Gate Engineering in SOI LDMOS for Device Reliability

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Aanand

2016-01-01

Full Text Available A linearly graded doping drift region with step gate structure, used for improvement of reduced surface field (RESURF SOI LDMOS transistor performance has been simulated with 0.35µm technology in this paper. The proposed device has one poly gate and double metal gate arranged in a stepped manner, from channel to drift region. The first gate uses n+ poly (near source where as other two gates of aluminium. The first gate with thin gate oxide has good control over the channel charge. The third gate with thick gate oxide at drift region reduce gate to drain capacitance. The arrangement of second and third gates in a stepped manner in drift region spreads the electric field uniformly. Using two dimensional device simulations, the proposed SOI LDMOS is compared with conventional structure and the extended metal structure. We demonstrate that the proposed device exhibits significant enhancement in linearity, breakdown voltage, on-resistance and HCI. Double metal gate reduces the impact ionization area which helps to improve the Hot Carrier Injection effect..

Reference Range of Functional Data of Gated Myocardial Perfusion SPECT by Quantitative Gated SPECT of Cedars-Sinai and 4D-MSPECT of Michigan University

Energy Technology Data Exchange (ETDEWEB)

Kang, Do Young; Kim, Moo Hyun; Kim, Young Dae [College of Medicine, Univ. of Donga, Pusan (Korea, Republic of)

2003-07-01

Various programs have been developed for gating of myocardial perfusion SPECT. Among the those program, the most popular program is the Quantitative Gated SPECT (QGS)? developed by Cedars-Sinai hospital and most recently released program is 4D-MSPECT? developed by university of Michigan. It is important to know the reference range of the functional data of gated myocardial perfusion SPECT because it is necessary to determine abnormality of individual patient and echocardiographic data is different from those of gated SPECT. Tc-99m MIBI gated myocardial perfusion SPECT image was reconstructed by dual head gamma camera (Siemens, BCAM, esoft) as routine procedure and analyzed using QGS? and 4D-MSPECT? program. All patients (M: F=9: 18, Age 69{+-}9 yrs) showed normal myocardial perfusion. The patients with following characteristics were excluded: previous angina or MI history, ECG change with Q wave or ST-T change, diabetes melitius, hypercholesterolemia, typical chest pain, hypertension and cardiomyopathy. Pre-test likelihood of all patients was low. (1) In stress gated SPECT by QGS?, EDV was 73{+-}25 ml, ESV 25{+-}14 ml, EF 67{+-}11 % and area of first frame of gating 106.4{+-}21cm{sup 2}. In rest gated SPECT, EDV was 76{+-}26 ml, ESV 27{+-}15 ml, EF 66{+-}12 and area of first frame of gating 108{+-}20cm{sup 2}. (2) In stress gated SPECT by 4D-MSPECT?, EDV was 76{+-}28 ml, ESV 23{+-}16 ml, EF 72{+-}11 %, mass 115{+-}24 g and ungated volume 42{+-}15 ml. In rest gated SPECT, EDV was 75{+-}27 ml, ESV 23{+-}12 ml, EF 71{+-}9%, mass 113{+-}25g and ungate dvolume 42{+-}15 ml, (3) s-EDV, s-EF, r-ESV and r-EF were significantly different between QGS? and 4D-MSPECT? (each p=0.016, p<0.001. p=0.003 and p=0.001). We determined the normal reference range of functional parameters by QGS? and 4D-MSPECT? program to diagnose individually the abnormality of patients. And the reference ranges have to adopted to be patients by each specific gating program.

Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

Science.gov (United States)

Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

2013-06-21

We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

Respiratory gating during stereotactic body radiotherapy for lung cancer reduces tumor position variability.

Science.gov (United States)

Saito, Tetsuo; Matsuyama, Tomohiko; Toya, Ryo; Fukugawa, Yoshiyuki; Toyofuku, Takamasa; Semba, Akiko; Oya, Natsuo

2014-01-01

We evaluated the effects of respiratory gating on treatment accuracy in lung cancer patients undergoing lung stereotactic body radiotherapy by using electronic portal imaging device (EPID) images. Our study population consisted of 30 lung cancer patients treated with stereotactic body radiotherapy (48 Gy/4 fractions/4 to 9 days). Of these, 14 were treated with- (group A) and 16 without gating (group B); typically the patients whose tumors showed three-dimensional respiratory motion ≧5 mm were selected for gating. Tumor respiratory motion was estimated using four-dimensional computed tomography images acquired during treatment simulation. Tumor position variability during all treatment sessions was assessed by measuring the standard deviation (SD) and range of tumor displacement on EPID images. The two groups were compared for tumor respiratory motion and position variability using the Mann-Whitney U test. The median three-dimensional tumor motion during simulation was greater in group A than group B (9 mm, range 3-30 mm vs. 2 mm, range 0-4 mm; psimulation, tumor position variability in the EPID images was low and comparable to patients treated without gating. This demonstrates the benefit of respiratory gating.

In vivo time-gated diffuse correlation spectroscopy at quasi-null source-detector separation.

Science.gov (United States)

Pagliazzi, M; Sekar, S Konugolu Venkata; Di Sieno, L; Colombo, L; Durduran, T; Contini, D; Torricelli, A; Pifferi, A; Mora, A Dalla

2018-06-01

We demonstrate time domain diffuse correlation spectroscopy at quasi-null source-detector separation by using a fast time-gated single-photon avalanche diode without the need of time-tagging electronics. This approach allows for increased photon collection, simplified real-time instrumentation, and reduced probe dimensions. Depth discriminating, quasi-null distance measurement of blood flow in a human subject is presented. We envision the miniaturization and integration of matrices of optical sensors of increased spatial resolution and the enhancement of the contrast of local blood flow changes.

Temperature dependence of the current in Schottky-barrier source-gated transistors

Science.gov (United States)

Sporea, R. A.; Overy, M.; Shannon, J. M.; Silva, S. R. P.

2015-05-01

The temperature dependence of the drain current is an important parameter in thin-film transistors. In this paper, we propose that in source-gated transistors (SGTs), this temperature dependence can be controlled and tuned by varying the length of the source electrode. SGTs comprise a reverse biased potential barrier at the source which controls the current. As a result, a large activation energy for the drain current may be present which, although useful in specific temperature sensing applications, is in general deleterious in many circuit functions. With support from numerical simulations with Silvaco Atlas, we describe how increasing the length of the source electrode can be used to reduce the activation energy of SGT drain current, while maintaining the defining characteristics of SGTs: low saturation voltage, high output impedance in saturation, and tolerance to geometry variations. In this study, we apply the dual current injection modes to obtain drain currents with high and low activation energies and propose mechanisms for their exploitation in future large-area integrated circuit designs.

Research on range-gated laser active imaging seeker

Science.gov (United States)

You, Mu; Wang, PengHui; Tan, DongJie

2013-09-01

Compared with other imaging methods such as millimeter wave imaging, infrared imaging and visible light imaging, laser imaging provides both a 2-D array of reflected intensity data as well as 2-D array of range data, which is the most important data for use in autonomous target acquisition .In terms of application, it can be widely used in military fields such as radar, guidance and fuse. In this paper, we present a laser active imaging seeker system based on range-gated laser transmitter and sensor technology .The seeker system presented here consist of two important part, one is laser image system, which uses a negative lens to diverge the light from a pulse laser to flood illuminate a target, return light is collected by a camera lens, each laser pulse triggers the camera delay and shutter. The other is stabilization gimbals, which is designed to be a rotatable structure both in azimuth and elevation angles. The laser image system consists of transmitter and receiver. The transmitter is based on diode pumped solid-state lasers that are passively Q-switched at 532nm wavelength. A visible wavelength was chosen because the receiver uses a Gen III image intensifier tube with a spectral sensitivity limited to wavelengths less than 900nm.The receiver is image intensifier tube's micro channel plate coupled into high sensitivity charge coupled device camera. The image has been taken at range over one kilometer and can be taken at much longer range in better weather. Image frame frequency can be changed according to requirement of guidance with modifiable range gate, The instantaneous field of views of the system was found to be 2×2 deg. Since completion of system integration, the seeker system has gone through a series of tests both in the lab and in the outdoor field. Two different kinds of buildings have been chosen as target, which is located at range from 200m up to 1000m.To simulate dynamic process of range change between missile and target, the seeker system has

Study of surface-modified PVP gate dielectric in organic thin film transistors with the nano-particle silver ink source/drain electrode.

Science.gov (United States)

Yun, Ho-Jin; Ham, Yong-Hyun; Shin, Hong-Sik; Jeong, Kwang-Seok; Park, Jeong-Gyu; Choi, Deuk-Sung; Lee, Ga-Won

2011-07-01

We have fabricated the flexible pentacene based organic thin film transistors (OTFTs) with formulated poly[4-vinylphenol] (PVP) gate dielectrics treated by CF4/O2 plasma on poly[ethersulfones] (PES) substrate. The solution of gate dielectrics is made by adding methylated poly[melamine-co-formaldehyde] (MMF) to PVP. The PVP gate dielectric layer was cross linked at 90 degrees under UV ozone exposure. Source/drain electrodes are formed by micro contact printing (MCP) method using nano particle silver ink for the purposes of low cost and high throughput. The optimized OTFT shows the device performance with field effect mobility of the 0.88 cm2/V s, subthreshold slope of 2.2 V/decade, and on/off current ratios of 1.8 x 10(-6) at -40 V gate bias. We found that hydrophobic PVP gate dielectric surface can influence on the initial film morphologies of pentacene making dense, which is more important for high performance OTFTs than large grain size. Moreover, hydrophobic gate dielelctric surface reduces voids and -OH groups that interrupt the carrier transport in OTFTs.

Comprehensive study of gate-terminated and source-terminated field-plate 0.13 µm NMOS transistors

International Nuclear Information System (INIS)

Chiu, Hsien-Chin; Lin, Shao-Wei; Cheng, Chia-Shih; Wei, Chien-Cheng

2008-01-01

This study systematically investigated microwave noise, power and linearity characteristics of field-plate (FP) 0.13 µm CMOS transistors in which the field-plate metal is connected to the gate terminal and the source terminal. The gate-terminated FP NMOS (FP-G NMOS) provided the best noise figure (NF) at 6 GHz compared with standard devices and the source-terminated FP device (FP-S NMOS) as the lowest gate resistance (R g ) was obtained by this structure. By adopting the field-plate metal in NMOS, both FP-S and FP-G devices achieved higher current density at high gate bias voltages. Moreover, these two devices also had higher efficiency under high drain-to-source voltages at the high input power swing. The third-order inter-modulation product (IM3) is −39.4 dBm for FP-S NMOS at P in of −20 dBm; the corresponding values for FP-G and standard devices are −34.9 dBm and −37.3 dBm, respectively. Experimental results indicate that the FP-G architecture is suitable for low noise applications and FP-S is suitable for high power and high linearity operation

Precise linear gating circuit on integrated microcircuits

Energy Technology Data Exchange (ETDEWEB)

Butskii, V.V.; Vetokhin, S.S.; Reznikov, I.V.

Precise linear gating circuit on four microcircuits is described. A basic flowsheet of the gating circuit is given. The gating circuit consists of two input differential cascades total load of which is two current followers possessing low input and high output resistances. Follower outlets are connected to high ohmic dynamic load formed with a current source which permits to get high amplification (>1000) at one cascade. Nonlinearity amounts to <0.1% in the range of input signal amplitudes of -10-+10 V. Front duration for an output signal with 10 V amplitude amounts to 100 ns. Attenuation of input signal with a closed gating circuit is 60 db. The gating circuits described is used in the device intended for processing of scintillation sensor signals.

GATE Monte Carlo simulation of dose distribution using MapReduce in a cloud computing environment.

Science.gov (United States)

Liu, Yangchuan; Tang, Yuguo; Gao, Xin

2017-12-01

The GATE Monte Carlo simulation platform has good application prospects of treatment planning and quality assurance. However, accurate dose calculation using GATE is time consuming. The purpose of this study is to implement a novel cloud computing method for accurate GATE Monte Carlo simulation of dose distribution using MapReduce. An Amazon Machine Image installed with Hadoop and GATE is created to set up Hadoop clusters on Amazon Elastic Compute Cloud (EC2). Macros, the input files for GATE, are split into a number of self-contained sub-macros. Through Hadoop Streaming, the sub-macros are executed by GATE in Map tasks and the sub-results are aggregated into final outputs in Reduce tasks. As an evaluation, GATE simulations were performed in a cubical water phantom for X-ray photons of 6 and 18 MeV. The parallel simulation on the cloud computing platform is as accurate as the single-threaded simulation on a local server and the simulation correctness is not affected by the failure of some worker nodes. The cloud-based simulation time is approximately inversely proportional to the number of worker nodes. For the simulation of 10 million photons on a cluster with 64 worker nodes, time decreases of 41× and 32× were achieved compared to the single worker node case and the single-threaded case, respectively. The test of Hadoop's fault tolerance showed that the simulation correctness was not affected by the failure of some worker nodes. The results verify that the proposed method provides a feasible cloud computing solution for GATE.

Novel technique of source and drain engineering for dual-material double-gate (DMDG) SOI MOSFETS

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Yadav, Himanshu; Malviya, Abhishek Kumar; Chauhan, R. K.

2018-04-01

The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened ION current with higher ION to IOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain

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Liu, Liang-kui; Shi, Cheng; Zhang, Yi-bo; Sun, Lei

2017-04-01

A tri gate Ge-based tunneling field-effect transistor (TFET) has been numerically studied with technology computer aided design (TCAD) tools. Dopant segregated Schottky source/drain is applied to the device structure design (DS-TFET). The characteristics of the DS-TFET are compared and analyzed comprehensively. It is found that the performance of n-channel tri gate DS-TFET with a positive bias is insensitive to the dopant concentration and barrier height at n-type drain, and that the dopant concentration and barrier height at a p-type source considerably affect the device performance. The domination of electron current in the entire BTBT current of this device accounts for this phenomenon and the tri-gate DS-TFET is proved to have a higher performance than its dual-gate counterpart.

The optimal design of 15 nm gate-length junctionless SOI FinFETs for reducing leakage current

International Nuclear Information System (INIS)

Liu, Xi; Wu, Meile; Jin, Xiaoshi; Chuai, Rongyan; Lee, Jung-Hee; Lee, Jong-Ho

2013-01-01

Junctionless (JL) transistors need to be heavily doped to have large drain current in the ON-state, which engenders the effect of band-to-band tunneling (BTBT) in the OFF-state simultaneously. It causes an obvious increase of the leakage current in the OFF-state. This paper presents an effective method of reducing the leakage current by changing the geometrical shape and dimension of the oxide layer under the edge of the gate. The optimal design of 15 nm gate-length JL silicon-on-insulator FinFETs with the triple-gate structure is performed for reducing the effect of BTBT through simulation and analysis by this means. (paper)

Modified impedance source inverter for power conditioning system

Indian Academy of Sciences (India)

DC link voltage boost, reduced total harmonic distortion of output current and voltage, better voltage gain and wide range of output voltage controlcan be achieved easily with improved power quality. Experimental set-up of the modified impedance source inverter with Field Programmable Gate Array (FPGA) controller has ...

Trapped-ion quantum logic gates based on oscillating magnetic fields.

Science.gov (United States)

Ospelkaus, C; Langer, C E; Amini, J M; Brown, K R; Leibfried, D; Wineland, D J

2008-08-29

Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing (QIP). With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ion crystal and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering, a fundamental source of decoherence in laser-mediated gates.

Effective dark count rate reduction by modified SPAD gating circuit

Energy Technology Data Exchange (ETDEWEB)

Prochazka, Ivan; Blazej, Josef, E-mail: blazej@fjfi.cvut.cz; Kodet, Jan

2015-07-01

For our main application of single photon counting avalanche detectors in focus – laser ranging of space objects and laser time transfer – the ultimate requirements are relatively large and homogeneous active area having a diameter of 100 to 200 µm and a sub-picosecond stability of timing. The detector dark count rate and after-pulsing probability are parameters of relatively lower, but not negligible importance. In presented paper we will focused on them. We have developed a new active quenching and gating scheme which can reduce afterpulsing effect and hence also effective dark count rate at lower temperature. In satellite laser ranging system the effective dark count rate was reduced more than 35 times. This improvement will contribute in increasing the data yield and hence to increase precision and productivity. - Highlights: • Signal and quenching path in a control circuit stayed unaffected by gating. • The detector package optimized for laser time transfer systems is considered. • After-pulsing effect is reduced by a modification of the use of gate signal. • The dark count rate is reduced for gate rates of the order of units of kHz.

Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performance.

Science.gov (United States)

Khan, Mansoor Ali; Heo, Jun-Woo; Kim, Hyun-Seok; Park, Hyun-Chang

2014-11-01

In this work, different gate-head structures have been compared in the context of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). Field-plate (FP) technology self-aligned to the gate electrode leads to various gate-head structures, most likely gamma (γF)-gate, camel (see symbol)-gate, and mushroom-shaped (T)-gate. In-depth comparison of recessed gate-head structures demonstrated that key performance metrics such as transconductance, output current, and breakdown voltage are better with the T-gate head structure. The recessed T-gate with its one arm toward the source side not only reduces the source-access resistance (R(g) +R(gs)), but also minimizes the source-side dispersion and current leakage, resulting in high transconductance (G(m)) and output current (I(DS)). At the same time, the other arm toward the drain-side reduces the drain-side dispersion and tends to distribute electric field peaks uniformly, resulting in high breakdown voltage (V(BR)). DC and RF analysis showed that the recessed T-gate FP-HEMT is a suitable candidate not only for high-frequency operation, but also for high-power applications.

A new DG nanoscale TFET based on MOSFETs by using source gate electrode: 2D simulation and an analytical potential model

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Ramezani, Zeinab; Orouji, Ali A.

2017-08-01

This paper suggests and investigates a double-gate (DG) MOSFET, which emulates tunnel field effect transistors (M-TFET). We have combined this novel concept into a double-gate MOSFET, which behaves as a tunneling field effect transistor by work function engineering. In the proposed structure, in addition to the main gate, we utilize another gate over the source region with zero applied voltage and a proper work function to convert the source region from N+ to P+. We check the impact obtained by varying the source gate work function and source doping on the device parameters. The simulation results of the M-TFET indicate that it is a suitable case for a switching performance. Also, we present a two-dimensional analytic potential model of the proposed structure by solving the Poisson's equation in x and y directions and by derivatives from the potential profile; thus, the electric field is achieved. To validate our present model, we use the SILVACO ATLAS device simulator. The analytical results have been compared with it.

Self-Heating Effects In Polysilicon Source Gated Transistors

Science.gov (United States)

Sporea, R. A.; Burridge, T.; Silva, S. R. P.

2015-01-01

Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may lead to undesirable thermal runaway effects and even device failure through self-heating. Using numerical simulations we show that, even in highly thermally-confined scenarios and at high current levels, self-heating is insufficient to compromise device integrity. Performance is minimally affected through a modest increase in output conductance, which may limit the maximum attainable gain. Measurements on polysilicon devices confirm the simulated results, with even smaller penalties in performance, largely due to improved heat dissipation through metal contacts. We conclude that SGTs can be reliably used for high gain, power efficient analog and digital circuits without significant performance impact due to self-heating. This further demonstrates the robustness of SGTs. PMID:26351099

The mechano-gated channel inhibitor GsMTx4 reduces the exercise pressor reflex in decerebrate rats.

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Copp, Steven W; Kim, Joyce S; Ruiz-Velasco, Victor; Kaufman, Marc P

2016-02-01

Mechanical and metabolic stimuli from contracting muscles evoke reflex increases in blood pressure, heart rate and sympathetic nerve activity. Little is known, however, about the nature of the mechano-gated channels on the thin fibre muscle afferents that contribute to evoke this reflex, termed the exercise pressor reflex. We determined the effect of GsMTx4, an inhibitor of mechano-gated Piezo channels, on the exercise pressor reflex evoked by intermittent contraction of the triceps surae muscles in decerebrated, unanaesthetized rats. GsMTx4 reduced the pressor, cardioaccelerator and renal sympathetic nerve responses to intermittent contraction but did not reduce the pressor responses to femoral arterial injection of compounds that stimulate the metabolically-sensitive thin fibre muscle afferents. Expression levels of Piezo2 channels were greater than Piezo1 channels in rat dorsal root ganglia. Our findings suggest that mechanically-sensitive Piezo proteins contribute to the generation of the mechanical component of the exercise pressor reflex in rats. Mechanical and metabolic stimuli within contracting skeletal muscles evoke reflex autonomic and cardiovascular adjustments. In cats and rats, gadolinium has been used to investigate the role played by the mechanical component of this reflex, termed the exercise pressor reflex. Gadolinium, however, has poor selectivity for mechano-gated channels and exerts multiple off-target effects. We tested the hypothesis that GsMTX4, a more selective mechano-gated channel inhibitor than gadolinium and a particularly potent inhibitor of mechano-gated Piezo channels, reduced the exercise pressor reflex in decerebrate rats. Injection of 10 μg of GsMTx4 into the arterial supply of the hindlimb reduced the peak pressor (control: 24 ± 5, GsMTx4: 12 ± 5 mmHg, P acid. Moreover, injection of 10 μg of GsMTx4 into the arterial supply of the hindlimb reduced the peak pressor (control: 24 ± 2, GsMTx4: 14 ± 3 mmHg, P reflex in

Quantum cost optimized design of 4-bit reversible universal shift register using reduced number of logic gate

Science.gov (United States)

Maity, H.; Biswas, A.; Bhattacharjee, A. K.; Pal, A.

In this paper, we have proposed the design of quantum cost (QC) optimized 4-bit reversible universal shift register (RUSR) using reduced number of reversible logic gates. The proposed design is very useful in quantum computing due to its low QC, less no. of reversible logic gate and less delay. The QC, no. of gates, garbage outputs (GOs) are respectively 64, 8 and 16 for proposed work. The improvement of proposed work is also presented. The QC is 5.88% to 70.9% improved, no. of gate is 60% to 83.33% improved with compared to latest reported result.

Analytical model of nanoscale junctionless transistors towards controlling of short channel effects through source/drain underlap and channel thickness engineering

Science.gov (United States)

Roy, Debapriya; Biswas, Abhijit

2018-01-01

We develop a 2D analytical subthreshold model for nanoscale double-gate junctionless transistors (DGJLTs) with gate-source/drain underlap. The model is validated using well-calibrated TCAD simulation deck obtained by comparing experimental data in the literature. To analyze and control short-channel effects, we calculate the threshold voltage, drain induced barrier lowering (DIBL) and subthreshold swing of DGJLTs using our model and compare them with corresponding simulation value at channel length of 20 nm with channel thickness tSi ranging 5-10 nm, gate-source/drain underlap (LSD) values 0-7 nm and source/drain doping concentrations (NSD) ranging 5-12 × 1018 cm-3. As tSi reduces from 10 to 5 nm DIBL drops down from 42.5 to 0.42 mV/V at NSD = 1019 cm-3 and LSD = 5 nm in contrast to decrement from 71 to 4.57 mV/V without underlap. For a lower tSiDIBL increases marginally with increasing NSD. The subthreshold swing reduces more rapidly with thinning of channel thickness rather than increasing LSD or decreasing NSD.

Respiratory gating in positron emission tomography: A quantitative comparison of different gating schemes

International Nuclear Information System (INIS)

Dawood, Mohammad; Buether, Florian; Lang, Norbert; Schober, Otmar; Schaefers, Klaus P

2007-01-01

Respiratory gating is used for reducing the effects of breathing motion in a wide range of applications from radiotherapy treatment to diagnostical imaging. Different methods are feasible for respiratory gating. In this study seven gating methods were developed and tested on positron emission tomography (PET) listmode data. The results of seven patient studies were compared quantitatively with respect to motion and noise. (1) Equal and (2) variable time-based gating methods use only the time information of the breathing cycle to define respiratory gates. (3) Equal and (4) variable amplitude-based gating approaches utilize the amplitude of the respiratory signal. (5) Cycle-based amplitude gating is a combination of time and amplitude-based techniques. A baseline correction was applied to methods (3) and (4) resulting in two new approaches: Baseline corrected (6) equal and (7) variable amplitude-based gating. Listmode PET data from seven patients were acquired together with a respiratory signal. Images were reconstructed applying the seven gating methods. Two parameters were used to quantify the results: Motion was measured as the displacement of the heart due to respiration and noise was defined as the standard deviation of pixel intensities in a background region. The amplitude-based approaches (3) and (4) were superior to the time-based methods (1) and (2). The improvement in capturing the motion was more than 30% (up to 130%) in all subjects. The variable time (2) and amplitude (4) methods had a more uniform noise distribution among all respiratory gates compared to equal time (1) and amplitude (3) methods. Baseline correction did not improve the results. Out of seven different respiratory gating approaches, the variable amplitude method (4) captures the respiratory motion best while keeping a constant noise level among all respiratory phases

Ultrafast gated imaging of laser produced plasmas using the optical Kerr effect

International Nuclear Information System (INIS)

Symes, D. R.; Wegner, U.; Ahlswede, H.-C.; Streeter, M. J. V.; Gallegos, P. L.; Divall, E. J.; Rajeev, P. P.; Neely, D.; Smith, R. A.

2010-01-01

Optical imaging is a versatile diagnostic for investigations of plasmas generated under intense laser irradiation. Electro-optic gating techniques operating on the >100 ps timescale are commonly used to reduce the amount of light detected from self-emission of hot plasma or improve the temporal resolution of the detector. The use of an optical Kerr gate enables a superior dynamic range and temporal resolution compared to electronically gated devices. The application of this method for enhanced imaging of laser produced plasmas with gate time ∼100 fs is demonstrated, and the possibility to produce a sub-10 fs, high dynamic range 'all optical' streak camera is discussed.

Method of making a self-aligned schottky metal semi-conductor field effect transistor with buried source and drain

International Nuclear Information System (INIS)

Bol, I.

1984-01-01

A semi-conductor structure and particularly a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source and drain areas at a predetermined range of depths followed by very localized laser annealing to electrically reactivate the amorphous buried source and drain areas thereby providing effective vertical separation of the channel from the buried source and drain respectively. Accordingly, spatial separations between the self-aligned gate-to-drain, and gate-to-source can be relatively very closely controlled by varying the doping intensity and duration of the implantation thereby reducing the series resistance and increasing the operating speed

A progressively reduced pretension method to fabricate Bradbury-Nielsen gates with uniform tension

International Nuclear Information System (INIS)

Ni, Kai; Guo, Jingran; Yu, Zhou; Cao, Like; Yu, Quan; Qian, Xiang; Wang, Xiaohao

2015-01-01

A Bradbury-Nielsen gate (BNG) is often used to modulate ion beams. It consists of two interleaved and electrically isolated sets of wires with uniform tension, which ideally keep parallel, equidistant, and coplanar over a wide temperature range, making the BNG reliable and robust. We have previously analyzed the non-uniformity problem of wire tensions with sequentially winding method and developed a template-based transfer method to solve this problem. In this paper, we introduced a progressively reduced pretension method, which allows directly and sequentially fixing wires onto the substrate without using a template. Theoretical analysis shows that by applying proper pretension to each wire when fixing it, the final wire tensions of all wires can be uniform. The algorithm and flowchart to calculate the pretension sequence are given, and the fabrication process is introduced in detail. Pretensions are generated by weight combination with a weaving device. A BNG with stainless steel wire and a printed circuit board substrate is constructed with this method. The non-uniformity of the final wire tensions is less than 2.5% in theory. The BNG is successfully employed in our ion mobility spectrometer, and the measured resolution is 33.5 at a gate opening time of 350 μs. Compared to the template-based method, this method is simpler, faster, and more flexible with comparable production quality when manufacturing BNGs with different configurations

3D range-gated super-resolution imaging based on stereo matching for moving platforms and targets

Science.gov (United States)

Sun, Liang; Wang, Xinwei; Zhou, Yan

2017-11-01

3D range-gated superresolution imaging is a novel 3D reconstruction technique for target detection and recognition with good real-time performance. However, for moving targets or platforms such as airborne, shipborne, remote operated vehicle and autonomous vehicle, 3D reconstruction has a large error or failure. In order to overcome this drawback, we propose a method of stereo matching for 3D range-gated superresolution reconstruction algorithm. In experiment, the target is a doll of Mario with a height of 38cm at the location of 34m, and we obtain two successive frame images of the Mario. To confirm our method is effective, we transform the original images with translation, rotation, scale and perspective, respectively. The experimental result shows that our method has a good result of 3D reconstruction for moving targets or platforms.

SU-E-J-145: Validation of An Analytical Model for in Vivo Range Verification Using GATE Monte Carlo Simulation in Proton Therapy

International Nuclear Information System (INIS)

Lee, C; Lin, H; Chao, T; Hsiao, I; Chuang, K

2015-01-01

Purpose: Predicted PET images on the basis of analytical filtering approach for proton range verification has been successful developed and validated using FLUKA Monte Carlo (MC) codes and phantom measurements. The purpose of the study is to validate the effectiveness of analytical filtering model for proton range verification on GATE/GEANT4 Monte Carlo simulation codes. Methods: In this study, we performed two experiments for validation of predicted β+-isotope by the analytical model with GATE/GEANT4 simulations. The first experiments to evaluate the accuracy of predicting β+-yields as a function of irradiated proton energies. In second experiment, we simulate homogeneous phantoms of different materials irradiated by a mono-energetic pencil-like proton beam. The results of filtered β+-yields distributions by the analytical model is compared with those of MC simulated β+-yields in proximal and distal fall-off ranges. Results: The results investigate the distribution between filtered β+-yields and MC simulated β+-yields distribution in different conditions. First, we found that the analytical filtering can be applied over the whole range of the therapeutic energies. Second, the range difference between filtered β+-yields and MC simulated β+-yields at the distal fall-off region are within 1.5mm for all materials used. The findings validated the usefulness of analytical filtering model on range verification of proton therapy on GATE Monte Carlo simulations. In addition, there is a larger discrepancy between filtered prediction and MC simulated β+-yields using GATE code, especially in proximal region. This discrepancy might Result from the absence of wellestablished theoretical models for predicting the nuclear interactions. Conclusion: Despite the fact that large discrepancies of the distributions between MC-simulated and predicted β+-yields were observed, the study prove the effectiveness of analytical filtering model for proton range verification using

Audiovisual biofeedback improves image quality and reduces scan time for respiratory-gated 3D MRI

Science.gov (United States)

Lee, D.; Greer, P. B.; Arm, J.; Keall, P.; Kim, T.

2014-03-01

The purpose of this study was to test the hypothesis that audiovisual (AV) biofeedback can improve image quality and reduce scan time for respiratory-gated 3D thoracic MRI. For five healthy human subjects respiratory motion guidance in MR scans was provided using an AV biofeedback system, utilizing real-time respiratory motion signals. To investigate the improvement of respiratory-gated 3D MR images between free breathing (FB) and AV biofeedback (AV), each subject underwent two imaging sessions. Respiratory-related motion artifacts and imaging time were qualitatively evaluated in addition to the reproducibility of external (abdominal) motion. In the results, 3D MR images in AV biofeedback showed more anatomic information such as a clear distinction of diaphragm, lung lobes and sharper organ boundaries. The scan time was reduced from 401±215 s in FB to 334±94 s in AV (p-value 0.36). The root mean square variation of the displacement and period of the abdominal motion was reduced from 0.4±0.22 cm and 2.8±2.5 s in FB to 0.1±0.15 cm and 0.9±1.3 s in AV (p-value of displacement audiovisual biofeedback improves image quality and reduces scan time for respiratory-gated 3D MRI. These results suggest that AV biofeedback has the potential to be a useful motion management tool in medical imaging and radiation therapy procedures.

Sensing small neurotransmitter-enzyme interaction with nanoporous gated ion-sensitive field effect transistors.

Science.gov (United States)

Kisner, Alexandre; Stockmann, Regina; Jansen, Michael; Yegin, Ugur; Offenhäusser, Andreas; Kubota, Lauro Tatsuo; Mourzina, Yulia

2012-01-15

Ion-sensitive field effect transistors with gates having a high density of nanopores were fabricated and employed to sense the neurotransmitter dopamine with high selectivity and detectability at micromolar range. The nanoporous structure of the gates was produced by applying a relatively simple anodizing process, which yielded a porous alumina layer with pores exhibiting a mean diameter ranging from 20 to 35 nm. Gate-source voltages of the transistors demonstrated a pH-dependence that was linear over a wide range and could be understood as changes in surface charges during protonation and deprotonation. The large surface area provided by the pores allowed the physical immobilization of tyrosinase, which is an enzyme that oxidizes dopamine, on the gates of the transistors, and thus, changes the acid-base behavior on their surfaces. Concentration-dependent dopamine interacting with immobilized tyrosinase showed a linear dependence into a physiological range of interest for dopamine concentration in the changes of gate-source voltages. In comparison with previous approaches, a response time relatively fast for detecting dopamine was obtained. Additionally, selectivity assays for other neurotransmitters that are abundantly found in the brain were examined. These results demonstrate that the nanoporous structure of ion-sensitive field effect transistors can easily be used to immobilize specific enzyme that can readily and selectively detect small neurotransmitter molecule based on its acid-base interaction with the receptor. Therefore, it could serve as a technology platform for molecular studies of neurotransmitter-enzyme binding and drugs screening. Copyright © 2011 Elsevier B.V. All rights reserved.

pH sensing characteristics and biosensing application of solution-gated reduced graphene oxide field-effect transistors.

Science.gov (United States)

Sohn, Il-Yung; Kim, Duck-Jin; Jung, Jin-Heak; Yoon, Ok Ja; Thanh, Tien Nguyen; Quang, Trung Tran; Lee, Nae-Eung

2013-07-15

Solution-gated reduced graphene oxide field-effect transistors (R-GO FETs) were investigated for pH sensing and biochemical sensing applications. A channel of a networked R-GO film formed by self-assembly was incorporated as a sensing layer into a solution-gated FET structure for pH sensing and the detection of acetylcholine (Ach), which is a neurotransmitter in the nerve system, through enzymatic reactions. The fabricated R-GO FET was sensitive to protons (H(+)) with a pH sensitivity of 29 mV/pH in terms of the shift of the charge neutrality point (CNP), which is attributed to changes in the surface potential caused by the interaction of protons with OH surface functional groups present on the R-GO surface. The R-GO FET immobilized with acetylcholinesterase (AchE) was used to detect Ach in the concentration range of 0.1-10mM by sensing protons generated during the enzymatic reactions. The results indicate that R-GO FETs provide the capability to detect protons, demonstrating their applicability as a biosensing device for enzymatic reactions. Copyright © 2013 Elsevier B.V. All rights reserved.

Efficient one- and two-qubit pulsed gates for an oscillator-stabilized Josephson qubit

International Nuclear Information System (INIS)

Brito, Frederico; DiVincenzo, David P; Koch, Roger H; Steffen, Matthias

2008-01-01

We present theoretical schemes for performing high-fidelity one- and two-qubit pulsed gates for a superconducting flux qubit. The 'IBM qubit' consists of three Josephson junctions, three loops and a superconducting transmission line. Assuming a fixed inductive qubit-qubit coupling, we show that the effective qubit-qubit interaction is tunable by changing the applied fluxes, and can be made negligible, allowing one to perform high-fidelity single qubit gates. Our schemes are tailored to alleviate errors due to 1/f noise; we find gates with only 1% loss of fidelity due to this source, for pulse times in the range of 20-30 ns for one-qubit gates (Z rotations, Hadamard) and 60 ns for a two-qubit gate (controlled-Z). Our relaxation and dephasing time estimates indicate a comparable loss of fidelity from this source. The control of leakage plays an important role in the design of our shaped pulses, preventing shorter pulse times. However, we have found that imprecision in the control of the quantum phase plays a major role in the limitation of the fidelity of our gates

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

Science.gov (United States)

Kumar, Manoj; Pratap, Yogesh; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

2017-12-01

In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported, to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions. This novel structure offers low barrier height at the source and offers high ON-state current. The I ON/I OFF of ISE-CGAA-SB-MOSFET increases by 1177 times and offers steeper subthreshold slope (~60 mV/decade). However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate, dual metal gate, single metal gate with ISE, and dual metal gate with ISE has been presented. The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design. The numerical simulation is performed using the ATLAS-3D device simulator.

Improvement of Lambert-Beer law dynamic range by the use of temporal gates on transmitted light pulse through a scattering medium

International Nuclear Information System (INIS)

Yoshino, Hironori; Wada, Kenji; Horinaka, Hiromichi; Cho, Yoshio; Umeda, Tokuo; Osawa, Masahiko.

1995-01-01

The Lambert-Beer law holding for pulsed lights transmitted through a scattering medium was examined using a streak camera. The Lambert-Beer law dynamic range is found to be limited by floor levels that are caused by scattered photons and are controllable by the use of a temporal gate on the transmitted pulse. The dynamic range improvement obtained for a scattering medium of 2.8 cm -1 scattering coefficient of a thickness of 80 mm by a temporal gate of 60 ps was as much as 50 dB and the Lambert-Beer law dynamic rang reached to 140 dB. (author)

Instrumentation for Gate Current Noise Measurements on sub-100 nm MOS Transistors

CERN Document Server

Gaioni, L; Ratti, L; Re, V; Speziali, V; Traversi, G

2008-01-01

This work describes a measuring system that was developed to characterize the gate current noise performances of CMOS devices with minimum feature size in the 100 nm span. These devices play an essential role in the design of present daymixedsignal integrated circuits, because of the advantages associated with the scaling process. The reduction in the gate oxide thickness brought about by CMOS technology downscaling leads to a non-negligible gate current due to direct tunneling phenomena; this current represents a noise source which requires an accurate characterization for optimum analog design. In this paper, two instruments able to perform measurements in two different ranges of gate current values will be discussed. Some of the results of gate current noise characterization will also be presented.

A novel optical gating method for laser gated imaging

Science.gov (United States)

Ginat, Ran; Schneider, Ron; Zohar, Eyal; Nesher, Ofer

2013-06-01

For the past 15 years, Elbit Systems is developing time-resolved active laser-gated imaging (LGI) systems for various applications. Traditional LGI systems are based on high sensitive gated sensors, synchronized to pulsed laser sources. Elbit propriety multi-pulse per frame method, which is being implemented in LGI systems, improves significantly the imaging quality. A significant characteristic of the LGI is its ability to penetrate a disturbing media, such as rain, haze and some fog types. Current LGI systems are based on image intensifier (II) sensors, limiting the system in spectral response, image quality, reliability and cost. A novel propriety optical gating module was developed in Elbit, untying the dependency of LGI system on II. The optical gating module is not bounded to the radiance wavelength and positioned between the system optics and the sensor. This optical gating method supports the use of conventional solid state sensors. By selecting the appropriate solid state sensor, the new LGI systems can operate at any desired wavelength. In this paper we present the new gating method characteristics, performance and its advantages over the II gating method. The use of the gated imaging systems is described in a variety of applications, including results from latest field experiments.

A gate drive circuit for gate-turn-off (GTO) devices in series stack

International Nuclear Information System (INIS)

Despe, O.

1999-01-01

A gate-turn-off (GTO) switch is under development at the Advanced Photon Source as a replacement for a thyratron switch in high power pulsed application. The high voltage in the application requires multiple GTOs connected in series. One component that is critical to the success of GTO operation is the gate drive circuit. The gate drive circuit has to provide fast high-current pulses to the GTO gate for fast turn-on and turn-off. It also has to be able to operate while floating at high voltage. This paper describes a gate drive circuit that meets these requirements

Audiovisual biofeedback improves image quality and reduces scan time for respiratory-gated 3D MRI

International Nuclear Information System (INIS)

Lee, D; Keall, P; Kim, T; Greer, P B; Arm, J

2014-01-01

The purpose of this study was to test the hypothesis that audiovisual (AV) biofeedback can improve image quality and reduce scan time for respiratory-gated 3D thoracic MRI. For five healthy human subjects respiratory motion guidance in MR scans was provided using an AV biofeedback system, utilizing real-time respiratory motion signals. To investigate the improvement of respiratory-gated 3D MR images between free breathing (FB) and AV biofeedback (AV), each subject underwent two imaging sessions. Respiratory-related motion artifacts and imaging time were qualitatively evaluated in addition to the reproducibility of external (abdominal) motion. In the results, 3D MR images in AV biofeedback showed more anatomic information such as a clear distinction of diaphragm, lung lobes and sharper organ boundaries. The scan time was reduced from 401±215 s in FB to 334±94 s in AV (p-value 0.36). The root mean square variation of the displacement and period of the abdominal motion was reduced from 0.4±0.22 cm and 2.8±2.5 s in FB to 0.1±0.15 cm and 0.9±1.3 s in AV (p-value of displacement <0.01 and p-value of period 0.12). This study demonstrated that audiovisual biofeedback improves image quality and reduces scan time for respiratory-gated 3D MRI. These results suggest that AV biofeedback has the potential to be a useful motion management tool in medical imaging and radiation therapy procedures.

Trapped-ion quantum logic gates based on oscillating magnetic fields

Science.gov (United States)

Ospelkaus, Christian; Langer, Christopher E.; Amini, Jason M.; Brown, Kenton R.; Leibfried, Dietrich; Wineland, David J.

2009-05-01

Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing. With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ions and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering decoherence, a fundamental source of decoherence in laser-mediated gates. A potentially beneficial environment for the implementation of such schemes is a cryogenic ion trap, because small length scale traps with low motional heating rates can be realized. A cryogenic ion trap experiment is currently under construction at NIST.

Introduction of audio gating to further reduce organ motion in breathing synchronized radiotherapy

International Nuclear Information System (INIS)

Kubo, H. Dale; Wang Lili

2002-01-01

With breathing synchronized radiotherapy (BSRT), a voltage signal derived from an organ displacement detector is usually displayed on the vertical axis whereas the elapsed time is shown on the horizontal axis. The voltage gate window is set on the breathing voltage signal. Whenever the breathing signal falls between the two gate levels, a gate pulse is produced to enable the treatment machine. In this paper a new gating mechanism, audio (or time-sequence) gating, is introduced and is integrated into the existing voltage gating system. The audio gating takes advantage of the repetitive nature of the breathing signal when repetitive audio instruction is given to the patient. The audio gating is aimed at removing the regions of sharp rises and falls in the breathing signal that cannot be removed by the voltage gating. When the breathing signal falls between voltage gate levels as well as between audio-gate levels, the voltage- and audio-gated radiotherapy (ART) system will generate an AND gate pulse. When this gate pulse is received by a linear accelerator, the linear accelerator becomes 'enabled' for beam delivery and will deliver the beam when all other interlocks are removed. This paper describes a new gating mechanism and a method of recording beam-on signal, both of which are, configured into a laptop computer. The paper also presents evidence of some clinical advantages achieved with the ART system

ISAC's Gating-ML 2.0 data exchange standard for gating description.

Science.gov (United States)

Spidlen, Josef; Moore, Wayne; Brinkman, Ryan R

2015-07-01

The lack of software interoperability with respect to gating has traditionally been a bottleneck preventing the use of multiple analytical tools and reproducibility of flow cytometry data analysis by independent parties. To address this issue, ISAC developed Gating-ML, a computer file format to encode and interchange gates. Gating-ML 1.5 was adopted and published as an ISAC Candidate Recommendation in 2008. Feedback during the probationary period from implementors, including major commercial software companies, instrument vendors, and the wider community, has led to a streamlined Gating-ML 2.0. Gating-ML has been significantly simplified and therefore easier to support by software tools. To aid developers, free, open source reference implementations, compliance tests, and detailed examples are provided to stimulate further commercial adoption. ISAC has approved Gating-ML as a standard ready for deployment in the public domain and encourages its support within the community as it is at a mature stage of development having undergone extensive review and testing, under both theoretical and practical conditions. © 2015 International Society for Advancement of Cytometry.

Gate engineered heterostructure junctionless TFET with Gaussian doping profile for ambipolar suppression and electrical performance improvement

Science.gov (United States)

Aghandeh, Hadi; Sedigh Ziabari, Seyed Ali

2017-11-01

This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the heterostructure interface improves device behavior by reducing the tunneling barrier width at the channel/source interface. Simultaneously, the dual material gate structure decreases ambipolar current by increasing the tunneling barrier width at the drain/channel interface. The performance of the device is analyzed based on the energy band diagram at on, off, and ambipolar states. Numerical simulations demonstrate improvements in ION, IOFF, ION/IOFF, subthreshold slope (SS), transconductance and cut-off frequency and suppressed ambipolar behavior. Next, the workfunction optimization of dual material gate is studied. It is found that if appropriate workfunctions are selected for tunnel and auxiliary gates, the JLTFET exhibits considerably improved performance. We then study the influence of Gaussian doping distribution at the drain and the channel on the ambipolar performance of the device and find that a Gaussian doping profile and a dual material gate structure remarkably reduce ambipolar current. Gaussian doped DMG-H-JLTFET, also exhibits enhanced IOFF, ION/IOFF, SS and a low threshold voltage without degrading IOFF.

An evaluation of gating window size, delivery method, and composite field dosimetry of respiratory-gated IMRT

International Nuclear Information System (INIS)

Hugo, Geoffrey D.; Agazaryan, Nzhde; Solberg, Timothy D.

2002-01-01

A respiratory gating system has been developed based on a commercial patient positioning system. The purpose of this study is to investigate the ability of the gating system to reproduce normal, nongated IMRT operation and to quantify the errors produced by delivering a nongated IMRT treatment onto a moving target. A moving phantom capable of simultaneous two-dimensional motion was built, and an analytical liver motion function was used to drive the phantom. Studies were performed to assess the effect of gating window size and choice of delivery method (segmented and dynamic multileaf collimation). Additionally, two multiple field IMRT cases were delivered to quantify the error in gated and nongated IMRT with motion. Dosimetric error between nonmoving and moving deliveries is related to gating window size. By reducing the window size, the error can be reduced. Delivery error can be reduced for both dynamic and segmented delivery with gating. For the implementation of dynamic IMRT delivery in this study, dynamic delivery was found to generate larger delivery errors than segmented delivery in most cases studied. For multiple field IMRT delivery, the largest errors were generated in regions where high field modulation was present parallel to the axis of motion. Gating was found to reduce these large errors to clinically acceptable levels

Multi-channel normal speed gated integrator in the measurement of the laser scattering light energy

International Nuclear Information System (INIS)

Yang Dong; Yu Xiaoqi; Hu Yuanfeng

2005-01-01

With the method of integration in a limited time, a Multi-channel normal speed gated integrator based on VXI system has been developed for measuring the signals with changeable pulse width in laser scattering light experiment. It has been tested with signal sources in ICF experiment. In tests, the integral nonlinearity between the integral results of the gated integrator and that of an oscilloscope is less than 1%. In the ICF experiments the maximum error between the integral results of the gated integrator and that of oscilloscope is less than 3% of the full scale range of the gated integrator. (authors)

SYNTHESIS AND REDUCED LOGIC GATE REALIZATION OF MULTI-VALUED LOGIC FUNCTIONS USING NEURAL NETWORK DEPLOYMENT ALGORITHM

Directory of Open Access Journals (Sweden)

A. K. CHOWDHURY

2016-02-01

Full Text Available In this paper an evolutionary technique for synthesizing Multi-Valued Logic (MVL functions using Neural Network Deployment Algorithm (NNDA is presented. The algorithm is combined with back-propagation learning capability and neural MVL operators. This research article is done to observe the anomalistic characteristics of MVL neural operators and their role in synthesis. The advantages of NNDA-MVL algorithm is demonstrated with realization of synthesized many valued functions with lesser MVL operators. The characteristic feature set consists of MVL gate count, network link count, network propagation delay and accuracy achieved in training. In brief, this paper depicts an effort of reduced network size for synthesized MVL functions. Trained MVL operators improve the basic architecture by reducing MIN gate and interlink connection by 52.94% and 23.38% respectively.

High-current and low acceleration voltage arsenic ion implanted polysilicon-gate and source-drain electrode Si mos transistor

International Nuclear Information System (INIS)

Saito, Yasuyuki; Sugimura, Yoshiro; Sugihara, Michiyuki

1993-01-01

The fabrication process of high current arsenic (As) ion implanted polysilicon (Si) gate and source drain (SD) electrode Si n-channel metal oxide-semiconductor field effect transistor (MOSFET) was examined. Poly Si film n-type doping was performed by using high current (typical current: 2mA) and relatively low acceleration voltage (40keV) As ion implantation technique (Lintott series 3). It was observed that high dose As implanted poly Si films as is show refractoriness against radical fluorine excited by microwave. Using GCA MANN4800 (m/c ID No.2, resist: OFPR) mask pattern printing technique, the high current As ion implantation technique and radical fluorine gas phase etching (Chemical dry etching: CDE) technique, the n-channel Poly Si gate (ρs = ≅100Ω/□) enhancement MQSFETs(ρs source drain = ≅50Ω/□, SiO 2 gate=380 angstrom) with off-leak-less were obtained on 3 inch Czochralski grown 2Ωcm boron doped p type wafers (Osaka titanium). By the same process, a 8 bit single chip μ-processor with 26MHz full operation was performed

Feasibility of epicardial adipose tissue quantification in non-ECG-gated low-radiation-dose CT: comparison with prospectively ECG-gated cardiac CT

Energy Technology Data Exchange (ETDEWEB)

Simon-Yarza, Isabel; Viteri-Ramirez, Guillermo; Saiz-Mendiguren, Ramon; Slon-Roblero, Pedro J.; Paramo, Maria [Dept. of Radiology, Clinica Univ. de Navarra, Pamplona (Spain); Bastarrika, Gorka [Dept. of Radiology, Clinica Univ. de Navarra, Pamplona (Spain); Cardiac Imaging Unit, Clinica Univ. de Navarra, Pamplona (Spain)], e-mail: bastarrika@unav.es

2012-06-15

Background: Epicardial adipose tissue (EAT) is an important indicator of cardiovascular risk. This parameter is generally assessed on ECG-gated computed tomography (CT) images. Purpose: To evaluate feasibility and reliability of EAT quantification on non-gated thoracic low-radiation-dose CT examinations with respect to prospectively ECG-gated cardiac CT acquisition. Material and Methods: Sixty consecutive asymptomatic smokers (47 men; mean age 64 {+-} 9.8 years) underwent low-dose CT of the chest and prospectively ECG-gated cardiac CT acquisitions (64-slice dual-source CT). The two examinations were reconstructed with the same range, field of view, slice thickness, and convolution algorithm. Two independent observers blindly quantified EAT volume using commercially available software. Data were compared with paired sample Student t-test, concordance correlation coefficients (CCC), and Bland-Altman plots. Results: No statistically significant difference was observed for EAT volume quantification with low-dose-CT (141.7 {+-} 58.3 mL) with respect to ECG-gated CT (142.7 {+-} 57.9 mL). Estimation of CCC showed almost perfect concordance between the two techniques for EAT-volume assessment (CCC, 0.99; mean difference, 0.98 {+-} 5.1 mL). Inter-observer agreement for EAT volume estimation was CCC: 0.96 for low-dose-CT examinations and 0.95 for ECG-gated CT. Conclusion: Non-gated low-dose CT allows quantifying EAT with almost the same concordance and reliability as using dedicated prospectively ECG-gated cardiac CT acquisition protocols.

Feasibility of epicardial adipose tissue quantification in non-ECG-gated low-radiation-dose CT: comparison with prospectively ECG-gated cardiac CT

International Nuclear Information System (INIS)

Simon-Yarza, Isabel; Viteri-Ramirez, Guillermo; Saiz-Mendiguren, Ramon; Slon-Roblero, Pedro J.; Paramo, Maria; Bastarrika, Gorka

2012-01-01

Background: Epicardial adipose tissue (EAT) is an important indicator of cardiovascular risk. This parameter is generally assessed on ECG-gated computed tomography (CT) images. Purpose: To evaluate feasibility and reliability of EAT quantification on non-gated thoracic low-radiation-dose CT examinations with respect to prospectively ECG-gated cardiac CT acquisition. Material and Methods: Sixty consecutive asymptomatic smokers (47 men; mean age 64 ± 9.8 years) underwent low-dose CT of the chest and prospectively ECG-gated cardiac CT acquisitions (64-slice dual-source CT). The two examinations were reconstructed with the same range, field of view, slice thickness, and convolution algorithm. Two independent observers blindly quantified EAT volume using commercially available software. Data were compared with paired sample Student t-test, concordance correlation coefficients (CCC), and Bland-Altman plots. Results: No statistically significant difference was observed for EAT volume quantification with low-dose-CT (141.7 ± 58.3 mL) with respect to ECG-gated CT (142.7 ± 57.9 mL). Estimation of CCC showed almost perfect concordance between the two techniques for EAT-volume assessment (CCC, 0.99; mean difference, 0.98 ± 5.1 mL). Inter-observer agreement for EAT volume estimation was CCC: 0.96 for low-dose-CT examinations and 0.95 for ECG-gated CT. Conclusion: Non-gated low-dose CT allows quantifying EAT with almost the same concordance and reliability as using dedicated prospectively ECG-gated cardiac CT acquisition protocols

Gate Driver Circuit of Power Electronic Switches with Reduced Number of Isolated DC/DC Converter for a Switched Reluctance Motor

International Nuclear Information System (INIS)

Memon, A.A.

2013-01-01

This paper presents a gate driver circuit for the switching devices used in the asymmetrical converter for a switched reluctance machine with reduced number of isolated dc/dc converters. Isolation required in the gate driver circuit of switching devices is indispensable. For the purpose of isolation different arrangements may be used such as pulse transformers. The dc/dc converter for isolation and powering the gate drive circuits is suitable, cheaper in cost and simple to implement. It is also significant that required number of isolation converters is much less than the switches used in converter. In addition, a simple logic circuit has been presented for producing the gate signals at correct phase sequence which is compared with the gated signals directly obtained from the encoder of an existing machine. (author)

High performance tunnel field-effect transistor by gate and source engineering.

Science.gov (United States)

Huang, Ru; Huang, Qianqian; Chen, Shaowen; Wu, Chunlei; Wang, Jiaxin; An, Xia; Wang, Yangyuan

2014-12-19

As one of the most promising candidates for future nanoelectronic devices, tunnel field-effect transistors (TFET) can overcome the subthreshold slope (SS) limitation of MOSFET, whereas high ON-current, low OFF-current and steep switching can hardly be obtained at the same time for experimental TFETs. In this paper, we developed a new nanodevice technology based on TFET concepts. By designing the gate configuration and introducing the optimized Schottky junction, a multi-finger-gate TFET with a dopant-segregated Schottky source (mFSB-TFET) is proposed and experimentally demonstrated. A steeper SS can be achieved in the fabricated mFSB-TFET on the bulk Si substrate benefiting from the coupled quantum band-to-band tunneling (BTBT) mechanism, as well as a high I(ON)/I(OFF) ratio (∼ 10(7)) at V(DS) = 0.2 V without an area penalty. By compatible SOI CMOS technology, the fabricated Si mFSB-TFET device was further optimized with a high ION/IOFF ratio of ∼ 10(8) and a steeper SS of over 5.5 decades of current. A minimum SS of below 60 mV dec(-1) was experimentally obtained, indicating its dominant quantum BTBT mechanism for switching.

Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

Energy Technology Data Exchange (ETDEWEB)

Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2015-07-28

Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

Implementation of angular response function modeling in SPECT simulations with GATE

International Nuclear Information System (INIS)

Descourt, P; Visvikis, D; Carlier, T; Bardies, M; Du, Y; Song, X; Frey, E C; Tsui, B M W; Buvat, I

2010-01-01

Among Monte Carlo simulation codes in medical imaging, the GATE simulation platform is widely used today given its flexibility and accuracy, despite long run times, which in SPECT simulations are mostly spent in tracking photons through the collimators. In this work, a tabulated model of the collimator/detector response was implemented within the GATE framework to significantly reduce the simulation times in SPECT. This implementation uses the angular response function (ARF) model. The performance of the implemented ARF approach has been compared to standard SPECT GATE simulations in terms of the ARF tables' accuracy, overall SPECT system performance and run times. Considering the simulation of the Siemens Symbia T SPECT system using high-energy collimators, differences of less than 1% were measured between the ARF-based and the standard GATE-based simulations, while considering the same noise level in the projections, acceleration factors of up to 180 were obtained when simulating a planar 364 keV source seen with the same SPECT system. The ARF-based and the standard GATE simulation results also agreed very well when considering a four-head SPECT simulation of a realistic Jaszczak phantom filled with iodine-131, with a resulting acceleration factor of 100. In conclusion, the implementation of an ARF-based model of collimator/detector response for SPECT simulations within GATE significantly reduces the simulation run times without compromising accuracy. (note)

Implementation of angular response function modeling in SPECT simulations with GATE

Energy Technology Data Exchange (ETDEWEB)

Descourt, P; Visvikis, D [INSERM, U650, LaTIM, IFR SclnBioS, Universite de Brest, CHU Brest, Brest, F-29200 (France); Carlier, T; Bardies, M [CRCNA INSERM U892, Nantes (France); Du, Y; Song, X; Frey, E C; Tsui, B M W [Department of Radiology, J Hopkins University, Baltimore, MD (United States); Buvat, I, E-mail: dimitris@univ-brest.f [IMNC-UMR 8165 CNRS Universites Paris 7 et Paris 11, Orsay (France)

2010-05-07

Among Monte Carlo simulation codes in medical imaging, the GATE simulation platform is widely used today given its flexibility and accuracy, despite long run times, which in SPECT simulations are mostly spent in tracking photons through the collimators. In this work, a tabulated model of the collimator/detector response was implemented within the GATE framework to significantly reduce the simulation times in SPECT. This implementation uses the angular response function (ARF) model. The performance of the implemented ARF approach has been compared to standard SPECT GATE simulations in terms of the ARF tables' accuracy, overall SPECT system performance and run times. Considering the simulation of the Siemens Symbia T SPECT system using high-energy collimators, differences of less than 1% were measured between the ARF-based and the standard GATE-based simulations, while considering the same noise level in the projections, acceleration factors of up to 180 were obtained when simulating a planar 364 keV source seen with the same SPECT system. The ARF-based and the standard GATE simulation results also agreed very well when considering a four-head SPECT simulation of a realistic Jaszczak phantom filled with iodine-131, with a resulting acceleration factor of 100. In conclusion, the implementation of an ARF-based model of collimator/detector response for SPECT simulations within GATE significantly reduces the simulation run times without compromising accuracy. (note)

Utility of Electrocardiography (ECG)-Gated Computed Tomography (CT) for Preoperative Evaluations of Thymic Epithelial Tumors.

Science.gov (United States)

Ozawa, Yoshiyuki; Hara, Masaki; Nakagawa, Motoo; Shibamoto, Yuta

2016-01-01

Preoperative evaluation of invasion to the adjacent organs is important for the thymic epithelial tumors on CT. The purpose of our study was to evaluate the utility of electrocardiography (ECG)-gated CT for assessing thymic epithelial tumors with regard to the motion artifacts produced and the preoperative diagnostic accuracy of the technique. Forty thymic epithelial tumors (36 thymomas and 4 thymic carcinomas) were examined with ECG-gated contrast-enhanced CT using a dual source scanner. The scan delay after the contrast media injection was 30 s for the non-ECG-gated CT and 100 s for the ECG-gated CT. Two radiologists blindly evaluated both the non-ECG-gated and ECG-gated CT images for motion artifacts and determined whether the tumors had invaded adjacent structures (mediastinal fat, superior vena cava, brachiocephalic veins, aorta, pulmonary artery, pericardium, or lungs) on each image. Motion artifacts were evaluated using a 3-grade scale. Surgical and pathological findings were used as a reference standard for tumor invasion. Motion artifacts were significantly reduced for all structures by ECG gating ( p =0.0089 for the lungs and p ECG-gated CT and ECG-gated CT demonstrated 79% and 95% accuracy, respectively, during assessments of pericardial invasion ( p =0.03). ECG-gated CT reduced the severity of motion artifacts and might be useful for preoperative assessment whether thymic epithelial tumors have invaded adjacent structures.

Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

Directory of Open Access Journals (Sweden)

Yan Liu

2017-08-01

Full Text Available Using a suitable dual-gate structure, the source-to-drain resistance (RSD of AlGaN/AlN/GaN heterostructure field-effect transistor (HFET with varying gate position has been studied at room temperature. The theoretical and experimental results have revealed a dependence of RSD on the gate position. The variation of RSD with the gate position is found to stem from the polarization Coulomb field (PCF scattering. This finding is of great benefit to the optimization of the performance of AlGaN/AlN/GaN HFET. Especially, when the AlGaN/AlN/GaN HFET works as a microwave device, it is beneficial to achieve the impedance matching by designing the appropriate gate position based on PCF scattering.

Geologic sources and concentrations of selenium in the West-Central Denver Basin, including the Toll Gate Creek watershed, Aurora, Colorado, 2003-2007

Science.gov (United States)

Paschke, Suzanne S.; Walton-Day, Katherine; Beck, Jennifer A.; Webbers, Ank; Dupree, Jean A.

2014-01-01

concentrations were greatest in samples containing indications of reducing conditions and organic matter (dark gray to black claystones and lignite horizons). The Toll Gate Creek watershed is situated in a unique hydrogeologic setting in the west-central part of the Denver Basin such that weathering of Cretaceous- to Tertiary-aged, non-marine, selenium-bearing rocks releases selenium to groundwater and surface water under present-day semi-arid environmental conditions. The Denver Formation contains several known and suspected geologic sources of selenium including: (1) lignite deposits; (2) tonstein partings; (3) organic-rich bentonite claystones; (4) salts formed as secondary weathering products; and possibly (5) the Cretaceous-Tertiary boundary. Organically complexed selenium and/or selenium-bearing pyrite in the enclosing claystones are likely the primary mineral sources of selenium in the Denver Formation, and correlations between concentration of dissolved selenium and dissolved organic carbon in groundwater indicate weathering and dissolution of organically complexed selenium from organic-rich claystone is a primary process mobilizing selenium. Secondary salts accumulated along fractures and bedding planes in the weathered zone are another potential geologic source of selenium, although their composition was not specifically addressed by the solids analyses. Results from this and previous work indicate that shallow groundwater and streams similarly positioned over Denver Formation claystone units at other locations in the Denver Basin also may contain concentrations of dissolved selenium greater than the Colorado aquatic-life standard or the drinking- water standard.

An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET

Science.gov (United States)

Saramekala, G. K.; Santra, Abirmoya; Dubey, Sarvesh; Jit, Satyabrata; Tiwari, Pramod Kumar

2013-08-01

In this paper, an analytical short-channel threshold voltage model is presented for a dual-metal-gate (DMG) fully depleted recessed source/drain (Re-S/D) SOI MOSFET. For the first time, the advantages of recessed source/drain (Re-S/D) and of dual-metal-gate structure are incorporated simultaneously in a fully depleted SOI MOSFET. The analytical surface potential model at Si-channel/SiO2 interface and Si-channel/buried-oxide (BOX) interface have been developed by solving the 2-D Poisson’s equation in the channel region with appropriate boundary conditions assuming parabolic potential profile in the transverse direction of the channel. Thereupon, a threshold voltage model is derived from the minimum surface potential in the channel. The developed model is analyzed extensively for a variety of device parameters like the oxide and silicon channel thicknesses, thickness of source/drain extension in the BOX, control and screen gate length ratio. The validity of the present 2D analytical model is verified with ATLAS™, a 2D device simulator from SILVACO Inc.

A local bottom-gate structure with low parasitic capacitance for dielectrophoresis assembly and electrical characterization of suspended nanomaterials

International Nuclear Information System (INIS)

Wang, Tun; Liu, Bin; Jiang, Shusen; Rong, Hao; Lu, Miao

2014-01-01

A device including a pair of top electrodes and a local gate in the bottom of an SU-8 trench was fabricated on a glass substrate for dielectrophoresis assembly and electrical characterization of suspended nanomaterials. The three terminals were made of gold electrodes and electrically isolated from each other by an air gap. Compared to the widely used global back-gate silicon device, the parasitic capacitance between the three terminals was significantly reduced and an individual gate was assigned to each device. In addition, the spacing from the bottom-gate to either the source or drain was larger than twice the source-drain gap, which guaranteed that the electric field between the source and drain in the dielectrophoresis assembly was not distinguished by the bottom-gate. To prove the feasibility and versatility of the device, a suspended carbon nanotube and graphene film were assembled by dielectrophoresis and characterized successfully. Accordingly, the proposed device holds promise for the electrical characterization of suspended nanomaterials, especially in a high frequency resonator or transistor configuration. (paper)

Hybrid Electric Power Train and Control Strategies Automotive Technology Education (GATE) Program

Energy Technology Data Exchange (ETDEWEB)

Andrew Frank

2006-05-31

Plug-in hybrid electric vehicles (PHEV) offer societal benefits through their ability to displace the use of petroleum fuels. Petroleum fuels represent a polluting and politically destabilizing energy carrier. PHEV technologies can move transportation away from petroleum fuel sources by enabling domestically generated electricity and liquids bio-fuels to serve as a carrier for transportation energy. Additionally, the All-Electric-Range (AER) offered by PHEVs can significantly reduce demand for expensive and polluting liquid fuels. The GATE funding received during the 1998 through 2004 funding cycle by the UC Davis Hybrid Electric Vehicle Center (HEVC) was used to advance and train researchers in PHEV technologies. GATE funding was used to construct a rigorous PHEV curriculum, provide financial support for HEVC researchers, and provide material support for research efforts. A rigorous curriculum was developed through the UC Davis Mechanical and Aeronautical Engineering Department to train HEVC researchers. Students' research benefited from this course work by advancing the graduate student researchers' understanding of key PHEV design considerations. GATE support assisted HEVC researchers in authoring technical articles and producing patents. By supporting HEVC researchers multiple Master's theses were written as well as journal articles and publications. The topics from these publications include Continuously Variable Transmission control strategies and PHEV cross platform controls software development. The GATE funding has been well used to advance PHEV systems. The UC Davis Hybrid Electric Vehicle Center is greatly appreciative for the opportunities GATE funding provided. The goals and objectives for the HEVC GATE funding were to nourish engineering research in PHEV technologies. The funding supplied equipment needed to allow researchers to investigate PHEV design sensitivities and to further optimize system components. Over a dozen PHEV

High performance tunnel field-effect transistor by gate and source engineering

International Nuclear Information System (INIS)

Huang, Ru; Huang, Qianqian; Chen, Shaowen; Wu, Chunlei; Wang, Jiaxin; An, Xia; Wang, Yangyuan

2014-01-01

As one of the most promising candidates for future nanoelectronic devices, tunnel field-effect transistors (TFET) can overcome the subthreshold slope (SS) limitation of MOSFET, whereas high ON-current, low OFF-current and steep switching can hardly be obtained at the same time for experimental TFETs. In this paper, we developed a new nanodevice technology based on TFET concepts. By designing the gate configuration and introducing the optimized Schottky junction, a multi-finger-gate TFET with a dopant-segregated Schottky source (mFSB-TFET) is proposed and experimentally demonstrated. A steeper SS can be achieved in the fabricated mFSB-TFET on the bulk Si substrate benefiting from the coupled quantum band-to-band tunneling (BTBT) mechanism, as well as a high I ON /I OFF ratio (∼10 7 ) at V DS  = 0.2 V without an area penalty. By compatible SOI CMOS technology, the fabricated Si mFSB-TFET device was further optimized with a high I ON /I OFF ratio of ∼10 8 and a steeper SS of over 5.5 decades of current. A minimum SS of below 60 mV dec −1 was experimentally obtained, indicating its dominant quantum BTBT mechanism for switching. (paper)

Methodology for Analysis, Modeling and Simulation of Airport Gate-waiting Delays

Science.gov (United States)

Wang, Jianfeng

This dissertation presents methodologies to estimate gate-waiting delays from historical data, to identify gate-waiting-delay functional causes in major U.S. airports, and to evaluate the impact of gate operation disruptions and mitigation strategies on gate-waiting delay. Airport gates are a resource of congestion in the air transportation system. When an arriving flight cannot pull into its gate, the delay it experiences is called gate-waiting delay. Some possible reasons for gate-waiting delay are: the gate is occupied, gate staff or equipment is unavailable, the weather prevents the use of the gate (e.g. lightning), or the airline has a preferred gate assignment. Gate-waiting delays potentially stay with the aircraft throughout the day (unless they are absorbed), adding costs to passengers and the airlines. As the volume of flights increases, ensuring that airport gates do not become a choke point of the system is critical. The first part of the dissertation presents a methodology for estimating gate-waiting delays based on historical, publicly available sources. Analysis of gate-waiting delays at major U.S. airports in the summer of 2007 identifies the following. (i) Gate-waiting delay is not a significant problem on majority of days; however, the worst delay days (e.g. 4% of the days at LGA) are extreme outliers. (ii) The Atlanta International Airport (ATL), the John F. Kennedy International Airport (JFK), the Dallas/Fort Worth International Airport (DFW) and the Philadelphia International Airport (PHL) experience the highest gate-waiting delays among major U.S. airports. (iii) There is a significant gate-waiting-delay difference between airlines due to a disproportional gate allocation. (iv) Gate-waiting delay is sensitive to time of a day and schedule peaks. According to basic principles of queueing theory, gate-waiting delay can be attributed to over-scheduling, higher-than-scheduled arrival rate, longer-than-scheduled gate-occupancy time, and reduced gate

Dosimetry in radiotherapy and brachytherapy by Monte-Carlo GATE simulation on computing grid; Dosimetrie en radiotherapie et curietherapie par simulation Monte-Carlo GATE sur grille informatique

Energy Technology Data Exchange (ETDEWEB)

Thiam, Ch O

2007-10-15

Accurate radiotherapy treatment requires the delivery of a precise dose to the tumour volume and a good knowledge of the dose deposit to the neighbouring zones. Computation of the treatments is usually carried out by a Treatment Planning System (T.P.S.) which needs to be precise and fast. The G.A.T.E. platform for Monte-Carlo simulation based on G.E.A.N.T.4 is an emerging tool for nuclear medicine application that provides functionalities for fast and reliable dosimetric calculations. In this thesis, we studied in parallel a validation of the G.A.T.E. platform for the modelling of electrons and photons low energy sources and the optimized use of grid infrastructures to reduce simulations computing time. G.A.T.E. was validated for the dose calculation of point kernels for mono-energetic electrons and compared with the results of other Monte-Carlo studies. A detailed study was made on the energy deposit during electrons transport in G.E.A.N.T.4. In order to validate G.A.T.E. for very low energy photons (<35 keV), three models of radioactive sources used in brachytherapy and containing iodine 125 (2301 of Best Medical International; Symmetra of Uro- Med/Bebig and 6711 of Amersham) were simulated. Our results were analyzed according to the recommendations of task group No43 of American Association of Physicists in Medicine (A.A.P.M.). They show a good agreement between G.A.T.E., the reference studies and A.A.P.M. recommended values. The use of Monte-Carlo simulations for a better definition of the dose deposited in the tumour volumes requires long computing time. In order to reduce it, we exploited E.G.E.E. grid infrastructure where simulations are distributed using innovative technologies taking into account the grid status. Time necessary for the computing of a radiotherapy planning simulation using electrons was reduced by a factor 30. A Web platform based on G.E.N.I.U.S. portal was developed to make easily available all the methods to submit and manage G.A.T.E

Structured-gate organic field-effect transistors

International Nuclear Information System (INIS)

Aljada, Muhsen; Pandey, Ajay K; Velusamy, Marappan; Burn, Paul L; Meredith, Paul; Namdas, Ebinazar B

2012-01-01

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO 2 ) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends. (paper)

Structured-gate organic field-effect transistors

Science.gov (United States)

Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

2012-06-01

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

An experimental study on the effects of different opening ranges of waste-gate on the exhaust soot emission of a turbo-charged DI diesel engine

International Nuclear Information System (INIS)

Ghazikhani, M.; Davarpanah, M.; Shaegh, S.A. Mousavi

2008-01-01

This experimental study was conducted to investigate the effects of different opening ranges of waste-gate of a turbo-charged DI diesel engine on improving the exhaust soot emission. Different opening ranges of waste-gate were supplied using an adjustable spring to load the actuating rod of the waste-gate in which, increasing the opening range of the waste-gate decreases the inlet manifold pressure. In this study, the maximum inlet manifold pressures which were supplied by changing the opening range of waste-gate were 0.1 bar, 0.23 bar, 0.26 bar and 0.52 bar over atmosphere and experiments were conducted under the ECE-R49, 13 mode standard test. At each mode of the test, soot emission was recorded and then brake specific soot emission was calculated. Results indicate that, soot emission decreases with increasing the maximum inlet manifold pressure from 0.1 bar to 0.23 bar. This reduction may be due to increasing the intake-air temperature which results in reduction of ignition delay that prolongs the late combustion phase. This improves the soot burnout process because enough time and sufficient in-cylinder temperature are available at the late combustion phase prior to exhaust valve opening. While for the higher maximum inlet manifold pressures from 0.23 bar to 0.52 bar, although there are enough time at the late combustion phase, but the soot emission increases which could be due to more reduction of the in-cylinder gas temperature at the end of combustion before EVO

Respiratory-Gated Positron Emission Tomography and Breath-Hold Computed Tomography Coupling to Reduce the Influence of Respiratory Motion: Methodology and Feasibility

International Nuclear Information System (INIS)

Daouk, J.; Fin, L.; Bailly, P.; Meyer, M.E.

2009-01-01

Background: Respiratory motion causes uptake in positron emission tomography (PET) images of chest and abdominal structures to be blurred and reduced in intensity. Purpose: To compare two respiratory-gated PET binning methods (based on frequency and amplitude analyses of the respiratory signal) and to propose a 'BH-based' method based on an additional breath-hold computed tomography (CT) acquisition. Material and Methods: Respiratory-gated PET consists in list-mode (LM) acquisition with simultaneous respiratory signal recording. A phantom study featured rectilinear movement of a 0.5-ml sphere filled with 18 F-fluorodeoxyglucose ( 18 F-FDG) solution, placed in a radioactive background (sphere-to-background contrast 6:1). Two patients were also examined. Three figures of merit were calculated: the target-to-background ratio profile (TBRP) in the axial direction through the uptake (i.e., the sphere or lesion), full-width-at-half-maximum (FWHM) values, and maximized standard uptake values (SUVmax). Results: In the phantom study, the peak TBRP was 0.9 for non-gated volume, 1.83 for BH-based volume, and varied between 1.13 and 1.73 for Freq-based volumes and between 1.34 and 1.66 for Amp-based volumes. A reference volume (REF-static) was also acquired for the phantom (in a static, 'expiratory' state), with a peak TBRP at 1.88. TBRPs were computed for patient data, with higher peak values for all gated volumes than for non-gated volumes. Conclusion: Respiratory-gated PET acquisition reduces the blurring effect and increases image contrast. However, Freq-based and Amp-based volumes are still influenced by inappropriate attenuation correction and misregistration of mobile lesions on CT images. The proposed BH-based method both reduces motion artifacts and improves PET-CT registration

Optical XOR gate

Science.gov (United States)

Vawter, G. Allen

2013-11-12

An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Assessment of Double Outlet Right Ventricle Associated with Multiple Malformations in Pediatric Patients Using Retrospective ECG-Gated Dual-Source Computed Tomography.

Directory of Open Access Journals (Sweden)

Ke Shi

Full Text Available To evaluate the feasibility and diagnostic accuracy of retrospective electrocardiographically (ECG-gated dual-source computed tomography (DSCT for the assessment of double outlet right ventricle (DORV and associated multiple malformations in pediatric patients.Forty-seven patients <10 years of age with DORV underwent retrospective ECG-gated DSCT. The location of the ventricular septal defect (VSD, alignment of the two great arteries, and associated malformations were assessed. The feasibility of retrospective ECG-gated DSCT in pediatric patients was assessed, the image quality of DSCT and the agreement of the diagnosis of associated malformations between DSCT and transthoracic echocardiography (TTE were evaluated, the diagnostic accuracies of DSCT and TTE were referred to surgical results, and the effective doses were calculated.Apart from DORV, 109 associated malformations were confirmed postoperatively. There was excellent agreement (κ = 0.90 for the diagnosis of associated malformations between DSCT and TTE. However, DSCT was superior to TTE in demonstrating paracardiac anomalies (sensitivity, coronary artery anomalies: 100% vs. 80.00%, anomalies of great vessels: 100% vs. 88.57%, separate thoracic and abdominal anomalies: 100% vs. 76.92%, respectively. Combined with TTE, DSCT can achieve excellent diagnostic performance in intracardiac anomalies (sensitivity, 91.30% vs. 100%. The mean image quality score was 3.70 ± 0.46 (κ = 0.76. The estimated mean effective dose was < 1 mSv (0.88 ± 0.34 mSv.Retrospective ECG-gated DSCT is a better diagnostic tool than TTE for pediatric patients with complex congenital heart disease such as DORV. Combined with TTE, it may reduce or even obviate the use of invasive cardiac catheterization, and thus expose the patients to a much lower radiation dose.

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

Energy Technology Data Exchange (ETDEWEB)

Clément, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincaré, 59652 Villeneuve d' Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

2013-12-23

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs).

Science.gov (United States)

Choi, Woo Young; Lee, Hyun Kook

2016-01-01

The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation is occurred for metal-oxide-semiconductor field-effect transistors (MOSFETs) when supply voltage is reduced because subthreshold swing (SS) of MOSFETs cannot be lower than 60 mV/dec. Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. By replacing source-side gate insulator with a high- k material, HG TFETs show higher on-current, suppressed ambipolar current and lower SS than conventional TFETs. Device design optimization through simulation was performed and fabrication based on simulation demonstrated that performance of HG TFETs were better than that of conventional TFETs. Especially, enlargement of gate insulator thickness while etching gate insulator at the source side was improved by introducing HF vapor etch process. In addition, the proposed HG TFETs showed higher performance than our previous results by changing structure of sidewall spacer by high- k etching process.

A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

Science.gov (United States)

Priya, Anjali; Mishra, Ram Awadh

2016-04-01

In this paper, analytical modeling of surface potential is proposed for new Triple Metal Gate (TMG) fully depleted Recessed-Source/Dain Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The metal with the highest work function is arranged near the source region and the lowest one near the drain. Since Recessed-Source/Drain SOI MOSFET has higher drain current as compared to conventional SOI MOSFET due to large source and drain region. The surface potential model developed by 2D Poisson's equation is verified by comparison to the simulation result of 2-dimensional ATLAS simulator. The model is compared with DMG and SMG devices and analysed for different device parameters. The ratio of metal gate length is varied to optimize the result.

Assessment of thoracic aortic elasticity: a preliminary study using electrocardiographically gated dual-source CT

International Nuclear Information System (INIS)

Li, Ning; Guo, Lijun; Sun, Haitao; Gao, Fei; Liu, Cheng; Beck, Thomas; Chen, Jiuhong; Biermann, Christina

2011-01-01

To gain a new insight into the elastic properties of the thoracic aorta in patients without aortic diseases using electrocardiographically (ECG)-gated dual-source (DS) CT. 56 subjects with no cardiovascular disease, selected from 2,700 people undergoing ECG-gated DSCT examination, were divided into three groups according to their age. CT data were reconstructed in 5% step throughout the RR interval. Diameter and area were measured at the curve of the ascending aorta (AA) and at the same level of the descending aorta (DA). The pulsation and elasticity of the aorta were evaluated. Aortic diameter changes were noted throughout the cardiac cycle. The maximum average diameter was seen at an RR interval of 24.02 ± 4.99% for the AA and 25.63 ± 4.77% for the DA. The minimum was at 93.5 ± 4.04% for the AA and 96.6 ± 4.58% for the DA. There was an age-dependent decrease in elasticity, while different correlation coefficients were found between various age groups and different elastic parameters. The properties of aortic pulsation and wall elasticity could be well shown by ECG-gated DSCT. The new findings regarding segment difference and age relevance were significant and should be taken into account in clinical trials and treatments for the elasticity related cardiovascular diseases. (orig.)

Gating of hippocampal activity, plasticity, and memory by entorhinal cortex long-range inhibition.

Science.gov (United States)

Basu, Jayeeta; Zaremba, Jeffrey D; Cheung, Stephanie K; Hitti, Frederick L; Zemelman, Boris V; Losonczy, Attila; Siegelbaum, Steven A

2016-01-08

The cortico-hippocampal circuit is critical for storage of associational memories. Most studies have focused on the role in memory storage of the excitatory projections from entorhinal cortex to hippocampus. However, entorhinal cortex also sends inhibitory projections, whose role in memory storage and cortico-hippocampal activity remains largely unexplored. We found that these long-range inhibitory projections enhance the specificity of contextual and object memory encoding. At the circuit level, these γ-aminobutyric acid (GABA)-releasing projections target hippocampal inhibitory neurons and thus act as a disinhibitory gate that transiently promotes the excitation of hippocampal CA1 pyramidal neurons by suppressing feedforward inhibition. This enhances the ability of CA1 pyramidal neurons to fire synaptically evoked dendritic spikes and to generate a temporally precise form of heterosynaptic plasticity. Long-range inhibition from entorhinal cortex may thus increase the precision of hippocampal-based long-term memory associations by assessing the salience of mnemonormation to the immediate sensory input. Copyright © 2016, American Association for the Advancement of Science.

Performance projections and design optimization of planar double gate SOI MOSFETs for logic technology applications

International Nuclear Information System (INIS)

Kranti, Abhinav; Hao Ying; Armstrong, G Alastair

2008-01-01

In this paper, by investigating the influence of source/drain extension region engineering (also known as gate–source/drain underlap) in nanoscale planar double gate (DG) SOI MOSFETs, we offer new insights into the design of future nanoscale gate-underlap DG devices to achieve ITRS projections for high performance (HP), low standby power (LSTP) and low operating power (LOP) logic technologies. The impact of high-κ gate dielectric, silicon film thickness, together with parameters associated with the lateral source/drain doping profile, is investigated in detail. The results show that spacer width along with lateral straggle can not only effectively control short-channel effects, thus presenting low off-current in a gate underlap device, but can also be optimized to achieve lower intrinsic delay and higher on–off current ratio (I on /I off ). Based on the investigation of on-current (I on ), off-current (I off ), I on /I off , intrinsic delay (τ), energy delay product and static power dissipation, we present design guidelines to select key device parameters to achieve ITRS projections. Using nominal gate lengths for different technologies, as recommended from ITRS specification, optimally designed gate-underlap DG MOSFETs with a spacer-to-straggle (s/σ) ratio of 2.3 for HP/LOP and 3.2 for LSTP logic technologies will meet ITRS projection. However, a relatively narrow range of lateral straggle lying between 7 to 8 nm is recommended. A sensitivity analysis of intrinsic delay, on-current and off-current to important parameters allows a comparative analysis of the various design options and shows that gate workfunction appears to be the most crucial parameter in the design of DG devices for all three technologies. The impact of back gate misalignment on I on , I off and τ is also investigated for optimized underlap devices

Note: The design of thin gap chamber simulation signal source based on field programmable gate array

International Nuclear Information System (INIS)

Hu, Kun; Wang, Xu; Li, Feng; Jin, Ge; Lu, Houbing; Liang, Futian

2015-01-01

The Thin Gap Chamber (TGC) is an important part of ATLAS detector and LHC accelerator. Targeting the feature of the output signal of TGC detector, we have designed a simulation signal source. The core of the design is based on field programmable gate array, randomly outputting 256-channel simulation signals. The signal is generated by true random number generator. The source of randomness originates from the timing jitter in ring oscillators. The experimental results show that the random number is uniform in histogram, and the whole system has high reliability

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

International Nuclear Information System (INIS)

Gasparyan, F.; Khondkaryan, H.; Arakelyan, A.; Zadorozhnyi, I.; Pud, S.; Vitusevich, S.

2016-01-01

The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p"+-p-p"+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2–4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculating the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 10"5. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage.

Four-gate transistor analog multiplier circuit

Science.gov (United States)

Mojarradi, Mohammad M. (Inventor); Blalock, Benjamin (Inventor); Cristoloveanu, Sorin (Inventor); Chen, Suheng (Inventor); Akarvardar, Kerem (Inventor)

2011-01-01

A differential output analog multiplier circuit utilizing four G.sup.4-FETs, each source connected to a current source. The four G.sup.4-FETs may be grouped into two pairs of two G.sup.4-FETs each, where one pair has its drains connected to a load, and the other par has its drains connected to another load. The differential output voltage is taken at the two loads. In one embodiment, for each G.sup.4-FET, the first and second junction gates are each connected together, where a first input voltage is applied to the front gates of each pair, and a second input voltage is applied to the first junction gates of each pair. Other embodiments are described and claimed.

Monte Carlo simulation of tomography techniques using the platform Gate

International Nuclear Information System (INIS)

Barbouchi, Asma

2007-01-01

Simulations play a key role in functional imaging, with applications ranging from scanner design, scatter correction, protocol optimisation. GATE (Geant4 for Application Tomography Emission) is a platform for Monte Carlo Simulation. It is based on Geant4 to generate and track particles, to model geometry and physics process. Explicit modelling of time includes detector motion, time of flight, tracer kinetics. Interfaces to voxellised models and image reconstruction packages improve the integration of GATE in the global modelling cycle. In this work Monte Carlo simulations are used to understand and optimise the gamma camera's performances. We study the effect of the distance between source and collimator, the diameter of the holes and the thick of the collimator on the spatial resolution, energy resolution and efficiency of the gamma camera. We also study the reduction of simulation's time and implement a model of left ventricle in GATE. (Author). 7 refs

Respiratory gating of cardiac PET data in list-mode acquisition

International Nuclear Information System (INIS)

Livieratos, Lefteris; Rajappan, Kim; Camici, Paolo G.; Stegger, Lars; Schafers, Klaus; Bailey, Dale L.

2006-01-01

Respiratory motion has been identified as a source of artefacts in most medical imaging modalities. This paper reports on respiratory gating as a means to eliminate motion-related inaccuracies in PET imaging. Respiratory gating was implemented in list mode with physiological signal recorded every millisecond together with the PET data. Respiration was monitored with an inductive respiration monitor using an elasticised belt around the patient's chest. Simultaneous ECG gating can be maintained independently by encoding ECG trigger signal into the list-mode data. Respiratory gating is performed in an off-line workstation with gating parameters defined retrospectively. The technique was applied on a preliminary set of patient data with C 15 O. Motion was visually observed in the cine displays of the sagittal and coronal views of the reconstructed respiratory gated images. Significant changes in the cranial-caudal position of the heart could be observed. The centroid of the cardiac blood pool showed an excursion of 4.5-16.5 mm (mean 8.5±4.8 mm) in the cranial-caudal direction, with more limited excursion of 1.1-7.0 mm (mean 2.5±2.2 mm) in the horizontal direction and 1.3-3.7 mm (mean 2.4±0.9 mm) in the vertical direction. These preliminary data show that the extent of motion involved in respiration is comparable to myocardial wall thickness, and respiratory gating may be considered in order to reduce this effect in the reconstructed images. (orig.)

Respiratory gating of cardiac PET data in list-mode acquisition.

Science.gov (United States)

Livieratos, Lefteris; Rajappan, Kim; Stegger, Lars; Schafers, Klaus; Bailey, Dale L; Camici, Paolo G

2006-05-01

Respiratory motion has been identified as a source of artefacts in most medical imaging modalities. This paper reports on respiratory gating as a means to eliminate motion-related inaccuracies in PET imaging. Respiratory gating was implemented in list mode with physiological signal recorded every millisecond together with the PET data. Respiration was monitored with an inductive respiration monitor using an elasticised belt around the patient's chest. Simultaneous ECG gating can be maintained independently by encoding ECG trigger signal into the list-mode data. Respiratory gating is performed in an off-line workstation with gating parameters defined retrospectively. The technique was applied on a preliminary set of patient data with C(15)O. Motion was visually observed in the cine displays of the sagittal and coronal views of the reconstructed respiratory gated images. Significant changes in the cranial-caudal position of the heart could be observed. The centroid of the cardiac blood pool showed an excursion of 4.5-16.5 mm (mean 8.5+/-4.8 mm) in the cranial-caudal direction, with more limited excursion of 1.1-7.0 mm (mean 2.5+/-2.2 mm) in the horizontal direction and 1.3-3.7 mm (mean 2.4+/-0.9 mm) in the vertical direction. These preliminary data show that the extent of motion involved in respiration is comparable to myocardial wall thickness, and respiratory gating may be considered in order to reduce this effect in the reconstructed images.

Prospective ECG triggering reduces prosthetic heart valve-induced artefacts compared with retrospective ECG gating on 256-slice CT

NARCIS (Netherlands)

Symersky, P.; Habets, J.; Westers, P.; Mol, de B.A.J.M.; Prokop, M.; Budde, R.P.J.

2012-01-01

Objectives Multidetector computed tomography (MDCT) has diagnostic value for the evaluation of prosthetic heart valve (PHV) dysfunction but it is hampered by artefacts. We hypothesised that image acquisition using prospective triggering instead of retrospective gating would reduce artefacts related

Dose modulated retrospective ECG-gated versus non-gated 64-row CT angiography of the aorta at the same radiation dose: Comparison of motion artifacts, diagnostic confidence and signal-to-noise-ratios

International Nuclear Information System (INIS)

Schernthaner, Ruediger E.; Stadler, Alfred; Beitzke, Dietrich; Homolka, Peter; Weber, Michael; Lammer, Johannes; Czerny, Martin; Loewe, Christian

2012-01-01

Purpose: To compare ECG-gated and non-gated CT angiography of the aorta at the same radiation dose, with regard to motion artifacts (MA), diagnostic confidence (DC) and signal-to-noise-ratios (SNRs). Materials and methods: Sixty consecutive patients prospectively randomized into two groups underwent 64-row CT angiography, with or without dose-modulated ECG-gating, of the entire aorta, due to several pathologies of the ascending aorta. MA and DC were both assessed using a four-point scale. SNRs were calculated by dividing the mean enhancement by the standard deviation. The dose-length-product (DLP) of each examination was recorded and the effective dose was estimated. Results: Dose-modulated ECG-gating showed statistically significant advantages over non-gated CT angiography, with regard to MA (p < 0.001) and DC (p < 0.001), at the aortic valve, at the origin of the coronary arteries, and at the dissection membrane, with a significant correlation (p < 0.001) between MA and DC. At the aortic wall, however, ECG-gated CT angiography showed statistically significant fewer MA (p < 0.001), but not a statistically significant higher DC (p = 0.137) compared to non-gated CT angiography. At the supra-aortic vessels and the descending aorta, the ECG-triggering showed no statistically significant differences with regard to MA (p = 0.861 and 0.526, respectively) and DC (p = 1.88 and 0.728, respectively). The effective dose of ECG-gated CT angiography (23.24 mSv; range, 18.43–25.94 mSv) did not differ significantly (p = 0.051) from that of non-gated CT angiography (24.28 mSv; range, 19.37–29.27 mSv). Conclusion: ECG-gated CT angiography of the entire aorta reduces MA and results in a higher DC with the same SNR, compared to non-gated CT angiography at the same radiation dose.

Audio-visual biofeedback for respiratory-gated radiotherapy: Impact of audio instruction and audio-visual biofeedback on respiratory-gated radiotherapy

International Nuclear Information System (INIS)

George, Rohini; Chung, Theodore D.; Vedam, Sastry S.; Ramakrishnan, Viswanathan; Mohan, Radhe; Weiss, Elisabeth; Keall, Paul J.

2006-01-01

Purpose: Respiratory gating is a commercially available technology for reducing the deleterious effects of motion during imaging and treatment. The efficacy of gating is dependent on the reproducibility within and between respiratory cycles during imaging and treatment. The aim of this study was to determine whether audio-visual biofeedback can improve respiratory reproducibility by decreasing residual motion and therefore increasing the accuracy of gated radiotherapy. Methods and Materials: A total of 331 respiratory traces were collected from 24 lung cancer patients. The protocol consisted of five breathing training sessions spaced about a week apart. Within each session the patients initially breathed without any instruction (free breathing), with audio instructions and with audio-visual biofeedback. Residual motion was quantified by the standard deviation of the respiratory signal within the gating window. Results: Audio-visual biofeedback significantly reduced residual motion compared with free breathing and audio instruction. Displacement-based gating has lower residual motion than phase-based gating. Little reduction in residual motion was found for duty cycles less than 30%; for duty cycles above 50% there was a sharp increase in residual motion. Conclusions: The efficiency and reproducibility of gating can be improved by: incorporating audio-visual biofeedback, using a 30-50% duty cycle, gating during exhalation, and using displacement-based gating

Low dose prospective ECG-gated delayed enhanced dual-source computed tomography in reperfused acute myocardial infarction comparison with cardiac magnetic resonance

International Nuclear Information System (INIS)

Wang Rui; Zhang Zhaoqi; Xu Lei; Ma Qin; He Yi; Lu Dongxu; Yu Wei; Fan Zhanming

2011-01-01

Purpose: To determine whether prospective electrocardiogram (ECG)-gated delayed contrast-enhanced dual-source computed tomography (DCE-DSCT) can accurately delineate the extension of myocardial infarction (MI) compared with delayed enhanced cardiac MR (DE-MR). Material and methods: Eleven patients were examined using dual-source CT and cardiac MR in 2 weeks after a first reperfused MI. DCE-DSCT scan protocol was performed with prospective ECG-gating sequential scan model 7 min after contrast administration. In a 17-model, infarcted myocardium detected by DE-MR was categorized as transmural and subendocardial extension. Segment of infarcted location and graded transmurality were compared between DCE-MDCT and DE-MR. Results: In all eleven patients, diagnostic quality was obtained for depicting delayed enhanced myocardium. Agreement between DCE-DSCT and MR was good on myocardial segment based comparison (kappa = 0.85, p < 0.001), and on transmural and subendocardial infarction type comparison (kappa = 0.82, p < 0.001, kappa = 0.52, p < 0.001, respectively). CT value was higher on infarcted region than that of normal region (100.02 ± 9.57 HU vs. 72.63 ± 7.32 HU, p < 0.001). Radiation dose of prospectively ECG-gating protocol were 0.99 ± 0.08 mSv (0.82-1.19 mSv). Conclusions: Prospective ECG-gated DCE-DSCT can accurately assess the extension and the patterns of myocardial infarction with low radiation dose.

Low dose prospective ECG-gated delayed enhanced dual-source computed tomography in reperfused acute myocardial infarction comparison with cardiac magnetic resonance

Energy Technology Data Exchange (ETDEWEB)

Wang Rui, E-mail: rui_wang1979@yahoo.cn [Department of Radiology, Beijing Anzhen Hospital, Capital Medical University, 100029 Beijing (China); Zhang Zhaoqi, E-mail: zhaoqi5000@vip.sohu.com [Department of Radiology, Beijing Anzhen Hospital, Capital Medical University, 100029 Beijing (China); Xu Lei, E-mail: leixu2001@hotmail.com [Department of Radiology, Beijing Anzhen Hospital, Capital Medical University, 100029 Beijing (China); Ma Qin, E-mail: tel1367@gmail.com [Department of Emergency, Beijing Anzhen Hospital, Capital Medical University, 100029 Beijing (China); He Yi, E-mail: heyi139@sina.com [Department of Radiology, Beijing Anzhen Hospital, Capital Medical University, 100029 Beijing (China); Lu Dongxu, E-mail: larry.hi@163.com [Department of Radiology, Beijing Anzhen Hospital, Capital Medical University, 100029 Beijing (China); Yu Wei, E-mail: yuwei02@gmail.com [Department of Radiology, Beijing Anzhen Hospital, Capital Medical University, 100029 Beijing (China); Fan Zhanming, E-mail: fanzm120@tom.com [Department of Radiology, Beijing Anzhen Hospital, Capital Medical University, 100029 Beijing (China)

2011-11-15

Purpose: To determine whether prospective electrocardiogram (ECG)-gated delayed contrast-enhanced dual-source computed tomography (DCE-DSCT) can accurately delineate the extension of myocardial infarction (MI) compared with delayed enhanced cardiac MR (DE-MR). Material and methods: Eleven patients were examined using dual-source CT and cardiac MR in 2 weeks after a first reperfused MI. DCE-DSCT scan protocol was performed with prospective ECG-gating sequential scan model 7 min after contrast administration. In a 17-model, infarcted myocardium detected by DE-MR was categorized as transmural and subendocardial extension. Segment of infarcted location and graded transmurality were compared between DCE-MDCT and DE-MR. Results: In all eleven patients, diagnostic quality was obtained for depicting delayed enhanced myocardium. Agreement between DCE-DSCT and MR was good on myocardial segment based comparison (kappa = 0.85, p < 0.001), and on transmural and subendocardial infarction type comparison (kappa = 0.82, p < 0.001, kappa = 0.52, p < 0.001, respectively). CT value was higher on infarcted region than that of normal region (100.02 {+-} 9.57 HU vs. 72.63 {+-} 7.32 HU, p < 0.001). Radiation dose of prospectively ECG-gating protocol were 0.99 {+-} 0.08 mSv (0.82-1.19 mSv). Conclusions: Prospective ECG-gated DCE-DSCT can accurately assess the extension and the patterns of myocardial infarction with low radiation dose.

Quality verification for respiratory gated proton therapy

International Nuclear Information System (INIS)

Kim, Eun Sook; Jang, Yo Jong; Park, Ji Yeon; Kang, Dong Yun; Yeom, Doo Seok

2013-01-01

To verify accuracy of respiratory gated proton therapy by measuring and analyzing proton beam delivered when respiratory gated proton therapy is being performed in our institute. The plan data of 3 patients who took respiratory gated proton therapy were used to deliver proton beam from proton therapy system. The manufactured moving phantom was used to apply respiratory gating system to reproduce proton beam which was partially irradiated. The key characteristics of proton beam, range, spreat-out Bragg peak (SOBP) and output factor were measured 5 times and the same categories were measured in the continuous proton beam which was not performed with respiratory gating system. Multi-layer ionization chamber was used to measure range and SOBP, and Scanditronix Wellhofer and farmer chamber was used to measure output factor. The average ranges of 3 patients (A, B, C), who had taken respiratory gated proton therapy or not, were (A) 7.226, 7.230, (B) 12.216, 12.220 and (C) 19.918, 19.920 g/cm 2 and average SOBP were (A) 4.950, 4.940, (B) 6.496, 6.512 and (C) 8.486, 8.490 g/cm 2 . And average output factor were (A) 0.985, 0.984 (B) 1.026, 1.027 and (C) 1.138, 1.136 cGy/MU. The differences of average range were -0.004, -0.004, -0.002 g/cm 2 , that of SOBP were 0.010, -0.016, -0.004 g/cm 2 and that of output factor were 0.001, -0.001, 0.002 cGy/MU. It is observed that the range, SOBP and output factor of proton beam delivered when respiratory gated proton therapy is being performed have the same beam quality with no significant difference compared to the proton beam which was continuously irradiated. Therefore, this study verified the quality of proton beam delivered when respiratory gated proton therapy and confirmed the accuracy of proton therapy using this

GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier

Science.gov (United States)

Han, Kefeng; Zhu, Lin

2017-09-01

In order to suppress the gate leakage current of a GaN high electron mobility transistor (GaN HEMT), a GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, in which a metal-oxide-semiconductor gate with high-dielectric-constant HfO2 as an insulating dielectric is employed to replace the traditional GaN HEMT Schottky gate. A 0.5 μm gate length GaN MOSHEMT was fabricated based on the proposed structure, the {{{Al}}}0.28{{{Ga}}}0.72{{N}} barrier layer is partially etched to produce a higher transconductance without deteriorating the transport characteristics of the two-dimensional electron gas in the channel, the gate dielectric is HfO2 deposited by atomic layer deposition. Current-voltage characteristics and radio frequency characteristics are obtained after device preparation, the maximum current density of the device is 900 mA mm-1, the source-drain breakdown voltage is 75 V, gate current is significantly suppressed and the forward gate voltage swing range is about ten times higher than traditional GaN HEMTs, the GaN MOSHEMT also demonstrates radio frequency characteristics comparable to traditional GaN HEMTs with the same gate length.

Evaluation of an exposed-radiation dose on a dual-source cardiac computed tomography examination with a prospective electrocardiogram-gated fast dual spiral scan

International Nuclear Information System (INIS)

Matsubara, Kosuke; Koshida, Kichiro; Koshida, Haruka; Sakuta, Keita; Hayashi, Hiroyuki; Takata, Tadanori; Horii, Junsei; Kawai, Keiichi; Yamamoto, Tomoyuki

2012-01-01

We evaluated exposed-radiation doses on dual-source cardiac computed tomography (CT) examinations with prospective electrocardiogram (ECG)-gated fast dual spiral scans. After placing dosimeters at locations corresponding to each of the thoracic organs, prospective ECG-gated fast dual spirals and retrospective ECG-gated dual spiral scans were performed to measure the absorbed dose of each organ. In the prospective ECG-gated fast dual spiral scans, the average absorbed doses were 5.03 mGy for the breast, 9.96 mGy for the heart, 6.60 mGy for the lung, 6.48 mGy for the bone marrow, 9.73 mGy for the thymus, and 4.58 mGy for the skin. These values were about 5% of the absorbed doses for the retrospective ECG-gated dual spiral scan. However, the absorbed dose differed greatly at each scan, especially in the external organs such as the breast. For effective and safe use of the prospective ECG-gated fast dual spiral scan, it is necessary to understand these characteristics sufficiently. (author)

Label Free Detection of Biomolecules Using Charge-Plasma-Based Gate Underlap Dielectric Modulated Junctionless TFET

Science.gov (United States)

Wadhwa, Girish; Raj, Balwinder

2018-05-01

Nanoscale devices are emerging as a platform for detecting biomolecules. Various issues were observed during the fabrication process such as random dopant fluctuation and thermal budget. To reduce these issues charge-plasma-based concept is introduced. This paper proposes the implementation of charge-plasma-based gate underlap dielectric modulated junctionless tunnel field effect transistor (DM-JLTFET) for the revelation of biomolecule immobilized in the open cavity gate channel region. In this p+ source and n+ drain regions are introduced by employing different work function over the intrinsic silicon. Also dual material gate architecture is implemented to reduce short channel effect without abandoning any other device characteristic. The sensitivity of biosensor is studied for both the neutral and charge-neutral biomolecules. The effect of device parameters such as channel thickness, cavity length and cavity thickness on drain current have been analyzed through simulations. This paper investigates the performance of charge-plasma-based gate underlap DM-JLTFET for biomolecule sensing applications while varying dielectric constant, charge density at different biasing conditions.

Dosimetry in radiotherapy and brachytherapy by Monte-Carlo GATE simulation on computing grid

International Nuclear Information System (INIS)

Thiam, Ch.O.

2007-10-01

Accurate radiotherapy treatment requires the delivery of a precise dose to the tumour volume and a good knowledge of the dose deposit to the neighbouring zones. Computation of the treatments is usually carried out by a Treatment Planning System (T.P.S.) which needs to be precise and fast. The G.A.T.E. platform for Monte-Carlo simulation based on G.E.A.N.T.4 is an emerging tool for nuclear medicine application that provides functionalities for fast and reliable dosimetric calculations. In this thesis, we studied in parallel a validation of the G.A.T.E. platform for the modelling of electrons and photons low energy sources and the optimized use of grid infrastructures to reduce simulations computing time. G.A.T.E. was validated for the dose calculation of point kernels for mono-energetic electrons and compared with the results of other Monte-Carlo studies. A detailed study was made on the energy deposit during electrons transport in G.E.A.N.T.4. In order to validate G.A.T.E. for very low energy photons (<35 keV), three models of radioactive sources used in brachytherapy and containing iodine 125 (2301 of Best Medical International; Symmetra of Uro- Med/Bebig and 6711 of Amersham) were simulated. Our results were analyzed according to the recommendations of task group No43 of American Association of Physicists in Medicine (A.A.P.M.). They show a good agreement between G.A.T.E., the reference studies and A.A.P.M. recommended values. The use of Monte-Carlo simulations for a better definition of the dose deposited in the tumour volumes requires long computing time. In order to reduce it, we exploited E.G.E.E. grid infrastructure where simulations are distributed using innovative technologies taking into account the grid status. Time necessary for the computing of a radiotherapy planning simulation using electrons was reduced by a factor 30. A Web platform based on G.E.N.I.U.S. portal was developed to make easily available all the methods to submit and manage G.A.T.E

Time-gated ballistic imaging using a large aperture switching beam.

Science.gov (United States)

Mathieu, Florian; Reddemann, Manuel A; Palmer, Johannes; Kneer, Reinhold

2014-03-24

Ballistic imaging commonly denotes the formation of line-of-sight shadowgraphs through turbid media by suppression of multiply scattered photons. The technique relies on a femtosecond laser acting as light source for the images and as switch for an optical Kerr gate that separates ballistic photons from multiply scattered ones. The achievable image resolution is one major limitation for the investigation of small objects. In this study, practical influences on the optical Kerr gate and image quality are discussed theoretically and experimentally applying a switching beam with large aperture (D = 19 mm). It is shown how switching pulse energy and synchronization of switching and imaging pulse in the Kerr cell influence the gate's transmission. Image quality of ballistic imaging and standard shadowgraphy is evaluated and compared, showing that the present ballistic imaging setup is advantageous for optical densities in the range of 8 ballistic imaging setup into a schlieren-type system with an optical schlieren edge.

Double-gated spectral snapshots for biomolecular fluorescence

International Nuclear Information System (INIS)

Nakamura, Ryosuke; Hamada, Norio; Ichida, Hideki; Tokunaga, Fumio; Kanematsu, Yasuo

2007-01-01

A versatile method to take femtosecond spectral snapshots of fluorescence has been developed based on a double gating technique in the combination of an optical Kerr gate and an image intensifier as an electrically driven gate set in front of a charge-coupled device detector. The application of a conventional optical-Kerr-gate method is limited to molecules with the short fluorescence lifetime up to a few hundred picoseconds, because long-lifetime fluorescence itself behaves as a source of the background signal due to insufficiency of the extinction ratio of polarizers employed for the Kerr gate. By using the image intensifier with the gate time of 200 ps, we have successfully suppressed the background signal and overcome the application limit of optical-Kerr-gate method. The system performance has been demonstrated by measuring time-resolved fluorescence spectra for laser dye solution and the riboflavin solution as a typical sample of biomolecule

Analytical Subthreshold Current and Subthreshold Swing Models for a Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFET with Back-Gate Control

Science.gov (United States)

Saramekala, Gopi Krishna; Tiwari, Pramod Kumar

2017-08-01

Two-dimensional (2D) analytical models for the subthreshold current and subthreshold swing of the back-gated fully depleted recessed-source/drain (Re-S/D) silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) are presented. The surface potential is determined by solving the 2D Poisson equation in both channel and buried-oxide (BOX) regions, considering suitable boundary conditions. To derive closed-form expressions for the subthreshold characteristics, the virtual cathode potential expression has been derived in terms of the minimum of the front and back surface potentials. The effect of various device parameters such as gate oxide and Si film thicknesses, thickness of source/drain penetration into BOX, applied back-gate bias voltage, etc. on the subthreshold current and subthreshold swing has been analyzed. The validity of the proposed models is established using the Silvaco ATLAS™ 2D device simulator.

Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints

Directory of Open Access Journals (Sweden)

Yoni Aizik

2011-01-01

Full Text Available A design scenario examined in this paper assumes that a circuit has been designed initially for high speed, and it is redesigned for low power by downsizing of the gates. In recent years, as power consumption has become a dominant issue, new optimizations of circuits are required for saving energy. This is done by trading off some speed in exchange for reduced power. For each feasible speed, an optimization problem is solved in this paper, finding new sizes for the gates such that the circuit satisfies the speed goal while dissipating minimal power. Energy/delay gain (EDG is defined as a metric to quantify the most efficient tradeoff. The EDG of the circuit is evaluated for a range of reduced circuit speeds, and the power-optimal gate sizes are compared with the initial sizes. Most of the energy savings occur at the final stages of the circuits, while the largest relative downsizing occurs in middle stages. Typical tapering factors for power efficient circuits are larger than those for speed-optimal circuits. Signal activity and signal probability affect the optimal gate sizes in the combined optimization of speed and power.

Robust quantum gates between trapped ions using shaped pulses

Energy Technology Data Exchange (ETDEWEB)

Zou, Ping, E-mail: zouping@m.scnu.edu.cn; Zhang, Zhi-Ming, E-mail: zmzhang@scnu.edu.cn

2015-12-18

We improve two existing entangling gate schemes between trapped ion qubits immersed in a large linear crystal. Based on the existing two-qubit gate schemes by applying segmented forces on the individually addressed qubits, we present a systematic method to optimize the shapes of the forces to suppress the dominant source of infidelity. The spin-dependent forces in the scheme can be from periodic photon kicks or from continuous optical pulses. The entangling gates are fast, robust, and have high fidelity. They can be used to implement scalable quantum computation and quantum simulation. - Highlights: • We present a systematic method to optimize the shape of the pulses to decouple qubits from intermediary motional modes. • Our optimized scheme can be applied to both the ultrafast gate and fast gate. • Our optimized scheme can suppress the dominant source of infidelity to arbitrary order. • When the number of trapped ions increase, the number of needed segments increases slowly.

Theory of signal and noise in double-gated nanoscale electronic pH sensors

Energy Technology Data Exchange (ETDEWEB)

Go, Jonghyun; Nair, Pradeep R.; Alam, Muhammad A. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2012-08-01

The maximum sensitivity of classical nanowire (NW)-based pH sensors is defined by the Nernst limit of 59 mV/pH. For typical noise levels in ultra-small single-gated nanowire sensors, the signal-to-noise ratio is often not sufficient to resolve pH changes necessary for a broad range of applications. Recently, a new class of double-gated devices was demonstrated to offer apparent 'super-Nernstian' response (>59 mV/pH) by amplifying the original pH signal through innovative biasing schemes. However, the pH-sensitivity of these nanoscale devices as a function of biasing configurations, number of electrodes, and signal-to-noise ratio (SNR) remains poorly understood. Even the basic question such as 'Do double-gated sensors actually resolve smaller changes in pH compared to conventional single-gated sensors in the presence of various sources of noise?' remains unanswered. In this article, we provide a comprehensive numerical and analytical theory of signal and noise of double-gated pH sensors to conclude that, while the theoretical lower limit of pH-resolution does not improve for double-gated sensors, this new class of sensors does improve the (instrument-limited) pH resolution.

Determination of prospective displacement-based gate threshold for respiratory-gated radiation delivery from retrospective phase-based gate threshold selected at 4D CT simulation

International Nuclear Information System (INIS)

Vedam, S.; Archambault, L.; Starkschall, G.; Mohan, R.; Beddar, S.

2007-01-01

and delivery gate thresholds to within 0.3%. For patient data analysis, differences between simulation and delivery gate thresholds are reported as a fraction of the total respiratory motion range. For the smaller phase interval, the differences between simulation and delivery gate thresholds are 8±11% and 14±21% with and without audio-visual biofeedback, respectively, when the simulation gate threshold is determined based on the mean respiratory displacement within the 40%-60% gating phase interval. For the longer phase interval, corresponding differences are 4±7% and 8±15% with and without audio-visual biofeedback, respectively. Alternatively, when the simulation gate threshold is determined based on the maximum average respiratory displacement within the gating phase interval, greater differences between simulation and delivery gate thresholds are observed. A relationship between retrospective simulation gate threshold and prospective delivery gate threshold for respiratory gating is established and validated for regular and nonregular respiratory motion. Using this relationship, the delivery gate threshold can be reliably estimated at the time of 4D CT simulation, thereby improving the accuracy and efficiency of respiratory-gated radiation delivery

Respiratory gating and multi field technique radiotherapy for esophageal cancer

International Nuclear Information System (INIS)

Ohta, Atsushi; Kaidu, Motoki; Tanabe, Satoshi

2017-01-01

To investigate the effects of a respiratory gating and multi field technique on the dose-volume histogram (DVH) in radiotherapy for esophageal cancer. Twenty patients who underwent four-dimensional computed tomography for esophageal cancer were included. We retrospectively created the four treatment plans for each patient, with or without the respiratory gating and multi field technique: No gating-2-field, No gating-4-field, Gating-2-field, and Gating-4-field plans. We compared the DVH parameters of the lung and heart in the No gating-2-field plan with the other three plans.Result In the comparison of the parameters in the No gating-2-field plan, there are significant differences in the Lung V 5Gy , V 20Gy , mean dose with all three plans and the Heart V 25Gy -V 40Gy with Gating-2-field plan, V 35Gy , V 40Gy , mean dose with No Gating-4-field plan and V 30Gy -V 40Gy , and mean dose with Gating-4-field plan. The lung parameters were smaller in the Gating-2-field plan and larger in the No gating-4-field and Gating-4-field plans. The heart parameters were all larger in the No gating-2-field plan. The lung parameters were reduced by the respiratory gating technique and increased by the multi field technique. The heart parameters were reduced by both techniques. It is important to select the optimal technique according to the risk of complications. (author)

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

Science.gov (United States)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

Analyzing Single-Event Gate Ruptures In Power MOSFET's

Science.gov (United States)

Zoutendyk, John A.

1993-01-01

Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

Heavy-ion-induced, gate-rupture in power MOSFETs

International Nuclear Information System (INIS)

Fischer, T.A.

1987-01-01

A new, heavy-ion-induced, burnout mechanism has been experimentally observed in power metal-oxide-semiconductor field-effect transistors (MOSFETs). This mechanism occurs when a heavy, charged particle passes through the gate oxide region of n- or p-channel devices having sufficient gate-to-source or gate-to-drain bias. The gate-rupture leads to significant permanent degradation of the device. A proposed failure mechanism is discussed and experimentally verified. In addition, the absolute immunity of p-channel devices to heavy-ion-induced, semiconductor burnout is demonstrated and discussed along with new, non-destructive, burnout testing methods

Feasibility study of multi-pass respiratory-gated helical tomotherapy of a moving target via binary MLC closure

Science.gov (United States)

Kim, Bryan; Chen, Jeff; Kron, Tomas; Battista, Jerry

2010-11-01

Gated radiotherapy of lung lesions is particularly complex for helical tomotherapy, due to the simultaneous motions of its three subsystems (gantry, couch and collimator). We propose a new way to implement gating for helical tomotherapy, namely multi-pass respiratory gating. In this method, gating is achieved by delivering only the beam projections that occur within a respiratory gating window, while blocking the rest of the beam projections by fully closing all collimator leaves. Due to the continuous couch motion, the planned beam projections must be delivered over multiple passes of radiation deliveries. After each pass, the patient couch is reset to its starting position, and the treatment recommences at a different phase of tumour motion to 'fill in' the previously blocked beam projections. The gating process may be repeated until the plan dose is delivered (full gating), or halted after a certain number of passes, with the entire remaining dose delivered in a final pass without gating (partial gating). The feasibility of the full gating approach was first tested for sinusoidal target motion, through experimental measurements with film and computer simulation. The optimal gating parameters for full and partial gating methods were then determined for various fractionation schemes through computer simulation, using a patient respiratory waveform. For sinusoidal motion, the PTV dose deviations of -29 to 5% observed without gating were reduced to range from -1 to 3% for a single fraction, with a 4 pass full gating. For a patient waveform, partial gating required fewer passes than full gating for all fractionation schemes. For a single fraction, the maximum allowed residual motion was only 4 mm, requiring large numbers of passes for both full (12) and partial (7 + 1) gating methods. The number of required passes decreased significantly for 3 and 30 fractions, allowing residual motion up to 7 mm. Overall, the multi-pass gating technique was shown to be a promising

Feasibility study of multi-pass respiratory-gated helical tomotherapy of a moving target via binary MLC closure

Energy Technology Data Exchange (ETDEWEB)

Kim, Bryan; Chen, Jeff; Battista, Jerry [London Regional Cancer Program, London Health Sciences Centre, London, ON (Canada); Kron, Tomas, E-mail: bryan.kim@lhsc.on.c [Peter MacCallum Cancer Center, Melbourne (Australia)

2010-11-21

Gated radiotherapy of lung lesions is particularly complex for helical tomotherapy, due to the simultaneous motions of its three subsystems (gantry, couch and collimator). We propose a new way to implement gating for helical tomotherapy, namely multi-pass respiratory gating. In this method, gating is achieved by delivering only the beam projections that occur within a respiratory gating window, while blocking the rest of the beam projections by fully closing all collimator leaves. Due to the continuous couch motion, the planned beam projections must be delivered over multiple passes of radiation deliveries. After each pass, the patient couch is reset to its starting position, and the treatment recommences at a different phase of tumour motion to 'fill in' the previously blocked beam projections. The gating process may be repeated until the plan dose is delivered (full gating), or halted after a certain number of passes, with the entire remaining dose delivered in a final pass without gating (partial gating). The feasibility of the full gating approach was first tested for sinusoidal target motion, through experimental measurements with film and computer simulation. The optimal gating parameters for full and partial gating methods were then determined for various fractionation schemes through computer simulation, using a patient respiratory waveform. For sinusoidal motion, the PTV dose deviations of -29 to 5% observed without gating were reduced to range from -1 to 3% for a single fraction, with a 4 pass full gating. For a patient waveform, partial gating required fewer passes than full gating for all fractionation schemes. For a single fraction, the maximum allowed residual motion was only 4 mm, requiring large numbers of passes for both full (12) and partial (7 + 1) gating methods. The number of required passes decreased significantly for 3 and 30 fractions, allowing residual motion up to 7 mm. Overall, the multi-pass gating technique was shown to be a

Integration issues of high-k and metal gate into conventional CMOS technology

International Nuclear Information System (INIS)

Song, S.C.; Zhang, Z.; Huffman, C.; Bae, S.H.; Sim, J.H.; Kirsch, P.; Majhi, P.; Moumen, N.; Lee, B.H.

2006-01-01

Issues surrounding the integration of Hf-based high-k dielectrics with metal gates in a conventional CMOS flow are discussed. The careful choice of a gate stack process as well as optimization of other CMOS process steps enables robust CMOSFETs with a wide process latitude. HfO 2 of a 2 nm physical thickness shows complete suppression of transient charge trapping resulting from a significant reduction in film volume as well as kinetically suppressed crystallization. Metal thickness is also critical when optimizing physical stress effects and minimizing dopant diffusion. A high temperature anneal after source and drain implantation in a conventional CMOSFET process reduces the interface state density and improves electron mobility

Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET.

Science.gov (United States)

Mohd Razip Wee, Mohd F; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y

2013-01-01

A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm(2)/Vs are achieved for the gate length and width of 0.2 µm and 30 µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10(-8) A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

Science.gov (United States)

Mohd Razip Wee, Mohd F.; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y.

2013-01-01

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm2/Vs are achieved for the gate length and width of 0.2 µm and 30µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10−8 A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared. PMID:24367548

128-slice Dual-source Computed Tomography Coronary Angiography in Patients with Atrial Fibrillation: Image Quality and Radiation Dose of Prospectively Electrocardiogram-triggered Sequential Scan Compared with Retrospectively Electrocardiogram-gated Spiral Scan.

Science.gov (United States)

Lin, Lu; Wang, Yi-Ning; Kong, Ling-Yan; Jin, Zheng-Yu; Lu, Guang-Ming; Zhang, Zhao-Qi; Cao, Jian; Li, Shuo; Song, Lan; Wang, Zhi-Wei; Zhou, Kang; Wang, Ming

2013-01-01

Objective To evaluate the image quality (IQ) and radiation dose of 128-slice dual-source computed tomography (DSCT) coronary angiography using prospectively electrocardiogram (ECG)-triggered sequential scan mode compared with ECG-gated spiral scan mode in a population with atrial fibrillation. Methods Thirty-two patients with suspected coronary artery disease and permanent atrial fibrillation referred for a second-generation 128-slice DSCT coronary angiography were included in the prospective study. Of them, 17 patients (sequential group) were randomly selected to use a prospectively ECG-triggered sequential scan, while the other 15 patients (spiral group) used a retrospectively ECG-gated spiral scan. The IQ was assessed by two readers independently, using a four-point grading scale from excel-lent (grade 1) to non-assessable (grade 4), based on the American Heart Association 15-segment model. IQ of each segment and effective dose of each patient were compared between the two groups. Results The mean heart rate (HR) of the sequential group was 96±27 beats per minute (bpm) with a variation range of 73±25 bpm, while the mean HR of the spiral group was 86±22 bpm with a variationrange of 65±24 bpm. Both of the mean HR (t=1.91, P=0.243) and HR variation range (t=0.950, P=0.350) had no significant difference between the two groups. In per-segment analysis, IQ of the sequential group vs. spiral group was rated as excellent (grade 1) in 190/244 (78%) vs. 177/217 (82%) by reader1 and 197/245 (80%) vs. 174/214 (81%) by reader2, as non-assessable (grade 4) in 4/244 (2%) vs. 2/217 (1%) by reader1 and 6/245 (2%) vs. 4/214 (2%) by reader2. Overall averaged IQ per-patient in the sequential and spiral group showed equally good (1.27±0.19 vs. 1.25±0.22, Z=-0.834, P=0.404). The effective radiation dose of the sequential group reduced significantly compared with the spiral group (4.88±1.77 mSv vs. 10.20±3.64 mSv; t=-5.372, P=0.000). Conclusion Compared with retrospectively

Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

DEFF Research Database (Denmark)

Igor, Mucha

1997-01-01

The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...

Coherent molecular transistor: control through variation of the gate wave function.

Science.gov (United States)

Ernzerhof, Matthias

2014-03-21

In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

Coherent molecular transistor: Control through variation of the gate wave function

International Nuclear Information System (INIS)

Ernzerhof, Matthias

2014-01-01

In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor

Visualization of neonatal coronary arteries on multidetector row CT: ECG-gated versus non-ECG-gated technique

International Nuclear Information System (INIS)

Tsai, I.C.; Lee, Tain; Chen, Min-Chi; Fu, Yun-Ching; Jan, Sheng-Lin; Wang, Chung-Chi; Chang, Yen

2007-01-01

Multidetector CT (MDCT) seems to be a promising tool for detection of neonatal coronary arteries, but whether the ECG-gated or non-ECG-gated technique should be used has not been established. To compare the detection rate and image quality of neonatal coronary arteries on MDCT using ECG-gated and non-ECG-gated techniques. Twelve neonates with complex congenital heart disease were included. The CT scan was acquired using an ECG-gated technique, and the most quiescent phase of the RR interval was selected to represent the ECG-gated images. The raw data were then reconstructed without the ECG signal to obtain non-ECG-gated images. The detection rate and image quality of nine coronary artery segments in the two sets of images were then compared. A two-tailed paired t test was used with P values <0.05 considered as statistically significant. In all coronary segments the ECG-gated technique had a better detection rate and produced images of better quality. The difference between the two techniques ranged from 25% in the left main coronary artery to 100% in the distal right coronary artery. For neonates referred for MDCT, if evaluation of coronary artery anatomy is important for the clinical management or surgical planning, the ECG-gated technique should be used because it can reliably detect the coronary arteries. (orig.)

Amplifying genetic logic gates.

Science.gov (United States)

Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

2013-05-03

Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

Respiratory gated lung CT using 320-row area detector CT

International Nuclear Information System (INIS)

Sakamoto, Ryo; Noma, Satoshi; Higashino, Takanori

2010-01-01

Three hundred and twenty-row Area Detector CT (ADCT) has made it possible to scan whole lung field with prospective respiratory gated wide volume scan. We evaluated whether the respiratory gated wide volume scan enables to reduce motion induced artifacts in the lung area. Helical scan and respiratory gated wide volume scan were performed in 5 patients and 10 healthy volunteers under spontaneous breathing. Significant reduction of motion artifact and superior image quality were obtained in respiratory gated scan in comparison with helical scan. Respiratory gated wide volume scan is an unique method using ADCT, and is able to reduce motion artifacts in lung CT scans of patients unable to suspend respiration in clinical scenes. (author)

Light-effect transistor (LET with multiple independent gating controls for optical logic gates and optical amplification

Directory of Open Access Journals (Sweden)

Jason eMarmon

2016-03-01

Full Text Available Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g. field-effect transistors (FETs, remains the same. However, further FET down scaling is facing physical and technical challenges. A light-effect transistor (LET offers electronic-optical hybridization at the component level, which can continue Moore’s law to quantum region without requiring a FET’s fabrication complexity, e.g. physical gate and doping, by employing optical gating and photoconductivity. Multiple independent gates are therefore readily realized to achieve unique functionalities without increasing chip space. Here we report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs show output and transfer characteristics resembling advanced FETs, e.g. on/off ratios up to ~1.0x106 with a source-drain voltage of ~1.43 V, gate-power of ~260 nW, and subthreshold swing of ~0.3 nW/decade (excluding losses. Our work offers new electronic-optical integration strategies and electronic and optical computing approaches.

Prospectively Electrocardiogram-Gated High-Pitch Spiral Acquisition Mode Dual-Source CT Coronary Angiography in Patients with High Heart Rates: Comparison with Retrospective Electrocardiogram-Gated Spiral Acquisition Mode

Energy Technology Data Exchange (ETDEWEB)

Sun, Kai; Ma, Rui; Wang, Li Jun [Dept. of Radiology, Baotou Central Hospital, Baotou (China); Li, Li Gang; Chen, Jiu Hong [CT BM Clinic Marketing, Siemens Healthcare, Beijing (China)

2012-11-15

To assess the image quality and effective radiation dose of prospectively electrocardiogram (ECG)-gated high-pitch spiral acquisition mode (flash mode) of dual-source CT (DSCT) coronary angiography (CTCA) in patients with high heart rates (HRs) as compared with retrospectively ECG-gated spiral acquisition mode. Two hundred and sixty-eight consecutive patients (132 female, mean age: 55 {+-} 11 years) with mean HR > 65 beats per minute (bpm) were prospectively included in this study. The patients were divided into two groups. Collection was performed in group A CTCA using flash mode setting at 20-30% of the R-R interval, and retrospectively ECG-gated spiral acquisition mode in group B. The image noise, contrast-to-noise ratio (CNR), image quality scores, effective radiation dose and influencing factors on image quality between the two groups were assessed. There were no significant differences in image quality scores and proportions of non-diagnostic coronary artery segments between two groups (image quality scores: 1.064 {+-} 0.306 [group A] vs. 1.084 {+-} 0.327 [group B], p = 0.063; proportion of non-diagnostic coronary artery segments: segment-based analysis 1.52% (group A) vs. 1.74% (group B), p = 0.345; patient-based analysis 7.5% (group A) vs. 6.7% (group B), p = 0.812). The estimated radiation dose was 1.0 {+-} 0.16 mSv in group A and 7.1 {+-} 1.05 mSv in group B (p = 0.001). In conclusion, in patients with HRs > 65 bpm without cardiac arrhythmia, the prospectively high-pitch spiral-acquisition mode with image-acquired timing set at 20-30% of the R-R interval provides a similar image quality and low rate of non-diagnostic coronary segments to the retrospectively ECG-gated low-pitch spiral acquisition mode, with significant reduction of radiation exposure.

Prospectively Electrocardiogram-Gated High-Pitch Spiral Acquisition Mode Dual-Source CT Coronary Angiography in Patients with High Heart Rates: Comparison with Retrospective Electrocardiogram-Gated Spiral Acquisition Mode

International Nuclear Information System (INIS)

Sun, Kai; Ma, Rui; Wang, Li Jun; Li, Li Gang; Chen, Jiu Hong

2012-01-01

To assess the image quality and effective radiation dose of prospectively electrocardiogram (ECG)-gated high-pitch spiral acquisition mode (flash mode) of dual-source CT (DSCT) coronary angiography (CTCA) in patients with high heart rates (HRs) as compared with retrospectively ECG-gated spiral acquisition mode. Two hundred and sixty-eight consecutive patients (132 female, mean age: 55 ± 11 years) with mean HR > 65 beats per minute (bpm) were prospectively included in this study. The patients were divided into two groups. Collection was performed in group A CTCA using flash mode setting at 20-30% of the R-R interval, and retrospectively ECG-gated spiral acquisition mode in group B. The image noise, contrast-to-noise ratio (CNR), image quality scores, effective radiation dose and influencing factors on image quality between the two groups were assessed. There were no significant differences in image quality scores and proportions of non-diagnostic coronary artery segments between two groups (image quality scores: 1.064 ± 0.306 [group A] vs. 1.084 ± 0.327 [group B], p = 0.063; proportion of non-diagnostic coronary artery segments: segment-based analysis 1.52% (group A) vs. 1.74% (group B), p = 0.345; patient-based analysis 7.5% (group A) vs. 6.7% (group B), p = 0.812). The estimated radiation dose was 1.0 ± 0.16 mSv in group A and 7.1 ± 1.05 mSv in group B (p = 0.001). In conclusion, in patients with HRs > 65 bpm without cardiac arrhythmia, the prospectively high-pitch spiral-acquisition mode with image-acquired timing set at 20-30% of the R-R interval provides a similar image quality and low rate of non-diagnostic coronary segments to the retrospectively ECG-gated low-pitch spiral acquisition mode, with significant reduction of radiation exposure.

Application of ultra-fast high-resolution gated-image intensifiers to laser fusion studies

International Nuclear Information System (INIS)

Lieber, A.J.; Benjamin, R.F.; Sutphin, H.D.; McCall, G.H.

1975-01-01

Gated-image intensifiers for fast framing have found high utility in laser-target interaction studies. X-ray pinhole camera photographs which can record asymmetries of laser-target interactions have been instrumental in further system design. High-resolution high-speed x-ray images of laser irradiated targets are formed using pinhole optics and electronically amplified by proximity focused channelplate intensifiers before being recorded on film. Spectral resolution is obtained by filtering. In these applications shutter duration is determined by source duration. Electronic gating serves to reduce background thereby enhancing signal-to-noise ratio. Cameras are used to view the self light of the interaction but may also be used for shadowgraphs. Sources for shadowgraphs may be sequenced to obtain a series of pictures with effective rates of 10 10 frame/s. Multiple aperatures have been used to obtain stereo x-ray views, yielding three dimensional information about the interactions. (author)

SU-E-J-169: The Dosimetric and Temporal Effects of Respiratory-Gated Radiation Therapy in Lung Cancer Patients

International Nuclear Information System (INIS)

Rouabhi, O; Gross, B; Xia, J; Bayouth, J

2015-01-01

Purpose: To evaluate the dosimetric and temporal effects of high dose rate treatment mode for respiratory-gated radiation therapy in lung cancer patients. Methods: Treatment plans from five lung cancer patients (3 nongated (Group 1), 2 gated at 80EX-80IN (Group 2)) were retrospectively evaluated. The maximum tumor motions range from 6–12 mm. Using the same planning criteria, four new treatment plans, corresponding to four gating windows (20EX–20IN, 40EX–40IN, 60EX–60IN, and 80EX–80IN), were generated for each patient. Mean tumor dose (MTD), mean lung dose (MLD), and lung V20 were used to assess the dosimetric effects. A MATLAB algorithm was developed to compute treatment time by considering gantry rotation time, time to position collimator leaves, dose delivery time (scaled relative to the gating window), and communication overhead. Treatment delivery time for each plan was estimated using a 500 MU/min dose rate for the original plans and a 1500 MU/min dose rate for the gated plans. Results: Differences in MTD were less than 1Gy across plans for all five patients. MLD and lung V20 were on average reduced between −16.1% to −6.0% and −20.0% to −7.2%, respectively for non-gated plans when compared with the corresponding gated plans, and between − 5.8% to −4.2% and −7.0% to −5.4%, respectively for plans originally gated at 80EX–80IN when compared with the corresponding 20EX-20IN to 60EX– 60IN gated plans. Treatment delivery times of gated plans using high dose rate were reduced on average between −19.7% (−1.9min) to −27.2% (−2.7min) for originally non-gated plans and −15.6% (−0.9min) to −20.3% (−1.2min) for originally 80EX-80IN gated plans. Conclusion: Respiratory-gated radiation therapy in lung cancer patients can reduce lung toxicity, while maintaining tumor dose. Using a gated high-dose-rate treatment, delivery time comparable to non-gated normal-dose-rate treatment can be achieved. This research is supported by Siemens

Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

Directory of Open Access Journals (Sweden)

Sangeeta Singh

2016-03-01

Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

International Nuclear Information System (INIS)

Zhuge, Jing; Huang, Ru; Wang, Yangyuan; Verhulst, Anne S; Vandenberghe, William G; Dehaene, Wim; Groeseneken, Guido

2011-01-01

This paper investigates the potential of tunnel field-effect transistors (TFETs), with emphasis on short-gate TFETs, by simulation for low-power digital applications having a supply voltage lower than 0.5 V. A transient study shows that the tunneling current has a negligible contribution in charging and discharging the gate capacitance of TFETs. In spite of a higher resistance region in the short-gate TFET, the gate (dis)charging speed still meets low-voltage application requirements. A circuit analysis is performed on short-gate TFETs with different materials, such as Si, Ge and heterostructures in terms of voltage overshoot, delay, static power, energy consumption and energy delay product (EDP). These results are compared to MOSFET and full-gate TFET performance. It is concluded that short-gate heterostructure TFETs (Ge–source for nTFET, In 0.6 Ga 0.4 As–source for pTFET) are promising candidates to extend the supply voltage to lower than 0.5 V because they combine the advantage of a low Miller capacitance, due to the short-gate structures, and strong drive current in TFETs, due to the narrow bandgap material in the source. At a supply voltage of 0.4 V and for an EOT and channel length of 0.6 nm and 40 nm, respectively, a three-stage inverter chain based on short-gate heterostructure TFETs saves 40% energy consumption per cycle at the same delay and shows 60%–75% improvement of EDP at the same static power, compared to its full-gate counterpart. When compared to the MOSFET, better EDP can be achieved in the heterostructure TFET especially at low static power consumption

Novel technique for addressing streak artifact in gated dual-source MDCT angiography utilizing ECG-editing

Energy Technology Data Exchange (ETDEWEB)

Meyer, Laura T.; Boll, Daniel T. [Duke University Medical Center, Department of Radiology, Box 3808, Durham, NC (United States)

2008-11-15

Streak artifact is an important source of image degradation in computed tomographic imaging. In coronary MDCT angiography, streak artifact from pacemaker leads in the SVC can render segments of the right coronary artery uninterpretable. With current technology in clinical practice, there is no effective way to eliminate streak artifact in coronary MDCT angiography entirely. We propose a technique to minimize the impact of streak artifact in retrospectively gated coronary MDCT angiography by utilizing small shifts in the reconstruction window. In our experience, previously degraded portions of the coronary vasculature were able to be well evaluated using this technique. (orig.)

The clinical implementation of respiratory-gated intensity-modulated radiotherapy

International Nuclear Information System (INIS)

Keall, Paul; Vedam, Sastry; George, Rohini; Bartee, Chris; Siebers, Jeffrey; Lerma, Fritz; Weiss, Elisabeth; Chung, Theodore

2006-01-01

The clinical use of respiratory-gated radiotherapy and the application of intensity-modulated radiotherapy (IMRT) are 2 relatively new innovations to the treatment of lung cancer. Respiratory gating can reduce the deleterious effects of intrafraction motion, and IMRT can concurrently increase tumor dose homogeneity and reduce dose to critical structures including the lungs, spinal cord, esophagus, and heart. The aim of this work is to describe the clinical implementation of respiratory-gated IMRT for the treatment of non-small cell lung cancer. Documented clinical procedures were developed to include a tumor motion study, gated CT imaging, IMRT treatment planning, and gated IMRT delivery. Treatment planning procedures for respiratory-gated IMRT including beam arrangements and dose-volume constraints were developed. Quality assurance procedures were designed to quantify both the dosimetric and positional accuracy of respiratory-gated IMRT, including film dosimetry dose measurements and Monte Carlo dose calculations for verification and validation of individual patient treatments. Respiratory-gated IMRT is accepted by both treatment staff and patients. The dosimetric and positional quality assurance test results indicate that respiratory-gated IMRT can be delivered accurately. If carefully implemented, respiratory-gated IMRT is a practical alternative to conventional thoracic radiotherapy. For mobile tumors, respiratory-gated radiotherapy is used as the standard of care at our institution. Due to the increased workload, the choice of IMRT is taken on a case-by-case basis, with approximately half of the non-small cell lung cancer patients receiving respiratory-gated IMRT. We are currently evaluating whether superior tumor coverage and limited normal tissue dosing will lead to improvements in local control and survival in non-small cell lung cancer

Study on effective MOSFET channel length extracted from gate capacitance

Science.gov (United States)

Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

2018-01-01

The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

Energy-loss return gate via liquid dielectric polarization.

Science.gov (United States)

Kim, Taehun; Yong, Hyungseok; Kim, Banseok; Kim, Dongseob; Choi, Dukhyun; Park, Yong Tae; Lee, Sangmin

2018-04-12

There has been much research on renewable energy-harvesting techniques. However, owing to increasing energy demands, significant energy-related issues remain to be solved. Efforts aimed at reducing the amount of energy loss in electric/electronic systems are essential for reducing energy consumption and protecting the environment. Here, we design an energy-loss return gate system that reduces energy loss from electric/electronic systems by utilizing the polarization of liquid dielectrics. The use of a liquid dielectric material in the energy-loss return gate generates electrostatic potential energy while reducing the dielectric loss of the electric/electronic system. Hence, an energy-loss return gate can make breakthrough impacts possible by amplifying energy-harvesting efficiency, lowering the power consumption of electronics, and storing the returned energy. Our study indicates the potential for enhancing energy-harvesting technologies for electric/electronics systems, while increasing the widespread development of these systems.

Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

Science.gov (United States)

Chae, Hee Jae; Seok, Ki Hwan; Lee, Sol Kyu; Joo, Seung Ki

2018-04-01

A novel inverted staggered metal-induced laterally crystallized (MILC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with a combination of a planarized gate and an overlap/off-set at the source-gate/drain-gate structure were fabricated and characterized. While the MILC process is advantageous for fabricating inverted staggered poly-Si TFTs, MILC TFTs reveal higher leakage current than TFTs crystallized by other processes due to their high trap density of Ni contamination. Due to this drawback, the planarized gate and overlap/off-set structure were applied to inverted staggered MILC TFTs. The proposed device shows drastic suppression of leakage current and pinning phenomenon by reducing the lateral electric field and the space-charge limited current from the gate to the drain.

Double optical gating

Science.gov (United States)

Gilbertson, Steve

The observation and control of dynamics in atomic and molecular targets requires the use of laser pulses with duration less than the characteristic timescale of the process which is to be manipulated. For electron dynamics, this time scale is on the order of attoseconds where 1 attosecond = 10 -18 seconds. In order to generate pulses on this time scale, different gating methods have been proposed. The idea is to extract or "gate" a single pulse from an attosecond pulse train and switch off all the other pulses. While previous methods have had some success, they are very difficult to implement and so far very few labs have access to these unique light sources. The purpose of this work is to introduce a new method, called double optical gating (DOG), and to demonstrate its effectiveness at generating high contrast single isolated attosecond pulses from multi-cycle lasers. First, the method is described in detail and is investigated in the spectral domain. The resulting attosecond pulses produced are then temporally characterized through attosecond streaking. A second method of gating, called generalized double optical gating (GDOG), is also introduced. This method allows attosecond pulse generation directly from a carrier-envelope phase un-stabilized laser system for the first time. Next the methods of DOG and GDOG are implemented in attosecond applications like high flux pulses and extreme broadband spectrum generation. Finally, the attosecond pulses themselves are used in experiments. First, an attosecond/femtosecond cross correlation is used for characterization of spatial and temporal properties of femtosecond pulses. Then, an attosecond pump, femtosecond probe experiment is conducted to observe and control electron dynamics in helium for the first time.

Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

Science.gov (United States)

Song, In-Hyouk; Forfang, William B. D.; Cole, Bryan; You, Byoung Hee

2014-10-01

The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz.

Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

International Nuclear Information System (INIS)

Song, In-Hyouk; Forfang, William B D; Cole, Bryan; Hee You, Byoung

2014-01-01

The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz. (paper)

Design of acoustic logging signal source of imitation based on field programmable gate array

Science.gov (United States)

Zhang, K.; Ju, X. D.; Lu, J. Q.; Men, B. Y.

2014-08-01

An acoustic logging signal source of imitation is designed and realized, based on the Field Programmable Gate Array (FPGA), to improve the efficiency of examining and repairing acoustic logging tools during research and field application, and to inspect and verify acoustic receiving circuits and corresponding algorithms. The design of this signal source contains hardware design and software design,and the hardware design uses an FPGA as the control core. Four signals are made first by reading the Random Access Memory (RAM) data which are inside the FPGA, then dealing with the data by digital to analog conversion, amplification, smoothing and so on. Software design uses VHDL, a kind of hardware description language, to program the FPGA. Experiments illustrate that the ratio of signal to noise for the signal source is high, the waveforms are stable, and also its functions of amplitude adjustment, frequency adjustment and delay adjustment are in accord with the characteristics of real acoustic logging waveforms. These adjustments can be used to imitate influences on sonic logging received waveforms caused by many kinds of factors such as spacing and span of acoustic tools, sonic speeds of different layers and fluids, and acoustic attenuations of different cementation planes.

The mechano-gated channel inhibitor GsMTx4 reduces the exercise pressor reflex in rats with ligated femoral arteries.

Science.gov (United States)

Copp, Steven W; Kim, Joyce S; Ruiz-Velasco, Victor; Kaufman, Marc P

2016-05-01

Mechanical and metabolic stimuli arising from contracting muscles evoke the exercise pressor reflex. This reflex is greater in a rat model of simulated peripheral arterial disease in which a femoral artery is chronically ligated than it is in rats with freely perfused femoral arteries. The role played by the mechanically sensitive component of the exaggerated exercise pressor reflex in ligated rats is unknown. We tested the hypothesis that the mechano-gated channel inhibitor GsMTx4, a relatively selective inhibitor of mechano-gated Piezo channels, reduces the exercise pressor reflex in decerebrate rats with ligated femoral arteries. Injection of 10 μg of GsMTx4 into the arterial supply of the hindlimb reduced the pressor response to Achilles tendon stretch (a purely mechanical stimulus) but had no effect on the pressor responses to intra-arterial injection of α,β-methylene ATP or lactic acid (purely metabolic stimuli). Moreover, injection of 10 μg of GsMTx4 into the arterial supply of the hindlimb reduced both the integrated pressor area (control 535 ± 21, GsMTx4 218 ± 24 mmHg·s; P reflex contributes to the exaggerated exercise pressor reflex during intermittent hindlimb muscle contractions in rats with ligated femoral arteries. Copyright © 2016 the American Physiological Society.

Detection of Airway Anomalies in?Pediatric?Patients with Cardiovascular Anomalies with Low Dose Prospective ECG-Gated Dual-Source CT

OpenAIRE

Jiao, Hui; Xu, Zhuodong; Wu, Lebin; Cheng, Zhaoping; Ji, Xiaopeng; Zhong, Hai; Meng, Chen

2013-01-01

OBJECTIVES: To assess the feasibility of low-dose prospective ECG-gated dual-source CT (DSCT) in detecting airway anomalies in pediatric patients with cardiovascular anomalies compared with flexible tracheobronchoscopy (FTB). METHODS: 33 pediatrics with respiratory symptoms who had been revealed cardiovascular anomalies by transthoracic echocardiography underwent FTB and contrast material-enhanced prospective ECG-triggering CT were enrolled. The study was approved by our institution review bo...

A VHF Class E DC-DC Converter with Self-Oscillating Gate Driver

DEFF Research Database (Denmark)

Andersen, Toke Meyer; Christensen, Søren K.; Knott, Arnold

2011-01-01

, is inherently resonant, and switching losses are greatly reduced by ensuring Zero Voltage Switching (ZVS) of the power semiconductor devices. A design method to ensure ZVS operation when combining the inverter, rectifier, and gate driver is provided. Several parasitic effects and their influence on converter......This paper describes the analysis and design of a DC-DC converter topology which is operational at frequencies in the Very High Frequency (VHF) band ranging from 30 MHz − 300 MHz. The presented topology, which consists of a class E inverter, class E rectifier, and self-oscillating gate driver...... operation are discussed, and measurement results of a 100 MHz prototype converter are presented and evaluated. The designed prototype converter verifies the described topology....

Design and operation of the wide angular-range chopper spectrometer ARCS at the Spallation Neutron Source

International Nuclear Information System (INIS)

Abernathy, D. L.; Stone, M. B.; Loguillo, M. J.; Lucas, M. S.; Delaire, O.; Tang, X.; Lin, J. Y. Y.; Fultz, B.

2012-01-01

The wide angular-range chopper spectrometer ARCS at the Spallation Neutron Source (SNS) is optimized to provide a high neutron flux at the sample position with a large solid angle of detector coverage. The instrument incorporates modern neutron instrumentation, such as an elliptically focused neutron guide, high speed magnetic bearing choppers, and a massive array of 3 He linear position sensitive detectors. Novel features of the spectrometer include the use of a large gate valve between the sample and detector vacuum chambers and the placement of the detectors within the vacuum, both of which provide a window-free final flight path to minimize background scattering while allowing rapid changing of the sample and sample environment equipment. ARCS views the SNS decoupled ambient temperature water moderator, using neutrons with incident energy typically in the range from 15 to 1500 meV. This range, coupled with the large detector coverage, allows a wide variety of studies of excitations in condensed matter, such as lattice dynamics and magnetism, in both powder and single-crystal samples. Comparisons of early results to both analytical and Monte Carlo simulation of the instrument performance demonstrate that the instrument is operating as expected and its neutronic performance is understood. ARCS is currently in the SNS user program and continues to improve its scientific productivity by incorporating new instrumentation to increase the range of science covered and improve its effectiveness in data collection.

Dual-gated cardiac PET-clinical feasibility study

Energy Technology Data Exchange (ETDEWEB)

Teraes, Mika; Kokki, Tommi; Noponen, Tommi; Hoppela, Erika; Sipilae, Hannu T.; Knuuti, Juhani [Turku PET Centre, PO BOX 52, Turku (Finland); Durand-Schaefer, Nicolas [General Electric Medical Systems, Buc (France); Pietilae, Mikko [Turku University Hospital, Department of Internal Medicine, Turku (Finland); Kiss, Jan [Turku University Hospital, Department of Surgery, Turku (Finland)

2010-03-15

Both respiratory and cardiac motions reduce image quality in myocardial imaging. For accurate imaging of small structures such as vulnerable coronary plaques, simultaneous cardiac and respiratory gating is warranted. This study tests the feasibility of a recently developed robust method for cardiac-respiratory gating. List-mode data with triggers from respiratory and cardiac cycles are rearranged into dual-gated segments and reconstructed with standard algorithms of a commercial PET/CT scanner. Cardiac gates were defined as three fixed phases and one variable diastolic phase. Chest motion was measured with a respiratory gating device and post-processed to determine gates. Preservation of quantification in dual-gated images was tested with an IEC whole-body phantom. Minipig and human studies were performed to evaluate the feasibility of the method. In minipig studies, a coronary catheter with radioactive tip was guided in coronary artery for in vivo and ex vivo acquisitions. Dual gating in humans with suspected cardiac disorders was performed using 18-F-FDG as a tracer. The method was found feasible for in vivo imaging and the radioactive catheter tip was better resolved in gated images. In human studies, the dual gating was found feasible and easy for clinical routine. Maximal movement of myocardial surface in cranio-caudal direction was over 20 mm. The shape of myocardium was clearly different between the gates and papillary muscles become more visible in diastolic images. The first clinical experiences using robust cardiac-respiratory dual gating are encouraging. Further testing in larger clinical populations using tracers designed especially for plaque imaging is warranted. (orig.)

Dual-gated cardiac PET-clinical feasibility study

International Nuclear Information System (INIS)

Teraes, Mika; Kokki, Tommi; Noponen, Tommi; Hoppela, Erika; Sipilae, Hannu T.; Knuuti, Juhani; Durand-Schaefer, Nicolas; Pietilae, Mikko; Kiss, Jan

2010-01-01

Both respiratory and cardiac motions reduce image quality in myocardial imaging. For accurate imaging of small structures such as vulnerable coronary plaques, simultaneous cardiac and respiratory gating is warranted. This study tests the feasibility of a recently developed robust method for cardiac-respiratory gating. List-mode data with triggers from respiratory and cardiac cycles are rearranged into dual-gated segments and reconstructed with standard algorithms of a commercial PET/CT scanner. Cardiac gates were defined as three fixed phases and one variable diastolic phase. Chest motion was measured with a respiratory gating device and post-processed to determine gates. Preservation of quantification in dual-gated images was tested with an IEC whole-body phantom. Minipig and human studies were performed to evaluate the feasibility of the method. In minipig studies, a coronary catheter with radioactive tip was guided in coronary artery for in vivo and ex vivo acquisitions. Dual gating in humans with suspected cardiac disorders was performed using 18-F-FDG as a tracer. The method was found feasible for in vivo imaging and the radioactive catheter tip was better resolved in gated images. In human studies, the dual gating was found feasible and easy for clinical routine. Maximal movement of myocardial surface in cranio-caudal direction was over 20 mm. The shape of myocardium was clearly different between the gates and papillary muscles become more visible in diastolic images. The first clinical experiences using robust cardiac-respiratory dual gating are encouraging. Further testing in larger clinical populations using tracers designed especially for plaque imaging is warranted. (orig.)

Dual Z-Source Inverter With Three-Level Reduced Common-Mode Switching

DEFF Research Database (Denmark)

Gao, Feng; Loh, Poh Chiang; Blaabjerg, Frede

2007-01-01

This paper presents the design of a dual Z-source inverter that can be used with either a single dc source or two isolated dc sources. Unlike traditional inverters, the integration of a properly designed Z-source network and semiconductor switches to the proposed dual inverter allows buck......-boost power conversion to be performed over a wide modulation range, with three-level output waveforms generated. The connection of an additional transformer to the inverter ac output also allows all generic wye-or delta-connected loads with three-wire or four-wire configuration to be supplied by the inverter....... Modulationwise, the dual inverter can be controlled using a carefully designed carrier-based pulsewidth-modulation (PWM) scheme that will always ensure balanced voltage boosting of the Z-source network while simultaneously achieving reduced common-mode switching. Because of the omission of dead-time delays...

Gated myocardial SPECT using spatial and temporal filtering

International Nuclear Information System (INIS)

Hatton, R.L.; Hutton, B.F.; Kyme, A.Z.; Larcos, G.

2002-01-01

Full text: Standard protocols for examining myocardial perfusion and motion defects involve the use of gated SPECT images, and a composite of the gated frames. This study examines the usefulness of extracting one or a combination of frames from the gated image to assess perfusion, and whether the addition of a temporal filter to the gated image improves signal to noise. Choice of the most appropriate frame was also considered. Sixteen and eight frame gated SPECT studies were simulated using the dynamic NURBS-based cardiac torso (NCAT) phantom. Variously sized perfusion defects were included in the inferior wall to assess contrast to normal tissue. Scatter and attenuation were not included. Butterworth spatial cutoff frequencies were varied to establish the most appropriate combination of temporal/spatial filters to reduce noise and retain contrast in the images. The 16 frame data produced higher ejection fraction across all spatial filter cutoffs, and generally was unaffected by temporal filtering. Temporal filtering reduced the noise in a uniform liver region in the gated images to within 25% of the composite image noise. The lesion extent and contrast were greater in the end-diastolic frames compared to end-systolic and mid-cycle frames. In conclusion, by using a temporally filtered end-diastolic image from the gated sequence, a favourable balance between noise and contrast can be achieved. Work is progress to confirm these findings in the clinical situation. Copyright (2002) The Australian and New Zealand Society of Nuclear Medicine Inc

External radioactive markers for PET data-driven respiratory gating in positron emission tomography.

Science.gov (United States)

Büther, Florian; Ernst, Iris; Hamill, James; Eich, Hans T; Schober, Otmar; Schäfers, Michael; Schäfers, Klaus P

2013-04-01

Respiratory gating is an established approach to overcoming respiration-induced image artefacts in PET. Of special interest in this respect are raw PET data-driven gating methods which do not require additional hardware to acquire respiratory signals during the scan. However, these methods rely heavily on the quality of the acquired PET data (statistical properties, data contrast, etc.). We therefore combined external radioactive markers with data-driven respiratory gating in PET/CT. The feasibility and accuracy of this approach was studied for [(18)F]FDG PET/CT imaging in patients with malignant liver and lung lesions. PET data from 30 patients with abdominal or thoracic [(18)F]FDG-positive lesions (primary tumours or metastases) were included in this prospective study. The patients underwent a 10-min list-mode PET scan with a single bed position following a standard clinical whole-body [(18)F]FDG PET/CT scan. During this scan, one to three radioactive point sources (either (22)Na or (18)F, 50-100 kBq) in a dedicated holder were attached the patient's abdomen. The list mode data acquired were retrospectively analysed for respiratory signals using established data-driven gating approaches and additionally by tracking the motion of the point sources in sinogram space. Gated reconstructions were examined qualitatively, in terms of the amount of respiratory displacement and in respect of changes in local image intensity in the gated images. The presence of the external markers did not affect whole-body PET/CT image quality. Tracking of the markers led to characteristic respiratory curves in all patients. Applying these curves for gated reconstructions resulted in images in which motion was well resolved. Quantitatively, the performance of the external marker-based approach was similar to that of the best intrinsic data-driven methods. Overall, the gain in measured tumour uptake from the nongated to the gated images indicating successful removal of respiratory motion

Light-effect transistor (LET) with multiple independent gating controls for optical logic gates and optical amplification

Science.gov (United States)

Marmon, Jason; Rai, Satish; Wang, Kai; Zhou, Weilie; Zhang, Yong

The pathway for CMOS technology beyond the 5-nm technology node remains unclear for both physical and technological reasons. A new transistor paradigm is required. A LET (Marmon et. al., Front. Phys. 2016, 4, No. 8) offers electronic-optical hybridization at the component level, and is capable of continuing Moore's law to the quantum scale. A LET overcomes a FET's fabrication complexity, e.g., physical gate and doping, by employing optical gating and photoconductivity, while multiple independent, optical gates readily realize unique functionalities. We report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs, incorporating an M-S-M structure, show output and transfer characteristics resembling advanced FETs, e.g., on/off ratios up to 106 with a source-drain voltage of 1.43V, gate-power of 260nW, and a subthreshold swing of 0.3nW/decade (excluding losses). A LET has potential for high-switching (THz) speeds and extremely low-switching energies (aJ) in the ballistic transport region. Our work offers new electronic-optical integration strategies for high speed and low energy computing approaches, which could potentially be extended to other materials and devices.

100-nm gate lithography for double-gate transistors

Science.gov (United States)

Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

2001-09-01

The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

Multi detector computed tomography (MDCT) of the aortic root; ECG-gated verses non-ECG-gated examinations

International Nuclear Information System (INIS)

Kristiansen, Joanna; Guenther, Anne; Aalokken, Trond Mogens; Andersen, Rune

2011-01-01

Purpose: Motion artifacts may degrade a conventional CT examination of the ascending aorta and hinder accurate diagnosis. We quantitatively compared retrospectively electrocardiographic (ECG) -gated multi detector computed tomography (MDCT) with non-ECG-gated MDCT in order to demonstrate whether or not one of the methods should be preferred. Method: The study included seventeen patients with surgically reconstructed aortic root and reimplanted coronary arteries. All patients had undergone both non-gated MDCT and retrospectively ECG-gated MDCT employing a stringently modulated tube current with single phase image reconstruction. The incidence of motion artifacts in the left main coronary artery (LM), proximal right coronary artery (RCA), and aortic root and ascending aorta were rated using a four point scale. The effective dose for each scan was calculated and normalized to a 15 cm scan length. Statistical analysis of motion artifacts and radiation dose was performed using Wilcoxon matched pairs signed rank sum test. Results: A significant reduction in motion artifacts was found in all three vessels in images from the retrospectively ECG-gated scans (LM: P = 0.005, RCA: P = 0.015, aorta: P = 0.003). The mean normalized effective radiation dose was 3.69 mSv (±1.03) for the non-ECG-gated scans and 16.37 mSv (±2.53) for the ECG-gated scans. Conclusion: Retrospective ECG-gating with single phase reconstruction significantly reduces the incidence of motion artifacts in the aortic root and the proximal portion of the coronary arteries but at the expense of a fourfold increase in radiation dose.

Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

International Nuclear Information System (INIS)

Lei Tianfei; Luo Xiaorong; Ge Rui; Chen Xi; Wang Yuangang; Yao Guoliang; Jiang Yongheng; Zhang Bo; Li Zhaoji

2011-01-01

An ultra-low specific on-resistance (R on,sp ) silicon-on-insulator (SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed. The MOSFET features double gates and an oxide trench: the oxide trench is in the drift region, one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide. Firstly, the double gates reduce R on,sp by forming dual conduction channels. Secondly, the oxide trench not only folds the drift region, but also modulates the electric field, thereby reducing device pitch and increasing the breakdown voltage (BV). ABV of 93 V and a R on,sp of 51.8 mΩ·mm 2 is obtained for a DG trench MOSFET with a 3 μm half-cell pitch. Compared with a single-gate SOI MOSFET (SG MOSFET) and a single-gate SOI MOSFET with an oxide trench (SG trench MOSFET), the R on,sp of the DG trench MOSFET decreases by 63.3% and 33.8% at the same BV, respectively. (semiconductor devices)

Characteristics of dual-gate thin-film transistors for applications in digital radiology

International Nuclear Information System (INIS)

Waechter, D.; Huang, Z.; Zhao, W.; Blevis, I.; Rowlands, J.A.

1996-01-01

A large-area flat-panel detector for digital radiology is being developed. The detector uses an array of dual-gate thin-film transistors (TFTs) to read out X-ray-generated charge produced in an amorphous selenium (a-Se) layer. The TFTs use CdSe as the semiconductor and use the bottom gate for row selection. The top gate can be divided into a 'deliberate' gate, covering most of the channel length, and small 'parasitic' gates that consist of: overlap of source or drain metal over the top-gate oxide; and gap regions in the metal that are covered only by the a-Se. In this paper we present the properties of dual-gate TFTs and examine the effect of both the deliberate and parasitic gates on the detector operation. Various options for controlling the top-gate potential are analyzed and discussed. (author)

Developments of optical fast-gated imaging systems

International Nuclear Information System (INIS)

Koehler, H.A.; Kotecki, D.

1984-08-01

Several fast-gated imaging systems to measure ultra-fast single-transient data have been developed for time-resolved imaging of pulsed radiation sources. These systems were designed to achieve image recording times of 1 to 3 ms and dynamic ranges of >200:1 to produce large two-dimensional images (greater than or equal to 10 4 spatial points) of 1 to 2 ns exposure and small two-dimensional images (less than or equal to 200 spatial points) of less than or equal to 0.5 ns exposure. Both MCP intensified solid-state two-dimensional framing cameras and streak camera/solid-state camera systems were used; the framing camera system provides snap shots with high spatial resolution whereas the streak camera system provides for limited spatial points each with high temporal resolution. Applications of these systems include electron-beam, x-ray, gamma-ray, and neutron diagnostics. This report reviews the characteristics of the major components of fast-gated imaging systems developed at Lawrence Livermore National Laboratory. System performances are described in view of major experiments, and the diagnostic requirements of new experiments in atomic physics (x-ray lasers) and nuclear physics (fusion) are indicated

Multibit C_kNOT quantum gates via Rydberg blockade

DEFF Research Database (Denmark)

Isenhower, L.; Saffman, Mark; Mølmer, Klaus

2011-01-01

Long range Rydberg blockade interactions have the potential for efficient implementation of quantum gates between multiple atoms. Here we present and analyze a protocol for implementation of a k-atom controlled NOT (CkNOT) neutral atom gate. This gate can be implemented using sequential or simult......Long range Rydberg blockade interactions have the potential for efficient implementation of quantum gates between multiple atoms. Here we present and analyze a protocol for implementation of a k-atom controlled NOT (CkNOT) neutral atom gate. This gate can be implemented using sequential...... or simultaneous addressing of the control atoms which requires only 2k + 3 or 5 Rydberg π pulses respectively. A detailed error analysis relevant for implementations based on alkali atom Rydberg states is provided which shows that gate errors less than 10% are possible for k = 35....

Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

Science.gov (United States)

Kojima, Eiji; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Hosoi, Takuji; Watanabe, Heiji; Shiraishi, Kenji

2018-06-01

We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced gate leakage current and that VOVAl complexes in Al2O3 cause negative fixed charge. We revealed that the incorporation of N atoms into Al2O3 eliminates the VO defect levels, reducing the stress-induced gate leakage current. Moreover, this suppresses the formation of negatively charged VOVAl complexes. Therefore, AlON can reduce both stress-induced gate leakage current and negative fixed charge in wide-bandgap-semiconductor MOSFETs.

Estimation of the radiation exposure of a chest pain protocol with ECG-gating in dual-source computed tomography

International Nuclear Information System (INIS)

Ketelsen, Dominik; Luetkhoff, Marie H.; Thomas, Christoph; Werner, Matthias; Tsiflikas, Ilias; Reimann, Anja; Kopp, Andreas F.; Claussen, Claus D.; Heuschmid, Martin; Buchgeister, Markus; Burgstahler, Christof

2009-01-01

The aim of the study was to evaluate radiation exposure of a chest pain protocol with ECG-gated dual-source computed tomography (DSCT). An Alderson Rando phantom equipped with thermoluminescent dosimeters was used for dose measurements. Exposure was performed on a dual-source computed tomography system with a standard protocol for chest pain evaluation (120 kV, 320 mAs/rot) with different simulated heart rates (HRs). The dose of a standard chest CT examination (120 kV, 160 mAs) was also measured. Effective dose of the chest pain protocol was 19.3/21.9 mSv (male/female, HR 60), 17.9/20.4 mSv (male/female, HR 80) and 14.7/16.7 mSv (male/female, HR 100). Effective dose of a standard chest examination was 6.3 mSv (males) and 7.2 mSv (females). Radiation dose of the chest pain protocol increases significantly with a lower heart rate for both males (p = 0.040) and females (p = 0.044). The average radiation dose of a standard chest CT examination is about 36.5% that of a CT examination performed for chest pain. Using DSCT, the evaluated chest pain protocol revealed a higher radiation exposure compared with standard chest CT. Furthermore, HRs markedly influenced the dose exposure when using the ECG-gated chest pain protocol. (orig.)

Reduction of the estimated radiation dose and associated patient risk with prospective ECG-gated 256-slice CT coronary angiography

International Nuclear Information System (INIS)

Efstathopoulos, E P; Kelekis, N L; Pantos, I; Brountzos, E; Argentos, S; Grebac, J; Ziaka, D; Seimenis, I; Katritsis, D G

2009-01-01

Computed tomography (CT) coronary angiography has been widely used since the introduction of 64-slice scanners and dual-source CT technology, but high radiation doses have been reported. Prospective ECG-gating using a 'step-and-shoot' axial scanning protocol has been shown to reduce radiation exposure effectively while maintaining diagnostic accuracy. 256-slice scanners with 80 mm detector coverage have been currently introduced into practice, but their impact on radiation exposure has not been adequately studied. The aim of this study was to assess radiation doses associated with CT coronary angiography using a 256-slice CT scanner. Radiation doses were estimated for 25 patients scanned with either prospective or retrospective ECG-gating. Image quality was assessed objectively in terms of mean CT attenuation at selected regions of interest on axial coronary images and subjectively by coronary segment quality scoring. It was found that radiation doses associated with prospective ECG-gating were significantly lower than retrospective ECG-gating (3.2 ± 0.6 mSv versus 13.4 ± 2.7 mSv). Consequently, the radiogenic fatal cancer risk for the patient is much lower with prospective gating (0.0176% versus 0.0737%). No statistically significant differences in image quality were observed between the two scanning protocols for both objective and subjective quality assessments. Therefore, prospective ECG-gating using a 'step-and-shoot' protocol that covers the cardiac anatomy in two axial acquisitions effectively reduces radiation doses in 256-slice CT coronary angiography without compromising image quality.

Design of acoustic logging signal source of imitation based on field programmable gate array

International Nuclear Information System (INIS)

Zhang, K; Ju, X D; Lu, J Q; Men, B Y

2014-01-01

An acoustic logging signal source of imitation is designed and realized, based on the Field Programmable Gate Array (FPGA), to improve the efficiency of examining and repairing acoustic logging tools during research and field application, and to inspect and verify acoustic receiving circuits and corresponding algorithms. The design of this signal source contains hardware design and software design,and the hardware design uses an FPGA as the control core. Four signals are made first by reading the Random Access Memory (RAM) data which are inside the FPGA, then dealing with the data by digital to analog conversion, amplification, smoothing and so on. Software design uses VHDL, a kind of hardware description language, to program the FPGA. Experiments illustrate that the ratio of signal to noise for the signal source is high, the waveforms are stable, and also its functions of amplitude adjustment, frequency adjustment and delay adjustment are in accord with the characteristics of real acoustic logging waveforms. These adjustments can be used to imitate influences on sonic logging received waveforms caused by many kinds of factors such as spacing and span of acoustic tools, sonic speeds of different layers and fluids, and acoustic attenuations of different cementation planes. (paper)

Reducing the risk from radioactive sources

International Nuclear Information System (INIS)

MacKenzie, C.

2006-01-01

Each year the IAEA receives reports of serious injuries or deaths due to misuse or accidents involving sealed radioactive sources. Sealed radioactive sources are used widely in medicine, industry, and agriculture - by doctors to treat cancer, by radiographers to check welds in pipelines, or by specialists to irradiate food to prevent it from spoiling, for example. If these sources are lost or improperly discarded, a serious accident may result. In addition, the security of sealed sources has become a growing concern, particularly the potential that such a source could be used as a radioactive dispersal device or 'dirty bomb'. Preventing the loss or theft of sealed radioactive sources reduces both the risk of accidents and the risk that such sources could become an instrument of misuse. In most countries, radioactive materials and activities that produce radiation are regulated. Those working with sealed radioactive sources are required not just to have proper credentials, but also the needed training and support to deal with unexpected circumstances that may arise when a source is used. Despite these measures, accidents involving sealed sources continue to be reported to the IAEA. Among its many activities to improve the safety and security of sealed sources, the IAEA has been investigating the root causes of major accidents since the 1980s and publishing the findings so that others can learn from them. This information needs to be in the hands of those whose actions and decisions can reduce accidents by preventing a lost source from making it's way into scrap metal. The IAEA has also developed an international catalogue of sealed radioactive sources, and provides assistance to countries to safely contain sources no longer in use. To raise awareness, a Sealed Radioactive Sources Toolkit was issued that focuses on the long-term issues in safely and securely managing radioactive sealed sources. The target audiences are government agencies, radioactive sealed source

A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor

International Nuclear Information System (INIS)

Cui Lei; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Wang Cui-Mei; Jiang Li-Juan; Feng Chun; Yin Hai-Bo; Gong Jia-Min; Li Bai-Quan; Wang Zhan-Guo

2015-01-01

A novel multi-finger gate high electron mobility transistor (HEMT) is designed to reduce the peak electric field value at the drain-side gate edge when the device is at off-state. The effective gate length (L_e_f_f) of the multi-finger gate device is smaller than that of the field plate gate device. In this work, field plate gate, five-finger gate and ten-finger gate devices are simulated. The results of the simulation indicate that the multi-finger gate device has a lower peak value than the device with the gate field plate. Moreover, this value would be further reduced when the number of gate fingers is increased. In addition, it has the potential to make the HEMT work in a higher frequency since it has a lower effective length of gate. (paper)

Hybrid Toffoli gate on photons and quantum spins.

Science.gov (United States)

Luo, Ming-Xing; Ma, Song-Ya; Chen, Xiu-Bo; Wang, Xiaojun

2015-11-16

Quantum computation offers potential advantages in solving a number of interesting and difficult problems. Several controlled logic gates, the elemental building blocks of quantum computer, have been realized with various physical systems. A general technique was recently proposed that significantly reduces the realization complexity of multiple-control logic gates by harnessing multi-level information carriers. We present implementations of a key quantum circuit: the three-qubit Toffoli gate. By exploring the optical selection rules of one-sided optical microcavities, a Toffoli gate may be realized on all combinations of photon and quantum spins in the QD-cavity. The three general controlled-NOT gates are involved using an auxiliary photon with two degrees of freedom. Our results show that photons and quantum spins may be used alternatively in quantum information processing.

Gating-ML: XML-based gating descriptions in flow cytometry.

Science.gov (United States)

Spidlen, Josef; Leif, Robert C; Moore, Wayne; Roederer, Mario; Brinkman, Ryan R

2008-12-01

The lack of software interoperability with respect to gating due to lack of a standardized mechanism for data exchange has traditionally been a bottleneck, preventing reproducibility of flow cytometry (FCM) data analysis and the usage of multiple analytical tools. To facilitate interoperability among FCM data analysis tools, members of the International Society for the Advancement of Cytometry (ISAC) Data Standards Task Force (DSTF) have developed an XML-based mechanism to formally describe gates (Gating-ML). Gating-ML, an open specification for encoding gating, data transformations and compensation, has been adopted by the ISAC DSTF as a Candidate Recommendation. Gating-ML can facilitate exchange of gating descriptions the same way that FCS facilitated for exchange of raw FCM data. Its adoption will open new collaborative opportunities as well as possibilities for advanced analyses and methods development. The ISAC DSTF is satisfied that the standard addresses the requirements for a gating exchange standard.

Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Science.gov (United States)

Ferain, I.; Duffy, R.; Collaert, N.; van Dal, M. J. H.; Pawlak, B. J.; O'Sullivan, B.; Witters, L.; Rooyackers, R.; Conard, T.; Popovici, M.; van Elshocht, S.; Kaiser, M.; Weemaes, R. G. R.; Swerts, J.; Jurczak, M.; Lander, R. J. P.; De Meyer, K.

2009-07-01

At short gate lengths, narrow multiple-gate FETs (MuGFETs) are known to offer superior short channel effect (SCE) control than their bulk Si counterpart [Doyle BS et al. High performance fully-depleted tri-gate CMOS transistors. IEEE Electron Dev Lett 2003;24(4):263-5, van Dal MJH et al. Highly manufacturable FinFETs with sub-10 nm fin width and high aspect ratio fabricated with immersion lithography. In: VLSI Symp Tech Dig; 2007. p. 110-1 [1,2

Cluster computing software for GATE simulations

International Nuclear Information System (INIS)

Beenhouwer, Jan de; Staelens, Steven; Kruecker, Dirk; Ferrer, Ludovic; D'Asseler, Yves; Lemahieu, Ignace; Rannou, Fernando R.

2007-01-01

Geometry and tracking (GEANT4) is a Monte Carlo package designed for high energy physics experiments. It is used as the basis layer for Monte Carlo simulations of nuclear medicine acquisition systems in GEANT4 Application for Tomographic Emission (GATE). GATE allows the user to realistically model experiments using accurate physics models and time synchronization for detector movement through a script language contained in a macro file. The downside of this high accuracy is long computation time. This paper describes a platform independent computing approach for running GATE simulations on a cluster of computers in order to reduce the overall simulation time. Our software automatically creates fully resolved, nonparametrized macros accompanied with an on-the-fly generated cluster specific submit file used to launch the simulations. The scalability of GATE simulations on a cluster is investigated for two imaging modalities, positron emission tomography (PET) and single photon emission computed tomography (SPECT). Due to a higher sensitivity, PET simulations are characterized by relatively high data output rates that create rather large output files. SPECT simulations, on the other hand, have lower data output rates but require a long collimator setup time. Both of these characteristics hamper scalability as a function of the number of CPUs. The scalability of PET simulations is improved here by the development of a fast output merger. The scalability of SPECT simulations is improved by greatly reducing the collimator setup time. Accordingly, these two new developments result in higher scalability for both PET and SPECT simulations and reduce the computation time to more practical values

Active gated imaging in driver assistance system

Science.gov (United States)

Grauer, Yoav

2014-04-01

In this paper, we shall present the active gated imaging system (AGIS) in relation to the automotive field. AGIS is based on a fast-gated camera and pulsed illuminator, synchronized in the time domain to record images of a certain range of interest. A dedicated gated CMOS imager sensor and near infra-red (NIR) pulsed laser illuminator, is presented in this paper to provide active gated technology. In recent years, we have developed these key components and learned the system parameters, which are most beneficial to nighttime (in all weather conditions) driving in terms of field of view, illumination profile, resolution, and processing power. We shall present our approach of a camera-based advanced driver assistance systems (ADAS) named BrightEye™, which makes use of the AGIS technology in the automotive field.

Image-guided adaptive gating of lung cancer radiotherapy: a computer simulation study

Energy Technology Data Exchange (ETDEWEB)

Aristophanous, Michalis; Rottmann, Joerg; Park, Sang-June; Berbeco, Ross I [Department of Radiation Oncology, Brigham and Women' s Hospital, Dana Farber Cancer Institute and Harvard Medical School, Boston, MA (United States); Nishioka, Seiko [Department of Radiology, NTT Hospital, Sapporo (Japan); Shirato, Hiroki, E-mail: maristophanous@lroc.harvard.ed [Department of Radiation Medicine, Hokkaido University School of Medicine, Sapporo (Japan)

2010-08-07

The purpose of this study is to investigate the effect that image-guided adaptation of the gating window during treatment could have on the residual tumor motion, by simulating different gated radiotherapy techniques. There are three separate components of this simulation: (1) the 'Hokkaido Data', which are previously measured 3D data of lung tumor motion tracks and the corresponding 1D respiratory signals obtained during the entire ungated radiotherapy treatments of eight patients, (2) the respiratory gating protocol at our institution and the imaging performed under that protocol and (3) the actual simulation in which the Hokkaido Data are used to select tumor position information that could have been collected based on the imaging performed under our gating protocol. We simulated treatments with a fixed gating window and a gating window that is updated during treatment. The patient data were divided into different fractions, each with continuous acquisitions longer than 2 min. In accordance to the imaging performed under our gating protocol, we assume that we have tumor position information for the first 15 s of treatment, obtained from kV fluoroscopy, and for the rest of the fractions the tumor position is only available during the beam-on time from MV imaging. The gating window was set according to the information obtained from the first 15 s such that the residual motion was less than 3 mm. For the fixed gating window technique the gate remained the same for the entire treatment, while for the adaptive technique the range of the tumor motion during beam-on time was measured and used to adapt the gating window to keep the residual motion below 3 mm. The algorithm used to adapt the gating window is described. The residual tumor motion inside the gating window was reduced on average by 24% for the patients with regular breathing patterns and the difference was statistically significant (p-value = 0.01). The magnitude of the residual tumor motion

Gate valve performance prediction

International Nuclear Information System (INIS)

Harrison, D.H.; Damerell, P.S.; Wang, J.K.; Kalsi, M.S.; Wolfe, K.J.

1994-01-01

The Electric Power Research Institute is carrying out a program to improve the performance prediction methods for motor-operated valves. As part of this program, an analytical method to predict the stem thrust required to stroke a gate valve has been developed and has been assessed against data from gate valve tests. The method accounts for the loads applied to the disc by fluid flow and for the detailed mechanical interaction of the stem, disc, guides, and seats. To support development of the method, two separate-effects test programs were carried out. One test program determined friction coefficients for contacts between gate valve parts by using material specimens in controlled environments. The other test program investigated the interaction of the stem, disc, guides, and seat using a special fixture with full-sized gate valve parts. The method has been assessed against flow-loop and in-plant test data. These tests include valve sizes from 3 to 18 in. and cover a considerable range of flow, temperature, and differential pressure. Stem thrust predictions for the method bound measured results. In some cases, the bounding predictions are substantially higher than the stem loads required for valve operation, as a result of the bounding nature of the friction coefficients in the method

Statistical analysis of target motion in gated lung stereotactic body radiation therapy

International Nuclear Information System (INIS)

Zhao Bo; Yang Yong; Li Tianfang; Li Xiang; Heron, Dwight E; Huq, M Saiful

2011-01-01

An external surrogate-based respiratory gating technique is a useful method to reduce target margins for the treatment of a moving lung tumor. The success of this technique relies on a good correlation between the motion of the external markers and the internal tumor as well as the repeatability of the respiratory motion. In gated lung stereotactic body radiation therapy (SBRT), the treatment time for each fraction could exceed 30 min due to large fractional dose. Tumor motion may experience pattern changes such as baseline shift during such extended treatment time. The purpose of this study is to analyze tumor motion traces in actual treatment situations and to evaluate the effect of the target baseline shift in gated lung SBRT treatment. Real-time motion data for both the external markers and tumors from 51 lung SBRT treatments with Cyberknife Synchrony technology were analyzed in this study. The treatment time is typically greater than 30 min. The baseline shift was calculated with a rolling average window equivalent to ∼20 s and subtracted from that at the beginning. The magnitude of the baseline shift and its relationship with treatment time were investigated. Phase gating simulation was retrospectively performed on 12 carefully selected treatments with respiratory amplitude larger than 5 mm and regular phases. A customized gating window was defined for each individual treatment. It was found that the baseline shifts are specific to each patient and each fraction. Statistical analysis revealed that more than 69% treatments exhibited increased baseline shifts with the lapse of treatment time. The magnitude of the baseline shift could reach 5.3 mm during a 30 min treatment. Gating simulation showed that tumor excursion was caused mainly by the uncertainties in phase gating simulation and baseline shift, the latter being the primary factor. With a 5 mm gating window, 2 out of 12 treatments in the study group showed significant tumor excursion. Baseline shifts

Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes

Science.gov (United States)

Alivov, Yahya; Funke, Hans; Nagpal, Prashant

2015-07-01

Rapid miniaturization of electronic devices down to the nanoscale, according to Moore’s law, has led to some undesirable effects like high leakage current in transistors, which can offset additional benefits from scaling down. Development of three-dimensional transistors, by spatial extension in the third dimension, has allowed higher contact area with a gate electrode and better control over conductivity in the semiconductor channel. However, these devices do not utilize the large surface area and interfaces for new electronic functionality. Here, we demonstrate air gating and chemical gating in hollow semiconductor nanotube devices and highlight the potential for development of novel transistors that can be modulated using channel bias, gate voltage, chemical composition, and concentration. Using chemical gating, we reversibly altered the conductivity of nanoscaled semiconductor nanotubes (10-500 nm TiO2 nanotubes) by six orders of magnitude, with a tunable rectification factor (ON/OFF ratio) ranging from 1-106. While demonstrated air- and chemical-gating speeds were slow here (˜seconds) due to the mechanical-evacuation rate and size of our chamber, the small nanoscale volume of these hollow semiconductors can enable much higher switching speeds, limited by the rate of adsorption/desorption of molecules at semiconductor interfaces. These chemical-gating effects are completely reversible, additive between different chemical compositions, and can enable semiconductor nanoelectronic devices for ‘chemical transistors’, ‘chemical diodes’, and very high-efficiency sensing applications.

High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts.

Science.gov (United States)

Burchhart, T; Zeiner, C; Hyun, Y J; Lugstein, A; Hochleitner, G; Bertagnolli, E

2010-10-29

Ge nanowires (NWs) about 2 µm long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH(4) as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu(3)Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga(+) implantation leading to a high performance Ω-gated Ge-NW MOSFET with saturation currents of a few microamperes.

Double-gate junctionless transistor model including short-channel effects

International Nuclear Information System (INIS)

Paz, B C; Pavanello, M A; Ávila-Herrera, F; Cerdeira, A

2015-01-01

This work presents a physically based model for double-gate junctionless transistors (JLTs), continuous in all operation regimes. To describe short-channel transistors, short-channel effects (SCEs), such as increase of the channel potential due to drain bias, carrier velocity saturation and mobility degradation due to vertical and longitudinal electric fields, are included in a previous model developed for long-channel double-gate JLTs. To validate the model, an analysis is made by using three-dimensional numerical simulations performed in a Sentaurus Device Simulator from Synopsys. Different doping concentrations, channel widths and channel lengths are considered in this work. Besides that, the series resistance influence is numerically included and validated for a wide range of source and drain extensions. In order to check if the SCEs are appropriately described, besides drain current, transconductance and output conductance characteristics, the following parameters are analyzed to demonstrate the good agreement between model and simulation and the SCEs occurrence in this technology: threshold voltage (V TH ), subthreshold slope (S) and drain induced barrier lowering. (paper)

Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects

International Nuclear Information System (INIS)

Gupta, Santosh K.; Baishya, Srimanta

2013-01-01

A physically based analytical model for surface potential and threshold voltage including the fringing gate capacitances in cylindrical surround gate (CSG) MOSFETs has been developed. Based on this a subthreshold drain current model has also been derived. This model first computes the charge induced in the drain/source region due to the fringing capacitances and considers an effective charge distribution in the cylindrically extended source/drain region for the development of a simple and compact model. The fringing gate capacitances taken into account are outer fringe capacitance, inner fringe capacitance, overlap capacitance, and sidewall capacitance. The model has been verified with the data extracted from 3D TCAD simulations of CSG MOSFETs and was found to be working satisfactorily. (semiconductor devices)

An Analytical Threshold Voltage Model of Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFETs with Back-Gate Control

Science.gov (United States)

Saramekala, Gopi Krishna; Tiwari, Pramod Kumar

2016-10-01

This paper presents an analytical threshold voltage model for back-gated fully depleted (FD), recessed-source drain silicon-on-insulator metal-oxide-semiconductor field-effect transistors (MOSFETs). Analytical surface potential models have been developed at front and back surfaces of the channel by solving the two-dimensional (2-D) Poisson's equation in the channel region with appropriate boundary conditions assuming a parabolic potential profile in the transverse direction of the channel. The strong inversion criterion is applied to the front surface potential as well as on the back one in order to find two separate threshold voltages for front and back channels of the device, respectively. The device threshold voltage has been assumed to be associated with the surface that offers a lower threshold voltage. The developed model was analyzed extensively for a variety of device geometry parameters like the oxide and silicon channel thicknesses, the thickness of the source/drain extension in the buried oxide, and the applied bias voltages with back-gate control. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained from ATLAS™, a 2-D device simulator from SILVACO.

Characterisation and application of a laser-based hard x-ray source

International Nuclear Information System (INIS)

Graetz, M.

1998-11-01

Hard X-rays are generated by focusing 110 fs laser pulses with intensities of about 1017 W/cm 2 onto solid metal targets. Characteristic properties of this X-ray source are the small source size, the short pulse duration and the high peak flux. The aim of the present work was to characterise this X-ray source and to demonstrate possible applications. A comparison with other X-ray sources and conventional imaging techniques is made. Characterising measurements were performed, including source size, emission spectrum, temporal behaviour, source stability and the influence of various laser parameters. The emission spectrum was measured using both energy-dispersive solid-state detectors and wavelength-dispersive crystal spectroscopy. The conversion efficiency from laser light to X-ray radiation was measured for different target materials. The laser ablation from different targets was studied. The feasibility of special imaging techniques, e.g. differential imaging and time-gated imaging, was investigated both theoretically and experimentally. Differential imaging allows for selective imaging of contrast agents, while time-gated imaging can reduce the influence of scattered radiation in X-ray imaging. Time-gated imaging was demonstrated in different imaging geometries, both for planar imaging and computed tomography imaging. Reasonable agreement between theoretically calculated values and experimental results was obtained

Characterisation and application of a laser-based hard x-ray source

Energy Technology Data Exchange (ETDEWEB)

Graetz, M

1998-11-01

Hard X-rays are generated by focusing 110 fs laser pulses with intensities of about 1017 W/cm{sup 2} onto solid metal targets. Characteristic properties of this X-ray source are the small source size, the short pulse duration and the high peak flux. The aim of the present work was to characterise this X-ray source and to demonstrate possible applications. A comparison with other X-ray sources and conventional imaging techniques is made. Characterising measurements were performed, including source size, emission spectrum, temporal behaviour, source stability and the influence of various laser parameters. The emission spectrum was measured using both energy-dispersive solid-state detectors and wavelength-dispersive crystal spectroscopy. The conversion efficiency from laser light to X-ray radiation was measured for different target materials. The laser ablation from different targets was studied. The feasibility of special imaging techniques, e.g. differential imaging and time-gated imaging, was investigated both theoretically and experimentally. Differential imaging allows for selective imaging of contrast agents, while time-gated imaging can reduce the influence of scattered radiation in X-ray imaging. Time-gated imaging was demonstrated in different imaging geometries, both for planar imaging and computed tomography imaging. Reasonable agreement between theoretically calculated values and experimental results was obtained 120 refs, figs, tabs

Noise Gating Solar Images

Science.gov (United States)

DeForest, Craig; Seaton, Daniel B.; Darnell, John A.

2017-08-01

I present and demonstrate a new, general purpose post-processing technique, "3D noise gating", that can reduce image noise by an order of magnitude or more without effective loss of spatial or temporal resolution in typical solar applications.Nearly all scientific images are, ultimately, limited by noise. Noise can be direct Poisson "shot noise" from photon counting effects, or introduced by other means such as detector read noise. Noise is typically represented as a random variable (perhaps with location- or image-dependent characteristics) that is sampled once per pixel or once per resolution element of an image sequence. Noise limits many aspects of image analysis, including photometry, spatiotemporal resolution, feature identification, morphology extraction, and background modeling and separation.Identifying and separating noise from image signal is difficult. The common practice of blurring in space and/or time works because most image "signal" is concentrated in the low Fourier components of an image, while noise is evenly distributed. Blurring in space and/or time attenuates the high spatial and temporal frequencies, reducing noise at the expense of also attenuating image detail. Noise-gating exploits the same property -- "coherence" -- that we use to identify features in images, to separate image features from noise.Processing image sequences through 3-D noise gating results in spectacular (more than 10x) improvements in signal-to-noise ratio, while not blurring bright, resolved features in either space or time. This improves most types of image analysis, including feature identification, time sequence extraction, absolute and relative photometry (including differential emission measure analysis), feature tracking, computer vision, correlation tracking, background modeling, cross-scale analysis, visual display/presentation, and image compression.I will introduce noise gating, describe the method, and show examples from several instruments (including SDO

Influence of Respiratory Gating, Image Filtering, and Animal Positioning on High-Resolution Electrocardiography-Gated Murine Cardiac Single-Photon Emission Computed Tomography

Directory of Open Access Journals (Sweden)

Chao Wu

2015-01-01

Full Text Available Cardiac parameters obtained from single-photon emission computed tomographic (SPECT images can be affected by respiratory motion, image filtering, and animal positioning. We investigated the influence of these factors on ultra-high-resolution murine myocardial perfusion SPECT. Five mice were injected with 99m technetium (99mTc-tetrofosmin, and each was scanned in supine and prone positions in a U-SPECT-II scanner with respiratory and electrocardiographic (ECG gating. ECG-gated SPECT images were created without applying respiratory motion correction or with two different respiratory motion correction strategies. The images were filtered with a range of three-dimensional gaussian kernels, after which end-diastolic volumes (EDVs, end-systolic volumes (ESVs, and left ventricular ejection fractions were calculated. No significant differences in the measured cardiac parameters were detected when any strategy to reduce or correct for respiratory motion was applied, whereas big differences (> 5% in EDV and ESV were found with regard to different positioning of animals. A linear relationship (p < .001 was found between the EDV or ESV and the kernel size of the gaussian filter. In short, respiratory gating did not significantly affect the cardiac parameters of mice obtained with ultra-high-resolution SPECT, whereas the position of the animals and the image filters should be the same in a comparative study with multiple scans to avoid systematic differences in measured cardiac parameters.

Impact of sea level rise on tide gate function.

Science.gov (United States)

Walsh, Sean; Miskewitz, Robert

2013-01-01

Sea level rise resulting from climate change and land subsidence is expected to severely impact the duration and associated damage resulting from flooding events in tidal communities. These communities must continuously invest resources for the maintenance of existing structures and installation of new flood prevention infrastructure. Tide gates are a common flood prevention structure for low-lying communities in the tidal zone. Tide gates close during incoming tides to prevent inundation from downstream water propagating inland and open during outgoing tides to drain upland areas. Higher downstream mean sea level elevations reduce the effectiveness of tide gates by impacting the hydraulics of the system. This project developed a HEC-RAS and HEC-HMS model of an existing tide gate structure and its upland drainage area in the New Jersey Meadowlands to simulate the impact of rising mean sea level elevations on the tide gate's ability to prevent upstream flooding. Model predictions indicate that sea level rise will reduce the tide gate effectiveness resulting in longer lasting and deeper flood events. The results indicate that there is a critical point in the sea level elevation for this local area, beyond which flooding scenarios become dramatically worse and would have a significantly negative impact on the standard of living and ability to do business in one of the most densely populated areas of America.

Estimation of radiation exposure of retrospective gated and prospective triggered 128-slice triple-rule-out CT angiography

Energy Technology Data Exchange (ETDEWEB)

Ketelsen, Dominik; Fenchel, Michael; Thomas, Christoph; Boehringer, Nadine; Tsiflikas, Ilias; Kaempf, Michael; Claussen, Claus D; Heuschmid, Martin (Dept. of Diagnostic and Interventional Radiology, Univ. Hospital Tuebingen, Tuebingen (Germany)), email: dominik.ketelsen@med.uni-tuebingen.de; Buchgeister, Markus (Depts. of Radiotherapy and Radiooncology, Univ. Hospital Tuebingen, Tuebingen (Germany))

2011-09-15

Background: CT has become an important role in the differential diagnosis of acute chest pain to exclude an aortic dissection, pulmonary embolism and acute coronary artery syndrome. However, the additional radiation exposure is a cause of concern and dose saving strategies should be applied, if possible. Purpose: To estimate effective dose of retrospective gated and prospective ECG-triggered triple-rule-out computed tomography angiography (TRO-CTA). Material and Methods: An Alderson-Rando-phantom equipped with thermoluminescent dosimeters was used for dose measurements. Exposure was performed on a 128-slice single source scanner. The following scan parameters were used (retrospective ECG-gated): 120 kV, 190 mAs/rot., collimation 128x0.6 mm, rotation time 0.3 s. Protocols with a simulated heart rate (HR) of 60 and 100 bpm were performed using the standard ECG-pulsing as well as MinDose. Additionally, a prospective triggered TRO-CTA was acquired (HR 60 bpm). Results: The estimated effective dose of retrospective ECG-gated TRO-CTA ranged from 7.4-13.4 mSv and from 10.1-17.5 mSv for men and women, respectively. Due to radiosensitive breast tissue, women received a significant increased effective dose of up to 64.7% +- 0.03% (p = 0.028) compared to men. MinDose reduces radiation exposure of up to 33.0% +- 6.5% in comparison to standard ECG-pulsing (p < 0.001). The effective dose increased significantly with lower heart rates (p < 0.001). Prospective ECG-triggered TRO-CTA showed an effective dose of 5.9 mSv and 8.2 mSv for men and women, respectively. Compared to retrospective ECG-gated TRO-CTA a significant dose reduction was observed (p < 0.001). Conclusion: Due to the significant different dose exposure, scan protocols should be specifically adapted in a patient- and problem-oriented manner

Estimation of radiation exposure of retrospective gated and prospective triggered 128-slice triple-rule-out CT angiography

International Nuclear Information System (INIS)

Ketelsen, Dominik; Fenchel, Michael; Thomas, Christoph; Boehringer, Nadine; Tsiflikas, Ilias; Kaempf, Michael; Claussen, Claus D; Heuschmid, Martin; Buchgeister, Markus

2011-01-01

Background: CT has become an important role in the differential diagnosis of acute chest pain to exclude an aortic dissection, pulmonary embolism and acute coronary artery syndrome. However, the additional radiation exposure is a cause of concern and dose saving strategies should be applied, if possible. Purpose: To estimate effective dose of retrospective gated and prospective ECG-triggered triple-rule-out computed tomography angiography (TRO-CTA). Material and Methods: An Alderson-Rando-phantom equipped with thermoluminescent dosimeters was used for dose measurements. Exposure was performed on a 128-slice single source scanner. The following scan parameters were used (retrospective ECG-gated): 120 kV, 190 mAs/rot., collimation 128x0.6 mm, rotation time 0.3 s. Protocols with a simulated heart rate (HR) of 60 and 100 bpm were performed using the standard ECG-pulsing as well as MinDose. Additionally, a prospective triggered TRO-CTA was acquired (HR 60 bpm). Results: The estimated effective dose of retrospective ECG-gated TRO-CTA ranged from 7.4-13.4 mSv and from 10.1-17.5 mSv for men and women, respectively. Due to radiosensitive breast tissue, women received a significant increased effective dose of up to 64.7% ± 0.03% (p = 0.028) compared to men. MinDose reduces radiation exposure of up to 33.0% ± 6.5% in comparison to standard ECG-pulsing (p < 0.001). The effective dose increased significantly with lower heart rates (p < 0.001). Prospective ECG-triggered TRO-CTA showed an effective dose of 5.9 mSv and 8.2 mSv for men and women, respectively. Compared to retrospective ECG-gated TRO-CTA a significant dose reduction was observed (p < 0.001). Conclusion: Due to the significant different dose exposure, scan protocols should be specifically adapted in a patient- and problem-oriented manner

Poly-Si gate engineering for advanced CMOS transistors by germanium implantation

International Nuclear Information System (INIS)

Bourdon, H.; Juhel, M.; Oudet, B.; Breil, N.; Lenoble, D.

2005-01-01

Standard gate materials are compared to Ge implanted poly-Si and deposited poly-SiGe. It is demonstrated in this paper that the electrical resistance of the gate is significantly reduced via the use of poly-SiGe (from 30% to 40% decrease in resistance). Similarly, we show via specific optimization that localized Ge implantation is also suitable to reduce gate resistance. Physical characterizations are performed to determine the 'root' causes at the origin of these improvements. In line with future publications showing strong benefits on CMOS device performance, grain size effects seem to be the main mechanisms explaining the measured improvement

Gated CT imaging using a free-breathing respiration signal from flow-volume spirometry

International Nuclear Information System (INIS)

D'Souza, Warren D.; Kwok, Young; Deyoung, Chad; Zacharapoulos, Nicholas; Pepelea, Mark; Klahr, Paul; Yu, Cedric X.

2005-01-01

Respiration-induced tumor motion is known to cause artifacts on free-breathing spiral CT images used in treatment planning. This leads to inaccurate delineation of target volumes on planning CT images. Flow-volume spirometry has been used previously for breath-holds during CT scans and radiation treatments using the active breathing control (ABC) system. We have developed a prototype by extending the flow-volume spirometer device to obtain gated CT scans using a PQ 5000 single-slice CT scanner. To test our prototype, we designed motion phantoms to compare image quality obtained with and without gated CT scan acquisition. Spiral and axial (nongated and gated) CT scans were obtained of phantoms with motion periods of 3-5 s and amplitudes of 0.5-2 cm. Errors observed in the volume estimate of these structures were as much as 30% with moving phantoms during CT simulation. Application of motion-gated CT with active breathing control reduced these errors to within 5%. Motion-gated CT was then implemented in patients and the results are presented for two clinical cases: lung and abdomen. In each case, gated scans were acquired at end-inhalation, end-exhalation in addition to a conventional free-breathing (nongated) scan. The gated CT scans revealed reduced artifacts compared with the conventional free-breathing scan. Differences of up to 20% in the volume of the structures were observed between gated and free-breathing scans. A comparison of the overlap of structures between the gated and free-breathing scans revealed misalignment of the structures. These results demonstrate the ability of flow-volume spirometry to reduce errors in target volumes via gating during CT imaging

Scaling Trapped Ion Quantum Computers Using Fast Gates and Microtraps

Science.gov (United States)

Ratcliffe, Alexander K.; Taylor, Richard L.; Hope, Joseph J.; Carvalho, André R. R.

2018-06-01

Most attempts to produce a scalable quantum information processing platform based on ion traps have focused on the shuttling of ions in segmented traps. We show that an architecture based on an array of microtraps with fast gates will outperform architectures based on ion shuttling. This system requires higher power lasers but does not require the manipulation of potentials or shuttling of ions. This improves optical access, reduces the complexity of the trap, and reduces the number of conductive surfaces close to the ions. The use of fast gates also removes limitations on the gate time. Error rates of 10-5 are shown to be possible with 250 mW laser power and a trap separation of 100 μ m . The performance of the gates is shown to be robust to the limitations in the laser repetition rate and the presence of many ions in the trap array.

Dual-gate operation and carrier transport in SiGe p-n junction nanowires

Science.gov (United States)

Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

2017-11-01

We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

A new circuit technique for reduced leakage current in Deep Submicron CMOS technologies

Directory of Open Access Journals (Sweden)

A. Schmitz

2005-01-01

Full Text Available Modern CMOS processes in the Deep Submicron regime are restricted to supply voltages below 2 volts and further to account for the transistors' field strength limitations and to reduce the power per logic gate. To maintain the high switching performance, the threshold voltage must be scaled according with the supply voltage. However, this leads to an increased subthreshold current of the transistors in standby mode (VGS=0. Another source of leakage is gate current, which becomes significant for gate oxides of 3nm and below. We propose a Self-Biasing Virtual Rails (SBVR - CMOS technique which acts like an adaptive local supply voltage in case of standby mode. Most important sources of leakage currents are reduced by this technique. Moreover, SBVR-CMOS is capable of conserving stored information in sleep mode, which is vital for memory circuits. Memories are exposed to radiation causing soft errors. This well-known problem becomes even worse in standby mode of typical SRAMs, that have low driving performance to withstand alpha particle hits. In this paper, a 16-transistor SRAM cell is proposed, which combines the advantage of extremely low leakage currents with a very high soft error stability.

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Science.gov (United States)

Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

2015-01-01

Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

Voltage-gated proton channel is expressed on phagosomes

International Nuclear Information System (INIS)

Okochi, Yoshifumi; Sasaki, Mari; Iwasaki, Hirohide; Okamura, Yasushi

2009-01-01

Voltage-gated proton channel has been suggested to help NADPH oxidase activity during respiratory burst of phagocytes through its activities of compensating charge imbalance and regulation of pH. In phagocytes, robust production of reactive oxygen species occurs in closed membrane compartments, which are called phagosomes. However, direct evidence for the presence of voltage-gated proton channels in phagosome has been lacking. In this study, the expression of voltage-gated proton channels was studied by Western blot with the antibody specific to the voltage-sensor domain protein, VSOP/Hv1, that has recently been identified as the molecular correlate for the voltage-gated proton channel. Phagosomal membranes of neutrophils contain VSOP/Hv1 in accordance with subunits of NADPH oxidases, gp91, p22, p47 and p67. Superoxide anion production upon PMA activation was significantly reduced in neutrophils from VSOP/Hv1 knockout mice. These are consistent with the idea that voltage-gated proton channels help NADPH oxidase in phagocytes to produce reactive oxygen species.

Gated viewing and high-accuracy three-dimensional laser radar

DEFF Research Database (Denmark)

Busck, Jens; Heiselberg, Henning

2004-01-01

, a high PRF of 32 kHz, and a high-speed camera with gate times down to 200 ps and delay steps down to 100 ps. The electronics and the software also allow for gated viewing with automatic gain control versus range, whereby foreground backscatter can be suppressed. We describe our technique for the rapid...

Use of the GATE Monte Carlo package for dosimetry applications

Energy Technology Data Exchange (ETDEWEB)

Visvikis, D. [INSERM U650, LaTIM, University Hospital Medical School, F 29609 Brest (France)]. E-mail: Visvikis.Dimitris@univ-brest.fr; Bardies, M. [INSERM U601, CHU Nantes, F 44093 Nantes (France); Chiavassa, S. [INSERM U601, CHU Nantes, F 44093 Nantes (France); Danford, C. [Department of Medical Physics, MSKCC, New York (United States); Kirov, A. [Department of Medical Physics, MSKCC, New York (United States); Lamare, F. [INSERM U650, LaTIM, University Hospital Medical School, F 29609 Brest (France); Maigne, L. [Departement de Curietherapie-Radiotherapie, Centre Jean Perrin, F 63000 Clemont-Ferrand (France); Staelens, S. [UGent-ELIS, St-Pietersnieuwstraat, 41, B 9000 Gent (Belgium); Taschereau, R. [CRUMP Institute for Molecular Imaging, UCLA, Los Angeles (United States)

2006-12-20

One of the roles for Monte Carlo (MC) simulation studies is in the area of dosimetry. A number of different codes dedicated to dosimetry applications are available and widely used today, such as MCNP, EGSnrc and PTRAN. However, such codes do not easily facilitate the description of complicated 3D sources or emission tomography systems and associated data flow, which may be useful in different dosimetry application domains. Such problems can be overcome by the use of specific MC codes such as GATE (GEANT4 Application to Tomographic Emission), which is based on Geant4 libraries, providing a scripting interface with a number of advantages for the simulation of SPECT and PET systems. Despite this potential, its major disadvantage is in terms of efficiency involving long execution times for applications such as dosimetry. The strong points and disadvantages of GATE in comparison to other dosimetry specific codes are discussed and illustrated in terms of accuracy, efficiency and flexibility. A number of features, such as the use of voxelised and moving sources, as well as developments such as advanced visualization tools and the development of dose estimation maps allowing GATE to be used for dosimetry applications are presented. In addition, different examples from dosimetry applications with GATE are given. Finally, future directions with respect to the use of GATE for dosimetry applications are outlined.

COHERENTLY DEDISPERSED GATED IMAGING OF MILLISECOND PULSARS

International Nuclear Information System (INIS)

Roy, Jayanta; Bhattacharyya, Bhaswati

2013-01-01

Motivated by the need for rapid localization of newly discovered faint millisecond pulsars (MSPs), we have developed a coherently dedispersed gating correlator. This gating correlator accounts for the orbital motions of MSPs in binaries while folding the visibilities with a best-fit topocentric rotational model derived from a periodicity search in a simultaneously generated beamformer output. Unique applications of the gating correlator for sensitive interferometric studies of MSPs are illustrated using the Giant Metrewave Radio Telescope (GMRT) interferometric array. We could unambiguously localize five newly discovered Fermi MSPs in the on-off gated image plane with an accuracy of ±1''. Immediate knowledge of such a precise position enables the use of sensitive coherent beams of array telescopes for follow-up timing observations which substantially reduces the use of telescope time (∼20× for the GMRT). In addition, a precise a priori astrometric position reduces the effect of large covariances in the timing fit (with discovery position, pulsar period derivative, and an unknown binary model), which in-turn accelerates the convergence to the initial timing model. For example, while fitting with the precise a priori position (±1''), the timing model converges in about 100 days, accounting for the effect of covariance between the position and pulsar period derivative. Moreover, such accurate positions allow for rapid identification of pulsar counterparts at other wave bands. We also report a new methodology of in-beam phase calibration using the on-off gated image of the target pulsar, which provides optimal sensitivity of the coherent array removing possible temporal and spacial decoherences.

COHERENTLY DEDISPERSED GATED IMAGING OF MILLISECOND PULSARS

Energy Technology Data Exchange (ETDEWEB)

Roy, Jayanta; Bhattacharyya, Bhaswati [National Centre for Radio Astrophysics, Pune 411007 (India)

2013-03-10

Motivated by the need for rapid localization of newly discovered faint millisecond pulsars (MSPs), we have developed a coherently dedispersed gating correlator. This gating correlator accounts for the orbital motions of MSPs in binaries while folding the visibilities with a best-fit topocentric rotational model derived from a periodicity search in a simultaneously generated beamformer output. Unique applications of the gating correlator for sensitive interferometric studies of MSPs are illustrated using the Giant Metrewave Radio Telescope (GMRT) interferometric array. We could unambiguously localize five newly discovered Fermi MSPs in the on-off gated image plane with an accuracy of {+-}1''. Immediate knowledge of such a precise position enables the use of sensitive coherent beams of array telescopes for follow-up timing observations which substantially reduces the use of telescope time ({approx}20 Multiplication-Sign for the GMRT). In addition, a precise a priori astrometric position reduces the effect of large covariances in the timing fit (with discovery position, pulsar period derivative, and an unknown binary model), which in-turn accelerates the convergence to the initial timing model. For example, while fitting with the precise a priori position ({+-}1''), the timing model converges in about 100 days, accounting for the effect of covariance between the position and pulsar period derivative. Moreover, such accurate positions allow for rapid identification of pulsar counterparts at other wave bands. We also report a new methodology of in-beam phase calibration using the on-off gated image of the target pulsar, which provides optimal sensitivity of the coherent array removing possible temporal and spacial decoherences.

Low operating voltage n-channel organic field effect transistors using lithium fluoride/PMMA bilayer gate dielectric

Energy Technology Data Exchange (ETDEWEB)

Kumar, S.; Dhar, A., E-mail: adhar@phy.iitkgp.ernet.in

2015-10-15

Highlights: • Alternative to chemically crosslinking of PMMA to achieve low leakage in provided. • Effect of LiF in reducing gate leakage through the OFET device is studied. • Effect of gate leakage on transistor performance has been investigated. • Low voltage operable and low temperature processed n-channel OFETs were fabricated. - Abstract: We report low temperature processed, low voltage operable n-channel organic field effect transistors (OFETs) using N,N′-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C{sub 8}) organic semiconductor and poly(methylmethacrylate) (PMMA)/lithium fluoride (LiF) bilayer gate dielectric. We have studied the role of LiF buffer dielectric in effectively reducing the gate leakage through the device and thus obtaining superior performance in contrast to the single layer PMMA dielectric devices. The bilayer OFET devices had a low threshold voltage (V{sub t}) of the order of 5.3 V. The typical values of saturation electron mobility (μ{sub s}), on/off ratio and inverse sub-threshold slope (S) for the range of devices made were estimated to be 2.8 × 10{sup −3} cm{sup 2}/V s, 385, and 3.8 V/decade respectively. Our work thus provides a potential substitution for much complicated process of chemically crosslinking PMMA to achieve low leakage, high capacitance, and thus low operating voltage OFETs.

Long range implantation by MEVVA metal ion source

International Nuclear Information System (INIS)

Zhang Tonghe; Wu Yuguang; Ma Furong; Liang Hong

2001-01-01

Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion implantation. It is very important for research and application of the ion beam modification of materials. The results show that the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux and high dose. The implanted depth is 311.6 times greater than that of the corresponding ion range. The ion species, doses and ion fluxes play an important part in the long-range implantation. Especially, thermal atom chemistry have specific effect on the long-range implantation during high ion flux implantation at transient high target temperature

Quad delay gate generator (LBL No. 21X6691 P-2)

International Nuclear Information System (INIS)

McDonald, R.J.; Maier, M.R.; Landis, D.A.; Wozniak, G.J.

1986-08-01

A quad delay gate generator has been designed and packaged in a single-width NIM module. Both delay times and gate widths may be set continuously from 25 ns to 120 μsec. In normal operation, the gate follows the delay time unless a ''stop'' pulse cuts it short. Alternatively, the module may be operated in a bipolar mode, where the delay time is set by the input ''start'' pulse and reset by the input ''stop'' pulse. Modes and coarse time ranges are set via an octal DIP switch on the front panel. Fine adjustments of the delay and gate width are made via two twenty-turn potentiometers. Stability over a several day period was measured at ∼ 250 ps on the 120 ns full scale range. LEDs gives a visual indication of both the input rate and the dead time

Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy

International Nuclear Information System (INIS)

Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki

2011-01-01

Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

Cradle-to-Gate Emissions from a Commercial Electric Vehicle Li-Ion Battery: A Comparative Analysis.

Science.gov (United States)

Kim, Hyung Chul; Wallington, Timothy J; Arsenault, Renata; Bae, Chulheung; Ahn, Suckwon; Lee, Jaeran

2016-07-19

We report the first cradle-to-gate emissions assessment for a mass-produced battery in a commercial battery electric vehicle (BEV); the lithium-ion battery pack used in the Ford Focus BEV. The assessment was based on the bill of materials and primary data from the battery industry, that is, energy and materials input data from the battery cell and pack supplier. Cradle-to-gate greenhouse gas (GHG) emissions for the 24 kWh Ford Focus lithium-ion battery are 3.4 metric tonnes of CO2-eq (140 kg CO2-eq per kWh or 11 kg CO2-eq per kg of battery). Cell manufacturing is the key contributor accounting for 45% of the GHG emissions. We review published studies of GHG emissions associated with battery production to compare and contrast with our results. Extending the system boundary to include the entire vehicle we estimate a 39% increase in the cradle-to-gate GHG emissions of the Focus BEV compared to the Focus internal combustion engine vehicle (ICEV), which falls within the range of literature estimates of 27-63% increases for hypothetical nonproduction BEVs. Our results reduce the uncertainties associated with assessment of BEV battery production, serve to identify opportunities to reduce emissions, and confirm previous assessments that BEVs have great potential to reduce GHG emissions over the full life cycle and provide local emission free mobility.

Effects of Si3N4 passivation on the dc and RF characteristics of metamorphic high-electron-mobility transistors depending on the gate-recess structures

International Nuclear Information System (INIS)

Oh, J H; Han, M; Baek, Y H; Moon, S W; Rhee, J K; Kim, S D

2009-01-01

Effects of the Si 3 N 4 passivation on the dc and RF characteristics of a 0.1 µm metamorphic high-electron-mobility transistor (HEMT) are investigated for narrow and wide gate-recess structures. Maximum drain-source saturation current (I dss,max ) and maximum extrinsic transconductance (g m,max ) are reduced by ∼14.8 and ∼11.6%, respectively, in the wide gate-recess structure after the passivation; on the other hand, only ∼5.7 and ∼4.9% reductions are measured from I dss,max and g m,max , respectively, in the narrow gate-recess structure. We examine the passivation-induced degradation by using a modified charge control model assuming the charged surface states on the Si 3 N 4 interface and a comparative study of the hydrodynamic device simulation with the experimental measurement. From the analysis, it is proposed that the difference of degradation in two different gate structures is due to an approximately three times higher charged surface state density of ∼4.5 × 10 11 cm −2 in the wide gate-recess structure than ∼1.6 × 10 11 cm −2 in the narrow gate-recess structure. The cut-off frequency (f T ) of the wide gate-recess structure also exhibits a greater reduction of ∼14.5%, while the f T of the narrow gate-recess structure is reduced by only ∼6.6% after the passivation. This is mainly due to the passivation-induced surface states of a higher density in the wide gate-recess structure. A great increase of the gate-to-drain parasitic capacitance in the wide gate-recess structure makes a major contribution to ∼13.5% degradation of the maximum frequency of oscillation

Ambipolar transport in CVD grown MoSe2 monolayer using an ionic liquid gel gate dielectric

Directory of Open Access Journals (Sweden)

Deliris N. Ortiz

2018-03-01

Full Text Available CVD grown MoSe2 monolayers were electrically characterized at room temperature in a field effect transistor (FET configuration using an ionic liquid (IL as the gate dielectric. During the growth, instead of using MoO3 powder, ammonium heptamolybdate was used for better Mo control of the source and sodium cholate added for lager MoSe2 growth areas. In addition, a high specific capacitance (∼7 μF/cm2 IL was used as the gate dielectric to significantly reduce the operating voltage. The device exhibited ambipolar charge transport at low voltages with enhanced parameters during n- and p-FET operation. IL gating thins the Schottky barrier at the metal/semiconductor interface permitting efficient charge injection into the channel and reduces the effects of contact resistance on device performance. The large specific capacitance of the IL was also responsible for a much higher induced charge density compared to the standard SiO2 dielectric. The device was successfully tested as an inverter with a gain of ∼2. Using a common metal for contacts simplifies fabrication of this ambipolar device, and the possibility of radiative recombination of holes and electrons could further extend its use in low power optoelectronic applications.

A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.

Science.gov (United States)

Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

2018-06-15

Top-gated and bottom-gated transistors with multilayer MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on-off current ratio of 10 8 , high field-effect mobility of 10 2 cm 2 V -1 s -1 , and low subthreshold swing of 93 mV dec -1 . Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10 -3 -10 -2 V MV -1 cm -1 after 6 MV cm -1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 is a promising way to fabricate high-performance ML MoS 2 field-effect transistors for practical electron device applications.

Gates to the CERN site - Changes and reminder

CERN Multimedia

2006-01-01

I. Gate E New international agreements have been concluded between CERN, Switzerland and France concerning Gate E ('Charles de Gaulle Gate') aimed at reducing congestion at the Prévessin-RN84 and Meyrin Route customs posts, in particular during the work associated with the future Cornavin-Meyrin-CERN tram link. On the basis of these agreements, the Director-General has issued a revised version of the Rules for the use of Gate E (document CERN/DSU-RH/12222/Rev.1 which is available on the Relations with Host States website at: http:/www.cern.ch/relations/), which will enter into force as of 1 December 2006, and includes the following provisions: Gate E is open from Monday to Friday, except on official CERN holidays, from 7.00 a.m. to 9.00 a.m. for access to the site, and from 5.00 p.m. to 7.00 p.m. for departure from the site (instead of 7.30 a.m. to 9.00 a.m. and 5.00 p.m. to 6.30 p.m. respectively). The following persons are authorised to use Gate E: members of the CERN personnel (who may be accompanie...

Gates to the CERN site - Changes and reminder

CERN Multimedia

2006-01-01

I. Gate E New international agreements have been concluded between CERN, Switzerland and France concerning Gate E ('Charles de Gaulle Gate') aimed at reducing congestion at the Prévessin-RN84 and Meyrin Route customs posts, in particular during the work associated with the future Cornavin-Meyrin-CERN tram link. On the basis of these agreements, the Director-General has issued a revised version of the Rules for the use of Gate E (document CERN/DSU-RH/12222/Rev.1 which is available on the Relations with Host States website at: http:/www.cern.ch/relations/), which will enter into force as of 1December 2006, and includes the following provisions: Gate E is open from Monday to Friday, except on official CERN holidays, from 7.00 a.m. to 9.00 a.m. for access to the site, and from 5.00 p.m. to 7.00 p.m. for departure from the site (instead of 7.30 a.m. to 9.00 a.m. and 5.00 p.m. to 6.30 p.m. respectively). The following persons are authorised to use Gate E: members of the CERN personnel (who may be accompani...

Scanning gate microscopy on graphene: charge inhomogeneity and extrinsic doping

International Nuclear Information System (INIS)

Jalilian, Romaneh; Tian Jifa; Chen, Yong P; Jauregui, Luis A; Lopez, Gabriel; Roecker, Caleb; Jovanovic, Igor; Yazdanpanah, Mehdi M; Cohn, Robert W

2011-01-01

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET) using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the response of graphene resistance to the tip voltage shows significant variation with tip position, and SGM imaging displays mesoscopic domains of electron-doped and hole-doped regions. Our measurements reveal substantial spatial fluctuation in the carrier density in graphene due to extrinsic local doping from sources such as metal contacts, graphene edges, structural defects and resist residues. Our scanning gate measurements also demonstrate graphene's excellent capability to sense the local electric field and charges.

MRI-based tumor motion characterization and gating schemes for radiation therapy of pancreatic cancer

International Nuclear Information System (INIS)

Heerkens, Hanne D.; Vulpen, Marco van; Berg, Cornelis A.T. van den; Tijssen, Rob H.N.; Crijns, Sjoerd P.M.; Molenaar, Izaak Q.; Santvoort, Hjalmar C. van; Reerink, Onne; Meijer, Gert J.

2014-01-01

Background and purpose: To characterize pancreatic tumor motion and to develop a gating scheme for radiotherapy in pancreatic cancer. Materials and methods: Two cine MRIs of 60 s each were performed in fifteen pancreatic cancer patients, one in sagittal direction and one in coronal direction. A Minimum Output Sum of Squared Error (MOSSE) adaptive correlation filter was used to quantify tumor motion in craniocaudal, lateral and anteroposterior directions. To develop a gating scheme, stability of the breathing phases was examined and a gating window assessment was created, incorporating tumor motion, treatment time and motion margins. Results: The largest tumor motion was found in craniocaudal direction, with an average peak-to-peak amplitude of 15 mm (range 6–34 mm). Amplitude of the tumor in the anteroposterior direction was on average 5 mm (range 1–13 mm). The least motion was seen in lateral direction (average 3 mm, range 2–5 mm). The end exhale position was the most stable position in the breathing cycle and tumors spent more time closer to the end exhale position than to the end inhale position. On average, a margin of 25% of the maximum craniocaudal breathing amplitude was needed to achieve full target coverage with a duty cycle of 50%. When reducing the duty cycle to 50%, a margin of 5 mm was sufficient to cover the target in 11 out of 15 patients. Conclusion: Gated delivery for radiotherapy of pancreatic cancer is best performed around the end exhale position as this is the most stable position in the breathing cycle. Considerable margin reduction can be established at moderate duty cycles, yielding acceptable treatment efficiency. However, motion patterns and amplitude do substantially differ between individual patients. Therefore, individual treatment strategies should be considered for radiotherapy in pancreatic cancer

A novel approach for the improvement of electrostatic behaviour of physically doped TFET using plasma formation and shortening of gate electrode with hetero-gate dielectric

Science.gov (United States)

Soni, Deepak; Sharma, Dheeraj; Aslam, Mohd.; Yadav, Shivendra

2018-04-01

This article presents a new device configuration to enhance current drivability and suppress negative conduction (ambipolar conduction) with improved RF characteristics of physically doped TFET. Here, we used a new approach to get excellent electrical characteristics of hetero-dielectric short gate source electrode TFET (HD-SG SE-TFET) by depositing a metal electrode of 5.93 eV work function over the heavily doped source (P+) region. Deposition of metal electrode induces the plasma (thin layer) of holes under the Si/HfO2 interface due to work function difference of metal and semiconductor. Plasma layer of holes is advantageous to increase abruptness as well as decrease the tunneling barrier at source/channel junction for attaining higher tunneling rate of charge carriers (i.e., electrons), which turns into 86.66 times higher ON-state current compared with the conventional physically doped TFET (C-TFET). Along with metal electrode deposition, gate electrode is under-lapped for inducing asymmetrical concentration of charge carriers in the channel region, which is helpful for widening the tunneling barrier width at the drain/channel interface. Consequently, HD-SG SE-TFET shows suppression of ambipolar behavior with reduction in gate-to-drain capacitance which is beneficial for improvement in RF performance. Furthermore, the effectiveness of hetero-gate dielectric concept has been used for improving the RF performance. Furthermore, reliability of C-TFET and proposed structures has been confirmed in term of linearity.

Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency

International Nuclear Information System (INIS)

Sehgal, Amit; Mangla, Tina; Gupta, Mridula; Gupta, R.S.

2008-01-01

In this work, a two-dimensional potential distribution formulation is presented for multi-material gate poly-crystalline silicon thin film transistors. The developed formulation incorporates the effects due to traps and grain-boundaries. In short-channel devices, short-channel effects and drain-induced barrier lowering (DIBL) effect exists, and are accounted for in the analysis. The work aims at the reduction of DIBL effect and grain-boundary effects i.e. to reduce the potential barriers generated in the channel by employing gate-engineered structures. A study of work-functions and electrode lengths of multi-material gate electrode is done to suppress the potential barriers, hot electron effect and to improve the carrier transport efficiency. Green's function approach is adopted for the two-dimensional potential solution. The results obtained show a good agreement with simulated results, thus, demonstrating the validity of our model

Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

Science.gov (United States)

Hu, Yaoqiao; Jiang, Huaxing; Lau, Kei May; Li, Qiang

2018-04-01

For the first time, ZrO2 dielectric deposition on pristine monolayer MoS2 by atomic layer deposition (ALD) is demonstrated and ZrO2/MoS2 top-gate MOSFETs have been fabricated. ALD ZrO2 overcoat, like other high-k oxides such as HfO2 and Al2O3, was shown to enhance the MoS2 channel mobility. As a result, an on/off current ratio of over 107, a subthreshold slope of 276 mV dec-1, and a field-effect electron mobility of 12.1 cm2 V-1 s-1 have been achieved. The maximum drain current of the MOSFET with a top-gate length of 4 μm and a source/drain spacing of 9 μm is measured to be 1.4 μA μm-1 at V DS = 5 V. The gate leakage current is below 10-2 A cm-2 under a gate bias of 10 V. A high dielectric breakdown field of 4.9 MV cm-1 is obtained. Gate hysteresis and frequency-dependent capacitance-voltage measurements were also performed to characterize the ZrO2/MoS2 interface quality, which yielded an interface state density of ˜3 × 1012 cm-2 eV-1.

Drive Current Enhancement in TFET by Dual Source Region

Directory of Open Access Journals (Sweden)

Zhi Jiang

2015-01-01

Full Text Available This paper presents tunneling field-effect transistor (TFET with dual source regions. It explores the physics of drive current enhancement. The novel approach of dual source provides an effective technique for enhancing the drive current. It is found that this structure can offer four tunneling junctions by increasing a source region. Meanwhile, the dual source structure does not influence the excellent features of threshold slope (SS of TFET. The number of the electrons and holes would be doubled by going through the tunneling junctions on the original basis. The overlap length of gate-source is also studied. The dependence of gate-drain capacitance Cgd and gate-source capacitance Cgs on gate-to-source voltage Vgs and drain-to-source voltage Vds was further investigated. There are simulation setups and methodology used for the dual source TFET (DS-TFET assessment, including delay time, total energy per operation, and energy-delay product. It is confirmed that the proposed TFET has strong potentials for VLSI.

The impact of gate width setting and gate utilization factors on plutonium assay in passive correlated neutron counting

International Nuclear Information System (INIS)

Henzlova, D.; Menlove, H.O.; Croft, S.; Favalli, A.; Santi, P.

2015-01-01

In the field of nuclear safeguards, passive neutron multiplicity counting (PNMC) is a method typically employed in non-destructive assay (NDA) of special nuclear material (SNM) for nonproliferation, verification and accountability purposes. PNMC is generally performed using a well-type thermal neutron counter and relies on the detection of correlated pairs or higher order multiplets of neutrons emitted by an assayed item. To assay SNM, a set of parameters for a given well-counter is required to link the measured multiplicity rates to the assayed item properties. Detection efficiency, die-away time, gate utilization factors (tightly connected to die-away time) as well as optimum gate width setting are among the key parameters. These parameters along with the underlying model assumptions directly affect the accuracy of the SNM assay. In this paper we examine the role of gate utilization factors and the single exponential die-away time assumption and their impact on the measurements for a range of plutonium materials. In addition, we examine the importance of item-optimized coincidence gate width setting as opposed to using a universal gate width value. Finally, the traditional PNMC based on multiplicity shift register electronics is extended to Feynman-type analysis and application of this approach to Pu mass assay is demonstrated

The impact of gate width setting and gate utilization factors on plutonium assay in passive correlated neutron counting

Energy Technology Data Exchange (ETDEWEB)

Henzlova, D., E-mail: henzlova@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Menlove, H.O. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Croft, S. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Favalli, A.; Santi, P. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

2015-10-11

In the field of nuclear safeguards, passive neutron multiplicity counting (PNMC) is a method typically employed in non-destructive assay (NDA) of special nuclear material (SNM) for nonproliferation, verification and accountability purposes. PNMC is generally performed using a well-type thermal neutron counter and relies on the detection of correlated pairs or higher order multiplets of neutrons emitted by an assayed item. To assay SNM, a set of parameters for a given well-counter is required to link the measured multiplicity rates to the assayed item properties. Detection efficiency, die-away time, gate utilization factors (tightly connected to die-away time) as well as optimum gate width setting are among the key parameters. These parameters along with the underlying model assumptions directly affect the accuracy of the SNM assay. In this paper we examine the role of gate utilization factors and the single exponential die-away time assumption and their impact on the measurements for a range of plutonium materials. In addition, we examine the importance of item-optimized coincidence gate width setting as opposed to using a universal gate width value. Finally, the traditional PNMC based on multiplicity shift register electronics is extended to Feynman-type analysis and application of this approach to Pu mass assay is demonstrated.

Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer

Energy Technology Data Exchange (ETDEWEB)

Liao, Po-Yung [Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Tsai, Ming-Yen; Chen, Bo-Wei; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China); Chou, Cheng-Hsu; Chang, Jung-Fang [Product Technology Center, Chimei Innolux Corp., Tainan 741, Taiwan (China)

2016-03-31

The degree of degradation between the amorphous-indium–gallium–zinc oxide (a-IGZO) thin film transistor (TFT) using the top-gate only or bottom-gate only is compared. Under negative gate bias illumination stress (NBIS), the threshold voltage (V{sub T}) after bottom-gate NBIS monotonically shifts in the negative direction, whereas top-gate NBIS operation exhibits on-state current increases without V{sub T} shift. Such anomalous degradation behavior of NBIS under top-gate operation is due to hole-trapping in the etch stop layer above the central portion of the channel. These phenomena can be ascribed to the screening of the electric field by redundant source/drain electrodes. In addition, the device degradation of dual gate a-IGZO TFT stressed with different top gate pulse waveforms is investigated. It is observed that the degradation is dependent on the frequency of the top gate pulses. The V{sub T} shift increases with decreasing frequency, indicating the hole mobility of IGZO is low. - Highlights: • Static and dynamic gate bias stresses are imposed on dual gate InGaZnO TFTs. • Top-gate NBIS operation exhibits on-state current increases without VT shift. • The degradation behavior of top-gate NBIS is due to hole-trapping in the ESL. • The degradation is dependent on the frequency of the top gate pulses. • The V{sub T} shift increases with decreasing frequency of the top gate pulses.

Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer

International Nuclear Information System (INIS)

Liao, Po-Yung; Chang, Ting-Chang; Hsieh, Tien-Yu; Tsai, Ming-Yen; Chen, Bo-Wei; Chu, Ann-Kuo; Chou, Cheng-Hsu; Chang, Jung-Fang

2016-01-01

The degree of degradation between the amorphous-indium–gallium–zinc oxide (a-IGZO) thin film transistor (TFT) using the top-gate only or bottom-gate only is compared. Under negative gate bias illumination stress (NBIS), the threshold voltage (V T ) after bottom-gate NBIS monotonically shifts in the negative direction, whereas top-gate NBIS operation exhibits on-state current increases without V T shift. Such anomalous degradation behavior of NBIS under top-gate operation is due to hole-trapping in the etch stop layer above the central portion of the channel. These phenomena can be ascribed to the screening of the electric field by redundant source/drain electrodes. In addition, the device degradation of dual gate a-IGZO TFT stressed with different top gate pulse waveforms is investigated. It is observed that the degradation is dependent on the frequency of the top gate pulses. The V T shift increases with decreasing frequency, indicating the hole mobility of IGZO is low. - Highlights: • Static and dynamic gate bias stresses are imposed on dual gate InGaZnO TFTs. • Top-gate NBIS operation exhibits on-state current increases without VT shift. • The degradation behavior of top-gate NBIS is due to hole-trapping in the ESL. • The degradation is dependent on the frequency of the top gate pulses. • The V T shift increases with decreasing frequency of the top gate pulses.

High-Fidelity Quantum Logic Gates Using Trapped-Ion Hyperfine Qubits.

Science.gov (United States)

Ballance, C J; Harty, T P; Linke, N M; Sepiol, M A; Lucas, D M

2016-08-05

We demonstrate laser-driven two-qubit and single-qubit logic gates with respective fidelities 99.9(1)% and 99.9934(3)%, significantly above the ≈99% minimum threshold level required for fault-tolerant quantum computation, using qubits stored in hyperfine ground states of calcium-43 ions held in a room-temperature trap. We study the speed-fidelity trade-off for the two-qubit gate, for gate times between 3.8  μs and 520  μs, and develop a theoretical error model which is consistent with the data and which allows us to identify the principal technical sources of infidelity.

Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

International Nuclear Information System (INIS)

Jiang Xiang-Wei; Li Shu-Shen

2012-01-01

By using the linear combination of bulk band (LCBB) method incorporated with the top of the barrier splitting (TBS) model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate (DG) metal—oxide—semiconductor field-effect transistors (MOSFETs). A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness (2.0 nm and below) by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

SU-E-T-401: Feasibility Study of Using ABC to Gate Lung SBRT Treatment

International Nuclear Information System (INIS)

Cao, D; Xie, X; Shepard, D

2014-01-01

Purpose: The current SBRT treatment techniques include free breathing (FB) SBRT and gated FB SBRT. Gated FB SBRT has smaller target and less lung toxicity with longer treatment time. The recent development of direct connectivity between the ABC and linac allowing for automated beam gating. In this study, we have examined the feasibility of using ABC system to gate the lung SBRT treatment. Methods: A CIRS lung phantom with a 3cm sphere-insert and a moving chest plate was used in this study. Sinusoidal motion was used for the FB pattern. An ABC signal was imported to simulate breath holds. 4D-CT was taken in FB mode and average-intensity-projection (AIP) was used to create FB and 50% gated FB SBRT planning CT. A manually gated 3D CT scan was acquired for ABC gated SBRT planning.An SBRT plan was created for each treatment option. A surface-mapping system was used for 50% gating and ABC system was used for ABC gating. A manually gated CBCT scan was also performed to verify setup. Results: Among three options, the ABC gated plan has the smallest PTV of 35.94cc, which is 35% smaller comparing to that of the FB plan. Consequently, the V20 of the left lung reduced by 15% and 23% comparing to the 50% gated FB and FB plans, respectively. The FB plan took 4.7 minutes to deliver, while the 50% gated FB plan took 18.5 minutes. The ABC gated plan delivery took only 10.6 minutes. A stationary target with 3cm diameter was also obtained from the manually gated CBCT scan. Conclusion: A strategy for ABC gated lung SBRT was developed. ABC gating can significantly reduce the lung toxicity while maintaining the target coverage. Comparing to the 50% gated FB SBRT, ABC gated treatment can also provide less lung toxicity as well as improved delivery efficiency. This research is funded by Elekta

Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices

Directory of Open Access Journals (Sweden)

Masamichi Suzuki

2012-03-01

Full Text Available A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO3 high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO3 as compared with Hf-based high-k materials is the thermal stability at the interface with Si, which suppresses the formation of a low-permittivity Si oxide interfacial layer. Careful selection of the film deposition conditions has enabled successful deposition of an LaAlO3 gate dielectric film with an equivalent oxide thickness (EOT of 0.31 nm. Direct contact with Si has been revealed to cause significant tensile strain to the Si in the interface region. The high stability of the effective work function with respect to the annealing conditions has been demonstrated through comparison with Hf-based dielectrics. It has also been shown that the effective work function can be tuned over a wide range by controlling the La/(La + Al atomic ratio. In addition, gate-first n-MOSFETs with ultrathin EOT that use sulfur-implanted Schottky source/drain technology have been fabricated using a low-temperature process.

Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach

Science.gov (United States)

Molaei Imen Abadi, Rouzbeh; Sedigh Ziabari, Seyed Ali

2016-11-01

In this paper, a first qualitative study on the performance characteristics of dual-work function gate junctionless TFET (DWG-JLTFET) on the basis of energy band profile modulation is investigated. A dual-work function gate technique is used in a JLTFET in order to create a downward band bending on the source side similar to PNPN structure. Compared with the single-work function gate junctionless TFET (SWG-JLTFET), the numerical simulation results demonstrated that the DWG-JLTFET simultaneously optimizes the ON-state current, the OFF-state leakage current, and the threshold voltage and also improves average subthreshold slope. It is illustrated that if appropriate work functions are selected for the gate materials on the source side and the drain side, the JLTFET exhibits a considerably improved performance. Furthermore, the optimization design of the tunnel gate length ( L Tun) for the proposed DWG-JLTFET is studied. All the simulations are done in Silvaco TCAD for a channel length of 20 nm using the nonlocal band-to-band tunneling (BTBT) model.

Modeling and simulation of floating gate nanocrystal FET devices and circuits

Science.gov (United States)

Hasaneen, El-Sayed A. M.

The nonvolatile memory market has been growing very fast during the last decade, especially for mobile communication systems. The Semiconductor Industry Association International Technology Roadmap for Semiconductors states that the difficult challenge for nonvolatile semiconductor memories is to achieve reliable, low power, low voltage performance and high-speed write/erase. This can be achieved by aggressive scaling of the nonvolatile memory cells. Unfortunately, scaling down of conventional nonvolatile memory will further degrade the retention time due to the charge loss between the floating gate and drain/source contacts and substrate which makes conventional nonvolatile memory unattractive. Using nanocrystals as charge storage sites reduces dramatically the charge leakage through oxide defects and drain/source contacts. Floating gate nanocrystal nonvolatile memory, FG-NCNVM, is a candidate for future memory because it is advantageous in terms of high-speed write/erase, small size, good scalability, low-voltage, low-power applications, and the capability to store multiple bits per cell. Many studies regarding FG-NCNVMs have been published. Most of them have dealt with fabrication improvements of the devices and device characterizations. Due to the promising FG-NCNVM applications in integrated circuits, there is a need for circuit a simulation model to simulate the electrical characteristics of the floating gate devices. In this thesis, a FG-NCNVM circuit simulation model has been proposed. It is based on the SPICE BSIM simulation model. This model simulates the cell behavior during normal operation. Model validation results have been presented. The SPICE model shows good agreement with experimental results. Current-voltage characteristics, transconductance and unity gain frequency (fT) have been studied showing the effect of the threshold voltage shift (DeltaVth) due to nanocrystal charge on the device characteristics. The threshold voltage shift due to

Comparison of prospective electrocardiography-gating high-pitch mode and without electrocardiography-synchronization high-pitch mode acquisition for the image quality and radiation doses of the aortic using dual-source CT

International Nuclear Information System (INIS)

Li Jian; Huan Yi; Zhao Hongliang; Wang Ying; Liu Ying; Wei Mengqi; Shi Mingguo; Zheng Minwen

2013-01-01

Objective: To evaluate the application of prospective ECG-gating Flash spiral scan mode dual-source CT in aortography, and compare it's image quality and radiation dose with without ECG-synchronization high-pitch spiral scanning mode. Methods: Fifty consecutive patients (Group A) with suspected aortic dissection or after operations for the aortic dissection were scanned with prospective ECG-gated high-pitch scan and another 50 consecutive patients (Group B) were analyzed by non-ECG-gated high-pitch scan. Image quality of the aortic was assessed by two independent readers. Image noise was measured, radiation dose estimates were calculated. The imaging quality of the aortic and the radiation dose were compared with Mann-whitney U and t test. Results: The average image quality score [(1.18 ± 0.40) in group A and (1.23 ± 0.31) in group B] showed no significant difference between group A and group B (U = 1.20, P = 0.23). The mean radiation dose of group A was lower than that of group B [(1.49 ± 0.38) mSv in group A, (2.79 ± 0.54) mSv in group B, t = 13.677, P < 0.05]. Conclusion: Prospective ECG-gated dual source CT Flash spiral scanning with low radiation dose and good image quality in the aortic dissection with high value of clinical application. (authors)

Round Gating for Low Energy Block Ciphers

DEFF Research Database (Denmark)

Banik, Subhadeep; Bogdanov, Andrey; Regazzoni, Francesco

2016-01-01

design techniques for implementing block ciphers in a low energy fashion. We concentrate on round based implementation and we discuss how gating, applied at round level can affect and improve the energy consumption of the most common lightweight block cipher currently used in the internet of things....... Additionally, we discuss how to needed gating wave can be generated. Experimental results show that our technique is able to reduce the energy consumption in most block ciphers by over 60% while incurring only a minimal overhead in hardware....

A gate-induced switch in zigzag graphene nanoribbons and charging effects

International Nuclear Information System (INIS)

Cheraghchi, Hosein; Esmailzade, Hanyieh

2010-01-01

Using the non-equilibrium Green's function formalism, we investigate nonlinear transport and charging effects of gated graphene nanoribbons (GNRs) with an even number of zigzag chains. We find a negative differential resistance (NDR) over a wide range of gate voltages with an on/off ratio ∼ 10 6 for narrow enough ribbons. This NDR originates from the parity selection rule and also prohibition of transport between discontinuous energy bands. Since the external field is well screened close to the contacts, the NDR is robust against the electrostatic potential. However, for voltages higher than the NDR threshold, due to charge transfer through the edges of the zigzag GNR (ZGNR), screening is reduced such that the external potential can penetrate inside the ribbon giving rise to smaller values of off-current. Furthermore, the on/off ratio of the current depends on the aspect ratio of the length/width and also edge impurity. Moreover, the on/off ratio displays a power law behavior as a function of ribbon length.

Voltage-Dependent Gating of hERG Potassium Channels

Science.gov (United States)

Cheng, Yen May; Claydon, Tom W.

2012-01-01

The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv) channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4–S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-à-go-go related gene, hERG), which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure–function relationships underlying activation and deactivation gating in Shaker and hERG channels, with a focus on the roles of the voltage-sensing domain and the S4–S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter-charge interactions. More recent data suggest that key amino acid differences in the hERG voltage-sensing unit and S4–S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor. PMID:22586397

Voltage-dependent gating of hERG potassium channels

Directory of Open Access Journals (Sweden)

Yen May eCheng

2012-05-01

Full Text Available The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4-S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-a-go-go related gene, hERG, which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure-function relationships underlying voltage-dependent gating in Shaker and hERG channels, with a focus on the roles of the voltage sensing domain and the S4-S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter charge interactions. More recent data suggest that key amino acid differences in the hERG voltage sensing unit and S4-S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor.

Subthreshold Current and Swing Modeling of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile

Science.gov (United States)

Singh, Kunal; Kumar, Sanjay; Goel, Ekta; Singh, Balraj; Kumar, Mirgender; Dubey, Sarvesh; Jit, Satyabrata

2017-01-01

This paper proposes a new model for the subthreshold current and swing of the short-channel symmetric underlap ultrathin double gate metal oxide field effect transistors with a source/drain lateral Gaussian doping profile. The channel potential model already reported earlier has been utilized to formulate the closed form expression for the subthreshold current and swing of the device. The effects of the lateral straggle and geometrical parameters such as the channel length, channel thickness, and oxide thickness on the off current and subthreshold slope have been demonstrated. The devices with source/drain lateral Gaussian doping profiles in the underlap structure are observed to be highly resistant to short channel effects while improving the current drive. The proposed model is validated by comparing the results with the numerical simulation data obtained by using the commercially available ATLAS™, a two-dimensional (2-D) device simulator from SILVACO.

Linear gate

International Nuclear Information System (INIS)

Suwono.

1978-01-01

A linear gate providing a variable gate duration from 0,40μsec to 4μsec was developed. The electronic circuity consists of a linear circuit and an enable circuit. The input signal can be either unipolar or bipolar. If the input signal is bipolar, the negative portion will be filtered. The operation of the linear gate is controlled by the application of a positive enable pulse. (author)

Doppler optical cardiogram gated 2D color flow imaging at 1000 fps and 4D in vivo visualization of embryonic heart at 45 fps on a swept source OCT system.

Science.gov (United States)

Mariampillai, Adrian; Standish, Beau A; Munce, Nigel R; Randall, Cristina; Liu, George; Jiang, James Y; Cable, Alex E; Vitkin, I A; Yang, Victor X D

2007-02-19

We report a Doppler optical cardiogram gating technique for increasing the effective frame rate of Doppler optical coherence tomography (DOCT) when imaging periodic motion as found in the cardiovascular system of embryos. This was accomplished with a Thorlabs swept-source DOCT system that simultaneously acquired and displayed structural and Doppler images at 12 frames per second (fps). The gating technique allowed for ultra-high speed visualization of the blood flow pattern in the developing hearts of African clawed frog embryos (Xenopus laevis) at up to 1000 fps. In addition, four-dimensional (three spatial dimensions + temporal) Doppler imaging at 45 fps was demonstrated using this gating technique, producing detailed visualization of the complex cardiac motion and hemodynamics in a beating heart.

Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour.

Science.gov (United States)

Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

2015-03-05

Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. The ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems. But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable. Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state. Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold-the pressure needed to open the pores-can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping. These capabilities allow us to dynamically modulate gas-liquid sorting in a microfluidic flow and to separate a three-phase air-water-oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

Energy Technology Data Exchange (ETDEWEB)

Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

2016-09-01

We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

Managing truck arrivals with time windows to alleviate gate congestion at container terminals

DEFF Research Database (Denmark)

Chen, G.; Govindan, Kannan; Yang, Z.

2013-01-01

Long truck queues at gates often limit the efficiency of a container terminal and generate serious air pollution. To reduce the gate congestion, this paper proposes a method called'vessel dependent time windows (VDTWs)' to control truck arrivals, which involves partitioning truck entries into gro......Long truck queues at gates often limit the efficiency of a container terminal and generate serious air pollution. To reduce the gate congestion, this paper proposes a method called'vessel dependent time windows (VDTWs)' to control truck arrivals, which involves partitioning truck entries...... into groups and assigning different time windows to the groups. The proposed VDTWs method includes three steps: (1) predicting truck arrivals based on the time window assignment, (2) estimating the queue length of trucks, and (3) optimizing the arrangement of time windows to minimize the total cost...

Burnout and gate rupture of power MOS transistors with fission fragments of 252Cf

International Nuclear Information System (INIS)

Tang Benqi; Wang Yanping; Geng Bin; Chen Xiaohua; He Chaohui; Yang Hailiang

2000-01-01

A study to determine the single event burnout (SEB) and single event gate rupture (SEGR) sensitivities of power MOSFET devices is carried out by exposure to fission fragments from 252 Cf source. The test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism are presented. The test results include the observed dependence upon applied drain or gate to source bias and effect of external capacitors and limited resistors

New gate opening hours

CERN Multimedia

GS Department

2009-01-01

Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

Dual-gate polysilicon nanoribbon biosensors enable high sensitivity detection of proteins

International Nuclear Information System (INIS)

Zeimpekis, I; Sun, K; Hu, C; Ditshego, N M J; De Planque, M R R; Chong, H M H; Morgan, H; Ashburn, P; Thomas, O

2016-01-01

We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH"−"1 is obtained in the subthreshold region when the top-gate is kept at a fixed potential and the bottom-gate is varied (voltage sweep). This is an improvement of 16 times over the 30 mV pH"−"1 measured using a top-gate sweep with the bottom-gate at a fixed potential. A similar large voltage shift of 175 mV is obtained when the protein avidin is sensed using a bottom-gate sweep. This is an improvement of 20 times compared with the 8.8 mV achieved from a top-gate sweep. Current measurements using bottom-gate sweeps do not deliver the same signal amplification as when using bottom-gate sweeps to measure voltage shifts. Thus, for detecting a small signal change on protein binding, it is advantageous to employ a double-gate transistor and to measure a voltage shift using a bottom-gate sweep. For top-gate sweeps, the use of a dual-gate transistor enables the current sensitivity to be enhanced by applying a negative bias to the bottom-gate to reduce the carrier concentration in the nanoribbon. For pH measurements, the current sensitivity increases from 65% to 149% and for avidin sensing it increases from 1.4% to 2.5%. (paper)

Development of source range measurement instrument in Xi'an pulsed reactor

CERN Document Server

Wang Li

2002-01-01

Source range measurement instrument in Xi'an pulsed reactor is key equipment of low-side measuring in source range. At the same time, it is also weighty component of out-of-pile neutron-flux level observation system. The authors have done some researching and renovating based on the similar type devices used in nuclear reactor to improve the meter sensitivity, measuring range, noise proof features, reliability in running and maintainability which belong to the main performance index of the instrument. The design ideas, configurations, working principle, performance indexes, technique features and effect in utilizing are introduced briefly

Active gated imaging for automotive safety applications

Science.gov (United States)

Grauer, Yoav; Sonn, Ezri

2015-03-01

The paper presents the Active Gated Imaging System (AGIS), in relation to the automotive field. AGIS is based on a fast gated-camera equipped with a unique Gated-CMOS sensor, and a pulsed Illuminator, synchronized in the time domain to record images of a certain range of interest which are then processed by computer vision real-time algorithms. In recent years we have learned the system parameters which are most beneficial to night-time driving in terms of; field of view, illumination profile, resolution and processing power. AGIS provides also day-time imaging with additional capabilities, which enhances computer vision safety applications. AGIS provides an excellent candidate for camera-based Advanced Driver Assistance Systems (ADAS) and the path for autonomous driving, in the future, based on its outstanding low/high light-level, harsh weather conditions capabilities and 3D potential growth capabilities.

Toward error-free scaled spin torque majority gates

Energy Technology Data Exchange (ETDEWEB)

Vaysset, Adrien; Manfrini, Mauricio; Pourtois, Geoffrey; Radu, Iuliana P.; Thean, Aaron [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A. [Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, Oregon 97124 (United States)

2016-06-15

The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.

Toward error-free scaled spin torque majority gates

Directory of Open Access Journals (Sweden)

Adrien Vaysset

2016-06-01

Full Text Available The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.

A split accumulation gate architecture for silicon MOS quantum dots

Science.gov (United States)

Rochette, Sophie; Rudolph, Martin; Roy, Anne-Marie; Curry, Matthew; Ten Eyck, Gregory; Dominguez, Jason; Manginell, Ronald; Pluym, Tammy; King Gamble, John; Lilly, Michael; Bureau-Oxton, Chloé; Carroll, Malcolm S.; Pioro-Ladrière, Michel

We investigate tunnel barrier modulation without barrier electrodes in a split accumulation gate architecture for silicon metal-oxide-semiconductor quantum dots (QD). The layout consists of two independent accumulation gates, one gate forming a reservoir and the other the QD. The devices are fabricated with a foundry-compatible, etched, poly-silicon gate stack. We demonstrate 4 orders of magnitude of tunnel-rate control between the QD and the reservoir by modulating the reservoir gate voltage. Last electron charging energies of app. 10 meV and tuning of the ST splitting in the range 100-200 ueV are observed in two different split gate layouts and labs. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Integrated-optics heralded controlled-NOT gate for polarization-encoded qubits

Science.gov (United States)

Zeuner, Jonas; Sharma, Aditya N.; Tillmann, Max; Heilmann, René; Gräfe, Markus; Moqanaki, Amir; Szameit, Alexander; Walther, Philip

2018-03-01

Recent progress in integrated-optics technology has made photonics a promising platform for quantum networks and quantum computation protocols. Integrated optical circuits are characterized by small device footprints and unrivalled intrinsic interferometric stability. Here, we take advantage of femtosecond-laser-written waveguides' ability to process polarization-encoded qubits and present an implementation of a heralded controlled-NOT gate on chip. We evaluate the gate performance in the computational basis and a superposition basis, showing that the gate can create polarization entanglement between two photons. Transmission through the integrated device is optimized using thermally expanded core fibers and adiabatically reduced mode-field diameters at the waveguide facets. This demonstration underlines the feasibility of integrated quantum gates for all-optical quantum networks and quantum repeaters.

Ultra-fine metal gate operated graphene optical intensity modulator

Science.gov (United States)

Kou, Rai; Hori, Yosuke; Tsuchizawa, Tai; Warabi, Kaori; Kobayashi, Yuzuki; Harada, Yuichi; Hibino, Hiroki; Yamamoto, Tsuyoshi; Nakajima, Hirochika; Yamada, Koji

2016-12-01

A graphene based top-gate optical modulator on a standard silicon photonic platform is proposed for the future optical telecommunication networks. On the basis of the device simulation, we proposed that an electro-absorption light modulation can be realized by an ultra-narrow metal top-gate electrode (width less than 400 nm) directly located on the top of a silicon wire waveguide. The designed structure also provides excellent features such as carrier doping and waveguide-planarization free fabrication processes. In terms of the fabrication, we established transferring of a CVD-grown mono-layer graphene sheet onto a CMOS compatible silicon photonic sample followed by a 25-nm thick ALD-grown Al2O3 deposition and Source-Gate-Drain electrodes formation. In addition, a pair of low-loss spot-size converter for the input and output area is integrated for the efficient light source coupling. The maximum modulation depth of over 30% (1.2 dB) is observed at a device length of 50 μm, and a metal width of 300 nm. The influence of the initial Fermi energy obtained by experiment on the modulation performance is discussed with simulation results.

Design and Optimization of 22 nm Gate Length High-k/Metal gate NMOS Transistor

International Nuclear Information System (INIS)

Afifah Maheran A H; Menon P S; Shaari, S; Elgomati, H A; Salehuddin, F; Ahmad, I

2013-01-01

In this paper, we invented the optimization experiment design of a 22 nm gate length NMOS device which uses a combination of high-k material and metal as the gate which was numerically developed using an industrial-based simulator. The high-k material is Titanium dioxide (TiO 2 ), while the metal gate is Tungsten Silicide (WSi x ). The design is optimized using the L9 Taguchi method to get the optimum parameter design. There are four process parameters and two noise parameters which were varied for analyzing the effect on the threshold voltage (V th ). The objective of this experiment is to minimize the variance of V th where Taguchi's nominal-the-best signal-to-noise ratio (S/N Ratio) was used. The best settings of the process parameters were determined using Analysis of Mean (ANOM) and analysis of variance (ANOVA) to reduce the variability of V th . The results show that the V th values have least variance and the mean value can be adjusted to 0.306V ±0.027 for the NMOS device which is in line with projections by the ITRS specifications.

Bio Organic-Semiconductor Field-Effect Transistor (BioFET) Based on Deoxyribonucleic Acid (DNA) Gate Dielectric

Science.gov (United States)

2010-03-31

floating gate devices and metal-insulator-oxide-semiconductor (MIOS) devices. First attempts to use polarizable gate insulators in combination with...bulk of the semiconductor (ii) Due to the polarizable gate dielectric (iii) dipole polarization and (iv)electret effect due to mobile ions in the...characterization was carried out under an argon environment inside the glove box. An Agilent model E5273A with a two source-measurement unit instrument was

Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT

Energy Technology Data Exchange (ETDEWEB)

Kim, J. J.; Lim, J. H.; Yang, J. W. [Chonbuk National University, Jeonju (Korea, Republic of); Stanchina, W. [University of Pittsburgh, Pittsburgh, PA (United States)

2014-08-15

The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to treat of the source and the drain region, but current flowed into the gate even at a negative voltage in a limited region when the measurement was executed with a gate voltage sweep from negative to positive voltage. Also the electrical characteristics of the HEMT were degraded by pulsed operation of the gate. Traps newly generated on the surface were regarded as sources for the current that flowed against the applied voltage, and the number of traps was estimated. Also, a slow transient in the drain current was confirmed based on the results of delayed sweep measurements.

Dose profile measurements during respiratory-gated lung stereotactic radiotherapy: A phantom study

International Nuclear Information System (INIS)

Jong, W L; Ung, N M; Wong, J H D; Ng, K H

2016-01-01

During stereotactic body radiotherapy, high radiation dose (∼60 Gy) is delivered to the tumour in small fractionation regime. In this study, the dosimetric characteristics were studied using radiochromic film during respiratory-gated and non-gated lung stereotactic body radiotherapy (SBRT). Specifically, the effect of respiratory cycle and amplitude, as well as gating window on the dosimetry were studied. In this study, the dose profiles along the irradiated area were measured. The dose profiles for respiratory-gated radiation delivery with different respiratory or tumour motion amplitudes, gating windows and respiratory time per cycle were in agreement with static radiation delivery. The respiratory gating system was able to deliver the radiation dose accurately (±1.05 mm) in the longitudinal direction. Although the treatment time for respiratory-gated SBRT was prolonged, this approach can potentially reduce the margin for internal tumour volume without compromising the tumour coverage. In addition, the normal tissue sparing effect can be improved. (paper)

Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

Energy Technology Data Exchange (ETDEWEB)

Hou, X; Hu, YH; Grinthal, A; Khan, M; Aizenberg, J

2015-03-04

Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. The ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems(1-10). But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries(6,11-17), a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable(11,12). Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state. Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold-the pressure needed to open the pores-can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping. These capabilities allow us to dynamically modulate gas-liquid sorting in a microfluidic flow and to separate a three-phase air-water-oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

Directory of Open Access Journals (Sweden)

Muhammad Nawaz

2015-01-01

Full Text Available This work deals with the assessment of gate dielectric for 4H-SiC MOSFETs using technology based two-dimensional numerical computer simulations. Results are studied for variety of gate dielectric candidates with varying thicknesses using well-known Fowler-Nordheim tunneling model. Compared to conventional SiO2 as a gate dielectric for 4H-SiC MOSFETs, high-k gate dielectric such as HfO2 reduces significantly the amount of electric field in the gate dielectric with equal gate dielectric thickness and hence the overall gate current density. High-k gate dielectric further reduces the shift in the threshold voltage with varying dielectric thicknesses, thus leading to better process margin and stable device operating behavior. For fixed dielectric thickness, a total shift in the threshold voltage of about 2.5 V has been observed with increasing dielectric constant from SiO2 (k=3.9 to HfO2 (k=25. This further results in higher transconductance of the device with the increase of the dielectric constant from SiO2 to HfO2. Furthermore, 4H-SiC MOSFETs are found to be more sensitive to the shift in the threshold voltage with conventional SiO2 as gate dielectric than high-k dielectric with the presence of interface state charge density that is typically observed at the interface of dielectric and 4H-SiC MOS surface.

Hysteresis analysis of graphene transistor under repeated test and gate voltage stress

International Nuclear Information System (INIS)

Yang Jie; Jia Kunpeng; Su Yajuan; Zhao Chao; Chen Yang

2014-01-01

The current transport characteristic is studied systematically based on a back-gate graphene field effect transistor, under repeated test and gate voltage stress. The interface trapped charges caused by the gate voltage sweep process screens the gate electric field, and results in the neutral point voltage shift between the forth and back sweep direction. In the repeated test process, the neutral point voltage keeps increasing with test times in both forth and back sweeps, which indicates the existence of interface trapped electrons residual and accumulation. In gate voltage stress experiment, the relative neutral point voltage significantly decreases with the reducing of stress voltage, especially in −40 V, which illustrates the driven-out phenomenon of trapped electrons under negative voltage stress. (semiconductor devices)

The greenhouse emissions footprint of free-range eggs.

Science.gov (United States)

Taylor, R C; Omed, H; Edwards-Jones, G

2014-01-01

Eggs are an increasingly significant source of protein for human consumption, and the global poultry industry is the single fastest-growing livestock sector. In the context of international concern for food security and feeding an increasingly affluent human population, the contribution to global greenhouse-gas (GHG) emissions from animal protein production is of critical interest. We calculated the GHG emissions footprint for the fastest-growing sector of the UK egg market: free-range production in small commercial units on mixed farms. Emissions are calculated to current Intergovernmental Panel on Climate Change and UK standards (PAS2050): including direct, indirect, and embodied emissions from cradle to farm gate compatible with a full product life-cycle assessment. We present a methodology for the allocation of emissions between ruminant and poultry enterprises on mixed farms. Greenhouse gas emissions averaged a global warming potential of 2.2 kg of CO2e/dozen eggs, or 1.6 kg of CO2equivalent (e)/kg (assuming average egg weight of 60 g). One kilogram of protein from free-range eggs produces 0.2 kg of CO2e, lower than the emissions from white or red meat (based on both kg of meat and kg of protein). Of these emissions, 63% represent embodied carbon in poultry feed. A detailed GHG emissions footprint represents a baseline for comparison with other egg production systems and sources of protein for human consumption. Eggs represent a relatively low-carbon supply of animal protein, but their production is heavily dependent on cereals and soy, with associated high emissions from industrial nitrogen production, land-use change, and transport. Alternative sources of digestible protein for poultry diets are available, may be produced from waste processing, and would be an effective tool for reducing the industry's GHG emissions and dependence on imported raw materials.

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

Energy Technology Data Exchange (ETDEWEB)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

2017-07-01

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

The Challenges of Implementing Fine-Grained Power Gating

NARCIS (Netherlands)

Niedermeier, A.; Svarstad, Kjetil; Bouwens, Frank; Hulzink, Jos; Huisken, Jos

2010-01-01

Power consumption in digital systems, especially in portable devices, is a crucial design factor. Due to downscaling of technology, dynamic switching power is not the only relevant source of power consumption anymore as power dissipation caused by leakage currents increases. Even though power gating

Design Principles of A Sigma-delta Flux-gate Magnetometer

Science.gov (United States)

Magnes, W.; Valavanoglou, A.; Pierce, D.; Frank, A.; Schwingenschuh, K.

A state-of-the-art flux-gate magnetometer is characterised by magnetic field resolution of several pT in a wide frequency range, low power consumption, low weight and high robustness. Therefore, flux-gate magnetometers are frequently used for ground-based Earth's field observation as well as for measurements aboard scientific space missions. But both traditional analogue and recently developed digital flux-gate magnetometers need low power and high-resolution analogue-to-digital converters for signal quan- tization. The disadvantage of such converters is the low radiation hardness. This fact has led to the idea of combining a traditional analogue flux-gate regulation circuit with that of a discretely realized sigma-delta converter in order to get a radiation hard and further miniaturized magnetometer. The name sigma-delta converter is derived from putting an integrator in front of a 1-bit delta modulator which forms the sigma-delta loop. It is followed by a digital decimation filter realized in a field-programmable gate array (FPGA). The flux-gate regulation and the sigma-delta loop are quite similar in the way of realizing the integrator and feedback circuit, which makes it easy to com- bine these two systems. The presented talk deals with the design principles and the results of a first bread board model.

Nonlocal multi-target controlled–controlled gate using Greenberger–Horne–Zeilinger channel and qutrit catalysis

International Nuclear Information System (INIS)

Chen Li-Bing; Lu Hong

2015-01-01

We present a scheme for implementing locally a nonlocal N-target controlled–controlled gate with unit probability of success by harnessing two (N+1)-qubit Greenberger–Horne–Zeilinger (GHZ) states as quantum channel and N qutrits as catalyser. The quantum network that implements this nonlocal (N+2)-body gate is built entirely of local single-body and two-body gates, and has only (3N+2) two-body gates. This result suggests that both the computational depth of quantum network and the quantum resources required to perform this nonlocal gate might be significantly reduced. This scheme can be generalized straightforwardly to implement a nonlocal N-target and M-control qubits gate. (paper)

Gate current for p+-poly PMOS devices under gate injection conditions

NARCIS (Netherlands)

Hof, A.J.; Holleman, J.; Woerlee, P.H.

2001-01-01

In current CMOS processing both n+-poly and p+-poly gates are used. The I-V –relationship and reliability of n+-poly devices are widely studied and well understood. Gate currents and reliability for p+-poly PMOS devices under gate injection conditions are not well understood. In this paper, the

Gate-defined Quantum Confinement in Suspended Bilayer Graphene

Science.gov (United States)

Allen, Monica

2013-03-01

Quantum confined devices in carbon-based materials offer unique possibilities for applications ranging from quantum computation to sensing. In particular, nanostructured carbon is a promising candidate for spin-based quantum computation due to the ability to suppress hyperfine coupling to nuclear spins, a dominant source of spin decoherence. Yet graphene lacks an intrinsic bandgap, which poses a serious challenge for the creation of such devices. We present a novel approach to quantum confinement utilizing tunnel barriers defined by local electric fields that break sublattice symmetry in suspended bilayer graphene. This technique electrostatically confines charges via band structure control, thereby eliminating the edge and substrate disorder that hinders on-chip etched nanostructures to date. We report clean single electron tunneling through gate-defined quantum dots in two regimes: at zero magnetic field using the energy gap induced by a perpendicular electric field and at finite magnetic fields using Landau level confinement. The observed Coulomb blockade periodicity agrees with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates quantum confinement with pristine device quality and access to vibrational modes, enabling wide applications from electromechanical sensors to quantum bits. More broadly, the ability to externally tailor the graphene bandgap over nanometer scales opens a new unexplored avenue for creating quantum devices.

Fast quantum logic gates with trapped-ion qubits

Science.gov (United States)

Schäfer, V. M.; Ballance, C. J.; Thirumalai, K.; Stephenson, L. J.; Ballance, T. G.; Steane, A. M.; Lucas, D. M.

2018-03-01

Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural ‘speed limit’ of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds—less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually

Local gate control in carbon nanotube quantum devices

Science.gov (United States)

Biercuk, Michael Jordan

This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single

Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer and drain-underlap structure

Science.gov (United States)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-04-01

In this work, we present a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on an asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor (TFET) for DRAM applications. The n-doped boosting layer and gate2 drain-underlap structure is employed in the device to obtain an excellent 1T-DRAM performance. The n-doped layer inserted between the source and channel regions improves the sensing margin because of a high rate of increase in the band-to-band tunneling (BTBT) probability. Furthermore, because the gate2 drain-underlap structure reduces the recombination rate that occurs between the gate2 and drain regions, a device with a gate2 drain-underlap length (L G2_D-underlap) of 10 nm exhibited a longer retention performance. As a result, by applying the n-doped layer and gate2 drain-underlap structure, the proposed device exhibited not only a high sensing margin of 1.11 µA/µm but also a long retention time of greater than 100 ms at a temperature of 358 K (85 °C).

Optimal inverter logic gate using 10-nm double gate-all-around (DGAA transistor with asymmetric channel width

Directory of Open Access Journals (Sweden)

Myunghwan Ryu

2016-01-01

Full Text Available We investigate the electrical characteristics of a double-gate-all-around (DGAA transistor with an asymmetric channel width using three-dimensional device simulation. The DGAA structure creates a silicon nanotube field-effect transistor (NTFET with a core-shell gate architecture, which can solve the problem of loss of gate controllability of the channel and provides improved short-channel behavior. The channel width asymmetry is analyzed on both sides of the terminals of the transistors, i.e., source and drain. In addition, we consider both n-type and p-type DGAA FETs, which are essential to forming a unit logic cell, the inverter. Simulation results reveal that, according to the carrier types, the location of the asymmetry has a different effect on the electrical properties of the devices. Thus, we propose the N/P DGAA FET structure with an asymmetric channel width to form the optimal inverter. Various electrical metrics are analyzed to investigate the benefits of the optimal inverter structure over the conventional inverter structure. Simulation results show that 27% delay and 15% leakage power improvement are enabled in the optimum structure.

Contrast-enhanced specific absorption rate-efficient 3D cardiac cine with respiratory-triggered radiofrequency gating.

Science.gov (United States)

Henningsson, Markus; Chan, Raymond H; Goddu, Beth; Goepfert, Lois A; Razavi, Reza; Botnar, Rene M; Schaeffter, Tobias; Nezafat, Reza

2013-04-01

To investigate the use of radiofrequency (RF) gating in conjunction with a paramagnetic contrast agent to reduce the specific absorption rate (SAR) and increase the blood-myocardium contrast in balanced steady-state free precession (bSSFP) 3D cardiac cine. RF gating was implemented by synchronizing the RF-excitation with an external respiratory sensor (bellows), which could additionally be used for respiratory gating. For reference, respiratory-gated 3D cine images were acquired without RF gating. Free-breathing 3D cine images were acquired in eight healthy subjects before and after contrast injection (Gd-BOPTA) and compared to breath-hold 2D cine. RF-gated 3D cine reduced the SAR by nearly 40% without introducing significant artifacts while providing left ventricle (LV) measurements similar to those obtained with 2D cine. The contrast-to-noise ratio (CNR) was significantly higher for 3D cine compared to 2D cine, both before and after contrast injection; however, no statistically significant CNR increase was observed for the postcontrast 3D cine compared to the precontrast acquisitions. Respiratory-triggered RF gating significantly reduces SAR in 3D cine acquisitions, which may enable a more widespread clinical use of 3D cine. Furthermore, CNR of 3D bSSFP cine is higher than of 2D and administration of Gd-BOPTA does not improve the CNR of 3D cine. Copyright © 2012 Wiley Periodicals, Inc.

Multiple Independent Gate FETs: How Many Gates Do We Need?

OpenAIRE

Amarù, Luca; Hills, Gage; Gaillardon, Pierre-Emmanuel; Mitra, Subhasish; De Micheli, Giovanni

2015-01-01

Multiple Independent Gate Field Effect Transistors (MIGFETs) are expected to push FET technology further into the semiconductor roadmap. In a MIGFET, supplementary gates either provide (i) enhanced conduction properties or (ii) more intelligent switching functions. In general, each additional gate also introduces a side implementation cost. To enable more efficient digital systems, MIGFETs must leverage their expressive power to realize complex logic circuits with few physical resources. Rese...

Retrospective data-driven respiratory gating for PET/CT

International Nuclear Information System (INIS)

Schleyer, Paul J; O'Doherty, Michael J; Barrington, Sally F; Marsden, Paul K

2009-01-01

Respiratory motion can adversely affect both PET and CT acquisitions. Respiratory gating allows an acquisition to be divided into a series of motion-reduced bins according to the respiratory signal, which is typically hardware acquired. In order that the effects of motion can potentially be corrected for, we have developed a novel, automatic, data-driven gating method which retrospectively derives the respiratory signal from the acquired PET and CT data. PET data are acquired in listmode and analysed in sinogram space, and CT data are acquired in cine mode and analysed in image space. Spectral analysis is used to identify regions within the CT and PET data which are subject to respiratory motion, and the variation of counts within these regions is used to estimate the respiratory signal. Amplitude binning is then used to create motion-reduced PET and CT frames. The method was demonstrated with four patient datasets acquired on a 4-slice PET/CT system. To assess the accuracy of the data-derived respiratory signal, a hardware-based signal was acquired for comparison. Data-driven gating was successfully performed on PET and CT datasets for all four patients. Gated images demonstrated respiratory motion throughout the bin sequences for all PET and CT series, and image analysis and direct comparison of the traces derived from the data-driven method with the hardware-acquired traces indicated accurate recovery of the respiratory signal.

Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

2013-12-04

We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits

Science.gov (United States)

Sporea, R. A.; Trainor, M. J.; Young, N. D.; Shannon, J. M.; Silva, S. R. P.

2014-03-01

Ultra-large-scale integrated (ULSI) circuits have benefited from successive refinements in device architecture for enormous improvements in speed, power efficiency and areal density. In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained static. Now, a device concept with fundamentally different operation, the source-gated transistor (SGT) opens the possibility of unprecedented functionality in future low-cost LAE. With its simple structure and operational characteristics of low saturation voltage, stability under electrical stress and large intrinsic gain, the SGT is ideally suited for LAE analog applications. Here, we show using measurements on polysilicon devices that these characteristics lead to substantial improvements in gain, noise margin, power-delay product and overall circuit robustness in digital SGT-based designs. These findings have far-reaching consequences, as LAE will form the technological basis for a variety of future developments in the biomedical, civil engineering, remote sensing, artificial skin areas, as well as wearable and ubiquitous computing, or lightweight applications for space exploration.

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

Science.gov (United States)

Bae, Jong-Ho; Lee, Jong-Ho

2016-05-01

A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

Electrospray ion source with reduced analyte electrochemistry

Science.gov (United States)

Kertesz, Vilmos [Knoxville, TN; Van Berkel, Gary [Clinton, TN

2011-08-23

An electrospray ion (ESI) source and method capable of ionizing an analyte molecule without oxidizing or reducing the analyte of interest. The ESI source can include an emitter having a liquid conduit, a working electrode having a liquid contacting surface, a spray tip, a secondary working electrode, and a charge storage coating covering partially or fully the liquid contacting surface of the working electrode. The liquid conduit, the working electrode and the secondary working electrode can be in liquid communication. The electrospray ion source can also include a counter electrode proximate to, but separated from, said spray tip. The electrospray ion source can also include a power system for applying a voltage difference between the working electrodes and a counter-electrode. The power system can deliver pulsed voltage changes to the working electrodes during operation of said electrospray ion source to minimize the surface potential of the charge storage coating.

Comparison between retrospective gating and ECG triggering in magnetic resonance velocity mapping

DEFF Research Database (Denmark)

Søndergaard, L; Ståhlberg, F; Thomsen, C

1993-01-01

ECG-triggered cinematographic studies of the cardiovascular system are hampered by several technical restrictions such as the inability to image end-diastole, ghosting, varying signal intensity, and phase contributions from eddy currents. Retrospective gating may solve these problems, but involves...... of flow pulses. However, by reducing the time window retrospectively gated flow measurements were in good agreement with those that are ECG triggered. When fulfilling the demand of a narrow time window for interpolation, retrospective gating offers several advantages in MR velocity mapping....

Self-aligned top-gate InGaZnO thin film transistors using SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric

Energy Technology Data Exchange (ETDEWEB)

Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Wong, Man; Kwok, Hoi Sing

2013-12-02

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) utilizing SiO{sub 2}/Al{sub 2}O{sub 3} stack thin films as gate dielectric are developed in this paper. Due to high quality of the high-k Al{sub 2}O{sub 3} and good interface between active layer and gate dielectric, the resulting a-IGZO TFT exhibits good electrical performance including field-effect mobility of 9 cm{sup 2}/Vs, threshold voltage of 2.2 V, subthreshold swing of 0.2 V/decade, and on/off current ratio of 1 × 10{sup 7}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric is proposed. • The source/drain areas are hydrogen-doped by CHF{sub 3} plasma. • The devices show good electrical performance and scaling down behavior.

Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

Science.gov (United States)

Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

2018-02-01

The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10-2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

Detection of respiratory tumour motion using intrinsic list mode-driven gating in positron emission tomography.

Science.gov (United States)

Büther, Florian; Ernst, Iris; Dawood, Mohammad; Kraxner, Peter; Schäfers, Michael; Schober, Otmar; Schäfers, Klaus P

2010-12-01

Respiratory motion of organs during PET scans is known to degrade PET image quality, potentially resulting in blurred images, attenuation artefacts and erroneous tracer quantification. List mode-based gating has been shown to reduce these pitfalls in cardiac PET. This study evaluates these intrinsic gating methods for tumour PET scans. A total of 34 patients with liver or lung tumours (14 liver tumours and 27 lung tumours in all) underwent a 15-min single-bed list mode PET scan of the tumour region. Of these, 15 patients (8 liver and 11 lung tumours in total) were monitored by a video camera registering a marker on the patient's abdomen, thus capturing the respiratory motion for PET gating (video method). Further gating information was deduced by dividing the list mode stream into 200-ms frames, determining the number of coincidences (sensitivity method) and computing the axial centre of mass of the measured count rates in the same frames (centre of mass method). Additionally, these list mode-based methods were evaluated using only coincidences originating from the tumour region by segmenting the tumour in sinogram space (segmented sensitivity/centre of mass method). Measured displacement of the tumours between end-expiration and end-inspiration and the increase in apparent uptake in the gated images served as a measure for the exactness of gating. To estimate the accuracy, a thorax phantom study with moved activity sources simulating small tumours was also performed. All methods resolved the respiratory motion with varying success. The best results were seen in the segmented centre of mass method, on average leading to larger displacements and uptake values than the other methods. The simple centre of mass method performed worse in terms of displacements due to activities moving into the field of view during the respiratory cycle. Both sensitivity- and video-based methods lead to similar results. List mode-driven PET gating, especially the segmented centre of mass

Assessment of a quantum phase-gate operation based on nonlinear optics

International Nuclear Information System (INIS)

Rebic, S.; Ottaviani, C.; Di Giuseppe, G.; Vitali, D.; Tombesi, P.

2006-01-01

We analyze in detail the proposal for a two-qubit gate for travelling single-photon qubits recently presented by Ottaviani et al. [Phys. Rev. A 73, 010301(R) (2006)]. The scheme is based on an ensemble of five-level atoms coupled to two quantum and two classical light fields. The two quantum fields undergo cross-phase modulation induced by electromagnetically induced transparency. The performance of this two-qubit quantum phase gate for travelling single-photon qubits is thoroughly examined in the steady-state and transient regimes, by means of a full quantum treatment of the system dynamics. In the steady-state regime, we find a general trade-off between the size of the conditional phase shift and the fidelity of the gate operation. However, this trade-off can be bypassed in the transient regime, where a satisfactory gate operation is found to be possible, significantly reducing the gate operation time

Fast temperature optimization of multi-source hyperthermia applicators with reduced-order modeling of 'virtual sources'

International Nuclear Information System (INIS)

Cheng, K-S; Stakhursky, Vadim; Craciunescu, Oana I; Stauffer, Paul; Dewhirst, Mark; Das, Shiva K

2008-01-01

The goal of this work is to build the foundation for facilitating real-time magnetic resonance image guided patient treatment for heating systems with a large number of physical sources (e.g. antennas). Achieving this goal requires knowledge of how the temperature distribution will be affected by changing each source individually, which requires time expenditure on the order of the square of the number of sources. To reduce computation time, we propose a model reduction approach that combines a smaller number of predefined source configurations (fewer than the number of actual sources) that are most likely to heat tumor. The source configurations consist of magnitude and phase source excitation values for each actual source and may be computed from a CT scan based plan or a simplified generic model of the corresponding patient anatomy. Each pre-calculated source configuration is considered a 'virtual source'. We assume that the actual best source settings can be represented effectively as weighted combinations of the virtual sources. In the context of optimization, each source configuration is treated equivalently to one physical source. This model reduction approach is tested on a patient upper-leg tumor model (with and without temperature-dependent perfusion), heated using a 140 MHz ten-antenna cylindrical mini-annular phased array. Numerical simulations demonstrate that using only a few pre-defined source configurations can achieve temperature distributions that are comparable to those from full optimizations using all physical sources. The method yields close to optimal temperature distributions when using source configurations determined from a simplified model of the tumor, even when tumor position is erroneously assumed to be ∼2.0 cm away from the actual position as often happens in practical clinical application of pre-treatment planning. The method also appears to be robust under conditions of changing, nonlinear, temperature-dependent perfusion. The

The value of low-dose prospective ECG-gated dual-source CT angiography in the diagnosis of coarctation of the aorta in infants and children

Energy Technology Data Exchange (ETDEWEB)

Nie, P. [Shandong Provincial Key Laboratory of Diagnosis and Treatment of Cardio-Cerebral Vascular Diseases, Shandong Medical Imaging Research Institute, Shandong University, Jinan, Shandong (China); Wang, X., E-mail: wxming369@yahoo.com.cn [Shandong Provincial Key Laboratory of Diagnosis and Treatment of Cardio-Cerebral Vascular Diseases, Shandong Medical Imaging Research Institute, Shandong University, Jinan, Shandong (China); Cheng, Z.; Duan, Y.; Ji, X. [Shandong Provincial Key Laboratory of Diagnosis and Treatment of Cardio-Cerebral Vascular Diseases, Shandong Medical Imaging Research Institute, Shandong University, Jinan, Shandong (China); Chen, J. [CT Research Collaboration, Siemens, Beijing (China); Zhang, H. [Department of Cardiovascular Surgery, Shandong Provincial Hospital, Jinan, Shandong (China)

2012-08-15

Aim: To investigate the value of prospective electrocardiogram (ECG)-gated dual-source computed tomography (DSCT) in the diagnosis of coarctation of the aorta (CoA). Materials and methods: Seventeen patients clinically suspected of having CoA underwent prospective ECG-gated DSCT angiography and transthoracic echocardiography (TTE). Surgery was performed in all patients. The diagnostic accuracy of DSCT angiography and TTE was compared with the surgical findings as the reference standard. Image quality was evaluated using a five-point scale. Effective radiation dose was calculated from the dose-length product (DLP). Results: CoA was diagnosed in 17 patients by DSCT angiography and in 16 patients by TTE. A total of 46 separate cardiovascular abnormalities were confirmed by surgical findings. The diagnostic accuracy of DSCT angiography and TTE was 96.32% and 97.06%, respectively. There was no significant difference in the diagnostic accuracy between DSCT angiography and TTE ({chi}{sup 2} = 0, p > 0.05). The mean score of image quality was 4.2 {+-} 0.8. The mean effective dose was 0.69 {+-} 0.09 mSv. Conclusion: Prospective ECG-gated DSCT with a low radiation dose is a valuable technique in the diagnosis of CoA in infants and children.

Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

Science.gov (United States)

Welte, Stephan; Hacker, Bastian; Daiss, Severin; Ritter, Stephan; Rempe, Gerhard

2018-02-01

Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2 μ s . We show an entangling operation between the two atoms by generating a Bell state with 76(2)% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6)% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8)%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

Directory of Open Access Journals (Sweden)

Stephan Welte

2018-02-01

Full Text Available Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2  μs. We show an entangling operation between the two atoms by generating a Bell state with 76(2% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

Analytical drain current formulation for gate dielectric engineered dual material gate-gate all around-tunneling field effect transistor

Science.gov (United States)

Madan, Jaya; Gupta, R. S.; Chaujar, Rishu

2015-09-01

In this work, an analytical drain current model for gate dielectric engineered (hetero dielectric)-dual material gate-gate all around tunnel field effect transistor (HD-DMG-GAA-TFET) has been developed. Parabolic approximation has been used to solve the two-dimensional (2D) Poisson equation with appropriate boundary conditions and continuity equations to evaluate analytical expressions for surface potential, electric field, tunneling barrier width and drain current. Further, the analog performance of the device is studied for three high-k dielectrics (Si3N4, HfO2, and ZrO2), and it has been investigated that the problem of lower ION, can be overcome by using the hetero-gate architecture. Moreover, the impact of scaling the gate oxide thickness and bias variations has also been studied. The HD-DMG-GAA-TFET shows an enhanced ION of the order of 10-4 A. The effectiveness of the proposed model is validated by comparing it with ATLAS device simulations.

Voltage-dependent gating in a "voltage sensor-less" ion channel.

Directory of Open Access Journals (Sweden)

Harley T Kurata

2010-02-01

Full Text Available The voltage sensitivity of voltage-gated cation channels is primarily attributed to conformational changes of a four transmembrane segment voltage-sensing domain, conserved across many levels of biological complexity. We have identified a remarkable point mutation that confers significant voltage dependence to Kir6.2, a ligand-gated channel that lacks any canonical voltage-sensing domain. Similar to voltage-dependent Kv channels, the Kir6.2[L157E] mutant exhibits time-dependent activation upon membrane depolarization, resulting in an outwardly rectifying current-voltage relationship. This voltage dependence is convergent with the intrinsic ligand-dependent gating mechanisms of Kir6.2, since increasing the membrane PIP2 content saturates Po and eliminates voltage dependence, whereas voltage activation is more dramatic when channel Po is reduced by application of ATP or poly-lysine. These experiments thus demonstrate an inherent voltage dependence of gating in a "ligand-gated" K+ channel, and thereby provide a new view of voltage-dependent gating mechanisms in ion channels. Most interestingly, the voltage- and ligand-dependent gating of Kir6.2[L157E] is highly sensitive to intracellular [K+], indicating an interaction between ion permeation and gating. While these two key features of channel function are classically dealt with separately, the results provide a framework for understanding their interaction, which is likely to be a general, if latent, feature of the superfamily of cation channels.

Applications of field-programmable gate arrays in scientific research

CERN Document Server

Sadrozinski, Hartmut F W

2011-01-01

Focusing on resource awareness in field-programmable gate array (FPGA) design, Applications of Field-Programmable Gate Arrays in Scientific Research covers the principle of FPGAs and their functionality. It explores a host of applications, ranging from small one-chip laboratory systems to large-scale applications in ""big science."" The book first describes various FPGA resources, including logic elements, RAM, multipliers, microprocessors, and content-addressable memory. It then presents principles and methods for controlling resources, such as process sequencing, location constraints, and in

Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs

Directory of Open Access Journals (Sweden)

YongHe Chen

2015-09-01

Full Text Available By comparing the Schottky diodes of different area and perimeter, reverse gate leakage current of AlGaN/GaN high mobility transistors (HEMT at gate bias beyond threshold voltage is studied. It is revealed that reverse current consists of area-related and perimeter-related current. An analytical model of electric field calculation is proposed to obtain the average electric field around the gate edge at high revers bias and estimate the effective range of edge leakage current. When the reverse bias increases, the increment of electric field is around the gate edge of a distance of ΔL, and perimeter-related gate edge current keeps increasing. By using the calculated electric field and the temperature-dependent current-voltage measurements, the edge gate leakage current mechanism is found to be Fowler-Nordheim tunneling at gate bias bellows -15V caused by the lateral extended depletion region induced barrier thinning. Effective range of edge current of Schottky diodes is about hundred to several hundred nano-meters, and is different in different shapes of Schottky diodes.

Dosimetric Analysis of Respiratory-Gated Radiotherapy for Hepatocellular Carcinoma

International Nuclear Information System (INIS)

Xi Mian; Zhang Li; Liu Mengzhong; Deng Xiaowu; Huang Xiaoyan; Liu Hui

2011-01-01

The purpose of this study was to define individualized internal target volume (ITV) for hepatocellular carcinoma (HCC) using 4D computed tomography (4DCT), and to determine the geometric and dosimetric benefits of respiratory gating. Gross tumor volumes (GTVs) were contoured on 10 respiratory phases of 4DCT images for 12 patients with HCC. Three treatment plans were prepared using different planning target volumes (PTVs): (1) PTV 3D , derived from a single helical clinical target volume (CTV) plus conventional margins; (2) PTV 10phases , derived from ITV 10phases , which encompassed all 10 CTVs plus an isotropic margin of 0.8 cm; (3) PTV gating , derived from ITV gating , which encompassed three CTVs within gating-window at end-expiration plus an isotropic margin of 0.8 cm. The PTV 3D was the largest volume for all patients. The ITV-based plans and gating plans spared more normal tissues than 3D plans, especially the liver. Without increasing normal tissue complication probability of the 3D plans, the ITV-based plans allowed for increasing the calculated dose from 50.8 Gy to 54.7 Gy on average, and the gating plans could further escalate the dose to 58.5 Gy. Compared with ITV-based plans, the dosimetric gains with gating plan strongly correlated with GTV mobility in the craniocaudal direction. The ITV-based plans can ensure target coverage with less irradiation of normal tissues compared with 3D plans. Respiratory-gated radiotherapy can further reduce the target volumes to spare more surrounding tissues and allow dose escalation, especially for patients with tumor mobility >1 cm.

Influence of gate dielectric on the ambipolar characteristics of solution-processed organic field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Ribierre, J C; Ghosh, S; Takaishi, K; Muto, T; Aoyama, T, E-mail: jcribierre@ewha.ac.kr, E-mail: taoyama@riken.jp [Advanced Science Institute, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan)

2011-05-25

Solution-processed ambipolar organic field-effect transistors based on dicyanomethylene-substituted quinoidal quaterthiophene derivative [QQT(CN)4] are fabricated using various gate dielectric materials including cross-linked polyimide and poly-4-vinylphenol. Devices with spin-coated polymeric gate dielectric layers show a reduced hysteresis in their transfer characteristics. Among the insulating polymers examined in this study, a new fluorinated polymer with a low dielectric constant of 2.8 significantly improves both hole and electron field-effect mobilities of QQT(CN)4 thin films to values as high as 0.04 and 0.002 cm{sup 2} V{sup -1} s{sup -1}. These values are close to the best mobilities obtained in QQT(CN)4 devices fabricated on SiO{sub 2} treated with octadecyltrichlorosilane. The influence of the metal used for source/drain metal electrodes on the device performance is also investigated. Whereas best device performances are achieved with gold electrodes, more balanced electron and hole field-effect mobilities could be obtained using chromium.

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

Science.gov (United States)

Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

2013-06-01

In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

International Nuclear Information System (INIS)

Rodilla, H; González, T; Mateos, J; Moschetti, G; Grahn, J

2011-01-01

In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, n s , have been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cutoff frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of n s shifts the maximum of the transconductance and intrinsic cutoff frequency to higher values of drain current and improves the agreement with the experimental results

New designs of a complete set of Photonic Crystals logic gates

Science.gov (United States)

Hussein, Hussein M. E.; Ali, Tamer A.; Rafat, Nadia H.

2018-03-01

In this paper, we introduce new designs of all-optical OR, AND, XOR, NOT, NOR, NAND and XNOR logic gates based on the interference effect. The designs are built using 2D square lattice Photonic Crystal (PhC) structure of dielectric rods embedded in air background. The lattice constant, a, and the rod radius, r, are designed to achieve maximum operating range of frequencies using the gap map. We use the Plane Wave Expansion (PWE) method to obtain the band structure and the gap map of the proposed designs. The operating wavelengths achieve a wide band range that varies between 1266.9 nm and 1996 nm with center wavelength at 1550 nm. The Finite-Difference Time-Domain (FDTD) method is used to study the field behavior inside the PhC gates. The gates satisfy their truth tables with reasonable power contrast ratio between logic '1' and logic '0'.

A low on-resistance SOI LDMOS using a trench gate and a recessed drain

International Nuclear Information System (INIS)

Ge Rui; Luo Xiaorong; Jiang Yongheng; Zhou Kun; Wang Pei; Wang Qi; Wang Yuangang; Zhang Bo; Li Zhaoji

2012-01-01

An integrable silicon-on-insulator (SOI) power lateral MOSFET with a trench gate and a recessed drain (TGRD MOSFET) is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide (BOX) and the recessed drain reduce the specific on-resistance (R on,sp ) by widening the vertical conduction area and shortening the extra current path. The trench gate is extended as a field plate improves the electric field distribution. Breakdown voltage (BV) of 97 V and R on,sp of 0.985 mΩ·cm 2 (V GS = 5 V) are obtained for a TGRD MOSFET with 6.5 μm half-cell pitch. Compared with the trench gate SOI MOSFET (TG MOSFET) and the conventional MOSFET, R on,sp of the TGRD MOSFET decreases by 46% and 83% at the same BV, respectively. Compared with the SOI MOSFET with a trench gate and a trench drain (TGTD MOSFET), BV of the TGRD MOSFET increases by 37% at the same R on,sp . (semiconductor devices)

Dosimetry applications in GATE Monte Carlo toolkit.

Science.gov (United States)

Papadimitroulas, Panagiotis

2017-09-01

Monte Carlo (MC) simulations are a well-established method for studying physical processes in medical physics. The purpose of this review is to present GATE dosimetry applications on diagnostic and therapeutic simulated protocols. There is a significant need for accurate quantification of the absorbed dose in several specific applications such as preclinical and pediatric studies. GATE is an open-source MC toolkit for simulating imaging, radiotherapy (RT) and dosimetry applications in a user-friendly environment, which is well validated and widely accepted by the scientific community. In RT applications, during treatment planning, it is essential to accurately assess the deposited energy and the absorbed dose per tissue/organ of interest, as well as the local statistical uncertainty. Several types of realistic dosimetric applications are described including: molecular imaging, radio-immunotherapy, radiotherapy and brachytherapy. GATE has been efficiently used in several applications, such as Dose Point Kernels, S-values, Brachytherapy parameters, and has been compared against various MC codes which are considered as standard tools for decades. Furthermore, the presented studies show reliable modeling of particle beams when comparing experimental with simulated data. Examples of different dosimetric protocols are reported for individualized dosimetry and simulations combining imaging and therapy dose monitoring, with the use of modern computational phantoms. Personalization of medical protocols can be achieved by combining GATE MC simulations with anthropomorphic computational models and clinical anatomical data. This is a review study, covering several dosimetric applications of GATE, and the different tools used for modeling realistic clinical acquisitions with accurate dose assessment. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Derivation of uranium residual radioactive material guidelines for the Elza Gate Site

International Nuclear Information System (INIS)

Cheng, J.J.; Yu, C.; Devgun, J.S.

1991-02-01

Residual radioactive material guidelines for uranium were derived for a large, homogeneously contaminated area at the Elza Gate Site in Oak Ridge, Tennessee. The derivation of the single-nuclide and total uranium guidelines was based on the requirement that the 50-year committed effective dose equivalent to hypothetical individual who lives or works in the immediate vicinity of the Elza Gate Site should not exceed a dose of 100 mrem/yr following decontamination. The DOE residual radioactive guideline computer code RESRAD was used in this evaluation. Four potential scenarios were considered for the site; the scenarios vary with regard to time spent at the site, sources of water used, and sources of food consumed. The results of the evaluation indicate that the basic dose limit of 100 mrem/yr will not be exceeded for uranium within 1000 years, provided that the soil concentration of uranium at the Elza Gate Site does not exceed the following levels: 1800 pCi/g for Scenario A (industrial worker: the expected scenario); 4000 pCi/g for Scenario B (recreationist: a plausible scenario); 470 pCi/g for Scenario C (resident farmer using pond water as the only water source: a possible but unlikely scenario); and 120 pCi/g for Scenario D (resident farmer using well water as the only water source: a possible but unlikely scenario). The uranium guideline applies to the total activity concentration of uranium isotopes in their natural activity concentration ratio of 1:1: 0.046. These guidelines are calculated on the basis of a dose of 100 mrem/yr. In setting the actual uranium guideline for the Elza Gate Site, the DOE will apply the as low as reasonably achievable (ALARA) policy to the decision-making process, along with other factors, such as determining whether a particular scenario is reasonable and appropriate. 10 refs., 3 figs., 7 tabs

Regional cooperation to reduce the safety and security risks of Orphan radioactive sources

International Nuclear Information System (INIS)

Howard, Geoffrey; Hacker, Celia; Murray, Allan; Romallosa, Kristine; Caseria, Estrella; Africa del Castillo, Lorena

2008-01-01

ANSTO's Regional Security of Radioactive Sources (RSRS) Project, in cooperation with the Philippine Nuclear Research Institute (PNRI), has initiated a program to reduce the safety and security risks of orphan radioactive sources in the Philippines. Collaborative work commenced in February 2006 during the Regional Orphan Source Search and Methods Workshop, co-hosted by ANSTO and the US National Nuclear Security Administration. Further professional development activities have occurred following requests by PNRI to ANSTO to support improvements in PNRI's capability and training programs to use a range of radiation survey equipment and on the planning and methods for conducting orphan source searches. The activities, methods and outcomes of the PNRI-ANSTO cooperative program are described, including: i.) Delivering a training workshop which incorporates use of source search and nuclide identification equipment and search methodology; and train-the-trainer techniques for effective development and delivery of custom designed training in the Philippines; ii.) Support and peer review of course work on Orphan Source Search Equipment and Methodology developed by PNRI Fellows; iii.) Supporting the delivery of the inaugural National Training Workshop on Orphan Source Search hosted by PNRI in the Philippines; iv.) Partnering in searching for orphan sources in Luzon, Philippines, in May 2007. The methods employed during these international cooperation activities are establishing a new model of regional engagement that emphasises sustainability of outcomes for safety and security of radioactive sources. (author)

Electrochemically-gated single-molecule electrical devices

International Nuclear Information System (INIS)

Guo, Shaoyin; Artés, Juan Manuel; Díez-Pérez, Ismael

2013-01-01

In the last decade, single-molecule electrical contacts have emerged as a new experimental platform that allows exploring charge transport phenomena in individual molecular blocks. This novel tool has evolved into an essential element within the Molecular Electronics field to understand charge transport processes in hybrid (bio)molecule/electrode interfaces at the nanoscale, and prospect the implementation of active molecular components into functional nanoscale optoelectronic devices. Within this area, three-terminal single-molecule devices have been sought, provided that they are highly desired to achieve full functionality in logic electronic circuits. Despite the latest experimental developments offer consistent methods to bridge a molecule between two electrodes (source and drain in a transistor notation), placing a third electrode (gate) close to the single-molecule electrical contact is still technically challenging. In this vein, electrochemically-gated single-molecule devices have emerged as an experimentally affordable alternative to overcome these technical limitations. In this review, the operating principle of an electrochemically-gated single-molecule device is presented together with the latest experimental methodologies to built them and characterize their charge transport characteristics. Then, an up-to-date comprehensive overview of the most prominent examples will be given, emphasizing on the relationship between the molecular structure and the final device electrical behaviour

Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors.

Science.gov (United States)

Valitova, Irina; Kumar, Prajwal; Meng, Xiang; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

2016-06-15

Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).

Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications

International Nuclear Information System (INIS)

Faramehr, Soroush; Kalna, Karol; Igić, Petar

2014-01-01

A novel enhancement mode structure, a buried gate gallium nitride (GaN) high electron mobility transistor (HEMT) with a breakdown voltage (BV) of 1400 V–4000 V for a source-to-drain spacing (L SD ) of 6 μm–32 μm, is investigated using simulations by Silvaco Atlas. The simulations are based on meticulous calibration of a conventional lateral 1 μm gate length GaN HEMT with a source-to-drain spacing of 6 μm against its experimental transfer characteristics and BV. The specific on-resistance R S for the new power transistor with the source-to-drain spacing of 6 μm showing BV = 1400 V and the source-to-drain spacing of 8 μm showing BV = 1800 V is found to be 2.3 mΩ · cm 2 and 3.5 mΩ · cm 2 , respectively. Further improvement up to BV  = 4000 V can be achieved by increasing the source-to-drain spacing to 32 μm with the specific on-resistance of R S = 35.5 mΩ · cm 2 . The leakage current in the proposed devices stays in the range of ∼5 × 10 −9 mA mm −1 . (paper)

A gate evaluation of the sources of error in quantitative90 Y PET.

Science.gov (United States)

Strydhorst, Jared; Carlier, Thomas; Dieudonné, Arnaud; Conti, Maurizio; Buvat, Irène

2016-10-01

Accurate reconstruction of the dose delivered by 90 Y microspheres using a postembolization PET scan would permit the establishment of more accurate dose-response relationships for treatment of hepatocellular carcinoma with 90 Y. However, the quality of the PET data obtained is compromised by several factors, including poor count statistics and a very high random fraction. This work uses Monte Carlo simulations to investigate what impact factors other than low count statistics have on the quantification of 90 Y PET. PET acquisitions of two phantoms-a NEMA PET phantom and the NEMA IEC PET body phantom-containing either 90 Y or 18 F were simulated using gate. Simulated projections were created with subsets of the simulation data allowing the contributions of random, scatter, and LSO background to be independently evaluated. The simulated projections were reconstructed using the commercial software for the simulated scanner, and the quantitative accuracy of the reconstruction and the contrast recovery of the reconstructed images were evaluated. The quantitative accuracy of the 90 Y reconstructions were not strongly influenced by the high random fraction present in the projection data, and the activity concentration was recovered to within 5% of the known value. The contrast recovery measured for simulated 90 Y data was slightly poorer than that for simulated 18 F data with similar count statistics. However, the degradation was not strongly linked to any particular factor. Using a more restricted energy range to reduce the random fraction in the projections had no significant effect. Simulations of 90 Y PET confirm that quantitative 90 Y is achievable with the same approach as that used for 18 F, and that there is likely very little margin for improvement by attempting to model aspects unique to 90 Y, such as the much higher random fraction or the presence of bremsstrahlung in the singles data. © 2016 American Association of Physicists in Medicine.

Method and apparatus for reducing background in inelastic gamma ray logging systems

International Nuclear Information System (INIS)

Culver, R.B.

1975-01-01

The amplified pulses from a radioactivity detector are coupled through a delay line to a linear gate. The amplified pulses from the detector are also connected to a discriminator. The output of the discriminator is AND gated in a logical gate with a clock pulse which is synchronized with a high energy neutron source. The AND gate triggers a first single shot multivibrator which in turn triggers the linear gate. The delay line allows for the time required for the detector pulse to rise to the discriminator threshold and for the propagation delay in the logic circuitry. The linear gate opens before the arrival of the detector pulse and closes after it passes through. A J-K flip-flop circuit is triggered by the trailing edge of the output of the first single shot multivibrator to disable the AND gate, thus causing the linear gate to pass only the first detected pulse having the necessary discriminator level. The output of the AND gate is OR gated with the output of a second single shot multivibrator which is triggered off the trailing edge of the clock pulse. The output of the OR gate drives a negative high voltage pulser which is connected to a negative pulsing ring in a neutron generator. The leading edge of the clock pulse drives a positive high voltage pulser which is connected to a positive pulsing ring in the neutron generator. The neutron generator is thus extinguished upon the detection of the first detector pulse occurring within the clock pulse interval having the necessary discriminator threshold. In an alternative embodiment, a second AND gate is used to gate a source control clock pulse and the output from the J-K flip-flop to provide a driving pulse for the ion source pulser. (U.S.)

Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

Science.gov (United States)

Chang, P. K.; Hwu, J. G.

2017-04-01

The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

Long-range protein electron transfer observed at the single-molecule level: In situ mapping of redox-gated tunneling resonance

DEFF Research Database (Denmark)

Chi, Qijin; Farver, O; Ulstrup, Jens

2005-01-01

on the redox potential. Maximum resonance appears around the equilibrium redox potential of azurin with an on/off current ratio of approximate to 9. Simulation analyses, based on a two-step interfacial ET model for the scanning tunneling microscopy redox process, were performed and provide quantitative......A biomimetic long-range electron transfer (ET) system consisting of the blue copper protein azurin, a tunneling barrier bridge, and a gold single-crystal electrode was designed on the basis of molecular wiring self-assembly principles. This system is sufficiently stable and sensitive in a quasi...... constants display tunneling features with distance-decay factors of 0.83 and 0.91 angstrom(-1) in H2O and D2O, respectively. Redox-gated tunneling resonance is observed in situ at the single-molecule level by using electrochemical scanning tunneling microscopy, exhibiting an asymmetric dependence...

Iterative and range test methods for an inverse source problem for acoustic waves

International Nuclear Information System (INIS)

Alves, Carlos; Kress, Rainer; Serranho, Pedro

2009-01-01

We propose two methods for solving an inverse source problem for time-harmonic acoustic waves. Based on the reciprocity gap principle a nonlinear equation is presented for the locations and intensities of the point sources that can be solved via Newton iterations. To provide an initial guess for this iteration we suggest a range test algorithm for approximating the source locations. We give a mathematical foundation for the range test and exhibit its feasibility in connection with the iteration method by some numerical examples

A gated LaBr3(Ce) detector for border protection applications

Science.gov (United States)

Etile, A.; Denis-Petit, D.; Gaudefroy, L.; Meot, V.; Roig, O.

2018-01-01

We report on the dedicated implementation of the blocking technique for a LaBr3(Ce) detector as well as associated electronics and data acquisition system for border protection applications. The detector is meant to perform delayed γ-ray spectroscopy of fission fragments produced via photofission induced by a high intensity pulsed photon beam. The gating technique avoids saturation of the detection chain during irradiation. The resulting setup allows us to successfully perform delayed γ-ray spectroscopy starting only 30 ns after the gating operation. The measured energy resolution ranges from 5% to 6.5% at 662 keV depending on the γ-ray detection time after the gating operation.

Toward spin-based Magneto Logic Gate in Graphene

Science.gov (United States)

Wen, Hua; Dery, Hanan; Amamou, Walid; Zhu, Tiancong; Lin, Zhisheng; Shi, Jing; Zutic, Igor; Krivorotov, Ilya; Sham, Lu; Kawakami, Roland

Graphene has emerged as a leading candidate for spintronic applications due to its long spin diffusion length at room temperature. A universal magnetologic gate (MLG) based on spin transport in graphene has been recently proposed as the building block of a logic circuit which could replace the current CMOS technology. This MLG has five ferromagnetic electrodes contacting a graphene channel and can be considered as two three-terminal XOR logic gates. Here we demonstrate this XOR logic gate operation in such a device. This was achieved by systematically tuning the injection current bias to balance the spin polarization efficiency of the two inputs, and offset voltage in the detection circuit to obtain binary outputs. The output is a current which corresponds to different logic states: zero current is logic `0', and nonzero current is logic `1'. We find improved performance could be achieved by reducing device size and optimizing the contacts.

Radiation-hardened gate-around n-MOSFET structure for radiation-tolerant application-specific integrated circuits

International Nuclear Information System (INIS)

Lee, Min Su; Lee, Hee Chul

2012-01-01

To overcome the total ionizing dose effect on an n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET), we designed a radiation-hardened gate-around n-MOSFET structure and evaluated it through a radiation-exposure experiment. Each test device was fabricated in a commercial 0.35-micron complementary metal-oxide-semiconductor (CMOS) process. The fabricated devices were evaluated under a total dose of 1 Mrad (Si) at a dose rate of 250 krad/h to obtain very high reliability for space electronics. The experimental results showed that the gate-around n-MOSFET structure had very good performance against 1 Mrad (Si) of gamma radiation, while the conventional n-MOSFET experienced a considerable amount of radiation-induced leakage current. Furthermore, a source follower designed with the gate-around transistor worked properly at 1 Mrad (Si) of gamma radiation while a source follower designed with the conventional n-MOSFET lost its functionality.

DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.

Science.gov (United States)

Hong, Sejun; Rana, Abu ul Hassan Sarwar; Heo, Jun-Woo; Kim, Hyun-Seok

2015-10-01

Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

Experimental study on short-circuit characteristics of the new protection circuit of insulated gate bipolar transistor

International Nuclear Information System (INIS)

Ji, In-Hwan; Choi, Young-Hwan; Ha, Min-Woo; Han, Min-Koo; Choi, Yearn-Ik

2006-01-01

A new protection circuit employing the collector to emitter voltage (V CE ) sensing scheme for short-circuit withstanding capability of the insulated gate bipolar transistor (IGBT) is proposed and verified by experimental results. Because the current path between the gate and collector can be successfully eliminated in the proposed protection circuit, the power consumption can be reduced and the gate input impedance can be increased. Previous study is limited to dc characteristics. However, experimental results show that the proposed protection circuit successfully reduces the over-current of main IGBT by 80.4% under the short-circuit condition

Expert Oracle GoldenGate

CERN Document Server

Prusinski, Ben; Chung, Richard

2011-01-01

Expert Oracle GoldenGate is a hands-on guide to creating and managing complex data replication environments using the latest in database replication technology from Oracle. GoldenGate is the future in replication technology from Oracle, and aims to be best-of-breed. GoldenGate supports homogeneous replication between Oracle databases. It supports heterogeneous replication involving other brands such as Microsoft SQL Server and IBM DB2 Universal Server. GoldenGate is high-speed, bidirectional, highly-parallelized, and makes only a light impact on the performance of databases involved in replica

Analysis of the TMI-2 source range detector response

International Nuclear Information System (INIS)

Carew, J.F.; Diamond, D.J.; Eridon, J.M.

1980-01-01

In the first few hours following the TMI-2 accident large variations (factors of 10-100) in the source range (SR) detector response were observed. The purpose of this analysis was to quantify the various effects which could contribute to these large variations. The effects evaluated included the transmission of neutrons and photons from the core to detector and the reduction in the multiplication of the Am-Be startup sources, and subsequent reduction in SR detector response, due to core voiding. A one-dimensional ANISN slab model of the TMI-2 core, core externals, pressure vessel and containment has been constructed for calculation of the SR detector response and is presented

Mono-Heteromeric Configurations of Gap Junction Channels Formed by Connexin43 and Connexin45 Reduce Unitary Conductance and Determine both Voltage Gating and Metabolic Flux Asymmetry

Directory of Open Access Journals (Sweden)

Guoqiang Zhong

2017-05-01

Full Text Available In cardiac tissues, the expression of multiple connexins (Cx40, Cx43, Cx45, and Cx30.2 is a requirement for proper development and function. Gap junctions formed by these connexins have distinct permeability and gating mechanisms. Since a single cell can express more than one connexin isoform, the formation of hetero-multimeric gap junction channels provides a tissue with an enormous repertoire of combinations to modulate intercellular communication. To study further the perm-selectivity and gating properties of channels containing Cx43 and Cx45, we studied two monoheteromeric combinations in which a HeLa cell co-transfected with Cx43 and Cx45 was paired with a cell expressing only one of these connexins. Macroscopic measurements of total conductance between cell pairs indicated a drastic reduction in total conductance for mono-heteromeric channels. In terms of Vj dependent gating, Cx43 homomeric connexons facing heteromeric connexons only responded weakly to voltage negativity. Cx45 homomeric connexons exhibited no change in Vj gating when facing heteromeric connexons. The distributions of unitary conductances (γj for both mono-heteromeric channels were smaller than predicted, and both showed low permeability to the fluorescent dyes Lucifer yellow and Rhodamine123. For both mono-heteromeric channels, we observed flux asymmetry regardless of dye charge: flux was higher in the direction of the heteromeric connexon for MhetCx45 and in the direction of the homomeric Cx43 connexon for MhetCx43. Thus, our data suggest that co-expression of Cx45 and Cx43 induces the formation of heteromeric connexons with greatly reduced permeability and unitary conductance. Furthermore, it increases the asymmetry for voltage gating for opposing connexons, and it favors asymmetric flux of molecules across the junction that depends primarily on the size (not the charge of the crossing molecules.

Mono-Heteromeric Configurations of Gap Junction Channels Formed by Connexin43 and Connexin45 Reduce Unitary Conductance and Determine both Voltage Gating and Metabolic Flux Asymmetry

Science.gov (United States)

Zhong, Guoqiang; Akoum, Nazem; Appadurai, Daniel A.; Hayrapetyan, Volodya; Ahmed, Osman; Martinez, Agustin D.; Beyer, Eric C.; Moreno, Alonso P.

2017-01-01

In cardiac tissues, the expression of multiple connexins (Cx40, Cx43, Cx45, and Cx30.2) is a requirement for proper development and function. Gap junctions formed by these connexins have distinct permeability and gating mechanisms. Since a single cell can express more than one connexin isoform, the formation of hetero-multimeric gap junction channels provides a tissue with an enormous repertoire of combinations to modulate intercellular communication. To study further the perm-selectivity and gating properties of channels containing Cx43 and Cx45, we studied two monoheteromeric combinations in which a HeLa cell co-transfected with Cx43 and Cx45 was paired with a cell expressing only one of these connexins. Macroscopic measurements of total conductance between cell pairs indicated a drastic reduction in total conductance for mono-heteromeric channels. In terms of Vj dependent gating, Cx43 homomeric connexons facing heteromeric connexons only responded weakly to voltage negativity. Cx45 homomeric connexons exhibited no change in Vj gating when facing heteromeric connexons. The distributions of unitary conductances (γj) for both mono-heteromeric channels were smaller than predicted, and both showed low permeability to the fluorescent dyes Lucifer yellow and Rhodamine123. For both mono-heteromeric channels, we observed flux asymmetry regardless of dye charge: flux was higher in the direction of the heteromeric connexon for MhetCx45 and in the direction of the homomeric Cx43 connexon for MhetCx43. Thus, our data suggest that co-expression of Cx45 and Cx43 induces the formation of heteromeric connexons with greatly reduced permeability and unitary conductance. Furthermore, it increases the asymmetry for voltage gating for opposing connexons, and it favors asymmetric flux of molecules across the junction that depends primarily on the size (not the charge) of the crossing molecules. PMID:28611680

Realization of quantum gates with multiple control qubits or multiple target qubits in a cavity

Science.gov (United States)

Waseem, Muhammad; Irfan, Muhammad; Qamar, Shahid

2015-06-01

We propose a scheme to realize a three-qubit controlled phase gate and a multi-qubit controlled NOT gate of one qubit simultaneously controlling n-target qubits with a four-level quantum system in a cavity. The implementation time for multi-qubit controlled NOT gate is independent of the number of qubit. Three-qubit phase gate is generalized to n-qubit phase gate with multiple control qubits. The number of steps reduces linearly as compared to conventional gate decomposition method. Our scheme can be applied to various types of physical systems such as superconducting qubits coupled to a resonator and trapped atoms in a cavity. Our scheme does not require adjustment of level spacing during the gate implementation. We also show the implementation of Deutsch-Joza algorithm. Finally, we discuss the imperfections due to cavity decay and the possibility of physical implementation of our scheme.

An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials.

Science.gov (United States)

Kazemi, Mohammad

2017-11-10

The spin degree of freedom in magnetic devices has been discussed widely for computing, since it could significantly reduce energy dissipation, might enable beyond Von Neumann computing, and could have applications in quantum computing. For spin-based computing to become widespread, however, energy efficient logic gates comprising as few devices as possible are required. Considerable recent progress has been reported in this area. However, proposals for spin-based logic either require ancillary charge-based devices and circuits in each individual gate or adopt principals underlying charge-based computing by employing ancillary spin-based devices, which largely negates possible advantages. Here, we show that spin-orbit materials possess an intrinsic basis for the execution of logic operations. We present a spin-orbit logic gate that performs a universal logic operation utilizing the minimum possible number of devices, that is, the essential devices required for representing the logic operands. Also, whereas the previous proposals for spin-based logic require extra devices in each individual gate to provide reconfigurability, the proposed gate is 'electrically' reconfigurable at run-time simply by setting the amplitude of the clock pulse applied to the gate. We demonstrate, analytically and numerically with experimentally benchmarked models, that the gate performs logic operations and simultaneously stores the result, realizing the 'stateful' spin-based logic scalable to ultralow energy dissipation.

Effects of combined gate and ohmic recess on GaN HEMTs

Directory of Open Access Journals (Sweden)

Sunil Kumar

2016-09-01

Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

Mechanisms of Gain Control by Voltage-Gated Channels in Intrinsically-Firing Neurons

Science.gov (United States)

Patel, Ameera X.; Burdakov, Denis

2015-01-01

Gain modulation is a key feature of neural information processing, but underlying mechanisms remain unclear. In single neurons, gain can be measured as the slope of the current-frequency (input-output) relationship over any given range of inputs. While much work has focused on the control of basal firing rates and spike rate adaptation, gain control has been relatively unstudied. Of the limited studies on gain control, some have examined the roles of synaptic noise and passive somatic currents, but the roles of voltage-gated channels present ubiquitously in neurons have been less explored. Here, we systematically examined the relationship between gain and voltage-gated ion channels in a conductance-based, tonically-active, model neuron. Changes in expression (conductance density) of voltage-gated channels increased (Ca2+ channel), reduced (K+ channels), or produced little effect (h-type channel) on gain. We found that the gain-controlling ability of channels increased exponentially with the steepness of their activation within the dynamic voltage window (voltage range associated with firing). For depolarization-activated channels, this produced a greater channel current per action potential at higher firing rates. This allowed these channels to modulate gain by contributing to firing preferentially at states of higher excitation. A finer analysis of the current-voltage relationship during tonic firing identified narrow voltage windows at which the gain-modulating channels exerted their effects. As a proof of concept, we show that h-type channels can be tuned to modulate gain by changing the steepness of their activation within the dynamic voltage window. These results show how the impact of an ion channel on gain can be predicted from the relationship between channel kinetics and the membrane potential during firing. This is potentially relevant to understanding input-output scaling in a wide class of neurons found throughout the brain and other nervous systems

Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors

International Nuclear Information System (INIS)

Goiffon, V.; Virmontois, C.; Magnan, P.; Cervantes, P.; Place, S.; Estribeau, M.; Martin-Gonthier, P.; Gaillardin, M.; Girard, S.; Paillet, P.

2012-01-01

This paper presents an investigation of Total Ionizing Dose (TID) induced dark current sources in Pinned Photodiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral shallow trench isolation does not seem to play a role in the degradation. The PPD area and a transfer gate contribution independent of the pixel dimensions appear to be the main sources of the TID induced dark current increase. This study also demonstrates that applying a negative voltage on the transfer gate during integration strongly reduces the radiation induced dark current. (authors)

An L319F mutation in transmembrane region 3 (TM3) selectively reduces sensitivity to okaramine B of the Bombyx mori l-glutamate-gated chloride channel.

Science.gov (United States)

Furutani, Shogo; Okuhara, Daiki; Hashimoto, Anju; Ihara, Makoto; Kai, Kenji; Hayashi, Hideo; Sattelle, David B; Matsuda, Kazuhiko

2017-10-01

Okaramines produced by Penicillium simplicissimum AK-40 activate l-glutamate-gated chloride channels (GluCls) and thus paralyze insects. However, the okaramine binding site on insect GluCls is poorly understood. Sequence alignment shows that the equivalent of residue Leucine319 of the okaramine B sensitive Bombyx mori (B. mori) GluCl is a phenylalanine in the okaramine B insensitive B. mori γ-aminobutyric acid-gated chloride channel of the same species. This residue is located in the third transmembrane (TM3) region, a location which in a nematode GluCl is close to the ivermectin binding site. The B. mori GluCl containing the L319F mutation retained its sensitivity to l-glutamate, but responses to ivermectin were reduced and those to okaramine B were completely blocked.

Reducing mortality risk by targeting specific air pollution sources: Suva, Fiji.

Science.gov (United States)

Isley, C F; Nelson, P F; Taylor, M P; Stelcer, E; Atanacio, A J; Cohen, D D; Mani, F S; Maata, M

2018-01-15

Health implications of air pollution vary dependent upon pollutant sources. This work determines the value, in terms of reduced mortality, of reducing ambient particulate matter (PM 2.5 : effective aerodynamic diameter 2.5μm or less) concentration due to different emission sources. Suva, a Pacific Island city with substantial input from combustion sources, is used as a case-study. Elemental concentration was determined, by ion beam analysis, for PM 2.5 samples from Suva, spanning one year. Sources of PM 2.5 have been quantified by positive matrix factorisation. A review of recent literature has been carried out to delineate the mortality risk associated with these sources. Risk factors have then been applied for Suva, to calculate the possible mortality reduction that may be achieved through reduction in pollutant levels. Higher risk ratios for black carbon and sulphur resulted in mortality predictions for PM 2.5 from fossil fuel combustion, road vehicle emissions and waste burning that surpass predictions for these sources based on health risk of PM 2.5 mass alone. Predicted mortality for Suva from fossil fuel smoke exceeds the national toll from road accidents in Fiji. The greatest benefit for Suva, in terms of reduced mortality, is likely to be accomplished by reducing emissions from fossil fuel combustion (diesel), vehicles and waste burning. Copyright © 2017. Published by Elsevier B.V.

Efficient Nonlocal M-Control and N-Target Controlled Unitary Gate Using Non-symmetric GHZ States

Science.gov (United States)

Chen, Li-Bing; Lu, Hong

2018-03-01

Efficient local implementation of a nonlocal M-control and N-target controlled unitary gate is considered. We first show that with the assistance of two non-symmetric qubit(1)-qutrit(N) Greenberger-Horne-Zeilinger (GHZ) states, a nonlocal 2-control and N-target controlled unitary gate can be constructed from 2 local two-qubit CNOT gates, 2 N local two-qutrit conditional SWAP gates, N local qutrit-qubit controlled unitary gates, and 2 N single-qutrit gates. At each target node, the two third levels of the two GHZ target qutrits are used to expose one and only one initial computational state to the local qutrit-qubit controlled unitary gate, instead of being used to hide certain states from the conditional dynamics. This scheme can be generalized straightforwardly to implement a higher-order nonlocal M-control and N-target controlled unitary gate by using M non-symmetric qubit(1)-qutrit(N) GHZ states as quantum channels. Neither the number of the additional levels of each GHZ target particle nor that of single-qutrit gates needs to increase with M. For certain realistic physical systems, the total gate time may be reduced compared with that required in previous schemes.

Real-time reconfigurable devices implemented in UV-light programmable floating-gate CMOS

Energy Technology Data Exchange (ETDEWEB)

Aunet, Snorre

2002-06-01

This dissertation describes using theory, computer simulations and laboratory measurements a new class of real time reconfigurable UV-programmable floating-gate circuits operating with current levels typically in the pA to {mu}A range, implemented in a standard double-poly CMOS technology. A new design method based on using the same basic two-MOSFET circuits extensively is proposed, meant for improving the opportunities to make larger FGUVMOS circuitry than previously reported. By using the same basic circuitry extensively, instead of different circuitry for basic digital functions, the goal is to ease UV-programming and test and save circuitry on chip and I/O-pads. Matching of circuitry should also be improved by using this approach. Compact circuitry can be made, reducing wiring and active components. Compared to earlier FGUVMOS approaches the number of transistors for implementing the CARRY' of a FULL-ADDER is reduced from 22 to 2. A complete FULL-ADDER can be implemented using only 8 transistors. 2-MOSFET circuits able to implement CARRY', NOR, NAND and INVERT functions are demonstrated by measurements on chip, working with power supply voltages ranging from 800 mV down to 93 mV. An 8-transistor FULL-ADDER might use 2500 times less energy than a FULL-ADDER implemented using standard cells in the same 0.6 {mu}m CMOS technology while running at 1 MHz. The circuits are also shown to be a new class of linear threshold elements, which is the basic building blocks of neural networks. Theory is developed as a help in the design of floating-gate circuits.

Synchronous implementation of optoelectronic NOR and XNOR logic gates using parallel synchronization of three chaotic lasers

International Nuclear Information System (INIS)

Yan Sen-Lin

2014-01-01

The parallel synchronization of three chaotic lasers is used to emulate optoelectronic logic NOR and XNOR gates via modulating the light and the current. We deduce a logical computational equation that governs the chaotic synchronization, logical input, and logical output. We construct fundamental gates based on the three chaotic lasers and define the computational principle depending on the parallel synchronization. The logic gate can be implemented by appropriately synchronizing two chaotic lasers. The system shows practicability and flexibility because it can emulate synchronously an XNOR gate, two NOR gates, and so on. The synchronization can still be deteceted when mismatches exist with a certain range. (general)

Ciguatoxins: Cyclic Polyether Modulators of Voltage-gated Iion Channel Function

Science.gov (United States)

Nicholson, Graham M.; Lewis, Richard J.

2006-01-01

Ciguatoxins are cyclic polyether toxins, derived from marine dinoflagellates, which are responsible for the symptoms of ciguatera poisoning. Ingestion of tropical and subtropical fin fish contaminated by ciguatoxins results in an illness characterised by neurological, cardiovascular and gastrointestinal disorders. The pharmacology of ciguatoxins is characterised by their ability to cause persistent activation of voltage-gated sodium channels, to increase neuronal excitability and neurotransmitter release, to impair synaptic vesicle recycling, and to cause cell swelling. It is these effects, in combination with an action to block voltage-gated potassium channels at high doses, which are believed to underlie the complex of symptoms associated with ciguatera. This review examines the sources, structures and pharmacology of ciguatoxins. In particular, attention is placed on their cellular modes of actions to modulate voltage-gated ion channels and other Na+-dependent mechanisms in numerous cell types and to current approaches for detection and treatment of ciguatera.

Motion management within two respiratory-gating windows: feasibility study of dual quasi-breath-hold technique in gated medical procedures

International Nuclear Information System (INIS)

Kim, Taeho; Kim, Siyong; Youn, Kaylin K; Park, Yang-Kyun; Keall, Paul; Lee, Rena

2014-01-01

A dual quasi-breath-hold (DQBH) technique is proposed for respiratory motion management (a hybrid technique combining breathing-guidance with breath-hold task in the middle). The aim of this study is to test a hypothesis that the DQBH biofeedback system improves both the capability of motion management and delivery efficiency. Fifteen healthy human subjects were recruited for two respiratory motion measurements (free breathing and DQBH biofeedback breathing for 15 min). In this study, the DQBH biofeedback system utilized the abdominal position obtained using an real-time position management (RPM) system (Varian Medical Systems, Palo Alto, USA) to audio-visually guide a human subject for 4 s breath-hold at EOI and 90% EOE (EOE 90% ) to improve delivery efficiency. We investigated the residual respiratory motion and the delivery efficiency (duty-cycle) of abdominal displacement within the gating window. The improvement of the abdominal motion reproducibility was evaluated in terms of cycle-to-cycle displacement variability, respiratory period and baseline drift. The DQBH biofeedback system improved the abdominal motion management capability compared to that with free breathing. With a phase based gating (mean ± std: 55  ±  5%), the averaged root mean square error (RMSE) of the abdominal displacement in the dual-gating windows decreased from 2.26 mm of free breathing to 1.16 mm of DQBH biofeedback (p-value = 0.007). The averaged RMSE of abdominal displacement over the entire respiratory cycles reduced from 2.23 mm of free breathing to 1.39 mm of DQBH biofeedback breathing in the dual-gating windows (p-value = 0.028). The averaged baseline drift dropped from 0.9 mm min −1 with free breathing to 0.09 mm min −1 with DQBH biofeedback (p-value = 0.048). The averaged duty-cycle with an 1 mm width of displacement bound increased from 15% of free breathing to 26% of DQBH biofeedback (p-value = 0.003). The study demonstrated that the DQBH

GATE V6: a major enhancement of the GATE simulation platform enabling modelling of CT and radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Jan, S; Becheva, E [DSV/I2BM/SHFJ, Commissariat a l' Energie Atomique, Orsay (France); Benoit, D; Rehfeld, N; Stute, S; Buvat, I [IMNC-UMR 8165 CNRS-Paris 7 and Paris 11 Universities, 15 rue Georges Clemenceau, 91406 Orsay Cedex (France); Carlier, T [INSERM U892-Cancer Research Center, University of Nantes, Nantes (France); Cassol, F; Morel, C [Centre de physique des particules de Marseille, CNRS-IN2P3 and Universite de la Mediterranee, Aix-Marseille II, 163, avenue de Luminy, 13288 Marseille Cedex 09 (France); Descourt, P; Visvikis, D [INSERM, U650, Laboratoire du Traitement de l' Information Medicale (LaTIM), CHU Morvan, Brest (France); Frisson, T; Grevillot, L; Guigues, L; Sarrut, D; Zahra, N [Universite de Lyon, CREATIS, CNRS UMR5220, Inserm U630, INSA-Lyon, Universite Lyon 1, Centre Leon Berard (France); Maigne, L; Perrot, Y [Laboratoire de Physique Corpusculaire, 24 Avenue des Landais, 63177 Aubiere Cedex (France); Schaart, D R [Delft University of Technology, Radiation Detection and Medical Imaging, Mekelweg 15, 2629 JB Delft (Netherlands); Pietrzyk, U, E-mail: buvat@imnc.in2p3.fr [Reseach Center Juelich, Institute of Neurosciences and Medicine and Department of Physics, University of Wuppertal (Germany)

2011-02-21

GATE (Geant4 Application for Emission Tomography) is a Monte Carlo simulation platform developed by the OpenGATE collaboration since 2001 and first publicly released in 2004. Dedicated to the modelling of planar scintigraphy, single photon emission computed tomography (SPECT) and positron emission tomography (PET) acquisitions, this platform is widely used to assist PET and SPECT research. A recent extension of this platform, released by the OpenGATE collaboration as GATE V6, now also enables modelling of x-ray computed tomography and radiation therapy experiments. This paper presents an overview of the main additions and improvements implemented in GATE since the publication of the initial GATE paper (Jan et al 2004 Phys. Med. Biol. 49 4543-61). This includes new models available in GATE to simulate optical and hadronic processes, novelties in modelling tracer, organ or detector motion, new options for speeding up GATE simulations, examples illustrating the use of GATE V6 in radiotherapy applications and CT simulations, and preliminary results regarding the validation of GATE V6 for radiation therapy applications. Upon completion of extensive validation studies, GATE is expected to become a valuable tool for simulations involving both radiotherapy and imaging.

Flow-induced vibration and flow characteristics prediction for a sliding roller gate by two-dimensional unsteady CFD simulation

Energy Technology Data Exchange (ETDEWEB)

Kim, Nak-Geun; Lee, Kye-Bock [Chungbuk National University, Cheongju (Korea, Republic of); Cho, Yong [Korea Water Resources Corporation, Daejeon (Korea, Republic of)

2017-07-15

Numerical analysis on the flow induced vibration and flow characteristics in the water gate has been carried out by 2-dimensional unsteady CFD simulation when sea water flows into the port in the river. Effect of gate opening on the frequency and the mean velocity and the vortex shedding under the water gate were studied. The streamlines were compared for various gate openings. To get the frequency spectrum, Fourier transform should be performed. Spectral analysis of the excitation force signals permitted identification of the main characteristics of the interaction process. The results show that the sources of disturbed frequency are the vortex shedding from under the water gate. As the gate opening ratio increases, the predicted vibration frequency decreases. The bottom scouring occurs for large gate opening rather than smaller one. The unstable operation conditions can be estimated by using the CFD results and the Strouhal number results for various gate opening gaps.

Flow-induced vibration and flow characteristics prediction for a sliding roller gate by two-dimensional unsteady CFD simulation

International Nuclear Information System (INIS)

Kim, Nak-Geun; Lee, Kye-Bock; Cho, Yong

2017-01-01

Numerical analysis on the flow induced vibration and flow characteristics in the water gate has been carried out by 2-dimensional unsteady CFD simulation when sea water flows into the port in the river. Effect of gate opening on the frequency and the mean velocity and the vortex shedding under the water gate were studied. The streamlines were compared for various gate openings. To get the frequency spectrum, Fourier transform should be performed. Spectral analysis of the excitation force signals permitted identification of the main characteristics of the interaction process. The results show that the sources of disturbed frequency are the vortex shedding from under the water gate. As the gate opening ratio increases, the predicted vibration frequency decreases. The bottom scouring occurs for large gate opening rather than smaller one. The unstable operation conditions can be estimated by using the CFD results and the Strouhal number results for various gate opening gaps.

Seasonal source-sink dynamics at the edge of a species' range

Science.gov (United States)

Kanda, L.L.; Fuller, T.K.; Sievert, P.R.; Kellogg, R.L.

2009-01-01

The roles of dispersal and population dynamics in determining species' range boundaries recently have received theoretical attention but little empirical work. Here we provide data on survival, reproduction, and movement for a Virginia opossum (Didelphis virginiana) population at a local distributional edge in central Massachusetts (USA). Most juvenile females that apparently exploited anthropogenic resources survived their first winter, whereas those using adjacent natural resources died of starvation. In spring, adult females recolonized natural areas. A life-table model suggests that a population exploiting anthropogenic resources may grow, acting as source to a geographically interlaced sink of opossums using only natural resources, and also providing emigrants for further range expansion to new human-dominated landscapes. In a geographical model, this source-sink dynamic is consistent with the local distribution identified through road-kill surveys. The Virginia opossum's exploitation of human resources likely ameliorates energetically restrictive winters and may explain both their local distribution and their northward expansion in unsuitable natural climatic regimes. Landscape heterogeneity, such as created by urbanization, may result in source-sink dynamics at highly localized scales. Differential fitness and individual dispersal movements within local populations are key to generating regional distributions, and thus species ranges, that exceed expectations. ?? 2009 by the Ecological Society of America.

Seasonal source-sink dynamics at the edge of a species' range.

Science.gov (United States)

Kanda, L Leann; Fuller, Todd K; Sievert, Paul R; Kellogg, Robert L

2009-06-01

The roles of dispersal and population dynamics in determining species' range boundaries recently have received theoretical attention but little empirical work. Here we provide data on survival, reproduction, and movement for a Virginia opossum (Didelphis virginiana) population at a local distributional edge in central Massachusetts (USA). Most juvenile females that apparently exploited anthropogenic resources survived their first winter, whereas those using adjacent natural resources died of starvation. In spring, adult females recolonized natural areas. A life-table model suggests that a population exploiting anthropogenic resources may grow, acting as source to a geographically interlaced sink of opossums using only natural resources, and also providing emigrants for further range expansion to new human-dominated landscapes. In a geographical model, this source-sink dynamic is consistent with the local distribution identified through road-kill surveys. The Virginia opossum's exploitation of human resources likely ameliorates energetically restrictive winters and may explain both their local distribution and their northward expansion in unsuitable natural climatic regimes. Landscape heterogeneity, such as created by urbanization, may result in source-sink dynamics at highly localized scales. Differential fitness and individual dispersal movements within local populations are key to generating regional distributions, and thus species ranges, that exceed expectations.

Experimental study of single event burnout and single event gate rupture in power MOSFETs and IGBT

International Nuclear Information System (INIS)

Tang Benqi; Wang Yanping; Geng Bin

2001-01-01

An experimental study was carried out to determine the single event burnout and single event gate rupture sensitivities in power MOSFETs and IGBT which were exposed to heavy ions from 252 Cf source. The test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism were presented. Current measurements have been performed with a specially designed circuit. The test results include the observed dependence upon applied drain or gate to source bias and versus with external capacitors and limited resistors

Rapid Thermal Chemical Vapor Deposition for Dual-Gated Sub-100 nm MOSFET's

National Research Council Canada - National Science Library

Sturm, James

2001-01-01

.... The scaling of vertical p-channel MOSFET's with the source and drain doped with boron during low temperature epitaxy is limited by the diffusion of boron during subsequent side wall gate oxidation...

Reduced energy consumption for melting in foundries

Energy Technology Data Exchange (ETDEWEB)

Skov-Hansen, S.

2007-09-15

By improving the gating technology in traditional gating systems it is possible to reduce the amount of metal to be re-melted, and hence reduce the energy consumption for melting in foundries. Traditional gating systems are known for a straight tapered down runner a well base and 90 deg. bends in the runner system. In the streamlined gating systems there are no sharp changes in direction and a large effort is done to confine and control the flow of the molten metal during mould filling. Experiments in real production lines have proven that using streamlined gating systems improves yield by decreasing the poured weight compared to traditional layouts. In a layout for casting of valve housings in a vertically parted mould the weight of the gating system was reduced by 1,1kg which is a 20% weight reduction for the gating system. In a layout for horizontally parted moulds the weight of the gating system has been reduced by 3,7kg which is a weight reduction of 60% for the gating system. The experiments casting valve housings in ductile iron also proved that it is possible to lower the pouring temperature from 1400 deg. C to 1300 deg. C without the risk of cold runs. Glass plate fronted moulds have been used to study the flow of melt during mould filling. These experiments have also been used for studying the flow pattern when ceramic filters are used. The thorough study of the use of filters revealed that the metal passing through the filter is divided into a number of small jets. This proves that filters do not have the claimed positive effect on the flow of metal. The volumes necessary on either side of the filter is not filled till a backpressure is build up and results in formation of pressure shocks when backfilled. These pressure shocks result in more turbulence inside the casting than the same gating system with no filter. Not using filters can mean a reduction in poured weight of 0,6kg. To examine if the experiments using glass plate fronted moulds give

Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region

Science.gov (United States)

Naderi, Ali

2016-01-01

A new structure for graphene nanoribbon field-effect transistors (GNRFETs) is proposed and investigated using quantum simulation with a nonequilibrium Green's function (NEGF) method. Tunneling leakage current and ambipolar conduction are known effects for MOSFET-like GNRFETs. To minimize these issues a novel structure with a simple change of the GNRFETs by using single halo pocket in the intrinsic channel region, "Single Halo GNRFET (SH-GNRFET)", is proposed. An appropriate halo pocket at source side of channel is used to modify potential distribution of the gate region and weaken band to band tunneling (BTBT). In devices with materials like Si in channel region, doping type of halo and source/drain regions are different. But, here, due to the smaller bandgap of graphene, the mentioned doping types should be the same to reduce BTBT. Simulations have shown that in comparison with conventional GNRFET (C-GNRFET), an SH-GNRFET with appropriately halo doping results in a larger ON current (Ion), smaller OFF current (Ioff), a larger ON-OFF current ratio (Ion/Ioff), superior ambipolar characteristics, a reduced power-delay product and lower delay time.

Evaluation of stochastic differential equation approximation of ion channel gating models.

Science.gov (United States)

Bruce, Ian C

2009-04-01

Fox and Lu derived an algorithm based on stochastic differential equations for approximating the kinetics of ion channel gating that is simpler and faster than "exact" algorithms for simulating Markov process models of channel gating. However, the approximation may not be sufficiently accurate to predict statistics of action potential generation in some cases. The objective of this study was to develop a framework for analyzing the inaccuracies and determining their origin. Simulations of a patch of membrane with voltage-gated sodium and potassium channels were performed using an exact algorithm for the kinetics of channel gating and the approximate algorithm of Fox & Lu. The Fox & Lu algorithm assumes that channel gating particle dynamics have a stochastic term that is uncorrelated, zero-mean Gaussian noise, whereas the results of this study demonstrate that in many cases the stochastic term in the Fox & Lu algorithm should be correlated and non-Gaussian noise with a non-zero mean. The results indicate that: (i) the source of the inaccuracy is that the Fox & Lu algorithm does not adequately describe the combined behavior of the multiple activation particles in each sodium and potassium channel, and (ii) the accuracy does not improve with increasing numbers of channels.

Design and optimization analysis of dual material gate on DG-IMOS

Science.gov (United States)

Singh, Sarabdeep; Raman, Ashish; Kumar, Naveen

2017-12-01

An impact ionization MOSFET (IMOS) is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope (SS) of conventional MOSFET at room temperature. In this work, first, the device performance of the p-type double gate impact ionization MOSFET (DG-IMOS) is optimized by adjusting the device design parameters. The adjusted parameters are ratio of gate and intrinsic length, gate dielectric thickness and gate work function. Secondly, the DMG (dual material gate) DG-IMOS is proposed and investigated. This DMG DG-IMOS is further optimized to obtain the best possible performance parameters. Simulation results reveal that DMG DG-IMOS when compared to DG-IMOS, shows better I ON, I ON/I OFF ratio, and RF parameters. Results show that by properly tuning the lengths of two materials at a ratio of 1.5 in DMG DG-IMOS, optimized performance is achieved including I ON/I OFF ratio of 2.87 × 109 A/μm with I ON as 11.87 × 10-4 A/μm and transconductance of 1.06 × 10-3 S/μm. It is analyzed that length of drain side material should be greater than the length of source side material to attain the higher transconductance in DMG DG-IMOS.

Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement

Science.gov (United States)

Poorvasha, S.; Lakshmi, B.

2018-05-01

In this paper, RF performance analysis of InAs-based double gate (DG) tunnel field effect transistors (TFETs) is investigated in both qualitative and quantitative fashion. This investigation is carried out by varying the geometrical and doping parameters of TFETs to extract various RF parameters, unity gain cut-off frequency (f t), maximum oscillation frequency (f max), intrinsic gain and admittance (Y) parameters. An asymmetric gate oxide is introduced in the gate-drain overlap and compared with that of DG TFETs. Higher ON-current (I ON) of about 0.2 mA and less leakage current (I OFF) of 29 fA is achieved for DG TFET with gate-drain overlap. Due to increase in transconductance (g m), higher f t and intrinsic gain is attained for DG TFET with gate-drain overlap. Higher f max of 985 GHz is obtained for drain doping of 5 × 1017 cm‑3 because of the reduced gate-drain capacitance (C gd) with DG TFET with gate-drain overlap. In terms of Y-parameters, gate oxide thickness variation offers better performance due to the reduced values of C gd. A second order numerical polynomial model is generated for all the RF responses as a function of geometrical and doping parameters. The simulation results are compared with this numerical model where the predicted values match with the simulated values. Project supported by the Department of Science and Technology, Government of India under SERB Scheme (No. SERB/F/2660).

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

Science.gov (United States)

Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

2009-08-01

This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

Automatic cardiac gating of small-animal PET from list-mode data

Energy Technology Data Exchange (ETDEWEB)

Herraiz, J.L.; Udias, J.M. [Universidad Complutense de Madrid Univ. (Spain). Grupo de Fisica Nuclear; Vaquero, J.J.; Desco, M. [Universidad Carlos III de Madrid (Spain). Dept. de Bioingenieria e Ingenieria Aeroespacial; Cusso, L. [Hospital General Universitario Gregorio Maranon, Madrid (Spain). Unidad de Medicina y Cirugia Experimental

2011-07-01

This work presents a method to obtain automatically the cardiac gating signal in a PET study of rats, by employing the variation with time of the counts in the cardiac region, that can be extracted from list-mode data. In an initial step, the cardiac region is identified in the image space by backward-projecting a small fraction of the acquired data and studying the variation with time of the counts in each voxel inside said region, with frequencies within 2 and 8 Hz. The region obtained corresponds accurately to the left-ventricle of the heart of the rat. In a second step, the lines-of-response (LORs) connected with this region are found by forward-projecting this region. The time variation of the number of counts in these LORs contains the cardiac motion information that we want to extract. This variation of counts with time is band-pass filtered to reduce noise, and the time signal so obtained is used to create the gating signal. The result was compared with a cardiac gating signal obtained from an ECG acquired simultaneously to the PET study. Reconstructed gated images obtained from both gating information are similar. The method proposed demonstrates that valid cardiac gating signals can be obtained for rats from PET list-mode data. (orig.)

The mechanism of fast-gate opening in ClC-0.

Science.gov (United States)

Engh, Anita M; Faraldo-Gómez, José D; Maduke, Merritt

2007-10-01

ClC-0 is a chloride channel whose gating is sensitive to both voltage and chloride. Based on analysis of gating kinetics using single-channel recordings, a five-state model was proposed to describe the dependence of ClC-0 fast-gate opening on voltage and external chloride (Chen, T.-Y., and C. Miller. 1996. J. Gen. Physiol. 108:237-250). We aimed to use this five-state model as a starting point for understanding the structural changes that occur during gating. Using macroscopic patch recordings, we were able to reproduce the effects of voltage and chloride that were reported by Chen and Miller and to fit our opening rate constant data to the five-state model. Upon further analysis of both our data and those of Chen and Miller, we learned that in contrast to their conclusions, (a) the features in the data are not adequate to rule out a simpler four-state model, and (b) the chloride-binding step is voltage dependent. In order to be able to evaluate the effects of mutants on gating (described in the companion paper, see Engh et al. on p. 351 of this issue), we developed a method for determining the error on gating model parameters, and evaluated the sources of this error. To begin to mesh the kinetic model(s) with the known CLC structures, a model of ClC-0 was generated computationally based on the X-ray crystal structure of the prokaryotic homolog ClC-ec1. Analysis of pore electrostatics in this homology model suggests that at least two of the conclusions derived from the gating kinetics analysis are consistent with the known CLC structures: (1) chloride binding is necessary for channel opening, and (2) chloride binding to any of the three known chloride-binding sites must be voltage dependent.

DATABASE OF MIGRATION AND REPLICATION WITH ORACLE GOLDEN GATE

Directory of Open Access Journals (Sweden)

Suharjito Suharjito

2014-10-01

Full Text Available The main goal of this research is to analyze and design a database configuration of migration and replication in PT Metro Batavia. Research methodologies used in this research are data collecting, analysis and design model. Data collecting method is conducted with library research and direct survey in the company. Analysis method is conducted by analyzing hangar system, migration and reflection process and the available problems. Design method is conducted by designing a prototype for migration process with the implementation of Oracle SQL Developer and replication process with implementation of Oracle Golden Gate. The result of this research is a prototype for configuration of migration and replication process by using Oracle Golden Gate, which can produce two sets of identical data for the purpose of backup and recovery, and also design a simple tool that is expected to help active-active or active-passive replication process. The conclusion of this research is migration process of MySQL database to Oracle database by using Oracle Golden Gate hasn’t been conducted, because Oracle Golden Gate still has bug related to binary log, so database of migration is conducted by using Oracle Golden Gate. However, replication of bi-directional in between database of Oracle by using Oracle SQL Developer can guarantee data availability and reduce work burden from primary database.

New opening hours of the gates

CERN Multimedia

GS Department

2009-01-01

Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

Science.gov (United States)

Hattori, Junichi; Fukuda, Koichi; Ikegami, Tsutomu; Ota, Hiroyuki; Migita, Shinji; Asai, Hidehiro; Toriumi, Akira

2018-04-01

We study the effects of fringing electric fields on the behavior of negative-capacitance (NC) field-effect transistors (FETs) with a silicon-on-insulator body and a gate stack consisting of an oxide film, an internal metal film, a ferroelectric film, and a gate electrode using our own device simulator that can properly handle the complicated relationship between the polarization and the electric field in ferroelectric materials. The behaviors of such NC FETs and the corresponding metal-oxide-semiconductor (MOS) FETs are simulated and compared with each other to evaluate the effects of the NC of the ferroelectric film. Then, the fringing field effects are evaluated by comparing the NC effects in NC FETs with and without gate spacers. The fringing field between the gate stack, especially the internal metal film, and the source/drain region induces more charges at the interface of the film with the ferroelectric film. Accordingly, the function of the NC to modulate the gate voltage and the resulting function to improve the subthreshold swing are enhanced. We also investigate the relationships of these fringing field effects to the drain voltage and four design parameters of NC FETs, i.e., gate length, gate spacer permittivity, internal metal film thickness, and oxide film thickness.

Abstract probabilistic CNOT gate model based on double encoding: study of the errors and physical realizability

Science.gov (United States)

Gueddana, Amor; Attia, Moez; Chatta, Rihab

2015-03-01

In this work, we study the error sources standing behind the non-perfect linear optical quantum components composing a non-deterministic quantum CNOT gate model, which performs the CNOT function with a success probability of 4/27 and uses a double encoding technique to represent photonic qubits at the control and the target. We generalize this model to an abstract probabilistic CNOT version and determine the realizability limits depending on a realistic range of the errors. Finally, we discuss physical constraints allowing the implementation of the Asymmetric Partially Polarizing Beam Splitter (APPBS), which is at the heart of correctly realizing the CNOT function.

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Science.gov (United States)

Boomer, Kristen; Hammoud, Ahmad

2015-01-01

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Logic reversibility and thermodynamic irreversibility demonstrated by DNAzyme-based Toffoli and Fredkin logic gates.

Science.gov (United States)

Orbach, Ron; Remacle, Françoise; Levine, R D; Willner, Itamar

2012-12-26

The Toffoli and Fredkin gates were suggested as a means to exhibit logic reversibility and thereby reduce energy dissipation associated with logic operations in dense computing circuits. We present a construction of the logically reversible Toffoli and Fredkin gates by implementing a library of predesigned Mg(2+)-dependent DNAzymes and their respective substrates. Although the logical reversibility, for which each set of inputs uniquely correlates to a set of outputs, is demonstrated, the systems manifest thermodynamic irreversibility originating from two quite distinct and nonrelated phenomena. (i) The physical readout of the gates is by fluorescence that depletes the population of the final state of the machine. This irreversible, heat-releasing process is needed for the generation of the output. (ii) The DNAzyme-powered logic gates are made to operate at a finite rate by invoking downhill energy-releasing processes. Even though the three bits of Toffoli's and Fredkin's logically reversible gates manifest thermodynamic irreversibility, we suggest that these gates could have important practical implication in future nanomedicine.

Quantifying the impact of respiratory-gated 4D CT acquisition on thoracic image quality: A digital phantom study

International Nuclear Information System (INIS)

Bernatowicz, K.; Knopf, A.; Lomax, A.; Keall, P.; Kipritidis, J.; Mishra, P.

2015-01-01

Purpose: Prospective respiratory-gated 4D CT has been shown to reduce tumor image artifacts by up to 50% compared to conventional 4D CT. However, to date no studies have quantified the impact of gated 4D CT on normal lung tissue imaging, which is important in performing dose calculations based on accurate estimates of lung volume and structure. To determine the impact of gated 4D CT on thoracic image quality, the authors developed a novel simulation framework incorporating a realistic deformable digital phantom driven by patient tumor motion patterns. Based on this framework, the authors test the hypothesis that respiratory-gated 4D CT can significantly reduce lung imaging artifacts. Methods: Our simulation framework synchronizes the 4D extended cardiac torso (XCAT) phantom with tumor motion data in a quasi real-time fashion, allowing simulation of three 4D CT acquisition modes featuring different levels of respiratory feedback: (i) “conventional” 4D CT that uses a constant imaging and couch-shift frequency, (ii) “beam paused” 4D CT that interrupts imaging to avoid oversampling at a given couch position and respiratory phase, and (iii) “respiratory-gated” 4D CT that triggers acquisition only when the respiratory motion fulfills phase-specific displacement gating windows based on prescan breathing data. Our framework generates a set of ground truth comparators, representing the average XCAT anatomy during beam-on for each of ten respiratory phase bins. Based on this framework, the authors simulated conventional, beam-paused, and respiratory-gated 4D CT images using tumor motion patterns from seven lung cancer patients across 13 treatment fractions, with a simulated 5.5 cm 3 spherical lesion. Normal lung tissue image quality was quantified by comparing simulated and ground truth images in terms of overall mean square error (MSE) intensity difference, threshold-based lung volume error, and fractional false positive/false negative rates. Results: Averaged

Quantifying the impact of respiratory-gated 4D CT acquisition on thoracic image quality: A digital phantom study

Energy Technology Data Exchange (ETDEWEB)

Bernatowicz, K., E-mail: kingab@student.ethz.ch; Knopf, A.; Lomax, A. [Center for Proton Therapy, Paul Scherrer Institute, Villigen PSI 5232, Switzerland and Department of Physics, ETH Zürich, Zürich 8092 (Switzerland); Keall, P.; Kipritidis, J., E-mail: john.kipritidis@sydney.edu.au [Radiation Physics Laboratory, Sydney Medical School, University of Sydney, Sydney, NSW 2006 (Australia); Mishra, P. [Brigham and Womens Hospital, Dana-Farber Cancer Institute and Harvard Medical School, Boston, Massachusetts 02115 (United States)

2015-01-15

Purpose: Prospective respiratory-gated 4D CT has been shown to reduce tumor image artifacts by up to 50% compared to conventional 4D CT. However, to date no studies have quantified the impact of gated 4D CT on normal lung tissue imaging, which is important in performing dose calculations based on accurate estimates of lung volume and structure. To determine the impact of gated 4D CT on thoracic image quality, the authors developed a novel simulation framework incorporating a realistic deformable digital phantom driven by patient tumor motion patterns. Based on this framework, the authors test the hypothesis that respiratory-gated 4D CT can significantly reduce lung imaging artifacts. Methods: Our simulation framework synchronizes the 4D extended cardiac torso (XCAT) phantom with tumor motion data in a quasi real-time fashion, allowing simulation of three 4D CT acquisition modes featuring different levels of respiratory feedback: (i) “conventional” 4D CT that uses a constant imaging and couch-shift frequency, (ii) “beam paused” 4D CT that interrupts imaging to avoid oversampling at a given couch position and respiratory phase, and (iii) “respiratory-gated” 4D CT that triggers acquisition only when the respiratory motion fulfills phase-specific displacement gating windows based on prescan breathing data. Our framework generates a set of ground truth comparators, representing the average XCAT anatomy during beam-on for each of ten respiratory phase bins. Based on this framework, the authors simulated conventional, beam-paused, and respiratory-gated 4D CT images using tumor motion patterns from seven lung cancer patients across 13 treatment fractions, with a simulated 5.5 cm{sup 3} spherical lesion. Normal lung tissue image quality was quantified by comparing simulated and ground truth images in terms of overall mean square error (MSE) intensity difference, threshold-based lung volume error, and fractional false positive/false negative rates. Results

Development and characterization of vertical double-gate MOS field-effect transistors

International Nuclear Information System (INIS)

Trellenkamp, S.

2004-07-01

Planar MOS-field-effect transistors are common devices today used by the computer industry. When their miniaturization reaches its limit, alternate transistor concepts become necessary. In this thesis the development of vertical Double-Gate-MOS-field-effect transistors is presented. These types of transistors have a vertically aligned p-n-p junction (or n-p-n junction, respectively). Consequently, the source-drain current flows perpendicular with respect to the surface of the wafer. A Double-Gate-field-effect transistor is characterized by a very thin channel region framed by two parallel gates. Due to the symmetry of the structure and less bulk volume better gate control and hence better short channel behavior is expected, as well as an improved scaling potential. Nanostructuring of the transistor's active region is very challenging. Approximately 300 nm high and down to 30 nm wide silicon ridges are requisite. They can be realized using hydrogen silsesquioxane (HSQ) as inorganic high resolution resist for electron beam lithography. Structures defined in HSQ are then transferred with high anisotropy and selectivity into silicon using ICP-RIE (reactive ion etching with inductive coupled plasma). 25 nm wide and 330 nm high silicon ridges are achieved. Different transistor layouts are realized. The channel length is defined by epitaxial growth of doped silicon layers before or by ion implantation after nanostructuring, respectively. The transistors show source-drain currents up to 380 μA/μm and transconductances up to 480 μS/μm. Improved short channel behavior for decreasing width of the silicon ridges is demonstrated. (orig.)

Gating based on internal/external signals with dynamic correlation updates

International Nuclear Information System (INIS)

Wu Huanmei; Zhao Qingya; Berbeco, Ross I; Nishioka, Seiko; Shirato, Hiroki; Jiang, Steve B

2008-01-01

Precise localization of mobile tumor positions in real time is critical to the success of gated radiotherapy. Tumor positions are usually derived from either internal or external surrogates. Fluoroscopic gating based on internal surrogates, such as implanted fiducial markers, is accurate however requiring a large amount of imaging dose. Gating based on external surrogates, such as patient abdominal surface motion, is non-invasive however less accurate due to the uncertainty in the correlation between tumor location and external surrogates. To address these complications, we propose to investigate an approach based on hybrid gating with dynamic internal/external correlation updates. In this approach, the external signal is acquired at high frequency (such as 30 Hz) while the internal signal is sparsely acquired (such as 0.5 Hz or less). The internal signal is used to validate and update the internal/external correlation during treatment. Tumor positions are derived from the external signal based on the newly updated correlation. Two dynamic correlation updating algorithms are introduced. One is based on the motion amplitude and the other is based on the motion phase. Nine patients with synchronized internal/external motion signals are simulated retrospectively to evaluate the effectiveness of hybrid gating. The influences of different clinical conditions on hybrid gating, such as the size of gating windows, the optimal timing for internal signal acquisition and the acquisition frequency are investigated. The results demonstrate that dynamically updating the internal/external correlation in or around the gating window will reduce false positive with relatively diminished treatment efficiency. This improvement will benefit patients with mobile tumors, especially greater for early stage lung cancers, for which the tumors are less attached or freely floating in the lung.

Gating based on internal/external signals with dynamic correlation updates

Energy Technology Data Exchange (ETDEWEB)

Wu Huanmei [Purdue School of Engineering and Technology, Indiana University School of Informatics, IUPUI, Indianapolis, IN (United States); Zhao Qingya [School of Health Sciences, Purdue University, West Lafayette, IN (United States); Berbeco, Ross I [Department of Radiation Oncology, Dana-Farber/Brigham and Womens Cancer Center and Harvard Medical School, Boston, MA (United States); Nishioka, Seiko [NTT East-Japan Sapporo Hospital, Sapporo (Japan); Shirato, Hiroki [Hokkaido University Graduate School of Medicine, Sapporo (Japan); Jiang, Steve B [Department of Radiation Oncology, School of Medicine, University of California, San Diego, CA (United States)], E-mail: hw9@iupui.edu, E-mail: sbjiang@ucsd.edu

2008-12-21

Precise localization of mobile tumor positions in real time is critical to the success of gated radiotherapy. Tumor positions are usually derived from either internal or external surrogates. Fluoroscopic gating based on internal surrogates, such as implanted fiducial markers, is accurate however requiring a large amount of imaging dose. Gating based on external surrogates, such as patient abdominal surface motion, is non-invasive however less accurate due to the uncertainty in the correlation between tumor location and external surrogates. To address these complications, we propose to investigate an approach based on hybrid gating with dynamic internal/external correlation updates. In this approach, the external signal is acquired at high frequency (such as 30 Hz) while the internal signal is sparsely acquired (such as 0.5 Hz or less). The internal signal is used to validate and update the internal/external correlation during treatment. Tumor positions are derived from the external signal based on the newly updated correlation. Two dynamic correlation updating algorithms are introduced. One is based on the motion amplitude and the other is based on the motion phase. Nine patients with synchronized internal/external motion signals are simulated retrospectively to evaluate the effectiveness of hybrid gating. The influences of different clinical conditions on hybrid gating, such as the size of gating windows, the optimal timing for internal signal acquisition and the acquisition frequency are investigated. The results demonstrate that dynamically updating the internal/external correlation in or around the gating window will reduce false positive with relatively diminished treatment efficiency. This improvement will benefit patients with mobile tumors, especially greater for early stage lung cancers, for which the tumors are less attached or freely floating in the lung.

Intrinsic respiratory gating in small-animal CT

International Nuclear Information System (INIS)

Bartling, Soenke H.; Dinkel, Julien; Kauczor, Hans-Ulrich; Stiller, Wolfram; Semmler, Wolfhard; Grasruck, Michael; Madisch, Ijad; Gupta, Rajiv; Kiessling, Fabian

2008-01-01

Gating in small-animal CT imaging can compensate artefacts caused by physiological motion during scanning. However, all published gating approaches for small animals rely on additional hardware to derive the gating signals. In contrast, in this study a novel method of intrinsic respiratory gating of rodents was developed and tested for mice (n=5), rats (n=5) and rabbits (n=2) in a flat-panel cone-beam CT system. In a consensus read image quality was compared with that of non-gated and retrospective extrinsically gated scans performed using a pneumatic cushion. In comparison to non-gated images, image quality improved significantly using intrinsic and extrinsic gating. Delineation of diaphragm and lung structure improved in all animals. Image quality of intrinsically gated CT was judged to be equivalent to extrinsically gated ones. Additionally 4D datasets were calculated using both gating methods. Values for expiratory, inspiratory and tidal lung volumes determined with the two gating methods were comparable and correlated well with values known from the literature. We could show that intrinsic respiratory gating in rodents makes additional gating hardware and preparatory efforts superfluous. This method improves image quality and allows derivation of functional data. Therefore it bears the potential to find wide applications in small-animal CT imaging. (orig.)

Activity of Palythoa caribaeorum Venom on Voltage-Gated Ion Channels in Mammalian Superior Cervical Ganglion Neurons.

Science.gov (United States)

Lazcano-Pérez, Fernando; Castro, Héctor; Arenas, Isabel; García, David E; González-Muñoz, Ricardo; Arreguín-Espinosa, Roberto

2016-05-05

The Zoanthids are an order of cnidarians whose venoms and toxins have been poorly studied. Palythoa caribaeorum is a zoanthid commonly found around the Mexican coastline. In this study, we tested the activity of P. caribaeorum venom on voltage-gated sodium channel (NaV1.7), voltage-gated calcium channel (CaV2.2), the A-type transient outward (IA) and delayed rectifier (IDR) currents of KV channels of the superior cervical ganglion (SCG) neurons of the rat. These results showed that the venom reversibly delays the inactivation process of voltage-gated sodium channels and inhibits voltage-gated calcium and potassium channels in this mammalian model. The compounds responsible for these effects seem to be low molecular weight peptides. Together, these results provide evidence for the potential use of zoanthids as a novel source of cnidarian toxins active on voltage-gated ion channels.

Alstom Francis Turbine Ring Gates: from Retrofitting to Commissioning

Science.gov (United States)

A, Nguyen P.; G, Labrecque; M-O, Thibault; M, Bergeron; A, Steinhilber; D, Havard

2014-03-01

The Ring Gate synchronisation system developed by Alstom is new and patented. It uses hydraulic cylinders connected in pairs by a serial connection. The new hydraulic synchronisation system, when compared to the previous mechanical synchronisation system, has several advantages. It is a compact design; it reduces the number of mechanical components as well as maintenance costs. The new system maintains the Ring Gates robustness. The new approach is an evolution from mechanical to hydraulic synchronization assisted by electronic control. The new synchronization system eliminates several mechanical components that used to add wear and friction and which are usually difficult to adjust during maintenance. Tension chains and sprockets and associated controls are eliminated. Through the position sensors, the redundancy of the ring gate synchronization system makes it predictable and reliable. The electronic control compensates for any variation in operation, for example a leak in the hydraulic system. An emergency closing is possible without the electronic control system due to the stiffness of hydraulic serial connection in the hydraulic cylinder pairs. The Ring Gate can work safely against uneven loads and frictions. The development will be reviewed and its application discussed through commissioning results.

Alstom Francis Turbine Ring Gates: from Retrofitting to Commissioning

International Nuclear Information System (INIS)

Nguyen P A; Labrecque G; Thibault M-O; Bergeron M; Steinhilber A; Havard D

2014-01-01

The Ring Gate synchronisation system developed by Alstom is new and patented. It uses hydraulic cylinders connected in pairs by a serial connection. The new hydraulic synchronisation system, when compared to the previous mechanical synchronisation system, has several advantages. It is a compact design; it reduces the number of mechanical components as well as maintenance costs. The new system maintains the Ring Gates robustness. The new approach is an evolution from mechanical to hydraulic synchronization assisted by electronic control. The new synchronization system eliminates several mechanical components that used to add wear and friction and which are usually difficult to adjust during maintenance. Tension chains and sprockets and associated controls are eliminated. Through the position sensors, the redundancy of the ring gate synchronization system makes it predictable and reliable. The electronic control compensates for any variation in operation, for example a leak in the hydraulic system. An emergency closing is possible without the electronic control system due to the stiffness of hydraulic serial connection in the hydraulic cylinder pairs. The Ring Gate can work safely against uneven loads and frictions. The development will be reviewed and its application discussed through commissioning results

Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

Science.gov (United States)

Zhong, Donglai; Zhao, Chenyi; Liu, Lijun; Zhang, Zhiyong; Peng, Lian-Mao

2018-04-01

In this letter, we report a gate engineering method to adjust threshold voltage of carbon nanotube (CNT) based field-effect transistors (FETs) continuously in a wide range, which makes the application of CNT FETs especially in digital integrated circuits (ICs) easier. Top-gated FETs are fabricated using solution-processed CNT network films with stacking Pd and Sc films as gate electrodes. By decreasing the thickness of the lower layer metal (Pd) from 20 nm to zero, the effective work function of the gate decreases, thus tuning the threshold voltage (Vt) of CNT FETs from -1.0 V to 0.2 V. The continuous adjustment of threshold voltage through gate engineering lays a solid foundation for multi-threshold technology in CNT based ICs, which then can simultaneously provide high performance and low power circuit modules on one chip.

The effects of tumor motion on planning and delivery of respiratory-gated IMRT

International Nuclear Information System (INIS)

Hugo, Geoffrey D.; Agazaryan, Nzhde; Solberg, Timothy D.

2003-01-01

The purpose of this study is to investigate the effects of object motion on the planning and delivery of IMRT. Two phantoms containing objects were imaged using CT under a variety of motion conditions. The effects of object motion on axial CT acquisition with and without gating were assessed qualitatively and quantitatively. Measurements of effective slice width and position for the CT scans were made. Mutual information image fusion was adapted for use as a quantitative measure of object deformation in CT images. IMRT plans were generated on the CT scans of the moving and gated object images. These plans were delivered with motion, with and without gating, and the delivery error between the moving deliveries and a nonmoving delivery was assessed using a scalable vector-based index. Motion during CT acquisition produces motion artifact, object deformation, and object mispositioning, which can be substantially reduced with gating. Objects that vary in cross section in the direction of motion exhibit the most deformation in CT images. Mutual information provides a useful quantitative estimate of object deformation. The delivery of IMRT in the presence of target motion significantly alters the delivered dose distribution in relation to the planned distribution. The utilization of gating for IMRT treatment, including imaging, planning, and delivery, significantly reduces the errors introduced by object motion

Ciguatoxins: Cyclic Polyether Modulators of Voltage-gated Iion Channel Function

Directory of Open Access Journals (Sweden)

Richard J. Lewis

2006-04-01

Full Text Available Ciguatoxins are cyclic polyether toxins, derived from marine dinoflagellates, which are responsible for the symptoms of ciguatera poisoning. Ingestion of tropical and subtropical fin fish contaminated by ciguatoxins results in an illness characterised by neurological, cardiovascular and gastrointestinal disorders. The pharmacology of ciguatoxins is characterised by their ability to cause persistent activation of voltage-gated sodium channels, to increase neuronal excitability and neurotransmitter release, to impair synaptic vesicle recycling, and to cause cell swelling. It is these effects, in combination with an action to block voltage-gated potassium channels at high doses, which are believed to underlie the complex of symptoms associated with ciguatera. This review examines the sources, structures and pharmacology of ciguatoxins. In particular, attention is placed on their cellular modes of actions to modulate voltage-gated ion channels and other Na+-dependent mechanisms in numerous cell types and to current approaches for detection and treatment of ciguatera.

High-frequency self-aligned graphene transistors with transferred gate stacks

Science.gov (United States)

Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-01-01

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits. PMID:22753503

Implementation of quantum logic gates via Stark-tuned Förster resonance in Rydberg atoms

Science.gov (United States)

Huang, Xi-Rong; Hu, Chang-Sheng; Shen, Li-Tuo; Yang, Zhen-Biao; Wu, Huai-Zhi

2018-02-01

We present a scheme for implementation of controlled-Z and controlled-NOT gates via rapid adiabatic passage and Stark-tuned Förster resonance. By sweeping the Förster resonance once without passing through it and adiabatically tuning the angle-dependent Rydberg-Rydberg interaction of the dipolar nature, the system can be effectively described by a two-level system with the adiabatic theorem. The single adiabatic passage leads to a gate fidelity as high as 0.999 and a greatly reduced gate operation time. We investigate the scheme by considering an actual atomic level configuration with rubidium atoms, where the fidelity of the controlled-Z gate is still higher than 0.99 under the influence of the Zeeman effect.

Signatures of Mechanosensitive Gating.

Science.gov (United States)

Morris, Richard G

2017-01-10

The question of how mechanically gated membrane channels open and close is notoriously difficult to address, especially if the protein structure is not available. This perspective highlights the relevance of micropipette-aspirated single-particle tracking-used to obtain a channel's diffusion coefficient, D, as a function of applied membrane tension, σ-as an indirect assay for determining functional behavior in mechanosensitive channels. While ensuring that the protein remains integral to the membrane, such methods can be used to identify not only the gating mechanism of a protein, but also associated physical moduli, such as torsional and dilational rigidity, which correspond to the protein's effective shape change. As an example, three distinct D-versus-σ "signatures" are calculated, corresponding to gating by dilation, gating by tilt, and gating by a combination of both dilation and tilt. Both advantages and disadvantages of the approach are discussed. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates.

Science.gov (United States)

Dathbun, Ajjiporn; Kim, Youngchan; Kim, Seongchan; Yoo, Youngjae; Kang, Moon Sung; Lee, Changgu; Cho, Jeong Ho

2017-05-10

We demonstrated the fabrication of large-area ReS 2 transistors and logic gates composed of a chemical vapor deposition (CVD)-grown multilayer ReS 2 semiconductor channel and graphene electrodes. Single-layer graphene was used as the source/drain and coplanar gate electrodes. An ion gel with an ultrahigh capacitance effectively gated the ReS 2 channel at a low voltage, below 2 V, through a coplanar gate. The contact resistance of the ion gel-gated ReS 2 transistors with graphene electrodes decreased dramatically compared with the SiO 2 -devices prepared with Cr electrodes. The resulting transistors exhibited good device performances, including a maximum electron mobility of 0.9 cm 2 /(V s) and an on/off current ratio exceeding 10 4 . NMOS logic devices, such as NOT, NAND, and NOR gates, were assembled using the resulting transistors as a proof of concept demonstration of the applicability of the devices to complex logic circuits. The large-area synthesis of ReS 2 semiconductors and graphene electrodes and their applications in logic devices open up new opportunities for realizing future flexible electronics based on 2D nanomaterials.

Gated Detection Measurements of Phosphorescence Lifetimes

Directory of Open Access Journals (Sweden)

Yordan Kostov

2004-10-01

Full Text Available A low-cost, gated system for measurements of phosphorescence lifetimes is presented. An extensive description of the system operating principles and metrological characteristics is given. Remarkably, the system operates without optical filtering of the LED excitation source. A description of a practical system is also given and its performance is discussed. Because the device effectively suppresses high-level background fluorescence and scattered light, it is expected to find wide-spread application in bioprocess, environmental and biomedical fields.

Quantum gate decomposition algorithms.

Energy Technology Data Exchange (ETDEWEB)

Slepoy, Alexander

2006-07-01

Quantum computing algorithms can be conveniently expressed in a format of a quantum logical circuits. Such circuits consist of sequential coupled operations, termed ''quantum gates'', or quantum analogs of bits called qubits. We review a recently proposed method [1] for constructing general ''quantum gates'' operating on an qubits, as composed of a sequence of generic elementary ''gates''.

A GATE evaluation of the sources of error in quantitative {sup 90}Y PET

Energy Technology Data Exchange (ETDEWEB)

Strydhorst, Jared, E-mail: jared.strydhorst@gmail.com; Buvat, Irène [IMIV, U1023 Inserm/CEA/Université Paris-Sud and ERL 9218 CNRS, Université Paris-Saclay, CEA/SHFJ, Orsay 91401 (France); Carlier, Thomas [Department of Nuclear Medicine, Centre Hospitalier Universitaire de Nantes and CRCNA, Inserm U892, Nantes 44000 (France); Dieudonné, Arnaud [Department of Nuclear Medicine, Hôpital Beaujon, HUPNVS, APHP and Inserm U1149, Clichy 92110 (France); Conti, Maurizio [Siemens Healthcare Molecular Imaging, Knoxville, Tennessee, 37932 (United States)

2016-10-15

Purpose: Accurate reconstruction of the dose delivered by {sup 90}Y microspheres using a postembolization PET scan would permit the establishment of more accurate dose–response relationships for treatment of hepatocellular carcinoma with {sup 90}Y. However, the quality of the PET data obtained is compromised by several factors, including poor count statistics and a very high random fraction. This work uses Monte Carlo simulations to investigate what impact factors other than low count statistics have on the quantification of {sup 90}Y PET. Methods: PET acquisitions of two phantoms—a NEMA PET phantom and the NEMA IEC PET body phantom-containing either {sup 90}Y or {sup 18}F were simulated using GATE. Simulated projections were created with subsets of the simulation data allowing the contributions of random, scatter, and LSO background to be independently evaluated. The simulated projections were reconstructed using the commercial software for the simulated scanner, and the quantitative accuracy of the reconstruction and the contrast recovery of the reconstructed images were evaluated. Results: The quantitative accuracy of the {sup 90}Y reconstructions were not strongly influenced by the high random fraction present in the projection data, and the activity concentration was recovered to within 5% of the known value. The contrast recovery measured for simulated {sup 90}Y data was slightly poorer than that for simulated {sup 18}F data with similar count statistics. However, the degradation was not strongly linked to any particular factor. Using a more restricted energy range to reduce the random fraction in the projections had no significant effect. Conclusions: Simulations of {sup 90}Y PET confirm that quantitative {sup 90}Y is achievable with the same approach as that used for {sup 18}F, and that there is likely very little margin for improvement by attempting to model aspects unique to {sup 90}Y, such as the much higher random fraction or the presence of

Detailed measurements and shaping of gate profiles for microchannel-plate-based X-ray framing cameras

International Nuclear Information System (INIS)

Landen, O.L.; Hammel, B.A.; Bell, P.M.; Abare, A.; Bradley, D.K.; Univ. of Rochester, NY

1994-01-01

Gated, microchannel-plate-based (MCP) framing cameras are increasingly used worldwide for x-ray imaging of subnanosecond laser-plasma phenomena. Large dynamic range (> 1,000) measurements of gain profiles for gated microchannel plates (MCP) are presented. Temporal profiles are reconstructed for any point on the microstrip transmission line from data acquired over many shots with variable delay. No evidence for significant pulse distortion by voltage reflections at the ends of the microstrip is observed. The measured profiles compare well to predictions by a time-dependent discrete dynode model down to the 1% level. The calculations do overestimate the contrast further into the temporal wings. The role of electron transit time dispersion in limiting the minimum achievable gate duration is then investigated by using variable duration flattop gating pulses. A minimum gate duration of 50 ps is achieved with flattop gating, consistent with a fractional transit time spread of ∼ 15%

Spinal sensory projection neuron responses to spinal cord stimulation are mediated by circuits beyond gate control.

Science.gov (United States)

Zhang, Tianhe C; Janik, John J; Peters, Ryan V; Chen, Gang; Ji, Ru-Rong; Grill, Warren M

2015-07-01

Spinal cord stimulation (SCS) is a therapy used to treat intractable pain with a putative mechanism of action based on the Gate Control Theory. We hypothesized that sensory projection neuron responses to SCS would follow a single stereotyped response curve as a function of SCS frequency, as predicted by the Gate Control circuit. We recorded the responses of antidromically identified sensory projection neurons in the lumbar spinal cord during 1- to 150-Hz SCS in both healthy rats and neuropathic rats following chronic constriction injury (CCI). The relationship between SCS frequency and projection neuron activity predicted by the Gate Control circuit accounted for a subset of neuronal responses to SCS but could not account for the full range of observed responses. Heterogeneous responses were classifiable into three additional groups and were reproduced using computational models of spinal microcircuits representing other interactions between nociceptive and nonnociceptive sensory inputs. Intrathecal administration of bicuculline, a GABAA receptor antagonist, increased spontaneous and evoked activity in projection neurons, enhanced excitatory responses to SCS, and reduced inhibitory responses to SCS, suggesting that GABAA neurotransmission plays a broad role in regulating projection neuron activity. These in vivo and computational results challenge the Gate Control Theory as the only mechanism underlying SCS and refine our understanding of the effects of SCS on spinal sensory neurons within the framework of contemporary understanding of dorsal horn circuitry. Copyright © 2015 the American Physiological Society.

Respiratory gated beam delivery cannot facilitate margin reduction, unless combined with respiratory correlated image guidance

International Nuclear Information System (INIS)

Korreman, Stine S.; Juhler-Nottrup, Trine; Boyer, Arthur L.

2008-01-01

Purpose/objective: In radiotherapy of targets moving with respiration, beam gating is offered as a means of reducing the target motion. The purpose of this study is to evaluate the safe magnitude of margin reduction for respiratory gated beam delivery. Materials/methods: The study is based on data for 17 lung cancer patients in separate protocols at Rigshospitalet and Stanford Cancer Center. Respiratory curves for external optical markers and implanted fiducials were collected using equipment based on the RPM system (Varian Medical Systems). A total of 861 respiratory curves represented external measurements over 30 fraction treatment courses for 10 patients, and synchronous external/internal measurements in single sessions for seven patients. Variations in respiratory amplitude (simulated coaching) and external/internal phase shifts were simulated by perturbation with realistic values. Variations were described by medians and standard deviations (SDs) of position distributions of the markers. Gating windows (35% duty cycle) were retrospectively applied to the respiratory data for each session, mimicking the use of commercially available gating systems. Medians and SDs of gated data were compared to those of ungated data, to assess potential margin reductions. Results: External respiratory data collected over entire treatment courses showed SDs from 1.6 to 8.1 mm, the major part arising from baseline variations. The gated data had SDs from 1.5 to 7.7 mm, with a mean reduction of 0.3 mm (6%). Gated distributions were more skewed than ungated, and in a few cases a marginal miss of gated respiration would be found even if no margin reduction was applied. Regularization of breathing amplitude to simulate coaching did not alter these results significantly. Simulation of varying phase shifts between internal and external respiratory signals showed that the SDs of gated distributions were the same as for the ungated or smaller, but the median values were markedly shifted

Attosecond ionization gating for isolated attosecond electron wave packet and broadband attosecond xuv pulses

International Nuclear Information System (INIS)

Lan Pengfei; Lu Peixiang; Cao Wei; Li Yuhua; Wang Xinlin

2007-01-01

An attosecond ionization gating is achieved using a few-cycle laser pulse in combination with its second harmonic. With this gating, the generation of the electron wave packet (EWP) is coherently controlled, and an isolated EWP of about 270 as is generated. An isolated broadband attosecond extreme ultraviolet pulse with a bandwidth of about 75 eV can also be generated using this gating, which can be used for EWP measurements as efficiently as a 50-as pulse, allowing one to measure a wide range of ultrafast dynamics not normally accessible before

Experimental study on x-rays dose enhancement effects for floating gate ROMs

CERN Document Server

Guo Hong Xia; Chen Yu Sheng; Han Fu Bin; He Chao Hui; Zhao Hui

2002-01-01

Experimental results of x-ray dose enhancement effects are given for floating gate read-only memory (ROMs) irradiated in the Beijing Synchrotron Radiation Facility. The wrong byte numbers vs. total irradiation dose have been tested and the equivalent relation of total dose damage is provided compared the response of devices irradiated with sup 6 sup 0 Co gamma-ray source. The x-ray dose enhancement factors for floating gate ROMs are obtained firstly in China. These results can be an effective evaluation data for x-rays radiation hardening technology

Evaluating rain gardens as a method to reduce the impact of sewer overflows in sources of drinking water.

Science.gov (United States)

Autixier, Laurène; Mailhot, Alain; Bolduc, Samuel; Madoux-Humery, Anne-Sophie; Galarneau, Martine; Prévost, Michèle; Dorner, Sarah

2014-11-15

The implications of climate change and changing precipitation patterns need to be investigated to evaluate mitigation measures for source water protection. Potential solutions need first to be evaluated under present climate conditions to determine their utility as climate change adaptation strategies. An urban drainage network receiving both stormwater and wastewater was studied to evaluate potential solutions to reduce the impact of combined sewer overflows (CSOs) in a drinking water source. A detailed hydraulic model was applied to the drainage basin to model the implementation of best management practices at a drainage basin scale. The model was calibrated and validated with field data of CSO flows for seven events from a survey conducted in 2009 and 2010. Rain gardens were evaluated for their reduction of volumes of water entering the drainage network and of CSOs. Scenarios with different levels of implementation were considered and evaluated. Of the total impervious area within the basin directly connected to the sewer system, a maximum of 21% could be alternately directed towards rain gardens. The runoff reductions for the entire catchment ranged from 12.7% to 19.4% depending on the event considered. The maximum discharged volume reduction ranged from 13% to 62% and the maximum peak flow rate reduction ranged from 7% to 56%. Of concern is that in-sewer sediment resuspension is an important process to consider with regard to the efficacy of best management practices aimed at reducing extreme loads and concentrations. Rain gardens were less effective for large events, which are of greater importance for drinking water sources. These practices could increase peak instantaneous loads as a result of greater in-sewer resuspension during large events. Multiple interventions would be required to achieve the objectives of reducing the number, total volumes and peak contaminant loads of overflows upstream of drinking water intakes. Copyright © 2014 Elsevier B.V. All

Parallel Transport Quantum Logic Gates with Trapped Ions.

Science.gov (United States)

de Clercq, Ludwig E; Lo, Hsiang-Yu; Marinelli, Matteo; Nadlinger, David; Oswald, Robin; Negnevitsky, Vlad; Kienzler, Daniel; Keitch, Ben; Home, Jonathan P

2016-02-26

We demonstrate single-qubit operations by transporting a beryllium ion with a controlled velocity through a stationary laser beam. We use these to perform coherent sequences of quantum operations, and to perform parallel quantum logic gates on two ions in different processing zones of a multiplexed ion trap chip using a single recycled laser beam. For the latter, we demonstrate individually addressed single-qubit gates by local control of the speed of each ion. The fidelities we observe are consistent with operations performed using standard methods involving static ions and pulsed laser fields. This work therefore provides a path to scalable ion trap quantum computing with reduced requirements on the optical control complexity.

Process development of ITO source/drain electrode for the top-gate indium-gallium-zinc oxide transparent thin-film transistor

International Nuclear Information System (INIS)

Cheong, Woo-Seok; Yoon, Young-sun; Shin, Jae-Heon; Hwang, Chi-Sun; Chu, Hye Yong

2009-01-01

Indium-tin oxide (ITO) has been widely used as electrodes for LCDs and OLEDs. The applications are expanding to the transparent thin-film transistors (TTFT S ) for the versatile circuits or transparent displays. This paper is related with optimization of ITO source and drain electrode for TTFTs on glass substrates. For example, un-etched ITO remnants, which frequently found in the wet etching process, often originate from unsuitable ITO formation processes. In order to improve them, an ion beam deposition method is introduced, which uses for forming a seed layer before the main ITO deposition. We confirm that ITO films with seed layers are effective to obtain clean and smooth glass surfaces without un-etched ITO remnants, resulting in a good long-run electrical stability of the top-gate indium-gallium-zinc oxide-TTFT.

Self-gated fat-suppressed cardiac cine MRI.

Science.gov (United States)

Ingle, R Reeve; Santos, Juan M; Overall, William R; McConnell, Michael V; Hu, Bob S; Nishimura, Dwight G

2015-05-01

To develop a self-gated alternating repetition time balanced steady-state free precession (ATR-SSFP) pulse sequence for fat-suppressed cardiac cine imaging. Cardiac gating is computed retrospectively using acquired magnetic resonance self-gating data, enabling cine imaging without the need for electrocardiogram (ECG) gating. Modification of the slice-select rephasing gradients of an ATR-SSFP sequence enables the acquisition of a one-dimensional self-gating readout during the unused short repetition time (TR). Self-gating readouts are acquired during every TR of segmented, breath-held cardiac scans. A template-matching algorithm is designed to compute cardiac trigger points from the self-gating signals, and these trigger points are used for retrospective cine reconstruction. The proposed approach is compared with ECG-gated ATR-SSFP and balanced steady-state free precession in 10 volunteers and five patients. The difference of ECG and self-gating trigger times has a variability of 13 ± 11 ms (mean ± SD). Qualitative reviewer scoring and ranking indicate no statistically significant differences (P > 0.05) between self-gated and ECG-gated ATR-SSFP images. Quantitative blood-myocardial border sharpness is not significantly different among self-gated ATR-SSFP ( 0.61±0.15 mm -1), ECG-gated ATR-SSFP ( 0.61±0.15 mm -1), or conventional ECG-gated balanced steady-state free precession cine MRI ( 0.59±0.15 mm -1). The proposed self-gated ATR-SSFP sequence enables fat-suppressed cardiac cine imaging at 1.5 T without the need for ECG gating and without decreasing the imaging efficiency of ATR-SSFP. © 2014 Wiley Periodicals, Inc.

Critical Gates Identification for Fault-Tolerant Design in Math Circuits

Directory of Open Access Journals (Sweden)

Tian Ban

2017-01-01

Full Text Available Hardware redundancy at different levels of design is a common fault mitigation technique, which is well known for its efficiency to the detriment of area overhead. In order to reduce this drawback, several fault-tolerant techniques have been proposed in literature to find a good trade-off. In this paper, critical constituent gates in math circuits are detected and graded based on the impact of an error in the output of a circuit. These critical gates should be hardened first under the area constraint of design criteria. Indeed, output bits considered crucial to a system receive higher priorities to be protected, reducing the occurrence of critical errors. The 74283 fast adder is used as an example to illustrate the feasibility and efficiency of the proposed approach.

Determination of void fraction from source range monitor and mass flow rate data

International Nuclear Information System (INIS)

McCormick, R.D.

1986-09-01

This is a report on the calculation of the TMI-2 primary coolant system local void fraction from source range neutron flux monitor data and from hot leg mass flowrate meter data during the first 100 minutes of the accident. The methods of calculation of void fraction from the two data sources is explained and the results are compared. It is indicated that the void fraction determined using the mass flowrate data contained an error of unknown magnitude due to the assumption of constant homogeneous volumetric flowrate used in the calculation and required further work. Void fraction determined from the source range monitor data is felt to be usable although an uncertainty analysis has not been performed

Multiqubit quantum phase gate using four-level superconducting quantum interference devices coupled to superconducting resonator

Energy Technology Data Exchange (ETDEWEB)

Waseem, Muhammad; Irfan, Muhammad [Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Nilore, Islamabad 45650 (Pakistan); Qamar, Shahid, E-mail: shahid_qamar@pieas.edu.pk [Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Nilore, Islamabad 45650 (Pakistan)

2012-07-15

In this paper, we propose a scheme to realize three-qubit quantum phase gate of one qubit simultaneously controlling two target qubits using four-level superconducting quantum interference devices (SQUIDs) coupled to a superconducting resonator. The two lowest levels Divides 0 Right-Pointing-Angle-Bracket and Divides 1 Right-Pointing-Angle-Bracket of each SQUID are used to represent logical states while the higher energy levels Divides 2 Right-Pointing-Angle-Bracket and Divides 3 Right-Pointing-Angle-Bracket are utilized for gate realization. Our scheme does not require adiabatic passage, second order detuning, and the adjustment of the level spacing during gate operation which reduce the gate time significantly. The scheme is generalized for an arbitrary n-qubit quantum phase gate. We also apply the scheme to implement three-qubit quantum Fourier transform.

A Detailed Study of Debris Flow Source Areas in the Northern Colorado Front Range.

Science.gov (United States)

Arana-Morales, A.; Baum, R. L.; Godt, J.

2014-12-01

Nearly continuous, heavy rainfall occurred during 9-13 September 2013 causing flooding and widespread landslides and debris flows in the northern Colorado Front Range. Whereas many recent studies have identified erosion as the most common process leading to debris flows in the mountains of Colorado, nearly all of the debris flows mapped in this event began as small, shallow landslides. We mapped the boundaries of 415 September 2013 debris flows in the Eldorado Springs and Boulder 7.5-minute quadrangles using 0.5-m-resolution satellite imagery. We characterized the landslide source areas of six debris flows in the field as part of an effort to identify what factors controlled their locations. Four were on a dip slope in sedimentary rocks in the Pinebrook Hills area, near Boulder, and the other two were in granitic rocks near Gross Reservoir. Although we observed no obvious geomorphic differences between the source areas and surrounding non-landslide areas, we noted several characteristics that the source areas all had in common. Slopes of the source areas ranged from 28° to 35° and most occurred on planar or slightly concave slopes that were vegetated with grass, small shrubs, and sparse trees. The source areas were shallow, irregularly shaped, and elongated downslope: widths ranged from 4 to 9 m, lengths from 6 to 40 m and depths ranged from 0.7 to 1.2 m. Colluvium was the source material for all of the debris flows and bedrock was exposed in the basal surface of all of the source areas. We observed no evidence for concentrated surface runoff upslope from the sources. Local curvature and roughness of bedrock and surface topography, and depth distribution and heterogeneity of the colluvium appear to have controlled the specific locations of these shallow debris-flow source areas. The observed distribution and characteristics of the source areas help guide ongoing efforts to model initiation of the debris flows.

Evaluation of respiratory movement during gated radiotherapy using film and electronic portal imaging

International Nuclear Information System (INIS)

Ford, E.C.; Mageras, G.S.; Yorke, E.; Rosenzweig, K.E.; Wagman, R.; Ling, C.C.

2002-01-01

Purpose: To evaluate the effectiveness of a commercial system in reducing respiration-induced treatment uncertainty by gating the radiation delivery. Methods and Materials: The gating system considered here measures respiration from the position of a reflective marker on the patient's chest. Respiration-triggered planning CT scans were obtained for 8 patients (4 lung, 4 liver) at the intended phase of respiration (6 at end expiration and 2 at end inspiration). In addition, fluoroscopic movies were recorded simultaneously with the respiratory waveform. During the treatment sessions, gated localization films were used to measure the position of the diaphragm relative to the vertebral bodies, which was compared to the reference digitally reconstructed radiograph derived from the respiration-triggered planning CT. Variability was quantified by the standard deviation about the mean position. We also assessed the interfraction variability of soft tissue structures during gated treatment in 2 patients using an amorphous silicon electronic portal imaging device. Results: The gated localization films revealed an interfraction patient-averaged diaphragm variability of 2.8±1.0 mm (error bars indicate standard deviation in the patient population). The fluoroscopic data yielded a patient-averaged intrafraction diaphragm variability of 2.6±1.7 mm. With no gating, this intrafraction excursion became 6.9±2.1 mm. In gated localization films, the patient-averaged mean displacement of the diaphragm from the planning position was 0.0±3.9 mm. However, in 4 of the 8 patients, the mean (over localization films) displacement was >4 mm, indicating a systematic displacement in treatment position from the planned one. The position of soft tissue features observed in portal images during gated treatments over several fractions showed a mean variability between 2.6 and 5.7 mm. The intrafraction variability, however, was between 0.6 and 1.4 mm, indicating that most of the variability was

SU-F-T-514: Evaluation of the Accuracy of Free-Breathing and Deep Inspiration Breath-Hold Gated Beam Delivery Using An Elekta Linac

International Nuclear Information System (INIS)

Jermoumi, M; Cao, D; Housley, D; Shepard, D; Xie, R

2016-01-01

Purpose: In this study, we evaluated the performance of an Elekta linac in the delivery of gated radiotherapy. We examined whether the use of either a short gating window or a long beam hold impacts the accuracy of the delivery Methods: The performance of an Elekta linac in the delivery of gated radiotherapy was assessed using a 20cmX 20cm open field with the radiation delivered using a range of beam-on and beam-off time periods. Two SBRT plans were used to examine the accuracy of gated beam delivery for clinical treatment plans. For the SBRT cases, tests were performed for both free-breathing based gating and for gated delivery with a simulated breath-hold. A MatriXX 2D ion chamber array was used for data collection, and the gating accuracy was evaluated using gamma score. Results: For the 20cmX20cm open field, the gated beam delivery agreed closely with the non-gated delivery results. Discrepancies in the agreement, however, began to appear with a 5-to-1 ratio of the beam-off to beam-on. For these tight gating windows, each beam-on segment delivered a small number of monitor units. This finding was confirmed with dose distribution analysis from the delivery of the two VMAT plans where the gamma score(±1%,2%/1mm) showed passing rates in the range of 95% to 100% for gating windows of 25%, 38%, 50%, 63%, 75%, and 83%. Using a simulated sinusoidal breathing signal with a 4 second period, the gamma score of freebreathing gating and breath-hold gating deliveries were measured in the range of 95.7% to 100%. Conclusion: The results demonstrate that Elekta linacs can be used to accurately deliver respiratory gated treatments for both free-breathing and breath-hold patients. The accuracy of beams delivered in a gated delivery mode at low small MU proved higher than similar deliveries performed in a non-gated (manually interrupted) fashion.

SU-F-T-514: Evaluation of the Accuracy of Free-Breathing and Deep Inspiration Breath-Hold Gated Beam Delivery Using An Elekta Linac

Energy Technology Data Exchange (ETDEWEB)

Jermoumi, M; Cao, D; Housley, D; Shepard, D [Department of Radiation Oncology, Swedish Cancer Institute, Seattle, WA (United States); Xie, R [Ironwood Cancer and Research Centers, Chandler, AZ (United States)

2016-06-15

Purpose: In this study, we evaluated the performance of an Elekta linac in the delivery of gated radiotherapy. We examined whether the use of either a short gating window or a long beam hold impacts the accuracy of the delivery Methods: The performance of an Elekta linac in the delivery of gated radiotherapy was assessed using a 20cmX 20cm open field with the radiation delivered using a range of beam-on and beam-off time periods. Two SBRT plans were used to examine the accuracy of gated beam delivery for clinical treatment plans. For the SBRT cases, tests were performed for both free-breathing based gating and for gated delivery with a simulated breath-hold. A MatriXX 2D ion chamber array was used for data collection, and the gating accuracy was evaluated using gamma score. Results: For the 20cmX20cm open field, the gated beam delivery agreed closely with the non-gated delivery results. Discrepancies in the agreement, however, began to appear with a 5-to-1 ratio of the beam-off to beam-on. For these tight gating windows, each beam-on segment delivered a small number of monitor units. This finding was confirmed with dose distribution analysis from the delivery of the two VMAT plans where the gamma score(±1%,2%/1mm) showed passing rates in the range of 95% to 100% for gating windows of 25%, 38%, 50%, 63%, 75%, and 83%. Using a simulated sinusoidal breathing signal with a 4 second period, the gamma score of freebreathing gating and breath-hold gating deliveries were measured in the range of 95.7% to 100%. Conclusion: The results demonstrate that Elekta linacs can be used to accurately deliver respiratory gated treatments for both free-breathing and breath-hold patients. The accuracy of beams delivered in a gated delivery mode at low small MU proved higher than similar deliveries performed in a non-gated (manually interrupted) fashion.

Low band-to-band tunnelling and gate tunnelling current in novel nanoscale double-gate architecture: simulations and investigation

International Nuclear Information System (INIS)

Datta, Deepanjan; Ganguly, Samiran; Dasgupta, S

2007-01-01

Large band-to-band tunnelling (BTBT) and gate leakage current can limit scalability of nanoscale devices. In this paper, we have proposed a novel nanoscale parallel connected heteromaterial double gate (PCHEM-DG) architecture with triple metal gate which significantly suppress BTBT leakage, making it efficient for low power design in the sub-10 nm regime. We have also proposed a triple gate device with p + poly-n + poly-p + poly gate which has substantially low gate leakage over symmetric DG MOSFET. Simulations are performed using a 2D Poisson-Schroedinger simulator and verified with a 2D device simulator ATLAS. We conclude that, due to intrinsic body doping, negligible gate leakage, suppressed BTBT over symmetric DG devices, metal gate (MG) PCHEM-DG MOSFET is efficient for low power circuit design in the nanometre regime

Implementation of respiratory-gated VMAT on a Versa HD linear accelerator.

Science.gov (United States)

Snyder, Jeffrey E; Flynn, Ryan T; Hyer, Daniel E

2017-09-01

The accurate delivery of respiratory-gated volumetric modulated arc therapy (VMAT) treatment plans presents a challenge since the gantry rotation and collimator leaves must be repeatedly stopped and set into motion during each breathing cycle. In this study, we present the commissioning process for an Anzai gating system (AZ-733VI) on an Elekta Versa HD linear accelerator and make recommendations for successful clinical implementation. The commissioning tests include central axis dose consistency, profile consistency, gating beam-on/off delay, and comparison of gated versus nongated gamma pass rates for patient-specific quality assurance using four clinically commissioned photon energies: 6 MV, 6 FFF, 10 MV, and 10 FFF. The central axis dose constancy between gated and nongated deliveries was within 0.6% for all energies and the analysis of open field profiles for gated and nongated deliveries showed an agreement of 97.8% or greater when evaluated with a percent difference criteria of 1%. The measurement of the beam-on/off delay was done by evaluating images of a moving ball-bearing phantom triggered by the gating system and average beam-on delays of 0.22-0.29 s were observed. No measurable beam-off delay was present. Measurements of gated VMAT dose distributions resulted in decrements as high as 9% in the gamma passing rate as compared to nongated deliveries when evaluated against the planned dose distribution at 3%/3 mm. By decreasing the dose rate, which decreases the gantry speed during gated delivery, the gamma passing rates of gated and nongated treatments can be made equivalent. We present an empirically derived formula to limit the maximum dose rate during VMAT deliveries and show that by implementing a reduced dose rate, a gamma passing rate of greater than 95% (3%/3 mm) was obtained for all plan measurements. © 2017 The Authors. Journal of Applied Clinical Medical Physics published by Wiley Periodicals, Inc. on behalf of American Association of

Activity of Palythoa caribaeorum Venom on Voltage-Gated Ion Channels in Mammalian Superior Cervical Ganglion Neurons

Directory of Open Access Journals (Sweden)

Fernando Lazcano-Pérez

2016-05-01

Full Text Available The Zoanthids are an order of cnidarians whose venoms and toxins have been poorly studied. Palythoa caribaeorum is a zoanthid commonly found around the Mexican coastline. In this study, we tested the activity of P. caribaeorum venom on voltage-gated sodium channel (NaV1.7, voltage-gated calcium channel (CaV2.2, the A-type transient outward (IA and delayed rectifier (IDR currents of KV channels of the superior cervical ganglion (SCG neurons of the rat. These results showed that the venom reversibly delays the inactivation process of voltage-gated sodium channels and inhibits voltage-gated calcium and potassium channels in this mammalian model. The compounds responsible for these effects seem to be low molecular weight peptides. Together, these results provide evidence for the potential use of zoanthids as a novel source of cnidarian toxins active on voltage-gated ion channels.

MOSFET-BJT hybrid mode of the gated lateral bipolar junction transistor for C-reactive protein detection.

Science.gov (United States)

Yuan, Heng; Kwon, Hyurk-Choon; Yeom, Se-Hyuk; Kwon, Dae-Hyuk; Kang, Shin-Won

2011-10-15

In this study, we propose a novel biosensor based on a gated lateral bipolar junction transistor (BJT) for biomaterial detection. The gated lateral BJT can function as both a BJT and a metal-oxide-semiconductor field-effect transistor (MOSFET) with both the emitter and source, and the collector and drain, coupled. C-reactive protein (CRP), which is an important disease marker in clinical examinations, can be detected using the proposed device. In the MOSFET-BJT hybrid mode, the sensitivity, selectivity, and reproducibility of the gated lateral BJT for biosensors were evaluated in this study. According to the results, in the MOSFET-BJT hybrid mode, the gated lateral BJT shows good selectivity and reproducibility. Changes in the emitter (source) current of the device for CRP antigen detection were approximately 0.65, 0.72, and 0.80 μA/decade at base currents of -50, -30, and -10 μA, respectively. The proposed device has significant application in the detection of certain biomaterials that require a dilution process using a common biosensor, such as a MOSFET-based biosensor. Copyright © 2011 Elsevier B.V. All rights reserved.

Social gating of sensory information during ongoing communication.

Science.gov (United States)

Anders, Silke; Heussen, Yana; Sprenger, Andreas; Haynes, John-Dylan; Ethofer, Thomas

2015-01-01

Social context plays an important role in human communication. Depending on the nature of the source, the same communication signal might be processed in fundamentally different ways. However, the selective modulation (or "gating") of the flow of neural information during communication is not fully understood. Here, we use multivoxel pattern analysis (MVPA) and multivoxel connectivity analysis (MVCA), a novel technique that allows to analyse context-dependent changes of the strength interregional coupling between ensembles of voxels, to examine how the human brain differentially gates content-specific sensory information during ongoing perception of communication signals. In a simulated electronic communication experiment, participants received two alternative text messages during fMRI ("happy" or "sad") which they believed had been sent either by their real-life friend outside the scanner or by a computer. A region in the dorsal medial prefrontal cortex (dmPFC) selectively increased its functional coupling with sensory-content encoding regions in the visual cortex when a text message was perceived as being sent by the participant's friend, and decreased its functional coupling with these regions when a text message was perceived as being sent by the computer. Furthermore, the strength of neural encoding of content-specific information of text messages in the dmPFC was modulated by the social tie between the participant and her friend: the more of her spare time a participant reported to spend with her friend the stronger was the neural encoding. This suggests that the human brain selectively gates sensory information into the relevant network for processing the mental states of others, depending on the source of the communication signal. Copyright © 2014 The Authors. Published by Elsevier Inc. All rights reserved.

Fully automated intrinsic respiratory and cardiac gating for small animal CT

Energy Technology Data Exchange (ETDEWEB)

Kuntz, J; Baeuerle, T; Semmler, W; Bartling, S H [Department of Medical Physics in Radiology, German Cancer Research Center, Heidelberg (Germany); Dinkel, J [Department of Radiology, German Cancer Research Center, Heidelberg (Germany); Zwick, S [Department of Diagnostic Radiology, Medical Physics, Freiburg University (Germany); Grasruck, M [Siemens Healthcare, Forchheim (Germany); Kiessling, F [Chair of Experimental Molecular Imaging, RWTH-Aachen University, Medical Faculty, Aachen (Germany); Gupta, R [Department of Radiology, Massachusetts General Hospital, Boston, MA (United States)], E-mail: j.kuntz@dkfz.de

2010-04-07

A fully automated, intrinsic gating algorithm for small animal cone-beam CT is described and evaluated. A parameter representing the organ motion, derived from the raw projection images, is used for both cardiac and respiratory gating. The proposed algorithm makes it possible to reconstruct motion-corrected still images as well as to generate four-dimensional (4D) datasets representing the cardiac and pulmonary anatomy of free-breathing animals without the use of electrocardiogram (ECG) or respiratory sensors. Variation analysis of projections from several rotations is used to place a region of interest (ROI) on the diaphragm. The ROI is cranially extended to include the heart. The centre of mass (COM) variation within this ROI, the filtered frequency response and the local maxima are used to derive a binary motion-gating parameter for phase-sensitive gated reconstruction. This algorithm was implemented on a flat-panel-based cone-beam CT scanner and evaluated using a moving phantom and animal scans (seven rats and eight mice). Volumes were determined using a semiautomatic segmentation. In all cases robust gating signals could be obtained. The maximum volume error in phantom studies was less than 6%. By utilizing extrinsic gating via externally placed cardiac and respiratory sensors, the functional parameters (e.g. cardiac ejection fraction) and image quality were equivalent to this current gold standard. This algorithm obviates the necessity of both gating hardware and user interaction. The simplicity of the proposed algorithm enables adoption in a wide range of small animal cone-beam CT scanners.

GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

Energy Technology Data Exchange (ETDEWEB)

None

2011-07-31

This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

Low band-to-band tunnelling and gate tunnelling current in novel nanoscale double-gate architecture: simulations and investigation

Energy Technology Data Exchange (ETDEWEB)

Datta, Deepanjan [Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906 (United States); Ganguly, Samiran [Department of Electronics Engineering, Indian School of Mines, Dhanbad-826004 (India); Dasgupta, S [Department of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee-247667 (India)

2007-05-30

Large band-to-band tunnelling (BTBT) and gate leakage current can limit scalability of nanoscale devices. In this paper, we have proposed a novel nanoscale parallel connected heteromaterial double gate (PCHEM-DG) architecture with triple metal gate which significantly suppress BTBT leakage, making it efficient for low power design in the sub-10 nm regime. We have also proposed a triple gate device with p{sup +} poly-n{sup +} poly-p{sup +} poly gate which has substantially low gate leakage over symmetric DG MOSFET. Simulations are performed using a 2D Poisson-Schroedinger simulator and verified with a 2D device simulator ATLAS. We conclude that, due to intrinsic body doping, negligible gate leakage, suppressed BTBT over symmetric DG devices, metal gate (MG) PCHEM-DG MOSFET is efficient for low power circuit design in the nanometre regime.

N Channel JFET Based Digital Logic Gate Structure

Science.gov (United States)

Krasowski, Michael J (Inventor)

2013-01-01

An apparatus is provided that includes a first field effect transistor with a source tied to zero volts and a drain tied to voltage drain drain (Vdd) through a first resistor. The apparatus also includes a first node configured to tie a second resistor to a third resistor and connect to an input of a gate of the first field effect transistor in order for the first field effect transistor to receive a signal. The apparatus also includes a second field effect transistor configured as a unity gain buffer having a drain tied to Vdd and an uncommitted source.

Full-asynchronous gigabit-symmetric DPSK downstream and OOK upstream OCDMA-PON with source-free ONUs employing all-optical self-clocked time gate.

Science.gov (United States)

Dai, Bo; Shimizu, Satoshi; Wang, Xu; Wada, Naoya

2012-12-10

We propose an asynchronous gigabit-symmetric optical code division multiplexing access passive optical network (OCDMA-PON) in which optical network units (ONUs) are source-free. In the experiment, we demonstrate a duplex OCDMA system with a 50 km 10 Gbit/s/user 4-user DPSK-OCDMA downlink and a 50 km 10 Gbit/s/user 4-user OOK-OCDMA uplink and error-free duplex transmissions are achieved. Besides, we investigate an all-optical self-clocked time gate, which is used for the signal regeneration of decoded signals and ensures asynchronization in the up/downstream transmissions. Furthermore, we evaluate the power budget of the proposed duplex transmission.

Sliding-gate valve for use with abrasive materials

Science.gov (United States)

Ayers, Jr., William J.; Carter, Charles R.; Griffith, Richard A.; Loomis, Richard B.; Notestein, John E.

1985-01-01

The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

Resolving the range ambiguity in OFDR using digital signal processing

International Nuclear Information System (INIS)

Riesen, Nicolas; Lam, Timothy T-Y; Chow, Jong H

2014-01-01

A digitally range-gated variant of optical frequency domain reflectometry is demonstrated which overcomes the beat note ambiguity when sensing beyond a single frequency sweep. The range-gating is achieved using a spread spectrum technique involving time-stamping of the optical signal using high-frequency pseudorandom phase modulation. The reflections from different sections of fiber can then be isolated in the time domain by digitally inverting the phase modulation using appropriately-delayed copies of the pseudorandom noise code. Since the technique overcomes the range ambiguity in OFDR, it permits high sweep repetition rates without sacrificing range, thus allowing for high-bandwidth sensing over long lengths of fiber. This is demonstrated for the case of quasi-distributed sensing. (paper)

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.

Science.gov (United States)

Liu, Xiao-Yong; Zhao, Sheng-Xun; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Zhang, Chun-Min; Lu, Hong-Liang; Wang, Peng-Fei; Zhang, David Wei

2015-01-01

Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement. A 10.6-nm AlN thin film was grown upon the surface of the HEMT serving as the gate dielectric under the gate electrode and as the passivation layer in the access region at the same time. The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

OpenAIRE

Brown, A.R.; Asenov, A.; Watling, J.R.

2002-01-01

We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed "atomistic" drift-diffusion simulation approach includes quantum corrections based on the density gradient formalism. The quantum confinement and source-to-drain tunnelling effects are carefully calibrated in respect of self-consistent Poisson-Schrodinger and nonequilibrium Green's function simulation...

Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors.

Science.gov (United States)

Lemaitre, Maxime G; Donoghue, Evan P; McCarthy, Mitchell A; Liu, Bo; Tongay, Sefaattin; Gila, Brent; Kumar, Purushottam; Singh, Rajiv K; Appleton, Bill R; Rinzler, Andrew G

2012-10-23

An improved process for graphene transfer was used to demonstrate high performance graphene enabled vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance observed in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi level shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking advantage of both barrier height lowering and tunnel barrier thinning. Devices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 10(6) and 200 mA/cm(2), respectively, at drain voltages below 5 V.

Photon-gated spin transistor

OpenAIRE

Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

2017-01-01

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

On photonic controlled phase gates

International Nuclear Information System (INIS)

Kieling, K; Eisert, J; O'Brien, J L

2010-01-01

As primitives for entanglement generation, controlled phase gates have a central role in quantum computing. Especially in ideas realizing instances of quantum computation in linear optical gate arrays, a closer look can be rewarding. In such architectures, all effective nonlinearities are induced by measurements. Hence the probability of success is a crucial parameter of such quantum gates. In this paper, we discuss this question for controlled phase gates that implement an arbitrary phase with one and two control qubits. Within the class of post-selected gates in dual-rail encoding with vacuum ancillas, we identify the optimal success probabilities. We construct networks that allow for implementation using current experimental capabilities in detail. The methods employed here appear specifically useful with the advent of integrated linear optical circuits, providing stable interferometers on monolithic structures.

Usefulness of electrocardiography-gated dual-source computed tomography for evaluating morphological features of the ventricles in children with complex congenital heart defects

International Nuclear Information System (INIS)

Nakagawa, Motoo; Hara, Masaki; Sakurai, Keita; Asano, Miki; Shibamoto, Yuta; Ohashi, Kazuya

2011-01-01

Improved time resolution using dual-source computed tomography (DSCT) enabled adaptation of electrocardiography (ECG)-gated cardiac CT for children with a high heart rate. In this study, we evaluated the ability of ECG-gated DSCT (ECG-DSCT) to depict the morphological ventricular features in patients with congenital heart disease (CHD). Between August 2006 and March 2010, a total of 66 patients with CHD (aged 1 day to 9 years, median 11 months) were analyzed using ECG-DSCT. The type of anomaly was ventricular septal defect (VSD) in 32 (malaligned type in 20, perimembranous type in 7, supracristal type in 3, muscular type in 2), single ventricle (SV) in 11, and corrected transposition of the great arteries (cTGA) in 3. All patients underwent ECG-DSCT and ultrasonography (US). We evaluated the accuracy of diagnosing the type of VSD. For the cases with SV and cTGA, we evaluated the ability to depict anatomical ventricular features. In all 32 cases of VSD, DSCT could confirm the VSD defects, and the findings were identical to those obtained by US. Anatomical configurations of the SV and cTGA were correctly diagnosed, similar to that on US. Our study suggests that ECG-DSCT can clearly depict the configuration of ventricles. (author)

Neuronal substrates of sensory gating within the human brain.

NARCIS (Netherlands)

Grunwald, T.; Boutros, N.N.; Pezer, N.; Oertzen, J. von; Fernandez, G.S.E.; Schaller, C.; Elger, C.E.

2003-01-01

BACKGROUND: For the human brain, habituation to irrelevant sensory input is an important function whose failure is associated with behavioral disturbances. Sensory gating can be studied by recording the brain's electrical responses to repeated clicks: the P50 potential is normally reduced to the

Suitability of markerless EPID tracking for tumor position verification in gated radiotherapy

International Nuclear Information System (INIS)

Serpa, Marco; Baier, Kurt; Guckenberger, Matthias; Cremers, Florian; Meyer, Juergen

2014-01-01

Purpose: To maximize the benefits of respiratory gated radiotherapy (RGRT) of lung tumors real-time verification of the tumor position is required. This work investigates the feasibility of markerless tracking of lung tumors during beam-on time in electronic portal imaging device (EPID) images of the MV therapeutic beam. Methods: EPID movies were acquired at ∼2 fps for seven lung cancer patients with tumor peak-to-peak motion ranges between 7.8 and 17.9 mm (mean: 13.7 mm) undergoing stereotactic body radiotherapy. The external breathing motion of the abdomen was synchronously measured. Both datasets were retrospectively analyzed inPortalTrack, an in-house developed tracking software. The authors define a three-step procedure to run the simulations: (1) gating window definition, (2) gated-beam delivery simulation, and (3) tumor tracking. First, an amplitude threshold level was set on the external signal, defining the onset of beam-on/-off signals. This information was then mapped onto a sequence of EPID images to generate stamps of beam-on/-hold periods throughout the EPID movies in PortalTrack, by obscuring the frames corresponding to beam-off times. Last, tumor motion in the superior-inferior direction was determined on portal images by the tracking algorithm during beam-on time. The residual motion inside the gating window as well as target coverage (TC) and the marginal target displacement (MTD) were used as measures to quantify tumor position variability. Results: Tumor position monitoring and estimation from beam's-eye-view images during RGRT was possible in 67% of the analyzed beams. For a reference gating window of 5 mm, deviations ranging from 2% to 86% (35% on average) were recorded between the reference and measured residual motion. TC (range: 62%–93%; mean: 77%) losses were correlated with false positives incidence rates resulting mostly from intra-/inter-beam baseline drifts, as well as sudden cycle-to-cycle fluctuations in exhale positions. Both

Reversible logic gates on Physarum Polycephalum

International Nuclear Information System (INIS)

Schumann, Andrew

2015-01-01

In this paper, we consider possibilities how to implement asynchronous sequential logic gates and quantum-style reversible logic gates on Physarum polycephalum motions. We show that in asynchronous sequential logic gates we can erase information because of uncertainty in the direction of plasmodium propagation. Therefore quantum-style reversible logic gates are more preferable for designing logic circuits on Physarum polycephalum

TMI-2 source and intermediate range neutron flux monitors data report

International Nuclear Information System (INIS)

McCormick, R.D.

1986-03-01

This is a report on the preparation of data from the TMI-2 excore source and intermediate range neutron flux monitors for inclusion into the TMI Data Base. The sources of the as-recorded data are discussed as well as the process of transforming these data into digital form. The corrections to the as-recorded data are given and the data quality classification and uncertainty are established. The identifiers attached to each data set in the TMI Data Base are given

Unconventional geometric logic gate in a strong-driving-assisted multi-mode cavity

International Nuclear Information System (INIS)

Chang-Ning, Pan; Di-Wu, Yang; Xue-Hui, Zhao; Mao-Fa, Fang

2010-01-01

We propose a scheme to implement an unconventional geometric logic gate separately in a two-mode cavity and a multi-mode cavity assisted by a strong classical driving field. The effect of the cavity decay is included in the investigation. The numerical calculation is carried out, and the result shows that our scheme is more tolerant to cavity decay than the previous one because the time consumed for finishing the logic gate is doubly reduced. (general)

SU-F-J-121: Dosimetric Evaluation of Active Breathing Coordinator-Response Gating System Linked to Linear Accelerator in Volumetric Modulated Arc Therapy

Energy Technology Data Exchange (ETDEWEB)

Lee, S; Zheng, Y; Albani, D; Colussi, V; Dorth, J; Sohn, J [Case Western University, Cleveland, OH (United States)

2016-06-15

Purpose: To reduce internal target volume (ITV), respiratory management is a must in imaging and treatment for lung, liver, and breast cancers. We investigated the dosimetric accuracy of VMAT treatment delivery with a Response™ gating system linked to linear accelerator. Methods: The Response™ gating module designed to directly control radiation beam by breath-holding with a ABC system (Elekta AB, Stockholm, Sweden) was tested for VMAT treatments. Seven VMAT plans including three conventional and four stereotactic body radiotherapy (SBRT) cases were evaluated. Each plan was composed of two or four arcs of 6MV radiation beam with prescribed dose ranged from 1.8 to 9 Gy per fraction. Each plan was delivered continuously without gating and delivered with multiple interruptions by the ResponseTM gating module with a 20 or 30 second breath-holding period. MapCheck2 and Gafchromic EBT3 films sandwiched in MapPHAN were used to measure the delivered dose with and without gating. Films were scanned on a flatbed color scanner, and red channel was extracted for film dosimetry. Gamma analysis was performed to analyze the dosimetrical accuracy of the radiation delivery with gating. Results: The measured doses with gating remarkably agree with the planned dose distributions in the results of gamma index passing rate (within 20% isodose; >98% for 3%/3mm and >92% for 2%/2mm in MapCheck2, and >91% for 3%/3mm criteria in EBT3 film except one case which was for large target and highly modulated). No significant difference (student t-test: p-value < 0.0005) was shown between the doses delivered with and without gating. There was no indication of radiation gap or overlapping during deliver interruption in film dosimetry. Conclusion: The Response™ gating system can be safely used during VMAT treatment. The accurate performance of the gating system linked to ABC can contribute to ITV reduction for SBRT using VMAT.

The feasibility of 10 keV X-ray as radiation source in total dose response radiation test

International Nuclear Information System (INIS)

Li Ruoyu; Li Bin; Luo Hongwei; Shi Qian

2005-01-01

The standard radiation source utilized in traditional total dose response radiation test is 60 Co, which is environment-threatening. X-rays, as a new radiation source, has the advantages such as safety, precise control of dose rate, strong intensity, possibility of wafer-level test or even on-line test, which greatly reduce cost for package, test and transportation. This paper discussed the feasibility of X-rays replacing 60 Co as the radiation source, based on the radiation mechanism and the effects of radiation on gate oxide. (authors)

Imaging escape gated MPWC for hard X-ray astronomy

Energy Technology Data Exchange (ETDEWEB)

Ubertini, P.; Bazzano, A.; Boccaccini, L.; La Padula, C.; Mastropietro, M.; Patriarca, R.; Polcaro, V.F.; Barbareschi, L.; Perotti, F.; Villa, G.

1983-11-15

A scientific forward step in the hard X-ray and soft gamma-ray astronomy will only be possible with the use of a new generation of space borne instruments. Their main characteristics have to be the two-dimensional imaging capability over a large collecting area and the fine spectral resolution in order to discriminate between the weak signal coming from cosmic sources to be detected and the strong background induced by cosmic rays, in the space environment, on the detector. To reach this goal we have developed a new hard X-ray position sensitive proportional counter operating with the escape gate technique in the range 15-150 keV, to be used together with a pseudo-random coded mask in order to obtain sky images. The detector is a high pressure (5 bar) xenon-argon-isobutane filled chamber with a spatial resolution of 30x2 mm and a spectral resolution of 5% at 60 keV on the sensitive area of 3000 cm/sup 2/.

Prospectively ECG-triggered sequential dual-source coronary CT angiography in patients with atrial fibrillation: comparison with retrospectively ECG-gated helical CT

Energy Technology Data Exchange (ETDEWEB)

Xu, Lei; Yang, Lin; Zhang, Zhaoqi [Capital Medical University, Department of Radiology, Beijing Anzhen Hospital, Beijing (China); Wang, Yining; Jin, Zhengyu [Chinese Academy of Medical Sciences, Department of Radiology, Peking Union Medical College Hospital, Beijing (China); Zhang, Longjiang; Lu, Guangming [Nanjing University, Department of Medical Imaging, Jinling Hospital, Clinical School of Medical College, Nanjing, Jiangsu (China)

2013-07-15

To investigate the feasibility of applying prospectively ECG-triggered sequential coronary CT angiography (CCTA) to patients with atrial fibrillation (AF) and evaluate the image quality and radiation dose compared with a retrospectively ECG-gated helical protocol. 100 patients with persistent AF were enrolled. Fifty patients were randomly assigned to a prospective protocol and the other patients to a retrospective protocol using a second-generation dual-source CT (DS-CT). Image quality was evaluated using a four-point grading scale (1 = excellent, 2 = good, 3 = moderate, 4 = poor) by two reviewers on a per-segment basis. The coronary artery segments were considered non-diagnostic with a quality score of 4. The radiation dose was evaluated. Diagnostic segment rate in the prospective group was 99.4 % (642/646 segments), while that in the retrospective group was 96.5 % (604/626 segments) (P < 0.001). Effective dose was 4.29 {+-} 1.86 and 11.95 {+-} 5.34 mSv for each of the two protocols (P < 0.001), which was a 64 % reduction in the radiation dose for prospective sequential imaging compared with retrospective helical imaging. In AF patients, prospectively ECG-triggered sequential CCTA is feasible using second-generation DS-CT and can decrease >60 % radiation exposure compared with retrospectively ECG-gated helical imaging while improving diagnostic image quality. (orig.)

200 ps FWHM and 100 MHz repetition rate ultrafast gated camera for optical medical functional imaging

Science.gov (United States)

Uhring, Wilfried; Poulet, Patrick; Hanselmann, Walter; Glazenborg, René; Zint, Virginie; Nouizi, Farouk; Dubois, Benoit; Hirschi, Werner

2012-04-01

The paper describes the realization of a complete optical imaging device to clinical applications like brain functional imaging by time-resolved, spectroscopic diffuse optical tomography. The entire instrument is assembled in a unique setup that includes a light source, an ultrafast time-gated intensified camera and all the electronic control units. The light source is composed of four near infrared laser diodes driven by a nanosecond electrical pulse generator working in a sequential mode at a repetition rate of 100 MHz. The resulting light pulses, at four wavelengths, are less than 80 ps FWHM. They are injected in a four-furcated optical fiber ended with a frontal light distributor to obtain a uniform illumination spot directed towards the head of the patient. Photons back-scattered by the subject are detected by the intensified CCD camera; there are resolved according to their time of flight inside the head. The very core of the intensified camera system is the image intensifier tube and its associated electrical pulse generator. The ultrafast generator produces 50 V pulses, at a repetition rate of 100 MHz and a width corresponding to the 200 ps requested gate. The photocathode and the Micro-Channel-Plate of the intensifier have been specially designed to enhance the electromagnetic wave propagation and reduce the power loss and heat that are prejudicial to the quality of the image. The whole instrumentation system is controlled by an FPGA based module. The timing of the light pulses and the photocathode gating is precisely adjustable with a step of 9 ps. All the acquisition parameters are configurable via software through an USB plug and the image data are transferred to a PC via an Ethernet link. The compactness of the device makes it a perfect device for bedside clinical applications.

Stanford, Duke, Rice,... and Gates?

Science.gov (United States)

Carey, Kevin

2009-01-01

This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…