WorldWideScience

Sample records for radiation hard sensors

  1. Radiation hardness of diamond and silicon sensors compared

    CERN Document Server

    de Boer, Wim; Furgeri, Alexander; Mueller, Steffen; Sander, Christian; Berdermann, Eleni; Pomorski, Michal; Huhtinen, Mika

    2007-01-01

    The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si- and C-sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non-Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non-relativistic energies the elastic cross section prevails. The smaller inelastic nucleon-Carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller.

  2. Radiation hard silicon sensors for the CMS tracker upgrade

    CERN Document Server

    Pohlsen, Thomas

    2013-01-01

    At an instantaneous luminosity of $5 \\times 10^{34}$ cm$^{-2}$ s$^{-1}$, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of $3\\,000$ fb$^{-1}$ of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation dose of the tracking systems will be severe, requiring new radiation hard sensors for the CMS tracker. The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfils all requirements for detectors for the HL-LHC. Focussing on the upgrade of the outer tracker region, pad sensors as well as fully functional strip sensors have been implemented on silicon wafers with different material properties and thicknesses. The samples were irradiated with a mixture of neutrons and protons corresponding to fluences as expected for the positions of detector layers in the future tracker. Different proton energies were used for irr...

  3. Radiation hard diamond sensors for future tracking applications

    International Nuclear Information System (INIS)

    Adam, W.; Boer, W. de; Borchi, E.

    2006-01-01

    Progress in experimental particle physics in the coming decade depends crucially upon the ability to carry out experiments in high-radiation areas. In order to perform these complex and expensive experiments, new radiation hard technologies must be developed. This paper discusses the use of diamond detectors in future tracking applications and their survivability in the highest radiation environments. We present results of devices constructed with the newest polycrystalline and single crystal Chemical Vapor Deposition diamond and their tolerance to radiation

  4. First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors

    Science.gov (United States)

    Pernegger, H.; Bates, R.; Buttar, C.; Dalla, M.; van Hoorne, J. W.; Kugathasan, T.; Maneuski, D.; Musa, L.; Riedler, P.; Riegel, C.; Sbarra, C.; Schaefer, D.; Schioppa, E. J.; Snoeys, W.

    2017-06-01

    The upgrade of the ATLAS [1] tracking detector for the High-Luminosity Large Hadron Collider (LHC) at CERN requires novel radiation hard silicon sensor technologies. Significant effort has been put into the development of monolithic CMOS sensors but it has been a challenge to combine a low capacitance of the sensing node with full depletion of the sensitive layer. Low capacitance brings low analog power. Depletion of the sensitive layer causes the signal charge to be collected by drift sufficiently fast to separate hits from consecutive bunch crossings (25 ns at the LHC) and to avoid losing the charge by trapping. This paper focuses on the characterization of charge collection properties and detection efficiency of prototype sensors originally designed in the framework of the ALICE Inner Tracking System (ITS) upgrade [2]. The prototypes are fabricated both in the standard TowerJazz 180nm CMOS imager process [3] and in an innovative modification of this process developed in collaboration with the foundry, aimed to fully deplete the sensitive epitaxial layer and enhance the tolerance to non-ionizing energy loss. Sensors fabricated in standard and modified process variants were characterized using radioactive sources, focused X-ray beam and test beams before and after irradiation. Contrary to sensors manufactured in the standard process, sensors from the modified process remain fully functional even after a dose of 1015neq/cm2, which is the the expected NIEL radiation fluence for the outer pixel layers in the future ATLAS Inner Tracker (ITk) [4].

  5. First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors

    International Nuclear Information System (INIS)

    Pernegger, H.; Hoorne, J.W. van; Kugathasan, T.; Musa, L.; Riedler, P.; Riegel, C.; Schaefer, D.; Schioppa, E.J.; Snoeys, W.; Bates, R.; Buttar, C.; Maneuski, D.; Dalla, M.; Sbarra, C.

    2017-01-01

    The upgrade of the ATLAS [1] tracking detector for the High-Luminosity Large Hadron Collider (LHC) at CERN requires novel radiation hard silicon sensor technologies. Significant effort has been put into the development of monolithic CMOS sensors but it has been a challenge to combine a low capacitance of the sensing node with full depletion of the sensitive layer. Low capacitance brings low analog power. Depletion of the sensitive layer causes the signal charge to be collected by drift sufficiently fast to separate hits from consecutive bunch crossings (25 ns at the LHC) and to avoid losing the charge by trapping. This paper focuses on the characterization of charge collection properties and detection efficiency of prototype sensors originally designed in the framework of the ALICE Inner Tracking System (ITS) upgrade [2]. The prototypes are fabricated both in the standard TowerJazz 180nm CMOS imager process [3] and in an innovative modification of this process developed in collaboration with the foundry, aimed to fully deplete the sensitive epitaxial layer and enhance the tolerance to non-ionizing energy loss. Sensors fabricated in standard and modified process variants were characterized using radioactive sources, focused X-ray beam and test beams before and after irradiation. Contrary to sensors manufactured in the standard process, sensors from the modified process remain fully functional even after a dose of 10"1"5 n _e_q/cm"2, which is the the expected NIEL radiation fluence for the outer pixel layers in the future ATLAS Inner Tracker (ITk) [4].

  6. Towards Radiation Hard Sensor Materials for the CMS Tracker Upgrade

    CERN Document Server

    Steinbrueck, Georg

    2012-01-01

    Many measurements are described in literature, performed on a variety of silicon materials and technologies, but they are often hard to compare, because they were done under different conditions. To systematically compare the prope...

  7. RD50 recent results: Development of radiation hard sensors for SLHC

    CERN Document Server

    Macchiolo, Anna

    2009-01-01

    The need for radiation hard semiconductor detectors for the tracker regions in high energy physics experiments at a future high luminosity hadron collider, like the proposed LHC upgrade, has led to the formation of the CERN RD50 collaboration. The R&D directions of RD50 follow two paths: the optimization of radiation hard bulk materials (Material Engineering) and the development of new detector designs (Device Engineering) as 3D sensors, thin sensors and n-in-p sensors. Some of the RD50 most recent results about silicon detectors are reported in this paper, with special reference to: (i) identification of defects responsible for long term annealing, (ii) charge collection efficiency of irradiated planar devices, in particular n-in-p microstrip detectors and epitaxial diodes, (iii) charge collection efficiency of double-type column 3D detectors, (iv) comparison of the performances of FZ and MCZ structures under mixed irradiation.

  8. Performance of Radiation Hard Pixel Sensors for the CMS Experiment

    CERN Document Server

    Dorokhov, Andrei

    2005-01-01

    Position sensitive detectors in particle physics experiments are used for the detection of the particles trajectory produced in high energy collisions. To study physics phenomena at high energies the high particle interaction rate is unavoidable, as the number of interesting events falls with the energy and the total number of events is dominated by the soft processes. The position resolution of vertex detectors has to be of few microns in order to distinguish between particle tracks produced in b-quark or tau-decays, because of the short flight path before the decay. The high spatial position resolution and the ability to detect a large number of superimposed track are the key features for tracking detectors. Modern silicon microstrip and pixel detectors with high resolution are currently most suitable devices for the tracking systems of high energy physics experiments. In this work the performance of the sensors designed for the CMS pixel detector are studied and the position resolution is estimated. In the...

  9. Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, Gian-Franco, E-mail: gianfranco.dallabetta@unitn.it [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Betancourt, Christopher [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Boscardin, Maurizio; Giacomini, Gabriele [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy); Jakobs, Karl; Kühn, Susanne [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Lecini, Besnik [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Mendicino, Roberto [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Mori, Riccardo; Parzefall, Ulrich [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Povoli, Marco [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Thomas, Maira [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Zorzi, Nicola [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy)

    2014-11-21

    This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages.

  10. Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Betancourt, Christopher; Boscardin, Maurizio; Giacomini, Gabriele; Jakobs, Karl; Kühn, Susanne; Lecini, Besnik; Mendicino, Roberto; Mori, Riccardo; Parzefall, Ulrich; Povoli, Marco; Thomas, Maira; Zorzi, Nicola

    2014-01-01

    This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages

  11. Development of radiation hard CMOS active pixel sensors for HL-LHC

    International Nuclear Information System (INIS)

    Pernegger, Heinz

    2016-01-01

    New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

  12. Design of a radiation hard silicon pixel sensor for X-ray science

    Energy Technology Data Exchange (ETDEWEB)

    Schwandt, Joern

    2014-06-15

    At DESY Hamburg the European X-ray Free-Electron Laser (EuXFEL) is presently under construction. The EuXFEL has unique properties with respect to X-ray energy, instantaneous intensity, pulse length, coherence and number of pulses/sec. These properties of the EuXFEL pose very demanding requirements for imaging detectors. One of the detector systems which is currently under development to meet these challenges is the Adaptive Gain Integrating Pixel Detector, AGIPD. It is a hybrid pixel-detector system with 1024 x 1024 p{sup +} pixels of dimensions 200 μm x 200 μm, made of 16 p{sup +}nn{sup +}- silicon sensors, each with 10.52 cm x 2.56 cm sensitive area and 500 μm thickness. The particular requirements for the AGIPD are a separation between noise and single photons down to energies of 5 keV, more than 10{sup 4} photons per pixel for a pulse duration of less than 100 fs, negligible pile-up at the EuXFEL repetition rate of 4.5 MHz, operation for X-ray doses up to 1 GGy, good efficiency for X-rays with energies between 5 and 20 keV, and minimal inactive regions at the edges. The main challenge in the sensor design is the required radiation tolerance and high operational voltage, which is required to reduce the so-called plasma effect. This requires a specially optimized sensor. The X-ray radiation damage results in a build-up of oxide charges and interface traps which lead to a reduction of the breakdown voltage, increased leakage current, increased interpixel capacitances and charge losses. Extensive TCAD simulations have been performed to understand the impact of X-ray radiation damage on the detector performance and optimize the sensor design. To take radiation damage into account in the simulation, radiation damage parameters have been determined on MOS capacitors and gate-controlled diodes as function of dose. The optimized sensor design was fabricated by SINTEF. Irradiation tests on test structures and sensors show that the sensor design is radiation hard and

  13. Radiation hardness of CMOS monolithic active pixel sensors manufactured in a 0.18 μm CMOS process

    Energy Technology Data Exchange (ETDEWEB)

    Linnik, Benjamin [Goethe-Universitaet Frankfurt (Germany); Collaboration: CBM-MVD-Collaboration

    2015-07-01

    CMOS Monolithic Active Pixels Sensors (MAPS) are considered as the technology of choice for various vertex detectors in particle and heavy-ion physics including the STAR HFT, the upgrade of the ALICE ITS, the future ILC detectors and the CBM experiment at FAIR. To match the requirements of those detectors, their hardness to radiation is being improved, among others in a joined research activity of the Goethe University Frankfurt and the IPHC Strasbourg. It was assumed that combining an improved high resistivity (1-8 kΩcm) sensitive medium with the features of a 0.18 μm CMOS process, is suited to reach substantial improvements in terms of radiation hardness as compared to earlier sensor designs. This strategy was tested with a novel generation of sensor prototypes named MIMOSA-32 and MIMOSA-34. We show results on the radiation hardness of those sensors and discuss its impact on the design of future vertex detectors.

  14. Development of Radiation-hard Bandgap Reference and Temperature Sensor in CMOS 130 nm Technology

    CERN Document Server

    Kuczynska, Marika; Bugiel, Szymon; Firlej, Miroslaw; Fiutowski, Tomasz; Idzik, Marek; Michelis, Stefano; Moron, Jakub; Przyborowski, Dominik; Swientek, Krzysztof

    2015-01-01

    A stable reference voltage (or current) source is a standard component of today's microelectronics systems. In particle physics experiments such reference is needed in spite of harsh ionizing radiation conditions, i.e. doses exceeding 100 Mrads and fluences above 1e15 n/cm2. After such radiation load a bandgap reference using standard p-n junction of bipolar transistor does not work properly. Instead of using standard p-n junctions, two enclosed layout transistor (ELTMOS) structures are used to create radiation-hard diodes: the ELT bulk diode and the diode obtained using the ELTMOS as dynamic threshold transistor (DTMOS). In this paper we have described several sub-1V references based on ELTMOS bulk diode and DTMOS based diode, using CMOS 130 nm process. Voltage references the structures with additional PTAT (Proportional To Absolute Temperature) output for temperature measurements were also designed. We present and compare post-layout simulations of the developed bandgap references and temperature sensors, w...

  15. Radiation hardness properties of full-3D active edge silicon sensors

    Czech Academy of Sciences Publication Activity Database

    Da Via, C.; Hasi, J.; Kenney, C.; Linhart, V.; Parker, S.; Slavíček, T.; Watts, S. J.; Bém, Pavel; Horažďovský, T.; Pospíšil, S.

    2008-01-01

    Roč. 587, 2-3 (2008), s. 243-249 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : silicon detectors * radiation hardness * 3D Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.019, year: 2008

  16. Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Šagátová, Andrea, E-mail: andrea.sagatova@stuba.sk [Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); University Centre of Electron Accelerators, Slovak Medical University, Ku kyselke 497, 911 06 Trenčín (Slovakia); Zaťko, Bohumír; Dubecký, František [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Ly Anh, Tu [Faculty of Applied Science, University of Technology VNU HCM, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Nečas, Vladimír; Sedlačková, Katarína; Pavlovič, Márius [Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Fülöp, Marko [University Centre of Electron Accelerators, Slovak Medical University, Ku kyselke 497, 911 06 Trenčín (Slovakia)

    2017-02-15

    Highlights: • Radiation hardness of SI GaAs detectors against gamma-rays, neutrons and electrons was compared. • Good agreement was achieved between the experimental results and displacement damage factor of different types of radiation. • CCE and FWHM first slightly improved (by 1–8%) and just then degraded with the cumulative dose. • An increase of detection efficiency with cumulative dose was observed. - Abstract: Radiation hardness of semi-insulating GaAs detectors against {sup 60}Co gamma-rays, fast neutrons and 5 MeV electrons was compared. Slight improvements in charge collection efficiency (CCE) and energy resolution in FWHM (Full Width at Half Maximum) were observed at low doses with all kinds of radiation followed by their degradation. The effect occurred at a dose of about 10 Gy of neutrons (CCE improved by 1%, FWHM by 5% on average), at 1 kGy of electrons (FWHM decreased by 3% on average) and at 10 kGy of gamma-rays (CCE raised by 5% and FWHM dropped by 8% on average), which is in agreement with the relative displacement damage of the used types of radiation. Gamma-rays of MeV energies are 1000-times less damaging than similar neutrons and electrons about 10-times more damaging than photons. On irradiating the detectors with neutrons and electrons, we observed a global increase in their detection efficiency, which was caused probably by enlargement of the active detector area as a consequence of created radiation defects in the base material. Detectors were still functional after a dose of 1140 kGy of ∼1 MeV photons, 104 kGy of 5 MeV electrons but only up to 0.576 kGy of fast (∼2 to 30 MeV) neutrons.

  17. Characterisation and application of radiation hard sensors for LHC and ILC

    International Nuclear Information System (INIS)

    Novgorodova, Olga

    2013-11-01

    The Large Hadron Collider (LHC) currently in operation intends to explore particle physics on the TeV scale. The International Linear Collider (ILC) and the Compact Linear Collider (CLIC) are being designed to measure the properties of particles discovered at the LHC with higher precision. Very forward detector systems at these machines are needed for the precise measurement of the luminosity and to approach full polar angle overage. In the current detector concepts for linear collider two electromagnetic calorimeters, Beam Calorimeter (BeamCal) and Luminosity Calorimeter (LumiCal), are foreseen. Both calorimeters are designed as sandwich calorimeters with tungsten absorber layers instrumented with finely segmented sensors. Due to a large amount of beamstrahlung remnants hitting BeamCal at the innermost radii, the sensors must withstand up to 1 MGy radiation dose per year. In this thesis two types of sensor materials were investigated: single crystal chemical vapour deposition diamonds (scCVDD) and gallium arsenide doped by chromium (GaAs:Cr). The very forward calorimeters ensure coverage for high energy electrons, positrons and photons down to very low polar angles. Within this thesis, simulation studies are presented for different beam parameters of the ILC. A new sensor segmentation was proposed to achieve better reconstruction efficiency of single high-energy electrons, positrons and photons on top of the beamstrahlung background. Only for a few years ago polycrystalline diamond sensors have been used for beam diagnostics in high-energy physics experiments. The Compact Muon Solenoid experiment, CMS, at the LHC is instrumented with several detectors for the Beam Conditions and Radiation Monitoring. The Fast Beam Conditions Monitor (BCM1F) is part of these systems. Here for the first time single crystal diamond sensors have been used. Eight detectors, comprising each a single crystal sensor and front-end electronics, are positioned around the beam pipe on both

  18. Characterisation and application of radiation hard sensors for LHC and ILC

    Energy Technology Data Exchange (ETDEWEB)

    Novgorodova, Olga

    2013-11-15

    The Large Hadron Collider (LHC) currently in operation intends to explore particle physics on the TeV scale. The International Linear Collider (ILC) and the Compact Linear Collider (CLIC) are being designed to measure the properties of particles discovered at the LHC with higher precision. Very forward detector systems at these machines are needed for the precise measurement of the luminosity and to approach full polar angle overage. In the current detector concepts for linear collider two electromagnetic calorimeters, Beam Calorimeter (BeamCal) and Luminosity Calorimeter (LumiCal), are foreseen. Both calorimeters are designed as sandwich calorimeters with tungsten absorber layers instrumented with finely segmented sensors. Due to a large amount of beamstrahlung remnants hitting BeamCal at the innermost radii, the sensors must withstand up to 1 MGy radiation dose per year. In this thesis two types of sensor materials were investigated: single crystal chemical vapour deposition diamonds (scCVDD) and gallium arsenide doped by chromium (GaAs:Cr). The very forward calorimeters ensure coverage for high energy electrons, positrons and photons down to very low polar angles. Within this thesis, simulation studies are presented for different beam parameters of the ILC. A new sensor segmentation was proposed to achieve better reconstruction efficiency of single high-energy electrons, positrons and photons on top of the beamstrahlung background. Only for a few years ago polycrystalline diamond sensors have been used for beam diagnostics in high-energy physics experiments. The Compact Muon Solenoid experiment, CMS, at the LHC is instrumented with several detectors for the Beam Conditions and Radiation Monitoring. The Fast Beam Conditions Monitor (BCM1F) is part of these systems. Here for the first time single crystal diamond sensors have been used. Eight detectors, comprising each a single crystal sensor and front-end electronics, are positioned around the beam pipe on both

  19. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    International Nuclear Information System (INIS)

    Miucci, A; Gonzalez-Sevilla, S; Ferrere, D; Iacobucci, G; Rosa, A La; Muenstermann, D; Gonella, L; Hemperek, T; Hügging, F; Krüger, H; Obermann, T; Wermes, N; Garcia-Sciveres, M; Backhaus, M; Capeans, M; Feigl, S; Nessi, M; Pernegger, H; Ristic, B; George, M

    2014-01-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

  20. Influence of transfer gate design and bias on the radiation hardness of pinned photodiode CMOS image sensors

    International Nuclear Information System (INIS)

    Goiffon, V.; Estribeau, M.; Cervantes, P.; Molina, R.; Magnan, P.; Gaillardin, M.

    2014-01-01

    The effects of Cobalt 60 gamma-ray irradiation on pinned photodiode (PPD) CMOS image sensors (CIS) are investigated by comparing the total ionizing dose (TID) response of several transfer gate (TG) and PPD designs manufactured using a 180 nm CIS process. The TID induced variations of charge transfer efficiency (CTE), pinning voltage, equilibrium full well capacity (EFWC), full well capacity (FWC) and dark current measured on the different pixel designs lead to the conclusion that only three degradation sources are responsible for all the observed radiation effects: the pre-metal dielectric (PMD) positive trapped charge, the TG sidewall spacer positive trapped charge and, with less influence, the TG channel shallow trench isolation (STI) trapped charge. The different FWC evolutions with TID presented here are in very good agreement with a recently proposed analytical model. This work also demonstrates that the peripheral STI is not responsible for the observed degradations and thus that the enclosed layout TG design does not improve the radiation hardness of PPD CIS. The results of this study also lead to the conclusion that the TG OFF voltage bias during irradiation has no influence on the radiation effects. Alternative design and process solutions to improve the radiation hardness of PPD CIS are discussed. (authors)

  1. Radiation hard 3D diamond sensors for vertex detectors at HL-LHC

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00336619; Quadt, Arnulf; Grosse-Knetter, Jörn; Weingarten, Jens

    Diamond is a good candidate to replace silicon as sensor material in the innermost layer of a tracking detector at HL-LHC, due to its high radiation tolerance. After particle fluences of $10^{16}\\,{\\rm protons/cm^2}$, diamond sensors are expected to achieve a higher signal to noise ratio than silicon. In order to use low grade polycrystalline diamonds as sensors, electrodes inside the diamond bulk, so called 3D electrodes, are produced. Typically, this kind of diamond material has a lower charge collection distance (CCD) than higher grade diamond, which results in a decreased signal amplitude. With 3D electrodes it is possible to achieve full charge collection even in samples with low CCDs by decoupling the spacing of the electrodes from the thickness of the diamond bulk. The electrodes are produced using a femtosecond laser, which changes the phase of the diamond material. The phase changed material is conductive and identified as nanocrystalline graphite using Raman spectroscopy. Due to a crater like struct...

  2. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    CERN Document Server

    Miucci, A; Hemperek, T.; Hügging, F.; Krüger, H.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Backhaus, M.; Capeans, M.; Feigl, S.; Nessi, M.; Pernegger, H.; Ristic, B.; Gonzalez-Sevilla, S.; Ferrere, D.; Iacobucci, G.; Rosa, A.La; Muenstermann, D.; George, M.; Grosse-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.; Kreidl, C.; Peric, I.; Breugnon, P.; Pangaud, P.; Godiot-Basolo, S.; Fougeron, D.; Bompard, F.; Clemens, J.C.; Liu, J; Barbero, M.; Rozanov, A

    2014-01-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI. doi:10.1088/1748-0221/9/05/C050642014 JINST 9 C05064 A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation a...

  3. Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

    Science.gov (United States)

    Pohl, D.-L.; Hemperek, T.; Caicedo, I.; Gonella, L.; Hügging, F.; Janssen, J.; Krüger, H.; Macchiolo, A.; Owtscharenko, N.; Vigani, L.; Wermes, N.

    2017-06-01

    Pixel sensors using 8'' CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 × 1015 neq cm-2. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.

  4. A measurement of Lorentz Angle of radiation-hard Pixel Sensors

    CERN Document Server

    Aleppo, M

    2001-01-01

    Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown.

  5. Radiation sensor

    International Nuclear Information System (INIS)

    Brown, W.L.; Geronime, R.L.

    1977-01-01

    Radiation sensor and thermocouple, respectively, which can be used for reactor in-core instrumentation. The radiation sensor consists of an inconel conductor wire and rhodium emitter wire, the thermocouple of two intertwined alumel or chromel wires. Both are arranged in the center of a metal tube relative to which they are separated by an insulator made of SiO 2 fibers. This insulator is first introduced as a loose fabric between the radiation sensor and the thermocouple, respectively, and the metal tube and then compacted to a density of 35-73% of pure SiO 2 by drawing the tube. There is no need for soldering or welding. The insulation resistivity at room temperature ist between 10 14 and 10 15 ohms. (ORU) [de

  6. Development of beam halo monitors for the European XFEL using radiation hard sensors and demonstration of the technology at FLASH

    International Nuclear Information System (INIS)

    Ignatenko, Alexandr

    2015-05-01

    The European X-Ray Free-Electron Laser (E-XFEL), currently under construction in Hamburg, Germany, is intended to be an international linear accelerator (linac) based user facility. Its electron beam can carry maximal average power of 600 kW. A beam with such a high power needs to be carefully transmitted through the machine and safely dumped after utilization. This is supported by various diagnostics tools. A Beam Halo Monitor (BHM) based on synthetic diamond and sapphire sensors has been designed. Diamond sensors are developed by the company element6 for the detection of ionizing radiation and used previously elsewhere. Sapphire sensors are in this thesis applied for the first time. The BHM concept has been applied already at the Free-electron Laser in Hamburg (FLASH). A module with four diamond and four sapphire sensors was designed, installed inside the beam pipe, commissioned, calibrated and has been successfully operated for 4 years. The system contributed significantly to safe and efficient operation of FLASH. Both types of the sensors for the BHM were characterized. Measurements of radiation tolerance are done in a 10 MeV electron beam for polycrystalline CVD (pCVD) diamond sensors for the first time up to a dose of 10 MGy and for sapphire sensors up to 5 MGy. The charge collection efficiency (CCE) drops as a function of the absorbed dose, is however still sufficient for application as a BHM. To improve a main sensor characteristic, the charge collection efficiency, for sapphire sensors the impurity concentration was reduced and different growth techniques were compared. Finally, charge collection efficiency of about 5 % for a bias voltage of 500 V was reached. The BHM concept for the XFEL is designed and in the construction phase.

  7. CMOS optimization for radiation hardness

    International Nuclear Information System (INIS)

    Derbenwick, G.F.; Fossum, J.G.

    1975-01-01

    Several approaches to the attainment of radiation-hardened MOS circuits have been investigated in the last few years. These have included implanting the SiO 2 gate insulator with aluminum, using chrome-aluminum layered gate metallization, using Al 2 O 3 as the gate insulator, and optimizing the MOS fabrication process. Earlier process optimization studies were restricted primarily to p-channel devices operating with negative gate biases. Since knowledge of the hardness dependence upon processing and design parameters is essential in producing hardened integrated circuits, a comprehensive investigation of the effects of both process and design optimization on radiation-hardened CMOS integrated circuits was undertaken. The goals are to define and establish a radiation-hardened processing sequence for CMOS integrated circuits and to formulate quantitative relationships between process and design parameters and the radiation hardness. Using these equations, the basic CMOS design can then be optimized for radiation hardness and some understanding of the basic physics responsible for the radiation damage can be gained. Results are presented

  8. Recent results on CVD diamond radiation sensors

    Science.gov (United States)

    Weilhammer, P.; Adam, W.; Bauer, C.; Berdermann, E.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; v. d. Eijk, R.; van Eijk, B.; Fallou, A.; Fish, D.; Fried, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knopfle, K. T.; Krammer, M.; Manfredi, P. F.; Meier, D.; LeNormand; Pan, L. S.; Pernegger, H.; Pernicka, M.; Plano, R.; Re, V.; Riester, J. L.; Roe, S.; Roff; Rudge, A.; Schieber, M.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; RD 42 Collaboration

    1998-02-01

    CVD diamond radiation sensors are being developed for possible use in trackers in the LHC experiments. The diamond promises to be radiation hard well beyond particle fluences that can be tolerated by Si sensors. Recent results from the RD 42 collaboration on charge collection distance and on radiation hardness of CVD diamond samples will be reported. Measurements with diamond tracking devices, both strip detectors and pixel detectors, will be discussed. Results from beam tests using a diamond strip detector which was read out with fast, 25 ns shaping time, radiation-hard pipeline electronics will be presented.

  9. Wireless radiation sensor

    Science.gov (United States)

    Lamberti, Vincent E.; Howell, Jr, Layton N.; Mee, David K.; Kress, Reid L.

    2016-08-09

    Disclosed is a sensor for detecting radiation. The sensor includes a ferromagnetic metal and a radiation sensitive material coupled to the ferromagnetic metal. The radiation sensitive material is operable to change a tensile stress of the ferromagnetic metal upon exposure to radiation. The radiation is detected based on changes in the magnetic switching characteristics of the ferromagnetic metal caused by the changes in the tensile stress.

  10. Impact of aging on radiation hardness

    International Nuclear Information System (INIS)

    Shaneyfelt, M.R.; Winokur, P.S.; Fleetwood, D.M.

    1997-01-01

    Burn-in effects are used to demonstrate the potential impact of thermally activated aging effects on functional and parametric radiation hardness. These results have implications on hardness assurance testing. Techniques for characterizing aging effects are proposed

  11. Development of radiation hard scintillators

    International Nuclear Information System (INIS)

    Markley, F.; Woods, D.; Pla-Dalmau, A.; Foster, G.; Blackburn, R.

    1992-05-01

    Substantial improvements have been made in the radiation hardness of plastic scintillators. Cylinders of scintillating materials 2.2 cm in diameter and 1 cm thick have been exposed to 10 Mrads of gamma rays at a dose rate of 1 Mrad/h in a nitrogen atmosphere. One of the formulations tested showed an immediate decrease in pulse height of only 4% and has remained stable for 12 days while annealing in air. By comparison a commercial PVT scintillator showed an immediate decrease of 58% and after 43 days of annealing in air it improved to a 14% loss. The formulated sample consisted of 70 parts by weight of Dow polystyrene, 30 pbw of pentaphenyltrimethyltrisiloxane (Dow Corning DC 705 oil), 2 pbw of p-terphenyl, 0.2 pbw of tetraphenylbutadiene, and 0.5 pbw of UVASIL299LM from Ferro

  12. Radiation hardness of CMS pixel barrel modules

    CERN Document Server

    Rohe, T; Erdmann, W; Kästli, H C; Khalatyan, S; Meier, B; Radicci, V; Sibille, J

    2010-01-01

    Pixel detectors are used in the innermost part of the multi purpose experiments at LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of all detector components has thoroughly been tested up to the fluences expected at the LHC. In case of an LHC upgrade, the fluence will be much higher and it is not yet clear how long the present pixel modules will stay operative in such a harsh environment. The aim of this study was to establish such a limit as a benchmark for other possible detector concepts considered for the upgrade. As the sensors and the readout chip are the parts most sensitive to radiation damage, samples consisting of a small pixel sensor bump-bonded to a CMS-readout chip (PSI46V2.1) have been irradiated with positive 200 MeV pions at PSI up to 6E14 Neq and with 21 GeV protons at CERN up to 5E15 Neq. After irradiation the response of the system to beta particles from a Sr-90 source w...

  13. Radiation hardness of CMS pixel barrel modules

    International Nuclear Information System (INIS)

    Rohe, T.; Bean, A.; Erdmann, W.; Kaestli, H.-C.; Khalatyan, S.; Meier, B.; Radicci, V.; Sibille, J.

    2010-01-01

    Pixel detectors are used in the innermost part of the multi purpose experiments at the LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of all detector components has been thoroughly tested up to the fluences expected at the LHC. In case of an LHC upgrade, the fluence will be much higher and it is not yet clear how long the present pixel modules will stay operative in such a harsh environment. The aim of this study was to establish such a limit as a benchmark for other possible detector concepts considered for the upgrade. As the sensors and the readout chip are the parts most sensitive to radiation damage, samples consisting of a small pixel sensor bump-bonded to a CMS-readout chip (PSI46V2.1) have been irradiated with positive 200 MeV pions at PSI up to 6x10 14 n eq /cm 2 and with 21 GeV protons at CERN up to 5x10 15 n eq /cm 2 . After irradiation the response of the system to beta particles from a 90 Sr source was measured to characterise the charge collection efficiency of the sensor. Radiation induced changes in the readout chip were also measured. The results show that the present pixel modules can be expected to be still operational after a fluence of 2.8x10 15 n eq /cm 2 . Samples irradiated up to 5x10 15 n eq /cm 2 still see the beta particles. However, further tests are needed to confirm whether a stable operation with high particle detection efficiency is possible after such a high fluence.

  14. RD50 Collaboration overview: Development of new radiation hard detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kuehn, S., E-mail: susanne.kuehn@cern.ch

    2016-07-11

    Silicon sensors are widely used as tracking detectors in high energy physics experiments. This results in several specific requirements like radiation hardness and granularity. Therefore research for highly performing silicon detectors is required. The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for application in high luminosity collider experiments. Extensive research is ongoing in different fields since 2001. The collaboration investigates both defect and material characterization, detector characterization, the development of new structures and full detector systems. The report gives selected results of the collaboration and places an emphasis on the development of new structures, namely 3D devices, CMOS sensors in HV technology and low gain avalanche detectors. - Highlights: • The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for high luminosity collider experiments. • The collaboration investigates defect, material and detector characterization, the development of new structures and full detector systems. • Results of measured data of n-in-p type sensors allow recommendations for silicon tracking detectors at the HL-LHC. • The charge multiplication effect was investigated to allow its exploitation and resulted in new structures like LGAD sensors. • New sensor types like slim and active edge sensors, 3D detectors, and lately HVCMOS devices were developed in the active collaboration.

  15. Radiation-Hard Quartz Cerenkov Calorimeters

    International Nuclear Information System (INIS)

    Akgun, U.; Onel, Y.

    2006-01-01

    New generation hadron colliders are going to reach unprecedented energies and radiation levels. Quartz has been identified as a radiation-hard material that can be used for Cerenkov calorimeters of the future experiments. We report from the radiation hardness tests performed on quartz fibers, as well as the characteristics of the quartz fiber and plate Cerenkov calorimeters that have been built, designed, and proposed for the CMS experiment

  16. Wireless passive radiation sensor

    Science.gov (United States)

    Pfeifer, Kent B; Rumpf, Arthur N; Yelton, William G; Limmer, Steven J

    2013-12-03

    A novel measurement technique is employed using surface acoustic wave (SAW) devices, passive RF, and radiation-sensitive films to provide a wireless passive radiation sensor that requires no batteries, outside wiring, or regular maintenance. The sensor is small (<1 cm.sup.2), physically robust, and will operate unattended for decades. In addition, the sensor can be insensitive to measurement position and read distance due to a novel self-referencing technique eliminating the need to measure absolute responses that are dependent on RF transmitter location and power.

  17. Radiation hard memory cell and array thereof

    International Nuclear Information System (INIS)

    Gunckel, T.L. II; Rovell, A.; Nielsen, R.L.

    1978-01-01

    A memory cell configuration that is implemented to be relatively hard to the adverse effects of a nuclear event is discussed. The presently disclosed memory cell can be interconnected with other like memory cells to form a high speed radiation hard register file. Information is selectively written into and read out of a memory cell comprising the register file, which memory cell preserves previously stored data without alteration in the event of exposure to high levels of nuclear radiation

  18. Radiation-activated sensor

    International Nuclear Information System (INIS)

    Nirschl, J.C.

    1976-01-01

    A sensing system is described for use in a remote location which detects electromagnetic radiation energy, the system being self-activating, turning itself automatically on and off, as a function of radiation intensity across the detector. In essence, when no radiation is present across the detector, the system will consume no power, the switches and MOSFET discriminator being essentially in an ''off'' position. Radiation across the detector provides a current to an input capacitance which when charged turns on the switch and the MOSFET discriminator. A switch driver produces an output pulse showing the presence of radiation; the system then shuts off awaiting the next radiation input. Since the sensor system uses virtually no power unless radiation is present, it is ideally suited for use in remote environments where battery power and size is a predominant consideration. 2 claims, 3 drawing figures

  19. Radiation hardness of undoped BGO crystals

    International Nuclear Information System (INIS)

    Sahu, S.K.; Peng, K.C.; Huang, H.C.; Wang, C.H.; Chang, Y.H.; Hou, W.S.; Ueno, K.; Chou, F.I.; Wei, Y.Y.

    1997-01-01

    We measured the radiation hardness of undoped BGO crystals from two different manufacturers. Such crystals are proposed to be used in a small-angle calorimeter of the BELLE detector of the KEK B-factory. Transparency and scintillation light output of the crystals were monitored to see the effect of radiation damage. The crystals show considerable radiation hardness up to 10.2 Mrad equivalent dose, which is much higher than the maximum expected dosage of 500 krad per year of running at BELLE. (orig.)

  20. Radiation hard cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

    2002-01-01

    It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

  1. Radiation hardness assurances categories for COTS technologies

    International Nuclear Information System (INIS)

    Hash, G.L.; Shaneyfelt, M.R.; Sexton, F.W.; Winokur, P.S.

    1997-01-01

    A comparison of the radiation tolerance of three commercial, and one radiation hardened SRAM is presented for four radiation environments. This work has shown the difficulty associated with strictly categorizing a device based solely on its radiation response, since its category depends on the specific radiation environment considered. For example, the 3.3-V Paradigm SRAM could be considered a radiation-tolerant device except for its SEU response. A more useful classification depends on the methods the manufacturer uses to ensure radiation hardness, i.e. whether specific design and process techniques have been used to harden the device. Finally, this work has shown that burned-in devices may fail functionally as much as 50% lower in total dose environments than non-burned-in devices. No burn-in effect was seen in dose-rate upset, latchup, or SEE environments. The user must ensure that total dose lot acceptance testing was performed on burned-in devices

  2. Development of fast and radiation hard Monolithic Active Pixel Sensors (MAPS) optimized for open charm meson detection with the CBM experiment

    International Nuclear Information System (INIS)

    Deveaux, M.

    2008-03-01

    The adequacy of CMOS MAPS (Monolithic Active Pixel Sensors) to provide high spatial resolution while submitted to high particle flux and radiation level is assessed in this work. A 55 Fe-source and minimum ionizing particle beams were used to study the performances of MAPS being irradiated either with neutrons and X-rays. As expected, ionizing radiation dominantly causes an increase of the leakage current of the pixels, which translates into increased shot noise. Non-ionizing radiation generates increases in terms of leakage currents but can reduce substantially the lifetime of the signal electrons in the pixel. The latter was found to cause a dramatic drop of the signal if the lifetime of the electrons shrinks below the time required for charge collection. The performances of irradiated detectors were studied as a function of the operation conditions, i.e. in terms of temperature and integration time of the pixel. It was demonstrated that running the detectors at low temperature ( 7 collisions per second, would shrink the lifetime of the detector to a few days. It was however demonstrated that a balanced configuration exists where, for lower beam interaction rate, enough D 0 -mesons can be collected and analyzed to investigate their production properties with a satisfactory sensitivity. (A.C.)

  3. Optical fiber composition and radiation hardness

    International Nuclear Information System (INIS)

    Wall, J.A.; Loretz, T.J.

    1982-01-01

    Germanium phosphosilicate and germanium borosilicate fibers doped with cerium were fabricated and tested for their responses to steady-state Co-60 radiation at -55 C, +20 C and +125 C. A fiber with germanium, boron and phosphorous in the silicate core and doped with antimony in the core and clad was similarly tested. All of the fibers showed significant improvements in radiation hardness at 20 C compared to undoped fibers of the same base composition. At -55 C, however, all except the cerium doped germanium phosphosilicate were very radiation sensitive and also showed increases in the rate of induced loss at +125 C. The cerium doped germanium phosphosilicate fiber showed virtually no change in radiation sensitivity at the temperature extremes and could prove useful in applications requiring relatively short lengths of fiber

  4. Development of high temperature, radiation hard detectors based on diamond

    Energy Technology Data Exchange (ETDEWEB)

    Metcalfe, Alex, E-mail: Alex.Metcalfe@brunel.ac.uk [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Fern, George R. [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Hobson, Peter R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Ireland, Terry; Salimian, Ali; Silver, Jack [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Smith, David R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Lefeuvre, Gwenaelle [Micron Semiconductor Ltd., Lancing BN15 8 SJ (United Kingdom); Saenger, Richard [Schlumberger Limited, 91240 Clamart (France)

    2017-02-11

    Single crystal CVD diamond has many desirable properties compared to current, well developed, detector materials; exceptional radiation, chemical and physical hardness, chemical inertness, low Z (close to human tissue, good for dosimetry), wide bandgap and an intrinsic pathway to fast neutron detection through the {sup 12}C(n,α){sup 9}Be reaction. However effective exploitation of these properties requires development of a suitable metallisation scheme to give stable contacts for high temperature applications. To best utilise available processing techniques to optimise sensor response through geometry and conversion media configurations, a reliable model is required. This must assess the performance in terms of spectral response and overall efficiency as a function of detector and converter geometry. The same is also required for proper interpretation of experimental data. Sensors have been fabricated with varying metallisation schemes indented to permit high temperature operation; Present test results indicate that viable fabrication schemes for high temperature contacts have been developed and present modelling results, supported by preliminary data from partners indicate simulations provide a useful representation of response. - Highlights: • Radiation sensors using diamond as the sensitive volume have been constructed. • Functionality of these sensors with minimal degradation has been confirmed at 100 °C. • Sensitisation to thermal neutrons by addition of conversion layers has been modelled. • Modelling suggests 4× efficiency improvements from 3d converter-substrate interfaces.

  5. Tactile sensor of hardness recognition based on magnetic anomaly detection

    Science.gov (United States)

    Xue, Lingyun; Zhang, Dongfang; Chen, Qingguang; Rao, Huanle; Xu, Ping

    2018-03-01

    Hardness, as one kind of tactile sensing, plays an important role in the field of intelligent robot application such as gripping, agricultural harvesting, prosthetic hand and so on. Recently, with the rapid development of magnetic field sensing technology with high performance, a number of magnetic sensors have been developed for intelligent application. The tunnel Magnetoresistance(TMR) based on magnetoresistance principal works as the sensitive element to detect the magnetic field and it has proven its excellent ability of weak magnetic detection. In the paper, a new method based on magnetic anomaly detection was proposed to detect the hardness in the tactile way. The sensor is composed of elastic body, ferrous probe, TMR element, permanent magnet. When the elastic body embedded with ferrous probe touches the object under the certain size of force, deformation of elastic body will produce. Correspondingly, the ferrous probe will be forced to displace and the background magnetic field will be distorted. The distorted magnetic field was detected by TMR elements and the output signal at different time can be sampled. The slope of magnetic signal with the sampling time is different for object with different hardness. The result indicated that the magnetic anomaly sensor can recognize the hardness rapidly within 150ms after the tactile moment. The hardness sensor based on magnetic anomaly detection principal proposed in the paper has the advantages of simple structure, low cost, rapid response and it has shown great application potential in the field of intelligent robot.

  6. Radiation-hard silicon photonics for high energy physics and beyond

    CERN Multimedia

    CERN. Geneva

    2016-01-01

    Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

  7. Radiation hard silicon microstrip detectors for Tevatron experiments

    International Nuclear Information System (INIS)

    Korjenevski, Sergey

    2004-01-01

    The Silicon Microstrip Tracking detectors at the CDF and D0 experiments have now been operating for almost three years at Fermilab. These detectors were designed originally for an integrated luminosity of 2fb -1 . As the expected luminosity for Run IIb at the Tevatron collider was initially envisioned to reach 15fb -1 , radiation tolerances of both devices were revisited, culminating in proposals for new systems. With reduced expectations for total luminosity at ∼6fb -1 , the full detector-replacement projects were terminated. The CDF detector is expected nevertheless to cope efficiently with the lower anticipated dose, however, the D0 experiment is planning a smaller-scale project: a Layer-0 (L0) upgrade of the silicon tracker (D0SMT). The new device will fit between the beam line and the inner layer of the current Tracker. Built of single-sided sensors, this upgrade is expected to perform well in the harsh radiation environment, and be able to withstand an integrated luminosity of 15fb -1 . Prototypes of Run IIb sensors were irradiated using 10MeV protons at the tandem Van de Graaff at the James R. McDonald Laboratory at Kansas State University. A fit to the 10MeV proton data yields a damage parameter αp=11x10-17Acm. This is consistent with results from RD48 (αp=9.9x10-17Acm). The scaling of damage to 1MeV neutron fluence uses a hardness factor (κ) derived from the non-ionizing components of the energy loss (NEIL). NEIL predicts a hardness factor of 3.87 for 10MeV protons. We obtained an experimental value of this factor of 2.54, or 34% smaller than scaling predictions from NEIL

  8. Radiation hard silicon particle detectors for HL-LHC—RD50 status report

    Energy Technology Data Exchange (ETDEWEB)

    Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

    2017-02-11

    It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

  9. Radiation hard solar cell and array

    International Nuclear Information System (INIS)

    Russell, R.L.

    1975-01-01

    A power generating solar cell for a spacecraft solar array is hardened against transient response to nuclear radiation while permitting normal operation of the cell in a solar radiation environment by shunting the cell with a second solar cell whose contacts are reversed relative to the power cell to form a cell module, exposing the power cell only to the solar radiation in a solar radiation environment to produce an electrical output at the module terminals, and exposing both cells to the nuclear radiation in a nuclear radiation environment so that the radiation induced currents generated by the cells suppress one another

  10. Process and devices of detection of hard electromagnetic or particle radiations using a superconducting element

    International Nuclear Information System (INIS)

    Drukier, A.K.; Valette, Claude; Waysand, Georges.

    1975-01-01

    The invention relates to processes and systems for the detection of hard electromagnetic or particle radiations and the sensors fitted to these systems. 'Hard radiations' means those whose energy is greater than a variable threshold, depending on the applications, but always more than 5 keV. The use of these sensors and the associated systems can therefore be envisaged in radiography and also in emission gammagraphy in the biological, anatomic and medical fields. In these processes, in order to detect a photon or a radiation particle, use is made of the transition phenomenon of a homogeneous grain of superconducting material of the first kind, from the metastable superconducting state to the normal state, under the effect of a photoelectron ejected by the impact of the photon or of the particle on the grain of superconducting material [fr

  11. Radiation hardness of new Kuraray double cladded optical fibers

    International Nuclear Information System (INIS)

    Bedeschi, F.; Menzione, A.; Budagov, Yu.; Chirikov-Zorin, I.; Solov'ev, A.; Turchanovich, L.; Vasil'chenko, V.

    1996-01-01

    The radiation hardness of the new plastic scintillating and clear fibers irradiated by 137 Cs γ-flux and by pulsed reactor fast neutrons were investigated. All the studied fibers were of S-type (with S=70) and had a double cladding. Optical fibers degradation study after irradiation shows that the level of radiation hardness lower that what is expected from results of previous studies. 9 refs., 6 figs

  12. Sustainably Sourced, Thermally Resistant, Radiation Hard Biopolymer

    Science.gov (United States)

    Pugel, Diane

    2011-01-01

    This material represents a breakthrough in the production, manufacturing, and application of thermal protection system (TPS) materials and radiation shielding, as this represents the first effort to develop a non-metallic, non-ceramic, biomaterial-based, sustainable TPS with the capability to also act as radiation shielding. Until now, the standing philosophy for radiation shielding involved carrying the shielding at liftoff or utilizing onboard water sources. This shielding material could be grown onboard and applied as needed prior to different radiation landscapes (commonly seen during missions involving gravitational assists). The material is a bioplastic material. Bioplastics are any combination of a biopolymer and a plasticizer. In this case, the biopolymer is a starch-based material and a commonly accessible plasticizer. Starch molecules are composed of two major polymers: amylase and amylopectin. The biopolymer phenolic compounds are common to the ablative thermal protection system family of materials. With similar constituents come similar chemical ablation processes, with the potential to have comparable, if not better, ablation characteristics. It can also be used as a flame-resistant barrier for commercial applications in buildings, homes, cars, and heater firewall material. The biopolymer is observed to undergo chemical transformations (oxidative and structural degradation) at radiation doses that are 1,000 times the maximum dose of an unmanned mission (10-25 Mrad), indicating that it would be a viable candidate for robust radiation shielding. As a comparison, the total integrated radiation dose for a three-year manned mission to Mars is 0.1 krad, far below the radiation limit at which starch molecules degrade. For electron radiation, the biopolymer starches show minimal deterioration when exposed to energies greater than 180 keV. This flame-resistant, thermal-insulating material is non-hazardous and may be sustainably sourced. It poses no hazardous

  13. Development of radiation hardness components for ITER remote maintenance

    Energy Technology Data Exchange (ETDEWEB)

    Obara, Kenjiro; Kakudate, Satoshi; Oka, Kiyoshi; Ito, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Yagi, Toshiaki; Morita, Yousuke

    1998-04-01

    In the ITER, in-vessel remote handling is required to assemble and maintain in-vessel components in DT operations. Since in-vessel remote handling systems must operate under intense gamma ray radiation exceeding 30 kGy/h, their components must have sufficiently high radiation hardness to allow maintenance long enough in ITER in-vessel environments. Thus, extensive radiation tests and quality improvement, including optimization of material compositions, have been conducted through the ITER R and D program to develop radiation hardness components that meet radiation doses from 10 to 100 MGy at 10 kGy/h. This paper presents the latest on radiation hardness component development conducted by the Japan Home Team as a contribution to the ITER. The remote handling components tested are categorized for use in robotic or viewing systems, or as common components. Radiation tests have been conducted on commercially available products for screening, on modified products, and on new products to improve the radiation hardness. (author)

  14. Development of radiation hardness components for ITER remote maintenance

    International Nuclear Information System (INIS)

    Obara, Kenjiro; Kakudate, Satoshi; Oka, Kiyoshi; Ito, Akira; Yagi, Toshiaki; Morita, Yousuke

    1998-01-01

    In the ITER, in-vessel remote handling is required to assemble and maintain in-vessel components in DT operations. Since in-vessel remote handling systems must operate under intense gamma ray radiation exceeding 30 kGy/h, their components must have sufficiently high radiation hardness to allow maintenance long enough in ITER in-vessel environments. Thus, extensive radiation tests and quality improvement, including optimization of material compositions, have been conducted through the ITER R and D program to develop radiation hardness components that meet radiation doses from 10 to 100 MGy at 10 kGy/h. This paper presents the latest on radiation hardness component development conducted by the Japan Home Team as a contribution to the ITER. The remote handling components tested are categorized for use in robotic or viewing systems, or as common components. Radiation tests have been conducted on commercially available products for screening, on modified products, and on new products to improve the radiation hardness. (author)

  15. Testing the radiation hardness of lead tungstate scintillating crystals

    CERN Document Server

    Shao, M; Li Chuan; Chen, H; Xu, Z Z; Wang, Z M

    2000-01-01

    Large Hadron Collider operation will produce a high radiation background. PbWO/sub 4/ crystals are selected as scintillators for the CMS electromagnetic calorimeter. To reach the precise requirement for energy measurements, a strict requirement for the radiation hardness is needed. In this paper, we present a method for evaluating the radiation hardness and its measurement. Results for several full size (23 cm length) lead tungstate crystals under Co/sup 60/ gamma - ray irradiation are given, investigating the light yield loss and its longitudinal uniformity. (8 refs).

  16. Hard facts for radiation curing of elastomers

    International Nuclear Information System (INIS)

    Lyall, D.J.

    1984-01-01

    The subject is covered under the headings: introduction; outline of chemistry (differences between conventional and radiation curing); compounding; green strength; response of rubbers to electron beam treatment; electron beam cured applications:(a) wire and cable applications;(b) rubber tyre components;(c) heat shrinkable materials;(d) roofing materials. (U.K.)

  17. Development of radiation hard components for remote maintenance

    International Nuclear Information System (INIS)

    Oka, Kiyoshi; Obara, Kenjiro; Kakudate, Satoshi; Tominaga, Ryuichiro; Akada, Tamio; Morita, Hirosuke.

    1997-01-01

    In International Thermonuclear Experimental Reactor (ITER), in-vessel remote-handling is inevitably required to assemble and maintain activated in-vessel components due to D-T operation. The components of the in-vessel remote-handling system must have sufficient radiation hardness to allow for operation under an intense gamma-ray radiation of over 30 kGy/h for periods up to more than 1,000 hours. To this end, extensive irradiation tests and quality improvements including the optimization of material composition have been conducted through the ITER R and D program in order to develop radiation hard components which satisfy radiation doses from 10 MGy to 100 MGy at the dose rate of 10 kGy/h. This paper outlines the latest status of the radiation hard component development that has been conducted as the Japan Home Team's contribution to ITER. The remote-handling components tested are categorized into either robotics, viewing systems or common components. The irradiation tests include commercial base products for screening both modified and newly developed products to improve their radiation hardness. (author)

  18. BaYb2F8, a new radiation hard Cherenkov radiator for electromagnetic calorimeters

    International Nuclear Information System (INIS)

    Aseev, A.A.; Devitsin, E.G.; Komar, A.A.; Kozlov, V.A.; Hovsepyan, Yu.I.; Potashov, S.Yu.; Sokolovsky, K.A.; Uvarova, T.V.; Vasilchenko, V.G.

    1992-01-01

    Radiation hardness and optical properties of a new Cherenkov radiator, heavy fluoride BaYb 2 F 8 doped with various elements, have been studied. The above mentioned crystal has the density of 7 g/cm 3 , the radiation length is 1.28 cm and the Moliere radius 2.44 cm. High radiation hardness has been demonstrated for BaYb 2 F 8 doped with Tm, Pr, Tb. (orig.)

  19. The transient radiation effects and hardness of programmed device

    International Nuclear Information System (INIS)

    Du Chuanhua; Xu Xianguo; Zhao Hailin

    2014-01-01

    A review and summary of research and development in the investigation of transient ionizing radiation effects in device and cirviut is presented. The transient ionizing radiation effects in two type of programmed device, that's 32 bit Microcontroller and antifuse FPGA, were studied. The expeiment test data indicate: The transient ionizing radiation effects of 32 bit Microcontroller manifested self-motion restart and Latchup, the Latchup threshold was 5 × 10"7 Gy (Si)/s. The transient ionizing radiation effects of FPGA was reset, no Latchup. The relationship of circuit effects to physical mechanisms was analized. A new method of hardness in circiut design was put forward. (authors)

  20. Capillary discharge sources of hard UV radiation

    International Nuclear Information System (INIS)

    Cachoncinlle, C; Dussart, R; Robert, E; Goetze, S; Pons, J; Mohanty, S R; Viladrosa, R; Fleurier, C; Pouvesle, J M

    2002-01-01

    We developed and studied three different extreme ultraviolet (EUV) capillary discharge sources either dedicated to the generation of coherent or incoherent EUV radiation. The CAPELLA source has been developed especially as an EUV source for the metrology at 13.4 nm. With one of these sources, we were able to produce gain on the Balmer-Hα (18.22 nm) and Hβ (13.46 nm) spectral lines in carbon plasma. By injecting 70 GW cm -3 we measured gain-length products up to 1.62 and 3.02 for the Hα and Hβ, respectively optimization of the EUV capillary source CAPELLA led to the development of an EUV lamp which emits 2 mJ in the bandwidth of the MoSi mirror, per joule stored, per shot and in full solid angle. The wall-plug efficiency is 0.2%. Stability of this lamp is better than 4% and the lamp can operate at repetition rate of 50 Hz

  1. The influence of hard-baking temperature applied for SU8 sensor layer on the sensitivity of capacitive chemical sensor

    Science.gov (United States)

    Klanjšek Gunde, Marta; Hauptman, Nina; Maček, Marijan; Kunaver, Matjaž

    2009-06-01

    SU8, the near-UV photosensitive epoxy-based polymer was used as a sensor layer in the capacitive chemical sensor, ready for integration with a generic double-metal CMOS technology. It was observed that the response of the sensor slowly increases with the temperature applied in hard-baking process as long as it remains below 300°C. At this temperature the response of the sensor abruptly increases and becomes almost threefold. It was shown that fully crosslinked structure of the sensor layer becomes opened and disordered when the sensor is hard-baked at temperatures between 300°C and 320°C, that is, still well below the degradation temperature of the polymer. These changes in chemical structure were analyzed by Fourier-transform infrared spectroscopy. The temperature-dependent changes of the sensor layer structure enable one to prepare a combination of capacitive chemical sensors with good discrimination between some volatile organic compounds.

  2. Ways of providing radiation resistance of magnetic field semiconductor sensors

    CERN Document Server

    Bolshakova, I A; Holyaka, R; Matkovskii, A; Moroz, A

    2001-01-01

    Hall magnetic field sensors resistant to hard ionizing irradiation are being developed for operation under the radiation conditions of space and in charged particle accelerators. Radiation resistance of the sensors is first determined by the properties of semiconductor materials of sensitive elements; we have used microcrystals and thin layers of III-V semiconductors. Applying complex doping by rare-earth elements and isovalent impurities in certain proportions, we have obtained magnetic field sensors resistant to irradiation by fast neutrons and gamma-quanta. Tests of their radiation resistance were carried out at IBR-2 at the Joint Institute for Nuclear Research (Dubna). When exposed to neutrons with E=0.1-13 MeV and intensity of 10 sup 1 sup 0 n cm sup - sup 2 s sup - sup 1 , the main parameter of the sensors - their sensitivity to magnetic fields - changes by no more than 0.1% up to fluences of 10 sup 1 sup 4 n cm sup - sup 2. Further improvement of radiation resistance of sensor materials is expected by ...

  3. UV radiation hardness of silicon inversion layer solar cells

    International Nuclear Information System (INIS)

    Hezel, R.

    1990-01-01

    For full utilization of the high spectral response of inversion layer solar cells in the very-short-wavelength range of the solar spectrum sufficient ultraviolet-radiation hardness is required. In addition to the charge-induced passivation achieved by cesium incorporation into the silicon nitride AR coating, in this paper the following means for further drastic reduction of UV light-induced effects in inversion layer solar cells without encapsulation are introduced and interpretations are given: increasing the nitride deposition temperature, silicon surface oxidation at low temperatures, and texture etching and using higher substrate resistivities. High UV radiation tolerance and improvement of the cell efficiency could be obtained simultaneously

  4. Review of the development of diamond radiation sensors

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J. E-mail: josel.hrubec@cern.ch; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

    1999-09-11

    Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 {mu}m have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9x10{sup 15} {pi} cm{sup -2}, 5x10{sup 15} p cm{sup -2} and 1.35x10{sup 15} n cm{sup -2}, respectively. Diamond micro-strip detectors with 50 {mu}m pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2x4 cm{sup 2} surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out chip prototypes for ATLAS and CMS. Beam test results are shown from a diamond detector bump-bonded to an ATLAS prototype read-out. They demonstrate a 98% bump-bonding efficiency and a digital resolution in both dimensions. (author)

  5. Review of the development of diamond radiation sensors

    International Nuclear Information System (INIS)

    Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.

    1999-01-01

    Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 μm have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9x10 15 π cm -2 , 5x10 15 p cm -2 and 1.35x10 15 n cm -2 , respectively. Diamond micro-strip detectors with 50 μm pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2x4 cm 2 surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out chip prototypes for ATLAS and CMS. Beam test results are shown from a diamond detector bump-bonded to an ATLAS prototype read-out. They demonstrate a 98% bump-bonding efficiency and a digital resolution in both dimensions. (author)

  6. Review of the development of diamond radiation sensors

    Science.gov (United States)

    Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

    1999-09-01

    Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 μm have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9×10 15 π cm -2, 5×10 15 p cm -2 and 1.35×10 15 n cm -2, respectively. Diamond micro-strip detectors with 50 μm pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2×4 cm 2 surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out chip prototypes for ATLAS and CMS. Beam test results are shown from a diamond detector bump-bonded to an ATLAS prototype read-out. They demonstrate a 98% bump-bonding efficiency and a digital resolution in both dimensions.

  7. Review of the development of diamond radiation sensors

    CERN Document Server

    Adam, W; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

    1999-01-01

    Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 mu m have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9*10/sup 15/ pi cm/sup -2/, 5*10/sup 19/ p cm/sup -2/ and 1.35*10/sup 15/ n cm/sup -2 /, respectively. Diamond micro-strip detectors with 50 mu m pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2*4 cm/sup 2/ surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out ch...

  8. Development of ITER diagnostics: Neutronic analysis and radiation hardness

    Energy Technology Data Exchange (ETDEWEB)

    Vukolov, Konstantin, E-mail: vukolov_KY@nrcki.ru; Borisov, Andrey; Deryabina, Natalya; Orlovskiy, Ilya

    2015-10-15

    Highlights: • Problems of ITER diagnostics caused by neutron radiation from hot DT plasma considered. • Careful neutronic analysis is necessary for ITER diagnostics development. • Effective nuclear shielding for ITER diagnostics in the 11th equatorial port plug proposed. • Requirements for study of radiation hardness of diagnostic elements defined. • Results of optical glasses irradiation tests in a fission reactor given. - Abstract: The paper is dedicated to the problems of ITER diagnostics caused by effects of radiation from hot DT plasma. An effective nuclear shielding must be arranged in diagnostic port plugs to meet the nuclear safety requirements and to provide reliable operation of the diagnostics. This task can be solved with the help of neutronic analysis of the diagnostics environment within the port plugs at the design stage. Problems of neutronic calculations are demonstrated for the 11th equatorial port plug. The numerical simulation includes the calculations of neutron fluxes in the port-plug and in the interspace. Options for nuclear shielding, such as tungsten collimator, boron carbide and water moderators, stainless steel and lead screens are considered. Data on neutron fluxes along diagnostic labyrinths allow to define radiation hardness requirements for the diagnostic components and to specify their materials. Options for windows and lenses materials for optical diagnostics are described. The results of irradiation of flint and silica glasses in nuclear reactor have shown that silica KU-1 and KS-4V retain transparency in visible range after neutron fluence of 10{sup 17} cm{sup −2}. Flints required for achromatic objectives have much less radiation hardness about 5 × 10{sup 14} n/cm{sup 2}.

  9. Acoustic emission sensor radiation damage threshold experiment

    International Nuclear Information System (INIS)

    Beeson, K.M.; Pepper, C.E.

    1994-01-01

    Determination of the threshold for damage to acoustic emission sensors exposed to radiation is important in their application to leak detection in radioactive waste transport and storage. Proper response to system leaks is necessary to ensure the safe operation of these systems. A radiation impaired sensor could provide ''false negative or false positive'' indication of acoustic signals from leaks within the system. Research was carried out in the Radiochemical Technology Division at Oak Ridge National Laboratory to determine the beta/gamma radiation damage threshold for acoustic emission sensor systems. The individual system consisted of an acoustic sensor mounted with a two part epoxy onto a stainless steel waveguide. The systems were placed in an irradiation fixture and exposed to a Cobalt-60 source. After each irradiation, the sensors were recalibrated by Physical Acoustics Corporation. The results were compared to the initial calibrations performed prior to irradiation and a control group, not exposed to radiation, was used to validate the results. This experiment determines the radiation damage threshold of each acoustic sensor system and verifies its life expectancy, usefulness and reliability for many applications in radioactive environments

  10. Two-sensor control in active vibration isolation using hard mounts

    NARCIS (Netherlands)

    Beijen, M.A.; Tjepkema, D.; van Dijk, J.

    To isolate precision machines from floor vibrations, active vibration isolators are often applied. In this paper, a two-sensor control strategy, based on acceleration feedback and force feedback, is proposed for an active vibration isolator using a single-axis active hard mount. The hard mount

  11. Two-sensor control in active vibration isolation using hard mounts

    NARCIS (Netherlands)

    Beijen, M.A.; Tjepkema, D.; van Dijk, Johannes

    2014-01-01

    To isolate precision machines from floor vibrations, active vibration isolators are often applied. In this paper, a two-sensor control strategy, based on acceleration feedback and force feedback, is proposed for an active vibration isolator using a single-axis active hard mount. The hard mount

  12. Relative hardness measurement of soft objects by a new fiber optic sensor

    Science.gov (United States)

    Ahmadi, Roozbeh; Ashtaputre, Pranav; Abou Ziki, Jana; Dargahi, Javad; Packirisamy, Muthukumaran

    2010-06-01

    The measurement of relative hardness of soft objects enables replication of human finger tactile perception capabilities. This ability has many applications not only in automation and robotics industry but also in many other areas such as aerospace and robotic surgery where a robotic tool interacts with a soft contact object. One of the practical examples of interaction between a solid robotic instrument and a soft contact object occurs during robotically-assisted minimally invasive surgery. Measuring the relative hardness of bio-tissue, while contacting the robotic instrument, helps the surgeons to perform this type of surgery more reliably. In the present work, a new optical sensor is proposed to measure the relative hardness of contact objects. In order to measure the hardness of a contact object, like a human finger, it is required to apply a small force/deformation to the object by a tactile sensor. Then, the applied force and resulting deformation should be recorded at certain points to enable the relative hardness measurement. In this work, force/deformation data for a contact object is recorded at certain points by the proposed optical sensor. Recorded data is used to measure the relative hardness of soft objects. Based on the proposed design, an experimental setup was developed and experimental tests were performed to measure the relative hardness of elastomeric materials. Experimental results verify the ability of the proposed optical sensor to measure the relative hardness of elastomeric samples.

  13. Radiation hardness of superconducting magnet insulation materials for FAIR

    International Nuclear Information System (INIS)

    Seidl, Tim

    2013-03-01

    This thesis focuses on radiation degradation studies of polyimide, polyepoxy/glass-fiber composites and other technical components used, for example, in the superconducting magnets of new ion accelerators such as the planned International Facility for Antiproton and Ion Research (FAIR) at the GSI Helmholtz Center of Heavy Ion Research (GSI) in Darmstadt. As accelerators are becoming more powerful, i.e., providing larger energies and beam intensities, the potential risk of radiation damage to the components increases. Reliable data of the radiation hardness of accelerator materials and components concerning electrical, thermal and other technical relevant properties are of great interest also for other facilities such as the Large Hadron Collider (LHC) of CERN. Dependent on the position of the different components, induced radiation due to beam losses consists of a cocktail of gammas, neutrons, protons, and heavier particles. Although the number of heavy fragments of the initial projectiles is small compared to neutrons, protons, or light fragments (e.g. ? particles), their large energy deposition can induce extensive damage at rather low fluences (dose calculations show that the contribution of heavy ions to the total accumulated dose can reach 80 %). For this reason, defined radiation experiments were conducted using different energetic ion beams (from protons to uranium) and gamma radiation from a Co-60 source. The induced changes were analyzed by means of in-situ and ex-situ analytical methods, e.g. ultraviolet-visible and infrared spectroscopy, residual gas analysis, thermal gravimetric analysis, dielectric strength measurements, measurements of low temperature thermal properties, and performance tests. In all cases, the radiation induces a change in molecular structure as well as loss of functional material properties. The amount of radiation damage is found to be sensitive to the used type of ionizing radiation and the long term stability of the materials is

  14. Radiation-hard/high-speed parallel optical links

    Energy Technology Data Exchange (ETDEWEB)

    Gan, K.K., E-mail: gan@mps.ohio-state.edu [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Buchholz, P.; Heidbrink, S. [Fachbereich Physik, Universität Siegen, Siegen (Germany); Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S. [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Vogt, M.; Ziolkowski, M. [Fachbereich Physik, Universität Siegen, Siegen (Germany)

    2016-09-21

    We have designed and fabricated a compact parallel optical engine for transmitting data at 5 Gb/s. The device consists of a 4-channel ASIC driving a VCSEL (Vertical Cavity Surface Emitting Laser) array in an optical package. The ASIC is designed using only core transistors in a 65 nm CMOS process to enhance the radiation-hardness. The ASIC contains an 8-bit DAC to control the bias and modulation currents of the individual channels in the VCSEL array. The performance of the optical engine up at 5 Gb/s is satisfactory.

  15. Radiation hardness of WLS fibres for the ATLAS Tile Calorimeter

    CERN Document Server

    David, M; Maio, A

    2007-01-01

    In this document we present the data obtained in the irradiation in a Co-60 source of WLS fibers for the TileCal calorimeter. The optical, mechanical and radiation hardness properties of these fibers were developed in close contact with three producers: Bicron, Kuraray and Pol.Hi.Tech. The results on the degradation of the light output and attenuation length from five irradiations are presented. The fibers were irradiated with a total dose at least 3 times higher than the dose predicted for 10 years of operation of LHC at nominal luminosity.

  16. Study of the Radiation-Hardness of VCSEL and PIN

    CERN Document Server

    Gan, K K; Fernando, W; Kagan, H P; Kass, R D; Lebbai, M R M; Merritt, H; Moore, J R; Nagarkar, A; Rizatdinova, F; Skubic, P L; Smith, D S; Strang, M

    2009-01-01

    The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.

  17. Prototype for a Radiation Hard Upgrade to the ATLAS ZDC

    CERN Document Server

    Phipps, Michael William; The ATLAS collaboration

    2017-01-01

    Increases in luminosity and collision energy at the LHC challenge the radiation hardness of detectors located along the beamline. This problem is especially acute for the Zero Degree Calorimeters (ZDCs) in ATLAS, which are exposed to around 10^{10} rad/yr, rendering the current version of the detector inviable during p+p running. To address this shortcoming and allow for important triggers and potential access to low-x physics, we designed a prototype detector that replaces quartz radiator material with a circulating, liquid hydrocarbon. It also features a dual-stage wavelength shifting scheme to transport light to silicon photo-multipliers, as well as both transverse and longitudinal segmentation to study the shower development in two dimensions. Design considerations, results from an SPS beam test and comparisons to GEANT simulation will be presented.

  18. Radiation hardness studies for DEPFETs in Belle II

    International Nuclear Information System (INIS)

    Ritter, Andreas

    2014-01-01

    The study of CP violation requires dedicated detectors and accelerators. At KEK, the High Energy Accelerator Research Organization located in Tsukuba, Japan, an upgrade of the present accelerator KEKB and its detector is in progress. For this new Belle II detector, a new vertex system will be installed, consisting of a silicon strip detector (SVD) and a pixel detector (PXD). The PXD exhibits eight million pixels, each of them made of Depleted p-channel Field Effect Transistors (DEPFETs). During the operation of Belle II various machine- as well as luminosity-related background processes affect the device performance of the DEPFET through radiation damage. As a Metal-Oxide-Semiconductor (MOS) device, the DEPFET is affected by ionizing radiation damage as well as by damages to the silicon bulk itself. The major part of the radiation damage has its origin in the creation of electrons and positrons near the interaction point. Therefore, the hardness factor of electrons of relevant energy was investigated in this work. With this quantity the damage by electrons could be compared to the damage inflicted by neutrons. Neutron irradiations were performed with DEPFETs and related silicon material. The effects of leakage current increase and type inversion were studied. As the electron hardness investigation indicates, the bulk damage done to the DEPFET is small in comparison to the impact on the silicon dioxide layer of the device. Ionizing radiation results in a build-up of oxide charge, thus changing the device characteristics. Especially the threshold voltage of the DEPFET is shifted to more negative values. This shift has to be compensated during the operation of Belle II and is limited by device and system constraints, thus an overall small shift is desired. The changes in the device characteristics were investigated for the two gate electrodes of the DEPFET with respect to their biasing and production related issues. With an additional layer of silicon nitride and a

  19. Electric field deformation in diamond sensors induced by radiation defects

    Energy Technology Data Exchange (ETDEWEB)

    Kassel, Florian; Boer, Wim de; Boegelspacher, Felix; Dierlamm, Alexander; Mueller, Thomas; Steck, Pia [Institut fuer Experimentelle Kernphysik (IEKP), Karlsruher Institut fuer Technologie (KIT) (Germany); Dabrowski, Anne; Guthoff, Moritz [CERN (Switzerland)

    2016-07-01

    The BCML system is a beam monitoring device in the CMS experiment at the LHC. As detectors 32 poly-crystalline CVD diamond sensors are positioned in a ring around the beam pipe at a distance of ±1.8 m and ±14.4 m from the interaction point. The radiation hardness of the diamond sensors in terms of measured signal during operation was significantly lower than expected from laboratory measurements. At high particle rates, such as those occurring during the operation of the LHC, a significant fraction of the defects act as traps for charge carriers. This space charge modifies the electrical field in the sensor bulk leading to a reduction of the charge collection efficiency (CCE). A diamond irradiation campaign was started to investigate the rate dependent electrical field deformation with respect to the radiation damage. Besides the electrical field measurements via the Transient Current Technique, the CCE was measured. The experimental results were used to create an effective trap model that takes the radiation damage into account. Using this trap model the rate dependent electrical field deformation and the CCE were simulated with the software ''SILVACO TCAD''. This talk compares the experimental measurement results with the simulations.

  20. Radiation effects on active pixel sensors (APS)

    International Nuclear Information System (INIS)

    Cohen, M.; David, J.P.

    1999-01-01

    Active pixel sensor (APS) is a new generation of image sensors which presents several advantages relatively to charge coupled devices (CCDs) particularly for space applications (APS requires only 1 voltage to operate which reduces considerably current consumption). Irradiation was performed using 60 Co gamma radiation at room temperature and at a dose rate of 150 Gy(Si)/h. 2 types of APS have been tested: photodiode-APS and photoMOS-APS. The results show that photoMOS-APS is more sensitive to radiation effects than photodiode-APS. Important parameters of image sensors like dark currents increase sharply with dose levels. Nevertheless photodiode-APS sensitivity is one hundred time lower than photoMOS-APS sensitivity

  1. Total dose radiation effects of pressure sensors fabricated on uni-bond-SOI materials

    International Nuclear Information System (INIS)

    Zhu Shiyang; Huang Yiping; Wang Jin; Li Anzhen; Shen Shaoqun; Bao Minhang

    2001-01-01

    Piezoresistive pressure sensors with a twin-island structure were successfully fabricated using high quality Uni-bond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO 2 , the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60 Co γ-rays up to 2.3 x 10 4 Gy(H 2 O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition

  2. Piezoelectric Sensor to Measure Soft and Hard Stiffness with High Sensitivity for Ultrasonic Transducers

    Directory of Open Access Journals (Sweden)

    Yan-Rui Li

    2015-06-01

    Full Text Available During dental sinus lift surgery, it is important to monitor the thickness of the remaining maxilla to avoid perforating the sinus membrane. Therefore, a sensor should be integrated into ultrasonic dental tools to prevent undesirable damage. This paper presents a piezoelectric (PZT sensor installed in an ultrasonic transducer to measure the stiffness of high and low materials. Four design types using three PZT ring materials and a split PZT for actuator and sensor ring materials were studied. Three sensor locations were also examined. The voltage signals of the sensor and the displacement of the actuator were analyzed to distinguish the low and high stiffness. Using sensor type T1 made of the PZT-1 material and the front location A1 provided a high sensitivity of 2.47 Vm/kN. The experimental results demonstrated that our design can measure soft and hard stiffness.

  3. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  4. Test of radiation hardness of pcCVD detectors

    Energy Technology Data Exchange (ETDEWEB)

    Schlemme, Steffen [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Technische Universitaet Darmstadt (Germany); Enders, Joachim [Technische Universitaet Darmstadt (Germany); Figuera, P.; Salamone, S. [LNS-INFN Catania (Italy); Fruehauf, J.; Kis, Mladen; Kratz, A.; Kurz, N.; Loechner, S.; Nociforo, Chiara; Schirru, Fabio; Szczepanczyk, B.; Traeger, M.; Visinka, R. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Musumarra, A. [LNS-INFN Catania (Italy); University of Catania (Italy)

    2016-07-01

    The new in-flight separator Super-FRS is under construction at the Facility for Antiproton and Ion Research (FAIR, Darmstadt). Ion rates up to 3 x 10{sup 11} {sup 238}U/spill demand an adaption of detectors to a high radiation environment. A test experiment to investigate the radiation hardness of polycrystalline diamond detectors (pcCVD) was performed at the LNS-INFN in Catania using a {sup 12}C beam at 62 MeV/u and intensities of up to 1.5 pnA. The setup consisted of pcCVD strip detectors to measure the beam profile, a single crystal diamond detector to calibrate the ionisation chamber working in current mode as a beam intensity monitor and a pcCVD sample to be irradiated. The IC used was designed for FAIR and showed a stable counting rate allowing us to calibrate and perform beam intensity measurements with it. The total measured counts on the sample were 8.25 x 10{sup 11} counts/mm{sup 2} over a period of 60 hours. Digital waveforms of the pcCVD signals were taken with an oscilloscope and analysed. The results showed no change of the pcCVD signal properties during the entire irradiation.

  5. Radiation-hard semiconductor detectors for SuperLHC

    CERN Document Server

    Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim

    2005-01-01

    An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

  6. Aespoe Hard Rock Laboratory. Sensor Data Report No 23

    International Nuclear Information System (INIS)

    Goudarzi, Reza; Johannesson, Lars-Erik

    2010-11-01

    pressure is measured in altogether 64 points in 17 boreholes all around the tunnel. Section 2. The following measurements are made in the bentonite in each of the two instrumented deposition holes in Section 2 (5 and 6): Temperature is measured in 29 points, total pressure in 27 points, pore water pressure in 14 points and relative humidity in 47 points deposition hole 5 and in 65 points in deposition hole 6. Temperature is also measured by all relative humidity gauges. The following measurements are made in the backfill in Section 2. Temperature is measured in 16 points, total pressure in 16 points, pore water pressure in 18 points and relative humidity in 32 points. Temperature is also measured by all relative humidity gauges. Furthermore, water content is measured by an electric chain in one section. Every measuring point is related to a local coordinate system in the tunnel. The following measurements are made on the surface of the canisters in Section 2: Temperature is measured every meter along two fiber optic cables. Additional to this temperature measurement three conventional thermocouples are placed on each canister. Furthermore, displacements of the canister in hole 6 are measured with 6 gauges. The following measurements are made in the rock in Section 2: Temperature is measured in 24 points in boreholes close to the deposition holes. Relative humidity is also measured in 6 points in the rock close to deposition hole 6. Conclusions. A general conclusion is that the measuring systems work well, but the number of sensors that has failed is increasing. 255 (excluding water pressure sensors in the rock, geo-electric measurements) out of totally 363 installed sensors in Section 1 are out of order, the majority being RH-sensors that fail at water saturation. 139 (excluding water pressure sensors in the rock, geo-electric measurements, stress and strain in the rock and displacement of canister) out of totally 394 sensors in Section 2 are out of order. Furthermore

  7. Aespoe Hard Rock Laboratory. Sensor Data Report No 23

    Energy Technology Data Exchange (ETDEWEB)

    Goudarzi, Reza; Johannesson, Lars-Erik (Clay Technology AB (Sweden))

    2010-11-15

    pressure is measured in altogether 64 points in 17 boreholes all around the tunnel. Section 2. The following measurements are made in the bentonite in each of the two instrumented deposition holes in Section 2 (5 and 6): Temperature is measured in 29 points, total pressure in 27 points, pore water pressure in 14 points and relative humidity in 47 points deposition hole 5 and in 65 points in deposition hole 6. Temperature is also measured by all relative humidity gauges. The following measurements are made in the backfill in Section 2. Temperature is measured in 16 points, total pressure in 16 points, pore water pressure in 18 points and relative humidity in 32 points. Temperature is also measured by all relative humidity gauges. Furthermore, water content is measured by an electric chain in one section. Every measuring point is related to a local coordinate system in the tunnel. The following measurements are made on the surface of the canisters in Section 2: Temperature is measured every meter along two fiber optic cables. Additional to this temperature measurement three conventional thermocouples are placed on each canister. Furthermore, displacements of the canister in hole 6 are measured with 6 gauges. The following measurements are made in the rock in Section 2: Temperature is measured in 24 points in boreholes close to the deposition holes. Relative humidity is also measured in 6 points in the rock close to deposition hole 6. Conclusions. A general conclusion is that the measuring systems work well, but the number of sensors that has failed is increasing. 255 (excluding water pressure sensors in the rock, geo-electric measurements) out of totally 363 installed sensors in Section 1 are out of order, the majority being RH-sensors that fail at water saturation. 139 (excluding water pressure sensors in the rock, geo-electric measurements, stress and strain in the rock and displacement of canister) out of totally 394 sensors in Section 2 are out of order. Furthermore

  8. Radiation distribution sensor with optical fibers for high radiation fields

    International Nuclear Information System (INIS)

    Takada, Eiji; Kimura, Atsushi; Hosono, Yoneichi; Takahashi, Hiroyuki; Nakazawa, Masaharu

    1999-01-01

    Radiation distribution sensors with their feasibilities have been described in earlier works. However, due to large radiation induced transmission losses in optical fibers, especially in the visible wavelength region, it has been difficult to apply these techniques to high radiation fields. In this study, we proposed a new concept of optical fiber based radiation distribution measurements with near infrared (IR) emission. Near IR scintillators were attached to the ends of optical fibers, where the fibers were bundled and connected to an N-MOS line sensor or a cooled CCD camera. From the measurements of each area density, the radiation levels at the positions of the scintillators can be known. The linearity between the gamma dose rate at each scintillator and the registered counts has been examined. For correcting the radiation induced loss effects, we applied the Optical Time Domain Reflectometry technique to measure the loss distribution and from the results, a possibility for correction of the loss effect has been demonstrated. The applicable dose rate range was evaluated to be from 0.1 to 10 3 Gy/h. This system can be a promising tool as a flexible dose rate distribution monitor in radiation facilities like nuclear plants and accelerator facilities. (author)

  9. Study of planar pixel sensors hardener to radiations for the upgrade of the ATLAS vertex detector

    International Nuclear Information System (INIS)

    Benoit, M.

    2011-05-01

    In this work, we present a study, using TCAD (Technology Computer-Assisted Design) simulation, of the possible methods of designing planar pixel sensors by reducing their inactive area and improving their radiation hardness for use in the Insertable B-Layer (IBL) project and for SLHC upgrade phase for the ATLAS experiment. Different physical models available have been studied to develop a coherent model of radiation damage in silicon that can be used to predict silicon pixel sensor behavior after exposure to radiation. The Multi-Guard Ring Structure, a protection structure used in pixel sensor design was studied to obtain guidelines for the reduction of inactive edges detrimental to detector operation while keeping a good sensor behavior through its lifetime in the ATLAS detector. A campaign of measurement of the sensor process parameters and electrical behavior to validate and calibrate the TCAD simulation models and results are also presented. A model for diode charge collection in highly irradiated environment was developed to explain the high charge collection observed in highly irradiated devices. A simple planar pixel sensor digitization model to be used in test beam and full detector system is detailed. It allows for easy comparison between experimental data and prediction by the various radiation damage models available. The digitizer has been validated using test beam data for unirradiated sensors and can be used to produce the first full scale simulation of the ATLAS detector with the IBL that include sensor effects such as slim edge and thinning of the sensor. (author)

  10. A sensor element for direct radiation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Bajons, P.; Wernhart, U.; Zeiler, H. [University of Vienna (Austria). Institut of Material Physics

    1998-08-01

    A combination of a photodiode with a nonimaging light concentrator is developed to perform measurements of the direct solar radiation component. A prototype composed of low price elements is taken as a starting point to discuss the problems which must be faced when calibrating such sensors. By this the influence of the angle of incidence and spectral distribution (caused by different air mass or varying degree of clearness) of the incident radiation on the behavior of the system is studied. The readings are compared to the calculated (global minus diffuse) readings obtained from two standard star pyranometers. Finally the possibilities for increasing the accuracy of the sensor element and for applying the device are discussed. (author)

  11. Distributed data fusion across multiple hard and soft mobile sensor platforms

    Science.gov (United States)

    Sinsley, Gregory

    is a younger field than centralized fusion. The main issues in distributed fusion that are addressed are distributed classification and distributed tracking. There are several well established methods for performing distributed fusion that are first reviewed. The chapter on distributed fusion concludes with a multiple unmanned vehicle collaborative test involving an unmanned aerial vehicle and an unmanned ground vehicle. The third issue this thesis addresses is that of soft sensor only data fusion. Soft-only fusion is a newer field than centralized or distributed hard sensor fusion. Because of the novelty of the field, the chapter on soft only fusion contains less background information and instead focuses on some new results in soft sensor data fusion. Specifically, it discusses a novel fuzzy logic based soft sensor data fusion method. This new method is tested using both simulations and field measurements. The biggest issue addressed in this thesis is that of combined hard and soft fusion. Fusion of hard and soft data is the newest area for research in the data fusion community; therefore, some of the largest theoretical contributions in this thesis are in the chapter on combined hard and soft fusion. This chapter presents a novel combined hard and soft data fusion method based on random set theory, which processes random set data using a particle filter. Furthermore, the particle filter is designed to be distributed across multiple robots and portable computers (used by human observers) so that there is no centralized failure point in the system. After laying out a theoretical groundwork for hard and soft sensor data fusion the thesis presents practical applications for hard and soft sensor data fusion in simulation. Through a series of three progressively more difficult simulations, some important hard and soft sensor data fusion capabilities are demonstrated. The first simulation demonstrates fusing data from a single soft sensor and a single hard sensor in

  12. Shutdown and degradation: Space computers for nuclear application, verification of radiation hardness. Final report

    International Nuclear Information System (INIS)

    Eichhorn, E.; Gerber, V.; Schreyer, P.

    1995-01-01

    (1) Employment of those radiation hard electronics which are already known in military and space applications. (2) The experience in space-flight shall be used to investigate nuclear technology areas, for example, by using space electronics to prove the range of applications in nuclear radiating environments. (3) Reproduction of a computer developed for telecommunication satellites; proof of radiation hardness by radiation tests. (4) At 328 Krad (Si) first failure of radiation tolerant devices with 100 Krad (Si) hardness guaranteed. (5) Using radiation hard devices of the same type you can expect applications at doses of greater than 1 Mrad (Si). Electronic systems applicable for radiation categories D, C and lower part of B for manipulators, vehicles, underwater robotics. (orig.) [de

  13. Radiation-hard/high-speed parallel optical links

    International Nuclear Information System (INIS)

    Gan, K.K.; Buchholz, P.; Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S.; Wiese, A.; Ziolkowski, M.

    2014-01-01

    We have designed an ASIC for use in a parallel optical engine for a new layer of the ATLAS pixel detector in the initial phase of the LHC luminosity upgrade. The ASIC is a 12-channel VCSEL (Vertical Cavity Surface Emitting Laser) array driver capable of operating up to 5 Gb/s per channel. The ASIC is designed using a 130 nm CMOS process to enhance the radiation-hardness. A scheme for redundancy has also been implemented to allow bypassing of a broken VCSEL. The ASIC also contains a power-on reset circuit that sets the ASIC to a default configuration with no signal steering. In addition, the bias and modulation currents of the individual channels are programmable. The performance of the first prototype ASIC up to 5 Gb/s is satisfactory. Furthermore, we are able to program the bias and modulation currents and to bypass a broken VCSEL channel. We are currently upgrading our design to allow operation at 10 Gb/s per channel yielding an aggregated bandwidth of 120 Gb/s. Some preliminary results of the design will be presented

  14. Chronic radiation effects on dental hard tissue (''radiation carries''). Classification and therapeutic strategies

    International Nuclear Information System (INIS)

    Groetz, K.A.; Brahm, R.; Al-Nawas, B.; Wagner, W.; Riesenbeck, D.; Willich, N.; Seegenschmiedt, M.H.

    2001-01-01

    Objectives: Since the first description of rapid destruction of dental hard tissues following head and neck radiotherapy 80 years ago, 'radiation caries' is an established clinical finding. The internationally accepted clinical evaluation score RTOG/EORTC however is lacking a classification of this frequent radiogenic alteration. Material and Methods: Medical records, data and images of radiation effects on the teeth of more than 1,500 patients, who underwent periradiotherapeutic care, were analyzed. Macroscopic alterations regarding the grade of late lesions of tooth crowns were used for a classification into 4 grades according to the RTOG/EORTC guidelines. Results: No early radiation effects were found by macroscopic inspection. In the first 90 days following radiotherapy 1/3 of the patients complained of reversible hypersensitivity, which may be related to a temporary hyperemia of the pulp. It was possible to classify radiation caries as a late radiation effect on a graded scale as known from RTOG/EORTC for other organ systems. This is a prerequisite for the integration of radiation caries into the international nomenclature of the RTOG/EORTC classification. Conclusions: The documentation of early radiation effects on dental hard tissues seems to be neglectable. On the other hand the documentation of late radiation effects has a high clinical impact. The identification of an initial lesion at the high-risk areas of the neck and incisal part of the tooth can lead to a successful therapy as a major prerequisite for orofacial rehabilitation. An internationally standardized documentation is a basis for the evaluation of the side effects of radiooncotic therapy as well as the effectiveness of protective and supportive procedures. (orig.) [de

  15. Biological Sensors for Solar Ultraviolet Radiation

    Directory of Open Access Journals (Sweden)

    André P. Schuch

    2011-04-01

    Full Text Available Solar ultraviolet (UV radiation is widely known as a genotoxic environmental agent that affects Earth ecosystems and the human population. As a primary consequence of the stratospheric ozone layer depletion observed over the last decades, the increasing UV incidence levels have heightened the concern regarding deleterious consequences affecting both the biosphere and humans, thereby leading to an increase in scientific efforts to understand the role of sunlight in the induction of DNA damage, mutagenesis, and cell death. In fact, the various UV-wavelengths evoke characteristic biological impacts that greatly depend on light absorption of biomolecules, especially DNA, in living organisms, thereby justifying the increasing importance of developing biological sensors for monitoring the harmful impact of solar UV radiation under various environmental conditions. In this review, several types of biosensors proposed for laboratory and field application, that measure the biological effects of the UV component of sunlight, are described. Basically, the applicability of sensors based on DNA, bacteria or even mammalian cells are presented and compared. Data are also presented showing that on using DNA-based sensors, the various types of damage produced differ when this molecule is exposed in either an aqueous buffer or a dry solution. Apart from the data thus generated, the development of novel biosensors could help in evaluating the biological effects of sunlight on the environment. They also emerge as alternative tools for using live animals in the search for protective sunscreen products.

  16. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

    CERN Document Server

    Fretwurst, E; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A G; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, L; Dalla Betta, G F; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; González-Sevilla, S; Gorelov,I; Goss, J; Gouldwell-Bates, A; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, I; Lazanu, S; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Linhart, V; Litovchenko, P G; Litovchenko, A P; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Populea, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidela, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

    2005-01-01

    The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Furthe...

  17. Effective polycrystalline sensor of ultraviolet radiation

    Directory of Open Access Journals (Sweden)

    S.Yu. Pavelets

    2017-10-01

    Full Text Available Deposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for high stability of the parameters inherent to the p-Cu1.8S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component.

  18. Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier

    International Nuclear Information System (INIS)

    Re, V.; Gaioni, L.; Manghisoni, M.; Ratti, L.; Traversi, G.

    2010-01-01

    The progress of industrial microelectronic technologies has already overtaken the 130 nm CMOS generation that is currently the focus of IC designers for new front-end chips in LHC upgrades and other detector applications. In a broader time span, sub-100 nm CMOS processes may become appealing for the design of very compact front-end systems with advanced integrated functionalities. This is especially true in the case of pixel detectors, both for monolithic devices (MAPS) and for hybrid implementations where a high resistivity sensor is connected to a CMOS readout chip. Technologies beyond the 100 nm frontier have peculiar features, such as the evolution of the device gate material to reduce tunneling currents through the thin dielectric. These new physical device parameters may impact on functional properties such as noise and radiation hardness. On the basis of experimental data relevant to commercial devices, this work studies potential advantages and challenges associated to the design of low-noise and rad-hard analog circuits in these aggressively scaled technologies.

  19. Review of high bandwidth fiber optics radiation sensors

    International Nuclear Information System (INIS)

    Lyons, P.B.

    1985-01-01

    This paper summarizes the use of fiber optics or guided optical systems for radiation sensors. It is limited a passive systems wherein electrical is not required at the sensor location. However, electrically powered light sources, receivers and/or recorders may still be required for detection and data storage in sensor system operation. This paper emphasizes sensor technologies that permit high bandwidth measurements of transient radiation levels, and will also discuss several low bandwidth applications. 60 refs

  20. Real time sensor for therapeutic radiation delivery

    International Nuclear Information System (INIS)

    Bliss, M.; Craig, R.A.; Reeder, P.L.

    1998-01-01

    The invention is a real time sensor for therapeutic radiation. A probe is placed in or near the patient that senses in real time the dose at the location of the probe. The strength of the dose is determined by either an insertion or an exit probe. The location is determined by a series of vertical and horizontal sensing elements that gives the operator a real time read out dose location relative to placement of the patient. The increased accuracy prevents serious tissue damage to the patient by preventing overdose or delivery of a dose to a wrong location within the body. 14 figs

  1. Comptonization of low-frequency radiation in accretion disks Angular distribution and polarization of hard X-ray radiation

    International Nuclear Information System (INIS)

    Suniaev, R.A.; Titarchuk, L.G.

    1984-01-01

    Analytical consideration is given to the comptonization of photons and its effects on the radiation emitted from accretion disks of compact X-ray sources, such as black holes and neutron stars. Attention is given to the photon distribution during escape from the disk, the angular distribution of hard radiation from the disk, the polarization of hard radiation and the electron temperature distribution over the optical depth. It is shown that the hard radiation spectrum is independent of the low-frequency photon source distribution. The angular distribution and polarization of the outgoing X-rays are a function of the optical depth. A Thomson approximation is used to estimate the angular distribution of the hard radiation and the polarization over the disk. The polarization results are compared with OSO-8 satellite data for Cyg X-1 and show good agreement at several energy levels. 17 references

  2. Effect of gamma radiation on micromechanical hardness of lead-free solder joint

    Energy Technology Data Exchange (ETDEWEB)

    Paulus, Wilfred [Universiti Kebangsaan Malaysia, Bangi, 43600 Kajang, Selangor (Malaysia); Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor (Malaysia); Rahman, Irman Abdul; Jalar, Azman; Kamil, Insan; Bakar, Maria Abu [Universiti Kebangsaan Malaysia, Bangi, 43600 Kajang, Selangor (Malaysia); Yusoff, Wan Yusmawati Wan [Universiti Pertahanan Nasional Malaysia, Kem Sg. Besi, 57000 Kuala Lumpur (Malaysia)

    2015-09-25

    Lead-free solders are important material in nano and microelectronic surface mounting technology for various applications in bio medicine, environmental monitoring, spacecraft and satellite instrumentation. Nevertheless solder joint in radiation environment needs higher reliability and resistance to any damage caused by ionizing radiations. In this study a lead-free 99.0Sn0.3Ag0.7Cu wt.% (SAC) solder joint was developed and subjected to various doses of gamma radiation to investigate the effects of the ionizing radiation to micromechanical hardness of the solder. Averaged hardness of the SAC joint was obtained from nanoindentation test. The results show a relationship between hardness values of indentations and the increment of radiation dose. Highest mean hardness, 0.2290 ± 0.0270 GPa was calculated on solder joint which was exposed to 5 Gray dose of gamma radiation. This value indicates possible radiation hardening effect on irradiated solder. The hardness gradually decreased to 0.1933 ± 0.0210 GPa and 0.1631 ± 0.0173 GPa when exposed to doses 50 and 500 gray respectively. These values are also lower than the hardness of non irradiated sample which was calculated as 0.2084 ± 0.0.3633 GPa indicating possible radiation damage and needs further related atomic dislocation study.

  3. Study of surface properties of ATLAS12 strip sensors and their radiation resistance

    Science.gov (United States)

    Mikestikova, M.; Allport, P. P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Kuczewski, P.; Lynn, D.; Hommels, L. B. A.; Ullan, M.; Bloch, I.; Gregor, I. M.; Tackmann, K.; Hauser, M.; Jakobs, K.; Kuehn, S.; Mahboubi, K.; Mori, R.; Parzefall, U.; Clark, A.; Ferrere, D.; Sevilla, S. Gonzalez; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; McMullen, T.; McEwan, F.; O'Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Stastny, J.; Bevan, A.; Beck, G.; Milke, C.; Domingo, M.; Fadeyev, V.; Galloway, Z.; Hibbard-Lubow, D.; Liang, Z.; Sadrozinski, H. F.-W.; Seiden, A.; To, K.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Jinnouchi, O.; Hara, K.; Sato, K.; Hagihara, M.; Iwabuchi, S.; Bernabeu, J.; Civera, J. V.; Garcia, C.; Lacasta, C.; Marti i Garcia, S.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.

    2016-09-01

    A radiation hard n+-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the "ATLAS ITk Strip Sensor collaboration" and produced by Hamamatsu Photonics. Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in "punch-through protection" (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×1016 neq/cm2, by reactor neutron fluence of 1×1015 neq/cm2 and by gamma rays from 60Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07.

  4. Uncooled Radiation Hard SiC Schottky VUV Detectors Capable of Single Photon Sensing, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize very large area, uncooled and radiative hard 4H-SiC VUV detectors capable of near single...

  5. Radiation hardness qualification of PbWO4 scintillation crystals for the CMS Electromagnetic Calorimeter

    CERN Document Server

    Adzic, P.; Andelin, D.; Anicin, I.; Antunovic, Z.; Arcidiacono, R.; Arenton, M.W.; Auffray, E.; Argiro, S.; Askew, A.; Baccaro, S.; Baffioni, S.; Balazs, M.; Bandurin, D.; Barney, D.; Barone, L.M.; Bartoloni, A.; Baty, C.; Beauceron, S.; Bell, K.W.; Bernet, C.; Besancon, M.; Betev, B.; Beuselinck, R.; Biino, C.; Blaha, J.; Bloch, P.; Borisevitch, A.; Bornheim, A.; Bourotte, J.; Brown, R.M.; Buehler, M.; Busson, P.; Camanzi, B.; Camporesi, T.; Cartiglia, N.; Cavallari, F.; Cecilia, A.; Chang, P.; Chang, Y.H.; Charlot, C.; Chen, E.A.; Chen, W.T.; Chen, Z.; Chipaux, R.; Choudhary, B.C.; Choudhury, R.K.; Cockerill, D.J.A.; Conetti, S.; Cooper, S.I.; Cossutti, F.; Cox, B.; Cussans, D.G.; Dafinei, I.; Da Silva Di Calafiori, D.R.; Daskalakis, G.; David, A.; Deiters, K.; Dejardin, M.; De Benedetti, A.; Della Ricca, G.; Del Re, D.; Denegri, D.; Depasse, P.; Descamps, J.; Diemoz, M.; Di Marco, E.; Dissertori, G.; Dittmar, M.; Djambazov, L.; Djordjevic, M.; Dobrzynski, L.; Dolgopolov, A.; Drndarevic, S.; Drobychev, G.; Dutta, D.; Dzelalija, M.; Elliott-Peisert, A.; El Mamouni, H.; Evangelou, I.; Fabbro, B.; Faure, J.L.; Fay, J.; Fedorov, A.; Ferri, F.; Franci, D.; Franzoni, G.; Freudenreich, K.; Funk, W.; Ganjour, S.; Gascon, S.; Gataullin, M.; Gentit, F.X.; Ghezzi, A.; Givernaud, A.; Gninenko, S.; Go, A.; Gobbo, B.; Godinovic, N.; Golubev, N.; Govoni, P.; Grant, N.; Gras, P.; Haguenauer, M.; Hamel de Monchenault, G.; Hansen, M.; Haupt, J.; Heath, H.F.; Heltsley, B.; Cornell U., LNS.; Hintz, W.; Hirosky, R.; Hobson, P.R.; Honma, A.; Hou, G.W.S.; Hsiung, Y.; Huhtinen, M.; Ille, B.; Ingram, Q.; Inyakin, A.; Jarry, P.; Jessop, C.; Jovanovic, D.; Kaadze, K.; Kachanov, V.; Kailas, S.; Kataria, S.K.; Kennedy, B.W.; Kokkas, P.; Kolberg, T.; Korjik, M.; Krasnikov, N.; Krpic, D.; Kubota, Y.; Kuo, C.M.; Kyberd, P.; Kyriakis, A.; Lebeau, M.; Lecomte, P.; Lecoq, P.; Ledovskoy, A.; Lethuillier, M.; Lin, S.W.; Lin, W.; Litvine, V.; Locci, E.; Longo, E.; Loukas, D.; Luckey, P.D.; Lustermann, W.; Ma, Y.; Malberti, M.; Malcles, J.; Maletic, D.; Manthos, N.; Maravin, Y.; Marchica, C.; Marinelli, N.; Markou, A.; Markou, C.; Marone, M.; Matveev, V.; Mavrommatis, C.; Meridiani, P.; Milenovic, P.; Mine, P.; Missevitch, O.; Mohanty, A.K.; Moortgat, F.; Musella, P.; Musienko, Y.; Nardulli, A.; Nash, J.; Nedelec, P.; Negri, P.; Newman, H.B.; Nikitenko, A.; Nessi-Tedaldi, F.; Obertino, M.M.; Organtini, G.; Orimoto, T.; Paganoni, M.; Paganini, P.; Palma, A.; Pant, L.; Papadakis, A.; Papadakis, I.; Papadopoulos, I.; Paramatti, R.; Parracho, P.; Pastrone, N.; Patterson, J.R.; Pauss, F.; Peigneux, J.P.; Petrakou, E.; Phillips, D.G.; Piroue, P.; Ptochos, F.; Puljak, I.; Pullia, A.; Punz, T.; Puzovic, J.; Ragazzi, S.; Rahatlou, S.; Rander, J.; Razis, P.A.; Redaelli, N.; Renker, D.; Reucroft, S.; Ribeiro, P.; Rogan, C.; Ronquest, M.; Rosowsky, A.; Rovelli, C.; Rumerio, P.; Rusack, R.; Rusakov, S.V.; Ryan, M.J.; Sala, L.; Salerno, R.; Schneegans, M.; Seez, C.; Sharp, P.; Shepherd-Themistocleous, C.H.; Shiu, J.G.; Shivpuri, R.K.; Shukla, P.; Siamitros, C.; Sillou, D.; Silva, J.; Silva, P.; Singovsky, A.; Sirois, Y.; Sirunyan, A.; Smith, V.J.; Stockli, F.; Swain, J.; Tabarelli de Fatis, T.; Takahashi, M.; Tancini, V.; Teller, O.; Theofilatos, K.; Thiebaux, C.; Timciuc, V.; Timlin, C.; Titov, Maxim P.; Topkar, A.; Triantis, F.A.; Troshin, S.; Tyurin, N.; Ueno, K.; Uzunian, A.; Varela, J.; Verrecchia, P.; Veverka, J.; Virdee, T.; Wang, M.; Wardrope, D.; Weber, M.; Weng, J.; Williams, J.H.; Yang, Y.; Yaselli, I.; Yohay, R.; Zabi, A.; Zelepoukine, S.; Zhang, J.; Zhang, L.Y.; Zhu, K.; Zhu, R.Y.

    2010-01-01

    Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews the related scientific and technological problems encountered.

  6. Development of radiation hard components for ITER blanket remote handling system

    Energy Technology Data Exchange (ETDEWEB)

    Saito, Makiko, E-mail: saito.makiko@jaea.go.jp; Anzai, Katsunori; Maruyama, Takahito; Noguchi, Yuto; Ueno, Kenichi; Takeda, Nobukazu; Kakudate, Satoshi

    2016-11-01

    Highlights: • Clarify the components that will degrade by gamma ray irradiation. • Perform the irradiation tests to BRHS components. • Optimize the materials to increase the radiation hardness. - Abstract: The ITER blanket remote handling system (BRHS) will be operated in a high radiation environment (250 Gy/h max.) and must stably handle the blanket modules, which weigh 4.5 t and are more than 1.5 m in length, with a high degree of position and posture accuracy. The reliability of the system can be improved by reviewing the failure events of the system caused by high radiation. A failure mode and effects analysis (FMEA) identified failure modes and determined that lubricants, O-rings, and electric insulation cables were the dominant components affecting radiation hardness. Accordingly, we tried to optimize the lubricants and cables of the AC servo motors by using polyphenyl ether (PPE)-based grease and polyether ether ketone (PEEK), respectively. Materials containing radiation protective agents were also selected for the cable sheaths and O-rings to improve radiation hardness. Gamma ray irradiation tests were performed on these components and as a result, a radiation hardness of 8 MGy was achieved for the AC servo motors. On the other hand, to develop the radiation hardness and BRHS compatibility furthermore, the improvement of materials of cable and O ring were performed.

  7. Study of hard braking x-ray radiation on the radiation-beam complex ''TEMP''

    International Nuclear Information System (INIS)

    Batrakov, A.B.; Glushko, E.G.; Egorov, A.M.; Zinchenko, A.A.; Litvinenko, V.V.; Lonin, Yu.F.; Ponomarev, A.G.; Rybka, A.V.; Fedotov, S.I.; Uvarov, V.T.

    2015-01-01

    A calculation over of basic parameters of the hard brake x-rayed radiation for the microsecond accelerating of relativistic electronic beam T EMP . Optimization of converters is conducted for these aims. Maximal doses are experimentally got brake x-rayed radiation on beam-radiation complex T EMP . The diagrams of orientation of the brake x-rayed radiation are taken off depending on energies of bunches and forms of electrodes.

  8. Hardness measurements of silicon rubber and polyurethane rubber cured by ionizing radiation

    International Nuclear Information System (INIS)

    Basfar, A.A.

    1995-01-01

    This work investigates the hardness of both silicon rubber and polyurethane rubber cured by ionizing radiation. Shore A Hardness is used to characterize the subject elastomers in relation to the crosslinking process. Various formulations of both materials have been investigated in order to achieve the optimum cure conditions desired. A small amount of the curing agent has been incorporated in some formulations in order to reduce the required dose to achieve full cure conditions. Silicon rubber has shown improvements in hardness as absorbed dose is increased, whereas hardness remained constant over a range of absorbed doses for polyurethane rubber

  9. Radiation Hard and High Light Yield Scintillator Search for CMS Phase II Upgrade

    CERN Document Server

    Tiras, Emrah

    2015-01-01

    The CMS detector at the LHC requires a major upgrade to cope with the higher instantaneous luminosity and the elevated radiation levels. The active media of the forward backing hadron calorimeters is projected to be radiation-hard, high light yield scintillation materials or similar alternatives. In this context, we have studied various radiation-hard scintillating materials such as Polyethylene Terephthalate (PET), Polyethylene Naphthalate (PEN), High Efficiency Mirror (HEM) and quartz plates with various coatings. The quartz plates are pure Cerenkov radiators and their radiation hardness has been confirmed. In order to increase the light output, we considered organic and inorganic coating materials such as p-Terphenyl (pTp), Anthracene and Gallium-doped Zinc Oxide (ZnO Ga) that are applied as thin layers on the surface of the quartz plates. Here, we present the results of the related test beam activities, laboratory measurements and recent developments.

  10. Integration of Radiation-Hard Magnetic Random Access Memory with CMOS ICs

    CERN Document Server

    Cerjan, C J

    2000-01-01

    The research undertaken in this LDRD-funded project addressed the joint development of magnetic material-based nonvolatile, radiation-hard memory cells with Sandia National Laboratory. Specifically, the goal of this project was to demonstrate the intrinsic radiation-hardness of Giant Magneto-Resistive (GMR) materials by depositing representative alloy combinations upon radiation-hardened silicon-based integrated circuits. All of the stated goals of the project were achieved successfully. The necessary films were successfully deposited upon typical integrated circuits; the materials retained their magnetic field response at the highest radiation doses; and a patterning approach was developed that did not degrade the as-fabricated properties of the underlying circuitry. These results establish the feasibility of building radiation-hard magnetic memory cells.

  11. Multi-sensor radiation detector system

    International Nuclear Information System (INIS)

    Foster, R.G.; Cyboron, R.D.

    1975-01-01

    The invention is a multi-sensor radiation detection system including a self-powered detector and an ion or fission chamber, preferably joined as a unitary structure, for removable insertion into a nuclear reactor. The detector and chamber are connected electrically in parallel, requiring but two conductors extending out of the reactor to external electrical circuitry which includes a load impedance, a voltage source, and switch means. The switch means are employed to alternately connect the detector and chamber either with th load impedance or with the load impedance and the voltage source. In the former orientation, current through the load impedance indicates flux intensity at the self-powered detector and in the latter orientation, the current indicates flux intensity at the detector and fission chamber, though almost all of the current is contributed by the fission chamber. (auth)

  12. An investigation of medical radiation detection using CMOS image sensors in smartphones

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Han Gyu [Department of Senior Healthcare, Graduate School of Eulji University, Daejeon 301-746 (Korea, Republic of); Song, Jae-Jun [Department of Otorhinolaryngology-Head & Neck Surgery, Korea University, Guro Hospital,148, Gurodong-ro, Guro-gu, Seoul 152-703 (Korea, Republic of); Lee, Kwonhee [Graduate Program in Bio-medical Science, Korea University, 2511 Sejong-ro, Sejong City 339-770 (Korea, Republic of); Nam, Ki Chang [Department of Medical Engineering, College of Medicine, Dongguk University, 32 Dongguk-ro, Goyang-si, Gyeonggi-do 410-820 (Korea, Republic of); Hong, Seong Jong; Kim, Ho Chul [Department of Radiological Science, Eulji University, 553 Yangji-dong, Sujeong-gu, Seongnam-si, Gyeonggi-do 431-713 (Korea, Republic of)

    2016-07-01

    Medical radiation exposure to patients has increased with the development of diagnostic X-ray devices and multi-channel computed tomography (CT). Despite the fact that the low-dose CT technique can significantly reduce medical radiation exposure to patients, the increasing number of CT examinations has increased the total medical radiation exposure to patients. Therefore, medical radiation exposure to patients should be monitored to prevent cancers caused by diagnostic radiation. However, without using thermoluminescence or glass dosimeters, it is hardly measure doses received by patients during medical examinations accurately. Hence, it is necessary to develop radiation monitoring devices and algorithms that are reasonably priced and have superior radiation detection efficiencies. The aim of this study is to investigate the feasibility of medical dose measurement using complementary metal oxide semiconductor (CMOS) sensors in smartphone cameras with an algorithm to extract the X-ray interacted pixels. We characterized the responses of the CMOS sensors in a smartphone with respect to the X-rays generated by a general diagnostic X-ray system. The characteristics of the CMOS sensors in a smartphone camera, such as dose response linearity, dose rate dependence, energy dependence, angular dependence, and minimum detectable activity were evaluated. The high energy gamma-ray of 662 keV from Cs-137 can be detected using the smartphone camera. The smartphone cameras which employ the developed algorithm can detect medical radiations.

  13. An investigation of medical radiation detection using CMOS image sensors in smartphones

    International Nuclear Information System (INIS)

    Kang, Han Gyu; Song, Jae-Jun; Lee, Kwonhee; Nam, Ki Chang; Hong, Seong Jong; Kim, Ho Chul

    2016-01-01

    Medical radiation exposure to patients has increased with the development of diagnostic X-ray devices and multi-channel computed tomography (CT). Despite the fact that the low-dose CT technique can significantly reduce medical radiation exposure to patients, the increasing number of CT examinations has increased the total medical radiation exposure to patients. Therefore, medical radiation exposure to patients should be monitored to prevent cancers caused by diagnostic radiation. However, without using thermoluminescence or glass dosimeters, it is hardly measure doses received by patients during medical examinations accurately. Hence, it is necessary to develop radiation monitoring devices and algorithms that are reasonably priced and have superior radiation detection efficiencies. The aim of this study is to investigate the feasibility of medical dose measurement using complementary metal oxide semiconductor (CMOS) sensors in smartphone cameras with an algorithm to extract the X-ray interacted pixels. We characterized the responses of the CMOS sensors in a smartphone with respect to the X-rays generated by a general diagnostic X-ray system. The characteristics of the CMOS sensors in a smartphone camera, such as dose response linearity, dose rate dependence, energy dependence, angular dependence, and minimum detectable activity were evaluated. The high energy gamma-ray of 662 keV from Cs-137 can be detected using the smartphone camera. The smartphone cameras which employ the developed algorithm can detect medical radiations.

  14. Radiation hard analog circuits for ALICE ITS upgrade

    OpenAIRE

    Gajanana, D; Gromov, V; Kuijer, P; Kugathasan, T; Snoeys, W

    2016-01-01

    The ALICE experiment is planning to upgrade the ITS (Inner Tracking System) [1] detector during the LS2 shutdown. The present ITS will be fully replaced with a new one entirely based on CMOS monolithic pixel sensor chips fabricated in TowerJazz CMOS 0.18 μ m imaging technology. The large (3 cm × 1.5 cm  = 4.5 cm(2)) ALPIDE (ALICE PIxel DEtector) sensor chip contains about 500 Kpixels, and will be used to cover a 10 m(2) area with 12.5 Gpixels distributed over seven cylindrical layers. The ALP...

  15. Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology

    Science.gov (United States)

    Xapsos, M. A.; Stauffer, C.; Phan, A.; McClure, S. S.; Ladbury, R. L.; Pellish, J. A.; Campola, M. J.; LaBel, K. A.

    2016-01-01

    Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the radiation design margin concept with one of failure probability during a mission.

  16. CeF3(Ba) radiation hard scintillator for electromagnetic calorimeters

    International Nuclear Information System (INIS)

    Aseev, A.A.; Devitsin, E.G.; Kozlov, V.A.; Hovepyan, Yu.I.; Potashov, S.Yu.; Sokolovsky, K.A.; Uvarova, T.V.; Vasilchenko, V.G.

    1992-01-01

    The influence of divalent fluoride dopants BaF 2 , CaF 2 , SrF 2 on radiation and luminescent properties of CeF 3 crystal is studied. A high radiation hardness (>10 8 rad) has been obtained for CeF 3 crystals doped with BaF 2 . (orig.)

  17. Radiation hard analog circuits for ALICE ITS upgrade

    International Nuclear Information System (INIS)

    Gajanana, D.; Gromov, V.; Kuijer, P.; Kugathasan, T.; Snoeys, W.

    2016-01-01

    The ALICE experiment is planning to upgrade the ITS (Inner Tracking System) [1] detector during the LS2 shutdown. The present ITS will be fully replaced with a new one entirely based on CMOS monolithic pixel sensor chips fabricated in TowerJazz CMOS 0.18 μ m imaging technology. The large (3 cm × 1.5 cm  = 4.5 cm 2 ) ALPIDE (ALICE PIxel DEtector) sensor chip contains about 500 Kpixels, and will be used to cover a 10 m 2 area with 12.5 Gpixels distributed over seven cylindrical layers. The ALPOSE chip was designed as a test chip for the various building blocks foreseen in the ALPIDE [2] pixel chip from CERN. The building blocks include: bandgap and Temperature sensor in four different flavours, and LDOs for powering schemes. One flavour of bandgap and temperature sensor will be included in the ALPIDE chip. Power consumption numbers have dropped very significantly making the use of LDOs less interesting, but in this paper all blocks are presented including measurement results before and after irradiation with neutrons to characterize robustness against displacement damage

  18. Radiation hard analog circuits for ALICE ITS upgrade

    Science.gov (United States)

    Gajanana, D.; Gromov, V.; Kuijer, P.; Kugathasan, T.; Snoeys, W.

    2016-03-01

    The ALICE experiment is planning to upgrade the ITS (Inner Tracking System) [1] detector during the LS2 shutdown. The present ITS will be fully replaced with a new one entirely based on CMOS monolithic pixel sensor chips fabricated in TowerJazz CMOS 0.18 μ m imaging technology. The large (3 cm × 1.5 cm = 4.5 cm2) ALPIDE (ALICE PIxel DEtector) sensor chip contains about 500 Kpixels, and will be used to cover a 10 m2 area with 12.5 Gpixels distributed over seven cylindrical layers. The ALPOSE chip was designed as a test chip for the various building blocks foreseen in the ALPIDE [2] pixel chip from CERN. The building blocks include: bandgap and Temperature sensor in four different flavours, and LDOs for powering schemes. One flavour of bandgap and temperature sensor will be included in the ALPIDE chip. Power consumption numbers have dropped very significantly making the use of LDOs less interesting, but in this paper all blocks are presented including measurement results before and after irradiation with neutrons to characterize robustness against displacement damage.

  19. Silicon sensor probing and radiation studies for the LHCb silicon tracker

    International Nuclear Information System (INIS)

    Lois, Cristina

    2006-01-01

    The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

  20. Radiation-hard Silicon Photonics for Future High Energy Physics Experiments

    CERN Document Server

    AUTHOR|(CDS)2089774; Troska, Jan

    Collisions of proton beams in the Large Hadron Collider at CERN produce very high radiation levels in the innermost parts of the particle detectors and enormous amounts of measurement data. Thousands of radiation-hard optical links based on directly-modulated laser diodes are thus installed in the particle detectors to transmit the measurement data to the processing electronics. The radiation levels in the innermost regions of future particle detectors will be much higher than they are now. Alternative solutions to laser-based radiation-hard optical links have to be found since the performance of laser diodes decreases beyond the operation margin of the system when irradiated to sufficiently high radiation levels. Silicon Photonics (SiPh) is currently being investigated as a promising alternative technology. First tests have indeed shown that SiPh Mach-Zehnder modulators (MZMs) are relatively insensitive to a high neutron fluence. However, they showed a strong degradation when exposed to ionizing radiation. ...

  1. Radiation hardness on very front-end for SPD

    International Nuclear Information System (INIS)

    Cano, Xavier; Graciani, Ricardo; Gascon, David; Garrido, Lluis; Bota, Sebastia; Herms, Atila; Comerma, Albert; Riera, Jordi

    2005-01-01

    The calorimeter front-end electronics of the LHCb experiment will be located in a region, which is not protected from radiation. Therefore, all the electronics must be qualified to stand some defined radiation levels. The procedure, measurements and results of an irradiation test for every component of the very front-end SPD detector, which is part of the LHCb calorimeter are presented here. All the tested components, except a custom made ASIC, are commercially available

  2. Radiation hardness of thin Low Gain Avalanche Detectors

    Science.gov (United States)

    Kramberger, G.; Carulla, M.; Cavallaro, E.; Cindro, V.; Flores, D.; Galloway, Z.; Grinstein, S.; Hidalgo, S.; Fadeyev, V.; Lange, J.; Mandić, I.; Medin, G.; Merlos, A.; McKinney-Martinez, F.; Mikuž, M.; Quirion, D.; Pellegrini, G.; Petek, M.; Sadrozinski, H. F.-W.; Seiden, A.; Zavrtanik, M.

    2018-05-01

    Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 μm). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5 ṡ 1015 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (∼300 μm) and offer larger charge collection with respect to detectors without gain layer for fluences gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.

  3. Transition radiation in metal-metal multilayer nanostructures as a medical source of hard x-ray radiation

    International Nuclear Information System (INIS)

    Pokrovsky, A. L.; Kaplan, A. E.; Shkolnikov, P. L.

    2006-01-01

    We show that a periodic metal-metal multilayer nanostructure can serve as an efficient source of hard x-ray transition radiation. Our research effort is aimed at developing an x-ray source for medical applications, which is based on using low-energy relativistic electrons. The approach toward choosing radiator-spacer couples for the generation of hard x-ray resonant transition radiation by few-MeV electrons traversing solid multilayer structures for the energies of interest to medicine (30-50 keV) changes dramatically compared with that for soft x-ray radiation. We show that one of the main factors in achieving the required resonant line is the absence of the contrast of the refractive indices between the spacer and the radiator at the far wings of the radiation line; for that purpose, the optimal spacer, as a rule, should have a higher atomic number than the radiator. Having experimental goals in mind, we have considered also the unwanted effects due to bremsstrahlung radiation, absorption and scattering of radiated photons, detector-related issues, and inhibited coherence of transition radiation due to random deviation of spacing between the layers. Choosing as a model example a Mo-Ag radiator-spacer pair of materials, we demonstrate that the x-ray transition radiation line can be well resolved with the use of spatial and frequency filtering

  4. Study of surface properties of ATLAS12 strip sensors and their radiation resistance

    Energy Technology Data Exchange (ETDEWEB)

    Mikestikova, M., E-mail: mikestik@fzu.cz [Academy of Sciences of the Czech Republic, Institute of Physics, Na Slovance 2, 18221 Prague 8 (Czech Republic); Allport, P.P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J.P.; Wilson, J.A. [School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT (United Kingdom); Kierstead, J.; Kuczewski, P.; Lynn, D. [Brookhaven National Laboratory, Physics Department and Instrumentation Division, Upton, NY 11973-5000 (United States); Hommels, L.B.A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ullan, M. [Centro Nacional de Microelectronica (IMB-CNM, CSIC), Campus UAB-Bellaterra, 08193 Barcelona (Spain); Bloch, I.; Gregor, I.M.; Tackmann, K. [DESY, Notkestrasse 85, 22607 Hamburg (Germany); Hauser, M.; Jakobs, K.; Kuehn, S. [Physikalisches Institut, Universität Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); and others

    2016-09-21

    A radiation hard n{sup +}-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the “ATLAS ITk Strip Sensor collaboration” and produced by Hamamatsu Photonics. Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in “punch-through protection” (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×10{sup 16} n{sub eq}/cm{sup 2}, by reactor neutron fluence of 1×10{sup 15} n{sub eq}/cm{sup 2} and by gamma rays from {sup 60}Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07. - Highlights:

  5. A radiation-hardened two transistor memory cell for monolithic active pixel sensors in STAR experiment

    International Nuclear Information System (INIS)

    Wei, X; Dorokhov, A; Hu, Y; Gao, D

    2011-01-01

    Radiation tolerance of Monolithic Active Pixel Sensors (MAPS) is dramatically decreased when intellectual property (IP) memories are integrated for fast readout application. This paper presents a new solution to improve radiation hardness and avoid latch-up for memory cell design. The tradeoffs among radiation tolerance, area and speed are significantly considered and analyzed. The cell designed in 0.35 μm process satisfies the radiation tolerance requirements of STAR experiment. The cell size is 4.55 x 5.45 μm 2 . This cell is smaller than the IP memory cell based on the same process and is only 26% of a radiation tolerant 6T SRAM cell used in previous contribution. The write access time of the cell is less than 2 ns, while the read access time is 80 ns.

  6. Test on radiation-withstanding properties of sensors

    International Nuclear Information System (INIS)

    Yagi, Hideyuki; Kakuta, Tsunemi; Ara, Katsuyuki

    1986-01-01

    In order to use for the remote operation system or in-line measuring system in the facilities handling radioactive substances, the development of the sensors having strengthened radiation-withstanding performance has been advanced. As a part of it, efforts have been exerted to phenomenologically grasp the radiation effect on various sensors and their materials, and to acquire the basic data. Irradiation test was carried out on solid image pick-up elements, optical parts eddy current sensors, pressure sensitive rubber, photo-electric proximity sensors and others, and the knowledge on their deterioration was obtained. Besides, the sensors and video-cameras having improved radiation-withstanding performance were made for trial, and the performance was tested. The interim report on these test results is made. By a series of the irradiation tests reported here, the basic data required for giving the guideline to the development of radiation withstanding sensors were able to be obtained. But in the present irradiation test, the number of specimens was too small to assure the radiation withstanding performance. In order to improve further the radiation withstanding performance of these sensors, it is necessary to carry out the irradiation test on such elements as condensers, diodes and ICs to accumulate the basic data. (Kako, I.)

  7. Fabrication of advanced military radiation detector sensor and performance evaluation

    International Nuclear Information System (INIS)

    Kang, Sin Yang

    2010-02-01

    Recently, our country is facing a continuous nuclear weapons threat. Therefore, we must have a high-level nuclear weapons protection system. The best protection against nuclear weapons is detecting their use to reduce casualties in our country to a minimum. That means, the development of a military radiation detector is a very important issue. The Korea army is using the 'PDR - 1K portable military radiation surveymeter' in NBC (Nuclear, Biological, Chemical warfare) operations. The PDR - 1K military detector can measure beta and gamma rays only but it cannot detect alpha particles. Because of its characteristics, the Korea army has weaknesses in tactical operations. The PDR - 1K sensor is based on a GM - tube sensor system. For the mechanical structure, detectors utilizing a GM-tube sensor do not work on a high - radiation battlefield and they do not carry out nuclide analysis for fixed electron signal output. In the meantime, the United States of America and Germany are using 'AN/PDR - 77' and 'SVG - 2' that were made from scintillator sensors. They have excellent physical qualities and radiation responses for military use. Also, nuclide analysis is available. Therefore, in this study we fabricated a military - grade scintillator radiation sensor that is able to detect alpha, beta, and gamma - rays to overcome PDR - 1K's weaknesses. Also, physical characteristics and radiation response evaluation for the fabricated sensors was carried out. The alpha - particle sensor and beta - ray sensor were fabricated using a ZnS(Ag) powder state scintillator, and a Saint - Gobain organic plastic scintillator BC-408 panel, respectively. The gamma ray sensor was manufactured using a 10 x 10 x 10 mm 3 CsI(Tl) inorganic scintillator crystal. A detailed explanation follows. The alpha particle sensor was fabricated by using air - brushing method to Zns(Ag) powder scintillator spreading. The ZnS(Ag) layer thickness was 35 μm (detection efficiency: 41%). This alpha - particle sensor

  8. Radiation-hard Optoelectronics for LHC detector upgrades.

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00375195; Newbold, Dave

    A series of upgrades foreseen for the LHC over the next decade will allow the proton-proton collisions to reach the design center of mass energy of 14 TeV and increase the luminosity to five times (High Luminosity-LHC) the design luminosity by 2027. Radiation-tolerant high-speed optical data transmission links will continue to play an important role in the infrastructure of particle physics experiments over the next decade. A new generation of optoelectronics that meet the increased performance and radiation tolerance limits imposed by the increase in the intensity of the collisions at the interaction points are currently being developed. This thesis focuses on the development of a general purpose bi-directional 5 Gb/s radiation tolerant optical transceiver, the Versatile Transceiver (VTRx), for use by the LHC experiments over the next five years, and on exploring the radiation-tolerance of state-of-the art silicon photonics modulators for HL-LHC data transmission applications. The compliance of the VTRx ...

  9. Electromagnetic and nuclear radiation detector using micromechanical sensors

    Science.gov (United States)

    Thundat, Thomas G.; Warmack, Robert J.; Wachter, Eric A.

    2000-01-01

    Electromagnetic and nuclear radiation is detected by micromechanical sensors that can be coated with various interactive materials. As the micromechanical sensors absorb radiation, the sensors bend and/or undergo a shift in resonance characteristics. The bending and resonance changes are detected with high sensitivity by any of several detection methods including optical, capacitive, and piezoresistive methods. Wide bands of the electromagnetic spectrum can be imaged with picoJoule sensitivity, and specific absorptive coatings can be used for selective sensitivity in specific wavelength bands. Microcantilevers coated with optical cross-linking polymers are useful as integrating optical radiation dosimeters. Nuclear radiation dosimetry is possible by fabricating cantilevers from materials that are sensitive to various nuclear particles or radiation. Upon exposure to radiation, the cantilever bends due to stress and its resonance frequency shifts due to changes in elastic properties, based on cantilever shape and properties of the coating.

  10. Study of fast electrons from hard-X radiation

    International Nuclear Information System (INIS)

    Arslanbekov, R.

    1995-01-01

    The goal of this thesis is the study of fast electron dynamics by means of the hard X-ray diagnosis installed in TORE SUPRA and numerical simulations. Fast electrons are generated in the plasma in the presence of the injected lower hybrid (LH) waves. Two aspects are studied in detail: the lower hybrid wave propagation and absorption in a periodically perturbed media and 2-D Fokker-Planck modelling of the fast electron dynamics in the presence of the LH power. Ripple effects on lower hybrid wave propagation and absorption are investigated using the ray tracing technique. A cylindrical equilibrium is first studied and a strong modification of the ray dynamics is predicted. Calculations are carried out in a real toroidal geometry corresponding to TORE SUPRA. It is shown that the lack of toroidal axisymmetry of the magnetic field may result in a modification of the ray evolution even if the global ray evolution is governed by the larger poloidal inhomogeneity. Simulation of LH experiments are performed for TORE SUPRA tokamak which has a large magnetic ripple (7% at the plasma edge). By considering ripple perturbation in LH current drive simulations, a better agreement is found with experimental results, in particular with the hard-X spectra and the current density profiles. In the second part of the thesis, a 2-D modeling of the fast electron dynamics in the velocity phase space is considered, based on the 2-D relativistic electron Fokker-Planck equation. Electron distribution functions obtained are used to calculate non-thermal Bremsstrahlung emission for different TORE SUPRA shots in a wide range of experimental conditions. (J.S.). 168 refs., 93 figs., 1 tab., 3 appendix

  11. Building memristive and radiation hardness TiO{sub 2}-based junctions

    Energy Technology Data Exchange (ETDEWEB)

    Ghenzi, N., E-mail: n.ghenzi@gmail.com [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Rubi, D. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Mangano, E.; Gimenez, G. [Instituto Nacional de Tecnología Industrial (INTI) (Argentina); Lell, J. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Zelcer, A. [Gerencia Química, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Stoliar, P. [ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); IMN, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes (France); and others

    2014-01-01

    We study micro-scale TiO{sub 2} junctions that are suitable to be used as resistive random-access memory nonvolatile devices with radiation hardness memristive properties. The fabrication and structural and electrical characterization of the junctions are presented. We obtained a retentivity of 10{sup 5} s, an endurance of 10{sup 4} cycles and reliable switching with short electrical pulses (time-width below 10 ns). Additionally, the devices were exposed to 25 MeV oxygen ions. Then, we performed electrical measurements comparing pristine and irradiated devices in order to check the feasibility of using these junctions as memory elements with memristive and radiation hardness properties. - Highlights: • We fabricated radiation hardness memristive metal insulator metal junctions. • We characterized the structural properties of the devices. • We showed the feasibility of the junctions as a non-volatile memory.

  12. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-05-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  13. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-03-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  14. Hydrogenated amorphous silicon radiation detectors: Material parameters; radiation hardness; charge collection

    International Nuclear Information System (INIS)

    Qureshi, S.

    1991-01-01

    Properties of hydrogenated amorphous silicon p-i-n diodes relevant to radiation detection applications were studied. The interest in using this material for radiation detection applications in physics and medicine was motivated by its high radiation hardness and the fact that it can be deposited over large area at relatively low cost. Thick, fully depleted a-Si:H diodes are required for sufficient energy deposition by a charged particle and better signal to noise ratio. A sizeable electric field is essential for charge collection in a -Si:H diodes. The large density of ionized defects that exist in the i layer when the diode is under DC bias causes the electric field to be uniform. Material parameters, namely carrier mobility and lifetime and the ionized defect density in thick a-Si:H p-i-n diodes were studied by the transient photoconductivity method. The increase in diode leakage current with reverse bias over the operating bias was consistent with the Poole-Frenkel effect, involving excitation of carriers from neutral defects. The diode noise over the operating voltage range was completely explained in terms of the shot noise component for CR-(RC) 4 (pseudo-Gaussian) shaping at 3 μs shaping time and the noise component at 0 V bias (delta and thermal noise) added in quadrature. Irradiation with 1 Mev neutrons produced no significant degradation in leakage current and noise at fluences exceeding 4 x 10 14 cm -2 . Irradiation with 1.4 Mev proton fluence of 1 x 10 14 cm -2 decreased carrier lifetime by a factor of ∼4. Degradation in leakage current and noise became significant at proton fluence of ∼10 13 cm -2

  15. Miniaturized, low power FGMOSFET radiation sensor and wireless dosimeter system

    KAUST Repository

    Arsalan, Muhammad

    2013-08-27

    A miniaturized floating gate (FG) MOSFET radiation sensor system is disclosed, The sensor preferably comprises a matched pair of sensor and reference FGMOSFETs wherein the sensor FGMOSFET has a larger area floating gate with an extension over a field oxide layer, for accumulation of charge and increased sensitivity. Elimination of a conventional control gate and injector gate reduces capacitance, and increases sensitivity, and allows for fabrication using standard low cost CMOS technology. A sensor system may be provided with integrated signal processing electronics, for monitoring a change in differential channel current I.sub.D, indicative of radiation dose, and an integrated negative bias generator for automatic pre-charging from a low voltage power source. Optionally, the system may be coupled to a wireless transmitter. A compact wireless sensor System on Package solution is presented, suitable for dosimetry for radiotherapy or other biomedical applications.

  16. Miniaturized, low power FGMOSFET radiation sensor and wireless dosimeter system

    KAUST Repository

    Arsalan, Muhammad; Shamim, Atif; Tarr, Nicholas Garry; Roy, Langis

    2013-01-01

    A miniaturized floating gate (FG) MOSFET radiation sensor system is disclosed, The sensor preferably comprises a matched pair of sensor and reference FGMOSFETs wherein the sensor FGMOSFET has a larger area floating gate with an extension over a field oxide layer, for accumulation of charge and increased sensitivity. Elimination of a conventional control gate and injector gate reduces capacitance, and increases sensitivity, and allows for fabrication using standard low cost CMOS technology. A sensor system may be provided with integrated signal processing electronics, for monitoring a change in differential channel current I.sub.D, indicative of radiation dose, and an integrated negative bias generator for automatic pre-charging from a low voltage power source. Optionally, the system may be coupled to a wireless transmitter. A compact wireless sensor System on Package solution is presented, suitable for dosimetry for radiotherapy or other biomedical applications.

  17. GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

    Science.gov (United States)

    Son, Kyung-ah; Liao, Anna; Lung, Gerald; Gallegos, Manuel; Hatakeh, Toshiro; Harris, Richard D.; Scheick, Leif Z.; Smythe, William D.

    2010-01-01

    We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

  18. Radiation Hardness Study of CsI(Tl) Crystals for Belle II Calorimeter

    CERN Document Server

    Matvienko, D V; Sedov, E V; Shwartz, B A

    2017-01-01

    The Belle II calorimeter (at least, its barrel part) consists of CsI(Tl) scintillation crystals which have been used at the Belle experiment. We perform the radiation hardness study of some typical Belle crystals and conclude their light output reductions are acceptable for Belle II experiment where the absorption dose can reach 10 krad during the detector operation. CsI(Tl) crystals have high stablity and low maintenance cost and are considered as possible option for the calorimeter of the future Super-Charm-Tau factory (SCT) in Novosibirsk. Our study demonstrates sufficiently high radiation hardness of CsI(Tl) crystals for SCT conditions.

  19. Radiation hardness of LuAG:Ce and LuAG:Pr scintillator crystals

    CERN Document Server

    Derdzyan, M V; Belsky, A; Dujardin, C; Lecoq, P; Lucchini, M; Ovanesyan, K L; Pauwels, K; Pedrini, C; Petrosyan, A G

    2012-01-01

    Single crystals of LuAG:Ce, LuAG:Pr and un-doped LuAG were grown by the vertical Bridgman method and studied for radiation hardness under gamma-rays with doses in the range 10-10(5) Gy (Co-60). A wide absorption band peaking at around 600 nm springs up in all three types of crystals after the irradiations. The second band peaking at around 375 nm appears in both LuAG:Pr and un-doped LuAG. Compositional variations have been done to reveal the spectral behavior of induced color centers in more detail and to understand their origin. Similarities in behavior of Yb2+ centers in as-grown garnets are found, indicating that radiation induced color centers can be associated with residual trace amounts of Yb present in the raw materials. Un-doped LuAG and LuAG:Ce demonstrate moderate radiation hardness (the induced absorption coefficients being equal to 0.05-0.08 cm(-1) for accumulated doses of 10(3)-10(4) Gy), while LuAG:Pr is less radiation hard. The ways to improve the radiation hardness are discussed.

  20. Micro-discharge noise and radiation damage of silicon microstrip sensors

    International Nuclear Information System (INIS)

    Ohsugi, T.; Iwata, Y.; Ohyama, H.; Ohmoto, T.; Yoshikawa, M.; Handa, T.; Kurino, K.; Fujita, K.; Kitabayashi, H.; Tamura, N.; Hatakenaka, T.; Maeohmichi, M.; Takahata, M.; Nakao, M.; Iwasaki, H.; Kohriki, T.; Terada, S.; Unno, Y.; Takashima, R.; Yamamoto, K.; Yamamura, K.

    1996-01-01

    We have examined experimentally some existing ideas for improving the radiation hardness of silicon microstrip sensors. We confirm that the extended electrode and the deep implant-strip proposed on the basis of simulation studies works effectively to suppress micro-discharge as well as junction breakdown of the bias or guard ring. For an integrated coupling capacitor a double layer structure of SiO 2 and Si 3 N 4 provides better radiation hardness than that of single SiO 2 coupling in our design conditions. The onset voltage of the micro-discharge on the bias/guard ring has been studied for an extended electrode and a floating guard ring. (orig.)

  1. Axial ion-electron emission microscopy of IC radiation hardness

    Science.gov (United States)

    Doyle, B. L.; Vizkelethy, G.; Walsh, D. S.; Swenson, D.

    2002-05-01

    A new system for performing radiation effects microscopy (REM) has been developed at Sandia National Laboratory in Albuquerque. This system combines two entirely new concepts in accelerator physics and nuclear microscopy. A radio frequency quadrupole (RFQ) linac is used to boost the energy of ions accelerated by a conventional Tandem Van de Graaff-Pelletron to velocities of 1.9 MeV/amu. The electronic stopping power for heavy ions is near a maximum at this velocity, and their range is ˜20 μm in Si. These ions therefore represent the most ionizing form of radiation in nature, and are nearly ideal for performing single event effects testing of integrated circuits. Unfortunately, the energy definition of the RFQ-boosted ions is rather poor (˜ a few %), which makes problematic the focussing of such ions to the submicron spots required for REM. To circumvent this problem, we have invented ion electron emission microscopy (IEEM). One can perform REM with the IEEM system without focussing or scanning the ion beam. This is because the position on the sample where each ion strikes is determined by projecting ion-induced secondary electrons at high magnification onto a single electron position sensitive detector. This position signal is then correlated with each REM event. The IEEM system is now mounted along the beam line in an axial geometry so that the ions pass right through the electron detector (which is annular), and all of the electrostatic lenses used for projection. The beam then strikes the sample at normal incidence which results in maximum ion penetration and removes a parallax problem experienced in an earlier system. Details of both the RFQ-booster and the new axial IEEM system are given together with some of the initial results of performing REM on Sandia-manufactured radiation hardened integrated circuits.

  2. Radiation-hard silicon gate bulk CMOS cell family

    International Nuclear Information System (INIS)

    Gibbon, C.F.; Habing, D.H.; Flores, R.S.

    1980-01-01

    A radiation-hardened bulk silicon gate CMOS technology and a topologically simple, high-performance dual-port cell family utilizing this process have been demonstrated. Additional circuits, including a random logic circuit containing 4800 transistors on a 236 x 236 mil die, are presently being designed and processed. Finally, a joint design-process effort is underway to redesign the cell family in reduced design rules; this results in a factor of 2.5 cell size reduction and a factor of 3 decrease in chip interconnect area. Cell performance is correspondingly improved

  3. Radiation-hard optoelectronic data transfer for the CMS tracker

    International Nuclear Information System (INIS)

    Troska, J.K.

    1999-01-01

    An introduction to the physics prospects of future experiments at the CERN Large Hadron Collider (LHC) will be given, along with the rather stringent requirements placed on their detectors by the LHC environment. Emphasis will be placed upon the particle tracking detectors, and the particular problem of their readout systems. The novel analogue optical readout scheme chosen by the Compact Muon Solenoid (CMS) experiment at the LHC will provide the basis for the thesis. The reasons for preferring analogue optical data transmission in CMS will be given, leading to a description of a generic optical readout scheme and its components. The particular scheme chosen by CMS makes as wide as possible use of commercially available components. These will be given greatest importance, with descriptions of component operation and characteristics pertinent to successful readout of the CMS tracker within the constraints of the LHC environment. Of particular concern is the effect of the LHC's harsh radiation environment on the operational characteristics of the readout system and its components. Work on radiation effects in components of the CMS tracker optical readout system will be described. This work includes the effects of ionising (gamma photon) and particle (neutron, proton, pion) irradiation on the operational characteristics and reliability of laser diodes, photodiodes, and optical fibres. System integration issues are discussed in the context of the long-term operation of the full CMS tracker readout system under laboratory conditions. It will be shown that system stability can be maintained even under widely varying ambient conditions. (author)

  4. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

    Energy Technology Data Exchange (ETDEWEB)

    Jungmann-Smith, J. H., E-mail: jsmith@magnet.fsu.edu; Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G. [Paul Scherrer Institute, 5232 Villigen PSI (Switzerland); Cartier, S. [Paul Scherrer Institute, 5232 Villigen PSI (Switzerland); Institute for Biomedical Engineering, University and ETHZ, 8092 Zürich (Switzerland); Medjoubi, K. [Synchrotron Soleil, L’Orme des Merisiers, Saint-Aubin–BP 48, 91192 GIF-sur-Yvette Cedex (France)

    2015-12-15

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10{sup 4} photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm{sup 2} pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm{sup 2}. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  5. Radiation hardness of Ce-doped sol-gel silica fibers for high energy physics applications.

    Science.gov (United States)

    Cova, Francesca; Moretti, Federico; Fasoli, Mauro; Chiodini, Norberto; Pauwels, Kristof; Auffray, Etiennette; Lucchini, Marco Toliman; Baccaro, Stefania; Cemmi, Alessia; Bártová, Hana; Vedda, Anna

    2018-02-15

    The results of irradiation tests on Ce-doped sol-gel silica using x- and γ-rays up to 10 kGy are reported in order to investigate the radiation hardness of this material for high-energy physics applications. Sol-gel silica fibers with Ce concentrations of 0.0125 and 0.05 mol. % are characterized by means of optical absorption and attenuation length measurements before and after irradiation. The two different techniques give comparable results, evidencing the formation of a main broad radiation-induced absorption band, peaking at about 2.2 eV, related to radiation-induced color centers. The results are compared with those obtained on bulk silica. This study reveals that an improvement of the radiation hardness of Ce-doped silica fibers can be achieved by reducing Ce content inside the fiber core, paving the way for further material development.

  6. LHCb: Radiation hard programmable delay line for LHCb Calorimeter Upgrade

    CERN Multimedia

    Mauricio Ferre, J; Vilasís Cardona, X; Picatoste Olloqui, E; Machefert, F; Lefrançois, J; Duarte, O

    2013-01-01

    This poster describes the implementation of a SPI-programmable clock delay chip based on a Delay Locked Loop (DLL) in order to shift the phase of the LHC clock (25 ns) in steps of 1ns, with a 4ps jitter and 18ps of DNL. The delay lines will be integrated into ICECAL, the LHCb calorimeter front-end ASIC in the near future. The stringent noise requirements on the ASIC imply minimizing the noise contribution of digital components. This is accomplished by implementing the DLL in differential mode. To achieve the required radiation tolerance several techniques are applied: double guard rings between PMOS and NMOS transistors as well as glitch suppressors and TMR Registers. This 5.7 mm2 chip has been implemented in CMOS 0.35um technology.

  7. Recent results on the development of radiation-hard diamond detectors

    CERN Document Server

    Conway, J S; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Dabrowski, W; Da Graca, J; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jamieson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Plano, R; Polesello, P; Prawer, S; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Russ, J; Schnetzer, S; Sciortino, S; Somalwar, S V; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Thomson, G B; Trawick, M; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

    1999-01-01

    Charged particle detectors made from chemical vapor deposition (CVD) diamond have radiation hardness greatly exceeding that of silicon- based detectors. The CERN-based RD42 Collaboration has developed and tested CVD diamond microstrip and pixel detectors with an eye to their application in the intense radiation environment near the interaction region of hadron colliders. This paper presents recent results from tests of these detectors. (4 refs).

  8. A theoretical approach to photosynthetically active radiation silicon sensor

    International Nuclear Information System (INIS)

    Tamasi, M.J.L.; Martínez Bogado, M.G.

    2013-01-01

    This paper presents a theoretical approach for the development of low cost radiometers to measure photosynthetically active radiation (PAR). Two alternatives are considered: a) glass optical filters attached to a silicon sensor, and b) dielectric coating on a silicon sensor. The devices proposed are based on radiometers previously developed by the Argentine National Atomic Energy Commission. The objective of this work is to adapt these low cost radiometers to construct reliable instruments for measuring PAR. The transmittance of optical filters and sensor response have been analyzed for different dielectric materials, number of layers deposited, and incidence angles. Uncertainties in thickness of layer deposition were evaluated. - Highlights: • Design of radiometers to measure photosynthetically active radiation • The study has used a filter and a Si sensor to modify spectral response. • Dielectric multilayers on glass and silicon sensor • Spectral response related to different incidence angles, materials and spectra

  9. Radiation hard silicon detectors - developments by the RD48(ROSE) collaboration

    Czech Academy of Sciences Publication Activity Database

    Lindström, G.; Kohout, Z.; Pospíšil, S.; Šícho, Petr; Sopko, B.; Vrba, Václav; Wilhelm, I.

    2001-01-01

    Roč. 466, č. 2 (2001), s. 308-326 ISSN 0168-9002 R&D Projects: GA MŠk LN00A006 Institutional research plan: CEZ:AV0Z1010920 Keywords : silicon detectors * radiation hardness * defect engineering * non ionizing energy los Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.026, year: 2001

  10. RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders

    CERN Document Server

    Balbuena, Juan Pablo; Campabadal, Francesca; Díez, Sergio; Fleta, Celeste; Lozano, Manuel; Pellegrini, Giulio; Rafí, Joan Marc; Ullán, Miguel; Creanza, Donato; De Palma, Mauro; Fedele, Francesca; Manna, Norman; Kierstead, Jim; Li, Zheng; Buda, Manuela; Lazanu, Sorina; Pintilie, Lucian; Pintilie, Ioana; Popa, Andreia-Ioana; Lazanu, Ionel; Collins, Paula; Fahrer, Manuel; Glaser, Maurice; Joram, Christian; Kaska, Katharina; La Rosa, Alessandro; Mekki, Julien; Moll, Michael; Pacifico, Nicola; Pernegger, Heinz; Goessling, Claus; Klingenberg, Reiner; Weber, Jens; Wunstorf, Renate; Roeder, Ralf; Stolze, Dieter; Uebersee, Hartmut; Cihangir, Selcuk; Kwan, Simon; Spiegel, Leonard; Tan, Ping; Bruzzi, Mara; Focardi, Ettore; Menichelli, David; Scaringella, Monica; Breindl, Michael; Eckert, Simon; Köhler, Michael; Kuehn, Susanne; Parzefall, Ulrich; Wiik, Liv; Bates, Richard; Blue, Andrew; Buttar, Craig; Doherty, Freddie; Eklund, Lars; Bates, Alison G; Haddad, Lina; Houston, Sarah; James, Grant; Mathieson, Keith; Melone, J; OShea, Val; Parkes, Chris; Pennicard, David; Buhmann, Peter; Eckstein, Doris; Fretwurst, Eckhart; Hönniger, Frank; Khomenkov, Vladimir; Klanner, Robert; Lindström, Gunnar; Pein, Uwe; Srivastava, Ajay; Härkönen, Jaakko; Lassila-Perini, Katri; Luukka, Panja; Mäenpää, Teppo; Tuominen, Eija; Tuovinen, Esa; Eremin, Vladimir; Ilyashenko, Igor; Ivanov, Alexandr; Kalinina, Evgenia; Lebedev, Alexander; Strokan, Nikita; Verbitskaya, Elena; Barcz, Adam; Brzozowski, Andrzej; Kaminski, Pawel; Kozlowski, Roman; Kozubal, Michal; Luczynski, Zygmunt; Pawlowski, Marius; Surma, Barbara; Zelazko, Jaroslaw; de Boer, Wim; Dierlamm, Alexander; Frey, Martin; Hartmann, Frank; Zhukov, Valery; Barabash, L; Dolgolenko, A; Groza, A; Karpenko, A; Khivrich, V; Lastovetsky, V; Litovchenko, P; Polivtsev, L; Campbell, Duncan; Chilingarov, Alexandre; Fox, Harald; Hughes, Gareth; Jones, Brian Keith; Sloan, Terence; Samadashvili, Nino; Tuuva, Tuure; Affolder, Anthony; Allport, Phillip; Bowcock, Themis; Casse, Gianluigi; Vossebeld, Joost; Cindro, Vladimir; Dolenc, Irena; Kramberger, Gregor; Mandic, Igor; Mikuž, Marko; Zavrtanik, Marko; Zontar, Dejan; Gil, Eduardo Cortina; Grégoire, Ghislain; Lemaitre, Vincent; Militaru, Otilia; Piotrzkowski, Krzysztof; Kazuchits, Nikolai; Makarenko, Leonid; Charron, Sébastien; Genest, Marie-Helene; Houdayer, Alain; Lebel, Celine; Leroy, Claude; Aleev, Andrey; Golubev, Alexander; Grigoriev, Eugene; Karpov, Aleksey; Martemianov, Alxander; Rogozhkin, Sergey; Zaluzhny, Alexandre; Andricek, Ladislav; Beimforde, Michael; Macchiolo, Anna; Moser, Hans-Günther; Nisius, Richard; Richter, Rainer; Gorelov, Igor; Hoeferkamp, Martin; Metcalfe, Jessica; Seidel, Sally; Toms, Konstantin; Hartjes, Fred; Koffeman, Els; van der Graaf, Harry; Visschers, Jan; Kuznetsov, Andrej; Sundnes Løvlie, Lars; Monakhov, Edouard; Svensson, Bengt G; Bisello, Dario; Candelori, Andrea; Litovchenko, Alexei; Pantano, Devis; Rando, Riccardo; Bilei, Gian Mario; Passeri, Daniele; Petasecca, Marco; Pignatel, Giorgio Umberto; Bernardini, Jacopo; Borrello, Laura; Dutta, Suchandra; Fiori, Francesco; Messineo, Alberto; Bohm, Jan; Mikestikova, Marcela; Popule, Jiri; Sicho, Petr; Tomasek, Michal; Vrba, Vaclav; Broz, Jan; Dolezal, Zdenek; Kodys, Peter; Tsvetkov, Alexej; Wilhelm, Ivan; Chren, Dominik; Horazdovsky, Tomas; Kohout, Zdenek; Pospisil, Stanislav; Solar, Michael; Sopko, Vít; Sopko, Bruno; Uher, Josef; Horisberger, Roland; Radicci, Valeria; Rohe, Tilman; Bolla, Gino; Bortoletto, Daniela; Giolo, Kim; Miyamoto, Jun; Rott, Carsten; Roy, Amitava; Shipsey, Ian; Son, SeungHee; Demina, Regina; Korjenevski, Sergey; Grillo, Alexander; Sadrozinski, Hartmut; Schumm, Bruce; Seiden, Abraham; Spence, Ned; Hansen, Thor-Erik; Artuso, Marina; Borgia, Alessandra; Lefeuvre, Gwenaelle; Guskov, J; Marunko, Sergey; Ruzin, Arie; Tylchin, Tamir; Boscardin, Maurizio; Dalla Betta, Gian - Franco; Gregori, Paolo; Piemonte, Claudio; Ronchin, Sabina; Zen, Mario; Zorzi, Nicola; Garcia, Carmen; Lacasta, Carlos; Marco, Ricardo; Marti i Garcia, Salvador; Minano, Mercedes; Soldevila-Serrano, Urmila; Gaubas, Eugenijus; Kadys, Arunas; Kazukauskas, Vaidotas; Sakalauskas, Stanislavas; Storasta, Jurgis; Vidmantis Vaitkus, Juozas; CERN. Geneva. The LHC experiments Committee; LHCC

    2010-01-01

    The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration.

  11. The chemistry of two-component fluoride crystalline optical media for heavy, fast, radiation hard scintillators

    International Nuclear Information System (INIS)

    Sobolev, B.P.; Krivandina, E.A.; Fedorov, P.P.; Vasilchenko, V.G.

    1994-01-01

    Prospects for preparation of two-component dense optical materials for scintillators are shown, using data on phase diagrams of about 300 MF m - RF n (m, n ≤ 4) type systems, formed by metal fluorides. Primary characteristics (decay time and light output of luminescence, radiation hardness, etc.) of some multicomponent crystals are reported

  12. RD50 Status Report 2009/2010 - Radiation hard semiconductor devices for very high luminosity colliders

    CERN Document Server

    Moll, Michael

    2012-01-01

    The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements for the upgrade of the LHC detectors. This document reports on the status of research and main results obtained in the years 2009 and 2010.

  13. Development of a hard x-ray wavefront sensor for the EuXFEL

    Science.gov (United States)

    Berujon, Sebastien; Ziegler, Eric; Cojocaru, Ruxandra; Martin, Thierry

    2017-05-01

    We present developments on a hard X-ray wavefront sensing instrument for characterizing and monitoring the beam of the European X-ray Free Electron Lasers (EuXFEL). The pulsed nature of the intense X-ray beam delivered by this new class of facility gives rise to strong challenges for the optics and their diagnostic. In the frame of the EUCALL project Work Package 7, we are developing a sensor able to observe the beam in the X-ray energy range [8-40] keV without altering it. The sensor is based on the speckle tracking principle and employs two semi-transparent optics optimized such that their X-ray absorption is reduced. Furthermore, this instrument requires a scattering object with small random features placed in the beam and two cameras to record images of the beam at two different propagation distances. The analysis of the speckle pattern and its distortion from one image to the other allows absolute or differential wavefront recovery from pulse to pulse. Herein, we introduce the stakes and challenges of wavefront sensing at an XFEL source and explain the strategies adopted to fulfil the high requirements set by such a source.

  14. Development of radiation hardened pixel sensors for charged particle detection

    CERN Document Server

    Koziel, Michal

    2014-01-01

    CMOS Pixel Sensors are being developed since a few years to equip vertex detectors for future high-energy physics experiments with the crucial advantages of a low material budget and low production costs. The features simultaneously required are a short readout time, high granularity and high tolerance to radiation. This thesis mainly focuses on the radiation tolerance studies. To achieve the targeted readout time (tens of microseconds), the sensor pixel readout was organized in parallel columns restricting in addition the readout to pixels that had collected the signal charge. The pixels became then more complex, and consequently more sensitive to radiation. Different in-pixel architectures were studied and it was concluded that the tolerance to ionizing radiation was limited to 300 krad with the 0.35- m fabrication process currently used, while the targeted value was several Mrad. Improving this situation calls for implementation of the sensors in processes with a smaller feature size which naturally imp...

  15. Intelligent optimization models based on hard-ridge penalty and RBF for forecasting global solar radiation

    International Nuclear Information System (INIS)

    Jiang, He; Dong, Yao; Wang, Jianzhou; Li, Yuqin

    2015-01-01

    Highlights: • CS-hard-ridge-RBF and DE-hard-ridge-RBF are proposed to forecast solar radiation. • Pearson and Apriori algorithm are used to analyze correlations between the data. • Hard-ridge penalty is added to reduce the number of nodes in the hidden layer. • CS algorithm and DE algorithm are used to determine the optimal parameters. • Proposed two models have higher forecasting accuracy than RBF and hard-ridge-RBF. - Abstract: Due to the scarcity of equipment and the high costs of maintenance, far fewer observations of solar radiation are made than observations of temperature, precipitation and other weather factors. Therefore, it is increasingly important to study several relevant meteorological factors to accurately forecast solar radiation. For this research, monthly average global solar radiation and 12 meteorological parameters from 1998 to 2010 at four sites in the United States were collected. Pearson correlation coefficients and Apriori association rules were successfully used to analyze correlations between the data, which provided a basis for these relative parameters as input variables. Two effective and innovative methods were developed to forecast monthly average global solar radiation by converting a RBF neural network into a multiple linear regression problem, adding a hard-ridge penalty to reduce the number of nodes in the hidden layer, and applying intelligent optimization algorithms, such as the cuckoo search algorithm (CS) and differential evolution (DE), to determine the optimal center and scale parameters. The experimental results show that the proposed models produce much more accurate forecasts than other models

  16. Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

    Science.gov (United States)

    Riegel, C.; Backhaus, M.; Van Hoorne, J. W.; Kugathasan, T.; Musa, L.; Pernegger, H.; Riedler, P.; Schaefer, D.; Snoeys, W.; Wagner, W.

    2017-01-01

    A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS technologies, which include part or all of the readout chain, are also investigated offering a reduced cost as they are cheaper per unit area than traditional silicon detectors. If they contain the full readout chain, as for a fully monolithic approach, there is no need for the expensive flip-chip assembly, resulting in a further cost reduction and material savings. In the outer pixel layers of the ATLAS Inner Tracker, the pixel sensors must withstand non-ionising energy losses of up to 1015 n/cm2 and offer a timing resolution of 25 ns or less. This paper presents test results obtained on a monolithic test chip, the TowerJazz 180nm Investigator, towards these specifications. The presented program of radiation hardness and timing studies has been launched to investigate this technology's potential for the new ATLAS Inner Tracker.

  17. Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

    International Nuclear Information System (INIS)

    Riegel, C.; Backhaus, M.; Hoorne, J.W. Van; Kugathasan, T.; Musa, L.; Pernegger, H.; Riedler, P.; Schaefer, D.; Snoeys, W.; Wagner, W.

    2017-01-01

    A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS technologies, which include part or all of the readout chain, are also investigated offering a reduced cost as they are cheaper per unit area than traditional silicon detectors. If they contain the full readout chain, as for a fully monolithic approach, there is no need for the expensive flip-chip assembly, resulting in a further cost reduction and material savings. In the outer pixel layers of the ATLAS Inner Tracker, the pixel sensors must withstand non-ionising energy losses of up to 10 15 n/cm 2 and offer a timing resolution of 25 ns or less. This paper presents test results obtained on a monolithic test chip, the TowerJazz 180nm Investigator, towards these specifications. The presented program of radiation hardness and timing studies has been launched to investigate this technology's potential for the new ATLAS Inner Tracker.

  18. Air temperature sensors: dependence of radiative errors on sensor diameter in precision metrology and meteorology

    Science.gov (United States)

    de Podesta, Michael; Bell, Stephanie; Underwood, Robin

    2018-04-01

    In both meteorological and metrological applications, it is well known that air temperature sensors are susceptible to radiative errors. However, it is not widely known that the radiative error measured by an air temperature sensor in flowing air depends upon the sensor diameter, with smaller sensors reporting values closer to true air temperature. This is not a transient effect related to sensor heat capacity, but a fluid-dynamical effect arising from heat and mass flow in cylindrical geometries. This result has been known historically and is in meteorology text books. However, its significance does not appear to be widely appreciated and, as a consequence, air temperature can be—and probably is being—widely mis-estimated. In this paper, we first review prior descriptions of the ‘sensor size’ effect from the metrological and meteorological literature. We develop a heat transfer model to describe the process for cylindrical sensors, and evaluate the predicted temperature error for a range of sensor sizes and air speeds. We compare these predictions with published predictions and measurements. We report measurements demonstrating this effect in two laboratories at NPL in which the air flow and temperature are exceptionally closely controlled. The results are consistent with the heat-transfer model, and show that the air temperature error is proportional to the square root of the sensor diameter and that, even under good laboratory conditions, it can exceed 0.1 °C for a 6 mm diameter sensor. We then consider the implications of this result. In metrological applications, errors of the order of 0.1 °C are significant, representing limiting uncertainties in dimensional and mass measurements. In meteorological applications, radiative errors can easily be much larger. But in both cases, an understanding of the diameter dependence allows assessment and correction of the radiative error using a multi-sensor technique.

  19. Monitoring system for testing the radiation hardness of a KINTEX-7 FPGA

    Energy Technology Data Exchange (ETDEWEB)

    Cojocariu, L. N., E-mail: lucian.cojocariu@cern.ch [Horia Hulubei National Institute for R& D in Physics and Nuclear Engineering (Reactorului 30, MG, Romania) (Romania); Stefan cel Mare University of Suceava (Universitatii 13, Suceava, Romania) (Romania); Placinta, V. M., E-mail: vlad-mihai.placinta@cern.ch [Horia Hulubei National Institute for R& D in Physics and Nuclear Engineering (Reactorului 30, MG, Romania) (Romania); University POLITEHNICA of Bucharest (Splaiul Independentei 313, Bucharest, Romania) (Romania); Dumitru, L., E-mail: dlaur@nipne.ro [Horia Hulubei National Institute for R& D in Physics and Nuclear Engineering (Reactorului 30, MG, Romania) (Romania)

    2016-03-25

    A much more efficient Ring Imaging Cherenkov sub-detector system will be rebuilt in the second long shutdown of Large Hadron Collider for the LHCb experiment. Radiation-hard electronic components together with Commercial Off-The-Shelf ones will be used in the new Cherenkov photon detection system architecture. An irradiation program was foreseen to determine the radiation tolerance for the new electronic devices, including a Field Programmable Gate Array from KINTEX-7 family of XILINX. An automated test bench for online monitoring of the XC7K70T KINTEX-7 device operation in radiation conditions was designed and implemented by the LHCb Romanian group.

  20. Performance And Radiation Hardness Of The Atlas/sct Detector Module

    CERN Document Server

    Eklund, L

    2003-01-01

    The ATLAS experiment is a general purpose experiment being constructed at the Large Hadron Collider (LHC) at FERN, Geneva. ATLAS is designed to exploit the full physics potential of LHC, in particular to study topics concerning the Higgs mechanism, Super-symmetry and CP violation. The cross sections for the processes under study are extremely small, requiring very high luminosity colliding beams. The Semiconductor Tracker (SCT) is an essential part of the Inner Detector tracking system of ATLAS. The active elements of the SCT is 4088 detector modules, tiled on four barrel cylinders and eighteen endcap disks. As a consequence of the high luminosity, the detector modules will operate in a harsh radiation environment. This thesis describes work concerning radiation hardness, beam test performance and methods for production testing of detector modules. The radiation hardness studies have been focused on the electrical performance of the front-end ASIC and the detector module. The results have identified features ...

  1. Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

    International Nuclear Information System (INIS)

    Clement, J.J.

    1980-01-01

    The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

  2. R and D on Radiation Hard Active Media Based on Quartz Plates

    CERN Document Server

    Onel, Yasar

    2014-01-01

    The need for radiation-hard active media in particle detectors is prominently dictated by the future colliders and the future operations of the Large Hadron Collider. The areas of implementation range from calorimetry to beamline instrumentation to specialized forward detectors e.g. luminosity monitors. In this context, we developed the idea of utilizing quartz plates with various surface coating properties as the active medium for such detectors. Plain quartz is a pure Cerenkov radiator which has quite limited photostatistics. In order to improve the efficiency of the photodetection, various methods were investigated including radiation hard wavelength shifters, p-terphenyl or 4pct gallium doped zinc oxide. The readout options include direct coupling of the photodetector to the quartz plate, or fibers. We have studied various geometries and readout options and constructed calorimeter prototypes. Here we report on the results of the previous tests, and the recent developments, which enable several factors of ...

  3. Differential multi-MOSFET nuclear radiation sensor

    Science.gov (United States)

    Deoliveira, W. A.

    1977-01-01

    Circuit allows minimization of thermal-drift errors, low power consumption, operation over wide dynamic range, improved sensitivity and stability with metaloxide-semiconductor field-effect transistor sensors.

  4. Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip

    International Nuclear Information System (INIS)

    Platkevic, M; Jakubek, J; Jakubek, M; Pospisil, S; Zemlicka, J; Havranek, V; Semian, V

    2013-01-01

    Studies of radiation hardness of silicon sensors are standardly performed with single-pad detectors evaluating their global electrical properties. In this work we introduce a technique to visualize and determine the spatial distribution of radiation damage across the area of a semiconductor sensor. The sensor properties such as charge collection efficiency and charge diffusion were evaluated locally at many points of the sensor creating 2D maps. For this purpose we used a silicon sensor bump bonded to the pixelated Timepix read-out chip. This device, operated in Time-over-threshold (TOT) mode, allows for the direct energy measurement in each pixel. Selected regions of the sensor were intentionally damaged by defined doses (up to 10 12 particles/cm 2 ) of energetic protons (of 2.5 and 4 MeV). The extent of the damage was measured in terms of the detector response to the same ions. This procedure was performed either on-line during irradiation or off-line after it. The response of the detector to each single particle was analyzed determining the charge collection efficiency and lateral charge diffusion. We evaluated the changes of these parameters as a function of radiation dose. These features are related to the local properties such as the spatial homogeneity of the sensor. The effect of radiation damage was also independently investigated measuring local changes of signal response to γ, and X rays and alpha particles.

  5. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    International Nuclear Information System (INIS)

    Sun, Ke-Xun; MacNeil, Lawrence; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-01-01

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 10 15 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 10 12 protons/cm 2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2 x 10 12 protons/cm 2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have

  6. PAVENET OS: A Compact Hard Real-Time Operating System for Precise Sampling in Wireless Sensor Networks

    Science.gov (United States)

    Saruwatari, Shunsuke; Suzuki, Makoto; Morikawa, Hiroyuki

    The paper shows a compact hard real-time operating system for wireless sensor nodes called PAVENET OS. PAVENET OS provides hybrid multithreading: preemptive multithreading and cooperative multithreading. Both of the multithreading are optimized for two kinds of tasks on wireless sensor networks, and those are real-time tasks and best-effort ones. PAVENET OS can efficiently perform hard real-time tasks that cannot be performed by TinyOS. The paper demonstrates the hybrid multithreading realizes compactness and low overheads, which are comparable to those of TinyOS, through quantitative evaluation. The evaluation results show PAVENET OS performs 100 Hz sensor sampling with 0.01% jitter while performing wireless communication tasks, whereas optimized TinyOS has 0.62% jitter. In addition, PAVENET OS has a small footprint and low overheads (minimum RAM size: 29 bytes, minimum ROM size: 490 bytes, minimum task switch time: 23 cycles).

  7. Optical Fibre Temperature Sensor Based On A Blackbody Radiation

    Science.gov (United States)

    Hypszer, Ryszard; Plucinski, Jerzy; Wierzba, Henryk J.

    1990-01-01

    The principle of operation of the fibre optical temperature sensor based on a blackbody radiation and its construction model is given in the paper. A quartz rod of 0.6 mm diameter and 20 cm length with a blackbody cavity at the one end was used to construct the sensor. The cavity was made by vacuum evaporation of a chromium layer and a silicone monooxide layer was used as a protection. Infrared radiation is transmitted by the fibre optic to the detection circuit. This sensor enables temperature measurement from 400 to 1200°C. The range of measurement is determined by the detection sensitivity and by rod softening. The resolution is of the order of 10-2°C. The sensor calibration was done by using PtRh1O-Pt thermocouple.

  8. Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Rasouli, C.; Pourshahab, B.; Rasouli, H. [Plasma Physics and Nuclear Fusion Research School, Nuclear Science and Technology Research Institute, AEOI, PO Box 14155-1339, Tehran (Iran, Islamic Republic of); Hosseini Pooya, S. M.; Orouji, T. [Radiation Application Research School, Nuclear Science and Technology Research Institute, AEOI, PO Box 14155-1339, Tehran (Iran, Islamic Republic of)

    2014-05-15

    In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points – three TLDs per point – to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

  9. Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Qingyu

    2008-10-17

    The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

  10. Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

    International Nuclear Information System (INIS)

    Wei, Qingyu

    2008-01-01

    The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

  11. 3D radiation sensors with three dimensional electrodes

    CERN Document Server

    Da Via, Cinzia; Parker, Sherwood

    2018-01-01

    This book covers the technical properties, fabrication details, measurement results and applications of three-dimensional silicon radiation sensors. Such devices are currently used in the ATLAS experiment at the European Centre for Particle Physics (CERN) for particle tracking in high energy physics. They are the radiation hardest devices ever fabricated. They have applications in neutron detection, medical dosimetry and space. Written by the leading names in this field, the book explains to non-experts the essential features of silicon particle detectors, interactions of radiation with matter, radiation damage effects, and micro-fabrication. It also provides an historical view of the above.

  12. Fabrication of advanced military radiation detector sensor and performance evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Sin Yang

    2010-02-15

    Recently, our country is facing a continuous nuclear weapons threat. Therefore, we must have a high-level nuclear weapons protection system. The best protection against nuclear weapons is detecting their use to reduce casualties in our country to a minimum. That means, the development of a military radiation detector is a very important issue. The Korea army is using the 'PDR - 1K portable military radiation surveymeter' in NBC (Nuclear, Biological, Chemical warfare) operations. The PDR - 1K military detector can measure beta and gamma rays only but it cannot detect alpha particles. Because of its characteristics, the Korea army has weaknesses in tactical operations. The PDR - 1K sensor is based on a GM - tube sensor system. For the mechanical structure, detectors utilizing a GM-tube sensor do not work on a high - radiation battlefield and they do not carry out nuclide analysis for fixed electron signal output. In the meantime, the United States of America and Germany are using 'AN/PDR - 77' and 'SVG - 2' that were made from scintillator sensors. They have excellent physical qualities and radiation responses for military use. Also, nuclide analysis is available. Therefore, in this study we fabricated a military - grade scintillator radiation sensor that is able to detect alpha, beta, and gamma - rays to overcome PDR - 1K's weaknesses. Also, physical characteristics and radiation response evaluation for the fabricated sensors was carried out. The alpha - particle sensor and beta - ray sensor were fabricated using a ZnS(Ag) powder state scintillator, and a Saint - Gobain organic plastic scintillator BC-408 panel, respectively. The gamma ray sensor was manufactured using a 10 x 10 x 10 mm{sup 3} CsI(Tl) inorganic scintillator crystal. A detailed explanation follows. The alpha particle sensor was fabricated by using air - brushing method to Zns(Ag) powder scintillator spreading. The ZnS(Ag) layer thickness was 35 {mu}m (detection

  13. Development and Studies of Novel Microfabricated Radiation Hard Scintillation Detectors With High Spatial Resolution

    CERN Document Server

    Mapelli, A; Haguenauer, M; Jiguet, S; Renaud, P; Vico Triviño, N

    2011-01-01

    A new type of scintillation detector is being developed with standard microfabrication techniques. It consists of a dense array of scintillating waveguides obtained by coupling microfluidic channels filled with a liquid scintillator to photodetectors. Easy manipulation of liquid scintillators inside microfluidic devices allow their flushing, renewal, and exchange making the active medium intrinsically radiation hard. Prototype detectors have been fabricated by photostructuration of a radiation hard epoxy resin (SU-8) deposited on silicon wafers and coupled to a multi-anode photomultiplier tube (MAPMT) to read-out the scintillation light. They have been characterized by exciting the liquid scintillator in the 200 micrometers thick microchannels with electrons from a 90Sr yielding approximately 1 photoelectron per impinging Minimum Ionizing Particle (MIP). These promising results demonstrate the concept of microfluidic scintillating detection and are very encouraging for future developments.

  14. Hard synchrotron radiation scattering from a nonideal surface grating from multilayer X-ray mirrors

    International Nuclear Information System (INIS)

    Punegov, V.I.; Nesterets, Ya.I.; Mytnichenko, S.V.; Kovalenko, N.V.; Chernov, V.A.

    2003-01-01

    The hard synchrotron radiation scattering from a multilayer surface grating is theoretically and experimentally investigated. The numerical calculations of angular distribution of scattering intensity from X-ray mirror Ni/C are executed with use of recurrence formulae and statistical dynamical theory of diffraction. It is shown, that the essential role in formation of a diffraction pattern plays a diffuse scattering caused by structure imperfection of a multilayer grating [ru

  15. Silicon Photo-Multiplier Radiation Hardness Tests with a White Neutron Beam

    International Nuclear Information System (INIS)

    Montanari, A.; Tosi, N.; Pietropaolo, A.; Andreotti, M.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Luppi, E.; Cotta Ramusino, A.; Malaguti, R.; Santoro, V.; Tellarini, G.; Tomassetti, L.; De Donato, C.; Reali, E.

    2013-06-01

    We report radiation hardness tests performed, with a white neutron beam, at the Geel Electron Linear Accelerator in Belgium on silicon Photo-Multipliers. These are semiconductor photon detectors made of a square matrix of Geiger-Mode Avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to about 6.2 x 10 9 1-MeV-equivalent neutrons per cm 2 . (authors)

  16. Tritium-Powered Radiation Sensor Network

    Science.gov (United States)

    2015-09-01

    Photomultiplier Tube, Scintillator, Geiger counter, Zigbee, Wireless Network, Radiation detector, Dirty Bomb 16. SECURITY CLASSIFICATION OF: 17...operational lifetime of 150 years. Persistent sensing of the environment with vibration and radiation (electromagnetic [ EM ], acoustic, gamma, etc.) in...Transportation E-field electric field EH electron-hole EM electromagnetic GaAs gallium arsenide GPS global positioning system InGaP indium gallium

  17. A Radiation-Hard Analog Memory In The AVLSI-RA Process

    International Nuclear Information System (INIS)

    Britton, C.L. Jr.; Wintenberg, A.L.; Read, K.F.; Simpson, M.L.; Young, G.R.; Clonts, L.G.; Kennedy, E.J.; Smith, R.S.; Swann, B.K.; Musser, J.A.

    1995-01-01

    A radiation hardened analog memory for an Interpolating Pad Camber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500ns following read enable, an input and output dynamic range of +/-2.25V, a corrected rms pedestal of approximately 5mV or less, and a power dissipation of less than 10mW/channel. The pre- and post-radiation measurements to 5MRad are presented

  18. System tests of radiation hard optical links for the ATLAS semiconductor tracker

    International Nuclear Information System (INIS)

    Charlton, D.G.; Dowell, J.D.; Homer, R.J.; Jovanovic, P.; Kenyon, I.R.; Mahout, G.; Shaylor, H.R.; Wilson, J.A.; Rudge, A.; Fopma, J.; Mandic, I.; Nickerson, R.B.; Shield, P.; Wastie, R.; Weidberg, A.R.; Eek, L.-O.; Go, A.; Lund-Jensen, B.; Pearce, M.; Soederqvist, J.; Morrissey, M.; White, D.J.

    2000-01-01

    A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed

  19. Radiation damage studies on STAR250 CMOS sensor at 300 keV for electron microscopy

    International Nuclear Information System (INIS)

    Faruqi, A.R.; Henderson, R.; Holmes, J.

    2006-01-01

    There is a pressing need for better electronic detectors to replace film for recording high-resolution images using electron cryomicroscopy. Our previous work has shown that direct electron detection in CMOS sensors is promising in terms of resolution and efficiency at 120 keV [A.R. Faruqi, R. Henderson, M. Prydderch, R. Turchetta, P. Allport, A. Evans, Nucl. Instr. and Meth. 546 (2005) 170], but in addition, the detectors must not be damaged by the electron irradiation. We now present new measurements on the radiation tolerance of a 25 μm pitch CMOS active-pixel sensor, the STAR250, which was designed by FillFactory using radiation-hard technology for space applications. Our tests on the STAR250 aimed to establish the imaging performance at 300 keV following irradiation. The residual contrast, measured on shadow images of a 300 mesh grid, was >80% after corrections for increased dark current, following irradiation with up to 5x10 7 electrons/pixel (equivalent to 80,000 electron/μm 2 ). A CMOS sensor with this degree of radiation tolerance would survive a year of normal usage for low-dose electron cryomicroscopy, which is a very useful advance

  20. Evaluation of testing strategies for the radiation tolerant ATLAS n **+-in-n pixel sensor

    CERN Document Server

    Klaiber Lodewigs, Jonas M

    2003-01-01

    The development of particle tracker systems for high fluence environments in new high-energy physics experiments raises new challenges for the development, manufacturing and reliable testing of radiation tolerant components. The ATLAS pixel detector for use at the LHC, CERN, is designed to cover an active sensor area of 1.8 m**2 with 1.1 multiplied by 10 **8 read-out channels usable for a particle fluence up to 10 **1**5 cm**-**2 (1 MeV neutron equivalent) and an ionization dose up to 500 kGy of mainly charged hadron radiation. To cope with such a harsh environment the ATLAS Pixel Collaboration has developed a radiation hard n **+-in-n silicon pixel cell design with a standard cell size of 50 multiplied by 400 mum**2. Using this design on an oxygenated silicon substrate, sensor production has started in 2001. This contribution describes results gained during the development of testing procedures of the ATLAS pixel sensor and evaluates quality assurance procedures regarding their relevance for detector operati...

  1. Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

    Science.gov (United States)

    Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

    2013-09-01

    Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

  2. Performance of semiconductor radiation sensors for simple and low-cost radiation detector

    International Nuclear Information System (INIS)

    Tanimura, Yoshihiko; Birumachi, Atsushi; Yoshida, Makoto; Watanabe, Tamaki

    2008-01-01

    In order to develop a simple but reliable radiation detector for the general public, photon detection performances of radiation sensors have been studied in photon calibration fields and by Monte Carlo simulations. A silicon p-i-n photodiode and a CdTe detector were selected for the low cost sensors. Their energy responses to ambient dose equivalent H * (10) were evaluated over the energy range from 60 keV to 2 MeV. The response of the CdTe decreases markedly with increasing photon energy. On the other hand, the photodiode has the advantage of almost flat response above 150 keV. The sensitivities of these sensors are 4 to 6 cpm for the natural radiation. Detection limits of the radiation level are low enough to know the extreme increase of radiation due to emergency situations of nuclear power plants, fuel treatment facilities and so on. (author)

  3. A review of nanostructured based radiation sensors for neutron

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Pervaiz; Mohamed, Norani Muti; Burhanudin, Zainal Arif [Center of Excellence in Nanotechnology Department of Fundamental and Applied Sciences, Department of Electrical and Electronic Engineering Universiti Teknologi PETRONAS (Malaysia)

    2012-09-26

    Currently radiation sensors with various mechanisms such as radio thermo luminescence, radiographic and radiochromic film, semiconductor and ionization have been used for the detection of nuclear radiation. Sensitivity, handling procedure, heating condition, energy response, nonlinearity, polarization, non-uniform electric field, high bias voltage and spatial resolution due to large physical size are some of the key issues faced by these sensors. Due to the excellent electrical and mechanical properties, nanostructured materials such as carbon nanotubes (CNTs) have been researched as sensing elements in the sensors to overcome the mentioned problems. However CNTs are found to pose different problems, arising from the uncontrolled helicity and small cross-sectional area. Therefore, alternative sensing elements are still been sought after and the possibility of using boron nitride nanotubes for sensing neutron is considered in this review.

  4. CMOS front-end electronics for radiation sensors

    CERN Document Server

    AUTHOR|(CDS)2071026

    2015-01-01

    This book offers a comprehensive treatment of front-end electronics for radiation detection. It discusses the fundamental principles of signal processing for radiation detectors and describes circuits at the level of functional building blocks, omitting transistor-level implementation. It also covers important system-level topics commonly found in the world of front-end electronics for radiation sensors. The book develops the topics in detail, with a constant focus on practical problems. It also provides real implementation examples that offer insights and stimuli for more experienced engineers already working in the field.

  5. Fabrication and a Study on the Tapered Scintillator Radiation Sensors

    International Nuclear Information System (INIS)

    Kim, Gye Hong

    2003-02-01

    Optical fibers have been investigated for their uses as sensor materials in various nuclear applications. Comprehensive overviews of their potential usages in nuclear environments can be found in the literatures. Optical fibers with doped scintillating elements in the core have drawn special interests as nuclear radiation detectors. The two important functions of a scintillating optical fiber, as a radiation detector, are scintillator (light emitter) and light transmitter. When radiation interacts with the core material, scintillation occurs and resultant lights are transmitted through the fiber to an opto-electronic device such as a photomultiplier tube. Optical fiber sensors have several advantages as compared to other sensors of conventional material. Since they do not require electric power in the sensor part, they are less susceptible to trouble in harsh environments such as underground or underwater. At relatively low cost a multi-point distributed radiation monitoring system could be made using the fiber sensors. Furthermore, unlike the conventional scintillating counters they are not influenced by any magnetic field surrounding them. This study has been conducted to investigate the feasibility of using scintillating optical fibers for the detection of gamma rays emitted by 137 Cs. Several types of gamma-ray sensors have been constructed by packing different numbers of fibers into aluminum tubes, and tested to detect the 137 Cs gamma ray. During the study it has been found that a tapered fibers might be more efficient to collect the lights produced inside the sensor and transfer them into the transmitting fiber. In order to investigate the effectiveness of the tapered fiber, tapered plastic scintillators, composed of polystyrene with minute amount of dPOPOP and PPO or bPBD, have been fabricated and tested for the detection of gamma rays from 1.0, 1.5, 3.0 and 5.0 μCi 137 Cs sources. The pulse height spectra and the relationship between the radioactivity and

  6. Uncooled Radiation Hard Large Area SiC X-ray and EUV Detectors and 2D Arrays, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize large area, uncooled and radiative hard 4H-SiC EUV ? soft X-ray detectors capable of ultra...

  7. Systems for detecting and recording hard corpuscular and electromagnetic radiations using a superconducting element

    International Nuclear Information System (INIS)

    Drukier, A.K.; Valette, Claude; Waysand, Georges.

    1975-01-01

    The invention relates to systems for detecting hard X ray or gamma radiations above 5 keV in energy, intended, for example, for gammagraphy by emission in the biological, anatomic and medical fields. It describes systems of the above type which directly give the image of a radiation distribution, that is to say without intermediate processing. Another purpose of the invention is to provide the devices with main memory measuring the radiation distribution, in other words systems that display the said data for as long as the operator deems necessary and that can be reset, that is to say returned to measuring conditions, immediately. The invention makes use of the properties of type I superconductors [fr

  8. Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

    International Nuclear Information System (INIS)

    Barchuk, I.P.; Kilchitskaya, V.I.; Lysenko, V.S.

    1997-01-01

    In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMR-technique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique

  9. Radiation hardness tests of SiPMs for the JLab Hall D Barrel calorimeter

    International Nuclear Information System (INIS)

    Qiang, Yi; Zorn, Carl; Barbosa, Fernando; Smith, Elton

    2013-01-01

    We report on the measurement of the neutron radiation hardness of silicon photomultipliers (SiPMs) manufactured by Hamamatsu Corporation in Japan and SensL in Ireland. Samples from both companies were irradiated by neutrons created by a 1 GeV electron beam hitting a thin lead target at Jefferson Lab Hall A. More tests regarding the temperature dependence of the neutron radiation damage and self-annealing were performed on Hamamatsu SiPMs using a calibrated Am–Be neutron source from the Jefferson Lab Radiation Control group. As the result of irradiation both dark current and dark rate increase linearly as a function of the 1 MeV equivalent neutron fluence and a temperature dependent self-annealing effect is observed.

  10. Radiation detection and situation management by distributed sensor networks

    International Nuclear Information System (INIS)

    Jan, Frigo; Mielke, Angela; Cai, D. Michael

    2009-01-01

    Detection of radioactive materials in an urban environment usually requires large, portal-monitor-style radiation detectors. However, this may not be a practical solution in many transport scenarios. Alternatively, a distributed sensor network (DSN) could complement portal-style detection of radiological materials through the implementation of arrays of low cost, small heterogeneous sensors with the ability to detect the presence of radioactive materials in a moving vehicle over a specific region. In this paper, we report on the use of a heterogeneous, wireless, distributed sensor network for traffic monitoring in a field demonstration. Through wireless communications, the energy spectra from different radiation detectors are combined to improve the detection confidence. In addition, the DSN exploits other sensor technologies and algorithms to provide additional information about the vehicle, such as its speed, location, class (e.g. car, truck), and license plate number. The sensors are in-situ and data is processed in real-time at each node. Relevant information from each node is sent to a base station computer which is used to assess the movement of radioactive materials

  11. The influence of parotid gland sparing on radiation damages of dental hard tissues.

    Science.gov (United States)

    Hey, Jeremias; Seidel, Johannes; Schweyen, Ramona; Paelecke-Habermann, Yvonne; Vordermark, Dirk; Gernhardt, Christian; Kuhnt, Thomas

    2013-07-01

    The aim of the present study was to evaluate whether radiation damage on dental hard tissue depends on the mean irradiation dose the spared parotid gland is subjected to or on stimulated whole salivary flow rate. Between June 2002 and October 2008, 70 patients with neck and cancer curatively irradiated were included in this study. All patients underwent dental treatment referring to the guidelines and recommendations of the German Society of Dental, Oral and Craniomandibular Sciences prior, during, and after radiotherapy (RT). During the follow-up period of 24 months, damages on dental hard tissues were classified according to the RTOG/EORTC guidelines. The mean doses (D(mean)) during spared parotid gland RT were determined. Stimulated whole saliva secretion flow rates (SFR) were measured before RT and 1, 6, 12, 24 months after RT. Thirty patients showed no carious lesions (group A), 18 patients developed sporadic carious lesions (group B), and 22 patients developed general carious lesions (group C). Group A patients received a D mean of 21.2 ± 11.04 Gy. Group B patients received a D(mean) of 26.5 ± 11.59 Gy and group C patients received a D(mean) of 33.9 ± 9.93 Gy, respectively. The D(mean) of group A was significantly lower than the D(mean) of group C (p dental hard tissue correlates with increased mean irradiation doses as well as decreased salivary flow rates. Parotid gland sparing resulting in a dose below 20 Gy reduces radiation damage on dental hard tissues, and therefore, the dose may act as a predictor for the damage to be expected.

  12. Applications of Elpasolites as a Multimode Radiation Sensor

    Science.gov (United States)

    Guckes, Amber

    This study consists of both computational and experimental investigations. The computational results enabled detector design selections and confirmed experimental results. The experimental results determined that the CLYC scintillation detector can be applied as a functional and field-deployable multimode radiation sensor. The computational study utilized MCNP6 code to investigate the response of CLYC to various incident radiations and to determine the feasibility of its application as a handheld multimode sensor and as a single-scintillator collimated directional detection system. These simulations include: • Characterization of the response of the CLYC scintillator to gamma-rays and neutrons; • Study of the isotopic enrichment of 7Li versus 6Li in the CLYC for optimal detection of both thermal neutrons and fast neutrons; • Analysis of collimator designs to determine the optimal collimator for the single CLYC sensor directional detection system to assay gamma rays and neutrons; Simulations of a handheld CLYC multimode sensor and a single CLYC scintillator collimated directional detection system with the optimized collimator to determine the feasibility of detecting nuclear materials that could be encountered during field operations. These nuclear materials include depleted uranium, natural uranium, low-enriched uranium, highly-enriched uranium, reactor-grade plutonium, and weapons-grade plutonium. The experimental study includes the design, construction, and testing of both a handheld CLYC multimode sensor and a single CLYC scintillator collimated directional detection system. Both were designed in the Inventor CAD software and based on results of the computational study to optimize its performance. The handheld CLYC multimode sensor is modular, scalable, low?power, and optimized for high count rates. Commercial?off?the?shelf components were used where possible in order to optimize size, increase robustness, and minimize cost. The handheld CLYC multimode

  13. Development of radiation-hard optical links for the CMS tracker at CERN

    International Nuclear Information System (INIS)

    Vasey, F.; Arbet-Engels, V.; Cervelli, G.; Gill, K.; Grabit, R.; Mommaert, C.; Stefanini, G.

    1998-01-01

    A radiation-hard optical link is under development for readout and control of the tracking detector in the future CMS experiment at the CERN Large Hadron Collider. The authors present the optical system architecture based on edge-emitting InGaAsP laser-diode transmitters operating at a wavelength of 1.3 microm, single mode fiber ribbons, multi-way connectors and InGaAsP in photodiode receivers. They report on radiation hardness tests of lasers, photodiodes, fibers and connectors. Increases of laser threshold and pin leakage currents with hadron fluence have been observed together with decreases in laser slope-efficiency and photodiode responsivity. Short lengths of single-mode optical fiber and multi-way connectors have been found to be little affected by radiation damage. They analyze the analog and digital performance of prototype optical links transmitting data generated at a 40 MSample/s rate. Distortion, settling time, bandwidth, noise, dynamic range and bit-error-rate results are discussed

  14. A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology

    CERN Multimedia

    2002-01-01

    % RD-9 A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology \\\\ \\\\Radiation hardened SOI-CMOS (Silicon-On-Insulator, Complementary Metal-Oxide- \\linebreak Semiconductor planar microelectronic circuit technology) was a likely candidate technology for mixed analog-digital signal processing electronics in experiments at the future high luminosity hadron colliders. We have studied the analog characteristics of circuit designs realized in the Thomson TCS radiation hard technologies HSOI3-HD. The feature size of this technology was 1.2 $\\mu$m. We have irradiated several devices up to 25~Mrad and 3.10$^{14}$ neutrons cm$^{-2}$. Gain, noise characteristics and speed have been measured. Irradiation introduces a degradation which in the interesting bandwidth of 0.01~MHz~-~1~MHz is less than 40\\%. \\\\ \\\\Some specific SOI phenomena have been studied in detail, like the influence on the noise spectrum of series resistence in the thin silicon film that constitutes the body of the transistor...

  15. Radiation hardness of a single crystal CVD diamond detector for MeV energy protons

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Yuki, E-mail: y.sato@riken.jp [The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Shimaoka, Takehiro; Kaneko, Junichi H. [Graduate School of Engineering, Hokkaido University, N13, W8, Sapporo 060-8628 (Japan); Murakami, Hiroyuki [The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Isobe, Mitsutaka; Osakabe, Masaki [National Institute for Fusion Science, 322-6, Oroshi-cho Toki-city, Gifu 509-5292 (Japan); Tsubota, Masakatsu [Graduate School of Engineering, Hokkaido University, N13, W8, Sapporo 060-8628 (Japan); Ochiai, Kentaro [Fusion Research and Development Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Chayahara, Akiyoshi; Umezawa, Hitoshi; Shikata, Shinichi [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

    2015-06-01

    We have fabricated a particle detector using single crystal diamond grown by chemical vapor deposition. The irradiation dose dependence of the output pulse height from the diamond detector was measured using 3 MeV protons. The pulse height of the output signals from the diamond detector decreases as the amount of irradiation increases at count rates of 1.6–8.9 kcps because of polarization effects inside the diamond crystal. The polarization effect can be cancelled by applying a reverse bias voltage, which restores the pulse heights. Additionally, the radiation hardness performance for MeV energy protons was compared with that of a silicon surface barrier detector.

  16. Silicon photo-multiplier radiation hardness tests with a beam controlled neutron source

    International Nuclear Information System (INIS)

    Angelone, M.; Pillon, M.; Faccini, R.; Pinci, D.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Cotta Ramusino, A.; Malaguti, R.; Pozzati, M.

    2010-01-01

    Radiation hardness tests were performed at the Frascati Neutron Generator on silicon Photo-Multipliers that were made of semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated, integrating up to 7x10 10 1-MeV-equivalent neutrons per cm 2 . Detector performance was recorded during the neutron irradiation, and a gradual deterioration of their properties began after an integrated fluence of the order of 10 8 1-MeV-equivalent neutrons per cm 2 was reached.

  17. Radiation hardness of silicon detectors manufactured on wafers from various sources

    International Nuclear Information System (INIS)

    Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

    1997-01-01

    Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

  18. Cryogenic and radiation-hard asic for interfacing large format NIR/SWIR detector arrays

    Science.gov (United States)

    Gao, Peng; Dupont, Benoit; Dierickx, Bart; Müller, Eric; Verbruggen, Geert; Gielis, Stijn; Valvekens, Ramses

    2017-11-01

    For scientific and earth observation space missions, weight and power consumption is usually a critical factor. In order to obtain better vehicle integration, efficiency and controllability for large format NIR/SWIR detector arrays, a prototype ASIC is designed. It performs multiple detector array interfacing, power regulation and data acquisition operations inside the cryogenic chambers. Both operation commands and imaging data are communicated via the SpaceWire interface which will significantly reduce the number of wire goes in and out the cryogenic chamber. This "ASIC" prototype is realized in 0.18um CMOS technology and is designed for radiation hardness.

  19. Study of Radiation Hardness of Gd2SiO5 scintillator for Heavy Ion Beam

    CERN Document Server

    Kawade, K; Itow, Y; Masuda, K; Murakami, T; Sako,T; Suzuki, K; Suzuki, T; Taki, K

    2011-01-01

    Gd2SiO5 (GSO) scintillator has very excellent radiation resistance, a fast decay time and a large light yield. Because of these features, GSO scintillator is a suitable material for high radiation environment experiments such as those encountered at high energy accelerators. The radiation hardness of GSO has been measured with Carbon ion beams at the Heavy Ion Medical Accelerator in Chiba (HIMAC). During two nights of irradiation the GSO received a total radiation dose of 7 × 10$^5$ Gy and no decrease of light yield was observed. On the other hand an increase of light yield by 25% was observed. The increase is proportional to the total dose, increasing at a rate of 0.025%/Gy and saturating at around 1 kGy. Recovery to the initial light yield was also observed during the day between two nights of radiation exposure. The recovery was observed to have a slow exponential time constant of approximately 1.5 × 10$^4$ seconds together with a faster component. In case of the LHCf experiment, a very forward region ex...

  20. Low power consumption and high temperature durability for radiation sensor

    International Nuclear Information System (INIS)

    Matsumoto, Yoshinori; Ueno, Hiroto

    2015-01-01

    Low power consumption and high temperature operation are important in an environmental monitoring system. The power consumption of 3 mW is achieved for the radiation sensor using low voltage operational amplifier and comparator in the signal processing circuit. The leakage reverse current of photodiode causes the charge amplifier saturation over 50degC. High temperature durability was improved by optimizing the circuit configuration and the values of feedback resistance and capacitance in the charge amplifier. The pulse response of the radiation sensor was measured up to 55degC. The custom detection circuit was designed by 0.6 μm CMOS process at 5-V supply voltage. The operation temperature was improved up to 65degC. (author)

  1. P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environment

    CERN Document Server

    AUTHOR|(CDS)2084505

    2015-01-01

    In order to determine the most radiation hard silicon sensors for the CMS Experiment after the Phase II Upgrade in 2023 a comprehensive study of silicon sensors after a fluence of up to $1.5\\times10^{15} n_{eq}/cm^{2}$ corresponding to $3000 fb^{-1}$ after the HL-LHC era has been carried out. The results led to the decision that the future Outer Tracker (20~cm${<}R{<}$110~cm) of CMS will consist of n-in-p type sensors. This technology is more radiation hard but also the manufacturing is more challenging compared to p-in-n type sensors due to additional process steps in order to suppress the accumulation of electrons between the readout strips. One possible isolation technique of adjacent strips is the p-stop structure which is a p-type material implantation with a certain pattern for each individual strip. However, electrical breakdown and charge collection studies indicate that the process parameters of the p-stop structure have to be carefully calibrated in order to achieve a sufficient strip isolatio...

  2. The radiation hardness of silica optical fiber used in the LED-fiber monitor of BLM and BESIII EMC

    International Nuclear Information System (INIS)

    Xue Zhen; Hu Tao; Fang Jian; Xu Zizong; Wang Xiaolian; Lü Junguang; Zhou Li; Cai Xiao; Yu Boxiang; Wang Zhigang; Sun Lijun; Sun Xilei; Zhang Aiwu

    2012-01-01

    LED-fiber system has been used to monitor BLM and BESIII EMC. A radiation hard silica optical fiber is essential for its stability and reliability. Three types of silica optical fibers, silicone-clad silica optical fiber with high OH - content (SeCS), silica-clad silica optical fiber with low OH - content (SCSL) and silica-clad silica opical fiber with high OH - content (SCSH) were studied. In the experiment, 12 groups of fiber samples were irradiated by 60 Co and 3 groups of fiber samples were irradiated by BEPCII background radiation. Radiation hardness: the radiation hardness of SCSH is best and meets the radiation hardness requirement for LED-fiber monitor of BLM and BESIII EMC. The transmission of SeCS and SCSH decreased to around 80% under the 60 Co-irradiation of 5 Gy and 10 Gy, respectively. The radiation hardness of SeCS is worst because of its silicone cladding. Recovery characteristics: 60 Co-irradiated by the same doses, there were both more annealable and more permanent color centers formed in SeCS than SCSL, and for the same kind of fibers, as long as the irradiated doses are under a certain amount (for example, less than 5 Gy for SeCS), the higher the doses, both the more annealable and the more permanent color centers are formed.

  3. Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.

    Science.gov (United States)

    McMorrow, Julian J; Cress, Cory D; Gaviria Rojas, William A; Geier, Michael L; Marks, Tobin J; Hersam, Mark C

    2017-03-28

    Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.

  4. Effects of device scaling and geometry on MOS radiation hardness assurance

    International Nuclear Information System (INIS)

    Shaneyfelt, M.R.; Fleetwood, D.M.; Winokur, P.S.; Schwank, J.R.; Meisenheimer, T.L.

    1993-01-01

    In this work the authors investigate the effects of transistor scaling and geometry on radiation hardness. The total dose response is shown to depend strongly on transistor channel length. Specifically, transistors with shorter gate lengths tend to show more negative threshold-voltage shifts during irradiation than transistors with longer gate lengths. Similarly, transistors with longer gate lengths tend to show more positive threshold-voltage shifts during post-irradiation annealing than transistors with shorter gate lengths. These differences in radiation response, caused by differences in transistor size and geometry, will be important to factor into test-structure-to-IC correlations necessary to support cost-effective Qualified Manufacturers List (QML) hardness assurance. Transistors with minimum gate length (more negative ΔV th ) will have a larger effect on standby power supply current for an IC at high dose rates, such as in a weapon environment, where worst-case response is associated with negative threshold-voltage shifts during irradiation. On the other hand, transistors with maximum gate length (more positive ΔV th ) will have a larger effect on the timing parameters of an IC at low dose rates, such as in a space environment, where worst-case response is represented by positive threshold-voltage shifts after postirradiation anneal. The channel size and geometry effects they observe cannot be predicted from simple scaling models, but occur because of real differences in oxide-, interface-, and border-trap charge densities among devices of different sizes

  5. Device Simulation of Monolithic Active Pixel Sensors: Radiation Damage Effects

    International Nuclear Information System (INIS)

    Fourches, N.T.

    2009-01-01

    Vertexing for the future International Linear Collider represents a challenging goal because of the high spatial resolution required with low material budget and high ionizing radiation tolerance. CMOS Monolithic Active Pixel Sensors (MAPS) represent a good potential solution for this purpose. Up to now many MAPS sensors have been developed. They are based on various architectures and manufactured in different processes. However, up so far, the sensor diode has not been the subject of extensive modelization and simulation. Published simulation studies of sensor-signal formation have been less numerous than measurements on real sensors. This is a cause for concern because such sensor is physically based on the partially depleted diode, in the vicinity of which the electric field collects the minority carriers generated by an incident MIP (minimum ionizing particle). Although the microscopic mechanisms are well known and modelled, the global physical mechanisms for signal formation are not very rigorously established. This is partly due to the presence of a predominant diffusion component in the charge transport. We present here simulations mainly based on the S-PISCES code, in which physical mechanisms affecting transport are taken into account. Diffusion, influence of residual carrier concentration due to the doping level in the sensitive volume, and more importantly charge trapping due to deep levels in the active (detecting) layer are studied together with geometric aspects. The effect of neutron irradiation is studied to assess the effects of deep traps. A comparison with available experimental data, obtained on processed MAPS before or after neutron irradiation will be introduced. Simulated reconstruction of the Minimum Ionizing Particle (MIP) point of impact in two dimensions is also investigated. For further steps, guidelines for process choices of next Monolithic Active Pixel Sensors are introduced. (authors)

  6. Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

    CERN Document Server

    Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

    1999-01-01

    Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

  7. A Sensor-based System for Monitoring Hard-shoulder Incursions: Review of Technologies and Selection Criteria

    Directory of Open Access Journals (Sweden)

    Michalaki Paraskevi

    2016-01-01

    Full Text Available According to safety observations from motorway operators in the United Kingdom, the hard-shoulder is occasionally violated by road users travelling in the nearside lane. These unintentional movements (hard-shoulder incursions can impose risk to operatives performing activities on the network. To further investigate these events, a sensor-based system can be used for monitoring them and collecting related data such as severity of incursion and vehicle classification. A review of vehicle detection technologies that could be applied for this purpose is presented, along with the criteria for selection of the most suitable technology and implementation sites. Two potential non-intrusive systems are also described, a laser- and a radar-based systems, which provide different levels of flexibility and data.

  8. Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures

    Directory of Open Access Journals (Sweden)

    Evgeny Pikhay

    2017-07-01

    Full Text Available In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sensors. The developed devices are intended for total ionizing dose (TID measurements and fabricated in a standard CMOS process flow. Sensor design and operation is discussed in detail. Original array sensors were suggested and fabricated that allowed high statistical significance of the radiation measurements and radiation imaging functions. Single sensors and array sensors were analyzed in combination with the specially developed test structures. This allowed insight into the physics of sensor operations and exclusion of the phenomena related to material degradation under irradiation in the interpretation of the measurement results. Response of the developed sensors to various sources of ionizing radiation (Gamma, X-ray, UV, energetic ions was investigated. The optimal design of sensor for implementation in dosimetry systems was suggested. The roadmap for future improvement of sensor performance is suggested.

  9. Passive radiation detection using optically active CMOS sensors

    Science.gov (United States)

    Dosiek, Luke; Schalk, Patrick D.

    2013-05-01

    Recently, there have been a number of small-scale and hobbyist successes in employing commodity CMOS-based camera sensors for radiation detection. For example, several smartphone applications initially developed for use in areas near the Fukushima nuclear disaster are capable of detecting radiation using a cell phone camera, provided opaque tape is placed over the lens. In all current useful implementations, it is required that the sensor not be exposed to visible light. We seek to build a system that does not have this restriction. While building such a system would require sophisticated signal processing, it would nevertheless provide great benefits. In addition to fulfilling their primary function of image capture, cameras would also be able to detect unknown radiation sources even when the danger is considered to be low or non-existent. By experimentally profiling the image artifacts generated by gamma ray and β particle impacts, algorithms are developed to identify the unique features of radiation exposure, while discarding optical interaction and thermal noise effects. Preliminary results focus on achieving this goal in a laboratory setting, without regard to integration time or computational complexity. However, future work will seek to address these additional issues.

  10. Cryogenic and radiation hard ASIC design for large format NIR/SWIR detector

    Science.gov (United States)

    Gao, Peng; Dupont, Benoit; Dierickx, Bart; Müller, Eric; Verbruggen, Geert; Gielis, Stijn; Valvekens, Ramses

    2014-10-01

    An ASIC is developed to control and data quantization for large format NIR/SWIR detector arrays. Both cryogenic and space radiation environment issue are considered during the design. Therefore it can be integrated in the cryogenic chamber, which reduces significantly the vast amount of long wires going in and out the cryogenic chamber, i.e. benefits EMI and noise concerns, as well as the power consumption of cooling system and interfacing circuits. In this paper, we will describe the development of this prototype ASIC for image sensor driving and signal processing as well as the testing in both room and cryogenic temperature.

  11. Development of semiconductor radiation sensors for portable alarm-dosimeter

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Y. K.; Moon, B. S.; Chung, C. E.; Hong, S. B.; Kim, J. Y.; Kim, J. B.; Han, S. H.; Lee, W. G. [Korea Atomic Energy Research Institute, Taejeon (Korea)

    2001-01-01

    We studied Semiconductor Radiation Sensors for Portable Alarm-Dosimeter. We calculated response functions for gamma energy 0.021, 0.122, 0.662, 0.835, 1.2 MeV using EGS4 codes. When we measured at various distance from source to detector, the detection efficiency of Si semiconductor detector was better than that of GM tube. The linear absorption coefficients of steel and aluminum plate were measured. These experimental results of the response of detector for intensity of radiation field coincide to the theoretical expectation. The count value of Si detector was changed with changing thickness of steel as changing threshold voltage of discriminator, and the linear absorption coefficient increased with increasing threshold voltage. Radiation detection efficiency shows difference at each threshold voltage condition. This results coincided to the theoretical simulation. 33 refs., 27 figs., 8 tabs. (Author)

  12. Radiation-stimulated processes in transistor temperature sensors

    International Nuclear Information System (INIS)

    Pavlyk, B. V.; Grypa, A. S.

    2016-01-01

    The features of the radiation-stimulated changes in the I–V and C–V characteristics of the emitter–base junction in KT3117 transistors are considered. It is shown that an increase in the current through the emitter junction is observed at the initial stage of irradiation (at doses of D < 4000 Gy for the “passive” irradiation mode and D < 5200 Gy for the “active” mode), which is caused by the effect of radiation-stimulated ordering of the defect-containing structure of the p–n junction. It is also shown that the X-ray irradiation (D < 14000 Gy), the subsequent relaxation (96 h), and thermal annealing (2 h at 400 K) of the transistor temperature sensors under investigation result in an increase in their radiation resistance.

  13. Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project

    CERN Document Server

    Huffman, B T; Arndt, K; Bates, R; Benoit, M; Di Bello, F; Blue, A; Bortoletto, D; Buckland, M; Buttar, C; Caragiulo, P; Das, D; Dopke, J; Dragone, A; Ehrler, F; Fadeyev, V; Galloway, Z; Grabas, H; Gregor, I M; Grenier, P; Grillo, A; Hoeferkamp, M; Hommels, L B A; John, J; Kanisauskas, K; Kenney, C; Kramberger, J; Liang, Z; Mandic, I; Maneuski, D; Martinez-McKinney, F; McMahon, S; Meng, L; Mikuž, M; Muenstermann, D; Nickerson, R; Peric, I; Phillips, P; Plackett, R; Rubbo, F; Segal, J; Seidel, S; Seiden, A; Shipsey, I; Song, W; Stanitzki, M; Su, D; Tamma, C; Turchetta, R; Vigani, L; olk, J; Wang, R; Warren, M; Wilson, F; Worm, S; Xiu, Q; Zhang, J; Zhu, H

    2016-01-01

    The LHC luminosity upgrade, known as the High Luminosity LHC (HL-LHC), will require the replacement of the existing silicon strip tracker and the transistion radiation tracker. Although a baseline design for this tracker exists the ATLAS collaboration and other non-ATLAS groups are exploring the feasibility of using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in a strip-like fashion and would take advantage of the service and support structure already being developed for the upgrade. Two test devices made with theAMSH35 process (a High voltage or HV CMOS process) have been subjected to various radiation environments and have performed well. The results of these tests are presented in this paper.

  14. Hard electronics; Hard electronics

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    Hard material technologies were surveyed to establish the hard electronic technology which offers superior characteristics under hard operational or environmental conditions as compared with conventional Si devices. The following technologies were separately surveyed: (1) The device and integration technologies of wide gap hard semiconductors such as SiC, diamond and nitride, (2) The technology of hard semiconductor devices for vacuum micro- electronics technology, and (3) The technology of hard new material devices for oxides. The formation technology of oxide thin films made remarkable progress after discovery of oxide superconductor materials, resulting in development of an atomic layer growth method and mist deposition method. This leading research is expected to solve such issues difficult to be easily realized by current Si technology as high-power, high-frequency and low-loss devices in power electronics, high temperature-proof and radiation-proof devices in ultimate electronics, and high-speed and dense- integrated devices in information electronics. 432 refs., 136 figs., 15 tabs.

  15. Feasibility Study on Fiber-optic Radiation Sensor for Remote Gamma-ray Spectroscopy

    International Nuclear Information System (INIS)

    Jeon, Hyesu; Jang, Kyoung Won; Shin, Sang Hun and others

    2014-01-01

    In this study, we fabricated a fiber-optic radiation sensor using an optical fiber and various scintillators. To select an adequate inorganic scintillator for the sensing probe of fiber-optic radiation sensor, 5 types of scintillators were evaluated. The spectra of gamma-rays emitted from a Na-22 radiation source were measured by using the manufactured sensors. As a result, the BGO was suitable for the sensing probe of fiber-optic radiation sensor due to its high scintillation output and exact photoelectric peak for the gamma-ray energy. The basic principle of radiation detection is to detect the signals caused by interactions between radiations and materials. There are various types of radiation detectors depending on types of radiation to be detected and physical quantities to be measured. As one of the radiation detectors, a fiber-optic radiation sensor using a scintillator and an optical fiber has two advantages such as no space restraint and remote sensing. Moreover, in nuclear environments, this kind of sensor has immunities for electromagnetic field, temperature, and pressure. Thus, the fiber-optic radiation sensor can be used in various fields including nondestructive inspection, radioactive waste management, nuclear safety, radiodiagnosis and radiation therapy. As a fundamental study of the fiber-optic radiation sensor for remote gamma-ray spectroscopy, in this study, we fabricated a fiber-optic radiation sensor using an optical fiber and various scintillators. To select an adequate inorganic scintillator for the sensing probe of fiber-optic radiation sensor, 5 types of scintillators were evaluated. The spectra of gamma-rays emitted from a Na-22 radiation source were measured by using the manufactured sensors

  16. Radiation-resistant optical sensors and cameras; Strahlungsresistente optische Sensoren und Kameras

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, G. [Imaging and Sensing Technology, Bonn (Germany)

    2008-02-15

    Introducing video technology, i.e. 'TV', specifically in the nuclear field was considered at an early stage. Possibilities to view spaces in nuclear facilities by means of radiation-resistant optical sensors or cameras are presented. These systems are to enable operators to monitor and control visually the processes occurring within such spaces. Camera systems are used, e.g., for remote surveillance of critical components in nuclear power plants and nuclear facilities, and thus contribute also to plant safety. A different application of optical systems resistant to radiation is in the visual inspection of, e.g., reactor pressure vessels and in tracing small parts inside a reactor. Camera systems are also employed in remote disassembly of radioactively contaminated old plants. Unfortunately, the niche market of radiation-resistant camera systems hardly gives rise to the expectation of research funds becoming available for the development of new radiation-resistant optical systems for picture taking and viewing. Current efforts are devoted mainly to improvements of image evaluation and image quality. Other items on the agendas of manufacturers are the reduction in camera size, which is limited by the size of picture tubes, and the increased use of commercial CCD cameras together with adequate shieldings or improved lenses. Consideration is also being given to the use of periphery equipment and to data transmission by LAN, WAN, or Internet links to remote locations. (orig.)

  17. Energy Dependence of Proton Radiation Damage in Si-Sensors

    CERN Document Server

    AUTHOR|(CDS)2084399; Neubüser, C.

    2014-01-01

    Irradiation experiments on silicon sensors are used to mimic the radiation environment at collider experiments with the aim to forecast the change of the electrical properties of a detector with irradiation. Measurements on irradiated sensors are invaluable in choosing a material well suited for a silicon tracking detector. This is especially true for the upgraded detectors to be used in the high-luminosity phase of the LHC (HL-LHC), where silicon sensors as currently used would suffer severe loss in signal from irradiation with charged and neutral hadrons.\\\\ The CMS Tracker Collaboration has initiated irradiation studies with protons with energies ranging from 23 MeV to 23 GeV. They are often used instead of charged hadrons, their radiation induced damage to the silicon being rather similar. However, in oxygen rich silicon, NIEL violation concerning the full depletion voltage has been observed.\\\\ In this paper results from investigations on bulk defects compared to the change of the electrical properties of ...

  18. Adaptive Multichannel Radiation Sensors for Plant Parameter Monitoring

    Science.gov (United States)

    Mollenhauer, Hannes; Remmler, Paul; Schuhmann, Gudrun; Lausch, Angela; Merbach, Ines; Assing, Martin; Mollenhauer, Olaf; Dietrich, Peter; Bumberger, Jan

    2016-04-01

    Nutrients such as nitrogen are playing a key role in the plant life cycle. They are much needed for chlorophyll production and other plant cell components. Therefore, the crop yield is strongly affected by plant nutrient status. Due to the spatial and temporal variability of soil characteristics or swaying agricultural inputs the plant development varies within a field. Thus, the determination of these fluctuations in the plant development is valuable for a detection of stress conditions and optimization of fertilisation due to its high environmental and economic impact. Plant parameters play crucial roles in plant growth estimation and prediction since they are used as indicators of plant performance. Especially indices derived out of remote sensing techniques provide quantitative information about agricultural crops instantaneously, and above all, non-destructively. Due to the specific absorption of certain plant pigments, a characteristic spectral signature can be seen in the visible and IR part of the electromagnetic spectrum, known as narrow-band peaks. In an analogous manner, the presence and concentration of different nutrients cause a characteristic spectral signature. To this end, an adequate remote sensing monitoring concept is needed, considering heterogeneity and dynamic of the plant population and economical aspects. This work will present the development and field investigations of an inexpensive multichannel radiation sensor to observe the incoming and reflected specific parts or rather distinct wavelengths of the solar light spectrum on the crop and facilitate the determination of different plant indices. Based on the selected sensor wavelengths, the sensing device allows the detection of specific parameters, e.g. plant vitality, chlorophyll content or nitrogen content. Besides the improvement of the sensor characteristic, the simple wavelength adaption, and the price-performance ratio, the achievement of appropriate energy efficiency as well as a

  19. Radiation hardness tests of piezoelectric actuators with fast neutrons at liquid helium temperature

    Energy Technology Data Exchange (ETDEWEB)

    Fouaidy, M.; Martinet, G.; Hammoudi, N.; Chatelet, F.; Olivier, A.; Blivet, S.; Galet, F. [CNRS-IN2P3-IPN Orsay, Orsay (France)

    2007-07-01

    Piezoelectric actuators, which are integrated into the cold tuning system and used to compensate the small mechanical deformations of the cavity wall induced by Lorentz forces due to the high electromagnetic surface field, may be located in the radiation environment during particle accelerator operation. In order to provide for a reliable operation of the accelerator, the performance and life time of piezoelectric actuators ({approx}24.000 units for ILC) should not show any significant degradation for long periods (i.e. machine life duration: {approx}20 years), even when subjected to intense radiation (i.e. gamma rays and fast neutrons). An experimental program, aimed at investigating the effect of fast neutrons radiation on the characteristics of piezoelectric actuators at liquid helium temperature (i.e. T{approx}4.2 K), was proposed for the working package WPNo.8 devoted to tuners development in the frame of CARE project. A neutrons irradiation facility, already installed at the CERI cyclotron located at Orleans (France), was upgraded and adapted for actuators irradiations tests purpose. A deuterons beam (maximum energy and beam current: 25 MeV and 35{mu}A) collides with a thin (thickness: 3 mm) beryllium target producing a high neutrons flux with low gamma dose ({approx}20%): a neutrons fluence of more than 10{sup 14} n/cm{sup 2} is achieved in {approx}20 hours of exposure. A dedicated cryostat was developed at IPN Orsay and used previously for radiation hardness test of calibrated cryogenic thermometers and pressure transducers used in LHC superconducting magnets. This cryostat could be operated either with liquid helium or liquid argon. This irradiation facility was upgraded for allowing fast turn-over of experiments and a dedicated experimental set-up was designed, fabricated, installed at CERI and successfully operated for radiation hardness tests of several piezoelectric actuators at T{approx}4.2 K. This new apparatus allows on-line automatic measurements

  20. Radiation hardness tests of piezoelectric actuators with fast neutrons at liquid helium temperature

    International Nuclear Information System (INIS)

    Fouaidy, M.; Martinet, G.; Hammoudi, N.; Chatelet, F.; Olivier, A.; Blivet, S.; Galet, F.

    2007-01-01

    Piezoelectric actuators, which are integrated into the cold tuning system and used to compensate the small mechanical deformations of the cavity wall induced by Lorentz forces due to the high electromagnetic surface field, may be located in the radiation environment during particle accelerator operation. In order to provide for a reliable operation of the accelerator, the performance and life time of piezoelectric actuators (∼24.000 units for ILC) should not show any significant degradation for long periods (i.e. machine life duration: ∼20 years), even when subjected to intense radiation (i.e. gamma rays and fast neutrons). An experimental program, aimed at investigating the effect of fast neutrons radiation on the characteristics of piezoelectric actuators at liquid helium temperature (i.e. T∼4.2 K), was proposed for the working package WPNo.8 devoted to tuners development in the frame of CARE project. A neutrons irradiation facility, already installed at the CERI cyclotron located at Orleans (France), was upgraded and adapted for actuators irradiations tests purpose. A deuterons beam (maximum energy and beam current: 25 MeV and 35μA) collides with a thin (thickness: 3 mm) beryllium target producing a high neutrons flux with low gamma dose (∼20%): a neutrons fluence of more than 10 14 n/cm 2 is achieved in ∼20 hours of exposure. A dedicated cryostat was developed at IPN Orsay and used previously for radiation hardness test of calibrated cryogenic thermometers and pressure transducers used in LHC superconducting magnets. This cryostat could be operated either with liquid helium or liquid argon. This irradiation facility was upgraded for allowing fast turn-over of experiments and a dedicated experimental set-up was designed, fabricated, installed at CERI and successfully operated for radiation hardness tests of several piezoelectric actuators at T∼4.2 K. This new apparatus allows on-line automatic measurements of actuators characteristics and the

  1. Radiation hardness and precision timing study of Silicon Detectors for the CMS High Granularity Calorimeter (HGCAL)

    CERN Document Server

    Curras Rivera, Esteban

    2016-01-01

    The high luminosity LHC (HL-LHC or Phase-II) is expected to increase the instantaneous luminosity of the LHC by a factor of about five, delivering about 250 fba-1 per year between 2025 and 2035. Under these conditions the performance degradation of detectors due to integrated radiation dose/fluence will need to be addressed. The CMS collaboration is planning to upgrade many components, including the forward calorimeters. The replacement for the existing endcap preshower, electromagnetic and hadronic calorimeters is called the High Granularity Calorimeter (HGCAL) and it will be realized as a sampling calorimeter, including 30 layers of silicon detectors totalling 600m^2. The sensors will be realized as pad detectors with cell sizes of between 0.5-1.0 cm^2 and an active thickness between 100 um and 300 um depending on their location in the endcaps the thinner sensors will be used in the highest radiation environment. For an integrated luminosity of 3000 fba-1, the electromagnetic calorimetry will sustain integ...

  2. Radiation hard silicon microstrip detectors for use in ATLAS at CERN

    Energy Technology Data Exchange (ETDEWEB)

    Johansen, Lars Gimmestad

    2005-07-01

    The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

  3. Radiation hard silicon microstrip detectors for use in ATLAS at CERN

    International Nuclear Information System (INIS)

    Johansen, Lars Gimmestad

    2005-06-01

    The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

  4. Life evaluation of FR-CV cable on thermal-radiation combined aging by micro-hardness

    International Nuclear Information System (INIS)

    Sugiyama, Masahiko; Ogata, Akimasa; Nitta, Makoto; Tani, Tsuneo; Yagi, Toshiaki; Seguchi, Tadao.

    1996-01-01

    For the evaluation of cable life for the application to nuclear facilities, the accelerated test was conducted by the combination of radiation and thermal oxidation. The degradation of FR-CV cable by the aging was monitored by tensile test, micro-hardness test, and gel-fraction measurement. The micro-hardness increased with the progress of degradation and related well with decrease of ultimate elongation of the sheath material, and was also reflected by the loss of plasticizer. The micro-hardness technique has a possibility to detect the degradation of cable as a non-destructive detector. (author)

  5. Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Rossini, Lorenzo; The ATLAS collaboration

    2018-01-01

    Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm^2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for b...

  6. Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Rossini, Lorenzo; The ATLAS collaboration

    2018-01-01

    Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High- Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for basic...

  7. A MGy radiation-hardened sensor instrumentation link for nuclear reactor monitoring and remote handling

    Energy Technology Data Exchange (ETDEWEB)

    Verbeeck, Jens; Cao, Ying [KU Leuven - KUL, Div. LRD-MAGyICS, Kasteelpark Arenberg 10, 3001 Heverlee (Belgium); Van Uffelen, Marco; Mont Casellas, Laura; Damiani, Carlo; Morales, Emilio Ruiz; Santana, Roberto Ranz [Fusion for Energy - F4E, c/Josep,n deg. 2, Torres Diagonal Litoral, Ed. B3, 08019 Barcelona (Spain); Meek, Richard; Haist, Bernhard [Oxford Technologies Ltd. OTL, 7 Nuffield Way, Abingdon OX14 1RL (United Kingdom); De Cock, Wouter; Vermeeren, Ludo [SCK-CEN, Boeretang 200, 2400 Mol (Belgium); Steyaert, Michiel [KU Leuven, ESAT-MICAS, KasteelparkArenberg 10, 3001 Heverlee (Belgium); Leroux, Paul [KU Leuven, ESAT-MICAS, KasteelparkArenberg 10, 3001 Heverlee (Belgium)

    2015-07-01

    Decommissioning, dismantling and remote handling applications in nuclear facilities all require robotic solutions that are able to survive in radiation environments. Recently raised safety, radiation hardness and cost efficiency demands from both the nuclear regulatory and the society impose severe challenges in traditional methods. For example, in case of the dismantling of the Fukushima sites, solutions that survive accumulated doses higher than 1 MGy are mandatory. To allow remote operation of these tools in nuclear environments, electronics were used to be shielded with several centimeters of lead or even completely banned in these solutions. However, shielding electronics always leads to bulky and heavy solutions, which reduces the flexibility of robotic tools. It also requires longer repair time and produces extra waste further in a dismantling or decommissioning cycle. In addition, often in current reactor designs, due to size restrictions and the need to inspect very tight areas there are limitations to the use of shielding. A MGy radiation-hardened sensor instrumentation link developed by MAGyICS provides a solution to build a flexible, easy removable and small I and C module with MGy radiation tolerance without any shielding. Hereby it removes all these pains to implement electronics in robotic tools. The demonstrated solution in this poster is developed for ITER Remote Handling equipments operating in high radiation environments (>1 MGy) in and around the Tokamak. In order to obtain adequately accurate instrumentation and control information, as well as to ease the umbilical management, there is a need of front-end electronics that will have to be located close to those actuators and sensors on the remote handling tool. In particular, for diverter remote handling, it is estimated that these components will face gamma radiation up to 300 Gy/h (in-vessel) and a total dose of 1 MGy. The radiation-hardened sensor instrumentation link presented here, consists

  8. Effects of gamma radiation on hard dental tissues of albino rats: investigation by light microscopy.

    Science.gov (United States)

    El-Faramawy, Nabil; Ameen, Reham; El-Haddad, Khaled; El-Zainy, Medhat

    2013-08-01

    The present work aims at studying the effect of gamma radiation on the hard dental tissues. Eighty adult male albino rats with weights of about 250 g were used. The rats were irradiated at 0.2, 0.5, 1.0, 2.0, 4.0 and 6.0 Gy whole-body gamma doses. The effects on hard dental tissue samples were investigated after 48 h in histological and ground sections using light microscopy. Areas of acid phosphatase activity were detected using tartrate-resistant acid phosphatase (TRAP) stains. Observation of histological sections revealed disturbance in predentin thickness and odontoblastic layer as the irradiation dose increased. In cementum, widened cementocytes lacunae were occasionally detected even with low irradiated doses. On the other hand, relatively homogenous enamel was detected with darkened areas in enamel surface at doses over than 0.5 Gy. TRAP-positive cells were detected on the surface of the dentin of irradiated groups as well as cementum surface. Minimal detectable changes were observed in ground sections.

  9. Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders

    CERN Multimedia

    Joram, C; Gregor, I; Dierlamm, A H; Wilson, F F; Sloan, T; Tuboltsev, Y V; Marone, M; Artuso, M; Cindro, V; Bruzzi, M; Bhardwaj, A; Bohm, J; Mikestikova, M; Walz, M; Breindl, M A; Ruzin, A; Marunko, S; Guskov, J; Haerkoenen, J J; Pospisil, S; Fadeyev, V; Makarenko, L; Kaminski, P; Zelazko, J; Pintilie, L; Radu, R; Nistor, S V; Ullan comes, M; Storasta, J V; Gaubas, E; Lacasta llacer, C; Kilminster, B J; Garutti, E; Buhmann, P; Khomenkov, V; Poehlsen, J A; Fernandez garcia, M; Buttar, C; Eklund, L M; Munoz sanchez, F J; Eremin, V; Aleev, A; Modi, B; Sicho, P; Gisen, A J; Nikolopoulos, K; Van beuzekom, M G; Kozlowski, R; Lozano fantoba, M; Leroy, C; Pernegger, H; Del burgo, R; Vila alvarez, I; Palomo pinto, F R; Lounis, A; Eremin, I; Fadeeva, N; Rogozhkin, S; Shivpuri, R K; Arsenovich, T; Ott, J; Abt, M; Loenker, J; Savic, N; Monaco, V; Visser, J; Lynn, D; Horazdovsky, T; Solar, M; Dervan, P J; Meng, L; Spencer, E N; Kazuchits, N; Brzozowski, A; Kozubal, M; Nistor, L C; Marti i garcia, S; Gomez camacho, J J; Fretwurst, E; Hoenniger, F; Schwandt, J; Hartmann, F; Marchiori, G; Maneuski, D; De capua, S; Williams, M R J; Mandic, I; Gadda, A; Preiss, J; Macchiolo, A; Nisius, R; Grinstein, S; Gonella, L; Wennloef, H L O; Slavicek, T; Masek, P; Casse, G; Flores, D; Tuuva, T; Jimenez ramos, M D C; Charron, S; Rubinskiy, I; Jansen, H; Eichhorn, T V; Matysek, M; Andersson-lindstroem, G; Donegani, E; Bomben, M; Oshea, V; Muenstermann, D; Holmkvist, C W; Oh, A; Lopez paz, I; Verbitskaya, E; Mitina, D; Grigoriev, E; Zaluzhnyy, A; Mikuz, M; Kramberger, G; Scaringella, M; Ranjeet, R; Jain, A; Luukka, P R; Tuominen, E M; Allport, P P; Cartiglia, N; Brigljevic, V; Kohout, Z; Quirion, D; Lauer, K; Collins, P; Gallrapp, C; Rohe, T V; Chauveau, J; Villani, E G; Fox, H; Parkes, C J; Nikitin, A; Spiegel, L G; Creanza, D M; Menichelli, D; Mcduff, H; Carna, M; Weers, M; Weigell, P; Bortoletto, D; Staiano, A; Bellan, R; Szumlak, T; Sopko, V; Pawlowski, M; Pintilie, I; Pellegrini, G; Rafi tatjer, J M; Moll, M; Eckstein, D; Klanner, R; Gomez, G; Gersabeck, M; Cobbledick, J L; Shepelev, A; Golubev, A; Apresyan, A; Lipton, R J; Borgia, A; Zavrtanik, M; Manna, N; Ranjan, K; Chhabra, S; Beyer, J; Korolkov, I; Heintz, U; Sadrozinski, H; Seiden, A; Surma, B; Esteban, S; Kazukauskas, V; Kalendra, V; Mekys, A; Nachman, B P; Tackmann, K; Steinbrueck, G; Pohlsen, T; Calderini, G; Svihra, P; Murray, D; Bolla, G; Zontar, D; Focardi, E; Seidel, S C; Winkler, A D; Altenheiner, S; Parzefall, U; Moser, H; Sopko, B; Buckland, M D; Vaitkus, J V; Ortlepp, T

    2002-01-01

    The requirements at the Large Hadron Collider (LHC) at CERN have pushed the present day silicon tracking detectors to the very edge of the current technology. Future very high luminosity colliders or a possible upgrade scenario of the LHC to a luminosity of 10$^{35}$ cm$^{-2}$s$^{-1}$ will require semiconductor detectors with substantially improved properties. Considering the expected total fluences of fast hadrons above 10$^{16}$ cm$^{-2}$ and a possible reduced bunch-crossing interval of $\\approx$10 ns, the detector must be ultra radiation hard, provide a fast and efficient charge collection and be as thin as possible.\\\\ We propose a research and development program to provide a detector technology, which is able to operate safely and efficiently in such an environment. Within this project we will optimize existing methods and evaluate new ways to engineer the silicon bulk material, the detector structure and the detector operational conditions. Furthermore, possibilities to use semiconductor materials othe...

  10. A radiation hard dipole magnet coils using aluminum clad copper conductors

    International Nuclear Information System (INIS)

    Leonhardt, W.J.

    1989-01-01

    A C-type septum dipole magnet is located 600 mm downstream of the primary target in an external beam line of the AGS. Conventional use of fiber glass/epoxy electrical insulation for the magnet coils results in their failure after a relatively short running period, therefore a radiation hard insulation system is required. This is accomplished by replacing the existing copper conductor with a copper conductor having a thin aluminum skin which is anodized to provide the electrical insulation. Since the copper supports a current density of 59 A/mm 2 , no reduction in cross sectional area can be tolerated. Design considerations, manufacturing techniques, and operating experience of a prototype dipole is presented. 3 refs., 4 figs

  11. Development, optimisation and characterisation of a radiation hard mixed-signal readout chip for LHCb

    Energy Technology Data Exchange (ETDEWEB)

    Loechner, S.

    2006-07-26

    The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4us. The 128 analogue channels are multiplexed and transmitted off chip in 900ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU) test were performed. A long-time measurement with a silicon strip detector was also part of this work as well as the development and test of a first mass production test setup. The Beetle chip showed no functional failure and only slight degradation in the analogue performance under irradiation of up to 130Mrad total dose. The Beetle chip fulfils all requirements of the vertex detector (VELO), the trigger tracker (TT) and the inner tracker (IT) and is ready for the start of LHCb end of 2007. (orig.)

  12. Development, optimisation and characterisation of a radiation hard mixed-signal readout chip for LHCb

    International Nuclear Information System (INIS)

    Loechner, S.

    2006-01-01

    The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4us. The 128 analogue channels are multiplexed and transmitted off chip in 900ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU) test were performed. A long-time measurement with a silicon strip detector was also part of this work as well as the development and test of a first mass production test setup. The Beetle chip showed no functional failure and only slight degradation in the analogue performance under irradiation of up to 130Mrad total dose. The Beetle chip fulfils all requirements of the vertex detector (VELO), the trigger tracker (TT) and the inner tracker (IT) and is ready for the start of LHCb end of 2007. (orig.)

  13. Radiation hardness and precision timing study of silicon detectors for the CMS High Granularity Calorimeter (HGC)

    Energy Technology Data Exchange (ETDEWEB)

    Currás, Esteban, E-mail: ecurrasr@cern.ch [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Fernández, Marcos [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Gallrapp, Christian [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Gray, Lindsey [Fermilab, Wilson Street and Kirk Road, Batavia, IL 60510-5011, Illinois (United States); Mannelli, Marcello [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Meridiani, Paolo [Istituto Nazionale Di Fisica Nucleare – Sezione di Roma, Piazzale Aldo Moro, 2, 00185 Roma (Italy); Moll, Michael [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Nourbakhsh, Shervin [University of Minnesota, Minneapolis, MN 55455 (United States); Scharf, Christian [Hamburg University, Notkestraße 85, 22607 Hamburg (Germany); Silva, Pedro [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Steinbrueck, Georg [Hamburg University, Notkestraße 85, 22607 Hamburg (Germany); Fatis, Tommaso Tabarelli de [Istituto Nazionale di Fisica Nucleare – Sezione di Milano-Bicocca Piazza della Scienza 3, 20126 Milano (Italy); Vila, Iván [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain)

    2017-02-11

    The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb{sup −1} per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ∼1.0 cm{sup 2} and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb{sup −1}, the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 10{sup 16} neq/cm{sup 2}. A radiation tolerance study after neutron irradiation of 300, 200, and 100 μm n-on-p and p-on-n silicon pads irradiated to fluences up to 1.6×10{sup 16} neq/cm{sup 2} is presented. The properties of these diodes studied before and after irradiation were leakage current, capacitance, charge collection efficiency, annealing effects and timing capability. The results of these measurements validate these sensors as candidates for the HGC system.

  14. Vulnerability of OFDR-based distributed sensors to radiations

    Energy Technology Data Exchange (ETDEWEB)

    Rizzolo, S. [Laboratoire Hubert Curien, Universite Jean Monnet, CNRS UMR 5516, 18 Rue Benoit Lauras, 42000, Saint-Etienne (France); Dipartimento di Fisica e Chimica, Universita di Palermo, Viale delle Scienze Parco d' Orleans II, Ed. 17, 90128 Palermo (Italy); Areva Centre Technique, Boulevard de l' Industrie, 71200, Le Creusot (France); Boukenter, A.; Marin, E.; Ouerdane, Y.; Girard, S. [Laboratoire Hubert Curien, Universite Jean Monnet, CNRS UMR 5516, 18 Rue Benoit Lauras, 42000, Saint-Etienne (France); Cannas, M. [Dipartimento di Fisica e Chimica, Universita di Palermo, Viale delle Scienze Parco d' Orleans II, Ed. 17, 90128 Palermo (Italy); Perisse, J. [Areva NP, 10 Rue Juliette Recamier, 69006, Lyon (France); Bauer, S. [Areva Centre Technique, Boulevard de l' Industrie, 71200, Le Creusot (France); Mace, J.R. [Areva NP, 1, Place Jean-Millier 92084, Paris-La Defense (France)

    2015-07-01

    overcome the issues identified for next generation of NPPs. Such integration will only be possible if the OFDR based systems are able to resist to the constraints associated with industrial environments, one of the most constraining being the presence of high level of radiations. In this work, we carry out a systematic study to highlight the OFDR interest and sensitivity to probe the optical samples at high irradiation dose levels. The responses of five optical fibers types, from radiation hardened to radiation sensitive ones, are investigated to explore the influence of both the material compositions and the γ-irradiation on the ODFR sensors. Using these samples, we should highlight the influence of the core dopant concentration on the observed radiation-induced changes as well as the difference observed when the cladding is either radiation resistant or radiation sensitive. Our samples were irradiated using a {sup 60}Co source facility reaching total doses varying from 1 MGy up to a maximum of 10 MGy. All the measurements are performed after diverse months from irradiation to study permanents effects induced from these high γ-rays doses. We'll present at the conference all the experimental results acquired and use them to estimate the potential of OFDR-based systems for operation in radiation environments. (authors)

  15. Radiation Resistance Test of Wireless Sensor Node and the Radiation Shielding Calculation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Liqan; Sur, Bhaskar [Atomic Energy of Canada Limited, Ontario (Canada); Wang, Quan [University of Western Ontario, Ontario (Canada); Deng, Changjian [The University of Electronic Science and Technology, Chengdu (China); Chen, Dongyi; Jiang, Jin [Applied Physics Branch, Ontario (Korea, Republic of)

    2014-08-15

    A wireless sensor network (WSN) is being developed for nuclear power plants. Amongst others, ionizing radiation resistance is one essential requirement for WSN to be successful. This paper documents the work done in Chalk River Laboratories of Atomic Energy of Canada Limited (AECL) to test the resistance to neutron and gamma radiation of some WSN nodes. The recorded dose limit that the nodes can withstand before being damaged by the radiation is compared with the radiation environment inside a typical CANDU (CANada Deuterium Uranium) power plant reactor building. Shielding effects of polyethylene, cadmium and lead to neutron and gamma radiations are also analyzed using MCNP simulation. The shielding calculation can be a reference for the node case design when high dose rate or accidental condition (like Fukushima) is to be considered.

  16. A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

    International Nuclear Information System (INIS)

    Camargo, Fábio de; Gonçalves, Josemary A.C.; Bueno, Carmen C.

    2017-01-01

    In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a 60 Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with 60 Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the FZ and DOFZ responses evidenced that the latter was slightly superior to the first. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications. (author)

  17. A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

    Energy Technology Data Exchange (ETDEWEB)

    Camargo, Fábio de [Amazônia Azul Tecnologias de Defesa S.A. (AMAZUL), São Paulo, SP (Brazil); Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: dcamargo@gmail.com, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN-CNEN/SP), Sao Paulo, SP (Brazil)

    2017-07-01

    In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a {sup 60}Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with {sup 60}Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the FZ and DOFZ responses evidenced that the latter was slightly superior to the first. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications. (author)

  18. Ultrasensitive Wearable Soft Strain Sensors of Conductive, Self-healing, and Elastic Hydrogels with Synergistic "Soft and Hard" Hybrid Networks.

    Science.gov (United States)

    Liu, Yan-Jun; Cao, Wen-Tao; Ma, Ming-Guo; Wan, Pengbo

    2017-08-02

    Robust, stretchable, and strain-sensitive hydrogels have recently attracted immense research interest because of their potential application in wearable strain sensors. The integration of the synergistic characteristics of decent mechanical properties, reliable self-healing capability, and high sensing sensitivity for fabricating conductive, elastic, self-healing, and strain-sensitive hydrogels is still a great challenge. Inspired by the mechanically excellent and self-healing biological soft tissues with hierarchical network structures, herein, functional network hydrogels are fabricated by the interconnection between a "soft" homogeneous polymer network and a "hard" dynamic ferric (Fe 3+ ) cross-linked cellulose nanocrystals (CNCs-Fe 3+ ) network. Under stress, the dynamic CNCs-Fe 3+ coordination bonds act as sacrificial bonds to efficiently dissipate energy, while the homogeneous polymer network leads to a smooth stress-transfer, which enables the hydrogels to achieve unusual mechanical properties, such as excellent mechanical strength, robust toughness, and stretchability, as well as good self-recovery property. The hydrogels demonstrate autonomously self-healing capability in only 5 min without the need of any stimuli or healing agents, ascribing to the reorganization of CNCs and Fe 3+ via ionic coordination. Furthermore, the resulted hydrogels display tunable electromechanical behavior with sensitive, stable, and repeatable variations in resistance upon mechanical deformations. Based on the tunable electromechanical behavior, the hydrogels can act as a wearable strain sensor to monitor finger joint motions, breathing, and even the slight blood pulse. This strategy of building synergistic "soft and hard" structures is successful to integrate the decent mechanical properties, reliable self-healing capability, and high sensing sensitivity together for assembling a high-performance, flexible, and wearable strain sensor.

  19. Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Nachman, Benjamin Philip; The ATLAS collaboration

    2017-01-01

    Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of $10^{15}$ 1 MeV $n_\\mathrm{eq}/\\mathrm{cm}^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This talk presents a digitization model that includes radiation damage effects to the ATLAS Pixel sensors for the first time. After a thorough description of the setup, predictions for basic Pixel cluster properties are presented alongside first validation studies with Run 2 collision data.

  20. Chalcogenide Glass Radiation Sensor; Materials Development, Design and Device Testing

    Energy Technology Data Exchange (ETDEWEB)

    Mitkova, Maria; Butt, Darryl; Kozicki, Michael; Barnaby, Hugo

    2013-04-30

    studied the effect of x-rays and γ-rays, on thin film chalcogenide glasses and applied them in conjunction with film incorporating a silver source in a new type of radiation sensor for which we have an US patent application [3]. In this report, we give data about our studies regarding our designed radiation sensor along with the testing and performance at various radiation doses. These studies have been preceded by materials characterization research related to the compositional and structural characteristics of the active materials used in the radiation sensor design. During the work on the project, we collected a large volume of material since every experiment was repeated many times to verify the results. We conducted a comprehensive material research, analysis and discussion with the aim to understand the nature of the occurring effects, design different structures to harness these effects, generated models to aid in the understanding the effects, built different device structures and collected data to quantify device performance. These various aspects of our investigation have been detailed in previous quarterly reports. In this report, we present our main results and emphasize on the results pertaining to the core project goals materials development, sensor design and testing and with an emphasis on classifying the appropriate material and design for the optimal application. The report has three main parts: (i) Presentation of the main data; (ii) Bulleted summary of the most important results; (iii) List of the patent, journal publications, conference proceedings and conferences participation, occurring as a result of working on the project.

  1. Radiation hardness and precision timing study of Silicon detectors for the CMS High Granularity Calorimeter (HGC)

    CERN Document Server

    Curras, E; Gallrapp, C; Gray, L; Mannelli, M; Meridiani, P; Moll, M; Nourbakhsh, S; Scharf, C; Silva, P; Steinbrueck, G; Tabarelli de Fatis, T; Vila, I

    2017-01-01

    The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb^−1 per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ∼1.0 cm^2 and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb^−1, the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 10^16 neq/cm^2. A radiation tolerance study after neutron irradiation of 300, 200, and 100 μ...

  2. Low-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Electronics

    Science.gov (United States)

    McMorrow, Julian

    memory (SRAM) cells, an accomplishment that illustrates the technological relevance of this work by implementing a highly utilized component of modern day computing. Next, these SRAM devices demonstrate functionality as true random number generators (TRNGs), which are critical components in cryptography and encryption. The randomness of these SWCNT TRNGs is verified by a suite of statistical tests. This achievement has implications for securing data and communication in future solution-processed, large-area, flexible electronics. The unprecedented integration achieved by the underlying SWCNT doping and encapsulation motivates the study of this technology in a radiation environment. Doing so results in an understanding of the fundamental charge trapping mechanisms responsible for the radiation response in this system. The integrated nature of these devices enables, for the first time, the observation of system-level effects in a SWCNT integrated circuit technology. This technology is found to be total ionizing dose-hard, a promising result for the adoption of SWCNTs in future space-bound applications. Compared to SWCNTs, the field of MoS2 electronics is relatively nascent. As a result, studies of radiation effects in MoS2 devices focus on the fundamental mechanisms at play in the materials system. Here, we reveal the critical role of atmospheric adsorbates in the radiation effects of MoS2 transistors by measuring their response to vacuum ultraviolet radiation. These results highlight the importance of controlling the atmosphere of MoS2 devices during irradiation. Furthermore, we make recommendations for radiation-hard MoS2-based devices in the future as the technology continues to mature. One such recommendation is the incorporation of specialized dielectrics with proven radiation hardness. To this end, we address the materials integration challenge of incorporating SAND gate dielectrics on arbitrary substrates. We explore a novel approach for preparing metal substrates

  3. Time-resolved hard x-ray studies using third-generation synchrotron radiation sources (abstract)

    International Nuclear Information System (INIS)

    Mills, D.M.

    1992-01-01

    The third-generation, high-brilliance, synchrotron radiation sources currently under construction will usher in a new era of x-ray research in the physical, chemical, and biological sciences. One of the most exciting areas of experimentation will be the extension of static x-ray scattering and diffraction techniques to the study of transient or time-evolving systems. The high repetition rate, short-pulse duration, high-brilliance, variable spectral bandwidth, and large particle beam energies of these sources make them ideal for hard x-ray, time-resolved studies. The primary focus of this presentation will be on the novel instrumentation required for time-resolved studies such as optics which can increase the flux on the sample or disperse the x-ray beam, detectors and electronics for parallel data collection, and methods for altering the natural time structure of the radiation. This work is supported by the U.S. Department of Energy, BES-Materials Science, under Contract No. W-31-109-ENG-38

  4. Decision feedback equalization for radiation hard data link at 5 Gbps

    International Nuclear Information System (INIS)

    Wallängen, V.; Garcia-Sciveres, M.

    2017-01-01

    The increased particle collision rate following the upgrade of the Large Hadron Collider (LHC) to an increased luminosity requires an increased readout data speed, especially for the ATLAS pixel detector, located closest to the particle interaction point. For this reason, during the Phase-II upgrade of the ATLAS experiment the output data speed of the pixel front-end chips will be increased from 160 Mbps to 5 Gbps. The increased radiation levels will require a radiation hard data transmission link to be designed to carry this data from the pixel front-end to the off-detector system where it will undergo optical conversion. We propose a receiver utilizing the concept of Decision Feedback Equalization (DFE) to be used in this link, where the number of filter taps can be determined from simulations using S-parameter data from measurements of various customized cable prototypes under characterization as candidates to function as transmission medium between the on-chip data driver and the receiver of the link. A dedicated framework has been set up in Matlab to analyze the S-parameter characteristics for the various cable prototypes and investigate the possibilities for signal recovery and maintained signal integrity using DFE, as well as pre-emphasis and different encoding schemes. The simulation results indicate that DFE could be an excellent choice for expanding the system bandwidth to reach required data speeds with minimal signal distortion.

  5. Non-stoichiometry defects and radiation hardness of lead tungstate crystals PbWO sub 4

    CERN Document Server

    Devitsin, E G; Potashov, S Yu; Terkulov, A R; Nefedov, V A; Polyansky, E V; Zadneprovski, B I; Kjellberg, P; Korbel, V

    2002-01-01

    It has been stated many times that the formation of radiation infringements in PbWO sub 4 is to a big extent stipulated by the non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of the non-stoichiometry defects and their effect on the radiation hardness of PbWO sub 4 , the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation ( sup 1 sup 3 sup 7 Cs source). In the optical transmission measurements along with traditional techniques a method 'in situ' was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO sub 4 melt has found PbWO sub 4 phase in their content as well as compounds rich in lead PbO, Pb sub 2 WO sub 5 with overall ratio Pb/W (3....

  6. Non-stoichiometry Defects and Radiation Hardness of Lead Tungstate Crystals PbWO4

    CERN Document Server

    Devitsin, E G; Kozlov, V A; Nefedov, L; Polyansky, E V; Potashov, S Yu; Terkulov, A R; Zadneprovski, B I

    2001-01-01

    It has been stated many times that the formation of radiation infringements in PbWO4 is to big extent stipulated by non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of non-stoichiometry defects and their effect on the radiation hardness of PbWO4 the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation (137Cs source). In the optical transmission measurements along with traditional techniques a method "in situ" was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO4 melt has found PbWO4 phase in their content as well as compounds rich in lead, PbO, Pb2WO5, with overall ratio Pb/W = 3.2. Correspondingly the lack of lead and variations in th...

  7. Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes

    CERN Document Server

    Boscardin, Maurizio; Bruzzi, Mara; Candelori, Andrea; Focardi, Ettore; Khomenkov, Volodymyr P; Piemonte, Claudio; Ronchin, S; Tosi, C; Zorzi, N

    2005-01-01

    Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution, and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed PIN diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer backside. Diodes of different shapes and sizes have been fabricated on 50- mu m and 100- mu m thick membranes and tested, showing a low leakage current (of 300 nA/cm/sup 3/) and a very low depletion voltage (in the order of 1 V for the 50 mu m membrane) before irradiation. Radiation damage tests have been performed with 58 MeV lithium (Li) ions up to the fluence of 10/sup 14/ Li/cm/sup 2/ in order to determine the depletion voltage and leakage current density increase after irradiation. Charge collection efficiency tests carried out with a beta /...

  8. Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

    Science.gov (United States)

    Cattaneo, P. W.; Cervi, T.; Menegolli, A.; Oddone, M.; Prata, M.; Prata, M. C.; Rossella, M.

    2017-07-01

    Radiation hardness is an important requirement for solid state readout devices operating in high radiation environments common in particle physics experiments. The MEG II experiment, at PSI, Switzerland, investigates the forbidden decay μ+ → e+ γ. Exploiting the most intense muon beam of the world. A significant flux of non-thermal neutrons (kinetic energy Ek>= 0.5 MeV) is present in the experimental hall produced along the beam-line and in the hall itself. We present the effects of neutron fluxes comparable to the MEG II expected doses on several Silicon Photomultiplier (SiPMs). The tested models are: AdvanSiD ASD-NUV3S-P50 (used in MEG II experiment), AdvanSiD ASD-NUV3S-P40, AdvanSiD ASD-RGB3S-P40, Hamamatsu and Excelitas C30742-33-050-X. The neutron source is the thermal Sub-critical Multiplication complex (SM1) moderated with water, located at the University of Pavia (Italy). We report the change of SiPMs most important electric parameters: dark current, dark pulse frequency, gain, direct bias resistance, as a function of the integrated neutron fluency.

  9. Radiation sensors based on GaN microwires

    Science.gov (United States)

    Verheij, D.; Peres, M.; Cardoso, S.; Alves, L. C.; Alves, E.; Durand, C.; Eymery, J.; Lorenz, K.

    2018-05-01

    GaN microwires were shown to possess promising characteristics as building blocks for radiation resistant particle detectors. They were grown by metal organic vapour phase epitaxy with diameters between 1 and 2 μm and lengths around 20 μm. Devices were fabricated by depositing gold contacts at the extremities of the wires using photolithography. The response of these single wire radiation sensors was then studied under irradiation with 2 MeV protons. Severe degradation of the majority of devices only sets in for fluences above protons cm‑2 revealing good radiation resistance. During proton irradiation, a clear albeit small current gain was observed with a corresponding decay time below 1 s. Photoconductivity measurements upon irradiation with UV light were carried out before and after the proton irradiation. Despite a relatively low gain, attributed to significant dark currents caused by a high dopant concentration, fast response times of a few seconds were achieved comparable to state-of-the-art GaN nanowire photodetectors. Irradiation and subsequent annealing resulted in an overall improvement of the devices regarding their response to UV radiation. The photocurrent gain increased compared to the values that were obtained prior to the irradiation, without compromising the decay times. The results indicate the possibility of using GaN microwires not only as UV detectors, but also as particle detectors.

  10. Development of cryogenic Si detectors by CERN RD39 Collaboration for ultra radiation hardness in SLHC environment

    CERN Document Server

    Li, Z; Anbinderis, P; Anbinderis, T; D’Ambrosio, N; de Boer, Wim; Borchi, E; Borer, K; Bruzzi, M; Buontempo, S; Chen, W; Cindro, V; Dierlamm, A; Eremin, V; Gaubas, E; Gorbatenko, V; Grigoriev, E; Hauler, F; Heijne, Erik H M; Heising, S; Hempel, O; Herzog, R; Härkönen, J; Ilyashenko, I; Janos, S; Jungermann, L; Kalesinskas, V; Kapturauskas, J; Laiho, R; Luukka, P; Mandic, I; De Masi, R; Menichelli, D; Mikuz, M; Militaru, O; Niinikosky, T O; O’Shea, V; Pagano, S; Paul, S; Piotrzkowski, K; Pretzl, K; Rato-Mendes, P; Rouby, X; Ruggiero, G; Smith, K; Sonderegger, P; Sousa, P; Tuominen, E; Tuovinen, E; Verbitskaya, E; Vaitkus, J; Wobst, E; Zavrtanik, M

    2007-01-01

    There are two key approaches in our CERN RD 39 Collaboration efforts to obtain ultra-radiation-hard Si detectors: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (150 K), and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the liquid nitrogen (LN2) temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures.

  11. Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

    Science.gov (United States)

    Lauenstein, Jean-Marie

    2011-01-01

    Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR

  12. Radiation-hard ASICS for sLHC optical data transmission

    International Nuclear Information System (INIS)

    Gan, K.K.

    2009-01-01

    High-speed data transmission in a high radiation environment poses an immense challenge in the detector design. We investigate the feasibility of using optical links for the silicon trackers of the ATLAS experiment for the planned upgrade of the LHC. The planned upgrade with ten times higher collision rate will produce a similar increase in the radiation. One possibility for the optical transmission is to use VCSEL arrays operating at 850 nm to transmit optical signals while using PIN arrays to convert the optical signals into electrical signals. We have designed a prototype chip containing building blocks for future SLHC optical links using a 130 nm CMOS 8RF process. The chip contains four main blocks; a VCSEL driver optimized for operation at 640 Mb/s, a VCSEL driver optimized for 3.2 Gb/s, a PIN receiver with a clock/data recovery circuit for operation at 40, 160, and 320 Mb/s, and two clock multipliers designed to operate at 640 Mb/s. The clock multiplier is designed to produce the high speed clock to serialize the data for transmission. All circuitry was designed following test results and guidelines from CERN on radiation tolerant design for the process. We have irradiated the chips with 24 GeV protons at CERN. For the VDC, the duty cycle of the output signal and the current consumption of the LVDS receiver remained constant during the irradiation. However, we observed significant decreases in the current consumption of the VCSEL driver circuit and the output drive current. This indicated that the think oxide layout used in the VCSEL driver portion of the chip might not be as radiation-hard and the circuit had been redesigned to minimize this sensitivity. For the PIN receiver, we found that the radiation produced no significant degradation, including the single event upset rate. The upset rate decreased with larger PIN current and was higher for a chip coupled to a PIN diode as expected. For the clock multipliers, we observed that the clocks of some chips

  13. Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics

    Energy Technology Data Exchange (ETDEWEB)

    Sun, K.

    2011-05-04

    This slide show presents: space exploration applications; high energy density physics applications; UV LED and photodiode radiation hardness; UV LED and photodiode space qualification; UV LED AC charge management; and UV LED satellite payload instruments. A UV LED satellite will be launched 2nd half 2012.

  14. Improvement of optical properties and radiation hardness of NaBi(WO sub 4) sub 2 Cherenkov crystals

    CERN Document Server

    Zadneprovski, B I; Polyansky, E V; Devitsin, E G; Kozlov, V A; Potashov, S Yu; Terkulov, A R

    2002-01-01

    On the basis of the data on melt evaporation while growing NaBi(WO sub 4) sub 2 Cherenkov crystals, the formation of nonstoichiometry and most probable types of dot defects of the crystals have been considered. The influence of melt nonstoichiometry and doping with Sc on optical transmission and radiation hardness of the crystals has been experimentally investigated. The surplus of WO sub 3 has been established to increase optical transmission and radiation hardness and lack of Bi sub 2 O sub 3 in the melt to reduce radiation hardness. Sc doping is shifting the absorption edge to UV region by 30-35 nm and is increasing radiation hardness of the crystals about three-fold. Analytical estimations give the increase of the number of Cherenkov photons by a factor of 1.3, which leads to an improvement of the energy resolution of a calorimeter based on NaBi(WO sub 4) sub 2 :Sc crystals compared with undoped NaBi(WO sub 4) sub 2 of approximately 15%.

  15. Fluid dynamic analysis and experimental study of a low radiation error temperature sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jie, E-mail: yangjie396768@163.com [Key Laboratory for Aerosol-Cloud-Precipitation of China Meteorological Administration, Nanjing 210044 (China); School of Atmospheric Physics, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Liu, Qingquan, E-mail: andyucd@163.com [Jiangsu Key Laboratory of Meteorological Observation and Information Processing, Nanjing 210044 (China); Jiangsu Collaborative Innovation Center on Atmospheric Environment and Equipment Technology, Nanjing 210044 (China); Dai, Wei, E-mail: daiweiilove@163.com [Key Laboratory for Aerosol-Cloud-Precipitation of China Meteorological Administration, Nanjing 210044 (China); School of Atmospheric Physics, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Ding, Renhui, E-mail: drhabcd@sina.com [Jiangsu Meteorological Observation Center, Nanjing 210008 (China)

    2017-01-30

    To improve the air temperature observation accuracy, a low radiation error temperature sensor is proposed. A Computational Fluid Dynamics (CFD) method is implemented to obtain radiation errors under various environmental conditions. The low radiation error temperature sensor, a naturally ventilated radiation shield, a thermometer screen and an aspirated temperature measurement platform are characterized in the same environment to conduct the intercomparison. The aspirated platform served as an air temperature reference. The mean radiation errors of the naturally ventilated radiation shield and the thermometer screen are 0.57 °C and 0.32 °C, respectively. In contrast, the mean radiation error of the low radiation error temperature sensor is 0.05 °C. The low radiation error temperature sensor proposed in this research may be helpful to provide a relatively accurate air temperature measurement result. - Highlights: • A CFD method is applied to obtain a quantitative solution of radiation error. • A temperature sensor is proposed to minimize radiation error. • The radiation error of the temperature sensor is on the order of 0.05 °C.

  16. Investigation of DEPFET as vertex detector at ILC. Intrinsic properties, radiation hardness and alternative readout schemes

    International Nuclear Information System (INIS)

    Rummel, Stefan

    2009-01-01

    The International Linear Collider (ILC) is supposed to be the next generation lepton collider. The detectors at ILC are intended to be precision instruments improving the performance in impact parameter (IP), momentum and energy resolution significantly compared to previous detectors at lepton colliders. To achieve this goal it is necessary to develop new detector technologies or pushing existing technologies to their technological edges. Regarding the Vertex detector (VTX) this implies challenges in resolution, material budget, power consumption and readout speed. A promising technology for the Vertex detector is the Depleted Field Effect Transistor (DEPFET). The DEPFET is a semiconductor device with in-pixel ampli cation integrated on a fully depleted bulk. This allows building detectors with intrinsically high SNR due to the large sensitive volume and the small input capacitance at the rst ampli er. To reach the ambitious performance goals it is important to understand its various features: clear performance, internal amplification, noise and radiation hardness. The intrinsic noise is analyzed, showing that the contribution of the DEPFET is below 50 e - at the required speed. Moreover it is possible to show that the internal ampli cation could be further improved to more than 1nA/e - using the standard DEPFET technology. The clear performance is investigated on matrix level utilizing a dedicated setup for single pixel testing which allows direct insight into the DEPFET operation, without the complexity of the full readout system. It is possible to show that a full clear could be achieved with a voltage pulse of 10 V. Furthermore a novel clear concept - the capacitive coupled clear gate - is demonstrated. The radiation hardness is studied with respect to the system performance utilizing various irradiations with ionizing and non ionizing particles. The impact on the bulk as well as the interface damage is investigated. Up to now the readout is performed with

  17. Investigation of DEPFET as vertex detector at ILC. Intrinsic properties, radiation hardness and alternative readout schemes

    Energy Technology Data Exchange (ETDEWEB)

    Rummel, Stefan

    2009-07-20

    The International Linear Collider (ILC) is supposed to be the next generation lepton collider. The detectors at ILC are intended to be precision instruments improving the performance in impact parameter (IP), momentum and energy resolution significantly compared to previous detectors at lepton colliders. To achieve this goal it is necessary to develop new detector technologies or pushing existing technologies to their technological edges. Regarding the Vertex detector (VTX) this implies challenges in resolution, material budget, power consumption and readout speed. A promising technology for the Vertex detector is the Depleted Field Effect Transistor (DEPFET). The DEPFET is a semiconductor device with in-pixel ampli cation integrated on a fully depleted bulk. This allows building detectors with intrinsically high SNR due to the large sensitive volume and the small input capacitance at the rst ampli er. To reach the ambitious performance goals it is important to understand its various features: clear performance, internal amplification, noise and radiation hardness. The intrinsic noise is analyzed, showing that the contribution of the DEPFET is below 50 e{sup -} at the required speed. Moreover it is possible to show that the internal ampli cation could be further improved to more than 1nA/e{sup -} using the standard DEPFET technology. The clear performance is investigated on matrix level utilizing a dedicated setup for single pixel testing which allows direct insight into the DEPFET operation, without the complexity of the full readout system. It is possible to show that a full clear could be achieved with a voltage pulse of 10 V. Furthermore a novel clear concept - the capacitive coupled clear gate - is demonstrated. The radiation hardness is studied with respect to the system performance utilizing various irradiations with ionizing and non ionizing particles. The impact on the bulk as well as the interface damage is investigated. Up to now the readout is performed

  18. Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Ducourthial, Audrey; The ATLAS collaboration

    2017-01-01

    Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15} n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside...

  19. Modeling radiation damage to pixel sensors in the ATLAS detector

    CERN Document Server

    Ducourthial, Audrey; The ATLAS collaboration

    2017-01-01

    Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15}n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside ...

  20. Modeling radiation damage to pixel sensors in the ATLAS detector

    Science.gov (United States)

    Ducourthial, A.

    2018-03-01

    Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC) . As the closest detector component to the interaction point, these detectors will be subject to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC) [1], the innermost layers will receive a fluence in excess of 1015 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is essential in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects on the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside early studies with LHC Run 2 proton-proton collision data.

  1. Multi-dimensional fiber-optic radiation sensor for ocular proton therapy dosimetry

    International Nuclear Information System (INIS)

    Jang, K.W.; Yoo, W.J.; Moon, J.; Han, K.T.; Park, B.G.; Shin, D.; Park, S-Y.; Lee, B.

    2012-01-01

    In this study, we fabricated a multi-dimensional fiber-optic radiation sensor, which consists of organic scintillators, plastic optical fibers and a water phantom with a polymethyl methacrylate structure for the ocular proton therapy dosimetry. For the purpose of sensor characterization, we measured the spread out Bragg-peak of 120 MeV proton beam using a one-dimensional sensor array, which has 30 fiber-optic radiation sensors with a 1.5 mm interval. A uniform region of spread out Bragg-peak using the one-dimensional fiber-optic radiation sensor was obtained from 20 to 25 mm depth of a phantom. In addition, the Bragg-peak of 109 MeV proton beam was measured at the depth of 11.5 mm of a phantom using a two-dimensional sensor array, which has 10×3 sensor array with a 0.5 mm interval.

  2. Characterization of the first double-sided 3D radiation sensors fabricated at FBK on 6-inch silicon wafers

    International Nuclear Information System (INIS)

    Sultan, D.M.S.; Mendicino, R.; Betta, G.-F. Dalla; Boscardin, M.; Ronchin, S.; Zorzi, N.

    2015-01-01

    Following 3D pixel sensor production for the ATLAS Insertable B-Layer, Fondazione Bruno Kessler (FBK) fabrication facility has recently been upgraded to process 6-inch wafers. In 2014, a test batch was fabricated to check for possible issues relevant to this upgrade. While maintaining a double-sided fabrication technology, some process modifications have been investigated. We report here on the technology and the design of this batch, and present selected results from the electrical characterization of sensors and test structures. Notably, the breakdown voltage is shown to exceed 200 V before irradiation, much higher than in earlier productions, demonstrating robustness in terms of radiation hardness for forthcoming productions aimed at High Luminosity LHC upgrades

  3. A Shack-Hartmann Sensor for Single-Shot Multi-Contrast Imaging with Hard X-rays

    Directory of Open Access Journals (Sweden)

    Tomy dos Santos Rolo

    2018-05-01

    Full Text Available An array of compound refractive X-ray lenses (CRL with 20 × 20 lenslets, a focal distance of 20cm and a visibility of 0.93 is presented. It can be used as a Shack-Hartmann sensor for hard X-rays (SHARX for wavefront sensing and permits for true single-shot multi-contrast imaging the dynamics of materials with a spatial resolution in the micrometer range, sensitivity on nanosized structures and temporal resolution on the microsecond scale. The object’s absorption and its induced wavefront shift can be assessed simultaneously together with information from diffraction channels. In contrast to the established Hartmann sensors the SHARX has an increased flux efficiency through focusing of the beam rather than blocking parts of it. We investigated the spatiotemporal behavior of a cavitation bubble induced by laser pulses. Furthermore, we validated the SHARX by measuring refraction angles of a single diamond CRL, where we obtained an angular resolution better than 4 μ rad.

  4. Radiation-hard ASICs for optical data transmission in the first phase of the LHC upgrade

    International Nuclear Information System (INIS)

    Gan, K.K.; Buchholz, P.; Kagan, H.P.; Kass, R.D.; Moore, J.R.; Smith, D.S.; Wiese, A.; Ziolkowskic, M.

    2011-01-01

    We have designed two ASICs for possible applications in the optical links of a new layer of the pixel detector to be install inside the ATLAS Pixel detector for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for a VCSEL and a receiver/decoder to decode the signal received at a PIN diode to extract the data and clock. Both ASICs contain 4 channels for operation with a VCSEL or PIN array. The ASICs were designed using a 130 nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated ASICs and the performance of the ASICs is satisfactory. The receiver/decoder properly decodes the bi-phase marked input stream with low PIN current and the driver can operate a VCSEL up to ∼5 Gb/s. The added functionalities are also successful, including redundancy to bypass a broken VCSEL or PIN channel, individual control of VCSEL current, and power-on reset circuit to set all VCSEL currents to a nominal value.

  5. Radiation-hard ASICs for optical data transmission in the first phase of the LHC upgrade

    International Nuclear Information System (INIS)

    Gan, K K; Kagan, H P; Kass, R D; Moore, J R; Smith, D S; Buchholz, P; Wiese, A; Ziolkowskic, M

    2010-01-01

    We have designed two ASICs for possible applications in the optical links of a new layer of the pixel detector to be install inside the ATLAS Pixel detector for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for the VCSEL and a receiver/decoder to decode the signal received at the PIN diode to extract the data and clock. Both ASICs contain 4 channels for operation with a VCSEL or PIN array. The ASICs were designed using a 130 nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated ASICs and the performance of the ASICs is satisfactory. The receiver/decoder can properly decode the bi-phase marked input stream with low PIN current and the driver can operate a VCSEL up to ∼ 5 Gb/s. The added functionalities are also successful, including redundancy to bypass a broken VCSEL or PIN channel, individual control of VCSEL current, and power-on reset circuit to set all VCSEL currents to a nominal value. The ASICs were irradiated to a dose of 46 Mrad with 24 GeV/c protons. The observed modest degradation is acceptable and the single event upset rate is negligible.

  6. Radiation-hard ASICs for optical data transmission in the first phase of the LHC upgrade

    CERN Document Server

    Gan, K K; Kagan, H P; Kass, R D; Moore, J R; Smith, D S; Wiese, A; Ziolkowskic, M; 10.1088/1748-0221/5/12/C12006

    2010-01-01

    We have designed two ASICs for possible applications in the optical links of a new layer of the pixel detector to be install inside the ATLAS Pixel detector for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for the VCSEL and a receiver/decoder to decode the signal received at the PIN diode to extract the data and clock. Both ASICs contain 4 channels for operation with a VCSEL or PIN array. The ASICs were designed using a 130 nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated ASICs and the performance of the ASICs is satisfactory. The receiver/decoder can properly decode the bi-phase marked input stream with low PIN current and the driver can operate a VCSEL up to ~ 5 Gb/s. The added functionalities are also successful, including redundancy to bypass a broken VCSEL or PIN channel, individual control of VCSEL current, and power-on reset circuit to set all VCSEL currents to a nominal value. The ASICs were irradiated to a dose of 46 Mrad ...

  7. A study on image quality and exposure dose of hard radiation radiography of the chest

    International Nuclear Information System (INIS)

    Hayashi, Taro; Ishida, Yuji; Maeda, Mika; Sakurai, Tatsuya; Kim, Chung Woon; Hwang, Jong Sun

    1991-01-01

    Experiment was conducted on the image quality and exposure dose following replacement of CaWO 4 system screen BH - III and BX - III which have so far been used for high - voltage hard - radiation quality radiography, with rare earth system screen KO750, combined with high contrast film SRH, while additional filter was altered, Cu 0.8 mm + Al 1.4 mm(HVL : AI 8.8 mm), Cu 1.3 mm + AI 1.0mm(HVL: AI 10.6mm) and Cu 1.8mm + AI 1.5mm(HVL: AI 11.4mm). AS a result, visual evaluation did not detect extreme changes in image quality under the respective condition (HVL : Al 8.8 mm ∼ AI 11.4 mm). It was noted, however, that surface exposure dose declined with an increase in the thickness of the additional filter, as it was 18.9 μGy at HVL Al 8.8 mm, 17.5 μGy at Al 10.6 mm and 15.7 μGy at Al 11.4 mm. Considering the limited rating of X-ray equipment and wear of machinery, however, the range of Cu 1.3 mm ∼ l.8 mm + AI 1.0 mm ∼ 1.5 mm(1/16 VL ∼ 1/32 VL) seemed to be a limit

  8. Development and characterisation of a radiation hard readout chip for the LHCb experiment

    CERN Document Server

    Baumeister, Daniel; Stachel, Johanna

    2003-01-01

    Within this doctoral thesis parts of the radiation hard readout chip Beetle have been developed and characterised, before and after irradiation. The design work included the analogue memory with the corresponding readout amplifier as well as components of the digital control circuitry. An interface compatible with the I2C-standard and the control logic for event readout have been implemented. A scheme has been developed which ensures the robustness of the Beetle chip against Single-Event Upset (SEU). This includes the consistent use of triple-redundant memory devices together with a self-triggered correction in parts of the circuit. The Beetle ASIC is a 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier and a CR-RC pulse shaper. It features an equivalent noise charge of ENC = 497 e− +48.3 e−/pF·Cin. The analogue memory is a switched capacitor array, which provides a latency of max. 4 µs. The 128 channels are transmitted off chip in 9...

  9. Development of Sensor Technology and Its Application for Nuclear Radiation Detection

    International Nuclear Information System (INIS)

    Hiskia

    2007-01-01

    Radiation is energy in the form of waves or moving subatomic particles. Radiation can be ionizing or nonionizing radiation, depending on its effect on atomic matter. Because radiation cannot be seen, felt, tasted, heard or smelled, even at lethal levels, radiations detection devices must be used to alert those exposed to radiation. The measurement of radioactivity in the environment is a regulatory requirement around sites where significant amounts of radioactive materials are used or stored. Recently, advent in microelectronics and material technology has enabled to produce small sensor or microsensor, sensitive, accurate, and integrated in a chip or substrate. Development of radiation sensor technology using thin/thick film and micromachining technique was described in this paper. Indonesian capabilities in radiation sensor research and development and opportunities for commercialization also given. (author)

  10. The Development of Sensor Technology and Application to Detect Nuclear Radiation

    International Nuclear Information System (INIS)

    Hiskia

    2007-01-01

    Radiation is energy in the form of waves or moving subatomic particles. Radiation can be ionizing or non-ionizing radiation, depending on its effect on atomic matter. Because radiation cannot be seen, felt, tasted, heard or smelled, even at lethal levels, radiations detection devices must be used to alert those exposed to radiation. The measurement of radioactivity in the environment is a regulatory requirement around sites where significant amounts of radioactive materials are used or stored. Recently, advent in microelectronics and material technology has enabled to produce small sensor or microsensor, sensitive, accurate, and integrated in a chip or substrate. Development of radiation sensor technology using thin/thick film and micromachining technique was described in this paper. Indonesian capabilities in radiation sensor research and development and opportunities for commercialization also given. (author)

  11. Radiation dosimetry properties of smart-phone CMOS sensors

    International Nuclear Information System (INIS)

    Van Hoey, Olivier; Salavrakos, Alexia; Marques, Antonio; Nagao, Alexandre; Vanhavere, Filip; Cauwels, Vanessa; Nascimento, Luana F.; Willems, Ruben

    2016-01-01

    During the past years, several smart-phone applications have been developed for radiation detection. These applications measure radiation using the smart-phone camera complementary metal-oxide-semiconductor sensor. They are potentially useful for data collection and personal dose assessment in case of a radiological incident. However, it is important to assess these applications. Six applications were tested by means of irradiations with calibrated X-ray and gamma sources. It was shown that the measurement stabilises only after at least 10-25 min. All applications exhibited a flat dose rate response in the studied ambient dose equivalent range from 2 to 1000 μSv h -1 . Most applications significantly over- or underestimate the dose rate or are not calibrated in terms of dose rate. A considerable energy dependence was observed below 100 keV but not for the higher energy range more relevant for incident scenarios. Photon impact angle variation gave a measured signal variation of only about 10 %. (authors)

  12. The effect of gamma radiation on hardness evolution in high density polyethylene at elevated temperatures

    International Nuclear Information System (INIS)

    Chen, Pei-Yun; Chen, C.C.; Harmon, Julie P.; Lee, Sanboh

    2014-01-01

    This research focuses on characterizing hardness evolution in irradiated high density polyethylene (HDPE) at elevated temperatures. Hardness increases with increasing gamma ray dose, annealing temperature and annealing time. The hardness change is attributed to the variation of defects in microstructure and molecular structure. The kinetics of defects that control the hardness are assumed to follow the first order structure relaxation. The experimental data are in good agreement with the predicted model. The rate constant follows the Arrhenius equation, and the corresponding activation energy decreases with increasing dose. The defects that control hardness in post-annealed HDPE increase with increasing dose and annealing temperature. The structure relaxation of HDPE has a lower energy of mixing in crystalline regions than in amorphous regions. Further, the energy of mixing for defects that influence hardness in HDPE is lower than those observed in polycarbonate (PC), poly(methyl methacrylate) (PMMA) and poly (hydroxyethyl methacrylate) (HEMA). This is due to the fact that polyethylene is a semi-crystalline material, while PC, PMMA and PHEMA are amorphous. - Highlights: • Hardness of HDPE increases with increasing gamma ray dose, annealing time and temperature. • The hardness change arises from defects in microstructure and molecular structure. • Defects affecting hardness follow a kinetics of structure relaxation. • The structure relaxation has a low energy of mixing in crystalline regime

  13. The effect of gamma radiation on hardness evolution in high density polyethylene at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Pei-Yun [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chen, C.C. [Institute of Nuclear Energy Research, Longtan, Taoyuan 325, Taiwan (China); Harmon, Julie P. [Department of Chemistry, University of South Florida, Tampa, FL 33620 (United States); Lee, Sanboh, E-mail: sblee@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)

    2014-08-01

    This research focuses on characterizing hardness evolution in irradiated high density polyethylene (HDPE) at elevated temperatures. Hardness increases with increasing gamma ray dose, annealing temperature and annealing time. The hardness change is attributed to the variation of defects in microstructure and molecular structure. The kinetics of defects that control the hardness are assumed to follow the first order structure relaxation. The experimental data are in good agreement with the predicted model. The rate constant follows the Arrhenius equation, and the corresponding activation energy decreases with increasing dose. The defects that control hardness in post-annealed HDPE increase with increasing dose and annealing temperature. The structure relaxation of HDPE has a lower energy of mixing in crystalline regions than in amorphous regions. Further, the energy of mixing for defects that influence hardness in HDPE is lower than those observed in polycarbonate (PC), poly(methyl methacrylate) (PMMA) and poly (hydroxyethyl methacrylate) (HEMA). This is due to the fact that polyethylene is a semi-crystalline material, while PC, PMMA and PHEMA are amorphous. - Highlights: • Hardness of HDPE increases with increasing gamma ray dose, annealing time and temperature. • The hardness change arises from defects in microstructure and molecular structure. • Defects affecting hardness follow a kinetics of structure relaxation. • The structure relaxation has a low energy of mixing in crystalline regime.

  14. Design of Si-photonic structures to evaluate their radiation hardness dependence on design parameters

    International Nuclear Information System (INIS)

    Zeiler, M.; Detraz, S.; Olantera, L.; Pezzullo, G.; El Nasr-Storey, S. Seif; Sigaud, C.; Soos, C.; Troska, J.; Vasey, F.

    2016-01-01

    Particle detectors for future experiments at the HL-LHC will require new optical data transmitters that can provide high data rates and be resistant against high levels of radiation. Furthermore, new design paths for future optical readout systems for HL-LHC could be opened if there was a possibility to integrate the optical components with their driving electronics and possibly also the silicon particle sensors themselves. All these functionalities could potentially be combined in the silicon photonics technology which currently receives a lot of attention for conventional optical link systems. Silicon photonic test chips were designed in order to assess the suitability of this technology for deployment in high-energy physics experiments. The chips contain custom-designed Mach-Zehnder modulators, pre-designed ''building-block'' modulators, photodiodes and various other passive test structures. The simulation and design flow of the custom designed Mach-Zehnder modulators and some first measurement results of the chips are presented

  15. Towards radiation hard converter material for SiC-based fast neutron detectors

    Science.gov (United States)

    Tripathi, S.; Upadhyay, C.; Nagaraj, C. P.; Venkatesan, A.; Devan, K.

    2018-05-01

    In the present work, Geant4 Monte-Carlo simulations have been carried out to study the neutron detection efficiency of the various neutron to other charge particle (recoil proton) converter materials. The converter material is placed over Silicon Carbide (SiC) in Fast Neutron detectors (FNDs) to achieve higher neutron detection efficiency as compared to bare SiC FNDs. Hydrogenous converter material such as High-Density Polyethylene (HDPE) is preferred over other converter materials due to the virtue of its high elastic scattering reaction cross-section for fast neutron detection at room temperature. Upon interaction with fast neutrons, hydrogenous converter material generates recoil protons which liberate e-hole pairs in the active region of SiC detector to provide a detector signal. The neutron detection efficiency offered by HDPE converter is compared with several other hydrogenous materials viz., 1) Lithium Hydride (LiH), 2) Perylene, 3) PTCDA . It is found that, HDPE, though providing highest efficiency among various studied materials, cannot withstand high temperature and harsh radiation environment. On the other hand, perylene and PTCDA can sustain harsh environments, but yields low efficiency. The analysis carried out reveals that LiH is a better material for neutron to other charge particle conversion with competent efficiency and desired radiation hardness. Further, the thickness of LiH has also been optimized for various mono-energetic neutron beams and Am-Be neutron source generating a neutron fluence of 109 neutrons/cm2. The optimized thickness of LiH converter for fast neutron detection is found to be ~ 500 μm. However, the estimated efficiency for fast neutron detection is only 0.1%, which is deemed to be inadequate for reliable detection of neutrons. A sensitivity study has also been done investigating the gamma background effect on the neutron detection efficiency for various energy threshold of Low-Level Discriminator (LLD). The detection

  16. Radiation hardness investigation of avalanche photodiodes for the Projectile Spectator Detector readout at the Compressed Baryonic Matter experiment

    Czech Academy of Sciences Publication Activity Database

    Kushpil, Vasilij; Mikhaylov, Vasily; Kushpil, Svetlana; Tlustý, Pavel; Svoboda, Ondřej; Kugler, Andrej

    2015-01-01

    Roč. 787, JUL (2015), s. 117-120 ISSN 0168-9002 R&D Projects: GA MŠk LG12007; GA MŠk LG14004; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : avalanche photodiodes * single protons detection * radiation hardness * neutron irradiation tests * compressed Baryonic Matter experiment * Projectile Spectator Detector Subject RIV: BG - Nuclear, Atomic and Molecular Physics , Colliders Impact factor: 1.200, year: 2015

  17. Develop of BiI3 sensors for imagenology of radiations to ambient temperature

    International Nuclear Information System (INIS)

    Aguiar, I.

    2008-01-01

    The mastery refers to the obtention of images with radiations. The subject in study to be used as sensor of those radiations in the triodide of bismuth, since its properties makes it appropriate for the detections of ionizing and infrared radiation

  18. Experimental checking results of mathematical modeling of the radiation environment sensor based on diamond detectors

    International Nuclear Information System (INIS)

    Gladchenkov, E V; Kolyubin, V A; Nedosekin, P G; Zaharchenko, K V; Ibragimov, R F; Kadilin, V V; Tyurin, E M

    2017-01-01

    Were conducted a series of experiments, the purpose of which had to verify the mathematical model of the radiation environment sensor. Theoretical values of the beta particles count rate from 90 Sr - 90 Y source registered by radiation environment sensor was compared with the experimental one. Theoretical (calculated) count rate of beta particles was found with using the developed mathematical model of the radiation environment sensor. Deviation of the calculated values of the beta particle count rate does not exceed 10% from the experimental. (paper)

  19. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation.

    Science.gov (United States)

    Hahn, C; Weber, G; Märtin, R; Höfer, S; Kämpfer, T; Stöhlker, Th

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays - such as laser-generated plasmas - is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse.

  20. Final Technical Report Radiation Hard Tight Pitch GaInP SPAD Arrays for High Energy Physics

    Energy Technology Data Exchange (ETDEWEB)

    Harmon, Eric

    2018-01-26

    The specialized photodetectors used in high energy physics experiments often need to remain extremely sensitive for years despite radiation induced damage caused by the constant bombardment of high energy particles. To solve this problem, LightSpin Technologies, Inc. in collaboration with Prof. Bradley Cox and the University of Virginia is developing radiation-hard GaInP photodetectors which are projected to be extraordinarily radiation hard, theoretically capable of withstanding a 100,000-fold higher radiation dose than silicon. In this Phase I SBIR project, LightSpin investigated the performance and radiation hardness of fifth generation GaInP SPAD arrays. These fifth generation devices used a new planar processing approach that enables very tight pitch arrays to be produced. High performance devices with SPAD pitches of 11, 15, and 25 μm were successfully demonstrated, which greatly increased the dynamic range and maximum count rate of the devices. High maximum count rates are critical when considering radiation hardness, since radiation damage causes a proportional increase in the dark count rate, causing SPAD arrays with low maximum count rates (large SPAD pitches) to fail. These GaInP SPAD array Photomultiplier Chips™ were irradiated with protons, electrons, and neutrons. Initial irradiation results were disappointing, with the post-irradiation devices exhibiting excessively high dark currents. The degradation was traced to surface leakage currents that were largely eliminated through the use of trenches etched around the exterior of the Photomultiplier Chip™ (not between SPAD elements). A second round of irradiations on Photomultiplier Chips™ with trenches proved substantially more successful, with post-irradiation dark currents remaining relatively low, though dark count rates were observed to increase at the highest doses. Preliminary analysis of the post-irradiation devices is promising … many of the irradiated Photomultiplier Chips™ still

  1. Influence of variable tungsten valency on optical transmittance and radiation hardness of lead tungstate (PWO) scintillation crystals

    CERN Document Server

    Burachas, S; Makov, I; Saveliev, Yu; Ippolitov, M S; Man'ko, V; Nikulin, S P; Nyanin, A; Vasilev, A; Apanasenko, A; Tamulaitis, G

    2003-01-01

    A new approach to interpret the radiation hardness of PbWO//4 (PWO) scintillators is developed by revealing importance of the inclusions of tungsten oxides WO//3//-//x with variable valency. It is demonstrated that the influence of the ionizing radiation on PWO is, in many aspects, similar to the effect of the high-temperature annealing in oxygenless ambient. In both cases, a valency change of the tungsten oxides is initiated and results in induced absorption and, consequently, in crystal coloration. In the PWO crystals doped with L//2O//3 (L = Y, La, Gd), the radiation hardness and the optical properties are mainly affected by inclusions of W//1//-//yL//yO//3//- //x (0 less than x less than 0.3) instead of inclusions of WO//3//- //x prevailing in the undoped samples. It is demonstrated that the radiation-induced bleaching and the photochromic effect of PWO are caused by phase transitions in the inclusions of tungsten oxide. Thermodynamic conditions for the phase transitions are discussed and the optimal oxid...

  2. The use of antenna radiation pattern in node localisation algorithms for wireless sensor networks

    CSIR Research Space (South Africa)

    Mwila, MK

    2014-08-01

    Full Text Available due to the limited accuracy inherent to the current ranging model. These models, however, make the assumption that the antenna radiation pattern is omnidirectional targeted to simplifying the complexity of the algorithms. An increasing number of sensor...

  3. Test and Evaluation of Fiber Optic Sensors for High-Radiation Space Nuclear Power Applications

    International Nuclear Information System (INIS)

    Klemer, Daniel; Fielder, Robert S.; Stinson-Bagby, Kelly L.

    2004-01-01

    Fiber optic sensors can be used to measure a number of parameters, including temperature, strain, pressure and flow, for instrumentation and control of space nuclear power systems. In the past, this technology has often been rejected for use in such a high-radiation environment based on early experiments that revealed a number of degradation phenomena, including radiation-induced fiber attenuation, or 'graying', and Fiber Bragg Grating (FBG) fading and wavelength shift. However, this paper reports the results of recent experimental testing that demonstrates readability of fiber optic sensors to extremely high levels of neutron and gamma radiation. Both distributed Fiber Bragg Grating (FBG) sensors and single-point Extrinsic Fabry Perot Interferometer (EFPI) sensors were continuously monitored over a 2-month period, during which they were exposed to combined neutron and gamma radiation in both in-core and ex-core positions within a nuclear reactor. Total exposure reached approximately 2 x 10 19 cm -2 fast neutron (E > 1 MeV) fluence and 8.7 x 10 8 Gy gamma for in-core sensors. FBG sensors were interrogated using a standard Luna Innovations FBG measurement system, which is based on optical frequency-domain reflectometer (OFDR) technology. Approximately 74% of the 19 FBG sensors located at the core centerline in the in-core position exhibited sufficient signal-to-noise ratio (SNR) to remain readable even after receiving the maximum dose. EFPI sensors were spectrally interrogated using a broadband probe source operating in the 830 nm wavelength region. While these single-point sensors failed early in the test, important additional fiber spectral transmission data was collected, which indicates that interrogation of EFPI sensors in alternate wavelength regions may allow significant improvement in sensor longevity for operation in high-radiation environments. This work was funded through a Small Business Innovative Research (SBIR) contract with the Nasa Glenn Research

  4. Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

    National Research Council Canada - National Science Library

    Ahn, Charles H

    2006-01-01

    The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

  5. Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

    OpenAIRE

    Riegel, C; Backhaus, M; Hoorne, J W Van; Kugathasan, T; Musa, L; Pernegger, H; Riedler, P; Schaefer, D; Snoeys, W; Wagner, W

    2017-01-01

    A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS techn...

  6. Evaluation of erbium:YAG and holmium:YAG laser radiation and dental hard tissue

    Science.gov (United States)

    Attrill, David Cameron

    Lasers have become increasingly established in medicine as effective alternatives or adjuncts to conventional techniques. In dentistry, several clinical laser systems have been developed and marketed, but their applications have been limited to soft tissue surgery. To date, no laser has been capable of effectively cutting or modifying the highly mineralised dental tissues of enamel and dentine. The aim of this study was to evaluate two new laser systems for use in dentistry through a series of in vitro experiments. Both generic erbium and holmium lasers have theoretically superior operating characteristics over currently established lasers for applications with dental hard tissues. The two lasers investigated in this study were pulsed Er:YAG (lambda=2.94) a.m. and Cr-Tm-Ho:YAG (lambda=2.1mu.m). Both operated with a macropulse duration of approximately 200lambdas, at pulse repetition rates of 2-8Hz and mean pulse energies up to 230mJ. Radiation was focused using CaF[2] lenses (f=50-120mm). The lasers could be operated with or without the addition of a surface water film at the interaction site. Tissue removal efficiency was expressed as a latent heat of ablation (LHA, kJ/cm[3]) using a modification of the technique described by Charlton et al. (1990). The mean LHA's for the Er:YAG laser were 6.24kJ/cm[3] and 22.99kJ/cm[3] with dentine and enamel respectively without water, and 10.07kJ/cm[3] and 18.73kJ/cm[3] for dentine and enamel with water. The Cr-Tm-Ho:YAG laser was unable to effectively remove enamel at the fluences and pulse energies available; the mean LHA's for the Cr-Tm- Ho:YAG laser with dentine were 82.79kJ/cm3 and 57.57kJ/cm3 with and without water respectively. The Cr-Tm-Ho;YAG was approximately 8-9 times less efficient for tissue removal than the Er:YAG system. Er:YAG tissue removal with water was characterised by clean "surgical" cuts, comparable in histological appearance to those obtained using conventional instrumentation. Some thermal disruption

  7. X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiaguo

    2013-06-15

    electron-accumulation layer at the Si-SiO{sub 2} interface is observed. Its width increases with dose and decreases with applied bias. voltage. The electron-accumulation layer is relevant for the change of the electrical properties of segmented sensors. Finally, according to the optimum parameters of silicon pixel sensors from TCAD simulations taking the damage-related parameters into account, a radiation-hard silicon pixel sensor for the AGIPD Project has been designed.

  8. X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

    International Nuclear Information System (INIS)

    Zhang, Jiaguo

    2013-06-01

    -accumulation layer at the Si-SiO 2 interface is observed. Its width increases with dose and decreases with applied bias. voltage. The electron-accumulation layer is relevant for the change of the electrical properties of segmented sensors. Finally, according to the optimum parameters of silicon pixel sensors from TCAD simulations taking the damage-related parameters into account, a radiation-hard silicon pixel sensor for the AGIPD Project has been designed.

  9. Dense plasma focus PACO as a hard X-ray emitter: a study on the radiation source

    OpenAIRE

    Supán, L.; Guichón, S.; Milanese, Maria Magdalena; Niedbalski, Jorge Julio; Moroso, Roberto Luis; Acuña, H.; Malamud, Florencia

    2016-01-01

    The radiation in the X-ray range detected outside the vacuum chamber of the dense plasma focus (DPF) PACO, are produced on the anode zone. The zone of emission is studied in a shot-to-shot analysis, using pure deuterium as filling gas. We present a diagnostic method to determine the place and size of the hard X-ray source by image analysis of high density radiography plates. Fil: Supán, L.. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Insti...

  10. Surface Effects in Segmented Silicon Sensors

    OpenAIRE

    Kopsalis, Ioannis

    2017-01-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

  11. Ageing effects on image sensors due to terrestrial cosmic radiation

    NARCIS (Netherlands)

    Nampoothiri, G.G.; Horemans, M.L.R.; Theuwissen, A.J.P.

    2011-01-01

    We analyze the “ageing” effect on image sensors introduced by neutrons present in natural (terrestrial) cosmic environment. The results obtained at sea level are corroborated for the first time with accelerated neutron beam tests and for various image sensor operation conditions. The results reveal

  12. Radiation tolerant fiber optic humidity sensors for High Energy Physics applications

    CERN Document Server

    Berruti, Gaia Maria; Cusano, Andrea

    This work is devoted to the development of fiber optic humidity sensors to be applied in high-energy physics applications and in particular in experiments currently running at CERN. The high radiation level resulting from the operation of the accelerator at full luminosity can cause serious performance deterioration of the silicon sensors which are responsible for the particle tracking. To increase their lifetime, the sensors must be kept cold at temperatures below 0 C. At such low temperatures, any condensation risk has to be prevented and a precise thermal and hygrometric control of the air filling and surrounding the tracker detector cold volumes is mandatory. The technologies proposed at CERN for relative humidity monitoring are mainly based on capacitive sensing elements which are not designed with radiation resistance characteristic. In this scenario, fiber optic sensors seem to be perfectly suitable. Indeed, the fiber itself, if properly selected, can tolerate a very high level of radiation, optical fi...

  13. Shield or not to Shield: Effects of Solar Radiation on Water Temperature Sensor Accuracy

    Directory of Open Access Journals (Sweden)

    Robert L. Wilby

    2013-10-01

    Full Text Available Temperature sensors are potentially susceptible to errors due to heating by solar radiation. Although this is well known for air temperature (Ta, significance to continuous water temperature (Tw monitoring is relatively untested. This paper assesses radiative errors by comparing measurements of exposed and shielded Tinytag sensors under indirect and direct solar radiation, and in laboratory experiments under controlled, artificial light. In shallow, still-water and under direct solar radiation, measurement discrepancies between exposed and shielded sensors averaged 0.4 °C but can reach 1.6 °C. Around 0.3 °C of this inconsistency is explained by variance in measurement accuracy between sensors; the remainder is attributed to solar radiation. Discrepancies were found to increase with light intensity, but to attain Tw differences in excess of 0.5 °C requires direct, bright solar radiation (>400 W m−2 in the total spectrum. Under laboratory conditions, radiative errors are an order of magnitude lower when thermistors are placed in flowing water (even at velocities as low as 0.1 m s−1. Radiative errors were also modest relative to the discrepancy between different thermistor manufacturers. Based on these controlled experiments, a set of guidelines are recommended for deploying thermistor arrays in water bodies.

  14. The wireless sensor network monitoring system for regional environmental nuclear radiation

    International Nuclear Information System (INIS)

    Liu Chong; Liu Dao; Wang Yaojun; Xie Yuxi; Song Lingling

    2012-01-01

    The wireless sensor network (WSN) technology has been utilized to design a new regional environmental radiation monitoring system based on the wireless sensor networks to meet the special requirements of monitoring the nuclear radiation in certain regions, and realize the wireless transmission of measurement data, information processing and integrated measurement of the nuclear radiation and the corresponding environmental parameters in real time. The system can be applied to the wireless monitoring of nuclear radiation dose in the nuclear radiation environment. The measured data and the distribution of radiation dose can be vividly displayed on the graphical interface in the host computer. The system has functioned with the wireless transmission and control, the data storage, the historical data inquiry, the node remote control. The experimental results show that the system has the advantages of low power consumption, stable performance, network flexibility, range of measurement and so on. (authors)

  15. Development of radiation-hard electric connector with ball bearing for in-vessel remote maintenance equipment of ITER

    International Nuclear Information System (INIS)

    Ito, Akira; Obara, Kenjiro; Tada, Eisuke; Morita, Yousuke; Yagi, Toshiaki; Iida, Kazuhisa; Sato, Masaru.

    1997-12-01

    Development of radiation-hard electric connector with ball bearing for in-vessel remote maintenance equipment of ITER (International Thermonuclear Experimental Reactor) has been conducted. Since the in-vessel remote maintenance equipment is operated under the condition of 10 6 R/h gamma ray dose rate, the electric connector has to be radiation hard for an accumulation dose of 10 10 R. In addition, the simple attachment/removal mechanism is essential for remote operation. For this, the alumina (Al203) ceramics and a ball bearing were adopted to electric insulator and plug (male) of connector, respectively. The handling tests on attachment/removal of the connector were conducted by using master slave manipulator and general purpose robot with handling tool, and as a result, the validity of the attachment/removal mechanism was verified. In the gamma ray irradiation tests, which are under way, no degradation in break down voltage (1000V 1min.) up to 10 10 R was confirmed. However insulation resistance and contact resistance between contact pin and contact socket were deteriorated in proportion to the accumulation dose. Increase of contact resistance is considered due to an erosion of contact pin. (author)

  16. Recent Progress in Synchrotron Radiation Photoemission Spectroscopy of Solids : Applications of VUV, Soft and Hard X-Ray Radiation

    International Nuclear Information System (INIS)

    Taniguchi, M.

    2004-01-01

    The Hiroshima Synchrotron Radiation Center is a common facility for both research and education in the field of synchrotron radiation science. The operation of the light source was started from March 1998. The storage ring can be operated at 700 MeV with a critical energy of 873 eV. The machine has a racetrack shape with a circumference of 22 m, and has 14 photon beam ports. The maximum operational current is 300 mA, and the beam lifetime is longer than 6 h at 200 mA. Of total 13 beamlines introduced so far, three beamlines are dedicated to photoemission spectroscopy (PES). An available photon-energy range is hν=26-300 eV. A hemispherical photoelectron analyzer is equipped at the end station. Total energy resolution has been achieved to ∼ 15 meV at hν=100 eV. The photon-energy range is hν=4-40 eV and total energy resolution is ∼ 4.5 meV at hν=7 eV. Although total energy resolution has been achieved to ∼25 meV at hν=80 eV, we usually carry out the PES experiments. The PES spectra taken at hν∼7 eV provide information on the conduction band electrons. In order to investigate the bulk-originated electronic structure we started the hard x-ray PES experiments with a total energy resolution of ∼ 270 meV. Thus, we promote the research project with use of light in a wide energy-range (7 eV-6 keV). 1) Unusual energy gap formation in the Kondo semiconductor CeRhAs has attracted much interest for its unusual energy gap formation or metal-to-insulator transition as temperature decreases. The energy gap is assumed to be formed by the temperature dependence of the c-f hybridization. By means of resonant PES, we could observe a energy-gap structure in the Ce 4f states. In order to observe As 4p state and Rh 4d state, we have measured the PES spectra at hν=7.9 eV, 40 eV and 6 keV, respectively, due to the photon-energy dependence of photoionization cross-section. From the spectra at hν=7.9 eV, we could see that the density of states (DOS) near E F decreases with

  17. Simulations of depleted CMOS sensors for high-radiation environments

    CERN Document Server

    Liu, J.; Bhat, S.; Breugnon, P.; Caicedo, I.; Chen, Z.; Degerli, Y.; Godiot-Basolo, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Hügging, F.; Krüger, H.; Moustakas, K.; Pangaud, P.; Rozanov, A.; Rymaszewski, P.; Schwemling, P.; Wang, M.; Wang, T.; Wermes, N.; Zhang, L.

    2017-01-01

    After the Phase II upgrade for the Large Hadron Collider (LHC), the increased luminosity requests a new upgraded Inner Tracker (ITk) for the ATLAS experiment. As a possible option for the ATLAS ITk, a new pixel detector based on High Voltage/High Resistivity CMOS (HV/HR CMOS) technology is under study. Meanwhile, a new CMOS pixel sensor is also under development for the tracker of Circular Electron Position Collider (CEPC). In order to explore the sensor electric properties, such as the breakdown voltage and charge collection efficiency, 2D/3D Technology Computer Aided Design (TCAD) simulations have been performed carefully for the above mentioned both of prototypes. In this paper, the guard-ring simulation for a HV/HR CMOS sensor developed for the ATLAS ITk and the charge collection efficiency simulation for a CMOS sensor explored for the CEPC tracker will be discussed in details. Some comparisons between the simulations and the latest measurements will also be addressed.

  18. Work Hard / Play Hard

    OpenAIRE

    Burrows, J.; Johnson, V.; Henckel, D.

    2016-01-01

    Work Hard / Play Hard was a participatory performance/workshop or CPD experience hosted by interdisciplinary arts atelier WeAreCodeX, in association with AntiUniversity.org. As a socially/economically engaged arts practice, Work Hard / Play Hard challenged employees/players to get playful, or go to work. 'The game changes you, you never change the game'. Employee PLAYER A 'The faster the better.' Employer PLAYER B

  19. Observation of The Top of The Atmosphere Outgoing Longwave Radiation Using The Geostationary Earth Radiation Budget Sensor

    Science.gov (United States)

    Spencer, G.; Llewellyn-Jones, D.

    In the summer of 2002 the Meteosat Second Generation (MSG) satellite is due to be launched. On board the MSG satellite is the Geostationary Earth Radiation Budget (GERB) sensor. This is a new radiometer that will be able to observe and measure the outgoing longwave radiation from the top of the atmosphere for the whole ob- served Earth disc, due to its unique position in geostationary orbit. Every 15 minutes the GERB sensor will make a full Earth disc observation, centred on the Greenwich meridian. Thus, the GERB sensor will provide unprecedented coupled temporal and spatial resolution of the outgoing longwave radiation (4.0 to 30.0 microns), by first measuring the broadband radiation (0.32 to 30.0 microns) and then subtracting the measured reflected shortwave solar radiation (0.32 to 4.0 microns), from the earth- atmosphere system. The GERB sensor is able to make measurements to within an accuracy of 1 W/sq. m. A forward model is being developed at Leicester to simulate the data from the GERB sensor for representative geophysical scenes and to investigate key parameters and processes that will affect the top of the atmosphere signal. At the heart of this model is a line-by-line radiative transfer model, the Oxford Reference Forward Model (RFM) that is to be used with model atmospheres generated from ECMWF analysis data. When MSG is launched, cloud data from the Spinning Enhanced Visible and Infrared Imager (SEVIRI), also on board, is to be used in conjunction with GERB data.

  20. Classification of Reactor Facility Operational State Using SPRT Methods with Radiation Sensor Networks

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez Aviles, Camila A. [ORNL; Rao, Nageswara S. [ORNL

    2018-01-01

    We consider the problem of inferring the operational state of a reactor facility by using measurements from a radiation sensor network, which is deployed around the facility’s ventilation stack. The radiation emissions from the stack decay with distance, and the corresponding measurements are inherently random with parameters determined by radiation intensity levels at the sensor locations. We fuse measurements from network sensors to estimate the intensity at the stack, and use this estimate in a one-sided Sequential Probability Ratio Test (SPRT) to infer the on/off state of the reactor facility. We demonstrate the superior performance of this method over conventional majority vote fusers and individual sensors using (i) test measurements from a network of NaI sensors, and (ii) emulated measurements using radioactive effluents collected at a reactor facility stack. We analytically quantify the performance improvements of individual sensors and their networks with adaptive thresholds over those with fixed ones, by using the packing number of the radiation intensity space.

  1. Measurement of radiation induced transients in hybrid microcircuits by magnetic thin film sensor/recorders

    International Nuclear Information System (INIS)

    Hsieh, E.J.; Vindelov, K.E.; Brown, T.G.; Miller, D.E.

    1976-01-01

    Magnetic thin film transient current sensor/recorders were modified to make two types of nuclear test measurements, transient currents in hybrid microcircuits and internal electromagnetic pulse (IEMP) fields. The measurements were made possible by the invention of split-domain sensor/recorders which can measure bilateral currents and can be reset and readout on location. The sensor/recorders were used in two underground nuclear tests and numerous calibration tests in radiation-simulation machines. The data showed that the nuclear environment had negligible effect on the sensor/recorder's operation and the recorded informations on the sensor/recorders were the signals intended to be monitored. Also, the experimental data agreed with the theoretical analysis in controlled experiments. The data were examined first by on location readout with a magnetic tape viewer and later by Kerr magneto-optic readout in the laboratory. To translate the data into current readings, we reconstructed facsimile data (on each of the sensor/recorders) in the laboratory by current pulses with the same pulse width as the radiation event. An additional check on the accuracy of the data was made by using both the sensor/recorder and the conventional pickup-oscilloscope-camera technique to monitor the same current lead in a simulated radiation environment. Over five runs were made, and the agreement among the two measurement methods was within 25%. The data collectively implied that the measurements were reliable and dependable

  2. Gamma and Neutron Irradiation of Semitransparent Amorphous Silicon Sensors

    International Nuclear Information System (INIS)

    Carabe, J.; Fernandez, M. G.; Ferrando, A.; Fuentes, J.; Gandia, J.; Josa, M. I.; Molinero, A.; Oller, J. C.; Arce, P.; Calvo, E.; Figueroa, C. F.; Garcia, N.; Matorras, F.; Rodrigo, T.; Vila, I.; Virto, A. L.; Fenyvesi, A.; Molnar, J.; Sohler, D.

    1999-12-01

    Semitransparent amorphous silicon sensors are key elements for laser light 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in very hard radiation environment. We have irradiated with gammas, up to 10 Mrad, and neutrons, up to 10 ''14 cm''-2, two different type of sensors and measured their change in performance. (Author) 10 refs

  3. Integrating Two-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Non-Volatile Memory

    Data.gov (United States)

    National Aeronautics and Space Administration — The space radiation environment presents a significant hazard to the critical electronic components used in a variety of space applications. Many such applications...

  4. Radiation Hard Wide Temperature Range Mixed-Signal Components, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Low temperature survivability, high performance and radiation tolerance of electronics in combination is required for NASA's surface missions. Modern sub-micron CMOS...

  5. Signal development in silicon sensors used for radiation detection

    International Nuclear Information System (INIS)

    Becker, Julian

    2010-08-01

    This work investigates the charge collection properties in silicon sensors. In order to perform the investigations a setup for measurements utilizing the Transient Current Technique (TCT) has been designed and built. Optical lasers with different wavelengths and short pulses (FWHM<100 ps) have been used to create charge carriers in the sensor volume. A new parameterization of charge carrier mobilities in bulk silicon as function of electric field and temperature was derived for two different crystal orientations from investigations on pad sensors with low charge carrier densities. In the course of these investigations a simulation program for current pulses was developed. The program simulates current pulses, which are induced by drift and diffusion of charge carriers for pad sensors, and approximately for strip and pixel sensors. The simulation program could be used to describe the current pulses of irradiated sensors. Additionally, using the simulation program, it was shown that impact ionization is a possible reason for the recently reported charge multiplication effects in highly irradiated sensors. The central topic of this work is the investigation of effects of high charge carrier densities, so called plasma effects. In this work plasma effects were created by focusing the lasers. The measurements of the plasma efffects on pad sensors were used as reference measurements for simulations performed by WIAS in Berlin. It was shown that using charge transport models accepted in literature, the observed plasma effects cannot be described. Measurements on strip sensors were performed with regards to the detector development for the European XFEL. Measurements of peak currents and charge collection times as function of photon intensity and applied bias voltage allowed the determination of optimum operation parameters of the Adaptive Gain Integration Pixel Detector (AGIPD), which will be used at the European XFEL. Utilizing position sensitive measurements on strip

  6. Signal development in silicon sensors used for radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Julian

    2010-08-15

    This work investigates the charge collection properties in silicon sensors. In order to perform the investigations a setup for measurements utilizing the Transient Current Technique (TCT) has been designed and built. Optical lasers with different wavelengths and short pulses (FWHM<100 ps) have been used to create charge carriers in the sensor volume. A new parameterization of charge carrier mobilities in bulk silicon as function of electric field and temperature was derived for two different crystal orientations from investigations on pad sensors with low charge carrier densities. In the course of these investigations a simulation program for current pulses was developed. The program simulates current pulses, which are induced by drift and diffusion of charge carriers for pad sensors, and approximately for strip and pixel sensors. The simulation program could be used to describe the current pulses of irradiated sensors. Additionally, using the simulation program, it was shown that impact ionization is a possible reason for the recently reported charge multiplication effects in highly irradiated sensors. The central topic of this work is the investigation of effects of high charge carrier densities, so called plasma effects. In this work plasma effects were created by focusing the lasers. The measurements of the plasma efffects on pad sensors were used as reference measurements for simulations performed by WIAS in Berlin. It was shown that using charge transport models accepted in literature, the observed plasma effects cannot be described. Measurements on strip sensors were performed with regards to the detector development for the European XFEL. Measurements of peak currents and charge collection times as function of photon intensity and applied bias voltage allowed the determination of optimum operation parameters of the Adaptive Gain Integration Pixel Detector (AGIPD), which will be used at the European XFEL. Utilizing position sensitive measurements on strip

  7. A Study on the Response Characteristics of a Fiber-Optic Radiation Sensor Model Based on Cerenkov Principle

    Energy Technology Data Exchange (ETDEWEB)

    Han, Hwa Jeong; Kim, Beom Kyu; Park, Byung Gi [Soonchunhyang Univ., Asan (Korea, Republic of)

    2016-10-15

    In recent year, various fiber-optic radiation sensors using Cerenkov principle have been developed without employing any scintillators for measuring high-energy photon, electron, etc. The main advantages of the optical fibers are the remote transmission of the light signal and immunity to pressure and electromagnetic waves. Therefore, the sensors utilizing the optical fibers can be used in hazardous radiation environments, such as the high-level radiation areas of a nuclear facility. The study to be simulated a fiber-optic radiation sensor based on Cerenkov principle and to be analyzed the response characteristics of the sensor. For the aforementioned study, the GEANT simulation toolkit was used. It is able to take into all the optical properties of fibers and is found to be appropriate to realistically describe the response of fiber-optic radiation sensor. In the recently, the fiber-optic radiation sensor have been developed in nuclear industry. Because sensor can detect gamma ray in harsh nuclear environments. In this study, we analyzed response characteristics of the fiber-optic radiation sensor. We have simulated the Monte Carlo model, for detecting the Cerenkov radiation using the fiber-optic radiation sensor. And the y-axis distribution of Cerenkov photons was obtained using output file. Simulation is performed with reference to the method of the previous research, and then the simulation results exhibited a good agreement with the previous research.

  8. A Study on the Response Characteristics of a Fiber-Optic Radiation Sensor Model Based on Cerenkov Principle

    International Nuclear Information System (INIS)

    Han, Hwa Jeong; Kim, Beom Kyu; Park, Byung Gi

    2016-01-01

    In recent year, various fiber-optic radiation sensors using Cerenkov principle have been developed without employing any scintillators for measuring high-energy photon, electron, etc. The main advantages of the optical fibers are the remote transmission of the light signal and immunity to pressure and electromagnetic waves. Therefore, the sensors utilizing the optical fibers can be used in hazardous radiation environments, such as the high-level radiation areas of a nuclear facility. The study to be simulated a fiber-optic radiation sensor based on Cerenkov principle and to be analyzed the response characteristics of the sensor. For the aforementioned study, the GEANT simulation toolkit was used. It is able to take into all the optical properties of fibers and is found to be appropriate to realistically describe the response of fiber-optic radiation sensor. In the recently, the fiber-optic radiation sensor have been developed in nuclear industry. Because sensor can detect gamma ray in harsh nuclear environments. In this study, we analyzed response characteristics of the fiber-optic radiation sensor. We have simulated the Monte Carlo model, for detecting the Cerenkov radiation using the fiber-optic radiation sensor. And the y-axis distribution of Cerenkov photons was obtained using output file. Simulation is performed with reference to the method of the previous research, and then the simulation results exhibited a good agreement with the previous research

  9. World Health Organization, radiofrequency radiation and health - a hard nut to crack (Review)

    OpenAIRE

    Hardell, Lennart

    2017-01-01

    In May 2011 the International Agency for Research on Cancer (IARC) evaluated cancer risks from radiofrequency (RF) radiation. Human epidemiological studies gave evidence of increased risk for glioma and acoustic neuroma. RF radiation was classified as Group 2B, a possible human carcinogen. Further epidemiological, animal and mechanistic studies have strengthened the association. In spite of this, in most countries little or nothing has been done to reduce exposure and educate people on health...

  10. Radiation-hard analog-to-digital converters for space and strategic applications

    Science.gov (United States)

    Gauthier, M. K.; Dantas, A. R. V.

    1985-01-01

    During the course of the Jet Propulsion Laboratory's program to study radiation-hardened analog-to-digital converters (ADCs), numerous milestones have been reached in manufacturers' awareness and technology development and transfer, as well as in user awareness of these developments. The testing of ADCs has also continued with twenty different ADCs from seven manufacturers, all tested for total radiation dose and three tested for neutron effects. Results from these tests are reported.

  11. Military Handbook: Management and Design Guidance Electromagnetic Radiation Hardness for Air Launched Ordnance Systems

    Science.gov (United States)

    1981-01-15

    system is attacted to the delivery aircraft until it Impacto a target, it is exposed to electromagnetic radiation from emitters aboard the delivery...homogeneous, isotropic, ambient medium may be a lossy dielectric. Antenna computations include cur- rent distribution, input impedance, radiation...permissible ambient interference level in the system, and when determining the expected signal-to-inter- ference ratio of the signal transmission circuits

  12. World Health Organization, radiofrequency radiation and health - a hard nut to crack (Review).

    Science.gov (United States)

    Hardell, Lennart

    2017-08-01

    In May 2011 the International Agency for Research on Cancer (IARC) evaluated cancer risks from radiofrequency (RF) radiation. Human epidemiological studies gave evidence of increased risk for glioma and acoustic neuroma. RF radiation was classified as Group 2B, a possible human carcinogen. Further epidemiological, animal and mechanistic studies have strengthened the association. In spite of this, in most countries little or nothing has been done to reduce exposure and educate people on health hazards from RF radiation. On the contrary ambient levels have increased. In 2014 the WHO launched a draft of a Monograph on RF fields and health for public comments. It turned out that five of the six members of the Core Group in charge of the draft are affiliated with International Commission on Non-Ionizing Radiation Protection (ICNIRP), an industry loyal NGO, and thus have a serious conflict of interest. Just as by ICNIRP, evaluation of non-thermal biological effects from RF radiation are dismissed as scientific evidence of adverse health effects in the Monograph. This has provoked many comments sent to the WHO. However, at a meeting on March 3, 2017 at the WHO Geneva office it was stated that the WHO has no intention to change the Core Group.

  13. A mixed analog-digital radiation hard technology for high energy physics electronics DMILL (Durci Mixte sur Isolant Logico-Linéaire)

    CERN Document Server

    Beuville, E; Borgeaud, P; Fourches, N T; Rouger, M; Blanc, J P; Bruel, M; Delevoye-Orsier, E; Gautier, J; Du Port de Pontcharra, J; Truche, R; Dupont-Nivet, E; Flament, O; Leray, J L; Martin, J L; Montaron, J; Borel, G; Brice, J M; Chatagnon, P; Terrier, C; Aubert, Jean-Jacques; Delpierre, P A; Habrard, M C; Potheau, R; CERN. Geneva. Detector Research and Development Committee

    1992-01-01

    The high radiation level expected in the inner regions of the high luminosity LHC detectors (gamma and neutron) will require radiation hardened electronics. A consortium between the CEA (Commissariat a l'Energie Atomique) and Thomson TMS (Thomson Composants Militaires et Spatiaux) has been created to push for the development and the industrialization of a nascent technology which looks particularly adapted to the needs of HEP electronics. This technology, currently under development at the LETI(CEA), uses a SIMOX substrate with an epitaxial silicon film. It includes CMOS, JFETs and vertical bipolar transistors with a potential multi-megarad hardness. The CMOS and bipolar transistors constitute a rad-hard BiCMOS which will be useful to design analog and digital high-speed architectures. JFETs, which have intrinsically high hardness behaviour and low noise performances even at low temperature will enable very rad-hard, low noise front end electronics to be designed. Present results, together with the improvemen...

  14. Custom high-reliability radiation-hard CMOS-LSI circuit design

    International Nuclear Information System (INIS)

    Barnard, W.J.

    1981-01-01

    Sandia has developed a custom CMOS-LSI design capability to provide high reliability radiation-hardened circuits. This capability relies on (1) proven design practices to enhance reliability, (2) use of well characterized cells and logic modules, (3) computer-aided design tools to reduce design time and errors and to standardize design definition, and (4) close working relationships with the system designer and technology fabrication personnel. Trade-offs are made during the design between circuit complexity/performance and technology/producibility for high reliability and radiation-hardened designs to result. Sandia has developed and is maintaining a radiation-hardened bulk CMOS technology fabrication line for production of prototype and small production volume parts

  15. GfW-handbook for irradiation test guidelines for radiation hardness of electronic components

    International Nuclear Information System (INIS)

    Braeunig, D.; Wulf, F.; Gaebler, W.; Boden, A.

    1982-12-01

    The purpose of the report is to propose irradiation test methods so that a standardized application of the methods can lead to a better comparison of test results. The interaction of different radiation species with matter - ionization and displacement - is described. Application of appropriate radiation sources, dosimetry problems, and shielding for simulating space radiation effects by laboratory testing is discussed. The description and characteristics of the irradiation sources are presented. Flowcharts of the planning and running of irradiation tests are given. Guidelines for running the tests are established, test methods and test circuits are proposed. The test system offers the capability of measuring devices also of high complexity up to microprocessors. The test results are collected regularly and are published in GfW-Handbook TN53/08, 'Data Compilation of Irradiation Tested Electronic Components'. (orig./HP) [de

  16. Radiation-hard, high efficiency InP solar cell and panel development

    International Nuclear Information System (INIS)

    Keavney, C.J.; Vernon, S.M.; Haven, V.E.; Nowlan, M.J.; Walters, R.J.; Slatter, R.L.; Summers, G.P.

    1991-01-01

    Indium phosphide solar cells with efficiencies over 19% (Air mass zero, 25 degrees C) and area of 4 cm 2 have been made and incorporated into prototype panels. The panels will be tested in space to confirm the high radiation resistance expected from InP solar cells, which makes the material attractive for space use, particularly in high-radiation orbits. Laboratory testing indicated an end-of-life efficiency of 15.5% after 10 15 1 MeV electrons, and 12% after 10 16 . These cells are made by metalorganic chemical vapor deposition, and have a shallow homojunction structure. The manufacturing process is amendable to scale-up to larger volumes; more than 200 cells were produced in the laboratory operation. Cell performance, radiation degradation, annealing behavior, and results of deep level transient spectroscopy studies are presented in this paper

  17. Investigation of characteristics and radiation hardness of the Beetle 1.0 front-end chip

    CERN Document Server

    Van Bakel, N; Jans, E; Klous, S; Verkooijen, H

    2001-01-01

    Noise characteristics of the Beetle 1.0 front-end chip have been investigated as a function of input capacitance. Values for the equivalent noise charge and ballastic deficit have been extracted. Amplification and pulse shape have been studied by varying the bias settings over a wide range. Results are compared with simulations that include realistic impedances at the input and output. The chip has been subjected to 10 Mrad of radiation. Subsequently, its behaviour is measured again and compared to that preceeding the irradiation. Observed radiation damage effects are discussed.

  18. Radiation hardness and qualification of semiconductor electronic devices for nuclear reactors

    International Nuclear Information System (INIS)

    Friant, A.; Payat, R.

    1984-05-01

    After a brief review of radiation effects in semiconductors and radiation damage in semiconductor devices, the problems of qualification of electronic equipment to be used in nuclear reactors are compared to those relative to nuclear weapons or space experiments. The conclusion is that data obtained at very high dose rates or under pulsed irradiation in weapons and space programs should not be directly applied to nuclear plant instrumentation. The need for a specific qualification of semiconductor devices appropriate for nuclear reactors is emphasized. Some irradiation studies at IRDI/DEIN (CEN-Saclay) are related [fr

  19. 4T CMOS Active Pixel Sensors under Ionizing Radiation

    NARCIS (Netherlands)

    Tan, J.

    2013-01-01

    This thesis investigates the ionizing radiation effects on 4T pixels and the elementary in-pixel test devices with regard to the electrical performance and the optical performance. In addition to an analysis of the macroscopic pixel parameter degradation, the radiation-induced degradation mechanisms

  20. Design of Zigbee-Based Wireless Sensor suitable for Radiation Detection and Monitoring

    International Nuclear Information System (INIS)

    Madian, A.A.

    2012-01-01

    This paper presents a design for a wireless sensor nuclear radiation monitoring and detection based on Zigbee. The system consists of transmitter and receiver modules. The wireless sensor installed at transmitter whiles the receiver processing data. The communication between Tx and Rx done through Zigbee module using the protocol of CSMA/CA. The Zigbee has the advantages of reliable, power-efficient, and low-latency communications between low-cost Tx/Rx.The wireless sensor implementation can easily be deployed to discover unusual or abnormal radioactivity. The sensors are convenient to be installed indoors or outdoors, as well as to be mounted on mobile equipment's. All wireless nuclear detection sensors are designed using micro controller and other integrated systems

  1. Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

    CERN Document Server

    Beringer, J; Mommsen, R K; Nickerson, R B; Weidberg, A R; Monnier, E; Hou, H Q; Lear, K L

    1999-01-01

    We study the radiation hardness and the lifetime of Light Emitting Diodes (LEDs) and Vertical Cavity Surface Emitting Laser diodes (VCSELs) in the context of the development of the optical readout for the ATLAS SemiConductor Tracker (SCT) at LHC. About 170 LEDs from two different manufacturers and about 130 VCSELs were irradiated with neutron and proton fluences equivalent to (and in some cases more than twice as high as) the combined neutral and charged particle fluence of about 5x10 sup 1 sup 4 n (1 MeV eq. in GaAs)/cm sup 2 expected in the ATLAS inner detector. We report on the radiation damage and the conditions required for its partial annealing under forward bias, we calculate radiation damage constants, and we present post-irradiation failure rates for LEDs and VCSELs. The lifetime after irradiation was investigated by operating the diodes at an elevated temperature of 50 degree sign C for several months, resulting in operating times corresponding to up to 70 years of operation in the ATLAS SCT. From o...

  2. Studies for the LHCb SciFi Tracker - Development of Modules from Scintillating Fibres and Tests of their Radiation Hardness

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00341158

    The LHCb detector will see a major upgrade in the LHC long shutdown 2, which is planned for 2019/20. Among others, the tracking stations, currently realised as silicon strip and drift tube detectors, will be replaced by the Scintillating Fibre (SciFi) Tracker. The SciFi Tracker is based on scintillating fibres with a diameter of $\\text 250 \\mu m$, read out by multichannel silicon photomultipliers. The two major challenges related to the fibres are the radiation damage of the light guidance and the production of precise multi-layer fibre mats. This thesis presents radiation hardness studies performed with protons at the tandem accelerator at Forschungszentrum Garching and in situ in the LHCb cavern. The obtained results are combined with additional data of the LHCb SciFi group and two different wavelength dependent models of the radiation induced attenuation are determined. These are used to simulate the relative light yield, for both models it drops to $83 \\%$ on average at the end of the nominal lifetime of ...

  3. Studies for the LHCb SciFi tracker. Development of modules from scintillating fibres and tests of their radiation hardness

    Energy Technology Data Exchange (ETDEWEB)

    Ekelhof, Robert Jan

    2016-05-18

    The LHCb detector will see a major upgrade in the LHC long shutdown 2, which is planned for 2019/20. Among others, the tracking stations, currently realised as silicon strip and drift tube detectors, will be replaced by the Scintillating Fibre (SciFi) Tracker. The SciFi Tracker is based on scintillating fibres with a diameter of 250 μm, read out by multichannel silicon photomultipliers. The two major challenges related to the fibres are the radiation damage of the light guidance and the production of precise multi-layer fibre mats. This thesis presents radiation hardness studies performed with protons at the tandem accelerator at Forschungszentrum Garching and in situ in the LHCb cavern. The obtained results are combined with additional data of the LHCb SciFi group and two different wavelength dependent models of the radiation induced attenuation are determined. These are used to simulate the relative light yield, for both models it drops to 83% on average at the end of the nominal lifetime of the SciFi Tracker. A machine and techniques to produce multi-layer fibre mats were developed and optimised. Procedures for the production and alignment are described. These are implemented in the serial production of the SciFi modules which will start in the second quarter 2016.

  4. Study of Radiation Hardness of Lattice Matched AlInN/GaN HEMT Heterostructures

    Science.gov (United States)

    2016-10-01

    the wedge to a nanomanipulator probe. d- Lifting -out of the wedge from the bulk sample. e- Attachment of a portion of the wedge to one of the silicon...out by subcontractor Scientic, Inc. The exposures were conducted at the Gamma Radiation Facility at NAVSEA Crane division with doses up to ~6 Mrad

  5. Radiation effects and hardness of semiconductor electronic devices for nuclear industry

    International Nuclear Information System (INIS)

    Payat, R.; Friant, A.

    1988-01-01

    After a brief review of industrial and nuclear specificity and radiation effects in electronics components (semiconductors) the need for a specific test methodology of semiconductor devices is emphasized. Some studies appropriate for nuclear industry at D. LETI/DEIN/CEN-SACLAY are related [fr

  6. Investigation of single defects created in crystals by laser emission and hard radiation

    International Nuclear Information System (INIS)

    Martynovich, E F; Dresvyanskiy, V P; Boychenko, S V; Rakevich, A L; Zilov, S A; Bagayev, S N

    2017-01-01

    The possibility of identifying radiation-created quantum systems via the characteristics of quantum trajectories of luminescence intensity measured on individual centers by confocal scanning fluorescence microscopy with the time-correlated single photon counting has been studied. Calculations of the quantum trajectories have been carried out by the density matrix method. Experimental studies have been carried out using a confocal microscope. (paper)

  7. Research on continuous environmental radiation monitoring system for NPP based on wireless sensor network

    International Nuclear Information System (INIS)

    Fu Hailong; Jia Mingchun; Peng Guichu

    2010-01-01

    According to the characteristics of environmental gamma radiation monitoring and the requirement of nuclear power plant (NPP) developing, a new continuous environmental radiation monitoring system based on wireless sensor network (WSN) was presented. The basic concepts and application of WSN were introduced firstly. And then the characteristics of the new system were analyzed. At the same time the configuration of the WSN and the whole structure of the system were built. Finally, the crucial techniques used in system designing, such as the design of sensor node, the choice of communication mode and protocol, the time synchronization and space location, the security of the network and the faults tolerance were introduced. (authors)

  8. Nuclear radiation sensors and monitoring following a nuclear or radiological emergencies

    International Nuclear Information System (INIS)

    Bhatnagar, P.K.

    2009-01-01

    Management of Nuclear and Radiological Emergencies arising from Radiological Dispersive Device (RDD), Improvised Nuclear Devices (IND), Nuclear Reactors/Power plants and Nuclear War require measurement of ionizing radiations and radioactivity on an enhanced scale relative to the levels encountered in peaceful uses of ionizing radiations and radioactivity. It is heartening that since Hiroshima, Nagasaki nuclear disaster, the world has been quiet but since early 2000 there has been a fear of certain devices to be used by terrorists, which could lead to panic, and disaster due to dispersal of radioactivity by RDD, IND. Nuclear attack would lead to blast, thermal, initial nuclear radiation, nuclear fall out leading to gamma and neutron dose, dose rates in range from few R, R/h to kR, kR/h, and determinations of k Bq or higher order. Such situations have been visualized at national levels and National Disaster Management Authority NDMA has been established and Disaster Management Act 2005 has come into existence. NDMA has prepared guidelines for Nuclear and radiological emergency management highlighting preparedness, mitigation, response, capacity building, etc. Critical point in all these issues is detection of emergency, quick intimation to the concerned for action in shortest possible time. Upper most requirement by those involved in pursuing action, is radiation sensor based radiation monitors for personnel, area, and to assess contamination due to radioactivity.This presentation briefly describes the Indian scenario in the development of the radiation sensors and the sensor-based radiation monitors. (author)

  9. Nuclear radiation sensors and monitoring following a nuclear or radiological emergencies

    Energy Technology Data Exchange (ETDEWEB)

    Bhatnagar, P K [Defence Laboratory, Jodhpur (India)

    2009-01-15

    Management of Nuclear and Radiological Emergencies arising from Radiological Dispersive Device (RDD), Improvised Nuclear Devices (IND), Nuclear Reactors/Power plants and Nuclear War require measurement of ionizing radiations and radioactivity on an enhanced scale relative to the levels encountered in peaceful uses of ionizing radiations and radioactivity. It is heartening that since Hiroshima, Nagasaki nuclear disaster, the world has been quiet but since early 2000 there has been a fear of certain devices to be used by terrorists, which could lead to panic, and disaster due to dispersal of radioactivity by RDD, IND. Nuclear attack would lead to blast, thermal, initial nuclear radiation, nuclear fall out leading to gamma and neutron dose, dose rates in range from few R, R/h to kR, kR/h, and determinations of k Bq or higher order. Such situations have been visualized at national levels and National Disaster Management Authority NDMA has been established and Disaster Management Act 2005 has come into existence. NDMA has prepared guidelines for Nuclear and radiological emergency management highlighting preparedness, mitigation, response, capacity building, etc. Critical point in all these issues is detection of emergency, quick intimation to the concerned for action in shortest possible time. Upper most requirement by those involved in pursuing action, is radiation sensor based radiation monitors for personnel, area, and to assess contamination due to radioactivity.This presentation briefly describes the Indian scenario in the development of the radiation sensors and the sensor-based radiation monitors. (author)

  10. Evaluation of radiation effects on dental enamel hardness and dental restorative materials

    International Nuclear Information System (INIS)

    Adachi, Lena Katekawa; Saiki, Mitiko; Campos, Tomie Nakakuki

    2000-01-01

    This research presents the results of the microhardness of human dental enamel and of the following dental restorative materials: three dental porcelains - Ceramco II, Finesse and Noritake, and two resin restorative materials - Artglass and Targis, for materials submitted to different times of irradiation at the IEA-R1m nuclear reactor under a thermal neutron flux of 10 12 n cm -2 .s -1 . The results obtained indicated that there is a decrease of the surface microhardness when the enamel is irradiated for 1 h and when dental materials are irradiated for 3 h. However, enamels irradiated for 30 min. did not show significant change of their surface hardness. Therefore, the selection of irradiation time is an important factor to be considered when irradiated teeth or dental materials are used in the investigations of their properties. (author)

  11. Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

    Science.gov (United States)

    Wong, Man Hoi; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

    2018-01-01

    The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.

  12. Effects of gamma radiation on hard dental tissues of albino rats using scanning electron microscope - Part 1

    Science.gov (United States)

    El-Faramawy, Nabil; Ameen, Reham; El-Haddad, Khaled; Maghraby, Ahmed; El-Zainy, Medhat

    2011-12-01

    In the present study, 40 adult male albino rats were used to study the effect of gamma radiation on the hard dental tissues (enamel surface, dentinal tubules and the cementum surface). The rats were irradiated at 0.2, 0.5, 1.0, 2.0, 4.0 and 6.0 Gy gamma doses. The effects of irradiated hard dental tissues samples were investigated using a scanning electron microscope. For doses up to 0.5 Gy, there was no evidence of the existence of cracks on the enamel surface. With 1 Gy irradiation dose, cracks were clearly observed with localized erosive areas. At 2 Gy irradiation dose, the enamel showed morphological alterations as disturbed prismatic and interprismatic areas. An increase in dentinal tubules diameter and a contemporary inter-tubular dentine volume decrease were observed with higher irradiation dose. Concerning cementum, low doses,<0.5 Gy, showed surface irregularities and with increase in the irradiation dose to≥1 Gy, noticeable surface irregularities and erosive areas with decrease in Sharpey's fiber sites were observed. These observations could shed light on the hazardous effects of irradiation fields to the functioning of the human teeth.

  13. Study on efficiency of multi-wire tungsten moderator for slow positron source on SPring-8 hard synchrotron radiation

    International Nuclear Information System (INIS)

    Plokhoi, Vladimir; Kandiev, Yadgar; Samarin, Sergey; Malyshkin, Gennady; Baidin, Grigory; Litvinenko, Igor; Nikitin, Valery

    1999-01-01

    The paper provides results of numeric simulations of in-target positron production process, processes of moderation, thermalization, diffusion, and reemission of positrons in high efficiency multi-wire moderator made of tungsten monocrystalline wire with regular wire spacing. The paper looks into dynamics of slow positrons in the moderator's vacuum gaps taking into account of external fields. The possibility for using multi-wire moderator with non-regular structure - multi-layer w ire felt m oderator is discussed. According to maximal estimate the multi-wire moderators can reach very high efficiency of fast-slow positron transformation ∼ 10 -2 . Using such moderator the intensity of slow positron source on hard synchrotron radiation of Spring-8 can reach the level of ∼10 11 e + /s. (author)

  14. Systematic study of radiation hardness of single crystal CVD diamond material investigated with an Au beam and IBIC method

    Energy Technology Data Exchange (ETDEWEB)

    Pietraszko, Jerzy; Koenig, Wolfgang; Traeger, Michael [GSI, Darmstadt (Germany); Draveny, Antoine; Galatyuk, Tetyana [TU, Darmstadt (Germany); Grilj, Veljko [RBI, Zagreb (Croatia); Collaboration: HADES-Collaboration

    2016-07-01

    For the future high rate CBM experiment at FAIR a radiation hard and fast beam detector is required. The detector has to perform precise T0 measurement (σ<50 ps) and should also offer decent beam monitoring capability. These tasks can be performed by utilizing single-crystal Chemical Vapor Deposition (ScCVD) diamond based detector. A prototype, segmented, detector have been constructed and the properties of this detector have been studied with a high current density beam (about 3.10{sup 6}/s/mm{sup 2}) of 1.23 A GeV Au ions in HADES. The irradiated detector properties have been studied at RBI in Zagreb by means of IBIC method. Details of the design, the intrinsic properties of the detectors and their performance after irradiation with such beam are reported.

  15. Radiation Damage Mechanism in PbWO4 Crystal and Radiation Hardness Quality Control of PWO Scintillators for CMS

    CERN Document Server

    Baccaro, Stefania; Borgia, Bruno; Cavallari, Francesca; Cecilia, Angelica; Dafinei, Ioan; Diemoz, Marcella; Lecoq, Paul; Longo, Egidio; Montecchi, Marco; Organtini, Giovanni; Salvatori, S

    1997-01-01

    The optical damage induced by UV light in PbWO4 crystals is found to be similar to that induced by g radiation. Due to the peculiarities of optical absorption in PbWO4, the damage induced by UV light is a bulk process. This fact has important consequences for the approach to be adopted both for the use of the crystal as scintillator and for the qualification methods foreseen in the Regional Centres of the ECAL CMS Collaboration.

  16. \\title{Development of Radiation Damage Models for Irradiated Silicon Sensors Using TCAD Tools}

    CERN Document Server

    Bhardwaj, Ashutosh; Lalwani, Kavita; Ranjan, Kirti; Printz, Martin; Ranjeet, Ranjeet; Eber, Robert; Eichhorn, Thomas; Peltola, Timo Hannu Tapani

    2014-01-01

    Abstract. During the high luminosity upgrade of the LHC (HL-LHC) the CMS tracking system will face a more intense radiation environment than the present system was designed for. In order to design radiation tolerant silicon sensors for the future CMS tracker upgrade it is fundamental to complement the measurement with device simulation. This will help in both the understanding of the device performance and in the optimization of the design parameters. One of the important ingredients of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this paper we will discuss the development of a radiation damage model by using commercial TCAD packages (Silvaco and Synopsys), which successfully reproduce the recent measurements like leakage current, depletion voltage, interstrip capacitance and interstrip resistance, and provides an insight into the performance of irradiated silicon strip sensors.

  17. Radiation hardness of plastic scintillators for the Tile Calorimeter of the ATLAS detector

    CERN Document Server

    Jivan, Harshna; The ATLAS collaboration

    2014-01-01

    The Tile Calorimeter of the ATLAS detector, is a hadronic calorimeter responsible for detecting hadrons as well as accommodating for the missing transverse energy that result from the p-p collisions within the LHC. Plastic scintillators form an integral component of this calorimeter due to their ability to undergo prompt fluorescence when exposed to ionising particles. The scintillators employed are specifically chosen for their properties of high optical transmission and fast rise and decay time which enables efficient data capture since fast signal pulses can be generated. The main draw-back of plastic scintillators however is their susceptibility to radiation damage. The damage caused by radiation exposure reduces the scintillation light yield and introduces an error into the time-of flight data acquired. During Run 1 of the LHC data taking period, plastic scintillators employed within the GAP region between the Tile Calorimeter’s central and extended barrels sustained a significant amount of damage. Wit...

  18. Radiation hardness of silicon detectors - a challenge from high-energy physics

    CERN Document Server

    Lindström, G; Fretwurst, E

    1999-01-01

    An overview of the radiation-damage-induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given. Problems arising from the expected hadron fluences are summarized and the use of the nonionizing energy loss for normalization of bulk damage is explained. The present knowledge on the deterioration effects caused by irradiation is described leading to an appropriate modeling. Examples are given for a correlation between the change in the macroscopic performance parameters and effects to be seen on the microscopic level by defect analysis. Finally possible ways are out-lined for improving the radiation tolerance of silicon detectors either by operational conditions, process technology or defect engineering.

  19. Radiation interlocks - The choice between conventional hard-wired logic and computer-based systems

    International Nuclear Information System (INIS)

    Crook, K.F.

    1987-01-01

    During the past few years, the use of computers in radiation safety systems has become more widespread. This is not surprising given the ubiquitous nature of computers in the modern technological world. But is a computer a good choice for the central logic element of a personnel safety system? Recent accidents at computer controlled medical accelerators would indicate that extreme care must be exercised if malfunctions are to be avoided. The Department of Energy (DOE) has recently established a sub-committee to formulate recommendations on the use of computers in safety systems for accelerators. This paper reviews the status of the committee's recommendations, and describes radiation protection interlock systems as applied to both accelerators and to irradiation facilities. Comparisons are made between the conventional (relay) approach and designs using computers

  20. Radiation interlocks: The choice between conventional hard-wired logic and computer-based systems

    International Nuclear Information System (INIS)

    Crook, K.F.

    1986-11-01

    During the past few years, the use of computers in radiation safety systems has become more widespread. This is not surprising given the ubiquitous nature of computers in the modern technological world. But is a computer a good choice for the central logic element of a personnel safety system. Recent accidents at computer controlled medical accelerators would indicate that extreme care must be exercised if malfunctions are to be avoided. The Department of Energy has recently established a sub-committee to formulate recommendations on the use of computers in safety systems for accelerators. This paper will review the status of the committee's recommendations, and describe radiation protection interlock systems as applied to both accelerators and to irradiation facilities. Comparisons are made between the conventional relay approach and designs using computers. 6 refs., 6 figs

  1. Sensors of absorbed dose of ionizing radiation based on mosfet

    Directory of Open Access Journals (Sweden)

    Perevertaylo V. L.

    2010-10-01

    Full Text Available The requirements to technology and design of p-channel and n-channel MOS transistors with a thick oxide layer designed for use in the capacity of integral dosimeters of absorbed dose of ionizing radiation are defined. The technology of radiation-sensitive MOS transistors with a thick oxide in the p-channel and n-channel version is created.

  2. Radiation-hard ceramic Resistive Plate Chambers for forward TOF and T0 systems

    Energy Technology Data Exchange (ETDEWEB)

    Akindinov, A., E-mail: Alexander.Akindinov@cern.ch [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Dreyer, J.; Fan, X.; Kämpfer, B. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Kiselev, S. [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Kotte, R.; Garcia, A. Laso [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Malkevich, D. [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Naumann, L. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Nedosekin, A.; Plotnikov, V. [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Stach, D. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Sultanov, R.; Voloshin, K. [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation)

    2017-02-11

    Resistive Plate Chambers with ceramic electrodes are the main candidates for a use in precise multi-channel timing systems operating in high-radiation conditions. We report the latest R&D results on these detectors aimed to meet the requirements of the forward T0 counter at the CBM experiment. RPC design, gas mixture, limits on the bulk resistivity of ceramic electrodes, efficiency, time resolution, counting rate capabilities and ageing test results are presented.

  3. Parallel beam microradiography of dental hard tissue using synchrotron radiation and X-ray image magnification

    International Nuclear Information System (INIS)

    Takagi, S.; Chow, L.C.; Brown, W.E.; Dobbyn, R.C.; Kuriyama, M.

    1984-01-01

    A novel technique utilizing a highly parallel beam of monochromatic synchrotron radiation combined with X-ray image magnification has been used to obtain microradiographs of caries lesions in relatively thick tooth sections. Preliminary results reveal structural features not previously reported. This technique holds the promise of allowing one to follow the structural changes accompanying the formation, destruction and chemical repair of mineralized tissue in real time. (orig.)

  4. Technique for selection of transient radiation-hard junction-isolated integrated circuits

    International Nuclear Information System (INIS)

    Crowley, J.L.; Junga, F.A.; Stultz, T.J.

    1976-01-01

    A technique is presented which demonstrates the feasibility of selecting junction-isolated integrated circuits (JI/ICS) for use in transient radiation environments. The procedure guarantees that all PNPN paths within the integrated circuit are identified and describes the methods used to determine whether the paths represent latchup susceptible structures. Two examples of the latchup analysis are given involving an SSI and an LSI bipolar junction-isolated integrated circuit

  5. The MONOS memory transistor: application in a radiation-hard nonvolatile RAM

    International Nuclear Information System (INIS)

    Brown, W.D.

    1985-01-01

    The MONOS (metal-oxide-nitride-oxide-silicon) device is a prime candidate for use as the nonvolatile memory element in a radiation-hardened RAM (random-access memory). The endurance, retention and radiation properties of MONOS memory transistors have been studied as a function of post nitride deposition annealing. Following the nitride layer deposition, all devices were subjected to an 800 0 C oxidation step and some were then annealed at 900 0 C in nitrogen. The nitrogen anneal produces an increase in memory window size of approximately 40%. The memory window center of the annealed devices is shifted toward more positive voltages and is more stable with endurance cycling. Endurance cycling to 10 9 cycles produces a 20% increase in memory window size and a 60% increase in decay rate. For a radiation total dose of 10 6 rads (Si), the memory window size is essentially unchanged and the decay rate increases approximately 13%. A combination of 10 9 cycles and 10 6 rads (Si) reduces the decades of retention (in sec) from 6.3 to 4.3 for a +- 23-V 16-μsec write/erase pulse. (author)

  6. SIMON [Semi-Intelligent Mobile Observing Navigator] combines radiation hardness with computer power

    International Nuclear Information System (INIS)

    Weber, P.J.; Vanecek, C.W.

    1990-01-01

    SIMON - the Semi-Intelligent Mobile Observing Navigator - has been under development at the US Department of Energy's (DoE's) Savannah River Laboratory for four years. The robot's on-board intelligence units are designed to be radiation-resistant, making it able to function for extended periods within a remotely operated facility. In its current form, SIMON is being developed by the laboratory's Robotics Group for use in the site's production reactors, but it can be adapted for use in any nuclear facility, including commercial reactors. The challenge for Savannah River Laboratory engineers was to eliminate the need for human inspection of certain components. To do this, they designed a robot that could do three things for reactor operators: measure radiation; measure temperature; and provide televised views inside the reactor facility. To be useful, the robot has to be extremely mobile, and its components had to be able to survive months without maintenance in the radiation, temperature and humidity encountered in nuclear facilities. The robot also had to be cost-effective. (author)

  7. Generation of radicals in hard biological tissues under the action of laser radiation

    Science.gov (United States)

    Sviridov, Alexander P.; Bagratashvili, Victor N.; Sobol, Emil N.; Omelchenko, Alexander I.; Lunina, Elena V.; Zhitnev, Yurii N.; Markaryan, Galina L.; Lunin, Valerii V.

    2002-07-01

    The formation of radicals upon UV and IR laser irradiation of some biological tissues and their components was studied by the EPR technique. The radical decay kinetics in body tissue specimens after their irradiation with UV light were described by various models. By the spin trapping technique, it was shown that radicals were not produced during IR laser irradiation of cartilaginous tissue. A change in optical absorption spectra and the dynamics of optical density of cartilaginous tissue, fish scale, and a collagen film under exposure to laser radiation in an air, oxygen, and nitrogen atmosphere was studied.

  8. Radiation hardness evaluation of the commercial 150 nm CMOS process using 60Co source

    International Nuclear Information System (INIS)

    Carna, M; Havranek, M; Hejtmanek, M; Janoska, Z; Marcisovsky, M; Neue, G; Tomasek, L; Vrba, V

    2014-01-01

    We present a study of radiation effects on MOSFET transistors irradiated with a 60 Co source to a total absorbed dose of 1.5 Mrad. The transistor test structures were manufactured using a commercial 150 nm CMOS process and are composed of transistors of different types (NMOS and PMOS), dimensions and insulation from the bulk material by means of deep n-wells. We have observed a degradation of electrical characteristics of both PMOS and NMOS transistors, namely a large increase of the leakage current of the NMOS transistors after irradiation

  9. Performance of light sources and radiation sensors under low gravity realized by parabolic airplane flights

    Science.gov (United States)

    Hirai, Hiroaki; Kitaya, Yoshiaki; Hirai, Takehiro

    A fundamental study was conducted to establish an experimental system for space farming. Since to ensure optimal light for plant cultivation in space is of grave importance, this study examined the performance of light sources and radiation sensors under microgravity conditions created during the parabolic airplane flight. Three kinds of light sources, a halogen bulb, a fluorescent tube, and blue and red LEDs, and ten models of radiation sensors available in the market were used for the experiment. Surface temperature of the light sources, output signals from the radiation sensors, spectroscopic characteristics were measured at the gravity levels of 0.01, 1.0 and 1.8 G for 20 seconds each during parabolic airplane flights. As a result, the performance of the halogen lamp was affected the most by the gravity level among the three light sources. Under the microgravity conditions which do not raise heat convection, the temperature of the halogen lamp rose and the output of the radiation sensors increased. Spectral distributions of the halogen lamp indicated that peak wavelength appeared the highest at the level of 0.01G, which contributed to the increase in light intensity. In the case of red and blue LEDs, which are promising light sources in space farming, the temperature of both LED chips rose but irradiance from red LED increased and that from blue LED decreased under microgravity conditions due to the different thermal characteristics.

  10. Development of radiation hard microstrip detectors for the CBM silicon tracking system

    Energy Technology Data Exchange (ETDEWEB)

    Chatterji, Sudeep [GSI, Darmstadt (Germany)

    2010-07-01

    Radiation damage in Silicon microstrip detectors is of the one main concerns for the development of the Silicon Tracking System (STS) in the planned Compressed Baryonic Matter (CBM) experiment at FAIR. The STS will consist of Double Sided Silicon Strip Detectors (DSSD) having pitch around 60 {mu}m, width 20 {mu}m, stereo angle of {+-}7.5{sup 0} on n and p sides with double metallization on either side making it challenging to fabricate.We are using 3-dimensional TCAD simulation tools from SYNOPSYS to carry out process (using Sentaurus Process) and device (using Sentaurus Device) simulations.We have simulated the impact of radiation damage in DSSDs by changing the effective carrier concentration (N{sub eff}) with fluence using the Hamburg model. The change in minority carrier life time has been taken into account using the Kraners model and the Perugia trap model has been used to simulate the traps. We have also extracted macroscopic parameters like Coupling Capacitance, Interstrip Capacitance (both DC and AC), Interstrip Resistance of DSSDs using Mixed Mode simulation (using SPICE with Sentaurus Device) and studied the variation of these parameters with fluence. The simulation results have been compared to the experimental results. We also simulated transients by passing a Heavy Ion through a DSSD and studied the charge collection performance.

  11. A low power high speed radiation hard serializer for High Energy Physics experiments

    CERN Document Server

    AUTHOR|(CDS)2080243; Marchioro, Alessandro; Ottavi, Marco

    This Ph.D. thesis focuses on the development and the characterization of novel solutions for electronic systems for high-speed data transmission in extremely high radio-active environment (e.g. high energy physics application). The text proposes two alternative full-custom solutions for a fundamental enabling block for a lowpower serial data transmission system, the serializer. This block will find place in a future transceiver conceived for the future upgraded phase of the Large Hadron Collider, or LHC, at CERN. The first solution proposed, called “triple module redundancy”, is based on hardware redundancy, a well-known solution, to obtain protection against the temporary malfunctioning induced by radiation. In the second case a new architecture, called “code protected”, is proposed. This architecture takes advantage of the error correction code present in the data word to obtain radiation robustness on data and some parts of the control logic and to further reduce the power consumption. A test chip ...

  12. Technology development of p-type microstrip detectors with radiation hard p-spray isolation

    International Nuclear Information System (INIS)

    Pellegrini, G.; Fleta, C.; Campabadal, F.; Diez, S.; Lozano, M.; Rafi, J.M.; Ullan, M.

    2006-01-01

    A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. The best technological options for the p-spray implant were found by using a simulation software package and dedicated calibration runs. Using the optimized technology, detectors have been fabricated in the Clean Room facility of CNM-IMB, and characterized by reverse current and capacitance measurements before and after irradiation. The average full depletion voltage measured on the non-irradiated detectors was V FD =41±3 V, while the leakage current density for the microstrip devices at V FD +20 V was 400 nA/cm 2

  13. Ionization processes in the Fe 27 region of hot iron plasma in the field of hard gamma radiation

    International Nuclear Information System (INIS)

    Illarionov, A.F.

    1989-01-01

    A highly ionized hot plasma of an iron 26 56 Fe-type heavy element in the field of hard ionizing gamma-ray radiation is considered. The processes of ionization and recombination are discussed for a plasma consisting of the fully ionized Fe 27 and the hydrogen-like Fe 26 ions of iron in the case of large optical depth of the plasma with respect to the photoionization by gamma-ray quanta. The self-ionization process of a hot plasma with the temperature kT ≅ I (I being the ionization potential), due to the production of the own ionizing gamma-ray quanta, by the free-free (ff) and recombination (fb) radiation mechanisms, is investigated. It is noted that in the stationary situation the process of self-ionization of a hot plasma imposes the restriction upon the plasma temperature, kT<1.5 I. It is shown that the ionization of heavy-ion plasma by the impact of thermal electrons is dominating over the processes of ff- and fb-selfionization of plasma only by the large concentration of hydrogen-like iron at the periphery of the region of fully ionized iron Fe 27

  14. Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2010-01-01

    1.1 This practice covers recommended procedures for the use of dosimeters, such as thermoluminescent dosimeters (TLD's), to determine the absorbed dose in a region of interest within an electronic device irradiated using a Co-60 source. Co-60 sources are commonly used for the absorbed dose testing of silicon electronic devices. Note 1—This absorbed-dose testing is sometimes called “total dose testing” to distinguish it from “dose rate testing.” Note 2—The effects of ionizing radiation on some types of electronic devices may depend on both the absorbed dose and the absorbed dose rate; that is, the effects may be different if the device is irradiated to the same absorbed-dose level at different absorbed-dose rates. Absorbed-dose rate effects are not covered in this practice but should be considered in radiation hardness testing. 1.2 The principal potential error for the measurement of absorbed dose in electronic devices arises from non-equilibrium energy deposition effects in the vicinity o...

  15. Effects of alpha radiation on hardness and toughness of the borosilicate glass applied to radioactive wastes immobilization

    International Nuclear Information System (INIS)

    Prado, Miguel Oscar; Bernasconi, Norma B. Messi de; Bevilacqua, Arturo Miguel; Arribere, Maria Angelica; Heredia, Arturo D.; Sanfilippo, Miguel

    1999-01-01

    Borosilicate german glass SG7 samples, obtained by frit sintering, were irradiated with different fluences of thermal neutrons in the nucleus of a nuclear reactor. The nuclear reaction 10 B(n,α) 7 Li, where the 10 B isotope is one of the natural glass components, was used to generate alpha particles throughout the glass volume. The maximum alpha disintegration per unit volume achieved was equivalent to that accumulated in a borosilicate glass with nuclear wastes after 3.8 million years. Through Vickers indentations values for microhardness, stress for 50% fracture probability (Weibull statistics) and estimation of the toughness were obtained as a function of alpha radiation dose. Two counterbalanced effects were found: that due to the disorder created by the alpha particles in the glass and that due to the annealing during irradiation (temperature below 240 deg C). Considering the alpha radiation effect, glasses tend decrease Vickers hardness, and to increase thr 50% fracture probability stress with the dose increase. (author)

  16. Miniaturized radiation detector with custom synthesized diamond crystal as sensor

    International Nuclear Information System (INIS)

    Grobbelaar, J.H.; Burns, R.C.; Nam, T.L.; Keddy, R.J.

    1991-01-01

    A miniaturized detector consisting of three custom built hybrid circuits, a counter and a miniature high voltage power supply was designed to operate with custom synthesized Type Ib diamond crystals as sensors. Thick-film technology was incorporated in the circuit design. With a crystal having a volume of approximately 10 mm 3 and containing approximately 60 ppm paramagnetic nitrogen, the detector was capable of measuring γ-ray dose-rates as low as 7.5 μ Gy h -1 . The response characteristic was linear up to 1 cGy h -1 . (orig.)

  17. Multi-sensor radiation detection, imaging, and fusion

    Energy Technology Data Exchange (ETDEWEB)

    Vetter, Kai [Department of Nuclear Engineering, University of California, Berkeley, CA 94720 (United States); Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2016-01-01

    Glenn Knoll was one of the leaders in the field of radiation detection and measurements and shaped this field through his outstanding scientific and technical contributions, as a teacher, his personality, and his textbook. His Radiation Detection and Measurement book guided me in my studies and is now the textbook in my classes in the Department of Nuclear Engineering at UC Berkeley. In the spirit of Glenn, I will provide an overview of our activities at the Berkeley Applied Nuclear Physics program reflecting some of the breadth of radiation detection technologies and their applications ranging from fundamental studies in physics to biomedical imaging and to nuclear security. I will conclude with a discussion of our Berkeley Radwatch and Resilient Communities activities as a result of the events at the Dai-ichi nuclear power plant in Fukushima, Japan more than 4 years ago. - Highlights: • .Electron-tracking based gamma-ray momentum reconstruction. • .3D volumetric and 3D scene fusion gamma-ray imaging. • .Nuclear Street View integrates and associates nuclear radiation features with specific objects in the environment. • Institute for Resilient Communities combines science, education, and communities to minimize impact of disastrous events.

  18. Preparation and characterisation of radiation hard PbWO4 crystal scintillator

    International Nuclear Information System (INIS)

    Sabharwal, S.C.; Desai, D.G.; Sangeeta; Karandikar, S.C.; Chauhan, A.K.; Sangiri, A.K.; Keshwani, K.S.; Ahuja, M.N.

    1996-01-01

    The selective loss of one of the crystal constituents is found to be responsible for the yellowish coloration of PbWO 4 crystals. However, using the already pulled crystals as the starting charge for the subsequent growth, colorless crystals can be grown. The crystals exhibiting excellent transmission characteristics have been grown employing a low temperature gradient, a moderate rotation rate of 15 rpm and a pull speed of 1 mm/h. The colored crystals show some radiation damage on gamma irradiation, while the colorless ones remain unaffected even for irradiation doses as high as 10 Mrad. Both the types of crystals show the presence of weak thermoluminescence (TL) emission when high irradiation doses (similar 10 Mrad) are given. Only one TL glow peak is obtained in both the cases but the peak temperatures are different. The emission centers responsible for the TL emission are found to be the ones which give rise to the scintillation emission in the crystal. (orig.)

  19. Radiation hardness tests with a demonstrator preamplifier circuit manufactured in silicon on sapphire (SOS) VLSI technology

    International Nuclear Information System (INIS)

    Bingefors, N.; Ekeloef, T.; Eriksson, C.; Paulsson, M.; Moerk, G.; Sjoelund, A.

    1992-01-01

    Samples of the preamplifier circuit, as well as of separate n and p channel transistors of the type contained in the circuit, were irradiated with gammas from a 60 Co source up to an integrated dose of 3 Mrad (30 kGy). The VLSI manufacturing technology used is the SOS4 process of ABB Hafo. A first analysis of the tests shows that the performance of the amplifier remains practically unaffected by the radiation for total doses up to 1 Mrad. At higher doses up to 3 Mrad the circuit amplification factor decreases by a factor between 4 and 5 whereas the output noise level remains unchanged. It is argued that it may be possible to reduce the decrease in amplification factor in future by optimizing the amplifier circuit design further. (orig.)

  20. LHCb: The Performance and Radiation Hardness of the Outer Tracker Detector for LHCb

    CERN Multimedia

    Färber, C

    2012-01-01

    The LHC bexperiment is designed to study B-decays at the LHC. It is crucial to accurately and efficiently detect the charged decay particles in the high-density particle environment of the LHC. For this, the Outer Tracker (OT) has been constructed, consisting of 53,760 straw tubes, covering in total an area of 360 m2 of double layers. At the time of the conference, the detector will have operated under nominal LHC conditions for a period of about 2 years, corresponding to an integrated luminosity of approximately 2.5 fb$^{-1}$ . The performance of the detector will be discussed in terms of high voltage stability, noise rate, single hit efficiency and resolution. Finally, first results on the radiation tolerance of this sensitive gas detector will be shown, after having received a total dose corresponding to about 100 mC/cm in the hottest region.

  1. Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

    International Nuclear Information System (INIS)

    Moll, M.; Fretwurst, E.; Lindstroem, G.

    2000-01-01

    We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2x10 14 to 9x10 17 cm -3 have been irradiated with fast neutrons up to a fluence of 2x10 15 cm -2 . Our main interest focused on the so-called stable damage component in the change of the effective doping concentration being of prime importance for the application of silicon detectors in high-energy physics experiments. We demonstrate, that with a high oxygen enrichment the donor removal is appreciably reduced, reaching a value of only 10% of the initial doping concentration for [O i ]=9x10 17 cm -3 , while for normal detector grade material with [O i ] below 5x10 16 cm -3 that value is 60-90%. Furthermore, we show that the fluence proportional introduction of stable acceptors is independent of the oxygen concentration with an averaged introduction rate of (1.49±0.03)x10 -2 cm -1 . Only one material was found exhibiting a significantly smaller value of about 0.6x10 -2 cm -1 and thus indicating the possibility to suppress the radiation-induced acceptor creation by material modification. Finally, we show that the experimental findings disagree in several important aspects with predictions made by microscopic defect kinetics models, leaving the physical background of some of the measured data as an open question

  2. Beam test of novel n-in-p strip sensors for high radiation environment

    Science.gov (United States)

    Kubota, T.; Kishida, T.; Jinnouchi, O.; Ikegami, Y.; Unno, Y.; Terada, S.; Mitsui, S.; Tamii, A.; Aoi, T.; Hanagaki, K.; Hara, K.; Kimura, N.; Takashima, R.; Takubo, Y.; Tojo, J.; Nagai, K.; Nakano, I.; Yorita, K.

    2013-12-01

    Highly radiation tolerant n-in-p strip sensors have been developed for the high-luminosity LHC (HL-LHC). This paper reports the results of measurements with 392 MeV kinetic energy proton beam at RCNP in December 2011. The data was taken with a new DAQ system consisting of an universal read-out board ‘SEABAS’ and beam tracking telescopes whose spacial resolution is better than 5 μm. The aim of this beam test is to evaluate the new 1 cm×1 cm n-in-p miniature sensors before and after 1015 neq cm-2 irradiation. The median charge of un-irradiated sensor is 6.2 fC at full depletion voltage, while the median charge after 1015 neq cm-2 irradiation of the sensor is 4.2 fC. The novel Punch-Through-Protection (PTP) has been implemented in these sensors. The length of active region of the sensor around PTP is observed to be decreased by 12 μm in the irradiated sensors at 1015 neq cm-2.

  3. A Radiation Hard Multi-Channel Digitizer ASIC for Operation in the Harsh Jovian Environment

    Science.gov (United States)

    Aslam, Shahid; Aslam, S.; Akturk, A.; Quilligan, G.

    2011-01-01

    ultimately impact the surface of Europa after the mission is completed. The current JEO mission concept includes a range of instruments on the payload, to monitor dynamic phenomena (such as Io's volcanoes and Jupiters atmosphere), map the Jovian magnetosphere and its interactions with the Galilean satellites, and characterize water oceans beneath the ice shells of Europa and Ganymede. The payload includes a low mass (3.7 Kg) and low power (ASIC that resides very close to the thermopile linear array outputs. Both the thermopile array and the MCD ASIC will need to show full functionality within the harsh Jovian radiation environment, operating at cryogenic temperatures, typically 150 K to 170 K. In the following, a radiation mitigation strategy together with a low risk Radiation-Hardened-By-Design (RHBD) methodology using commercial foundry processes is given for the design and manufacture of a MCD ASIC that will meet this challenge.

  4. Electron cascades in sensors for optical detection of ionizing radiation

    International Nuclear Information System (INIS)

    London, Richard A.; Lowry, Mark E.; Vernon, Stephen P.; Stewart, Richard E.

    2013-01-01

    A new class of high-speed detectors, called RadOptic detectors, measures ionizing radiation incident on a transparent semiconductor by sensing changes in the refractive index with an optical probe beam. We describe the role of radiation-initiated electron cascades in setting the sensitivity and the spatial and temporal resolution of RadOptic detectors. We model electron cascades with both analytical and Monte Carlo computational methods. We find that the timescale for the development of an electron cascade is less than of order 100 fs and is not expected to affect the time response of a detector. The characteristic size of the electron cloud is typically less than 2 μm, enabling high spatial resolution in imaging systems. The electron-hole pair density created by single x-rays is much smaller than the saturation density and, therefore, single events should not saturate the detector

  5. The development of gamma energy identify algorithm for compact radiation sensors using stepwise refinement technique

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hyun Jun [Div. of Radiation Regulation, Korea Institute of Nuclear Safety, Daejeon (Korea, Republic of); Kim, Ye Won; Kim, Hyun Duk; Cho, Gyu Seong [Dept. of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of); Yi, Yun [Dept. of of Electronics and Information Engineering, Korea University, Seoul (Korea, Republic of)

    2017-06-15

    A gamma energy identifying algorithm using spectral decomposition combined with smoothing method was suggested to confirm the existence of the artificial radio isotopes. The algorithm is composed by original pattern recognition method and smoothing method to enhance the performance to identify gamma energy of radiation sensors that have low energy resolution. The gamma energy identifying algorithm for the compact radiation sensor is a three-step of refinement process. Firstly, the magnitude set is calculated by the original spectral decomposition. Secondly, the magnitude of modeling error in the magnitude set is reduced by the smoothing method. Thirdly, the expected gamma energy is finally decided based on the enhanced magnitude set as a result of the spectral decomposition with the smoothing method. The algorithm was optimized for the designed radiation sensor composed of a CsI (Tl) scintillator and a silicon pin diode. The two performance parameters used to estimate the algorithm are the accuracy of expected gamma energy and the number of repeated calculations. The original gamma energy was accurately identified with the single energy of gamma radiation by adapting this modeling error reduction method. Also the average error decreased by half with the multi energies of gamma radiation in comparison to the original spectral decomposition. In addition, the number of repeated calculations also decreased by half even in low fluence conditions under 104 (/0.09 cm{sup 2} of the scintillator surface). Through the development of this algorithm, we have confirmed the possibility of developing a product that can identify artificial radionuclides nearby using inexpensive radiation sensors that are easy to use by the public. Therefore, it can contribute to reduce the anxiety of the public exposure by determining the presence of artificial radionuclides in the vicinity.

  6. The GBTIA, a 5 Gbit/s Radiation-Hard Optical Receiver for the SLHC Upgrades

    CERN Document Server

    Menouni, M; Moreira, P

    2009-01-01

    The GigaBit Transceiver (GBT) is a high-speed optical transmission system currently under development for HEP applications. This system will implement bi-directional optical links to be used in the radiation environment of the Super LHC. The GigaBit Transimpedance Amplifier (GBTIA) is the front-end optical receiver of the GBT chip set. This paper presents the GBTIA, a 5 Gbit/s, fully differential, and highly sensitive optical receiver designed and implemented in a commercial 0.13 μm CMOS process. When connected to a PIN-diode, the GBTIA displays a sensitivity better than −19 dBm for a BER of 10−12. The differential output across an external 50 Ω load remains constant at 400 mVpp even for signals near the sensitivity limit. The chip achieves an overall transimpedance gain of 20 kΩ with a measured bandwidth of 4 GHz. The total power consumption of the chip is less than 120 mW and the chip die size is 0.75 mm x 1.25 mm. Irradiation testing of the chip shows no performance degradation after a dose rate of ...

  7. Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

    CERN Document Server

    Moll, Michael; Lindström, G

    2000-01-01

    We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2*10/sup 14/ to 9*10/sup 17/ cm/sup -3/ have been irradiated with fast neutrons up to a fluence of 2*10/sup 15/ cm/sup -2/. Our main interest focused on the so-called stable damage component in the change of the effective doping concentration being of prime importance for the application of silicon detectors in high-energy physics experiments. We demonstrate, that with a high oxygen enrichment the donor removal is appreciably reduced, reaching a value of only 10601130f the initial doping concentration for [O/sub i/]=9*10/sup 17/ cm/sup -3/, while for normal detector grade material with [O/sub i/] below 5*10/sup 16/ cm /sup -3/ that value is 60-90Furthermore, we show that the fluence proportional introduction of stable acceptors is independent of the oxygen concentratio...

  8. Evaluation of the Detection Efficiency of LYSO Scintillator in the Fiber-Optic Radiation Sensor

    Directory of Open Access Journals (Sweden)

    Chan Hee Park

    2014-01-01

    Full Text Available The aim of this study was to develop and evaluate fiber-optic sensors for the remote detection of gamma rays in areas that are difficult to access, such as a spent fuel pool. The fiber-optic sensor consists of a light-generating probe, such as scintillators for radiation detection, plastic optical fibers, and light-measuring devices, such as PMT. The (Lu,Y2SiO5:Ce(LYSO:Ce scintillator was chosen as the light-generating probe. The (Lu,Y2SiO5:Ce(LYSO:Ce scintillator has higher scintillation efficiency than the others and transmits light well through an optical fiber because its refraction index is similar to the refractive index of the optical fiber. The fiber-optic radiation sensor using the (Lu,Y2SiO5:Ce(LYSO:Ce scintillator was evaluated in terms of the detection efficiency and reproducibility for examining its applicability as a radiation sensor.

  9. Development and application of the analyzer-based imaging technique with hard synchrotron radiation

    International Nuclear Information System (INIS)

    Coan, P.

    2006-07-01

    The objective of this thesis is twofold: from one side the application of the analyser-based X-ray phase contrast imaging to study cartilage, bone and bone implants using ESRF synchrotron radiation sources and on the other to contribute to the development of the phase contrast techniques from the theoretical and experimental point of view. Several human samples have been studied in vitro using the analyser based imaging (ABI) technique. Examination included projection and computed tomography imaging and 3-dimensional volume rendering of hip, big toe and ankle articular joints. X-ray ABI images have been critically compared with those obtained with conventional techniques, including radiography, computed tomography, ultrasound, magnetic resonance and histology, the latter taken as gold standard. Results show that only ABI imaging was able to either visualize or correctly estimate the early pathological status of the cartilage. The status of the bone ingrowth in sheep implants have also been examined in vitro: ABI images permitted to correctly distinguish between good and incomplete bone healing. Pioneering in-vivo ABI on guinea pigs were also successfully performed, confirming the possible use of the technique to follow up the progression of joint diseases, the bone/metal ingrowth and the efficacy of drugs treatments. As part of the development of the phase contrast techniques, two objectives have been reached. First, it has been experimentally demonstrated for the first time that the ABI and the propagation based imaging (PBI) can be combined to create images with original features (hybrid imaging, HI). Secondly, it has been proposed and experimentally tested a new simplified set-up capable to produce images with properties similar to those obtained with the ABI technique or HI. Finally, both the ABI and the HI have been theoretically studied with an innovative, wave-based simulation program, which was able to correctly reproduce experimental results. (author)

  10. ARTIST: advanced radiation-tolerant information and sensor system for teleoperation

    International Nuclear Information System (INIS)

    Schmidt, D.; Pathe, V.; Ostertag, M.; Dittrich, F.; Dumbreck, A.; Sirat, G.; Katzouraki, M.

    1993-01-01

    ARTIST integrates a stereoscopic camera and a rangefinder as sensor package into a high-precision pan-and-tilt head and represents the recorded data in a clear and comprehensive way for telemanipulation and control tasks as well as for remote driving. The sensors as well as the pan-and-tilt head are radiation-tolerant so they can be used in nuclear environments. The pan-and-tilt head and work station are completely configured and developed with the emphasis on multisensor integration, real-time video processing and graphical position representation. An efficient man-machine-interface appropriate software is included. (author)

  11. Optical fiber radiation sensors: first in vivo measurements during orbital irradiation

    International Nuclear Information System (INIS)

    Gripp, S.; Bannach, B.; Muskalla, K.; Haesing, F.; Bueker, H.; Schmitt, G.

    1995-01-01

    Purpose: To investigate the applicability of doped optical fiber radiation sensors in clinical dosimetry. Methods: Ionizing radiation causes a dose depending discoloring in silica. When proper impurities (doping agents) are added, the radiation sensitivity may be increased to a range suited for clinical dosimetry. We performed in-vivo-measurements using a lead doped silica fiber (d TM ) in comparison to thermoluminescence detectors (TLDs). Results: The scattered radiation is easily detected with this sensor fiber. In contrast to TLDs the dose and doserate values are obtained immediately and setup errors can be recognized before irradiation is completed. The SD clearly depends on setup modifications due to the extent of disease. Other doping agents (GeP) provide better tissue equivalence and less energy dependence. Conclusions: Optical fibers are suitable for in vivo dosimetry purposes. Fiber sensors provide real time dose values, and the readout procedure is much easier compared to TLDs. These features may gain significance in quality assurance, conformal therapy, and intraoperative radiotherapy (IORT)

  12. 2-D FEM Simulation of Propagation and Radiation of Leaky Lamb Wave in a Plate-Type Ultrasonic Waveguide Sensor

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sang-Jin; Kim, Hoe-Woong; Joo, Young-Sang; Kim, Sung-Kyun; Kim, Jong-Bum [KAERI, Daejeon (Korea, Republic of)

    2016-05-15

    This paper introduces the 2-D FEM simulation of the propagation and radiation of the leaky Lamb wave in and from a plate-type ultrasonic waveguide sensor conducted for the radiation beam profile analysis. The FEM simulations are performed with three different excitation frequencies and the radiation beam profiles obtained from FEM simulations are compared with those obtained from corresponding experiments. This paper deals with the 2-D FEM simulation of the propagation and radiation of the leaky Lamb wave in and from a plate-type ultrasonic waveguide sensor conducted to analyze the radiation beam profiles. The radiation beam profile results obtained from the FEM simulation show good agreement with the ones obtained from the experiment. This result will be utilized to improve the performance of the developed waveguide sensor. The quality of the visualized image is mainly affected by beam profile characteristics of the leaky wave radiated from the waveguide sensor. However, the relationships between the radiation beam profile and many parameters of the waveguide sensor are not fully revealed yet. Therefore, further parametric studies are necessary to improve the performance of the sensor and the finite element method (FEM) is one of the most effective tools for the parametric study.

  13. Evaluation of radiation tolerance of FETs used for Astro-E2 hard X-ray detector (HXD-II)

    International Nuclear Information System (INIS)

    Itoh, Takeshi; Niko, Hisako; Kokubun, Motohide; Makishima, Kazuo; Kawaharada, Madoka; Takahashi, Isao; Miyasaka, Hiromasa

    2005-01-01

    We evaluated the radiation tolerance of three types of metal-can MOS Field Effect Transistors (FETs). They are candidates for flight electronics of the Hard X-ray Detector (HXD-II) experiment which is onboard the cosmic X-ray satellite Astro-E2 scheduled for launch in 2005. We irradiated FETs with a Co60γ-ray source under several different experimental conditions, and measured changes in their I-V characteristic curves. After a 10krad irradiation during which the gate voltage is set at 0V, all types showed a decrease in the switching voltage by ∼0.2-0.4V. In addition, the gate conductance increased under some irradiation conditions. These experimental results may be explained in terms of trapped charges and boundary levels in the oxide layer beneath the gate electrode. We have confirmed that at least two types of FETs can be used in our satellite-borne experiment, one as relay-driving FETs and the other in TTL-ECL conversion circuits

  14. Radioactivity measurement of radioactive contaminated soil by using a fiber-optic radiation sensor

    Science.gov (United States)

    Joo, Hanyoung; Kim, Rinah; Moon, Joo Hyun

    2016-06-01

    A fiber-optic radiation sensor (FORS) was developed to measure the gamma radiation from radioactive contaminated soil. The FORS was fabricated using an inorganic scintillator (Lu,Y)2SiO5:Ce (LYSO:Ce), a mixture of epoxy resin and hardener, aluminum foil, and a plastic optical fiber. Before its real application, the FORS was tested to determine if it performed adequately. The test result showed that the measurements by the FORS adequately followed the theoretically estimated values. Then, the FORS was applied to measure the gamma radiation from radioactive contaminated soil. For comparison, a commercial radiation detector was also applied to measure the same soil samples. The measurement data were analyzed by using a statistical parameter, the critical level to determine if net radioactivity statistically different from background was present in the soil sample. The analysis showed that the soil sample had radioactivity distinguishable from background.

  15. Methodology and measurement of radiation interception by quantum sensor of the oil palm plantation

    Directory of Open Access Journals (Sweden)

    Johari Endan

    2005-09-01

    Full Text Available Interception of light by a canopy is a fundamental requirement for crop growth and is important for biomass production and plant growth modeling. Solar radiation is an important parameter for photosynthesis and evapotranspiration. These two phenomena are dependent not only on the intensity of radiation but also on the distribution of intercepted radiation within the canopy. In this study, two operational methods for estimating the amount of photosynthetically active radiation (PAR intercepted by a canopy of the oil palm are presented. LICOR radiation sensors, model LI-190SA and model LI-191SA were used for photosynthetically active radiation (PAR measurement above and below the canopy. We developed two methods, namely "Triangular" method and "Circular" method for PAR measurement. Results show that both methods were suitable for oil palm PAR measurement. The triangular method is recommended for PAR measurements with respect to the whole plantation and the circular method is recommended for specific purposes, such as growth analysis or growth modeling of the oil palm. However, practical considerations such as equipment availability, purpose of the measurement, age of the palm, and the number of measuring points to be sampled should be taken into account in the selection of a suitable method for a particular study. The results indicate that the interception of radiation was affected by spatial variation, and the radiation transmission decreased towards the frond tips.

  16. Conceptual design of a versatile radiation tolerant integrated signal conditioning circuit for resistive sensors

    Energy Technology Data Exchange (ETDEWEB)

    Leroux, P. [Katholieke Hogeschool Kempen, Kleinhoefstraat 4, B-2440 Geel (Belgium); Katholieke Universiteit Leuven, Dept. ESAT-MICAS, Kasteelpark Arenberg 10, B-3001 Heverlee (Belgium); SCK-CEN, Belgian Nuclear Research Centre, Boeretang 200, B-2400 Mol (Belgium); Sterckx, J. [Katholieke Hogeschool Kempen, Kleinhoefstraat 4, B-2440 Geel (Belgium); Van Uffelen, M.; Damiani, C. [Fusion 4 Energy, Ed. B3, c/Josep, no 2, Torres Diagonal Litoral, 08019 Barcelona (Spain)

    2011-07-01

    This paper presents the design of a radiation tolerant configurable discrete time CMOS signal conditioning circuit for use with resistive sensors like strain gauge pressure sensors. The circuit is intended to be used for remote handling in harsh environments in the International Thermonuclear Experimental fusion Reactor (ITER). The design features a 5 V differential preamplifier using a Correlated Double Sampling (CDS) architecture at a sample rate of 20 kHz and a 24 V discrete time post amplifier. The gain is digitally controllable between 27 and 400 in the preamplifier and between 1 and 8 in the post amplifier. The nominal input referred noise voltage is only 8.5 {mu}V while consuming only 1 mW. The circuit has a simulated radiation tolerance of more than 1 MGy. (authors)

  17. Radiation Damage Modeling for 3D Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Wallangen, Veronica; The ATLAS collaboration

    2017-01-01

    Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This poster presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS Detector.

  18. Radiation effects on optical components of a laser radar sensor designed for remote metrology in ITER

    International Nuclear Information System (INIS)

    Menon, M.M.; Grann, E.B.; Slotwinski, A.

    1997-09-01

    A frequency modulated laser radar is being developed for in-vessel metrology and viewing of plasma-facing surfaces. Some optical components of this sensor must withstand intense gamma radiation (3 x 10 6 rad/h) during operation. The authors have tested the effect of radiation on a silica core polarization maintaining optical fiber and on TeO 2 crystals at doses up to ∼ 10 9 rad. Additional tests are planned for evaluating the performance of a complete acousto-optic (AO) scanning device. The progress made in these tests is also described

  19. Object-Oriented Hierarchy Radiation Consistency for Different Temporal and Different Sensor Images

    Directory of Open Access Journals (Sweden)

    Nan Su

    2018-02-01

    Full Text Available In the paper, we propose a novel object-oriented hierarchy radiation consistency method for dense matching of different temporal and different sensor data in the 3D reconstruction. For different temporal images, our illumination consistency method is proposed to solve both the illumination uniformity for a single image and the relative illumination normalization for image pairs. Especially in the relative illumination normalization step, singular value equalization and linear relationship of the invariant pixels is combined used for the initial global illumination normalization and the object-oriented refined illumination normalization in detail, respectively. For different sensor images, we propose the union group sparse method, which is based on improving the original group sparse model. The different sensor images are set to a similar smoothness level by the same threshold of singular value from the union group matrix. Our method comprehensively considered the influence factors on the dense matching of the different temporal and different sensor stereoscopic image pairs to simultaneously improve the illumination consistency and the smoothness consistency. The radiation consistency experimental results verify the effectiveness and superiority of the proposed method by comparing two other methods. Moreover, in the dense matching experiment of the mixed stereoscopic image pairs, our method has more advantages for objects in the urban area.

  20. SU-E-T-258: Development of a New Patient Set-Up Monitoring System Using Force Sensing Resistor (FSR) Sensor for the Radiation Therapy

    International Nuclear Information System (INIS)

    Cho, M; Kim, T; Kang, S; Kim, D; Kim, K; Shin, D; Suh, T

    2015-01-01

    Purpose: The purpose of this work is to develop a new patient set-up monitoring system using force sensing resistor (FSR) sensors that can confirm pressure of contact surface and evaluate its feasibility. Methods: In this study, we focused on develop the patient set-up monitoring system to compensate for the limitation of existing optical based monitoring system, so the developed system can inform motion in the radiation therapy. The set-up monitoring system was designed consisting of sensor units (FSR sensor), signal conditioning devices (USB cable/interface electronics), a control PC, and a developed analysis software. The sensor unit was made by attaching FSR sensor and dispersing pressure sponge to prevent error which is caused by concentrating specific point. Measured signal from the FSR sensor was sampled to arduino mega 2560 microcontroller, transferred to control PC by using serial communication. The measured data went through normalization process. The normalized data was displayed through the developed graphic user interface (GUI) software. The software was designed to display a single sensor unit intensity (maximum 16 sensors) and display 2D pressure distribution (using 16 sensors) according to the purpose. Results: Changes of pressure value according to motion was confirmed by the developed set-up monitoring system. Very small movement such as little physical change in appearance can be confirmed using a single unit and using 2D pressure distribution. Also, the set-up monitoring system can observe in real time. Conclusion: In this study, we developed the new set-up monitoring system using FSR sensor. Especially, we expect that the new set-up monitoring system is suitable for motion monitoring of blind area that is hard to confirm existing optical system and compensate existing optical based monitoring system. As a further study, an integrated system will be constructed through correlation of existing optical monitoring system. This work was supported by

  1. SU-E-T-258: Development of a New Patient Set-Up Monitoring System Using Force Sensing Resistor (FSR) Sensor for the Radiation Therapy

    Energy Technology Data Exchange (ETDEWEB)

    Cho, M; Kim, T; Kang, S; Kim, D; Kim, K; Shin, D; Suh, T [The Catholic University of Korea College of Medicine, Seoul (Korea, Republic of)

    2015-06-15

    Purpose: The purpose of this work is to develop a new patient set-up monitoring system using force sensing resistor (FSR) sensors that can confirm pressure of contact surface and evaluate its feasibility. Methods: In this study, we focused on develop the patient set-up monitoring system to compensate for the limitation of existing optical based monitoring system, so the developed system can inform motion in the radiation therapy. The set-up monitoring system was designed consisting of sensor units (FSR sensor), signal conditioning devices (USB cable/interface electronics), a control PC, and a developed analysis software. The sensor unit was made by attaching FSR sensor and dispersing pressure sponge to prevent error which is caused by concentrating specific point. Measured signal from the FSR sensor was sampled to arduino mega 2560 microcontroller, transferred to control PC by using serial communication. The measured data went through normalization process. The normalized data was displayed through the developed graphic user interface (GUI) software. The software was designed to display a single sensor unit intensity (maximum 16 sensors) and display 2D pressure distribution (using 16 sensors) according to the purpose. Results: Changes of pressure value according to motion was confirmed by the developed set-up monitoring system. Very small movement such as little physical change in appearance can be confirmed using a single unit and using 2D pressure distribution. Also, the set-up monitoring system can observe in real time. Conclusion: In this study, we developed the new set-up monitoring system using FSR sensor. Especially, we expect that the new set-up monitoring system is suitable for motion monitoring of blind area that is hard to confirm existing optical system and compensate existing optical based monitoring system. As a further study, an integrated system will be constructed through correlation of existing optical monitoring system. This work was supported by

  2. Hybrid emergency radiation detection: a wireless sensor network application for consequence management of a radiological release

    Science.gov (United States)

    Kyker, Ronald D.; Berry, Nina; Stark, Doug; Nachtigal, Noel; Kershaw, Chris

    2004-08-01

    The Hybrid Emergency Radiation Detection (HERD) system is a rapidly deployable ad-hoc wireless sensor network for monitoring the radiation hazard associated with a radiation release. The system is designed for low power, small size, low cost, and rapid deployment in order to provide early notification and minimize exposure. The many design tradeoffs, decisions, and challenges in the implementation of this wireless sensor network design will be presented and compared to the commercial systems available. Our research in a scaleable modular architectural highlights the need and implementation of a system level approach that provides flexibility and adaptability for a variety of applications. This approach seeks to minimize power, provide mission specific specialization, and provide the capability to upgrade the system with the most recent technology advancements by encapsulation and modularity. The implementation of a low power, widely available Real Time Operating System (RTOS) for multitasking with an improvement in code maintenance, portability, and reuse will be presented. Finally future design enhancements technology trends affecting wireless sensor networks will be presented.

  3. Influence of ionizing radiation on optical hardness of transparent dielectrics to action of huge intensity laser light

    International Nuclear Information System (INIS)

    Bedilov, M.R.; Khalilov, R.A.

    2006-01-01

    Full text: This paper presents results of researches of optical hardness of γ -irradiated with doze 10 4 - 10 9 rad alkali-silicate (K, GLS, LGS) and quartz (KU, KV, KSG) glasses against influence of radiation neodymium laser with intensity q = 0,1-1000 GWt/cm 2 . It is observed, that the laser produces damage of surface and volume of investigated glasses before and after γ-irradiation. This damage has threshold character and is always accompanied by a bright luminescence of plasma. Definition of threshold values of intensity superficial q s and volumetric q d laser produced damage was made by the complex method - fixing the moment of damage of transparent dielectric by simultaneous registration of the laser impulse which has passed through plasma of breakdown, mass-charge spectrum of ions of plasma and measuring the energy falling on the glass, and of penetrated and mirror-image radiations; and by optical microscopy. This method of research of influence γ-induced in transparent dielectric radiating defects on its optical stability against influence of laser radiation allows not only to define values q s and q d in the investigated interval of dozes, but also to investigate in details physical phenomena taking place in this process of interaction. On the basis of the received data quantitative characteristics of optical durability of the investigated glasses on wave length of λ1,06 microns depending on dozes of γ-irradiation and intensity of laser radiation are made. Doze dependences of charge and power spectra and quantitative characteristics of ions of plasma of breakdown were investigated at q≥ q s . In the investigated interval of dozes of γ- irradiation and intensity of laser radiation by a method of optical microscopy the morphology of occurring laser damage as surfaces, and volume of glass is also studied. It is found, that γ -induced defects in investigated glasses strongly effect on thresholds of damage q s and q d and on characteristics of ions

  4. Networked Sensor Arrays

    International Nuclear Information System (INIS)

    Tighe, R. J.

    2002-01-01

    A set of independent radiation sensors, coupled with real-time data telemetry, offers the opportunity to run correlation algorithms for the sensor array as well as to incorporate non-radiological data into the system. This may enhance the overall sensitivity of the sensors and provide an opportunity to project the location of a source within the array. In collaboration with Lawrence Livermore National Laboratory (LLNL) and Sandia National Laboratories (SNL), we have conducted field experiments to test a prototype system. Combining the outputs of a set of distributed sensors permits the correlation that the independent sensor outputs. Combined with additional information such as traffic patterns and velocities, this can reduce random/false detections and enhance detection capability. The principle components of such a system include: (1) A set of radiation sensors. These may be of varying type and complexity, including gamma and/or neutron detectors, gross count and spectral-capable sensors, and low to high energy-resolution sensors. (2) A set of non-radiation sensors. These may include sensors such as vehicle presence and imaging sensors. (3) A communications architecture for near real-time telemetry. Depending upon existing infrastructure and bandwidth requirements, this may be a radio or hard-wire based system. (4) A central command console to pole the sensors, correlate their output, and display the data in a meaningful form to the system operator. Both sensitivity and selectivity are important considerations when evaluating the performance of a detection system. Depending on the application, the optimization of sensitivity as well as the rejection of ''nuisance'' radioactive sources may or may not be critical

  5. An edge-TCT setup for the investigation of radiation damaged silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Feindt, Finn; Scharf, Christian; Garutti, Erika; Klanner, Robert [Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg (Germany)

    2016-07-01

    The aim of this work is to measure the electric field, drift velocity and charge collection of electrons and holes in radiation-damaged silicon strip sensors. For this purpose the edge Transient Current Technique (TCT) is employed. In contrast to conventional TCT, this method requires light from a sub-ns pulsed, infrared laser to be focused to a μm-size spot and scanned across the polished edge of a strip sensor. Thus electron-hole pairs are generated at a known depth in the sensor. Electrons and holes drift in the electric field and induce transient currents on the sensor electrodes. The current wave forms are analyzed as a function of the applied voltage and the position of the laser focus in order to determine the electric field, the drift velocities and the charge collection. In this talk the setup and the procedure for polishing the sensor edge are described, and first results, regarding the measurement of the laser light focus are presented.

  6. Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

    CERN Document Server

    Despeisse, M; Jarron, P; Kaplon, J; Moraes, D; Nardulli, A; Powolny, F; Wyrsch, N

    2008-01-01

    Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three different circuits were designed in a quarter micron CMOS technology for these studies. The so-called TFA (Thin-Film on ASIC) detectors obtained after deposition of a-Si:H sensors on the developed circuits are presented. High internal electric fields (104 to 105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in this amorphous material. However, the deposited sensor's leakage current at such fields turns out to be an important parameter which limits the performance of a TFA detector. Its detailed study is presented as well as the detector's pixel segmentation. Signal induction by generated free carrier motion in the a-Si:H sensor has been characterized using a 660 nm pul...

  7. Radiation hardening of optical fibers and fiber sensors for space applications: recent advances

    Science.gov (United States)

    Girard, S.; Ouerdane, Y.; Pinsard, E.; Laurent, A.; Ladaci, A.; Robin, T.; Cadier, B.; Mescia, L.; Boukenter, A.

    2017-11-01

    In these ICSO proceedings, we review recent advances from our group concerning the radiation hardening of optical fiber and fiber-based sensors for space applications and compare their benefits to state-of-the-art results. We focus on the various approaches we developed to enhance the radiation tolerance of two classes of optical fibers doped with rare-earths: the erbium (Er)-doped ones and the ytterbium/erbium (Er/Yb)-doped ones. As a first approach, we work at the component level, optimizing the fiber structure and composition to reduce their intrinsically high radiation sensitivities. For the Erbium-doped fibers, this has been achieved using a new structure for the fiber that is called Hole-Assisted Carbon Coated (HACC) optical fibers whereas for the Er/Ybdoped optical fibers, their hardening was successfully achieved adding to the fiber, the Cerium element, that prevents the formation of the radiation-induced point defects responsible for the radiation induced attenuation in the infrared part of the spectrum. These fibers are used as part of more complex systems like amplifiers (Erbium-doped Fiber Amplifier, EDFA or Yb-EDFA) or source (Erbium-doped Fiber Source, EDFS or Yb- EDFS), we discuss the impact of using radiation-hardened fibers on the system radiation vulnerability and demonstrate the resistance of these systems to radiation constraints associated with today and future space missions. Finally, we will discuss another radiation hardening approach build in our group and based on a hardening-by-system strategy in which the amplifier is optimized during its elaboration for its future mission considering the radiation effects and not in-lab.

  8. Performance Evaluation of Radiation Sensors for the Solar Energy Sector

    Directory of Open Access Journals (Sweden)

    Laurent Vuilleumier

    2017-11-01

    Full Text Available Rotating Shadowband Irradiometers (RSI and SPN1 Sunshine Pyranometers allow determining the diffuse and direct components of solar radiation without sun trackers; they can be deployed in networks for continuous field operation with modest maintenance. Their performances are evaluated here by analyzing their errors with respect to well characterized references. The analysis is based on 1‑minute data recorded over a 15‑month period at the Payerne BSRN station in Switzerland. The analysis was applied both to the whole dataset and data subsets reflecting particular conditions to allow a better understanding of how instrument performance depends on such conditions.The overall performance for measuring global horizontal irradiance (GHI is satisfactory with deviations compatible with an expanded uncertainty of ±25 Wm−2 (±10 %. For diffuse horizontal irradiance (DfHI, RSIs exhibited errors on the order of ±20 Wm−2 (±13 % with some of them being affected by small systematic negative biases on the order of −5 Wm−2 (median. SPN1s underestimate DfHI by about −10 Wm−2 (median with a relatively large range of the expanded error distribution between −45 Wm−2 and 20 Wm−2 (−35 % to 13 %. For direct normal irradiance (DNI, the extended error range for RSIs is on the order of ±40 Wm−2 (±5–6 % with some instruments presenting no bias while others are affected by median biases up to −15 Wm−2. SPN1s exhibit a relatively large median bias of 40 Wm−2, and an extended range of the error distribution between −45 Wm−2 and 125 Wm−2 (−6 % to 19 %. Typical errors on the integrated yearly energy per unit surface area are on the order of a few percent or less (< 5 % for RSI with negligible errors on DNI for some RSI instruments. SPN1 integrated errors are negligible for GHI, but on the order of −8 % for DfHI, and between 9 % and 11 % for DNI.For RSIs, GHI and DfHI errors showed

  9. Gamma response study of radiation sensitive MOSFETs for their use as gamma radiation sensor

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Saurabh; Kumar, A. Vinod [Radiation Safety Systems Division, Bhabha Atomic Research Centre, Mumbai (India); Aggarwal, Bharti; Singh, Arvind; Topkar, Anita, E-mail: anita@barc.gov.in [Electronics Division, Bhabha Atomic Research Centre, Mumbai (India)

    2016-05-23

    Continuous monitoring of gamma dose is important in various fields like radiation therapy, space-related research, nuclear energy programs and high energy physics experiment facilities. The present work is focused on utilization of radiation-sensitive Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) to monitor gamma radiation doses. Static characterization of these detectors was performed to check their expected current-voltage relationship. Threshold voltage and transconductance per unit gate to source voltage (K factor) were calculated from the experimental data. The detector was exposed to gamma radiation in both, with and without gate bias voltage conditions, and change in threshold voltage was monitored at different gamma doses. The experimental data was fitted to obtain equation for dependence of threshold voltage on gamma dose. More than ten times increase in sensitivity was observed in biased condition (+3 V) compared to the unbiased case.

  10. Methodology Development for SiC Sensor Signal Modelling in the Nuclear Reactor Radiation Environments

    International Nuclear Information System (INIS)

    Cetnar, J.; Krolikowski, I.P.

    2013-06-01

    This paper deals with SiC detector simulation methodology for signal formation by neutrons and induced secondary radiation as well as its inverse interpretation. The primary goal is to achieve the SiC capability of simultaneous spectroscopic measurements of neutrons and gamma-rays for which an appropriate methodology of the detector signal modelling and its interpretation must be adopted. The process of detector simulation is divided into two basically separate but actually interconnected sections. The first one is the forward simulation of detector signal formation in the field of the primary neutron and secondary radiations, whereas the second one is the inverse problem of finding a representation of the primary radiation, based on the measured detector signals. The applied methodology under development is based on the Monte Carlo description of radiation transport and analysis of the reactor physics. The methodology of SiC detector signal interpretation will be based on the existing experience in neutron metrology developed in the past for various neutron and gamma-ray detection systems. Since the novel sensors based on SiC are characterised by a new structure, yet to be finally designed, the methodology for particle spectroscopic fluence measurement must be developed while giving a productive feed back to the designing process of SiC sensor, in order to arrive at the best possible design. (authors)

  11. Beta particle detection efficiency of the radiation sensor made from a mixture of polyaniline and titanium oxide

    International Nuclear Information System (INIS)

    Tamura, M.; Miyata, H.; Katsumata, M.; Matsuda, K.; Ueno, T.; Ito, D.; Suzuki, T.

    2016-01-01

    We developed a new real-time radiation sensor using an organic semiconductor and measured its β-particle detection sensitivity. This sensor is fabricated by simply combining a p-type semiconductor, polyaniline (Pani), with an n-type semiconductor, TiO_2, and processing the compound. Since Pani and TiO_2 are both inexpensive materials, the sensor can be fabricated at a lower cost than inorganic semiconductor sensors. The signal of each fabricated sensor was measured by a charge sensitive ADC for the irradiation of β-particles. The response signal data of the ADC for each irradiation was measured to calculate the detection efficiency of the detector. The maximum detection efficiency measured as β-particle sensitivity of the sensor was 1%. This β-particle sensitivity is higher than that reported of Pani sensors in the past.

  12. Sensors

    CERN Document Server

    Pigorsch, Enrico

    1997-01-01

    This is the 5th edition of the Metra Martech Directory "EUROPEAN CENTRES OF EXPERTISE - SENSORS." The entries represent a survey of European sensors development. The new edition contains 425 detailed profiles of companies and research institutions in 22 countries. This is reflected in the diversity of sensors development programmes described, from sensors for physical parameters to biosensors and intelligent sensor systems. We do not claim that all European organisations developing sensors are included, but this is a good cross section from an invited list of participants. If you see gaps or omissions, or would like your organisation to be included, please send details. The data base invites the formation of effective joint ventures by identifying and providing access to specific areas in which organisations offer collaboration. This issue is recognised to be of great importance and most entrants include details of collaboration offered and sought. We hope the directory on Sensors will help you to find the ri...

  13. Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, H. [PBI-Dansensor A/S (Denmark); Toft Soerensen, O. [Risoe National Lab., Materials Research Dept. (Denmark)

    1999-10-01

    A new type of ceramic oxygen sensors based on semiconducting oxides was developed in this project. The advantage of these sensors compared to standard ZrO{sub 2} sensors is that they do not require a reference gas and that they can be produced in small sizes. The sensor design and the techniques developed for production of these sensors are judged suitable by the participating industry for a niche production of a new generation of oxygen sensors. Materials research on new oxygen ion conducting conductors both for applications in oxygen sensors and in fuel was also performed in this project and finally a new process was developed for fabrication of ceramic tubes by dip-coating. (EHS)

  14. Aespoe Hard Rock Laboratory. Temperature Buffer Test. Sensors data report (Period 030326-080701) Report No:12

    International Nuclear Information System (INIS)

    Goudarzi, Reza; Aakesson, Mattias; Hoekmark, Harald

    2008-01-01

    obtained in the hot parts of the system with fiber optic sensors installed by DBE are reported in Appendix B. A general conclusion is that the measuring systems and transducers work well and almost all sensors deliver reliable values. An exception is the Relative Humidity sensors in the high temperature area around the lower canister, where sensors have failed. The dense arrays of thermocouples at the mid-height of the two heaters appear to be useful for examining the dehydration/hydration process qualitatively. In the lower section there are clear signs of early dehydration in a 0.15 m annular zone around the heater. Resaturation of this part is now slowly in progress. In the bentonite buffer, most humidity sensors measurements are now insignificant, the material being too close to saturation. However in the upper section (Ring 9), the fact that pore pressure start equilibrating with the water pressure in the sand slot indicates a quasi saturation of the clay material. This sand slot set between the bentonite column and the surrounding rock is used for artificial wetting. More than the water theoretically needed to fill up the sand slot and to saturate the bentonite has already been injected, which proves that the system is not hydraulically closed but leaks towards the rock (EDZ). The high sand slot injection pressure required to maintain the inflow shows the weakness of the injection system (clogging of the filter tips). An unclogging action was therefore performed by injecting demineralised water instead of ground water, as it was done since the beginning of the experiment. This action proved successful, and it is now possible to maintain the hydraulic pressure in the filter around 4 bar absolute. The decrease in total pressure and increase in suction that was recorded around the upper canister from day 225 to day 370 has been caused by an unexpected lack of water supply in the upper part of the sand slot. When this slot got filled again with water, the total pressure

  15. Aespoe Hard Rock Laboratory. Temperature Buffer Test. Sensors data report (Period 030326-080701) Report No:12

    Energy Technology Data Exchange (ETDEWEB)

    Goudarzi, Reza; Aakesson, Mattias; Hoekmark, Harald (Clay Technology AB, Lund (Sweden))

    2008-07-01

    obtained in the hot parts of the system with fiber optic sensors installed by DBE are reported in Appendix B. A general conclusion is that the measuring systems and transducers work well and almost all sensors deliver reliable values. An exception is the Relative Humidity sensors in the high temperature area around the lower canister, where sensors have failed. The dense arrays of thermocouples at the mid-height of the two heaters appear to be useful for examining the dehydration/hydration process qualitatively. In the lower section there are clear signs of early dehydration in a 0.15 m annular zone around the heater. Resaturation of this part is now slowly in progress. In the bentonite buffer, most humidity sensors measurements are now insignificant, the material being too close to saturation. However in the upper section (Ring 9), the fact that pore pressure start equilibrating with the water pressure in the sand slot indicates a quasi saturation of the clay material. This sand slot set between the bentonite column and the surrounding rock is used for artificial wetting. More than the water theoretically needed to fill up the sand slot and to saturate the bentonite has already been injected, which proves that the system is not hydraulically closed but leaks towards the rock (EDZ). The high sand slot injection pressure required to maintain the inflow shows the weakness of the injection system (clogging of the filter tips). An unclogging action was therefore performed by injecting demineralised water instead of ground water, as it was done since the beginning of the experiment. This action proved successful, and it is now possible to maintain the hydraulic pressure in the filter around 4 bar absolute. The decrease in total pressure and increase in suction that was recorded around the upper canister from day 225 to day 370 has been caused by an unexpected lack of water supply in the upper part of the sand slot. When this slot got filled again with water, the total pressure

  16. A nonlinear support vector machine model with hard penalty function based on glowworm swarm optimization for forecasting daily global solar radiation

    International Nuclear Information System (INIS)

    Jiang, He; Dong, Yao

    2016-01-01

    Highlights: • Eclat data mining algorithm is used to determine the possible predictors. • Support vector machine is converted into a ridge regularization problem. • Hard penalty selects the number of radial basis functions to simply the structure. • Glowworm swarm optimization is utilized to determine the optimal parameters. - Abstract: For a portion of the power which is generated by grid connected photovoltaic installations, an effective solar irradiation forecasting approach must be crucial to ensure the quality and the security of power grid. This paper develops and investigates a novel model to forecast 30 daily global solar radiation at four given locations of the United States. Eclat data mining algorithm is first presented to discover association rules between solar radiation and several meteorological factors laying a theoretical foundation for these correlative factors as input vectors. An effective and innovative intelligent optimization model based on nonlinear support vector machine and hard penalty function is proposed to forecast solar radiation by converting support vector machine into a regularization problem with ridge penalty, adding a hard penalty function to select the number of radial basis functions, and using glowworm swarm optimization algorithm to determine the optimal parameters of the model. In order to illustrate our validity of the proposed method, the datasets at four sites of the United States are split to into training data and test data, separately. The experiment results reveal that the proposed model delivers the best forecasting performances comparing with other competitors.

  17. SREQP: A Solar Radiation Extraction and Query Platform for the Production and Consumption of Linked Data from Weather Stations Sensors

    Directory of Open Access Journals (Sweden)

    José Luis Sánchez-Cervantes

    2016-01-01

    Full Text Available Nowadays, solar radiation information is provided from sensors installed in different geographic locations and platforms of meteorological agencies. However, common formats such as PDF files and HTML documents to provide solar radiation information do not offer semantics in their content, and they may pose problems to integrate and fuse data from multiple resources. One of the challenges of sensors Web is the unification of data from multiple sources, although this type of information facilitates interoperability with other sensor Web systems. This research proposes architecture SREQP (Solar Radiation Extraction and Query Platform to extract solar radiation data from multiple external sources and merge them on a single and unique platform. SREQP makes use of Linked Data to generate a set of triples containing information about extracted data, which allows final users to query data through a SPARQL endpoint. The conceptual model was developed by using known vocabularies, such as SSN or WGS84. Moreover, an Analytic Hierarchy Process was carried out for the evaluation of SREQP in order to identify and evaluate the main features of Linked-Sensor-Data and the sensor Web systems. Results from the evaluation indicated that SREQP contained most of the features considered essential in Linked-Sensor-Data and sensor Web systems.

  18. Cosmic non-TEM radiation and synthetic feed array sensor system in ASIC mixed signal technology

    Science.gov (United States)

    Centureli, F.; Scotti, G.; Tommasino, P.; Trifiletti, A.; Romano, F.; Cimmino, R.; Saitto, A.

    2014-08-01

    The paper deals with the opportunity to introduce "Not strictly TEM waves" Synthetic detection Method (NTSM), consisting in a Three Axis Digital Beam Processing (3ADBP), to enhance the performances of radio telescope and sensor systems. Current Radio Telescopes generally use the classic 3D "TEM waves" approximation Detection Method, which consists in a linear tomography process (Single or Dual axis beam forming processing) neglecting the small z component. The Synthetic FEED ARRAY three axis Sensor SYSTEM is an innovative technique using a synthetic detection of the generic "NOT strictly TEM Waves radiation coming from the Cosmo, which processes longitudinal component of Angular Momentum too. Than the simultaneous extraction from radiation of both the linear and quadratic information component, may reduce the complexity to reconstruct the Early Universe in the different requested scales. This next order approximation detection of the observed cosmologic processes, may improve the efficacy of the statistical numerical model used to elaborate the same information acquired. The present work focuses on detection of such waves at carrier frequencies in the bands ranging from LF to MMW. The work shows in further detail the new generation of on line programmable and reconfigurable Mixed Signal ASIC technology that made possible the innovative Synthetic Sensor. Furthermore the paper shows the ability of such technique to increase the Radio Telescope Array Antenna performances.

  19. Study and characterization of an integrated circuit-deposited hydrogenated amorphous silicon sensor for the detection of particles and radiations

    International Nuclear Information System (INIS)

    Despeisse, M.

    2006-03-01

    Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor-chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application. (author)

  20. UV Radiation Detection Using Optical Sensor Based on Eu3+ Doped PMMA

    Directory of Open Access Journals (Sweden)

    Miluski Piotr

    2016-12-01

    Full Text Available Progress in UV treatment applications requires new compact and sensor constructions. In the paper a hybrid (organic-inorganic rare-earth-based polymeric UV sensor construction is proposed. The efficient luminescence of poly(methyl methacrylate (PMMA matrix doped by europium was used for testing the optical sensor (optrode construction. The europium complex assures effective luminescence in the visible range with well determined multi-peak spectrum emission enabling construction of the optrode. The fabricated UV optical fibre sensor was used for determination of Nd:YAG laser intensity measurements at the third harmonic (355 nm in the radiation power range 5.0-34.0 mW. The multi-peak luminescence spectrum was used for optimization of the measurement formula. The composition of luminescent peak intensity enables to increase the slope of sensitivity up to −2.8 mW-1. The obtained results and advantages of the optical fibre construction enable to apply it in numerous UV detection systems.

  1. Methods and apparatuses for detection of radiation with semiconductor image sensors

    Science.gov (United States)

    Cogliati, Joshua Joseph

    2018-04-10

    A semiconductor image sensor is repeatedly exposed to high-energy photons while a visible light obstructer is in place to block visible light from impinging on the sensor to generate a set of images from the exposures. A composite image is generated from the set of images with common noise substantially removed so the composite image includes image information corresponding to radiated pixels that absorbed at least some energy from the high-energy photons. The composite image is processed to determine a set of bright points in the composite image, each bright point being above a first threshold. The set of bright points is processed to identify lines with two or more bright points that include pixels therebetween that are above a second threshold and identify a presence of the high-energy particles responsive to a number of lines.

  2. Radiation hard detectors from silicon enriched with both oxygen and thermal donors improvements in donor removal and long-term stability with regard to neutron irradiation

    CERN Document Server

    Li, Z; Eremin, V; Dezillie, B; Chen, W; Bruzzi, M

    2002-01-01

    Detectors made on the silicon wafers with high concentration of thermal donors (TD), which were introduced during the high temperature long time (HTLT) oxygenation procedure, have been investigated in the study of radiation hardness with regard to neutron irradiation and donor removal problems in irradiated high resistivity Si detectors. Two facts have been established as the evidence of radiation hardness improvement of HTLT(TD) Si detectors irradiated below approx 10 sup 1 sup 4 n/cm sup 2 compared to detectors made on standard silicon wafers: the increase of space charge sign inversion fluence (of 1 MeV neutrons) due to lower initial Si resistivity dominated by TD, and the gain in the reverse annealing time constant tau favourable for this material. Coupled with extremely high radiation tolerance to protons observed earlier ('beta zero' behaviour in a wide range of fluence), detectors from HTLT(TD) Si may be unique for application in the experiments with multiple radiations. The changes in the effective sp...

  3. Development of radiation detection and measurement system - Development of scintillation radiation sensor

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Hee Dong; Kim, Wan [Kyungpook National University, Taegu (Korea); Kim, Do Sung [Taegu University, Taegu (Korea)

    2000-03-01

    We have been fabricated CsI(Tl) scintillation crystals and plastic scintillators for radiation-based measuring equipment. CsI (Tl) single crystals doped with thallium as an activator were grown using the Czochralski method. The crystal structure of grown CsI(Tl) was bcc, and it was confirmed that its lattice constant was 4,568 A. The spectral range of luminescence of CsI(Tl) was 350 {approx} 700 nm independent of thallium concentration, and the fast component of the luminescence was decreased with increasing thallium concentration. The energy resolution of CsI(Tl) scintillator doped with 0.1 mole% thallium was about 9% for 137 Cs {gamma}-rays. The relation formula of {gamma}-ray energy versus energy resolution was ln(FWHM%)=-0.705ln({epsilon})+6.75. The radiation damage of CsI(Tl) increased in proportion to thallium concentration and radiation damage of CsI(Tl) increased in proportion to thallium concentration and radiation dosage, and the irradiated crystals were colored reddish. The radiation induced absorption bands appeared around 355, 425, 520 and 555 nm, and their energy level were about 3.50, 2.88, 2.39 and 2.21 eV. Plastic scintillators were fabricated thermal polymerization method. Those were polymerizing at 120 deg. C, during 72 hours, and annealing at 75 deg. C, during 24 hours. When the concentration of 1st solute was 1.5 wt% and concentration of 2nd solute was 0.01 wt%, the characteristics of scintillation were very excellent. Also 3.0 wt% tetraphenyl lead were loaded to improve the detection efficiency of {gamma}-ray. The range of emission spectrum was 400 {approx} 450nm, and the central peak was 415 nm. The radiation damage was not appear under 1*10{sup 3}Gy, but the color of plastic scintillator was changed to brown, over 1*10{sup 4}Gy exposured. 84 refs., 39 figs. (Author)

  4. Position sensitive regions in a generic radiation sensor based on single event upsets in dynamic RAMs

    International Nuclear Information System (INIS)

    Darambara, D.G.; Spyrou, N.M.

    1997-01-01

    Modern integrated circuits are highly complex systems and, as such, are susceptible to occasional failures. Semiconductor memory devices, particularly dynamic random access memories (dRAMs), are subject to random, transient single event upsets (SEUs) created by energetic ionizing radiation. These radiation-induced soft failures in the stored data of silicon based memory chips provide the foundation for a new, highly efficient, low cost generic radiation sensor. The susceptibility and the detection efficiency of a given dRAM device to SEUs is a complicated function of the circuit design and geometry, the operating conditions and the physics of the charge collection mechanisms involved. Typically, soft error rates measure the cumulative response of all sensitive regions of the memory by broad area chip exposure in ionizing radiation environments. However, this study shows that many regions of a dynamic memory are competing charge collection centres having different upset thresholds. The contribution to soft fails from discrete regions or individual circuit elements of the memory device is unambiguously separated. Hence the use of the dRAM as a position sensitive radiation detector, with high spatial resolution, is assessed and demonstrated. (orig.)

  5. Applications of the energy differentiation type radiation line sensor to such as inspection for the plumbing corrosion

    International Nuclear Information System (INIS)

    Tomita, Yasuhiro; Shirayanagi, Yuji; Matsui, Shinjiro; Kamiya, Yosuke; Kobayashi, Akira

    2015-01-01

    The authors have engaged in development of the next-generation radiation detectors that can give information on energy such as X-rays and γ-rays, and commercialized an energy discrimination type radiation line sensor capable of discriminating the energy of photons using a CdTe radiation detector element. This paper introduces the structure and principles of this energy discrimination type radiation line sensor. As the basic application, it also introduces the material identification, energy discrimination type X-ray CT imaging, and the quantitative determination of iron plate thickness using X-ray. In addition, it introduces the radiation line sensor we have developed for inspecting the reduced amount of wall thickness of piping with insulation materials. This radiation line sensor for pipe thinning inspection combined with radiation sources (X-rays, γ-rays) and a transport system is capable of accurately and efficiently inspecting reduced wall thickness, while moving the censor on the covered pipe with heat insulating materials through remote control, without removing piping insulation materials and without stopping the use of piping. (A.O.)

  6. Low-cost sensor integrators for measuring the transmissivity of complex canopies to photosynthetically active radiation

    International Nuclear Information System (INIS)

    Newman, S.M.

    1985-01-01

    A system has been designed, tested and evaluated for measuring the transmissivities of complex canopies to photosynthetically active radiation (PAR). The system consists of filtered silicon photocells in cosine corrected mounts with outputs integrated by the use of chemical coulometers. The reading accumulated by the coulometers was taken electronically by the use of microcomputers. The low-cost sensor integrators, which do not require batteries, performed as expected and proved ideal for the study of agroforestry systems in remote areas. Information on the PAR transmissivity of a temperate agroforestry system in the form of an intercropped orchard is also presented. (author)

  7. CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko, E-mail: thirono@uni-bonn.de [Physikalisches Institute der Universität Bonn, Bonn (Germany); Barbero, Marlon; Breugnon, Patrick; Godiot, Stephanie [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Gonella, Laura; Hemperek, Tomasz; Hügging, Fabian; Krüger, Hans [Physikalisches Institute der Universität Bonn, Bonn (Germany); Liu, Jian; Pangaud, Patrick [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Peric, Ivan [IPE, Karlsruher Institut für Technologie, Karlsruhe (Germany); Pohl, David-Leon [Physikalisches Institute der Universität Bonn, Bonn (Germany); Rozanov, Alexandre [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Rymaszewski, Piotr [Physikalisches Institute der Universität Bonn, Bonn (Germany); Wang, Anqing [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Wermes, Norbert [Physikalisches Institute der Universität Bonn, Bonn (Germany)

    2016-09-21

    A depleted CMOS active pixel sensor (DMAPS) has been developed on a substrate with high resistivity in a high voltage process. High radiation tolerance and high time resolution can be expected because of the charge collection by drift. A prototype of DMAPS was fabricated in a 150 nm process by LFoundry. Two variants of the pixel layout were tested, and the measured depletion depths of the variants are 166 μm and 80 μm. We report the results obtained with the prototype fabricated in this technology.

  8. Accompanying of parameters of color, gloss and hardness on polymeric films coated with pigmented inks cured by different radiation doses of ultraviolet light

    International Nuclear Information System (INIS)

    Gonçalves Bardi, Marcelo Augusto; Brocardo Machado, Luci Diva

    2012-01-01

    In the search for alternatives to traditional paint systems solvent-based, the curing process of polymer coatings by ultraviolet light (UV) has been widely studied and discussed, especially because of their high content of solids and null emission of VOC. In UV-curing technology, organic solvents are replaced by reactive diluents, such as monomers. This paper aims to investigate variations on color, gloss and hardness of print inks cured by different UV radiation doses. The ratio pigment/clear coating was kept constant. The clear coating presented higher average values for König hardness than pigmented ones, indicating that UV-light absorption has been reduced by the presence of pigments. Besides, they have indicated a slight variation in function of cure degree for the studied radiation doses range. The gloss loss related to UV light exposition allows inferring that some degradation occurred at the surface of print ink films. - Highlights: ► Color, gloss and hardness are directly influenced by the different pigments. ► Clear coating analysis indicates reduction on UV-light absorption. ► Color and gloss indices indicated aeration in function of cure degree.

  9. Feasibility study of the optical fiber Bragg grating sensors in radiation environment

    Energy Technology Data Exchange (ETDEWEB)

    Fujita, Kaoru; Kimura, Atsushi; Nakazawa, Masaharu [Tokyo Univ., Dept. of Quantum Engineering and Systems Science, Tokyo (Japan); Takahashi, Hiroyuki [Tokyo Univ., Center of Engineering, Research into Artifacts, Tokyo (Japan); Ariyoshi, Masahiko [Japan Nuclear Cycle Development Inst., Oarai, Ibaraki (Japan)

    2002-09-01

    Applicability of an optical fiber Bragg grating (FBG)-based vibration sensor to radiation environment was investigated for monitoring nuclear plants. The FBG sensor is a kind of optical fiber sensors which is developing rapidly in recent years. FBGs reflect light which fulfill the Bragg condition {lambda} = 2 n L, where {lambda} is the wave length of reflecting light, n and L are the effective refractive index and length of the modulation period in grating part, respectively. The strain on FBGs influences on n and L and causes shift of {lambda}. The sensitivity to strain of FBG were investigated. The FBGs was irradiated with gamma-rays to investigate the irradiation effects on the FBGs. The Bragg wavelength of FBGs is not affected by gamma-rays up to 1.0 MGy of total absorbed dose. In vibration measurement system, two FBGs were attached to a thin iron plate. Each FBG was set up both side of the thin plate and spliced in series. An audio speaker was used as a vibration source. FBGs were irradiated at the dose rate of 50Gy/h and the vibration were observed in situ. Input signals from oscillator, the output from FBG sensors and the power spectra of the two signals were measured. The output signal was very noisy, however, the peak of the frequency is corresponding. The noise seemed to be arisen during the vibration traveled between the speaker and the plate and considered to be not essential. As a result, it is shown that a change of frequency at the vibration source could be followed by FBG-based sensors. To reduce the noise, the method for conducting the vibration to FBGs should be improved. (M. Suetake)

  10. Feasibility study of the optical fiber Bragg grating sensors in radiation environment

    International Nuclear Information System (INIS)

    Fujita, Kaoru; Kimura, Atsushi; Nakazawa, Masaharu; Takahashi, Hiroyuki; Ariyoshi, Masahiko

    2002-01-01

    Applicability of an optical fiber Bragg grating (FBG)-based vibration sensor to radiation environment was investigated for monitoring nuclear plants. The FBG sensor is a kind of optical fiber sensors which is developing rapidly in recent years. FBGs reflect light which fulfill the Bragg condition λ = 2 n L, where λ is the wave length of reflecting light, n and L are the effective refractive index and length of the modulation period in grating part, respectively. The strain on FBGs influences on n and L and causes shift of λ. The sensitivity to strain of FBG were investigated. The FBGs was irradiated with gamma-rays to investigate the irradiation effects on the FBGs. The Bragg wavelength of FBGs is not affected by gamma-rays up to 1.0 MGy of total absorbed dose. In vibration measurement system, two FBGs were attached to a thin iron plate. Each FBG was set up both side of the thin plate and spliced in series. An audio speaker was used as a vibration source. FBGs were irradiated at the dose rate of 50Gy/h and the vibration were observed in situ. Input signals from oscillator, the output from FBG sensors and the power spectra of the two signals were measured. The output signal was very noisy, however, the peak of the frequency is corresponding. The noise seemed to be arisen during the vibration traveled between the speaker and the plate and considered to be not essential. As a result, it is shown that a change of frequency at the vibration source could be followed by FBG-based sensors. To reduce the noise, the method for conducting the vibration to FBGs should be improved. (M. Suetake)

  11. Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors

    International Nuclear Information System (INIS)

    Goiffon, V.; Virmontois, C.; Magnan, P.; Cervantes, P.; Place, S.; Estribeau, M.; Martin-Gonthier, P.; Gaillardin, M.; Girard, S.; Paillet, P.

    2012-01-01

    This paper presents an investigation of Total Ionizing Dose (TID) induced dark current sources in Pinned Photodiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral shallow trench isolation does not seem to play a role in the degradation. The PPD area and a transfer gate contribution independent of the pixel dimensions appear to be the main sources of the TID induced dark current increase. This study also demonstrates that applying a negative voltage on the transfer gate during integration strongly reduces the radiation induced dark current. (authors)

  12. Microfabricated electrochemical sensor for the detection of radiation-induced DNA damage

    Energy Technology Data Exchange (ETDEWEB)

    Wang, J.; Rivas, G.; Ozsoz, M.; Grant, D.H.; Cai, X.; Parrado, C. [New Mexico State Univ., Las Cruces, NM (United States)

    1997-04-01

    An electrochemical biosensor protocol for the detection of radiation-induced DNA damage is described. The procedure employs a dsDNA-coated screen-printed electrode and relies on changes in the guanine-DNA oxidation signal upon exposure to ultraviolet radiation. The decreased signal is ascribed primarily to conformational changes in the DNA and to the photoconversion of the guanine-DNA moiety to a nonelectroactive monomeric base product. Factors influencing the response of these microfabricated DNA sensors, such as irradiation time, wavelength, and distance, are explored, and future prospects are discussed. Similar results are given for the use of bare strip electrodes in connection with irradiated DNA solutions. 8 refs., 4 figs.

  13. Silicon sensors for trackers at high-luminosity environment

    Energy Technology Data Exchange (ETDEWEB)

    Peltola, Timo, E-mail: timo.peltola@helsinki.fi

    2015-10-01

    The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented. - Highlights: • An overview of the recent results from the RD50 collaboration. • Accuracy of TCAD simulations increased by including both bulk and surface damage. • Sensors with n-electrode readout and MCz material offer higher radiation hardness. • 3D detectors are a promising choice for the extremely high fluence environments. • Detectors with an enhanced charge carrier generation under systematic investigation.

  14. High resolution hard X-ray photoemission using synchrotron radiation as an essential tool for characterization of thin solid films

    International Nuclear Information System (INIS)

    Kim, J.J.; Ikenaga, E.; Kobata, M.; Takeuchi, A.; Awaji, M.; Makino, H.; Chen, P.P.; Yamamoto, A.; Matsuoka, T.; Miwa, D.; Nishino, Y.; Yamamoto, T.; Yao, T.; Kobayashi, K.

    2006-01-01

    Recently, we have shown that hard X-ray photoemission spectroscopy using undulator X-rays at SPring-8 is quite feasible with both high resolution and high throughput. Here we report an application of hard X-ray photoemission spectroscopy to the characterization of electronic and chemical states of thin solid films, for which conventional PES is not applicable. As a typical example, we focus on the problem of the scatter in the reported band-gap values for InN. We show that oxygen incorporation into the InN film strongly modifies the valence and plays a crucial role in the band gap problem. The present results demonstrate the powerful applicability of high resolution photoemission spectroscopy with hard X-rays from a synchrotron source

  15. A Neural Network Based Intelligent Predictive Sensor for Cloudiness, Solar Radiation and Air Temperature

    Science.gov (United States)

    Ferreira, Pedro M.; Gomes, João M.; Martins, Igor A. C.; Ruano, António E.

    2012-01-01

    Accurate measurements of global solar radiation and atmospheric temperature, as well as the availability of the predictions of their evolution over time, are important for different areas of applications, such as agriculture, renewable energy and energy management, or thermal comfort in buildings. For this reason, an intelligent, light-weight and portable sensor was developed, using artificial neural network models as the time-series predictor mechanisms. These have been identified with the aid of a procedure based on the multi-objective genetic algorithm. As cloudiness is the most significant factor affecting the solar radiation reaching a particular location on the Earth surface, it has great impact on the performance of predictive solar radiation models for that location. This work also represents one step towards the improvement of such models by using ground-to-sky hemispherical colour digital images as a means to estimate cloudiness by the fraction of visible sky corresponding to clouds and to clear sky. The implementation of predictive models in the prototype has been validated and the system is able to function reliably, providing measurements and four-hour forecasts of cloudiness, solar radiation and air temperature. PMID:23202230

  16. Use of MODIS Sensor Images Combined with Reanalysis Products to Retrieve Net Radiation in Amazonia

    Science.gov (United States)

    de Oliveira, Gabriel; Brunsell, Nathaniel A.; Moraes, Elisabete C.; Bertani, Gabriel; dos Santos, Thiago V.; Shimabukuro, Yosio E.; Aragão, Luiz E. O. C.

    2016-01-01

    In the Amazon region, the estimation of radiation fluxes through remote sensing techniques is hindered by the lack of ground measurements required as input in the models, as well as the difficulty to obtain cloud-free images. Here, we assess an approach to estimate net radiation (Rn) and its components under all-sky conditions for the Amazon region through the Surface Energy Balance Algorithm for Land (SEBAL) model utilizing only remote sensing and reanalysis data. The study period comprised six years, between January 2001–December 2006, and images from MODIS sensor aboard the Terra satellite and GLDAS reanalysis products were utilized. The estimates were evaluated with flux tower measurements within the Large-Scale Biosphere-Atmosphere Experiment in Amazonia (LBA) project. Comparison between estimates obtained by the proposed method and observations from LBA towers showed errors between 12.5% and 16.4% and 11.3% and 15.9% for instantaneous and daily Rn, respectively. Our approach was adequate to minimize the problem related to strong cloudiness over the region and allowed to map consistently the spatial distribution of net radiation components in Amazonia. We conclude that the integration of reanalysis products and satellite data, eliminating the need for surface measurements as input model, was a useful proposition for the spatialization of the radiation fluxes in the Amazon region, which may serve as input information needed by algorithms that aim to determine evapotranspiration, the most important component of the Amazon hydrological balance. PMID:27347957

  17. Use of MODIS Sensor Images Combined with Reanalysis Products to Retrieve Net Radiation in Amazonia.

    Science.gov (United States)

    de Oliveira, Gabriel; Brunsell, Nathaniel A; Moraes, Elisabete C; Bertani, Gabriel; Dos Santos, Thiago V; Shimabukuro, Yosio E; Aragão, Luiz E O C

    2016-06-24

    In the Amazon region, the estimation of radiation fluxes through remote sensing techniques is hindered by the lack of ground measurements required as input in the models, as well as the difficulty to obtain cloud-free images. Here, we assess an approach to estimate net radiation (Rn) and its components under all-sky conditions for the Amazon region through the Surface Energy Balance Algorithm for Land (SEBAL) model utilizing only remote sensing and reanalysis data. The study period comprised six years, between January 2001-December 2006, and images from MODIS sensor aboard the Terra satellite and GLDAS reanalysis products were utilized. The estimates were evaluated with flux tower measurements within the Large-Scale Biosphere-Atmosphere Experiment in Amazonia (LBA) project. Comparison between estimates obtained by the proposed method and observations from LBA towers showed errors between 12.5% and 16.4% and 11.3% and 15.9% for instantaneous and daily Rn, respectively. Our approach was adequate to minimize the problem related to strong cloudiness over the region and allowed to map consistently the spatial distribution of net radiation components in Amazonia. We conclude that the integration of reanalysis products and satellite data, eliminating the need for surface measurements as input model, was a useful proposition for the spatialization of the radiation fluxes in the Amazon region, which may serve as input information needed by algorithms that aim to determine evapotranspiration, the most important component of the Amazon hydrological balance.

  18. A monolithic active pixel sensor for ionizing radiation using a 180 nm HV-SOI process

    Energy Technology Data Exchange (ETDEWEB)

    Hemperek, Tomasz; Kishishita, Tetsuichi; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn, Bonn (Germany)

    2016-07-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-180 nm High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. Standard FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to trapped charge in the buried oxide layer and charged interface states created at the silicon oxide boundaries (back gate effect). The X-FAB 180 nm HV-SOI technology offers an additional isolation using a deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection. The design and measurement results from first prototypes are presented including radiation tolerance to total ionizing dose and charge collection properties of neutron irradiated samples.

  19. Air Temperature Error Correction Based on Solar Radiation in an Economical Meteorological Wireless Sensor Network.

    Science.gov (United States)

    Sun, Xingming; Yan, Shuangshuang; Wang, Baowei; Xia, Li; Liu, Qi; Zhang, Hui

    2015-07-24

    Air temperature (AT) is an extremely vital factor in meteorology, agriculture, military, etc., being used for the prediction of weather disasters, such as drought, flood, frost, etc. Many efforts have been made to monitor the temperature of the atmosphere, like automatic weather stations (AWS). Nevertheless, due to the high cost of specialized AT sensors, they cannot be deployed within a large spatial density. A novel method named the meteorology wireless sensor network relying on a sensing node has been proposed for the purpose of reducing the cost of AT monitoring. However, the temperature sensor on the sensing node can be easily influenced by environmental factors. Previous research has confirmed that there is a close relation between AT and solar radiation (SR). Therefore, this paper presents a method to decrease the error of sensed AT, taking SR into consideration. In this work, we analyzed all of the collected data of AT and SR in May 2014 and found the numerical correspondence between AT error (ATE) and SR. This corresponding relation was used to calculate real-time ATE according to real-time SR and to correct the error of AT in other months.

  20. Air Temperature Error Correction Based on Solar Radiation in an Economical Meteorological Wireless Sensor Network

    Directory of Open Access Journals (Sweden)

    Xingming Sun

    2015-07-01

    Full Text Available Air temperature (AT is an extremely vital factor in meteorology, agriculture, military, etc., being used for the prediction of weather disasters, such as drought, flood, frost, etc. Many efforts have been made to monitor the temperature of the atmosphere, like automatic weather stations (AWS. Nevertheless, due to the high cost of specialized AT sensors, they cannot be deployed within a large spatial density. A novel method named the meteorology wireless sensor network relying on a sensing node has been proposed for the purpose of reducing the cost of AT monitoring. However, the temperature sensor on the sensing node can be easily influenced by environmental factors. Previous research has confirmed that there is a close relation between AT and solar radiation (SR. Therefore, this paper presents a method to decrease the error of sensed AT, taking SR into consideration. In this work, we analyzed all of the collected data of AT and SR in May 2014 and found the numerical correspondence between AT error (ATE and SR. This corresponding relation was used to calculate real-time ATE according to real-time SR and to correct the error of AT in other months.

  1. Vapor transport deposition of large-area polycrystalline CdTe for radiation image sensor application

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Keedong; Cha, Bokyung; Heo, Duchang; Jeon, Sungchae [Korea Electrotechnology Research Institute, 111 Hanggaul-ro, Ansan-si, Gyeonggi-do 426-170 (Korea, Republic of)

    2014-07-15

    Vapor transport deposition (VTD) process delivers saturated vapor to substrate, resulting in high-throughput and scalable process. In addition, VTD can maintain lower substrate temperature than close-spaced sublimation (CSS). The motivation of this work is to adopt several advantages of VTD for radiation image sensor application. Polycrystalline CdTe films were obtained on 300 mm x 300 mm indium tin oxide (ITO) coated glass. The polycrystalline CdTe film has columnar structure with average grain size of 3 μm ∝ 9 μm, which can be controlled by changing the substrate temperature. In order to analyze electrical and X-ray characteristics, ITO-CdTe-Al sandwich structured device was fabricated. Effective resistivity of the polycrystalline CdTe film was ∝1.4 x 10{sup 9}Ωcm. The device was operated under hole-collection mode. The responsivity and the μτ product estimated to be 6.8 μC/cm{sup 2}R and 5.5 x 10{sup -7} cm{sup 2}/V. The VTD can be a process of choice for monolithic integration of CdTe thick film for radiation image sensor and CMOS/TFT circuitry. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment

    International Nuclear Information System (INIS)

    Pease, R.L.; Brown, D.B.; Cohn, L.

    1997-01-01

    A hardness assurance test approach has been developed for bipolar linear circuits and devices in space. It consists of a screen for dose rate sensitivity and a characterization test method to develop the conditions for a lot acceptance test at high dose rate

  3. A pixel unit-cell targeting 16ns resolution and radiation hardness in a column read-out particle vertex detector

    International Nuclear Information System (INIS)

    Wright, M.; Millaud, J.; Nygren, D.

    1993-01-01

    A pixel unit cell (PUC) circuit architecture, optimized for a column read out architecture, is reported. Each PUC contains an integrator, active filter, comparator, and optional analog store. The time-over-threshold (TOT) discriminator allows an all-digital interface to the array periphery readout while passing an analog measure of collected charge. Use of (existing) radiation hard processes, to build a detector bump-bonded to a pixel readout array, is targeted. Here emphasis is on a qualitative explanation of how the unique circuit implementation benefits operation for Super Collider (SSC) detector application. (orig.)

  4. A pixel unit-cell targeting 16 ns resolution and radiation hardness in a column read-out particle vertex detector

    International Nuclear Information System (INIS)

    Wright, M.; Millaud, J.; Nygren, D.

    1992-10-01

    A pixel unit cell (PUC) circuit architecture, optimized for a column read out architecture, is reported. Each PUC contains an integrator, active filter, comparator, and optional analog store. The time-over-threshold (TOT) discriminator allows an all-digital interface to the array periphery readout while passing an analog measure of collected charge. Use of (existing) radiation hard processes, to build a detector bump-bonded to a pixel readout array, is targeted. Here, emphasis is on a qualitative explanation of how the unique circuit implementation benefits operation for Super Collider (SSC) detector application

  5. Modeling of the Signal Formation in SiC Sensors for Measurements of the Radiation Spectrum in Nuclear Energy

    International Nuclear Information System (INIS)

    Krolikowski, Igor P.

    2013-06-01

    The modeling methodology of the signal formation in SiC sensors is presented. The modeling uses two approaches: the first one is the integrated approach whereas the second is the analytical approach. The sensor response is obtained from both approaches: this is the usual solution of the forward problem. Moreover, the response function of the sensor is evaluated by means of the analytical approach and it can be used to solve the inverse problem: recovering the primary radiation spectrum using the response of the sensor. Additionally, the response function returns information about the signal formation in the sensor such as the shape of the response formed by particles with a specific energy. Results obtained by simulations are then compared with experimental data. (authors)

  6. An enhanced ionising radiation monitoring and detecting technique in radiotherapy units of hospitals using wireless sensor networks

    International Nuclear Information System (INIS)

    Ali, Peter

    2017-01-01

    In this paper, a solution of ionising radiation monitoring based on the concept of Wireless Sensor Network (WSN), is presented. Radiation dose rate measured by the sensor node is sent to the monitoring station through ZigBee wireless network operated on 2.4 GHz unlicensed Industrial Scientific Medical (ISM) band. The system is calibrated for use for ionizing radiation dose rate range of between amount of ionising radiation observed in radiotherapy unit of a hospital and 1.02 mSv/h. Power consumption of the sensor node is kept low by operating the node ZigBee radio with low duty cycle: i.e. by keeping the radio awake only during data transmission/reception. Two ATmega8 microcontrollers, one each for sensor node and the monitoring station, are programmed to perform interfacing, data processing, and control functions. The system range of coverage is 124m for outdoor (line of site) deployment and 56.8m for indoor application where 5 brick walls separated the sensor node and the monitoring station. Range of coverage of the system is extendable via the use of ZigBee router (s)

  7. Enhancement of ZnO-rGO nanocomposite thin films by gamma radiation for E. coli sensor

    Energy Technology Data Exchange (ETDEWEB)

    Noor Azmy, Noor Azwen [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, 43650, UKM, Bangi, Selangor (Malaysia); Bakar, Ahmad Ashrif A., E-mail: ashrif@ukm.edu.my [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, 43650, UKM, Bangi, Selangor (Malaysia); Arsad, Norhana [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, 43650, UKM, Bangi, Selangor (Malaysia); Idris, Sarada [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, 43650, UKM, Bangi, Selangor (Malaysia); Radiation Facilities Division, Block 42, Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor (Malaysia); Mohmad, Abdul Rahman [MEMS-NEMS and Nanoelectronics, Institute of Microengineering and Nanoelectronics (IMEN), 43650 UKM, Bangi, Selangor (Malaysia); Abdul Hamid, Aidil [School of Biosciences and Biotechnology, Faculty of Science and Technology, 43650 UKM, Bangi, Selangor (Malaysia)

    2017-01-15

    Highlights: • ZnO-rGO nanocomposite thin films by gamma radiation for E. coli sensor were fabricated for the first time. • Exposed to gamma radiation leads to the change the microstructure of the films. • The optical behaviors of thin films were found to be gamma dose dependent. • The sensors had a linear response with GO concentration. • The sensors exhibited enhanced sensitivity at higher gamma radiation. - Abstract: The fabricated E. coli sensor of ZnO-rGO nanocomposite thin films by gamma radiation was investigated. Nanocomposite films were prepared via sol–gel method and were irradiated at 10 kGy at room temperature. The surface characteristic of as-prepared samples have been characterized by x-ray diffraction (XRD), fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The proposed structure shows that exposed gamma radiation may change the microstructure of the films occurs as a result of their flexible structure. Uv–vis spectra of nanocomposite were studied to investigate the optical behavior of ZnO-rGO films and the optical energy band gap and Urbach energy were found to be gamma dose dependent. The sensing properties were identified by measuring the changes of conductivity of film using I-V measurement. Upon exposure to E. coli, the radiated ZnO-rGO films (1.00 vol% GO) exhibited higher sensitivity, as much as 4.62 × 10{sup −3}, than un-radiated films, 1.04 × 10{sup −3}. This enhancement of the I-V response was attributed to a positive influence of the gamma radiation in these films. The results prove that our ZnO-rGO nanocomposites thin films by gamma radiation demonstrate a strong performance for the detection of microbiological organisms in water.

  8. Hydraulic fracture monitoring in hard rock at 410 m depth with an advanced fluid-injection protocol and extensive sensor array

    Science.gov (United States)

    Zang, Arno; Stephansson, Ove; Stenberg, Leif; Plenkers, Katrin; Specht, Sebastian; Milkereit, Claus; Schill, Eva; Kwiatek, Grzegorz; Dresen, Georg; Zimmermann, Günter; Dahm, Torsten; Weber, Michael

    2017-02-01

    In this paper, an underground experiment at the Äspö Hard Rock Laboratory (HRL) is described. Main goal is optimizing geothermal heat exchange in crystalline rock mass at depth by multistage hydraulic fracturing with minimal impact on the environment, that is, seismic events. For this, three arrays with acoustic emission, microseismicity and electromagnetic sensors are installed mapping hydraulic fracture initiation and growth. Fractures are driven by three different water injection schemes (continuous, progressive and pulse pressurization). After a brief review of hydraulic fracture operations in crystalline rock mass at mine scale, the site geology and the stress conditions at Äspö HRL are described. Then, the continuous, single-flow rate and alternative, multiple-flow rate fracture breakdown tests in a horizontal borehole at depth level 410 m are described together with the monitoring networks and sensitivity. Monitoring results include the primary catalogue of acoustic emission hypocentres obtained from four hydraulic fractures with the in situ trigger and localizing network. The continuous versus alternative water injection schemes are discussed in terms of the fracture breakdown pressure, the fracture pattern from impression packer result and the monitoring at the arrays. An example of multistage hydraulic fracturing with several phases of opening and closing of fracture walls is evaluated using data from acoustic emissions, seismic broad-band recordings and electromagnetic signal response. Based on our limited amount of in situ tests (six) and evaluation of three tests in Ävrö granodiorite, in the multiple-flow rate test with progressively increasing target pressure, the acoustic emission activity starts at a later stage in the fracturing process compared to the conventional fracturing case with continuous water injection. In tendency, also the total number and magnitude of acoustic events are found to be smaller in the progressive treatment with

  9. Nuclear Radiation Degradation Study on HD Camera Based on CMOS Image Sensor at Different Dose Rates

    Directory of Open Access Journals (Sweden)

    Congzheng Wang

    2018-02-01

    Full Text Available In this work, we irradiated a high-definition (HD industrial camera based on a commercial-off-the-shelf (COTS CMOS image sensor (CIS with Cobalt-60 gamma-rays. All components of the camera under test were fabricated without radiation hardening, except for the lens. The irradiation experiments of the HD camera under biased conditions were carried out at 1.0, 10.0, 20.0, 50.0 and 100.0 Gy/h. During the experiment, we found that the tested camera showed a remarkable degradation after irradiation and differed in the dose rates. With the increase of dose rate, the same target images become brighter. Under the same dose rate, the radiation effect in bright area is lower than that in dark area. Under different dose rates, the higher the dose rate is, the worse the radiation effect will be in both bright and dark areas. And the standard deviations of bright and dark areas become greater. Furthermore, through the progressive degradation analysis of the captured image, experimental results demonstrate that the attenuation of signal to noise ratio (SNR versus radiation time is not obvious at the same dose rate, and the degradation is more and more serious with increasing dose rate. Additionally, the decrease rate of SNR at 20.0, 50.0 and 100.0 Gy/h is far greater than that at 1.0 and 10.0 Gy/h. Even so, we confirm that the HD industrial camera is still working at 10.0 Gy/h during the 8 h of measurements, with a moderate decrease of the SNR (5 dB. The work is valuable and can provide suggestion for camera users in the radiation field.

  10. Nuclear Radiation Degradation Study on HD Camera Based on CMOS Image Sensor at Different Dose Rates.

    Science.gov (United States)

    Wang, Congzheng; Hu, Song; Gao, Chunming; Feng, Chang

    2018-02-08

    In this work, we irradiated a high-definition (HD) industrial camera based on a commercial-off-the-shelf (COTS) CMOS image sensor (CIS) with Cobalt-60 gamma-rays. All components of the camera under test were fabricated without radiation hardening, except for the lens. The irradiation experiments of the HD camera under biased conditions were carried out at 1.0, 10.0, 20.0, 50.0 and 100.0 Gy/h. During the experiment, we found that the tested camera showed a remarkable degradation after irradiation and differed in the dose rates. With the increase of dose rate, the same target images become brighter. Under the same dose rate, the radiation effect in bright area is lower than that in dark area. Under different dose rates, the higher the dose rate is, the worse the radiation effect will be in both bright and dark areas. And the standard deviations of bright and dark areas become greater. Furthermore, through the progressive degradation analysis of the captured image, experimental results demonstrate that the attenuation of signal to noise ratio (SNR) versus radiation time is not obvious at the same dose rate, and the degradation is more and more serious with increasing dose rate. Additionally, the decrease rate of SNR at 20.0, 50.0 and 100.0 Gy/h is far greater than that at 1.0 and 10.0 Gy/h. Even so, we confirm that the HD industrial camera is still working at 10.0 Gy/h during the 8 h of measurements, with a moderate decrease of the SNR (5 dB). The work is valuable and can provide suggestion for camera users in the radiation field.

  11. Radiation Hard GaNFET High Voltage Multiplexing (HV Mux) for the ATLAS Upgrade Silicon Strip Tracker

    CERN Document Server

    Lynn, David; The ATLAS collaboration

    2017-01-01

    The outer radii of the inner tracker (ITk) for the Phase-II Upgrade of the ATLAS experiment will consist of groups of silicon strip sensors mounted on common support structures. Lack of space creates a need to remotely disable a failing sensor from the common HV bus. We have developed circuitry consisting of a GaNFET transistor and a HV Multiplier circuit to disable a failed sensor. We will present two variants of the HV Mux circuitry and show irradiation results on individual components with an emphasis on the GaNFET results. We will also discuss the reliability of the HV Mux circuitry and show plans to ensure reliability during production.

  12. Practical Use Technique of Sensor

    International Nuclear Information System (INIS)

    Hwang, Gyu Seop

    1985-11-01

    This book tells of practical use technology of sensor, introducing the recent trend of sensor for electronic industry, IC temperature sensor, radiation temperature sensor of surface acoustic wave, optical fiber temperature sensor, a polyelectrolyte film humidity sensor, semiconductor pressure sensor for industrial instrumentation, silicon integration pressure sensor, thick film humidity sensor and its application, photo sensor reflection type, and color sensor. It also deals with sensor for FA, sensor for a robot and sensor for the chemical industry.

  13. Practical Use Technique of Sensor

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Gyu Seop

    1985-11-15

    This book tells of practical use technology of sensor, introducing the recent trend of sensor for electronic industry, IC temperature sensor, radiation temperature sensor of surface acoustic wave, optical fiber temperature sensor, a polyelectrolyte film humidity sensor, semiconductor pressure sensor for industrial instrumentation, silicon integration pressure sensor, thick film humidity sensor and its application, photo sensor reflection type, and color sensor. It also deals with sensor for FA, sensor for a robot and sensor for the chemical industry.

  14. Pitch dependence of the tolerance of CMOS monolithic active pixel sensors to non-ionizing radiation

    International Nuclear Information System (INIS)

    Doering, D.; Deveaux, M.; Domachowski, M.; Fröhlich, I.; Koziel, M.; Müntz, C.; Scharrer, P.; Stroth, J.

    2013-01-01

    CMOS monolithic active pixel sensors (MAPS) have demonstrated excellent performance as tracking detectors for charged particles. They provide an outstanding spatial resolution (a few μm), a detection efficiency of ≳99.9%, very low material budget (0.05%X 0 ) and good radiation tolerance (≳1Mrad, ≳10 13 n eq /cm 2 ) (Deveaux et al. [1]). This makes them an interesting technology for various applications in heavy ion and particle physics. Their tolerance to bulk damage was recently improved by using high-resistivity (∼1kΩcm) epitaxial layers as sensitive volume (Deveaux et al. [1], Dorokhov et al. [2]). The radiation tolerance of conventional MAPS is known to depend on the pixel pitch. This is as a higher pitch extends the distance, which signal electrons have to travel by thermal diffusion before being collected. Increased diffusion paths turn into a higher probability of loosing signal charge due to recombination. Provided that a similar effect exists in MAPS with high-resistivity epitaxial layer, it could be used to extend their radiation tolerance further. We addressed this question with MIMOSA-18AHR prototypes, which were provided by the IPHC Strasbourg and irradiated with reactor neutrons. We report about the results of this study and provide evidences that MAPS with 10μm pixel pitch tolerate doses of ≳3×10 14 n eq /cm 2

  15. A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process

    Energy Technology Data Exchange (ETDEWEB)

    Hemperek, Tomasz, E-mail: hemperek@uni-bonn.de; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

    2015-10-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

  16. Study of optically stimulated luminescence (OSL) for radiation detection. Application to an optical fibre γ-radiation sensor

    International Nuclear Information System (INIS)

    Roy, O.

    1998-01-01

    This work shows up the usefulness of the Optically Stimulated Luminescence (OSL) to resolve radioprotection problems. We study the use of OSL as a gamma dosimetric technique with respect to the ALARA's concept (As Low As Reasonably Achievable). A new approach based on optical fibers and luminescent materials showing OSL properties (closely related to Thermoluminescence phenomena) is presented in order to improve the remote real time dosimetry monitoring. Like thermoluminescent materials (TLD), OSL materials can trap charges under an irradiation (UV, X, γ,...). Instead of heating, the charges trapped are released by light stimulation and produce a visible luminescence which amount is proportional to trap the 'data stored' left by irradiation, enabling the dose measurement. The OSL phenomenon offers the same advantages as TLD plus the interesting possibility of a remote optical stimulation. The end-user objective deals with the development of a γ-radiation Optical FIber Sensor (OFS) for dose measurement which can offer new functionalities based on OSL materials coupled with an optical fiber. Rare earth doped Alkaline Earth Sulphides (AES), BAFX:EU 2+ (X = Cl, Br, I) and halogen alkaline have been studied (crystalline form, synthesis techniques, influence of dopants and color centers). Their characteristics are presented and extensively discussed. A specific experimental set-up to characterise various OSL phosphors has been developed. It allows the study of sensitivity, linearity, time decay behaviour of OSL signal and zeroing time. A joint study of OSL and TL has shown the technical limitations as well as the thermal fading and the origin of the long zeroing time. An Optical Fiber Sensor (OFS) based on OSL and using MgS:Sm has been developed for practical applications on nuclear fields. Its specifications are presented and discussed, moreover improvements are proposed. (author)

  17. Study of New Silicon Sensors for Experiments at Future Particle Colliders

    CERN Document Server

    Muñoz Sánchez, Francisca Javiela

    In this work, two new technologies for future tracker detectors at future colliders are studied. In addition, the characterization techniques are described and the obtained results are presented. On one side, we studied two-dimensional position-sensitive microstrip sensors. This sensors use a resistive material as electrode instead of the standard metallic one. In this way, using a single sensor we can get information about two coordinates of a particle hit. On the other side, we studied double-sided double-type 3D pixel sensors. This sensors are manufactured in 3D technology instead of in the planar technology. They show more radiation hardness and require less energy to be efficiently operated than sensors manufactured in planar technology. With this work, we demonstrate the resistive microstrip sensors functionality as particle detector and the radiation hardness of 3D pixel detectors has been evaluated.

  18. Development and radiation evaluation of mobile station for personnel monitoring system based on indigenous plastic scintillator sensor rods

    International Nuclear Information System (INIS)

    Chaudhary, H.S.; Parihar, A.; Senwar, K.R.; Prakash, V.; Rathore, A.S.

    2018-01-01

    The Mobile Station for Personnel Monitoring (MSPM) system has been designed and developed for rapid screening of personnel with respect to radiation contamination during nuclear or radiological emergency; it can also be used for prevention of illicit movement of radioactive sources. The objective was to develop a modular, transportable and easily deployable gamma portal monitoring system based on indigenous DLJ developed plastic scintillator sensors. The Gamma radiation response of the system is presented here

  19. A radiation-hard dual-channel 12-bit 40 MS/s ADC prototype for the ATLAS liquid argon calorimeter readout electronics upgrade at the CERN LHC

    Energy Technology Data Exchange (ETDEWEB)

    Kuppambatti, J. [Columbia University, Dept. of Electrical Engineering, New York, NY (United States); Ban, J. [Columbia University, Nevis Laboratories, Irvington, NY (United States); Andeen, T., E-mail: tandeen@utexas.edu [Columbia University, Nevis Laboratories, Irvington, NY (United States); Brown, R.; Carbone, R. [Columbia University, Nevis Laboratories, Irvington, NY (United States); Kinget, P. [Columbia University, Dept. of Electrical Engineering, New York, NY (United States); Brooijmans, G.; Sippach, W. [Columbia University, Nevis Laboratories, Irvington, NY (United States)

    2017-05-21

    The readout electronics upgrade for the ATLAS Liquid Argon Calorimeters at the CERN Large Hadron Collider requires a radiation-hard ADC. The design of a radiation-hard dual-channel 12-bit 40 MS/s pipeline ADC for this use is presented. The design consists of two pipeline A/D channels each with four Multiplying Digital-to-Analog Converters followed by 8-bit Successive-Approximation-Register analog-to-digital converters. The custom design, fabricated in a commercial 130 nm CMOS process, shows a performance of 67.9 dB SNDR at 10 MHz for a single channel at 40 MS/s, with a latency of 87.5 ns (to first bit read out), while its total power consumption is 50 mW/channel. The chip uses two power supply voltages: 1.2 and 2.5 V. The sensitivity to single event effects during irradiation is measured and determined to meet the system requirements.

  20. First bulk and surface results for the ATLAS ITk Strip stereo annulus sensors

    CERN Document Server

    Hunter, Robert Francis Holub; The ATLAS collaboration; Affolder, Tony; Bohm, Jan; Botte, James Michael; Ciungu, Bianca; Dette, Karola; Dolezal, Zdenek; Escobar, Carlos; Fadeyev, Vitaliy

    2018-01-01

    A novel microstrip sensor geometry, the stereo annulus, has been developed for use in the end-cap of the ATLAS experiment's strip tracker upgrade at the HL-LHC. Its first implementation is in the ATLAS12EC sensors a large-area, radiation-hard, single-sided, ac-coupled, \

  1. Accompanying of parameters of color, brightness and hardness on polymeric films coated with pigmented inks cured by different radiation doses of ultraviolet light

    International Nuclear Information System (INIS)

    Bardi, M.A.G.; Machado, L.D.B.

    2011-01-01

    Complete text of publication follows. In the search for alternatives to traditional paint systems containing solvents, the curing process of polymer coatings by ultraviolet (UV) light has been widely studied and discussed, specially because of their high content of solids and null emission of VOCs. Radiation curing is defined as the conversion of a reactive liquid into a solid through polymerization and crosslinking reactions between the species, promoted by the interaction of the chemical system with the incident ionizing radiation. The appearance of the coated object (e.g., color, gloss) is a complex function of the light incident on the object, the optical scattering characteristic of the material, and human perception. Pigments are very fine powders being nearly insoluble in binders and solvents, but provide color and the ability to hide the underlying surface. In this context, this paper aims to investigate variations on color, brightness and hardness of UV-cured pigmented coatings by different doses. When it comes to irradiation exposition, the incorporation of pigments can preferentially cause its reflection or absorption of the incident radiation. Reflection usually occurs at the pigment surface within the resin so that the radiation has to pass through the top layers twice. Some degradation can, therefore, occur at the surface, and this is why materials frequently lose gloss on exposure.

  2. A novel sensor array for field based ocular ultraviolet radiation measurements

    International Nuclear Information System (INIS)

    Fleming, D. P.; Walsh, J. E.; Moore, L. A.; Bergmanson, J. P.; McMahon, D.

    2006-01-01

    The intensification of terrestrial solar ultraviolet radiation (UVR) due to the diminution of the ozone layer has promoted a variety of research into establishing the impact of this elevated potential dose of UVR on biological tissues. Certain anterior ocular tissues have been found to be susceptible to damage by incident UVR and potentially blinding diseases such as pterygium are thought to be a direct result of absorbed UVR at the nasal limbus. There is a need for more accurate quantification and localisation of incident UVR at the anterior ocular surface. A novel solar blind photodiode sensor array system has been designed, constructed and tested for this purpose. Initial measurements to quantify the irradiance across the anterior ocular surface within the latitudes known as the 'pterygium belt' provide us with a set of core data for different head orientations and tilt angles and indicate the accuracy and stability of the system. (authors)

  3. Fabrication and optimization of a fiber-optic radiation sensor for proton beam dosimetry

    International Nuclear Information System (INIS)

    Jang, K.W.; Yoo, W.J.; Seo, J.K.; Heo, J.Y.; Moon, J.; Park, J.-Y.; Hwang, E.J.; Shin, D.; Park, S.-Y.; Cho, H.-S.; Lee, B.

    2011-01-01

    In this study, we fabricated a fiber-optic radiation sensor for proton therapy dosimetry and measured the output and the peak-to-plateau ratio of scintillation light with various kinds of organic scintillators in order to select an organic scintillator appropriate for measuring the dose of a proton beam. For the optimization of an organic scintillator, the linearity between the light output and the stopping power of a proton beam was evaluated for two different diameters of the scintillator, and the angular dependency and standard deviation of the light pulses were investigated for four different scintillator lengths. We also evaluated the linearity between the light output and the dose rate and monitor units of a proton generator, respectively. The relative depth-dose curve of the proton beam was obtained and corrected using Birk's theory.

  4. Photon multiplicity in the hard radiation of 150 GeV electrons in an aligned germanium crystal

    International Nuclear Information System (INIS)

    Belkacem, A.; Chevallier, M.; Gaillard, M.J.; Genre, R.; Kirsch, R.; Poizat, J.C.; Remillieux, J.; Bologna, G.; Peigneux, J.P.; Sillou, D.; Spighel, M.; Cue, N.; Kimball, J.C.; Marsh, B.B.; Sun, C.R.

    1988-01-01

    Mean values m of photon multiplicity in the radiation of 150 GeV electrons directed at and near the axis of a 0.185 mm thick Ge crystal cooled to 100 K have been deduced from the measurements of pair conversion probabilities. Depending on the distribution of multiplicity assumed, values of m ranging from 3.8 to 4.3 are obtained for the previously reported anomalous radiation peak. (orig.)

  5. A comprehensive remote automated mobile robot framework for deployment of compact radiation sensors and campaign management

    International Nuclear Information System (INIS)

    Mukherjee, J.K.

    2005-01-01

    Remote controlled on-line sensing with compact radiation sensors for interactive, fast contamination mapping and source localization needs integrated command control and machine intelligence supported operation. The combination of remote operation capability and automation of sensing needs a comprehensive framework encompassing precision real-time remote controlled agent, reliable remote communication techniques for unified command and sensory data exchange with optimized bandwidth allocation between the real time low volume as well as moderate speed bulk data transfer and data abstraction for seamless multi-domain abstraction in single environment. The paper describes an indigenously developed comprehensive framework that achieves vertical integration of layered services complex functions, explains its implementation and details its operation with examples of on-line application sessions. Several important features like precise remote control of sensor trajectory generation in real time by digital signal processing, prediction and visualization of remote agent locus and attitude, spatial modeling of fixed features of the monitored region and localization of activity source over mapped region have been dealt with. (author)

  6. Radiation effects on active pixel sensors (APS); Effets de l'irradiation sur les capteurs a pixels actifs (APS)

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, M.; David, J.P. [ONERA-CERT/, 31 - Toulouse (France)

    1999-07-01

    Active pixel sensor (APS) is a new generation of image sensors which presents several advantages relatively to charge coupled devices (CCDs) particularly for space applications (APS requires only 1 voltage to operate which reduces considerably current consumption). Irradiation was performed using {sup 60}Co gamma radiation at room temperature and at a dose rate of 150 Gy(Si)/h. 2 types of APS have been tested: photodiode-APS and photoMOS-APS. The results show that photoMOS-APS is more sensitive to radiation effects than photodiode-APS. Important parameters of image sensors like dark currents increase sharply with dose levels. Nevertheless photodiode-APS sensitivity is one hundred time lower than photoMOS-APS sensitivity.

  7. Radiation effects on active pixel sensors (APS); Effets de l'irradiation sur les capteurs a pixels actifs (APS)

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, M; David, J P [ONERA-CERT/, 31 - Toulouse (France)

    1999-07-01

    Active pixel sensor (APS) is a new generation of image sensors which presents several advantages relatively to charge coupled devices (CCDs) particularly for space applications (APS requires only 1 voltage to operate which reduces considerably current consumption). Irradiation was performed using {sup 60}Co gamma radiation at room temperature and at a dose rate of 150 Gy(Si)/h. 2 types of APS have been tested: photodiode-APS and photoMOS-APS. The results show that photoMOS-APS is more sensitive to radiation effects than photodiode-APS. Important parameters of image sensors like dark currents increase sharply with dose levels. Nevertheless photodiode-APS sensitivity is one hundred time lower than photoMOS-APS sensitivity.

  8. Silicon sensor technologies for ATLAS IBL upgrade

    CERN Document Server

    Grenier, P; The ATLAS collaboration

    2011-01-01

    New pixel sensors are currently under development for ATLAS Upgrades. The first upgrade stage will consist in the construction of a new pixel layer that will be installed in the detector during the 2013 LHC shutdown. The new layer (Insertable-B-Layer, IBL) will be inserted between the inner most layer of the current pixel detector and the beam pipe at a radius of 3.2cm. The expected high radiation levels require the use of radiation hard technology for both the front-end chip and the sensor. Two different pixel sensor technologies are envisaged for the IBL. The sensor choice will occur in July 2011. One option is developed by the ATLAS Planar Pixel Sensor (PPS) Collaboration and is based on classical n-in-n planar silicon sensors which have been used for the ATLAS Pixel detector. For the IBL, two changes were required: The thickness was reduced from 250 um to 200 um to improve the radiation hardness. In addition, so-called "slim edges" were designed to reduce the inactive edge of the sensors from 1100 um to o...

  9. Sensor

    OpenAIRE

    Gleeson, Helen; Dierking, Ingo; Grieve, Bruce; Woodyatt, Christopher; Brimicombe, Paul

    2015-01-01

    An electrical temperature sensor (10) comprises a liquid crystalline material (12). First and second electrically conductive contacts (14), (16), having a spaced relationship there between, contact the liquid crystalline material (12). An electric property measuring device is electrically connected to the first and second contacts (14), (16) and is arranged to measure an electric property of the liquid crystalline material (12). The liquid crystalline material (12) has a transition temperatur...

  10. Jets at low Q2 at HERA and radiation damage studies for silicon sensors for the XFEL

    International Nuclear Information System (INIS)

    Perrey, Hanno

    2011-06-01

    irradiated and the properties of the Si-SiO 2 interface under high irradiation have been studied using current versus voltage (I/V), capacitance versus voltage (C/V), and thermally depolarization relaxation current (TDRC) measurements. In addition to a strong increase and subsequent decrease of the interface current and the flat-band voltage as function of dose, strong hysteresis effects have been found. The data can be qualitatively described by a model which includes interface traps and fixed oxide charges. The model predictions were used in combination with in C/V and TDRC measurements to separately determine the different types of traps present at the Si-SiO 2 interface and the charges in the SiO 2 . The parameters extracted in this studies are to be implemented into simulations with the goal of reproducing the measurements and later use them for the design of radiation hard sensors for the AGIPD project. (orig.)

  11. Jets at low Q{sup 2} at HERA and radiation damage studies for silicon sensors for the XFEL

    Energy Technology Data Exchange (ETDEWEB)

    Perrey, Hanno

    2011-06-15

    exploit the sensitivity of the low Q{sup 2} jet data in QCD PDF fits and in fits to extract values of {alpha}{sub s}. In the second part of this thesis, a study of radiation damage of silicon sensors by 12 keV X-rays for doses up to 1GGy is presented. For this study, an irradiation facility has been set up at Hasylab at Desy. Test structures (gate-controlled diodes) have been irradiated and the properties of the Si-SiO{sub 2} interface under high irradiation have been studied using current versus voltage (I/V), capacitance versus voltage (C/V), and thermally depolarization relaxation current (TDRC) measurements. In addition to a strong increase and subsequent decrease of the interface current and the flat-band voltage as function of dose, strong hysteresis effects have been found. The data can be qualitatively described by a model which includes interface traps and fixed oxide charges. The model predictions were used in combination with in C/V and TDRC measurements to separately determine the different types of traps present at the Si-SiO{sub 2} interface and the charges in the SiO{sub 2}. The parameters extracted in this studies are to be implemented into simulations with the goal of reproducing the measurements and later use them for the design of radiation hard sensors for the AGIPD project. (orig.)

  12. Large area CMOS image sensors

    International Nuclear Information System (INIS)

    Turchetta, R; Guerrini, N; Sedgwick, I

    2011-01-01

    CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

  13. A 0.18μm CMOS low-power radiation sensor for UWB wireless transmission

    International Nuclear Information System (INIS)

    Crepaldi, M; Demarchi, D; Gabrielli, A; Khan, A; Pikhay, E; Roizin, Y; Villani, G; Zhang, Z

    2012-01-01

    The paper describes the design of a floating gate MOS sensor embedded in a readout CMOS element, used as a radiation monitor. A maximum sensitivity of 1 mV/rad is estimated within an absorbed dose range from 1 to 10 krad. The paper shows in particular the design of a microelectronic circuit that includes the floating gate sensor, an oscillator, a modulator, a transmitter and an integrated antenna. A prototype of the circuit has recently been simulated, fabricated and tested exploiting a commercial 180 nm, 4 metal CMOS technology. Some simulation results are presented along with a measurement of the readout circuit response to an input voltage swing. Given the small estimated area of the complete chip prototype, that is less than 1 mm 2 , the chip fits a large variety of applications, from spot radiation monitoring systems in medicine to punctual measurements or radiation level in High-Energy Physics experiments.

  14. Wireless and chip-less passive radiation sensors for high dose monitoring

    International Nuclear Information System (INIS)

    Debourg, E.; Aubert, H.; Pons, P.; Augustyniak, I.; Knapkiewicz, P.; Dziuban, J.; Matusiak, M.; Olszacki, M.

    2015-01-01

    The safety of nuclear infrastructures may involve the monitoring of many parameters in harsh environments (high radiation level, high temperature, high pressure,..). If technological solutions exist for transducers part in such environments, the electronic part used in reader is not appropriate and still a challenging task. Well-known solutions to remove the electronic part from the harsh environment consist of connecting the transducer and the reader by long electrical wires or performing ex situ remote sensing. However wires may practically be difficult to implement while ex situ measurements are not compatible with on line monitoring. Wireless and passive sensors working in harsh environments could be an appropriate solution for the remote sensing of critical parameters. Passive sensors without electronics in the sensing unit are available (e.g., SAW sensors) but they suffer from short reading range (typically lower than 10 meters). In order to overcome this range limitation a new class of electromagnetic transducers was developed in the mid-2000's. The operating principle is based on the modification of the properties of high-frequency (>> 1 GHz) passive electromagnetic devices by the quantity to be measured. Based on this principle a wide range of sensing properties can be addressed and a large number of materials can be chosen. Moreover the use of high frequency allows reducing the size of the sensor elements (antenna, transducer) and enhancing the immunity to multi-path. Several principles of RF transducers have been already validated by LAAS-CNRS (e;g; pressure, temperature, stress) as well as radar-based solution for the wireless long-range sensors interrogation. The sensor dosimeter exploit here the known property of Hydrogen-Pressure Dosimeters (HPD) for which the polymer material dehydrogenates under nuclear irradiation. The transducer principle is described. The irradiation will generate the out-gazing (hydrogen) of the polymer inside a micro

  15. Wireless and chip-less passive radiation sensors for high dose monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Debourg, E.; Aubert, H.; Pons, P. [CNRS, LAAS, 7 Av. Roche, F-31400 Toulouse (France); Univ de Toulouse, LAAS, F-31400 Toulouse (France); Augustyniak, I.; Knapkiewicz, P.; Dziuban, J. [Wroclaw University of Technology, Wroclaw (Poland); Matusiak, M.; Olszacki, M. [National Centre for Nuclear Research, Otwock (Poland)

    2015-07-01

    The safety of nuclear infrastructures may involve the monitoring of many parameters in harsh environments (high radiation level, high temperature, high pressure,..). If technological solutions exist for transducers part in such environments, the electronic part used in reader is not appropriate and still a challenging task. Well-known solutions to remove the electronic part from the harsh environment consist of connecting the transducer and the reader by long electrical wires or performing ex situ remote sensing. However wires may practically be difficult to implement while ex situ measurements are not compatible with on line monitoring. Wireless and passive sensors working in harsh environments could be an appropriate solution for the remote sensing of critical parameters. Passive sensors without electronics in the sensing unit are available (e.g., SAW sensors) but they suffer from short reading range (typically lower than 10 meters). In order to overcome this range limitation a new class of electromagnetic transducers was developed in the mid-2000's. The operating principle is based on the modification of the properties of high-frequency (>> 1 GHz) passive electromagnetic devices by the quantity to be measured. Based on this principle a wide range of sensing properties can be addressed and a large number of materials can be chosen. Moreover the use of high frequency allows reducing the size of the sensor elements (antenna, transducer) and enhancing the immunity to multi-path. Several principles of RF transducers have been already validated by LAAS-CNRS (e;g; pressure, temperature, stress) as well as radar-based solution for the wireless long-range sensors interrogation. The sensor dosimeter exploit here the known property of Hydrogen-Pressure Dosimeters (HPD) for which the polymer material dehydrogenates under nuclear irradiation. The transducer principle is described. The irradiation will generate the out-gazing (hydrogen) of the polymer inside a micro

  16. Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects.

    Science.gov (United States)

    Xue, Yuanyuan; Wang, Zujun; Chen, Wei; Liu, Minbo; He, Baoping; Yao, Zhibin; Sheng, Jiangkun; Ma, Wuying; Dong, Guantao; Jin, Junshan

    2017-11-30

    Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. The dark signal was measured pre- and post-radiation, with the dark signal post irradiation showing a remarkable increase. A theoretical method of dark signal distribution pre- and post-radiation is used to analyze the degradation mechanisms of the dark signal distribution. The theoretical results are in good agreement with experimental results. This research would provide a good understanding of the proton radiation effects on the CIS and make it possible to predict the dark signal distribution of the CIS under the complex proton radiation environments.

  17. Study of fast electrons from hard-X radiation; Etude des electrons rapides a partir du rayonnement X-dur

    Energy Technology Data Exchange (ETDEWEB)

    Arslanbekov, R.

    1995-12-19

    The goal of this thesis is the study of fast electron dynamics by means of the hard X-ray diagnosis installed in TORE SUPRA and numerical simulations. Fast electrons are generated in the plasma in the presence of the injected lower hybrid (LH) waves. Two aspects are studied in detail: the lower hybrid wave propagation and absorption in a periodically perturbed media and 2-D Fokker-Planck modelling of the fast electron dynamics in the presence of the LH power. Ripple effects on lower hybrid wave propagation and absorption are investigated using the ray tracing technique. A cylindrical equilibrium is first studied and a strong modification of the ray dynamics is predicted. Calculations are carried out in a real toroidal geometry corresponding to TORE SUPRA. It is shown that the lack of toroidal axisymmetry of the magnetic field may result in a modification of the ray evolution even if the global ray evolution is governed by the larger poloidal inhomogeneity. Simulation of LH experiments are performed for TORE SUPRA tokamak which has a large magnetic ripple (7% at the plasma edge). By considering ripple perturbation in LH current drive simulations, a better agreement is found with experimental results, in particular with the hard-X spectra and the current density profiles. In the second part of the thesis, a 2-D modeling of the fast electron dynamics in the velocity phase space is considered, based on the 2-D relativistic electron Fokker-Planck equation. Electron distribution functions obtained are used to calculate non-thermal Bremsstrahlung emission for different TORE SUPRA shots in a wide range of experimental conditions. (J.S.). 168 refs., 93 figs., 1 tab., 3 appendix.

  18. Testing of Sapphire Optical Fiber and Sensors in Intense Radiation Fields When Subjected to Very High Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Blue, Thomas [The Ohio State Univ., Columbus, OH (United States); Windl, Wolfgang [The Ohio State Univ., Columbus, OH (United States)

    2017-12-15

    The primary objective of this project was to determine the optical attenuation and signal degradation of sapphire optical fibers & sensors (temperature & strain), in-situ, operating at temperatures up to 1500°C during reactor irradiation through experiments and modeling. The results will determine the feasibility of extending sapphire optical fiber-based instrumentation to extremely high temperature radiation environments. This research will pave the way for future testing of sapphire optical fibers and fiber-based sensors under conditions expected in advanced high temperature reactors.

  19. Description of radiation damage in diamond sensors using an effective defect model

    Energy Technology Data Exchange (ETDEWEB)

    Kassel, Florian [Institute for Experimental Nuclear Physics (IEKP), KIT, Karlsruhe (Germany); CERN, Meyrin (Switzerland); Guthoff, Moritz; Dabrowski, Anne [CERN, Meyrin (Switzerland); Boer, Wim de [Institute for Experimental Nuclear Physics (IEKP), KIT, Karlsruhe (Germany)

    2017-11-15

    The Beam Condition Monitoring Leakage (BCML) system is a beam monitoring device in the CMS experiment at the LHC consisting of 32 poly-crystalline (pCVD) diamond sensors. The BCML sensors, located in rings around the beam, are exposed to high particle rates originating from the colliding beams. These particles cause lattice defects, which act as traps for the ionized charge carrier leading to a reduced charge collection efficiency (CCE). The radiation induced CCE degradation was, however, much more severe than expected from low rate laboratory measurements. Measurement and simulations presented in this paper show that this discrepancy is related to the rate of incident particles. At high particle rates, the trapping rate of the ionization is strongly increased compared to the detrapping rate leading to an increased build-up of space charge. This space charge locally reduces the internal electric field increasing the trapping rate and hence reducing the CCE even further. In order to connect these macroscopic measurements with the microscopic defects acting as traps for the ionization charge, the TCAD simulation program SILVACO was used. It allows to introduce the defects as effective donor and acceptor levels, and can calculate the electric field from Transient Current Technique (TCT) signals and CCE as a function of the effective trap properties, like density, energy level, and trapping cross section. After each irradiation step, these properties were fitted to the data on the electric field from the TCT signals and CCE. Two effective acceptor and donor levels were needed to fit the data after each step. It turned out that the energy levels and cross sections could be kept constant and the trap density was proportional to the cumulative fluence of the irradiation steps. The highly non-linear rate dependent diamond polarization and the resulting signal loss can be simulated using this effective defect model and is in agreement with the measurement results

  20. Description of radiation damage in diamond sensors using an effective defect model

    International Nuclear Information System (INIS)

    Kassel, Florian; Guthoff, Moritz; Dabrowski, Anne; Boer, Wim de

    2017-01-01

    The Beam Condition Monitoring Leakage (BCML) system is a beam monitoring device in the CMS experiment at the LHC consisting of 32 poly-crystalline (pCVD) diamond sensors. The BCML sensors, located in rings around the beam, are exposed to high particle rates originating from the colliding beams. These particles cause lattice defects, which act as traps for the ionized charge carrier leading to a reduced charge collection efficiency (CCE). The radiation induced CCE degradation was, however, much more severe than expected from low rate laboratory measurements. Measurement and simulations presented in this paper show that this discrepancy is related to the rate of incident particles. At high particle rates, the trapping rate of the ionization is strongly increased compared to the detrapping rate leading to an increased build-up of space charge. This space charge locally reduces the internal electric field increasing the trapping rate and hence reducing the CCE even further. In order to connect these macroscopic measurements with the microscopic defects acting as traps for the ionization charge, the TCAD simulation program SILVACO was used. It allows to introduce the defects as effective donor and acceptor levels, and can calculate the electric field from Transient Current Technique (TCT) signals and CCE as a function of the effective trap properties, like density, energy level, and trapping cross section. After each irradiation step, these properties were fitted to the data on the electric field from the TCT signals and CCE. Two effective acceptor and donor levels were needed to fit the data after each step. It turned out that the energy levels and cross sections could be kept constant and the trap density was proportional to the cumulative fluence of the irradiation steps. The highly non-linear rate dependent diamond polarization and the resulting signal loss can be simulated using this effective defect model and is in agreement with the measurement results

  1. Sub-aquatic response of a scintillator, fibre optic and silicon photomultiplier based radiation sensor

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, Sarah F., E-mail: s.f.jackson@lancaster.ac.uk [Engineering Department, Lancaster University, Lancaster (United Kingdom); Monk, Stephen D., E-mail: s.monk@lancaster.ac.uk [Engineering Department, Lancaster University, Lancaster (United Kingdom); Stanley, Steven J., E-mail: steven.j.stanley@nnl.co.uk [National Nuclear Laboratory, A709 Springfields, Preston (United Kingdom); Lennox, Kathryn, E-mail: kathryn.lennox@nnl.co.uk [National Nuclear Laboratory, A709 Springfields, Preston (United Kingdom)

    2014-07-01

    We describe an attempt at the utilisation of two low level light sensors to improve on the design of a dose monitoring system, specifically for underwater applications with consideration for the effects of water attenuation. The gamma radiation ‘RadLine{sup ®}’ detector consists of an inorganic scintillating crystal coupled to a fibre optic cable which transports scintillation photons, up to hundreds of metres, to an optical sensor. Analysed here are two contemporary technologies; SensL's MiniSL a silicon photomultiplier (SiPM) and a Sens-Tech photon counting photomultiplier tube (PMT). A clinical radiotherapy linear accelerator (linac) is implemented as test beam, subjecting the RadLine{sup ®} to a highly controlled dose rate (ranging from 0 Sv h{sup −1} to 320 Sv h{sup −1}), averaging at 2 MeV in energy. The RadLine's underwater dose monitoring capabilities are tested with the aid of epoxy resin ‘solid water’ phantom blocks, used as a substitute for water. Our results show that the MiniSL SiPM is unsuitable for this application due to extremely high background noise levels, however the Sens-Tech PMT performs satisfactorily and the detected dose rate due to the effects of water attenuation compares strongly with MCNP simulation data and NIST database values. We conclude that the PMT shows promise for its ultimate use in the First Generation Magnox Storage Pond (FGMSP) on the Sellafield site. - Highlights: • RadLine{sup ®} consists of a scintillating crystal coupled to a fibre optic cable and photon detector. • Here the dose monitoring system is trialled with SiPM and PMT type photon detectors. • A clinical linear accelerator (linac) is used as a test beam. • Sub-aquatic response is compared to Monte Carlo simulations and the NIST database.

  2. Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment

    Energy Technology Data Exchange (ETDEWEB)

    Kimura, K., E-mail: kimihiko@hep.phys.titech.ac.jp [Institute of Science and Engineering, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8551 (Japan); Yamaguchi, D.; Motohashi, K. [Institute of Science and Engineering, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8551 (Japan); Nakamura, K.; Unno, Y. [Institute of Particle and Nuclear Study, KEK, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Jinnouchi, O. [Institute of Science and Engineering, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8551 (Japan); Altenheiner, S. [Experimentelle Physik IV, Technische Universität Dortmund, 44221 Dortmund (Germany); Blue, A. [School of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, Scotland (United Kingdom); Bomben, M. [CNRS/IN2P3 (France); Laboratoire de physique nucléaire et de hautes energies (LPNHE), Univ. Paris-UMPC, 4 Place Jussieu, 75005 Paris (France); Univ. Paris Diderot (France); Butter, A. [LAL, University Paris-Sud (France); CNRS/IN2P3 (France); Université Paris-Saclay, Orsay (France); Cervelli, A. [Universität Bern, Laboratory for High Energy Physics, Sidlerstrasse 55, CH-3012 Bern (Switzerland); Crawley, S. [School of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, Scotland (United Kingdom); Ducourthial, A. [CNRS/IN2P3 (France); Laboratoire de physique nucléaire et de hautes energies (LPNHE), Univ. Paris-UMPC, 4 Place Jussieu, 75005 Paris (France); Univ. Paris Diderot (France); Gisen, A. [Experimentelle Physik IV, Technische Universität Dortmund, 44221 Dortmund (Germany); Hagihara, M. [Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8751 (Japan); and others

    2016-09-21

    Radiation-tolerant n-in-p planar pixel sensors have been under development in cooperation with Hamamatsu Photonics K.K. (HPK). This is geared towards applications in high-radiation environments, such as for the future Inner Tracker (ITk) placed in the innermost part of the ATLAS detector in the high luminosity LHC (HL-LHC) experiment. Prototypes of those sensors have been produced, irradiated, and evaluated over the last few years. In the previous studies, it was reported that significant drops in the detection efficiency were observed after irradiation, especially under bias structures. The bias structures are made up of poly-Si or Al bias rails and poly-Si bias resistors. The structure is implemented on the sensors to allow quality checks to be performed before the bump-bonding process, and to ensure that charge generated in floating pixels due to non-contacting or missing bump-bonds is dumped in a controlled way in order to avoid noise. To minimize the efficiency drop, several new pixel structures have been designed with bias rails and bias resistors relocated. Several test beams have been carried out to evaluate the drops in the detection efficiency of the new sensor structures after irradiation. Newly developed sensor modules were irradiated with proton-beams at the Cyclotron and Radio-Isotope Center (CYRIC) in Tohoku University to see the effect of sensor-bulk damage and surface charge-up. An irradiation with γ-rays was also carried out at Takasaki Advanced Radiation Research Center, with the goal of decoupling the effect of surface charge-up from that of bulk damage. Those irradiated sensors have been evaluated with particle beams at DESY and CERN. Comparison between different sensor structures confirmed significant improvements in minimizing efficiency loss under the bias structures after irradiation. The results from γ-irradiation also enabled cross-checking the results of a semiconductor technology simulation program (TCAD). - Highlights: • The

  3. Nighttime Infrared radiative cooling and opacity inferred by REMS Ground Temperature Sensor Measurements

    Science.gov (United States)

    Martín-Torres, Javier; Paz Zorzano, María; Pla-García, Jorge; Rafkin, Scot; Lepinette, Alain; Sebastián, Eduardo; Gómez-Elvira, Javier; REMS Team

    2013-04-01

    Due to the low density of the Martian atmosphere, the temperature of the surface is controlled primarily by solar heating, and infrared cooling to the atmosphere and space, rather than heat exchange with the atmosphere. In the absence of solar radiation the infrared (IR) cooling, and then the nighttime surface temperatures, are directly controlled by soil termal inertia and atmospheric optical thickness (τ) at infrared wavelengths. Under non-wind conditions, and assuming no processes involving latent heat changes in the surface, for a particular site where the rover stands the main parameter controlling the IR cooling will be τ. The minimal ground temperature values at a fixed position may thus be used to detect local variations in the total dust/aerosols/cloud tickness. The Ground Temperature Sensor (GTS) and Air Temperature Sensor (ATS) in the Rover Environmental Monitoring Station (REMS) on board the Mars Science Laboratory (MSL) Curiosity rover provides hourly ground and air temperature measurements respectively. During the first 100 sols of operation of the rover, within the area of low thermal inertia, the minimal nightime ground temperatures reached values between 180 K and 190 K. For this season the expected frost point temperature is 200 K. Variations of up to 10 K have been observed associated with dust loading at Gale at the onset of the dust season. We will use these measurements together with line-by-line radiative transfer simulations using the Full Transfer By Optimized LINe-by-line (FUTBOLIN) code [Martín-Torres and Mlynczak, 2005] to estimate the IR atmospheric opacity and then dust/cloud coverage over the rover during the course of the MSL mission. Monitoring the dust loading and IR nightime cooling evolution during the dust season will allow for a better understanding of the influence of the atmosphere on the ground temperature and provide ground truth to models and orbiter measurements. References Martín-Torres, F. J. and M. G. Mlynczak

  4. Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

    CERN Document Server

    Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

  5. Improving radiation hardness in space-based Charge-Coupled Devices through the narrowing of the charge transfer channel

    Science.gov (United States)

    Hall, D. J.; Skottfelt, J.; Soman, M. R.; Bush, N.; Holland, A.

    2017-12-01

    Charge-Coupled Devices (CCDs) have been the detector of choice for imaging and spectroscopy in space missions for several decades, such as those being used for the Euclid VIS instrument and baselined for the SMILE SXI. Despite the many positive properties of CCDs, such as the high quantum efficiency and low noise, when used in a space environment the detectors suffer damage from the often-harsh radiation environment. High energy particles can create defects in the silicon lattice which act to trap the signal electrons being transferred through the device, reducing the signal measured and effectively increasing the noise. We can reduce the impact of radiation on the devices through four key methods: increased radiation shielding, device design considerations, optimisation of operating conditions, and image correction. Here, we concentrate on device design operations, investigating the impact of narrowing the charge-transfer channel in the device with the aim of minimising the impact of traps during readout. Previous studies for the Euclid VIS instrument considered two devices, the e2v CCD204 and CCD273, the serial register of the former having a 50 μm channel and the latter having a 20 μm channel. The reduction in channel width was previously modelled to give an approximate 1.6× reduction in charge storage volume, verified experimentally to have a reduction in charge transfer inefficiency of 1.7×. The methods used to simulate the reduction approximated the charge cloud to a sharp-edged volume within which the probability of capture by traps was 100%. For high signals and slow readout speeds, this is a reasonable approximation. However, for low signals and higher readout speeds, the approximation falls short. Here we discuss a new method of simulating and calculating charge storage variations with device design changes, considering the absolute probability of capture across the pixel, bringing validity to all signal sizes and readout speeds. Using this method, we

  6. Thermal Radiometer Signal Processing Using Radiation Hard CMOS Application Specific Integrated Circuits for Use in Harsh Planetary Environments

    Science.gov (United States)

    Quilligan, G.; DuMonthier, J.; Aslam, S.; Lakew, B.; Kleyner, I.; Katz, R.

    2015-01-01

    Thermal radiometers such as proposed for the Europa Clipper flyby mission require low noise signal processing for thermal imaging with immunity to Total Ionizing Dose (TID) and Single Event Latchup (SEL). Described is a second generation Multi- Channel Digitizer (MCD2G) Application Specific Integrated Circuit (ASIC) that accurately digitizes up to 40 thermopile pixels with greater than 50 Mrad (Si) immunity TID and 174 MeV-sq cm/mg SEL. The MCD2G ASIC uses Radiation Hardened By Design (RHBD) techniques with a 180 nm CMOS process node.

  7. Bread-Board Testing of the Radiation Hard Electron Monitor (RADEM) being developed for the ESA JUICE Mission

    Science.gov (United States)

    Mrigakshi, Alankrita; Hajdas, Wojtek; Marcinkowski, Radoslaw; Xiao, Hualin; Goncalves, Patricia; Pinto, Marco; Pinto, Costa; Marques, Arlindo; Meier, Dirk

    2016-04-01

    The RADEM instrument will serve as the radiation monitor for the JUICE spacecraft. It will characterize the highly dynamic radiation environment of the Jovian system by measuring the energy spectra of energetic electrons and protons up to 40 MeV and 250 MeV, respectively. It will also determine the directionality of 0.3-10 MeV electrons. Further goals include the detection of heavy ions, and the determination of the corresponding LET spectra and dose rates. Here, the tests of the Electron and Proton Telescopes, and the Directionality Detector of the RADEM Bread-Board model are described. The objective of these tests is to validate RADEM design and physical concept applied therein. The tests were performed at various irradiation facilities at the Paul Scherrer Institute (PSI) where energy ranges relevant for space applications can be covered (electrons: ≤100 MeV and protons: ≤230 MeV). The measured values are also compared with GEANT4 Monte-Carlo Simulation results.

  8. A novel epitaxially grown LSO-based thin-film scintillator for micro-imaging using hard synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Douissard, P.A.; Martin, T.; Chevalier, V.; Rack, A. [European Synchrotron Radiat Facil, F-38043 Grenoble, (France); Cecilia, A.; Baumbach, T.; Rack, A. [Karlsruhe Inst Technol ANKA, D-76021 Karlsruhe, (Germany); Couchaud, M. [CEA LETI, F-38054 Grenoble, (France); Dupre, K. [FEE GmbH, D-55743 Idar Oberstein, (Germany); Kuhbacher, M. [Helmholtz Zentrum Berlin Mat and Energie, D-14109 Berlin, (Germany)

    2010-07-01

    The efficiency of high-resolution pixel detectors for hard X-rays is nowadays one of the major criteria which drives the feasibility of imaging experiments and in general the performance of an experimental station for synchrotron-based microtomography and radiography. Here the luminescent screen used for the indirect detection is focused on in order to increase the detective quantum efficiency a novel scintillator based on doped Lu{sub 2}SiO{sub 5} (LSO), epitaxially grown as thin film via the liquid phase epitaxy technique. It is shown that, by using adapted growth and doping parameters as well as a dedicated substrate, the scintillation behaviour of a LSO-based thin crystal together with the high stopping power of the material allows for high-performance indirect X-ray detection. In detail, the conversion efficiency, the radioluminescence spectra, the optical absorption spectra under UV/visible-light and the afterglow are investigated. A set-up to study the effect of the thin-film scintillator's temperature on its conversion efficiency is described as well it delivers knowledge which is important when working with higher photon flux densities and the corresponding high heat load on the material. Additionally, X-ray imaging systems based on different diffraction-limited visible-light optics and CCD cameras using among others LSO-based thin film are compared. Finally, the performance of the LSO thin film is illustrated by imaging a honey bee leg, demonstrating the value of efficient high-resolution computed tomography for life sciences. (authors)

  9. Total ionizing dose radiation hardness of the ATLAS MDT-ASD and the HP-Agilent 0.5 um CMOS process

    CERN Document Server

    Posch, C

    2002-01-01

    A total ionizing dose (TID) test of the MDT-ASD, the ATLAS MDT front-end chip has been performed at the Harvard Cyclotron Lab. The MDT-ASD is an 8-channel drift tube read-out ASIC fabricated in a commercial 0.5 um CMOS process (AMOS14TB). The accumulated TID at the end of the test was 300 krad, delivered by 160 MeV protons at a rate of approximately 70 rad/sec. All 10 irradiated chips retained their full functionality and performance and showed only irrelevantly small changes in device parameters. As the total accumulated dose is substantially higher than the relevant ATLAS Radiation Tolerance Criteria (RTCtid), the results of this test indicate that MDT-ASD meets the ATLAS TID radiation hardness requirements. In addition, the results of this test correspond well with results of a 30 keV gamma TID irradiation test performed by us on an earlier prototype at the CERN x-ray facility as well as with results of other irradiation test on this process found in literature.

  10. Simulation and measurement of total ionizing dose radiation induced image lag increase in pinned photodiode CMOS image sensors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jing [School of Materials Science and Engineering, Xiangtan University, Hunan (China); State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China); Chen, Wei, E-mail: chenwei@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China); Wang, Zujun, E-mail: wangzujun@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China); Xue, Yuanyuan; Yao, Zhibin; He, Baoping; Ma, Wuying; Jin, Junshan; Sheng, Jiangkun; Dong, Guantao [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China)

    2017-06-01

    This paper presents an investigation of total ionizing dose (TID) induced image lag sources in pinned photodiodes (PPD) CMOS image sensors based on radiation experiments and TCAD simulation. The radiation experiments have been carried out at the Cobalt −60 gamma-ray source. The experimental results show the image lag degradation is more and more serious with increasing TID. Combining with the TCAD simulation results, we can confirm that the junction of PPD and transfer gate (TG) is an important region forming image lag during irradiation. These simulations demonstrate that TID can generate a potential pocket leading to incomplete transfer.

  11. Application of «Sensor signal analysis network» complex for distributed, time synchronized analysis of electromagnetic radiation

    Science.gov (United States)

    Mochalov, Vladimir; Mochalova, Anastasia

    2017-10-01

    The paper considers a developing software-hardware complex «Sensor signal analysis network» for distributed and time synchronized analysis of electromagnetic radiations. The areas of application and the main features of the complex are described. An example of application of the complex to monitor natural electromagnetic radiation sources is considered based on the data recorded in VLF range. A generalized functional scheme of stream analysis of signals by a complex functional node is suggested and its application for stream detection of atmospherics, whistlers and tweaks is considered.

  12. Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance

    Energy Technology Data Exchange (ETDEWEB)

    Fadeyev, V., E-mail: fadeyev@ucsc.edu [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Ely, S.; Galloway, Z.; Ngo, J.; Parker, C.; Sadrozinski, H.F.-W. [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Christophersen, M.; Phlips, B.F. [U.S. Naval Research Laboratory, Code 7654, 4555 Overlook Avenue, Southwest Washington, DC 20375 (United States); Pellegrini, G.; Rafi, J.M.; Quirion, D. [Instituto de Microelectrónica de Barcelona, IMB-CNM-CSIC, Bellaterra, Barcelona (Spain); Dalla Betta, G.-F. [INFN and University of Trento, Via Sommarive, 14, 38123 Povo di Trento (Italy); Boscardin, M. [Fondazione Bruno Kessler, Via Sommarive, 18, 38123 Povo di Trento (Italy); Casse, G. [Department of Physics, University of Liverpool, O. Lodge Laboratory, Oxford Street, Liverpool L69 7ZE (United Kingdom); Gorelov, I.; Hoeferkamp, M.; Metcalfe, J.; Seidel, S. [Department of Physics and Astronomy, University of New Mexico, MSC 07 4220, 1919 Lomas Boulevard NE, Albuquerque, NM 87131 (United States); Gaubas, E.; Ceponis, T. [Institute of Applied Research, Vilnius University, Sauletekio 9, LT-10222 Vilnius (Lithuania); and others

    2014-11-21

    We pursue scribe–cleave–passivate (SCP) technology for making “slim edge” sensors. The goal is to reduce the inactive region at the periphery of the devices while maintaining their performance. In this paper we report on two aspects of the current efforts. The first one involves fabrication options for mass production. We describe the automated cleaving tests and a simplified version of SCP post-processing of n-type devices. Another aspect is the radiation resistance of the passivation. We report on the radiation tests of n- and p-type devices with protons and neutrons.

  13. New results on diamond pixel sensors using ATLAS frontend electronics

    International Nuclear Information System (INIS)

    Keil, M.; Adam, W.; Berdermann, E.; Bergonzo, P.; Boer, W. de; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; Doucet, M.; Eijk, B. van; Fallou, A.; Fischer, P.; Fizzotti, F.; Kania, D.; Gan, K.K.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Knoepfle, K.T.; Koeth, T.; Krammer, M.; Logiudice, A.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Perera, L.; Riester, J.L.; Roe, S.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Trischuk, W.; Tromson, D.; Vittone, E.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

    2003-01-01

    Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented

  14. New results on diamond pixel sensors using ATLAS frontend electronics

    CERN Document Server

    Keil, Markus; Berdermann, E; Bergonzo, P; de Boer, Wim; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dulinski, W

    2003-01-01

    Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

  15. New results on diamond pixel sensors using ATLAS frontend electronics

    Energy Technology Data Exchange (ETDEWEB)

    Keil, M. E-mail: markus.keil@cern.ch; Adam, W.; Berdermann, E.; Bergonzo, P.; Boer, W. de; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; Doucet, M.; Eijk, B. van; Fallou, A.; Fischer, P.; Fizzotti, F.; Kania, D.; Gan, K.K.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Knoepfle, K.T.; Koeth, T.; Krammer, M.; Logiudice, A.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Perera, L.; Riester, J.L.; Roe, S.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Trischuk, W.; Tromson, D.; Vittone, E.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M

    2003-03-21

    Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

  16. New results on diamond pixel sensors using ATLAS frontend electronics

    Science.gov (United States)

    Keil, M.; Adam, W.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; Doucet, M.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Kania, D.; Gan, K. K.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Perera, L.; Riester, J. L.; Roe, S.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Trischuk, W.; Tromson, D.; Vittone, E.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

    2003-03-01

    Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

  17. Optical properties, luminescence quenching mechanism and radiation hardness of Eu-doped GaN red powder phosphor

    International Nuclear Information System (INIS)

    Jadwisienczak, W.; Wisniewski, K.; Spencer, M.; Thomas, T.; Ingram, D.

    2010-01-01

    We report on the luminescence quenching mechanism of Eu-doped GaN powder phosphor produced with a low-cost, high yield rapid-ammonothermal method. We have studied as-synthesized and acid rinsed Eu-doped GaN powders with the Eu concentration of ∼0.5 at.%. The Eu-doped GaN photoluminescence (PL) was investigated with 325 nm excitation wavelength at hydrostatic pressures up to 7.7 GPa in temperature range between 12 K and 300 K. The room temperature integrated Eu 3+ ion PL intensity from acid rinsed material is a few times stronger than from the as-synthesized material. The temperature dependent PL studies revealed that the thermal quenching of the dominant Eu 3+ ion transition ( 5 D 0 → 7 F 2 ) at 622 nm is stronger in the chemically modified phosphor indicating more efficient coupling between the Eu 3+ ion and passivated GaN powder grains. Furthermore, it was found that thermal quenching of Eu 3+ ion emission intensity can be completely suppressed in studied materials by applied pressure. This is due to stronger localization of bound exciton on Eu 3+ ion trap induced by hydrostatic pressure. Furthermore, the effect of 2 MeV oxygen irradiation on the PL properties has been investigated for highly efficient Eu-doped GaN phosphor embedded in KBr-GaN:Eu 3+ composite. Fairly good radiation damage resistance was obtained for 1.7 x 10 12 to 5 x 10 13 cm -2 oxygen fluence. Preliminary data indicate that Eu-doped GaN powder phosphor can be considered for devices in a radiation environment.

  18. Absorbing Aerosols Above Cloud: Detection, Quantitative Retrieval, and Radiative Forcing from Satellite-based Passive Sensors

    Science.gov (United States)

    Jethva, H.; Torres, O.; Remer, L. A.; Bhartia, P. K.

    2012-12-01

    Light absorbing particles such as carbonaceous aerosols generated from biomass burning activities and windblown dust particles can exert a net warming effect on climate; the strength of which depends on the absorption capacity of the particles and brightness of the underlying reflecting background. When advected over low-level bright clouds, these aerosols absorb the cloud reflected radiation from ultra-violet (UV) to shortwave-IR (SWIR) and makes cloud scene darker-a phenomenon commonly known as "cloud darkening". The apparent "darkening" effect can be seen by eyes in satellite images as well as quantitatively in the spectral reflectance measurements made by space borne sensors over regions where light absorbing carbonaceous and dust aerosols overlay low-level cloud decks. Theoretical radiative transfer simulations support the observational evidence, and further reveal that the strength of the cloud darkening and its spectral signature (or color ratio) between measurements at two wavelengths are a bi-function of aerosol and cloud optical thickness (AOT and COT); both are measures of the total amount of light extinction caused by aerosols and cloud, respectively. Here, we developed a retrieval technique, named as the "color ratio method" that uses the satellite measurements at two channels, one at shorter wavelength in the visible and one at longer wavelength in the shortwave-IR for the simultaneous retrieval of AOT and COT. The present technique requires assumptions on the aerosol single-scattering albedo and aerosol-cloud separation which are supplemented by the Aerosol Robotic Network (AERONET) and space borne CALIOP lidar measurements. The retrieval technique has been tested making use of the near-UV and visible reflectance observations made by the Ozone Monitoring Instrument (OMI) and Moderate Resolution Imaging Spectroradiometer (MODIS) for distinct above-cloud smoke and dust aerosol events observed seasonally over the southeast and tropical Atlantic Ocean

  19. Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration

    International Nuclear Information System (INIS)

    Lindstroem, G.; Ahmed, M.; Albergo, S.; Allport, P.; Anderson, D.; Andricek, L.; Angarano, M.M.; Augelli, V.; Bacchetta, N.; Bartalini, P.; Bates, R.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Borchi, E.; Botila, T.; Brodbeck, T.J.; Bruzzi, M.; Budzynski, T.; Burger, P.; Campabadal, F.; Casse, G.; Catacchini, E.; Chilingarov, A.; Ciampolini, P.; Cindro, V.; Costa, M.J.; Creanza, D.; Clauws, P.; Da Via, C.; Davies, G.; De Boer, W.; Dell'Orso, R.; De Palma, M.; Dezillie, B.; Eremin, V.; Evrard, O.; Fallica, G.; Fanourakis, G.; Feick, H.; Focardi, E.; Fonseca, L.; Fretwurst, E.; Fuster, J.; Gabathuler, K.; Glaser, M.; Grabiec, P.; Grigoriev, E.; Hall, G.; Hanlon, M.; Hauler, F.; Heising, S.; Holmes-Siedle, A.; Horisberger, R.; Hughes, G.; Huhtinen, M.; Ilyashenko, I.; Ivanov, A.; Jones, B.K.; Jungermann, L.; Kaminsky, A.; Kohout, Z.; Kramberger, G.; Kuhnke, M.; Kwan, S.; Lemeilleur, F.; Leroy, C.; Letheren, M.; Li, Z.; Ligonzo, T.; Linhart, V.; Litovchenko, P.; Loukas, D.; Lozano, M.; Luczynski, Z.; Lutz, G.; MacEvoy, B.; Manolopoulos, S.; Markou, A.; Martinez, C.; Messineo, A.; Miku, M.; Moll, M.; Nossarzewska, E.; Ottaviani, G.; Oshea, V.; Parrini, G.; Passeri, D.; Petre, D.; Pickford, A.; Pintilie, I.; Pintilie, L.; Pospisil, S.; Potenza, R.; Radicci, V.; Raine, C.; Rafi, J.M.; Ratoff, P.N.; Richter, R.H.; Riedler, P.; Roe, S.; Roy, P.; Ruzin, A.; Ryazanov, A.I.; Santocchia, A.; Schiavulli, L.; Sicho, P.; Siotis, I.; Sloan, T.; Slysz, W.; Smith, K.; Solanky, M.; Sopko, B.; Stolze, K.; Sundby Avset, B.; Svensson, B.; Tivarus, C.; Tonelli, G.; Tricomi, A.; Tzamarias, S.; Valvo, G.; Vasilescu, A.; Vayaki, A.; Verbitskaya, E.; Verdini, P.; Vrba, V.; Watts, S.; Weber, E.R.; Wegrzecki, M.; Wegrzecka, I.; Weilhammer, P.; Wheadon, R.; Wilburn, C.; Wilhelm, I.; Wunstorf, R.; Wuestenfeld, J.; Wyss, J.; Zankel, K.; Zabierowski, P.; Zontar, D.

    2001-01-01

    This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstroem et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail

  20. Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results

    International Nuclear Information System (INIS)

    Unno, Y.; Edwards, S.O.; Pyatt, S.; Thomas, J.P.; Wilson, J.A.; Kierstead, J.; Lynn, D.; Carter, J.R.; Hommels, L.B.A.; Robinson, D.; Bloch, I.; Gregor, I.M.; Tackmann, K.; Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L.; Clark, A.

    2014-01-01

    We have been developing a novel radiation-tolerant n + -in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers

  1. Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

    Science.gov (United States)

    Ghosh, P.

    2014-07-01

    The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 1014neqcm-2. Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors.

  2. Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

    International Nuclear Information System (INIS)

    Ghosh, P

    2014-01-01

    The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 10 14 n eq cm −2 . Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors

  3. Radiation hardness test of un-doped CsI crystals and Silicon Photomultipliers for the Mu2e calorimeter

    Science.gov (United States)

    Baccaro, S.; Cemmi, A.; Cordelli, M.; Diociaiuti, E.; Donghia, R.; Giovannella, S.; Loreti, S.; Miscetti, S.; Pillon, M.; Sarra, I.

    2017-11-01

    The Mu2e calorimeter is composed by 1400 un-doped CsI crystals coupled to large area UV extended Silicon Photomultipliers arranged in two annular disks. This calorimeter has to provide precise information on energy, timing and position. It should also be fast enough to handle the high rate background and it must operate and survive in a high radiation environment. Simulation studies estimated that, in the hottest regions, each crystal will absorb a dose of 300 Gy and will be exposed to a neutron fluency of 6 × 1011 n/cm2 in 3 years of running. Test of un-doped CsI crystals irradiated up to 900 Gy and to a neutron fluency up to 9 × 1011 n/cm2 have been performed at CALLIOPE and FNG ENEA facilities in Italy. We present our study on the variation of light yield (LY) and longitudinal response uniformity (LRU) of these crystals after irradiation. The ionization dose does not modify LRU while a 20% reduction in LY is observed at 900 Gy. Similarly, the neutron flux causes an acceptable LY deterioration (≤ 15%). A neutron irradiation test on different types of SIPMs (two different array models from Hamamatsu and one from FBK) have also been carried out by measuring the variation of the leakage current and the charge response to an ultraviolet led. We concluded that, in the experiment, we will need to cool down the SIPMs to 0 °C reduce the leakage current to an acceptable level.

  4. Development and applications of monocrystalline silicon radiation sensors fabricated at Comision Nacional de Energia Atomica (CNEA)

    International Nuclear Information System (INIS)

    Bolzi, C; Bruno, C; Duran, J; Godfrin, E; Martinez Bogado, M; Pla, J; Tamasi, M

    2005-01-01

    The development of silicon photovoltaic sensors at CNEA has begun in 1998.These sensors, fabricated in the Photovoltaic Laboratory of the Solar Energy Group at Constituyentes Atomic Center, have been used to build low cost radiometers as well as solar angular position sensors on board of artificial satellites.The design, fabrication and calibration of these sensors have been made in different prototypes in order to analyze its performance and to evaluate its limitations.Nowadays, several commercial prototypes have been distributed in different laboratories of our country in order to evaluate them in real work conditions.Particularly, the first experiment of argentine solar cells on space performed on board of SAC-A satellite, included the fabrication of position sensors of this satellite as part of the alignment system of the solar array respect to the sun.In this article, the state of the art of monocrystalline silicon photovoltaic sensors fabricated at CNEA for terrestrial and space applications is presented

  5. Dimensional Measurements under High Radiation with Optical Fibre Sensors based on White Light Interferometry - Report on Irradiation Tests

    International Nuclear Information System (INIS)

    Cheymol, G.; Caron, N.; Gusarov, A.; Gaillot, S.; Destouches, C.

    2013-06-01

    Abstract-Optical fibre sensors (OFS) can bring substantial advantages over conventional sensing approaches for in-situ measurement in fission Material Testing Reactors (MTRs) and other nuclear research or industrial facilities: easy remote sensing, possibilities of multiplexing, passive operation, low sensitivity to electromagnetic interference, compact size, high resolution and accuracy even under high radiation dose and high temperature, once necessary adaptations have been achieved. In this paper firstly we remind the three undesired effects of high level of irradiation on OFS: radiation induced attenuation, radio luminescence and compaction due to fast neutrons. Then we present two types of sensor that we develop: elongation Fabry Perot sensor - jointly with SCK.CEN - and Michelson type displacement sensor; they both rely on white light interferometry to retrieve the desired measurement. We report the results of irradiation of Fabry-Perot sensors in the core of BR2 material testing reactor in Mol (Belgium), under intense neutron-gamma flux and at high temperature. Six Fabry Perot fibre optics sensors are mounted on a support insensitive to radiation. The objective is to test the survival and the drift of the sensors. The temperature is maintained steady at 200 deg. C during 22 days then the temperature is increased up to 390 deg. C. Among five sensors built according to nominal scheme, four are still alive at the end of the cycle and three show a low drift of 1 to 4 μm. These results show a clear progress compared to the previous irradiation and make it possible to consider the use of these sensors in real tests of material in MTR reactor. However, improvement in the robustness of the interfaces is still necessary. The next part is devoted to the measurement of displacements perpendicular to the direction of the lead-in fibre, of interest for small room environments where the fibre cannot make a 90 deg. turn. The optical scheme is based on the Michelson

  6. Tracking with CVD diamond radiation sensors at high luminosity colliders (1999-3.1507)

    CERN Document Server

    Schnetzer, S R; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Da Graca, J; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jamieson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Plano, R J; Polesello, P; Prawer, S; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Sciortino, S; Somalwar, S V; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

    1999-01-01

    Recent progress on developing diamond-based sensors for vertex detection at high luminosity hadron colliders is described. Measurements of the performance of diamond sensors after irradiation to fluences of up to 5*10/sup 15/ hadrons/cm/sup 2/ are shown. These indicate that diamond sensors will operate at distances as close as 5 cm from the interaction point at the Large Hadron Collider (LHC) for many years at full luminosity without significant degradation in performance. Measurements of the quality of the signals from diamond sensors as well as spatial uniformity are presented. Test beam results on measurements of diamond-based microstrip and pixels devices are described.

  7. Radiation sensors for medical, industrial and environmental applications: how to engage with schools and the general public

    Science.gov (United States)

    Seitz, B.; Campos Rivera, N.; Gray, R.; Powell, A.; Thomson, F.

    2018-01-01

    Radiation, radiation detection and radiation protection are topics in physics and its applications which generate a wide interest in the public. This interest is either generated through medical procedures, applications of nuclear energy or nuclear accidents. The technical nature of these topics usually means that they are not well covered in the normal education stream, opening many opportunities to engage with schools and the general public to showcase the latest developments and their applications. The detection of radiation is at the very heart of understanding radiation, its fascination and associated fears. The outreach group of the nuclear physics group at the University of Glasgow demonstrates a number of successful outreach activities centred around radiation detection and described in this paper, focusing on activities delivered to a variety of audiences and related to applied nuclear physics work within our group. These concentrate on the application of novel sensor technologies for nuclear decommissioning, medical imaging modalities and the monitoring of environmental radioactivity. The paper will provide some necessary background material as well as practical instructions for some of the activities developed.

  8. Hardness variability in commercial technologies

    International Nuclear Information System (INIS)

    Shaneyfelt, M.R.; Winokur, P.S.; Meisenheimer, T.L.; Sexton, F.W.; Roeske, S.B.; Knoll, M.G.

    1994-01-01

    The radiation hardness of commercial Floating Gate 256K E 2 PROMs from a single diffusion lot was observed to vary between 5 to 25 krad(Si) when irradiated at a low dose rate of 64 mrad(Si)/s. Additional variations in E 2 PROM hardness were found to depend on bias condition and failure mode (i.e., inability to read or write the memory), as well as the foundry at which the part was manufactured. This variability is related to system requirements, and it is shown that hardness level and variability affect the allowable mode of operation for E 2 PROMs in space applications. The radiation hardness of commercial 1-Mbit CMOS SRAMs from Micron, Hitachi, and Sony irradiated at 147 rad(Si)/s was approximately 12, 13, and 19 krad(Si), respectively. These failure levels appear to be related to increases in leakage current during irradiation. Hardness of SRAMs from each manufacturer varied by less than 20%, but differences between manufacturers are significant. The Qualified Manufacturer's List approach to radiation hardness assurance is suggested as a way to reduce variability and to improve the hardness level of commercial technologies

  9. Patterning of diamond like carbon films for sensor applications using silicon containing thermoplastic resist (SiPol) as a hard mask

    Energy Technology Data Exchange (ETDEWEB)

    Virganavičius, D. [Paul Scherrer Institute, Laboratory for Micro- and Nanotechnology, 5232 Villigen PSI (Switzerland); Kaunas University of Technology, Institute of Materials Science, 51423 Kaunas (Lithuania); Cadarso, V.J.; Kirchner, R. [Paul Scherrer Institute, Laboratory for Micro- and Nanotechnology, 5232 Villigen PSI (Switzerland); Stankevičius, L.; Tamulevičius, T.; Tamulevičius, S. [Kaunas University of Technology, Institute of Materials Science, 51423 Kaunas (Lithuania); Schift, H., E-mail: helmut.schift@psi.ch [Paul Scherrer Institute, Laboratory for Micro- and Nanotechnology, 5232 Villigen PSI (Switzerland)

    2016-11-01

    Highlights: • Nanopatterning of thin diamond-like carbon (DLC) films and silver containing DLC composites. • Nanoimprint lithography with thermoplastic silicon containing resist. • Zero-residual layer imprinting and pattern transfer by reactive ion etching. • Robust leaky waveguide sensors with sensitivity up to 319 nm/RIU. - Abstract: Patterning of diamond-like carbon (DLC) and DLC:metal nanocomposites is of interest for an increasing number of applications. We demonstrate a nanoimprint lithography process based on silicon containing thermoplastic resist combined with plasma etching for straightforward patterning of such films. A variety of different structures with few hundred nanometer feature size and moderate aspect ratios were successfully realized. The quality of produced patterns was directly investigated by the means of optical and scanning electron microscopy (SEM). Such structures were further assessed by employing them in the development of gratings for guided mode resonance (GMR) effect. Optical characterization of such leaky waveguide was compared with numerical simulations based on rigorous coupled wave analysis method with good agreement. The use of such structures as refractive index variation sensors is demonstrated with sensitivity up to 319 nm/RIU, achieving an improvement close to 450% in sensitivity compared to previously reported similar sensors. This pronounced GMR signal fully validates the employed DLC material, the technology to pattern it and the possibility to develop DLC based gratings as corrosion and wear resistant refractometry sensors that are able to operate under harsh conditions providing great value and versatility.

  10. Physical retrieval of precipitation water contents from Special Sensor Microwave/Imager (SSM/I) data. Part 1: A cloud ensemble/radiative parameterization for sensor response (report version)

    Science.gov (United States)

    Olson, William S.; Raymond, William H.

    1990-01-01

    The physical retrieval of geophysical parameters based upon remotely sensed data requires a sensor response model which relates the upwelling radiances that the sensor observes to the parameters to be retrieved. In the retrieval of precipitation water contents