describes this behavior in terms of electronic effects, introduced by the dopants, on the pre-existing structural defects governing diffusion
Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

2016-01-01

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.
Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang

2016-10-28

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.
Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy

International Nuclear Information System (INIS)

Tan, P.H.; Bougeard, D.; Abstreiter, G.; Brunner, K.

2005-01-01

We characterized strain and Ge content depending on depth in a self-assembled Si/Ge dot multilayer by scanning a microscopic Raman probe at a (110) cleavage plane. The multilayer structure was deposited by molecular-beam epitaxy on a (001) Si substrate and consisted of 80 periods, each of them composed by 25 nm Si spacers and 8 monolayer Ge forming laterally and vertically uncorrelated islands with a height of 2 nm and a lateral diameter of about 20 nm. An average biaxial strain of -3.5% within the core regions of islands is determined from the splitting of longitudinal and transversal optical Ge-Ge phonon modes observed in polarized Raman measurements. The absolute mode frequencies further enable analysis of a Ge content of 0.82. The analyzed strain and composition of islands are nearly independent from depths below the sample surface. This indicates well-controlled deposition parameters and negligible intermixing during deposition of subsequent layers. These Raman results are in agreement with x-ray diffraction data. Small, local Raman frequency shifts were observed and discussed with respect to partial elastic strain relaxation of the multilayer stack after cleavage, undefined Raman-scattering geometries at the sample edge, and local heating by the laser probe
Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

International Nuclear Information System (INIS)

Avella, M.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Ortiz, M.I.; Ballesteros, C.

2008-01-01

Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO 2 onto Si wafers (in a single run at 390 deg. C and 50 mTorr, using GeH 4 , Si 2 H 6 and O 2 ) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80 K and also at room temperature. The annealing conditions (temperatures ranging from 700 to 1000 deg. C and for times of 30 and 60 s) have been investigated in samples with different diameter of the nanoparticles (from ∼3 to ≥5 nm) and oxide interlayer thickness (15 and 35 nm) in order to establish a correlation between the crystallization of the nanoparticles, the degradation of their composition by Ge diffusion and the intensity of the luminescence emission band. Structures with small nanoparticles (3-4.5 nm) separated by thick oxide barriers (∼35 nm) annealed at 900 deg. C for 60 s yield the maximum intensity of the luminescence. An additional treatment at 450 deg. C in forming gas for dangling-bond passivation increases the intensity of the luminescence band by 25-30%
Strain-induced formation of fourfold symmetric SiGe quantum dot molecules.

Science.gov (United States)

Zinovyev, V A; Dvurechenskii, A V; Kuchinskaya, P A; Armbrister, V A

2013-12-27

The strain field distribution at the surface of a multilayer structure with disklike SiGe nanomounds formed by heteroepitaxy is exploited to arrange the symmetric quantum dot molecules typically consisting of four elongated quantum dots ordered along the [010] and [100] directions. The morphological transition from fourfold quantum dot molecules to continuous fortresslike quantum rings with an increasing amount of deposited Ge is revealed. We examine key mechanisms underlying the formation of lateral quantum dot molecules by using scanning tunneling microscopy and numerical calculations of the strain energy distribution on the top of disklike SiGe nanomounds. Experimental data are well described by a simple thermodynamic model based on the accurate evaluation of the strain dependent part of the surface chemical potential. The spatial arrangement of quantum dots inside molecules is attributed to the effect of elastic property anisotropy.
RBS characterization of the deposition of very thin SiGe/SiO2 multilayers by LPCVD

International Nuclear Information System (INIS)

Munoz-Martin, A.; Climent-Font, A.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

2005-01-01

Multilayer structures consisting of several alternated layers of SiGe and SiO 2 with thickness ranging from 2 or Si as well as the deposition of SiO 2 on Si show negligible incubation times. The deposition of SiO 2 on SiGe, however, exhibits an incubation time of several minutes, which would be related to the oxidation of the surface necessary for the SiO 2 deposition to start. In all cases the film thickness increases linearly with deposition time, thus allowing the growth rates to be determined. These data allow the deposition process of these very thin layers to be accurately controlled
Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

Science.gov (United States)

Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

2010-03-01

It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.
Band structure analysis in SiGe nanowires

Energy Technology Data Exchange (ETDEWEB)

Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

2012-06-05

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.
Band structure analysis in SiGe nanowires

International Nuclear Information System (INIS)

Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

2012-01-01

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.
Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

CERN Document Server

Usami, N

2011-01-01

Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...
Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

KAUST Repository

Dong, Y.

2014-07-26

Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.
Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire.

Science.gov (United States)

Mu, Xin; Wang, Lili; Yang, Xueming; Zhang, Pu; To, Albert C; Luo, Tengfei

2015-11-16

Due to interfacial phonon scattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have very low thermal conductivity, which is very attractive for thermoelectrics. In this paper, we demonstrate using molecular dynamics simulations that the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW). The structural hierarchy introduces defects to disrupt the periodicity of regular SNW and scatters coherent phonons, which are the key contributors to thermal transport in regular SNW. Our simulation results show that periodically arranged defects in Si/Ge H-SNW lead to a ~38% reduction of the already low thermal conductivity of regular Si/Ge SNW. By randomizing the arrangement of defects and imposing additional surface complexities to enhance phonon scattering, further reduction in thermal conductivity can be achieved. Compared to pure Si nanowire, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%. It is concluded that the hierarchical structuring is an effective way of reducing thermal conductivity significantly in SNW, which can be a promising path for improving the efficiency of Si/Ge-based SNW thermoelectrics.
Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

OpenAIRE

Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC

2016-01-01

Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native Si...
The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

Science.gov (United States)

Prakash, A. P. Gnana; Praveen, K. C.; Pushpa, N.; Cressler, John D.

2015-05-01

The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to 60Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.
The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

Energy Technology Data Exchange (ETDEWEB)

Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in; Praveen, K. C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332 (United States)

2015-05-15

The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

International Nuclear Information System (INIS)

Beaty, J.S.; Rolfe, J.L.; Vandersande, J.; Fleurial. J.P.

1992-01-01

This paper reports that a theoretical model has been developed that predicts that the addition of ultra-fine, inert, phonon-scattering centers to SiGe thermoelectric material will reduce its thermal conductivity and improve its figure-of-merit. To investigate this prediction, ultra-fine particulates (20 Angstrom to 200 Angstrom) of boron nitride have been added to boron doped, p-type, 80/20 SiGe. All previous SiGe samples produced from ultra-fine SiGe powder without additions had lower thermal conductivities than standard SiGe, but high temperature (1525 K) heat treatment increased their thermal conductivity back to the value for standard SiGe. Transmission Electron Microscopy has been used to confirm the presence of occluded particulates and X-ray diffraction has been used to determine the composition to be BN
Surface tension and density of Si-Ge melts

Science.gov (United States)

Ricci, Enrica; Amore, Stefano; Giuranno, Donatella; Novakovic, Rada; Tuissi, Ausonio; Sobczak, Natalia; Nowak, Rafal; Korpala, Bartłomiej; Bruzda, Grzegorz

2014-06-01

In this work, the surface tension and density of Si-Ge liquid alloys were determined by the pendant drop method. Over the range of measurements, both properties show a linear temperature dependence and a nonlinear concentration dependence. Indeed, the density decreases with increasing silicon content exhibiting positive deviation from ideality, while the surface tension increases and deviates negatively with respect to the ideal solution model. Taking into account the Si-Ge phase diagram, a simple lens type, the surface tension behavior of the Si-Ge liquid alloys was analyzed in the framework of the Quasi-Chemical Approximation for the Regular Solutions model. The new experimental results were compared with a few data available in the literature, obtained by the containerless method.
Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

International Nuclear Information System (INIS)

Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

2014-01-01

Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model
Conversion Matrix Analysis of SiGe HBT Gilbert Cell Mixers

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

2004-01-01

The frequency response of SiGe HBT active mixers based on the Gilbert cell topology is analyzed theoretically. The time-varying operation of the Gilbert cell mixer is taken into account by applying conversion matrix analysis. The main bandwidth limiting mechanisms experienced in SiGe HBT Gilbert ...
Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

International Nuclear Information System (INIS)

Qin, Guoxuan; Jiang, Ningyue; Seo, Jung-Hun; Cho, Namki; Van der Weide, Daniel; Ma, Zhenqiang; Ponchak, George E; Ma, Pingxi; Stetson, Scott; Racanelli, Marco

2010-01-01

The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔE g /kT) and minimized thermal effects, with little influence on the passive components of the circuits
Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

Directory of Open Access Journals (Sweden)

Chie-In Lee

2016-01-01

Full Text Available Noise parameters of silicon germanium (SiGe heterojunction bipolar transistors (HBTs for different sizes are investigated in the breakdown region for the first time. When the emitter length of SiGe HBTs shortens, minimum noise figure at breakdown decreases. In addition, narrower emitter width also decreases noise figure of SiGe HBTs in the avalanche region. Reduction of noise performance for smaller emitter length and width of SiGe HBTs at breakdown resulted from the lower noise spectral density resulting from the breakdown mechanism. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. The presented analysis can benefit the RF circuits operating in the breakdown region.
Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo

2018-04-14

The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.
Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

Science.gov (United States)

Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

2017-11-01

In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.
Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

Directory of Open Access Journals (Sweden)

Abd Rahim Alhan Farhanah

2017-01-01

Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.
Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

Science.gov (United States)

Huang, Zhong-Mei; Huang, Wei-Qi; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke

2016-12-01

It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.
Heavy Ion Current Transients in SiGe HBTs

Science.gov (United States)

Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.;

2009-01-01

Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

SiGe Integrated Circuit Developments for SQUID/TES Readout

Science.gov (United States)

Prêle, D.; Voisin, F.; Beillimaz, C.; Chen, S.; Piat, M.; Goldwurm, A.; Laurent, P.

2018-03-01

SiGe integrated circuits dedicated to the readout of superconducting bolometer arrays for astrophysics have been developed since more than 10 years at APC. Whether for Cosmic Microwave Background (CMB) observations with the QUBIC ground-based experiment (Aumont et al. in astro-ph.IM, 2016. arXiv:1609.04372) or for the Hot and Energetic Universe science theme with the X-IFU instrument on-board of the ATHENA space mission (Barret et al. in SPIE 9905, space telescopes & instrumentation 2016: UV to γ Ray, 2016. https://doi.org/10.1117/12.2232432), several kinds of Transition Edge Sensor (TES) (Irwin and Hilton, in ENSS (ed) Cryogenic particle detection, Springer, Berlin, 2005) arrays have been investigated. To readout such superconducting detector arrays, we use time or frequency domain multiplexers (TDM, FDM) (Prêle in JINST 10:C08015, 2016. https://doi.org/10.1088/1748-0221/10/08/C08015) with Superconducting QUantum Interference Devices (SQUID). In addition to the SQUID devices, low-noise biasing and amplification are needed. These last functions can be obtained by using BiCMOS SiGe technology in an Application Specific Integrated Circuit (ASIC). ASIC technology allows integration of highly optimised circuits specifically designed for a unique application. Moreover, we could reach very low-noise and wide band amplification using SiGe bipolar transistor either at room or cryogenic temperatures (Cressler in J Phys IV 04(C6):C6-101, 1994. https://doi.org/10.1051/jp4:1994616). This paper discusses the use of SiGe integrated circuits for SQUID/TES readout and gives an update of the last developments dedicated to the QUBIC telescope and to the X-IFU instrument. Both ASIC called SQmux128 and AwaXe are described showing the interest of such SiGe technology for SQUID multiplexer controls.
Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

International Nuclear Information System (INIS)

Jiang, Z.X.; Kim, K.; Lerma, J.; Corbett, A.; Sieloff, D.; Kottke, M.; Gregory, R.; Schauer, S.

2006-01-01

This work explored quantitative analyses of SiGe films on either Si bulk or SOI wafers with low energy SIMS by assuming a constant ratio between the secondary ion yields of Si + and Ge + inside SiGe films. SiGe samples with Ge contents ranging from 15 to 65% have been analyzed with a 1 keV O 2 + beam at normal incidence. For comparison, the samples were also analyzed with RBS and/or AES. The Ge content as measured with SIMS, based on a single SiGe/Si or SiGe/SOI standard, exhibited good agreement with the corresponding RBS and AES data. It was concluded that SIMS was capable of providing accurate characterization of the SiGe composition with the Ge content up to 65%
Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

2018-01-01

that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising
SiGe Based Low Temperature Electronics for Lunar Surface Applications

Science.gov (United States)

Mojarradi, Mohammad M.; Kolawa, Elizabeth; Blalock, Benjamin; Cressler, John

2012-01-01

The temperature at the permanently shadowed regions of the moon's surface is approximately -240 C. Other areas of the lunar surface experience temperatures that vary between 120 C and -180 C during the day and night respectively. To protect against the large temperature variations of the moon surface, traditional electronics used in lunar robotics systems are placed inside a thermally controlled housing which is bulky, consumes power and adds complexity to the integration and test. SiGe Based electronics have the capability to operate over wide temperature range like that of the lunar surface. Deploying low temperature SiGe electronics in a lander platform can minimize the need for the central thermal protection system and enable the development of a new generation of landers and mobility platforms with highly efficient distributed architecture. For the past five years a team consisting of NASA, university and industry researchers has been examining the low temperature and wide temperature characteristic of SiGe based transistors for developing electronics for wide temperature needs of NASA environments such as the Moon, Titan, Mars and Europa. This presentation reports on the status of the development of wide temperature SiGe based electronics for the landers and lunar surface mobility systems.
Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

OpenAIRE

Ji, Pengfei; Zhang, Yuwen; Yang, Mo

2016-01-01

The structural, dynamic, and vibrational properties during the heat transfer process in Si/Ge superlattices, are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) ar...
Substrate Effects in Wideband SiGe HBT Mixer Circuits

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

2005-01-01

are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.......In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations...
The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

Energy Technology Data Exchange (ETDEWEB)

Vinayakprasanna, N. H.; Praveen, K. C.; Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006 (India); Cressler, J. D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta-30332, GA (United States)

2016-05-23

The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h{sub FE} of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.
The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

International Nuclear Information System (INIS)

Vinayakprasanna, N. H.; Praveen, K. C.; Prakash, A. P. Gnana; Cressler, J. D.

2016-01-01

The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h_F_E of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.
Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

International Nuclear Information System (INIS)

Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

2014-01-01

We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

Efficient tunable luminescence of SiGe alloy sheet polymers

International Nuclear Information System (INIS)

Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

2001-01-01

Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics
Electronic structure of O-doped SiGe calculated by DFT + U method

Science.gov (United States)

Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

2016-12-01

To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).
Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires

Energy Technology Data Exchange (ETDEWEB)

Chen, Weifeng; He, Yan; Ouyang, Gang, E-mail: gangouy@hunnu.edu.cn [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications(SICQEA), Hunan Normal University, Changsha 410081 (China); Sun, Changqing [School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

2016-01-15

The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interface bond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core can be modulated through covering with Ge epitaxial layers. The change of thermal conductivity in Si/Ge CSNWs should be attributed to the surface relaxation and interface mismatch between inner Si nanowire and outer Ge epitaxial layer. Our results are in well agreement with the experimental measurements and simulations, suggesting that the presented method provides a fundamental insight of the thermal conductivity of CSNWs from the atomistic origin.
Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

Science.gov (United States)

Shklyaev, A. A.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.

2018-01-01

High temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at ˜400 °C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si substrate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band.
SiGe BiCMOS manufacturing platform for mmWave applications

Science.gov (United States)

Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

2010-10-01

TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.
SiGe derivatization by spontaneous reduction of aryl diazonium salts

Science.gov (United States)

Girard, A.; Geneste, F.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.

2013-10-01

Germanium semiconductors have interesting properties for FET-based biosensor applications since they possess high surface roughness allowing the immobilization of a high amount of receptors on a small surface area. Since SiGe combined low cost of Si and intrinsic properties of Ge with high mobility carriers, we focused the study on this particularly interesting material. The comparison of the efficiency of a functionalization process involving the spontaneous reduction of diazonium salts is studied on Si(1 0 0), SiGe and Ge semiconductors. XPS analysis of the functionalized surfaces reveals the presence of a covalent grafted layer on all the substrates that was confirmed by AFM. Interestingly, the modified Ge derivatives have still higher surface roughness after derivatization. To support the estimated thickness by XPS, a step measurement of the organic layers is done by AFM or by profilometer technique after a O2 plasma etching of the functionalized layer. This original method is well-adapted to measure the thickness of thin organic films on rough substrates such as germanium. The analyses show a higher chemical grafting on SiGe substrates compared with Si and Ge semiconductors.
Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

International Nuclear Information System (INIS)

RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

2007-01-01

The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer
sigE facilitates the adaptation of Bordetella bronchiseptica to stress conditions and lethal infection in immunocompromised mice

Directory of Open Access Journals (Sweden)

Barchinger Sarah E

2012-08-01

Full Text Available Abstract Background The cell envelope of a bacterial pathogen can be damaged by harsh conditions in the environment outside a host and by immune factors during infection. Cell envelope stress responses preserve the integrity of this essential compartment and are often required for virulence. Bordetella species are important respiratory pathogens that possess a large number of putative transcription factors. However, no cell envelope stress responses have been described in these species. Among the putative Bordetella transcription factors are a number of genes belonging to the extracytoplasmic function (ECF group of alternative sigma factors, some of which are known to mediate cell envelope stress responses in other bacteria. Here we investigate the role of one such gene, sigE, in stress survival and pathogenesis of Bordetella bronchiseptica. Results We demonstrate that sigE encodes a functional sigma factor that mediates a cell envelope stress response. Mutants of B. bronchiseptica strain RB50 lacking sigE are more sensitive to high temperature, ethanol, and perturbation of the envelope by SDS-EDTA and certain β-lactam antibiotics. Using a series of immunocompromised mice deficient in different components of the innate and adaptive immune responses, we show that SigE plays an important role in evading the innate immune response during lethal infections of mice lacking B cells and T cells. SigE is not required, however, for colonization of the respiratory tract of immunocompetent mice. The sigE mutant is more efficiently phagocytosed and killed by peripheral blood polymorphonuclear leukocytes (PMNs than RB50, and exhibits decreased cytotoxicity toward macrophages. These altered interactions with phagocytes could contribute to the defects observed during lethal infection. Conclusions Much of the work on transcriptional regulation during infection in B. bronchiseptica has focused on the BvgAS two-component system. This study reveals that the SigE
Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

Science.gov (United States)

De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

1996-08-01

This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.
Heteroepitaxial Growth of Vacuum-Evaporated Si-Ge Films on Nano structured Silicon Substrates

International Nuclear Information System (INIS)

Ayu Wazira Azhari; Ayu Wazira Azhari; Kamaruzzaman Sopian; Saleem Hussain Zaidi

2015-01-01

In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: for example polished Si, Si micro pyramids and Si nano pillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nano pillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000 degree Celsius to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications. (author)
Templated self-assembly of SiGe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Dais, Christian

2009-08-19

This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three
Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

International Nuclear Information System (INIS)

Cheng Xinli; Chen Zhijun; Wang Yongjin; Jin Bo; Zhang Feng; Zou Shichang

2005-01-01

SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI
SigE Is a Chaperone for the Salmonella enterica Serovar Typhimurium Invasion Protein SigD

OpenAIRE

Darwin, K. Heran; Robinson, Lloyd S.; Miller, Virginia L.

2001-01-01

SigD is translocated into eucaryotic cells by a type III secretion system. In this work, evidence that the putative chaperone SigE directly interacts with SigD is presented. A bacterial two-hybrid system demonstrated that SigE can interact with itself and SigD. In addition, SigD was specifically copurified with SigE-His6 on a nickel column.
Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

Science.gov (United States)

Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

2015-11-06

We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.
Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

International Nuclear Information System (INIS)

Chen Liang; Zhang Wan-Rong; Jin Dong-Yue; Shen Pei; Xie Hong-Yun; Ding Chun-Bao; Xiao Ying; Sun Bo-Tao; Wang Ren-Qing

2011-01-01

A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions. (interdisciplinary physics and related areas of science and technology)
Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs

Science.gov (United States)

Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Dodd, Paul E.; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philippe; Duhamel, Olivier; Phillips, Stanley D.;

2009-01-01

SiGe HBT heavy ion current transients are measured using microbeam and both high- and low-energy broadbeam sources. These new data provide detailed insight into the effects of ion range, LET, and strike location.

De-embedding and Modelling of pnp SiGe HBTs

DEFF Research Database (Denmark)

Hadziabdic, Dzenan; Jiang, Chenhui; Johansen, Tom Keinicke

2007-01-01

In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to accoun...
Critical Role of a Single Position in the −35 Element for Promoter Recognition by Mycobacterium tuberculosis SigE and SigH▿

OpenAIRE

Song, Taeksun; Song, Seung-Eun; Raman, Sahadevan; Anaya, Mauricio; Husson, Robert N.

2008-01-01

Mycobacterial SigE and SigH both initiate transcription from the sigB promoter, suggesting that they recognize similar sequences. Through mutational and primer extension analyses, we determined that SigE and SigH recognize nearly identical promoters, with differences at the 3′ end of the −35 element distinguishing between SigE- and SigH-dependent promoters.
Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

DEFF Research Database (Denmark)

Lu, Weifang; Li, Cheng; Lin, Guangyang

2015-01-01

Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...
A note on the Sumerian expression SI-ge4-de3/dam

Directory of Open Access Journals (Sweden)

Widell, Magnus

2002-12-01

Full Text Available The expression SI-ge4-dam/de3 appears in some of the loan documents of the Ur III period where it was used to establish the interest rate or the loan fee. In addition, it is sometimes preceded by ki-ba 'in its/this place/ground' or, in some cases, ma2 -a 'in the boat'. The regular verb SI.g was closely related, perhaps even synonymous with, the reduplication verb ḡar/ḡa2-ḡa2 'to put' or 'to place'. While it may be concluded that SI-ge4-dam/de3 had nothing to do with the verb si 'to fill' or gi4 'to return', the correct analysis of the expression remains somewhat uncertain. The article proposes that the SI should be read se and understood as a phonetic writing for the regular verb se3.g 'to put', 'to place'. The combination of the verb with the ki-ba may suggest that a more parochial form of keeping products existed side by side with the large centralized granaries and storehouses of the city.La expresión SI-ge4-dam/de3 aparece en algunos contratos de préstamo del período de Ur III, donde se empleaba para determinar el interés de dicho préstamo. Por otra parte, este término se hallaba a veces precedido de ki-ba 'en su/este lugar/suelo', y en algunos casos por ma2 -a 'en la barca'. El verbo regular SI.g está muy relacionado (quizás es incluso sinónimo con el verbo de la clase de la reduplicación ḡar/ḡa2-ḡa2 'poner' o 'colocar'. Mientras que puede concluirse que SI-ge4-dam/de3 no tiene nada que ver con el verbo si 'llenar', ni con gi4 'regresar, devolver', el análisis correcto de la expresión sigue siendo, de algún modo, incierto. En el artículo se propone que SI puede leerse como se , entendiéndolo como una escritura fonética del verbo regular se3.g 'poner', 'colocar'. La combinación del verbo con ki-ba podría indicar que, junto a los grandes graneros y almacenes centrales de la ciudad, había un modo distinto y más modesto de conservar los productos.

Nitride passivation of the interface between high-k dielectrics and SiGe

Energy Technology Data Exchange (ETDEWEB)

Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

2016-01-04

In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.
Significant reduction of thermal conductivity in Si/Ge core-shell nanowires.

Science.gov (United States)

Hu, Ming; Giapis, Konstantinos P; Goicochea, Javier V; Zhang, Xiaoliang; Poulikakos, Dimos

2011-02-09

We report on the effect of germanium (Ge) coatings on the thermal transport properties of silicon (Si) nanowires using nonequilibrium molecular dynamics simulations. Our results show that a simple deposition of a Ge shell of only 1 to 2 unit cells in thickness on a single crystalline Si nanowire can lead to a dramatic 75% decrease in thermal conductivity at room temperature compared to an uncoated Si nanowire. By analyzing the vibrational density states of phonons and the participation ratio of each specific mode, we demonstrate that the reduction in the thermal conductivity of Si/Ge core-shell nanowire stems from the depression and localization of long-wavelength phonon modes at the Si/Ge interface and of high frequency nonpropagating diffusive modes.
Effect of Synthesis Procedure on Thermoelectric Property of SiGe Alloy

Science.gov (United States)

Li, Jing; Han, Jun; Jiang, Tao; Luo, Lili; Xiang, Yongchun

2018-05-01

SiGe thermoelectric material has been synthesized by ball milling combined with hot pressing (HP) or spark plasma sintering (SPS). Effects of ball milling time, powder to ball weight ratio and sintering method on microstructure and thermoelectric properties of SiGe are studied. The results show that longer ball milling time leads to decreased density and worse electrical properties. In the sintering process, SPS results in much larger density and better electrical properties than HP. The Si0.795Ge0.2B0.005 sample prepared by 2 h ball milling combined with SPS obtains a maximum power factor of 3.0 mW m-1 K-2 at 860 K and ZT of 0.95 at 1000 K.
Diffusion of $^{56}$Co in GaAs and SiGe alloys

CERN Multimedia

Koskelo, O K

2007-01-01

Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of cobalt in GaAs and SiGe alloys under intrinsic conditions. In the literature only three previous studies for Co diffusion in GaAs may be found and the results differ by over four orders of magnitude from each other. For Co diffusion in SiGe alloys no previous data is available in the literature. For Co diffusion in Ge one study may be found but the results have been obtained with material having increased dislocation density. For dislocation-free material no previous measurements are available. For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{56}$Co$^{+}$ ion beam.
Transformation of point defects under annealing of neutron-irradiated Si and Si:Ge

International Nuclear Information System (INIS)

Pomozov, Yu.V.; Khirunenko, L.I.; Shakhovtsev, V.I.; Yashnik, V.I.

1990-01-01

Transformation of point radiation defects under isochronous annealing of neurton-irradaited Si and Si:Ge is studied. It is determined, that occurence of several new centers which produce A-centre range absorption bands is observed at annealing within 423-493 K temperature range. It is shown that vacancy and oxygen are included in the centers composition. It is found that VO centre transformation into VO 2 at annealing occurs via intermediate stage in contrast to that occuring in electron-irradiated crystals via VO direct diffusion to interstitial oxygen. Transformation of centers under Si ansd Si:Ge annealing occurs similarly
270GHz SiGe BiCMOS manufacturing process platform for mmWave applications

Science.gov (United States)

Kar-Roy, Arjun; Preisler, Edward J.; Talor, George; Yan, Zhixin; Booth, Roger; Zheng, Jie; Chaudhry, Samir; Howard, David; Racanelli, Marco

2011-11-01

TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors. Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband imaging are presented.
Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane

Energy Technology Data Exchange (ETDEWEB)

Abedin, A., E-mail: aabedin@kth.se; Moeen, M.; Cappetta, C.; Östling, M.; Radamson, H.H., E-mail: rad@kth.se

2016-08-31

This work investigates the crystal quality of SiGe layers grown at low temperatures using trisilane, and germane precursors. The crystal quality sensitivity was monitored for hydrogen chloride and/or minor oxygen amount during SiGe epitaxy or at the interface of SiGe/Si layers. The quality of the epi-layers was examined by quantifying noise parameter, K{sub 1/f} obtained from the power spectral density vs. 1/f curves. The results indicate that while it is difficult to detect small defect densities in SiGe layers by physical material characterization, the noise measurement could reveal the effects of oxygen contamination as low as 0.16 mPa inside and in the interface of the layers. - Highlights: • SiGe layers were grown using trisilane and germane. • Effect of HCl flow on Ge content and growth rate was investigated. • O{sub 2} partial pressures up to 4.3 mPa did not affect x-ray diffraction pattern. • O{sub 2} partial pressures as low as 0.16 mPa increased the noise level. • HCl increased metal contaminations of the layers and the noise level consequently.
Extended x-ray absorption fine structure studies of amorphous and crystalline Si-Ge alloys with synchrotron radiation

International Nuclear Information System (INIS)

Kajiyama, Hiroshi

1988-01-01

Extended X-ray absorption fine structure (EXAFS) is a powerful probe to study the local structure around the atom of a specific element. In conventional EXAFS analysis, it has been known that reliable structures are obtained with the different values of absorption edge energy for different neighboring atoms. It is shown in this study that the Ge-K edge EXAFS resulting from the Ge-Ge and Ge-Si bonds in hydrogenated amorphous Si-Ge alloys was able to be excellently explained by a unique absorption edge energy value, provided that a newly developed formula based on the spherical wave function of photoelectrons is used. The microscopic structures of hydrogenated amorphous Si-Ge alloys and crystalline Si-Ge alloys have been determined using the EXAFS method. The lengths of Ge-Ge and Ge-Si bonds were constant throughout their entire composition range, and it was found that the length of Ge-Si bond was close to the average value of the bond lengths of both Ge and Si crystals. In crystalline Si-Ge alloys, it has been shown that the bonds relaxed completely, while the lattice constant varied monotonously with the composition. (Kako, I.)
Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

DEFF Research Database (Denmark)

Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

2006-01-01

.5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated......Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat...... conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7...
Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.

Science.gov (United States)

Dhungana, Kamal B; Jaishi, Meghnath; Pati, Ranjit

2016-07-13

The sustained advancement in semiconducting core-shell nanowire technology has unlocked a tantalizing route for making next generation field effect transistor (FET). Understanding how to control carrier mobility of these nanowire channels by applying a gate field is the key to developing a high performance FET. Herein, we have identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart. A quantum transport approach is used to investigate the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si-Ge core-shell nanowire quantum dot FETs. Our calculations reveal that for the ON state, the gate-field induced transverse localization of the wave function restricts the carrier transport to the outer (shell) layer with the pz orbitals providing the pathway for tunneling of electrons in the channels. The higher ON state current in the Si-Ge core-shell nanowire FET is attributed to the pz orbitals that are distributed over the entire channel; in the case of Si nanowire, the participating pz orbital is restricted to a few Si atoms in the channel resulting in a smaller tunneling current. Within the gate bias range considered here, the transconductance is found to be substantially higher in the case of a Si-Ge core-shell nanowire FET than in a Si nanowire FET, which suggests a much higher mobility in the Si-Ge nanowire device.
Low thermal budget surface preparation of Si and SiGe

International Nuclear Information System (INIS)

Abbadie, A.; Hartmann, J.M.; Holliger, P.; Semeria, M.N.; Besson, P.; Gentile, P.

2004-01-01

Using a two-step cleaning, we have investigated the low thermal budget surface preparation of Si and Si 1-x Ge x (x=0.2-0.33). It consists of an ex situ 'HF-last' wet-cleaning and an in situ low thermal budget H 2 bake in a reduced pressure-chemical vapor deposition reactor. Using secondary ion mass spectrometry, we have evaluated the effects of different H 2 bake temperatures (in between 750 and 850 deg. C for 2 min) on the removal efficiency of C, O and F atoms still present on the surface of Si and SiGe virtual substrates after the 'HF-last' wet-cleaning. We have then examined the impact of the (wet-cleaning+H 2 bake) combination on the surface cross-hatch of SiGe as-grown virtual substrates, focusing on the analysis, notably by atomic force microscopy, of the surface topography before and after the miscellaneous thermal treatments. In situ hydrogen baking steps in between 775 and 850 deg. C do not modify the surface morphology and roughness. An easy and rapid optical characterization method, i.e. the optical interferometry, is presented as well to monitor in line the morphological changes induced by such processing steps as chemical mechanical polishing, wet-cleaning, H 2 bake, etc. Despite the lower resolution of the optical profilometer, the surface roughness values coming from it have been correctly correlated with those obtained from AFM. An optimized 'HF-last' wet-cleaning using a diluted chemistry in conjunction with a H 2 bake at 800 deg. C for 2 min (775 deg. C, 2') is a good compromise for SiGe (Si) surface preparation
Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.

Science.gov (United States)

Buljan, M; Radić, N; Sancho-Paramon, J; Janicki, V; Grenzer, J; Bogdanović-Radović, I; Siketić, Z; Ivanda, M; Utrobičić, A; Hübner, R; Weidauer, R; Valeš, V; Endres, J; Car, T; Jerčinović, M; Roško, J; Bernstorff, S; Holy, V

2015-02-13

We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.
Technology computer aided design for Si, SiGe and GaAs integrated circuits

CERN Document Server

Armstrong, GA

2007-01-01

The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-
Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

International Nuclear Information System (INIS)

Liu, Li-Jung; Chang-Liao, Kuei-Shu; Jian, Yi-Chuen; Wang, Tien-Ko; Tsai, Ming-Jinn

2013-01-01

P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel
Boron diffusion in strained and strain-relaxed SiGe

International Nuclear Information System (INIS)

Wang, C.C.; Sheu, Y.M.; Liu, Sally; Duffy, R.; Heringa, A.; Cowern, N.E.B.; Griffin, P.B.

2005-01-01

SiGe has been utilized for aggressive CMOS technologies development recently and there are many references [M. Shima, T. Ueno, T. Kumise, H. Shido, Y. Sakuma, S. Nakamura, Symposium on VLSI Technology Technical Digest, 2002, pp. 94-95; T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, M. Bohr, International Electron Devices Meeting Technical Digest, December 2003, pp. 978-980; P. Bai, C. Auth, S. Balakrishnan, M. Bost, R. Brain, V. Chikarmane, R. Heussner, M. Hussein, J. Hwang, D. Ingerly, R. James, J. Jeong, C. Kenyon, E. Lee, S. Lee, N. Lindert, M. Liu, Z. Ma, T. Marieb, A. Murthy, R. Nagisetty, S. Natarajan, J. Neirynck, A. Ott, C. Parker, J. Sebastian, R. Shaheed, S. Sivakumar, J. Steigerwald, S. Tyagi, C. Weber, B. Woolery, A. Yeoh, K. Zhang, M. Bohr, International Electron Devices Meeting Technical Digest, December 2004, pp. 657-660] presenting the advantages brought by it. A better understanding regarding the boron diffusion behavior within and in the vicinity of SiGe is necessary to optimize the extension and the source/drain in pMOSFET. In order to achieve the goal, both effects from mechanical strain and Ge doping on boron diffusion have been investigated. However, only a few publications discuss the impacts of both. Furthermore, most researches investigate these two effects under the conditions of low boron concentration [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys. 94 (September (6)) (2003) 3883-3890] and high thermal budget anneal [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl
Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

International Nuclear Information System (INIS)

Ghosh, Swapnadip; Kaiser, Daniel; Sinno, Talid; Bonilla, Jose; Han, Sang M.

2015-01-01

While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si 0.8 Ge 0.2 wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si 0.8 Ge 0.2 bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures
Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

Energy Technology Data Exchange (ETDEWEB)

Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Yang, Mo [College of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)

2013-12-21

The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.
Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

International Nuclear Information System (INIS)

Ji, Pengfei; Zhang, Yuwen; Yang, Mo

2013-01-01

The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective
Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

Science.gov (United States)

Ji, Pengfei; Zhang, Yuwen; Yang, Mo

2013-12-01

The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.
Ion beam analysis of the dry thermal oxidation of thin polycrystalline SiGe films

International Nuclear Information System (INIS)

Kling, A.; Soares, J.C.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

2005-01-01

Nanoparticles of Ge embedded in a formed dielectric matrix appear as very promising systems for electronic and photonic applications. We present here an exhaustive characterization of the oxidation process of polycrystalline SiGe layers from the starting of its oxidation process to the total oxidation of it. We have characterized the process by RBS, FTIR and Raman spectroscopy, showing the necessity to use different techniques in order to get a full view of the process. First the Si-Si and Si-Ge bonds are oxidized growing SiO 2 , and Ge segregates from the SiO 2 . As soon as all Si is oxidized GeO 2 is growing gradually. RBS has demonstrated to be very useful to characterize the SiO 2 and the remaining non-oxidized poly-SiGe layer thickness, as well as for the determination of the Ge fraction, where the high sensitivity of this technique allows to explore its whole range. On the other hand, for the reliable determination of the GeO 2 thickness, information on the amount of Ge-O bonding had to be obtained from FTIR spectra. Raman spectroscopy yields detailed information about the oxidation processes for different bonds (Si-Si, Si-Ge, Ge-Ge)

Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs

Energy Technology Data Exchange (ETDEWEB)

Praveen, K.C.; Pushpa, N.; Naik, P.S. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570 006 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA (United States); Tripathi, Ambuj [Inter University Accelerator Centre (IUAC), New Delhi 110 067 (India); Gnana Prakash, A.P., E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570 006 (India)

2012-02-15

Highlights: Black-Right-Pointing-Pointer Total dose effects of 50 MeV Li3+ ion on 50 GHz SiGe HBTs is investigated. Black-Right-Pointing-Pointer Ion irradiated results were compared with Co-60 gamma results. Black-Right-Pointing-Pointer 50 MeV Li ions create more damage in E-B spacer oxide when compared to Co-60 gamma radiation. Black-Right-Pointing-Pointer Co-60 gamma radiation create more damage in STI oxide when compared to 50 MeV Li ions. Black-Right-Pointing-Pointer Worst case total dose radiation effects can be studied using Pelletron accelerator facilities. - Abstract: We have investigated the effects of 50 MeV lithium ion irradiation on the DC electrical characteristics of first-generation silicon-germanium heterojunction bipolar transistors (50 GHz SiGe HBTs) in the dose range of 600 krad to 100 Mrad. The results of 50 MeV Li{sup 3+} ion irradiation on the SiGe HBTs are compared with 63 MeV proton and Co-60 gamma irradiation results in the same dose range in order to understand the damage induced by different LET species. The radiation response of emitter-base (EB) spacer oxide and shallow trench isolation (STI) oxide to different irradiation types are discussed in this paper. We have also focused on the efficacy in the application of a Pelletron accelerator to study total dose irradiation studies in SiGe HBTs.
Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

Science.gov (United States)

Nahali, Masoud; Mehri, Ali

2018-06-01

The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.
Sulfur passivation for the formation of Si-terminated Al{sub 2}O{sub 3/}SiGe(0 0 1) interfaces

Energy Technology Data Exchange (ETDEWEB)

Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, CA (United States); Tang, Kechao [Department of Materials Science and Engineering, Stanford University, CA (United States); Park, Sangwook; Kim, Hyonwoong [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Madisetti, Shailesh [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, CA (United States); Oktyabrsky, Serge [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES USA, Inc., Albany, NY (United States); Yoshida, Noami; Kachian, Jessica [Applied Materials, Inc., Santa Clara, CA (United States); Kummel, Andrew, E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States)

2016-03-15

Graphical abstract: - Highlights: • Effect of wet sulfur passivation on the electrical properties of Al{sub 2}O{sub 3}/SiGe(0 0 1) interfaces has been determined. • EOT of 2.1 nm has been achieved for ALD Al{sub 2}O{sub 3} deposited directly on SiGe(0 0 1) surfaces. • Sulfur passivation has been found to passivate the Al{sub 2}O{sub 3} interface with Si−O−Al bonds. • Sulfur passivation is found to significantly reduce the GeO{sub x} or Ge−O−Al content at the Al{sub 2}O{sub 3}/SiGe interface therefore improving the reliability. • Sulfur passivation extends the surface stability prior to oxide ALD to up to an hour with no dramatic change in D{sub it}, C{sub ox} or V{sub FB} of the resulting devices. - Abstract: Sulfur passivation is used to electrically and chemically passivate the silicon–germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al{sub 2}O{sub 3}). The electrical properties of the interfaces were examined by variable frequency capacitance–voltage (C–V) spectroscopy. Interface compositions were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The sulfur adsorbs to a large fraction of surface sites on the SiGe(0 0 1) surface, protecting the surface from deleterious surface reactions during processing. Sulfur passivation (a) improved the air stability of the cleaned surfaces prior to ALD, (b) increased the stability of the surface during high-temperature deposition, and (c) increased the Al{sub 2}O{sub 3} ALD nucleation density on SiGe, thereby lowering the leakage current. S passivation suppressed formation of Ge−O bonds at the interface, leaving the majority of the Al{sub 2}O{sub 3}–SiGe interface terminated with direct Si−O−Al bonding.
Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures.

Science.gov (United States)

Kandemir, Ali; Ozden, Ayberk; Cagin, Tahir; Sevik, Cem

2017-01-01

Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices. Among these methods, equilibrium molecular dynamics (EMD) is an accurate technique to predict lattice thermal conductivity. In this study, by means of systematic EMD simulations, thermal conductivity of bulk Si-Ge structures (pristine, alloy and superlattice) and their nanostructured one dimensional forms with square and circular cross-section geometries (asymmetric and symmetric) are calculated for different crystallographic directions. A comprehensive temperature analysis is evaluated for selected structures as well. The results show that one-dimensional structures are superior candidates in terms of their low lattice thermal conductivity and thermal conductivity tunability by nanostructuring, such as by diameter modulation, interface roughness, periodicity and number of interfaces. We find that thermal conductivity decreases with smaller diameters or cross section areas. Furthermore, interface roughness decreases thermal conductivity with a profound impact. Moreover, we predicted that there is a specific periodicity that gives minimum thermal conductivity in symmetric superlattice structures. The decreasing thermal conductivity is due to the reducing phonon movement in the system due to the effect of the number of interfaces that determine regimes of ballistic and wave transport phenomena. In some nanostructures, such as nanowire superlattices, thermal conductivity of the Si/Ge system can be reduced to nearly twice that of an amorphous silicon thermal conductivity. Additionally, it is found that one crystal orientation, [Formula: see text]100[Formula: see text], is better than the [Formula: see text]111[Formula: see text] crystal orientation in one-dimensional and bulk SiGe systems. Our results clearly point out the importance of lattice thermal conductivity
Total dose hardness of a commercial SiGe BiCMOS technology

International Nuclear Information System (INIS)

Van Vonno, N.; Lucas, R.; Thornberry, D.

1999-01-01

Over the past decade SiGe HBT technology has progress from the laboratory to actual commercial applications. When integrated into a BiMOS process, this technology has applications in low-cost space systems. In this paper, we report results of total dose testing of a SiGe/CMOS process accessible through a commercial foundry. (authors)
Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

Science.gov (United States)

Cui, J; Lv, Y; Yang, X J; Fan, Y L; Zhong, Z; Jiang, Z M

2011-03-25

The size uniformity of self-assembled SiGe quantum rings, which are formed by capping SiGe quantum dots with a thin Si layer, is found to be greatly influenced by the growth temperature and the areal density of SiGe quantum dots. Higher growth temperature benefits the size uniformity of quantum dots, but results in low Ge concentration as well as asymmetric Ge distribution in the dots, which induces the subsequently formed quantum rings to be asymmetric in shape or even broken somewhere in the ridge of rings. Low growth temperature degrades the size uniformity of quantum dots, and thus that of quantum rings. A high areal density results in the expansion and coalescence of neighboring quantum dots to form a chain, rather than quantum rings. Uniform quantum rings with a size dispersion of 4.6% and an areal density of 7.8×10(8) cm(-2) are obtained at the optimized growth temperature of 640°C.
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Energy Technology Data Exchange (ETDEWEB)

Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

2015-03-14

The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.
Integrated X-band FMCW front-end in SiGe BiCMOS

NARCIS (Netherlands)

Suijker, Erwin; de Boer, Lex; Visser, Guido; van Dijk, Raymond; Poschmann, Michael; van Vliet, Frank Edward

2010-01-01

An integrated X-band FMCW front-end is reported. The front-end unites the core functionality of an FMCW transmitter and receiver in a 0.25 μm SiGe BiCMOS process. The chip integrates a PLL for the carrier generation, and single-side band and image-reject mixers for up- and down-conversion of the
Interfacial behaviour of biopolymer multilayers

NARCIS (Netherlands)

Corstens, Meinou N.; Osorio Caltenco, Lilia A.; Vries, de Renko; Schroën, Karin; Berton-Carabin, Claire C.

2017-01-01

Although multilayered emulsions have been related to reduced lipolysis, the involved interfacial phenomena have never been studied directly. In this work, we systematically built multilayers of whey protein and pectin, which we further subjected to digestive conditions, using two different
On the interplay between phonon-boundary scattering and phonon-point-defect scattering in SiGe thin films

Science.gov (United States)

Iskandar, A.; Abou-Khalil, A.; Kazan, M.; Kassem, W.; Volz, S.

2015-03-01

This paper provides theoretical understanding of the interplay between the scattering of phonons by the boundaries and point-defects in SiGe thin films. It also provides a tool for the design of SiGe-based high-efficiency thermoelectric devices. The contributions of the alloy composition, grain size, and film thickness to the phonon scattering rate are described by a model for the thermal conductivity based on the single-mode relaxation time approximation. The exact Boltzmann equation including spatial dependence of phonon distribution function is solved to yield an expression for the rate at which phonons scatter by the thin film boundaries in the presence of the other phonon scattering mechanisms. The rates at which phonons scatter via normal and resistive three-phonon processes are calculated by using perturbation theories with taking into account dispersion of confined acoustic phonons in a two dimensional structure. The vibrational parameters of the model are deduced from the dispersion of confined acoustic phonons as functions of temperature and crystallographic direction. The accuracy of the model is demonstrated with reference to recent experimental investigations regarding the thermal conductivity of single-crystal and polycrystalline SiGe films. The paper describes the strength of each of the phonon scattering mechanisms in the full temperature range. Furthermore, it predicts the alloy composition and film thickness that lead to minimum thermal conductivity in a single-crystal SiGe film, and the alloy composition and grain size that lead to minimum thermal conductivity in a polycrystalline SiGe film.
Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

Science.gov (United States)

Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

2015-04-01

Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.
Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nano wires for Biochemical Sensors

International Nuclear Information System (INIS)

Chang, K.; Chen, C.; Kuo, P.; Chen, Y.; Chang, T.; Lai, C.; Whang, A. J.; Lai, Y.; Chen, H.; Hsieh, I.

2014-01-01

Nano wires are widely used as highly sensitive sensors for electrical detection of biological and chemical species. Modifying the band structure of strained-Si metal-oxide-semiconductor field-effect transistors by applying the in-plane tensile strain reportedly improves electron and hole mobility. The oxidation-induced Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and substantially increases hole mobility. However, oxidation increases the number of surface states, resulting in hole mobility degradation. In this work, 3-aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent. The hydroxyl molecule on the oxide surface was replaced by the methoxy groups of the APTMS molecule. We proposed a surface plasma treatment to improve the electrical properties of SiGe nano wires. Fluorine plasma treatment can result in enhanced rates of thermal oxidation and speed up the formation of a self-passivation oxide layer. Like a capping oxide layer, the self-passivation oxide layer reduces the rate of follow-up oxidation. Pre oxidation treatment also improved the sensitivity of SiGe nano wires because the Si-F binding was held at a more stable interface state compared to bare nano wire on the SiGe surface. Additionally, the sensitivity can be further improved by either the N 2 plasma posttreatment or the low-temperature post annealing due to the suppression of out diffusion of Ge and F atoms from the SiGe nano wire surface.
Alternative Sigma Factors SigF, SigE, and SigG Are Essential for Sporulation in Clostridium botulinum ATCC 3502

OpenAIRE

Kirk, David G.; Zhang, Zhen; Korkeala, Hannu; Lindström, Miia

2014-01-01

Clostridium botulinum produces heat-resistant endospores that may germinate and outgrow into neurotoxic cultures in foods. Sporulation is regulated by the transcription factor Spo0A and the alternative sigma factors SigF, SigE, SigG, and SigK in most spore formers studied to date. We constructed mutants of sigF, sigE, and sigG in C. botulinum ATCC 3502 and used quantitative reverse transcriptase PCR and electron microscopy to assess their expression of the sporulation pathway on transcription...
Interfacial effects in multilayers

International Nuclear Information System (INIS)

Barbee, T.W. Jr.

1998-01-01

Interfacial structure and the atomic interactions between atoms at interfaces in multilayers or nano-laminates have significant impact on the physical properties of these materials. A technique for the experimental evaluation of interfacial structure and interfacial structure effects is presented and compared to experiment. In this paper the impact of interfacial structure on the performance of x-ray, soft x-ray and extreme ultra-violet multilayer optic structures is emphasized. The paper is concluded with summary of these results and an assessment of their implications relative to multilayer development and the study of buried interfaces in solids in general
Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain

International Nuclear Information System (INIS)

Peng Xihong; Tang Fu; Logan, Paul

2011-01-01

Strain modulated electronic properties of Si/Ge core-shell nanowires along the [110] direction were reported, on the basis of first principles density-functional theory calculations. In particular, the energy dispersion relationship of the conduction/valence band was explored in detail. At the Γ point, the energy levels of both bands are significantly altered by applied uniaxial strain, which results in an evident change of the band gap. In contrast, for the K vectors far away from Γ, the variation of the conduction/valence band with strain is much reduced. In addition, with a sufficient tensile strain (∼1%), the valence band edge shifts away from Γ, which indicates that the band gap of the Si/Ge core-shell nanowires experiences a transition from direct to indirect. Our studies further showed that effective masses of charge carriers can also be tuned using the external uniaxial strain. The effective mass of the hole increases dramatically with tensile strain, while strain shows a minimal effect on tuning the effective mass of the electron. Finally, the relation between strain and the conduction/valence band edge is discussed thoroughly in terms of site-projected wavefunction characters.
Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

Science.gov (United States)

Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

2016-02-01

Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal
SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

OpenAIRE

Pan, Hsuan-yu

2010-01-01

This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in- dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio's Quad. A broadband linear amplifier with 46dBm OIP₃ at 20MHz, 34dBm OIP₃ at 1GHz, 6dB noise figure and 10.3dBm P₁dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain...
Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands

Science.gov (United States)

Chang, Yuan-Ming; Jian, Sheng-Rui; Juang, Jenh-Yih

2010-09-01

A lithography-free method for fabricating the nanogrids and quasi-beehive nanostructures on Si substrates is developed. It combines sequential treatments of thermal annealing with reactive ion etching (RIE) on SiGe thin films grown on (100)-Si substrates. The SiGe thin films deposited by ultrahigh vacuum chemical vapor deposition form self-assembled nanoislands via the strain-induced surface roughening (Asaro-Tiller-Grinfeld instability) during thermal annealing, which, in turn, serve as patterned sacrifice regions for subsequent RIE process carried out for fabricating nanogrids and beehive-like nanostructures on Si substrates. The scanning electron microscopy and atomic force microscopy observations confirmed that the resultant pattern of the obtained structures can be manipulated by tuning the treatment conditions, suggesting an interesting alternative route of producing self-organized nanostructures.
Neutron optics with multilayer monochromators

International Nuclear Information System (INIS)

Saxena, A.M.; Majkrzak, C.F.

1984-01-01

A multilayer monochromator is made by depositing thin films of two materials in an alternating sequence on a glass substrate. This makes a multilayer periodic in a direction perpendicular to the plane of the films, with a d-spacing equal to the thickness of one bilayer. Neutrons of wavelength λ incident on a multilayer will be reflected at an angle phi given by the Bragg relation nλ = 2d sinphi, where n is the order of reflection. The use of thin-film multilayers for monochromating neutrons is discussed. Because of the low flux of neutrons, the samples have to be large, and the width of the incident beam can be as much as 2 cm. Multilayers made earlier were fabricated by resistive heating of the materials in a vacuum chamber. Because of geometrical constraints imposed by the size of the vacuum chamber, limits on the amount of material that can be loaded in a boat, and finite life of the boats, this method of preparation limits the length of a multilayer to ∼ 15 cm and the total number of bilayers in a multilayer to about 200. This paper discusses a thin-film deposition system using RF sputtering for depositing films
Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

Science.gov (United States)

Rozé, Fabien; Gourhant, Olivier; Blanquet, Elisabeth; Bertin, François; Juhel, Marc; Abbate, Francesco; Pribat, Clément; Duru, Romain

2017-06-01

The fabrication of ultrathin compressively strained SiGe-On-Insulator layers by the condensation technique is likely a key milestone towards low-power and high performances FD-SOI logic devices. However, the SiGe condensation technique still requires challenges to be solved for an optimized use in an industrial environment. SiGe oxidation kinetics, upon which the condensation technique is founded, has still not reached a consensus in spite of various studies which gave insights into the matter. This paper aims to bridge the gaps between these studies by covering various oxidation processes relevant to today's technological needs with a new and quantitative analysis methodology. We thus address oxidation kinetics of SiGe with three Ge concentrations (0%, 10%, and 30%) by means of dry rapid thermal oxidation, in-situ steam generation oxidation, and dry furnace oxidation. Oxide thicknesses in the 50 Å to 150 Å range grown with oxidation temperatures between 850 and 1100 °C were targeted. The present work shows first that for all investigated processes, oxidation follows a parabolic regime even for thin oxides, which indicates a diffusion-limited oxidation regime. We also observe that, for all investigated processes, the SiGe oxidation rate is systematically higher than that of Si. The amplitude of the variation of oxidation kinetics of SiGe with respect to Si is found to be strongly dependent on the process type. Second, a new quantitative analysis methodology of oxidation kinetics is introduced. This methodology allows us to highlight the dependence of oxidation kinetics on the Ge concentration at the oxidation interface, which is modulated by the pile-up mechanism. Our results show that the oxidation rate increases with the Ge concentration at the oxidation interface.

Ordered Arrays of SiGe Islands from Low-Energy PECVD

Directory of Open Access Journals (Sweden)

Chrastina D

2010-01-01

Full Text Available Abstract SiGe islands have been proposed for applications in the fields of microelectronics, optoelectronics and thermoelectrics. Although most of the works in literature are based on MBE, one of the possible advantages of low-energy plasma-enhanced chemical vapor deposition (LEPECVD is a wider range of deposition rates, which in turn results in the possibility of growing islands with a high Ge concentration. We will show that LEPECVD can be effectively used for the controlled growth of ordered arrays of SiGe islands. In order to control the nucleation of the islands, patterned Si (001 substrates were obtained by e-beam lithography (EBL and dry etching. We realized periodic circular pits with diameters ranging from 80 to 300 nm and depths from 65 to 75 nm. Subsequently, thin films (0.8–3.2 nm of pure Ge were deposited by LEPECVD, resulting in regular and uniform arrays of Ge-rich islands. LEPECVD allowed the use of a wide range of growth rates (0.01–0.1 nm s−1 and substrates temperatures (600–750°C, so that the Ge content of the islands could be varied. Island morphology was characterized by AFM, while μ-Raman was used to analyze the Ge content inside the islands and the composition differences between islands on patterned and unpatterned areas of the substrate.
Investigating ESD sensitivity in electrostatic SiGe MEMS

International Nuclear Information System (INIS)

Sangameswaran, Sandeep; De Coster, Jeroen; Linten, Dimitri; Scholz, Mirko; Thijs, Steven; Groeseneken, Guido; De Wolf, Ingrid

2010-01-01

The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.
A Passive X-Band Double Balanced Mixer Utilizing Diode Connected SiGe HBTs

DEFF Research Database (Denmark)

Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld

2013-01-01

In this paper, a passive double balanced mixer in SiGe HBT technology is presented. Due to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode connected HBTs. The mixer is optimized for use in doppler radars and is highly linear with 1 dB compressio...
Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching.

Science.gov (United States)

Irrera, Alessia; Artoni, Pietro; Fioravanti, Valeria; Franzò, Giorgia; Fazio, Barbara; Musumeci, Paolo; Boninelli, Simona; Impellizzeri, Giuliana; Terrasi, Antonio; Priolo, Francesco; Iacona, Fabio

2014-02-12

Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm-2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 μm. NW diameter is compatible with the occurrence of quantum confinement effects and, accordingly, we observed light emission assignable to the presence of Si and Ge nanostructures. We performed a detailed study of the photoluminescence properties of the NWs, with particular attention to the excitation and de-excitation properties as a function of the temperature and of the excitation photon flux, evaluating the excitation cross section and investigating the presence of non-radiative phenomena. PACS: 61.46.Km; 78.55.-m; 78.67.Lt.
Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

Science.gov (United States)

Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Ferlet-Cavrois, Veronique; Baggio, Jacques; Duhamel, Olivier; Moen, Kurt A.; Phillips, Stanley D.; Diestelhorst, Ryan M.;

2009-01-01

SiGe HBT heavy ion-induced current transients are measured using Sandia National Laboratories microbeam and high- and low-energy broadbeam sources at the Grand Accelerateur National d'Ions Lourds and the University of Jyvaskyla. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.

Step-driven surface segregation and ordering during Si-Ge MBE growth

International Nuclear Information System (INIS)

Jesson, D.E.; Pennycook, S.J.; Baribeau, J.M.; Houghton, D.C.

1992-06-01

An important role of type S B step edges in determining the as-grown microstructure of Si-Ge superlattices and alloys is implicated from direct Z-contrast images of as-grown structures. A variety of different ordered phase variants can arise at each Si on Ge interface as a result of vertical segregation during superlattice growth. A new monoclinic-ordered structure is predicted to arise as a result of lateral segregation during alloy growth
Observation of spin-selective tunneling in SiGe nanocrystals.

Science.gov (United States)

Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

2011-12-09

Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.
Si, Ge and SiGe wires for sensor application

International Nuclear Information System (INIS)

Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

2011-01-01

Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)
Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

Directory of Open Access Journals (Sweden)

Wei Yuan Wong

2017-01-01

Full Text Available Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.
Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

Science.gov (United States)

Yuan, Wong Wei; Natashah Norizan, Mohd; Salwani Mohamad, Ili; Jamalullail, Nurnaeimah; Hidayah Saad, Nor

2017-11-01

Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.
The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

Science.gov (United States)

Zaumseil, P; Kozlowski, G; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

2012-09-07

We study the growth and relaxation processes of Ge nano-clusters selectively grown by chemical vapor deposition on free-standing 90 nm wide Si(001) nano-pillars with a thin Si(0.23)Ge(0.77) buffer layer. We found that the dome-shaped SiGe layer with a height of about 28 nm as well as the Ge dot deposited on top of it partially relaxes, mainly by elastic lattice bending. The Si nano-pillar shows a clear compliance behavior-an elastic response of the substrate on the growing film-with the tensile strained top part of the pillar. Additional annealing at 800 °C leads to the generation of misfit dislocation and reduces the compliance effect significantly. This example demonstrates that despite the compressive strain generated due to the surrounding SiO(2) growth mask it is possible to realize an overall tensile strain in the Si nano-pillar and following a compliant substrate effect by using a SiGe buffer layer. We further show that the SiGe buffer is able to improve the structural quality of the Ge nano-dot.
An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

DEFF Research Database (Denmark)

Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

2017-01-01

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can...
The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

International Nuclear Information System (INIS)

Brehm, M.; Grydlik, M.; Groiss, H.; Hackl, F.; Schaeffler, F.; Fromherz, T.; Bauer, G.

2011-01-01

For the prototypical SiGe/Si(001) Stranski-Krastanow (SK) growth system, the influence of intermixing caused by the deposition of a Si cap layer at temperatures T cap between 300 deg. C and 700 deg. C is studied both for the SiGe wetting layer (WL) and the SiGe islands. Systematic growth experiments were carried out with an ultrahigh resolution of down to 0.005 monolayers (ML) of deposited Ge. The properties of the samples were investigated via photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy. We studied in detail the influence of T cap in the three main coverage regions of SiGe SK growth, which are (i) the WL build-up regime, (ii) the island nucleation regime, where most of the Ge is supplied via material transfer from the WL, and (iii) the saturation regime, where the WL thickness remains initially stable. At T cap = 300 deg. C, we found that both the WL and the island are essentially preserved in composition and shape, whereas at 500 deg. C the WL becomes heavily alloyed during capping, and at 700 deg. C the islands also become alloyed. At T cap = 500 deg. C we found enhanced WL intermixing in the presence of dome-shaped islands, whereas at T cap 700 deg. C the WL properties become dominated by the dissolution of pyramid-shaped islands upon capping. At Ge coverages above ≅6 ML, we found an unexpected thickening of the WL, almost independently of T cap . This finding suggests that the density and the volume of the dome-shaped islands have an upper limit, beyond which excess Ge from the external source again becomes incorporated into the WL. Finally, we compared PL spectra with AFM-based evaluations of the integral island volumes in order to determine in a straightforward manner the average composition of the SiGe islands.
Magnetic multilayer structure

Science.gov (United States)

Herget, Philipp; O'Sullivan, Eugene J.; Romankiw, Lubomyr T.; Wang, Naigang; Webb, Bucknell C.

2016-07-05

A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

Science.gov (United States)

Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

2018-01-01

Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.
Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

Science.gov (United States)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.
Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator

International Nuclear Information System (INIS)

Kim, Tae-Hyun; Park, Jea-Gun

2013-01-01

We investigated the combined effect of the strained Si channel and hole confinement on the memory margin enhancement for a capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator (ε-Si SGOI). The memory margin for the ε-Si SGOI capacitor-less memory cell was higher than that of the memory cell fabricated on an unstrained Si-on-insulator (SOI) and increased with increasing Ge concentration of the relaxed SiGe layer; i.e. the memory margin for the ε-Si SGOI capacitor-less memory cell (138.6 µA) at a 32 at% Ge concentration was 3.3 times higher than the SOI capacitor-less memory cell (43 µA). (paper)
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD

Science.gov (United States)

Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Schubert, Markus Andreas; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd

2017-12-01

Self-ordered three-dimensional body-centered tetragonal (BCT) SiGe nanodot structures are fabricated by depositing SiGe/Si superlattice layer stacks using reduced pressure chemical vapor deposition. For high enough Ge content in the island (>30%) and deposition temperature of the Si spacer layers (T > 700 °C), we observe the formation of an ordered array with islands arranged in staggered position in adjacent layers. The in plane periodicity of the islands can be selected by a suitable choice of the annealing temperature before the Si spacer layer growth and of the SiGe dot volume, while only a weak influence of the Ge concentration is observed. Phase-field simulations are used to clarify the driving force determining the observed BCT ordering, shedding light on the competition between heteroepitaxial strain and surface-energy minimization in the presence of a non-negligible surface roughness.
Multilayer Spectral Graph Clustering via Convex Layer Aggregation: Theory and Algorithms

OpenAIRE

Chen, Pin-Yu; Hero, Alfred O.

2017-01-01

Multilayer graphs are commonly used for representing different relations between entities and handling heterogeneous data processing tasks. Non-standard multilayer graph clustering methods are needed for assigning clusters to a common multilayer node set and for combining information from each layer. This paper presents a multilayer spectral graph clustering (SGC) framework that performs convex layer aggregation. Under a multilayer signal plus noise model, we provide a phase transition analys...
Properties of laser-crystallized polycrystalline SiGe thin films

Energy Technology Data Exchange (ETDEWEB)

Weizman, Moshe

2008-06-06

In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 0SiGe films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

Multilayer Brain Networks

Science.gov (United States)

Vaiana, Michael; Muldoon, Sarah Feldt

2018-01-01

The field of neuroscience is facing an unprecedented expanse in the volume and diversity of available data. Traditionally, network models have provided key insights into the structure and function of the brain. With the advent of big data in neuroscience, both more sophisticated models capable of characterizing the increasing complexity of the data and novel methods of quantitative analysis are needed. Recently, multilayer networks, a mathematical extension of traditional networks, have gained increasing popularity in neuroscience due to their ability to capture the full information of multi-model, multi-scale, spatiotemporal data sets. Here, we review multilayer networks and their applications in neuroscience, showing how incorporating the multilayer framework into network neuroscience analysis has uncovered previously hidden features of brain networks. We specifically highlight the use of multilayer networks to model disease, structure-function relationships, network evolution, and link multi-scale data. Finally, we close with a discussion of promising new directions of multilayer network neuroscience research and propose a modified definition of multilayer networks designed to unite and clarify the use of the multilayer formalism in describing real-world systems.
SiGe HBTs Optimization for Wireless Power Amplifier Applications

Directory of Open Access Journals (Sweden)

Pierre-Marie Mans

2010-01-01

Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.
Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

Energy Technology Data Exchange (ETDEWEB)

Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2015-08-15

The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.
Influence of airborne pollen counts and length of pollen season of selected allergenic plants on the concentration of sIgE antibodies on the population of Bratislava, Slovakia

Directory of Open Access Journals (Sweden)

Jana Ščevková

2015-09-01

Full Text Available Introduction and objective. The association between airborne pollen counts or duration of pollen season and allergy symptoms is not always distinguished. The purpose of this study was to examine the correlation between pollen exposure (annual total pollen quantity and main pollen season length of selected allergenic plants in the atmosphere of Bratislava, and concentration of allergen-specific immunoglobulin E (sIgE in serum of patients with seasonal allergy during 2002–2003. Materials and methods. The concentration of pollen was monitored by a Burkard volumetric pollen trap. At the same time, 198 pollen allergic patients were testing to determine the values of sIgE antibodies against selected pollen allergens; a panel of 8 purified allergens was used. Results. The highest percentages of sensitization were detected for Poaceae and [i]Ambrosia[/i] pollen allergens. The most abundant airborne pollen types were Urticaceae, [i]Betula[/i], [i]Populus[/i], Fraxinus, Pinus and Poaceae. The length of the pollen season varied. The longest pollen season was that of the [i]Plantago[/i] – 105 days, and the shortest, [i]Corylus[/i] – 20 days. A significant correlation was found between annual total pollen quantity and median sIgE values, especially in 2002. Conclusions. A strong and significant positive correlation was observed between pollen counts, excluding [i]Betula[/i], and sIgE levels in both analysed years. The correlation was weaker and negative in the case of length of pollen season and sIgE values.
Quantum-optical input-output relations for dispersive and lossy multilayer dielectric plates

International Nuclear Information System (INIS)

Gruner, T.; Welsch, D.

1996-01-01

Using the Green-function approach to the problem of quantization of the phenomenological Maxwell theory, the propagation of quantized radiation through dispersive and absorptive multilayer dielectric plates is studied. Input-output relations are derived, with special emphasis on the determination of the quantum noise generators associated with the absorption of radiation inside the dielectric matter. The input-output relations are used to express arbitrary correlation functions of the outgoing field in terms of correlation functions of the incoming field and those of the noise generators. To illustrate the theory, photons at dielectric tunneling barriers are considered. It is shown that inclusion in the calculations of losses in the photonic band gaps may substantially change the barrier traversal times. copyright 1996 The American Physical Society
Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

Science.gov (United States)

England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.
Effect of Si/Ge ratio on resistivity and thermopower in Gd{sub 5}Si{sub x}Ge{sub 4-x} magnetocaloric compounds

Energy Technology Data Exchange (ETDEWEB)

Raj Kumar, D.M. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Manivel Raja, M., E-mail: mraja@dmrl.drdo.i [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Prabahar, K.; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Poddar, Asok; Ranganathan, R. [Saha Institute of Nuclear Physics, Kolkata 700064 (India); Suresh, K.G. [Indian Institute of Technology Bombay, Mumbai 400076 (India)

2011-07-15

The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd{sub 5}(Si,Ge){sub 4}-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of -8 {mu}V/K was obtained at the magneto-structural transition for the x=2 compound. - Research highlights: Effect of Si/Ge ratio on microstructure, magneto-structural transitions, resistivity ({rho}) and thermopower S(T) behaviour has been investigated in Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7, 2.0, 2.2 and 2.3. Microstructural studies reveal the presence of a Gd{sub 5}(Si,Ge){sub 4} -matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The resistivity behaviour has shown good correlation with the microstructural studies. A large change in thermopower of -8{mu}V/K was obtained at the magneto-structural transition for the x=2 compound. The resistivity and change in thermopower values were high for the alloys with Si/Ge ratio {<=}1 compared to that of the alloys with Si/Ge ratio >1.
Multilayer mirrors as power filters in insertion device beamlines

International Nuclear Information System (INIS)

Kortright, J.B.; DiGennaro, R.S.

1988-08-01

The power-filtering capabilities of multilayer band-pass x-ray mirrors relative to total reflection low-pass mirrors is presented. Results are based on calculations assuming proposed wiggler sources on the upcoming generation of low energy (1.5 GeV) and high energy (7.0 GeV) synchrotron radiation sources. Results show that multilayers out-perform total reflection mirrors in terms of reduction in reflected power by roughly an order of magnitude, with relatively small increases in total absorbed power and power density over total reflection mirrors, and with comparable reflected flux values. Various aspects of this potential application of multilayer x-ray optics are discussed. 13 refs., 3 figs., 1 tab
Refractive index contrast in porous silicon multilayers

Energy Technology Data Exchange (ETDEWEB)

Nava, R.; Mora, M.B. de la; Tagueena-Martinez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos (Mexico); Rio, J.A. del [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos (Mexico); Centro Morelense de Innovacion y Transferencia Tecnologica, Consejo de Ciencia y Tecnologia del Estado de Morelos (Mexico)

2009-07-15

Two of the most important properties of a porous silicon multilayer for photonic applications are flat interfaces and a relative large refractive index contrast between layers in the optical wavelength range. In this work, we studied the effect of the current density and HF electrolyte concentration on the refractive index of porous silicon. With the purpose of increasing the refractive index contrast in a multilayer, the refractive index of porous silicon produced at low current was studied in detail. The current density applied to produce the low porosity layers was limited in order to keep the electrolyte flow through the multilayer structure and to avoid deformation of layer interfaces. We found that an electrolyte composed of hydrofluoric acid, ethanol and glycerin in a ratio of 3:7:1 gives a refractive index contrast around 1.3/2.8 at 600 nm. Several multilayer structures with this refractive index contrast were fabricated, such as dielectric Bragg mirrors and microcavities. Reflectance spectra of the structures show the photonic quality of porous silicon multilayers produced under these electrochemical conditions. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Fabrication of multilayer nanowires

Energy Technology Data Exchange (ETDEWEB)

Kaur, Jasveer, E-mail: kaurjasveer89@gmail.com; Singh, Avtar; Kumar, Davinder [Department of Physics, Punjabi University Patiala, 147002, Punjab (India); Thakur, Anup; Kaur, Raminder, E-mail: raminder-k-saini@yahoo.com [Department of Basic and Applied Sciences, Punjabi University Patiala, 147002, Punjab (India)

2016-05-06

Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.
Fabrication of multilayer nanowires

International Nuclear Information System (INIS)

Kaur, Jasveer; Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

2016-01-01

Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.
Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs

Science.gov (United States)

Pellish, Jonathan A.; Reed, R. A.; McMorrow, D.; Vizkelethy, G.; Ferlet-Cavrois, V.; Baggio, J.; Duhamel, O.; Moen, K. A.; Phillips, S. D.; Diestelhorst, R. M.;

2009-01-01

IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback.

Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada

Directory of Open Access Journals (Sweden)

Rodríguez, A.

2004-04-01

Full Text Available The hydrogenation of polycrystalline SiGe layers, obtained by solid phase crystallization, by an electron ciclotron resonance hydrogen plasma and the influence of this hydrogenation process on the electrical characteristics of thin film transistors fabricated using this material as active layer have been studied. The hydrogenation processes were carried out at 150 and 250 ºC for several times, up to 11 hours. Infrared transmission spectra of these samples show only the absorption bands corresponding to Si-H bonds, indicating that hydrogen atoms are bonded mainly to silicon atoms. Ultraviolet reflectance measurements show that the surface damage caused by the plasma exposure increases as the Ge content of the film does. The transistors fabricated using polycrystalline SiGe films as active layer show a degradation phenomenon, consisting of a progressive decrease of the drain current at constant gate and drain bias. The degradation slows down as the hydrogenation time increases at constant temperature.

En este trabajo se ha caracterizado el proceso de hidrogenación en un plasma generado por resonancia ciclotrónica de electrones de capas de SiGe policristalino obtenidas mediante cristalización en fase sólida y el efecto de la hidrogenación en las características eléctricas de transistores de película delgada fabricados usando dicho material. Los procesos de hidrogenación se realizaron a 150 y 250 ºC, con duraciones de hasta 11 horas. Los espectros de transmitancia en infrarrojo muestran solamente las bandas de absorción características de los enlaces Si-H. Estas bandas indican que el hidrógeno se incorpora al material enlazándose principalmente con los átomos de silicio. Las medidas de reflectancia en el ultravioleta indican que se crea daño en la superficie de la muestra y que éste aumenta a medida que lo hace el contenido en Ge. Los transistores de película delgada con capa activa de SiGe policristalino muestran un fen
Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

Science.gov (United States)

Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

2016-03-01

Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy
Clustering network layers with the strata multilayer stochastic block model.

Science.gov (United States)

Stanley, Natalie; Shai, Saray; Taylor, Dane; Mucha, Peter J

2016-01-01

Multilayer networks are a useful data structure for simultaneously capturing multiple types of relationships between a set of nodes. In such networks, each relational definition gives rise to a layer. While each layer provides its own set of information, community structure across layers can be collectively utilized to discover and quantify underlying relational patterns between nodes. To concisely extract information from a multilayer network, we propose to identify and combine sets of layers with meaningful similarities in community structure. In this paper, we describe the "strata multilayer stochastic block model" (sMLSBM), a probabilistic model for multilayer community structure. The central extension of the model is that there exist groups of layers, called "strata", which are defined such that all layers in a given stratum have community structure described by a common stochastic block model (SBM). That is, layers in a stratum exhibit similar node-to-community assignments and SBM probability parameters. Fitting the sMLSBM to a multilayer network provides a joint clustering that yields node-to-community and layer-to-stratum assignments, which cooperatively aid one another during inference. We describe an algorithm for separating layers into their appropriate strata and an inference technique for estimating the SBM parameters for each stratum. We demonstrate our method using synthetic networks and a multilayer network inferred from data collected in the Human Microbiome Project.
Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers

NARCIS (Netherlands)

Bruce, S.P.O.; Vandamme, L.K.J.; Rydberg, A.

1999-01-01

Transimpedance amplifiers have been used for direct study of current noise in silicon germanium (SiGe) heterojunction bipolar transistors (HBT's) at different biasing conditions. This has facilitated a wider range of resistances in the measurement circuit around the transistor than is possible when
Multilayer scaffolds in orthopaedic tissue engineering.

Science.gov (United States)

Atesok, Kivanc; Doral, M Nedim; Karlsson, Jon; Egol, Kenneth A; Jazrawi, Laith M; Coelho, Paulo G; Martinez, Amaury; Matsumoto, Tomoyuki; Owens, Brett D; Ochi, Mitsuo; Hurwitz, Shepard R; Atala, Anthony; Fu, Freddie H; Lu, Helen H; Rodeo, Scott A

2016-07-01

The purpose of this study was to summarize the recent developments in the field of tissue engineering as they relate to multilayer scaffold designs in musculoskeletal regeneration. Clinical and basic research studies that highlight the current knowledge and potential future applications of the multilayer scaffolds in orthopaedic tissue engineering were evaluated and the best evidence collected. Studies were divided into three main categories based on tissue types and interfaces for which multilayer scaffolds were used to regenerate: bone, osteochondral junction and tendon-to-bone interfaces. In vitro and in vivo studies indicate that the use of stratified scaffolds composed of multiple layers with distinct compositions for regeneration of distinct tissue types within the same scaffold and anatomic location is feasible. This emerging tissue engineering approach has potential applications in regeneration of bone defects, osteochondral lesions and tendon-to-bone interfaces with successful basic research findings that encourage clinical applications. Present data supporting the advantages of the use of multilayer scaffolds as an emerging strategy in musculoskeletal tissue engineering are promising, however, still limited. Positive impacts of the use of next generation scaffolds in orthopaedic tissue engineering can be expected in terms of decreasing the invasiveness of current grafting techniques used for reconstruction of bone and osteochondral defects, and tendon-to-bone interfaces in near future.
Measure of Node Similarity in Multilayer Networks

DEFF Research Database (Denmark)

Møllgaard, Anders; Zettler, Ingo; Dammeyer, Jesper

2016-01-01

university.Our analysis is based on data obtained using smartphones equipped with customdata collection software, complemented by questionnaire-based data. The networkof social contacts is represented as a weighted multilayer network constructedfrom different channels of telecommunication as well as data...... might bepresent in one layer of the multilayer network and simultaneously be absent inthe other layers. For a variable such as gender, our measure reveals atransition from similarity between nodes connected with links of relatively lowweight to dis-similarity for the nodes connected by the strongest...
Oromucosal multilayer films for tailor-made, controlled drug delivery.

Science.gov (United States)

Lindert, Sandra; Breitkreutz, Jörg

2017-11-01

The oral mucosa has recently become increasingly important as an alternative administration route for tailor-made, controlled drug delivery. Oromucosal multilayer films, assigned to the monograph oromucosal preparations in the Ph.Eur. may be a promising dosage form to overcome the requirements related to this drug delivery site. Areas covered: We provide an overview of multilayer films as drug delivery tools, and discuss manufacturing processes and characterization methods. We focus on the suitability of characterization methods for particular requirements of multilayer films. A classification was performed covering indication areas and APIs incorporated in multilayer film systems for oromucosal use in order to provide a summary of data published in this field. Expert opinion: The shift in drug development to high molecular weight drugs will influence the field of pharmaceutical development and delivery technologies. For a high number of indication areas, such as hormonal disorders, cardiovascular diseases or local treatment of infections, the flexible layer design of oromucosal multilayer films provides a promising option for tailor-made, controlled delivery of APIs to or through defined surfaces in the oral cavity. However, there is a lack of discriminating or standardized testing methods to assess the quality of multilayer films in a reliable way.
Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Energy Technology Data Exchange (ETDEWEB)

Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

2016-04-21

We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

Writing nanopatterns with electrochemical oxidation on redox responsive organometallic multilayers by AFM

NARCIS (Netherlands)

Song, Jing; Hempenius, Mark A.; Chung, H.J.; Vancso, Gyula J.

2015-01-01

Nanoelectrochemical patterning of redox responsive organometallic poly(ferrocenylsilane) (PFS) multilayers is demonstrated by electrochemical dip pen lithography (EDPN). Local electrochemical oxidation and Joule heating of PFS multilayers from the tip are considered as relevant mechanisms related to
Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

International Nuclear Information System (INIS)

Ghandi, R.; Kolahdouz, M.; Hallstedt, J.; Wise, R.; Wejtmans, Hans; Radamson, H.H.

2008-01-01

In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si 1-x Ge x (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers
Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

Energy Technology Data Exchange (ETDEWEB)

Ghandi, R. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: ghandi@kth.se; Kolahdouz, M.; Hallstedt, J. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden); Wise, R.; Wejtmans, Hans [Texas Instrument, 13121 TI Boulevard, Dallas, Tx 75243 (United States); Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

2008-11-03

In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si{sub 1-x}Ge{sub x} (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers.
New developments in Ni/Ti multilayers

Energy Technology Data Exchange (ETDEWEB)

Anderson, I; Hoghoj, P [Institut Max von Laue - Paul Langevin (ILL), 38 - Grenoble (France)

1997-04-01

It is now 20 years since super-mirrors were first used as a neutron optical element. Since then the field of multilayer neutron-optics has matured with multilayers finding their way to application in many neutron scattering instruments. However, there is still room for progress in terms of multilayer quality, performance and application. Along with work on multilayers for neutron polarisation Ni/Ti super-mirrors have been optimised. The state-of-the-art Ni/Ti super-mirror performance and the results obtained in two neutron-optics applications of Ni/Ti multilayers are presented. (author).
LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr Calorimeter

CERN Document Server

Dressnandt, N; Rescia, S; Vernon, E

2009-01-01

We have designed and fabricated a very low noise preamplifier and shaper to replace the existing ATLAS Liquid Argon readout for use at the Large Hadron Collider upgrade (sLHC). IBM’s 8WL 130nm SiGe process was chosen for it’s radiation tolerance, low noise bipolar NPN devices, wide voltage rand and potential use in other sLHC detector subsystems. Although the requirements for the final design can not be set at this time, the prototype was designed to accommodate a 16 bit dynamic range. This was accomplished by using a single stage, low noise, wide dynamic range preamp followed by a dual range shaper. The low noise of the preamp is made possible by the low base spreading resistance of the Silicon Germanium NPN bipolar transistors. The relatively high voltage rating of the NPN transistors is exploited to allow a gain of 650V/A in the preamplifier which eases the input voltage noise requirement on the shaper. Each shaper stage is designed as a cascaded differential operational amplifier doublet with a common...
Application of Rutherford backscattering and nuclear reaction analysis techniques for investigation of thin films

International Nuclear Information System (INIS)

Kiss, A.Z.; Simon, A.; Elekes, Z.; Ditroi, F.; Meszaros, S.; Beke, D.L.; Langer, G.A.; Daroczy, L.

2002-01-01

A study of the intermixing of the elements in amorphous Si-Ge multilayers have been carried out using Rutherford backscattering Spectrometry (RBS) technique. Interdiffusion coefficient was determined by measuring the intensity of the first Ge peak (having best depth resolution) in the RBS spectrum as a function of annealing time. The oxygen content of the multilayer was measured by the resonance elastic scattering method in co-operation with Dubna. A cross comparison of multilayered films were performed between the laboratories in Debrecen, Dubna, Albany and Dhaka. An essay to determine the nitrogen content of CVD diamond by the deuteron induced gamma ray emission method has been done. (author)
A SiGe High Gain and Highly Linear F-Band Single-Balanced Subharmonic Mixer

OpenAIRE

Seyedhosseinzadeh, Neda; Nabavi, Abdolreza; Carpenter, Sona; He, Zhongxia Simon; Bao, Mingquan; Zirath, Herbert

2017-01-01

A compact, broadband, high gain, second-order active down-converter subharmonic mixer is demonstrated using a 130-nm SiGe BiCMOS technology. The mixer adopts a bottom-LO Gilbert topology, on-chip RF and LO baluns and two emitter-follower buffers to realize a high gain wideband operation in both RF and IF frequencies. The measured performance exhibits a flat conversion gain (CG) of about 11 dB from 90 to 130 GHz with an average LO power of +3 dBm and high 2LO-RF isolation better than 60 dB. Th...
High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

International Nuclear Information System (INIS)

Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

2008-01-01

This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers
LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr

CERN Document Server

Rescia, S; Newcomer, F M; Dressnandt, N

2009-01-01

We have designed and fabricated a very low noise preamplifier and shaper with a (RC)2 – CR response to replace the existing ATLAS Liquid Argon readout for use at SLHC. IBM’s 8WL 130nm SiGe process was chosen for its radiation tolerance wide voltage range and potential for use in other LHC detector subsystems. The required dynamic range of 15 bits is accomplished by utilization of a single stage, low noise, wide dynamic range preamp connected to a dual range shaper. The low noise of the preamp (~.01nA / √Hz) is achieved by utilizing the process Silicon Germanium bipolar transistors. The relatively high voltage rating of the npn transistors is exploited to allow a gain of 650V/A. With this gain the equivalent input voltage noise requirement on the shaper to about 2.2nV/ √Hz. Each shaper stage is designed as a cascaded differential op amp doublet with a common mode operating point regulated by an internal feedback loop. The shaper outputs are designed to be compatible with the 130nm CMOS ADC being develo...
A high linearity SiGe HBT LNA for GPS receiver

International Nuclear Information System (INIS)

Luo Yanbin; Shi Jian; Ma Chengyan; Gan Yebing; Qian Min

2014-01-01

A high linearity 1.575 GHz SiGe:HBT low noise amplifier (LNA) for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process. A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1.11 dB, a power gain of 18 dB, an output 1 dB compression point of +7.8 dBm and an input third-order intercept point of +1.8 dBm. The chip occupies a 500 × 560 μm 2 area and consumes 3.6 mA from a 2.85 V power supply. (semiconductor integrated circuits)
Stress-related interdiffusion in dc sputtered TiN/B endash C endash N multilayers

International Nuclear Information System (INIS)

Fayeulle, S.; Nastasi, M.

1998-01-01

The diffusion in TiN/B endash C endash N multilayers during vacuum annealing at temperatures up to 1000thinsp degree C and/or 300 keV argon irradiation is studied. Changes in composition, stress field, bilayer repeat length, and interface quality are reported. The effect of stress on diffusion is proved by performing the same annealing or the same irradiation on a multilayer with and without compressive stress. During thermal annealing, demixing or phase separation is observed. On the contrary, during irradiation, mixing occurs. Both phenomena are enhanced in the presence of the stress field. copyright 1998 American Institute of Physics
Thin SiGe virtual substrates for Ge heterostructures integration on silicon

International Nuclear Information System (INIS)

Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

2014-01-01

The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach
SiGe HBT cryogenic preamplification for higher bandwidth donor spin read-out

Science.gov (United States)

Curry, Matthew; Carr, Stephen; Ten-Eyck, Greg; Wendt, Joel; Pluym, Tammy; Lilly, Michael; Carroll, Malcolm

2014-03-01

Single-shot read-out of a donor spin can be performed using the response of a single-electron-transistor (SET). This technique can produce relatively large changes in current, on the order of 1 (nA), to distinguish between the spin states. Despite the relatively large signal, the read-out time resolution has been limited to approximately 100 (kHz) of bandwidth because of noise. Cryogenic pre-amplification has been shown to extend the response of certain detection circuits to shorter time resolution and thus higher bandwidth. We examine a SiGe HBT circuit configuration for cryogenic preamplification, which has potential advantages over commonly used HEMT configurations. Here we present 4 (K) measurements of a circuit consisting of a Silicon-SET inline with a Heterojunction-Bipolar-Transistor (HBT). We compare the measured bandwidth with and without the HBT inline and find that at higher frequencies the signal-to-noise-ratio (SNR) with the HBT inline exceeds the SNR without the HBT inline. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.
Fabrication of customizable wedged multilayer Laue lenses by adding a stress layer

International Nuclear Information System (INIS)

Niese, Sven; Krüger, Peter; Kubec, Adam; Laas, Roman; Gawlitza, Peter; Melzer, Kathleen; Braun, Stefan; Zschech, Ehrenfried

2014-01-01

Diffractive optics for hard X-rays feature superior properties in terms of resolution and efficiency, if volume diffraction effects are exploited all-over the aperture. For multilayer Laue lenses, preferably a wedged geometry is required to obtain this effect. We present an approach utilizing an additional stress layer to realize the necessary geometrical modifications where each lens can be customized to a selected photon energy independently of the given multilayer deposition. The quality of the deposition of the stress layer is evaluated using a laboratory X-ray microscope prior to its application at synchrotron radiation facilities with a special approach to measure the relative layer tilt at high spatial resolution. - Highlights: • Wedged multilayer Laue lenses were fabricated using an additional stress layer. • Each lens can be customized to any photon energy independently of the multilayer. • The relative layer tilt is measured using laboratory X-ray microscopy
High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

Energy Technology Data Exchange (ETDEWEB)

Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

2008-12-05

This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.
Wedged multilayer Laue lens

International Nuclear Information System (INIS)

Conley, Ray; Liu Chian; Qian Jun; Kewish, Cameron M.; Macrander, Albert T.; Yan Hanfei; Maser, Joerg; Kang, Hyon Chol; Stephenson, G. Brian

2008-01-01

A multilayer Laue lens (MLL) is an x-ray focusing optic fabricated from a multilayer structure consisting of thousands of layers of two different materials produced by thin-film deposition. The sequence of layer thicknesses is controlled to satisfy the Fresnel zone plate law and the multilayer is sectioned to form the optic. An improved MLL geometry can be created by growing each layer with an in-plane thickness gradient to form a wedge, so that every interface makes the correct angle with the incident beam for symmetric Bragg diffraction. The ultimate hard x-ray focusing performance of a wedged MLL has been predicted to be significantly better than that of a nonwedged MLL, giving subnanometer resolution with high efficiency. Here, we describe a method to deposit the multilayer structure needed for an ideal wedged MLL and report our initial deposition results to produce these structures
Measure of Node Similarity in Multilayer Networks

DEFF Research Database (Denmark)

Møllgaard, Anders; Zettler, Ingo; Dammeyer, Jesper

2016-01-01

The weight of links in a network is often related to the similarity of thenodes. Here, we introduce a simple tunable measure for analysing the similarityof nodes across different link weights. In particular, we use the measure toanalyze homophily in a group of 659 freshman students at a large...... university.Our analysis is based on data obtained using smartphones equipped with customdata collection software, complemented by questionnaire-based data. The networkof social contacts is represented as a weighted multilayer network constructedfrom different channels of telecommunication as well as data...... might bepresent in one layer of the multilayer network and simultaneously be absent inthe other layers. For a variable such as gender, our measure reveals atransition from similarity between nodes connected with links of relatively lowweight to dis-similarity for the nodes connected by the strongest...
Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

Science.gov (United States)

Chagarov, Evgueni A.; Kavrik, Mahmut S.; Fang, Ziwei; Tsai, Wilman; Kummel, Andrew C.

2018-06-01

Comprehensive Density-Functional Theory (DFT) Molecular Dynamics (MD) simulations were performed to investigate interfaces between a-HfO2 and SiGe or Ge semiconductors with fully-stoichiometric a-SiO2 or sub-oxide SiO interlayers. The electronic structure of the selected stacks was calculated with a HSE06 hybrid functional. Simulations were performed before and after hydrogen passivation of residual interlayer defects. For the SiGe substrate with Ge termination prior to H passivation, the stacks with a-SiO suboxide interlayer (a-HfO2/a-SiO/SiGe) demonstrate superior electronic properties and wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/SiGe). After H passivation, most of the a-HfO2/a-SiO2/SiGe defects are passivated. To investigate effect of random placement of Si and Ge atoms additional simulations with a randomized SiGe slab were performed demonstrating improvement of electronic structure. For Ge substrates, before H passivation, the stacks with a SiO suboxide interlayer (a-HfO2/a-SiO/Ge) also demonstrate wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/Ge). However, even for a-HfO2/a-SiO/Ge, the Fermi level is shifted close to the conduction band edge (CBM) consistent with Fermi level pinning. Again, after H passivation, most of the a-HfO2/a-SiO2/Ge defects are passivated. The stacks with fully coordinated a-SiO2 interlayers have much stronger deformation and irregularity in the semiconductor (SiGe or Ge) upper layers leading to multiple under-coordinated atoms which create band-edge states and decrease the band-gap prior to H passivation.
Si/Ge intermixing during Ge Stranski–Krastanov growth

Directory of Open Access Journals (Sweden)

Alain Portavoce

2014-12-01

Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.
Multilayer network decoding versatility and trust

Science.gov (United States)

Sarkar, Camellia; Yadav, Alok; Jalan, Sarika

2016-01-01

In the recent years, the multilayer networks have increasingly been realized as a more realistic framework to understand emergent physical phenomena in complex real-world systems. We analyze massive time-varying social data drawn from the largest film industry of the world under a multilayer network framework. The framework enables us to evaluate the versatility of actors, which turns out to be an intrinsic property of lead actors. Versatility in dimers suggests that working with different types of nodes are more beneficial than with similar ones. However, the triangles yield a different relation between type of co-actor and the success of lead nodes indicating the importance of higher-order motifs in understanding the properties of the underlying system. Furthermore, despite the degree-degree correlations of entire networks being neutral, multilayering picks up different values of correlation indicating positive connotations like trust, in the recent years. The analysis of weak ties of the industry uncovers nodes from a lower-degree regime being important in linking Bollywood clusters. The framework and the tools used herein may be used for unraveling the complexity of other real-world systems.

Figure correction of multilayer coated optics

Science.gov (United States)

Chapman; Henry N. , Taylor; John S.

2010-02-16

A process is provided for producing near-perfect optical surfaces, for EUV and soft-x-ray optics. The method involves polishing or otherwise figuring the multilayer coating that has been deposited on an optical substrate, in order to correct for errors in the figure of the substrate and coating. A method such as ion-beam milling is used to remove material from the multilayer coating by an amount that varies in a specified way across the substrate. The phase of the EUV light that is reflected from the multilayer will be affected by the amount of multilayer material removed, but this effect will be reduced by a factor of 1-n as compared with height variations of the substrate, where n is the average refractive index of the multilayer.
Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

International Nuclear Information System (INIS)

Moriyama, Yoshihiko; Kamimuta, Yuuichi; Ikeda, Keiji; Tezuka, Tsutomu

2012-01-01

Tensile strain of over 1% in Ge stripes sandwiched between a pair of SiGe source-drain stressors was demonstrated. The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)-like structures were fabricated on a (001)-Ge substrate having SiO 2 dummy-gate stripes with widths down to 26 nm. Recess-regions adjacent to the dummy-gate stripes were formed by an anisotropic wet etching technique. A damage-free and well-controlled anisotropic wet etching process is developed in order to avoid plasma-induced damage during a conventional Reactive-ion Etching process. The SiGe stressors were epitaxially grown on the recesses to simulate strained Ge n-channel Metal–Insulator–Semiconductor Field-Effect Transistors (MISFETs) having high electron mobility. A micro-Raman spectroscopy measurement revealed tensile strain in the narrow Ge regions which became higher for narrower regions. Tensile strain of up to 1.2% was evaluated from the measurement under an assumption of uniaxial strain configuration. These results strongly suggest that higher electron mobility than the upper limit for a Si-MOSFET is obtainable in short-channel strained Ge-nMISFETs with the embedded SiGe stressors.
Sectioning of multilayers to make a multilayer Laue lens

International Nuclear Information System (INIS)

Kang, Hyon Chol; Stephenson, G. Brian; Liu Chian; Conley, Ray; Khachatryan, Ruben; Wieczorek, Michael; Macrander, Albert T.; Yan Hanfei; Maser, Joerg; Hiller, Jon; Koritala, Rachel

2007-01-01

We report a process to fabricate multilayer Laue lenses (MLL's) by sectioning and thinning multilayer films. This method can produce a linear zone plate structure with a very large ratio of zone depth to width (e.g., >1000), orders of magnitude larger than can be attained with photolithography. Consequently, MLL's are advantageous for efficient nanofocusing of hard x rays. MLL structures prepared by the technique reported here have been tested at an x-ray energy of 19.5 keV, and a diffraction-limited performance was observed. The present article reports the fabrication techniques that were used to make the MLL's
Multilayered pigment epithelial detachment in neovascular age-related macular degeneration

DEFF Research Database (Denmark)

Rahimy, Ehsan; Freund, K Bailey; Larsen, Michael

2014-01-01

, hyperreflective bands, termed a "multilayered PED," which is often seen in conjunction with neovascular tissue adherent to the undersurface of the retinal pigment epithelium monolayer. On the basis of previous histopathologic correlations, these bands may represent a fibrous tissue complex with contractile...... properties. An associated hyporeflective space, termed a "pre-choroidal cleft," separates the fusiform complex from the underlying choroid and may be due to contraction, the exudation of fluid, or both. Many of these eyes maintain good visual acuity, presumably because the neovascular and cicatricial process...
Examination Of Si-Ge Heterostructure Nanowire Growth Using Monte Carlo Simulation

International Nuclear Information System (INIS)

Nastovjak, A. G.; Neizvestny, I. G.; Shwartz, N. L.

2011-01-01

The process of Si-Ge heterostructures formation in nanowires (NWs) grown by vapor-liquid-solid mechanism was investigated using Monte Carlo simulation. Dependences of catalyst drop composition on temperature, flux intensity and nanowire diameter were obtained. Periodical oscillations of drop composition near mean value were observed. Oscillation results from layer-by-layer growth at the drop-whisker interface and necessity of supersaturation onset to start new layer formation. It was demonstrated that it is impossible to grow atomically abrupt axial heterojunctions via classical vapor-liquid-solid mechanism due to gradual change of catalyst drop composition when switching the fluxes. This phenomenon is the main reason of heterojunction blurriness. Junction abruptness was found to be dependent on nanowhisker diameter: in adsorption-induced growth mode abruptness of heterojunction decreases with diameter and in diffusion-induced mode it increases.
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces

International Nuclear Information System (INIS)

Patella, F; Sgarlata, A; Arciprete, F; Nufris, S; Szkutnik, P D; Placidi, E; Fanfoni, M; Motta, N; Balzarotti, A

2004-01-01

We discuss the self-aggregation process of InAs and Si-Ge quantum dots (QDs) on natural and patterned GaAs(001) and Si(001) and Si(111) surfaces, with reference to our recent studies with scanning tunnelling and atomic force microscopy and current experimental and theoretical works. Various methods for obtaining naturally structured surfaces are briefly surveyed, as the patterning formed by the surface instability and by the strain in mismatched heteroepitaxy, and the latest methods of pre-patterning and growth at selected sites are discussed. Basic topics are also addressed that determine the final morphology of QDs, such as the wetting layer formation, the elastic strain field and the two-dimensional to three-dimensional phase transition
Distinct Element Method modelling of fold-related fractures in a multilayer sequence

Science.gov (United States)

Kaserer, Klemens; Schöpfer, Martin P. J.; Grasemann, Bernhard

2017-04-01

Natural fractures have a significant impact on the performance of hydrocarbon systems/reservoirs. In a multilayer sequence, both the fracture density within the individual layers and the type of fracture intersection with bedding contacts are key parameters controlling fluid pathways. In the present study the influence of layer stacking and interlayer friction on fracture density and connectivity within a folded sequence is systematically investigated using 2D Distinct Element Method modelling. Our numerical approach permits forward modelling of both fracture nucleation/propagation/arrest and (contemporaneous) frictional slip along bedding planes in a robust and mechanically sound manner. Folding of the multilayer sequence is achieved by enforcing constant curvature folding by means of a velocity boundary condition at the model base, while a constant overburden pressure is maintained at the model top. The modelling reveals that with high bedding plane friction the multilayer stack behaves mechanically as a single layer so that the neutral surface develops in centre of the sequence and fracture spacing is controlled by the total thickness of the folded sequence. In contrast, low bedding plane friction leads to decoupling of the individual layers (flexural slip folding) so that a neutral surface develops in the centre of each layer and fracture spacing is controlled by the thickness of the individual layers. The low interfacial friction models illustrate that stepping of fractures across bedding planes is a common process, which can however have two contrasting origins: The mechanical properties of the interface cause fracture stepping during fracture propagation. Originally through-going fractures are later offset by interfacial slip during folding. A combination of these two different origins may lead to (apparently) inconsistent fracture offsets across bedding planes within a flexural slip fold.
Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

Science.gov (United States)

Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

2010-10-01

Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.
A Physics-Based Engineering Methodology for Calculating Soft Error Rates of Bulk CMOS and SiGe Heterojunction Bipolar Transistor Integrated Circuits

Science.gov (United States)

Fulkerson, David E.

2010-02-01

This paper describes a new methodology for characterizing the electrical behavior and soft error rate (SER) of CMOS and SiGe HBT integrated circuits that are struck by ions. A typical engineering design problem is to calculate the SER of a critical path that commonly includes several circuits such as an input buffer, several logic gates, logic storage, clock tree circuitry, and an output buffer. Using multiple 3D TCAD simulations to solve this problem is too costly and time-consuming for general engineering use. The new and simple methodology handles the problem with ease by simple SPICE simulations. The methodology accurately predicts the measured threshold linear energy transfer (LET) of a bulk CMOS SRAM. It solves for circuit currents and voltage spikes that are close to those predicted by expensive 3D TCAD simulations. It accurately predicts the measured event cross-section vs. LET curve of an experimental SiGe HBT flip-flop. The experimental cross section vs. frequency behavior and other subtle effects are also accurately predicted.
Gas transport and separation with ceramic membranes. Part I: Multilayer diffusion and capillary condensation

NARCIS (Netherlands)

Uhlhorn, R.J.R.; Uhlhorn, R.J.R.; Keizer, Klaas; Burggraaf, Anthonie; Burggraaf, A.J.

1992-01-01

Multilayer diffusion and capillary condensation of propylene on supported γ-alumina films greatly improved the permeability and selectivity. Multilayer diffusion, occurring at relative pressures of 0.4 to 0.8 strongly increased the permeability of 6 times the Knudsen permeability, yielding
Finding overlapping communities in multilayer networks.

Science.gov (United States)

Liu, Weiyi; Suzumura, Toyotaro; Ji, Hongyu; Hu, Guangmin

2018-01-01

Finding communities in multilayer networks is a vital step in understanding the structure and dynamics of these layers, where each layer represents a particular type of relationship between nodes in the natural world. However, most community discovery methods for multilayer networks may ignore the interplay between layers or the unique topological structure in a layer. Moreover, most of them can only detect non-overlapping communities. In this paper, we propose a new community discovery method for multilayer networks, which leverages the interplay between layers and the unique topology in a layer to reveal overlapping communities. Through a comprehensive analysis of edge behaviors within and across layers, we first calculate the similarities for edges from the same layer and the cross layers. Then, by leveraging these similarities, we can construct a dendrogram for the multilayer networks that takes both the unique topological structure and the important interplay into consideration. Finally, by introducing a new community density metric for multilayer networks, we can cut the dendrogram to get the overlapping communities for these layers. By applying our method on both synthetic and real-world datasets, we demonstrate that our method has an accurate performance in discovering overlapping communities in multilayer networks.
Controlling light with plasmonic multilayers

DEFF Research Database (Denmark)

Orlov, Alexey A.; Zhukovsky, Sergei; Iorsh, Ivan V.

2014-01-01

metamaterials and describe their use for light manipulation at the nanoscale. While demonstrating the recently emphasized hallmark effect of hyperbolic dispersion, we put special emphasis to the comparison between multilayered hyperbolic metamaterials and more broadly defined plasmonic-multilayer metamaterials...
A refined model for characterizing x-ray multilayers

International Nuclear Information System (INIS)

Oren, A.L.; Henke, B.L.

1987-12-01

The ability to quickly and accurately characterize arbitrary multilayers is very valuable for not only can we use the characterizations to predict the reflectivity of a multilayer for any soft x-ray wavelength, we also can generalize the results to apply to other multilayers of the same type. In addition, we can use the characterizations as a means of evaluating various sputtering environments and refining sputtering techniques to obtain better multilayers. In this report we have obtained improved characterizations for sample molybdenum-silicon and vanadium-silicon multilayers. However, we only examined five crystals overall, so the conclusions that we could draw about the structure of general multilayers is limited. Research involving many multilayers manufactured under the same sputtering conditions is clearly in order. In order to best understand multilayer structures it may be necessary to further refine our model, e.g., adopting a Gaussian form for the interface regions. With such improvements we can expect even better agreement with experimental values and continued concurrence with other characterization techniques. 18 refs., 30 figs., 7 tabs
Multi-Layer E-Textile Circuits

Science.gov (United States)

Dunne, Lucy E.; Bibeau, Kaila; Mulligan, Lucie; Frith, Ashton; Simon, Cory

2012-01-01

Stitched e-textile circuits facilitate wearable, flexible, comfortable wearable technology. However, while stitched methods of e-textile circuits are common, multi-layer circuit creation remains a challenge. Here, we present methods of stitched multi-layer circuit creation using accessible tools and techniques.
Base Metal Co-Fired Multilayer Piezoelectrics

Directory of Open Access Journals (Sweden)

Lisheng Gao

2016-03-01

Full Text Available Piezoelectrics have been widely used in different kinds of applications, from the automobile industry to consumer electronics. The novel multilayer piezoelectrics, which are inspired by multilayer ceramic capacitors, not only minimize the size of the functional parts, but also maximize energy efficiency. Development of multilayer piezoelectric devices is at a significant crossroads on the way to achieving low costs, high efficiency, and excellent reliability. Concerning the costs of manufacturing multilayer piezoelectrics, the trend is to replace the costly noble metal internal electrodes with base metal materials. This paper discusses the materials development of metal co-firing and the progress of integrating current base metal chemistries. There are some significant considerations in metal co-firing multilayer piezoelectrics: retaining stoichiometry with volatile Pb and alkaline elements in ceramics, the selection of appropriate sintering agents to lower the sintering temperature with minimum impact on piezoelectric performance, and designing effective binder formulation for low pO2 burnout to prevent oxidation of Ni and Cu base metal.
Multilayer Stochastic Block Models Reveal the Multilayer Structure of Complex Networks

Directory of Open Access Journals (Sweden)

Toni Vallès-Català

2016-03-01

Full Text Available In complex systems, the network of interactions we observe between systems components is the aggregate of the interactions that occur through different mechanisms or layers. Recent studies reveal that the existence of multiple interaction layers can have a dramatic impact in the dynamical processes occurring on these systems. However, these studies assume that the interactions between systems components in each one of the layers are known, while typically for real-world systems we do not have that information. Here, we address the issue of uncovering the different interaction layers from aggregate data by introducing multilayer stochastic block models (SBMs, a generalization of single-layer SBMs that considers different mechanisms of layer aggregation. First, we find the complete probabilistic solution to the problem of finding the optimal multilayer SBM for a given aggregate-observed network. Because this solution is computationally intractable, we propose an approximation that enables us to verify that multilayer SBMs are more predictive of network structure in real-world complex systems.
Characterization of multilayer nitride coatings by electron microscopy and modulus mapping

International Nuclear Information System (INIS)

Pemmasani, Sai Pramod; Rajulapati, Koteswararao V.; Ramakrishna, M.; Valleti, Krishna; Gundakaram, Ravi C.; Joshi, Shrikant V.

2013-01-01

This paper discusses multi-scale characterization of physical vapour deposited multilayer nitride coatings using a combination of electron microscopy and modulus mapping. Multilayer coatings with a triple layer structure based on TiAlN and nanocomposite nitrides with a nano-multilayered architecture were deposited by Cathodic arc deposition and detailed microstructural studies were carried out employing Energy Dispersive Spectroscopy, Electron Backscattered Diffraction, Focused Ion Beam and Cross sectional Transmission Electron Microscopy in order to identify the different phases and to study microstructural features of the various layers formed as a result of the deposition process. Modulus mapping was also performed to study the effect of varying composition on the moduli of the nano-multilayers within the triple layer coating by using a Scanning Probe Microscopy based technique. To the best of our knowledge, this is the first attempt on modulus mapping of cathodic arc deposited nitride multilayer coatings. This work demonstrates the application of Scanning Probe Microscopy based modulus mapping and electron microscopy for the study of coating properties and their relation to composition and microstructure. - Highlights: • Microstructure of a triple layer nitride coating studied at multiple length scales. • Phases identified by EDS, EBSD and SAED (TEM). • Nanolayered, nanocomposite structure of the coating studied using FIB and TEM. • Modulus mapping identified moduli variation even in a nani-multilayer architecture
High proton conductivity in the molecular interlayer of a polymer nanosheet multilayer film.

Science.gov (United States)

Sato, Takuma; Hayasaka, Yuta; Mitsuishi, Masaya; Miyashita, Tokuji; Nagano, Shusaku; Matsui, Jun

2015-05-12

High proton conductivity was achieved in a polymer multilayer film with a well-defined two-dimensional lamella structure. The multilayer film was prepared by deposition of poly(N-dodecylacryamide-co-acrylic acid) (p(DDA/AA)) monolayers onto a solid substrate using the Langmuir-Blodgett technique. Grazing-angle incidence X-ray diffraction measurement of a 30-layer film of p(DDA/AA) showed strong diffraction peaks in the out-of-plane direction at 2θ = 2.26° and 4.50°, revealing that the multilayer film had a highly uniform layered structure with a monolayer thickness of 2.0 nm. The proton conductivity of the p(DDA/AA) multilayer film parallel to the layer plane direction was 0.051 S/cm at 60 °C and 98% relative humidity with a low activation energy of 0.35 eV, which is comparable to perfluorosulfonic acid membranes. The high conductivity and low activation energy resulted from the formation of uniform two-dimensional proton-conductive nanochannels in the hydrophilic regions of the multilayer film. The proton conductivity of the multilayer film perpendicular to the layer plane was determined to be 2.1 × 10(-13) S/cm. Therefore, the multilayer film showed large anisotropic conductivity with an anisotropic ratio of 2.4 × 10(11).
Multilayer Nanoporous Graphene Membranes for Water Desalination.

Science.gov (United States)

Cohen-Tanugi, David; Lin, Li-Chiang; Grossman, Jeffrey C

2016-02-10

While single-layer nanoporous graphene (NPG) has shown promise as a reverse osmosis (RO) desalination membrane, multilayer graphene membranes can be synthesized more economically than the single-layer material. In this work, we build upon the knowledge gained to date toward single-layer graphene to explore how multilayer NPG might serve as a RO membrane in water desalination using classical molecular dynamic simulations. We show that, while multilayer NPG exhibits similarly promising desalination properties to single-layer membranes, their separation performance can be designed by manipulating various configurational variables in the multilayer case. This work establishes an atomic-level understanding of the effects of additional NPG layers, layer separation, and pore alignment on desalination performance, providing useful guidelines for the design of multilayer NPG membranes.
Mechanical properties of highly textured Cu/Ni multilayers

International Nuclear Information System (INIS)

Liu, Y.; Bufford, D.; Wang, H.; Sun, C.; Zhang, X.

2011-01-01

We report on the synthesis of highly (1 1 1) and (1 0 0) textured Cu/Ni multilayers with individual layer thicknesses, h, varying from 1 to 200 nm. When, h, decreases to 5 nm or less, X-ray diffraction spectra show epitaxial growth of Cu/Ni multilayers. High resolution transmission electron microscopy studies show the coexistence of nanotwins and coherent layer interfaces in highly (1 1 1) textured Cu/Ni multilayers with smaller h. Hardnesses of multilayer films increase with decreasing h, approach a maximum at h of a few nanometers, and show softening thereafter at smaller h. The influence of layer interfaces as well as twin interfaces on strengthening mechanisms of multilayers and the formation of twins in Ni in multilayers are discussed.

Extended asymmetric-cut multilayer X-ray gratings.

Science.gov (United States)

Prasciolu, Mauro; Haase, Anton; Scholze, Frank; Chapman, Henry N; Bajt, Saša

2015-06-15

The fabrication and characterization of a large-area high-dispersion blazed grating for soft X-rays based on an asymmetric-cut multilayer structure is reported. An asymmetric-cut multilayer structure acts as a perfect blazed grating of high efficiency that exhibits a single diffracted order, as described by dynamical diffraction throughout the depth of the layered structure. The maximum number of grating periods created by cutting a multilayer deposited on a flat substrate is equal to the number of layers deposited, which limits the size of the grating. The size limitation was overcome by depositing the multilayer onto a substrate which itself is a coarse blazed grating and then polish it flat to reveal the uniformly spaced layers of the multilayer. The number of deposited layers required is such that the multilayer thickness exceeds the step height of the substrate structure. The method is demonstrated by fabricating a 27,060 line pairs per mm blazed grating (36.95 nm period) that is repeated every 3,200 periods by the 120-μm period substrate structure. This preparation technique also relaxes the requirements on stress control and interface roughness of the multilayer film. The dispersion and efficiency of the grating is demonstrated for soft X-rays of 13.2 nm wavelength.
Soft X-ray multilayers and filters

CERN Document Server

Wang Zhan Shan; Tang Wei Xing; Qin Shuji; Zhou Bing; Chen Ling Ya

2002-01-01

The periodic and non-periodic multilayers were designed by using a random number to change each layer and a suitable merit function. Ion beam sputtering and magnetron sputtering were used to fabricate various multilayers and beam splitters in soft X-ray range. The characterization of multilayers by small angle X-ray diffraction, Auger electron spectroscopy, Rutherford back scattering spectroscopy and reflectivity illustrated the multilayers had good structures and smooth interlayers. The reflectivity and transmission of a beam splitter is about 5%. The fabrication and transmission properties of Ag, Zr were studied. The Rutherford back scattering spectroscopy and auger electron spectroscopy were used to investigate the contents and distributions of impurities and influence on qualities of filters. The attenuation coefficients were corrected by the data obtained by measurements
Influence of plasticity mismatch and porosity on mechanical behavior of nanoscale Ag/W multilayers

International Nuclear Information System (INIS)

Wen, S.P.; Zong, R.L.; Zeng, F.; Gao, Y.; Pan, F.

2007-01-01

Ag/W multilayers with periodicity ranging from 15 to 200 nm were deposited by direct current magnetron sputtering. The microstructure, hardness and elastic modulus were investigated by X-ray diffraction, Rutherford backscattering, X-ray fluorescence, scanning electron microscopy and nanoindentation. The results show that multilayers with periodicity less than 50 nm have columnar porous structure, which leads to low modulus and brittle fracture. Multilayers with periodicity larger than 50 nm have continuous laminated structure, and they are relatively ductile. All the multilayers have abnormal low hardness far less than a rule of mixture value, which has been attributed to porous structure and the deformation localization due to the plasticity mismatch between Ag and W
Influence of Fe underlayers on stress evolution of Ti in Ti/Fe multilayers

Energy Technology Data Exchange (ETDEWEB)

Wan, Li; Thompson, Gregory, E-mail: gthompson@eng.ua.edu [Department of Metallurgical Engineering, The University of Alabama, Tuscaloosa, Alabama 35487-0202 (United States)

2016-11-15

A series of 40–2 nm bilayer spacing Ti/Fe multilayers were sputter-deposited. As the length scale of individual Ti layers equaled to 2 nm, Ti phase transforms from a hexagonal close packed (hcp)-to-body centered cubic (bcc) crystal structures for equal layer thicknesses in Ti/Fe multilayers. Further equal reductions in bilayer spacing to less than 1 nm resulted in an additional transformation from a crystalline to amorphous structure. Atom probe tomography reveals significant intermixing between layers which contributes to the observed phase transformations. Real-time, intrinsic growth stress measurements were also performed to relate the adatom mobility to these phase transformations. For the hcp Ti/bcc Fe multilayers of equivalent volume fractions, the multilayers undergo an overall tensile stress state to a compressive stress state with decreasing bilayer thickness for the multilayers. When the above phase transformations occurred, a modest reduction in the overall compressive stress of the multilayer was noted. Depending on the Fe thickness, the Ti growth was observed to be a tensile to compressive growth change to a purely compressive growth for thinner bilayer spacing. Fe retained a tensile growth stress regardless of the bilayer spacing studied.
Magnetoresistive multilayers deposited on the AAO membranes

International Nuclear Information System (INIS)

Malkinski, Leszek M.; Chalastaras, Athanasios; Vovk, Andriy; Jung, Jin-Seung; Kim, Eun-Mee; Jun, Jong-Ho; Ventrice, Carl A.

2005-01-01

Silicon and GaAs wafers are the most commonly used substrates for deposition of giant magnetoresistive (GMR) multilayers. We explored a new type of a substrate, prepared electrochemically by anodization of aluminum sheets, for deposition of GMR multilayers. The surface of this AAO substrate consists of nanosized hemispheres organized in a regular hexagonal array. The current applied along the substrate surface intersects many magnetic layers in the multilayered structure, which results in enhancement of giant magnetoresistance effect. The GMR effect in uncoupled Co/Cu multilayers was significantly larger than the magnetoresistance of similar structures deposited on Si
Heat stability evaluations of Co/SiO2 multilayers

International Nuclear Information System (INIS)

Ishino, Masahiko; Koike, Masato; Kanehira, Mika; Satou, Futami; Terauchi, Masami; Sano, Kazuo

2008-01-01

The heat stability of Co/SiO 2 multilayers was evaluated. Co/SiO 2 multilayer samples were deposited on Si substrate by means of an ion beam sputtering method, and annealed at temperatures from 100degC to 600degC in a vacuum furnace. For the structural and optical evaluations, small angle x-ray diffraction (XRD) measurements, soft x-ray reflectivity measurements, and transmission electron microscopy (TEM) observations were carried out. As the results, the Co/SiO 2 multilayer samples annealed up to 400degC maintained the initial multilayer structures, and kept almost the same soft x-ray reflectivities as that of the as-deposited Co/SiO 2 multilayer sample. A deterioration of the multilayer structure caused by the growth of Co grains was found on the Co/SiO 2 multilayer samples annealed over 500degC, and the soft x-ray reflectivity dropped in accordance with the deterioration of the multilayer structure. (author)
Numerical simulation and experiment on multilayer stagger-split die.

Science.gov (United States)

Liu, Zhiwei; Li, Mingzhe; Han, Qigang; Yang, Yunfei; Wang, Bolong; Sui, Zhou

2013-05-01

A novel ultra-high pressure device, multilayer stagger-split die, has been constructed based on the principle of "dividing dies before cracking." Multilayer stagger-split die includes an encircling ring and multilayer assemblages, and the mating surfaces of the multilayer assemblages are mutually staggered between adjacent layers. In this paper, we investigated the stressing features of this structure through finite element techniques, and the results were compared with those of the belt type die and single split die. The contrast experiments were also carried out to test the bearing pressure performance of multilayer stagger-split die. It is concluded that the stress distributions are reasonable and the materials are utilized effectively for multilayer stagger-split die. And experiments indicate that the multilayer stagger-split die can bear the greatest pressure.
Thermal conductivity of nanocrystalline SiGe alloys using molecular dynamics simulations

Science.gov (United States)

Abs da Cruz, Carolina; Katcho, Nebil A.; Mingo, Natalio; Veiga, Roberto G. A.

2013-10-01

We have studied the effect of nanocrystalline microstructure on the thermal conductivity of SiGe alloys using molecular dynamics simulations. Nanograins are modeled using both the coincidence site lattice and the Voronoi tessellation methods, and the thermal conductivity is computed using the Green-Kubo formalism. We analyze the dependence of the thermal conductivity with temperature, grain size L, and misorientation angle. We find a power dependence of L1/4 of the thermal conductivity with the grain size, instead of the linear dependence shown by non-alloyed nanograined systems. This dependence can be derived analytically underlines the important role that disorder scattering plays even when the grains are of the order of a few nm. This is in contrast to non-alloyed systems, where phonon transport is governed mainly by the boundary scattering. The temperature dependence is weak, in agreement with experimental measurements. The effect of angle misorientation is also small, which stresses the main role played by the disorder scattering.
Anisotropy of heat conduction in Mo/Si multilayers

International Nuclear Information System (INIS)

Medvedev, V. V.; Yakshin, A. E.; Kruijs, R. W. E. van de; Bijkerk, F.; Yang, J.; Schmidt, A. J.; Zoethout, E.

2015-01-01

This paper reports on the studies of anisotropic heat conduction phenomena in Mo/Si multilayers with individual layer thicknesses selected to be smaller than the mean free path of heat carriers. We applied the frequency-domain thermoreflectance technique to characterize the thermal conductivity tensor. While the mechanisms of the cross-plane heat conduction were studied in detail previously, here we focus on the in-plane heat conduction. To analyze the relative contribution of electron transport to the in-plane heat conduction, we applied sheet-resistance measurements. Results of Mo/Si multilayers with variable thickness of the Mo layers indicate that the net in-plane thermal conductivity depends on the microstructure of the Mo layers
$^{31}$Si Self-Diffusion in Si-Ge Alloys and Si-(B-)C-N Ceramics and Diffusion Studies for Al and Si Beam Developments

CERN Multimedia

Nylandsted larsen, A; Voss, T L; Strohm, A

2002-01-01

An invaluable method for studying diffusion in solids is the radiotracer technique. However, its applicability had been restricted to radiotracer atoms with half-lives $t_{1/2}$ of about 1~d or longer. Within the framework of IS372 a facility was developed in which short-lived radiotracer atoms ( 5min $\\scriptstyle{\\lesssim}$ $t_{1/2}\\scriptstyle{\\lesssim}$1 d ) can be used. For the implantation of the short-lived tracers the facility is flanged to the ISOLDE beamline, and all post-implantation steps required in the radiotracer technique are done in situ.\\\\ After successful application of this novel technique in diffusion studies of $^{11}$C ($t_{1/2}$ = 20.3 min), this experiment aims at performing self-diffusion studies of $^{31}$Si ($t_{1/2}$ = 2.6~h) in Si--Ge alloys and in amorphous Si--(B--)C--N ceramics.\\\\ Our motivation for measuring diffusion in Si--Ge alloys is their recent technological renaissance as well as the purpose to test the prediction that in these alloys the self-diffusion mechanism chang...
Photon wavelength dependent valley photocurrent in multilayer MoS2

Science.gov (United States)

Guan, Hongming; Tang, Ning; Xu, Xiaolong; Shang, LiangLiang; Huang, Wei; Fu, Lei; Fang, Xianfa; Yu, Jiachen; Zhang, Caifeng; Zhang, Xiaoyue; Dai, Lun; Chen, Yonghai; Ge, Weikun; Shen, Bo

2017-12-01

The degree of freedom (DOF) of the K (K') valley in transition-metal dichalcogenides, especially molybdenum disulfide (MoS2), offers an opportunity for next-generation valleytronics devices. In this work, the K (K') valley DOF of multilayer MoS2 is studied by means of the photon wavelength dependent circular photogalvanic effect (CPGE) at room temperature upon a strong external out-of-plane electric field induced by an ionic liquid (IL) gate, which breaks the spatial-inversion symmetry. It is demonstrated that only on resonant excitations in the K (K') valley can the valley-related CPGE signals in multilayer MoS2 with an IL gate be detected, indicating that the valley contrast is indeed regenerated between the K and K' valleys when the electric field is applied. As expected, it can also be seen that the K (K') valley DOF in multilayer MoS2 can be modulated by the external electric field. The observation of photon wavelength dependent valley photocurrent in multilayer MoS2, with the help of better Ohmic contacts, may pave a way for optoelectronic applications of valleytronics in the future.
[The role of BCP in electroluminescence of multilayer organic light-emitting devices].

Science.gov (United States)

Deng, Zhao-Ru; Yang, Sheng-Yi; Lou, Zhi-Dong; Meng, Ling-Chuan

2009-03-01

As a hole-blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is usually used in blue and white light electroluminescent devices. The ability of blocking holes of BCP layer depends on its thickness, and basically holes can tunnel through thin BCP layer. In order to know the role of BCP layer in electroluminescence (EL) of multilayer organic light-emitting diodes (OLEDs), in the present paper, the authors designed a multilayer OLED ITO/NPB/BCP/Alq3 : DCJTB/Alq3/Al and investigated the influence of thickness of BCP on the EL spectra of multilayer OLEDs at different applied voltages. The experimental data show that thin BCP layer can block holes partially and tune the energy transfer between different emissive layers, and in this way, it is easy to obtain white emission, but its EL spectra will change with the applied voltages. The EL spectra of multilayer device will remain relatively stable when BCP layer is thick enough, and the holes can hardly tunnel through when the thickness of BCP layer is more than 15 nm. Furthermore, the stability of EL spectra of the multilayer OLED at different applied voltages was discussed.
EUV multilayer mirrors with enhanced stability

Science.gov (United States)

Benoit, Nicolas; Yulin, Sergiy; Feigl, Torsten; Kaiser, Norbert

2006-08-01

The application of multilayer optics in EUV lithography requires not only the highest possible normal-incidence reflectivity but also a long-term thermal and radiation stability at operating temperatures. This requirement is most important in the case of the collector mirror of the illumination system close to the EUV source where a short-time decrease in reflectivity is most likely. Mo/Si multilayer mirrors, designed for high normal reflectivity at the wavelength of 13.5 nm and deposited by dc magnetron sputtering, were directly exposed to EUV radiation without mitigation system. They presented a loss of reflectivity of more than 18% after only 8 hours of irradiation by a Xe-discharge source. Another problem of Mo/Si multilayers is the instability of reflectivity and peak wavelength under high heat load. It becomes especially critical at temperatures above 200°C, where interdiffusion between the molybdenum and the silicon layers is observed. The development of high-temperature multilayers was focused on two alternative Si-based systems: MoSi II/Si and interface engineered Mo/C/Si/C multilayer mirrors. The multilayer designs as well as the deposition parameters of all systems were optimized in terms of high peak reflectivity (>= 60 %) at a wavelength of 13.5 nm and high thermal stability. Small thermally induced changes of the MoSi II/Si multilayer properties were found but they were independent of the annealing time at all temperatures examined. A wavelength shift of -1.7% and a reflectivity drop of 1.0% have been found after annealing at 500°C for 100 hours. The total degradation of optical properties above 650°C can be explained by a recrystallization process of MoSi II layers.
Magnetic surfaces, thin films, and multilayers

International Nuclear Information System (INIS)

Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

1992-01-01

This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest
Compositionally Graded Multilayer Ceramic Capacitors.

Science.gov (United States)

Song, Hyun-Cheol; Zhou, Jie E; Maurya, Deepam; Yan, Yongke; Wang, Yu U; Priya, Shashank

2017-09-27

Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. Here, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (filters and power converters.
Resonant Raman spectroscopy of PAH-Os self-assembled multilayers

International Nuclear Information System (INIS)

Tognalli, N.; Fainstein, A.; Bonazzola, C.; Calvo, E.

2004-01-01

We present a resonant Raman scattering study of (PAH-Os/PVS) n and (PAH-Os/GOx) m self-assembled multilayers (n=1-11 and m=1-3). These Os polymer multilayers can be used in electrodes as efficient molecular wires for biomolecular recognition. The Raman intensity dependence on the number of self-assembly cycles provides information on the deposition process. The spectra are identical to that observed for PAH-Os in aqueous solution, indicating that the PAH-Os metal complex structure is conserved in the multilayers. We observe at ∼500 nm incoming and outgoing Raman resonances of osmium and bipyridine vibrational modes. These resonances are associated to the metal-to-ligand charge transfer (MLCT) transition. We study the evolution of these Raman modes as a function of the Os oxidation state during in situ electrochemistry. During the oxidation process, Os(II)→Os(III), the Raman resonance related to the MLCT disappears and the bipyridine related modes harden by ∼10 cm-1. These results are correlated with optical transmission measurements which show the disappearance of the visible region absorption when the Os complex is oxidized. We also find partial quenching of the Raman mode intensity after in situ voltamperometric cycles which demonstrates the existence of photo-electro-chemical processes
Nondestructive diagnosis of multilayer electronic plates

International Nuclear Information System (INIS)

Matvienko, A.N.; Savin, D.O.; Yas'ko, A.V.

1992-01-01

Methods of non-destructive tomographic investigation into multilayer printed plates using x radiation are described. Mathematic problem setting is given, experimental facility and methods for source data ecquisition are described. A special attention is paid to the consideration of the main factors differing the actual problem setting from the idealized one. Methods for accounting and correction of these factors are described. The efficiency of the approach proposed is demonstrated using the actual problems of reducing separate layers of multilayer printed plate metallization. The method developed is useful when exersizing control over multilayer printed plate production
Porous germanium multilayers

Energy Technology Data Exchange (ETDEWEB)

Garralaga Rojas, Enrique; Hensen, Jan; Brendel, Rolf [Institut fuer Solarenergieforschung Hameln (ISFH), Emmerthal (Germany); Carstensen, Juergen; Foell, Helmut [Chair for General Materials Science, Faculty of Engineering, Christian-Albrechts-University of Kiel (Germany)

2011-06-15

We present the reproducible fabrication of porous germanium (PGe) single- and multilayers. Mesoporous layers form on heavily doped 4'' p-type Ge wafers by electrochemical etching in highly concentrated HF-based electrolytes with concentrations in a range of 30-50 wt.%. Direct PGe formation is accompanied by a constant dissolution of the already-formed porous layer at the electrolyte/PGe interface, hence yielding a thinner substrate after etching. This effect inhibits multilayer formation as the starting layer is etched while forming the second layer. We avoid dissolution of the porous layer by alternating the etching bias from anodic to cathodic. PGe formation occurs during anodic etching whereas the cathodic step passivates pore walls with H-atoms and avoids electropolishing. The passivation lasts a limited time depending on the etching current density and electrolyte concentration, necessitating a repetition of the cathodic step at suitable intervals. With optimized alternating bias mesoporous multilayer production is possible. We control the porosity of each single layer by varying the etching current density and the electrolyte (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Transport, mechanical and global migration data of multilayer copolyamide nanocomposite films with different layouts.

Science.gov (United States)

Scarfato, P; Garofalo, E; Di Maio, L; Incarnato, L

2017-06-01

Transport, mechanical and global migration data concern multilayer food packaging films with different layouts, all incorporating a layered silicate/polyamide nanocomposite as oxygen barrier layer, and a low-density polyethylene (LDPE) as moisture resistant layer in direct contact with food. The data are related to "Tuning of co-extrusion processing conditions and film layout to optimize the performances of PA/PE multilayer nanocomposite films for food packaging" by Garofalo et al. (2017) [1]. Nanocomposite multilayer films, with different relative layer thicknesses and clay types, were produced using a laboratory scale co-extrusion blown-film equipment and were analyzed in terms of transport to oxygen and water vapor, mechanical properties and overall migration. The results have shown that all the multilayer hybrid films, based on the copolyamide layer filled with Cloisite 30B, displayed the most significant oxygen barrier improvements and the best mechanical properties compared to the unfilled films. No significant alteration of the overall migration values was observed, as expectable [2], [3], [4]. The performance improvement was more relevant in the case of the film with the thinner nanocomposite layer.
Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors

International Nuclear Information System (INIS)

Banerjee, G.; Niu, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Ahlgren, D.C.

1999-01-01

Low dose rate (LDR) cobalt-60 (0.1 rad(Si)/s) gamma irradiated Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) were studied. Comparisons were made with devices irradiated with 300 rad(Si)/s gamma radiation to verify if LDR radiation is a serious radiation hardness assurance (RHA) issue. Almost no LDR degradation was observed in this technology up to 50 krad(Si). The assumption of the presence of two competing mechanisms is justified by experimental results. At low total dose (le20 krad), an anomalous base current decrease was observed which is attributed to self-annealing of deep-level traps to shallower levels. An increase in base current at larger total doses is attributed to radiation induced generation-recombination (G/R) center generation. Experiments on gate-assisted lateral PNP transistors and 2D numerical simulations using MEDICI were used to confirm these assertions

Micromachined single-level nonplanar polycrystalline SiGe thermal microemitters for infrared dynamic scene projection

Science.gov (United States)

Malyutenko, V. K.; Malyutenko, O. Yu.; Leonov, V.; Van Hoof, C.

2009-05-01

The technology for self-supported membraneless polycrystalline SiGe thermal microemitters, their design, and performance are presented. The 128-element arrays with a fill factor of 88% and a 2.5-μm-thick resonant cavity have been grown by low-pressure chemical vapor deposition and fabricated using surface micromachining technology. The 200-nm-thick 60×60 μm2 emitting pixels enforced with a U-shape profile pattern demonstrate a thermal time constant of 2-7 ms and an apparent temperature of 700 K in the 3-5 and 8-12 μm atmospheric transparency windows. The application of the devices to the infrared dynamic scene simulation and their benefit over conventional planar membrane-supported emitters are discussed.
75 FR 79019 - Multilayered Wood Flooring From China

Science.gov (United States)

2010-12-17

...)] Multilayered Wood Flooring From China Determinations On the basis of the record \\1\\ developed in the subject... imports from China of multilayered wood flooring, provided for in subheadings 4409.10, 4409.29, 4412.31... multilayered wood flooring. The following companies are members of the CAHP: Anderson Hardwood Floors, LLC...
Wolter type I x-ray focusing mirror using multilayer coatings

International Nuclear Information System (INIS)

Chon, Kwon Su; Namba, Yoshiharu; Yoon, Kwon-Ha

2006-01-01

A multilayer coating is a useful addition to a mirror in the x-ray region and has been applied to normal incidence mirrors used with soft x rays. When a multilayer coating is used on grazing incidence optics, higher performance can be achieved than without it.Cr/Sc multilayers coated on a Wolter type I mirror substrate for a soft x-ray microscope are considered. The reflectivity and effective solid angle are calculated for Wolter type I mirrors with uniform and laterally graded multilayer coatings. The laterally graded multilayer mirror showed superior x-ray performance, and the multilayer tolerances were relaxed. This multilayer mirror could be especially useful in the soft x-ray microscope intended for biological applications
Irradiated multilayer film for primal meat packaging

International Nuclear Information System (INIS)

Lustig, S.; Schuetz, J.M.; Vicik, S.J.

1987-01-01

This patent deals with a heat-shrinkable, multilayer film suitable for use in fabricating bags for packaging primal and sub-primal meat cuts and processed meats. The multilayer film has a first outer layer of an ethylene-vinyl acetate copolymer, a core layer of a barrier film comprising vinylidene chloride-methyl acrylate copolymer, and a second outer layer of an ethylene-vinyl acetate copolymer. The multilayer film is preferably made by co-extrusion of the layers, and then it is biaxially stretched. After biaxial stretching, the multilayer film is irradiated to a dosage level of between 1 megarad and 5 megarads and heat-sealed in the form of a bag. The bag has improved storage stability characteristics
Spectral tailoring of nanoscale EUV and soft x-ray multilayer optics

Science.gov (United States)

Huang, Qiushi; Medvedev, Viacheslav; van de Kruijs, Robbert; Yakshin, Andrey; Louis, Eric; Bijkerk, Fred

2017-03-01

Extreme ultraviolet and soft X-ray (XUV) multilayer optics have experienced significant development over the past few years, particularly on controlling the spectral characteristics of light for advanced applications like EUV photolithography, space observation, and accelerator- or lab-based XUV experiments. Both planar and three dimensional multilayer structures have been developed to tailor the spectral response in a wide wavelength range. For the planar multilayer optics, different layered schemes are explored. Stacks of periodic multilayers and capping layers are demonstrated to achieve multi-channel reflection or suppression of the reflective properties. Aperiodic multilayer structures enable broadband reflection both in angles and wavelengths, with the possibility of polarization control. The broad wavelength band multilayer is also used to shape attosecond pulses for the study of ultrafast phenomena. Narrowband multilayer monochromators are delivered to bridge the resolution gap between crystals and regular multilayers. High spectral purity multilayers with innovated anti-reflection structures are shown to select spectrally clean XUV radiation from broadband X-ray sources, especially the plasma sources for EUV lithography. Significant progress is also made in the three dimensional multilayer optics, i.e., combining micro- and nanostructures with multilayers, in order to provide new freedom to tune the spectral response. Several kinds of multilayer gratings, including multilayer coated gratings, sliced multilayer gratings, and lamellar multilayer gratings are being pursued for high resolution and high efficiency XUV spectrometers/monochromators, with their advantages and disadvantages, respectively. Multilayer diffraction optics are also developed for spectral purity enhancement. New structures like gratings, zone plates, and pyramids that obtain full suppression of the unwanted radiation and high XUV reflectance are reviewed. Based on the present achievement
Analysis of microstructures for Co/Pd multilayer perpendicular magnetic recording media with carbon underlayer

International Nuclear Information System (INIS)

Asahi, T.; Kuramochi, K.; Kawaji, J.; Onoue, T.; Osaka, T.; Saigo, M.

2001-01-01

The effect of amorphous carbon underlayer thickness on the microstructure of the Co/Pd multilayer perpendicular magnetic recording media was investigated. From the magnetic force microscopy observation in the AC-demagnetized state of the Co/Pd multilayer media, the magnetic cluster size was observed to effectively decrease with an increase in carbon underlayer thickness, where the higher coercivity and the higher S/N ratio of the Co/Pd multilayer media were obtained with the thicker underlayer. Furthermore, the distribution of [1 1 1] orientation of FCC-Pd became broader, and the grain size decreased with an increase in the carbon underlayer thickness. These effects caused the magnetic exchange decoupling of Co/Pd multilayer media. We suggested that the change of microstructure was directly related to the surface roughness of the amorphous carbon underlayer
Multilayer Graphene for Waveguide Terahertz Modulator

DEFF Research Database (Denmark)

Khromova, I.; Andryieuski, Andrei; Lavrinenko, Andrei

2014-01-01

We study terahertz to infrared electromagnetic properties of multilayer graphene/dielectric artificial medium and present a novel concept of terahertz modulation at midinfrared wavelengths. This approach allows the realization of high-speed electrically controllable terahertz modulators based...... on hollow waveguide sections filled with multilayer graphene....
A quick method to determine the capacitance characteristics of thin layer X5R multilayer capacitors

NARCIS (Netherlands)

Mikkenie, R.; Steigelmann, O.; Groen, W.A.; ten Elshof, Johan E.

2012-01-01

The effect of Y2O3 concentration on the dielectric properties of ceramic disc capacitors and multilayer capacitors containing 50 dielectric layers with an approximate thickness of 3 μm were investigated. The relative permittivity and temperature coefficient of capacity of multilayer capacitors at
A quick method to determine the capacitance characteristics of thin layer X5R multilayer capacitors

NARCIS (Netherlands)

Mikkenie, R.; Steigelmann, O.; Groen, W.A.; Elshof, J.E. ten

2012-01-01

The effect of Y2O3 concentration on the dielectric properties of ceramic disc capacitors and multilayer capacitors containing 50 dielectric layers with an approximate thickness of 3µm were investigated. The relative permittivity and temperature coefficient of capacity of multilayer capacitors at low
An X-ray grazing incidence phase multilayer grating

CERN Document Server

Chernov, V A; Mytnichenko, S V

2001-01-01

An X-ray grazing incidence phase multilayer grating, representing a thin grating placed on a multilayer mirror, is proposed. A high efficiency of grating diffraction can be obtained by the possibility of changing the phase shift of the wave diffracted from the multilayer under the Bragg and total external reflection conditions. A grazing incidence phase multilayer grating consisting of Pt grating stripes on a Ni/C multilayer and optimized for the hard X-ray range was fabricated. Its diffraction properties were studied at photon energies of 7 and 8 keV. The obtained maximum value of the diffraction efficiency of the +1 grating order was 9% at 7 keV and 6.5% at 8 keV. The data obtained are in a rather good accordance with the theory.
Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

KAUST Repository

Zhou, Guangnan

2018-04-03

Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.
Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

KAUST Repository

Zhou, Guangnan; Lee, Kwang Hong; Anjum, Dalaver H.; Zhang, Qiang; Zhang, Xixiang; Tan, Chuan Seng; Xia, Guangrui

2018-01-01

Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.
High-energy x-ray microscopy with multilayer reflectors (invited)

International Nuclear Information System (INIS)

Underwood, J.H.

1986-01-01

A knowledge of the spatial distribution of the x rays emitted by the hot plasma region is a key element in the study of the physical processes occurring in laser-produced plasmas and complements other diagnostics such as spectroscopy and temporal studies. X-ray microscopy with reflection microscopes offers the most direct means of obtaining this information. Until recently, the two types of microscopes that had been developed for this purpose, the Kirkpatrick--Baez and the Wolter, operated at relatively low energies (about 4--5 keV) and had very little spectral selectivity, relying on filters for coarse spectral resolution. With the development of x-ray reflecting multilayer mirrors, the energy response of such microscopes can be extended to 10 keV or higher, with good spectral selectivity. In addition, it is possible to reduce some of the optical aberrations to obtain improved spatial resolution. This paper describes some of the recent progress in making and evaluating x-ray reflectors, and outlines the optical design considerations for multilayer-coated microscopes. Results from a prototype multilayer K--B microscope are presented
Formation of oriented membrane multilayers of Na/K-ATPase

International Nuclear Information System (INIS)

Pachence, J.M.; Knott, R.; Edelman, I.S.; Schoenborn, B.P.; Wallace, B.A.

1982-01-01

The isolated membrane-bound enzyme retains its ouabain-sensitive ATP hydrolysis activity, and produces ATP-dependent Na + and K + fluxes when incorporated into phospholipid vesicles. The ultimate goal of this work is to determine its low resolution structure using both X-ray and neutron diffraction. A number of methods were used to impart lamellar stacking order to highly purified pig Na/K-ATPase membranes. Upon partial dehydration, x-ray diffraction from Na/K-ATPase membrane multilayers at 98% relative humidity yielded discrete reflections of 118 A periodicity, diffracting to 1/14.8 A -1 , additionally, continuous diffraction to 1/10 A -1 was obtained. Subjecting the membrane multilayers to high magnetic fields improved the quality of the lamellar diffraction dramatically. Neutron diffraction studies of the partially dehydrated Na/K-ATPase membrane multilayers detected a mosaic spread of 2 0 when the samples were subjected to a magnetic field of 5 Tesla perpendicular to the membrane surface; the reflections were narrower than the camera line width; hence, the lattice disorder has also decreased significantly, although only four orders were measured
Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.

Science.gov (United States)

Jo, Seo-Hyeon; Lee, Sung-Gap; Lee, Young-Hie

2012-01-05

In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.
Experiment on a multilayer type air filter for the filtration of sodium aerosol

International Nuclear Information System (INIS)

Otake, N.; Nozaki, O.

1987-01-01

An emergency air filter system of FBR was developed by using a multilayer type filter to protect the function of HEPA filter from clogging due to loading of sodium aerosol. To examine the effect of loading of sodium aerosol on the filter system, sodium aerosol consisting of sodium oxides and the related compound was supplied to the filter system. Several parameters to determine the effectiveness of the multilayer type filter were surveyed. It was confirmed that the emergency air filter system of FBR consisting of the multilayer type filter, a medium filter, HEPA filter with standard size (610 mm x 610 mm) in series could hold 800 g-Na at 1.5 kPa without clogging
Superconductivity in multilayer perovskite. Weak coupling analysis

International Nuclear Information System (INIS)

Koikegami, Shigeru; Yanagisawa, Takashi

2006-01-01

We investigate the superconductivity of a three-dimensional d-p model with a multilayer perovskite structure on the basis of the second-order perturbation theory within the weak coupling framework. Our model has been designed with multilayer high-T c superconducting cuprates in mind. In our model, multiple Fermi surfaces appear, and the component of a superconducting gap function develops on each band. We have found that the multilayer structure can stabilize the superconductivity in a wide doping range. (author)
PECVD Tekniği ile Büyütülmüş İnce Filmlerde Oluşan Ge ve SiGe Nanokristallerin Geçirgen Elektron Mikroskobu (TEM) ,Raman ve Fotoışıma Spektroskopisi Teknikleri ile İncelenmesi

OpenAIRE

Şahin, Bünyamin; Ağan, Sedat

2009-01-01

We report an experimental study, optical properties of Ge and SiGe nanocrystals in SiOx structures are investigated by using Transmission Electron Microscopy (TEM), Raman and Photlüminescence Spectroscopy techniques. Ge nanocrystals in silicon oxide thin films have been grown with different annealing time by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The aim of our work is to determine size and size distiributions Ge, SiGe nanocrystals in SiOx martix due to annealing process...
Suitability of using monolayered and multilayered emulsions for microencapsulation of ω-3 fatty acids by spray drying

DEFF Research Database (Denmark)

Jiménez-Martín, Estefanía; Gharsallaoui, Adem; Pérez-Palacios, Trinidad

2015-01-01

Microencapsulation of ω-3 fatty acids by spray drying was studied using both monolayered (lecithin) and multilayered (lecithin-chitosan) fish oil emulsions with maltodextrin as wall material. Stability of the multilayered emulsions was higher than the monolayered ones, and increased...... with the highest concentration of chitosan (1 % w/w), being related with lower detection of TBARS at high storage temperatures. Overall, this study shows the suitability of microencapsulating ω-3 fatty acids by spray drying using both monolayered and multilayered fish oil emulsions with maltodextrin as wall...... material. Multilayered microcapsules prepared with lecithin-chitosan emulsions provide a great protective effect against lipid oxidation of fish oil during storage at moderate to high temperatures (30 °C and 60 °C). These multilayered microcapsules could be therefore successfully used as a fish oil...
Investigation of optical properties of Cu/Ni multilayer nanowires embedded in etched ion-track template

Energy Technology Data Exchange (ETDEWEB)

Xie, Lu [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Yao, Huijun, E-mail: Yaohuijun@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Duan, Jinglai; Chen, Yonghui [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Lyu, Shuangbao [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Maaz, Khan [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Nanomaterials Research Group, Physics Division, PINSTECH, Nilore 45650, Islamabad (Pakistan); Mo, Dan [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Liu, Jie, E-mail: J.Liu@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Sun, Youmei; Hou, Mingdong [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2016-12-01

Graphical abstract: The schematic diagram of measurement of extinction spectra of Cu/Ni multilayer nanowire arrays embedded in the template after removing the gold/copper substrate. - Highlights: • The optical properties of Cu/Ni multilayer nanowire arrays were first investigated by UV/Vis/NIR spectrometer and it was confirmed that the extinction peaks strongly related to the periodicity of the multilayer nanowire. • The Ni segment was thought as a kind of impurity which can change the surface electron distribution and thereby the extinction peaks of nanowire. • Current work supplied the clear layer thickness information of Cu and Ni in Cu/Ni multilayer nanowire with TEM and EDS line-scan profile analysis. - Abstract: For understanding the interaction between light and noble/magnetism multilayer nanowires, Cu/Ni multilayer nanowires are fabricated by a multi-potential step deposition technique in etched ion-track polycarbonate template. The component and the corresponding layer thickness of multilayer nanowire are confirmed by TEM and EDS line-scan analysis. By tailoring the nanowire diameter, the Cu layer thickness and the periodicity of the nanowire, the extinction spectral of nanowire arrays exhibit an extra sensitivity to the change of structural parameters. The resonance wavelength caused by surface plasmon resonance increases obviously with increasing the nanowire diameter, the Cu layer thickness and the periodicity. The observations in our work can be explained by the “impurity effect” and coupled effect and can also be optimized for developing optical devices based on multilayer nanowires.

Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

CERN Document Server

Franco, Jacopo; Groeseneken, Guido

2014-01-01

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and pr...
Soft-x-ray fluorescence study of buried silicides in antiferromagnetically coupled Fe/Si multilayers

Energy Technology Data Exchange (ETDEWEB)

Carlisle, J.A.; Chaiken, A.; Michel, R.P. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

Multilayer films made by alternate deposition of two materials play an important role in electronic and optical devices such as quantum-well lasers and x-ray mirrors. In addition, novel phenomena like giant magnetoresistance and dimensional crossover in superconductors have emerged from studies of multilayers. While sophisticated x-ray techniques are widely used to study the morphology of multilayer films, progress in studying the electronic structure has been slower. The short mean-free path of low-energy electrons severely limits the usefulness of photoemission and related electron free path of low-energy electrons severely limit spectroscopies for multilayer studies. Soft x-ray fluorescence (SXF) is a bulk-sensitive photon-in, photon-out method to study valence band electronic states. Near-edge x-ray absorption fine-structure spectroscopy (NEXAFS) measured with partial photon yield can give complementary bulk-sensitive information about unoccupied states. Both these methods are element-specific since the incident x-ray photons excite electrons from core levels. By combining NEXAFS and SXF measurements on buried layers in multilayers and comparing these spectra to data on appropriate reference compounds, it is possible to obtain a detailed picture of the electronic structure. Results are presented for a study of a Fe/Si multilayer system.
Soft-x-ray fluorescence study of buried silicides in antiferromagnetically coupled Fe/Si multilayers

International Nuclear Information System (INIS)

Carlisle, J.A.; Chaiken, A.; Michel, R.P.

1997-01-01

Multilayer films made by alternate deposition of two materials play an important role in electronic and optical devices such as quantum-well lasers and x-ray mirrors. In addition, novel phenomena like giant magnetoresistance and dimensional crossover in superconductors have emerged from studies of multilayers. While sophisticated x-ray techniques are widely used to study the morphology of multilayer films, progress in studying the electronic structure has been slower. The short mean-free path of low-energy electrons severely limits the usefulness of photoemission and related electron free path of low-energy electrons severely limit spectroscopies for multilayer studies. Soft x-ray fluorescence (SXF) is a bulk-sensitive photon-in, photon-out method to study valence band electronic states. Near-edge x-ray absorption fine-structure spectroscopy (NEXAFS) measured with partial photon yield can give complementary bulk-sensitive information about unoccupied states. Both these methods are element-specific since the incident x-ray photons excite electrons from core levels. By combining NEXAFS and SXF measurements on buried layers in multilayers and comparing these spectra to data on appropriate reference compounds, it is possible to obtain a detailed picture of the electronic structure. Results are presented for a study of a Fe/Si multilayer system
Object–relational architecture of information support of the multi-circuit calculation multilayer semiconductor nanostructures

Directory of Open Access Journals (Sweden)

Karina K. Abgaryan

2015-06-01

Full Text Available The article examines the object–relational approach to the creation of a database designed to provide informational support to the multiscale computational scheme of multilayer semiconductor nanostructures. The MSNS computational scheme developed earlier by our group uses a hierarchic representation of computational data obtained by various computational modules. Each layer of MSNS is treated separately. In contrast to well-known materials databases which serve for storing and retrieving of information on existing structures and their properties the database described in this paper is the central unit of the MSNS computational scheme. The database provides data interchange between various computational units. In this paper we describe the modern approach to material database design. More specifically, a data storage relational model which applies to solving resource-intensive and different-scale problems is proposed. An object–relational scheduler architecture is used in our work. It provides for high-speed data exchange between various computational units of the MSNS computational scheme. We introduce a simple and user-friendly interface allowing criteria-based data retrieving as well as creation of input files for computational modules. These approaches can be applied in various branches of science, including the aviation and space industry, in particular in control systems of engineering (materials science data.
Near-infrared radiation curable multilayer coating systems and methods for applying same

Science.gov (United States)

Bowman, Mark P; Verdun, Shelley D; Post, Gordon L

2015-04-28

Multilayer coating systems, methods of applying and related substrates are disclosed. The coating system may comprise a first coating comprising a near-IR absorber, and a second coating deposited on a least a portion of the first coating. Methods of applying a multilayer coating composition to a substrate may comprise applying a first coating comprising a near-IR absorber, applying a second coating over at least a portion of the first coating and curing the coating with near infrared radiation.
The characterization of multilayers analyzers: Models and measurements

International Nuclear Information System (INIS)

Henke, B.L.; Vejio, J.Y.; Tackaberry, R.E.; Yamada, H.T.

1985-01-01

A procedure is described for the detailed characterization of multilayer analyzers which can be effectively applied to their design, optimization and application for absolute x-ray spectrometry. An accurate analytical model has been developed that is based upon a simple modification of the dynamical Darwin-Prins theory to extend its application to finite multilayer systems. Its equivalence to the optical E and M solution of the Fresnel equations at each interface is demonstrated by detailed calculation comparisons for the reflectivity of a multilayer throughout the angular range of incidence of 0 to 90 0 . A special spectrograph and experimental method is described for the measurement of the absolute reflectivity characteristics of the multilayer. The experimental measurements at three photon energies in the 100-200 eV region are fit by the analytical modified Darwin-Prins equation (MDP) for I(θ), generating a detailed characterization of two ''state of the art'' multilayers, a sputtered tungsten-carbon of 2d ≅ 70 A and a molecular lead separate of 2d ≅ 100 A. The fitting parameters that are determined in this procedure are applied to help establish the structural characteristics of the particular multilayer
The neutron activation analysis in the study of Langmuir-Blodgett multilayers composition - relation to other methods of investigation

International Nuclear Information System (INIS)

Petrov, J.G.; Kulev, I.

1985-01-01

The features of the neutron activation analysis (NAA) used in the study of Langmuir-Blodget (LB) multilayers composition are compared with the following analytical techniques: radiometry, spectrophotometry, IR-spectroscopy and electron spectroscopy for chemical analysis. A very important advantage of NAA is possibility for the simultaneous determination of all the inorganic ions in the sample, especially when LB multilayers serve as models of biological systems. Thus competitive reactions of bivalent and monovalent cations (Ca 2+ /Na + , K + ) or specific reactions of counterions of equal charge (Zn 2+ /Cd 2+ . HPO 4 2- /HAsO 4 2- , SO 4 2- /CrO 4 2- ) can be investigated with great accuracy. The parallel application of onother analytical technique is necessary when the structure of the multilayers, their stability, the molecular interactions or the binding energies of the elements are to be studied. An attempt to classify roughly the applicability of each method to some particular counterions is given. Such characteristics as the lower limit of detection, simplicity of the analysis accessibility, rapidity, etc. have been taken into consideration
Ordered organic-organic multilayer growth

Science.gov (United States)

Forrest, Stephen R; Lunt, Richard R

2015-01-13

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.
Localization of multilayer networks by optimized single-layer rewiring.

Science.gov (United States)

Jalan, Sarika; Pradhan, Priodyuti

2018-04-01

We study localization properties of principal eigenvectors (PEVs) of multilayer networks (MNs). Starting with a multilayer network corresponding to a delocalized PEV, we rewire the network edges using an optimization technique such that the PEV of the rewired multilayer network becomes more localized. The framework allows us to scrutinize structural and spectral properties of the networks at various localization points during the rewiring process. We show that rewiring only one layer is enough to attain a MN having a highly localized PEV. Our investigation reveals that a single edge rewiring of the optimized MN can lead to the complete delocalization of a highly localized PEV. This sensitivity in the localization behavior of PEVs is accompanied with the second largest eigenvalue lying very close to the largest one. This observation opens an avenue to gain a deeper insight into the origin of PEV localization of networks. Furthermore, analysis of multilayer networks constructed using real-world social and biological data shows that the localization properties of these real-world multilayer networks are in good agreement with the simulation results for the model multilayer network. This paper is relevant to applications that require understanding propagation of perturbation in multilayer networks.
Neutron diffraction studies of thin film multilayer structures

International Nuclear Information System (INIS)

Majkrzak, C.F.

1985-01-01

The application of neutron diffraction methods to the study of the microscopic chemical and magnetic structures of thin film multilayers is reviewed. Multilayer diffraction phenomena are described in general and in particular for the case in which one of the materials of a bilayer is ferromagnetic and the neutron beam polarized. Recent neutron diffraction measurements performed on some interesting multilayer systems are discussed. 70 refs., 5 figs
Design and fabrication of heat resistant multilayers

International Nuclear Information System (INIS)

Thorne, J.M.; Knight, L.V.; Peterson, B.G.; Perkins, R.T.; Gray, K.J.

1986-01-01

Many promising applications of multilayer x-ray optical elements subject them to intense radiation. This paper discusses the selection of optimal pairs of materials to resist heat damage and presents simulations of multilayer performance under extreme heat loadings
Magnetic properties and interlayer coupling of sputtered Ni/V multilayers

International Nuclear Information System (INIS)

Benkirane, K.; Elkabil, R.; Lassri, M.; Abid, M.; Lassri, H.; Hamdoun, A.; Krishnan, R.

2005-01-01

The magnetic properties of sputtered Ni/V multilayers have been studied in a vibrating sample magnetometer, torque magnetometer and by ferromagnetic resonance (FMR). The magnetization decreases with decreasing Ni layer thickness, which is an indication of the structural imperfections at interface. The interface contribution to the magnetic anisotropy is practically negligible. The spin-waves resonance modes were observed for perpendicular geometry, which implied that spin waves were sustained by the whole film and propagated through V layers in some Ni/V multilayers. The relation of the resonance field H n with the mode number n obeys the so-called n 2 law and the interlayer exchange constants were determined
Advances in polyelectrolyte multilayer nanofilms as tunable drug delivery systems

Science.gov (United States)

Jiang, Bingbing; Barnett, John B; Li, Bingyun

2009-01-01

There has been considerable interest in polyelectrolyte multilayer nanofilms, which have a variety of applications ranging from optical and electrochemical materials to biomedical devices. Polyelectrolyte multilayer nanofilms are constructed from aqueous solutions using electrostatic layer-by-layer self-assembly of oppositely-charged polyelectrolytes on a solid substrate. Multifunctional polyelectrolyte multilayer nanofilms have been studied using charged dyes, metal and inorganic nanoparticles, DNA, proteins, and viruses. In the past few years, there has been increasing attention to developing polyelectrolyte multilayer nanofilms as drug delivery vehicles. In this mini-review, we present recent developments in polyelectrolyte multilayer nanofilms with tunable drug delivery properties, with particular emphasis on the strategies in tuning the loading and release of drugs in polyelectrolyte multilayer nanofilms as well as their applications. PMID:24198464
Strain and mechanical properties of the VCM multilayer sheet and their composites using the digital speckle correlation method.

Science.gov (United States)

Zhang, Dehai; Xie, Guizhong; Li, Yanqin; Liu, Jianxiu

2015-09-01

The digital speckle correlation method (DSCM) is introduced to solve the challenging problems in the related geometric measurement. Theoretical calculations of strain are deduced using the DSCM. Corresponding strains along x and y directions are obtained from uniaxial tension experiments and digital speckle measurements, using the VCM nondeep drawing multilayer sheet, the VCM deep-drawing multilayer sheet, clad films, nondeep drawing substrate, and deep-drawing substrate sheet as the targeted experimental objects. The results show that the maximum strains along the x direction of the VCM nondeep drawing multilayer sheet, the VCM deep-drawing multilayer sheet, clad film, nondeep drawing substrate, and deep-drawing substrate sheet are 68.473%, 48.632%, 91.632%, 50.784% and 40.068%, respectively, while the maximum strains along the y direction are -2.657%, -15.381%, 2.826%, -9.780% and -7.783%, respectively. The mechanical properties of the VCM multilayer sheet are between those of the substrate and clad film, while mechanical properties of the VCM deep-drawing multilayer sheet are superior to those of the VCM nondeep drawing multi-layer sheet.
Influence of alloy disorder scattering on the hole mobility of SiGe nanowires

Energy Technology Data Exchange (ETDEWEB)

Martinez-Blanque, Celso; Ruiz, Francisco G., E-mail: franruiz@ugr.es; Godoy, Andres, E-mail: agodoy@ugr.es; Marin, Enrique G.; Donetti, Luca; Gámiz, Francisco [Dpto. de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

2014-12-28

In this work, we analyze the influence of the alloy disorder (AD) scattering on the low-field hole mobility of Si{sub 1-x}Ge{sub x} nanowires (NWs). To do it, the electrostatic description is achieved through a self-consistent solution of the Poisson equation and the six-band k⋅p method in the cross section of the NW. The momentum relaxation time approximation is used to calculate the hole mobility, including alloy disorder and phonon scattering mechanisms, and the use of approximations to calculate the overlap integrals for the scattering matrix elements is discussed. We study the influence of the alloy disorder scattering on the total mobility compared to the phonon contribution, for different values of the AD scattering parameter proposed in the literature, and analyze the performance of SiGe NWs as a function of the Ge molar fraction for both low and high inversion charge densities.
Peanut sensitization pattern in Norwegian children and adults with specific IgE to peanut show age related differences.

Science.gov (United States)

Namork, Ellen; Stensby, Berit A

2015-01-01

Peanuts contain potent food allergens and the prevalence of allergy is reported to increase, especially in children. Since peanut sensitization may differ between different geographical regions, we wanted to investigate the sensitization pattern to the individual peanut allergens in a Norwegian population. Cases reported to the Norwegian Food Allergy Register with sera positive to peanut extract were analyzed for specific IgE (sIgE) to the recombinant peanut allergens Ara h 1, Ara h 2, Ara h 3, Ara h 8 and Ara h 9 and to birch pollen extract. Serum samples negative to the above allergens were analyzed for sIgE to Ara h 6, and sIgE to Pru p 3 in peach were analyzed in sera positive to the cross-reactive allergen Ara h 9. Highest frequency of sIgE to Ara h 2, often co-sensitized to Ara h 1 and 3, were found in the small children up to 6 years of age. From the age of 6 years, sensitization to Ara h 8 was predominant. The sIgE levels to the storage proteins Ara h 1, 2 and 3 were strongly correlated, as was the sIgE levels to Ara h 8 and birch pollen extract. A low sensitization rate of sIgE to Ara h 9 in young adults was observed, which sIgE levels were very strongly correlated to Pru p 3. The sensitization to peanut allergens in a Norwegian population shows a clear age dependent pattern. The results add to the previously published research on the sensitization patterns of peanut sensitized patients in different geographical areas.
Desktop aligner for fabrication of multilayer microfluidic devices.

Science.gov (United States)

Li, Xiang; Yu, Zeta Tak For; Geraldo, Dalton; Weng, Shinuo; Alve, Nitesh; Dun, Wu; Kini, Akshay; Patel, Karan; Shu, Roberto; Zhang, Feng; Li, Gang; Jin, Qinghui; Fu, Jianping

2015-07-01

Multilayer assembly is a commonly used technique to construct multilayer polydimethylsiloxane (PDMS)-based microfluidic devices with complex 3D architecture and connectivity for large-scale microfluidic integration. Accurate alignment of structure features on different PDMS layers before their permanent bonding is critical in determining the yield and quality of assembled multilayer microfluidic devices. Herein, we report a custom-built desktop aligner capable of both local and global alignments of PDMS layers covering a broad size range. Two digital microscopes were incorporated into the aligner design to allow accurate global alignment of PDMS structures up to 4 in. in diameter. Both local and global alignment accuracies of the desktop aligner were determined to be about 20 μm cm(-1). To demonstrate its utility for fabrication of integrated multilayer PDMS microfluidic devices, we applied the desktop aligner to achieve accurate alignment of different functional PDMS layers in multilayer microfluidics including an organs-on-chips device as well as a microfluidic device integrated with vertical passages connecting channels located in different PDMS layers. Owing to its convenient operation, high accuracy, low cost, light weight, and portability, the desktop aligner is useful for microfluidic researchers to achieve rapid and accurate alignment for generating multilayer PDMS microfluidic devices.
Asynchronous cracking with dissimilar paths in multilayer graphene.

Science.gov (United States)

Jang, Bongkyun; Kim, Byungwoon; Kim, Jae-Hyun; Lee, Hak-Joo; Sumigawa, Takashi; Kitamura, Takayuki

2017-11-16

Multilayer graphene consists of a stack of single-atomic-thick monolayer graphene sheets bound with π-π interactions and is a fascinating model material opening up a new field of fracture mechanics. In this study, fracture behavior of single-crystalline multilayer graphene was investigated using an in situ mode I fracture test under a scanning electron microscope, and abnormal crack propagation in multilayer graphene was identified for the first time. The fracture toughness of graphene was determined from the measured load-displacement curves and the realistic finite element modelling of specimen geometries. Nonlinear fracture behavior of the multilayer graphene is discussed based on nonlinear elastic fracture mechanics. In situ scanning electron microscope images obtained during the fracture test showed asynchronous crack propagation along independent paths, causing interlayer shear stress and slippages. We also found that energy dissipation by interlayer slippages between the graphene layers is the reason for the enhanced fracture toughness of multilayer graphene. The asynchronous cracking with independent paths is a unique cracking and toughening mechanism for single-crystalline multilayer graphene, which is not observed for the monolayer graphene. This could provide a useful insight for the design and development of graphene-based composite materials for structural applications.
Recycling of Polymer-Based Multilayer Packaging: A Review

Directory of Open Access Journals (Sweden)

Katharina Kaiser

2017-12-01

Full Text Available Polymer-based multilayer packaging materials are commonly used in order to combine the respective performance of different polymers. By this approach, the tailored functionality of packaging concepts is created to sufficiently protect sensitive food products and thus obtain extended shelf life. However, because of their poor recyclability, most multilayers are usually incinerated or landfilled, counteracting the efforts towards a circular economy and crude oil independency. This review depicts the current state of the European multilayer packaging market and sketches the current end-of-life situation of postconsumer multilayer packaging waste in Germany. In the main section, a general overview of the state of research about material recycling of different multilayer packaging systems is provided. It is divided into two subsections, whereby one describes methods to achieve a separation of the different components, either by delamination or the selective dissolution–reprecipitation technique, and the other describes methods to achieve recycling by compatibilization of nonmiscible polymer types. While compatibilization methods and the technique of dissolution–reprecipitation are already extensively studied, the delamination of packaging has not been investigated systematically. All the presented options are able to recycle multilayer packaging, but also have drawbacks like a limited scope or a high expenditure of energy.
Robust giant magnetoresistive effect type multilayer sensor

NARCIS (Netherlands)

Lenssen, K.M.H.; Kuiper, A.E.T.; Roozeboom, F.

2002-01-01

A robust Giant Magneto Resistive effect type multilayer sensor comprising a free and a pinned ferromagnetic layer, which can withstand high temperatures and strong magnetic fields as required in automotive applications. The GMR multi-layer has an asymmetric magneto-resistive curve and enables

Irradiated multilayer film for primal meat packaging

International Nuclear Information System (INIS)

Lustig, S.; Schuetz, J.M.; Vicik, S.J.

1987-01-01

This patent deals with a heat-shrinkable, multilayer film suitable for use in fabricating bags for packaging primal and sub-primal meat cuts and processed meats. The multilayer film has a first outer layer of a first ethylene-vinyl acetate copolymer, a core layer of a polyvinylidene chloride-vinyl chloride copolymer containing between about 70 weight percent and about 90 weight percent vinylidene chloride as a barrier film, and a second outer layer of a second ethylene-vinyl acetate copolymer. The multilayer film is preferably made by co-extrusion of the layers, and then it is biaxially stretched. After biaxial stretching, the entire multilayer film is substantially uniformly irradiated to a dosage level of between about 2 megarads and about 3 megarads and heat-sealed in the form of a bag. The film is not significantly discoloured by the irradiation and the bag has improved toughness properties and heat-sealing characteristics
Effect of feeders in 3D modeling of low impedance multilayer CPW transmission line

Science.gov (United States)

Zaini, R. I.; Kyabaggu, P. B. K.; Sinulingga, E. P.

2018-02-01

Improved characteristics with low dissipation loss MMICs are highly desirable for wireless communications. However, the current industrial MMIC design is mainly based on microstrip concept which suffered from parasitic and unwanted phenomenon especially at higher frequency (>20 GHz). On the other hand, for future wireless technology, higher frequency operation is required and on-wafer microwave characterizations as well as precise modeling of 3D Multilayer CPW components are vital. This project concerns with understanding of the microwave characteristics behavior of Multilayer CPW components in MMIC applications. Feeder effect as unwanted parts in the characteristics has been investigated to determine its relation with the half wavelength resonance of the Multilayer CPW Low Impedance Transmission Line.
Process of obtaining the multilayer structure

International Nuclear Information System (INIS)

Buzdugan, A.; Dolghieru, V.; Jitari, V.; Colomeico, E.; Popescu, A.

1997-01-01

The invention relates to the multilayer structures of glassy semiconductors with the refractive index abrupt and smooth variation at the bound between the layers and may be used for manufacturing the optical information transmission and recording media. With a view to simplify the technology, compositionally different layers of chalcogenide glassy semiconductors having various refractive indexes from As 2 S 3 , are being by thermal vacuum evaporation, changing the vaporization temperature thereof from 120 to 280 C
Transfer matrices for multilayer structures

International Nuclear Information System (INIS)

Baquero, R.

1988-08-01

We consider four of the transfer matrices defined to deal with multilayer structures. We deduce algorithms to calculate them numerically, in a simple and neat way. We illustrate their application to semi-infinite systems using SGFM formulae. These algorithms are of fast convergence and allow a calculation of bulk-, surface- and inner-layers band structure in good agreement with much more sophisticated calculations. Supermatrices, interfaces and multilayer structures can be calculated in this way with a small computational effort. (author). 10 refs
Polymerization of vinyl stearate multilayers by electron beam irradiation

International Nuclear Information System (INIS)

Nishii, Masanobu; Hatada, Motoyoshi

1975-01-01

Studies on the radiation-induced polymerization of vinyl stearate (VST) multilayers were carried out. The VST multilayers built-up on an aluminum plated glass plate by Langmuir-Blodgett technique were irradiated with electron beams from a Van de Graaff electron accelerator in nitrogen atmosphere. The structure of the multilayers and the effects of irradiation were investigated by X-ray diffractometry, contact angle measurement, multireflection infrared spectroscopy, and scanning electron microscopy. The VST multilayers became insoluble to methanol by the irradiation, and the multi-reflection infrared spectrum of the VST multilayers turned into that of poly (VST) with increasing dosage. The polymerization proceeded during the irradiation at the temperature range between -10 0 and 10 0 C, and the conversion attained to 90% within 2.5 minutes (total dose, 5.6 Mrads). The multilayers irradiated above 13 Mrads turned into the polymer film insoluble to benzene, indicating that the polymer chains were cross-linked by the irradiation. Stearic acid which was formed by the irradiation of VST at nitrogen-water interface as a hydrolysis product was not detected in this system. (auth.)
Corrugated grating on organic multilayer Bragg reflector

Science.gov (United States)

Jaquet, Sylvain; Scharf, Toralf; Herzig, Hans Peter

2007-08-01

Polymeric multilayer Bragg structures are combined with diffractive gratings to produce artificial visual color effects. A particular effect is expected due to the angular reflection dependence of the multilayer Bragg structure and the dispersion caused by the grating. The combined effects can also be used to design particular filter functions and various resonant structures. The multilayer Bragg structure is fabricated by spin-coating of two different low-cost polymer materials in solution on a cleaned glass substrate. These polymers have a refractive index difference of about 0.15 and permit multilayer coatings without interlayer problems. Master gratings of different periods are realized by laser beam interference and replicated gratings are superimposed on the multilayer structure by soft embossing in a UV curing glue. The fabrication process requires only polymer materials. The obtained devices are stable and robust. Angular dependent reflection spectrums for the visible are measured. These results show that it is possible to obtain unexpected reflection effects. A rich variety of color spectra can be generated, which is not possible with a single grating. This can be explained by the coupling of transmission of grating orders and the Bragg reflection band. A simple model permits to explain some of the spectral vs angular dependence of reflected light.
Inkjet-printed Polyvinyl Alcohol Multilayers.

Science.gov (United States)

Salaoru, Iulia; Zhou, Zuoxin; Morris, Peter; Gibbons, Gregory J

2017-05-11

Inkjet printing is a modern method for polymer processing, and in this work, we demonstrate that this technology is capable of producing polyvinyl alcohol (PVOH) multilayer structures. A polyvinyl alcohol aqueous solution was formulated. The intrinsic properties of the ink, such as surface tension, viscosity, pH, and time stability, were investigated. The PVOH-based ink was a neutral solution (pH 6.7) with a surface tension of 39.3 mN/m and a viscosity of 7.5 cP. The ink displayed pseudoplastic (non-Newtonian shear thinning) behavior at low shear rates, and overall, it demonstrated good time stability. The wettability of the ink on different substrates was investigated, and glass was identified as the most suitable substrate in this particular case. A proprietary 3D inkjet printer was employed to manufacture polymer multilayer structures. The morphology, surface profile, and thickness uniformity of inkjet-printed multilayers were evaluated via optical microscopy.
Transmission fingerprints in quasiperiodic magnonic multilayers

Energy Technology Data Exchange (ETDEWEB)

Coelho, I.P. [Departamento de Ensino Superior, Instituto Federal de Educacao, Ciencia e Tecnologia do Maranhao, Imperatriz-MA 65919-050 (Brazil); Departamento de Fisica, Universidade Federal do Rio Grande do Norte, Natal-RN 59072-970 (Brazil); Vasconcelos, M.S. [Escola de Ciencias e Tecnologia, Universidade Federal do Rio Grande do Norte, Natal-RN 59072-970 (Brazil); Bezerra, C.G., E-mail: cbezerra@dfte.ufrn.br [Departamento de Fisica, Universidade Federal do Rio Grande do Norte, Natal-RN 59072-970 (Brazil)

2011-12-15

In this paper we investigated the influence of mirror symmetry on the transmission spectra of quasiperiodic magnonic multilayers arranged according to Fibonacci, Thue-Morse and double period quasiperiodic sequences. We consider that the multilayers composed of two simple cubic Heisenberg ferromagnets with bulk exchange constants J{sub A} and J{sub B} and spin quantum numbers S{sub A} and S{sub B}, respectively. The multilayer structure is surrounded by two semi-infinite slabs of a third Heisenberg ferromagnetic material with exchange constant J{sub C} and spin quantum number S{sub C}. For simplicity, the lattice constant has the same value a in each material, corresponding to epitaxial growth at the interfaces. The transfer matrix treatment was used for the exchange-dominated regime, taking into account the random phase approximation (RPA). Our numerical results illustrate the effects of mirror symmetry on (i) transmission spectra and (ii) transmission fingerprints. - Highlights: > We model quasiperiodic magnetic multilayers presenting mirror symmetry. > We investigated the allowed and forbidden bands of magnonic transmission. > Transmission return maps show the influence of mirror symmetry. > Mirror symmetry has no effect on the Fibonacci case. > Mirror symmetry does have effect on the Thue-Morse and double period cases.
Transmission fingerprints in quasiperiodic magnonic multilayers

International Nuclear Information System (INIS)

Coelho, I.P.; Vasconcelos, M.S.; Bezerra, C.G.

2011-01-01

In this paper we investigated the influence of mirror symmetry on the transmission spectra of quasiperiodic magnonic multilayers arranged according to Fibonacci, Thue-Morse and double period quasiperiodic sequences. We consider that the multilayers composed of two simple cubic Heisenberg ferromagnets with bulk exchange constants J A and J B and spin quantum numbers S A and S B , respectively. The multilayer structure is surrounded by two semi-infinite slabs of a third Heisenberg ferromagnetic material with exchange constant J C and spin quantum number S C . For simplicity, the lattice constant has the same value a in each material, corresponding to epitaxial growth at the interfaces. The transfer matrix treatment was used for the exchange-dominated regime, taking into account the random phase approximation (RPA). Our numerical results illustrate the effects of mirror symmetry on (i) transmission spectra and (ii) transmission fingerprints. - Highlights: → We model quasiperiodic magnetic multilayers presenting mirror symmetry. → We investigated the allowed and forbidden bands of magnonic transmission. → Transmission return maps show the influence of mirror symmetry. → Mirror symmetry has no effect on the Fibonacci case. → Mirror symmetry does have effect on the Thue-Morse and double period cases.
Symmetric scrolled packings of multilayered carbon nanoribbons

Science.gov (United States)

Savin, A. V.; Korznikova, E. A.; Lobzenko, I. P.; Baimova, Yu. A.; Dmitriev, S. V.

2016-06-01

Scrolled packings of single-layer and multilayer graphene can be used for the creation of supercapacitors, nanopumps, nanofilters, and other nanodevices. The full atomistic simulation of graphene scrolls is restricted to consideration of relatively small systems in small time intervals. To overcome this difficulty, a two-dimensional chain model making possible an efficient calculation of static and dynamic characteristics of nanoribbon scrolls with allowance for the longitudinal and bending stiffness of nanoribbons is proposed. The model is extended to the case of scrolls of multilayer graphene. Possible equilibrium states of symmetric scrolls of multilayer carbon nanotribbons rolled up so that all nanoribbons in the scroll are equivalent are found. Dependences of the number of coils, the inner and outer radii, lowest vibrational eigenfrequencies of rolled packages on the length L of nanoribbons are obtained. It is shown that the lowest vibrational eigenfrequency of a symmetric scroll decreases with a nanoribbon length proportionally to L -1. It is energetically unfavorable for too short nanoribbons to roll up, and their ground state is a stack of plane nanoribbons. With an increasing number k of layers, the nanoribbon length L necessary for creation of symmetric scrolls increases. For a sufficiently small number of layers k and a sufficiently large nanoribbon length L, the scrolled packing has the lowest energy as compared to that of stack of plane nanoribbons and folded structures. The results can be used for development of nanomaterials and nanodevices on the basis of graphene scrolled packings.
EUV multilayer mirror, optical system including a multilayer mirror and method of manufacturing a multilayer mirror

NARCIS (Netherlands)

Huang, Qiushi; Louis, Eric; Bijkerk, Frederik; de Boer, Meint J.; von Blanckenhagen, G.

2016-01-01

A multilayer mirror (M) reflecting extreme ultraviolet (EUV) radiation from a first wave-length range in a EUV spectral region comprises a substrate (SUB) and a stack of layers (SL) on the substrate, the stack of layers comprising layers comprising a low index material and a high index material, the
Atmospheric plasma assisted PLA/microfibrillated cellulose (MFC) multilayer biocomposite for sustainable barrier application

DEFF Research Database (Denmark)

Meriçer, Çağlar; Minelli, Matteo; Angelis, Maria G De

2016-01-01

Fully bio-based and biodegradable materials, such as polylactic acid (PLA) and microfibrillated cellulose (MFC), are considered in order to produce a completely renewable packaging solution for oxygen barrier applications, even at medium-high relative humidity (R.H.). Thin layers of MFC were coated...... on different PLA substrates by activating film surface with an atmospheric plasma treatment, leading to the fabrication of robust and transparent multilayer composite films, which were then characterized by different experimental techniques. UV transmission measurements confirmed the transparency of multilayer...... films (60% of UV transmission rate), while SEM micrographs showed the presence of a continuous, dense and defect free layer of MFC on PLA surface. Concerning the mechanical behavior of the samples, tensile tests revealed that the multilayer films significantly improved the stress at break value of neat...
Influence of irradiation on mechanical properties of Si-Ge alloys

Energy Technology Data Exchange (ETDEWEB)

Sichinava, Avtandil; Bokuchava, Guram; Chubinidze, Giorgi; Archuadze, Giorgi [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Gapishvili, Nodar [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Georgian Technical University, Tbilisi (Georgia)

2017-07-15

Impact of various irradiation (Ar and He ions, high energy electrons) on microhardness and indentation of monocrystalline Si{sub 0,98}Ge{sub 0,02} alloy is studied. Samples of Si and SiGe alloy are obtained by Czochralski (CZ) method in the [111] direction in the atmosphere of high purity Ar. High energy electron irradiation with fluence of ∝10{sup 12} cm{sup -2} is conducted at the Clinac 2100iX. Ar and He ion implantation is performed on modernized ''VEZUVI-3M'' plant. It is shown that for all types of irradiation the microhardness and indentation modulus versus load are characterized by reverse indentation size effect (ISE). With the increase of fluences of Ar and He ions, the maximum value of the effect increases. At high values of loading force impact on the indenter the mechanical characteristics slowly decrease. Impact of isochronous thermal annealing on mechanical properties of high energy electron irradiated samples is studied. Non-monotonic changes of microhardness and indentation modulus are revealed in the temperature range of 200-260 C. It is proposed that such changes are caused by radiation defects transformation. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
High-frequency characteristics of glass/ceramic composite and alumina multilayer structures

International Nuclear Information System (INIS)

Niwa, K.; Suzuki, H.; Yokoyama, H.; Kamechara, N.; Tsubone, K.; Tanisawa, H.; Sugiki, H.

1990-01-01

This paper reports the transmission characteristics of glass/ceramic composite (borosilicate glass/alumina) and alumina multilayer structures examined. The triplate stripline formed in the glass/ceramic multilayer shows low conductor and dielectric loss. Alumina multilayer, however, has twice the transmission loss at 10 GHz, because the resistivity of W in the alumina multilayer is higher than the Cu in the glass/ceramic multilayer. Crosstalk between striplines in the glass/ceramics is less than -80 dB up to 11 GHz and 9 GHz for alumina
Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers

KAUST Repository

Zhang, Qiang

2017-04-21

The effect of interfacial scattering on anomalous Hall effect (AHE) was studied in the ${{\\\\left(\\\\text{N}{{\\\\text{i}}_{\\\\frac{36}{n}~\\\\text{nm}}}/\\\\text{A}{{\\\\text{u}}_{\\\\frac{12}{n}~\\\\text{nm}}}\\ ight)}_{n}}$ multilayers. Field-dependent Hall resistivity was measured in the temperature range of 5–300 K with the magnetic field up to 50 kOe. The anomalous Hall resistivity (${{\\ ho}_{\\\\text{AHE}}}$ ) was enhanced by more than six times at 5 K from n = 1 to n = 12 due to the increased interfacial scattering, whereas the longitudinal resistivity (${{\\ ho}_{xx}}$ ) was increased nearly three times. A scaling relation ${{\\ ho}_{\\\\text{AHE}}}\\\\sim \\ ho _{xx}^{\\\\gamma}$ with $\\\\gamma =1.85$ was obtained for ${{\\ ho}_{\\\\text{AHE}}}$ and ${{\\ ho}_{xx}}$ measured at 5 K, indicating that the dominant mechanism(s) of the AHE in these multilayers should be side-jump or/and intrinsic in nature. The new scaling relation ${{\\ ho}_{\\\\text{AHE}}}=\\\\alpha {{\\ ho}_{xx0}}+\\\\beta \\ ho _{xx0}^{2}+b\\ ho _{xx}^{2}$ (Tian et al 2009 Phys. Rev. Lett. 103 087206) has been applied to our data to identify the origin of the AHE in this type of multilayer.
Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress

International Nuclear Information System (INIS)

Alaeddine, A; Genevois, C; Cuvilly, F; Daoud, K; Kadi, M

2011-01-01

This paper addresses electromagnetic field stress effects on SiGe heterojunction bipolar transistors (HBTs)' reliability issues, focusing on the relationship between the stress-induced current and device structure degradations. The origin of leakage currents and electrical parameter shifts in failed transistors has been studied by complementary failure analysis techniques. Characterization of the structure before and after ageing was performed by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). For the stressed samples, interface deformations of the titanium (Ti) thin film around all gold (Au) contacts have been clearly detected. These degradations include localized interface reaction between Au and Ti layers as well as their lateral atomic migration causing a significant reduction of Ti thickness. EDS analysis of the disordered region which is near the Si 3 N 4 interface has shown significant signals from Au. These observations could be attributed to the coupling between high current densities induced by stress and thermal effects due to local heating effects
Diffusion Mechanisms and Lattice Locations of Thermal-Equilibrium Defects in Si-Ge Alloys

CERN Multimedia

Lyutovich, K; Touboltsev, V; Laitinen, P O; Strohm, A

2002-01-01

It is generally accepted that Ge and Si differ considerably with respect to intrinsic-point-defect-mediated diffusion. In Ge, the native point defects dominating under thermal-equilibium conditions at all solid-state temperatures accessible in diffusion experiments are vacancies, and therefore Ge self-diffusion is vacancy-controlled. In Si, by contrast, self-interstitials and vacancies co-exist in thermal equilibrium. Whereas in the most thoroughly investigated temperature regime above about 1000$^\\circ$C Si self-diffusion is self-interstitial-controlled, it is vacancy-controlled at lower temperatures. According to the scenario displayed above, self-diffusion in Si-Ge alloys is expected to change from an interstitialcy mechanism on the Si side to a vacancy mechanism on the Ge side. Therefore, $^{71}$Ge self-diffusion experiments in Si$_{1- \\it y}$Ge$_{\\it y}$ as a function of composition Y are highly interesting. In a first series of experiments the diffusion of Ge in 0.4 to 10 $\\mu$m thick, relaxed, low-disl...
Multilayer optics for x-ray analysis: design - fabrication - application

International Nuclear Information System (INIS)

Dietsch, R.; Holz, Th.; Bruegemann, L.

2002-01-01

Full text: The use of multilayer optics induced a decisive extension of opportunities in laboratory based X-ray analysis. With the growing number of different applications, more and more dedicated X-ray optics are required, optimized for the spectral range they are intended to be used for. Both the characteristic of the used X-ray source and the design of the multilayer optics finally define the performance of the conditioned incident beam for the application. In any case, qualified spacer and absorber materials have to be selected for the deposition of the multilayer in respect to the designated X-ray wavelength. X-ray optical devices based on uniform multilayers have the advantage of a wide acceptance angle but show chromatic aberrations. This effect can be avoided by synthesizing a multilayer with a lateral thickness gradient. The gradient ensures that any beam of a certain wavelength emitted from an infinite narrow X-ray source impinging the multilayer optics fulfills the Bragg condition. Three different types of curvature of laterally graded multilayer mirrors are used for X-ray analysis experiments: parabolic, elliptic and planar, which result in parallel, focusing and divergent beam conditions, respectively. Furthermore, the X-ray beam characteristics: intensity, monochromasy, divergence, beam width and brilliance can be additionally conditioned by combining one multilayer optics with either a different optic and/or with a crystal monochromator. The deposition of nanometer-multilayers, used as X-ray optical components, result in extraordinary requirements of the deposition process concerning precision, reproducibility and long term stability. Across a stack of more than 150 individual layers with thicknesses in the range between 1 to 10 nm, a variation of single layer thickness considerably lower than σ D = 0.1 nm and an interface roughness below σ R = 0.25 nm have to be achieved. Thickness homogeneity Δd/d -8 have to be guaranteed across macroscopic
Bonded Multilayer Laue Lens for focusing hard X-rays

International Nuclear Information System (INIS)

Liu Chian; Conley, R.; Qian, J.; Kewish, C.M.; Macrander, A.T.; Maser, J.; Kang, H.C.; Yan, H.; Stephenson, G.B.

2007-01-01

We have fabricated partial Multilayer Laue Lens (MLL) linear zone plate structures with thousands of alternating WSi 2 and Si layers and various outermost zone widths according to the Fresnel zone plate formula. Using partial MLL structures, we were able to focus hard X-rays to line foci with a width of 30 nm and below. Here, we describe challenges and approaches used to bond these multilayers to achieve line and point focusing. Bonding was done by coating two multilayers with AuSn and heating in a vacuum oven at 280-300 o C. X-ray reflectivity measurements confirmed that there was no change in the multilayers after heating to 350 o C. A bonded MLL was polished to a 5-25 μm wedge without cracking. SEM image analyses found well-positioned multilayers after bonding. These results demonstrate the feasibility of a bonded full MLL for focusing hard X-rays
Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires.

Science.gov (United States)

Das, Suvankar; Moitra, Amitava; Bhattacharya, Mishreyee; Dutta, Amlan

2015-01-01

The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on the nanowires. In addition, the thermally induced stress is perceived in the context of buckling instability. The analysis provides a trade-off between the geometrical and operational parameters of the nanostructures. The proposed methodology can be extended to other materials and structures and helps with the prediction of the conditions under which a nanowire-based device might possibly fail due to elastic instability.

Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

Science.gov (United States)

Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

2018-04-01

The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.
Measure of Node Similarity in Multilayer Networks.

Directory of Open Access Journals (Sweden)

Anders Mollgaard

Full Text Available The weight of links in a network is often related to the similarity of the nodes. Here, we introduce a simple tunable measure for analysing the similarity of nodes across different link weights. In particular, we use the measure to analyze homophily in a group of 659 freshman students at a large university. Our analysis is based on data obtained using smartphones equipped with custom data collection software, complemented by questionnaire-based data. The network of social contacts is represented as a weighted multilayer network constructed from different channels of telecommunication as well as data on face-to-face contacts. We find that even strongly connected individuals are not more similar with respect to basic personality traits than randomly chosen pairs of individuals. In contrast, several socio-demographics variables have a significant degree of similarity. We further observe that similarity might be present in one layer of the multilayer network and simultaneously be absent in the other layers. For a variable such as gender, our measure reveals a transition from similarity between nodes connected with links of relatively low weight to dis-similarity for the nodes connected by the strongest links. We finally analyze the overlap between layers in the network for different levels of acquaintanceships.
Spectroscopic characterization of ion-irradiated multi-layer graphenes

Energy Technology Data Exchange (ETDEWEB)

Tsukagoshi, Akira [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Honda, Shin-ichi, E-mail: s-honda@eng.u-hyogo.ac.jp [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Osugi, Ryo [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Okada, Hiraku [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); Niibe, Masahito [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); Terasawa, Mititaka [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Hirase, Ryuji; Izumi, Hirokazu; Yoshioka, Hideki [Hyogo Prefectural Institute of Technology, Kobe 654-0037 (Japan); Niwase, Keisuke [Hyogo University of Teacher Education, Kato, Hyogo 673-1494 (Japan); Taguchi, Eiji [Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047 (Japan); Lee, Kuei-Yi [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Oura, Masaki [RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan)

2013-11-15

Low-energy Ar ions (0.5–2 keV) were irradiated to multi-layer graphenes and the damage process, the local electronic states, and the degree of alignment of the basal plane, and the oxidation process upon ion irradiation were investigated by Raman spectroscopy, soft X-ray absorption spectroscopy (XAS) and in situ X-ray photoelectron spectroscopy (XPS). By Raman spectroscopy, we observed two stages similar to the case of irradiated graphite, which should relate to the accumulations of vacancies and turbulence of the basal plane, respectively. XAS analysis indicated that the number of sp{sup 2}-hybridized carbon (sp{sup 2}-C) atoms decreased after ion irradiation. Angle-resolved XAS revealed that the orientation parameter (OP) decreased with increasing ion energy and fluence, reflecting the turbulence of the basal plane under irradiation. In situ XPS shows the oxidation of the irradiated multi-layer graphenes after air exposure.
Multilayer cladding with hyperbolic dispersion for plasmonic waveguides

DEFF Research Database (Denmark)

Babicheva, Viktoriia; Shalaginov, Mikhail Y.; Ishii, Satoshi

2015-01-01

We study the properties of plasmonic waveguides with a dielectric core and multilayer metal-dielectric claddings that possess hyperbolic dispersion. The waveguides hyperbolic multilayer claddings show better performance in comparison to conventional plasmonic waveguides. © OSA 2015....
Multilayer heterostructures and their manufacture

Science.gov (United States)

Hammond, Scott R; Reese, Matthew; Rupert, Benjamin; Miedaner, Alexander; Curtis, Clavin; Olson, Dana; Ginley, David S

2015-11-04

A method of synthesizing multilayer heterostructures including an inorganic oxide layer residing on a solid substrate is described. Exemplary embodiments include producing an inorganic oxide layer on a solid substrate by a liquid coating process under relatively mild conditions. The relatively mild conditions include temperatures below 225.degree. C. and pressures above 9.4 mb. In an exemplary embodiment, a solution of diethyl aluminum ethoxide in anhydrous diglyme is applied to a flexible solid substrate by slot-die coating at ambient atmospheric pressure, and the diglyme removed by evaporation. An AlO.sub.x layer is formed by subjecting material remaining on the solid substrate to a relatively mild oven temperature of approximately 150.degree. C. The resulting AlO.sub.x layer exhibits relatively high light transmittance and relatively low vapor transmission rates for water. An exemplary embodiment of a flexible solid substrate is polyethylene napthalate (PEN). The PEN is not substantially adversely affected by exposure to 150.degree. C
Improvement of corrosion resistance of transparent conductive multilayer coating consisting of silver layers and transparent metal oxide layers

International Nuclear Information System (INIS)

Koike, Katsuhiko; Yamazaki, Fumiharu; Okamura, Tomoyuki; Fukuda, Shin

2007-01-01

An optical filter for plasma display panel (PDP) requires an electromagnetic shield with very high ability. The authors investigated a transparent conductive multilayer coating consisting of silver (Ag) layers and transparent metal oxide layers. The durability of the multilayer sputter coating, including the silver layer, is very sensitive to the surrounding atmosphere. For example, after an exposure test they found discolored points on the multilayer sputter coatings, possibly caused by migration of silver atoms in the silver layers. In their investigation, they modified the top surface of the multilayer sputter coatings with transition metals to improve the corrosion resistance of the multilayer coating. Specifically, they deposited transition metals 0.5-2 nm thick on the top surface of the multilayer coatings by sputtering. They chose indium tin oxide (ITO) as the transparent metal oxide. They applied the multilayer sputter coatings of seven layers to a polyethylene terephthalate (PET) film substrate. A cross-sectional structure of the film with the multilayer coatings is PET film/ITO/Ag/ITO/Ag/ITO/Ag/ITO. They evaluated the corrosion resistance of the films by a salt-water immersion test. In the test, they immersed the film with multilayer coatings into salt water, and then evaluated the appearance, transmittance, and electrical resistance of the multilayer coatings. They investigated several transition metals as the modifying material, and found that titanium and tantalum drastically improved the resistance of the multilayer coatings to the salt-water exposure without a significant decline in transmittance. They also investigated the relation between elapsed time after deposition of the modifying materials and resistance to the salt water. Furthermore, they investigated the effects of a heat treatment and an oxide plasma treatment on resistance to the salt water
Safety by design of printed multilayer materials intended for food packaging.

Science.gov (United States)

Domeño, Celia; Aznar, Margarita; Nerín, Cristina; Isella, Francesca; Fedeli, Mauro; Bosetti, Osvaldo

2017-07-01

Printing inks are commonly used in multilayer plastics materials used for food packaging, and compounds present in inks can migrate to the food either by diffusion through the multilayers or because of set-off phenomena. To avoid this problem, the right design of the packaging is crucial. This paper studies the safety by design of multilayer materials. First, the migration from four different multilayers manufactured using polyethylene terephthalate (PET), aluminium (Al) and polyethylene (PE) was determined. The structural differences among materials such as the presence of inks or lacquer coatings as well as the differences in layers position allowed the study of a safety-by-design approach. Sixty-nine different compounds were detected and identified; 49 of them were not included in the positive list of Regulation EU/10/2011 or in Swiss legislation and 15 belong to Cramer class III, which means that they have a theoretical high toxicity. Some of the compounds related to ink composition were pyrene, a compound commercially used to make dyes and dye precursors and the antioxidant Irganox 1300. The application of external lacquers decreased the concentration of some migrants but also brought the potential for new migrants coming from its composition. A final risk assessment of the material allowed evaluating food safety for different food simulants and confirm it.
Advanced materials for multilayer mirrors for extreme ultraviolet solar astronomy.

Science.gov (United States)

Bogachev, S A; Chkhalo, N I; Kuzin, S V; Pariev, D E; Polkovnikov, V N; Salashchenko, N N; Shestov, S V; Zuev, S Y

2016-03-20

We provide an analysis of contemporary multilayer optics for extreme ultraviolet (EUV) solar astronomy in the wavelength ranges: λ=12.9-13.3 nm, λ=17-21 nm, λ=28-33 nm, and λ=58.4 nm. We found new material pairs, which will make new spaceborne experiments possible due to the high reflection efficiencies, spectral resolution, and long-term stabilities of the proposed multilayer coatings. In the spectral range λ=13 nm, Mo/Be multilayer mirrors were shown to demonstrate a better ratio of reflection efficiency and spectral resolution compared with the commonly used Mo/Si. In the spectral range λ=17-21 nm, a new multilayer structure Al/Si was proposed, which had higher spectral resolution along with comparable reflection efficiency compared with the commonly used Al/Zr multilayer structures. In the spectral range λ=30 nm, the Si/B4C/Mg/Cr multilayer structure turned out to best obey reflection efficiency and long-term stability. The B4C and Cr layers prevented mutual diffusion of the Si and Mg layers. For the spectral range λ=58 nm, a new multilayer Mo/Mg-based structure was developed; its reflection efficiency and long-term stability have been analyzed. We also investigated intrinsic stresses inherent for most of the multilayer structures and proposed possibilities for stress elimination.
Identifying key nodes in multilayer networks based on tensor decomposition.

Science.gov (United States)

Wang, Dingjie; Wang, Haitao; Zou, Xiufen

2017-06-01

The identification of essential agents in multilayer networks characterized by different types of interactions is a crucial and challenging topic, one that is essential for understanding the topological structure and dynamic processes of multilayer networks. In this paper, we use the fourth-order tensor to represent multilayer networks and propose a novel method to identify essential nodes based on CANDECOMP/PARAFAC (CP) tensor decomposition, referred to as the EDCPTD centrality. This method is based on the perspective of multilayer networked structures, which integrate the information of edges among nodes and links between different layers to quantify the importance of nodes in multilayer networks. Three real-world multilayer biological networks are used to evaluate the performance of the EDCPTD centrality. The bar chart and ROC curves of these multilayer networks indicate that the proposed approach is a good alternative index to identify real important nodes. Meanwhile, by comparing the behavior of both the proposed method and the aggregated single-layer methods, we demonstrate that neglecting the multiple relationships between nodes may lead to incorrect identification of the most versatile nodes. Furthermore, the Gene Ontology functional annotation demonstrates that the identified top nodes based on the proposed approach play a significant role in many vital biological processes. Finally, we have implemented many centrality methods of multilayer networks (including our method and the published methods) and created a visual software based on the MATLAB GUI, called ENMNFinder, which can be used by other researchers.
Finite element modeling of multilayered structures of fish scales.

Science.gov (United States)

Chandler, Mei Qiang; Allison, Paul G; Rodriguez, Rogie I; Moser, Robert D; Kennedy, Alan J

2014-12-01

The interlinked fish scales of Atractosteus spatula (alligator gar) and Polypterus senegalus (gray and albino bichir) are effective multilayered armor systems for protecting fish from threats such as aggressive conspecific interactions or predation. Both types of fish scales have multi-layered structures with a harder and stiffer outer layer, and softer and more compliant inner layers. However, there are differences in relative layer thickness, property mismatch between layers, the property gradations and nanostructures in each layer. The fracture paths and patterns of both scales under microindentation loads were different. In this work, finite element models of fish scales of A. spatula and P. senegalus were built to investigate the mechanics of their multi-layered structures under penetration loads. The models simulate a rigid microindenter penetrating the fish scales quasi-statically to understand the observed experimental results. Study results indicate that the different fracture patterns and crack paths observed in the experiments were related to the different stress fields caused by the differences in layer thickness, and spatial distribution of the elastic and plastic properties in the layers, and the differences in interface properties. The parametric studies and experimental results suggest that smaller fish such as P. senegalus may have adopted a thinner outer layer for light-weighting and improved mobility, and meanwhile adopted higher strength and higher modulus at the outer layer, and stronger interface properties to prevent ring cracking and interface cracking, and larger fish such as A. spatula and Arapaima gigas have lower strength and lower modulus at the outer layers and weaker interface properties, but have adopted thicker outer layers to provide adequate protection against ring cracking and interface cracking, possibly because weight is less of a concern relative to the smaller fish such as P. senegalus. Published by Elsevier Ltd.
Magnetic studies in evaporated Ni/Pd multilayers

International Nuclear Information System (INIS)

Chafai, K.; Salhi, H.; Lassri, H.; Yamkane, Z.; Lassri, M.; Abid, M.; Hlil, E.K.; Krishnan, R.

2011-01-01

The magnetic properties of Ni/Pd multilayers, prepared by sequential evaporation in ultrahigh vacuum, have been studied. The Ni thickness dependence of the magnetization and magnetic anisotropy is discussed. The temperature dependence of the spontaneous magnetization is well described by a T 3/2 law in all multilayers. A spin-wave theory has been used to explain the temperature dependence of the spontaneous magnetization, and the approximate values for the exchange interactions for various Ni layer thicknesses have been obtained. - Research highlights: → The magnetic properties of Ni/Pd multilayers, prepared by sequential evaporation in ultrahigh vacuum, have been studied. → The temperature dependence of the spontaneous magnetization is well described by a T 3/2 law in Ni/Pd multilayers. → The spin-wave constant B was observed to depend on t Ni nonmonotonically. → A spin-wave theory has been used to explain the temperature dependence of the spontaneous magnetization. → The approximate values for the exchange interactions for various Ni layer thicknesses have been obtained.
Multilayer DLC coatings via alternating bias during magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Li Fengji [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore); Zhang, Sam, E-mail: msyzhang@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore); Kong Junhua [School of Materials Science and Engineering, Nanyang Technological University (Singapore); Zhang Yujuan [Key Laboratory of Special Functional Material, Henan University (China); Zhang Wali [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore)

2011-05-31

To combat the high residual stress problem in monolayer diamond-like carbon coatings, this paper fabricated multilayer diamond-like carbon coatings with alternate soft and hard layers via alternating bias during magnetron sputtering. The surface, cross sectional morphology, bonding structures and mechanical properties are investigated. The atomic force microscopy images indicate low bias results in rougher surface with large graphite clusters and voids suggesting low coating density. The multilayered coatings demonstrate relatively smooth surface stemming from higher bias. The cross sectional images from field emission scanning electron microscopy indicate coating thickness decreases as substrate bias increases and confirm that higher bias results in denser coating. Delamination is observed in monolayer coatings due to high residual stress. The trend of sp{sup 3}/sp{sup 2} fraction estimated by X-ray photoelectron spectroscopy is consistent with that of I{sub D}/I{sub G} ratios from Raman spectra, indicating the change of bonding structure with change of substrate bias. Hardness of multilayer diamond-like carbon coating is comparable to the coatings deposited at low constant bias but the adhesion strength and toughness are significantly improved. Alternately biased sputtering deposition provides an alternative when combination of hardness, toughness and adhesion strength is needed in an all diamond-like carbon coating.
Fabrication and performance characterization of Al/Ni multilayer energetic films

Science.gov (United States)

Yang, Cheng; Hu, Yan; Shen, Ruiqi; Ye, Yinghua; Wang, Shouxu; Hua, Tianli

2014-02-01

Al/Ni multilayer bridge films, which were composed of alternate Al and Ni layers with bilayer thicknesses of 50, 100 and 200 nm, were prepared by RF magnetron sputtering. In each bilayer, the thickness ratio of Al to Ni was maintained at 3:2 to obtain an overall 1:1 atomic composition. The total thickness of Al/Ni multilayer films was 2 μm. XRD measurements show that the compound of AlNi is the final product of the exothermic reactions. DSC curves show that the values of heat release in Al/Ni multilayer films with bilayer thicknesses of 50, 100 and 200 nm are 389.43, 396.69 and 409.92 J g-1, respectively. The temperatures of Al/Ni multilayer films were obviously higher than those of Al bridge film and Ni bridge film. Al/Ni multilayer films with modulation of 50 nm had the highest electrical explosion temperature of 7000 K. The exothermic reaction in Al/Ni multilayer films leads to a more intense electric explosion. Al/Ni multilayer bridge films with modulation period of 50 nm explode more rapidly and intensely than other bridge films because decreasing the bilayer thickness results in an increased reaction velocity.
Design of a normal incidence multilayer imaging X-ray microscope

Science.gov (United States)

Shealy, David L.; Gabardi, David R.; Hoover, Richard B.; Walker, Arthur B. C., Jr.; Lindblom, Joakim F.

Normal incidence multilayer Cassegrain X-ray telescopes were flown on the Stanford/MSFC Rocket X-ray Spectroheliograph. These instruments produced high spatial resolution images of the sun and conclusively demonstrated that doubly reflecting multilayer X-ray optical systems are feasible. The images indicated that aplanatic imaging soft X-ray/EUV microscopes should be achievable using multilayer optics technology. A doubly reflecting normal incidence multilayer imaging X-ray microscope based on the Schwarzschild configuration has been designed. The design of the microscope and the results of the optical system ray trace analysis are discussed. High resolution aplanatic imaging X-ray microscopes using normal incidence multilayer X-ray mirrors should have many important applications in advanced X-ray astronomical instrumentation, X-ray lithography, biological, biomedical, metallurgical, and laser fusion research.
78 FR 30329 - Multilayered Wood Flooring from China

Science.gov (United States)

2013-05-22

...)] Multilayered Wood Flooring from China AGENCY: United States International Trade Commission. ACTION: Notice of...-1179 (Final) concerning multilayered wood flooring (``MLWF'') from China. For further information... reconsider ``its decision not to investigate domestic producers of hardwood plywood used for flooring'' 2. to...
POLYELECTROLYTE MULTILAYER STAMPING IN AQUEOUS PHASE AND NON-CONTACT MODE

Science.gov (United States)

Mehrotra, Sumit; Lee, Ilsoon; Liu, Chun; Chan, Christina

2011-01-01

Polyelectrolyte multilayer (PEM) transfer printing has been previously achieved by stamping under dry conditions. Here, we show for the first time, that PEM can be transferred from a stamp to the base substrate under aqueous conditions whereby the two surfaces are in a non-contact mode. Degradable multilayers of (PAA/PEG)10.5 followed by non-degradable multilayers of (PDAC/SPS)80.5 were fabricated under acidic pH conditions on either PDMS or glass (stamp), and subsequently transferred over top of another multilayer prepared on a different substrate (base substrate), with a spacing of ~ 200 μm between the stamping surface and the base substrate. This multilayer transfer was performed under physiological pH conditions. This process is referred to herein as non-contact, aqueous-phase multilayer (NAM) transfer. NAM transfer can be useful for applications such as fabricating three-dimensional (3-D) cellular scaffolds. We attempted to create a 3-D cellular scaffold using NAM transfer, and characterized the scaffolds with conventional and fluorescence microscopy. PMID:21860540
Zone compensated multilayer laue lens and apparatus and method of fabricating the same

Science.gov (United States)

Conley, Raymond P.; Liu, Chian Qian; Macrander, Albert T.; Yan, Hanfei; Maser, Jorg; Kang, Hyon Chol; Stephenson, Gregory Brian

2015-07-14

A multilayer Laue Lens includes a compensation layer formed in between a first multilayer section and a second multilayer section. Each of the first and second multilayer sections includes a plurality of alternating layers made of a pair of different materials. Also, the thickness of layers of the first multilayer section is monotonically increased so that a layer adjacent the substrate has a minimum thickness, and the thickness of layers of the second multilayer section is monotonically decreased so that a layer adjacent the compensation layer has a maximum thickness. In particular, the compensation layer of the multilayer Laue lens has an in-plane thickness gradient laterally offset by 90.degree. as compared to other layers in the first and second multilayer sections, thereby eliminating the strict requirement of the placement error.
Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

Directory of Open Access Journals (Sweden)

Chao-Chun Wang

2012-01-01

Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.
Multilayer Integrated Film Bulk Acoustic Resonators

CERN Document Server

Zhang, Yafei

2013-01-01

Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Education’s Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhang’s research group.
Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer

Directory of Open Access Journals (Sweden)

Gnilenko A. B.

2015-12-01

Full Text Available In spite of many efforts to propose new semiconductor materials and sophisticated constructions of solar cells, crystalline silicone remains the main photovoltaic material widely used up to now. There are various methods to enhance the efficiency of silicone solar cells. One of them is to combine silicone with an additional semiconductor material with the different bandgap to form a tandem construction. For example, the germanium sub-cell used as the bottom cascade for the silicone sub-cell in the tandem monolithic solar cell makes it possible to utilize the "red" sub-band of solar spectra increasing overall solar cell efficiency. The problem of the 4.2% mismatch in lattice constant between Si and Ge can be resolved in such a case by the use of SiGe buffer layer. In the paper the results of the computer simulation for Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer are presented. In the solar cell under consideration, the step graded Si1-xGex buffer layer is located between the top silicone and the bottom germanium cascades to reduce the threading dislocation density in mismatched materials. The cascades are commutated by the use of the germanium tunnel diode between the bottom sub-cell and the buffer layer. For the solar cell modeling, the physically-based device simulator ATLAS of Silvaco TCAD software is employed to predict the electrical behavior of the semiconductor structure and to provide a deep insight into the internal physical processes. The voltage-current characteristic, photovoltaic parameters and the distribution of basic physical values are obtained for the investigated tandem solar cell. The influence of layer thicknesses on the photovoltaic parameters is studied. The calculated efficiency of the tandem solar cell reaches 13% which is a quarter more than the efficiency of a simple silicone solar cell with the same constructive parameters and under the same illumination conditions.

Tunable drug loading and release from polypeptide multilayer nanofilms

Science.gov (United States)

Jiang, Bingbing; Li, Bingyun

2009-01-01

Polypeptide multilayer nanofilms were prepared using electrostatic layer-by-layer self-assembly nanotechnology. Small charged drug molecules (eg, cefazolin, gentamicin, and methylene blue) were loaded in polypeptide multilayer nanofilms. Their loading and release were found to be pH-dependent and could also be controlled by changing the number of film layers and drug incubation time, and applying heat-treatment after film formation. Antibioticloaded polypeptide multilayer nanofilms showed controllable antibacterial properties against Staphylococcus aureus. The developed biodegradable polypeptide multilayer nanofilms are capable of loading both positively- and negatively-charged drug molecules and promise to serve as drug delivery systems on biomedical devices for preventing biomedical device-associated infection, which is a significant clinical complication for both civilian and military patients. PMID:19421369
Magnons in ultrahigh vacuum deposited Fe/Ag multilayers

International Nuclear Information System (INIS)

El Kiadi, I.; Lassri, H.; Benkirane, K.; Bensassi, B.

2007-01-01

We have grown Fe/Ag multilayers with Ag buffer layer, by evaporation under UHV conditions on glass substrates. The magnetic properties of Fe/Ag multilayers are examined as a function of Fe layer thickness t Fe . The temperature dependence of the spontaneous magnetization M(T) is well described by a T 3/2 law in all multilayers. A spin-wave theory has been used to explain the temperature dependence of the magnetization and the approximate values for the bulk exchange interaction J b and surface exchange interaction J s for various Fe layer thicknesses have been obtained
Covalently attached multilayer assemblies of diazo-resins and binuclear cobalt phthalocyanines

International Nuclear Information System (INIS)

Li Xiaofang; Zhao Shuang; Yang Min; Sun Changqing; Guo, Liping

2005-01-01

By using the ionic self-assembly technique, ordered multilayer thin films composed of diazo-resin (DAR) as polycation and water-soluble binuclear cobalt phthalocyaninehexasulfonate (Bi-CoPc) as polyanion were alternately fabricated on quartz, CaF 2 and glassy carbon electrodes (GCEs). Upon ultraviolet irradiation, the adjacent interface of the multilayer films reacted to form a covalently cross-linking structure. The obtained thin films were characterized by ultraviolet (UV)-vis, Fourier transform infrared spectrometer (FTIR), X-ray diffraction (XRD), atomic force microscope (AFM), surface photovoltage spectra (SPS), and cyclic voltammetry. The results show that the uniform, highly stable and ordered multilayer thin films were formed. The linkage nature between the adjacent interface of the multilayer films converts from ionic to covalent, and, as a result, the stability of the multilayer thin films dramatically improved. The multilayer thin films on GCEs also exhibited excellent electrochemical behavior
Covalently attached multilayer assemblies of diazo-resins and binuclear cobalt phthalocyanines

Energy Technology Data Exchange (ETDEWEB)

Li Xiaofang [Key Lab of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130023 (China); Zhao Shuang [Key Lab of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130023 (China); Yang Min [Key Lab of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130023 (China); Sun Changqing [Key Lab of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130023 (China)]. E-mail: sunchq@mail.jlu.edu.cn; Guo, Liping [Department of Chemistry, Northeast Normal University, Changchun 130024 (China)

2005-05-01

By using the ionic self-assembly technique, ordered multilayer thin films composed of diazo-resin (DAR) as polycation and water-soluble binuclear cobalt phthalocyaninehexasulfonate (Bi-CoPc) as polyanion were alternately fabricated on quartz, CaF{sub 2} and glassy carbon electrodes (GCEs). Upon ultraviolet irradiation, the adjacent interface of the multilayer films reacted to form a covalently cross-linking structure. The obtained thin films were characterized by ultraviolet (UV)-vis, Fourier transform infrared spectrometer (FTIR), X-ray diffraction (XRD), atomic force microscope (AFM), surface photovoltage spectra (SPS), and cyclic voltammetry. The results show that the uniform, highly stable and ordered multilayer thin films were formed. The linkage nature between the adjacent interface of the multilayer films converts from ionic to covalent, and, as a result, the stability of the multilayer thin films dramatically improved. The multilayer thin films on GCEs also exhibited excellent electrochemical behavior.
Multilayer thin films: sequential assembly of nanocomposite materials

National Research Council Canada - National Science Library

Decher, Gero; Schlenoff, Joseph B

2003-01-01

... polymeric or nanoparticulate building blocks, understanding the polymer physical chemistry of multilayers, or characterizing their optical, electrical or biological activities. The reasons for the intense interest in the field are also clearly evident: multilayers bridge the gap between monolayers and spun-on or dip-coated films, ...
Design and performance of capping layers for extreme-ultraviolet multilayer mirrors

International Nuclear Information System (INIS)

Bajt, Sasa; Chapman, Henry N.; Nguyen, Nhan; Alameda, Jennifer; Robinson, Jeffrey C.; Malinowski, Michael; Gullikson, Eric; Aquila, Andrew; Tarrio, Charles; Grantham, Steven

2003-01-01

Multilayer lifetime has emerged as one of the major issues for the commercialization of extreme-ultraviolet lithography (EUVL). We describe the performance of an oxidation-resistant capping layer of Ru atop multilayers that results in a reflectivity above 69% at 13.2 nm, which is suitable for EUVL projection optics and has been tested with accelerated electron-beam and extreme-ultraviolet (EUV) light in a water-vapor environment. Based on accelerated exposure results, we calculated multilayer lifetimes for all reflective mirrors in a typical commercial EUVL tool and concluded that Ru-capped multilayers have ∼40x longer lifetimes than Si-capped multilayers, which translates to 3 months to many years, depending on the mirror dose
Magnetic damping phenomena in ferromagnetic thin-films and multilayers

Science.gov (United States)

Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

2017-11-01

Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.
Thermal-Insulation Properties of Multilayer Textile Packages

Directory of Open Access Journals (Sweden)

Matusiak Małgorzata

2014-12-01

Full Text Available Thermal-insulation properties of textile materials play a significant role in material engineering of protective clothing. Thermal-insulation properties are very important from the point of view of thermal comfort of the clothing user as well as the protective efficiency against low or high temperature. Thermal protective clothing usually is a multilayer construction. Its thermal insulation is a resultant of a number of layers and their order, as well as the thermalinsulation properties of a single textile material creating particular layers. The aim of the presented work was to investigate the relationships between the thermal-insulation properties of single materials and multilayer textile packages composed of these materials. Measurement of the thermal-insulation properties of single and multilayer textile materials has been performed with the Alambeta. The following properties have been investigated: thermal conductivity, resistance and absorptivity. Investigated textile packages were composed of two, three and four layers made of woven and knitted fabrics, as well as nonwovens. On the basis of the obtained results an analysis has been carried out in order to assess the dependency of the resultant values of the thermal-insulation properties of multilayer packages on the appropriate values of particular components.
Clustering multilayer omics data using MuNCut.

Science.gov (United States)

Teran Hidalgo, Sebastian J; Ma, Shuangge

2018-03-14

Omics profiling is now a routine component of biomedical studies. In the analysis of omics data, clustering is an essential step and serves multiple purposes including for example revealing the unknown functionalities of omics units, assisting dimension reduction in outcome model building, and others. In the most recent omics studies, a prominent trend is to conduct multilayer profiling, which collects multiple types of genetic, genomic, epigenetic and other measurements on the same subjects. In the literature, clustering methods tailored to multilayer omics data are still limited. Directly applying the existing clustering methods to multilayer omics data and clustering each layer first and then combing across layers are both "suboptimal" in that they do not accommodate the interconnections within layers and across layers in an informative way. In this study, we develop the MuNCut (Multilayer NCut) clustering approach. It is tailored to multilayer omics data and sufficiently accounts for both across- and within-layer connections. It is based on the novel NCut technique and also takes advantages of regularized sparse estimation. It has an intuitive formulation and is computationally very feasible. To facilitate implementation, we develop the function muncut in the R package NcutYX. Under a wide spectrum of simulation settings, it outperforms competitors. The analysis of TCGA (The Cancer Genome Atlas) data on breast cancer and cervical cancer shows that MuNCut generates biologically meaningful results which differ from those using the alternatives. We propose a more effective clustering analysis of multiple omics data. It provides a new venue for jointly analyzing genetic, genomic, epigenetic and other measurements.
75 FR 66126 - Multilayered Wood Flooring From China

Science.gov (United States)

2010-10-27

...)] Multilayered Wood Flooring From China AGENCY: United States International Trade Commission. ACTION: Institution... flooring, provided for in subheadings 4409.10, 4409.29, 4412.31, 4412.32, 4412.39, 4412.94, 4412.99, 4418... multilayered wood flooring. The following companies are members of the CAHP: Anderson Hardwood Floors, LLC...
Simulation of reflectivity spectrum for non-absorbing multilayer ...

Indian Academy of Sciences (India)

Reflectivity simulation is an essential tool for the design and optimization of optical thin ... with the experimental results of the multilayer optical thin films grown by electron-beam evaporation ... beam splitters [4] and various optical filters. ... thickness (QWOT) layer AR coating and multilayer HR coating using electron- beam ...
Photonic metasurface made of array of lens-like SiGe Mie resonators formed on (100) Si substrate via dewetting

Science.gov (United States)

Poborchii, Vladimir; Shklyaev, Alexander; Bolotov, Leonid; Uchida, Noriyuki; Tada, Tetsuya; Utegulov, Zhandos N.

2017-12-01

Metasurfaces consisting of arrays of high-index Mie resonators concentrating/redirecting light are important for integrated optics, photodetectors, and solar cells. Herein, we report the optical properties of low-Ge-content SiGe lens-like Mie resonator island arrays fabricated via dewetting during Ge deposition on a Si(100) surface at approximately 900 °C. We observe enhancement of the Si interaction with light owing to the efficient island-induced light concentration in the submicron-depth Si layer, which is mediated by both near-field Mie resonance leaking into the substrate and far-field light focusing. Such metasurfaces can improve the Si photodetector and solar-cell performance.
Reference Models for Multi-Layer Tissue Structures

Science.gov (United States)

2016-09-01

function of multi-layer tissues (etiology and management of pressure ulcers ). What was the impact on other disciplines? As part of the project, a data...simplification to develop cost -effective models of surface manipulation of multi-layer tissues. Deliverables. Specimen- (or subject) and region-specific...simplification to develop cost -effective models of surgical manipulation. Deliverables. Specimen-specific surrogate models of upper legs confirmed against data
Interface-engineered spin-dependent transport in perpendicular Co/Pt multilayers

Energy Technology Data Exchange (ETDEWEB)

Jiang, Shao-Long; Yang, Guang; Teng, Jiao, E-mail: tengjiao@mater.ustb.edu.cn; Guo, Qi-Xun; Li, Lei-Lei; Yu, Guang-Hua, E-mail: ghyu@mater.ustb.edu.cn

2016-11-30

Highlights: • The anomalous Hall effect in Co/Pt multilayers is studied. • Thermally stable AHE feature is obtained in [Pt/Co]{sub 3}/Ta/MgO multilayers. • Good thermal stability is due to enhanced side-jump and intrinsic contributions. - Abstract: The improvement of anomalous Hall effect (AHE) has been obtained through the introduction of a Ta metallic layer at the Co/MgO interface in perpendicular [Pt/Co]{sub 3}/MgO multilayers. It is exhibited that the saturation anomalous Hall resistivity is 42% larger than that in Co/Pt multilayers without Ta insertion. More meaningfully, thermally stable AHE feature is gained in perpendicular [Pt/Co]{sub 3}/Ta/MgO multilayers despite Co-Pt interdiffusion. The AHE is enhanced for sample [Pt/Co]{sub 3}/Ta/MgO after annealing, mainly due to the enhancement of the side-jump and intrinsic contributions.
Thermal boundary resistance at Si/Ge interfaces by molecular dynamics simulation

Directory of Open Access Journals (Sweden)

Tianzhuo Zhan

2015-04-01

Full Text Available In this study, we investigated the temperature dependence and size effect of the thermal boundary resistance at Si/Ge interfaces by non-equilibrium molecular dynamics (MD simulations using the direct method with the Stillinger-Weber potential. The simulations were performed at four temperatures for two simulation cells of different sizes. The resulting thermal boundary resistance decreased with increasing temperature. The thermal boundary resistance was smaller for the large cell than for the small cell. Furthermore, the MD-predicted values were lower than the diffusion mismatch model (DMM-predicted values. The phonon density of states (DOS was calculated for all the cases to examine the underlying nature of the temperature dependence and size effect of thermal boundary resistance. We found that the phonon DOS was modified in the interface regions. The phonon DOS better matched between Si and Ge in the interface region than in the bulk region. Furthermore, in interface Si, the population of low-frequency phonons was found to increase with increasing temperature and cell size. We suggest that the increasing population of low-frequency phonons increased the phonon transmission coefficient at the interface, leading to the temperature dependence and size effect on thermal boundary resistance.
Structural integrity of ceramic multilayer capacitor materials and ceramic multilayer capacitors

NARCIS (Netherlands)

With, de G.

1993-01-01

An review with 61 refs. is given of the fracture of and stress situation in ceramic capacitor materials and ceramic multilayer capacitors. A brief introduction to the relevant concepts is given first. Next the data for capacitor materials and the data for capacitors are discussed. The materials data
Optical measurement of thermal deformation of multilayer optics under synchrotron radiation

International Nuclear Information System (INIS)

Revesz, P.; Kazimirov, A.; Bazarov, I.

2007-01-01

An in situ optical technique to visualize surface distortions of the first monochromator crystal under synchrotron beam heat loading has been developed and applied to measure surface profiles of multilayer optics under white wiggler beam at the CHESS A2 beamline. Two identical multilayer structures deposited on Si and SiC substrates have been tested. Comparison of the reconstructed 3D heatbump profiles showed the surface distortions of the multilayer on SiC a factor of two smaller than the same multilayer on a Si substrate
Optical measurement of thermal deformation of multilayer optics under synchrotron radiation

Energy Technology Data Exchange (ETDEWEB)

Revesz, P. [Cornell University, CHESS, Ithaca, NY 14850 (United States)], E-mail: pr20@cornell.edu; Kazimirov, A.; Bazarov, I. [Cornell University, CHESS, Ithaca, NY 14850 (United States)

2007-11-11

An in situ optical technique to visualize surface distortions of the first monochromator crystal under synchrotron beam heat loading has been developed and applied to measure surface profiles of multilayer optics under white wiggler beam at the CHESS A2 beamline. Two identical multilayer structures deposited on Si and SiC substrates have been tested. Comparison of the reconstructed 3D heatbump profiles showed the surface distortions of the multilayer on SiC a factor of two smaller than the same multilayer on a Si substrate.
Phosphorus-based compounds for EUV multilayer optics materials

NARCIS (Netherlands)

Medvedev, Viacheslav; Yakshin, Andrey; van de Kruijs, Robbert Wilhelmus Elisabeth; Bijkerk, Frederik

2015-01-01

We have evaluated the prospects of phosphorus-based compounds in extreme ultraviolet multilayer optics. Boron phosphide (BP) is suggested to be used as a spacer material in reflective multilayer optics operating just above the L-photoabsorption edge of P (λ ≈9.2 nm). Mo, Ag, Ru, Rh, and Pd were
Gallic Acid as an Oxygen Scavenger in Bio-Based Multilayer Packaging Films.

Science.gov (United States)

Pant, Astrid F; Sängerlaub, Sven; Müller, Kajetan

2017-05-03

Oxygen scavengers are used in food packaging to protect oxygen-sensitive food products. A mixture of gallic acid (GA) and sodium carbonate was used as an oxygen scavenger (OSc) in bio-based multilayer packaging films produced in a three-step process: compounding, flat film extrusion, and lamination. We investigated the film surface color as well as oxygen absorption at different relative humidities (RHs) and temperatures, and compared the oxygen absorption of OSc powder, monolayer films, and multilayer films. The films were initially brownish-red in color but changed to greenish-black during oxygen absorption under humid conditions. We observed a maximum absorption capacity of 447 mg O₂/g GA at 21 °C and 100% RH. The incorporation of GA into a polymer matrix reduced the rate of oxygen absorption compared to the GA powder because the polymer acted as a barrier to oxygen and water vapor diffusion. As expected, the temperature had a significant effect on the initial absorption rate of the multilayer films; the corresponding activation energy was 75.4 kJ/mol. Higher RH significantly increased the oxygen absorption rate. These results demonstrate for the first time the production and the properties of a bio-based multilayer packaging film with GA as the oxygen scavenger. Potential applications include the packaging of food products with high water activity (a w > 0.86).

Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

International Nuclear Information System (INIS)

Kinoshita, K; Arai, Y; Inatomi, Y; Sakata, K; Takayanagi, M; Yoda, S; Miyata, H; Tanaka, R; Sone, T; Yoshikawa, J; Kihara, T; Shibayama, H; Kubota, Y; Shimaoka, T; Warashina, Y

2011-01-01

Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si 0.5 Ge 0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si 0.5 Ge 0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.
X-ray scattering in giant magneto-resistive multilayers

International Nuclear Information System (INIS)

Fulthorpe, B.D.

1999-01-01

The scattering mechanisms responsible for Giant Magneto-Resistance (GMR) in magnetic multilayers are believed to be related to many aspects of the multilayer structure. X-ray scattering techniques provide a powerful method with which to study the bulk and interface morphology in these systems, and are therefore crucial in developing an understanding of the dominant factors influencing the magnitude of the GMR. Reflectivity measurements performed on a series of Co/Cu multilayers, sputter deposited onto etched silicon, reveal no variation in the interface roughness with etching voltage, the thickness of the individual layers also remaining constant. The observed decrease in the GMR cannot, therefore, be attributed to variations in spacer thickness or interfacial spin-independent scattering. Electron and X-ray Diffraction measurements suggest the reduction in GMR is due to a loss of antiferromagnetic coupling associated with a transformation of the texture from a randomly oriented to well oriented (111) polycrystalline texture, and subsequent reduction in the volume fraction of (100) oriented grains. Interfaces within Co/Cu are found to propagate with a high degree of conformality with increasing bilayer number, with an out-of-plane correlation length well in excess of 300A. In contrast, the Co/Pt system exhibits a limiting out-of-plane correlation length of the order of 350A arising from a columnar growth mode. X-ray Reflectivity and Diffraction measurements provide' no structural interpretation for the 3-fold enhancement in the rate of increase of the saturation conductivity, as a function of spacer thickness, in Fe/Au (100) compared to Fe/Au (111), or why large oscillations in the GMR occur for the (100) orientation only. Such observations are, however, consistent with the existence of a channelling mechanism in Fe/Au (100). Grazing Incidence Fluorescence data indicates that Nb acts as a surfactant in Fe/Au (111) growth on sapphire. The influence of different
Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers

KAUST Repository

Zhang, Qiang; Li, Peng; Wen, Yan; He, Xin; Zhao, Yuelei; Zhang, Junli; Zhang, Xixiang

2017-01-01

, indicating that the dominant mechanism(s) of the AHE in these multilayers should be side-jump or/and intrinsic in nature. The new scaling relation ${{\\rho}_{\\text{AHE}}}=\\alpha {{\\rho}_{xx0}}+\\beta \\rho _{xx0}^{2}+b\\rho _{xx}^{2}$ (Tian et al 2009 Phys. Rev
Heteroepitaxial growth of strained multilayer thin films of high-temperature superconductors

International Nuclear Information System (INIS)

Gross, R.; Gupta, A.; Olsson, E.; Segmueller, A.; Koren, G.

1991-01-01

Recently, the heteroepitaxial growth of multilayer structures of different copper oxide superconductors has been reported by several groups. In general, two different types of multilayer structures should be distinguished. The first kind of mulitlayer is formed by high-T c materials having the same crystal structure and almost the same lattice constants, as for example ReBa 2 Cu 3 O 7 (Re=rare earth) multilayers with alternating Re-elements. In these multilayers the two different rare earth copper oxides (Y/Dy, Y/Pr) have the same orthorhombic unit cell. Due to the very similar lattice constants, the misfit strain is easily accommodated without the formation of defects. The second kind of multilayer is formed by layers of materials having different crystal structure and lattice parameters. In these multilayers the misfit can be coherently accommodated below a critical modulation thickness as discussed below. This renders possible the heteroepitaxial growth of strained multilayer structures, both of two copper oxides of different crystal structure, as has been demonstrated recently for the system YBa 2 Cu 3 O 7-δ /Nd 1.83 Ce 0.17 CuO x , and of superconducting copper oxides and insulating materials. For multilayers of different copper oxides, a combination of almost all high-Tc materials should be possible, since the presence of the CuO 2 sheets in these materials results in similar lattice constants in their basal planes ('a' and 'b'). (orig./BHO)
76 FR 76435 - Multilayered Wood Flooring From China

Science.gov (United States)

2011-12-07

...)] Multilayered Wood Flooring From China Determinations On the basis of the record \\1\\ developed in the subject... multilayered wood flooring, provided for in subheadings 4409.10, 4409.29, 4412.31, 4412.32, 4412.39, 4412.94... flooring. The following companies are members of the CAHP: Anderson Hardwood Floors, LLC, Fountain Inn, SC...
Some issues related to polarized radiative transfer in a multilayer medium with a changing index of refraction

International Nuclear Information System (INIS)

Garcia, R D M

2012-01-01

A couple of issues raised in a recent work on Fresnel boundary and interface conditions for polarized radiative transfer are discussed. The first issue concerns a normalization that has to be performed on the transmission matrix relating the transmitted and incident Stokes vectors at a smooth interface between different materials. It was found that the normalization step is not performed in a correct way in many existing works and so the effects of the two most frequent discrepancies encountered in these works are evaluated for a simple model of an atmosphere-water system. The second issue has to do with a choice of the sign of the parallel component of the amplitude coefficient of reflection R l when constructing the reflection matrix that relates the reflected and incident Stokes vectors at a smooth interface. A computational approach based on the limit to the case with constant index of refraction is used to determine the appropriate sign of R l for polarized radiative transfer calculations in multilayers with different indices of refraction.
Magnetic studies of spin wave excitations in Ni/Au multilayers

International Nuclear Information System (INIS)

Salhi, H.; Chafai, K.; Benkirane, K.; Lassri, H.; Abid, M.; Hlil, E.K.

2010-01-01

Ni/Au multilayers were prepared by the electron beam evaporation method under ultra high vacuum conditions. The multilayer films have a coherent structure with (1 1 1) texture. The magnetic properties of Ni/Au multilayers are examined as a function of Ni layer thickness t Ni . The temperature dependence of the spontaneous magnetization M(T) is well described by a T 3/2 law in all multilayers. A spin wave theory has been used to explain the magnetization versus temperature. Based on this theory, the approximate values for the bulk exchange interaction J b , surface exchange interaction J S and the interlayer coupling strength J I have been obtained for various Ni layer thicknesses.
Environmental responsiveness of polygalacturonic acid-based multilayers to variation of pH.

Science.gov (United States)

Westwood, Marta; Noel, Timothy R; Parker, Roger

2011-02-14

The effect of pH on the stability of layer-by-layer deposited polygalacturonic acid (PGalA)-based multilayer films prepared with the polycations poly-L-lysine, chitosan, and lysozyme is studied. The response was characterized using a quartz crystal microbalance, dual polarization interferometry, and Fourier transform infrared spectroscopy which probe multilayer thickness, density, polymer mass (composition and speciation), and hydration. All multilayers showed irreversible changes in response to pH change becoming thinner due to the partial disassembly. Preferential loss of the polycation (50-80% w/w) and relative small losses of PGaLA (10-35% w/w) occurred. The charge density on the polycation has a strong influence on the response to the acid cycle. Most of the disassembly takes place at the pH lower that pK(a) of PGaLA, indicating that this factor was crucial in determining the stability of the films. The pH challenge also revealed a polycation-dependent shift to acid pH in the PGaLA pK(a).
Advanced single-wafer sequential multiprocessing techniques for semiconductor device fabrication

International Nuclear Information System (INIS)

Moslehi, M.M.; Davis, C.

1989-01-01

Single-wafer integrated in-situ multiprocessing (SWIM) is recognized as the future trend for advanced microelectronics production in flexible fast turn- around computer-integrated semiconductor manufacturing environments. The SWIM equipment technology and processing methodology offer enhanced equipment utilization, improved process reproducibility and yield, and reduced chip manufacturing cost. They also provide significant capabilities for fabrication of new and improved device structures. This paper describes the SWIM techniques and presents a novel single-wafer advanced vacuum multiprocessing technology developed based on the use of multiple process energy/activation sources (lamp heating and remote microwave plasma) for multilayer epitaxial and polycrystalline semiconductor as well as dielectric film processing. Based on this technology, multilayer in-situ-doped homoepitaxial silicon and heteroepitaxial strained layer Si/Ge x Si 1 - x /Si structures have been grown and characterized. The process control and the ultimate interfacial abruptness of the layer-to-layer transition widths in the device structures prepared by this technology will challenge the MBE techniques in multilayer epitaxial growth applications
Multilayer Cloud Detection with the MODIS Near-Infrared Water Vapor Absorption Band

Science.gov (United States)

Wind, Galina; Platnick, Steven; King, Michael D.; Hubanks, Paul A,; Pavolonis, Michael J.; Heidinger, Andrew K.; Yang, Ping; Baum, Bryan A.

2009-01-01

Data Collection 5 processing for the Moderate Resolution Imaging Spectroradiometer (MODIS) onboard the NASA Earth Observing System EOS Terra and Aqua spacecraft includes an algorithm for detecting multilayered clouds in daytime. The main objective of this algorithm is to detect multilayered cloud scenes, specifically optically thin ice cloud overlying a lower-level water cloud, that presents difficulties for retrieving cloud effective radius using single layer plane-parallel cloud models. The algorithm uses the MODIS 0.94 micron water vapor band along with CO2 bands to obtain two above-cloud precipitable water retrievals, the difference of which, in conjunction with additional tests, provides a map of where multilayered clouds might potentially exist. The presence of a multilayered cloud results in a large difference in retrievals of above-cloud properties between the CO2 and the 0.94 micron methods. In this paper the MODIS multilayered cloud algorithm is described, results of using the algorithm over example scenes are shown, and global statistics for multilayered clouds as observed by MODIS are discussed. A theoretical study of the algorithm behavior for simulated multilayered clouds is also given. Results are compared to two other comparable passive imager methods. A set of standard cloudy atmospheric profiles developed during the course of this investigation is also presented. The results lead to the conclusion that the MODIS multilayer cloud detection algorithm has some skill in identifying multilayered clouds with different thermodynamic phases
Characterization of Mo/Si multilayer growth on stepped topographies

NARCIS (Netherlands)

van den Boogaard, Toine; Louis, Eric; Zoethout, E.; Goldberg, K.A.; Bijkerk, Frederik

2011-01-01

Mo/Si multilayer mirrors with nanoscale bilayer thicknesses have been deposited on stepped substrate topographies, using various deposition angles. The multilayer morphology at the step-edge region was studied by cross section transmission electron microscopy. A transition from a continuous- to
A MULTILAYER BIOCHEMICAL DRY DEPOSITION MODEL 1. MODEL FORMULATION

Science.gov (United States)

A multilayer biochemical dry deposition model has been developed based on the NOAA Multilayer Model (MLM) to study gaseous exchanges between the soil, plants, and the atmosphere. Most of the parameterizations and submodels have been updated or replaced. The numerical integration ...
Hot-rolled Process of Multilayered Composite Metal Plate

Directory of Open Access Journals (Sweden)

YU Wei

2017-02-01

Full Text Available For multi-layer plate, it is a difficult problem to increase product yield rate and improve bonding interface quality. A high yield hot-rolled method of multilayered plate was proposed. The raw strips and plate were fixed by argon arc welding. The combined billet was put into a metal box and vacuum pumped, and then heated and rolled by multi passes at the temperature of 1000-1200℃. The 67 layered plate with the thickness of 2.5mm was successfully produced. The interfacial microstructures and diffusion behavior were investigated and analyzed by optical microscopy and scan electronic microscopy. The tensile and shear strength were tested,and the shear fractures were analyzed. The results show that the multilayered plate yield rate is more than 90% by two steps billet combination method and rolling process optimization. The good bonding interface quality is obtained, the shear strength of multilayered plate reaches 241 MPa. Nickel interlayer between 9Cr18 and 1Cr17 can not only prevent the diffusion of carbon, but also improve the microstructure characteristics.
Tunable photonic multilayer sensors from photo-crosslinkable polymers

Science.gov (United States)

Chiappelli, Maria; Hayward, Ryan

2014-03-01

The fabrication of tunable photonic multilayer sensors from stimuli-responsive, photo-crosslinkable polymers will be described. Benzophenone is covalently incorporated as a pendent photo-crosslinker, allowing for facile preparation of multilayer films by sequential spin-coating and crosslinking processes. Copolymer chemistries and layer thicknesses are selected to provide robust multilayer sensors which can show color changes across nearly the full visible spectrum due to the specific stimulus-responsive nature of the hydrated film stack. We will describe how this approach is extended to alternative sensor designs by tailoring the thickness and chemistry of each layer independently, allowing for the preparation of sensors which depend not only on the shift in wavelength of a reflectance peak, but also on the transition between Bragg mirrors and filters. Device design is optimized by photo-patterning sensor arrays on a single substrate, providing more efficient fabrication time as well as multi-functional sensors. Finally, radiation-sensitive multilayers, designed by choosing polymers which will preferentially degrade or crosslink under ionizing radiation, will also be described.
Young’s modulus of multi-layer microcantilevers

Directory of Open Access Journals (Sweden)

Zhikang Deng

2017-12-01

Full Text Available A theoretical model for calculating the Young’s modulus of multi-layer microcantilevers with a coating is proposed, and validated by a three-dimensional (3D finite element (FE model using ANSYS parametric design language (APDL and atomic force microscopy (AFM characterization. Compared with typical theoretical models (Rayleigh-Ritz model, Euler-Bernoulli (E-B beam model and spring mass model, the proposed theoretical model can obtain Young’s modulus of multi-layer microcantilevers more precisely. Also, the influences of coating’s geometric dimensions on Young’s modulus and resonant frequency of microcantilevers are discussed. The thickness of coating has a great influence on Young’s modulus and resonant frequency of multi-layer microcantilevers, and the coating should be considered to calculate Young’s modulus more precisely, especially when fairly thicker coating is employed.
Experimental analysis on stress wave in inhomogeneous multi-layered structures

International Nuclear Information System (INIS)

Cho, Yun Ho; Ham, Hyo Sick

1998-01-01

The guided wave propagation in inhomogeneous multi-layered structures is experimentally explored based on theoretical dispersion curves. It turns out that proper selection of incident angle and frequency is critical for guided wave generation in multi-layered structures. Theoretical dispersion curves greatly depend on adhesive zone thickness, layer thickness and material properties. It was possible to determine the adhesive zone thickness of an inhomogeneous multi-layered structure by monitoring experimentally the change of dispersion curves.
Thermally induced delamination of multilayers

DEFF Research Database (Denmark)

Sørensen, Bent F.; Sarraute, S.; Jørgensen, O.

1998-01-01

Steady-state delamination of multilayered structures, caused by stresses arising during processing due to thermal expansion mismatch, is analyzed by a fracture mechanics model based on laminate theory. It is found that inserting just a few interlayers with intermediate thermal expansion coefficie...... coefficients may be an effective way of reducing the delamination energy release rate. Uneven layer thickness and increasing elastic mismatch are shown to raise the energy release rate. Experimental work confirms important trends of the model.......Steady-state delamination of multilayered structures, caused by stresses arising during processing due to thermal expansion mismatch, is analyzed by a fracture mechanics model based on laminate theory. It is found that inserting just a few interlayers with intermediate thermal expansion...
Ultrahard Multilayer Coatings

International Nuclear Information System (INIS)

Chrzan, D.C.; Dugger, M.; Follstaedt, D.M.; Friedman, Lawrence H.; Friedmann, T.A.; Knapp, J.A.; McCarty, K.F.; Medlin, D.L.; Mirkarimi, P.B.; Missert, N.; Newcomer, P.P.; Sullivan, J.P.; Tallant, D.R.

1999-01-01

We have developed a new multilayer a-tC material that is thick stress-free, adherent, low friction, and with hardness and stiffness near that of diamond. The new a-tC material is deposited by J pulsed-laser deposition (PLD) at room temperature, and fully stress-relieved by a short thermal anneal at 600 ampersand deg;C. A thick multilayer is built up by repeated deposition and annealing steps. We measured 88 GPa hardness, 1100 GPa Young's modulus, and 0.1 friction coefficient (under high load). Significantly, these results are all well within the range reported for crystalline diamond. In fact, this material, if considered separate from crystalline diamond, is the 2nd hardest material known to man. Stress-free a-tC also has important advantages over thin film diamond; namely, it is smooth, processed at lower temperature, and can be grown on a much broader range of substrates. This breakthrough will enable a host of applications that we are actively pursuing in MEMs, sensors, LIGA, etc
Multilayered sulphonated polysulfone/silica composite membranes for fuel cell applications

International Nuclear Information System (INIS)

Padmavathi, Rajangam; Karthikumar, Rajendhiran; Sangeetha, Dharmalingam

2012-01-01

Highlights: ► Multilayered membranes were fabricated with SPSu. ► Aminated polysulfone and silica were used as the layers in order to prevent the crossover of methanol. ► The methanol permeability and selectivity ratio proved a strong influence on DMFC application. ► The suitability of the multilayered membranes was studied in the lab made set-ups of PEMFC and DMFC. - Abstract: Polymer electrolyte membranes used in proton exchange membrane fuel cell (PEMFC) and direct methanol fuel cell (DMFC) suffer from low dimensional stability. Hence multilayered membranes using sulfonated polysulfone (SPSu) and silica (SiO 2 ) were fabricated to alter such properties. The introduction of an SiO 2 layer between two layers of SPSu to form the multilayered composite membrane enhanced its dimensional stability, but slightly lowered its proton conductivity when compared to the conventional SPSu/SiO 2 composite membrane. Additionally, higher water absorption, lower methanol permeability and higher flame retardancy were also observed in this newly fabricated multilayered membrane. The performance evaluation of the 2 wt% SiO 2 loaded multilayered membrane in DMFC showed a maximum power density of 86.25 mW cm −2 , which was higher than that obtained for Nafion 117 membrane (52.8 mW cm −2 ) in the same single cell test assembly. Hence, due to the enhanced dimensional stability, reduced methanol permeability and higher maximum power density, the SPSu/SiO 2 /SPSu multilayered membrane can be a viable and a promising candidate for use as an electrolyte membrane in DMFC applications, when compared to Nafion.
AFFORDABLE MULTI-LAYER CERAMIC (MLC) MANUFACTURING FOR POWER SYSTEMS (AMPS)

Energy Technology Data Exchange (ETDEWEB)

E.A. Barringer, Ph.D.

2002-11-27

McDermott Technology, Inc. (MTI) is attempting to develop high-performance, cost-competitive solid oxide fuel cell (SOFC) power systems. Recognizing the challenges and limitations facing the development of SOFC stacks comprised of electrode-supported cells and metallic interconnects, McDermott Technology, Inc. (MTI) has chosen to pursue an alternate path to commercialization. MTI is developing a multi-layer, co-fired, planar SOFC stack that will provide superior performance and reliability at reduced costs relative to competing designs. The MTI approach combines state-of-the-art SOFC materials with the manufacturing technology and infrastructure established for multi-layer ceramic (MLC) packages for the microelectronics industry. The rationale for using MLC packaging technology is that high quality, low-cost manufacturing has been demonstrated at high volumes. With the proper selection of SOFC materials, implementation of MLC fabrication methods offers unique designs for stacks (cells and interconnects) that are not possible through traditional fabrication methods. The MTI approach eliminates use of metal interconnects and ceramic-metal seals, which are primary sources of stack performance degradation. Co-fired cells are less susceptible to thermal cycling stresses by using material compositions that have closely matched coefficients of thermal expansion between the cell and the interconnect. The development of this SOFC stack technology was initiated in October 1999 under the DOE cosponsored program entitled ''Affordable Multi-layer Ceramic Manufacturing for Power Systems (AMPS)''. The AMPS Program was conducted as a two-phase program: Phase I--Feasibility Assessment (10/99--9/00); and Phase II--Process Development for Co-fired Stacks (10/00-3/02). This report provides a summary of the results from Phase I and a more detailed review of the results for Phase II. Phase I demonstrated the feasibility for fabricating multi-layer, co-fired cells and

Characterization of the morphology of co-extruded, thermoplastic/rubber multi-layer tapes

International Nuclear Information System (INIS)

L'Abee, R.M.A.; Vissers, A.M.J.T.; Goossens, J.G.P.; Spoelstra, A.B.; Duin, M. van

2009-01-01

Tapes with alternating semi-crystalline thermoplastic/rubber layers with thicknesses varying from 100 nm up to several μm were prepared by multi-layer co-extrusion. The variation in layer thickness was obtained by varying the thermoplastic/rubber feed ratio. A systematic study on the use of various microscopy techniques to visualize the morphology of the layered systems is presented. The relatively large length scales and the sample preparation make optical microscopy (OM) unsuitable to study the morphology of the multi-layer tapes. Although excellent contrast between the thermoplastic and rubber layers can be obtained, the usually applied, relatively large magnifications limit the use of transmission electron microscopy (TEM) and atomic force microscopy (AFM) to small sample areas. The large range of applicable magnifications makes scanning electron microscopy (SEM) the most suitable technique to study the morphology of the multi-layer tapes. The sample preparation for SEM with a secondary electron (SE) detector is often based on the removal of one of the components, which may induce changes in the morphology. SEM with a back-scattered electron (BSE) detector is a very convenient method to study the morphology over a wide range of length scales, where the contrast between the different layers can be enhanced by chemical staining. Finally, the nucleation behavior (homogeneous versus heterogeneous) of the semi-crystalline layers, as probed by differential scanning calorimetry (DSC), provides valuable information on the layered morphology. The use of relatively straightforward DSC measurements shows a clear advantage with respect to the discussed microscopy techniques, since no sample preparation is required and relatively large samples can be studied, which are more representative for the bulk.
Conducting polymer-based multilayer films for instructive biomaterial coatings

OpenAIRE

Hardy, John G; Li, Hetian; Chow, Jacqueline K; Geissler, Sydney A; McElroy, Austin B; Nguy, Lindsey; Hernandez, Derek S; Schmidt, Christine E

2015-01-01

Aim: To demonstrate the design, fabrication and testing of conformable conducting biomaterials that encourage cell alignment. Materials & methods: Thin conducting composite biomaterials based on multilayer films of poly (3,4-ethylenedioxythiophene) derivatives, chitosan and gelatin were prepared in a layer-by-layer fashion. Fibroblasts were observed with fluorescence microscopy and their alignment (relative to the dipping direction and direction of electrical current passed through the films)...
The multilayer nanoparticles formed by layer by layer approach for cancer-targeting therapy.

Science.gov (United States)

Oh, Keun Sang; Lee, Hwanbum; Kim, Jae Yeon; Koo, Eun Jin; Lee, Eun Hee; Park, Jae Hyung; Kim, Sang Yoon; Kim, Kwangmeyung; Kwon, Ick Chan; Yuk, Soon Hong

2013-01-10

The multilayer nanoparticles (NPs) were prepared for cancer-targeting therapy using the layer by layer approach. When drug-loaded Pluronic NPs were mixed with vesicles (liposomes) in the aqueous medium, Pluronic NPs were incorporated into the vesicles to form the vesicle NPs. Then, the multilayer NPs were formed by freeze-drying the vesicle NPs in a Pluronic aqueous solution. The morphology and size distribution of the multilayer NPs were observed using a TEM and a particle size analyzer. In order to apply the multilayer NPs as a delivery system for docetaxel (DTX), which is a model anticancer drug, the release pattern of the DTX was observed and the tumor growth was monitored by injecting the multilayer NPs into the tail veins of tumor (squamous cell carcinoma)-bearing mice. The cytotoxicity of free DTX (commercial DTX formulation (Taxotere®)) and the multilayer NPs was evaluated using MTT assay. We also evaluated the tumor targeting ability of the multilayer NPs using magnetic resonance imaging. The multilayer NPs showed excellent tumor targetability and antitumor efficacy in tumor-bearing mice, caused by the enhanced permeation and retention (EPR) effect. These results suggest that the multilayer NPs could be a potential drug delivery system for cancer-targeting therapy. Copyright © 2012 Elsevier B.V. All rights reserved.
Magnetotransport and magnetization reversal of electrodeposited multilayer nanowires

Science.gov (United States)

Tang, Xueti

2007-12-01

Electrodeposited magnetic multilayer nanowires are ideal materials to study nanoscale magnetism and the giant magnetoresistance (GMR) in the current-perpendicular-to-plane (CPP) geometry. This is because the diameter of each nanowire is uniform, the surface of the nanowire is smooth, and the thickness of both the magnetic and non-magnetic layers can be varied to either larger or smaller than the spin diffusion length which is an important parameter in magnetotransport study. In addition, the aspect ratio (layer-thickness/diameter) that is related to shape anisotropy can be varied for magnetization reversal study. There has been little understanding in the magnetization reversal mechanism of multilayer nanowires, which is complicated due to the dipolar interactions between magnetic layers in each nanowire and between nanowires. The objective of this work is to study the magnetization reversal mechanism of multilayer nanowires using a vibrating sample magnetometer (VSM), where various dipolar interactions are taken into account. Although multilayer nanowires are ideal for the study of the CPP-GMR effect, there remains technical difficulty in making an electrical contact with individual nanowires for the CPP-GMR measurements. In this work, a point-contact method using a conductive plunger tip was developed in-house, that enabled us to measure the CPP-GMR of selected multilayer nanowires in an array of vertically aligned nanowires in each sample. To examine the CPP-GMR and compare the results with theoretical models, the CPP-GMR data were systematically obtained from samples with various magnetic and non-magnetic layer thicknesses. It was found from VSM measurement that the magnetization reversal mode in electrodeposited CoNi/Cu multilayer nanowires depends on the shape and thickness of the CoNi layers where the mode in rod-shaped thick CoNi layers is different from that in disk-shaped thin CoNi layers. The reversal mode in coherent rotation or curling was determined
Hot-electrons-induced ultrafast demagnitization in Co/Pt multilayers

NARCIS (Netherlands)

Bergeard, N.; Hehn, M.; Mangin, S.; Lengaigne, G.; Montaigne, F.; Lalieu, M. L. M.; Koopmans, B.; Malinowski, G.

2016-01-01

Using specially engineered structures to tailor the optical absorption in a metallic multilayer, we analyze the magnetization dynamics of a Co/Pt multilayer buried below a thick Cu layer. We demonstrate that hot electrons alone can very efficiently induce ultrafast demagnetization. Simulations based
Giant magnetoresistance of hysteresis-free Cu/Co-based multilayers

International Nuclear Information System (INIS)

Huetten, A.; Hempel, T.; Schepper, W.; Kleineberg, U.; Reiss, G.

2001-01-01

It has been demonstrated that hysteresis-free multilayers based on {Cu/Co} and {Cu/Ni 57 Co 43 } can be experimentally realized obtaining room temperature GMR effect amplitudes from 6.5% up to 20%. A critical window for the layer thickness for hysteresis-free GMR curves can be achieved for both systems, ranging from 0.38 to 0.45 nm and 0.59 to 0.7 nm, respectively. The corresponding sensitivities range from 0.075 up to 0.114%/Oe, but are still below that of normal {Cu/Co} multilayers. Hysteresis-free multilayers based on these systems are stable up to 180 deg. C upon isochronal annealing. It is shown that hysteresis-free {Cu/Co or Ni 57 Co 43 }-multilayers are neither a solution to achieve good temperature stability nor a higher sensitivity compared with normal ones and hence are not candidates for application
Self-assembled metal nano-multilayered film prepared by co-sputtering method

Science.gov (United States)

Xie, Tianle; Fu, Licai; Qin, Wen; Zhu, Jiajun; Yang, Wulin; Li, Deyi; Zhou, Lingping

2018-03-01

Nano-multilayered film is usually prepared by the arrangement deposition of different materials. In this paper, a self-assembled nano-multilayered film was deposited by simultaneous sputtering of Cu and W. The Cu/W nano-multilayered film was accumulated by W-rich layer and Cu-rich layer. Smooth interfaces with consecutive composition variation and semi-coherent even coherent relationship were identified, indicating that a spinodal-like structure with a modulation wavelength of about 20 nm formed during co-deposition process. The participation of diffusion barrier element, such as W, is believed the essential to obtain the nano-multilayered structure besides the technological parameters.
Analytic theory of alternate multilayer gratings operating in single-order regime.

Science.gov (United States)

Yang, Xiaowei; Kozhevnikov, Igor V; Huang, Qiushi; Wang, Hongchang; Hand, Matthew; Sawhney, Kawal; Wang, Zhanshan

2017-07-10

Using the coupled wave approach (CWA), we introduce the analytical theory for alternate multilayer grating (AMG) operating in the single-order regime, in which only one diffraction order is excited. Differing from previous study analogizing AMG to crystals, we conclude that symmetrical structure, or equal thickness of the two multilayer materials, is not the optimal design for AMG and may result in significant reduction in diffraction efficiency. The peculiarities of AMG compared with other multilayer gratings are analyzed. An influence of multilayer structure materials on diffraction efficiency is considered. The validity conditions of analytical theory are also discussed.
A microdot multilayer oxide device: let us tune the strain-ionic transport interaction.

Science.gov (United States)

Schweiger, Sebastian; Kubicek, Markus; Messerschmitt, Felix; Murer, Christoph; Rupp, Jennifer L M

2014-05-27

In this paper, we present a strategy to use interfacial strain in multilayer heterostructures to tune their resistive response and ionic transport as active component in an oxide-based multilayer microdot device on chip. For this, fabrication of strained multilayer microdot devices with sideways attached electrodes is reported with the material system Gd0.1Ce0.9O(2-δ)/Er2O3. The fast ionic conducting Gd0.1Ce0.9O(2-δ) single layers are altered in lattice strain by the electrically insulating erbia phases of a microdot. The strain activated volume of the Gd0.1Ce0.9O(2-δ) is investigated by changing the number of individual layers from 1 to 60 while keeping the microdot at a constant thickness; i.e., the proportion of strained volume was systematically varied. Electrical measurements showed that the activation energy of the devices could be altered by Δ0.31 eV by changing the compressive strain of a microdot ceria-based phase by more than 1.16%. The electrical conductivity data is analyzed and interpreted with a strain volume model and defect thermodynamics. Additionally, an equivalent circuit model is presented for sideways contacted multilayer microdots. We give a proof-of-concept for microdot contacting to capture real strain-ionic transport effects and reveal that for classic top-electrode contacting the effect is nil, highlighting the need for sideways electric contacting on a nanoscopic scale. The near order ionic transport interaction is supported by Raman spectroscopy measurements. These were conducted and analyzed together with fully relaxed single thin film samples. Strain states are described relative to the strain activated volumes of Gd0.1Ce0.9O(2-δ) in the microdot multilayer. These findings reveal that strain engineering in microfabricated devices allows altering the ionic conduction over a wide range beyond classic doping strategies for single films. The reported fabrication route and concept of strained multilayer microdots is a promising path
Multilayer porous UHMWPE scaffolds for bone defects replacement

International Nuclear Information System (INIS)

Maksimkin, A.V.; Senatov, F.S.; Anisimova, N.Yu.; Kiselevskiy, M.V.; Zalepugin, D.Yu.; Chernyshova, I.V.; Tilkunova, N.A.; Kaloshkin, S.D.

2017-01-01

Reconstruction of the structural integrity of the damaged bone tissue is an urgent problem. UHMWPE may be potentially used for the manufacture of porous implants simulating as closely as possible the porous cancellous bone tissue. But the extremely high molecular weight of the polymer does not allow using traditional methods of foaming. Porous and multilayer UHMWPE scaffolds with nonporous bulk layer and porous layer that mimics cancellous bone architecture were obtained by solid-state mixing, thermopressing and washing in subcritical water. Structural and mechanical properties of the samples were studied. Porous UHMWPE samples were also studied in vitro and in vivo. The pores of UHMWPE scaffold are open and interconnected. Volume porosity of the obtained samples was 79 ± 2%; the pore size range was 80–700 μm. Strong connection of the two layers in multilayer UHMWPE scaffolds was observed with decreased number of fusion defects. Functionality of implants based on multilayer UHMWPE scaffolds is provided by the fixation of scaffolds in the bone defect through ingrowths of the connective tissue into the pores, which ensures the maintenance of the animals' mobility - Highlights: • Porous UHMWPE scaffold mimics cancellous bone architecture, maintaining its flexibility. • Multilayer UHMWPE scaffold is able to simulate different types of bone tissue. • Fixation of scaffolds in the bone provides through ingrowths of the connective tissue into pores. • Multilayer UHMWPE scaffolds can be used for the formation of bone implants.
Multilayer porous UHMWPE scaffolds for bone defects replacement

Energy Technology Data Exchange (ETDEWEB)

Maksimkin, A.V. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Senatov, F.S., E-mail: senatov@misis.ru [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Anisimova, N.Yu.; Kiselevskiy, M.V. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); N.N. Blokhin Russian Cancer Research Center, Moscow (Russian Federation); Zalepugin, D.Yu.; Chernyshova, I.V.; Tilkunova, N.A. [State Plant of Medicinal Drugs, Moscow (Russian Federation); Kaloshkin, S.D. [National University of Science and Technology “MISIS”, Moscow (Russian Federation)

2017-04-01

Reconstruction of the structural integrity of the damaged bone tissue is an urgent problem. UHMWPE may be potentially used for the manufacture of porous implants simulating as closely as possible the porous cancellous bone tissue. But the extremely high molecular weight of the polymer does not allow using traditional methods of foaming. Porous and multilayer UHMWPE scaffolds with nonporous bulk layer and porous layer that mimics cancellous bone architecture were obtained by solid-state mixing, thermopressing and washing in subcritical water. Structural and mechanical properties of the samples were studied. Porous UHMWPE samples were also studied in vitro and in vivo. The pores of UHMWPE scaffold are open and interconnected. Volume porosity of the obtained samples was 79 ± 2%; the pore size range was 80–700 μm. Strong connection of the two layers in multilayer UHMWPE scaffolds was observed with decreased number of fusion defects. Functionality of implants based on multilayer UHMWPE scaffolds is provided by the fixation of scaffolds in the bone defect through ingrowths of the connective tissue into the pores, which ensures the maintenance of the animals' mobility - Highlights: • Porous UHMWPE scaffold mimics cancellous bone architecture, maintaining its flexibility. • Multilayer UHMWPE scaffold is able to simulate different types of bone tissue. • Fixation of scaffolds in the bone provides through ingrowths of the connective tissue into pores. • Multilayer UHMWPE scaffolds can be used for the formation of bone implants.
Elastic properties of suspended multilayer WSe{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Zhang, Rui, E-mail: rui.zhang@ed.ac.uk; Cheung, Rebecca [Scottish Microelectronics Centre, Alexander Crum Brown Road, The University of Edinburgh, King' s Buildings, Edinburgh EH9 3FF (United Kingdom); Koutsos, Vasileios [Institute for Materials and Processes, School of Engineering, The University of Edinburgh, King' s Buildings, Edinburgh EH9 3FB (United Kingdom)

2016-01-25

We report the experimental determination of the elastic properties of suspended multilayer WSe{sub 2}, a promising two-dimensional (2D) semiconducting material combined with high optical quality. The suspended WSe{sub 2} membranes have been fabricated by mechanical exfoliation of bulk WSe{sub 2} and transfer of the exfoliated multilayer WSe{sub 2} flakes onto SiO{sub 2}/Si substrates pre-patterned with hole arrays. Then, indentation experiments have been performed on these membranes with an atomic force microscope. The results show that the 2D elastic modulus of the multilayer WSe{sub 2} membranes increases linearly while the prestress decreases linearly as the number of layers increases. The interlayer interaction in WSe{sub 2} has been observed to be strong enough to prevent the interlayer sliding during the indentation experiments. The Young's modulus of multilayer WSe{sub 2} (167.3 ± 6.7 GPa) is statistically independent of the thickness of the membranes, whose value is about two thirds of other most investigated 2D semiconducting transition metal dichalcogenides, namely, MoS{sub 2} and WS{sub 2}. Moreover, the multilayer WSe{sub 2} can endure ∼12.4 GPa stress and ∼7.3% strain without fracture or mechanical degradation. The 2D WSe{sub 2} can be an attractive semiconducting material for application in flexible optoelectronic devices and nano-electromechanical systems.
Layer-by-layer strippable Ag multilayer films fabricated by modular assembly.

Science.gov (United States)

Li, Yan; Chen, Xiaoyan; Li, Qianqian; Song, Kai; Wang, Shihui; Chen, Xiaoyan; Zhang, Kai; Fu, Yu; Jiao, Yong-Hua; Sun, Ting; Liu, Fu-Chun; Han, En-Hou

2014-01-21

We have developed a new method to fabricate multilayer films, which uses prepared thin films as modular blocks and transfer as operation mode to build up multilayer structures. In order to distinguish it from the in situ fabrication manner, this method is called modular assembly in this study. On the basis of such concept, we have fabricated a multilayer film using the silver mirror film as the modular block and poly(lactic acid) as the transfer tool. Due to the special double-layer structure of the silver mirror film, the resulting multilayer film had a well-defined stratified architecture with alternate porous/compact layers. As a consequence of the distinct structure, the interaction between the adjacent layers was so weak that the multilayer film could be layer-by-layer stripped. In addition, the top layer in the film could provide an effective protection on the morphology and surface property of the underlying layers. This suggests that if the surface of the film was deteriorated, the top layer could be peeled off and the freshly exposed surface would still maintain the original function. The successful preparation of the layer-by-layer strippable silver multilayer demonstrates that modular assembly is a feasible and effective method to build up multilayer films capable of creating novel and attractive micro/nanostructures, having great potential in the fabrication of nanodevices and coatings.
Swift heavy ion irradiation effects in Pt/C and Ni/C multilayers

Science.gov (United States)

Gupta, Ajay; Pandita, Suneel; Avasthi, D. K.; Lodha, G. S.; Nandedkar, R. V.

1998-12-01

Irradiation effects of 100 MeV Ag ion irradiation on Ni/C and Pt/C multilayers have been studied using X-ray reflectivity measurements. Modifications are observed in both the multilayers at (dE/dx)e values much below the threshold values for Ni and Pt. This effect is attributed to the discontinuous nature of the metal layers. In both the multilayers interfacial roughness increases with irradiation dose. While Ni/C multilayers exhibit large ion-beam induced intermixing, no observable intermixing is observed in the case of Pt/C multilayer. This difference in the behavior of the two systems suggests a significant role for chemically guided defect motion in the mixing process associated with swift heavy ion irradiation.
Multiperiodicity in plasmonic multilayers: General description and diversity of topologies

DEFF Research Database (Denmark)

Orlov, Alexey A.; Krylova, Anastasia K.; Zhukovsky, Sergei

2014-01-01

We introduce multiperiodicity in periodicmetal-dielectric multilayers by stacking more than two types of metal and/or dielectric layers into the unit cell. A simple way to characterize arbitrary multiperiodic multilayers using permutation vectors is suggested and employed. Effects of multiperiodi...... of multiperiodicity up to its fourth order are investigated. We demonstrate that various topologies of multiple-sheet isofrequency and dispersion surfaces exist for such plasmonic multilayers, including a photonic realization of nontrivial isolated Dirac cones....
Analytical and numerical investigation of double diffusion in thermally anisotropy multilayer porous medium

Energy Technology Data Exchange (ETDEWEB)

Bennacer, R. [Neuville sur Oise, LEEVAM 5 mail Gay Lussac, Cergy-Pontoise Cedex (France); Mohamad, A.A. [CEERE University of Calgary, Department of Mechanical and Manufacturing Engineering, Calgary, Alberta (Canada); Ganaoui, M.El [Faculte des Sciences et Techniques de Limoges, Limoges (France)

2005-02-01

Double-diffusive natural convection within a multilayer anisotropic porous medium is studied numerically and analytically. The domain composed of two horizontal porous layers is subjected to a uniform horizontal heat flux and a vertical mass flux, where only the lower one is thermally anisotropic. Darcy model with classical Boussinesq approximation is used in formulating the mathematical model. The effect of thermal anisotropy and the relative width of the two layers on the flow and transfers is illustrated with characterising the transitions from the diffusive to the convective solution. Results were well compared with respect to a developed analytical approach, based on a parallel flow approximation for thermally anisotropic multilayer media. (orig.)
Multilayer Strip Dipole Antenna Using Stacking Technique and Its Application for Curved Surface

Directory of Open Access Journals (Sweden)

Charinsak Saetiaw

2013-01-01

Full Text Available This paper presents the design of multilayer strip dipole antenna by stacking a flexible copper-clad laminate utilized for curved surface on the cylindrical objects. The designed antenna will reduce the effects of curving based on relative lengths that are changed in each stacking flexible copper-clad laminate layer. Curving is different from each layer of the antenna, so the resonance frequency that resulted from an extended antenna provides better frequency response stability compared to modern antenna when it is curved or attached to cylindrical objects. The frequency of multilayer antenna is designed at 920 MHz for UHF RFID applications.
Docetaxel-loaded multilayer nanoparticles with nanodroplets for cancer therapy.

Science.gov (United States)

Oh, Keun Sang; Kim, Kyungim; Yoon, Byeong Deok; Lee, Hye Jin; Park, Dal Yong; Kim, Eun-Yeong; Lee, Kiho; Seo, Jae Hong; Yuk, Soon Hong

2016-01-01

A mixture of docetaxel (DTX) and Solutol(®) HS 15 (Solutol) transiently formed nanodroplets when it was suspended in an aqueous medium. However, nanodroplets that comprised DTX and Solutol showed a rapid precipitation of DTX because of their unstable characteristics in the aqueous medium. The incorporation of nanodroplets that comprised DTX and Solutol through vesicle fusion and subsequent stabilization was designed to prepare multilayer nanoparticles (NPs) with a DTX-loaded Solutol nanodroplet (as template NPs) core for an efficient delivery of DTX as a chemotherapeutic drug. As a result, the DTX-loaded Solutol nanodroplets (~11.7 nm) were observed to have an increased average diameter (from 11.7 nm to 156.1 nm) and a good stability of the hydrated NPs without precipitation of DTX by vesicle fusion and multilayered structure, respectively. Also, a long circulation of the multilayer NPs was observed, and this was due to the presence of Pluronic F-68 on the surface of the multilayer NPs. This led to an improved antitumor efficacy based on the enhanced permeation and retention effect. Therefore, this study indicated that the multilayer NPs have a considerable potential as a drug delivery system with an enhanced therapeutic efficacy by blood circulation and with low side effects.
Self-Propagating Reactive Fronts in Compacts of Multilayered Particles

International Nuclear Information System (INIS)

Sraj, I.; Vohra, M.; Alawieh, L.; Weihs, T.P.; Knio, O.M.

2013-01-01

Reactive multilayered foils in the form of thin films have gained interest in various applications such as joining, welding, and ignition. Typically, thin film multilayers support self-propagating reaction fronts with speeds ranging from 1 to 20 m/s. In some applications, however, reaction fronts with much smaller velocities are required. This recently motivated Fritz et al. (2011) to fabricate compacts of regular sized/shaped multilayered particles and demonstrate self-sustained reaction fronts having much smaller velocities than thin films with similar layering. In this work, we develop a simplified numerical model to simulate the self-propagation of reactive fronts in an idealized compact, comprising identical Ni/Al multilayered particles in thermal contact. The evolution of the reaction in the compact is simulated using a two-dimensional transient model, based on a reduced description of mixing, heat release, and thermal transport. Computed results reveal that an advancing reaction front can be substantially delayed as it crosses from one particle to a neighboring particle, which results in a reduced mean propagation velocity. A quantitative analysis is thus conducted on the dependence of these phenomena on the contact area between the particles, the thermal contact resistance, and the arrangement of the multilayered particles.
Self-Propagating Reactive Fronts in Compacts of Multilayered Particles

Directory of Open Access Journals (Sweden)

Ihab Sraj

2013-01-01

Full Text Available Reactive multilayered foils in the form of thin films have gained interest in various applications such as joining, welding, and ignition. Typically, thin film multilayers support self-propagating reaction fronts with speeds ranging from 1 to 20 m/s. In some applications, however, reaction fronts with much smaller velocities are required. This recently motivated Fritz et al. (2011 to fabricate compacts of regular sized/shaped multilayered particles and demonstrate self-sustained reaction fronts having much smaller velocities than thin films with similar layering. In this work, we develop a simplified numerical model to simulate the self-propagation of reactive fronts in an idealized compact, comprising identical Ni/Al multilayered particles in thermal contact. The evolution of the reaction in the compact is simulated using a two-dimensional transient model, based on a reduced description of mixing, heat release, and thermal transport. Computed results reveal that an advancing reaction front can be substantially delayed as it crosses from one particle to a neighboring particle, which results in a reduced mean propagation velocity. A quantitative analysis is thus conducted on the dependence of these phenomena on the contact area between the particles, the thermal contact resistance, and the arrangement of the multilayered particles.

Decomposition of multilayer benzene and n-hexane films on vanadium.

Science.gov (United States)

Souda, Ryutaro

2015-09-21

Reactions of multilayer hydrocarbon films with a polycrystalline V substrate have been investigated using temperature-programmed desorption and time-of-flight secondary ion mass spectrometry. Most of the benzene molecules were dissociated on V, as evidenced by the strong depression in the thermal desorption yields of physisorbed species at 150 K. The reaction products dehydrogenated gradually after the multilayer film disappeared from the surface. Large amount of oxygen was needed to passivate the benzene decomposition on V. These behaviors indicate that the subsurface sites of V play a role in multilayer benzene decomposition. Decomposition of the n-hexane multilayer films is manifested by the desorption of methane at 105 K and gradual hydrogen desorption starting at this temperature, indicating that C-C bond scission precedes C-H bond cleavage. The n-hexane dissociation temperature is considerably lower than the thermal desorption temperature of the physisorbed species (140 K). The n-hexane multilayer morphology changes at the decomposition temperature, suggesting that a liquid-like phase formed after crystallization plays a role in the low-temperature decomposition of n-hexane.
Multilayer composition coatings for cutting tools: formation and performance properties

Science.gov (United States)

Tabakov, Vladimir P.; Vereschaka, Anatoly S.; Vereschaka, Alexey A.

2018-03-01

The paper considers the concept of a multi-layer architecture of the coating in which each layer has a predetermined functionality. Latest generation of coatings with multi-layered architecture for cutting tools secure a dual nature of the coating, in which coatings should not only improve the mechanical and physical characteristics of the cutting tool material, but also reduce the thermo-mechanical effect on the cutting tool determining wear intensity. Here are presented the results of the development of combined methods of forming multi-layer coatings with improved properties. Combined method of forming coatings using a pulsed laser allowed reducing excessively high levels of compressive residual stress and increasing micro hardness of the multilayered coatings. The results in testing coated HSS tools showed that the use of additional pulse of laser processing increases tool life up to 3 times. Using filtered cathodic vacuum arc deposition for the generation of multilayer coatings based on TiAlN compound has increased the wear-resistance of carbide tools by 2 fold compared with tool life of cutting tool with commercial TiN coatings. The aim of this study was to develop an innovative methodological approach to the deposition of multilayer coatings for cutting tools with functional architectural selection, properties and parameters of the coating based on sound knowledge of coating failure in machining process.
Multiple analysis of an unknown optical multilayer coating

International Nuclear Information System (INIS)

Dobrowolski, J.A.; Ho, F.C.; Waldorf, A.

1985-01-01

Results are given of the analysis at five different laboratories of an unknown optical multilayer coating. In all, eleven different analytical and laboratory techniques were applied to the problem. The multilayer nominally consisted of three dielectric and two metallic layers. It was demonstrated convincingly that with present day techniques it is possible to determine the basic structure of such a coating
Enhancement of the spin Peltier effect in multilayers

Science.gov (United States)

Uchida, K.; Iguchi, R.; Daimon, S.; Ramos, R.; Anadón, A.; Lucas, I.; Algarabel, P. A.; Morellón, L.; Aguirre, M. H.; Ibarra, M. R.; Saitoh, E.

2017-05-01

The spin Peltier effect (SPE), heat-current generation as a result of spin-current injection, has been investigated in alternately stacked Pt/Fe3O4 multilayer films. The temperature modulation induced by the SPE in the [Pt/Fe3O4]×n films was found to be significantly enhanced with increasing the number of Pt/Fe3O4 bilayers n . This SPE enhancement is much greater than that expected for a simple stack of independent Pt/Fe3O4 bilayers. The observed n dependence of the SPE can be explained by introducing spin-current redistribution in the multilayer films in the thickness direction, in a manner similar to the enhancement of the spin Seebeck effect in multilayers.
Neutron spin quantum precession using multilayer spin splitters and a phase-spin echo interferometer

International Nuclear Information System (INIS)

Ebisawa, Toru; Tasaki, Seiji; Kawai, Takeshi; Hino, Masahiro; Akiyoshi, Tsunekazu; Achiwa, Norio; Otake, Yoshie; Funahashi, Haruhiko.

1996-01-01

Neutron spin quantum precession by multilayer spin splitter has been demonstrated using a new spin interferometer. The multilayer spin splitter consists of a magnetic multilayer mirror on top, followed by a gap layer and a non magnetic multilayer mirror which are evaporated on a silicon substrate. Using the multilayer spin splitter, a polarized neutron wave in a magnetic field perpendicular to the polarization is split into two spin eigenstates with a phase shift in the direction of the magnetic field. The spin quantum precession is equal to the phase shift, which depends on the effective thickness of the gap layer. The demonstration experiments verify the multilayer spin splitter as a neutron spin precession device as well as the coherent superposition principle of the two spin eigenstates. We have developed a new phase-spin echo interferometer using the multilayer spin splitters. We present successful performance tests of the multilayer spin splitter and the phase-spin echo interferometer. (author)
Stress in tungsten carbide-diamond like carbon multilayer coatings

NARCIS (Netherlands)

Pujada, B.R.; Tichelaar, F.D.; Janssen, G.C.A.M.

2007-01-01

Tungsten carbide-diamond like carbon (WC-DLC) multilayer coatings have been prepared by sputter deposition from a tungsten-carbide target and periodic switching on and off of the reactive acetylene gas flow. The stress in the resulting WC-DLC multilayers has been studied by substrate curvature.
Enhancement of surface mechanical properties by using TiN[BCN/BN] n/c-BN multilayer system

Science.gov (United States)

Moreno, H.; Caicedo, J. C.; Amaya, C.; Muñoz-Saldaña, J.; Yate, L.; Esteve, J.; Prieto, P.

2010-11-01

The aim of this work is to improve the mechanical properties of AISI 4140 steel substrates by using a TiN[BCN/BN] n/c-BN multilayer system as a protective coating. TiN[BCN/BN] n/c-BN multilayered coatings via reactive r.f. magnetron sputtering technique were grown, systematically varying the length period ( Λ) and the number of bilayers ( n) because one bilayer ( n = 1) represents two different layers ( tBCN + tBN), thus the total thickness of the coating and all other growth parameters were maintained constant. The coatings were characterized by Fourier transform infrared spectroscopy showing bands associated with h-BN bonds and c-BN stretching vibrations centered at 1400 cm -1 and 1100 cm -1, respectively. Coating composition and multilayer modulation were studied via secondary ion mass spectroscopy. Atomic force microscopy analysis revealed a reduction in grain size and roughness when the bilayer number ( n) increased and the bilayer period decreased. Finally, enhancement of mechanical properties was determined via nanoindentation measurements. The best behavior was obtained when the bilayer period ( Λ) was 80 nm ( n = 25), yielding the relative highest hardness (˜30 GPa) and elastic modulus (230 GPa). The values for the hardness and elastic modulus are 1.5 and 1.7 times greater than the coating with n = 1, respectively. The enhancement effects in multilayered coatings could be attributed to different mechanisms for layer formation with nanometric thickness due to the Hall-Petch effect; because this effect, originally used to explain increased hardness with decreasing grain size in bulk polycrystalline metals, has also been used to explain hardness enhancements in multilayered coatings taking into account the thickness reduction at individual single layers that make up the multilayered system. The Hall-Petch model based on dislocation motion within layered and across layer interfaces has been successfully applied to multilayered coatings to explain this
Enhancement of surface mechanical properties by using TiN[BCN/BN]n/c-BN multilayer system

International Nuclear Information System (INIS)

Moreno, H.; Caicedo, J.C.; Amaya, C.; Munoz-Saldana, J.; Yate, L.; Esteve, J.; Prieto, P.

2010-01-01

The aim of this work is to improve the mechanical properties of AISI 4140 steel substrates by using a TiN[BCN/BN] n /c-BN multilayer system as a protective coating. TiN[BCN/BN] n /c-BN multilayered coatings via reactive r.f. magnetron sputtering technique were grown, systematically varying the length period (Λ) and the number of bilayers (n) because one bilayer (n = 1) represents two different layers (t BCN + t BN ), thus the total thickness of the coating and all other growth parameters were maintained constant. The coatings were characterized by Fourier transform infrared spectroscopy showing bands associated with h-BN bonds and c-BN stretching vibrations centered at 1400 cm -1 and 1100 cm -1 , respectively. Coating composition and multilayer modulation were studied via secondary ion mass spectroscopy. Atomic force microscopy analysis revealed a reduction in grain size and roughness when the bilayer number (n) increased and the bilayer period decreased. Finally, enhancement of mechanical properties was determined via nanoindentation measurements. The best behavior was obtained when the bilayer period (Λ) was 80 nm (n = 25), yielding the relative highest hardness (∼30 GPa) and elastic modulus (230 GPa). The values for the hardness and elastic modulus are 1.5 and 1.7 times greater than the coating with n = 1, respectively. The enhancement effects in multilayered coatings could be attributed to different mechanisms for layer formation with nanometric thickness due to the Hall-Petch effect; because this effect, originally used to explain increased hardness with decreasing grain size in bulk polycrystalline metals, has also been used to explain hardness enhancements in multilayered coatings taking into account the thickness reduction at individual single layers that make up the multilayered system. The Hall-Petch model based on dislocation motion within layered and across layer interfaces has been successfully applied to multilayered coatings to explain this
Photo-crosslinkable polymers for fabrication of photonic multilayer sensors

Science.gov (United States)

Chiappelli, Maria; Hayward, Ryan C.

2013-03-01

We have used photo-crosslinkable polymers to fabricate photonic multilayer sensors. Benzophenone is utilized as a covalently incorporated pendent photo-crosslinker, providing a convenient means of fabricating multilayer films by sequential spin-coating and crosslinking processes. Colorimetric temperature sensors were designed from thermally-responsive, low-refractive index poly(N-isopropylacrylamide) (PNIPAM) and high-refractive index poly(para-methyl styrene) (P pMS). Copolymer chemistries and layer thicknesses were selected to provide robust multilayer sensors which show color changes across nearly the full visible spectrum due to changes in temperature of the hydrated film stack. We have characterized the uniformity and interfacial broadening within the multilayers, the kinetics of swelling and de-swelling, and the reversibility over multiple hydration/dehydration cycles. We also describe how the approach can be extended to alternative sensor designs through the ability to tailor each layer independently, as well as to additional stimuli by selecting alternative copolymer chemistries.
Highly efficient blazed grating with multilayer coating for tender X-ray energies

NARCIS (Netherlands)

Senf, F.; Bijkerk, Frederik; Eggenstein, F.; Gwalt, G.; Huang, Qiushi; van de Kruijs, Robbert Wilhelmus Elisabeth; Kutz, O.; Lemke, S.; Louis, Eric; Mertin, M.; Packe, I.; Rudolph, I.; Schafers, F.; Siewert, F.; Sokolov, A.; Sturm, Jacobus Marinus; Waberski, C.; Wang, Z.; Wolf, J.; Zeschke, T.; Erko, A.

2016-01-01

For photon energies of 1 – 5 keV, blazed gratings with multilayer coating are ideally suited for the suppression of stray and higher orders light in grating monochromators. We developed and characterized a blazed 2000 lines/mm grating coated with a 20 period Cr/C- multilayer. The multilayer
Structural and mechanical properties of titanium and titanium diboride monolayers and Ti/TiB2 multilayers

International Nuclear Information System (INIS)

Chu, K.; Lu, Y.H.; Shen, Y.G.

2008-01-01

Nano-multilayers represent a new class of engineering materials that are made up of alternating nanometer scale layers of two different components. In the present work a titanium (Ti) monolayer was combined with titanium diboride (TiB 2 ) to form a Ti/TiB 2 nano-multilayer. Designed experimental parameters enabled an evaluation of the effects of direct current bias voltage (U b ) and bilayer thickness (Λ) during multilayer deposition on the mechanical properties of reactively sputtered Ti/TiB 2 multilayer films. Their nanostructures and mechanical properties were characterized and analyzed using X-ray photoelectron spectroscopy (XPS), low-angle and high-angle X-ray diffraction (XRD), plan-view and cross-sectional high-resolution transmission electron microscopy (HRTEM), and microindentation measurements. Under the optimal bias voltage of U b = - 60 V, it was found that Λ (varied from 1.1 to 9.8 nm) was the most important factor which dominated the nanostructure and hardness. The hardness values obtained varied from 12 GPa for Ti and 15 GPa for TiB 2 monolayers, up to 33 GPa for the hardest Ti/TiB 2 multilayer at Λ = 1.9 nm. The observed hardness enhancement correlated to the layer thickness, followed a relation similar to the Hall-Petch strengthening dependence, with a generalized power of ∼ 0.6. In addition, the structural barriers between two materials (hcp Ti/amorphous TiB 2 ) and stress relaxation at interfaces within multilayer films resulted in a reduction of crack propagation and high-hardness
Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications

Science.gov (United States)

Kar-Roy, Arjun; Howard, David; Preisler, Edward J.; Racanelli, Marco

2013-05-01

In this paper, we report on the highest speed 240GHz/340GHz FT/FMAX NPN which is now available for product designs in the SBC18H4 process variant of TowerJazz's mature 0.18μm SBC18 silicon germanium (SiGe) BiCMOS technology platform. NFMIN of ~2dB at 50GHz has been obtained with these NPNs. We also describe the integration of earlier generation NPNs with FT/FMAX of 240GHz/280GHz into SBC13H3, a 0.13μm SiGe BiCMOS technology platform. Next, we detail the integration of the deep silicon via (DSV), through silicon via (TSV), high-resistivity substrate, sub-field stitching and hybrid-stitching capability into the 0.18μm SBC18 technology platform to enable higher performance and highly integrated product designs. The integration of SBC18H3 into a thick-film SOI substrate, with essentially unchanged FT and FMAX, is also described. We also report on recent circuit demonstrations using the SBC18H3 platform: (1) a 4-element phased-array 70-100GHz broadband transmit and receive chip with flat saturated power greater than 5dBm and conversion gain of 33dB; (2) a fully integrated W-band 9-element phase-controllable array with responsivity of 800MV/W and receiver NETD is 0.45K with 20ms integration time; (3) a 16-element 4x4 phased-array transmitter with scanning in both the E- and H-planes with maximum EIRP of 23-25 dBm at 100-110GHz; (4) a power efficient 200GHz VCO with -7.25dBm output power and tuning range of 3.5%; and (5) a 320GHz 16-element imaging receiver array with responsivity of 18KV/W at 315GHz, a 3dB bandwidth of 25GHz and a low NEP of 34pW/Hz1/2. Wafer-scale large-die implementation of the phased-arrays and mmWave imagers using stitching in TowerJazz SBC18 process are also discussed.
Thermal stress prediction in mirror and multilayer coatings.

Science.gov (United States)

Cheng, Xianchao; Zhang, Lin; Morawe, Christian; Sanchez Del Rio, Manuel

2015-03-01

Multilayer optics for X-rays typically consist of hundreds of periods of two types of alternating sub-layers which are coated on a silicon substrate. The thickness of the coating is well below 1 µm (tens or hundreds of nanometers). The high aspect ratio (∼10(7)) between the size of the optics and the thickness of the multilayer can lead to a huge number of elements (∼10(16)) for the numerical simulation (by finite-element analysis using ANSYS code). In this work, the finite-element model for thermal-structural analysis of multilayer optics has been implemented using the ANSYS layer-functioned elements. The number of meshed elements is considerably reduced and the number of sub-layers feasible for the present computers is increased significantly. Based on this technique, single-layer coated mirrors and multilayer monochromators cooled by water or liquid nitrogen are studied with typical parameters of heat-load, cooling and geometry. The effects of cooling-down of the optics and heating of the X-ray beam are described. It is shown that the influences from the coating on temperature and deformation are negligible. However, large stresses are induced in the layers due to the different thermal expansion coefficients between the layer and the substrate materials, which is the critical issue for the survival of the optics. This is particularly true for the liquid-nitrogen cooling condition. The material properties of thin multilayer films are applied in the simulation to predict the layer thermal stresses with more precision.
Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

Science.gov (United States)

Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

2017-06-27

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.
Status and limitations of multilayer X-ray interference structures

International Nuclear Information System (INIS)

Kortright, J.B.

1996-01-01

Trends in the performance of x-ray multilayer interference structures with periods ranging from 9 to 130 (angstrom) are reviewed. Analysis of near-normal incidence reflectance data vs photon energy reveals that the effective interface with σ in a static Debye-Waller model, describing interdiffusion and roughness, decreases as the multilayer period decreases, and reaches a lower limit of roughly 2 (angstrom). Specular reflectance and diffuse scattering from uncoated and multilayer-coated substrates having different roughness suggest that this lower limit results largely from substrate roughness. The increase in interface width with period thus results from increasing roughness of interdiffusion as the layer thickness increases
A Generic Model for the Resuspension of Multilayer Aerosol Deposits by Turbulent Flow

International Nuclear Information System (INIS)

Friess, H.; Yadigaroglu, G.

2001-01-01

An idealized lattice structure is considered of multilayer aerosol deposits, where every particle at the deposit surface is associated with a resuspension rate constant depending on a statistically distributed particle parameter and on flow conditions. The response of this generic model is represented by a set of integrodifferential equations. As a first application of the general formalism, the behavior of Fromentin's multilayer model is analyzed, and the model parameters are adapted to experimental data. In addition, improved relations between model parameters and physical input parameters are proposed. As a second application, a method is proposed for building multilayer models by using resuspension rate constants of existing monolayer models. The method is illustrated by a sample of monolayer data resulting from the model of Reeks, Reed, and Hall. Also discussed is the error to be expected if a monolayer resuspension model, which works well for thin aerosol deposits, is applied to thick deposits under the classical monolayer assumption that all deposited particles interact with the fluid at all times
Technique for etching monolayer and multilayer materials

Science.gov (United States)

Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

2015-10-06

A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.
Rocket flight of a multilayer coated high-density EUV toroidal grating

Science.gov (United States)

Keski-Kuha, Ritva A. M.; Thomas, Roger J.; Davila, Joseph M.

1992-01-01

A multilayer coated high density toroidal grating was flown on a sounding rocket experiment in the Solar EUV Rocket Telescope and Spectrograph (SERTS) instrument. To our knowledge this is the first space flight of a multilayer coated grating. Pre-flight performance evaluation showed that the application of a 10-layer Ir/Si multilayer coating to the 3600 l/mm blazed toroidal replica grating produced a factor of 9 enhancement in peak efficiency near the design wavelength around 30 nm in first order over the standard gold coating, with a measured EUV efficiency that peaked at 3.3 percent. In addition, the grating's spectral resolution of better than 5000 was maintained. The region of enhanced grating efficiency due to the multilayer coating is clearly evident in the flight data. Within the bandpass of the multilayer coating, the recorded film densities were roughly equivalent to those obtained with a factor of six longer exposure on the previous flight of the SERTS instrument.
Mathematical Formulation of Multilayer Networks

Science.gov (United States)

De Domenico, Manlio; Solé-Ribalta, Albert; Cozzo, Emanuele; Kivelä, Mikko; Moreno, Yamir; Porter, Mason A.; Gómez, Sergio; Arenas, Alex

2013-10-01

A network representation is useful for describing the structure of a large variety of complex systems. However, most real and engineered systems have multiple subsystems and layers of connectivity, and the data produced by such systems are very rich. Achieving a deep understanding of such systems necessitates generalizing “traditional” network theory, and the newfound deluge of data now makes it possible to test increasingly general frameworks for the study of networks. In particular, although adjacency matrices are useful to describe traditional single-layer networks, such a representation is insufficient for the analysis and description of multiplex and time-dependent networks. One must therefore develop a more general mathematical framework to cope with the challenges posed by multilayer complex systems. In this paper, we introduce a tensorial framework to study multilayer networks, and we discuss the generalization of several important network descriptors and dynamical processes—including degree centrality, clustering coefficients, eigenvector centrality, modularity, von Neumann entropy, and diffusion—for this framework. We examine the impact of different choices in constructing these generalizations, and we illustrate how to obtain known results for the special cases of single-layer and multiplex networks. Our tensorial approach will be helpful for tackling pressing problems in multilayer complex systems, such as inferring who is influencing whom (and by which media) in multichannel social networks and developing routing techniques for multimodal transportation systems.
A novel multilayer model with controllable mechanical properties for magnesium-based bone plates.

Science.gov (United States)

Zhou, Juncen; Huang, Wanru; Li, Qing; She, Zuxin; Chen, Funan; Li, Longqin

2015-04-01

Proper mechanical properties are essential for the clinical application of magnesium-based implants. In the present work, a novel multilayer model composed of three layers with desirable features was developed. The modulus of the multilayer model can be adjusted by changing the thickness of each layer. To combine three layers and improve the corrosion resistance of the whole multilayer model, the polycaprolactone coating was employed. In the immersion test, pH values, the concentration of released magnesium ions, and weight loss indicate that the corrosion rate of multilayer models is considerable lower than that of the one-layer bare substrate. The three-point bending test, which is used to examine models' mechanical properties, shows that the flexural modulus of multilayer models is reduced effectively. In addition, the mechanical degradation of multilayer models is more stable, compared to the one-layer substrate.

The NSLS-II Multilayer Laue Lens Deposition System

International Nuclear Information System (INIS)

Conley, R.; Bouet, N.; Biancarosa, J.; Shen, Q.; Boas, L.; Feraca, J.; Rosenbaum, L.

2009-01-01

The NSLS-II(1) program has a requirement for an unprecedented level of x-ray nanofocusing and has selected the wedged multilayer Laue lens(2,3) (MLL) as the optic of choice to meet this goal. In order to fabricate the MLL a deposition system is required that is capable of depositing depth-graded and laterally-graded multilayers with precise thickness control over many thousands of layers, with total film growth in one run up to 100 m thick or greater. This machine design expounds on the positive features of a rotary deposition system(4) constructed previously for MLLs and will contain multiple stationary, horizontally-oriented magnetron sources where a transport will move a substrate back and forth in a linear fashion over shaped apertures at well-defined velocities to affect a multilayer coating.
Electron with arbitrary pseudo-spins in multilayer graphene

Institute of Scientific and Technical Information of China (English)

Worasak Prarokijjak; Bumned Soodchomshom

2015-01-01

Using the low-energy effective Hamiltonian of the ABC-stacked multilayer graphene, the pseudo-spin coupling to real orbital angular momentum of electrons in multilayer graphene is investigated. We show that the electron wave function in N-layer graphene mimics the behavior of a particle with a spin of N × (}/2), where N={1, 2, 3, . . .}. It is said that for N>1 the low-energy effective Hamiltonian for ABC-stacked graphene cannot be used to describe pseudo-spin-1/2 particles. The wave function of electrons in multilayer graphene may behave like fermionic (or bosonic) particle for N being odd (or even). In this paper, we propose a theory of graphene serving as a host material of electrons with arbitrary pseudo-spins tunable by changing the number of graphene layers.
Electron with arbitrary pseudo-spins in multilayer graphene

International Nuclear Information System (INIS)

Prarokijjak Worasak; Soodchomshom Bumned

2015-01-01

Using the low-energy effective Hamiltonian of the ABC-stacked multilayer graphene, the pseudo-spin coupling to real orbital angular momentum of electrons in multilayer graphene is investigated. We show that the electron wave function in N-layer graphene mimics the behavior of a particle with a spin of N × (ħ/2), where N = {1, 2, 3,…}. It is said that for N > 1 the low-energy effective Hamiltonian for ABC-stacked graphene cannot be used to describe pseudo-spin-1/2 particles. The wave function of electrons in multilayer graphene may behave like fermionic (or bosonic) particle for N being odd (or even). In this paper, we propose a theory of graphene serving as a host material of electrons with arbitrary pseudo-spins tunable by changing the number of graphene layers. (paper)
Elasto/visco-plastic dynamic response of multi-layered shells of revolution

International Nuclear Information System (INIS)

Takezono, S.; Tao, K.; Taguchi, T.

1989-01-01

Many investigations of the elasto/visco-plastic dynamic response of shells have been conducted. These investigations, however, have been mostly concerned with the case of single-layered shells, and few studies on multi-layered shells have been reported in spite of their importance in engineering. In this paper, the authors study the elasto/visco-plastic dynamic response of the multi-layered shells of revolution subjected to impulsive loads. The equations of motion and the relations between the strains and displacements are derived by extending Sanders' theory for elastic thin shells. As the constitutive relation, Hooke's law is used in the linear elastic range, and the elasto/visco-plastic equations are employed in the plastic range. The criterion for yielding used in the analysis is the von Mises yield theory. In the numerical analysis of the fundamental equations for incremental values an usual finite difference form is employed for the spatial derivatives and the inertia terms are treated with the backward difference formula. The solutions are obtained by summation of the incremental values
Investigation of aperiodic W/C multi-layer mirror for X-ray optics

International Nuclear Information System (INIS)

Wang Zhanshan; Cheng Xinbin; Zhu Jingtao; Huang Qiushi; Zhang Zhong; Chen Lingyan

2011-01-01

Design, fabrication and characterization of aperiodic tungsten/carbon (W/C) multi-layer mirror were studied. W/C multi-layer was designed as a broad-angle reflective supermirror for Cu-Kα line (λ = 0.154 nm) in the grazing incident angular range (0.9-1.1 deg.) using simulated annealing algorithm. To deposit the W/C depth-graded multi-layer mirror accurately, we introduce an effective layer growth rate as a function of layer thickness. This method greatly improves the reflectivity curve compared to the conventional multi-layer mirror prepared with constant growth rate. The deposited multi-layer mirror exhibits an average reflectivity of 19% over the grazing incident angle range of 0.88-1.08 deg. which mainly coincides with the designed value. Furthermore, the physical mechanisms were discussed and the re-sputtering process of light-atom layers is accounted for the modification of layer thicknesses which leads to the effective growth rates. Using this calibration method, the aperiodic multi-layer mirrors can be better fabricated for X-ray optics.
Exchange interactions in Fe/Y multilayers

International Nuclear Information System (INIS)

Elkabil, R.; Elkaidi, I.; Annouar, F.; Lassri, H.; Hamdoun, A.; Bensassi, B.; Berrada, A.; Krishnan, R.

2005-01-01

The magnetization of Fe/Y multilayers has been measured as a function of temperature. A bulk-like T 3/2 temperature dependence of the magnetization is observed for all multilayers in the temperature range 5-300 K. The spin-wave constant B is found to decrease inversely with t Fe . A simple theoretical model with exchange interactions only, and with non-interacting magnons, has been used to explain the temperature dependence of the magnetization and the approximate values for the bulk exchange interaction J b , surface exchange interaction J s and the interlayer exchange interaction J I for various Fe layer thicknesses have been obtained
Domain structures and magnetization reversal in Co/Pd and CoFeB/Pd multilayers

Energy Technology Data Exchange (ETDEWEB)

Sbiaa, R., E-mail: rachid@squ.edu.om [Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123 (Oman); Ranjbar, M. [Physics Department, University of Gothenburg, 412 96 Gothenburg (Sweden); Åkerman, J. [Physics Department, University of Gothenburg, 412 96 Gothenburg (Sweden); Materials Physics, School of ICT, Royal Institute of Technology (KTH), 164 40 Kista (Sweden)

2015-05-07

Domain structures and magnetization reversal of (Co/Pd) and (CoFeB/Pd) multilayers with 7 and 14 repeats were investigated. The Co-based multilayers show much larger coercivities, a better squareness, and a sharper magnetization switching than CoFeB-based multilayers. From magnetic force microscopy observations, both structures show strong reduction in domains size as the number of repeats increases but the magnetic domains for Co-based multilayers are more than one order of magnitude larger than for CoFeB-based multilayers. By imaging domains at different times, breaks in the (CoFeB/Pd) multilayer stripes were observed within only few hours, while no change could be seen for (Co/Pd) multilayers. Although CoFeB single layers are suitable for magnetoresistive devices due to their large spin polarization and low damping constants, their lamination with Pd suffers mainly from thermal instability.
Investigation of high mobility pseudomorphic SiGe p-channels in Si MOSFETS at low and high electric fields

International Nuclear Information System (INIS)

Palmer, Martin John

2001-01-01

Silicon Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) for high speed, high current applications are rapidly approaching the physical and financial limits of the technology. This opens opportunities for the incorporation of materials with intrinsically better transport characteristics. An alloy of silicon and germanium is one such material that is gaining much recognition as the active component of MOSFETs and as the secondary structures (such as the gate electrode). This work examines a batch of buried channel Si 0.64 Ge 0.36 p-MOSFETs, with a minimum effective length of 0.35 μm, under different bias conditions and at different temperatures. High current and transconductance enhancements are apparent at long gate lengths. The carrier mobility is up to a factor of 2.5 times that of silicon at room temperature and 7.5 times at 4 K. A clear trend of decreasing peak mobility with decreasing silicon cap thickness is evident. Simulations show that scattering caused by the roughness of the SiO 2 /Si interface dominates, rather than alloy scattering or Si/SiGe roughness, even for a buried channel. This scattering increases with the proximity of the carriers to the interface. An increase of interface trap density with decreasing cap thickness, demonstrates that segregated germanium exists some distance into the cap and interferes with the oxidation process. This will increase scattering through increased SiO 2 /Si roughness and increased trapped charge. The short channel, high field results are comparable or slightly worse than those of silicon due to lower saturation drift velocity. However, fitting to a drift-diffusion model shows an apparent increase in saturation velocity for short channels, especially at low temperatures. This effect correlates with the low field mobility and is greater for devices containing SiGe. This is an indication of velocity overshoot, which may enhance the performance of SiGe MOSFETs at deep submicron gate lengths. (author)
Finite-width plasmonic waveguides with hyperbolic multilayer cladding

DEFF Research Database (Denmark)

Babicheva, Viktoriia; Shalaginov, Mikhail Y.; Ishii, Satoshi

2015-01-01

Engineering plasmonic metamaterials with anisotropic optical dispersion enables us to tailor the properties of metamaterial-based waveguides. We investigate plasmonic waveguides with dielectric cores and multilayer metal-dielectric claddings with hyperbolic dispersion. Without using any homogeniz......Engineering plasmonic metamaterials with anisotropic optical dispersion enables us to tailor the properties of metamaterial-based waveguides. We investigate plasmonic waveguides with dielectric cores and multilayer metal-dielectric claddings with hyperbolic dispersion. Without using any...
Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

Energy Technology Data Exchange (ETDEWEB)

Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC V8W 3P6 (Canada)

2010-03-15

Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three-zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Docetaxel-loaded multilayer nanoparticles with nanodroplets for cancer therapy

Directory of Open Access Journals (Sweden)

Oh KS

2016-03-01

Full Text Available Keun Sang Oh,1,* Kyungim Kim,1,* Byeong Deok Yoon,1 Hye Jin Lee,1 Dal Yong Park,1 Eun-yeong Kim,1 Kiho Lee,1 Jae Hong Seo,2 Soon Hong Yuk1,2 1College of Pharmacy, Korea University, Sejong, 2Biomedical Research Center, Korea University Guro Hospital, Guro-gu, Seoul, Republic of Korea *These authors contributed equally to this work Abstract: A mixture of docetaxel (DTX and Solutol® HS 15 (Solutol transiently formed nanodroplets when it was suspended in an aqueous medium. However, nanodroplets that comprised DTX and Solutol showed a rapid precipitation of DTX because of their unstable characteristics in the aqueous medium. The incorporation of nanodroplets that comprised DTX and Solutol through vesicle fusion and subsequent stabilization was designed to prepare multilayer nanoparticles (NPs with a DTX-loaded Solutol nanodroplet (as template NPs core for an efficient delivery of DTX as a chemotherapeutic drug. As a result, the DTX-loaded Solutol nanodroplets (~11.7 nm were observed to have an increased average diameter (from 11.7 nm to 156.1 nm and a good stability of the hydrated NPs without precipitation of DTX by vesicle fusion and multilayered structure, respectively. Also, a long circulation of the multilayer NPs was observed, and this was due to the presence of Pluronic F-68 on the surface of the multilayer NPs. This led to an improved antitumor efficacy based on the enhanced permeation and retention effect. Therefore, this study indicated that the multilayer NPs have a considerable potential as a drug delivery system with an enhanced therapeutic efficacy by blood circulation and with low side effects. Keywords: multilayer nanoparticles, Solutol, Pluronic F-68, docetaxel, cancer therapy
Enhanced Detectability of Community Structure in Multilayer Networks through Layer Aggregation.

Science.gov (United States)

Taylor, Dane; Shai, Saray; Stanley, Natalie; Mucha, Peter J

2016-06-03

Many systems are naturally represented by a multilayer network in which edges exist in multiple layers that encode different, but potentially related, types of interactions, and it is important to understand limitations on the detectability of community structure in these networks. Using random matrix theory, we analyze detectability limitations for multilayer (specifically, multiplex) stochastic block models (SBMs) in which L layers are derived from a common SBM. We study the effect of layer aggregation on detectability for several aggregation methods, including summation of the layers' adjacency matrices for which we show the detectability limit vanishes as O(L^{-1/2}) with increasing number of layers, L. Importantly, we find a similar scaling behavior when the summation is thresholded at an optimal value, providing insight into the common-but not well understood-practice of thresholding pairwise-interaction data to obtain sparse network representations.
18O-tracer diffusion along nanoscaled Sc2O3/yttria stabilized zirconia (YSZ multilayers: on the influence of strain

Directory of Open Access Journals (Sweden)

Halit Aydin, Carsten Korte and Jürgen Janek

2013-01-01

Full Text Available The oxygen tracer diffusion coefficient describing transport along nano-/microscaled YSZ/Sc2O3 multilayers as a function of the thickness of the ion-conducting YSZ layers has been measured by isotope exchange depth profiling (IEDP, using secondary ion mass spectrometry (SIMS. The multilayer samples were prepared by pulsed laser deposition (PLD on (0001 Al2O3 single crystalline substrates. The values for the oxygen tracer diffusion coefficient were analyzed as a combination of contributions from bulk and interface contributions and compared with results from YSZ/Y2O3-multilayers with similar microstructure. Using the Nernst–Einstein equation as the relation between diffusivity and electrical conductivity we find very good agreement between conductivity and diffusion data, and we exclude substantial electronic conductivity in the multilayers. The effect of hetero-interface transport can be well explained by a simple interface strain model. As the multilayer samples consist of columnar film crystallites with a defined interface structure and texture, we also discuss the influence of this particular microstructure on the interfacial strain.
Anomalously Weak Scattering in Metal-Semiconductor Multilayer Hyperbolic Metamaterials

Directory of Open Access Journals (Sweden)

Hao Shen

2015-05-01

Full Text Available In contrast to strong plasmonic scattering from metal particles or structures in metal films, we show that patterns of arbitrary shape fabricated out of multilayer hyperbolic metamaterials become invisible within a chosen band of optical frequencies. This is due to anomalously weak scattering when the in-plane permittivity of the multilayer hyperbolic metamaterials is tuned to match with the surrounding medium. This new phenomenon is described theoretically and demonstrated experimentally by optical characterization of various patterns in Au-Si multilayer hyperbolic metamaterials. This anomalously weak scattering is insensitive to pattern sizes, shapes, and incident angles, and has potential applications in scattering cross-section engineering, optical encryption, low-observable conductive probes, and optoelectric devices.
Tunable Multilayer Graphene Metamaterials for Terahertz/Infrared Waveguide Modulators

DEFF Research Database (Denmark)

Khromova, Irina; Andryieuski, Andrei; Lavrinenko, Andrei

regimes of multilayer graphene-dielectric artificial metamaterials. The interplay between interband and intraband transitions in graphene allows converting the structure into a transparent and/or electromagnetically dense artificial medium. The gate voltage can be used to electrically control...... the concentration of carriers in the graphene sheets and, thus, efficiently change the dispersion of the whole structure. Placed inside a hollow waveguide, a multilayer graphene/dielectric metamaterial provides high-speed modulation and tunable bandpass filtering. The absence of scattered radiation enables dense...... the latter to shift its central frequency by 1:25% per every meV graphene Fermi energy change. We believe that graphene-dielectric multilayer metamaterials will constitute the functional platform for THz-IR waveguide-integrated devices....
Multilayer composite material and method for evaporative cooling

Science.gov (United States)

Buckley, Theresa M. (Inventor)

2002-01-01

A multilayer composite material and method for evaporative cooling of a person employs an evaporative cooling liquid that changes phase from a liquid to a gaseous state to absorb thermal energy. The evaporative cooling liquid is absorbed into a superabsorbent material enclosed within the multilayer composite material. The multilayer composite material has a high percentage of the evaporative cooling liquid in the matrix. The cooling effect can be sustained for an extended period of time because of the high percentage of phase change liquid that can be absorbed into the superabsorbent. Such a composite can be used for cooling febrile patients by evaporative cooling as the evaporative cooling liquid in the matrix changes from a liquid to a gaseous state to absorb thermal energy. The composite can be made with a perforated barrier material around the outside to regulate the evaporation rate of the phase change liquid. Alternatively, the composite can be made with an imperveous barrier material or semipermeable membrane on one side to prevent the liquid from contacting the person's skin. The evaporative cooling liquid in the matrix can be recharged by soaking the material in the liquid. The multilayer composite material can be fashioned into blankets, garments and other articles.
Multilayer tape cast SOFC – Effect of anode sintering temperature

DEFF Research Database (Denmark)

Hauch, Anne; Birkl, Christoph; Brodersen, Karen

2012-01-01

Multilayer tape casting (MTC) is considered a promising, cost-efficient, up-scalable shaping process for production of planar anode supported solid oxide fuel cells (SOFC). Multilayer tape casting of the three layers comprising the half cell (anode support/active anode/electrolyte) can potentially...
Boundary element method in dynamic interaction of structures with multilayers media

International Nuclear Information System (INIS)

Mihalache, N.; Poterasu, V.F.

1993-01-01

The paper presents the problems of dynamic interaction between the multilayers media and structure by means of B.E.M., using Green's functions. The structure considered by the authors as a particular problem concerns a reinforced concrete shear wall and soil foundation of three layers having different thickness and mechanical characteristics. The authors will present comparatively the stresses and the displacements in static and dynamic regime interaction response of the structure. Theoretical part of the paper presents: Green's functions for the multilayers media in dynamic regime, stiffness matrices, stresses and displacements in the multilayers media exprimed by means of the Green's functions induced by the shear and horizontal forces, computer program, consideration for dynamic, structure-foundation-multilayers soil foundation interaction. (author)
The polymorphic, multilayered and networked urbanised territory

DEFF Research Database (Denmark)

Nielsen, Tom

2015-01-01

The discussion of the network city has in recent years been supplemented by an increasing interest in reconsidering the notion of territory. Looking into both geographical and urban design theories, we find examples of a focus on how the networks of the city not only connect them irreversibly...... with sites and systems without any direct physical relation, but also of how this does not necessarily result in complete fragmentation and dissociation between the parts and the surrounding landscapes, as described in network city theory. By relating examples from this literature to a description...... in theory. The concept of The Polymorphic, Multilayered and Networked Urbanised Territory is introduced to grasp the reality experienced in European regions outside the largest and most potent versions of contemporary cities....
A TEM study of strained SiGe/Si and related heteroepitaxial structures

International Nuclear Information System (INIS)

Benedetti, Alessandro

2002-01-01

The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)

Multivalent-Counterion-Induced Surfactant Multilayer Formation at Hydrophobic and Hydrophilic Solid-Solution Interfaces.

Science.gov (United States)

Penfold, Jeffrey; Thomas, Robert K; Li, Peixun; Xu, Hui; Tucker, Ian M; Petkov, Jordan T; Sivia, Devinderjit S

2015-06-23

Surface multilayer formation from the anionic-nonionic surfactant mixture of sodium dodecyl dioxyethylene sulfate, SLES, and monododecyl dodecaethylene glycol, C12E12, by the addition of multivalent Al(3+) counterions at the solid-solution interface is observed and characterized by neutron reflectivity, NR. The ability to form surface multilayer structures on hydrophobic and hydrophilic silica and cellulose surfaces is demonstrated. The surface multilayer formation is more pronounced and more well developed on the hydrophilic and hydrophobic silica surfaces than on the hydrophilic and hydrophobic cellulose surfaces. The less well developed multilayer formation on the cellulose surfaces is attributed to the greater surface inhomogeneities of the cellulose surface which partially inhibit lateral coherence and growth of the multilayer domains at the surface. The surface multilayer formation is associated with extreme wetting properties and offers the potential for the manipulation of the solid surfaces for enhanced adsorption and control of the wetting behavior.
Domain wall theory and exchange stiffness in Co/Pd multilayers

NARCIS (Netherlands)

Kambersky, V.; Kambersky, V.; de Haan, P.; Simsova, J.; Porthun, S.; Porthun, S.; Gemperle, R.; Lodder, J.C.

1996-01-01

The stripe model of domain structure in multilayers is studied by micromagnetic simulation. The results indicate a strong reduction of the effective domain wall energy (by dipolar effects). Domain width measurements on sputtered Co/Pd multilayers are compared with the theory. The estimated exchange
Durable Corrosion Resistance of Copper Due to Multi-Layer Graphene

Directory of Open Access Journals (Sweden)

Abhishek Tiwari

2017-09-01

Full Text Available Ultra-thin graphene coating has been reported to provide considerable resistance against corrosion during short-term exposures, however, there is great variability in the corrosion resistance due to graphene coating in different studies. It may be possible to overcome the problem of hampered corrosion protection ability of graphene that is caused due to defective single layer graphene by applying multilayer graphene. Systematic electrochemical characterization showed that the multilayer graphene coating developed in the study provided significant corrosion resistance in a chloride solution and the corrosion resistance was sustained for long durations (~400 h, which is attributed to the multilayer graphene.
Ring-dot-shaped multilayer piezoelectric step-down transformers using PZT-based ceramics

International Nuclear Information System (INIS)

Kim, Insung; Joo, Hyeonkyu; Song, Jaesung; Jeong, Soonjong; Kim, Minsoo

2010-01-01

In this study, multilayer piezo stack transformers for switching mode power supply (SMPS) application were manufactured using 0.01Pb(Ni 1/3 Nb 2/3 )O 3 - 0.08Pb(Mn 1/3 Nb 2/3 )O 3 - 0.91Pb(Zr 0.505 Ti 0.495 )O 3 (PNN-PMN-PZT) ceramics. The voltage ratio of a multilayer piezo stack transformer showed a maximum at the resonance frequency of the input and then increased with increasing load resistance. The efficiency of the multilayer piezo stack transformer showed its highest value at around the matching load. The output power increased with increasing input voltage. The temperature of the multilayer piezo stack transformer increased with increasing output power and load resistance. The manufactured multilayer piezo stack transformer could be used up to 5 W at a resonance frequency of 70.25 kHz for SMPS application because the temperature rise from room temperature is believed to about 20 .deg. C and because the transformer is electrically stable. The newly-developed ring-dot-type step-down multilayer piezo stack transformer shows possible applications as SMPS for electronic power sources with excellent input-to-output properties.
High-reflectance La/B-based multilayer mirror for 6.x nm wavelength

NARCIS (Netherlands)

Kuznetsov, Dmitry; Yakshin, Andrey; Sturm, Jacobus Marinus; van de Kruijs, Robbert Wilhelmus Elisabeth; Louis, Eric; Bijkerk, Frederik

2015-01-01

We report a hybrid thin-film deposition procedure to significantly enhance the reflectivity of La/B-based multilayer structures. This is of relevance for applications of multilayer optics at 6.7-nm wavelength and beyond. Such multilayers showed a reflectance of 64.1% at 6.65 nm measured at
Fabrication of anticorrosive multilayer onto magnesium alloy substrates via spin-assisted layer-by-layer technique

Energy Technology Data Exchange (ETDEWEB)

Cai Kaiyong, E-mail: Kaiyong_cai@cqu.edu.cn [Key Laboratory of Biorheological Science and Technology (Chongqing University), Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); Sui Xiaojing; Hu Yan [Key Laboratory of Biorheological Science and Technology (Chongqing University), Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); Zhao Li [China National Centre for Biotechnology Development, No. 16, Xi Si Huan Zhong Lu, Haidian District, Beijing 100036 (China); Lai Min; Luo Zhong; Liu Peng; Yang Weihu [Key Laboratory of Biorheological Science and Technology (Chongqing University), Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China)

2011-12-01

To improve the corrosion resistance of magnesium alloy, we reported a novel approach for the fabrication of anticorrosive multilayers onto AZ91D substrates. The multilayers were composed of poly(ethylene imine) (PEI), poly(styrene sulfonate) (PSS) and 8-hydroxyquinoline (8HQ). They were deposited onto AZ91D substrates via a spin-assisted layer-by-layer (LbL) technique. The multilayered structure was stabilized with glutaraldehyde (GA) as crossing linker. It was confirmed by Fourier transform infrared spectroscopy (FT-IR). Surface morphologies and elemental compositions of the formed anticorrosive multilayers were characterized with scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS), respectively. The corrosion performance of the multilayer coated AZ91D substrates was characterized by hydrogen evolution. The results of electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization measurements suggested that the multilayered coating improved the corrosion resistance of AZ91D substrates. In vitro study revealed that the multilayered coating was cytocompatible. The study provides a potential alternative for the fabrication of corrosion resistant magnesium alloy-based implants. Highlights: {yields} Corrosion protective multilayers have been constructed onto AZ91D substrates via layer by layer technique. {yields} The multilayered structured containing 8-hydroxyquinoline highly improves the corrosion resistance of AZ91D substrates. {yields} The novel multilayered coating is potentially important for developing corrosion resistant magnesium alloy-based implants.
Fabrication of anticorrosive multilayer onto magnesium alloy substrates via spin-assisted layer-by-layer technique

International Nuclear Information System (INIS)

Cai Kaiyong; Sui Xiaojing; Hu Yan; Zhao Li; Lai Min; Luo Zhong; Liu Peng; Yang Weihu

2011-01-01

To improve the corrosion resistance of magnesium alloy, we reported a novel approach for the fabrication of anticorrosive multilayers onto AZ91D substrates. The multilayers were composed of poly(ethylene imine) (PEI), poly(styrene sulfonate) (PSS) and 8-hydroxyquinoline (8HQ). They were deposited onto AZ91D substrates via a spin-assisted layer-by-layer (LbL) technique. The multilayered structure was stabilized with glutaraldehyde (GA) as crossing linker. It was confirmed by Fourier transform infrared spectroscopy (FT-IR). Surface morphologies and elemental compositions of the formed anticorrosive multilayers were characterized with scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS), respectively. The corrosion performance of the multilayer coated AZ91D substrates was characterized by hydrogen evolution. The results of electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization measurements suggested that the multilayered coating improved the corrosion resistance of AZ91D substrates. In vitro study revealed that the multilayered coating was cytocompatible. The study provides a potential alternative for the fabrication of corrosion resistant magnesium alloy-based implants. Highlights: → Corrosion protective multilayers have been constructed onto AZ91D substrates via layer by layer technique. → The multilayered structured containing 8-hydroxyquinoline highly improves the corrosion resistance of AZ91D substrates. → The novel multilayered coating is potentially important for developing corrosion resistant magnesium alloy-based implants.
Investigation of CoFeV/TiZr multilayer by polarized neutron reflectometry

International Nuclear Information System (INIS)

Chen Bo; Li Xinxi; Huang Chaoqiang

2007-06-01

The interracial structures of CoFeV/TiZr multilayer play an important role in performance of polarizing supermirrors. Aiming to requirement, CoFeV/ TiZr layered samples with different structures were prepared. Specular reflection of polarized neutrons was employed to study the depth profile of scattering length, density, thickness and roughness of CoFeV/TiZr multilayer and magnetically dead layers. The result shows that the roughness in CoFeV/ TiZr multilayer can be described with roughness increase law and the thickness of magnetically dead layers is about 0.5 nm. The producing technology of the multilayer reaches the requirements. (authors)
Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

Energy Technology Data Exchange (ETDEWEB)

Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC, V8W 3P6 (Canada)

2010-04-15

The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72-hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Quantitative analysis of Moessbauer backscatter spectra from multilayer films

International Nuclear Information System (INIS)

Bainbridge, J.

1975-01-01

The quantitative interpretation of Moessbauer backscatter spectra with particular reference to internal conversion electrons has been treated assuming that electron attenuation in a surface film can be satisfactorily described by a simple exponential law. The theory of Krakowski and Miller has been extended to include multi-layer samples, and a relation between the Moessbauer spectrum area and an individual layer thickness derived. As an example, numerical results are obtained for a duplex oxide film grown on pure iron. (Auth.)
Degradation of periodic multilayers as seen by small-angle x-ray scattering and x-ray diffraction

CERN Document Server

Rafaja, D; Simek, D; Zdeborova, L; Valvoda, V

2002-01-01

The capabilities of small-angle x-ray scattering (SAXS) and wide-angle x-ray diffraction (XRD) to recognize structural changes in periodic multilayers were compared on Fe/Au multilayers with different degrees of structural degradation. Experimental results have shown that both methods are equally sensitive to the multilayer degradation, i.e., to the occurrence of non-continuous interfaces, to short-circuits in the multilayer structure and to the multilayer precipitation. XRD yielded additional information on the multilayer crystallinity, whilst SAXS could better recognize fragments of a long-range periodicity (remnants of the original multilayer structure). Changes in the multilayer structure were initiated by successive annealing at 200 and 300 deg. C. Experimental data were complemented by numerical simulations performed using a combination of optical theory and the distorted wave Born approximation for SAXS or the kinematical Born approximation for XRD.
Multilayer DNA Origami Packed on Hexagonal and Hybrid Lattices

DEFF Research Database (Denmark)

Ke, Yonggang; Voigt, Niels Vinther; Shih, William M.

2012-01-01

“Scaffolded DNA origami” has been proven to be a powerful and efficient approach to construct two-dimensional or three-dimensional objects with great complexity. Multilayer DNA origami has been demonstrated with helices packing along either honeycomb-lattice geometry or square-lattice geometry....... Here we report successful folding of multilayer DNA origami with helices arranged on a close-packed hexagonal lattice. This arrangement yields a higher density of helical packing and therefore higher resolution of spatial addressing than has been shown previously. We also demonstrate hybrid multilayer...... DNA origami with honeycomb-lattice, square-lattice, and hexagonal-lattice packing of helices all in one design. The availability of hexagonal close-packing of helices extends our ability to build complex structures using DNA nanotechnology....
Multilayer DNA origami packed on hexagonal and hybrid lattices.

Science.gov (United States)

Ke, Yonggang; Voigt, Niels V; Gothelf, Kurt V; Shih, William M

2012-01-25

"Scaffolded DNA origami" has been proven to be a powerful and efficient approach to construct two-dimensional or three-dimensional objects with great complexity. Multilayer DNA origami has been demonstrated with helices packing along either honeycomb-lattice geometry or square-lattice geometry. Here we report successful folding of multilayer DNA origami with helices arranged on a close-packed hexagonal lattice. This arrangement yields a higher density of helical packing and therefore higher resolution of spatial addressing than has been shown previously. We also demonstrate hybrid multilayer DNA origami with honeycomb-lattice, square-lattice, and hexagonal-lattice packing of helices all in one design. The availability of hexagonal close-packing of helices extends our ability to build complex structures using DNA nanotechnology. © 2011 American Chemical Society
Nanolaminated TiN/Mo2N hard multilayer coatings

International Nuclear Information System (INIS)

Martev, I N; Dechev, D A; Ivanov, N P; Uzunov, T S D; Kashchieva, E P

2010-01-01

The paper presents results on the synthesis of hard multilayer coatings consisting of titanium nitride and molybdenum nitride thin films with thickness of several nm. The TiN and Mo 2 N films were successively deposited by reactive DC magnetron sputtering. These multilayer structures were investigated by Auger electron spectroscopy (AES), transmission electron microscopy (TEM), selected area electron diffraction (SAED), X-ray diffraction (XRD), cross-section scanning electron microscopy (CSSEM) and cross-section electron probe microanalysis (CSEPMA). The mechanical properties of the multilayer coatings, namely, hardness, Young's modulus and the coefficient of plastic deformation were measured. The adhesion was evaluated by the Rockwell-C-impact test. Coatings with different total thickness were examined with respect to adhesion to substrates of tool materials.
Multilayer modal actuator-based piezoelectric transformers.

Science.gov (United States)

Huang, Yao-Tien; Wu, Wen-Jong; Wang, Yen-Chieh; Lee, Chih-Kung

2007-02-01

An innovative, multilayer piezoelectric transformer equipped with a full modal filtering input electrode is reported herein. This modal-shaped electrode, based on the orthogonal property of structural vibration modes, is characterized by full modal filtering to ensure that only the desired vibration mode is excited during operation. The newly developed piezoelectric transformer is comprised of three layers: a multilayered input layer, an insulation layer, and a single output layer. The electrode shape of the input layer is derived from its structural vibration modal shape, which takes advantage of the orthogonal property of the vibration modes to achieve a full modal filtering effect. The insulation layer possesses two functions: first, to couple the mechanical vibration energy between the input and output, and second, to provide electrical insulation between the two layers. To meet the two functions, a low temperature, co-fired ceramic (LTCC) was used to provide the high mechanical rigidity and high electrical insulation. It can be shown that this newly developed piezoelectric transformer has the advantage of possessing a more efficient energy transfer and a wider optimal working frequency range when compared to traditional piezoelectric transformers. A multilayer piezoelectric, transformer-based inverter applicable for use in LCD monitors or portable displays is presented as well.
Dependences of the Al thickness and annealing temperature on the structural, optical and electrical properties in ZnO/Al multilayers

International Nuclear Information System (INIS)

Hu, Y.M.; Lin, C.W.; Huang, J.C.A.

2006-01-01

High-quality (0001) oriented ZnO (300 A) film and [ZnO(100 A)/Al(t Al )] 3 (t Al = 0.6, 1.7, 2.8 A) multilayers have been established at room temperature on Al 2 O 3 (0001) substrates by ion-beam sputtering. The structural, optical and electrical properties of multilayers as functions of both the Al thickness and annealing temperature are reported. We have verified that Al thickness and annealing temperature are the key factors to optimize transparency-conducting property in ZnO/Al multilayers. The optimum Al thickness and annealing temperature for ZnO/Al multilayer of 300 A thin is 1.7 A (about one Al atomic layer) and 400 deg. C, respectively, leading to the relatively lower resistivity (2.8 x 10 -3 Ω cm) and higher Hall mobility (10 cm 2 /V.s) without suppression of the visible transmittance (above 85%)
Multilayer Relaxation and Surface Energies of Metallic Surfaces

Science.gov (United States)

Bozzolo, Guillermo; Rodriguez, Agustin M.; Ferrante, John

1994-01-01

The perpendicular and parallel multilayer relaxations of fcc (210) surfaces are studied using equivalent crystal theory (ECT). A comparison with experimental and theoretical results is made for AI(210). The effect of uncertainties in the input parameters on the magnitudes and ordering of surface relaxations for this semiempirical method is estimated. A new measure of surface roughness is proposed. Predictions for the multilayer relaxations and surface energies of the (210) face of Cu and Ni are also included.
Anisotropic in-plane thermal conductivity in multilayer silicene

Science.gov (United States)

Zhou, Yang; Guo, Zhi-Xin; Chen, Shi-You; Xiang, Hong-Jun; Gong, Xin-Gao

2018-06-01

We systematically study thermal conductivity of multilayer silicene by means of Boltzmann Transportation Equation (BTE) method. We find that their thermal conductivity strongly depends on the surface structures. Thermal conductivity of bilayer silicene varies from 3.31 W/mK to 57.9 W/mK with different surface structures. Also, the 2 × 1 surface reconstruction induces unusual large thermal conductivity anisotropy, which reaches 70% in a four-layer silicene. We also find that the anisotropy decreases with silicene thickness increasing, owing to the significant reduction of thermal conductivity in the zigzag direction and its slight increment in the armchair direction. Finally, we find that both the phonon-lifetime anisotropy and the phonon-group-velocity anisotropy contribute to the thermal conductivity anisotropy of multilayer silicene. These findings could be helpful in the field of heat management, thermoelectric applications involving silicene and other multilayer nanomaterials with surface reconstructions in the future.
Optimisation of multi-layer rotationally moulded foamed structures

Science.gov (United States)

Pritchard, A. J.; McCourt, M. P.; Kearns, M. P.; Martin, P. J.; Cunningham, E.

2018-05-01

Multi-layer skin-foam and skin-foam-skin sandwich constructions are of increasing interest in the rotational moulding process for two reasons. Firstly, multi-layer constructions can improve the thermal insulation properties of a part. Secondly, foamed polyethylene sandwiched between solid polyethylene skins can increase the mechanical properties of rotationally moulded structural components, in particular increasing flexural properties and impact strength (IS). The processing of multiple layers of polyethylene and polyethylene foam presents unique challenges such as the control of chemical blowing agent decomposition temperature, and the optimisation of cooling rates to prevent destruction of the foam core; therefore, precise temperature control is paramount to success. Long cooling cycle times are associated with the creation of multi-layer foam parts due to their insulative nature; consequently, often making the costs of production prohibitive. Devices such as Rotocooler®, a rapid internal mould water spray cooling system, have been shown to have the potential to significantly decrease cooling times in rotational moulding. It is essential to monitor and control such devices to minimise the warpage associated with the rapid cooling of a moulding from only one side. The work presented here demonstrates the use of threaded thermocouples to monitor the polymer melt in multi-layer sandwich constructions, in order to analyse the cooling cycle of multi-layer foamed structures. A series of polyethylene skin-foam test mouldings were produced, and the effect of cooling medium on foam characteristics, mechanical properties, and process cycle time were investigated. Cooling cycle time reductions of 45%, 26%, and 29% were found for increasing (1%, 2%, and 3%) chemical blowing agent (CBA) amount when using internal water cooling technology from ˜123°C compared with forced air cooling (FAC). Subsequently, a reduction of IS for the same skin-foam parts was found to be 1%, 4
Handling magnetic anisotropy and magnetoimpedance effect in flexible multilayers under external stress

Energy Technology Data Exchange (ETDEWEB)

Agra, K.; Bohn, F. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Mori, T.J.A. [Laboratório Nacional de Luz Síncrotron, Rua Giuseppe Máximo Scolfaro, 1000, Guará, 13083-100 Campinas, SP (Brazil); Callegari, G.L.; Dorneles, L.S. [Departamento de Física, Universidade Federal de Santa Maria, 97105-900 Santa Maria, RS (Brazil); Correa, M.A., E-mail: marciocorrea@dfte.ufrn.br [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil)

2016-12-15

We investigate the dynamic magnetic response though magnetoimpedance effect of ferromagnetic flexible NiFe/Ta and FeCuNbSiB/Ta multilayers under external stress. We explore the possibility of handling magnetic anisotropy, and consequently the magnetoimpedance effect, of magnetostrictive multilayers deposited onto flexible substrates. We quantify the sensitivity of the multilayers under external stress by calculating the ratio between impedance variations and external stress changes, and show that considerable values can be reached by tuning the magnetic field, frequency, magnetostriction constant, and external stress. The results extend possibilities of application of magnetostrictive multilayers deposited onto flexible substrates when under external stress and place them as very attractive candidates as element sensor for the development of sensitive smart touch sensors. - Highlights: • We investigate the magnetoimpedance effect in magnetostrictive flexible multilayers grown on flexible substrates. • The external applied stress enables to tuning the samples anisotropies, and consequently the MI performance. • The flexible substrate becomes promising candidate for RF-frequency devices.

Electromechanical field effect transistors based on multilayer phosphorene nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Jiang, Z.T., E-mail: jiangzhaotan@hotmail.com; Lv, Z.T.; Zhang, X.D.

2017-06-21

Based on the tight-binding Hamiltonian approach, we demonstrate that the electromechanical field effect transistors (FETs) can be realized by using the multilayer phosphorene nanoribbons (PNRs). The synergistic combination of the electric field and the external strains can establish the on–off switching since the electric field can shift or split the energy band, and the mechanical strains can widen or narrow the band widths. This kind of multilayer PNR FETs, much solider than the monolayer PNR one and more easily biased by different electric fields, has more transport channels consequently leading to the higher on–off current ratio or the higher sensitivity to the electric fields. Meanwhile, the strain-induced band-flattening will be beneficial for improving the flexibility in designing the electromechanical FETs. In addition, such electromechanical FETs can act as strain-controlled FETs or mechanical detectors for detecting the strains, indicating their potential applications in nano- and micro-electromechanical fields. - Highlights: • Electromechanical transistors are designed with multilayer phosphorene nanoribbons. • Electromechanical synergistic effect can establish the on–off switching more flexibly. • Multilayer transistors, solider and more easily biased, has more transport channels. • Electromechanical transistors can act as strain-controlled transistors or mechanical detectors.
X-ray grazing incidence diffraction from multilayers

Energy Technology Data Exchange (ETDEWEB)

Tixier, S.; Boeni, P.; Swygenhoven, H. van; Horisberger, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

1997-09-01

Grazing incidence scattering geometries using synchrotron radiation have been applied in order to characterise the roughness profiles and the structural coherence of multilayers. The lateral correlation length of the roughness profiles was evaluated using diffuse reflectivity in the `out of plane` geometry. This type of measurement is the only diffuse reflectivity technique allowing large lateral momentum transfer. It is typically suitable for correlation lengths smaller than 1000 A. The lateral structural coherence length of Ni{sub 3}Al/Ni multilayers as a function of the layer thickness was obtained by grazing incidence diffraction (GID). 3 figs., 1 ref.
Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

International Nuclear Information System (INIS)

Sun Ya-Bin; Li Xiao-Jin; Zhang Jin-Zhong; Shi Yan-Ling

2017-01-01

In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts: a link base region under a spacer oxide, an intrinsic transistor region under the emitter window, and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the small-signal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node, which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model. (paper)
A novel multilayer model for missing link prediction and future link forecasting in dynamic complex networks

Science.gov (United States)

Yasami, Yasser; Safaei, Farshad

2018-02-01

The traditional complex network theory is particularly focused on network models in which all network constituents are dealt with equivalently, while fail to consider the supplementary information related to the dynamic properties of the network interactions. This is a main constraint leading to incorrect descriptions of some real-world phenomena or incomplete capturing the details of certain real-life problems. To cope with the problem, this paper addresses the multilayer aspects of dynamic complex networks by analyzing the properties of intrinsically multilayered co-authorship networks, DBLP and Astro Physics, and presenting a novel multilayer model of dynamic complex networks. The model examines the layers evolution (layers birth/death process and lifetime) throughout the network evolution. Particularly, this paper models the evolution of each node's membership in different layers by an Infinite Factorial Hidden Markov Model considering feature cascade, and thereby formulates the link generation process for intra-layer and inter-layer links. Although adjacency matrixes are useful to describe the traditional single-layer networks, such a representation is not sufficient to describe and analyze the multilayer dynamic networks. This paper also extends a generalized mathematical infrastructure to address the problems issued by multilayer complex networks. The model inference is performed using some Markov Chain Monte Carlo sampling strategies, given synthetic and real complex networks data. Experimental results indicate a tremendous improvement in the performance of the proposed multilayer model in terms of sensitivity, specificity, positive and negative predictive values, positive and negative likelihood ratios, F1-score, Matthews correlation coefficient, and accuracy for two important applications of missing link prediction and future link forecasting. The experimental results also indicate the strong predictivepower of the proposed model for the application of
Preparation of multilayered nanocrystalline thin films with composition-modulated interfaces

International Nuclear Information System (INIS)

Biro, D.; Barna, P.B.; Szekely, L.; Geszti, O.; Hattori, T.; Devenyi, A.

2008-01-01

The properties of multilayer thin film structures depend on the morphology and structure of interfaces. A broad interface, in which the composition is varying, can enhance, e.g., the hardness of multilayer thin films. In the present experiments multilayers of TiAlN and CrN as well as TiAlN, CrN and MoS 2 were studied by using unbalanced magnetron sputter sources. The sputter sources were arranged side by side on an arc. This arrangement permits development of a transition zone between the layers, where the composition changes continuously. The multilayer system was deposited by one-fold oscillating movement of substrates in front of sputter sources. Thicknesses of layers could be changed both by oscillation frequency and by the power applied to sputter sources. Ti/Al: 50/50 at%, pure chromium and MoS 2 targets were used in the sputter sources. The depositions were performed in an Ar-N 2 mixture at 0.22 Pa working pressure. The sputtering power of the TiAl source was feed-back adjusted in fuzzy-logic mode in order to avoid fluctuation of the TiAl target sputter rate due to poisoning of the target surface. Structure characterization of films deposited on Si wafers covered by thermally grown SiO 2 was performed by cross-sectional transmission electron microscopy. At first a 100 nm thick Cr base layer was deposited on the substrate to improve adhesion, which was followed by a CrN transition layer. The CrN transition layer was followed by a 100 nm thick TiAlN/CrN multilayer system. The TiAlN/CrN/MoS 2 multilayer system was deposited on the surface of this underlayer system. The underlayer systems Cr, CrN and TiAlN/CrN were crystalline with columnar structure according to the morphology of zone T of the structure zone models. The column boundaries contained segregated phases showing up in the under-focused TEM images. The surface of the underlayer system was wavy due to dome-shaped columns. The nanometer-scaled TiAlN/CrN/MoS 2 multilayer system followed this waviness
Ultra-short-period WC/SiC multilayer coatings for x-ray applications

International Nuclear Information System (INIS)

Fernández-Perea, Mónica; Pivovaroff, Mike J.; Soufli, Regina; Alameda, Jennifer; Mirkarimi, Paul; Descalle, Marie-Anne; Baker, Sherry L.; McCarville, Tom; Ziock, Klaus; Hornback, Donald; Romaine, Suzanne; Bruni, Ric; Zhong, Zhong; Honkimäki, Veijo; Ziegler, Eric; Christensen, Finn E.; Jakobsen, Anders C.

2013-01-01

Multilayer coatings enhance x-ray mirror performance at incidence angles steeper than the critical angle, allowing for improved flux, design flexibility and facilitating alignment. In an attempt to extend the use of multilayer coatings to photon energies higher than previously achieved, we have developed multilayers with ultra-short periods between 1 and 2 nm based on the material system WC/SiC. This material system was selected because it possesses very sharp and stable interfaces. In this article, we show highlights from a series of experiments performed in order to characterize the stress, microstructure and morphology of the multilayer films, as well as their reflective performance at photon energies from 8 to 384 keV
Synchronous determination of mercury (II) and copper (II) based on quantum dots-multilayer film

International Nuclear Information System (INIS)

Ma Qiang; Ha Enna; Yang Fengping; Su Xingguang

2011-01-01

Graphical abstract: We developed a sensitive sensor for synchronous detection of Hg (II) and Cu (II) based on the quenchedand recovered PL intensity of QDs-multilayer films. Solutions containing Hg (II) or Cu (II) were used to quench the fluorescence of the QDs-multilayer films firstly. Then, glutathione (GSH) was used to remove Hg (II) or Cu (II) from the QDs-multilayer films due to stronger affinity of GSH-metal ions than that of QDs metal ions. Thus, the fluorescence of QDs-multilayer films was recovered. Highlights: → QDs-multilayer films were developed for synchronous detection of Hg (II) and Cu (II). → Hg (II) and Cu (II) could quench the photoluminescence of the QDs-multilayer films. → Glutathione was used to remove metal ions and recovery photoluminescence of QDs-multilayer films. - Abstract: A sensitive sensor for mercury (II) and copper (II) synchronous detection was established via the changed photoluminescence of CdTe quantum dots (QDs) multilayer films in this work. QDs were deposited on the quartz slides to form QDs-multilayer films by electrostatic interactions with poly(dimethyldiallyl ammonium chloride) (PDDA). Hg 2+ or Cu 2+ could quench the photoluminescence of the QDs-multilayer films, and glutathione (GSH) was used to remove Hg 2+ or Cu 2+ from QDs-multilayer films due to strong affinity of GSH-metal ions, which resulted in the recovered photoluminescence of QDs-multilayer films. There are good linear relationships between the metal ions concentration and the photoluminescence intensity of QDs in the quenched and recovered process. It was found that the Stern-Volmer constants for Hg 2+ are higher than that for Cu 2+ . Based on different quenching and recovery constant between Hg 2+ and Cu 2+ , the synchronous detection of Hg 2+ and Cu 2+ can be achieved. The linear ranges of this assay were obtained from 0.005 to 0.5 μM for Hg 2+ and from 0.01 to 1 μM for Cu 2+ , respectively. And the artificial water samples were determined by this
Near-field heat transfer between graphene/hBN multilayers

Science.gov (United States)

Zhao, Bo; Guizal, Brahim; Zhang, Zhuomin M.; Fan, Shanhui; Antezza, Mauro

2017-06-01

We study the radiative heat transfer between multilayer structures made by a periodic repetition of a graphene sheet and a hexagonal boron nitride (hBN) slab. Surface plasmons in a monolayer graphene can couple with hyperbolic phonon polaritons in a single hBN film to form hybrid polaritons that can assist photon tunneling. For periodic multilayer graphene/hBN structures, the stacked metallic/dielectric array can give rise to a further effective hyperbolic behavior, in addition to the intrinsic natural hyperbolic behavior of hBN. The effective hyperbolicity can enable more hyperbolic polaritons that enhance the photon tunneling and hence the near-field heat transfer. However, the hybrid polaritons on the surface, i.e., surface plasmon-phonon polaritons, dominate the near-field heat transfer between multilayer structures when the topmost layer is graphene. The effective hyperbolic regions can be well predicted by the effective medium theory (EMT), thought EMT fails to capture the hybrid surface polaritons and results in a heat transfer rate much lower compared to the exact calculation. The chemical potential of the graphene sheets can be tuned through electrical gating and results in an additional modulation of the heat transfer. We found that the near-field heat transfer between multilayer structures does not increase monotonously with the number of layers in the stack, which provides a way to control the heat transfer rate by the number of graphene layers in the multilayer structure. The results may benefit the applications of near-field energy harvesting and radiative cooling based on hybrid polaritons in two-dimensional materials.
A multilayer approach for turbidity currents

Science.gov (United States)

Fernandez-Nieto, Enrique; Castro Díaz, Manuel J.; Morales de Luna, Tomás

2017-04-01

When a river that carries sediment in suspension enters into a lake or the ocean it can form a plume that can be classified as hyperpycnal or hypopycnal. Hypopycnal plumes occurs if the combined density of the sediment and interstitial fluid is lower than that of the ambient. Hyperpycnal plumes are a class of sediment-laden gravity current commonly referred to as turbidity currents [7,9]. Some layer-averaged models have been previously developed (see [3, 4, 8] among others). Although this layer-averaged approach gives a fast and valuable information, it has the disadvantage that the vertical distribution of the sediment in suspension is lost. A recent technique based on a multilayer approach [1, 2, 6] has shown to be specially useful to generalize shallow water type models in order to keep track of the vertical components of the averaged variables in the classical shallow water equations. In [5] multilayer model is obtained using a vertical discontinuous Galerkin approach for which the vertical velocity is supposed to be piecewise linear and the horizontal velocity is supposed to be piecewise constant. In this work the technique introduced in [5] is generalized to derive a model for turbidity currents. This model allows to simulate hyperpycnal as well as hypopycnal plumes. Several numerical tests will be presented. References [1] E. Audusse, M. Bristeau, B. Perthame, and J. Sainte-Marie. A multilayer Saint-Venant system with mass exchanges for shallow water flows. derivation and numerical validation. ESAIM: Mathematical Modelling and Numerical Analysis, 45(1):169-200, (2010). [2] E. Audusse, M.-O. Bristeau, M. Pelanti, and J. Sainte-Marie. Approximation of the hydrostatic Navier‚ÄìStokes system for density stratified flows by a multilayer model: Kinetic interpretation and numerical solution. Journal of Computational Physics, 230(9):3453-3478, (2011). [3] S. F. Bradford and N. D. Katopodes. Hydrodynamics of turbid underflows. i: Formulation and numerical
Comparing multilayer brain networks between groups: Introducing graph metrics and recommendations.

Science.gov (United States)

Mandke, Kanad; Meier, Jil; Brookes, Matthew J; O'Dea, Reuben D; Van Mieghem, Piet; Stam, Cornelis J; Hillebrand, Arjan; Tewarie, Prejaas

2018-02-01

There is an increasing awareness of the advantages of multi-modal neuroimaging. Networks obtained from different modalities are usually treated in isolation, which is however contradictory to accumulating evidence that these networks show non-trivial interdependencies. Even networks obtained from a single modality, such as frequency-band specific functional networks measured from magnetoencephalography (MEG) are often treated independently. Here, we discuss how a multilayer network framework allows for integration of multiple networks into a single network description and how graph metrics can be applied to quantify multilayer network organisation for group comparison. We analyse how well-known biases for single layer networks, such as effects of group differences in link density and/or average connectivity, influence multilayer networks, and we compare four schemes that aim to correct for such biases: the minimum spanning tree (MST), effective graph resistance cost minimisation, efficiency cost optimisation (ECO) and a normalisation scheme based on singular value decomposition (SVD). These schemes can be applied to the layers independently or to the multilayer network as a whole. For correction applied to whole multilayer networks, only the SVD showed sufficient bias correction. For correction applied to individual layers, three schemes (ECO, MST, SVD) could correct for biases. By using generative models as well as empirical MEG and functional magnetic resonance imaging (fMRI) data, we further demonstrated that all schemes were sensitive to identify network topology when the original networks were perturbed. In conclusion, uncorrected multilayer network analysis leads to biases. These biases may differ between centres and studies and could consequently lead to unreproducible results in a similar manner as for single layer networks. We therefore recommend using correction schemes prior to multilayer network analysis for group comparisons. Copyright © 2017 Elsevier
"{Deposition and characterization of multilayers on thin foil x-ray

DEFF Research Database (Denmark)

Hussain, A.M.; Joensen, K.D.; Hoeghoej, P.

1996-01-01

W/Si and Co/C multilayers have been deposited on epoxy- replicated Au mirrors from the ASTRO-E telescope project, SPectrum Roentgen Gamma (SRG) flight mirrors, DURAN glass substrates and Si witness wafers. A characterization of the multilayers with both hard x-rays and soft x-rays is presented. T...
Improvement of Wear Performance of Nano-Multilayer PVD Coatings under Dry Hard End Milling Conditions Based on Their Architectural Development

Directory of Open Access Journals (Sweden)

Shahereen Chowdhury

2018-02-01

Full Text Available The TiAlCrSiYN-based family of PVD (physical vapor deposition hard coatings was specially designed for extreme conditions involving the dry ultra-performance machining of hardened tool steels. However, there is a strong potential for further advances in the wear performance of the coatings through improvements in their architecture. A few different coating architectures (monolayer, multilayer, bi-multilayer, bi-multilayer with increased number of alternating nano-layers were studied in relation to cutting-tool life. Comprehensive characterization of the structure and properties of the coatings has been performed using XRD, SEM, TEM, micro-mechanical studies and tool-life evaluation. The wear performance was then related to the ability of the coating layer to exhibit minimal surface damage under operation, which is directly associated with the various micro-mechanical characteristics (such as hardness, elastic modulus and related characteristics; nano-impact; scratch test-based characteristics. The results presented exhibited that a substantial increase in tool life as well as improvement of the mechanical properties could be achieved through the architectural development of the coatings.
Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

Science.gov (United States)

Vandersande, Jan W.; Wood, Charles; Draper, Susan

1987-01-01

Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.
Designing multilayered nanoplatforms for SERS-based detection of genetically modified organisms

Science.gov (United States)

Uluok, Saadet; Guven, Burcu; Eksi, Haslet; Ustundag, Zafer; Tamer, Ugur; Boyaci, Ismail Hakki

2015-01-01

In this study, the multilayered surface-enhanced Raman spectroscopy (SERS) platforms were developed for the analysis of genetically modified organisms (GMOs). For this purpose, two molecules [11-mercaptoundecanoic acid (11-MUA) and 2-mercaptoethylamine (2-MEA)] were attached with Aurod and Auspherical nanoparticles to form multilayered constructions on the gold (Au)slide surface. The best multilayered platform structure was chosen depending on SERS enhancement, and this surface was characterised with atomic force microscopy (AFM) and attenuated total reflectance Fourier transform infrared spectroscopy. After the optimum multilayered SERS platform and nanoparticle interaction was identified, the oligonucleotides on the Aurod nanoparticles and Auslide were combined to determine target concentrations from the 5,5'-dithiobis (2-nitrobenzoic acid) (DTNB) signals using SERS. The correlation between the SERS intensities for DTNB and target concentrations was found to be linear within a range of 10 pM to 1 µM, and with a detection limit of 34 fM. The selectivity and specificity of the developed sandwich assay were tested using negative and positive controls, and nonsense and real sample studies. The obtained results showed that the multilayered SERS sandwich method allows for sensitive, selective, and specific detection of oligonucleotide sequences.
Realistic absorption coefficient of each individual film in a multilayer architecture

Science.gov (United States)

Cesaria, M.; Caricato, A. P.; Martino, M.

2015-02-01

A spectrophotometric strategy, termed multilayer-method (ML-method), is presented and discussed to realistically calculate the absorption coefficient of each individual layer embedded in multilayer architectures without reverse engineering, numerical refinements and assumptions about the layer homogeneity and thickness. The strategy extends in a non-straightforward way a consolidated route, already published by the authors and here termed basic-method, able to accurately characterize an absorbing film covering transparent substrates. The ML-method inherently accounts for non-measurable contribution of the interfaces (including multiple reflections), describes the specific film structure as determined by the multilayer architecture and used deposition approach and parameters, exploits simple mathematics, and has wide range of applicability (high-to-weak absorption regions, thick-to-ultrathin films). Reliability tests are performed on films and multilayers based on a well-known material (indium tin oxide) by deliberately changing the film structural quality through doping, thickness-tuning and underlying supporting-film. Results are found consistent with information obtained by standard (optical and structural) analysis, the basic-method and band gap values reported in the literature. The discussed example-applications demonstrate the ability of the ML-method to overcome the drawbacks commonly limiting an accurate description of multilayer architectures.
Ring-dot-shaped multilayer piezoelectric step-down transformers using PZT-based ceramics

Energy Technology Data Exchange (ETDEWEB)

Kim, Insung; Joo, Hyeonkyu; Song, Jaesung; Jeong, Soonjong; Kim, Minsoo [Korea Electrotechnology Research Institute, Changwon (Korea, Republic of)

2010-10-15

In this study, multilayer piezo stack transformers for switching mode power supply (SMPS) application were manufactured using 0.01Pb(Ni{sub 1/3}Nb{sub 2/3})O{sub 3} - 0.08Pb(Mn{sub 1/3}Nb{sub 2/3})O{sub 3} - 0.91Pb(Zr{sub 0.505}Ti{sub 0.495})O{sub 3} (PNN-PMN-PZT) ceramics. The voltage ratio of a multilayer piezo stack transformer showed a maximum at the resonance frequency of the input and then increased with increasing load resistance. The efficiency of the multilayer piezo stack transformer showed its highest value at around the matching load. The output power increased with increasing input voltage. The temperature of the multilayer piezo stack transformer increased with increasing output power and load resistance. The manufactured multilayer piezo stack transformer could be used up to 5 W at a resonance frequency of 70.25 kHz for SMPS application because the temperature rise from room temperature is believed to about 20 .deg. C and because the transformer is electrically stable. The newly-developed ring-dot-type step-down multilayer piezo stack transformer shows possible applications as SMPS for electronic power sources with excellent input-to-output properties.
Mo/Si multilayers with enhanced TiO II- and RuO II-capping layers

Science.gov (United States)

Yulin, Sergiy; Benoit, Nicolas; Feigl, Torsten; Kaiser, Norbert; Fang, Ming; Chandhok, Manish

2008-03-01

The lifetime of Mo/Si multilayer-coated projection optics is one of the outstanding issues on the road of commercialization of extreme-ultraviolet lithography (EUVL). The application of Mo/Si multilayer optics in EUVL requires both sufficient radiation stability and also the highest possible normal-incidence reflectivity. A serious problem of conventional high-reflective Mo/Si multilayers capped by silicon is the considerable degradation of reflective properties due to carbonization and oxidation of the silicon surface layer under exposure by EUV radiation. In this study, we focus on titanium dioxide (TiO II) and ruthenium dioxide (RuO II) as promising capping layer materials for EUVL multilayer coatings. The multilayer designs as well as the deposition parameters of the Mo/Si systems with different capping layers were optimized in terms of maximum peak reflectivity at the wavelength of 13.5 nm and longterm stability under high-intensive irradiation. Optimized TiO II-capped Mo/Si multilayer mirrors with an initial reflectivity of 67.0% presented a reflectivity drop of 0.6% after an irradiation dose of 760 J/mm2. The reflectivity drop was explained by the partial oxidation of the silicon sub-layer. No reflectivity loss after similar irradiation dose was found for RuO II-capped Mo/Si multilayer mirrors having initial peak reflectivity of 66%. In this paper we present data on improved reflectivity of interface-engineered TiO II- and RuO II-capped Mo/Si multilayer mirrors due to the minimization of both interdiffusion processes inside the multilayer stack and absorption loss in the oxide layer. Reflectivities of 68.5% at the wavelength of 13.4 nm were achieved for both TiO II- and RuO II-capped Mo/Si multilayer mirrors.
Reusable fluorescent sensor for captopril based on energy transfer from photoluminescent graphene oxide self-assembly multilayers to silver nanoparticles.

Science.gov (United States)

Sun, Xiangying; Liu, Bin; Li, Shuchun; Li, Fang

2016-05-15

In this work we designed a self-assembly multilayers, in which photoluminescent graphene oxide was employed as a fluorescence probe. This multilayers film can effectively recognize captopril by resonance energy transfer from graphite oxide to silver nanoparticles. A new interfacial sensing method for captopril with high signal to noise ratio was established, by means of that multilayers was quenched by silver nanoparticles and subsequently recovered by adding captopril. The linear relation between intensity and captopril concentration was good, and the detection limit was found to be 0.1578 μM. Also, this novel detection platform demonstrated intriguing reusable properties, and the sensor could be repeated more than ten times without obviously losing its sensing performance. Copyright © 2016 Elsevier B.V. All rights reserved.
Heuristic urban transportation network design method, a multilayer coevolution approach

Science.gov (United States)

Ding, Rui; Ujang, Norsidah; Hamid, Hussain bin; Manan, Mohd Shahrudin Abd; Li, Rong; Wu, Jianjun

2017-08-01

The design of urban transportation networks plays a key role in the urban planning process, and the coevolution of urban networks has recently garnered significant attention in literature. However, most of these recent articles are based on networks that are essentially planar. In this research, we propose a heuristic multilayer urban network coevolution model with lower layer network and upper layer network that are associated with growth and stimulate one another. We first use the relative neighbourhood graph and the Gabriel graph to simulate the structure of rail and road networks, respectively. With simulation we find that when a specific number of nodes are added, the total travel cost ratio between an expanded network and the initial lower layer network has the lowest value. The cooperation strength Λ and the changeable parameter average operation speed ratio Θ show that transit users' route choices change dramatically through the coevolution process and that their decisions, in turn, affect the multilayer network structure. We also note that the simulated relation between the Gini coefficient of the betweenness centrality, Θ and Λ have an optimal point for network design. This research could inspire the analysis of urban network topology features and the assessment of urban growth trends.
Spin-resolved unpolarized neutron off-specular scattering for magnetic multilayer studies

CERN Document Server

Lauter, H J; Toperverg, B P; Romashev, L; Ustinov, V; Kravtsov, E; Vorobiev, A; Major, J; Nikonov, O A

2002-01-01

The capabilities of the method of using unpolarized neutron off-specular scattering for investigation of magnetic structures in exchange-coupled magnetic multilayers are thoroughly examined. It is demonstrated that strong anomalies in spin-flip selective scattering processes originating from magnetic fluctuations enables a straightforward determination of the coupling angle between the magnetization direction of successive Fe layers in Fe/Cr multilayers. A complete quantitative 2-dimensional data analysis of specular and off-specular scattering has been employed to provide detailed information on the lateral and transverse magnetization arrangement in the multilayer. (orig.)

Suspended mid-infrared fiber-to-chip grating couplers for SiGe waveguides

Science.gov (United States)

Favreau, Julien; Durantin, Cédric; Fédéli, Jean-Marc; Boutami, Salim; Duan, Guang-Hua

2016-03-01

Silicon photonics has taken great importance owing to the applications in optical communications, ranging from short reach to long haul. Originally dedicated to telecom wavelengths, silicon photonics is heading toward circuits handling with a broader spectrum, especially in the short and mid-infrared (MIR) range. This trend is due to potential applications in chemical sensing, spectroscopy and defense in the 2-10 μm range. We previously reported the development of a MIR photonic platform based on buried SiGe/Si waveguide with propagation losses between 1 and 2 dB/cm. However the low index contrast of the platform makes the design of efficient grating couplers very challenging. In order to achieve a high fiber-to-chip efficiency, we propose a novel grating coupler structure, in which the grating is locally suspended in air. The grating has been designed with a FDTD software. To achieve high efficiency, suspended structure thicknesses have been jointly optimized with the grating parameters, namely the fill factor, the period and the grating etch depth. Using the Efficient Global Optimization (EGO) method we obtained a configuration where the fiber-to-waveguide efficiency is above 57 %. Moreover the optical transition between the suspended and the buried SiGe waveguide has been carefully designed by using an Eigenmode Expansion software. Transition efficiency as high as 86 % is achieved.
Anomalous magnetoresistance in Fibonacci multilayers.

Energy Technology Data Exchange (ETDEWEB)

Machado, L. D.; Bezerra, C. G.; Correa, M. A.; Chesman, C.; Pearson, J. E.; Hoffmann, A. (Materials Science Division); (Universidade Federal do Rio Grande do Norte)

2012-01-01

We theoretically investigated magnetoresistance curves in quasiperiodic magnetic multilayers for two different growth directions, namely, [110] and [100]. We considered identical ferromagnetic layers separated by nonmagnetic layers with two different thicknesses chosen based on the Fibonacci sequence. Using parameters for Fe/Cr multilayers, four terms were included in our description of the magnetic energy: Zeeman, cubic anisotropy, bilinear coupling, and biquadratic coupling. The minimum energy was determined by the gradient method and the equilibrium magnetization directions found were used to calculate magnetoresistance curves. By choosing spacers with a thickness such that biquadratic coupling is stronger than bilinear coupling, unusual behaviors for the magnetoresistance were observed: (i) for the [110] case, there is a different behavior for structures based on even and odd Fibonacci generations, and, more interesting, (ii) for the [100] case, we found magnetic field ranges for which the magnetoresistance increases with magnetic field.
Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35microm SiGe BiCMOS technology

International Nuclear Information System (INIS)

Niu, G.; Mathew, S.J.; Banerjee, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Subbanna, S.

1999-01-01

The effects of gamma irradiation on the Shallow-Trench Isolation (STI) leakage currents in a SiGe BiCMOS technology are investigated for the first time, and shown to be strongly dependent on the irradiation gate bias and operating substrate bias. A positive irradiation gate bias significantly enhances the STI leakage, suggesting a strong field assisted nature of the charge buildup process in the STI. Numerical simulations also suggest the existence of fixed positive charges deep in the bulk along the STI/Si interface. A negative substrate bias, however, effectively suppresses the STI leakage, and can be used to eliminate the leakage produced by the charges deep in the bulk under irradiation
Surface modification of multilayer graphene using Ga ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shao, Ying; Ge, Daohan; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Qizhi [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State key laboratory of Robotics, Chinese Academy of Sciences, Shengyang 110000 (China)

2015-04-28

The effect of Ga ion irradiation intensity on the surface of multilayer graphene was examined. Using Raman spectroscopy, we determined that the irradiation caused defects in the crystal structure of graphene. The density of defects increased with the increase in dwell times. Furthermore, the strain induced by the irradiation changed the crystallite size and the distance between defects. These defects had the effect of doping the multilayer graphene and increasing its work function. The increase in work function was determined using contact potential difference measurements. The surface morphology of the multilayer graphene changed following irradiation as determined by atomic force microscopy. Additionally, the adhesion between the atomic force microscopy tip and sample increased further indicating that the irradiation had caused surface modification, important for devices that incorporate graphene.
Design considerations for energy efficient, resilient, multi-layer networks

DEFF Research Database (Denmark)

Fagertun, Anna Manolova; Hansen, Line Pyndt; Ruepp, Sarah Renée

2016-01-01

measures. In this complex problem, considerations such as client traffic granularity, applied grooming policies and multi-layer resiliency add even more complexity. A commercially available network planning tool is used to investigate the interplay between different methods for resilient capacity planning......This work investigates different network design considerations with respect to energy-efficiency, under green-field resilient multi-layer network deployment. The problem of energy efficient, reliable multi-layer network design is known to result in different trade-offs between key performance....... Switching off low-utilized transport links has been investigated via a pro-active re-routing applied during the network planning. Our analysis shows that design factors such as the applied survivability strategy and the applied planning method have higher impact on the key performance indicators compared...
Multilayer Photonic Crystal for Spectral Narrowing of Emission

Directory of Open Access Journals (Sweden)

Zhanfang LIU

2017-08-01

Full Text Available Multilayer colloidal crystal has been prepared by the layer-by-layer deposition of silica microspheres on a glass slide. Each layer is a slab consisting of a fcc close-packed colloidal arrays. By properly choosing the sizes of spheres, the whole spectral feature of multilayer colloidal crystal can be tuned. Here, we engineered a multilayer superlattice structure with an effective passband between two stop bands. This gives a strong narrowing effect on emission spectrum. With the stop bands at the shortwave and longwave edges of emission spectrum, the passband in the central wavelength region can be regarded as a strong decrease of suppression effect and enhancement of a narrow wavelength region of emission. The spectral narrowing modification effect of suitably engineered colloidal crystals shows up their importance in potential application as optical filters and lasing devices.DOI: http://dx.doi.org/10.5755/j01.ms.23.3.16320
Research on the Multilayer Free Damping Structure Design

Directory of Open Access Journals (Sweden)

Jie Meng

2018-01-01

Full Text Available The aim of this paper is to put forward a design model for multilayer free damping structures. It sets up a mathematical model and deduces the formula for its structural loss factor η and analyzes the change rules of η along with the change rate of the elastic modulus ratio q1, the change rate of the loss factors of damping materials q2, and the change rate of the layer thickness ratio q3 under the condition with the layer thickness ratio h2=1,3,5,10 by software MATLAB. Based on three specific damping structures, the mathematical model is verified through ABAQUS. With the given structural loss factor (η≥2 and the layer number (n=3,4,5,6, 34 kinds of multilayer free damping structures are then presented. The study is meant to provide a more flexible and more diverse design solution for multilayer free damping structures.
Three dimensional multilayer solenoid microcoils inside silica glass

Science.gov (United States)

Meng, Xiangwei; Yang, Qing; Chen, Feng; Shan, Chao; Liu, Keyin; Li, Yanyang; Bian, Hao; Si, Jinhai; Hou, Xun

2016-01-01

Three dimensional (3D) solenoid microcoils could generate uniform magnetic field. Multilayer solenoid microcoils are highly pursued for strong magnetic field and high inductance in advanced magnetic microsystems. However, the fabrication of the 3D multilayer solenoid microcoils is still a challenging task. In this paper, 3D multilayer solenoid microcoils with uniform diameters and high aspect ratio were fabricated in silica glass. An alloy (Bi/In/Sn/Pb) with high melting point was chosen as the conductive metal to overcome the limitation of working temperature and improve the electrical property. The inductance of the three layers microcoils was measured, and the value is 77.71 nH at 100 kHz and 17.39 nH at 120 MHz. The quality factor was calculated, and it has a value of 5.02 at 120 MHz. This approach shows an improvement method to achieve complex 3D metal microstructures and electronic components, which could be widely integrated in advanced magnetic microsystems.
Multilayer gyroid cubic membrane organization in green alga Zygnema.

Science.gov (United States)

Zhan, Ting; Lv, Wenhua; Deng, Yuru

2017-09-01

Biological cubic membranes (CM), which are fluid membranes draped onto the 3D periodic parallel surface geometries with cubic symmetry, have been observed within subcellular organelles, including mitochondria, endoplasmic reticulum, and thylakoids. CM transition tends to occur under various stress conditions; however, multilayer CM organizations often appear associated with light stress conditions. This report is about the characterization of a projected gyroid CM in a transmission electron microscopy study of the chloroplast membranes within green alga Zygnema (LB923) whose lamellar form of thylakoid membrane started to fold into multilayer gyroid CM in the culture at the end of log phase of cell growth. Using the techniques of computer simulation of transmission electron microscopy (TEM) and a direct template matching method, we show that these CM are based on the gyroid parallel surfaces. The single, double, and multilayer gyroid CM morphologies are observed in which space is continuously divided into two, three, and more subvolumes by either one, two, or several parallel membranes. The gyroid CM are continuous with varying amount of pseudo-grana with lamellar-like morphology. The relative amount and order of these two membrane morphologies seem to vary with the age of cell culture and are insensitive to ambient light condition. In addition, thylakoid gyroid CM continuously interpenetrates the pyrenoid body through stalk, bundle-like, morphologies. Inside the pyrenoid body, the membranes re-folded into gyroid CM. The appearance of these CM rearrangements due to the consequence of Zygnema cell response to various types of environmental stresses will be discussed. These stresses include nutrient limitation, temperature fluctuation, and ultraviolet (UV) exposure.
PRESSURE-IMPULSE DIAGRAM OF MULTI-LAYERED ALUMINUM FOAM PANELS UNDER BLAST PRESSURE

Directory of Open Access Journals (Sweden)

CHANG-SU SHIM

2013-06-01

Full Text Available Anti-terror engineering has increasing demand in construction industry, but basis of design (BOD is normally not clear for designers. Hardening of structures has limitations when design loads are not defined. Sacrificial foam claddings are one of the most efficient methods to protect blast pressure. Aluminum foam can have designed yield strength according to relative density and mitigate the blast pressure below a target transmitted pressure. In this paper, multi-layered aluminum foam panels were proposed to enhance the pressure mitigation by increasing effective range of blast pressure. Through explicit finite element analyses, the performance of blast pressure mitigation by the multi-layered foams was evaluated. Pressure-impulse diagrams for the foam panels were developed from extensive analyses. Combination of low and high strength foams showed better applicability in wider range of blast pressure.
Multilayer sulfur-resistant composite metal membranes and methods of making and repairing the same

Science.gov (United States)

Way, J. Douglas; Hatlevik, Oyvind

2014-07-15

The invention relates to thin, hydrogen-permeable, sulfur-resistant membranes formed from multi-layers of palladium or palladium-alloy coatings on porous, ceramic or metal supports, methods of making these membranes, methods of repairing layers of these membranes and devices that incorporate these membranes.
Fabrication and Characteristics of Al/PTFE Multilayers and Application in Micro-initiator

Science.gov (United States)

Zhang, Yuxin; Jiang, Hongchuan; Zhao, Xiaohui; Zhang, Wanli; Li, Yanrong

2017-12-01

In this paper, a micro-initiator was designed and fabricated by integrating Al/PTFE multilayers with a Cu film bridge. The regularity layer structure and interface composition of Al/PTFE multilayers was analysed by transmission electron microscope and X-ray photoelectron spectroscopy, respectively. The heat release reaction in Al/PTFE multilayers can be triggered with reaction temperature of 430 °C, and the overall heat of reaction is 3192 J/g. Al/PTFE multilayers with bilayer thickness of 200 nm was alternately deposited on a Cu film bridge to improve the electric explosion performances. Compared to Cu film bridge, the Al/PTFE/Cu integrated film bridge exhibits improved performances with longer explosion duration time, more violent explosion phenomenon and larger quantities of ejected product particles.
Structural evolution of Ti/TiC multilayers

International Nuclear Information System (INIS)

Dahan, I.; Frage, N.; Dariel, M.P.

2004-01-01

Hard coatings based on metal/ceramic multilayers with periods in the nanometer range have been shown to possess some potential for improved tribological and mechanical properties. The present work is concerned with the structural evolution of (Ti/TiC) multilayers. Two kinds of multilayers consisting of 30 equithick (40 nm)TiC layers and 20 and 60 nm thick Ti layers, respectively, were sputter deposited on Mo substrates. The structural and the compositional evolution of these multilayers were examined by x-ray diffraction, transition electron microscopy (TEM), high-resolution TEM, Auger electron microscopy spectroscopy and differential thermal analysis (DTA), in the as-deposited state and after various heat treatments up to 500 deg. C. Initially, the Ti layers had a crystalline columnar grain structure displaying a (002) texture. The TiC layers displayed weak crystallinity with a pronounced (111) texture. In the course of the heat treatments, carbon diffused from the carbide layer into the adjacent Ti layers transforming the latter into off-stoichiometric TiC x with x≅0.5 and simultaneously depleting the carbon content of the initial carbide layer. The formed TiC x layers maintained the textural relationship with the neighboring TiC layers, consistent with a transformation that involved only a ABAB to ABC stacking change of the Ti sublattice. Increased mobility of the Ti atoms in carbon-depleted original TiC layers led to their full or partial recrystallization. The thermal effects associated both with the transformation of Ti layers into TiC, due to the influx of carbon atoms, and with the recrystallization of the original TiC layers were clearly revealed by the DTA measurements
Mechanical performance of Hi-Nicalon/CVI-SiC composites with multilayer SiC/C interfaces

Energy Technology Data Exchange (ETDEWEB)

Halverson, H.G.; Carter, R.H.; Curtin, W.A. [Virginia Polytechnic Inst. and State Univ., Blacksburg, VA (United States). Dept. of Engineering Science and Mechanics

1997-12-01

The mechanical properties and interfacial characteristics of new SiC/SiC ceramic composites, composed of Hi-Nicalon fibers in a CVI-SiC matrix and having a variety of multilayer SiC/C coatings between the fibers and the matrix, are studied in detail to elucidate the roles of the coatings and fibers. Axial tension tests and unload/reload hysteresis loop measurements are performed to determine mechanical performance. All materials exhibit the strong and tough behavior characteristic of good ceramic composites, with all multilayer variants performing quite similarly. SEM microscopy demonstrates that matrix cracks penetrate through the multilayers and debond at the fiber/inner-coating interface. Analysis of the hysteretic behavior leads to values for interfacial sliding resistance {tau} {approx} 11 ksi and interfacial toughness {Gamma}{sub i} {approx} 2 J/m{sup 2} that are nearly independent of multilayer structure, and are similar to values obtained for standard pyrolitic carbon interfaces. These results all indicate debonding at the fiber surface for all coating structures, which provides a common roughness, {tau}, and {Gamma}{sub i}. Analysis of fiber fracture mirrors provides an estimate of the in-situ strength of the fibers and demonstrates the high strength retention of the Hi-Nicalon fibers. The in-situ fiber strengths are combined with the measured pullout lengths to obtain an independent determination of {tau} = 8.5 ksi that agrees well with the value found from the hysteretic behavior. Predictions of composite strength using the derived fiber strengths agree well with the measured value although the predicted failure strain is too large. This study demonstrates that Hi-Nicalon fiber/CVI-SiC composites perform well for a wide range of multilayer interface structures and that the interfaces present relatively high values of {tau} and {Gamma}{sub i}, both of which are beneficial to strength and toughness. The small carbon layer thicknesses in these multilayer
Magnetic studies of spin wave excitations in Fe/Mn multilayers

Energy Technology Data Exchange (ETDEWEB)

Salhi, H. [LPMMAT, Faculté des Sciences Ain Chock, Université Hassan II de Casablanca, B.P. 5366 Mâarif, Casablanca (Morocco); LMPG, Ecole supérieure de technologie, Université Hassan de Casablanca, Casablanca (Morocco); Moubah, R.; El Bahoui, A.; Lassri, H. [LPMMAT, Faculté des Sciences Ain Chock, Université Hassan II de Casablanca, B.P. 5366 Mâarif, Casablanca (Morocco)

2017-04-15

The structural and magnetic properties of Fe/Mn multilayers grown by thermal evaporation technique were investigated by transmission electron microscopy, vibrating sample magnetometer and spin wave theory. Transmission electron microscopy shows that the Fe and Mn layers are continuous with a significant interfacial roughness. The magnetic properties of Fe/Mn multilayers were studied for various Fe thicknesses (t{sub Fe}). The change of magnetization as a function of temperature is well depicted by a T{sup 3/2} law. The Fe spin-wave constant was extracted and found to be larger than that reported for bulk Fe, which we attribute to the fluctuation of magnetic moments at the interface, due to the interfacial roughness. The experimental M (T) data were satisfactory fitted for multilayers with different Fe thicknesses; and several exchange interactions were extracted. - Highlights: • The structural and magnetic properties of Fe/Mn multilayers were studied. • Fe and Mn layers are continuous with an important interfacial roughness. • The Fe spin-wave constant is larger than that reported for bulk Fe due to the fluctuation of the interfacial magnetic moments.
Magnetic studies of spin wave excitations in Fe/Mn multilayers

International Nuclear Information System (INIS)

Salhi, H.; Moubah, R.; El Bahoui, A.; Lassri, H.

2017-01-01

The structural and magnetic properties of Fe/Mn multilayers grown by thermal evaporation technique were investigated by transmission electron microscopy, vibrating sample magnetometer and spin wave theory. Transmission electron microscopy shows that the Fe and Mn layers are continuous with a significant interfacial roughness. The magnetic properties of Fe/Mn multilayers were studied for various Fe thicknesses (t Fe ). The change of magnetization as a function of temperature is well depicted by a T 3/2 law. The Fe spin-wave constant was extracted and found to be larger than that reported for bulk Fe, which we attribute to the fluctuation of magnetic moments at the interface, due to the interfacial roughness. The experimental M (T) data were satisfactory fitted for multilayers with different Fe thicknesses; and several exchange interactions were extracted. - Highlights: • The structural and magnetic properties of Fe/Mn multilayers were studied. • Fe and Mn layers are continuous with an important interfacial roughness. • The Fe spin-wave constant is larger than that reported for bulk Fe due to the fluctuation of the interfacial magnetic moments.
Construction of pegylated multilayer architectures via (strept)avidin/biotin interactions

International Nuclear Information System (INIS)

Dai Zhifei; Wilson, John T.; Chaikof, Elliot L.

2007-01-01

Pegylated multilayer architectures were fabricated as films on planar substrates, as shells on colloidal particles, or as free-standing hollow capsules using layer-by-layer (LbL) self-assembly of biotinylated poly-L-lysine (PLL) and (strept)avidin. Poly(ethylene glycol) (PEG) was incorporated into the multilayer architectures by assembly with biotin-derivatized poly(L-lysine)-g-poly(ethylene glycol)(PPB). Stepwise growth of multilayers was followed by UV-vis spectroscopy and the formation of core-shells and hollow capsules characterized by means of confocal laser scanning microscopy (CLSM) and transmission electron microscopy (TEM). Both absorbance and TEM data suggest that approximately two layers of FITC-avidin were adsorbed with each surface deposition. In contrast, use of unmodified PLL did not lead to formation of multilayer coatings, confirming that (strept)avidin-biotin interactions were responsible for film growth even in the presence of electrostatic repulsive forces between PLL and avidin and the steric hindrance of associated PEG chains. This technique provides new opportunities for the generation of robust films with tailored interfacial binding and transport properties
Performance of multilayer coated silicon pore optics

Science.gov (United States)

Ackermann, M. D.; Collon, M. J.; Jensen, C. P.; Christensen, F. E.; Krumrey, M.; Cibik, L.; Marggraf, S.; Bavdaz, M.; Lumb, D.; Shortt, B.

2010-07-01

The requirements for the IXO (International X-ray Observatory) telescope are very challenging in respect of angular resolution and effective area. Within a clear aperture with 1.7 m > R > 0.25 m that is dictated by the spacecraft envelope, the optics technology must be developed to satisfy simultaneously requirements for effective area of 2.5 m2 at 1.25 keV, 0.65 m2 at 6 keV and 150 cm2 at 30 keV. The reflectivity of the bare mirror substrate materials does not allow these requirements to be met. As such the IXO baseline design contains a coating layout that varies as a function of mirror radius and in accordance with the variation in grazing incidence angle. The higher energy photon response is enhanced through the use of depth-graded multilayer coatings on the inner radii mirror modules. In this paper we report on the first reflectivity measurements of wedged ribbed silicon pore optics mirror plates coated with a depth graded W/Si multilayer. The measurements demonstrate that the deposition and performance of the multilayer coatings is compatible with the SPO production process.
SnO2/PPy Screen-Printed Multilayer CO2 Gas Sensor

Directory of Open Access Journals (Sweden)

S.A. WAGHULEY

2007-05-01

Full Text Available Tin dioxide (SnO2 plays a dominant role in solid state gas sensors and exhibit sensitivity towards oxidizing and reducing gases by a variation of its electrical properties. The electrical conducting polymer-polypyrrole (PPy has high anisotropy of electrical conduction and used as a gas sensor. SnO2/PPy multilayer, pure SnO2, pure PPy sensors were prepared by screen-printing method on Al2O3 layer followed by glass substrate. The sensors were used for different concentration (ppm of CO2 gas investigation at room temperature (303 K. The sensitivity of SnO2/PPy multilayer sensor was found to be higher, compared with pure SnO2 and pure PPy sensors. The multilayer sensor exhibited improved stability. The response and recovery time of multilayer sensor were found to be ~2 min and ~10 min respectively.
Stronger multilayer acrylic dielectric elastomer actuators with silicone gel coatings

Science.gov (United States)

Lau, Gih-Keong; La, Thanh-Giang; Sheng-Wei Foong, Ervin; Shrestha, Milan

2016-12-01

Multilayer dielectric elastomer actuators (DEA) perform worst off than single-layer DEAs due to higher susceptibility to electro-thermal breakdown. This paper presents a hot-spot model to predict the electro-thermal breakdown field of DEAs and its dependence on thermal insulation. To inhibit the electrothermal breakdown, silicone gel coating was applied as barrier coating to multilayer acrylic DEA. The gel coating helps suppress the electro-thermally induced puncturing of DEA membrane at the hot spot. As a result, the gel-coated DEAs, in either a single layer or a multilayer stack, can produce 30% more isometric stress change as compared to those none-coated. These gel-coated acrylic DEAs show great potential to make stronger artificial muscles.

Enhancement of surface mechanical properties by using TiN[BCN/BN]{sub n}/c-BN multilayer system

Energy Technology Data Exchange (ETDEWEB)

Moreno, H. [Laboratorio de Recubrimientos Duros, CDT-ASTIN SENA, Cali (Colombia); Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Grupo de Peliculas Delgadas, Universidad del Valle, Cali (Colombia); Amaya, C. [Grupo de Peliculas Delgadas, Universidad del Valle, Cali (Colombia); Munoz-Saldana, J. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Mexico (Mexico); Yate, L.; Esteve, J. [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain); Prieto, P. [Grupo de Peliculas Delgadas, Universidad del Valle, Cali (Colombia); Centro de Excelencia en Nuevos Materiales, CENM, Cali (Colombia)

2010-11-15

The aim of this work is to improve the mechanical properties of AISI 4140 steel substrates by using a TiN[BCN/BN]{sub n}/c-BN multilayer system as a protective coating. TiN[BCN/BN]{sub n}/c-BN multilayered coatings via reactive r.f. magnetron sputtering technique were grown, systematically varying the length period ({Lambda}) and the number of bilayers (n) because one bilayer (n = 1) represents two different layers (t{sub BCN} + t{sub BN}), thus the total thickness of the coating and all other growth parameters were maintained constant. The coatings were characterized by Fourier transform infrared spectroscopy showing bands associated with h-BN bonds and c-BN stretching vibrations centered at 1400 cm{sup -1} and 1100 cm{sup -1}, respectively. Coating composition and multilayer modulation were studied via secondary ion mass spectroscopy. Atomic force microscopy analysis revealed a reduction in grain size and roughness when the bilayer number (n) increased and the bilayer period decreased. Finally, enhancement of mechanical properties was determined via nanoindentation measurements. The best behavior was obtained when the bilayer period ({Lambda}) was 80 nm (n = 25), yielding the relative highest hardness ({approx}30 GPa) and elastic modulus (230 GPa). The values for the hardness and elastic modulus are 1.5 and 1.7 times greater than the coating with n = 1, respectively. The enhancement effects in multilayered coatings could be attributed to different mechanisms for layer formation with nanometric thickness due to the Hall-Petch effect; because this effect, originally used to explain increased hardness with decreasing grain size in bulk polycrystalline metals, has also been used to explain hardness enhancements in multilayered coatings taking into account the thickness reduction at individual single layers that make up the multilayered system. The Hall-Petch model based on dislocation motion within layered and across layer interfaces has been successfully applied to
Substrate and coating defect planarization strategies for high-laser-fluence multilayer mirrors

International Nuclear Information System (INIS)

Stolz, Christopher J.; Wolfe, Justin E.; Mirkarimi, Paul B.; Folta, James A.; Adams, John J.; Menor, Marlon G.; Teslich, Nick E.; Soufli, Regina; Menoni, Carmen S.; Patel, Dinesh

2015-01-01

Planarizing or smoothing over nodular defects in multilayer mirrors can be accomplished by a discrete deposit-and-etch process that exploits the angle-dependent etching rate of optical materials. Typically, nodular defects limit the fluence on mirrors irradiated at 1064 nm with 10 ns pulse lengths due to geometrically- and interference-induced light intensification. Planarized hafina/silica multilayer mirrors have demonstrated > 125 J/cm 2 laser resistance for single-shot testing and 50 J/cm 2 for multi-shot testing for nodular defects originating on the substrate surface. Two planarization methods were explored: thick planarization layers on the substrate surface and planarized silica layers throughout the multilayer in which only the silica layers that are below one half of the incoming electric field value are etched. This paper also describes the impact of planarized defects that are buried within the multilayer structure compared to planarized substrate particulate defects. - Highlights: • Defect planarization significantly improves multilayer mirror laser resistance • Substrate and coating defects have both been effectively planarized • Single and multishot laser resistance improvement was demonstrated
A Magnetron Sputter Deposition System for the Development of X-Ray Multilayer Optics

Science.gov (United States)

Broadway, David

2015-01-01

The project objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and extreme ultraviolet (EUV) optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance NASA Marshall Space Flight Center's (MSFC's) position as a world leader in the design of innovative x-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures are absolutely necessary in order to advance the field of x-ray astronomy by pushing the limit for observing the universe to ever-increasing photon energies (i.e., up to 200 keV or higher), well beyond Chandra's (approx.10 keV) and NuStar's (approx.75 keV) capability. The addition of multilayer technology would significantly enhance the x-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication, and design of innovative x-ray instrumentation, which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments. To this aim, a magnetron vacuum sputter deposition system for the deposition of novel multilayer thin film x-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and x-ray optics for a broad range of applications including medical imaging.
A Magnetron Sputter Deposition System for the Development of Multilayer X-Ray Optics

Science.gov (United States)

Broadway, David; Ramsey, Brian; Gubarev, Mikhail

2014-01-01

The proposal objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and EUV optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance the MSFC's position as a world leader in the design of innovative X-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures is absolutely necessary in order to advance the field of X-ray astronomy by pushing the limit for observing the universe to ever increasing photon energies (i. e. up to 200 keV or higher); well beyond Chandra (approx. 10 keV) and NuStar's (approx. 75 keV) capability. The addition of multilayer technology would significantly enhance the X-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication and design of innovative X-ray instrumentation which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments.To this aim, a magnetron vacum sputter deposition system for the deposition of novel multilayer thin film X-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and X-ray optics for a broad range of applications including medical imaging.
A chemically stable PVD multilayer encapsulation for lithium microbatteries

International Nuclear Information System (INIS)

Ribeiro, J F; Sousa, R; Cunha, D J; Vieira, E M F; Goncalves, L M; Silva, M M; Dupont, L

2015-01-01

A multilayer physical vapour deposition (PVD) thin-film encapsulation method for lithium microbatteries is presented. Lithium microbatteries with a lithium cobalt oxide (LiCoO 2 ) cathode, a lithium phosphorous oxynitride (LiPON) electrolyte and a metallic lithium anode are under development, using PVD deposition techniques. Metallic lithium film is still the most common anode on this battery technology; however, it presents a huge challenge in terms of material encapsulation (lithium reacts with almost any materials deposited on top and almost instantly begins oxidizing in contact with atmosphere). To prove the encapsulation concept and perform all the experiments, lithium films were deposited by thermal evaporation technique on top of a glass substrate, with previously patterned Al/Ti contacts. Three distinct materials, in a multilayer combination, were tested to prevent lithium from reacting with protection materials and atmosphere. These multilayer films were deposited by RF sputtering and were composed of lithium phosphorous oxide (LiPO), LiPON and silicon nitride (Si 3 N 4 ). To complete the long-term encapsulation after breaking the vacuum, an epoxy was applied on top of the PVD multilayer. In order to evaluate oxidation state of lithium films, the lithium resistance was measured in a four probe setup (cancelling wires/contact resistances) and resistivity calculated, considering physical dimensions. A lithium resistivity of 0.16 Ω μm was maintained for more than a week. This PVD multilayer exonerates the use of chemical vapour deposition (CVD), glove-box chambers and sample manipulation between them, significantly reducing the fabrication cost, since battery and its encapsulation are fabricated in the same PVD chamber. (paper)
A chemically stable PVD multilayer encapsulation for lithium microbatteries

Science.gov (United States)

Ribeiro, J. F.; Sousa, R.; Cunha, D. J.; Vieira, E. M. F.; Silva, M. M.; Dupont, L.; Goncalves, L. M.

2015-10-01

A multilayer physical vapour deposition (PVD) thin-film encapsulation method for lithium microbatteries is presented. Lithium microbatteries with a lithium cobalt oxide (LiCoO2) cathode, a lithium phosphorous oxynitride (LiPON) electrolyte and a metallic lithium anode are under development, using PVD deposition techniques. Metallic lithium film is still the most common anode on this battery technology; however, it presents a huge challenge in terms of material encapsulation (lithium reacts with almost any materials deposited on top and almost instantly begins oxidizing in contact with atmosphere). To prove the encapsulation concept and perform all the experiments, lithium films were deposited by thermal evaporation technique on top of a glass substrate, with previously patterned Al/Ti contacts. Three distinct materials, in a multilayer combination, were tested to prevent lithium from reacting with protection materials and atmosphere. These multilayer films were deposited by RF sputtering and were composed of lithium phosphorous oxide (LiPO), LiPON and silicon nitride (Si3N4). To complete the long-term encapsulation after breaking the vacuum, an epoxy was applied on top of the PVD multilayer. In order to evaluate oxidation state of lithium films, the lithium resistance was measured in a four probe setup (cancelling wires/contact resistances) and resistivity calculated, considering physical dimensions. A lithium resistivity of 0.16 Ω μm was maintained for more than a week. This PVD multilayer exonerates the use of chemical vapour deposition (CVD), glove-box chambers and sample manipulation between them, significantly reducing the fabrication cost, since battery and its encapsulation are fabricated in the same PVD chamber.
Design and application of multilayer monolithic microwave integrated circuit transformers

Energy Technology Data Exchange (ETDEWEB)

Economides, S.B

1999-07-01

The design and performance of planar spiral transformers, using multilayer GaAs and silicon MMIC technology, are presented. This multilayer technology gives new opportunities for improving the performance of planar transformers, couplers and baluns. Planar transformers have high parasitic resistance and capacitance and low levels of coupling. Using multilayer technology these problems are overcome by applying a multilayer structure of three metal layers separated by two polyimide dielectric layers. The improvements gained by placing the conductors on different metal layers, and using conductors raised on polyimide layers for low capacitance, have been investigated. The circuits were fabricated using a novel experimental fabrication process, which uses entirely standard materials and techniques and is compatible with BJT's and silicon-germanium HBT's. The transformers were all characterised up to 20 GHz using RF-on-wafer measurements. They demonstrated good performance, considering the experimental nature of in-house multilayer technology and the difficulties in simulating these three-dimensional new geometries. With high resistivity substrates, the silicon components achieved virtually the same performance as their gallium arsenide counterparts. The transformers were then used in simulations of transformer-coupled HBT amplifier circuits, to demonstrate their capabilities. It was shown that these circuits present good performance compared to standard off-the shelf component circuits and are very promising for use in most multilayer MMIC applications. The structures were further used in coupling configurations, and applied in balun circuits and pushpull amplifiers. The spiral transformer coupler can operate at low frequencies without using up much chip area. In a balun configuration, the balun can compensate for coupling and phase imbalance and operates over 5 to 15 GHz. The spiral coupler does not always need multilayer processing, so the balun may be
Origin of perpendicular magnetic anisotropy in Co/Ni multilayers

Science.gov (United States)

Arora, M.; Hübner, R.; Suess, D.; Heinrich, B.; Girt, E.

2017-07-01

We studied the variation in perpendicular magnetic anisotropy of (111) textured Au /N ×[Co /Ni ]/Au films as a function of the number of bilayer repeats N . The ferromagnetic resonance and superconducting quantum interference device magnetometer measurements show that the perpendicular magnetic anisotropy of Co/Ni multilayers first increases with N for N ≤10 and then moderately decreases for N >10 . The model we propose reveals that the decrease of the anisotropy for N reduction in the magnetoelastic and magnetocrystalline anisotropies. A moderate decrease in the perpendicular magnetic anisotropy for N >10 is due to the reduction in the magnetocrystalline and the surface anisotropies. To calculate the contribution of magnetoelastic anisotropy in the Co/Ni multilayers, in-plane and out-of-plane x-ray diffraction measurements are performed to determine the spacing between Co/Ni (111) and (220) planes. The magnetocrystalline bulk anisotropy is estimated from the difference in the perpendicular and parallel g factors of Co/Ni multilayers that are measured using the in-plane and out-of-plane ferromagnetic resonance measurements. Transmission electron microscopy has been used to estimate the multilayer film roughness. These values are used to calculate the roughness-induced surface and magnetocrystalline anisotropy coefficients as a function of N .
Multilayer Controller for Outdoor Vehicle

DEFF Research Database (Denmark)

Reske-Nielsen, Anders; Mejnertsen, Asbjørn; Andersen, Nils Axel

2006-01-01

A full software and hardware solution has been designed, implemented and tested for control of a small agricultural automatic tractor. The objective was to realise a user-friendly, multi-layer controller architecture for an outdoor platform. The collaborative research work was done as a part of a...
Modeling Macroscopic Shape Distortions during Sintering of Multi-layers

DEFF Research Database (Denmark)

Tadesse Molla, Tesfaye

as to help achieve defect free multi-layer components. The initial thickness ratio between the layers making the multi-layer has also significant effect on the extent of camber evolution depending on the material systems. During sintering of tubular bi-layer structures, tangential (hoop) stresses are very...... large compared to radial stresses. The maximum value of hoop stress, which can generate processing defects such as cracks and coating peel-offs, occurs at the beginning of the sintering cycle. Unlike most of the models defining material properties based on porosity and grain size only, the multi...... (firing). However, unintended features like shape instabilities of samples, cracks or delamination of layers may arise during sintering of multi-layer composites. Among these defects, macroscopic shape distortions in the samples can cause problems in the assembly or performance of the final component...
Influence of modulation periods on the tribological behavior of Si/a-C: H multilayer film

Science.gov (United States)

Zhu, Linan; Wu, Yanxia; Zhang, Shujiao; Yu, Shengwang; Tang, Bin; Liu, Ying; Zhou, Bing; Shen, Yanyan

2018-01-01

A series of Si/a-C: H multilayer films with different modulation periods were fabricated on stainless steel and silicon substrates by radio-frequency magnetron sputtering. The influence of the modulation period on the structure, morphology, mechanical properties and tribological behaviors in different environments (air, simulated acid rain, and NaCl solution) was investigated. The results show that the content of the sp2 hybrid carbon, surface roughness and hardness of the multilayer film increased firstly and then decreased with the decreased modulation period. Furthermore, the combination of the sublayer agrees well with the formation of the SiC crystal at the interface. Interestingly, the films show quite substantially different tribological properties in various test environments. The lowest friction coefficient is 0.2 for the S1 film in air. However, the lowest friction coefficient can reach 0.13 in solution. Importantly, the tribological behavior of the multilayer film is mainly determined by its hardness, as well as surface roughness in air while it is closely related with modulation period and interface structure in solution.
Wrapped Multilayer Insulation

Science.gov (United States)

Dye, Scott A.

2015-01-01

New NASA vehicles, such as Earth Departure Stage (EDS), Orion, landers, and orbiting fuel depots, need improved cryogenic propellant transfer and storage for long-duration missions. Current cryogen feed line multilayer insulation (MLI) performance is 10 times worse per area than tank MLI insulation. During each launch, cryogenic piping loses approximately 150,000 gallons (equivalent to $300,000) in boil-off during transfer, chill down, and ground hold. Quest Product Development Corp., teaming with Ball Aerospace, developed an innovative advanced insulation system, Wrapped MLI (wMLI), to provide improved thermal insulation for cryogenic feed lines. wMLI is high-performance multilayer insulation designed for cryogenic piping. It uses Quest's innovative discrete-spacer technology to control layer spacing/ density and reduce heat leak. The Phase I project successfully designed, built, and tested a wMLI prototype with a measured heat leak 3.6X lower than spiral-wrapped conventional MLI widely used for piping insulation. A wMLI prototype had a heat leak of 7.3 W/m2, or 27 percent of the heat leak of conventional MLI (26.7 W/m2). The Phase II project is further developing wMLI technology with custom, molded polymer spacers and advancing the product toward commercialization via a rigorous testing program, including developing advanced vacuuminsulated pipe for ground support equipment.
An ultra-broadband multilayered graphene absorber

KAUST Repository

Amin, Muhammad; Farhat, Mohamed; Bagci, Hakan

2013-01-01

An ultra-broadband multilayered graphene absorber operating at terahertz (THz) frequencies is proposed. The absorber design makes use of three mechanisms: (i) The graphene layers are asymmetrically patterned to support higher order surface plasmon
The stress-strain relationship for multilayers of the high Tc superconducting oxides

International Nuclear Information System (INIS)

Hidaka, H.; Yamamura, H.

1988-01-01

This paper reports the calculation of the stress-strain relationship for multilayers of the high Tc superconducting oxides. The elucidation of this relationship is expected quite helpful for the preparation of high-quality multilayers of these materials. This calculation is possible to do in the same way of Timoshenko's bi-metal treatment. The authors did computation of the residual stress and strain, and the state of stress and strain for these multilayers has been acquired in detail by this calculation
Thermal performance measurement and application of a multilayer insulator for emergency architecture

International Nuclear Information System (INIS)

Salvalai, Graziano; Imperadori, Marco; Scaccabarozzi, Diego; Pusceddu, Cristina

2015-01-01

Lightness coupled with a quick assembly method is crucial for emergency architecture in post-disaster area where accessibility and action time play a huge barer to rescue people. In this prospective, the following work analyses the potentiality (technological and thermal performances) of multilayer insulator for a new shelter envelope able to provide superior thermal comfort for the users. The thermal characteristics are derived experimentally by means of a guard ring apparatus under different working temperatures. Tests are performed on the multilayer insulator itself and on a composite structure, made of the multilayer insulator and two air gaps wrapped by a polyester cover, which is the core of a new lightweight emergency architecture. Experimental results show good agreement with literature data, providing a thermal conductivity and transmittance of about 0.04 W/(m °C) and 1.6 W/(m 2 °C) for the tested multilayer. The composite structure called Thermo Reflective Multilayer System (TRMS) shows better insulation performances, providing a thermal transmittance set to 0.85 W/(m 2 °C). A thermal model of an emergency tent based on the new insulating structure (TRMS) has been developed and its thermal performances have been compared with those of a UNHCR traditional emergency shelter. The shelter model was simulated (Trnsys v.17 environment) in the winter season considering the climate of Belgrade and using only the casual gains from occupant and solar radiation through opaque wall. Numerical simulations evidenced that the new insulating composite envelope reduces required heating load of about two and four times with respect to the traditional insulation. The study sets a starting point to develop a lightweight emergency architecture made with a combination between multilayer, air, polyester and vulcanized rubber. - Highlights: • Multilayer insulator tested by means of a guard ring apparatus. • Thermo reflective multilayer system (TRMS) development
Self organized formation of Ge nanocrystals in multilayers

OpenAIRE

Zschintzsch-Dias, Manuel

2012-01-01

The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated...
Soft Magnetic Multilayered Thin Films for HF Applications

Science.gov (United States)

Loizos, George; Giannopoulos, George; Serletis, Christos; Maity, Tuhin; Roy, Saibal; Lupu, Nicoleta; Kijima, Hanae; Yamaguchi, Masahiro; Niarchos, Dimitris

Multilayered thin films from various soft magnetic materials were successfully prepared by magnetron sputtering in Ar atmosphere. The magnetic properties and microstructure were investigated. It is found that the films show good soft magnetic properties: magnetic coercivity of 1-10 Oe and saturation magnetization higher than 1T. The initial permeability of the films is greater than 300 and flattens up to 600 MHz. The multilayer thin film properties in combination with their easy, fast and reproducible fabrication indicate that they are potential candidates for high frequency applications.
Negative Refraction Using Frequency-Tuned Oxide Multilayer Structure

Directory of Open Access Journals (Sweden)

Yalin Lu

2008-01-01

Full Text Available An oxide-based multilayer structure was proposed to realize negative refraction. The multilayer composes of alternative layers having negative permittivity and negative permeability, respectively. In order to realize negative refraction, their dielectric and magnetic resonances of layers will be tuned to the frequency as close as possibly via changing their temperature, composition, structure, and so forth. Such oxide-based NIMs are attractive for their potential applications as optical super lenses, imagers, optical cloaking, sensors, and so forth, those are required with low-loss, low-cost, and good fabrication flexibility.
Obtention of high hardness multilayer systems by laser ablation

International Nuclear Information System (INIS)

Mejia T, I.S.

2007-01-01

In this thesis work the synthesis of thin films of titanium nitride (TiN), amorphous carbon nitride (CN x ) amorphous carbon (a-C) and Ti/TiN/CNx multilayers and Ti/TiN/a-C by means of the laser ablation technique, with the objective of obtaining films of high hardness is studied, as well as to produce multilayer coatings with superior properties to the individual layers. The effect that has the laser fluence used for ablationing the targets in the structure and mechanical properties of the films deposited of TiN was investigated. It was found that the hardness is increased in lineal way approximately with the fluence increment up to 19 J/cm 2 . Thin films of a-C with hardness of the order of 12 GPa. likewise CN x films with high hardness (18.4 GPa) were obtained. The hardness of the deposited films was analyzed and it was related with its microstructure and deposit conditions. It was concluded that the Ti/TiN/CNx and Ti/TiN/a-C systems presented bigger hardness that of its individual components. (Author)
Water adsorption on goethite: Application of multilayer adsorption models

Science.gov (United States)

Hatch, C. D.; Tumminello, R.; Meredith, R.

2016-12-01

Adsorbed water on the surface of atmospheric mineral dust has recently been shown to significantly affect the ability of mineral dust aerosol to act as cloud condensation nuclei. We have studied water adsorption as a function of relative humidity (RH) on goethite (α-FeO(OH)), a common component of atmospheric mineral dust. The goethite surface area and particle size was determined using BET analysis and with N2 as an adsorbate and scanning electron microscopy, respectively. Water adsorption on the sample was monitored using horizontal attenuated total reflectance Fourier transform infrared (HATR-FTIR) spectroscopy equipped with a flow cell. Water content was determined using Beer's law and the optical constants for bulk water. The results were analyzed using Type II adsorption isotherms to model multilayer adsorption, including BET (Brunauer, Emmet and Teller), FHH (Frenkel, Halsey and Hill) and Freundlich. BET fits to experimental data provide parameters of monolayer coverage, while the FHH and Freundlich isotherms provide insights into multilayer adsorption mechanisms. Results indicate that goethite contains 5% H2O by mass at 50% RH, which increases to 12% by mass at 90% RH. Adsorption parameters and experimental results will be presented.

Multilayer DNA Origami Packed on Hexagonal and Hybrid Lattices

OpenAIRE

Ke, Yonggang; Voigt, Niels V.; Gothelf, Kurt V.; Shih, William M.

2012-01-01

“Scaffolded DNA origami” has been proven to be a powerful and efficient approach to construct two-dimensional or three-dimensional objects with great complexity. Multilayer DNA origami has been demonstrated with helices packing along either honeycomb-lattice geometry or square-lattice geometry. Here we report successful folding of multilayer DNA origami with helices arranged on a close-packed hexagonal lattice. This arrangement yields a higher density of helical packing and therefore higher r...
Patterns of suspected wheat-related allergy

DEFF Research Database (Denmark)

Junker Christensen, Morten; Eller, Esben; Mortz, Charlotte G

2014-01-01

BACKGROUND: Allergy to wheat can present clinically in different forms: Sensitization to ingested wheat via the gastrointestinal tract can cause traditional food allergy or in combination with exercise, Wheat-Dependent Exercise-Induced Anaphylaxis (WDEIA). Sensitization to inhaled wheat flour may......). All children had atopic dermatitis, and most (13/15) outgrew their wheat allergy. Most children (13/15) had other food allergies. Challenge positive patients showed significantly higher levels of sIgE to wheat and significantly more were SPT positive than challenge negative. Group 2: Eleven out of 13...... of sIgE to ω-5-gliadin. The natural course is presently unknown. CONCLUSION: Wheat allergy can manifest in different disease entities, rendering a detailed case history and challenge mandatory. Patient age, occupation, concomitant allergies (food or inhalant) and atopic dermatitis are important factors...
76 FR 92 - Multilayered Wood Flooring From the People's Republic of China: Postponement of Preliminary...

Science.gov (United States)

2011-01-03

... DEPARTMENT OF COMMERCE International Trade Administration [C-570-971] Multilayered Wood Flooring... Department'') initiated an investigation of multilayered wood flooring from the People's Republic of China (``PRC''). See Multilayered Wood Flooring From the People's Republic of China: Initiation of...
Amorphous-crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

International Nuclear Information System (INIS)

D'Angelo, D.; Piro, A.M.; Mirabella, S.; Bongiorno, C.; Romano, L.; Terrasi, A.; Grimaldi, M.G.

2007-01-01

Transmission Electron Microscopy was combined with Time Resolved Reflectivity to study the amorphous-crystalline (a-c) interface evolution during Solid Phase Epitaxy Regrowth (SPER) of Si 0.83 Ge 0.17 films deposited on Si by Molecular Beam Epitaxy and amorphized with Ge + ion implantation. Starting from the Si/SiGe interface, a 20 nm thick layer regrows free of defects with the same SPER rate of pure Si. The remaining SiGe regrows with planar defects and dislocations, accompanied by a decrease of the SPER velocity. The sample was also studied after implantation with B or P. In these cases, the SPER rate raises following the doping concentration profile, but no difference in the defect-free layer thickness was observed compared to the un-implanted sample. On the other hand, B or P introduction reduces the a-c interface roughness, while B-P co-implantation produces roughness comparable to the un-implanted sample
Thermal, mechanical and permeation properties of gamma-irradiated multilayer food packaging films containing a buried layer of recycled low-density polyethylene

International Nuclear Information System (INIS)

Chytiri, Stavroula; Goulas, Antonios E.; Riganakos, Kyriakos A.; Kontominas, Michael G.

2006-01-01

The effect of gamma radiation (doses 5-60kGy) on the thermal, mechanical and permeation properties, as well as on IR-spectra of experimental five-layer food packaging films were studied. Films contained a middle buried layer of recycled low-density polyethylene (LDPE) comprising 25-50% by weight of the multilayer structure. Representative films containing 100% virgin LDPE as the buried layer were taken as controls. Results showed that the percentage of recycled LDPE in the multilayer structure did not significantly (p<0.05) affect the melting temperature, tensile strength, percent elongation at break, Young's modulus, oxygen, carbon dioxide and water vapour transmission rate values and the IR-spectra of the non-irradiated and irradiated multilayer films. Irradiation (mainly the higher dose of 60kGy) induced certain small, but statistically significant (p<0.05) differences in the mechanical properties of multilayer films (with or without recycled LDPE layer) while no significant differences were observed in the thermal properties and in the gas and water vapour permeability of multilayer films. The above findings are discussed in relation to the good quality of the pre-consumer scrap used in the present study
Thermoelasticity and interdiffusion in CuNi multilayers

International Nuclear Information System (INIS)

Benoudia, M.C.; Gao, F.; Roussel, J.M.; Labat, S.; Gailhanou, M.; Thomas, O.; Beke, D.L.; Erdelyi, Z.; Langer, G.A.; Csik, A.; Kis-Varga, M.

2012-01-01

Complete text of publication follows. The idea of observing artificial metallic multilayers with x-ray diffraction techniques to study interdiffusion phenomena dates back to the work of DuMond and Youtz. Interestingly, these pioneering contributions even suggested that the approach could be used to measure the concentration dependence of the diffusion coefficient. This remark is precisely the subject of the present work: we aim to revisit this issue in light of recent atomistic simulation results obtained for coherent CuNi multilayers. More generally, CuNi multilayers have been extensively studied for their magnetic, mechanical, and optical properties. These physical properties depend critically on interfaces and require a good control on the evolution of composition and strain fields under heat treatment. Understanding of how interdiffusion proceeds in these nanosystems should therefore improve these practical aspects. From a theoretical viewpoint these synthetic modulated structures have been also used as valuable model systems to test the various diffusion theories accounting in particular for the influence of the alloying energy, the coherency strain, and the local concentration. Nowadays, this field remains active and has been extended with the development of atomic simulations and many microscopy techniques like atom probe tomography which give details on the intermixing mechanisms. We have performed x-ray diffraction experiments on coherent CuNi multilayers to probe thermoelasticity and interdiffusion in these samples. Kinetic mean-field simulations combined with the modeling of the x-ray spectra were also achieved to rationalize the experimental results. We have shown that classical thermoelastic arguments combined with bulk data can be used to model the x-ray scattered intensity of annealed coherent CuNi multilayers. This result provides a valuable framework to analyze the evolution of the concentration profiles at higher temperature. The typical coherent
Thickness measurement of multilayered samples by Kα/Kβ or Lα/Lβ X-ray ratios

Energy Technology Data Exchange (ETDEWEB)

Cesareo, Roberto; Brunetti, Antonio, E-mail: roberto.cesareo@gmail.com, E-mail: brunetti@uniss.it [Universita di Sassari (UNISS), Sassari, (Italy); Assis, Joaquim T. de, E-mail: rcbarros@pq.cnpq.br [Universidade do Estado do Rio de Janeiro (UERJ), Rio de Janeiro, RJ (Brazil)

2013-07-01

Objects composed of two or more layers are relatively common among industrial and electronic materials, works of art and common tools. For example plated objects (with zinc, nickel, silver, gold) are composed of two or three layers, a painting is generally composed of several layers, a decorated vase is composed of two or three layers, just as a stone, marble or bronze covered with a protective layer. In this paper a general method and some results are described to reconstruct structure and to determine thicknesses of multilayered material, when energy dispersive X-ray fluorescence is employed to analyze the material: the X-ray ratios of Kα/Kβ and Lα/Lβ for elements present in the multilayered samples are employed. (author)
Thickness measurement of multilayered samples by Kα/Kβ or Lα/Lβ X-ray ratios

International Nuclear Information System (INIS)

Cesareo, Roberto; Brunetti, Antonio; Assis, Joaquim T. de

2013-01-01

Objects composed of two or more layers are relatively common among industrial and electronic materials, works of art and common tools. For example plated objects (with zinc, nickel, silver, gold) are composed of two or three layers, a painting is generally composed of several layers, a decorated vase is composed of two or three layers, just as a stone, marble or bronze covered with a protective layer. In this paper a general method and some results are described to reconstruct structure and to determine thicknesses of multilayered material, when energy dispersive X-ray fluorescence is employed to analyze the material: the X-ray ratios of Kα/Kβ and Lα/Lβ for elements present in the multilayered samples are employed. (author)
Design guidelines for advanced LSI microcircuit packaging using thick film multilayer technology

Science.gov (United States)

Peckinpaugh, C. J.

1974-01-01

Ceramic multilayer circuitry results from the sequential build-up of two or more layers of pre-determined conductive interconnections separated by dielectric layers and fired at an elevated temperature to form a solidly fused structure. The resultant ceramic interconnect matrix is used as a base to mount active and passive devices and provide the necessary electrical interconnection to accomplish the desired electrical circuit. Many methods are known for developing multilevel conductor mechanisms such as multilayer printed circuits, welded wire matrices, flexible copper tape conductors, and thin and thick-film ceramic multilayers. Each method can be considered as a specialized field with each possessing its own particular set of benefits and problems. This design guide restricts itself to the art of design, fabrication and assembly of ceramic multilayer circuitry and the reliability of the end product.
Kossel interferences of proton-induced X-ray emission lines in periodic multilayers

Energy Technology Data Exchange (ETDEWEB)

Wu, Meiyi; Le Guen, Karine; André, Jean-Michel [Sorbonne Universités, UPMC Univ Paris 06, Laboratoire de Chimie Physique-Matière et Rayonnement, 11 rue Pierre et Marie Curie, F-75231 Paris cedex 05 (France); CNRS UMR 7614, Laboratoire de Chimie Physique-Matière et Rayonnement, 11 rue Pierre et Marie Curie, F-75231 Paris cedex 05 (France); Ilakovac, Vita [Sorbonne Universités, UPMC Univ Paris 06, Laboratoire de Chimie Physique-Matière et Rayonnement, 11 rue Pierre et Marie Curie, F-75231 Paris cedex 05 (France); CNRS UMR 7614, Laboratoire de Chimie Physique-Matière et Rayonnement, 11 rue Pierre et Marie Curie, F-75231 Paris cedex 05 (France); Université de Cergy-Pontoise, F-95031 Cergy-Pontoise (France); Vickridge, Ian [Sorbonne Universités, UPMC Univ Paris 06, Institut des NanoSciences de Paris, 4 place Jussieu, boîte courrier 840, F-75252 Paris cedex 05 (France); CNRS UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, boîte courrier 840, F-75252 Paris cedex 05 (France); Schmaus, Didier [Sorbonne Universités, UPMC Univ Paris 06, Institut des NanoSciences de Paris, 4 place Jussieu, boîte courrier 840, F-75252 Paris cedex 05 (France); CNRS UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, boîte courrier 840, F-75252 Paris cedex 05 (France); Université Paris Diderot-P7, F-75205 Paris cedex 13 (France); and others

2016-11-01

The Kossel interferences generated by characteristic X-ray lines produced inside a periodic multilayer have been observed upon proton irradiation, by submitting a Cr/B{sub 4}C/Sc multilayer stack to 2 MeV protons and observing the intensity of the Sc and Cr Kα characteristic emissions as a function of the detection angle. When this angle is close to the Bragg angle corresponding to the emission wavelength and period of the multilayer, an oscillation of the measured intensity is detected. The results are in good agreement with a model based on the reciprocity theorem. The combination of the Kossel measurements and their simulation, will be a useful tool to obtain a good description of the multilayer stack and thus to study nanometer-thick layers and their interfaces.
Electrical resistivity of thin metal films and multilayers

International Nuclear Information System (INIS)

Fenn, M.

1999-01-01

The electrical resistivity and temperature coefficient of resistivity (TCR) of thin films and multilayers of Cu, Nb and Zr have been measured over a wide range of layer thicknesses. The structure of the films has been characterised using transmission electron microscopy (TEM) and x-ray reflectivity. The experimental results have been compared with the semiclassical theory due to Dimmich. The values of the grain boundary reflectivity, R, in the single films has been found to be approximately 0.35 for Cu in agreement with the literature. The value of R for Nb and Zr has been found to vary with grain size, although it is approximately 0.55 for Nb and 0.925 for Zr over a wide range of grain sizes, and this is believed to be presented for the first time. The value of the interfacial specularity parameter, p, is not found to have a significant effect compared to R in the single films. Dimmich's theoretical expression for the TCR does not match experiment, but by adapting the resistivity expression of the theory to different temperatures a satisfactory fit has been obtained. It has been concluded that the assumption of the free electron model in the presence of grain boundary scattering is in error. The adapted theory predicts negative TCR in sufficiently thin films with experimentally plausible values of the input parameters, and this is believed to be demonstrated for the first time. The experimental resistivity of the multilayers was much lower than expected from the resistivity of the single films. A theoretical fit to the experimental resistivity and TCR of the multilayers was obtained by adjusting the parameter values obtained from single films, and the value of p was found to be significant. This procedure leads to a contradiction in the value of R for Nb. With a view to extending the above work to magnetic multilayers, an AC susceptometer has been designed, built and tested. The results indicate that this instrument would be suitable for work on magnetic
Interface characterization in B-based multilayer mirrors for next generation lithography

International Nuclear Information System (INIS)

Naujok, Philipp; Yulin, Sergiy; Müller, Robert; Kaiser, Norbert; Tünnermann, Andreas

2016-01-01

The interfaces in La/B_4C and LaN/B_4C multilayer mirrors designed for near normal incidence reflection of 6.x nm EUV light were investigated by grazing incidence X-ray reflectometry, high-resolution transmission electron microscopy and EUV reflectometry. The thickness and roughness asymmetries of the different interfaces in both studied systems have been identified. A development of interface roughness with an increasing number of bilayers was found by different investigation methods. For near normal incidence, R = 51.1% @ λ = 6.65 nm could be reached with our La/B_4C multilayer mirrors, whereas R = 58.1% was achieved with LaN/B_4C multilayers at the same wavelength. - Highlights: • Interface structure in B-based multilayer mirrors investigated. • Combining X-ray reflection, EUV reflection and transmission electron microscopy • Interface thickness and roughness asymmetry identified • Interface roughness increases with higher number of bilayers.
Electro-Caloric Properties of BT/PZT Multilayer Thin Films Prepared by Sol-Gel Method.

Science.gov (United States)

Kwon, Min-Su; Lee, Sung-Gap; Kim, Kyeong-Min

2018-09-01

In this study, Barium Titanate (BT)/Lead Zirconate Titanate (PZT) multilayer thin films were fabricated by the spin-coating method on Pt (200 nm)/Ti (10 nm) SiO2 (100 nm)/P-Si (100) substrates using BaTiO3 and Pb(Zr0.90Ti0.10)O3 metal alkoxide solutions. The coating and heating procedure was repeated several times to form the multilayer thin films. All of BT/PZT multilayer thin films show X-ray diffraction patterns typical to a polycrystalline perovskite structure and a uniform and void free grain microstructure. The thickness of the BT and PZT film by one-cycle of drying/sintering was approximately 50 nm and all of the films consisted of fine grains with a flat surface morphology. The electrocaloric properties of BT/PZT thin films were investigated by indirect estimation. The results showed that the temperature change ΔT can be calculated as a function of temperature using Maxwell's relation; the temperature change reaches a maximum value of ~1.85 °C at 135 °C under an applied electric field of 260 kV/cm.
Performance Test of the Microwave Ion Source with the Multi-layer DC Break

International Nuclear Information System (INIS)

Kim, Dae Il; Kwon, Hyeok Jung; Kim, Han Sung; Seol, Kyung Tae; Cho, Yong Sub

2012-01-01

A microwave proton source has been developed as a proton injector for the 100-MeV proton linac of the PEFP (Proton Engineering Frontier Project). On microwave ion source, the high voltage for the beam extraction is applied to the plasma chamber, also to the microwave components such as a 2.45GHz magnetron, a 3-stub tuner, waveguides. If microwave components can be installed on ground side, the microwave ion source can be operated and maintained easily. For the purpose, the multi-layer DC break has been developed. A multi-layer insulation has the arrangement of conductors and insulators as shown in the Fig. 1. For the purpose of stable operation as the multi-layer DC break, we checked the radiation of the insulator depending on materials and high voltage test of a fabricated multi-layer insulation. In this report, the details of performance test of the multi-layer DC break will be presented
The calculation of electron depth-dose distributions in multilayer medium

International Nuclear Information System (INIS)

Wang Chuanshan; Xu Mengjie; Li Zhiliang; Feng Yongxiang; Li Panlin

1989-01-01

Energy deposition in multilayer medium and the depth dose distribution in the layers are studied. Based on semi-empirical calculation of electron energy absorption in matter with EDMULT program of Tabata and Ito, further work has been carried out to extend the computation to multilayer composite material. New program developed in this paper makes IBM-PC compatible with complicated electron dose calculations
Multilayered Zn-Ni alloy coatings for better corrosion protection of mild steel

Directory of Open Access Journals (Sweden)

Sadananda Rashmi

2017-06-01

Full Text Available A simple aqueous electrolyte for the deposition of anti-corrosive Zn-Ni alloy coatings was optimized using conventional Hull cell method. The corrosion protection value of the electrodeposited coatings at a current density (c.d. range of 2.0–5.0 A dm−2 has been testified in 5 wt% NaCl solution, as representative corrosion medium. The electrochemical behavior of the coatings towards corrosion was related to its surface topography, elemental composition and phase structure using scanning electron microscopy (SEM, energy dispersive spectroscopy (EDS and X-ray diffraction (XRD analyses, respectively. Among the monolithic coatings developed at different c.d.’s, the coating obtained at 3.0 A dm−2 was found to be the best with least corrosion current (icorr value. Further, the corrosion protection efficacy of the monolayer coatings were improved to many folds through multilayer coating approach, by modulating the cyclic cathode current densities (CCCD’s. The composition modulated multilayer (CMM Zn-Ni alloy coating with 60 layers, developed from the combination of CCCD’s 3.0 and 5.0 A dm−2 was found to be the best with 3 fold enhancement in corrosion protection efficiency. The formation of multilayer coatings was confirmed using cross-sectional SEM, and the experimental results are discussed with tables and figures.
Processing and characterization of multilayers for energy device fabrication (invited)

DEFF Research Database (Denmark)

Kaiser, Andreas; Kiebach, Wolff-Ragnar; Gurauskis, Jonas

SOFC and tubular OTM, we present selected challenges in ceramic processing such asymmetric multilayer structures. By optimizing different steps in the ceramic processing, we improved the mechanical properties and gas permeability of porous supports and the (electrochemical) performance of electrodes......The performance of asymmetric multilayer structures in solid oxide fuel cells (SOFC)/solid oxide electrolysis cells (SOEC), tubular oxygen transport membranes (OTM) and similar high temperature energy devices is often determined by the ceramic fabrication (for given materials and design). A good...... understanding and control of different processing steps (from powder/materials selection, through shaping and sintering) is of crucial importance to achieve a defect-free multilayer microstructure with the desired properties and performance. Based on the experiences at DTU Energy with the fabrication of planar...
Interface alloying in multilayer thin films using polarized neutron reflectometry

International Nuclear Information System (INIS)

Basu, Saibal

2013-01-01

Polarized Neutron Reflectometry (PNR) is an excellent tool to probe magnetic depth profile in multilayer thin film samples. In case of multilayer films with alternating magnetic and non-magnetic layers, PNR can provide magnetic depth profile at the interfaces with better than nanometer resolution. Using PNR and Xray Reflectometry (XRR) together one can obtain chemical composition and magnetic structure, viz. magnetic moment density at interfaces in multilayer films. We have used these two techniques to obtain kinetics of alloy formation at the interfaces and the magnetic nature of the alloy at the interfaces in several important thin films with magnetic/non-magnetic bilayers. These include Ni/Ti, Ni/Al and Si/Ni pairs. Results obtained from these studies will be presented in this talk. (author)
Lamellar multilayer hexadecylaniline-modified gold nanoparticle ...

Indian Academy of Sciences (India)

standard Wilhelmy plate was used for surface pressure sensing. Multilayer ... carried out on a JEOL model 1200EX instrument operated at an accelerating voltage of ... the gold nanoparticles within domains (and reorganization of the domains ...
Tuning the electronic properties of gated multilayer phosphorene: A self-consistent tight-binding study

Science.gov (United States)

Li, L. L.; Partoens, B.; Peeters, F. M.

2018-04-01

By taking account of the electric-field-induced charge screening, a self-consistent calculation within the framework of the tight-binding approach is employed to obtain the electronic band structure of gated multilayer phosphorene and the charge densities on the different phosphorene layers. We find charge density and screening anomalies in single-gated multilayer phosphorene and electron-hole bilayers in dual-gated multilayer phosphorene. Due to the unique puckered lattice structure, both intralayer and interlayer charge screenings are important in gated multilayer phosphorene. We find that the electric-field tuning of the band structure of multilayer phosphorene is distinctively different in the presence and absence of charge screening. For instance, it is shown that the unscreened band gap of multilayer phosphorene decreases dramatically with increasing electric-field strength. However, in the presence of charge screening, the magnitude of this band-gap decrease is significantly reduced and the reduction depends strongly on the number of phosphorene layers. Our theoretical results of the band-gap tuning are compared with recent experiments and good agreement is found.

Classification of non-performing loans portfolio using Multilayer Perceptron artificial neural networks

Directory of Open Access Journals (Sweden)

Flávio Clésio Silva de Souza

2014-06-01

Full Text Available The purpose of the present research is to apply a Multilayer Perceptron (MLP neural network technique to create classification models from a portfolio of Non-Performing Loans (NPLs to classify this type of credit derivative. These credit derivatives are characterized as the amount of loans that were not paid and are already overdue more than 90 days. Since these titles are, because of legislative motives, moved by losses, Credit Rights Investment Funds (FDIC performs the purchase of these debts and the recovery of the credits. Using the Multilayer Perceptron (MLP architecture of Artificial Neural Network (ANN, classification models regarding the posterior recovery of these debts were created. To evaluate the performance of the models, evaluation metrics of classification relating to the neural networks with different architectures were presented. The results of the classifications were satisfactory, given the classification models were successful in the presented economics costs structure.
76 FR 76693 - Multilayered Wood Flooring From the People's Republic of China: Countervailing Duty Order

Science.gov (United States)

2011-12-08

..., tongue-and-groove construction or locking joints). All multilayered wood flooring is included within the... DEPARTMENT OF COMMERCE International Trade Administration [C-570-971] Multilayered Wood Flooring...''), the Department is issuing a countervailing duty (``CVD'') order on multilayered wood flooring from the...
Grazing incidence Fe-line telescopes using W/B4C multilayers

DEFF Research Database (Denmark)

Joensen, K. D.; Gorenstein, P.; Christensen, Finn Erland

1995-01-01

The loss of throughput observed at higher energies for traditional grazing-incidence X-ray telescopes coated with high-Z elements can be partly countered by employing multilayers on the outermost reflectors. Using 8-keV reflectivity data from a periodic W/B4C multilayer, the expected performance...
Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

International Nuclear Information System (INIS)

Hartmann, J.M.; Andrieu, F.; Lafond, D.; Ernst, T.; Bogumilowicz, Y.; Delaye, V.; Weber, O.; Rouchon, D.; Papon, A.M.; Cherkashin, N.

2008-01-01

We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite growth rate and Ge concentration increases with the pressure have been evidenced at low temperatures (650-750 deg. C). By contrast, the high temperature (950-1050 deg. C) Si growth rate either increases or decreases with pressure (gaseous precursor depending). We have then described the selective epitaxial growth process we use to form Si or Si 0.7 Ge 0.3 :B raised sources and drains on ultra-thin patterned Silicon-On-Insulator (SOI) substrates. We have afterwards presented the specifics of SiGe virtual substrates and of the tensile-strained Si layers grown on top (used as templates for the elaboration of tensily strained-SOI wafers). The tensile strain, which can be tailored from 1.3 up to 3 GPa, leads to an electron mobility gain by a factor of 2 in n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) built on top. High Ge content SiGe virtual substrates can also be used for the elaboration of compressively strained Ge channels, with impressive hole mobility gains (x9) compared to bulk Si. After that, we have described the main structural features of thick Ge layers grown directly on Si (that can be used as donor wafers for the elaboration of GeOI wafers or as the active medium of near infrared photo-detectors). Finally, we have shown how Si/SiGe multilayers can be used for the formation of high performance 3D devices such as multi-bridge channel or nano-beam gate-all-around FETs, the SiGe sacrificial layers being removed thanks to plasma dry etching, wet etching or in situ gaseous HCl etching
Comparison of Mg-based multilayers for solar He II radiation at 30.4 nm wavelength

Energy Technology Data Exchange (ETDEWEB)

Zhu Jingtao; Zhou Sika; Li Haochuan; Huang Qiushi; Wang Zhanshan; Le Guen, Karine; Hu, Min-Hui; Andre, Jean-Michel; Jonnard, Philippe

2010-07-10

Mg-based multilayers, including SiC/Mg, Co/Mg, B4C/Mg, and Si/Mg, are investigated for solar imaging and a He II calibration lamp at a 30.4 nm wavelength. These multilayers were fabricated by a magnetron sputtering method and characterized by x-ray reflection. The reflectivities of these multilayers were measured by synchrotron radiation. Near-normal-incidence reflectivities of Co/Mg and SiC/Mg multilayer mirrors are as high as 40.3% and 44.6%, respectively, while those of B4C/Mg and Si/Mg mirrors are too low for application. The measured results suggest that SiC/Mg, Co/Mg multilayers are promising for a 30.4 nm wavelength.
Surface patterning of multilayer graphene by ultraviolet laser irradiation in biomolecule sensing devices

Energy Technology Data Exchange (ETDEWEB)

Chang, Tien-Li, E-mail: tlchang@ntnu.edu.tw; Chen, Zhao-Chi

2015-12-30

Graphical abstract: - Highlights: • Direct UV laser irradiation on multilayer graphene was discussed. • Multilayer graphene with screen-printed process was presented. • Surface patterning of multilayer graphene at fluence threshold was investigated. • Electrical response of glucose in sensing devices can be studied. - Abstract: The study presents a direct process for surface patterning of multilayer graphene on the glass substrate as a biosensing device. In contrast to lithography with etching, the proposed process provides simultaneous surface patterning of multilayer graphene through nanosecond laser irradiation. In this study, the multilayer graphene was prepared by a screen printing process. Additionally, the wavelength of the laser beam was 355 nm. To perform the effective laser process with the small heat affected zone, the surface patterns on the sensing devices could be directly fabricated using the laser with optimal control of the pulse overlap at a fluence threshold of 0.63 J/cm{sup 2}. The unique patterning of the laser-ablated surface exhibits their electrical and hydrophilic characteristics. The hydrophilic surface of graphene-based sensing devices was achieved in the process with the pulse overlap of 90%. Furthermore, the sensing devices for controlling the electrical response of glucose by using glucose oxidase can be used in sensors in commercial medical applications.
Simple electrodepositing of CoFe/Cu multilayers: Effect of ferromagnetic layer thicknesses

Energy Technology Data Exchange (ETDEWEB)

Tekgül, Atakan, E-mail: atakantekgul@gmail.com [Akdeniz University, Physics Department, Science Faculty, TR-07058 Antalya (Turkey); Uludag University, Physics Department, Science and Literature Faculty, TR-16059 Bursa (Turkey); Alper, Mürsel [Uludag University, Physics Department, Science and Literature Faculty, TR-16059 Bursa (Turkey); Kockar, Hakan [Balikesir University, Physics Department, Science and Literature Faculty, TR-10145 Balikesir (Turkey)

2017-01-01

The CoFe/Cu magnetic multilayers were produced by changing CoFe ferromagnetic layers from 3 nm to 10 nm using electrodeposition. By now, the thinnest Cu (0.5 nm) layer thicknesses were used to see whether the GMR effect in the multilayers can be obtained or not since the pinning of non-magnetic layer between the ferromagnetic layers is required. For the proper depositions, the cyclic voltammograms was used, and the current–time transients were obtained. The Cu and CoFe layers were deposited at a cathode potential of −0.3 and −1.5 V with respect to saturated calomel electrode, respectively. From the XRD patterns, the multilayers were shown to be fcc crystal structures. For the magnetization measurements, saturation magnetization increases from 160 to 600 kA/m from 3 to 8 nm ferromagnetic layer thicknesses. And, the coercivity values increase until the 8 nm of the CoFe layer thickness. It is seen that the thin Cu layer (fixed at 0.5 nm) and pinholes support the random magnetization orientation and thus all multilayers exhibited the giant magnetoresistance (GMR) effect, and the highest GMR value was observed about 5.5%. And, the variation of GMR field sensitivity was calculated. The results show that the GMR and GMR sensitivity are compatible among the multilayers. The CoFe/Cu magnetic multilayers having GMR properties are used in GMR sensors and hard disk drive of the nano-technological devices. - Highlights: • The much thinner (0.5 nm) Cu layer was used to obtain the GMR effect on the electrodeposited CoFe/Cu multilayers. • All samples exhibited GMR and the maximum GMR value was 5.5%. • The M{sub s} and the H{sub c} changed with increasing magnetic layer thickness.
77 FR 5484 - Multilayered Wood Flooring From the People's Republic of China: Amended Antidumping and...

Science.gov (United States)

2012-02-03

..., tongue-and-groove construction or locking joints). All multilayered wood flooring is included within the... DEPARTMENT OF COMMERCE International Trade Administration [A-570-970, C-570-971] Multilayered Wood... (``CVD'') orders on multilayered wood flooring from the People's Republic of China (``PRC'') to remove an...
Overview of the CERES Edition-4 Multilayer Cloud Property Datasets

Science.gov (United States)

Chang, F. L.; Minnis, P.; Sun-Mack, S.; Chen, Y.; Smith, R. A.; Brown, R. R.

2014-12-01

Knowledge of the cloud vertical distribution is important for understanding the role of clouds on earth's radiation budget and climate change. Since high-level cirrus clouds with low emission temperatures and small optical depths can provide a positive feedback to a climate system and low-level stratus clouds with high emission temperatures and large optical depths can provide a negative feedback effect, the retrieval of multilayer cloud properties using satellite observations, like Terra and Aqua MODIS, is critically important for a variety of cloud and climate applications. For the objective of the Clouds and the Earth's Radiant Energy System (CERES), new algorithms have been developed using Terra and Aqua MODIS data to allow separate retrievals of cirrus and stratus cloud properties when the two dominant cloud types are simultaneously present in a multilayer system. In this paper, we will present an overview of the new CERES Edition-4 multilayer cloud property datasets derived from Terra as well as Aqua. Assessment of the new CERES multilayer cloud datasets will include high-level cirrus and low-level stratus cloud heights, pressures, and temperatures as well as their optical depths, emissivities, and microphysical properties.
Interlayer growth in Mo/B4C multilayered structures upon thermal annealing

International Nuclear Information System (INIS)

Nyabero, S. L.; Kruijs, R. W. E. van de; Yakshin, A. E.; Zoethout, E.; Bosgra, J.; Loch, R. A.; Blanckenhagen, G. von; Bijkerk, F.

2013-01-01

Both multilayer period thickness expansion and compaction were observed in Mo/B 4 C multilayers upon annealing, and the physical causes for this were explored in detail. Using in situ time-dependent grazing incidence X-ray reflectometry, period changes down to picometer-scale were resolved. It was shown that the changes depend on the thickness of the B 4 C layers, annealing temperature, and annealing time. Although strong stress relaxation during annealing was observed, it was excluded as a cause for period expansion. Auger electron spectroscopy and wide angle X-ray diffraction measurements revealed the growth of interlayers, with associated period changes influenced by the supply of B and C atoms to the growing compound interlayers. For multilayers with a Mo thickness of 3 nm, two regimes were recognized, depending on the deposited B 4 C thickness: in multilayers with B 4 C ≤ 1.5 nm, the supply of additional Mo into the already formed MoB x C y interlayer was dominant and led to densification, resulting in period compaction. For multilayers with B 4 C ≥ 2 nm, the B and C enrichment of interlayers formed low density compounds and yielded period expansion.
Direct Magnetic Relief Recording Using As40S60: Mn-Se Nanocomposite Multilayer Structures.

Science.gov (United States)

Stronski, A; Achimova, E; Paiuk, O; Meshalkin, A; Prisacar, A; Triduh, G; Oleksenko, P; Lytvyn, P

2017-12-01

Processes of holographic recording of surface relief structures using As 2 S 3 :Mn-Se multilayer nanostructures as registering media were studied in this paper. Optical properties of As 2 S 3 :Mn, Se layers, and As 2 S 3 :Mn-Se multilayer nanostructures were investigated. Values of optical bandgaps were obtained from Tauc dependencies. Surface relief diffraction gratings were recorded. Direct one-stage formation of surface relief using multilayer nanostructures is considered. For the first time, possibility of direct formation of magnetic relief simultaneous with surface relief formation under optical recording using As 2 S 3 :Mn-Se multilayer nanostructures is shown.
Structural color of a lycaenid butterfly: analysis of an aperiodic multilayer structure

International Nuclear Information System (INIS)

Yoshioka, S; Shimizu, Y; Kinoshita, S; Matsuhana, B

2013-01-01

We investigated the structural color of the green wing of the lycaenid butterfly Chrysozephyrus brillantinus. Electron microscopy revealed that the bottom plate of the cover scale on the wing consists of an alternating air–cuticle multilayer structure. However, the thicknesses of the layers were not constant but greatly differed depending on the layer, unlike the periodic multilayer designs often adopted for artificial laser-reflecting mirrors. The agreement between the experimentally determined and theoretically calculated reflectance spectra led us to conclude that the multilayer interference in the aperiodic system is the primary origin of the structural color. We analyzed optical interference in this aperiodic system using a simple analytical model and found that two spectral peaks arise from constructive interference among different parts of the multilayer structure. We discuss the advantages and disadvantages of the aperiodic system over a periodic one. (paper)
Multilayer Steel Materials Deformation Resistance and Roll Force Measurement

Directory of Open Access Journals (Sweden)

A. G. Kolesnikov

2014-01-01

Full Text Available To create new types of cars, raise their reliability, gain operational life, and decrease in metal consumption of products it is necessary to improve mechanical, physical, and also special properties of the constructional materials applied in mechanical engineering. Presently, there are intensive researches and developments under way to create materials with ultrafine-grained structure (the sizes of grains in their crystal lattice make less than 1 micron in one of the measurements.BMSTU developed a manufacturing technology of multilayer steel sheets with steady ultrafine-grained structure based on the multiple hot rolling of billet as a composition consisting of the alternating metal sheets. A principled condition for implementation of such technology is existence of different crystallographic modifications in the adjoining sheets of the composition at specified temperature of rolling.Power parameters of rolling are important technical characteristics of the process. Usually, to determine a deformation resistance value when rolling the diverse multilayer materials, is used the actual resistance value averaging in relation to the components of the composition. The aim of this work is a comparative analysis of known calculated dependences with experimental data when rolling the 100-layer samples. Objects of research were the 100-layer compositions based on the alternating layers of steel 08H18N10 and U8.Experimental samples represented the vacuumized capsules with height, width, and length of 53 mm x 53 mm x 200 mm, respectively, in which there were the 100-layer packs from sheets, each of 0.5 mm, based on the composition of steels (U8+08H18N10. Rolling was made on the double-high mill with rolls of 160 mm in diameter during 19 passes to the thickness of 7 mm with the speed of 0,1 m/s. Relative sinking in each pass was accepted to be equal 10±2,5%. Rolling forces were measured by the strain-gauging method using the measuring cells, located under
Automation Enhancement of Multilayer Laue Lenses

Energy Technology Data Exchange (ETDEWEB)

Lauer K. R.; Conley R.

2010-12-01

X-ray optics fabrication at Brookhaven National Laboratory has been facilitated by a new, state of the art magnetron sputtering physical deposition system. With its nine magnetron sputtering cathodes and substrate carrier that moves on a linear rail via a UHV brushless linear servo motor, the system is capable of accurately depositing the many thousands of layers necessary for multilayer Laue lenses. I have engineered a versatile and automated control program from scratch for the base system and many subsystems. Its main features include a custom scripting language, a fully customizable graphical user interface, wireless and remote control, and a terminal-based interface. This control system has already been successfully used in the creation of many types of x-ray optics, including several thousand layer multilayer Laue lenses.Before reaching the point at which a deposition can be run, stencil-like masks for the sputtering cathodes must be created to ensure the proper distribution of sputtered atoms. Quality of multilayer Laue lenses can also be difficult to measure, given the size of the thin film layers. I employ my knowledge of software and algorithms to further ease these previously painstaking processes with custom programs. Additionally, I will give an overview of an x-ray optic simulator package I helped develop during the summer of 2010. In the interest of keeping my software free and open, I have worked mostly with the multiplatform Python and the PyQt application framework, utilizing C and C++ where necessary.
Measurement, modeling, and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout

Science.gov (United States)

England, Troy; Curry, Matthew; Carr, Steve; Swartzentruber, Brian; Lilly, Michael; Bishop, Nathan; Carrol, Malcolm

2015-03-01

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance typical of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will discuss calibration data, as well as modeling and simulation of cryogenic silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) circuits connected to a silicon SET and operating at 4 K. We find a continuum of solutions from simple, single-HBT amplifiers to more complex, multi-HBT circuits suitable for integration, with varying noise levels and power vs. bandwidth tradeoffs. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.
High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition.

Science.gov (United States)

Klementová, Mariana; Palatinus, Lukás; Novotný, Filip; Fajgar, Radek; Subrt, Jan; Drínek, Vladislav

2013-06-01

Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy.
High efficiency multilayer blazed gratings for EUV and soft X-rays: Recent developments

International Nuclear Information System (INIS)

Voronov, Dmitriy; Ahn, Minseung; Anderson, Erik; Cambie, Rossana; Chang, Chih-Hao; Goray, Leonid; Gullikson, Eric; Heilmann, Ralf; Salmassi, Farhad; Schattenburg, Mark; Warwick, Tony; Yashchuk, Valeriy; Padmore, Howard

2011-01-01

Multilayer coated blazed gratings with high groove density are the best candidates for use in high resolution EUV and soft x-ray spectroscopy. Theoretical analysis shows that such a grating can be potentially optimized for high dispersion and spectral resolution in a desired high diffraction order without significant loss of diffraction efficiency. In order to realize this potential, the grating fabrication process should provide a perfect triangular groove profile and an extremely smooth surface of the blazed facets. Here we report on recent progress achieved at the Advanced Light Source (ALS) in fabrication of high quality multilayer coated blazed gratings. The blazed gratings were fabricated using scanning beam interference lithography followed by wet anisotropic etching of silicon. A 200 nm period grating coated with a Mo/Si multilayer composed with 30 bi-layers demonstrated an absolute efficiency of 37.6percent in the 3rd diffraction order at 13.6 nm wavelength. The groove profile of the grating was thoroughly characterized with atomic force microscopy before and after the multilayer deposition. The obtained metrology data were used for simulation of the grating efficiency with the vector electromagnetic PCGrate-6.1 code. The simulations showed that smoothing of the grating profile during the multilayer deposition is the main reason for efficiency losses compared to the theoretical maximum. Investigation of the grating with cross-sectional transmission electron microscopy revealed a complex evolution of the groove profile in the course of the multilayer deposition. Impact of the shadowing and smoothing processes on growth of the multilayer on the surface of the sawtooth substrate is discussed.
Evolutionary games on multilayer networks: a colloquium

Science.gov (United States)

Wang, Zhen; Wang, Lin; Szolnoki, Attila; Perc, Matjaž

2015-05-01

Networks form the backbone of many complex systems, ranging from the Internet to human societies. Accordingly, not only is the range of our interactions limited and thus best described and modeled by networks, it is also a fact that the networks that are an integral part of such models are often interdependent or even interconnected. Networks of networks or multilayer networks are therefore a more apt description of social systems. This colloquium is devoted to evolutionary games on multilayer networks, and in particular to the evolution of cooperation as one of the main pillars of modern human societies. We first give an overview of the most significant conceptual differences between single-layer and multilayer networks, and we provide basic definitions and a classification of the most commonly used terms. Subsequently, we review fascinating and counterintuitive evolutionary outcomes that emerge due to different types of interdependencies between otherwise independent populations. The focus is on coupling through the utilities of players, through the flow of information, as well as through the popularity of different strategies on different network layers. The colloquium highlights the importance of pattern formation and collective behavior for the promotion of cooperation under adverse conditions, as well as the synergies between network science and evolutionary game theory.
EUV multilayer defect compensation (MDC) by absorber pattern modification: from theory to wafer validation

Science.gov (United States)

Pang, Linyong; Hu, Peter; Satake, Masaki; Tolani, Vikram; Peng, Danping; Li, Ying; Chen, Dongxue

2011-11-01

According to the ITRS roadmap, mask defects are among the top technical challenges to introduce extreme ultraviolet (EUV) lithography into production. Making a multilayer defect-free extreme ultraviolet (EUV) blank is not possible today, and is unlikely to happen in the next few years. This means that EUV must work with multilayer defects present on the mask. The method proposed by Luminescent is to compensate effects of multilayer defects on images by modifying the absorber patterns. The effect of a multilayer defect is to distort the images of adjacent absorber patterns. Although the defect cannot be repaired, the images may be restored to their desired targets by changing the absorber patterns. This method was first introduced in our paper at BACUS 2010, which described a simple pixel-based compensation algorithm using a fast multilayer model. The fast model made it possible to complete the compensation calculations in seconds, instead of days or weeks required for rigorous Finite Domain Time Difference (FDTD) simulations. Our SPIE 2011 paper introduced an advanced compensation algorithm using the Level Set Method for 2D absorber patterns. In this paper the method is extended to consider process window, and allow repair tool constraints, such as permitting etching but not deposition. The multilayer defect growth model is also enhanced so that the multilayer defect can be "inverted", or recovered from the top layer profile using a calibrated model.
Exploring interface morphology of a deeply buried layer in periodic multilayer

Energy Technology Data Exchange (ETDEWEB)

Das, Gangadhar; Srivastava, A. K.; Tiwari, M. K., E-mail: mktiwari@rrcat.gov.in [Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013, Madhya Pradesh (India); Homi Bhabha National Institute, Anushaktinagar, Mumbai-400094, Maharashtra (India); Khooha, Ajay; Singh, A. K. [Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013, Madhya Pradesh (India)

2016-06-27

Long-term durability of a thin film device is strongly correlated with the nature of interface structure associated between different constituent layers. Synthetic periodic multilayer structures are primarily employed as artificial X-ray Bragg reflectors in many applications, and their reflection efficiency is predominantly dictated by the nature of the buried interfaces between the different layers. Herein, we demonstrate the applicability of the combined analysis approach of the X-ray reflectivity and grazing incidence X-ray fluorescence measurements for the reliable and precise determination of a buried interface structure inside periodic X-ray multilayer structures. X-ray standing wave field (XSW) generated under Bragg reflection condition is used to probe the different constituent layers of the W- B{sub 4}C multilayer structure at 10 keV and 12 keV incident X-ray energies. Our results show that the XSW assisted fluorescence measurements are markedly sensitive to the location and interface morphology of a buried layer structure inside a periodic multilayer structure. The cross sectional transmission electron microscopy results obtained on the W-B{sub 4}C multilayer structure provide a deeper look on the overall reliability and accuracy of the XSW method. The method described here would also be applicable for nondestructive characterization of a wide range of thin film based semiconductor and optical devices.

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