THz quantum-confined Stark effect in semiconductor quantum dots
DEFF Research Database (Denmark)
Turchinovich, Dmitry; Monozon, Boris S.; Livshits, Daniil A.;
2012-01-01
We demonstrate an instantaneous all-optical manipulation of optical absorption at the ground state of InGaAs/GaAs quantum dots (QDs) via a quantum-confined Stark effect (QCSE) induced by the electric field of incident THz pulses with peak electric fields reaching 200 kV/cm in the free space...
Electron-hole confinement symmetry in silicon quantum dots
Müller, F.; Mueller, Filipp; Konstantaras, Georgios; Spruijtenburg, P.C.; van der Wiel, Wilfred Gerard; Zwanenburg, Floris Arnoud
2015-01-01
We report electrical transport measurements on a gate-defined ambipolar quantum dot in intrinsic silicon. The ambipolarity allows its operation as either an electron or a hole quantum dot of which we change the dot occupancy by 20 charge carriers in each regime. Electron−hole confinement symmetry is
Hydrogenic Donor in a Spherical Quantum Dot with Different Confinements
Institute of Scientific and Technical Information of China (English)
A. John Peter; K. Navaneethakrishnan
2009-01-01
Binding energies of a hydrogenic donor in a spherical GaAs quantum dot surrounded by Ga1-xAlxAs matrix are calculated. The results are presented for realistic barrier heights corresponding to different values of x (x < 0.4). The calculations are performed under two different conditions: (i) a spherical dot with square well confinement and (ii) a dot with parabolic potential well confinement. The results show that (i) the donor ionization energies are always higher under parabolic confinement as compared to a dot of the same radius under square well confinement and (ii) the oscillator strengths coupling ground state with excited states are two orders larger under parabolic confinement. Our results are in agreement with the results of other researchers.
Imaging electrostatically confined Dirac fermions in graphene quantum dots
Lee, Juwon; Wong, Dillon; Velasco, Jairo, Jr.; Rodriguez-Nieva, Joaquin F.; Kahn, Salman; Tsai, Hsin-Zon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Levitov, Leonid S.; Crommie, Michael F.
2016-11-01
Electrostatic confinement of charge carriers in graphene is governed by Klein tunnelling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at p-n junction boundaries. Reflection and transmission at these boundaries affect the quantum interference of electronic waves, enabling the formation of novel quasi-bound states. Here we report the use of scanning tunnelling microscopy to map the electronic structure of Dirac fermions confined in quantum dots defined by circular graphene p-n junctions. The quantum dots were fabricated using a technique involving local manipulation of defect charge within the insulating substrate beneath a graphene monolayer. Inside such graphene quantum dots we observe resonances due to quasi-bound states and directly visualize the quantum interference patterns arising from these states. Outside the quantum dots Dirac fermions exhibit Friedel oscillation-like behaviour. Bolstered by a theoretical model describing relativistic particles in a harmonic oscillator potential, our findings yield insights into the spatial behaviour of electrostatically confined Dirac fermions.
Si quantum dots in silicon nitride: Quantum confinement and defects
Goncharova, L. V.; Nguyen, P. H.; Karner, V. L.; D'Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J.
2015-12-01
Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiNx:H) matrix was examined over a broad range of stoichiometries from Si3N2.08 to Si3N4.14, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiNx films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH4 and NH3 gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si3Nx compositions. There is a red-shift of the measured peaks from ˜2.3 eV to ˜1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (˜Si3N3.15) in which the maximum of light emission is observed.
Si quantum dots in silicon nitride: Quantum confinement and defects
Energy Technology Data Exchange (ETDEWEB)
Goncharova, L. V., E-mail: lgonchar@uwo.ca; Karner, V. L.; D' Ortenzio, R.; Chaudhary, S.; Mokry, C. R.; Simpson, P. J. [Department of Physics and Astronomy, The University of Western Ontario, London, Ontario N6A 3K7 (Canada); Nguyen, P. H. [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1 (Canada)
2015-12-14
Luminescence of amorphous Si quantum dots (Si QDs) in a hydrogenated silicon nitride (SiN{sub x}:H) matrix was examined over a broad range of stoichiometries from Si{sub 3}N{sub 2.08} to Si{sub 3}N{sub 4.14}, to optimize light emission. Plasma-enhanced chemical vapor deposition was used to deposit hydrogenated SiN{sub x} films with excess Si on Si (001) substrates, with stoichiometry controlled by variation of the gas flow rates of SiH{sub 4} and NH{sub 3} gases. The compositional and optical properties were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection, spectroscopic ellipsometry, photoluminescence (PL), time-resolved PL, and energy-filtered transmission electron microscopy. Ultraviolet-laser-excited PL spectra show multiple emission bands from 400 nm (3.1 eV) to 850 nm (1.45 eV) for different Si{sub 3}N{sub x} compositions. There is a red-shift of the measured peaks from ∼2.3 eV to ∼1.45 eV as Si content increases, which provides evidence for quantum confinement. Higher N content samples show additional peaks in their PL spectra at higher energies, which we attribute to defects. We observed three different ranges of composition where Tauc band gaps, PL, and PL lifetimes change systematically. There is an interesting interplay of defect luminescence and, possibly, small Si QD luminescence observed in the intermediate range of compositions (∼Si{sub 3}N{sub 3.15}) in which the maximum of light emission is observed.
Investigation of confinement effects in ZnO quantum dots
Energy Technology Data Exchange (ETDEWEB)
Haranath, D; Sahai, Sonal; Joshi, Amish G; Gupta, Bipin K; Shanker, V, E-mail: haranath@nplindia.or [National Physical Laboratory, Council of Scientific and Industrial Research, Dr K S Krishnan Road, New Delhi-110 012 (India)
2009-10-21
We report a simple method for the synthesis of Na{sup +} doped and stable zinc oxide quantum dots, using the quantum confinement atom method. An intense broad green photoluminescence (PL) was observed with a maximum located at {approx}535 nm when excited by UV radiation of 332 nm. The PL peak intensity is found to be highly dependent on the size of the quantum dots (QDs). Electron microscopy observation revealed that the radius of the QD was {approx}1 nm, which clearly indicated that the QDs are in the strong quantum confinement region (exciton Bohr radius, r{sub B}, for bulk ZnO is 1.8 nm). Phase purity of ZnO and the presence of Na{sup +} was confirmed by x-ray diffraction (XRD) and atomic absorption spectroscopy (AAS), respectively. The results are well incremented by x-ray photoelectron spectroscopy (XPS) studies. Intentional ageing of QDs for several days under controlled experimental conditions such as temperature, relative humidity and pH etc, facilitated the formation of various nanostructures with a slight red shift in the PL peak position. Time resolved emission spectroscopy measurements indicated that PL decay time changes from 35 ns for QDs to 1660 {mu}s for nanocrystals. The observed high-intensity and stable green PL emissions have been analyzed and thoroughly discussed.
Theoretical study of quantum confined Stark shift in InAs/GaAs quantum dots
Institute of Scientific and Technical Information of China (English)
Guo Ru-Hai; Shi Hong-Yan; Sun Xiu-Dong
2004-01-01
The quantum confined Stark effect (QCSE) of the self-assembled InAs/GaAs quantum dots has been investigated theoretically. The ground-state transition energies for quantum dots in the shape of a cube, pyramid or "truncated pyramid" are calculated and analysed. We use a method based on the Green function technique for calculating the strain in quantum dots and an efficient plane-wave envelope-function technique to determine the ground-state electronic structure of them with different shapes. The symmetry of quantum dots is broken by the effect of strain. So the properties of carriers show different behaviours from the traditional quantum device. Based on these results, we also calculate permanent built-in dipole moments and compare them with recent experimental data. Our results demonstrate that the measured Stark effect in self-assembled InAs/GaAs quantum dot structures can be explained by including linear grading.
Diamagnetic susceptibility of a confined donor in inhomogeneous quantum dots
Rahmani, K.; Zorkani, I.; Jorio, A.
2011-03-01
The binding energy and diamagnetic susceptibility χdia are estimated for a shallow donor confined to move in GaAs-GaAlAs inhomogeneous quantum dots. The calculation was performed within the effective mass approximation and using the variational method. The results show that the binding energy and the diamagnetic susceptibility χdia depend strongly on the core radius and the shell radius. We have demonstrated that there is a critical value of the ratio of the inner radius to the outer radius which may be important for nanofabrication techniques. The binding energy Eb shows a minimum for a critical value of this ratio depending on the value of the outer radius and shows a maximum when the donor is placed at the center of the spherical layer. The diamagnetic susceptibility is more sensitive to variations of the radius for a large spherical layer. The binding energy and diamagnetic susceptibility depend strongly on the donor position.
Quantum-Confinement Effects on Binding Energies and Optical Properties of Excitons in Quantum Dots
Institute of Scientific and Technical Information of China (English)
潘晖
2004-01-01
Quantum-confinement effects on the binding energy and the linear optical susceptibility of excitons in quantum dots are studied. It is found that the binding energy and the linear optical susceptibility are sensitive to the barrier height and the dot size. For an infinite barrier, the binding energy of excitons decreases monotonically with the increasing dot radius, and the absorption intensity has almost the same amplitude with the increasing photon energy. For a finite barrier, the binding energy has a maximum value with the increasing dot radius, and the absorption intensity damps rapidly with the increasing photon energy. The effective mass ratio is also found to have an influence on the binding energy. The results could be confirmed by future experiments on excitons in quantum dots.
Two- versus three-dimensional quantum confinement in indium phosphide wires and dots.
Yu, Heng; Li, Jingbo; Loomis, Richard A; Wang, Lin-Wang; Buhro, William E
2003-08-01
The size dependence of the bandgap is the most identifiable aspect of quantum confinement in semiconductors; the bandgap increases as the nanostructure size decreases. The bandgaps in one-dimensional (1D)-confined wells, 2D-confined wires, and 3D-confined dots should evolve differently with size as a result of the differing dimensionality of confinement. However, no systematic experimental comparisons of analogous 1D, 2D or 3D confinement systems have been made. Here we report growth of indium phosphide (InP) quantum wires having diameters in the strong-confinement regime, and a comparison of their bandgaps with those previously reported for InP quantum dots. We provide theoretical evidence to establish that the quantum confinement observed in the InP wires is weakened to the expected extent, relative to that in InP dots, by the loss of one confinement dimension. Quantum wires sometimes behave as strings of quantum dots, and we propose an analysis to generally distinguish quantum-wire from quantum-dot behaviour.
Diamagnetic susceptibility of a confined donor in inhomogeneous quantum dots
Energy Technology Data Exchange (ETDEWEB)
Rahmani, K; Zorkani, I; Jorio, A, E-mail: izorkani@hotmail.com [LPS, Faculte des sciences, Dhar Mehraz Fes, Fes, BP 1796 (Morocco)
2011-03-15
The binding energy and diamagnetic susceptibility {chi}{sub dia} are estimated for a shallow donor confined to move in GaAs-GaAlAs inhomogeneous quantum dots. The calculation was performed within the effective mass approximation and using the variational method. The results show that the binding energy and the diamagnetic susceptibility {chi}{sub dia} depend strongly on the core radius and the shell radius. We have demonstrated that there is a critical value of the ratio of the inner radius to the outer radius which may be important for nanofabrication techniques. The binding energy E{sub b} shows a minimum for a critical value of this ratio depending on the value of the outer radius and shows a maximum when the donor is placed at the center of the spherical layer. The diamagnetic susceptibility is more sensitive to variations of the radius for a large spherical layer. The binding energy and diamagnetic susceptibility depend strongly on the donor position.
Cao, Hujia; Ma, Junliang; Huang, Lin; Qin, Haiyan; Meng, Renyang; Li, Yang; Peng, Xiaogang
2016-12-07
Single-molecular spectroscopy reveals that photoluminescence (PL) of a single quantum dot blinks, randomly switching between bright and dim/dark states under constant photoexcitation, and quantum dots photobleach readily. These facts cast great doubts on potential applications of these promising emitters. After ∼20 years of efforts, synthesis of nonblinking quantum dots is still challenging, with nonblinking quantum dots only available in red-emitting window. Here we report synthesis of nonblinking quantum dots covering most part of the visible window using a new synthetic strategy, i.e., confining the excited-state wave functions of the core/shell quantum dots within the core quantum dot and its inner shells (≤ ∼5 monolayers). For the red-emitting ones, the new synthetic strategy yields nonblinking quantum dots with small sizes (∼8 nm in diameter) and improved nonblinking properties. These new nonblinking quantum dots are found to be antibleaching. Results further imply that the PL blinking and photobleaching of quantum dots are likely related to each other.
Mathan Kumar, K.; John Peter, A.; Lee, C. W.
2011-12-01
Electronic energies of an exciton confined in a strained Zn1- x Cd x Se/ZnSe quantum dot have been computed as a function of dot radius with various Cd content. Calculations have been performed using Bessel function as an orthonormal basis for different confinement potentials of barrier height considering the internal electric field induced by the spontaneous and piezoelectric polarizations. The optical absorption coefficients and the refractive index changes between the ground state ( L = 0) and the first excited state ( L = 1) are investigated. It is found that the optical properties in the strained ZnCdSe/ZnSe quantum dot are strongly affected by the confinement potentials and the dot radii. The intensity of the total absorption spectra increases for the transition between higher levels. The obtained optical nonlinearity brings out the fact that it should be considered in calculating the optical properties in low dimensional semiconductors especially in quantum dots.
Directory of Open Access Journals (Sweden)
Manvir S. Kushwaha
2014-12-01
Full Text Available Semiconducting quantum dots – more fancifully dubbed artificial atoms – are quasi-zero dimensional, tiny, man-made systems with charge carriers completely confined in all three dimensions. The scientific quest behind the synthesis of quantum dots is to create and control future electronic and optical nanostructures engineered through tailoring size, shape, and composition. The complete confinement – or the lack of any degree of freedom for the electrons (and/or holes – in quantum dots limits the exploration of spatially localized elementary excitations such as plasmons to direct rather than reciprocal space. Here we embark on a thorough investigation of the magneto-optical absorption in semiconducting spherical quantum dots characterized by a confining harmonic potential and an applied magnetic field in the symmetric gauge. This is done within the framework of Bohm-Pines’ random-phase approximation that enables us to derive and discuss the full Dyson equation that takes proper account of the Coulomb interactions. As an application of our theoretical strategy, we compute various single-particle and many-particle phenomena such as the Fock-Darwin spectrum; Fermi energy; magneto-optical transitions; probability distribution; and the magneto-optical absorption in the quantum dots. It is observed that the role of an applied magnetic field on the absorption spectrum is comparable to that of a confining potential. Increasing (decreasing the strength of the magnetic field or the confining potential is found to be analogous to shrinking (expanding the size of the quantum dots: resulting into a blue (red shift in the absorption spectrum. The Fermi energy diminishes with both increasing magnetic-field and dot-size; and exhibits saw-tooth-like oscillations at large values of field or dot-size. Unlike laterally confined quantum dots, both (upper and lower magneto-optical transitions survive even in the extreme instances. However, the intra
Energy Technology Data Exchange (ETDEWEB)
Kushwaha, Manvir S. [Department of Physics and Astronomy, Rice University, P.O. Box 1892, Houston, TX 77251 (United States)
2014-12-15
Semiconducting quantum dots – more fancifully dubbed artificial atoms – are quasi-zero dimensional, tiny, man-made systems with charge carriers completely confined in all three dimensions. The scientific quest behind the synthesis of quantum dots is to create and control future electronic and optical nanostructures engineered through tailoring size, shape, and composition. The complete confinement – or the lack of any degree of freedom for the electrons (and/or holes) – in quantum dots limits the exploration of spatially localized elementary excitations such as plasmons to direct rather than reciprocal space. Here we embark on a thorough investigation of the magneto-optical absorption in semiconducting spherical quantum dots characterized by a confining harmonic potential and an applied magnetic field in the symmetric gauge. This is done within the framework of Bohm-Pines’ random-phase approximation that enables us to derive and discuss the full Dyson equation that takes proper account of the Coulomb interactions. As an application of our theoretical strategy, we compute various single-particle and many-particle phenomena such as the Fock-Darwin spectrum; Fermi energy; magneto-optical transitions; probability distribution; and the magneto-optical absorption in the quantum dots. It is observed that the role of an applied magnetic field on the absorption spectrum is comparable to that of a confining potential. Increasing (decreasing) the strength of the magnetic field or the confining potential is found to be analogous to shrinking (expanding) the size of the quantum dots: resulting into a blue (red) shift in the absorption spectrum. The Fermi energy diminishes with both increasing magnetic-field and dot-size; and exhibits saw-tooth-like oscillations at large values of field or dot-size. Unlike laterally confined quantum dots, both (upper and lower) magneto-optical transitions survive even in the extreme instances. However, the intra-Landau level
Energy Technology Data Exchange (ETDEWEB)
Ramírez-Porras, A., E-mail: aramirez@fisica.ucr.ac.cr [Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA), Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); García, O. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Vargas, C. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Corrales, A. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Solís, J.D. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica)
2015-08-30
Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models.
Quantum-Confined Stark Effects in a Single GaN Quantum Dot
Institute of Scientific and Technical Information of China (English)
LIU Yong-Hui; WANG Xue-Feng; LI Shu-Shen
2008-01-01
Using analytical expressions for the polarization field in GaN quantum dot, and an approximation by separating the potential into a radial and an axial, we investigate theoretically the quantum-confined Stark effects. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. The results show that the electron and hole energy levels and the optical transition energies can cause redshifts for the lateral electric field and blueshifts for the vertical field. The rotational direction of electric field can also change the energy shift.
Quantum-Confined Stark Effect in Ensemble of Colloidal Semiconductor Quantum Dots
Institute of Scientific and Technical Information of China (English)
WANG Zhi-Bing; ZHANG Hui-Chao; ZHANG Jia-Yu; Huaipeng Su; Y.Andrew Wang
2010-01-01
@@ The presence of a strong,changing,randomly-oriented,local electric field,which is induced by the photo-ionization that occurs universally in colloidal semiconductor quantum dots(QDs),makes it difficult to observe the quantumconfined Stark effect in ensemble of colloidal QDs.We propose a way to inhibit such a random electric field,and a clear quantum-confined Stark shift is observed directly in close-packed colloidal QDs.Besides the applications in optical switches and modulators,our experimental results indicate how the oscillator strengths of the optical transitions are changed under external electric fields.
Engineering the hole confinement for CdTe-based quantum dot molecules
Kłopotowski, Ł.; Wojnar, P.; Kret, S.; Parlińska-Wojtan, M.; Fronc, K.; Wojtowicz, T.; Karczewski, G.
2015-06-01
We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmission electron microscopy studies and correlate the results with ensemble quantum dot photoluminescence. Furthermore, we embed the double quantum dots into diode structures and study photoluminescence as a function of bias voltage. We show that in properly engineered structures, it is possible to achieve a resonance of the hole states by tuning the energy levels with electric field. At the resonance, we observe signatures of a formation of a molecular state, hybridized over the two dots.
Engineering the hole confinement for CdTe-based quantum dot molecules
Energy Technology Data Exchange (ETDEWEB)
Kłopotowski, Ł., E-mail: lukasz.klopotowski@ifpan.edu.pl; Wojnar, P.; Kret, S.; Fronc, K.; Wojtowicz, T.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Parlińska-Wojtan, M. [Facility for Electron Microscopy and Sample Preparation, Center for Microelectronics and Nanotechnology, Faculty of Mathematics and Natural Sciences, University of Rzeszów, ul. Pigonia 1, 35-959 Rzeszów (Poland)
2015-06-14
We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmission electron microscopy studies and correlate the results with ensemble quantum dot photoluminescence. Furthermore, we embed the double quantum dots into diode structures and study photoluminescence as a function of bias voltage. We show that in properly engineered structures, it is possible to achieve a resonance of the hole states by tuning the energy levels with electric field. At the resonance, we observe signatures of a formation of a molecular state, hybridized over the two dots.
Ground State of a Two-Electron Quantum Dot with a Gaussian Confining Potential
Institute of Scientific and Technical Information of China (English)
XIE Wen-Fang
2006-01-01
We investigate the ground-state properties of a two-dimensional two-electron quantum dot with a Gaussian confining potential under the influence of perpendicular homogeneous magnetic field. Calculations are carried out by using the method of numerical diagonalization of Hamiltonian matrix within the effective-mass approximation. A ground-state behaviour (singlet→triplet state transitions) as a function of the strength of a magnetic field has been found. It is found that the dot radius R of the Gaussian potential is important for the ground-state transition and the feature of ground-state for the Gaussian potential quantum dot (QD), and the parabolic potential QDs are similar when R is larger. The larger the quantum dot radius, the smaller the magnetic field for the singlet-triplet transition of the ground-state of two interacting electrons in the Gaussian quantum dot.
The nonlinear optical rectification of a confined exciton in a quantum dot
Energy Technology Data Exchange (ETDEWEB)
Xie Wenfang, E-mail: xiewf@gzhu.edu.c [School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006 (China)
2011-05-15
An exciton in a disc-like quantum dot (QD) with the parabolic confinement, under applied electric field, is studied within the framework of the effective-mass approximation. The nonlinear optical rectification between the ground and the first-excited states has been examined through the computed energies and wave functions in details for the excitons. The results show that the optical rectification susceptibility obtained in a disc-like QD reach the magnitude of 10{sup -2} m/V, which is 3-4 orders of magnitude higher than in one-dimensional QDs. It is found that the second-order nonlinear optical properties of exciton states in a QD are strongly affected by the confinement strength and the electric field. - Research highlights: {yields} The magnitude of the nonlinear optical rectification of the excitons confined in a disc-like quantum dot may reach 10{sup -2} m/V. It is much higher than that of the other low-dimensional semiconductors, e.g., quantum wells, and one-dimensional semiparabolic quantum dots. {yields} The nonlinear optical rectification of the excitons confined in a disc-like quantum dot is strongly dependent on the confinement frequency. In order to obtain the larger optical rectification coefficients in quantum dots, we can change the confinement frequency. {yields} The calculated results also reveal that an applied electric field has a great influence on the nonlinear optical rectification susceptibility. In order to obtain the larger optical rectification coefficients in quantum dots we can induce the electric field.
Effect of confinement potential geometry on entanglement in quantum dot-based nanostructures
Abdullah, S; D'Amico, I
2009-01-01
We calculate the spatial entanglement between two electrons trapped in a nanostructure for a broad class of confinement potentials, including single and double quantum dots, and core-shell quantum dot structures. By using a parametrized confinement potential, we are able to switch from one structure to the others with continuity and to analyze how the entanglement is influenced by the changes in the confinement geometry. We calculate the many-body wave function by `exact' diagonalization of the time independent Schr\\"odinger equation. We discuss the relationship between the entanglement and specific cuts of the wave function, and show that the wave function at a single highly symmetric point could be a good indicator for the entanglement content of the system. We analyze the counterintuitive relationship between spatial entanglement and Coulomb interaction, which connects maxima (minima) of the first to minima (maxima) of the latter. We introduce a potential quantum phase transition which relates quantum stat...
Energy Technology Data Exchange (ETDEWEB)
Ray, Mallar [School of Materials Science and Engineering, Bengal Engineering and Science University, Shibpur, Howrah: 711103, West Bengal (India); Hossain, Syed Minhaz [Department of Physics, Bengal Engineering and Science University, Shibpur, Howrah: 711103, West Bengal (India); Klie, Robert F [Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States); Banerjee, Koushik; Ghosh, Siddhartha, E-mail: mray@matsc.becs.ac.in [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, 60607 (United States)
2010-12-17
We report the synthesis of luminescent, free standing silicon quantum dots by dry and wet etching of silicon and silicon oxide core/shell nanostructures, which are synthesized by controlled oxidation of mechanically milled silicon. Dry and wet etching performed with CF{sub 4} plasma and aqueous HF, respectively, result in the removal of the thick oxide shell of the core/shell nanostructures and affect an additional step of size reduction. HF etch is capable of producing isolated, spherical quantum dots of silicon with dimensions {approx} 2 nm. However, the etching processes introduce unsaturated bonds at the surface of the nanocrystals which are subsequently passivated by oxygen on exposure to ambient atmosphere. The photoluminescence spectra of the colloidal suspensions of these nanocrystals are characterized by double peaks and excitation dependent shift of emission energy. Comparison of the structural, absorption and luminescence characteristics of the samples provides evidence for two competing transition processes-quantum confinement induced widened band gap related transitions and oxide associated interface state mediated transitions. The results enable us to experimentally distinguish between the contributions of the two different transition mechanisms, which has hitherto been a challenging problem.
Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J
2013-04-19
The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.
Yeh, Te-Fu; Huang, Wei-Lun; Chung, Chung-Jen; Chiang, I-Ting; Chen, Liang-Che; Chang, Hsin-Yu; Su, Wu-Chou; Cheng, Ching; Chen, Shean-Jen; Teng, Hsisheng
2016-06-02
Investigating quantum confinement in graphene under ambient conditions remains a challenge. In this study, we present graphene oxide quantum dots (GOQDs) that show excitation-wavelength-independent photoluminescence. The luminescence color varies from orange-red to blue as the GOQD size is reduced from 8 to 1 nm. The photoluminescence of each GOQD specimen is associated with electron transitions from the antibonding π (π*) to oxygen nonbonding (n-state) orbitals. The observed quantum confinement is ascribed to a size change in the sp(2) domains, which leads to a change in the π*-π gap; the n-state levels remain unaffected by the size change. The electronic properties and mechanisms involved in quantum-confined photoluminescence can serve as the foundation for the application of oxygenated graphene in electronics, photonics, and biology.
Strong coupling of two interacting excitons confined in a nanocavity-quantum dot system
Energy Technology Data Exchange (ETDEWEB)
Cardenas, Paulo C; RodrIguez, Boris A [Instituto de Fisica, Universidad de Antioquia, AA 1226 MedellIn (Colombia); Quesada, Nicolas [McLennan Physical Laboratories, University of Toronto, 60 St George Street, Toronto, ON, M5S 1A7 (Canada); Vinck-Posada, Herbert, E-mail: pcardenas@fisica.udea.edu.co [Departamento de Fisica, Universidad Nacional de Colombia, Ciudad Universitaria, Bogota (Colombia)
2011-07-06
We present a study of the strong coupling between radiation and matter, considering a system of two quantum dots, which are in mutual interaction and interact with a single mode of light confined in a semiconductor nanocavity. We take into account dissipative mechanisms such as the escape of the cavity photons, decay of the quantum dot excitons by spontaneous emission, and independent exciton pumping. It is shown that the mutual interaction between the dots can be measured off-resonance only if the strong coupling condition is reached. Using the quantum regression theorem, a reasonable definition of the dynamical coupling regimes is introduced in terms of the complex Rabi frequency. Finally, the emission spectrum for relevant conditions is presented and compared with the above definition, demonstrating that the interaction between the excitons does not affect the strong coupling.
2013-04-16
AUTHOR(S) J. Schaibley, A. Burgers, G. McCracken , L. Duan, P. Berman, D. Steel, A. Bracker, D. Gammon, and I. Sham 5d. PROJECT NUMBER QEST 5e...TERMS quantum entanglement, electron spin, photon, quantum dot, laser J. R. Schaibley, A. P. Burgers, G. A. McCracken , L.-M. Duan, P. R. Berman, D...Single Electron Spin Confined to an InAs Quantum Dot and a Photon J. R. Schaibley, A. P. Burgers, G.A. McCracken , L.-M. Duan, P. R. Berman, and D.G
Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer
Kuryliuk, V.; Korotchenkov, O.; Cantarero, A.
2012-02-01
We present computational results for strain effects on charge carrier confinement in GexSi1-x quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier probability density distributions are obtained using the continuum elasticity theory and the effective-mass approximation implemented by a finite-element modeling scheme. Using realistic parameters and conditions for hemisphere and pyramid QDs, it is pointed out that an uncapped hemisphere dot deposited on the Si surface with an intermediate ultrathin oxide layer offers advantageous electron-hole separation distances with respect to a square-based pyramid grown directly on Si. The enhanced separation is associated with a larger electron localization depth in the Si substrate for uncapped hemisphere dots. Thus, for dot diameters smaller than 15-20 nm and surface density of the dots (nQD) ranging from about 1010 to 1012 cm-2, the localization depth may be enhanced from about 8 nm for a pyramid to 38 nm for a hemisphere dot. We find that the effect in a hemisphere dot is very sensitive to the dot density and size, whereas the localization depth is not significantly affected by the variation of the Ge fraction x in GexSi1-x and the aspect ratio of the dot. We also calculate the effect of the fixed oxide charge (Qox) with densities ranging from 10-9 to 10-7 C/cm2 for 10-Ωcm p-type Si wafers on the carrier confinement. Although the confinement potential can be strongly perturbed by the charge at nQD less than ≈4×1011 cm-2, it is not very sensitive to the value of Qox at higher nQD. Since, to our knowledge, there are no data on carrier confinement for Ge QDs deposited on oxidized Si surfaces, these results might be applicable to functional devices utilizing separated electrons and holes such as photovoltaic devices, spin transistors, and quantum computing components. The use of hemisphere QDs placed on oxidized Si rather than pyramid dots grown on bare Si may help to confine charge carriers deeper
Confined excitons in a semiconductor quantum dot in a magnetic field
Nomura, Shintaro; Segawa, Yusaburo; Kobayashi, Takayoshi
1994-05-01
Magnetic field effects in a semiconductor quantum dot (QD) are studied theoretically. Magneto-optical effects originating from electron-hole pairs in the lowest and the higher excited states are discussed. The theory is based on the effective-mass approximation with the following effects taken into account: the direct Coulomb interaction, the electron-hole exchange interaction, and the valence-band mixing effect. A calculation is performed with a numerical diagonalization method. The transition from the quantum confined Zeeman effect for a weak magnetic field to the quantum confined Paschen-Back effect for a strong magnetic field is discussed. Special attention is paid to a magnetic field dependence of the optical transition probabilities which is found to be a pronounced effect for a CdSe QD, where the confinement by a potential and a magnetic field have competing contributions.
Confinement effect in a quantum well dot induced by an InP stressor
Tulkki, J.; Heinämäki, A.
1995-09-01
We have calculated the confinement effect in an In1-xGaxAs/GaAs quantum well dot induced by a dislocation-free InP stressor island. The energy levels were calculated by including the strain interaction and the band-edge confinement in the Luttinger-Kohn Hamiltonian. The maximum level spacing for the dipole-allowed interband E1-->HH1 line spectrum was 20 meV. Our calculation also gives excellent agreement with recent measurements [H. Lipsanen, M. Sopanen, and J. Ahopelto, Phys. Rev. B 51, 13 868 (1995)] and provides indirect evidence of screened Coulomb interaction, tentatively addressed to slow carrier relaxation.
Transversal confined polar optical phonons in spherical quantum-dot/quantum-well nanostructures
Comas, F.; Trallero-Giner, C.; Prado, S. J.; Marques, G. E.; Roca, E.
2006-02-01
Confined polar optical phonons are studied in a spherical quantum-dot/quantum-well (QD/QW) nanostructure by using an approach that takes into account the coupling of electromechanical oscillations and is valid in the long-wave limit. This approach was developed a few years ago and provides results beyond the usually applied dielectric continuum approach (DCA), where just the electric aspect of the oscillations is considered. In the present paper we limit ourselves to the study of the so-called uncoupled modes, having a purely transversal character and not involving an electric potential. We display the dispersion curves for the frequencies considering three possible nanostructures, which show different bulk phonon curvatures near the Brillouin zone -point and have been actually grown: ZnS/CdSe, CdSe/CdS and CdS/HgS. A detailed discussion of the results obtained is made, emphasizing the novelties provided by our treatment and the relevance of infrared spectroscopy in the characterization of the geometrical features of the QD/QW nanostructure.
Directory of Open Access Journals (Sweden)
Changiz. Vatankhah
2015-06-01
Full Text Available Nano particles of zinc sulfide (ZnS of face centered cubic (fcc structures were synthesized using sulphur source of soium sulphide and mercaptoethanol respectively via Chemical Bath Deposition method. The synthesized quantum dots were characterized using X-ray diffraction (XRD, transmission electron microscopy (TEM and UV-visible spectrophotometry. The average crystallite size calculated from TEM and XRD pattern has been found to in the range 4.6 – 1.9 nm, the pariticles size decreases with the increase of the capping agent concentrations from 0. 001 to 0.7 Mol. The absorption coefficient in the range 325 - 250 nm decreases with increasing capping agent and the particles. ZnS nanoparticles were also derived from time independent Schrodinger equations for ZnS system and calculated the coefficient absorption using the density functional theory (DFT . It is shown that decreasing of ZnS nanosize lead to changes the optical properties and coefficient absorption in the visible region does not occur and the particles act like a transparent material. In this work, the blue shift was observed in absorption-wavelength both theoretical and experimental method due to the quantum confinement effects.
Role of confinements on the melting of Wigner molecules in quantum dots
Bhattacharya, Dyuti; Filinov, Alexei V.; Ghosal, Amit; Bonitz, Michael
2016-03-01
We explore the stability of a Wigner molecule (WM) formed in confinements with different geometries emulating the role of disorder and analyze the melting (or crossover) of such a system. Building on a recent calculation [D. Bhattacharya, A. Ghosal, Eur. Phys. J. B 86, 499 (2013)] that discussed the effects of irregularities on the thermal crossover in classical systems, we expand our studies in the untested territory by including both the effects of quantum fluctuations and of disorder. Our results, using classical and quantum (path integral) Monte Carlo techniques, unfold complementary mechanisms that drive the quantum and thermal crossovers in a WM and show that the symmetry of the confinement plays no significant role in determining the quantum crossover scale n X . This is because the zero-point motion screens the boundary effects within short distances. The phase diagram as a function of thermal and quantum fluctuations determined from independent criteria is unique, and shows "melting" from the WM to both the classical and quantum "liquids". An intriguing signature of weakening liquidity with increasing temperature, T, is found in the extreme quantum regime. The crossover is associated with production of defects. However, these defects appear to play distinct roles in driving the quantum and thermal "melting". Our analyses carry serious implications for a variety of experiments on many-particle systems - semiconductor heterostructure quantum dots, trapped ions, nanoclusters, colloids and complex plasma.
Mishra, Rakesh K.; Vedeshwar, A. G.; Tandon, R. P.
2014-02-01
The diffusion-controlled growth of CdS quantum dots (QDs) dispersed in a silicate glass matrix was investigated. It was found that the size of CdS QDs can be controlled by either heat treatment at various temperatures for a fixed duration or varying times at a constant temperature. Pastel yellow colored glass samples were obtained due to the presence of CdS petite crystals. X-ray diffraction (XRD) was used for determining the average dot size which varied from 3.8 to 30 nm. The typical quantum confinement effect was clearly observed from the blue shift measured in the optical absorption edge with decreasing dot size in the absorption spectroscopy. The band gap of CdS QDs ranges from 2.41 to 2.82 eV. Measured photoluminescence (PL) at an excitation wavelength of 350 nm showed the red shift of emission wavelength with increasing thermal treatment time and temperature in agreement with the increasing dot sizes. The half-width of PL spectra seems to indicate qualitatively the size distribution of dots and is consistent with the treatment parameters.
The confinement effect in spherical inhomogeneous quantum dots and stability of excitons
Directory of Open Access Journals (Sweden)
F. Benhaddou
2017-06-01
Full Text Available We investigate in this work the quantum confinement effect of exciton in spherical inhomogeneous quantum dots IQDs. The spherical core is enveloped by two shells. The inner shell is a semiconductor characterized by a small band-gap. The core and the outer shell are the same semiconductor characterized by a large band-gap. So there is a significant gap-offset creating a deep potential well where the excitons are localized and strongly confined. We have adopted the Ritz variational method to calculate numerically the excitonic ground state energy and its binding energy in the strong, moderate and low confinement regimes. The results show that the Ritz variational method is in good agreement with the perturbation method in strong confinement. There is a double confinement effect and dual control. The calculation checks the effective Rydberg R* at the asymptotic limit of bulk semiconductor when the thickness takes very large values. The excitonic binding energy increases, Thus giving the excitons a high stability even at ambient temperature. These nanosystems are promising in several applications: lighting, detection, biological labeling and quantum computing.
The confinement effect in spherical inhomogeneous quantum dots and stability of excitons
Benhaddou, F.; Zorkani, I.; Jorio, A.
2017-06-01
We investigate in this work the quantum confinement effect of exciton in spherical inhomogeneous quantum dots IQDs. The spherical core is enveloped by two shells. The inner shell is a semiconductor characterized by a small band-gap. The core and the outer shell are the same semiconductor characterized by a large band-gap. So there is a significant gap-offset creating a deep potential well where the excitons are localized and strongly confined. We have adopted the Ritz variational method to calculate numerically the excitonic ground state energy and its binding energy in the strong, moderate and low confinement regimes. The results show that the Ritz variational method is in good agreement with the perturbation method in strong confinement. There is a double confinement effect and dual control. The calculation checks the effective Rydberg R* at the asymptotic limit of bulk semiconductor when the thickness takes very large values. The excitonic binding energy increases, Thus giving the excitons a high stability even at ambient temperature. These nanosystems are promising in several applications: lighting, detection, biological labeling and quantum computing.
Energies and densities of electrons confined in elliptical and ellipsoidal quantum dots
Halder, Avik; Kresin, Vitaly V.
2016-10-01
We consider a droplet of electrons confined within an external harmonic potential well of elliptical or ellipsoidal shape, a geometry commonly encountered in work with semiconductor quantum dots and other nanoscale or mesoscale structures. For droplet sizes exceeding the effective Bohr radius, the dominant contribution to average system parameters in the Thomas-Fermi approximation comes from the potential energy terms, which allows us to derive expressions describing the electron droplet’s shape and dimensions, its density, total and capacitive energy, and chemical potential. The analytical results are in very good agreement with experimental data and numerical calculations, and make it possible to follow the dependence of the properties of the system on its parameters (the total number of electrons, the axial ratios and curvatures of the confinement potential, and the dielectric constant of the material). An interesting feature is that the eccentricity of the electron droplet is not the same as that of its confining potential well.
Zhang, Zhenkui; Dai, Ying; Yu, Lin; Guo, Meng; Huang, Baibiao; Whangbo, Myung-Hwan
2012-03-07
In light of the established differences between the quantum confinement effect and the electron affinities between hydrogen-passivated C and Si quantum dots, we carried out theoretical investigations on SiC quantum dots, with surfaces uniformly terminated by C-H or Si-H bonds, to explore the role of surface terminations on these two aspects. Surprisingly, it was found that the quantum confinement effect is present (or absent) in the highest occupied (or lowest unoccupied) molecular orbital of the SiC quantum dots regardless of their surface terminations. Thus, the quantum confinement effect related to the energy gap observed experimentally (Phys. Rev. Lett., 2005, 94, 026102) is contributed to by the size-dependence of the highest occupied states; the absence of quantum confinement in the lowest unoccupied states is in contrary to the usual belief based on hydrogen-passivated C quantum dots. However, the cause of the absence of the quantum confinement in C nanodots is not transferable to SiC. We propose a model that provides a clear explanation for all findings on the basis of the nearest-neighbor and next-nearest-neighbor interactions between the valence atomic p-orbital in the frontier occupied/unoccupied states. We also found that the electron affinities of the SiC quantum dots, which closely depend on the surface environments, are negative for the C-H termination and positive for the Si-H termination. The prediction of negative electron affinities in SiC quantum dots by simple C-H termination indicates a promising application for these materials in electron-emitter devices. Our model predicts that GeC quantum dots with hydrogen passivation exhibit similar features to SiC quantum dots and our study confirms the crucial role that the surface environment plays in these nanoscale systems.
Electrostatically Confined Monolayer Graphene Quantum Dots with Orbital and Valley Splittings.
Freitag, Nils M; Chizhova, Larisa A; Nemes-Incze, Peter; Woods, Colin R; Gorbachev, Roman V; Cao, Yang; Geim, Andre K; Novoselov, Kostya S; Burgdörfer, Joachim; Libisch, Florian; Morgenstern, Markus
2016-09-14
The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in bilayer graphene. So far, these approaches suffer from edge disorder or insufficiently controlled localization of electrons. Here we realize an alternative strategy in monolayer graphene, by combining a homogeneous magnetic field and electrostatic confinement. Using the tip of a scanning tunneling microscope, we induce a confining potential in the Landau gaps of bulk graphene without the need for physical edges. Gating the localized states toward the Fermi energy leads to regular charging sequences with more than 40 Coulomb peaks exhibiting typical addition energies of 7-20 meV. Orbital splittings of 4-10 meV and a valley splitting of about 3 meV for the first orbital state can be deduced. These experimental observations are quantitatively reproduced by tight binding calculations, which include the interactions of the graphene with the aligned hexagonal boron nitride substrate. The demonstrated confinement approach appears suitable to create quantum dots with well-defined wave function properties beyond the reach of traditional techniques.
Vogel, Dayton Jon; Kryjevski, Andrei; Inerbaev, Talgat M; Kilin, Dmitri S
2017-03-21
Methyl-ammonium lead iodide perovskite (MAPbI3) is a promising material for photovoltaic devices. A modification of the MAPbI3 into confined nanostructures is expected to further increase efficiency of solar energy conversion. Photo-excited dynamic processes in a MAPbI3 quantum dot (QD) have been modeled by many-body perturbation theory and nonadiabatic dynamics. A photoexcitation is followed by either exciton cooling (EC), its radiative (RR) or non-radiative recombination (NRR), or multi-exciton generation (MEG) processes. Computed times of these processes fall in the order of MEG < EC < RR < NRR, where MEG is in the order of a few femtoseconds, EC at the picosecond range while RR and NRR are in the order of nanoseconds. Computed timescales indicate which electronic transition pathways can contribute to increase in charge collection efficiency. Simulated mechanism relaxation rates show that quantum confinement promotes MEG in MAPbI3 QDs.
Energy Technology Data Exchange (ETDEWEB)
Anas, M. M.; Othman, A. P.; Gopir, G. [School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600, Bangi, Selangor (Malaysia)
2014-09-03
Density functional theory (DFT), as a first-principle approach has successfully been implemented to study nanoscale material. Here, DFT by numerical basis-set was used to study the quantum confinement effect as well as electronic properties of silicon quantum dots (Si-QDs) in ground state condition. Selection of quantum dot models were studied intensively before choosing the right structure for simulation. Next, the computational result were used to examine and deduce the electronic properties and its density of state (DOS) for 14 spherical Si-QDs ranging in size up to ∼ 2 nm in diameter. The energy gap was also deduced from the HOMO-LUMO results. The atomistic model of each silicon QDs was constructed by repeating its crystal unit cell of face-centered cubic (FCC) structure, and reconstructed until the spherical shape obtained. The core structure shows tetrahedral (T{sub d}) symmetry structure. It was found that the model need to be passivated, and hence it was noticed that the confinement effect was more pronounced. The model was optimized using Quasi-Newton method for each size of Si-QDs to get relaxed structure before it was simulated. In this model the exchange-correlation potential (V{sub xc}) of the electrons was treated by Local Density Approximation (LDA) functional and Perdew-Zunger (PZ) functional.
Heat capacity and entropy of a GaAs quantum dot with Gaussian confinement.
Boyacioglu, B; Chatterjee, A
2012-10-15
The heat capacity and entropy effects in a GaAs quantum dot with Gaussian confinement are calculated in the presence of a magnetic field and its interaction with the electron spin using the canonical ensemble approach. It is shown that the heat capacity shows a Schottky-like anomaly at a low temperature, while it approaches a saturation value 2k(B) as the temperature increases. As a function of the magnetic field, the heat capacity shows a maximum and then reduces to zero. Also the width of the maximum becomes wider with temperature. It is also shown that the heat capacity remains constant up to a certain value of the confinement length beyond which it displays a monotonic increase. However as a function of the confinement strength, though the heat capacity initially shows a significant drop, it remains constant thereafter. At low temperatures like T = 10 and 20 K, the entropy is found to decrease with increasing magnetic field, but at higher temperatures, it remains almost independent of the magnetic field. At high temperatures, entropy shows a monotonic increase with temperature, but at a sufficiently low temperature as the magnetic field decreases, the entropy is found to develop a shoulder which becomes more and more pronounced with decreasing magnetic field.
Debellis, Doriana; Gigli, Giuseppe; Ten Brinck, Stephanie; Infante, Ivan; Giansante, Carlo
2017-02-08
Nowadays it is well-accepted to attribute bulk-like optical absorption properties to colloidal PbS quantum dots (QDs) at wavelengths above 400 nm. This assumption permits to describe PbS QD light absorption by using bulk optical constants and to determine QD concentration in colloidal solutions from simple spectrophotometric measurements. Here we demonstrate that PbS QDs experience the quantum confinement regime across the entire near UV-vis-NIR spectral range, therefore also between 350 and 400 nm already proposed to be sufficiently far above the band gap to suppress quantum confinement. This effect is particularly relevant for small PbS QDs (with diameter of ≤4 nm) leading to absorption coefficients that largely differ from bulk values (up to ∼40% less). As a result of the broadband quantum confinement and of the high surface-to-volume ratio peculiar of nanocrystals, suitable surface chemical modification of PbS QDs is exploited to achieve a marked, size-dependent enhancement of the absorption coefficients compared to bulk values (up to ∼250%). We provide empirical relations to determine the absorption coefficients at 400 nm of as-synthesized and ligand-exchanged PbS QDs, accounting for the broadband quantum confinement and suggesting a heuristic approach to qualitatively predict the ligand effects on the optical absorption properties of PbS QDs. Our findings go beyond formalisms derived from Maxwell Garnett effective medium theory to describe QD optical properties and permit to spectrophotometrically calculate the concentration of PbS QD solutions avoiding underestimation due to deviations from the bulk. In perspective, we envisage the use of extended π-conjugated ligands bearing electronically active substituents to enhance light-harvesting in QD solids and suggest the inadequacy of the representation of ligands at the QD surface as mere electric dipoles.
Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots
Energy Technology Data Exchange (ETDEWEB)
Kuldova, K; Vyborny, Z; Pangrac, J; Oswald, J [Institute of Physics of the AS CR, v. v. i., Cukrovarnicka 10, CZ-162 00 Praha 6 (Czech Republic); Molas, M; Borysiuk, J; Babinski, A, E-mail: kuldova@fzu.c [Institute of Experimental Physics, University of Warsaw, Ho z-dot a 69, PL-00-681 Warszawa (Poland)
2010-09-01
In this communication we report on low-temperature, micro-photoluminescence study of quantum confinement in MOVPE-grown structures with InAs/GaAs quantum dots (QDs) with GaAs and/or strain reducing InGaAs/GaAs capping. We focus our attention on sharp emission lines, which appear in both structures at energies up to 80 meV below the wetting line emission. Power-dependent measurements confirmed their attribution to single excitons as well as biexcitons. Negative binding energy of biexcitons with systematic dependence on their energy was observed. It has been proposed that the investigated emission lines result from radiative recombination in flat non-fully developed QDs in the investigated structure. The attribution is confirmed by transmission electron microscopic analysis of investigated structures.
Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film
Institute of Scientific and Technical Information of China (English)
Chi Yaqing; Zhong Haiqin; Zhang Xueao; Fang Liang; Chang Shengli
2009-01-01
Periodic disposed quantum dot arrays are very useful for the large scale integration of single electron devices. Gold quantum dot arrays were self-assembled inside pore channels of ordered amino-functionalized mesoporous silica thin films, employing the neutralization reaction between chloroauric acid and amino groups. The diameters of quantum dots are controlled via changing the aperture of pore channels from 2.3 to 8.3 nm, which are characterized by HRTEM, SEM and FT-IR. UV-vis absorption spectra of gold nanoparticle/mesoporous silica composite thin films exhibit a blue shift and intensity drop of the absorption peak as the aperture of mesopores decreases,which represents the energy level change of quantum dot arrays due to the quantum size effect.
A Confined Fabrication of Perovskite Quantum Dots in Oriented MOF Thin Film.
Chen, Zheng; Gu, Zhi-Gang; Fu, Wen-Qiang; Wang, Fei; Zhang, Jian
2016-10-10
Organic-inorganic hybrid lead organohalide perovskites are inexpensive materials for high-efficiency photovoltaic solar cells, optical properties and superior electrical conductivity. However, the fabrication of their quantum dots (QDs) with uniform ultra-small particles is still a challenge. Here we use oriented microporous metal-organic framework (MOF) thin film prepared by liquid phase epitaxy approach as a template for CH3NH3PbI2X (X = Cl, Br and I) perovskite QDs fabrication. By introducing the PbI2 and CH3NH3X (MAX) precursors into MOF HKUST-1 (Cu3(BTC)2, BTC = 1,3,5-benzene tricarboxylate) thin film in a stepwise approach, the resulted perovskite MAPbI2X (X = Cl, Br and I) QDs with uniform diameters of 1.5~2 nm match to the pore size of HKUST-1. Furthermore, the photoluminescent properties and stability in the moist air of the perovskite QDs loaded HKUST-1 thin film were studied. This confined fabrication strategy demonstrates that the perovskite QDs loaded MOF thin film will be insensitive to air exposure and offers a novel means of confining the uniform size of the similar perovskite QDs according to the oriented porous MOF materials.
Cosentino, S; Mio, A M; Barbagiovanni, E G; Raciti, R; Bahariqushchi, R; Miritello, M; Nicotra, G; Aydinli, A; Spinella, C; Terrasi, A; Mirabella, S
2015-07-14
Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally sharp and clean, significant deviations from the QC rule appear and other parameters beyond the nanostructure size play a considerable role. In this work we elucidate the role of the interface on QC in Ge quantum dots (QDs) synthesized by rf-magnetron sputtering or plasma enhanced chemical vapor deposition (PECVD). Through a detailed electron energy loss spectroscopy (EELS) analysis we investigated the structural and chemical properties of QD interfaces. PECVD QDs exhibit a sharper interface compared to sputter ones, which also evidences a larger contribution of mixed Ge-oxide states. Such a difference strongly modifies the QC strength, as experimentally verified by light absorption spectroscopy. A large size-tuning of the optical bandgap and an increase in the oscillator strength occur when the interface is sharp. A spatially dependent effective mass (SPDEM) model is employed to account for the interface difference between Ge QDs, pointing out a larger reduction in the exciton effective mass in the sharper interface case. These results add new insights into the role of interfaces on confined systems, and open the route for reliable exploitation of QC effects.
Optical response of confined excitons in GaInAsSb/GaSb Quantum Dots heterostructures
Energy Technology Data Exchange (ETDEWEB)
Sanchez-Cano, R [Departamento de Fisica, Universidad Autonoma de Occidente, A.A. 2790, Cali (Colombia); Tirado-Mejia, L; Fonthal, G; Ariza-Calderon, H [Laboratorio de Optoelectronica, Universidad del Quindio, A.A. 4603 Armenia (Colombia); Porras-Montenegro, N, E-mail: rsanchez40@gmail.co [Departamento de Fisica, Universidad del Valle, A.A. 25360, Cali (Colombia)
2009-05-01
The narrow-gap Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} compounds are suitable materials for heterostructure devices operating in the infrared wavelength range. In these compounds grown by liquid phase epitaxy over GaSb single crystals, for x and y values in the range of 0.10 to 0.14 for both variables, the photoluminescence optical response at 12K is blue-shifted by 20 meV related to the photoreflectance response. We believe this behavior is due to possible higher electronic confinement in some places of the heterostructure, possibly formed in the interface during the growth process. In order to explain this behavior, in this work we study the exciton recombination energy in spherical Quantum Dots (QDs) on Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, using the variational procedure within the effective-mass approximation and considering an electron in a Type I band alignment formed by two semiconductors with similar parabolic conduction bands. Our results are in good agreement with recent experimental results.
Ikhdair, Sameer M
2011-01-01
We obtain the exact energy spectra and corresponding wave functions of the radial Schr\\"odinger equation (RSE) for any (n,l) state in the presence of a combination of psudoharmonic, Coulomb and linear confining potential terms using an exact analytical iteration method. The interaction potential model under consideration is Cornell-modified plus harmonic (CMpH) type which is a correction form to the harmonic, Coulomb and linear confining potential terms. It is used to investigates the energy of electron in spherical quantum dot and the heavy quarkonia (QQ-onia).
Binding Energy of D- and D0 Centers Confined by Spherical Quantum Dots
Institute of Scientific and Technical Information of China (English)
BAO Yuan-Peng; XIE Wen-Fang
2008-01-01
We study a negative donor center, a neutral donor in a spherical Gaussian potential quantum dot by using the matrix diagonalization of Hamiltonian within the effective-mass approximation. We calculate the energy E(D-) as functions of Gaussian potential size and depth, the same calculations as performed with the parabolic approximation. The dependence of the ground state of the neutral shallow donor and the negatively charged donor on the dot size and the potential depth is investigated.
Photoinduced band filling in strongly confined colloidal PbS quantum dots
Energy Technology Data Exchange (ETDEWEB)
Ullrich, B., E-mail: bruno@fis.unam.mx [Instituto de Ciencias Físicas, Universidad Nacional Autónoma de México, Cuernavaca, Morelos 62210 (Mexico); Ullrich Photonics LLC, Wayne, Ohio 43466 (United States); Xi, H. [Department of Physics and Astronomy, Bowling Green State University, Bowling Green, Ohio 43403-0209 (United States); Wang, J. S. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson AFB, Ohio 45433-7707 (United States)
2014-06-21
Increase in continuous wave laser excitation (6 W/cm{sup 2} to 120 W/cm{sup 2}) of colloidal PbS quantum dots in the strongly quantized regime (diameters 2.0 nm and 4.7 nm) deposited on semi-insulating GaAs and glass causes a clear blue shift (0.019 eV and 0.080 eV) of the emission spectra. Proof of the applicability of a dynamic three-dimensional band filling model is the significance of the presented results and demonstrates the effective electronic coupling in quantum dot arrays similar to superlattices. The work also reveals the influence of quantum dot sizes on photo-doping effects.
Photoinduced band filling in strongly confined colloidal PbS quantum dots
Ullrich, B.; Xi, H.; Wang, J. S.
2014-06-01
Increase in continuous wave laser excitation (6 W/cm2 to 120 W/cm2) of colloidal PbS quantum dots in the strongly quantized regime (diameters 2.0 nm and 4.7 nm) deposited on semi-insulating GaAs and glass causes a clear blue shift (0.019 eV and 0.080 eV) of the emission spectra. Proof of the applicability of a dynamic three-dimensional band filling model is the significance of the presented results and demonstrates the effective electronic coupling in quantum dot arrays similar to superlattices. The work also reveals the influence of quantum dot sizes on photo-doping effects.
Solid Confinement of Quantum Dots in ZIF-8 for Efficient and Stable Color-Conversion White LEDs.
Ying, Wen; Mao, Yiyin; Wang, Xiaobing; Guo, Yi; He, Haiping; Ye, Zhizhen; Lee, Shuit-Tong; Peng, Xinsheng
2017-03-13
The powder form and low photoluminescence quantum yield (PLQY) of fluorescent metal-organic frameworks (MOFs) present a serious obstacle to fabricating high-efficiency film-like lighting devices. Here, we present a facile way to produce thin films of CdSex S1-x /ZnS quantum dots (QDs)@ZIF-8 with high PLQY by encapsulating red, green, and blue CdSex S1-x /ZnS QDs in ZIF-8 through a one-pot solid-confinement conversion process. The QDs@ZIF-8 thin film emits warm white light with good color quality and presents good thermal stability and long-term durability.
Electron correlations in quantum dots
Tipton, D L J
2001-01-01
Quantum dot structures confine electrons in a small region of space. Some properties of semiconductor quantum dots, such as the discrete energy levels and shell filling effects visible in addition spectra, have analogies to those of atoms and indeed dots are sometimes referred to as 'artificial atoms'. However, atoms and dots show some fundamental differences due to electron correlations. For real atoms, the kinetic energy of electrons dominates over their mutual Coulomb repulsion energy and for this reason the independent electron approximation works well. For quantum dots the confining potential may be shallower than that of real atoms leading to lower electron densities and a dominance of mutual Coulomb repulsion over kinetic energy. In this strongly correlated regime the independent electron picture leads to qualitatively incorrect results. This thesis concentrates on few-electron quantum dots in the strongly correlated regime both for quasi-one-dimensional and two-dimensional dots in a square confining p...
Hole confinement and dynamics in delta-doped Ge quantum dots
Halsall, M. P.; Dunbar, A. D. F.; Shiraki, Y.; Miura, M.; Wells, J. P. R.
2004-01-01
We report picosecond pump-probe studies of the dynamics of inter-level transitions in p-type Ge quantum dot structures using a free electron laser as a source of intense mid-infrared pulses. The wavelength-independent lifetime of around 210 ps is much longer than have been recently reported in SiGe/
>M Zieliński,
2013-11-01
I present a systematic study of self-assembled InAs/InP and InAs/GaAs quantum dot single-particle and many-body properties as a function of the quantum dot-surrounding matrix valence band offset. I use an atomistic, empirical tight-binding approach and perform numerically demanding calculations for half-million-atom nanosystems. I demonstrate that the overall confinement in quantum dots is a non-trivial interplay of two key factors: strain effects and the valence band offset. I show that strain effects determine both the peculiar structure of confined hole states of lens type InAs/GaAs quantum dots and the characteristic ‘shell-like’ structure of confined hole states in the commonly considered ‘low-strain’ lens type InAs/InP quantum dot. I also demonstrate that strain leads to single-band-like behavior of hole states of disk type (‘indium flushed’) InAs/GaAs and InAs/InP quantum dots. I show how strain and valence band offset affect quantum dot many-body properties: the excitonic fine structure, an important factor for efficient entangled photon pair generation, and the biexciton and charged exciton binding energies.
Institute of Scientific and Technical Information of China (English)
SUN Lian-Liang; LI Shu-Shen
2005-01-01
@@ We theoretically investigate the energy spectra of two-electron two-dimensional (2e 2D) quantum dots (QDs)confined by triangular potentials and bowl-like potentials in a magnetic field by exact diagonalization in the framework of effective mass theory. An in-plane electric field is found to contribute to the singlet-triplet transition of the ground state of the 2e 2D QDs confined by triangular or bowl-like potentials in a perpendicular magnetic field. The stronger the in-plane electric field, the smaller the magnetic field for the total spin of the ground states in the dot systems to change from S = 0 to S = 1. However, the influence of anin-plane electric field on the singlettriplet transition of the ground state of two electrons in a triangular QD modulated by a perpendicular magnetic field is quite small because the triangular potential just deviates from the harmonic potential well slightly. We find that the strength of the perpendicular magnetic field needed for the spin singlet-triplet transition of the ground state of the QD confined by a bowl-like potential is reduced drastically by applying an in-plane electric field.
Bipolaron in different configuration of quantum confinement
Institute of Scientific and Technical Information of China (English)
阮永红; 陈庆虎; 焦正宽
2004-01-01
The authors used Landau-Pekar variational method to investigate a strong-coupling singlet optical bipolaron in different configuration of quantum confinement.Numerical and analytical results showed that when configuration changes from quantum dot and wire to well,confinement shows different effect on the formation of a bipolaron.In contrast to a bipolaron in a quantum dot or wire,the binding energy of a bipolaron in a quantum well increases with increasing confinement,indicating that confinement favors bipolaron formation in a quantum well.
Bipolaron in different configuration of quantum confinement
Institute of Scientific and Technical Information of China (English)
阮永红; 陈庆虎; 焦正宽
2004-01-01
The authors used Landau-Pekar variational method to investigate a strong-coupling singlet optical bipolaron in different configuration of quantum confinement. Numerical and analytical results showed that when configuration changes from quantum dot and wire to well, confinement shows different effect on the formation of a bipolaron. In contrast to a bipolaron in a quantum dot or wire, the binding energy of a bipolaron in a quantum well increases with increasing con-finement, indicating that confinement favors bipolaron formation in a quantum well.
Directory of Open Access Journals (Sweden)
Somsak Panyakeow
2010-10-01
Full Text Available Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called 'Droplet Epitaxy' has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390'C with a droplet growth rate of 1ML/s. Arsenic flux (7'8'10-6Torr is then exposed for InGaAs crystallization at 200'C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or, which are preferable crystallographic directions of quantum dot alignment in general.
Energy Technology Data Exchange (ETDEWEB)
P J, Monisha, E-mail: pjmonisha@gmail.com [School of Physics, University of Hyderabad, Hyderabad 500046 (India); Mukhopadhyay, Soma [Department of Physics, D V R college of Engineering and Technology, Hyderabad 502285 (India)
2015-05-01
The effect of electron–phonon interaction on a few low-lying energy levels in a polar semiconductor quantum dot with Gaussian confinement is studied by using an improved Wigner–Brillouin perturbation theory (IWBPT). In the absence of the electron–phonon interaction, the electronic ground state plus one phonon state is degenerate with the first excited electronic state plus the zero-phonon state at some value of the confinement length. Similarly, the electronic ground state plus one phonon state is also degenerate with the second excited electronic state plus the zero-phonon state at a larger value of the confinement length. It is shown that the electron–phonon interaction lifts these degeneracies and as a result, the excited state energy levels bend downward and get pinned to the ground state plus one phonon state as the confinement frequency is increased. Our calculations are finally applied to GaAs and InSb quantum dots.
Institute of Scientific and Technical Information of China (English)
Pang Qian-Jun
2007-01-01
Using unitary transformations, this paper obtains the eigenvalues and the common eigenvector of Hamiltonian and a new-defined generalized angular momentum (Lz) for an electron confined in quantum dots under a uniform magnetic field (UMF) and a static electric field (SEF). It finds that the eigenvalue of Lz just stands for the expectation value of a usual angular momentum lz in the eigen-state. It first obtains the matrix density for this system via directly calculating a transfer matrix element of operator exp(-βH) in some representations with the technique of integral within an ordered products (IWOP) of operators, rather than via solving a Bloch equation. Because the quadratic homogeneity of potential energy is broken due to the existence of SEF, the virial theorem in statistical physics is not satisfactory for this system, which is confirmed through the calculation of thermal averages of physical quantities.
Single semiconductor quantum dots
Energy Technology Data Exchange (ETDEWEB)
Michler, Peter (ed.) [Stuttgart Univ. (Germany). Inst. fuer Halbleiteroptik und Funktionelle Grenzflaechen
2009-07-01
This book reviews recent advances in the exciting and rapidly growing field of semiconductor quantum dots via contributions from some of the most prominent researchers in the scientific community. Special focus is given to optical, quantum optical, and spin properties of single quantum dots due to their potential applications in devices operating with single electron spins and/or single photons. This includes single and coupled quantum dots in external fields, cavity-quantum electrodynamics, and single and entangled photon pair generation. Single Semiconductor Quantum Dots also addresses growth techniques to allow for a positioned nucleation of dots as well as applications of quantum dots in quantum information technologies. (orig.)
DEFF Research Database (Denmark)
Leosson, Kristjan
Semiconductor quantum dots ("solid-state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra. Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dot states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used...
DEFF Research Database (Denmark)
Leosson, Kristjan
1999-01-01
Semiconductor quantum dots ("solid state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra.Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dots states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used...
POLARON IN CYLINDRICAL AND SPHERICAL QUANTUM DOTS
Directory of Open Access Journals (Sweden)
L.C.Fai
2004-01-01
Full Text Available Polaron states in cylindrical and spherical quantum dots with parabolic confinement potentials are investigated applying the Feynman variational principle. It is observed that for both kinds of quantum dots the polaron energy and mass increase with the increase of Frohlich electron-phonon coupling constant and confinement frequency. In the case of a spherical quantum dot, the polaron energy for the strong coupling is found to be greater than that of a cylindrical quantum dot. The energy and mass are found to be monotonically increasing functions of the coupling constant and the confinement frequency.
Zhu, Nan; Zheng, Kaibo; Karki, Khadga J; Abdellah, Mohamed; Zhu, Qiushi; Carlson, Stefan; Haase, Dörthe; Žídek, Karel; Ulstrup, Jens; Canton, Sophie E; Pullerits, Tõnu; Chi, Qijin
2015-05-21
Quantum dots (QDs) and graphene are both promising materials for the development of new-generation optoelectronic devices. Towards this end, synergic assembly of these two building blocks is a key step but remains a challenge. Here, we show a one-step strategy for organizing QDs in a graphene matrix via interfacial self-assembly, leading to the formation of sandwiched hybrid QD-graphene nanofilms. We have explored structural features, electron transfer kinetics and photocurrent generation capacity of such hybrid nanofilms using a wide variety of advanced techniques. Graphene nanosheets interlink QDs and significantly improve electronic coupling, resulting in fast electron transfer from photoexcited QDs to graphene with a rate constant of 1.3 × 10(9) s(-1). Efficient electron transfer dramatically enhances photocurrent generation in a liquid-junction QD-sensitized solar cell where the hybrid nanofilm acts as a photoanode. We thereby demonstrate a cost-effective method to construct large-area QD-graphene hybrid nanofilms with straightforward scale-up potential for optoelectronic applications.
Zhu, Nan; Zheng, Kaibo; Karki, Khadga J.; Abdellah, Mohamed; Zhu, Qiushi; Carlson, Stefan; Haase, Dörthe; Žídek, Karel; Ulstrup, Jens; Canton, Sophie E.; Pullerits, Tõnu; Chi, Qijin
2015-05-01
Quantum dots (QDs) and graphene are both promising materials for the development of new-generation optoelectronic devices. Towards this end, synergic assembly of these two building blocks is a key step but remains a challenge. Here, we show a one-step strategy for organizing QDs in a graphene matrix via interfacial self-assembly, leading to the formation of sandwiched hybrid QD-graphene nanofilms. We have explored structural features, electron transfer kinetics and photocurrent generation capacity of such hybrid nanofilms using a wide variety of advanced techniques. Graphene nanosheets interlink QDs and significantly improve electronic coupling, resulting in fast electron transfer from photoexcited QDs to graphene with a rate constant of 1.3 × 109 s-1. Efficient electron transfer dramatically enhances photocurrent generation in a liquid-junction QD-sensitized solar cell where the hybrid nanofilm acts as a photoanode. We thereby demonstrate a cost-effective method to construct large-area QD-graphene hybrid nanofilms with straightforward scale-up potential for optoelectronic applications.
Energy Technology Data Exchange (ETDEWEB)
Chen, Yuehui; Ma, Ligang; Yin, Yan; Qian, Xu; Zhou, Guotai; Gu, Xiaomin [National Laboratory of Solid State Microstructures and Photovoltaic Engineering Center, Department of Physics, Nanjing University, Nanjing (China); Liu, Wenchao, E-mail: wcliu@nju.edu.cn [National Laboratory of Solid State Microstructures and Photovoltaic Engineering Center, Department of Physics, Nanjing University, Nanjing (China); Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials - SICAM, Nanjing Tech University - NanjingTech, Nanjing (China); Wu, Xiaoshan, E-mail: xswu@nju.edu.cn [National Laboratory of Solid State Microstructures and Photovoltaic Engineering Center, Department of Physics, Nanjing University, Nanjing (China); Zhang, Fengming [National Laboratory of Solid State Microstructures and Photovoltaic Engineering Center, Department of Physics, Nanjing University, Nanjing (China)
2016-07-05
We developed an improved hydrothermal method with water-oil two-phase reaction system to synthesize size-controllable and oil-soluble Cu{sub 4}SnS{sub 4} (CTS) quantum dots (QDs). The water-oil interface played an important role in controlling nuclei process, growth speed, crystal size and size-distribution of CTS QDs. X-ray diffraction, Raman scattering and transmission electron microscopy studies suggested that the formation and growth mechanism of CTS QDs was revealed to involve three steps. The crystallographic orientation of the CTS nanoprism was analyzed in detail. The blue-shift of absorption edge and broadening of Raman bands were observed due to the quantum confinement effect. The exciton Bohr radius of CTS QDs was calculated to be 3.3–5.8 nm by using the first principle calculation. The size dependence of band-gaps of CTS QDs follows the particle-in-a-box effective-mass model. The ability to fabricate high-quality CTS QDs certainly facilitates the solar cell applications. - Highlights: • We develop an improved hydrothermal method to synthesize monodisperse CTS QDs. • The size can be controlled through controlling the oil/water ratio. • The quantum confinement effect is confirmed by experiments and calculation.
Energy Technology Data Exchange (ETDEWEB)
Frederick, Matthew T. [Northwestern Univ., Evanston, IL (United States); Weiss, Emily A. [Northwestern Univ., Evanston, IL (United States)
2010-01-01
Coordination of phenyldithiocarbamate (PTC) ligands to solution-phase colloidal CdSe quantum dots (QDs) decreases the optical band gap, E_{g}, of the QDs by up to 220 meV. These values of ΔE_{g} are the largest shifts achieved by chemical modification of the surfaces of solution-phase CdSe QDs and are—by more than an order of magnitude in energy—the largest bathochromic shifts achieved for QDs in either the solution or solid phases. Measured values of ΔE_{g} upon coordination to PTC correspond to an apparent increase in the excitonic radius of 0.26 ± 0.03 nm; this excitonic delocalization is independent of the size of the QD for radii, R = 1.1-1.9 nm. Density functional theory calculations indicate that the highest occupied molecular orbital of PTC is near resonant with that of the QD, and that the two have correct symmetry to exchange electron density (PTC is a π-donor, and the photoexcited QD is a π-acceptor). We therefore propose that the relaxation of exciton confinement occurs through delocalization of the photoexcited hole of the QD into the ligand shell.
DEFF Research Database (Denmark)
Leosson, Kristjan
1999-01-01
of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra.Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dots states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used......Semiconductor quantum dots ("solid state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... to probe coherence times of exciton states and relaxation processes, both of which are important for future applications....
DEFF Research Database (Denmark)
Leosson, Kristjan
of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra. Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dot states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used......Semiconductor quantum dots ("solid-state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... to probe coherence times of exciton states and relaxation processes, both of which are important for future applications....
Laterally Confined Modes in Wet-Etched,Metal-Coated,Quantum-Dot-Inserted Pillar Microcavities
Institute of Scientific and Technical Information of China (English)
ZHANG Hao; ZHENG Hou-Zhi; ZHANG Ji-Dong; XU Ping; TAN Ping-Heng; YANG Fu-Hua; ZENG Yi-Ping
2004-01-01
@@ We report the fabrication and the measurement of microcavities whose optical eigenmodes were discrete and were well predicted by using the model of the photonic dot with perfectly reflected sidewalls. These microcavities were consisted of the semiconductor pillar fabricated by the simple wet-etched process and successive metal coating. Angle-resolved photoluminescence spectra demonstrate the characteristic emission of the corresponding eigenmodes, as its pattern revealed by varying both polar (θ) and azimuthal (φ) angles. It is shown that the metal-coated sidewalls can provide an efficient way to suppress the emission due to the leaking modes in these pillar microcavities.
Optical Properties of Semiconductor Quantum Dots
Perinetti, U.
2011-01-01
This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots
Optical Properties of Semiconductor Quantum Dots
Perinetti, U.
2011-01-01
This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots mad
Directory of Open Access Journals (Sweden)
Daisuke Kosemura
2014-01-01
Full Text Available 100-nm-thick nanocrystalline silicon (nano-Si-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 5–6 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ∼ 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.
Bordas, Frédéric; Seassal, Christian; Dupuy, Emmanuel; Regreny, Philippe; Gendry, Michel; Viktorovitch, Pierre; Steel, M J; Rahmani, Adel
2009-03-30
We have designed, fabricated, and characterized an InP photonic crystal slab structure that supports a cavity-confined slow-light mode, i.e. a bandgap-confined valence band-edge mode. Three dimensional finite difference in time domain calculations predict that this type of structure can support electromagnetic modes with large quality factors and small mode volumes. Moreover these modes are robust with respect to fabrication imperfections. In this paper, we demonstrate room-temperature laser operation at 1.5 mum of a cavity-confined slow-light mode under pulsed excitation. The gain medium is a single layer of InAs/InP quantum dots. An effective peak pump power threshold of 80 microW is reported.
Large quantum dots with small oscillator strength
DEFF Research Database (Denmark)
Stobbe, Søren; Schlereth, T.W.; Höfling, S.
2010-01-01
We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots...... is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size assuming a quantum-dot confinement given by a parabolic in-plane potential and a hard-wall vertical potential and predict a very large...... oscillator strength due to Coulomb effects. This is in stark contrast to the measured oscillator strength, which turns out to be so small that it can be described by excitons in the strong confinement regime. We attribute these findings to exciton localization in local potential minima arising from alloy...
Quantum Dots and Their Multimodal Applications: A Review
Holloway, Paul H; Teng-Kuan Tseng; Lei Qian; Debasis Bera
2010-01-01
Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons ...
Energy Technology Data Exchange (ETDEWEB)
Vukmirovic, Nenad; Wang, Lin-Wang
2009-11-10
This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.
Tang, Jiang
2010-02-23
We report colloidal quantum dot (CQDs) photovoltaics having a ∼930 nm bandgap. The devices exhibit AM1.5G power conversion efficiencies in excess of 2%. Remarkably, the devices are stable in air under many tens of hours of solar illumination without the need for encapsulation. We explore herein the origins of this ordersof-magnitude improvement in air stability compared to larger PbS dots. We find that small and large dots form dramatically different oxidation products, with small dots forming lead sulfite primarily and large dots, lead sulfate. The lead sulfite produced on small dots results in shallow electron traps that are compatible with excellent device performance; whereas the sulfates formed on large dots lead to deep traps, midgap recombination, and consequent catastrophic loss of performance. We propose and offer evidence in support of an explanation based on the high rate of oxidation of sulfur-rich surfaces preponderant in highly faceted large-diameter PbS colloidal quantum dots. © 2010 American Chemical Society.
Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.
2002-01-01
We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.
Double Acceptor Interaction in Semimagnetic Quantum Dot
Directory of Open Access Journals (Sweden)
A. Merwyn Jasper D. Reuben
2011-01-01
Full Text Available The effect of geometry of the semimagnetic Quantum Dot on the Interaction energy of a double acceptor is computed in the effective mass approximation using the variational principle. A peak is observed at the lower dot sizes as a magnetic field is increased which is attributed to the reduction in confinement.
Quantum-dot supercrystals for future nanophotonics
Baimuratov, Anvar S.; Rukhlenko, Ivan D.; Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.
2013-01-01
The study of supercrystals made of periodically arranged semiconductor quantum dots is essential for the advancement of emerging nanophotonics technologies. By combining the strong spatial confinement of elementary excitations inside quantum dots and exceptional design flexibility, quantum-dot supercrystals provide broad opportunities for engineering desired optical responses and developing superior light manipulation techniques on the nanoscale. Here we suggest tailoring the energy spectrum and wave functions of the supercrystals' collective excitations through the variation of different structural and material parameters. In particular, by calculating the excitonic spectra of quantum dots assembled in two-dimensional Bravais lattices we demonstrate a wide variety of spectrum transformation scenarios upon alterations in the quantum dot arrangement. This feature offers unprecedented control over the supercrystal's electromagnetic properties and enables the development of new nanophotonics materials and devices.
Wu, Jiang
2014-01-01
This book reviews recent advances in the exciting and rapidly growing field of quantum dot molecules (QDMs). It offers state-of-the-art coverage of novel techniques and connects fundamental physical properties with device design.
Güçlü, Alev Devrim; Korkusinski, Marek; Hawrylak, Pawel
2014-01-01
This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of
Quantum Size- Dependent Third- Order Nonlinear Optical Susceptibility in Semiconductor Quantum Dots
Institute of Scientific and Technical Information of China (English)
SUN Ting; XIONG Gui-guang
2005-01-01
The density matrix approach has been employed to investigate the optical nonlinear polarization in a single semiconductor quantum dot(QD). Electron states are considered to be confined within a quantum dot with infinite potential barriers. It is shown, by numerical calculation, that the third-order nonlinear optical susceptibilities for a typical Si quantum dot is dependent on the quantum size of the quantum dot and the frequency of incident light.
Quantum dots with single-atom precision.
Fölsch, Stefan; Martínez-Blanco, Jesús; Yang, Jianshu; Kanisawa, Kiyoshi; Erwin, Steven C
2014-07-01
Quantum dots are often called artificial atoms because, like real atoms, they confine electrons to quantized states with discrete energies. However, although real atoms are identical, most quantum dots comprise hundreds or thousands of atoms, with inevitable variations in size and shape and, consequently, unavoidable variability in their wavefunctions and energies. Electrostatic gates can be used to mitigate these variations by adjusting the electron energy levels, but the more ambitious goal of creating quantum dots with intrinsically digital fidelity by eliminating statistical variations in their size, shape and arrangement remains elusive. We used a scanning tunnelling microscope to create quantum dots with identical, deterministic sizes. By using the lattice of a reconstructed semiconductor surface to fix the position of each atom, we controlled the shape and location of the dots with effectively zero error. This allowed us to construct quantum dot molecules whose coupling has no intrinsic variation but could nonetheless be tuned with arbitrary precision over a wide range. Digital fidelity opens the door to quantum dot architectures free of intrinsic broadening-an important goal for technologies from nanophotonics to quantum information processing as well as for fundamental studies of confined electrons.
Electron Spins in Semiconductor Quantum Dots
Hanson, R.
2005-01-01
This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic
Optically active quantum-dot molecules.
Shlykov, Alexander I; Baimuratov, Anvar S; Baranov, Alexander V; Fedorov, Anatoly V; Rukhlenko, Ivan D
2017-02-20
Chiral molecules made of coupled achiral semiconductor nanocrystals, also known as quantum dots, show great promise for photonic applications owing to their prospective uses as configurable building blocks for optically active structures, materials, and devices. Here we present a simple model of optically active quantum-dot molecules, in which each of the quantum dots is assigned a dipole moment associated with the fundamental interband transition between the size-quantized states of its confined charge carriers. This model is used to analytically calculate the rotatory strengths of optical transitions occurring upon the excitation of chiral dimers, trimers, and tetramers of general configurations. The rotatory strengths of such quantum-dot molecules are found to exceed the typical rotatory strengths of chiral molecules by five to six orders of magnitude. We also study how the optical activity of quantum-dot molecules shows up in their circular dichroism spectra when the energy gap between the molecular states is much smaller than the states' lifetime, and maximize the strengths of the circular dichroism peaks by optimizing orientations of the quantum dots in the molecules. Our analytical results provide clear design guidelines for quantum-dot molecules and can prove useful in engineering optically active quantum-dot supercrystals and photonic devices.
Dongmei, Zheng; Zongchi, Wang; Boqi, Xiao
2015-03-01
Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field (BEF) in strained wurtzite ZnO/Mg0.25Zn0.75O quantum dots (QDs), the optical properties of ionized donor-bound excitons (D+, X) are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of (D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of (D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth. Project supported by the National Natural Science Foundation for Young Scientists of China (No. 11102100), the Program for New Century Excellent Talents in Fujian Province University (No. JA14285) and the Program for Young Top-Notch Innovative Talents of Fujian Province of China.
Ultrafast spectroscopy of quantum dots
Foo, E
2001-01-01
exchange-correlation interactions among the confined carriers inside the dots are suggested to be responsible. A density functional calculation for BGR of the ground state transition shows good agreement with our experimental results, especially in the high dot occupancy regime. Many-particle state scattering gives rise to large homogeneous spectral broadening of the PL peaks, from which an intradot relaxation time approx 300 fs is estimated. This observation supports the results obtained by direct excitation of carriers within the QDs. Femtosecond time-resolved photoluminescence measured by frequency up-conversion has been used to investigate carrier dynamics in InAs/GaAs self-assembled quantum dots (QDs). Our results reveal ultrafast carrier relaxation and sequential state filling. Carrier relaxation is proposed to occur by Auger-type processes, and the sequential state filling suggests that intradot relaxation is much faster than carrier capture from the InAs wetting layer. Measurements obtained by direct ...
Quantum Dots: An Experiment for Physical or Materials Chemistry
Winkler, L. D.; Arceo, J. F.; Hughes, W. C.; DeGraff, B. A.; Augustine, B. H.
2005-01-01
An experiment is conducted for obtaining quantum dots for physical or materials chemistry. This experiment serves to both reinforce the basic concept of quantum confinement and providing a useful bridge between the molecular and solid-state world.
Wu, Jiang
2013-01-01
The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou
Photoluminescence studies of single InGaAs quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher
1999-01-01
Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....
Tailoring Magnetism in Quantum Dots
Zutic, Igor; Abolfath, Ramin; Hawrylak, Pawel
2007-03-01
We study magnetism in magnetically doped quantum dots as a function of particle numbers, temperature, confining potential, and the strength of Coulomb interaction screening. We show that magnetism can be tailored by controlling the electron-electron Coulomb interaction, even without changing the number of particles. The interplay of strong Coulomb interactions and quantum confinement leads to enhanced inhomogeneous magnetization which persists at substantially higher temperatures than in the non-interacting case or in the bulk-like dilute magnetic semiconductors. We predict a series of electronic spin transitions which arise from the competition between the many-body gap and magnetic thermal fluctuations. Cond-mat/0612489. [1] R. Abolfath, P. Hawrylak, I. Zuti'c, preprint.
Ahmed, Ghada H.
2015-03-27
Here, we report a ground-state interaction between the positively charged cationic porphyrin and the negatively charged carboxylate groups of the thiol ligands on the surface of CdTe quantum dots (QDs), leading to the formation of a stable nanoassembly between the two components. Our time-resolved data clearly demonstrate that we can dramatically tune the intersystem crossing (ISC) and the triplet state lifetime of porphyrin by changing the size of the QDs in the nanoassembly.
Energy Technology Data Exchange (ETDEWEB)
Pejova, Biljana, E-mail: biljana@pmf.ukim.mk
2014-05-01
Raman scattering in combination with optical spectroscopy and structural studies by X-ray diffraction was employed to investigate the phonon confinement and strain-induced effects in 3D assemblies of variable-size zincblende ZnSe quantum dots close packed in thin film form. Nanostructured thin films were synthesized by colloidal chemical approach, while tuning of the nanocrystal size was enabled by post-deposition thermal annealing treatment. In-depth insights into the factors governing the observed trends of the position and half-width of the 1LO band as a function of the average QD size were gained. The overall shifts in the position of 1LO band were found to result from an intricate compromise between the influence of phonon confinement and lattice strain-induced effects. Both contributions were quantitatively and exactly modeled. Accurate assignments of the bands due to surface optical (SO) modes as well as of the theoretically forbidden transverse optical (TO) modes were provided, on the basis of reliable physical models (such as the dielectric continuum model of Ruppin and Englman). The size-dependence of the ratio of intensities of the TO and LO modes was studied and discussed as well. Relaxation time characterizing the phonon decay processes in as-deposited samples was found to be approximately 0.38 ps, while upon post-deposition annealing already at 200 °C it increases to about 0.50 ps. Both of these values are, however, significantly smaller than those characteristic for a macrocrystalline ZnSe sample. - Graphical abstract: Optical phonons in nanostructured thin films composed by zincblende zinc selenide quantum dots in strong size-quantization regime: competition between phonon confinement and strain-related effects. - Highlights: • Phonon confinement vs. strain-induced effects in ZnSe 3D QD assemblies were studied. • Shifts of the 1LO band result from an intricate compromise between the two effects. • SO and theoretically forbidden TO modes were
Spin transport through quantum dots
Energy Technology Data Exchange (ETDEWEB)
Lima, A.T. da Cunha; Anda, Enrique V. [Pontificia Univ. Catolica do Rio de Janeiro (PUC-Rio), RJ (Brazil)
2003-07-01
Full text: We investigate the spin polarized transport properties of a nanoscopic device constituted by a quantum dot connected to two leads. The electrical current circulates with a spin polarization that is modulated via a gate potential that controls the intensity of the spin-orbit coupling, the Rashba effect. We study a polarized field-effect transistor when one of its parts is constituted by a small quantum dot, which energies are controlled by another gate potential operating inside the confined region. The high confinement and correlation suffered by the charges inside the dot gives rise to novel phenomena. We show that through the manipulation of the gate potential applied to the dot it is possible to control, in a very efficient way, the intensity and polarization of the current that goes along the system. Other crucial parameters to be varied in order to understand the behavior of this system are the intensity of the external applied electric and magnetic field. The system is represented by the Anderson Impurity Hamiltonian summed to a spin-orbit interaction, which describes the Rashba effect. To obtain the current of this out-of-equilibrium system we use the Keldysh formalism.The solution of the Green function are compatible with the Coulomb blockade regime. We show that under the effect of a external magnetic field, if the dot is small enough the device operates as a complete spin filter that can be controlled by the gate potential. The behavior of this device when it is injected into it a polarized current and modulated by the Rashba effect is as well studied. (author)
Hexagonal graphene quantum dots
Ghosh, S.
2016-12-05
We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.
Klimov, Victor I
2010-01-01
""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do
Sapmaz, S.
2006-01-01
Low temperature electron transport measurements on individual single wall carbon nanotubes are described in this thesis. Carbon nanotubes are small hollow cylinders made entirely out of carbon atoms. At low temperatures (below ~10 K) finite length nanotubes form quantum dots. Because of its small
Sapmaz, S.
2006-01-01
Low temperature electron transport measurements on individual single wall carbon nanotubes are described in this thesis. Carbon nanotubes are small hollow cylinders made entirely out of carbon atoms. At low temperatures (below ~10 K) finite length nanotubes form quantum dots. Because of its small si
Directory of Open Access Journals (Sweden)
Marcelo Gonçalves Vivas
2017-03-01
Full Text Available We report here on the direct observation of distinct two-photon transition channels in glutathione-capped (GSH CdTe quantum dots (QDs in a very strong confinement regime. CdTe-GSH QDs with different average diameters (2.5, 3.0, and 3.3 nm were synthesized through the one-pot method and their two-photon absorption (2PA spectrum determined by a femtosecond wavelength-tunable Z-scan. Our results show that the two lower-energy one-photon-allowed excitonic transitions, 1S3/2(h → 1S(e and 2S3/2(h → 1S(e, are also accessed via 2PA. These results were ascribed to the relaxation of the parity selection rules due to the noncentrosymmetric structure of the CdTe QDs (zinc-blended structure, whose magnitude are determined by surface defects and structural irregularities present in CdTe-GSH QDs, in the strong confinement regime.
Quantum computation with two-dimensional graphene quantum dots
Institute of Scientific and Technical Information of China (English)
Li Jie-Sen; Li Zhi-Bing; Yao Dao-Xin
2012-01-01
We study an array of graphene nano sheets that form a two-dimensional S =1/2 Kagome spin lattice used for quantum computation.The edge states of the graphene nano sheets axe used to form quantum dots to confine electrons and perform the computation.We propose two schemes of bang-bang control to combat decoherence and realize gate operations on this array of quantum dots.It is shown that both schemes contain a great amount of information for quantum computation.The corresponding gate operations are also proposed.
Confined-but-Connected Quantum Solids via Controlled Ligand Displacement
Baumgardner, William J.
2013-07-10
Confined-but-connected quantum dot solids (QDS) combine the advantages of tunable, quantum-confined energy levels with efficient charge transport through enhanced electronic interdot coupling. We report the fabrication of QDS by treating self-assembled films of colloidal PbSe quantum dots with polar nonsolvents. Treatment with dimethylformamide balances the rates of self-assembly and ligand displacement to yield confined-but-connected QDS structures with cubic ordering and quasi-epitaxial interdot connections through facets of neighboring dots. The QDS structure was analyzed by a combination of transmission electron microscopy and wide-angle and small-angle X-ray scattering. Excitonic absorption signatures in optical spectroscopy confirm that quantum confinement is preserved. Transport measurements show significantly enhanced conductivity in treated films. © 2013 American Chemical Society.
Electron States of Few-Electron Quantum Dots
Institute of Scientific and Technical Information of China (English)
戴振宏; 孙金祚; 张立德; 李作宏; 黄士勇; 隋鹏飞
2002-01-01
We study few-electron semiconductor quantum dots using the unrestricted Hartree-Fock-Roothaan method based on the Gaussian basis. Our emphasis is on the energy level calculation for quantum dots. The confinement potential in a quantum dot is assumed to be in a form of three-dimensional spherical finite potential well. Some valuable results, such as the rearrangement of the energy level, have been obtained.
Dissipative tunneling in structures with quantum dots and quantum molecules
Dahnovsky, Yu. I.; Krevchik, V. D.; Semenov, M. B.; Yamamoto, K.; Zhukovsky, V. Ch.; Aringazin, A. K.; Kudryashov, E. I.; Mayorov, V. G.
2005-01-01
The problem of tunneling control in systems "quantum dot - quantum well" (as well as "quantum dot - quantum dot" or quantum molecule) and "quantum dot - bulk contact" is studied as a quantum tunneling with dissipation process in the semiclassical (instanton) approximation. For these systems temperature and correlation between a quantum dot radius and a quantum well width (or another quantum dot radius) are considered to be control parameters. The condition for a single electron blockade is fo...
Ahmed, Ghada H.
2015-01-01
Here, we report a ground-state interaction between the positively charged cationic porphyrin and the negatively charged carboxylate groups of the thiol ligands on the surface of CdTe quantum dots (QDs), leading to the formation of a stable nanoassembly between the two components. Our time-resolved data clearly demonstrate that we can dramatically tune the intersystem crossing (ISC) and the triplet state lifetime of porphyrin by changing the size of the QDs in the nanoassembly. © 2015 The Royal Society of Chemistry.
Quantum Dots and Their Multimodal Applications: A Review
Directory of Open Access Journals (Sweden)
Paul H. Holloway
2010-03-01
Full Text Available Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence or electric field (electroluminescence. In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.
Bianucci, Pablo
Modern communications technology has encouraged an intimate connection between Semiconductor Physics and Optics, and this connection shows best in the combination of electron-confining structures with light-confining structures. Semiconductor quantum dots are systems engineered to trap electrons in a mesoscopic scale (the are composed of ≈ 10000 atoms), resulting in a behavior resembling that of atoms, but much richer. Optical microresonators are engineered to confine light, increasing its intensity and enabling a much stronger interaction with matter. Their combination opens a myriad of new directions, both in fundamental Physics and in possible applications. This dissertation explores both semiconductor quantum dots and microresonators, through experimental work done with semiconductor quantum dots and microsphere resonators spanning the fields of Quantum Optics, Quantum Information and Photonics; from quantum algorithms to polarization converters. Quantum Optics leads the way, allowing us to understand how to manipulate and measure quantum dots with light and to elucidate the interactions between them and microresonators. In the Quantum Information area, we present a detailed study of the feasibility of excitons in quantum dots to perform quantum computations, including an experimental demonstration of the single-qubit Deutsch-Jozsa algorithm performedin a single semiconductor quantum dot. Our studies in Photonics involve applications of microsphere resonators, which we have learned to fabricate and characterize. We present an elaborate description of the experimental techniques needed to study microspheres, including studies and proof of concept experiments on both ultra-sensitive microsphere sensors and whispering gallery mode polarization converters.
Colloidal Double Quantum Dots.
Teitelboim, Ayelet; Meir, Noga; Kazes, Miri; Oron, Dan
2016-05-17
Pairs of coupled quantum dots with controlled coupling between the two potential wells serve as an extremely rich system, exhibiting a plethora of optical phenomena that do not exist in each of the isolated constituent dots. Over the past decade, coupled quantum systems have been under extensive study in the context of epitaxially grown quantum dots (QDs), but only a handful of examples have been reported with colloidal QDs. This is mostly due to the difficulties in controllably growing nanoparticles that encapsulate within them two dots separated by an energetic barrier via colloidal synthesis methods. Recent advances in colloidal synthesis methods have enabled the first clear demonstrations of colloidal double quantum dots and allowed for the first exploratory studies into their optical properties. Nevertheless, colloidal double QDs can offer an extended level of structural manipulation that allows not only for a broader range of materials to be used as compared with epitaxially grown counterparts but also for more complex control over the coupling mechanisms and coupling strength between two spatially separated quantum dots. The photophysics of these nanostructures is governed by the balance between two coupling mechanisms. The first is via dipole-dipole interactions between the two constituent components, leading to energy transfer between them. The second is associated with overlap of excited carrier wave functions, leading to charge transfer and multicarrier interactions between the two components. The magnitude of the coupling between the two subcomponents is determined by the detailed potential landscape within the nanocrystals (NCs). One of the hallmarks of double QDs is the observation of dual-color emission from a single nanoparticle, which allows for detailed spectroscopy of their properties down to the single particle level. Furthermore, rational design of the two coupled subsystems enables one to tune the emission statistics from single photon
Transport through Zero-Dimensional States in a Quantum Dot
Kouwenhoven, Leo P.; Wees, Bart J. van; Harmans, Kees J.P.M.; Williamson, John G.
1990-01-01
We have studied the electron transport through zero-dimensional (0D) states. 0D states are formed when one-dimensional edge channels are confined in a quantum dot. The quantum dot is defined in a two-dimensional electron gas with a split gate technique. To allow electronic transport, connection to
Single quantum dot nanowire photodetectors
Van Kouwen, M.P.; Van Weert, M.H.M.; Reimer, M.E.; Akopian, N.; Perinetti, U.; Algra, R.E.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.
2010-01-01
We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the line
Single quantum dot nanowire photodetectors
Van Kouwen, M.P.; Van Weert, M.H.M.; Reimer, M.E.; Akopian, N.; Perinetti, U.; Algra, R.E.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.
2010-01-01
We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the
Directory of Open Access Journals (Sweden)
Mohamed Henini
2002-06-01
These sophisticated technologies for the growth of high quality epitaxial layers of compound semiconductor materials on single crystal semiconductor substrates are becoming increasingly important for the development of the semiconductor electronics industry. This article is intended to convey the flavor of the subject by focusing on the technology and applications of self-assembled quantum dots (QDs and to give an introduction to some of the essential characteristics.
Quantum dots for quantum information technologies
2017-01-01
This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.
Pejova, Biljana
2014-05-01
Raman scattering in combination with optical spectroscopy and structural studies by X-ray diffraction was employed to investigate the phonon confinement and strain-induced effects in 3D assemblies of variable-size zincblende ZnSe quantum dots close packed in thin film form. Nanostructured thin films were synthesized by colloidal chemical approach, while tuning of the nanocrystal size was enabled by post-deposition thermal annealing treatment. In-depth insights into the factors governing the observed trends of the position and half-width of the 1LO band as a function of the average QD size were gained. The overall shifts in the position of 1LO band were found to result from an intricate compromise between the influence of phonon confinement and lattice strain-induced effects. Both contributions were quantitatively and exactly modeled. Accurate assignments of the bands due to surface optical (SO) modes as well as of the theoretically forbidden transverse optical (TO) modes were provided, on the basis of reliable physical models (such as the dielectric continuum model of Ruppin and Englman). The size-dependence of the ratio of intensities of the TO and LO modes was studied and discussed as well. Relaxation time characterizing the phonon decay processes in as-deposited samples was found to be approximately 0.38 ps, while upon post-deposition annealing already at 200 °C it increases to about 0.50 ps. Both of these values are, however, significantly smaller than those characteristic for a macrocrystalline ZnSe sample.
Blanton, Christopher J; Chakraborty, Arindam
2012-01-01
The effect of external electric field on electron-hole correlation in GaAs quantum dots is investigated. The electron-hole Schrodinger equation in the presence of external electric field is solved using explicitly correlated full configuration interaction (XCFCI) method and accurate exciton binding energy and electron-hole recombination probability are obtained. The effect of the electric field was included in the 1-particle single component basis functions by performing variational polaron transformation. The quality of the wavefunction at small inter-particle distances was improved by using Gaussian-type geminal function that depended explicitly on the electron-hole separation distance. The parameters of the explicitly correlated function were determined variationally at each field strength. The scaling of total exciton energy, exciton binding energy, and electron-hole recombination probability with respect to the strength of the electric field was investigated. It was found that a 500 kV/cm change in elect...
Hu, C Y
2017-03-28
The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic transistor that forms the basis of modern electronics. In sharp contrast to previous all-optical tran-sistors which are all based on optical nonlinearities, here I introduce a novel design for a high-gain and high-speed (up to terahertz) photonic transistor and its counterpart in the quantum limit, i.e., single-photon transistor based on a linear optical effect: giant Faraday rotation induced by a single electronic spin in a single-sided optical microcavity. A single-photon or classical optical pulse as the gate sets the spin state via projective measurement and controls the polarization of a strong light to open/block the photonic channel. Due to the duality as quantum gate for quantum information processing and transistor for optical information processing, this versatile spin-cavity quantum transistor provides a solid-state platform ideal for all-optical networks and quantum networks.
Hu, C. Y.
2017-01-01
The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic transistor that forms the basis of modern electronics. In sharp contrast to previous all-optical tran-sistors which are all based on optical nonlinearities, here I introduce a novel design for a high-gain and high-speed (up to terahertz) photonic transistor and its counterpart in the quantum limit, i.e., single-photon transistor based on a linear optical effect: giant Faraday rotation induced by a single electronic spin in a single-sided optical microcavity. A single-photon or classical optical pulse as the gate sets the spin state via projective measurement and controls the polarization of a strong light to open/block the photonic channel. Due to the duality as quantum gate for quantum information processing and transistor for optical information processing, this versatile spin-cavity quantum transistor provides a solid-state platform ideal for all-optical networks and quantum networks. PMID:28349960
Room-temperature dephasing in InAs/GaAs quantum dots
DEFF Research Database (Denmark)
Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Märcher;
1999-01-01
Summary form only given. Semiconductor quantum dots (QDs) are receiving increasing attention for fundamental studies on zero-dimensional confinement and for device applications. Quantum-dot lasers are expected to show superior performances, like high material gain, low and temperature...... stacked layers of InAs-InGaAs-GaAs quantum dots....
An Exciton Bound to a Neutral Donor in Quantum Dots
Institute of Scientific and Technical Information of China (English)
解文方
2002-01-01
The binding energies for an exciton (X) trapped in a two-dimensional quantum dot by a neutral donor have been calculated using the method of few-body physics for the heavy hole (σ= 0.196) and the light hole (σr = 0.707).We find that the (D0, X) complex confined in a quantum dot has in general a larger binding energy than those in a two-dimensional quantum well and a three-dimensional bulk semiconductor, and the binding energy increases with the decrease of the dot radius. At dot radius R →∞, we compare our calculated result with the previous results.
Single-photon superradiance from a quantum dot
DEFF Research Database (Denmark)
Tighineanu, Petru; Daveau, Raphaël Sura; Lehmann, Tau Bernstorff
2016-01-01
We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron...... temperature of our cryostat and may lead to oscillator strengths above 1000 from a single quantum emitter at optical frequencies....
Quantum dots for next-generation photovoltaics
Directory of Open Access Journals (Sweden)
Octavi E. Semonin
2012-11-01
Full Text Available Colloidal quantum-confined semiconductor nanostructures are an emerging class of functional material that are being developed for novel solar energy conversion strategies. One of the largest losses in a bulk or thin film solar cell occurs within a few picoseconds after the photon is absorbed, as photons with energy larger than the semiconductor bandgap produce charge-carriers with excess kinetic energy, which is then dissipated via phonon emission. Semiconductor nanostructures, where at least one dimension is small enough to produce quantum confinement effects, provide new pathways for controlling energy flow and therefore have the potential to increase the efficiency of the primary photoconversion step. In this review, we provide the current status of research efforts towards utilizing the unique properties of colloidal quantum dots (nanocrystals confined in three dimensions in prototype solar cells and demonstrate that these unique systems have the potential to bypass the Shockley-Queisser single-junction limit for solar photon conversion.
El-Ballouli, AlA'A O.
2014-05-14
Quantum dot (QD) solar cells have emerged as promising low-cost alternatives to existing photovoltaic technologies. Here, we investigate charge transfer and separation at PbS QDs and phenyl-C61-butyric acid methyl ester (PCBM) interfaces using a combination of femtosecond broadband transient absorption (TA) spectroscopy and steady-state photoluminescence quenching measurements. We analyzed ultrafast electron injection and charge separation at PbS QD/PCBM interfaces for four different QD sizes and as a function of PCBM concentration. The results reveal that the energy band alignment, tuned by the quantum size effect, is the key element for efficient electron injection and charge separation processes. More specifically, the steady-state and time-resolved data demonstrate that only small-sized PbS QDs with a bandgap larger than 1 eV can transfer electrons to PCBM upon light absorption. We show that these trends result from the formation of a type-II interface band alignment, as a consequence of the size distribution of the QDs. Transient absorption data indicate that electron injection from photoexcited PbS QDs to PCBM occurs within our temporal resolution of 120 fs for QDs with bandgaps that achieve type-II alignment, while virtually all signals observed in smaller bandgap QD samples result from large bandgap outliers in the size distribution. Taken together, our results clearly demonstrate that charge transfer rates at QD interfaces can be tuned by several orders of magnitude by engineering the QD size distribution. The work presented here will advance both the design and the understanding of QD interfaces for solar energy conversion. © 2014 American Chemical Society.
The pinning effect in quantum dots
Energy Technology Data Exchange (ETDEWEB)
Monisha, P. J., E-mail: pjmonisha@gmail.com [School of Physics, University of Hyderabad, Hyderabad-500046 (India); Mukhopadhyay, Soma [Department of Physics, D V R College of Engineering and Technology, Hyderabad-502285 (India)
2014-04-24
The pinning effect is studied in a Gaussian quantum dot using the improved Wigner-Brillouin perturbation theory (IWBPT) in the presence of electron-phonon interaction. The electron ground state plus one phonon state is degenerate with the electron in the first excited state. The electron-phonon interaction lifts the degeneracy and the first excited states get pinned to the ground state plus one phonon state as we increase the confinement frequency.
Quantum dots: Rethinking the electronics
Bishnoi, Dimple
2016-05-01
In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including "waste heat" from the sun's energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate band setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.
Quantum Confined Semiconductors for High Efficiency Photovoltaics
Beard, Matthew
2014-03-01
Semiconductor nanostructures, where at least one dimension is small enough to produce quantum confinement effects, provide new pathways for controlling energy flow and therefore have the potential to increase the efficiency of the primary photon-to-free energy conversion step. In this discussion, I will present the current status of research efforts towards utilizing the unique properties of colloidal quantum dots (NCs confined in three dimensions) in prototype solar cells and demonstrate that these unique systems have the potential to bypass the Shockley-Queisser single-junction limit for solar photon conversion. The solar cells are constructed using a low temperature solution based deposition of PbS or PbSe QDs as the absorber layer. Different chemical treatments of the QD layer are employed in order to obtain good electrical communication while maintaining the quantum-confined properties of the QDs. We have characterized the transport and carrier dynamics using a transient absorption, time-resolved THz, and temperature-dependent photoluminescence. I will discuss the interplay between carrier generation, recombination, and mobility within the QD layers. A unique aspect of our devices is that the QDs exhibit multiple exciton generation with an efficiency that is ~ 2 to 3 times greater than the parental bulk semiconductor.
An All-Optical Quantum Gate in a Semiconductor Quantum Dot
National Research Council Canada - National Science Library
Xiaoqin Li; Yanwen Wu; Duncan Steel; D. Gammon; T. H. Stievater; D. S. Katzer; D. Park; C. Piermarocchi; L. J. Sham
2003-01-01
We report coherent optical control of a biexciton (two electron-hole pairs), confined in a single quantum dot, that shows coherent oscillations similar to the excited-state Rabi flopping in an isolated atom...
Energy Technology Data Exchange (ETDEWEB)
Christina lily Jasmine, P. [Dept. of Physics, N.M.S. Sermathai Vasan College for Women, Madurai 625 012 (India); John Peter, A., E-mail: a.john.peter@gmail.com [P.G. and Research Dept. of Physics, Government Arts College, Melur, 625 106 Madurai (India); Lee, Chang Woo [Department of Chemical Engineering, College of Engineering, Kyung Hee University, 1732 Deogyeong-daero, Gihung, Yongin, Gyeonggi 446-701 (Korea, Republic of)
2015-05-01
Highlights: • Optical properties of a hydrogenic donor impurity in CdTe/Zn{sub 0.2}Cd{sub 0.8}Te/ZnTe core/shell/shell dot are discussed. • Two parametrical potential of Smorodinsky–Winternitz are considered in this problem. • The dielectric mismatch is included in the Hamiltonian. • The position dependent effective mass is applied. • The intersubband optical absorption, oscillator strength and radiative life time are studied. - Abstract: Electronic and optical properties of a hydrogenic donor impurity in a CdTe/Zn{sub 0.2}Cd{sub 0.8}Te/ZnTe core/shell/shell quantum dot are discussed taking into consideration of geometrical confinement effect. The confining potentials on both the sides of the barrier are different and a two parametrical potential of Smorodinsky–Winternitz is considered in this problem. The dielectric mismatch is included in the Hamiltonian. The position dependent effective mass is applied. The electronic properties are studied using variational method and the optical properties are investigated using the density matrix approach. The intersubband optical absorption, the oscillator strength and the radiative life time between ground and the excited states are studied based on the wave functions and the confined energies with and without the impurity with various dot radii. The results show that the absorption wavelength in type-II core and shell semiconducting nanomaterials can be tuned over a wider range of wavelengths by altering their size and the composition.
Quantum Confinement in Hydrogen Bond
Santos, Carlos da Silva dos; Ricotta, Regina Maria
2015-01-01
In this work, the quantum confinement effect is proposed as the cause of the displacement of the vibrational spectrum of molecular groups that involve hydrogen bonds. In this approach the hydrogen bond imposes a space barrier to hydrogen and constrains its oscillatory motion. We studied the vibrational transitions through the Morse potential, for the NH and OH molecular groups inside macromolecules in situation of confinement (when hydrogen bonding is formed) and non-confinement (when there is no hydrogen bonding). The energies were obtained through the variational method with the trial wave functions obtained from Supersymmetric Quantum Mechanics (SQM) formalism. The results indicate that it is possible to distinguish the emission peaks related to the existence of the hydrogen bonds. These analytical results were satisfactorily compared with experimental results obtained from infrared spectroscopy.
CORRELATIONS IN CONFINED QUANTUM PLASMAS
Energy Technology Data Exchange (ETDEWEB)
DUFTY J W
2012-01-11
This is the final report for the project 'Correlations in Confined Quantum Plasmas', NSF-DOE Partnership Grant DE FG02 07ER54946, 8/1/2007 - 7/30/2010. The research was performed in collaboration with a group at Christian Albrechts University (CAU), Kiel, Germany. That collaboration, almost 15 years old, was formalized during the past four years under this NSF-DOE Partnership Grant to support graduate students at the two institutions and to facilitate frequent exchange visits. The research was focused on exploring the frontiers of charged particle physics evolving from new experimental access to unusual states associated with confinement. Particular attention was paid to combined effects of quantum mechanics and confinement. A suite of analytical and numerical tools tailored to the specific inquiry has been developed and employed
Three-Electron Quantum Dots in Zero Magnetic Field
Institute of Scientific and Technical Information of China (English)
无
2007-01-01
By using the exact diagonalization method, a system of three electrons confined in a parabolic quantum dot in zero magnetic field is studied. The ground-state electronic structures and orbital and spin angular momenta transitions as a function of the confined strength are investigated. We find that the confinement may cause accidental degeneracies between levels with different low-lying states and the inversion of the energy values. The present results are useful to understanding the optical properties and internal electron-electron correlations of quantum dot materials.
Light emission from Si quantum dots
Directory of Open Access Journals (Sweden)
Philippe M. Fauchet
2005-01-01
Full Text Available Si quantum dots (QDs as small as ∼2 nm in diameter have been synthesized by a variety of techniques. Because of quantum confinement and the elimination of bulk or surface defects, these dots can emit light from the near infrared throughout the visible with quantum efficiencies in excess of 10%. The luminescence wavelength range has been extended to longer wavelengths by the addition of light-emitting rare earths such as erbium (Er. Light-emitting devices (LEDs have been fabricated and their performances are starting to approach those of direct band gap semiconductor or organic LEDs. A search for a Si QD-based laser is even under way. The state-of-the-art in the materials science, physics, and device development of luminescent Si QDs is reviewed and areas of future research are pointed out.
Quantum dots as biophotonics tools.
Cesar, Carlos L
2014-01-01
This chapter provides a short review of quantum dots (QDs) physics, applications, and perspectives. The main advantage of QDs over bulk semiconductors is the fact that the size became a control parameter to tailor the optical properties of new materials. Size changes the confinement energy which alters the optical properties of the material, such as absorption, refractive index, and emission bands. Therefore, by using QDs one can make several kinds of optical devices. One of these devices transforms electrons into photons to apply them as active optical components in illumination and displays. Other devices enable the transformation of photons into electrons to produce QDs solar cells or photodetectors. At the biomedical interface, the application of QDs, which is the most important aspect in this book, is based on fluorescence, which essentially transforms photons into photons of different wavelengths. This chapter introduces important parameters for QDs' biophotonic applications such as photostability, excitation and emission profiles, and quantum efficiency. We also present the perspectives for the use of QDs in fluorescence lifetime imaging (FLIM) and Förster resonance energy transfer (FRET), so useful in modern microscopy, and how to take advantage of the usually unwanted blinking effect to perform super-resolution microscopy.
Barroso, Margarida M
2011-03-01
Quantum dots are semiconductor nanocrystals that have broad excitation spectra, narrow emission spectra, tunable emission peaks, long fluorescence lifetimes, negligible photobleaching, and ability to be conjugated to proteins, making them excellent probes for bioimaging applications. Here the author reviews the advantages and disadvantages of using quantum dots in bioimaging applications, such as single-particle tracking and fluorescence resonance energy transfer, to study receptor-mediated transport.
Hydrophobin-Encapsulated Quantum Dots.
Taniguchi, Shohei; Sandiford, Lydia; Cooper, Maggie; Rosca, Elena V; Ahmad Khanbeigi, Raha; Fairclough, Simon M; Thanou, Maya; Dailey, Lea Ann; Wohlleben, Wendel; von Vacano, Bernhard; de Rosales, Rafael T M; Dobson, Peter J; Owen, Dylan M; Green, Mark
2016-02-01
The phase transfer of quantum dots to water is an important aspect of preparing nanomaterials that are suitable for biological applications, and although numerous reports describe ligand exchange, very few describe efficient ligand encapsulation techniques. In this report, we not only report a new method of phase transferring quantum dots (QDs) using an amphiphilic protein (hydrophobin) but also describe the advantages of using a biological molecule with available functional groups and their use in imaging cancer cells in vivo and other imaging applications.
Barroso, Margarida M.
2011-01-01
Quantum dots are semiconductor nanocrystals that have broad excitation spectra, narrow emission spectra, tunable emission peaks, long fluorescence lifetimes, negligible photobleaching, and ability to be conjugated to proteins, making them excellent probes for bioimaging applications. Here the author reviews the advantages and disadvantages of using quantum dots in bioimaging applications, such as single-particle tracking and fluorescence resonance energy transfer, to study receptor-mediated t...
Analysis of single quantum-dot mobility inside 1D nanochannel devices.
Hoang, H.T.; Segers-Nolten, I.M.; Tas, N.R.; Honschoten, J.W. van; Subramaniam, V.; Elwenspoek, M.C.
2011-01-01
We visualized individual quantum dots using a combination of a confining nanochannel and an ultra-sensitive microscope system, equipped with a high numerical aperture lens and a highly sensitive camera. The diffusion coefficients of the confined quantum dots were determined from the experimentally r
Analysis of single quantum-dot mobility inside 1D nanochannel devices
Hoang Thi Hanh, H.T.H.; Segers-Nolten, Gezina M.J.; Tas, Niels Roelof; van Honschoten, J.W.; Subramaniam, Vinod; Elwenspoek, Michael Curt
2011-01-01
We visualized individual quantum dots using a combination of a confining nanochannel and an ultra-sensitive microscope system, equipped with a high numerical aperture lens and a highly sensitive camera. The diffusion coefficients of the confined quantum dots were determined from the experimentally r
Spin Wigner molecules in quantum dots
Zutic, Igor; Oszwaldowski, Rafal; Stano, Peter; Petukhov, A. G.
2013-03-01
The interplay of confinement and Coulomb interactions in quantum dots can lead to strongly correlated phases differing qualitatively from the Fermi liquid behavior. While in three dimensions the correlation-induced Wigner crystal is elusive and expected only in the limit of an extremely low carrier density, its nanoscale analog, the Wigner molecule, has been observed in quantum dots at much higher densities [1]. We explore how the presence of magnetic impurities in quantum dots can provide additional opportunities to study correlation effects and the resulting ordering in carrier and impurity spins[2]. By employing exact diagonalization we reveal that seemingly simple two-carrier quantum dots lead to a rich phase diagram [2,3]. We propose experiments to verify our predictions; in particular, we discuss interband optical transitions as a function of temperature and magnetic field. DOE-BES, meta-QUTE 259 ITMS NFP Grant No. 26240120022, CE SAS QUTE, EU 260 Project Q-essence, Grant No. APVV-0646-10, and SCIEX.
Colloidal quantum dot photodetectors
Konstantatos, Gerasimos
2011-05-01
We review recent progress in light sensors based on solution-processed materials. Spin-coated semiconductors can readily be integrated with many substrates including as a post-process atop CMOS silicon and flexible electronics. We focus in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D values above 1013 Jones, while fully-depleted photodiodes based on these same materials have achieved MHz response combined with 1012 Jones sensitivities. We discuss the nanoparticle synthesis, the materials processing, integrability, temperature stability, physical operation, and applied performance of this class of devices. © 2010 Elsevier Ltd. All rights reserved.
Second Bound State of Biexcitons in Quantum Dots
Institute of Scientific and Technical Information of China (English)
XIE Wen-Eang
2003-01-01
The second bound state of the biexcitons in a quantum dot, with orbital angular momentum L = 1, is reported. By using the method of few-body physics, the binding energy spectra of the second bound state of a biexciton in a GaAs quantum dot with a parabolic confinement have been calculated as a function of the electron-to-hole mass ratio and the quantum dot size. The fact that the biexcitons have a second bound state may aid in the better understanding of their binding mechanism.
A Nanowire-Based Plasmonic Quantum Dot Laser.
Ho, Jinfa; Tatebayashi, Jun; Sergent, Sylvain; Fong, Chee Fai; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko
2016-04-13
Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.
Gerard, Valerie; Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii K.
2015-10-01
The main goal of our research is to develop new types of technologically important optically active quantum dot (QD) based materials, study their properties and explore their biological applications. For the first time chiral II-VI QDs have been prepared by us using microwave induced heating with the racemic (Rac), D- and L-enantiomeric forms of penicillamine as stabilisers. Circular dichroism (CD) studies of these QDs have shown that D- and L-penicillamine stabilised particles produced mirror image CD spectra, while the particles prepared with a Rac mixture showed only a weak signal. It was also demonstrated that these QDs show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. These QDs have demonstrated highly specific chiral recognition of various biological species including aminoacids. The utilisation of chiral stabilisers also allowed the preparation of new water soluble white emitting CdS nano-tetrapods, which demonstrated circular dichroism in the band-edge region of the spectrum. Biological testing of chiral CdS nanotetrapods displayed a chiral bias for an uptake of the D- penicillamine stabilised nano-tetrapods by cancer cells. It is expected that this research will open new horizons in the chemistry of chiral nanomaterials and their application in nanobiotechnology, medicine and optical chemo- and bio-sensing.
Christina lily Jasmine, P.; John Peter, A.; Lee, Chang Woo
2015-05-01
Electronic and optical properties of a hydrogenic donor impurity in a CdTe/Zn0.2Cd0.8Te/ZnTe core/shell/shell quantum dot are discussed taking into consideration of geometrical confinement effect. The confining potentials on both the sides of the barrier are different and a two parametrical potential of Smorodinsky-Winternitz is considered in this problem. The dielectric mismatch is included in the Hamiltonian. The position dependent effective mass is applied. The electronic properties are studied using variational method and the optical properties are investigated using the density matrix approach. The intersubband optical absorption, the oscillator strength and the radiative life time between ground and the excited states are studied based on the wave functions and the confined energies with and without the impurity with various dot radii. The results show that the absorption wavelength in type-II core and shell semiconducting nanomaterials can be tuned over a wider range of wavelengths by altering their size and the composition.
Templated self-assembly of SiGe quantum dots
Energy Technology Data Exchange (ETDEWEB)
Dais, Christian
2009-08-19
-dimensional quantum dot crystals. The analyzed SiGe quantum dots have a type II band alignment, with holes confined in the dots and electrons confined in the strained Si in the surrounding of the dots. The recombination energy of these indirect excitons depends on size, Ge content and strain distribution of the quantum dots. It is shown that the structural uniformity of the created quantum dot structures is reflected in their optical properties, resulting in a narrow and stable photoluminescence emission with well separated no-phonon and transversal optical phonon lines. The narrow dot luminescence can be shifted by varying Ge coverage, dot size or dot period. Furthermore excitation-power dependent and temperature dependent photoluminescence measurements are discussed. Band structure calculations indicate that the electronic states of the quantum dot crystals are electronically coupled at least in vertical direction. For the quantum dot crystal with a lateral period of 35 nm even a coupling in all three dimensions is calculated. Thus, the three-dimensional dot arrangement represents not only from the structural but also from the electronic point of view an artificial crystal. (orig.)
Probing relaxation times in graphene quantum dots
Volk, Christian; Neumann, Christoph; Kazarski, Sebastian; Fringes, Stefan; Engels, Stephan; Haupt, Federica; Müller, André; Stampfer, Christoph
2013-01-01
Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coherence times. Graphene quantum dots have been extensively investigated with respect to their excitation spectrum, spin-filling sequence and electron-hole crossover. However, their relaxation dynamics remain largely unexplored. This is mainly due to challenges in device fabrication, in particular concerning the control of carrier confinement and the tunability of the tunnelling barriers, both crucial to experimentally investigate decoherence times. Here we report pulsed-gate transient current spectroscopy and relaxation time measurements of excited states in graphene quantum dots. This is achieved by an advanced device design that allows to individually tune the tunnelling barriers down to the low megahertz regime, while monitoring their asymmetry. Measuring transient currents through electronic excited states, we estimate a lower bound for charge relaxation times on the order of 60–100 ns. PMID:23612294
Energy Technology Data Exchange (ETDEWEB)
Corfdir, P., E-mail: corfdir@pdi-berlin.de; Van Hattem, B.; Phillips, R. T. [Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Fontana, Y.; Russo-Averchi, E.; Heiss, M.; Fontcuberta i Morral, A. [Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, École Polytechnique Fédérale de Lausanne, 1015 Lausanne (Switzerland)
2014-12-01
We study the neutral exciton (X) and charged exciton (CX) transitions from (Al,Ga)As shell quantum dots located in core-shell nanowires, in the presence of a magnetic field. The g-factors and the diamagnetic coefficients of both the X and the CX depend on the orientation of the field with respect to the nanowire axis. The aspect ratio of the X wavefunction is quantified based on the anisotropy of the diamagnetic coefficient. For specific orientations of the magnetic field, it is possible to cancel the g-factor of the bright states of the X and the CX by means of an inversion of the sign of the hole's g-factor, which is promising for quantum information processing applications.
Suzuki, Nozomu; Wang, Yichun; Elvati, Paolo; Qu, Zhi-Bei; Kim, Kyoungwon; Jiang, Shuang; Baumeister, Elizabeth; Lee, Jaewook; Yeom, Bongjun; Bahng, Joong Hwan; Lee, Jaebeom; Violi, Angela; Kotov, Nicholas A
2016-02-23
Chiral nanostructures from metals and semiconductors attract wide interest as components for polarization-enabled optoelectronic devices. Similarly to other fields of nanotechnology, graphene-based materials can greatly enrich physical and chemical phenomena associated with optical and electronic properties of chiral nanostructures and facilitate their applications in biology as well as other areas. Here, we report that covalent attachment of l/d-cysteine moieties to the edges of graphene quantum dots (GQDs) leads to their helical buckling due to chiral interactions at the "crowded" edges. Circular dichroism (CD) spectra of the GQDs revealed bands at ca. 210-220 and 250-265 nm that changed their signs for different chirality of the cysteine edge ligands. The high-energy chiroptical peaks at 210-220 nm correspond to the hybridized molecular orbitals involving the chiral center of amino acids and atoms of graphene edges. Diverse experimental and modeling data, including density functional theory calculations of CD spectra with probabilistic distribution of GQD isomers, indicate that the band at 250-265 nm originates from the three-dimensional twisting of the graphene sheet and can be attributed to the chiral excitonic transitions. The positive and negative low-energy CD bands correspond to the left and right helicity of GQDs, respectively. Exposure of liver HepG2 cells to L/D-GQDs reveals their general biocompatibility and a noticeable difference in the toxicity of the stereoisomers. Molecular dynamics simulations demonstrated that d-GQDs have a stronger tendency to accumulate within the cellular membrane than L-GQDs. Emergence of nanoscale chirality in GQDs decorated with biomolecules is expected to be a general stereochemical phenomenon for flexible sheets of nanomaterials.
Mesoscopic Cavity Quantum Electrodynamics with Quantum Dots
Childress, L I; Lukin, M D
2003-01-01
We describe an electrodynamic mechanism for coherent, quantum mechanical coupling between spacially separated quantum dots on a microchip. The technique is based on capacitive interactions between the electron charge and a superconducting transmission line resonator, and is closely related to atomic cavity quantum electrodynamics. We investigate several potential applications of this technique which have varying degrees of complexity. In particular, we demonstrate that this mechanism allows design and investigation of an on-chip double-dot microscopic maser. Moreover, the interaction may be extended to couple spatially separated electron spin states while only virtually populating fast-decaying superpositions of charge states. This represents an effective, controllable long-range interaction, which may facilitate implementation of quantum information processing with electron spin qubits and potentially allow coupling to other quantum systems such as atomic or superconducting qubits.
Effect of the Electron-LO-Phonon Coupling on an Exciton Quantum Dot
Institute of Scientific and Technical Information of China (English)
XIE Wen-Fang; ZHU Wu
2002-01-01
The influence of the electron-LO-phonon coupling on energy spectrum of the low-lying states ofan exciton inparabolic quantum dots is investigated as a function of dot size. Calculations are made by using the method of few-bodyphysics within the effective-mass approximation. A considerable decrease of the energy in the stronger confinement rangeis found for the low-lying states of an exciton in quantum dots, which results from the confinement of electron-phononcoupling.
Room temperature photoluminescence of InGaAs Surface Quantum Dots
Ulloa Herrero, José María; Yamamoto, K.; Fernández González, Alvaro de Guzmán; Hierro Cano, Adrián
2011-01-01
Self-assembled InGaAs quantum dots show unique physical properties such as three dimensional confinement, high size homogeneity, high density and low number of dislocations. They have been extensively used in the active regions of laser devices for optical communications applications [1]. Therefore, buried quantum dots (BQDs) embedded in wider band gap materials have been normally studied. The wave confinement in all directions and the stress field around the dot affect both optical and elect...
Quantum-dot emitters in photonic nanostructures
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Stobbe, Søren; Lodahl, Peter
2010-01-01
The spontaneous emission from self-assembled semiconductor quantum dots is strongly influenced by the environment in which they are placed. This can be used to determine fundamental optical properties of the quantum dots as well as to manipulate and control the quantum-dot emission itself....
Beer's law in semiconductor quantum dots
Adamashvili, G T
2010-01-01
The propagation of a coherent optical linear wave in an ensemble of semiconductor quantum dots is considered. It is shown that a distribution of transition dipole moments of the quantum dots changes significantly the polarization and Beer's absorption length of the ensemble of quantum dots. Explicit analytical expressions for these quantities are presented.
Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures
Malins, David B
2007-01-01
The quantum confined Stark effect (QCSE) and ultrafast absorption dynamics near the bandedge have been investigated in p-i-n waveguides comprising quantum confined heterostructures grown on GaAs substrates, for emission at 1.3um. The materials are; isolated InAs/InGaAs dot-in-a-well (DWELL) quantum dots (QD), bilayer InAs quantum dots and GaInNAs multiple quantum wells (MQW). The focus was to investigate these dynamics in a planar waveguide geometry, for the purpose of large scale integ...
Nanoscale quantum-dot supercrystals
Baimuratov, Anvar S.; Turkov, Vadim K.; Rukhlenko, Ivan D.; Baranov, Alexander V.; Fedorov, Anatoly V.
2013-09-01
We develop a theory allowing one to calculate the energy spectra and wave functions of collective excitations in twoand three-dimensional quantum-dot supercrystals. We derive analytical expressions for the energy spectra of twodimensional supercrystals with different Bravias lattices, and use them to analyze the possibility of engineering the supercrystals' band structure. We demonstrate that the variation of the supercrystal's parameters (such as the symmetry of the periodic lattice and the properties of the quantum dots or their environment) enables an unprecedented control over its optical properties, thus paving a way towards the development of new nanophotonics materials.
Berry phase jumps and giant nonreciprocity in Dirac quantum dots
Rodriguez-Nieva, Joaquin F.; Levitov, Leonid S.
2016-12-01
We predict that a strong nonreciprocity in the resonance spectra of Dirac quantum dots can be induced by the Berry phase. The nonreciprocity arises in relatively weak magnetic fields and is manifest in anomalously large field-induced splittings of quantum dot resonances which are degenerate at B =0 due to time-reversal symmetry. This exotic behavior, which is governed by field-induced jumps in the Berry phase of confined electronic states, is unique to quantum dots in Dirac materials and is absent in conventional quantum dots. The effect is strong for gapless Dirac particles and can overwhelm the B -induced orbital and Zeeman splittings. A finite Dirac mass suppresses the effect. The nonreciprocity, predicted for generic two-dimensional Dirac materials, is accessible through Faraday and Kerr optical rotation measurements and scanning tunneling spectroscopy.
Probing of Unembedded Metallic Quantum Dots with Positrons
Energy Technology Data Exchange (ETDEWEB)
Fischer, C G; Denison, A B; Weber, M H; Wilcoxon, J P; Woessner, S; Lynn, K G
2003-08-01
We employed the two detector coincident Doppler Broadening Technique (coPAS) to investigate Ag, Au and Ag/Au alloy quantum dots of varying sizes which were deposited in thin layers on glass slides. The Ag quantum dots range from 2 to 3 nm in diameter, while the Ag/Au alloy quantum dots exhibit Ag cores of 2 nm and 3 nm and Au shells of varying thickness. We investigate the possibility of positron confinement in the Ag core due to positron affinity differences between Ag and Au. We describe the results and their significance to resolving the issue of whether positrons annihilate within the quantum dot itself or whether surface and positron escape effects play an important role.
Photoconductive gain and quantum efficiency of remotely doped Ge/Si quantum dot photodetectors
Yakimov, A. I.; Kirienko, V. V.; Armbrister, V. A.; Bloshkin, A. A.; Dvurechenskii, A. V.; Shklyaev, A. A.
2016-10-01
We study the effect of quantum dot charging on the mid-infrared photocurrent, optical gain, hole capture probability, and absorption quantum efficiency in remotely delta-doped Ge/Si quantum dot photodetectors. The dot occupation with holes is controlled by varying dot and doping densities. From our investigations of samples doped to contain from about one to nine holes per dot we observe an over 10 times gain enhancement and similar suppression of the hole capture probability with increased carrier population. The data are explained by quenching the capture process and increasing the photoexcited hole lifetime due to formation of the repulsive Coulomb potential of the extra holes inside the quantum dots. The normal incidence quantum efficiency is found to be strongly asymmetric with respect to applied bias polarity. Based on the polarization-dependent absorption measurements it is concluded that, at a positive voltage, when holes move toward the nearest δ-doping plane, photocurrent is originated from the bound-to-continuum transitions of holes between the ground state confined in Ge dots and the extended states of the Si matrix. At a negative bias polarity, the photoresponse is caused by optical excitation to a quasibound state confined near the valence band edge with subsequent tunneling to the Si valence band. In a latter case, the possibility of hole transfer into continuum states arises from the electric field generated by charge distributed between quantum dots and delta-doping planes.
Spin storage in quantum dot ensembles and single quantum dots
Energy Technology Data Exchange (ETDEWEB)
Heiss, Dominik
2009-10-15
This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h
Erlingsson, S.I.
2003-01-01
The main theme of this thesis is the hyperfine interaction between the many lattice nuclear spins and electron spins localized in GaAs quantum dots. This interaction is an intrinsic property of the material. Despite the fact that this interaction is rather weak, it can, as shown in this thesis, stro
Colloidal quantum dot solar cells
Sargent, Edward H.
2012-03-01
Solar cells based on solution-processed semiconductor nanoparticles -- colloidal quantum dots -- have seen rapid advances in recent years. By offering full-spectrum solar harvesting, these cells are poised to address the urgent need for low-cost, high-efficiency photovoltaics.
Tomczak, Nikodem; Liu, Rongrong; Vancso, Julius G.
2013-01-01
Quantum Dots (QDs) are semiconductor nanocrystals with distinct photophysical properties finding applications in biology, biosensing, and optoelectronics. Polymeric coatings of QDs are used primarily to provide long-term colloidal stability to QDs dispersed in solutions and also as a source of addit
Excitons in quantum-dot quantum-well nanoparticles
Institute of Scientific and Technical Information of China (English)
史俊杰
2002-01-01
A variational calculation is presented for the ground-state properties of excitons confined in spherical core-shell quantum-dot quantum-well (QDQW) nanoparticles. The relationship between the exciton states and structure parameters of QDQW nanoparticles is investigated, in which both the heavy-hole and the light-hole exciton states are considered. The results show that the confinement energies of the electron and hole states and the exciton binding energies depend sensitively on the well width and core radius of the QDQW structure. A detailed comparison between the heavy-hole and light-hole exciton states is given. Excellent agreement is found between experimental results and our calculated 1se-1sh transition energies.
Single-Photon Superradiance from a Quantum Dot
Tighineanu, Petru; Daveau, Raphaël S.; Lehmann, Tau B.; Beere, Harvey E.; Ritchie, David A.; Lodahl, Peter; Stobbe, Søren
2016-04-01
We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron and the hole comprising the exciton gives rise to an anharmonic spectrum, which we exploit to prepare the superradiant quantum state deterministically with a laser pulse. We observe a fivefold enhancement of the oscillator strength compared to conventional quantum dots. The enhancement is limited by the base temperature of our cryostat and may lead to oscillator strengths above 1000 from a single quantum emitter at optical frequencies.
Coherent control of quantum dots
DEFF Research Database (Denmark)
Johansen, Jeppe; Lodahl, Peter; Hvam, Jørn Märcher
In recent years much effort has been devoted to the use of semiconductor quantum dotsystems as building blocks for solid-state-based quantum logic devices. One importantparameter for such devices is the coherence time, which determines the number ofpossible quantum operations. From earlier...... measurements the coherence time of the selfassembledquantum dots (QDs) has been reported to be limited by the spontaneousemission rate at cryogenic temperatures1.In this project we propose to alter the coherence time of QDs by taking advantage of arecent technique on modifying spontaneous emission rates...
Semiconductor double quantum dot micromaser.
Liu, Y-Y; Stehlik, J; Eichler, C; Gullans, M J; Taylor, J M; Petta, J R
2015-01-16
The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum coherent phenomena, from terahertz sources to quantum communication. Here we demonstrate a maser that is driven by single-electron tunneling events. Semiconductor double quantum dots (DQDs) serve as a gain medium and are placed inside a high-quality factor microwave cavity. We verify maser action by comparing the statistics of the emitted microwave field above and below the maser threshold. Copyright © 2015, American Association for the Advancement of Science.
Coherent control of quantum dots
DEFF Research Database (Denmark)
Johansen, Jeppe; Lodahl, Peter; Hvam, Jørn Märcher
In recent years much effort has been devoted to the use of semiconductor quantum dotsystems as building blocks for solid-state-based quantum logic devices. One importantparameter for such devices is the coherence time, which determines the number ofpossible quantum operations. From earlier...... measurements the coherence time of the selfassembledquantum dots (QDs) has been reported to be limited by the spontaneousemission rate at cryogenic temperatures1.In this project we propose to alter the coherence time of QDs by taking advantage of arecent technique on modifying spontaneous emission rates...
Brightness-equalized quantum dots
Lim, Sung Jun; Zahid, Mohammad U.; Le, Phuong; Ma, Liang; Entenberg, David; Harney, Allison S.; Condeelis, John; Smith, Andrew M.
2015-10-01
As molecular labels for cells and tissues, fluorescent probes have shaped our understanding of biological structures and processes. However, their capacity for quantitative analysis is limited because photon emission rates from multicolour fluorophores are dissimilar, unstable and often unpredictable, which obscures correlations between measured fluorescence and molecular concentration. Here we introduce a new class of light-emitting quantum dots with tunable and equalized fluorescence brightness across a broad range of colours. The key feature is independent tunability of emission wavelength, extinction coefficient and quantum yield through distinct structural domains in the nanocrystal. Precise tuning eliminates a 100-fold red-to-green brightness mismatch of size-tuned quantum dots at the ensemble and single-particle levels, which substantially improves quantitative imaging accuracy in biological tissue. We anticipate that these materials engineering principles will vastly expand the optical engineering landscape of fluorescent probes, facilitate quantitative multicolour imaging in living tissue and improve colour tuning in light-emitting devices.
Einstein's Photoemission from Quantum Confined Superlattices.
Debbarma, S; Ghatak, K P
2016-01-01
This paper is dedicated to the 83th Birthday of Late Professor B. R. Nag, D.Sc., formerly Head of the Departments of Radio Physics and Electronics and Electronic Science of the University of Calcutta, a firm believer of the concept of theoretical minimum of Landau and an internationally well known semiconductor physicist, to whom the second author remains ever grateful as a student and research worker from 1974-2004. In this paper, an attempt is made to study, the Einstein's photoemission (EP) from III-V, II-VI, IV-VI, HgTe/CdTe and strained layer quantum well heavily doped superlattices (QWHDSLs) with graded interfaces in the presence of quantizing magnetic field on the basis of newly formulated electron dispersion relations within the frame work of k · p formalism. The EP from III-V, II-VI, IV-VI, HgTe/CdTe and strained layer quantum wells of heavily doped effective mass superlattices respectively has been presented under magnetic quantization. Besides the said emissions, from the quantum dots of the aforementioned heavily doped SLs have further investigated for the purpose of comparison and complete investigation in the context of EP from quantum confined superlattices. Using appropriate SLs, it appears that the EP increases with increasing surface electron concentration and decreasing film thickness in spiky manners, which are the characteristic features of such quantized hetero structures. Under magnetic quantization, the EP oscillates with inverse quantizing magnetic field due to Shuvnikov-de Haas effect. The EP increases with increasing photo energy in a step-like manner and the numerical values of EP with all the physical variables are totally band structure dependent for all the cases. The most striking features are that the presence of poles in the dispersion relation of the materials in the absence of band tails create the complex energy spectra in the corresponding HD constituent materials of such quantum confined superlattices and effective electron
Colloidal quantum dots: synthesis, properties and applications
Brichkin, S. B.; Razumov, V. F.
2016-12-01
Key recent results obtained in studies of a new class of luminophores, colloidal quantum dots, are analyzed. Modern methods for the synthesis and post-synthetic treatment of colloidal quantum dots that make it possible to achieve record high quantum yield of luminescence and to modify their characteristics for specific applications are considered. Currently important avenues of research on colloidal quantum dots and the problems in and prospects for their practical applications in various fields are discussed. The bibliography includes 272 references.
Quantum Computer Using Coupled Quantum Dot Molecules
Wu, N J; Natori, A; Yasunaga, H; Wu*, Nan-Jian
1999-01-01
We propose a method for implementation of a quantum computer using artificial molecules. The artificial molecule consists of two coupled quantum dots stacked along z direction and one single electron. One-qubit and two-qubit gates are constructed by one molecule and two coupled molecules, respectively.The ground state and the first excited state of the molecule are used to encode the |0> and |1> states of a qubit. The qubit is manipulated by a resonant electromagnetic wave that is applied directly to the qubit through a microstrip line. The coupling between two qubits in a quantum controlled NOT gate is switched on (off) by floating (grounding) the metal film electrodes. We study the operations of the gates by using a box-shaped quantum dot model and numerically solving a time-dependent Schridinger equation, and demonstrate that the quantum gates can perform the quantum computation. The operating speed of the gates is about one operation per 4ps. The reading operation of the output of the quantum computer can...
Quantum Dots Based Rad-Hard Computing and Sensors
Fijany, A.; Klimeck, G.; Leon, R.; Qiu, Y.; Toomarian, N.
2001-01-01
Quantum Dots (QDs) are solid-state structures made of semiconductors or metals that confine a small number of electrons into a small space. The confinement of electrons is achieved by the placement of some insulating material(s) around a central, well-conducting region. Thus, they can be viewed as artificial atoms. They therefore represent the ultimate limit of the semiconductor device scaling. Additional information is contained in the original extended abstract.
Electronic structure of rectangular HgTe quantum dots
Li, Jian; Zhang, Dong; Zhu, Jia-Ji
2017-09-01
We theoretically investigate the single- and few-electron ground-states properties of HgTe topological insulator quantum dots with rectangular hard-wall confining potential using configuration interaction method. For the case of single electron, the edge states is robust against the deformation from a square quantum dot to a rectangular ones, in contrast to the bulk states, the energy gap of the QDs increased due to the coupling of the opposite edge states; for the case of few electrons, the electrons first fill the edge states in the bulk band gap and the addition energy exhibit universal even-odd oscillation due to the shape-independent two-fold degeneracy of the edge states. The size of this edge shell can be controlled by tuning the dot size, shape or the bulk band gap via lateral or vertical electric gating respectively of the HgTe quantum dot.
Electric properties of Ge quantum dot embedded in Si matrix
Institute of Scientific and Technical Information of China (English)
MA Xi-ying; SHI Wei-lin
2005-01-01
The electric characteristics of Ge quantum dot grown by molecular beam epitaxy in Si matrix were investigated by admittance spectroscopy and deep level transient spectroscopy. The admittance spectroscopy measurements show that the activation energy of 0.341 eV can be considered as the emitting energy of hole from the ground state of the quantum dot. And the capacitance variation with temperature of the sample shows a platform at various frequencies with reverse bias 0.5 V, which indicates that the boundary of space charge region is located at the quantum dot layer where the large confined hole concentration blocks the further extension of space charge region. When the temperature increases from 120 K to 200 K, the holes in the dot emit out completely. The position of the platform shifting with the increase of the applied frequency shows the frequency effects of the charges in the quantum dot. The deep level transient spectroscopy results show that the charge concentration in the Ge quantum dot is a function of the pulse duration and the reverse bias voltage, the activation energy and capture cross-section of hole decrease with the increase of pulse duration due to the Coulomb charging effect. The valence-band offsets of hole in Ge dot obtained by admittance spectroscopy and deep level transient spectroscopy are 0.341 and 0.338 eV, respectively.
Thermoelectric energy harvesting with quantum dots.
Sothmann, Björn; Sánchez, Rafael; Jordan, Andrew N
2015-01-21
We review recent theoretical work on thermoelectric energy harvesting in multi-terminal quantum-dot setups. We first discuss several examples of nanoscale heat engines based on Coulomb-coupled conductors. In particular, we focus on quantum dots in the Coulomb-blockade regime, chaotic cavities and resonant tunneling through quantum dots and wells. We then turn toward quantum-dot heat engines that are driven by bosonic degrees of freedom such as phonons, magnons and microwave photons. These systems provide interesting connections to spin caloritronics and circuit quantum electrodynamics.
Spin-orbit effects in carbon-nanotube double quantum dots
DEFF Research Database (Denmark)
Weiss, S; Rashba, E I; Kuemmeth, Ferdinand;
2010-01-01
We study the energy spectrum of symmetric double quantum dots in narrow-gap carbon nanotubes with one and two electrostatically confined electrons in the presence of spin-orbit and Coulomb interactions. Compared to GaAs quantum dots, the spectrum exhibits a much richer structure because of the sp...
Semiconductor quantum dot-sensitized solar cells.
Tian, Jianjun; Cao, Guozhong
2013-10-31
Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.
Semiconductor quantum dot-sensitized solar cells
Directory of Open Access Journals (Sweden)
Jianjun Tian
2013-10-01
Full Text Available Semiconductor quantum dots (QDs have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1 the effect of quantum confinement on QDSCs, 2 the multiple exciton generation (MEG of QDs, 3 fabrication methods of QDs, and 4 nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.
Electron states in semiconductor quantum dots
Energy Technology Data Exchange (ETDEWEB)
Dhayal, Suman S., E-mail: ssdhayal@gmail.com [Department of Physics, University of North Texas, P.O. Box 311427, Denton, Texas 76203 (United States); Ramaniah, Lavanya M., E-mail: lavanya@barc.gov.in [High Pressure and Synchrotron Radiation Physics Division, Physics Group, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Ruda, Harry E.; Nair, Selvakumar V., E-mail: selva.nair@utoronto.ca [Centre for Nanotechnology, University of Toronto, 170 College Street, Toronto, Ontario M5S 3E3 (Canada)
2014-11-28
In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.
Simulating electron spin entanglement in a double quantum dot
Rodriguez-Moreno, M. A.; Hernandez de La Luz, A. D.; Meza-Montes, Lilia
2011-03-01
One of the biggest advantages of having a working quantum-computing device when compared with a classical one, is the exponential speedup of calculations. This exponential increase is based on the ability of a quantum system to create and operate on entangled states. In order to study theoretically the entanglement between two electron spins, we simulate the dynamics of two electron spins in an electrostatically-defined double quantum dot with a finite barrier height between the dots. Electrons are initially confined to separated quantum dots. Barrier height is varied and the spin entanglement as a function of this variation is investigated. The evolution of the system is simulated by using a numerical approach for solving the time-dependent Schrödinger equation for two particles. Partially supported by VIEP-BUAP.
Semiconductor quantum-dot lasers and amplifiers
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.
2002-01-01
We have produced GaAs-based quantum-dot edge-emitting lasers operating at 1.16 mu m with record-low transparency current, high output power, and high internal quantum efficiencies. We have also realized GaAs-based quantum-dot lasers emitting at 1.3 mu m, both high-power edge emitters and low...
Semiconductor quantum dots for electron spin qubits
van der Wiel, Wilfred Gerard; Stopa, M.; Kodera, T.; Hatano, T.; Tarucha, S.
2006-01-01
We report on our recent progress in applying semiconductor quantum dots for spin-based quantum computation, as proposed by Loss and DiVincenzo (1998 Phys. Rev. A 57 120). For the purpose of single-electron spin resonance, we study different types of single quantum dot devices that are designed for
Cichy, B.; Rich, R.; Olejniczak, A.; Gryczynski, Z.; Strek, W.
2016-02-01
Ternary AgInS2 quantum dots (QDs) have been found as promising cadmium-free, red-shifted, and tunable luminescent bio-probes with efficient Stokes and anti-Stokes excitations and luminescence lifetimes (ca. 100 ns) convenient for time resolved techniques like fluorescence life-time imaging. Although the spectral properties of the AgInS2 QDs are encouraging, the complex recombination kinetics in the QDs being still far from understood, limits their full utility. In this paper we report on a model describing the recombination pathways responsible for large deviations from the first-order decay law observed commonly in the ternary chalcogenides. The presented results were evaluated by means of individual AgInS2 QD spectroscopy aided by first principles calculations including the electronic structure and structural reconstruction of the QDs. Special attention was devoted to study the impact of the surface charge state on the excited state relaxation and effect of its passivation by Zn2+ ion alloying. Two different blinking mechanisms related to defect-assisted charge imbalance in the QD responsible for fast non-radiative relaxation of the excited states as well as surface recharging of the QD were found as the major causes of deviations from the first-order decay law. Careful optimization of the AgInS2 QDs would help to fabricate new red-shifted and tunable fluorescent bio-probes characterized by low-toxicity, high quantum yield, long luminescence lifetime, and time stability, leading to many novel in vitro and in vivo applications based on fluorescence lifetime imaging (FLIM) and time-gated detection.Ternary AgInS2 quantum dots (QDs) have been found as promising cadmium-free, red-shifted, and tunable luminescent bio-probes with efficient Stokes and anti-Stokes excitations and luminescence lifetimes (ca. 100 ns) convenient for time resolved techniques like fluorescence life-time imaging. Although the spectral properties of the AgInS2 QDs are encouraging, the complex
Tunable few-electron double quantum dots and Klein tunnelling in ultraclean carbon nanotubes.
Steele, G A; Gotz, G; Kouwenhoven, L P
2009-06-01
Quantum dots defined in carbon nanotubes are a platform for both basic scientific studies and research into new device applications. In particular, they have unique properties that make them attractive for studying the coherent properties of single-electron spins. To perform such experiments it is necessary to confine a single electron in a quantum dot with highly tunable barriers, but disorder has prevented tunable nanotube-based quantum-dot devices from reaching the single-electron regime. Here, we use local gate voltages applied to an ultraclean suspended nanotube to confine a single electron in both a single quantum dot and, for the first time, in a tunable double quantum dot. This tunability is limited by a novel type of tunnelling that is analogous to the tunnelling in the Klein paradox of relativistic quantum mechanics.
Nano-laser on silicon quantum dots
Huang, Wei-Qi; Liu, Shi-Rong; Qin, Chao-Jian; Lü, Quan; Xu, Li
2011-04-01
A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the population inversion can be formed between the valence band and the localized states in gap produced from the surface bonds of nano-clusters. Here we report the experimental demonstration of nano-laser on silicon quantum dots fabricated by nanosecond pulse laser. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of QD (d nano-laser will be limited in the range of 1.7-2.3 eV generally due to the position of the localized states in gap, which is in good agreement between the experiments and the theory.
Ultrasmall colloidal PbS quantum dots
Energy Technology Data Exchange (ETDEWEB)
Reilly, Nick; Wehrung, Michael; O' Dell, Ryan Andrew [Department of Physics and Astronomy, Bowling Green State University, Bowling Green, OH 43403 (United States); Sun, Liangfeng, E-mail: lsun@bgsu.edu [Department of Physics and Astronomy, Bowling Green State University, Bowling Green, OH 43403 (United States); Center for Photochemical Sciences, Bowling Green State University, Bowling Green, OH 43403 (United States)
2014-09-15
Ultrasmall colloidal lead sulfide quantum dots can increase the open circuit voltages of quantum-dot-based solar cells because of their large energy gap. Their small size and visible or near infrared light-emitting property make them attractive to the applications of biological fluorescence labeling. Through a modified organometallic route, we can synthesize lead sulfide quantum dots as small as 1.6 nm in diameter. The low reaction temperature and the addition of a chloroalkane cosolvent decrease the reaction rate, making it possible to obtain the ultrasmall quantum dots. - Highlights: • Ultrasmall colloidal PbS quantum dots as small as 1.6 nm in diameter are synthesized. • The quantum dots emit red light with photoluminescence peak at 760 nm. • The growth temperature is as low as 50 °C. • Addition of cosolvent 1,2-dichloroethane in the reaction decreases the reaction rate.
Zhu, Chengling; Zhu, Shenmin; Zhang, Kai; Hui, Zeyu; Pan, Hui; Chen, Zhixin; Li, Yao; Zhang, Di; Wang, Da-Wei
2016-05-01
Construction of metal oxide nanoparticles as anodes is of special interest for next-generation lithium-ion batteries. The main challenge lies in their rapid capacity fading caused by the structural degradation and instability of solid-electrolyte interphase (SEI) layer during charge/discharge process. Herein, we address these problems by constructing a novel-structured SnO2-based anode. The novel structure consists of mesoporous clusters of SnO2 quantum dots (SnO2 QDs), which are wrapped with reduced graphene oxide (RGO) sheets. The mesopores inside the clusters provide enough room for the expansion and contraction of SnO2 QDs during charge/discharge process while the integral structure of the clusters can be maintained. The wrapping RGO sheets act as electrolyte barrier and conductive reinforcement. When used as an anode, the resultant composite (MQDC-SnO2/RGO) shows an extremely high reversible capacity of 924 mAh g-1 after 200 cycles at 100 mA g-1, superior capacity retention (96%), and outstanding rate performance (505 mAh g-1 after 1000 cycles at 1000 mA g-1). Importantly, the materials can be easily scaled up under mild conditions. Our findings pave a new way for the development of metal oxide towards enhanced lithium storage performance.
Spontaneous Coherence Effects in Quantum Dots and Quantum Wells Placed in Microcavities
Directory of Open Access Journals (Sweden)
Kaputkina N.E.
2016-01-01
Full Text Available The Bose-Einstein condensation temperature Tc for a system of coupled quantum dots in a microcavity was estimated in function of the confining potential steepness, the external magnetic field strength, and the barrier layer width for indirect excitons. The effect of the magnetic field on Tc was found to be nonmonotonic over a certain range of the control parameters. The reason is the presence of two competing mechanisms accompanying the increase of the magnetic field: (a increase of the magnetoexciton effective mass and (b increase of the effective confining potential steepness for quantum dots.
The role of stress in CdTe quantum dot doped glasses
de Thomaz, A. A.; Almeida, D. B.; Pelegati, V. B.; Carvalho, H. F.; Moreira, S. G. C.; Barbosa, L. C.; Cesar, C. L.
2016-11-01
In this work, we unequivocally demonstrate the influence of matrix-related stresses on quantum dots by measuring, side by side, a CdTe quantum dot doped glass and a colloidal sample with similar sizes. We measured the fluorescence spectra and fluorescence lifetime for both samples as a function of the temperature. We show that the expansion coefficient mismatch between CdTe quantum dots and the glass host causes stresses and drastically changes its behavior compared to its colloidal counterpart, even leading to phase transitions. This finding indicates that most experimental data on glass-doped quantum dots used to validate confinement models should be revised, taking stress into account.
The influence of bio-conjugation on photoluminescence of CdSe/ZnS quantum dots
Energy Technology Data Exchange (ETDEWEB)
Torchynska, Tetyana V. [ESFM Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional, México, D.F. 07738 (Mexico); Vorobiev, Yuri V. [Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV) Querétaro, Libramiento Norponiente 2000, Fracc. Real de Juriquilla, 76230 Querétaro (Mexico); Makhniy, Victor P. [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky Str., 58012 Chernivtsi (Ukraine); Horley, Paul P., E-mail: paul.horley@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico)
2014-11-15
We report a considerable blue shift in the luminescence spectra of CdSe/ZnS quantum dots conjugated to anti-interleukin-10 antibodies. This phenomenon can be explained theoretically by accounting for bio-conjugation as a process causing electrostatic interaction between a quantum dot and an antibody, which reduces effective volume of the dot core. To solve the Schrödinger equation for an exciton confined in the quantum dot, we use mirror boundary conditions that were successfully tested for different geometries of quantum wells.
Electron Transport in Quantum Dots and Heat Transport in Molecules
DEFF Research Database (Denmark)
Kirsanskas, Gediminas
to as artificial atoms [2, 3]. Additionally, in order for the system to be truly quantum, the size of the dot has to be comparable to the de Broglie wavelength of the electrons in it. What we have mentioned so far is rather abstract conditions, which practically can be realized in various systems, such as...... in all three directions, which makes it effectively zero dimensional and corresponds to discrete electronic orbitals (levels) and excitation spectrum. This is analogous to the situation in atoms, where confinement potential replaces the potential of the nucleus, thus quantum dots are often referred...
Recent advances in graphene quantum dots for sensing
Directory of Open Access Journals (Sweden)
Hanjun Sun
2013-11-01
Full Text Available Graphene quantum dots (GQDs are a kind of 0D material with characteristics derived from both graphene and carbon dots (CDs. Combining the structure of graphene with the quantum confinement and edge effects of CDs, GQDs possess unique properties. In this review, we focus on the application of GQDs in electronic, photoluminescence, electrochemical and electrochemiluminescence sensor fabrication, and address the advantages of GQDs on physical analysis, chemical analysis and bioanalysis. We have summarized different techniques and given future perspectives for developing smart sensing based on GQDs.
Electronic Structure of Helium Atom in a Quantum Dot
Saha, Jayanta K.; Bhattacharyya, S.; Mukherjee, T. K.
2016-03-01
Bound and resonance states of helium atom have been investigated inside a quantum dot by using explicitly correlated Hylleraas type basis set within the framework of stabilization method. To be specific, precise energy eigenvalues of bound 1sns (1Se) (n = 1-6) states and the resonance parameters i.e. positions and widths of 1Se states due to 2sns (n = 2-5) and 2pnp (n = 2-5) configurations of confined helium below N = 2 ionization threshold of He+ have been estimated. The two-parameter (Depth and Width) finite oscillator potential is used to represent the confining potential due to the quantum dot. It has been explicitly demonstrated that the electronic structural properties become sensitive functions of the dot size. It is observed from the calculations of ionization potential that the stability of an impurity ion within a quantum dot may be manipulated by varying the confinement parameters. A possibility of controlling the autoionization lifetime of doubly excited states of two-electron ions by tuning the width of the quantum cavity is also discussed here. TKM Gratefully Acknowledges Financial Support under Grant No. 37(3)/14/27/2014-BRNS from the Department of Atomic Energy, BRNS, Government of India. SB Acknowledges Financial Support under Grant No. PSW-160/14-15(ERO) from University Grants Commission, Government of India
Activation of silicon quantum dots for emission
Institute of Scientific and Technical Information of China (English)
Huang Wei-Qi; Miao Xin-Jian; Huang Zhong-Mei; Liu Shi-Rong; Qin Chao-Jian
2012-01-01
The emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on the surface of silicon quantum dots can break the passivation to form localized electronic states in the band gap to generate active centers where stronger emission occurs.From this point of view,we can build up radiative matter for emission.Emissions of various wavelengths can be obtained by controlling the surface bonds of silicon quantum dots.Our experimental results demonstrate that annealing is important in the treatment of the activation,and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots.
Synthetic Developments of Nontoxic Quantum Dots.
Das, Adita; Snee, Preston T
2016-03-03
Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems.
Temperature independent infrared responsivity of a quantum dot quantum cascade photodetector
Energy Technology Data Exchange (ETDEWEB)
Wang, Feng-Jiao; Zhuo, Ning; Liu, Shu-Man, E-mail: liusm@semi.ac.cn; Ren, Fei; Ning, Zhen-Dong; Ye, Xiao-Ling; Liu, Jun-Qi; Zhai, Shen-Qiang; Liu, Feng-Qi, E-mail: fqliu@semi.ac.cn; Wang, Zhan-Guo [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083 (China)
2016-06-20
We demonstrate a quantum dot quantum cascade photodetector with a hybrid active region of InAs quantum dots and an InGaAs quantum well, which exhibited a temperature independent response at 4.5 μm. The normal incident responsivity reached 10.3 mA/W at 120 K and maintained a value of 9 mA/W up to 260 K. It exhibited a specific detectivity above 10{sup 11} cm Hz{sup 1/2} W{sup −1} at 77 K, which remained at 10{sup 8} cm Hz{sup 1/2} W{sup −1} at 260 K. We ascribe the device's good thermal stability of infrared response to the three-dimensional quantum confinement of the InAs quantum dots incorporated in the active region.
Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InA1As Wetting Layer
Institute of Scientific and Technical Information of China (English)
ZHANG Yuan-Chang; YE Xiao-Ling; XU Bo; DING Ding; WANG Ji-Zheng; LI Yue-Fa; LIU Feng-Qi; WANG Zhan-Guo; HUANG Chang-Jun
2001-01-01
We have developed a nev self-assembled quantum dot system where InGaAs dots are formed on an InAlAs wetting layer and embedded in the GaAs matrix. The structure is realized by special sample designation and demonstrated by low-temperature photoluminescence measurements. In contrast to the traditional InAs/GaAs quantum dots dominated by the ensemble effect, the temperature dependence of the photoluminescence of such a quantum dot structure behaves as decoupled quantum dots. This can be attributed to the enhanced potential confinement for the dots provided by a higher-energy barrier in the wetting layer
Quantum optics with quantum dots in photonic nanowires
DEFF Research Database (Denmark)
We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices.......We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices....
Quantum Optics with Quantum Dots in Photonic Nanowires
DEFF Research Database (Denmark)
Gérard, J.-M.; Claudon, J.; Bleuse, J.;
2011-01-01
We review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices.......We review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices....
Computation of hyperfine energies of hydrogen, deuterium and tritium quantum dots
Energy Technology Data Exchange (ETDEWEB)
Çakır, Bekir, E-mail: bcakir@selcuk.edu.tr [Physics Department, Faculty of Science, Selcuk University, Campus 42075, Konya (Turkey); Özmen, Ayhan [Physics Department, Faculty of Science, Selcuk University, Campus 42075, Konya (Turkey); Yakar, Yusuf, E-mail: yuyakar@yahoo.com [Physics Department, Faculty of Arts and Science, Aksaray University, Campus 68100, Aksaray (Turkey)
2016-01-15
The hyperfine energies and hyperfine constants of the ground and excited states of hydrogen, deuterium and tritium quantum dots(QDs) are calculated. Quantum genetic algorithm (QGA) and Hartree–Fock–Roothaan (HFR) methods are employed to calculate the unperturbed wave functions and energy eigenvalues. The results show that in the medium and strong confinement regions the hyperfine energy and hyperfine constant are strongly affected by dot radius, impurity charge, electron spin orientation, impurity spin and impurity magnetic moment. Besides, in all dot radii, the hyperfine splitting and hyperfine constant of the confined hydrogen and tritium atoms are approximately equivalent to each other and they are greater than the confined deuterium atom.
Computation of hyperfine energies of hydrogen, deuterium and tritium quantum dots
Çakır, Bekir; Özmen, Ayhan; Yakar, Yusuf
2016-01-01
The hyperfine energies and hyperfine constants of the ground and excited states of hydrogen, deuterium and tritium quantum dots(QDs) are calculated. Quantum genetic algorithm (QGA) and Hartree-Fock-Roothaan (HFR) methods are employed to calculate the unperturbed wave functions and energy eigenvalues. The results show that in the medium and strong confinement regions the hyperfine energy and hyperfine constant are strongly affected by dot radius, impurity charge, electron spin orientation, impurity spin and impurity magnetic moment. Besides, in all dot radii, the hyperfine splitting and hyperfine constant of the confined hydrogen and tritium atoms are approximately equivalent to each other and they are greater than the confined deuterium atom.
Colloidal quantum dots as optoelectronic elements
Vasudev, Milana; Yamanaka, Takayuki; Sun, Ke; Li, Yang; Yang, Jianyong; Ramadurai, Dinakar; Stroscio, Michael A.; Dutta, Mitra
2007-02-01
Novel optoelectronic systems based on ensembles of semiconductor nanocrystals are addressed in this paper. Colloidal semiconductor quantum dots and related quantum-wire structures have been characterized optically; these optical measurements include those made on self-assembled monolayers of DNA molecules terminated on one end with a common substrate and on the other end with TiO II quantum dots. The electronic properties of these structures are modeled and compared with experiment. The characterization and application of ensembles of colloidal quantum dots with molecular interconnects are considered. The chemically-directed assembly of ensembles of colloidal quantum dots with biomolecular interconnects is demonstrated with quantum dot densities in excess of 10 +17 cm -3. A number of novel photodetectors have been designed based on the combined use of double-barrier quantum-well injectors, colloidal quantum dots, and conductive polymers. Optoelectronic devices including photodetectors and solar cells based on threedimensional ensembles of quantum dots are considered along with underlying phenomena such as miniband formation and the robustness of minibands to displacements of quantum dots in the ensemble.
Chiral quantum dot based materials
Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii
2014-05-01
Recently, the use of stereospecific chiral stabilising molecules has also opened another avenue of interest in the area of quantum dot (QD) research. The main goal of our research is to develop new types of technologically important quantum dot materials containing chiral defects, study their properties and explore their applications. The utilisation of chiral penicillamine stabilisers allowed the preparation of new water soluble white emitting CdS quantum nanostructures which demonstrated circular dichroism in the band-edge region of the spectrum. It was also demonstrated that all three types of QDs (D-, L-, and Rac penicillamine stabilised) show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. In this work the chiral CdS based quantum nanostructures have also been doped by copper metal ions and new chiral penicilamine stabilized CuS nanoparticles have been prepared and investigated. It was found that copper doping had a strong effect at low levels in the synthesis of chiral CdS nanostructures. We expect that this research will open new horizons in the chemistry of chiral nanomaterials and their application in biotechnology, sensing and asymmetric synthesis.
Calculation of hyperfine interaction in spherical quantum dot
Yakar, Yusuf; Çakır, Bekir; Özmen, Ayhan
2015-10-01
In this study, we have calculated the unperturbed wavefunctions and energy eigenvalues of the ground and excited states of a spherical quantum dot, GaAs/AlxGa1-xAs, by using quantum genetic algorithm and Hartree-Fock Roothaan method. Hyperfine coupling constant and hyperfine energy of 1s, 2p, 3d and 4f levels are carried out as a function of dot radius. The results show that the hyperfine constant and hyperfine energy varies rapidly in the strong and medium confining regions as dot radius decreases. It is worth pointing out that dot radius, impurity charge and angular momentum have a strong influence on the hyperfine energy. It is also found that hyperfine energy and hyperfine splitting vary with aluminium concentration ratio x.
Quantum Dot Spectrum Converters for Enhanced High Efficiency Photovoltaics Project
National Aeronautics and Space Administration — This research proposes to enhance solar cell efficiency, radiation resistance and affordability. The Quantum Dot Spectrum Converter (QDSC) disperses quantum dots...
Laser location and manipulation of a single quantum tunneling channel in an InAs quantum dot.
Makarovsky, O; Vdovin, E E; Patané, A; Eaves, L; Makhonin, M N; Tartakovskii, A I; Hopkinson, M
2012-03-16
We use a femtowatt focused laser beam to locate and manipulate a single quantum tunneling channel associated with an individual InAs quantum dot within an ensemble of dots. The intensity of the directed laser beam tunes the tunneling current through the targeted dot with an effective optical gain of 10(7) and modifies the curvature of the dot's confining potential and the spatial extent of its ground state electron eigenfunction. These observations are explained by the effect of photocreated hole charges which become bound close to the targeted dot, thus acting as an optically induced gate electrode.
Zhou, Panpan; Xie, Yu; Fang, Jing; Ling, Yun; Yu, Changling; Liu, Xiaoming; Dai, Yuhua; Qin, Yuancheng; Zhou, Dan
2017-07-01
In this paper, the mesoporous TiO2 with different concentration of CdS quantum dots (i.e., x% CdS/TiO2) was successfully fabricated by the sol-gel method. The composition, structure and morphology of the nanocomposites were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-vis diffuse reflectance spectroscopy (UV-Vis/DRS) and nitrogen physical adsorption test and so on. The proportion of CdS and TiO2 is very important for the photocatalytic performance. As a result, the photocatalytic degradation performance from the most to the least is in the order of 2% CdS/TiO2, 4% CdS/TiO2, 8% CdS/TiO2, pure TiO2 and 1% CdS/TiO2. The photocatalytic (PC) activity of the 2% CdSTiO2 is characterized by photocatalytic degradation of methyl orange, which can be completely degraded within 45 min better than 60 min TiO2 takes. It is also much better than CdS. Moreover, other four organic pollutants, such as methylthionine chloride, bisphenol A, rhodamine B, malachite green can also be degraded quickly on the condition of 2% CdS/TiO2. What's more, the chemical stability and cycling capability of 2% CdS/TiO2 are reflected by five cyclic degradation of methyl orange.
Study of the electric capacitance spectra on symmetric quantum-dot pattern
Institute of Scientific and Technical Information of China (English)
DAI; Zhenhong(戴振宏); SUN; Jinzuo(孙金祚); ZHANG; Lide; (张立德); SUI; Pengfei(隋鹏飞); HUANG; Shiyong(黄士勇); LU; Maowang(卢卯旺)
2003-01-01
We have calculated the ground-state energy of the symmetric quantum-dot pattern by the ab initio calculation method, i.e. unrestricted Hartree-Fock-Roothaan (UHFR) method based on the Gaussian basis, and studied their electric capacitance spectra, assuming each quantum dot of quantum-dot pattern to be confined in a three-dimensional spherical potential well of finite depth. For the systems in question, our results show that our method and theoretical model not only give the electric capacitance peaks similar to s-shell and p-shell atom-like quantum dot, but also show some new fine-structure of electric capacitance in the symmetric quantum-dot pattern system. This method might be a feasible tool to study few-electron problems on the symmetric quantum-dot pattern system.
Theory of Confined Quantum Time of Arrivals
Galapon, E A
2005-01-01
We extend the concept of confined quantum time of arrival operators, first developed for the free particle [E.A. Galapon, R. Caballar, R. Bahague {\\it Phys. Rev. Let.} {\\bf 93} 180406 (2004)], to arbitrary potentials.
Adegoke, Oluwasesan; Park, Enoch Y.
2016-06-01
The development of alloyed quantum dot (QD) nanocrystals with attractive optical properties for a wide array of chemical and biological applications is a growing research field. In this work, size-tunable engineered band gap composition-dependent alloying and fixed-composition alloying were employed to fabricate new L-cysteine-capped alloyed quaternary CdZnTeS QDs exhibiting different internal structures. Lattice parameters simulated based on powder X-ray diffraction (PXRD) revealed the internal structure of the composition-dependent alloyed CdxZnyTeS QDs to have a gradient nature, whereas the fixed-composition alloyed QDs exhibited a homogenous internal structure. Transmission electron microscopy (TEM) and dynamic light scattering (DLS) analysis confirmed the size-confined nature and monodispersity of the alloyed nanocrystals. The zeta potential values were within the accepted range of colloidal stability. Circular dichroism (CD) analysis showed that the surface-capped L-cysteine ligand induced electronic and conformational chiroptical changes in the alloyed nanocrystals. The photoluminescence (PL) quantum yield (QY) values of the gradient alloyed QDs were 27–61%, whereas for the homogenous alloyed QDs, the PL QY values were spectacularly high (72–93%). Our work demonstrates that engineered fixed alloying produces homogenous QD nanocrystals with higher PL QY than composition-dependent alloying.
Modeling charge relaxation in graphene quantum dots induced by electron-phonon interaction
Reichardt, Sven; Stampfer, Christoph
2016-06-01
We study and compare two analytic models of graphene quantum dots for calculating charge relaxation times due to electron-phonon interaction. Recently, charge relaxation processes in graphene quantum dots have been probed experimentally and here we provide a theoretical estimate of relaxation times. By comparing a model with pure edge confinement to a model with electrostatic confinement, we find that the latter features much larger relaxation times. Interestingly, relaxation times in electrostatically defined quantum dots are predicted to exceed the experimentally observed lower bound of ˜100 ns.
Exciton in type-II quantum dot
Energy Technology Data Exchange (ETDEWEB)
Sierra-Ortega, J; Escorcia, R A [Universidad del Magdalena, A. A. 731, Santa Marta (Colombia); Mikhailov, I D, E-mail: jsierraortega@gmail.co [Universidad Industrial de Santander, A. A. 678, Bucaramanga (Colombia)
2009-05-01
We study the quantum-size effect and the influence of the external magnetic field on the exciton ground state energy in the type-II InP quantum disk, lens and pyramid deposited on a wetting layer and embedded in a GaInP matrix. We show that the charge distribution over and below quantum dot and wetting layer induced by trapped exciton strongly depends on the quantum dot morphology and the strength of the magnetic field.
Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.
2000-01-01
The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.
Electronic structure of helium atom in a quantum dot
Saha, Jayanta K; Mukherjee, T K
2015-01-01
Bound and resonance states of helium atom have been investigated inside a quantum dot by using explicitly correlated Hylleraas type basis set within the framework of stabilization method. To be specific, precise energy eigenvalues of bound 1sns (1Se) [n = 1-6] states and the resonance parameters i.e. positions and widths of 1Se states due to 2sns [n = 2-5] and 2pnp [n = 2-5] configuration of confined helium below N = 2 ionization threshold of He+ have been estimated. The two-parameter (Depth and Width) finite oscillator potential is used to represent the confining potential representing the quantum dot. It has been explicitly demonstrated that electronic structure properties become a sensitive function of the dot size. It is observed from the calculations of ionization potential that the stability of an impurity ion within quantum dot may be manipulated by varying the confinement parameters. A possibility of controlling the autoionization lifetime of doubly excited states of two-electron ions by tuning the wi...
Robust effective Zeeman energy in monolayer MoS2 quantum dots
Dias, A. C.; Fu, Jiyong; Villegas-Lelovsky, L.; Qu, Fanyao
2016-09-01
We report a theoretical investigation on the energy spectrum and the effective Zeeman energy (EZE) in monolayer MoS2 circular quantum dots, subjected to an out-of-plane magnetic field. Interestingly, we observe the emergence of energy-locked modes, depending on the competition between the dot confinement and the applied magnetic field, for either the highest K-valley valence band or the lowest {{K}\\prime} -valley conduction band. Moreover, an unusual dot-size-independent EZE behavior of the highest valence and the lowest conduction bands is found. Although the EZEs are insensitive to the variation of quantum confinement, both of them grow linearly with the magnetic field, similar to that in the monolayer MoS2 material. The EZEs along with their ‘robustness’ against dot confinements open opportunities of a universal magnetic control over the valley degree of freedom, for quantum dots of all sizes.
Optical studies of capped quantum dots
Wuister, S.F.
2005-01-01
This thesis describes the synthesis and spectroscopy of CdSe and CdTe semiconductor quantum dots (QDs). The first chapter gives an introduction into the unique size dependent properties of semiconductor quantum dots. Highly luminescent QDs of CdSe and CdTe were prepared via a high temperature method
Detecting the chirality for coupled quantum dots
Energy Technology Data Exchange (ETDEWEB)
Cao Huijuan [Institute for Condensed Matter Physics, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China); Hu Lian [Institute for Condensed Matter Physics, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)], E-mail: huliancaohj@yahoo.com
2008-04-21
We propose a scheme to detect the chirality for a system consisting of three coupled quantum dots. The chirality is found to be determined by the frequency of the transition between chiral states under the chiral symmetry broken perturbation. The results are important to construct quantum gates and to demonstrate chiral entangle states in the triangle spin dots.
Research on Self-Assembling Quantum Dots.
1995-10-30
0K. in a second phase of this contract we turned our efforts to the fabrication and studies of self assembled quantum dots . We first demonstrated a...method for producing InAs-GasAs self assembled quantum dots (SAD) using MBE. (AN)
Thick-shell nanocrystal quantum dots
Hollingsworth, Jennifer A.; Chen, Yongfen; Klimov, Victor I.; Htoon, Han; Vela, Javier
2011-05-03
Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.
Complex dynamics in planar two-electron quantum dots
Energy Technology Data Exchange (ETDEWEB)
Schroeter, Sebastian Josef Arthur
2013-06-25
Quantum dots play an important role in a wide range of recent experimental and technological developments. In particular they are promising candidates for realisations of quantum bits and further applications in quantum information theory. The harmonically confined Hooke's atom model is experimentally verified and separates in centre-of-mass and relative coordinates. Findings that are contradictory to this separability call for an extension of the model, in particular changing the confinement potential. In order to study effects of an anharmonic confinement potential on spectral properties of planar two-electron quantum dots a sophisticated numerical approach is developed. Comparison between the Helium atom, Hooke's atom and an anharmonic potential model are undertaken in order to improve the description of quantum dots. Classical and quantum features of complexity and chaos are investigated and used to characterise the dynamics of the system to be mixed regular-chaotic. Influence of decoherence can be described by quantum fidelity, which measures the effect of a perturbation on the time evolution. The quantum fidelity of eigenstates of the system depends strongly on the properties of the perturbation. Several methods for solving the time-dependent Schrödinger equation are implemented and a high level of accuracy for long time evolutions is achieved. The concept of offset entanglement, the entanglement of harmonic models in the noninteracting limit, is introduced. This concept explains different questions raised in the literature for harmonic quantum dot models, recently. It shows that only in the groundstate the electrons are not entangled in the fermionic sense. The applicability, validity, and origin of Hund's first rule in general quantum dot models is further addressed. In fact Hund's first rule is only applicable, and in this case also valid, for one pair of singlet and triplet states in Hooke's atom. For more realistic models of two
Biocompatible quantum dots for biological applications.
Rosenthal, Sandra J; Chang, Jerry C; Kovtun, Oleg; McBride, James R; Tomlinson, Ian D
2011-01-28
Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, size-tunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots.
Four-wave mixing in InAlGaAs quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Birkedal, Dan; Hvam, Jørn Märcher
2001-01-01
The nonlinear optical properties of semiconductor quantum dots are of interest, both fundamentally and for potential device applications. Large optical nonlinearities are predicted due to the three dimensional confinement but the small active volume of the dots and their large inhomogeneous...... broadening strongly reduce the interaction with the electromagnetic field. Until now, four-wave mixing (FWM) in III-V quantum dots has only been reported in optical amplifiers at room temperature, where the interaction length is increased by waveguiding in the quantum dot plane. We have carried out...
Coherent optoelectronics with single quantum dots
Energy Technology Data Exchange (ETDEWEB)
Zrenner, A; Ester, P; Michaelis de Vasconcellos, S; Huebner, M C; Lackmann, L; Stufler, S [Universitaet Paderborn, Department Physik, Warburger Strasse 100, D-33098 Paderborn (Germany); Bichler, M [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany)], E-mail: zrenner@mail.upb.de
2008-11-12
The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.
Coherent optoelectronics with single quantum dots
Zrenner, A.; Ester, P.; Michaelis de Vasconcellos, S.; Hübner, M. C.; Lackmann, L.; Stufler, S.; Bichler, M.
2008-11-01
The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.
Quantum dot devices for optical communications
DEFF Research Database (Denmark)
Mørk, Jesper
2005-01-01
. The main property of semiconductor quantum dots compared to bulk material or even quantum well structures is the discrete nature of the allowed states, which means that inversion of the medium can be obtained for very low electron densities. This has led to the fabrication of quantum dot lasers with record......-low threshold currents and amplifiers with record-high power levels. In this tutorial we will review the basic properties of quantum dots, emphasizing the properties which are important for laser and amplifier applications, as well as devices for all-optical signal processing. The high-speed properties...
Electron transport in quantum dots
2003-01-01
When I was contacted by Kluwer Academic Publishers in the Fall of 200 I, inviting me to edit a volume of papers on the issue of electron transport in quantum dots, I was excited by what I saw as an ideal opportunity to provide an overview of a field of research that has made significant contributions in recent years, both to our understanding of fundamental physics, and to the development of novel nanoelectronic technologies. The need for such a volume seemed to be made more pressing by the fact that few comprehensive reviews of this topic have appeared in the literature, in spite of the vast activity in this area over the course of the last decade or so. With this motivation, I set out to try to compile a volume that would fairly reflect the wide range of opinions that has emerged in the study of electron transport in quantum dots. Indeed, there has been no effort on my part to ensure any consistency between the different chapters, since I would prefer that this volume instead serve as a useful forum for the...
Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers
DEFF Research Database (Denmark)
Thompson, M.G.; Marinelli, C.; Chu, Y.
Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.......Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance....
Quantum Computing with Electron Spins in Quantum Dots
Vandersypen, L M K; Van Beveren, L H W; Elzerman, J M; Greidanus, J S; De Franceschi, S; Kouwenhoven, Leo P
2002-01-01
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable spin-polarization. Read-out hinges on spin-to-charge conversion via spin-selective tunneling to or from the leads, followed by measurement of the number of electron charges on the dot via a charge detector. Single-qubit manipulation relies on a microfabricated wire located close to the quantum dot, and two-qubit interactions are controlled via the tunnel barrier connecting the respective quantum dots. Based on these ideas, we have begun a series of experiments in order to demonstrate unitary control and to measure the coherence time of individual electron spins in quantum dots.
Thermoelectric transport through quantum dots
Energy Technology Data Exchange (ETDEWEB)
Merker, Lukas Heinrich
2016-06-30
In this thesis the thermoelectric properties (electrical conductance, Seebeck coefficient and thermal conductance)of quantum dots described by the Anderson impurity model have been investigated by using the numerical renormalization group (NRG) method. In order to make accurate calculations for thermoelectric properties of quantum impurity systems, a number of recent developments and refinements of the NRG have been implemented. These include the z-averaging and Campo discretization scheme, which enable the evaluation of physical quantities on an arbitrary temperature grid and at large discretization parameter Λ and the full density matrix (FDM) approach, which allows a more accurate calculation of spectral functions and transport coefficients. The implementation of the z-averaging and Campo discretization scheme has been tested within a new method for specific heats of quantum impurities. The accuracy of this new method was established by comparison with the numerical solution of the Bethe-ansatz equations for the Anderson model. The FDM approach was implemented and tested within a new approach to the calculation of impurity contributions to the uniform susceptibilities. Within this method a non-negligible contribution from the ''environmental'' degrees of freedom needs to be taken into account to recover the correct susceptibility, as shown by comparison with the Bethe-ansatz approach. An accurate method to calculate the conductance of a quantum dot is implemented, enabling the extraction of the Fermi liquid scaling coefficients c{sub T} and c{sub B} to high accuracy, being able to verify the results of the renormalized super perturbation theory approach (within its regime of validity). The method was generalized to higher order moments of the local level spectral function. This, as well as reduction of the SU(2) code to the U(1) symmetry, enabled the investigation of the effect of a magnetic field on the thermoelectric properties of quantum
Theory of Electro-optic Modulation via a Quantum Dot Coupled to a Nano-resonator
Majumdar, Arka; Faraon, Andrei; Vuckovic, Jelena
2009-01-01
In this paper, we analyze the performance of an electro-optic modulator based on a single quantum dot strongly coupled to a nano-resonator, where electrical control of the quantum dot frequency is achieved via quantum confined Stark effect. Using realistic system parameters, we show that modulation speeds of a few tens of GHz are achievable with this system, while the energy per switching operation can be as small as 0.5 fJ. In addition, we study the non-linear distortion, and the effect of pure quantum dot dephasing on the performance of the modulator.
Quantum dot devices for optical communications
DEFF Research Database (Denmark)
Mørk, Jesper
2005-01-01
Semiconductor quantum dots are often described as "artificial atoms": They are small nanometre-sized structures in which electrons only are allowed to exist at certain discrete levels due to size quantization, thus allowing the engineering of fundamental properties such as the coupling to light....... The main property of semiconductor quantum dots compared to bulk material or even quantum well structures is the discrete nature of the allowed states, which means that inversion of the medium can be obtained for very low electron densities. This has led to the fabrication of quantum dot lasers with record......-low threshold currents and amplifiers with record-high power levels. In this tutorial we will review the basic properties of quantum dots, emphasizing the properties which are important for laser and amplifier applications, as well as devices for all-optical signal processing. The high-speed properties...
Self-assembled quantum dots in a nanowire system for quantum photonics.
Heiss, M; Fontana, Y; Gustafsson, A; Wüst, G; Magen, C; O'Regan, D D; Luo, J W; Ketterer, B; Conesa-Boj, S; Kuhlmann, A V; Houel, J; Russo-Averchi, E; Morante, J R; Cantoni, M; Marzari, N; Arbiol, J; Zunger, A; Warburton, R J; Fontcuberta i Morral, A
2013-05-01
Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-assembly is a potentially more powerful strategy. However, present approaches often yield quantum dots with large optical linewidths, making reproducibility of their physical properties difficult. We present a versatile quantum-dot-in-nanowire system that reproducibly self-assembles in core-shell GaAs/AlGaAs nanowires. The quantum dots form at the apex of a GaAs/AlGaAs interface, are highly stable, and can be positioned with nanometre precision relative to the nanowire centre. Unusually, their emission is blue-shifted relative to the lowest energy continuum states of the GaAs core. Large-scale electronic structure calculations show that the origin of the optical transitions lies in quantum confinement due to Al-rich barriers. By emitting in the red and self-assembling on silicon substrates, these quantum dots could therefore become building blocks for solid-state lighting devices and third-generation solar cells.
Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots
Energy Technology Data Exchange (ETDEWEB)
Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)
2014-01-06
The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.
Effect of the Electron－LO－Phonon Coupling on an Exciton Quantum Dot
Institute of Scientific and Technical Information of China (English)
XIEWen－Fang; ZHUWu
2002-01-01
The influence of the electron-LO-phonon coupling on energy spectrum of the low -lying states of an exciton in parabolic quantum dots is investigated as a function of dot size.Calculations are made by using the method of few-body physics within the effective-mass approximation.A considerable decrease of the energy in the stronger confinement range is found for the low-lying states of an exction in quantum dots.Which results from the confinement of electron-phonon coupling.
Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
Directory of Open Access Journals (Sweden)
Y. C. Chang
2015-06-01
Full Text Available We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.
Scanning gate microscopy of ultra clean carbon nanotube quantum dots
Xue, Jiamin; Dhall, Rohan; Cronin, Stephen B.; LeRoy, Brian J.
2015-01-01
We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in this study, two new effects are clearly identified. Electrostatic screening creates non-overlapping multiple sets of Coulomb rings from a single quantum dot. In double quantum dots, by changing the tip voltage, the interactions between the quantum dots can b...
Quantum dots for terahertz generation
Energy Technology Data Exchange (ETDEWEB)
Liu, H C; Aslan, B; Gupta, J A; Wasilewski, Z R; Aers, G C; SpringThorpe, A J; Buchanan, M [Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6 (Canada)], E-mail: h.c.liu@nrc.ca
2008-09-24
Nanostructures made of semiconductors, such as quantum wells and quantum dots (QD), are well known, and some have been incorporated in practical devices. Here we focus on novel structures made of QDs and related devices for terahertz (THz) generation. Their potential advantages, such as low threshold current density, high characteristic temperature, increased differential gain, etc, make QDs promising candidates for light emitting applications in the THz region. Our idea of using resonant tunneling through QDs is presented, and initial results on devices consisting of self-assembled InAs QDs in an undoped GaAs matrix, with a design incorporating a GaInNAs/GaAs short period superlattice, are discussed. Moreover, shallow impurities are also being explored for possible THz emission: the idea is based on the tunneling through bound states of individual donor or acceptor impurities in the quantum well. Initial results on devices having an AlGaAs/GaAs double-barrier resonant tunneling structure are discussed.
Electronic properties of aperiodic quantum dot chains
Korotaev, P. Yu.; Vekilov, Yu. Kh.; Kaputkina, N. E.
2012-04-01
The electronic spectral and transport properties of aperiodic quantum dot chains are investigated. The systems with singular continuous energy spectrum are considered: Thue-Morse chain, double-periodic chain, Rudin-Shapiro chain. The influence of electronic energy in quantum dot on the spectral properties, band structure, density of states and spectral resistivity, is discussed. Low resistivity regions correspond to delocalized states and these states could be current states. Also we discuss the magnetic field application as the way to tune electronic energy in quantum dot and to obtain metallic or insulating conducting states of the systems.
Amplification Without Inversion in Semiconductor Quantum Dot
Hajibadali, A.; Abbasian, K.; Rostami, A.
In this paper, we have realized amplification without inversion (AWI) in quantum dot (QD). A Y-type four-level system of InxGa1-xN quantum dot has been obtained and investigated for AWI. It has been shown that, with proper setting of control fields' amplitude, we can obtain reasonable gain. With proper setting of phase difference of control fields and probe field, we can obtain considerable gain in resonant wavelength. We have designed this system by solving the Schrödinger-Poisson equations for InxGa1-xN quantum dot in GaN substrate, self-consistently.
Time-bin Entanglement from Quantum Dots
Weihs, Gregor; Predojević, Ana
2016-01-01
The desire to have a source of single entangled photon pairs can be satisfied using single quantum dots as emitters. However, we are not bound to pursue only polarization entanglement, but can also exploit other degrees of freedom. In this chapter we focus on the time degree of freedom, to achieve so-called time-bin entanglement. This requires that we prepare the quantum dot coherently into the biexciton state and also build special interferometers for analysis. Finally this technique can be extended to achieve time-bin and polarization hyper-entanglement from a suitable quantum dot.
Fluorescent Quantum Dots for Biological Labeling
McDonald, Gene; Nadeau, Jay; Nealson, Kenneth; Storrie-Lomardi, Michael; Bhartia, Rohit
2003-01-01
Fluorescent semiconductor quantum dots that can serve as "on/off" labels for bacteria and other living cells are undergoing development. The "on/off" characterization of these quantum dots refers to the fact that, when properly designed and manufactured, they do not fluoresce until and unless they come into contact with viable cells of biological species that one seeks to detect. In comparison with prior fluorescence-based means of detecting biological species, fluorescent quantum dots show promise for greater speed, less complexity, greater sensitivity, and greater selectivity for species of interest. There are numerous potential applications in medicine, environmental monitoring, and detection of bioterrorism.
Ihly, Rachelle
2014-01-01
This thesis explores the understanding of the chemistry and physics of colloidal quantum dots for practical solar energy photoconversion. Solar cell devices that make use of PbS quantum dots generally rely on constant and unchanged optical properties such that band gap energies remain tuned within the device. The design and development of unique experiments to ascertain mechanisms of optical band gap shifts occurring in PbS quantum dot thin-films exposed to air are discussed. The systematic s...
Confined Quantum Time of Arrivals
Galapon, E A; Galapon, Eric A.; Bahague, Ricardo T.
2003-01-01
We show that the non-self-adjoint free time of arrival operator in free space defines a class of compact, self-adjoint, and canonical operators for a spatially confined particle. We analytically and numerically study the qualitative behaviors of these operators, and demonstrate that their eigenfunctions and eigenvalues are consistent with the interpretation that they are time of arrival operators.
Institute of Scientific and Technical Information of China (English)
ZHU Zhi-Cheng; TU Tao; GUO Guo-Ping
2011-01-01
We propose an efficient method to create multipartite spin entangled states in quantum dots coupled to a nano electro-mechanical resonator array. Our method, based on the interaction between electron spins confined in quantum dots and the motion of magnetized nano electro-mechanical resonators, can enable a coherent spin-spin coupling over long distances and in principle be applied to an arbitrarily large number of electronic spins.%@@ We propose an efficient method to create multipartite spin entangled states in quantum dots coupled to a nano electro-mechanical resonator array.Our method, based on the interaction between electron spins confined in quantum dots and the motion of magnetized nano electro-mechanical resonators, can enable a coherent spin-spin coupling over long distances and in principle be applied to an arbitrarily large number of electronic spins.
Quantum Dots in Vertical Nanowire Devices
Van Weert, M.
2010-01-01
The research described in this thesis is aimed at constructing a quantum interface between a single electron spin and a photon, using a nanowire quantum dot. Such a quantum interface enables information transfer from a local electron spin to the polarization of a photon for long distance readout.
Non-adiabatic geometrical quantum gates in semiconductor quantum dots
Solinas, P; Zanghì, N; Rossi, F; Solinas, Paolo; Zanardi, Paolo; Zanghì, Nino; Rossi, Fausto
2003-01-01
In this paper we study the implementation of non-adiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding/manipulation schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be in principle implemented
Single to quadruple quantum dots with tunable tunnel couplings
Energy Technology Data Exchange (ETDEWEB)
Takakura, T.; Noiri, A.; Obata, T.; Yoneda, J.; Yoshida, K. [Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Otsuka, T.; Tarucha, S. [Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); RIKEN, Center for Emergent Matter Science, 3-1 Wako-shi, Saitama 351-0198 (Japan)
2014-03-17
We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by the gate geometry. For the triple and quadruple dots, we study the gate-tunable inter-dot tunnel couplings. For the triple dot, we find that the effective tunnel coupling between side dots significantly depends on the alignment of the center dot potential. These results imply that the present quadruple dot has a gate performance relevant for implementing spin-based four-qubits with controllable exchange couplings.
Ground State Transitions of Four-Electron Quantum Dots in Zero Magnetic Field
Institute of Scientific and Technical Information of China (English)
KANG Shuai; XIE Wen-Fang; LIU Yi-Ming; SHI Ting-Yun
2008-01-01
In this paper, we study four electrons confined in a parabolic quantum dot in the absence of magnetic field, by the exact diagonalization method. The ground-state electronic structures and orbital and spin angular momenta transitions as a function of the confined strength are investigated. We find that the confinement may cause accidental degeneracies between levels with different low-lying states and the inversion of the energy values. The present results are useful to understand the optical properties and internal electron-electron correlations of quantum dot materials.
Nanostructure assembly of indium sulphide quantum dots and their characterization.
Vigneashwari, B; Ravichandran, V; Parameswaran, P; Dash, S; Tyagi, A K
2008-02-01
Nanocrystals (approximately 5 nm) of the semiconducting wide band gap material beta-In2S3 obtained by chemical synthesis through a hydrothermal route were characterized for phase and compositional purity. These nanoparticles exhibited quantum confinement characteristics as revealed by a blue-shifted optical absorption. These quantum dots of beta-In2S3 were electrically driven from a monodisperse colloidal suspension on to conducting glass substrates by Electophoretic Deposition (EPD) technique and nanostructural thin films were obtained. The crystalline and morphological structures of these deposits were investigated by X-ray diffraction and nanoscopic techniques. We report here that certain interesting nanostructural morphologies were observed in the two-dimensional quantum dot assemblies of beta-In2S3. The effect of the controlling parameters on the cluster growth and deposit integrity was also systematically studied through a series of experiments and the results are reported here.
Light-hole exciton in a nanowire quantum dot
Jeannin, Mathieu; Artioli, Alberto; Rueda-Fonseca, Pamela; Bellet-Amalric, Edith; Kheng, Kuntheak; André, Régis; Tatarenko, Serge; Cibert, Joël; Ferrand, David; Nogues, Gilles
2017-01-01
Quantum dots inserted inside semiconductor nanowires are extremely promising candidates as building blocks for solid-state-based quantum computation and communication. They provide very high crystalline and optical properties and offer a convenient geometry for electrical contacting. Having a complete determination and full control of their emission properties is one of the key goals of nanoscience researchers. Here we use strain as a tool to create in a single magnetic nanowire quantum dot a light-hole exciton, an optically active quasiparticle formed from a single electron bound to a single light hole. In this frame, we provide a general description of the mixing within the hole quadruplet induced by strain or confinement. A multi-instrumental combination of cathodoluminescence, polarization-resolved Fourier imaging, and magneto-optical spectroscopy, allows us to fully characterize the hole ground state, including its valence band mixing with heavy-hole states.
Boda, Aalu; Boyacioglu, Bahadir; Erkaslan, Ugur; Chatterjee, Ashok
2016-10-01
The effect of Rashba spin-orbit interaction on the electronic, thermodynamic, magnetic and transport properties of a one-electron Gaussian quantum dot is investigated in the presence of a magnetic field and its interaction with the electron spin using the canonical ensemble approach. The temperature-dependent energy, magnetization, susceptibility, specific heat and the persistent current are calculated as a function of the spin-orbit coupling parameter. The results are applied to GaAs, InAs and InSb quantum dots.
Energy Technology Data Exchange (ETDEWEB)
Boda, Aalu [School of Physics, University of Hyderabad, Hyderabad 500046 (India); Boyacioglu, Bahadir [Vocational School of Health Services, University of Ankara, 06290 Ankara (Turkey); Erkaslan, Ugur [Department of Physics, Faculty of Science, Mugla Sitki Kocman University, 48170 Kotekli-Mugla (Turkey); Chatterjee, Ashok, E-mail: acsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Hyderabad 500046 (India)
2016-10-01
The effect of Rashba spin–orbit interaction on the electronic, thermodynamic, magnetic and transport properties of a one-electron Gaussian quantum dot is investigated in the presence of a magnetic field and its interaction with the electron spin using the canonical ensemble approach. The temperature-dependent energy, magnetization, susceptibility, specific heat and the persistent current are calculated as a function of the spin–orbit coupling parameter. The results are applied to GaAs, InAs and InSb quantum dots.
Controlling electron quantum dot qubits by spin-orbit interactions
Energy Technology Data Exchange (ETDEWEB)
Stano, P.
2007-01-15
Single electron confined in a quantum dot is studied. A special emphasis is laid on the spin properties and the influence of spin-orbit interactions on the system. The study is motivated by a perspective exploitation of the spin of the confined electron as a qubit, a basic building block of in a foreseen quantum computer. The electron is described using the single band effective mass approximation, with parameters typical for a lateral electrostatically defined quantum dot in a GaAs/AlGaAs heterostructure. The stemming data for the analysis are obtained by numerical methods of exact diagonalization, however, all important conclusions are explained analytically. The work focuses on three main areas -- electron spectrum, phonon induced relaxation and electrically and magnetically induced Rabi oscillations. It is shown, how spin-orbit interactions influence the energy spectrum, cause finite spin relaxation and allow for all-electrical manipulation of the spin qubit. Among the main results is the discovery of easy passages, where the spin relaxation is unusually slow and the qubit is protected against parasitic electrical fields connected with manipulation by resonant electromagnetic fields. The results provide direct guide for manufacturing quantum dots with much improved properties, suitable for realizing single electron spin qubits. (orig.)
Quantum Dots Investigated for Solar Cells
Bailey, Sheila G.; Castro, Stephanie L.; Raffaelle, Ryne P.; Hepp, Aloysius F.
2001-01-01
The NASA Glenn Research Center has been investigating the synthesis of quantum dots of CdSe and CuInS2 for use in intermediate-bandgap solar cells. Using quantum dots in a solar cell to create an intermediate band will allow the harvesting of a much larger portion of the available solar spectrum. Theoretical studies predict a potential efficiency of 63.2 percent, which is approximately a factor of 2 better than any state-of-the-art devices available today. This technology is also applicable to thin-film devices--where it offers a potential four-fold increase in power-to-weight ratio over the state of the art. Intermediate-bandgap solar cells require that quantum dots be sandwiched in an intrinsic region between the photovoltaic solar cell's ordinary p- and n-type regions (see the preceding figure). The quantum dots form the intermediate band of discrete states that allow sub-bandgap energies to be absorbed. However, when the current is extracted, it is limited by the bandgap, not the individual photon energies. The energy states of the quantum dot can be controlled by controlling the size of the dot. Ironically, the ground-state energy levels are inversely proportional to the size of the quantum dots. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Ba Wendi et al., in the early 1990's. The most studied quantum dots prepared by this method have been of CdSe. To produce these dots, researchers inject a syringe of the desired organometallic precursors into heated triocytlphosphine oxide (TOPO) that has been vigorously stirred under an inert atmosphere (see the following figure). The solution immediately begins to change from colorless to yellow, then orange and red/brown, as the quantum dots increase in size. When the desired size is reached, the heat is removed from the flask. Quantum dots of different sizes can be identified by placing them under a "black light" and observing the various color differences in
Realization of electrically tunable single quantum dot nanocavities
Energy Technology Data Exchange (ETDEWEB)
Hofbauer, Felix Florian Georg
2009-03-15
We investigated the design, fabrication and optical investigation of electrically tunable single quantum dot-photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. We demonstrate that the quantum confined Stark effect can be employed to quickly and reversibly switch the dot-cavity coupling, simply by varying a gate voltage. Our results show that exciton transitions from individual dots can be tuned by up to {proportional_to}4 meV relative to the nanocavity mode, before the emission quenches due to carrier tunneling escape from the dots. We directly probe spontaneous emission, irreversible polariton decay and the statistics of the emitted photons from a single-dot nanocavity in the weak and strong coupling regimes. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the first time. The structures investigated are p-i-n photodiodes consisting of an 180nm thick free-standing GaAs membrane into which a two dimensional photonic crystal is formed by etching a triangular lattice of air holes. Low mode volume nanocavities (V{sub mode}<1.6 ({lambda}/n){sup 3}) are realized by omitting 3 holes in a line to form L3 cavities and a single layer of InGaAs self-assembled quantum dots is embedded into the midpoint of the membrane. The nanocavities are electrically contacted via 35 nm thick p- and n-doped contact layers in the GaAs membrane. In the weak coupling regime, time resolved spectroscopy reveals a {proportional_to}7 x shortening of the spontaneous emission lifetime as the dot is tuned through the nanocavity mode, due to the Purcell effect. Upon strongly detuning the same quantum dot transition from the nanocavity mode we observe an additional {proportional_to}8 x lengthening of the spontaneous emission lifetime. These observations unequivocally highlight two regimes of dot
Optical anisotropy in vertically coupled quantum dots
DEFF Research Database (Denmark)
Yu, Ping; Langbein, Wolfgang Werner; Leosson, Kristjan;
1999-01-01
We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single...... number due to increasing dot size....
Quantum Dots Coupled to a Superconductor
DEFF Research Database (Denmark)
Jellinggaard, Anders Robert
are tuned electrostatically. This includes tuning the odd occupation of the dot through a quantum phase transition, where it forms a singlet with excitations in the superconductor. We detail the fabrication of these bottom gated devices, which additionally feature ancillary sensor dots connected...
Colloidal quantum dot materials for infrared optoelectronics
Arinze, Ebuka S.; Nyirjesy, Gabrielle; Cheng, Yan; Palmquist, Nathan; Thon, Susanna M.
2015-09-01
Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Specifically, the bandgap of films composed of arrays of CQDs can be tuned via the quantum confinement effect for tailored spectral utilization. PbS-based CQDs can be tuned throughout the near and mid-infrared wavelengths and are a promising materials system for photovoltaic devices that harvest non-visible solar radiation. The performance of CQD solar cells is currently limited by an absorption-extraction compromise, whereby photon absorption lengths in the near infrared spectral regime exceed minority carrier diffusion lengths in the bulk films. Several light trapping strategies for overcoming this compromise and increasing the efficiency of infrared energy harvesting will be reviewed. A thin-film interference technique for creating multi-colored and transparent solar cells will be presented, and a discussion of designing plasmonic nanomaterials based on earth-abundant materials for integration into CQD solar cells is developed. The results indicate that it should be possible to achieve high absorption and color-tunability in a scalable nanomaterials system.
Quantum Dot Solar Cell Fabrication Protocols
Energy Technology Data Exchange (ETDEWEB)
Chernomordik, Boris D.; Marshall, Ashley R.; Pach, Gregory F.; Luther, Joseph M.; Beard, Matthew C.
2017-01-10
Colloidally synthesized quantum-confined semiconducting spherical nanocrystals, often referred to as quantum dots (QDs), offer a high degree of chemical, optical, and electronic tunability. As a result, there is an increasing interest in employing colloidal QDs for electronic and optical applications that is reflected in a growing number of publications. In this protocol we provide detailed procedures for the fabrication of QD solar cells specifically employing PbSe and PbS QDs. We include details that are learned through experience, beyond those in typical methodology sections, and include example pictures and videos to aid in fabricating QD solar cells. Although successful solar cell fabrication is ultimately learned through experience, this protocol is intended to accelerate that process. The protocol developed here is intended to be a general starting point for developing PbS and PbSe QD test bed solar cells. We include steps for forming conductive QD films via dip coating as well as spin coating. Finally, we provide protocols that detail the synthesis of PbS and PbSe QDs through a unique cation exchange reaction and discuss how different QD synthetic routes could impact the resulting solar cell performance.
Ge Quantum Dot Infrared Imaging Camera Project
National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...
Chaotic quantum dots with strongly correlated electrons
Shankar, R.
2007-01-01
Quantum dots pose a problem where one must confront three obstacles: randomness, interactions and finite size. Yet it is this confluence that allows one to make some theoretical advances by invoking three theoretical tools: Random Matrix theory (RMT), the Renormalization Group (RG) and the 1/N expansion. Here the reader is introduced to these techniques and shown how they may be combined to answer a set of questions pertaining to quantum dots
Start Shift of Individual Quantum Dots
1999-06-18
We will here describe the results of the influence of electric field on InP quantum dots embedded in GalnP, lattice matched to GaAs. Experimental...details The sample we used was grown by metal-organic vapour phase epitaxy, and contained InP quantum dots in GanP, lattice matched to GaAs (n-type
Germanium quantum dots: Optical properties and synthesis
Heath, James R.; Shiang, J. J.; Alivisatos, A. P.
1994-01-01
Three different size distributions of Ge quantum dots (>~200, 110, and 60 Å) have been synthesized via the ultrasonic mediated reduction of mixtures of chlorogermanes and organochlorogermanes (or organochlorosilanes) by a colloidal sodium/potassium alloy in heptane, followed by annealing in a sealed pressure vessel at 270 °C. The quantum dots are characterized by transmission electron microscopy, x-ray powder diffraction, x-ray photoemission, infrared spectroscopy, and Raman spectroscopy. Col...
Renormalization in Periodically Driven Quantum Dots.
Eissing, A K; Meden, V; Kennes, D M
2016-01-15
We report on strong renormalization encountered in periodically driven interacting quantum dots in the nonadiabatic regime. Correlations between lead and dot electrons enhance or suppress the amplitude of driving depending on the sign of the interaction. Employing a newly developed flexible renormalization-group-based approach for periodic driving to an interacting resonant level we show analytically that the magnitude of this effect follows a power law. Our setup can act as a non-Markovian, single-parameter quantum pump.
Submonolayer Quantum Dot Infrared Photodetector
Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang
2010-01-01
A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.
Nonadiabatic corrections to a quantum dot quantum computer working in adiabatic limit
Indian Academy of Sciences (India)
M Ávila
2014-07-01
The time of operation of an adiabatic quantum computer must be less than the decoherence time, otherwise the computer would be nonoperative. So far, the nonadiabatic corrections to an adiabatic quantum computer are merely theoretical considerations. By the above reason, we consider the particular case of a quantum-dot-confined electron spin qubit working adiabatically in the nanoscale regime (e.g., in the MeV range of energies) and include nonadiabatic corrections in it. If the decoherence times of a quantum dot computer are ∼100 ns [J M Kikkawa and D D Awschalom, Phys. Rev. Lett. 80, 4313 (1998)] then the predicted number of one qubit gate (primitive) operations of the Loss–DiVincenzo quantum computer in such an interval of time must be > 1010. However, if the quantum-dot-confined electron spin qubit is very excited (i.e., the semiclassical limit) the number of operations of such a computer would be approximately the same as that of a classical computer. Our results suggest that for an adiabatic quantum computer to operate successfully within the decoherence times, it is necessary to take into account nonadiabatic corrections.
Energy Spectra of Excitons Bound to a Neutral Acceptor in Quantum Dots
Institute of Scientific and Technical Information of China (English)
XIE Wen-Fang
2004-01-01
The energy spectra of the ground state for an exciton (X) trapped by a neutral acceptor (A0) in a quantum dot with a parabolic confinement have been calculated as a function of the electron-to-hole mass ratio σ by using the hyperspherical coordinates. We find that the (A0, X) complex confined in a quantum dot has in general a larger binding energy than those in a two-dimensional quantum well and a three-dimensional bulk semiconductor, and the binding energy decreases with the increase of the electron-to-hole mass ratio.
Effects of external fields, dimension and polarization on the resonance fluorescence of quantum dots
Energy Technology Data Exchange (ETDEWEB)
Vaseghi, B., E-mail: vaseghi@mail.yu.ac.ir; Razavi, S.M.
2017-02-01
In this paper simultaneous effects of external electric and magnetic fields, dimension and polarization on the resonance fluorescence spectrum and photon statistics of a spherical quantum dot with parabolic confinement are investigated. With special attention to the optical scattering processes resonance fluorescence spectrum and second-order correlation function are calculated and plotted for different external parameters. Our results show the occurrence of resonance fluorescence similar to atomic systems and considerable effects of external fields, quantum confinement and light polarization on the resonance fluorescence spectrum and second-order correlation function in the quantum dot systems. The existence of Mollow triplets and photon antibunching are strongly depend on these external agents.
Effects of external fields, dimension and polarization on the resonance fluorescence of quantum dots
Vaseghi, B.; Razavi, S. M.
2017-02-01
In this paper simultaneous effects of external electric and magnetic fields, dimension and polarization on the resonance fluorescence spectrum and photon statistics of a spherical quantum dot with parabolic confinement are investigated. With special attention to the optical scattering processes resonance fluorescence spectrum and second-order correlation function are calculated and plotted for different external parameters. Our results show the occurrence of resonance fluorescence similar to atomic systems and considerable effects of external fields, quantum confinement and light polarization on the resonance fluorescence spectrum and second-order correlation function in the quantum dot systems. The existence of Mollow triplets and photon antibunching are strongly depend on these external agents.
Ultrafast Terahertz Dynamics and Switching in Quantum Dots
DEFF Research Database (Denmark)
Turchinovich, Dmitry; Hoffmann, Matthias C.
2012-01-01
carrier release from the QDs with (sub-)picosecond time resolution, using optical pump–THz probe measurements. In the second part of this chapter we investigate the direct manipulation of the quantum confinement potential of the QDs by an electric field of a strong THz pulse. The resulting THz......-driven quantum-confined Stark effect leads to a strong modulation of a ground-state optical absorption in the QDs. Dynamically, such a THz-induced electro-absorption modulation in QDs (near-)instantaneously follows the absolute value of the electric field of the THz pulse, providing the capability for Tbit......In this Chapter we describe the experimental studies of ultrafast carrier dynamics and all-optical switching in semiconductor quantum dots (QDs) using ultrafast terahertz (THz) techniques. In the first part of this chapter we describe the studies of carrier capture into the QDs, and thermionic...
Colloidal Quantum-Dot Photodetectors Exploiting Multiexciton Generation
Sukhovatkin, V.
2009-06-18
Multiexciton generation (MEG) has been indirectly observed in colloidal quantum dots, both in solution and the solid state, but has not yet been shown to enhance photocurrent in an optoelectronic device. Here, we report a class of solution-processed photoconductive detectors, sensitive in the ultraviolet, visible, and the infrared, in which the internal gain is dramatically enhanced for photon energies Ephoton greater than 2.7 times the quantum-confined bandgap Ebandgap. Three thin-film devices with different quantum-confined bandgaps (set by the size of their constituent lead sulfide nanoparticles) show enhancement determined by the bandgap-normalized photon energy, Ephoton/Ebandgap, which is a clear signature of MEG. The findings point to a valuable role for MEG in enhancing the photocurrent in a solid-state optoelectronic device. We compare the conditions on carrier excitation, recombination, and transport for photoconductive versus photovoltaic devices to benefit from MEG.
Quantum Dots in Photonic Crystal Waveguides
DEFF Research Database (Denmark)
Sollner, Immo Nathanael
This Thesis is focused on the study of quantum electrodynamics in photonic crystal waveguides. We investigate the interplay between a single quantum dot and the fundamental mode of the photonic crystal waveguide. We demonstrate experimental coupling eciencies for the spontaneous emission...... into the mode exceeding 98% for emitters spectrally close to the band-edge of the waveguide mode. In addition we illustrate the broadband nature of the underlying eects, by obtaining coupling eciencies above 90% for quantum dots detuned from the band edge by as far as 20nm. These values are in good agreement...... quantum-dot-waveguide coupling. Such a structure is ideally suited for a number of applications in quantum information processing and among others we propose an on-chip spin-photon interface, a single photon transistor, and a deterministic cNOT gate....
Quantum Dots in Photonic Crystal Waveguides
DEFF Research Database (Denmark)
Sollner, Immo Nathanael
This Thesis is focused on the study of quantum electrodynamics in photonic crystal waveguides. We investigate the interplay between a single quantum dot and the fundamental mode of the photonic crystal waveguide. We demonstrate experimental coupling eciencies for the spontaneous emission...... into the mode exceeding 98% for emitters spectrally close to the band-edge of the waveguide mode. In addition we illustrate the broadband nature of the underlying eects, by obtaining coupling eciencies above 90% for quantum dots detuned from the band edge by as far as 20nm. These values are in good agreement...... quantum-dot-waveguide coupling. Such a structure is ideally suited for a number of applications in quantum information processing and among others we propose an on-chip spin-photon interface, a single photon transistor, and a deterministic cNOT gate....
Electronic Quantum Confinement in Cylindrical Potential Well
Baltenkov, A S
2016-01-01
The effects of quantum confinement on the momentum distribution of electrons confined within a cylindrical potential well have been analyzed. The motivation is to understand specific features of the momentum distribution of electrons when the electron behavior is completely controlled by the parameters of a non-isotropic potential cavity. It is shown that studying the solutions of the wave equation for an electron confined in a cylindrical potential well offers the possibility to analyze the confinement behavior of an electron executing one- or two-dimensional motion in the three-dimensional space within the framework of the same mathematical model. Some low-lying electronic states with different symmetries have been considered and the corresponding wave functions have been calculated; the behavior of their nodes and their peak positions with respect to the parameters of the cylindrical well has been analyzed. Additionally, the momentum distributions of electrons in these states have been calculated. The limi...
Molecule-induced quantum confinement in single-walled carbon nanotube
Hida, Akira; Ishibashi, Koji
2015-04-01
A method of fabricating quantum-confined structures with single-walled carbon nanotubes (SWNTs) has been developed. Scanning tunneling spectroscopy revealed that a parabolic confinement potential appeared when collagen model peptides were attached to both ends of an individual SWNT via the formation of carboxylic anhydrides. On the other hand, the confinement potential was markedly changed by yielding the peptide bonds between the SWNT and the collagen model peptides. Photoluminescence spectroscopy measurements showed that a type-II quantum dot was produced in the obtained heterostructure.
Energy Technology Data Exchange (ETDEWEB)
Robert, C., E-mail: cedric.robert@insa.rennes.fr [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Thanh, T. Nguyen; Létoublon, A.; Perrin, M.; Cornet, C.; Levallois, C.; Jancu, J.M.; Even, J. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France); Balocchi, A.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse (France); Durand, O.; Le Corre, A. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France)
2013-08-31
AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments. - Highlights: ► An active zone is proposed for a pseudomorphic laser structure on Si. ► Cladding layers are proposed for a pseudomorphic laser structure on Si. ► The AlGaP alloy is studied by X-ray diffraction and spectroscopic ellipsometry. ► InGaAs/GaP quantum dots are studied by scanning tunnelling microscopy. ► InGaAs/GaP quantum dots are studied by time-resolved photoluminescence.
Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array
Hensgens, T.; Fujita, T.; Janssen, L.; Li, Xiao; van Diepen, C. J.; Reichl, C.; Wegscheider, W.; Das Sarma, S.; Vandersypen, L. M. K.
2017-08-01
Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.
Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array.
Hensgens, T; Fujita, T; Janssen, L; Li, Xiao; Van Diepen, C J; Reichl, C; Wegscheider, W; Das Sarma, S; Vandersypen, L M K
2017-08-02
Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.
Inter-dot coupling effects on transport through correlated parallel coupled quantum dots
Indian Academy of Sciences (India)
Shyam Chand; G Rajput; K C Sharma; P K Ahluwalia
2009-05-01
Transport through symmetric parallel coupled quantum dot system has been studied, using non-equilibrium Green function formalism. The inter-dot tunnelling with on-dot and inter-dot Coulomb repulsion is included. The transmission coefficient and Landaur–Buttiker like current formula are shown in terms of internal states of quantum dots. The effect of inter-dot tunnelling on transport properties has been explored. Results, in intermediate inter-dot coupling regime show signatures of merger of two dots to form a single composite dot and in strong coupling regime the behaviour of the system resembles the two decoupled dots.
A spatially indirect exciton in vertically coupled quantum dots : 1/Q-expansion
Lozovik, YE; Mur, VD; Narozhny, NB; Petrosyan, AN
2004-01-01
A spatially indirect exciton in vertically coupled quantum dots is considered with the use of 1/Q-expansion, where Q is the dimensionless quantum parameter determined by the ratio of characteristic Coulomb energy of electron-hole interaction to the energy of one-particle transition in a confining po
Advancements in the Field of Quantum Dots
Mishra, Sambeet; Tripathy, Pratyasha; Sinha, Swami Prasad.
2012-08-01
Quantum dots are defined as very small semiconductor crystals of size varying from nanometer scale to a few micron i.e. so small that they are considered dimensionless and are capable of showing many chemical properties by virtue of which they tend to be lead at one minute and gold at the second minute.Quantum dots house the electrons just the way the electrons would have been present in an atom, by applying a voltage. And therefore they are very judiciously given the name of being called as the artificial atoms. This application of voltage may also lead to the modification of the chemical nature of the material anytime it is desired, resulting in lead at one minute to gold at the other minute. But this method is quite beyond our reach. A quantum dot is basically a semiconductor of very tiny size and this special phenomenon of quantum dot, causes the band of energies to change into discrete energy levels. Band gaps and the related energy depend on the relationship between the size of the crystal and the exciton radius. The height and energy between different energy levels varies inversely with the size of the quantum dot. The smaller the quantum dot, the higher is the energy possessed by it.There are many applications of the quantum dots e.g. they are very wisely applied to:Light emitting diodes: LEDs eg. White LEDs, Photovoltaic devices: solar cells, Memory elements, Biology : =biosensors, imaging, Lasers, Quantum computation, Flat-panel displays, Photodetectors, Life sciences and so on and so forth.The nanometer sized particles are able to display any chosen colour in the entire ultraviolet visible spectrum through a small change in their size or composition.
Quantum-dot-in-perovskite solids
Ning, Zhijun
2015-07-15
© 2015 Macmillan Publishers Limited. All rights reserved. Heteroepitaxy - atomically aligned growth of a crystalline film atop a different crystalline substrate - is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned \\'dots-in-a-matrix\\' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.
Phonons in Quantum-Dot Quantum Well
Institute of Scientific and Technical Information of China (English)
QINGuo-Yi
2004-01-01
Phonon modes of A1As/GaAs/A1As and GaAs/A1As/metal Pb quantum-dot quantum wells (QDQW's) with the whole scale up to 90 AО are calculated by using valence force field model (VFFM) based on group theory.Their optical frequency spectra are divided into two nonoverlapping bands, the AlAs-like band and the GaAs-like band,originated from and having frequency interval inside the bulk AlAs optical band and bulk GaAs optical band, respectively.The GaAs-LO (Г)-like modes of QDQW's that have maximum bulk GaAs-LO (Г) parentages in all modes covering thewhole frequency region and all symmetries have always A1 symmetry. Its frequency is controllable by adjusting thestructure parameters. In A1As/GaAs/A1As, it may be controlled to meet any designed frequency in GaAs-like band.The results on GaAs/A1As/metal Pb QDQW's show the same effect of reducing in interface optical phonons by using the metal/semiconductor interface revealed ever by macroscopic model The frequency spectra in both GaAs-like andAlAs-like optical phonon bands are independent of the thickness of Pb shell as long as the thickness of Pb shell is no less than 5 AО Defects at metal/A1As interface have significant influence to AlAs-like optical modes but have only minor influence to GaAs-like optical modes. All these results are important for the studying of the e-ph interaction in QD structures.
Phonons in Quantum-Dot Quantum Well
Institute of Scientific and Technical Information of China (English)
QIN Guo-Yi
2004-01-01
Phonon modes of AlAs/GaAs/AlAs and GaAs/AlAs/metal Pb quantum-dot quantum wells (QDQW's)with the whole scale up to 90 A are calculated by using valence force field model (VFFM) based on group theory.Their optical frequency spectra are divided into two nonoverlapping bands, the AMs-like band and the GaAs-like band,originated from and having frequency interval inside the bulk AlAs optical band and bulk GaAs optical band, respectively.The GaAs-LO (F)-like modes of QDQW's that have maximum bulk GaAs-LO (F) parentages in all modes covering the whole frequency region and all symmetries have always A1 symmetry. Its frequency is controllable by adjusting the structure parameters. In AlAs/GaAs/AlAs, it may be controlled to meet any designed frequency in GaAs-like band.The results on GaAs/AMs/metal Pb QDQW's show the same effect of reducing in interface optical phonons by using the metal/semiconductor interface revealed ever by macroscopic model. The frequency spectra in both GaAs-like and AlAs-like optical phonon bands are independent of the thickness of Pb shell as long as the thickness of Pb shell is no less than 5 A. Defects at metal/AlAs interface have significant influence to AMs-like optical modes but have only minor influence to GaAs-like optical modes. All these results are important for the studying of the e-ph interaction in QD structures.
Confinement Physics in Quantum Chromodynamics
Suganuma, H; Amemiya, K; Tanaka, A; Suganuma, Hideo; Ichie, Hiroko; Amemiya, Kazuhisa; Tanaka, Atsunori
1998-01-01
We study the confinement physics in QCD in the maximally abelian (MA) gauge using the SU(2) lattice QCD, based on the dual-superconductor picture. In the MA gauge, off-diagonal gluon components are forced to be small, and the off-diagonal angle variable $\\chi_\\mu(s)$ tends to be random. Within the random-variable approximation for $\\chi_\\mu(s)$, we analytically prove the perimeter law of the off-diagonal gluon contribution to the Wilson loop in the MA gauge, which leads to abelian dominance on the string tension. To clarify the origin of abelian dominance for the long-range physics, we study the charged-gluon propagator in the MA gauge using the lattice QCD, and find that the effective mass $m_{ch} \\simeq 0.9 {\\rm GeV}$ of the charged gluon is induced by the MA gauge fixing. In the MA gauge, there appears the macroscopic network of the monopole world-line covering the whole system, which would be identified as monopole condensation at a large scale. To prove monopole condensation in the field-theoretical mann...
Linear and nonlinear intraband optical properties of ZnO quantum dots embedded in SiO2 matrix
Directory of Open Access Journals (Sweden)
Deepti Maikhuri
2012-03-01
Full Text Available In this work we investigate some optical properties of semiconductor ZnO spherical quantum dot embedded in an amorphous SiO2 dielectric matrix. Using the framework of effective mass approximation, we have studied intraband S-P, and P-D transitions in a singly charged spherical ZnO quantum dot. The optical properties are investigated in terms of the linear and nonlinear photoabsorption coefficient, the change in refractive index, and the third order nonlinear susceptibility and oscillator strengths. Using the parabolic confinement potential of electron in the dot these parameters are studied with the variation of the dot size, and the energy and intensity of incident radiation. The photoionization cross sections are also obtained for the different dot radii from the initial ground state of the dot. It is found that dot size, confinement potential, and incident radiation intensity affects intraband optical properties of the dot significantly.
Quantum analysis of plasmonic coupling between quantum dots and nanoparticles
Ahmad, SalmanOgli
2016-10-01
In this study, interaction between core-shells nanoparticles and quantum dots is discussed via the full-quantum-theory method. The electromagnetic field of the nanoparticles is derived by the quasistatic approximation method and the results for different regions of the nanoparticles are quantized from the time-harmonic to the wave equation. Utilizing the optical field quantization, the nanoparticles' and quantum dots' deriving amplitudes contributing to the excitation waves are determined. In the current model, two counterpropagating waves with two different frequencies are applied. We derived the Maxwell-Bloch equations from the Heisenberg-Langevin equations; thus the nanoparticles-quantum dots interaction is perused. Moreover, by full quantum analyzing of the analytical expression, the quantum-plasmonic coupling relation and the Purcell factor are achieved. We show that the spontaneous emission of quantum dots can be dramatically manipulated by engineering the plasmon-plasmon interaction in the core-shells nanoparticles. This issue is a very attractive point for designing a wide variety of quantum-plasmonic sensors. Through the investigation of the nanoparticle plasmonic interaction effects on absorbed power, the results show that the nanoparticles' and quantum dots' absorption saturation state can be switched to each other just by manipulation of their deriving amplitudes. In fact, we manage the interference between the two waves' deriving amplitudes just by the plasmonic interactions effect.
Electromechanical transition in quantum dots
Micchi, G.; Avriller, R.; Pistolesi, F.
2016-09-01
The strong coupling between electronic transport in a single-level quantum dot and a capacitively coupled nanomechanical oscillator may lead to a transition towards a mechanically bistable and blocked-current state. Its observation is at reach in carbon-nanotube state-of-art experiments. In a recent publication [Phys. Rev. Lett. 115, 206802 (2015), 10.1103/PhysRevLett.115.206802] we have shown that this transition is characterized by pronounced signatures on the oscillator mechanical properties: the susceptibility, the displacement fluctuation spectrum, and the ring-down time. These properties are extracted from transport measurements, however the relation between the mechanical quantities and the electronic signal is not always straightforward. Moreover the dependence of the same quantities on temperature, bias or gate voltage, and external dissipation has not been studied. The purpose of this paper is to fill this gap and provide a detailed description of the transition. Specifically we find (i) the relation between the current-noise and the displacement spectrum; (ii) the peculiar behavior of the gate-voltage dependence of these spectra at the transition; (iii) the robustness of the transition towards the effect of external fluctuations and dissipation.
Charge transport through a semiconductor quantum dot-ring nanostructure.
Kurpas, Marcin; Kędzierska, Barbara; Janus-Zygmunt, Iwona; Gorczyca-Goraj, Anna; Wach, Elżbieta; Zipper, Elżbieta; Maśka, Maciej M
2015-07-08
Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified by additional gating. In this paper we consider a concentric dot-ring nanostructure (DRN) and show that its transport properties can be drastically modified due to the unique geometry. We calculate the dc current through a DRN in the Coulomb blockade regime and show that it can efficiently work as a single-electron transistor (SET) or a current rectifier. In both cases the transport characteristics strongly depend on the details of the confinement potential. The calculations are carried out for low and high bias regime, the latter being especially interesting in the context of current rectification due to fast relaxation processes.
Quantum control study of ultrafast optical responses in semiconductor quantum dot devices.
Huang, Jung Y; Lin, Chien Y; Liu, Wei-Sheng; Chyi, Jen-Inn
2014-12-15
Two quantum control spectroscopic techniques were applied to study InAs quantum dot (QD) devices, which contain different strain-reducing layers. By adaptively control light matter interaction, a delayed resonant response from the InAs QDs was found to be encoded into the optimal phase profile of ultrafast optical pulse used. We verified the delayed resonant response to originate from excitons coupled to acoustic phonons of InAs QDs with two-dimensional coherent spectroscopy. Our study yields valuable dynamical information that can deepen our understanding of the coherent coupling process of exciton in the quantum-confined systems.
Laser driven impurity states in two-dimensional quantum dots and quantum rings
Laroze, D.; Barseghyan, M.; Radu, A.; Kirakosyan, A. A.
2016-11-01
The hydrogenic donor impurity states in two-dimensional GaAs/Ga0.7Al0.3As quantum dot and quantum ring have been investigated under the action of intense laser field. A laser dressed effect on both electron confining and electron-impurity Coulomb interaction potentials has been considered. The single electron energy spectrum and wave functions have been found using the effective mass approximation and exact diagonalization technique. The accidental degeneracy of the impurity states have been observed for different positions of the impurity and versus values of the laser field parameter. The obtained theoretical results indicate a novel opportunity to tune the performance of quantum dots and quantum rings and to control their specific properties by means of laser field.
Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots
El Afandy, Rami
2011-07-07
Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical
Dirac gap-induced graphene quantum dot in an electrostatic potential
Giavaras, G.; Nori, Franco
2011-04-01
A spatially modulated Dirac gap in a graphene sheet leads to charge confinement, thus enabling a graphene quantum dot to be formed without the application of external electric and magnetic fields [G. Giavaras and F. Nori, Appl. Phys. Lett. 97, 243106 (2010)]. This can be achieved provided the Dirac gap has a local minimum in which the states become localized. In this work, the physics of such a gap-induced dot is investigated in the continuum limit by solving the Dirac equation. It is shown that gap-induced confined states couple to the states introduced by an electrostatic quantum well potential. Hence the region in which the resulting hybridized states are localized can be tuned with the potential strength, an effect which involves Klein tunneling. The proposed quantum dot may be used to probe quasirelativistic effects in graphene, while the induced confined states may be useful for graphene-based nanostructures.
Dot-in-Well Quantum-Dot Infrared Photodetectors
Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung
2008-01-01
Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material
Multi-band silicon quantum dots embedded in an amorphous matrix of silicon carbide
Chang, Geng-rong; Ma, Fei; Ma, Da-yan; Xu, Ke-wei
2010-11-01
Silicon quantum dots embedded in an amorphous matrix of silicon carbide were realized by a magnetron co-sputtering process and post-annealing. X-ray photoelectron spectroscopy, glancing x-ray diffraction, Raman spectroscopy and high-resolution transmission electron microscopy were used to characterize the chemical composition and the microstructural properties. The results show that the sizes and size distribution of silicon quantum dots can be tuned by changing the annealing atmosphere and the atom ratio of silicon and carbon in the matrix. A physicochemical mechanism is proposed to demonstrate this formation process. Photoluminescence measurements indicate a multi-band configuration due to the quantum confinement effect of silicon quantum dots with different sizes. The PL spectra are further widened as a result of the existence of amorphous silicon quantum dots. This multi-band configuration would be extremely advantageous in improving the photoelectric conversion efficiency of photovoltaic solar cells.
Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots
Energy Technology Data Exchange (ETDEWEB)
Klimov, V.; McBranch, D.; Schwarz, C.
1998-08-10
Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.
Heavily Doped Semiconductor Nanocrystal Quantum Dots
National Research Council Canada - National Science Library
David Mocatta; Guy Cohen; Jonathan Schattner; Oded Millo; Eran Rabani; Uri Banin
2011-01-01
... of fundamental understanding of this heavily doped limit under strong quantum confinement. We developed a method to dope semiconductor nanocrystals with metal impurities, enabling control of the band gap and Fermi energy...
Storage of energy in confined quantum systems
Malbouisson, A. P. C.
2002-01-01
Using the non-perturbative method of {\\it dressed} states introduced in previous publications [N.P.Andion, A.P.C. Malbouisson and A. Mattos Neto, J.Phys.{\\bf A34}, 3735, (2001); G. Flores-Hidalgo, A.P.C. Malbouisson, Y.W. Milla, Phys. Rev. A, {\\bf 65}, 063314 (2002)], we study the evolution of a confined quantum mechanical system embedded in a {\\it ohmic} environment. Our approach furnishes a theoretical mechanism to control inhibition of the decay of excited quantum systems in cavities, in b...
Extra-dimensional confinement of quantum particles
Hedin, Eric R
2016-01-01
A basic theoretical framework is developed in which elementary particles have a component of their wave function extending into higher spatial dimensions. This model postulates an extension of the Schrodinger equation to include a 4th and 5th spatial component. A higher-dimensional simple harmonic oscillator confining potential localizes particles into 3-d space, characterizing the brane tension which confines Standard Model particles to the sub-manifold. Quantum effects allow a non-zero probability for a particle's evanescent existence in the higher dimensions, and suggest an experimental test for the validity of this model via particles being temporarily excited into the first excited state of the extra-dimensional potential well, in which their probability of existing in 3-d space transiently drops to zero. Several consistency checks of the outcomes of this extra-dimensional model are included in this paper. Among the outcomes of this model are: a match with the quantum phenomenon of zitterbewegung; the pr...
Xiao, Jing-Lin
2009-03-01
In an asymmetry quantum dot, the properties of the electron, which is strongly coupled with phonon, were investigated. The variational relations of the first internal excited state energy, the excitation energy and the frequency of transition spectral line between the first internal excited state and the ground state of the electron which is strongly coupled with phonon in an asymmetry quantum dot with the transverse and longituainal effective confinement length of quantum dot and the electron-phonon coupling strength were studied by using a linear combination operator and the unitary transformation methods. Numerical calculations for the variational relations of the first internal excited state energy, the excitation energy and the frequency of transition spectral line between the first internal excited state and the ground state of the electron which is strongly coupled with phonon in an asymmetry quantum dot with the transverse and longituainal effective confinement length of quantum dot and the electron-phonon coupling strength were performed and the results show that the first internal excited state energy, the excitation energy and the frequency of transition spectral line between the first internal excited state and the ground state of the electron which is strongly coupled with phonon in an asymmetry quantum dot will strongly increase with decreasing the transverse and longitudinal effective confinement length. The first internal excited state energy of the electron which is strongly coupled with phonon in an asymmetry quantum dot will decrease with increasing the electron-phonon coupling strength. The excitation energy and the frequency of transition spectral line between the first internal excited state and the ground state of the electron which is strongly coupled with phonon in an asymmetry quantum dot will increase with increasing the electron-phonon coupling strength.
Scalable quantum computer architecture with coupled donor-quantum dot qubits
Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey
2014-08-26
A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.
UV Nano-Lights: Nonlinear Quantum Dot-Plasmon Coupling
2014-08-01
method is also applicable to bare nanoparticles in polar solvents. 15. SUBJECT TERMS Quantum Dots, Nonlinear Optical Materials , Energy...TERMS Quantum Dots, Nonlinear Optical Materials , Energy Conservation, Up-conversion 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT
Inorganic passivation and doping control in colloidal quantum dot photovoltaics
Hoogland, Sjoerd H.
2012-01-01
We discuss strategies to reduce midgap trap state densities in colloidal quantum dot films and requirements to control doping type and magnitude. We demonstrate that these improvements result in colloidal quantum dot solar cells with certified 7.0% efficiency.
A voltage tunable quantum dot photodetector for terahertz detection
Energy Technology Data Exchange (ETDEWEB)
Wu Wei; Dey, Dibyendu; Mohseni, Hooman, E-mail: wwu@u.northwestern.ed, E-mail: hmohseni@ece.northwestern.ed [Bio-inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering and Computer Science, Northwestern University, Evanston IL 60208 (United States)
2010-04-21
A voltage tunable quantum dot (QD) photodetector for terahertz detection based on intersublevel transitions is proposed. The intersublevels are formed by the lateral electrical confinement applied on quantum wells and the transitions between them can be strongly tuned by the confinement. Under normal incidence, the peak detection wavelengths can be tuned from {approx}50 to {approx}90 {mu}m (6.0 to {approx}3.3 THz) with a gate voltage range of -5 to -2 V. The peak absorption coefficient of detection is in the order of 10{sup 3} cm{sup -1} at 77 K, and the peak detectivity of the photodetector can reach {approx}10{sup 9} cm{sup 2} Hz{sup 1/2} W{sup -1}. The proposed approach has the advantage of forming a high uniformity of QD effective sizes and provides an alternative way to detect terahertz radiation.
Quantum dot spin coherence governed by a strained nuclear environment
Stockill, R.; Le Gall, C.; Matthiesen, C.; Huthmacher, L.; Clarke, E.; Hugues, M.; Atatüre, M.
2016-01-01
The interaction between a confined electron and the nuclei of an optically active quantum dot provides a uniquely rich manifestation of the central spin problem. Coherent qubit control combines with an ultrafast spin–photon interface to make these confined spins attractive candidates for quantum optical networks. Reaching the full potential of spin coherence has been hindered by the lack of knowledge of the key irreversible environment dynamics. Through all-optical Hahn echo decoupling we now recover the intrinsic coherence time set by the interaction with the inhomogeneously strained nuclear bath. The high-frequency nuclear dynamics are directly imprinted on the electron spin coherence, resulting in a dramatic jump of coherence times from few tens of nanoseconds to the microsecond regime between 2 and 3 T magnetic field and an exponential decay of coherence at high fields. These results reveal spin coherence can be improved by applying large magnetic fields and reducing strain inhomogeneity. PMID:27615704
Coherent transport through interacting quantum dots
Energy Technology Data Exchange (ETDEWEB)
Hiltscher, Bastian
2012-10-05
The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in
Coherence and dephasing in self-assembled quantum dots
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Leosson, K.; Birkedal, Dan
2003-01-01
We measured dephasing times in InGaAl/As self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot...... coherence. The inferred homogeneous line widths are significantly smaller than the line widths usually observed in the photoluminescence from single quantum dots indicating an additional inhomogeneours broadening mechanism in the latter....
Modulation Response of Semiconductor Quantum Dot Nanocavity Lasers
DEFF Research Database (Denmark)
Lorke, Michael; Nielsen, Torben Roland; Mørk, Jesper
2011-01-01
The modulation response of quantum-dot based nanocavity devices is investigated using a semiconductor theory. We show that high modulation bandwidth is achieved even in the presence of inhomogeneous broadening of the quantum dot ensemble.......The modulation response of quantum-dot based nanocavity devices is investigated using a semiconductor theory. We show that high modulation bandwidth is achieved even in the presence of inhomogeneous broadening of the quantum dot ensemble....
Carbon quantum dots and a method of making the same
Energy Technology Data Exchange (ETDEWEB)
Zidan, Ragaiy; Teprovich, Joseph A.; Washington, Aaron L.
2017-08-22
The present invention is directed to a method of preparing a carbon quantum dot. The carbon quantum dot can be prepared from a carbon precursor, such as a fullerene, and a complex metal hydride. The present invention also discloses a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride and a polymer containing a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride.
LUMINESCENCE OF CADMIUM SULFIDE QUANTUM DOTS IN FLUOROPHOSPHATE GLASSES
Z. O. Lipatova; E. V. Kolobkova; V. A. Aseev
2015-01-01
Cadmium sulfide quantum dots are perspective materials in optics, medicine, biology and optoelectronics. Fluorophosphate glasses, doped with cadmium sulfide quantum dots, were examined in the paper. Heat treatment led to the formation of quantum dots with diameters equal to 2.8 nm, 3.0 nm and 3.8 nm. In view of such changes in the quantum dots size the fundamental absorption edge shift and the luminescence band are being displaced to the long wavelengths. Luminescence lifetime has been fou...
Design of tunneling injection quantum dot lasers
Institute of Scientific and Technical Information of China (English)
JIA Guo-zhi; YAO Jiang-hong; SHU Yong-chun; WANG Zhan-guo
2007-01-01
To implement high quality tunneling injection quantum dot lasers,effects of primary factors on performance of the tunneling injection quantum dot lasers were investigated. The considered factors were tunneling probability,tunneling time and carriers thermal escape time from the quantum well. The calculation results show that with increasing of the ground-state energy level in quantum well,the tunneling probability increases and the tunneling time decreases,while the thermal escape time decreases because the ground-state energy levelis shallower. Longitudinal optical phonon-assisted tunneling can be an effective method to solve the problem that both the tunneling time and the thermal escape time decrease simultaneously with the ground-state energy level increasing in quantum well.
Variational Path-Integral Study on Bound Polarons in Parabolic Quantum Dots and Wires
Institute of Scientific and Technical Information of China (English)
CHEN Qing-Hu; WANG Zhuang-Bing; WU Fu-Li; LUO Meng-Bo; RUAN Yong-Hong; JIAO Zheng-Kuan
2001-01-01
The expression of the ground-state energy of an electron coupled simultaneously with a Coulomb potential and a longitudinal-optical phonon field in parabolic quantum dots and wires is derived within the framework of Feynman variational path-integral theory. We obtain a general result with arbitrary electron-phonon coupling constant,Coulomb binding parameters, and confining potential strength, which could be used for further numerical calculation of polaron properties. Moreover, it is shown that all the previous path-integral formulae for free polarons,bound polarons, and polarons confined in parabolic quantum dots and wires can be recovered in the present formalism.
A spin-density-functional study of quantum dots and rings
Lin, J C
2002-01-01
We present a spin-density-functional theoretical (SDFT) study of the electronic states in GaAs quantum dots embedded in AlGaAs substrates. The SDFT allows for a systematic study of the joint effects of confinement, Coulomb interactions and spin for realistic systems. We model the system as electrons confined in a finite cylindrical dot. The screening due to the gate electrodes is also taken into account. The method predicts the electron addition energy spectra that are in agreement with experiments. We also apply the SDFT to GaAs quantum rings and find that they too show shell structures in the additional energy spectra.
Angiogenic Profiling of Synthesized Carbon Quantum Dots.
Shereema, R M; Sruthi, T V; Kumar, V B Sameer; Rao, T P; Shankar, S Sharath
2015-10-20
A simple method was employed for the synthesis of green luminescent carbon quantum dots (CQDs) from styrene soot. The CQDs were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared, and Raman spectroscopy. The prepared carbon quantum dots did not show cellular toxicity and could successfully be used for labeling cells. We also evaluated the effects of carbon quantum dots on the process of angiogenesis. Results of a chorioallantoic membrane (CAM) assay revealed the significant decrease in the density of branched vessels after their treatment with CQDs. Further application of CQDs significantly downregulated the expression levels of pro-angiogenic growth factors like VEGF and FGF. Expression of VEGFR2 and levels of hemoglobin were also significantly lower in CAMs treated with CQDs, indicating that the CQDs inhibit angiogenesis. Data presented here also show that CQDs can selectively target cancer cells and therefore hold potential in the field of cancer therapy.
Bright infrared LEDs based on colloidal quantum-dots
Sun, Liangfeng
2013-01-01
Record-brightness infrared LEDs based on colloidal quantum-dots have been achieved through control of the spacing between adjacent quantum-dots. By tuning the size of quantum-dots, the emission wavelengths can be tuned between 900nm and 1650nm. © 2013 Materials Research Society.
Ihly, Rachelle
This thesis explores the understanding of the chemistry and physics of colloidal quantum dots for practical solar energy photoconversion. Solar cell devices that make use of PbS quantum dots generally rely on constant and unchanged optical properties such that band gap energies remain tuned within the device. The design and development of unique experiments to ascertain mechanisms of optical band gap shifts occurring in PbS quantum dot thin-films exposed to air are discussed. The systematic study of the absorption properties of PbS quantum dot films exposed to air, heat, and UV illumination as a function of quantum dot size has been described. A method to improve the air-stability of films with atomic layer deposition of alumina is demonstrated. Encapsulation of quantum dot films using a protective layer of alumina results in quantum dot solids that maintain tuned absorption for 1000 hours. This thesis focuses on the use of atomic force microscopy and electrical variants thereof to study the physical and electrical characteristics of quantum dot arrays. These types of studies have broad implications in understanding charge transport mechanisms and solar cell device operation, with a particular emphasis on quantum dot transistors and solar cells. Imaging the channel potential of a PbSe quantum dot thin-film in a transistor showed a uniform distribution of charge coinciding with the transistor current voltage characteristics. In a second study, solar cell device operation of ZnO/PbS heterojunction solar cells was investigated by scanning active cross-sections with Kelvin probe microscopy as a function of applied bias, illumination and device architecture. This technique directly provides operating potential and electric field profiles to characterize drift and diffusion currents occurring in the device. SKPM established a field-free region occurring in the quantum dot layer, indicative of diffusion-limited transport. These results provide the path to optimization of
Spin-orbit effects in carbon-nanotube double quantum dots
DEFF Research Database (Denmark)
Weiss, S; Rashba, E I; Kuemmeth, Ferdinand;
2010-01-01
We study the energy spectrum of symmetric double quantum dots in narrow-gap carbon nanotubes with one and two electrostatically confined electrons in the presence of spin-orbit and Coulomb interactions. Compared to GaAs quantum dots, the spectrum exhibits a much richer structure because of the spin...... between the dots. For the two-electron regime, the detailed structure of the spin-orbit split energy spectrum is investigated as a function of detuning between the quantum dots in a 22-dimensional Hilbert space within the framework of a single-longitudinal-mode model. We find a competing effect......-orbit interaction that couples the electron's isospin to its real spin through two independent coupling constants. In a single dot, both constants combine to split the spectrum into two Kramers doublets while the antisymmetric constant solely controls the difference in the tunneling rates of the Kramers doublets...
Mid-infrared quantum dot emitters utilizing planar photonic crystal technology.
Energy Technology Data Exchange (ETDEWEB)
Subramania,Ganapathi Subramanian; Lyo, Sungkwun Kenneth; Cederberg, Jeffrey George; Passmore, Brandon Scott; El-Kady, Ihab Fathy; Shaner, Eric Arthur
2008-09-01
The three-dimensional confinement inherent in InAs self-assembled quantum dots (SAQDs) yields vastly different optical properties compared to one-dimensionally confined quantum well systems. Intersubband transitions in quantum dots can emit light normal to the growth surface, whereas transitions in quantum wells emit only parallel to the surface. This is a key difference that can be exploited to create a variety of quantum dot devices that have no quantum well analog. Two significant problems limit the utilization of the beneficial features of SAQDs as mid-infrared emitters. One is the lack of understanding concerning how to electrically inject carriers into electronic states that allow optical transitions to occur efficiently. Engineering of an injector stage leading into the dot can provide current injection into an upper dot state; however, to increase the likelihood of an optical transition, the lower dot states must be emptied faster than upper states are occupied. The second issue is that SAQDs have significant inhomogeneous broadening due to the random size distribution. While this may not be a problem in the long term, this issue can be circumvented by using planar photonic crystal or plasmonic approaches to provide wavelength selectivity or other useful functionality.
Institute of Scientific and Technical Information of China (English)
Jia Bo-Yong; Yu Zhong-Yuan; Liu Yu-Min; Han Li-Hong; Yao Wen-Jie; Feng Hao; Ye Han
2011-01-01
Electronic structures of the artificial molecule comprising two truncated pyramidal quantum dots vertically coupled and embedded in the matrix are theoretically analysed via the finite element method. When the quantum dots are completely aligned, the electron energy levels decrease with the horizontally applied electric field. However, energy levels may have the maxima at non-zero electric field if the dots are staggered by a distance of several nanometers in the same direction of the electric field. In addition to shifting the energy levels, the electric field can also manipulate the electron wavefunctions confined in the quantum dots, in company with the non-perfect alignment.
Resonant tunneling in graphene pseudomagnetic quantum dots.
Qi, Zenan; Bahamon, D A; Pereira, Vitor M; Park, Harold S; Campbell, D K; Neto, A H Castro
2013-06-12
Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric strain conditions can be explored to select the exit channel of the y-junction.
Cadmium telluride quantum dots advances and applications
Donegan, John
2013-01-01
Optical Properties of Bulk and Nanocrystalline Cadmium Telluride, Núñez Fernández and M.I. VasilevskiyAqueous Synthesis of Colloidal CdTe Nanocrystals, V. Lesnyak, N. Gaponik, and A. EychmüllerAssemblies of Thiol-Capped CdTe Nanocrystals, N. GaponikFörster Resonant Energy Transfer in CdTe Nanocrystal Quantum Dot Structures, M. Lunz and A.L. BradleyEmission of CdTe Nanocrystals Coupled to Microcavities, Y.P. Rakovich and J.F. DoneganBiological Applications of Cadmium Telluride Semiconductor Quantum Dots, A. Le Cign
Bilayer graphene quantum dot defined by topgates
Energy Technology Data Exchange (ETDEWEB)
Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W., E-mail: hans.w.schumacher@ptb.de [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)
2014-06-21
We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.
Charge transport in semiconductor nanocrystal quantum dots
Mentzel, Tamar Shoshana
In this thesis, we study charge transport in arrays of semiconductor nanocrystal quantum dots. Nanocrystals are synthesized in solution, and an organic ligand on the surface of the nanocrystal creates a potential barrier that confines charges in the nanocrystal. Optical absorption measurements reveal discrete electronic energy levels in the nanocrystals resulting from quantum confinement. When nanocrystals are deposited on a surface, they self-assemble into a close-packed array forming a nanocrystal solid. We report electrical transport measurements of a PbSe nanocrystal solid that serves as the channel of an inverted field-effect transistor. We measure the conductance as a function of temperature, source-drain bias and. gate voltage. The data indicates that holes are the majority carriers; the Fermi energy lies in impurity states in the bandgap of the nanocrystal; and charges hop between the highest occupied valence state in the nanocrystals (the 1S h states). At low source-drain voltages, the activation energy for hopping is given by the energy required to generate holes in the 1Sh state plus activation over barriers resulting from site disorder. The barriers from site disorder are eliminated with a sufficiently high source-drain bias. From the gate effect, we extract the Thomas-Fermi screening length and a density of states that is consistent with the estimated value. We consider variable-range hopping as an alternative model, and find no self-consistent evidence for it. Next, we employ charge sensing as an alternative to current measurements for studying transport in materials with localized sites. A narrow-channel MOSFET serves as a charge sensor because its conductance is sensitive to potential fluctuations in the nearby environment caused by the motion of charge. In particular, it is sensitive to the fluctuation of single electrons at the silicon-oxide interface within the MOSFET. We pattern a strip of amorphous germanium within 100 nm of the transistor. The
High resolution STEM of quantum dots and quantum wires
DEFF Research Database (Denmark)
Kadkhodazadeh, Shima
2013-01-01
This article reviews the application of high resolution scanning transmission electron microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs). Different imaging and analytical techniques in STEM are introduced and key examples of their application to QDs and QWRs...
A Polaron in a Quantum Dot Quantum Well
Institute of Scientific and Technical Information of China (English)
ZHANG Li; XIE HongJing; CHEN ChuanYu
2002-01-01
The polaron effect in a quantum dot quantum well (QDQW)system is investigated by using the perturbation method. Both the bound electron states outside and inside the shell well are taken into account . Numerical calculation on the CdS/HgS QDQW shows that the phonon correction to the electron ground state energy is quite significant and cannot be neglected.
Sargent, Edward H.
2006-02-01
We apply discoveries in nanoscience towards applications relevant to health, environment, security, and connectedness. A materials fundamental to our research is the quantum dot. Each quantum dot is a particle of semiconductor only a few nanometers in diameter. These semiconductor nanoparticles confine electrons to within their characteristic wavelength. Thus, just as changing the length of a guitar string changes the frequency of sound produced, so too does changing the size of a quantum dot alter the frequency - hence energy - the electron can adopt. As a result, quantum dots are tunable matter (Fig. 2). We work with colloidal quantum dots, nanoparticles produced in, and processed from, solution. They can be coated onto nearly anything - a semiconductor substrate, a window, a wall, fabric. Compared to epitaxially-grown semiconductors used to make optical detectors, lasers, and modulators, they are cheap, safe to work with, and easy to produce. Much of our work with quantum dots involves infrared light - its measurement, production, modulation, and harnessing. While there exists an abundance of work in colloidal quantum dots active in the visible, there are fewer results in the infrared. The wavelengths between 1000 and 2000 nm are nonetheless of great practical importance: half of the sun's power reaching the earth lies in this wavelength range; 'biological windows' in which tissue is relatively transparent and does not emit background light (autofluorescence) exist in the infrared; fiber-optic networks operate at 1.3 and 1.5 um.
Energy Technology Data Exchange (ETDEWEB)
Weber, Carsten
2008-07-01
This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and
Charge Transfer Dynamics from Photoexcited Semiconductor Quantum Dots
Zhu, Haiming; Yang, Ye; Wu, Kaifeng; Lian, Tianquan
2016-05-01
Understanding photoinduced charge transfer from nanomaterials is essential to the many applications of these materials. This review summarizes recent progress in understanding charge transfer from quantum dots (QDs), an ideal model system for investigating fundamental charge transfer properties of low-dimensional quantum-confined nanomaterials. We first discuss charge transfer from QDs to weakly coupled acceptors within the framework of Marcus nonadiabatic electron transfer (ET) theory, focusing on the dependence of ET rates on reorganization energy, electronic coupling, and driving force. Because of the strong electron-hole interaction, we show that ET from QDs should be described by the Auger-assisted ET model, which is significantly different from ET between molecules or from bulk semiconductor electrodes. For strongly quantum-confined QDs on semiconductor surfaces, the coupling can fall within the strong coupling limit, in which case the donor-acceptor interaction and ET properties can be described by the Newns-Anderson model of chemisorption. We also briefly discuss recent progress in controlling charge transfer properties in quantum-confined nanoheterostructures through wavefunction engineering and multiple exciton dissociation. Finally, we identify a few key areas for further research.
Probing silicon quantum dots by single-dot techniques
Sychugov, Ilya; Valenta, Jan; Linnros, Jan
2017-02-01
Silicon nanocrystals represent an important class of non-toxic, heavy-metal free quantum dots, where the high natural abundance of silicon is an additional advantage. Successful development in mass-fabrication, starting from porous silicon to recent advances in chemical and plasma synthesis, opens up new possibilities for applications in optoelectronics, bio-imaging, photovoltaics, and sensitizing areas. In this review basic physical properties of silicon nanocrystals revealed by photoluminescence spectroscopy, lifetime, intensity trace and electrical measurements on individual nanoparticles are summarized. The fabrication methods developed for accessing single Si nanocrystals are also reviewed. It is concluded that silicon nanocrystals share many of the properties of direct bandgap nanocrystals exhibiting sharp emission lines at low temperatures, on/off blinking, spectral diffusion etc. An analysis of reported results is provided in comparison with theory and with direct bandgap material quantum dots. In addition, the role of passivation and inherent interface/matrix defects is discussed.
Electron and hole transfer from indium phosphide quantum dots.
Blackburn, J L; Selmarten, D C; Ellingson, R J; Jones, M; Micic, O; Nozik, A J
2005-02-24
Electron- and hole-transfer reactions are studied in colloidal InP quantum dots (QDs). Photoluminescence quenching and time-resolved transient absorption (TA) measurements are utilized to examine hole transfer from photoexcited InP QDs to the hole acceptor N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD) and electron transfer to nanocrystalline titanium dioxide (TiO2) films. Core-confined holes are effectively quenched by TMPD, resulting in a new approximately 4-ps component in the TA decay. It is found that electron transfer to TiO2 is primarily mediated through surface-localized states on the InP QDs.
On the interpretation of wave function overlaps in quantum dots
DEFF Research Database (Denmark)
Stobbe, Søren; Hvam, Jørn Märcher; Lodahl, Peter
2011-01-01
that the electron and the hole are located at the same point or region in space, i.e., they must coincide spatially to recombine. Here, we show that this interpretation is not correct even loosely speaking. By general mathematical considerations we compare the envelope wave function overlap, the exchange overlap......The spontaneous emission rate of excitons strongly confined in quantum dots (QDs) is proportional to the overlap integral of electron and hole envelope wave functions. A common and intuitive interpretation of this result is that the spontaneous emission rate is proportional to the probability...... compare our qualitative predictions with recent measurements of the wave function overlap and find good agreement....
Pulsed-laser micropatterned quantum-dot array for white light source
Wang, Sheng-Wen; Lin, Huang-Yu; Lin, Chien-Chung; Kao, Tsung Sheng; Chen, Kuo-Ju; Han, Hau-Vei; Li, Jie-Ru; Lee, Po-Tsung; Chen, Huang-Ming; Hong, Ming-Hui; Kuo, Hao-Chung
2016-03-01
In this study, a novel photoluminescent quantum dots device with laser-processed microscale patterns has been demonstrated to be used as a white light emitting source. The pulsed laser ablation technique was employed to directly fabricate microscale square holes with nano-ripple structures onto the sapphire substrate of a flip-chip blue light-emitting diode, confining sprayed quantum dots into well-defined areas and eliminating the coffee ring effect. The electroluminescence characterizations showed that the white light emission from the developed photoluminescent quantum-dot light-emitting diode exhibits stable emission at different driving currents. With a flexibility of controlling the quantum dots proportions in the patterned square holes, our developed white-light emitting source not only can be employed in the display applications with color triangle enlarged by 47% compared with the NTSC standard, but also provide the great potential in future lighting industry with the correlated color temperature continuously changed in a wide range.
Local Gate Control of a Carbon Nanotube Double Quantum Dot
2016-04-04
Nanotube Double Quantum Dot N. Mason,*† M. J. Biercuk,* C. M. Marcus† We have measured carbon nanotube quantum dots with multiple electro- static gates and...used the resulting enhanced control to investigate a nano- tube double quantum dot. Transport measurements reveal honeycomb charge stability diagrams...This ability to control electron interactions in the quantum regime in a molecular conductor is important for applications such as quantum
Imaging and Manipulating Energy Transfer Among Quantum Dots at Individual Dot Resolution.
Nguyen, Duc; Nguyen, Huy A; Lyding, Joseph W; Gruebele, Martin
2017-06-27
Many processes of interest in quantum dots involve charge or energy transfer from one dot to another. Energy transfer in films of quantum dots as well as between linked quantum dots has been demonstrated by luminescence shift, and the ultrafast time-dependence of energy transfer processes has been resolved. Bandgap variation among dots (energy disorder) and dot separation are known to play an important role in how energy diffuses. Thus, it would be very useful if energy transfer could be visualized directly on a dot-by-dot basis among small clusters or within films of quantum dots. To that effect, we report single molecule optical absorption detected by scanning tunneling microscopy (SMA-STM) to image energy pooling from donor into acceptor dots on a dot-by-dot basis. We show that we can manipulate groups of quantum dots by pruning away the dominant acceptor dot, and switching the energy transfer path to a different acceptor dot. Our experimental data agrees well with a simple Monte Carlo lattice model of energy transfer, similar to models in the literature, in which excitation energy is transferred preferentially from dots with a larger bandgap to dots with a smaller bandgap.
Germanium quantum dots: Optical properties and synthesis
Heath, James R.; Shiang, J. J.; Alivisatos, A. P.
1994-07-01
Three different size distributions of Ge quantum dots (≳200, 110, and 60 Å) have been synthesized via the ultrasonic mediated reduction of mixtures of chlorogermanes and organochlorogermanes (or organochlorosilanes) by a colloidal sodium/potassium alloy in heptane, followed by annealing in a sealed pressure vessel at 270 °C. The quantum dots are characterized by transmission electron microscopy, x-ray powder diffraction, x-ray photoemission, infrared spectroscopy, and Raman spectroscopy. Colloidal suspensions of these quantum dots were prepared and their extinction spectra are measured with ultraviolet/visible (UV/Vis) and near infrared (IR) spectroscopy, in the regime from 0.6 to 5 eV. The optical spectra are correlated with a Mie theory extinction calculation utilizing bulk optical constants. This leads to an assignment of three optical features to the E(1), E(0'), and E(2) direct band gap transitions. The E(0') transitions exhibit a strong size dependence. The near IR spectra of the largest dots is dominated by E(0) direct gap absorptions. For the smallest dots the near IR spectrum is dominated by the Γ25→L indirect transitions.
Nonlocal quantum cloning via quantum dots trapped in distant cavities
Institute of Scientific and Technical Information of China (English)
Yu Tao; Zhu Ai-Dong; Zhang Shou
2012-01-01
A scheme for implementing nonlocal quantum cloning via quantum dots trapped in cavities is proposed.By modulating the parameters of the system,the optimal 1 → 2 universal quantum cloning machine,1 → 2 phase-covariant cloning machine,and 1 → 3 economical phase-covariant cloning machine are constructed.The present scheme,which is attainable with current technology,saves two qubits compared with previous cloning machines.
Two Interacting Electrons in a Spherical Gaussian Confining Potential Quantum Well
Institute of Scientific and Technical Information of China (English)
XIE Wen-Fang
2004-01-01
Two-electron states of a three-dimensional spherical GaAs quantum dot (QD) with a Gaussian confining potential confinement are studied. Calculations are made by using the method of few-body physics within the effectivemass approximation. We have calculated the energy levels of single and triplet states as functions of the range and depth of the confining potential well in the spherical QDs. The same calculations performed with the parabolic approximation of the Gaussian potential lead to the results, which are qualitatively and quantitatively different.
Synthesis of CdSe quantum dots for quantum dot sensitized solar cell
Energy Technology Data Exchange (ETDEWEB)
Singh, Neetu, E-mail: singh.neetu1985@gmail.com; Kapoor, Avinashi [Department of Electronic Science, University of Delhi South Campus, New Delhi-110 021 (India); Kumar, Vinod [Department of Physics, University of the Free State, Bloemfontein, ZA9300 (South Africa); Mehra, R. M. [School of Engineering and Technology, Sharda University, Greater Noida-201 306, U.P. (India)
2014-04-24
CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.
Charged-Exciton Complexes in Quantum Dots
Institute of Scientific and Technical Information of China (English)
XIE Wen-Fang
2001-01-01
It is known experimentally that stable charged-exciton complexes can exist in low-dimensional semiconductor nanostructures. Much less is known about the properties of such charged-exciton complexes since three-body problems are very difficult to be solved, even numerically. Here we introduce the correlated hyperspherical harmonics as basis functions to solve the hyperangular equation for negatively and positively charged excitons (trions) in a harmonic quantum dot. By using this method, we have calculated the energy spectra of the low-lying states of a charged exciton as a function of the radius of quantum dot. Based on symmetry analysis, the level crossover as the dot radius increases can be fully explained as the results of symmetry constraint.``
Ground state of excitons in quantum-dot quantum-well nanoparticles:stochastic variational method
Institute of Scientific and Technical Information of China (English)
Zhang Heng; Shi Jun-Jie
2004-01-01
Within the framework of effective mass approximation, the ground state of excitons confined in spherical core-shell quantum-dot quantum-well (QDQW) nanoparticles is solved by using the stochastic variational method, in which the finite band offset and the heavy (light) hole exciton states are considered. The calculated lse-lsh transition energies for the chosen CdS/HgS/CdS QDQW samples are in good agreement with the experimental measurements. Moreover,some previous theoretical results are improved.
Saturating optical resonances in quantum dots
Nair, Selvakumar V.; Rustagi, K. C.
Optical bistability in quantum dots, recently proposed by Chemla and Miller, is studied in a two-resonance model. We show that for such classical electromagnetic resonances the applicability of a two-resonance model is far more restrictive than for those in atoms.
System and method for making quantum dots
Bakr, Osman M.
2015-05-28
Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.
Quantum dot waveguides: ultrafast dynamics and applications
DEFF Research Database (Denmark)
Chen, Yaohui; Mørk, Jesper
2009-01-01
In this paper we analyze, based on numerical simulations, the dynamics of semiconductor devices incorporating quantum dots (QDs). In particular we emphasize the unique ultrafast carrier dynamics occurring between discrete QD bound states, and its influence on QD semiconductor optical amplifiers...... (SOAs). Also the possibility of realizing an all-optical regenerator by incorporating a QD absorber section in an amplifier structure is discussed....
Electron Scattering in Intrananotube Quantum Dots
Buchs, G.; Bercioux, D.; Ruffieux, P.; Gröning, P.; Grabert, H.; Gröning, O.
2009-01-01
Intratube quantum dots showing particle-in-a-box-like states with level spacings up to 200 meV are realized in metallic single-walled carbon nanotubes by means of low dose medium energy Ar+ irradiation. Fourier-transform scanning tunneling spectroscopy compared to results of a Fabry-Perot electron r
Producing Quantum Dots by Spray Pyrolysis
Banger, Kulbinder; Jin, Michael H.; Hepp, Aloysius
2006-01-01
An improved process for making nanocrystallites, commonly denoted quantum dots (QDs), is based on spray pyrolysis. Unlike the process used heretofore, the improved process is amenable to mass production of either passivated or non-passivated QDs, with computer control to ensure near uniformity of size.
Enabling biomedical research with designer quantum dots
Tomczak, N.; Janczewski, D.; Dorokhin, D.V.; Han, M-Y; Vancso, G.J.; Navarro, Melba; Planell, Josep A.
2012-01-01
Quantum Dots (QDs) are a new class of semiconductor nanoparticulate luminophores, which are actively researched for novel applications in biology and nanomedicine. In this review, the recent progress in the design and applications of QD labels for in vitro and in vivo imaging of cells is presented.
Single Molecule Applications of Quantum Dots
DEFF Research Database (Denmark)
Rasmussen, Thomas Elmelund; Jauffred, Liselotte; Brewer, Jonathan R.
2013-01-01
Fluorescent nanocrystals composed of semiconductor materials were first introduced for biological applications in the late 1990s. The focus of this review is to give a brief survey of biological applications of quantum dots (QDs) at the single QD sensitivity level. These are described as follows: 1...
Optical Properties of Quantum-Dot-Doped Liquid Scintillators
Aberle, C; Weiss, S; Winslow, L
2013-01-01
Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO.
Optical properties of quantum-dot-doped liquid scintillators
Aberle, C.; Li, J. J.; Weiss, S.; Winslow, L.
2013-10-01
Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO.
Binding Energies of Negatively Charged Donors in a Gaussian Potential Quantum Dot
Institute of Scientific and Technical Information of China (English)
XIE Wen-Fang
2005-01-01
@@ We investigate a negatively charged donor centre (D-) trapped by a quantum dot, which is subjected to a Gaussian potential confinement. Calculations are carried out by using the method of numerical diagonalization of Hamiltonian within the effective-mass approximation. The dependence of the ground state of the negatively charged donor on the dot size and the potential depth is studied. The same calculations performed with the parabolic approximation of the Gaussian potential lead to the results that are qualitatively and quantitatively different.
Optical levitation of microdroplet containing a single quantum dot
Minowa, Yosuke; Ashida, Masaaki
2014-01-01
Semiconductor nanocrystals, also known as quantum dots (QDs), are key ingredients in current quantum optics experiments. They serve as quantum emitters and memories and have tunable energy levels that depend not only on the material but also, through the quantum confinement effect, on the size. The resulting strongly confined electron and hole wave functions lead to large transition dipole moments, which opens a path to ultra strong coupling and even deep strong coupling between light and matter. Such efficient coupling requires the precise positioning of the QD in an optical cavity with a high quality factor and small mode volume, such as micro-Fabry--Perot cavity, whispering-gallery-mode microcavity, or photonic-crystal cavity. However, the absence of a technique for free-space positioning has limited the further research on QD-based cavity quantum electrodynamics. In this paper, we present a technique to overcome this challenge by demonstrating the optical levitation or trapping in helium gas of a single Q...
Quantum Dot Cavity-QED in the Presence of Strong Electron-Phonon Interactions
Wilson-Rae, I
2001-01-01
A quantum dot strongly coupled to a single high finesse optical microcavity mode constitutes a new fundamental system for quantum optics. Here, the effect of exciton-phonon interactions on reversible quantum-dot cavity coupling is analysed without making Born-Markov approximation. The analysis is based on techniques that have been used to study the ``spin boson'' Hamiltonian. Observability of vacuum-Rabi splitting depends on the strength and the frequency dependence of the spectral density function characterizing the interactions with phonons, both of which can be influenced by phonon confinement.
Directory of Open Access Journals (Sweden)
Sofia Paulo
2016-08-01
Full Text Available Graphene and carbon quantum dots have extraordinary optical and electrical features because of their quantum confinement properties. This makes them attractive materials for applications in photovoltaic devices (PV. Their versatility has led to their being used as light harvesting materials or selective contacts, either for holes or electrons, in silicon quantum dot, polymer or dye-sensitized solar cells. In this review, we summarize the most common uses of both types of semiconducting materials and highlight the significant advances made in recent years due to the influence that synthetic materials have on final performance.
Binding Energy of an Off-Center D- in a Spherical Quantum Dot
Institute of Scientific and Technical Information of China (English)
LIU Dong-Ming; XIE Wen-Fang
2009-01-01
Using the method of matrix diagonalization, we investigate an off-center D- in a spherical quantum dot (QD) subjected to a parabolic potential confinement. We discuss the effect of the position of an impurity in the QD on the binding energy of the D- system. Furthermore, we compare a negatively charged donor D- with a neutral donor D0 confined by a spherical QD with a parabolic potential. The results have dearly demonstrate the so-called quantum size effect. The binding energy/s dependent on the confining potential hω0 and the impurity ion distance D.
Probing the quantum-classical connection with open quantum dots
Ferry, D. K.; Akis, R.; Brunner, R.
2015-10-01
Open quantum dots provide a natural system in which to study both classical and quantum features of transport. From the classical point of view these dots possess a mixed phase space which yields families of closed, regular orbits as well as an expansive sea of chaos. As a closed test bed, they provide a natural system with a very rich set of eigen-states. When coupled to the environment through a pair of quantum point contacts, each of which passes several modes, the original quantum environment evolves into a set of decoherent and coherent states, which eventually couple to the classical states discussed above. The manner of this connection is governed strongly by decoherence theory. The remaining coherent states possess all the properties of pointer states. Here, we discuss the quantum-classical connection and how it appears within the experimental world.
The influence of electric field on a parabolic quantum dot qubit
Institute of Scientific and Technical Information of China (English)
Yin Ji-Wen; Xiao Jing-Lin; Yu Yi-Fu; Wang Zi-Wu
2009-01-01
This paper calculates the time evolution of the quantum mechanical state of an electron by using variational method of Pckar type on the condition of electric-LO-phonon strong coupling in a parabolic quantum dot. It obtains the eigenenergies of the ground state and the first-excited state, the eigenfunctious of the ground state and the first- excited state This system in a quantum dot may be employed as a two-level quantum system qubit. The superposition state electron density oscillates in the quantum dot with a period when the electron is in the superposition state of the ground and the first-excited state. It studies the influence of the electric field on the eigenenergies of the ground state, the first-excited state and the period of oscillation at the different electron-LO-phonon coupling constant and the different confinement length.
Ligand-assisted fabrication, structure, and luminescence properties of Fe:ZnSe quantum dots
Energy Technology Data Exchange (ETDEWEB)
Xie, Ruishi, E-mail: rxie@foxmail.com; Zhang, Xingquan; Liu, Haifeng
2014-03-15
Highlights: • A green route is developed for synthesis of water-soluble and fluorescent Fe:ZnSe quantum dots. • Tunable luminescence intensity can be realized with different ligand-to-Zn molar ratios. • The obtained quantum dots are in the so-called “quantum confinement regime”. -- Abstract: Here, we report a synthetic route for highly emissive Fe:ZnSe quantum dots in aqueous media using the mercaptoacetic acid ligand as stabilizing agent. The structural, morphological, componential, and optical properties of the resulting quantum dots were explored by the X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray spectroscopy, inductively coupled plasma mass spectrometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, photoluminescence and UV–visible absorption spectroscopies. The average crystallite size was calculated to be about ca., 4.0 nm using the Scherrer equation, which correlates well with the value obtained from the transmission electron microscopy analysis. The obtained water-soluble Fe:ZnSe quantum dots in the so-called “quantum confinement regime” are spherical shaped, possess the cubic sphalerite crystal structure, and exhibit tunable luminescence properties. The presence of mercaptoacetic acid on the surface of Fe:ZnSe quantum dots was confirmed by the Fourier transform infrared spectroscopy measurements. As the ligand/Zn molar ratio increases from 1.3 to 2.8, there is little shift in the absorption peak of the Fe:ZnSe sample, indicating that the particle size of the obtained quantum dots is not changed during the synthetic process. The photoluminescence quantum yield of the as-prepared water-soluble Fe:ZnSe quantum dots can be up to 39%. The molar ratio of ligand-to-Zn plays a crucial role in determining the final luminescence properties of the resulting quantum dots, and the maximum PL intensity appears as the ligand-to-Zn molar ratio is 2.2. In addition, the underlying mechanism for
Avazzadeh, Z.; Bahramiyan, H.; Khordad, R.; Mohammadi, S. A.
2016-04-01
In this study, the diamagnetic susceptibility of an off-center hydrogenic donor impurity confined by pyramid and cone-like quantum dots has been investigated. To this end, the finite-element method and the Arnoldi algorithm are used to find energy eigenvalues and eigenvectors of the systems. Then, the effect of impurity position and dot size has been investigated on the diamagnetic susceptibility. We have found that the diamagnetic susceptibility has a maximum around the impurity position 4nm for two quantum dots. The diamagnetic susceptibility in the cone-like quantum dot is smaller than that in the pyramid quantum dot. Numerical studies reveal that the diamagnetic susceptibility depends strongly on the geometry of the dot.
Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells
Directory of Open Access Journals (Sweden)
Martin A. Green
2007-08-01
Full Text Available We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4Ã¢Â€Â‰nm dot with increasing detection wavelength.
Energy Technology Data Exchange (ETDEWEB)
Goswami, Mrinmoy [Department of Physics, National Institute of Technology, Durgapur, 713209 (India); Ghosh, Ranajit, E-mail: ghosh.ranajit@gmail.com [CSIR-Central Mechanical Engineering Research Institute, Durgapur, 713209 (India); Maruyama, Takahiro [Department of Applied Chemistry, Meijo University, Nagoya, 4688502 (Japan); Meikap, Ajit Kumar [Department of Physics, National Institute of Technology, Durgapur, 713209 (India)
2016-02-28
Graphical abstract: - Highlights: • A new kind of polyaniline/carbon nanotube/CdS quantum dot composites have been synthesized via in-situ polymerization of aniline monomer. • A degree of increase in conductivity. • Size-dependent optical properties of CdS quantum dots have been observed. - Abstract: A new kind of polyaniline/carbon nanotube/CdS quantum dot composites have been developed via in-situ polymerization of aniline monomer in the presence of dispersed CdS quantum dots (size: 2.7–4.8 nm) and multi-walled carbon nanotubes (CNT), which exhibits enhanced optical and electrical properties. The existences of 1st order, 2nd order, and 3rd order longitudinal optical phonon modes, strongly indicate the high quality of synthesized CdS quantum dots. The occurrence of red shift of free exciton energy in photoluminescence is due to size dependent quantum confinement effect of CdS. The conductivity of the composites (for example PANI/CNT/CdS (2 wt.% CdS)) is increased by about 7 of magnitude compared to that of pure PANI indicating a charge transfer between CNT and polymer via CdS quantum dots. This advanced material has a great potential for high-performance of electro-optical applications.
Efficient Luminescence from Perovskite Quantum Dot Solids
Kim, Younghoon
2015-11-18
© 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals\\' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.
Local Quantum Dot Tuning on Photonic Crystal Chips
Faraon, Andrei; Fushman, Ilya; Stoltz, Nick; Petroff, Pierre; Vuckovic, Jelena
2007-01-01
Quantum networks based on InGaAs quantum dots embedded in photonic crystal devices rely on QDs being in resonance with each other and with the cavities they are embedded in. We developed a new technique based on temperature tuning to spectrally align different quantum dots located on the same chip. The technique allows for up to 1.8nm reversible on-chip quantum dot tuning.
High-resolution photoluminescence studies of single semiconductor quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis
2000-01-01
Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has...... developed in the study of single quantum dots, characterized by sharp atomic-like transition lines revealing their zero-dimensional density of states. Substantial information about the fundamental properties of individual quantum dots, as well as their interactions with other dots and the host lattice, can...
Sensitivity of quantum-dot semiconductor lasers to optical feedback.
O'Brien, D; Hegarty, S P; Huyet, G; Uskov, A V
2004-05-15
The sensitivity of quantum-dot semiconductor lasers to optical feedback is analyzed with a Lang-Kobayashi approach applied to a standard quantum-dot laser model. The carriers are injected into a quantum well and are captured by, or escape from, the quantum dots through either carrier-carrier or phonon-carrier interaction. Because of Pauli blocking, the capture rate into the dots depends on the carrier occupancy level in the dots. Here we show that different carrier capture dynamics lead to a strong modification of the damping of the relaxation oscillations. Regions of increased damping display reduced sensitivity to optical feedback even for a relatively large alpha factor.
Coupling of single quantum dots to a photonic crystal waveguide
DEFF Research Database (Denmark)
Lund-Hansen, Toke; Stobbe, Søren; Julsgaard, Brian
. An alternative approach is to couple the quantum dot directly to the propagating mode of a photonic waveguide. We demonstrate the coupling of single quantum dots to a photonic crystal waveguide using time-resolved spontaneous emission measurements. A pronounced effect is seen in the decay rates of dots coupled...
Coupling of single quantum dots to a photonic crystal waveguide
DEFF Research Database (Denmark)
Lund-Hansen, Toke; Stobbe, Søren; Julsgaard, Brian;
. An alternative approach is to couple the quantum dot directly to the propagating mode of a photonic waveguide. We demonstrate the coupling of single quantum dots to a photonic crystal waveguide using time-resolved spontaneous emission measurements. A pronounced effect is seen in the decay rates of dots coupled...
Dynamic dipole-dipole interactions between excitons in quantum dots of different sizes
DEFF Research Database (Denmark)
Matsueda, Hideaki; Leosson, Kristjan; Xu, Zhangcheng;
2004-01-01
A model of the resonance dynamic dipole-dipole interaction between excitons confined in quantum dots (QDs) of different sizes at close enough distance is given in terms of parity inheritance and exchange of virtual photons. Microphotoluminescence spectra of GaAs-AlGaAs coupled QDs are proposed to...
Coherent versus incoherent dynamics in InAs quantum-dot active wave guides
DEFF Research Database (Denmark)
Borri, Paola; Langbein, W.; Hvam, Jørn Märcher;
2001-01-01
Coherent dynamics measured by time-resolved four-wave mixing is compared to incoherent population dynamics measured by differential transmission spectroscopy on the ground-state transition at room temperature of two types of InAs-based quantum dots with different confinement energies. The measure...
Fluorescence from Individual PbS Quantum Dots
Peterson, Jeffrey
2005-03-01
Due to their extremely large electron, hole, and exciton Bohr radii, PbS quantum dots (QDs) can achieve levels of quantum confinement not accessible to III-V and II-VI QDs. Thus, the strong confinement regime is attained for relatively large particles, which may mitigate deleterious surface effects and impart novel properties. PbS QDs are also optically active in the near-infrared region, making these materials potentially useful for telecommunications and biotechnological applications. We will present investigations of single PbS QD fluorescence using far-field microscopy. PbS QDs were synthesized with a size-tunable exciton absorbance ranging between 765 nm and 1800 nm. Of particular note is the ability to synthesize highly luminescent, small radii QDs, allowing for fluorescence detection with high sensitivity silicon CCDs. Upon spincoating QDs onto glass substrates at densities near the single dot level, we observe fluorescence intermittency, or “blinking” and a narrowing of the fluorescence spectra relative to the ensemble, both hallmarks of single fluorophores. The fluorescence energy irreversibly blue shifts with longer integration times and higher excitation intensities, indicative of a photo-induced degradation. Photobleaching of the majority of PbS QDs occurred in 30 sec. An analysis of the blinking statistics will be discussed.
Binding energies of an exciton in a Gaussian potential quantum dot
Institute of Scientific and Technical Information of China (English)
Xie Wen-Fang
2006-01-01
In this paper, an exciton trapped by a Gaussian confining potential quantum dot has been investigated. Calculations are made by using the method of numerical diagonalization of Hamiltonian in the effective-mass approximation. The dependences of binding energies of the ground state and the first excited state on the size of the confining potential and the strength of the magnetic field are analysed explicitly.
Second-order nonlinear susceptibility in quantum dot structure under applied electric field
Abdullah, M.; Noori, Farah T. Mohammed; Al-Khursan, Amin H.
2015-06-01
A model for quantum dot (QD) subbands, when the dots are in the form of quantum disks, under applied electric field was stated. Then, subbands of dots with different disk radii and heights were calculated under applied field. The competition between the shift due to confinement by field and the size was shown for subbands. Second-order nonlinear susceptibility in quantum dots (QDs) was derived using density matrix theory which is, then, simulated using the calculated subbands. Both interband (IB) and intersubband (ISB) transitions were discussed. High second-order susceptibility in QDs was predicted. The results show a reduction in the susceptibility with the applied field while the peak wavelength was mainly relates to energy difference between subbands. A good match between theory and laboratory experiments was observed. Laboratory experiments at terahertz region might be possible using valence intersubband which is important in many device applications.
Mitigation of quantum dot cytotoxicity by microencapsulation.
Directory of Open Access Journals (Sweden)
Amelia Romoser
Full Text Available When CdSe/ZnS-polyethyleneimine (PEI quantum dots (QDs are microencapsulated in polymeric microcapsules, human fibroblasts are protected from acute cytotoxic effects. Differences in cellular morphology, uptake, and viability were assessed after treatment with either microencapsulated or unencapsulated dots. Specifically, QDs contained in microcapsules terminated with polyethylene glycol (PEG mitigate contact with and uptake by cells, thus providing a tool to retain particle luminescence for applications such as extracellular sensing and imaging. The microcapsule serves as the "first line of defense" for containing the QDs. This enables the individual QD coating to be designed primarily to enhance the function of the biosensor.
Quantum Computation Using Optically Coupled Quantum Dot Arrays
Pradhan, Prabhakar; Anantram, M. P.; Wang, K. L.; Roychowhury, V. P.; Saini, Subhash (Technical Monitor)
1998-01-01
A solid state model for quantum computation has potential advantages in terms of the ease of fabrication, characterization, and integration. The fundamental requirements for a quantum computer involve the realization of basic processing units (qubits), and a scheme for controlled switching and coupling among the qubits, which enables one to perform controlled operations on qubits. We propose a model for quantum computation based on optically coupled quantum dot arrays, which is computationally similar to the atomic model proposed by Cirac and Zoller. In this model, individual qubits are comprised of two coupled quantum dots, and an array of these basic units is placed in an optical cavity. Switching among the states of the individual units is done by controlled laser pulses via near field interaction using the NSOM technology. Controlled rotations involving two or more qubits are performed via common cavity mode photon. We have calculated critical times, including the spontaneous emission and switching times, and show that they are comparable to the best times projected for other proposed models of quantum computation. We have also shown the feasibility of accessing individual quantum dots using the NSOM technology by calculating the photon density at the tip, and estimating the power necessary to perform the basic controlled operations. We are currently in the process of estimating the decoherence times for this system; however, we have formulated initial arguments which seem to indicate that the decoherence times will be comparable, if not longer, than many other proposed models.
Semiconductor quantum dot scintillation under gamma-ray irradiation
Energy Technology Data Exchange (ETDEWEB)
Letant, S E; Wang, T
2006-08-23
We recently demonstrated the ability of semiconductor quantum dots to convert alpha radiation into visible photons. In this letter, we report on the scintillation of quantum dots under gamma-ray irradiation, and compare the energy resolution of the 59 keV line of Americium 241 obtained with our quantum dot-glass nanocomposite material to that of a standard sodium iodide scintillator. A factor 2 improvement is demonstrated experimentally and interpreted theoretically using a combination of energy-loss and photon transport models. These results demonstrate the potential of quantum dots for room-temperature gamma-ray detection, which has applications in medical imaging, environmental monitoring, as well as security and defense. Present technology in gamma radiation detection suffers from flexibility and scalability issues. For example, bulk Germanium provides fine energy resolution (0.2% energy resolution at 1.33 MeV) but requires operation at liquid nitrogen temperature. On the other hand, Cadmium-Zinc-Telluride is a good room temperature detector ( 1% at 662 keV) but the size of the crystals that can be grown is limited to a few centimeters in each direction. Finally, the most commonly used scintillator, Sodium Iodide (NaI), can be grown as large crystals but suffers from a lack of energy resolution (7% energy resolution at 662 keV). Recent advancements in nanotechnology6-10 have provided the possibility of controlling materials synthesis at the molecular level. Both morphology and chemical composition can now be manipulated, leading to radically new material properties due to a combination of quantum confinement and surface to volume ratio effects. One of the main consequences of reducing the size of semiconductors down to nanometer dimensions is to increase the energy band gap, leading to visible luminescence, which suggests that these materials could be used as scintillators. The visible band gap of quantum dots would also ensure both efficient photon counting
Coherent transport through interacting quantum dots
Energy Technology Data Exchange (ETDEWEB)
Hiltscher, Bastian
2012-10-05
The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in
Buljan, M.; Radić, N.; Sancho-Paramon, J.; Janicki, V.; Grenzer, J.; Bogdanović-Radović, I.; Siketić, Z.; Ivanda, M.; Utrobičić, A.; Hübner, R.; Weidauer, R.; Valeš, V.; Endres, J.; Car, T.; Jerčinović, M.; Roško, J.; Bernstorff, S.; Holy, V.
2015-02-01
We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.
Studies of silicon quantum dots prepared at different substrate temperatures
Al-Agel, Faisal A.; Suleiman, Jamal; Khan, Shamshad A.
2017-03-01
In this research work, we have synthesized silicon quantum dots at different substrate temperatures 193, 153 and 123 K at a fixed working pressure 5 Torr. of Argon gas. The structural studies of these silicon quantum dots have been undertaken using X-ray diffraction, Field Emission Scanning Electron Microscopy (FESEM) and High Resolution Transmission Electron Microscopy (HRTEM). The optical and electrical properties have been studied using UV-visible spectroscopy, Fourier transform infrared (FTIR) spectroscopy, Fluorescence spectroscopy and I-V measurement system. X-ray diffraction pattern of Si quantum dots prepared at different temperatures show the amorphous nature except for the quantum dots synthesized at 193 K which shows polycrystalline nature. FESEM images of samples suggest that the size of quantum dots varies from 2 to 8 nm. On the basis of UV-visible spectroscopy measurements, a direct band gap has been observed for Si quantum dots. FTIR spectra suggest that as-grown Si quantum dots are partially oxidized which is due exposure of as-prepared samples to air after taking out from the chamber. PL spectra of the synthesized silicon quantum dots show an intense peak at 444 nm, which may be attributed to the formation of Si quantum dots. Temperature dependence of dc conductivity suggests that the dc conductivity enhances exponentially by raising the temperature. On the basis above properties i.e. direct band gap, high absorption coefficient and high conductivity, these silicon quantum dots will be useful for the fabrication of solar cells.
Entrapment in phospholipid vesicles quenches photoactivity of quantum dots.
Generalov, Roman; Kavaliauskiene, Simona; Westrøm, Sara; Chen, Wei; Kristensen, Solveig; Juzenas, Petras
2011-01-01
Quantum dots have emerged with great promise for biological applications as fluorescent markers for immunostaining, labels for intracellular trafficking, and photosensitizers for photodynamic therapy. However, upon entry into a cell, quantum dots are trapped and their fluorescence is quenched in endocytic vesicles such as endosomes and lysosomes. In this study, the photophysical properties of quantum dots were investigated in liposomes as an in vitro vesicle model. Entrapment of quantum dots in liposomes decreases their fluorescence lifetime and intensity. Generation of free radicals by liposomal quantum dots is inhibited compared to that of free quantum dots. Nevertheless, quantum dot fluorescence lifetime and intensity increases due to photolysis of liposomes during irradiation. In addition, protein adsorption on the quantum dot surface and the acidic environment of vesicles also lead to quenching of quantum dot fluorescence, which reappears during irradiation. In conclusion, the in vitro model of phospholipid vesicles has demonstrated that those quantum dots that are fated to be entrapped in endocytic vesicles lose their fluorescence and ability to act as photosensitizers.
Entrapment in phospholipid vesicles quenches photoactivity of quantum dots
Directory of Open Access Journals (Sweden)
Generalov R
2011-09-01
Full Text Available Roman Generalov1,2, Simona Kavaliauskiene1, Sara Westrøm1, Wei Chen3, Solveig Kristensen2, Petras Juzenas11Department of Radiation Biology, Institute for Cancer Research, Norwegian Radium Hospital, Oslo University Hospital, Oslo, Norway; 2School of Pharmacy, University of Oslo, Oslo, Norway; 3Department of Physics, The University of Texas at Arlington, Arlington, TX, USAAbstract: Quantum dots have emerged with great promise for biological applications as fluorescent markers for immunostaining, labels for intracellular trafficking, and photosensitizers for photodynamic therapy. However, upon entry into a cell, quantum dots are trapped and their fluorescence is quenched in endocytic vesicles such as endosomes and lysosomes. In this study, the photophysical properties of quantum dots were investigated in liposomes as an in vitro vesicle model. Entrapment of quantum dots in liposomes decreases their fluorescence lifetime and intensity. Generation of free radicals by liposomal quantum dots is inhibited compared to that of free quantum dots. Nevertheless, quantum dot fluorescence lifetime and intensity increases due to photolysis of liposomes during irradiation. In addition, protein adsorption on the quantum dot surface and the acidic environment of vesicles also lead to quenching of quantum dot fluorescence, which reappears during irradiation. In conclusion, the in vitro model of phospholipid vesicles has demonstrated that those quantum dots that are fated to be entrapped in endocytic vesicles lose their fluorescence and ability to act as photosensitizers.Keywords: fluorescence lifetime, free radicals, liposomes, lipodots, reactive oxygen species
Single quantum dots fundamentals, applications, and new concepts
2003-01-01
This book reviews recent advances in the exciting and rapid growing field of semiconductor quantum dots by contributions from some of the most prominent researchers in the field. Special focus is given to the optical and electronic properties of single quantum dots due to their potential applications in devices operating with single electrons and/or single photons. This includes quantum dots in electric and magnetic fields, cavity-quantum electrodynamics, nonclassical light generation, and coherent optical control of excitons. Single Quantum Dots also addresses various growth techniques as well as potential device applications such as quantum dot lasers, and new concepts like a single-photon source, and a single quantum dot laser.
Mode Competition in Dual-Mode Quantum Dots Semiconductor Microlaser
Chusseau, Laurent; Viktorovitch, P; Letartre, Xavier
2013-01-01
This paper describes the modeling of quantum dots lasers with the aim of assessing the conditions for stable cw dual-mode operation when the mode separation lies in the THz range. Several possible models suited for InAs quantum dots in InP barriers are analytically evaluated, in particular quantum dots electrically coupled through a direct exchange of excitation by the wetting layer or quantum dots optically coupled through the homogeneous broadening of their optical gain. A stable dual-mode regime is shown possible in all cases when quantum dots are used as active layer whereas a gain medium of quantum well or bulk type inevitably leads to bistable behavior. The choice of a quantum dots gain medium perfectly matched the production of dual-mode lasers devoted to THz generation by photomixing.
Peptide-Decorated Tunable-Fluorescence Graphene Quantum Dots.
Sapkota, Bedanga; Benabbas, Abdelkrim; Lin, Hao-Yu Greg; Liang, Wentao; Champion, Paul; Wanunu, Meni
2017-03-22
We report here the synthesis of graphene quantum dots with tunable size, surface chemistry, and fluorescence properties. In the size regime 15-35 nm, these quantum dots maintain strong visible light fluorescence (mean quantum yield of 0.64) and a high two-photon absorption (TPA) cross section (6500 Göppert-Mayer units). Furthermore, through noncovalent tailoring of the chemistry of these quantum dots, we obtain water-stable quantum dots. For example, quantum dots with lysine groups bind strongly to DNA in solution and inhibit polymerase-based DNA strand synthesis. Finally, by virtue of their mesoscopic size, the quantum dots exhibit good cell permeability into living epithelial cells, but they do not enter the cell nucleus.
Principles of conjugating quantum dots to proteins via carbodiimide chemistry.
Song, Fayi; Chan, Warren C W
2011-12-09
The covalent coupling of nanomaterials to bio-recognition molecules is a critical intermediate step in using nanomaterials for biology and medicine. Here we investigate the carbodiimide-mediated conjugation of fluorescent quantum dots to different proteins (e.g., immunoglobulin G, bovine serum albumin, and horseradish peroxidase). To enable these studies, we developed a simple method to isolate quantum dot bioconjugates from unconjugated quantum dots. The results show that the reactant concentrations and protein type will impact the overall number of proteins conjugated onto the surfaces of the quantum dots, homogeneity of the protein-quantum dot conjugate population, quantum efficiency, binding avidity, and enzymatic kinetics. We propose general principles that should be followed for the successful coupling of proteins to quantum dots.
SU(4) Kondo entanglement in double quantum dot devices
Bonazzola, Rodrigo; Andrade, J. A.; Facio, Jorge I.; García, D. J.; Cornaglia, Pablo S.
2017-08-01
We analyze, from a quantum information theory perspective, the possibility of realizing an SU(4) entangled Kondo regime in semiconductor double quantum dot devices. We focus our analysis on the ground-state properties and consider the general experimental situation where the coupling parameters of the two quantum dots differ. We model each quantum dot with an Anderson-type Hamiltonian including an interdot Coulomb repulsion and tunnel couplings for each quantum dot to independent fermionic baths. We find that the spin and pseudospin entanglements can be made equal, and the SU(4) symmetry recovered, if the gate voltages are chosen in such a way that the average charge occupancies of the two quantum dots are equal, and the double occupancy on the double quantum dot is suppressed. We present density matrix renormalization group numerical results for the spin and pseudospin entanglement entropies, and analytical results for a simplified model that captures the main physics of the problem.
Coupling self-assembled quantum dots to nanostructures
Badolato, Antonio
Self-assembled quantum dot (QD) grown by molecular beam epitaxy implements the ultimate quantum confined structure in the solid-state. Because electrons are confined in all three dimensions, QDs have shown delta-function-like energy dependence of the density of states. The identification of QDs as artificial atoms has been proven by the observation of fundamental exciton emission with perfect photon antibunching and with a linewidth limited by spontaneous emission. As artificial atoms that can be monolithically integrated with other functional devices in the setting of semiconductor technology, QDs have been the source of inspiration of several novel quantum devices. Nonetheless, QD self-assemble on random nucleation sites, whereas many proposals require precise positioning of a single QD. In this thesis, two new elements of design and control for coupling single QDs to single nanostructure will be presented: (i) a technique to control ab-initio the site nucleation of a single QD and (ii) a deterministic approach to the coupling of single QDs to single nanocavity modes. Chapter 1 is dedicated to a theoretical overview of the QD system, first, as a solid-state heterostructure that confines electrons and, second, as an artificial atom interacting with confined photons. Chapter 2 presents a technique to grow highly ordered QD arrays by engineering subsurface periodic strain templates. This technique achieved almost perfect registering of single QDs into a two-dimensional lattice. In Chapter 3 a deterministic approach to the realization of solid-state cavity quantum electrodynamics (QED) systems is demonstrated. Based on a precise spatial and spectral matching between a single QD and a PC microcavity, this approach yielded cavity QED effects (such as Purcell effect) in all fabricated nanostructures.
A Surface Chemistry Approach to Enhancing Colloidal Quantum Dot Solids for Photovoltaics
Carey, Graham Hamilton
Colloidal quantum dot (CQD) photovoltaic devices have improved rapidly over the past decade of research. By taking advantage of the quantum confinement effect, solar cells constructed using films of infrared-bandgap nanoparticles are able to capture previously untapped ranges of the solar energy spectrum. Additionally, films are fabricated using simple, cheap, reproducible solution processing techniques, enabling the creation of low-cost, flexible photovoltaic devices. A key factor limiting the creation of high efficiency CQD solar cells is the short charge carrier diffusion length in films. Driven by a combination of limited carrier mobility, poor nanoparticle surface passivation, and the presence of unexamined electrically active impurities throughout the film, the poor diffusion length limits the active layer thickness in CQD solar cells, leading to lower-than-desired light absorption, and curtailing the photocurrent generated by such devices. This thesis seeks to address poor diffusion length by addressing each of the limiting factors in turn. Electrical transport in quantum dot solids is examined in the context of improved quantum dot packing; methods are developed to improve packing by using actively densifying components, or by dramatically lowering the volume change required between quantum dots in solution and in solid state. Quantum dot surface passivation is improved by introducing a crucial secondary, small halide ligand source, and by surveying the impact of the processing environment on the final quality of the quantum dot surface. A heretofore unidentified impurity present in quantum dot solids is identified, characterized, and chemically eliminated. Finally, lessons learned through these experiments are combined into a single, novel materials system, leading to quantum dot devices with a significantly improved diffusion length (enhanced from 70 to 230 nm). This enabled thick, high current density (30 mA cm -2, compared to typical values in the 20
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
Energy Technology Data Exchange (ETDEWEB)
Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tagliaferri, M. L. V. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Universit di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy); Vinet, M. [CEA/LETI-MINATEC, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble (France); Sanquer, M. [SPSMS, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble (France); Ferguson, A. J. [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)
2016-05-16
We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.
Optoelectronic Properties of Semiconductor Quantum Dot Solids for Photovoltaic Applications.
Chistyakov, A A; Zvaigzne, M A; Nikitenko, V R; Tameev, A R; Martynov, I L; Prezhdo, O V
2017-09-07
Quantum dot (QD) solids represent a new type of condensed matter drawing high fundamental and applied interest. Quantum confinement in individual QDs, combined with macroscopic scale whole materials, leads to novel exciton and charge transfer features that are particularly relevant to optoelectronic applications. This Perspective discusses the structure of semiconductor QD solids, optical and spectral properties, charge carrier transport, and photovoltaic applications. The distance between adjacent nanoparticles and surface ligands influences greatly electrostatic interactions between QDs and, hence, charge and energy transfer. It is almost inevitable that QD solids exhibit energetic disorder that bears many similarities to disordered organic semiconductors, with charge and exciton transport described by the multiple trapping model. QD solids are synthesized at low cost from colloidal solutions by casting, spraying, and printing. A judicious selection of a layer sequence involving QDs with different size, composition, and ligands can be used to harvest sunlight over a wide spectral range, leading to inexpensive and efficient photovoltaic devices.
Exciton and Biexciton Binding Energies in Rectangular Quantum Dots
Institute of Scientific and Technical Information of China (English)
LIU Yong-Hui; KONG Xiao-Jun
2005-01-01
@@ In the effective mass approximation, using the variational technology and a method of expanding the wavefunctions of exciton in terms of the eigenfunctions of the noninteracting electron-hole system, we calculate the exciton and biexciton ground state binding energies for rectangular quantum dots (QDs). In the calculation, a three-dimensional Fourier expansion of Coulomb potential is used to remove the numerical difficulty with the 1/r singularity, and it considerably reduces the computational effort. Our results agree fairly well with the previous results. It is found that the binding energies are highly correlated to the size of QDs. The quantum confinement effect of spherical QDs about biexciton is obviously larger than that of rectangular QDs when the well width is narrower than 2.0aB.
Wei, Hai-Rui; Deng, Fu-Guo
2013-07-29
We investigate the possibility of achieving scalable photonic quantum computing by the giant optical circular birefringence induced by a quantum-dot spin in a double-sided optical microcavity as a result of cavity quantum electrodynamics. We construct a deterministic controlled-not gate on two photonic qubits by two single-photon input-output processes and the readout on an electron-medium spin confined in an optical resonant microcavity. This idea could be applied to multi-qubit gates on photonic qubits and we give the quantum circuit for a three-photon Toffoli gate. High fidelities and high efficiencies could be achieved when the side leakage to the cavity loss rate is low. It is worth pointing out that our devices work in both the strong and the weak coupling regimes.
Barrier Li Quantum Dots in Magnetic Fields
Institute of Scientific and Technical Information of China (English)
LIUYi-Min; LIXiao-Zhu; YANWen-Hong; BAOCheng-Guang
2003-01-01
The methods for the few-body system are introduced to investigate the states of the barrier Li quantum dots (QDs) in an arbitrary strength of magnetic field. The configuration, which consists of a positive ion located on the z-axis at a distaneed from the two-dimensional QD plane (the x-y plane) and three electrons in the dot plane bound by the positive ion, is called a barrier Li center. The system, which consists of three electrons in the dot plane bound by the ion,is called a barrier Li QD. The dependence of energy of the state of the barrier Li QD on an external magnetic field B and the distance d is obtained. The angular momentum L of the ground states is found to jump not only with the variation orB but also with d.
Long Spin Relaxation and Coherence Times of Electrons In Gated Si/SiGe Quantum Dots
He, Jianhua; Tyryshkin, A. M.; Lyon, S. A.; Lee, C.-H.; Huang, S.-H.; Liu, C. W.
2012-02-01
Single electron spin states in semiconductor quantum dots are promising candidate qubits. We report the measurement of 250 μs relaxation (T1) and coherence (T2) times of electron spins in gated Si/SiGe quantum dots at 350 mK. The experiments used conventional X-band (10 GHz) pulsed electron spin resonance (pESR), on a large area (3.5 x 20 mm^2) dual-gate undoped high mobility Si/SiGe heterostructure sample, which was patterned with 2 x 10^8 quantum dots using e-beam lithography. Dots having 150 nm radii with a 700 nm period are induced in a natural Si quantum well by the gates. The measured T1 and T2 at 350 mK are much longer than those of free 2D electrons, for which we measured T1 to be 10 μs and T2 to be 6.5 μs in this gated sample. The results provide direct proof that the effects of a fluctuating Rashba field have been greatly suppressed by confining the electrons in quantum dots. From 0.35 K to 0.8 K, T1 of the electron spins in the quantum dots shows little temperature dependence, while their T2 decreased to about 150 μs at 0.8 K. The measured 350 mK spin coherence time is 10 times longer than previously reported for any silicon 2D electron-based structures, including electron spins confined in ``natural quantum dots'' formed by potential disorder at the Si/SiO2ootnotetextS. Shankar et al., Phys. Rev. B 82, 195323 (2010) or Si/SiGe interface, where the decoherence appears to be controlled by spin exchange.
Quantum Entanglement of Quantum Dot Spin Using Flying Qubits
2015-05-01
SPDC photon is teleported to a single quantum dot spin by a projective measurement using a Hong Ou Mandel (HOM) interferometer. The SPDC source...photo diode B: Blue CW: Continuous wave DBR: Distributed Bragg reflector EOM: Electro-optics modulator H: Horizontal HOM: Hong-Ou- Mandel InAs
Quantum optics with quantum dots in photonic wires
DEFF Research Database (Denmark)
Munsch, Mathieu; Cadeddu, Davide; Teissier, Jean
2016-01-01
We present an exploration of the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter's properties with the highest sensitivity, allowing...
Quantum photonics with quantum dots in photonic wires
DEFF Research Database (Denmark)
Munsch, Mathieu; Kuhlmann, Andreas; Cadeddu, Davide;
2016-01-01
We present results from the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter’s properties with the highest sensitivity. Weperform...
Nanobeam photonic crystal cavity quantum dot laser
Gong, Yiyang; Shambat, Gary; Sarmiento, Tomas; Harris, James S; Vuckovic, Jelena
2010-01-01
The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is calculated. We study the cavity lasers under both 780 nm and 980 nm pump, finding thresholds as low as 0.3 uW and 19 uW for the two pump wavelengths, respectively. Finally, the nanobeam cavity laser wavelengths are tuned by up to 7 nm by employing a fiber taper in near proximity to the cavities. The fiber taper is used both to efficiently pump the cavity and collect the cavity emission.
Energy level statistics of quantum dots.
Tsau, Chien-Yu; Nghiem, Diu; Joynt, Robert; Woods Halley, J
2007-05-08
We investigate the charging energy level statistics of disordered interacting electrons in quantum dots by numerical calculations using the Hartree approximation. The aim is to obtain a global picture of the statistics as a function of disorder and interaction strengths. We find Poisson statistics at very strong disorder, Wigner-Dyson statistics for weak disorder and interactions, and a Gaussian intermediate regime. These regimes are as expected from previous studies and fundamental considerations, but we also find interesting and rather broad crossover regimes. In particular, intermediate between the Gaussian and Poisson regimes we find a two-sided exponential distribution for the energy level spacings. In comparing with experiment, we find that this distribution may be realized in some quantum dots.
Many electron effects in semiconductor quantum dots
Indian Academy of Sciences (India)
R K Pandey; Manoj K Harbola; V Ranjan; Vijay A Singh
2003-01-01
Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as ‘artificial atoms’ by some, they are much larger (1 100 nm) than real atoms. One can study a variety of manyelectron effects in them, which are otherwise difficult to observe in a real atom. We have treated these effects within the local density approximation (LDA) and the Harbola–Sahni (HS) scheme. HS is free of the selfinteraction error of the LDA. Our calculations have been performed in a three-dimensional quantum dot. We have carried out a study of the size and shape dependence of the level spacing. Scaling laws for the Hubbard ‘’ are established.
Energy level statistics of quantum dots
Energy Technology Data Exchange (ETDEWEB)
Tsau, C-Y [University of Wisconsin-Madison, Madison, WI 53706 (United States); Nghiem, Diu [University of Wisconsin-Madison, Madison, WI 53706 (United States); Joynt, Robert [University of Wisconsin-Madison, Madison, WI 53706 (United States); Halley, J Woods [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States)
2007-05-08
We investigate the charging energy level statistics of disordered interacting electrons in quantum dots by numerical calculations using the Hartree approximation. The aim is to obtain a global picture of the statistics as a function of disorder and interaction strengths. We find Poisson statistics at very strong disorder, Wigner-Dyson statistics for weak disorder and interactions, and a Gaussian intermediate regime. These regimes are as expected from previous studies and fundamental considerations, but we also find interesting and rather broad crossover regimes. In particular, intermediate between the Gaussian and Poisson regimes we find a two-sided exponential distribution for the energy level spacings. In comparing with experiment, we find that this distribution may be realized in some quantum dots.
Energy level statistics of quantum dots
Tsau, Chien-Yu; Nghiem, Diu; Joynt, Robert; Halley, J. Woods
2007-05-01
We investigate the charging energy level statistics of disordered interacting electrons in quantum dots by numerical calculations using the Hartree approximation. The aim is to obtain a global picture of the statistics as a function of disorder and interaction strengths. We find Poisson statistics at very strong disorder, Wigner-Dyson statistics for weak disorder and interactions, and a Gaussian intermediate regime. These regimes are as expected from previous studies and fundamental considerations, but we also find interesting and rather broad crossover regimes. In particular, intermediate between the Gaussian and Poisson regimes we find a two-sided exponential distribution for the energy level spacings. In comparing with experiment, we find that this distribution may be realized in some quantum dots.
2007-01-01
We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tu...
Effect of Electrical Field on Colloidal CdSe/ZnS Quantum Dots
Institute of Scientific and Technical Information of China (English)
WANG Zhi-Bing; ZHANG Jia-Yu; CUI Yi-Ping; YE Yong-Hong
2008-01-01
@@ We fabricate the hybrid films of colloidal CdSe/ZnS quantum dots (QDs) and poly(9-vinylcarbazole) (PVK) sandwiched between two electrodes.The voltage and temperature dependences of the electrolumineseence (EL) are measured.The quantum-confined Stark effect of colloidal QDs is clearly observed.To explore the mechanism in the QD EL, hybrid films are fabricated with different concentrations of colloidal QDs.Electrons and holes are proposed to be separately transported in QDs and PVK, respectively.
Electron-nuclear interaction in 13C nanotube double quantum dots
Churchill, Hugh Olen Hill; Bestwick, Andrew J.; Harlow, Jennifer W.; Kuemmeth, Ferdinand; Marcos, David; Stwertka, Carolyn H.; Watson, Susan K.; Marcus, Charles Masamed
2008-01-01
For coherent electron spins, hyperfine coupling to nuclei in the host material can either be a dominant source of unwanted spin decoherence or, if controlled effectively, a resource allowing storage and retrieval of quantum information. To investigate the effect of a controllable nuclear environment on the evolution of confined electron spins, we have fabricated and measured gate-defined double quantum dots with integrated charge sensors made from single-walled carbon nanotubes with a variabl...
Ultraviolet-blue photoluminescence of ZnSe quantum dots.
Peng, Ling Ling; Wang, Yu Hua; Li, Cheng Yan
2010-03-01
Zinc blende, sphericity, monodisperse, high luminescence ZnSe quantum dots (QDs) were synthesized by a one-step mild hydrothermal route with Zn and Se dissolved in aqueous NaOH as the source material. The structure and the morphology of the sample were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results indicated that the products were cubic blende ZnSe ranging from 3.2 to 4.5 nm in size. TEM images showed that the QDs have very good dispersibility and distribution. The characteristic features of the absorption and photoluminescence spectra of ZnSe quantum dots were studied at room temperature. Compared with the bulk ZnSe, the absorption edges and luminescent peaks of ZnSe QDs were blue shifted to higher energies due to the quantum confinement effect. Photoluminescence at ultraviolet excitation showed the strong emission at 390 nm related to the higher excitonic states. ZnSe QDs exhibiting photoluminescence line widths as narrow as 40-60 nm. Meanwhile, we simply explored the theoretical mechanism of luminescence in ZnSe QDs and analogized the relation of various point defect concentrations of ZnSe.
Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells
Directory of Open Access Journals (Sweden)
LI Zhi-min
2017-08-01
Full Text Available This paper presents the development status and tendency of quantum dot sensitized solar cells. Photoanode research progress and its related technologies are analyzed in detail from the three ways of semiconductor thin films, quantum dot co-sensitization and quantum dot doping, deriving from the approach that the conversion efficiency can be improved by photoanode modification for quantum dot sensitized solar cells. According to the key factors which restrict the cell efficiency, the promising future development of quantum dot sensitized solar cells is proposed,for example,optimizing further the compositions and structures of semiconductor thin films for the photoanodes, exploring new quantum dots with broadband absorption and developing high efficient techniques of interface modification.
DLTS measurements on GaSb/GaAs quantum dots
Energy Technology Data Exchange (ETDEWEB)
Hoegner, Annika; Nowozin, Tobias; Marent, Andreas; Bimberg, Dieter [Institut fuer Festkoerperphysik, TU Berlin (Germany); Tseng, Chi-Che [Institute of Photonics Technologies, NTHU (China); Lin, Shih-Yen [Institute of Optoelectronic Sciences, NTOU (China)
2010-07-01
Memory devices based on hole storage in self-organized quantum dots offer significant advantages with respect to storage time and scalability. Recently, we demonstrated a first prototype based on InAs/GaAs quantum dots at low temperatures. To enable feasible storage times at room temperature the localisation energy of the quantum dots has to be increased by using other material systems. A first step in this direction is the use of GaSb quantum dots within a GaAs matrix. We have characterized self-organized GaSb/GaAs quantum dots embedded into a n{sup +}p-diode structure. DLTS measurements on hole emission were conducted and yield a strong peak from which a mean emission energy of about 400 meV can be extracted. The reference sample without the quantum dots (containing only the wetting layer) shows no such peak.
Electric and Magnetic Interaction between Quantum Dots and Light
DEFF Research Database (Denmark)
Tighineanu, Petru
a future challenge for the droplet-epitaxy technique. A multipolar theory of spontaneous emission from quantum dots is developed to explain the recent observation that In(Ga)As quantum dots break the dipole theory. The analysis yields a large mesoscopic moment, which contains magnetic-dipole and electric......-matter interaction of both electric and magnetic character. Our study demonstrates that In(Ga)As quantum dots lack parity symmetry and, as consequence, can be employed for locally probing the parity symmetry of complex photonic nanostructures. This opens the prospect for interfacing quantum dots with optical......The present thesis reports research on the optical properties of quantum dots by developing new theories and conducting optical measurements. We demonstrate experimentally singlephoton superradiance in interface-uctuation quantum dots by recording the temporal decay dynamics in conjunction...
Quantum dot spectroscopy using a single phosphorus donor
Büch, Holger; Fuechsle, Martin; Baker, William; House, Matthew G.; Simmons, Michelle Y.
2015-12-01
Using a deterministic single P donor placed with atomic precision accuracy next to a nanoscale silicon quantum dot, we present a way to analyze the energy spectrum of small quantum dots in silicon by tunnel-coupled transport measurements. The energy-level structure of the quantum dot is observed as resonance features within the transport bias triangles when the donor chemical potential is aligned with states within the quantum dot as confirmed by a numeric rate equation solver SIMON. This technique allows us to independently extract the quantum dot level structure irrespective of the density of states in the leads. Such a method is useful for the investigation of silicon quantum dots in the few-electron regime where the level structure is governed by an intricate interplay between the spin- and the valley-orbit degrees of freedom.
Decoherence in Nearly-Isolated Quantum Dots
DEFF Research Database (Denmark)
Folk, J.; M. Marcus, C.; Harris jr, J.
2000-01-01
Decoherence in nearly-isolated GaAs quantum dots is investigated using the change in average Coulomb blockade peak height upon breaking time-reversal symmetry. The normalized change in average peak height approaches the predicted universal value of 1/4 at temperatures well below the single......-particle level spacing, but is greatly suppressed for temperature greater than the level spacing, suggesting that inelastic scattering or other dephasing mechanisms dominate in this regime....
Quantum-dot excitons in nanostructured environments
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Stobbe, Søren; Lodahl, Peter
2011-01-01
The interaction between light and quantum-dot (QD) excitons is strongly influenced by the environment in which the QD is placed. We have investigated the interaction by measuring the time-resolved spontaneous-emission rate of QD excitons in different nanostructured environments. Thereby, we have...... is demonstrated and the influence of disorder is discussed. The findings have a strong bearing on future nanophotonic devices....
Quantum-dot excitons in nanostructured environments
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Stobbe, Søren; Lodahl, Peter
2010-01-01
The interaction between light and quantum-dot (QD) excitons is strongly influenced by the environment in which the QD is placed. We have investigated the interaction by measuring the time-resolved spontaneous-emission rate of QD excitons in different nanostructured environments. Thereby, we have...... is demonstrated and the influence of disorder is discussed. The findings have a strong bearing on future nanophotonic devices....
Quantum dot/glycol chitosan fluorescent nanoconjugates
Mansur, Alexandra AP; Herman S. Mansur
2015-01-01
In this study, novel carbohydrate-based nanoconjugates combining chemically modified chitosan with semiconductor quantum dots (QDs) were designed and synthesised via single-step aqueous route at room temperature. Glycol chitosan (G-CHI) was used as the capping ligand aiming to improve the water solubility of the nanoconjugates to produce stable and biocompatible colloidal systems. UV-visible (UV–vis) spectroscopy, photoluminescence (PL) spectroscopy, and Fourier transform infrared (FTIR) spec...
Depleted bulk heterojunction colloidal quantum dot photovoltaics
Energy Technology Data Exchange (ETDEWEB)
Barkhouse, D.A.R. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); IBM Thomas J. Watson Research Center, Kitchawan Road, Yorktown Heights, NY, 10598 (United States); Debnath, Ratan; Kramer, Illan J.; Zhitomirsky, David; Levina, Larissa; Sargent, Edward H. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Pattantyus-Abraham, Andras G. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Quantum Solar Power Corporation, 1055 W. Hastings, Ste. 300, Vancouver, BC, V6E 2E9 (Canada); Etgar, Lioz; Graetzel, Michael [Laboratory for Photonics and Interfaces, Institute of Chemical Sciences and Engineering, School of Basic Sciences, Swiss Federal Institute of Technology, CH-1015 Lausanne (Switzerland)
2011-07-26
The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
The Silicon:Colloidal Quantum Dot Heterojunction
Masala, Silvia
2015-10-13
A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics
Barkhouse, D. Aaron R.
2011-05-26
The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Pharmaceutical and biomedical applications of quantum dots.
Bajwa, Neha; Mehra, Neelesh K; Jain, Keerti; Jain, Narendra K
2016-05-01
Quantum dots (QDs) have captured the fascination and attention of scientists due to their simultaneous targeting and imaging potential in drug delivery, in pharmaceutical and biomedical applications. In the present study, we have exhaustively reviewed various aspects of QDs, highlighting their pharmaceutical and biomedical applications, pharmacology, interactions, and toxicological manifestations. The eventual use of QDs is to dramatically improve clinical diagnostic tests for early detection of cancer. In recent years, QDs were introduced to cell biology as an alternative fluorescent probe.
Electrically addressing a single self-assembled quantum dot
Ellis, D J P; Atkinson, P; Ritchie, D A; Shields, A J
2006-01-01
We report on the use of an aperture in an aluminum oxide layer to restrict current injection into a single self-assembled InAs quantum dot, from an ensemble of such dots within a large mesa. The insulating aperture is formed through the wet-oxidation of a layer of AlAs. Under photoluminescence we observe that only one quantum dot in the ensemble exhibits a Stark shift, and that the same single dot is visible under electroluminescence. Autocorrelation measurements performed on the electroluminescence confirm that we are observing emission from a single quantum dot.
Quantum State Transfer from a Single Photon to a Distant Quantum-Dot Electron Spin
He, Yu; He, Yu-Ming; Wei, Yu-Jia; Jiang, Xiao; Chen, Kai; Lu, Chao-Yang; Pan, Jian-Wei; Schneider, Christian; Kamp, Martin; Höfling, Sven
2017-08-01
Quantum state transfer from flying photons to stationary matter qubits is an important element in the realization of quantum networks. Self-assembled semiconductor quantum dots provide a promising solid-state platform hosting both single photon and spin, with an inherent light-matter interface. Here, we develop a method to coherently and actively control the single-photon frequency bins in superposition using electro-optic modulators, and measure the spin-photon entanglement with a fidelity of 0.796 ±0.020 . Further, by Greenberger-Horne-Zeilinger-type state projection on the frequency, path, and polarization degrees of freedom of a single photon, we demonstrate quantum state transfer from a single photon to a single electron spin confined in an InGaAs quantum dot, separated by 5 m. The quantum state mapping from the photon's polarization to the electron's spin is demonstrated along three different axes on the Bloch sphere, with an average fidelity of 78.5%.
Quantum State Transfer from a Single Photon to a Distant Quantum-Dot Electron Spin.
He, Yu; He, Yu-Ming; Wei, Yu-Jia; Jiang, Xiao; Chen, Kai; Lu, Chao-Yang; Pan, Jian-Wei; Schneider, Christian; Kamp, Martin; Höfling, Sven
2017-08-11
Quantum state transfer from flying photons to stationary matter qubits is an important element in the realization of quantum networks. Self-assembled semiconductor quantum dots provide a promising solid-state platform hosting both single photon and spin, with an inherent light-matter interface. Here, we develop a method to coherently and actively control the single-photon frequency bins in superposition using electro-optic modulators, and measure the spin-photon entanglement with a fidelity of 0.796±0.020. Further, by Greenberger-Horne-Zeilinger-type state projection on the frequency, path, and polarization degrees of freedom of a single photon, we demonstrate quantum state transfer from a single photon to a single electron spin confined in an InGaAs quantum dot, separated by 5 m. The quantum state mapping from the photon's polarization to the electron's spin is demonstrated along three different axes on the Bloch sphere, with an average fidelity of 78.5%.
Linear and nonlinear absorption coefficients of spherical quantum dot inside external magnetic field
Çakır, Bekir; Yakar, Yusuf; Özmen, Ayhan
2017-04-01
We have calculated the wavefunctions and energy eigenvalues of spherical quantum dot with infinite potential barrier inside uniform magnetic field. In addition, we have investigated the magnetic field effect on optical transitions between Zeeman energy states. The results are expressed as a function of dot radius, incident photon energy and magnetic field strength. The results present that, in large dot radii, the external magnetic field affects strongly the optical transitions between Zeeman states. In the strong spatial confinement case, energy level is relatively insensitive to the magnetic field, and electron spatial confinement prevails over magnetic confinement. Also, while m varies from -1 to +1, the peak positions of the optical transitions shift toward higher energy (blueshift).
Linear and nonlinear absorption coefficients of spherical quantum dot inside external magnetic field
Energy Technology Data Exchange (ETDEWEB)
Çakır, Bekir, E-mail: bcakir@selcuk.edu.tr [Physics Department, Faculty of Science, Selcuk University, Campus, 42075 Konya (Turkey); Yakar, Yusuf, E-mail: yuyakar@yahoo.com [Physics Department, Faculty of Arts and Science, Aksaray University, Campus, 68100 Aksaray (Turkey); Özmen, Ayhan [Physics Department, Faculty of Science, Selcuk University, Campus, 42075 Konya (Turkey)
2017-04-01
We have calculated the wavefunctions and energy eigenvalues of spherical quantum dot with infinite potential barrier inside uniform magnetic field. In addition, we have investigated the magnetic field effect on optical transitions between Zeeman energy states. The results are expressed as a function of dot radius, incident photon energy and magnetic field strength. The results present that, in large dot radii, the external magnetic field affects strongly the optical transitions between Zeeman states. In the strong spatial confinement case, energy level is relatively insensitive to the magnetic field, and electron spatial confinement prevails over magnetic confinement. Also, while m varies from −1 to +1, the peak positions of the optical transitions shift toward higher energy (blueshift).
Lu, Liqiang; Zhu, Yingchun; Shi, Chao; Pei, Yutao T.
2016-01-01
Graphene quantum dots (GQDs) exhibit unique physical and chemical properties due to their quantum confinements, edge effects and defect contents. Synthesis of GQDs with controlled defect content is an important issue for various applications. In this paper, an environmental friendly, fast and
Lu, Liqiang; Zhu, Yingchun; Shi, Chao; Pei, Yutao T.
2016-01-01
Graphene quantum dots (GQDs) exhibit unique physical and chemical properties due to their quantum confinements, edge effects and defect contents. Synthesis of GQDs with controlled defect content is an important issue for various applications. In this paper, an environmental friendly, fast and indust
Semiconductor quantum dot scintillation under gamma-ray irradiation.
Létant, S E; Wang, T-F
2006-12-01
We recently demonstrated the ability of semiconductor quantum dots to convert alpha radiation into visible photons. In this letter, we report on the scintillation of quantum dots under gamma irradiation and compare the energy resolution of the 59 keV line of americium-241 obtained with our quantum dot-glass nanocomposite to that of a standard sodium iodide scintillator. A factor 2 improvement is demonstrated experimentally and interpreted theoretically using a combination of energy-loss and photon-transport models.
Controllability of multi-partite quantum systems and selective excitation of quantum dots
Energy Technology Data Exchange (ETDEWEB)
Schirmer, S G [Department of Applied Mathematics and Theoretical Physics, University of Cambridge, Wilberforce Road, Cambridge CB3 0WA (United Kingdom); Pullen, I C H [Department of Applied Mathematics and Computing, Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Solomon, A I [Department of Physics and Astronomy, Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)
2005-10-01
We consider the degrees of controllability of multi-partite quantum systems, as well as necessary and sufficient criteria for each case. The results are applied to the problem of simultaneous control of an ensemble of quantum dots with a single laser pulse. Finally, we apply optimal control techniques to demonstrate selective excitation of individual dots for a simultaneously controllable ensemble of quantum dots.
Quantum optics with quantum dots in photonic nanowires
DEFF Research Database (Denmark)
Claudon, Julien; Munsch, Matthieu; Bleuse, Joel;
2012-01-01
Besides microcavities and photonic crystals, photonic nanowires have recently emerged as a novel resource for solidstate quantum optics. We will review recent studies which demonstrate an excellent control over the spontaneous emission of InAs quantum dots (QDs) embedded in single-mode Ga...... quantum optoelectronic devices. Quite amazingly, this approach has for instance permitted (unlike microcavity-based approaches) to combine for the first time a record-high efficiency (72%) and a negligible g(2) in a QD single photon source....
Quantum transport through an array of quantum dots.
Chen, Shuguang; Xie, Hang; Zhang, Yu; Cui, Xiaodong; Chen, Guanhua
2013-01-07
The transient current through an array of as many as 1000 quantum dots is simulated with two newly developed quantum mechanical methods. To our surprise, upon switching on the bias voltage, the current increases linearly with time before reaching its steady state value. And the time required for the current to reach its steady state value is proportional to the length of the array, and more interestingly, is exactly the time for a conducting electron to travel through the array at the Fermi velocity. These quantum phenomena can be understood by a simple analysis on the energetics of an equivalent classical circuit. An experimental design is proposed to confirm the numerical findings.
Tuning the quantum critical crossover in quantum dots
Murthy, Ganpathy
2005-03-01
Quantum dots with large Thouless number g embody a regime where both disorder and interactions can be treated nonperturbatively using large-N techniques (with N=g) and quantum phase transitions can be studied. Here we focus on dots where the noninteracting Hamiltonian is drawn from a crossover ensemble between two symmetry classes, where the crossover parameter introduces a new, tunable energy scale independent of and much smaller than the Thouless energy. We show that the quantum critical regime, dominated by collective critical fluctuations, can be accessed at the new energy scale. The nonperturbative physics of this regime can only be described by the large-N approach, as we illustrate with two experimentally relevant examples. G. Murthy, PRB 70, 153304 (2004). G. Murthy, R. Shankar, D. Herman, and H. Mathur, PRB 69, 075321 (2004)
Investigation of Quantum Dot Lasers
2007-11-02
Lett. 79, 722 (2001). 8. Report of Inventions None. 9. List of Scientific Personnel Supported, Degrees, Awards and Honors Siddhartha ...Ghosh, GSRA Sameer Pradhan, GSRA Sasan Fathpour, GSRA Zetian Mi, GSRA Siddhartha Ghosh, Ph.D., “Growth of In(Ga)As/GaAs self-organized quantum
Fock-Darwin-like quantum dot states formed by charged Mn interstitial ions.
Makarovsky, O; Thomas, O; Balanov, A G; Eaves, L; Patanè, A; Campion, R P; Foxon, C T; Vdovin, E E; Maude, D K; Kiesslich, G; Airey, R J
2008-11-28
We report a method of creating electrostatically induced quantum dots by thermal diffusion of interstitial Mn ions out of a p-type (GaMn)As layer into the vicinity of a GaAs quantum well. This approach creates deep, approximately circular, and strongly confined dotlike potential minima in a large (200 microm) mesa diode structure without need for advanced lithography or electrostatic gating. Magnetotunneling spectroscopy of an individual dot reveals the symmetry of its electronic eigenfunctions and a rich energy level spectrum of Fock-Darwin-like states with an orbital angular momentum component |lz| from 0 to 11.
A Simple Shell Model for Quantum Dots in a Tilted Magnetic Field
Heiss, W. D.; Nazmitdinov, R. G.
1997-01-01
A model for quantum dots is proposed, in which the motion of a few electrons in a three-dimensional harmonic oscillator potential under the influence of a homogeneous magnetic field of arbitrary direction is studied. The spectrum and the wave functions are obtained by solving the classical problem. The ground state of the Fermi-system is obtained by minimizing the total energy with regard to the confining frequencies. From this a dependence of the equilibrium shape of the quantum dot on the e...
Two-Qubit Geometric Phase Gate for Quantum Dot Spins using Cavity Polariton Resonance
Puri, Shruti; Yamamoto, Yoshihisa
2012-01-01
We describe a design to implement a two-qubit geometric phase gate, by which a pair of electrons confined in adjacent quantum dots are entangled. The entanglement is a result of the Coulomb exchange interaction between the optically excited exciton-polaritons and the localized spins. This optical coupling, resembling the electron-electron Ruderman-Kittel-Kasuya-Yosida (RKKY) inter- actions, offers high speed, high fidelity two-qubit gate operation with moderate cavity quality factor Q. The errors due to the finite lifetime of the polaritons can be minimized by optimizing the optical pulse parameters (duration and energy). The proposed design, using electrostatic quantum dots, maximizes entanglement and ensures scalability.
EFFECT OF DIELECTRIC CONSTANT ON THE EXCITON GROUND STATE ENERGY OF CdSe QUANTUM DOTS
Institute of Scientific and Technical Information of China (English)
HUI PING
2000-01-01
The B-spline technique is used in the calculation of the exciton ground state energy based on the effective mass approximation (EMA) model.The exciton is confined in CdSe microspherical crystallites with a finite-height potential wall (dots).In this approach,(a) the wave function is allowed to penetrate to the outside of the dots; (b) the dielectric constants of the quantum dot and the surrounding material are considered to be different; and (c) the dielectric constant of the dots are size-dependent.The exciton energies as functions of radii of the dots in the range 0.5-3.5nm are calculated and compared with experimental and previous theoretical data.The results show that: (1) The exciton energy is convergent as the radius of the dot becomes very small.(2) A good agreement with the experimental data better than other theoretical results is achieved.(3) The penetration (or leaking) of the wave function and the difference of the dielectric constants in different regions are necessary for correcting the Coulomb interaction energy and reproducing experimental data.(4) The EMA model with B-spline technique can describe the status of excition confined in quantum dot very well.
Quantum dot behavior in transition metal dichalcogenides nanostructures
Luo, Gang; Zhang, Zhuo-Zhi; Li, Hai-Ou; Song, Xiang-Xiang; Deng, Guang-Wei; Cao, Gang; Xiao, Ming; Guo, Guo-Ping
2017-08-01
Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on electron transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.
Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals
Energy Technology Data Exchange (ETDEWEB)
See, Gloria G. [Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801 (United States); Xu, Lu; Nuzzo, Ralph G. [Department of Chemistry, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, Illinois 61801 (United States); Sutanto, Erick; Alleyne, Andrew G. [Mechanical Science and Engineering Department, University of Illinois at Urbana-Champaign, 154 Mechanical Engineering Building, Urbana, Illinois 61801 (United States); Cunningham, Brian T. [Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801 (United States); Department of Bioengineering, University of Illinois at Urbana-Champaign, 1270 Digital Computer Laboratory, MC-278, Urbana, Illinois 61801 (United States)
2015-08-03
Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure.
Synthesis of CdSe Quantum Dots Using Fusarium oxysporum
Takaaki Yamaguchi; Yoshijiro Tsuruda; Tomohiro Furukawa; Lumi Negishi; Yuki Imura; Shohei Sakuda; Etsuro Yoshimura; Michio Suzuki
2016-01-01
CdSe quantum dots are often used in industry as fluorescent materials. In this study, CdSe quantum dots were synthesized using Fusarium oxysporum. The cadmium and selenium concentration, pH, and temperature for the culture of F. oxysporum (Fusarium oxysporum) were optimized for the synthesis, and the CdSe quantum dots obtained from the mycelial cells of F. oxysporum were observed by transmission electron microscopy. Ultra-thin sections of F. oxysporum showed that the CdSe quantum dots were pr...
Core–shell quantum dots: Properties and applications
Energy Technology Data Exchange (ETDEWEB)
Vasudevan, D., E-mail: vasudevand@rediffmail.com [Electrodics and electrocatalysis division, CSIR-CECRI, Karaikudi 630006 (India); Gaddam, Rohit Ranganathan [Amity Institute of Nanotechnology, Amity University, Noida 201301 (India); Trinchi, Adrian; Cole, Ivan [CSIRO Materials Science and Engineering, Clayton South MDC, 3169 (Australia)
2015-07-05
Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis.
Single-electron Spin Resonance in a Quadruple Quantum Dot
Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R.; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Ito, Takumi; Sugawara, Retsu; Noiri, Akito; Ludwig, Arne; Wieck, Andreas D.; Tarucha, Seigo
2016-08-01
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible.
Zhao, Tianshuo; Goodwin, Earl D; Guo, Jiacen; Wang, Han; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R
2016-09-22
Advanced architectures are required to further improve the performance of colloidal PbS heterojunction quantum dot solar cells. Here, we introduce a CdI2-treated CdSe quantum dot buffer layer at the junction between ZnO nanoparticles and PbS quantum dots in the solar cells. We exploit the surface- and size-tunable electronic properties of the CdSe quantum dots to optimize its carrier concentration and energy band alignment in the heterojunction. We combine optical, electrical, and analytical measurements to show that the CdSe quantum dot buffer layer suppresses interface recombination and contributes additional photogenerated carriers, increasing the open-circuit voltage and short-circuit current of PbS quantum dot solar cells, leading to a 25% increase in solar power conversion efficiency.
Linewidth statistics of single InGaAs quantum dot photolumincescence lines
DEFF Research Database (Denmark)
Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher
2000-01-01
We have used photoluminescence spectroscopy with high spatial and spectral resolution to measure the linewidths of single emission lines from In0.5Ga0.5As/GaAs self-assembled quantum dots. At 10 K, we find a broad, asymmetric distribution of linewidths with a maximum at 50 mu eV. The distribution...... of linewidths is not significantly influenced by small variations in the quantum dot confinement potential. We claim that the wider transition lines are broadened by local electric field fluctuations while narrower lines are homogeneously broadened by acoustic-phonon interactions. The width of narrow single-dot...... luminescence lines depends only weakly on temperature up to 50 K, showing a broadening of 0.4 mu eV/K. Above 50 K, a thermally activated behavior of the linewidth is observed. This temperature dependence is consistent with the discrete energy level structure of the dots....
Quantum-Dot-Based Telecommunication-Wavelength Quantum Relay
Huwer, J.; Stevenson, R. M.; Skiba-Szymanska, J.; Ward, M. B.; Shields, A. J.; Felle, M.; Farrer, I.; Ritchie, D. A.; Penty, R. V.
2017-08-01
The development of quantum relays for long-haul and attack-proof quantum communication networks operating with weak coherent laser pulses requires entangled photon sources at telecommunication wavelengths with intrinsic single-photon emission for most practical implementations. Using a semiconductor quantum dot emitting entangled photon pairs in the telecommunication O band, we demonstrate a quantum relay fulfilling both of these conditions. The system achieves a maximum fidelity of 94.5% for implementation of a standard four-state protocol with input states generated by a laser. We further investigate robustness against frequency detuning of the narrow-band input and perform process tomography of the teleporter, revealing operation for arbitrary pure input states, with an average gate fidelity of 83.6%. The results highlight the potential of semiconductor light sources for compact and robust quantum-relay technology that is compatible with existing communication infrastructures.
Synthesis of colloidal SnSe quantum dots by electron beam irradiation
Energy Technology Data Exchange (ETDEWEB)
Li Zhen; Peng Liwei; Fang Yaoguo; Chen Zhiwen [Shanghai Applied Radiation Institute, Shanghai University, Shanghai 201800 (China); Pan Dengyu [Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 201800 (China); Wu Minghong, E-mail: mhwu@staff.shu.edu.cn [Shanghai Applied Radiation Institute, Shanghai University, Shanghai 201800 (China)
2011-12-15
Water-soluble orthorhombic colloidal SnSe quantum dots with an average diameter of 4 nm were successfully prepared by a novel irradiation route using an electronic accelerator as a radiation source and hexadecyl trimethyl ammonium bromide (CTAB) as a surfactant. The quantum dots exhibit a large direct bandgap of 3.89 eV, greatly blue shifted compared with that of bulk SnSe (1.0 eV) due to the quantum confinement effect. The quantum dots show blue photoluminescence at {approx}420 nm. The influence of CTAB on the growth of the quantum dots was investigated and a possible reaction/growth mechanism was proposed. - Highlights: > A rapid, facile and green strategy is developed to synthesize SnSe QDs. > The raw materials are green and easily obtained. > The surfactant CTAB plays an important role in the formation of SnSe quantum dots. > The obtained SnSe QDs is well-dispersed with the average size of around 4 nm.
Hybrid passivated colloidal quantum dot solids
Ip, Alexander H.; Thon, Susanna M.; Hoogland, Sjoerd; Voznyy, Oleksandr; Zhitomirsky, David; Debnath, Ratan; Levina, Larissa; Rollny, Lisa R.; Carey, Graham H.; Fischer, Armin; Kemp, Kyle W.; Kramer, Illan J.; Ning, Zhijun; Labelle, André J.; Chou, Kang Wei; Amassian, Aram; Sargent, Edward H.
2012-09-01
Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electron-hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device.
Hybrid passivated colloidal quantum dot solids
Ip, Alex
2012-07-29
Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.
Nonrenewal statistics in transport through quantum dots
Ptaszyński, Krzysztof
2017-01-01
The distribution of waiting times between successive tunneling events is an already established method to characterize current fluctuations in mesoscopic systems. Here, I investigate mechanisms generating correlations between subsequent waiting times in two model systems, a pair of capacitively coupled quantum dots and a single-level dot attached to spin-polarized leads. Waiting time correlations are shown to give insight into the internal dynamics of the system; for example they allow distinction between different mechanisms of the noise enhancement. Moreover, the presence of correlations breaks the validity of the renewal theory. This increases the number of independent cumulants of current fluctuation statistics, thus providing additional sources of information about the transport mechanism. I also propose a method for inferring the presence of waiting time correlations based on low-order current correlation functions. This method gives a way to extend the analysis of nonrenewal current fluctuations to the systems for which single-electron counting is not experimentally feasible. The experimental relevance of the findings is also discussed; for example reanalysis of previous results concerning transport in quantum dots is suggested.
Production and targeting of monovalent quantum dots.
Seo, Daeha; Farlow, Justin; Southard, Kade; Jun, Young-Wook; Gartner, Zev J
2014-10-23
The multivalent nature of commercial quantum dots (QDs) and the difficulties associated with producing monovalent dots have limited their applications in biology, where clustering and the spatial organization of biomolecules is often the object of study. We describe here a protocol to produce monovalent quantum dots (mQDs) that can be accomplished in most biological research laboratories via a simple mixing of CdSe/ZnS core/shell QDs with phosphorothioate DNA (ptDNA) of defined length. After a single ptDNA strand has wrapped the QD, additional strands are excluded from the surface. Production of mQDs in this manner can be accomplished at small and large scale, with commercial reagents, and in minimal steps. These mQDs can be specifically directed to biological targets by hybridization to a complementary single stranded targeting DNA. We demonstrate the use of these mQDs as imaging probes by labeling SNAP-tagged Notch receptors on live mammalian cells, targeted by mQDs bearing a benzylguanine moiety.
Amphoteric CdSe nanocrystalline quantum dots.
Islam, Mohammad A
2008-06-25
The nanocrystal quantum dot (NQD) charge states strongly influence their electrical transport properties in photovoltaic and electroluminescent devices, optical gains in NQD lasers, and the stability of the dots in thin films. We report a unique electrostatic nature of CdSe NQDs, studied by electrophoretic methods. When we submerged a pair of metal electrodes, in a parallel plate capacitor configuration, into a dilute solution of CdSe NQDs in hexane, and applied a DC voltage across the pair, thin films of CdSe NQDs were deposited on both the positive and the negative electrodes. Extensive characterizations including scanning electron microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) and Raman studies revealed that the films on both the positive and the negative electrodes were identical in every respect, clearly indicating that: (1) a fraction (<1%) of the CdSe NQDs in free form in hexane solution are charged and, more importantly, (2) there are equal numbers of positive and negative CdSe NQDs in the hexane solution. Experiments also show that the number of deposited dots is at least an order of magnitude higher than the number of initially charged dots, indicating regeneration. We used simple thermodynamics to explain such amphoteric nature and the charging/regeneration of the CdSe NQDs.
Generalized description of few-electron quantum dots at zero and nonzero magnetic fields
Energy Technology Data Exchange (ETDEWEB)
Ciftja, Orion [Department of Physics, Prairie View A and M University, Prairie View, TX 77446 (United States)
2007-01-31
We introduce a generalized ground state variational wavefunction for parabolically confined two-dimensional quantum dots that equally applies to both cases of weak (or zero) and strong magnetic field. The wavefunction has a Laughlin-like form in the limit of infinite magnetic field, but transforms into a Jastrow-Slater wavefunction at zero magnetic field. At intermediate magnetic fields (where a fraction of electrons is spin-reversed) it resembles Halperin's spin-reversed wavefunction for the fractional quantum Hall effect. The properties of this variational wavefunction are illustrated for the case of two-dimensional quantum dot helium (a system of two interacting electrons in a parabolic confinement potential) where we find the description to be an excellent representation of the true ground state for the whole range of magnetic fields.
Diamagnetic susceptibility of a magneto-donor in Inhomogeneous Quantum Dots
Mmadi, A.; Rahmani, K.; Zorkani, I.; Jorio, A.
2013-05-01
The binding energy and diamagnetic susceptibility χdia are investigated for a shallow donor confined to move in a spherical Inhomogeneous Quantum Dots "IQD" in the presence of a magnetic field. The calculation was performed with the use of a variational method in the effective mass approximation. We describe the effect of the quantum confinement by an infinite deep potential. The results for a spherical Inhomogeneous Quantum Dots made out of [Ga1-xAlxAs (Core)/GaAs (Well)/Ga1-xAlxAs (Shell)] show that the diamagnetic susceptibility and the binding energy increase with the magnetic field. There are more pronounced for large spherical layer. The binding energy and the diamagnetic susceptibility depend strongly on the donor position. We remark that the diamagnetic susceptibility presents a minimum corresponding to a critical value of the ratio of the inner radius to the outer radius , this critical value is important for nanofabrication techniques.
Ground state energy of excitons in quantum dot treated variationally via Hylleraas-like wavefunction
Institute of Scientific and Technical Information of China (English)
S.(S)akiro(g)lu; (U). Do(g)an; A. Yildlz; K. Akgüng(o)r; H. Epik; Y. Ergün; H. San; (I).S(o)kmen
2009-01-01
In this work,the effects of quantum confinement on the ground state energy of a correlated electron-hole pair in a spherical and in a disc-like quantum dot have been investigated as a function of quantum dot size.Under parabolic confinement potential and within effective mass approximation Ritz's variational method is applied to Hylleraas-like trial wavefunction.An efficient method for reducing the main effort of the calculation of terms like rkeh exp(-λreh)is introduced.The main contribution of the present work is the introduction of integral transforms which provide the calculation of expectation value of energy and the related matrix elements to be done analytically over single-particle coordinates instead of Hylleraas coordinates.
Resonance fluorescence from a telecom-wavelength quantum dot
Al-Khuzheyri, R; Huwer, J; Santana, T S; Szymanska, J Skiba-; Felle, M; Ward, M B; Stevenson, R M; Farrer, I; Tanner, M G; Hadfield, R H; Ritchie, D A; Shields, A J; Gerardot, B D
2016-01-01
We report on resonance fluorescence from a single quantum dot emitting at telecom wavelengths. We perform high-resolution spectroscopy and observe the Mollow triplet in the Rabi regime--a hallmark of resonance fluorescence. The measured resonance-fluorescence spectra allow us to rule out pure dephasing as a significant decoherence mechanism in these quantum dots. Combined with numerical simulations, the experimental results provide robust characterisation of charge noise in the environment of the quantum dot. Resonant control of the quantum dot opens up new possibilities for on-demand generation of indistinguishable single photons at telecom wavelengths as well as quantum optics experiments and direct manipulation of solid-state qubits in telecom-wavelength quantum dots.
Coherent Dynamics of Quantum Dots in Photonic-Crystal Cavities
DEFF Research Database (Denmark)
Madsen, Kristian Høeg
deviations. Similar measurements on a quantum dot in a photonic-crystal cavity sow a Rabi splitting on resonance, while time-resolved measurements prove that the system is in the weak coupling regime. Whle tuning the quantum dot through resonance of the high-Q mode we observe a strong and surprisingly...... Successfully model the decay rates with a microscopic model that allows us to for the first time extract the effective phonon density of states, which we can model with bulk phonons. Studies on a quantum dot detuned from a low-Q mode of a photonic-crystal cavity show a high collection efficiency at the first......In this thesis we have performed quantum-electrodynamics experiments on quantum dots embedded in photonic-crystal cavities. We perform a quantitative comparison of the decay dynamics and emission spectra of quantum dots embedded in a micropillar cavity and a photonic-crystal cavity. The light...
Electrostatically defined silicon quantum dots with counted antimony donor implants
Energy Technology Data Exchange (ETDEWEB)
Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87175 (United States); Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Bielejec, E.; Carroll, M. S. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
2016-02-08
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.
Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot
DEFF Research Database (Denmark)
Bouwes Bavinck, Maaike; Jöns, Klaus D; Zieliński, Michal
2016-01-01
unprecedented potential to be controlled with atomic layer accuracy without random alloying. We show for the first time that crystal phase quantum dots are a source of pure single-photons and cascaded photon-pairs from type II transitions with excellent optical properties in terms of intensity and line width...... quantum optical properties for single photon application and quantum optics.......We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offer...
Space charge spectroscopy of self assembled Ge quantum dots in Si
Energy Technology Data Exchange (ETDEWEB)
Asperger, T.; Miesner, C.; Brunner, K.; Abstreiter, G. [Technische Univ. Muenchen, Garching (Germany). Walter-Schottky-Inst. fuer Physikalische Grundlagen der Halbleiterelektronik
2001-03-01
Admittance spectroscopy was used to investigate the density of states in self assembled Ge quantum dots (QDs) of different size embedded in Si Schottky diodes. From the admittance results, activation energies of hole in the QDs have been determined as a function of the external bias which shifts the Fermi level with respect to the energy states in the QDs. The activation energy of a quantum well sample remains constant up to 6 V bias voltage. Large Ge dots (70 nm diameter) show a continuum of activation energies and a low continuous averaged density of states. In small Ge dots (20 nm diameter) a discrete energy level structure with level separations of 40 to 4 meV are observed. They are attributed to strongly quantum confined hole states with significant Coulomb blockade energies. (orig.)
Spin dynamics of heavy-holes in (InGa)As quantum dots
Energy Technology Data Exchange (ETDEWEB)
Dahbashi, Ramin; Wiegand, Julia; Huebner, Jens; Oestreich, Michael [Insitute for Solid State Physics, Leibniz Universitaet Hannover, Appelstr. 2, D-30167 Hannover (Germany); Marie, Xavier [Universite de Toulouse, INSA, UPS, CNRS, LPCNO, 135 avenue de Rangueil, F-31077 Toulouse (France); Pierz, Klaus; Schumacher, Hans Werner [Physikalisch Technische Bundesanstalt, Bundesallee 100, D-38116 Braunschweig (Germany)
2013-07-01
The spin dynamics of heavy-holes confined in (InGa)As quantum dots (QDs) are of particular interest for future applications in solid state quantum information processing. We employ spin noise spectroscopy as a quantum non-demolition experiment to get access to the intrinsic spin dynamics. The spin noise method is transferred from ensembles of QDs to single dot heavy-hole measurements. Numerical simulations show an extremely long spin dephasing time if light absorption is negligible. The investigated QDs are characterized by polarization resolved photoluminescence measurements and via a Hanbury Brown-Twiss setup. The discharging of the QDs via Auger recombination due to residual light absorption is deactivated by co-pumping the dots with low intensity light.
Understanding chemically processed solar cells based on quantum dots.
Malgras, Victor; Nattestad, Andrew; Kim, Jung Ho; Dou, Shi Xue; Yamauchi, Yusuke
2017-01-01
Photovoltaic energy conversion is one of the best alternatives to fossil fuel combustion. Petroleum resources are now close to depletion and their combustion is known to be responsible for the release of a considerable amount of greenhouse gases and carcinogenic airborne particles. Novel third-generation solar cells include a vast range of device designs and materials aiming to overcome the factors limiting the current technologies. Among them, quantum dot-based devices showed promising potential both as sensitizers and as colloidal nanoparticle films. A good example is the p-type PbS colloidal quantum dots (CQDs) forming a heterojunction with a n-type wide-band-gap semiconductor such as TiO2 or ZnO. The confinement in these nanostructures is also expected to result in marginal mechanisms, such as the collection of hot carriers and generation of multiple excitons, which would increase the theoretical conversion efficiency limit. Ultimately, this technology could also lead to the assembly of a tandem-type cell with CQD films absorbing in different regions of the solar spectrum.
Understanding chemically processed solar cells based on quantum dots
Malgras, Victor; Nattestad, Andrew; Kim, Jung Ho; Dou, Shi Xue; Yamauchi, Yusuke
2017-01-01
Abstract Photovoltaic energy conversion is one of the best alternatives to fossil fuel combustion. Petroleum resources are now close to depletion and their combustion is known to be responsible for the release of a considerable amount of greenhouse gases and carcinogenic airborne particles. Novel third-generation solar cells include a vast range of device designs and materials aiming to overcome the factors limiting the current technologies. Among them, quantum dot-based devices showed promising potential both as sensitizers and as colloidal nanoparticle films. A good example is the p-type PbS colloidal quantum dots (CQDs) forming a heterojunction with a n-type wide-band-gap semiconductor such as TiO2 or ZnO. The confinement in these nanostructures is also expected to result in marginal mechanisms, such as the collection of hot carriers and generation of multiple excitons, which would increase the theoretical conversion efficiency limit. Ultimately, this technology could also lead to the assembly of a tandem-type cell with CQD films absorbing in different regions of the solar spectrum. PMID:28567179
2014-01-01
We investigate coherent single surface-plasmon transport in a metal nanowire strongly coupled to two colloidal quantum dots. Analytical expressions are obtained for the transmission and reflection coefficients by solving the corresponding eigenvalue equation. Remote entanglement of the wave functions of the two quantum dots can be created if the inter-dot distance is equal to a multiple half-wavelength of the surface plasmon. Furthermore, by applying classical laser pulses to the quantum dots...
Quantum state preparation in semiconductor dots by adiabatic rapid passage
Wu, Yanwen; Piper, I.M.; Ediger, M.; Brereton, P.; Schmidgall, E. R.; Hugues, M.; Hopkinson, M.; Phillips, R.T.
2010-01-01
Preparation of a specific quantum state is a required step for a variety of proposed practical uses of quantum dynamics. We report an experimental demonstration of optical quantum state preparation in a semiconductor quantum dot with electrical readout, which contrasts with earlier work based on Rabi flopping in that the method is robust with respect to variation in the optical coupling. We use adiabatic rapid passage, which is capable of inverting single dots to a specified upper level. We d...
Coupled quantum dot-ring structures by droplet epitaxy
Energy Technology Data Exchange (ETDEWEB)
Somaschini, C; Bietti, S; Koguchi, N; Sanguinetti, S, E-mail: stefano.sanguinetti@unimib.it [L-NESS and Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy)
2011-05-06
The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.
DEFF Research Database (Denmark)
Leistikow, M.D.; Johansen, Jeppe; Kettelarij, A.J.;
2009-01-01
, allowing us to determine the size-dependent quantum efficiency and oscillator strength. We find that the quantum efficiency decreases with increasing emission energy mostly due to an increase in nonradiative decay. We manage to obtain the oscillator strength of the important class of CdSe quantum dots....... The oscillator strength varies weakly with frequency in agreement with behavior of quantum dots in the strong confinement limit. Surprisingly, previously calculated tight-binding results differ by a factor of 5 with the measured absolute values. Results from pseudopotential calculations agree well...
Quantum confinement in GaP nanoclusters
Energy Technology Data Exchange (ETDEWEB)
Laurich, B.K.; Smith, D.C.; Healy, M.D.
1994-06-01
We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.
Room Temperature Single-Photon Emission from Individual Perovskite Quantum Dots.
Park, Young-Shin; Guo, Shaojun; Makarov, Nikolay S; Klimov, Victor I
2015-10-27
Lead-halide-based perovskites have been the subject of numerous recent studies largely motivated by their exceptional performance in solar cells. Electronic and optical properties of these materials have been commonly controlled by varying the composition (e.g., the halide component) and/or crystal structure. Use of nanostructured forms of perovskites can provide additional means for tailoring their functionalities via effects of quantum confinement and wave function engineering. Furthermore, it may enable applications that explicitly rely on the quantum nature of electronic excitations. Here, we demonstrate that CsPbX3 quantum dots (X = I, Br) can serve as room-temperature sources of quantum light, as indicated by strong photon antibunching detected in single-dot photoluminescence measurements. We explain this observation by the presence of fast nonradiative Auger recombination, which renders multiexciton states virtually nonemissive and limits the fraction of photon coincidence events to ∼6% on average. We analyze limitations of these quantum dots associated with irreversible photodegradation and fluctuations ("blinking") of the photoluminescence intensity. On the basis of emission intensity-lifetime correlations, we assign the "blinking" behavior to random charging/discharging of the quantum dot driven by photoassisted ionization. This study suggests that perovskite quantum dots hold significant promise for applications such as quantum emitters; however, to realize this goal, one must resolve the problems of photochemical stability and photocharging. These problems are largely similar to those of more traditional quantum dots and, hopefully, can be successfully resolved using advanced methodologies developed over the years in the field of colloidal nanostructures.
Colloidal Quantum Dot Photovoltaics: A Path Forward
Kramer, Illan J.
2011-11-22
Colloidal quantum dots (CQDs) offer a path toward high-efficiency photovoltaics based on low-cost materials and processes. Spectral tunability via the quantum size effect facilitates absorption of specific wavelengths from across the sun\\'s broad spectrum. CQD materials\\' ease of processing derives from their synthesis, storage, and processing in solution. Rapid advances have brought colloidal quantum dot photovoltaic solar power conversion efficiencies of 6% in the latest reports. These achievements represent important first steps toward commercially compelling performance. Here we review advances in device architecture and materials science. We diagnose the principal phenomenon-electronic states within the CQD film band gap that limit both current and voltage in devices-that must be cured for CQD PV devices to fulfill their promise. We close with a prescription, expressed as bounds on the density and energy of electronic states within the CQD film band gap, that should allow device efficiencies to rise to those required for the future of the solar energy field. © 2011 American Chemical Society.
Single photon sources with single semiconductor quantum dots
Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei
2014-04-01
In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.
Novel Photovoltaic Devices Using Ferroelectric Material and Colloidal Quantum Dots
Paik, Young Hun
As the global concern for the financial and environmental costs of traditional energy resources increases, research on renewable energy, most notably solar energy, has taken center stage. Many alternative photovoltaic (PV) technologies for 'the next generation solar cell' have been extensively studied to overcome the Shockley-Queisser 31% efficiency limit as well as tackle the efficiency vs. cost issues. This dissertation focuses on the novel photovoltaic mechanism for the next generation solar cells using two inorganic nanomaterials, nanocrystal quantum dots and ferroelectric nanoparticles. Lead zirconate titanate (PZT) materials are widely studied and easy to synthesize using solution based chemistry. One of the fascinating properties of the PZT material is a Bulk Photovoltaic effect (BPVE). This property has been spotlighted because it can produce very high open circuit voltage regardless of the electrical bandgap of the materials. However, the poor optical absorption of the PZT materials and the required high temperature to form the ferroelectric crystalline structure have been obstacles to fabricate efficient photovoltaic devices. Colloidal quantum dots also have fascinating optical and electrical properties such as tailored absorption spectrum, capability of the bandgap engineering due to the wide range of material selection and quantum confinement, and very efficient carrier dynamics called multiple exciton generations. In order to utilize these properties, many researchers have put numerous efforts in colloidal quantum dot photovoltaic research and there has been remarkable progress in the past decade. However, several drawbacks are still remaining to achieve highly efficient photovoltaic device. Traps created on the large surface area, low carrier mobility, and lower open circuit voltage while increasing the absorption of the solar spectrum is main issues of the nanocrystal based photovoltaic effect. To address these issues and to take the advantages of
Nonequilibrium Electron Transport Through a Quantum Dot from Kubo Formula
Institute of Scientific and Technical Information of China (English)
L(U) Rong; ZHANG Guang-Ming
2005-01-01
Based on the Kubo formula for an electron tunneling junction, we revisit the nonequilibrium transport properties through a quantum dot. Since the Fermi level of the quantum dot is set by the conduction electrons of the leads, we calculate the electron current from the left side by assuming the quantum dot coupled to the right lead as another side of the tunneling junction, and the other way round is used to calculate the current from the right side. By symmetrizing these two currents, an effective local density states on the dot can be obtained, and is discussed at high and low temperatures, respectively.
Implementing of Quantum Cloning with Spatially Separated Quantum Dot Spins
Wen, Jing-Ji; Yeon, Kyu-Hwang; Du, Xin; Lv, Jia; Wang, Ming; Wang, Hong-Fu; Zhang, Shou
2016-07-01
We propose some schemes for implementing optimal symmetric (asymmetric) 1 → 2 universal quantum cloning, optimal symmetric (asymmetric) 1 → 2 phase-covariant cloning, optimal symmetric 1 → 3 economical phase-covariant cloning and optimal symmetric 1 → 3 economical real state cloning with spatially separated quantum dot spins by choosing the single-qubit rotation angles appropriately. The decoherences of the spontaneous emission of QDs, cavity decay and fiber loss are suppressed since the effective long-distance off-resonant interaction between two distant QDs is mediated by the vacuum fields of the fiber and cavity, and during the whole process no system is excited.
Systematic optimization of quantum junction colloidal quantum dot solar cells
Liu, Huan
2012-01-01
The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1 under AM1.5 simulated solar illumination. © 2012 American Institute of Physics.
Quantum model for mode locking in pulsed semiconductor quantum dots
Beugeling, W.; Uhrig, Götz S.; Anders, Frithjof B.
2016-12-01
Quantum dots in GaAs/InGaAs structures have been proposed as a candidate system for realizing quantum computing. The short coherence time of the electronic quantum state that arises from coupling to the nuclei of the substrate is dramatically increased if the system is subjected to a magnetic field and to repeated optical pulsing. This enhancement is due to mode locking: oscillation frequencies resonant with the pulsing frequencies are enhanced, while off-resonant oscillations eventually die out. Because the resonant frequencies are determined by the pulsing frequency only, the system becomes immune to frequency shifts caused by the nuclear coupling and by slight variations between individual quantum dots. The effects remain even after the optical pulsing is terminated. In this work, we explore the phenomenon of mode locking from a quantum mechanical perspective. We treat the dynamics using the central-spin model, which includes coupling to 10-20 nuclei and incoherent decay of the excited electronic state, in a perturbative framework. Using scaling arguments, we extrapolate our results to realistic system parameters. We estimate that the synchronization to the pulsing frequency needs time scales in the order of 1 s .
High-resolution photoluminescence studies of single semiconductor quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis
2000-01-01
Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has dev...
Electron spin and charge in semiconductor quantum dots
Elzerman, J.M.
2004-01-01
In this thesis, the spin and charge degree of freedom of electrons in semiconductor lateral and vertical quantum dots are experimentally investigated. The lateral quantum dot devices are defined in a two-dimensional electron gas (2DEG) below the surface of a GaAs/AlGaAs heterostructure, by metallic
Exciton dephasing in single InGaAs quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis;
2000-01-01
. The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due...
Negative Trions Trapped by a Spherical Parabolic Quantum Dot
Institute of Scientific and Technical Information of China (English)
无
2006-01-01
In this paper, a negatively charged exciton trapped by a spherical parabolic quantum dot has been investigated. The energy spectra of low-lying states are calculated by means of matrix diagonalization. The important feature of the low-lying states of the negatively charged excitons in a spherical quantum dot is obtained via an analysis of the energy spectra.
Imaging vasculature and lymphatic flow in mice using quantum dots
DEFF Research Database (Denmark)
Ballou, Byron; Ernst, Lauren A.; Andreko, Susan
2009-01-01
Quantum dots are ideal probes for fluorescent imaging of vascular and lymphatic tissues. On injection into appropriate sites, red- and near-infrared-emitting quantum dots provide excellent definition of vasculature, lymphoid organs, and lymph nodes draining both normal tissues and tumors. We detail...
Imaging vasculature and lymphatic flow in mice using quantum dots
DEFF Research Database (Denmark)
Ballou, Byron; Ernst, Lauren A.; Andreko, Susan
2009-01-01
Quantum dots are ideal probes for fluorescent imaging of vascular and lymphatic tissues. On injection into appropriate sites, red- and near-infrared-emitting quantum dots provide excellent definition of vasculature, lymphoid organs, and lymph nodes draining both normal tissues and tumors. We deta...
Fast synthesize ZnO quantum dots via ultrasonic method.
Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu
2016-05-01
Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots.
Electron transport and coherence in semiconductor quantum dots and rings
Van der Wiel, W.G.
2002-01-01
A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that
Boda, Aalu; Kumar, D. Sanjeev; Sankar, I. V.; Chatterjee, Ashok
2016-11-01
The problem of a parabolically confined two-dimensional semiconductor GaAs quantum dot with two interacting electrons in the presence of an external magnetic field and the spin-Zeeman interaction is studied using a method of numerical diagonalization. The energy spectrum is calculated as a function of the magnetic field. The magnetic moment (M) and the magnetic susceptibility (χ) show zero temperature diamagnetic peaks due to the exchange induced singlet-triplet transitions. The position and the number of these peaks depend both on the confinement strength of the quantum dot and the strength of the electron-electron interaction (β) .
Nanoengineering the second order susceptibility in semiconductor quantum dot heterostructures.
Zielinski, Marcin; Winter, Shoshana; Kolkowski, Radoslaw; Nogues, Claude; Oron, Dan; Zyss, Joseph; Chauvat, Dominique
2011-03-28
We study second-harmonic generation from single CdTe/CdS core/shell rod-on-dot nanocrystals with different geometrical parameters, which allow to fine tune the nonlinear properties of the nanostructure. These hybrid semiconductor-semiconductor nanoparticles exhibit extremely strong and stable second-harmonic emission, although the size of CdTe core is still within the strong quantum confinement regime. The orientation sensitive polarization response is analyzed by means of a pointwise additive model of the third-order tensors associated to the nanoparticle components. These findings prove that engineering of semiconducting complex heterostructures at the single nanoparticle scale can lead to extremely bright nanometric nonlinear light sources.
Polarization Properties of Quantum-Dot-Based Single Photon Sources
Institute of Scientific and Technical Information of China (English)
HAN Shuo; HAO Zhi-Biao; LUO Yi
2007-01-01
Polarization properties of single photons emitted by optical pumping from a single quantum dot (QD) are studied by using a four-level system model. The model is capable of explaining the polarization uncertainty observed in single photon emission experiments. It is found that the dependence of photon emission efficiency and polarization visibility on pump power are opposite in general cases. By employing QDs with small size and strong carrier confinement, the photon polarization visibility under high pump power can be improved. In addition, embedding a QD into a well designed microcavity is also found to be favourable, whereas the trade-off between high polarization visibility and multi-photon emission is noted.
Quantum computation with nuclear spins in quantum dots
Energy Technology Data Exchange (ETDEWEB)
Christ, H.
2008-01-24
The role of nuclear spins for quantum information processing in quantum dots is theoretically investigated in this thesis. Building on the established fact that the most strongly coupled environment for the potential electron spin quantum bit are the surrounding lattice nuclear spins interacting via the hyperfine interaction, we turn this vice into a virtue by designing schemes for harnessing this strong coupling. In this perspective, the ensemble of nuclear spins can be considered an asset, suitable for an active role in quantum information processing due to its intrinsic long coherence times. We present experimentally feasible protocols for the polarization, i.e. initialization, of the nuclear spins and a quantitative solution to our derived master equation. The polarization limiting destructive interference effects, caused by the collective nature of the nuclear coupling to the electron spin, are studied in detail. Efficient ways of mitigating these constraints are presented, demonstrating that highly polarized nuclear ensembles in quantum dots are feasible. At high, but not perfect, polarization of the nuclei the evolution of an electron spin in contact with the spin bath can be efficiently studied by means of a truncation of the Hilbert space. It is shown that the electron spin can function as a mediator of universal quantum gates for collective nuclear spin qubits, yielding a promising architecture for quantum information processing. Furthermore, we show that at high polarization the hyperfine interaction of electron and nuclear spins resembles the celebrated Jaynes-Cummings model of quantum optics. This result opens the door for transfer of knowledge from the mature field of quantum computation with atoms and photons. Additionally, tailored specifically for the quantum dot environment, we propose a novel scheme for the generation of highly squeezed collective nuclear states. Finally we demonstrate that even an unprepared completely mixed nuclear spin
Gates controlled parallel-coupled bilayer graphene double quantum dot
Wang, Lin-Jun; Wei, Da; Cao, Gang; Tu, Tao; Xiao, Ming; Guo, Guang-Can; Chang, A M
2011-01-01
Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled bilayer graphene double quantum dot. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the bilayer graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.
Dispersion of the electron g factor anisotropy in InAs/InP self-assembled quantum dots
Belykh, V. V.; Yakovlev, D. R.; Schindler, J. J.; van Bree, J.; Koenraad, P. M.; Averkiev, N. S.; Bayer, M.; Silov, A. Yu.
2016-08-01
The electron g factor in an ensemble of InAs/InP quantum dots with emission wavelengths around 1.4 μm is measured using time-resolved pump-probe Faraday rotation spectroscopy in different magnetic field orientations. Thereby, we can extend recent single dot photoluminescence measurements significantly towards lower optical transition energies through 0.86 eV. This allows us to obtain detailed insight into the dispersion of the recently discovered g factor anisotropy in these infrared emitting quantum dots. We find with decreasing transition energy over a range of 50 meV a strong enhancement of the g factor difference between magnetic field normal and along the dot growth axis, namely, from 1 to 1.7. We argue that the g factor cannot be solely determined by the confinement energy, but the dot asymmetry underlying this anisotropy therefore has to increase with increasing dot size.
Self-polarization in spherical quantum dot
Directory of Open Access Journals (Sweden)
Stojanović Dušanka P.
2015-01-01
Full Text Available The electronic structures of CdS quantum dot (QD with dielectric mismatch are calculated. Poisson equation is solved analitically in case of point charge placed inside semiconductor sphere embeded in dielectric matrix in case of different values of the dielectric permittivity of QD and matrix. The validity of the effective mass approximation for the conduction band is assumed. Schrödinger equation for one electron is solved analitically. On the basis of the Poisson equation solution self potential is examined and used as perturbation to calculate the self-polarization effect.
Graphene Quantum Dots for Theranostics and Bioimaging.
Schroeder, Kathryn L; Goreham, Renee V; Nann, Thomas
2016-10-01
Since their advent in the early 1990s, nanomaterials hold promise to constitute improved technologies in the biomedical area. In particular, graphene quantum dots (GQDs) were conjectured to produce new or improve current methods used for bioimaging, drug delivery, and biomarker sensors for early detection of diseases. This review article critically compares and discusses current state-of-the-art use of GQDs in biology and health sciences. It shows the ability of GQDs to be easily functionalised for use as a targeted multimodal treatment and imaging platform. The in vitro and in vivo toxicity of GQDs are explored showing low toxicity for many types of GQDs.
Hyper-parallel photonic quantum computation with coupled quantum dots
Ren, Bao-Cang; Deng, Fu-Guo
2014-01-01
It is well known that a parallel quantum computer is more powerful than a classical one. So far, there are some important works about the construction of universal quantum logic gates, the key elements in quantum computation. However, they are focused on operating on one degree of freedom (DOF) of quantum systems. Here, we investigate the possibility of achieving scalable hyper-parallel quantum computation based on two DOFs of photon systems. We construct a deterministic hyper-controlled-not (hyper-CNOT) gate operating on both the spatial-mode and the polarization DOFs of a two-photon system simultaneously, by exploiting the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics (QED). This hyper-CNOT gate is implemented by manipulating the four qubits in the two DOFs of a two-photon system without auxiliary spatial modes or polarization modes. It reduces the operation time and the resources consumed in quantum information processing, and it is more robust against the photonic dissipation noise, compared with the integration of several cascaded CNOT gates in one DOF. PMID:24721781
Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo; Duque, C. A.
2016-07-01
Excitonic properties are studied in a strained Ga1-xInxNyAs1-y/GaAs cylindrical quantum dot. The optimum condition for the desired band alignment for emitting wavelength 1.55 μm is investigated using band anticrossing model and the model solid theory. The band gap and the band discontinuities of a Ga1-xInxNyAs1-y/GaAs quantum dot on GaAs are computed with the geometrical confinement effect. The binding energy of the exciton, the oscillator strength and its radiative life time for the optimum condition are found taking into account the spatial confinement effect. The effects of geometrical confinement and the nitrogen incorporation on the interband emission energy are brought out. The result shows that the desired band alignment for emitting wavelength 1.55 μm is achieved for the inclusion of alloy contents, y=0.0554% and x=0.339% in Ga1-xInxNyAs1-y/GaAs quantum dot. And the incorporation of nitrogen and indium shows the red-shift and the geometrical confinement shows the blue-shift. And it can be applied for fibre optical communication networks.
Auger recombination in In(Ga)Sb/InAs quantum dots
Energy Technology Data Exchange (ETDEWEB)
Zabel, T., E-mail: zabel@kth.se; Reuterskiöld Hedlund, C.; Gustafsson, O.; Berggren, J.; Ernerheim-Jokumsen, C.; Soldemo, M.; Weissenrieder, J.; Götelid, M.; Hammar, M. [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden); Karim, A.; Wang, Q. [Acreo AB, Electrum 236. 16440 Kista (Sweden)
2015-01-05
We report on the epitaxial formation of type II In{sub 0.5}Ga{sub 0.5}Sb/InAs and InSb/InAs quantum dot ensembles using metal organic vapor phase epitaxy. Employing scanning tunneling spectroscopy, we determine spatial quantum dot dimensions smaller than the de Broglie wavelength of InGaSb, which strongly indicates a three dimensional hole confinement. Photoluminescence spectroscopy at low temperatures yields an enhanced radiative recombination in the mid-infrared regime at energies of 170–200 meV. This luminescence displays a strong excitation power dependence with a blueshift indicating a filling of excited quantum dot hole states. Furthermore, a rate equation model is used to extract the Auger recombination coefficient from the power dependent intensity at 77 K yielding values of 1.35 × 10{sup −28} cm{sup 6}/s for In{sub 0.5}Ga{sub 0.5}Sb/InAs quantum dots and 1.47 × 10{sup −27} cm{sup 6}/s for InSb/InAs quantum dots, which is about one order of magnitude lower as previously obtained values for InGaSb superlattices.
Properties of strong-coupling magneto-bipolaron qubit in quantum dot under magnetic field
Xu-Fang, Bai; Ying, Zhang; Wuyunqimuge; Eerdunchaolu
2016-07-01
Based on the variational method of Pekar type, we study the energies and the wave-functions of the ground and the first-excited states of magneto-bipolaron, which is strongly coupled to the LO phonon in a parabolic potential quantum dot under an applied magnetic field, thus built up a quantum dot magneto-bipolaron qubit. The results show that the oscillation period of the probability density of the two electrons in the qubit decreases with increasing electron-phonon coupling strength α, resonant frequency of the magnetic field ω c, confinement strength of the quantum dot ω 0, and dielectric constant ratio of the medium η the probability density of the two electrons in the qubit oscillates periodically with increasing time t, angular coordinate φ 2, and dielectric constant ratio of the medium η the probability of electron appearing near the center of the quantum dot is larger, and the probability of electron appearing away from the center of the quantum dot is much smaller. Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. E2013407119) and the Items of Institution of Higher Education Scientific Research of Hebei Province and Inner Mongolia, China (Grant Nos. ZD20131008, Z2015149, Z2015219, and NJZY14189).
Colloidal-quantum-dot spasers and plasmonic amplifiers
Kress, Stephan J P; Rohner, Patrik; Kim, David K; Antolinez, Felipe V; Zaininger, Karl-Augustin; Jayanti, Sriharsha V; Richner, Patrizia; McPeak, Kevin M; Poulikakos, Dimos; Norris, David J
2016-01-01
Colloidal quantum dots are robust, efficient, and tunable emitters now used in lighting, displays, and lasers. Consequently, when the spaser, a laser-like source of surface plasmons, was first proposed, quantum dots were specified as the ideal plasmonic gain medium. Subsequent spaser designs, however, have required a single material to simultaneously provide gain and define the plasmonic cavity, an approach ill-suited to quantum dots and other colloidal nanomaterials. Here we develop a more open architecture that decouples the gain medium from the cavity, leading to a versatile class of quantum-dot-based spasers that allow controlled generation, extraction, and manipulation of plasmons. We first create high-quality-factor, aberration-corrected, Ag plasmonic cavities. We then incorporate quantum dots via electrohydrodynamic printing18,19 or drop-casting. Photoexcitation under ambient conditions generates monochromatic plasmons above threshold. This signal is extracted, directed through an integrated amplifier,...
Non-blinking quantum dot with a plasmonic nanoshell resonator
Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit
2015-02-01
Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.
Second-harmonic imaging of semiconductor quantum dots
DEFF Research Database (Denmark)
Østergaard, John Erland; Bozhevolnyi, Sergey I.; Pedersen, Kjeld;
2000-01-01
Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum....... In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further...... observe that second-harmonic images of the quantum-dot surface structure show wavelength-dependent spatial variations. Imaging at different wavelength is used to demonstrate second-harmonic generation from the semiconductor quantum dots. (C) 2000 American Institute of Physics....
Quantum dots in diagnostics and detection: principles and paradigms.
Pisanic, T R; Zhang, Y; Wang, T H
2014-06-21
Quantum dots are semiconductor nanocrystals that exhibit exceptional optical and electrical behaviors not found in their bulk counterparts. Following seminal work in the development of water-soluble quantum dots in the late 1990's, researchers have sought to develop interesting and novel ways of exploiting the extraordinary properties of quantum dots for biomedical applications. Since that time, over 10,000 articles have been published related to the use of quantum dots in biomedicine, many of which regard their use in detection and diagnostic bioassays. This review presents a didactic overview of fundamental physical phenomena associated with quantum dots and paradigm examples of how these phenomena can and have been readily exploited for manifold uses in nanobiotechnology with a specific focus on their implementation in in vitro diagnostic assays and biodetection.