Radiation hardness properties of full-3D active edge silicon sensors

Czech Academy of Sciences Publication Activity Database

Da Via, C.; Hasi, J.; Kenney, C.; Linhart, V.; Parker, S.; Slavíček, T.; Watts, S. J.; Bém, Pavel; Horažďovský, T.; Pospíšil, S.

2008-01-01

Roč. 587, 2-3 (2008), s. 243-249 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : silicon detectors * radiation hardness * 3D Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.019, year: 2008

Characterisation and application of radiation hard sensors for LHC and ILC

International Nuclear Information System (INIS)

Novgorodova, Olga

2013-11-01

The Large Hadron Collider (LHC) currently in operation intends to explore particle physics on the TeV scale. The International Linear Collider (ILC) and the Compact Linear Collider (CLIC) are being designed to measure the properties of particles discovered at the LHC with higher precision. Very forward detector systems at these machines are needed for the precise measurement of the luminosity and to approach full polar angle overage. In the current detector concepts for linear collider two electromagnetic calorimeters, Beam Calorimeter (BeamCal) and Luminosity Calorimeter (LumiCal), are foreseen. Both calorimeters are designed as sandwich calorimeters with tungsten absorber layers instrumented with finely segmented sensors. Due to a large amount of beamstrahlung remnants hitting BeamCal at the innermost radii, the sensors must withstand up to 1 MGy radiation dose per year. In this thesis two types of sensor materials were investigated: single crystal chemical vapour deposition diamonds (scCVDD) and gallium arsenide doped by chromium (GaAs:Cr). The very forward calorimeters ensure coverage for high energy electrons, positrons and photons down to very low polar angles. Within this thesis, simulation studies are presented for different beam parameters of the ILC. A new sensor segmentation was proposed to achieve better reconstruction efficiency of single high-energy electrons, positrons and photons on top of the beamstrahlung background. Only for a few years ago polycrystalline diamond sensors have been used for beam diagnostics in high-energy physics experiments. The Compact Muon Solenoid experiment, CMS, at the LHC is instrumented with several detectors for the Beam Conditions and Radiation Monitoring. The Fast Beam Conditions Monitor (BCM1F) is part of these systems. Here for the first time single crystal diamond sensors have been used. Eight detectors, comprising each a single crystal sensor and front-end electronics, are positioned around the beam pipe on both

Characterisation and application of radiation hard sensors for LHC and ILC

Energy Technology Data Exchange (ETDEWEB)

Novgorodova, Olga

2013-11-15

The Large Hadron Collider (LHC) currently in operation intends to explore particle physics on the TeV scale. The International Linear Collider (ILC) and the Compact Linear Collider (CLIC) are being designed to measure the properties of particles discovered at the LHC with higher precision. Very forward detector systems at these machines are needed for the precise measurement of the luminosity and to approach full polar angle overage. In the current detector concepts for linear collider two electromagnetic calorimeters, Beam Calorimeter (BeamCal) and Luminosity Calorimeter (LumiCal), are foreseen. Both calorimeters are designed as sandwich calorimeters with tungsten absorber layers instrumented with finely segmented sensors. Due to a large amount of beamstrahlung remnants hitting BeamCal at the innermost radii, the sensors must withstand up to 1 MGy radiation dose per year. In this thesis two types of sensor materials were investigated: single crystal chemical vapour deposition diamonds (scCVDD) and gallium arsenide doped by chromium (GaAs:Cr). The very forward calorimeters ensure coverage for high energy electrons, positrons and photons down to very low polar angles. Within this thesis, simulation studies are presented for different beam parameters of the ILC. A new sensor segmentation was proposed to achieve better reconstruction efficiency of single high-energy electrons, positrons and photons on top of the beamstrahlung background. Only for a few years ago polycrystalline diamond sensors have been used for beam diagnostics in high-energy physics experiments. The Compact Muon Solenoid experiment, CMS, at the LHC is instrumented with several detectors for the Beam Conditions and Radiation Monitoring. The Fast Beam Conditions Monitor (BCM1F) is part of these systems. Here for the first time single crystal diamond sensors have been used. Eight detectors, comprising each a single crystal sensor and front-end electronics, are positioned around the beam pipe on both

Radiation hardness of CMS pixel barrel modules

CERN Document Server

Rohe, T; Erdmann, W; Kästli, H C; Khalatyan, S; Meier, B; Radicci, V; Sibille, J

2010-01-01

Pixel detectors are used in the innermost part of the multi purpose experiments at LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of all detector components has thoroughly been tested up to the fluences expected at the LHC. In case of an LHC upgrade, the fluence will be much higher and it is not yet clear how long the present pixel modules will stay operative in such a harsh environment. The aim of this study was to establish such a limit as a benchmark for other possible detector concepts considered for the upgrade. As the sensors and the readout chip are the parts most sensitive to radiation damage, samples consisting of a small pixel sensor bump-bonded to a CMS-readout chip (PSI46V2.1) have been irradiated with positive 200 MeV pions at PSI up to 6E14 Neq and with 21 GeV protons at CERN up to 5E15 Neq. After irradiation the response of the system to beta particles from a Sr-90 source w...

Review of the development of diamond radiation sensors

International Nuclear Information System (INIS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.

1999-01-01

Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 μm have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9x10 15 π cm -2 , 5x10 15 p cm -2 and 1.35x10 15 n cm -2 , respectively. Diamond micro-strip detectors with 50 μm pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2x4 cm 2 surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out chip prototypes for ATLAS and CMS. Beam test results are shown from a diamond detector bump-bonded to an ATLAS prototype read-out. They demonstrate a 98% bump-bonding efficiency and a digital resolution in both dimensions. (author)

Review of the development of diamond radiation sensors

Science.gov (United States)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-09-01

Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 μm have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9×10 15 π cm -2, 5×10 15 p cm -2 and 1.35×10 15 n cm -2, respectively. Diamond micro-strip detectors with 50 μm pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2×4 cm 2 surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out chip prototypes for ATLAS and CMS. Beam test results are shown from a diamond detector bump-bonded to an ATLAS prototype read-out. They demonstrate a 98% bump-bonding efficiency and a digital resolution in both dimensions.

Process and devices of detection of hard electromagnetic or particle radiations using a superconducting element

International Nuclear Information System (INIS)

Drukier, A.K.; Valette, Claude; Waysand, Georges.

1975-01-01

The invention relates to processes and systems for the detection of hard electromagnetic or particle radiations and the sensors fitted to these systems. 'Hard radiations' means those whose energy is greater than a variable threshold, depending on the applications, but always more than 5 keV. The use of these sensors and the associated systems can therefore be envisaged in radiography and also in emission gammagraphy in the biological, anatomic and medical fields. In these processes, in order to detect a photon or a radiation particle, use is made of the transition phenomenon of a homogeneous grain of superconducting material of the first kind, from the metastable superconducting state to the normal state, under the effect of a photoelectron ejected by the impact of the photon or of the particle on the grain of superconducting material [fr

Review of the development of diamond radiation sensors

Energy Technology Data Exchange (ETDEWEB)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J. E-mail: josel.hrubec@cern.ch; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

1999-09-11

Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 {mu}m have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9x10{sup 15} {pi} cm{sup -2}, 5x10{sup 15} p cm{sup -2} and 1.35x10{sup 15} n cm{sup -2}, respectively. Diamond micro-strip detectors with 50 {mu}m pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2x4 cm{sup 2} surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out chip prototypes for ATLAS and CMS. Beam test results are shown from a diamond detector bump-bonded to an ATLAS prototype read-out. They demonstrate a 98% bump-bonding efficiency and a digital resolution in both dimensions. (author)

Ways of providing radiation resistance of magnetic field semiconductor sensors

CERN Document Server

Bolshakova, I A; Holyaka, R; Matkovskii, A; Moroz, A

2001-01-01

Hall magnetic field sensors resistant to hard ionizing irradiation are being developed for operation under the radiation conditions of space and in charged particle accelerators. Radiation resistance of the sensors is first determined by the properties of semiconductor materials of sensitive elements; we have used microcrystals and thin layers of III-V semiconductors. Applying complex doping by rare-earth elements and isovalent impurities in certain proportions, we have obtained magnetic field sensors resistant to irradiation by fast neutrons and gamma-quanta. Tests of their radiation resistance were carried out at IBR-2 at the Joint Institute for Nuclear Research (Dubna). When exposed to neutrons with E=0.1-13 MeV and intensity of 10 sup 1 sup 0 n cm sup - sup 2 s sup - sup 1 , the main parameter of the sensors - their sensitivity to magnetic fields - changes by no more than 0.1% up to fluences of 10 sup 1 sup 4 n cm sup - sup 2. Further improvement of radiation resistance of sensor materials is expected by ...

Radiation-Hard Quartz Cerenkov Calorimeters

International Nuclear Information System (INIS)

Akgun, U.; Onel, Y.

2006-01-01

New generation hadron colliders are going to reach unprecedented energies and radiation levels. Quartz has been identified as a radiation-hard material that can be used for Cerenkov calorimeters of the future experiments. We report from the radiation hardness tests performed on quartz fibers, as well as the characteristics of the quartz fiber and plate Cerenkov calorimeters that have been built, designed, and proposed for the CMS experiment

CMOS optimization for radiation hardness

International Nuclear Information System (INIS)

Derbenwick, G.F.; Fossum, J.G.

1975-01-01

Several approaches to the attainment of radiation-hardened MOS circuits have been investigated in the last few years. These have included implanting the SiO 2 gate insulator with aluminum, using chrome-aluminum layered gate metallization, using Al 2 O 3 as the gate insulator, and optimizing the MOS fabrication process. Earlier process optimization studies were restricted primarily to p-channel devices operating with negative gate biases. Since knowledge of the hardness dependence upon processing and design parameters is essential in producing hardened integrated circuits, a comprehensive investigation of the effects of both process and design optimization on radiation-hardened CMOS integrated circuits was undertaken. The goals are to define and establish a radiation-hardened processing sequence for CMOS integrated circuits and to formulate quantitative relationships between process and design parameters and the radiation hardness. Using these equations, the basic CMOS design can then be optimized for radiation hardness and some understanding of the basic physics responsible for the radiation damage can be gained. Results are presented

Radiation hardness of CMS pixel barrel modules

International Nuclear Information System (INIS)

Rohe, T.; Bean, A.; Erdmann, W.; Kaestli, H.-C.; Khalatyan, S.; Meier, B.; Radicci, V.; Sibille, J.

2010-01-01

Pixel detectors are used in the innermost part of the multi purpose experiments at the LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of all detector components has been thoroughly tested up to the fluences expected at the LHC. In case of an LHC upgrade, the fluence will be much higher and it is not yet clear how long the present pixel modules will stay operative in such a harsh environment. The aim of this study was to establish such a limit as a benchmark for other possible detector concepts considered for the upgrade. As the sensors and the readout chip are the parts most sensitive to radiation damage, samples consisting of a small pixel sensor bump-bonded to a CMS-readout chip (PSI46V2.1) have been irradiated with positive 200 MeV pions at PSI up to 6x10 14 n eq /cm 2 and with 21 GeV protons at CERN up to 5x10 15 n eq /cm 2 . After irradiation the response of the system to beta particles from a 90 Sr source was measured to characterise the charge collection efficiency of the sensor. Radiation induced changes in the readout chip were also measured. The results show that the present pixel modules can be expected to be still operational after a fluence of 2.8x10 15 n eq /cm 2 . Samples irradiated up to 5x10 15 n eq /cm 2 still see the beta particles. However, further tests are needed to confirm whether a stable operation with high particle detection efficiency is possible after such a high fluence.

Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons

Energy Technology Data Exchange (ETDEWEB)

Šagátová, Andrea, E-mail: andrea.sagatova@stuba.sk [Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); University Centre of Electron Accelerators, Slovak Medical University, Ku kyselke 497, 911 06 Trenčín (Slovakia); Zaťko, Bohumír; Dubecký, František [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Ly Anh, Tu [Faculty of Applied Science, University of Technology VNU HCM, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Nečas, Vladimír; Sedlačková, Katarína; Pavlovič, Márius [Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Fülöp, Marko [University Centre of Electron Accelerators, Slovak Medical University, Ku kyselke 497, 911 06 Trenčín (Slovakia)

2017-02-15

Highlights: • Radiation hardness of SI GaAs detectors against gamma-rays, neutrons and electrons was compared. • Good agreement was achieved between the experimental results and displacement damage factor of different types of radiation. • CCE and FWHM first slightly improved (by 1–8%) and just then degraded with the cumulative dose. • An increase of detection efficiency with cumulative dose was observed. - Abstract: Radiation hardness of semi-insulating GaAs detectors against {sup 60}Co gamma-rays, fast neutrons and 5 MeV electrons was compared. Slight improvements in charge collection efficiency (CCE) and energy resolution in FWHM (Full Width at Half Maximum) were observed at low doses with all kinds of radiation followed by their degradation. The effect occurred at a dose of about 10 Gy of neutrons (CCE improved by 1%, FWHM by 5% on average), at 1 kGy of electrons (FWHM decreased by 3% on average) and at 10 kGy of gamma-rays (CCE raised by 5% and FWHM dropped by 8% on average), which is in agreement with the relative displacement damage of the used types of radiation. Gamma-rays of MeV energies are 1000-times less damaging than similar neutrons and electrons about 10-times more damaging than photons. On irradiating the detectors with neutrons and electrons, we observed a global increase in their detection efficiency, which was caused probably by enlargement of the active detector area as a consequence of created radiation defects in the base material. Detectors were still functional after a dose of 1140 kGy of ∼1 MeV photons, 104 kGy of 5 MeV electrons but only up to 0.576 kGy of fast (∼2 to 30 MeV) neutrons.

Micro-discharge noise and radiation damage of silicon microstrip sensors

International Nuclear Information System (INIS)

Ohsugi, T.; Iwata, Y.; Ohyama, H.; Ohmoto, T.; Yoshikawa, M.; Handa, T.; Kurino, K.; Fujita, K.; Kitabayashi, H.; Tamura, N.; Hatakenaka, T.; Maeohmichi, M.; Takahata, M.; Nakao, M.; Iwasaki, H.; Kohriki, T.; Terada, S.; Unno, Y.; Takashima, R.; Yamamoto, K.; Yamamura, K.

1996-01-01

We have examined experimentally some existing ideas for improving the radiation hardness of silicon microstrip sensors. We confirm that the extended electrode and the deep implant-strip proposed on the basis of simulation studies works effectively to suppress micro-discharge as well as junction breakdown of the bias or guard ring. For an integrated coupling capacitor a double layer structure of SiO 2 and Si 3 N 4 provides better radiation hardness than that of single SiO 2 coupling in our design conditions. The onset voltage of the micro-discharge on the bias/guard ring has been studied for an extended electrode and a floating guard ring. (orig.)

Total dose radiation effects of pressure sensors fabricated on uni-bond-SOI materials

International Nuclear Information System (INIS)

Zhu Shiyang; Huang Yiping; Wang Jin; Li Anzhen; Shen Shaoqun; Bao Minhang

2001-01-01

Piezoresistive pressure sensors with a twin-island structure were successfully fabricated using high quality Uni-bond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO 2 , the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60 Co γ-rays up to 2.3 x 10 4 Gy(H 2 O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition

Radiation hardness of undoped BGO crystals

International Nuclear Information System (INIS)

Sahu, S.K.; Peng, K.C.; Huang, H.C.; Wang, C.H.; Chang, Y.H.; Hou, W.S.; Ueno, K.; Chou, F.I.; Wei, Y.Y.

1997-01-01

We measured the radiation hardness of undoped BGO crystals from two different manufacturers. Such crystals are proposed to be used in a small-angle calorimeter of the BELLE detector of the KEK B-factory. Transparency and scintillation light output of the crystals were monitored to see the effect of radiation damage. The crystals show considerable radiation hardness up to 10.2 Mrad equivalent dose, which is much higher than the maximum expected dosage of 500 krad per year of running at BELLE. (orig.)

Wireless radiation sensor

Science.gov (United States)

Lamberti, Vincent E.; Howell, Jr, Layton N.; Mee, David K.; Kress, Reid L.

2016-08-09

Disclosed is a sensor for detecting radiation. The sensor includes a ferromagnetic metal and a radiation sensitive material coupled to the ferromagnetic metal. The radiation sensitive material is operable to change a tensile stress of the ferromagnetic metal upon exposure to radiation. The radiation is detected based on changes in the magnetic switching characteristics of the ferromagnetic metal caused by the changes in the tensile stress.

Distributed data fusion across multiple hard and soft mobile sensor platforms

Science.gov (United States)

Sinsley, Gregory

is a younger field than centralized fusion. The main issues in distributed fusion that are addressed are distributed classification and distributed tracking. There are several well established methods for performing distributed fusion that are first reviewed. The chapter on distributed fusion concludes with a multiple unmanned vehicle collaborative test involving an unmanned aerial vehicle and an unmanned ground vehicle. The third issue this thesis addresses is that of soft sensor only data fusion. Soft-only fusion is a newer field than centralized or distributed hard sensor fusion. Because of the novelty of the field, the chapter on soft only fusion contains less background information and instead focuses on some new results in soft sensor data fusion. Specifically, it discusses a novel fuzzy logic based soft sensor data fusion method. This new method is tested using both simulations and field measurements. The biggest issue addressed in this thesis is that of combined hard and soft fusion. Fusion of hard and soft data is the newest area for research in the data fusion community; therefore, some of the largest theoretical contributions in this thesis are in the chapter on combined hard and soft fusion. This chapter presents a novel combined hard and soft data fusion method based on random set theory, which processes random set data using a particle filter. Furthermore, the particle filter is designed to be distributed across multiple robots and portable computers (used by human observers) so that there is no centralized failure point in the system. After laying out a theoretical groundwork for hard and soft sensor data fusion the thesis presents practical applications for hard and soft sensor data fusion in simulation. Through a series of three progressively more difficult simulations, some important hard and soft sensor data fusion capabilities are demonstrated. The first simulation demonstrates fusing data from a single soft sensor and a single hard sensor in

Development of high temperature, radiation hard detectors based on diamond

Energy Technology Data Exchange (ETDEWEB)

Metcalfe, Alex, E-mail: Alex.Metcalfe@brunel.ac.uk [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Fern, George R. [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Hobson, Peter R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Ireland, Terry; Salimian, Ali; Silver, Jack [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Smith, David R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Lefeuvre, Gwenaelle [Micron Semiconductor Ltd., Lancing BN15 8 SJ (United Kingdom); Saenger, Richard [Schlumberger Limited, 91240 Clamart (France)

2017-02-11

Single crystal CVD diamond has many desirable properties compared to current, well developed, detector materials; exceptional radiation, chemical and physical hardness, chemical inertness, low Z (close to human tissue, good for dosimetry), wide bandgap and an intrinsic pathway to fast neutron detection through the {sup 12}C(n,α){sup 9}Be reaction. However effective exploitation of these properties requires development of a suitable metallisation scheme to give stable contacts for high temperature applications. To best utilise available processing techniques to optimise sensor response through geometry and conversion media configurations, a reliable model is required. This must assess the performance in terms of spectral response and overall efficiency as a function of detector and converter geometry. The same is also required for proper interpretation of experimental data. Sensors have been fabricated with varying metallisation schemes indented to permit high temperature operation; Present test results indicate that viable fabrication schemes for high temperature contacts have been developed and present modelling results, supported by preliminary data from partners indicate simulations provide a useful representation of response. - Highlights: • Radiation sensors using diamond as the sensitive volume have been constructed. • Functionality of these sensors with minimal degradation has been confirmed at 100 °C. • Sensitisation to thermal neutrons by addition of conversion layers has been modelled. • Modelling suggests 4× efficiency improvements from 3d converter-substrate interfaces.

Radiation hard silicon microstrip detectors for Tevatron experiments

International Nuclear Information System (INIS)

Korjenevski, Sergey

2004-01-01

The Silicon Microstrip Tracking detectors at the CDF and D0 experiments have now been operating for almost three years at Fermilab. These detectors were designed originally for an integrated luminosity of 2fb -1 . As the expected luminosity for Run IIb at the Tevatron collider was initially envisioned to reach 15fb -1 , radiation tolerances of both devices were revisited, culminating in proposals for new systems. With reduced expectations for total luminosity at ∼6fb -1 , the full detector-replacement projects were terminated. The CDF detector is expected nevertheless to cope efficiently with the lower anticipated dose, however, the D0 experiment is planning a smaller-scale project: a Layer-0 (L0) upgrade of the silicon tracker (D0SMT). The new device will fit between the beam line and the inner layer of the current Tracker. Built of single-sided sensors, this upgrade is expected to perform well in the harsh radiation environment, and be able to withstand an integrated luminosity of 15fb -1 . Prototypes of Run IIb sensors were irradiated using 10MeV protons at the tandem Van de Graaff at the James R. McDonald Laboratory at Kansas State University. A fit to the 10MeV proton data yields a damage parameter αp=11x10-17Acm. This is consistent with results from RD48 (αp=9.9x10-17Acm). The scaling of damage to 1MeV neutron fluence uses a hardness factor (κ) derived from the non-ionizing components of the energy loss (NEIL). NEIL predicts a hardness factor of 3.87 for 10MeV protons. We obtained an experimental value of this factor of 2.54, or 34% smaller than scaling predictions from NEIL

Radiation hard 3D diamond sensors for vertex detectors at HL-LHC

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00336619; Quadt, Arnulf; Grosse-Knetter, Jörn; Weingarten, Jens

Diamond is a good candidate to replace silicon as sensor material in the innermost layer of a tracking detector at HL-LHC, due to its high radiation tolerance. After particle fluences of $10^{16}\\,{\\rm protons/cm^2}$, diamond sensors are expected to achieve a higher signal to noise ratio than silicon. In order to use low grade polycrystalline diamonds as sensors, electrodes inside the diamond bulk, so called 3D electrodes, are produced. Typically, this kind of diamond material has a lower charge collection distance (CCD) than higher grade diamond, which results in a decreased signal amplitude. With 3D electrodes it is possible to achieve full charge collection even in samples with low CCDs by decoupling the spacing of the electrodes from the thickness of the diamond bulk. The electrodes are produced using a femtosecond laser, which changes the phase of the diamond material. The phase changed material is conductive and identified as nanocrystalline graphite using Raman spectroscopy. Due to a crater like struct...

Radiation sensor

International Nuclear Information System (INIS)

Brown, W.L.; Geronime, R.L.

1977-01-01

Radiation sensor and thermocouple, respectively, which can be used for reactor in-core instrumentation. The radiation sensor consists of an inconel conductor wire and rhodium emitter wire, the thermocouple of two intertwined alumel or chromel wires. Both are arranged in the center of a metal tube relative to which they are separated by an insulator made of SiO 2 fibers. This insulator is first introduced as a loose fabric between the radiation sensor and the thermocouple, respectively, and the metal tube and then compacted to a density of 35-73% of pure SiO 2 by drawing the tube. There is no need for soldering or welding. The insulation resistivity at room temperature ist between 10 14 and 10 15 ohms. (ORU) [de

Tactile sensor of hardness recognition based on magnetic anomaly detection

Science.gov (United States)

Xue, Lingyun; Zhang, Dongfang; Chen, Qingguang; Rao, Huanle; Xu, Ping

2018-03-01

Hardness, as one kind of tactile sensing, plays an important role in the field of intelligent robot application such as gripping, agricultural harvesting, prosthetic hand and so on. Recently, with the rapid development of magnetic field sensing technology with high performance, a number of magnetic sensors have been developed for intelligent application. The tunnel Magnetoresistance(TMR) based on magnetoresistance principal works as the sensitive element to detect the magnetic field and it has proven its excellent ability of weak magnetic detection. In the paper, a new method based on magnetic anomaly detection was proposed to detect the hardness in the tactile way. The sensor is composed of elastic body, ferrous probe, TMR element, permanent magnet. When the elastic body embedded with ferrous probe touches the object under the certain size of force, deformation of elastic body will produce. Correspondingly, the ferrous probe will be forced to displace and the background magnetic field will be distorted. The distorted magnetic field was detected by TMR elements and the output signal at different time can be sampled. The slope of magnetic signal with the sampling time is different for object with different hardness. The result indicated that the magnetic anomaly sensor can recognize the hardness rapidly within 150ms after the tactile moment. The hardness sensor based on magnetic anomaly detection principal proposed in the paper has the advantages of simple structure, low cost, rapid response and it has shown great application potential in the field of intelligent robot.

Impact of aging on radiation hardness

International Nuclear Information System (INIS)

Shaneyfelt, M.R.; Winokur, P.S.; Fleetwood, D.M.

1997-01-01

Burn-in effects are used to demonstrate the potential impact of thermally activated aging effects on functional and parametric radiation hardness. These results have implications on hardness assurance testing. Techniques for characterizing aging effects are proposed

Relative hardness measurement of soft objects by a new fiber optic sensor

Science.gov (United States)

Ahmadi, Roozbeh; Ashtaputre, Pranav; Abou Ziki, Jana; Dargahi, Javad; Packirisamy, Muthukumaran

2010-06-01

The measurement of relative hardness of soft objects enables replication of human finger tactile perception capabilities. This ability has many applications not only in automation and robotics industry but also in many other areas such as aerospace and robotic surgery where a robotic tool interacts with a soft contact object. One of the practical examples of interaction between a solid robotic instrument and a soft contact object occurs during robotically-assisted minimally invasive surgery. Measuring the relative hardness of bio-tissue, while contacting the robotic instrument, helps the surgeons to perform this type of surgery more reliably. In the present work, a new optical sensor is proposed to measure the relative hardness of contact objects. In order to measure the hardness of a contact object, like a human finger, it is required to apply a small force/deformation to the object by a tactile sensor. Then, the applied force and resulting deformation should be recorded at certain points to enable the relative hardness measurement. In this work, force/deformation data for a contact object is recorded at certain points by the proposed optical sensor. Recorded data is used to measure the relative hardness of soft objects. Based on the proposed design, an experimental setup was developed and experimental tests were performed to measure the relative hardness of elastomeric materials. Experimental results verify the ability of the proposed optical sensor to measure the relative hardness of elastomeric samples.

Development of radiation hard components for remote maintenance

International Nuclear Information System (INIS)

Oka, Kiyoshi; Obara, Kenjiro; Kakudate, Satoshi; Tominaga, Ryuichiro; Akada, Tamio; Morita, Hirosuke.

1997-01-01

In International Thermonuclear Experimental Reactor (ITER), in-vessel remote-handling is inevitably required to assemble and maintain activated in-vessel components due to D-T operation. The components of the in-vessel remote-handling system must have sufficient radiation hardness to allow for operation under an intense gamma-ray radiation of over 30 kGy/h for periods up to more than 1,000 hours. To this end, extensive irradiation tests and quality improvements including the optimization of material composition have been conducted through the ITER R and D program in order to develop radiation hard components which satisfy radiation doses from 10 MGy to 100 MGy at the dose rate of 10 kGy/h. This paper outlines the latest status of the radiation hard component development that has been conducted as the Japan Home Team's contribution to ITER. The remote-handling components tested are categorized into either robotics, viewing systems or common components. The irradiation tests include commercial base products for screening both modified and newly developed products to improve their radiation hardness. (author)

Development of radiation hardness components for ITER remote maintenance

Energy Technology Data Exchange (ETDEWEB)

Obara, Kenjiro; Kakudate, Satoshi; Oka, Kiyoshi; Ito, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Yagi, Toshiaki; Morita, Yousuke

1998-04-01

In the ITER, in-vessel remote handling is required to assemble and maintain in-vessel components in DT operations. Since in-vessel remote handling systems must operate under intense gamma ray radiation exceeding 30 kGy/h, their components must have sufficiently high radiation hardness to allow maintenance long enough in ITER in-vessel environments. Thus, extensive radiation tests and quality improvement, including optimization of material compositions, have been conducted through the ITER R and D program to develop radiation hardness components that meet radiation doses from 10 to 100 MGy at 10 kGy/h. This paper presents the latest on radiation hardness component development conducted by the Japan Home Team as a contribution to the ITER. The remote handling components tested are categorized for use in robotic or viewing systems, or as common components. Radiation tests have been conducted on commercially available products for screening, on modified products, and on new products to improve the radiation hardness. (author)

Development of radiation hardness components for ITER remote maintenance

International Nuclear Information System (INIS)

Obara, Kenjiro; Kakudate, Satoshi; Oka, Kiyoshi; Ito, Akira; Yagi, Toshiaki; Morita, Yousuke

1998-01-01

In the ITER, in-vessel remote handling is required to assemble and maintain in-vessel components in DT operations. Since in-vessel remote handling systems must operate under intense gamma ray radiation exceeding 30 kGy/h, their components must have sufficiently high radiation hardness to allow maintenance long enough in ITER in-vessel environments. Thus, extensive radiation tests and quality improvement, including optimization of material compositions, have been conducted through the ITER R and D program to develop radiation hardness components that meet radiation doses from 10 to 100 MGy at 10 kGy/h. This paper presents the latest on radiation hardness component development conducted by the Japan Home Team as a contribution to the ITER. The remote handling components tested are categorized for use in robotic or viewing systems, or as common components. Radiation tests have been conducted on commercially available products for screening, on modified products, and on new products to improve the radiation hardness. (author)

Silicon sensors for trackers at high-luminosity environment

Energy Technology Data Exchange (ETDEWEB)

Peltola, Timo, E-mail: timo.peltola@helsinki.fi

2015-10-01

The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented. - Highlights: • An overview of the recent results from the RD50 collaboration. • Accuracy of TCAD simulations increased by including both bulk and surface damage. • Sensors with n-electrode readout and MCz material offer higher radiation hardness. • 3D detectors are a promising choice for the extremely high fluence environments. • Detectors with an enhanced charge carrier generation under systematic investigation.

Two-sensor control in active vibration isolation using hard mounts

NARCIS (Netherlands)

Beijen, M.A.; Tjepkema, D.; van Dijk, J.

To isolate precision machines from floor vibrations, active vibration isolators are often applied. In this paper, a two-sensor control strategy, based on acceleration feedback and force feedback, is proposed for an active vibration isolator using a single-axis active hard mount. The hard mount

Two-sensor control in active vibration isolation using hard mounts

NARCIS (Netherlands)

Beijen, M.A.; Tjepkema, D.; van Dijk, Johannes

2014-01-01

To isolate precision machines from floor vibrations, active vibration isolators are often applied. In this paper, a two-sensor control strategy, based on acceleration feedback and force feedback, is proposed for an active vibration isolator using a single-axis active hard mount. The hard mount

Silicon sensor probing and radiation studies for the LHCb silicon tracker

International Nuclear Information System (INIS)

Lois, Cristina

2006-01-01

The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

An investigation of medical radiation detection using CMOS image sensors in smartphones

Energy Technology Data Exchange (ETDEWEB)

Kang, Han Gyu [Department of Senior Healthcare, Graduate School of Eulji University, Daejeon 301-746 (Korea, Republic of); Song, Jae-Jun [Department of Otorhinolaryngology-Head & Neck Surgery, Korea University, Guro Hospital,148, Gurodong-ro, Guro-gu, Seoul 152-703 (Korea, Republic of); Lee, Kwonhee [Graduate Program in Bio-medical Science, Korea University, 2511 Sejong-ro, Sejong City 339-770 (Korea, Republic of); Nam, Ki Chang [Department of Medical Engineering, College of Medicine, Dongguk University, 32 Dongguk-ro, Goyang-si, Gyeonggi-do 410-820 (Korea, Republic of); Hong, Seong Jong; Kim, Ho Chul [Department of Radiological Science, Eulji University, 553 Yangji-dong, Sujeong-gu, Seongnam-si, Gyeonggi-do 431-713 (Korea, Republic of)

2016-07-01

Medical radiation exposure to patients has increased with the development of diagnostic X-ray devices and multi-channel computed tomography (CT). Despite the fact that the low-dose CT technique can significantly reduce medical radiation exposure to patients, the increasing number of CT examinations has increased the total medical radiation exposure to patients. Therefore, medical radiation exposure to patients should be monitored to prevent cancers caused by diagnostic radiation. However, without using thermoluminescence or glass dosimeters, it is hardly measure doses received by patients during medical examinations accurately. Hence, it is necessary to develop radiation monitoring devices and algorithms that are reasonably priced and have superior radiation detection efficiencies. The aim of this study is to investigate the feasibility of medical dose measurement using complementary metal oxide semiconductor (CMOS) sensors in smartphone cameras with an algorithm to extract the X-ray interacted pixels. We characterized the responses of the CMOS sensors in a smartphone with respect to the X-rays generated by a general diagnostic X-ray system. The characteristics of the CMOS sensors in a smartphone camera, such as dose response linearity, dose rate dependence, energy dependence, angular dependence, and minimum detectable activity were evaluated. The high energy gamma-ray of 662 keV from Cs-137 can be detected using the smartphone camera. The smartphone cameras which employ the developed algorithm can detect medical radiations.

An investigation of medical radiation detection using CMOS image sensors in smartphones

International Nuclear Information System (INIS)

Kang, Han Gyu; Song, Jae-Jun; Lee, Kwonhee; Nam, Ki Chang; Hong, Seong Jong; Kim, Ho Chul

2016-01-01

Medical radiation exposure to patients has increased with the development of diagnostic X-ray devices and multi-channel computed tomography (CT). Despite the fact that the low-dose CT technique can significantly reduce medical radiation exposure to patients, the increasing number of CT examinations has increased the total medical radiation exposure to patients. Therefore, medical radiation exposure to patients should be monitored to prevent cancers caused by diagnostic radiation. However, without using thermoluminescence or glass dosimeters, it is hardly measure doses received by patients during medical examinations accurately. Hence, it is necessary to develop radiation monitoring devices and algorithms that are reasonably priced and have superior radiation detection efficiencies. The aim of this study is to investigate the feasibility of medical dose measurement using complementary metal oxide semiconductor (CMOS) sensors in smartphone cameras with an algorithm to extract the X-ray interacted pixels. We characterized the responses of the CMOS sensors in a smartphone with respect to the X-rays generated by a general diagnostic X-ray system. The characteristics of the CMOS sensors in a smartphone camera, such as dose response linearity, dose rate dependence, energy dependence, angular dependence, and minimum detectable activity were evaluated. The high energy gamma-ray of 662 keV from Cs-137 can be detected using the smartphone camera. The smartphone cameras which employ the developed algorithm can detect medical radiations.

P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environment

CERN Document Server

AUTHOR|(CDS)2084505

2015-01-01

In order to determine the most radiation hard silicon sensors for the CMS Experiment after the Phase II Upgrade in 2023 a comprehensive study of silicon sensors after a fluence of up to $1.5\\times10^{15} n_{eq}/cm^{2}$ corresponding to $3000 fb^{-1}$ after the HL-LHC era has been carried out. The results led to the decision that the future Outer Tracker (20~cm${<}R{<}$110~cm) of CMS will consist of n-in-p type sensors. This technology is more radiation hard but also the manufacturing is more challenging compared to p-in-n type sensors due to additional process steps in order to suppress the accumulation of electrons between the readout strips. One possible isolation technique of adjacent strips is the p-stop structure which is a p-type material implantation with a certain pattern for each individual strip. However, electrical breakdown and charge collection studies indicate that the process parameters of the p-stop structure have to be carefully calibrated in order to achieve a sufficient strip isolatio...

Radiation hard memory cell and array thereof

International Nuclear Information System (INIS)

Gunckel, T.L. II; Rovell, A.; Nielsen, R.L.

1978-01-01

A memory cell configuration that is implemented to be relatively hard to the adverse effects of a nuclear event is discussed. The presently disclosed memory cell can be interconnected with other like memory cells to form a high speed radiation hard register file. Information is selectively written into and read out of a memory cell comprising the register file, which memory cell preserves previously stored data without alteration in the event of exposure to high levels of nuclear radiation

BaYb2F8, a new radiation hard Cherenkov radiator for electromagnetic calorimeters

International Nuclear Information System (INIS)

Aseev, A.A.; Devitsin, E.G.; Komar, A.A.; Kozlov, V.A.; Hovsepyan, Yu.I.; Potashov, S.Yu.; Sokolovsky, K.A.; Uvarova, T.V.; Vasilchenko, V.G.

1992-01-01

Radiation hardness and optical properties of a new Cherenkov radiator, heavy fluoride BaYb 2 F 8 doped with various elements, have been studied. The above mentioned crystal has the density of 7 g/cm 3 , the radiation length is 1.28 cm and the Moliere radius 2.44 cm. High radiation hardness has been demonstrated for BaYb 2 F 8 doped with Tm, Pr, Tb. (orig.)

Electric field deformation in diamond sensors induced by radiation defects

Energy Technology Data Exchange (ETDEWEB)

Kassel, Florian; Boer, Wim de; Boegelspacher, Felix; Dierlamm, Alexander; Mueller, Thomas; Steck, Pia [Institut fuer Experimentelle Kernphysik (IEKP), Karlsruher Institut fuer Technologie (KIT) (Germany); Dabrowski, Anne; Guthoff, Moritz [CERN (Switzerland)

2016-07-01

The BCML system is a beam monitoring device in the CMS experiment at the LHC. As detectors 32 poly-crystalline CVD diamond sensors are positioned in a ring around the beam pipe at a distance of ±1.8 m and ±14.4 m from the interaction point. The radiation hardness of the diamond sensors in terms of measured signal during operation was significantly lower than expected from laboratory measurements. At high particle rates, such as those occurring during the operation of the LHC, a significant fraction of the defects act as traps for charge carriers. This space charge modifies the electrical field in the sensor bulk leading to a reduction of the charge collection efficiency (CCE). A diamond irradiation campaign was started to investigate the rate dependent electrical field deformation with respect to the radiation damage. Besides the electrical field measurements via the Transient Current Technique, the CCE was measured. The experimental results were used to create an effective trap model that takes the radiation damage into account. Using this trap model the rate dependent electrical field deformation and the CCE were simulated with the software ''SILVACO TCAD''. This talk compares the experimental measurement results with the simulations.

The influence of hard-baking temperature applied for SU8 sensor layer on the sensitivity of capacitive chemical sensor

Science.gov (United States)

Klanjšek Gunde, Marta; Hauptman, Nina; Maček, Marijan; Kunaver, Matjaž

2009-06-01

SU8, the near-UV photosensitive epoxy-based polymer was used as a sensor layer in the capacitive chemical sensor, ready for integration with a generic double-metal CMOS technology. It was observed that the response of the sensor slowly increases with the temperature applied in hard-baking process as long as it remains below 300°C. At this temperature the response of the sensor abruptly increases and becomes almost threefold. It was shown that fully crosslinked structure of the sensor layer becomes opened and disordered when the sensor is hard-baked at temperatures between 300°C and 320°C, that is, still well below the degradation temperature of the polymer. These changes in chemical structure were analyzed by Fourier-transform infrared spectroscopy. The temperature-dependent changes of the sensor layer structure enable one to prepare a combination of capacitive chemical sensors with good discrimination between some volatile organic compounds.

Wireless passive radiation sensor

Science.gov (United States)

Pfeifer, Kent B; Rumpf, Arthur N; Yelton, William G; Limmer, Steven J

2013-12-03

A novel measurement technique is employed using surface acoustic wave (SAW) devices, passive RF, and radiation-sensitive films to provide a wireless passive radiation sensor that requires no batteries, outside wiring, or regular maintenance. The sensor is small (<1 cm.sup.2), physically robust, and will operate unattended for decades. In addition, the sensor can be insensitive to measurement position and read distance due to a novel self-referencing technique eliminating the need to measure absolute responses that are dependent on RF transmitter location and power.

Effect of gamma radiation on micromechanical hardness of lead-free solder joint

Energy Technology Data Exchange (ETDEWEB)

Paulus, Wilfred [Universiti Kebangsaan Malaysia, Bangi, 43600 Kajang, Selangor (Malaysia); Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor (Malaysia); Rahman, Irman Abdul; Jalar, Azman; Kamil, Insan; Bakar, Maria Abu [Universiti Kebangsaan Malaysia, Bangi, 43600 Kajang, Selangor (Malaysia); Yusoff, Wan Yusmawati Wan [Universiti Pertahanan Nasional Malaysia, Kem Sg. Besi, 57000 Kuala Lumpur (Malaysia)

2015-09-25

Lead-free solders are important material in nano and microelectronic surface mounting technology for various applications in bio medicine, environmental monitoring, spacecraft and satellite instrumentation. Nevertheless solder joint in radiation environment needs higher reliability and resistance to any damage caused by ionizing radiations. In this study a lead-free 99.0Sn0.3Ag0.7Cu wt.% (SAC) solder joint was developed and subjected to various doses of gamma radiation to investigate the effects of the ionizing radiation to micromechanical hardness of the solder. Averaged hardness of the SAC joint was obtained from nanoindentation test. The results show a relationship between hardness values of indentations and the increment of radiation dose. Highest mean hardness, 0.2290 ± 0.0270 GPa was calculated on solder joint which was exposed to 5 Gray dose of gamma radiation. This value indicates possible radiation hardening effect on irradiated solder. The hardness gradually decreased to 0.1933 ± 0.0210 GPa and 0.1631 ± 0.0173 GPa when exposed to doses 50 and 500 gray respectively. These values are also lower than the hardness of non irradiated sample which was calculated as 0.2084 ± 0.0.3633 GPa indicating possible radiation damage and needs further related atomic dislocation study.

Testing the radiation hardness of lead tungstate scintillating crystals

CERN Document Server

Shao, M; Li Chuan; Chen, H; Xu, Z Z; Wang, Z M

2000-01-01

Large Hadron Collider operation will produce a high radiation background. PbWO/sub 4/ crystals are selected as scintillators for the CMS electromagnetic calorimeter. To reach the precise requirement for energy measurements, a strict requirement for the radiation hardness is needed. In this paper, we present a method for evaluating the radiation hardness and its measurement. Results for several full size (23 cm length) lead tungstate crystals under Co/sup 60/ gamma - ray irradiation are given, investigating the light yield loss and its longitudinal uniformity. (8 refs).

Development of radiation hard components for ITER blanket remote handling system

Energy Technology Data Exchange (ETDEWEB)

Saito, Makiko, E-mail: saito.makiko@jaea.go.jp; Anzai, Katsunori; Maruyama, Takahito; Noguchi, Yuto; Ueno, Kenichi; Takeda, Nobukazu; Kakudate, Satoshi

2016-11-01

Highlights: • Clarify the components that will degrade by gamma ray irradiation. • Perform the irradiation tests to BRHS components. • Optimize the materials to increase the radiation hardness. - Abstract: The ITER blanket remote handling system (BRHS) will be operated in a high radiation environment (250 Gy/h max.) and must stably handle the blanket modules, which weigh 4.5 t and are more than 1.5 m in length, with a high degree of position and posture accuracy. The reliability of the system can be improved by reviewing the failure events of the system caused by high radiation. A failure mode and effects analysis (FMEA) identified failure modes and determined that lubricants, O-rings, and electric insulation cables were the dominant components affecting radiation hardness. Accordingly, we tried to optimize the lubricants and cables of the AC servo motors by using polyphenyl ether (PPE)-based grease and polyether ether ketone (PEEK), respectively. Materials containing radiation protective agents were also selected for the cable sheaths and O-rings to improve radiation hardness. Gamma ray irradiation tests were performed on these components and as a result, a radiation hardness of 8 MGy was achieved for the AC servo motors. On the other hand, to develop the radiation hardness and BRHS compatibility furthermore, the improvement of materials of cable and O ring were performed.

Integration of Radiation-Hard Magnetic Random Access Memory with CMOS ICs

CERN Document Server

Cerjan, C J

2000-01-01

The research undertaken in this LDRD-funded project addressed the joint development of magnetic material-based nonvolatile, radiation-hard memory cells with Sandia National Laboratory. Specifically, the goal of this project was to demonstrate the intrinsic radiation-hardness of Giant Magneto-Resistive (GMR) materials by depositing representative alloy combinations upon radiation-hardened silicon-based integrated circuits. All of the stated goals of the project were achieved successfully. The necessary films were successfully deposited upon typical integrated circuits; the materials retained their magnetic field response at the highest radiation doses; and a patterning approach was developed that did not degrade the as-fabricated properties of the underlying circuitry. These results establish the feasibility of building radiation-hard magnetic memory cells.

Evaluation of testing strategies for the radiation tolerant ATLAS n **+-in-n pixel sensor

CERN Document Server

Klaiber Lodewigs, Jonas M

2003-01-01

The development of particle tracker systems for high fluence environments in new high-energy physics experiments raises new challenges for the development, manufacturing and reliable testing of radiation tolerant components. The ATLAS pixel detector for use at the LHC, CERN, is designed to cover an active sensor area of 1.8 m**2 with 1.1 multiplied by 10 **8 read-out channels usable for a particle fluence up to 10 **1**5 cm**-**2 (1 MeV neutron equivalent) and an ionization dose up to 500 kGy of mainly charged hadron radiation. To cope with such a harsh environment the ATLAS Pixel Collaboration has developed a radiation hard n **+-in-n silicon pixel cell design with a standard cell size of 50 multiplied by 400 mum**2. Using this design on an oxygenated silicon substrate, sensor production has started in 2001. This contribution describes results gained during the development of testing procedures of the ATLAS pixel sensor and evaluates quality assurance procedures regarding their relevance for detector operati...

Radiation hardness of new Kuraray double cladded optical fibers

International Nuclear Information System (INIS)

Bedeschi, F.; Menzione, A.; Budagov, Yu.; Chirikov-Zorin, I.; Solov'ev, A.; Turchanovich, L.; Vasil'chenko, V.

1996-01-01

The radiation hardness of the new plastic scintillating and clear fibers irradiated by 137 Cs γ-flux and by pulsed reactor fast neutrons were investigated. All the studied fibers were of S-type (with S=70) and had a double cladding. Optical fibers degradation study after irradiation shows that the level of radiation hardness lower that what is expected from results of previous studies. 9 refs., 6 figs

Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

Energy Technology Data Exchange (ETDEWEB)

Jungmann-Smith, J. H., E-mail: jsmith@magnet.fsu.edu; Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G. [Paul Scherrer Institute, 5232 Villigen PSI (Switzerland); Cartier, S. [Paul Scherrer Institute, 5232 Villigen PSI (Switzerland); Institute for Biomedical Engineering, University and ETHZ, 8092 Zürich (Switzerland); Medjoubi, K. [Synchrotron Soleil, L’Orme des Merisiers, Saint-Aubin–BP 48, 91192 GIF-sur-Yvette Cedex (France)

2015-12-15

JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10{sup 4} photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm{sup 2} pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm{sup 2}. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

Study of planar pixel sensors hardener to radiations for the upgrade of the ATLAS vertex detector

International Nuclear Information System (INIS)

Benoit, M.

2011-05-01

In this work, we present a study, using TCAD (Technology Computer-Assisted Design) simulation, of the possible methods of designing planar pixel sensors by reducing their inactive area and improving their radiation hardness for use in the Insertable B-Layer (IBL) project and for SLHC upgrade phase for the ATLAS experiment. Different physical models available have been studied to develop a coherent model of radiation damage in silicon that can be used to predict silicon pixel sensor behavior after exposure to radiation. The Multi-Guard Ring Structure, a protection structure used in pixel sensor design was studied to obtain guidelines for the reduction of inactive edges detrimental to detector operation while keeping a good sensor behavior through its lifetime in the ATLAS detector. A campaign of measurement of the sensor process parameters and electrical behavior to validate and calibrate the TCAD simulation models and results are also presented. A model for diode charge collection in highly irradiated environment was developed to explain the high charge collection observed in highly irradiated devices. A simple planar pixel sensor digitization model to be used in test beam and full detector system is detailed. It allows for easy comparison between experimental data and prediction by the various radiation damage models available. The digitizer has been validated using test beam data for unirradiated sensors and can be used to produce the first full scale simulation of the ATLAS detector with the IBL that include sensor effects such as slim edge and thinning of the sensor. (author)

Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

CERN Document Server

Fretwurst, E; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A G; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, L; Dalla Betta, G F; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; González-Sevilla, S; Gorelov,I; Goss, J; Gouldwell-Bates, A; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, I; Lazanu, S; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Linhart, V; Litovchenko, P G; Litovchenko, A P; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Populea, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidela, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

2005-01-01

The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Furthe...

Comptonization of low-frequency radiation in accretion disks Angular distribution and polarization of hard X-ray radiation

International Nuclear Information System (INIS)

Suniaev, R.A.; Titarchuk, L.G.

1984-01-01

Analytical consideration is given to the comptonization of photons and its effects on the radiation emitted from accretion disks of compact X-ray sources, such as black holes and neutron stars. Attention is given to the photon distribution during escape from the disk, the angular distribution of hard radiation from the disk, the polarization of hard radiation and the electron temperature distribution over the optical depth. It is shown that the hard radiation spectrum is independent of the low-frequency photon source distribution. The angular distribution and polarization of the outgoing X-rays are a function of the optical depth. A Thomson approximation is used to estimate the angular distribution of the hard radiation and the polarization over the disk. The polarization results are compared with OSO-8 satellite data for Cyg X-1 and show good agreement at several energy levels. 17 references

Test on radiation-withstanding properties of sensors

International Nuclear Information System (INIS)

Yagi, Hideyuki; Kakuta, Tsunemi; Ara, Katsuyuki

1986-01-01

In order to use for the remote operation system or in-line measuring system in the facilities handling radioactive substances, the development of the sensors having strengthened radiation-withstanding performance has been advanced. As a part of it, efforts have been exerted to phenomenologically grasp the radiation effect on various sensors and their materials, and to acquire the basic data. Irradiation test was carried out on solid image pick-up elements, optical parts eddy current sensors, pressure sensitive rubber, photo-electric proximity sensors and others, and the knowledge on their deterioration was obtained. Besides, the sensors and video-cameras having improved radiation-withstanding performance were made for trial, and the performance was tested. The interim report on these test results is made. By a series of the irradiation tests reported here, the basic data required for giving the guideline to the development of radiation withstanding sensors were able to be obtained. But in the present irradiation test, the number of specimens was too small to assure the radiation withstanding performance. In order to improve further the radiation withstanding performance of these sensors, it is necessary to carry out the irradiation test on such elements as condensers, diodes and ICs to accumulate the basic data. (Kako, I.)

Silicon sensor technologies for ATLAS IBL upgrade

CERN Document Server

Grenier, P; The ATLAS collaboration

2011-01-01

New pixel sensors are currently under development for ATLAS Upgrades. The first upgrade stage will consist in the construction of a new pixel layer that will be installed in the detector during the 2013 LHC shutdown. The new layer (Insertable-B-Layer, IBL) will be inserted between the inner most layer of the current pixel detector and the beam pipe at a radius of 3.2cm. The expected high radiation levels require the use of radiation hard technology for both the front-end chip and the sensor. Two different pixel sensor technologies are envisaged for the IBL. The sensor choice will occur in July 2011. One option is developed by the ATLAS Planar Pixel Sensor (PPS) Collaboration and is based on classical n-in-n planar silicon sensors which have been used for the ATLAS Pixel detector. For the IBL, two changes were required: The thickness was reduced from 250 um to 200 um to improve the radiation hardness. In addition, so-called "slim edges" were designed to reduce the inactive edge of the sensors from 1100 um to o...

Study of surface properties of ATLAS12 strip sensors and their radiation resistance

Science.gov (United States)

Mikestikova, M.; Allport, P. P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Kuczewski, P.; Lynn, D.; Hommels, L. B. A.; Ullan, M.; Bloch, I.; Gregor, I. M.; Tackmann, K.; Hauser, M.; Jakobs, K.; Kuehn, S.; Mahboubi, K.; Mori, R.; Parzefall, U.; Clark, A.; Ferrere, D.; Sevilla, S. Gonzalez; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; McMullen, T.; McEwan, F.; O'Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Stastny, J.; Bevan, A.; Beck, G.; Milke, C.; Domingo, M.; Fadeyev, V.; Galloway, Z.; Hibbard-Lubow, D.; Liang, Z.; Sadrozinski, H. F.-W.; Seiden, A.; To, K.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Jinnouchi, O.; Hara, K.; Sato, K.; Hagihara, M.; Iwabuchi, S.; Bernabeu, J.; Civera, J. V.; Garcia, C.; Lacasta, C.; Marti i Garcia, S.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.

2016-09-01

A radiation hard n+-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the "ATLAS ITk Strip Sensor collaboration" and produced by Hamamatsu Photonics. Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in "punch-through protection" (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×1016 neq/cm2, by reactor neutron fluence of 1×1015 neq/cm2 and by gamma rays from 60Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07.

Shutdown and degradation: Space computers for nuclear application, verification of radiation hardness. Final report

International Nuclear Information System (INIS)

Eichhorn, E.; Gerber, V.; Schreyer, P.

1995-01-01

(1) Employment of those radiation hard electronics which are already known in military and space applications. (2) The experience in space-flight shall be used to investigate nuclear technology areas, for example, by using space electronics to prove the range of applications in nuclear radiating environments. (3) Reproduction of a computer developed for telecommunication satellites; proof of radiation hardness by radiation tests. (4) At 328 Krad (Si) first failure of radiation tolerant devices with 100 Krad (Si) hardness guaranteed. (5) Using radiation hard devices of the same type you can expect applications at doses of greater than 1 Mrad (Si). Electronic systems applicable for radiation categories D, C and lower part of B for manipulators, vehicles, underwater robotics. (orig.) [de

A MGy radiation-hardened sensor instrumentation link for nuclear reactor monitoring and remote handling

Energy Technology Data Exchange (ETDEWEB)

Verbeeck, Jens; Cao, Ying [KU Leuven - KUL, Div. LRD-MAGyICS, Kasteelpark Arenberg 10, 3001 Heverlee (Belgium); Van Uffelen, Marco; Mont Casellas, Laura; Damiani, Carlo; Morales, Emilio Ruiz; Santana, Roberto Ranz [Fusion for Energy - F4E, c/Josep,n deg. 2, Torres Diagonal Litoral, Ed. B3, 08019 Barcelona (Spain); Meek, Richard; Haist, Bernhard [Oxford Technologies Ltd. OTL, 7 Nuffield Way, Abingdon OX14 1RL (United Kingdom); De Cock, Wouter; Vermeeren, Ludo [SCK-CEN, Boeretang 200, 2400 Mol (Belgium); Steyaert, Michiel [KU Leuven, ESAT-MICAS, KasteelparkArenberg 10, 3001 Heverlee (Belgium); Leroux, Paul [KU Leuven, ESAT-MICAS, KasteelparkArenberg 10, 3001 Heverlee (Belgium)

2015-07-01

Decommissioning, dismantling and remote handling applications in nuclear facilities all require robotic solutions that are able to survive in radiation environments. Recently raised safety, radiation hardness and cost efficiency demands from both the nuclear regulatory and the society impose severe challenges in traditional methods. For example, in case of the dismantling of the Fukushima sites, solutions that survive accumulated doses higher than 1 MGy are mandatory. To allow remote operation of these tools in nuclear environments, electronics were used to be shielded with several centimeters of lead or even completely banned in these solutions. However, shielding electronics always leads to bulky and heavy solutions, which reduces the flexibility of robotic tools. It also requires longer repair time and produces extra waste further in a dismantling or decommissioning cycle. In addition, often in current reactor designs, due to size restrictions and the need to inspect very tight areas there are limitations to the use of shielding. A MGy radiation-hardened sensor instrumentation link developed by MAGyICS provides a solution to build a flexible, easy removable and small I and C module with MGy radiation tolerance without any shielding. Hereby it removes all these pains to implement electronics in robotic tools. The demonstrated solution in this poster is developed for ITER Remote Handling equipments operating in high radiation environments (>1 MGy) in and around the Tokamak. In order to obtain adequately accurate instrumentation and control information, as well as to ease the umbilical management, there is a need of front-end electronics that will have to be located close to those actuators and sensors on the remote handling tool. In particular, for diverter remote handling, it is estimated that these components will face gamma radiation up to 300 Gy/h (in-vessel) and a total dose of 1 MGy. The radiation-hardened sensor instrumentation link presented here, consists

Study of surface properties of ATLAS12 strip sensors and their radiation resistance

Energy Technology Data Exchange (ETDEWEB)

Mikestikova, M., E-mail: mikestik@fzu.cz [Academy of Sciences of the Czech Republic, Institute of Physics, Na Slovance 2, 18221 Prague 8 (Czech Republic); Allport, P.P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J.P.; Wilson, J.A. [School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT (United Kingdom); Kierstead, J.; Kuczewski, P.; Lynn, D. [Brookhaven National Laboratory, Physics Department and Instrumentation Division, Upton, NY 11973-5000 (United States); Hommels, L.B.A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ullan, M. [Centro Nacional de Microelectronica (IMB-CNM, CSIC), Campus UAB-Bellaterra, 08193 Barcelona (Spain); Bloch, I.; Gregor, I.M.; Tackmann, K. [DESY, Notkestrasse 85, 22607 Hamburg (Germany); Hauser, M.; Jakobs, K.; Kuehn, S. [Physikalisches Institut, Universität Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); and others

2016-09-21

A radiation hard n{sup +}-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the “ATLAS ITk Strip Sensor collaboration” and produced by Hamamatsu Photonics. Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in “punch-through protection” (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×10{sup 16} n{sub eq}/cm{sup 2}, by reactor neutron fluence of 1×10{sup 15} n{sub eq}/cm{sup 2} and by gamma rays from {sup 60}Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07. - Highlights: �

Acoustic emission sensor radiation damage threshold experiment

International Nuclear Information System (INIS)

Beeson, K.M.; Pepper, C.E.

1994-01-01

Determination of the threshold for damage to acoustic emission sensors exposed to radiation is important in their application to leak detection in radioactive waste transport and storage. Proper response to system leaks is necessary to ensure the safe operation of these systems. A radiation impaired sensor could provide ''false negative or false positive'' indication of acoustic signals from leaks within the system. Research was carried out in the Radiochemical Technology Division at Oak Ridge National Laboratory to determine the beta/gamma radiation damage threshold for acoustic emission sensor systems. The individual system consisted of an acoustic sensor mounted with a two part epoxy onto a stainless steel waveguide. The systems were placed in an irradiation fixture and exposed to a Cobalt-60 source. After each irradiation, the sensors were recalibrated by Physical Acoustics Corporation. The results were compared to the initial calibrations performed prior to irradiation and a control group, not exposed to radiation, was used to validate the results. This experiment determines the radiation damage threshold of each acoustic sensor system and verifies its life expectancy, usefulness and reliability for many applications in radioactive environments

Optical fiber composition and radiation hardness

International Nuclear Information System (INIS)

Wall, J.A.; Loretz, T.J.

1982-01-01

Germanium phosphosilicate and germanium borosilicate fibers doped with cerium were fabricated and tested for their responses to steady-state Co-60 radiation at -55 C, +20 C and +125 C. A fiber with germanium, boron and phosphorous in the silicate core and doped with antimony in the core and clad was similarly tested. All of the fibers showed significant improvements in radiation hardness at 20 C compared to undoped fibers of the same base composition. At -55 C, however, all except the cerium doped germanium phosphosilicate were very radiation sensitive and also showed increases in the rate of induced loss at +125 C. The cerium doped germanium phosphosilicate fiber showed virtually no change in radiation sensitivity at the temperature extremes and could prove useful in applications requiring relatively short lengths of fiber

Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip

International Nuclear Information System (INIS)

Platkevic, M; Jakubek, J; Jakubek, M; Pospisil, S; Zemlicka, J; Havranek, V; Semian, V

2013-01-01

Studies of radiation hardness of silicon sensors are standardly performed with single-pad detectors evaluating their global electrical properties. In this work we introduce a technique to visualize and determine the spatial distribution of radiation damage across the area of a semiconductor sensor. The sensor properties such as charge collection efficiency and charge diffusion were evaluated locally at many points of the sensor creating 2D maps. For this purpose we used a silicon sensor bump bonded to the pixelated Timepix read-out chip. This device, operated in Time-over-threshold (TOT) mode, allows for the direct energy measurement in each pixel. Selected regions of the sensor were intentionally damaged by defined doses (up to 10 12 particles/cm 2 ) of energetic protons (of 2.5 and 4 MeV). The extent of the damage was measured in terms of the detector response to the same ions. This procedure was performed either on-line during irradiation or off-line after it. The response of the detector to each single particle was analyzed determining the charge collection efficiency and lateral charge diffusion. We evaluated the changes of these parameters as a function of radiation dose. These features are related to the local properties such as the spatial homogeneity of the sensor. The effect of radiation damage was also independently investigated measuring local changes of signal response to γ, and X rays and alpha particles.

Radiation damage studies on STAR250 CMOS sensor at 300 keV for electron microscopy

International Nuclear Information System (INIS)

Faruqi, A.R.; Henderson, R.; Holmes, J.

2006-01-01

There is a pressing need for better electronic detectors to replace film for recording high-resolution images using electron cryomicroscopy. Our previous work has shown that direct electron detection in CMOS sensors is promising in terms of resolution and efficiency at 120 keV [A.R. Faruqi, R. Henderson, M. Prydderch, R. Turchetta, P. Allport, A. Evans, Nucl. Instr. and Meth. 546 (2005) 170], but in addition, the detectors must not be damaged by the electron irradiation. We now present new measurements on the radiation tolerance of a 25 μm pitch CMOS active-pixel sensor, the STAR250, which was designed by FillFactory using radiation-hard technology for space applications. Our tests on the STAR250 aimed to establish the imaging performance at 300 keV following irradiation. The residual contrast, measured on shadow images of a 300 mesh grid, was >80% after corrections for increased dark current, following irradiation with up to 5x10 7 electrons/pixel (equivalent to 80,000 electron/μm 2 ). A CMOS sensor with this degree of radiation tolerance would survive a year of normal usage for low-dose electron cryomicroscopy, which is a very useful advance

Surface Effects in Segmented Silicon Sensors

OpenAIRE

Kopsalis, Ioannis

2017-01-01

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

Development of beam halo monitors for the European XFEL using radiation hard sensors and demonstration of the technology at FLASH

International Nuclear Information System (INIS)

Ignatenko, Alexandr

2015-05-01

The European X-Ray Free-Electron Laser (E-XFEL), currently under construction in Hamburg, Germany, is intended to be an international linear accelerator (linac) based user facility. Its electron beam can carry maximal average power of 600 kW. A beam with such a high power needs to be carefully transmitted through the machine and safely dumped after utilization. This is supported by various diagnostics tools. A Beam Halo Monitor (BHM) based on synthetic diamond and sapphire sensors has been designed. Diamond sensors are developed by the company element6 for the detection of ionizing radiation and used previously elsewhere. Sapphire sensors are in this thesis applied for the first time. The BHM concept has been applied already at the Free-electron Laser in Hamburg (FLASH). A module with four diamond and four sapphire sensors was designed, installed inside the beam pipe, commissioned, calibrated and has been successfully operated for 4 years. The system contributed significantly to safe and efficient operation of FLASH. Both types of the sensors for the BHM were characterized. Measurements of radiation tolerance are done in a 10 MeV electron beam for polycrystalline CVD (pCVD) diamond sensors for the first time up to a dose of 10 MGy and for sapphire sensors up to 5 MGy. The charge collection efficiency (CCE) drops as a function of the absorbed dose, is however still sufficient for application as a BHM. To improve a main sensor characteristic, the charge collection efficiency, for sapphire sensors the impurity concentration was reduced and different growth techniques were compared. Finally, charge collection efficiency of about 5 % for a bias voltage of 500 V was reached. The BHM concept for the XFEL is designed and in the construction phase.

A radiation-hardened two transistor memory cell for monolithic active pixel sensors in STAR experiment

International Nuclear Information System (INIS)

Wei, X; Dorokhov, A; Hu, Y; Gao, D

2011-01-01

Radiation tolerance of Monolithic Active Pixel Sensors (MAPS) is dramatically decreased when intellectual property (IP) memories are integrated for fast readout application. This paper presents a new solution to improve radiation hardness and avoid latch-up for memory cell design. The tradeoffs among radiation tolerance, area and speed are significantly considered and analyzed. The cell designed in 0.35 μm process satisfies the radiation tolerance requirements of STAR experiment. The cell size is 4.55 x 5.45 μm 2 . This cell is smaller than the IP memory cell based on the same process and is only 26% of a radiation tolerant 6T SRAM cell used in previous contribution. The write access time of the cell is less than 2 ns, while the read access time is 80 ns.

Radiation-hard Silicon Photonics for Future High Energy Physics Experiments

CERN Document Server

AUTHOR|(CDS)2089774; Troska, Jan

Collisions of proton beams in the Large Hadron Collider at CERN produce very high radiation levels in the innermost parts of the particle detectors and enormous amounts of measurement data. Thousands of radiation-hard optical links based on directly-modulated laser diodes are thus installed in the particle detectors to transmit the measurement data to the processing electronics. The radiation levels in the innermost regions of future particle detectors will be much higher than they are now. Alternative solutions to laser-based radiation-hard optical links have to be found since the performance of laser diodes decreases beyond the operation margin of the system when irradiated to sufficiently high radiation levels. Silicon Photonics (SiPh) is currently being investigated as a promising alternative technology. First tests have indeed shown that SiPh Mach-Zehnder modulators (MZMs) are relatively insensitive to a high neutron fluence. However, they showed a strong degradation when exposed to ionizing radiation. ...

Radiation-activated sensor

International Nuclear Information System (INIS)

Nirschl, J.C.

1976-01-01

A sensing system is described for use in a remote location which detects electromagnetic radiation energy, the system being self-activating, turning itself automatically on and off, as a function of radiation intensity across the detector. In essence, when no radiation is present across the detector, the system will consume no power, the switches and MOSFET discriminator being essentially in an ''off'' position. Radiation across the detector provides a current to an input capacitance which when charged turns on the switch and the MOSFET discriminator. A switch driver produces an output pulse showing the presence of radiation; the system then shuts off awaiting the next radiation input. Since the sensor system uses virtually no power unless radiation is present, it is ideally suited for use in remote environments where battery power and size is a predominant consideration. 2 claims, 3 drawing figures

Radiation hardness of LuAG:Ce and LuAG:Pr scintillator crystals

CERN Document Server

Derdzyan, M V; Belsky, A; Dujardin, C; Lecoq, P; Lucchini, M; Ovanesyan, K L; Pauwels, K; Pedrini, C; Petrosyan, A G

2012-01-01

Single crystals of LuAG:Ce, LuAG:Pr and un-doped LuAG were grown by the vertical Bridgman method and studied for radiation hardness under gamma-rays with doses in the range 10-10(5) Gy (Co-60). A wide absorption band peaking at around 600 nm springs up in all three types of crystals after the irradiations. The second band peaking at around 375 nm appears in both LuAG:Pr and un-doped LuAG. Compositional variations have been done to reveal the spectral behavior of induced color centers in more detail and to understand their origin. Similarities in behavior of Yb2+ centers in as-grown garnets are found, indicating that radiation induced color centers can be associated with residual trace amounts of Yb present in the raw materials. Un-doped LuAG and LuAG:Ce demonstrate moderate radiation hardness (the induced absorption coefficients being equal to 0.05-0.08 cm(-1) for accumulated doses of 10(3)-10(4) Gy), while LuAG:Pr is less radiation hard. The ways to improve the radiation hardness are discussed.

Towards Radiation Hard Sensor Materials for the CMS Tracker Upgrade

CERN Document Server

Steinbrueck, Georg

2012-01-01

Many measurements are described in literature, performed on a variety of silicon materials and technologies, but they are often hard to compare, because they were done under different conditions. To systematically compare the prope...

Building memristive and radiation hardness TiO{sub 2}-based junctions

Energy Technology Data Exchange (ETDEWEB)

Ghenzi, N., E-mail: n.ghenzi@gmail.com [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Rubi, D. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Mangano, E.; Gimenez, G. [Instituto Nacional de Tecnología Industrial (INTI) (Argentina); Lell, J. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Zelcer, A. [Gerencia Química, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Stoliar, P. [ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); IMN, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes (France); and others

2014-01-01

We study micro-scale TiO{sub 2} junctions that are suitable to be used as resistive random-access memory nonvolatile devices with radiation hardness memristive properties. The fabrication and structural and electrical characterization of the junctions are presented. We obtained a retentivity of 10{sup 5} s, an endurance of 10{sup 4} cycles and reliable switching with short electrical pulses (time-width below 10 ns). Additionally, the devices were exposed to 25 MeV oxygen ions. Then, we performed electrical measurements comparing pristine and irradiated devices in order to check the feasibility of using these junctions as memory elements with memristive and radiation hardness properties. - Highlights: • We fabricated radiation hardness memristive metal insulator metal junctions. • We characterized the structural properties of the devices. • We showed the feasibility of the junctions as a non-volatile memory.

Radiation hardness assurances categories for COTS technologies

International Nuclear Information System (INIS)

Hash, G.L.; Shaneyfelt, M.R.; Sexton, F.W.; Winokur, P.S.

1997-01-01

A comparison of the radiation tolerance of three commercial, and one radiation hardened SRAM is presented for four radiation environments. This work has shown the difficulty associated with strictly categorizing a device based solely on its radiation response, since its category depends on the specific radiation environment considered. For example, the 3.3-V Paradigm SRAM could be considered a radiation-tolerant device except for its SEU response. A more useful classification depends on the methods the manufacturer uses to ensure radiation hardness, i.e. whether specific design and process techniques have been used to harden the device. Finally, this work has shown that burned-in devices may fail functionally as much as 50% lower in total dose environments than non-burned-in devices. No burn-in effect was seen in dose-rate upset, latchup, or SEE environments. The user must ensure that total dose lot acceptance testing was performed on burned-in devices

Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier

International Nuclear Information System (INIS)

Re, V.; Gaioni, L.; Manghisoni, M.; Ratti, L.; Traversi, G.

2010-01-01

The progress of industrial microelectronic technologies has already overtaken the 130 nm CMOS generation that is currently the focus of IC designers for new front-end chips in LHC upgrades and other detector applications. In a broader time span, sub-100 nm CMOS processes may become appealing for the design of very compact front-end systems with advanced integrated functionalities. This is especially true in the case of pixel detectors, both for monolithic devices (MAPS) and for hybrid implementations where a high resistivity sensor is connected to a CMOS readout chip. Technologies beyond the 100 nm frontier have peculiar features, such as the evolution of the device gate material to reduce tunneling currents through the thin dielectric. These new physical device parameters may impact on functional properties such as noise and radiation hardness. On the basis of experimental data relevant to commercial devices, this work studies potential advantages and challenges associated to the design of low-noise and rad-hard analog circuits in these aggressively scaled technologies.

A measurement of Lorentz Angle of radiation-hard Pixel Sensors

CERN Document Server

Aleppo, M

2001-01-01

Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown.

Study of New Silicon Sensors for Experiments at Future Particle Colliders

CERN Document Server

Muñoz Sánchez, Francisca Javiela

In this work, two new technologies for future tracker detectors at future colliders are studied. In addition, the characterization techniques are described and the obtained results are presented. On one side, we studied two-dimensional position-sensitive microstrip sensors. This sensors use a resistive material as electrode instead of the standard metallic one. In this way, using a single sensor we can get information about two coordinates of a particle hit. On the other side, we studied double-sided double-type 3D pixel sensors. This sensors are manufactured in 3D technology instead of in the planar technology. They show more radiation hardness and require less energy to be efficiently operated than sensors manufactured in planar technology. With this work, we demonstrate the resistive microstrip sensors functionality as particle detector and the radiation hardness of 3D pixel detectors has been evaluated.

Development of ITER diagnostics: Neutronic analysis and radiation hardness

Energy Technology Data Exchange (ETDEWEB)

Vukolov, Konstantin, E-mail: vukolov_KY@nrcki.ru; Borisov, Andrey; Deryabina, Natalya; Orlovskiy, Ilya

2015-10-15

Highlights: • Problems of ITER diagnostics caused by neutron radiation from hot DT plasma considered. • Careful neutronic analysis is necessary for ITER diagnostics development. • Effective nuclear shielding for ITER diagnostics in the 11th equatorial port plug proposed. • Requirements for study of radiation hardness of diagnostic elements defined. • Results of optical glasses irradiation tests in a fission reactor given. - Abstract: The paper is dedicated to the problems of ITER diagnostics caused by effects of radiation from hot DT plasma. An effective nuclear shielding must be arranged in diagnostic port plugs to meet the nuclear safety requirements and to provide reliable operation of the diagnostics. This task can be solved with the help of neutronic analysis of the diagnostics environment within the port plugs at the design stage. Problems of neutronic calculations are demonstrated for the 11th equatorial port plug. The numerical simulation includes the calculations of neutron fluxes in the port-plug and in the interspace. Options for nuclear shielding, such as tungsten collimator, boron carbide and water moderators, stainless steel and lead screens are considered. Data on neutron fluxes along diagnostic labyrinths allow to define radiation hardness requirements for the diagnostic components and to specify their materials. Options for windows and lenses materials for optical diagnostics are described. The results of irradiation of flint and silica glasses in nuclear reactor have shown that silica KU-1 and KS-4V retain transparency in visible range after neutron fluence of 10{sup 17} cm{sup −2}. Flints required for achromatic objectives have much less radiation hardness about 5 × 10{sup 14} n/cm{sup 2}.

Review of high bandwidth fiber optics radiation sensors

International Nuclear Information System (INIS)

Lyons, P.B.

1985-01-01

This paper summarizes the use of fiber optics or guided optical systems for radiation sensors. It is limited a passive systems wherein electrical is not required at the sensor location. However, electrically powered light sources, receivers and/or recorders may still be required for detection and data storage in sensor system operation. This paper emphasizes sensor technologies that permit high bandwidth measurements of transient radiation levels, and will also discuss several low bandwidth applications. 60 refs

Radiation Hard and High Light Yield Scintillator Search for CMS Phase II Upgrade

CERN Document Server

Tiras, Emrah

2015-01-01

The CMS detector at the LHC requires a major upgrade to cope with the higher instantaneous luminosity and the elevated radiation levels. The active media of the forward backing hadron calorimeters is projected to be radiation-hard, high light yield scintillation materials or similar alternatives. In this context, we have studied various radiation-hard scintillating materials such as Polyethylene Terephthalate (PET), Polyethylene Naphthalate (PEN), High Efficiency Mirror (HEM) and quartz plates with various coatings. The quartz plates are pure Cerenkov radiators and their radiation hardness has been confirmed. In order to increase the light output, we considered organic and inorganic coating materials such as p-Terphenyl (pTp), Anthracene and Gallium-doped Zinc Oxide (ZnO Ga) that are applied as thin layers on the surface of the quartz plates. Here, we present the results of the related test beam activities, laboratory measurements and recent developments.

Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

International Nuclear Information System (INIS)

Sun, Ke-Xun; MacNeil, Lawrence; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

2010-01-01

Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 10 15 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 10 12 protons/cm 2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2 x 10 12 protons/cm 2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Feasibility Study on Fiber-optic Radiation Sensor for Remote Gamma-ray Spectroscopy

International Nuclear Information System (INIS)

Jeon, Hyesu; Jang, Kyoung Won; Shin, Sang Hun and others

2014-01-01

In this study, we fabricated a fiber-optic radiation sensor using an optical fiber and various scintillators. To select an adequate inorganic scintillator for the sensing probe of fiber-optic radiation sensor, 5 types of scintillators were evaluated. The spectra of gamma-rays emitted from a Na-22 radiation source were measured by using the manufactured sensors. As a result, the BGO was suitable for the sensing probe of fiber-optic radiation sensor due to its high scintillation output and exact photoelectric peak for the gamma-ray energy. The basic principle of radiation detection is to detect the signals caused by interactions between radiations and materials. There are various types of radiation detectors depending on types of radiation to be detected and physical quantities to be measured. As one of the radiation detectors, a fiber-optic radiation sensor using a scintillator and an optical fiber has two advantages such as no space restraint and remote sensing. Moreover, in nuclear environments, this kind of sensor has immunities for electromagnetic field, temperature, and pressure. Thus, the fiber-optic radiation sensor can be used in various fields including nondestructive inspection, radioactive waste management, nuclear safety, radiodiagnosis and radiation therapy. As a fundamental study of the fiber-optic radiation sensor for remote gamma-ray spectroscopy, in this study, we fabricated a fiber-optic radiation sensor using an optical fiber and various scintillators. To select an adequate inorganic scintillator for the sensing probe of fiber-optic radiation sensor, 5 types of scintillators were evaluated. The spectra of gamma-rays emitted from a Na-22 radiation source were measured by using the manufactured sensors

Performance of semiconductor radiation sensors for simple and low-cost radiation detector

International Nuclear Information System (INIS)

Tanimura, Yoshihiko; Birumachi, Atsushi; Yoshida, Makoto; Watanabe, Tamaki

2008-01-01

In order to develop a simple but reliable radiation detector for the general public, photon detection performances of radiation sensors have been studied in photon calibration fields and by Monte Carlo simulations. A silicon p-i-n photodiode and a CdTe detector were selected for the low cost sensors. Their energy responses to ambient dose equivalent H * (10) were evaluated over the energy range from 60 keV to 2 MeV. The response of the CdTe decreases markedly with increasing photon energy. On the other hand, the photodiode has the advantage of almost flat response above 150 keV. The sensitivities of these sensors are 4 to 6 cpm for the natural radiation. Detection limits of the radiation level are low enough to know the extreme increase of radiation due to emergency situations of nuclear power plants, fuel treatment facilities and so on. (author)

CeF3(Ba) radiation hard scintillator for electromagnetic calorimeters

International Nuclear Information System (INIS)

Aseev, A.A.; Devitsin, E.G.; Kozlov, V.A.; Hovepyan, Yu.I.; Potashov, S.Yu.; Sokolovsky, K.A.; Uvarova, T.V.; Vasilchenko, V.G.

1992-01-01

The influence of divalent fluoride dopants BaF 2 , CaF 2 , SrF 2 on radiation and luminescent properties of CeF 3 crystal is studied. A high radiation hardness (>10 8 rad) has been obtained for CeF 3 crystals doped with BaF 2 . (orig.)

Electromagnetic and nuclear radiation detector using micromechanical sensors

Science.gov (United States)

Thundat, Thomas G.; Warmack, Robert J.; Wachter, Eric A.

2000-01-01

Electromagnetic and nuclear radiation is detected by micromechanical sensors that can be coated with various interactive materials. As the micromechanical sensors absorb radiation, the sensors bend and/or undergo a shift in resonance characteristics. The bending and resonance changes are detected with high sensitivity by any of several detection methods including optical, capacitive, and piezoresistive methods. Wide bands of the electromagnetic spectrum can be imaged with picoJoule sensitivity, and specific absorptive coatings can be used for selective sensitivity in specific wavelength bands. Microcantilevers coated with optical cross-linking polymers are useful as integrating optical radiation dosimeters. Nuclear radiation dosimetry is possible by fabricating cantilevers from materials that are sensitive to various nuclear particles or radiation. Upon exposure to radiation, the cantilever bends due to stress and its resonance frequency shifts due to changes in elastic properties, based on cantilever shape and properties of the coating.

Chronic radiation effects on dental hard tissue (''radiation carries''). Classification and therapeutic strategies

International Nuclear Information System (INIS)

Groetz, K.A.; Brahm, R.; Al-Nawas, B.; Wagner, W.; Riesenbeck, D.; Willich, N.; Seegenschmiedt, M.H.

2001-01-01

Objectives: Since the first description of rapid destruction of dental hard tissues following head and neck radiotherapy 80 years ago, 'radiation caries' is an established clinical finding. The internationally accepted clinical evaluation score RTOG/EORTC however is lacking a classification of this frequent radiogenic alteration. Material and Methods: Medical records, data and images of radiation effects on the teeth of more than 1,500 patients, who underwent periradiotherapeutic care, were analyzed. Macroscopic alterations regarding the grade of late lesions of tooth crowns were used for a classification into 4 grades according to the RTOG/EORTC guidelines. Results: No early radiation effects were found by macroscopic inspection. In the first 90 days following radiotherapy 1/3 of the patients complained of reversible hypersensitivity, which may be related to a temporary hyperemia of the pulp. It was possible to classify radiation caries as a late radiation effect on a graded scale as known from RTOG/EORTC for other organ systems. This is a prerequisite for the integration of radiation caries into the international nomenclature of the RTOG/EORTC classification. Conclusions: The documentation of early radiation effects on dental hard tissues seems to be neglectable. On the other hand the documentation of late radiation effects has a high clinical impact. The identification of an initial lesion at the high-risk areas of the neck and incisal part of the tooth can lead to a successful therapy as a major prerequisite for orofacial rehabilitation. An internationally standardized documentation is a basis for the evaluation of the side effects of radiooncotic therapy as well as the effectiveness of protective and supportive procedures. (orig.) [de

Transition radiation in metal-metal multilayer nanostructures as a medical source of hard x-ray radiation

International Nuclear Information System (INIS)

Pokrovsky, A. L.; Kaplan, A. E.; Shkolnikov, P. L.

2006-01-01

We show that a periodic metal-metal multilayer nanostructure can serve as an efficient source of hard x-ray transition radiation. Our research effort is aimed at developing an x-ray source for medical applications, which is based on using low-energy relativistic electrons. The approach toward choosing radiator-spacer couples for the generation of hard x-ray resonant transition radiation by few-MeV electrons traversing solid multilayer structures for the energies of interest to medicine (30-50 keV) changes dramatically compared with that for soft x-ray radiation. We show that one of the main factors in achieving the required resonant line is the absence of the contrast of the refractive indices between the spacer and the radiator at the far wings of the radiation line; for that purpose, the optimal spacer, as a rule, should have a higher atomic number than the radiator. Having experimental goals in mind, we have considered also the unwanted effects due to bremsstrahlung radiation, absorption and scattering of radiated photons, detector-related issues, and inhibited coherence of transition radiation due to random deviation of spacing between the layers. Choosing as a model example a Mo-Ag radiator-spacer pair of materials, we demonstrate that the x-ray transition radiation line can be well resolved with the use of spatial and frequency filtering

It must be hard to stay so close

CERN Multimedia

Rossi, L

The ATLAS pixel detector should operate for many years at a few centimeters from the LHC collision region. Every part of the detector should then be radiation hard to levels exceeding 500 KGy. This requirement is particularly difficult to meet for the active parts of the detectors, namely the sensors and the electronics. While the pixel sensors have already proven to be rad-hard, the electronics, being more complex, have required a longer development period. It is then with understandable excitement that the pixel collaboration begun to test the first samples of rad-hard electronics developed in Deep Sub Micron (DSM), a technology where the very pure and thin oxides minimize the transistor voltage threshold variation with irradiation. The first DSM 8" wafers have been delivered in January 2002, after a long and intense design activity lead by Kevin Einsweiler. Several laboratories did contribute to the design of the electronics: the Front End chip has been developed by Bonn, CPPM and LBNL, the Module Contro...

The transient radiation effects and hardness of programmed device

International Nuclear Information System (INIS)

Du Chuanhua; Xu Xianguo; Zhao Hailin

2014-01-01

A review and summary of research and development in the investigation of transient ionizing radiation effects in device and cirviut is presented. The transient ionizing radiation effects in two type of programmed device, that's 32 bit Microcontroller and antifuse FPGA, were studied. The expeiment test data indicate: The transient ionizing radiation effects of 32 bit Microcontroller manifested self-motion restart and Latchup, the Latchup threshold was 5 × 10"7 Gy (Si)/s. The transient ionizing radiation effects of FPGA was reset, no Latchup. The relationship of circuit effects to physical mechanisms was analized. A new method of hardness in circiut design was put forward. (authors)

Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Science.gov (United States)

Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

2018-05-01

Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Science.gov (United States)

Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

2018-03-01

Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

Performance And Radiation Hardness Of The Atlas/sct Detector Module

CERN Document Server

Eklund, L

2003-01-01

The ATLAS experiment is a general purpose experiment being constructed at the Large Hadron Collider (LHC) at FERN, Geneva. ATLAS is designed to exploit the full physics potential of LHC, in particular to study topics concerning the Higgs mechanism, Super-symmetry and CP violation. The cross sections for the processes under study are extremely small, requiring very high luminosity colliding beams. The Semiconductor Tracker (SCT) is an essential part of the Inner Detector tracking system of ATLAS. The active elements of the SCT is 4088 detector modules, tiled on four barrel cylinders and eighteen endcap disks. As a consequence of the high luminosity, the detector modules will operate in a harsh radiation environment. This thesis describes work concerning radiation hardness, beam test performance and methods for production testing of detector modules. The radiation hardness studies have been focused on the electrical performance of the front-end ASIC and the detector module. The results have identified features ...

GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

Science.gov (United States)

Son, Kyung-ah; Liao, Anna; Lung, Gerald; Gallegos, Manuel; Hatakeh, Toshiro; Harris, Richard D.; Scheick, Leif Z.; Smythe, William D.

2010-01-01

We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

Air temperature sensors: dependence of radiative errors on sensor diameter in precision metrology and meteorology

Science.gov (United States)

de Podesta, Michael; Bell, Stephanie; Underwood, Robin

2018-04-01

In both meteorological and metrological applications, it is well known that air temperature sensors are susceptible to radiative errors. However, it is not widely known that the radiative error measured by an air temperature sensor in flowing air depends upon the sensor diameter, with smaller sensors reporting values closer to true air temperature. This is not a transient effect related to sensor heat capacity, but a fluid-dynamical effect arising from heat and mass flow in cylindrical geometries. This result has been known historically and is in meteorology text books. However, its significance does not appear to be widely appreciated and, as a consequence, air temperature can be—and probably is being—widely mis-estimated. In this paper, we first review prior descriptions of the ‘sensor size’ effect from the metrological and meteorological literature. We develop a heat transfer model to describe the process for cylindrical sensors, and evaluate the predicted temperature error for a range of sensor sizes and air speeds. We compare these predictions with published predictions and measurements. We report measurements demonstrating this effect in two laboratories at NPL in which the air flow and temperature are exceptionally closely controlled. The results are consistent with the heat-transfer model, and show that the air temperature error is proportional to the square root of the sensor diameter and that, even under good laboratory conditions, it can exceed 0.1 °C for a 6 mm diameter sensor. We then consider the implications of this result. In metrological applications, errors of the order of 0.1 °C are significant, representing limiting uncertainties in dimensional and mass measurements. In meteorological applications, radiative errors can easily be much larger. But in both cases, an understanding of the diameter dependence allows assessment and correction of the radiative error using a multi-sensor technique.

Radiation effects on active pixel sensors (APS)

International Nuclear Information System (INIS)

Cohen, M.; David, J.P.

1999-01-01

Active pixel sensor (APS) is a new generation of image sensors which presents several advantages relatively to charge coupled devices (CCDs) particularly for space applications (APS requires only 1 voltage to operate which reduces considerably current consumption). Irradiation was performed using 60 Co gamma radiation at room temperature and at a dose rate of 150 Gy(Si)/h. 2 types of APS have been tested: photodiode-APS and photoMOS-APS. The results show that photoMOS-APS is more sensitive to radiation effects than photodiode-APS. Important parameters of image sensors like dark currents increase sharply with dose levels. Nevertheless photodiode-APS sensitivity is one hundred time lower than photoMOS-APS sensitivity

Study of hard braking x-ray radiation on the radiation-beam complex ''TEMP''

International Nuclear Information System (INIS)

Batrakov, A.B.; Glushko, E.G.; Egorov, A.M.; Zinchenko, A.A.; Litvinenko, V.V.; Lonin, Yu.F.; Ponomarev, A.G.; Rybka, A.V.; Fedotov, S.I.; Uvarov, V.T.

2015-01-01

A calculation over of basic parameters of the hard brake x-rayed radiation for the microsecond accelerating of relativistic electronic beam T EMP . Optimization of converters is conducted for these aims. Maximal doses are experimentally got brake x-rayed radiation on beam-radiation complex T EMP . The diagrams of orientation of the brake x-rayed radiation are taken off depending on energies of bunches and forms of electrodes.

PAVENET OS: A Compact Hard Real-Time Operating System for Precise Sampling in Wireless Sensor Networks

Science.gov (United States)

Saruwatari, Shunsuke; Suzuki, Makoto; Morikawa, Hiroyuki

The paper shows a compact hard real-time operating system for wireless sensor nodes called PAVENET OS. PAVENET OS provides hybrid multithreading: preemptive multithreading and cooperative multithreading. Both of the multithreading are optimized for two kinds of tasks on wireless sensor networks, and those are real-time tasks and best-effort ones. PAVENET OS can efficiently perform hard real-time tasks that cannot be performed by TinyOS. The paper demonstrates the hybrid multithreading realizes compactness and low overheads, which are comparable to those of TinyOS, through quantitative evaluation. The evaluation results show PAVENET OS performs 100 Hz sensor sampling with 0.01% jitter while performing wireless communication tasks, whereas optimized TinyOS has 0.62% jitter. In addition, PAVENET OS has a small footprint and low overheads (minimum RAM size: 29 bytes, minimum ROM size: 490 bytes, minimum task switch time: 23 cycles).

Recent results on the development of radiation-hard diamond detectors

CERN Document Server

Conway, J S; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Dabrowski, W; Da Graca, J; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jamieson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Plano, R; Polesello, P; Prawer, S; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Russ, J; Schnetzer, S; Sciortino, S; Somalwar, S V; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Thomson, G B; Trawick, M; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

1999-01-01

Charged particle detectors made from chemical vapor deposition (CVD) diamond have radiation hardness greatly exceeding that of silicon- based detectors. The CERN-based RD42 Collaboration has developed and tested CVD diamond microstrip and pixel detectors with an eye to their application in the intense radiation environment near the interaction region of hadron colliders. This paper presents recent results from tests of these detectors. (4 refs).

Radiation distribution sensor with optical fibers for high radiation fields

International Nuclear Information System (INIS)

Takada, Eiji; Kimura, Atsushi; Hosono, Yoneichi; Takahashi, Hiroyuki; Nakazawa, Masaharu

1999-01-01

Radiation distribution sensors with their feasibilities have been described in earlier works. However, due to large radiation induced transmission losses in optical fibers, especially in the visible wavelength region, it has been difficult to apply these techniques to high radiation fields. In this study, we proposed a new concept of optical fiber based radiation distribution measurements with near infrared (IR) emission. Near IR scintillators were attached to the ends of optical fibers, where the fibers were bundled and connected to an N-MOS line sensor or a cooled CCD camera. From the measurements of each area density, the radiation levels at the positions of the scintillators can be known. The linearity between the gamma dose rate at each scintillator and the registered counts has been examined. For correcting the radiation induced loss effects, we applied the Optical Time Domain Reflectometry technique to measure the loss distribution and from the results, a possibility for correction of the loss effect has been demonstrated. The applicable dose rate range was evaluated to be from 0.1 to 10 3 Gy/h. This system can be a promising tool as a flexible dose rate distribution monitor in radiation facilities like nuclear plants and accelerator facilities. (author)

Fluid dynamic analysis and experimental study of a low radiation error temperature sensor

Energy Technology Data Exchange (ETDEWEB)

Yang, Jie, E-mail: yangjie396768@163.com [Key Laboratory for Aerosol-Cloud-Precipitation of China Meteorological Administration, Nanjing 210044 (China); School of Atmospheric Physics, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Liu, Qingquan, E-mail: andyucd@163.com [Jiangsu Key Laboratory of Meteorological Observation and Information Processing, Nanjing 210044 (China); Jiangsu Collaborative Innovation Center on Atmospheric Environment and Equipment Technology, Nanjing 210044 (China); Dai, Wei, E-mail: daiweiilove@163.com [Key Laboratory for Aerosol-Cloud-Precipitation of China Meteorological Administration, Nanjing 210044 (China); School of Atmospheric Physics, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Ding, Renhui, E-mail: drhabcd@sina.com [Jiangsu Meteorological Observation Center, Nanjing 210008 (China)

2017-01-30

To improve the air temperature observation accuracy, a low radiation error temperature sensor is proposed. A Computational Fluid Dynamics (CFD) method is implemented to obtain radiation errors under various environmental conditions. The low radiation error temperature sensor, a naturally ventilated radiation shield, a thermometer screen and an aspirated temperature measurement platform are characterized in the same environment to conduct the intercomparison. The aspirated platform served as an air temperature reference. The mean radiation errors of the naturally ventilated radiation shield and the thermometer screen are 0.57 °C and 0.32 °C, respectively. In contrast, the mean radiation error of the low radiation error temperature sensor is 0.05 °C. The low radiation error temperature sensor proposed in this research may be helpful to provide a relatively accurate air temperature measurement result. - Highlights: • A CFD method is applied to obtain a quantitative solution of radiation error. • A temperature sensor is proposed to minimize radiation error. • The radiation error of the temperature sensor is on the order of 0.05 °C.

Piezoelectric Sensor to Measure Soft and Hard Stiffness with High Sensitivity for Ultrasonic Transducers

Directory of Open Access Journals (Sweden)

Yan-Rui Li

2015-06-01

Full Text Available During dental sinus lift surgery, it is important to monitor the thickness of the remaining maxilla to avoid perforating the sinus membrane. Therefore, a sensor should be integrated into ultrasonic dental tools to prevent undesirable damage. This paper presents a piezoelectric (PZT sensor installed in an ultrasonic transducer to measure the stiffness of high and low materials. Four design types using three PZT ring materials and a split PZT for actuator and sensor ring materials were studied. Three sensor locations were also examined. The voltage signals of the sensor and the displacement of the actuator were analyzed to distinguish the low and high stiffness. Using sensor type T1 made of the PZT-1 material and the front location A1 provided a high sensitivity of 2.47 Vm/kN. The experimental results demonstrated that our design can measure soft and hard stiffness.

Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures

Directory of Open Access Journals (Sweden)

Evgeny Pikhay

2017-07-01

Full Text Available In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sensors. The developed devices are intended for total ionizing dose (TID measurements and fabricated in a standard CMOS process flow. Sensor design and operation is discussed in detail. Original array sensors were suggested and fabricated that allowed high statistical significance of the radiation measurements and radiation imaging functions. Single sensors and array sensors were analyzed in combination with the specially developed test structures. This allowed insight into the physics of sensor operations and exclusion of the phenomena related to material degradation under irradiation in the interpretation of the measurement results. Response of the developed sensors to various sources of ionizing radiation (Gamma, X-ray, UV, energetic ions was investigated. The optimal design of sensor for implementation in dosimetry systems was suggested. The roadmap for future improvement of sensor performance is suggested.

Characterization of the first double-sided 3D radiation sensors fabricated at FBK on 6-inch silicon wafers

International Nuclear Information System (INIS)

Sultan, D.M.S.; Mendicino, R.; Betta, G.-F. Dalla; Boscardin, M.; Ronchin, S.; Zorzi, N.

2015-01-01

Following 3D pixel sensor production for the ATLAS Insertable B-Layer, Fondazione Bruno Kessler (FBK) fabrication facility has recently been upgraded to process 6-inch wafers. In 2014, a test batch was fabricated to check for possible issues relevant to this upgrade. While maintaining a double-sided fabrication technology, some process modifications have been investigated. We report here on the technology and the design of this batch, and present selected results from the electrical characterization of sensors and test structures. Notably, the breakdown voltage is shown to exceed 200 V before irradiation, much higher than in earlier productions, demonstrating robustness in terms of radiation hardness for forthcoming productions aimed at High Luminosity LHC upgrades

Hardness measurements of silicon rubber and polyurethane rubber cured by ionizing radiation

International Nuclear Information System (INIS)

Basfar, A.A.

1995-01-01

This work investigates the hardness of both silicon rubber and polyurethane rubber cured by ionizing radiation. Shore A Hardness is used to characterize the subject elastomers in relation to the crosslinking process. Various formulations of both materials have been investigated in order to achieve the optimum cure conditions desired. A small amount of the curing agent has been incorporated in some formulations in order to reduce the required dose to achieve full cure conditions. Silicon rubber has shown improvements in hardness as absorbed dose is increased, whereas hardness remained constant over a range of absorbed doses for polyurethane rubber

Radiation hardness qualification of PbWO4 scintillation crystals for the CMS Electromagnetic Calorimeter

CERN Document Server

Adzic, P.; Andelin, D.; Anicin, I.; Antunovic, Z.; Arcidiacono, R.; Arenton, M.W.; Auffray, E.; Argiro, S.; Askew, A.; Baccaro, S.; Baffioni, S.; Balazs, M.; Bandurin, D.; Barney, D.; Barone, L.M.; Bartoloni, A.; Baty, C.; Beauceron, S.; Bell, K.W.; Bernet, C.; Besancon, M.; Betev, B.; Beuselinck, R.; Biino, C.; Blaha, J.; Bloch, P.; Borisevitch, A.; Bornheim, A.; Bourotte, J.; Brown, R.M.; Buehler, M.; Busson, P.; Camanzi, B.; Camporesi, T.; Cartiglia, N.; Cavallari, F.; Cecilia, A.; Chang, P.; Chang, Y.H.; Charlot, C.; Chen, E.A.; Chen, W.T.; Chen, Z.; Chipaux, R.; Choudhary, B.C.; Choudhury, R.K.; Cockerill, D.J.A.; Conetti, S.; Cooper, S.I.; Cossutti, F.; Cox, B.; Cussans, D.G.; Dafinei, I.; Da Silva Di Calafiori, D.R.; Daskalakis, G.; David, A.; Deiters, K.; Dejardin, M.; De Benedetti, A.; Della Ricca, G.; Del Re, D.; Denegri, D.; Depasse, P.; Descamps, J.; Diemoz, M.; Di Marco, E.; Dissertori, G.; Dittmar, M.; Djambazov, L.; Djordjevic, M.; Dobrzynski, L.; Dolgopolov, A.; Drndarevic, S.; Drobychev, G.; Dutta, D.; Dzelalija, M.; Elliott-Peisert, A.; El Mamouni, H.; Evangelou, I.; Fabbro, B.; Faure, J.L.; Fay, J.; Fedorov, A.; Ferri, F.; Franci, D.; Franzoni, G.; Freudenreich, K.; Funk, W.; Ganjour, S.; Gascon, S.; Gataullin, M.; Gentit, F.X.; Ghezzi, A.; Givernaud, A.; Gninenko, S.; Go, A.; Gobbo, B.; Godinovic, N.; Golubev, N.; Govoni, P.; Grant, N.; Gras, P.; Haguenauer, M.; Hamel de Monchenault, G.; Hansen, M.; Haupt, J.; Heath, H.F.; Heltsley, B.; Cornell U., LNS.; Hintz, W.; Hirosky, R.; Hobson, P.R.; Honma, A.; Hou, G.W.S.; Hsiung, Y.; Huhtinen, M.; Ille, B.; Ingram, Q.; Inyakin, A.; Jarry, P.; Jessop, C.; Jovanovic, D.; Kaadze, K.; Kachanov, V.; Kailas, S.; Kataria, S.K.; Kennedy, B.W.; Kokkas, P.; Kolberg, T.; Korjik, M.; Krasnikov, N.; Krpic, D.; Kubota, Y.; Kuo, C.M.; Kyberd, P.; Kyriakis, A.; Lebeau, M.; Lecomte, P.; Lecoq, P.; Ledovskoy, A.; Lethuillier, M.; Lin, S.W.; Lin, W.; Litvine, V.; Locci, E.; Longo, E.; Loukas, D.; Luckey, P.D.; Lustermann, W.; Ma, Y.; Malberti, M.; Malcles, J.; Maletic, D.; Manthos, N.; Maravin, Y.; Marchica, C.; Marinelli, N.; Markou, A.; Markou, C.; Marone, M.; Matveev, V.; Mavrommatis, C.; Meridiani, P.; Milenovic, P.; Mine, P.; Missevitch, O.; Mohanty, A.K.; Moortgat, F.; Musella, P.; Musienko, Y.; Nardulli, A.; Nash, J.; Nedelec, P.; Negri, P.; Newman, H.B.; Nikitenko, A.; Nessi-Tedaldi, F.; Obertino, M.M.; Organtini, G.; Orimoto, T.; Paganoni, M.; Paganini, P.; Palma, A.; Pant, L.; Papadakis, A.; Papadakis, I.; Papadopoulos, I.; Paramatti, R.; Parracho, P.; Pastrone, N.; Patterson, J.R.; Pauss, F.; Peigneux, J.P.; Petrakou, E.; Phillips, D.G.; Piroue, P.; Ptochos, F.; Puljak, I.; Pullia, A.; Punz, T.; Puzovic, J.; Ragazzi, S.; Rahatlou, S.; Rander, J.; Razis, P.A.; Redaelli, N.; Renker, D.; Reucroft, S.; Ribeiro, P.; Rogan, C.; Ronquest, M.; Rosowsky, A.; Rovelli, C.; Rumerio, P.; Rusack, R.; Rusakov, S.V.; Ryan, M.J.; Sala, L.; Salerno, R.; Schneegans, M.; Seez, C.; Sharp, P.; Shepherd-Themistocleous, C.H.; Shiu, J.G.; Shivpuri, R.K.; Shukla, P.; Siamitros, C.; Sillou, D.; Silva, J.; Silva, P.; Singovsky, A.; Sirois, Y.; Sirunyan, A.; Smith, V.J.; Stockli, F.; Swain, J.; Tabarelli de Fatis, T.; Takahashi, M.; Tancini, V.; Teller, O.; Theofilatos, K.; Thiebaux, C.; Timciuc, V.; Timlin, C.; Titov, Maxim P.; Topkar, A.; Triantis, F.A.; Troshin, S.; Tyurin, N.; Ueno, K.; Uzunian, A.; Varela, J.; Verrecchia, P.; Veverka, J.; Virdee, T.; Wang, M.; Wardrope, D.; Weber, M.; Weng, J.; Williams, J.H.; Yang, Y.; Yaselli, I.; Yohay, R.; Zabi, A.; Zelepoukine, S.; Zhang, J.; Zhang, L.Y.; Zhu, K.; Zhu, R.Y.

2010-01-01

Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews the related scientific and technological problems encountered.

Fabrication of advanced military radiation detector sensor and performance evaluation

International Nuclear Information System (INIS)

Kang, Sin Yang

2010-02-01

Recently, our country is facing a continuous nuclear weapons threat. Therefore, we must have a high-level nuclear weapons protection system. The best protection against nuclear weapons is detecting their use to reduce casualties in our country to a minimum. That means, the development of a military radiation detector is a very important issue. The Korea army is using the 'PDR - 1K portable military radiation surveymeter' in NBC (Nuclear, Biological, Chemical warfare) operations. The PDR - 1K military detector can measure beta and gamma rays only but it cannot detect alpha particles. Because of its characteristics, the Korea army has weaknesses in tactical operations. The PDR - 1K sensor is based on a GM - tube sensor system. For the mechanical structure, detectors utilizing a GM-tube sensor do not work on a high - radiation battlefield and they do not carry out nuclide analysis for fixed electron signal output. In the meantime, the United States of America and Germany are using 'AN/PDR - 77' and 'SVG - 2' that were made from scintillator sensors. They have excellent physical qualities and radiation responses for military use. Also, nuclide analysis is available. Therefore, in this study we fabricated a military - grade scintillator radiation sensor that is able to detect alpha, beta, and gamma - rays to overcome PDR - 1K's weaknesses. Also, physical characteristics and radiation response evaluation for the fabricated sensors was carried out. The alpha - particle sensor and beta - ray sensor were fabricated using a ZnS(Ag) powder state scintillator, and a Saint - Gobain organic plastic scintillator BC-408 panel, respectively. The gamma ray sensor was manufactured using a 10 x 10 x 10 mm 3 CsI(Tl) inorganic scintillator crystal. A detailed explanation follows. The alpha particle sensor was fabricated by using air - brushing method to Zns(Ag) powder scintillator spreading. The ZnS(Ag) layer thickness was 35 μm (detection efficiency: 41%). This alpha - particle sensor

Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology

Science.gov (United States)

Xapsos, M. A.; Stauffer, C.; Phan, A.; McClure, S. S.; Ladbury, R. L.; Pellish, J. A.; Campola, M. J.; LaBel, K. A.

2016-01-01

Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the radiation design margin concept with one of failure probability during a mission.

Large area CMOS image sensors

International Nuclear Information System (INIS)

Turchetta, R; Guerrini, N; Sedgwick, I

2011-01-01

CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

Gamma and Neutron Irradiation of Semitransparent Amorphous Silicon Sensors

International Nuclear Information System (INIS)

Carabe, J.; Fernandez, M. G.; Ferrando, A.; Fuentes, J.; Gandia, J.; Josa, M. I.; Molinero, A.; Oller, J. C.; Arce, P.; Calvo, E.; Figueroa, C. F.; Garcia, N.; Matorras, F.; Rodrigo, T.; Vila, I.; Virto, A. L.; Fenyvesi, A.; Molnar, J.; Sohler, D.

1999-12-01

Semitransparent amorphous silicon sensors are key elements for laser light 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in very hard radiation environment. We have irradiated with gammas, up to 10 Mrad, and neutrons, up to 10 ''14 cm''-2, two different type of sensors and measured their change in performance. (Author) 10 refs

Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

Science.gov (United States)

Riegel, C.; Backhaus, M.; Van Hoorne, J. W.; Kugathasan, T.; Musa, L.; Pernegger, H.; Riedler, P.; Schaefer, D.; Snoeys, W.; Wagner, W.

2017-01-01

A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS technologies, which include part or all of the readout chain, are also investigated offering a reduced cost as they are cheaper per unit area than traditional silicon detectors. If they contain the full readout chain, as for a fully monolithic approach, there is no need for the expensive flip-chip assembly, resulting in a further cost reduction and material savings. In the outer pixel layers of the ATLAS Inner Tracker, the pixel sensors must withstand non-ionising energy losses of up to 1015 n/cm2 and offer a timing resolution of 25 ns or less. This paper presents test results obtained on a monolithic test chip, the TowerJazz 180nm Investigator, towards these specifications. The presented program of radiation hardness and timing studies has been launched to investigate this technology's potential for the new ATLAS Inner Tracker.

Development of Sensor Technology and Its Application for Nuclear Radiation Detection

International Nuclear Information System (INIS)

Hiskia

2007-01-01

Radiation is energy in the form of waves or moving subatomic particles. Radiation can be ionizing or nonionizing radiation, depending on its effect on atomic matter. Because radiation cannot be seen, felt, tasted, heard or smelled, even at lethal levels, radiations detection devices must be used to alert those exposed to radiation. The measurement of radioactivity in the environment is a regulatory requirement around sites where significant amounts of radioactive materials are used or stored. Recently, advent in microelectronics and material technology has enabled to produce small sensor or microsensor, sensitive, accurate, and integrated in a chip or substrate. Development of radiation sensor technology using thin/thick film and micromachining technique was described in this paper. Indonesian capabilities in radiation sensor research and development and opportunities for commercialization also given. (author)

The Development of Sensor Technology and Application to Detect Nuclear Radiation

International Nuclear Information System (INIS)

Hiskia

2007-01-01

Radiation is energy in the form of waves or moving subatomic particles. Radiation can be ionizing or non-ionizing radiation, depending on its effect on atomic matter. Because radiation cannot be seen, felt, tasted, heard or smelled, even at lethal levels, radiations detection devices must be used to alert those exposed to radiation. The measurement of radioactivity in the environment is a regulatory requirement around sites where significant amounts of radioactive materials are used or stored. Recently, advent in microelectronics and material technology has enabled to produce small sensor or microsensor, sensitive, accurate, and integrated in a chip or substrate. Development of radiation sensor technology using thin/thick film and micromachining technique was described in this paper. Indonesian capabilities in radiation sensor research and development and opportunities for commercialization also given. (author)

Multi-dimensional fiber-optic radiation sensor for ocular proton therapy dosimetry

International Nuclear Information System (INIS)

Jang, K.W.; Yoo, W.J.; Moon, J.; Han, K.T.; Park, B.G.; Shin, D.; Park, S-Y.; Lee, B.

2012-01-01

In this study, we fabricated a multi-dimensional fiber-optic radiation sensor, which consists of organic scintillators, plastic optical fibers and a water phantom with a polymethyl methacrylate structure for the ocular proton therapy dosimetry. For the purpose of sensor characterization, we measured the spread out Bragg-peak of 120 MeV proton beam using a one-dimensional sensor array, which has 30 fiber-optic radiation sensors with a 1.5 mm interval. A uniform region of spread out Bragg-peak using the one-dimensional fiber-optic radiation sensor was obtained from 20 to 25 mm depth of a phantom. In addition, the Bragg-peak of 109 MeV proton beam was measured at the depth of 11.5 mm of a phantom using a two-dimensional sensor array, which has 10×3 sensor array with a 0.5 mm interval.

Installation of a TCT set-up for characterization of novel HV-CMOS planar silicon sensors

CERN Document Server

Marx, Lisa

2013-01-01

For future upgrades of the LHC it is necessary to develop new tracking detectors: more radiation hard and cost efficient pixel detectors with high spacial resolution are required for the planned high luminosity version of the LHC (HL-LHC). For future tracking devices HV-CMOS active pixel sensors are great candidates since they fulfill all the demands mentioned above. First prototypes of these sensors are assembled on custom test boards and together with FE-I4 readout chips they make up the first test pixel detectors. One approach for testing these chips is through using lasers to induce electron-hole-pairs into the depletion zone of the sensor chip diodes to simulate an ionizing particle crossing through the bulk. Comparison measurements of irradiated/non-irradiated sensors are used to explore the radiation hardness of the sensors.

Radiation Hardness Study of CsI(Tl) Crystals for Belle II Calorimeter

CERN Document Server

Matvienko, D V; Sedov, E V; Shwartz, B A

2017-01-01

The Belle II calorimeter (at least, its barrel part) consists of CsI(Tl) scintillation crystals which have been used at the Belle experiment. We perform the radiation hardness study of some typical Belle crystals and conclude their light output reductions are acceptable for Belle II experiment where the absorption dose can reach 10 krad during the detector operation. CsI(Tl) crystals have high stablity and low maintenance cost and are considered as possible option for the calorimeter of the future Super-Charm-Tau factory (SCT) in Novosibirsk. Our study demonstrates sufficiently high radiation hardness of CsI(Tl) crystals for SCT conditions.

Radiation-resistant optical sensors and cameras; Strahlungsresistente optische Sensoren und Kameras

Energy Technology Data Exchange (ETDEWEB)

Fischer, G. [Imaging and Sensing Technology, Bonn (Germany)

2008-02-15

Introducing video technology, i.e. 'TV', specifically in the nuclear field was considered at an early stage. Possibilities to view spaces in nuclear facilities by means of radiation-resistant optical sensors or cameras are presented. These systems are to enable operators to monitor and control visually the processes occurring within such spaces. Camera systems are used, e.g., for remote surveillance of critical components in nuclear power plants and nuclear facilities, and thus contribute also to plant safety. A different application of optical systems resistant to radiation is in the visual inspection of, e.g., reactor pressure vessels and in tracing small parts inside a reactor. Camera systems are also employed in remote disassembly of radioactively contaminated old plants. Unfortunately, the niche market of radiation-resistant camera systems hardly gives rise to the expectation of research funds becoming available for the development of new radiation-resistant optical systems for picture taking and viewing. Current efforts are devoted mainly to improvements of image evaluation and image quality. Other items on the agendas of manufacturers are the reduction in camera size, which is limited by the size of picture tubes, and the increased use of commercial CCD cameras together with adequate shieldings or improved lenses. Consideration is also being given to the use of periphery equipment and to data transmission by LAN, WAN, or Internet links to remote locations. (orig.)

Networked Sensor Arrays

International Nuclear Information System (INIS)

Tighe, R. J.

2002-01-01

A set of independent radiation sensors, coupled with real-time data telemetry, offers the opportunity to run correlation algorithms for the sensor array as well as to incorporate non-radiological data into the system. This may enhance the overall sensitivity of the sensors and provide an opportunity to project the location of a source within the array. In collaboration with Lawrence Livermore National Laboratory (LLNL) and Sandia National Laboratories (SNL), we have conducted field experiments to test a prototype system. Combining the outputs of a set of distributed sensors permits the correlation that the independent sensor outputs. Combined with additional information such as traffic patterns and velocities, this can reduce random/false detections and enhance detection capability. The principle components of such a system include: (1) A set of radiation sensors. These may be of varying type and complexity, including gamma and/or neutron detectors, gross count and spectral-capable sensors, and low to high energy-resolution sensors. (2) A set of non-radiation sensors. These may include sensors such as vehicle presence and imaging sensors. (3) A communications architecture for near real-time telemetry. Depending upon existing infrastructure and bandwidth requirements, this may be a radio or hard-wire based system. (4) A central command console to pole the sensors, correlate their output, and display the data in a meaningful form to the system operator. Both sensitivity and selectivity are important considerations when evaluating the performance of a detection system. Depending on the application, the optimization of sensitivity as well as the rejection of ''nuisance'' radioactive sources may or may not be critical

Fabrication of advanced military radiation detector sensor and performance evaluation

Energy Technology Data Exchange (ETDEWEB)

Kang, Sin Yang

2010-02-15

Recently, our country is facing a continuous nuclear weapons threat. Therefore, we must have a high-level nuclear weapons protection system. The best protection against nuclear weapons is detecting their use to reduce casualties in our country to a minimum. That means, the development of a military radiation detector is a very important issue. The Korea army is using the 'PDR - 1K portable military radiation surveymeter' in NBC (Nuclear, Biological, Chemical warfare) operations. The PDR - 1K military detector can measure beta and gamma rays only but it cannot detect alpha particles. Because of its characteristics, the Korea army has weaknesses in tactical operations. The PDR - 1K sensor is based on a GM - tube sensor system. For the mechanical structure, detectors utilizing a GM-tube sensor do not work on a high - radiation battlefield and they do not carry out nuclide analysis for fixed electron signal output. In the meantime, the United States of America and Germany are using 'AN/PDR - 77' and 'SVG - 2' that were made from scintillator sensors. They have excellent physical qualities and radiation responses for military use. Also, nuclide analysis is available. Therefore, in this study we fabricated a military - grade scintillator radiation sensor that is able to detect alpha, beta, and gamma - rays to overcome PDR - 1K's weaknesses. Also, physical characteristics and radiation response evaluation for the fabricated sensors was carried out. The alpha - particle sensor and beta - ray sensor were fabricated using a ZnS(Ag) powder state scintillator, and a Saint - Gobain organic plastic scintillator BC-408 panel, respectively. The gamma ray sensor was manufactured using a 10 x 10 x 10 mm{sup 3} CsI(Tl) inorganic scintillator crystal. A detailed explanation follows. The alpha particle sensor was fabricated by using air - brushing method to Zns(Ag) powder scintillator spreading. The ZnS(Ag) layer thickness was 35 {mu}m (detection

Intelligent optimization models based on hard-ridge penalty and RBF for forecasting global solar radiation

International Nuclear Information System (INIS)

Jiang, He; Dong, Yao; Wang, Jianzhou; Li, Yuqin

2015-01-01

Highlights: • CS-hard-ridge-RBF and DE-hard-ridge-RBF are proposed to forecast solar radiation. • Pearson and Apriori algorithm are used to analyze correlations between the data. • Hard-ridge penalty is added to reduce the number of nodes in the hidden layer. • CS algorithm and DE algorithm are used to determine the optimal parameters. • Proposed two models have higher forecasting accuracy than RBF and hard-ridge-RBF. - Abstract: Due to the scarcity of equipment and the high costs of maintenance, far fewer observations of solar radiation are made than observations of temperature, precipitation and other weather factors. Therefore, it is increasingly important to study several relevant meteorological factors to accurately forecast solar radiation. For this research, monthly average global solar radiation and 12 meteorological parameters from 1998 to 2010 at four sites in the United States were collected. Pearson correlation coefficients and Apriori association rules were successfully used to analyze correlations between the data, which provided a basis for these relative parameters as input variables. Two effective and innovative methods were developed to forecast monthly average global solar radiation by converting a RBF neural network into a multiple linear regression problem, adding a hard-ridge penalty to reduce the number of nodes in the hidden layer, and applying intelligent optimization algorithms, such as the cuckoo search algorithm (CS) and differential evolution (DE), to determine the optimal center and scale parameters. The experimental results show that the proposed models produce much more accurate forecasts than other models

Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

Science.gov (United States)

Ghosh, P.

2014-07-01

The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 1014neqcm-2. Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors.

Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

International Nuclear Information System (INIS)

Ghosh, P

2014-01-01

The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 10 14 n eq cm −2 . Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors

Radiation-hard/high-speed parallel optical links

Energy Technology Data Exchange (ETDEWEB)

Gan, K.K., E-mail: gan@mps.ohio-state.edu [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Buchholz, P.; Heidbrink, S. [Fachbereich Physik, Universität Siegen, Siegen (Germany); Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S. [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Vogt, M.; Ziolkowski, M. [Fachbereich Physik, Universität Siegen, Siegen (Germany)

2016-09-21

We have designed and fabricated a compact parallel optical engine for transmitting data at 5 Gb/s. The device consists of a 4-channel ASIC driving a VCSEL (Vertical Cavity Surface Emitting Laser) array in an optical package. The ASIC is designed using only core transistors in a 65 nm CMOS process to enhance the radiation-hardness. The ASIC contains an 8-bit DAC to control the bias and modulation currents of the individual channels in the VCSEL array. The performance of the optical engine up at 5 Gb/s is satisfactory.

Development of radiation hard scintillators

International Nuclear Information System (INIS)

Markley, F.; Woods, D.; Pla-Dalmau, A.; Foster, G.; Blackburn, R.

1992-05-01

Substantial improvements have been made in the radiation hardness of plastic scintillators. Cylinders of scintillating materials 2.2 cm in diameter and 1 cm thick have been exposed to 10 Mrads of gamma rays at a dose rate of 1 Mrad/h in a nitrogen atmosphere. One of the formulations tested showed an immediate decrease in pulse height of only 4% and has remained stable for 12 days while annealing in air. By comparison a commercial PVT scintillator showed an immediate decrease of 58% and after 43 days of annealing in air it improved to a 14% loss. The formulated sample consisted of 70 parts by weight of Dow polystyrene, 30 pbw of pentaphenyltrimethyltrisiloxane (Dow Corning DC 705 oil), 2 pbw of p-terphenyl, 0.2 pbw of tetraphenylbutadiene, and 0.5 pbw of UVASIL299LM from Ferro

Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

International Nuclear Information System (INIS)

Riegel, C.; Backhaus, M.; Hoorne, J.W. Van; Kugathasan, T.; Musa, L.; Pernegger, H.; Riedler, P.; Schaefer, D.; Snoeys, W.; Wagner, W.

2017-01-01

A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS technologies, which include part or all of the readout chain, are also investigated offering a reduced cost as they are cheaper per unit area than traditional silicon detectors. If they contain the full readout chain, as for a fully monolithic approach, there is no need for the expensive flip-chip assembly, resulting in a further cost reduction and material savings. In the outer pixel layers of the ATLAS Inner Tracker, the pixel sensors must withstand non-ionising energy losses of up to 10 15 n/cm 2 and offer a timing resolution of 25 ns or less. This paper presents test results obtained on a monolithic test chip, the TowerJazz 180nm Investigator, towards these specifications. The presented program of radiation hardness and timing studies has been launched to investigate this technology's potential for the new ATLAS Inner Tracker.

A theoretical approach to photosynthetically active radiation silicon sensor

International Nuclear Information System (INIS)

Tamasi, M.J.L.; Martínez Bogado, M.G.

2013-01-01

This paper presents a theoretical approach for the development of low cost radiometers to measure photosynthetically active radiation (PAR). Two alternatives are considered: a) glass optical filters attached to a silicon sensor, and b) dielectric coating on a silicon sensor. The devices proposed are based on radiometers previously developed by the Argentine National Atomic Energy Commission. The objective of this work is to adapt these low cost radiometers to construct reliable instruments for measuring PAR. The transmittance of optical filters and sensor response have been analyzed for different dielectric materials, number of layers deposited, and incidence angles. Uncertainties in thickness of layer deposition were evaluated. - Highlights: • Design of radiometers to measure photosynthetically active radiation • The study has used a filter and a Si sensor to modify spectral response. • Dielectric multilayers on glass and silicon sensor • Spectral response related to different incidence angles, materials and spectra

Development of radiation-hard optical links for the CMS tracker at CERN

International Nuclear Information System (INIS)

Vasey, F.; Arbet-Engels, V.; Cervelli, G.; Gill, K.; Grabit, R.; Mommaert, C.; Stefanini, G.

1998-01-01

A radiation-hard optical link is under development for readout and control of the tracking detector in the future CMS experiment at the CERN Large Hadron Collider. The authors present the optical system architecture based on edge-emitting InGaAsP laser-diode transmitters operating at a wavelength of 1.3 microm, single mode fiber ribbons, multi-way connectors and InGaAsP in photodiode receivers. They report on radiation hardness tests of lasers, photodiodes, fibers and connectors. Increases of laser threshold and pin leakage currents with hadron fluence have been observed together with decreases in laser slope-efficiency and photodiode responsivity. Short lengths of single-mode optical fiber and multi-way connectors have been found to be little affected by radiation damage. They analyze the analog and digital performance of prototype optical links transmitting data generated at a 40 MSample/s rate. Distortion, settling time, bandwidth, noise, dynamic range and bit-error-rate results are discussed

R and D on Radiation Hard Active Media Based on Quartz Plates

CERN Document Server

Onel, Yasar

2014-01-01

The need for radiation-hard active media in particle detectors is prominently dictated by the future colliders and the future operations of the Large Hadron Collider. The areas of implementation range from calorimetry to beamline instrumentation to specialized forward detectors e.g. luminosity monitors. In this context, we developed the idea of utilizing quartz plates with various surface coating properties as the active medium for such detectors. Plain quartz is a pure Cerenkov radiator which has quite limited photostatistics. In order to improve the efficiency of the photodetection, various methods were investigated including radiation hard wavelength shifters, p-terphenyl or 4pct gallium doped zinc oxide. The readout options include direct coupling of the photodetector to the quartz plate, or fibers. We have studied various geometries and readout options and constructed calorimeter prototypes. Here we report on the results of the previous tests, and the recent developments, which enable several factors of ...

The radiation hardness of silica optical fiber used in the LED-fiber monitor of BLM and BESIII EMC

International Nuclear Information System (INIS)

Xue Zhen; Hu Tao; Fang Jian; Xu Zizong; Wang Xiaolian; Lü Junguang; Zhou Li; Cai Xiao; Yu Boxiang; Wang Zhigang; Sun Lijun; Sun Xilei; Zhang Aiwu

2012-01-01

LED-fiber system has been used to monitor BLM and BESIII EMC. A radiation hard silica optical fiber is essential for its stability and reliability. Three types of silica optical fibers, silicone-clad silica optical fiber with high OH - content (SeCS), silica-clad silica optical fiber with low OH - content (SCSL) and silica-clad silica opical fiber with high OH - content (SCSH) were studied. In the experiment, 12 groups of fiber samples were irradiated by 60 Co and 3 groups of fiber samples were irradiated by BEPCII background radiation. Radiation hardness: the radiation hardness of SCSH is best and meets the radiation hardness requirement for LED-fiber monitor of BLM and BESIII EMC. The transmission of SeCS and SCSH decreased to around 80% under the 60 Co-irradiation of 5 Gy and 10 Gy, respectively. The radiation hardness of SeCS is worst because of its silicone cladding. Recovery characteristics: 60 Co-irradiated by the same doses, there were both more annealable and more permanent color centers formed in SeCS than SCSL, and for the same kind of fibers, as long as the irradiated doses are under a certain amount (for example, less than 5 Gy for SeCS), the higher the doses, both the more annealable and the more permanent color centers are formed.

First bulk and surface results for the ATLAS ITk Strip stereo annulus sensors

CERN Document Server

Hunter, Robert Francis Holub; The ATLAS collaboration; Affolder, Tony; Bohm, Jan; Botte, James Michael; Ciungu, Bianca; Dette, Karola; Dolezal, Zdenek; Escobar, Carlos; Fadeyev, Vitaliy

2018-01-01

A novel microstrip sensor geometry, the stereo annulus, has been developed for use in the end-cap of the ATLAS experiment's strip tracker upgrade at the HL-LHC. Its first implementation is in the ATLAS12EC sensors a large-area, radiation-hard, single-sided, ac-coupled, \

CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation.

Science.gov (United States)

Hahn, C; Weber, G; Märtin, R; Höfer, S; Kämpfer, T; Stöhlker, Th

2016-04-01

Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays - such as laser-generated plasmas - is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse.

Miniaturized, low power FGMOSFET radiation sensor and wireless dosimeter system

KAUST Repository

Arsalan, Muhammad; Shamim, Atif; Tarr, Nicholas Garry; Roy, Langis

2013-01-01

A miniaturized floating gate (FG) MOSFET radiation sensor system is disclosed, The sensor preferably comprises a matched pair of sensor and reference FGMOSFETs wherein the sensor FGMOSFET has a larger area floating gate with an extension over a field oxide layer, for accumulation of charge and increased sensitivity. Elimination of a conventional control gate and injector gate reduces capacitance, and increases sensitivity, and allows for fabrication using standard low cost CMOS technology. A sensor system may be provided with integrated signal processing electronics, for monitoring a change in differential channel current I.sub.D, indicative of radiation dose, and an integrated negative bias generator for automatic pre-charging from a low voltage power source. Optionally, the system may be coupled to a wireless transmitter. A compact wireless sensor System on Package solution is presented, suitable for dosimetry for radiotherapy or other biomedical applications.

Miniaturized, low power FGMOSFET radiation sensor and wireless dosimeter system

KAUST Repository

Arsalan, Muhammad

2013-08-27

A miniaturized floating gate (FG) MOSFET radiation sensor system is disclosed, The sensor preferably comprises a matched pair of sensor and reference FGMOSFETs wherein the sensor FGMOSFET has a larger area floating gate with an extension over a field oxide layer, for accumulation of charge and increased sensitivity. Elimination of a conventional control gate and injector gate reduces capacitance, and increases sensitivity, and allows for fabrication using standard low cost CMOS technology. A sensor system may be provided with integrated signal processing electronics, for monitoring a change in differential channel current I.sub.D, indicative of radiation dose, and an integrated negative bias generator for automatic pre-charging from a low voltage power source. Optionally, the system may be coupled to a wireless transmitter. A compact wireless sensor System on Package solution is presented, suitable for dosimetry for radiotherapy or other biomedical applications.

UV radiation hardness of silicon inversion layer solar cells

International Nuclear Information System (INIS)

Hezel, R.

1990-01-01

For full utilization of the high spectral response of inversion layer solar cells in the very-short-wavelength range of the solar spectrum sufficient ultraviolet-radiation hardness is required. In addition to the charge-induced passivation achieved by cesium incorporation into the silicon nitride AR coating, in this paper the following means for further drastic reduction of UV light-induced effects in inversion layer solar cells without encapsulation are introduced and interpretations are given: increasing the nitride deposition temperature, silicon surface oxidation at low temperatures, and texture etching and using higher substrate resistivities. High UV radiation tolerance and improvement of the cell efficiency could be obtained simultaneously

Optical Fibre Temperature Sensor Based On A Blackbody Radiation

Science.gov (United States)

Hypszer, Ryszard; Plucinski, Jerzy; Wierzba, Henryk J.

1990-01-01

The principle of operation of the fibre optical temperature sensor based on a blackbody radiation and its construction model is given in the paper. A quartz rod of 0.6 mm diameter and 20 cm length with a blackbody cavity at the one end was used to construct the sensor. The cavity was made by vacuum evaporation of a chromium layer and a silicone monooxide layer was used as a protection. Infrared radiation is transmitted by the fibre optic to the detection circuit. This sensor enables temperature measurement from 400 to 1200°C. The range of measurement is determined by the detection sensitivity and by rod softening. The resolution is of the order of 10-2°C. The sensor calibration was done by using PtRh1O-Pt thermocouple.

Improvement of optical properties and radiation hardness of NaBi(WO sub 4) sub 2 Cherenkov crystals

CERN Document Server

Zadneprovski, B I; Polyansky, E V; Devitsin, E G; Kozlov, V A; Potashov, S Yu; Terkulov, A R

2002-01-01

On the basis of the data on melt evaporation while growing NaBi(WO sub 4) sub 2 Cherenkov crystals, the formation of nonstoichiometry and most probable types of dot defects of the crystals have been considered. The influence of melt nonstoichiometry and doping with Sc on optical transmission and radiation hardness of the crystals has been experimentally investigated. The surplus of WO sub 3 has been established to increase optical transmission and radiation hardness and lack of Bi sub 2 O sub 3 in the melt to reduce radiation hardness. Sc doping is shifting the absorption edge to UV region by 30-35 nm and is increasing radiation hardness of the crystals about three-fold. Analytical estimations give the increase of the number of Cherenkov photons by a factor of 1.3, which leads to an improvement of the energy resolution of a calorimeter based on NaBi(WO sub 4) sub 2 :Sc crystals compared with undoped NaBi(WO sub 4) sub 2 of approximately 15%.

A sensor element for direct radiation measurement

Energy Technology Data Exchange (ETDEWEB)

Bajons, P.; Wernhart, U.; Zeiler, H. [University of Vienna (Austria). Institut of Material Physics

1998-08-01

A combination of a photodiode with a nonimaging light concentrator is developed to perform measurements of the direct solar radiation component. A prototype composed of low price elements is taken as a starting point to discuss the problems which must be faced when calibrating such sensors. By this the influence of the angle of incidence and spectral distribution (caused by different air mass or varying degree of clearness) of the incident radiation on the behavior of the system is studied. The readings are compared to the calculated (global minus diffuse) readings obtained from two standard star pyranometers. Finally the possibilities for increasing the accuracy of the sensor element and for applying the device are discussed. (author)

Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

Science.gov (United States)

Pohl, D.-L.; Hemperek, T.; Caicedo, I.; Gonella, L.; Hügging, F.; Janssen, J.; Krüger, H.; Macchiolo, A.; Owtscharenko, N.; Vigani, L.; Wermes, N.

2017-06-01

Pixel sensors using 8'' CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 × 1015 neq cm-2. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.

Radiation hardness of Ce-doped sol-gel silica fibers for high energy physics applications.

Science.gov (United States)

Cova, Francesca; Moretti, Federico; Fasoli, Mauro; Chiodini, Norberto; Pauwels, Kristof; Auffray, Etiennette; Lucchini, Marco Toliman; Baccaro, Stefania; Cemmi, Alessia; Bártová, Hana; Vedda, Anna

2018-02-15

The results of irradiation tests on Ce-doped sol-gel silica using x- and γ-rays up to 10 kGy are reported in order to investigate the radiation hardness of this material for high-energy physics applications. Sol-gel silica fibers with Ce concentrations of 0.0125 and 0.05 mol. % are characterized by means of optical absorption and attenuation length measurements before and after irradiation. The two different techniques give comparable results, evidencing the formation of a main broad radiation-induced absorption band, peaking at about 2.2 eV, related to radiation-induced color centers. The results are compared with those obtained on bulk silica. This study reveals that an improvement of the radiation hardness of Ce-doped silica fibers can be achieved by reducing Ce content inside the fiber core, paving the way for further material development.

Classification of Reactor Facility Operational State Using SPRT Methods with Radiation Sensor Networks

Energy Technology Data Exchange (ETDEWEB)

Ramirez Aviles, Camila A. [ORNL; Rao, Nageswara S. [ORNL

2018-01-01

We consider the problem of inferring the operational state of a reactor facility by using measurements from a radiation sensor network, which is deployed around the facility’s ventilation stack. The radiation emissions from the stack decay with distance, and the corresponding measurements are inherently random with parameters determined by radiation intensity levels at the sensor locations. We fuse measurements from network sensors to estimate the intensity at the stack, and use this estimate in a one-sided Sequential Probability Ratio Test (SPRT) to infer the on/off state of the reactor facility. We demonstrate the superior performance of this method over conventional majority vote fusers and individual sensors using (i) test measurements from a network of NaI sensors, and (ii) emulated measurements using radioactive effluents collected at a reactor facility stack. We analytically quantify the performance improvements of individual sensors and their networks with adaptive thresholds over those with fixed ones, by using the packing number of the radiation intensity space.

Development of radiation hardened pixel sensors for charged particle detection

CERN Document Server

Koziel, Michal

2014-01-01

CMOS Pixel Sensors are being developed since a few years to equip vertex detectors for future high-energy physics experiments with the crucial advantages of a low material budget and low production costs. The features simultaneously required are a short readout time, high granularity and high tolerance to radiation. This thesis mainly focuses on the radiation tolerance studies. To achieve the targeted readout time (tens of microseconds), the sensor pixel readout was organized in parallel columns restricting in addition the readout to pixels that had collected the signal charge. The pixels became then more complex, and consequently more sensitive to radiation. Different in-pixel architectures were studied and it was concluded that the tolerance to ionizing radiation was limited to 300 krad with the 0.35- m fabrication process currently used, while the targeted value was several Mrad. Improving this situation calls for implementation of the sensors in processes with a smaller feature size which naturally imp...

Slim edge studies, design and quality control of planar ATLAS IBL pixel sensors

Energy Technology Data Exchange (ETDEWEB)

Wittig, Tobias

2013-05-08

One of the four large experiments at the LHC at CERN is the ATLAS detector, a multi purpose detector. Its pixel detector, composed of three layers, is the innermost part of the tracker. As it is closest to the interaction point, it represents a basic part of the track reconstruction. Besides the requested high resolution one main requirement is the radiation hardness. In the coming years the radiation damage will cause deteriorations of the detector performance. With the planned increase of the luminosity, especially after the upgrade to the High Luminosity LHC, this radiation damage will be even intensified. This circumstance necessitates a new pixel detector featuring improved radiation hard sensors and read-out chips. The present shutdown of the LHC is already utilized to insert an additional b-layer (IBL) into the existing ATLAS pixel detector. The current n-in-n pixel sensor design had to be adapted to the new read-out chip and the module specifications. The new stave geometry requests a reduction of the inactive sensor edge. In a prototype wafer production all modifications have been implemented. The sensor quality control was supervised which led to the decision of the final sensor thickness. In order to evaluate the performance of the sensor chip assemblies with an innovative slim edge design, they have been operated in test beam setups before and after irradiation. Furthermore, the quality control of the planar IBL sensor wafer production was supervised from the stage of wafer delivery to that before the flip chip process to ensure a sufficient amount of functional sensors for the module production.

Performance of commercial off-the-shelf microelectromechanical systems sensors in a pulsed reactor environment

Energy Technology Data Exchange (ETDEWEB)

Hobert, Keith Edwin [Los Alamos National Laboratory; Heger, Arlen S [Los Alamos National Laboratory; Mccready, Steven S [Los Alamos National Laboratory

2010-07-15

Prompted by the unexpected failure of piezoresistive sensors in both an elevated gamma-ray environment and reactor core pulse tests, we initiated radiation testing of several MEMS piezoresistive accelerometers and pressure transducers to ascertain their radiation hardness. Some commercial off-the-shelf sensors are found to be viable options for use in a high-energy pulsed reactor, but others suffer severe degradation and even catastrophic failure. Although researchers are promoting the use of MEMS devices in radiation-harsh environment, we nevertheless find assurance testing necessary.

A Radiation-Hard Analog Memory In The AVLSI-RA Process

International Nuclear Information System (INIS)

Britton, C.L. Jr.; Wintenberg, A.L.; Read, K.F.; Simpson, M.L.; Young, G.R.; Clonts, L.G.; Kennedy, E.J.; Smith, R.S.; Swann, B.K.; Musser, J.A.

1995-01-01

A radiation hardened analog memory for an Interpolating Pad Camber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500ns following read enable, an input and output dynamic range of +/-2.25V, a corrected rms pedestal of approximately 5mV or less, and a power dissipation of less than 10mW/channel. The pre- and post-radiation measurements to 5MRad are presented

Fabrication and a Study on the Tapered Scintillator Radiation Sensors

International Nuclear Information System (INIS)

Kim, Gye Hong

2003-02-01

Optical fibers have been investigated for their uses as sensor materials in various nuclear applications. Comprehensive overviews of their potential usages in nuclear environments can be found in the literatures. Optical fibers with doped scintillating elements in the core have drawn special interests as nuclear radiation detectors. The two important functions of a scintillating optical fiber, as a radiation detector, are scintillator (light emitter) and light transmitter. When radiation interacts with the core material, scintillation occurs and resultant lights are transmitted through the fiber to an opto-electronic device such as a photomultiplier tube. Optical fiber sensors have several advantages as compared to other sensors of conventional material. Since they do not require electric power in the sensor part, they are less susceptible to trouble in harsh environments such as underground or underwater. At relatively low cost a multi-point distributed radiation monitoring system could be made using the fiber sensors. Furthermore, unlike the conventional scintillating counters they are not influenced by any magnetic field surrounding them. This study has been conducted to investigate the feasibility of using scintillating optical fibers for the detection of gamma rays emitted by 137 Cs. Several types of gamma-ray sensors have been constructed by packing different numbers of fibers into aluminum tubes, and tested to detect the 137 Cs gamma ray. During the study it has been found that a tapered fibers might be more efficient to collect the lights produced inside the sensor and transfer them into the transmitting fiber. In order to investigate the effectiveness of the tapered fiber, tapered plastic scintillators, composed of polystyrene with minute amount of dPOPOP and PPO or bPBD, have been fabricated and tested for the detection of gamma rays from 1.0, 1.5, 3.0 and 5.0 μCi 137 Cs sources. The pulse height spectra and the relationship between the radioactivity and

Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

CERN Document Server

Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

2000-01-01

Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

Observation of The Top of The Atmosphere Outgoing Longwave Radiation Using The Geostationary Earth Radiation Budget Sensor

Science.gov (United States)

Spencer, G.; Llewellyn-Jones, D.

In the summer of 2002 the Meteosat Second Generation (MSG) satellite is due to be launched. On board the MSG satellite is the Geostationary Earth Radiation Budget (GERB) sensor. This is a new radiometer that will be able to observe and measure the outgoing longwave radiation from the top of the atmosphere for the whole ob- served Earth disc, due to its unique position in geostationary orbit. Every 15 minutes the GERB sensor will make a full Earth disc observation, centred on the Greenwich meridian. Thus, the GERB sensor will provide unprecedented coupled temporal and spatial resolution of the outgoing longwave radiation (4.0 to 30.0 microns), by first measuring the broadband radiation (0.32 to 30.0 microns) and then subtracting the measured reflected shortwave solar radiation (0.32 to 4.0 microns), from the earth- atmosphere system. The GERB sensor is able to make measurements to within an accuracy of 1 W/sq. m. A forward model is being developed at Leicester to simulate the data from the GERB sensor for representative geophysical scenes and to investigate key parameters and processes that will affect the top of the atmosphere signal. At the heart of this model is a line-by-line radiative transfer model, the Oxford Reference Forward Model (RFM) that is to be used with model atmospheres generated from ECMWF analysis data. When MSG is launched, cloud data from the Spinning Enhanced Visible and Infrared Imager (SEVIRI), also on board, is to be used in conjunction with GERB data.

Radiation detection and situation management by distributed sensor networks

International Nuclear Information System (INIS)

Jan, Frigo; Mielke, Angela; Cai, D. Michael

2009-01-01

Detection of radioactive materials in an urban environment usually requires large, portal-monitor-style radiation detectors. However, this may not be a practical solution in many transport scenarios. Alternatively, a distributed sensor network (DSN) could complement portal-style detection of radiological materials through the implementation of arrays of low cost, small heterogeneous sensors with the ability to detect the presence of radioactive materials in a moving vehicle over a specific region. In this paper, we report on the use of a heterogeneous, wireless, distributed sensor network for traffic monitoring in a field demonstration. Through wireless communications, the energy spectra from different radiation detectors are combined to improve the detection confidence. In addition, the DSN exploits other sensor technologies and algorithms to provide additional information about the vehicle, such as its speed, location, class (e.g. car, truck), and license plate number. The sensors are in-situ and data is processed in real-time at each node. Relevant information from each node is sent to a base station computer which is used to assess the movement of radioactive materials

Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak

Energy Technology Data Exchange (ETDEWEB)

Rasouli, C.; Pourshahab, B.; Rasouli, H. [Plasma Physics and Nuclear Fusion Research School, Nuclear Science and Technology Research Institute, AEOI, PO Box 14155-1339, Tehran (Iran, Islamic Republic of); Hosseini Pooya, S. M.; Orouji, T. [Radiation Application Research School, Nuclear Science and Technology Research Institute, AEOI, PO Box 14155-1339, Tehran (Iran, Islamic Republic of)

2014-05-15

In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points – three TLDs per point – to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology

CERN Multimedia

2002-01-01

% RD-9 A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology \\\\ \\\\Radiation hardened SOI-CMOS (Silicon-On-Insulator, Complementary Metal-Oxide- \\linebreak Semiconductor planar microelectronic circuit technology) was a likely candidate technology for mixed analog-digital signal processing electronics in experiments at the future high luminosity hadron colliders. We have studied the analog characteristics of circuit designs realized in the Thomson TCS radiation hard technologies HSOI3-HD. The feature size of this technology was 1.2 $\\mu$m. We have irradiated several devices up to 25~Mrad and 3.10$^{14}$ neutrons cm$^{-2}$. Gain, noise characteristics and speed have been measured. Irradiation introduces a degradation which in the interesting bandwidth of 0.01~MHz~-~1~MHz is less than 40\\%. \\\\ \\\\Some specific SOI phenomena have been studied in detail, like the influence on the noise spectrum of series resistence in the thin silicon film that constitutes the body of the transistor...

New results on diamond pixel sensors using ATLAS frontend electronics

International Nuclear Information System (INIS)

Keil, M.; Adam, W.; Berdermann, E.; Bergonzo, P.; Boer, W. de; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; Doucet, M.; Eijk, B. van; Fallou, A.; Fischer, P.; Fizzotti, F.; Kania, D.; Gan, K.K.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Knoepfle, K.T.; Koeth, T.; Krammer, M.; Logiudice, A.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Perera, L.; Riester, J.L.; Roe, S.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Trischuk, W.; Tromson, D.; Vittone, E.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

2003-01-01

Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented

New results on diamond pixel sensors using ATLAS frontend electronics

CERN Document Server

Keil, Markus; Berdermann, E; Bergonzo, P; de Boer, Wim; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dulinski, W

2003-01-01

Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

New results on diamond pixel sensors using ATLAS frontend electronics

Energy Technology Data Exchange (ETDEWEB)

Keil, M. E-mail: markus.keil@cern.ch; Adam, W.; Berdermann, E.; Bergonzo, P.; Boer, W. de; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; Doucet, M.; Eijk, B. van; Fallou, A.; Fischer, P.; Fizzotti, F.; Kania, D.; Gan, K.K.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Knoepfle, K.T.; Koeth, T.; Krammer, M.; Logiudice, A.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Perera, L.; Riester, J.L.; Roe, S.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Trischuk, W.; Tromson, D.; Vittone, E.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M

2003-03-21

Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

New results on diamond pixel sensors using ATLAS frontend electronics

Science.gov (United States)

Keil, M.; Adam, W.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; Doucet, M.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Kania, D.; Gan, K. K.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Perera, L.; Riester, J. L.; Roe, S.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Trischuk, W.; Tromson, D.; Vittone, E.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

2003-03-01

Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

CMOS front-end electronics for radiation sensors

CERN Document Server

AUTHOR|(CDS)2071026

2015-01-01

This book offers a comprehensive treatment of front-end electronics for radiation detection. It discusses the fundamental principles of signal processing for radiation detectors and describes circuits at the level of functional building blocks, omitting transistor-level implementation. It also covers important system-level topics commonly found in the world of front-end electronics for radiation sensors. The book develops the topics in detail, with a constant focus on practical problems. It also provides real implementation examples that offer insights and stimuli for more experienced engineers already working in the field.

Life evaluation of FR-CV cable on thermal-radiation combined aging by micro-hardness

International Nuclear Information System (INIS)

Sugiyama, Masahiko; Ogata, Akimasa; Nitta, Makoto; Tani, Tsuneo; Yagi, Toshiaki; Seguchi, Tadao.

1996-01-01

For the evaluation of cable life for the application to nuclear facilities, the accelerated test was conducted by the combination of radiation and thermal oxidation. The degradation of FR-CV cable by the aging was monitored by tensile test, micro-hardness test, and gel-fraction measurement. The micro-hardness increased with the progress of degradation and related well with decrease of ultimate elongation of the sheath material, and was also reflected by the loss of plasticizer. The micro-hardness technique has a possibility to detect the degradation of cable as a non-destructive detector. (author)

Radiation-hard semiconductor detectors for SuperLHC

CERN Document Server

Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim

2005-01-01

An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

A review of nanostructured based radiation sensors for neutron

Energy Technology Data Exchange (ETDEWEB)

Ahmad, Pervaiz; Mohamed, Norani Muti; Burhanudin, Zainal Arif [Center of Excellence in Nanotechnology Department of Fundamental and Applied Sciences, Department of Electrical and Electronic Engineering Universiti Teknologi PETRONAS (Malaysia)

2012-09-26

Currently radiation sensors with various mechanisms such as radio thermo luminescence, radiographic and radiochromic film, semiconductor and ionization have been used for the detection of nuclear radiation. Sensitivity, handling procedure, heating condition, energy response, nonlinearity, polarization, non-uniform electric field, high bias voltage and spatial resolution due to large physical size are some of the key issues faced by these sensors. Due to the excellent electrical and mechanical properties, nanostructured materials such as carbon nanotubes (CNTs) have been researched as sensing elements in the sensors to overcome the mentioned problems. However CNTs are found to pose different problems, arising from the uncontrolled helicity and small cross-sectional area. Therefore, alternative sensing elements are still been sought after and the possibility of using boron nitride nanotubes for sensing neutron is considered in this review.

Hard electronics; Hard electronics

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

Hard material technologies were surveyed to establish the hard electronic technology which offers superior characteristics under hard operational or environmental conditions as compared with conventional Si devices. The following technologies were separately surveyed: (1) The device and integration technologies of wide gap hard semiconductors such as SiC, diamond and nitride, (2) The technology of hard semiconductor devices for vacuum micro- electronics technology, and (3) The technology of hard new material devices for oxides. The formation technology of oxide thin films made remarkable progress after discovery of oxide superconductor materials, resulting in development of an atomic layer growth method and mist deposition method. This leading research is expected to solve such issues difficult to be easily realized by current Si technology as high-power, high-frequency and low-loss devices in power electronics, high temperature-proof and radiation-proof devices in ultimate electronics, and high-speed and dense- integrated devices in information electronics. 432 refs., 136 figs., 15 tabs.

Radiation tolerant fiber optic humidity sensors for High Energy Physics applications

CERN Document Server

Berruti, Gaia Maria; Cusano, Andrea

This work is devoted to the development of fiber optic humidity sensors to be applied in high-energy physics applications and in particular in experiments currently running at CERN. The high radiation level resulting from the operation of the accelerator at full luminosity can cause serious performance deterioration of the silicon sensors which are responsible for the particle tracking. To increase their lifetime, the sensors must be kept cold at temperatures below 0 C. At such low temperatures, any condensation risk has to be prevented and a precise thermal and hygrometric control of the air filling and surrounding the tracker detector cold volumes is mandatory. The technologies proposed at CERN for relative humidity monitoring are mainly based on capacitive sensing elements which are not designed with radiation resistance characteristic. In this scenario, fiber optic sensors seem to be perfectly suitable. Indeed, the fiber itself, if properly selected, can tolerate a very high level of radiation, optical fi...

Comparison of relevant parameters of multi-pixel sensors for tracker detectors after irradiation with high proton and neutron fluences

International Nuclear Information System (INIS)

Bergholz, Matthias

2016-03-01

The further increase of the luminosity of the Large Hadron Collider (LHC) at CERN requires new sensors for the tracking detector of the Compact Muon Soleniod (CMS) experiment. These sensors must be more radiation hard and of a finer granularity to lower the occupancy. In addition the new sensor modules must have a lower material budget and have to be self triggering. Sensor prototypes, the so called ''MPix''-sensors, produced on different materials were investigated for their radiation hardness. These sensors were fully characterized before and after irradiation. Of particular interest was the comparison of different bias methods, different materials and the influence of various geometries. The degeneration rate differs for the different sensor materials. The increase of the dark current of Float-Zone-Silicon is stronger for thicker sensors and less than for Magnetic-Czochralski-Silicon sensors. Both tested bias structures are damaged by the irradiation. The poly silicon resistance increases after irradiation by fifty percent. The Punch-Through-Structure is more effected by irradiation. The punch-through voltage increase by a factor of two. Due to the higher pixel current, the working point of the sensor is shifted to smaller differential resistances.

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

Science.gov (United States)

Wong, Man Hoi; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

2018-01-01

The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.

A Study on the Response Characteristics of a Fiber-Optic Radiation Sensor Model Based on Cerenkov Principle

Energy Technology Data Exchange (ETDEWEB)

Han, Hwa Jeong; Kim, Beom Kyu; Park, Byung Gi [Soonchunhyang Univ., Asan (Korea, Republic of)

2016-10-15

In recent year, various fiber-optic radiation sensors using Cerenkov principle have been developed without employing any scintillators for measuring high-energy photon, electron, etc. The main advantages of the optical fibers are the remote transmission of the light signal and immunity to pressure and electromagnetic waves. Therefore, the sensors utilizing the optical fibers can be used in hazardous radiation environments, such as the high-level radiation areas of a nuclear facility. The study to be simulated a fiber-optic radiation sensor based on Cerenkov principle and to be analyzed the response characteristics of the sensor. For the aforementioned study, the GEANT simulation toolkit was used. It is able to take into all the optical properties of fibers and is found to be appropriate to realistically describe the response of fiber-optic radiation sensor. In the recently, the fiber-optic radiation sensor have been developed in nuclear industry. Because sensor can detect gamma ray in harsh nuclear environments. In this study, we analyzed response characteristics of the fiber-optic radiation sensor. We have simulated the Monte Carlo model, for detecting the Cerenkov radiation using the fiber-optic radiation sensor. And the y-axis distribution of Cerenkov photons was obtained using output file. Simulation is performed with reference to the method of the previous research, and then the simulation results exhibited a good agreement with the previous research.

A Study on the Response Characteristics of a Fiber-Optic Radiation Sensor Model Based on Cerenkov Principle

International Nuclear Information System (INIS)

Han, Hwa Jeong; Kim, Beom Kyu; Park, Byung Gi

2016-01-01

In recent year, various fiber-optic radiation sensors using Cerenkov principle have been developed without employing any scintillators for measuring high-energy photon, electron, etc. The main advantages of the optical fibers are the remote transmission of the light signal and immunity to pressure and electromagnetic waves. Therefore, the sensors utilizing the optical fibers can be used in hazardous radiation environments, such as the high-level radiation areas of a nuclear facility. The study to be simulated a fiber-optic radiation sensor based on Cerenkov principle and to be analyzed the response characteristics of the sensor. For the aforementioned study, the GEANT simulation toolkit was used. It is able to take into all the optical properties of fibers and is found to be appropriate to realistically describe the response of fiber-optic radiation sensor. In the recently, the fiber-optic radiation sensor have been developed in nuclear industry. Because sensor can detect gamma ray in harsh nuclear environments. In this study, we analyzed response characteristics of the fiber-optic radiation sensor. We have simulated the Monte Carlo model, for detecting the Cerenkov radiation using the fiber-optic radiation sensor. And the y-axis distribution of Cerenkov photons was obtained using output file. Simulation is performed with reference to the method of the previous research, and then the simulation results exhibited a good agreement with the previous research

Optical fiber radiation sensors: first in vivo measurements during orbital irradiation

International Nuclear Information System (INIS)

Gripp, S.; Bannach, B.; Muskalla, K.; Haesing, F.; Bueker, H.; Schmitt, G.

1995-01-01

Purpose: To investigate the applicability of doped optical fiber radiation sensors in clinical dosimetry. Methods: Ionizing radiation causes a dose depending discoloring in silica. When proper impurities (doping agents) are added, the radiation sensitivity may be increased to a range suited for clinical dosimetry. We performed in-vivo-measurements using a lead doped silica fiber (d TM ) in comparison to thermoluminescence detectors (TLDs). Results: The scattered radiation is easily detected with this sensor fiber. In contrast to TLDs the dose and doserate values are obtained immediately and setup errors can be recognized before irradiation is completed. The SD clearly depends on setup modifications due to the extent of disease. Other doping agents (GeP) provide better tissue equivalence and less energy dependence. Conclusions: Optical fibers are suitable for in vivo dosimetry purposes. Fiber sensors provide real time dose values, and the readout procedure is much easier compared to TLDs. These features may gain significance in quality assurance, conformal therapy, and intraoperative radiotherapy (IORT)

Study of the Radiation-Hardness of VCSEL and PIN

CERN Document Server

Gan, K K; Fernando, W; Kagan, H P; Kass, R D; Lebbai, M R M; Merritt, H; Moore, J R; Nagarkar, A; Rizatdinova, F; Skubic, P L; Smith, D S; Strang, M

2009-01-01

The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.

Radiation hard silicon detectors - developments by the RD48(ROSE) collaboration

Czech Academy of Sciences Publication Activity Database

Lindström, G.; Kohout, Z.; Pospíšil, S.; Šícho, Petr; Sopko, B.; Vrba, Václav; Wilhelm, I.

2001-01-01

Roč. 466, č. 2 (2001), s. 308-326 ISSN 0168-9002 R&D Projects: GA MŠk LN00A006 Institutional research plan: CEZ:AV0Z1010920 Keywords : silicon detectors * radiation hardness * defect engineering * non ionizing energy los Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.026, year: 2001

Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

CERN Document Server

Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

1999-01-01

Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

Final Technical Report Radiation Hard Tight Pitch GaInP SPAD Arrays for High Energy Physics

Energy Technology Data Exchange (ETDEWEB)

Harmon, Eric

2018-01-26

The specialized photodetectors used in high energy physics experiments often need to remain extremely sensitive for years despite radiation induced damage caused by the constant bombardment of high energy particles. To solve this problem, LightSpin Technologies, Inc. in collaboration with Prof. Bradley Cox and the University of Virginia is developing radiation-hard GaInP photodetectors which are projected to be extraordinarily radiation hard, theoretically capable of withstanding a 100,000-fold higher radiation dose than silicon. In this Phase I SBIR project, LightSpin investigated the performance and radiation hardness of fifth generation GaInP SPAD arrays. These fifth generation devices used a new planar processing approach that enables very tight pitch arrays to be produced. High performance devices with SPAD pitches of 11, 15, and 25 μm were successfully demonstrated, which greatly increased the dynamic range and maximum count rate of the devices. High maximum count rates are critical when considering radiation hardness, since radiation damage causes a proportional increase in the dark count rate, causing SPAD arrays with low maximum count rates (large SPAD pitches) to fail. These GaInP SPAD array Photomultiplier Chips™ were irradiated with protons, electrons, and neutrons. Initial irradiation results were disappointing, with the post-irradiation devices exhibiting excessively high dark currents. The degradation was traced to surface leakage currents that were largely eliminated through the use of trenches etched around the exterior of the Photomultiplier Chip™ (not between SPAD elements). A second round of irradiations on Photomultiplier Chips™ with trenches proved substantially more successful, with post-irradiation dark currents remaining relatively low, though dark count rates were observed to increase at the highest doses. Preliminary analysis of the post-irradiation devices is promising … many of the irradiated Photomultiplier Chips™ still

Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

Science.gov (United States)

Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

2013-09-01

Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

Radiation hardness studies for DEPFETs in Belle II

International Nuclear Information System (INIS)

Ritter, Andreas

2014-01-01

The study of CP violation requires dedicated detectors and accelerators. At KEK, the High Energy Accelerator Research Organization located in Tsukuba, Japan, an upgrade of the present accelerator KEKB and its detector is in progress. For this new Belle II detector, a new vertex system will be installed, consisting of a silicon strip detector (SVD) and a pixel detector (PXD). The PXD exhibits eight million pixels, each of them made of Depleted p-channel Field Effect Transistors (DEPFETs). During the operation of Belle II various machine- as well as luminosity-related background processes affect the device performance of the DEPFET through radiation damage. As a Metal-Oxide-Semiconductor (MOS) device, the DEPFET is affected by ionizing radiation damage as well as by damages to the silicon bulk itself. The major part of the radiation damage has its origin in the creation of electrons and positrons near the interaction point. Therefore, the hardness factor of electrons of relevant energy was investigated in this work. With this quantity the damage by electrons could be compared to the damage inflicted by neutrons. Neutron irradiations were performed with DEPFETs and related silicon material. The effects of leakage current increase and type inversion were studied. As the electron hardness investigation indicates, the bulk damage done to the DEPFET is small in comparison to the impact on the silicon dioxide layer of the device. Ionizing radiation results in a build-up of oxide charge, thus changing the device characteristics. Especially the threshold voltage of the DEPFET is shifted to more negative values. This shift has to be compensated during the operation of Belle II and is limited by device and system constraints, thus an overall small shift is desired. The changes in the device characteristics were investigated for the two gate electrodes of the DEPFET with respect to their biasing and production related issues. With an additional layer of silicon nitride and a

Applications of Elpasolites as a Multimode Radiation Sensor

Science.gov (United States)

Guckes, Amber

This study consists of both computational and experimental investigations. The computational results enabled detector design selections and confirmed experimental results. The experimental results determined that the CLYC scintillation detector can be applied as a functional and field-deployable multimode radiation sensor. The computational study utilized MCNP6 code to investigate the response of CLYC to various incident radiations and to determine the feasibility of its application as a handheld multimode sensor and as a single-scintillator collimated directional detection system. These simulations include: • Characterization of the response of the CLYC scintillator to gamma-rays and neutrons; • Study of the isotopic enrichment of 7Li versus 6Li in the CLYC for optimal detection of both thermal neutrons and fast neutrons; • Analysis of collimator designs to determine the optimal collimator for the single CLYC sensor directional detection system to assay gamma rays and neutrons; Simulations of a handheld CLYC multimode sensor and a single CLYC scintillator collimated directional detection system with the optimized collimator to determine the feasibility of detecting nuclear materials that could be encountered during field operations. These nuclear materials include depleted uranium, natural uranium, low-enriched uranium, highly-enriched uranium, reactor-grade plutonium, and weapons-grade plutonium. The experimental study includes the design, construction, and testing of both a handheld CLYC multimode sensor and a single CLYC scintillator collimated directional detection system. Both were designed in the Inventor CAD software and based on results of the computational study to optimize its performance. The handheld CLYC multimode sensor is modular, scalable, low?power, and optimized for high count rates. Commercial?off?the?shelf components were used where possible in order to optimize size, increase robustness, and minimize cost. The handheld CLYC multimode

Monitoring system for testing the radiation hardness of a KINTEX-7 FPGA

Energy Technology Data Exchange (ETDEWEB)

Cojocariu, L. N., E-mail: lucian.cojocariu@cern.ch [Horia Hulubei National Institute for R& D in Physics and Nuclear Engineering (Reactorului 30, MG, Romania) (Romania); Stefan cel Mare University of Suceava (Universitatii 13, Suceava, Romania) (Romania); Placinta, V. M., E-mail: vlad-mihai.placinta@cern.ch [Horia Hulubei National Institute for R& D in Physics and Nuclear Engineering (Reactorului 30, MG, Romania) (Romania); University POLITEHNICA of Bucharest (Splaiul Independentei 313, Bucharest, Romania) (Romania); Dumitru, L., E-mail: dlaur@nipne.ro [Horia Hulubei National Institute for R& D in Physics and Nuclear Engineering (Reactorului 30, MG, Romania) (Romania)

2016-03-25

A much more efficient Ring Imaging Cherenkov sub-detector system will be rebuilt in the second long shutdown of Large Hadron Collider for the LHCb experiment. Radiation-hard electronic components together with Commercial Off-The-Shelf ones will be used in the new Cherenkov photon detection system architecture. An irradiation program was foreseen to determine the radiation tolerance for the new electronic devices, including a Field Programmable Gate Array from KINTEX-7 family of XILINX. An automated test bench for online monitoring of the XC7K70T KINTEX-7 device operation in radiation conditions was designed and implemented by the LHCb Romanian group.

3D radiation sensors with three dimensional electrodes

CERN Document Server

Da Via, Cinzia; Parker, Sherwood

2018-01-01

This book covers the technical properties, fabrication details, measurement results and applications of three-dimensional silicon radiation sensors. Such devices are currently used in the ATLAS experiment at the European Centre for Particle Physics (CERN) for particle tracking in high energy physics. They are the radiation hardest devices ever fabricated. They have applications in neutron detection, medical dosimetry and space. Written by the leading names in this field, the book explains to non-experts the essential features of silicon particle detectors, interactions of radiation with matter, radiation damage effects, and micro-fabrication. It also provides an historical view of the above.

Passive radiation detection using optically active CMOS sensors

Science.gov (United States)

Dosiek, Luke; Schalk, Patrick D.

2013-05-01

Recently, there have been a number of small-scale and hobbyist successes in employing commodity CMOS-based camera sensors for radiation detection. For example, several smartphone applications initially developed for use in areas near the Fukushima nuclear disaster are capable of detecting radiation using a cell phone camera, provided opaque tape is placed over the lens. In all current useful implementations, it is required that the sensor not be exposed to visible light. We seek to build a system that does not have this restriction. While building such a system would require sophisticated signal processing, it would nevertheless provide great benefits. In addition to fulfilling their primary function of image capture, cameras would also be able to detect unknown radiation sources even when the danger is considered to be low or non-existent. By experimentally profiling the image artifacts generated by gamma ray and β particle impacts, algorithms are developed to identify the unique features of radiation exposure, while discarding optical interaction and thermal noise effects. Preliminary results focus on achieving this goal in a laboratory setting, without regard to integration time or computational complexity. However, future work will seek to address these additional issues.

Test and Evaluation of Fiber Optic Sensors for High-Radiation Space Nuclear Power Applications

International Nuclear Information System (INIS)

Klemer, Daniel; Fielder, Robert S.; Stinson-Bagby, Kelly L.

2004-01-01

Fiber optic sensors can be used to measure a number of parameters, including temperature, strain, pressure and flow, for instrumentation and control of space nuclear power systems. In the past, this technology has often been rejected for use in such a high-radiation environment based on early experiments that revealed a number of degradation phenomena, including radiation-induced fiber attenuation, or 'graying', and Fiber Bragg Grating (FBG) fading and wavelength shift. However, this paper reports the results of recent experimental testing that demonstrates readability of fiber optic sensors to extremely high levels of neutron and gamma radiation. Both distributed Fiber Bragg Grating (FBG) sensors and single-point Extrinsic Fabry Perot Interferometer (EFPI) sensors were continuously monitored over a 2-month period, during which they were exposed to combined neutron and gamma radiation in both in-core and ex-core positions within a nuclear reactor. Total exposure reached approximately 2 x 10 19 cm -2 fast neutron (E > 1 MeV) fluence and 8.7 x 10 8 Gy gamma for in-core sensors. FBG sensors were interrogated using a standard Luna Innovations FBG measurement system, which is based on optical frequency-domain reflectometer (OFDR) technology. Approximately 74% of the 19 FBG sensors located at the core centerline in the in-core position exhibited sufficient signal-to-noise ratio (SNR) to remain readable even after receiving the maximum dose. EFPI sensors were spectrally interrogated using a broadband probe source operating in the 830 nm wavelength region. While these single-point sensors failed early in the test, important additional fiber spectral transmission data was collected, which indicates that interrogation of EFPI sensors in alternate wavelength regions may allow significant improvement in sensor longevity for operation in high-radiation environments. This work was funded through a Small Business Innovative Research (SBIR) contract with the Nasa Glenn Research

Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

International Nuclear Information System (INIS)

Clement, J.J.

1980-01-01

The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

Biological Sensors for Solar Ultraviolet Radiation

Directory of Open Access Journals (Sweden)

André P. Schuch

2011-04-01

Full Text Available Solar ultraviolet (UV radiation is widely known as a genotoxic environmental agent that affects Earth ecosystems and the human population. As a primary consequence of the stratospheric ozone layer depletion observed over the last decades, the increasing UV incidence levels have heightened the concern regarding deleterious consequences affecting both the biosphere and humans, thereby leading to an increase in scientific efforts to understand the role of sunlight in the induction of DNA damage, mutagenesis, and cell death. In fact, the various UV-wavelengths evoke characteristic biological impacts that greatly depend on light absorption of biomolecules, especially DNA, in living organisms, thereby justifying the increasing importance of developing biological sensors for monitoring the harmful impact of solar UV radiation under various environmental conditions. In this review, several types of biosensors proposed for laboratory and field application, that measure the biological effects of the UV component of sunlight, are described. Basically, the applicability of sensors based on DNA, bacteria or even mammalian cells are presented and compared. Data are also presented showing that on using DNA-based sensors, the various types of damage produced differ when this molecule is exposed in either an aqueous buffer or a dry solution. Apart from the data thus generated, the development of novel biosensors could help in evaluating the biological effects of sunlight on the environment. They also emerge as alternative tools for using live animals in the search for protective sunscreen products.

Low-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Electronics

Science.gov (United States)

McMorrow, Julian

memory (SRAM) cells, an accomplishment that illustrates the technological relevance of this work by implementing a highly utilized component of modern day computing. Next, these SRAM devices demonstrate functionality as true random number generators (TRNGs), which are critical components in cryptography and encryption. The randomness of these SWCNT TRNGs is verified by a suite of statistical tests. This achievement has implications for securing data and communication in future solution-processed, large-area, flexible electronics. The unprecedented integration achieved by the underlying SWCNT doping and encapsulation motivates the study of this technology in a radiation environment. Doing so results in an understanding of the fundamental charge trapping mechanisms responsible for the radiation response in this system. The integrated nature of these devices enables, for the first time, the observation of system-level effects in a SWCNT integrated circuit technology. This technology is found to be total ionizing dose-hard, a promising result for the adoption of SWCNTs in future space-bound applications. Compared to SWCNTs, the field of MoS2 electronics is relatively nascent. As a result, studies of radiation effects in MoS2 devices focus on the fundamental mechanisms at play in the materials system. Here, we reveal the critical role of atmospheric adsorbates in the radiation effects of MoS2 transistors by measuring their response to vacuum ultraviolet radiation. These results highlight the importance of controlling the atmosphere of MoS2 devices during irradiation. Furthermore, we make recommendations for radiation-hard MoS2-based devices in the future as the technology continues to mature. One such recommendation is the incorporation of specialized dielectrics with proven radiation hardness. To this end, we address the materials integration challenge of incorporating SAND gate dielectrics on arbitrary substrates. We explore a novel approach for preparing metal substrates

A Sensor-based System for Monitoring Hard-shoulder Incursions: Review of Technologies and Selection Criteria

Directory of Open Access Journals (Sweden)

Michalaki Paraskevi

2016-01-01

Full Text Available According to safety observations from motorway operators in the United Kingdom, the hard-shoulder is occasionally violated by road users travelling in the nearside lane. These unintentional movements (hard-shoulder incursions can impose risk to operatives performing activities on the network. To further investigate these events, a sensor-based system can be used for monitoring them and collecting related data such as severity of incursion and vehicle classification. A review of vehicle detection technologies that could be applied for this purpose is presented, along with the criteria for selection of the most suitable technology and implementation sites. Two potential non-intrusive systems are also described, a laser- and a radar-based systems, which provide different levels of flexibility and data.

The wireless sensor network monitoring system for regional environmental nuclear radiation

International Nuclear Information System (INIS)

Liu Chong; Liu Dao; Wang Yaojun; Xie Yuxi; Song Lingling

2012-01-01

The wireless sensor network (WSN) technology has been utilized to design a new regional environmental radiation monitoring system based on the wireless sensor networks to meet the special requirements of monitoring the nuclear radiation in certain regions, and realize the wireless transmission of measurement data, information processing and integrated measurement of the nuclear radiation and the corresponding environmental parameters in real time. The system can be applied to the wireless monitoring of nuclear radiation dose in the nuclear radiation environment. The measured data and the distribution of radiation dose can be vividly displayed on the graphical interface in the host computer. The system has functioned with the wireless transmission and control, the data storage, the historical data inquiry, the node remote control. The experimental results show that the system has the advantages of low power consumption, stable performance, network flexibility, range of measurement and so on. (authors)

Radiation hardness of superconducting magnet insulation materials for FAIR

International Nuclear Information System (INIS)

Seidl, Tim

2013-03-01

This thesis focuses on radiation degradation studies of polyimide, polyepoxy/glass-fiber composites and other technical components used, for example, in the superconducting magnets of new ion accelerators such as the planned International Facility for Antiproton and Ion Research (FAIR) at the GSI Helmholtz Center of Heavy Ion Research (GSI) in Darmstadt. As accelerators are becoming more powerful, i.e., providing larger energies and beam intensities, the potential risk of radiation damage to the components increases. Reliable data of the radiation hardness of accelerator materials and components concerning electrical, thermal and other technical relevant properties are of great interest also for other facilities such as the Large Hadron Collider (LHC) of CERN. Dependent on the position of the different components, induced radiation due to beam losses consists of a cocktail of gammas, neutrons, protons, and heavier particles. Although the number of heavy fragments of the initial projectiles is small compared to neutrons, protons, or light fragments (e.g. ? particles), their large energy deposition can induce extensive damage at rather low fluences (dose calculations show that the contribution of heavy ions to the total accumulated dose can reach 80 %). For this reason, defined radiation experiments were conducted using different energetic ion beams (from protons to uranium) and gamma radiation from a Co-60 source. The induced changes were analyzed by means of in-situ and ex-situ analytical methods, e.g. ultraviolet-visible and infrared spectroscopy, residual gas analysis, thermal gravimetric analysis, dielectric strength measurements, measurements of low temperature thermal properties, and performance tests. In all cases, the radiation induces a change in molecular structure as well as loss of functional material properties. The amount of radiation damage is found to be sensitive to the used type of ionizing radiation and the long term stability of the materials is

Shield or not to Shield: Effects of Solar Radiation on Water Temperature Sensor Accuracy

Directory of Open Access Journals (Sweden)

Robert L. Wilby

2013-10-01

Full Text Available Temperature sensors are potentially susceptible to errors due to heating by solar radiation. Although this is well known for air temperature (Ta, significance to continuous water temperature (Tw monitoring is relatively untested. This paper assesses radiative errors by comparing measurements of exposed and shielded Tinytag sensors under indirect and direct solar radiation, and in laboratory experiments under controlled, artificial light. In shallow, still-water and under direct solar radiation, measurement discrepancies between exposed and shielded sensors averaged 0.4 °C but can reach 1.6 °C. Around 0.3 °C of this inconsistency is explained by variance in measurement accuracy between sensors; the remainder is attributed to solar radiation. Discrepancies were found to increase with light intensity, but to attain Tw differences in excess of 0.5 °C requires direct, bright solar radiation (>400 W m−2 in the total spectrum. Under laboratory conditions, radiative errors are an order of magnitude lower when thermistors are placed in flowing water (even at velocities as low as 0.1 m s−1. Radiative errors were also modest relative to the discrepancy between different thermistor manufacturers. Based on these controlled experiments, a set of guidelines are recommended for deploying thermistor arrays in water bodies.

Radiation Resistance Test of Wireless Sensor Node and the Radiation Shielding Calculation

Energy Technology Data Exchange (ETDEWEB)

Li, Liqan; Sur, Bhaskar [Atomic Energy of Canada Limited, Ontario (Canada); Wang, Quan [University of Western Ontario, Ontario (Canada); Deng, Changjian [The University of Electronic Science and Technology, Chengdu (China); Chen, Dongyi; Jiang, Jin [Applied Physics Branch, Ontario (Korea, Republic of)

2014-08-15

A wireless sensor network (WSN) is being developed for nuclear power plants. Amongst others, ionizing radiation resistance is one essential requirement for WSN to be successful. This paper documents the work done in Chalk River Laboratories of Atomic Energy of Canada Limited (AECL) to test the resistance to neutron and gamma radiation of some WSN nodes. The recorded dose limit that the nodes can withstand before being damaged by the radiation is compared with the radiation environment inside a typical CANDU (CANada Deuterium Uranium) power plant reactor building. Shielding effects of polyethylene, cadmium and lead to neutron and gamma radiations are also analyzed using MCNP simulation. The shielding calculation can be a reference for the node case design when high dose rate or accidental condition (like Fukushima) is to be considered.

Energy Dependence of Proton Radiation Damage in Si-Sensors

CERN Document Server

AUTHOR|(CDS)2084399; Neubüser, C.

2014-01-01

Irradiation experiments on silicon sensors are used to mimic the radiation environment at collider experiments with the aim to forecast the change of the electrical properties of a detector with irradiation. Measurements on irradiated sensors are invaluable in choosing a material well suited for a silicon tracking detector. This is especially true for the upgraded detectors to be used in the high-luminosity phase of the LHC (HL-LHC), where silicon sensors as currently used would suffer severe loss in signal from irradiation with charged and neutral hadrons.\\\\ The CMS Tracker Collaboration has initiated irradiation studies with protons with energies ranging from 23 MeV to 23 GeV. They are often used instead of charged hadrons, their radiation induced damage to the silicon being rather similar. However, in oxygen rich silicon, NIEL violation concerning the full depletion voltage has been observed.\\\\ In this paper results from investigations on bulk defects compared to the change of the electrical properties of ...

Performance of Radiation Hard Pixel Sensors for the CMS Experiment

CERN Document Server

Dorokhov, Andrei

2005-01-01

Position sensitive detectors in particle physics experiments are used for the detection of the particles trajectory produced in high energy collisions. To study physics phenomena at high energies the high particle interaction rate is unavoidable, as the number of interesting events falls with the energy and the total number of events is dominated by the soft processes. The position resolution of vertex detectors has to be of few microns in order to distinguish between particle tracks produced in b-quark or tau-decays, because of the short flight path before the decay. The high spatial position resolution and the ability to detect a large number of superimposed track are the key features for tracking detectors. Modern silicon microstrip and pixel detectors with high resolution are currently most suitable devices for the tracking systems of high energy physics experiments. In this work the performance of the sensors designed for the CMS pixel detector are studied and the position resolution is estimated. In the...

Nuclear radiation sensors and monitoring following a nuclear or radiological emergencies

International Nuclear Information System (INIS)

Bhatnagar, P.K.

2009-01-01

Management of Nuclear and Radiological Emergencies arising from Radiological Dispersive Device (RDD), Improvised Nuclear Devices (IND), Nuclear Reactors/Power plants and Nuclear War require measurement of ionizing radiations and radioactivity on an enhanced scale relative to the levels encountered in peaceful uses of ionizing radiations and radioactivity. It is heartening that since Hiroshima, Nagasaki nuclear disaster, the world has been quiet but since early 2000 there has been a fear of certain devices to be used by terrorists, which could lead to panic, and disaster due to dispersal of radioactivity by RDD, IND. Nuclear attack would lead to blast, thermal, initial nuclear radiation, nuclear fall out leading to gamma and neutron dose, dose rates in range from few R, R/h to kR, kR/h, and determinations of k Bq or higher order. Such situations have been visualized at national levels and National Disaster Management Authority NDMA has been established and Disaster Management Act 2005 has come into existence. NDMA has prepared guidelines for Nuclear and radiological emergency management highlighting preparedness, mitigation, response, capacity building, etc. Critical point in all these issues is detection of emergency, quick intimation to the concerned for action in shortest possible time. Upper most requirement by those involved in pursuing action, is radiation sensor based radiation monitors for personnel, area, and to assess contamination due to radioactivity.This presentation briefly describes the Indian scenario in the development of the radiation sensors and the sensor-based radiation monitors. (author)

Nuclear radiation sensors and monitoring following a nuclear or radiological emergencies

Energy Technology Data Exchange (ETDEWEB)

Bhatnagar, P K [Defence Laboratory, Jodhpur (India)

2009-01-15

Management of Nuclear and Radiological Emergencies arising from Radiological Dispersive Device (RDD), Improvised Nuclear Devices (IND), Nuclear Reactors/Power plants and Nuclear War require measurement of ionizing radiations and radioactivity on an enhanced scale relative to the levels encountered in peaceful uses of ionizing radiations and radioactivity. It is heartening that since Hiroshima, Nagasaki nuclear disaster, the world has been quiet but since early 2000 there has been a fear of certain devices to be used by terrorists, which could lead to panic, and disaster due to dispersal of radioactivity by RDD, IND. Nuclear attack would lead to blast, thermal, initial nuclear radiation, nuclear fall out leading to gamma and neutron dose, dose rates in range from few R, R/h to kR, kR/h, and determinations of k Bq or higher order. Such situations have been visualized at national levels and National Disaster Management Authority NDMA has been established and Disaster Management Act 2005 has come into existence. NDMA has prepared guidelines for Nuclear and radiological emergency management highlighting preparedness, mitigation, response, capacity building, etc. Critical point in all these issues is detection of emergency, quick intimation to the concerned for action in shortest possible time. Upper most requirement by those involved in pursuing action, is radiation sensor based radiation monitors for personnel, area, and to assess contamination due to radioactivity.This presentation briefly describes the Indian scenario in the development of the radiation sensors and the sensor-based radiation monitors. (author)

First Production of New Thin 3D Sensors for HL- LHC at FBK

CERN Document Server

Sultan, DMS; Mendicino, R; Boscardin, M; Ronchin, S; Zorzi, N

2018-01-01

Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the “Phase 2” High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2×1016 neq.cm-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50×50 or 25×100 μm2 cell size), thinner active region (~100 μm), narrower columnar electrodes (~5μm diameter) with reduced inter-electrode spacing (~30 μm), and very slim edges (~100 μm). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6” substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage ...

Vulnerability of OFDR-based distributed sensors to radiations

Energy Technology Data Exchange (ETDEWEB)

Rizzolo, S. [Laboratoire Hubert Curien, Universite Jean Monnet, CNRS UMR 5516, 18 Rue Benoit Lauras, 42000, Saint-Etienne (France); Dipartimento di Fisica e Chimica, Universita di Palermo, Viale delle Scienze Parco d' Orleans II, Ed. 17, 90128 Palermo (Italy); Areva Centre Technique, Boulevard de l' Industrie, 71200, Le Creusot (France); Boukenter, A.; Marin, E.; Ouerdane, Y.; Girard, S. [Laboratoire Hubert Curien, Universite Jean Monnet, CNRS UMR 5516, 18 Rue Benoit Lauras, 42000, Saint-Etienne (France); Cannas, M. [Dipartimento di Fisica e Chimica, Universita di Palermo, Viale delle Scienze Parco d' Orleans II, Ed. 17, 90128 Palermo (Italy); Perisse, J. [Areva NP, 10 Rue Juliette Recamier, 69006, Lyon (France); Bauer, S. [Areva Centre Technique, Boulevard de l' Industrie, 71200, Le Creusot (France); Mace, J.R. [Areva NP, 1, Place Jean-Millier 92084, Paris-La Defense (France)

2015-07-01

overcome the issues identified for next generation of NPPs. Such integration will only be possible if the OFDR based systems are able to resist to the constraints associated with industrial environments, one of the most constraining being the presence of high level of radiations. In this work, we carry out a systematic study to highlight the OFDR interest and sensitivity to probe the optical samples at high irradiation dose levels. The responses of five optical fibers types, from radiation hardened to radiation sensitive ones, are investigated to explore the influence of both the material compositions and the γ-irradiation on the ODFR sensors. Using these samples, we should highlight the influence of the core dopant concentration on the observed radiation-induced changes as well as the difference observed when the cladding is either radiation resistant or radiation sensitive. Our samples were irradiated using a {sup 60}Co source facility reaching total doses varying from 1 MGy up to a maximum of 10 MGy. All the measurements are performed after diverse months from irradiation to study permanents effects induced from these high γ-rays doses. We'll present at the conference all the experimental results acquired and use them to estimate the potential of OFDR-based systems for operation in radiation environments. (authors)

A fax-machine amorphous silicon sensor for X-ray detection

Energy Technology Data Exchange (ETDEWEB)

Alberdi, J. [Association EURATOM/CIEMAT, Madrid (Spain); Barcala, J.M. [Association EURATOM/CIEMAT, Madrid (Spain); Chvatchkine, V. [Association EURATOM/CIEMAT, Madrid (Spain); Ioudine, I. [Association EURATOM/CIEMAT, Madrid (Spain); Molinero, A. [Association EURATOM/CIEMAT, Madrid (Spain); Navarrete, J.J. [Association EURATOM/CIEMAT, Madrid (Spain); Yuste, C. [Association EURATOM/CIEMAT, Madrid (Spain)

1996-10-01

Amorphous silicon detectors have been used, basically, as solar cells for energetics applications. As light detectors, linear sensors are used in fax and photocopier machines because they can be built with a large size, low price and have a high radiation hardness. Due to these performances, amorphous silicon detectors have been used as radiation detectors, and, presently, some groups are developing matrix amorphous silicon detectors with built-in electronics for medical X-ray applications. Our group has been working on the design and development of an X-ray image system based on a commercial fax linear amorphous silicon detector. The sensor scans the selected area and detects light produced by the X-ray in a scintillator placed on the sensor. Image-processing software produces a final image with better resolution and definition. (orig.).

Effective polycrystalline sensor of ultraviolet radiation

Directory of Open Access Journals (Sweden)

S.Yu. Pavelets

2017-10-01

Full Text Available Deposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for high stability of the parameters inherent to the p-Cu1.8S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component.

Recent progress of the RD50 Collaboration – Development of radiation tolerant tracking detectors

CERN Document Server

Moll, M

2014-01-01

The CERN RD50 Collaboration "Radiation hard semiconductor devices for high luminosity col- liders" is undertaking a massive R&D; programme across High Energy Physics (HEP) Experi- ments boundaries to develop silicon sensors with increased radiation tolerance. Highest priority is to provide concepts and prototypes of high performance silicon sensors for the High-Luminosity Large Hadron Collider (HL-LHC) Experiments at CERN and other future HEP Experiments op- erating in severe radiation environments. This paper gives an overview of the RD50 collaboration activities and describes some examples of recent developments. Emphasis is put on the charac- terization of microscopic radiation induced defects and their impact on the sensor performance, the evaluation and parametrization of electric fields inside irradiated sensors, progress in device modeling using TCAD tools, the use of p-type silicon as strip and pixel sensor material and finally the first steps towards the exploitation of impact ionization ( charge...

Silicon Photo-Multiplier Radiation Hardness Tests with a White Neutron Beam

International Nuclear Information System (INIS)

Montanari, A.; Tosi, N.; Pietropaolo, A.; Andreotti, M.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Luppi, E.; Cotta Ramusino, A.; Malaguti, R.; Santoro, V.; Tellarini, G.; Tomassetti, L.; De Donato, C.; Reali, E.

2013-06-01

We report radiation hardness tests performed, with a white neutron beam, at the Geel Electron Linear Accelerator in Belgium on silicon Photo-Multipliers. These are semiconductor photon detectors made of a square matrix of Geiger-Mode Avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to about 6.2 x 10 9 1-MeV-equivalent neutrons per cm 2 . (authors)

Development and Studies of Novel Microfabricated Radiation Hard Scintillation Detectors With High Spatial Resolution

CERN Document Server

Mapelli, A; Haguenauer, M; Jiguet, S; Renaud, P; Vico Triviño, N

2011-01-01

A new type of scintillation detector is being developed with standard microfabrication techniques. It consists of a dense array of scintillating waveguides obtained by coupling microfluidic channels filled with a liquid scintillator to photodetectors. Easy manipulation of liquid scintillators inside microfluidic devices allow their flushing, renewal, and exchange making the active medium intrinsically radiation hard. Prototype detectors have been fabricated by photostructuration of a radiation hard epoxy resin (SU-8) deposited on silicon wafers and coupled to a multi-anode photomultiplier tube (MAPMT) to read-out the scintillation light. They have been characterized by exciting the liquid scintillator in the 200 micrometers thick microchannels with electrons from a 90Sr yielding approximately 1 photoelectron per impinging Minimum Ionizing Particle (MIP). These promising results demonstrate the concept of microfluidic scintillating detection and are very encouraging for future developments.

Fabrication of 3D Silicon Sensors

Energy Technology Data Exchange (ETDEWEB)

Kok, A.; Hansen, T.E.; Hansen, T.A.; Lietaer, N.; Summanwar, A.; /SINTEF, Oslo; Kenney, C.; Hasi, J.; /SLAC; Da Via, C.; /Manchester U.; Parker, S.I.; /Hawaii U.

2012-06-06

Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

Prototype for a Radiation Hard Upgrade to the ATLAS ZDC

CERN Document Server

Phipps, Michael William; The ATLAS collaboration

2017-01-01

Increases in luminosity and collision energy at the LHC challenge the radiation hardness of detectors located along the beamline. This problem is especially acute for the Zero Degree Calorimeters (ZDCs) in ATLAS, which are exposed to around 10^{10} rad/yr, rendering the current version of the detector inviable during p+p running. To address this shortcoming and allow for important triggers and potential access to low-x physics, we designed a prototype detector that replaces quartz radiator material with a circulating, liquid hydrocarbon. It also features a dual-stage wavelength shifting scheme to transport light to silicon photo-multipliers, as well as both transverse and longitudinal segmentation to study the shower development in two dimensions. Design considerations, results from an SPS beam test and comparisons to GEANT simulation will be presented.

CMOS sensors for atmospheric imaging

Science.gov (United States)

Pratlong, Jérôme; Burt, David; Jerram, Paul; Mayer, Frédéric; Walker, Andrew; Simpson, Robert; Johnson, Steven; Hubbard, Wendy

2017-09-01

Recent European atmospheric imaging missions have seen a move towards the use of CMOS sensors for the visible and NIR parts of the spectrum. These applications have particular challenges that are completely different to those that have driven the development of commercial sensors for applications such as cell-phone or SLR cameras. This paper will cover the design and performance of general-purpose image sensors that are to be used in the MTG (Meteosat Third Generation) and MetImage satellites and the technology challenges that they have presented. We will discuss how CMOS imagers have been designed with 4T pixel sizes of up to 250 μm square achieving good charge transfer efficiency, or low lag, with signal levels up to 2M electrons and with high line rates. In both devices a low noise analogue read-out chain is used with correlated double sampling to suppress the readout noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. Radiation hardness is a particular challenge for CMOS detectors and both of these sensors have been designed to be fully radiation hard with high latch-up and single-event-upset tolerances, which is now silicon proven on MTG. We will also cover the impact of ionising radiation on these devices. Because with such large pixels the photodiodes have a large open area, front illumination technology is sufficient to meet the detection efficiency requirements but with thicker than standard epitaxial silicon to give improved IR response (note that this makes latch up protection even more important). However with narrow band illumination reflections from the front and back of the dielectric stack on the top of the sensor produce Fabry-Perot étalon effects, which have been minimised with process modifications. We will also cover the addition of precision narrow band filters inside the MTG package to provide a complete imaging subsystem. Control of reflected light is also critical in obtaining the

System tests of radiation hard optical links for the ATLAS semiconductor tracker

International Nuclear Information System (INIS)

Charlton, D.G.; Dowell, J.D.; Homer, R.J.; Jovanovic, P.; Kenyon, I.R.; Mahout, G.; Shaylor, H.R.; Wilson, J.A.; Rudge, A.; Fopma, J.; Mandic, I.; Nickerson, R.B.; Shield, P.; Wastie, R.; Weidberg, A.R.; Eek, L.-O.; Go, A.; Lund-Jensen, B.; Pearce, M.; Soederqvist, J.; Morrissey, M.; White, D.J.

2000-01-01

A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed

Experimental checking results of mathematical modeling of the radiation environment sensor based on diamond detectors

International Nuclear Information System (INIS)

Gladchenkov, E V; Kolyubin, V A; Nedosekin, P G; Zaharchenko, K V; Ibragimov, R F; Kadilin, V V; Tyurin, E M

2017-01-01

Were conducted a series of experiments, the purpose of which had to verify the mathematical model of the radiation environment sensor. Theoretical values of the beta particles count rate from 90 Sr - 90 Y source registered by radiation environment sensor was compared with the experimental one. Theoretical (calculated) count rate of beta particles was found with using the developed mathematical model of the radiation environment sensor. Deviation of the calculated values of the beta particle count rate does not exceed 10% from the experimental. (paper)

Uncooled Radiation Hard SiC Schottky VUV Detectors Capable of Single Photon Sensing, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize very large area, uncooled and radiative hard 4H-SiC VUV detectors capable of near single...

Development of fast and radiation hard Monolithic Active Pixel Sensors (MAPS) optimized for open charm meson detection with the CBM experiment

International Nuclear Information System (INIS)

Deveaux, M.

2008-03-01

The adequacy of CMOS MAPS (Monolithic Active Pixel Sensors) to provide high spatial resolution while submitted to high particle flux and radiation level is assessed in this work. A 55 Fe-source and minimum ionizing particle beams were used to study the performances of MAPS being irradiated either with neutrons and X-rays. As expected, ionizing radiation dominantly causes an increase of the leakage current of the pixels, which translates into increased shot noise. Non-ionizing radiation generates increases in terms of leakage currents but can reduce substantially the lifetime of the signal electrons in the pixel. The latter was found to cause a dramatic drop of the signal if the lifetime of the electrons shrinks below the time required for charge collection. The performances of irradiated detectors were studied as a function of the operation conditions, i.e. in terms of temperature and integration time of the pixel. It was demonstrated that running the detectors at low temperature ( 7 collisions per second, would shrink the lifetime of the detector to a few days. It was however demonstrated that a balanced configuration exists where, for lower beam interaction rate, enough D 0 -mesons can be collected and analyzed to investigate their production properties with a satisfactory sensitivity. (A.C.)

The influence of parotid gland sparing on radiation damages of dental hard tissues.

Science.gov (United States)

Hey, Jeremias; Seidel, Johannes; Schweyen, Ramona; Paelecke-Habermann, Yvonne; Vordermark, Dirk; Gernhardt, Christian; Kuhnt, Thomas

2013-07-01

The aim of the present study was to evaluate whether radiation damage on dental hard tissue depends on the mean irradiation dose the spared parotid gland is subjected to or on stimulated whole salivary flow rate. Between June 2002 and October 2008, 70 patients with neck and cancer curatively irradiated were included in this study. All patients underwent dental treatment referring to the guidelines and recommendations of the German Society of Dental, Oral and Craniomandibular Sciences prior, during, and after radiotherapy (RT). During the follow-up period of 24 months, damages on dental hard tissues were classified according to the RTOG/EORTC guidelines. The mean doses (D(mean)) during spared parotid gland RT were determined. Stimulated whole saliva secretion flow rates (SFR) were measured before RT and 1, 6, 12, 24 months after RT. Thirty patients showed no carious lesions (group A), 18 patients developed sporadic carious lesions (group B), and 22 patients developed general carious lesions (group C). Group A patients received a D mean of 21.2 ± 11.04 Gy. Group B patients received a D(mean) of 26.5 ± 11.59 Gy and group C patients received a D(mean) of 33.9 ± 9.93 Gy, respectively. The D(mean) of group A was significantly lower than the D(mean) of group C (p dental hard tissue correlates with increased mean irradiation doses as well as decreased salivary flow rates. Parotid gland sparing resulting in a dose below 20 Gy reduces radiation damage on dental hard tissues, and therefore, the dose may act as a predictor for the damage to be expected.

Hardness variability in commercial technologies

International Nuclear Information System (INIS)

Shaneyfelt, M.R.; Winokur, P.S.; Meisenheimer, T.L.; Sexton, F.W.; Roeske, S.B.; Knoll, M.G.

1994-01-01

The radiation hardness of commercial Floating Gate 256K E 2 PROMs from a single diffusion lot was observed to vary between 5 to 25 krad(Si) when irradiated at a low dose rate of 64 mrad(Si)/s. Additional variations in E 2 PROM hardness were found to depend on bias condition and failure mode (i.e., inability to read or write the memory), as well as the foundry at which the part was manufactured. This variability is related to system requirements, and it is shown that hardness level and variability affect the allowable mode of operation for E 2 PROMs in space applications. The radiation hardness of commercial 1-Mbit CMOS SRAMs from Micron, Hitachi, and Sony irradiated at 147 rad(Si)/s was approximately 12, 13, and 19 krad(Si), respectively. These failure levels appear to be related to increases in leakage current during irradiation. Hardness of SRAMs from each manufacturer varied by less than 20%, but differences between manufacturers are significant. The Qualified Manufacturer's List approach to radiation hardness assurance is suggested as a way to reduce variability and to improve the hardness level of commercial technologies

Development of cryogenic Si detectors by CERN RD39 Collaboration for ultra radiation hardness in SLHC environment

CERN Document Server

Li, Z; Anbinderis, P; Anbinderis, T; D’Ambrosio, N; de Boer, Wim; Borchi, E; Borer, K; Bruzzi, M; Buontempo, S; Chen, W; Cindro, V; Dierlamm, A; Eremin, V; Gaubas, E; Gorbatenko, V; Grigoriev, E; Hauler, F; Heijne, Erik H M; Heising, S; Hempel, O; Herzog, R; Härkönen, J; Ilyashenko, I; Janos, S; Jungermann, L; Kalesinskas, V; Kapturauskas, J; Laiho, R; Luukka, P; Mandic, I; De Masi, R; Menichelli, D; Mikuz, M; Militaru, O; Niinikosky, T O; O’Shea, V; Pagano, S; Paul, S; Piotrzkowski, K; Pretzl, K; Rato-Mendes, P; Rouby, X; Ruggiero, G; Smith, K; Sonderegger, P; Sousa, P; Tuominen, E; Tuovinen, E; Verbitskaya, E; Vaitkus, J; Wobst, E; Zavrtanik, M

2007-01-01

There are two key approaches in our CERN RD 39 Collaboration efforts to obtain ultra-radiation-hard Si detectors: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (150 K), and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the liquid nitrogen (LN2) temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures.

Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.

Science.gov (United States)

McMorrow, Julian J; Cress, Cory D; Gaviria Rojas, William A; Geier, Michael L; Marks, Tobin J; Hersam, Mark C

2017-03-28

Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.

Radiation hardness tests of SiPMs for the JLab Hall D Barrel calorimeter

International Nuclear Information System (INIS)

Qiang, Yi; Zorn, Carl; Barbosa, Fernando; Smith, Elton

2013-01-01

We report on the measurement of the neutron radiation hardness of silicon photomultipliers (SiPMs) manufactured by Hamamatsu Corporation in Japan and SensL in Ireland. Samples from both companies were irradiated by neutrons created by a 1 GeV electron beam hitting a thin lead target at Jefferson Lab Hall A. More tests regarding the temperature dependence of the neutron radiation damage and self-annealing were performed on Hamamatsu SiPMs using a calibrated Am–Be neutron source from the Jefferson Lab Radiation Control group. As the result of irradiation both dark current and dark rate increase linearly as a function of the 1 MeV equivalent neutron fluence and a temperature dependent self-annealing effect is observed.

Radiation hardness of WLS fibres for the ATLAS Tile Calorimeter

CERN Document Server

David, M; Maio, A

2007-01-01

In this document we present the data obtained in the irradiation in a Co-60 source of WLS fibers for the TileCal calorimeter. The optical, mechanical and radiation hardness properties of these fibers were developed in close contact with three producers: Bicron, Kuraray and Pol.Hi.Tech. The results on the degradation of the light output and attenuation length from five irradiations are presented. The fibers were irradiated with a total dose at least 3 times higher than the dose predicted for 10 years of operation of LHC at nominal luminosity.

Making transducers and sensors which lead to safer mining

Energy Technology Data Exchange (ETDEWEB)

Laird, R

1977-10-20

MRDE work on transducers and sensors is described. A device containing a radioactive source has already been developed for detecting the edge of a coal seam; on a device which senses the edge of the seam by measuring natural radiation form the neighbouring rocks. Hard bands or dirt in a seam can be located by measuring pick force or pick vibrations. Environmental monitors, sensors for measuring pressure and flow in methane drainage pipes, vibration monitors for fans, means of detecting cage position in pit shaft, and bunker control systems are also mentioned.

Development of a hard x-ray wavefront sensor for the EuXFEL

Science.gov (United States)

Berujon, Sebastien; Ziegler, Eric; Cojocaru, Ruxandra; Martin, Thierry

2017-05-01

We present developments on a hard X-ray wavefront sensing instrument for characterizing and monitoring the beam of the European X-ray Free Electron Lasers (EuXFEL). The pulsed nature of the intense X-ray beam delivered by this new class of facility gives rise to strong challenges for the optics and their diagnostic. In the frame of the EUCALL project Work Package 7, we are developing a sensor able to observe the beam in the X-ray energy range [8-40] keV without altering it. The sensor is based on the speckle tracking principle and employs two semi-transparent optics optimized such that their X-ray absorption is reduced. Furthermore, this instrument requires a scattering object with small random features placed in the beam and two cameras to record images of the beam at two different propagation distances. The analysis of the speckle pattern and its distortion from one image to the other allows absolute or differential wavefront recovery from pulse to pulse. Herein, we introduce the stakes and challenges of wavefront sensing at an XFEL source and explain the strategies adopted to fulfil the high requirements set by such a source.

Radiation-stimulated processes in transistor temperature sensors

International Nuclear Information System (INIS)

Pavlyk, B. V.; Grypa, A. S.

2016-01-01

The features of the radiation-stimulated changes in the I–V and C–V characteristics of the emitter–base junction in KT3117 transistors are considered. It is shown that an increase in the current through the emitter junction is observed at the initial stage of irradiation (at doses of D < 4000 Gy for the “passive” irradiation mode and D < 5200 Gy for the “active” mode), which is caused by the effect of radiation-stimulated ordering of the defect-containing structure of the p–n junction. It is also shown that the X-ray irradiation (D < 14000 Gy), the subsequent relaxation (96 h), and thermal annealing (2 h at 400 K) of the transistor temperature sensors under investigation result in an increase in their radiation resistance.

Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

Energy Technology Data Exchange (ETDEWEB)

Wei, Qingyu

2008-10-17

The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

International Nuclear Information System (INIS)

Wei, Qingyu

2008-01-01

The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

Low power consumption and high temperature durability for radiation sensor

International Nuclear Information System (INIS)

Matsumoto, Yoshinori; Ueno, Hiroto

2015-01-01

Low power consumption and high temperature operation are important in an environmental monitoring system. The power consumption of 3 mW is achieved for the radiation sensor using low voltage operational amplifier and comparator in the signal processing circuit. The leakage reverse current of photodiode causes the charge amplifier saturation over 50degC. High temperature durability was improved by optimizing the circuit configuration and the values of feedback resistance and capacitance in the charge amplifier. The pulse response of the radiation sensor was measured up to 55degC. The custom detection circuit was designed by 0.6 μm CMOS process at 5-V supply voltage. The operation temperature was improved up to 65degC. (author)

Performance of irradiated thin n-in-p planar pixel sensors for the ATLAS Inner Tracker upgrade

Science.gov (United States)

Savić, N.; Beyer, J.; Hiti, B.; Kramberger, G.; La Rosa, A.; Macchiolo, A.; Mandić, I.; Nisius, R.; Petek, M.

2017-12-01

The ATLAS collaboration will replace its tracking detector with new all silicon pixel and strip systems. This will allow to cope with the higher radiation and occupancy levels expected after the 5-fold increase in the luminosity of the LHC accelerator complex (HL-LHC). In the new tracking detector (ITk) pixel modules with increased granularity will implement to maintain the occupancy with a higher track density. In addition, both sensors and read-out chips composing the hybrid modules will be produced employing more radiation hard technologies with respect to the present pixel detector. Due to their outstanding performance in terms of radiation hardness, thin n-in-p sensors are promising candidates to instrument a section of the new pixel system. Recently produced and developed sensors of new designs will be presented. To test the sensors before interconnection to chips, a punch-through biasing structure was implemented. Its design was optimized to decrease the possible tracking efficiency losses observed. After irradiation, they were caused by the punch-through biasing structure. A sensor compatible with the ATLAS FE-I4 chip with a pixel size of 50×250 μm2, subdivided into smaller pixel implants of 30×30 μm2 size was designed to investigate the performance of the 50×50 μm2 pixel cells foreseen for the HL-LHC. Results on sensor performance of 50×250 and 50×50 μm2 pixel cells in terms of efficiency, charge collection and electric field properties are obtained with beam tests and the Transient Current Technique.

Study of n-on-p sensors breakdown in presence of dielectrics placed on top surface

CERN Document Server

Helling, Cole Michael; The ATLAS collaboration

2018-01-01

The ATLAS Upgrade strip module design has readout flex circuits glued directly on top of the sensors’ active area to facilitate the assembly process and minimize the radiation length. The process requires radiation-hard adhesives compatible with the sensor technology. We report on the studies of the breakdown behavior with miniature versions of the prototype sensors, where candidate adhesives were placed in several locations on top of the sensor, including the strip area, guard ring region, and sensor edge. Thermal cycling tends to attenuate the observed cases of breakdown with glue on top of the guard ring. Glue reaching the sensor edge results in low breakdown voltage if it also covers AC- or DC- pads or bias ring openings. Glue placement on top of guard ring region was performed on a large-format sensor, with generally similar results to the miniature sensor tests, except for a large glue deposition, which resulted in a permanent reduction of the breakdown voltage. Post-irradiation measurements were perf...

Angular Positioning Sensor for Space Mechanisms

Science.gov (United States)

Steiner, Nicolas; Chapuis, Dominique

2013-09-01

Angular position sensors are used on various rotating mechanisms such as solar array drive mechanisms, antenna pointing mechanisms, scientific instruments, motors or actuators.Now a days, potentiometers and encoders are mainly used for angular measurement purposes. Both of them have their own pros and cons.As alternative, Ruag Space Switzerland Nyon (RSSN) is developing and qualifying two innovative technologies of angular position sensors which offer easy implementation, medium to very high lifetime and high flexibility with regards to the output signal shape/type.The Brushed angular position sensor uses space qualified processes which are already flying on RSSN's sliprings for many years. A large variety of output signal shape can be implemented to fulfill customer requirements (digital, analog, customized, etc.).The contactless angular position sensor consists in a new radiation hard Application Specific Integrated Circuit (ASIC) based on the Hall effect and providing the angular position without complex processing algorithm.

Hydrogenated amorphous silicon radiation detectors: Material parameters; radiation hardness; charge collection

International Nuclear Information System (INIS)

Qureshi, S.

1991-01-01

Properties of hydrogenated amorphous silicon p-i-n diodes relevant to radiation detection applications were studied. The interest in using this material for radiation detection applications in physics and medicine was motivated by its high radiation hardness and the fact that it can be deposited over large area at relatively low cost. Thick, fully depleted a-Si:H diodes are required for sufficient energy deposition by a charged particle and better signal to noise ratio. A sizeable electric field is essential for charge collection in a -Si:H diodes. The large density of ionized defects that exist in the i layer when the diode is under DC bias causes the electric field to be uniform. Material parameters, namely carrier mobility and lifetime and the ionized defect density in thick a-Si:H p-i-n diodes were studied by the transient photoconductivity method. The increase in diode leakage current with reverse bias over the operating bias was consistent with the Poole-Frenkel effect, involving excitation of carriers from neutral defects. The diode noise over the operating voltage range was completely explained in terms of the shot noise component for CR-(RC) 4 (pseudo-Gaussian) shaping at 3 μs shaping time and the noise component at 0 V bias (delta and thermal noise) added in quadrature. Irradiation with 1 Mev neutrons produced no significant degradation in leakage current and noise at fluences exceeding 4 x 10 14 cm -2 . Irradiation with 1.4 Mev proton fluence of 1 x 10 14 cm -2 decreased carrier lifetime by a factor of ∼4. Degradation in leakage current and noise became significant at proton fluence of ∼10 13 cm -2

A Shack-Hartmann Sensor for Single-Shot Multi-Contrast Imaging with Hard X-rays

Directory of Open Access Journals (Sweden)

Tomy dos Santos Rolo

2018-05-01

Full Text Available An array of compound refractive X-ray lenses (CRL with 20 × 20 lenslets, a focal distance of 20cm and a visibility of 0.93 is presented. It can be used as a Shack-Hartmann sensor for hard X-rays (SHARX for wavefront sensing and permits for true single-shot multi-contrast imaging the dynamics of materials with a spatial resolution in the micrometer range, sensitivity on nanosized structures and temporal resolution on the microsecond scale. The object’s absorption and its induced wavefront shift can be assessed simultaneously together with information from diffraction channels. In contrast to the established Hartmann sensors the SHARX has an increased flux efficiency through focusing of the beam rather than blocking parts of it. We investigated the spatiotemporal behavior of a cavitation bubble induced by laser pulses. Furthermore, we validated the SHARX by measuring refraction angles of a single diamond CRL, where we obtained an angular resolution better than 4 μ rad.

X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jiaguo

2013-06-15

electron-accumulation layer at the Si-SiO{sub 2} interface is observed. Its width increases with dose and decreases with applied bias. voltage. The electron-accumulation layer is relevant for the change of the electrical properties of segmented sensors. Finally, according to the optimum parameters of silicon pixel sensors from TCAD simulations taking the damage-related parameters into account, a radiation-hard silicon pixel sensor for the AGIPD Project has been designed.

X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

International Nuclear Information System (INIS)

Zhang, Jiaguo

2013-06-01

-accumulation layer at the Si-SiO 2 interface is observed. Its width increases with dose and decreases with applied bias. voltage. The electron-accumulation layer is relevant for the change of the electrical properties of segmented sensors. Finally, according to the optimum parameters of silicon pixel sensors from TCAD simulations taking the damage-related parameters into account, a radiation-hard silicon pixel sensor for the AGIPD Project has been designed.

P-Type Silicon Strip Sensors for the Future CMS Tracker

CERN Document Server

The Tracker Group of the CMS Collaboration

2016-01-01

The upgrade to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at CMS. Based on these results, the collaboration has chosen to use n-in-p type strip and macro-pixel sensors and focus further investigations on the optimization of that sensor type. This paper describes the main measurement results and conclusions that motivated this decision.

Develop of BiI3 sensors for imagenology of radiations to ambient temperature

International Nuclear Information System (INIS)

Aguiar, I.

2008-01-01

The mastery refers to the obtention of images with radiations. The subject in study to be used as sensor of those radiations in the triodide of bismuth, since its properties makes it appropriate for the detections of ionizing and infrared radiation

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Rossini, Lorenzo; The ATLAS collaboration

2018-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High- Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for basic...

Applications of the energy differentiation type radiation line sensor to such as inspection for the plumbing corrosion

International Nuclear Information System (INIS)

Tomita, Yasuhiro; Shirayanagi, Yuji; Matsui, Shinjiro; Kamiya, Yosuke; Kobayashi, Akira

2015-01-01

The authors have engaged in development of the next-generation radiation detectors that can give information on energy such as X-rays and γ-rays, and commercialized an energy discrimination type radiation line sensor capable of discriminating the energy of photons using a CdTe radiation detector element. This paper introduces the structure and principles of this energy discrimination type radiation line sensor. As the basic application, it also introduces the material identification, energy discrimination type X-ray CT imaging, and the quantitative determination of iron plate thickness using X-ray. In addition, it introduces the radiation line sensor we have developed for inspecting the reduced amount of wall thickness of piping with insulation materials. This radiation line sensor for pipe thinning inspection combined with radiation sources (X-rays, γ-rays) and a transport system is capable of accurately and efficiently inspecting reduced wall thickness, while moving the censor on the covered pipe with heat insulating materials through remote control, without removing piping insulation materials and without stopping the use of piping. (A.O.)

Evaluation of the Detection Efficiency of LYSO Scintillator in the Fiber-Optic Radiation Sensor

Directory of Open Access Journals (Sweden)

Chan Hee Park

2014-01-01

Full Text Available The aim of this study was to develop and evaluate fiber-optic sensors for the remote detection of gamma rays in areas that are difficult to access, such as a spent fuel pool. The fiber-optic sensor consists of a light-generating probe, such as scintillators for radiation detection, plastic optical fibers, and light-measuring devices, such as PMT. The (Lu,Y2SiO5:Ce(LYSO:Ce scintillator was chosen as the light-generating probe. The (Lu,Y2SiO5:Ce(LYSO:Ce scintillator has higher scintillation efficiency than the others and transmits light well through an optical fiber because its refraction index is similar to the refractive index of the optical fiber. The fiber-optic radiation sensor using the (Lu,Y2SiO5:Ce(LYSO:Ce scintillator was evaluated in terms of the detection efficiency and reproducibility for examining its applicability as a radiation sensor.

Influence of variable tungsten valency on optical transmittance and radiation hardness of lead tungstate (PWO) scintillation crystals

CERN Document Server

Burachas, S; Makov, I; Saveliev, Yu; Ippolitov, M S; Man'ko, V; Nikulin, S P; Nyanin, A; Vasilev, A; Apanasenko, A; Tamulaitis, G

2003-01-01

A new approach to interpret the radiation hardness of PbWO//4 (PWO) scintillators is developed by revealing importance of the inclusions of tungsten oxides WO//3//-//x with variable valency. It is demonstrated that the influence of the ionizing radiation on PWO is, in many aspects, similar to the effect of the high-temperature annealing in oxygenless ambient. In both cases, a valency change of the tungsten oxides is initiated and results in induced absorption and, consequently, in crystal coloration. In the PWO crystals doped with L//2O//3 (L = Y, La, Gd), the radiation hardness and the optical properties are mainly affected by inclusions of W//1//-//yL//yO//3//- //x (0 less than x less than 0.3) instead of inclusions of WO//3//- //x prevailing in the undoped samples. It is demonstrated that the radiation-induced bleaching and the photochromic effect of PWO are caused by phase transitions in the inclusions of tungsten oxide. Thermodynamic conditions for the phase transitions are discussed and the optimal oxid...

2-D FEM Simulation of Propagation and Radiation of Leaky Lamb Wave in a Plate-Type Ultrasonic Waveguide Sensor

Energy Technology Data Exchange (ETDEWEB)

Park, Sang-Jin; Kim, Hoe-Woong; Joo, Young-Sang; Kim, Sung-Kyun; Kim, Jong-Bum [KAERI, Daejeon (Korea, Republic of)

2016-05-15

This paper introduces the 2-D FEM simulation of the propagation and radiation of the leaky Lamb wave in and from a plate-type ultrasonic waveguide sensor conducted for the radiation beam profile analysis. The FEM simulations are performed with three different excitation frequencies and the radiation beam profiles obtained from FEM simulations are compared with those obtained from corresponding experiments. This paper deals with the 2-D FEM simulation of the propagation and radiation of the leaky Lamb wave in and from a plate-type ultrasonic waveguide sensor conducted to analyze the radiation beam profiles. The radiation beam profile results obtained from the FEM simulation show good agreement with the ones obtained from the experiment. This result will be utilized to improve the performance of the developed waveguide sensor. The quality of the visualized image is mainly affected by beam profile characteristics of the leaky wave radiated from the waveguide sensor. However, the relationships between the radiation beam profile and many parameters of the waveguide sensor are not fully revealed yet. Therefore, further parametric studies are necessary to improve the performance of the sensor and the finite element method (FEM) is one of the most effective tools for the parametric study.

Test of radiation hardness of pcCVD detectors

Energy Technology Data Exchange (ETDEWEB)

Schlemme, Steffen [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Technische Universitaet Darmstadt (Germany); Enders, Joachim [Technische Universitaet Darmstadt (Germany); Figuera, P.; Salamone, S. [LNS-INFN Catania (Italy); Fruehauf, J.; Kis, Mladen; Kratz, A.; Kurz, N.; Loechner, S.; Nociforo, Chiara; Schirru, Fabio; Szczepanczyk, B.; Traeger, M.; Visinka, R. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Musumarra, A. [LNS-INFN Catania (Italy); University of Catania (Italy)

2016-07-01

The new in-flight separator Super-FRS is under construction at the Facility for Antiproton and Ion Research (FAIR, Darmstadt). Ion rates up to 3 x 10{sup 11} {sup 238}U/spill demand an adaption of detectors to a high radiation environment. A test experiment to investigate the radiation hardness of polycrystalline diamond detectors (pcCVD) was performed at the LNS-INFN in Catania using a {sup 12}C beam at 62 MeV/u and intensities of up to 1.5 pnA. The setup consisted of pcCVD strip detectors to measure the beam profile, a single crystal diamond detector to calibrate the ionisation chamber working in current mode as a beam intensity monitor and a pcCVD sample to be irradiated. The IC used was designed for FAIR and showed a stable counting rate allowing us to calibrate and perform beam intensity measurements with it. The total measured counts on the sample were 8.25 x 10{sup 11} counts/mm{sup 2} over a period of 60 hours. Digital waveforms of the pcCVD signals were taken with an oscilloscope and analysed. The results showed no change of the pcCVD signal properties during the entire irradiation.

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

International Nuclear Information System (INIS)

Barchuk, I.P.; Kilchitskaya, V.I.; Lysenko, V.S.

1997-01-01

In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMR-technique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique

Systems for detecting and recording hard corpuscular and electromagnetic radiations using a superconducting element

International Nuclear Information System (INIS)

Drukier, A.K.; Valette, Claude; Waysand, Georges.

1975-01-01

The invention relates to systems for detecting hard X ray or gamma radiations above 5 keV in energy, intended, for example, for gammagraphy by emission in the biological, anatomic and medical fields. It describes systems of the above type which directly give the image of a radiation distribution, that is to say without intermediate processing. Another purpose of the invention is to provide the devices with main memory measuring the radiation distribution, in other words systems that display the said data for as long as the operator deems necessary and that can be reset, that is to say returned to measuring conditions, immediately. The invention makes use of the properties of type I superconductors [fr

High-voltage pixel sensors for ATLAS upgrade

Energy Technology Data Exchange (ETDEWEB)

Perić, I., E-mail: ivan.peric@ziti.uni-heidelberg.de [Heidelberg University, Institute of Computer Engineering, Mannheim (Germany); Kreidl, C.; Fischer, P. [Heidelberg University, Institute of Computer Engineering, Mannheim (Germany); Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M. [CPPM, Marseille (France); Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B. [CERN, Geneve (Switzerland); Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A. [University of Geneve (Switzerland); and others

2014-11-21

The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

Effects of device scaling and geometry on MOS radiation hardness assurance

International Nuclear Information System (INIS)

Shaneyfelt, M.R.; Fleetwood, D.M.; Winokur, P.S.; Schwank, J.R.; Meisenheimer, T.L.

1993-01-01

In this work the authors investigate the effects of transistor scaling and geometry on radiation hardness. The total dose response is shown to depend strongly on transistor channel length. Specifically, transistors with shorter gate lengths tend to show more negative threshold-voltage shifts during irradiation than transistors with longer gate lengths. Similarly, transistors with longer gate lengths tend to show more positive threshold-voltage shifts during post-irradiation annealing than transistors with shorter gate lengths. These differences in radiation response, caused by differences in transistor size and geometry, will be important to factor into test-structure-to-IC correlations necessary to support cost-effective Qualified Manufacturers List (QML) hardness assurance. Transistors with minimum gate length (more negative ΔV th ) will have a larger effect on standby power supply current for an IC at high dose rates, such as in a weapon environment, where worst-case response is associated with negative threshold-voltage shifts during irradiation. On the other hand, transistors with maximum gate length (more positive ΔV th ) will have a larger effect on the timing parameters of an IC at low dose rates, such as in a space environment, where worst-case response is represented by positive threshold-voltage shifts after postirradiation anneal. The channel size and geometry effects they observe cannot be predicted from simple scaling models, but occur because of real differences in oxide-, interface-, and border-trap charge densities among devices of different sizes

Adaptive Multichannel Radiation Sensors for Plant Parameter Monitoring

Science.gov (United States)

Mollenhauer, Hannes; Remmler, Paul; Schuhmann, Gudrun; Lausch, Angela; Merbach, Ines; Assing, Martin; Mollenhauer, Olaf; Dietrich, Peter; Bumberger, Jan

2016-04-01

Nutrients such as nitrogen are playing a key role in the plant life cycle. They are much needed for chlorophyll production and other plant cell components. Therefore, the crop yield is strongly affected by plant nutrient status. Due to the spatial and temporal variability of soil characteristics or swaying agricultural inputs the plant development varies within a field. Thus, the determination of these fluctuations in the plant development is valuable for a detection of stress conditions and optimization of fertilisation due to its high environmental and economic impact. Plant parameters play crucial roles in plant growth estimation and prediction since they are used as indicators of plant performance. Especially indices derived out of remote sensing techniques provide quantitative information about agricultural crops instantaneously, and above all, non-destructively. Due to the specific absorption of certain plant pigments, a characteristic spectral signature can be seen in the visible and IR part of the electromagnetic spectrum, known as narrow-band peaks. In an analogous manner, the presence and concentration of different nutrients cause a characteristic spectral signature. To this end, an adequate remote sensing monitoring concept is needed, considering heterogeneity and dynamic of the plant population and economical aspects. This work will present the development and field investigations of an inexpensive multichannel radiation sensor to observe the incoming and reflected specific parts or rather distinct wavelengths of the solar light spectrum on the crop and facilitate the determination of different plant indices. Based on the selected sensor wavelengths, the sensing device allows the detection of specific parameters, e.g. plant vitality, chlorophyll content or nitrogen content. Besides the improvement of the sensor characteristic, the simple wavelength adaption, and the price-performance ratio, the achievement of appropriate energy efficiency as well as a

RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders

CERN Document Server

Balbuena, Juan Pablo; Campabadal, Francesca; Díez, Sergio; Fleta, Celeste; Lozano, Manuel; Pellegrini, Giulio; Rafí, Joan Marc; Ullán, Miguel; Creanza, Donato; De Palma, Mauro; Fedele, Francesca; Manna, Norman; Kierstead, Jim; Li, Zheng; Buda, Manuela; Lazanu, Sorina; Pintilie, Lucian; Pintilie, Ioana; Popa, Andreia-Ioana; Lazanu, Ionel; Collins, Paula; Fahrer, Manuel; Glaser, Maurice; Joram, Christian; Kaska, Katharina; La Rosa, Alessandro; Mekki, Julien; Moll, Michael; Pacifico, Nicola; Pernegger, Heinz; Goessling, Claus; Klingenberg, Reiner; Weber, Jens; Wunstorf, Renate; Roeder, Ralf; Stolze, Dieter; Uebersee, Hartmut; Cihangir, Selcuk; Kwan, Simon; Spiegel, Leonard; Tan, Ping; Bruzzi, Mara; Focardi, Ettore; Menichelli, David; Scaringella, Monica; Breindl, Michael; Eckert, Simon; Köhler, Michael; Kuehn, Susanne; Parzefall, Ulrich; Wiik, Liv; Bates, Richard; Blue, Andrew; Buttar, Craig; Doherty, Freddie; Eklund, Lars; Bates, Alison G; Haddad, Lina; Houston, Sarah; James, Grant; Mathieson, Keith; Melone, J; OShea, Val; Parkes, Chris; Pennicard, David; Buhmann, Peter; Eckstein, Doris; Fretwurst, Eckhart; Hönniger, Frank; Khomenkov, Vladimir; Klanner, Robert; Lindström, Gunnar; Pein, Uwe; Srivastava, Ajay; Härkönen, Jaakko; Lassila-Perini, Katri; Luukka, Panja; Mäenpää, Teppo; Tuominen, Eija; Tuovinen, Esa; Eremin, Vladimir; Ilyashenko, Igor; Ivanov, Alexandr; Kalinina, Evgenia; Lebedev, Alexander; Strokan, Nikita; Verbitskaya, Elena; Barcz, Adam; Brzozowski, Andrzej; Kaminski, Pawel; Kozlowski, Roman; Kozubal, Michal; Luczynski, Zygmunt; Pawlowski, Marius; Surma, Barbara; Zelazko, Jaroslaw; de Boer, Wim; Dierlamm, Alexander; Frey, Martin; Hartmann, Frank; Zhukov, Valery; Barabash, L; Dolgolenko, A; Groza, A; Karpenko, A; Khivrich, V; Lastovetsky, V; Litovchenko, P; Polivtsev, L; Campbell, Duncan; Chilingarov, Alexandre; Fox, Harald; Hughes, Gareth; Jones, Brian Keith; Sloan, Terence; Samadashvili, Nino; Tuuva, Tuure; Affolder, Anthony; Allport, Phillip; Bowcock, Themis; Casse, Gianluigi; Vossebeld, Joost; Cindro, Vladimir; Dolenc, Irena; Kramberger, Gregor; Mandic, Igor; Mikuž, Marko; Zavrtanik, Marko; Zontar, Dejan; Gil, Eduardo Cortina; Grégoire, Ghislain; Lemaitre, Vincent; Militaru, Otilia; Piotrzkowski, Krzysztof; Kazuchits, Nikolai; Makarenko, Leonid; Charron, Sébastien; Genest, Marie-Helene; Houdayer, Alain; Lebel, Celine; Leroy, Claude; Aleev, Andrey; Golubev, Alexander; Grigoriev, Eugene; Karpov, Aleksey; Martemianov, Alxander; Rogozhkin, Sergey; Zaluzhny, Alexandre; Andricek, Ladislav; Beimforde, Michael; Macchiolo, Anna; Moser, Hans-Günther; Nisius, Richard; Richter, Rainer; Gorelov, Igor; Hoeferkamp, Martin; Metcalfe, Jessica; Seidel, Sally; Toms, Konstantin; Hartjes, Fred; Koffeman, Els; van der Graaf, Harry; Visschers, Jan; Kuznetsov, Andrej; Sundnes Løvlie, Lars; Monakhov, Edouard; Svensson, Bengt G; Bisello, Dario; Candelori, Andrea; Litovchenko, Alexei; Pantano, Devis; Rando, Riccardo; Bilei, Gian Mario; Passeri, Daniele; Petasecca, Marco; Pignatel, Giorgio Umberto; Bernardini, Jacopo; Borrello, Laura; Dutta, Suchandra; Fiori, Francesco; Messineo, Alberto; Bohm, Jan; Mikestikova, Marcela; Popule, Jiri; Sicho, Petr; Tomasek, Michal; Vrba, Vaclav; Broz, Jan; Dolezal, Zdenek; Kodys, Peter; Tsvetkov, Alexej; Wilhelm, Ivan; Chren, Dominik; Horazdovsky, Tomas; Kohout, Zdenek; Pospisil, Stanislav; Solar, Michael; Sopko, Vít; Sopko, Bruno; Uher, Josef; Horisberger, Roland; Radicci, Valeria; Rohe, Tilman; Bolla, Gino; Bortoletto, Daniela; Giolo, Kim; Miyamoto, Jun; Rott, Carsten; Roy, Amitava; Shipsey, Ian; Son, SeungHee; Demina, Regina; Korjenevski, Sergey; Grillo, Alexander; Sadrozinski, Hartmut; Schumm, Bruce; Seiden, Abraham; Spence, Ned; Hansen, Thor-Erik; Artuso, Marina; Borgia, Alessandra; Lefeuvre, Gwenaelle; Guskov, J; Marunko, Sergey; Ruzin, Arie; Tylchin, Tamir; Boscardin, Maurizio; Dalla Betta, Gian - Franco; Gregori, Paolo; Piemonte, Claudio; Ronchin, Sabina; Zen, Mario; Zorzi, Nicola; Garcia, Carmen; Lacasta, Carlos; Marco, Ricardo; Marti i Garcia, Salvador; Minano, Mercedes; Soldevila-Serrano, Urmila; Gaubas, Eugenijus; Kadys, Arunas; Kazukauskas, Vaidotas; Sakalauskas, Stanislavas; Storasta, Jurgis; Vidmantis Vaitkus, Juozas; CERN. Geneva. The LHC experiments Committee; LHCC

2010-01-01

The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration.

Measurement of radiation induced transients in hybrid microcircuits by magnetic thin film sensor/recorders

International Nuclear Information System (INIS)

Hsieh, E.J.; Vindelov, K.E.; Brown, T.G.; Miller, D.E.

1976-01-01

Magnetic thin film transient current sensor/recorders were modified to make two types of nuclear test measurements, transient currents in hybrid microcircuits and internal electromagnetic pulse (IEMP) fields. The measurements were made possible by the invention of split-domain sensor/recorders which can measure bilateral currents and can be reset and readout on location. The sensor/recorders were used in two underground nuclear tests and numerous calibration tests in radiation-simulation machines. The data showed that the nuclear environment had negligible effect on the sensor/recorder's operation and the recorded informations on the sensor/recorders were the signals intended to be monitored. Also, the experimental data agreed with the theoretical analysis in controlled experiments. The data were examined first by on location readout with a magnetic tape viewer and later by Kerr magneto-optic readout in the laboratory. To translate the data into current readings, we reconstructed facsimile data (on each of the sensor/recorders) in the laboratory by current pulses with the same pulse width as the radiation event. An additional check on the accuracy of the data was made by using both the sensor/recorder and the conventional pickup-oscilloscope-camera technique to monitor the same current lead in a simulated radiation environment. Over five runs were made, and the agreement among the two measurement methods was within 25%. The data collectively implied that the measurements were reliable and dependable

An annealing study of charge collection efficiency on Float-Zone p-on-n ministrip sensors irradiated with 24 GeV/c protons and 20 MeV neutrons

International Nuclear Information System (INIS)

Pacifico, N.; Dolenc-Kittelmann, I.; Gabrysch, M.; Moll, M.; Lucas, C.

2015-01-01

Float-Zone n-bulk p-readout silicon sensors are currently operated in the tracking layers of many High Energy Physics experiments, where they are exposed to moderate to high fluences of hadrons. Though n-readout sensors, either with p or n bulk, are available and are offering an improved radiation hardness, p-on-n sensors are still widely used and are e.g. installed in the present ATLAS and CMS experiments at CERN. Their radiation hardness and long-term performance are therefore of high interest to the detector community. We present here a study performed on these sensors after irradiation with 24 GeV/c protons and 20 MeV neutrons to fluences ranging from 1⋅10 14 to 1⋅10 15 n eq /cm 2 . The sensors were then investigated for charge collection efficiency after different isothermal annealing steps in order to understand the performance evolution of the sensor with annealing time. Additional measurements were performed for the highest neutron fluence by means of the Edge-TCT technique, to assess the electric field configuration within the sensor. The irradiation and the annealing scenarios were chosen to represent the radiation damage scenario over the expected lifetime of the LHC detectors (and even further) and to assess the effect of unplanned annealing due to potentially longer warm shutdowns or cooling problems

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Rossini, Lorenzo; The ATLAS collaboration

2018-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm^2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for b...

Performance of Hall sensor-based devices for magnetic field diagnosis at fusion reactors

Czech Academy of Sciences Publication Activity Database

Bolshakova, I.; Ďuran, Ivan; Holyaka, R.; Hristoforou, E.; Marusenkov, A.

2007-01-01

Roč. 5, č. 1 (2007), s. 283-288 ISSN 1546-198X R&D Projects: GA AV ČR KJB100430504 Institutional research plan: CEZ:AV0Z20430508 Keywords : Galvanomagnetic * Sensor * Fusion Reactor * Magnetic Diagnostics * Radiation Hardness Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.587, year: 2007

Radiation-hard/high-speed parallel optical links

International Nuclear Information System (INIS)

Gan, K.K.; Buchholz, P.; Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S.; Wiese, A.; Ziolkowski, M.

2014-01-01

We have designed an ASIC for use in a parallel optical engine for a new layer of the ATLAS pixel detector in the initial phase of the LHC luminosity upgrade. The ASIC is a 12-channel VCSEL (Vertical Cavity Surface Emitting Laser) array driver capable of operating up to 5 Gb/s per channel. The ASIC is designed using a 130 nm CMOS process to enhance the radiation-hardness. A scheme for redundancy has also been implemented to allow bypassing of a broken VCSEL. The ASIC also contains a power-on reset circuit that sets the ASIC to a default configuration with no signal steering. In addition, the bias and modulation currents of the individual channels are programmable. The performance of the first prototype ASIC up to 5 Gb/s is satisfactory. Furthermore, we are able to program the bias and modulation currents and to bypass a broken VCSEL channel. We are currently upgrading our design to allow operation at 10 Gb/s per channel yielding an aggregated bandwidth of 120 Gb/s. Some preliminary results of the design will be presented

Planar sensors for the upgrade of the CMS pixel detector

International Nuclear Information System (INIS)

Rohe, T.; Bean, A.; Radicci, V.; Sibille, J.

2011-01-01

A replacement of the present CMS pixel detector with a better performing light weight four-layer system is foreseen in 2016. In the lifetime of this new system the LHC will reach and exceed its nominal luminosity of 10 34 cm -2 s -1 . Therefore the radiation hardness of all parts of the pixel system has to be reviewed. For the construction of the much larger four-layer pixel system, the replacement of the present double sided sensors by much cheaper single sided ones is considered. However, the construction of pixel modules with such sensors is challenging due to the small geometrical distance of the sensor high voltage and the ground of the readout electronics. This small distance limits the sensor bias to about 500 V in the tested samples.

\\title{Development of Radiation Damage Models for Irradiated Silicon Sensors Using TCAD Tools}

CERN Document Server

Bhardwaj, Ashutosh; Lalwani, Kavita; Ranjan, Kirti; Printz, Martin; Ranjeet, Ranjeet; Eber, Robert; Eichhorn, Thomas; Peltola, Timo Hannu Tapani

2014-01-01

Abstract. During the high luminosity upgrade of the LHC (HL-LHC) the CMS tracking system will face a more intense radiation environment than the present system was designed for. In order to design radiation tolerant silicon sensors for the future CMS tracker upgrade it is fundamental to complement the measurement with device simulation. This will help in both the understanding of the device performance and in the optimization of the design parameters. One of the important ingredients of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this paper we will discuss the development of a radiation damage model by using commercial TCAD packages (Silvaco and Synopsys), which successfully reproduce the recent measurements like leakage current, depletion voltage, interstrip capacitance and interstrip resistance, and provides an insight into the performance of irradiated silicon strip sensors.

Design of Zigbee-Based Wireless Sensor suitable for Radiation Detection and Monitoring

International Nuclear Information System (INIS)

Madian, A.A.

2012-01-01

This paper presents a design for a wireless sensor nuclear radiation monitoring and detection based on Zigbee. The system consists of transmitter and receiver modules. The wireless sensor installed at transmitter whiles the receiver processing data. The communication between Tx and Rx done through Zigbee module using the protocol of CSMA/CA. The Zigbee has the advantages of reliable, power-efficient, and low-latency communications between low-cost Tx/Rx.The wireless sensor implementation can easily be deployed to discover unusual or abnormal radioactivity. The sensors are convenient to be installed indoors or outdoors, as well as to be mounted on mobile equipment's. All wireless nuclear detection sensors are designed using micro controller and other integrated systems

RD50 Status Report 2009/2010 - Radiation hard semiconductor devices for very high luminosity colliders

CERN Document Server

Moll, Michael

2012-01-01

The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements for the upgrade of the LHC detectors. This document reports on the status of research and main results obtained in the years 2009 and 2010.

ALPIDE, the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

Science.gov (United States)

Mager, M.; ALICE Collaboration

2016-07-01

A new 10 m2 inner tracking system based on seven concentric layers of Monolithic Active Pixel Sensors will be installed in the ALICE experiment during the second long shutdown of LHC in 2019-2020. The monolithic pixel sensors will be fabricated in the 180 nm CMOS Imaging Sensor process of TowerJazz. The ALPIDE design takes full advantage of a particular process feature, the deep p-well, which allows for full CMOS circuitry within the pixel matrix, while at the same time retaining the full charge collection efficiency. Together with the small feature size and the availability of six metal layers, this allowed a continuously active low-power front-end to be placed into each pixel and an in-matrix sparsification circuit to be used that sends only the addresses of hit pixels to the periphery. This approach led to a power consumption of less than 40 mWcm-2, a spatial resolution of around 5 μm, a peaking time of around 2 μs, while being radiation hard to some 1013 1 MeVneq /cm2, fulfilling or exceeding the ALICE requirements. Over the last years of R & D, several prototype circuits have been used to verify radiation hardness, and to optimize pixel geometry and in-pixel front-end circuitry. The positive results led to a submission of full-scale (3 cm×1.5 cm) sensor prototypes in 2014. They are being characterized in a comprehensive campaign that also involves several irradiation and beam tests. A summary of the results obtained and prospects towards the final sensor to instrument the ALICE Inner Tracking System are given.

The chemistry of two-component fluoride crystalline optical media for heavy, fast, radiation hard scintillators

International Nuclear Information System (INIS)

Sobolev, B.P.; Krivandina, E.A.; Fedorov, P.P.; Vasilchenko, V.G.

1994-01-01

Prospects for preparation of two-component dense optical materials for scintillators are shown, using data on phase diagrams of about 300 MF m - RF n (m, n ≤ 4) type systems, formed by metal fluorides. Primary characteristics (decay time and light output of luminescence, radiation hardness, etc.) of some multicomponent crystals are reported

Study of n-on-p sensors breakdown in presence of dielectrics placed on top surface

CERN Document Server

Affolder, Tony; The ATLAS collaboration

2018-01-01

The ATLAS Experiment at LHC will have several upgrade projects for High Luminosity LHC operations. Its tracking system will be replaced to cope with the higher interaction rate and radiation levels. The Strip portion of the tracker will be significantly expanded in radius and instrumented area to control the occupancy and momentum resolution. The strip modules are based on large-area n-on-p sensors with short strips, designed to work with the larger particle fluxes and radiation hardness requirements. The strip module design has readout flex circuit glued directly on top of the sensors’ active area to facilitate the assembly process and minimize the radiation length. Adhesive spread outward to the guard ring (GR) region is typically avoided to control the sensor breakdown. However, due to the large number of modules to be constructed, on the order of 20000, such occasions may in principle happen, depending on the process precision control. Therefore, the adhesive influence on the sensor breakdown and the br...

A mixed analog-digital radiation hard technology for high energy physics electronics DMILL (Durci Mixte sur Isolant Logico-Linéaire)

CERN Document Server

Beuville, E; Borgeaud, P; Fourches, N T; Rouger, M; Blanc, J P; Bruel, M; Delevoye-Orsier, E; Gautier, J; Du Port de Pontcharra, J; Truche, R; Dupont-Nivet, E; Flament, O; Leray, J L; Martin, J L; Montaron, J; Borel, G; Brice, J M; Chatagnon, P; Terrier, C; Aubert, Jean-Jacques; Delpierre, P A; Habrard, M C; Potheau, R; CERN. Geneva. Detector Research and Development Committee

1992-01-01

The high radiation level expected in the inner regions of the high luminosity LHC detectors (gamma and neutron) will require radiation hardened electronics. A consortium between the CEA (Commissariat a l'Energie Atomique) and Thomson TMS (Thomson Composants Militaires et Spatiaux) has been created to push for the development and the industrialization of a nascent technology which looks particularly adapted to the needs of HEP electronics. This technology, currently under development at the LETI(CEA), uses a SIMOX substrate with an epitaxial silicon film. It includes CMOS, JFETs and vertical bipolar transistors with a potential multi-megarad hardness. The CMOS and bipolar transistors constitute a rad-hard BiCMOS which will be useful to design analog and digital high-speed architectures. JFETs, which have intrinsically high hardness behaviour and low noise performances even at low temperature will enable very rad-hard, low noise front end electronics to be designed. Present results, together with the improvemen...

Radiation hardness of silicon detectors manufactured on wafers from various sources

International Nuclear Information System (INIS)

Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

1997-01-01

Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

Rad Hard Active Media For Calorimeters

CERN Document Server

Norbeck, E; Möller, A; Onel, Y

2006-01-01

Zero-degree calorimeters have limited space and extreme levels of radiation. A simple, low cost, radiation hard design uses tungstenmetal as the absorber and a suitable liquid as the ˇCerenkov radiator. In other applications a PPAC (Parallel Plate Avalanche Counter) operatingwith a suitable atmosphericpressure gas is an attractive active material for a calorimeter. It can be made radiation hard and has sufficient gain in the gas that no electronic components are needed near the detector. It works well even with the highest concentration of shower particles. For this pressure range, R134A (used in auto air conditioners) has many desirable features.

Investigation of the electric field in irradiated diamond sensors

Energy Technology Data Exchange (ETDEWEB)

Kassel, Florian; Barvich, Tobias; Boer, Wim de; Dierlamm, Alexander; Eber, Robert; Nuernberg, Andreas; Steck, Pia [Institut fuer Experimentelle Kernphysik (IEKP), Karlsruher Institut fuer Technologie (KIT) (Germany); Dabrowski, Anne; Guthoff, Moritz [CERN (Switzerland)

2015-07-01

The Beam Condition Monitoring Leakage (BCML) system is a beam monitoring device in the CMS experiment at the LHC. As detectors 32 poly-crystalline CVD diamond sensors are positioned in a ring around the beam pipe at a distance of +/-1.8 m and +/-14.4 m from the interaction point. The radiation hardness of the diamond sensors in terms of measured signal during operation was significantly lower than expected based on laboratory measurements. At high particle rates, like they occur during the operation of the LHC, charge carriers can be trapped in defects created by radiation. This space charge is expected to modify the electrical field in the sensor bulk and hence to reduce the charge collection efficiency. This modified electrical field has been indirectly measured in the laboratory using the Transient Current Technique (TCT) method in irradiated single crystal CVD diamond. This rate dependent effect was simulated with the software 'SILVACO ATLAS' and the obtained electrical field was used to calculate a TCT measurement pulse. The results of the TCT measurements will be compared to the simulation.

An enhanced ionising radiation monitoring and detecting technique in radiotherapy units of hospitals using wireless sensor networks

International Nuclear Information System (INIS)

Ali, Peter

2017-01-01

In this paper, a solution of ionising radiation monitoring based on the concept of Wireless Sensor Network (WSN), is presented. Radiation dose rate measured by the sensor node is sent to the monitoring station through ZigBee wireless network operated on 2.4 GHz unlicensed Industrial Scientific Medical (ISM) band. The system is calibrated for use for ionizing radiation dose rate range of between amount of ionising radiation observed in radiotherapy unit of a hospital and 1.02 mSv/h. Power consumption of the sensor node is kept low by operating the node ZigBee radio with low duty cycle: i.e. by keeping the radio awake only during data transmission/reception. Two ATmega8 microcontrollers, one each for sensor node and the monitoring station, are programmed to perform interfacing, data processing, and control functions. The system range of coverage is 124m for outdoor (line of site) deployment and 56.8m for indoor application where 5 brick walls separated the sensor node and the monitoring station. Range of coverage of the system is extendable via the use of ZigBee router (s)

Performance ratio hardness characteristics polystyrene-metal composite materials

International Nuclear Information System (INIS)

Klepikov, V.F.; Prokhorenko, E.M.; Lytvynenko, V.V.; Zakharchenko, A.A.; Hazhmuradov, M.A.

2015-01-01

The methods of measuring the hardness of layered polystyrene-metallic composite materials. It is proposed to use powder-like tungsten and powder-like steel as radiation-protective layer. A measurement of the hardness of composites of different composition, and given its dependence on the particle size and their form. The possibility of increasing the hardness of the composites reinforced with metallic additives. Radiation-protective characteristics were calculated for the studied species of composite materials. Influence of the quantitative composition of the metal components is studied on the change of the absorbed dose of gamma radiation

Probing and irradiation tests of ALICE pixel chip wafers and sensors

CERN Document Server

Cinausero, M; Antinori, F; Chochula, P; Dinapoli, R; Dima, R; Fabris, D; Galet, G; Lunardon, M; Manea, C; Marchini, S; Martini, S; Moretto, S; Pepato, Adriano; Prete, G; Riedler, P; Scarlassara, F; Segato, G F; Soramel, F; Stefanini, G; Turrisi, R; Vannucci, L; Viesti, G

2004-01-01

In the framework of the ALICE Silicon Pixel Detector (SPD) project a system dedicated to the tests of the ALICE1LHCb chip wafers has been assembled and is now in use for the selection of pixel chips to be bump-bonded to sensor ladders. In parallel, radiation hardness tests of the SPD silicon sensors have been carried out using the 27 MeV proton beam delivered by the XTU TANDEM accelerator at the SIRAD facility in LNL. In this paper we describe the wafer probing and irradiation set-ups and we report the obtained results. (6 refs).

Uncooled Radiation Hard Large Area SiC X-ray and EUV Detectors and 2D Arrays, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize large area, uncooled and radiative hard 4H-SiC EUV ? soft X-ray detectors capable of ultra...

Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

CERN Document Server

Wang, T.

2017-01-01

The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.

Silicon photo-multiplier radiation hardness tests with a beam controlled neutron source

International Nuclear Information System (INIS)

Angelone, M.; Pillon, M.; Faccini, R.; Pinci, D.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Cotta Ramusino, A.; Malaguti, R.; Pozzati, M.

2010-01-01

Radiation hardness tests were performed at the Frascati Neutron Generator on silicon Photo-Multipliers that were made of semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated, integrating up to 7x10 10 1-MeV-equivalent neutrons per cm 2 . Detector performance was recorded during the neutron irradiation, and a gradual deterioration of their properties began after an integrated fluence of the order of 10 8 1-MeV-equivalent neutrons per cm 2 was reached.

Performance of active edge pixel sensors

Science.gov (United States)

Bomben, M.; Ducourthial, A.; Bagolini, A.; Boscardin, M.; Bosisio, L.; Calderini, G.; D'Eramo, L.; Giacomini, G.; Marchiori, G.; Zorzi, N.; Rummler, A.; Weingarten, J.

2017-05-01

To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin planar n-on-p pixel sensors with active edge have been designed and produced by LPNHE and FBK foundry. Two detector module prototypes, consisting of pixel sensors connected to FE-I4B readout chips, have been tested with beams at CERN and DESY. In this paper the performance of these modules are reported. In particular the lateral extension of the detection volume, beyond the pixel region, is investigated and the results show high hit efficiency also at the detector edge, even in presence of guard rings.

Final report for EMP instrumentation project DNA IACRO 75-815: magnetic thin film sensors

International Nuclear Information System (INIS)

Hsieh, E.J.; Miller, D.E.; Vindelov, K.E.; Brown, T.G.

1975-01-01

The magnetic thin film current sensor/recorder is a passive device which responds to the peak current and pulse shape of a transient event. The transient current information becomes a permanent record on the film. The thin film device is small, low mass and reusable. It has been proven to be fast (less than 1/2 nanosecond response), radiation hard and applicable to peak current measurement of both CW and pulsed signals. The sensors were initially developed at LLL for pulse-energy measurement on exploding wires. Later the Defense Nuclear Agency sponsored the present project to develop the magnetic thin film devices as EMP diagnostic tools. The Air Force Weapons Lab supported the work to test the field capabilities of the thin film devices at ARES test facility, Kirtland AFB. Sandia Lab is now using a new version of the thin film sensors to monitor the transient current induced by intense radiation in their hybrid microcircuits. Also, a field test has been planned with Naval Electronics Laboratory Center where the thin film sensors are to be used to measure peak CW current caused by rf radiation. Research results are summarized

Enhancement of ZnO-rGO nanocomposite thin films by gamma radiation for E. coli sensor

Energy Technology Data Exchange (ETDEWEB)

Noor Azmy, Noor Azwen [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, 43650, UKM, Bangi, Selangor (Malaysia); Bakar, Ahmad Ashrif A., E-mail: ashrif@ukm.edu.my [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, 43650, UKM, Bangi, Selangor (Malaysia); Arsad, Norhana [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, 43650, UKM, Bangi, Selangor (Malaysia); Idris, Sarada [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, 43650, UKM, Bangi, Selangor (Malaysia); Radiation Facilities Division, Block 42, Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor (Malaysia); Mohmad, Abdul Rahman [MEMS-NEMS and Nanoelectronics, Institute of Microengineering and Nanoelectronics (IMEN), 43650 UKM, Bangi, Selangor (Malaysia); Abdul Hamid, Aidil [School of Biosciences and Biotechnology, Faculty of Science and Technology, 43650 UKM, Bangi, Selangor (Malaysia)

2017-01-15

Highlights: • ZnO-rGO nanocomposite thin films by gamma radiation for E. coli sensor were fabricated for the first time. • Exposed to gamma radiation leads to the change the microstructure of the films. • The optical behaviors of thin films were found to be gamma dose dependent. • The sensors had a linear response with GO concentration. • The sensors exhibited enhanced sensitivity at higher gamma radiation. - Abstract: The fabricated E. coli sensor of ZnO-rGO nanocomposite thin films by gamma radiation was investigated. Nanocomposite films were prepared via sol–gel method and were irradiated at 10 kGy at room temperature. The surface characteristic of as-prepared samples have been characterized by x-ray diffraction (XRD), fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The proposed structure shows that exposed gamma radiation may change the microstructure of the films occurs as a result of their flexible structure. Uv–vis spectra of nanocomposite were studied to investigate the optical behavior of ZnO-rGO films and the optical energy band gap and Urbach energy were found to be gamma dose dependent. The sensing properties were identified by measuring the changes of conductivity of film using I-V measurement. Upon exposure to E. coli, the radiated ZnO-rGO films (1.00 vol% GO) exhibited higher sensitivity, as much as 4.62 × 10{sup −3}, than un-radiated films, 1.04 × 10{sup −3}. This enhancement of the I-V response was attributed to a positive influence of the gamma radiation in these films. The results prove that our ZnO-rGO nanocomposites thin films by gamma radiation demonstrate a strong performance for the detection of microbiological organisms in water.

Design optimization of pixel sensors using device simulations for the phase-II CMS tracker upgrade

Science.gov (United States)

Jain, G.; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichorn, T.; Fernandez, M.; Lalwani, K.; Messineo, A.; Palomo, F. R.; Peltola, T.; Printz, M.; Ranjan, K.; Villa, I.; Hidalgo, S.; CMS Collaboration

2016-07-01

In order to address the problems caused by the harsh radiation environment during the high luminosity phase of the LHC (HL-LHC), all silicon tracking detectors (pixels and strips) in the CMS experiment will undergo an upgrade. And so to develop radiation hard pixel sensors, simulations have been performed using the 2D TCAD device simulator, SILVACO, to obtain design parameters. The effect of various design parameters like pixel size, pixel depth, implant width, metal overhang, p-stop concentration, p-stop depth and bulk doping density on the leakage current and critical electric field are studied for both non-irradiated as well as irradiated pixel sensors. These 2D simulation results of planar pixels are useful for providing insight into the behaviour of non-irradiated and irradiated silicon pixel sensors and further work on 3D simulation is underway.

Design optimization of pixel sensors using device simulations for the phase-II CMS tracker upgrade

International Nuclear Information System (INIS)

Jain, G.; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichorn, T.; Fernandez, M.; Lalwani, K.; Messineo, A.; Palomo, F.R.; Peltola, T.; Printz, M.; Ranjan, K.; Villa, I.; Hidalgo, S.

2016-01-01

In order to address the problems caused by the harsh radiation environment during the high luminosity phase of the LHC (HL-LHC), all silicon tracking detectors (pixels and strips) in the CMS experiment will undergo an upgrade. And so to develop radiation hard pixel sensors, simulations have been performed using the 2D TCAD device simulator, SILVACO, to obtain design parameters. The effect of various design parameters like pixel size, pixel depth, implant width, metal overhang, p-stop concentration, p-stop depth and bulk doping density on the leakage current and critical electric field are studied for both non-irradiated as well as irradiated pixel sensors. These 2D simulation results of planar pixels are useful for providing insight into the behaviour of non-irradiated and irradiated silicon pixel sensors and further work on 3D simulation is underway.

Design optimization of pixel sensors using device simulations for the phase-II CMS tracker upgrade

Energy Technology Data Exchange (ETDEWEB)

Jain, G., E-mail: geetikajain.hep@gmail.com [CDRST, Department of Physics & Astrophysics, University of Delhi, Delhi (India); Bhardwaj, A.; Dalal, R. [CDRST, Department of Physics & Astrophysics, University of Delhi, Delhi (India); Eber, R. [Institute fur Experimentelle Kernphysik (Germany); Eichorn, T. [Deutsches Elektronen Synchrotron (Germany); Fernandez, M. [Instituto de Fisica de Cantabria (Spain); Lalwani, K. [CDRST, Department of Physics & Astrophysics, University of Delhi, Delhi (India); Messineo, A. [Universita di Pisa & INFN sez. di Pisa (Italy); Palomo, F.R. [Escuela Superior de Ingenieros, Universidad de Sevilla (Spain); Peltola, T. [Helsinki Institute of Physics (Finland); Printz, M. [Institute fur Experimentelle Kernphysik (Germany); Ranjan, K. [CDRST, Department of Physics & Astrophysics, University of Delhi, Delhi (India); Villa, I. [Instituto de Fisica de Cantabria (Spain); Hidalgo, S. [Instituto de Microelectronica de Barcelona, Centro Nacional de Microelectronica (Spain)

2016-07-11

In order to address the problems caused by the harsh radiation environment during the high luminosity phase of the LHC (HL-LHC), all silicon tracking detectors (pixels and strips) in the CMS experiment will undergo an upgrade. And so to develop radiation hard pixel sensors, simulations have been performed using the 2D TCAD device simulator, SILVACO, to obtain design parameters. The effect of various design parameters like pixel size, pixel depth, implant width, metal overhang, p-stop concentration, p-stop depth and bulk doping density on the leakage current and critical electric field are studied for both non-irradiated as well as irradiated pixel sensors. These 2D simulation results of planar pixels are useful for providing insight into the behaviour of non-irradiated and irradiated silicon pixel sensors and further work on 3D simulation is underway.

Hard X-ray studies on the Castor tokamak

International Nuclear Information System (INIS)

Mlynar, J.

1990-04-01

The electron runaway processes in tokamaks are discussed with regard to hard X radiation measurements. The origin and confinement of runaway electrons, their bremsstrahlung spectra and the influence of lower hybrid current drive on the distribution of high-energy electrons are analyzed for the case of the Castor tokamak. The hard X-ray spectrometer designed for the Castor tokamak is also described and preliminary qualitative results of hard X-ray measurements are presented. The first series of integral measurements made it possible to map the azimuthal dependence of the hard X radiation

Surface effects in segmented silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Kopsalis, Ioannis

2017-05-15

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO{sub 2} layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO{sub 2} and at the Si-SiO{sub 2} interface. In this thesis the surface radiation damage of the Si-SiO{sub 2} system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO{sub 2} of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface

Surface effects in segmented silicon sensors

International Nuclear Information System (INIS)

Kopsalis, Ioannis

2017-05-01

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface. In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

Hard synchrotron radiation scattering from a nonideal surface grating from multilayer X-ray mirrors

International Nuclear Information System (INIS)

Punegov, V.I.; Nesterets, Ya.I.; Mytnichenko, S.V.; Kovalenko, N.V.; Chernov, V.A.

2003-01-01

The hard synchrotron radiation scattering from a multilayer surface grating is theoretically and experimentally investigated. The numerical calculations of angular distribution of scattering intensity from X-ray mirror Ni/C are executed with use of recurrence formulae and statistical dynamical theory of diffraction. It is shown, that the essential role in formation of a diffraction pattern plays a diffuse scattering caused by structure imperfection of a multilayer grating [ru

Radiation hardness tests of piezoelectric actuators with fast neutrons at liquid helium temperature

Energy Technology Data Exchange (ETDEWEB)

Fouaidy, M.; Martinet, G.; Hammoudi, N.; Chatelet, F.; Olivier, A.; Blivet, S.; Galet, F. [CNRS-IN2P3-IPN Orsay, Orsay (France)

2007-07-01

Piezoelectric actuators, which are integrated into the cold tuning system and used to compensate the small mechanical deformations of the cavity wall induced by Lorentz forces due to the high electromagnetic surface field, may be located in the radiation environment during particle accelerator operation. In order to provide for a reliable operation of the accelerator, the performance and life time of piezoelectric actuators ({approx}24.000 units for ILC) should not show any significant degradation for long periods (i.e. machine life duration: {approx}20 years), even when subjected to intense radiation (i.e. gamma rays and fast neutrons). An experimental program, aimed at investigating the effect of fast neutrons radiation on the characteristics of piezoelectric actuators at liquid helium temperature (i.e. T{approx}4.2 K), was proposed for the working package WPNo.8 devoted to tuners development in the frame of CARE project. A neutrons irradiation facility, already installed at the CERI cyclotron located at Orleans (France), was upgraded and adapted for actuators irradiations tests purpose. A deuterons beam (maximum energy and beam current: 25 MeV and 35{mu}A) collides with a thin (thickness: 3 mm) beryllium target producing a high neutrons flux with low gamma dose ({approx}20%): a neutrons fluence of more than 10{sup 14} n/cm{sup 2} is achieved in {approx}20 hours of exposure. A dedicated cryostat was developed at IPN Orsay and used previously for radiation hardness test of calibrated cryogenic thermometers and pressure transducers used in LHC superconducting magnets. This cryostat could be operated either with liquid helium or liquid argon. This irradiation facility was upgraded for allowing fast turn-over of experiments and a dedicated experimental set-up was designed, fabricated, installed at CERI and successfully operated for radiation hardness tests of several piezoelectric actuators at T{approx}4.2 K. This new apparatus allows on-line automatic measurements

Radiation hardness tests of piezoelectric actuators with fast neutrons at liquid helium temperature

International Nuclear Information System (INIS)

Fouaidy, M.; Martinet, G.; Hammoudi, N.; Chatelet, F.; Olivier, A.; Blivet, S.; Galet, F.

2007-01-01

Piezoelectric actuators, which are integrated into the cold tuning system and used to compensate the small mechanical deformations of the cavity wall induced by Lorentz forces due to the high electromagnetic surface field, may be located in the radiation environment during particle accelerator operation. In order to provide for a reliable operation of the accelerator, the performance and life time of piezoelectric actuators (∼24.000 units for ILC) should not show any significant degradation for long periods (i.e. machine life duration: ∼20 years), even when subjected to intense radiation (i.e. gamma rays and fast neutrons). An experimental program, aimed at investigating the effect of fast neutrons radiation on the characteristics of piezoelectric actuators at liquid helium temperature (i.e. T∼4.2 K), was proposed for the working package WPNo.8 devoted to tuners development in the frame of CARE project. A neutrons irradiation facility, already installed at the CERI cyclotron located at Orleans (France), was upgraded and adapted for actuators irradiations tests purpose. A deuterons beam (maximum energy and beam current: 25 MeV and 35μA) collides with a thin (thickness: 3 mm) beryllium target producing a high neutrons flux with low gamma dose (∼20%): a neutrons fluence of more than 10 14 n/cm 2 is achieved in ∼20 hours of exposure. A dedicated cryostat was developed at IPN Orsay and used previously for radiation hardness test of calibrated cryogenic thermometers and pressure transducers used in LHC superconducting magnets. This cryostat could be operated either with liquid helium or liquid argon. This irradiation facility was upgraded for allowing fast turn-over of experiments and a dedicated experimental set-up was designed, fabricated, installed at CERI and successfully operated for radiation hardness tests of several piezoelectric actuators at T∼4.2 K. This new apparatus allows on-line automatic measurements of actuators characteristics and the

ARTIST: advanced radiation-tolerant information and sensor system for teleoperation

International Nuclear Information System (INIS)

Schmidt, D.; Pathe, V.; Ostertag, M.; Dittrich, F.; Dumbreck, A.; Sirat, G.; Katzouraki, M.

1993-01-01

ARTIST integrates a stereoscopic camera and a rangefinder as sensor package into a high-precision pan-and-tilt head and represents the recorded data in a clear and comprehensive way for telemanipulation and control tasks as well as for remote driving. The sensors as well as the pan-and-tilt head are radiation-tolerant so they can be used in nuclear environments. The pan-and-tilt head and work station are completely configured and developed with the emphasis on multisensor integration, real-time video processing and graphical position representation. An efficient man-machine-interface appropriate software is included. (author)

Object-Oriented Hierarchy Radiation Consistency for Different Temporal and Different Sensor Images

Directory of Open Access Journals (Sweden)

Nan Su

2018-02-01

Full Text Available In the paper, we propose a novel object-oriented hierarchy radiation consistency method for dense matching of different temporal and different sensor data in the 3D reconstruction. For different temporal images, our illumination consistency method is proposed to solve both the illumination uniformity for a single image and the relative illumination normalization for image pairs. Especially in the relative illumination normalization step, singular value equalization and linear relationship of the invariant pixels is combined used for the initial global illumination normalization and the object-oriented refined illumination normalization in detail, respectively. For different sensor images, we propose the union group sparse method, which is based on improving the original group sparse model. The different sensor images are set to a similar smoothness level by the same threshold of singular value from the union group matrix. Our method comprehensively considered the influence factors on the dense matching of the different temporal and different sensor stereoscopic image pairs to simultaneously improve the illumination consistency and the smoothness consistency. The radiation consistency experimental results verify the effectiveness and superiority of the proposed method by comparing two other methods. Moreover, in the dense matching experiment of the mixed stereoscopic image pairs, our method has more advantages for objects in the urban area.

Radiation-hard ASICS for sLHC optical data transmission

International Nuclear Information System (INIS)

Gan, K.K.

2009-01-01

High-speed data transmission in a high radiation environment poses an immense challenge in the detector design. We investigate the feasibility of using optical links for the silicon trackers of the ATLAS experiment for the planned upgrade of the LHC. The planned upgrade with ten times higher collision rate will produce a similar increase in the radiation. One possibility for the optical transmission is to use VCSEL arrays operating at 850 nm to transmit optical signals while using PIN arrays to convert the optical signals into electrical signals. We have designed a prototype chip containing building blocks for future SLHC optical links using a 130 nm CMOS 8RF process. The chip contains four main blocks; a VCSEL driver optimized for operation at 640 Mb/s, a VCSEL driver optimized for 3.2 Gb/s, a PIN receiver with a clock/data recovery circuit for operation at 40, 160, and 320 Mb/s, and two clock multipliers designed to operate at 640 Mb/s. The clock multiplier is designed to produce the high speed clock to serialize the data for transmission. All circuitry was designed following test results and guidelines from CERN on radiation tolerant design for the process. We have irradiated the chips with 24 GeV protons at CERN. For the VDC, the duty cycle of the output signal and the current consumption of the LVDS receiver remained constant during the irradiation. However, we observed significant decreases in the current consumption of the VCSEL driver circuit and the output drive current. This indicated that the think oxide layout used in the VCSEL driver portion of the chip might not be as radiation-hard and the circuit had been redesigned to minimize this sensitivity. For the PIN receiver, we found that the radiation produced no significant degradation, including the single event upset rate. The upset rate decreased with larger PIN current and was higher for a chip coupled to a PIN diode as expected. For the clock multipliers, we observed that the clocks of some chips

Chalcogenide Glass Radiation Sensor; Materials Development, Design and Device Testing

Energy Technology Data Exchange (ETDEWEB)

Mitkova, Maria; Butt, Darryl; Kozicki, Michael; Barnaby, Hugo

2013-04-30

studied the effect of x-rays and γ-rays, on thin film chalcogenide glasses and applied them in conjunction with film incorporating a silver source in a new type of radiation sensor for which we have an US patent application [3]. In this report, we give data about our studies regarding our designed radiation sensor along with the testing and performance at various radiation doses. These studies have been preceded by materials characterization research related to the compositional and structural characteristics of the active materials used in the radiation sensor design. During the work on the project, we collected a large volume of material since every experiment was repeated many times to verify the results. We conducted a comprehensive material research, analysis and discussion with the aim to understand the nature of the occurring effects, design different structures to harness these effects, generated models to aid in the understanding the effects, built different device structures and collected data to quantify device performance. These various aspects of our investigation have been detailed in previous quarterly reports. In this report, we present our main results and emphasize on the results pertaining to the core project goals materials development, sensor design and testing and with an emphasis on classifying the appropriate material and design for the optimal application. The report has three main parts: (i) Presentation of the main data; (ii) Bulleted summary of the most important results; (iii) List of the patent, journal publications, conference proceedings and conferences participation, occurring as a result of working on the project.

Ultrasensitive Wearable Soft Strain Sensors of Conductive, Self-healing, and Elastic Hydrogels with Synergistic "Soft and Hard" Hybrid Networks.

Science.gov (United States)

Liu, Yan-Jun; Cao, Wen-Tao; Ma, Ming-Guo; Wan, Pengbo

2017-08-02

Robust, stretchable, and strain-sensitive hydrogels have recently attracted immense research interest because of their potential application in wearable strain sensors. The integration of the synergistic characteristics of decent mechanical properties, reliable self-healing capability, and high sensing sensitivity for fabricating conductive, elastic, self-healing, and strain-sensitive hydrogels is still a great challenge. Inspired by the mechanically excellent and self-healing biological soft tissues with hierarchical network structures, herein, functional network hydrogels are fabricated by the interconnection between a "soft" homogeneous polymer network and a "hard" dynamic ferric (Fe 3+ ) cross-linked cellulose nanocrystals (CNCs-Fe 3+ ) network. Under stress, the dynamic CNCs-Fe 3+ coordination bonds act as sacrificial bonds to efficiently dissipate energy, while the homogeneous polymer network leads to a smooth stress-transfer, which enables the hydrogels to achieve unusual mechanical properties, such as excellent mechanical strength, robust toughness, and stretchability, as well as good self-recovery property. The hydrogels demonstrate autonomously self-healing capability in only 5 min without the need of any stimuli or healing agents, ascribing to the reorganization of CNCs and Fe 3+ via ionic coordination. Furthermore, the resulted hydrogels display tunable electromechanical behavior with sensitive, stable, and repeatable variations in resistance upon mechanical deformations. Based on the tunable electromechanical behavior, the hydrogels can act as a wearable strain sensor to monitor finger joint motions, breathing, and even the slight blood pulse. This strategy of building synergistic "soft and hard" structures is successful to integrate the decent mechanical properties, reliable self-healing capability, and high sensing sensitivity together for assembling a high-performance, flexible, and wearable strain sensor.

The development of gamma energy identify algorithm for compact radiation sensors using stepwise refinement technique

Energy Technology Data Exchange (ETDEWEB)

Yoo, Hyun Jun [Div. of Radiation Regulation, Korea Institute of Nuclear Safety, Daejeon (Korea, Republic of); Kim, Ye Won; Kim, Hyun Duk; Cho, Gyu Seong [Dept. of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of); Yi, Yun [Dept. of of Electronics and Information Engineering, Korea University, Seoul (Korea, Republic of)

2017-06-15

A gamma energy identifying algorithm using spectral decomposition combined with smoothing method was suggested to confirm the existence of the artificial radio isotopes. The algorithm is composed by original pattern recognition method and smoothing method to enhance the performance to identify gamma energy of radiation sensors that have low energy resolution. The gamma energy identifying algorithm for the compact radiation sensor is a three-step of refinement process. Firstly, the magnitude set is calculated by the original spectral decomposition. Secondly, the magnitude of modeling error in the magnitude set is reduced by the smoothing method. Thirdly, the expected gamma energy is finally decided based on the enhanced magnitude set as a result of the spectral decomposition with the smoothing method. The algorithm was optimized for the designed radiation sensor composed of a CsI (Tl) scintillator and a silicon pin diode. The two performance parameters used to estimate the algorithm are the accuracy of expected gamma energy and the number of repeated calculations. The original gamma energy was accurately identified with the single energy of gamma radiation by adapting this modeling error reduction method. Also the average error decreased by half with the multi energies of gamma radiation in comparison to the original spectral decomposition. In addition, the number of repeated calculations also decreased by half even in low fluence conditions under 104 (/0.09 cm{sup 2} of the scintillator surface). Through the development of this algorithm, we have confirmed the possibility of developing a product that can identify artificial radionuclides nearby using inexpensive radiation sensors that are easy to use by the public. Therefore, it can contribute to reduce the anxiety of the public exposure by determining the presence of artificial radionuclides in the vicinity.

Development of semiconductor radiation sensors for portable alarm-dosimeter

Energy Technology Data Exchange (ETDEWEB)

Kim, Y. K.; Moon, B. S.; Chung, C. E.; Hong, S. B.; Kim, J. Y.; Kim, J. B.; Han, S. H.; Lee, W. G. [Korea Atomic Energy Research Institute, Taejeon (Korea)

2001-01-01

We studied Semiconductor Radiation Sensors for Portable Alarm-Dosimeter. We calculated response functions for gamma energy 0.021, 0.122, 0.662, 0.835, 1.2 MeV using EGS4 codes. When we measured at various distance from source to detector, the detection efficiency of Si semiconductor detector was better than that of GM tube. The linear absorption coefficients of steel and aluminum plate were measured. These experimental results of the response of detector for intensity of radiation field coincide to the theoretical expectation. The count value of Si detector was changed with changing thickness of steel as changing threshold voltage of discriminator, and the linear absorption coefficient increased with increasing threshold voltage. Radiation detection efficiency shows difference at each threshold voltage condition. This results coincided to the theoretical simulation. 33 refs., 27 figs., 8 tabs. (Author)

Radiation sensors based on GaN microwires

Science.gov (United States)

Verheij, D.; Peres, M.; Cardoso, S.; Alves, L. C.; Alves, E.; Durand, C.; Eymery, J.; Lorenz, K.

2018-05-01

GaN microwires were shown to possess promising characteristics as building blocks for radiation resistant particle detectors. They were grown by metal organic vapour phase epitaxy with diameters between 1 and 2 μm and lengths around 20 μm. Devices were fabricated by depositing gold contacts at the extremities of the wires using photolithography. The response of these single wire radiation sensors was then studied under irradiation with 2 MeV protons. Severe degradation of the majority of devices only sets in for fluences above protons cm‑2 revealing good radiation resistance. During proton irradiation, a clear albeit small current gain was observed with a corresponding decay time below 1 s. Photoconductivity measurements upon irradiation with UV light were carried out before and after the proton irradiation. Despite a relatively low gain, attributed to significant dark currents caused by a high dopant concentration, fast response times of a few seconds were achieved comparable to state-of-the-art GaN nanowire photodetectors. Irradiation and subsequent annealing resulted in an overall improvement of the devices regarding their response to UV radiation. The photocurrent gain increased compared to the values that were obtained prior to the irradiation, without compromising the decay times. The results indicate the possibility of using GaN microwires not only as UV detectors, but also as particle detectors.

A radiation hard dipole magnet coils using aluminum clad copper conductors

International Nuclear Information System (INIS)

Leonhardt, W.J.

1989-01-01

A C-type septum dipole magnet is located 600 mm downstream of the primary target in an external beam line of the AGS. Conventional use of fiber glass/epoxy electrical insulation for the magnet coils results in their failure after a relatively short running period, therefore a radiation hard insulation system is required. This is accomplished by replacing the existing copper conductor with a copper conductor having a thin aluminum skin which is anodized to provide the electrical insulation. Since the copper supports a current density of 59 A/mm 2 , no reduction in cross sectional area can be tolerated. Design considerations, manufacturing techniques, and operating experience of a prototype dipole is presented. 3 refs., 4 figs

Study of Radiation Hardness of Gd2SiO5 scintillator for Heavy Ion Beam

CERN Document Server

Kawade, K; Itow, Y; Masuda, K; Murakami, T; Sako,T; Suzuki, K; Suzuki, T; Taki, K

2011-01-01

Gd2SiO5 (GSO) scintillator has very excellent radiation resistance, a fast decay time and a large light yield. Because of these features, GSO scintillator is a suitable material for high radiation environment experiments such as those encountered at high energy accelerators. The radiation hardness of GSO has been measured with Carbon ion beams at the Heavy Ion Medical Accelerator in Chiba (HIMAC). During two nights of irradiation the GSO received a total radiation dose of 7 × 10$^5$ Gy and no decrease of light yield was observed. On the other hand an increase of light yield by 25% was observed. The increase is proportional to the total dose, increasing at a rate of 0.025%/Gy and saturating at around 1 kGy. Recovery to the initial light yield was also observed during the day between two nights of radiation exposure. The recovery was observed to have a slow exponential time constant of approximately 1.5 × 10$^4$ seconds together with a faster component. In case of the LHCf experiment, a very forward region ex...

Performance of light sources and radiation sensors under low gravity realized by parabolic airplane flights

Science.gov (United States)

Hirai, Hiroaki; Kitaya, Yoshiaki; Hirai, Takehiro

A fundamental study was conducted to establish an experimental system for space farming. Since to ensure optimal light for plant cultivation in space is of grave importance, this study examined the performance of light sources and radiation sensors under microgravity conditions created during the parabolic airplane flight. Three kinds of light sources, a halogen bulb, a fluorescent tube, and blue and red LEDs, and ten models of radiation sensors available in the market were used for the experiment. Surface temperature of the light sources, output signals from the radiation sensors, spectroscopic characteristics were measured at the gravity levels of 0.01, 1.0 and 1.8 G for 20 seconds each during parabolic airplane flights. As a result, the performance of the halogen lamp was affected the most by the gravity level among the three light sources. Under the microgravity conditions which do not raise heat convection, the temperature of the halogen lamp rose and the output of the radiation sensors increased. Spectral distributions of the halogen lamp indicated that peak wavelength appeared the highest at the level of 0.01G, which contributed to the increase in light intensity. In the case of red and blue LEDs, which are promising light sources in space farming, the temperature of both LED chips rose but irradiance from red LED increased and that from blue LED decreased under microgravity conditions due to the different thermal characteristics.

Multi-sensor radiation detector system

International Nuclear Information System (INIS)

Foster, R.G.; Cyboron, R.D.

1975-01-01

The invention is a multi-sensor radiation detection system including a self-powered detector and an ion or fission chamber, preferably joined as a unitary structure, for removable insertion into a nuclear reactor. The detector and chamber are connected electrically in parallel, requiring but two conductors extending out of the reactor to external electrical circuitry which includes a load impedance, a voltage source, and switch means. The switch means are employed to alternately connect the detector and chamber either with th load impedance or with the load impedance and the voltage source. In the former orientation, current through the load impedance indicates flux intensity at the self-powered detector and in the latter orientation, the current indicates flux intensity at the detector and fission chamber, though almost all of the current is contributed by the fission chamber. (auth)

Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project

CERN Document Server

Huffman, B T; Arndt, K; Bates, R; Benoit, M; Di Bello, F; Blue, A; Bortoletto, D; Buckland, M; Buttar, C; Caragiulo, P; Das, D; Dopke, J; Dragone, A; Ehrler, F; Fadeyev, V; Galloway, Z; Grabas, H; Gregor, I M; Grenier, P; Grillo, A; Hoeferkamp, M; Hommels, L B A; John, J; Kanisauskas, K; Kenney, C; Kramberger, J; Liang, Z; Mandic, I; Maneuski, D; Martinez-McKinney, F; McMahon, S; Meng, L; Mikuž, M; Muenstermann, D; Nickerson, R; Peric, I; Phillips, P; Plackett, R; Rubbo, F; Segal, J; Seidel, S; Seiden, A; Shipsey, I; Song, W; Stanitzki, M; Su, D; Tamma, C; Turchetta, R; Vigani, L; olk, J; Wang, R; Warren, M; Wilson, F; Worm, S; Xiu, Q; Zhang, J; Zhu, H

2016-01-01

The LHC luminosity upgrade, known as the High Luminosity LHC (HL-LHC), will require the replacement of the existing silicon strip tracker and the transistion radiation tracker. Although a baseline design for this tracker exists the ATLAS collaboration and other non-ATLAS groups are exploring the feasibility of using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in a strip-like fashion and would take advantage of the service and support structure already being developed for the upgrade. Two test devices made with theAMSH35 process (a High voltage or HV CMOS process) have been subjected to various radiation environments and have performed well. The results of these tests are presented in this paper.

SREQP: A Solar Radiation Extraction and Query Platform for the Production and Consumption of Linked Data from Weather Stations Sensors

Directory of Open Access Journals (Sweden)

José Luis Sánchez-Cervantes

2016-01-01

Full Text Available Nowadays, solar radiation information is provided from sensors installed in different geographic locations and platforms of meteorological agencies. However, common formats such as PDF files and HTML documents to provide solar radiation information do not offer semantics in their content, and they may pose problems to integrate and fuse data from multiple resources. One of the challenges of sensors Web is the unification of data from multiple sources, although this type of information facilitates interoperability with other sensor Web systems. This research proposes architecture SREQP (Solar Radiation Extraction and Query Platform to extract solar radiation data from multiple external sources and merge them on a single and unique platform. SREQP makes use of Linked Data to generate a set of triples containing information about extracted data, which allows final users to query data through a SPARQL endpoint. The conceptual model was developed by using known vocabularies, such as SSN or WGS84. Moreover, an Analytic Hierarchy Process was carried out for the evaluation of SREQP in order to identify and evaluate the main features of Linked-Sensor-Data and the sensor Web systems. Results from the evaluation indicated that SREQP contained most of the features considered essential in Linked-Sensor-Data and sensor Web systems.

Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

CERN Document Server

Despeisse, M; Jarron, P; Kaplon, J; Moraes, D; Nardulli, A; Powolny, F; Wyrsch, N

2008-01-01

Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three different circuits were designed in a quarter micron CMOS technology for these studies. The so-called TFA (Thin-Film on ASIC) detectors obtained after deposition of a-Si:H sensors on the developed circuits are presented. High internal electric fields (104 to 105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in this amorphous material. However, the deposited sensor's leakage current at such fields turns out to be an important parameter which limits the performance of a TFA detector. Its detailed study is presented as well as the detector's pixel segmentation. Signal induction by generated free carrier motion in the a-Si:H sensor has been characterized using a 660 nm pul...

Electrical characterization of thin edgeless N-on-p planar pixel sensors for ATLAS upgrades

International Nuclear Information System (INIS)

Bomben, M; Calderini, G; Chauveau, J; Marchiori, G; Bagolini, A; Boscardin, M; Giacomini, G; Zorzi, N; Bosisio, L; Rosa, A La

2014-01-01

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given

Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

National Research Council Canada - National Science Library

Ahn, Charles H

2006-01-01

The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

CERN Document Server

INSPIRE-00052711; Boscardin, Maurizio; Bosisio, Luciano; Calderini, Giovanni; Chauveau, Jacques; Ducourthial, Audrey; Giacomini, Gabriele; Marchiori, Giovanni; Zorzi, Nicola

2016-01-01

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.

Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

Energy Technology Data Exchange (ETDEWEB)

Calderini, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa (Italy); Bagolini, A. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Beccherle, R. [Istituto Nazionale di Fisica Nucleare, Sez. di Pisa (Italy); Bomben, M. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bosisio, L. [Università degli studi di Trieste (Italy); INFN-Trieste (Italy); Chauveau, J. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Universitè de Geneve, Geneve (Switzerland); Marchiori, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy)

2016-09-21

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed.

Degradation of CMOS image sensors in deep-submicron technology due to γ-irradiation

Science.gov (United States)

Rao, Padmakumar R.; Wang, Xinyang; Theuwissen, Albert J. P.

2008-09-01

In this work, radiation induced damage mechanisms in deep submicron technology is resolved using finger gated-diodes (FGDs) as a radiation sensitive tool. It is found that these structures are simple yet efficient structures to resolve radiation induced damage in advanced CMOS processes. The degradation of the CMOS image sensors in deep-submicron technology due to γ-ray irradiation is studied by developing a model for the spectral response of the sensor and also by the dark-signal degradation as a function of STI (shallow-trench isolation) parameters. It is found that threshold shifts in the gate-oxide/silicon interface as well as minority carrier life-time variations in the silicon bulk are minimal. The top-layer material properties and the photodiode Si-SiO2 interface quality are degraded due to γ-ray irradiation. Results further suggest that p-well passivated structures are inevitable for radiation-hard designs. It was found that high electrical fields in submicron technologies pose a threat to high quality imaging in harsh environments.

Unified Research on Network-Based Hard/Soft Information Fusion

Science.gov (United States)

2016-02-02

3.2.1 Hard +Soft Data Association Data gathered during various Counterinsurgency (or COIN) operations is in different formats . For example, the...characteristic, observation time, and related data. Figure 45: Sample snapshot frame from hard sensor data TML formats were developed and...160 Figure 54: Penn State components of overall hard and soft fusion process Summary of Year 1 Accomplishments • Team formation • Initial

Electrical measurements of silicon sensors for the upgrade of the CMS detector; Vermessung von Siliziumsensoren fuer das Upgrade des CMS-Detektors

Energy Technology Data Exchange (ETDEWEB)

Stegler, Martin

2013-05-15

Because of the upgrade in the LHC (2020-2022), in which the luminosity is increased to above 5.10{sup 34} cm{sup -2}s{sup -1}, in the CMS tracker a much higher radiation exposure than hitherto is to be expected. Therefore radiation-hardened sensors are required. For this reason in the framework of the Hamamatsu-Photonics-KK campaign among others Mpix sensors are studied. Furthermore they are tested concerning their material properties by characterizing befor and after the irradiation. Also the optimal geometry is searched for. This thesis studies two substrate types of the same thickness with two isolating mechanisms. Thereby also the influence of the geometry and different bias structures is regarded in order to draw conclusions on the radiation hardness.

Research on continuous environmental radiation monitoring system for NPP based on wireless sensor network

International Nuclear Information System (INIS)

Fu Hailong; Jia Mingchun; Peng Guichu

2010-01-01

According to the characteristics of environmental gamma radiation monitoring and the requirement of nuclear power plant (NPP) developing, a new continuous environmental radiation monitoring system based on wireless sensor network (WSN) was presented. The basic concepts and application of WSN were introduced firstly. And then the characteristics of the new system were analyzed. At the same time the configuration of the WSN and the whole structure of the system were built. Finally, the crucial techniques used in system designing, such as the design of sensor node, the choice of communication mode and protocol, the time synchronization and space location, the security of the network and the faults tolerance were introduced. (authors)

Silicon Sensors for High-Luminosity Trackers - RD50 Collaboration Status Report

CERN Document Server

Kuehn, Susanne

2014-01-01

The revised schedule for the Large Hadron Collider (LHC) upg rade foresees a significant increase of the luminosity of the LHC by upgrading towards the HL-LHC ( High Luminosity-LHC). The final upgrade is planned for around the year 2023, followed by the HL-LHC running. This is motivated by the need to harvest the maximum physics potenti al from the machine. It is clear that the high integrated luminosity of 3000 fb − 1 will result in very high radiation levels, which manifest a serious challenge for the detectors. This is espe cially true for the tracking detectors installed close to the interaction point. For HL-LHC, all-s ilicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silico n sensors to be employed in the innermost layers. Within the RD50 Collaboration, a massive R&D; program is underway, with an open cooperation across experimental boundaries to deve lop silicon sensors with sufficient radiation tolerance. This report presents several researc h topics...

An edge-TCT setup for the investigation of radiation damaged silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Feindt, Finn; Scharf, Christian; Garutti, Erika; Klanner, Robert [Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg (Germany)

2016-07-01

The aim of this work is to measure the electric field, drift velocity and charge collection of electrons and holes in radiation-damaged silicon strip sensors. For this purpose the edge Transient Current Technique (TCT) is employed. In contrast to conventional TCT, this method requires light from a sub-ns pulsed, infrared laser to be focused to a μm-size spot and scanned across the polished edge of a strip sensor. Thus electron-hole pairs are generated at a known depth in the sensor. Electrons and holes drift in the electric field and induce transient currents on the sensor electrodes. The current wave forms are analyzed as a function of the applied voltage and the position of the laser focus in order to determine the electric field, the drift velocities and the charge collection. In this talk the setup and the procedure for polishing the sensor edge are described, and first results, regarding the measurement of the laser light focus are presented.

The CMS Tracker Upgrade for HL-LHC\\\\ Sensor R$\\&$D

CERN Document Server

Naseri, Mohsen

2014-01-01

At an instantaneous luminosity of 5~$\\times10^{34}~cm^{-2}~s^{-1}$, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of 3000~fb$^{-1}$ of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation environment of the tracking system will be severe, requiring new radiation hard sensors for the CMS tracker. Focusing on the upgrade of the outer tracker region, the CMS tracker collaboration has almost completed a large material investigation and irradiation campaign to identify the silicon material and design that fulfils all requirements of a new tracking detector at HL-LHC. Focusing on the upgrade of the outer tracker region, pad diodes as well as fully functional strip sensors have been implemented on silicon wafers with different material properties and thicknesses. The samples were irradiated with a mixture of neutrons and protons corresponding to fluences as expected for various positions in the future track...

Physical retrieval of precipitation water contents from Special Sensor Microwave/Imager (SSM/I) data. Part 1: A cloud ensemble/radiative parameterization for sensor response (report version)

Science.gov (United States)

Olson, William S.; Raymond, William H.

1990-01-01

The physical retrieval of geophysical parameters based upon remotely sensed data requires a sensor response model which relates the upwelling radiances that the sensor observes to the parameters to be retrieved. In the retrieval of precipitation water contents from satellite passive microwave observations, the sensor response model has two basic components. First, a description of the radiative transfer of microwaves through a precipitating atmosphere must be considered, because it is necessary to establish the physical relationship between precipitation water content and upwelling microwave brightness temperature. Also the spatial response of the satellite microwave sensor (or antenna pattern) must be included in the description of sensor response, since precipitation and the associated brightness temperature field can vary over a typical microwave sensor resolution footprint. A 'population' of convective cells, as well as stratiform clouds, are simulated using a computationally-efficient multi-cylinder cloud model. Ensembles of clouds selected at random from the population, distributed over a 25 km x 25 km model domain, serve as the basis for radiative transfer calculations of upwelling brightness temperatures at the SSM/I frequencies. Sensor spatial response is treated explicitly by convolving the upwelling brightness temperature by the domain-integrated SSM/I antenna patterns. The sensor response model is utilized in precipitation water content retrievals.

Field test of wireless sensor network in the nuclear environment

International Nuclear Information System (INIS)

Li, L.; Wang, Q.; Bari, A.; Deng, C.; Chen, D.; Jiang, J.; Alexander, Q.; Sur, B.

2014-01-01

Wireless sensor networks (WSNs) are appealing options for the health monitoring of nuclear power plants due to their low cost and flexibility. Before they can be used in highly regulated nuclear environments, their reliability in the nuclear environment and compatibility with existing devices have to be assessed. In situ electromagnetic interference tests, wireless signal propagation tests, and nuclear radiation hardness tests conducted on candidate WSN systems at AECL Chalk River Labs are presented. The results are favourable to WSN in nuclear applications. (author)

Field test of wireless sensor network in the nuclear environment

Energy Technology Data Exchange (ETDEWEB)

Li, L., E-mail: lil@aecl.ca [Atomic Energy of Canada Limited, Chalk River, Ontario (Canada); Wang, Q.; Bari, A. [Univ. of Western Ontario, London, Ontario (Canada); Deng, C.; Chen, D. [Univ. of Electronic Science and Technology of China, Chengdu, Sichuan (China); Jiang, J. [Univ. of Western Ontario, London, Ontario (Canada); Alexander, Q.; Sur, B. [Atomic Energy of Canada Limited, Chalk River, Ontario (Canada)

2014-06-15

Wireless sensor networks (WSNs) are appealing options for the health monitoring of nuclear power plants due to their low cost and flexibility. Before they can be used in highly regulated nuclear environments, their reliability in the nuclear environment and compatibility with existing devices have to be assessed. In situ electromagnetic interference tests, wireless signal propagation tests, and nuclear radiation hardness tests conducted on candidate WSN systems at AECL Chalk River Labs are presented. The results are favourable to WSN in nuclear applications. (author)

Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics

Energy Technology Data Exchange (ETDEWEB)

Sun, K.

2011-05-04

This slide show presents: space exploration applications; high energy density physics applications; UV LED and photodiode radiation hardness; UV LED and photodiode space qualification; UV LED AC charge management; and UV LED satellite payload instruments. A UV LED satellite will be launched 2nd half 2012.

First bulk and surface results for the ATLAS ITk stereo annulus sensors

CERN Document Server

Abidi, Syed Haider; The ATLAS collaboration; Bohm, Jan; Botte, James Michael; Ciungu, Bianca; Dette, Karola; Dolezal, Zdenek; Escobar, Carlos; Fadeyev, Vitaliy; Fernandez-Tejero, Xavi; Garcia-Argos, Carlos; Gillberg, Dag; Hara, Kazuhiko; Hunter, Robert Francis Holub

2018-01-01

A novel microstrip sensor geometry, the “stereo annulus”, has been developed for use in the end-cap of the ATLAS experiment’s strip tracker upgrade at the High-Luminosity Large Hadron Collider (HL- LHC). The radiation-hard, single-sided, ac-coupled, n + -in-p microstrip sensors are designed by the ITk Strip Sensor Collaboration and produced by Hamamatsu Photonics. The stereo annulus design has the potential to revolutionize the layout of end-cap microstrip trackers promising better tracking performance and more complete coverage than the contemporary configurations. These advantages are achieved by the union of equal length, radially oriented strips with a small stereo angle implemented directly into the sensor surface. The first-ever results for the stereo annulus geometry have been collected across several sites world- wide and are presented here. A number of full-size, unirradiated sensors were evaluated for their mechanical, bulk, and surface properties. The new device, the ATLAS12EC, is compared ag...

Large area thinned planar sensors for future high-luminosity-LHC upgrades

International Nuclear Information System (INIS)

Wittig, T.; Lawerenz, A.; Röder, R.

2016-01-01

Planar hybrid silicon sensors are a well proven technology for past and current particle tracking detectors in HEP experiments. However, the future high-luminosity upgrades of the inner trackers at the LHC experiments pose big challenges to the detectors. A first challenge is an expected radiation damage level of up to 2⋅ 10 16 n eq /cm 2 . For planar sensors, one way to counteract the charge loss and thus increase the radiation hardness is to decrease the thickness of their active area. A second challenge is the large detector area which has to be built as cost-efficient as possible. The CiS research institute has accomplished a proof-of-principle run with n-in-p ATLAS-Pixel sensors in which a cavity is etched to the sensor's back side to reduce its thickness. One advantage of this technology is the fact that thick frames remain at the sensor edges and guarantee mechanical stability on wafer level while the sensor is left on the resulting thin membrane. For this cavity etching technique, no handling wafers are required which represents a benefit in terms of process effort and cost savings. The membranes with areas of up to ∼ 4 × 4 cm 2 and thicknesses of 100 and 150 μm feature a sufficiently good homogeneity across the whole wafer area. The processed pixel sensors show good electrical behaviour with an excellent yield for a suchlike prototype run. First sensors with electroless Ni- and Pt-UBM are already successfully assembled with read-out chips.

Large area thinned planar sensors for future high-luminosity-LHC upgrades

Science.gov (United States)

Wittig, T.; Lawerenz, A.; Röder, R.

2016-12-01

Planar hybrid silicon sensors are a well proven technology for past and current particle tracking detectors in HEP experiments. However, the future high-luminosity upgrades of the inner trackers at the LHC experiments pose big challenges to the detectors. A first challenge is an expected radiation damage level of up to 2ṡ 1016 neq/cm2. For planar sensors, one way to counteract the charge loss and thus increase the radiation hardness is to decrease the thickness of their active area. A second challenge is the large detector area which has to be built as cost-efficient as possible. The CiS research institute has accomplished a proof-of-principle run with n-in-p ATLAS-Pixel sensors in which a cavity is etched to the sensor's back side to reduce its thickness. One advantage of this technology is the fact that thick frames remain at the sensor edges and guarantee mechanical stability on wafer level while the sensor is left on the resulting thin membrane. For this cavity etching technique, no handling wafers are required which represents a benefit in terms of process effort and cost savings. The membranes with areas of up to ~ 4 × 4 cm2 and thicknesses of 100 and 150 μm feature a sufficiently good homogeneity across the whole wafer area. The processed pixel sensors show good electrical behaviour with an excellent yield for a suchlike prototype run. First sensors with electroless Ni- and Pt-UBM are already successfully assembled with read-out chips.

Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

Science.gov (United States)

Cattaneo, P. W.; Cervi, T.; Menegolli, A.; Oddone, M.; Prata, M.; Prata, M. C.; Rossella, M.

2017-07-01

Radiation hardness is an important requirement for solid state readout devices operating in high radiation environments common in particle physics experiments. The MEG II experiment, at PSI, Switzerland, investigates the forbidden decay μ+ → e+ γ. Exploiting the most intense muon beam of the world. A significant flux of non-thermal neutrons (kinetic energy Ek>= 0.5 MeV) is present in the experimental hall produced along the beam-line and in the hall itself. We present the effects of neutron fluxes comparable to the MEG II expected doses on several Silicon Photomultiplier (SiPMs). The tested models are: AdvanSiD ASD-NUV3S-P50 (used in MEG II experiment), AdvanSiD ASD-NUV3S-P40, AdvanSiD ASD-RGB3S-P40, Hamamatsu and Excelitas C30742-33-050-X. The neutron source is the thermal Sub-critical Multiplication complex (SM1) moderated with water, located at the University of Pavia (Italy). We report the change of SiPMs most important electric parameters: dark current, dark pulse frequency, gain, direct bias resistance, as a function of the integrated neutron fluency.

Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results

International Nuclear Information System (INIS)

Unno, Y.; Edwards, S.O.; Pyatt, S.; Thomas, J.P.; Wilson, J.A.; Kierstead, J.; Lynn, D.; Carter, J.R.; Hommels, L.B.A.; Robinson, D.; Bloch, I.; Gregor, I.M.; Tackmann, K.; Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L.; Clark, A.

2014-01-01

We have been developing a novel radiation-tolerant n + -in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers

Real time sensor for therapeutic radiation delivery

International Nuclear Information System (INIS)

Bliss, M.; Craig, R.A.; Reeder, P.L.

1998-01-01

The invention is a real time sensor for therapeutic radiation. A probe is placed in or near the patient that senses in real time the dose at the location of the probe. The strength of the dose is determined by either an insertion or an exit probe. The location is determined by a series of vertical and horizontal sensing elements that gives the operator a real time read out dose location relative to placement of the patient. The increased accuracy prevents serious tissue damage to the patient by preventing overdose or delivery of a dose to a wrong location within the body. 14 figs

Development of radiation tolerant semiconductor detectors for the Super-LHC

CERN Document Server

Moll, M; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Betta, G F D; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Fretwurst, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Sevilla, S G; Gorelov, I; Goss, J; Bates, A G; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, Roland Paul; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J A; Klaiber Lodewigs, J; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, S; Lazanu, I; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li Z; Lindström, G; Linhart, V; Litovchenko, A P; Litovchenko, P G; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Garcia, S Mi; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; OShea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

2005-01-01

The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 ...

Design of a 0-50 mbar pressure measurement channel compatible with the LHC tunnel radiation environment

Science.gov (United States)

Casas, Juan; Jelen, Dorota; Trikoupis, Nikolaos

2017-02-01

The monitoring of cryogenic facilities often require the measurement of pressure in the sub 5’000 Pa range that are used for flow metering applications, for saturated superfluid helium, etc. The pressure measurement is based on the minute displacement of a sensing diaphragm often through contactless techniques by using capacitive or inductive methods. The LHC radiation environment forbid the use of standard commercial sensors because of the embedded electronics that are affected both by radiation induced drift and transient Single Event Effects (SEE). Passive pressure sensors from two manufacturers were investigated and a CERN designed radiation-tolerant electronics has been developed for measuring variable-reluctance sensors. During the last maintenance stop of the LHC accelerator, four absolute pressure sensors were installed in some of the low pressure bayonet heat exchangers and four differential pressure sensors on the venturi flowmeters that monitor the cooling flow of the 20.5 kA current leads of the ATLAS end-cap superconducting toroids. The pressure sensors operating range is about 1000 to 5000 Pa and the targeted uncertainty is +/- 50 Pa which would permit to measure the equivalent saturation temperature at 1.8 K within better than 0.01 K. This paper describes the radiation hard measuring head that is based on an inductive bridge, its associated radiation-tolerant electronics that is installed under the LHC superconducting magnets or the ATLAS detector cavern; and the first operational experience.

Radiation hardness and precision timing study of Silicon Detectors for the CMS High Granularity Calorimeter (HGCAL)

CERN Document Server

Curras Rivera, Esteban

2016-01-01

The high luminosity LHC (HL-LHC or Phase-II) is expected to increase the instantaneous luminosity of the LHC by a factor of about five, delivering about 250 fba-1 per year between 2025 and 2035. Under these conditions the performance degradation of detectors due to integrated radiation dose/fluence will need to be addressed. The CMS collaboration is planning to upgrade many components, including the forward calorimeters. The replacement for the existing endcap preshower, electromagnetic and hadronic calorimeters is called the High Granularity Calorimeter (HGCAL) and it will be realized as a sampling calorimeter, including 30 layers of silicon detectors totalling 600m^2. The sensors will be realized as pad detectors with cell sizes of between 0.5-1.0 cm^2 and an active thickness between 100 um and 300 um depending on their location in the endcaps the thinner sensors will be used in the highest radiation environment. For an integrated luminosity of 3000 fba-1, the electromagnetic calorimetry will sustain integ...

Beam test of novel n-in-p strip sensors for high radiation environment

Science.gov (United States)

Kubota, T.; Kishida, T.; Jinnouchi, O.; Ikegami, Y.; Unno, Y.; Terada, S.; Mitsui, S.; Tamii, A.; Aoi, T.; Hanagaki, K.; Hara, K.; Kimura, N.; Takashima, R.; Takubo, Y.; Tojo, J.; Nagai, K.; Nakano, I.; Yorita, K.

2013-12-01

Highly radiation tolerant n-in-p strip sensors have been developed for the high-luminosity LHC (HL-LHC). This paper reports the results of measurements with 392 MeV kinetic energy proton beam at RCNP in December 2011. The data was taken with a new DAQ system consisting of an universal read-out board ‘SEABAS’ and beam tracking telescopes whose spacial resolution is better than 5 μm. The aim of this beam test is to evaluate the new 1 cm×1 cm n-in-p miniature sensors before and after 1015 neq cm-2 irradiation. The median charge of un-irradiated sensor is 6.2 fC at full depletion voltage, while the median charge after 1015 neq cm-2 irradiation of the sensor is 4.2 fC. The novel Punch-Through-Protection (PTP) has been implemented in these sensors. The length of active region of the sensor around PTP is observed to be decreased by 12 μm in the irradiated sensors at 1015 neq cm-2.

Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

International Nuclear Information System (INIS)

Terzo, S; Macchiolo, A; Nisius, R; Paschen, B

2014-01-01

Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 μm, produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of 1.4 × 10 16 n eq /cm 2

A synthetic dataset for evaluating soft and hard fusion algorithms

Science.gov (United States)

Graham, Jacob L.; Hall, David L.; Rimland, Jeffrey

2011-06-01

There is an emerging demand for the development of data fusion techniques and algorithms that are capable of combining conventional "hard" sensor inputs such as video, radar, and multispectral sensor data with "soft" data including textual situation reports, open-source web information, and "hard/soft" data such as image or video data that includes human-generated annotations. New techniques that assist in sense-making over a wide range of vastly heterogeneous sources are critical to improving tactical situational awareness in counterinsurgency (COIN) and other asymmetric warfare situations. A major challenge in this area is the lack of realistic datasets available for test and evaluation of such algorithms. While "soft" message sets exist, they tend to be of limited use for data fusion applications due to the lack of critical message pedigree and other metadata. They also lack corresponding hard sensor data that presents reasonable "fusion opportunities" to evaluate the ability to make connections and inferences that span the soft and hard data sets. This paper outlines the design methodologies, content, and some potential use cases of a COIN-based synthetic soft and hard dataset created under a United States Multi-disciplinary University Research Initiative (MURI) program funded by the U.S. Army Research Office (ARO). The dataset includes realistic synthetic reports from a variety of sources, corresponding synthetic hard data, and an extensive supporting database that maintains "ground truth" through logical grouping of related data into "vignettes." The supporting database also maintains the pedigree of messages and other critical metadata.

Radiation hard solar cell and array

International Nuclear Information System (INIS)

Russell, R.L.

1975-01-01

A power generating solar cell for a spacecraft solar array is hardened against transient response to nuclear radiation while permitting normal operation of the cell in a solar radiation environment by shunting the cell with a second solar cell whose contacts are reversed relative to the power cell to form a cell module, exposing the power cell only to the solar radiation in a solar radiation environment to produce an electrical output at the module terminals, and exposing both cells to the nuclear radiation in a nuclear radiation environment so that the radiation induced currents generated by the cells suppress one another

Characterization and Beam Tests Results of Non-Uniformly Irradiated 3D Pixel Sensors for HEP Experiments

International Nuclear Information System (INIS)

Lopez, I.; Grinstein, S.; Micelli, A.; Tsiskaridze, S.

2013-06-01

3D Pixel detectors, with cylindrical electrodes that penetrate the silicon substrate, offer advantages over standard planar sensors in terms of radiation hardness, since the charge collection distance can be reduced independently of the bulk thickness. In the framework of the ATLAS Forward Physics (AFP) program, work has been carried out to study the suitability of 3D pixel devices for forward proton tracking. The AFP tracker unit will consist of an array of five pixel sensors placed at 2-3 mm from the Large Hadron Collider (LHC) proton beam. The proximity to the beam is essential for the AFP physics program as it directly increases the sensitivity of the experiment. Thus, there are two critical requirements for the AFP pixel detector. First, the dead region of the sensor has to be minimized. Second, the device has to be able to cope with a very inhomogeneous radiation distribution. Recent results of the characterization and beam test studies of in-homogeneously irradiated 3D pixel sensors produced at CNM-Barcelona will be presented. (authors)

Cryogenic and radiation-hard asic for interfacing large format NIR/SWIR detector arrays

Science.gov (United States)

Gao, Peng; Dupont, Benoit; Dierickx, Bart; Müller, Eric; Verbruggen, Geert; Gielis, Stijn; Valvekens, Ramses

2017-11-01

For scientific and earth observation space missions, weight and power consumption is usually a critical factor. In order to obtain better vehicle integration, efficiency and controllability for large format NIR/SWIR detector arrays, a prototype ASIC is designed. It performs multiple detector array interfacing, power regulation and data acquisition operations inside the cryogenic chambers. Both operation commands and imaging data are communicated via the SpaceWire interface which will significantly reduce the number of wire goes in and out the cryogenic chamber. This "ASIC" prototype is realized in 0.18um CMOS technology and is designed for radiation hardness.

Characterization and radiation studies of diode test structures in LFoundry CMOS technology

Energy Technology Data Exchange (ETDEWEB)

Daas, Michael; Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Pohl, David-Leon; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Muenchen (Germany)

2016-07-01

In order to prepare for the High Luminosity upgrade of the LHC, all subdetector systems of the ATLAS experiment will be upgraded. In preparation for this process, different possibilities for new radiation-hard and cost-efficient silicon sensor technologies to be used as part of hybrid pixel detectors in the ATLAS inner tracker are being investigated. One promising way to optimize the cost-efficiency of silicon-based pixel detectors is to use commercially available CMOS technologies such as the 150 nm process by LFoundry. In this talk, several CMOS pixel test structures, such as simple diodes and small pixel arrays, that were manufactured in this technology are characterized regarding general performance and radiation hardness and compared to each other as well as to the current ATLAS pixel detector.

Étude des détecteurs planaires pixels durcis aux radiations pour la mise à jour du détecteur de vertex d'ATLAS

CERN Document Server

Benoit, Mathieu

In this work, is presented a study, using TCAD simulation, of the possible methods of designing of a planar pixel sensors by reducing their inactive area and improving their radiation hardness for use in the Insertable B-Layer (IBL) project and for SLHC upgrade phase for the ATLAS experiment. Different physical models available have been studied to develop a coherent model of radiation damage in silicon that can be used to predict silicon pixel sensor behavior after exposure to radiation. The Multi-Guard Ring Structure,a protection structure used in pixel sensor design was studied to obtain guidelines for the reduction of inactive edges detrimental to detector operation while keeping a good sensor behavior through its lifetime in the ATLAS detector. A campaign of measurement of the sensor's process parameters and electrical behavior to validate and calibrate the TCAD simulation models and results are also presented. A model for diode charge collection in highly irradiated environment was developed to explain ...

Photon technology. Hard photon technology; Photon technology. Hard photon gijutsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1996-03-01

Research results of hard photon technology have been summarized as a part of novel technology development highly utilizing the quantum nature of photon. Hard photon technology refers to photon beam technologies which use photon in the 0.1 to 200 nm wavelength region. Hard photon has not been used in industry due to the lack of suitable photon sources and optical devices. However, hard photon in this wavelength region is expected to bring about innovations in such areas as ultrafine processing and material synthesis due to its atom selective reaction, inner shell excitation reaction, and spatially high resolution. Then, technological themes and possibility have been surveyed. Although there are principle proposes and their verification of individual technologies for the technologies of hard photon generation, regulation and utilization, they are still far from the practical applications. For the photon source technology, the laser diode pumped driver laser technology, laser plasma photon source technology, synchrotron radiation photon source technology, and vacuum ultraviolet photon source technology are presented. For the optical device technology, the multi-layer film technology for beam mirrors and the non-spherical lens processing technology are introduced. Also are described the reduction lithography technology, hard photon excitation process, and methods of analysis and measurement. 430 refs., 165 figs., 23 tabs.

Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes

CERN Document Server

Boscardin, Maurizio; Bruzzi, Mara; Candelori, Andrea; Focardi, Ettore; Khomenkov, Volodymyr P; Piemonte, Claudio; Ronchin, S; Tosi, C; Zorzi, N

2005-01-01

Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution, and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed PIN diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer backside. Diodes of different shapes and sizes have been fabricated on 50- mu m and 100- mu m thick membranes and tested, showing a low leakage current (of 300 nA/cm/sup 3/) and a very low depletion voltage (in the order of 1 V for the 50 mu m membrane) before irradiation. Radiation damage tests have been performed with 58 MeV lithium (Li) ions up to the fluence of 10/sup 14/ Li/cm/sup 2/ in order to determine the depletion voltage and leakage current density increase after irradiation. Charge collection efficiency tests carried out with a beta /...

Emerging sensor and I and C technologies for nuclear power plants

International Nuclear Information System (INIS)

Korsah, K.; Wood, R. T.; Freer, E.; Antonescu, C.

2006-01-01

This paper presents the findings from a survey of emerging technologies in the field of instrumentation and controls (I and C). The survey findings give an overview of the state-of-the-art in selected technology focus areas for industrial, research, or scientific applications that are relevant to nuclear power plant I and C systems, and discuss potential regulatory impact for safety-related applications. Four technology focus areas are selected for review: Sensors and Measurement Systems; Radiation Hardness of Microprocessors and other Integrated Circuits; Diagnostics and Prognostics Systems; and High-Integrity Software. It is concluded that, while there have been considerable advances in digital I and C hardware, advances in software engineering have not kept pace with hardware. The authors anticipate advances in hardware (e.g., more accurate sensors, sophisticated on-line diagnostics, advances in rad-hard electronics) to influence some regulatory revisions (e.g., surveillance requirements, margins, calibration intervals). However, the state-of-the-art in software engineering has not advanced enough to warrant significant changes in the current position in software review requirements. (authors)

Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

Energy Technology Data Exchange (ETDEWEB)

Beimforde, Michael

2010-07-19

To extend the discovery potential of the experiments at the LHC accelerator a two phase luminosity upgrade towards the super LHC (sLHC) with a maximum instantaneous luminosity of 10{sup 35}/cm{sup 2}s{sup 1} is planned. Retaining the reconstruction efficiency and spatial resolution of the ATLAS tracking detector at the sLHC, new pixel modules have to be developed that have a higher granularity, can be placed closer to the interaction point, and allow for a cost-efficient coverage of a larger pixel detector volume compared to the present one. The reduced distance to the interaction point calls for more compact modules that have to be radiation hard to supply a sufficient charge collection efficiency up to an integrated particle fluence equivalent to that of (1-2).10{sup 16} 1-MeV-neutrons per square centimeter (n{sub eq}/cm{sup 2}). Within this thesis a new module concept was partially realised and evaluated for the operation within an ATLAS pixel detector at the sLHC. This module concept utilizes a novel thin sensor production process for thin n-in-p silicon sensors which potentially allow for a higher radiation hardness at a reduced cost. Furthermore, the new 3D-integration technology ICV-SLID is explored which will allow for increasing the active area of the modules from 71% to about 90% and hence, for employing the modules in the innermost layer of the upgraded ATLAS pixel detector. A semiconductor simulation and measurements of irradiated test sensors are used to optimize the implantation parameters for the inter-pixel isolation of the thin sensors. These reduce the crosstalk between the pixel channels and should allow for operating the sensors during the whole runtime of the experiment without causing junction breakdowns. The characterization of the first production of sensors with active thicknesses of 75 {mu}m and 150 {mu}m proved that thin pixel sensors can be successfully produced with the new process technology. Thin pad sensors with a reduced inactive

Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

International Nuclear Information System (INIS)

Beimforde, Michael

2010-01-01

To extend the discovery potential of the experiments at the LHC accelerator a two phase luminosity upgrade towards the super LHC (sLHC) with a maximum instantaneous luminosity of 10 35 /cm 2 s 1 is planned. Retaining the reconstruction efficiency and spatial resolution of the ATLAS tracking detector at the sLHC, new pixel modules have to be developed that have a higher granularity, can be placed closer to the interaction point, and allow for a cost-efficient coverage of a larger pixel detector volume compared to the present one. The reduced distance to the interaction point calls for more compact modules that have to be radiation hard to supply a sufficient charge collection efficiency up to an integrated particle fluence equivalent to that of (1-2).10 16 1-MeV-neutrons per square centimeter (n eq /cm 2 ). Within this thesis a new module concept was partially realised and evaluated for the operation within an ATLAS pixel detector at the sLHC. This module concept utilizes a novel thin sensor production process for thin n-in-p silicon sensors which potentially allow for a higher radiation hardness at a reduced cost. Furthermore, the new 3D-integration technology ICV-SLID is explored which will allow for increasing the active area of the modules from 71% to about 90% and hence, for employing the modules in the innermost layer of the upgraded ATLAS pixel detector. A semiconductor simulation and measurements of irradiated test sensors are used to optimize the implantation parameters for the inter-pixel isolation of the thin sensors. These reduce the crosstalk between the pixel channels and should allow for operating the sensors during the whole runtime of the experiment without causing junction breakdowns. The characterization of the first production of sensors with active thicknesses of 75 μm and 150 μm proved that thin pixel sensors can be successfully produced with the new process technology. Thin pad sensors with a reduced inactive edge demonstrate that the active

Time-resolved hard x-ray studies using third-generation synchrotron radiation sources (abstract)

International Nuclear Information System (INIS)

Mills, D.M.

1992-01-01

The third-generation, high-brilliance, synchrotron radiation sources currently under construction will usher in a new era of x-ray research in the physical, chemical, and biological sciences. One of the most exciting areas of experimentation will be the extension of static x-ray scattering and diffraction techniques to the study of transient or time-evolving systems. The high repetition rate, short-pulse duration, high-brilliance, variable spectral bandwidth, and large particle beam energies of these sources make them ideal for hard x-ray, time-resolved studies. The primary focus of this presentation will be on the novel instrumentation required for time-resolved studies such as optics which can increase the flux on the sample or disperse the x-ray beam, detectors and electronics for parallel data collection, and methods for altering the natural time structure of the radiation. This work is supported by the U.S. Department of Energy, BES-Materials Science, under Contract No. W-31-109-ENG-38

Radiation area monitor device and method

Science.gov (United States)

Vencelj, Matjaz; Stowe, Ashley C.; Petrovic, Toni; Morrell, Jonathan S.; Kosicek, Andrej

2018-01-30

A radiation area monitor device/method, utilizing: a radiation sensor; a rotating radiation shield disposed about the radiation sensor, wherein the rotating radiation shield defines one or more ports that are transparent to radiation; and a processor operable for analyzing and storing a radiation fingerprint acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor. Optionally, the radiation sensor includes a gamma and/or neutron radiation sensor. The device/method selectively operates in: a first supervised mode during which a baseline radiation fingerprint is acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor; and a second unsupervised mode during which a subsequent radiation fingerprint is acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor, wherein the subsequent radiation fingerprint is compared to the baseline radiation fingerprint and, if a predetermined difference threshold is exceeded, an alert is issued.

A 0.18μm CMOS low-power radiation sensor for UWB wireless transmission

International Nuclear Information System (INIS)

Crepaldi, M; Demarchi, D; Gabrielli, A; Khan, A; Pikhay, E; Roizin, Y; Villani, G; Zhang, Z

2012-01-01

The paper describes the design of a floating gate MOS sensor embedded in a readout CMOS element, used as a radiation monitor. A maximum sensitivity of 1 mV/rad is estimated within an absorbed dose range from 1 to 10 krad. The paper shows in particular the design of a microelectronic circuit that includes the floating gate sensor, an oscillator, a modulator, a transmitter and an integrated antenna. A prototype of the circuit has recently been simulated, fabricated and tested exploiting a commercial 180 nm, 4 metal CMOS technology. Some simulation results are presented along with a measurement of the readout circuit response to an input voltage swing. Given the small estimated area of the complete chip prototype, that is less than 1 mm 2 , the chip fits a large variety of applications, from spot radiation monitoring systems in medicine to punctual measurements or radiation level in High-Energy Physics experiments.

Standard hardness conversion tables for metals relationship among brinell hardness, vickers hardness, rockwell hardness, superficial hardness, knoop hardness, and scleroscope hardness

CERN Document Server

American Society for Testing and Materials. Philadelphia

2007-01-01

1.1 Conversion Table 1 presents data in the Rockwell C hardness range on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, Knoop hardness, and Scleroscope hardness of non-austenitic steels including carbon, alloy, and tool steels in the as-forged, annealed, normalized, and quenched and tempered conditions provided that they are homogeneous. 1.2 Conversion Table 2 presents data in the Rockwell B hardness range on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, Knoop hardness, and Scleroscope hardness of non-austenitic steels including carbon, alloy, and tool steels in the as-forged, annealed, normalized, and quenched and tempered conditions provided that they are homogeneous. 1.3 Conversion Table 3 presents data on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, and Knoop hardness of nickel and high-nickel alloys (nickel content o...

Hybrid emergency radiation detection: a wireless sensor network application for consequence management of a radiological release

Science.gov (United States)

Kyker, Ronald D.; Berry, Nina; Stark, Doug; Nachtigal, Noel; Kershaw, Chris

2004-08-01

The Hybrid Emergency Radiation Detection (HERD) system is a rapidly deployable ad-hoc wireless sensor network for monitoring the radiation hazard associated with a radiation release. The system is designed for low power, small size, low cost, and rapid deployment in order to provide early notification and minimize exposure. The many design tradeoffs, decisions, and challenges in the implementation of this wireless sensor network design will be presented and compared to the commercial systems available. Our research in a scaleable modular architectural highlights the need and implementation of a system level approach that provides flexibility and adaptability for a variety of applications. This approach seeks to minimize power, provide mission specific specialization, and provide the capability to upgrade the system with the most recent technology advancements by encapsulation and modularity. The implementation of a low power, widely available Real Time Operating System (RTOS) for multitasking with an improvement in code maintenance, portability, and reuse will be presented. Finally future design enhancements technology trends affecting wireless sensor networks will be presented.

Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

Energy Technology Data Exchange (ETDEWEB)

Bomben, M., E-mail: marco.bomben@cern.ch [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Bagolini, A.; Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); Bosisio, L. [Università di Trieste, Dipartimento di Fisica and INFN, Trieste (Italy); Calderini, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Università di Pisa, Pisa (Italy); INFN Sez. di Pisa, Pisa (Italy); Chauveau, J. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Université de Genève, Genève (Switzerland); Marchiori, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy)

2013-12-01

In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

International Nuclear Information System (INIS)

Bomben, M.; Bagolini, A.; Boscardin, M.; Bosisio, L.; Calderini, G.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchiori, G.; Zorzi, N.

2013-01-01

In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown

UV Radiation Detection Using Optical Sensor Based on Eu3+ Doped PMMA

Directory of Open Access Journals (Sweden)

Miluski Piotr

2016-12-01

Full Text Available Progress in UV treatment applications requires new compact and sensor constructions. In the paper a hybrid (organic-inorganic rare-earth-based polymeric UV sensor construction is proposed. The efficient luminescence of poly(methyl methacrylate (PMMA matrix doped by europium was used for testing the optical sensor (optrode construction. The europium complex assures effective luminescence in the visible range with well determined multi-peak spectrum emission enabling construction of the optrode. The fabricated UV optical fibre sensor was used for determination of Nd:YAG laser intensity measurements at the third harmonic (355 nm in the radiation power range 5.0-34.0 mW. The multi-peak luminescence spectrum was used for optimization of the measurement formula. The composition of luminescent peak intensity enables to increase the slope of sensitivity up to −2.8 mW-1. The obtained results and advantages of the optical fibre construction enable to apply it in numerous UV detection systems.

Wireless sensor communications and internet connectivity for sensor networks

Energy Technology Data Exchange (ETDEWEB)

Dunbar, M. [Crossbow Technology, Inc., San Jose, CA (United States)

2001-07-01

A wireless sensor network architecture is an integrated hardware/software solution that has the potential to change the way sensors are used in a virtually unlimited range of industries and applications. By leveraging Bluetooth wireless technology for low-cost, short-range radio links, wireless sensor networks such as CrossNet{sup TM} enable users to create wireless sensor networks. These wireless networks can link dozens or hundreds of sensors of disparate types and brands with data acquisition/analysis systems, such as handheld devices, internet-enabled laptop or desktop PCs. The overwhelming majority of sensor applications are hard-wired at present, and since wiring is often the most time-consuming, tedious, trouble-prone and expensive aspect of sensor applications, users in many fields will find compelling reasons to adopt the wireless sensor network solution. (orig.)

Fiber Bragg Grating sensors for deformation monitoring of GEM foils in HEP detectors

CERN Document Server

AUTHOR|(CDS)2071648; Bianco, S; Caponero, M; Muhammad, S; Passamonti, L; Piccolo, D; Pierluigi, D; Raffone, G; Russo, A; Saviano, G

2015-01-01

Fiber Bragg Grating (FBG) sensors have been so far mainly used in high energy physics (HEP) as high precision positioning and re-positioning sensors and as low cost, easy to mount, radiation hard and low space- consuming temperature and humidity devices. FBGs are also commonly used for very precise strain measurements. In this work we present a novel use of FBGs as flatness and mechanical tensioning sensors applied to the wide Gas Electron Multiplier (GEM) foils of the GE1/1 chambers of the Compact Muon Solenoid (CMS) experiment at Large Hadron Collider (LHC) of CERN. A network of FBG sensors has been used to determine the optimal mechanical tension applied and to characterize the mechanical stress applied to the foils. The preliminary results of the test performed on a full size GE1/1 final prototype and possible future developments will be discussed.

Cryogenic and radiation hard ASIC design for large format NIR/SWIR detector

Science.gov (United States)

Gao, Peng; Dupont, Benoit; Dierickx, Bart; Müller, Eric; Verbruggen, Geert; Gielis, Stijn; Valvekens, Ramses

2014-10-01

An ASIC is developed to control and data quantization for large format NIR/SWIR detector arrays. Both cryogenic and space radiation environment issue are considered during the design. Therefore it can be integrated in the cryogenic chamber, which reduces significantly the vast amount of long wires going in and out the cryogenic chamber, i.e. benefits EMI and noise concerns, as well as the power consumption of cooling system and interfacing circuits. In this paper, we will describe the development of this prototype ASIC for image sensor driving and signal processing as well as the testing in both room and cryogenic temperature.

Radiation dosimetry properties of smart-phone CMOS sensors

International Nuclear Information System (INIS)

Van Hoey, Olivier; Salavrakos, Alexia; Marques, Antonio; Nagao, Alexandre; Vanhavere, Filip; Cauwels, Vanessa; Nascimento, Luana F.; Willems, Ruben

2016-01-01

During the past years, several smart-phone applications have been developed for radiation detection. These applications measure radiation using the smart-phone camera complementary metal-oxide-semiconductor sensor. They are potentially useful for data collection and personal dose assessment in case of a radiological incident. However, it is important to assess these applications. Six applications were tested by means of irradiations with calibrated X-ray and gamma sources. It was shown that the measurement stabilises only after at least 10-25 min. All applications exhibited a flat dose rate response in the studied ambient dose equivalent range from 2 to 1000 μSv h -1 . Most applications significantly over- or underestimate the dose rate or are not calibrated in terms of dose rate. A considerable energy dependence was observed below 100 keV but not for the higher energy range more relevant for incident scenarios. Photon impact angle variation gave a measured signal variation of only about 10 %. (authors)

Device Simulation of Monolithic Active Pixel Sensors: Radiation Damage Effects

International Nuclear Information System (INIS)

Fourches, N.T.

2009-01-01

Vertexing for the future International Linear Collider represents a challenging goal because of the high spatial resolution required with low material budget and high ionizing radiation tolerance. CMOS Monolithic Active Pixel Sensors (MAPS) represent a good potential solution for this purpose. Up to now many MAPS sensors have been developed. They are based on various architectures and manufactured in different processes. However, up so far, the sensor diode has not been the subject of extensive modelization and simulation. Published simulation studies of sensor-signal formation have been less numerous than measurements on real sensors. This is a cause for concern because such sensor is physically based on the partially depleted diode, in the vicinity of which the electric field collects the minority carriers generated by an incident MIP (minimum ionizing particle). Although the microscopic mechanisms are well known and modelled, the global physical mechanisms for signal formation are not very rigorously established. This is partly due to the presence of a predominant diffusion component in the charge transport. We present here simulations mainly based on the S-PISCES code, in which physical mechanisms affecting transport are taken into account. Diffusion, influence of residual carrier concentration due to the doping level in the sensitive volume, and more importantly charge trapping due to deep levels in the active (detecting) layer are studied together with geometric aspects. The effect of neutron irradiation is studied to assess the effects of deep traps. A comparison with available experimental data, obtained on processed MAPS before or after neutron irradiation will be introduced. Simulated reconstruction of the Minimum Ionizing Particle (MIP) point of impact in two dimensions is also investigated. For further steps, guidelines for process choices of next Monolithic Active Pixel Sensors are introduced. (authors)

Sensor R&D for the CMS Tracker Upgrade for the HL-LHC

CERN Document Server

Behnamian, Hadi

2014-01-01

At an instantaneous luminosity of $5\\times 10^{34} cm^{-2} s^{-1}$, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of 3000 $fb^{-1}$ of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation environment of the tracking system will be severe, requiring new radiation hard sensors for the CMS tracker. The CMS tracker collaboration has almost completed a large material investigation and irradiation campaign to identify the silicon material and design that fulfills all requirements of a new tracking detector at HL-LHC. Focusing on the upgrade of the outer tracker region, pad diodes as well as fully functional strip sensors have been implemented on silicon wafers with different material properties and thicknesses. The samples were irradiated with a mixture of neutrons and protons corresponding to fluences as expected for various positions in the future tracker. The measurements performed on the structures inc...

Development of radiation-hard electric connector with ball bearing for in-vessel remote maintenance equipment of ITER

International Nuclear Information System (INIS)

Ito, Akira; Obara, Kenjiro; Tada, Eisuke; Morita, Yousuke; Yagi, Toshiaki; Iida, Kazuhisa; Sato, Masaru.

1997-12-01

Development of radiation-hard electric connector with ball bearing for in-vessel remote maintenance equipment of ITER (International Thermonuclear Experimental Reactor) has been conducted. Since the in-vessel remote maintenance equipment is operated under the condition of 10 6 R/h gamma ray dose rate, the electric connector has to be radiation hard for an accumulation dose of 10 10 R. In addition, the simple attachment/removal mechanism is essential for remote operation. For this, the alumina (Al203) ceramics and a ball bearing were adopted to electric insulator and plug (male) of connector, respectively. The handling tests on attachment/removal of the connector were conducted by using master slave manipulator and general purpose robot with handling tool, and as a result, the validity of the attachment/removal mechanism was verified. In the gamma ray irradiation tests, which are under way, no degradation in break down voltage (1000V 1min.) up to 10 10 R was confirmed. However insulation resistance and contact resistance between contact pin and contact socket were deteriorated in proportion to the accumulation dose. Increase of contact resistance is considered due to an erosion of contact pin. (author)

Radiation hard silicon microstrip detectors for use in ATLAS at CERN

Energy Technology Data Exchange (ETDEWEB)

Johansen, Lars Gimmestad

2005-07-01

The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

Radiation hard silicon microstrip detectors for use in ATLAS at CERN

International Nuclear Information System (INIS)

Johansen, Lars Gimmestad

2005-06-01

The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

Thermal microphotonic sensor and sensor array

Science.gov (United States)

Watts, Michael R [Albuquerque, NM; Shaw, Michael J [Tijeras, NM; Nielson, Gregory N [Albuquerque, NM; Lentine, Anthony L [Albuquerque, NM

2010-02-23

A thermal microphotonic sensor is disclosed for detecting infrared radiation using heat generated by the infrared radiation to shift the resonant frequency of an optical resonator (e.g. a ring resonator) to which the heat is coupled. The shift in the resonant frequency can be determined from light in an optical waveguide which is evanescently coupled to the optical resonator. An infrared absorber can be provided on the optical waveguide either as a coating or as a plate to aid in absorption of the infrared radiation. In some cases, a vertical resonant cavity can be formed about the infrared absorber to further increase the absorption of the infrared radiation. The sensor can be formed as a single device, or as an array for imaging the infrared radiation.

Upconversion detector for methane atmospheric sensor

DEFF Research Database (Denmark)

Meng, Lichun; Fix, Andreas; Høgstedt, Lasse

2017-01-01

We demonstrate an efficient upconversion detector (UCD) for a methane (CH4) atmospheric sensor. The UCD shows comparable performance with a conventional detector when measuring the backscattered signal from the hard target located 2.3 km away.......We demonstrate an efficient upconversion detector (UCD) for a methane (CH4) atmospheric sensor. The UCD shows comparable performance with a conventional detector when measuring the backscattered signal from the hard target located 2.3 km away....

Development of Bismuth Hall sensors for ITER steady state magnetic diagnostics.

Czech Academy of Sciences Publication Activity Database

Ďuran, Ivan; Entler, Slavomír; Kočan, M.; Kohout, Michal; Viererbl, L.; Mušálek, Radek; Chráska, Tomáš; Vayakis, G.

2017-01-01

Roč. 123, November (2017), s. 690-694 ISSN 0920-3796. [SOFT 2016: Symposium on Fusion Technology /29./. Prague, 05.09.2016-09.09.2016] R&D Projects: GA MŠk LG14002 Institutional support: RVO:61389021 ; RVO:68378271 Keywords : ITER * Magnetic diagnostic * Hall sensor * Bismuth * Neutron irradiation * Radiation hardness Subject RIV: JF - Nuclear Energetics; JF - Nuclear Energetics (FZU-D) OBOR OECD: Nuclear related engineering; Nuclear related engineering (FZU-D) Impact factor: 1.319, year: 2016 http://www.sciencedirect.com/science/article/pii/S0920379617306956

Development, optimisation and characterisation of a radiation hard mixed-signal readout chip for LHCb

Energy Technology Data Exchange (ETDEWEB)

Loechner, S.

2006-07-26

The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4us. The 128 analogue channels are multiplexed and transmitted off chip in 900ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU) test were performed. A long-time measurement with a silicon strip detector was also part of this work as well as the development and test of a first mass production test setup. The Beetle chip showed no functional failure and only slight degradation in the analogue performance under irradiation of up to 130Mrad total dose. The Beetle chip fulfils all requirements of the vertex detector (VELO), the trigger tracker (TT) and the inner tracker (IT) and is ready for the start of LHCb end of 2007. (orig.)

Development, optimisation and characterisation of a radiation hard mixed-signal readout chip for LHCb

International Nuclear Information System (INIS)

Loechner, S.

2006-01-01

The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4us. The 128 analogue channels are multiplexed and transmitted off chip in 900ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU) test were performed. A long-time measurement with a silicon strip detector was also part of this work as well as the development and test of a first mass production test setup. The Beetle chip showed no functional failure and only slight degradation in the analogue performance under irradiation of up to 130Mrad total dose. The Beetle chip fulfils all requirements of the vertex detector (VELO), the trigger tracker (TT) and the inner tracker (IT) and is ready for the start of LHCb end of 2007. (orig.)

Conceptual design of a versatile radiation tolerant integrated signal conditioning circuit for resistive sensors

Energy Technology Data Exchange (ETDEWEB)

Leroux, P. [Katholieke Hogeschool Kempen, Kleinhoefstraat 4, B-2440 Geel (Belgium); Katholieke Universiteit Leuven, Dept. ESAT-MICAS, Kasteelpark Arenberg 10, B-3001 Heverlee (Belgium); SCK-CEN, Belgian Nuclear Research Centre, Boeretang 200, B-2400 Mol (Belgium); Sterckx, J. [Katholieke Hogeschool Kempen, Kleinhoefstraat 4, B-2440 Geel (Belgium); Van Uffelen, M.; Damiani, C. [Fusion 4 Energy, Ed. B3, c/Josep, no 2, Torres Diagonal Litoral, 08019 Barcelona (Spain)

2011-07-01

This paper presents the design of a radiation tolerant configurable discrete time CMOS signal conditioning circuit for use with resistive sensors like strain gauge pressure sensors. The circuit is intended to be used for remote handling in harsh environments in the International Thermonuclear Experimental fusion Reactor (ITER). The design features a 5 V differential preamplifier using a Correlated Double Sampling (CDS) architecture at a sample rate of 20 kHz and a 24 V discrete time post amplifier. The gain is digitally controllable between 27 and 400 in the preamplifier and between 1 and 8 in the post amplifier. The nominal input referred noise voltage is only 8.5 {mu}V while consuming only 1 mW. The circuit has a simulated radiation tolerance of more than 1 MGy. (authors)

LePIX: First results from a novel monolithic pixel sensor

International Nuclear Information System (INIS)

Mattiazzo, S.; Battaglia, M.; Bisello, D.; Caselle, M.; Chalmet, P.; Demaria, N.; Giubilato, P.; Ikemoto, Y.; Kloukinas, K.; Mansuy, C.; Marchioro, A.; Mugnier, H.; Pantano, D.; Potenza, A.; Rivetti, A.; Rousset, J.; Silvestrin, L.; Snoeys, W.; Wyss, J.

2013-01-01

We present a monolithic pixel sensor developed in the framework of the LePIX project aimed at tracking/triggering tasks where high granularity, low power consumption, material budget, radiation hardness and production costs are a concern. The detector is built in a 90 nm CMOS process on a substrate of moderate resistivity. This maintains the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, but offers charge collection by drift from a depleted region and therefore an excellent signal to noise ratio and a radiation tolerance superior to conventional undepleted MAPS. Measurement results obtained with the first prototypes from laser, radioactive source and beam test experiments are described. The excellent signal-to-noise performance is demonstrated by the capability of the device to separate the peaks in the spectrum of a 55 Fe source. We will also highlight the interaction between pixel cell design and architecture which points toward a very precise direction in the development of such depleted monolithic pixel devices for high energy physics

A first-principles approach to total-dose hardness assurance

International Nuclear Information System (INIS)

Fleetwood, D.M.

1995-01-01

A first-principles approach to radiation hardness assurance was described that provides the technical background to the present US and European total-dose radiation hardness assurance test methods for MOS technologies, TM 1019.4 and BS 22900. These test methods could not have been developed otherwise, as their existence depends not on a wealth of empirical comparisons of IC data from ground and space testing, but on a fundamental understanding of MOS defect growth and annealing processes. Rebound testing should become less of a problem for advanced MOS small-signal electronics technologies for systems with total dose requirements below 50--100 krad(SiO 2 ) because of trends toward much thinner gate oxides. For older technologies with thicker gate oxides and for power devices, rebound testing is unavoidable without detailed characterization studies to assess the impact of interface traps on devices response in space. The QML approach is promising for future hardened technologies. A sufficient understanding of process effects on radiation hardness has been developed that should be able to reduce testing costs in the future for hardened parts. Finally, it is hoped that the above discussions have demonstrated that the foundation for cost-effective hardness assurance tests is laid with studies of the basic mechanisms of radiation effects. Without a diligent assessment of new radiation effects mechanisms in future technologies, one cannot be assured that the present generation of radiation test standards will continue to apply

Radiation effects on active pixel sensors (APS); Effets de l'irradiation sur les capteurs a pixels actifs (APS)

Energy Technology Data Exchange (ETDEWEB)

Cohen, M; David, J P [ONERA-CERT/, 31 - Toulouse (France)

1999-07-01

Active pixel sensor (APS) is a new generation of image sensors which presents several advantages relatively to charge coupled devices (CCDs) particularly for space applications (APS requires only 1 voltage to operate which reduces considerably current consumption). Irradiation was performed using {sup 60}Co gamma radiation at room temperature and at a dose rate of 150 Gy(Si)/h. 2 types of APS have been tested: photodiode-APS and photoMOS-APS. The results show that photoMOS-APS is more sensitive to radiation effects than photodiode-APS. Important parameters of image sensors like dark currents increase sharply with dose levels. Nevertheless photodiode-APS sensitivity is one hundred time lower than photoMOS-APS sensitivity.

SU-E-T-258: Development of a New Patient Set-Up Monitoring System Using Force Sensing Resistor (FSR) Sensor for the Radiation Therapy

International Nuclear Information System (INIS)

Cho, M; Kim, T; Kang, S; Kim, D; Kim, K; Shin, D; Suh, T

2015-01-01

Purpose: The purpose of this work is to develop a new patient set-up monitoring system using force sensing resistor (FSR) sensors that can confirm pressure of contact surface and evaluate its feasibility. Methods: In this study, we focused on develop the patient set-up monitoring system to compensate for the limitation of existing optical based monitoring system, so the developed system can inform motion in the radiation therapy. The set-up monitoring system was designed consisting of sensor units (FSR sensor), signal conditioning devices (USB cable/interface electronics), a control PC, and a developed analysis software. The sensor unit was made by attaching FSR sensor and dispersing pressure sponge to prevent error which is caused by concentrating specific point. Measured signal from the FSR sensor was sampled to arduino mega 2560 microcontroller, transferred to control PC by using serial communication. The measured data went through normalization process. The normalized data was displayed through the developed graphic user interface (GUI) software. The software was designed to display a single sensor unit intensity (maximum 16 sensors) and display 2D pressure distribution (using 16 sensors) according to the purpose. Results: Changes of pressure value according to motion was confirmed by the developed set-up monitoring system. Very small movement such as little physical change in appearance can be confirmed using a single unit and using 2D pressure distribution. Also, the set-up monitoring system can observe in real time. Conclusion: In this study, we developed the new set-up monitoring system using FSR sensor. Especially, we expect that the new set-up monitoring system is suitable for motion monitoring of blind area that is hard to confirm existing optical system and compensate existing optical based monitoring system. As a further study, an integrated system will be constructed through correlation of existing optical monitoring system. This work was supported by

SU-E-T-258: Development of a New Patient Set-Up Monitoring System Using Force Sensing Resistor (FSR) Sensor for the Radiation Therapy

Energy Technology Data Exchange (ETDEWEB)

Cho, M; Kim, T; Kang, S; Kim, D; Kim, K; Shin, D; Suh, T [The Catholic University of Korea College of Medicine, Seoul (Korea, Republic of)

2015-06-15

Purpose: The purpose of this work is to develop a new patient set-up monitoring system using force sensing resistor (FSR) sensors that can confirm pressure of contact surface and evaluate its feasibility. Methods: In this study, we focused on develop the patient set-up monitoring system to compensate for the limitation of existing optical based monitoring system, so the developed system can inform motion in the radiation therapy. The set-up monitoring system was designed consisting of sensor units (FSR sensor), signal conditioning devices (USB cable/interface electronics), a control PC, and a developed analysis software. The sensor unit was made by attaching FSR sensor and dispersing pressure sponge to prevent error which is caused by concentrating specific point. Measured signal from the FSR sensor was sampled to arduino mega 2560 microcontroller, transferred to control PC by using serial communication. The measured data went through normalization process. The normalized data was displayed through the developed graphic user interface (GUI) software. The software was designed to display a single sensor unit intensity (maximum 16 sensors) and display 2D pressure distribution (using 16 sensors) according to the purpose. Results: Changes of pressure value according to motion was confirmed by the developed set-up monitoring system. Very small movement such as little physical change in appearance can be confirmed using a single unit and using 2D pressure distribution. Also, the set-up monitoring system can observe in real time. Conclusion: In this study, we developed the new set-up monitoring system using FSR sensor. Especially, we expect that the new set-up monitoring system is suitable for motion monitoring of blind area that is hard to confirm existing optical system and compensate existing optical based monitoring system. As a further study, an integrated system will be constructed through correlation of existing optical monitoring system. This work was supported by

A nonlinear support vector machine model with hard penalty function based on glowworm swarm optimization for forecasting daily global solar radiation

International Nuclear Information System (INIS)

Jiang, He; Dong, Yao

2016-01-01

Highlights: • Eclat data mining algorithm is used to determine the possible predictors. • Support vector machine is converted into a ridge regularization problem. • Hard penalty selects the number of radial basis functions to simply the structure. • Glowworm swarm optimization is utilized to determine the optimal parameters. - Abstract: For a portion of the power which is generated by grid connected photovoltaic installations, an effective solar irradiation forecasting approach must be crucial to ensure the quality and the security of power grid. This paper develops and investigates a novel model to forecast 30 daily global solar radiation at four given locations of the United States. Eclat data mining algorithm is first presented to discover association rules between solar radiation and several meteorological factors laying a theoretical foundation for these correlative factors as input vectors. An effective and innovative intelligent optimization model based on nonlinear support vector machine and hard penalty function is proposed to forecast solar radiation by converting support vector machine into a regularization problem with ridge penalty, adding a hard penalty function to select the number of radial basis functions, and using glowworm swarm optimization algorithm to determine the optimal parameters of the model. In order to illustrate our validity of the proposed method, the datasets at four sites of the United States are split to into training data and test data, separately. The experiment results reveal that the proposed model delivers the best forecasting performances comparing with other competitors.

E-Beam Effects on CMOS Active Pixel Sensors

International Nuclear Information System (INIS)

Kang, Dong Ook; Jo, Gyu Seong; Kim, Hyeon Daek; Kim, Hyunk Taek; Kim, Jong Yeol; Kim, Chan Kyu

2011-01-01

Three different CMOS active pixel structures manufactured in a deep submicron process have been evaluated with electron beam. The devices were exposed to 1 MeV electron beam up to 5kGy. Dark current increased after E-beam irradiation differently at each pixel structure. Dark current change is dependent on CMOS pixel structures. CMOS image sensors are now good candidates in demanding applications such as medical image sensor, particle detection and space remote sensing. In these situations, CISs are exposed to high doses of radiation. In fact radiation is known to generate trapped charge in CMOS oxides. It can lead to threshold voltage shifts and current leakages in MOSFETs and dark current increase in photodiodes. We studied ionizing effects in three types of CMOS APSs fabricated by 0.25 CMOS process. The devices were irradiated by a Co 60 source up to 50kGy. All irradiation took place at room temperature. The dark current in the three different pixels exhibits increase with electron beam exposure. From the above figure, the change of dark current is dependent on the pixel structure. Double junction structure has shown relatively small increase of dark current after electron beam irradiation. The dark current in the three different pixels exhibits increase with electron beam exposure. The contribution of the total ionizing dose to the dark current increase is small here, since the devices were left unbiased during the electron beam irradiation. Radiation hardness in dependent on the pixel structures. Pixel2 is relatively vulnerable to radiation exposure. Pixel3 has radiation hardened structure

Study and characterization of an integrated circuit-deposited hydrogenated amorphous silicon sensor for the detection of particles and radiations

International Nuclear Information System (INIS)

Despeisse, M.

2006-03-01

Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor-chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application. (author)

Microfabricated electrochemical sensor for the detection of radiation-induced DNA damage

Energy Technology Data Exchange (ETDEWEB)

Wang, J.; Rivas, G.; Ozsoz, M.; Grant, D.H.; Cai, X.; Parrado, C. [New Mexico State Univ., Las Cruces, NM (United States)

1997-04-01

An electrochemical biosensor protocol for the detection of radiation-induced DNA damage is described. The procedure employs a dsDNA-coated screen-printed electrode and relies on changes in the guanine-DNA oxidation signal upon exposure to ultraviolet radiation. The decreased signal is ascribed primarily to conformational changes in the DNA and to the photoconversion of the guanine-DNA moiety to a nonelectroactive monomeric base product. Factors influencing the response of these microfabricated DNA sensors, such as irradiation time, wavelength, and distance, are explored, and future prospects are discussed. Similar results are given for the use of bare strip electrodes in connection with irradiated DNA solutions. 8 refs., 4 figs.

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Ducourthial, Audrey; The ATLAS collaboration

2017-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15} n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside...

Modeling radiation damage to pixel sensors in the ATLAS detector

CERN Document Server

Ducourthial, Audrey; The ATLAS collaboration

2017-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15}n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside ...

Vehicle Fault Diagnose Based on Smart Sensor

Science.gov (United States)

Zhining, Li; Peng, Wang; Jianmin, Mei; Jianwei, Li; Fei, Teng

In the vehicle's traditional fault diagnose system, we usually use a computer system with a A/D card and with many sensors connected to it. The disadvantage of this system is that these sensor can hardly be shared with control system and other systems, there are too many connect lines and the electro magnetic compatibility(EMC) will be affected. In this paper, smart speed sensor, smart acoustic press sensor, smart oil press sensor, smart acceleration sensor and smart order tracking sensor were designed to solve this problem. With the CAN BUS these smart sensors, fault diagnose computer and other computer could be connected together to establish a network system which can monitor and control the vehicle's diesel and other system without any duplicate sensor. The hard and soft ware of the smart sensor system was introduced, the oil press, vibration and acoustic signal are resampled by constant angle increment to eliminate the influence of the rotate speed. After the resample, the signal in every working cycle could be averaged in angle domain and do other analysis like order spectrum.

Edge-TCT measurements on irradiated HV CMOS sensors

CERN Document Server

Weisser, Constantin

2014-01-01

Passive $100 \\times 100 \\,\\mu$m test diodes in an unirradiated and an irradiated HV2FEI4v3 HV-CMOS silicon sensor were analysed using the edge TCT technique. To integrate the sensor into the setup a PCB was designed to extract the signals, a cooling mechanism was constructed and the system housed in a shielding box. The observed signal had fast and slow contributions, that were interpreted as drift and diffusion. The former peaked in a region, that was interpreted as the depletion region, while the latter peaked further in the bulk material. Raising the bias voltage increased the depth of the former region, while pushing the latter region further into the bulk. The irradiated sample lost signal strength mainly in its slow part compared to the unirradiated sample, while its quick signal remained largely unaffected. As only the signal interpreted as drift is fast enough to be useful in LHC operation the investigated sensors could be considered radiation hard for this purpose. This gives further promise to ...

Non-stoichiometry Defects and Radiation Hardness of Lead Tungstate Crystals PbWO4

CERN Document Server

Devitsin, E G; Kozlov, V A; Nefedov, L; Polyansky, E V; Potashov, S Yu; Terkulov, A R; Zadneprovski, B I

2001-01-01

It has been stated many times that the formation of radiation infringements in PbWO4 is to big extent stipulated by non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of non-stoichiometry defects and their effect on the radiation hardness of PbWO4 the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation (137Cs source). In the optical transmission measurements along with traditional techniques a method "in situ" was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO4 melt has found PbWO4 phase in their content as well as compounds rich in lead, PbO, Pb2WO5, with overall ratio Pb/W = 3.2. Correspondingly the lack of lead and variations in th...

The silicon sensors for the Inner Tracker of the Compact Muon Solenoid Experiment

International Nuclear Information System (INIS)

Krammer, M.

2003-01-01

Full text: The Inner Tracker of the Compact Muon Solenoid Experiment, at present under construction, will consist of more than 24000 silicon strip sensors arranged in 10 central concentric layers and 2 X 9 discs at both ends. The total sensitive silicon area will exceed 200 m 2 . The silicon sensors are produced in various thicknesses and geometries. Each sensor has 512 or 768 implanted strips which will allow to measure the position of traversing high energy charged particles. This paper a short overview of the CMS tracker system. Subsequently the design of the silicon sensors is explained with special emphasis on the radiation hardness and on the high voltage stability of the sensors. Two companies share the production of these sensors. The quality of the sensors is extensively checked by several laboratories associated with CMS. Important electrical parameters are measured on the sensors themselves. In addition, dedicated test structures were designed by CMS which allow the monitoring of many parameters sensitive to the production process. By May 2003 about 3000 sensors were delivered and a large fraction of these sensors and tests structures was measured. A summary of these measurements will be given and the main results will be discussed

Radiation hard detectors from silicon enriched with both oxygen and thermal donors improvements in donor removal and long-term stability with regard to neutron irradiation

CERN Document Server

Li, Z; Eremin, V; Dezillie, B; Chen, W; Bruzzi, M

2002-01-01

Detectors made on the silicon wafers with high concentration of thermal donors (TD), which were introduced during the high temperature long time (HTLT) oxygenation procedure, have been investigated in the study of radiation hardness with regard to neutron irradiation and donor removal problems in irradiated high resistivity Si detectors. Two facts have been established as the evidence of radiation hardness improvement of HTLT(TD) Si detectors irradiated below approx 10 sup 1 sup 4 n/cm sup 2 compared to detectors made on standard silicon wafers: the increase of space charge sign inversion fluence (of 1 MeV neutrons) due to lower initial Si resistivity dominated by TD, and the gain in the reverse annealing time constant tau favourable for this material. Coupled with extremely high radiation tolerance to protons observed earlier ('beta zero' behaviour in a wide range of fluence), detectors from HTLT(TD) Si may be unique for application in the experiments with multiple radiations. The changes in the effective sp...

Decision feedback equalization for radiation hard data link at 5 Gbps

International Nuclear Information System (INIS)

Wallängen, V.; Garcia-Sciveres, M.

2017-01-01

The increased particle collision rate following the upgrade of the Large Hadron Collider (LHC) to an increased luminosity requires an increased readout data speed, especially for the ATLAS pixel detector, located closest to the particle interaction point. For this reason, during the Phase-II upgrade of the ATLAS experiment the output data speed of the pixel front-end chips will be increased from 160 Mbps to 5 Gbps. The increased radiation levels will require a radiation hard data transmission link to be designed to carry this data from the pixel front-end to the off-detector system where it will undergo optical conversion. We propose a receiver utilizing the concept of Decision Feedback Equalization (DFE) to be used in this link, where the number of filter taps can be determined from simulations using S-parameter data from measurements of various customized cable prototypes under characterization as candidates to function as transmission medium between the on-chip data driver and the receiver of the link. A dedicated framework has been set up in Matlab to analyze the S-parameter characteristics for the various cable prototypes and investigate the possibilities for signal recovery and maintained signal integrity using DFE, as well as pre-emphasis and different encoding schemes. The simulation results indicate that DFE could be an excellent choice for expanding the system bandwidth to reach required data speeds with minimal signal distortion.

Studies of adhesives and metal contacts on silicon strip sensors for the ATLAS Inner Tracker

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00407830; Moenig, Klaus

2018-04-04

This thesis presents studies investigating the use of adhesives on the active area of silicon strip sensors for the construction of silicon strip detector modules for the ATLAS Phase-II Upgrade. 60 ATLAS07 miniature sensors were tested using three UV cure glues in comparison with the current baseline glue (a non-conductive epoxy). The impact of irradiation on the chemical composition of all adhesives under investigation was studied using three standard methods for chemical analysis: quadrupole time-of-flight mass spectroscopy, gel permeability chromatography and gas chromatography combined with mass spectrometry (GC-MS). GC-MS analyses of glue sample extracts before and after irradiation showed molecule cross-linking and broken chemical bonds to different extents and allowed to quantify the radiation hardness of the adhesives under investigation. Probe station measurements were used to investigate electrical characteristics of sensors partially covered with adhesives in comparison with sensors without adhesiv...

Water quality sensor

International Nuclear Information System (INIS)

Ishizuka, Keiko; Takahashi, Masanori; Watanabe, Atsushi; Ibe, Hidefumi.

1994-01-01

The sensor of the present invention can directly measure oxygen/hydrogen peroxide concentrations in reactor water under radiation irradiation condition, and it has a long life time. Namely, an oxygen sensor comprises electrodes attached on both sides of high temperature/radiation resistant ion conductive material in which ions are sufficiently diffused within a temperature range of from a room temperature to 300degC. It has a performance for measuring electromotive force caused by the difference of a partial pressure between a reference gas and a gas to be measured contained in the high temperature/radiation resistant material. A hydrogen peroxide sensor has the oxygen sensor described above, to which a filter for causing decomposition of hydrogen peroxide is attached. The sensor of the present invention can directly measure oxygen/hydrogen peroxide concentrations in a reactor water of a BWR type reactor under high temperature/radiation irradiation condition. Accordingly, accurate water quality environment in the reactor water can be recognized. As a result, determination of incore corrosion environment is established thereby enabling to attain reactor integrity, safety and long life. (I.S.)

Beta particle detection efficiency of the radiation sensor made from a mixture of polyaniline and titanium oxide

International Nuclear Information System (INIS)

Tamura, M.; Miyata, H.; Katsumata, M.; Matsuda, K.; Ueno, T.; Ito, D.; Suzuki, T.

2016-01-01

We developed a new real-time radiation sensor using an organic semiconductor and measured its β-particle detection sensitivity. This sensor is fabricated by simply combining a p-type semiconductor, polyaniline (Pani), with an n-type semiconductor, TiO_2, and processing the compound. Since Pani and TiO_2 are both inexpensive materials, the sensor can be fabricated at a lower cost than inorganic semiconductor sensors. The signal of each fabricated sensor was measured by a charge sensitive ADC for the irradiation of β-particles. The response signal data of the ADC for each irradiation was measured to calculate the detection efficiency of the detector. The maximum detection efficiency measured as β-particle sensitivity of the sensor was 1%. This β-particle sensitivity is higher than that reported of Pani sensors in the past.

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Nachman, Benjamin Philip; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of $10^{15}$ 1 MeV $n_\\mathrm{eq}/\\mathrm{cm}^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This talk presents a digitization model that includes radiation damage effects to the ATLAS Pixel sensors for the first time. After a thorough description of the setup, predictions for basic Pixel cluster properties are presented alongside first validation studies with Run 2 collision data.

The use of antenna radiation pattern in node localisation algorithms for wireless sensor networks

CSIR Research Space (South Africa)

Mwila, MK

2014-08-01

Full Text Available due to the limited accuracy inherent to the current ranging model. These models, however, make the assumption that the antenna radiation pattern is omnidirectional targeted to simplifying the complexity of the algorithms. An increasing number of sensor...

Radiation hardness and precision timing study of silicon detectors for the CMS High Granularity Calorimeter (HGC)

Energy Technology Data Exchange (ETDEWEB)

Currás, Esteban, E-mail: ecurrasr@cern.ch [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Fernández, Marcos [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Gallrapp, Christian [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Gray, Lindsey [Fermilab, Wilson Street and Kirk Road, Batavia, IL 60510-5011, Illinois (United States); Mannelli, Marcello [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Meridiani, Paolo [Istituto Nazionale Di Fisica Nucleare – Sezione di Roma, Piazzale Aldo Moro, 2, 00185 Roma (Italy); Moll, Michael [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Nourbakhsh, Shervin [University of Minnesota, Minneapolis, MN 55455 (United States); Scharf, Christian [Hamburg University, Notkestraße 85, 22607 Hamburg (Germany); Silva, Pedro [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Steinbrueck, Georg [Hamburg University, Notkestraße 85, 22607 Hamburg (Germany); Fatis, Tommaso Tabarelli de [Istituto Nazionale di Fisica Nucleare – Sezione di Milano-Bicocca Piazza della Scienza 3, 20126 Milano (Italy); Vila, Iván [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain)

2017-02-11

The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb{sup −1} per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ∼1.0 cm{sup 2} and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb{sup −1}, the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 10{sup 16} neq/cm{sup 2}. A radiation tolerance study after neutron irradiation of 300, 200, and 100 μm n-on-p and p-on-n silicon pads irradiated to fluences up to 1.6×10{sup 16} neq/cm{sup 2} is presented. The properties of these diodes studied before and after irradiation were leakage current, capacitance, charge collection efficiency, annealing effects and timing capability. The results of these measurements validate these sensors as candidates for the HGC system.

Irradiation tests of critical components for remote handling system in gamma radiation environment

International Nuclear Information System (INIS)

Obara, Kenjiro; Kakudate, Satoshi; Oka, Kiyoshi

1996-03-01

This report covers the gamma ray irradiation tests according to the Agreement of ITER R and D Task (T35) in 1994 and describes radiation hardness of the standard components for the ITER remote handling system which are categorized into the robotics (Subtask-1), the viewing system (Subtask-2) and the common components (Subtask-3). The gamma ray irradiation tests have been conducted using No.2 and No.3 cells at the cobalt building of Takasaki Establishment in JAERI. The radiation source is cobalt sixty (Co-60), and the maximum dose rate of No.2 and No.3 cells is about 1x10 6 R/h and 2x10 6 R/h, respectively. The environmental conditions of the irradiation tests are described below and all of components excepting electrical wires have been tested in the No.2 cell. [No.2 cell : Atmosphere and ambient temperature No.3 cell : Nitrogen gas and 250degC] As a whole, many of components have been irradiated up to the rated dose of around 1x10 10 rads and the following main results are obtained. The developed AC servo motor and periscope for radiation use have shown excellent durability with the radiation hardness tolerable for more than 10 9 rads. An electrical connector compatible with remote operation has also shown no degradation of electrical characteristics after the irradiation of 10 10 rads. As for polyimide insulated wires, the mechanical and electrical characteristics are not degradated after the irradiation of 10 9 rads and more radiation hardness can be expected than the anticipation. On the contrary, standard position sensors such as rotary encoder show extremely low radiation hardness and further efforts have to be made for improvements. (J.P.N.)

Studies of radiation damage in silicon sensors and a measurement of the inelastic proton--proton cross-section at 13 TeV

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00360674; Ward, Patricia

This thesis presents studies of radiation damage in silicon sensors for the new ATLAS tracker at the high-luminosity LHC, calibrations of the LHC luminosity scale, and a measurement of the proton--proton inelastic cross-section at 13 TeV~with ATLAS data. The studies of radiation damage are performed by comparing sensor performance before and after irradiation, and include annealing studies. The measured quantities include: leakage current, depletion depth, inter-strip isolation, and charge collection. Surface and bulk damage is studied by comparing the results of sensors irradiated with protons and neutrons. The observed degradation of performance suggests the current sensor design will endure the radiation damage expected over the lifetime of the experiment at the high-luminosity LHC. The luminosity is calibrated for the proton--proton, proton--lead, and lead--lead collisions delivered by the LHC during 2013 and 2015. The absolute luminosity scale is derived with the van der Meer method. The systematic unc...

Radiation effects on active pixel sensors (APS); Effets de l'irradiation sur les capteurs a pixels actifs (APS)

Energy Technology Data Exchange (ETDEWEB)

Cohen, M.; David, J.P. [ONERA-CERT/, 31 - Toulouse (France)

1999-07-01

Active pixel sensor (APS) is a new generation of image sensors which presents several advantages relatively to charge coupled devices (CCDs) particularly for space applications (APS requires only 1 voltage to operate which reduces considerably current consumption). Irradiation was performed using {sup 60}Co gamma radiation at room temperature and at a dose rate of 150 Gy(Si)/h. 2 types of APS have been tested: photodiode-APS and photoMOS-APS. The results show that photoMOS-APS is more sensitive to radiation effects than photodiode-APS. Important parameters of image sensors like dark currents increase sharply with dose levels. Nevertheless photodiode-APS sensitivity is one hundred time lower than photoMOS-APS sensitivity.

Radiation hardness investigation of avalanche photodiodes for the Projectile Spectator Detector readout at the Compressed Baryonic Matter experiment

Czech Academy of Sciences Publication Activity Database

Kushpil, Vasilij; Mikhaylov, Vasily; Kushpil, Svetlana; Tlustý, Pavel; Svoboda, Ondřej; Kugler, Andrej

2015-01-01

Roč. 787, JUL (2015), s. 117-120 ISSN 0168-9002 R&D Projects: GA MŠk LG12007; GA MŠk LG14004; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : avalanche photodiodes * single protons detection * radiation hardness * neutron irradiation tests * compressed Baryonic Matter experiment * Projectile Spectator Detector Subject RIV: BG - Nuclear, Atomic and Molecular Physics , Colliders Impact factor: 1.200, year: 2015

Exploring the quality of latest sensor prototypes for the CMS Tracker Phase II Upgrade

Energy Technology Data Exchange (ETDEWEB)

König, A., E-mail: axel.koenig@oeaw.ac.at

2017-02-11

The luminosity of the LHC will be increased by a factor of five to seven after the third long shutdown (LS3) scheduled in the mid of the next decade. The significant increase in luminosity along with the limitations of the current Tracker require a complete renewal of the CMS Outer Tracker, the Tracker Phase-2 Upgrade, during the LS3. New types of modules called PS and 2S modules are foreseen offering enhanced functionality and radiation hardness. Milestones in sensor R&D for the 2S modules as well as first characterization results are presented. AC-coupled silicon strip sensors of two vendors, produced on 6-inch as well as on 8-inch wafers, are considered which both are in n-on-p technology. Global as well as single strip parameters were measured providing insights into the quality of the sensors.

Recent achievements of the ATLAS upgrade Planar Pixel Sensors R and D project

International Nuclear Information System (INIS)

Casse, G

2014-01-01

The ATLAS upgrade Planar Pixel Sensors (PPS) project aims to prove the suitability of silicon detectors processed with planar technology to equip all layers of the pixel vertex detector proposed for the upgrade of the ATLAS experiment for the future High Luminosity LHC at CERN (HL-LHC). The detectors need to be radiation tolerant to the extreme fluences expected to be received during the experimental lifetime, with optimised geometry for full coverage and high granularity and affordable in term of cost, due to the relatively large area of the upgraded ATLAS detector system. Here several solutions for the detector geometry and results with radiation hard technologies (n-in-n, n-in-p) are discussed

Radiation hardness of a single crystal CVD diamond detector for MeV energy protons

Energy Technology Data Exchange (ETDEWEB)

Sato, Yuki, E-mail: y.sato@riken.jp [The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Shimaoka, Takehiro; Kaneko, Junichi H. [Graduate School of Engineering, Hokkaido University, N13, W8, Sapporo 060-8628 (Japan); Murakami, Hiroyuki [The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Isobe, Mitsutaka; Osakabe, Masaki [National Institute for Fusion Science, 322-6, Oroshi-cho Toki-city, Gifu 509-5292 (Japan); Tsubota, Masakatsu [Graduate School of Engineering, Hokkaido University, N13, W8, Sapporo 060-8628 (Japan); Ochiai, Kentaro [Fusion Research and Development Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Chayahara, Akiyoshi; Umezawa, Hitoshi; Shikata, Shinichi [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

2015-06-01

We have fabricated a particle detector using single crystal diamond grown by chemical vapor deposition. The irradiation dose dependence of the output pulse height from the diamond detector was measured using 3 MeV protons. The pulse height of the output signals from the diamond detector decreases as the amount of irradiation increases at count rates of 1.6–8.9 kcps because of polarization effects inside the diamond crystal. The polarization effect can be cancelled by applying a reverse bias voltage, which restores the pulse heights. Additionally, the radiation hardness performance for MeV energy protons was compared with that of a silicon surface barrier detector.

Modeling radiation damage to pixel sensors in the ATLAS detector

Science.gov (United States)

Ducourthial, A.

2018-03-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC) . As the closest detector component to the interaction point, these detectors will be subject to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC) [1], the innermost layers will receive a fluence in excess of 1015 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is essential in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects on the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside early studies with LHC Run 2 proton-proton collision data.

Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders

CERN Multimedia

Joram, C; Gregor, I; Dierlamm, A H; Wilson, F F; Sloan, T; Tuboltsev, Y V; Marone, M; Artuso, M; Cindro, V; Bruzzi, M; Bhardwaj, A; Bohm, J; Mikestikova, M; Walz, M; Breindl, M A; Ruzin, A; Marunko, S; Guskov, J; Haerkoenen, J J; Pospisil, S; Fadeyev, V; Makarenko, L; Kaminski, P; Zelazko, J; Pintilie, L; Radu, R; Nistor, S V; Ullan comes, M; Storasta, J V; Gaubas, E; Lacasta llacer, C; Kilminster, B J; Garutti, E; Buhmann, P; Khomenkov, V; Poehlsen, J A; Fernandez garcia, M; Buttar, C; Eklund, L M; Munoz sanchez, F J; Eremin, V; Aleev, A; Modi, B; Sicho, P; Gisen, A J; Nikolopoulos, K; Van beuzekom, M G; Kozlowski, R; Lozano fantoba, M; Leroy, C; Pernegger, H; Del burgo, R; Vila alvarez, I; Palomo pinto, F R; Lounis, A; Eremin, I; Fadeeva, N; Rogozhkin, S; Shivpuri, R K; Arsenovich, T; Ott, J; Abt, M; Loenker, J; Savic, N; Monaco, V; Visser, J; Lynn, D; Horazdovsky, T; Solar, M; Dervan, P J; Meng, L; Spencer, E N; Kazuchits, N; Brzozowski, A; Kozubal, M; Nistor, L C; Marti i garcia, S; Gomez camacho, J J; Fretwurst, E; Hoenniger, F; Schwandt, J; Hartmann, F; Marchiori, G; Maneuski, D; De capua, S; Williams, M R J; Mandic, I; Gadda, A; Preiss, J; Macchiolo, A; Nisius, R; Grinstein, S; Gonella, L; Wennloef, H L O; Slavicek, T; Masek, P; Casse, G; Flores, D; Tuuva, T; Jimenez ramos, M D C; Charron, S; Rubinskiy, I; Jansen, H; Eichhorn, T V; Matysek, M; Andersson-lindstroem, G; Donegani, E; Bomben, M; Oshea, V; Muenstermann, D; Holmkvist, C W; Oh, A; Lopez paz, I; Verbitskaya, E; Mitina, D; Grigoriev, E; Zaluzhnyy, A; Mikuz, M; Kramberger, G; Scaringella, M; Ranjeet, R; Jain, A; Luukka, P R; Tuominen, E M; Allport, P P; Cartiglia, N; Brigljevic, V; Kohout, Z; Quirion, D; Lauer, K; Collins, P; Gallrapp, C; Rohe, T V; Chauveau, J; Villani, E G; Fox, H; Parkes, C J; Nikitin, A; Spiegel, L G; Creanza, D M; Menichelli, D; Mcduff, H; Carna, M; Weers, M; Weigell, P; Bortoletto, D; Staiano, A; Bellan, R; Szumlak, T; Sopko, V; Pawlowski, M; Pintilie, I; Pellegrini, G; Rafi tatjer, J M; Moll, M; Eckstein, D; Klanner, R; Gomez, G; Gersabeck, M; Cobbledick, J L; Shepelev, A; Golubev, A; Apresyan, A; Lipton, R J; Borgia, A; Zavrtanik, M; Manna, N; Ranjan, K; Chhabra, S; Beyer, J; Korolkov, I; Heintz, U; Sadrozinski, H; Seiden, A; Surma, B; Esteban, S; Kazukauskas, V; Kalendra, V; Mekys, A; Nachman, B P; Tackmann, K; Steinbrueck, G; Pohlsen, T; Calderini, G; Svihra, P; Murray, D; Bolla, G; Zontar, D; Focardi, E; Seidel, S C; Winkler, A D; Altenheiner, S; Parzefall, U; Moser, H; Sopko, B; Buckland, M D; Vaitkus, J V; Ortlepp, T

2002-01-01

The requirements at the Large Hadron Collider (LHC) at CERN have pushed the present day silicon tracking detectors to the very edge of the current technology. Future very high luminosity colliders or a possible upgrade scenario of the LHC to a luminosity of 10$^{35}$ cm$^{-2}$s$^{-1}$ will require semiconductor detectors with substantially improved properties. Considering the expected total fluences of fast hadrons above 10$^{16}$ cm$^{-2}$ and a possible reduced bunch-crossing interval of $\\approx$10 ns, the detector must be ultra radiation hard, provide a fast and efficient charge collection and be as thin as possible.\\\\ We propose a research and development program to provide a detector technology, which is able to operate safely and efficiently in such an environment. Within this project we will optimize existing methods and evaluate new ways to engineer the silicon bulk material, the detector structure and the detector operational conditions. Furthermore, possibilities to use semiconductor materials othe...

Effects of gamma radiation on hard dental tissues of albino rats: investigation by light microscopy.

Science.gov (United States)

El-Faramawy, Nabil; Ameen, Reham; El-Haddad, Khaled; El-Zainy, Medhat

2013-08-01

The present work aims at studying the effect of gamma radiation on the hard dental tissues. Eighty adult male albino rats with weights of about 250 g were used. The rats were irradiated at 0.2, 0.5, 1.0, 2.0, 4.0 and 6.0 Gy whole-body gamma doses. The effects on hard dental tissue samples were investigated after 48 h in histological and ground sections using light microscopy. Areas of acid phosphatase activity were detected using tartrate-resistant acid phosphatase (TRAP) stains. Observation of histological sections revealed disturbance in predentin thickness and odontoblastic layer as the irradiation dose increased. In cementum, widened cementocytes lacunae were occasionally detected even with low irradiated doses. On the other hand, relatively homogenous enamel was detected with darkened areas in enamel surface at doses over than 0.5 Gy. TRAP-positive cells were detected on the surface of the dentin of irradiated groups as well as cementum surface. Minimal detectable changes were observed in ground sections.

Methodology Development for SiC Sensor Signal Modelling in the Nuclear Reactor Radiation Environments

International Nuclear Information System (INIS)

Cetnar, J.; Krolikowski, I.P.

2013-06-01

This paper deals with SiC detector simulation methodology for signal formation by neutrons and induced secondary radiation as well as its inverse interpretation. The primary goal is to achieve the SiC capability of simultaneous spectroscopic measurements of neutrons and gamma-rays for which an appropriate methodology of the detector signal modelling and its interpretation must be adopted. The process of detector simulation is divided into two basically separate but actually interconnected sections. The first one is the forward simulation of detector signal formation in the field of the primary neutron and secondary radiations, whereas the second one is the inverse problem of finding a representation of the primary radiation, based on the measured detector signals. The applied methodology under development is based on the Monte Carlo description of radiation transport and analysis of the reactor physics. The methodology of SiC detector signal interpretation will be based on the existing experience in neutron metrology developed in the past for various neutron and gamma-ray detection systems. Since the novel sensors based on SiC are characterised by a new structure, yet to be finally designed, the methodology for particle spectroscopic fluence measurement must be developed while giving a productive feed back to the designing process of SiC sensor, in order to arrive at the best possible design. (authors)

Clementine sensor suite

Energy Technology Data Exchange (ETDEWEB)

Ledebuhr, A.G. [Lawrence Livermore National Lab., CA (United States)

1994-11-15

LLNL designed and built the suite of six miniaturized light-weight space-qualified sensors utilized in the Clementine mission. A major goal of the Clementine program was to demonstrate technologies originally developed for Ballistic Missile Defense Organization Programs. These sensors were modified to gather data from the moon. This overview presents each of these sensors and some preliminary on-orbit performance estimates. The basic subsystems of these sensors include optical baffles to reject off-axis stray light, light-weight ruggedized optical systems, filter wheel assemblies, radiation tolerant focal plane arrays, radiation hardened control and readout electronics and low mass and power mechanical cryogenic coolers for the infrared sensors. Descriptions of each sensor type are given along with design specifications, photographs and on-orbit data collected.

Radiation Damage Modeling for 3D Pixel Sensors in the ATLAS Detector

CERN Document Server

Wallangen, Veronica; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This poster presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS Detector.

The underlying event in hard scattering processes

International Nuclear Information System (INIS)

Field, R.

2002-01-01

The authors study the behavior of the underlying event in hard scattering proton-antiproton collisions at 1.8 TeV and compare with the QCD Monte-Carlo models. The underlying event is everything except the two outgoing hard scattered jets and receives contributions from the beam-beam remnants plus initial and final-state radiation. The data indicate that neither ISAJET or HERWIG produce enough charged particles (with p T > 0.5 GeV/c) from the beam-beam remnant component and that ISAJET produces too many charged particles from initial-state radiation. PYTHIA which uses multiple parton scattering to enhance the underlying event does the best job describing the data

Geneva University: Recent developments on 3D sensors

CERN Multimedia

Geneva University

2011-01-01

GENEVA UNIVERSITY Ecole de physique Département de physique nucléaire et corspusculaire 24, quai Ernest-Ansermet 1211 Genève 4 Tél.: (022) 379 62 73 Fax: (022) 379 69 92 Wednesday  2 November  2011 SEMINAIRE DE PHYSIQUE CORPUSCULAIRE at 17.00 hrs – Stückelberg Auditorium “Recent developments on 3D sensors” Dr Cinzia Da Via, University of Manchester, UK 3D are a novel kind of silicon radiation sensors where electrodes are micromachined inside the semiconductor substrate rather than being processed on its surfaces. This is possible by using Deep Reaction Io Etching, the same technique used to Fabricate MEMS (Micro-Electro-Mechanical Systems). Properties of this innovative design include extreme radiation hardness and high speed. Several Industrial partners and Academic institutes successfully joined together to accelerate the transition between the 3D R&D phase and Industrialization. This seminar will ...

Monitoring radiation damage in the ATLAS pixel detector

CERN Document Server

Schorlemmer, André Lukas; Quadt, Arnulf; Große-Knetter, Jörn; Rembser, Christoph; Di Girolamo, Beniamino

2014-11-05

Radiation hardness is one of the most important features of the ATLAS pixel detector in order to ensure a good performance and a long lifetime. Monitoring of radiation damage is crucial in order to assess and predict the expected performance of the detector. Key values for the assessment of radiation damage in silicon, such as the depletion voltage and depletion depth in the sensors, are measured on a regular basis during operations. This thesis summarises the monitoring program that is conducted in order to assess the impact of radiation damage and compares it to model predictions. In addition, the physics performance of the ATLAS detector highly depends on the amount of disabled modules in the ATLAS pixel detector. A worrying amount of module failures was observed during run I. Thus it was decided to recover repairable modules during the long shutdown (LS1) by extracting the pixel detector. The impact of the module repairs and module failures on the detector performance is analysed in this thesis.

Diamond detectors for synchrotron radiation X-ray applications

Energy Technology Data Exchange (ETDEWEB)

De Sio, A. [Laboratori Nazionali di Frascati, INFN, 00044 Frascati, Roma (Italy); Department of Astronomy and Space Science, Universita di Firenze, L.go E. Fermi 2, 50125 Firenze (Italy)], E-mail: desio@arcetri.astro.it; Pace, E. [Department of Astronomy and Space Science, Universita di Firenze, L.go E. Fermi 2, 50125 Firenze (Italy); INFN, Sezione di Firenze, v. G. Sansone 1, Sesto Fiorentino, Firenze (Italy); Cinque, G.; Marcelli, A. [Laboratori Nazionali di Frascati, INFN, 00044 Frascati, Roma (Italy); Achard, J.; Tallaire, A. [LIMHP-CNRS, University of Paris XIII, 99 Avenue JB Clement, 93430 Villetaneuse (France)

2007-07-15

Due to its unique physical properties, diamond is a very appealing material for the development of electronic devices and sensors. Its wide band gap (5.5 eV) endows diamond based devices with low thermal noise, low dark current levels and, in the case of radiation detectors, high visible-to-X-ray signal discrimination (visible blindness) as well as high sensitivity to energies greater than the band gap. Furthermore, due to its radiation hardness diamond is very interesting for applications in extreme environments, or as monitor of high fluency radiation beams. In this work the use of diamond based detectors for X-ray sensing is discussed. On purpose, some photo-conductors based on different diamond types have been tested at the DAFNE-L synchrotron radiation laboratory at Frascati. X-ray sensitivity spectra, linearity and stability of the response of these diamond devices have been measured in order to evidence the promising performance of such devices.

Diamond detectors for synchrotron radiation X-ray applications

International Nuclear Information System (INIS)

De Sio, A.; Pace, E.; Cinque, G.; Marcelli, A.; Achard, J.; Tallaire, A.

2007-01-01

Due to its unique physical properties, diamond is a very appealing material for the development of electronic devices and sensors. Its wide band gap (5.5 eV) endows diamond based devices with low thermal noise, low dark current levels and, in the case of radiation detectors, high visible-to-X-ray signal discrimination (visible blindness) as well as high sensitivity to energies greater than the band gap. Furthermore, due to its radiation hardness diamond is very interesting for applications in extreme environments, or as monitor of high fluency radiation beams. In this work the use of diamond based detectors for X-ray sensing is discussed. On purpose, some photo-conductors based on different diamond types have been tested at the DAFNE-L synchrotron radiation laboratory at Frascati. X-ray sensitivity spectra, linearity and stability of the response of these diamond devices have been measured in order to evidence the promising performance of such devices

Sustainably Sourced, Thermally Resistant, Radiation Hard Biopolymer

Science.gov (United States)

Pugel, Diane

2011-01-01

This material represents a breakthrough in the production, manufacturing, and application of thermal protection system (TPS) materials and radiation shielding, as this represents the first effort to develop a non-metallic, non-ceramic, biomaterial-based, sustainable TPS with the capability to also act as radiation shielding. Until now, the standing philosophy for radiation shielding involved carrying the shielding at liftoff or utilizing onboard water sources. This shielding material could be grown onboard and applied as needed prior to different radiation landscapes (commonly seen during missions involving gravitational assists). The material is a bioplastic material. Bioplastics are any combination of a biopolymer and a plasticizer. In this case, the biopolymer is a starch-based material and a commonly accessible plasticizer. Starch molecules are composed of two major polymers: amylase and amylopectin. The biopolymer phenolic compounds are common to the ablative thermal protection system family of materials. With similar constituents come similar chemical ablation processes, with the potential to have comparable, if not better, ablation characteristics. It can also be used as a flame-resistant barrier for commercial applications in buildings, homes, cars, and heater firewall material. The biopolymer is observed to undergo chemical transformations (oxidative and structural degradation) at radiation doses that are 1,000 times the maximum dose of an unmanned mission (10-25 Mrad), indicating that it would be a viable candidate for robust radiation shielding. As a comparison, the total integrated radiation dose for a three-year manned mission to Mars is 0.1 krad, far below the radiation limit at which starch molecules degrade. For electron radiation, the biopolymer starches show minimal deterioration when exposed to energies greater than 180 keV. This flame-resistant, thermal-insulating material is non-hazardous and may be sustainably sourced. It poses no hazardous

Non-stoichiometry defects and radiation hardness of lead tungstate crystals PbWO sub 4

CERN Document Server

Devitsin, E G; Potashov, S Yu; Terkulov, A R; Nefedov, V A; Polyansky, E V; Zadneprovski, B I; Kjellberg, P; Korbel, V

2002-01-01

It has been stated many times that the formation of radiation infringements in PbWO sub 4 is to a big extent stipulated by the non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of the non-stoichiometry defects and their effect on the radiation hardness of PbWO sub 4 , the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation ( sup 1 sup 3 sup 7 Cs source). In the optical transmission measurements along with traditional techniques a method 'in situ' was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO sub 4 melt has found PbWO sub 4 phase in their content as well as compounds rich in lead PbO, Pb sub 2 WO sub 5 with overall ratio Pb/W (3....

Radiation hard analog circuits for ALICE ITS upgrade

Science.gov (United States)

Gajanana, D.; Gromov, V.; Kuijer, P.; Kugathasan, T.; Snoeys, W.

2016-03-01

The ALICE experiment is planning to upgrade the ITS (Inner Tracking System) [1] detector during the LS2 shutdown. The present ITS will be fully replaced with a new one entirely based on CMOS monolithic pixel sensor chips fabricated in TowerJazz CMOS 0.18 μ m imaging technology. The large (3 cm × 1.5 cm = 4.5 cm2) ALPIDE (ALICE PIxel DEtector) sensor chip contains about 500 Kpixels, and will be used to cover a 10 m2 area with 12.5 Gpixels distributed over seven cylindrical layers. The ALPOSE chip was designed as a test chip for the various building blocks foreseen in the ALPIDE [2] pixel chip from CERN. The building blocks include: bandgap and Temperature sensor in four different flavours, and LDOs for powering schemes. One flavour of bandgap and temperature sensor will be included in the ALPIDE chip. Power consumption numbers have dropped very significantly making the use of LDOs less interesting, but in this paper all blocks are presented including measurement results before and after irradiation with neutrons to characterize robustness against displacement damage.

Dense plasma focus PACO as a hard X-ray emitter: a study on the radiation source

OpenAIRE

Supán, L.; Guichón, S.; Milanese, Maria Magdalena; Niedbalski, Jorge Julio; Moroso, Roberto Luis; Acuña, H.; Malamud, Florencia

2016-01-01

The radiation in the X-ray range detected outside the vacuum chamber of the dense plasma focus (DPF) PACO, are produced on the anode zone. The zone of emission is studied in a shot-to-shot analysis, using pure deuterium as filling gas. We present a diagnostic method to determine the place and size of the hard X-ray source by image analysis of high density radiography plates. Fil: Supán, L.. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Insti...

Accompanying of parameters of color, gloss and hardness on polymeric films coated with pigmented inks cured by different radiation doses of ultraviolet light

International Nuclear Information System (INIS)

Gonçalves Bardi, Marcelo Augusto; Brocardo Machado, Luci Diva

2012-01-01

In the search for alternatives to traditional paint systems solvent-based, the curing process of polymer coatings by ultraviolet light (UV) has been widely studied and discussed, especially because of their high content of solids and null emission of VOC. In UV-curing technology, organic solvents are replaced by reactive diluents, such as monomers. This paper aims to investigate variations on color, gloss and hardness of print inks cured by different UV radiation doses. The ratio pigment/clear coating was kept constant. The clear coating presented higher average values for König hardness than pigmented ones, indicating that UV-light absorption has been reduced by the presence of pigments. Besides, they have indicated a slight variation in function of cure degree for the studied radiation doses range. The gloss loss related to UV light exposition allows inferring that some degradation occurred at the surface of print ink films. - Highlights: ► Color, gloss and hardness are directly influenced by the different pigments. ► Clear coating analysis indicates reduction on UV-light absorption. ► Color and gloss indices indicated aeration in function of cure degree.

Methods and apparatuses for detection of radiation with semiconductor image sensors

Science.gov (United States)

Cogliati, Joshua Joseph

2018-04-10

A semiconductor image sensor is repeatedly exposed to high-energy photons while a visible light obstructer is in place to block visible light from impinging on the sensor to generate a set of images from the exposures. A composite image is generated from the set of images with common noise substantially removed so the composite image includes image information corresponding to radiated pixels that absorbed at least some energy from the high-energy photons. The composite image is processed to determine a set of bright points in the composite image, each bright point being above a first threshold. The set of bright points is processed to identify lines with two or more bright points that include pixels therebetween that are above a second threshold and identify a presence of the high-energy particles responsive to a number of lines.

1999-2003 Shortwave Characterizations of Earth Radiation Budget Satellite (ERBS)/Earth Radiation Budget Experiment (ERBE) Broadband Active Cavity Radiometer Sensors

Science.gov (United States)

Lee, Robert B., III; Smith, George L.; Wong, Takmeng

2008-01-01

From October 1984 through May 2005, the NASA Earth Radiation Budget Satellite (ERBS/ )/Earth Radiation Budget Experiment (ERBE)ERBE nonscanning active cavity radiometers (ACR) were used to monitor long-term changes in the earth radiation budget components of the incoming total solar irradiance (TSI), earth-reflected TSI, and earth-emitted outgoing longwave radiation (OLR). From September1984 through September 1999, using on-board calibration systems, the ERBS/ERBE ACR sensor response changes, in gains and offsets, were determined from on-orbit calibration sources and from direct observations of the incoming TSI through calibration solar ports at measurement precision levels approaching 0.5 W/sq m , at satellite altitudes. On October 6, 1999, the onboard radiometer calibration system elevation drive failed. Thereafter, special spacecraft maneuvers were performed to observe cold space and the sun in order to define the post-September 1999 geometry of the radiometer measurements, and to determine the October 1999-September 2003 ERBS sensor response changes. Analyses of these special solar and cold space observations indicate that the radiometers were pointing approximately 16 degrees away from the spacecraft nadir and on the anti-solar side of the spacecraft. The special observations indicated that the radiometers responses were stable at precision levels approaching 0.5 W/sq m . In this paper, the measurement geometry determinations and the determinations of the radiometers gain and offset are presented, which will permit the accurate processing of the October 1999 through September 2003 ERBE data products at satellite and top-of-the-atmosphere altitudes.

Sensors, Volume 4, Thermal Sensors

Science.gov (United States)

Scholz, Jorg; Ricolfi, Teresio

1996-12-01

'Sensors' is the first self-contained series to deal with the whole area of sensors. It describes general aspects, technical and physical fundamentals, construction, function, applications and developments of the various types of sensors. This volume describes the construction and applicational aspects of thermal sensors while presenting a rigorous treatment of the underlying physical principles. It provides a unique overview of the various categories of sensors as well as of specific groups, e.g. temperature sensors (resistance thermometers, thermocouples, and radiation thermometers), noise and acoustic thermometers, heat-flow and mass-flow sensors. Specific facettes of applications are presented by specialists from different fields including process control, automotive technology and cryogenics. This volume is an indispensable reference work and text book for both specialists and newcomers, researchers and developers.

Radioactivity measurement of radioactive contaminated soil by using a fiber-optic radiation sensor

Science.gov (United States)

Joo, Hanyoung; Kim, Rinah; Moon, Joo Hyun

2016-06-01

A fiber-optic radiation sensor (FORS) was developed to measure the gamma radiation from radioactive contaminated soil. The FORS was fabricated using an inorganic scintillator (Lu,Y)2SiO5:Ce (LYSO:Ce), a mixture of epoxy resin and hardener, aluminum foil, and a plastic optical fiber. Before its real application, the FORS was tested to determine if it performed adequately. The test result showed that the measurements by the FORS adequately followed the theoretically estimated values. Then, the FORS was applied to measure the gamma radiation from radioactive contaminated soil. For comparison, a commercial radiation detector was also applied to measure the same soil samples. The measurement data were analyzed by using a statistical parameter, the critical level to determine if net radioactivity statistically different from background was present in the soil sample. The analysis showed that the soil sample had radioactivity distinguishable from background.