High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

Science.gov (United States)

Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

2018-06-01

The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

Silicon radiation detector

International Nuclear Information System (INIS)

Benc, I.; Kerhart, J.; Kopecky, J.; Krca, P.; Veverka, V.; Weidner, M.; Weinova, H.

1992-01-01

The silicon radiation detector, which is designed for the detection of electrons with energies above 500 eV and of radiation within the region of 200 to 1100 nm, comprises a PIN or PNN + type photodiode. The active acceptor photodiode is formed by a detector surface of shallow acceptor diffusion surrounded by a collector band of deep acceptor diffusion. The detector surface of shallow P-type diffusion with an acceptor concentration of 10 15 to 10 17 atoms/cm 3 reaches a depth of 40 to 100 nm. One sixth to one eighth of the collector band width is overlapped by the P + collector band at a width of 150 to 300 μm with an acceptor concentration of 10 20 to 10 21 atoms/cm 3 down a depth of 0.5 to 3 μm. This band is covered with a conductive layer, of NiCr for instance. (Z.S.)

Semiconductor scintillator detector for gamma radiation

International Nuclear Information System (INIS)

Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S.

2015-01-01

Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

Application of PIN diodes in Physics Research

International Nuclear Information System (INIS)

Ramirez-Jimenez, F. J.; Mondragon-Contreras, L.; Cruz-Estrada, P.

2006-01-01

A review of the application of PIN diodes as radiation detectors in different fields of Physics research is presented. The development and research in semiconductor technology, the use of PIN diodes in particle counting, X-and γ-ray spectroscopy, medical applications and charged particle spectroscopy are considered. Emphasis is made in the activities realized in the different research and development Mexican institutions dealing with this kind of radiation detectors

Semiconductor scintillator detector for gamma radiation; Detector cintilador semicondutor para radiacao gama

Energy Technology Data Exchange (ETDEWEB)

Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S., E-mail: ftvdl@ufrgs.br, E-mail: borges@ufrgs.br, E-mail: jorge.zabadal@ufrgs.br [Universidade Federal do Rio Grande do Sul (GENUC/DEMEC/UFRGS), Porto Alegre, RS (Brazil). Grupo de Estudos Nucleares. Departamento de Engenharia Mecanica

2015-07-01

Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

Performance of a high-resolution CsI(Tl)-PIN readout detector

International Nuclear Information System (INIS)

Kudenko, Yu.G.; Imazato, J.

1992-10-01

A study of a large-volume CsI(Tl) detector with a PIN diode readout was carried out. Our results show a light output of ≤20000 photoelectrons/MeV, an equivalent noise charge (rms) of about 900 electrons, and an equivalent noise level of ≤ 60 keV. We obtained an energy resolution of 11.2% (fwhm) for 1275 keV gamma rays from a 22 Na source. The characteristics of the PIN - preamplifier system as well as the parameters of a small CsI(Tl) - PIN detector with a direct and wavelength shifter readout are also reported. (author)

Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

Science.gov (United States)

Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

2013-09-01

Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation

Energy Technology Data Exchange (ETDEWEB)

Sopko, V. [Hospital Na Bulovce, Department of Radiological Physics, Budinova 2, CZ-18081 Prague 8 (Czech Republic); Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, CZ 12800 Prague 2 (Czech Republic); Sopko, B., E-mail: bruno.sopko@cern.ch [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, CZ 16000 Prague 6 (Czech Republic); Faculty of Production Technology and Management, J. E. Purkyně Univerzity in Ústí nad Labem, Na Okraji 1001, 400 01 Ústí nad Labem (Czech Republic); Chren, D. [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, CZ 16000 Prague 6 (Czech Republic); Dammer, J. [Hospital Na Bulovce, Department of Radiological Physics, Budinova 2, CZ-18081 Prague 8 (Czech Republic); Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, CZ 12800 Prague 2 (Czech Republic); Charles University in Prague, First Faculty of Medicine, Salmovská 1,CZ-12000 Prague 2 (Czech Republic)

2013-12-01

Studies of radiation induced defects continue to be relevant as they find an ever greater application due to the increasing radiation doses to which semiconductor detectors are exposed. Efforts of figuring out the changes due to high radiation doses provide the fundamental motivation for this type of experiments. The PIN diode is described, and a developmental disorder caused thereto by 60Co source gamma quanta ranging from 100 kGy to 1 MGy. The calibration curve shows the effect of disturbances on the volt-ampere characteristics as a function of the dose of gamma radiation. The results are compared with earlier published data. Highlights: •We have studied Si PIN diode dosimeters irradiated by gamma. •We measured DLTS spectra and calculated energy traps caused by gamma irradiation. •Increasing dose caused creation of new traps and disappearance of others.

Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

International Nuclear Information System (INIS)

Zhou, C.Z.; Warburton, W.K.

1996-01-01

Two processes for the fabrication of silicon p-i-n diode radiation detectors are described and compared. Both processes are compatible with conventional integrated-circuit fabrication techniques and yield very low leakage currents. Devices made from the process using boron thermal doping have about a factor of 2 lower leakage current than those using boron ion implantation. However, the boron thermal doping process requires additional process steps to remove boron skins. (orig.)

Performance of semiconductor radiation sensors for simple and low-cost radiation detector

International Nuclear Information System (INIS)

Tanimura, Yoshihiko; Birumachi, Atsushi; Yoshida, Makoto; Watanabe, Tamaki

2008-01-01

In order to develop a simple but reliable radiation detector for the general public, photon detection performances of radiation sensors have been studied in photon calibration fields and by Monte Carlo simulations. A silicon p-i-n photodiode and a CdTe detector were selected for the low cost sensors. Their energy responses to ambient dose equivalent H * (10) were evaluated over the energy range from 60 keV to 2 MeV. The response of the CdTe decreases markedly with increasing photon energy. On the other hand, the photodiode has the advantage of almost flat response above 150 keV. The sensitivities of these sensors are 4 to 6 cpm for the natural radiation. Detection limits of the radiation level are low enough to know the extreme increase of radiation due to emergency situations of nuclear power plants, fuel treatment facilities and so on. (author)

Development of a Compact Gamma-ray Detector for a Neural-Network Radiation Monitoring

Energy Technology Data Exchange (ETDEWEB)

Kim, H. S.; Ha, J. H.; Lee, K. H. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lee, C. H. [Hanyang Univ., Seoul (Korea, Republic of)

2012-03-15

Radiation monitoring is very important to secure safety in nuclear-related facilities and against nuclear terrorism. For wide range of radiation monitoring, neutral network system of radiation detection is most efficient way. Thus, a compact radiation detector is useful to install in wide range to be concerned. A compact gamma-ray detector was fabricated by using a CsI(Tl) scintillator, which was matched with the formerly developed PIN photodiode, for a neural network radiation monitoring. At room temperature, the fabricated compact gamma-ray detector demonstrates an energy resolution of 13.3 % for 662 keV 6.9% for 1330 keV. The compactness, the low-voltage power consumption and the physical hardness are very useful features for a neural network radiation monitoring. In this study, characteristics of a fabricated compact gamma-ray detector were presented. An important aspect to consider in a neural-network radiation monitoring such as reaction probability of the fabricated compact detector for angle of incident gamma-ray was also addressed.

Department of Radiation Detectors - Overview

International Nuclear Information System (INIS)

Piekoszewski, J.

1997-01-01

Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author)

Department of Radiation Detectors - Overview

Energy Technology Data Exchange (ETDEWEB)

Piekoszewski, J. [Soltan Inst. for Nuclear Studies, Otwock-Swierk (Poland)

1997-12-31

Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author).

Testing of the KRI-developed Silicon PIN Radioxenon Detector

International Nuclear Information System (INIS)

Foxe, Michael P.; McIntyre, Justin I.

2015-01-01

Radioxenon detectors are used for the verification of the Comprehensive Nuclear-Test-Ban Treaty (CTBT) in a network of detectors throughout the world called the International Monitoring System (IMS). The Comprehensive Nuclear-Test-Ban Treaty Organization (CTBTO) Provisional Technical Secretariat (PTS) has tasked Pacific Northwest National Laboratory (PNNL) with testing a V.G. Khlopin Radium Institute (KRI) and Lares Ltd-developed Silicon PIN detector for radioxenon detection. PNNL measured radioxenon with the silicon PIN detector and determined its potential compared to current plastic scintillator beta cells. While the PNNL tested Si detector experienced noise issues, a second detector was tested in Russia at Lares Ltd, which did not exhibit the noise issues. Without the noise issues, the Si detector produces much better energy resolution and isomer peak separation than a conventional plastic scintillator cell used in the SAUNA systems in the IMS. Under the assumption of 1 cm 3 of Xe in laboratory-like conditions, 24-hr count time (12-hr count time for the SAUNA), with the respective shielding the minimum detectable concentrations for the Si detector tested by Lares Ltd (and a conventional SAUNA system) were calculated to be: 131m Xe - 0.12 mBq/m 3 (0.12 mBq/m 3 ); 133 Xe - 0.18 mBq/m 3 (0.21 mBq/m 3 ); 133m Xe - 0.07 mBq/m 3 (0.15 mBq/m 3 ); 135 Xe - 0.45 mBq/m 3 (0.67 mBq/m 3 ). Detection limits, which are one of the important factors in choosing the best detection technique for radioxenon in field conditions, are significantly better than for SAUNA-like detection systems for 131m Xe and 133m Xe, but similar for 133 Xe and 135 Xe. Another important factor is the amount of ''memory effect'' or carry over signal from one radioxenon measurement to the subsequent sample. The memory effect is reduced by a factor of 10 in the Si PIN detector compared to the current plastic scintillator cells. There is potential for further reduction with the

Silicon PIN diode based electron-gamma coincidence detector system for Noble Gases monitoring.

Science.gov (United States)

Khrustalev, K; Popov, V Yu; Popov, Yu S

2017-08-01

We present a new second generation SiPIN based electron-photon coincidence detector system developed by Lares Ltd. for use in the Noble Gas measurement systems of the International Monitoring System and the On-site Inspection verification regimes of the Comprehensive Nuclear-Test Ban Treaty (CTBT). The SiPIN provide superior energy resolution for electrons. Our work describes the improvements made in the second generation detector cells and the potential use of such detector systems for other applications such as In-Situ Kr-85 measurements for non-proliferation purposes. Copyright © 2017 Elsevier Ltd. All rights reserved.

Field profile tailoring in a-Si:H radiation detectors

International Nuclear Information System (INIS)

Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Quershi, S.; Wildermuth, D.; Street, R.A.

1990-03-01

The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes. 10 refs., 7 figs

Alpha particles spectrometer with photodiode PIN; Espectrometro de particulas alfa con fotodiodo PIN

Energy Technology Data Exchange (ETDEWEB)

Chacon R, A.; Hernandez V, R.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidades Academicas de Estudios Nucleares e Ingenieria Electrica, Calle Cipres No. 10, Fracc. La Penuela, 09869 Zacatecas (Mexico); Ramirez G, J. [Instituto Nacional de Estadistica Geografia e Informatica, Direccion General de Innovacion y Tecnologia de Informacion, Av. Heroes de Nacozari Sur 2301, Fracc. Jardines del Parque, 20276 Aguascalientes (Mexico)], e-mail: achruiz@hotmail.com

2009-10-15

The radiation propagates in form of electromagnetic waves or corpuscular radiation; if the radiation energy causes ionization in environment that crosses it is considered ionizing radiation. To detect radiation several detectors types are used, if the radiation are alpha particles are used detectors proportional type or trace elements. In this work the design results, construction and tests of an alpha particles spectrometer are presented, which was designed starting from a photodiode PIN type. The system design was simulated with a code for electronic circuits. With results of simulation phase was constructed the electronic phase that is coupled to a multichannel analyzer. The resulting electronic is evaluated analyzing the electronic circuit performance before an alphas triple source and alpha radiation that produce two smoke detectors of domestic use. On the tests phase we find that the system allows obtain, in a multichannel, the pulses height spectrum, with which we calibrate the system. (Author)

On the suitability of Peltier cooled Si-PIN detectors in transmission experiments

International Nuclear Information System (INIS)

Murty, V.R.K.; Devan, K.R.S.

2001-01-01

The performance of a Peltier cooled Si-PIN detector is compared with that for a Freolectric cooled Si(Li) detector, references being made to transmission experiments that evaluate total cross sections at low photon energies. The results of these measurements are discussed. (author)

Study of PIN diode energy traps created by neutrons

International Nuclear Information System (INIS)

Sopko, V; Dammer, J; Sopko, B; Chren, D

2013-01-01

Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps.

High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

International Nuclear Information System (INIS)

Jing, T.; Lawrence Berkeley Lab., CA

1995-05-01

Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ∼20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 micros. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth

High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

Energy Technology Data Exchange (ETDEWEB)

Jing, Tao [Univ. of California, Berkeley, CA (United States). Dept. of Engineering-Nuclear Engineering

1995-05-01

Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ~20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

Radiation monitoring with CVD diamonds and PIN diodes at BaBar

Energy Technology Data Exchange (ETDEWEB)

Bruinsma, M. [University of California Irvine, Irvine, CA 92697 (United States); Burchat, P. [Stanford University, Stanford, CA 94305-4060 (United States); Curry, S. [University of California Irvine, Irvine, CA 92697 (United States)], E-mail: scurry@slac.stanford.edu; Edwards, A.J. [Stanford University, Stanford, CA 94305-4060 (United States); Kagan, H.; Kass, R. [Ohio State University, Columbus, OH 43210 (United States); Kirkby, D. [University of California Irvine, Irvine, CA 92697 (United States); Majewski, S.; Petersen, B.A. [Stanford University, Stanford, CA 94305-4060 (United States)

2007-12-11

The BaBar experiment at the Stanford Linear Accelerator Center has been using two polycrystalline chemical vapor deposition (pCVD) diamonds and 12 silicon PIN diodes for radiation monitoring and protection of the Silicon Vertex Tracker (SVT). We have used the pCVD diamonds for more than 3 years, and the PIN diodes for 7 years. We will describe the SVT and SVT radiation monitoring system as well as the operational difficulties and radiation damage effects on the PIN diodes and pCVD diamonds in a high-energy physics environment.

Symmetric Pin Diversion Detection using a Partial Defect Detector (PDET)

International Nuclear Information System (INIS)

Sitaraman, S.; Ham, Y.S.

2009-01-01

Since the signature from the Partial Defect Detector (PDET) is principally dependent on the geometric layout of the guide tube locations, the capability of the technique in detecting symmetric diversion of pins needs to be determined. The Monte Carlo simulation study consisted of cases where pins were removed in a symmetric manner and the resulting signatures were examined. In addition to the normalized gamma-to-neutron ratios, the neutron and gamma signatures normalized to their maximum values, were also examined. Examination of the shape of the three curves as well as of the peak-to-valley differences in excess of the maximum expected in intact assemblies, indicated pin diversion. A set of simulations with various symmetric patterns of diversion were examined. The results from these studies indicated that symmetric diversions as low as twelve percent could be detected by this methodology

Alpha particles spectrometer with photodiode PIN

International Nuclear Information System (INIS)

Chacon R, A.; Hernandez V, R.; Hernandez D, V. M.; Vega C, H. R.; Ramirez G, J.

2009-10-01

The radiation propagates in form of electromagnetic waves or corpuscular radiation; if the radiation energy causes ionization in environment that crosses it is considered ionizing radiation. To detect radiation several detectors types are used, if the radiation are alpha particles are used detectors proportional type or trace elements. In this work the design results, construction and tests of an alpha particles spectrometer are presented, which was designed starting from a photodiode PIN type. The system design was simulated with a code for electronic circuits. With results of simulation phase was constructed the electronic phase that is coupled to a multichannel analyzer. The resulting electronic is evaluated analyzing the electronic circuit performance before an alphas triple source and alpha radiation that produce two smoke detectors of domestic use. On the tests phase we find that the system allows obtain, in a multichannel, the pulses height spectrum, with which we calibrate the system. (Author)

Modeling of radiation damage recovery in particle detectors based on GaN

Energy Technology Data Exchange (ETDEWEB)

Gaubas, E., E-mail: eugenijus.gaubas@ff.vu.lt; Ceponis, T.; Pavlov, J.

2015-12-15

The pulsed characteristics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift–diffusion models. The drift–diffusion current simulations have been implemented by employing the commercial software package Synopsys TCAD Sentaurus. The bipolar drift regime has been analyzed. The possible internal gain in charge collection through carrier multiplication processes determined by impact ionization has been considered in order to compensate carrier lifetime reduction due to radiation defects introduced into GaN material of detector.

Sensitive pre-amplifier to load for Pin diodes; Pre-amplificador sensible a carga para diodos PIN

Energy Technology Data Exchange (ETDEWEB)

Jacobo V, R. Y.; Hernandez D, V. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98060 Zacatecas (Mexico); Ramirez J, F. J., E-mail: yoshimarv@gmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2013-10-15

The electronic instrumentation is indispensable for the measurement and characterization of the radiation. By means of this essential characteristics of the radiation are determined, as activity and their energy components. The nuclear instrumentation is based on the technical characteristics of the radiation detectors and the electronic devices associates (amplifiers, ana logical and digital converters, multichannel analyzers, etc.) The radiation detectors are very important instruments in fields as the nuclear physics, medicine, radiological protection, industry and in other fields, since they are the only method to capture the radiation and to be able to quantify it in precise form. To detect radiation diverse detector types are used, as the semiconductor type, inside them are the photodiodes type Pin. In this work the results that were obtained of the design, simulation, construction and tests of a preamplifier that was designed starting from a photodiode type Pin are presented. The system was designed and simulated with a program for electronic circuits, in this were carried out many tests being obtained a compact design and achieving the best necessary characteristics for its optimization. With the results of the simulation phase the electronics phase was built, which was couples to a spectroscopic amplifier and a multichannel analyzer. The total of the system was evaluated analyzing its performance before a triple source of alphas. Of the tests phase we find that the system allows obtaining, in a multichannel analyzer, the pulses height spectrum, with a good resolution and with this was calibrated the multichannel analyzer.

Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

International Nuclear Information System (INIS)

Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

1989-05-01

Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs

Compact CsI(Tl)-PIN detectors for nuclear physics applications

International Nuclear Information System (INIS)

Bhattacharjee, T.; Basu, S.K.; Bhattacharyya, S.; Chanda, S.; Chowdhury, A.; Mukhopadhyay, P.; Chatterjee, M.B.; Dey, C.C.; Mukherjee, Anjali

2005-01-01

Prototype detector elements, based on CsI(Tl) - Si PIN diodes, have been fabricated and optimized for use in a near 4p charged particle multiplicity filter array. The important aspects of fabrication of such compact detector elements along with the off-line and on-line performance test results will be reported. An early implementation of the proposed multiplicity filter array will be described. The planned use of the array in conjunction with the Indian National Gamma Array (INGA) as a reaction filter in high spin spectroscopic studies would be stressed. (author)

Compound Semiconductor Radiation Detector

International Nuclear Information System (INIS)

Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

2005-01-01

In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

Radiation detectors laboratory

International Nuclear Information System (INIS)

Ramirez J, F.J.

1996-01-01

The National Institute for Nuclear Research has established a Radiation detector laboratory that has the possibility of providing to the consultants on the handling and applications of the nuclear radiation detectors. It has special equipment to repair the radiation detectors used in spectroscopy as the hyper pure Germanium for gamma radiation and the Lithium-silica for X-rays. There are different facilities in the laboratory that can become useful for other institutions that use radiation detectors. This laboratory was created to satisfy consultant services, training and repairing of the radiation detectors both in national and regional levels for Latin America. The laboratory has the following sections: Nuclear Electronic Instrumentation; where there are all kind of instruments for the measurement and characterization of detectors like multichannel analyzers of pulse height, personal computers, amplifiers and nuclear pulse preamplifiers, nuclear pulses generator, aleatories, computer programs for radiation spectra analysis, etc. High vacuum; there is a vacuum escape measurer, two high vacuum pumps to restore the vacuum of detectors, so the corresponding measurers and the necessary tools. Detectors cleaning; there is an anaerobic chamber for the detectors handling at inert atmosphere, a smoke extraction bell for cleaning with the detector solvents. Cryogenic; there are vessels and tools for handling liquid nitrogen which is used for cooling the detectors when they required it. (Author)

Radiation detectors

International Nuclear Information System (INIS)

2013-01-01

This sixth chapter presents the operational principles of the radiation detectors; detection using photographic emulsions; thermoluminescent detectors; gas detectors; scintillation detectors; liquid scintillation detectors; detectors using semiconductor materials; calibration of detectors; Bragg-Gray theory; measurement chain and uncertainties associated to measurements

High performance p-i-n CdTe and CdZnTe detectors

CERN Document Server

Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

1999-01-01

A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

Reliability studies on Si PIN photodiodes under Co-60 gamma radiation

Energy Technology Data Exchange (ETDEWEB)

Prabhakara Rao, Y. P. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore, Karnataka-560013 (India) and Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Praveen, K. C.; Gnana Prakash, A. P. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Rani, Y. Rejeena [Integrated Circuits Division, Bharat Electronics Limited, Bangalore, Karnataka-560013 (India)

2013-02-05

Silicon PIN photodiodes were fabricated with 250 nm SiO{sub 2} antireflective coating (ARC). The changes in the electrical characteristics, capacitance-voltage characteristics and spectral response after gamma irradiation are systematically studied to estimate the radiation tolerance up to 10 Mrad. The different characteristics studied in this investigation demonstrate that Si PIN photodiodes are suitable for high radiation environment.

Sensitive pre-amplifier to load for Pin diodes

International Nuclear Information System (INIS)

Jacobo V, R. Y.; Hernandez D, V.; Ramirez J, F. J.

2013-10-01

The electronic instrumentation is indispensable for the measurement and characterization of the radiation. By means of this essential characteristics of the radiation are determined, as activity and their energy components. The nuclear instrumentation is based on the technical characteristics of the radiation detectors and the electronic devices associates (amplifiers, ana logical and digital converters, multichannel analyzers, etc.) The radiation detectors are very important instruments in fields as the nuclear physics, medicine, radiological protection, industry and in other fields, since they are the only method to capture the radiation and to be able to quantify it in precise form. To detect radiation diverse detector types are used, as the semiconductor type, inside them are the photodiodes type Pin. In this work the results that were obtained of the design, simulation, construction and tests of a preamplifier that was designed starting from a photodiode type Pin are presented. The system was designed and simulated with a program for electronic circuits, in this were carried out many tests being obtained a compact design and achieving the best necessary characteristics for its optimization. With the results of the simulation phase the electronics phase was built, which was couples to a spectroscopic amplifier and a multichannel analyzer. The total of the system was evaluated analyzing its performance before a triple source of alphas. Of the tests phase we find that the system allows obtaining, in a multichannel analyzer, the pulses height spectrum, with a good resolution and with this was calibrated the multichannel analyzer

Nuclear radiation detectors

International Nuclear Information System (INIS)

Kapoor, S.S.; Ramamurthy, V.S.

1986-01-01

The present monograph is intended to treat the commonly used detectors in the field of nuclear physics covering important developments of the recent years. After a general introduction, a brief account of interaction of radiation with matter relevant to the processes in radiation detection is given in Chapter II. In addition to the ionization chamber, proportional counters and Geiger Mueller counters, several gas-filled detectors of advanced design such as those recently developed for heavy ion physics and other types of studies have been covered in Chapter III. Semiconductor detectors are dealt with in Chapter IV. The scintillation detectors which function by sensing the photons emitted by the luminescence process during the interaction of the impinging radiation with the scintillation detector medium are described in Chapter V. The topic of neutron detectors is covered in Chapter VI, as in this case the emphasis is more on the method of neutron detection rather than on detector type. Electronic instrumentation related to signal pulse processing dealt with in Chapter VII. The track etch detectors based on the visualization of the track of the impinging charge particle have also been briefly covered in the last chapter. The scope of this monograph is confined to detectors commonly used in low and medium energy nuclear physics research and applications of nuclear techniques. The monograph is intended for post-graduate students and those beginning to work with the radiation detectors. (author)

Radiation emitter-detector package

International Nuclear Information System (INIS)

O'Brien, J.T.; Limm, A.C.; Nyul, P.; Tassia, V.S. Jr.

1978-01-01

Mounted on the metallic base of a radiation emitter-detector is a mounting block is a first projection, and a second projection. A radiation detector is on the first projection and a semiconductor electroluminescent device, i.e., a radiation emitter, is on the second projection such that the plane of the recombination region of the electroluminescent device is perpendicular to the radiation incident surface of the radiation detector. The electroluminescent device has a primary emission and a secondary emission in a direction different from the primary emission. A radiation emitter-detector package as described is ideally suited to those applications wherein the secondary radiation of the electroluminescent device is fed into a feedback circuit regulating the biasing current of the electroluminescent device

Radiation detectors laboratory

International Nuclear Information System (INIS)

Ramirez J, F.J.

1997-01-01

The Radiation detectors laboratory was established with the assistance of the International Atomic Energy Agency which gave this the responsibility to provide its services at National and regional level for Latin America and it is located at the ININ. The more expensive and delicate radiation detectors are those made of semiconductor, so it has been put emphasis in the use and repairing of these detectors type. The supplied services by this laboratory are: selection consultant, detectors installation and handling and associated systems. Installation training, preventive and corrective maintenance of detectors and detection systems calibration. (Author)

Amorphous silicon based radiation detectors

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

1991-07-01

We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

Self-powered radiation detector

International Nuclear Information System (INIS)

Playfoot, K.C.; Bauer, R.F.; Goldstein, N.P.

1980-01-01

This invention relates to a self powered radiation detector requiring no excitation potential to generate a signal indicating a radiation flux. Such detectors comprise two electrically insulated electrodes, at a distance from each other. These electrodes are made of conducting materials having a different response for neutron and/or gamma ray radiation flux levels, as in nuclear power stations. This elongated detector generates an electric signal in terms of an incident flux of radiations cooperating with coaxial conductors insulated from each other and with different radiation reaction characteristics. The conductor with the greatest reaction to the radiations forms the central emitting electrode and the conductor with the least reaction to the radiations forms a tubular coaxial collecting electrode. The rhodium or cobalt tubular emitting electrode contains a ductile central conducting cable placed along the longitudinal axis of the detector. The latter is in high nickel steel with a low reaction to radiation [fr

Very high resolution detection of gamma radiation at room-temperature using P-I-N detectors of CdZnTe and HgCdTe

Science.gov (United States)

Hamilton, W. J.; Rhiger, D. R.; Sen, S.; Kalisher, M. H.; James, K.; Reid, C. P.; Gerrish, V.; Baccash, C. O.

1994-08-01

High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The p-i-n structure was obtained by liquid-phase epitaxial growth of p and n doped HgCdTe layers on 'intrinsic' CdZnTe material about 1mm thick and approximately 25mm square. Curve tracing shows I-V curves with diode characteristics having resistivity above 1011 Omega -cm and leakage current of less than 400 pA to about - 60V reverse bias on a typical test piece approximately 5 x 8 x 1 mm. Spectra of similar test pieces have been obtained at room temperature with various nuclear isotopic sources over the range of 22 keV to 662 keV which show exceptionally high energy resolution. Resolution as good as 1.82% FWHM was obtained for the 356 keV line of 133Ba with a P/V = 3.4. The performance of these detectors combined with contemporary infrared technology capable of fabricating 2D arrays of these II-VI materials opens up manifold exciting applications in astrophysics, medical, industrial, environmental, and defense spectroscopy and imaging.

Study of the Radiation-Hardness of VCSEL and PIN

CERN Document Server

Gan, K K; Fernando, W; Kagan, H P; Kass, R D; Lebbai, M R M; Merritt, H; Moore, J R; Nagarkar, A; Rizatdinova, F; Skubic, P L; Smith, D S; Strang, M

2009-01-01

The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.

Foam radiators for transition radiation detectors

International Nuclear Information System (INIS)

Chernyatin, V.; Dolgoshein, B.; Gavrilenko, I.; Potekhin, M.; Romaniouk, A.; Sosnovtsev, V.

1993-01-01

A wide variety of foam radiators, potentially useful in the design of a transition radiation detector, the possible particle identification tool in collider experiments, have been tested in the beam. Various characteristics of these radiators are compared, and the conclusion is reached that certain brands of polyethylene foam are best suited for use in the detector. Comparison is made with a 'traditional' radiator, which is a periodic structure of plastic foils. (orig.)

Simulations of Si-PIN photodiode based detectors for underground explosives enhanced by ammonium nitrate

Science.gov (United States)

Yücel, Mete; Bayrak, Ahmet; Yücel, Esra Barlas; Ozben, Cenap S.

2018-02-01

Massive Ammonium Nitrate (NH4-NO3) based explosives buried underground are commonly used in terror attacks. These explosives can be detected using neutron scattering method with some limitations. Simulations are very useful tools for designing a possible detection system for these kind of explosives. Geant4 simulations were used for generating neutrons at 14 MeV energy and tracking them through the scattering off the explosive embedded in soil. Si-PIN photodiodes were used as detector elements in the design for their low costs and simplicity for signal readout electronics. Various neutron-charge particle converters were applied on to the surface of the photodiodes to increase the detection efficiency. Si-PIN photodiodes coated with 6LiF provided the best result for a certain energy interval. Energy depositions in silicon detector from all secondary particles generated including photons were taken into account to generate a realistic background. Humidity of soil, one of the most important parameter for limiting the detection, was also studied.

Radiation meter

Energy Technology Data Exchange (ETDEWEB)

Burgess, P H

1990-05-30

Measuring means comprising first and second silicon PIN diode detectors both being covered with a thin layer of conducting material and the second detector being additionally covered with a relatively thick layer of material, the thickness being chosen such that beta radiation dose rate can be measured in beta radiation fields of high or medium energy, and in the presence of X and gamma radiation. (author). 2 figs.

Advanced Space Radiation Detector Technology Development

Science.gov (United States)

Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.

2013-01-01

The advanced space radiation detector development team at the NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of multiple solid-state detectors will result in an improved detector system in comparison to existing state-of-the-art instruments for the detection and monitoring of the space radiation field for deep space and aerospace applications.

Silicon radiation detectors

International Nuclear Information System (INIS)

Lutz, G.

1995-01-01

An introduction to and an overview of function principles and properties of semiconductor radiation detectors is attempted. The paper is addressed to people interested in detector development but not already experts in the field of semiconductor detectors. (orig.)

Radiation detectors laboratory; Laboratorio de detectores de radiacion

Energy Technology Data Exchange (ETDEWEB)

Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

1997-07-01

The Radiation detectors laboratory was established with the assistance of the International Atomic Energy Agency which gave this the responsibility to provide its services at National and regional level for Latin America and it is located at the ININ. The more expensive and delicate radiation detectors are those made of semiconductor, so it has been put emphasis in the use and repairing of these detectors type. The supplied services by this laboratory are: selection consultant, detectors installation and handling and associated systems. Installation training, preventive and corrective maintenance of detectors and detection systems calibration. (Author)

Basic Radiation Detectors. Chapter 6

Energy Technology Data Exchange (ETDEWEB)

Van Eijk, C. W.E. [Faculty of Applied Sciences, Delft University of Technology, Delft (Netherlands)

2014-12-15

Radiation detectors are of paramount importance in nuclear medicine. The detectors provide a wide range of information including the radiation dose of a laboratory worker and the positron emission tomography (PET) image of a patient. Consequently, detectors with strongly differing specifications are used. In this chapter, general aspects of detectors are discussed.

Characteristics of Si-PIN diode X-ray detector with DSP electronics

International Nuclear Information System (INIS)

Dutta, Juhi; Tapader, Srijita; Bisoi, Abhijit; Ray, Sudatta; Saha Sarkar, M.; Pramanik, Dibyadyuti; Saha, Archisman

2012-01-01

In the present work, the studies to investigate the features of PIN diodes detector coupled with a digital processor have been extended. At low energies, backscattered Compton peaks are close in energy to photo peak of the gamma of interest. Thus the backscattered peaks pose a serious problem in the analysis of spectra of low energy gamma rays. It has been initiated some measurements to quantitatively estimate the same as function of energy and Z of the scatterer. Recently there has been application of backscattering in high-resolution gamma backscatter imaging for technical applications

Solid state radiation detector system

International Nuclear Information System (INIS)

1977-01-01

A solid state radiation flux detector system utilizes a detector element, consisting of a bar of semiconductor having electrical conductance of magnitude dependent upon the magnitude of photon and charged particle flux impinging thereon, and negative feedback circuitry for adjusting the current flow through a light emitting diode to facilitate the addition of optical flux, having a magnitude decreasing in proportion to any increase in the magnitude of radiation (e.g. x-ray) flux incident upon the detector element, whereby the conductance of the detector element is maintained essentially constant. The light emitting diode also illuminates a photodiode to generate a detector output having a stable, highly linear response with time and incident radiation flux changes

Superlattice electroabsorption radiation detector

International Nuclear Information System (INIS)

Cooke, B.J.

1993-06-01

This paper provides a preliminary investigation of a new class of superlattice electroabsorption radiation detectors that employ direct optical modulation for high-speed, two-dimensional (2-D), high-resolution imaging. Applications for the detector include nuclear radiation measurements, tactical guidance and detection (laser radar), inertial fusion plasma studies, and satellite-based sensors. Initial calculations discussed in this paper indicate that a 1.5-μm (GaAlAs) multi-quantum-well (MQW) Fabry-Perot detector can respond directly to radiation of energies 1 eV to 10 KeV, and indirectly (with scattering targets) up through gamma, with 2-D sample rates on the order of 20 ps

Workshops on radiation imaging detectors

International Nuclear Information System (INIS)

Sochinskii, N.V.; Sun, G.C.; Kostamo, P.; Silenas, A.; Saynatjoki, A.; Grant, J.; Owens, A.; Kozorezov, A.G.; Noschis, E.; Van Eijk, C.; Nagarkar, V.; Sekiya, H.; Pribat, D.; Campbell, M.; Lundgren, J.; Arques, M.; Gabrielli, A.; Padmore, H.; Maiorino, M.; Volpert, M.; Lebrun, F.; Van der Putten, S.; Pickford, A.; Barnsley, R.; Anton, M.E.G.; Mitschke, M.; Gros d'Aillon, E.; Frojdh, C.; Norlin, B.; Marchal, J.; Quattrocchi, M.; Stohr, U.; Bethke, K.; Bronnimann, C.H.; Pouvesle, J.M.; Hoheisel, M.; Clemens, J.C.; Gallin-Martel, M.L.; Bergamaschi, A.; Redondo-Fernandez, I.; Gal, O.; Kwiatowski, K.; Montesi, M.C.; Smith, K.

2005-01-01

This document gathers the transparencies that were presented at the international workshop on radiation imaging detectors. 9 sessions were organized: 1) materials for detectors and detector structure, 2) front end electronics, 3) interconnected technologies, 4) space, fusion applications, 5) the physics of detection, 6) industrial applications, 7) synchrotron radiation, 8) X-ray sources, and 9) medical and other applications

Workshops on radiation imaging detectors

Energy Technology Data Exchange (ETDEWEB)

Sochinskii, N V; Sun, G C; Kostamo, P; Silenas, A; Saynatjoki, A; Grant, J; Owens, A; Kozorezov, A G; Noschis, E; Van Eijk, C; Nagarkar, V; Sekiya, H; Pribat, D; Campbell, M; Lundgren, J; Arques, M; Gabrielli, A; Padmore, H; Maiorino, M; Volpert, M; Lebrun, F; Van der Putten, S; Pickford, A; Barnsley, R; Anton, M E.G.; Mitschke, M; Gros d' Aillon, E; Frojdh, C; Norlin, B; Marchal, J; Quattrocchi, M; Stohr, U; Bethke, K; Bronnimann, C H; Pouvesle, J M; Hoheisel, M; Clemens, J C; Gallin-Martel, M L; Bergamaschi, A; Redondo-Fernandez, I; Gal, O; Kwiatowski, K; Montesi, M C; Smith, K

2005-07-01

This document gathers the transparencies that were presented at the international workshop on radiation imaging detectors. 9 sessions were organized: 1) materials for detectors and detector structure, 2) front end electronics, 3) interconnected technologies, 4) space, fusion applications, 5) the physics of detection, 6) industrial applications, 7) synchrotron radiation, 8) X-ray sources, and 9) medical and other applications.

Self-powered radiation detectors

International Nuclear Information System (INIS)

Goldstein, N.P.; Todt, W.H.

1982-01-01

A self-powered nuclear radiation detector has an emitter electrode of an alloy of a first major constituent metal having a desired high radiation response, and a second minor constituent which imparts to the alloy a desired thermal or mechanical characteristic without diminishing the desired high radiation response. A gamma responsive self-powered detector is detailed which has an emitter with lead as the major constituent, with the minor constituent selected from aluminum, copper, nickel, platinum, or zinc. (author)

Status of radiation detector and neutron monitor technology

CERN Document Server

Kim, Y K; Ha, J H; Han, S H; Hong, S B; Hwang, I K; Lee, W G; Moon, B S; Park, S H; Song, M H

2002-01-01

In this report, we describe the current states of the radiation detection technology, detectors for industrial application, and neutron monitors. We also survey the new technologies being applied to this field. The method to detect radiation is the measurement of the observable secondary effect from the interaction between incident radiation and detector material, such as ionization, excitation, fluorescence, and chemical reaction. The radiation detectors can be categorized into gas detectors, scintillation detectors, and semiconductor detectors according to major effects and main applications. This report contains the current status and operational principles of these detectors. The application fields of radiation detectors are industrial measurement system, in-core neutron monitor, medical radiation diagnostic device, nondestructive inspection device, environmental radiation monitoring, cosmic-ray measurement, security system, fundamental science experiment, and radiation measurement standardization. The st...

Radiation detector

International Nuclear Information System (INIS)

Gillies, W.

1980-01-01

The radiation detector for measuring e.g. a neutron flux consists of a central emitter, an insulating shell arranged around it, and a tube-shaped collector enclosing both. The emitter itself is composed of a great number of stranded, spiral wires of small diameter giving a defined flexibility to the detector. For emitter material Pt, Rh, V, Co, Ce, Os or Ta may be used. (DG) [de

Ionizing radiation detector

Science.gov (United States)

Thacker, Louis H.

1990-01-01

An ionizing radiation detector is provided which is based on the principle of analog electronic integration of radiation sensor currents in the sub-pico to nano ampere range between fixed voltage switching thresholds with automatic voltage reversal each time the appropriate threshold is reached. The thresholds are provided by a first NAND gate Schmitt trigger which is coupled with a second NAND gate Schmitt trigger operating in an alternate switching state from the first gate to turn either a visible or audible indicating device on and off in response to the gate switching rate which is indicative of the level of radiation being sensed. The detector can be configured as a small, personal radiation dosimeter which is simple to operate and responsive over a dynamic range of at least 0.01 to 1000 R/hr.

Electret radiation detector

International Nuclear Information System (INIS)

Kubu, M.

1981-01-01

The electret radiation detector consists of 30 to 35% of bee wax and of 65 to 70% of colophony. It is mainly the induction conductivity of charo.es between the dipoles in the electret which is used for detection. In the manufacture of the detector, the average atomic number of the electret can be altered by adding various compounds, such as ZnO, which also increases efficiency for gamma radiation. An alpha or beta emitter can also be built-in in the electret. (B.S.)

Semiconductor ionizino. radiation detectors

International Nuclear Information System (INIS)

1982-01-01

Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

Signal and noise analysis of a-Si:H radiation detector-amplifier system

International Nuclear Information System (INIS)

Cho, Gyuseong.

1992-03-01

Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was ∼400 MHz and the noise charge ∼1000 electrons at a 1 μsec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of ∼0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB

Signal and noise analysis of a-Si:H radiation detector-amplifier system

Energy Technology Data Exchange (ETDEWEB)

Cho, Gyuseong [Univ. of California, Berkeley, CA (United States)

1992-03-01

Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was ~400 MHz and the noise charge ~1000 electrons at a 1 μsec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of ~0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB.

Signal and noise analysis of a-Si:H radiation detector-amplifier system

Energy Technology Data Exchange (ETDEWEB)

Cho, Gyuseong.

1992-03-01

Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was {approximately}400 MHz and the noise charge {approximately}1000 electrons at a 1 {mu}sec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of {approximately}0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB.

Radiation detectors based by polymer materials

International Nuclear Information System (INIS)

Cherestes, Margareta; Cherestes, Codrut; Constantinescu, Livia

2004-01-01

Scintillation counters make use of the property of certain chemical compounds to emit short light pulses after excitation produced by the passage of charged particles or photons of high energy. These flashes of light are detected by a photomultiplier tube that converts the photons into a voltage pulse. The light emitted from the detector also can be collected, focussed and dispersed by a CCD detector. The study of the evolution of the light emission and of the radiation damage under irradiation is a primary topic in the development of radiation hard polymer based scintillator. Polymer scintillator thin films are used in monitoring radiation beam intensities and simultaneous counting of different radiations. Radiation detectors have characteristics which depend on: the type of radiation, the energy of radiation, and the material of the detector. Three types of polymer thin films were studied: a polyvinyltoluene based scintillator, fluorinated polyimide and PMMA. (authors)

Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

Science.gov (United States)

Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

2014-12-01

Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Diamond radiation detectors II. CVD diamond development for radiation detectors

International Nuclear Information System (INIS)

Kania, D.R.

1997-01-01

Interest in radiation detectors has supplied some of the impetus for improving the electronic properties of CVD diamond. In the present discussion, we will restrict our attention to polycrystalhne CVD material. We will focus on the evolution of these materials over the past decade and the correlation of detector performance with other properties of the material

Radiation energy detector and analyzer

International Nuclear Information System (INIS)

Roberts, T.G.

1981-01-01

A radiation detector array and a method for measuring the spectral content of radiation. The radiation sensor or detector is an array or stack of thin solid-electrolyte batteries. The batteries, arranged in a stack, may be composed of independent battery cells or may be arranged so that adjacent cells share a common terminal surface. This common surface is possible since the polarity of the batteries with respect to an adjacent battery is unrestricted, allowing a reduction in component parts of the assembly and reducing the overall stack length. Additionally, a test jig or chamber for allowing rapid measurement of the voltage across each battery is disclosed. A multichannel recorder and display may be used to indicate the voltage gradient change across the cells, or a small computer may be used for rapidly converting these voltage readings to a graph of radiation intensity versus wavelength or energy. The behavior of the batteries when used as a radiation detector and analyzer are such that the voltage measurements can be made at leisure after the detector array has been exposed to the radiation, and it is not necessary to make rapid measurements as is now done

Radiation damage in silicon detectors

CERN Document Server

Lindström, G

2003-01-01

Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

Process effects on leakage current of Si-PIN neutron detectors with porous microstructure

Energy Technology Data Exchange (ETDEWEB)

Yu, Baoning; Zhao, Kangkang; Yang, Taotao [Beijing University of Technology, Chaoyang District, Pingleyuan 100, 100124 Beijing (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Jiang, Yong; Fan, Xiaoqiang [Institute of Nuclear Physics and Chemistry, CAEP, Mianshan Road 64, 621900 Mianyang (China); Lu, Min [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Han, Jun [Beijing University of Technology, Chaoyang District, Pingleyuan 100, 100124 Beijing (China)

2017-06-15

Using the technique of Microfabrication, such as deep silicon dry etching, lithography, etc. Si-PIN neutron detectors with porous microstructure have been successfully fabricated. In order to lower the leakage current, the key fabrication processes, including the Al windows opening, deep silicon etching and the porous side wall smoothing, have been optimized. The cross-section morphology and current-voltage characteristics have been measured to evaluate the microfabrication processes. With the optimized conditions presented by the measurements, a neutron detector with a leakage current density of 2.67 μA cm{sup -2} at a bias of -20 V is obtained. A preliminary neutron irradiation test with {sup 252}Cf neutron source has also been carried out. The neutron irradiation test shows that the neutron detection efficiency of the microstructured neutron detectors is almost 3.6 times higher than that of the planar ones. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Spectroscopic amplifier for pin diode; Amplificador espectroscopico para diodo Pin

Energy Technology Data Exchange (ETDEWEB)

Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R., E-mail: bebe.luna_s@hotmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

2014-10-15

The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

Ionizing radiation detector using multimode optical fibers

International Nuclear Information System (INIS)

Suter, J.J.; Poret, J.C.; Rosen, M.; Rifkind, J.M.

1993-01-01

An optical ionizing radiation detector, based on the attenuation of 850-nm light in 50/125-μm multimode fibers, is described. The detector is especially well suited for application on spacecraft because of its small design. The detection element consists of a section of coiled fibers that has been designed to strip higher-order optical modes. Cylindrical radiation shields with atomic numbers ranging from Z = 13 (aluminum too) Z = 82 (lead) were placed around the ionizing radiation detector so that the effectiveness of the detector could be measured. By exposing the shields and the detector to 1.25-MeV cobalt 60 radiation, the mass attenuation coefficients of the shields were measured. The detector is based on the phenomenon that radiation creates optical color centers in glass fibers. Electron spin resonance spectroscopy performed on the 50/125-μm fibers showed the presence of germanium oxide and phosphorus-based color centers. The intensity of these centers is directly related to the accumulated gamma radiation

Amorphous silicon radiation detectors

Science.gov (United States)

Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

1992-01-01

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Property of the diamond radiation detector

International Nuclear Information System (INIS)

Sochor, V.; Cechak, T.; Sopko, B.

2008-01-01

The outstanding properties of diamond, such as radiation hardness, high carrier mobility, high band gap and breakdown field, distinguish it as a good candidate for radiation detectors. In the dosimetry for radiotherapy is permanently searched the detector with high sensitivity, high stability, linear dependence of the response, small size, tissue equivalent material and fast response, for the measuring of the temporal and space variations of the dose. The diamond detector properties as high sensitivity, good spatial and temporal resolution, low Leakage currents, low capacitance, possibility to fabricate robust and compact device and high temperature operation make it possible to use these detectors in many fields from high energy physics till radiation monitoring, from Medical therapy dosimetry till synchrotron radiation measurement. (authors)

Fabrication of detectors and transistors on high-resistivity silicon

International Nuclear Information System (INIS)

Holland, S.

1988-06-01

A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 kΩ/centerreverse arrowdot/cm silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

Signal processing for radiation detectors

CERN Document Server

Nakhostin, Mohammad

2018-01-01

This book provides a clear understanding of the principles of signal processing of radiation detectors. It puts great emphasis on the characteristics of pulses from various types of detectors and offers a full overview on the basic concepts required to understand detector signal processing systems and pulse processing techniques. Signal Processing for Radiation Detectors covers all of the important aspects of signal processing, including energy spectroscopy, timing measurements, position-sensing, pulse-shape discrimination, and radiation intensity measurement. The book encompasses a wide range of applications so that readers from different disciplines can benefit from all of the information. In addition, this resource: * Describes both analog and digital techniques of signal processing * Presents a complete compilation of digital pulse processing algorithms * Extrapolates content from more than 700 references covering classic papers as well as those of today * Demonstrates concepts with more than 340 origin...

The Use of Radiation Detectors in Medicine: Radiation Detectors for Morphological Imaging (1/3)

CERN Multimedia

CERN. Geneva

2009-01-01

The development of radiation detectors in the field of nuclear and particle physics has had a terrific impact in medical imaging since this latter discipline took off in late ’70 with the invention of the CT scanners. The massive use in High Energy Physics of position sensitive gas detectors, of high Z and high density scintillators coupled to Photomultiplier (PMT) and Position Sensitive Photomultipliers (PSPMT), and of solid state detectors has triggered during the last 30 years a series of novel applications in Medical Imaging with ionizing radiation. The accelerated scientific progression in genetics and molecular biology has finally generated what it is now called Molecular Imaging. This field of research presents additional challenges not only in the technology of radiation detector, but more and more in the ASIC electronics, fast digital readout and parallel software. In this series of three lectures I will try to present how high energy physics and medical imaging development have both benefited by t...

The Use of Radiation Detectors in Medicine: Radiation Detectors for Functional Imaging (2/3)

CERN Multimedia

CERN. Geneva

2009-01-01

The development of radiation detectors in the field of nuclear and particle physics has had a terrific impact in medical imaging since this latter discipline took off in late ’70 with the invention of the CT scanners. The massive use in High Energy Physics of position sensitive gas detectors, of high Z and high density scintillators coupled to Photomultiplier (PMT) and Position Sensitive Photomultipliers (PSPMT), and of solid state detectors has triggered during the last 30 years a series of novel applications in Medical Imaging with ionizing radiation. The accelerated scientific progression in genetics and molecular biology has finally generated what it is now called Molecular Imaging. This field of research presents additional challenges not only in the technology of radiation detector, but more and more in the ASIC electronics, fast digital readout and parallel software. In this series of three lectures I will try to present how high energy physics and medical imaging development have both benefited by t...

Semiconductor radiation detectors technology and applications

CERN Document Server

2018-01-01

The aim of this book is to educate the reader on radiation detectors, from sensor to read-out electronics to application. Relatively new detector materials, such as CdZTe and Cr compensated GaAs, are introduced, along with emerging applications of radiation detectors. This X-ray technology has practical applications in medical, industrial, and security applications. It identifies materials based on their molecular composition, not densities as the traditional transmission equipment does. With chapters written by an international selection of authors from both academia and industry, the book covers a wide range of topics on radiation detectors, which will satisfy the needs of both beginners and experts in the field.

Semiconductor radiation detector

Science.gov (United States)

Bell, Zane W.; Burger, Arnold

2010-03-30

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Semiconductor radiation detectors. Device physics

International Nuclear Information System (INIS)

Lutz, G.

2007-01-01

Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

High energy x-ray radiography and computed tomography of bridge pins

International Nuclear Information System (INIS)

Green, R E; Logan, C M; Martz, H E; Updike, E; Waters, A M

1999-01-01

Bridge pins were used in the hanger assemblies for some multi-span steel bridges built prior to the 1980's, and are sometimes considered fracture critical elements of a bridge. During a test on a bridge conducted by the Federal Highway Administration (FHWA), ultrasonic field inspection results indicated that at least two pins contained cracks. Several pins were removed and selected for further examination. This provided an excellent opportunity to learn more about these pins and the application of x-ray systems at Lawrence Livermore National Laboratory (LLNL), as well as to learn more about the application of different detectors recently obtained by LLNL. Digital radiographs and computed tomography (CT) were used to characterize the bridge pins, using a LINAC x-ray source with a 9-MV bremsstrahlung spectrum. We will describe the performance of two different digital radiographic detectors. One is a detector system frequently used at LLNL consisting of a scintillator glass optically coupled to a CCD camera. The other detector is a new amorphous silicon detector recently acquired by LLNL

Detector for atomic particles and ionizing radiations

International Nuclear Information System (INIS)

Mallet, Georges; Ythier, Christian.

1976-01-01

The aim of this invention is to provide improved detectors of atomic particles and of ionising radiations, having maximum sensitivity, by virtually suppressing all absorption of the radiation scattered by the main detector, so that these detectors are particularly suitable for fitting to anti-Compton spectrometers. Reference is particularly made to detectors of the Ge(Li) type, lithium compensated germanium, which are the most used. It is however made clear that this choice is not restrictive and that this invention not only applies to all known types of detectors and particularly to scintillator detectors, for instance to detectors such as NaI (Tl), composed of a monocrystal of a thallium activated alkaline halogenide, but also to gas, ionisation chamber and luminescent chamber type detectors and in general to all the known devices that convert the energy of particles into electric signals. Owing to the fact that the walls of the enclosure containing the main detector are composed, in the part around this detector, of an auxiliary detector, the latter detects virtually all the radiations scattered by the main detector. It does so without any loss due to the absorption of these radiations (a) by the metal walls of the enclosure usually containing the main detector and (b) by the walls of the auxiliary detector casing. It results from this that the detectors of the invention enable coincidence or anti-coincidence spectrometers with a very high performance to be made [fr

Silicon P.I.N. Junctions used for studies of radiation damage

International Nuclear Information System (INIS)

Lanore, J.

1964-06-01

Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [fr

Development of leak detector by radiation. 2

International Nuclear Information System (INIS)

Suzuki, Takashi; Okano, Yasuhiro; Chisaka, Haruo

1997-01-01

Leak detector by radiation has been developed by cooperative research between Water Authority and us. In his fiscal year, the most suitable arrangement of detector system was simulated by Monte Carlo method. The first, the experimental values were compared with the results of simulation. The second, calculation was carried out by changing the quality of reflective materials and distance between radiation source and detector. The simulation results were agreed with the experimental results. On the basis of the rate of presence of leak, the most suitable arrangement of detector system was obtained under the conditions that both radiation source and detector covered with graphite or iron of 5 cm thickness and separated each other 3 cm apart. However, by comparing FOM (figure of merit), the suitable arrangement was that radiation source and detector adjoined each other and covered by graphite or iron of 20 cm thickness. (S.Y.)

Compound Semiconductor Radiation Detectors

CERN Document Server

Owens, Alan

2012-01-01

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

Energy Technology Data Exchange (ETDEWEB)

Lauber, A; Rosencrantz, B

1964-10-15

A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described.

A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

International Nuclear Information System (INIS)

Lauber, A.; Rosencrantz, B.

1964-10-01

A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described

Seismic restraint means for radiation detector

International Nuclear Information System (INIS)

Underwood, R.H.; Todt, W.H.

1983-01-01

Seismic restraint means are provided for mounting an elongated, generally cylindrical nuclear radiation detector within a tubular thimble in a nuclear reactor monitor system. The restraint means permits longitudinal movement of the radiation detector into and out of the thimble. Each restraint means comprises a split clamp ring and a plurality of symmetrically spaced support arms pivotally mounted on the clamp ring. Each support arm has spring bias means and thimble contact means eg insulating rollers whereby the contact means engage the thimble with a constant predetermined force which minimizes seismic vibration action on the radiation detector. (author)

Particle identification via transition radiation and detectors

International Nuclear Information System (INIS)

Egorytchev, V.; Saveliev, V.; Aplin, S.J.

2000-01-01

Transition radiation detectors show great promise for the purposes of lepton identification in existing and future experiments in high-energy physics such as HERA-B, ATLAS, ALICE in high-luminosity environment. More high performance can be expected in low-luminosity conditions - neutrino experiments (NOMAD), and ideal condition for the use of transition radiation detectors in flying and space high-energy experiments (AMS). This paper discusses the practical theory of transition radiation, basic equation and algorithm suitable for detailed analysis of transition radiation and optimization of transition radiation detectors in the area of experimental high-energy physics. The results are based on detailed Monte Carlo simulation of transition radiation introduced in GEANT and experimental results

Particle identification via transition radiation and detectors

CERN Document Server

Egorytchev, V; Aplin, S J

2000-01-01

Transition radiation detectors show great promise for the purposes of lepton identification in existing and future experiments in high- energy physics such as HERA-B, ATLAS, ALICE in high-luminosity environment. More high performance can be expected in low-luminosity conditions-neutrino experiments (NOMAD), and the ideal condition for the use of transition radiation detectors in flying and space high- energy experiments (AMS). This paper discusses the practical theory of transition radiation, basic equation and algorithm suitable for detailed analysis of transition radiation and optimization of transition radiation detectors in the area of experimental high- energy physics. The results are based on detailed Monte Carlo simulation of transition radiation introduced in GEANT and experimental results. (12 refs).

Improvement of thick a-Si radiation detectors by field profile tailoring

International Nuclear Information System (INIS)

Drewery, J.S.; Cho, G.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

1992-04-01

Application of thick (∼50 μm) a-Si p-i-n diodes as a direct radiation detector for minimum ionizing particles is hampered by the need to apply large bias voltages in order fully to deplete the detecting intrinsic layer, which typically contains 5 - 10 x 10 14 ionizable dangling bonds per CM 3 . By insertion of thin p-type layers at intervals within the intrinsic layer, the required depletion voltage can be reduced by a factor of at least 1/(n+l) where n is the number of layers inserted. This principle is demonstrated for devices approximately 12μm in thickness. It is shown that electron losses within the p type layer can be kept to minimum by choice of a low doping concentration for the introduced players

Precision synchrotron radiation detectors

International Nuclear Information System (INIS)

Levi, M.; Rouse, F.; Butler, J.

1989-03-01

Precision detectors to measure synchrotron radiation beam positions have been designed and installed as part of beam energy spectrometers at the Stanford Linear Collider (SLC). The distance between pairs of synchrotron radiation beams is measured absolutely to better than 28 /mu/m on a pulse-to-pulse basis. This contributes less than 5 MeV to the error in the measurement of SLC beam energies (approximately 50 GeV). A system of high-resolution video cameras viewing precisely-aligned fiducial wire arrays overlaying phosphorescent screens has achieved this accuracy. Also, detectors of synchrotron radiation using the charge developed by the ejection of Compton-recoil electrons from an array of fine wires are being developed. 4 refs., 5 figs., 1 tab

Radiation detector. [100 A

Energy Technology Data Exchange (ETDEWEB)

Baker, P D; Hollands, D V

1975-12-04

A radiation detector is described in which the radiation is led to a sensor via a 100 A thick gold film filter, which reduces the infrared components of the irradiation to a greater extent than the ultra-violet component reaching the sensor.

Radiation detector arrangements and methods

International Nuclear Information System (INIS)

Jackson, J.

1989-01-01

The patent describes a radiation detector arrangement. It comprises at least one detector element in the form of a temperature-sensitive resistor whose electrical resistance changes in response to radiation incident on the detector element, the resistor having a high positive temperature coefficient of electrical resistance at a transition in its electrical conductance, circuit means for applying a voltage across the resistor during operation of the detector arrangement, and temperature-regulation means for regulating the temperature of the resistor so as to operate the resistor in the transition, characterised in that the temperature-regulation means comprises the resistor and the circuit means which passes sufficient current through the resistor by resistance heating to a position in the transition at which a further increase in its temperature in response to incident radiation reduces the resistance heating by reducing the current, thereby stabilizing the temperature of the resistor at the position. The positive temperature coefficient at the position being sufficiently high that the change in the resistance heating produced by a change in the temperature of the resistor at the position is larger than a change in power of the incident radiation required to produce that same change in temperature of the resistor in the absence of any change in resistance heating

Electromagnetic radiation detector

Science.gov (United States)

Benson, Jay L.; Hansen, Gordon J.

1976-01-01

An electromagnetic radiation detector including a collimating window, a cathode member having a photoelectric emissive material surface angularly disposed to said window whereby radiation is impinged thereon at acute angles, an anode, separated from the cathode member by an evacuated space, for collecting photoelectrons emitted from the emissive cathode surface, and a negatively biased, high transmissive grid disposed between the cathode member and anode.

Fabrication and characterization of a 32 x 32 array digital Si-PIN X-ray detector for a single photon counting image sensor

International Nuclear Information System (INIS)

Seo, Jungho; Kim, Jinyoung; Lim, Hyunwoo; Park, Jingoo; Lee, Songjun; Kim, Bonghoe; Jeon, Sungchae; Huh, Young

2010-01-01

A Si-PIN X-ray detector for digital x-ray imaging with single photon counting capability has been fabricated and characterized. It consists of an array of 32 x 32 pixels with an area of 80 x 80 μm 2 . An extrinsic gettering process was performed to reduce the leakage current by removing the impurities and defects from the X-ray detector's Si substrate. Multiple guard-rings (MGRs) and metal filed plates (MFPs) techniques were adopted to reduce the leakage current and to improve the breakdown performance. The simulation verified that the breakdown voltage was improved with the MGRs and that the leakage current was significantly reduced with the MFPs. The electrical properties, such as the leakage current and the breakdown voltage, of the Si-PIN X-ray detector were characterized. The extrinsic gettering process played a significant role in reducing the leakage current, and a leakage current lower than 60 pA could be achieved at 100 V dc .

Recent developments in radiation detectors and instruments

International Nuclear Information System (INIS)

Das, Debashis

2016-01-01

Radiation detector is the key component in precise and accurate measurement of the nuclear radiations. The detectors deployed for radiation measurements in broadly classified sectors of Energy, Security, Discovery Science and Health and Environments are in general specific to their applications. The nuclear reactors as well as the fuel processing including waste management in energy sector require wide range/variety of detectors and the instruments for safe and precise generation of power. The security sector has gained importance in radiation monitoring in the present security perspective and there are many challenges in development of detector technology. The Discovery Science or the mega science projects viz CERN, Fermilab, GANIL, INO, MACE telescope, ITER etc have continuously generated new demand on detector related technologies that have been also found to be useful in other applications. Similarly, the health and environment monitoring have been also evolving with new technologies and techniques to address the requirement's arising in projects of new nuclear programs

Radiation detectors for reactors

International Nuclear Information System (INIS)

Balagi, V.

2005-01-01

Detection and measurement of radiation plays a vital role in nuclear reactors from the point of view of control and safety, personnel protection and process control applications. Various types of radiation are measured over a wide range of intensity. Consequently a variety of detectors find use in nuclear reactors. Some of these devices have been developed in Electronics Division. They include gas-filled detectors such as 10 B-lined proportional counters and chambers, fission detectors and BF 3 counters are used for the measurement of neutron flux both for reactor control and safety, process control as well as health physics instrumentation. In-core neutron flux instrumentation employs the use detectors such as miniature fission detectors and self-powered detectors. In this development effort, several indigenous materials, technologies and innovations have been employed to suit the specific requirement of nuclear reactor applications. This has particular significance in view of the fact that several new types of reactors such as P-4, PWR and AHWR critical facilities, FBTR, PFBR as well as the refurbishment of old units like CIRUS are being developed. The development work has sought to overcome some difficulties associated with the non-availability of isotopically enriched neutron-sensing materials, achieving all-welded construction etc. The present paper describes some of these innovations and performance results. (author)

Self-powered radiation detectors

International Nuclear Information System (INIS)

Gillies, Wallace.

1980-01-01

This invention aims to create a self fed radiation detector comprising a long central emitter-conductor absorbing the neutrons, wrapped in an insulating material, and a thin collector-conductor placed coaxially around the emitter and the insulation, the emitter being constructed of several stranded cables in a given conducting material so that the detector is flexible enough [fr

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

Photodiodes utilization as ionizing radiation detectors

International Nuclear Information System (INIS)

Khoury, H.J.; Melo, F.A. de

1987-01-01

The response of photodiodes to α and γ radiation is studied, using for α spectrometry measures and for γ radiation dosimetry. Therefore, the response of BPY-12 photodiodes as α particle detector is first studied. The results show that the response is linear with the energy of incidence radiation, one resolution 25Kev for energy of 5,4 MeV from 241 Am. For dosimetric measures, the response of SHF-206 photodiodes, when exposed at γ radiation is studied, and the results show taht the response of this detector is linear with the dose ratio, proving its practicability in γ radiation dosimetry. (C.G.C.) [pt

Radiation detector system having heat pipe based cooling

Science.gov (United States)

Iwanczyk, Jan S.; Saveliev, Valeri D.; Barkan, Shaul

2006-10-31

A radiation detector system having a heat pipe based cooling. The radiation detector system includes a radiation detector thermally coupled to a thermo electric cooler (TEC). The TEC cools down the radiation detector, whereby heat is generated by the TEC. A heat removal device dissipates the heat generated by the TEC to surrounding environment. A heat pipe has a first end thermally coupled to the TEC to receive the heat generated by the TEC, and a second end thermally coupled to the heat removal device. The heat pipe transfers the heat generated by the TEC from the first end to the second end to be removed by the heat removal device.

CVD diamond detectors for ionizing radiation

Science.gov (United States)

Friedl, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-10-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2×4 cm2 have been grown and refined for better charge collection properties, which are measured with a β source or in a testbeam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5×10 15 cm-2 to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics.

Neutron spectrometry by diamond detector for nuclear radiation

International Nuclear Information System (INIS)

Kozlov, S.F.; Konorova, E.A.; Barinov, A.L.; Jarkov, V.P.

1975-01-01

Experiments on fast neutron spectrometry using the nuclear radiation diamond detector inside a horizontal channel of a water-cooled and water-moderated reactor are described. It is shown that the diamond detector enables neutron spectra to be measured within the energy range of 0.3 to 10 MeV against reactor gamma-radiation background and has radiation resistance higher than that of conventional semiconductor detectors. (U.S.)

Study of detectors in beta radiation fields

International Nuclear Information System (INIS)

Albuquerque, M. da P.P.; Xavier, M.; Caldas, L.V.E.

1987-01-01

Several commercial detectors used with gamma or X radiation are studied. Their sensibility and energetic dependence are analysed in exposures of beta radiation fields. A comparative evaluation with the reference detector (the extrapolation chamber) is presented. (M.A.C.) [pt

Development of innovative silicon radiation detectors

CERN Document Server

Balbuena, JuanPablo

Silicon radiation detectors fabricated at the IMB-CNM (CSIC) Clean Room facilities using the most innovative techniques in detector technology are presented in this thesis. TCAD simulation comprises an important part in this work as becomes an essential tool to achieve exhaustive performance information of modelled detectors prior their fabrication and subsequent electrical characterization. Radiation tolerance is also investigated in this work using TCAD simulations through the potential and electric field distributions, leakage current and capacitance characteristics and the response of the detectors to the pass of different particles for charge collection efficiencies. Silicon detectors investigated in this thesis were developed for specific projects but also for applications in experiments which can benefit from their improved characteristics, as described in Chapter 1. Double-sided double type columns 3D (3D-DDTC) detectors have been developed under the NEWATLASPIXEL project in the framework of the CERN ...

Radiation effects on light sources and detectors

International Nuclear Information System (INIS)

Barnes, C.E.

1985-01-01

The rapidly expanding field of optoelectronics includes a wide variety of both military and non-military applications in which the systems must meet radiation exposure requirements. Herein, we review the work on radiation effects on sources and detectors for such optoelectronic systems. For sources the principal problem is permanent damage-induced light output degradation, while for detectors it is ionizing radiation-induced photocurrents

Detectors for Particle Radiation

Science.gov (United States)

Kleinknecht, Konrad

1999-01-01

This textbook provides a clear, concise and comprehensive review of the physical principles behind the devices used to detect charged particles and gamma rays, and the construction and performance of these many different types of detectors. Detectors for high-energy particles and radiation are used in many areas of science, especially particle physics and nuclear physics experiments, nuclear medicine, cosmic ray measurements, space sciences and geological exploration. This second edition includes all the latest developments in detector technology, including several new chapters covering micro-strip gas chambers, silicion strip detectors and CCDs, scintillating fibers, shower detectors using noble liquid gases, and compensating calorimeters for hadronic showers. This well-illustrated textbook contains examples from the many areas in science in which these detectors are used. It provides both a coursebook for students in physics, and a useful introduction for researchers in other fields.

Monitoring radiation damage in the ATLAS pixel detector

CERN Document Server

Schorlemmer, André Lukas; Quadt, Arnulf; Große-Knetter, Jörn; Rembser, Christoph; Di Girolamo, Beniamino

2014-11-05

Radiation hardness is one of the most important features of the ATLAS pixel detector in order to ensure a good performance and a long lifetime. Monitoring of radiation damage is crucial in order to assess and predict the expected performance of the detector. Key values for the assessment of radiation damage in silicon, such as the depletion voltage and depletion depth in the sensors, are measured on a regular basis during operations. This thesis summarises the monitoring program that is conducted in order to assess the impact of radiation damage and compares it to model predictions. In addition, the physics performance of the ATLAS detector highly depends on the amount of disabled modules in the ATLAS pixel detector. A worrying amount of module failures was observed during run I. Thus it was decided to recover repairable modules during the long shutdown (LS1) by extracting the pixel detector. The impact of the module repairs and module failures on the detector performance is analysed in this thesis.

CVD diamond detectors for ionizing radiation

CERN Document Server

Friedl, M; Bauer, C; Berfermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

1999-01-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2*4 cm/sup 2/ have been grown and refined for better charge collection properties, which are measured with a beta source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5*10/sup 15/ cm/sup -2/ to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (16 refs).

CVD diamond detectors for ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Friedl, M. E-mail: markus.friedl@cern.ch; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

1999-10-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2x4 cm{sup 2} have been grown and refined for better charge collection properties, which are measured with a {beta} source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5x10{sup 15} cm{sup -2} to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (author)

Ruggedization of CdZnTe detectors and detector assemblies for radiation detection applications

Energy Technology Data Exchange (ETDEWEB)

Lu, P.H., E-mail: pinghe.lu@redlen.com; Gomolchuk, P.; Chen, H.; Beitz, D.; Grosser, A.W.

2015-06-01

This paper described improvements in the ruggedization of CdZnTe detectors and detector assemblies for use in radiation detection applications. Research included experimenting with various conductive and underfill adhesive material systems suitable for CZT substrates. A detector design with encapsulation patterning was developed to protect detector surfaces and to control spacing between CZT anode and PCB carrier. Robustness of bare detectors was evaluated through temperature cycling and metallization shear testing. Attachment processes using well-chosen adhesives and PCB carrier materials were optimized to improve reliability of detector assemblies, resulted in Improved Attachment Detector Assembly. These detector assemblies were subjected to aggressive temperature cycling, and varying levels of drop/shock and vibration, in accordance with modified JEDEC, ANSI and FedEx testing standards, to assess their ruggedness. Further enhanced detector assembly ruggedization methods were investigated involving adhesive conformal coating, potting and dam filling on detector assemblies, which resulted in the Enhanced Ruggedization Detector Assembly. Large numbers of CZT detectors and detector assemblies with 5 mm and 15 mm thick, over 200 in total, were tested. Their performance was evaluated by exposure to various radioactive sources using comprehensive predefined detector specifications and testing protocols. Detector assemblies from improved attachment and enhanced ruggedization showed stable performances during the harsh environmental condition tests. In conclusion, significant progress has been made in improving the reliability and enhancing the ruggedness of CZT detector assemblies for radiation detection applications deployed in operational environments. - Highlights: • We developed ruggedization methods to enhance reliability of CZT detector assemblies. • Attachment of CZT radiation detectors was improved through comparative studies. • Bare detector metallization

Spectroscopic amplifier for pin diode

International Nuclear Information System (INIS)

Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

2014-10-01

The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

Effects of ionizing radiation on cryogenic infrared detectors

Science.gov (United States)

Moseley, S. H.; Silverberg, R. F.; Lakew, B.

1989-01-01

The Diffuse Infrared Background Experiment (DIRBE) is one of three experiments to be carried aboard the Cosmic Background Explorer (COBE) satellite scheduled to be launched by NASA on a Delta rocket in 1989. The DIRBE is a cryogenic absolute photometer operating in a liquid helium dewar at 1.5 K. Photometric stability is a principal requirement for achieving the scientific objectives of this experiment. The Infrared Astronomy Satellite (IRAS), launched in 1983, which used detectors similar to those in DIRBE, revealed substantial changes in detector responsivity following exposure to ionizing radiation encountered on passage through the South Atlantic Anomaly (SAA). Since the COBE will use the same 900 Km sun-synchronous orbit as IRAS, ionizing radiation-induced performance changes in the detectors were a major concern. Here, ionizing radiation tests carried out on all the DIRBE photodetectors are reported. Responsivity changes following exposure to gamma rays, protons, and alpha particle are discussed. The detector performance was monitored following a simulated entire mission life dose. In addition, the response of the detectors to individual particle interactions was measured. The InSb photovoltaic detectors and the Blocked Impurity Band (BIB) detectors revealed no significant change in responsivity following radiation exposure. The Ge:Ga detectors show large effects which were greatly reduced by proper thermal annealing.

Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

Energy Technology Data Exchange (ETDEWEB)

Wuestling, Sascha, E-mail: sascha.wuestling@kit.ed [Forschungszentrum Karlsruhe, Institut fuer Prozessdatenverarbeitung und Elektronik, Postfach 3640, 76021 Karlsruhe (Germany); Fraenkle, F.; Habermehl, F.; Renschler, P. [Universitaet Karlsruhe - TH, Institut fuer Experimentelle Kernphysik, Postfach 6980, 76128 Karlsruhe (Germany); Steidl, M [Forschungszentrum Karlsruhe, Institut fuer Kernphysik, Postfach 3640, 76021 Karlsruhe (Germany)

2010-12-11

The KATRIN neutrino mass experiment is based on a precise energy measurement ({Delta}E/E=5x10{sup -5}) of electrons emerging from tritium beta decay (E{sub max}=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area ({approx}80 cm{sup 2}), a certain energy resolution ({Delta}E=600 eV - 18.6 keV) but also a certain spatial resolution ({approx}3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm{sup 2}) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. , this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement . The detector allows for background searches with a sensitivity as low as 1.3x10{sup -3} cps/cm{sup 2} in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10{sup 5} and the search for ultra low Penning discharge emissions.

Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

Science.gov (United States)

Wuestling, Sascha; Fraenkle, F.; Habermehl, F.; Renschler, P.; Steidl, M.

2010-12-01

The KATRIN neutrino mass experiment is based on a precise energy measurement (Δ E/ E=5×10 -5) of electrons emerging from tritium beta decay ( Emax=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area (˜80 cm 2), a certain energy resolution (Δ E=600 eV @ 18.6 keV) but also a certain spatial resolution (˜3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm 2) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. [6], this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement [7]. The detector allows for background searches with a sensitivity as low as 1.3×10 -3 cps/cm 2 in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10 5 and the search for ultra low Penning discharge emissions.

General gamma-radiation test of TGC detectors

CERN Document Server

Smakhtin, V P

2004-01-01

The TGC detectors are expected to provide the Muon trigger for the ATLAS detector in the forward region of the ATLAS Muon Spectrometer. The TGC detectors have to provide a trigger signal within 25 ns of the LHC accelerator bunch spacing, with an efficiency exceeding 95%, while exposed to an effective)photon and neutron background ranging from 30 to 150 Hz/cm/sup 2/. In order to test TGC detectors in high rate environment every detector was irradiated at 2500 Cu Co-60 source in Radiation Facility of Weizmann Institute of Science at nominal operating voltage and at photon rate several times above the expected background. This radiation test was succeeded in diagnostics of the hot spots inside detectors. The present publication refers to the test results of 800 TGC detectors produced in the Weizmann Institute of Science. (1 refs).

Radiation damage studies for the DOe silicon detector

International Nuclear Information System (INIS)

Lehner, Frank

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Superconductive tunnel structures as radiation detectors

International Nuclear Information System (INIS)

Barone, A.; Gray, K.E.

1985-08-01

A brief review is given on various aspects of the potential of superconducting tunnel junctions as detectors for atomic and nuclear radiations. On the basis of recent results main advantages and drawbacks are indicated providing a preliminary comparison with the presently used semiconductor detectors. The basic ideas underlying the physics of the interaction of nuclear particles and other radiations with superconducting junctions are outlined. 9 refs., 1 tab

Method and circuit for stabilizing conversion gain of radiation detectors of a radiation detection system

International Nuclear Information System (INIS)

Stoub, E.W.

1986-01-01

A method is described for calibrating the gain of an array of radiation detectors of a radiation detection system comprising the steps of: (a) measuring in parallel for each radiation detector using a predetermined calibration point the energy map status, thereby obtaining an energy response vector whose elements correspond to the individual output of each radiation detector, each predetermined calibration point being a prescribed location corresponding to one of the radiation detectors; (b) multiplying that energy response vector with a predetermined deconvolution matrix, the deconvolution matrix being the inversion of a contribution matrix containing matrix elements C/sub IJ/, each such matrix element C/sub IJ/ of the contribution matrix representing the relative contribution level of a radiation detector j of the detection system for a point radiation source placed at a location i, thereby obtaining a gain vector product for the radiation detectors; (c) adjusting the gains of the radiation detectors with respect to the gain vector product such that a unity gain vector is essentially obtained; (d) measuring again the energy map status according to step (a); and (e) if the energy map status fails to essentially produce a unity gain vector repeat steps (a) to (d) until the energy map status substantially corresponds to unity

Radiation detectors as surveillance monitors

International Nuclear Information System (INIS)

Fehlau, P.E.; Dowdy, E.J.

1981-01-01

The International Atomic Energy Agency (IAEA) proposes to use personnel dosimetry radiation detectors as surveillance monitors for safeguards purposes. It plans to place these YES/NO monitors at barrier penetration points declared closed under IAEA safeguards to detect the passage of plutonium-bearing nuclear material, usually spent fuel. For this application, commercially available dosimeters were surveyed as well as other radiation detectors that appeared suitable and likely to be marketed in the near future. No primary advantage was found in a particular detector type because in this application backgrounds vary during long counting intervals. Secondary considerations specify that the monitor be inexpensive and easy to tamper-proof, interrogate, and maintain. On this basis radiophotoluminescent, thermoluminescent, and electronic dosimeters were selected as possible routine monitors; the latter two may prove useful for data-base acquisition

Gamma radiation detectors for safeguards applications

International Nuclear Information System (INIS)

Carchon, R.; Moeslinger, M.; Bourva, L.; Bass, C.; Zendel, M.

2007-01-01

The IAEA uses extensively a variety of gamma radiation detectors to verify nuclear material. These detectors are part of standardized spectrometry systems: germanium detectors for High-Resolution Gamma Spectrometry (HRGS); Cadmium Zinc Telluride (CZT) detectors for Room Temperature Gamma Spectrometry (RTGS); and NaI(Tl) detectors for Low Resolution Gamma Spectrometry (LRGS). HRGS with high-purity Germanium (HpGe) detectors cooled by liquid nitrogen is widely used in nuclear safeguards to verify the isotopic composition of plutonium or uranium in non-irradiated material. Alternative cooling systems have been evaluated and electrically cooled HpGe detectors show a potential added value, especially for unattended measurements. The spectrometric performance of CZT detectors, their robustness and simplicity are key to the successful verification of irradiated materials. Further development, such as limiting the charge trapping effects in CZT to provide improved sensitivity and energy resolution are discussed. NaI(Tl) detectors have many applications-specifically in hand-held radioisotope identification devices (RID) which are used to detect the presence of radioactive material where a lower resolution is sufficient, as they benefit from a generally higher sensitivity. The Agency is also continuously involved in the review and evaluation of new and emerging technologies in the field of radiation detection such as: Peltier-cooled CdTe detectors; semiconductor detectors operating at room temperature such as HgI 2 and GaAs; and, scintillator detectors using glass fibres or LaBr 3 . A final conclusion, proposing recommendations for future action, is made

Self-powered radiation detector

International Nuclear Information System (INIS)

Goldstein, N.P.; Todt, W.H.

1979-01-01

Self-powered gamma radiation detector composed of a conducting emitter surrounded by an insulating medium and a conducting tubular collector, the emitter being a hollow tube containing an electrical insulator [fr

Radiation effects in the Si-PIN detector on the Near Earth Asteroid Rendezvous mission

CERN Document Server

Starr, R; Evans, L G; Floyd, S R; McClanahan, T P; Trombka, J I; Goldsten, J O; Maurer, R H; McNutt, R L; Roth, D R

1999-01-01

A Si-PIN photodiode is being used as a solar X-ray monitor on the X-ray/gamma-ray spectrometer experiment which is flying on the Near Earth Asteroid Rendezvous spacecraft. Since its launch in February 1996 this photodiode has experienced several brief failures. These anomalies and other performance characteristics will be described. Efforts to reproduce these failures in ground tests with flight spare equipment will also be discussed.

Differential Detector for Measuring Radiation Fields

International Nuclear Information System (INIS)

Broide, A.; Marcus, E.; Brandys, I.; Schwartz, A.; Wengrowicz, U.; Levinson, S.; Seif, R.; Sattinger, D.; Kadmon, Y.; Tal, N.

2004-01-01

In case of a nuclear accident, it is essential to determine the source of radioactive contamination in order to analyze the risk to the environment and to the population. The radiation source may be a radioactive plume on the air or an area on the ground contaminated with radionuclides. Most commercial radiation detectors measure only the radiation field intensity but are unable to differentiate between the radiation sources. Consequently, this limitation causes a real problem in analyzing the potential risk to the near-by environment, since there is no data concerning the contamination ratios in the air and on the ground and this prevents us from taking the required steps to deal with the radiation event. This work presents a GM-tube-based Differential Detector, which enables to determine the source of contamination

Radiation damage resistance in mercuric iodide X-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Patt, B E; Dolin, R C; Devore, T M; Markakis, J M [EG and G Energy Measurements, Inc., Goleta, CA (USA); Iwanczyk, J S; Dorri, N [Xsirius, Inc., Marina del Rey, CA (USA); Trombka, J [National Aeronautics and Space Administration, Greenbelt, MD (USA). Goddard Space Flight Center

1990-12-20

Mercuric iodide (HgI{sub 2}) radiation detectors show great potential as ambient-temperature solid-state detectors for X-rays, gamma rays and visible light, with parameters that are competitive with existing technologies. In a previous experiment, HgI{sub 2} detectors irradiated with 10 MeV protons/cm{sup 2} exhibited no damage. The 10 MeV protons represent only the low range of the spectrum of energies that are important. An experiment has been conducted at the Saturne accelerator facility at Saclay, France, to determine the susceptibility of these detectors to radiation damage by high-energy (1.5 GeV) protons. The detectors were irradiated to a fluence of 10{sup 8} protons/cm{sup 2}. This fluence is equivalent to the cosmic radiation expected in a one-year period in space. The resolution of the detectors was measured as a function of the integral dose. No degradation in the response of any of the detectors or spectrometers was seen. It is clear from this data that HgI{sub 2} has extremely high radiation-damage resistance, exceeding that of most other semiconductor materials used for radiation detectors. Based on the results shown to date, HgI{sub 2} detectors are suitable for applications in which they may be exposed to high integral dose levels. (orig.).

Degradation of silicon AC-coupled microstrip detectors induced by radiation

Science.gov (United States)

Bacchetta, N.; Bisello, D.; Canali, C.; Fuochi, P. G.; Gotra, Y.; Paccagnella, A.; Verzellesi, G.

1993-12-01

Results are presented showing the radiation response of AC-coupled FOXFET biased microstrip detectors and related test patterns to be used in the microvertex detector of the CDF experiment at Fermi National Laboratory. Radiation tolerance of detectors to gamma and proton irradiation has been tested, and the radiation-induced variations of the DC electrical parameters have been analyzed. The long-term postirradiation behavior of detector characteristics has been studied, and the relevant room-temperature annealing phenomena have been examined. The main radiation damage effects after gamma or proton irradiation of FOXFET biased microstrip detectors consist of an increase in the total leakage current, while both the detector dynamic resistance and FOXFET switching voltage decrease.

Hybrid anode for semiconductor radiation detectors

Science.gov (United States)

Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

2013-11-19

The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Radiation-hardened optoelectronic components: detectors

International Nuclear Information System (INIS)

Wiczer, J.J.

1986-01-01

In this talk, we will survey recent research in the area of radiation hardened optical detectors. We have studied conventional silicon photodiode structures, special radiation hardened silicon photodiodes, and special double heterojunction AlGaAs/GaAs photodiodes in neutron, gamma, pulsed x-ray and charged particle environments. We will present results of our work and summarize other research in this area. Our studies have shown that detectors can be made to function acceptably after exposures to neutron fluences of 10 15 n/cm 2 , total dose gamma exposures of 10 8 rad (Si), and flash x-ray environments of 10 8 rad/sec (Si). We will describe detector structures that can operate through these conditions, pre-rad and post-rad operational characteristics, and experimental conditions that produced these results. 23 refs., 10 figs., 1 tab

Circuitry for use with an ionizing-radiation detector

International Nuclear Information System (INIS)

Marshall, J.H. III; Harrington, T.M.

1976-01-01

An improved system of circuitry for use in combination with an ionizing-radiation detector over a wide range of radiation levels includes a current-to-frequency converter together with a digital data processor for respectively producing and measuring a pulse repetition frequency which is proportional to the output current of the ionizing-radiation detector, a dc-to-dc converter for providing closely regulated operating voltages from a rechargeable battery and a bias supply for providing high voltage to the ionization chamber. The ionizing-radiation detector operating as a part of this system produces a signal responsive to the level of ionizing radiation in the vicinity of the detector, and this signal is converted into a pulse frequency which will vary in direct proportion to such level of ionizing-radiation. The data processor, by counting the number of pulses from the converter over a selected integration interval, provides a digital indication of radiation dose rate, and by accumulating the total of all such pulses provides a digital indication of total integrated dose. Ordinary frequency-to-voltage conversion devices or digital display techniques can be used as a means for providing audible and visible indications of dose and dose-rate levels

Nuclear radiation-warning detector that measures impedance

Science.gov (United States)

Savignac, Noel Felix; Gomez, Leo S; Yelton, William Graham; Robinson, Alex; Limmer, Steven

2013-06-04

This invention is a nuclear radiation-warning detector that measures impedance of silver-silver halide on an interdigitated electrode to detect light or radiation comprised of alpha particles, beta particles, gamma rays, X rays, and/or neutrons. The detector is comprised of an interdigitated electrode covered by a layer of silver halide. After exposure to alpha particles, beta particles, X rays, gamma rays, neutron radiation, or light, the silver halide is reduced to silver in the presence of a reducing solution. The change from the high electrical resistance (impedance) of silver halide to the low resistance of silver provides the radiation warning that detected radiation levels exceed a predetermined radiation dose threshold.

ALICE Transition Radiation Detector (TRD), test beam.

CERN Multimedia

2003-01-01

Electrons and positrons can be discriminated from other charged particles using the emission of transition radiation - X-rays emitted when the particles cross many layers of thin materials. To develop such a Transition Radiation Detector(TRD) for ALICE many detector prototypes were tested in mixed beams of pions and electrons, as in the example shown here.

Flame detector operable in presence of proton radiation

Science.gov (United States)

Walker, D. J.; Turnage, J. E.; Linford, R. M. F.; Cornish, S. D. (Inventor)

1974-01-01

A detector of ultraviolet radiation for operation in a space vehicle which orbits through high intensity radiation areas is described. Two identical ultraviolet sensor tubes are mounted within a shield which limits to acceptable levels the amount of proton radiation reaching the sensor tubes. The shield has an opening which permits ultraviolet radiation to reach one of the sensing tubes. The shield keeps ultraviolet radiation from reaching the other sensor tube, designated the reference tube. The circuitry of the detector subtracts the output of the reference tube from the output of the sensing tube, and any portion of the output of the sensing tube which is due to proton radiation is offset by the output of the reference tube. A delay circuit in the detector prevents false alarms by keeping statistical variations in the proton radiation sensed by the two sensor tubes from developing an output signal.

Radiation effects in IRAS extrinsic infrared detectors

Science.gov (United States)

Varnell, L.; Langford, D. E.

1982-01-01

During the calibration and testing of the Infrared Astronomy Satellite (IRAS) focal plane, it was observed that the extrinsic photoconductor detectors were affected by gamma radiation at dose levels of the order of one rad. Since the flight environment will subject the focal plane to dose levels of this order from protons in single pass through the South Atlantic Anomaly, an extensive program of radiation tests was carried out to measure the radiation effects and to devise a method to counteract these effects. The effects observed after irradiation are increased responsivity, noise, and rate of spiking of the detectors after gamma-ray doses of less than 0.1 rad. The detectors can be returned almost to pre-irradiation performance by increasing the detector bias to breakdown and allowing a large current to flow for several minutes. No adverse effects on the detectors have been observed from this bias boost, and this technique will be used for IRAS with frequent calibration to ensure the accuracy of observations made with the instrument.

Low power frontend ASIC (Anusuchak) for dosimeter using Si-PIN detector

International Nuclear Information System (INIS)

Darad, A.; Chandratre, V.B.

2010-01-01

A low power ASIC (Anusuchak) for silicon PIN detector signal processing channel designed for pocket dosimeter in 0.35 μm CMOS process. The ASIC contains two channels one for Beta particle and other for Gamma ray. The channel is a CSA integrated with a shaper, gain stage and comparator with total power consumption of 4.6 mW. The ASIC has gain of 12 mV/fC and can be raised to 29 mV/fC without degrading the noise, power or linearity specification of the channel. The channel has a peaking time of 1.2 μs with baseline recovery within 5.3 μs and noise figure of 420 e- at 0 pF. The noise slope is 17 e-/pF. The ASIC is designed for single supply of 3.3 V for which battery is available. (author)

Temperature effects on radiation damage in plastic detectors

International Nuclear Information System (INIS)

Mendoza A, D.

1996-01-01

The objective of present work was to study the temperature effect on radiation damage registration in the structure of a Solid State Nuclear Track Detector of the type CR-39. In order to study the radiation damage as a function of irradiation temperature, sheets of CR-39 detectors were irradiated with electron beams, simulating the interaction of positive ions. CR-39 detectors were maintained at a constant temperature from room temperature up to 373 K during irradiation. Two techniques were used from analyzing changes in the detector structure: Electronic Paramagnetic Resonance (EPR) and Infrared Spectroscopy (IR). It was found by EPR analysis that the amount of free radicals decrease as irradiation temperature increases. The IR spectrums show yield of new functional group identified as an hydroxyl group (OH). A proposed model of interaction of radiation with CR-39 detectors is discussed. (Author)

Radiation hard cryogenic silicon detectors

International Nuclear Information System (INIS)

Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

2002-01-01

It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

Synchrotron radiation and multichannel detectors in structural analysis

Energy Technology Data Exchange (ETDEWEB)

Mokulskii, M

1979-10-01

A survey is presented of the development of multichannel synchrotron X radiation detectors for the structural analysis of crystals. Tests are currently under way of a 4-thousand-channel plane detector of soft X radiation. The detector consists of a multiwire proportional counter using argon and CO/sub 2/ as the working gases. The detector is coupled to a computer processing information and displaying the respective X-ray diffraction images on the monitor. The described equipment allows imaging, eg., the cross section of the elementary cell of a DNA crystal. A 16-thousand-channel detector exists in the present time and the building is envisaged of a detector with 65 thousand channels.

Synchrotron radiation and multichannel detectors in structural analysis

International Nuclear Information System (INIS)

Mokulskij, M.

1979-01-01

A survey is presented of the development of multichannel synchrotron X radiation detectors for the structural analysis of crystals. Tests are currently under way of a 4-thousand-channel plane detector of soft X radiation. The detector consists of a multiwire proportional counter using argon and CO 2 as the working gases. The detector is coupled to a computer processing information and displaying the respective X-ray diffraction images on the monitor. The described equipment allows imaging, eg., the cross section of the elementary cell of a DNA crystal. A 16-thousand-channel detector exists in the present time and the building is envisaged of a detector with 65 thousand channels. (J.B.)

Detectors for particle radiation. 2. rev. ed.

International Nuclear Information System (INIS)

Kleinknecht, K.

1987-01-01

This book is a description of the set-up and mode of action of detectors for charged particles and gamma radiation for students of physics, as well as for experimental physicists and engineers in research and industry: Ionization chamber, proportional counter, semiconductor counter; proportional chamber, drift chamber, bubble chamber, spark chamber, photomultiplier, laser ionization, silicion strip detector; Cherenkov counter, transition radiation detector; electron-photon-cascade counter, hadron calorimeter; magnetic spectrometer; applications in nuclear medicine, geophysics, space travel, atom physics, nuclear physics, and high-energy physics. With 149 figs., 20 tabs [de

Method of neutralising the effects of electromagnetic radiation in a radiation detector and a radiation detector applying the procedure

International Nuclear Information System (INIS)

Gripentog, W.G.

1972-01-01

Circuitry is described by means of which radiation detectors of the Neher-White type, employing ionisation chambers can be unaffected by electromagnetic radiation which would otherwise cause inductive effects leading to erroneous signals. It is therefore unnecessary to use shielded cables for these instruments. (JIW)

Long-distance transmission of light in a scintillator-based radiation detector

Science.gov (United States)

Dowell, Jonathan L.; Talbott, Dale V.; Hehlen, Markus P.

2017-07-11

Scintillator-based radiation detectors capable of transmitting light indicating the presence of radiation for long distances are disclosed herein. A radiation detector can include a scintillator layer and a light-guide layer. The scintillator layer is configured to produce light upon receiving incident radiation. The light-guide layer is configured to receive light produced by the scintillator layer and either propagate the received light through the radiation detector or absorb the received light and emit light, through fluorescence, that is propagated through the radiation detector. A radiation detector can also include an outer layer partially surrounding the scintillator layer and light-guide layer. The index of refraction of the light-guide layer can be greater than the index of refraction of adjacent layers.

18th International Workshop on Radiation Imaging Detectors

CERN Document Server

2016-01-01

The International Workshops on Radiation Imaging Detectors are held yearly and provide an international forum for discussing current research and developments in the area of position sensitive detectors for radiation imaging, including semiconductor detectors, gas and scintillator-based detectors. Topics include processing and characterization of detector materials, hybridization and interconnect technologies, design of counting or integrating electronics, readout and data acquisition systems, and applications in various scientific and industrial fields. The workshop will have plenary sessions with invited and contributed papers presented orally and in poster sessions. The invited talks will be chosen to review recent advances in different areas covered in the workshop.

Experimental studies of radiation damage of silicon detectors

International Nuclear Information System (INIS)

Angelescu, T.; Ghete, V.M.; Ghiordanescu, N.; Lazanu, I.; Mihul, A.; Golutvin, I.; Lazanu, S.; Savin, I.; Vasilescu, A.; Biggeri, U.; Borchi, E.; Bruzzi, M.; Li, Z.; Kraner, H.W.

1994-02-01

New particle physics experiments are correlated with high luminosity and/or high energy. The new generation of colliding beam machines which will be constructed will make an extrapolation of a factor of 100 in the center of mass energy and of 1000 in luminosity beyond present accelerators. The scientific community hopes that very exciting physics results could be achieved this way, from the solution to the problem of electroweak symmetry breaking to the possible discovery of new, unpredicted phenomena. The particles which compose the radiation field are: electrons, pions, neutrons, protons and photons. It has become evident that the problem of the radiation resistance of detectors in this severe environment is a crucial one. This situation is complicated more by the fact that detectors must work all the run time of the machine, and better all the time of the experiment, without replacement (part or whole). So, studies related to the investigation of the radiation hardness of all detector parts, are developing. The studies are in part material and device characterization after irradiation, and in part technological developments, made in order to find harder, cheaper technologies, for larger surfaces. Semiconductor detectors have proven to be a good choice for vertex and calorimeter. Both fixed target machines and colliders had utilized in the past silicon junction detectors as the whole or part of the detection system. Precision beam hodoscopes and sophisticated trigger devices with silicon are equally used. The associated electronics in located near the detectors, and is subjected to the same radiation fields. Studies of material and device radiation hardness are developing in parallel. Here the authors present results on the radiation hardness of silicon, both as a bulk material and as detectors, to neutron irradiation at high fluences

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure.

Science.gov (United States)

Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

2017-12-23

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO₂ interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e - rms , low dark current density of 56 pA/cm² at -35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV.

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.

1992-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with the good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high-efficiency, room temperature gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, the authors have procured and tested a commercial device with operating characteristics similar to those of a single layer of the composite device. They have modeled the radiation transport in a multi-layered device, to verify the initial calculations of layer thickness and composition. They have modeled the electrostatic field in different device designs to locate and remove high-field regions that can cause device breakdown. They have fabricated 14 single layer prototypes

Radiation detector

Energy Technology Data Exchange (ETDEWEB)

Ohata, Shuichi; Takeuchi, Yoji

1968-10-30

Herein disclosed is an ionization chamber the airtightness of which can be readily tested. The ionization chamber is characterized in that a small amount of helium gas is filled in the chamber in combination with other ionization gases such as argon gas, xenon gas and the like. Helium leakage from the chamber is measured by a known helium gas sensor in a vacuum vessel. Hence the long term drift of the radiation detector sensitivity may be determined.

Analysis of changes in environmental radiation, and three types of environmental radiation detector performance comparisons

International Nuclear Information System (INIS)

Park, J.H; Seo, J.H; Park, S.M; Yu, B.N; Park, J.H; Joo, K.S

2013-06-01

High-pressure ion chamber (GE Reuter-Stokes, HPIC), accuracy is high but the high price and do not have the ability nuclide analysis is a disadvantage. NaI(Tl) and PMT scintillation detector of radioactive materials can be divided. Environmental radiation measurements using a semiconductor with SiPM detector PMT to replace the value of the results were compared. SiPM detector using radiation environment were measured in the field to verify the accuracy and energy resolution. SiPMs performance as environmental radiation measurement equipment and radioactive material distinction as a personal dosimeter based technology, using the above results were prepared. The interest on the environmental radiation due to the Fukushima power plant crisis in Japan has been growing concern about the radiation environment of the relatively close proximity Korea is a very heightened state. Could be confirmed in the radiation environment of nuclear power plants around the analysis and performance of the next generation of environmental radiation meter. Fukushima power plants accident after 2 years, the equipment installed by this analysis meets the performance as a radiation detector could be confirmed as follows. CANA Inc. developed by radionuclides classification of using man-made and natural radionuclides and man-made radionuclides separated, ensure the value of the results were analyzed. Could be and alternative to the conventional detector energy resolution ( 137 CS<15%) and linearity (<15%) to satisfy the performance requirements of the measurement result of environmental radiation detector is considered. SiPM radiation environment changes and HPIC and NaI(TI) scintillation detector installed in Korea of the Fukushima power plant after the accident, radiation environment using a small alternative was to verify the accuracy of the measuring equipment. A big difference in performance as invisible by comparison with the large detector Assay miniaturization rough as a personal

Silicon P.I.N. Junctions used for studies of radiation damage; Etude de l'irradiation aux neutrons rapides du silicium au moyen de jonctions P.I.N

Energy Technology Data Exchange (ETDEWEB)

Lanore, J [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

1964-06-01

Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [French] L'irradiation de structures P.I.N. etait faite dans le but d'etudier principalement la mise au point d'un dosimetre a ''radiation damage'' et aussi pour etudier plus profondement le silicium lui-meme. On sait que le taux de recombinaison electrons-trous est une fonction lineaire du taux de defauts introduits par irradiation aux neutrons. Deux methodes ont ete utilisees pour atteindre ce taux de recombinaison: mesures de la caracteristique directe, mesures du temps de retournement. Pour expliquer de quelle facon ces parametres dependent du taux de recombinaison. Nous avons donne une theorie de la jonction P.I.N. Nous avons aussi donne l'allure des variations du temps de vie des porteurs en fonction de la temperature. Nous avons d'autre part effectue des recuits entre 70 et 700 K, domaine dans lequel nous avons trouve cinq etapes de ''guerison'' avec les energies d'activation correspondantes. En application de ces etudes nous avons mis ou point un dosimetre a ''radiation damage'' avec lequel nous avons effectue des

Monolithic active pixel radiation detector with shielding techniques

Energy Technology Data Exchange (ETDEWEB)

Deptuch, Grzegorz W.

2018-03-20

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

Radiation damage studies for the D0 silicon detector

International Nuclear Information System (INIS)

Lehner, F.

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Successful beam tests for ALICE Transition Radiation Detector

CERN Multimedia

2002-01-01

Another round of beam tests of prototypes for the Transition Radiation Detector (TRD) for ALICE has been completed and there are already some good results. Mass production of the components of the detector will start early next year.   Top view of the setup for the Transition Radiation Detector prototype tests at CERN.On the left, can be seen the full-scale TRD prototype together with four smaller versions. These are busy days for the TRD (Transition Radiation Detector) team of ALICE. Twenty people - mainly from Germany, but also from Russia and Japan - were working hard during the beam tests this autumn at CERN to assess the performance of their detector prototypes. Analysis of the data shows that the TRD can achieve the desired physics goal even for the highest conceivable multiplicities in lead-lead collisions at the LHC. In its final configuration in the ALICE experiment, the TRD will greatly help in identifying high-momentum electrons, which are 'needles in a haystack' that consists mostly of...

Development of CVD diamond radiation detectors

CERN Document Server

Adam, W; Berdermann, E; Bogani, F; Borchi, E; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fisch, D; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E A; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Knöpfle, K T; Krammer, Manfred; Manfredi, P F; Meier, D; Mishina, M; Le Normand, F; Pan, L S; Pernegger, H; Pernicka, Manfred; Pirollo, S; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Turchetta, R; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zoeller, M M

1998-01-01

Diamond is a nearly ideal material for detecting ionizing radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow a diamond detector to be used in high ra diation, high temperature and in aggressive chemical media. We have constructed charged particle detectors using high quality CVD diamond. Characterization of the diamond samples and various detect ors are presented in terms of collection distance, $d=\\mu E \\tau$, the average distance electron-hole pairs move apart under the influence of an electric field, where $\\mu$ is the sum of carrier mo bilities, $E$ is the applied electric field, and $\\tau$ is the mobility weighted carrier lifetime. Over the last two years the collection distance increased from $\\sim$ 75 $\\mu$m to over 200 $\\mu$ m. With this high quality CVD diamond a series of micro-strip and pixel particle detectors have been constructed. These devices were tested to determine their position resolution and signal to n oise performance. Diamond detectors w...

Transition-radiation detectors for cosmic-ray research

International Nuclear Information System (INIS)

Mueller, D.; Chicago Univ., Ill.

1975-01-01

Transition-radiation detectors for cosmic-ray work are described which consist of plastic foam of multiple plastic foil radiators, followed by proportional chambers. A summary of the properties of such detectors is given, and the detection and discrimination efficiencies for energetic particles are discussed. Several possible applications of such devices for studies of cosmic-ray particles in the energy region γ=E/mc 2 >10 3 are advertised

PAMELA Space Mission: The Transition Radiation Detector

Science.gov (United States)

Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; De Marzo, C.; Giglietto, N.; Marangelli, B.; Mirizzi, N.; Romita, M.; Spinelli, P.

2003-07-01

PAMELA telescope is a satellite-b orne magnetic spectrometer built to fulfill the primary scientific objectives of detecting antiparticles (antiprotons and positrons) in the cosmic rays, and to measure spectra of particles in cosmic rays. The PAMELA telescope is currently under integration and is composed of: a silicon tracker housed in a permanent magnet, a time of flight and an anticoincidence system both made of plastic scintillators, a silicon imaging calorimeter, a neutron detector and a Transition Radiation Detector (TRD). The TRD detector is composed of 9 sensitive layers of straw tubes working in proportional mode for a total of 1024 channels. Each layer is interleaved with a radiator plane made of carbon fibers. The TRD detector characteristics will be described along with its performance studied exposing the detector to particle beams of electrons, pions, muons and protons of different momenta at both CERN-PS and CERN-SPS facilities.

X-Ray and Gamma-Ray Radiation Detector

DEFF Research Database (Denmark)

2015-01-01

Disclosed is a semiconductor radiation detector for detecting X-ray and / or gamma-ray radiation. The detector comprises a converter element for converting incident X-ray and gamma-ray photons into electron-hole pairs, at least one cathode, a plurality of detector electrodes arranged with a pitch...... (P) along a first axis, a plurality of drift electrodes, a readout circuitry being configured to read out signals from the plurality of detector electrodes and a processing unit connected to the readout circuitry and being configured to detect an event in the converter element. The readout circuitry...... is further configured to read out signals from the plurality of drift electrodes, and the processing unit is further configured to estimate a location of the event along the first axis by processing signals obtained from both the detector electrodes and the drift electrodes, the location of the event along...

Radiation field mapping using a mechanical-electronic detector

Energy Technology Data Exchange (ETDEWEB)

Czayka, M., E-mail: mczayka@kent.ed [College of Technology, Kent State University-Ashtabula 3300 Lake Road West, Ashtabula, OH 44004 (United States); Program on Electron Beam Technology, Kent State University, P.O. Box 1028, Middlefield, OH 44062 (United States); Fisch, M. [Program on Electron Beam Technology, Kent State University, P.O. Box 1028, Middlefield, OH 44062 (United States); College of Technology, Kent State University, P.O. Box 5190, Kent, OH 44242-0001 (United States)

2010-04-15

A method of radiation field mapping of a scanned electron beam using a Faraday-type detector and an electromechanical linear translator is presented. Utilizing this arrangement, fluence and fluence rate measurements can be made at different locations within the radiation field. The Faraday-type detector used in these experiments differs from most as it consists of a hollow stainless steel sphere. Results are presented in two- and three-dimensional views of the radiation field.

Radiation damage in barium fluoride detector materials

International Nuclear Information System (INIS)

Levey, P.W.; Kierstead, J.A.; Woody, C.L.

1988-01-01

To develop radiation hard detectors, particularly for high energy physics studies, radiation damage is being studied in BaF 2 , both undoped and doped with La, Ce, Nd, Eu, Gd and Tm. Some dopants reduce radiation damage. In La doped BaF 2 they reduce the unwanted long lifetime luminescence which interferes with the short-lived fluorescence used to detect particles. Radiation induced coloring is being studied with facilities for making optical measurements before, during and after irradiation with 60 C0 gamma rays. Doses of 10 6 rad, or less, create only ionization induced charge transfer effects since lattice atom displacement damage is negligible at these doses. All crystals studied exhibit color center formation, between approximately 200 and 800 nm, during irradiation and color center decay after irradiation. Thus only measurements made during irradiation show the total absorption present in a radiation field. Both undoped and La doped BaF 2 develop damage at minimum detectable levels in the UV---which is important for particle detectors. For particle detector applications these studies must be extended to high dose irradiations with particles energetic enough to cause lattice atom displacement damage. In principle, the reduction in damage provided by dopants could apply to other applications requiring radiation damage resistant materials

The measurement of phi 60 mm x 600 mu m silicon PIN detector gamma sensitivity and time respond

CERN Document Server

Hu Meng Chun; Ye Wen Ying

2002-01-01

phi 60 mm x 600 mu m silicon PIN detector is a large area and high sensitive one which has been developed in near years. The authors have measured their gamma sensitivity and the time response. The experiment and theoretical calculated results in: sup 6 sup 0 Co gamma sensitivity is about 5 fC centre dot cm sup 2 /MeV, the rise time is about 10 ns and the half-high-width time is about 35 ns

Multi-sensor radiation detector system

International Nuclear Information System (INIS)

Foster, R.G.; Cyboron, R.D.

1975-01-01

The invention is a multi-sensor radiation detection system including a self-powered detector and an ion or fission chamber, preferably joined as a unitary structure, for removable insertion into a nuclear reactor. The detector and chamber are connected electrically in parallel, requiring but two conductors extending out of the reactor to external electrical circuitry which includes a load impedance, a voltage source, and switch means. The switch means are employed to alternately connect the detector and chamber either with th load impedance or with the load impedance and the voltage source. In the former orientation, current through the load impedance indicates flux intensity at the self-powered detector and in the latter orientation, the current indicates flux intensity at the detector and fission chamber, though almost all of the current is contributed by the fission chamber. (auth)

The Effect of Material Homogenization in Calculating the Gamma-Ray dose from Spent PWR Fuel Pins in an Air Medium

International Nuclear Information System (INIS)

TH Trumbull

2005-01-01

The effect of material homogenization on the calculated dose rate was studied for several arrangements of typical PWR spent fuel pins in an air medium using the Monte Carlo code, MCNP. The models analyzed increased in geometric complexity, beginning with a single fuel pin, progressing to ''small'' lattices, i.e., 3x3, 5x5, 7x7 fuel pins, and culminating with a full 17x17 pin PWR bundle analysis. The fuel pin dimensions and compositions were taken directly from a previous study and efforts were made to parallel this study by specifying identical flux-to-dose functions and gamma-ray source spectra. The analysis shows two competing components to the overall effect of material homogenization on calculated dose rate. Homogenization of pin lattices tends to lower the effect of radiation ''channeling'' but increase the effect of ''source redistribution.'' Depending on the size of the lattice and location of the detectors, the net effect of material homogenization on dose rate can be insignificant or range from a 6% decrease to a 35% increase relative to the detailed geometry model

A monolithically integrated detector-preamplifier on high-resistivity silicon

International Nuclear Information System (INIS)

Holland, S.; Spieler, H.

1990-02-01

A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am 241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm 2 detector with on-chip amplifier in an experimental setup with substantial external pickup

Radiometric analyzer with plural radiation sources and detectors

International Nuclear Information System (INIS)

Arima, S.; Oda, M.; Miyashita, K.; Takada, M.

1977-01-01

A radiometric analyzer for measuring characteristics of a material by radiation comprises a plurality of systems in which each consists of a radiation source and a radiation detector which are the same in number as the number of elements of the molecule of the material and a linear calibration circuit having inverse response characteristics (calibration curve) of the respective systems of detectors, whereby the measurement is carried out by four fundamental rules by operation of the mutual outputs of said detector system obtained through said linear calibration circuit. One typical embodiment is a radiometric analyzer for hydrocarbons which measures the density of heavy oil, the sulfur content and the calorific value by three detector systems which include a γ-ray source (E/sub γ/ greater than 50 keV), a soft x-ray source (Ex approximately 20 keV), and a neutron ray source. 2 claims, 6 figures

Department of Radiation Detectors: Overview

International Nuclear Information System (INIS)

Piekoszewski, J.

1998-01-01

(full text) Work carried out in 1997 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification using Ion and Plasma Beams. Semiconductor detectors: Semiconductor detectors of ionizing radiation are among the basic tools utilized in such fields of research and industry as nuclear physics, high energy physics, medical (oncology) radiotherapy, radiological protection, environmental monitoring, energy dispersive X-ray fluorescence non-destructive analysis of chemical composition, nuclear power industry. The Department all objectives are: - search for new types of detectors, - adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, - producing unique detectors tailored for physics experiments, - manufacturing standard detectors for radiation measuring instruments, - scientific development of the staff. These 1997 objectives were accomplished particularly by: - research on unique detectors for nuclear physics (e.g. transmission type Si(Li) detectors with extremely thin entrance and exit window), - development of technology of high-resistivity (HRSi) silicon detectors and thermoelectric cooling systems (KBN grant), - study of the applicability of industrial planar technology in producing detectors, - manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. In accomplishing of the above, the Department cooperated with interested groups of physicists from our Institute (P-I and P-II Departments), Warsaw University, Warsaw Heavy Ion Laboratory and with some technology Institutes based in Warsaw (ITME, ITE). Some detectors and services have been delivered to customers on a commercial basis. X-Rat tube generators: The Department conducts research on design and technology of producing X-ray generators based on X-ray tubes of special construction. In 1997, work on a special

The design of intelligentized nuclear radiation monitoring detector

International Nuclear Information System (INIS)

Meng Yan; Fang Zongliang; Wen Qilin; Li Lirong; Hu Jiewei; Peng Jing

2010-01-01

This paper introduced an intelligentized nuclear radiation monitoring detector. The detector contains GM tubes, high voltage power supply and MCU circuit. The detector connect terminal via reformative serial port to provide power, accept the data and sent the command. (authors)

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.A.

1991-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high- efficiency gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, we have modeled parts of the detector and have nearly completed a prototype device. 2 refs

Recent results on the development of radiation-hard diamond detectors

CERN Document Server

Conway, J S; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Dabrowski, W; Da Graca, J; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jamieson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Plano, R; Polesello, P; Prawer, S; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Russ, J; Schnetzer, S; Sciortino, S; Somalwar, S V; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Thomson, G B; Trawick, M; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

1999-01-01

Charged particle detectors made from chemical vapor deposition (CVD) diamond have radiation hardness greatly exceeding that of silicon- based detectors. The CERN-based RD42 Collaboration has developed and tested CVD diamond microstrip and pixel detectors with an eye to their application in the intense radiation environment near the interaction region of hadron colliders. This paper presents recent results from tests of these detectors. (4 refs).

Radiation damage: special reference to gas filled radiation detectors

International Nuclear Information System (INIS)

Gaur, Sudha; Joshi, Pankaj Kumar; Rathore, Shakuntla

2012-01-01

Radiation damage is a term associated with ionizing radiation. In gas filled particle detectors, radiation damage to gases plays an important role in the device's ageing, especially in devices exposed to high intensity radiation, e.g. detector for the large hadrons collide. Ionization processes require energy above 10 eV, while splitting covalent bond in molecules and generating free radical require only 3-4 eV. The electrical discharges initiated by the ionization event by the particles result in plasma populated by large amount of free radical. The highly reactive free radical can recombine back to original molecules, or initiate a chain of free radical polymerization reaction with other molecules, yielding compounds with increasing molecular weight. These high molecular weight compounds then precipitate from gases phase, forming conductive or non-conductive deposits on the electrodes an insulating surfaces of the detector and distorting it's response. Gases containing hydrocarbon quenchers, e.g. argon-methane, are typically sensitive to ageing by polymerization; addition of oxygen tends to lower the ageing rates. Trace amount of silicon oils, present form out gassing of silicon elastomers and especially from traces of silicon lubricant tend to decompose and form deposits of silicon crystals on the surfaces. Gases mixture of argon (or xenon) with CO 2 and optimally also with 2-3 % of oxygen are highly tolerant to high radiation fluxes. The oxygen is added as noble gas with CO 2 has too high transparency for high energy photons; ozone formed from the oxygen is a strong absorber of ultra violet photons. Carbon tetra fluoride can be used as a component of the gas for high-rate detectors; the fluorine radical produced during the operation however limit the choice of materials for the chambers and electrodes (e.g. gold electrodes are required, as the fluorine radicals attack metals, forming fluorides). Addition of carbon tetra fluoride can however eliminate the

Detection of nuclear radiations; Detectores de radiaciones nucleares

Energy Technology Data Exchange (ETDEWEB)

Tanarro Sanz, A

1959-07-01

A summary of the lectures about the ordinary detectors of nuclear radiations given by the author in the Courses of Introduction to Nuclear Engineering held at the JEN up to the date of publication is given. Those lectures are considered to be a necessary introduction to Nuclear Instrumentation and Applied electronics to Nuclear Engineering so it has been intent to underline those characteristics of radiation detectors that must be taken in consideration in choosing or designing the electronic equipment associated to them in order to take advantage of each detector possibilities. (Author) 8 refs.

ALICE Transition Radiation Detector

CERN Multimedia

Pachmayer, Y

2013-01-01

The Transition Radiation Detector (TRD) is the main electron detector in ALICE. In conduction with the TPC and the ITS, it provides the necessary electron identification capability to study: - Production of light and heavy vector mesons as well as the continuum in the di-electron channel, - Semi leptonic decays of hadrons with open charm and open beauty via the single-electron channel using the displaced vertex information provided by the ITS, - Correlated DD and BB pairs via coincidences of electrons in the central barrel and muons in the forward muon arm, - Jets with high Pτ tracks in one single TRD stack.

Application of Rossi-type detectors in radiation protection

International Nuclear Information System (INIS)

Menzel, H.G.; Hartmann, G.H.; Krauss, O.; Deutsches Krebsforschungszentrum, Heidelberg

1983-01-01

Rossi-type detectors can measure the energy dose and the pertinent quality factor simultaneously and independent of the radiation. This is possible because these detectors are able to measure the energy as well as the LET distribution of the measured radiation. The quality factor is then calculated on this basis. The principle of measurement, problems and solutions are discussed. (orig./HP) [de

Diamond and silicon pixel detectors in high radiation environments

Energy Technology Data Exchange (ETDEWEB)

Tsung, Jieh-Wen

2012-10-15

Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10{sup 16} particles per cm{sup 2}, which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10{sup 15} particles per cm{sup 2}.

Diamond and silicon pixel detectors in high radiation environments

International Nuclear Information System (INIS)

Tsung, Jieh-Wen

2012-10-01

Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10 16 particles per cm 2 , which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10 15 particles per cm 2 .

Radiation and detectors introduction to the physics of radiation and detection devices

CERN Document Server

Cerrito, Lucio

2017-01-01

This textbook provides an introduction to radiation, the principles of interaction between radiation and matter, and the exploitation of those principles in the design of modern radiation detectors. Both radiation and detectors are given equal attention and their interplay is carefully laid out with few assumptions made about the prior knowledge of the student. Part I is dedicated to radiation, broadly interpreted in terms of energy and type, starting with an overview of particles and forces, an extended review of common natural and man-made sources of radiation, and an introduction to particle accelerators. Particular attention is paid to real life examples, which place the types of radiation and their energy in context. Dosimetry is presented from a modern, user-led point of view, and relativistic kinematics is introduced to give the basic knowledge needed to handle the more formal aspects of radiation dynamics and interaction. The explanation of the physics principles of interaction between radiation an...

Department of Radiation Detectors: Overview

International Nuclear Information System (INIS)

Piekoszewski, J.

1999-01-01

Full text: Work carried out in 1998 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. SEMICONDUCTOR DETECTORS: Semiconductor detectors of ionizing radiation are among the basic tools utilized in such fields of research and industry as nuclear physics, high energy physics, medical (oncology) radiotherapy, radiological protection, environmental monitoring, energy dispersive X-ray fluorescence non-destructive analysis of chemical composition, nuclear power industry. The departmental objectives are: a search for new types of detectors; producing unique detectors tailored for physics experiments; manufacturing standard detectors for radiation measuring instruments; scientific development of the staff. These objectives were accomplished in 1998 particularly by: research on unique thin silicon detectors for identification of particles in E-ΔE telescopes, modernization of technology of manufacturing Ge(Li) detectors capable of detecting broader range of gamma energies, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. In accomplishment of the above the Department co-operated with groups of physicists from IPJ, PAN Institute of Physics (Warsaw), and with some technology Institutes based in Warsaw (ITME, ITE). Some detectors and services have been delivered to customers on a commercial basis. X-Ray TUBE GENERATORS: The Department conducts research on design and technology of manufacturing X-ray generators as well as on imaging and dosimetry of X-ray beams. Various models of special construction X-ray tubes and their power supplies are under construction. In 1998 work concentrated on: completing laboratory equipment for manufacturing X-ray tubes and their components, developing technology of manufacturing X-ray tubes and their components, completing a laboratory set-up with

Development of large area silicon semiconductor detectors for use in the current mode

CERN Document Server

Ouyang Xia Opin; Li Zhen Fu; Zhang Guo Guang; Zhang Qi; Zhang Xia; Song Xian Cai; Jia Huan Yi; Lei Jian Hua; Sun Yuan Cheng

2002-01-01

Large area silicon semiconductor detectors for use in the current mode, with their dimensions of phi 40, phi 50 and phi 60 mm, their depletion thickness of 200-300 mu m, have been developed. Their performance measurements have been made, which indicate that the developed detectors can satisfactorily meet the needs in expectation. Compared with the detectors commercially available on the market, authors' large PIN detectors can serve both as reliable and efficient high-resolution devices for nuclear counting experiments, as well as monitors of high-intensity radiation fields in the current mode under a bias of 100-1000 V, while the detectors commercially available are only for the counting use

Performance measurements of hybrid PIN diode arrays

International Nuclear Information System (INIS)

Jernigan, J.G.; Arens, J.F.; Collins, T.; Herring, J.; Shapiro, S.L.; Wilburn, C.D.

1990-05-01

We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 x 64 pixels, each 120 μm square, and the other format having 256 x 256 pixels, each 30 μm square. In both cases, the thickness of the PIN diode layer is 300 μm. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs

Simple dynamic electromagnetic radiation detector

Science.gov (United States)

Been, J. F.

1972-01-01

Detector monitors gamma dose rate at particular position in a radiation facility where a mixed neutron-gamma environment exists, thus determining reactor power level changes. Device also maps gamma intensity profile across a neutron-gamma beam.

Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences

CERN Document Server

Mekki, J; Glaser, M; Moll, M; Dusseau, L

2010-01-01

The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.

Radiation effects in polymers for plastic scintillation detectors

International Nuclear Information System (INIS)

Pla-Dalmau, A.; Bross, A.D.; Hurlbut, C.R.; Moser, S.W.

1994-01-01

Recent developments in both scintillating plastic optical fibers and photon detection devices have spawned new applications for plastic scintillator detectors. This renewed attention has encouraged research that addresses the radiation stability of plastic scintillators. The optical quality of the polymer degrades with exposure to ionizing radiation and thus the light yield of the detector decreases. A complete understanding of all the mechanisms contributing to this radiation-induced degradation of the polymer can lead to techniques that will extend the radiation stability of these materials. Various radiation damage studies have been performed under different atmospheres and dose rates. Currently, the use of additives to preserve the optical properties of the polymer matrix under radiation is being investigated. The authors discuss the effect of certain antioxidants, plasticizers, and cross-linking agents on the radiation resilience of plastic scintillators

Gamma-ray detectors for intelligent, hand-held radiation monitors

International Nuclear Information System (INIS)

Fehlau, P.E.

1983-01-01

Small radiation detectors based on HgI 2 , bismuth germanate (BGO), plastic, or NaI(Tl) detector materials were evaluated for use in small, lighweight radiation monitors. The two denser materials, HgI 2 and BGO, had poor resolution at low-energy and thus performed less well than NaI(Tl) in detecting low-energy gamma rays from bare, enriched uranium. The plastic scintillator, a Compton recoil detector, also performed less well at low gamma-ray energy. Two small NaI(Tl) detectors were suitable for detecting bare uranium and sheilded plutonium. One became part of a new lightweight hand-held monitor and the other found uses as a pole-mounted detector for monitoring hard-to-reach locations

Use of HgI2 as gamma radiation detector

International Nuclear Information System (INIS)

Perez Morales, J.M.

1993-01-01

The Mercuric Iodide (HgI 2 ) has become one of the most promising room temperature semiconductors for the construction of X and gamma radiation detectors. The classical methods of spectroscopy have not demonstrated to achieve optimum results with HgI 2 detectors, mainly due to its particular carrier transport properties. Several alternative spectroscopic methods developed in the last ten years are presented and commented, selecting for a complete study one of them: 'The Partial Charge Collection Method'. The transport properties of the carriers generated by the radiation in the detector is specially important for understanding the spectroscopic behaviour of the HgI 2 detectors. For a rigorous characterization of this transport, it has been studied a digital technique for the analysis of the electric pulses produced by the radiation. Theoretically, it has been developed a Monte Carlo simulation of the radiation detection and the electronic signal treatment processes with these detectors in the energy range of 60-1300 KeV. These codes are applied to the study of the The Partial Charge Collection Method and its comparison with gaussian methods. Experimentally, this digital techniques is used for the study of the transport properties of thin HgI 2 detectors. Special interest is given to the contribution of the slower carriers, the holes, obtaining some consequent of spectroscopic interest. Finally, it is presented the results obtained with the first detectors grown and mounted in CIEMAT with own technology. (author). 129 ref

Electromagnetic disturbance neutralizing radiation detector

International Nuclear Information System (INIS)

Gripentog, W.G.

1975-01-01

A radiation detector of the Neher-White type is described which automatically neutralizes induced negative charges on the electrometer tube control grid which shut off the electrometer tube. The detector includes means for establishing a voltage of one polarity in response to plate current and voltage of opposite polarity in response to an absence of plate current and means for connecting the control grid to a reference potential for draining the negative charge in response to the voltage of opposite polarity. (author)

Radiation response issues for infrared detectors

Science.gov (United States)

Kalma, Arne H.

1990-01-01

Researchers describe the most important radiation response issues for infrared detectors. In general, the two key degradation mechanisms in infrared detectors are the noise produced by exposure to a flux of ionizing particles (e.g.; trapped electronics and protons, debris gammas and electrons, radioactive decay of neutron-activated materials) and permanent damage produced by exposure to total dose. Total-dose-induced damage is most often the result of charge trapping in insulators or at interfaces. Exposure to short pulses of ionization (e.g.; prompt x rays or gammas, delayed gammas) will cause detector upset. However, this upset is not important to a sensor unless the recovery time is too long. A few detector technologies are vulnerable to neutron-induced displacement damage, but fortunately most are not. Researchers compare the responses of the new technologies with those of the mainstream technologies of PV HgCdTe and IBC Si:As. One important reason for this comparison is to note where some of the newer technologies have the potential to provide significantly improved radiation hardness compared with that of the mainstream technologies, and thus to provide greater motivation for the pursuit of these technologies.

Solid-state radiation detectors technology and applications

CERN Document Server

2015-01-01

The book discusses the current solid state material used in advance detectors manufacturing and their pros and cons and how one can tailor them using different techniques, to get the maximum performance. The book is application oriented to radiation detectors for medical, X and gamma rays application, and good reference with in-depth discussion of detector's physics as it relates to medical application tailored for engineers and scientists.

Photovoltaic radiation detector element

International Nuclear Information System (INIS)

Agouridis, D.C.

1980-01-01

A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein in the edge of which closely approaches but is spaced from the current collector strips

Silicon P.I.N. Junctions used for studies of radiation damage; Etude de l'irradiation aux neutrons rapides du silicium au moyen de jonctions P.I.N

Energy Technology Data Exchange (ETDEWEB)

Lanore, J. [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

1964-06-01

Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [French] L'irradiation de structures P.I.N. etait faite dans le but d'etudier principalement la mise au point d'un dosimetre a ''radiation damage'' et aussi pour etudier plus profondement le silicium lui-meme. On sait que le taux de recombinaison electrons-trous est une fonction lineaire du taux de defauts introduits par irradiation aux neutrons. Deux methodes ont ete utilisees pour atteindre ce taux de recombinaison: mesures de la caracteristique directe, mesures du temps de retournement. Pour expliquer de quelle facon ces parametres dependent du taux de recombinaison. Nous avons donne une theorie de la jonction P.I.N. Nous avons aussi donne l'allure des variations du temps de vie des porteurs en fonction de la temperature. Nous avons d'autre part effectue des recuits entre 70 et 700 K, domaine dans lequel nous avons trouve cinq etapes de ''guerison'' avec les energies d'activation correspondantes. En application de ces etudes nous avons mis ou point un

Optoelectronic~Analogue~Signal~Transfer~for~LHC~Detectors

CERN Multimedia

Stefanini, G; Reinhart, F K; Batten, J C

2002-01-01

% RD23 \\\\ \\\\ \\\\ \\\\The main goal of the RD23 project is to develop optical fiber links for volume application in the analog signal transfer of tracking detectors at LHC. Key requirements were radiation hardness, low power dissipation and affordable cost. The technique proposed initially was based on external modulation, and the project was targeted at the development of electro-optic intensity modulators as transmitters. In 1996, this approach was abandoned in favor of a system based on directly modulated semiconductor laser transmitters. This configuration was subsequently adopted as baseline choice by the CMS experiment for its tracker readout system. \\\\ \\\\In view of qualifying the radiation hardness of all optical link components to be installed at LHC front-ends, extensive validation tests took place in 1997 and 1998. Irradiations of lasers, pin-diodes, optical fibers and connectors were carried out with neutrons ($\\sim$6MeV) and $^{60}$Co gamma rays. In addition, lasers and pin-diodes in die as well as pa...

UTILIZATION OF PHOSWICH DETECTORS FOR SIMULTANEOUS, MULTIPLE RADIATION DETECTION

International Nuclear Information System (INIS)

Miller, William H.; Manuel Diaz de Leon

2003-01-01

A phoswich radiation detector is comprised of a phosphor sandwich in which several different phosphors are viewed by a common photomultiplier. By selecting the appropriate phosphors, this system can be used to simultaneously measure multiple radiation types (alpha, beta, gamma and/or neutron) with a single detector. Differentiation between the signals from the different phosphors is accomplished using digital pulse shape discrimination techniques. This method has been shown to result in accurate discrimination with highly reliable and versatile digital systems. This system also requires minimal component count (i.e. only the detector and a computer for signal processing). A variety of detectors of this type have been built and tested including: (1) a triple phoswich system for alpha/beta/gamma swipe counting, (2) two well-type detectors for measuring low levels of low energy photons in the presence of a high energy background, (3) a large area detector for measuring beta contamination in the presence of a photon background, (4) another large area detector for measuring low energy photons from radioactive elements such as uranium in the presence of a photon background. An annular geometry, triple phoswich system optimized for measuring alpha/beta/gamma radiation in liquid waste processing streams is currently being designed

UTILIZATION OF PHOSWICH DETECTORS FOR SIMULTANEOUS, MULTIPLE RADIATION DETECTION

Energy Technology Data Exchange (ETDEWEB)

William H. Miller; Manuel Diaz de Leon

2003-04-15

A phoswich radiation detector is comprised of a phosphor sandwich in which several different phosphors are viewed by a common photomultiplier. By selecting the appropriate phosphors, this system can be used to simultaneously measure multiple radiation types (alpha, beta, gamma and/or neutron) with a single detector. Differentiation between the signals from the different phosphors is accomplished using digital pulse shape discrimination techniques. This method has been shown to result in accurate discrimination with highly reliable and versatile digital systems. This system also requires minimal component count (i.e. only the detector and a computer for signal processing). A variety of detectors of this type have been built and tested including: (1) a triple phoswich system for alpha/beta/gamma swipe counting, (2) two well-type detectors for measuring low levels of low energy photons in the presence of a high energy background, (3) a large area detector for measuring beta contamination in the presence of a photon background, (4) another large area detector for measuring low energy photons from radioactive elements such as uranium in the presence of a photon background. An annular geometry, triple phoswich system optimized for measuring alpha/beta/gamma radiation in liquid waste processing streams is currently being designed.

Radiation effects on II-VI compound-based detectors

CERN Document Server

Cavallini, A; Dusi, W; Auricchio, N; Chirco, P; Zanarini, M; Siffert, P; Fougeres, P

2002-01-01

The performance of room temperature CdTe and CdZnTe detectors exposed to a radiation source can be strongly altered by the interaction of the ionizing particles and the material. Up to now, few experimental data are available on the response of II-VI compound detectors to different types of radiation sources. We have carried out a thorough investigation on the effects of gamma-rays, neutrons and electron irradiation both on CdTe : Cl and Cd sub 0 sub . sub 9 Zn sub 0 sub . sub 1 Te detectors. We have studied the detector response after radiation exposure by means of dark current measurements and of quantitative spectroscopic analyses at low and medium energies. The deep traps present in the material have been characterized by means of PICTS (photo-induced current transient spectroscopy) analyses, which allow to determine the trap apparent activation energy and capture cross-section. The evolution of the trap parameters with increasing irradiation doses has been monitored for all the different types of radiati...

Fast infrared detectors for beam diagnostics with synchrotron radiation

International Nuclear Information System (INIS)

Bocci, A.; Marcelli, A.; Pace, E.; Drago, A.; Piccinini, M.; Cestelli Guidi, M.; De Sio, A.; Sali, D.; Morini, P.; Piotrowski, J.

2007-01-01

Beam diagnostic is a fundamental constituent of any particle accelerators either dedicated to high-energy physics or to synchrotron radiation experiments. All storage rings emit radiations. Actually they are high brilliant sources of radiation: the synchrotron radiation emission covers from the infrared range to the X-ray domain with a pulsed structure depending on the temporal characteristics of the stored beam. The time structure of the emitted radiation is extremely useful as a tool to perform time-resolved experiments. However, this radiation can be also used for beam diagnostic to determine the beam stability and to measure the dimensions of the e - or e + beam. Because of the temporal structure of the synchrotron radiation to perform diagnostic, we need very fast detectors. Indeed, the detectors required for the diagnostics of the stored particle bunches at third generation synchrotron radiation sources and FEL need response times in the sub-ns and even ps range. To resolve the bunch length and detect bunch instabilities, X-ray and visible photon detectors may be used achieving response times of a few picoseconds. Recently, photon uncooled infrared devices optimized for the mid-IR range realized with HgCdTe semiconductors allowed to obtain sub-nanosecond response times. These devices can be used for fast detection of intense IRSR sources and for beam diagnostic. We present here preliminary experimental data of the pulsed synchrotron radiation emission of DAΦNE, the electron positron collider of the LNF laboratory of the INFN, performed with new uncooled IR detectors with a time resolution of a few hundreds of picoseconds

Assessment of integrated solar ultraviolet radiation by PM-355 detectors

International Nuclear Information System (INIS)

Abu-Jarad, F.; Al-Jarallah, M.I.; Elhadidy, M.A.; Shaahid, S.M.; Fazal-ur-Rehman

2000-01-01

The increase in environmental solar UV radiation due to depletion of ozone layer is a recent challenge to human health (skin cancer and eye effects) in countries having clear skies. Therefore, applying integrated, passive and inexpensive techniques to assess solar UV radiation is very much essential. Measurements of environmental solar UV radiation in Dhahran, Saudi Arabia area were carried out for a period of two months in the summer period in 1996 using two techniques in parallel namely: passive nuclear track detectors and active solar UV radiometers. Some of the nuclear track detectors were mounted in different conditions such as: under shadow band, on solar tracking mechanism following the solar rays. Others were mounted on perpendicular, tilted and horizontal surfaces in sunlight. All detectors were attached to a wooden background of the same thickness (0.5 cm) to eliminate interference of the heat effect of various support materials and have uniformity of the support materials. The assessment was carried out for different periods extending from two to nine weeks continuously. The investigated period covered the hottest months in Saudi Arabia (July and August) when the sky was clear of clouds. The results indicate linear correlation between alpha track diameters and the integrated exposure to solar UV as measured by the solar UV radiometer for all nuclear track detector positions and orientations. The highest slope has been observed for the detectors placed on solar tracking mechanism following the solar rays and the lowest from detectors oriented under the shadow band on horizontal position (measuring the diffused UV radiation only). The results show that most of the measured UV radiation (60%) were from the diffused UV radiation. The characteristics of the upper layer of the detectors are changed after chemical etching very quickly, with increase in the exposure time to UV solar radiation at certain orientation. The results encourage the use of nuclear track

Assessment of integrated solar ultraviolet radiation by PM-355 detectors

Energy Technology Data Exchange (ETDEWEB)

Abu-Jarad, F.; Al-Jarallah, M.I.; Elhadidy, M.A.; Shaahid, S.M.; Fazal-ur-Rehman

2000-06-01

The increase in environmental solar UV radiation due to depletion of ozone layer is a recent challenge to human health (skin cancer and eye effects) in countries having clear skies. Therefore, applying integrated, passive and inexpensive techniques to assess solar UV radiation is very much essential. Measurements of environmental solar UV radiation in Dhahran, Saudi Arabia area were carried out for a period of two months in the summer period in 1996 using two techniques in parallel namely: passive nuclear track detectors and active solar UV radiometers. Some of the nuclear track detectors were mounted in different conditions such as: under shadow band, on solar tracking mechanism following the solar rays. Others were mounted on perpendicular, tilted and horizontal surfaces in sunlight. All detectors were attached to a wooden background of the same thickness (0.5 cm) to eliminate interference of the heat effect of various support materials and have uniformity of the support materials. The assessment was carried out for different periods extending from two to nine weeks continuously. The investigated period covered the hottest months in Saudi Arabia (July and August) when the sky was clear of clouds. The results indicate linear correlation between alpha track diameters and the integrated exposure to solar UV as measured by the solar UV radiometer for all nuclear track detector positions and orientations. The highest slope has been observed for the detectors placed on solar tracking mechanism following the solar rays and the lowest from detectors oriented under the shadow band on horizontal position (measuring the diffused UV radiation only). The results show that most of the measured UV radiation (60%) were from the diffused UV radiation. The characteristics of the upper layer of the detectors are changed after chemical etching very quickly, with increase in the exposure time to UV solar radiation at certain orientation. The results encourage the use of nuclear track

Silicon radiation detectors: materials and applications

International Nuclear Information System (INIS)

Walton, J.T.; Haller, E.E.

1982-10-01

Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

Low dose radiation damage effects in silicon strip detectors

International Nuclear Information System (INIS)

Wiącek, P.; Dąbrowski, W.

2016-01-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Low dose radiation damage effects in silicon strip detectors

Science.gov (United States)

Wiącek, P.; Dąbrowski, W.

2016-11-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Isotope detectors and radiation detectors for test reliability techniqui. A preliminary project

International Nuclear Information System (INIS)

Christell, R.

1977-03-01

A survey is done of small and simple components for use as detectors for ionizing radiation, as well as different methods and components producing images of radiation fields based on position sensitive detectors. The investigation has resulted in a system for detection of stones in wood. In a second project isotope excited x ray fluorescence has been used for analysis of material resulting from wear of mechanical components. A facility for analysis has been built and test analysis has been performed. Methods for continous wear control with possibility to forecast breakdowns have been investigated. (K.K.)

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Ducourthial, Audrey; The ATLAS collaboration

2017-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15} n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside...

Modeling radiation damage to pixel sensors in the ATLAS detector

CERN Document Server

Ducourthial, Audrey; The ATLAS collaboration

2017-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15}n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside ...

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Rossini, Lorenzo; The ATLAS collaboration

2018-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High- Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for basic...

Superconducting NbN detectors for synchrotron radiation

Energy Technology Data Exchange (ETDEWEB)

Semenov, Alexei; Richter, Heiko; Huebers, Heinz-Wilhelm [DLR, Instiute of Planetary Research, Berlin (Germany); Ilin, Konstantin; Siegel, Michael [Institute of Micro- and Nanoelectronic Systems, University of Karlsruhe (Germany)

2009-07-01

We present development of a special type of hot-electron bolometers that is designed to optimally detect pulsed synchrotron radiation in the terahertz frequency range. The enlarged log-spiral antenna makes it possible to sense the low-frequency part of the spectrum in coherent and non-coherent regime. The device follows the layout of a typical HEB mixer. The radiation is coupled quasioptically with the 6-mm elliptical silicon lens. The bolometer has the noise equivalent power 2 nW per square root Hz and responds to a few picoseconds long radiation pulse with the electric pulse having full width at half maximum of 160 ps. We present results obtained with this type of detector at different synchrotron facilities and discuss possible improvements of the detector performance.

Radiation flaw detector for testing non-uniform surface bodies of revolution

International Nuclear Information System (INIS)

Valevich, M.I.

1984-01-01

Radiation flaw detector for testing bodies of revolution with non-uniform surface, welded joints, etc., based on spatial filtration and differentiation of ionizing radiation flux has been described. The calculation of the most important unit of flaw detector - integrators - is made. Experimental studies of the sensitivity have shown, that the radiation flaw detector can be used for rapid testing of products with the sensitivity comparable with the sensitivity of radiographic testing of steel

Fabrication of radiation detector using PbI2 crystals

International Nuclear Information System (INIS)

Shoji, T.; Ohba, K.; Suehiro, T.; Hiratate, Y.

1995-01-01

Radiation detectors have been fabricated from lead iodide (PbI 2 ) crystals grown by two methods: zone melting and Bridgman methods. In response characteristics of the detector fabricated from crystals grown by the zone melting method, a photopeak for γ-rays from an 241 Am source (59.5 KeV) has been clearly observed with applied detector bias of 500 V at room temperature. The hole drift mobility is estimated to be about 5.5 cm 2 /Vs from measurement of pulse rise time for 5.48 MeV α-rays from 241 Am. By comparing the detector bias versus saturated peak position of the PbI 2 detector with that of CdTe detector, the average energy for producing electron-hole pairs is estimated to be about 8.4 eV for the PbI 2 crystal. A radiation detector fabricated from PbI 2 crystals grown by the Bridgman method, however, exhibited no response for γ-rays

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Status and trends of solid state track detector use in radiation protection monitoring

International Nuclear Information System (INIS)

Doerschel, B.

1980-01-01

The characteristic properties of solid state track detectors allow them to be used for determining the radiation fields of charged and uncharged particles and, consequently, for solving some problems involved in radiation protection monitoring. Aptitude of various detector materials is investigated on the basis of the track formation mechanism taking into account the properties of the particles to be detected. Use of these detectors in radiation protection monitoring presumes appropriate methods of intensifying the latent tracks, which are discussed as a function of various physical parameters. Readout methods of solid state track detectors are based on variations in detector properties determined by number and size of particle tracks in the detector. The choice of a special readout method, among other things, depends on the purpose, detector material, and pretreatment of the detectors. The most prospective methods are described and investigated with respect to their possible use in various fields of radiation protection monitoring. The trends of development of the application of solid state track detectors in radiation protection monitoring are discussed, using some typical applications as examples. (author)

3-D GaAs radiation detectors

International Nuclear Information System (INIS)

Meikle, A.R.; Bates, R.L.; Ledingham, K.; Marsh, J.H.; Mathieson, K.; O'Shea, V.; Smith, K.M.

2002-01-01

A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through the detector bulk is described. The development of the technology to fabricate such a detector is presented along with electrical and radiation source tests. Simulations of the electrical characteristics are given for detectors of various dimensions. Laser drilling, wet chemical etching and metal evaporation were used to create a cell array of nine electrodes, each with a diameter of 60 μm and a pitch of 210 μm. Electrical measurements showed I-V characteristics with low leakage currents and high breakdown voltages. The forward and reverse I-V measurements showed asymmetrical characteristics, which are not seen in planar diodes. Spectra were obtained using alpha particle illumination. A charge collection efficiency of 50% and a S/N ratio of 3 : 1 were obtained. Simulations using the MEDICI software package were performed on cells with various dimensions and were comparable with experimental results. Simulations of a nine-electrode cell with 10 μm electrodes with a 25 μm pitch were also performed. The I-V characteristics again showed a high breakdown voltage with a low leakage current but also showed a full depletion voltage of just 8 V

Silicon detectors for x and gamma-ray with high radiation resistance

International Nuclear Information System (INIS)

Cimpoca, Valerica; Popescu, Ion V.; Ruscu, Radu

2001-01-01

Silicon detectors are widely used in X and gamma-ray spectroscopy for direct detection or coupled with scintillators in high energy nuclear physics (modern collider experiments are representative), medicine and industrial applications. In X and gamma dosimetry, a low detection limit (under 6 KeV) with silicon detectors becomes available. Work at the room temperature is now possible due to the silicon processing evolution, which assures low reverse current and high life time of carriers. For several years, modern semiconductor detectors have been the primary choice for the measurement of nuclear radiation in various scientific fields. Nowadays the recently developed high resolution silicon detectors found their way in medical applications. As a consequence many efforts have been devoted to the development of high sensitivity and radiation hardened X and gamma-ray detectors for the energy range of 5 - 150 keV. The paper presents some results concerning the technology and behaviour of X and Gamma ray silicon detectors used in physics research, industrial and medical radiography. The electrical characteristics of these detectors, their modification after exposure to radiation and the results of spectroscopic X and Gamma-ray measurements are discussed. The results indicated that the proposed detectors enables the development of reliable silicon detectors to be used in controlling the low and high radiation levels encountered in a lot of application

Radiation-hard semiconductor detectors for SuperLHC

CERN Document Server

Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim

2005-01-01

An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

Hydrogenated amorphous silicon radiation detectors: Material parameters; radiation hardness; charge collection

International Nuclear Information System (INIS)

Qureshi, S.

1991-01-01

Properties of hydrogenated amorphous silicon p-i-n diodes relevant to radiation detection applications were studied. The interest in using this material for radiation detection applications in physics and medicine was motivated by its high radiation hardness and the fact that it can be deposited over large area at relatively low cost. Thick, fully depleted a-Si:H diodes are required for sufficient energy deposition by a charged particle and better signal to noise ratio. A sizeable electric field is essential for charge collection in a -Si:H diodes. The large density of ionized defects that exist in the i layer when the diode is under DC bias causes the electric field to be uniform. Material parameters, namely carrier mobility and lifetime and the ionized defect density in thick a-Si:H p-i-n diodes were studied by the transient photoconductivity method. The increase in diode leakage current with reverse bias over the operating bias was consistent with the Poole-Frenkel effect, involving excitation of carriers from neutral defects. The diode noise over the operating voltage range was completely explained in terms of the shot noise component for CR-(RC) 4 (pseudo-Gaussian) shaping at 3 μs shaping time and the noise component at 0 V bias (delta and thermal noise) added in quadrature. Irradiation with 1 Mev neutrons produced no significant degradation in leakage current and noise at fluences exceeding 4 x 10 14 cm -2 . Irradiation with 1.4 Mev proton fluence of 1 x 10 14 cm -2 decreased carrier lifetime by a factor of ∼4. Degradation in leakage current and noise became significant at proton fluence of ∼10 13 cm -2

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Rossini, Lorenzo; The ATLAS collaboration

2018-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm^2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for b...

Modeling radiation damage to pixel sensors in the ATLAS detector

Science.gov (United States)

Ducourthial, A.

2018-03-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC) . As the closest detector component to the interaction point, these detectors will be subject to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC) [1], the innermost layers will receive a fluence in excess of 1015 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is essential in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects on the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside early studies with LHC Run 2 proton-proton collision data.

Study of radiation detectors response in standard X, gamma and beta radiation standard beams

International Nuclear Information System (INIS)

Nonato, Fernanda Beatrice Conceicao

2010-01-01

The response of 76 Geiger-Mueller detectors, 4 semiconductor detectors and 34 ionization chambers were studied. Many of them were calibrated with gamma radiation beams ( 37 Cs and 60 Co), and some of them were tested in beta radiation ( 90 Sr+ 9' 0Y e 204 Tl) and X radiation (N-60, N-80, N-100, N-150) beams. For all three types of radiation, the calibration factors of the instruments were obtained, and the energy and angular dependences were studied. For beta and gamma radiation, the angular dependence was studied for incident radiation angles of 0 deg and +- 45 deg. The curves of the response of the instruments were obtained over an angle interval of 0 deg to +- 90 deg, for gamma, beta and X radiations. The calibration factors obtained for beta radiation were compared to those obtained for gamma radiation. For gamma radiation, 24 of the 66 tested Geiger-Mueller detectors presented results for the energy dependence according to international recommendation of ISO 4037-2 and 56 were in accordance with the Brazilian ABNT 10011 recommendation. The ionization chambers and semiconductors were in accordance to national and international recommendations. All instruments showed angular dependence less than 40%. For beta radiation, the instruments showed unsatisfactory results for the energy dependence and angular dependence. For X radiation, the ionization chambers presented results for energy dependence according to the national recommendation, and the angular dependence was less than 40%. (author)

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D.; Goodman, C.; Fujieda, I.

1992-07-01

We describe the characteristics of thin (1 μm) and thick (> 30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, γ rays and thermal neutrons. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2∼5 μm) gadolinium converters on 30 μm thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described

75 MeV boron ion irradiation studies on Si PIN photodiodes

Energy Technology Data Exchange (ETDEWEB)

Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

2013-12-01

The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

Performance And Radiation Hardness Of The Atlas/sct Detector Module

CERN Document Server

Eklund, L

2003-01-01

The ATLAS experiment is a general purpose experiment being constructed at the Large Hadron Collider (LHC) at FERN, Geneva. ATLAS is designed to exploit the full physics potential of LHC, in particular to study topics concerning the Higgs mechanism, Super-symmetry and CP violation. The cross sections for the processes under study are extremely small, requiring very high luminosity colliding beams. The Semiconductor Tracker (SCT) is an essential part of the Inner Detector tracking system of ATLAS. The active elements of the SCT is 4088 detector modules, tiled on four barrel cylinders and eighteen endcap disks. As a consequence of the high luminosity, the detector modules will operate in a harsh radiation environment. This thesis describes work concerning radiation hardness, beam test performance and methods for production testing of detector modules. The radiation hardness studies have been focused on the electrical performance of the front-end ASIC and the detector module. The results have identified features ...

Development of radiation tolerant semiconductor detectors for the Super-LHC

CERN Document Server

Moll, M; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Betta, G F D; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Fretwurst, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Sevilla, S G; Gorelov, I; Goss, J; Bates, A G; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, Roland Paul; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J A; Klaiber Lodewigs, J; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, S; Lazanu, I; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li Z; Lindström, G; Linhart, V; Litovchenko, A P; Litovchenko, P G; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Garcia, S Mi; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; OShea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

2005-01-01

The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 ...

RD50 Collaboration overview: Development of new radiation hard detectors

Energy Technology Data Exchange (ETDEWEB)

Kuehn, S., E-mail: susanne.kuehn@cern.ch

2016-07-11

Silicon sensors are widely used as tracking detectors in high energy physics experiments. This results in several specific requirements like radiation hardness and granularity. Therefore research for highly performing silicon detectors is required. The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for application in high luminosity collider experiments. Extensive research is ongoing in different fields since 2001. The collaboration investigates both defect and material characterization, detector characterization, the development of new structures and full detector systems. The report gives selected results of the collaboration and places an emphasis on the development of new structures, namely 3D devices, CMOS sensors in HV technology and low gain avalanche detectors. - Highlights: • The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for high luminosity collider experiments. • The collaboration investigates defect, material and detector characterization, the development of new structures and full detector systems. • Results of measured data of n-in-p type sensors allow recommendations for silicon tracking detectors at the HL-LHC. • The charge multiplication effect was investigated to allow its exploitation and resulted in new structures like LGAD sensors. • New sensor types like slim and active edge sensors, 3D detectors, and lately HVCMOS devices were developed in the active collaboration.

Radiation damage in silicon. Defect analysis and detector properties

Energy Technology Data Exchange (ETDEWEB)

Hoenniger, F.

2008-01-15

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep

Radiation damage in silicon. Defect analysis and detector properties

International Nuclear Information System (INIS)

Hoenniger, F.

2008-01-01

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after γ-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO i , C i O i , C i C s , VP or V 2 several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO 2 defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep acceptor, a model has been introduced to

A large area transition radiation detector for the NOMAD experiment

Science.gov (United States)

Bassompierre, G.; Bermond, M.; Berthet, M.; Bertozzi, T.; Détraz, C.; Dubois, J.-M.; Dumps, L.; Engster, C.; Fazio, T.; Gaillard, G.; Gaillard, J.-M.; Gouanère, M.; Manola-Poggioli, E.; Mossuz, L.; Mendiburu, J.-P.; Nédélec, P.; Palazzini, E.; Pessard, H.; Petit, P.; Petitpas, P.; Placci, A.; Sillou, D.; Sottile, R.; Valuev, V.; Verkindt, D.; Vey, H.; Wachnik, M.

1998-02-01

A transition radiation detector to identify electrons at 90% efficiency with a rejection factor against pions of 10 3 on an area of 2.85 × 2.85 m 2 has been constructed for the NOMAD experiment. Each of its 9 modules includes a 315 plastic foil radiator and a detector plane of 176 vertical straw tubes filled with a xenon-methane gas mixture. Details of the design, construction and operation of the detector are given.

A large area transition radiation detector for the NOMAD experiment

CERN Document Server

Bassompierre, Gabriel; Berthet, M; Bertozzi, T; Détraz, C; Dubois, J M; Dumps, Ludwig; Engster, Claude; Fazio, T; Gaillard, G; Gaillard, Jean-Marc; Gouanère, M; Manola-Poggioli, E; Mossuz, L; Mendiburu, J P; Nédélec, P; Palazzini, E; Pessard, H; Petit, P; Petitpas, P; Placci, Alfredo; Sillou, D; Sottile, R; Valuev, V Yu; Verkindt, D; Vey, H; Wachnik, M

1997-01-01

A transition radiation detector to identify electrons at 90% efficiency with a rejection factor against pions of 10 3 on an area of 2.85 × 2.85 m 2 has been constructed for the NOMAD experiment. Each of its 9 modules includes a 315 plastic foil radiator and a detector plane of 176 vertical straw tubes filled with a xenon-methane gas mixture. Details of the design, construction and operation of the detector are given.

CONCORD: comparison of cosmic radiation detectors in the radiation field at aviation altitudes

Czech Academy of Sciences Publication Activity Database

Meier, M.; Trompier, F.; Ambrožová, Iva; Kubančák, Ján; Matthia, D.; Ploc, Ondřej; Santen, N.; Wirtz, M.

2016-01-01

Roč. 6, MAY (2016), A24 ISSN 2115-7251 Institutional support: RVO:61389005 Keywords : aviation * radiation exposure of aircrew * comparison of radiation detectors * galactic cosmic radiation * ambient dose equivalent Subject RIV: BN - Astronomy, Celestial Mechanics, Astrophysics Impact factor: 2.446, year: 2016

The radiation environment in the ATLAS inner detector

CERN Document Server

Dawson, I

2000-01-01

The radiation environment in the inner detector has been simulated using the particle transport program FLUKA with a recent description of the ATLAS experiment. Given in this paper are particle fluences and doses at positions relevant to the three inner detector subsystems; the Pixel, SCT and TRT detectors. In addition, studies are reported on in which (1) information concerning the optimization of the inner detector neutron-moderators is obtained and (2) the impact of including additional vacuum-equipment material is assessed. (19 refs).

Influence of transfer gate design and bias on the radiation hardness of pinned photodiode CMOS image sensors

International Nuclear Information System (INIS)

Goiffon, V.; Estribeau, M.; Cervantes, P.; Molina, R.; Magnan, P.; Gaillardin, M.

2014-01-01

The effects of Cobalt 60 gamma-ray irradiation on pinned photodiode (PPD) CMOS image sensors (CIS) are investigated by comparing the total ionizing dose (TID) response of several transfer gate (TG) and PPD designs manufactured using a 180 nm CIS process. The TID induced variations of charge transfer efficiency (CTE), pinning voltage, equilibrium full well capacity (EFWC), full well capacity (FWC) and dark current measured on the different pixel designs lead to the conclusion that only three degradation sources are responsible for all the observed radiation effects: the pre-metal dielectric (PMD) positive trapped charge, the TG sidewall spacer positive trapped charge and, with less influence, the TG channel shallow trench isolation (STI) trapped charge. The different FWC evolutions with TID presented here are in very good agreement with a recently proposed analytical model. This work also demonstrates that the peripheral STI is not responsible for the observed degradations and thus that the enclosed layout TG design does not improve the radiation hardness of PPD CIS. The results of this study also lead to the conclusion that the TG OFF voltage bias during irradiation has no influence on the radiation effects. Alternative design and process solutions to improve the radiation hardness of PPD CIS are discussed. (authors)

Radiation detector device for measuring ionizing radiation

International Nuclear Information System (INIS)

Brake, D. von der.

1983-01-01

The device contains a compensating filter circuit, which guarantees measurement of the radiation dose independent of the energy or independent of the energy and direction. The compensating filter circuit contains a carrier tube of a slightly absorbing metal with an order number not higher than 35, which surrounds a tubular detector and which carries several annular filter parts on its surface. (orig./HP) [de

Neutron radiation damage studies on silicon detectors

International Nuclear Information System (INIS)

Li, Zheng; Chen, W.; Kraner, H.W.

1990-10-01

Effects of neutron radiation on electrical properties of Si detectors have been studied. At high neutron fluence (Φ n ≥ 10 12 n/cm 2 ), C-V characteristics of detectors with high resistivities (ρ ≥ 1 kΩ-cm) become frequency dependent. A two-trap level model describing this frequency dependent effect is proposed. Room temperature anneal of neutron damaged (at LN 2 temperature) detectors shows three anneal stages, while only two anneal stages were observed in elevated temperature anneal. 19 refs., 14 figs

Development of a detector-counter for teaching purposes in nuclear instrumentation

International Nuclear Information System (INIS)

Costa, Fabio E. da; Hamada, Margarida M.; Pereira, Maria Conceicao C. Pereira; Mesquita, Carlos H.

2000-01-01

A detector system constituted of a monochannel analyzer with digital counter, amplifier, charge sensitive preamplifier and CsI(Tl) scintillator detector coupled to photodiode PIN was developed to gamma radiation detection. The crystal was grown by Bridgman Method. The crystal luminescence spectra has good match with the photodiode efficiency spectrum. The combination CsI(Tl)- photodiode made at possible to obtain a compact and rugged detector, insensitive to magnetic fields and may be operated at low voltages. This detector system has a baseline for 1 MeV and 2 MeV selected by the use, with two discriminators (inferior and superior) for advancements 10 or 20 KeV division. The system showed good energy linearity in the range from 122 to 1440 KeV. (author)

Technology of fabrication of silicon-lithium detector with superficial junction

International Nuclear Information System (INIS)

Cabal Rodriguez, A.E.; Diaz Garcia, A.; Noriega Scull, C.

1997-01-01

The Silicon nuclear radiation detectors transform the charge produced within the semiconductor crystal, product of the impinges of particles and X rays, in pulses of voltage at the output of the preamplifier. The planar Silicon-Lithium (Si(Li)) detector with superficial junction is basically a Pin structure diode. By mean of the diffusion and drift of Lithium in the Silicon a compensated or depletion region was created. There the incident radiation interacts with the Silicon, producing an electric signal proportional to the detector's energy deposited in the semiconductor. The technological process of fabrication this kind of detectors comprises several stages, some of them complex and of long duration. They also demand a systematic control. The technological process of Si(Li) detector's fabrication was carried out. The detector's fabrication electric characteristics were measured in some steps. An obtained device was mounted in the holder within a cryostat, in order to work to temperature of the liquid nitrogen. The energy resolution of the detector was measured and the value was 180 eV for the line of 5.9 KeV of an Fe-55 source. This value has allowed to work with the detector in energy disperse X-rays fluorescence. (author) [es

Design, fabrication and characterization of an a-Si:H-based UV detector for sunburn applications

Science.gov (United States)

Bayat, Khadijeh; Vygranenko, Yuriy; Sazonov, Andrei; Farrokh-Baroughi, Mahdi

2006-12-01

A thin-film a-Si:H pin detector was developed for selective detection of UVA (320-400 nm) radiation. In order for the fabrication technology to be transferable onto flexible substrates, all of the processing steps were conducted at temperatures less than 125 °C. The measured saturation current as low as 2 pA cm-2 and the ideality factor of 1.47 show that the pin diodes have a good quality i-layer as well as p-i and n-i interfaces. The film thicknesses were optimized to suppress the detector sensitivity in the visible spectral range, and the peak of spectral response was observed at 410 nm. The selectivity estimated from the ratio of the photocurrent generated by UVA absorption to the total photocurrent is 21%.

Performances of Dose Measurement of Commercial Electronic Dosimeters using Geiger Muller Tube and PIN Diode

Energy Technology Data Exchange (ETDEWEB)

Yoo, Hyunjun; Kim, Chankyu; Kim, Yewon; Kim, Giyoon; Cho, Gyuseong [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

2014-05-15

There are two categories in personal dosimeters, one is passive type dosimeter such as TLD (thermoluminescence dosimeter) and the other is active type dosimeter such as electronic dosimeter can show radiation dose immediately while TLD needs long time to readout its data by heating process. For improving the reliability of measuring dose for any energy of radiations, electronic dosimeter uses energy filter by metal packaging its detector using aluminum or copper, but measured dose of electronic dosimeter with energy filter cannot be completely compensated in wide radiation energy region. So, in this paper, we confirmed the accuracy of dose measurement of two types of commercial EPDs using Geiger Muller tube and PIN diode with CsI(Tl) scintillator in three different energy of radiation field. The experiment results for Cs-137 was almost similar with calculation value in the results of both electronic dosimeters, but, the other experiment values with Na-22 and Co-60 had higher error comparing with Cs-137. These results were caused by optimization of their energy filters. The optimization was depending on its thickness of energy filter. So, the electronic dosimeters have to optimizing the energy filter for increasing the accuracy of dose measurement or the electronic dosimeter using PIN diode with CsI(Tl) scintillator uses the multi-channel discriminator for using its energy information.

Characteristics for heavy ions and micro-dosimetry in radiation detectors

International Nuclear Information System (INIS)

Doke, Tadayoshi

1978-01-01

The characteristics of radiation detectors for heavy ions generally present more complex aspects as compared with those for electron beam and γ-ray. There is the ''Katz theory'' applying the target theory in radiobiology phenomenologically to radiation detectors. Here, first, the Katz theory for radiation detectors is explained, then its applications to nuclear plates, solid state track detectors, scintillation detectors and thermoluminescence dosimeters are described, respectively. The theory is used for the calibration of the nuclear charge of heavy ions in nuclear plates and recently is used to simulate the flight tracks of heavy ions or magnetic monopoles. In solid state track detectors, the threshold value of the energy given along the tracks of heavy ions is inherent to a detector, and the Katz theory is applicable as the measure of the threshold. The theory seems to be superior to the other methods. However, it has disadvantages that the calculation is not simple and is difficult for wide objects. In scintillation detectors, the scintillation efficiency is not a single function of dE/dx, but depends on the kinds of heavy ions, which Katz succeeded to describe quantitatively with his theory. Such result has also been produced that the dependence of thermoluminescence dosimeters such as LiF on LET by Katz theory agreed fairly well with experiments. (Wakatsuki, Y.)

Instrumentation for characterizing materials and composed semiconductors for ionizing radiation detectors

International Nuclear Information System (INIS)

Paschoal, Arquimedes J.A.; Leite, Adolfo M.B.; Nazzre, Fabio V.B.; Santos, Luiz A.P.

2007-01-01

The purpose of this work is the development of instrumentation for characterizing some type of ionizing radiation detectors. Those detectors are being manufactured by the Nuclear Instrumentation Laboratory at CRCN/Recife and can be used both on photon beam and with particles. Such detectors consist of semiconductor material in the form of films generated by oxide growing or by means of semiconductor material deposition in a substrate. Those materials can be made of metals, semi-metals, composites or semiconductor polymers. Prior to expose those detectors to ionizing radiation, it must be physically and electrically characterized. In this intention it was developed an electromechanical system. An electrical circuit was built to measure the signal from the detector and another circuit to control the movement of four probes (4-points technique) by using a stepper motor and the micro stepping technique avoiding damage to the detector. This system can be of interest to researchers that work with a sort of semiconductor materials in the form of thin film and in nanotechnological processes aiming the design of radiation ionizing detectors. (author)

The HERMES dual-radiator ring imaging Cherenkov detector

CERN Document Server

Akopov, N; Bailey, K; Bernreuther, S; Bianchi, N; Capitani, G P; Carter, P; Cisbani, E; De Leo, R; De Sanctis, E; De Schepper, D; Dzhordzhadze, V; Filippone, B W; Frullani, S; Garibaldi, F; Hansen, J O; Hommez, B; Iodice, M; Jackson, H E; Jung, P; Kaiser, R; Kanesaka, J; Kowalczyk, R; Lagamba, L; Maas, A; Muccifora, V; Nappi, E; Negodaeva, K; Nowak, Wolf-Dieter; O'Connor, T; O'Neill, T G; Potterveld, D H; Ryckbosch, D; Sakemi, Y; Sato, F; Schwind, A; Shibata, T A; Suetsugu, K; Thomas, E; Tytgat, M; Urciuoli, G M; Van De Kerckhove, K; Van De Vyver, R; Yoneyama, S; Zhang, L F; Zohrabyan, H G

2002-01-01

The construction and use of a dual radiator Ring Imaging Cherenkov (RICH) detector is described. This instrument was developed for the HERMES experiment at DESY which emphasises measurements of semi-inclusive deep-inelastic scattering. It provides particle identification for pions, kaons, and protons in the momentum range from 2 to 15 GeV, which is essential to these studies. The instrument uses two radiators, C sub 4 F sub 1 sub 0 , a heavy fluorocarbon gas, and a wall of silica aerogel tiles. The use of aerogel in a RICH detector has only recently become possible with the development of clear, large, homogeneous and hydrophobic aerogel. A lightweight mirror was constructed using a newly perfected technique to make resin-coated carbon-fiber surfaces of optical quality. The photon detector consists of 1934 photomultiplier tubes (PMT) for each detector half, held in a soft steel matrix to provide shielding against the residual field of the main spectrometer magnet.

Method of producing p-i-n structures by compensation of lithium ions from both side of silicon

International Nuclear Information System (INIS)

Muminov, R.A.; Radjapov, S.A.; Saymbetov, A.K.; Tursunkulov, O.M.; Pindurin, Yu.S.

2007-01-01

Full text: Semiconductor nuclear radiation detectors are needed to solve certain problems in nuclear spectroscopy. The development of efficiency detectors became possible with advances in growing high purify silicon single crystals with the required properties, satisfying the requirements for obtaining detectors based on them. One important requirement for obtaining detectors with sensitive area is that its resistance must be high. This is achieved by using the lithium ion drift process in the volume of the semiconductor detector. Thus it has been developed and created silicon semiconductor nuclear radiation detectors with vide range of diameter of sensitive area up to 100 mm and thickness (from 1mm to 10mm). At present work a new method for producing p-i-n structures was developed to decrease substantially the time required for compensation of silicon by lithium ions and to eliminate at the same time the negative consequences of holding the crystal at a high temperature and under a high voltage. Drift of lithium ions from two ends of prepared samples is conducted to a depth sufficient for the required compensation of the initial acceptor impurity in silicon. The method described above was used to fabricate a batch of Si(Li) detectors with a 1-10 mm thick and 10-110 mm in diameter sensitive region. The thickness of the sensitive region was determined by performing standard measurements and chemical pigmentation. Advantages of detectors are they have improved properties and less time for compensation of lithium ions. (authors)

Gold-coated copper cone detector as a new standard detector for F2 laser radiation at 157 nm

International Nuclear Information System (INIS)

Kueck, Stefan; Brandt, Friedhelm; Taddeo, Mario

2005-01-01

A new standard detector for high-accuracy measurements of F2 laser radiation at 157 nm is presented. This gold-coated copper cone detector permits the measurement of average powers up to 2 W with an uncertainty of ∼1%. To the best of our knowledge, this is the first highly accurate standard detector for F2 laser radiation for this power level. It is fully characterized according to Guide to the Expression of Uncertainty in Measurement of the International Organization for Standardization and is connected to the calibration chain for laser radiation established by the German National Metrology Institute

Evaluation of a digital optical ionizing radiation particle track detector

International Nuclear Information System (INIS)

Hunter, S.R.

1987-06-01

An ionizing radiation particle track detector is outlined which can, in principle, determine the three-dimensional spatial distribution of all the secondary electrons produced by the passage of ionizing radiation through a low-pressure (0.1 to 10 kPa) gas. The electrons in the particle track are excited by the presence of a high-frequency AC electric field, and two digital cameras image the optical radiation produced in electronic excitation collisions of the surroundings gas by the electrons. The specific requirements of the detector for neutron dosimetry and microdosimetry are outlined (i.e., operating conditions of the digital cameras, high voltage fields, gas mixtures, etc.) along with an estimate of the resolution and sensitivity achievable with this technique. The proposed detector is shown to compare favorable with other methods for obtaining the details of the track structure, particularly in the quality of the information obtainable about the particle track and the comparative simplicity and adaptability of the detector for measuring the secondary electron track structure for many forms of ionizing radiation over a wide range of energies

Development of superconducting tunnel junction radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Katagiri, Masaki; Kishimoto, Maki; Ukibe, Masahiro; Nakamura, Tatsuya; Nakazawa, Masaharu [Japan Atomic Energy Research Inst., Tokyo (Japan); Kurakado, Masahiko; Ishibashi, Kenji; Maehata, Keisuke

1998-07-01

Study on development of high energy resolution X-ray detector using superconducting tunnel junction (STJ) for radiation detection was conducted for 5 years under cooperation of University of Tokyo group and Kyushu University group by Quantum measurement research group of Advanced fundamental research center of JAERI. As the energy resolution of STJ could be obtained better results than that of Si semiconductor detector told to be actually best at present, this study aimed to actualize an X-ray detector usable for the experimental field and to elucidate radiation detection mechanism due to STJ. The STJ element used for this study was the one developed by Kurakado group of Nippon Steel Corp. As a results, some technical problems were almost resolved, which made some trouble when using the STJ element to detection element of X-ray spectrometer. In order to make the X-ray detector better, it is essential to manufacture a STJ element and develop serial junction type STJ element on the base of optimization of the element structure and selection and single crystallization of new superconducting materials such as Ta and others, activating the research results. (G.K.)

Locating gamma radiation source by self collimating BGO detector system

Energy Technology Data Exchange (ETDEWEB)

Orion, I; Pernick, A; Ilzycer, D; Zafrir, H [Israel Atomic Energy Commission, Yavne (Israel). Soreq Nuclear Research Center; Shani, G [Ben-Gurion Univ. of the Negev, Beersheba (Israel)

1996-12-01

The need for airborne collimated gamma detector system to estimate the radiation released from a nuclear accident has been established. A BGO detector system has been developed as an array of separate seven cylindrical Bismuth Germanate scintillators, one central detector symmetrically surrounded by six detectors. In such an arrangement, each of the detectors reduced the exposure of other detectors in the array to a radiation incident from a possible specific spatial angle, around file array. This shielding property defined as `self-collimation`, differs the point source response function for each of the detectors. The BGO detector system has a high density and atomic number, and therefore provides efficient self-collimation. Using the response functions of the separate detectors enables locating point sources as well as the direction of a nuclear radioactive plume with satisfactory angular resolution, of about 10 degrees. The detector`s point source response, as function of the source direction, in a horizontal plane, has been predicted by analytical calculation, and was verified by Monte-Carlo simulation using the code EGS4. The detector`s response was tested in a laboratory-scale experiment for several gamma ray energies, and the experimental results validated the theoretical (analytical and Monte-Carlo) results. (authors).

Modern gas-avalanche radiation detectors: from innovations to applications

International Nuclear Information System (INIS)

2013-01-01

Micro-Pattern Gaseous Detectors (MPGD) technologies allow for the conception of advanced large area radiation detectors with unprecedented spatial resolutions and sensitivities, capable of operating under very high radiation flux. After more than two decades of extensive R and D carried by large number of groups worldwide, these detector technologies have reached high level of maturity. Nowadays, they are adapted as leading instruments for a growing number of applications in particle physics and in many other fields on basic and applied research. The growing interest in MPGD technologies and their mass-production capabilities naturally motivates further developments in the field. The state-of-the-art detector concepts and technologies have been introduced and their evolution, properties and current leading applications have been reviewed. Future potential applications as well as new technology challenges have been discussed

Multi-directional radiation detector using photographic film

International Nuclear Information System (INIS)

Junet, L K; Majid, Z A Abdul; Sapuan, A H; Sayed, I S; Pauzi, N F

2014-01-01

Ionising radiation has always been part of our surrounding and people are continuously exposed to it. Ionising radiation is harmful to human health, thus it is vital to monitor the radiation. To monitor radiation, there are three main points that should be observed cautiously, which are energy, quantity, and direction of the radiation sources. A three dimensional (3D) dosimeter is an example of a radiation detector that provide these three main points. This dosimeter is able to record the radiation dose distribution in 3D. Applying the concept of dose detection distribution, study has been done to design a multi-directional radiation detector of different filter thicknesses. This is obtained by designing a cylinder shaped aluminum filter with several layers of different thickness. Black and white photographic material is used as a radiation-sensitive material and a PVC material has been used as the enclosure. The device is then exposed to a radiation source with different exposure factors. For exposure factor 70 kVp, 16 mAs; the results have shown that optical density (OD) value at 135° is 1.86 higher compared with an OD value at 315° which is 0.71 as the 135° area received more radiation compare to 315° region. Furthermore, with an evidence of different angle of film give different value of OD shows that this device has a multidirectional ability. Materials used to develop this device are widely available in the market, thus reducing the cost of development and making it suitable for commercialisation

Mobile robot prototype detector of gamma radiation

International Nuclear Information System (INIS)

Vazquez C, R.M.; Duran V, M. D.; Jardon M, C. I.

2014-10-01

In this paper the technological development of a mobile robot prototype detector of gamma radiation is shown. This prototype has been developed for the purpose of algorithms implementation for the applications of terrestrial radiation monitoring of exposed sources, search for missing radioactive sources, identification and delineation of radioactive contamination areas and distribution maps generating of radioactive exposure. Mobile robot detector of radiation is an experimental technology development platform to operate in laboratory environment or flat floor facilities. The prototype integrates a driving section of differential configuration robot on wheels, a support mechanism and rotation of shielded detector, actuator controller cards, acquisition and processing of sensor data, detection algorithms programming and control actuators, data recording (Data Logger) and data transmission in wireless way. The robot in this first phase is remotely operated in wireless way with a range of approximately 150 m line of sight and can extend that range to 300 m or more with the use of signal repeaters. The gamma radiation detection is performed using a Geiger detector shielded. Scan detection is performed at various time sampling periods and diverse positions of discrete or continuous angular orientation on the horizon. The captured data are geographical coordinates of robot GPS (latitude and longitude), orientation angle of shield, counting by sampling time, date, hours, minutes and seconds. The data is saved in a file in the Micro Sd memory on the robot. They are also sent in wireless way by an X Bee card to a remote station that receives for their online monitoring on a laptop through an acquisition program by serial port on Mat Lab. Additionally a voice synthesizing card with a horn, both in the robot, periodically pronounced in Spanish, data length, latitude, orientation angle of shield and detected accounts. (Author)

Large arrays of discrete ionizing radiation detectors multiplexed using fluorescent optical converters

International Nuclear Information System (INIS)

Koslow, E.E.; Edelman, R.R.

1985-01-01

This invention provides a radiation imaging system employing arrays of scintillators. An object of the invention is to produce a detector with high spatial resolution, high gamma-photon absorption efficiency, excellent source and detector scatter rejection, and utilizing low-cost solid state opto-electronic devices. In one embodiment, it provides a radiation detection and conversion apparatus having an array of optically isolated radiation sensitive elements that emit optical radiation upon absorption of ionizing radiation. An array of channels, comprising a material that absorbs and traps the radiation emitted and transports it or radiation that has been shifted to longer wavelengths, is placed near the radiation-sensitive elements. Electro-optical detectors that convert the transported radiation into electrical signals are coupled to the channels. The activation of one of the electro-optical devices by radiation from one of the channels indicates that at least one of the radiation-sensitive elements near that channel has absorbed a quantity of radiation

Modeling of diamond radiation detectors

International Nuclear Information System (INIS)

Milazzo, L.; Mainwood, A.

2004-01-01

We have built up a computer simulation of the detection mechanism in the diamond radiation detectors. The diamond detectors can be fabricated from a chemical vapour deposition polycrystalline diamond film. In this case, the trapping-detrapping and recombination at the defects inside the grains and at the grain boundaries degrade the transport properties of the material and the charge induction processes. These effects may strongly influence the device's response. Previous simulations of this kind of phenomena in the diamond detectors have generally been restricted to the simple detector geometries and homogeneous distribution of the defects. In our model, the diamond film (diamond detector) is simulated by a grid. We apply a spatial and time discretization, regulated by the grid resolution, to the equations describing the charge transport and, by using the Shockley-Ramo theorem, we calculate the signal induced on the electrodes. In this way, we can simulate the effects of the nonhomogeneous distributions of the trapping, recombination, or scattering centers and can investigate the differences observed when different particles, energies, and electrode configurations are used. The simulation shows that the efficiency of the detector increases linearly with the average grain size, that the charge collection distance is small compared to the dimensions of a single grain, and that for small grains, the trapping at the intragrain defects is insignificant compared to the effect of the grain boundaries

Radiation Hazard Detector

Science.gov (United States)

1978-01-01

NASA technology has made commercially available a new, inexpensive, conveniently-carried device for protection, of people exposed to potentially dangerous levels of microwave radiation. Microwaves are radio emissions of extremely high frequency. They can be hazardous but the degree of hazard is not yet well understood. Generally, it is believed that low intensity radiation of short duration is not harmful but that exposure to high levels can induce deep internal burns, affecting the circulatory and nervous systems, and particularly the eyes. The Department of Labor's Occupational Safety and Health Administration (OSHA) has established an allowable safe threshold of exposure. However, people working near high intensity sources of microwave energy-for example, radar antennas and television transmitters-may be unknowingly exposed to radiation levels beyond the safe limit. This poses not only a personal safety problem but also a problem for employers in terms of productivity loss, workman's compensation claims and possible liability litigation. Earlier-developed monitoring devices which warn personnel of dangerous radiation levels have their shortcomings. They can be cumbersome and awkward to use while working. They also require continual visual monitoring to determine if a person is in a dangerous area of radiation, and they are relatively expensive, another deterrent to their widespread adoption. In response to the need for a cheaper and more effective warning system, Jet Propulsion Laboratory developed, under NASA auspices, a new, battery-powered Microwave Radiation Hazard Detector. To bring the product to the commercial market, California Institute Research Foundation, the patent holder, granted an exclusive license to Cicoil Corporation, Chatsworth, California, an electronic components manufacturer.

Improved spectrometric characteristics of thallium bromide nuclear radiation detectors

CERN Document Server

Hitomi, K; Shoji, T; Suehiro, T; Hiratate, Y

1999-01-01

Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap. In this study, nuclear radiation detectors have been fabricated from the TlBr crystals. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using the materials purified by many pass zone refining. The crystals were characterized by measuring the resistivity, the mobility-lifetime (mu tau) product and the energy required to create an electron-hole pair (the epsilon value). Improved energy resolution has been obtained by the TlBr radiation detectors. At room temperature the full-width at half-maximum (FWHM) for the 59.5, 122 and 662 keV gamma-ray photo peak obtained from the detectors were 3.3, 8.8 and 29.5 keV, respectively. By comparing the saturated peak position of the TlBr detector with that of the CdTe detector, the epsilon value has been estimated to be about 5.85 eV for the TlBr crystal.

Method and apparatus for logging a borehole employing dual radiation detectors

International Nuclear Information System (INIS)

Arnold, D.M.

1986-01-01

An apparatus is described for logging a characteristic of a borehole in an earth formation employing nuclear count rate data selectively compensated for non-standard borehole conditions, comprising: a sonde, movable in a borehole, having: a radiation source for emitting radiation into earth formations adjacent the wellbore; first detector, spaced longitudinally from the radiation source, for detecting radiation scattered back to the detector and generating a first signal representative of a first count rate value, C/sub SS/; and second detector spaced a different longitudinal distance from the radiation source, for detecting radiation scattered back to the detector and generating a second signal representative of a count rate value, C/sub LS/; memory means for storing a predetermined threshold value, first predetermined relationships between the borehole characteristic and count rate values C/sub LS/, C/sub SS/; and second predetermined relationships between the borehole characteristic and ratios of C/sub LS/ to C/sub SS/; electronic means for producing a signal related in value to the borehole characteristic, which electronic means compares at least one of the first and second count rate value signals with the predetermined threshold value; means for recording the signal generated by the electronic means

Calculation of the relative efficiency of thermoluminescent detectors to space radiation

International Nuclear Information System (INIS)

Bilski, P.

2011-01-01

Thermoluminescent (TL) detectors are often used for measurements of radiation doses in space. While space radiation is composed of a mixture of heavy charged particles, the relative TL efficiency depends on ionization density. The question therefore arises: what is the relative efficiency of TLDs to the radiation present in space? In the attempt to answer this question, the relative TL efficiency of two types of lithium fluoride detectors for space radiation has been calculated, based on the theoretical space spectra and the experimental values of TL efficiency to ion beams. The TL efficiency of LiF:Mg,Ti detectors for radiation encountered at typical low-Earth’s orbit was found to be close to unity, justifying a common application of these TLDs to space dosimetry. The TL efficiency of LiF:Mg,Cu,P detectors is significantly lower. It was found that a shielding may have a significant influence on the relative response of TLDs, due to changes caused in the radiation spectrum. In case of application of TLDs outside the Earth’s magnetosphere, one should expect lower relative efficiency than at the low-Earth’s orbit.

High energy radiation detector

International Nuclear Information System (INIS)

Vosburgh, K.G.

1975-01-01

The high energy radiation detector described comprises a set of closely spaced wedge reflectors. Each wedge reflector is composed of three sides forming identical isoceles triangles with a common apex and an open base forming an equilateral triangle. The length of one side of the base is less than the thickness of the coat of material sensitive to high energy radiation. The wedge reflectors reflect the light photons spreading to the rear of the coat in such a way that each reflected track is parallel to the incident track of the light photon spreading rearwards. The angle of the three isosceles triangles with a common apex is between 85 and 95 deg. The first main surface of the coat of high energy radiation sensitive material is in contact with the projecting edges of the surface of the wedge reflectors of the reflecting element [fr

Volume pinning force and upper critical field of irradiated Nb3Sn

International Nuclear Information System (INIS)

Maier, P.; Seibt, E.

1981-01-01

Irradiation by neutrons and ions in A15 superconductors (Nb 3 Sn, V 3 Ga) exerts a stronger influence on the pinning behavior than in nonordered alloys (NbTi). In this work it is shown for deuteron irradiated Nb 3 /Sn wires prepared by the bronze process that the dose curve of the volume pinning force P/sub V/ can be conveniently described by a sum of two terms, due to the grain boundary pinning and to the radiation pinning, respectively. After deduction of the contribution by the radiation-induced pinning centers, good agreement is obtained between the measured P/sub V/ values and those calculated using the upper critical field B/sub c/2 and the transition temperature T/sub c/ on the basis of the irradiation fluence. The use of a theoretical relationship between B/sub c/2 and T/sub c/ is supported by measured values. Application to multifilamentary superconductors with high current carrying capabilities simplifies the calculation of P/sub V/, since the radiation induced volume pinning force can be neglected

Simulation of Si P-i-N diodes for use in a positron emission tomography detector module

International Nuclear Information System (INIS)

Bailey, M.J.; University of Wollongong, NSW; Rosenfeld, A.; Lerch, M.; Taylor, G.; Heiser, G.

2000-01-01

Full text: Current Positron Emission Tomography (PET) systems consist of scintillation crystals optically coupled to photomultiplier tubes with associated electronics used to detect photons generated within the scintillator. The cost of photomultiplier tubes (PMTs) is considerable and is the major factor in the cost of PET systems. It has been suggested that Si P-i-N diodes can replace PMTs and provide Depth of Interaction (DOI) information for improved spatial resolution. Si P-i-N diodes of 25mm x 300μm and 3mm x 300μm cross sectional area were simulated using a 2D Monte Carlo program (PClD V5) from the UNSW photovoltics group. The diffusion lengths were varied from 0.5μm to 5μm and the charge collection characteristics of the diodes were observed. A 400nm monochromatic light source was used for the excitation as an approximation of the mean wavelength output from LSO crystal. The diodes were reverse biased with voltages 40V, 20V and 10V. The optimum diffusion length of up to 2μm and bias voltage of 40V were determined using the electric field, current density, carrier density and potential distribution results. These parameters will be used for the design of a device for optimal charge collection capabilities for the wavelengths encountered in PET applications. Further studies need to be conducted using spectra from LSO rather than a monochromatic source. The response of various Si P-i-N diodes to a monochromatic light source have been modeled in order to design a device for application in a PET detector module for DOI measurements. The charge collection within the first 2μm has been emphasized due to the strong absorption of photons from LSO near the surface.Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine

[Effects of ionizing radiation on scintillators and other particle detectors

International Nuclear Information System (INIS)

Proudfoot, J.

1992-01-01

It is my task to summarise the great variety of topics (covering a refreshing mix of physics, chemistry and technology) presented at this conference, which has focused on the effects of ionising radiation on scintillators and other particle detectors. One of the reasons and the central interest of many of the participants was the use of such detectors in experiments at two future large hadron colliders: the Superconducting Super Collider to be operating outside of Dallas in the United States by the turn of the decade and its European counterpart the Large Hadron Collider to be operating outside of Geneva in Switzerland on a similar time scale. These accelerators are the ''apple of the high energy physicist's eye.'' Their goal is to uncover the elusive Higgs particle and thereby set the cornerstone in our current knowledge of elementary particle interactions. This is the Quest, and from this lofty height the presentations rapidly moved on to the specific questions of experimental science: how such an experiment is carried out; why radiation damage is an issue; how radiation damage affects detectors; which factors affect radiation damage characteristics; which factors are not affected by radiation damage; and how better detectors may be constructed. These were the substance of this conference

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Nachman, Benjamin Philip; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of $10^{15}$ 1 MeV $n_\\mathrm{eq}/\\mathrm{cm}^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This talk presents a digitization model that includes radiation damage effects to the ATLAS Pixel sensors for the first time. After a thorough description of the setup, predictions for basic Pixel cluster properties are presented alongside first validation studies with Run 2 collision data.

Radiation detector

International Nuclear Information System (INIS)

Conrad, B.; Finkenzeller, J.; Kiiehn, G.; Lichtenberg, W.

1984-01-01

In an exemplary embodiment, a flat radiation beam is detected having a common electrode disposed parallel to the beam plane at one side and a common support with a series of individual conductors providing electrodes opposite successive portions of the common electrode and lying in a plane also parallel to the beam plane. The beam may be fan-shaped and the individual electrodes may be aligned with respective ray paths separated by uniform angular increments in the beam plane. The individual conductors and the connection thereof to the exterior of the detector housing may be formed on an insulator which can be folded into a T-shape for leading the supply conductors for alternate individual conductors toward terminals at opposite sides of the chamber

Alpha particle response study of polycrstalline diamond radiation detector

Energy Technology Data Exchange (ETDEWEB)

Kumar, Amit; Topkar, Anita [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)

2016-05-23

Chemical vapor deposition has opened the possibility to grow high purity synthetic diamond at relatively low cost. This has opened up uses of diamond based detectors for wide range of applications. These detectors are most suitable for harsh environments where standard semiconductor detectors cannot work. In this paper, we present the fabrication details and performance study of polycrystalline diamond based radiation detector. Effect of different operating parameters such as bias voltage and shaping time for charge collection on the performance of detector has been studied.

Online radiation dose measurement system for ATLAS experiment

International Nuclear Information System (INIS)

Mandic, I.; Cindro, V.; Dolenc, I.; Gorisek, A.; Kramberger, G.; Mikuz, M.; Bronner, J.; Hartet, J.; Franz, S.

2009-01-01

In experiments at Large Hadron Collider, detectors and electronics will be exposed to high fluxes of photons, charged particles and neutrons. Damage caused by the radiation will influence performance of detectors. It will therefore be important to continuously monitor the radiation dose in order to follow the level of degradation of detectors and electronics and to correctly predict future radiation damage. A system for online radiation monitoring using semiconductor radiation sensors at large number of locations has been installed in the ATLAS experiment. Ionizing dose in SiO 2 will be measured with RadFETs, displacement damage in silicon in units of 1-MeV(Si) equivalent neutron fluence with p-i-n diodes. At 14 monitoring locations where highest radiation levels are expected the fluence of thermal neutrons will be measured from current gain degradation in dedicated bipolar transistors. The design of the system and tests of its performance in mixed radiation field is described in this paper. First results from this test campaign confirm that doses can be measured with sufficient sensitivity (mGy for total ionizing dose measurements, 10 9 n/cm 2 for NIEL (non-ionizing energy loss) measurements, 10 12 n/cm 2 for thermal neutrons) and accuracy (about 20%) for usage in the ATLAS detector

Silicon-lithium nuclear radiation detectors. Kremnii-litievye detektory yadernogo izlucheniya

Energy Technology Data Exchange (ETDEWEB)

Azimov, S.A.; Muminov, R.A.; Shamirzaev, S.Kh.; Yafasov, A.Ya.

1981-01-01

A presentation is made of the physical principles underlying the design, building, and technology of silicon-lithium detectors and ways of improving them. Criteria of nuclear radiation control and selection and the connection between radiation and detector properties are discussed. A study is made of the effect that various defects have on the process of charge collection and formation of amplitude spectra during the recording of various types of particles. A detailed examination is made of the optimal technological systems for making detectors with high energy and time resolutions, and features of producing high-quality detectors which employ the use of ion-laser and other methods of modern semiconductor technology. 322 references, 102 figures, 2 tables.

Development of analog solid-state photo-detectors for Positron Emission Tomography

International Nuclear Information System (INIS)

Bisogni, Maria Giuseppina; Morrocchi, Matteo

2016-01-01

Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

Development of analog solid-state photo-detectors for Positron Emission Tomography

Energy Technology Data Exchange (ETDEWEB)

Bisogni, Maria Giuseppina, E-mail: giuseppina.bisogni@pi.infn.it; Morrocchi, Matteo

2016-02-11

Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

Characterization and calibration of radiation-damaged double-sided silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Kaya, L. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Vogt, A., E-mail: andreas.vogt@ikp.uni-koeln.de [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Reiter, P.; Birkenbach, B.; Hirsch, R.; Arnswald, K.; Hess, H.; Seidlitz, M.; Steinbach, T.; Warr, N.; Wolf, K. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Stahl, C.; Pietralla, N. [Institut für Kernphysik, Technische Universität Darmstadt, D-64291 Darmstadt (Germany); Limböck, T.; Meerholz, K. [Physikalische Chemie, Universität zu Köln, D-50939 Köln (Germany); Lutter, R. [Maier-Leibnitz-Laboratorium, Ludwig-Maximilians-Universität München, D-85748 Garching (Germany)

2017-05-21

Double-sided silicon strip detectors (DSSSD) are commonly used for event-by-event identification of charged particles as well as the reconstruction of particle trajectories in nuclear physics experiments with stable and radioactive beams. Intersecting areas of both p- and n-doped front- and back-side segments form individual virtual pixel segments allowing for a high detector granularity. DSSSDs are employed in demanding experimental environments and have to withstand high count rates of impinging nuclei. The illumination of the detector is often not homogeneous. Consequently, radiation damage of the detector is distributed non-uniformly. Position-dependent incomplete charge collection due to radiation damage limits the performance and lifetime of the detectors, the response of different channels may vary drastically. Position-resolved charge-collection losses between front- and back-side segments are investigated in an in-beam experiment and by performing radioactive source measurements. A novel position-resolved calibration method based on mutual consistency of p-side and n-side charges yields a significant enhancement of the energy resolution and the performance of radiation-damaged parts of the detector.

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

International Nuclear Information System (INIS)

Perez-Mendez, V.; Drewery, J.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.

1994-10-01

We describe the characteristics of thin (1 μm) and thick (>30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed

Search for Physics beyond the Standard Model with the ATLAS detector and the development of radiation detectors

CERN Document Server

Silver, Yiftah

We are investigating a radiation detector based on plasma display panel technology, the principal component of plasma television displays. This Plasma Panel Sensor (PPS) technology is a variant of micro-pattern gas radiation detectors. Based on the properties of existing plasma display panels, we expect eventually to be able to build a sealed array of plasma discharge gas cells to detect ionizing radiation with fast rise time of less than 10ns and high spatial resolution using a pixel pitch of less than 100 micrometer. In this thesis I shall describe our program of testing plasma display panels as detectors, including simulations, design and the first laboratory and beam studies that demonstrate the detection of cosmic ray muons, beta rays and medium energy protons. The ATLAS detector is used to search for high-mass resonances, in particular heavy neutral gauge bosons (Z') and excited states of Kaluza-Klein γ/Z bosons decaying to an electron-positron pair or a muon-antimuon pair. Results are presented based ...

New detectors of neutron, gamma- and X-radiations

CERN Document Server

Lobanov, N S

2002-01-01

Paper presents new detectors to record absorbed doses of neutron, gamma- and X-ray radiations within 0-1500 Mrad range. DBF dosimeter is based on dibutyl phthalate. EDS dosimeter is based on epoxy (epoxide) resin, while SD 5-40 detector is based on a mixture of dibutyl phthalate and epoxy resin. Paper describes experimental techniques to calibrate and interprets the measurement results of absorbed doses for all detectors. All three detectors cover 0-30000 Mrad measured does range. The accuracy of measurements is +- 10% independent (practically) of irradiation dose rates within 20-2000 rad/s limits under 20-80 deg C temperature

The role of contacts in semiconductor gamma radiation detectors

International Nuclear Information System (INIS)

Lachish, U.

1998-01-01

It is proposed that the operation of semiconductor gamma radiation detectors, equipped with ohmic contacts, which allow free electron flow between the contacts and bulk material, will not be sensitive to low hole mobility, hole collection efficiency, or hole trapping. Such fast-operating detectors may be readily integrated into monolithic arrays. The detection mechanism and various material aspects are discussed and compared to those of blocking contact detectors. Some suggestions for detector realization are presented. (orig.)

A gas pixel detector for X-ray imaging

International Nuclear Information System (INIS)

Bateman, J.E.; Connolly, J.F.

1991-11-01

A simple, robust form of gas pixel detector is discussed which is based on the use of electronic connector pins as the gain elements. With a rate capability of >10 5 counts/s per pin, an X-ray imaging detector system capable of counting at global rates of the order of 10 10 counts/s is foreseen. (author)

Monitoring the Radiation Damage of the ATLAS Pixel Detector

CERN Document Server

Cooke, M; The ATLAS collaboration

2012-01-01

The Pixel Detector is the innermost charged particle tracking component employed by the ATLAS experiment at the CERN Large Hadron Collider (LHC). The instantaneous luminosity delivered by the LHC, now routinely in excess of 5x10^{33} cm^{-2} s^{-1}, results in a rapidly increasing accumulated radiation dose to the detector. Methods based on the sensor depletion properties and leakage current are used to monitor the evolution of the radiation damage, and results from the 2011 run are presented.

Monitoring the radiation damage of the ATLAS pixel detector

International Nuclear Information System (INIS)

Cooke, M.

2013-01-01

The pixel detector is the innermost charged particle tracking component employed by the ATLAS experiment at the CERN Large Hadron Collider (LHC). The instantaneous luminosity delivered by the LHC, now routinely in excess of 5×10 33 cm −2 s −1 , results in a rapidly increasing accumulated radiation dose to the detector. Methods based on the sensor depletion properties and leakage current are used to monitor the evolution of the radiation damage, and results from the 2011 run are presented

Radiation Damage Modeling for 3D Pixel Sensors in the ATLAS Detector

CERN Document Server

Wallangen, Veronica; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This poster presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS Detector.

Development of a semiconductor neutron dosimeter with a PIN diode

International Nuclear Information System (INIS)

Kim, Seungho; Lee, Namho; Cho, Jaiwan; Youk, Geunuck

2004-01-01

When a Si PIN diode is exposed to fast neutrons, it produces displacement in Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed, and multi PIN diode arrays with various intrinsic layer (I layer) thicknesses and cross sections were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have good characteristics of linearity in a neutron irradiation experiment and give results that the increase of thickness of I layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a thicker I layer and various cross sections were retested and showed the best neutron sensitivity in the condition that the I layer thickness was similar to the length of a side of the cross-section. On the basis of two test results, final PIN diodes with a rectangular shape were manufactured and the characteristics for neutron detectors were analyzed through the neutron beam test using the on-line electronic dosimetry system. The developed PIN diode shows a good linearity to absorbed dose in the range of 0 to 1,000cGy (Tissue) and its neutron sensitivity is 13 mV/cGy at a constant current of 5 mA, that is three higher than that of similar commercially developed neutron detectors. Moreover the device shows less dependency on the orientation of the neutron beam and a considerable stability in an annealing test for a long period. (author)

Field oxide radiation damage measurements in silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland); Singh, P; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

1993-04-01

Surface radiation damage in planar processed silicon detectors is caused by radiation generated holes being trapped in the silicon dioxide layers on the detector wafer. We have studied charge trapping in thick (field) oxide layers on detector wafers by irradiating FOXFET biased strip detectors and MOS test capacitors. Special emphasis was put on studying how a negative bias voltage across the oxide during irradiation affects hole trapping. In addition to FOXFET biased detectors, negatively biased field oxide layers may exist on the n-side of double-sided strip detectors with field plate based n-strip separation. The results indicate that charge trapping occurred both close to the Si-SiO[sub 2] interface and in the bulk of the oxide. The charge trapped in the bulk was found to modify the electric field in the oxide in a way that leads to saturation in the amount of charge trapped in the bulk when the flatband/threshold voltage shift equals the voltage applied over the oxide during irradiation. After irradiation only charge trapped close to the interface is annealed by electrons tunneling to the oxide from the n-type bulk. (orig.).

Diamond detectors for synchrotron radiation X-ray applications

Energy Technology Data Exchange (ETDEWEB)

De Sio, A. [Laboratori Nazionali di Frascati, INFN, 00044 Frascati, Roma (Italy); Department of Astronomy and Space Science, Universita di Firenze, L.go E. Fermi 2, 50125 Firenze (Italy)], E-mail: desio@arcetri.astro.it; Pace, E. [Department of Astronomy and Space Science, Universita di Firenze, L.go E. Fermi 2, 50125 Firenze (Italy); INFN, Sezione di Firenze, v. G. Sansone 1, Sesto Fiorentino, Firenze (Italy); Cinque, G.; Marcelli, A. [Laboratori Nazionali di Frascati, INFN, 00044 Frascati, Roma (Italy); Achard, J.; Tallaire, A. [LIMHP-CNRS, University of Paris XIII, 99 Avenue JB Clement, 93430 Villetaneuse (France)

2007-07-15

Due to its unique physical properties, diamond is a very appealing material for the development of electronic devices and sensors. Its wide band gap (5.5 eV) endows diamond based devices with low thermal noise, low dark current levels and, in the case of radiation detectors, high visible-to-X-ray signal discrimination (visible blindness) as well as high sensitivity to energies greater than the band gap. Furthermore, due to its radiation hardness diamond is very interesting for applications in extreme environments, or as monitor of high fluency radiation beams. In this work the use of diamond based detectors for X-ray sensing is discussed. On purpose, some photo-conductors based on different diamond types have been tested at the DAFNE-L synchrotron radiation laboratory at Frascati. X-ray sensitivity spectra, linearity and stability of the response of these diamond devices have been measured in order to evidence the promising performance of such devices.

Diamond detectors for synchrotron radiation X-ray applications

International Nuclear Information System (INIS)

De Sio, A.; Pace, E.; Cinque, G.; Marcelli, A.; Achard, J.; Tallaire, A.

2007-01-01

Due to its unique physical properties, diamond is a very appealing material for the development of electronic devices and sensors. Its wide band gap (5.5 eV) endows diamond based devices with low thermal noise, low dark current levels and, in the case of radiation detectors, high visible-to-X-ray signal discrimination (visible blindness) as well as high sensitivity to energies greater than the band gap. Furthermore, due to its radiation hardness diamond is very interesting for applications in extreme environments, or as monitor of high fluency radiation beams. In this work the use of diamond based detectors for X-ray sensing is discussed. On purpose, some photo-conductors based on different diamond types have been tested at the DAFNE-L synchrotron radiation laboratory at Frascati. X-ray sensitivity spectra, linearity and stability of the response of these diamond devices have been measured in order to evidence the promising performance of such devices

Active microphonic noise cancellation in radiation detectors

International Nuclear Information System (INIS)

Zimmermann, Sergio

2013-01-01

A new adaptive filtering technique to reduce microphonic noise in radiation detectors is presented. The technique is based on system identification that actively cancels the microphonic noise. A sensor is used to measures mechanical disturbances that cause vibration on the detector assembly, and the digital adaptive filtering estimates the impact of these disturbances on the microphonic noise. The noise then can be subtracted from the actual detector measurement. In this paper the technique is presented and simulations are used to support this approach. -- Highlights: •A sensor is used to measures mechanical disturbances that cause vibration on the detector assembly. •Digital adaptive filtering estimates the impact of these disturbances on the microphonic noise. •The noise is then subtracted from the actual detector measurement. •We use simulations to demonstrate the performance of this approach. •After cancellation, we recover most of the original energy resolution

Application of a-Si:H radiation detectors in medical imaging

International Nuclear Information System (INIS)

Lee, Hyoung-Koo.

1995-06-01

Monte Carlo simulations of a proposed a-Si:H-based current-integrating gamma camera were performed. The analysis showed that the intrinsic resolution of such a camera was 1 ∼ 2.5 mm, which is somewhat better than that of a conventional gamma camera, and that the greater blurring, due to the detection of scattered γ-rays, could be reduced considerably by image restoration techniques. This proposed gamma camera would be useful for imaging shallow organs such as the thyroid. Prototype charge-storage a-Si:H pixel detectors for such a camera were designed, constructed and tested. The detectors could store signal charge as long as 5 min at -26C. The thermal generation current in reverse biased a-Si:H p-i-n photodetectors was investigated, and the Poole-Frenkel effect was found to be the most significant source of the thermal generation current. Based on the Poole-Frenkel effect, voltage- and time-dependent thermal generation current was modeled. Using the model, the operating conditions of the proposed a-Si:H gamma camera, such as the operating temperature, the operating bias and the γ-scan period, could be predicted. The transient photoconductive gain mechanism in various a-Si:H devices was investigated for applications in digital radiography. Using the a-Si:H photoconductors in n-i-n configuration in pixel arrays, enhancement in signal collection (more than 200 times higher signal level) can be achieved in digital radiography, compared to the ordinary p-i-n type a-Si:H x-ray imaging arrays

Radiation damage measurements on CZT drift strip detectors

DEFF Research Database (Denmark)

Kuvvetli, Irfan; Budtz-Jørgensen, Carl; Korsbech, Uffe C C

2003-01-01

from 2 x 10(8) to 60 x 10(8) p(+)/cm(2). Even for the highest fluences, which had a dramatic effect on the spectroscopic performance, we were able to recover the detectors after an appropriate annealing procedure. The radiation damage was studied as a function of depth inside the detector material...... with the proton dose. The radiation contribution to the electron trapping was found to obey the following relation: (mutau(e)(-1))(rad) = (2.5+/-0.2) x 10(-7) x Phi (V/cm)(2) with the proton fluence, Phi in p(+)/cm(2). The trapping depth dependence, however, did not agree well with the damage profile calculated...

Methods for radiation detection and characterization using a multiple detector probe

Science.gov (United States)

Akers, Douglas William; Roybal, Lyle Gene

2014-11-04

Apparatuses, methods, and systems relating to radiological characterization of environments are disclosed. Multi-detector probes with a plurality of detectors in a common housing may be used to substantially concurrently detect a plurality of different radiation activities and types. Multiple multi-detector probes may be used in a down-hole environment to substantially concurrently detect radioactive activity and contents of a buried waste container. Software may process, analyze, and integrate the data from the different multi-detector probes and the different detector types therein to provide source location and integrated analysis as to the source types and activity in the measured environment. Further, the integrated data may be used to compensate for differential density effects and the effects of radiation shielding materials within the volume being measured.

The transition radiation detector of the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Bergmann, Cyrano [Institut fuer Kernphysik, WWU Muenster (Germany)

2016-07-01

The Compressed Baryonic Matter (CBM) experiment is a fixed target heavy-ion experiment at the future FAIR accelerator facility. The CBM Transition Radiation Detector (TRD) is one of the key detectors to provide electron identification above momenta of 1 GeV/c and charged particle tracking. Due its capability to identify charged particles via their specific energy loss, the TRD in addition will provide valuable information for the measurement of fragments. These requirements can be fulfilled with a XeCO{sub 2} based Multi-Wire Proportional Counter (MWPC) detector in combination with an adequate radiator. The default MWPC is composed of a symmetric amplification area of 7 mm thickness, followed by a 5 mm drift region to enhance the TR-photon absorption probability in the active gas volume. This geometry provides also efficient and fast signal creation, as well as read-out, of the order of 200 μs per charged particle track. The performance of this detector is maximized by reducing the material budget between the radiator and gas volume to a minimum. The full detector at SIS100 will be composed of 200 modules in 2 sizes. To limit cost and production time the number of various module types is limited to 6 types and 4 types of Front End Board (FEB) flavors are required. An overview of the design and performance of the TRD detector is given.

The AMS-02 transition radiation detector

CERN Document Server

Kirn, Th

2004-01-01

The Alpha Magnetic Spectrometer AMS02 will be equipped with a large transition radiation detector (TRD) to achieve a proton background suppression necessary for dark matter searches. The AMS02 TRD consists of 20 layers of fleece radiator each with Xe/CO//2 proportional wire straw tubes read out by a dedicated low-power data- acquisition system. A space-qualified TRD design will be presented. The performance of a 20-layer prototype was tested at CERN with electron, myon and pion beams up to l00 GeV and with protons up to 250 GeV. The beam-test results will be compared to Geant3 MC predictions. The detector is under construction at RWTH Aachen; the gas system will be built at MIT, slow-control at MIT and INFN Rome and DAQ at TH Karlsruhe. This project is funded by the German Space Agency DLR, the US Department of Energy DOE and NASA.

Portable radiation detector and mapping system

International Nuclear Information System (INIS)

Hofstetter, K.J.; Hayes, D.W.; Eakle, R.F.

1995-01-01

A portable radiation detector and mapping system (RADMAPS) has been developed to detect, locate and plot nuclear radiation intensities on commercially available digital maps and other images. The field unit records gamma-ray spectra or neutron signals together with positions from a Global Positioning System (GPS) on flash memory cards. The recorded information is then transferred to a lap-top computer for spectral data analyses and then georegistered graphically on maps, photographs, etc. RADMAPS integrates several existing technologies to produce a preprogrammable field unit uniquely suited for each survey, as required. The system presently records spectra from a Nal(Tl) gamma-ray detector or an enriched Li-6 doped glass neutron scintillator. Standard Geographic Information System software installed in a lap-top, complete with CD-ROM supporting digitally imaged maps, permits the characterization of nuclear material in the field when the presence of such material is not otherwise documented. This paper gives the results of a typical site survey of the Savannah River Site (SRS) using RADMAPS

Electromechanically cooled germanium radiation detector system

International Nuclear Information System (INIS)

Lavietes, Anthony D.; Joseph Mauger, G.; Anderson, Eric H.

1999-01-01

We have successfully developed and fielded an electromechanically cooled germanium radiation detector (EMC-HPGe) at Lawrence Livermore National Laboratory (LLNL). This detector system was designed to provide optimum energy resolution, long lifetime, and extremely reliable operation for unattended and portable applications. For most analytical applications, high purity germanium (HPGe) detectors are the standard detectors of choice, providing an unsurpassed combination of high energy resolution performance and exceptional detection efficiency. Logistical difficulties associated with providing the required liquid nitrogen (LN) for cooling is the primary reason that these systems are found mainly in laboratories. The EMC-HPGe detector system described in this paper successfully provides HPGe detector performance in a portable instrument that allows for isotopic analysis in the field. It incorporates a unique active vibration control system that allows the use of a Sunpower Stirling cycle cryocooler unit without significant spectral degradation from microphonics. All standard isotopic analysis codes, including MGA and MGA++, GAMANL, GRPANL and MGAU, typically used with HPGe detectors can be used with this system with excellent results. Several national and international Safeguards organisations including the International Atomic Energy Agency (IAEA) and U.S. Department of Energy (DOE) have expressed interest in this system. The detector was combined with custom software and demonstrated as a rapid Field Radiometric Identification System (FRIS) for the U.S. Customs Service . The European Communities' Safeguards Directorate (EURATOM) is field-testing the first Safeguards prototype in their applications. The EMC-HPGe detector system design, recent applications, and results will be highlighted

A radiation detector fabricated from silicon photodiode.

Science.gov (United States)

Yamamoto, H; Hatakeyama, S; Norimura, T; Tsuchiya, T

1984-12-01

A silicon photodiode is converted to a low energy charged particle radiation detector. The window thickness of the fabricated detector is evaluated to be 50 micrograms/cm2. The area of the depletion region is 13.2 mm2 and the depth of it is estimated to be about 100 microns. The energy resolution (FWHM) is 14.5 ke V for alpha-particles from 241Am and 2.5 ke V for conversion electrons from 109Cd, respectively.

The use of detectors based on ionisation recombination in radiation protection

International Nuclear Information System (INIS)

Sullivan, A.H.

1984-01-01

Intitial recombination of ionisation in a gas depends on the ionisation density and hence on the linear energy transfer along the tracks of charged particles. This effect can be used as a basis for instruments that respond to different types of ionising radiation approximately in the way required by the quality factor-linear energy transfer relation recommended by the ICRP for use in radiation protection. Empirical instruments based on ionisation recombination that have been used for radiation protection measurements are reviewed, and relations are derived from recombination theory that show that the response of such detectors can be readily predicted. The usefulness of recombination instruments in radiation protection is discussed and their advantages and limitations assessed. It is shown that their main application will be as reference instruments against which other detectors can be calibrated. As an extension to using recombination detectors as reference instruments, the feasibility of specifying radiation quality in terms of ionisation recombination is investigated. (author)

Assembly of gamma radiation detection with directivity properties

International Nuclear Information System (INIS)

Stoica, M.; Talpalariu, C.

2016-01-01

An assembly of gamma radiation detection with directivity properties and small size enables the development of portable equipment or robots specialized in finding and signaling radioactively contaminated areas in case of nuclear incidents or decommissioning of nuclear installations. Directivity characteristic of the assembly of gamma radiation detection is very important when aiming to build an equipment for searching radioactively contaminated areas. In order to obtain a suitable directivity characteristics in terms of detection of gamma rays, it was necessary to construct a lead collimator with a cylindrical shape. The detector, preamplifier and amplifier pulse were placed inside the collimator and pulse discriminator circuit and power source were placed beside the collimator, all being disposed within the housing cylindrical experimental. A PIN photodiode type was used as a detector of gamma radiation. (authors)

Characterization of a radiation detector for aircraft measurements

International Nuclear Information System (INIS)

Holanda M, L. de; Federico, C. A.; Caldas, L. V. E.

2014-08-01

Air crews, as pilots and flight attendants, are subjected to cosmic ray doses which can be higher than the average doses on workers from the nuclear industry. The diversity of particles of high energies present in the radiation field on board of air crafts turns the determination of the incident dose difficult, and requires special care regarding dosimetric systems to be used in this kind of radiation field. The Brazilian Air Force, through its Institute for Advanced Studies (Instituto de Estudos Avancados, IEAv/DCTA) in conjunction with the Institute of Energetic and Nuclear Research (Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP) are working on this subject since 2008. A prototype of a radiation detector for aircraft measurements was previously built and tested in flight and laboratory conditions. The detector is able of measuring a quantity known as absorbed dose (using passive dosimeters), which will subsequently be correlated to the ambient dose equivalent and the effective dose received by air crews. In this context, a theoretical approach through Monte Carlo simulations with the computational codes MCNP5 and MCNPX was used to model and characterize the detector response at such experimental conditions. This work presents the preliminary results of the computational modeling, with special emphasis on the comparison between the absorbed doses measured and simulated, and its relationship with the ambient dose equivalent and the effective dose for this detector. (author)

Characterization of a radiation detector for aircraft measurements

Energy Technology Data Exchange (ETDEWEB)

Holanda M, L. de; Federico, C. A.; Caldas, L. V. E., E-mail: lcaldas@ipen.br [Instituto de Pesquisas Energeticas e Nucleares, Av. Lineu Prestes 2242, Cidade Universitaria, CEP 05508-000, Sao Paulo (Brazil)

2014-08-15

Air crews, as pilots and flight attendants, are subjected to cosmic ray doses which can be higher than the average doses on workers from the nuclear industry. The diversity of particles of high energies present in the radiation field on board of air crafts turns the determination of the incident dose difficult, and requires special care regarding dosimetric systems to be used in this kind of radiation field. The Brazilian Air Force, through its Institute for Advanced Studies (Instituto de Estudos Avancados, IEAv/DCTA) in conjunction with the Institute of Energetic and Nuclear Research (Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP) are working on this subject since 2008. A prototype of a radiation detector for aircraft measurements was previously built and tested in flight and laboratory conditions. The detector is able of measuring a quantity known as absorbed dose (using passive dosimeters), which will subsequently be correlated to the ambient dose equivalent and the effective dose received by air crews. In this context, a theoretical approach through Monte Carlo simulations with the computational codes MCNP5 and MCNPX was used to model and characterize the detector response at such experimental conditions. This work presents the preliminary results of the computational modeling, with special emphasis on the comparison between the absorbed doses measured and simulated, and its relationship with the ambient dose equivalent and the effective dose for this detector. (author)

Studying radiative B decays with the Atlas detector

International Nuclear Information System (INIS)

Viret, S.

2004-09-01

This thesis is dedicated to the study of radiative B decays with the ATLAS detector at the LHC (large hadron collider). Radiative decays belong to the rare decays family. Rare decays transitions involve flavor changing neutral currents (for example b → sγ), which are forbidden at the lowest order in the Standard Model. Therefore these processes occur only at the next order, thus involving penguin or box diagrams, which are very sensitive to 'new physics' contributions. The main goal of our study is to show that it would be possible to develop an online selection strategy for radiative B decays with the ATLAS detector. To this end, we have studied the treatment of low energy photons by the ATLAS electromagnetic calorimeter (ECal). Our analysis shows that ATLAS ECal will be efficient with these particles. This property is extensively used in the next section, where a selection strategy for radiative B decays is proposed. Indeed, we look for a low energy region of interest in the ECal as soon as the level 1 of the trigger. Then, photon identification cuts are performed in this region at level 2. However, a large part of the proposed selection scheme is also based on the inner detector, particularly at level 2. The final results show that large amounts of signal events could be collected in only one year by ATLAS. A preliminary significance (S/√B) estimation is also presented. Encouraging results concerning the observability of exclusive radiative B decays are obtained. (author)

Single-flux-quantum circuit technology for superconducting radiation detectors

International Nuclear Information System (INIS)

Fujimaki, Akira; Onogi, Masashi; Matsumoto, Tomohiro; Tanaka, Masamitsu; Sekiya, Akito; Hayakawa, Hisao; Yorozu, Shinichi; Terai, Hirotaka; Yoshikawa, Nobuyuki

2003-01-01

We discuss the application of the single-flux-quantum (SFQ) logic circuits to multi superconducting radiation detectors system. The SFQ-based analog-to-digital converters (ADCs) have the advantage in current sensitivity, which can reach less than 10 nA in a well-tuned ADC. We have also developed the design technology of the SFQ circuits. We demonstrate high-speed operation of large-scale integrated circuits such as a 2x2 cross/bar switch, arithmetic logic unit, indicating that our present SFQ technology is applicable to the multi radiation detectors system. (author)

Dosimetric evaluation of semiconductor detectors for application in neutron dosimetry and microdosimetry in nuclear reactor and radiosurgical facilities

International Nuclear Information System (INIS)

Cardenas, Jose Patricio Nahuel

2010-01-01

The main objective of this research is the dosimetric evaluation of semiconductor components (surface barrier detectors and PIN photodiodes) for applications in dose equivalent measurements on low dose fields (fast and thermal fluxes) using an AmBe neutron source, the IEA-R1 reactor neutrongraphy facility (epithermal and thermal fluxes) and the Critical Unit facility IPEN/MB-01 (fast fluxes). As moderator compound to fast neutrons flux from the AmBe source was used paraffin and boron and polyethylene as converter for thermal and fast neutrons measurements. The resulting fluxes were used to the irradiation of semiconductor components (SSB - Surface Barrier Detector and PIN photodiodes). A mixed converter made of a borated polyethylene foil (Kodak) was also used. Monte Carlo simulation methodology was employed to evaluate analytically the optimal paraffin thickness. The obtained results were similar to the experimental data and allowed the evaluation of emerging neutron flux from moderator, as well as the fast neutron flux reaching the polyethylene covering the semiconductor sensitive surface. Gamma radiation levels were evaluated covering the whole detector with cadmium foil 1 mm thick, allowing thermal neutrons blockage and gamma radiation measurements. The IPEN/MB-01 facility was employed to evaluate the detector response for high neutron flux. The results were in good agreement with other studies published. Using the obtained spectra an approach to dose equivalent calculation was established. (author)

Application of solid state nuclear track detectors in radiation protection

International Nuclear Information System (INIS)

Ramachandran, T.V.; Subba Ramu, M.C.; Mishra, U.C.

1989-01-01

This article reviews the current status of the application of nuclear track detectors with emphasis on recent developments in the field of radiation protection. Track etch detectors have been used for the measurements of low level radiation in the environment, fast neutron and radon daughter inhalation dose. Recent developments in the field of dosimetry seem to be promising. In fast neutron dosimetry, track etch detectors can be used without inclusion of fissile materials by using the electrochemical etching technique. These detectors can provide important information in the energy range upto 250 keV. Survey of this range of energy with TLD is difficult because they are extremely energy dependent and over-respond to low energy neutrons. Measurement of radon using track detectors can help to lower the cost of the radon dosimeters. Certain detectors are sensitive to alpha particles from radon and their progeny. Higher sensitivity permits their use in a passive type of personnel dosimeter, which does not require the troublesome aspects of air sampling for the collection of radon daughter samples. (author), 38 refs., 8 tabs., 12 figs

Radiation detectors as surveillance monitors for IAEA safeguards

International Nuclear Information System (INIS)

Fehlau, P.E.; Dowdy, E.J.

1980-10-01

Radiation detectors used for personnel dosimetry are examined for use under IAEA Safeguards as monitors to confirm the passage or nonpassage (YES/NO) of plutonium-bearing nuclear material at barrier penetrations declared closed. In this application where backgrounds are ill defined, no advantage is found for a particular detector type because of intrinsic efficiency. Secondary considerations such as complexity, ease of tamper-proofing, and ease of readout are used to recommend specific detector types for routine monitoring and for data-base measurements. Recommendations are made for applications, data acquisition, and instrument development

Radiation detectors as surveillance monitors for IAEA safeguards

Energy Technology Data Exchange (ETDEWEB)

Fehlau, P.E.; Dowdy, E.J.

1980-10-01

Radiation detectors used for personnel dosimetry are examined for use under IAEA Safeguards as monitors to confirm the passage or nonpassage (YES/NO) of plutonium-bearing nuclear material at barrier penetrations declared closed. In this application where backgrounds are ill defined, no advantage is found for a particular detector type because of intrinsic efficiency. Secondary considerations such as complexity, ease of tamper-proofing, and ease of readout are used to recommend specific detector types for routine monitoring and for data-base measurements. Recommendations are made for applications, data acquisition, and instrument development.

Thick and large area PIN diodes for hard X-ray astronomy

CERN Document Server

Ota, N; Sugizaki, M; Kaneda, M; Tamura, T; Ozawa, H; Kamae, T; Makishima, K; Takahashi, T; Tashiro, M; Fukazawa, Y; Kataoka, J; Yamaoka, K; Kubo, S; Tanihata, C; Uchiyama, Y; Matsuzaki, K; Iyomoto, N; Kokubun, M; Nakazawa, T; Kubota, A; Mizuno, T; Matsumoto, Y; Isobe, N; Terada, Y; Sugiho, M; Onishi, T; Kubo, H; Ikeda, H; Nomachi, M; Ohsugi, T; Muramatsu, M; Akahori, H

1999-01-01

Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm sup 2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors

International Nuclear Information System (INIS)

Goiffon, V.; Virmontois, C.; Magnan, P.; Cervantes, P.; Place, S.; Estribeau, M.; Martin-Gonthier, P.; Gaillardin, M.; Girard, S.; Paillet, P.

2012-01-01

This paper presents an investigation of Total Ionizing Dose (TID) induced dark current sources in Pinned Photodiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral shallow trench isolation does not seem to play a role in the degradation. The PPD area and a transfer gate contribution independent of the pixel dimensions appear to be the main sources of the TID induced dark current increase. This study also demonstrates that applying a negative voltage on the transfer gate during integration strongly reduces the radiation induced dark current. (authors)

175th International School of Physics "Enrico Fermi" : Radiation and Particle Detectors

CERN Document Server

Bottigli, U; Oliva, P

2010-01-01

High energy physics (HEP) has a crucial role in the context of fundamental physics. HEP experiments make use of a massive array of sophisticated detectors to analyze the particles produced in high-energy scattering events. This book contains the papers from the workshop 'Radiation and Particle Detectors', organized by the International School of Physics, and held in Varenna in July 2009. Its subject is the use of detectors for research in fundamental physics, astro-particle physics and applied physics. Subjects covered include the measurement of: the position and length of ionization trails, time of flight velocity, radius of curvature after bending the paths of charged particles with magnetic fields, coherent transition radiation, synchrotron radiation, electro-magnetic showers produced by calorimetric methods and nuclear cascades produced by hadrons in massive steel detectors using calorimetry. Detecting muons and the detection of Cherenkov radiation are also covered, as is the detection of neutrinos by ste...

Review of the Radiation Environment in the Inner Detector

CERN Document Server

Dawson, I

2000-01-01

The radiation environment in the inner detector has been simulated using the particle transport program FLUKA with a recent description of the ATLAS experiment. Given in this note are particle fluences and doses at positions relevant to the PIXEL, SCT and TRT detectors. In addition, studies are reported on in which 1) information concerning the optimisation of the inner detector neutron-moderators is obtained and 2) the impact of including additional vacuum-equipment is assessed.

Online radiation dose measurement system for ATLAS experiment

Energy Technology Data Exchange (ETDEWEB)

Mandic, I.; Cindro, V.; Dolenc, I.; Gorisek, A.; Kramberger, G. [Jozef Stefan Institute, Jamova 39, Ljubljana (Slovenia); Mikuz, M. [Jozef Stefan Institute, Jamova 39, Ljubljana (Slovenia); Faculty of Mathematics and Physics, University of Ljubljana (Slovenia); Bronner, J.; Hartet, J. [Physikalisches Institut, Universitat Freiburg, Hermann-Herder-Str. 3, Freiburg (Germany); Franz, S. [CERN, Geneva (Switzerland)

2009-07-01

In experiments at Large Hadron Collider, detectors and electronics will be exposed to high fluxes of photons, charged particles and neutrons. Damage caused by the radiation will influence performance of detectors. It will therefore be important to continuously monitor the radiation dose in order to follow the level of degradation of detectors and electronics and to correctly predict future radiation damage. A system for online radiation monitoring using semiconductor radiation sensors at large number of locations has been installed in the ATLAS experiment. Ionizing dose in SiO{sub 2} will be measured with RadFETs, displacement damage in silicon in units of 1-MeV(Si) equivalent neutron fluence with p-i-n diodes. At 14 monitoring locations where highest radiation levels are expected the fluence of thermal neutrons will be measured from current gain degradation in dedicated bipolar transistors. The design of the system and tests of its performance in mixed radiation field is described in this paper. First results from this test campaign confirm that doses can be measured with sufficient sensitivity (mGy for total ionizing dose measurements, 10{sup 9} n/cm{sup 2} for NIEL (non-ionizing energy loss) measurements, 10{sup 12} n/cm{sup 2} for thermal neutrons) and accuracy (about 20%) for usage in the ATLAS detector

Performance of electrical contact pins near a nuclear explosion

International Nuclear Information System (INIS)

Ragan, C.E.; Silbert, M.G.; Ellis, A.N.; Robinson, E.E.; Daddario, M.J.

1977-09-01

The pressures attainable in equation-of-state studies using nuclear-explosion-driven shock waves greatly exceed those that can be reached in normal laboratory conditions. However, the diagnostic instrumentation must survive in the high-radiation environment present near such an explosion. Therefore, a set of experiments were fielded on the Redmud event to test the feasibility of using electrical contact pins in this environment. In these experiments a 60-cm-high shield of boron-lead was placed on the rack lid approximately 1 m from the device. A sample consisting of slabs of molybdenum and 238 U was placed on top of the shield, and twelve electrical contact pins were embedded to five different depths in the materials. Five different multiplexing-charging circuits were used for the pins, and a piezoelectric quartz gauge was placed on top of the uranium to obtain an estimate of the fission-energy deposition. All of the charged pins survived the radiation and produced signals indicating shock arrival. The uncertainty in determining the pin-closure time was approximately 3 ns. The signal from the quartz gauge corresponded to a pressure that was consistent with the calculated neutron fluence

CHICSi - a compact ultra-high vacuum compatible detector system for nuclear reaction experiments at storage rings. II. Detectors

Energy Technology Data Exchange (ETDEWEB)

Golubev, P.; Avdeichikov, V.; Carlen, L.; Jakobsson, B. E-mail: bo.jakobsson@kosufy.lu.se; Siwek, A.; Veldhuizen, E.J. van; Westerberg, L.; Whitlow, H.J

2003-03-11

We describe the detectors for identification of charged particles and fragments in CHICSi, a large solid angle multi-telescope system mounted inside an ultra-high vacuum (UHV), cluster-jet target chamber. CHICSi performs nuclear reaction experiments at storage rings. The telescopes consist of a first very thin, 10-14 {mu}m Si detector, a second 300 {mu}m (or possibly 500 {mu}m) ion implanted Si detector supplemented by a 6 mm GSO(Ce) scintillator read out by a photodiode (PD) or by a third 300 {mu}m Si detector. The telescopes provide full charge separation up to Z=17 and mass resolution up to A=9 in the energy range 0.7-60A MeV. The thin p-i-n diode detector, etched out from a 280 {mu}m Si wafer, and the GSO/PD detector, both exclusively developed for CHICSi, provide an energy resolution {<=}8%, while the standard 300 {mu}m detectors have {<=}2% energy resolution. Radiation stability of the Si detectors is confirmed up to an integrated flux of 10{sup 10} alpha particles. The GSO detector has 70% light collection efficiency with the optical coupling to the PD a simple open, 0.2 mm, gap. A new method, developed to perform absolute energy calibration for the GSO/PD detector is presented.

CHICSi - a compact ultra-high vacuum compatible detector system for nuclear reaction experiments at storage rings. II. Detectors

International Nuclear Information System (INIS)

Golubev, P.; Avdeichikov, V.; Carlen, L.; Jakobsson, B.; Siwek, A.; Veldhuizen, E.J. van; Westerberg, L.; Whitlow, H.J.

2003-01-01

We describe the detectors for identification of charged particles and fragments in CHICSi, a large solid angle multi-telescope system mounted inside an ultra-high vacuum (UHV), cluster-jet target chamber. CHICSi performs nuclear reaction experiments at storage rings. The telescopes consist of a first very thin, 10-14 μm Si detector, a second 300 μm (or possibly 500 μm) ion implanted Si detector supplemented by a 6 mm GSO(Ce) scintillator read out by a photodiode (PD) or by a third 300 μm Si detector. The telescopes provide full charge separation up to Z=17 and mass resolution up to A=9 in the energy range 0.7-60A MeV. The thin p-i-n diode detector, etched out from a 280 μm Si wafer, and the GSO/PD detector, both exclusively developed for CHICSi, provide an energy resolution ≤8%, while the standard 300 μm detectors have ≤2% energy resolution. Radiation stability of the Si detectors is confirmed up to an integrated flux of 10 10 alpha particles. The GSO detector has 70% light collection efficiency with the optical coupling to the PD a simple open, 0.2 mm, gap. A new method, developed to perform absolute energy calibration for the GSO/PD detector is presented

Radiation damage study in CZT matrix detectors exposed to gamma rays

International Nuclear Information System (INIS)

Leyva Fabelo, Antonio; Pinnera Hernandez, Ibrahin; Cruz Inclan, Carlos Manuel; Abreu Alfonso, Yamiel; Dona Lemus, Olga; Diaz Garcia, Angelina; Montanno Zetina, Luis Manuel

2009-01-01

Radiation damage in terms of atomic displacements in a typical CZT detector used in medical imaging applications was studied using the Monte Carlo statistical method. All detector structural and geometric features as well as different energies of the photons usually used in the application were taken into account. Considering the Mott McKinley Feshbach classical approach, effective cross sections of the displacements were calculated, including the number of displacements per atom for each atomic species present in the material and each photon energy considered. These results are analyzed and compared. Finally, the radiation damage on CZT detector is compared to that calculated in a similar detector manufactured with other semiconducting materials. (author)

Notification determining technical standards concerning prevention of radiation injuries by electron capture detectors for gas chromatography

International Nuclear Information System (INIS)

1981-01-01

This rule is established under the provisions of the law on the prevention of radiation injuries by radioisotopes, the ordinance and the regulation for the execution of the law. This rule is applied to electron capture detectors for gas chromatography under the law. Basic terms are defined, such as detector radiation source, detector container and carrier gas. The detectors shall consist of detector radiation sources and containers, and the containers must be such that the radiation sources can not be easily taken away and never cause the danger to fall off. The induction and discharge mouths of the detector containers shall be shut tightly with caps, etc. The main structures and radiation sources of detectors shall be made of materials, which are difficult to corrode, and do not melt and easily cause chemical change below 800 deg. C. Detector radiation sources shall be made of metals plated with nickel 63 less than 20 milli-curie. The radiation dose rate on the surface of a detector shall be shielded to less than 0.06 milli-rem an hour. The temperature of detectors and carrier gas shall not exceed 350 deg. C. Corrosive gas shall not be used as carrier gas. The period of effective indication is 5 years. The method of washing, and the conditions of leak, heat-resistance and shock-resistance examinations are defined, respectively. (Okada, K.)

Evaluation of the radiation field in the future circular collider detector

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00211473; Cerutti, Francesco; Ferrari, Alfredo; Riegler, Werner; Vlachoudis, Vasilis; CERN. Geneva. ATS Department

2016-01-01

The radiation load on a detector at a 100 TeV proton-proton collider, that is being investigated within the Future Circular Collider (FCC) study, is presented. A peak luminosity of 30 1034 cm−2s−1 and a total integrated luminosity of 30 ab−1 are assumed for these radiation studies. A first concept of the detector foresees the presence of central and forward sub-detectors that provide acceptance up to |η|=6 inside a magnetic field generated by the combination of a central solenoid and two forward dipoles. This layout has been modelled and relevant fluence and dose distributions have been calculated using the FLUKA Monte Carlo code. Distributions of fluence rates are discussed separately for charged particles, neutrons and pho- tons. Dose and 1 MeV neutron equivalent fluence, for the accumulated integrated luminosity, are presented. The peak values of these quantities in the different sub-detectors are highlighted, in order to define the radiation tolerance requirements for the choice of possible technol...

Energy dispersive X-ray fluorescence from useless tyres samples with a Si PIN detector; Fluorescencia de raios X por dispersao em energia de amostras de pneus inserviveis com detector de Si-PIN

Energy Technology Data Exchange (ETDEWEB)

Lopes, Fabio; Scheibel, Viviane [Universidade Estadual de Londrina, PR (Brazil). Dept. de Fisica. Lab. de Fisica Nuclear Aplicada]. E-mail: bonn@uel.br; Melquiades, Fabio Luiz [Universidade Estadual do Centro-Oeste, Guarapuava, PR (Brazil). Dept. de Fisica; Moraes, Liz Mary Bueno de [Centro de Energia Nuclear na Agricultura (CENA), Piracicaba, SP (Brazil). Lab. de Instrumentacao Nuclear

2005-07-01

The concentration of Zn from discard tyre samples is of environmental interest, since on its production are used S for the rubber vulcanization process, and Zn O as reaction catalyze. The useless tyres are been used for asphalt pave, burn in cement industry and thermoelectric power plant and in erosion control of agriculture areas. Analyses of these samples requires frequently chemical digestion that is expensive and take a long time. Trying to eliminate these limitations, the objective of this work was use Energy Dispersive X Ray Fluorescence technique (EDXRF) with a portable system as the technique is multi elementary and needs a minimum sample preparation. Five useless tyres samples were grind in a knife mill and after this in a cryogenic mill, and analyzed in pellets form, using a X ray mini tube (Ag target, Mo {sub l}ter, 25 kV/20 {sub A}) for 200 s and a Si-PIN semiconductor detector coupled to a multichannel analyzer. Were obtained Zn concentrations in the range of 40.6 to 44.2 {sub g} g{sub 1}, representing nearly 0.4. (author)

Modeling Radiation Damage Effects in 3D Pixel Digitization for the ATLAS Detector

CERN Document Server

Giugliarelli, Gilberto; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This poster presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS Detector.

Modeling Radiation Damage Effects in 3D Pixel Digitization for the ATLAS Detector

CERN Document Server

Wallangen, Veronica; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10$^{15}$ n$_\\mathrm{eq}$/cm$^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This work presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS detector.

Performance Analysis of OCDMA Based on AND Detection in FTTH Access Network Using PIN & APD Photodiodes

Science.gov (United States)

Aldouri, Muthana; Aljunid, S. A.; Ahmad, R. Badlishah; Fadhil, Hilal A.

2011-06-01

In order to comprise between PIN photo detector and avalanche photodiodes in a system used double weight (DW) code to be a performance of the optical spectrum CDMA in FTTH network with point-to-multi-point (P2MP) application. The performance of PIN against APD is compared through simulation by using opt system software version 7. In this paper we used two networks designed as follows one used PIN photo detector and the second using APD photo diode, both two system using with and without erbium doped fiber amplifier (EDFA). It is found that APD photo diode in this system is better than PIN photo detector for all simulation results. The conversion used a Mach-Zehnder interferometer (MZI) wavelength converter. Also we are study, the proposing a detection scheme known as AND subtraction detection technique implemented with fiber Bragg Grating (FBG) act as encoder and decoder. This FBG is used to encode and decode the spectral amplitude coding namely double weight (DW) code in Optical Code Division Multiple Access (OCDMA). The performances are characterized through bit error rate (BER) and bit rate (BR) also the received power at various bit rate.

Radiation-hard ASICs for optical data transmission in the first phase of the LHC upgrade

International Nuclear Information System (INIS)

Gan, K.K.; Buchholz, P.; Kagan, H.P.; Kass, R.D.; Moore, J.R.; Smith, D.S.; Wiese, A.; Ziolkowskic, M.

2011-01-01

We have designed two ASICs for possible applications in the optical links of a new layer of the pixel detector to be install inside the ATLAS Pixel detector for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for a VCSEL and a receiver/decoder to decode the signal received at a PIN diode to extract the data and clock. Both ASICs contain 4 channels for operation with a VCSEL or PIN array. The ASICs were designed using a 130 nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated ASICs and the performance of the ASICs is satisfactory. The receiver/decoder properly decodes the bi-phase marked input stream with low PIN current and the driver can operate a VCSEL up to ∼5 Gb/s. The added functionalities are also successful, including redundancy to bypass a broken VCSEL or PIN channel, individual control of VCSEL current, and power-on reset circuit to set all VCSEL currents to a nominal value.

Radiation-hard ASICs for optical data transmission in the first phase of the LHC upgrade

CERN Document Server

Gan, K K; Kagan, H P; Kass, R D; Moore, J R; Smith, D S; Wiese, A; Ziolkowskic, M; 10.1088/1748-0221/5/12/C12006

2010-01-01

We have designed two ASICs for possible applications in the optical links of a new layer of the pixel detector to be install inside the ATLAS Pixel detector for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for the VCSEL and a receiver/decoder to decode the signal received at the PIN diode to extract the data and clock. Both ASICs contain 4 channels for operation with a VCSEL or PIN array. The ASICs were designed using a 130 nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated ASICs and the performance of the ASICs is satisfactory. The receiver/decoder can properly decode the bi-phase marked input stream with low PIN current and the driver can operate a VCSEL up to ~ 5 Gb/s. The added functionalities are also successful, including redundancy to bypass a broken VCSEL or PIN channel, individual control of VCSEL current, and power-on reset circuit to set all VCSEL currents to a nominal value. The ASICs were irradiated to a dose of 46 Mrad ...

Pinning, de-pinning and re-pinning of a slowly varying rivulet

KAUST Repository

Paterson, C.; Wilson, S.K.; Duffy, B.R.

2013-01-01

The solutions for the unidirectional flow of a thin rivulet with prescribed volume flux down an inclined planar substrate are used to describe the locally unidirectional flow of a rivulet with constant width (i.e. pinned contact lines) but slowly varying contact angle as well as the possible pinning and subsequent de-pinning of a rivulet with constant contact angle and the possible de-pinning and subsequent re-pinning of a rivulet with constant width as they flow in the azimuthal direction from the top to the bottom of a large horizontal cylinder. Despite being the same locally, the global behaviour of a rivulet with constant width can be very different from that of a rivulet with constant contact angle. In particular, while a rivulet with constant non-zero contact angle can always run from the top to the bottom of the cylinder, the behaviour of a rivulet with constant width depends on the value of the width. Specifically, while a narrow rivulet can run all the way from the top to the bottom of the cylinder, a wide rivulet can run from the top of the cylinder only to a critical azimuthal angle. The scenario in which the hitherto pinned contact lines of the rivulet de-pin at the critical azimuthal angle and the rivulet runs from the critical azimuthal angle to the bottom of the cylinder with zero contact angle but slowly varying width is discussed. The pinning and de-pinning of a rivulet with constant contact angle, and the corresponding situation involving the de-pinning and re-pinning of a rivulet with constant width at a non-zero contact angle which generalises the de-pinning at zero contact angle discussed earlier, are described. In the latter situation, the mass of fluid on the cylinder is found to be a monotonically increasing function of the constant width. © 2013 Elsevier Masson SAS. All rights reserved.

Pinning, de-pinning and re-pinning of a slowly varying rivulet

KAUST Repository

Paterson, C.

2013-09-01

The solutions for the unidirectional flow of a thin rivulet with prescribed volume flux down an inclined planar substrate are used to describe the locally unidirectional flow of a rivulet with constant width (i.e. pinned contact lines) but slowly varying contact angle as well as the possible pinning and subsequent de-pinning of a rivulet with constant contact angle and the possible de-pinning and subsequent re-pinning of a rivulet with constant width as they flow in the azimuthal direction from the top to the bottom of a large horizontal cylinder. Despite being the same locally, the global behaviour of a rivulet with constant width can be very different from that of a rivulet with constant contact angle. In particular, while a rivulet with constant non-zero contact angle can always run from the top to the bottom of the cylinder, the behaviour of a rivulet with constant width depends on the value of the width. Specifically, while a narrow rivulet can run all the way from the top to the bottom of the cylinder, a wide rivulet can run from the top of the cylinder only to a critical azimuthal angle. The scenario in which the hitherto pinned contact lines of the rivulet de-pin at the critical azimuthal angle and the rivulet runs from the critical azimuthal angle to the bottom of the cylinder with zero contact angle but slowly varying width is discussed. The pinning and de-pinning of a rivulet with constant contact angle, and the corresponding situation involving the de-pinning and re-pinning of a rivulet with constant width at a non-zero contact angle which generalises the de-pinning at zero contact angle discussed earlier, are described. In the latter situation, the mass of fluid on the cylinder is found to be a monotonically increasing function of the constant width. © 2013 Elsevier Masson SAS. All rights reserved.

Radiation hard silicon particle detectors for HL-LHC—RD50 status report

Energy Technology Data Exchange (ETDEWEB)

Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

2017-02-11

It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

Detection of gamma-neutron radiation by solid-state scintillation detectors. Detection of gamma-neutron radiation by novel solid-state scintillation detectors

Energy Technology Data Exchange (ETDEWEB)

Ryzhikov, V.; Grinyov, B.; Piven, L.; Onyshchenko, G.; Sidletskiy, O. [Institute for Scintillation Materials of the NAS of Ukraine, Kharkov, (Ukraine); Naydenov, S. [Institute for Single Crystals of the National Academy of Sciences of Ukraine, Kharkov, (Ukraine); Pochet, T. [DETEC-Europe, Vannes (France); Smith, C. [Naval Postgraduate School, Monterey, CA (United States)

2015-07-01

It is known that solid-state scintillators can be used for detection of both gamma radiation and neutron flux. In the past, neutron detection efficiencies of such solid-state scintillators did not exceed 5-7%. At the same time it is known that the detection efficiency of the gamma-neutron radiation characteristic of nuclear fissionable materials is by an order of magnitude higher than the efficiency of detection of neutron fluxes alone. Thus, an important objective is the creation of detection systems that are both highly efficient in gamma-neutron detection and also capable of exhibiting high gamma suppression for use in the role of detection of neutron radiation. In this work, we present the results of our experimental and theoretical studies on the detection efficiency of fast neutrons from a {sup 239}Pu-Be source by the heavy oxide scintillators BGO, GSO, CWO and ZWO, as well as ZnSe(Te, O). The most probable mechanism of fast neutron interaction with nuclei of heavy oxide scintillators is the inelastic scattering (n, n'γ) reaction. In our work, fast neutron detection efficiencies were determined by the method of internal counting of gamma-quanta that emerge in the scintillator from (n, n''γ) reactions on scintillator nuclei with the resulting gamma energies of ∼20-300 keV. The measured efficiency of neutron detection for the scintillation crystals we considered was ∼40-50 %. The present work included a detailed analysis of detection efficiency as a function of detector and area of the working surface, as well as a search for new ways to create larger-sized detectors of lower cost. As a result of our studies, we have found an unusual dependence of fast neutron detection efficiency upon thickness of the oxide scintillators. An explanation for this anomaly may involve the competition of two factors that accompany inelastic scattering on the heavy atomic nuclei. The transformation of the energy spectrum of neutrons involved in the (n, n

Silicon carbide and its use as a radiation detector material

International Nuclear Information System (INIS)

Nava, F; Bertuccio, G; Cavallini, A; Vittone, E

2008-01-01

We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented. The most recent data on charge transport parameters across the Schottky barrier and how these are related to radiation spectrometer performance are presented. Experimental results on pixel detectors having equivalent noise energies of 144 eV FWHM (7.8 electrons rms) and 196 eV FWHM at +27 °C and +100 °C, respectively, are reported. Results of studying the radiation resistance of 4H–SiC are analysed. The data on the ionization energies, capture cross section, deep-level centre concentrations and their plausible structures formed in SiC as a result of irradiation with various particles are reviewed. The emphasis is placed on the study of the 1 MeV neutron irradiation, since these thermal particles seem to play the main role in the detector degradation. An accurate electrical characterization of the induced deep-level centres by means of PICTS technique has allowed one to identify which play the main role in the detector degradation. (topical review)

Technologies pioneered by LHC. Superconducting magnet and radiation-tolerant tracking detector

International Nuclear Information System (INIS)

Yamamoto, Akira; Unno, Yoshinobu

2007-01-01

In the LHC project of proton-proton collisions exploring the energy frontier, superconducting magnets and radiation-tolerant tracking detector play fundamental roles as key technologies. The superconducting magnets contribute to bending and focusing particle beam by using high magnetic field created with the NbTi superconductor cooled to the superfluid temperature of He (1.9 K). In order to overcome the unprecedented radiation damage and to capture the particles emerging with high energy and high density, the large area and highly radiation-tolerant silicon semiconductor tracking detector has been developed for the LHC experiment. (author)

Radiation hard silicon microstrip detectors for use in ATLAS at CERN

Energy Technology Data Exchange (ETDEWEB)

Johansen, Lars Gimmestad

2005-07-01

The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

Radiation hard silicon microstrip detectors for use in ATLAS at CERN

International Nuclear Information System (INIS)

Johansen, Lars Gimmestad

2005-06-01

The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

Test of radiation hardness of pcCVD detectors

Energy Technology Data Exchange (ETDEWEB)

Schlemme, Steffen [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Technische Universitaet Darmstadt (Germany); Enders, Joachim [Technische Universitaet Darmstadt (Germany); Figuera, P.; Salamone, S. [LNS-INFN Catania (Italy); Fruehauf, J.; Kis, Mladen; Kratz, A.; Kurz, N.; Loechner, S.; Nociforo, Chiara; Schirru, Fabio; Szczepanczyk, B.; Traeger, M.; Visinka, R. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Musumarra, A. [LNS-INFN Catania (Italy); University of Catania (Italy)

2016-07-01

The new in-flight separator Super-FRS is under construction at the Facility for Antiproton and Ion Research (FAIR, Darmstadt). Ion rates up to 3 x 10{sup 11} {sup 238}U/spill demand an adaption of detectors to a high radiation environment. A test experiment to investigate the radiation hardness of polycrystalline diamond detectors (pcCVD) was performed at the LNS-INFN in Catania using a {sup 12}C beam at 62 MeV/u and intensities of up to 1.5 pnA. The setup consisted of pcCVD strip detectors to measure the beam profile, a single crystal diamond detector to calibrate the ionisation chamber working in current mode as a beam intensity monitor and a pcCVD sample to be irradiated. The IC used was designed for FAIR and showed a stable counting rate allowing us to calibrate and perform beam intensity measurements with it. The total measured counts on the sample were 8.25 x 10{sup 11} counts/mm{sup 2} over a period of 60 hours. Digital waveforms of the pcCVD signals were taken with an oscilloscope and analysed. The results showed no change of the pcCVD signal properties during the entire irradiation.

Experimental investigation of the effects of orientation angle on heat transfer performance of pin-finned surfaces in natural convection

International Nuclear Information System (INIS)

Sertkaya, Ahmet Ali; Bilir, Sefik; Kargici, Suna

2011-01-01

Natural convection heat transfer in air from a pin-finned surface is investigated experimentally by considering the effect of radiation heat transfer. The plate was oriented as the pin arrays facing either downwards or upwards from vertical axis with different angles and the experiments were performed for different values of heater power input. From the results of the experiments it is observed that the pin fins increase the heat transfer considerably when compared to the unpinned surface. The upfacing pins are more enhancing heat transfer than the downfacing pins and the enhancement is decreasing with increasing orientation angle from the vertical axis. -- Research highlights: → Effect of orientation in free convection heat transfer from a pin-finned surface. → The upfacing pins are more enhancing heat transfer than the downfacing pins. → Radiation view factor is calculated by a modular analysis. → The radiation is comparable to free convection as not to be neglected. → The radiative part is 25-40% and increases for low heat transfer rates.

Chemical Emulation of Radiation Pinning Center Geometries in High Temperature Superconductors

National Research Council Canada - National Science Library

Weinstein, Roy

2004-01-01

...). Discovery of an entire class of 200-400 nm size, double perovskite pinning centers, (A,B)REBa(sub 2)O(sub 6), led to 20 new chemical "point" pinning centers, and enabled replacement of successful but expensive and radioactive...

The ALICE Transition Radiation Detector: construction, operation, and performance

OpenAIRE

Acharya, Shreyasi; Adam, Jaroslav; Ahmad, Nazeer; Bhattacharjee, Buddhadeb; Turrisi, Rosario; Tveter, Trine Spedstad; Ullaland, Kjetil; Umaka, Ejiro Naomi; Uras, Antonio; Usai, Gianluca; Utrobicic, Antonija; Vala, Martin; Van Der Maarel, Jasper; Van Hoorne, Jacobus Willem; Bhom, Jihyun

2018-01-01

The Transition Radiation Detector (TRD) was designed and built to enhance the capabilities of the ALICE detector at the Large Hadron Collider (LHC). While aimed at providing electron identification and triggering, the TRD also contributes significantly to the track reconstruction and calibration in the central barrel of ALICE. In this paper the design, construction, operation, and performance of this detector are discussed. A pion rejection factor of up to 410 is achieved at a momentum of 1 G...

Design and construction of the prototype synchrotron radiation detector

CERN Document Server

Anderhub, H; Baetzner, D; Baumgartner, S; Biland, A; Camps, C; Capell, M; Commichau, V; Djambazov, L; Fanchiang, Y J; Flügge, G; Fritschi, M; Grimm, O; Hangarter, K; Hofer, H; Horisberger, Urs; Kan, R; Kaestli, W; Kenney, G P; Kim, G N; Kim, K S; Koutsenko, V F; Kraeber, M; Kuipers, J; Lebedev, A; Lee, M W; Lee, S C; Lewis, R; Lustermann, W; Pauss, Felicitas; Rauber, T; Ren, D; Ren, Z L; Röser, U; Son, D; Ting, Samuel C C; Tiwari, A N; Viertel, Gert M; Gunten, H V; Wicki, S W; Wang, T S; Yang, J; Zimmermann, B

2002-01-01

The Prototype Synchrotron Radiation Detector (PSRD) is a small-scale experiment designed to measure the rate of low-energy charged particles and photons in near the Earth's orbit. It is a precursor to the Synchrotron Radiation Detector (SRD), a proposed addition to the upgraded version of the Alpha Magnetic Spectrometer (AMS-02). The SRD will use the Earth's magnetic field to identify the charge sign of electrons and positrons with energies above 1 TeV by detecting the synchrotron radiation they emit in this field. The differential energy spectrum of these particles is astrophysically interesting and not well covered by the remaining components of AMS-02. Precise measurements of this spectrum offer the possibility to gain information on the acceleration mechanism and characteristics of all cosmic rays in our galactic neighbourhood. The SRD will discriminate against protons as they radiate only weakly. Both the number and energy of the synchrotron photons that the SRD needs to detect are small. The identificat...

Industrial workshop on LASL semiconductor radiation-detector research and development

International Nuclear Information System (INIS)

Endebrock, M.

1978-11-01

An Industrial Workshop on LASL Semiconductor Radiation Detector Research and Development was held at the Los Alamos Scientific Laboratory (LASL) in the spring of 1977. The purpose was to initiate communication between our detector research and development program and industry. LASL research programs were discussed with special emphasis on detector problems. Industrial needs and capabilities in detector research and development were also presented. Questions of technology transfer were addressed. The notes presented here are meant to be informal, as were the presentations

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

CERN Document Server

Fretwurst, E.; Stahl, J.; Pintilie, I.

2002-01-01

The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising re...

An iterative method applied to optimize the design of PIN photodiodes for enhanced radiation tolerance and maximum light response

International Nuclear Information System (INIS)

Cedola, A.P.; Cappelletti, M.A.; Casas, G.; Peltzer y Blanca, E.L.

2011-01-01

An iterative method based on numerical simulations was developed to enhance the proton radiation tolerance and the responsivity of Si PIN photodiodes. The method allows to calculate the optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total reverse current of the photodiode and maximize its response to light. The implementation of the method is useful in the design of devices whose operation point should not suffer variations due to radiation.

Radiative processes for Rindler and accelerating observers and the stress-tensor detector

International Nuclear Information System (INIS)

Paola, R. De; Svaiter, N.F.

1996-04-01

It is considered a monopole detector interacting with a massive scalar field. Using the rotating wave approximation the radiative processes is discussed from the accelerated frame point of view. After this, it is obtained the Minkowski vacuum stress tensor measured by the accelerated observer using a non-gravitational stress sensor detector. Finally we analyse radiative processes of the monopole detector travelling in a world line that is inertial in the infinite past and has a constant proper acceleration in the infinite future. (author). 30 refs

Detector and quantifier of ionizing x-radiation by indirect method

International Nuclear Information System (INIS)

Pablo, Aramayo; Roberto, Cruz; Luis, Rocha; Rotger Viviana I; Olivera, Juan Manuel

2007-01-01

The work presents the development of a device able to detect and quantify ionizing radiations. The transduction principle proposed for the design of the detector consists on using the properties of the fluorescent screens able to respond to the incident radiation with a proportional brightness. Though the method is well-known, it proved necessary to optimize the design of the detectors in order to get a greater efficiency in the relationship radiation/brightness; to that purpose, different models were tried out, varying its geometry and the optoelectronic device. The resultant signal was processed and presented in a visualization system. It is important to highlight that the project is in development and the results we obtained are preliminary

Charge collection efficiency in a semiconductor radiation detector with a non-constant electric field

International Nuclear Information System (INIS)

Shah, K.S.; Lund, J.C.; Olschner, F.

1990-01-01

The development of improved semiconductor radiation detectors would be facilitated by a quantitative model that predicts the performance of these detectors as a function of material characteristics and device operating parameters. An accurate prediction of the pulse height spectrum from a radiation detector can be made if both the noise and the charge collection properties of the detector are understood. The noise characteristics of semiconductor radiation detectors have been extensively studied. The effect of noise can be closely simulated by convoluting the noise-free pulse height spectrum with a Gaussian function. Distortion of semiconductor detector's pulse height spectrum from charge collection effects is more complex than the effects of noise and is more difficult to predict. To compute these distortions it is necessary to know how the charge collection efficiency η varies as a function of position within the detector x. These effects are shown. This problem has been previously solved for planar detectors with a constant electric field, for the case of spherical detectors, and for coaxial detectors. In this paper the authors describe a more general solution to the charge collection problem which includes the case of a non-constant electric field in a planar geometry

An intercomparison of detectors for measurement of background radiation

International Nuclear Information System (INIS)

Nielsen, S.P.; Boetter-Jensen, L.

1981-04-01

Measurements of the background radiation were made in 1978 at 14 locations with a high-pressure ionization chamber, thermoluminiscence dosimeters (TLD's), two NaI(Tl) detectors, and a Ge(Li) spectrometer system. Simultaneous measurements with the ionization chamber and the spectrometer system provide reliable estimates of the total background exposure rate, of the individual contributors to the terrestrial exposure rate, and of the exposure rate from the secondary cosmic radiation. The TLD results agree with those of the ionization chamber. The NaI(Tl) detector results show that accurate estimates of the terrestrial exposure rate can be obtained if empirical corrections are applied. (author)

Dual-Energy Semiconductor Detector of X-rays and Gamma Radiation

Directory of Open Access Journals (Sweden)

Brodyn, M.S.

2014-03-01

Full Text Available Analysis of the major types of ionizing radiation detectors, their advantages and disadvantages are presented. Application of ZnSe-based semiconductor detector in high temperature environment is substantiated. Different forms of ZnSe-based detector samples and double-crystal scheme for registration of X- and gamma rays in a broad energy range were used . Based on the manufactured simulator device, the study sustains the feasibility of the gamma quanta recording by a high-resistance ZnSe-based detector operating in a perpulse mode.

Mobile robot prototype detector of gamma radiation; Prototipo de robot movil detector de radiacion gamma

Energy Technology Data Exchange (ETDEWEB)

Vazquez C, R.M. [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico); Duran V, M. D.; Jardon M, C. I., E-mail: raulmario.vazquez@inin.gob.mx [Tecnologico de Estudios Superiores de Villa Guerrero, Carretera Federal Toluca-Ixtapan de la Sal Km. 64.5, La Finca Villa Guerrero, Estado de Mexico (Mexico)

2014-10-15

In this paper the technological development of a mobile robot prototype detector of gamma radiation is shown. This prototype has been developed for the purpose of algorithms implementation for the applications of terrestrial radiation monitoring of exposed sources, search for missing radioactive sources, identification and delineation of radioactive contamination areas and distribution maps generating of radioactive exposure. Mobile robot detector of radiation is an experimental technology development platform to operate in laboratory environment or flat floor facilities. The prototype integrates a driving section of differential configuration robot on wheels, a support mechanism and rotation of shielded detector, actuator controller cards, acquisition and processing of sensor data, detection algorithms programming and control actuators, data recording (Data Logger) and data transmission in wireless way. The robot in this first phase is remotely operated in wireless way with a range of approximately 150 m line of sight and can extend that range to 300 m or more with the use of signal repeaters. The gamma radiation detection is performed using a Geiger detector shielded. Scan detection is performed at various time sampling periods and diverse positions of discrete or continuous angular orientation on the horizon. The captured data are geographical coordinates of robot GPS (latitude and longitude), orientation angle of shield, counting by sampling time, date, hours, minutes and seconds. The data is saved in a file in the Micro Sd memory on the robot. They are also sent in wireless way by an X Bee card to a remote station that receives for their online monitoring on a laptop through an acquisition program by serial port on Mat Lab. Additionally a voice synthesizing card with a horn, both in the robot, periodically pronounced in Spanish, data length, latitude, orientation angle of shield and detected accounts. (Author)

Review on the characteristics of radiation detectors for dosimetry and imaging

International Nuclear Information System (INIS)

Seco, Joao; Clasie, Ben; Partridge, Mike

2014-01-01

The enormous advances in the understanding of human anatomy, physiology and pathology in recent decades have led to ever-improving methods of disease prevention, diagnosis and treatment. Many of these achievements have been enabled, at least in part, by advances in ionizing radiation detectors. Radiology has been transformed by the implementation of multi-slice CT and digital x-ray imaging systems, with silver halide films now largely obsolete for many applications. Nuclear medicine has benefited from more sensitive, faster and higher-resolution detectors delivering ever-higher SPECT and PET image quality. PET/MR systems have been enabled by the development of gamma ray detectors that can operate in high magnetic fields. These huge advances in imaging have enabled equally impressive steps forward in radiotherapy delivery accuracy, with 4DCT, PET and MRI routinely used in treatment planning and online image guidance provided by cone-beam CT. The challenge of ensuring safe, accurate and precise delivery of highly complex radiation fields has also both driven and benefited from advances in radiation detectors. Detector systems have been developed for the measurement of electron, intensity-modulated and modulated arc x-ray, proton and ion beams, and around brachytherapy sources based on a very wide range of technologies. The types of measurement performed are equally wide, encompassing commissioning and quality assurance, reference dosimetry, in vivo dosimetry and personal and environmental monitoring. In this article, we briefly introduce the general physical characteristics and properties that are commonly used to describe the behaviour and performance of both discrete and imaging detectors. The physical principles of operation of calorimeters; ionization and charge detectors; semiconductor, luminescent, scintillating and chemical detectors; and radiochromic and radiographic films are then reviewed and their principle applications discussed. Finally, a general

Detector and dosimeter for neutrons and other radiation

International Nuclear Information System (INIS)

Apfel, R.E.

1979-01-01

A radiation detector and dosimeter is based on the fact that a sufficiently finely-dispersed liquid suspended in a host liquid of high viscosity or gel is stable at temperatures above its normal boiling point for long periods of time provided it is protected from contact with walls, or other types of initiators which can cause volatilization or vaporization of the droplets. Radiation, and particularly neutron radiation of sufficient energy and intensity on coming in contact with such droplets can trigger volatilization. The volume of vapor evolved can then serve as a measure of radiation intensity and dosage

Recent advances in MEMS radiation detectors for improving radiation safety in nuclear reactors

International Nuclear Information System (INIS)

Bhisikar, Abhay

2016-01-01

MEMS (micro-electro-mechanical-system) is a core technology that leverages integrated circuit (IC) fabrication technology, builds ultra-miniaturized components and, enables radical new system applications. When considering MEMS radiation detectors; they are the specific micromechanical structures which are designed to sense doses of radiations. The present article reviews the most recent progress made in the domain of MEMS ionizing radiation sensors at international level for nuclear reactors which can be relevant to Indian context. (author)

SENTIRAD-An innovative personal radiation detector based on a scintillation detector and a silicon photomultiplier

International Nuclear Information System (INIS)

Osovizky, A.; Ginzburg, D.; Manor, A.; Seif, R.; Ghelman, M.; Cohen-Zada, I.; Ellenbogen, M.; Bronfenmakher, V.; Pushkarsky, V.; Gonen, E.; Mazor, T.; Cohen, Y.

2011-01-01

The alarming personal radiation detector (PRD) is a device intended for Homeland Security (HLS) applications. This portable device is designed to be worn or carried by security personnel to detect photon-emitting radioactive materials for the purpose of crime prevention. PRD is required to meet the scope of specifications defined by various HLS standards for radiation detection. It is mandatory that the device be sensitive and simultaneously small, pocket-sized, of robust mechanical design and carriable on the user's body. To serve these specialized purposes and requirements, we developed the SENTIRAD, a new radiation detector designed to meet the performance criteria established for counterterrorist applications. SENTIRAD is the first commercially available PRD based on a CsI(Tl) scintillation crystal that is optically coupled with a silicon photomultiplier (SiPM) serving as a light sensor. The rapidly developing technology of SiPM, a multipixel semiconductor photodiode that operates in Geiger mode, has been thoroughly investigated in previous studies. This paper presents the design considerations, constraints and radiological performance relating to the SENTIRAD radiation sensor.

Test-beam Results from a RICH Detector Prototype Using Aerogel Radiator and Pixel Hybrid Photon Detectors

CERN Document Server

Aglieri-Rinella, G; Van Lysebetten, A; Piedigrossi, D; Wyllie, K; Bellunato, T F; Calvi, M; Matteuzzi, C; Musy, M; Perego, D L; Somerville, L P; Newby, C; Easo, S; Wotton, S

2006-01-01

A test-beam study was performed at CERN with a Ring Imaging Cherenkov (RICH) prototype using three pixel Hybrid Photon Detectors. Results on the photon yield and Cherenkov angle resolution are presented here, for the Aerogel radiator and also for reference runs taken with Nitrogen radiator.

Using radio frequency and ultrasonic antennas for inspecting pin-type insulators on medium-voltage overhead distribution lines

Directory of Open Access Journals (Sweden)

Cícero Lefort Borges

2013-05-01

Full Text Available This paper summarises the activities undertaken when using antennas (ultrasound and radiofrequency for identifying insulators in pre-failure state by detecting the noise emitted by the distribution line and correlating this with these insulators (porcelain pin type dielectric breakdown. This has led to developing low-cost maintenance procedures and providing support and criteria for engineer-ing decisions regarding replacing these insulators. The technique used two detectors; a radio frequency detector was used in a first investigation of a particular distribution line, set to 40 MHz and installed on the roof of a moving vehicle. The ultrasound detector was used for inspecting (phases A, B, C each structure (pole selected. Atmospheric conditions had no influence on defining pre-failure insulators (pin type based on the noise detection technique. Pin type insulators emitting noise should be replaced since measurement was made from the ground and near the base of the post.

Radiation imaging with optically read out GEM-based detectors

Science.gov (United States)

Brunbauer, F. M.; Lupberger, M.; Oliveri, E.; Resnati, F.; Ropelewski, L.; Streli, C.; Thuiner, P.; van Stenis, M.

2018-02-01

Modern imaging sensors allow for high granularity optical readout of radiation detectors such as MicroPattern Gaseous Detectors (MPGDs). Taking advantage of the high signal amplification factors achievable by MPGD technologies such as Gaseous Electron Multipliers (GEMs), highly sensitive detectors can be realised and employing gas mixtures with strong scintillation yield in the visible wavelength regime, optical readout of such detectors can provide high-resolution event representations. Applications from X-ray imaging to fluoroscopy and tomography profit from the good spatial resolution of optical readout and the possibility to obtain images without the need for extensive reconstruction. Sensitivity to low-energy X-rays and energy resolution permit energy resolved imaging and material distinction in X-ray fluorescence measurements. Additionally, the low material budget of gaseous detectors and the possibility to couple scintillation light to imaging sensors via fibres or mirrors makes optically read out GEMs an ideal candidate for beam monitoring detectors in high energy physics as well as radiotherapy. We present applications and achievements of optically read out GEM-based detectors including high spatial resolution imaging and X-ray fluorescence measurements as an alternative readout approach for MPGDs. A detector concept for low intensity applications such as X-ray crystallography, which maximises detection efficiency with a thick conversion region but mitigates parallax-induced broadening is presented and beam monitoring capabilities of optical readout are explored. Augmenting high resolution 2D projections of particle tracks obtained with optical readout with timing information from fast photon detectors or transparent anodes for charge readout, 3D reconstruction of particle trajectories can be performed and permits the realisation of optically read out time projection chambers. Combining readily available high performance imaging sensors with compatible

Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection

International Nuclear Information System (INIS)

Negru, R.

2008-06-01

The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm 2 /V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can also

A detector for localizing diverging beams of ionizing radiations

International Nuclear Information System (INIS)

Allemand, Robert.

1974-01-01

Description is given of a detector for localizing diverging radiation beams, adapted to provide the angular distribution of nuclear events. That detector comprises a casing filled with a fluid adapted to produce electric charges under radiations and provided with a front-side and a rear-side, means for generating an electric field at right angles to portions of parallel surfaces of revolution having in common an axis of revolution contained in the place of symmetry, and a plane unit for localizing electric charges mounted at the rear of said means, the initial portion of the beam being on the axis of revolution. This can be applied to X-ray diffraction and to neutron diffraction [fr

Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection; Conception et modelisation de pixels de photodetection: Photodiodes PIN en silicium amorphe en vue de leurs utilisations comme detecteurs de particules

Energy Technology Data Exchange (ETDEWEB)

Negru, R

2008-06-15

The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm{sup 2}/V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can

Multi-detector environmental radiation monitor with multichannel data communication for Indian Environmental Radiation Monitoring Network (IERMON)

International Nuclear Information System (INIS)

Patel, M.D.; Ratheesh, M.P.; Prakasha, M.S.; Salunkhe, S.S.; Vinod Kumar, A.; Puranik, V.D.; Nair, C.K.G.

2011-01-01

A solar powered system for online monitoring of environmental radiation with multiple detectors has been designed, developed and produced. Multiple GM tube detectors have been used to extend the range of measurement from 50 nano Gy/hr to 20 Gy/hr and to enhance the reliability of the system. Online data communication using GSM based and direct LAN based communication has been incorporated. Options for use of power supply from mains powered and battery powered have been enabled. Care has been taken to make it weather-proof, compact, elegant and reliable. The development is a part of the ongoing program of country-wide deployment of radiation monitors under 'Indian Environmental Radiation MOnitoring Network' (IERMON). (author)

A review of advances in pixel detectors for experiments with high rate and radiation

Science.gov (United States)

Garcia-Sciveres, Maurice; Wermes, Norbert

2018-06-01

The large Hadron collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the high luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.

Passivation layer of Si/Li ionizing radiation detectors

International Nuclear Information System (INIS)

Vidra, M.; Reznicek, L.

1992-01-01

The proposed passivating layer of Si/Li ionizing radiation detectors ensures a good long-time stability of their volt-ampere characteristics and noise properties. The layer can be applied to protect the detector junction surface in systems cyclically cooled to liquid nitrogen temperature, and in preamplifier feedback optoelectronics to prevent light from entering into the detector. The passivating layer is obtained by evaporating solvent from a cured suspension of boron nitride or aluminium oxide powder in a solution containing piceine and a nonpolar solvent such as toluene. The weight proportions are 1 to 8 parts of piceine, 3 to 9 parts of boron nitride or aluminium oxide, and 1 to 10 parts of the nonpolar solvent. (Z.S.)

VeriTainer radiation detector for intermodal shipping containers

International Nuclear Information System (INIS)

Redus, R.H.; Alioto, M.; Sperry, D.; Pantazis, T.

2007-01-01

The VeriSpreader TM radiation detection system will monitor every container passing through a shipping terminal without impeding the flow of commerce by making the radiation measurements during normal container handling. This is accomplished by integrating neutron and spectroscopic γ-ray detectors into a container crane spreader bar, the part of the crane that directly engages the intermodal shipping containers while moving from ship to shore and vice versa. The use of a spectroscopic γ-detector reduces the rate of nuisance alarms due to naturally occurring radioactive material (NORM). The combination of γ and neutron detection reduces the effectiveness of shielding and countermeasures. The challenges in this spreader bar-based approach arise from the harsh environment, particularly the mechanical shock and the vibration of the moving spreader bar, since the measurement is taken while the container is moving. The electrical interfaces in the port environment, from the crane to a central monitoring office, present further challenges. It is the packaging, electronic interfaces, and data processing software that distinguish this system, which is based on conventional radiation sensors. The core of the system is Amptek's GAMMA-RAD, which integrates a ruggedized scintillator/PMT, digital pulse shaping electronics, electronics for the neutron detector, power supplies, and an Ethernet interface. The design of the VeriTainer system and results from both the laboratory and a proof-of-concept test at the Port of Oakland, California will be presented

Examination system utilizing ionizing radiation and a flexible, miniature radiation detector probe

Science.gov (United States)

Majewski, Stanislaw; Kross, Brian J.; Zorn, Carl J.; Majewski, Lukasz A.

1996-01-01

An optimized examination system and method based on the Reverse Geometry X-Ray.RTM. (RGX.RTM.) radiography technique are presented. The examination system comprises a radiation source, at least one flexible, miniature radiation detector probe positioned in appropriate proximity to the object to be examined and to the radiation source with the object located between the source and the probe, a photodetector device attachable to an end of the miniature radiation probe, and a control unit integrated with a display device connected to the photodetector device. The miniature radiation detector probe comprises a scintillation element, a flexible light guide having a first end optically coupled to the scintillation element and having a second end attachable to the photodetector device, and an opaque, environmentally-resistant sheath surrounding the flexible light guide. The probe may be portable and insertable, or may be fixed in place within the object to be examined. An enclosed, flexible, liquid light guide is also presented, which comprises a thin-walled flexible tube, a liquid, preferably mineral oil, contained within the tube, a scintillation element located at a first end of the tube, closures located at both ends of the tube, and an opaque, environmentally-resistant sheath surrounding the flexible tube. The examination system and method have applications in non-destructive material testing for voids, cracks, and corrosion, and may be used in areas containing hazardous materials. In addition, the system and method have applications for medical and dental imaging.

Improvement of radiation response characteristic on CdTe detectors using fast neutron irradiation

International Nuclear Information System (INIS)

Miyamaru, Hiroyuki; Takahashi, Akito; Iida, Toshiyuki

1999-01-01

The treatment of fast neutron pre-irradiation was applied to a CdTe radiation detector in order to improve radiation response characteristic. Electron transport property of the detector was changed by the irradiation effect to suppress pulse amplitude fluctuation in risetime. Spectroscopic performance of the pre-irradiated detector was compared with the original. Additionally, the pre-irradiated detector was employed with a detection system using electrical signal processing of risetime discrimination (RTD). Pulse height spectra of 241 Am, 133 Ba, and 137 Cs gamma rays were measured to examine the change of the detector performance. The experimental results indicated that response characteristic for high-energy photons was improved by the pre-irradiation. The combination of the pre-irradiated detector and the RTD processing was found to provide further enhancement of the energy resolution. Application of fast neutron irradiation effect to the CdTe detector was demonstrated. (author)

Simulation and measurement of total ionizing dose radiation induced image lag increase in pinned photodiode CMOS image sensors

Energy Technology Data Exchange (ETDEWEB)

Liu, Jing [School of Materials Science and Engineering, Xiangtan University, Hunan (China); State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China); Chen, Wei, E-mail: chenwei@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China); Wang, Zujun, E-mail: wangzujun@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China); Xue, Yuanyuan; Yao, Zhibin; He, Baoping; Ma, Wuying; Jin, Junshan; Sheng, Jiangkun; Dong, Guantao [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China)

2017-06-01

This paper presents an investigation of total ionizing dose (TID) induced image lag sources in pinned photodiodes (PPD) CMOS image sensors based on radiation experiments and TCAD simulation. The radiation experiments have been carried out at the Cobalt −60 gamma-ray source. The experimental results show the image lag degradation is more and more serious with increasing TID. Combining with the TCAD simulation results, we can confirm that the junction of PPD and transfer gate (TG) is an important region forming image lag during irradiation. These simulations demonstrate that TID can generate a potential pocket leading to incomplete transfer.

The ALICE Transition Radiation Detector: status and perspectives for Run II

CERN Document Server

Klein, Jochen

2016-01-01

The ALICE Transition Radiation Detector contributes to the tracking, particle identification, and triggering capabilities of the experiment. It is composed of six layers of multi-wire proportional chambers, each of which is preceded by a radiator and a Xe/CO$_2$-filled drift volume. The signal is sampled in timebins of 100~ns over the drift length which allows for the reconstruction of chamber-wise track segments, both online and offline. The particle identification is based on the specific energy loss of charged particles and additional transition radiation photons, the latter being a signature for electrons. The detector is segmented into 18 sectors, of which 13 were installed in Run I. The TRD was included in data taking since the LHC start-up and was successfully used for electron identification and triggering. During the Long Shutdown 1, the detector was completed and now covers the full azimuthal acceptance. Furthermore, the readout and trigger components were upgraded. When data taking was started for ...

Performance of an LPD prototype detector at MHz frame rates under Synchrotron and FEL radiation

Science.gov (United States)

Koch, A.; Hart, M.; Nicholls, T.; Angelsen, C.; Coughlan, J.; French, M.; Hauf, S.; Kuster, M.; Sztuk-Dambietz, J.; Turcato, M.; Carini, G. A.; Chollet, M.; Herrmann, S. C.; Lemke, H. T.; Nelson, S.; Song, S.; Weaver, M.; Zhu, D.; Meents, A.; Fischer, P.

2013-11-01

A MHz frame rate X-ray area detector (LPD — Large Pixel Detector) is under development by the Rutherford Appleton Laboratory for the European XFEL. The detector will have 1 million pixels and allows analogue storage of 512 images taken at 4.5 MHz in the detector front end. The LPD detector has 500 μm thick silicon sensor tiles that are bump bonded to a readout ASIC. The ASIC's preamplifier provides relatively low noise at high speed which results in a high dynamic range of 105 photons over an energy range of 5-20 keV. Small scale prototypes of 32 × 256 pixels (LPD 2-Tile detector) and 256 × 256 pixels (LPD supermodule detector) are now available for X-ray tests. The performance of prototypes of the detector is reported for first tests under synchrotron radiation (PETRA III at DESY) and Free-Electron-Laser radiation (LCLS at SLAC). The initial performance of the detector in terms of signal range and noise, radiation hardness and spatial and temporal response are reported. The main result is that the 4.5 MHz sampling detection chain is reliably working, including the analogue on-chip memory concept. The detector is at least radiation hard up to 5 MGy at 12 keV. In addition the multiple gain concept has been demonstrated over a dynamic range to 104 at 12 keV with a readout noise equivalent to < 1 photon rms in its most sensitive mode.

Semidetector-radiation detector arrangement, as well as its application in a tomographic scanner, in a device to determine radiation intensity or to measure the radiation penetration or absorption

International Nuclear Information System (INIS)

Kaufman, L.; Hosier, K.E. Jr.

1979-01-01

The CdTe detector or a plate with several CdTe or HgI 2 detectors is suitable for use in computer controlled tomographic X-ray scanners. The detector is used in connection with a pulsed radiation source (Am 241) and a frequency filter technique for measuring the resulting electrical charge pulse of the detector. Merely a narrow frequency band is selected according to the measured duration of the incident radiation pulses. (DG) [de

Calculating the Responses of Self-Powered Radiation Detectors.

Science.gov (United States)

Thornton, D. A.

Available from UMI in association with The British Library. The aim of this research is to review and develop the theoretical understanding of the responses of Self -Powered Radiation Detectors (SPDs) in Pressurized Water Reactors (PWRs). Two very different models are considered. A simple analytic model of the responses of SPDs to neutrons and gamma radiation is presented. It is a development of the work of several previous authors and has been incorporated into a computer program (called GENSPD), the predictions of which have been compared with experimental and theoretical results reported in the literature. Generally, the comparisons show reasonable consistency; where there is poor agreement explanations have been sought and presented. Two major limitations of analytic models have been identified; neglect of current generation in insulators and over-simplified electron transport treatments. Both of these are developed in the current work. A second model based on the Explicit Representation of Radiation Sources and Transport (ERRST) is presented and evaluated for several SPDs in a PWR at beginning of life. The model incorporates simulation of the production and subsequent transport of neutrons, gamma rays and electrons, both internal and external to the detector. Neutron fluxes and fuel power ratings have been evaluated with core physics calculations. Neutron interaction rates in assembly and detector materials have been evaluated in lattice calculations employing deterministic transport and diffusion methods. The transport of the reactor gamma radiation has been calculated with Monte Carlo, adjusted diffusion and point-kernel methods. The electron flux associated with the reactor gamma field as well as the internal charge deposition effects of the transport of photons and electrons have been calculated with coupled Monte Carlo calculations of photon and electron transport. The predicted response of a SPD is evaluated as the sum of contributions from individual

High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.

1991-11-01

Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

Radiation damage measurements in room temperature semiconductor radiation detectors

International Nuclear Information System (INIS)

Franks, L.A.; Olsen, R.W.; James, R.B.; Brunett, B.A.; Walsh, D.S.; Doyle, B.L.; Vizkelethy, G.; Trombka, J.I.

1998-01-01

The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI 2 ) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 10 p/cm 2 and significant bulk leakage after 10 12 p/cm 2 . CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 x 10 9 p/cm 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 10 10 n/cm 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 x 10 10 α/cm 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 x 10 9 α/cm 2 . CT detectors show resolution losses after fluences of 3 x 10 9 p/cm 2 at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 x 10 10 n/cm 2 . Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10 12 p/cm 2 and with 1.5 GeV protons at fluences up to 1.2 x 10 8 p/cm 2 . Neutron exposures at 8 MeV have been reported at fluences up to 10 15 n/cm 2 . No radiation damage was reported under these irradiation conditions

Ionization detector with improved radiation source

International Nuclear Information System (INIS)

Solomon, E.F.

1977-01-01

The detector comprises a chamber having at least one radiation source disposed therein. The chamber includes spaced collector plates which form a part of a detection circuit for sensing changes in the ionization current in the chamber. The radiation source in one embodiment is in the form of a wound wire or ribbon suitably supported in the chamber and preferably a source of beta particles. The chamber may also include an adjustable electrode and the source may function as an adjustable current source by forming the wire or ribbon in an eliptical shape and rotating the structure. In another embodiment the source has a random shape and is homogeneously disposed in the chamber. 13 claims, 5 drawing figures

Radiation damage monitoring in the ATLAS pixel detector

International Nuclear Information System (INIS)

Seidel, Sally

2013-01-01

We describe the implementation of radiation damage monitoring using measurement of leakage current in the ATLAS silicon pixel sensors. The dependence of the leakage current upon the integrated luminosity is presented. The measurement of the radiation damage corresponding to an integrated luminosity 5.6 fb −1 is presented along with a comparison to a model. -- Highlights: ► Radiation damage monitoring via silicon leakage current is implemented in the ATLAS (LHC) pixel detector. ► Leakage currents measured are consistent with the Hamburg/Dortmund model. ► This information can be used to validate the ATLAS simulation model.

Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinski (Finland); Singh, P; Engels, E Jr; Shepard, J; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

1993-03-01

AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a [sup 137]Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 Mrad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are discribed. (orig.).

Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

International Nuclear Information System (INIS)

Laakso, M.; Helsinki Univ.; Singh, P.; Engels, E. Jr.; Shepard, P.

1992-02-01

AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a 137 Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 MRad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are described. 13 refs

Design of a wire imaging synchrotron radiation detector

International Nuclear Information System (INIS)

Kent, J.; Gomez-Cadenas, J.J.; Hogan, A.; King, M.; Rowe, W.; Watson, S.; Von Zanthier, C.; Briggs, D.D.; Levi, M.

1990-01-01

This paper documents the design of a detector invented to measure the positions of synchrotron radiation beams for the precision energy spectrometers of the Stanford Linear Collider (SLC). The energy measurements involve the determination, on a pulse-by-pulse basis, of the separation of pairs of intense beams of synchrotron photons in the MeV energy range. The detector intercepts the beams with arrays of fine wires. The ejection of Compton recoil electrons results in charges being developed in the wires, thus enabling a determination of beam positions. 10 refs., 4 figs

Jagiellonian University Radiation Damage in Silicon Particle Detectors in High Luminosity Experiments

CERN Document Server

Oblakowska-Mucha, A

2017-01-01

Radiation damage is nowadays the most serious problem in silicon particle detectors placed in the very harsh radiation environment. This problem will be even more pronounced after the LHC Upgrade because of extremely strong particle fluences never encountered before. In this review, a few aspects of radiation damage in silicon trackers are presented. Among them, the change in the silicon lattice and its influence on the detector performance are discussed. Currently applied solutions and the new ideas for future experiments will be also shown. Most of the results presented in this summary were obtained within the RD50 Collaboration

Gaschromatographic proof of nitrous oxide concentrations in air by means of radiation ionization detectors

International Nuclear Information System (INIS)

Popp, P.; Schoentube, E.; Oppermann, G.

1985-01-01

For the analysis of nitrous oxide concentrations at workplaces in operating theatres, gaschromatography is a particularly suitable method if it is possible to measure nitrous oxide concentrations in the ppm to ppb region. For this, most frequently used gaschromatographic detectors (flame ionization detector, thermal conductivity detector) are unsuitable, whereas radiation ionization detectors can be used successfully. The investigations using detectors designed at the Central Institute for Isotopes and Radiation Research of the GDR Academy of Sciences showed that a high-temperature electron-capture detector (ECD), working at a temperatur of 250 0 C, enables the determination of traces of nitrous oxide with a detection limit of about 200 ppb, while the helium detector has a limit of 50 ppb of nitrous oxide in room air. Since the helium detector requires extremely pure carrier gas, the high-temperature ECD appears more suitable for analyzing nitrous oxide. (author)

Stable room-temperature thallium bromide semiconductor radiation detectors

Science.gov (United States)

Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

2017-10-01

Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

Stable room-temperature thallium bromide semiconductor radiation detectors

Directory of Open Access Journals (Sweden)

A. Datta

2017-10-01

Full Text Available Thallium bromide (TlBr is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br− species, with an estimated electro-diffusion velocity of 10−8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br− ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

A gas microstrip wide angle X-ray detector for application in synchrotron radiation experiments

CERN Document Server

Bateman, J E; Derbyshire, G E; Duxbury, D M; Lipp, J; Mir, J A; Simmons, J E; Spill, E J; Stephenson, R; Dobson, B R; Farrow, R C; Helsby, W I; Mutikainen, R; Suni, I

2002-01-01

The Gas Microstrip Detector has counting rate capabilities several orders of magnitude higher than conventional wire proportional counters while providing the same (or better) energy resolution for X-rays. In addition the geometric flexibility provided by the lithographic process combined with the self-supporting properties of the substrate offers many exciting possibilities for X-ray detectors, particularly for the demanding experiments carried out on Synchrotron Radiation Sources. Using experience obtained in designing detectors for Particle Physics we have developed a detector for Wide Angle X-ray Scattering studies. The detector has a fan geometry which makes possible a gas detector with high detection efficiency, sub-millimetre spatial resolution and good energy resolution over a wide range of X-ray energy. The detector is described together with results of experiments carried out at the Daresbury Laboratory Synchrotron Radiation Source.

Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

Energy Technology Data Exchange (ETDEWEB)

Wei, Qingyu

2008-10-17

The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

International Nuclear Information System (INIS)

Wei, Qingyu

2008-01-01

The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

Experiences with radiation portal detectors for international rail transport

International Nuclear Information System (INIS)

Stromswold, David C.; McCormick, Kathleen R.; Todd, Lindsay C.; Ashbaker, Eric D.; Evans, J.C.

2006-01-01

Radiation detectors monitored trains at two international borders to evaluate the performance of NaI(Tl) and plastic (polyvinyltoluene: PVT) gamma-ray detectors to characterize rail cargo. The detectors included a prototype NaI(Tl) radiation-portal-monitor panel having four large detectors (10-cm x 10-cm x 41-cm) and a PVT panel with a 41 cm x 173 cm x 3.8-cm detector. Spectral data from the NaI(Tl) and PVT detectors were recorded. Of particular emphasis was the identification of naturally occurring radioactive material (NORM) and the resultant frequency of nuisance alarms. For rail monitoring, the difficulty in stopping trains to perform secondary inspection on alarming cars creates a need for reliable identification of NORM during initial screening. Approximately 30 trains were monitored, and the commodities in individual railcars were ascertained from manifest information. At one test site the trains carried inter-modal containers that had been unloaded from ships, and at the other site the trains contained bulk cargo or individual items in boxcars or flatbeds. NORM encountered included potash, liquefied petroleum gas, fireworks, televisions, and clay-based products (e.g., pottery). Analysis of the spectral data included the use of the template-fitting program GADRAS/FitToDB from Sandia National Laboratories. For much of the NORM the NaI(Tl) data produced a correct identification of the radionuclides present in the railcars. The same analysis was also used for PVT data in which the spectral information (no peaks but only gradual spectral changes including Compton edges) was limited. However, the PVT analysis provided correct identification of 40K and 226Ra in many cases

Cadmium telluride gamma-radiation detectors with a high energy resolution

International Nuclear Information System (INIS)

Alekseeva, L.A.; Dorogov, P.G.; Ivanov, V.I.; Khusainov, A.K.

1985-01-01

This paper considers the possibility of improving the energy resolution of cadmium telluride gamma-radiation detectors through the choice of the geometry and size of the sensitive region of the detector. The optimum ratio of the product of the mobility and lifetime for electrons to the same product for holes from the point of view of energy resolution is greater than or equal to 10 2 for a detector of spherical geometry and should be less than or equal to 10 for a cylindrical geometry and approximately 1 for a planar geometry. The optimum values of the major and minor radii of a spherical detector are calculated

Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

International Nuclear Information System (INIS)

Knoll, G.F.

1995-11-01

The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with open-quotes single carrierclose quotes response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security

Technical Note: Response measurement for select radiation detectors in magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Reynolds, M., E-mail: michaelreynolds@ualberta.net [Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Fallone, B. G. [Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2, Canada and Departments of Oncology and Physics, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Rathee, S. [Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2, Canada and Department of Oncology, Medical Physics Division,University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada)

2015-06-15

Purpose: Dose response to applied magnetic fields for ion chambers and solid state detectors has been investigated previously for the anticipated use in linear accelerator–magnetic resonance devices. In this investigation, the authors present the measured response of selected radiation detectors when the magnetic field is applied in the same direction as the radiation beam, i.e., a longitudinal magnetic field, to verify previous simulation only data. Methods: The dose response of a PR06C ion chamber, PTW60003 diamond detector, and IBA PFD diode detector is measured in a longitudinal magnetic field. The detectors are irradiated with buildup caps and their long axes either parallel or perpendicular to the incident photon beam. In each case, the magnetic field dose response is reported as the ratio of detector signals with to that without an applied longitudinal magnetic field. The magnetic field dose response for each unique orientation as a function of magnetic field strength was then compared to the previous simulation only studies. Results: The measured dose response of each detector in longitudinal magnetic fields shows no discernable response up to near 0.21 T. This result was expected and matches the previously published simulation only results, showing no appreciable dose response with magnetic field. Conclusions: Low field longitudinal magnetic fields have been shown to have little or no effect on the dose response of the detectors investigated and further lend credibility to previous simulation only studies.

Evaluation of gamma dose effect on PIN photodiode using analytical model

Science.gov (United States)

Jafari, H.; Feghhi, S. A. H.; Boorboor, S.

2018-03-01

The PIN silicon photodiodes are widely used in the applications which may be found in radiation environment such as space mission, medical imaging and non-destructive testing. Radiation-induced damage in these devices causes to degrade the photodiode parameters. In this work, we have used new approach to evaluate gamma dose effects on a commercial PIN photodiode (BPX65) based on an analytical model. In this approach, the NIEL parameter has been calculated for gamma rays from a 60Co source by GEANT4. The radiation damage mechanisms have been considered by solving numerically the Poisson and continuity equations with the appropriate boundary conditions, parameters and physical models. Defects caused by radiation in silicon have been formulated in terms of the damage coefficient for the minority carriers' lifetime. The gamma induced degradation parameters of the silicon PIN photodiode have been analyzed in detail and the results were compared with experimental measurements and as well as the results of ATLAS semiconductor simulator to verify and parameterize the analytical model calculations. The results showed reasonable agreement between them for BPX65 silicon photodiode irradiated by 60Co gamma source at total doses up to 5 kGy under different reverse voltages.

The transition radiation detector of the PAMELA space mission

Science.gov (United States)

Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; de Marzo, C.; Giglietto, N.; Marangelli, B.; Mirizzi, N.; Romita, M.; Spinelli, P.

2004-04-01

PAMELA space mission objective is to flight a satellite-borne magnetic spectrometer built to fulfill the primary scientific goals of detecting antiparticles (antiprotons and positrons) and to measure spectra of particles in cosmic rays. The PAMELA telescope is composed of: a silicon tracker housed in a permanent magnet, a time-of-flight and an anticoincidence system both made of plastic scintillators, a silicon imaging calorimeter, a neutron detector and a Transition Radiation Detector (TRD). The TRD is composed of nine sensitive layers of straw tubes working in proportional mode for a total of 1024 channels. Each layer is interleaved with a radiator plane made of carbon fibers. The TRD characteristics will be described along with its performances studied at both CERN-PS and CERN-SPS facilities, using electrons, pions, muons and protons of different momenta.

The transition radiation detector of the PAMELA space mission

International Nuclear Information System (INIS)

Ambriola, M.; Bellotti, R.; Cafagna, F.; Circella, M.; De Marzo, C.; Giglietto, N.; Marangelli, B.; Mirizzi, N.; Romita, M.; Spinelli, P.

2004-01-01

PAMELA space mission objective is to flight a satellite-borne magnetic spectrometer built to fulfill the primary scientific goals of detecting antiparticles (antiprotons and positrons) and to measure spectra of particles in cosmic rays. The PAMELA telescope is composed of: a silicon tracker housed in a permanent magnet, a time-of-flight and an anticoincidence system both made of plastic scintillators, a silicon imaging calorimeter, a neutron detector and a Transition Radiation Detector (TRD). The TRD is composed of nine sensitive layers of straw tubes working in proportional mode for a total of 1024 channels. Each layer is interleaved with a radiator plane made of carbon fibers. The TRD characteristics will be described along with its performances studied at both CERN-PS and CERN-SPS facilities, using electrons, pions, muons and protons of different momenta

Fuel pin bowing and related investigation of WWER-440 control rod influence on power release inside of neighbouring fuel pins

International Nuclear Information System (INIS)

Mikus, J.

2005-01-01

The purpose of this work consists in investigation of the WWER-440 control rod (CR) influence on space power distribution, especially from viewpoint of the values and gradient occurrence that could result in static and cyclic loads with some consequences, e.g. fuel pin bowing. As known, CR can cause power peaks in periphery fuel pins of adjacent operating assemblies because of the butt joint design of the absorbing adapter to the CR fuel part, that is, presence of the water cavity resulting in a flash up of thermal neutrons. As a consequence, beside well-known peaks in axial power distribution, above power gradients can occur inside of mentioned fuel pins. Because of complicated geometry and material composition of the CR, the detailed calculations concerning both above phenomena are complicated, too. Therefore it is useful to acquire appropriate experimental data to investigate mentioned influence and compare them with calculations. Since detailed power distributions cannot be obtained in the NPP, needed information is provided by means of experiments on research reactors. In case of measurements inside of fuel pins, special (e.g. track) detectors placed between fuel pellets are used. Such works are relatively complicated and time consuming, therefore an evaluation based on mathematical modelling and numerical approximation was proposed by means of that, and using measured power release in some selected fuel pins, information about power release inside of one of these fuel pins, can be obtained. For this purpose, an experiment on light water, zero-power research reactor LR-0 was realized and axial power distribution measurements were performed in a WWER-440 type core near to an authentic CR model. Application of the above evaluation method is demonstrated on one ''investigated'' fuel pin neighbouring CR by means of following results: 1. Axial power distribution inside of investigated fuel pin in two opposite positions on its pellets surface that are situated to

Schottky barrier CdTe(Cl) detectors for planetary missions

International Nuclear Information System (INIS)