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Sample records for quantum-confined stark effect

  1. Quantum-Confined Stark Effect in Ensemble of Colloidal Semiconductor Quantum Dots

    International Nuclear Information System (INIS)

    Zhi-Bing, Wang; Hui-Chao, Zhang; Jia-Yu, Zhang; Su, Huaipeng; Wang, Y. Andrew

    2010-01-01

    The presence of a strong, changing, randomly-oriented, local electric field, which is induced by the photo-ionization that occurs universally in colloidal semiconductor quantum dots (QDs), makes it difficult to observe the quantum-confined Stark effect in ensemble of colloidal QDs. We propose a way to inhibit such a random electric field, and a clear quantum-confined Stark shift is observed directly in close-packed colloidal QDs. Besides the applications in optical switches and modulators, our experimental results indicate how the oscillator strengths of the optical transitions are changed under external electric fields. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. Quantum confined Stark effect in Gaussian quantum wells: A tight-binding study

    International Nuclear Information System (INIS)

    Ramírez-Morales, A.; Martínez-Orozco, J. C.; Rodríguez-Vargas, I.

    2014-01-01

    The main characteristics of the quantum confined Stark effect (QCSE) are studied theoretically in quantum wells of Gaussian profile. The semi-empirical tight-binding model and the Green function formalism are applied in the numerical calculations. A comparison of the QCSE in quantum wells with different kinds of confining potential is presented

  3. Quantum confined Stark effect in Gaussian quantum wells: A tight-binding study

    Energy Technology Data Exchange (ETDEWEB)

    Ramírez-Morales, A.; Martínez-Orozco, J. C.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico)

    2014-05-15

    The main characteristics of the quantum confined Stark effect (QCSE) are studied theoretically in quantum wells of Gaussian profile. The semi-empirical tight-binding model and the Green function formalism are applied in the numerical calculations. A comparison of the QCSE in quantum wells with different kinds of confining potential is presented.

  4. Strong quantum-confined stark effect in germanium quantum-well structures on silicon

    International Nuclear Information System (INIS)

    Kuo, Y.; Lee, Y. K.; Gei, Y.; Ren, S; Roth, J. E.; Miller, D. A.; Harris, J. S.

    2006-01-01

    Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such component with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimeters) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger Quantum-Confined Stark Effect (QCSE) mechanism, which allows modulator structures with only micrometers of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor, such semiconductors often display much weak optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture. (author)

  5. Oscillator strength and quantum-confined Stark effect of excitons in a thin PbS quantum disk

    Science.gov (United States)

    Oukerroum, A.; El-Yadri, M.; El Aouami, A.; Feddi, E.; Dujardin, F.; Duque, C. A.; Sadoqi, M.; Long, G.

    2018-01-01

    In this paper, we report a study of the effect of a lateral electric field on a quantum-confined exciton in a thin PbS quantum disk. Our approach was performed in the framework of the effective mass theory and adiabatic approximation. The ground state energy and the stark shift were determined by using a variational method with an adequate trial wavefunction, by investigating a 2D oscillator strength under simultaneous consideration of the geometrical confinement and the electric field strength. Our results showed a strong dependence of the exciton binding and the Stark shift on the disk dimensions in both axial and longitudinal directions. On the other hand, our results also showed that the Stark shift’s dependence on the electric field is not purely quadratic but the linear contribution is also important and cannot be neglected, especially when the confinement gets weaker.

  6. Electroreflectance investigations of quantum confined Stark effect in GaN quantum wells

    International Nuclear Information System (INIS)

    Drabinska, A; Pakula, K; Baranowski, J M; Wysmolek, A

    2010-01-01

    In this paper we present room temperature electroreflectance studies of GaN quantum wells (QWs) with different well width. The electroreflectance measurements were performed with external voltage applied to the structure therefore it was possible to tune the electric field inside QW up to its completely screening and furthermore even reversing it. The analysis of QW spectral lines showed the Stark shift dependence on applied voltage and well width reaching about 35 meV for highest voltage and widest well width. It was possible to obtain the condition of zero electric field in QW. Both broadening and amplitude of QW lines are minimal for zero electric field and increases for increasing electric field in QW. The energy transition is maximum for zero electric field and for increasing electric field it decreases due to Stark effect. Neither amplitude and broadening parameter nor energy transition does not depend on the direction of electric field. Only parameter that depends on the direction of electric field in QW is phase of the signal. The analysis of Franz-Keldysh oscillations (FKOs) from AlGaN barriers allowed to calculate the real electric field dependence on applied voltage and therefore to obtain the Stark shift dependence on electric field. The Stark shift reached from -12 meV to -35 meV for 450 kV/cm depending on the well width. This conditions were established for highest forward voltages therefore this is the value of electric field and Stark shift caused only by the intrinsic polarization of nitrides.

  7. Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers

    International Nuclear Information System (INIS)

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tiam Tan, Swee; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Wang, Liancheng; Wei Sun, Xiao; Volkan Demir, Hilmi

    2014-01-01

    InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that the QCSE is self-screened by the polarization induced bulk charges enabled by designing quantum barriers. The InN composition of the InGaN quantum barrier graded along the growth orientation opportunely generates the polarization induced bulk charges in the quantum barrier, which well compensate the polarization induced interface charges, thus avoiding the electric field in the quantum wells. Consequently, the optical output power and the external quantum efficiency are substantially improved for the LEDs. The ability to self-screen the QCSE using polarization induced bulk charges opens up new possibilities for device engineering of III-nitrides not only in LEDs but also in other optoelectronic devices.

  8. Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tiam Tan, Swee; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Wang, Liancheng; Wei Sun, Xiao, E-mail: exwsun@ntu.edu.sg, E-mail: volkan@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Volkan Demir, Hilmi, E-mail: exwsun@ntu.edu.sg, E-mail: volkan@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-06-16

    InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that the QCSE is self-screened by the polarization induced bulk charges enabled by designing quantum barriers. The InN composition of the InGaN quantum barrier graded along the growth orientation opportunely generates the polarization induced bulk charges in the quantum barrier, which well compensate the polarization induced interface charges, thus avoiding the electric field in the quantum wells. Consequently, the optical output power and the external quantum efficiency are substantially improved for the LEDs. The ability to self-screen the QCSE using polarization induced bulk charges opens up new possibilities for device engineering of III-nitrides not only in LEDs but also in other optoelectronic devices.

  9. Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.

    Science.gov (United States)

    Rouifed, Mohamed Said; Chaisakul, Papichaya; Marris-Morini, Delphine; Frigerio, Jacopo; Isella, Giovanni; Chrastina, Daniel; Edmond, Samson; Le Roux, Xavier; Coudevylle, Jean-René; Vivien, Laurent

    2012-10-01

    Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si(0.35)Ge(0.65) barrier) on Si(0.21)Ge(0.79) virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.

  10. Quantum confined Stark effects of single dopant in polarized hemispherical quantum dot: Two-dimensional finite difference approach and Ritz-Hassé variation method

    Science.gov (United States)

    El Harouny, El Hassan; Nakra Mohajer, Soukaina; Ibral, Asmaa; El Khamkhami, Jamal; Assaid, El Mahdi

    2018-05-01

    Eigenvalues equation of hydrogen-like off-center single donor impurity confined in polarized homogeneous hemispherical quantum dot deposited on a wetting layer, capped by insulated matrix and submitted to external uniform electric field is solved in the framework of the effective mass approximation. An infinitely deep potential is used to describe effects of quantum confinement due to conduction band offsets at surfaces where quantum dot and surrounding materials meet. Single donor ground state total and binding energies in presence of electric field are determined via two-dimensional finite difference approach and Ritz-Hassé variation principle. For the latter method, attractive coulomb correlation between electron and ionized single donor is taken into account in the expression of trial wave function. It appears that off-center single dopant binding energy, spatial extension and radial probability density are strongly dependent on hemisphere radius and single dopant position inside quantum dot. Influence of a uniform electric field is also investigated. It shows that Stark effect appears even for very small size dots and that single dopant energy shift is more significant when the single donor is near hemispherical surface.

  11. Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

    Science.gov (United States)

    Zagonel, L. F.; Tizei, L. H. G.; Vitiello, G. Z.; Jacopin, G.; Rigutti, L.; Tchernycheva, M.; Julien, F. H.; Songmuang, R.; Ostasevicius, T.; de la Peña, F.; Ducati, C.; Midgley, P. A.; Kociak, M.

    2016-05-01

    We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN quantum disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over three orders of magnitude, strong nonlinearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (size, position along the NW and shell thickness). For thick QDisks (>4 nm), the QDisk emission energy is observed to blueshift with the increase of the emission intensity. This is interpreted as a consequence of the increase of carriers density excited by the incident electron beam inside the QDisks, which screens the internal electric field and thus reduces the quantum confined Stark effect (QCSE) present in these QDisks. For thinner QDisks (energy shifts, marking the transition from unscreened to partially screened QCSE. From the threshold value we estimate the lifetime in the unscreened regime. These observations suggest that, counterintuitively, electrons of high energy can behave ultimately as single electron-hole pair generators. In addition, when we increase the current from 1 to 10 pA the light emission efficiency drops by more than one order of magnitude. This reduction of the emission efficiency is a manifestation of the "efficiency droop" as observed in nitride-based 2D light emitting diodes, a phenomenon tentatively attributed to the Auger effect.

  12. Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode.

    Science.gov (United States)

    Chen, Horng-Shyang; Liu, Zhan Hui; Shih, Pei-Ying; Su, Chia-Ying; Chen, Chih-Yen; Lin, Chun-Han; Yao, Yu-Feng; Kiang, Yean-Woei; Yang, C C

    2014-04-07

    A reverse-biased voltage is applied to either device in the vertical configuration of two light-emitting diodes (LEDs) grown on patterned and flat Si (110) substrates with weak and strong quantum-confined Stark effects (QCSEs), respectively, in the InGaN/GaN quantum wells for independently controlling the applied voltage across and the injection current into the p-i-n junction in the lateral configuration of LED operation. The results show that more carrier supply is needed in the LED of weaker QCSE to produce a carrier screening effect for balancing the potential tilt in increasing the forward-biased voltage, when compared with the LED of stronger QCSE. The small spectral shift range in increasing injection current in the LED of weaker QCSE is attributed not only to the weaker QCSE, but also to its smaller device resistance such that a given increment of applied voltage leads to a larger increment of injection current. From a viewpoint of practical application in LED operation, by applying a reverse-biased voltage in the vertical configuration, the applied voltage and injection current in the lateral configuration can be independently controlled by adjusting the vertical voltage for keeping the emission spectral peak fixed.

  13. Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

    Science.gov (United States)

    Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Prabaswara, Aditya; Zhao, Chao; Priante, Davide; Min, Jung-Wook; Ng, Tien Khee; Ooi, Boon S.

    2018-03-01

    We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

  14. Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

    KAUST Repository

    Tangi, Malleswararao

    2018-03-09

    We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

  15. Study of quantum confinement effects in ZnO nanostructures

    Science.gov (United States)

    Movlarooy, Tayebeh

    2018-03-01

    Motivation to fact that zinc oxide nanowires and nanotubes with successful synthesis and the mechanism of formation, stability and electronic properties have been investigated; in this study the structural, electronic properties and quantum confinement effects of zinc oxide nanotubes and nanowires with different diameters are discussed. The calculations within density functional theory and the pseudo potential approximation are done. The electronic structure and energy gap for Armchair and zigzag ZnO nanotubes with a diameter of about 4 to 55 Angstrom and ZnO nanowires with a diameter range of 4 to 23 Å is calculated. The results revealed that due to the quantum confinement effects, by reducing the diameter of nanowires and nanotubes, the energy gap increases. Zinc oxide semiconductor nanostructures since having direct band gap with size-dependent and quantum confinement effect are recommended as an appropriate candidate for making nanoscale optoelectronic devices.

  16. Quantum confinement effects in low-dimensional systems

    Indian Academy of Sciences (India)

    2015-06-03

    Jun 3, 2015 ... Quantum confinement effects in low-dimensional systems. Figure 5. (a) Various cuts of the three-dimensional data showing energy vs. momen- tum dispersion relations for Ag film of 17 ML thickness on Ge(111). (b) Photo- emission intensity maps along ¯M– ¯ – ¯K direction. (c) Substrate bands replotted ...

  17. Bounds on quantum confinement effects in metal nanoparticles

    Science.gov (United States)

    Blackman, G. Neal; Genov, Dentcho A.

    2018-03-01

    Quantum size effects on the permittivity of metal nanoparticles are investigated using the quantum box model. Explicit upper and lower bounds are derived for the permittivity and relaxation rates due to quantum confinement effects. These bounds are verified numerically, and the size dependence and frequency dependence of the empirical Drude size parameter is extracted from the model. Results suggest that the common practice of empirically modifying the dielectric function can lead to inaccurate predictions for highly uniform distributions of finite-sized particles.

  18. Quantum confinement effects on superconducting properties of Lead nanocrystals

    Science.gov (United States)

    Aubin, Herve; Moreira, Helena; Mahler, Benoit; Dubertret, Benoit

    2008-03-01

    We developed a new chemical synthesis method for producing large quantities of monodispersed lead (Pb) nanocrystals. They are obtained from the alcohol reduction of a mixture of two lead carboxylates with alkyl chains of different lengths, dissolved in a high temperature solvent. The nanocrystals obtained are protected from oxydation and aggregation by long chain fatty acids and their diameter can be tuned to reach values as low as 10 nm. Our results suggest that monodispersed particules are obtained when nucleation and growth occur at distincts temperatures, possibly as a consequence of different reactivities of the two lead carboxylates used in the solution. Owing to the large quantities of monodispersed particles produced, thermodynamics studies as function of particles diameter become possible. In particular, we will present a study of the effect of quantum confinement on superconducting properties of these Pb particles through SQUID magnetometry measurements.

  19. Understanding and tuning the quantum-confinement effect and edge magnetism in zigzag graphene nanoribbon.

    Science.gov (United States)

    Huang, Liang Feng; Zhang, Guo Ren; Zheng, Xiao Hong; Gong, Peng Lai; Cao, Teng Fei; Zeng, Zhi

    2013-02-06

    The electronic structure of zigzag graphene nanoribbon (ZGNR) is studied using density functional theory. The mechanisms underlying the quantum-confinement effect and edge magnetism in ZGNR are systematically investigated by combining the simulated results and some useful analytic models. The quantum-confinement effect and the inter-edge superexchange interaction can be tuned by varying the ribbon width, and the spin polarization and direct exchange splitting of the edge states can be tuned by varying their electronic occupations. The two edges of ZGNR can be equally or unequally tuned by charge doping or Li adsorption, respectively. The Li adatom has a site-selective adsorption on ZGNR, and it is a nondestructive and memorable approach to effectively modify the edge states in ZGNR. These systematic understanding and effective tuning of ZGNR electronics presented in this work are helpful for further investigation and application of ZGNR and other magnetic graphene systems.

  20. Quantum confinement effect in cheese like silicon nano structure fabricated by metal induced etching

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Shailendra K., E-mail: phd1211512@iiti.ac.in; Sahu, Gayatri; Sagdeo, Pankaj R.; Kumar, Rajesh [Material Research Laboratory, Discipline of Physics & MSEG, Indian Institute of Technology Indore, Madhya Pradesh-452017 (India)

    2015-08-28

    Quantum confinement effect has been studied in cheese like silicon nano-structures (Ch-SiNS) fabricated by metal induced chemical etching using different etching times. Scanning electron microscopy is used for the morphological study of these Ch-SiNS. A visible photoluminescence (PL) emission is observed from the samples under UV excitation at room temperature due to quantum confinement effect. The average size of Silicon Nanostructures (SiNS) present in the samples has been estimated by bond polarizability model using Raman Spectroscopy from the red-shift observed from SiNSs as compared to its bulk counterpart. The sizes of SiNS present in the samples decreases as etching time increase from 45 to 75 mintunes.

  1. Strong Quantum Confinement Effects and Chiral Excitons in Bio-Inspired ZnO–Amino Acid Cocrystals

    KAUST Repository

    Muhammed, Madathumpady Abubaker Habeeb; Lamers, Marlene; Baumann, Verena; Dey, Priyanka; Blanch, Adam J.; Polishchuk, Iryna; Kong, Xiang-Tian; Levy, Davide; Urban, Alexander S.; Govorov, Alexander O.; Pokroy, Boaz; Rodrí guez-Ferná ndez, Jessica; Feldmann, Jochen

    2018-01-01

    of amino acid potential barriers within the ZnO crystal lattice. Overall, our findings indicate that biomolecule cocrystallization can be used as a truly bio-inspired means to induce chiral quantum confinement effects in quasi-bulk semiconductors.

  2. Influence of the nanoparticles agglomeration state in the quantum-confinement effects: Experimental evidences

    Energy Technology Data Exchange (ETDEWEB)

    Lorite, I., E-mail: lorite@physik.uni-leipzig.de [Electroceramic Department, Instituto de Cerámica y Vidrio, CSIC, Kelsen 5, 28049, Madrid (Spain); Division of Superconductivity and Magnetism, Faculty of Physics and Earth Sciences, Linnestrasse 5, D-04103 Leipzig (Germany); Romero, J. J.; Fernandez, J. F. [Electroceramic Department, Instituto de Cerámica y Vidrio, CSIC, Kelsen 5, 28049, Madrid (Spain)

    2015-03-15

    The agglomeration state facilitates particle-particle interaction which produces important effects in the phonon confinement effects at the nanoscale. A partial phonon transmission between close nanoparticles yields a lower momentum conservation relaxation than in a single isolated nanoparticle. It means a larger red shift and broadening of the Raman modes than the expected ones for Raman quantum confinement effects. This particle-particle interaction can drive to error when Raman responses are used to estimate the size of the nanoscaled materials. In this work different corrections are suggested to overtake this source of error.

  3. Influence of the nanoparticles agglomeration state in the quantum-confinement effects: Experimental evidences

    International Nuclear Information System (INIS)

    Lorite, I.; Romero, J. J.; Fernandez, J. F.

    2015-01-01

    The agglomeration state facilitates particle-particle interaction which produces important effects in the phonon confinement effects at the nanoscale. A partial phonon transmission between close nanoparticles yields a lower momentum conservation relaxation than in a single isolated nanoparticle. It means a larger red shift and broadening of the Raman modes than the expected ones for Raman quantum confinement effects. This particle-particle interaction can drive to error when Raman responses are used to estimate the size of the nanoscaled materials. In this work different corrections are suggested to overtake this source of error

  4. Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus.

    Science.gov (United States)

    Whitney, William S; Sherrott, Michelle C; Jariwala, Deep; Lin, Wei-Hsiang; Bechtel, Hans A; Rossman, George R; Atwater, Harry A

    2017-01-11

    We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. We interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena that have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.

  5. Effect of quantum confinement on thermoelectric properties of vanadium dioxide nanofilms

    Energy Technology Data Exchange (ETDEWEB)

    Khan, G.R.; Ahmad, Bilal [National Institute of Technology Srinagar, Nanotech Research Lab, Department of Physics, Kashmir (India)

    2017-12-15

    The quantum confinement effect on thermoelectric properties of pristine vanadium dioxide (VO{sub 2}) nanofilms across semiconductor to metal phase transition (SMT) has been demonstrated by studying VO{sub 2} nanofilms of 15 nm thickness in comparison to microfilms of 290 nm thickness synthesized via inorganic sol-gel method casted on glass substrates by spin coating technique. The ebbing of phase transition temperature in nanofilms across SMT was consistent with the results obtained from resistance-temperature hysteresis contour during SMT dynamics of the nanofilms. The temperature dependent Hall and Seebeck measurements revealed that electrons were the charge carriers in the nanofilms and that the value of charge carrier concentration increased as much as 4 orders of magnitude while going across SMT which stood responsible almost entirely for resistance variations. The decline in carrier mobility and escalation in Seebeck coefficient in the low temperature semiconducting region were splendidly witnessed across SMT. (orig.)

  6. Quantum confinement effect and exciton binding energy of layered perovskite nanoplatelets

    Directory of Open Access Journals (Sweden)

    Qiang Wang

    2018-02-01

    Full Text Available We report the preparation of monolayer (n = 1, few-layer (n = 2–5 and 3D (n = ∞ organic lead bromide perovskite nanoplatelets (NPLs by tuning the molar ratio of methylammonium bromide (MABr and hexadecammonium bromide (HABr. The absorption spectrum of the monolayer (HA2PbBr4 perovskite NPLs shows about 138 nm blue shift from that of 3D MAPbBr3 perovskites, which is attributed to strong quantum confinement effect. We further investigate the two-photon photoluminescence (PL of the NPLs and measure the exciton binding energy of monolayer perovskite NPLs using linear absorption and two-photon PL excitation spectroscopy. The exciton binding energy of monolayer perovskite NPLs is about 218 meV, which is far larger than tens of meV in 3D lead halide perovskites.

  7. Quantum confinement effect of two-dimensional all-inorganic halide perovskites

    KAUST Repository

    Cai, Bo; Li, Xiaoming; Gu, Yu; Harb, Moussab; Li, Jianhai; Xie, Meiqiu; Cao, Fei; Song, Jizhong; Zhang, Shengli; Cavallo, Luigi; Zeng, Haibo

    2017-01-01

    Quantum confinement effect (QCE), an essential physical phenomenon of semiconductors when the size becomes comparable to the exciton Bohr radius, typically results in quite different physical properties of low-dimensional materials from their bulk counterparts and can be exploited to enhance the device performance in various optoelectronic applications. Here, taking CsPbBr3 as an example, we reported QCE in all-inorganic halide perovskite in two-dimensional (2D) nanoplates. Blue shifts in optical absorption and photoluminescence spectra were found to be stronger in thinner nanoplates than that in thicker nanoplates, whose thickness lowered below ∼7 nm. The exciton binding energy results showed similar trend as that obtained for the optical absorption and photoluminescence. Meanwile, the function of integrated intensity and full width at half maximum and temperature also showed similar results, further supporting our conclusions. The results displayed the QCE in all-inorganic halide perovskite nanoplates and helped to design the all-inorganic halide perovskites with desired optical properties.

  8. Quantum confinement effect of two-dimensional all-inorganic halide perovskites

    KAUST Repository

    Cai, Bo

    2017-09-07

    Quantum confinement effect (QCE), an essential physical phenomenon of semiconductors when the size becomes comparable to the exciton Bohr radius, typically results in quite different physical properties of low-dimensional materials from their bulk counterparts and can be exploited to enhance the device performance in various optoelectronic applications. Here, taking CsPbBr3 as an example, we reported QCE in all-inorganic halide perovskite in two-dimensional (2D) nanoplates. Blue shifts in optical absorption and photoluminescence spectra were found to be stronger in thinner nanoplates than that in thicker nanoplates, whose thickness lowered below ∼7 nm. The exciton binding energy results showed similar trend as that obtained for the optical absorption and photoluminescence. Meanwile, the function of integrated intensity and full width at half maximum and temperature also showed similar results, further supporting our conclusions. The results displayed the QCE in all-inorganic halide perovskite nanoplates and helped to design the all-inorganic halide perovskites with desired optical properties.

  9. Effects of quantum confinement and shape on band gap of core/shell quantum dots and nanowires

    Science.gov (United States)

    Gao, Faming

    2011-05-01

    A quantum confinement model for nanocrystals developed is extended to study for the optical gap shifts in core/shell quantum dots and nanowires. The chemical bond properties and gap shifts in the InP/ZnS, CdSe/CdS, CdSe/ZnS, and CdTe/ZnS core/shell quantum dots are calculated in detail. The calculated band gaps are in excellent agreement with experimental values. The effects of structural taping and twinning on quantum confinement of InP and Si nanowires are elucidated. It is found theoretically that a competition between the positive Kubo energy-gap shift and the negative surface energy shift plays the crucial role in the optical gaps of these nanosystems.

  10. Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

    DEFF Research Database (Denmark)

    Gorczyca, I.; Suski, T.; Christensen, Niels Egede

    2012-01-01

    InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite InN/G...... wells and barriers one may tune band gaps over a wide spectral range, which provides flexibility in band gap engineering.......InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite In......N/GaN(0001) superlattices are investigated, and the variation of the band gap with the thicknesses of the well and the barrier is discussed. Superlattices of the form mInN/nGaN with n ≥ m are simulated using band structure calculations in the Local Density Approximation with a semiempirical correction...

  11. Cross-sectional nanophotoluminescence studies of Stark effects in self-assembled quantum dots

    International Nuclear Information System (INIS)

    Htoon, H.; Keto, J. W.; Baklenov, O.; Holmes, A. L. Jr.; Shih, C. K.

    2000-01-01

    By using a cross-sectional geometry, we show the capability to perform single-dot spectroscopy in self-assembled quantum dots using far-field optics. By using this method, we study the quantum-confined Stark effect in self-assembled quantum dots. For single-stack quantum dots (QDs), we find that the spectra are redshifted with an increase in electric field. For vertically coupled double-stack quantum dots, while most of the QDs are redshifted, some QDs show blueshifted spectra, which can be interpreted as an evidence of coupled QD molecules. (c) 2000 American Institute of Physics

  12. Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

    International Nuclear Information System (INIS)

    Jiang Xiang-Wei; Li Shu-Shen

    2012-01-01

    By using the linear combination of bulk band (LCBB) method incorporated with the top of the barrier splitting (TBS) model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate (DG) metal—oxide—semiconductor field-effect transistors (MOSFETs). A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness (2.0 nm and below) by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  13. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

    Energy Technology Data Exchange (ETDEWEB)

    Dikareva, N. V., E-mail: dnat@ro.ru; Vikhrova, O. V.; Zvonkov, B. N. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Malekhonova, N. V. [Lobachevsky State University of Nizhni Novgorod (Russian Federation); Nekorkin, S. M. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Pirogov, A. V.; Pavlov, D. A. [Lobachevsky State University of Nizhni Novgorod (Russian Federation)

    2015-01-15

    Heterostructures containing single GaAsSb/GaAs quantum wells and bilayer GaAsSb/InGaAs quantum wells are produced by metal-organic vapor-phase epitaxy at atmospheric pressure. The growth temperature of the quantum-confined layers is 500–570°C. The structural quality of the samples and the quality of heterointerfaces of the quantum wells are studied by the high-resolution transmission electron microscopy of cross sections. The emission properties of the heterostructures are studied by photoluminescence measurements. The structures are subjected to thermal annealing under conditions chosen in accordance with the temperature and time of growth of the upper cladding p-InGaP layer during the formation of GaAs/InGaP laser structures with an active region containing quantum-confined GaAsSb layers. It is found that such heat treatment can have a profound effect on the emission properties of the active region, only if a bilayer GaAsSb/InGaAs quantum well is formed.

  14. Stark effect of excitons in corrugated lateral surface superlattices: effect of centre-of-mass quantization

    International Nuclear Information System (INIS)

    Hong Sun

    1998-11-01

    The quantum confined Stark effect (QCSE) of excitons in GaAs/AlAs corrugated lateral surface superlattices (CLSSLs) is calculated. Blue and red shifts in the exciton energies are predicted for the heavy- and light-excitons in the CLSSLs, respectively, comparing with those in the unmodulated quantum well due to the different effective hole masses in the parallel direction. Sensitive dependence of the QCSE on the hole effective mass in the parallel direction is expected because of the ''centre-of-mass'' quantization (CMQ) induced by the periodic corrugated interfaces of the CLSSLs. The effect of the CMQ on the exciton mini-bands and the localization of the excitons in the CLSSLs is discussed. (author)

  15. Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor

    International Nuclear Information System (INIS)

    Padilla, J. L.; Alper, C.; Ionescu, A. M.; Gámiz, F.

    2014-01-01

    The analysis of quantum mechanical confinement in recent germanium electron–hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that constitutes the operating principle of these devices. The vertical electric field that appears across the intrinsic semiconductor to give rise to the bilayer configuration makes the formerly continuous conduction and valence bands become a discrete set of energy subbands, therefore increasing the effective bandgap close to the gates and reducing the BTBT probabilities. In this letter, we present a simulation approach that shows how the inclusion of quantum confinement and the subsequent modification of the band profile results in the appearance of lateral tunneling to the underlap regions that greatly degrades the subthreshold swing of these devices. To overcome this drawback imposed by confinement, we propose an heterogate configuration that proves to suppress this parasitic tunneling and enhances the device performance.

  16. Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

    International Nuclear Information System (INIS)

    Park, Y.; Hirose, Y.; Fukumura, T.; Hasegawa, T.; Nakao, S.; Xu, J.

    2014-01-01

    We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w Bi ) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ F  = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L ϕ ) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w Bi and t smaller than λ F showed low dimensional electronic behavior at low temperatures where L ϕ (T) exceed w Bi or t

  17. Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Park, Y., E-mail: youngok@chem.s.u-tokyo.ac.jp [Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033 (Japan); Hirose, Y.; Fukumura, T.; Hasegawa, T. [Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); CREST, JST, Bunkyo, Tokyo 113-0033 (Japan); Nakao, S. [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); CREST, JST, Bunkyo, Tokyo 113-0033 (Japan); Xu, J. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2014-01-13

    We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w{sub Bi}) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ{sub F} = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L{sub ϕ}) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w{sub Bi} and t smaller than λ{sub F} showed low dimensional electronic behavior at low temperatures where L{sub ϕ}(T) exceed w{sub Bi} or t.

  18. Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch; Alper, C.; Ionescu, A. M. [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain)

    2014-08-25

    The analysis of quantum mechanical confinement in recent germanium electron–hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that constitutes the operating principle of these devices. The vertical electric field that appears across the intrinsic semiconductor to give rise to the bilayer configuration makes the formerly continuous conduction and valence bands become a discrete set of energy subbands, therefore increasing the effective bandgap close to the gates and reducing the BTBT probabilities. In this letter, we present a simulation approach that shows how the inclusion of quantum confinement and the subsequent modification of the band profile results in the appearance of lateral tunneling to the underlap regions that greatly degrades the subthreshold swing of these devices. To overcome this drawback imposed by confinement, we propose an heterogate configuration that proves to suppress this parasitic tunneling and enhances the device performance.

  19. First-principle study of quantum confinement effect on small sized silicon quantum dots using density-functional theory

    International Nuclear Information System (INIS)

    Anas, M. M.; Othman, A. P.; Gopir, G.

    2014-01-01

    Density functional theory (DFT), as a first-principle approach has successfully been implemented to study nanoscale material. Here, DFT by numerical basis-set was used to study the quantum confinement effect as well as electronic properties of silicon quantum dots (Si-QDs) in ground state condition. Selection of quantum dot models were studied intensively before choosing the right structure for simulation. Next, the computational result were used to examine and deduce the electronic properties and its density of state (DOS) for 14 spherical Si-QDs ranging in size up to ∼ 2 nm in diameter. The energy gap was also deduced from the HOMO-LUMO results. The atomistic model of each silicon QDs was constructed by repeating its crystal unit cell of face-centered cubic (FCC) structure, and reconstructed until the spherical shape obtained. The core structure shows tetrahedral (T d ) symmetry structure. It was found that the model need to be passivated, and hence it was noticed that the confinement effect was more pronounced. The model was optimized using Quasi-Newton method for each size of Si-QDs to get relaxed structure before it was simulated. In this model the exchange-correlation potential (V xc ) of the electrons was treated by Local Density Approximation (LDA) functional and Perdew-Zunger (PZ) functional

  20. Strong Quantum Confinement Effects and Chiral Excitons in Bio-Inspired ZnO–Amino Acid Cocrystals

    KAUST Repository

    Muhammed, Madathumpady Abubaker Habeeb

    2018-02-20

    Elucidating the underlying principles behind band gap engineering is paramount for the successful implementation of semiconductors in photonic and optoelectronic devices. Recently it has been shown that the band gap of a wide and direct band gap semiconductor, such as ZnO, can be modified upon cocrystallization with amino acids, with the role of the biomolecules remaining unclear. Here, by probing and modeling the light-emitting properties of ZnO-amino acid cocrystals, we identify the amino acids\\' role on this band gap modulation and demonstrate their effective chirality transfer to the interband excitations in ZnO. Our 3D quantum model suggests that the strong band edge emission blue-shift in the cocrystals can be explained by a quasi-periodic distribution of amino acid potential barriers within the ZnO crystal lattice. Overall, our findings indicate that biomolecule cocrystallization can be used as a truly bio-inspired means to induce chiral quantum confinement effects in quasi-bulk semiconductors.

  1. Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

    Energy Technology Data Exchange (ETDEWEB)

    Smets, Quentin, E-mail: quentin.smets@imec.be; Verreck, Devin; Heyns, Marc M. [Imec, Kapeldreef 75, 3001 Heverlee (Belgium); KULeuven, 3000 Leuven (Belgium); Verhulst, Anne S.; Martens, Koen; Lin, Han Chung; Kazzi, Salim El; Simoen, Eddy; Collaert, Nadine; Thean, Aaron [Imec, Kapeldreef 75, 3001 Heverlee (Belgium); Raskin, Jean-Pierre [ICTEAM, Université catholique de Louvain, 1348 Louvain-la-Neuve (Belgium)

    2014-11-17

    The Tunneling Field-Effect Transistor (TFET) is a promising device for future low-power logic. Its performance is often predicted using semiclassical simulations, but there is usually a large discrepancy with experimental results. An important reason is that Field-Induced Quantum Confinement (FIQC) is neglected. Quantum mechanical simulations show FIQC delays the onset of Band-To-Band Tunneling (BTBT) with hundreds of millivolts in the promising line-TFET configuration. In this letter, we provide experimental verification of this delayed onset. We accomplish this by developing a method where line-TFET are modeled using highly doped MOS capacitors (MOS-CAP). Using capacitance-voltage measurements, we demonstrate AC inversion by BTBT, which was so far unobserved in MOS-CAP. Good agreement is shown between the experimentally obtained BTBT onset and quantum mechanical predictions, proving the need to include FIQC in all TFET simulations. Finally, we show that highly doped MOS-CAP is promising for characterization of traps deep into the conduction band.

  2. Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

    International Nuclear Information System (INIS)

    Smets, Quentin; Verreck, Devin; Heyns, Marc M.; Verhulst, Anne S.; Martens, Koen; Lin, Han Chung; Kazzi, Salim El; Simoen, Eddy; Collaert, Nadine; Thean, Aaron; Raskin, Jean-Pierre

    2014-01-01

    The Tunneling Field-Effect Transistor (TFET) is a promising device for future low-power logic. Its performance is often predicted using semiclassical simulations, but there is usually a large discrepancy with experimental results. An important reason is that Field-Induced Quantum Confinement (FIQC) is neglected. Quantum mechanical simulations show FIQC delays the onset of Band-To-Band Tunneling (BTBT) with hundreds of millivolts in the promising line-TFET configuration. In this letter, we provide experimental verification of this delayed onset. We accomplish this by developing a method where line-TFET are modeled using highly doped MOS capacitors (MOS-CAP). Using capacitance-voltage measurements, we demonstrate AC inversion by BTBT, which was so far unobserved in MOS-CAP. Good agreement is shown between the experimentally obtained BTBT onset and quantum mechanical predictions, proving the need to include FIQC in all TFET simulations. Finally, we show that highly doped MOS-CAP is promising for characterization of traps deep into the conduction band

  3. Atomic Models for Motional Stark Effects Diagnostics

    Energy Technology Data Exchange (ETDEWEB)

    Gu, M F; Holcomb, C; Jayakuma, J; Allen, S; Pablant, N A; Burrell, K

    2007-07-26

    We present detailed atomic physics models for motional Stark effects (MSE) diagnostic on magnetic fusion devices. Excitation and ionization cross sections of the hydrogen or deuterium beam traveling in a magnetic field in collisions with electrons, ions, and neutral gas are calculated in the first Born approximation. The density matrices and polarization states of individual Stark-Zeeman components of the Balmer {alpha} line are obtained for both beam into plasma and beam into gas models. A detailed comparison of the model calculations and the MSE polarimetry and spectral intensity measurements obtained at the DIII-D tokamak is carried out. Although our beam into gas models provide a qualitative explanation for the larger {pi}/{sigma} intensity ratios and represent significant improvements over the statistical population models, empirical adjustment factors ranging from 1.0-2.0 must still be applied to individual line intensities to bring the calculations into full agreement with the observations. Nevertheless, we demonstrate that beam into gas measurements can be used successfully as calibration procedures for measuring the magnetic pitch angle through {pi}/{sigma} intensity ratios. The analyses of the filter-scan polarization spectra from the DIII-D MSE polarimetry system indicate unknown channel and time dependent light contaminations in the beam into gas measurements. Such contaminations may be the main reason for the failure of beam into gas calibration on MSE polarimetry systems.

  4. Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

    Directory of Open Access Journals (Sweden)

    Debashis De

    2011-07-01

    Full Text Available The photoemission from quantum wires and dots of effective mass superlattices of optoelectronic materials was investigated on the basis of newly formulated electron energy spectra, in the presence of external light waves, which controls the transport properties of ultra-small electronic devices under intense radiation. The effect of magnetic quantization on the photoemission from the aforementioned superlattices, together with quantum well superlattices under magnetic quantization, has also been investigated in this regard. It appears, taking HgTe/Hg1−xCdxTe and InxGa1−xAs/InP effective mass superlattices, that the photoemission from these quantized structures is enhanced with increasing photon energy in quantized steps and shows oscillatory dependences with the increasing carrier concentration. In addition, the photoemission decreases with increasing light intensity and wavelength as well as with increasing thickness exhibiting oscillatory spikes. The strong dependence of the photoemission on the light intensity reflects the direct signature of light waves on the carrier energy spectra. The content of this paper finds six different applications in the fields of low dimensional systems in general.

  5. Charge transfer, lattice distortion, and quantum confinement effects in Pd, Cu, and Pd-Cu nanoparticles; size and alloying induced modifications in binding energy

    International Nuclear Information System (INIS)

    Sengar, Saurabh K.; Mehta, B. R.; Gupta, Govind

    2011-01-01

    In this letter, effect of size and alloying on the core and valence band shifts of Pd, Cu, and Pd-Cu alloy nanoparticles has been studied. It has been shown that the sign and magnitude of the binding energy shifts is determined by the contributions of different effects; with quantum confinement and lattice distortion effects overlapping for size induced shifts in case of core levels and lattice distortion and charge transfer effects overlapping for alloying induced shifts at smaller sizes. These results are important for understanding gas molecule-solid surface interaction in metal and alloy nanoparticles in terms of valance band positions.

  6. Strong quantum confinement effect in Cu{sub 4}SnS{sub 4} quantum dots synthesized via an improved hydrothermal approach

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yuehui; Ma, Ligang; Yin, Yan; Qian, Xu; Zhou, Guotai; Gu, Xiaomin [National Laboratory of Solid State Microstructures and Photovoltaic Engineering Center, Department of Physics, Nanjing University, Nanjing (China); Liu, Wenchao, E-mail: wcliu@nju.edu.cn [National Laboratory of Solid State Microstructures and Photovoltaic Engineering Center, Department of Physics, Nanjing University, Nanjing (China); Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials - SICAM, Nanjing Tech University - NanjingTech, Nanjing (China); Wu, Xiaoshan, E-mail: xswu@nju.edu.cn [National Laboratory of Solid State Microstructures and Photovoltaic Engineering Center, Department of Physics, Nanjing University, Nanjing (China); Zhang, Fengming [National Laboratory of Solid State Microstructures and Photovoltaic Engineering Center, Department of Physics, Nanjing University, Nanjing (China)

    2016-07-05

    We developed an improved hydrothermal method with water-oil two-phase reaction system to synthesize size-controllable and oil-soluble Cu{sub 4}SnS{sub 4} (CTS) quantum dots (QDs). The water-oil interface played an important role in controlling nuclei process, growth speed, crystal size and size-distribution of CTS QDs. X-ray diffraction, Raman scattering and transmission electron microscopy studies suggested that the formation and growth mechanism of CTS QDs was revealed to involve three steps. The crystallographic orientation of the CTS nanoprism was analyzed in detail. The blue-shift of absorption edge and broadening of Raman bands were observed due to the quantum confinement effect. The exciton Bohr radius of CTS QDs was calculated to be 3.3–5.8 nm by using the first principle calculation. The size dependence of band-gaps of CTS QDs follows the particle-in-a-box effective-mass model. The ability to fabricate high-quality CTS QDs certainly facilitates the solar cell applications. - Highlights: • We develop an improved hydrothermal method to synthesize monodisperse CTS QDs. • The size can be controlled through controlling the oil/water ratio. • The quantum confinement effect is confirmed by experiments and calculation.

  7. Quantum confinement effects on the thermoelectric figure of merit in Si/Si{sub 1{minus}x}Ge{sub x} system

    Energy Technology Data Exchange (ETDEWEB)

    Sun, X; Dresselhaus, M S; Wang, K L; Tanner, M O

    1997-07-01

    The Si/Si{sub 1{minus}x}Ge{sub x} quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. The authors report here theoretical calculations for Z in this system, and results from theoretical modeling of quantum confinement effects in the presence of {delta}-doping within the barrier layers. The {delta}-doping layers are introduced by growing very thin layers of wide band gap materials within the barrier layers in order to increase the effective barrier height within the barriers and thereby reduce the barrier width necessary for the quantum confinement of carriers within the quantum well. The overall figure of merit is thereby enhanced due to the reduced barrier width and hence reduced thermal conductivity, {kappa}. The {delta}-doping should further reduce {kappa} in the barriers by introducing phonon scattering centers within the barrier region. The temperature dependence of Z for Si quantum wells is also discussed.

  8. The stark effect in intense field. 2

    International Nuclear Information System (INIS)

    Popov, V.S.; Mur, V.D.; Sergeev, A.V.; Weinberg, V.M.

    1987-01-01

    The problem of hydrogen atom in homogeneous electric field is considered. The Stark shifts and widths of atomic levels are computed by summation of divergent perturbation series and by 1/n-expansion - up to E values comparable with the field on the electron orbit. The results of the calculations are presented for the following sequences of states: |n 1 ,0,0>, |0,n 2 ,0>, |n 1 ,n 1 ,0>, as well as for all states with n=2 and 3 (n is the principal quantum number). The Stark shifts and widths of Rydberg states (with n=15-30) in electric field which exceeds the classical ionization threshold are computed. The results of our calculations agree with experiment

  9. Variable scaling method and Stark effect in hydrogen atom

    International Nuclear Information System (INIS)

    Choudhury, R.K.R.; Ghosh, B.

    1983-09-01

    By relating the Stark effect problem in hydrogen-like atoms to that of the spherical anharmonic oscillator we have found simple formulas for energy eigenvalues for the Stark effect. Matrix elements have been calculated using 0(2,1) algebra technique after Armstrong and then the variable scaling method has been used to find optimal solutions. Our numerical results are compared with those of Hioe and Yoo and also with the results obtained by Lanczos. (author)

  10. Stark--Zeeman effect of metastable hydrogen molecules

    International Nuclear Information System (INIS)

    Kagann, R.H.

    1975-01-01

    The Stark effect of the N = 1 rotational level of orthohydrogen and the N = 2 rotational level of parahydrogen in the metastable c 3 PI/sub u/ electronic state has been measured using the molecular beam magnetic resonance method. The Stark effect of the metastable state is 10,000 times larger than that of the ground electronic state. The Stark effect of parahydrogen was found to be weakly dependent on static magnetic field strength, whereas the Stark effect of orthohydrogen was found to be more strongly dependent on the magnetic field strength. The Stark effect of orthohydrogen has been calculated using second-order perturbation theory with a pure Stark effect perturbation. The magnetic field dependence of the Stark effect was calculated using third-order perturbation theory with a mixed Stark--Zeeman effect double perturbation. A comparison of the experimental and theoretical values of α/sub perpendicular/ provides information on the electronic transition moment connecting the c 3 PI/sub u/ state to the a 3 Σ + /sub g/ state. The transition moment is needed to calculate the radiative lifetimes of the various vibrational levels of the c 3 PI/sub u/ state. The transition moment also enters the calculation of the quenching of this metastable state by an external electric field. There is a disagreement between theoretical predictions and the results of an experiment on the electric field quenching of the metastables. A test of the electronic transition moment may help shed light on this question. The experimental determination of the values of the transition moments allows one to test theory by comparing these values to those obtained by calculations employing ab initio wavefunctions

  11. Valley-selective optical Stark effect probed by Kerr rotation

    Science.gov (United States)

    LaMountain, Trevor; Bergeron, Hadallia; Balla, Itamar; Stanev, Teodor K.; Hersam, Mark C.; Stern, Nathaniel P.

    2018-01-01

    The ability to monitor and control distinct states is at the heart of emerging quantum technologies. The valley pseudospin in transition metal dichalcogenide (TMDC) monolayers is a promising degree of freedom for such control, with the optical Stark effect allowing for valley-selective manipulation of energy levels in WS2 and WSe2 using ultrafast optical pulses. Despite these advances, understanding of valley-sensitive optical Stark shifts in TMDCs has been limited by reflectance-based detection methods where the signal is small and prone to background effects. More sensitive polarization-based spectroscopy is required to better probe ultrafast Stark shifts for all-optical manipulation of valley energy levels. Here, we show time-resolved Kerr rotation to be a more sensitive probe of the valley-selective optical Stark effect in monolayer TMDCs. Compared to the established time-resolved reflectance methods, Kerr rotation is less sensitive to background effects. Kerr rotation provides a fivefold improvement in the signal-to-noise ratio of the Stark effect optical signal and a more precise estimate of the energy shift. This increased sensitivity allows for observation of an optical Stark shift in monolayer MoS2 that exhibits both valley and energy selectivity, demonstrating the promise of this method for investigating this effect in other layered materials and heterostructures.

  12. Stark shift and g-factor tuning in nanowires with Rashba effect

    Energy Technology Data Exchange (ETDEWEB)

    Alhaddad, Iman; Habanjar, Khulud [Department of Physics, Faculty of Science, Beirut Arab University, P.O. Box 11, 5020 Riad El Solh, 11072809 - Beirut (Lebanon); Sakr, M.R., E-mail: msakr@alexu.edu.eg [Department of Physics, Faculty of Science, Beirut Arab University, P.O. Box 11, 5020 Riad El Solh, 11072809 - Beirut (Lebanon); Department of Physics, Faculty of Science, Alexandria University, Moharram Bek, Alexandria 21511 (Egypt)

    2015-10-15

    We report on the Stark shift of the energy subbands and the possibility of tuning the g-factor of electrons in nanowires subjected to external magnetic field. The electric field is applied along the direction of quantum confinement. Our analysis is based on numerical and perturbation calculations in the weak Rashba regime. For in-plane magnetic fields, the Stark shift is rigid and depends on the square of the electric field. Such rigid shift results in a field independent g-factor. Perpendicular magnetic fields induce a similar Stark shift accompanied by a lateral displacement of the energy spectra that is linear in the electric field. In this case, the g-factor shows square dependence on weak electric fields that varies with the subband index. However, in strong electric fields, the g-factor becomes subband independent and varies linearly with the field. - Highlights: • Energy spectra of electrons in nanowires are calculated in the weak Rashba regime. • For in-plane magnetic field, the Stark shift is rigid and the g-factor cannot be tuned. • Perpendicular magnetic fields add lateral displacement to the Stark shift. • The g-factor can be tuned by external electric field in this case. • The tuning of the g-factor is linear and unique for all subbands at high fields.

  13. Stark shift and g-factor tuning in nanowires with Rashba effect

    International Nuclear Information System (INIS)

    Alhaddad, Iman; Habanjar, Khulud; Sakr, M.R.

    2015-01-01

    We report on the Stark shift of the energy subbands and the possibility of tuning the g-factor of electrons in nanowires subjected to external magnetic field. The electric field is applied along the direction of quantum confinement. Our analysis is based on numerical and perturbation calculations in the weak Rashba regime. For in-plane magnetic fields, the Stark shift is rigid and depends on the square of the electric field. Such rigid shift results in a field independent g-factor. Perpendicular magnetic fields induce a similar Stark shift accompanied by a lateral displacement of the energy spectra that is linear in the electric field. In this case, the g-factor shows square dependence on weak electric fields that varies with the subband index. However, in strong electric fields, the g-factor becomes subband independent and varies linearly with the field. - Highlights: • Energy spectra of electrons in nanowires are calculated in the weak Rashba regime. • For in-plane magnetic field, the Stark shift is rigid and the g-factor cannot be tuned. • Perpendicular magnetic fields add lateral displacement to the Stark shift. • The g-factor can be tuned by external electric field in this case. • The tuning of the g-factor is linear and unique for all subbands at high fields

  14. Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects

    Directory of Open Access Journals (Sweden)

    Daisuke Kosemura

    2014-01-01

    Full Text Available 100-nm-thick nanocrystalline silicon (nano-Si-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 5–6 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ∼ 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.

  15. Effects of strain and quantum confinement in optically pumped nuclear magnetic resonance in GaAs: Interpretation guided by spin-dependent band structure calculations

    Science.gov (United States)

    Wood, R. M.; Saha, D.; McCarthy, L. A.; Tokarski, J. T.; Sanders, G. D.; Kuhns, P. L.; McGill, S. A.; Reyes, A. P.; Reno, J. L.; Stanton, C. J.; Bowers, C. R.

    2014-10-01

    A combined experimental-theoretical study of optically pumped nuclear magnetic resonance (OPNMR) has been performed in a GaAs /A l0.1G a0.9As quantum well film epoxy bonded to a Si substrate with thermally induced biaxial strain. The photon energy dependence of the Ga OPNMR signal was recorded at magnetic fields of 4.9 and 9.4 T at a temperature of 4.8-5.4 K. The data were compared to the nuclear spin polarization calculated from the electronic structure and differential absorption to spin-up and spin-down states of the electron conduction band using a modified k .p model based on the Pidgeon-Brown model. Comparison of theory with experiment facilitated the assignment of features in the OPNMR energy dependence to specific interband Landau level transitions. The results provide insight into how effects of strain and quantum confinement are manifested in optical nuclear polarization in semiconductors.

  16. An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II. Application—Effect of quantum confinement and homogeneous strain on Cu conductance

    Science.gov (United States)

    Hegde, Ganesh; Povolotskyi, Michael; Kubis, Tillmann; Charles, James; Klimeck, Gerhard

    2014-03-01

    The Semi-Empirical tight binding model developed in Part I Hegde et al. [J. Appl. Phys. 115, 123703 (2014)] is applied to metal transport problems of current relevance in Part II. A systematic study of the effect of quantum confinement, transport orientation, and homogeneous strain on electronic transport properties of Cu is carried out. It is found that quantum confinement from bulk to nanowire boundary conditions leads to significant anisotropy in conductance of Cu along different transport orientations. Compressive homogeneous strain is found to reduce resistivity by increasing the density of conducting modes in Cu. The [110] transport orientation in Cu nanowires is found to be the most favorable for mitigating conductivity degradation since it shows least reduction in conductance with confinement and responds most favorably to compressive strain.

  17. An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II. Application—Effect of quantum confinement and homogeneous strain on Cu conductance

    International Nuclear Information System (INIS)

    Hegde, Ganesh; Povolotskyi, Michael; Kubis, Tillmann; Charles, James; Klimeck, Gerhard

    2014-01-01

    The Semi-Empirical tight binding model developed in Part I Hegde et al. [J. Appl. Phys. 115, 123703 (2014)] is applied to metal transport problems of current relevance in Part II. A systematic study of the effect of quantum confinement, transport orientation, and homogeneous strain on electronic transport properties of Cu is carried out. It is found that quantum confinement from bulk to nanowire boundary conditions leads to significant anisotropy in conductance of Cu along different transport orientations. Compressive homogeneous strain is found to reduce resistivity by increasing the density of conducting modes in Cu. The [110] transport orientation in Cu nanowires is found to be the most favorable for mitigating conductivity degradation since it shows least reduction in conductance with confinement and responds most favorably to compressive strain

  18. An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II. Application—Effect of quantum confinement and homogeneous strain on Cu conductance

    Energy Technology Data Exchange (ETDEWEB)

    Hegde, Ganesh, E-mail: ghegde@purdue.edu; Povolotskyi, Michael; Kubis, Tillmann; Charles, James; Klimeck, Gerhard, E-mail: gekco@purdue.edu [Network for Computational Nanotechnology (NCN), Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

    2014-03-28

    The Semi-Empirical tight binding model developed in Part I Hegde et al. [J. Appl. Phys. 115, 123703 (2014)] is applied to metal transport problems of current relevance in Part II. A systematic study of the effect of quantum confinement, transport orientation, and homogeneous strain on electronic transport properties of Cu is carried out. It is found that quantum confinement from bulk to nanowire boundary conditions leads to significant anisotropy in conductance of Cu along different transport orientations. Compressive homogeneous strain is found to reduce resistivity by increasing the density of conducting modes in Cu. The [110] transport orientation in Cu nanowires is found to be the most favorable for mitigating conductivity degradation since it shows least reduction in conductance with confinement and responds most favorably to compressive strain.

  19. Electronic structure and lattice relaxations in quantum confined Pb films

    NARCIS (Netherlands)

    Mans, A.

    2005-01-01

    Epitaxial films that are only several atoms layers thick exhibit interesting properties associated with quantum confinement. The electrons form standing waves, just like a violin string, clamped at both ends. In ultrathin lead films, this so-called `quantum size effect' (QSE) alters the physical

  20. A Review of Quantum Confinement

    Science.gov (United States)

    Connerade, Jean-Patrick

    2009-12-01

    A succinct history of the Confined Atom problem is presented. The hydrogen atom confined to the centre of an impenetrable sphere counts amongst the exactly soluble problems of physics, alongside much more noted exact solutions such as Black Body Radiation and the free Hydrogen atom in absence of any radiation field. It shares with them the disadvantage of being an idealisation, while at the same time encapsulating in a simple way particular aspects of physical reality. The problem was first formulated by Sommerfeld and Welker [1]—henceforth cited as SW—in connection with the behaviour of atoms at very high pressures, and the solution was published on the occasion of Pauli's 60th birthday celebration. At the time, it seemed that there was not much other connection with physical reality beyond a few simple aspects connected to the properties of atoms in solids, for which more appropriate models were soon developed. Thus, confined atoms attracted little attention until the advent of the metallofullerene, which provided the first example of a confined atom with properties quite closely related to those originally considered by SW. Since then, the problem has received much more attention, and many more new features of quantum confinement, quantum compression, the quantum Faraday cage, electronic reorganisation, cavity resonances, etc have been described, which are relevant to real systems. Also, a number of other situations have been uncovered experimentally to which quantum confinement is relevant. Thus, studies of the confined atom are now more numerous, and have been extended both in terms of the models used and the systems to which they can be applied. Connections to thermodynamics are explored through the properties of a confined two-level atom adapted from Einstein's celebrated model, and issues of dynamical screening of electromagnetic radiation by the confining shell are discussed in connection with the Faraday cage produced by a confining conducting shell

  1. A Review of Quantum Confinement

    International Nuclear Information System (INIS)

    Connerade, Jean-Patrick

    2009-01-01

    A succinct history of the Confined Atom problem is presented. The hydrogen atom confined to the centre of an impenetrable sphere counts amongst the exactly soluble problems of physics, alongside much more noted exact solutions such as Black Body Radiation and the free Hydrogen atom in absence of any radiation field. It shares with them the disadvantage of being an idealisation, while at the same time encapsulating in a simple way particular aspects of physical reality. The problem was first formulated by Sommerfeld and Welker - henceforth cited as SW - in connection with the behaviour of atoms at very high pressures, and the solution was published on the occasion of Pauli's 60th birthday celebration. At the time, it seemed that there was not much other connection with physical reality beyond a few simple aspects connected to the properties of atoms in solids, for which more appropriate models were soon developed. Thus, confined atoms attracted little attention until the advent of the metallofullerene, which provided the first example of a confined atom with properties quite closely related to those originally considered by SW. Since then, the problem has received much more attention, and many more new features of quantum confinement, quantum compression, the quantum Faraday cage, electronic reorganisation, cavity resonances, etc have been described, which are relevant to real systems. Also, a number of other situations have been uncovered experimentally to which quantum confinement is relevant. Thus, studies of the confined atom are now more numerous, and have been extended both in terms of the models used and the systems to which they can be applied. Connections to thermodynamics are explored through the properties of a confined two-level atom adapted from Einstein's celebrated model, and issues of dynamical screening of electromagnetic radiation by the confining shell are discussed in connection with the Faraday cage produced by a confining conducting shell. The

  2. Measurements of the internal magnetic field using the B-Stark motional Stark effect diagnostic on DIII-D (inivited)

    Energy Technology Data Exchange (ETDEWEB)

    Pablant, N. A. [University of California-San Diego, La Jolla, California 92093 (United States); Burrell, K. H.; Groebner, R. J.; Kaplan, D. H. [General Atomics, P.O. Box 85608, San Diego, California 92186-5608 (United States); Holcomb, C. T. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

    2010-10-15

    Results are presented from the B-Stark diagnostic installed on the DIII-D tokamak. This diagnostic provides measurements of the magnitude and direction of the internal magnetic field. The B-Stark system is a version of a motional Stark effect (MSE) diagnostic based on the relative line intensities and spacing of the Stark split D{sub {alpha}} emission from injected neutral beams. This technique may have advantages over MSE polarimetry based diagnostics in future devices, such as the ITER. The B-Stark diagnostic technique and calibration procedures are discussed. The system is shown to provide accurate measurements of B{sub {theta}}/B{sub T} and |B| over a range of plasma conditions. Measurements have been made with toroidal fields in the range of 1.2-2.1 T, plasma currents in the range 0.5-2.0 MA, densities between 1.7 and 9.0x10{sup 19} m{sup -3}, and neutral beam voltages between 50 and 81 keV. The viewing direction and polarization dependent transmission properties of the collection optics are found using an in situ beam into gas calibration. These results are compared to values found from plasma equilibrium reconstructions and the MSE polarimetry system on DIII-D.

  3. Measurements of the internal magnetic field using the B-Stark motional Stark effect diagnostic on DIII-D (inivited).

    Science.gov (United States)

    Pablant, N A; Burrell, K H; Groebner, R J; Holcomb, C T; Kaplan, D H

    2010-10-01

    Results are presented from the B-Stark diagnostic installed on the DIII-D tokamak. This diagnostic provides measurements of the magnitude and direction of the internal magnetic field. The B-Stark system is a version of a motional Stark effect (MSE) diagnostic based on the relative line intensities and spacing of the Stark split D(α) emission from injected neutral beams. This technique may have advantages over MSE polarimetry based diagnostics in future devices, such as the ITER. The B-Stark diagnostic technique and calibration procedures are discussed. The system is shown to provide accurate measurements of B(θ)/B(T) and ∣B∣ over a range of plasma conditions. Measurements have been made with toroidal fields in the range of 1.2-2.1 T, plasma currents in the range 0.5-2.0 MA, densities between 1.7 and 9.0×10(19) m(-3), and neutral beam voltages between 50 and 81 keV. The viewing direction and polarization dependent transmission properties of the collection optics are found using an in situ beam into gas calibration. These results are compared to values found from plasma equilibrium reconstructions and the MSE polarimetry system on DIII-D.

  4. Stark effect in Rydberg states of helium and barium

    International Nuclear Information System (INIS)

    Lahaije, C.T.W.

    1989-01-01

    This thesis, which deals with the effect of an electric field up to moderate field strengths on atoms with two valence electrons outside closed shells, in casu helium and barium, contains chapter in which the linear Stark effect in the 1 snp 1, 3 p Rydberg states of helium (n around 40) has been studied in a CW laser-atomic beam experiment. The evolution of the angular momentum manifolds into the n-mixing regime was followed and avoided level crossings were observed. Stark manifolds were also calculated by diagonalization of the complete energy matrix in the presence of an electric field. It turned out to be necessary to include up to five n-values in the calculations already at moderate values of the field to reproduce the data within the experimental accuracy (a few MHz), especially in the regime of the avoided crossings. (author). 147 refs.; 30 figs.; 8 tabs

  5. Design and theoretical calculation of novel GeSn fully-depleted n-tunneling FET with quantum confinement model for suppression on GIDL effect

    Science.gov (United States)

    Liu, Xiangyu; Hu, Huiyong; Wang, Meng; Miao, Yuanhao; Han, Genquan; Wang, Bin

    2018-06-01

    In this paper, a novel fully-depleted Ge1-xSnx n-Tunneling FET (FD Ge1-xSnx nTFET) with field plate is investigated theoretically based on the experiment previously published. The energy band structures of Ge1-xSnx are calculated by EMP and the band-to-band tunneling (BTBT) parameters of Ge1-xSnx are calculated by Kane's model. The electrical characteristics of FD Ge1-xSnx nTFET and FD Ge1-xSnx nTFET with field plate (FD-FP Ge1-xSnx nTFET) having various Sn compositions are investigated and simulated with quantum confinement model. The results indicated that the GIDL effect is serious in FD Ge1-xSnx nTFET. By employing the field plate structure, the GIDL effect of FD-FP Ge1-xSnx nTFET is suppressed and the off-state current Ioff is decreased more than 2 orders of magnitude having Sn compositions from 0 to 0.06 compared with FD Ge1-xSnx nTFET. The impact of the difference of work function between field plate metal and channel Φfps is also studied. With the optimized Φfps = 0.0 eV, the on-state current Ion = 4.6 × 10-5 A/μm, the off-state current Ioff = 1.6 × 10-13 A/μm and the maximum on/off ration Ion/Ioff = 2.9 × 108 are achieved.

  6. Imaging motional Stark effect measurements at ASDEX Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Ford, O. P.; Burckhart, A.; McDermott, R.; Pütterich, T.; Wolf, R. C. [Max-Planck Institut für Plasmaphysik, Greifswald/Garching (Germany)

    2016-11-15

    This paper presents an overview of results from the Imaging Motional Stark Effect (IMSE) diagnostic obtained during its first measurement campaign at ASDEX Upgrade since installation as a permanent diagnostic. A brief overview of the IMSE technique is given, followed by measurements of a standard H-mode discharge, which are compared to equilibrium reconstructions showing good agreement where expected. The development of special discharges for the calibration of pitch angle is reported and safety factor profile changes during sawteeth crashes are shown, which can be resolved to a few percent due to the high sensitivity at good time resolution of the new IMSE system.

  7. Lack of quantum confinement in Ga2O3 nanolayers

    Science.gov (United States)

    Peelaers, Hartwin; Van de Walle, Chris G.

    2017-08-01

    β -Ga2Ox3 is a wide-band-gap semiconductor with promising applications in transparent electronics and in power devices. β -Ga2O3 has monoclinic crystal symmetry and does not display a layered structured characteristic of 2D materials in the bulk; nevertheless, monolayer-thin Ga2O3 layers can be created. We used first-principles techniques to investigate the structural and electronic properties of these nanolayers. Surprisingly, freestanding films do not exhibit any signs of quantum confinement and exhibit the same electronic structure as bulk material. A detailed examination reveals that this can be attributed to the presence of states that are strongly confined near the surface. When the Ga2O3 layers are embedded in a wider band-gap material such as Al2O3 , the expected effects of quantum confinement can be observed. The effective mass of electrons in all the nanolayers is small, indicating promising device applications.

  8. Dynamic Stark broadening as the Dicke narrowing effect

    International Nuclear Information System (INIS)

    Calisti, A.; Mosse, C.; Ferri, S.; Talin, B.; Rosmej, F.; Bureyeva, L. A.; Lisitsa, V. S.

    2010-01-01

    A very fast method to account for charged particle dynamics effects in calculations of spectral line shape emitted by plasmas is presented. This method is based on a formulation of the frequency fluctuation model (FFM), which provides an expression of the dynamic line shape as a functional of the static distribution of frequencies. Thus, the main numerical work rests on the calculation of the quasistatic Stark profile. This method for taking into account ion dynamics allows a very fast and accurate calculation of Stark broadening of atomic hydrogen high-n series emission lines. It is not limited to hydrogen spectra. Results on helium-β and Lyman-α lines emitted by argon in microballoon implosion experiment conditions compared with experimental data and simulation results are also presented. The present approach reduces the computer time by more than 2 orders of magnitude as compared with the original FFM with an improvement of the calculation precision, and it opens broad possibilities for its application in spectral line-shape codes.

  9. Dipole transitions and Stark effect in the charge-dyon system

    International Nuclear Information System (INIS)

    Mardoyan, Levon; Nersessian, Armen; Sarkisyan, Hayk; Yeghikyan, Vahagn

    2007-01-01

    We consider the dipole transitions and the linear and quadratic Stark effects in the MICZ-Kepler system interpreted as a charge-dyon system. We show that while the linear Stark effect in the ground state is proportional to the azimuth quantum number (and to the sign of the monopole number), the quadratic Stark effect in the ground state is independent of the signs of the azimuth and monopole numbers

  10. Improved signal analysis for motional Stark effect data

    International Nuclear Information System (INIS)

    Makowski, M.A.; Allen, S.L.; Ellis, R.; Geer, R.; Jayakumar, R.J.; Moller, J.M.; Rice, B.W.

    2005-01-01

    Nonideal effects in the optical train of the motional Stark effect diagnostic have been modeled using the Mueller matrix formalism. The effects examined are birefringence in the vacuum windows, an imperfect reflective mirror, and signal pollution due to the presence of a circularly polarized light component. Relations for the measured intensity ratio are developed for each case. These relations suggest fitting functions to more accurately model the calibration data. One particular function, termed the tangent offset model, is found to fit the data for all channels better than the currently used tangent slope function. Careful analysis of the calibration data with the fitting functions reveals that a nonideal effect is present in the edge array and is attributed to nonideal performance of a mirror in that system. The result of applying the fitting function to the analysis of our data has been to improve the equilibrium reconstruction

  11. O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning

    International Nuclear Information System (INIS)

    Chaisakul, Papichaya; Marris-Morini, Delphine; Vakarin, Vladyslav; Vivien, Laurent; Frigerio, Jacopo; Chrastina, Daniel; Isella, Giovanni

    2014-01-01

    We report an O-band optical modulator from a Ge/Si 0.15 Ge 0.85 multiple quantum well (MQW). Strong O-band optical modulation in devices commonly operating within E-band wavelength range can be achieved by simply decreasing the quantum well thickness. Both spectral photocurrent and optical transmission studies are performed to evaluate material characteristics and device performance from a surface-illuminated diode and a waveguide modulator, respectively. These results demonstrate the potential of using Ge/Si 0.15 Ge 0.85 MQWs for the realization of future on-chip wavelength-division multiplexing systems with optical modulators operating at different wavelengths over a wide spectral range

  12. Stark effect measurements on monomers and trimers of reconstituted light-harvesting complex II of plants

    NARCIS (Netherlands)

    Palacios, M.A.; Caffarri, S.; Bassi, R.; Grondelle, van R.; Amerongen, van H.

    2004-01-01

    The electric-field induced absorption changes (Stark effect) of reconstituted light-harvesting complex II (LHCII) in different oligomerisation states - monomers and trimers - with different xanthophyll content have been probed at 77 K. The Stark spectra of the reconstituted control samples,

  13. Ab initio modeling of the motional Stark effect on MAST

    International Nuclear Information System (INIS)

    De Bock, M. F. M.; Conway, N. J.; Walsh, M. J.; Carolan, P. G.; Hawkes, N. C.

    2008-01-01

    A multichord motional Stark effect (MSE) system has recently been built on the MAST tokamak. In MAST the π and σ lines of the MSE spectrum overlap due to the low magnetic field typical for present day spherical tokamaks. Also, the field curvature results in a large change in the pitch angle over the observation volume. The measured polarization angle does not relate to one local pitch angle but to an integration over all pitch angles in the observation volume. The velocity distribution of the neutral beam further complicates the measurement. To take into account volume effects and velocity distribution, an ab initio code was written that simulates the MSE spectrum on MAST. The code is modular and can easily be adjusted for other tokamaks. The code returns the intensity, polarized fraction, and polarization angle as a function of wavelength. Results of the code are presented, showing the effect on depolarization and wavelength dependence of the polarization angle. The code is used to optimize the design and calibration of the MSE diagnostic.

  14. The motional stark effect with laser-induced fluorescence diagnostic

    Science.gov (United States)

    Foley, E. L.; Levinton, F. M.

    2010-05-01

    The motional Stark effect (MSE) diagnostic is the worldwide standard technique for internal magnetic field pitch angle measurements in magnetized plasmas. Traditionally, it is based on using polarimetry to measure the polarization direction of light emitted from a hydrogenic species in a neutral beam. As the beam passes through the magnetized plasma at a high velocity, in its rest frame it perceives a Lorentz electric field. This field causes the H-alpha emission to be split and polarized. A new technique under development adds laser-induced fluorescence (LIF) to a diagnostic neutral beam (DNB) for an MSE measurement that will enable radially resolved magnetic field magnitude as well as pitch angle measurements in even low-field (experiments. An MSE-LIF system will be installed on the National Spherical Torus Experiment (NSTX) at the Princeton Plasma Physics Laboratory. It will enable reconstructions of the plasma pressure, q-profile and current as well as, in conjunction with the existing MSE system, measurements of radial electric fields.

  15. Real-time motional Stark effect in jet

    International Nuclear Information System (INIS)

    Alves, D.; Stephen, A.; Hawkes, N.; Dalley, S.; Goodyear, A.; Felton, R.; Joffrin, E.; Fernandes, H.

    2004-01-01

    The increasing importance of real-time measurements and control systems in JET experiments, regarding e.g. Internal Transport Barrier (ITB) and q-profile control, has motivated the development of a real-time motional Stark effect (MSE) system. The MSE diagnostic allows the measurement of local magnetic fields in different locations along the neutral beam path providing, therefore, local measurement of the current and q-profiles. Recently in JET, an upgrade of the MSE diagnostic has been implemented, incorporating a totally new system which allows the use of this diagnostic as a real-time control tool as well as an extended data source for off-line analysis. This paper will briefly describe the technical features of the real-time diagnostic with main focus on the system architecture, which consists of a VME crate hosting three PowerPC processor boards and a fast ADC, all connected via Front Panel Data Port (FPDP). The DSP algorithm implements a lockin-amplifier required to demodulate the JET MSE signals. Some applications for the system will be covered such as: feeding the real-time equilibrium reconstruction code (EQUINOX) and allowing the full coverage analysis of the Neutral Beam time window. A brief comparison between the real-time MSE analysis and the off-line analysis will also be presented

  16. Stark effect and polarizability of graphene quantum dots

    DEFF Research Database (Denmark)

    Pedersen, Thomas Garm

    2017-01-01

    The properties of graphene quantum dots can be manipulated via lateral electric fields. Treating electrons in such structures as confined massless Dirac fermions, we derive an analytical expression for the quadratic Stark shift valid for arbitrary angular momentum and quantum dot size. Moreover, we...

  17. Semiconductor-metal transition induced by giant Stark effect in blue phosphorene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, Peng-Yu; Chen, Shi-Zhang; Zhou, Wu-Xing; Chen, Ke-Qiu, E-mail: keqiuchen@hnu.edu.cn

    2017-06-28

    The electronic structures and transport properties in monolayer blue phosphorene nanoribbons (BPNRs) with transverse electric field have been studied by using density functional theory and nonequilibrium Green's functions method. The results show that the band gaps of BPNRs with both armchair and zigzag edges are linearly decreased with the increasing of the strength of transverse electric field. A semiconductor-metal transition occurs when the electric field strength reaches to 5 V/nm. The Stark coefficient presents a linear dependency on BPNRs widths, and the slopes of both zBPNRs and aBPNRs are 0.41 and 0.54, respectively, which shows a giant Stark effect occurs. Our studies show that the semiconductor-metal transition originates from the giant Stark effect. - Highlights: • The electronic transport in blue phosphorene nanoribbons. • Semiconductor-metal transition can be observed. • The semiconductor-metal transition originates from the giant Stark effect.

  18. Stark effect in finite-barrier quantum wells, wires, and dots

    International Nuclear Information System (INIS)

    Pedersen, Thomas Garm

    2017-01-01

    The properties of confined carriers in low-dimensional nanostructures can be controlled by external electric fields and an important manifestation is the Stark shift of quantized energy levels. Here, a unifying analytic theory for the Stark effect in arbitrary dimensional nanostructures is presented. The crucial role of finite potential barriers is stressed, in particular, for three-dimensional confinement. Applying the theory to CdSe quantum dots, finite barriers are shown to improve significantly the agreement with experiments. (paper)

  19. Using Quantum Confinement to Uniquely Identify Devices

    Science.gov (United States)

    Roberts, J.; Bagci, I. E.; Zawawi, M. A. M.; Sexton, J.; Hulbert, N.; Noori, Y. J.; Young, M. P.; Woodhead, C. S.; Missous, M.; Migliorato, M. A.; Roedig, U.; Young, R. J.

    2015-11-01

    Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give a unique output in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, known as unique objects (UNOs) and physically unclonable functions (PUFs). The classical design of UNOs and PUFs limits their size and, in some cases, their security. Here we show that quantum confinement lends itself to the provision of unique identities at the nanoscale, by using fluctuations in tunnelling measurements through quantum wells in resonant tunnelling diodes (RTDs). This provides an uncomplicated measurement of identity without conventional resource limitations whilst providing robust security. The confined energy levels are highly sensitive to the specific nanostructure within each RTD, resulting in a distinct tunnelling spectrum for every device, as they contain a unique and unpredictable structure that is presently impossible to clone. This new class of authentication device operates with minimal resources in simple electronic structures above room temperature.

  20. Spectral-Kinetic Coupling and Effect of Microfield Rotation on Stark Broadening in Plasmas

    Directory of Open Access Journals (Sweden)

    Alexander V. Demura

    2014-07-01

    Full Text Available The study deals with two conceptual problems in the theory of Stark broadening by plasmas. One problem is the assumption of the density matrix diagonality in the calculation of spectral line profiles. This assumption is closely related to the definition of zero wave functions basis within which the density matrix is assumed to be diagonal, and obviously violated under the basis change. A consistent use of density matrix in the theoretical scheme inevitably leads to interdependence of atomic kinetics, describing the population of atomic states with the Stark profiles of spectral lines, i.e., to spectral-kinetic coupling. The other problem is connected with the study of the influence of microfield fluctuations on Stark profiles. Here the main results of the perturbative approach to ion dynamics, called the theory of thermal corrections (TTC, are presented, within which the main contribution to effects of ion dynamics is due to microfield fluctuations caused by rotations. In the present study the qualitative behavior of the Stark profiles in the line center within predictions of TTC is confirmed, using non-perturbative computer simulations.

  1. Effects of Polaron and Quantum Confinement on the Nonlinear Optical Properties in a GaAs/Ga1-xAlxAs Quantum Well Wire

    Directory of Open Access Journals (Sweden)

    L. Caroline Sugirtham

    2014-01-01

    Full Text Available The binding energy of a polaron confined in a GaAs/Ga1-xAlxAs quantum well wire is calculated within the framework of the variational technique and Lee-Low Pines approach. The polaron-induced photoionization cross section as a function of normalized photon energy for a on-centre donor impurity in the quantum wire is investigated. The oscillator strength with the geometrical effect is studied taking into account the polaron effects in a GaAs/Ga0.8Al0.2As quantum well wire. The effect of polaron on the third-order susceptibility of third harmonic generation is studied. Our theoretical results are shown to be in good agreement with previous investigations.

  2. Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

    Directory of Open Access Journals (Sweden)

    Yudi Darma

    2008-03-01

    Full Text Available Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of annealing temperature in the range of 550-800oC has been evaluated by XPS analysis and confirms the diffusion of Ge atoms from Ge core towards the Si clad accompanied by formation of GeOx at the Si clad surface. The first subband energy at the valence band of Si dot with Ge core has been measured as an energy shift at the top of the valence band density of state using XPS. The systematic shift of the valence band maximum towards higher binding energy with progressive deposition in the dot formation indicate the charging effect of dots and SiO2 layer by photoemission during measurements.

  3. Higher order Stark effect and transition probabilities on hyperfine structure components of hydrogen like atoms

    Energy Technology Data Exchange (ETDEWEB)

    Pal' chikov, V.G. [National Research Institute for Physical-Technical and Radiotechnical Measurements - VNIIFTRI (Russian Federation)], E-mail: vitpal@mail.ru

    2000-08-15

    A quantum-electrodynamical (QED) perturbation theory is developed for hydrogen and hydrogen-like atomic systems with interaction between bound electrons and radiative field being treated as the perturbation. The dependence of the perturbed energy of levels on hyperfine structure (hfs) effects and on the higher-order Stark effect is investigated. Numerical results have been obtained for the transition probability between the hfs components of hydrogen-like bismuth.

  4. Motional stark effect upgrades on DIII-D

    International Nuclear Information System (INIS)

    Rice, B.W.; Nilson, D.G.; Wroblewski, D.

    1994-04-01

    The measurement and control of the plasma current density profile (or q profile) is critical to the advanced tokamak program on DIII-D. A complete understanding of the stability and transport properties of advanced operating regimes requires detail poloidal field measurements over the entire plasma radius from the core to the edge. In support of this effort, the authors have recently completed an upgrade of the existing MSE diagnostic, increasing the number of channels from 8 to 16. A new viewing geometry has been added to the outer edge of the plasma which improves the radial resolution in this region from 10 cm to < 4 cm. This view requires the use of a reflector that has been designed to minimize polarization amplitude and phase effects. Vacuum-compatible polarizers have also been added to the instrument for in-situ calibration. Future use of the MSE diagnostic for feedback control of the q profile will also be discussed

  5. High-frequency Stark effect and two-quantum transitions

    International Nuclear Information System (INIS)

    Hildebrandt, J

    2007-01-01

    A problem which motivated a great deal of work about 20 years ago, namely, satellite lines occurring for atomic emitters undergoing a harmonic perturbation, is revisited. On a theoretical point of view, two photon mechanisms or equivalent are involved to explain those satellites due to high-frequency electric fields. Although today the activity on these problems is rather low, interest in observing such effects in the domain of x-ray spectroscopy exists, namely for hot and dense plasmas. More generally, satellites can be also seen as connected to turbulence diagnostics. This mainly motivates the design of plasmas and improvements of x-ray spectroscopy techniques. However, up to now, attempts to extend the methods of nonlinear spectroscopy to this domain have been rather disappointing. As a promotion for a resurgence of the field, an improved theory, founded on formalisms of nonlinear optics, is developed to suggest a new interpretation of the experiments. Previous publications are modified and an old problem is closed. Hopefully, this will help us to stimulate new applications of two-photon techniques in plasmas

  6. Motional Stark Effect measurements of the local magnetic field in high temperature fusion plasmas

    Science.gov (United States)

    Wolf, R. C.; Bock, A.; Ford, O. P.; Reimer, R.; Burckhart, A.; Dinklage, A.; Hobirk, J.; Howard, J.; Reich, M.; Stober, J.

    2015-10-01

    The utilization of the Motional Stark Effect (MSE) experienced by the neutral hydrogen or deuterium injected into magnetically confined high temperature plasmas is a well established technique to infer the internal magnetic field distribution of fusion experiments. In their rest frame, the neutral atoms experience a Lorentz electric field, EL = v × B, which results in a characteristic line splitting and polarized line emission. The different properties of the Stark multiplet allow inferring, both the magnetic field strength and the orientation of the magnetic field vector. Besides recording the full MSE spectrum, several types of polarimeters have been developed to measure the polarization direction of the Stark line emission. To test physics models of the magnetic field distribution and dynamics, the accuracy requirements are quite demanding. In view of these requirements, the capabilities and issues of the different techniques are discussed, including the influence of the Zeeman Effect and the sensitivity to radial electric fields. A newly developed Imaging MSE system, which has been tested on the ASDEX Upgrade tokamak, is presented. The sensitivity allows to resolve sawtooth oscillations. A shorter version of this contribution is due to be published in PoS at: 1st EPS conference on Plasma Diagnostics

  7. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    International Nuclear Information System (INIS)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-01-01

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO 2 , and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si 3 N 4 and Al 2 O 3 . Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters

  8. Quantum-confined nanowires as vehicles for enhanced electrical transport

    International Nuclear Information System (INIS)

    Mohammad, S Noor

    2012-01-01

    Electrical transport in semiconductor nanowires taking quantum confinement and dielectric confinement into account has been studied. A distinctly new route has been employed for the study. The fundamental science underlying the model is based on a relationship between the quantum confinement and the structural disorder of the nanowire surface. The role of surface energy and thermodynamic imbalance in nanowire structural disorder has been described. A model for the diameter dependence of energy bandgap of nanowires has been developed. Ionized impurity scattering, dislocation scattering and acoustic phonon scattering have been taken into account to study carrier mobility. A series of calculations on silicon nanowires show that carrier mobility in nanowires can be greatly enhanced by quantum confinement and dielectric confinement. The electron mobility can, for example, be a factor of 2–10 higher at room temperature than the mobility in a free-standing silicon nanowire. The calculated results agree well with almost all experimental and theoretical results available in the literature. They successfully explain experimental observations not understood before. The model is general and applicable to nanowires from all possible semiconductors. It is perhaps the first physical model highlighting the impact of both quantum confinement and dielectric confinement on carrier transport. It underscores the basic causes of thin, lowly doped nanowires in the temperature range 200 K ≤ T ≤ 500 K yielding very high carrier mobility. It suggests that the scattering by dislocations (stacking faults) can be very detrimental for carrier mobility. (paper)

  9. Influence of the ac Stark effect on stimulated hyper-Raman profiles in sodium vapor

    International Nuclear Information System (INIS)

    Moore, M.A.; Garrett, W.R.; Payne, M.G.

    1988-08-01

    When pumping near the two-photon 3d resonance in pure sodium vapor and observing the backward hyper-Raman emission to the 3p substates, an asymmetry in ratios of 3p/sub 1/2/, 3p/sub 3/2/ associated emissions was observed dependent upon the direction of the initial laser detuning from the resonance. It has been determined that this asymmetry can be attributed to the ac Stark effect induced by the hyper-Raman emission itself. 3 refs., 3 figs

  10. The AC Stark Effect, Time-Dependent Born-Oppenheimer Approximation, and Franck-Condon Factors

    CERN Document Server

    Hagedorn, G A; Jilcott, S W

    2005-01-01

    We study the quantum mechanics of a simple molecular system that is subject to a laser pulse. We model the laser pulse by a classical oscillatory electric field, and we employ the Born--Oppenheimer approximation for the molecule. We compute transition amplitudes to leading order in the laser strength. These amplitudes contain Franck--Condon factors that we compute explicitly to leading order in the Born--Oppenheimer parameter. We also correct an erroneous calculation in the mathematical literature on the AC Stark effect for molecular systems.

  11. Influence of quantum confinement on the carrier contribution to the elastic constants in quantum confined heavily doped non-linear optical and optoelectronic materials: simplified theory and the suggestion for experimental determination

    International Nuclear Information System (INIS)

    Baruah, D; Choudhury, S; Singh, K M; Ghatak, K P

    2007-01-01

    In this paper we study the carrier contribution to elastic constants in quantum confined heavily doped non-linear optical compounds on the basis of a newly formulated electron dispersion law taking into account the anisotropies of the effective electron masses and spin orbit splitting constants together with the proper inclusion of the crystal field splitting in the Hamiltonian within the framework of k.p formalism. All the results of heavily doped three, and two models of Kane for heavily doped III-V materials form special cases of our generalized analysis. It has been found, taking different heavily doped quantum confined materials that, the carrier contribution to the elastic constants increases with increase in electron statistics and decrease in film thickness in ladder like manners for all types of quantum confinements with different numerical values which are totally dependent on the energy band constants. The said contribution is greatest in quantum dots and least in quantum wells together with the fact the heavy doping enhances the said contributions for all types of quantum confined materials. We have suggested an experimental method of determining the carrier contribution to the elastic constants in nanostructured materials having arbitrary band structures

  12. Stark effect of optical properties of excitons in a quantum nanorod with parabolic confinement

    Energy Technology Data Exchange (ETDEWEB)

    Lyo, S.K., E-mail: sklyo@uci.edu

    2014-01-15

    We study the quantum Stark effect of optical properties of a quasi-one-dimensional quantum rod with parabolic confinement. Interplays between the competing/cooperative forces from confinement, electron–hole (e–h) attraction, and an external field are examined by studying the binding energy, the oscillator strength, and the root-mean-square (RMS) average of the e–h separation in a nonlinear electric field. In a long rod with weak confinement, the e–h interaction dominates over the confinement effect, yielding an abrupt drop of the exciton binding energy, oscillator strength, and a sudden increase of the RMS average e–h separation as the excitons are dissociated at the threshold field as the field increases. The exciton-dissociation transition is gradual in a short rod, where the confinement force dominates over the e–h attraction. We show that a DC field can induce an optically active excited exciton state in a narrow field range, causing a sharp peak in the oscillator strength and a dip in the RMS average of the e–h separation as the field increases. The Stark effects are also investigated as a function of the linear confinement length (i.e., rod length) at fixed fields. -- Highlights: • Study the dependence of optical properties of nanorods on the rod size and field. • Study the interplay between forces of confinement, Coulomb attraction, and field. • A strong field induces an optically active excited state observed in quantum dots.

  13. The giant Stark effect in armchair-edge phosphorene nanoribbons under a transverse electric field

    Science.gov (United States)

    Zhou, Benliang; Zhou, Benhu; Liu, Pu; Zhou, Guanghui

    2018-01-01

    We study the variation of electronic properties for armchair-edge phosphorene nanoribbons (APNRs) modulated by a transverse electric field. Within the tight-binding model Hamiltonian, and by solving the differential Schrödinger equation, we find that a band gap closure appears at the critical field due to the giant Stark effect for an APNR. The gap closure has no field polarity, and the gap varies quadratically for small fields but becomes linear for larger ones. We attribute the giant Stark effect to the broken edge degeneracy, i.e., the charge redistributions of the conduction band minimum and valence band maximum states localized at opposite edges induced by the field. By combined with the Green's function approach, it is shown that in the presence of the critical field a gap of density of states (DOS) disappears and a high value DOS turns up at the energy position of the band gap closure. Finally, as the field increases, we find the band gap decreases more rapidly and the gap closure occurs at smaller fields for wider ribbons. Both the band gap and DOS variations with the field show an insulator-metal transition induced by a transverse electric field for the APNR. Our results show that wider APNRs are more appreciable to design field-effect transistors.

  14. Magnetic field pitch angle diagnostic using the motional Stark effect (invited)

    International Nuclear Information System (INIS)

    Levinton, F.M.; Gammel, G.M.; Kaita, R.; Kugel, H.W.; Roberts, D.W.

    1990-01-01

    The Stark effect has been employed in a novel technique for obtaining the pitch angle profile and q(r) using polarimetry measurements of the Doppler shifted H α emission from a hydrogen diagnostic neutral beam. As a neutral beam propagates through a plasma, collisions of the beam particles with the background ions and electrons will excite beam atoms, leading to emission of radiation. The motional Stark effect, which arises from the electric field induced in the atom's rest frame due to the beam motion across the magnetic field (E=V beam xB), causes a wavelength splitting of several angstroms and polarization of the emitted radiation. The Δm=±1 transitions, or σ components, from the beam fluorescence are linearly polarized parallel to the direction of the local magnetic field when viewed transverse to the fields. Since the hydrogen beam provides good spatial localization and penetration, the pitch angle can be obtained anywhere in the plasma. A photoelastic modulator (PEM) is used to modulate the linearly polarized light. Depending on the orientation of the PEM, it can measure the sine or cosine of the angle of polarization. Two PEM's are used to measure both components simultaneously. Results of q(r) for both Ohmic and NBI heated discharges have been obtained in the Princeton Beta Experiment (PBX-M) tokamak, with an uncertainty of ∼6% for q(0)

  15. Quantum confinement in hydrogen bond of DNA and RNA

    International Nuclear Information System (INIS)

    Dos Santos, C S; Filho, E Drigo; Ricotta, R M

    2015-01-01

    The hydrogen bond is a fundamental ingredient to stabilize the DNA and RNA macromolecules. The main contribution of this work is to describe quantitatively this interaction as a consequence of the quantum confinement of the hydrogen. The results for the free and confined system are compared with experimental data. The formalism to compute the energy gap of the vibration motion used to identify the spectrum lines is the Variational Method allied to Supersymmetric Quantum Mechanics. (papert)

  16. Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

    KAUST Repository

    Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Prabaswara, Aditya; Zhao, Chao; Priante, Davide; Min, Jung-Wook; Ng, Tien Khee; Ooi, Boon S.

    2018-01-01

    to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field

  17. Gate-defined Quantum Confinement in Suspended Bilayer Graphene

    Science.gov (United States)

    Allen, Monica

    2013-03-01

    Quantum confined devices in carbon-based materials offer unique possibilities for applications ranging from quantum computation to sensing. In particular, nanostructured carbon is a promising candidate for spin-based quantum computation due to the ability to suppress hyperfine coupling to nuclear spins, a dominant source of spin decoherence. Yet graphene lacks an intrinsic bandgap, which poses a serious challenge for the creation of such devices. We present a novel approach to quantum confinement utilizing tunnel barriers defined by local electric fields that break sublattice symmetry in suspended bilayer graphene. This technique electrostatically confines charges via band structure control, thereby eliminating the edge and substrate disorder that hinders on-chip etched nanostructures to date. We report clean single electron tunneling through gate-defined quantum dots in two regimes: at zero magnetic field using the energy gap induced by a perpendicular electric field and at finite magnetic fields using Landau level confinement. The observed Coulomb blockade periodicity agrees with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates quantum confinement with pristine device quality and access to vibrational modes, enabling wide applications from electromechanical sensors to quantum bits. More broadly, the ability to externally tailor the graphene bandgap over nanometer scales opens a new unexplored avenue for creating quantum devices.

  18. Laser-induced fluorescences due to quadrupole moment transition and Stark effect in a He glow discharge

    International Nuclear Information System (INIS)

    Sakai, Hisashi; Takiyama, Ken; Kimura, Masahiko; Yamasaki, Motokuni; Fujita, Toshiaki; Oda, Toshiatsu; Kawasaki, Ken.

    1993-01-01

    The electric quadrupole moment transition and the Stark effect are investigated in a He hollow cathode discharge with laser-induced fluorescence method. It is shown that the forbidden transition from 2 1 S to 3 1 D in the negative glow is dominantly due to the quadrupole moment transition. This absorption coefficient is obtained from the laser-induced fluorescence intensity measurement in which the collisional transfers are taken into account. The result agrees with the theoretical coefficient. In the cathode dark space the fluorescence due to the Stark effect is also observed. Spatial distribution of the fluorescence is discussed, compared with the electric field distribution in the dark space. (author)

  19. A New Analysis of Stark and Zeeman Effects on Hydrogen Lines in Magnetized DA White Dwarfs

    Directory of Open Access Journals (Sweden)

    Ny Kieu

    2017-11-01

    Full Text Available White dwarfs with magnetic field strengths larger than 10 T are understood to represent more than 10% of the total population of white dwarfs. The presence of such strong magnetic fields is clearly indicated by the Zeeman triplet structure visible on absorption lines. In this work, we discuss the line broadening mechanisms and focus on the sensitivity of hydrogen lines on the magnetic field. We perform new calculations in conditions relevant to magnetized DA stellar atmospheres using models inspired from magnetic fusion plasma spectroscopy. A white dwarf spectrum from the Sloan Digital Sky Survey (SDSS database is analyzed. An effective temperature is provided by an adjustment of the background radiation with a Planck function, and the magnetic field is inferred from absorption lines presenting a Zeeman triplet structure. An order-of-magnitude estimate for the electron density is also performed from Stark broadening analysis.

  20. Stark Broadening and White Dwarfs

    Directory of Open Access Journals (Sweden)

    Dimitrijević Milan S.

    2011-12-01

    Full Text Available White dwarf and pre-white dwarfs are the best types of stars for the application of Stark broadening research results in astrophysics, since in the atmospheres of these stars physical conditions are very favorable for this line broadening mechanism - in hot hydrogen-deficient white dwarfs and pre-white dwarfs Teff = 75 000–180 000 K and log g = 5.5–8 [cgs]. Even for much cooler DA and DB white dwarfs with the typical effective temperatures 10 000-20 000 K, Stark broadening is usually the dominant broadening mechanism. In this review, Stark broadening in white dwarf spectra is considered, and the attention is drawn to the STARK-B database (http://stark-b.obspm.fr/, containing the parameters needed for analysis and synthesis of white dwarf spectra, as well as for the collective efforts to develop the Virtual Atomic and Molecular Data Center.

  1. The Stark effect of 1H and 4He+ in the beam foil source

    International Nuclear Information System (INIS)

    Doobov, M.H.; Hay, H.J.; Sofield, C.J.; Newton, C.S.

    1974-01-01

    The appearance of Stark patterns obtained with a beam-foil source differed from those characteristically obtained from gas discharge sources. In the former source excitation of the hydrogenic ions occurred in a brief time interval ( 14 s) during the passage of a high velocity unidirectional beam of ions which produces non-statistical population distributions for the Stark perturbed states. The relative intensities of Stark perturbed components of the Hsub(β) hydrogen line and the Fsub(α) ionized helium line have been measured in a beam-foil source. In each case an initial population of states of principal quantum number n = 4 due to radiative decay and Stark mixing, and comparing the resultant patterns with the observed patterns. The inferred population distributions indicate that the states of low orbital angular momentum (L) are preferentially populated, and alignment referred to the beam axis is produced such that states with lower z component of L are preferentially populated. (author)

  2. Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

    International Nuclear Information System (INIS)

    Pi Xiao-Dong; Wang Rong; Yang De-Ren

    2014-01-01

    In the framework of density functional theory (DFT), we have studied the electronic properties of alkene/alkyne-hydrosilylated silicon nanocrystals (Si NCs) in the size range from 0.8 nm to 1.6 nm. Among the alkenes with all kinds of functional groups considered in this work, only those containing —NH 2 and —C 4 H 3 S lead to significant hydrosilylation-induced changes in the gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of an Si NC at the ground state. The quantum confinement effect is dominant for all of the alkene-hydrosilylated Si NCs at the ground state. At the excited state, the prevailing effect of surface chemistry only occurs at the smallest (0.8 nm) Si NCs hydrosilylated with alkenes containing —NH 2 and —C 4 H 3 S. Although the alkyne hydrosilylation gives rise to a more significant surface chemistry effect than alkene hydrosilylation, the quantum confinement effect remains dominant for alkyne-hydrosilylated Si NCs at the ground state. However, at the excited state, the effect of surface chemistry induced by the hydrosilylation with conjugated alkynes is strong enough to prevail over that of quantum confinement. (condensed matter: structural, mechanical, and thermal properties)

  3. Wet chemical synthesis of quantum confined nanostructured tin oxide thin films by successive ionic layer adsorption and reaction technique

    Energy Technology Data Exchange (ETDEWEB)

    Murali, K.V., E-mail: kvmuralikv@gmail.com [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Ragina, A.J. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Preetha, K.C. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Sree Narayana College, Kannur, Kerala 670007 (India); Deepa, K.; Remadevi, T.L. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Pazhassi Raja N.S.S. College, Mattannur, Kerala 670702 (India)

    2013-09-01

    Graphical abstract: - Highlights: • Quantum confined SnO{sub 2} thin films were synthesized at 80 °C by SILAR technique. • Film formation mechanism is discussed. • Films with snow like crystallite morphology offer high specific surface area. • The blue-shifted value of band gap confirmed the quantum confinement effect. • Present synthesis has advantages – low cost, low temperature and green friendly. - Abstract: Quantum confined nanostructured SnO{sub 2} thin films were synthesized at 353 K using ammonium chloride (NH{sub 4}Cl) and other chemicals by successive ionic layer adsorption and reaction technique. Film formation mechanism is discussed. Structural, morphological, optical and electrical properties were investigated and compared with the as-grown and annealed films fabricated without NH{sub 4}Cl solution. SnO{sub 2} films were polycrystalline with crystallites of tetragonal structure with grain sizes lie in the 5–8 nm range. Films with snow like crystallite morphology offer high specific surface area. The blue-shifted value of band gap of as-grown films confirmed the quantum confinement effect of grains. Refractive index of the films lies in the 2.1–2.3 range. Films prepared with NH{sub 4}Cl exhibit relatively lower resistivity of the order of 10{sup 0}–10{sup −1} Ω cm. The present synthesis has advantages such as low cost, low temperature and green friendly, which yields small particle size, large surface–volume ratio, and high crystallinity SnO{sub 2} films.

  4. A study of the ac Stark effect in doped photonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Haque, I; Singh, Mahi R [Department of Physics and Astronomy, University of Western Ontario, London, ON, N6A 3K7 (Canada)

    2007-04-16

    In this paper we present calculations of level populations and susceptibility for an ensemble of five-level atoms doped in a photonic crystal, using the master equation method. The atoms in the ensemble interact with the crystal which acts as a reservoir and are coupled with two strong pump fields and a weak probe field. It is found that, by manipulating the resonance energy associated with one of the decay channels of the atom, the system can be switched between an inverted and a non-inverted state. We have also observed the ac Stark effect in these atoms and have shown that due to the role played by the band structure of the photonic crystal, it is possible to switch between an absorption state and a non-absorption state of the atomic system. This is a very important finding as techniques of rendering material systems transparent to resonant laser radiation are very desirable in the fabrication of novel optical and photonic devices.

  5. Design of a New Optical System for Alcator C-Mod Motional Stark Effect Diagnostic

    International Nuclear Information System (INIS)

    Ko, Jinseok; Scott, Steve; Bitter, Manfred; Lerner, Scott

    2009-01-01

    The motional Stark effect (MSE) diagnostic on Alcator C-Mod uses an in-vessel optical system (five lenses and three mirrors) to relay polarized light to an external polarimeter because port access limitations on Alcator C-Mod preclude a direct view of the diagnostic beam. The system experiences unacceptable, spurious drifts of order several degrees in measured pitch angle over the course of a run day. Recent experiments illuminated the MSE diagnostic with polarized light of fixed orientation as heat was applied to various optical elements. A large change in measured angle was observed as two particular lenses were heated, indicating that thermal-stress-induced birefringence is a likely cause of the spurious variability. Several new optical designs have been evaluated to eliminate the affected in-vessel lenses and to replace the focusing they provide with curved mirrors; however, ray tracing calculations imply that this method is not feasible. A new approach is under consideration that utilizes in situ calibrations with in-vessel reference polarized light sources. 2008 American Institute of Physics.

  6. Simultaneous influence of Stark effect and excessive line broadening on the Hα line

    Science.gov (United States)

    Cvetanović, Nikola; Ivković, Saša S.; Obradović, Bratislav M.; Kuraica, Milorad M.

    2017-12-01

    The aim of this paper is to study the combined influence of the Stark effect and the excessive Doppler broadening on the Balmer alpha line in hydrogen discharges. Since this line is a good candidate for measuring electric field in various types of discharges with different gas compositions, a simple method for field measurement based on polarization spectroscopy is developed, that includes all the excitation mechanisms. To simultaneously test the flexibility of the fitting procedure and investigate the excessive broadening, we applied the fitting procedure on line profiles obtained at a range of conditions from two different discharges. The range of pressures and voltages was examined in an abnormal glow and in dielectric barrier discharge operating with hydrogen gas. The model fitting function was able to respond and follow the change in the line profile caused by the change of conditions. This procedure can therefore be recommended for electric field measurement. Contribution to the "Topical Issue: Physics of Ionized Gases (SPIG 2016)", edited by Goran Poparic, Bratislav Obradovic, Dragana Maric and Aleksandar Milosavljevic.

  7. Quantum confinement-induced tunable exciton states in graphene oxide.

    Science.gov (United States)

    Lee, Dongwook; Seo, Jiwon; Zhu, Xi; Lee, Jiyoul; Shin, Hyeon-Jin; Cole, Jacqueline M; Shin, Taeho; Lee, Jaichan; Lee, Hangil; Su, Haibin

    2013-01-01

    Graphene oxide has recently been considered to be a potential replacement for cadmium-based quantum dots due to its expected high fluorescence. Although previously reported, the origin of the luminescence in graphene oxide is still controversial. Here, we report the presence of core/valence excitons in graphene-based materials, a basic ingredient for optical devices, induced by quantum confinement. Electron confinement in the unreacted graphitic regions of graphene oxide was probed by high resolution X-ray absorption near edge structure spectroscopy and first-principles calculations. Using experiments and simulations, we were able to tune the core/valence exciton energy by manipulating the size of graphitic regions through the degree of oxidation. The binding energy of an exciton in highly oxidized graphene oxide is similar to that in organic electroluminescent materials. These results open the possibility of graphene oxide-based optoelectronic device technology.

  8. Deflection of atomic beams with isotope separation by optical resonance radiation using stimulated emission and the ac stark effect

    International Nuclear Information System (INIS)

    Bjorkholm, J.E.; Liao, P.F.H.

    1977-01-01

    Improved atomic beam deflection and improved isotope separation, even in vapors, is proposed by substituting the A.C. Stark effect for the baseband chirp of the pushing beam in the prior proposal by I. Nebenzahl et al., Applied Physics Letters, Vol. 25, page 327 (September 1974). The efficiency inherent in re-using the photons as in the Nebenzahl et al proposal is retained; but the external frequency chirpers are avoided. The entire process is performed by two pulses of monochromatic coherent light, thereby avoiding the complication of amplifying frequency-modulated light pulses. The A.C. Stark effect is provided by the second beam of coherent monochromatic light, which is sufficiently intense to chirp the energy levels of the atoms or isotopes of the atomic beam or vapor. Although, in general, the A.C. Stark effect will alter the isotope shift somewhat, it is not eliminated. In fact, the appropriate choice of frequencies of the pushing and chirping beams may even relax the requirements with respect to the isotope absorption line shift for effective separation. That is, it may make the isotope absorption lines more easily resolvable

  9. Electronic states in crystals of finite size quantum confinement of bloch waves

    CERN Document Server

    Ren, Shang Yuan

    2017-01-01

    This book presents an analytical theory of the electronic states in ideal low dimensional systems and finite crystals based on a differential equation theory approach. It provides precise and fundamental understandings on the electronic states in ideal low-dimensional systems and finite crystals, and offers new insights into some of the basic problems in low-dimensional systems, such as the surface states and quantum confinement effects, etc., some of which are quite different from what is traditionally believed in the solid state physics community. Many previous predictions have been confirmed in subsequent investigations by other authors on various relevant problems. In this new edition, the theory is further extended to one-dimensional photonic crystals and phononic crystals, and a general theoretical formalism for investigating the existence and properties of surface states/modes in semi-infinite one-dimensional crystals is developed. In addition, there are various revisions and improvements, including us...

  10. Effect of Electrical Field on Colloidal CdSe/ZnS Quantum Dots

    International Nuclear Information System (INIS)

    Zhi-Bing, Wang; Jia-Yu, Zhang; Yi-Ping, Cui; Yong-Hong, Ye

    2008-01-01

    We fabricate the hybrid films of colloidal CdSe/ZnS quantum dots (QDs) and poly(9-vinylcarbazole) (PVK) sandwiched between two electrodes. The voltage and temperature dependences of the electroluminescence (EL) are measured. The quantum-confined Stark effect of colloidal QDs is clearly observed. To explore the mechanism in the QD EL, hybrid films are fabricated with different concentrations of colloidal QDs. Electrons and holes are proposed to be separately transported in QDs and PVK, respectively

  11. Crystal habit dependent quantum confined photoluminescence of zinc oxide nanostructures

    International Nuclear Information System (INIS)

    Arellano, Ian Harvey J.; Payawan, Leon Jr. M.; Sarmago, Roland V.

    2008-01-01

    Diverse zinc oxide crystal habits namely wire, rods, tubes, whiskers and tetrapods were synthesized via hydrothermal and carbothermal reduction routes. A vapor current induced regionalization in the carbothermal synthesis lead to the isolation of these crystal habits for characterization. The surface morphology of the nanostructures was analyzed via field emission scanning electron microscopy (FESEM). The morphology and crystallinity of the as-synthesized nanostructure architectural motifs were related to their photoluminescence (PL). The photoluminescence at 157 nm was taken using F2 excimer laser and a crystal habit dependent response was observed. X-ray diffraction (XRD) analyses were conducted to deduce the degree of crystallinity showing results consistent with the excitonic emission at the band edge and visible emission at the electron-hole recombination sites. The presence of minimal crystal defects which gave the green emission was supported by energy dispersive spectroscopy (EDS) data. Transmission spectroscopy for the tetrapods exhibited an interesting PL reduction associated with high-energy deep traps in the nanostructures. Furthermore, some intensity dependent characteristics were deduced indicating quantum confined properties of these nano structures. (author)

  12. Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing

    International Nuclear Information System (INIS)

    Davis, J A; Dao, L V; Wen, X; Ticknor, C; Hannaford, P; Coleman, V A; Tan, H H; Jagadish, C; Koike, K; Sasa, S; Inoue, M; Yano, M

    2008-01-01

    Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron-hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength

  13. Stark effect of the hyperfine structure of ICl in its rovibronic ground state: Towards further molecular cooling

    Science.gov (United States)

    Qing-Hui, Wang; Xu-Ping, Shao; Xiao-Hua, Yang

    2016-01-01

    Hyperfine structures of ICl in its vibronic ground state due to the nuclear spin and electric quadruple interactions are determined by diagonalizing the effective Hamiltonian matrix. Furthermore, the Stark sub-levels are precisely determined as well. The results are helpful for electro-static manipulation (trapping or further cooling) of cold ICl molecules. For example, an electric field of 1000 V/cm can trap ICl molecules less than 637 μK in the lowest hyperfine level. Project supported by the National Natural Science Foundation of China (Grant No. 11034002), the National Basic Research Program of China (Grant No. 2011CB921602), and Qing Lan Project, China.

  14. Measurement of the poloidal magnetic field in the PBX-M tokamak using the motional Stark effect

    International Nuclear Information System (INIS)

    Levinton, F.M.; Fonck, R.J.; Gammel, G.M.; Kaita, R.; Kugel, H.W.; Powell, E.T.; Roberts, D.W.

    1989-05-01

    Polarimetry measurements of the Doppler-shifted H/sub α/ emission from a hydrogen neutral beam on the PBX-M tokamak have been employed in a novel technique for obtaining q(0) and poloidal magnetic field profiles. The electric field from the beam particle motion across the magnetic field (E = V/sub beam/ /times/ B) causes a wavelength splitting of several angstroms, and polarization of the emitted radiation (Stark effect). Viewed transverse to the fields, the emission is linearly polarized with the angle of polarization related to the direction of the magnetic field. 14 refs., 5 figs

  15. Effect of holding period prior to storage on the chemical attributes of Starking Delicious apples during refrigerated storage

    Directory of Open Access Journals (Sweden)

    Aynur Batkan

    2012-06-01

    Full Text Available In this research, the effects of three different holding periods (6, 12 and 24 hours prior to storage on the quality attributes of Starking Delicious apples were investigated during storage of 8 months at 0.5 ± 1.0 ºC. Changes in weight loss, flesh firmness, pH values, soluble dry matter amount, titratable acidity values, ascorbic acid contents, and total and reducing sugar content were determined. According to the results, the holding period showed statistically significant changes in the quality attributes of the apples (p < 0.05.

  16. Direct measurements of safety factor profiles with motional Stark effect for KSTAR tokamak discharges with internal transport barriers

    Science.gov (United States)

    Ko, J.; Chung, J.

    2017-06-01

    The safety factor profile evolutions have been measured from the plasma discharges with the external current drive mechanism such as the multi-ion-source neutral beam injection for the Korea Superconducting Tokamak Advanced Research (KSTAR) for the first time. This measurement has been possible by the newly installed motional Stark effect (MSE) diagnostic system that utilizes the polarized Balmer-alpha emission from the energetic neutral deuterium atoms induced by the Stark effect under the Lorentz electric field. The 25-channel KSTAR MSE diagnostic is based on the conventional photoelastic modulator approach with the spatial and temporal resolutions less than 2 cm (for the most of the channels except 2 to 3 channels inside the magnetic axis) and about 10 ms, respectively. The strong Faraday rotation imposed on the optical elements in the diagnostic system is calibrated out from a separate and well-designed polarization measurement procedure using an in-vessel reference polarizer during the toroidal-field ramp-up phase before the plasma experiment starts. The combination of the non-inductive current drive during the ramp-up and shape control enables the formation of the internal transport barrier where the pitch angle profiles indicate flat or slightly hollow profiles in the safety factor.

  17. Stark resonances in disordered systems

    International Nuclear Information System (INIS)

    Grecchi, V.; Maioli, M.; Modena Univ.; Sacchetti, A.

    1992-01-01

    By slightly restricting the conditions given by Herbst and Howland, we prove the existence of resonances in the Stark effect of disordered systems (and atomic crystals) for large atomic mean distance. In the crystal case the ladders of resonances have the Wannier behavior for small complex field. (orig.)

  18. Theoretical investigation of stark effect on shallow donor binding energy in InGaN spherical QD-QW

    Energy Technology Data Exchange (ETDEWEB)

    El Ghazi, Haddou, E-mail: hadghazi@gmail.com [Solid State Physics Laboratory, Faculty of Science, Dhar EL Mehrez, BP 1796 Fes-Atlas (Morocco); Mathématiques spéciales, CPGE Kénitra, Chakib Arsalane Street (Morocco); Jorio, Anouar; Zorkani, Izeddine [Solid State Physics Laboratory, Faculty of Science, Dhar EL Mehrez, BP 1796 Fes-Atlas (Morocco)

    2013-08-01

    In this paper, a simultaneous study of electric field and impurity's position effects on the ground-state shallow-donor binding energy in GaN|InGaN|GaN spherical quantum dot-quantum well (SQD-QW) as a function of the ratio of the inner and the outer radius is reported. The calculations are investigated using variational approach within the framework of the effective-mass approximation. The numerical results show that: (i) the binding energy is strongly affected by the external electric field and the SQD-QW dimension, (ii) a critical value of spherical system's radius is obtained constituting the limit of three dimension confinement and spherical thin layer confinement and (iii) the Stark shift increases with increasing electric field and it is more pronounced around the position of the impurity corresponding to the binding energy maxima than in the spherical layer extremities.

  19. Theoretical investigation of stark effect on shallow donor binding energy in InGaN spherical QD-QW

    International Nuclear Information System (INIS)

    El Ghazi, Haddou; Jorio, Anouar; Zorkani, Izeddine

    2013-01-01

    In this paper, a simultaneous study of electric field and impurity's position effects on the ground-state shallow-donor binding energy in GaN|InGaN|GaN spherical quantum dot-quantum well (SQD-QW) as a function of the ratio of the inner and the outer radius is reported. The calculations are investigated using variational approach within the framework of the effective-mass approximation. The numerical results show that: (i) the binding energy is strongly affected by the external electric field and the SQD-QW dimension, (ii) a critical value of spherical system's radius is obtained constituting the limit of three dimension confinement and spherical thin layer confinement and (iii) the Stark shift increases with increasing electric field and it is more pronounced around the position of the impurity corresponding to the binding energy maxima than in the spherical layer extremities

  20. Quantum confinement and heavy surface states of Dirac fermions in bismuth (111) films: An analytical approach

    Science.gov (United States)

    Enaldiev, V. V.; Volkov, V. A.

    2018-03-01

    Recent high-resolution angle-resolved photoemission spectroscopy experiments have given a reason to believe that pure bismuth is a topologically nontrivial semimetal. We derive an analytic theory of surface and size-quantized states of Dirac fermions in Bi(111) films taking into account the new data. The theory relies on a new phenomenological momentum-dependent boundary condition for the effective Dirac equation. The boundary condition is described by two real parameters that are expressed by a linear combination of the Dresselhaus and Rashba interface spin-orbit interaction parameters. In semi-infinite Bi(111), near the M ¯ point the surface states possess anisotropical parabolic dispersion with very heavy effective mass in the Γ ¯-M ¯ direction order of ten free electron masses and light effective mass in the M ¯-K ¯ direction order of one hundredth of free electron mass. In Bi(111) films with equivalent surfaces, the surface states from top and bottom surfaces are not split. In such a symmetric film with arbitrary thickness, the bottom of the lowest quantum confinement subband in the conduction band coincides with the bottom of the bulk conduction band in the M ¯ point.

  1. Measurements with magnetic field in the National Spherical Torus Experiment using the motional Stark effect with laser induced fluorescence diagnostic

    Energy Technology Data Exchange (ETDEWEB)

    Foley, E. L.; Levinton, F. M. [Nova Photonics, Inc., Princeton, New Jersey 08540 (United States)

    2013-04-15

    The motional Stark effect with laser-induced fluorescence diagnostic (MSE-LIF) has been installed and tested on the National Spherical Torus Experiment (NSTX) at the Princeton Plasma Physics Lab. The MSE-LIF diagnostic will be capable of measuring radially resolved profiles of magnetic field magnitude or pitch angle in NSTX plasmas. The system includes a diagnostic neutral hydrogen beam and a laser which excites the n = 2 to n = 3 transition. A viewing system has been implemented which will support up to 38 channels from the plasma edge to past the magnetic axis. First measurements of MSE-LIF signals in the presence of small applied magnetic fields in neutral gas are reported.

  2. Measurements with magnetic field in the National Spherical Torus Experiment using the motional Stark effect with laser induced fluorescence diagnostic

    Science.gov (United States)

    Foley, E. L.; Levinton, F. M.

    2013-04-01

    The motional Stark effect with laser-induced fluorescence diagnostic (MSE-LIF) has been installed and tested on the National Spherical Torus Experiment (NSTX) at the Princeton Plasma Physics Lab. The MSE-LIF diagnostic will be capable of measuring radially resolved profiles of magnetic field magnitude or pitch angle in NSTX plasmas. The system includes a diagnostic neutral hydrogen beam and a laser which excites the n = 2 to n = 3 transition. A viewing system has been implemented which will support up to 38 channels from the plasma edge to past the magnetic axis. First measurements of MSE-LIF signals in the presence of small applied magnetic fields in neutral gas are reported.

  3. Overview of equilibrium reconstruction on DIII-D using new measurements from an expanded motional Stark effect diagnostic

    International Nuclear Information System (INIS)

    Holcomb, C; Makowski, M; Allen, S; Meyer, W; Van Zeeland, M

    2008-01-01

    Motional Stark effect (MSE) measurements constrain equilibrium reconstruction of DIII-D tokamak plasmas using the equilibrium code EFIT. In 2007, two new MSE arrays were brought online, bringing the system to three core arrays, two edge arrays, and 64 total channels. We present the first EFIT reconstructions using this expanded system. Safety factor and E R profiles produced by fitting to data from the two new arrays and one of the other three agree well with independent measurements. Comparison of the data from the three arrays that view the core shows that one of the older arrays is inconsistent with the other two unless the measured calibration factors for this array are adjusted. The required adjustments depend on toroidal field and plasma current direction, and on still other uncertain factors that change as the plasma evolves. We discuss possible sources of calibration error for this array

  4. Spectroscopy and dynamics of charge transfer excitons in type-II band aligned quantum confined heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kushavah, Dushyant [Centre for Research in Nanotechnology and Science, IIT Bombay-400076, Mumbai (India); Mohapatra, P. K.; Vasa, P.; Singh, B. P., E-mail: bhanups@iitb.ac.in [Department of physics, IIT Bombay, Mumbai-400076 (India); Rustagi, K. C. [Indian Institute of Science Education and Research Bhopal-462066, Bhopal (India); Bahadur, D. [Department of Metallurgical Engineering and Materials Science, IIT Bombay, Mumbai-400076 (India)

    2015-05-15

    We illustrate effect of charge transfer (CT) in type-II quantum confined heterostructure by comparing CdSe quantum dots (QDs), CdSe/CdTe heterostructure quantum dots (HQDs) and CdSe/CdTe/CdSe quantum well-quantum dots (QWQDs) heterostructures. CdSe core QDs were synthesized using a kinetic growth method where QD size depends on reaction time. For shell coating we used modified version of successive ionic layer adsorption and reaction (SILAR). Size of different QDs ∼5 to 7 nm were measured by transmission electron microscopy (TEM). Strong red shift from ∼597 to ∼746 nm in photoluminescence (PL) spectra from QDs to QWQDs shows high tunability which is not possible with single constituent semiconductor QDs. PL spectra have been recorded at different temperatures (10K-300K). Room temperature time correlated single photon counting (TCSPC) measurements for QDs to QWQDs show three exponential radiative decay. The slowest component decay constant in QWQDs comes around eight fold to ∼51 ns as compared to ∼6.5 ns in HQD suggesting new opportunities to tailor the radiative carrier recombination rate of CT excitons.

  5. Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

    NARCIS (Netherlands)

    Rahman, R.; Verduijn, J.; Kharche, N.; Lansbergen, G.P.; Klimeck, G.; Hollenberg, L.C.L.; Rogge, S.

    2011-01-01

    An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the conduction band present in silicon. Understanding

  6. Stark effect-dependent of ground-state donor binding energy in InGaN/GaN parabolic QWW

    International Nuclear Information System (INIS)

    El Ghazi, Haddou; Zorkani, Izeddine; Jorio, Anouar

    2013-01-01

    Using the finite-difference method within the quasi-one-dimensional effective potential model and effective mass approximation, the ground-state binding energy of hydrogenic shallow-donor impurity in wurtzite (WZ) (In,Ga)N/GaN parabolic transversal-section quantum-well wires (PQWWs) subjected to external electric field is investigated. An effective radius of a cylindrical QWW describing the strength of the lateral confinement is introduced. The results show that (i) the position of the largest electron probability density in x–y plane is located at a point and it is pushed along the negative sense by the electric field directed along the positive sense, (ii) the ground-state binding energy is largest for the impurity located at this point and starts to decrease when the impurity is away from this point, (iii) the ground-state binding energy decreases with increase in the external electric field and effective radius, and (iv) the Stark-shift increases with the increase of the external electric field and the effective radius

  7. A motional Stark effect diagnostic analysis routine for improved resolution of iota in the core of the large helical device.

    Science.gov (United States)

    Dobbins, T J; Ida, K; Suzuki, C; Yoshinuma, M; Kobayashi, T; Suzuki, Y; Yoshida, M

    2017-09-01

    A new Motional Stark Effect (MSE) analysis routine has been developed for improved spatial resolution in the core of the Large Helical Device (LHD). The routine was developed to reduce the dependency of the analysis on the Pfirsch-Schlüter (PS) current in the core. The technique used the change in the polarization angle as a function of flux in order to find the value of diota/dflux at each measurement location. By integrating inwards from the edge, the iota profile can be recovered from this method. This reduces the results' dependency on the PS current because the effect of the PS current on the MSE measurement is almost constant as a function of flux in the core; therefore, the uncertainty in the PS current has a minimal effect on the calculation of the iota profile. In addition, the VMEC database was remapped from flux into r/a space by interpolating in mode space in order to improve the database core resolution. These changes resulted in a much smoother iota profile, conforming more to the physics expectations of standard discharge scenarios in the core of the LHD.

  8. Electric Fields near RF Heating and Current Drive Antennas in Tore Supra Measured with Dynamic Stark Effect Spectroscopy*

    Science.gov (United States)

    Klepper, C. C.; Martin, E. H.; Isler, R. C.; Colas, L.; Hillairet, J.; Marandet, Y.; Lotte, Ph.; Colledani, G.; Martin, V.; Hillis, D. L.; Harris, J. H.; Saoutic, B.

    2011-10-01

    Computational models of the interaction between RF waves and the scrape-off layer plasma near ion cyclotron resonant heating (ICRH) and lower hybrid current drive launch antennas are continuously improving. These models mainly predict the RF electric fields produced in the SOL and, therefore, the best measurement for verification of these models would be a direct measurement of these electric fields. Both types of launch antennas are used on Tore Supra and are designed for high power (up to 4MW/antenna) and long pulse (> > 25s) operation. Direct, non-intrusive measurement of the RF electric fields in the vicinity of these structures is achieved by fitting spectral profiles of deuterium Balmer-alpha and Balmer-beta to a model that includes the dynamic, external-field Stark effect, as well as Zeeman splitting and Doppler broadening mechanisms. The measurements are compared to the mentioned, near-field region, RF antenna models. *Work supported in part by the US DOE under Contract No. DE-AC05-00OR22725 with UT-Battelle, LLC.

  9. Observation of the Stark effect in υ+ = 0 Rydberg states of NO: a comparison between predissociating and bound states

    International Nuclear Information System (INIS)

    Jones, N J A; Minns, R S; Patel, R; Fielding, H H

    2008-01-01

    The Stark spectra of Rydberg states of NO below the υ + = 0 ionization limit, with principal quantum numbers n = 25-30, have been investigated in the presence of dc electric fields in the range 0-150 V cm -1 . The Stark states were accessed by two-colour, double-resonance excitation via the υ' = 0, N' = 0 rovibrational state of the A 2 Σ + state. The N( 2 D) atoms produced by predissociation were measured by (2 + 1) resonance-enhanced multiphoton ionization, and compared with pulsed-field ionization spectra of the bound Rydberg state population (Patel et al 2007 J. Phys. B: At. Mol. Opt. Phys. 40 1369)

  10. The effects of ultrasonic pretreatment and structural changes during the osmotic dehydration of the 'Starking' apple (Malus domestica Borkh)

    Energy Technology Data Exchange (ETDEWEB)

    Rosa-Mendoza, M. E.; Fernandez-Munoz, J. L.; Arjona-Roman, J. L.

    2012-11-01

    During the osmotic dehydration (OD) of fruit, the cell membrane displays a high resistance to mass transfer, thereby reducing the dehydration rate. To reduce thermal damage to cell membranes, alternative methods have recently been introduced to reduce the initial moisture content and/or modify the structure of fruit tissue. The aim of this work was to evaluate the effects of an ultrasound (US) pretreatment for OD on the effective diffusion coefficients and to observe the changes in the molecular structure of 'Starking' apple cubes by Fourier-transform infrared spectroscopy (FTIR) during a 3 h process using a 45 dregee Bx sucrose solution at 60 degree centigrade. In the pretreatment step, apple samples were immersed in an ultrasonic bath at 45 kHz for 20 min. The effective diffusion coefficients for water (Dew) and solids (Des) were calculated from the observed osmotic kinetics according to Fick's second law for the transient state. The solids coefficients were higher than the water coefficients in both processes due to the concentration difference (De = 7.7 × 10{sup -}9 and 9.7 × 10{sup -}9 m{sup 2} s{sup -}1 for ODUS). The structural changes were determined by FTIR by measuring the molecular vibration frequency for sucrose. The 1,500-900 cm{sup -}1 region of the infrared spectra was used to monitor the effect of sucrose concentration on fruit structure. We observed that the first bonds formed were C-H and C-O-C stretching (at 920 and 1,129 cm{sup -}1, respectively) in the sucrose skeleton and glycoside bonds among sucrose molecules. The water concentration affected the diffusion coefficient significantly due to its dependence on the physical structure of the food. (Author) 27 refs.

  11. Influence of the dynamic Stark effect on long-term frequency stability of a self-oscillating magnetometer with laser-pumped alkali atoms

    Science.gov (United States)

    Baranov, A. A.; Ermak, S. V.; Kulachenkov, N. K.; Petrenko, M. V.; Sagitov, E. A.; Semenov, V. V.

    2017-11-01

    This paper presents the results of investigation Stark shift effect influence on the long-term stability of a dual scheme of quantum magnetometers. Such scheme allows suppressing Stark shift components when a certain pumping light polarization is applied. As a result, long-term stability of a quantum sensor increases. However, when low-frequency (LF) and microwave fields are attached to a single vapor cell a coherence circulation in hyperfine structure of alkali atoms takes place. Physical origin of this effect is associated with the so called “dressed” atom theory, when atom is “dressed” by LF field. It yields in multiphoton absorption and resonance frequency shift. First estimates for this shift based on density matrix evolution formalism are provided in the paper.

  12. From Pauli's birthday to 'Confinement Resonances' – a potted history of Quantum Confinement

    International Nuclear Information System (INIS)

    Connerade, J P

    2013-01-01

    Quantum Confinement is in some sense a new subject. International meetings dedicated to Quantum Confinement have occurred only recently in Mexico City (the first in 2010 and the second, in September 2011). However, at least in principle, the subject has existed since a very long time. Surprisingly perhaps, it lay dormant for many years, for want of suitable experimental examples. However, when one looks carefully at its origin, it turns out to have a long and distinguished history. In fact, the problem of quantum confinement raises a number of very interesting issues concerning boundary conditions in elementary quantum mechanics and how they should be applied to real problems. Some of these issues were missed in the earliest papers, but are implicit in the structure of quantum mechanics, and lead to the notion of Confinement Resonances, the existence of which was predicted theoretically more than ten years ago. Although, for several reasons, these resonances remained elusive for a very long time, they have now been observed experimentally, which puts the whole subject in much better shape and, together with the advent of metallofullerenes, has contributed to its revival.

  13. Observation of Quantum Confinement in Monodisperse Methylammonium Lead Halide Perovskite Nanocrystals Embedded in Mesoporous Silica.

    Science.gov (United States)

    Malgras, Victor; Tominaka, Satoshi; Ryan, James W; Henzie, Joel; Takei, Toshiaki; Ohara, Koji; Yamauchi, Yusuke

    2016-10-13

    Hybrid organic-inorganic metal halide perovskites have fascinating electronic properties and have already been implemented in various devices. Although the behavior of bulk metal halide perovskites has been widely studied, the properties of perovskite nanocrystals are less well-understood because synthesizing them is still very challenging, in part because of stability. Here we demonstrate a simple and versatile method to grow monodisperse CH 3 NH 3 PbBr x I x-3 perovskite nanocrystals inside mesoporous silica templates. The size of the nanocrystal is governed by the pore size of the templates (3.3, 3.7, 4.2, 6.2, and 7.1 nm). In-depth structural analysis shows that the nanocrystals maintain the perovskite crystal structure, but it is slightly distorted. Quantum confinement was observed by tuning the size of the particles via the template. This approach provides an additional route to tune the optical bandgap of the nanocrystal. The level of quantum confinement was modeled taking into account the dimensions of the rod-shaped nanocrystals and their close packing inside the channels of the template. Photoluminescence measurements on CH 3 NH 3 PbBr clearly show a shift from green to blue as the pore size is decreased. Synthesizing perovskite nanostructures in templates improves their stability and enables tunable electronic properties via quantum confinement. These structures may be useful as reference materials for comparison with other perovskites, or as functional materials in all solid-state light-emitting diodes.

  14. Anisotropic spin–orbit stark effect in cubic semiconductors without an inversion center

    International Nuclear Information System (INIS)

    Alekseev, P. S.

    2015-01-01

    The effect of external electric and magnetic fields on shallow donor levels in a semiconductor of the T d crystallographic class is analyzed. Application of an electric field eliminates the symmetry of the donor potential with respect to space inversion; as a result, corrections from the momentum-odd spin–orbit Dresselhaus term appear in the donor levels. In a strong electric field, such corrections determine the anisotropy of spin splitting of the donor levels relative to the directions of the external fields in the crystallographic coordinate system. Analytic expressions are derived for the spin splitting anisotropy for various relations between the magnitudes of the magnetic and electric fields. The results of this study can be used to determine the Dresselhaus spin–orbit interaction constant by a new method (in experiments on spin splitting of donor levels)

  15. Anisotropic spin–orbit stark effect in cubic semiconductors without an inversion center

    Energy Technology Data Exchange (ETDEWEB)

    Alekseev, P. S., E-mail: pavel.alekseev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2015-09-15

    The effect of external electric and magnetic fields on shallow donor levels in a semiconductor of the T{sub d} crystallographic class is analyzed. Application of an electric field eliminates the symmetry of the donor potential with respect to space inversion; as a result, corrections from the momentum-odd spin–orbit Dresselhaus term appear in the donor levels. In a strong electric field, such corrections determine the anisotropy of spin splitting of the donor levels relative to the directions of the external fields in the crystallographic coordinate system. Analytic expressions are derived for the spin splitting anisotropy for various relations between the magnitudes of the magnetic and electric fields. The results of this study can be used to determine the Dresselhaus spin–orbit interaction constant by a new method (in experiments on spin splitting of donor levels)

  16. Experimental methods in cryogenic spectroscopy: Stark effect measurements in substituted myoglobin

    Science.gov (United States)

    Moran, Bradley M.

    Dawning from well-defined tertiary structure, the active regions of enzymatic proteins exist as specifically tailored electrostatic microenvironments capable of facilitating chemical interaction. The specific influence these charge distributions have on ligand binding dynamics, and their impact on specificity, reactivity, and biological functionality, have yet to be fully understood. A quantitative determination of these intrinsic fields would offer insight towards the mechanistic aspects of protein functionality. This work seeks to investigate the internal molecular electric fields that are present at the oxygen binding site of myoglobin. Experiments are performed at 1 K on samples located within a glassy matrix, using the high-resolution technique spectral hole-burning. The internal electric field distributions can be explored by implementing a unique mathematical treatment for analyzing the effect that externally applied electric fields have on the spectral hole profiles. Precise control of the light field, the temperature, and the externally applied electric field at the site of the sample is crucial. Experimentally, the functionality of custom cryogenic temperature confocal scanning microscope was extended to allow for collection of imaging and spectral data with the ability to modulate the polarization of the light at the sample. Operation of the instrumentation was integrated into a platform allowing for seamless execution of input commands with high temporal inter-instrument resolution for collection of data streams. For the regulated control and cycling of the sample temperature. the thermal characteristics of the research Dewar were theoretically modeled to systematically predict heat flows throughout the system. A high voltage feedthrough for delivering voltages of up to 5000 V to the sample as positioned within the Dewar was developed. The burning of spectral holes with this particular experimental setup is highly repeatable. The quantum mechanical

  17. Orthogonal Electric Field Measurements near the Green Fluorescent Protein Fluorophore through Stark Effect Spectroscopy and pKa Shifts Provide a Unique Benchmark for Electrostatics Models.

    Science.gov (United States)

    Slocum, Joshua D; First, Jeremy T; Webb, Lauren J

    2017-07-20

    Measurement of the magnitude, direction, and functional importance of electric fields in biomolecules has been a long-standing experimental challenge. pK a shifts of titratable residues have been the most widely implemented measurements of the local electrostatic environment around the labile proton, and experimental data sets of pK a shifts in a variety of systems have been used to test and refine computational prediction capabilities of protein electrostatic fields. A more direct and increasingly popular technique to measure electric fields in proteins is Stark effect spectroscopy, where the change in absorption energy of a chromophore relative to a reference state is related to the change in electric field felt by the chromophore. While there are merits to both of these methods and they are both reporters of local electrostatic environment, they are fundamentally different measurements, and to our knowledge there has been no direct comparison of these two approaches in a single protein. We have recently demonstrated that green fluorescent protein (GFP) is an ideal model system for measuring changes in electric fields in a protein interior caused by amino acid mutations using both electronic and vibrational Stark effect chromophores. Here we report the changes in pK a of the GFP fluorophore in response to the same mutations and show that they are in excellent agreement with Stark effect measurements. This agreement in the results of orthogonal experiments reinforces our confidence in the experimental results of both Stark effect and pK a measurements and provides an excellent target data set to benchmark diverse protein electrostatics calculations. We used this experimental data set to test the pK a prediction ability of the adaptive Poisson-Boltzmann solver (APBS) and found that a simple continuum dielectric model of the GFP interior is insufficient to accurately capture the measured pK a and Stark effect shifts. We discuss some of the limitations of this

  18. Manipulating topological-insulator properties using quantum confinement

    International Nuclear Information System (INIS)

    Kotulla, M; Zülicke, U

    2017-01-01

    Recent discoveries have spurred the theoretical prediction and experimental realization of novel materials that have topological properties arising from band inversion. Such topological insulators are insulating in the bulk but have conductive surface or edge states. Topological materials show various unusual physical properties and are surmised to enable the creation of exotic Majorana-fermion quasiparticles. How the signatures of topological behavior evolve when the system size is reduced is interesting from both a fundamental and an application-oriented point of view, as such understanding may form the basis for tailoring systems to be in specific topological phases. This work considers the specific case of quantum-well confinement defining two-dimensional layers. Based on the effective-Hamiltonian description of bulk topological insulators, and using a harmonic-oscillator potential as an example for a softer-than-hard-wall confinement, we have studied the interplay of band inversion and size quantization. Our model system provides a useful platform for systematic study of the transition between the normal and topological phases, including the development of band inversion and the formation of massless-Dirac-fermion surface states. The effects of bare size quantization, two-dimensional-subband mixing, and electron–hole asymmetry are disentangled and their respective physical consequences elucidated. (paper)

  19. Quantum confinement of zero-dimensional hybrid organic-inorganic polaritons at room temperature

    Science.gov (United States)

    Nguyen, H. S.; Han, Z.; Abdel-Baki, K.; Lafosse, X.; Amo, A.; Lauret, J.-S.; Deleporte, E.; Bouchoule, S.; Bloch, J.

    2014-02-01

    We report on the quantum confinement of zero-dimensional polaritons in perovskite-based microcavity at room temperature. Photoluminescence of discrete polaritonic states is observed for polaritons localized in symmetric sphere-like defects which are spontaneously nucleated on the top dielectric Bragg mirror. The linewidth of these confined states is found much sharper (almost one order of magnitude) than that of photonic modes in the perovskite planar microcavity. Our results show the possibility to study organic-inorganic cavity polaritons in confined microstructure and suggest a fabrication method to realize integrated polaritonic devices operating at room temperature.

  20. Quantum confinement of zero-dimensional hybrid organic-inorganic polaritons at room temperature

    International Nuclear Information System (INIS)

    Nguyen, H. S.; Lafosse, X.; Amo, A.; Bouchoule, S.; Bloch, J.; Han, Z.; Abdel-Baki, K.; Lauret, J.-S.; Deleporte, E.

    2014-01-01

    We report on the quantum confinement of zero-dimensional polaritons in perovskite-based microcavity at room temperature. Photoluminescence of discrete polaritonic states is observed for polaritons localized in symmetric sphere-like defects which are spontaneously nucleated on the top dielectric Bragg mirror. The linewidth of these confined states is found much sharper (almost one order of magnitude) than that of photonic modes in the perovskite planar microcavity. Our results show the possibility to study organic-inorganic cavity polaritons in confined microstructure and suggest a fabrication method to realize integrated polaritonic devices operating at room temperature

  1. Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate

    International Nuclear Information System (INIS)

    Anufriev, Roman; Chauvin, Nicolas; Bru-Chevallier, Catherine; Khmissi, Hammadi; Naji, Khalid; Gendry, Michel; Patriarche, Gilles

    2014-01-01

    We report on the evidence of a strain-induced piezoelectric field in wurtzite InAs/InP quantum rod nanowires. This electric field, caused by the lattice mismatch between InAs and InP, results in the quantum confined Stark effect and, as a consequence, affects the optical properties of the nanowire heterostructure. It is shown that the piezoelectric field can be screened by photogenerated carriers or removed by increasing temperature. Moreover, a dependence of the piezoelectric field on the quantum rod diameter is observed in agreement with simulations of wurtzite InAs/InP quantum rod nanowire heterostructures

  2. Stark resonances: asymptotics and distributional Borel sum

    International Nuclear Information System (INIS)

    Caliceti, E.; Grecchi, V.; Maioli, M.

    1993-01-01

    We prove that the Stark effect perturbation theory of a class of bound states uniquely determines the position and the width of the resonances by Distributional Borel Sum. In particular the small field asymptotics of the width is uniquely related to the large order asymptotics of the perturbation coefficients. Similar results apply to all the ''resonances'' of the anharmonic and double well oscillators. (orig.)

  3. New Aspects of Field Entropy Squeezing as an Indicator for Mixed State Entanglement in an Effective Two-Level System with Stark Shift

    Institute of Scientific and Technical Information of China (English)

    S.Abdel-Khalek; M.M.A.Ahmed; A-S F.Obada

    2011-01-01

    We present an effective two-level system in interaction through two-photon processes with a single mode quantized electromagnetic field,initially prepared in a coherent state.Field entropy squeezing as an indicator of the entanglement in a mixed state system is suggested.The temporal evolution of the negativity,Wehrl entropy,Wehrl phase distribution and field entropy squeezing are investigated.The results highlight the important roles played by both the Stark shift parameters and the mixed state setting in the dynamics of the Wehrl entropy,Wehrl phase distribution and field entropy squeezing.%We present an effective two-level system in interaction through two-photon processes with a single mode quantized electromagnetic Reid, initially prepared in a coherent state. Field entropy squeezing as an indicator of the entanglement in a mixed state system is suggested. The temporal evolution of the negativity, Wehrl entropy, Wehrl phase distribution and field entropy squeezing are investigated. The results highlight the important roles played by both the Stark shift parameters and the mixed state setting in the dynamics of the Wehrl entropy, Wehrl phase distribution and field entropy squeezing.

  4. Wannier–Stark electro-optical effect, quasi-guided and photonic modes in 2D macroporous silicon structures with SiO_2 coatings

    International Nuclear Information System (INIS)

    Karachevtseva, L.; Goltviansky, Yu.; Sapelnikova, O.; Lytvynenko, O.; Stronska, O.; Bo, Wang; Kartel, M.

    2016-01-01

    Highlights: • The IR absorption spectra of oxidized macroporous silicon were studied. • The Wannier–Stark electro-optical effect on Si-SiO_2 boundary was confirmed. • An additional electric field of quasi-guided optical modes was evaluated. • The photonic modes and band gaps were measured as peculiarities in absorption spectra. - Abstract: Opportunities to enhance the properties of structured surfaces were demonstrated on 2D macroporous silicon structures with SiO_2 coatings. We investigated the IR light absorption oscillations in macroporous silicon structures with SiO2 coatings 0–800 nm thick. The Wannier–Stark electro-optical effect due to strong electric field on Si-SiO_2boundary and an additional electric field of quasi-guided optical modes were taken into account. The photonic modes and band gaps were also considered as peculiarities in absorbance spectra of macroporous silicon structures with a thick SiO_2 coating. The photonic modes do not coincide with the quasi-guided modes in the silicon matrix and do not appear in absorption spectra of 2D macroporous silicon structures with surface nanocrystals.

  5. Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films

    Science.gov (United States)

    Gity, Farzan; Ansari, Lida; Lanius, Martin; Schüffelgen, Peter; Mussler, Gregor; Grützmacher, Detlev; Greer, J. C.

    2017-02-01

    Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages are achieved. As miniaturisation continues to ultra-scaled transistors with critical dimensions on the order of ten atomic lengths, the concept of doping to form junctions fails and forming heterojunctions becomes extremely difficult. Here, it is shown that it is not needed to introduce dopant atoms nor is a heterojunction required to achieve the fundamental electronic function of current rectification. Ideal diode behavior or rectification is achieved solely by manipulation of quantum confinement using approximately 2 nm thick films consisting of a single atomic element, the semimetal bismuth. Crucially for nanoelectronics, this approach enables room temperature operation.

  6. A two-step obtainment of quantum confinement in ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A C; El-Shaer, A; Suleiman, M; Bakin, A; Waag, A [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany)

    2006-10-14

    ZnO nanorod-based single quantum well heterostructures were fabricated in a two-step process. Nanorods were first grown using vapour transport. Subsequently, high-quality ZnO/Zn{sub 0.85}Mg{sub 0.15}O heterostructures were grown on the nanorods using molecular beam epitaxy. The nanorods are well aligned along the c-axis of ZnO, as indicated by a very narrow rocking curve full width at half maximum. Quantum confinement was clearly observed within the ZnO well for different well widths. The quantum wells show photoluminescence peaks with a full width at half maximum as small as 15 meV.

  7. Band-gap engineering of functional perovskites through quantum confinement and tunneling

    DEFF Research Database (Denmark)

    Castelli, Ivano Eligio; Pandey, Mohnish; Thygesen, Kristian Sommer

    2015-01-01

    An optimal band gap that allows for a high solar-to-fuel energy conversion efficiency is one of the key factors to achieve sustainability. We investigate computationally the band gaps and optical spectra of functional perovskites composed of layers of the two cubic perovskite semiconductors BaSnO3...... and BaTaO2N. Starting from an indirect gap of around 3.3 eV for BaSnO3 and a direct gap of 1.8 eV for BaTaO2N, different layerings can be used to design a direct gap of the functional perovskite between 2.3 and 1.2 eV. The variations of the band gap can be understood in terms of quantum confinement...

  8. Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures.

    Science.gov (United States)

    Hamer, Matthew J; Tóvári, Endre; Zhu, Mengjian; Thompson, Michael Dermot; Mayorov, Alexander S; Prance, Jonathan; Lee, Yongjin; Haley, Richard; Kudrynskyi, Zakhar R; Patanè, Amalia; Terry, Daniel; Kovalyuk, Zakhar D; Ensslin, Klaus; Kretinin, Andrey V; Geim, Andre K; Gorbachev, Roman Vladislavovich

    2018-05-15

    Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

  9. Controlled synthesis of quantum confined CsPbBr3 perovskite nanocrystals under ambient conditions

    Science.gov (United States)

    He, Huimei; Tang, Bing; Ma, Ying

    2018-02-01

    Room temperature recrystallization is a simple and convenient method for synthesis of all-inorganic perovskite nanomaterials with excellent luminescent properties. However, the fast crystallization usually brings the colloidal stability and uncontrollable synthesis issues in the formation of all-inorganic perovskite. In the present study, we present a new strategy to prepare the quantum confined CsPbBr3 nanocrystals with controlled morphology under ambient condition. With the assist of fatty acid-capped precursor, the crystallization and the following growth rate can be retarded. Thanks to the retarded reaction, the morphology can be varied from nanowires to nanoplates and the thickness can be controlled from 5-7 monolayers by simply adjusting the amount of octylammonium cations and oleic acid. The nanoplates exhibit a higher photoluminescence quantum yield than the nanowires possibly due to fewer defects in the nanoplates.

  10. Controlled Synthesis of Quantum Confined CsPbBr3 perovskite Nanocrystals under Ambient Condition.

    Science.gov (United States)

    He, Huimei; Tang, Bing; Ma, Ying

    2017-11-21

    Room temperature recrystallization is a simple and convenient method for synthesis of all-inorganic perovskite nanomaterials with excellent luminescent properties. However, the fast crystallization usually brings the colloidal stability and uncontrollable synthesis issues in the formation of all-inorganic perovskite. In the present study, we present a new strategy to prepare the quantum confined CsPbBr3 nanocrystals with controlled morphology under ambient condition. With the assist of fatty acid-capped precursor, the crystallization and the following growth rate can be retarded. Thanks to the retarded reaction, the morphology can be varied from nanowires to nanoplates and the thickness can be controlled from 5 to 7 monolayers by simply adjusting the amount of octylammonium cations and oleic acid. The nanoplates exhibit a higher photoluminescence quantum yield than the nanowires possibly due to fewer defects in the nanoplates. © 2017 IOP Publishing Ltd.

  11. Influence of Doppler and 'Stark' effects on the shape of the autoionization peaks in electron energy spectra produced in ion-atom collisions

    International Nuclear Information System (INIS)

    Gleizes, A.; Benoit-Cattin, P.; Bordenave-Montesquieu, A.; Merchez, H.

    1976-01-01

    A detailed study is given of the influence of the Doppler shift and broadening on the spectra of electrons ejected by autoionization in collisions between heavy particles. General formulae have been obtained which permit the validity of results already published by other authors to be discussed. These results have been applied to the spectra of electrons ejected in He + -He collisions at 15 keV. The variation of the width of the autoionization peaks against ejection angle is well explained by Doppler broadening. On the contrary, the shape of these peaks cannot be due to the Doppler effect but rather to the Stark effect which is also studied in various experimental cases; it has been verified that the latter effect disappears in collisions between neutral particles for which symmetric peaks at 15 keV are obtained. (author)

  12. Scattering theory for Stark Hamiltonians

    International Nuclear Information System (INIS)

    Jensen, Arne

    1994-01-01

    An introduction to the spectral and scattering theory for Schroedinger operators is given. An abstract short range scattering theory is developed. It is applied to perturbations of the Laplacian. Particular attention is paid to the study of Stark Hamiltonians. The main result is an explanation of the discrepancy between the classical and the quantum scattering theory for one-dimensional Stark Hamiltonians. (author). 47 refs

  13. Giant piezoresistance of p-type nano-thick silicon induced by interface electron trapping instead of 2D quantum confinement

    International Nuclear Information System (INIS)

    Yang Yongliang; Li Xinxin

    2011-01-01

    The p-type silicon giant piezoresistive coefficient is measured in top-down fabricated nano-thickness single-crystalline-silicon strain-gauge resistors with a macro-cantilever bending experiment. For relatively thicker samples, the variation of piezoresistive coefficient in terms of silicon thickness obeys the reported 2D quantum confinement effect. For ultra-thin samples, however, the variation deviates from the quantum-effect prediction but increases the value by at least one order of magnitude (compared to the conventional piezoresistance of bulk silicon) and the value can change its sign (e.g. from positive to negative). A stress-enhanced Si/SiO 2 interface electron-trapping effect model is proposed to explain the 'abnormal' giant piezoresistance that should be originated from the carrier-concentration change effect instead of the conventional equivalent mobility change effect for bulk silicon piezoresistors. An interface state modification experiment gives preliminary proof of our analysis.

  14. Morphological Control of Mesoporosity and Nanoparticles within Co3O4-CuO Electrospun Nanofibers: Quantum Confinement and Visible Light Photocatalysis Performance.

    Science.gov (United States)

    Pradhan, Amaresh C; Uyar, Tamer

    2017-10-18

    activity of composite Co 3 O 4 -CuO NFs is attributed to the formation of mesoporosity and interconnected NPs within NFs framework, quantum confinement, extended light absorption property, internal charge transfer, and effective photogenerated charge separations.

  15. Quantum confinement and dielectric profiles of colloidal nanoplatelets of halide inorganic and hybrid organic-inorganic perovskites

    Science.gov (United States)

    Sapori, Daniel; Kepenekian, Mikaël; Pedesseau, Laurent; Katan, Claudine; Even, Jacky

    2016-03-01

    Quantum confinement as well as high frequency ε∞ and static εs dielectric profiles are described for nanoplatelets of halide inorganic perovskites CsPbX3 (X = I, Br, Cl) and hybrid organic-inorganic perovskites (HOP) in two-dimensional (2D) and three-dimensional (3D) structures. 3D HOP are currently being sought for their impressive photovoltaic ability. Prior to this sudden popularity, 2D HOP materials were driving intense activity in the field of optoelectronics. Such developments have been enriched by the recent ability to synthesize colloidal nanostructures of controlled sizes of 2D and 3D HOP. This raises the need to achieve a thorough description of the electronic structure and dielectric properties of these systems. In this work, we go beyond the abrupt dielectric interface model and reach the atomic scale description. We examine the influence of the nature of the halogen and of the cation on the band structure and dielectric constants. Similarly, we survey the effect of dimensionality and shape of the perovskite. In agreement with recent experimental results, we show an increase of the band gap and a decrease of ε∞ when the size of a nanoplatelet reduces. By inspecting 2D HOP, we find that it cannot be described as a simple superposition of independent inorganic and organic layers. Finally, the dramatic impact of ionic contributions on the dielectric constant εs is analysed.Quantum confinement as well as high frequency ε∞ and static εs dielectric profiles are described for nanoplatelets of halide inorganic perovskites CsPbX3 (X = I, Br, Cl) and hybrid organic-inorganic perovskites (HOP) in two-dimensional (2D) and three-dimensional (3D) structures. 3D HOP are currently being sought for their impressive photovoltaic ability. Prior to this sudden popularity, 2D HOP materials were driving intense activity in the field of optoelectronics. Such developments have been enriched by the recent ability to synthesize colloidal nanostructures of controlled

  16. Nitride-based Quantum-Confined Structures for Ultraviolet-Visible Optical Devices on Silicon Substrates

    KAUST Repository

    Janjua, Bilal

    2017-04-01

    III–V nitride quantum-confined structures embedded in nanowires (NWs), also known as quantum-disks-in-nanowires (Qdisks-in-NWs), have recently emerged as a new class of nanoscale materials exhibiting outstanding properties for optoelectronic devices and systems. It is promising for circumventing the technology limitation of existing planar epitaxy devices, which are bounded by the lattice-, crystal-structure-, and thermal- matching conditions. This work presents significant advances in the growth of good quality GaN, InGaN and AlGaN Qdisks-in-NWs based on careful optimization of the growth parameters, coupled with a meticulous layer structure and active region design. The NWs were grown, catalyst-free, using plasma assisted molecular beam epitaxy (PAMBE) on silicon (Si) substrates. A 2-step growth scheme was developed to achieve high areal density, dislocation free and vertically aligned NWs on Ti/Si substrates. Numerical modeling of the NWs structures, using the nextnano3 software, showed reduced polarization fields, and, in the presence of Qdisks, exhibited improved quantum-confinement; thus contributing to high carrier radiative-recombination rates. As a result, based on the growth and device structure optimization, the technologically challenging orange and yellow NWs light emitting devices (LEDs) targeting the ‘green-yellow’ gap were demonstrated on scalable, foundry compatible, and low-cost Ti coated Si substrates. The NWs work was also extended to LEDs emitting in the ultraviolet (UV) range with niche applications in environmental cleaning, UV-curing, medicine, and lighting. In this work, we used a Ti (100 nm) interlayer and Qdisks to achieve good quality AlGaN based UV-A (320 - 400 nm) device. To address the issue of UV-absorbing polymer, used in the planarization process, we developed a pendeo-epitaxy technique, for achieving an ultra-thin coalescence of the top p-GaN contact layer, for a self-planarized Qdisks-in-NWs UV-B (280 – 320 nm) LED grown

  17. Highly crystalline carbon dots from fresh tomato: UV emission and quantum confinement

    Science.gov (United States)

    Liu, Weijian; Li, Chun; Sun, Xiaobo; Pan, Wei; Yu, Guifeng; Wang, Jinping

    2017-12-01

    In this article, fresh tomatoes are explored as a low-cost source to prepare high-performance carbon dots by using microwave-assisted pyrolysis. Given that amino groups might act as nucleophiles for cleaving covalent bridging ester or ether in the crosslinked macromolecules in the biomass bulk, ethylenediamine (EDA) and urea with amino groups were applied as nucleophiles to modulate the chemical composites of the carbon nanoparticles in order to tune their fluorescence emission and enhance their quantum yields. Very interestingly, the carbon dots synthesized in the presence of urea had a highly crystalline nature, a low-degree amorphous surface and were smaller than 5 nm. Moreover, the doped N contributed to the formation of a cyclic form of core that resulted in a strong electron-withdrawing ability within the conjugated C plane. Therefore, this type of carbon dot exhibited marked quantum confinement, with the maximum fluorescence peak located in the UV region. Carbon nanoparticles greater than 20 nm in size, prepared using pristine fresh tomato and in the presence of EDA, emitted surface state controlled fluorescence. Additionally, carbon nanoparticles synthesized using fresh tomato pulp in the presence of EDA and urea were explored for bioimaging of plant pathogenic fungi and the detection of vanillin.

  18. Vibrational Stark Effect of the Electric-Field Reporter 4-Mercaptobenzonitrile as a Tool for Investigating Electrostatics at Electrode/SAM/Solution Interfaces

    Directory of Open Access Journals (Sweden)

    Peter Hildebrandt

    2012-06-01

    Full Text Available 4-mercaptobenzonitrile (MBN in self-assembled monolayers (SAMs on Au and Ag electrodes was studied by surface enhanced infrared absorption and Raman spectroscopy, to correlate the nitrile stretching frequency with the local electric field exploiting the vibrational Stark effect (VSE. Using MBN SAMs in different metal/SAM interfaces, we sorted out the main factors controlling the nitrile stretching frequency, which comprise, in addition to external electric fields, the metal-MBN bond, the surface potential, and hydrogen bond interactions. On the basis of the linear relationships between the nitrile stretching and the electrode potential, an electrostatic description of the interfacial potential distribution is presented that allows for determining the electric field strengths on the SAM surface, as well as the effective potential of zero-charge of the SAM-coated metal. Comparing this latter quantity with calculated values derived from literature data, we note a very good agreement for Au/MBN but distinct deviations for Ag/MBN which may reflect either the approximations and simplifications of the model or the uncertainty in reported structural parameters for Ag/MBN. The present electrostatic model consistently explains the electric field strengths for MBN SAMs on Ag and Au as well as for thiophenol and mercaptohexanoic acid SAMs with MBN incorporated as a VSE reporter.

  19. The importance of the radial electric field (Er) on interpretation of motional Stark effect measurements of the q profile in DIII-D high performance plasmas

    International Nuclear Information System (INIS)

    Rice, B.W.; Lao, L.L.; Burrell, K.H.; Greenfield, C.M.; Lin-Liu, Y.R.

    1997-06-01

    The development of enhanced confinement regimes such as negative central magnetic shear (NCS) and VH-mode illustrates the importance of the q profile and ExB velocity shear in improving stability and confinement in tokamak plasmas. Recently, it was realized that the large values of radial electric field observed in these high performance plasmas, up to 200 kV/m in DIII-D, have an effect on the interpretation of motional Stark effect (MSE) measurements of the q profile. It has also been shown that, with additional MSE measurements, one can extract a direct measurement of E r in addition to the usual poloidal field measurement. During a recent vent on DIII-D, 19 additional MSE channels with new viewing angles were added (for a total of 35 channels) in order to descriminate between the neutral beam v b x B electric field and the plasma E r field. In this paper, the system upgrade will be described and initial measurements demonstrating simultaneous measurement of the q and E r profiles will be presented

  20. Interband Stark effects in InxGa1-xAs/InyAl1-yAs coupled step quantum wells

    International Nuclear Information System (INIS)

    Kim, J.H.; Kim, T.W.; Yoo, K.H.

    2005-01-01

    The effects of an electric field on the interband transitions in In x Ga 1-x As/In y Al 1-y As coupled step quantum wells have been investigated both experimentally and theoretically. A In x Ga 1-x As/In y Al 1-y As coupled step quantum well sample consisted of the two sets of a 50 Aa In 0.53 Ga 0.47 As shallow quantum well and a 50 Aa In 0.65 Ga 0.35 As deep step quantum well bounded by two thick In 0.52 Al 0.48 As barriers separated by a 30 Aa In 0.52 Al 0.48 As embedded potential barrier. The Stark shift of the interband transition energy in the In x Ga 1-x As/In y Al 1-y As coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the In x Ga 1-x As/In y Al 1-y As coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that In x Ga 1-x As/In y Al 1-y As coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers

  1. Rabi oscillations and rapid-passage effects in the molecular-beam CO2-laser Stark spectroscopy of CH3F

    International Nuclear Information System (INIS)

    Adam, A.G.; Gough, T.E.; Isenor, N.R.; Scoles, G.

    1985-01-01

    sub-Doppler molecular-beam laser Stark spectroscopy has been employed to produce high-contrast Rabi oscillations in the ν 3 band of CH 3 F. By varying the intensity of the cw CO 2 laser, up to five complete oscillations were observed before the phenomenon was washed out by rapid-passage effects and damping mechanisms. Besides being useful in clarifying key features of coherent ir molecular-beam spectroscopy, the observation of Rabi oscillations provides one of the most accurate means of directly measuring transition dipole moments. Analysis of the present data on three rovibrational transitions, Q(1,1) -1reverse arrow0, P(1,0) 0reverse arrow0, and R(1,1) 0reverse arrow1, has yielded a rotationless transition dipole moment of 0.21 +- 0.01 D for the ν 3 = 1reverse arrow0 vibration. This result is in agreement with values estimated from both band-intensity and absorption-coefficient data in the literature

  2. Effect of holding period prior to storage on the chemical attributes of Starking Delicious apples during refrigerated storage Efeito do período que antecede o armazenamento nos atributos químicos de maças Starking Delicious durante o armazenamento refrigerado

    Directory of Open Access Journals (Sweden)

    Aynur Batkan

    2012-06-01

    Full Text Available In this research, the effects of three different holding periods (6, 12 and 24 hours prior to storage on the quality attributes of Starking Delicious apples were investigated during storage of 8 months at 0.5 ± 1.0 ºC. Changes in weight loss, flesh firmness, pH values, soluble dry matter amount, titratable acidity values, ascorbic acid contents, and total and reducing sugar content were determined. According to the results, the holding period showed statistically significant changes in the quality attributes of the apples (p Neste trabalho, os efeitos de três diferentes tempos de espera (6, 12 e 24 horas antes do armazenamento sobre os atributos de qualidade de maçãs tipo Starking Delicious foram investigados durante o armazenamento de 8 meses a 0,5 ± 1,0 ºC. Alterações na perda de peso, firmeza da polpa, valores de pH, quantidade de matéria seca solúvel, valores de acidez titulável, teor de ácido ascórbico e teor de açúcar redutor e total das amostras foram determinadas. De acordo com os resultados da análise, o tempo de espera causou alterações estatisticamente significativas sobre as nos atributos de qualidade das maçãs (p < 0,05.

  3. The perturbation theory model of a spherical oscillator in electric field and the vibrational stark effect in polyatomic molecular species

    Science.gov (United States)

    Petreska, Irina; Ivanovski, Gjorgji; Pejov, Ljupčo

    2007-04-01

    The effect of external electrostatic fields on the spherical oscillator energy states was studied using stationary perturbation theory. Besides the spherical oscillator with ideal symmetry, also a variety of the deformed systems were considered in which the deformations may be induced by the external fields, but also by the short-range crystal lattice forces. The perturbation theory analysis was carried out using the field-dependent basis functions. Predicted spectral appearances and band splittings due to the deformations and external field influences were shown to be helpful in interpreting the experimental spectra of molecular oscillator possessing subsets of mutually orthogonal triply degenerate normal modes (such as, e.g. tetrahedral species). To verify the results of the perturbation theory treatments, as well as to provide a further illustration of the usefulness of the employed technique, a numerical HF/aug-cc-pVTZ study of the vibrational states of methane molecule in external electrostatic field was performed.

  4. Growth of group II-VI semiconductor quantum dots with strong quantum confinement and low size dispersion

    Science.gov (United States)

    Pandey, Praveen K.; Sharma, Kriti; Nagpal, Swati; Bhatnagar, P. K.; Mathur, P. C.

    2003-11-01

    CdTe quantum dots embedded in glass matrix are grown using two-step annealing method. The results for the optical transmission characterization are analysed and compared with the results obtained from CdTe quantum dots grown using conventional single-step annealing method. A theoretical model for the absorption spectra is used to quantitatively estimate the size dispersion in the two cases. In the present work, it is established that the quantum dots grown using two-step annealing method have stronger quantum confinement, reduced size dispersion and higher volume ratio as compared to the single-step annealed samples. (

  5. Stark shifting two-electron quantum dot

    International Nuclear Information System (INIS)

    Dineykhan, M.; Zhaugasheva, S.A.; Duysebaeva, K.S.

    2003-01-01

    Advances in modern technology make it possible to create semiconducting nano-structures (quantum dot) in which a finite number of electrons are 'captured' in a bounded volume. A quantum dot is associated with a quantum well formed at the interface, between two finite-size semiconductors owing to different positions of the forbidden gaps on the energy scale in these semiconductors. The possibility of monitoring and controlling the properties of quantum dots attracts considerable attention to these objects, as a new elemental basis for future generations of computers. The quantum-mechanical effects and image potential play a significant role in the description of the formation mechanism quantum dot, and determined the confinement potential in a two-electron quantum dot only for the spherical symmetric case. In the present talk, we considered the formation dynamics of two-electron quantum dot with violation of spherical symmetry. So, we have standard Stark potential. The energy spectrum two-electron quantum dot were calculated. Usually Stark interactions determined the tunneling phenomena between quantum dots

  6. Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer

    KAUST Repository

    Priante, Davide; Janjua, Bilal; Prabaswara, Aditya; Subedi, Ram Chandra; Elafandy, Rami T.; Lopatin, Sergei; Anjum, Dalaver H.; Zhao, Chao; Ng, Tien Khee; Ooi, Boon S.

    2017-01-01

    In this paper, we describe ultraviolet-A (UV-A) light-emitting diodes (LEDs) emitting at 325 nm based on a highly uniform structure of quantum-confined AlGaN quantum-disk nanowires (NWs). By incorporating a 20 nm TaN interlayer between a Ti pre-orienting layer and the silicon substrate, we eliminated the potential barrier for carrier injection and phonon transport, and inhibited the formation of interfacial silicide that led to device failure. Compared to previous reports on metal substrate, we achieved a 16 × reduction in root-mean-square (RMS) roughness, from 24 nm to 1.6 nm, for the samples with the Ti/TaN metal-bilayer, owing to the effective diffusion barrier characteristic of TaN. This was confirmed using energy dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS). We achieved a considerable increase in the injection current density (up to 90 A/cm2) compared to our previous studies, and an optical power of 1.9 μW for the 0.5 × 0.5 mm2 NWs-LED. This work provides a feasible pathway for both a reliable and stable UV-A device operation at elevated current injection, and eventually towards low-cost production of UV devices, leveraging on the scalability of silicon substrates.

  7. Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer

    KAUST Repository

    Priante, Davide

    2017-11-02

    In this paper, we describe ultraviolet-A (UV-A) light-emitting diodes (LEDs) emitting at 325 nm based on a highly uniform structure of quantum-confined AlGaN quantum-disk nanowires (NWs). By incorporating a 20 nm TaN interlayer between a Ti pre-orienting layer and the silicon substrate, we eliminated the potential barrier for carrier injection and phonon transport, and inhibited the formation of interfacial silicide that led to device failure. Compared to previous reports on metal substrate, we achieved a 16 × reduction in root-mean-square (RMS) roughness, from 24 nm to 1.6 nm, for the samples with the Ti/TaN metal-bilayer, owing to the effective diffusion barrier characteristic of TaN. This was confirmed using energy dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS). We achieved a considerable increase in the injection current density (up to 90 A/cm2) compared to our previous studies, and an optical power of 1.9 μW for the 0.5 × 0.5 mm2 NWs-LED. This work provides a feasible pathway for both a reliable and stable UV-A device operation at elevated current injection, and eventually towards low-cost production of UV devices, leveraging on the scalability of silicon substrates.

  8. Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

    International Nuclear Information System (INIS)

    Ramírez-Porras, A.; García, O.; Vargas, C.; Corrales, A.; Solís, J.D.

    2015-01-01

    Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models

  9. Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

    Energy Technology Data Exchange (ETDEWEB)

    Ramírez-Porras, A., E-mail: aramirez@fisica.ucr.ac.cr [Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA), Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); García, O. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Vargas, C. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Corrales, A. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Solís, J.D. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica)

    2015-08-30

    Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models.

  10. Stark effect in a hydrogenic atom or ion treated by the phase-integral method with adjoined papers by A. Hökback and P. O. Fröman

    CERN Document Server

    Fröman, Nanny

    2008-01-01

    This book treats the Stark effect of a hydrogenic atom or ion in a homogeneous electric field. It begins with a thorough review of previous work in this field since 1926. After the Schrödinger equation has been separated with respect to time dependence, centre of mass motion and internal motion, followed by a discussion of its eigenfunctions, the exact development in time of the probability amplitude for a decaying state is obtained by means of a formula analogous to the Fock-Krylov theorem. From this formula one obtains by means of the phase-integral approximation generated from a particular

  11. Quantum confinement and disorder in porous silicon: effects on the optical and transport properties

    International Nuclear Information System (INIS)

    Amato, G.; Boarino, L.; Brunetto, N.; Rossi, A.M.

    1996-01-01

    In this report the authors report new optical data showing that disorder in porous silicon leads to strong carrier localisation. Light emission in PS (porous silicon) is suggested to occur through transitions involving localized states

  12. Effect of quantum confinement on the dielectric function of PbSe

    NARCIS (Netherlands)

    Hens, Z.; Vanmaekelbergh, D.; Kooij, Ernst S.; Wormeester, Herbert; Allan, G.; Delerue, C.

    2004-01-01

    Monolayers of lead selenide nanocrystals of a few nanometers in height have been made by electrodeposition on a Au(111) substrate. These layers show a thickness-dependent dielectric function, which was determined using spectroscopic ellipsometry. The experimental results are compared with electronic

  13. Calculation of band alignments and quantum confinement effects in zero- and one-dimensional pseudomorphic structures

    International Nuclear Information System (INIS)

    Yang, M.; Sturm, J.C.; Prevost, J.

    1997-01-01

    The strain field distributions and band lineups of zero-dimensional and one-dimensional strained pseudomorphic semiconductor particles inside a three-dimensional matrix of another semiconductor have been studied. The resulting strain in the particle and the matrix leads to band alignments considerably different from that in the conventional two-dimensional (2D) pseudomorphic growth case. The models are first applied to an ideal spherical and cylindrical Si 1-x Ge x particle in a large Si matrix. In contrast to the 2D case, the band alignments for both structures are predicted to be strongly type II, where the conduction-band edge and the valence-band edge of the Si matrix are both significantly lower than those in the Si 1-x Ge x inclusion, respectively. Band lineups and the lowest electron endash heavy-hole transition energies of a pseudomorphic V-groove Si 1-x Ge x quantum wire inside a large Si matrix have been calculated numerically for different size structures. The photoluminescence energies of a large Si 1-x Ge x V-groove structure on Si will be lower than those of conventional 2D strained Si 1-x Ge x for similar Ge contents. copyright 1997 The American Physical Society

  14. Stark effect investigations of excited cadmium, ytterbium, and thulium I-levels using the methods of double resonance and level crossing

    International Nuclear Information System (INIS)

    Rinkleff, R.H.

    1977-01-01

    Using the method of optical double resonance, the 5s5p 3 P 1 level tensor polarizability of Cadmium has been measured. For this state, various authors have published different results, using different experimental methods. The experimental result presented here is in excellent agreement with the value of Happer, based on level crossing investigations, and agrees well with the theoretical result of Robinson based on a modified Sternheimer approximation, and so gives a reliable value for the tensor polarizability. Furthermore the tensor polarizability of the 6s6p 3 P 1 - level of the even Ytterbium isotopes and the odd Ytterbium 171 nucleus have been measured with the optical double resonance method, and the Stark constant has been calculated based on a given theory and oscillator strengths. Using the methods of optical double resonance and level crossing, the tensor polarizability of 5 excited levels of the Thulium configurations 4f 13 6s6p + 4f 12 5d6s 2 have been measured. From the experimental Stark constants and the angular coefficients of the eigenfunctions calculated by Camus, the radial integrals I(5d, 5p) and I(6p, 5d) are calculated for electric dipole transitions between levels of the configurations 4f 12 5d6s 2 + 4f 13 6s6p and levels of the 4f 12 6p6s 2 + 4f 13 6s5d configurations. The tensor polarizability calculated with these radial integrals show very good agreement with the experimental values. (orig./LH) [de

  15. DC Stark addressing for quantum memory in Tm:YAG

    Science.gov (United States)

    Gerasimov, Konstantin; Minnegaliev, Mansur; Urmancheev, Ravil; Moiseev, Sergey

    2017-10-01

    We observed a linear DC Stark effect for 3H6 - 3H4 optical transition of Tm3+ ions in Y3Al5O12. We observed that application of electric field pulse suppresses the two-pulse photon echo signal. If we then apply a second electric pulse of opposite polarity the echo signal is restored again, which indicates the linear nature of the observed effect. The effect is present despite the D2 symmetry of the Tm3+ sites that prohibits a linear Stark effect. Experimental data analysis shows that the observed electric field influence can be attributed to defects that break the local crystal field symmetry near Tm3+ ions. Using this effect we demonstrate selective retrieval of light pulses in two-pulse photon echo.

  16. Rydberg State Stark Spectroscopy and Applications to Plasma Diagnostics

    Science.gov (United States)

    1990-03-01

    Bayfield47 provides an excellent review of the AC Stark effect, in which the primary effect is Rabi splitting. Several authors48 , 49, 50 have...purity of the spectrum indicates that the field present is dominantly anisotropic . 53 n:26NEON LINE n=35 0 n= 40 p.- n=45 IL 0 31975 31950 31925 31900...applied (axial) electric field which is anisotropic , so pure polarization spectra can be recorded. The intensity profile of the Am = 0 polarization is

  17. Charge polarization effects and hole spectra characteristics in AlxGa1-xN/GaN superlattices

    International Nuclear Information System (INIS)

    Assaoui, Fatna; Pereyra, Pedro

    2001-10-01

    We study the effects of charge polarization on the extended physical properties of superlattices, such as transmission coefficients and valence band structure. We consider both linear and parabolic modulation of the band edge. Based on the theory of finite periodic systems (TFPS), analytic expressions and high precision calculations of the relevant physical quantities for n-cell systems are obtained. New and also well-known features of these systems are identified. Besides the well-known energy bandstructure, we also have the field bandstructure, with interesting characteristics. Wider field gaps at stronger internal electric fields and higher density of field bands for larger layer widths are some of these characteristics. Well defined level density asymmetries identify the minibands induced by charge polarization or the so-called Quantum Confining Stark Effect. We present the n-cell transmission amplitudes, transmission coefficients and miniband structures for different values of the relevant parameters. (author)

  18. Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinement.

    Science.gov (United States)

    Greenberg, Benjamin L; Ganguly, Shreyashi; Held, Jacob T; Kramer, Nicolaas J; Mkhoyan, K Andre; Aydil, Eray S; Kortshagen, Uwe R

    2015-12-09

    Metal oxide semiconductor nanocrystals (NCs) exhibit localized surface plasmon resonances (LSPRs) tunable within the infrared (IR) region of the electromagnetic spectrum by vacancy or impurity doping. Although a variety of these NCs have been produced using colloidal synthesis methods, incorporation and activation of dopants in the liquid phase has often been challenging. Herein, using Al-doped ZnO (AZO) NCs as an example, we demonstrate the potential of nonthermal plasma synthesis as an alternative strategy for the production of doped metal oxide NCs. Exploiting unique, thoroughly nonequilibrium synthesis conditions, we obtain NCs in which dopants are not segregated to the NC surfaces and local doping levels are high near the NC centers. Thus, we achieve overall doping levels as high as 2 × 10(20) cm(-3) in NCs with diameters ranging from 12.6 to 3.6 nm, and for the first time experimentally demonstrate a clear quantum confinement blue shift of the LSPR energy in vacancy- and impurity-doped semiconductor NCs. We propose that doping of central cores and heavy doping of small NCs are achievable via nonthermal plasma synthesis, because chemical potential differences between dopant and host atoms-which hinder dopant incorporation in colloidal synthesis-are irrelevant when NC nucleation and growth proceed via irreversible interactions among highly reactive gas-phase ions and radicals and ligand-free NC surfaces. We explore how the distinctive nucleation and growth kinetics occurring in the plasma influences dopant distribution and activation, defect structure, and impurity phase formation.

  19. Dynamic Stark shift and alignment-to-orientation conversion

    International Nuclear Information System (INIS)

    Kuntz, Matthew C.; Hilborn, Robert C.; Spencer, Alison M.

    2002-01-01

    We have observed alignment-to-orientation conversion in the (5d6p) 1 P state of atomic barium due to the combined effects of a static Zeeman shift and a dynamic Stark shift associated with the electric field of a pulsed laser beam. The measurements yield a value for the frequency-dependent tensor polarizability of the state in reasonable agreement with a simple perturbation theory calculation. With a tunable laser producing the dynamic Stark shift, we can both enhance the magnitude of the effect by tuning close to a resonance and reverse the sign of the orientation by tuning above or below the resonance. This method of producing an oriented atomic state is quite general, and with easily available field strengths can produce large orientations

  20. Supersonic Molecular Beam Optical Stark Spectroscopy of MnH.

    Science.gov (United States)

    Gengler, Jamie; Ma, Tongmei; Harrison, Jeremy; Steimle, Timothy

    2006-03-01

    The large moment of inertia, large magnetic moment, and possible large permanent electric dipole moment of manganese monohydride, MnH, makes it a prime candidate for ultra-cold molecule production via Stark deceleration and magnetic trapping. Here we report the first molecular beam production of MnH and the analysis of the Stark effect in the (0,0) A^7 π -- X^ 7σ^+ band. The sample was prepared by laser ablation of solid Mn in an H2 supersonic expansion. The low rotational temperature (MnH and the analysis of T.D. Varberg, J.A. Gray, R.W. Field, and A.J. Merer, J. Mol. Spec. 156, 296-318 (1992). I.E. Gordon, D.R.T. Appadoo, A. Shayesteh, K.A. Walker, and P.F. Bernath, J. Mol. Spec., 229, 145-149 (2005).

  1. Production of H(2s) fast metastable atoms (0.25-3 keV) on a Cs target. Detection of the α Lyman radiation induced by Stark effect: polarisation. Destruction of H(2s) atoms on an IH target

    International Nuclear Information System (INIS)

    Valance, Antoine.

    1974-01-01

    The production, detection and destruction of the 2S1/2 metastable state of the hydrogen atom were studied. The quasi-resonant charge exchange processes between fast protons and cesium target, in the total cross sections for production of metastable H(2s) atoms and radiative H(2p) atoms showed structures hitherto unobserved. The theoretical study is based on calculation of the adiabatic molecular potential terms of the ionic quasi-molecule (CsH) + , taking a Helmann type pseudopotential to describe the electron with respect to the core of the cesium ion. The probabilities of transition towards the output channels are calculated using a stationary state perturbation method. From the data obtained the interferece phenomena of excited quasi-molecular states can be interpreted coherently in slow collision. The probability of transition along the inelastic output channels displays characteristics of a harmonic oscillatory function inversely proportional to the speed of approach of the particles. The frequency of these oscillations depends very slightly on the impact parameter. The theory proposed involves three Σ states. During detection of the metastable ions the Lyman-α radiation induced in the de-excitation electric field by Stark effect present anisotropic features. The degree of polarization measured as a function of the field strength oscillates around a slow decay toward a limit-1 at strong electric field. A theory not accounting for the hyperfine structure of states mixed by Stark effect showed a double oscillatory structure containing the two frequencies correlated to the 2P1/2 and 2P3/2 states from the 2S1/2 state. Finally the results on the electron detachment reaction between fast metastable atoms and hydroiodic acid target have contributed towards research on polarized proton sources [fr

  2. Faraday-Shielded dc Stark-Shift-Free Optical Lattice Clock

    Science.gov (United States)

    Beloy, K.; Zhang, X.; McGrew, W. F.; Hinkley, N.; Yoon, T. H.; Nicolodi, D.; Fasano, R. J.; Schäffer, S. A.; Brown, R. C.; Ludlow, A. D.

    2018-05-01

    We demonstrate the absence of a dc Stark shift in an ytterbium optical lattice clock. Stray electric fields are suppressed through the introduction of an in-vacuum Faraday shield. Still, the effectiveness of the shielding must be experimentally assessed. Such diagnostics are accomplished by applying high voltage to six electrodes, which are grounded in normal operation to form part of the Faraday shield. Our measurements place a constraint on the dc Stark shift at the 10-20 level, in units of the clock frequency. Moreover, we discuss a potential source of error in strategies to precisely measure or cancel nonzero dc Stark shifts, attributed to field gradients coupled with the finite spatial extent of the lattice-trapped atoms. With this consideration, we find that Faraday shielding, complemented with experimental validation, provides both a practically appealing and effective solution to the problem of dc Stark shifts in optical lattice clocks.

  3. Stark broadening of hydrogen (1961); Sur l'effet stark dans les plasmas d'hydrogene (1961)

    Energy Technology Data Exchange (ETDEWEB)

    Fidone, I [Association Euratom-CEA Cadarache, 13 - Saint-Paul-lez-Durance (France)

    1961-07-01

    The effect of electron impacts on the Stark broadening of hydrogen atoms has been considered using a Debye-Huckel potential instead of a cut-off limit for the integrals giving the shift and the half-width. A slight difference results which in a typical case is of the order of 12 - 15 per cent. The simple adiabatic impact approximation has been used. (author) [French] L'effet des chocs electroniques sur l'elargissement Stark des raies d'hydrogene est calcule avec le potentiel de Debye-Huckel au lieu de l'emploi du cut-off pour les integrales qui donnent le deplacement et l'elargissement de la raie. On obtient une faible difference qui, dans un cas typique, est de l'ordre de grandeur de 12 - 15 pour cent. L'approximation adiabatique a ete employee pour decrire les chocs. (auteur)

  4. Optical properties and quantum confinement of nanocrystalline II-IV semiconductor particles

    NARCIS (Netherlands)

    Dijken, Albert van

    1999-01-01

    In this thesis, experiments are described that were performed on suspensions of nanocrystalline II-IV semiconductor particles.The object of this research is to study quantum size effects in relation to the luminescence properties of these particles. A pre-requisite for performing studies of

  5. Molecular quantum mechanical gradients within the polarizable embedding approach—Application to the internal vibrational Stark shift of acetophenone

    DEFF Research Database (Denmark)

    List, Nanna Holmgaard; Beerepoot, Maarten; Olsen, Jógvan Magnus Haugaard

    2015-01-01

    for the quantum region, covering (multiconfigurational) self-consistent-field and Kohn–Sham density functional theory. As the first application of the implementation, we consider the internal vibrational Stark effect of the C=O group of acetophenone in different solvents and derive its vibrational linear Stark...

  6. Quantum confinement of Bi2S3 in glass with magnetic behavior

    Directory of Open Access Journals (Sweden)

    Rajendra P. Panmand

    2013-02-01

    Full Text Available The novel Bi2S3 quantum dots (QDs glass nanosystems with unique magnetic properties have been investigated. The monodispersed QDs of size in the range of 3 to 15 nm were grown in the glass matrix. The optical study of these nanosystems clearly demonstrated the size quantization effect resulting in a pronounced band gap variation with QD size. The magnetic properties of the pristine glass and the Bi2S3 QD glass nanosystems were investigated by VSM and SQUID magnetometer. The pristine glass did not show any ferromagnetism while the Bi2S3 glass nanosystems showed significant and reproducible ferromagnetism. We also investigated the effect of the size of Bi2S3 QDs on the magnetic properties. The saturation magnetization for the 15 nm QD glass-nanosystem (124 memu/g was observed to be higher as compared to the 3nm QD glass nanosystem (58.2 memu/g. The SQUID measurement gave the excellent hysteresis up to 300K. Surprisingly, the bulk Bi2S3 powder is diamagnetic in nature but Bi2S3 quantum dots glass nanosystem showed the ferromagnetic behavior for the first time. The investigated novel QD glass-nanosystem may have a potential application in spintronic devices and most importantly, this nanosystem can be fabricated in any usable shape as per the device requirement.

  7. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    Science.gov (United States)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-06-01

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the "CVBs interaction" that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  8. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    International Nuclear Information System (INIS)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-01-01

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices

  9. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A. [Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland)

    2015-06-21

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  10. Quantum Confined Semiconductors

    Science.gov (United States)

    2015-02-01

    scattering mechanisms ( acoustic , piezoelectric, polar and non-polar optical) and the ionized impurity scattering. Since InAs and GaSb are binary... pyrometer referenced at GaSb oxide desorption temperature of 530 C. Figure 6a plots the 10 K carrier densities as a function of Tg. The SLs grown

  11. Study of Stark Effect in n-doped 1.55 μm InN0.92yP1-1.92yBiy/InP MQWs

    Science.gov (United States)

    Bilel, C.; Chakir, K.; Rebey, A.; Alrowaili, Z. A.

    2018-05-01

    The effect of an applied electric field on electronic band structure and optical absorption properties of n-doped InN0.92y P1-1.92y Bi y /InP multiple quantum wells (MQWs) was theoretically studied using a self-consistent calculation combined with the 16-band anti-crossing model. The incorporation of N and Bi atoms into an InP host matrix leads to rapid reduction of the band gap energy covering a large infrared range. The optimization of the well parameters, such as the well/barrier widths, N/Bi compositions and doping density, allowed us to obtain InN0.92y P1-1.92y Bi y /InP MQWs operating at the wavelength 1.55 μm. Application of the electric field causes a red-shift of the fundamental transition energy T 1 accompanied by a significant change in the spatial distribution of confined electron density. The Stark effect on the absorption coefficient of n-doped InN0.92y P1-1.92y Bi y /InP MQWs was investigated. The Bi composition of these MQWs was adjusted for each electric field value in order to maintain the wavelength emission at 1.55 μm.

  12. H{sub {beta}} Stark broadening in cold plasmas with low electron densities calibrated with Thomson scattering

    Energy Technology Data Exchange (ETDEWEB)

    Palomares, J.M., E-mail: j.m.palomares-linares@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Huebner, S.; Carbone, E.A.D.; Vries, N. de; Veldhuizen, E.M. de [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Sola, A.; Gamero, A. [Departamento de Fisica, Universidad de Cordoba, Campus de Rabanales, ed. C-2, 14071 Cordoba (Spain); Mullen, J.J.A.M. van der [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2012-07-15

    In the present work Stark broadening measurements have been carried out on low electron density (n{sub e} < 5{center_dot}10{sup 19} m{sup -3}) and (relatively) low gas temperature (T{sub g} < 1100 K) argon-hydrogen plasma, under low-intermediate pressure conditions (3 mbar-40 mbar). A line fitting procedure is used to separate the effects of the different broadening mechanisms (e.g. Doppler and instrumental broadening) from the Stark broadening. A Stark broadening theory is extrapolated to lower electron density values, below its theoretical validity regime. Thomson scattering measurements are used to calibrate and validate the procedure. The results show an agreement within 20%, what validates the use of this Stark broadening method under such low density conditions. It is also found that Stark broadened profiles cannot be assumed to be purely Lorentzian. Such an assumption would lead to an underestimation of the electron density. This implies that independent information on the gas temperature is needed to find the correct values of n{sub e}. - Highlights: Black-Right-Pointing-Pointer Stark broadening measurements at low density and temperature conditions Black-Right-Pointing-Pointer Calibration with Thomson scattering Black-Right-Pointing-Pointer Indications of the non-Lorentzian shape of the Stark broadening Black-Right-Pointing-Pointer Impossibility of simultaneous diagnostic of gas temperature and electron density.

  13. Runge-Lenz wave packet in multichannel Stark photoionization

    International Nuclear Information System (INIS)

    Texier, F.

    2005-01-01

    In a previous slow photoionization experiment, modulations of ionization rings were manifested for Xe in a constant electric field. The present quantum calculation reveals that the modulation is an effect of the multichannel core scattering and of tunneling waves through the Coulomb-Stark potential barrier: the barrier reduces the number of oscillations that is observed relatively to the number of oscillations of the short range wave functions, and the nonhydrogenic core phase shifts modify the position of the ionization rings. We find a hidden difference, in the ionization process, for two close values of the energy depending on the resonance with the barrier. The ionization intensity is interpreted as a Runge-Lenz wave packet; thus, we can relate the quantum modulation to the classical Coulomb-Stark trajectories. The Runge-Lenz wave packet differs from a usual temporal wave packet because its components are eigenstates of the Runge-Lenz vector z projection and its evolution is not temporal but spatial

  14. Stark Broadening of Cr III Spectral Lines: DO White Dwarfs

    Directory of Open Access Journals (Sweden)

    Milan S. Dimitrijević

    2018-04-01

    Full Text Available Using the modified semiempirical method of Dimitrijević and Konjević, Stark widths have been calculated for six Cr III transitions, for an electron density of 10 17 cm ‒ 3 and for temperatures from 5000–80,000 K. Results have been used for the investigation of the influence of Stark broadening on spectral lines in cool DO white dwarf atmospheres. Calculated Stark widths will be implemented in the STARK-B database, which is also a part of the Virtual Atomic and Molecular Data Center (VAMDC.

  15. Colloidal Synthesis of Quantum Confined Single Crystal CsPbBr3 Nanosheets with Lateral Size Control up to the Micrometer Range.

    Science.gov (United States)

    Shamsi, Javad; Dang, Zhiya; Bianchini, Paolo; Canale, Claudio; Stasio, Francesco Di; Brescia, Rosaria; Prato, Mirko; Manna, Liberato

    2016-06-15

    We report the nontemplated colloidal synthesis of single crystal CsPbBr3 perovskite nanosheets with lateral sizes up to a few micrometers and with thickness of just a few unit cells (i.e., below 5 nm), hence in the strong quantum confinement regime, by introducing short ligands (octanoic acid and octylamine) in the synthesis together with longer ones (oleic acid and oleylamine). The lateral size is tunable by varying the ratio of shorter ligands over longer ligands, while the thickness is mainly unaffected by this parameter and stays practically constant at 3 nm in all the syntheses conducted at short-to-long ligands volumetric ratio below 0.67. Beyond this ratio, control over the thickness is lost and a multimodal thickness distribution is observed.

  16. Science Translator: An Interview with Louisa Stark.

    Science.gov (United States)

    Stark, Louisa A

    2015-07-01

    The Genetics Society of America's Elizabeth W. Jones Award for Excellence in Education recognizes significant and sustained impact on genetics education. The 2015 awardee, Louisa Stark, has made a major impact on global access to genetics education through her work as director of the University of Utah Genetic Science Learning Center. The Center's Learn.Genetics and Teach.Genetics websites are the most widely used online genetic education resources in the world. In 2014, they were visited by 18 million students, educators, scientists, and members of the public. With over 60 million page views annually, Learn.Genetics is among the most used sites on the Web. Copyright © 2015 by the Genetics Society of America.

  17. Stark-like electron transfer between quantum wells

    International Nuclear Information System (INIS)

    Dubovis, S.A.; Voronko, A.N.; Basharov, A.M.

    2008-01-01

    The Stark-like mechanism of electron transfer between two energy subband localized in remote quantum wells is examined theoretically. Estimations of major parameters of the problem in case of delta-function-wells model are adduced. Schematic model allowing experimental study of Stark-like transfer is proposed

  18. Fabrication of Ge nanocrystals doped silica-on-silicon waveguides and observation of their strong quantum confinement effect

    DEFF Research Database (Denmark)

    Ou, Haiyan; Rottwitt, Karsten

    2009-01-01

    Germanium (Ge) nanocrystals embedded in silica matrix is an interesting material for new optoelectronic devices. In this paper, standard silica-on-silicon waveguides with a core doped by Ge nanocrystals were fabricated using plasma enhanced chemical vapour deposition and reactive ion etching...

  19. Stark shift of impurity doped quantum dots: Role of noise

    Science.gov (United States)

    Arif, Sk. Md.; Bera, Aindrila; Ghosh, Anuja; Ghosh, Manas

    2018-02-01

    Present study makes a punctilious investigation of the profiles of Stark shift (SS) of doped GaAs quantum dot (QD) under the supervision of Gaussian white noise. A few physical parameters have been varied and the consequent variations in the SS profiles have been monitored. The said physical parameters comprise of magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for AlxGa1-x As alloy QD), position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The SS profiles unfurl interesting features that heavily depend upon the particular physical quantity concerned, presence/absence of noise and the manner (additive/multiplicative) noise enters the system. The study highlights feasible means of maximizing SS of doped QD in presence of noise by suitable adjustment of several control parameters. The study deems importance in view of technological applications of QD devices where noise plays some prominent role.

  20. Modeling of hydrogen Stark line shapes with kinetic theory methods

    Science.gov (United States)

    Rosato, J.; Capes, H.; Stamm, R.

    2012-12-01

    The unified formalism for Stark line shapes is revisited and extended to non-binary interactions between an emitter and the surrounding perturbers. The accuracy of this theory is examined through comparisons with ab initio numerical simulations.

  1. Multiphoton Rabi oscillations between highly excited Stark states of potassium

    International Nuclear Information System (INIS)

    He Yonglin

    2011-01-01

    We have applied a nonperturbative resonant theory to study the Rabi frequency of microwave multiphoton transitions between two Rydberg states of potassium in a static electric field. The Stark electric dipole moments used to calculate the Rabi frequency are determined by the Stark states' wave functions, which are obtained by the diagonalization method. The frequencies of the Rabi oscillations are in good agreement with either experimental ones or ones calculated by the time-dependent close-coupling method and the Floquet theory. Furthermore, we are able to show that the size of avoided crossings between the (n+2)s and (n,3) states can be predicted from the Stark electric dipole moment and the difference of the two Stark states' energy at a given resonance.

  2. Stark laws and fair market value exceptions: an introduction.

    Science.gov (United States)

    Siebrasse, Paul B

    2007-01-01

    This article will focus on one aspect of complexity in modern healthcare, namely the implications of Stark laws and other fraud and abuse provisions, including anti-kickback statutes and HIPAA. Also, this article explores the prevalence of fair market value as an exception in the Stark laws and discusses the meanings of those exceptions. Finally, the article explores basic approaches to assessing fair market value, including cost, income, and marketing approaches.

  3. Stark broadening measurements of Xe III spectral lines

    International Nuclear Information System (INIS)

    Pelaez, R J; Cirisan, M; Djurovic, S; Aparicio, J A; Mar, S

    2006-01-01

    This work reports measured Stark widths of doubly ionized xenon lines. Pulsed arc was used as a plasma source. Measured electron densities and temperatures were in the ranges of (0.2 - 1.6) x 10 23 m -3 and 18 300-25 500 K, respectively. Stark halfwidths of lines from 6s-6p, 6s-4f and 5d-6p transitions have been measured and compared with available experimental and theoretical data

  4. Stark widths regularities within spectral series of sodium isoelectronic sequence

    Science.gov (United States)

    Trklja, Nora; Tapalaga, Irinel; Dojčinović, Ivan P.; Purić, Jagoš

    2018-02-01

    Stark widths within spectral series of sodium isoelectronic sequence have been studied. This is a unique approach that includes both neutrals and ions. Two levels of problem are considered: if the required atomic parameters are known, Stark widths can be calculated by some of the known methods (in present paper modified semiempirical formula has been used), but if there is a lack of parameters, regularities enable determination of Stark broadening data. In the framework of regularity research, Stark broadening dependence on environmental conditions and certain atomic parameters has been investigated. The aim of this work is to give a simple model, with minimum of required parameters, which can be used for calculation of Stark broadening data for any chosen transitions within sodium like emitters. Obtained relations were used for predictions of Stark widths for transitions that have not been measured or calculated yet. This system enables fast data processing by using of proposed theoretical model and it provides quality control and verification of obtained results.

  5. Utilizing the dynamic stark shift as a probe for dielectric relaxation in photosynthetic reaction centers during charge separation.

    Science.gov (United States)

    Guo, Zhi; Lin, Su; Woodbury, Neal W

    2013-09-26

    In photosynthetic reaction centers, the electric field generated by light-induced charge separation produces electrochromic shifts in the transitions of reaction center pigments. The extent of this Stark shift indirectly reflects the effective field strength at a particular cofactor in the complex. The dynamics of the effective field strength near the two monomeric bacteriochlorophylls (BA and BB) in purple photosynthetic bacterial reaction centers has been explored near physiological temperature by monitoring the time-dependent Stark shift during charge separation (dynamic Stark shift). This dynamic Stark shift was determined through analysis of femtosecond time-resolved absorbance change spectra recorded in wild type reaction centers and in four mutants at position M210. In both wild type and the mutants, the kinetics of the dynamic Stark shift differ from those of electron transfer, though not in the same way. In wild type, the initial electron transfer and the increase in the effective field strength near the active-side monomer bacteriochlorophyll (BA) occur in synchrony, but the two signals diverge on the time scale of electron transfer to the quinone. In contrast, when tyrosine is replaced by aspartic acid at M210, the kinetics of the BA Stark shift and the initial electron transfer differ, but transfer to the quinone coincides with the decay of the Stark shift. This is interpreted in terms of differences in the dynamics of the local dielectric environment between the mutants and the wild type. In wild type, comparison of the Stark shifts associated with BA and BB on the two quasi-symmetric halves of the reaction center structure confirm that the effective dielectric constants near these cofactors are quite different when the reaction center is in the state P(+)QA(-), as previously determined by Steffen et al. at 1.5 K (Steffen, M. A.; et al. Science 1994, 264, 810-816). However, it is not possible to determine from static, low-temperature measurments if the

  6. ZEST: A Fast Code for Simulating Zeeman-Stark Line-Shape Functions

    Directory of Open Access Journals (Sweden)

    Franck Gilleron

    2018-03-01

    Full Text Available We present the ZEST code, dedicated to the calculation of line shapes broadened by Zeeman and Stark effects. As concerns the Stark effect, the model is based on the Standard Lineshape Theory in which ions are treated in the quasi-static approximation, whereas the effects of electrons are represented by weak collisions in the framework of a binary collision relaxation theory. A static magnetic field may be taken into account in the radiator Hamiltonian in the dipole approximation, which leads to additional Zeeman splitting patterns. Ion dynamics effects are implemented using the fast Frequency-Fluctuation Model. For fast calculations, the static ion microfield distribution in the plasma is evaluated using analytic fits of Monte-Carlo simulations, which depend only on the ion-ion coupling parameter and the electron-ion screening factor.

  7. Interband optical absorption in the Wannier-Stark ladder under the electron-LO-phonon resonance condition

    International Nuclear Information System (INIS)

    Govorov, A.O.

    1993-08-01

    Interband optical absorption in the Wannier-Stark ladder in the presence of the electron-LO-phonon resonance is investigated theoretically. The electron-LO-phonon resonance occurs when the energy spacing between adjacent Stark-ladder levels coincides with the LO-phonon energy. We propose a model describing the polaron effect in a superlattice. Calculations show that the absorption line shape is strongly modified due to the polaron effect under the electron-LO-phonon resonance condition. We consider optical phenomena in a normal magnetic field that leads to enhancement of polaron effects. (author). 17 refs, 5 figs

  8. Properties of Linear Entropy in k-Photon Jaynes-Cummings Model with Stark Shift and Kerr-Like Medium

    International Nuclear Information System (INIS)

    Liao Qinghong; Wang Yueyuan; Liu Shutian; Ahmad, Muhammad Ashfaq

    2010-01-01

    The time evolution of the linear entropy of an atom in k-photon Jaynes-Cummings model is investigated taking into consideration Stark shift and Kerr-like medium. The effect of both the Stark shift and Kerr-like medium on the linear entropy is analyzed using a numerical technique for the field initially in coherent state and in even coherent state. The results show that the presence of the Kerr-like medium and Stark shift has an important effect on the properties of the entropy and entanglement. It is also shown that the setting of the initial state plays a significant role in the evolution of the linear entropy and entanglement. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  9. Stark broadening of the Hα line of hydrogen at low densities: quantal and semiclassical results

    International Nuclear Information System (INIS)

    Stehle, C.; Feautrier, N.

    1984-01-01

    Stark profiles of the Hα lines of hydrogen are computed at low densities in the 'impact' theory. By a comparison with quantal results, it is shown that a simple semiclassical perturbational approach with appropriate cutoffs is sufficient to give accurate profiles in the line centre. Neglecting the natural broadening and the fine-structure effects, the authors prove that the electronic broadening is negligible and that the profile has a Lorentzian shape. An analytical expression of the half width is given. (author)

  10. Asymmetry of Hβ Stark profiles in T-tube hydrogen plasma

    International Nuclear Information System (INIS)

    Djurovic, S.; Nikolic, D.; Savic, I.; Soerge, S.; Demura, A. V.

    2005-01-01

    The whole Balmer H β line profiles are studied in detail experimentally in the T-tube discharge for the wide range of plasma parameters. Besides the common one, two additional parameters are introduced to characterize the asymmetry behavior of the experimental Stark profiles with the reference point chosen in the center of the line. The experimental data are analyzed and benchmarked versus the simple theoretical model based on the effects of microfield nonuniformity and electron impact shifts

  11. Asymmetry of Stark-broadened Layman lines from laser-produced plasmas

    International Nuclear Information System (INIS)

    Joyce, R.F.; Woltz, L.A.; Hooper, C.F. Jr.

    1986-01-01

    This paper discusses three significant causes of spectral line asymmetry: the ion-quadrupole interaction, the quadratic Stark effect and fine structure splitting that are included in the calculation of Lyman line profiles emitted by highly-ionized hydrogenic radiators in a dense, hot plasma. The line asymmetries are shown to be strongly dependent on the plasma density, indicating that the asymmetry may be of use as a density diagnostic

  12. Stark widths of Xe II lines in a pulsed plasma

    International Nuclear Information System (INIS)

    Djurovic, S; Pelaez, R J; Cirisan, M; Aparicio, J A; Mar, S

    2006-01-01

    In this paper, we present a review of experimental work on Stark broadening of singly ionized xenon lines. Eighty lines, from close UV to the red region of the spectrum, have been studied. Stark halfwidths were compared with experimental data from the literature and modified semi-empirical calculations. A pulsed arc with 95% of helium and 5% xenon was used as a plasma source for this study. Measured electron densities N e and temperatures T were in the ranges of 0.2-1.6 x 10 23 m -3 and 18 300-25 500 K, respectively

  13. Stark broadening parameters and transition probabilities of persistent lines of Tl II

    Science.gov (United States)

    de Andrés-García, I.; Colón, C.; Fernández-Martínez, F.

    2018-05-01

    The presence of singly ionized thallium in the stellar atmosphere of the chemically peculiar star χ Lupi was reported by Leckrone et al. in 1999 by analysis of its stellar spectrum obtained with the Goddard High Resolution Spectrograph (GHRS) on board the Hubble Space Telescope. Atomic data about the spectral line of 1307.50 Å and about the hyperfine components of the spectral lines of 1321.71 Å and 1908.64 Å were taken from different sources and used to analyse the isotopic abundance of thallium II in the star χ Lupi. From their results the authors concluded that the photosphere of the star presents an anomalous isotopic composition of Tl II. A study of the atomic parameters of Tl II and of the broadening by the Stark effect of its spectral lines (and therefore of the possible overlaps of these lines) can help to clarify the conclusions about the spectral abundance of Tl II in different stars. In this paper we present calculated values of the atomic transition probabilities and Stark broadening parameters for 49 spectral lines of Tl II obtained by using the Cowan code including core polarization effects and the Griem semiempirical approach. Theoretical values of radiative lifetimes for 11 levels (eight with experimental values in the bibliography) are calculated and compared with the experimental values in order to test the quality of our results. Theoretical trends of the Stark width and shift parameters versus the temperature for spectral lines of astrophysical interest are displayed. Trends of our calculated Stark width for the isoelectronic sequence Tl II-Pb III-Bi IV are also displayed.

  14. Existence of the Stark-Wannier quantum resonances

    Energy Technology Data Exchange (ETDEWEB)

    Sacchetti, Andrea, E-mail: andrea.sacchetti@unimore.it [Department of Physics, Computer Sciences and Mathematics, University of Modena e Reggio Emilia, Modena (Italy)

    2014-12-15

    In this paper, we prove the existence of the Stark-Wannier quantum resonances for one-dimensional Schrödinger operators with smooth periodic potential and small external homogeneous electric field. Such a result extends the existence result previously obtained in the case of periodic potentials with a finite number of open gaps.

  15. Rydberg-Stark states of Positronium for atom optics

    International Nuclear Information System (INIS)

    Alonso, A M; Cooper, B S; Deller, A; Hogan, S D; Wall, T E; Cassidy, D B

    2015-01-01

    Positronium atoms were produced in Rydberg states by means of a two-step optical excitation process (1s→2p→nd/ns). The n = 11 Rydberg-Stark manifold has been studied using different laser polarizations providing greater control over the electric dipole moment. (paper)

  16. On the Application of Stark Broadening Data Determined with a Semiclassical Perturbation Approach

    Directory of Open Access Journals (Sweden)

    Milan S. Dimitrijević

    2014-08-01

    Full Text Available The significance of Stark broadening data for problems in astrophysics, physics, as well as for technological plasmas is discussed and applications of Stark broadening parameters calculated using a semiclassical perturbation method are analyzed.

  17. Quantum mechanical calculation of electric fields and vibrational Stark shifts at active site of human aldose reductase.

    Science.gov (United States)

    Wang, Xianwei; Zhang, John Z H; He, Xiao

    2015-11-14

    Recent advance in biophysics has made it possible to directly measure site-specific electric field at internal sites of proteins using molecular probes with C = O or C≡N groups in the context of vibrational Stark effect. These measurements directly probe changes of electric field at specific protein sites due to, e.g., mutation and are very useful in protein design. Computational simulation of the Stark effect based on force fields such as AMBER and OPLS, while providing good insight, shows large errors in comparison to experimental measurement due to inherent difficulties associated with point charge based representation of force fields. In this study, quantum mechanical calculation of protein's internal electrostatic properties and vibrational Stark shifts was carried out by using electrostatically embedded generalized molecular fractionation with conjugate caps method. Quantum calculated change of mutation-induced electric field and vibrational Stark shift is reported at the internal probing site of enzyme human aldose reductase. The quantum result is in much better agreement with experimental data than those predicted by force fields, underscoring the deficiency of traditional point charge models describing intra-protein electrostatic properties.

  18. Quantum mechanical calculation of electric fields and vibrational Stark shifts at active site of human aldose reductase

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xianwei [Center for Optics and Optoelectronics Research, College of Science, Zhejiang University of Technology, Hangzhou, Zhejiang 310023 (China); State Key Laboratory of Precision Spectroscopy, Institute of Theoretical and Computational Science, East China Normal University, Shanghai 200062 (China); Zhang, John Z. H.; He, Xiao, E-mail: xiaohe@phy.ecnu.edu.cn [State Key Laboratory of Precision Spectroscopy, Institute of Theoretical and Computational Science, East China Normal University, Shanghai 200062 (China); NYU-ECNU Center for Computational Chemistry at NYU Shanghai, Shanghai 200062 (China)

    2015-11-14

    Recent advance in biophysics has made it possible to directly measure site-specific electric field at internal sites of proteins using molecular probes with C = O or C≡N groups in the context of vibrational Stark effect. These measurements directly probe changes of electric field at specific protein sites due to, e.g., mutation and are very useful in protein design. Computational simulation of the Stark effect based on force fields such as AMBER and OPLS, while providing good insight, shows large errors in comparison to experimental measurement due to inherent difficulties associated with point charge based representation of force fields. In this study, quantum mechanical calculation of protein’s internal electrostatic properties and vibrational Stark shifts was carried out by using electrostatically embedded generalized molecular fractionation with conjugate caps method. Quantum calculated change of mutation-induced electric field and vibrational Stark shift is reported at the internal probing site of enzyme human aldose reductase. The quantum result is in much better agreement with experimental data than those predicted by force fields, underscoring the deficiency of traditional point charge models describing intra-protein electrostatic properties.

  19. Measurements of the internal magnetic field on DIII-D using intensity and spacing of the motional Stark multiplet.

    Science.gov (United States)

    Pablant, N A; Burrell, K H; Groebner, R J; Kaplan, D H; Holcomb, C T

    2008-10-01

    We describe a version of a motional Stark effect (MSE) diagnostic based on the relative line intensities and spacing of Stark split D(alpha) emission from the neutral beams. This system, named B-Stark, has been recently installed on the DIII-D tokamak. To find the magnetic pitch angle, we use the ratio of the intensities of the pi(3) and sigma(1) lines. These lines originate from the same upper level and so are not dependent on the level populations. In future devices, such as ITER, this technique may have advantages over diagnostics based on MSE polarimetry. We have done an optimization of the viewing direction for the available ports on DIII-D to choose the installation location. With this placement, we have a near optimal viewing angle of 59.6 degrees from the vertical direction. All hardware has been installed for one chord, and we have been routinely taking data since January 2007. We fit the spectra using a simple Stark model in which the upper level populations of the D(alpha) transition are treated as free variables. The magnitude and direction of the magnetic field obtained using this diagnostic technique compare well with measurements from MSE polarimetry and EFIT.

  20. Stark-shift of impurity fundamental state in a lens shaped quantum dot

    Science.gov (United States)

    Aderras, L.; Bah, A.; Feddi, E.; Dujardin, F.; Duque, C. A.

    2017-05-01

    We calculate the Stark effect and the polarisability of shallow-donor impurity located in the centre of lens shaped quantum dot by a variational method and in the effective-mass approximation. Our theoretical model assumes an infinite confinement to describe the barriers at the dot boundaries and the electric field is considered to be applied in the z-direction. The systematic theoretical investigation contains results with the quantum dot size and the strength of the external field. Our calculations reveal that the interval wherein the polarisability varies depends strongly on the dot size.

  1. Stark broadening of Ca IV spectral lines of astrophysical interest

    Science.gov (United States)

    Alonso-Medina, A.; Colón, C.

    2014-12-01

    Ca IV emission lines are under the preview of Solar Ultraviolet Measurements of Emitted Radiation device aboard the Solar and Heliospheric Observatory. Also, lines of the Ca IV in planetary nebulae NGC 7027 were detected with the Short Wavelength Spectrometer on board the Infrared Space Observatory. These facts justify an attempt to provide new spectroscopic parameters of Ca IV. There are no theoretical or experimental Stark broadening data for Ca IV. Using the Griem semi-empirical approach and the COWAN code, we report in this paper calculated values of the Stark broadening parameters for 467 lines of Ca IV. They were calculated using a set of wavefunctions obtained by using Hartree-Fock relativistic calculations. These lines arising from 3s23p4ns (n = 4, 5), 3s23p44p, 3s23p4nd (n = 3, 4) configurations. Stark widths and shifts are presented for an electron density of 1017 cm-3 and temperatures T = 10 000, 20 000 and 50 200 K. As these data cannot be compared to others in the literature, we present an analysis of the different regularities of the values presented in this work.

  2. Stark broadening parameter regularities and interpolation and critical evaluation of data for CP star atmospheres research: Stark line shifts

    Science.gov (United States)

    Dimitrijevic, M. S.; Tankosic, D.

    1998-04-01

    In order to find out if regularities and systematic trends found to be apparent among experimental Stark line shifts allow the accurate interpolation of new data and critical evaluation of experimental results, the exceptions to the established regularities are analysed on the basis of critical reviews of experimental data, and reasons for such exceptions are discussed. We found that such exceptions are mostly due to the situations when: (i) the energy gap between atomic energy levels within a supermultiplet is equal or comparable to the energy gap to the nearest perturbing levels; (ii) the most important perturbing level is embedded between the energy levels of the supermultiplet; (iii) the forbidden transitions have influence on Stark line shifts.

  3. Exceptions to the Stark law: practical considerations for surgeons.

    Science.gov (United States)

    Satiani, Bhagwan

    2006-03-01

    The purpose of this study was to provide an understanding of the applicable legislative exceptions to prohibitions under the Stark law, which governs common legitimate business relationships in surgical practice. Stark I and II prohibits all referrals (and claims) for the provision of designated health services for federal reimbursement if a physician or immediate family member has any financial relationship with the entity. Regardless of intent (unlike the antikickback statute), any financial relationship is illegal unless specifically excepted by statute. These exceptions are relevant to ownership, compensation arrangements, or both. The most important ones relevant to surgeons are as follows: physician service exception (services rendered in an intragroup referral); in-office ancillary services exception (office-based vascular laboratory); the whole hospital exception (ownership interest in a hospital or department); lease exception (conditions that must be met for a lease not to be considered illegal); bona fide employment exception (important to academic medical centers); personal services arrangement exception (vascular laboratory medical directorship); physician incentive plans exception (if volume or value of referrals are an issue); hospital-affiliated group practice exception (physician services billed by a hospital); recruitment arrangement exception (inducements by hospitals to relocate); items/services exception (transcription services purchased from a hospital); fair market value exception (covers services provided to health care entities); indirect compensation arrangements (dealings between a hospital and entity owned by physicians); and academic medical centers exception (new phase II rules broaden the definition of academic medical centers and ease the requirement that practice plans be tax-exempt organizations, among other changes. Although expert legal advice is required for navigation through the maze of Stark laws, it is incumbent on surgeons

  4. Stark broadening of several Bi IV spectral lines of astrophysical interest

    Science.gov (United States)

    Colón, C.; Moreno-Díaz, C.; de Andrés-García, I.; Alonso-Medina, A.

    2017-09-01

    The presence of spectral lines of bismuth in stellar atmospheres has been reported in different stars. The anomalous values of the spectral intensities of Bi II and Bi III, compared to the theoretical Local Termodinamic Equilibrium (LTE) standards of Bi I/Bi II/Bi III, have been reported in the spectra obtained with the High Resolution Spectrograph of the Hubble/Goddard Space Telescope in the chemically peculiar stars HgMn stars χ Lupi and HR 7775. Spectral lines of 1436.8, 1902.3, 2630.9 and 2936.7 Å of Bi II and 1423.4 Å of Bi III were reported and their relative intensities were measured in these studies Litzén & Wahlgren 2002. These lines are overlapped with spectral lines of 1437.65, 2630.1 and 2937.1 Å of Bi IV. A study of the Stark broadening parameters of Bi IV spectral lines can help to study these overlaps. In this paper, using the Griem semi-empirical approach, we report calculated values of the Stark parameters for 64 spectral lines of Bi IV. The matrix elements used in these calculations have been determined from 17 configurations of Bi IV. They were calculated using the cowan code including core polarization effects. Data are displayed for an electron density of 1017 cm-3 and temperatures T = 10 000-160 000 K. Also calculated radiative lifetimes for 12 levels with experimental lifetime are presented, in order to test the goodness of our calculations. Theoretical trends of the Stark width and shift parameters versus the temperature for spectral lines of astrophysical interest are displayed.

  5. The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J. [Department of Material Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2014-09-01

    In this paper, we report on the effects of including Si-doped (In)GaN prelayers on the low temperature optical properties of a blue-light emitting InGaN/GaN single quantum well. We observed a large blue shift of the photoluminescence peak emission energy and significant increases in the radiative recombination rate for the quantum well structures that incorporated Si-doped prelayers. Simulations of the variation of the conduction and valence band energies show that a strong modification of the band profile occurs for the quantum wells on Si-doped prelayers due to an increase in strength of the surface polarization field. The enhanced surface polarization field opposes the built-in field across the quantum well and thus reduces this built-in electric field. This reduction of the electric field across the quantum well reduces the Quantum Confined Stark Effect and is responsible for the observed blue shift and the change in the recombination dynamics.

  6. Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Netzel, Carsten; Hoffmann, Veit; Wernicke, Tim; Knauer, Arne; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2010-07-15

    To determine relevant processes affecting the internal quantum efficiency in GaInN quantum well structures, we have studied the temperature and excitation power dependent photoluminescence intensity for quantum wells with different well widths on (0001) c-plane GaN and for quantum wells on nonpolar (11-20) a-plane GaN. In thick polar quantum wells, the quantum confined Stark effect (QCSE) causes a stronger intensity decrease with increasing temperature as long as the radiative recombination dominates. At higher temperatures, when the nonradiative recombination becomes more important, thick polar quantum wells feature a lower relative intensity decrease than thinner polar or nonpolar quantum wells. Excitation power dependent photoluminescence points to a transition from a recombination of excitons to a bimolecular recombination of uncorrelated charge carriers for thick polar quantum wells in the same temperature range. This transition might contribute to the limitation of nonradiative recombination by a reduced diffusivity of charge carriers. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Study of electro-optic effect in asymmetrically ramped AlInGaAs multiple quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Sadiq, Muhammad Usman; Peters, Frank H.; Corbett, Brian [Tyndall National Institute, Lee Maltings, Cork (Ireland); Department of Physics, University College Cork, Cork (Ireland); O' Callaghan, James; Roycroft, Brendan; Thomas, Kevin; Pelucchi, Emanuele [Tyndall National Institute, Lee Maltings, Cork (Ireland)

    2016-04-15

    We investigate the electro-optic properties of two oppositely ramped asymmetric quantum well structures in the AlInGaAs material system. The grading of the bandgap in the quantum wells has been achieved by changing the ratio of Al to Ga in the quaternary alloy during the epitaxial growth. The surface normal photo-response and the Fabry-Perot fringe shift in straight waveguides are compared for both structures as a function of applied voltage at 1550 nm for TE-polarized light. The measurements show a change in the refractive index due to a red shift of the excitonic resonances due to the quantum-confined Stark effect. The 10 quantum well structure with a ramp up of the bandgap in the growth direction leads to the figure of merit of the voltage for a π phase shift, V{sub π} by length, L, V{sub π} x L, of 6 as compared to 7 V . mm in the structure with a ramp in opposite direction. Further investigations show that the reduction in V{sub π} is due to increased absorption at high reverse bias which induces a non-linear phase change. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Stark-shift induced resonances in multiphoton ionization

    International Nuclear Information System (INIS)

    Potvliege, R M; Vuci, Svetlana

    2006-01-01

    The resonance enhancements marking the ATI spectrum of argon are discussed in the light of a recently compiled map of the quasienergies of this atom. Many of the dressed excited states of interest shift nonponderomotively in complicated ways, but keep an ionization width narrow enough to produce sharp substructures of both low and high ATI peaks through Stark-shift induced resonances. The most prominent enhancement observed in the high-order ATI peaks originates from ionization from the dressed ground state perturbed by the influence of neighbouring resonant dressed states

  9. Propagation of vector solitons in a quasi-resonant medium with stark deformation of quantum states

    Energy Technology Data Exchange (ETDEWEB)

    Sazonov, S. V., E-mail: sazonov.sergei@gmail.com [National Research Centre Kurchatov Institute (Russian Federation); Ustinov, N. V., E-mail: n_ustinov@mail.ru [Moscow State Railway University, Kaliningrad Branch (Russian Federation)

    2012-11-15

    The nonlinear dynamics of a vector two-component optical pulse propagating in quasi-resonance conditions in a medium of nonsymmetric quantum objects is investigated for Stark splitting of quantum energy levels by an external electric field. We consider the case when the ordinary component of the optical pulse induces {sigma} transitions, while the extraordinary component induces the {pi} transition and shifts the frequencies of the allowed transitions due to the dynamic Stark effect. It is found that under Zakharov-Benney resonance conditions, the propagation of the optical pulse is accompanied by generation of an electromagnetic pulse in the terahertz band and is described by the vector generalization of the nonlinear Yajima-Oikawa system. It is shown that this system (as well as its formal generalization with an arbitrary number of optical components) is integrable by the inverse scattering transformation method. The corresponding Darboux transformations are found for obtaining multisoliton solutions. The influence of transverse effects on the propagation of vector solitons is investigated. The conditions under which transverse dynamics leads to self-focusing (defocusing) of solitons are determined.

  10. Stark shift and photoionization cross section of on-center and off-center donor impurity in a core/shell ellipsoidal quantum dot

    Science.gov (United States)

    Shi, L.; Yan, Z. W.

    2018-04-01

    Within the framework of the effective-mass approximation and by using a variational method, the Stark shift of on-center and off-center donor impurity binding energies and photoionization cross section under a z-direction electric field in a prolate (oblate) core/shell ellipsoidal quantum dot has been studied. We have calculated the Stark shift as a function of the core and shell sizes and shapes, electric field, and impurity position. We also discuss the photoionization cross section as a function of photon energy with different core and shell sizes and shapes, electric field strengths, and impurity positions. The results show that the Stark shift depends strongly on the impurity position, it could be positive or negative. The core and shell sizes and shapes also have a pronounce influence on the Stark shift, and the Stark shift changes with them is non-monotonic, especially when the impurity is located at the -z-axis, the situation will become complicated. In addition, the core and shell sizes and shapes, impurity position, and electric field also have an important influence on the photoionization cross section. In particular, the photoionization cross section will vanish when the impurity is located at center of spherical core with spherical or prolate shell case at zero field.

  11. Stark broadening in cold plasmas with low electron densities calibrated with Thomson scattering

    International Nuclear Information System (INIS)

    Palomares, J.M.; Hübner, S.; Carbone, E.A.D.; Vries, N. de; Veldhuizen, E.M. de; Sola, A.; Gamero, A.; Mullen, J.J.A.M. van der

    2012-01-01

    In the present work Stark broadening measurements have been carried out on low electron density (n e 19 m −3 ) and (relatively) low gas temperature (T g e . - Highlights: ► Stark broadening measurements at low density and temperature conditions ► Calibration with Thomson scattering ► Indications of the non-Lorentzian shape of the Stark broadening ► Impossibility of simultaneous diagnostic of gas temperature and electron density

  12. Effect of barrier height and indium composition on the internal quantum efficiency of (In)AlGaN multiple quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Ledentsov, Nikolay Jr.; Reich, Christoph; Mehnke, Frank; Kuhn, Christian; Wernicke, Tim; Kolbe, Tim; Lobo Ploch, Neysha; Rass, Jens [Institute of Solid State Physics, Technische Universitaet Berlin (Germany); Kueller, Viola [Ferdinand-Braun-Institut, Berlin (Germany); Kneissl, Michael [Institute of Solid State Physics, Technische Universitaet Berlin (Germany); Ferdinand-Braun-Institut, Berlin (Germany)

    2013-07-01

    We studied (In)AlGaN multiple quantum wells (MQWs) emitting in the UV-B spectral region with photoluminescence and electroluminescence spectroscopy. The internal quantum efficiency (IQE) was determined by temperature dependent measurements (5 K-300 K). The quantum confined Stark effect (QCSE) was investigated by studying the shift of the emission energy with increasing excitation power density. In the first series, Al{sub 0.27}Ga{sub 0.73}N MQWs with different Al{sub x}Ga{sub 1-x}N barriers (0.32

  13. Stark mapping of H2 Rydberg states in the strong-field regime with dynamical resolution

    International Nuclear Information System (INIS)

    Glab, W.L.; Qin, K.

    1993-01-01

    We have acquired spectra of high Rydberg states of molecular hydrogen in a static external field, in the energy region from below the energy at which field ionization becomes classically possible (E c ) to well above this energy. Simultaneous spectra of ionization and dissociation were acquired, thereby allowing direct information on the excited-state decay dynamics to be obtained. We have found that states with energies below E c undergo field-induced predissociation, while states with energies well above E c decay predominantly by field ionization. Field ionization and dissociation compete effectively as decay channels for states with energies in a restricted region just above E c . Comparison of our ionization spectra to the results of a single-channel quantum-defect theory Stark calculation shows quantitative agreement except near curve crossings, indicating that inclusion of different core rotational state channels will be required to properly account for coupling between the Stark states. Several states in the spectra undergo pronounced changes in their dynamical properties over a narrow range of field values, which we interpret as being due to interference cancellation of the ionization rates for these states

  14. Stark Broadening of Carbon and Oxygen Lines in Hot DQ White Dwarf Stars: Recent Results and Applications

    Directory of Open Access Journals (Sweden)

    Dufour P.

    2011-12-01

    Full Text Available White dwarf stars are traditionally found to have surface compositions made primarily of hydrogen or helium. However, a new family has recently been uncovered, the so-called hot DQ white dwarfs, which have surface compositions dominated by carbon and oxygen with little or no trace of hydrogen and helium (Dufour et al. 2007, 2008, 2010. Deriving precise atmospheric parameters for these objects (such as the effective temperature and the surface gravity requires detailed modeling of spectral line profiles. Stark broadening parameters are of crucial importance in that context. We present preliminary results from our new generation of model atmospheres including the latest Stark broadening calculations for C II lines and discuss the implications as well as future work that remains to be done.

  15. Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Thompson, M.G.; Marinelli, C.; Chu, Y.

    Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.......Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance....

  16. Stark parameters of some asymmetrical Si II lines

    International Nuclear Information System (INIS)

    Ferhat, B; Azzouz, Y; Redon, R; Ripert, M; Lesage, A

    2012-01-01

    Six lines of SiII are experimentally studied in pulsed plasma generated by Nd :Yag laser breakdown on pure solid silicon target. A set of experimental Stark parameters of asymmetrical lines are measured in temperature range from 14 000 K to 18 000 K (using Boltzmann plot). Calculated values of the electron density (using Griem's formula) vary from 1.7 to 6.1 × 10 23 m −3 . Processed spectral lines are 333.982 nm (3s 2 4p -3s 2 6s) and 397.746 nm, 399.177 nm, 399.801 nm, 401.622 nm (3d' 2 F 0 -4f' 4 G) and (3d' 2 F 0 - 4f' 2 G) of astrophysical interest. Asymmetrical line shapes are synthesized by a sum of two semi-Lorentzian distributions. The obtained fit is in good agreement with the measured spectra.

  17. Raman-laser spectroscopy of Wannier-Stark states

    International Nuclear Information System (INIS)

    Tackmann, G.; Pelle, B.; Hilico, A.; Beaufils, Q.; Pereira dos Santos, F.

    2011-01-01

    Raman lasers are used as a spectroscopic probe of the state of atoms confined in a shallow one-dimensional (1D) vertical lattice. For sufficiently long laser pulses, resolved transitions in the bottom band of the lattice between Wannier Stark states corresponding to neighboring wells are observed. Couplings between such states are measured as a function of the lattice laser intensity and compared to theoretical predictions, from which the lattice depth can be extracted. Limits to the linewidth of these transitions are investigated. Transitions to higher bands can also be induced, as well as between transverse states for tilted Raman beams. All these features allow for a precise characterization of the trapping potential and for an efficient control of the atomic external degrees of freedom.

  18. Implementation of quantum logic gates via Stark-tuned Förster resonance in Rydberg atoms

    Science.gov (United States)

    Huang, Xi-Rong; Hu, Chang-Sheng; Shen, Li-Tuo; Yang, Zhen-Biao; Wu, Huai-Zhi

    2018-02-01

    We present a scheme for implementation of controlled-Z and controlled-NOT gates via rapid adiabatic passage and Stark-tuned Förster resonance. By sweeping the Förster resonance once without passing through it and adiabatically tuning the angle-dependent Rydberg-Rydberg interaction of the dipolar nature, the system can be effectively described by a two-level system with the adiabatic theorem. The single adiabatic passage leads to a gate fidelity as high as 0.999 and a greatly reduced gate operation time. We investigate the scheme by considering an actual atomic level configuration with rubidium atoms, where the fidelity of the controlled-Z gate is still higher than 0.99 under the influence of the Zeeman effect.

  19. Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

    OpenAIRE

    Yudi Darma

    2008-01-01

    Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter) have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD) on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of ...

  20. Stark broadening of the 1640- and 4686-A lines of ionized helium

    International Nuclear Information System (INIS)

    Greene, R.L.

    1976-01-01

    The Stark-broadened profiles of the 1640- and 4686-A lines of ionized helium have been calculated using an approximation to the electron broadening operator in the unified classical-path theory of Smith, Vidal, and Cooper. The approximation is such that the results reproduce the time-ordered impact-theory results in the line center, and the ionized-radiator quasistatic results in the far wings. Sample calculations at n/sub e/ = 10/sup 17/ cm/sup -3/ and T = 40 000 degreeK are found to give significantly more narrow profiles than the corresponding modified-impact-theory results because of a different treatment of the lower-state interaction. Indirect comparison with experiment indicates that the calculated lines are too narrow, but it is expected that the inclusion of neglected effects of ion dynamics and inelastic collisions would improve agreement

  1. Quality Of Starking Apples After Exposure To Gamma Radiation As A Quarantine Treatment

    International Nuclear Information System (INIS)

    Mansour, M.; Mohamad, F.; Al-Bachir, M.

    2004-01-01

    Starking apples approaching physiological maturity were exposed, immediately after harvest, to gamma radiation doses ranging from 100 to 400 Gy. The irradiated fruit were stored for six months in a cold storage facility at 1±1 deg. C and 90±5 % RH. Effects of gamma radiation on weight loss, fruit firmness, pH of fruit juice, fruit taste, color and visible injuries were evaluated. The results showed that gamma irradiation increased weight loss, particularly in the first 45 days of storage. Doses higher than 200 Gy, on the other hand, reduced apple firmness after 45 days of storage while a 400 Gy dose decreased fruit pH immediately after irradiation. (Authors)

  2. Stark tuning and electrical charge state control of single divacancies in silicon carbide

    Science.gov (United States)

    de las Casas, Charles F.; Christle, David J.; Ul Hassan, Jawad; Ohshima, Takeshi; Son, Nguyen T.; Awschalom, David D.

    2017-12-01

    Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with existing fiber optic networks. However, local strain inhomogeneity can randomly perturb their optical transition frequencies, which degrades the indistinguishability of photons emitted from separate defects and hinders their coupling to optical cavities. Here, we show that electric fields can be used to tune the optical transition frequencies of single neutral divacancy defects in 4H-SiC over a range of several GHz via the DC Stark effect. The same technique can also control the charge state of the defect on microsecond timescales, which we use to stabilize unstable or non-neutral divacancies into their neutral charge state. Using fluorescence-based charge state detection, we show that both 975 nm and 1130 nm excitation can prepare their neutral charge state with near unity efficiency.

  3. Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain); Palomares, A. [Departamento de Matemática Aplicada, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain); Alper, C.; Ionescu, A. M. [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain)

    2016-01-28

    In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron–hole bilayer tunnel field-effect transistor. We show that, analogously to the explicit formula for the tunneling distance that can be easily obtained in the semiclassical framework where the conduction and valence band edges are allowed states, an equivalent analytical expression can be derived in the presence of field-induced quantum confinement for describing the dependence of the tunneling distance on the body thickness and material properties of the channel. This explicit expression accounting for quantum confinement holds valid provided that the potential wells for electrons and holes at the top and bottom of the channel can be approximated by triangular profiles. Analytical predictions are compared to simulation results showing very accurate agreement.

  4. Modified dynamic Stark shift and depopulation rate of an atom inside a Kerr nonlinear blackbody

    International Nuclear Information System (INIS)

    Yin Miao; Cheng Ze

    2009-01-01

    We investigate the dynamic Stark shift and atomic depopulation rate induced by real photons in a Kerr nonlinear blackbody. We found that the dynamic Stark shift and atomic depopulation rate are equally modified by a nonlinear contribution factor and a linear contribution factor under a transition temperature T c . The nonlinear contribution factor depends on the Kerr nonlinear coefficient as well as the absolute temperature. Below T c , the absolute values of the dynamic Stark shift and depopulation rate of a single atomic state (not the ground state) are correspondingly larger than those in a normal blackbody whose interior is filled with a nonabsorbing linear medium. Above T c , the dynamic Stark shift and atomic depopulation rate are correspondingly equal to those in a normal blackbody with a nonabsorbing linear medium in its interior.

  5. Stark width regularities within spectral series of the lithium isoelectronic sequence

    Science.gov (United States)

    Tapalaga, Irinel; Trklja, Nora; Dojčinović, Ivan P.; Purić, Jagoš

    2018-03-01

    Stark width regularities within spectral series of the lithium isoelectronic sequence have been studied in an approach that includes both neutrals and ions. The influence of environmental conditions and certain atomic parameters on the Stark widths of spectral lines has been investigated. This study gives a simple model for the calculation of Stark broadening data for spectral lines within the lithium isoelectronic sequence. The proposed model requires fewer parameters than any other model. The obtained relations were used for predictions of Stark widths for transitions that have not yet been measured or calculated. In the framework of the present research, three algorithms for fast data processing have been made and they enable quality control and provide verification of the theoretically calculated results.

  6. Surface Acoustic Analog of Bloch Oscillations, Wannier-Stark Ladders and Landau-Zener Tunneling

    Science.gov (United States)

    de Lima, M. M.; Kosevich, Yu. A.; Santos, P. V.; Cantarero, A.

    2011-12-01

    In this contribution, we discuss the recent experimental demonstration of Wannier-Stark ladders, Bloch Oscillations and Landau Zener tunneling in a solid by means of surface acoustic waves propagating through perturbed grating structures.

  7. Regularities And Irregularities Of The Stark Parameters For Single Ionized Noble Gases

    Science.gov (United States)

    Peláez, R. J.; Djurovic, S.; Cirišan, M.; Aparicio, J. A.; Mar S.

    2010-07-01

    Spectroscopy of ionized noble gases has a great importance for the laboratory and astrophysical plasmas. Generally, spectra of inert gases are important for many physics areas, for example laser physics, fusion diagnostics, photoelectron spectroscopy, collision physics, astrophysics etc. Stark halfwidths as well as shifts of spectral lines are usually employed for plasma diagnostic purposes. For example atomic data of argon krypton and xenon will be useful for the spectral diagnostic of ITER. In addition, the software used for stellar atmosphere simulation like TMAP, and SMART require a large amount of atomic and spectroscopic data. Availability of these parameters will be useful for a further development of stellar atmosphere and evolution models. Stark parameters data of spectral lines can also be useful for verification of theoretical calculations and investigation of regularities and systematic trends of these parameters within a multiplet, supermultiplet or transition array. In the last years, different trends and regularities of Stark parameters (halwidths and shifts of spectral lines) have been analyzed. The conditions related with atomic structure of the element as well as plasma conditions are responsible for regular or irregular behaviors of the Stark parameters. The absence of very close perturbing levels makes Ne II as a good candidate for analysis of the regularities. Other two considered elements Kr II and Xe II with complex spectra present strong perturbations and in some cases an irregularities in Stark parameters appear. In this work we analyze the influence of the perturbations to Stark parameters within the multiplets.

  8. Stark interaction of identical particles with the vacuum electromagnetic field as quantum Poisson process suppressing collective spontaneous emission

    International Nuclear Information System (INIS)

    Basharov, A. M.

    2011-01-01

    The effective Hamiltonian describing resonant interaction of an ensemble of identical quantum particles with a photon-free vacuum electromagnetic field has been obtained with allowance for terms of second order in the coupling constant (the Stark interaction) by means of the perturbation theory on the basis of the unitary transformation of the system quantum state. It has been shown that in the Markov approximation the effective Hamiltonian terms of first order in the coupling constant are represented by the quantum Wiener process, whereas terms of second order are expressed by the quantum Poisson process. During the course of the investigation, it was established that the Stark interaction played a significant role in the ensemble dynamics, thus influencing the collective spontaneous decay of the ensemble of an appreciably high number of identical particles. Fundamental effects have been discovered, i.e., the excitation conservation in a sufficiently dense ensemble of identical particles and superradiance suppression in the collective decaying process of an excited ensemble with a determined number of particles.

  9. Quantum confinement-tunable ultrafast charge transfer at the PbS quantum dot and phenyl-C61-butyric acid methyl ester interface

    KAUST Repository

    El-Ballouli, AlA'A O.; Alarousu, Erkki Antero; Bernardi, Marco; Aly, Shawkat Mohammede; Lagrow, Alec P.; Bakr, Osman; Mohammed, Omar F.

    2014-01-01

    Quantum dot (QD) solar cells have emerged as promising low-cost alternatives to existing photovoltaic technologies. Here, we investigate charge transfer and separation at PbS QDs and phenyl-C61-butyric acid methyl ester (PCBM) interfaces using a combination of femtosecond broadband transient absorption (TA) spectroscopy and steady-state photoluminescence quenching measurements. We analyzed ultrafast electron injection and charge separation at PbS QD/PCBM interfaces for four different QD sizes and as a function of PCBM concentration. The results reveal that the energy band alignment, tuned by the quantum size effect, is the key element for efficient electron injection and charge separation processes. More specifically, the steady-state and time-resolved data demonstrate that only small-sized PbS QDs with a bandgap larger than 1 eV can transfer electrons to PCBM upon light absorption. We show that these trends result from the formation of a type-II interface band alignment, as a consequence of the size distribution of the QDs. Transient absorption data indicate that electron injection from photoexcited PbS QDs to PCBM occurs within our temporal resolution of 120 fs for QDs with bandgaps that achieve type-II alignment, while virtually all signals observed in smaller bandgap QD samples result from large bandgap outliers in the size distribution. Taken together, our results clearly demonstrate that charge transfer rates at QD interfaces can be tuned by several orders of magnitude by engineering the QD size distribution. The work presented here will advance both the design and the understanding of QD interfaces for solar energy conversion. © 2014 American Chemical Society.

  10. Quantum confinement-tunable ultrafast charge transfer at the PbS quantum dot and phenyl-C61-butyric acid methyl ester interface

    KAUST Repository

    El-Ballouli, AlA'A O.

    2014-05-14

    Quantum dot (QD) solar cells have emerged as promising low-cost alternatives to existing photovoltaic technologies. Here, we investigate charge transfer and separation at PbS QDs and phenyl-C61-butyric acid methyl ester (PCBM) interfaces using a combination of femtosecond broadband transient absorption (TA) spectroscopy and steady-state photoluminescence quenching measurements. We analyzed ultrafast electron injection and charge separation at PbS QD/PCBM interfaces for four different QD sizes and as a function of PCBM concentration. The results reveal that the energy band alignment, tuned by the quantum size effect, is the key element for efficient electron injection and charge separation processes. More specifically, the steady-state and time-resolved data demonstrate that only small-sized PbS QDs with a bandgap larger than 1 eV can transfer electrons to PCBM upon light absorption. We show that these trends result from the formation of a type-II interface band alignment, as a consequence of the size distribution of the QDs. Transient absorption data indicate that electron injection from photoexcited PbS QDs to PCBM occurs within our temporal resolution of 120 fs for QDs with bandgaps that achieve type-II alignment, while virtually all signals observed in smaller bandgap QD samples result from large bandgap outliers in the size distribution. Taken together, our results clearly demonstrate that charge transfer rates at QD interfaces can be tuned by several orders of magnitude by engineering the QD size distribution. The work presented here will advance both the design and the understanding of QD interfaces for solar energy conversion. © 2014 American Chemical Society.

  11. Molecular quantum mechanical gradients within the polarizable embedding approach—Application to the internal vibrational Stark shift of acetophenone

    Energy Technology Data Exchange (ETDEWEB)

    List, Nanna Holmgaard, E-mail: nhl@sdu.dk; Jensen, Hans Jørgen Aagaard; Kongsted, Jacob [Department of Physics, Chemistry and Pharmacy, University of Southern Denmark, Campusvej 55, Odense M, Odense DK-5230 Denmark (Denmark); Beerepoot, Maarten T. P.; Gao, Bin; Ruud, Kenneth [Centre for Theoretical and Computational Chemistry, Department of Chemistry, University of Tromsø–The Arctic University of Norway, N-9037 Tromsø (Norway); Olsen, Jógvan Magnus Haugaard [Department of Physics, Chemistry and Pharmacy, University of Southern Denmark, Campusvej 55, Odense M, Odense DK-5230 Denmark (Denmark); Laboratory of Computational Chemistry and Biochemistry, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne (Switzerland)

    2015-01-21

    We present an implementation of analytical quantum mechanical molecular gradients within the polarizable embedding (PE) model to allow for efficient geometry optimizations and vibrational analysis of molecules embedded in large, geometrically frozen environments. We consider a variational ansatz for the quantum region, covering (multiconfigurational) self-consistent-field and Kohn–Sham density functional theory. As the first application of the implementation, we consider the internal vibrational Stark effect of the C=O group of acetophenone in different solvents and derive its vibrational linear Stark tuning rate using harmonic frequencies calculated from analytical gradients and computed local electric fields. Comparisons to PE calculations employing an enlarged quantum region as well as to a non-polarizable embedding scheme show that the inclusion of mutual polarization between acetophenone and water is essential in order to capture the structural modifications and the associated frequency shifts observed in water. For more apolar solvents, a proper description of dispersion and exchange–repulsion becomes increasingly important, and the quality of the optimized structures relies to a larger extent on the quality of the Lennard-Jones parameters.

  12. Molecular quantum mechanical gradients within the polarizable embedding approach—Application to the internal vibrational Stark shift of acetophenone

    International Nuclear Information System (INIS)

    List, Nanna Holmgaard; Jensen, Hans Jørgen Aagaard; Kongsted, Jacob; Beerepoot, Maarten T. P.; Gao, Bin; Ruud, Kenneth; Olsen, Jógvan Magnus Haugaard

    2015-01-01

    We present an implementation of analytical quantum mechanical molecular gradients within the polarizable embedding (PE) model to allow for efficient geometry optimizations and vibrational analysis of molecules embedded in large, geometrically frozen environments. We consider a variational ansatz for the quantum region, covering (multiconfigurational) self-consistent-field and Kohn–Sham density functional theory. As the first application of the implementation, we consider the internal vibrational Stark effect of the C=O group of acetophenone in different solvents and derive its vibrational linear Stark tuning rate using harmonic frequencies calculated from analytical gradients and computed local electric fields. Comparisons to PE calculations employing an enlarged quantum region as well as to a non-polarizable embedding scheme show that the inclusion of mutual polarization between acetophenone and water is essential in order to capture the structural modifications and the associated frequency shifts observed in water. For more apolar solvents, a proper description of dispersion and exchange–repulsion becomes increasingly important, and the quality of the optimized structures relies to a larger extent on the quality of the Lennard-Jones parameters

  13. Multiple Temperature-Sensing Behavior of Green and Red Upconversion Emissions from Stark Sublevels of Er3+

    Directory of Open Access Journals (Sweden)

    Baosheng Cao

    2015-12-01

    Full Text Available Upconversion luminescence properties from the emissions of Stark sublevels of Er3+ were investigated in Er3+-Yb3+-Mo6+-codoped TiO2 phosphors in this study. According to the energy levels split from Er3+, green and red emissions from the transitions of four coupled energy levels, 2H11/2(I/2H11/2(II, 4S3/2(I/4S3/2(II, 4F9/2(I/4F9/2(II, and 2H11/2(I + 2H11/2(II/4S3/2(I + 4S3/2(II, were observed under 976 nm laser diode excitation. By utilizing the fluorescence intensity ratio (FIR technique, temperature-dependent upconversion emissions from these four coupled energy levels were analyzed at length. The optical temperature-sensing behaviors of sensing sensitivity, measurement error, and operating temperature for the four coupled energy levels are discussed, all of which are closely related to the energy gap of the coupled energy levels, FIR value, and luminescence intensity. Experimental results suggest that Er3+-Yb3+-Mo6+-codoped TiO2 phosphor with four pairs of energy levels coupled by Stark sublevels provides a new and effective route to realize multiple optical temperature-sensing through a wide range of temperatures in an independent system.

  14. Stark shifts and widths of a hydrogen atom in Debye plasmas

    International Nuclear Information System (INIS)

    Yu, A.C.H.; Ho, Y.K.

    2005-01-01

    A computational scheme has been developed and used to investigate the influence of the plasma environments on modified atomic autoionization for isolated atoms/ions by using the complex coordinate rotation method which is proved to be a very simple and powerful tool to analyze the position and the width of a resonance. The Debye screening potential is employed to describe the effects of the plasma environments. Stark shifts and widths on the ground state of hydrogen are reported for field strength up to F=0.12 a.u. Slater-type basis wave functions are used to describe the system and angular-momentum states up to L=11 are included when the external electric field is turned on. Converged results are obtained by using different maximum angular-momentum states. The modified autoionization for various Debye lengths ranging from infinite to a small value of 0.86 are reported. It has been observed that for a given temperature and under the influence of a given external electric field, the resonance energy and the autoionization width increase for increasing electron density in the plasma. A discussion on the physical implication of our results is made

  15. Theory of coherent Stark nonlinear spectroscopy in a three-level system

    International Nuclear Information System (INIS)

    Loiko, Yurii; Serrat, Carles

    2007-01-01

    Coherent Stark nonlinear spectroscopy (CSNS) is a spectroscopic tool based on the cancellation of the phase sensitivity at frequency 5ω in the ultrafast four-wave mixing (FWM) of two-color pulses with frequencies ω and 3ω. We develop a theory for CSNS in three-level V-type systems, and reveal that the mechanism for the phase sensitivity at 5ω is the quantum interference between the two primary paths in the FWM of the ω and 3ω fields. We find that the cancellation phenomenon occurs when the probability amplitude of one of these two primary pathways becomes equal to zero due to the competition effect between the two allowed transitions in the V-type system. The analytical expressions that describe the phase-sensitivity phenomenon and the conditions for its cancellation have been derived on the basis of perturbation theory, and are confirmed by numerical integration of the density matrix and Maxwell equations. We argue that CSNS can be utilized, in particular, for the investigation of optically dense media

  16. Fractional Stark state selective electric field ionization of very high-n Rydberg states of molecules

    International Nuclear Information System (INIS)

    Dietrich, H.; Mueller-Dethlefs, K.; Baranov, L.Y.

    1996-01-01

    For the first time fractional Stark state selective electric field ionization of very high-n (n approx-gt 250) molecular Rydberg states is observed. An open-quote open-quote offset close-quote close-quote electric pulse selectively ionizes the more fragile open-quote open-quote red close-quote close-quote (down shifted in energy) Stark states. The more resilient open-quote open-quote bluer close-quote close-quote, or up-shifted, ones survive and are shifted down in energy upon application of a second (open-quote open-quote probe close-quote close-quote) pulse of opposite direction (diabatic Stark states close-quote inversion). Hence, even for smaller probe than offset fields ionization is observed. The offset/probe ratio allows one to control spectral peak shapes in zero-kinetic-energy photoelectron spectroscopy. copyright 1995 The American Physical Society

  17. A new questionnaire for measuring quality of life - the Stark QoL.

    Science.gov (United States)

    Hardt, Jochen

    2015-10-26

    The Stark questionnaire measures health-related quality of life (QoL) using pictures almost exclusively. It is supplemented by a minimum of words. It comprises a mental and a physical health component. A German sample of n = 500 subjects, age and gender stratified, filled out the Stark Qol questionnaire along with various other questionnaires via internet. The physical component shows good reliability (Cronbach's alpha = McDonalds Omega = greatest lower bound = .93), the mental component can be improved (Cronbach's alpha = .63, McDonalds Omega = .72, greatest lower bound = .77). Confirmatory factor analysis shows a good fit (Bentlers CFI = .97). Construct validity was proven. The Stark QoL is a promising new development in measuring QoL, it is a short and easy to apply questionnaire. Additionally, it is particularly promising for international research.

  18. Wave-function analysis of dynamic cancellation of ac Stark shifts in optical lattice clocks by use of pulsed Raman and electromagnetically-induced-transparency techniques

    International Nuclear Information System (INIS)

    Yoon, Tai Hyun

    2007-01-01

    We study analytically the dynamic cancellation of ac Stark shift in the recently proposed pulsed electromagnetically-induced-transparency (EIT-)Raman optical lattice clock based on the wave-function formalism. An explicit expression for the time evolution operator corresponding to the effective two-level interaction Hamiltonian has been obtained in order to explain the atomic phase shift cancellation due to the ac Stark shift induced by the time-separated laser pulses. We present how to determine an optimum value of the common detuning of the driving fields at which the atomic phase shift cancels completely with the parameters for the practical realization of the EIT-Raman optical lattice clock with alkaline-earth-metal atoms

  19. Experimental evidence in favour of the Stark mixing of atomic L-subshell states in the boron impact of Au and Bi

    International Nuclear Information System (INIS)

    Padhi, H.C.; Dhal, B.B.; Nandi, T.; Trautmann, D.

    1995-01-01

    L-subshell ionization of Au and Bi induced by boron impact has been investigated for impact energies ranging from 0.48 to 0.88 MeV/μ. The energy dependence of the measured ionization cross section shows, for the first time, a plateau structure for all three subshells. The plateau structure revealed by previous data for proton and helium impact was for the L 1 subshell only and this had been attributed to the bimodal nature of the 2s electron density. The observed plateau structure for all the three subshells and its occurrence at a somewhat lower energy signifies a considerable amount of Stark mixing of target 2s and 2p atomic wavefunctions. Fresh calculations incorporating the Stark mixing effect in target atomic wavefunctions are necessary to improve agreement with the present data. The existing theories, however, are found to be inadequate. (author)

  20. Stark shift measurements of Xe II and Xe III spectral lines

    International Nuclear Information System (INIS)

    Cirisan, M; Pelaez, R J; Djurovic, S; Aparicio, J A; Mar, S

    2007-01-01

    Stark shift measurements of singly and doubly ionized Xe spectral lines are presented in this paper. Shifts of 110 Xe II lines and 42 Xe III lines are reported, including a significant number of new results. A low-pressure-pulsed arc with 95% of He and 5% of Xe was used as a plasma source. All measurements were performed under the following plasma conditions: electron density (0.2-1.4) x 10 23 m -3 and electron temperature 18 000-23 000 K. The measured Stark shifts are compared with other experimental and theoretical data

  1. A Riemann-Hilbert approach to the inverse problem for the Stark operator on the line

    Science.gov (United States)

    Its, A.; Sukhanov, V.

    2016-05-01

    The paper is concerned with the inverse scattering problem for the Stark operator on the line with a potential from the Schwartz class. In our study of the inverse problem, we use the Riemann-Hilbert formalism. This allows us to overcome the principal technical difficulties which arise in the more traditional approaches based on the Gel’fand-Levitan-Marchenko equations, and indeed solve the problem. We also produce a complete description of the relevant scattering data (which have not been obtained in the previous works on the Stark operator) and establish the bijection between the Schwartz class potentials and the scattering data.

  2. A Stark-tuned, far-infrared laser for high frequency plasma diagnostics

    International Nuclear Information System (INIS)

    Mansfield, D.K.; Vocaturo, M.; Guttadora, L.; Rockmore, M.; Micai, K.; Krug, P.A.

    1992-03-01

    A Stark-tuned optically pumped far-infrared methanol laser operating at 119 micrometers has been built. The laser is designed to operate at high power while exhibiting a well-separated Stark doublet. At a pump power of 65 Watts and electric field of 1 kV/cm the laser has delivered over 100 mW c.w. while exhibiting a frequency splitting of 34 MHz. These parameters indicate that this laser would be suitable for use in the present generation of modulated interferometers on large thermonuclear plasma devices. The achieved modulation frequency is more than an order of magnitude higher than could be achieved using standard techniques

  3. Stark broadening of resonant Cr II 3d5-3d44p spectral lines in hot stellar atmospheres

    Science.gov (United States)

    Simić, Z.; Dimitrijević, M. S.; Sahal-Bréchot, S.

    2013-07-01

    New Stark broadening parameters of interest for the astrophysical, laboratory and technological plasma modelling, investigations and analysis for nine resonant Cr II multiplets have been determined within the semiclassical perturbation approach. In order to demonstrate one possibility for their usage in astrophysical plasma research, obtained results have been applied to the analysis of the Stark broadening influence on stellar spectral line shapes.

  4. FOCUSED FEASIBILITY STUDY OF PHYTOREMEDIATION ALTERNATIVE FOR THE INDUSTRIAL EXCESS LANDFILL SITE IN STARK COUNTY, OHIO.

    Science.gov (United States)

    Focused feasibility study of phytoremediation alternative for the Industrial Excess Landfill site in Stark County, Ohio. More information can be found on the NPL Fact Sheet for this site at www.epa.gov/region5/superfund/npl/ohio/OHD000377971.htm

  5. The influence of static fields on the dynamic Stark spectra of hydrogen Balmer lines

    International Nuclear Information System (INIS)

    Janssen, G.C.A.M.; Jayakumar, R.; Granneman, E.H.A.

    1981-01-01

    In plasmas atomic-line radiation is influenced by static and high frequency fields. A simple method of calculating the Stark profiles of the Balmer α and β lines for the case of one-dimensional fields is discussed. Using a Holtsmark field for the static component, the resulting profile of Balmer α shows a splitting of the satellites. (author)

  6. Developmental characters of Pseitina iijimae (Jordan and Starks), bothid flat fishes- pisces

    Digital Repository Service at National Institute of Oceanography (India)

    Devi, C.B.L.

    Post larval stages of Psettina iQimae (Jordan and Starks) ranging from 1.8 mm NL to 44.6 mm SL collected during Naga Expedition and International Indian Ocean Expedition (JIOE) are described The characteristics which help to identify larval stages...

  7. An expanded genetic code for probing the role of electrostatics in enzyme catalysis by vibrational Stark spectroscopy.

    Science.gov (United States)

    Völler, Jan-Stefan; Biava, Hernan; Hildebrandt, Peter; Budisa, Nediljko

    2017-11-01

    To find experimental validation for electrostatic interactions essential for catalytic reactions represents a challenge due to practical limitations in assessing electric fields within protein structures. This review examines the applications of non-canonical amino acids (ncAAs) as genetically encoded probes for studying the role of electrostatic interactions in enzyme catalysis. ncAAs constitute sensitive spectroscopic probes to detect local electric fields by exploiting the vibrational Stark effect (VSE) and thus have the potential to map the protein electrostatics. Mapping the electrostatics in proteins will improve our understanding of natural catalytic processes and, in beyond, will be helpful for biocatalyst engineering. This article is part of a Special Issue entitled "Biochemistry of Synthetic Biology - Recent Developments" Guest Editor: Dr. Ilka Heinemann and Dr. Patrick O'Donoghue. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Case studies on recent Stark broadening calculations and STARK-B database development in the framework of the European project VAMDC (Virtual Atomic and Molecular Data Center)

    International Nuclear Information System (INIS)

    Sahal-Brechot, S

    2010-01-01

    Stark broadening theories and calculations have been extensively developed for about 50 years. The theory can now be considered as mature for many applications, especially for accurate spectroscopic diagnostics and modelling. In astrophysics, with the increasing sensitivity of observations and spectral resolution, in all domains of wavelengths from far UV to infrared, it has become possible to develop realistic models of interiors and atmospheres of stars and interpret their evolution and the creation of elements through nuclear reactions. For hot stars, especially white dwarfs, Stark broadening is the dominant collisional line broadening process. This requires the knowledge of numerous profiles, especially for trace elements, which are used as useful probes for modern spectroscopic diagnostics. Hence, calculations based on a simple but enough accurate and fast method, are necessary for obtaining numerous results. Ab initio calculations are a growing domain of development. Nowadays, the access to such data via an on line database becomes crucial. This is the object of STARK-B, which is a collaborative project between the Paris Observatory and the Astronomical Observatory of Belgrade. It is a database of calculated widths and shifts of isolated lines of atoms and ions due to electron and ion collisions. It is devoted to modelling and spectroscopic diagnostics of stellar atmospheres and envelopes. In addition, it is relevant to laboratory plasmas, laser equipments and technological plasmas. It is a part of VAMDC (Virtual Atomic and Molecular Data Centre), which is an European Union funded collaboration between groups involved in the generation and use of atomic and molecular data.

  9. Experimental determination of the Stark broadening of Cu I spectral lines in a plasma of a capillary discharge

    International Nuclear Information System (INIS)

    Sandolache, G.; Zoita, V.; Bauchire, M.; Le Menn, E.; Gentils, F.; Fleurier, C.

    2001-01-01

    Copper lines are frequently observed in various types of plasma device and industrial plasmas and then it is desirable to develop methods of plasma diagnostics using the emission spectrum of copper lines. The aim of this work is to create a database for the neutral copper spectral lines directly usable for the diagnostic of plasmas with metal vapors. An experimental device has been developed to create a metal plasma having the required metrological properties to facilitate the spectroscopic measurements. A capillary discharge technique has been used to create a plasma jet representing a radially symmetric light source. The copper-hydrogen plasma jet was produced by the ablation of the capillary wall consisting of a copper-embedded elastomer. The plasma jet was observed side-on using the high-resolution spectrometers equipped with ICCD detectors. The 2D square matrix ICCD detectors have permitted the observation of cross sections of the plasma jet. The high-speed time resolved camera equipped with interference filters has been used to check the cylindrical shape and the homogeneity of the plasma jet. The electron density of the plasma jet was obtained by using the H α spectral line of the hydrogen component plasma. The temperature was determined by applying the relative intensity method to the measured intensities of the neutral copper spectral lines emitted by the plasma jet. The hydrogen and copper lines were broadened principally by the Stark effect. The measured temperatures were about 15,000 K and the electron density of about 2x10 17 cm -3 . The results of the Stark broadening of the neutral cooper concerned particularly the lines 453.9 nm, 465.1 nm, 515.3 nm and 529.2 nm. (authors)

  10. Trends with coverage and pH in Stark tuning rates for CO on Pt(1 1 1) electrodes

    International Nuclear Information System (INIS)

    Uddin, Jamal; Anderson, Alfred B.

    2013-01-01

    The general understanding of so-called electrochemical Stark tuning rates, that is, the potential dependence of vibrational frequency of CO adsorbed on Pt(1 1 1), has developed over the past thirty years in terms of two semiempirical models. The first is the Fermi level shift model used in non-self-consistent-field one-electron molecular orbital theory. This approach has provided qualitative understanding in terms of Fermi level-dependent variations in σ and π orbital bonding between CO and the electrode surface atoms. The second is the use of self-consistent-field theory with surface charging to create adjustable electric fields. Adsorbed CO then reacts to the field in a classical Stark effect with some small uncharacterized Fermi level shift superimposed. It is now possible, using two-dimensional density functional theory, including electrolyte polarization from surface charging, and the dielectric continuum to approximate solvation energy, to calculate the tuning rate in response to shifts in the Fermi level and electrode potential caused by changing the surface charge density. Here we apply this first principles method to calculate trends in the tuning rate for CO adsorbed on 1-fold Pt(1 1 1) sites with changes in CO(ads) coverage and with changes in electrolyte pH. The tuning rate is calculated to decrease as the coverage is increased and, for high coverage, to increase as the pH is increased. These trends are shown to be in qualitative agreement with the very little existing experimental data for these trends

  11. Can the Stark-Einstein law resolve the measurement problem from an animate perspective?

    Science.gov (United States)

    Thaheld, Fred H

    2015-09-01

    Analysis of the Stark-Einstein law as it applies to the retinal molecule, which is part of the rhodopsin molecule within the rod cells of the retina, reveals that it may provide the solution to the measurement problem from an animate perspective. That it represents a natural boundary where the Schrödinger equation or wave function automatically goes from linear to nonlinear while remaining in a deterministic state. It will be possible in the near future to subject this theory to empirical tests as has been previously proposed. This analysis provides a contrast to the many decades well studied and debated inanimate measurement problem and would represent an addition to the Stark-Einstein law involving information carried by the photon. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

  12. Stark broadening in hot, dense laser-produced plasmas

    International Nuclear Information System (INIS)

    Tighe, R.J.; Hooper, C.F. Jr.

    1976-01-01

    Broadened Lyman-α x-ray lines from neon X and argon XVIII radiators, which are immersed in a hot, dense deuterium or deuterium-tritium plasma, are discussed. In particular, these lines are analyzed for several temperature-density cases, characteristic of laser-produced plasmas; special attention paid to the relative importance of ion, electron, and Doppler effects. Static ion microfield distribution functions are tabulated

  13. Observation of asymmetric Stark profiles from plasmas created by a picosecond KrF laser

    International Nuclear Information System (INIS)

    Nam, C.H.; Tighe, W.; Suckewer, S.; Seely, J.F.; Feldman, U.; Woltz, L.A.

    1987-10-01

    High-resolution extreme ultraviolet (XUV) spectra from solid targets irradiated by a picosecond KrF* laser focused to 10 16 W/cm 2 have been recorded. The line profiles of transitions in Li-like fluorine and oxygen are asymmetric and up to 2 A in width. Calculations indicate the presence of transitions of the type 2p-3p and other forbidden Stark components. 11 refs., 6 figs

  14. Observation of interference between stark and electric quadrupole transitions in LIF from He atoms in plasmas

    International Nuclear Information System (INIS)

    Takiyama, K.; Namba, S.; Furukawa, S.; Oda, T.; James, B.W.; Andruczyk, D.

    2004-01-01

    Interference between Stark-induced dipole and electric quadrupole amplitudes was observed in a He hollow cathode plasma with axial magnetic field perpendicular to the sheath electric field E by laser-induced fluorescence (LIF) method. Circularly polarized LIF signals were observed in the sheath region. Spatial profile of the degree of polarization P c showed characteristic features of the interference. Using theoretically calculated P c -E relationship, E-profile was successfully obtained form the measure P c . (author)

  15. Stark broadening of potassium ns-4p and nd-4p lines in a wall-stabilized arc

    International Nuclear Information System (INIS)

    Hohimer, J.P.

    1984-01-01

    Stark-width measurements are reported for lines in the ns-4p (n = 7--10) and nd-4p (n = 5--8) series in neutral potassium (K I). These measurements were made by observing the end-on emission from a low pressure (20 Torr) potassium-argon wall-stabilized arc source. The on-axis electron density and temperature in the 20-A arc were (2.0 +- 0.2) x 10 15 cm -3 and 2955 +- 100 K, respectively. The experimentally determined Stark widths were compared with the theoretical values calculated by Griem. The measured Stark widths agreed with theory to within 30% for lines in the ns-4p series; while the measured Stark widths of the nd-4p series lines were only one-third of the theoretical values

  16. Comparison of three Stark problem solution techniques for the bounded case

    Science.gov (United States)

    Hatten, Noble; Russell, Ryan P.

    2015-01-01

    Three methods of obtaining solutions to the Stark problem—one developed by Lantoine and Russell using Jacobi elliptic and related functions, one developed by Biscani and Izzo using Weierstrass elliptic and related functions, and one developed by Pellegrini, Russell, and Vittaldev using and Taylor series extended to the Stark problem—are compared qualitatively and quantitatively for the bounded motion case. For consistency with existing available code for the series solution, Fortran routines of the Lantoine method and Biscani method are newly implemented and made available. For these implementations, the Lantoine formulation is found to be more efficient than the Biscani formulation in the propagation of a single trajectory segment. However, for applications for which acceptable accuracy may be achieved by orders up to 16, the Pellegrini series solution is shown to be more efficient than either analytical method. The three methods are also compared in the propagation of sequentially connected trajectory segments in a low-thrust orbital transfer maneuver. Separate tests are conducted for discretizations between 8 and 96 segments per orbit. For the series solution, the interaction between order and step size leads to computation times that are nearly invariable to discretization for a given truncation error tolerance over the tested range of discretizations. This finding makes the series solution particularly attractive for mission design applications where problems may require both coarse and fine discretizations. Example applications include the modeling of low-thrust propulsion and time-varying perturbations—problems for which the efficient propagation of relatively short Stark segments is paramount because the disturbing acceleration generally varies continuously.

  17. Phonon-assisted hopping of an electron on a Wannier-Stark ladder in a strong electric field

    International Nuclear Information System (INIS)

    Emin, D.; Hart, C.F.

    1987-01-01

    With the application of a spatially constant electric field, the degeneracy of electronic energy levels of geometrically equivalent sites of a crystal is generally lifted. As a result, the electric field causes the electronic eigenstates of a one-dimensional periodic chain to become localized. In particular, they are Wannier-Stark states. With sufficiently large electric-field strengths these states become sufficiently well localized that it becomes appropriate to consider electronic transport to occur via a succession of phonon-assisted hops between the localized Wannier-Stark states. In this paper, we present calculations of the drift velocity arising from acoustic- and optical-phonon-assisted hopping motion between Wannier-Stark states. When the intersite electronic transfer energy is sufficiently small so that the Wannier-Stark states are essentially each confined to a single atomic site, the transport reduces to that of a small polaron. In this regime, while the drift velocity initially rises with increasing electric field strength, the drift velocity ultimately falls with increasing electric-field strength at extremely large electric fields. More generally, for common values of the electronic bandwidth and electric field strength, the Wannier-Stark states span many sites. At sufficiently large electric fields, the energy separation between Wannier-Stark states exceeds the energy uncertainty associated with the carrier's interaction with phonons. Then, it is appropriate to treat the electronic transport in terms of phonon-assisted hopping between Wannier-Stark states. The resulting high-field drift velocity falls with increasing field strength in a series of steps. Thus, we find a structured negative differential mobility at large electric fields

  18. Direct measurement of electron density in microdischarge at atmospheric pressure by Stark broadening

    International Nuclear Information System (INIS)

    Dong Lifang; Ran Junxia; Mao Zhiguo

    2005-01-01

    We present a method and results for measurement of electron density in atmospheric-pressure dielectric barrier discharge. The electron density of microdischarge in atmospheric pressure argon is measured by using the spectral line profile method. The asymmetrical deconvolution is used to obtain Stark broadening. The results show that the electron density in single filamentary microdischarge at atmospheric pressure argon is 3.05x10 15 cm -3 if the electron temperature is 10,000 K. The result is in good agreement with the simulation. The electron density in dielectric barrier discharge increases with the increase of applied voltage

  19. Extremely short pulses via stark modulation of the atomic transition frequencies.

    Science.gov (United States)

    Radeonychev, Y V; Polovinkin, V A; Kocharovskaya, Olga

    2010-10-29

    We propose a universal method to produce extremely short pulses of electromagnetic radiation in various spectral ranges. The essence of the method is a resonant interaction of radiation with atoms under the conditions of adiabatic periodic modulation of atomic transition frequencies by a far-off-resonant control laser field via dynamic Stark shift of the atomic levels and proper adjustment of the control field intensity and frequency, as well as the optical depth of the medium. The potential of the method is illustrated by an example in a hydrogenlike atomic system.

  20. Application of Stark Tuned Laser for Interferometry and Polarimetry in Plasmas

    International Nuclear Information System (INIS)

    H.K. Park; K.C. Lee; B. Deng; C.W. Domier; M. Johnson; B. Nathan; N.C. Luhmann, Jr.

    2001-01-01

    A Stark-tuned optically pumped far-infrared CH(subscript ''3'')OH laser at 119 mm has been successfully applied in the Far Infrared Tangential Interferometer/Polarimeter (FIReTIP) system for the National Spherical Torus Experiment (NSTX). The system will provide temporally and radially resolved 2-D electron density profile [n(subscript ''e'')(r,t)] and toroidal field profile [B(subscript ''T'')(r,t)] data. In the 2001 campaign, a single channel interferometer system has been operated and tested for the Faraday rotation measurement. A plan for improvement and upgrading of the FIReTIP is discussed

  1. Quantum logic gates using Stark-shifted Raman transitions in a cavity

    International Nuclear Information System (INIS)

    Biswas, Asoka; Agarwal, G.S.

    2004-01-01

    We present a scheme to realize the basic two-qubit logic gates such as the quantum phase gate and the controlled-NOT gate using a detuned optical cavity interacting with a three-level Raman system. We discuss the role of Stark shifts, which are as important as the terms leading to the two-photon transition. The operation of the proposed logic gates involves metastable states of the atom and hence is not affected by spontaneous emission. These ideas can be extended to produce multiparticle entanglement

  2. Stark broadening in the laser-induced Cu I and Cu II spectra

    International Nuclear Information System (INIS)

    Skočić, M; Burger, M; Nikolić, Z; Bukvić, S; Djeniže, S

    2013-01-01

    In this work we present the Stark widths (W) of 22 neutral (Cu I) and 100 singly ionized (Cu II) copper spectral lines that have been measured at 18 400 K and 19 300 K electron temperatures and 6.3 × 10  22 m −3 and 2.1 × 10  23 m −3 electron densities, respectively. The experiment is conducted in the laser-induced plasma—the Nd:YAG laser, operating at 532 nm, was used to produce plasma from the copper sample in the residual air atmosphere at a pressure of 8 Pa. The electron temperature and density were estimated by the Boltzmann-plot method and from the Saha equation. The investigated Cu I lines belong to the 4s–4p′, 4s  2 –4p″ and 4p′–4d′ transitions while Cu II spectral lines belong to the 4s–4p, 4p–5s, 4p–4d, 4p–4s  2 , 4d–4f and 4d–v transitions. Comparison with existing experimental data was possible only in the case of 17 Cu II lines due to a lack of experimental and theoretical values. The rest of the data, Stark widths of 22 Cu I and 83 Cu II lines are published for the first time. (paper)

  3. Plasma density characterization at SPARC-LAB through Stark broadening of Hydrogen spectral lines

    International Nuclear Information System (INIS)

    Filippi, F.; Anania, M.P.; Bellaveglia, M.; Biagioni, A.; Chiadroni, E.; Cianchi, A.; Di Giovenale, D.; Di Pirro, G.; Ferrario, M.; Mostacci, A.; Palumbo, L.; Pompili, R.; Shpakov, V.; Vaccarezza, C.; Villa, F.; Zigler, A.

    2016-01-01

    Plasma-based acceleration techniques are of great interest for future, compact accelerators due to their high accelerating gradient. Both particle-driven and laser-driven Plasma Wakefield Acceleration experiments are foreseen at the SPARC-LAB Test Facility (INFN National Laboratories of Frascati, Italy), with the aim to accelerate high-brightness electron beams. In order to optimize the efficiency of the acceleration in the plasma and preserve the quality of the accelerated beam, the knowledge of the plasma electron density is mandatory. The Stark broadening of the Hydrogen spectral lines is one of the candidates used to characterize plasma density. The implementation of this diagnostic for plasma-based experiments at SPARC-LAB is presented. - Highlights: • Stark broadening of Hydrogen lines has been measured to determine plasma density. • Plasma density diagnostic tool for plasma-based experiments at SPARC-LAB is presented. • Plasma density in tapered laser triggered ablative capillary discharge was measured. • Results of plasma density measurements in ablative capillaries are shown.

  4. Plasma density characterization at SPARC-LAB through Stark broadening of Hydrogen spectral lines

    Energy Technology Data Exchange (ETDEWEB)

    Filippi, F., E-mail: francesco.filippi@roma1.infn.it [Dipartimento di Scienze di Base e Applicate per l' Ingegneria (SBAI), ‘Sapienza’ Università di Roma, Via A. Scarpa 14-16, 00161 Roma (Italy); INFN-Roma1, Piazzale Aldo Moro, 2 00161 Roma (Italy); Anania, M.P.; Bellaveglia, M.; Biagioni, A.; Chiadroni, E. [Laboratori Nazionali di Frascati, INFN, Via E. Fermi, Frascati (Italy); Cianchi, A. [Dipartimento di Fisica, Universitá di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma (Italy); Di Giovenale, D.; Di Pirro, G.; Ferrario, M. [Laboratori Nazionali di Frascati, INFN, Via E. Fermi, Frascati (Italy); Mostacci, A.; Palumbo, L. [Dipartimento di Scienze di Base e Applicate per l' Ingegneria (SBAI), ‘Sapienza’ Università di Roma, Via A. Scarpa 14-16, 00161 Roma (Italy); INFN-Roma1, Piazzale Aldo Moro, 2 00161 Roma (Italy); Pompili, R.; Shpakov, V.; Vaccarezza, C.; Villa, F. [Laboratori Nazionali di Frascati, INFN, Via E. Fermi, Frascati (Italy); Zigler, A. [Hebrew University of Jerusalem, Jerusalem 91904 (Israel)

    2016-09-01

    Plasma-based acceleration techniques are of great interest for future, compact accelerators due to their high accelerating gradient. Both particle-driven and laser-driven Plasma Wakefield Acceleration experiments are foreseen at the SPARC-LAB Test Facility (INFN National Laboratories of Frascati, Italy), with the aim to accelerate high-brightness electron beams. In order to optimize the efficiency of the acceleration in the plasma and preserve the quality of the accelerated beam, the knowledge of the plasma electron density is mandatory. The Stark broadening of the Hydrogen spectral lines is one of the candidates used to characterize plasma density. The implementation of this diagnostic for plasma-based experiments at SPARC-LAB is presented. - Highlights: • Stark broadening of Hydrogen lines has been measured to determine plasma density. • Plasma density diagnostic tool for plasma-based experiments at SPARC-LAB is presented. • Plasma density in tapered laser triggered ablative capillary discharge was measured. • Results of plasma density measurements in ablative capillaries are shown.

  5. Optimal beam sources for Stark decelerators in collision experiments: a tutorial review

    International Nuclear Information System (INIS)

    Vogels, Sjoerd N.; Gao, Zhi; Meerakker, Sebastiaan Y.T. van de

    2015-01-01

    With the Stark deceleration technique, packets of molecules with a tunable velocity, a narrow velocity spread, and a high state purity can be produced. These tamed molecular beams find applications in high resolution spectroscopy, cold molecule trapping, and controlled scattering experiments. The quality and purity of the packets of molecules emerging from the decelerator critically depend on the specifications of the decelerator, but also on the characteristics of the molecular beam pulse with which the decelerator is loaded. We consider three frequently used molecular beam sources, and discuss their suitability for molecular beam deceleration experiments, in particular with the application in crossed beam scattering in mind. The performance of two valves in particular, the Nijmegen Pulsed Valve and the Jordan Valve, is illustrated by decelerating ND 3 molecules in a 2.6 meter-long Stark decelerator. We describe a protocol to characterize the valve, and to optimally load the pulse of molecules into the decelerator. We characterize the valves regarding opening time duration, optimal valve-to-skimmer distance, mean velocity, velocity spread, state purity, and relative intensity. (orig.)

  6. Entanglement analysis of a two-atom nonlinear Jaynes-Cummings model with nondegenerate two-photon transition, Kerr nonlinearity, and two-mode Stark shift

    Science.gov (United States)

    Baghshahi, H. R.; Tavassoly, M. K.; Faghihi, M. J.

    2014-12-01

    An entangled state, as an essential tool in quantum information processing, may be generated through the interaction between light and matter in cavity quantum electrodynamics. In this paper, we study the interaction between two two-level atoms and a two-mode field in an optical cavity enclosed by a medium with Kerr nonlinearity in the presence of a detuning parameter and Stark effect. It is assumed that the atom-field coupling and third-order susceptibility of the Kerr medium depend on the intensity of the light. In order to investigate the dynamics of the introduced system, we obtain the exact analytical form of the state vector of the considered atom-field system under initial conditions which may be prepared for the atoms (in a coherent superposition of their ground and upper states) and the fields (in a standard coherent state). Then, in order to evaluate the degree of entanglement between the subsystems, we investigate the dynamics of the entanglement by employing the entanglement of formation. Finally, we analyze in detail the influences of the Stark shift, the deformed Kerr medium, the intensity-dependent coupling, and also the detuning parameter on the behavior of this measure for different subsystems. The numerical results show that the amount of entanglement between the different subsystems can be controlled by choosing the evolved parameters appropriately.

  7. Entanglement analysis of a two-atom nonlinear Jaynes–Cummings model with nondegenerate two-photon transition, Kerr nonlinearity, and two-mode Stark shift

    International Nuclear Information System (INIS)

    Baghshahi, H R; Tavassoly, M K; Faghihi, M J

    2014-01-01

    An entangled state, as an essential tool in quantum information processing, may be generated through the interaction between light and matter in cavity quantum electrodynamics. In this paper, we study the interaction between two two-level atoms and a two-mode field in an optical cavity enclosed by a medium with Kerr nonlinearity in the presence of a detuning parameter and Stark effect. It is assumed that the atom–field coupling and third-order susceptibility of the Kerr medium depend on the intensity of the light. In order to investigate the dynamics of the introduced system, we obtain the exact analytical form of the state vector of the considered atom–field system under initial conditions which may be prepared for the atoms (in a coherent superposition of their ground and upper states) and the fields (in a standard coherent state). Then, in order to evaluate the degree of entanglement between the subsystems, we investigate the dynamics of the entanglement by employing the entanglement of formation. Finally, we analyze in detail the influences of the Stark shift, the deformed Kerr medium, the intensity-dependent coupling, and also the detuning parameter on the behavior of this measure for different subsystems. The numerical results show that the amount of entanglement between the different subsystems can be controlled by choosing the evolved parameters appropriately. (paper)

  8. Surface Acoustic Bloch Oscillations, the Wannier-Stark Ladder, and Landau-Zener Tunneling in a Solid

    Science.gov (United States)

    de Lima, M. M., Jr.; Kosevich, Yu. A.; Santos, P. V.; Cantarero, A.

    2010-04-01

    We present the experimental observation of Bloch oscillations, the Wannier-Stark ladder, and Landau-Zener tunneling of surface acoustic waves in perturbed grating structures on a solid substrate. A model providing a quantitative description of our experimental observations, including multiple Landau-Zener transitions of the anticrossed surface acoustic Wannier-Stark states, is developed. The use of a planar geometry for the realization of the Bloch oscillations and Landau-Zener tunneling allows a direct access to the elastic field distribution. The vertical surface displacement has been measured by interferometry.

  9. Experimental transition probabilities and Stark parameters of singly ionized noble gases

    OpenAIRE

    Belmonte Sainz-Ezquerra, María Teresa

    2016-01-01

    La medida de parámetros atómicos, tales como las probabilidades de transición y las anchuras y desplazamientos Stark, es de gran importancia no solo en el campo de la física teórica y atómica, sino también en el diagnóstico de cualquier fuente emisora de radiación y en el área de la astrofísica. El objetivo de esta tesis doctoral es la medida de nuevos datos atómicos mediante una técnica de espectroscopia de emisión de plasmas. En concreto, este trabajo se ha centrado en: 1) Me...

  10. To Bind Ties between the School and Tribal Life: Educational Policy for Africans under George Stark in Zimbabwe.

    Science.gov (United States)

    Mungazi, Dickson A.

    1989-01-01

    Contends that educational policy in Zimbabwe from 1934 to 1954 served the political purposes of the colonial government and neglected genuine educational development of the colonized Africans. During George Stark's tenure as Director of Native Education, Zimbabweans were consigned to "practical training" programs and were denied access…

  11. The Stark-crossing method for the simultaneous determination of the electron temperature and density in plasmas

    International Nuclear Information System (INIS)

    Torres, J; Carabano, O; Fernandez, M; Rubio, S; Alvarez, R; Rodero, A; Lao, C; Quintero, M C; Gamero, A; Sola, A

    2006-01-01

    The use of the Stark broadening of Balmer lines spontaneously emitted by atmospheric-pressure plasmas as a method to determine both the electron density and temperature in high-pressure plasmas is discussed in this paper. This method is applied to argon and helium plasmas produced in microwave discharges. Especially for Ar plasmas, valuable and reliable results are obtained

  12. Effect of abnormal high solubility of impurity in nanocrystalls and its metrological aspects

    International Nuclear Information System (INIS)

    Oksengendler, B L; Turaeva, N N; Nikiforov, V N; Sredin, V G; Maksimov, S E

    2011-01-01

    The problem of doping impurity intrusion into nanoparticles is analyzed. Thermodynamical model of the effect is developed, taking into account specific properties of nanoparticles: quantum confinement of elementary excitations and the impact of nanoparticle surface states compared with bulk ones. We obtained the size dependence of impact equilibrium solubility in nanoparticles. Magnetometric experiments, carried out on nanoparticle ensemble of iron oxide doped with gadolinium and other impurities, show lack of contradictions and good qualitative accordance between the model and the experiment.

  13. Unified Drain Current Model of Armchair Graphene Nanoribbons with Uniaxial Strain and Quantum Effect

    Directory of Open Access Journals (Sweden)

    EngSiew Kang

    2014-01-01

    Full Text Available A unified current-voltage I-V model of uniaxial strained armchair graphene nanoribbons (AGNRs incorporating quantum confinement effects is presented in this paper. The I-V model is enhanced by integrating both linear and saturation regions into a unified and precise model of AGNRs. The derivation originates from energy dispersion throughout the entire Brillouin zone of uniaxial strained AGNRs based on the tight-binding approximation. Our results reveal the modification of the energy band gap, carrier density, and drain current upon strain. The effects of quantum confinement were investigated in terms of the quantum capacitance calculated from the broadening density of states. The results show that quantum effect is greatly dependent on the magnitude of applied strain, gate voltage, channel length, and oxide thickness. The discrepancies between the classical calculation and quantum calculation were also measured and it has been found to be as high as 19% drive current loss due to the quantum confinement. Our finding which is in good agreement with the published data provides significant insight into the device performance of uniaxial strained AGNRs in nanoelectronic applications.

  14. Stark components of lower-lying manifolds and emission cross-sections of intermanifold and inter-stark transitions of Nd3+(4f3) in polycrystalline ceramic garnet Y3Al5O12

    International Nuclear Information System (INIS)

    Sardar, Dhiraj K.; Yow, Raylon M.; Gruber, John B.; Allik, Toomas H.; Zandi, Bahram

    2006-01-01

    Stark energy levels of the 4 F 3/2 , 4 I 9/2 , and 4 I 11/2 manifolds have been characterized using the room temperature fluorescence spectra for the 4 F 3/2 → 4 I 9/2 and 4 F 3/2 → 4 I 11/2 transitions of Nd 3+ (4f 3 ) in polycrystalline ceramic garnet Y 3 Al 5 O 12 (YAG). The emission cross-sections of the intermanifold transitions, 4 F 3/2 → 4 I 9/2 and 4 F 3/2 → 4 I 11/2 , as well as the principal inter-Stark transitions, R 1 →Z 5 (945.3 nm) and R 1 →Y 2 (1063.5 nm), have also been determined. These results are finally compared with those of Nd 3+ :YAG single crystal

  15. Topology of surfaces for molecular Stark energy, alignment, and orientation generated by combined permanent and induced electric dipole interactions.

    Science.gov (United States)

    Schmidt, Burkhard; Friedrich, Bretislav

    2014-02-14

    We show that combined permanent and induced electric dipole interactions of linear polar and polarizable molecules with collinear electric fields lead to a sui generis topology of the corresponding Stark energy surfaces and of other observables - such as alignment and orientation cosines - in the plane spanned by the permanent and induced dipole interaction parameters. We find that the loci of the intersections of the surfaces can be traced analytically and that the eigenstates as well as the number of their intersections can be characterized by a single integer index. The value of the index, distinctive for a particular ratio of the interaction parameters, brings out a close kinship with the eigenproperties obtained previously for a class of Stark states via the apparatus of supersymmetric quantum mechanics.

  16. Topology of surfaces for molecular Stark energy, alignment, and orientation generated by combined permanent and induced electric dipole interactions

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Burkhard, E-mail: burkhard.schmidt@fu-berlin.de [Institute for Mathematics, Freie Universität Berlin, Arnimallee 6, D-14195 Berlin (Germany); Friedrich, Bretislav, E-mail: brich@fhi-berlin.mpg.de [Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin (Germany)

    2014-02-14

    We show that combined permanent and induced electric dipole interactions of linear polar and polarizable molecules with collinear electric fields lead to a sui generis topology of the corresponding Stark energy surfaces and of other observables – such as alignment and orientation cosines – in the plane spanned by the permanent and induced dipole interaction parameters. We find that the loci of the intersections of the surfaces can be traced analytically and that the eigenstates as well as the number of their intersections can be characterized by a single integer index. The value of the index, distinctive for a particular ratio of the interaction parameters, brings out a close kinship with the eigenproperties obtained previously for a class of Stark states via the apparatus of supersymmetric quantum mechanics.

  17. An easy way to determine simultaneously the electron density and temperature in high-pressure plasmas by using Stark broadening

    International Nuclear Information System (INIS)

    Torres, J; Jonkers, J; Sande, M J van de; Mullen, J J A M van der; Gamero, A; Sola, A

    2003-01-01

    This paper discusses the possibility of determining, at the same time, both the electron density and temperature in a discharge produced at atmospheric pressure using the Stark broadening of lines spontaneously emitted by a plasma. This direct method allows us to obtain experimental results that are in good agreement with others previously obtained for the same type of discharge. Its advantages and disadvantages compared to other direct methods of diagnostics, namely Thomson scattering, are also discussed. (rapid communication)

  18. Determination of Stark parameters by cross-calibration in a multi-element laser-induced plasma

    Science.gov (United States)

    Liu, Hao; Truscott, Benjamin S.; Ashfold, Michael N. R.

    2016-05-01

    We illustrate a Stark broadening analysis of the electron density Ne and temperature Te in a laser-induced plasma (LIP), using a model free of assumptions regarding local thermodynamic equilibrium (LTE). The method relies on Stark parameters determined also without assuming LTE, which are often unknown and unavailable in the literature. Here, we demonstrate that the necessary values can be obtained in situ by cross-calibration between the spectral lines of different charge states, and even different elements, given determinations of Ne and Te based on appropriate parameters for at least one observed transition. This approach enables essentially free choice between species on which to base the analysis, extending the range over which these properties can be measured and giving improved access to low-density plasmas out of LTE. Because of the availability of suitable tabulated values for several charge states of both Si and C, the example of a SiC LIP is taken to illustrate the consistency and accuracy of the procedure. The cross-calibrated Stark parameters are at least as reliable as values obtained by other means, offering a straightforward route to extending the literature in this area.

  19. WATER TEMPERATURE and other data from STARK in the Mediterranean Sea from 1992-01-07 to 1992-01-31 (NODC Accession 9200044)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The data in this accession were collected in Mediterranean Sea from ship STARK between January 7, 1992 and January 31, 1992. The real time data of water temperature...

  20. Measured, calculated and predicted Stark widths of the singly ionized C, N, O, F, Ne, Si, P, S, Cl and Ar spectral lines

    Directory of Open Access Journals (Sweden)

    Djeniže S.

    2000-01-01

    Full Text Available In order to find reliable Stark width data, needed in plasma spectroscopy comparision between the existing measured, calculated and predicted Stark width values was performed for ten singly ionized emitters: C, N, O, F, Ne Si, P, S, Cl and Ar in the lower lying 3s - 3p, 3p - 3d and 4s - 4p transitions. These emitters are present in many cosmic light sources. On the basis of the agreement between mentioned values 17 spectral lines from six singly ionized spectra have been recommended, for the first time, for plasma spectroscopy as spectral lines with reliable Stark width data. Critical analysis of the existing Stark width data is also given.

  1. Turbidity, SOLAR RADIATION - ATMOSPHERIC and other data from STARK in the NW Atlantic from 1991-01-01 to 1991-12-31 (NODC Accession 9600031)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The Ocean Station Data from 17 stations; and Conductivity, Temperature and Depth (CTD) data from 49 casts were collected using ship Stark during cruises # 688-711....

  2. Algebraic theory of Stark-Zeeman dynamic effect in hydrogen-like atom

    International Nuclear Information System (INIS)

    Fursa, D.V.; Yudin, G.L.

    1990-01-01

    The problems of calculating time evolution operator within the given n-shell (here n is main quantum number) for the hydrogen atom located in non-stationary electric and magnetic fields is under investigation. Making use of the Fock SO(4) group reduces this problem to the set of problems with linear realization of the dynamic symmetry group for which the evolution operator is the operator of corresponding groups representation. The types of evolution operator parametrization in the form of exponents product (the Wei-Norman method) any by means of D-functions connected with Euler angles and Cayley-Klein parameters are discussed. It is shown that the problem of evolution operator calculation can be reduced to investigation of a pair of two-level systems. 35 refs

  3. Higher-order Stark effect on magnetic fine structure of the helium atom

    Energy Technology Data Exchange (ETDEWEB)

    Magunov, A.; Pal' chikov, V.; Pivovarov, V. [National Research Inst. for Physical-Technical and Radiotechnical Measurements (VNIIFTRI), Mendeleevo, Moscow Region (Russian Federation); Ovsiannikov, V. [Dept. of Physics, Voronezh State Univ. (Russian Federation); Oppen, G. von [Inst. fuer Analytische und Atomare Physik at Technische Univ. Berlin (Germany)

    2001-07-01

    We have calculated the scalar and tensor dipole polarizabilities ({beta}) and hyperpolarizabilities ({gamma}) of excited 1s2p {sup 3}P{sub 0}, 1s2p {sup 3}P{sub 2}- states of helium. Our theory includes fine structure of triplet sublevels. Semiempirical and accurate electron-correlated wave functions have been used to determine the static values of {beta} and {gamma}. Numerical calculations are carried out using sums of oscillator strengths and, alternatively, with the Green function for the excited valence electron. Specifically, we present results for the integral over the continuum, for second- and fourth-order matrix elements. The corresponding estimations indicate that these corrections are of the order of 23% for the scalar part of polarizability and only of the order of 3% for the tensor part.

  4. Phosphorene nanoribbons: Passivation effect on bandgap and effective mass

    International Nuclear Information System (INIS)

    Xu, Li-Chun; Song, Xian-Jiang; Yang, Zhi; Cao, Ling; Liu, Rui-Ping; Li, Xiu-Yan

    2015-01-01

    Highlights: • Hydrogenation and fluorination can passivate the metallic edge states of zPNRs. • The bandgap of each type of zPNRs decreases as the ribbon's width increases duo to the quantum confinement effect. • Two local configurations of passivated atoms can coexist in nanoribbons and affect the bandgap of narrow nanoribbons. • New passivation configuration can effectively reduce the effective mass of electrons. - Abstract: The edge passivation effect of phosphorene nanoribbons is systematically investigated using density functional theory. Hydrogen and fluorine atoms passivate the metallic edge states of nanoribbons and can open a bandgap up to 2.25 eV. The two configurations of passivated atoms can exist at two edges and affect the bandgap of narrow nanoribbons. The bandgap of each type of zPNRs decreases as the ribbon's width increases, which can be attributed to the quantum confinement effect. The new configuration, named C b , can effectively reduce the effective mass of electrons, which benefits the future design of phosphorene-based electronic devices

  5. Phosphorene nanoribbons: Passivation effect on bandgap and effective mass

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Li-Chun, E-mail: xulichun@tyut.edu.cn; Song, Xian-Jiang; Yang, Zhi; Cao, Ling; Liu, Rui-Ping; Li, Xiu-Yan

    2015-01-01

    Highlights: • Hydrogenation and fluorination can passivate the metallic edge states of zPNRs. • The bandgap of each type of zPNRs decreases as the ribbon's width increases duo to the quantum confinement effect. • Two local configurations of passivated atoms can coexist in nanoribbons and affect the bandgap of narrow nanoribbons. • New passivation configuration can effectively reduce the effective mass of electrons. - Abstract: The edge passivation effect of phosphorene nanoribbons is systematically investigated using density functional theory. Hydrogen and fluorine atoms passivate the metallic edge states of nanoribbons and can open a bandgap up to 2.25 eV. The two configurations of passivated atoms can exist at two edges and affect the bandgap of narrow nanoribbons. The bandgap of each type of zPNRs decreases as the ribbon's width increases, which can be attributed to the quantum confinement effect. The new configuration, named C{sub b}, can effectively reduce the effective mass of electrons, which benefits the future design of phosphorene-based electronic devices.

  6. Quantum Confined Semiconductors - In-House Interim Research

    Science.gov (United States)

    2013-04-01

    Laboratory, Materials & Manufacturing Directorate, Wright Patterson AFB, OH 45433-7707, USA blnstituto de Ciencias Fisicas, Universidad Nacional Aut6noma...111is work was supported by the Ai1· Force Office of Scientific Research (AFRU RS E, Dr. Kitt Reinhardt). • Also with lnstituto de Ciencias Fisicas

  7. Quantum confined laser devices optical gain and recombination in semiconductors

    CERN Document Server

    Blood, Peter

    2015-01-01

    The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

  8. Quantum confinement of lead titanate nanocrystals by wet chemical method

    Energy Technology Data Exchange (ETDEWEB)

    Kaviyarasu, K., E-mail: kaviyarasuloyolacollege@gmail.com [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology Laboratories, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), Materials Research Department (MSD), iThemba LABS-National Research Foundation - NRF, 1 Old Faure Road, 7129, P O Box 722, Somerset West, Western Cape Province (South Africa); Manikandan, E., E-mail: maniphysics@gmail.com [Nanosciences African Network (NANOAFNET), Materials Research Department (MSD), iThemba LABS-National Research Foundation - NRF, 1 Old Faure Road, 7129, P O Box 722, Somerset West, Western Cape Province (South Africa); Central Research Laboratory, Sree Balaji Medical College & Hospital, Bharath University, Chrompet, Chennai, Tamil Nadu (India); Nuru, Z.Y. [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology Laboratories, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), Materials Research Department (MSD), iThemba LABS-National Research Foundation - NRF, 1 Old Faure Road, 7129, P O Box 722, Somerset West, Western Cape Province (South Africa); Maaza, M., E-mail: likmaaz@gmail.com [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology Laboratories, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), Materials Research Department (MSD), iThemba LABS-National Research Foundation - NRF, 1 Old Faure Road, 7129, P O Box 722, Somerset West, Western Cape Province (South Africa)

    2015-11-15

    Lead Titanate (PbTiO{sub 3)} is a category of the practical semiconductor metal oxides, which is widely applied in various scientific and industrial fields because of its catalytic, optical, and electrical properties. PbTiO{sub 3} nanocrystalline materials have attracted a wide attention due to their unique properties. PbTiO{sub 3} nanocrystals were investigated by X-ray diffraction (XRD) to identify the PbTiO{sub 3} nanocrystals were composed a tetragonal structure. The diameter of a single sphere was around 20 nm and the diameter reached up to 3 μm. The chemical composition of the samples and the valence states of elements were determined by X-ray photoelectron spectroscopy (XPS) in detail. - Highlights: • Single crystalline NSs of PbTiO{sub 3} fabricated by wet chemical method. • PbTiO{sub 3} NSs were uniform and continuous along the long axis. • Tetragonal perovskite structure with the diameter 20 nm and length 3 μm. • XPS spectrum was fitted with Lorentzian function respectively. • The size of the images is also 10 μm × 10 μm.

  9. Charge injection and transport in quantum confined and disordered systems

    NARCIS (Netherlands)

    Houtepen, A.J.

    2007-01-01

    Quantum dots and conducting polymers are modern semiconductors with a high potential for applications such as lasers, LEDs, displays, solar cells etc. These applications require the controlled addition of charge carriers into the material and knowledge of the details of charge transport. This thesis

  10. Field enhancement at metallic interfaces due to quantum confinement

    DEFF Research Database (Denmark)

    Öztürk, Fatih; Xiao, Sanshui; Yan, Min

    2011-01-01

    We point out an apparently overlooked consequence of the boundary conditions obeyed by the electric displacement vector at air-metal interfaces: the continuity of the normal component combined with the quantum mechanical penetration of the electron gas in the air implies the existence of a surfac...

  11. Optics of colloidal quantum-confined CdSe nanoscrolls

    Energy Technology Data Exchange (ETDEWEB)

    Vasiliev, R B; Sokolikova, M S [M. V. Lomonosov Moscow State University, Moscow (Russian Federation); Vitukhnovskii, A G; Ambrozevich, S A; Selyukov, A S; Lebedev, V S [P N Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

    2015-09-30

    Nanostructures in the form of 1.2-nm-thick colloidal CdSe nanoplatelets rolled into scrolls are investigated. The morphology of these scrolls is analysed and their basic geometric parameters are determined (diameter 29 nm, longitudinal size 100 – 150 nm) by TEM microscopy. Absorption and photoluminescence spectra of these objects are recorded, and the luminescence decay kinetics is studied. It is shown that the optical properties of CdSe nanoscrolls differ significantly from the properties of CdSe quantum dots and that these nanoscrolls are attractive for nanophotonic devices due to large oscillator strengths of the transition, small widths of excitonic peaks and short luminescence decay times. Nanoscrolls can be used to design hybrid organic–inorganic pure-color LEDs with a high luminescence quantum yield and low operating voltages. (optics and technology of nanostructures)

  12. A new species of Neoperla from China, with a redescription of the female of N. mnong Stark, 1987 (Plecoptera, Perlidae

    Directory of Open Access Journals (Sweden)

    Zhi-Teng Chen

    2016-09-01

    Full Text Available A new species of the Neoperla clymene group (Plecoptera, Perlidae, N. chebalinga sp. n. from Guangdong Province of southern China is described, illustrated, and compared with related taxa. The new species is characterized by the slender aedeagal tube, strongly sclerotized dorsally, and weakly sclerotized ventrally with an upcurved, medial, finger-like membranous lobe. Additionally the aedeagal sac gradually tapers to a blunt apex with a dorsoapical patch of spines. A supplementary description of the female of N. mnong Stark, 1987 from Guangdong Province, China is also given.

  13. A new species of Neoperla from China, with a redescription of the female of N. mnong Stark, 1987 (Plecoptera, Perlidae).

    Science.gov (United States)

    Chen, Zhi-Teng; Du, Yu-Zhou

    2016-01-01

    A new species of the Neoperla clymene group (Plecoptera, Perlidae), Neoperla chebalinga sp. n. from Guangdong Province of southern China is described, illustrated, and compared with related taxa. The new species is characterized by the slender aedeagal tube, strongly sclerotized dorsally, and weakly sclerotized ventrally with an upcurved, medial, finger-like membranous lobe. Additionally the aedeagal sac gradually tapers to a blunt apex with a dorsoapical patch of spines. A supplementary description of the female of Neoperla mnong Stark, 1987 from Guangdong Province, China is also given.

  14. Measurement of Stark width of some Ar I transitions and the investigation of local thermodynamic equilibrium (LTE) in an atmospheric d.c. argon plasma jet

    International Nuclear Information System (INIS)

    Bakshi, V.

    1988-01-01

    The Stark widths of seven Ar I transitions are reported. Axial line shape data from an atmospheric d.c. argon plasma jet were Abel-inverted to obtain radial line shapes. The electron-density was determined by Stark width measurements of the hydrogen H β transition. In the electron-density region of ≤6 x 10 22 m -3 the experimental Ar I Stark widths are fitted to a linear dependence on the electron-density. Values of Stark width extrapolated to other electron densities are compared to measurements reported in the literature on the 4s-4p array. Experimental values are up to 45% smaller than those predicted by Griem's theory of Stark broadening. Conditions for local thermodynamic equilibrium (LTE) to exist in an atmospheric argon plasma jet were studied. The experiment measures the emission coefficient of seven Ar I transitions and the line shape of the hydrogen H beta transition. After transforming the side-on data into radial space the excited neutral argon atom-density and the electron-density are determined. It is found LTE does not exist below an electron-density of 6 x 10 33 m -3 in the experimental conditions

  15. Extensión del Formalismo de Orbitales de Defecto Cuántico al tratamiento del efecto Stark (SQDO).

    Science.gov (United States)

    Menéndez, J. M.; Martín, I.; Velasco, A. M.

    El estudio experimental de las interacciones de átomos Rydberg altamente excitados con campos eléctricos ha experimentado un creciente interés durante las dos últimas décadas debido, en gran medida, al desarrollo de nuevas técnicas para crear y estudiar átomos Rydberg en el laboratorio. Acompañando a estas nuevas técnicas experimentales, es necesario el desarrollo de modelos teóricos que nos permitan contrastar sus medidas y conocer mejor los fundamentos de los mismos. Desde el punto de vista teórico el conocimiento del desdoblamiento de los niveles energéticos de un átomo en función de la magnitud del campo eléctrico aplicado (lo que se conoce como mapa Stark) es el mejor punto de partida para la descripción del sistema y un prerrequisito fundamental para el cálculo de distintas propiedades atómicas en presencia del campo eléctrico tales como intensidades de transición, umbrales de ionización de campo eléctrico, tiempos de vida, posición y anchura de cruces evitados, etc. En este trabajo presentamos la adaptación del método de orbitales de defecto cuántico [1,2,3] al tratamiento del efecto Stark (SQDO) [4] y su aplicación al cálculo de los desdoblamientos energéticos y fuerzas de oscilador de estados Rydberg en los átomos de Li, Na y K. El propósito de este estudio es, por un lado, desarrollar métodos fiables para la determinación de propiedades atómicas en presencia de campos eléctricos y, por otro, mostrar la fiabilidad de las funciones de onda QDO en la descripción del efecto Stark en sistemas atómicos.

  16. A temporally and spatially resolved electron density diagnostic method for the edge plasma based on Stark broadening

    Energy Technology Data Exchange (ETDEWEB)

    Zafar, A., E-mail: zafara@ornl.gov [Department of Nuclear Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Martin, E. H.; Isler, R. C.; Caughman, J. B. O. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Shannon, S. C. [Department of Nuclear Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2016-11-15

    An electron density diagnostic (≥10{sup 10} cm{sup −3}) capable of high temporal (ms) and spatial (mm) resolution is currently under development at Oak Ridge National Laboratory. The diagnostic is based on measuring the Stark broadened, Doppler-free spectral line profile of the n = 6–2 hydrogen Balmer series transition. The profile is then fit to a fully quantum mechanical model including the appropriate electric and magnetic field operators. The quasi-static approach used to calculate the Doppler-free spectral line profile is outlined here and the results from the model are presented for H-δ spectra for electron densities of 10{sup 10}–10{sup 13} cm{sup −3}. The profile shows complex behavior due to the interaction between the magnetic substates of the atom.

  17. The influence of Stark shift and plasma inhomogeneity on half width of self-absorbed line profiles in the plasma emission spectrum

    International Nuclear Information System (INIS)

    Catsalap, K.Yu.; Ershov-Pavlov, E.A.

    2005-01-01

    Emission spectral line profiles are commonly used for the evaluation of local plasma parameters. The plasma parameters and local line profiles are related in a rather simple way: e.g. at quadratic Stark broadening, the local line half widths and shifts are proportional to the electron density. For homogeneous optically thin plasmas, there is no difference in the line profiles of plasma emission and emissivity spectra. However for inhomogeneous source, the profiles are different due to spatial dependence of electron density and plasma temperature: profiles in the plasma emission are a superposition of different local ones. A transition from the recorded to local profiles is usually performed by tomography techniques. As the result, the measurement procedure is getting slower and additional errors occurs. For transparent plasmas, an approach was developed to evaluate local profiles from as recorded spectra using relations found by modeling. However, for semi-transparent plasmas the relation between the recorded and local profiles is more complicated one. With the optical thickness t increase, profile half width Δλ in the plasma emission spectrum changes much comparing to the profile half width Δλ 0 in the spectrum of optically thin plasma. The ratio t h =Δλ/Δλ 0 on τ for dispersion profile and homogeneous plasma can be written as t h =(-1-τ/ln((1+e -τ )/2)) 1/2 . When Δλ and τ are known, the function allows obtaining Δλ 0 , i. e. reducing the problem to the transparent plasma diagnostics. However, the plasma is nearly always inhomogeneous and the value t depends significantly on plasma inhomogeneity and on Stark parameters ratio d/w. Here, the dependence t(τ) for plasmas of different inhomogeneity rates has been obtained by the numerical simulation. The radiation transfer equation has been solved to calculate the spectral line profiles for LTE-plasma of known composition and distribution of temperature along the observation line. The temperature

  18. Quantum wells for optical information processing

    International Nuclear Information System (INIS)

    Miller, D.A.B.

    1989-01-01

    Quantum wells, alternate thin layers of two different semiconductor materials, show an exceptional electric field dependence of the optical absorption, called the quantum-confined Stark effect (QCSE), for electric fields perpendicular to the layers. This enables electrically controlled optical modulators and optically controlled self-electro-optic-effect devices that can operate at high speed and low energy density. Recent developments in these QCSE devices are summarized, including new device materials and novel device structures. The variety of sophisticated devices now demonstrated is promising for applications to information processing

  19. Recent progress in GeSi electro-absorption modulators

    International Nuclear Information System (INIS)

    Chaisakul, Papichaya; Marris-Morini, Delphine; Rouifed, Mohamed-Said; Coudevylle, Jean-René; Roux, Xavier Le; Edmond, Samson; Vivien, Laurent; Frigerio, Jacopo; Chrastina, Daniel; Isella, Giovanni

    2014-01-01

    Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz–Keldysh effect and the quantum-confined Stark effect from bulk and quantum well structures at telecommunication wavelengths. In this review, we discuss the current state of knowledge and the on-going challenges concerning the development of high performance GeSi electro-absorption modulators. We also provide feasible future prospects concerning this research topic. (review)

  20. Position- and time-resolved Stark broadening diagnostics of a non-thermal laser-induced plasma

    International Nuclear Information System (INIS)

    Liu, Hao; Truscott, Benjamin S; Ashfold, Michael N R

    2016-01-01

    We present an analysis of the Stark-broadened line shapes of silicon ions in a laser-induced plasma using a model constructed, without assuming local thermodynamic equilibrium (LTE), using a Druyvesteyn electron energy distribution function (EEDF). The method is applied to temporally and spatially resolved measurements of Si 2+ and Si 3+ emissions from a transient plasma expanding into vacuum, produced by 1064 nm, nanosecond pulsed laser ablation of a Si (1 0 0) target. The best-fitting simulated line shapes and the corresponding electron number densities and temperatures (or equivalently, Druyvesteyn average energies) are compared with those returned assuming LTE (i.e. for a Maxwellian EEDF). Non-thermal behavior is found to dominate at all but the very earliest stages of expansion close to the target surface, consistent with McWhirter’s criterion for the establishment of LTE. The Druyvesteyn EEDF always yields an equivalent or better model of the experimental measurements, and the observed increasingly strong departure from the Maxwellian case with time and distance from the ablation event highlights the essential invalidity of the LTE assumption for moderate-power, nanosecond laser-induced plasma expanding in vacuo. (paper)

  1. Efficiency dip observed with InGaN-based multiple quantum well solar cells

    KAUST Repository

    Lai, Kunyu; Lin, G. J.; Wu, Yuhrenn; Tsai, Menglun; He, Jr-Hau

    2014-01-01

    The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

  2. Spectral line shape simulation for electron stark-broadening of ion emitters in plasmas

    International Nuclear Information System (INIS)

    Dufour, Emmanuelle; Calisti, Annette; Talin, Bernard; Gigosos, Marco A.; Gonzalez, Manuel A.; Dufty, Jim W.

    2002-01-01

    Electron broadening for ions in plasmas is investigated in the framework of a simplified semi-classical model involving an ionic emitter imbedded in an electron gas. A regularized Coulomb potential that removes the divergence at short distances is postulated for the ion-electron interaction. Line shape simulations based on Molecular Dynamics for the ion impurity and the electrons, accounting for all the correlations, are reported. Comparisons with line shapes obtained with a quasi-particle model show expected correlation effects. Through an analysis of the results with the line shape code PPP, it is inferred that the correlation effect results mainly from the microfield dynamic properties

  3. Anti-Stokes emissions and determination of Stark sub-level diagram of Er3+ ions in KY3F10

    International Nuclear Information System (INIS)

    Boulma, E; Diaf, M; Jouart, J P; Bouffard, M; Doualan, J L; Moncorge, R

    2006-01-01

    We are interested, in this work, in determining the Stark sub-level of Er 3+ ions doping a KY 3 F 10 single crystal with a molar concentration of 1%. We have used a new method of measurement of energies of the ground level and emitting levels from excitation and anti-Stokes emission spectra recorded at liquid nitrogen temperature. This technique is based on a spectral analysis of the anti-Stokes emissions recorded after selective excitation with a red dye tunable laser. Thus, we could determine the Stark sub-levels of the ground and the principal emitting levels in the infrared, visible and near-UV ranges with a very good precision

  4. Rotational cooling of polar molecules by Stark-tuned cavity resonance

    International Nuclear Information System (INIS)

    Ooi, C. H. Raymond

    2003-01-01

    A general scheme for rotational cooling of diatomic heteronuclear molecules is proposed. It uses a superconducting microwave cavity to enhance the spontaneous decay via Purcell effect. Rotational cooling can be induced by sequentially tuning each rotational transition to cavity resonance, starting from the highest transition level to the lowest one using an electric field. Electrostatic multipoles can be used to provide large confinement volume with essentially homogeneous background electric field

  5. Local Electric Field Strength in a Hollow Cathode Determined by Stark Splitting of the 2S Level of Hydrogen Isotopes by Optogalvanic Spectroscopy

    International Nuclear Information System (INIS)

    Perez, C.; Rosa, M. I. de la; Gruetzmacher, K.; Fuentes, L. M.; Gonzalo, A. B.

    2008-01-01

    In this work we present Doppler-free two-photon optogalvanic spectroscopy as a tool to measure the electric field strength in the cathode fall region of a hollow cathode discharge via the Stark splitting of the 2S level of atomic deuterium. The strong electric field strength present in the hollow cathode is determined for various discharge conditions which allows studying the corresponding variations of the cathode fall, and its changes with discharge operation time.

  6. Electronic and Optical Properties of Two-Dimensional GaN from First-Principles.

    Science.gov (United States)

    Sanders, Nocona; Bayerl, Dylan; Shi, Guangsha; Mengle, Kelsey A; Kioupakis, Emmanouil

    2017-12-13

    Gallium nitride (GaN) is an important commercial semiconductor for solid-state lighting applications. Atomically thin GaN, a recently synthesized two-dimensional material, is of particular interest because the extreme quantum confinement enables additional control of its light-emitting properties. We performed first-principles calculations based on density functional and many-body perturbation theory to investigate the electronic, optical, and excitonic properties of monolayer and bilayer two-dimensional (2D) GaN as a function of strain. Our results demonstrate that light emission from monolayer 2D GaN is blueshifted into the deep ultraviolet range, which is promising for sterilization and water-purification applications. Light emission from bilayer 2D GaN occurs at a similar wavelength to its bulk counterpart due to the cancellation of the effect of quantum confinement on the optical gap by the quantum-confined Stark shift. Polarized light emission at room temperature is possible via uniaxial in-plane strain, which is desirable for energy-efficient display applications. We compare the electronic and optical properties of freestanding two-dimensional GaN to atomically thin GaN wells embedded within AlN barriers in order to understand how the functional properties are influenced by the presence of barriers. Our results provide microscopic understanding of the electronic and optical characteristics of GaN at the few-layer regime.

  7. Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Landesman, Jean-Pierre, E-mail: jean-pierre.landesman@univ-rennes1.fr [Institut de Physique de Rennes, CNRS-UMR 6251, Université Rennes 1, F-35042 Rennes (France); Jiménez, Juan; Torres, Alfredo [GdS Optronlab, Dpto. Fisica de la Materia Condensada, Universidad de Valladolid, 47011 Valladolid (Spain); Levallois, Christophe; Léger, Yoan; Beck, Alexandre [UMR FOTON, CNRS, INSA-Rennes, 20 avenue des buttes de Coësmes, F-35708 Rennes (France); Pommereau, Frédéric [III-V Lab, 1 Avenue Augustin Fresnel, RD128, F-91767 Palaiseau (France); Frigeri, Cesare [CNR-IMEM Istituto, Parco area delle Scienze 37/A, 43010 Parma (Italy); Rhallabi, Ahmed [Institut des Matériaux Jean-Rouxel, CNRS-UMR 6502, Université Nantes 1, F-44322 Nantes (France)

    2016-07-15

    The general objective is the investigation of the defects formed by dry etching tools such as those involved in the fabrication of photonic devices with III–V semiconductors. Emphasis is put on plasma exposures with chlorine-based chemistries. In addition to identifying these defects and describing their effects on the electro-optic and structural properties, the long-term target would be to predict the impact on the parameters of importance for photonic devices, and possibly include these predictions in their design. The work is first centered on explaining the experimental methodology. This methodology starts with the design and growth of a quantum well structure on indium phosphide, including ternary indium arsenide/phosphide quantum wells with graded arsenic/phosphor composition. These samples have then been characterized by luminescence methods (photo- and cathodoluminescence), high-resolution transmission electron microscopy, and secondary ion mass spectrometry. As one of the parameters of importance in this study, the authors have also included the doping level. The samples have been exposed to the etching plasmas for “short” durations that do not remove completely the quantum wells, but change their optical signature. No masking layer with lithographic features was involved as this work is purely oriented to study the interaction between the plasma and the samples. A significant difference in the luminescence spectra of the as-grown undoped and doped samples is observed. A mechanism describing the effect of the built-in electric field appearing as a consequence of the doping profile is proposed. This mechanism involves quantum confined Stark effect and electric-field induced carrier escape from the quantum wells. In the following part, the effects of exposure to various chlorine-based plasmas were explored. Differences are again observed between the undoped and doped samples, especially for chemistries containing silicon tetrachloride. Secondary ion

  8. Measurements of the edge current evolution and comparison with neoclassical calculations during MAST H-modes using motional Stark effect

    NARCIS (Netherlands)

    de Bock, M. F. M.; Citrin, J.; Saarelma, S.; Temple, D.; Conway, N. J.; Kirk, A.; Meyer, H.; Michael, C. A.

    2012-01-01

    Edge localized modes (ELMs), that are present in most tokamak H-(high confinement) modes, can cause significant damage to plasma facing components in fusion reactors. Controlling ELMs is considered necessary and hence it is vital to understand the underlying physics. The stability of ELMs is

  9. Measurements of the edge current evolution and comparison with neoclassical calculations during MAST H-modes using motional Stark effect

    NARCIS (Netherlands)

    Bock, de M.F.M.; Citrin, J.; Saarelma, S.; Temple, D.; Conway, N.J.; Kirk, A.; Meyer, H.; Michael, C.A.

    2012-01-01

    Edge localized modes (ELMs), that are present in most tokamak H- (high confinement) modes, can cause significant damage to plasma facing components in fusion reactors. Controlling ELMs is considered necessary and hence it is vital to understand the underlying physics. The stability of ELMs is

  10. Complex energies from real perturbation series for the LoSurdo-Stark effect in hydrogen by Borel-Pade approximants

    Energy Technology Data Exchange (ETDEWEB)

    Franceschini, V.; Grecchi, V.; Silverstone, H.J.

    1985-09-01

    The resonance energies for the hydrogen atom in an electric field, both the real and imaginary parts, have been calculated together from the real Rayleigh-Schroedinger perturbation series by Borel summation. Pade approximants were used to evaluate the Borel transform. The numerical results compare well with values obtained by the complex-coordinate variational method and by sequential use of Pade approximants.

  11. Theoretical Stark broadening parameters for spectral lines arising from the 2p5ns, 2p5np and 2p5nd electronic configurations of Mg III

    Science.gov (United States)

    Colón, C.; Moreno-Díaz, C.; Alonso-Medina, A.

    2013-10-01

    In the present work we report theoretical Stark widths and shifts calculated using the Griem semi-empirical approach, corresponding to 237 spectral lines of Mg III. Data are presented for an electron density of 1017 cm-3 and temperatures T = 0.5-10.0 (104K). The matrix elements used in these calculations have been determined from 23 configurations of Mg III: 2s22p6, 2s22p53p, 2s22p54p, 2s22p54f and 2s22p55f for even parity and 2s22p5ns (n = 3-6), 2s22p5nd (n = 3-9), 2s22p55g and 2s2p6np (n = 3-8) for odd parity. For the intermediate coupling (IC) calculations, we use the standard method of least-squares fitting from experimental energy levels by means of the Cowan computer code. Also, in order to test the matrix elements used in our calculations, we present calculated values of 70 transition probabilities of Mg III spectral lines and 14 calculated values of radiative lifetimes of Mg III levels. There is good agreement between our calculations and experimental radiative lifetimes. Spectral lines of Mg III are relevant in astrophysics and also play an important role in the spectral analysis of laboratory plasma. Theoretical trends of the Stark broadening parameter versus the temperature for relevant lines are presented. No values of Stark parameters can be found in the bibliography.

  12. The STARK-B database VAMDC node: a repository for spectral line broadening and shifts due to collisions with charged particles

    Science.gov (United States)

    Sahal-Bréchot, S.; Dimitrijević, M. S.; Moreau, N.; Ben Nessib, N.

    2015-05-01

    Accurate spectroscopic diagnostics and modeling require the knowledge of numerous collisional line profiles. Access to such data via an online database has become indispensable. The STARK-B database is aimed at meeting these needs for widths and shifts of isolated lines of neutral and ionized elements due to electron and ion impacts. This database of the Paris Observatory is a result of scientific cooperation between S Sahal-Bréchot (LERMA) and M S Dimitrijević (AOB). Access to it is free, and it was opened online at the end of 2008. STARK-B is a node of the Virtual Atomic and Molecular Data Centre (VAMDC) and thus complies with VAMDC and Virtual Observatory standards. VAMDC is a European Union-funded collaboration among groups involved in the generation and use of interoperable atomic and molecular data. STARK-B now contains all our semiclassical-perturbation (SCP) calculated data for more than 123 neutral or ionized elements as published in international refereed journals. It is devoted to modeling and spectroscopic diagnostics of stellar atmospheres and envelopes, laboratory plasmas, laser equipment, and technological plasmas. Hence, the range of temperatures and densities covered by the tables is broad and depends on the ionization degree of the radiating atom. The modified semiempirical (MSE) results of calculations have begun to be implemented. In this paper, we highlight the key points of the method and the assumptions used in the calculations, which have lately been revisited. Then we present the database and its recent developments, as well as our ongoing work and our plans for the future.

  13. The STARK-B database VAMDC node: a repository for spectral line broadening and shifts due to collisions with charged particles

    International Nuclear Information System (INIS)

    Sahal-Bréchot, S; Moreau, N; Dimitrijević, M S; Nessib, N Ben

    2015-01-01

    Accurate spectroscopic diagnostics and modeling require the knowledge of numerous collisional line profiles. Access to such data via an online database has become indispensable. The STARK-B database is aimed at meeting these needs for widths and shifts of isolated lines of neutral and ionized elements due to electron and ion impacts. This database of the Paris Observatory is a result of scientific cooperation between S Sahal-Bréchot (LERMA) and M S Dimitrijević (AOB). Access to it is free, and it was opened online at the end of 2008. STARK-B is a node of the Virtual Atomic and Molecular Data Centre (VAMDC) and thus complies with VAMDC and Virtual Observatory standards. VAMDC is a European Union-funded collaboration among groups involved in the generation and use of interoperable atomic and molecular data. STARK-B now contains all our semiclassical-perturbation (SCP) calculated data for more than 123 neutral or ionized elements as published in international refereed journals. It is devoted to modeling and spectroscopic diagnostics of stellar atmospheres and envelopes, laboratory plasmas, laser equipment, and technological plasmas. Hence, the range of temperatures and densities covered by the tables is broad and depends on the ionization degree of the radiating atom. The modified semiempirical (MSE) results of calculations have begun to be implemented. In this paper, we highlight the key points of the method and the assumptions used in the calculations, which have lately been revisited. Then we present the database and its recent developments, as well as our ongoing work and our plans for the future. (paper)

  14. Theoretical Stark widths and shifts of spectral lines of 2p5nf and 2p55g configurations of Mg III

    International Nuclear Information System (INIS)

    Moreno-Díaz, Cristina; Alonso-Medina, Aurelia; Colón, Cristóbal

    2014-01-01

    In this paper, we report theoretical Stark widths and shifts calculated using the Griem semi-empirical approach, which corresponds to 111 spectral lines of Mg III. The values of these Stark broadening parameters of spectral lines that arise from levels of 2p 5 nf and 2p 5 5g configurations of Mg III are presented in the literature for the first time. The aim of this work is to provide values to estimate the electron density of plasma Mg III in astrophysics and industrial applications. The data are presented for the temperatures T = 0.5–10.0 (10 4 K) and for an electron density of 10 17 cm −3 . The matrix of elements used in these calculations has been determined from 23 configurations of Mg III: 2s 2 2p 6 , 2s 2 2p 5 3p, 2s 2 2p 5 4p, 2s 2 2p 5 4f and 2s 2 2p 5 5f for the even parity and 2s 2 2p 5 ns (n = 3–6), 2s 2 2p 5 nd (n = 3–9), 2s 2 2p 5 5g and 2s2p 6 np (n = 3–8) for the odd parity. For the intermediate coupling calculations, we use the standard method of least square fitting from experimental energy levels by means of Cowan’s computer code. Lines with wavelengths of 134.6460, 135.2800, 189.0380, 190.0043, 192.8424, 408.2939 and 409.4375 nm have high probabilities and also have high values of broadening. Therefore, these lines can be used in some applications. A common regularity for the Stark width of the 189.038 nm spectral line of Mg III is discussed. (paper)

  15. Investigation of optical effects in silicon quantum dots by using an empirical pseudopotential method

    Energy Technology Data Exchange (ETDEWEB)

    Ghoshal, S. K.; Sahar, M. R.; Rohani, M. S. [Universiti Teknologi Malaysia, Johor (Malaysia)

    2011-02-15

    A computer simulation using a pseudopotential approach has been carried out to investigate the band gap as a function of the size and the shape of small silicon (Si) dots having 3 to 44 atoms per dot with and without surface passivation. We used an empirical pseudo-potential Hamiltonian, a plane-wave basis expansion and a basic tetrahedral structure with undistorted local bonding configurations. In our simulation, the structures of the quantum dots were relaxed and optimized before and after passivation. We found that the gap increased more for an oxygenated surface than a hydrogenated one. Thus, both quantum confinement and surface passivation determined the optical and the electronic properties of Si quantum dots. Visible luminescence was probably due to radiative recombination of electrons and holes in the quantum-confined nanostructures. The effect of passivation of the surface dangling bonds by hydrogen and oxygen atoms and the role of surface states on the gap energy was also examined. We investigated the entire energy spectrum starting from the very low-lying ground state to the very high-lying excited states. The results for the sizes of the gap, the density of states, the oscillator strength and the absorption coefficient as functions of the size are presented. The importance of the confinement and the role of surface passivation on the optical effects are also discussed.

  16. Photoconductivity, photoluminescence and optical Kerr nonlinear effects in zinc oxide films containing chromium nanoclusters

    International Nuclear Information System (INIS)

    Torres-Torres, C.; García-Cruz, M.L.; Castañeda, L.; Rangel Rojo, R.; Tamayo-Rivera, L.; Maldonado, A.; Avendaño-Alejo, M.

    2012-01-01

    Chromium doped zinc oxide thin solid films were deposited on soda–lime glass substrates. The photoconductivity of the material and its influence on the optical behavior was evaluated. A non-alkoxide sol–gel synthesis approach was used for the preparation of the samples. An enhancement of the photoluminescence response exhibited by the resulting photoconductive films with embedded chromium nanoclusters is presented. The modification in the photoconduction induced by a 445 nm wavelength was measured and then associated with the participation of the optical absorptive response. In order to investigate the third order optical nonlinearities of the samples, a standard time-resolved Optical Kerr Gate configuration with 80 fs pulses at 830 nm was used and a quasi-instantaneous pure electronic nonlinearity without the contribution of nonlinear optical absorption was observed. We estimate that from the inclusion of Cr nanoclusters into the sample results a strong optical Kerr effect originated by quantum confinement. The large photoluminescence response and the important refractive nonlinearity of the photoconductive samples seem to promise potential applications for the development of multifunctional all-optical nanodevices. - Highlights: ► Enhancement in photoluminescence for chromium doped zinc oxide films is presented. ► A strong and ultrafast optical Kerr effect seems to result from quantum confinement. ► Photoconductive properties for optical and optoelectronic functions were observed.

  17. Photoconductivity, photoluminescence and optical Kerr nonlinear effects in zinc oxide films containing chromium nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Torres, C., E-mail: crstorres@yahoo.com.mx [Seccion de Estudios de Posgrado e Investigacion, ESIME-Z, Instituto Politecnico Nacional, Mexico, DF 07738 (Mexico); Garcia-Cruz, M.L. [Centro de Investigacion en Dispositivos Semiconductores, Benemerita Universidad Autonoma de Puebla, A. P. J-48, Puebla 72570, Mexico (Mexico); Castaneda, L., E-mail: luisca@sirio.ifuap.buap.mx [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, A. P. J-48, Puebla 72570, Mexico (Mexico); Rangel Rojo, R. [CICESE/Depto. de Optica, A. P. 360, Ensenada, BC 22860 (Mexico); Tamayo-Rivera, L. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Mexico, DF 01000 (Mexico); Maldonado, A. [Depto. de Ing. Electrica, CINVESTAV IPN-SEES, A. P. 14740, Mexico DF 07000 (Mexico); Avendano-Alejo, M., E-mail: imax_aa@yahoo.com.mx [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, A. P. 70-186, 04510, DF (Mexico); and others

    2012-04-15

    Chromium doped zinc oxide thin solid films were deposited on soda-lime glass substrates. The photoconductivity of the material and its influence on the optical behavior was evaluated. A non-alkoxide sol-gel synthesis approach was used for the preparation of the samples. An enhancement of the photoluminescence response exhibited by the resulting photoconductive films with embedded chromium nanoclusters is presented. The modification in the photoconduction induced by a 445 nm wavelength was measured and then associated with the participation of the optical absorptive response. In order to investigate the third order optical nonlinearities of the samples, a standard time-resolved Optical Kerr Gate configuration with 80 fs pulses at 830 nm was used and a quasi-instantaneous pure electronic nonlinearity without the contribution of nonlinear optical absorption was observed. We estimate that from the inclusion of Cr nanoclusters into the sample results a strong optical Kerr effect originated by quantum confinement. The large photoluminescence response and the important refractive nonlinearity of the photoconductive samples seem to promise potential applications for the development of multifunctional all-optical nanodevices. - Highlights: Black-Right-Pointing-Pointer Enhancement in photoluminescence for chromium doped zinc oxide films is presented. Black-Right-Pointing-Pointer A strong and ultrafast optical Kerr effect seems to result from quantum confinement. Black-Right-Pointing-Pointer Photoconductive properties for optical and optoelectronic functions were observed.

  18. Confinement and surface effects on the physical properties of rhombohedral-shape hematite (α-Fe_2O_3) nanocrystals

    International Nuclear Information System (INIS)

    Luna, Carlos; Cuan-Guerra, Aída D.; Barriga-Castro, Enrique D.; Núñez, Nuria O.; Mendoza-Reséndez, Raquel

    2016-01-01

    Highlights: • Uniform rhombohedral hematite nanocrystals (RHNCs) have been obtained. • A detailed formation mechanism of these HNCS has been proposed. • Phonon confinement effects were revealed in the RHNCS vibrational bands. • Quantum confinement effects on the optical and electronic properties were found. - Abstract: Morphological, microstructural and vibrational properties of hematite (α-Fe_2O_3) nanocrystals with a rhombohedral shape and rounded edges, obtained by forced hydrolysis of iron(III) solutions under a fast nucleation, have been investigated in detail as a function of aging time. These studies allowed us to propose a detailed formation mechanism and revealed that these nanocrystals are composed of four {104} side facets, two {110} faces at the edges of the long diagonal of the nanocrystals and two {−441} facets as the top and bottom faces. Also, the presence of nanoscopic pores and fissures was evidenced. The vibrational bands of such nanocrystals were shifted to lower frequencies in comparison with bulk hematite ones as the nanocrystal size was reduced due to phonon confinement effects. Also, the indirect and direct transition band gaps displayed interesting dependences on the aging time arising from quantum confinement and surface effects

  19. Effect of the anisotropy of the electron g-factor in spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong 4331 (Bangladesh); Gray, E. MacA. [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

    2010-02-15

    Spin polarization in the presence of an external magnetic field and electric bias in quantum confined semiconductor structures has been studied by time- and polarization-resolved spectrometry. From measurements with angular variations of the magnetic field from the Voigt configuration (VC) it was found that both the frequency ({Omega}) and decay rate ({beta}) of the oscillatory component of the polarization increase with variation of the angle from the VC. Their dependences are discussed based on the electron spin dephasing related to the spread of the electron g-factor (g{sub e}) (i.e. unequal values of the longitudinal (g{sub e||}) and transverse (g{sub e}-perpendicular) components of g{sub e}) and the exchange interaction between the electron and hole spins. It is demonstrated that the increase in {Omega} upon deviation of the magnetic field from the VC relates to the anisotropy of g{sub e} (g{sub e||} and g{sub e}-perpendicular) resulting from the quantum confinement effect. However, the angular dependence on {beta} is related to the residual exchange interaction between the electron spin and rapidly relaxing hole spin.

  20. Confinement and surface effects on the physical properties of rhombohedral-shape hematite (α-Fe{sub 2}O{sub 3}) nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Luna, Carlos, E-mail: carlos.lunacd@uanl.edu.mx [Universidad Autónoma de Nuevo León (UANL), Av. Universidad S/N, San Nicolás de los Garza, Nuevo León 66455 (Mexico); Cuan-Guerra, Aída D. [Universidad Autónoma de Nuevo León (UANL), Av. Universidad S/N, San Nicolás de los Garza, Nuevo León 66455 (Mexico); Barriga-Castro, Enrique D. [Centro de Investigación en Química Aplicada (CIQA), Blvd. Enrique Reyna Hermosillo No. 140, Saltillo, 25294 Coahuila (Mexico); Núñez, Nuria O. [Instituto de Ciencia de Materiales de Sevilla (ICMS), CSIC-US, Avda. Americo Vespucio n° 49, Isla de la Cartuja, 41092 Sevilla (Spain); Mendoza-Reséndez, Raquel [Universidad Autónoma de Nuevo León (UANL), Av. Universidad S/N, San Nicolás de los Garza, Nuevo León 66455 (Mexico)

    2016-08-15

    Highlights: • Uniform rhombohedral hematite nanocrystals (RHNCs) have been obtained. • A detailed formation mechanism of these HNCS has been proposed. • Phonon confinement effects were revealed in the RHNCS vibrational bands. • Quantum confinement effects on the optical and electronic properties were found. - Abstract: Morphological, microstructural and vibrational properties of hematite (α-Fe{sub 2}O{sub 3}) nanocrystals with a rhombohedral shape and rounded edges, obtained by forced hydrolysis of iron(III) solutions under a fast nucleation, have been investigated in detail as a function of aging time. These studies allowed us to propose a detailed formation mechanism and revealed that these nanocrystals are composed of four {104} side facets, two {110} faces at the edges of the long diagonal of the nanocrystals and two {−441} facets as the top and bottom faces. Also, the presence of nanoscopic pores and fissures was evidenced. The vibrational bands of such nanocrystals were shifted to lower frequencies in comparison with bulk hematite ones as the nanocrystal size was reduced due to phonon confinement effects. Also, the indirect and direct transition band gaps displayed interesting dependences on the aging time arising from quantum confinement and surface effects.

  1. Investigation of non thermal effects from the Dα line wings in edge plasmas

    International Nuclear Information System (INIS)

    Marandet, Y.; Godbert-Mouret, L.; Koubiti, M.; Stamm, R.; Capes, H.; Guirlet, R.

    2002-01-01

    The far wings of intense Dα lines measured at the edge of the Tore Supra Tokamak are found to exhibit a power-law behavior. The characteristic exponent is not far from two. Since the low density rules out thermal Stark broadening, we discuss non thermal effects which may arise from the edge plasma drift-wave turbulence. We suggest that both the Stark and the Doppler profile could be affected by the turbulence

  2. The effect of composition on the formation of light-emitting Si nanostructures in SiOx layers on irradiation with swift heavy ions

    International Nuclear Information System (INIS)

    Kachurin, G. A.; Cherkova, S. G.; Marin, D. V.; Kesler, V. G.; Skuratov, V. A.; Cherkov, A. G.

    2011-01-01

    The SiO x layers different in composition (0 14 cm −2 to stimulate the formation of light-emitting Si nanostructures. The irradiation gives rise to a photoluminescence band with the parameters dependent on x. As the Si content is increased, the photoluminescence is first enhanced, with the peak remaining arranged near the wavelength λ ≈ 600 nm, and then the peak shifts to λ ≈ 800 nm. It is concluded that the emission sources are quantum-confined nanoprecipitates formed by disproportionation of SiO x in ion tracks due to profound ionization losses. Changes in the photoluminescence spectrum with increasing x are attributed firstly to the increase in the probability of formation of nanoprecipitates and then to the increase in their dimensions; the latter effect is accompanied with a shift of the emission band to longer wavelengths. The subsequent quenching of photoluminescence is interpreted as a result of the removal of quantum confinement in nanoprecipitates and their coagulation.

  3. The effect of composition on the formation of light-emitting Si nanostructures in SiO{sub x} layers on irradiation with swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G. A., E-mail: kachurin@isp.nsc.ru; Cherkova, S. G.; Marin, D. V.; Kesler, V. G. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Skuratov, V. A. [Joint Institute for Nuclear Research (Russian Federation); Cherkov, A. G. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-03-15

    The SiO{sub x} layers different in composition (0 < x < 2) are irradiated with Xe ions with the energy 167 MeV and the dose 10{sup 14} cm{sup -2} to stimulate the formation of light-emitting Si nanostructures. The irradiation gives rise to a photoluminescence band with the parameters dependent on x. As the Si content is increased, the photoluminescence is first enhanced, with the peak remaining arranged near the wavelength {lambda} Almost-Equal-To 600 nm, and then the peak shifts to {lambda} Almost-Equal-To 800 nm. It is concluded that the emission sources are quantum-confined nanoprecipitates formed by disproportionation of SiO{sub x} in ion tracks due to profound ionization losses. Changes in the photoluminescence spectrum with increasing x are attributed firstly to the increase in the probability of formation of nanoprecipitates and then to the increase in their dimensions; the latter effect is accompanied with a shift of the emission band to longer wavelengths. The subsequent quenching of photoluminescence is interpreted as a result of the removal of quantum confinement in nanoprecipitates and their coagulation.

  4. Interface effects on acceptor qubits in silicon and germanium

    International Nuclear Information System (INIS)

    Abadillo-Uriel, J C; Calderón, M J

    2016-01-01

    Dopant-based quantum computing implementations often require the dopants to be situated close to an interface to facilitate qubit manipulation with local gates. Interfaces not only modify the energies of the bound states but also affect their symmetry. Making use of the successful effective mass theory we study the energy spectra of acceptors in Si or Ge taking into account the quantum confinement, the dielectric mismatch and the central cell effects. The presence of an interface puts constraints to the allowed symmetries and leads to the splitting of the ground state in two Kramers doublets (Mol et al 2015 Appl. Phys. Lett. 106 203110). Inversion symmetry breaking also implies parity mixing which affects the allowed optical transitions. Consequences for acceptor qubits are discussed. (paper)

  5. Piezo-Phototronic Effect in a Quantum Well Structure.

    Science.gov (United States)

    Huang, Xin; Du, Chunhua; Zhou, Yongli; Jiang, Chunyan; Pu, Xiong; Liu, Wei; Hu, Weiguo; Chen, Hong; Wang, Zhong Lin

    2016-05-24

    With enhancements in the performance of optoelectronic devices, the field of piezo-phototronics has attracted much attention, and several theoretical works have been reported based on semiclassical models. At present, the feature size of optoelectronic devices are rapidly shrinking toward several tens of nanometers, which results in the quantum confinement effect. Starting from the basic piezoelectricity equation, Schrödinger equation, Poisson equation, and Fermi's golden rule, a self-consistent theoretical model is proposed to study the piezo-phototronic effect in the framework of perturbation theory in quantum mechanics. The validity and universality of this model are well-proven with photoluminescence measurements in a single GaN/InGaN quantum well and multiple GaN/InGaN quantum wells. This study provides important insight into the working principle of nanoscale piezo-phototronic devices as well as guidance for the future device design.

  6. Mid-infrared signatures of hydroxyl containing water clusters: Infrared laser Stark spectroscopy of OH–H{sub 2}O and OH(D{sub 2}O){sub n} (n = 1-3)

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez, Federico J. [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); INFIQC, Dpto. de Fisicoquímica, Facultad de Ciencias Químicas, Centro Láser de Ciencias Moleculares, Universidad Nacional de Córdoba, Ciudad Universitaria, Pabellón, X5000HUA Córdoba (Argentina); Brice, Joseph T.; Leavitt, Christopher M.; Liang, Tao; Douberly, Gary E., E-mail: douberly@uga.edu [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Raston, Paul L. [Department of Chemistry and Biochemistry, James Madison University, Harrisonburg, Virginia 22807 (United States); Pino, Gustavo A. [INFIQC, Dpto. de Fisicoquímica, Facultad de Ciencias Químicas, Centro Láser de Ciencias Moleculares, Universidad Nacional de Córdoba, Ciudad Universitaria, Pabellón, X5000HUA Córdoba (Argentina)

    2015-10-28

    Small water clusters containing a single hydroxyl radical are synthesized in liquid helium droplets. The OH–H{sub 2}O and OH(D{sub 2}O){sub n} clusters (n = 1-3) are probed with infrared laser spectroscopy in the vicinity of the hydroxyl radical OH stretch vibration. Experimental band origins are qualitatively consistent with ab initio calculations of the global minimum structures; however, frequency shifts from isolated OH are significantly over-predicted by both B3LYP and MP2 methods. An effective Hamiltonian that accounts for partial quenching of electronic angular momentum is used to analyze Stark spectra of the OH–H{sub 2}O and OH–D{sub 2}O binary complexes, revealing a 3.70(5) D permanent electric dipole moment. Computations of the dipole moment are in good agreement with experiment when large-amplitude vibrational averaging is taken into account. Polarization spectroscopy is employed to characterize two vibrational bands assigned to OH(D{sub 2}O){sub 2}, revealing two nearly isoenergetic cyclic isomers that differ in the orientation of the non-hydrogen-bonded deuterium atoms relative to the plane of the three oxygen atoms. The dipole moments for these clusters are determined to be approximately 2.5 and 1.8 D for “up-up” and “up-down” structures, respectively. Hydroxyl stretching bands of larger clusters containing three or more D{sub 2}O molecules are observed shifted approximately 300 cm{sup −1} to the red of the isolated OH radical. Pressure dependence studies and ab initio calculations imply the presence of multiple cyclic isomers of OH(D{sub 2}O){sub 3}.

  7. Understanding noise suppression in heterojunction field-effect transistors

    International Nuclear Information System (INIS)

    Green, F.

    1996-01-01

    Full text: The enhanced transport properties displayed by quantum-well-confined, two-dimensional, electron systems underpin the success of heterojunction, field-effect transistors. At cryogenic temperatures, these devices exhibit impressive mobilities and, as a result, high signal gain and low noise. Conventional wisdom has it that the same favourable conditions also hold for normal room-temperature operation. In that case, however, high mobilities are precluded by abundant electron-phonon scattering. Our recent study of nonequilibrium current noise shows that quantum confinement, not high mobility, is the principal source of noise in these devices; this opens up new and exciting opportunities in low-noise transistor design. As trends in millimetre-wave technology push frequencies beyond 100 GHz, it is essential to develop a genuine understanding of noise processes in heterojunction devices

  8. Slowing and cooling of heavy or light (even with a tiny electric dipole moment) polar molecules using a novel, versatile electrostatic Stark decelerator.

    Science.gov (United States)

    Wang, Qin; Hou, Shunyong; Xu, Liang; Yin, Jianping

    2016-02-21

    To meet some demands for realizing precise measurements of an electric dipole moment of electron (eEDM) and examining cold collisions or cold chemical physics, we have proposed a novel, versatile electrostatic Stark decelerator with an array of true 3D electric potential wells, which are created by a series of horizontally-oriented, U-shaped electrodes with time-sequence controlling high voltages (± HV) and two guiding electrodes with a constant voltage. We have calculated the 2D electric field distribution, the Stark shifts of the four lowest rotational sub-levels of PbF molecules in the X1(2)Π1/2(v = 0) electronic and vibrational ground states as well as the population in the different rotational levels. We have discussed the 2D longitudinal and transverse phase-space acceptances of PbF molecules in our decelerator. Subsequently, we have simulated the dynamic processes of the decelerated PbF molecules using the 3D Monte-Carlo method, and have found that a supersonic PbF beam with a velocity of 300 m s(-1) can be efficiently slowed to about 5 m s(-1), which will greatly enhance the sensitivities to research a parity violation and measure an eEDM. In addition, we have investigated the dependences of the longitudinal velocity spread, longitudinal temperature and bunching efficiency on both the number of guiding stages and high voltages, and found that after bunching, a cold packet of PbF molecules in the J = 7/2, MΩ = -7/4 state with a longitudinal velocity spread of 0.69 m s(-1) (corresponding to a longitudinal temperature of 2.35 mK) will be produced by our high-efficient decelerator, which will generate a high energy-resolution molecular beam for studying cold collision physics. Finally, our novel decelerator can also be used to efficiently slow NO molecules with a tiny electric dipole moment (EDM) of 0.16 D from 315 m s(-1) to 28 m s(-1). It is clear that our proposed new decelerator has a good slowing performance and experimental feasibility as well as wide

  9. Electric-dipole moment of CaF by molecular-beam, laser-rf, double-resonance study of Stark splittings

    International Nuclear Information System (INIS)

    Childs, W.J.; Goodman, L.S.; Nielsen, U.; Pfeufer, V.

    1984-01-01

    The electronic structure of diatomic molecules is much more complex for open-shell sytems (radicals) than for the normal closed-shell systems, and the development of an adequate theoretical understanding will require a substantial upgrading of experimental knowledge in both quality and quantity. The alkaline-earth monohalide family of radicals, with only a single electron outside closed-shell cores, would appear to be a logical starting point for such studies, and there has been a great increase in work in this area in the last few years in spite of the special difficulties of working with free radicals. As the work of measuring the vibrational and rotational structure of the electronic states has become more complete, attention has turned to study of the much weaker spin-rotation and hyperfine interactions. Within the last three years, these interactions have been studied systematically at high precision in the calcium monohalide family with the molecular-beam, laser-rf double-resonance technique. The same method has now been modified and extended to make possible measurement of the electric-dipole moments of these molecules through observation of the Stark splittings of radiofrequency transitions. It is hoped that when considered together, the several types of data will make it possible to understand the ground-state electronic wave functions of these molecules at least qualitatively. 2 figures

  10. Study of early laser-induced plasma dynamics: Transient electron density gradients via Thomson scattering and Stark Broadening, and the implications on laser-induced breakdown spectroscopy measurements

    International Nuclear Information System (INIS)

    Diwakar, P.K.; Hahn, D.W.

    2008-01-01

    To further develop laser-induced breakdown spectroscopy (LIBS) as an analytical technique, it is necessary to better understand the fundamental processes and mechanisms taking place during the plasma evolution. This paper addresses the very early plasma dynamics (first 100 ns) using direct plasma imaging, light scattering, and transmission measurements from a synchronized 532-nm probe laser pulse. During the first 50 ns following breakdown, significant Thomson scattering was observed while the probe laser interacted with the laser-induced plasma. The Thomson scattering was observed to peak 15-25 ns following plasma initiation and then decay rapidly, thereby revealing the highly transient nature of the free electron density and plasma equilibrium immediately following breakdown. Such an intense free electron density gradient is suggestive of a non-equilibrium, free electron wave generated by the initial breakdown and growth processes. Additional probe beam transmission measurements and electron density measurements via Stark broadening of the 500.1-nm nitrogen ion line corroborate the Thomson scattering observations. In concert, the data support the finding of a highly transient plasma that deviates from local thermodynamic equilibrium (LTE) conditions during the first tens of nanoseconds of plasma lifetime. The implications of this early plasma transient behavior are discussed in the context of plasma-analyte interactions and the role on LIBS measurements

  11. Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors?

    KAUST Repository

    Fahad, Hossain M.

    2012-06-27

    Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve appreciable amount of current necessary for high performance computation causing an area penalty and compromised functionality. Here we show that a FET with a nanotube architecture and core-shell gate stacks is capable of achieving the desirable leakage characteristics of the nanowire FET while generating a much larger drive current with area efficiency. The core-shell gate stacks of silicon nanotube FETs tighten the electrostatic control and enable volume inversion mode operation leading to improved short channel behavior and enhanced performance. Our comparative study is based on semi-classical transport models with quantum confinement effects which offers new opportunity for future generation high performance computation.

  12. Effect of Current Density on Optical Properties of Anisotropic Photoelectrochemical Etched Silicon (110)

    Science.gov (United States)

    Amirhoseiny, M.; Hassan, Z.; Ng, S. S.

    2012-08-01

    Photoelectrochemical etched Si layers were prepared on n-type (110) oriented silicon wafer. The photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopies of etched Si (110) at two different current densities were studied. Both samples showed PL peak in the visible spectral range situated from 650 nm to 750 nm. The corresponding changes in Raman spectra at different current density are discussed. The blue shift in the PL and Raman peaks is consequent of the quantum confinement effect and defect states of surface Si nanocrystallites complexes and hydrogen atoms of the photoelectrochemical etched Si (110) samples. The attenuated total reflection (ATR) results show both hydrogen and oxygen related IR modes in the samples which can be used to explain the PL effect.

  13. Characterization of hollow cathode fall field strength measured by Doppler-free two-photon optogalvanic spectroscopy via Stark splitting of the 2S level of hydrogen and deuterium

    Energy Technology Data Exchange (ETDEWEB)

    Perez, C; De la Rosa, M I; Gruetzmacher, K, E-mail: concha@opt.uva.e [Universidad de Valladolid, Facultad de Ciencias, 47071 Valladolid (Spain)

    2010-05-01

    Doppler-free two-photon optogalvanic spectroscopy has been applied to measure the strong electric field strength and the cathode fall characteristics of hollow cathode discharges operated in hydrogen and deuterium via the Stark splitting of the 2S level of atomic hydrogen isotopes. In this paper we show similarities and differences in the tendencies of the cathode fall characteristics of hydrogen and deuterium in a wide range of identical discharge parameters.

  14. Characterization of hollow cathode fall field strength measured by Doppler-free two-photon optogalvanic spectroscopy via Stark splitting of the 2S level of hydrogen and deuterium

    International Nuclear Information System (INIS)

    Perez, C; De la Rosa, M I; Gruetzmacher, K

    2010-01-01

    Doppler-free two-photon optogalvanic spectroscopy has been applied to measure the strong electric field strength and the cathode fall characteristics of hollow cathode discharges operated in hydrogen and deuterium via the Stark splitting of the 2S level of atomic hydrogen isotopes. In this paper we show similarities and differences in the tendencies of the cathode fall characteristics of hydrogen and deuterium in a wide range of identical discharge parameters.

  15. Vacuum-induced Stark shifts for quantum logic using a collective system in a high-quality dispersive cavity

    International Nuclear Information System (INIS)

    Gabris, A.; Agarwal, G.S.

    2005-01-01

    A collective system of atoms in a high-quality cavity can be described by a nonlinear interaction which arises due to the Lamb shift of the energy levels due to the cavity vacuum [Agarwal et al., Phys. Rev. A 56, 2249 (1997)]. We show how this collective interaction can be used to perform quantum logic. In particular we produce schemes to realize controlled-NOT gates not only for two-qubit but also for three-qubit systems. We also discuss realizations of Toffoli gates. Our effective Hamiltonian is also realized in other systems such as trapped ions or magnetic molecules

  16. Quantum theory of the optical and electronic properties of semiconductors

    CERN Document Server

    Haug, Hartmut

    2009-01-01

    This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...

  17. Effect of organic materials used in the synthesis on the emission from CdSe quantum dots

    Science.gov (United States)

    Lee, Jae-Won; Yang, Ho-Soon; Hong, K. S.; Kim, S. M.

    2013-12-01

    Quantum-dot nanocrystals have particular optical properties due to the quantum confinement effect and the surface effect. This study focuses on the effect of surface conditions on the emission from quantum dots. The quantum dots prepared with 1-hexadecylamine (HDA) in the synthesis show strong emission while the quantum dots prepared without HDA show weak emission, as well as emission from surface energy traps. The comparison of the X-ray patterns of these two sets of quantum dots reveals that HDA forms a layer on the surface of quantum dot during the synthesis. This surface passivation with a layer of HDA reduces surface energy traps, therefore the emission from surface trap levels is suppressed in the quantum dots synthesized with HDA.

  18. Precise Control of Quantum Confinement in Cesium Lead Halide Perovskite Quantum Dots via Thermodynamic Equilibrium.

    Science.gov (United States)

    Dong, Yitong; Qiao, Tian; Kim, Doyun; Parobek, David; Rossi, Daniel; Son, Dong Hee

    2018-05-09

    Cesium lead halide (CsPbX 3 ) nanocrystals have emerged as a new family of materials that can outperform the existing semiconductor nanocrystals due to their superb optical and charge-transport properties. However, the lack of a robust method for producing quantum dots with controlled size and high ensemble uniformity has been one of the major obstacles in exploring the useful properties of excitons in zero-dimensional nanostructures of CsPbX 3 . Here, we report a new synthesis approach that enables the precise control of the size based on the equilibrium rather than kinetics, producing CsPbX 3 quantum dots nearly free of heterogeneous broadening in their exciton luminescence. The high level of size control and ensemble uniformity achieved here will open the door to harnessing the benefits of excitons in CsPbX 3 quantum dots for photonic and energy-harvesting applications.

  19. Comment on 'Ultrafast photoluminescence in quantum-confined silicon nanocrystals arises from an amorphous surface layer'

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina; Ondič, Lukáš; Pelant, Ivan

    2015-01-01

    Roč. 2, č. 3 (2015), s. 454-455 ISSN 2330-4022 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon nanocrystals, ultrafast luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.404, year: 2015

  20. Nitride-based Quantum-Confined Structures for Ultraviolet-Visible Optical Devices on Silicon Substrates

    KAUST Repository

    Janjua, Bilal

    2017-01-01

    quality GaN, InGaN and AlGaN Qdisks-in-NWs based on careful optimization of the growth parameters, coupled with a meticulous layer structure and active region design. The NWs were grown, catalyst-free, using plasma assisted molecular beam epitaxy (PAMBE

  1. "In situ" extraction of essential oils by use of Dean-Stark glassware and a Vigreux column inside a microwave oven: a procedure for teaching green analytical chemistry.

    Science.gov (United States)

    Chemat, Farid; Perino-Issartier, Sandrine; Petitcolas, Emmanuel; Fernandez, Xavier

    2012-08-01

    One of the principal objectives of sustainable and green processing development remains the dissemination and teaching of green chemistry in colleges, high schools, and academic laboratories. This paper describes simple glassware that illustrates the phenomenon of extraction in a conventional microwave oven as energy source and a process for green analytical chemistry. Simple glassware comprising a Dean-Stark apparatus (for extraction of aromatic plant material and recovery of essential oils and distilled water) and a Vigreux column (as an air-cooled condenser inside the microwave oven) was designed as an in-situ extraction vessel inside a microwave oven. The efficiency of this experiment was validated for extraction of essential oils from 30 g fresh orange peel, a by-product in the production of orange juice. Every laboratory throughout the world can use this equipment. The microwave power is 100 W and the irradiation time 15 min. The method is performed at atmospheric pressure without added solvent or water and furnishes essential oils similar to those obtained by conventional hydro or steam distillation. By use of GC-MS, 22 compounds in orange peel were separated and identified; the main compounds were limonene (72.1%), β-pinene (8.4%), and γ-terpinene (6.9%). This procedure is appropriate for the teaching laboratory, does not require any special microwave equipment, and enables the students to learn the skills of extraction, and chromatographic and spectroscopic analysis. They are also exposed to a dramatic visual example of rapid, sustainable, and green extraction of an essential oil, and are introduced to successful sustainable and green analytical chemistry.

  2. Effects of precursors on the crystal structure and photoluminescence of CdS nanocrystalline

    International Nuclear Information System (INIS)

    Fu Zuoling; Zhou Shihong; Shi Jinsheng; Zhang Siyuan

    2005-01-01

    A series of cadmium sulfide (CdS) nanocrystalline were synthesized by precipitation from a mixture of aqueous solutions of cadmium salts and sulfur salts without adding any surface-termination agent. Their crystal structures and particle sizes were determined by X-ray diffraction (XRD). The CdS nanocrystalline precipitated from different precursors exhibited three cases: cubic phase, hexagonal phase and a hybrid of cubic and hexagonal phases. The photoluminescence (PL) of cadmium salt precursors and CdS nanocrystalline is also analyzed. Similar spectral band structure of cadmium salt precursors and CdS nanocrystalline is found. The PL of 3.4, 2.4 and 2.0 nm sized CdS nanocrystalline with the same crystal structure indicated quantum confinement effect

  3. Fabrication of InN/InGaN multiple quantum well structures by RF-MBE

    Energy Technology Data Exchange (ETDEWEB)

    Kurouchi, M.; Muto, D.; Takado, S.; Araki, T.; Nanishi, Y. [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Na, H.; Naoi, H. [Center for Promotion of The 21st Century COE Program, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Miyajima, T. [Optoelectronics Laboratory, Materials Laboratories, Sony Corporation, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

    2006-06-15

    InN/InGaN multiple quantum well structures have been fabricated on InN templates grown on (0 0 0 1) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. The structures were confirmed by X-ray diffraction, and satellite peaks up to the 3rd order were observed. From InN/InGaN multiple quantum well structures with different well widths, photoluminescence (PL) emission from the well layers was observed at 77 K, and the PL peak energy slightly blueshifted with decreasing the well width. This dependence can be explained by combined effects of quantum size effect, quantum confined Stark effect, and band filling effect. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Influence of image charge effect on exciton fine structure in an organic-inorganic quantum well material

    Energy Technology Data Exchange (ETDEWEB)

    Takagi, Hidetsugu; Kunugita, Hideyuki; Ema, Kazuhiro [Department of Physics, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Sato, Mikio; Takeoka, Yuko [Department of Materials and Life Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

    2013-12-04

    We have investigated experimentally excitonic properties in organic-inorganic hybrid multi quantum well crystals, (C{sub 4}H{sub 9}NH{sub 3}){sub 2}PbBr{sub 4} and (C{sub 6}H{sub 5}−C{sub 2}H{sub 4}NH{sub 3}){sub 2}PbBr{sub 4}, by measuring photoluminescence, reflectance, photoluminescence excitation spectra. In these materials, the excitonic binding energies are enhanced not only by quantum confinement effect (QCE) but also by image charge effect (ICE), since the dielectric constant of the barrier layers is much smaller than that of the well layers. By comparing the 1s-exciton and 2s-exciton energies, we have investigated the influence of ICE with regard to the difference of the Bohr radius.

  5. Control of interlayer physics in 2H transition metal dichalcogenides

    Science.gov (United States)

    Wang, Kuang-Chung; Stanev, Teodor K.; Valencia, Daniel; Charles, James; Henning, Alex; Sangwan, Vinod K.; Lahiri, Aritra; Mejia, Daniel; Sarangapani, Prasad; Povolotskyi, Michael; Afzalian, Aryan; Maassen, Jesse; Klimeck, Gerhard; Hersam, Mark C.; Lauhon, Lincoln J.; Stern, Nathaniel P.; Kubis, Tillmann

    2017-12-01

    It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers—depending on the balance between spin-orbit interaction and interlayer hopping. This balance depends on the layer thickness, momentum space symmetry points, and applied gate fields. The design range of this balance, the effective Fermi levels, and all relevant effective masses is analyzed in great detail. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as the major source for the observed photoluminescence.

  6. FLOODPLAIN MAPPING, Starke COUNTY, IN

    Data.gov (United States)

    Federal Emergency Management Agency, Department of Homeland Security — The Floodplain Mapping study deliverables depict and quantify the flood risks for the study area. The primary risk classifications used are the...

  7. Doping effect in Si nanocrystals

    Science.gov (United States)

    Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

    2018-06-01

    Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

  8. Transport spin dependent in nanostructures: Current and geometry effect of quantum dots in presence of spin-orbit interaction

    Science.gov (United States)

    Paredes-Gutiérrez, H.; Pérez-Merchancano, S. T.; Beltran-Rios, C. L.

    2017-12-01

    In this work, we study the quantum electron transport through a Quantum Dots Structure (QDs), with different geometries, embedded in a Quantum Well (QW). The behaviour of the current through the nanostructure (dot and well) is studied considering the orbital spin coupling of the electrons and the Rashba effect, by means of the second quantization theory and the standard model of Green’s functions. Our results show the behaviour of the current in the quantum system as a function of the electric field, presenting resonant states for specific values of both the external field and the spin polarization. Similarly, the behaviour of the current on the nanostructure changes when the geometry of the QD and the size of the same are modified as a function of the polarization of the electron spin and the potential of quantum confinement.

  9. Effects of Organic Cation Length on Exciton Recombination in Two-Dimensional Layered Lead Iodide Hybrid Perovskite Crystals.

    Science.gov (United States)

    Gan, Lu; Li, Jing; Fang, Zhishan; He, Haiping; Ye, Zhizhen

    2017-10-19

    In recent years, 2D layered organic-inorganic lead halide perovskites have attracted considerable attention due to the distinctive quantum confinement effects as well as prominent excitonic luminescence. Herein, we show that the recombination dynamics and photoluminescence (PL) of the 2D layered perovskites can be tuned by the organic cation length. 2D lead iodide perovskite crystals with increased length of the organic chains reveal blue-shifted PL as well as enhanced relative internal quantum efficiency. Furthermore, we provide experimental evidence that the formation of face-sharing [PbI 6 ] 4- octahedron in perovskites with long alkyls induces additional confinement for the excitons, leading to 1D-like recombination. As a result, the PL spectra show enhanced inhomogeneous broadening at low temperature. Our work provides physical understanding of the role of organic cation in the optical properties of 2D layered perovskites, and would benefit the improvement of luminescence efficiency of such materials.

  10. Electric Field Modulation of Semiconductor Quantum Dot Photoluminescence: Insights Into the Design of Robust Voltage-Sensitive Cellular Imaging Probes.

    Science.gov (United States)

    Rowland, Clare E; Susumu, Kimihiro; Stewart, Michael H; Oh, Eunkeu; Mäkinen, Antti J; O'Shaughnessy, Thomas J; Kushto, Gary; Wolak, Mason A; Erickson, Jeffrey S; Efros, Alexander L; Huston, Alan L; Delehanty, James B

    2015-10-14

    The intrinsic properties of quantum dots (QDs) and the growing ability to interface them controllably with living cells has far-reaching potential applications in probing cellular processes such as membrane action potential. We demonstrate that an electric field typical of those found in neuronal membranes results in suppression of the QD photoluminescence (PL) and, for the first time, that QD PL is able to track the action potential profile of a firing neuron with millisecond time resolution. This effect is shown to be connected with electric-field-driven QD ionization and consequent QD PL quenching, in contradiction with conventional wisdom that suppression of the QD PL is attributable to the quantum confined Stark effect.

  11. Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer

    International Nuclear Information System (INIS)

    Deng, Zhen; Li, Zishen; Jiang, Yang; Ma, Ziguang; Fang, Yutao; Li, Yangfeng; Wang, Wenxin; Jia, Haiqiang; Chen, Hong

    2015-01-01

    In this work, a novel hybrid graphene/InGaN-based multiple quantum wells (MQWs) structure has been fabricated. Compared to the sample conventional structure (CS), the utilization of graphene transferred on top GaN layer significantly enhances the internal quantum efficiency and relatively photoluminescence intensity. Furthermore, the excitons in the MQWs of sample hybrid structure (HS) have a shorter decay lifetime of 3.4 ns than that of 6.7 ns for sample CS. These results are probably attributed to the free carriers in the graphene layer, which can screen the piezoelectric field in the active region and thus present a free quantum-confined Stark effect-like behavior. Our work demonstrates that the graphene on the top GaN layer can effectively increase the recombination rate in sample HS, which may further improve LEDs' performance. (orig.)

  12. Phonon-assisted exciton formation in ZnO/(Zn, Mg)O single quantum wells grown on C-plane oriented substrates

    International Nuclear Information System (INIS)

    Béaur, L.; Bretagnon, T.; Guillet, T.; Brimont, C.; Gallart, M.; Gil, B.; Gilliot, P.; Morhain, C.

    2013-01-01

    We report on absorption phenomena in ZnO/(Zn, Mg)O quantum wells grown along the c-axis by molecular beam epitaxy. The optical properties of such quantum wells are affected by a huge internal electric field. For wide quantum wells the absorption is driven by Quantum Confined Stark Effect. Phonon-assisted formation of excitons is observed in the case of thin quantum wells. The physical origin of these hot excitons is determined by using both low temperature (T=10 K) photoluminescence excitation spectroscopy and reflectivity measurements. -- Highlights: ► High structural quality ZnO/(Zn, Mg)O quantum wells are growth along the polar c-direction. ► Indirect phonon-assisted formation of excitons in the thin single quantum wells. ► Strong internal electric field present in polar heterostructures prevents the observation of hot excitons

  13. Single nanowire green InGaN/GaN light emitting diodes

    Science.gov (United States)

    Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

    2016-10-01

    Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

  14. Electric-Field-Induced Energy Tuning of On-Demand Entangled-Photon Emission from Self-Assembled Quantum Dots.

    Science.gov (United States)

    Zhang, Jiaxiang; Zallo, Eugenio; Höfer, Bianca; Chen, Yan; Keil, Robert; Zopf, Michael; Böttner, Stefan; Ding, Fei; Schmidt, Oliver G

    2017-01-11

    We explore a method to achieve electrical control over the energy of on-demand entangled-photon emission from self-assembled quantum dots (QDs). The device used in our work consists of an electrically tunable diode-like membrane integrated onto a piezoactuator, which is capable of exerting a uniaxial stress on QDs. We theoretically reveal that, through application of the quantum-confined Stark effect to QDs by a vertical electric field, the critical uniaxial stress used to eliminate the fine structure splitting of QDs can be linearly tuned. This feature allows experimental realization of a triggered source of energy-tunable entangled-photon emission. Our demonstration represents an important step toward realization of a solid-state quantum repeater using indistinguishable entangled photons in Bell state measurements.

  15. Current path in light emitting diodes based on nanowire ensembles

    International Nuclear Information System (INIS)

    Limbach, F; Hauswald, C; Lähnemann, J; Wölz, M; Brandt, O; Trampert, A; Hanke, M; Jahn, U; Calarco, R; Geelhaar, L; Riechert, H

    2012-01-01

    Light emitting diodes (LEDs) have been fabricated using ensembles of free-standing (In, Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron-beam-induced current analysis, cathodoluminescence as well as biased μ-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescence of such LEDs is governed by the differences in the individual current densities of the single-NW LEDs operated in parallel, i.e. by the inhomogeneity of the current path in the ensemble LED. In addition, the optoelectronic characterization leads to the conclusion that these NWs exhibit N-polarity and that the (In, Ga)N quantum well states in the NWs are subject to a non-vanishing quantum confined Stark effect. (paper)

  16. Modeling of anisotropic properties of double quantum rings by the terahertz laser field.

    Science.gov (United States)

    Baghramyan, Henrikh M; Barseghyan, Manuk G; Kirakosyan, Albert A; Ojeda, Judith H; Bragard, Jean; Laroze, David

    2018-04-18

    The rendering of different shapes of just a single sample of a concentric double quantum ring is demonstrated realizable with a terahertz laser field, that in turn, allows the manipulation of electronic and optical properties of a sample. It is shown that by changing the intensity or frequency of laser field, one can come to a new set of degenerated levels in double quantum rings and switch the charge distribution between the rings. In addition, depending on the direction of an additional static electric field, the linear and quadratic quantum confined Stark effects are observed. The absorption spectrum shifts and the additive absorption coefficient variations affected by laser and electric fields are discussed. Finally, anisotropic electronic and optical properties of isotropic concentric double quantum rings are modeled with the help of terahertz laser field.

  17. Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator

    International Nuclear Information System (INIS)

    Wang Hui-Tao; Zhou Dai-Bing; Zhang Rui-Kang; Lu Dan; Zhao Ling-Juan; Zhu Hong-Liang; Wang Wei; Ji Chen

    2015-01-01

    We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well (MQW) electro-absorption modulators (EAMs). In this work, the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f_−_3 _d_B bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated. (paper)

  18. Quantum well saturable absorber mirror with electrical control of modulation depth

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Rafailov, Edik U.; Livshits, Daniil

    2010-01-01

    in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 J /cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect......We demonstrate a quantum well QW semiconductor saturable absorber mirror SESAM comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth...

  19. Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Xia, Y.; Vinter, B.; Chauveau, J.-M.; Brault, J.; Nemoz, M.; Teisseire, M.; Leroux, M.

    2011-01-01

    Nonpolar (1120) Al 0.2 Ga 0.8 N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (1120) Zn 0.74 Mg 0.26 O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths.

  20. Interfacial effects in organic semiconductor heterojunctions

    International Nuclear Information System (INIS)

    Stadler, P.

    2011-01-01

    The field of organic electronics has systematically gained interest in recent years, technologically and scientifically advances have been made leading to practical applications such as organic light emitting diodes, organic field-effect transistors and organic photo-voltaic cells. In this thesis a fundamental study on organic molecules is presented targeting on interfacial effects at organic heterojunctions. Generally in organic electronic devices interfaces are considered as key parameters for achieving high performance applications. Therefore in this work the emphasis is to investigate layer-by-layer heterojunctions of organic molecules. Defined heterojunctions at inorganic III-V semiconductors form superlattices and quantum-wells, which lead to interfacial effects summarized as quantum confinement and two-dimensional electron gases. Although organic molecules differ in many aspects from their inorganic counterparts, similar effects can be theoretically expected at organic heterojunctions as well. Organic molecules form van-der-Waals type crystals and domains which are macroscopically anisotropic and polycrystalline or amorphous. Organic molecules are intrinsic semiconductors and at interfaces dipoles are formed, which control the energy level alignment. In order to characterize such structures and compare them to inorganic superlattices and quantum-wells it is necessary to induce charge carriers. In this work this is established either by interfacial doping using high-performance dielectrics in a field-effect transistor structure or by photo-doping by exciting a donor-acceptor bilayer. In both cases C 60 was chosen as organic semiconductor exhibiting good acceptor properties and an electron mobility in the range of 0.5 cm 2 V -1 s -1 . The fabrication of well-defined few-molecular layers allows probing directly at the interface. Spectroscopic methods and transport measurements are applied for characterization: Photoemission spectroscopy, absorption and photo

  1. A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

    International Nuclear Information System (INIS)

    Davies, M. J.; Hammersley, S.; Dawson, P.; Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.

    2016-01-01

    In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes

  2. A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

    Energy Technology Data Exchange (ETDEWEB)

    Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Hammersley, S.; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J. [Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2016-02-07

    In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.

  3. Influence of hydrostatic pressure on the built-in electric field in ZnO/ZnMgO quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Teisseyre, Henryk, E-mail: teiss@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Institute of High Pressure, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland); Kaminska, Agata; Suchocki, Andrzej; Kozanecki, Adrian [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Birner, Stefan [nextnano GmbH, Südmährenstr. 21, 85586 Poing (Germany); Young, Toby D. [Institute of Fundamental Technological Research, Polish Academy of Sciences, ul. Pawińskiego, 5b, 02-106 Warsaw (Poland)

    2016-06-07

    We used high hydrostatic pressure to perform photoluminescence measurements on polar ZnO/ZnMgO quantum well structures. Our structure oriented along the c-direction (polar direction) was grown by plasma-assisted molecular beam epitaxy on a-plane sapphire. Due to the intrinsic electric field, which exists in polar wurtzite structure at ambient pressure, we observed a red shift of the emission related to the quantum-confined Stark effect. In the high hydrostatic pressure experiment, we observed a strong decrease of the quantum well pressure coefficients with increased thickness of the quantum wells. Generally, a narrower quantum well gave a higher pressure coefficient, closer to the band-gap pressure coefficient of bulk material 20 meV/GPa for ZnO, while for wider quantum wells it is much lower. We observed a pressure coefficient of 19.4 meV/GPa for a 1.5 nm quantum well, while for an 8 nm quantum well the pressure coefficient was equal to 8.9 meV/GPa only. This is explained by taking into account the pressure-induced increase of the strain in our structure. The strain was calculated taking in to account that in-plane strain is not equal (due to fact that we used a-plane sapphire as a substrate) and the potential distribution in the structure was calculated self-consistently. The pressure induced increase of the built-in electric field is the same for all thicknesses of quantum wells, but becomes more pronounced for thicker quantum wells due to the quantum confined Stark effect lowering the pressure coefficients.

  4. STARK-EFFECT IN BARIUM 6SND 1D2 RYDBERG STATES - EVIDENCE OF STRONG PERTURBATIONS IN THE 1F3 SERIES

    NARCIS (Netherlands)

    van Leeuwen, K.A.H.; Hogervorst, W.; Post, B.H.

    1983-01-01

    The scalar and tensor polarizabilities of the barium 6snd D21 states with principal quantum number n ranging from 14 to 30, as well as those of the 5d 7d D21 perturber state near n=26, have been measured with high-resolution laser-atomic-beam spectroscopy. The data are analyzed by calculating the

  5. Stark absorption spectroscopy on the carotenoids bound to B800-820 and B800-850 type LH2 complexes from a purple photosynthetic bacterium, Phaeospirillum molischianum strain DSM120.

    Science.gov (United States)

    Horibe, Tomoko; Qian, Pu; Hunter, C Neil; Hashimoto, Hideki

    2015-04-15

    Stark absorption spectroscopy was applied to clarify the structural differences between carotenoids bound to the B800-820 and B800-850 LH2 complexes from a purple photosynthetic bacterium Phaeospirillum (Phs.) molischianum DSM120. The former complex is produced when the bacteria are grown under stressed conditions of low temperature and dim light. These two LH2 complexes bind carotenoids with similar composition, 10% lycopene and 80% rhodopin, each with the same number of conjugated CC double bonds (n=11). Quantitative classical and semi-quantum chemical analyses of Stark absorption spectra recorded in the carotenoid absorption region reveal that the absolute values of the difference dipole moments |Δμ| have substantial differences (2 [D/f]) for carotenoids bound to either B800-820 or B800-850 complexes. The origin of this striking difference in the |Δμ| values was analyzed using the X-ray crystal structure of the B800-850 LH2 complex from Phs. molischianum DSM119. Semi-empirical molecular orbital calculations predict structural deformations of the major carotenoid, rhodopin, bound within the B800-820 complex. We propose that simultaneous rotations around neighboring CC and CC bonds account for the differences in the 2 [D/f] of the |Δμ| value. The plausible position of the rotation is postulated to be located around C21-C24 bonds of rhodopin. Copyright © 2014 Elsevier Inc. All rights reserved.

  6. Electron–Cyclotron Laser Using Free-Electron Two-Quantum Stark Radiation in a Strong Uniform Axial Magnetic Field and an Alternating Axial Electric Field in a Voltage-Supplied Pill-Box Cavity

    International Nuclear Information System (INIS)

    Kim, S. H.

    2016-01-01

    We consider the radiation from the beam electrons traveling in a strong uniform axial magnetic field and an axial alternating electric field of wavelength λ_w generated by a voltage-supplied pill-box cavity. The beam electrons emit genuine laser radiation that propagates only in the axial direction through free-electron two-quantum Stark radiation. We find that laser radiation takes place only at the expense of the axial kinetic energy when λ_w ≪ c/(ω_c/γ), where ω_c/γ is the relativistic electron–cyclotron frequency. We formulate the laser power based on quantum-wiggler electrodynamics, and envision a laser of length 10 m with estimated power 0.1 GW/(kA) in the 10"−"4 cm wavelength range. (paper)

  7. Enhanced electroabsorption in strained-layer InxGa1-xAs-InP quantum wells via absorption edge merging

    International Nuclear Information System (INIS)

    Gomatam, B.N.; Anderson, N.G.

    1990-01-01

    Optoelectronic modulators are useful for optical communications, optical computing and other applications which require the electronic control of guided light. Considerable research has recently been devoted to multiple quantum well (MQW) modulators which use an electroabsorption effect unique to quantum wells: the quantum confined Stark effect (QCSE). Voltage controlled optical modulation can be achieved by Stark-shifting the absorption edge above and below the incident photon energy. This paper reports that, to obtain increased optical on-off ratios at decreased drive voltages, the authors are investigating a novel approach which exploits characteristics of MQWs under biaxial tension. The light hole band edge lies at a higher energy than the heavy hole band edge in these structures, which is opposite the case for unstrained or biaxially compressed structures. Since the absorption edge associated with the heavy holes decreases more rapidly with applied field than that for the light holes, merging of the two edges can be expected at some value of the applied field. This effect here called absorption edge merging (AEM), can be expected to give rise to a significant improvement in modulator design. We have theoretically investigated the AEM effect in In x Ga 1-x As/InP quantum well structures with x x Ga 1-x As quantum wells are under tension in such structures, hence the required light hole up band configuration can be achieved

  8. Anisotropic intrinsic spin Hall effect in quantum wires

    International Nuclear Information System (INIS)

    Cummings, A W; Akis, R; Ferry, D K

    2011-01-01

    We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of the wire, and that the nature of this anisotropy depends strongly on the electron density and the relative strengths of the Rashba and Dresselhaus spin-orbit couplings. In particular, at low densities, when only one subband of the quantum wire is occupied, the spin Hall effect is strongest for electron momentum along the [1-bar 10] axis, which is the opposite of what is expected for the purely 2D case. In addition, when more than one subband is occupied, the strength and anisotropy of the spin Hall effect can vary greatly over relatively small changes in electron density, which makes it difficult to predict which wire orientation will maximize the strength of the spin Hall effect. These results help to illuminate the role of quantum confinement in spin-orbit-coupled systems, and can serve as a guide for future experimental work on the use of quantum wires for spin-Hall-based spintronic applications. (paper)

  9. Debye screening length effects of nanostructured materials

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2014-01-01

    This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped ...

  10. A review of finite size effects in quasi-zero dimensional superconductors.

    Science.gov (United States)

    Bose, Sangita; Ayyub, Pushan

    2014-11-01

    Quantum confinement and surface effects (SEs) dramatically modify most solid state phenomena as one approaches the nanometer scale, and superconductivity is no exception. Though we may expect significant modifications from bulk superconducting properties when the system dimensions become smaller than the characteristic length scales for bulk superconductors-such as the coherence length or the penetration depth-it is now established that there is a third length scale which ultimately determines the critical size at which Cooper pairing is destroyed. In quasi-zero-dimensional (0D) superconductors (e.g. nanocrystalline materials, isolated or embedded nanoparticles), one may define a critical particle diameter below which the mean energy level spacing arising from quantum confinement becomes equal to the bulk superconducting energy gap. The so-called Anderson criterion provides a remarkably accurate estimate of the limiting size for the destabilization of superconductivity in nanosystems. This review of size effects in quasi-0D superconductors is organized as follows. A general summary of size effects in nanostructured superconductors (section 1) is followed by a brief overview of their synthesis (section 2) and characterization using a variety of techniques (section 3). Section 4 reviews the size-evolution of important superconducting parameters-the transition temperature, critical fields and critical current-as the Anderson limit is approached from above. We then discuss the effect of thermodynamic fluctuations (section 5), which become significant in confined systems. Improvements in fabrication methods and the increasing feasibility of addressing individual nanoparticles using scanning probe techniques have lately opened up new directions in the study of nanoscale superconductivity. Section 6 reviews both experimental and theoretical aspects of the recently discovered phenomena of 'parity effect' and 'shell effect' that lead to a strong, non-monotonic size

  11. Electric field effects on red chlorophylls, b-carotenes and P700 in cyanobacterial photosystem I complexes.

    NARCIS (Netherlands)

    Frese, R.N.; Palacios, M.A.; Azzizi, A.; van Stokkum, I.H.M.; Kruip, J.; Rögner, M.; Karapetyan, N.V.; Schlodder, E.; van Grondelle, R.; Dekker, J.P.

    2002-01-01

    We have probed the absorption changes due to an externally applied electric field (Stark effect) of Photosystem I (PSI) core complexes from the cyanobacteria Synechocystis sp. PCC 6803, Synechococcus elongatus and Spirulina platensis. The results reveal that the so-called C719 chlorophylls in S.

  12. Exploring the Nature of Exciton Localization in Quasi One-Dimensional GaAs/AlGaAs Quantum Well Tube Nanowires

    Science.gov (United States)

    Jackson, Howard; Badada, Bekele; Shi, Teng; Smith, Leigh; Zheng, Changlin; Etheridge, Joanne; Jiang, Nian; Tan, Hoe; Jagadish, Channupati

    We explore the nature of exciton localization in single GaAs/AlGaAs nanowire quantum well tube (QWT) devices using photocurrent (PC) spectroscopy combined with simultaneous photoluminescence (PL) and photoluminescence excitation (PLE) measurements. Excitons confined to GaAs quantum well tubes of 8 and 4 nm widths embedded into an AlGaAs barrier are seen to ionize at high bias. Spectroscopic signatures of the ground and excited states confined to the QWT seen in PL, PLE and PC data are consistent with simple numerical calculations. The demonstration of good electrical contact with the QWTs enables the study of Stark effect shifts in the sharp emission lines of excitons localized to quantum dot-like states within the QWT. Atomic resolution cross-sectional TEM measurements, an analysis of the temperature dependence of PL and time-resolved PL as well as the quantum confined Stark effect of these dots provide insights into the nature of the exciton localization in these nanostructures. We acknowledge the financial support of NSF DMR 1507844, DMR 151373 and ECCS 1509706 and the Australian Research Council.

  13. A review of finite size effects in quasi-zero dimensional superconductors

    International Nuclear Information System (INIS)

    Bose, Sangita; Ayyub, Pushan

    2014-01-01

    Quantum confinement and surface effects (SEs) dramatically modify most solid state phenomena as one approaches the nanometer scale, and superconductivity is no exception. Though we may expect significant modifications from bulk superconducting properties when the system dimensions become smaller than the characteristic length scales for bulk superconductors—such as the coherence length or the penetration depth—it is now established that there is a third length scale which ultimately determines the critical size at which Cooper pairing is destroyed. In quasi-zero-dimensional (0D) superconductors (e.g. nanocrystalline materials, isolated or embedded nanoparticles), one may define a critical particle diameter below which the mean energy level spacing arising from quantum confinement becomes equal to the bulk superconducting energy gap. The so-called Anderson criterion provides a remarkably accurate estimate of the limiting size for the destabilization of superconductivity in nanosystems. This review of size effects in quasi-0D superconductors is organized as follows. A general summary of size effects in nanostructured superconductors (section 1) is followed by a brief overview of their synthesis (section 2) and characterization using a variety of techniques (section 3). Section 4 reviews the size-evolution of important superconducting parameters—the transition temperature, critical fields and critical current—as the Anderson limit is approached from above. We then discuss the effect of thermodynamic fluctuations (section 5), which become significant in confined systems. Improvements in fabrication methods and the increasing feasibility of addressing individual nanoparticles using scanning probe techniques have lately opened up new directions in the study of nanoscale superconductivity. Section 6 reviews both experimental and theoretical aspects of the recently discovered phenomena of ‘parity effect’ and ‘shell effect’ that lead to a strong, non

  14. Two-center three-electron bonding in ClNH{sub 3} revealed via helium droplet infrared laser Stark spectroscopy: Entrance channel complex along the Cl + NH{sub 3} → ClNH{sub 2} + H reaction

    Energy Technology Data Exchange (ETDEWEB)

    Moradi, Christopher P.; Douberly, Gary E., E-mail: douberly@uga.edu [Department of Chemistry, University of Georgia, Athens, Georgia 30602-2556 (United States); Xie, Changjian; Guo, Hua [Department of Chemistry and Chemical Biology, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Kaufmann, Matin [Department of Physical Chemistry II, Ruhr-University Bochum, D-44801 Bochum (Germany)

    2016-04-28

    Pyrolytic dissociation of Cl{sub 2} is employed to dope helium droplets with single Cl atoms. Sequential addition of NH{sub 3} to Cl-doped droplets leads to the formation of a complex residing in the entry valley to the substitution reaction Cl + NH{sub 3} → ClNH{sub 2} + H. Infrared Stark spectroscopy in the NH stretching region reveals symmetric and antisymmetric vibrations of a C{sub 3v} symmetric top. Frequency shifts from NH{sub 3} and dipole moment measurements are consistent with a ClNH{sub 3} complex containing a relatively strong two-center three-electron (2c–3e) bond. The nature of the 2c–3e bonding in ClNH{sub 3} is explored computationally and found to be consistent with the complexation-induced blue shifts observed experimentally. Computations of interconversion pathways reveal nearly barrierless routes to the formation of this complex, consistent with the absence in experimental spectra of two other complexes, NH{sub 3}Cl and Cl–HNH{sub 2}, which are predicted in the entry valley to the hydrogen abstraction reaction Cl + NH{sub 3} → HCl + NH{sub 2}.

  15. Excitonic effects and related properties in semiconductor nanostructures: roles of size and dimensionality

    Science.gov (United States)

    Wu, Shudong; Cheng, Liwen; Wang, Qiang

    2017-08-01

    The size- and dimensionality-dependence of excitonic effects and related properties in semiconductor nanostructures are theoretically studied in detail within the effective-mass approximation. When nanostructure sizes become smaller than the bulk exciton Bohr radius, excitonic effects are significantly enhanced with reducing size or dimensionality. This is as a result of quantum confinement in more directions leading to larger exciton binding energies and normalized exciton oscillator strengths. These excitonic effects originate from electron-hole Coulombic interactions, which strongly enhance the oscillator strength between the electron and hole. It is also established that the universal scaling of exciton binding energy versus the inverse of the exciton Bohr radius follows a linear scaling law. Herein, we propose a stretched exponential law for the size scaling of optical gap, which is in good agreement with the calculated data. Due to differences in the confinement dimensionality, the radiative lifetime of low-dimensional excitons becomes shorter than that of bulk excitons. The size dependence of the exciton radiative lifetimes is in good agreement with available experimental data. This strongly enhanced electron-hole exchange interaction is expected in low-dimensional structures due to enriched excitonic effects. The main difference in nanostructures compared to the bulk can be interpreted in terms of the enhanced excitonic effects induced by exciton localization. The enhanced excitonic effects are expected to be of importance in developing stable and high-efficiency nanoscale excitonic optoelectronic devices.

  16. Correlation and symmetry effects in transport through an artificial molecule

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez, F. [Posgrado en Fisica de Materiales, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Ensenada, Baja California (Mexico); Cota, E. [Centro de Ciencias de la Materia Condensada-UNAM, Ensenada, Baja California (Mexico); Ulloa, S.E. [Department of Physics and Astronomy and Condensed Matter and Surface Sciences Program, Ohio University, Athens, Ohio 45701-2979 (United States)

    1999-02-01

    Spectral weights and current-voltage characteristics of an artificial diatomic molecule are calculated, considering cases where the dots connected in series are in general different. The spectral weights allow us to understand the effects of correlations, their connection with selection rules for transport, and the role of excited states in the experimental conductance spectra of these coupled double dot systems (DDS). An extended Hubbard Hamiltonian with varying interdot tunneling strength is used as a model, incorporating quantum confinement in the DDS, interdot tunneling as well as intra- and interdot Coulomb interactions. We find that interdot tunneling values determine to a great extent the resulting eigenstates and corresponding spectral weights. Details of the state correlations strongly suppress most of the possible conduction channels, giving rise to effective selection rules for conductance through the molecule. Most states are found to make insignificant contributions to the total current for finite biases. We find also that the symmetry of the structure is reflected in the I-V characteristics, and is in qualitative agreement with experiment. {copyright} {ital 1999} {ital The American Physical Society}

  17. Controlling the Branching Ratio of Photoionization Products under Two-Color Excitation: Competition between ac Stark Splitting and Two-Path Interference

    International Nuclear Information System (INIS)

    Nakajima, T.; Zhang, J.; Lambropoulos, P.; Lambropoulos, P.

    1997-01-01

    We investigate the variation of the photoionization yields into different ionic channels by means of the one-photon-near-resonant two-photon ionization scheme under two-color excitation. We present a general formulation and the results of specific calculations pertaining to the Ca atom with realistic parameters. A significant change of the ionization into Ca + 4s , 3d , and 4p channels has been observed as a detuning is varied, which agrees qualitatively well with the observation by Wang, Chen, and Elliott [Phys.Rev.Lett.77, 2416 (1996)] for the Ba atom. The importance of the laser intensity effects is also addressed. copyright 1997 The American Physical Society

  18. Subband Structure and Effective Mass in the Inversion Layer of a Strain Si-Based Alloy P-Type MOSFET.

    Science.gov (United States)

    Chen, Kuan-Ting; Fan, Jun Wei; Chang, Shu-Tong; Lin, Chung-Yi

    2015-03-01

    In this paper, the subband structure and effective mass of an Si-based alloy inversion layer in a PMOSFET are studied theoretically. The strain condition considered in our calculations is the intrinsic strain resulting from growth of the silicon-carbon alloy on a (001) Si substrate and mechanical uniaxial stress. The quantum confinement effect resulting from the vertically effective electric field was incorporated into the k · p calculation. The distinct effective mass, such as the quantization effective mass and the density-of-states (DOS) effective mass, as well as the subband structure of the silicon-carbon alloy inversion layer for a PMOSFET under substrate strain and various effective electric field strengths, were all investigated. Ore results show that subband structure of relaxed silicon-carbon alloys with low carbon content are almost the same as silicon. We find that an external stress applied parallel to the channel direction can efficiently reduce the effective mass along the channel direction, thus producing hole mobility enhancement.

  19. Edge effects on the electronic properties of phosphorene nanoribbons

    International Nuclear Information System (INIS)

    Peng, Xihong; Copple, Andrew; Wei, Qun

    2014-01-01

    Two dimensional few-layer black phosphorus crystal structures have recently been fabricated and have demonstrated great potential in electronic applications. In this work, we employed first principles density functional theory calculations to study the edge and quantum confinement effects on the electronic properties of the phosphorene nanoribbons (PNR). Different edge functionalization groups, such as H, F, Cl, OH, O, S, and Se, in addition to a pristine case were studied for a series of ribbon widths up to 3.5 nm. It was found that the armchair-PNRs (APNRs) are semiconductors for all edge groups considered in this work. However, the zigzag-PNRs (ZPNRs) show either semiconductor or metallic behavior in dependence on their edge chemical species. Family 1 edges (i.e., H, F, Cl, OH) form saturated bonds with P atoms in the APNRs and ZPNRs, and the edge states keep far away from the band gap. However, Family 2 edges (pristine, O, S, Se) form weak unsaturated bonds with the p z orbital of the phosphorus atoms and bring edge states within the band gap of the ribbons. For the ZPNRs, the edge states of Family 2 are present around the Fermi level within the band gap, which close up the band gap of the ZPNRs. For the APNRs, these edge states are located at the bottom of the conduction band and result in a reduced band gap.

  20. Edge effects on the electronic properties of phosphorene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Xihong, E-mail: xihong.peng@asu.edu [School of Letters and Sciences, Arizona State University, Mesa, Arizona 85212 (United States); Copple, Andrew [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States); Wei, Qun [School of Letters and Sciences, Arizona State University, Mesa, Arizona 85212 (United States); School of Physics and Optoelectronic Engineering, Xidian University, Xi' an 710071 (China)

    2014-10-14

    Two dimensional few-layer black phosphorus crystal structures have recently been fabricated and have demonstrated great potential in electronic applications. In this work, we employed first principles density functional theory calculations to study the edge and quantum confinement effects on the electronic properties of the phosphorene nanoribbons (PNR). Different edge functionalization groups, such as H, F, Cl, OH, O, S, and Se, in addition to a pristine case were studied for a series of ribbon widths up to 3.5 nm. It was found that the armchair-PNRs (APNRs) are semiconductors for all edge groups considered in this work. However, the zigzag-PNRs (ZPNRs) show either semiconductor or metallic behavior in dependence on their edge chemical species. Family 1 edges (i.e., H, F, Cl, OH) form saturated bonds with P atoms in the APNRs and ZPNRs, and the edge states keep far away from the band gap. However, Family 2 edges (pristine, O, S, Se) form weak unsaturated bonds with the p{sub z} orbital of the phosphorus atoms and bring edge states within the band gap of the ribbons. For the ZPNRs, the edge states of Family 2 are present around the Fermi level within the band gap, which close up the band gap of the ZPNRs. For the APNRs, these edge states are located at the bottom of the conduction band and result in a reduced band gap.

  1. The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes

    International Nuclear Information System (INIS)

    Wang, Jen-Cheng; Fang, Chia-Hui; Wu, Ya-Fen; Chen, Wei-Jen; Kuo, Da-Chuan; Fan, Ping-Lin; Jiang, Joe-Air; Nee, Tzer-En

    2012-01-01

    Thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30 °C to 100 °C. The current-dependent electroluminescence (EL) spectra, current–voltage (I–V) curves and luminescence intensity–current (L–I) characteristics of green InGaN/GaN MQW LEDs have been measured to characterize the thermal-related effects on the optoelectrical properties of the InGaN/GaN MQW LEDs. The experimental results show that both the forward voltages decreased with a slope of −3.7 mV/K and the emission peak wavelength increased with a slope of +0.02 nm/K with increasing temperature, indicating a change in the contact resistance between the metal and GaN layers and the existence of a band gap shrinkage effect. The junction temperature estimated from the forward voltage and the emission peak shift varied from 25.6 to 14.5 °C and from 22.4 to 35.6 °C, respectively. At the same time, the carrier temperature decreased from 371.2 to 348.1 °C as estimated from the slope of high-energy side of the emission spectra. With increasing injection current, there was found to be a strong current-dependent blueshift of −0.15 nm/mA in the emission peak wavelength of the EL spectra. This could be attributed to not only the stronger band-filling effect but also the enhanced quantum confinement effect that resulted from the piezoelectric polarization and spontaneous polarization in InGaN/GaN heterostructures. We also demonstrate a helpful and easy way to measure and calculate the junction temperature of InGaN/GaN MQW LEDs. - Highlights: ► We examine the effect of junction temperature on the optoelectrical properties. ► Not only the band-filling effect but also the quantum confinement effect. ► Piezoelectric polarization and the spontaneous polarization in InGaN/GaN structures. ► Carrier transport was responsible for the influences on the

  2. Absorption intensities and emission cross sections of principal intermanifold and inter-Stark transitions of Er3+(4f 11) in polycrystalline ceramic garnet Y3Al5O12

    International Nuclear Information System (INIS)

    Sardar, Dhiraj K.; Russell, Charles C. III; Gruber, John B.; Allik, Toomas H.

    2005-01-01

    A comparative spectroscopic study is performed on Er 3+ (4f 11 ) ions doped in polycrystalline ceramic garnet Y 3 Al 5 O 12 (YAG) and single-crystal laser rod, both containing nominal 50 at. % of Er 3+ . The standard Judd-Ofelt (JO) model is applied to the room-temperature absorption intensities of Er 3+ (4f 11 ) transitions in both hosts to obtain the phenomenological intensity parameters. These parameters are subsequently used to determine the radiative decay rates, radiative lifetimes, and branching ratios of the Er 3+ transitions from the upper multiplet manifolds to the corresponding lower-lying multiplet manifolds 2S+1 L J of Er 3+ (4f 11 ) in these garnet hosts. The emission cross sections of the intermanifold Er 3+ 4 I 13/2 → 4 I 15/2 (1.5 μm) transition as well as the principal inter-Stark transition Y 1 →Z 4 (1550 nm) within the corresponding multiplet manifolds have been determined. The room-temperature fluorescence lifetimes of the 4 I 13/2 → 4 I 15/2 (1.5 μm) transition in both polycrystalline ceramic and single-crystal YAG samples were measured. From the radiative lifetimes determined from the JO model and the measured fluorescence lifetimes, the quantum efficiencies for both samples were determined. The comparative study of Er 3+ (4f 11 ) ions performed suggests that polycrystalline ceramic YAG is an excellent alternative to single-crystal YAG rod for certain applications

  3. Finite-size effects on band structure of CdS nanocrystallites studied by positron annihilation

    International Nuclear Information System (INIS)

    Kar, Soumitra; Biswas, Subhajit; Chaudhuri, Subhadra; Nambissan, P.M.G.

    2005-01-01

    Quantum confinement effects in nanocrystalline CdS were studied using positrons as spectroscopic probes to explore the defect characteristics. The lifetime of positrons annihilating at the vacancy clusters on nanocrystalline grain surfaces increased remarkably consequent to the onset of such finite-size effects. The Doppler broadened line shape was also found to reflect rather sensitively such distinct changes in the electron momentum redistribution scanned by the positrons, owing to the widening of the band gap. The nanocrystalline sizes of the samples used were confirmed from x-ray diffraction and high resolution transmission electron microscopy and the optical absorption results supported the quantum size effects. Positron annihilation results indicated distinct qualitative changes between CdS nanorods and the bulk sample, notwithstanding the identical x-ray diffraction pattern and close resemblance of the optical absorption spectra. The results are promising in the event of positron annihilation being proved to be a very successful tool for the study of such finite-size effects in semiconductor nanoparticles

  4. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

    Directory of Open Access Journals (Sweden)

    Hong Yu

    2009-04-01

    Full Text Available In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors.

  5. Plasma deposition of Au-SiO2 multilayers for surface plasmon resonance based red colored coatings

    NARCIS (Netherlands)

    Takele Beyene, H.T.; Tichelaar, F.D.; Sanden, van de M.C.M.; Creatore, M.; Kondruweit, S.; Szyszka, B.; Pütz, J.

    2010-01-01

    Nanocomposite thin films with metallic nanoparticles embedded in a dielectric material show attractive plasmonic properties due to dielectric and quantum confinement effects. In this work. the expanding thermal plasma chemical vapor deposition in combination with radjo frequency magnetron sputtering

  6. A sub k{sub B}T/q semimetal nanowire field effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Ansari, L.; Fagas, G.; Gity, F.; Greer, J. C., E-mail: Jim.Greer@Tyndall.ie [Tyndall National Institute, Lee Maltings, Dyke Parade, Cork T12 R5CP (Ireland)

    2016-08-08

    The key challenge for nanoelectronics technologies is to identify the designs that work on molecular length scales, provide reduced power consumption relative to classical field effect transistors (FETs), and that can be readily integrated at low cost. To this end, a FET is introduced that relies on the quantum effects arising for semimetals patterned with critical dimensions below 5 nm, that intrinsically has lower power requirements due to its better than a “Boltzmann tyranny” limited subthreshold swing (SS) relative to classical field effect devices, eliminates the need to form heterojunctions, and mitigates against the requirement for abrupt doping profiles in the formation of nanowire tunnel FETs. This is achieved through using a nanowire comprised of a single semimetal material while providing the equivalent of a heterojunction structure based on shape engineering to avail of the quantum confinement induced semimetal-to-semiconductor transition. Ab initio calculations combined with a non-equilibrium Green's function formalism for charge transport reveals tunneling behavior in the OFF state and a resonant conduction mechanism for the ON state. A common limitation to tunnel FET (TFET) designs is related to a low current in the ON state. A discussion relating to the semimetal FET design to overcome this limitation while providing less than 60 meV/dec SS at room temperature is provided.

  7. Exploring the effect of nanoholes on arsenene: a density functional theory study

    Science.gov (United States)

    Mushtaq, M.; Zhou, Y. G.; Xiang, X.

    2018-05-01

    Effectively modulating the electronic and magnetic properties of a two-dimensional system is critical for the application of it in nanoscale devices. In this work, we explore the effect of nanohole on arsenene on the basis of density functional theory calculations. Our calculations show that, except slight distortion at the corner of nanoholes, geometries of both un-hydrogenated nanohole-embedded arsenene (As-NH) structure and hydrogenated nanohole-embedded arsenene (H-As-NH) structure are well maintained after optimization. Interestingly, the As-NH structure can be magnetized so that it can represent ferromagnetic, ferrimagnetic or antiferromagnetic behavior depending on the shape of the nanoholes. Furthermore, As-NH structure with triangle nanoholes is expected to exhibit remarkable magnetism. Besides, owning to the induction of flat defect levels by the nanoholes, As-NH structure can represent a relatively small band gap. In contrast, the H-As-NH structure is shown to lack the magnetism due to the saturation of unpaired As atoms. In this case, the H-As-NH structure exhibits a relatively large band gap due to the quantum confinement effect. These results indicate an opportunity for the design of arsenene-based nanoscale devices with potential applications in spintronic and optical fields.

  8. The confinement effect in spherical inhomogeneous quantum dots and stability of excitons

    Directory of Open Access Journals (Sweden)

    F. Benhaddou

    2017-06-01

    Full Text Available We investigate in this work the quantum confinement effect of exciton in spherical inhomogeneous quantum dots IQDs. The spherical core is enveloped by two shells. The inner shell is a semiconductor characterized by a small band-gap. The core and the outer shell are the same semiconductor characterized by a large band-gap. So there is a significant gap-offset creating a deep potential well where the excitons are localized and strongly confined. We have adopted the Ritz variational method to calculate numerically the excitonic ground state energy and its binding energy in the strong, moderate and low confinement regimes. The results show that the Ritz variational method is in good agreement with the perturbation method in strong confinement. There is a double confinement effect and dual control. The calculation checks the effective Rydberg R* at the asymptotic limit of bulk semiconductor when the thickness takes very large values. The excitonic binding energy increases, Thus giving the excitons a high stability even at ambient temperature. These nanosystems are promising in several applications: lighting, detection, biological labeling and quantum computing.

  9. Surface plasmon polariton Wannier-Stark ladder

    Czech Academy of Sciences Publication Activity Database

    Kuzmiak, Vladimír; Maradudin, A. A.; Méndez, E.R.

    2014-01-01

    Roč. 39, č. 6 (2014), s. 1613-1616 ISSN 0146-9592 R&D Projects: GA MŠk LH12009 Institutional support: RVO:67985882 Keywords : Finite difference time domain method * Electromagnetic wave polarization * Plasmons Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.292, year: 2014

  10. Zur Dynamik von stark nichtlinearen parametererregten Getriebesystemen

    Czech Academy of Sciences Publication Activity Database

    Hortel, Milan; Škuderová, Alena

    2004-01-01

    Roč. 4, č. 4 (2004), s. 91-92 ISSN 1617-7061. [Annual Scientific Conference /75./. TU Dresden , 21.03.2004-27.03.2004] R&D Projects: GA AV ČR IBS2076353 Institutional research plan: CEZ:AV0Z2076919 Keywords : nonlinear dynamics * parametric vibration * gearing Subject RIV: BI - Acoustics

  11. Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films

    International Nuclear Information System (INIS)

    Prathap, P; Revathi, N; Subbaiah, Y P Venkata; Reddy, K T Ramakrishna

    2008-01-01

    Thin films of ZnS with thicknesses ranging from 100 to 600 nm have been deposited on glass substrates by close spaced thermal evaporation. All the films were grown at the same deposition conditions except the deposition time. The effect of thickness on the physical properties of ZnS films has been studied. The experimental results indicated that the thickness affects the structure, lattice strain, surface morphology and optoelectronic properties of ZnS films significantly. The films deposited at a thickness of 100 nm showed hexagonal structure whereas films of thickness 300 nm or more showed cubic structure. However, coexistence of both cubic and hexagonal structures was observed in the films of 200 nm thickness. The surface roughness of the films showed an increasing trend at higher thicknesses of the films. A blue-shift in the energy band gap along with an intense UV emission band was observed with the decrease of film thickness, which are ascribed to the quantum confinement effect. The behaviour of optical constants such as refractive index and extinction coefficient were analysed. The variation of refractive index and extinction coefficient with thickness was explained on the basis of the contribution from the packing density of the layers. The electrical resistivity as well as the activation energy were evaluated and found to decrease with the increase of film thickness. The thickness had a significant influence on the optical band gap as well as the luminescence intensity

  12. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    Energy Technology Data Exchange (ETDEWEB)

    Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Biswas, Pranab; Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S. [Department of Electronic Science, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2014-01-28

    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10–80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of

  13. Excitonic dynamical Franz-Keldysh effect

    DEFF Research Database (Denmark)

    Nordstrøm, K.B.; Johnsen, Kristinn; Allen, S.J.

    1998-01-01

    The dynamical Franz-Keldysh effect is exposed by exploring near-band-gap absorption in the presence of intense THz electric fields. It bridges the gap between the de Franz-Keldysh effect and multiphoton absorption and competes with the THz ac Stark effect in shifting the energy of the excitonic...... resonance. A theoretical model which includes the strong THz field nonperturbatively via a nonequilibrium Green functions technique is able to describe the dynamical Franz-Keldysh effect in the presence of excitonic absorption....

  14. Charge separation in branched TiO_2 nanorod array homojunction aroused by quantum effect for enhanced photocatalytic decomposition of gaseous benzene

    International Nuclear Information System (INIS)

    Wang, Xiaoxia; Ni, Qian; Zeng, Dawen; Liao, Guanglan; Xie, Changsheng

    2016-01-01

    Highlights: • Charge separation in homojunction based on the broadened band gap by quantum effect. • Absolute charge separation by the passivation effect of TiO_2 nanorod. • Long-distance electron transfer behavior in photocatalysis. • Roughed surface for enhanced light harvesting by light trapping effect. - Abstract: As known, the electron transfer behavior in photocatalysis is short-distance transportation, which leads the photo-induced electrons and holes to be localized. The temporarily separated electrons and holes will recombine with each other in the localized region. In this paper, we successfully achieved electron transfer in a homojunction of branched rutile TiO_2 nanorod @nanoparticle core-shell architecture by quantum confinement effect aroused by the nanoparticle, which is proved by the blue-shifting in UV–vis absorption spectrum of the homojunction. Meanwhile, an absolute charge separation is also achieved by the long-distance electron transfer along the single-crystalline rutile TiO_2 nanorod as uninterrupted high-speed electron transfer channel to FTO substrates. Based on the effective charge separation, the photocatalytic decomposition of gaseous benzene by the homojunction is significantly enhanced, yielding 10 times CO_2 than that of the nanorod array. This homojunction interfacial charge separation, aroused by quantum effect, through long-distance transfer along the single-crystalline nanorod gives us inspiration to achieve efficient charge separation with defect-less interfaces, which might can be utilized for real-time environmental abatement and energy generation simultaneously.

  15. A theoretical study of blue phosphorene nanoribbons based on first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Jiafeng; Si, M. S., E-mail: sims@lzu.edu.cn; Yang, D. Z.; Zhang, Z. Y.; Xue, D. S. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

    2014-08-21

    Based on first-principles calculations, we present a quantum confinement mechanism for the band gaps of blue phosphorene nanoribbons (BPNRs) as a function of their widths. The BPNRs considered have either armchair or zigzag shaped edges on both sides with hydrogen saturation. Both the two types of nanoribbons are shown to be indirect semiconductors. An enhanced energy gap of around 1 eV can be realized when the ribbon's width decreases to ∼10 Å. The underlying physics is ascribed to the quantum confinement effect. More importantly, the parameters to describe quantum confinement are obtained by fitting the calculated band gaps with respect to their widths. The results show that the quantum confinement in armchair nanoribbons is stronger than that in zigzag ones. This study provides an efficient approach to tune the band gap in BPNRs.

  16. Visible luminescence in photo-electrochemically etched p-type porous silicon: Effect of illumination wavelength

    Energy Technology Data Exchange (ETDEWEB)

    Naddaf, M.; Hamadeh, H., E-mail: scientific@aec.org.sy [Department of Physics, Atomic Energy Commission of Syria (AECS), P.O. Box 6091 Damascus (Syrian Arab Republic)

    2009-08-31

    The effect of low power density of {approx} 5 {mu}W/cm{sup 2} monochromatic light of different wavelengths on the visible photoluminescence (PL) properties of photo-electrochemically formed p-type porous silicon (PS) has been investigated. Two-peak PL 'red' and 'green' is resolved in PS samples etched under blue-green wavelength illumination; 480, 533 and 580 nm. It is found that the weight of 'green' PL has maxima for the sample illuminated with 533 nm wavelength. Whereas, PL spectra of PS prepared under the influence of red illumination or in dark does not exhibit 'green' PL band, but shows considerable enhancement in the 'red' PL peak intensity. Fourier transform infrared (FTIR) spectroscopic analysis reveals the relationship between the structures of chemical bonding in PS and the observed PL behavior. In particular, the PL efficiency is highly affected by the alteration of the relative content of hydride, oxide and hydroxyl species. Moreover, relative content of hydroxyl group with respect to oxide bonding is seen to have strong relationship to the blue PL. Although, the estimated energy gap value of PS samples shows a considerable enlargement with respect to that of bulk c-Si, the FTIR, low temperature PL and Raman measurements and analysis have inconsistency with quantum confinement of PS.

  17. Visible luminescence in photo-electrochemically etched p-type porous silicon: Effect of illumination wavelength

    International Nuclear Information System (INIS)

    Naddaf, M.; Hamadeh, H.

    2010-01-01

    The effect of low power density of ∼5 μWcm - 2 monochromatic light of different wavelengths on the visible photoluminescence (PL) properties of photo-electrochemically formed p-type porous silicon (PS) has been investigated. Tow peak PL red and green is resolved in PS samples etched under blue-green wavelength illumination; 480,533 and 580 nm. It is found that the weight of green PL has maxima for the sample illuminated with 533 nm wavelength whereas, PL spectra of PS prepared under the influence of red illumination or in dark does not exhibit green PL band, but shows considerable enhancement in the red PL peak intensity. Fourier transform infrared (FTIR) spectroscopic analysis reveals the relationship between the structures of chemical bonding in PS and the observed PL behavior. In particular, the PL efficiency is highly affected by the alteration of the relative content of hydride, oxide and hydroxyl species. Moreover, relative content of hydroxyl group with respect to oxide bonding is seen to have strong relationship to the blue PL. Although, the estimated energy gap value of PS samples shows a considerable enlargement with respect to that of bulk c-Si, the FTIR, low temperature PL and Raman measurements and analysis have inconsistency with quantum confinement of PS. (author)

  18. Visible luminescence in photo-electrochemically etched p-type porous silicon: Effect of illumination wavelength

    International Nuclear Information System (INIS)

    Naddaf, M.; Hamadeh, H.

    2009-01-01

    The effect of low power density of ∼ 5 μW/cm 2 monochromatic light of different wavelengths on the visible photoluminescence (PL) properties of photo-electrochemically formed p-type porous silicon (PS) has been investigated. Two-peak PL 'red' and 'green' is resolved in PS samples etched under blue-green wavelength illumination; 480, 533 and 580 nm. It is found that the weight of 'green' PL has maxima for the sample illuminated with 533 nm wavelength. Whereas, PL spectra of PS prepared under the influence of red illumination or in dark does not exhibit 'green' PL band, but shows considerable enhancement in the 'red' PL peak intensity. Fourier transform infrared (FTIR) spectroscopic analysis reveals the relationship between the structures of chemical bonding in PS and the observed PL behavior. In particular, the PL efficiency is highly affected by the alteration of the relative content of hydride, oxide and hydroxyl species. Moreover, relative content of hydroxyl group with respect to oxide bonding is seen to have strong relationship to the blue PL. Although, the estimated energy gap value of PS samples shows a considerable enlargement with respect to that of bulk c-Si, the FTIR, low temperature PL and Raman measurements and analysis have inconsistency with quantum confinement of PS.

  19. Nanomorphology Effects in Semiconductors with Native Ferromagnetism: Hierarchical Europium (II) Oxide Tubes Prepared via a Topotactic Nanostructure Transition.

    Science.gov (United States)

    Trepka, Bastian; Erler, Philipp; Selzer, Severin; Kollek, Tom; Boldt, Klaus; Fonin, Mikhail; Nowak, Ulrich; Wolf, Daniel; Lubk, Axel; Polarz, Sebastian

    2018-01-01

    Semiconductors with native ferromagnetism barely exist and defined nanostructures are almost unknown. This lack impedes the exploration of a new class of materials characterized by a direct combination of effects on the electronic system caused by quantum confinement effects with magnetism. A good example is EuO for which currently no reliable routes for nanoparticle synthesis can be established. Bottom-up approaches applicable to other oxides fail because of the labile oxidation state +II. Instead of targeting a direct synthesis, the two steps-"structure control" and "chemical transformation"-are separated. The generation of a transitional, hybrid nanophase is followed by its conversion into EuO under full conservation of all morphological features. Hierarchical EuO materials are now accessible in the shape of oriented nanodisks stacked to tubular particles. Magnetically, the coupling of either vortex or onion states has been found. An unexpected temperature dependence is governed by thermally activated transitions between these states. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Quantum corral effects on competing orders and electronic states in chiral d + id or f-wave superconductors.

    Science.gov (United States)

    Zuo, Xian-Jun

    2018-03-07

    Self-consistent calculations are performed to characterize the quantum corral effects on the electronic states of chiral d + id or f-wave superconductors in this paper. A variety of spatial structures of competing orders are revealed in the presence of ferromagnetic nano-corrals, and superconducting islands are found to be absent in the case of small corrals while being seen for large corrals. Compared with the local suppression of superconductivity by a magnetic impurity inside the corral, surprisingly, an additional remarkable feature, i.e., obvious oscillations or enhancement of superconductivity around a non-magnetic impurity, is observed inside the magnetic corral. This is important in view of applications, especially in view of the demand for devices to locally produce strong superconductivity. Meanwhile, the charge density displays obvious modulations due to quantum confinement but in contrast, the spin density pattern exhibits its robustness against the corral effect. Furthermore, we explore the local density of states so as to be directly checked by experiments. We demonstrate that a magnetic corral can suppress the formation of quasi-particle bound states induced by an impurity inside the corral in the chiral d + id state while the f-wave case shows different behaviors. These results also propose a new route to make a distinction between the two competing pairing states in triangular-lattice superconductors.

  1. Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect

    International Nuclear Information System (INIS)

    Liu, C; Dai, L; You, L P; Xu, W J; Qin, G G

    2008-01-01

    Single-crystalline n-type InP nanowires (NWs) with different electron concentrations were synthesized on Si substrates via the vapor phase transport method. The electrical properties of the InP nanowires were investigated by fabricating and measuring single NW field-effect transistors (FETs). Single InP NW/p + -Si heterojunctions were fabricated, and electroluminescence (EL) spectra from them were studied. It was found that both the photoluminescence (PL) spectra of the InP NWs and the EL spectra of the heterojunctions blueshift from 920 to 775 nm when the electron concentrations of the InP NWs increase from 2 x 10 17 to 1.4 x 10 19 cm -3 . The blueshifts can be attributed to the Burstein-Moss effect rather than the quantum confinement effect in the InP NWs. The large blueshifts observed in this study indicate a potential application of InP NWs in nano-multicolour displays.

  2. Quantum effect on the energy levels of Eu2+ doped K2Ca2(SO4)3 nanoparticles.

    Science.gov (United States)

    Salah, Numan; Habib, Sami S; Khan, Zishan H

    2010-09-01

    Quantum confinement effect on the energy levels of Eu(2+) doped K(2)Ca(2)(SO(4))(3) nanoparticles has been observed. The broad photoluminescence (PL) emission band of Eu(2+) doped K(2)Ca(2)(SO(4))(3) microcrystalline sample observed at ∼436 nm is found to split into two narrow well resolved bands, located at 422 and 445 nm in the nanostructure form of this material. This has been attributed to the reduction in the crystal field strength of the nanomaterials, which results in widening the energy band gap and splitting the broad 4f(6)5d energy level of Eu(2+). Energy band gap values of the micro and nanocrystalline K(2)Ca(2)(SO(4))(3) samples were also determined by measuring the UV-visible absorption spectra. These values are 3.34 and 3.44 eV for the micro and nanocrystalline samples, respectively. These remarkable results suggest that activators having wide emission bands might be subjected to weak crystal strength via nanostructure materials to modify their electronic transitions. This might prove a powerful technique for producing new-advanced materials for use in the fields of solid state lasers and optoelectronic devises.

  3. Research Update: Strain and composition effects on ferromagnetism of Mn0.05Ge0.95 quantum dots

    Directory of Open Access Journals (Sweden)

    Liming Wang

    2016-04-01

    Full Text Available Mn0.05Ge0.95 quantum dots (QDs samples were grown by molecular beam epitaxy on Si substrates and 15-nm-thick fully strained Si0.8Ge0.2 virtual substrates, respectively. The QDs samples grown on the Si0.8Ge0.2 virtual substrates show a significant ferromagnetism with a Curie temperature of 227 K, while the QDs samples grown on the Si substrates are non-ferromagnetic. Microstructures of the QDs samples were characterized by high resolution transmission electron microscopy and synchrotron radiation X-ray diffraction. Interdependence between microstructure and ferromagnetism of Mn-doped Ge QDs was investigated. For the QDs sample grown on the strained Si0.8Ge0.2 virtual substrate, although the ferromagnetic phase Mn5Ge3 clusters were found to be formed in small dome-shaped dots, the significant ferromagnetism observed in that sample is attributed to ferromagnetic phase Mn-doped large dome-shaped Ge QDs, rather than to the ferromagnetic phase Mn5Ge3 clusters. The fully strained Si0.8Ge0.2 virtual substrates would result in a residual strain into the QDs and an increase in Ge composition in the QDs. Both consequences favor the formations of ferromagnetic phase Mn-doped Ge QDs from points of view of quantum confinement effect as well as Mn doping at substitutional sites.

  4. Black-body radiation effects and light shifts in atomic frequency standards

    Energy Technology Data Exchange (ETDEWEB)

    Pal' chikov, V G; Domnin, Yu S; Novoselov, A V [Institute of Metrology for Time and Space at National Research Institute for Physical-Technical and Radiotechnical Measurements - IMVP GP VNIIFTRI, Mendeleevo, Moscow Region, 141570 (Russian Federation)

    2003-04-01

    A general method is presented for calculating the higher-order terms of series in powers of the black-body radiation field for the Stark-state wavefunctions, dipole transition matrix elements and corresponding frequency shifts of hyperfine splitting in the ground states for Cs and Rb atoms. A numerical method for calculating the light shifts in Sr atoms is described. It is based on the Green function method for summation over all intermediate states and exact Dirac-Fock wavefunctions for the resonant transitions to the first excited s-, p- and d-states. By comparing the calculated Stark shift with results of measurements employing atomic frequency standards, the black-body radiation effects on the ground state are analysed.

  5. Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

    KAUST Repository

    Najar, Adel

    2012-01-01

    We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF <4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-O x, the HF treated samples exhibited significant blue PL peak shift of 100 nm. This effect has been correlated to the formation of defect states in the surface oxide. PSiNWs fabricated using the electroless etching method can find useful applications in optical sensors and as anti-reflection layer in silicon-based solar cells. © 2012 American Institute of Physics.

  6. PbSe Nanorod Field-Effect Transistors : Room- and Low-Temperature Performance

    NARCIS (Netherlands)

    Han, Lu; Balazs, Daniel M.; Shulga, Artem G.; Abdu-Aguye, Mustapha; Ma, Wanli; Loi, Maria Antonietta

    Lead chalcogenides with large exciton Bohr radius display strong quantum confinement, which make them applicable in a wide range of optoelectronic devices such as solar cells and photodetectors. Especially, 1D PbSe nanocrystals attract much attention with their potential for multiple exciton

  7. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    Energy Technology Data Exchange (ETDEWEB)

    Gadzhiyev, I. M., E-mail: idris.intop@mail.ru; Buyalo, M. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Gubenko, A. E. [Innolume GmbH (Germany); Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

  8. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    International Nuclear Information System (INIS)

    Gadzhiyev, I. M.; Buyalo, M. S.; Gubenko, A. E.; Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L.

    2016-01-01

    The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

  9. Perspective and potential of smart optical materials

    Science.gov (United States)

    Choi, Sang H.; Duzik, Adam J.; Kim, Hyun-Jung; Park, Yeonjoon; Kim, Jaehwan; Ko, Hyun-U.; Kim, Hyun-Chan; Yun, Sungryul; Kyung, Ki-Uk

    2017-09-01

    The increasing requirements of hyperspectral imaging optics, electro/photo-chromic materials, negative refractive index metamaterial optics, and miniaturized optical components from micro-scale to quantum-scale optics have all contributed to new features and advancements in optics technology. Development of multifunctional capable optics has pushed the boundaries of optics into new fields that require new disciplines and materials to maximize the potential benefits. The purpose of this study is to understand and show the fundamental materials and fabrication technology for field-controlled spectrally active optics (referred to as smart optics) that are essential for future industrial, scientific, military, and space applications, such as membrane optics, filters, windows for sensors and probes, telescopes, spectroscopes, cameras, light valves, light switches, and flat-panel displays. The proposed smart optics are based on the Stark and Zeeman effects in materials tailored with quantum dot arrays and thin films made from readily polarizable materials via ferroelectricity or ferromagnetism. Bound excitonic states of organic crystals are also capable of optical adaptability, tunability, and reconfigurability. To show the benefits of smart optics, this paper reviews spectral characteristics of smart optical materials and device technology. Experiments testing the quantum-confined Stark effect, arising from rare earth element doping effects in semiconductors, and applied electric field effects on spectral and refractive index are discussed. Other bulk and dopant materials were also discovered to have the same aspect of shifts in spectrum and refractive index. Other efforts focus on materials for creating field-controlled spectrally smart active optics on a selected spectral range. Surface plasmon polariton transmission of light through apertures is also discussed, along with potential applications. New breakthroughs in micro scale multiple zone plate optics as a micro

  10. Potential effect of CuInS2/ZnS core-shell quantum dots on P3HT/PEDOT:PSS heterostructure based solar cell

    Science.gov (United States)

    Jindal, Shikha; Giripunje, S. M.

    2018-07-01

    Nanostructured quantum dots (QDs) are quite promising in the solar cell application due to quantum confinement effect. QDs possess multiple exciton generation and large surface area. The environment friendly CuInS2/ZnS core-shell QDs were prepared by solvothermal method. Thus, the 3 nm average sized CuInS2/ZnS QDs were employed in the bulk heterojunction device and the active blend layer consisting of the P3HT and CuInS2/ZnS QDs was investigated. The energy level information of CuInS2/ZnS QDs as an electron acceptor was explored by ultra violet photoelectron spectroscopy. Bulk heterojunction hybrid device of ITO/PEDOT:PSS/P3HT: (CuInS2/ZnS QDs)/ZnO/Ag was designed by spin coating approach and its electrical characterization was investigated by solar simulator. Current density - voltage characteristics shows the enhancement in power conversion efficiency with increasing concentration of CuInS2/ZnS QDs in bulk heterojunction device.

  11. Generated carrier dynamics in V-pit enhanced InGaN/GaN light emitting diode

    KAUST Repository

    Ajia, Idris A.

    2017-12-18

    We investigate the effects of V-pits on the optical properties of a state-of-the art highly efficient, blue InGaN/GaN multi-quantum-well (MQW) light emitting diode (LED) with high internal quantum efficiency (IQE) of > 80%. The LED is structurally enhanced by incorporating pre-MQW InGaN strain-relief layer with low InN content and patterned sapphire substrate. For comparison, a conventional (unenhanced) InGaN/GaN MQW LED (with IQE of 46%) grown under similar conditions was subjected to the same measurements. Scanning transmission electron microscopy (STEM) reveals the absence of V-pits in the unenhanced LED, whereas in the enhanced LED, V-pits with {10-11} facets, emerging from threading dislocations (TDs) were prominent. Cathodoluminescence mapping reveals the luminescence properties near the V-pits, showing that the formation of V-pit defects can encourage the growth of defect-neutralizing barriers around TD defect states. The diminished contribution of TDs in the MQWs allows indium-rich localization sites to act as efficient recombination centers. Photoluminescence and time-resolved spectroscopy measurements suggest that the V-pits play a significant role in the generated carrier rate and droop mechanism, showing that the quantum confined Stark effect is suppressed at low generated carrier density, after which the carrier dynamics and droop are governed by the carrier overflow effect.

  12. Hybrid optoelectronic device with multiple bistable outputs

    Energy Technology Data Exchange (ETDEWEB)

    Costazo-Caso, Pablo A; Jin Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad, E-mail: pcostanzo@ing.unlp.edu.are, E-mail: granieri@rose-hulma.edu, E-mail: siahmako@rose-hulma.edu [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, IN 47803 (United States)

    2011-01-01

    Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

  13. Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

    International Nuclear Information System (INIS)

    Feng, Shih-Wei; Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

    2015-01-01

    Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED

  14. High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate.

    Science.gov (United States)

    Muhammed, Mufasila M; Alwadai, Norah; Lopatin, Sergei; Kuramata, Akito; Roqan, Iman S

    2017-10-04

    We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga 2 O 3 ) substrate, obtained using a straightforward growth process that does not require a high-cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multiquantum well (MQW) grown on the masked β-Ga 2 O 3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ∼86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

  15. High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

    KAUST Repository

    Muhammed, Mufasila; Alwadai, Norah Mohammed Mosfer; Lopatin, Sergei; Kuramata, Akito; Roqan, Iman S.

    2017-01-01

    We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

  16. High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

    KAUST Repository

    Muhammed, Mufasila

    2017-09-11

    We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

  17. Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Shih-Wei, E-mail: swfeng@nuk.edu.tw; Liao, Po-Hsun [Department of Applied Physics, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan Tzu Dist., 811 Kaohsiung, Taiwan (China); Leung, Benjamin; Han, Jung [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Yang, Fann-Wei [Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan, Taiwan (China); Wang, Hsiang-Chen [Graduate Institute of Opto-Mechatronics and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chia-Yi, Taiwan (China)

    2015-07-28

    Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

  18. Effect of backbond oxidation on silicon nanocrystallites

    International Nuclear Information System (INIS)

    Ramos, L.E.; Furthmueller, J.; Bechstedt, F.

    2004-01-01

    We employ density functional calculations to study properties of Si nanocrystals after backbond oxidation in comparison to the ones passivated with hydrogen or hydroxyl. Structural parameters, pair excitation energies, quasiparticle gaps, and electrostatic potentials vary significantly in dependence on degree of oxidation and surface passivation. The variations are discussed within a quantum confinement picture. Blueshifts and redshifts observed in photoluminescence are related to the size of the Si nanocrystallite cores and the oxygen incorporation via passivation with group OH or oxidation

  19. Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

    Science.gov (United States)

    Wang, T.

    2016-09-01

    The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.

  20. Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

    Science.gov (United States)

    Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis

    2015-03-01

    Reduced electric field in semipolar (1122) GaN/InGaN heterostructures makes this orientation attractive for high efficiency light emitting diodes. In this work, we investigated indium incorporation in semipolar (1122) GaN grown by metal-organic chemical vapor deposition on planar m-plane sapphire substrates. Indium content in the semipolar material was compared with that in polar c-plane samples grown under the same conditions simultaneously side by side on the same holder. The investigated samples incorporated dual GaN/InGaN/GaN double heterostructures with 3nm wide wells. In order to improve optical quality, both polar and semipolar templates were grown using an in-situ epitaxial lateral overgrowth (ELO) technique. Indium incorporation efficiency was derived from the comparison of PL spectra measured on the semipolar and polar structures at the highest excitation density, which allowed us to minimize the effect of quantum confined Stark effect on the emission wavelength. Our data suggests increased indium content in the semipolar material by up to 3.0%, from 15% In in c- GaN to 18% In in (1122) GaN.

  1. Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

    International Nuclear Information System (INIS)

    Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

    2017-01-01

    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

  2. Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

    International Nuclear Information System (INIS)

    Christian, George M.; Hammersley, Simon; Davies, Matthew J.; Dawson, Philip; Kappers, Menno J.; Massabuau, Fabien C.P.; Oliver, Rachel A.; Humphreys, Colin J.

    2016-01-01

    We report on the effects of varying the number of quantum wells (QWs) in an InGaN/GaN multiple QW (MQW) structure containing a 23 nm thick In0.05Ga0.95N prelayer doped with Si. The calculated conduction and valence bands for the structures show an increasing total electric field across the QWs with increasing number of QWs. This is due to the reduced strength of the surface polarisation field, which opposes the built-in field across the QWs, as its range is increased over thicker samples. Low temperature photoluminescence (PL) measurements show a red shifted QW emission peak energy, which is attributed to the enhanced quantum confined Stark effect with increasing total field strength across the QWs. Low temperature PL time decay measurements and room temperature internal quantum efficiency (IQE) measurements show decreasing radiative recombination rates and decreasing IQE, respectively, with increasing number of QWs. These are attributed to the increased spatial separation of the electron and hole wavefunctions, consistent with the calculated band profiles. It is also shown that, for samples with fewer QWs, the reduction of the total field across the QWs makes the radiative recombination rate sufficiently fast that it is competitive with the efficiency losses associated with the thermal escape of carriers. (copyright 2016 The Authors. Phys. Status Solidi C published by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

    International Nuclear Information System (INIS)

    Boxberg, Fredrik; Tulkki, Jukka

    2007-01-01

    Strain-induced quantum dots (SIQD) confine electrons and holes to a lateral potential minimum within a near-surface quantum well (QW). The potential minimum is located in the QW below a nanometre-sized stressor crystal grown on top of the QW. SIQD exhibit well-resolved and prominently atomic-like optical spectra, making them ideal for experimental and theoretical studies of mesoscopic phenomena in semiconductor nanocrystals. In this report we review the theory of strain-induced confinement, electronic structure, photonics and carrier relaxation dynamics in SIQD. The theoretical results are compared with available experimental data. Electronic structure calculations are mainly performed using the multiband envelope function approach. Many-body effects are discussed using a direct diagonalization method, albeit, for the sake of computational feasibility, within a two-band model. The QD carrier dynamics are discussed in terms of a master equation model, which accounts for the details of the electronic structure as well as the leading photon, phonon and Coulomb interaction processes. We also discuss the quantum confined Stark effect, the Zeeman splitting and the formation of Landau levels in external fields. Finally, we review a recent theory of the cooling of radiative QD excitons by THz radiation. In particular we discuss the resonance charge transfer of holes between piezoelectric trap states and the deformation potential minima. The agreement between the theory and experiment is fair throughout, but calls for further investigations

  4. The pH-dependent photoluminescence of colloidal CdSe/ZnS quantum dots with different organic coatings

    International Nuclear Information System (INIS)

    Debruyne, David; Locquet, Jean-Pierre; Van Bael, Margriet J; Deschaume, Olivier; Bartic, Carmen; Coutiño-Gonzalez, Eduardo; Hofkens, Johan

    2015-01-01

    The photoluminescence (PL) of colloidal quantum dots (QDs) is known to be sensitive to the solution pH. In this work we investigate the role played by the organic coating in determining the pH-dependent PL. We compare two types of CdSe/ZnS QDs equipped with different organic coatings, namely dihydrolipoic acid (DHLA)-capped QDs and phospholipid micelle-encapsulated QDs. Both QD types have their PL intensity quenched at acidic pH values, but they differ in terms of the reversibility of the quenching process. For DHLA-capped QDs, the quenching is nearly irreversible, with a small reversible component visible only on short time scales. For phospholipid micelle-encapsulated QDs the quenching is notably almost fully reversible. We suggest that the surface passivation by the organic ligands is reversible for the micelle-encapsulated QDs. Additionally, both coatings display pH-dependent spectral shifts. These shifts can be explained by a combination of irreversible processes, such as photo-oxidation and acid etching, and reversible charging of the QD surface, leading to the quantum-confined Stark effect (QCSE), the extent of each effect being coating-dependent. At high ionic strengths, the aggregation of QDs also leads to a spectral (red) shift, which is attributable to the QCSE and/or electronic energy transfer. (paper)

  5. Structural design and optimization of near-ultraviolet light-emitting diodes with wide wells

    Energy Technology Data Exchange (ETDEWEB)

    Kuo, Yen-Kuang, E-mail: ykuo@cc.ncue.edu.tw [Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China); Chen, Fang-Ming [Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China); Chang, Jih-Yuan [Center for Teacher Education, National Changhua University of Education, Changhua 500, Taiwan (China); Shih, Ya-Hsuan [Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan (China)

    2016-03-07

    The characteristics of the near-ultraviolet (NUV) light-emitting diodes (LEDs) with wide (14-nm-thick) and narrow (2-nm-thick) wells under the situations of different numbers of wells and degree of polarization are systematically investigated. The simulation results show that the Auger recombination can be efficiently suppressed with the increase of number of wells in NUV LEDs. For the LEDs with wide wells, the quantum-confined Stark effect and Shockley–Read–Hall recombination play an important role when the number of wells increases, especially when the LED is under low current injection or high degree of polarization. In order to take the advantage of using wide wells, it is proposed that the quaternary Al{sub 0.1}In{sub 0.05}Ga{sub 0.85}N barriers be used in wide-well NUV LEDs along with the use of Al{sub 0.3}Ga{sub 0.7}N/Al{sub 0.1}Ga{sub 0.9}N superlattice electron-blocking layer to mitigate the polarization effect and electron overflow. With this band-engineering structural design, the optical performance of the wide-well NUV LEDs is much better than its thin-well counterpart even under the situation of high degree of polarization.

  6. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Guangyang Lin

    2016-09-01

    Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

  7. Color deviations in phosphor converted high power light emitting diodes under different dimming schemes

    International Nuclear Information System (INIS)

    Ludwiczak, Bogna; Jantsch, Wolfgang

    2015-01-01

    We investigate experimentally the color stability of high power phosphor converted InGaN LEDs under pulse width modulation (PWM) and continuous current reduction (CCR) dimming modes and for varied operation temperatures. Our measurements reveal that the chromaticity coordinate pathways of the warm white and the cold white LED's differ for the same operation conditions. The color deviation- minimizing phenomenon of opposite peak wavelength shifts appears only for a cold white LED under CCR driving mode. This favorable effect does not occur for warm white LEDs. This type of LED exhibits the best color stability under PWM driving mode. The experimental results are consistently explained in terms of the quantum confined Stark effect and temperature induced changes of the LED emission. - Highlights: • Cold and warm white LEDs reacts colorimetrically unlike in different driving modes. • For cold white emission driving conditions are crucial. • Opposite peak wavelength shifts reduces color deviations for cold white emission. • For warm white emission rather phosphor properties determines color deviations

  8. Spatially and spectrally resolved photoluminescence of InGaN MQWs grown on highly Si doped a-plane GaN buffer

    Energy Technology Data Exchange (ETDEWEB)

    Thunert, Martin; Wieneke, Matthias; Dempewolf, Anja; Bertram, Frank; Dadgar, Armin; Krost, Alois; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany)

    2011-07-01

    A set of InGaN multi quantum well (MQW) samples grown by MOVPE on highly Si doped a-plane GaN on r-plane sapphire templates has been investigated using spatially resolved photoluminescence spectroscopy ({mu}-PL). The Si doping level of nominal about 10{sup 20} cm{sup -3} leads to three dimensionally grown crystallites mostly terminated by m-facets. The MQW thickness has been systematically varied from nominally 2.1 to 4.2 nm, as well as the InGaN growth temperature, which was varied from 760 C to 700 C. The growth of a-plane GaN based devices leads to a non-polar growth direction avoiding the polarization field affected Quantum-Confined-Stark-Effect. Spatially resolved PL studies show for all samples low near band edge (NBE) GaN emission intensity over the whole area under investigation accompanied by highly intense InGaN MQW emission for single crystallites. The MQW luminescence shows a systematic blueshift with increasing InGaN growth temperature due to lower In incorporation as well as a systematic redshift with increasing MQW thickness. Excitation power dependent spectra at 4 K as well as temperature dependent PL spectra will be presented.

  9. Optoelectronical properties of InGaN quantum well light emitting diodes on semipolar GaN

    Energy Technology Data Exchange (ETDEWEB)

    Rass, Jens; Stascheit, Marcus; Ploch, Simon; Wernicke, Tim; Vogt, Patrick; Kneissl, Michael [Technische Universitaet Berlin, Institute of Solid State Physics, Secretariat EW6-1, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2011-07-01

    The performance of GaN-based light emitting diodes (LEDs) is strongly affected by polarization fields along the c-axis of the crystal. Due to the resulting quantum-confined Stark effect the radiative transition rate is reduced and the emission wavelength is blue-shifted when carriers are injected. By growing the structures on semipolar or nonpolar planes the polarization fields can be significantly reduced or even eliminated. In this work, InGaN single quantum well LEDs have been grown by metal-organic vapor phase epitaxy on different semipolar surfaces such as the (10 anti 11) and (20 anti 21) plane. The optoelectronic properties such as the light output power, the emission wavelength and its shift with injection current as well as the operating voltage have been studied. By employing capacitance-voltage- and current-voltage measurements, the size of the depletion region, the build-in potential, the saturation current and the doping concentrations have been determined. LEDs with emission wavelengths ranging from the violet to the blue and green region are presented and their performance characteristics are compared to LEDs grown on the polar c-plane surface.

  10. Facet formation and ohmic contacts for laser diodes on non- and semipolar GaN

    Energy Technology Data Exchange (ETDEWEB)

    Rass, Jens; Ploch, Simon; Vogt, Patrick [Technische Universitaet Berlin (Germany). Institute of Solid State Physics; Wernicke, Tim; Redaelli, Luca; Einfeldt, Sven [Ferdinand- Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Technische Universitaet Berlin (Germany). Institute of Solid State Physics; Ferdinand- Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany)

    2009-07-01

    Group-III-Nitride heterostructures grown on nonpolar and semipolar planes allow the realization of highly efficient devices such as laser diodes and LEDs due to the reduction or elimination of the quantum confined Stark effect. However, the realization of these devices poses a number of challenges, in particular the formation of smooth laser facets and the fabrication of ohmic contacts. In this talk optimized schemes for facet formation and contact resistance reduction for nitride based devices on non- and semipolar planes are presented, and various concepts are discussed. We discuss a laser scribing process that allows the cleaving of facets along the c- and a-plane for devices grown on nonpolar substrates. For semipolar planes there is no low-index cleavage plane in order to form resonators along the projection of the c-axis. Therefore we have investigated etching techniques in order to produce flat facets perpendicular to the plane of growth. For the challenging formation of p-type contacts to GaN we discuss different methods such as chemical treatments, different metallization schemes and capping layers to reduce the contact resistivity.

  11. On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy

    KAUST Repository

    Mishra, Pawan; Janjua, Bilal; Ng, Tien Khee; Anjum, Dalaver H.; Elafandy, Rami T.; Prabaswara, Aditya; Shen, Chao; Salhi, Abdelmajid; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2016-01-01

    In this paper, c-plane stepped- and graded- InGaN/GaN multiple quantum wells (MQWs) are grown using plasma assisted molecular beam epitaxy (PAMBE) by in situ surface stoichiometry monitoring (i-SSM). Such a technique considerably reduces the strain build-up due to indium clustering within and across graded-MQWs; especially for QW closer to the top which results in mitigation of the quantum-confined Stark effect (QCSE). This is validated by a reduced power dependent photoluminescence blueshift of 10 meV in graded-MQWs as compared to a blueshift of 17 meV for stepped-MQWs. We further analyze microstrain within the MQWs, using Raman spectroscopy and geometrical phase analysis (GPA) on high-angle annular dark-field (HAADF)-scanning transmission electron microscope (STEM) images of stepped- and graded-MQWs, highlighting the reduction of ~1% strain in graded-MQWs over stepped-MQWs. Our analysis provides direct evidence of the advantage of graded-MQWs for the commercially viable c-plane light-emitting and laser diodes. © 2016 Optical Society of America.

  12. Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering

    KAUST Repository

    Liu, Kaikai

    2017-11-30

    The spontaneous polarization (SP) and piezoelectric (PZ) constants of BxAl1-xN and BxGa1-xN (0 ≤ x ≤ 1) ternary alloys were calculated with the hexagonal structure as reference. The SP constants show moderate nonlinearity due to the volume deformation and the dipole moment difference between the hexagonal and wurtzite structures. The PZ constants exhibit significant bowing because of the large lattice difference between binary alloys. Furthermore, the PZ constants of BxAl1-xN and BxGa1-xN become zero at boron compositions of ∼87% and ∼74%, respectively, indicating non-piezoelectricity. The large range of SP and PZ constants of BxAl1-xN (BAlN) and BxGa1-xN (BGaN) can be beneficial for the compound semiconductor device development. For instance, zero heterointerface polarization ΔP can be formed for BAlN and BGaN based heterojunctions with proper B compositions, potentially eliminating the quantum-confined Stark effect for c-plane optical devices and thus removing the need of non-polar layers and substrates. Besides, large heterointerface polarization ΔP is available that is desirable for electronic devices.

  13. Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

    Energy Technology Data Exchange (ETDEWEB)

    Laucht, Arne; Villas-Boas, Jose M.; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany)

    2010-07-01

    We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nanocavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nanocavity mode. Photoluminescence measurements show a characteristic triple peak during the double anticrossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced.

  14. Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

    Energy Technology Data Exchange (ETDEWEB)

    Villas-Boas, Jose M. [Universidade Federal de Uberlandia (UFU), MG (Brazil). Inst. de Fisica; Laucht, Arne; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Technische Universitaet Muenchen, Garching (Germany). Walter Schottky Inst.

    2011-07-01

    Full text. We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nano cavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nano cavity mode. Photoluminescence measurements show a characteristic triple peak during the double anti crossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced

  15. 3-5 modulation and switching devices for optical systems applications

    Science.gov (United States)

    Singh, Jasprit; Bhattacharya, Pallab

    1995-04-01

    The thrust for this three year program has been to develop novel devices and systems applications for multiple quantum well based devices. We have investigated architectures based upon the quantum confined Stark effect (QCSE), a means by which excitonic resonances in a quantum well are electric field tuned to shift the peaked absorption spectrum of the material. The devices based upon this concept have been used, in the past, to realize switching structures employing the characteristic negative differential resistance available in PIN-MQW diodes under illumination. We have focuses, primarily on three schemes based upon the QCSE, to extend the utility of quantum well based devices. Firstly, we have developed, tested and optimized a novel tunable optical filter for wavelength selective applications. Secondly, we have demonstrated an MQW based scheme for optical pattern recognition which we have applied towards header recognition in a packet switching network environment. Thirdly, we have extended previous MQW based switching schemes to implement an optical read only memory (ROM) which can store two bits of information on a single sight, read by two different probe wavelengths of light.

  16. Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods

    International Nuclear Information System (INIS)

    Wang, Q; Bai, J; Gong, Y P; Wang, T

    2011-01-01

    Optical investigation has been carried out on InGaN/GaN nanorod structures with different indium compositions, fabricated from InGaN/GaN multiple quantum well (MQW) epitaxial wafers using a self-organized nickel nano-mask and subsequent dry etching techniques. In comparison with the as-grown InGaN/GaN MQWs, the internal quantum efficiencies of the nanorods are significantly improved, in particular, for the green InGaN/GaN nanorods with a high indium composition, the internal quantum efficiency is enhanced by a factor of 8, much larger than the enhancement factor of 3.4 for the blue InGaN/GaN nanorods. X-ray reciprocal space mapping (RSM) measurements have been performed in order to quantitatively evaluate the stain relaxation in the nanorods, demonstrating that the majority of strain in InGaN/GaN MQWs can be relaxed as a result of fabrication into nanorods. The excitation-power-dependent photoluminescence measurements have also clearly shown that a significant reduction in the strain-induced quantum confined stark effect has occurred to the nanorod structures.

  17. InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

    Science.gov (United States)

    Teubert, J.; Koslowski, S.; Lippert, S.; Schäfer, M.; Wallys, J.; Dimitrakopulos, G.; Kehagias, Th.; Komninou, Ph.; Das, A.; Monroy, E.; Eickhoff, M.

    2013-08-01

    We investigated the electric-field dependence of the photoluminescence-emission properties of InGaN/GaN quantum dot multilayers in contact with an electrolyte. Controlled variations of the surface potential were achieved by the application of external electric fields using the electrolytic Schottky contact and by variation of the solution's pH value. Prior to characterization, a selective electrochemical passivation process was required to suppress leakage currents. The quantum dot luminescence is strongly affected by surface potential variations, i.e., it increases exponentially with cathodic bias and acidic pH values. The results cannot be explained by a modification of intra-dot polarization induced electric fields via the quantum confined Stark effect but are attributed to the suppression/enhancement of non-radiative recombination processes, i.e., mainly hole transfer into the electrolyte. The results establish a link between the photoluminescence intensity and the magnitude of electric fields at the semiconductor/electrolyte interface.

  18. The infrared retina

    International Nuclear Information System (INIS)

    Krishna, Sanjay

    2009-01-01

    As infrared imaging systems have evolved from the first generation of linear devices to the second generation of small format staring arrays to the present 'third-gen' systems, there is an increased emphasis on large area focal plane arrays (FPAs) with multicolour operation and higher operating temperature. In this paper, we discuss how one needs to develop an increased functionality at the pixel level for these next generation FPAs. This functionality could manifest itself as spectral, polarization, phase or dynamic range signatures that could extract more information from a given scene. This leads to the concept of an infrared retina, which is an array that works similarly to the human eye that has a 'single' FPA but multiple cones, which are photoreceptor cells in the retina of the eye that enable the perception of colour. These cones are then coupled with powerful signal processing techniques that allow us to process colour information from a scene, even with a limited basis of colour cones. Unlike present day multi or hyperspectral systems, which are bulky and expensive, the idea would be to build a poor man's 'infrared colour' camera. We use examples such as plasmonic tailoring of the resonance or bias dependent dynamic tuning based on quantum confined Stark effect or incorporation of avalanche gain to achieve embodiments of the infrared retina.

  19. Development of a high throughput single-particle screening for inorganic semiconductor nanorods as neural voltage sensor

    Science.gov (United States)

    Kuo, Yung; Park, Kyoungwon; Li, Jack; Ingargiola, Antonino; Park, Joonhyuck; Shvadchak, Volodymyr; Weiss, Shimon

    2017-08-01

    Monitoring membrane potential in neurons requires sensors with minimal invasiveness, high spatial and temporal (sub-ms) resolution, and large sensitivity for enabling detection of sub-threshold activities. While organic dyes and fluorescent proteins have been developed to possess voltage-sensing properties, photobleaching, cytotoxicity, low sensitivity, and low spatial resolution have obstructed further studies. Semiconductor nanoparticles (NPs), as prospective voltage sensors, have shown excellent sensitivity based on Quantum confined Stark effect (QCSE) at room temperature and at single particle level. Both theory and experiment have shown their voltage sensitivity can be increased significantly via material, bandgap, and structural engineering. Based on theoretical calculations, we synthesized one of the optimal candidates for voltage sensors: 12 nm type-II ZnSe/CdS nanorods (NRs), with an asymmetrically located seed. The voltage sensitivity and spectral shift were characterized in vitro using spectrally-resolved microscopy using electrodes grown by thin film deposition, which "sandwich" the NRs. We characterized multiple batches of such NRs and iteratively modified the synthesis to achieve higher voltage sensitivity (ΔF/F> 10%), larger spectral shift (>5 nm), better homogeneity, and better colloidal stability. Using a high throughput screening method, we were able to compare the voltage sensitivity of our NRs with commercial spherical quantum dots (QDs) with single particle statistics. Our method of high throughput screening with spectrally-resolved microscope also provides a versatile tool for studying single particles spectroscopy under field modulation.

  20. On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy

    KAUST Repository

    Mishra, Pawan

    2016-05-23

    In this paper, c-plane stepped- and graded- InGaN/GaN multiple quantum wells (MQWs) are grown using plasma assisted molecular beam epitaxy (PAMBE) by in situ surface stoichiometry monitoring (i-SSM). Such a technique considerably reduces the strain build-up due to indium clustering within and across graded-MQWs; especially for QW closer to the top which results in mitigation of the quantum-confined Stark effect (QCSE). This is validated by a reduced power dependent photoluminescence blueshift of 10 meV in graded-MQWs as compared to a blueshift of 17 meV for stepped-MQWs. We further analyze microstrain within the MQWs, using Raman spectroscopy and geometrical phase analysis (GPA) on high-angle annular dark-field (HAADF)-scanning transmission electron microscope (STEM) images of stepped- and graded-MQWs, highlighting the reduction of ~1% strain in graded-MQWs over stepped-MQWs. Our analysis provides direct evidence of the advantage of graded-MQWs for the commercially viable c-plane light-emitting and laser diodes. © 2016 Optical Society of America.

  1. Size effect on the SHG properties of Cu-doped CdI2 nanocrystals

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2009-01-01

    Because the optically induced second harmonic generation (SHG) is prevented by symmetry in a centrosymmetric material, one needs to form noncentrosymmetric processes in order to observe the SHG. However, one of the efficient ways to enhance the noncentrosymmetricity of a material is to dope it with an appropriate impurity and amount. We grow Cu-doped CdI 2 layered nanocrystal structures from the mixture of CdI 2 and CuI using the standard Bridgman-Stockbarger method and investigate the nano-confined effects by studying the second-order optical effect via the measurements of SHG. The second-order susceptibility for the nanocrystals is calculated and the values at liquid helium temperature range from 0.38 to 0.83 pm V -1 for the thicknesses of 10-0.8 nm respectively. The size dependence demonstrates the nano-sized quantum-confined effect with a clear increase in the SHG with decreasing the thickness of the nanocrystal or crystal temperature. Since the local electron-phonon anharmonicity is described by third-order rank tensors in disordered systems, the SHG is very similar to that one introduced for the third-order optical susceptibility. It has been confirmed by observing the large photoluminescent yield of the pure crystals. The Raman scattering spectra taken for thin nanocrystals confirm the phonon modes originating from interlayer phonons crucially responsible for the observed effects. The obtained results show that the Cu-doped CdI 2 layered nanocrystals are promising materials for applications in optoelectronic nano-devices.

  2. Size effect on the SHG properties of Cu-doped CdI{sub 2} nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

    2009-12-15

    Because the optically induced second harmonic generation (SHG) is prevented by symmetry in a centrosymmetric material, one needs to form noncentrosymmetric processes in order to observe the SHG. However, one of the efficient ways to enhance the noncentrosymmetricity of a material is to dope it with an appropriate impurity and amount. We grow Cu-doped CdI{sub 2} layered nanocrystal structures from the mixture of CdI{sub 2} and CuI using the standard Bridgman-Stockbarger method and investigate the nano-confined effects by studying the second-order optical effect via the measurements of SHG. The second-order susceptibility for the nanocrystals is calculated and the values at liquid helium temperature range from 0.38 to 0.83 pm V{sup -1} for the thicknesses of 10-0.8 nm respectively. The size dependence demonstrates the nano-sized quantum-confined effect with a clear increase in the SHG with decreasing the thickness of the nanocrystal or crystal temperature. Since the local electron-phonon anharmonicity is described by third-order rank tensors in disordered systems, the SHG is very similar to that one introduced for the third-order optical susceptibility. It has been confirmed by observing the large photoluminescent yield of the pure crystals. The Raman scattering spectra taken for thin nanocrystals confirm the phonon modes originating from interlayer phonons crucially responsible for the observed effects. The obtained results show that the Cu-doped CdI{sub 2} layered nanocrystals are promising materials for applications in optoelectronic nano-devices.

  3. Szilard-Chalmers effect in natural. cap alpha. disintegrations

    Energy Technology Data Exchange (ETDEWEB)

    Haissinsky, M; Cottin, M

    1948-11-01

    The Szilard-Chalmers effect resulting from the reaction UI(/sup 238/U) ..-->.. UX1(/sup 234/Th) was investigated. The authors developed a chemical method adapted from a technique of Starke (Naturwissenschaften 30, 577(1942)) to separate UX1 which was formed by ..cap alpha.. emission. The experimental accuracy is insufficient to indicate the influence of the degree of dilution of the chemical solutions used on the efficiency of separation, but it is shown that there is a marked decrease in efficiency when solid compounds are used, which is consistent with a hypothesis of Franck and Rabinowitsch (Trans. Faraday Soc. 30, 120(1934)).

  4. Quantum Dot Photovoltaics in the Extreme Quantum Confinement Regime: The Surface-Chemical Origins of Exceptional Air- and Light-Stability

    KAUST Repository

    Tang, Jiang; Brzozowski, Lukasz; Barkhouse, D. Aaron R.; Wang, Xihua; Debnath, Ratan; Wolowiec, Remigiusz; Palmiano, Elenita; Levina, Larissa; Pattantyus-Abraham, Andras G.; Jamakosmanovic, Damir; Sargent, Edward H.

    2010-01-01

    We report colloidal quantum dot (CQDs) photovoltaics having a ∼930 nm bandgap. The devices exhibit AM1.5G power conversion efficiencies in excess of 2%. Remarkably, the devices are stable in air under many tens of hours of solar illumination without

  5. Advanced Luminescent Materials and Quantum Confinement: Proceedings of the International Symposium Held in Honolulu, Hawaii on 18-20 October 1999

    National Research Council Canada - National Science Library

    Cahay, Marc

    1999-01-01

    The symposium addresses recent developments in the area of nanoscale semiconductors, metallic, and organic structures, porous silicon quantum dot structures self-ordered nanostructures and clusters...

  6. Quantum Dot Photovoltaics in the Extreme Quantum Confinement Regime: The Surface-Chemical Origins of Exceptional Air- and Light-Stability

    KAUST Repository

    Tang, Jiang

    2010-02-23

    We report colloidal quantum dot (CQDs) photovoltaics having a ∼930 nm bandgap. The devices exhibit AM1.5G power conversion efficiencies in excess of 2%. Remarkably, the devices are stable in air under many tens of hours of solar illumination without the need for encapsulation. We explore herein the origins of this ordersof-magnitude improvement in air stability compared to larger PbS dots. We find that small and large dots form dramatically different oxidation products, with small dots forming lead sulfite primarily and large dots, lead sulfate. The lead sulfite produced on small dots results in shallow electron traps that are compatible with excellent device performance; whereas the sulfates formed on large dots lead to deep traps, midgap recombination, and consequent catastrophic loss of performance. We propose and offer evidence in support of an explanation based on the high rate of oxidation of sulfur-rich surfaces preponderant in highly faceted large-diameter PbS colloidal quantum dots. © 2010 American Chemical Society.

  7. Quantum confinement-tunable intersystem crossing and the triplet state lifetime of cationic porphyrin–CdTe quantum dot nano-assemblies

    KAUST Repository

    Ahmed, Ghada H.

    2015-03-27

    Here, we report a ground-state interaction between the positively charged cationic porphyrin and the negatively charged carboxylate groups of the thiol ligands on the surface of CdTe quantum dots (QDs), leading to the formation of a stable nanoassembly between the two components. Our time-resolved data clearly demonstrate that we can dramatically tune the intersystem crossing (ISC) and the triplet state lifetime of porphyrin by changing the size of the QDs in the nanoassembly.

  8. Quantum confinement-tunable intersystem crossing and the triplet state lifetime of cationic porphyrin–CdTe quantum dot nano-assemblies

    KAUST Repository

    Ahmed, Ghada H.; Aly, Shawkat Mohammede; Usman, Anwar; Eita, Mohamed Samir; Melnikov, Vasily; Mohammed, Omar F.

    2015-01-01

    Here, we report a ground-state interaction between the positively charged cationic porphyrin and the negatively charged carboxylate groups of the thiol ligands on the surface of CdTe quantum dots (QDs), leading to the formation of a stable nanoassembly between the two components. Our time-resolved data clearly demonstrate that we can dramatically tune the intersystem crossing (ISC) and the triplet state lifetime of porphyrin by changing the size of the QDs in the nanoassembly.

  9. The effect of substrate temperature on atomic layer deposited zinc tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Lindahl, Johan, E-mail: johan.lindahl@angstrom.uu.se; Hägglund, Carl, E-mail: carl.hagglund@angstrom.uu.se; Wätjen, J. Timo, E-mail: timo.watjen@angstrom.uu.se; Edoff, Marika, E-mail: marika.edoff@angstrom.uu.se; Törndahl, Tobias, E-mail: tobias.torndahl@angstrom.uu.se

    2015-07-01

    Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO{sub x} ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm{sup 3} in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap.

  10. The effect of substrate temperature on atomic layer deposited zinc tin oxide

    International Nuclear Information System (INIS)

    Lindahl, Johan; Hägglund, Carl; Wätjen, J. Timo; Edoff, Marika; Törndahl, Tobias

    2015-01-01

    Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO x ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm 3 in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap

  11. Investigations of the thermal treatment effect on the generation of cadmium sulfide clusters in polymeric films

    International Nuclear Information System (INIS)

    Stanculescu, Anca; Socol, M.; Stanculescu, F.

    2002-01-01

    In the last years a special interest has been paid to the field of nanometer-sized semiconductor compound crystalline clusters synthesized in different matrix (inorganic or organic), due to their special physical and chemical properties intermediate between the molecular and bulk limits. To obtain the thin film samples of CdS particles embedded in a polymeric transparent matrix, as bisphenol A polycarbonate, we followed a process containing three important steps: preparation of the so-called 'mother solution', film deposition and thermal treatment. The samples obtained after the first two steps were heat treated at different temperatures (90 deg. C and 150 deg. C) for 0.5 h, 1 h and 1.5 h, and we have analyzed the influence of these parameters on the film quality using UV-VIS spectrophotometric methods. This paper presents a study of the influence of the thermal treatment on the CdS clusters' generation process and film quality and homogeneity. The parameters of the processing procedure of the polymeric film, as the cooling rate, have a great influence on the rate of germination and development of the crystalline phase. A slow cooling rate is a more favorable process for CdS clusters' formation, indicated .by structured features of the fundamental absorption situated between 350-450 nm. When the temperature for thermal treatment increases to 90 deg. C a sharp rise and a shift to shorter wavelengths of the absorption onset edge was observed. This shift proves the existence of a weak quantum confinement effects. We concluded that these two parameters have some equivalent effects on the CdS clusters' generation in polymeric matrix. Varying the treatment duration with a fixed temperature produces similar results as the fixed duration, varied temperature treatment. (authors)

  12. Switching-on quantum size effects in silicon nanocrystals.

    Science.gov (United States)

    Sun, Wei; Qian, Chenxi; Wang, Liwei; Wei, Muan; Mastronardi, Melanie L; Casillas, Gilberto; Breu, Josef; Ozin, Geoffrey A

    2015-01-27

    The size-dependence of the absolute luminescence quantum yield of size-separated silicon nanocrystals reveals a "volcano" behavior, which switches on around 5 nm, peaks at near 3.7-3.9 nm, and decreases thereafter. These three regions respectively define: i) the transition from bulk to strongly quantum confined emissive silicon, ii) increasing confinement enhancing radiative recombination, and iii) increasing contributions favoring non-radiative recombination. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Charge separation in branched TiO{sub 2} nanorod array homojunction aroused by quantum effect for enhanced photocatalytic decomposition of gaseous benzene

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaoxia [State Key Laboratory of Materials and Processing Die & Mould Technology, Nanomaterials and Smart Sensors Research Laboratory, Department of Materials Science and Engineering, Huazhong University of Science and Technology, No. 1037, Luoyu Road, Wuhan 430074 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Wuhan 430062 (China); Ni, Qian [State Key Laboratory of Materials and Processing Die & Mould Technology, Nanomaterials and Smart Sensors Research Laboratory, Department of Materials Science and Engineering, Huazhong University of Science and Technology, No. 1037, Luoyu Road, Wuhan 430074 (China); Zeng, Dawen, E-mail: dwzeng@mail.hust.edu.cn [State Key Laboratory of Materials and Processing Die & Mould Technology, Nanomaterials and Smart Sensors Research Laboratory, Department of Materials Science and Engineering, Huazhong University of Science and Technology, No. 1037, Luoyu Road, Wuhan 430074 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Wuhan 430062 (China); Liao, Guanglan [State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, No. 1037, Luoyu Road, Wuhan 430074 (China); Xie, Changsheng [State Key Laboratory of Materials and Processing Die & Mould Technology, Nanomaterials and Smart Sensors Research Laboratory, Department of Materials Science and Engineering, Huazhong University of Science and Technology, No. 1037, Luoyu Road, Wuhan 430074 (China)

    2016-12-15

    Highlights: • Charge separation in homojunction based on the broadened band gap by quantum effect. • Absolute charge separation by the passivation effect of TiO{sub 2} nanorod. • Long-distance electron transfer behavior in photocatalysis. • Roughed surface for enhanced light harvesting by light trapping effect. - Abstract: As known, the electron transfer behavior in photocatalysis is short-distance transportation, which leads the photo-induced electrons and holes to be localized. The temporarily separated electrons and holes will recombine with each other in the localized region. In this paper, we successfully achieved electron transfer in a homojunction of branched rutile TiO{sub 2} nanorod @nanoparticle core-shell architecture by quantum confinement effect aroused by the nanoparticle, which is proved by the blue-shifting in UV–vis absorption spectrum of the homojunction. Meanwhile, an absolute charge separation is also achieved by the long-distance electron transfer along the single-crystalline rutile TiO{sub 2} nanorod as uninterrupted high-speed electron transfer channel to FTO substrates. Based on the effective charge separation, the photocatalytic decomposition of gaseous benzene by the homojunction is significantly enhanced, yielding 10 times CO{sub 2} than that of the nanorod array. This homojunction interfacial charge separation, aroused by quantum effect, through long-distance transfer along the single-crystalline nanorod gives us inspiration to achieve efficient charge separation with defect-less interfaces, which might can be utilized for real-time environmental abatement and energy generation simultaneously.

  14. Effect of nitrogen ion implantation on the structural and optical properties of indium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sethi, Riti; Aziz, Anver; Siddiqui, Azher M., E-mail: amsiddiqui@jmi.ac.in [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India); Kumar, Pravin [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi-110067 (India); Khan, Sameen Ahmed [Department of Mathematics and Sciences, College of Arts and Applied Sciences (CAAS) Dhofar University, Salalah, Sultanate of Oman (Oman)

    2016-06-10

    : We report here synthesis and subsequent nitrogen ion implantation of indium oxide (In{sub 2}O{sub 3}) thin films. The films were implanted with 25 keV N{sup +} beam for different ion doses between 3E15 to 1E16 ions/cm{sup 2}. The resulting changes in structural and optical properties were investigated using XRD, SEM-EDAX and UV-Vis Spectrometry. XRD studies reveal decrease in crystallite size from 20.06 to 12.42 nm with increase in ion dose. SEM micrographs show an increase in the grain size from 0.8 to 1.35 µm with increase in ion dose because of the agglomeration of the grains. Also, from EDAX data on pristine and N-implanted thin films the presence of indium and oxygen without any traces of impurity elements could be seen. However, at lower ion doses such as 3E15 and 5E15 ions/cm{sup 2}, no evidence of the presence of nitrogen ion was seen. However, for the ion dose of 1E16 ions/cm{sup 2}, evidence of presence of nitrogen can be seen in the EDAX data. Band gap calculations reveal a decrease in band gap from 3.54 to 3.38 eV with increasing ion dose. However, the band gap was found to again show an increase to 3.58 eV at the highest ion dose owing to quantum confinement effect.

  15. Design and characterization of Au/In4Se3/Ga2S3/C field effect transistors

    Science.gov (United States)

    Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.

    2018-03-01

    In the current work, the structural and electrical properties of the In4Se3/Ga2S3 interfaces are investigated. The X-ray analysis which concern the structural evolutions that is associated with the substrate type has shown that the hexagonal κ-In2Se3 and the selenium (rhombohedral) rich orthorhombic In4Se3 phases of InSe are grown onto glass and gold substrates, respectively, at substrate of temperature of 300 °C in a vacuum media. The coating of the κ-In2Se3 and of In4Se3 with amorphous layer of Ga2S3 is accompanied with uniform strain. The In4Se3/Ga2S3 interface is found to be of attractive quantum confinement features as it exhibited a conduction and valence band offsets of 0.20 and 1.86 eV, respectively. When the Au/In4Se3/Ga2S3 interface was contacted with carbon metallic point contact, it reveals a back to back Schottky hybrid device that behaves typically as metal-oxidesemiconductor field effect transition (MOSFET). The depletion capacitance analysis of this device revealed built in voltage values of 1.91 and 1.64 V at the Au and C sides, respectively. The designed MOSFET which is characterized in the frequency domain of 0.01-1.80 GHz is observed to exhibit, resonance-anti-resonance phenomena associated with negative capacitance effect in a wide domain of frequency that nominate it for applications in electronic circuits as parasitic capacitance minimizer, bus switching speed enhancer and low pass/high pass filter at microwave frequencies.

  16. Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

    International Nuclear Information System (INIS)

    Kao, Kuo-Hsing; De Meyer, Kristin; Verhulst, Anne S.; Van de Put, Maarten; Soree, Bart; Magnus, Wim; Vandenberghe, William G.

    2014-01-01

    Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k · p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Γ and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-hole-like valence band is strongly coupling to the conduction band at the Γ point even in the presence of strain based on the 30-band k · p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) μA/μm can be achieved along with on/off ratio > 10 6 for V DD  = 0.5 V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge

  17. Effect of substrate temperature on structural, optical and electrical properties of pulsed laser ablated nanostructured indium oxide films

    International Nuclear Information System (INIS)

    Beena, D.; Lethy, K.J.; Vinodkumar, R.; Mahadevan Pillai, V.P.; Ganesan, V.; Phase, D.M.; Sudheer, S.K.

    2009-01-01

    Nanocrystalline indium oxide (INO) films are deposited in a back ground oxygen pressure at 0.02 mbar on quartz substrates at different substrate temperatures (T s ) ranging from 300 to 573 K using pulsed laser deposition technique. The films are characterized using GIXRD, XPS, AFM and UV-visible spectroscopy to study the effect of substrate temperature on the structural and optical properties of films. The XRD patterns suggest that the films deposited at room temperature are amorphous in nature and the crystalline nature of the films increases with increase in substrate temperature. Films prepared at T s ≥ 473 K are polycrystalline in nature (cubic phase). Crystalline grain size calculation based on Debye Scherrer formula indicates that the particle size enhances with the increase in substrate temperature. Lattice constant of the films are calculated from the XRD data. XPS studies suggest that all the INO films consist of both crystalline and amorphous phases. XPS results show an increase in oxygen content with increase in substrate temperature and reveals that the films deposited at higher substrate temperatures exhibit better stoichiometry. The thickness measurements using interferometric techniques show that the film thickness decreases with increase in substrate temperature. Analysis of the optical transmittance data of the films shows a blue shift in the values of optical band gap energy for the films compared to that of the bulk material owing to the quantum confinement effect due to the presence of quantum dots in the films. Refractive index and porosity of the films are also investigated. Room temperature DC electrical measurements shows that the INO films investigated are having relatively high electrical resistivity in the range of 0.80-1.90 Ωm. Low temperature electrical conductivity measurements in the temperature range of 50-300 K for the film deposited at 300 K give a linear Arrhenius plot suggesting thermally activated conduction. Surface

  18. Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

    Energy Technology Data Exchange (ETDEWEB)

    Kao, Kuo-Hsing; De Meyer, Kristin [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, Katholieke Universiteit Leuven, 3000 Leuven (Belgium); Verhulst, Anne S. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Van de Put, Maarten; Soree, Bart; Magnus, Wim [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Department of Physics, Universiteit Antwerpen, 2000 Antwerpen (Belgium); Vandenberghe, William G. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2014-01-28

    Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k · p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Γ and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-hole-like valence band is strongly coupling to the conduction band at the Γ point even in the presence of strain based on the 30-band k · p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) μA/μm can be achieved along with on/off ratio > 10{sup 6} for V{sub DD} = 0.5 V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge.

  19. Effect of Gd{sup 3+} doping and reaction temperature on structural and optical properties of CdS nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, Gajanan, E-mail: pandeygajanan@rediffmail.com [Department of Applied Chemistry, Babasaheb Bhimrao Ambedkar University, Lucknow, 226025, (U.P.) (India); Dixit, Supriya; Shrivastava, A.K. [School of Studies in Physics, Jiwaji University, Gwalior, 474011, (M.P.) (India)

    2015-10-15

    Graphical abstract: - Highlights: • Cd{sub 1−x}Gd{sub x}S nanoparticles have been prepared in aqueous medium in presence of CTAB. • From XRD, EDX and ICP-OES study, successful doping of Gd{sup 3+} in CdS has been proved. • Gd{sup 3+} doping reduced size of NCs, while temperature increased size and altered shape. • Gd{sup 3+} doping and reaction temperature influenced the optical properties of NCs. - Abstract: CdS and Gd{sup 3+} ions doped CdS nanoparticles have been prepared at two reaction temperatures 90 and 120 °C in aqueous medium in presence of cationic surfactant cetyltrimethylammonium bromide. X-ray diffraction study revealed predominant formation of zinc blend CdS and Gd:CdS at 90 °C, while at 120 °C, phase pure wurtzite CdS and Gd:CdS were formed. From EDX spectra and ICP-OES analysis, successful doping of Gd{sup 3+} ions in CdS host has been proved. Fourier transform infrared spectroscopy results show the interaction of CTAB through headgroup at the nanoparticles surface. In the transmission electron microscopy images, it has been observed that the reaction temperature and Gd{sup 3+} doping played critical role on size and shape of nanocrystals. In UV–visible absorption as well as photoluminescence emission spectra, size and shape-dependent quantum confinement effect has been observed. On Gd{sup 3+} doping, surface states related emission peak shifted to higher wavelength, while intensity of peaks increased on increasing temperature.

  20. Spectroscopic characterization approach to study surfactants effect on ZnO 2 nanoparticles synthesis by laser ablation process

    Science.gov (United States)

    Drmosh, Q. A.; Gondal, M. A.; Yamani, Z. H.; Saleh, T. A.

    2010-05-01

    Zinc peroxide nanoparticles having grain size less than 5 nm were synthesized using pulsed laser ablation in aqueous solution in the presence of different surfactants and solid zinc target in 3% H 2O 2. The effect of surfactants on the optical and structure of ZnO 2 was studied by applying different spectroscopic techniques. Structural properties and grain size of the synthesized nanoparticles were studied using XRD method. The presence of the cubic phase of zinc peroxide in all samples was confirmed with XRD, and the grain sizes were 4.7, 3.7, 3.3 and 2.8 nm in pure H 2O 2, and H 2O 2 mixed with SDS, CTAB and OGM respectively. For optical characterization, FTIR transmittance spectra of ZnO 2 nanoparticles prepared with and without surfactants show a characteristic ZnO 2 absorption at 435-445 cm -1. FTIR spectrum revealed that the adsorbed surfactants on zinc peroxide disappeared in case of CTAB and OGM while it appears in case of SDS. This could be due to high critical micelles SDS concentration comparing with others which is attributed to the adsorption anionic nature of this surfactant. Both FTIR and UV-vis spectra show a red shift in the presence of SDS and blue shift in the presence of CTAB and OGM. The blue shift in the absorption edge indicates the quantum confinement property of nanoparticles. The zinc peroxide nanoparticles prepared in additives-free media was also characterized by Raman spectra which show the characteristic peaks at 830-840 and 420-440 cm -1.

  1. Spectroscopic characterization approach to study surfactants effect on ZnO{sub 2} nanoparticles synthesis by laser ablation process

    Energy Technology Data Exchange (ETDEWEB)

    Drmosh, Q.A. [Laser Research Group, Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Center of Excellence in Nanotechnology (CENT), King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gondal, M.A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Center of Excellence in Nanotechnology (CENT), King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Yamani, Z.H. [Laser Research Group, Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Center of Excellence in Nanotechnology (CENT), King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Saleh, T.A. [Center of Excellence in Nanotechnology (CENT), King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Chemistry Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2010-05-01

    Zinc peroxide nanoparticles having grain size less than 5 nm were synthesized using pulsed laser ablation in aqueous solution in the presence of different surfactants and solid zinc target in 3% H{sub 2}O{sub 2}. The effect of surfactants on the optical and structure of ZnO{sub 2} was studied by applying different spectroscopic techniques. Structural properties and grain size of the synthesized nanoparticles were studied using XRD method. The presence of the cubic phase of zinc peroxide in all samples was confirmed with XRD, and the grain sizes were 4.7, 3.7, 3.3 and 2.8 nm in pure H{sub 2}O{sub 2}, and H{sub 2}O{sub 2} mixed with SDS, CTAB and OGM respectively. For optical characterization, FTIR transmittance spectra of ZnO{sub 2} nanoparticles prepared with and without surfactants show a characteristic ZnO{sub 2} absorption at 435-445 cm{sup -1}. FTIR spectrum revealed that the adsorbed surfactants on zinc peroxide disappeared in case of CTAB and OGM while it appears in case of SDS. This could be due to high critical micelles SDS concentration comparing with others which is attributed to the adsorption anionic nature of this surfactant. Both FTIR and UV-vis spectra show a red shift in the presence of SDS and blue shift in the presence of CTAB and OGM. The blue shift in the absorption edge indicates the quantum confinement property of nanoparticles. The zinc peroxide nanoparticles prepared in additives-free media was also characterized by Raman spectra which show the characteristic peaks at 830-840 and 420-440 cm{sup -1}.

  2. Spectroscopic characterization approach to study surfactants effect on ZnO2 nanoparticles synthesis by laser ablation process

    International Nuclear Information System (INIS)

    Drmosh, Q.A.; Gondal, M.A.; Yamani, Z.H.; Saleh, T.A.

    2010-01-01

    Zinc peroxide nanoparticles having grain size less than 5 nm were synthesized using pulsed laser ablation in aqueous solution in the presence of different surfactants and solid zinc target in 3% H 2 O 2 . The effect of surfactants on the optical and structure of ZnO 2 was studied by applying different spectroscopic techniques. Structural properties and grain size of the synthesized nanoparticles were studied using XRD method. The presence of the cubic phase of zinc peroxide in all samples was confirmed with XRD, and the grain sizes were 4.7, 3.7, 3.3 and 2.8 nm in pure H 2 O 2 , and H 2 O 2 mixed with SDS, CTAB and OGM respectively. For optical characterization, FTIR transmittance spectra of ZnO 2 nanoparticles prepared with and without surfactants show a characteristic ZnO 2 absorption at 435-445 cm -1 . FTIR spectrum revealed that the adsorbed surfactants on zinc peroxide disappeared in case of CTAB and OGM while it appears in case of SDS. This could be due to high critical micelles SDS concentration comparing with others which is attributed to the adsorption anionic nature of this surfactant. Both FTIR and UV-vis spectra show a red shift in the presence of SDS and blue shift in the presence of CTAB and OGM. The blue shift in the absorption edge indicates the quantum confinement property of nanoparticles. The zinc peroxide nanoparticles prepared in additives-free media was also characterized by Raman spectra which show the characteristic peaks at 830-840 and 420-440 cm -1 .

  3. Effects of surface passivation on α-Si_3N_4 nanobelts: A first-principles study

    International Nuclear Information System (INIS)

    Xiong, Li; Dai, Jianhong; Song, Yan; Wen, Guangwu; Qin, Chunlin

    2016-01-01

    Highlights: • The stability and electronic properties of α-Si_3N_4 nanobelts are theoretically studied. • The surface of α-Si_3N_4 nanobelts are passivated with H, OH, F and Cl atoms. • The structural stability of nanobelts decreases in the order of OH, F, Cl, and H passivations. • The surface passivation greatly changes the electronic structures of α-Si_3N_4 nanobelts. - Abstract: The energetic stability and electronic structures of H, OH, F, or Cl passivated α-Si_3N_4 nanobelts orientating along various directions are systematically investigated via first-principles calculations. The results show that the stability of nanobelts is more sensitive to the surface passivation than growth direction. It decreases in the order of (100% OH), (50% H, 50% OH), (50% H, 50% F), (100% F), (50% H, 50% Cl), (100% Cl), (100% H), and unpassivation. H atoms prefer to bond with surface N atoms of nanobelts, while OH, F and Cl prefer to bond with Si atoms of nanobelts. In addition, the surface passivation greatly changes the electronic structures of nanobelts. The OH and F passivations result in the larger band gaps than the Cl passivation. While the coverage of OH, F or Cl increases to 100%, their band gaps decrease significantly, indicating an improvement of electrical properties, which is good agreement with the experimental findings. The 100% Cl-passivated nanobelt orientating along the [011] direction possesses the smallest band gap of 1.038 eV. The band gaps are found to be affected by a competition between quantum confinement effect and the role of the surface passivated groups or atoms at the band-gap edges.

  4. Effects of annealing atmosphere on ZnO{sup -} ions-implanted silica glass: synthesis of Zn and ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Kuiri, P K [Department of Physics, Achhruram Memorial College, P.O. Jhalda, Purulia 723202 (India); Mahapatra, D P, E-mail: kuiripk@gmail.co [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India)

    2010-10-06

    The effects of annealing atmosphere (argon or oxygen) on Zn nanoparticles (NPs), embedded in silica glass, synthesized by implanting 50 keV ZnO{sup -} ions to a fluence of 7 x 10{sup 16} cm{sup -2} have been studied. Optical absorption (OA) measurements carried out on the as-implanted samples have been found to result in a surface plasmon resonance (SPR) band centred at {approx}255 nm due to the presence of Zn NPs in the silica glass. An increase in SPR peak intensity with a corresponding reduction of its full width at half maximum have been seen in the OA spectrum taken from the as-implanted sample following annealing in Ar ambient at 700 {sup 0}C for 2 h, indicating a growth in the size of Zn NPs. However, annealing the as-implanted sample in O{sub 2} gas at 700 {sup 0}C for 2 h has been found to result in a steep absorption edge at {approx}364 nm in the OA spectrum which indicates the formation of ZnO NPs. These ZnO NPs show quantum confinement effects due to their small sizes. No observable photoluminescence (PL) emission has been seen from Zn NPs, whereas an excitonic band at {approx}368 nm and three deep-level PL emission bands at {approx}453 nm, {approx}521 nm and {approx}650 nm, respectively, have been seen from ZnO NPs. It was argued that the deep-level PLs were due to the singly ionized oxygen vacancies located at ZnO NPs' surfaces. These observations suggest that ZnO NPs were formed due to oxidation of Zn NPs via interaction with the indiffusing O{sub 2} molecules during annealing in O{sub 2} ambient, but not with the interaction of the implanted oxygen in silica glass.

  5. Acousto-optic modulation of III-V semiconductor multiple quantum wells

    International Nuclear Information System (INIS)

    Smith, D.L.; Kogan, S.M.; Ruden, P.P.; Mailhiot, C.

    1996-01-01

    We present an analysis of the effect of surface acoustic waves (SAW close-quote s) on the optical properties of III-V semiconductor multiple quantum wells (MQW close-quote s). Modulation spectra at the fundamental and second harmonic of the SAW frequency are presented. The SAW modulates the optical properties of the MQW primarily by changing optical transition energies. The SAW generates both strains, which modulate the transition energies by deformation potential effects, and electric fields, which modulate the transition energies by the quantum confined Stark effect. We find that modulation of the transition energies by strain effects is usually more important than by electric-field effects. If large static electric fields occur in the MQW, the SAW-generated electric field can mix with the static field to give optical modulation, which is comparable in magnitude to modulation from the deformation potential effect. If there are no large static electric fields, modulation by the SAW-generated fields is negligible. A large static electric field distributes oscillator strength among the various optical transitions so that no single transition is as strong as the primary allowed transitions without a static electric field. To achieve the maximum modulation for fixed SAW parameters, it is best to modulate a strong optical transition. Thus optimum modulation occurs when there are no large static electric fields present and that modulation is primarily from deformation potential effects. We specifically consider Ga x In 1-x As/Ga x Al 1-x As MQW close-quote s grown on (100) and (111) oriented substrates, but our general conclusions apply to other type I MQW close-quote s fabricated from III-V semiconductors. copyright 1996 The American Physical Society

  6. Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Feng; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn; Liu, Jianping; Zhang, Shuming [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Zhou, Kun; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Institute of Semiconductors (CAS), Beijing 100083 (China); Liu, Zongshun [Institute of Semiconductors (CAS), Beijing 100083 (China)

    2015-07-21

    Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.

  7. Electronic effects in emission of core/shell CdSe/ZnS quantum dots conjugated to anti-Interleukin 10 antibodies

    Energy Technology Data Exchange (ETDEWEB)

    Quintos Vazquez, A.L. [ESIME—Instituto Politécnico Nacional, México D. F. 07738, México (Mexico); Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM–Instituto Politécnico Nacional, México D. F. 07738, México (Mexico); Casas Espinola, J.L. [ESFM–Instituto Politécnico Nacional, México D. F. 07738, México (Mexico); Jaramillo Gómez, J.A.; Douda, J. [UPIITA–Instituto Politécnico Nacional, México D. F. 07320, México (Mexico)

    2013-11-15

    The paper presents a comparative study of the photoluminescence (PL) and Raman scattering spectra of the core–shell CdSe/ZnS quantum dots (QDs) in nonconjugated states and after the conjugation to anti-Interleukin 10 antibodies (anti-IL10). All optical measurements are performed on the dried droplets of the original solution of nonconjugated and bioconjugated QDs located on the Si substrate. CdSe/ZnS QDs with emission at 605 and 655 nm have been used. PL spectra of nonconjugated QDs are characterized by one Gaussian shape PL band related to the exciton emission in the CdSe core. PL spectra of bioconjugated QDs have changed essentially: the core PL band shifts into the high energy spectral range (“blue” sift) and becomes asymmetric. Additionally two new PL bands appear. A set of physical reasons has been proposed for the “blue” shift explanation for the core PL band in bioconjugated QDs. Then Raman scattering spectra have been studied with the aim to analyze the impact of elastic strains or the oxidation process at the QD bioconjugation. The variation of PL spectra versus excitation light intensities has been studied to analyze the exciton emission via excited states in QDs. Finally the PL spectrum transformation for the core emission in bioconjugated QDs has been attributed to the electronic quantum confined effects stimulated by the electric charges of bioconjugated antibodies. -- Highlights: • The conjugation of CdSe/ZnS QDs to anti-Interleukin 10 antibodies has been studied. • PL shift to high energy is detected in bioconjugated CdSe/ZnS QDs. • The PL energy shift in bioconjugated QDs is stimulated by antibody electric charges. • The reasons of PL energy shift in bioconjugated QDs have been discussed.

  8. Quantum well effect in bulk PbI(2) crystals revealed by the anisotropy of photoluminescence and Raman spectra.

    Science.gov (United States)

    Baltog, I; Baibarac, M; Lefrant, S

    2009-01-14

    On subjecting a bulk 2H-PbI(2) crystal to vacuum annealing at 500 K followed by a sudden cooling at liquid nitrogen temperature stacking faults are generated that separate distinct layers of nanometric thickness in which different numbers of I-Pb-I atomic layers are bundled together. Such structures, containing two, three, four, five etc I-Pb-I atomic layers, behave as quantum wells of different widths. The signature of such a transformation is given by a shift towards higher energies of the fundamental absorption edge, which is experimentally revealed by specific anisotropies in the photoluminescence and Raman spectra. The quantum confining effect is made visible by specific variations of a wide extra-excitonic band (G) at 2.06 eV that originates in the radiative recombination of carriers (electrons and holes), trapped on the surface defects. The excitation spectrum of the G band, with p polarized exciting light, reveals a fine structure comprised of narrow bands at 2.75, 2.64, 2.59 and 2.56 eV, which are associated with the PbI(2) quantum wells formed from two, three, four and five I-Pb-I atomic layers of 0.7 nm thickness. Regardless of the polarization state of the laser exciting light of 514.5 nm (2.41 eV), which is close to the band gap energy of PbI(2) (2.52 eV), the Raman scattering on bulk as-grown PbI(2) crystals has the character of a resonant process. For p polarized exciting light, the Raman scattering process on vacuum annealed PbI(2) becomes non-resonant. This originates from the quantum well structures generated inside the crystal, whose band gap energies are higher than the energy of the exciting light.

  9. The WTO and the Poorest Countries; The Stark Reality

    OpenAIRE

    Aaditya Mattoo; Arvind Subramanian

    2004-01-01

    Small and poor countries pose a challenge for the World Trade Organization (WTO). These countries have acquired a significant say in WTO decision-making. However, they have limited ability to engage in the reciprocity game that is at the heart of the WTO, and have limited interests in the broader liberalization agenda because of their preferential access to industrial country markets. Accommodating the interests of the small and poor countries is desirable in itself, but would also facilitate...

  10. Social scripts and stark realities: Kenyan adolescents' abortion discourse.

    Science.gov (United States)

    Mitchell, Ellen M H; Halpern, Carolyn Tucker; Kamathi, Eva Muthuuri; Owino, Shirley

    2006-01-01

    This study explores students' narratives and discourses about adolescent pregnancy and abortion elicited via internet-based open-ended questions posed in response to a cartoon vignette. We report on content analysis of recommendations and strategies for how to manage the unplanned pregnancy of a fictional young couple and in their own personal lives. The responses of 614 young people were analysed. Strategies vary widely. They include giving birth, adoption, running away, abortion, denial, and postponement until discovery. Young people were also queried about unplanned pregnancy resolution among their peers. Discourse analysis reveals competing social scripts on abortion. Florid condemnation of abortion acts in the hypothetical cases contrasts with more frank and sober description of peers' real life abortion behaviour. Students' language is compared with that found in official curricula. The rhetorical devices, moralizing social scripts and dubious health claims about abortion in students' online narratives mirror the tenor and content of their academic curricula as well as Kenyan media presentation of the issue. The need for factual information, dispassionate dialogue and improved contraceptive access is considerable.

  11. Systems for uninterrupted power supply; USV - ein starkes Stueck Sicherheit

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, D.; Soelter, W. [AEG SVS GmbH, Warstein-Belecke (Germany)

    1999-09-01

    The millennium bug is only one of the many potential hazards in information technology. Systems for uninterrupted power supply offer a solution. [German] Alle Welt spricht vom Jahr-2000-Problem (Y2K). Die Meinungen dazu reichen von Horror-Szenarien bis hin zum Ignorieren dieses Problems. Dabei steht fest: Das Jahr-2000-Problem ist nur eines unter vielen Gefahrenpotentialen fuer die Informationstechnik. Dabei lassen sich alle Stoerfaktoren, die aus der Energieversorgung resultieren mit einer USV beseitigen. USV sichern Geschaeftsablaeufe und Fertigungsprozesse. (orig.)

  12. Stark Broadening Parameters for Neutral Oxygen Spectral Lines

    Indian Academy of Sciences (India)

    fundamental state; its fundamental configuration is 2s22p4 and is subdivided into 3 even terms: 3P ... μ the reduced mass of the system atom-perturber). Recently ... where We(VALD) are the widths taken from the VALD database for T = 10000.

  13. Flora White (1860-1948): New Woman, Stark Choice

    Science.gov (United States)

    Morice, Linda C.

    2009-01-01

    This article examines the life of education reformer Flora White, who both represented and deviated from the stereotypical new woman portrayed in popular literature of the late nineteenth and early twentieth century. White's decision to reject marriage and children in favor of a career resulted in greater financial insecurity and an unmet desire…

  14. DIGITAL FLOOD INSURANCE RATE MAP DATABASE, STARK COUNTY, OHIO

    Data.gov (United States)

    Federal Emergency Management Agency, Department of Homeland Security — Terrain data, as defined in FEMA Guidelines and Specifications, Appendix M: Data Capture Standards, describe the digital topographic data that were used to create...

  15. DIGITAL FLOOD INSURANCE RATE MAP DATABASE, STARK COUNTY, OHIO

    Data.gov (United States)

    Federal Emergency Management Agency, Department of Homeland Security — The Digital Flood Insurance Rate Map (DFIRM) Database depicts flood risk information and supporting data used to develop the risk data. The primary risk...

  16. New nonlinear optical effect: self-reflection phenomenon due to exciton-biexciton-light interaction in semiconductors

    Science.gov (United States)

    Khadzhi, P. I.; Lyakhomskaya, K. D.; Nadkin, L. Y.; Markov, D. A.

    2002-05-01

    The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.

  17. Determination of the electronic energy levels of colloidal nanocrystals using field-effect transistors and Ab-initio calculations.

    Science.gov (United States)

    Bisri, Satria Zulkarnaen; Degoli, Elena; Spallanzani, Nicola; Krishnan, Gopi; Kooi, Bart Jan; Ghica, Corneliu; Yarema, Maksym; Heiss, Wolfgang; Pulci, Olivia; Ossicini, Stefano; Loi, Maria Antonietta

    2014-08-27

    Colloidal nanocrystals electronic energy levels are determined by strong size-dependent quantum confinement. Understanding the configuration of the energy levels of nanocrystal superlattices is vital in order to use them in heterostructures with other materials. A powerful method is reported to determine the energy levels of PbS nanocrystal assemblies by combining the utilization of electric-double-layer-gated transistors and advanced ab-initio theory. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Effects impeding the observation of weak neutral interaction between muons and nuclei in light mesic atoms

    International Nuclear Information System (INIS)

    Grechukhin, D.P.; Soldatov, A.A.

    1977-01-01

    The intensity of the satellite lines of the 2s1/2→1s1/2 radiative transition in a mesic atom due to configurational interaction between the meson and shell electrons of the mesic atom is estimated. The intensity of these satellite lines is shown to be about six orders of magnitude greater than the intensity of the emission in the 2s1/2→1s1/2 meson transition. Configurational interaction between the meson and conductivity band electrons in metals precludes the usage of a metal target for stopping the mesons in the experiment. Estimates show that for mesic atoms produced in a gas the Stark effect of the electric dipole field induced in collisions between atoms of the medium and a mesic atom (Z>=2) stripped of electrons significantly restricts the density of the medium from above such that the density is 14 at/cm 3 ; in the case of the Stark effect of the intra-atomic field and collisions between a μH atom and atoms of the medium the corresponding value is 11 at/cm 3

  19. The effect of oxide shell thickness on the structural, electronic, and optical properties of Si-SiO{sub 2} core-shell nano-crystals: A (time dependent)density functional theory study

    Energy Technology Data Exchange (ETDEWEB)

    Nazemi, Sanaz, E-mail: s.nazemi@ut.ac.ir, E-mail: pourfath@ut.ac.ir; Soleimani, Ebrahim Asl [School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515 (Iran, Islamic Republic of); Pourfath, Mahdi, E-mail: s.nazemi@ut.ac.ir, E-mail: pourfath@ut.ac.ir [School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515 (Iran, Islamic Republic of); Institute for Microelectronics, Technische Universität Wien, Wien A-1040 (Austria); Kosina, Hans [Institute for Microelectronics, Technische Universität Wien, Wien A-1040 (Austria)

    2016-04-14

    Due to their tunable properties, silicon nano-crystals (NC) are currently being investigated. Quantum confinement can generally be employed for size-dependent band-gap tuning at dimensions smaller than the Bohr radius (∼5 nm for silicon). At the nano-meter scale, however, increased surface-to-volume ratio makes the surface effects dominant. Specifically, in Si-SiO{sub 2} core-shell semiconductor NCs the interfacial transition layer causes peculiar electronic and optical properties, because of the co-existence of intermediate oxidation states of silicon (Si{sup n+}, n = 0–4). Due to the presence of the many factors involved, a comprehensive understanding of the optical properties of these NCs has not yet been achieved. In this work, Si-SiO{sub 2} NCs with a diameter of 1.1 nm and covered by amorphous oxide shells with thicknesses between 2.5 and 4.75 Å are comprehensively studied, employing density functional theory calculations. It is shown that with increased oxide shell thickness, the low-energy part of the optical transition spectrum of the NC is red shifted and attenuated. Moreover, the absorption coefficient is increased in the high-energy part of the spectrum which corresponds to SiO{sub 2} transitions. Structural examinations indicate a larger compressive stress on the central silicon cluster with a thicker oxide shell. Examination of the local density of states reveals the migration of frontier molecular orbitals from the oxide shell into the silicon core with the increase of silica shell thickness. The optical and electrical properties are explained through the analysis of the density of states and the spatial distribution of silicon sub-oxide species.

  20. High-modulation-efficiency, integrated waveguide modulator-laser diode at 448 nm

    KAUST Repository

    Shen, Chao; Ng, Tien Khee; Leonard, John T.; Pourhashemi, Arash; Oubei, Hassan M.; Alias, Mohd Sharizal; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Alyamani, Ahmed Y.; Eldesouki, Munir M.; Ooi, Boon S.

    2016-01-01

    To date, solid-state lighting (SSL), visible light communication (VLC) and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator-laser diode (IWM-LD) at 448 nm, offering the advantages of small-footprint, high-speed, and low power-consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, was resulted from the external-field-induced quantum-confined-Stark-effect (QCSE). A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM-LD based on semipolar (20¯2 ¯1) QWs was able to operate in a manner similar to other III-V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a -3dB bandwidth of ~1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on-off keying (OOK) modulation. Our experimental investigation highlighted the advantage of implementing the IWM-LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL-VLC dual-functionalities.