Amorphization of silicon by femtosecond laser pulses

International Nuclear Information System (INIS)

Jia, Jimmy; Li Ming; Thompson, Carl V.

2004-01-01

We have used femtosecond laser pulses to drill submicron holes in single crystal silicon films in silicon-on-insulator structures. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis of material adjacent to the ablated holes indicates the formation of a layer of amorphous Si. This demonstrates that even when material is ablated using femtosecond pulses near the single pulse ablation threshold, sufficient heating of the surrounding material occurs to create a molten zone which solidifies so rapidly that crystallization is bypassed

Structural characterization of AlN films synthesized by pulsed laser deposition

International Nuclear Information System (INIS)

Szekeres, A.; Fogarassy, Zs.; Petrik, P.; Vlaikova, E.; Cziraki, A.; Socol, G.; Ristoscu, C.; Grigorescu, S.; Mihailescu, I.N.

2011-01-01

We obtained AlN thin films by pulsed laser deposition (PLD) from a polycrystalline AlN target using a pulsed KrF* excimer laser source (248 nm, 25 ns, intensity of ∼4 x 10 8 W/cm 2 , repetition rate 3 Hz, 10 J/cm 2 laser fluence). The target-Si substrate distance was 5 cm. Films were grown either in vacuum (10 -4 Pa residual pressure) or in nitrogen at a dynamic pressure of 0.1 and 10 Pa, using a total of 20,000 subsequent pulses. The films structure was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectral ellipsometry (SE). Our TEM and XRD studies showed a strong dependence of the film structure on the nitrogen content in the ambient gas. The films deposited in vacuum exhibited a high quality polycrystalline structure with a hexagonal phase. The crystallite growth proceeds along the c-axis, perpendicular to the substrate surface, resulting in a columnar and strongly textured structure. The films grown at low nitrogen pressure (0.1 Pa) were amorphous as seen by TEM and XRD, but SE data analysis revealed ∼1.7 vol.% crystallites embedded in the amorphous AlN matrix. Increasing the nitrogen pressure to 10 Pa promotes the formation of cubic (≤10 nm) crystallites as seen by TEM but their density was still low to be detected by XRD. SE data analysis confirmed the results obtained from the TEM and XRD observations.

Tungsten oxide nanowires grown on amorphous-like tungsten films

International Nuclear Information System (INIS)

Dellasega, D; Pezzoli, A; Russo, V; Passoni, M; Pietralunga, S M; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A

2015-01-01

Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500–710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W_1_8O_4_9-Magneli phase to monoclinic WO_3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. (paper)

Topography evolution of germanium thin films synthesized by pulsed laser deposition

Directory of Open Access Journals (Sweden)

P. Schumacher

2017-04-01

Full Text Available Germanium thin films were deposited by Pulsed Laser Deposition (PLD onto single crystal Ge (100 and Si (100 substrates with a native oxide film on the surface. The topography of the surface was investigated by Atomic Force Microscopy (AFM to evaluate the scaling behavior of the surface roughness of amorphous and polycrystalline Ge films grown on substrates with different roughnesses. Roughness evolution was interpreted within the framework of stochastic rate equations for thin film growth. Here the Kardar-Parisi-Zhang equation was used to describe the smoothening process. Additionally, a roughening regime was observed in which 3-dimensional growth occurred. Diffusion of the deposited Ge adatoms controlled the growth of the amorphous Ge thin films. The growth of polycrystalline thin Ge films was dominated by diffusion processes only in the initial stage of the growth.

Hydrogenated amorphous carbon next deposit after heat treatment

International Nuclear Information System (INIS)

Salancon, E.; Durbeck, T.; Schwarz-Selinger, T.; Jacob, W.

2006-01-01

One of the main safety problems in the ITER tokamak project is the tritium adsorption in the reactor walls and in particular the deposits which appear after the plasma discharge. These deposits are amorphous hydrogenated carbon films, type polymer (soft a-C:H). The heating of these deposits with a pulse laser is a proposed solution for the tritium desorption. Meanwhile, Gibson and al show that in experimental conditions, products are deposed on the walls before entering the mass spectrometer. The authors present thermo-desorption spectra of different amorphous carbon films. (A.L.B.)

Optical waveguide based on amorphous Er{sup 3+}-doped Ga-Ge-Sb-S(Se) pulsed laser deposited thin films

Energy Technology Data Exchange (ETDEWEB)

Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.f [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Nemec, P. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Jurdyc, A.M [Laboratoire de Physico-Chimie des Materiaux Luminescents (LPCML), UMR CNRS 5620, Universite Claude Bernard-Lyon 1, Villeurbanne (France); Zhang, S.; Charpentier, F. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Lhermite, H. [IETR-Microelectronique, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Charrier, J. [FOTON, UMR 6082-ENSSAT, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Guin, J.P. [LARMAUR, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Frumar, M. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Adam, J.-L. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France)

2010-06-30

Amorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits due to their potential functionality in near infrared (IR) and mid-IR spectral regions. More specifically, the photoluminescence of rare earth ions in amorphous chalcogenide films can be used in laser and amplifier devices in the IR spectral domain. The aim of the present investigation was to optimize the deposition conditions for the fabrication of undoped and Er{sup 3+} doped sulphide and selenide thin films with nominal composition Ga{sub 5}Ge{sub 20}Sb{sub 10}S(Se){sub 65} or Ga{sub 5}Ge{sub 23}Sb{sub 5}S{sub 67} by pulsed laser deposition (PLD). The study of compositional, morphological and structural characteristics of the layers was realized by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy and Raman spectroscopy analyses, respectively. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and optical losses were investigated as well. The clear identification of near-IR photoluminescence of Er{sup 3+} ions was obtained for both selenide and sulphide films. The decay of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition at 1.54 {mu}m in Er{sup 3+} doped Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} PLD sulphide films was studied to assess the effects of film thickness, rare earth concentration and multilayer PLD deposition on their spectroscopic properties.

Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

Energy Technology Data Exchange (ETDEWEB)

Li, T. T., E-mail: li48@llnl.gov; Bayu Aji, L. B.; Heo, T. W.; Kucheyev, S. O.; Campbell, G. H. [Materials Science Division, Lawrence Livermore National Laboratory, 7000 East Ave., Livermore, California 94551 (United States); Santala, M. K. [Mechanical, Industrial, and Manufacturing Engineering, Oregon State University, 204 Rogers Hall, Corvallis, Oregon 97331 (United States)

2016-05-30

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar{sup +} ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. The propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

International Nuclear Information System (INIS)

Li, T. T.; Bayu Aji, L. B.; Heo, T. W.; Kucheyev, S. O.; Campbell, G. H.; Santala, M. K.

2016-01-01

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar"+ ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. The propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

OpenAIRE

Meilkhova, O.; Čížek, J.; Lukáč,, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

2013-01-01

ZnO films with thickness of ~80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects...

Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications

Energy Technology Data Exchange (ETDEWEB)

Němec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Charrier, J. [FOTON, UMR CNRS 6082, Enssat, 6 rue de Kerampont, BP 80518, 22305 Lannion (France); Cathelinaud, M. [Missions des Ressources et Compétences Technologiques, UPS CNRS 2274, 92195 Meudon (France); Allix, M. [CEMHTI-CNRS, Site Haute Température, Orléans (France); Adam, J.-L.; Zhang, S. [Equipe Verres et Céramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Université de Rennes 1, 35042 Rennes Cedex (France); Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.fr [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Equipe Verres et Céramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Université de Rennes 1, 35042 Rennes Cedex (France)

2013-07-31

Amorphous chalcogenide and alumino-silicate thin films were fabricated by the pulsed laser deposition technique. Prepared films were characterized in terms of their morphology, chemical composition, and optical properties. Multilayered thin film stacks for reflectors and vertical microcavities were designed for telecommunication wavelength and the window of atmosphere transparency (band II) at 1.54 μm and 4.65 μm, respectively. Bearing in mind the benefit coming from the opportunity of an efficient wavelength tuning or, conversely, to stabilize the photoinduced effects in chalcogenide films as well as to improve their mechanical properties and/or their chemical durability, several pairs of materials from pure chalcogenide layers to chalcogenide/oxide layers were investigated. Different layer stacks were fabricated in order to check the compatibility between dissimilar materials which can have a strong influence on the interface roughness, adhesion, density, and homogeneity, for instance. Three different reflector designs were formulated and tested including all-chalcogenide layers (As{sub 40}Se{sub 60}/Ge{sub 25}Sb{sub 5}S{sub 70}) and mixed chalcogenide-oxide layers (As{sub 40}Se{sub 60}/alumino-silicate and Ga{sub 10}Ge{sub 15}Te{sub 75}/alumino-silicate). Prepared multilayers showed good compatibility between different material pairs deposited by laser ablation despite the diversity of chemical compositions. As{sub 40}Se{sub 60}/alumino-silicate reflector showed the best parameters; its stop band (R > 97% at 8° off-normal incidence) has a bandwidth of ∼ 100 nm and it is centered at 1490 nm. The quality of the different mirrors developed was good enough to try to obtain a microcavity structure for the 1.5 μm telecommunication wavelength made of chalcogenide layers. The microcavity structure consists of Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} (doped with 5000 ppm of Er{sup 3+}) spacer surrounded by two 10-layer As{sub 40}Se{sub 60}/Ge{sub 25}Sb{sub 5}S{sub 70

Amorphous-polycrystal transition induced by laser pulse in self-ion implanted silicon

International Nuclear Information System (INIS)

Foti, G.; Rimini, E.; Vitali, G.; Bertolotti, M.

1977-01-01

Reflection high energy electron diffraction has been used to investigate the amorphous to polycrystalline structure transition in silicon induced by laser pulse. The power density of the ruby laser pulse, in the free generation mode, has been maintained below the threshold to induce surface damage. Depth analysis has been carried out in silicon crystal using the channeling effect technique. (orig.) [de

Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions

Science.gov (United States)

Majewska, N.; Gazda, M.; Jendrzejewski, R.; Majumdar, S.; Sawczak, M.; Śliwiński, G.

2017-08-01

Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1% wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.

Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals

KAUST Repository

Baumgardner, William J.

2011-09-27

We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC films relative to bulk-like PbSe films. We found that laser pulse fluences in the range of 30 to 200 mJ/cm2 create a processing window of opportunity where the NC film morphology goes through interesting transformations without large-scale coalescence of the NCs. NC coalescence can be mitigated by depositing a thin film of amorphous silicon (a-Si) on the NC film. Remarkably, pulsed laser annealing of the a-Si/PbSe NC films crystallized the silicon while NC morphology and translational order of the NC film are preserved. © 2011 American Chemical Society.

Room temperature growth of biaxially aligned yttria-stabilized zirconia films on glass substrates by pulsed-laser deposition

CERN Document Server

Li Peng; Mazumder, J

2003-01-01

Room temperature deposition of biaxially textured yttria-stabilized zirconia (YSZ) films on amorphous glass substrates was successfully achieved by conventional pulsed-laser deposition. The influence of the surrounding gases, their pressure and the deposition time on the structure of the films was studied. A columnar growth process was revealed based on the experimental results. The grown biaxial texture appears as a kind of substrate independence, which makes it possible to fabricate in-plane aligned YSZ films on various substrates.

Role of temperature and energy density in the pulsed laser deposition of zirconium oxide thin film

International Nuclear Information System (INIS)

Mittra, Joy; Abraham, G.J.; Viswanadham, C.S.; Kulkarni, U.D.; Dey, G.K.

2011-01-01

Present work brings out the effects of energy density and substrate temperature on pulsed laser deposition of zirconium oxide thin film on Zr-base alloy substrates. The ablation of sintered zirconia has been carried out using a KrF excimer laser having 30 ns pulse width and 600 mJ energy at source at 10 Hz repetition rate. To comprehend effects of these parameters on the synthesized thin film, pure zirconia substrate has been ablated at two different energy densities, 2 J.cm -2 and 5 J.cm -2 , keeping the substrate at 300 K, 573 K and 873 K, respectively. After visual observation, deposited thin films have been examined using Raman Spectroscopy (RS) and X-ray Photo-electron Spectroscopy (XPS). It has been found that the oxide deposited at 300 K temperature does not show good adherence with the substrate and deteriorates further with the reduction in energy density of the incident laser. The oxide films, deposited at 573 K and 873 K, have been found to be adherent with the substrate and appear lustrous black. These indicate that the threshold for adherence of the zirconia film on the Zr-base alloy substrate lies in between 300 K and 573 K. Analysis of Raman spectra has indicated that thin films of zirconia, deposited using pulsed laser, on the Zr-base metallic substrate are initially in amorphous state. Experimental evidence has indicated a strong link among the degree of crystallinity of the deposited oxide film, the substrate temperature and the energy density. It also has shown that the crystallization of the oxide film is dependent on the substrate temperature and the duration of holding at high temperature. The O:Zr ratios of the films, analyzed from the XPS data, have been found to be close to but less than 2. This appears to explain the reason for the transformation of amorphous oxide into monoclinic and tetragonal phases, below 573 K, and not into cubic phase, which is reported to be more oxygen deficient. (author)

Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

International Nuclear Information System (INIS)

Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto

2002-01-01

The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

Pulsed laser ablation and deposition of niobium carbide

International Nuclear Information System (INIS)

Sansone, M.; De Bonis, A.; Santagata, A.; Rau, J.V.; Galasso, A.; Teghil, R.

2016-01-01

Highlights: • We have deposited in vacuum niobium carbide films by fs and ns PLD. • We have compared PLD performed by ultra-short and short laser pulses. • The films deposited by fs PLD of NbC are formed by nanoparticles. • The structure of the films produced by fs PLD at 500 °C corresponds to NbC. - Abstract: NbC crystalline films have been deposited in vacuum by ultra-short pulsed laser deposition technique. The films have been characterized by transmission and scanning electron microscopies and by X-ray diffraction. To clarify the ablation–deposition mechanism, the plasma produced by the ablation process has been characterized by optical emission spectroscopy and fast imaging. A comparison of the results with those obtained by ns pulsed deposition of the same target has been carried out.

Defect studies of thin ZnO films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

2014-01-01

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Reactive pulsed laser deposition with gas jet

International Nuclear Information System (INIS)

Rakowski, R.; Bartnik, A.; Fiedorowicz, H.; Jarocki, R.; Kostecki, J.; Szczurek, M.

2001-01-01

Different metal (Sn, Al, steel, Cu, W) thin films were synthesized by reactive pulsed laser deposition on steel, copper and glass wafers. In our work pulsed Nd:glass (10 J, 800μs) laser system was used. Jet of gas was created by electromagnetic valve perpendicularly to the laser beam. Nitrogen, oxygen and argon were used. We used several to tens laser shots to obtain visible with the naked eye layers. Thin layers were observed under an optical microscope. (author)

Properties of pulsed laser deposited NiO/MWCNT thin films

CSIR Research Space (South Africa)

Yalisi, B

2011-05-01

Full Text Available Pulsed laser deposition (PLD) is a thin-film deposition technique, which uses short and intensive laser pulses to evaporate target material. The technique has been used in this work to produce selective solar absorber (SSA) thin film composites...

Chromium-doped diamond-like carbon films deposited by dual-pulsed laser deposition

Czech Academy of Sciences Publication Activity Database

Písařík, Petr; Jelínek, Miroslav; Kocourek, Tomáš; Zezulová, M.; Remsa, Jan; Jurek, Karel

2014-01-01

Roč. 117, č. 1 (2014), s. 83-88 ISSN 0947-8396 R&D Projects: GA MŠk LD12069 Institutional support: RVO:68378271 Keywords : diamond like carbon * chromium * contact angle * surface free energy * dual laser deposition * zeta potential Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2014

Synthesis of nanostructured SiC using the pulsed laser deposition technique

International Nuclear Information System (INIS)

Zhang, H.X.; Feng, P.X.; Makarov, V.; Weiner, B.R.; Morell, G.

2009-01-01

We report the new results on the direct synthesis of nanostructured silicon carbide (SiC) materials using the pulsed laser deposition technique. Scanning electron microscopy images revealed that SiC nanoholes, nanosprouts, nanowires, and nanoneedles were obtained. The crystallographic structure, chemical composition, and bond structure of the nanoscale SiC materials were investigated using X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering spectroscopy. The transverse optical mode and longitudinal optical mode in Raman spectra were found to become sharper as the substrate temperature was increased, while the material structure evolved from amorphous to crystalline

Diamond-like carbon prepared by pulsed laser deposition with ion bombardment: physical properties

Science.gov (United States)

Písařík, P.; Mikšovský, J.; Remsa, J.; Zemek, J.; Tolde, Z.; Jelínek, M.

2018-01-01

Diamond-like carbon (DLC) and titanium-doped DLC thin films were prepared by unique hybrid system consisting of pulsed laser deposition, ion source (bombardment) and magnetron sputtering. The influence of deposition parameters (ion energies, deposition pressures and magnetron power) on composition and physical properties was studied. Composition and sp 3/ sp 2 ratio were determined by XPS. sp 3/ sp 2 ratio was in the range from 1.4 to 2.2 for undoped DLC and from 3.4 to 4.8 for Ti-DLC. AFM showed that the layers were smooth, but with small amounts of random droplets. The measurements of the contact angle and determination of surface free energy were made for water, diiodomethane and ethylene glycol. Hardness and reduced Young's modulus varied from 20 to 31 GPa and from 182 to 276 GPa, respectively. Film adhesion was determined by scratch test; L C3 reached 23 N for DLC and 27 N for TiDLC. Optimization of sp 3/ sp 2 ratio, hardness and adhesion to biomedical alloys will advance the DLC coatings usability in the field of implantology.

Aluminosilicate glass thin films elaborated by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Carlier, Thibault [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Saitzek, Sébastien [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Méar, François O., E-mail: francois.mear@univ-lille1.fr [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Blach, Jean-François; Ferri, Anthony [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Huvé, Marielle; Montagne, Lionel [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France)

2017-03-01

Highlights: • Successfully deposition of a glassy thin film by PLD. • A good homogeneity and stoichiometry of the coating. • Influence of the deposition temperature on the glassy thin-film structure. - Abstract: In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

Stabilizing laser energy density on a target during pulsed laser deposition of thin films

Science.gov (United States)

Dowden, Paul C.; Jia, Quanxi

2016-05-31

A process for stabilizing laser energy density on a target surface during pulsed laser deposition of thin films controls the focused laser spot on the target. The process involves imaging an image-aperture positioned in the beamline. This eliminates changes in the beam dimensions of the laser. A continuously variable attenuator located in between the output of the laser and the imaged image-aperture adjusts the energy to a desired level by running the laser in a "constant voltage" mode. The process provides reproducibility and controllability for deposition of electronic thin films by pulsed laser deposition.

Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

2012-01-01

Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

International Nuclear Information System (INIS)

Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R.M.

2015-01-01

Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence

Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

Energy Technology Data Exchange (ETDEWEB)

Aronne, Antonio [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Bloisi, Francesco, E-mail: bloisi@na.infn.it [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy); Calabria, Raffaela; Califano, Valeria [Istituto Motori – CNR, Naples (Italy); Depero, Laura E. [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Fanelli, Esther [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Federici, Stefania [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Massoli, Patrizio [Istituto Motori – CNR, Naples (Italy); Vicari, Luciano R.M. [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy)

2015-05-01

Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

Pulsed Laser Deposition: passive and active waveguides

Czech Academy of Sciences Publication Activity Database

Jelínek, Miroslav; Flory, F.; Escoubas, L.

2009-01-01

Roč. 34, č. 4 (2009), s. 438-449 ISSN 0268-1900 R&D Projects: GA ČR GA202/06/0216 Institutional research plan: CEZ:AV0Z10100522 Keywords : PLD * pulsed laser deposition * laser ablation * passive waveguides * active waveguides * waveguide laser * sensors * thin films * butane detection Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.384, year: 2009

Particle growth mechanisms in Ag-ZrO2 and Au-ZrO2 granular films obtained by pulsed laser deposition

International Nuclear Information System (INIS)

Konstantinovic, Zorica; Muro, Montserrat Garcia del; Varela, Manuel; Batlle, Xavier; Labarta, AmIlcar

2006-01-01

Thin films consisting of Ag and Au nanoparticles embedded in amorphous ZrO 2 matrix were grown by pulsed laser deposition in a wide range of metal volume concentrations in the dielectric regime (0.08 Ag Au c (Ag)∼0.28 and x c (Au)∼0.52)

25 years of pulsed laser deposition

Science.gov (United States)

Lorenz, Michael; Ramachandra Rao, M. S.

2014-01-01

It is our pleasure to introduce this special issue appearing on the occasion of the 25th anniversary of pulsed laser deposition (PLD), which is today one of the most versatile growth techniques for oxide thin films and nanostructures. Ever since its invention, PLD has revolutionized the research on advanced functional oxides due to its ability to yield high-quality thin films, multilayers and heterostructures of a variety of multi-element material systems with rather simple technical means. We appreciate that the use of lasers to deposit films via ablation (now termed PLD) has been known since the 1960s after the invention of the first ruby laser. However, in the first two decades, PLD was something of a 'sleeping beauty' with only a few publications per year, as shown below. This state of hibernation ended abruptly with the advent of high T c superconductor research when scientists needed to grow high-quality thin films of multi-component high T c oxide systems. When most of the conventional growth techniques failed, the invention of PLD by T (Venky) Venkatesan clearly demonstrated that the newly discovered high-T c superconductor, YBa2Cu3O7-δ , could be stoichiometrically deposited as a high-quality nm-thin film with PLD [1]. As a remarkable highlight of this special issue, Venkatesan gives us his very personal reminiscence on these particularly innovative years of PLD beginning in 1986 [2]. After Venky's first paper [1], the importance of this invention was realized worldwide and the number of publications on PLD increased exponentially, as shown in figure 1. Figure 1. Figure 1. Published items per year with title or topic PLD. Data from Thomson Reuters Web of Knowledge in September 2013. After publication of Venky's famous paper in 1987 [1], the story of PLD's success began with a sudden jump in the number of publications, about 25 years ago. A first PLD textbook covering its basic understanding was soon published, in 1994, by Chrisey and Hubler [3]. Within a

Hydroxyapatite thin films grown by pulsed laser deposition and matrix assisted pulsed laser evaporation: Comparative study

Science.gov (United States)

Popescu-Pelin, G.; Sima, F.; Sima, L. E.; Mihailescu, C. N.; Luculescu, C.; Iordache, I.; Socol, M.; Socol, G.; Mihailescu, I. N.

2017-10-01

Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates. All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = 248 nm, τFWHM ≈ 25 ns). Half of the samples were post-deposition thermally treated at 500 °C in a flux of water vapours in order to restore crystallinity and improve adherence. Coating surface morphologies and topographies specific to the deposition method were evidenced by scanning electron, atomic force microscopy investigations and profilometry. They were shown to depend on deposition technique and also on the post-deposition treatment. Crystalline structure of the coatings evaluated by X-ray diffraction was improved after thermal treatment. Biocompatibility of coatings, cellular adhesion, proliferation and differentiation tests were conducted using human mesenchymal stem cells (MSCs). Results showed that annealed MAPLE deposited HA coatings were supporting MSCs proliferation, while annealed PLD obtained films were stimulating osteogenic differentiation.

Comparative study on Pulsed Laser Deposition and Matrix Assisted Pulsed Laser Evaporation of urease thin films

International Nuclear Information System (INIS)

Smausz, Tomi; Megyeri, Gabor; Kekesi, Renata; Vass, Csaba; Gyoergy, Eniko; Sima, Felix; Mihailescu, Ion N.; Hopp, Bela

2009-01-01

Urease thin films were produced by Matrix Assisted Pulsed Laser Evaporation (MAPLE) and Pulsed Laser Deposition from two types of targets: frozen water solutions of urease with different concentrations (1-10% m/v) and pure urease pellets. The fluence of the ablating KrF excimer laser was varied between 300 and 2200 mJ/cm 2 . Fourier transform infrared spectra of the deposited films showed no difference as compared to the original urease. Morphologic studies proved that the films consist of a smooth 'base' layer with embedded micrometer-sized droplets. Absorption-coefficient measurements contradicted the traditional 'absorptive matrix' model for MAPLE deposition. The laser energy was absorbed by urease clusters leading to a local heating-up and evaporation of the frozen matrix from the uppermost layer accompanied by the release of dissolved urease molecules. Significant enzymatic activity of urease was preserved only during matrix assisted transfer.

Applications of ultra-short pulsed laser ablation: thin films deposition and fs/ns dual-pulse laser-induced breakdown spectroscopy

International Nuclear Information System (INIS)

Teghil, R; De Bonis, A; Galasso, A; Santagata, A; Albano, G; Villani, P; Spera, D; Parisi, G P

2008-01-01

In this paper, we report a survey of two of the large number of possible practical applications of the laser ablation performed by an ultra-short pulse laser, namely pulsed laser deposition (PLD) and fs/ns dual-pulse laser-induced breakdown spectroscopy (DP-LIBS). These applications differ from those using just longer pulsed lasers as a consequence of the distinctive characteristics of the plasma produced by ultra-short laser beams. The most important feature of this plasma is the large presence of particles with nanometric size which plays a fundamental role in both applications.

Directed dewetting of amorphous silicon film by a donut-shaped laser pulse

International Nuclear Information System (INIS)

Yoo, Jae-Hyuck; Zheng, Cheng; Grigoropoulos, Costas P; In, Jung Bin; Sakellari, Ioanna; Raman, Rajesh N; Matthews, Manyalibo J; Elhadj, Selim

2015-01-01

Irradiation of a thin film with a beam-shaped laser is proposed to achieve site-selectively controlled dewetting of the film into nanoscale structures. As a proof of concept, the laser-directed dewetting of an amorphous silicon thin film on a glass substrate is demonstrated using a donut-shaped laser beam. Upon irradiation of a single laser pulse, the silicon film melts and dewets on the substrate surface. The irradiation with the donut beam induces an unconventional lateral temperature profile in the film, leading to thermocapillary-induced transport of the molten silicon to the center of the beam spot. Upon solidification, the ultrathin amorphous silicon film is transformed to a crystalline silicon nanodome of increased height. This morphological change enables further dimensional reduction of the nanodome as well as removal of the surrounding film material by isotropic silicon etching. These results suggest that laser-based dewetting of thin films can be an effective way for scalable manufacturing of patterned nanostructures. (paper)

Directed dewetting of amorphous silicon film by a donut-shaped laser pulse.

Science.gov (United States)

Yoo, Jae-Hyuck; In, Jung Bin; Zheng, Cheng; Sakellari, Ioanna; Raman, Rajesh N; Matthews, Manyalibo J; Elhadj, Selim; Grigoropoulos, Costas P

2015-04-24

Irradiation of a thin film with a beam-shaped laser is proposed to achieve site-selectively controlled dewetting of the film into nanoscale structures. As a proof of concept, the laser-directed dewetting of an amorphous silicon thin film on a glass substrate is demonstrated using a donut-shaped laser beam. Upon irradiation of a single laser pulse, the silicon film melts and dewets on the substrate surface. The irradiation with the donut beam induces an unconventional lateral temperature profile in the film, leading to thermocapillary-induced transport of the molten silicon to the center of the beam spot. Upon solidification, the ultrathin amorphous silicon film is transformed to a crystalline silicon nanodome of increased height. This morphological change enables further dimensional reduction of the nanodome as well as removal of the surrounding film material by isotropic silicon etching. These results suggest that laser-based dewetting of thin films can be an effective way for scalable manufacturing of patterned nanostructures.

Growth parameter enhancement for MoS{sub 2} thin films synthesized by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Serna, Martha I.; Higgins, Marissa; Quevedo-Lopez, Manuel A. [Materials Science and Engineering Department, The University of Texas at Dallas, 800 W Campbell Road RL 10, Richardson TX 75080 (United States); Moreno, Salvador [Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, TX 75080 (United States); Choi, Hyunjoo [Department of Advanced Materials Engineering, Kookmin University, Jeongneung-dong Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Minary-Jolandan, Majid [Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, TX 75080 (United States); Alan MacDiarmid Nanotech Institute, The University of Texas at Dallas, 800 W Campbell Road RL 10, Richardson TX 75080 (United States)

2016-12-15

Two-dimensional materials such as graphene and MoS{sub 2} have been the main focus of intense research efforts over the past few years. The most common method of exfoliating these materials, although efficient for lab-scale experiments, is not acceptable for large area and practical applications. Here, we report the deposition of MoS{sub 2} layered films on amorphous (SiO{sub 2}) and crystalline substrates (sapphire) using a pulsed laser deposition (PLD) method. Increased substrate temperature (∝700 C) and laser energy density (>530 mJ /cm{sup 2}) promotes crystalline MoS{sub 2} films < 20 nm, as demonstrated by fast Fourier transform (FFT) and transmission electron microscopy (TEM). The method reported here opens the possibility for large area layered MoS{sub 2} films by using a laser ablation processes. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Resonant infrared pulsed laser deposition of a polyimide precursor

Energy Technology Data Exchange (ETDEWEB)

Dygert, N L; Schriver, K E; Jr, R F Haglund [Department of Physics and Astronomy and W M Keck Foundation Free-Electron Laser Centre, Vanderbilt University, Nashville TN 37235 (United States)

2007-04-15

Poly(amic acid) (PAA), a precursor to polyimide, was successfully deposited on substrates without reaching curing temperature, by resonant infrared pulsed laser ablation. The PAA was prepared by dissolving pyromellitic dianhydride and 4, 4' oxidianiline in the polar solvent Nmethyl pyrrolidinone (NMP). The PAA was deposited in droplet-like morphologies when ablation occurred in air, and in string-like moieties in the case of ablation in vacuum. In the as-deposited condition, the PAA was easily removed by washing with NMP; however, once cured thermally for thirty minutes, the PAA hardened, indicating the expected thermosetting property. Plume shadowgraphy showed very clear contrasts in the ablation mechanism between ablation of the solvent alone and the ablation of the PAA, even at low concentrations. A Wavelength dependence in plume velocity was also observed.

Ultrashort pulse laser deposition of thin films

Science.gov (United States)

Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

2002-01-01

Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

Excimer pulsed laser deposition and annealing of YSZ nanometric films on Si substrates

International Nuclear Information System (INIS)

Caricato, A.P.; Barucca, G.; Di Cristoforo, A.; Leggieri, G.; Luches, A.; Majni, G.; Martino, M.; Mengucci, P.

2005-01-01

We report experimental results obtained for electrical and structural characteristics of yttria-stabilised zirconia (YSZ) thin films deposited by pulsed laser deposition (PLD) on Si substrates at room temperature. Some samples were submitted to thermal treatments in different ambient atmospheres (vacuum, N 2 and O 2 ) at a moderate temperature. The effects of thermal treatments on the film electrical properties were studied by C-V and I-V measurements. Structural characteristics were obtained by X-ray diffraction (XRD), X-ray reflectivity (XRR) and transmission electron microscopy (TEM) analyses. The as-deposited film was amorphous with an in-depth non-uniform density. The annealed films became polycrystalline with a more uniform density. The sample annealed in O 2 was uniform over all the thickness. Electrical characterisation showed large hysteresis, high leakage current and positive charges trapped in the oxide in the as-deposited film. Post-deposition annealing, especially in O 2 atmosphere, improved considerably the electrical properties of the films

Effects of laser fluence on the structural properties of pulsed laser deposited ruthenium thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, Wai-Keat; Wong, Hin-Yong; Chan, Kah-Yoong; Tou, Teck-Yong [Multimedia University, Centre for Advanced Devices and Systems (CADS), Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yong, Thian-Khok [Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Setapak, Kuala Lumpur (Malaysia); Yap, Seong-Shan [Norwegian University of Science and Technology, Institute of Physics, Trondheim (Norway)

2010-08-15

Ruthenium (Ru) has received great interest in recent years for applications in microelectronics. Pulsed laser deposition (PLD) enables the growth of Ru thin films at low temperatures. In this paper, we report for the first time the characterization of pulsed laser deposited Ru thin films. The deposition processes were carried out at room temperature in vacuum environment for different durations with a pulsed Nd:YAG laser of 355-nm laser wavelength, employing various laser fluences ranging from 2 J/cm{sup 2} to 8 J/cm{sup 2}. The effect of the laser fluence on the structural properties of the deposited Ru films was investigated using surface profilometry, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Ru droplets, some spherical in shape and some flattened into round discs were found on the deposited Ru. The droplets were correlated to ripple formations on the target during the laser-induced ejection from the target. In addition, crystalline Ru with orientations of (100), (101), and (002) was observed in the XRD spectra and their intensities were found to increase with increasing laser fluence and film thickness. Grain sizes ranging from 20 nm to 35 nm were deduced using the Scherrer formula. Optical emission spectroscopy (OES) and energy-dispersive X-ray spectroscopy (EDS) show that the composition of the plume and the deposited Ru film was of high purity. (orig.)

Effects of laser fluence on the structural properties of pulsed laser deposited ruthenium thin films

International Nuclear Information System (INIS)

Lee, Wai-Keat; Wong, Hin-Yong; Chan, Kah-Yoong; Tou, Teck-Yong; Yong, Thian-Khok; Yap, Seong-Shan

2010-01-01

Ruthenium (Ru) has received great interest in recent years for applications in microelectronics. Pulsed laser deposition (PLD) enables the growth of Ru thin films at low temperatures. In this paper, we report for the first time the characterization of pulsed laser deposited Ru thin films. The deposition processes were carried out at room temperature in vacuum environment for different durations with a pulsed Nd:YAG laser of 355-nm laser wavelength, employing various laser fluences ranging from 2 J/cm 2 to 8 J/cm 2 . The effect of the laser fluence on the structural properties of the deposited Ru films was investigated using surface profilometry, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Ru droplets, some spherical in shape and some flattened into round discs were found on the deposited Ru. The droplets were correlated to ripple formations on the target during the laser-induced ejection from the target. In addition, crystalline Ru with orientations of (100), (101), and (002) was observed in the XRD spectra and their intensities were found to increase with increasing laser fluence and film thickness. Grain sizes ranging from 20 nm to 35 nm were deduced using the Scherrer formula. Optical emission spectroscopy (OES) and energy-dispersive X-ray spectroscopy (EDS) show that the composition of the plume and the deposited Ru film was of high purity. (orig.)

Controlling the electrical and the optical properties of amorphous IGZO films prepared by using pulsed laser deposition

International Nuclear Information System (INIS)

Lee, Minseong; Dho, Joonghoe

2011-01-01

We have investigated the effects of substrate temperature and oxygen pressure on the electrical and the optical properties of amorphous InGaZnO4 (a-IGZO) films grown on glass substrates by using pulsed laser deposition. X-ray diffraction and scanning electron microscopy data suggest that the a-IGZO starts to crystallize around ∼600 .deg. C. The electrical resistivity and the carrier density of the a-IGZO film showed large variations with changes in the substrate temperature or the oxygen pressure. The resistivity of the a-IGZO film was minimized at ∼200 .deg. C and ∼10 mTorr. The energy gap estimated from the optical transmittance showed an increasing tendency with increasing of substrate temperature up to ∼200 .deg. C or with increasing of oxygen pressure up to 100 mTorr, and it was about ∼3.0 eV at 200 .deg. C and 10 mTorr. Remarkably, the optical transmittance for the a-IGZO film showed a clear variation in the violet color region with changing of the substrate temperature and oxygen pressure. Our results suggest that both the substrate temperature and the oxygen pressure can be exploited as key parameters to control the electrical and the optical properties of a-IGZO films.

Pulsed laser deposition of hydroxyapatite thin films

Czech Academy of Sciences Publication Activity Database

Koch, C.F.; Johnson, S.; Kumar, D.; Jelínek, Miroslav; Chrisey, D.B.; Doraiswamy, A.; Jin, C.; Narayan, R.J.; Mihailescu, I. N.

2007-01-01

Roč. 27, - (2007), s. 484-494 ISSN 0928-4931 Institutional research plan: CEZ:AV0Z10100522 Keywords : hydroxyapatite * pulsed laser deposition * bioactive ceramic s Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.486, year: 2007

Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

International Nuclear Information System (INIS)

Dhlamini, M.S.; Terblans, J.J.; Ntwaeaborwa, O.M.; Ngaruiya, J.M.; Hillie, K.T.; Botha, J.R.; Swart, H.C.

2008-01-01

Thin films of lead sulfide (PbS) nanoparticles embedded in an amorphous silica (SiO 2 ) host were grown on Si(1 0 0) substrates at different temperatures by the pulsed laser deposition (PLD) technique. Surface morphology and photoluminescence (PL) properties of samples were analyzed with scanning electron microscopy (SEM) and a 458 nm Ar + laser, respectively. The PL data show a blue-shift from the normal emission at ∼3200 nm in PbS bulk to ∼560-700 nm in nanoparticulate PbS powders and thin films. Furthermore, the PL emission of the films was red-shifted from that of the powders at ∼560 to ∼660 nm. The blue-shifting of the emission wavelengths from 3200 to ∼560-700 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the red-shift between powders and thin-film PbS nanoparticles is speculated to be due to an increase in the defect concentration. The red-shift increased slightly with an increase in deposition temperature, which suggests that there has been a relative growth in particle sizes during the PLD of the films at higher temperatures. Generally, the PL emission of the powders was more intense than that of the films, although the intensity of some of the films was improved marginally by post-deposition annealing at 400 deg. C. This paper compares the PL properties of powder and pulsed laser-deposited thin films of PbS nanoparticles and the effects of deposition temperatures

High performance diamond-like carbon layers obtained by pulsed laser deposition for conductive electrode applications

Science.gov (United States)

Stock, F.; Antoni, F.; Le Normand, F.; Muller, D.; Abdesselam, M.; Boubiche, N.; Komissarov, I.

2017-09-01

For the future, one of the biggest challenge faced to the technologies of flat panel display and various optoelectronic and photovoltaic devices is to find an alternative to the use of transparent conducting oxides like ITO. In this new approach, the objective is to grow high conductive thin-layer graphene (TLG) on the top of diamond-like carbon (DLC) layers presenting high performance. DLC prepared by pulsed laser deposition (PLD) have attracted special interest due to a unique combination of their properties, close to those of monocrystalline diamond, like its transparency, hardness and chemical inertia, very low roughness, hydrogen-free and thus high thermal stability up to 1000 K. In our future work, we plane to explore the synthesis of conductive TLG on top of insulating DLC thin films. The feasibility and obtained performances of the multi-layered structure will be explored in great details in the short future to develop an alternative to ITO with comparable performance (conductivity of transparency). To select the best DLC candidate for this purpose, we focus this work on the physicochemical properties of the DLC thin films deposited by PLD from a pure graphite target at two wavelengths (193 and 248 nm) at various laser fluences. A surface graphenization process, as well as the required efficiency of the complete structure (TLG/DLC) will clearly be related to the DLC properties, especially to the initial sp3/sp2 hybridization ratio. Thus, an exhaustive description of the physicochemical properties of the DLC layers is a fundamental step in the research of comparable performance to ITO.

Deposition of Methylammonium Lead Triiodide by Resonant Infrared Matrix-Assisted Pulsed Laser Evaporation

Science.gov (United States)

Barraza, E. Tomas; Dunlap-Shohl, Wiley A.; Mitzi, David B.; Stiff-Roberts, Adrienne D.

2018-02-01

Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) was used to deposit the metal-halide perovskite (MHP) CH3NH3PbI3 (methylammonium lead triiodide, or MAPbI), creating phase-pure films. Given the moisture sensitivity of these crystalline, multi-component organic-inorganic hybrid materials, deposition of MAPbI by RIR-MAPLE required a departure from the use of water-based emulsions as deposition targets. Different chemistries were explored to create targets that properly dissolved MAPbI components, were stable under vacuum conditions, and enabled resonant laser energy absorption. Secondary phases and solvent contamination in the resulting films were studied through Fourier transform infrared (FTIR) absorbance and x-ray diffraction (XRD) measurements, suggesting that lingering excess methylammonium iodide (MAI) and low-vapor pressure solvents can distort the microstructure, creating crystalline and amorphous non-perovskite phases. Thermal annealing of films deposited by RIR-MAPLE allowed for excess solvent to be evaporated from films without degrading the MAPbI structure. Further, it was demonstrated that RIR-MAPLE does not require excess MAI to create stoichiometric films with optoelectronic properties, crystal structure, and film morphology comparable to films created using more established spin-coating methods for processing MHPs. This work marks the first time a MAPLE-related technique was used to deposit MHPs.

Femtosecond pulsed laser ablation of GaAs

International Nuclear Information System (INIS)

Trelenberg, T.W.; Dinh, L.N.; Saw, C.K.; Stuart, B.C.; Balooch, M.

2004-01-01

The properties of femtosecond-pulsed laser deposited GaAs nanoclusters were investigated. Nanoclusters of GaAs were produced by laser ablating a single crystal GaAs target in vacuum or in a buffer gas using a Ti-sapphire laser with a 150 fs minimum pulse length. For in-vacuum deposition, X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) revealed that the average cluster size was approximately 7 nm for laser pulse lengths between 150 fs and 25 ps. The average cluster size dropped to approximately 1.5 nm at a pulse length of 500 ps. It was also observed that film thickness decreased with increasing laser pulse length. A reflective coating, which accumulated on the laser admission window during ablation, reduced the amount of laser energy reaching the target for subsequent laser shots and developed more rapidly at longer pulse lengths. This observation indicates that non-stoichiometric (metallic) ablatants were produced more readily at longer pulse lengths. The angular distribution of ejected material about the target normal was well fitted to a bi-cosine distribution of cos 47 θ+ cos 4 θ for ablation in vacuum using 150 fs pulses. XPS and AES revealed that the vacuum-deposited films contained excess amorphous Ga or As in addition to the stoichiometric GaAs nanocrystals seen with XRD. However, films containing only the GaAs nanocrystals were produced when ablation was carried out in the presence of a buffer gas with a pressure in excess of 6.67 Pa. At buffer gas pressure on the order of 1 Torr, it was found that the stoichiometry of the ablated target was also preserved. These experiments indicate that both laser pulse length and buffer gas pressure play important roles in the formation of multi-element nanocrystals by laser ablation. The effects of gas pressure on the target's morphology and the size of the GaAs nanocrystals formed will also be discussed

Laser deposition of SmCo thin film and coating on different substrates

International Nuclear Information System (INIS)

Allocca, L; Bonavolonta, C; Valentino, M; Giardini, A; Lopizzo, T; Morone, A; Verrastro, M F; Viggiano, V

2008-01-01

Thin films and coatings of permanent magnetic materials are very important for different electronic and micromechanical applications. This paper deals with the fabrication, using pulsed laser deposition (PLD) technique, of good quality magnetic SmCo thin films on polycarbonate, steel, silicon and amorphous quartz substrates, for low cost electronic applications like radio frequency identification (RFID) antennas and electromechanical devices for fuel feeding control in the automotive. X-ray fluorescence and magnetic scanning measurements using giant magneto-resistive (GMR) sensors have been performed to study the functional magnetic properties of the deposited thin films.

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

Science.gov (United States)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

Influences of ambient gases on the structure and the composition of calcium phosphate films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Kim, Hye-Lee; Kim, Young-Sun; Kim, Dae-Joon; Lee, Won-Jun; Han, Jung-Suk

2006-01-01

Calcium phosphate films were prepared by using a pulsed KrF-laser deposition (PLD) method with a hydroxyapatite target in various ambient gases, such as Ar, O 2 and H 2 O. The influence of the ambient gas on the properties of the deposited films was investigated. The chamber pressure and the substrate temperature were fixed at 0.25 Torr and 600 .deg. C, respectively. Calcium-rich amorphous calcium phosphate films were deposited with a low density in Ar due to the preferential resputtering of phosphorus from the growing film. In an O 2 ambient, the density and the Ca/P ratio of the films were similar to those of the target. However, the deposited film was amorphous calcium phosphate and did not contain OH - groups. Polycrystalline hydroxyapatite films can be deposited in a H 2 O ambient because a sufficient supply of OH - groups from the ambient gas is essential for the growth of a hydroxyapatite film.

Influences of ambient gases on the structure and the composition of calcium phosphate films prepared by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Kim, Hye-Lee; Kim, Young-Sun; Kim, Dae-Joon; Lee, Won-Jun [Sejong University, Seoul (Korea, Republic of); Han, Jung-Suk [Seoul National University, Seoul (Korea, Republic of)

2006-11-15

Calcium phosphate films were prepared by using a pulsed KrF-laser deposition (PLD) method with a hydroxyapatite target in various ambient gases, such as Ar, O{sub 2} and H{sub 2}O. The influence of the ambient gas on the properties of the deposited films was investigated. The chamber pressure and the substrate temperature were fixed at 0.25 Torr and 600 .deg. C, respectively. Calcium-rich amorphous calcium phosphate films were deposited with a low density in Ar due to the preferential resputtering of phosphorus from the growing film. In an O{sub 2} ambient, the density and the Ca/P ratio of the films were similar to those of the target. However, the deposited film was amorphous calcium phosphate and did not contain OH{sup -} groups. Polycrystalline hydroxyapatite films can be deposited in a H{sub 2}O ambient because a sufficient supply of OH{sup -} groups from the ambient gas is essential for the growth of a hydroxyapatite film.

The spatial thickness distribution of metal films produced by large area pulsed laser deposition

DEFF Research Database (Denmark)

Pryds, Nini; Schou, Jørgen; Linderoth, Søren

2007-01-01

Thin films of metals have been deposited in the large-area Pulsed Laser Deposition (PLD) Facility at Riso National Laboratory. Thin films of Ag and Ni were deposited with laser pulses from an excimer laser at 248 nm with a rectangular beam spot at a fluence of 10 J/cm(2) on glass substrates of 127...

Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Melikhova, O.; Čížek, J.; Lukáč, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

2013-01-01

Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO

Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Melikhova, O., E-mail: oksivmel@yahoo.com [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Čížek, J.; Lukáč, F.; Vlček, M. [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Novotný, M.; Bulíř, J.; Lančok, J. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague (Czech Republic); Anwand, W.; Brauer, G. [Institut für Strahlenphysik, Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510 119, D-01314 Dresden (Germany); Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P. [National Centre for Plasma Science and Technology, School of Physical Sciences, Glasnevin, Dublin 9 (Ireland)

2013-12-15

Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO.

X-ray absorption study of silicon carbide thin film deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Monaco, G.; Suman, M.; Garoli, D.; Pelizzo, M.G.; Nicolosi, P.

2011-01-01

Silicon carbide (SiC) is an important material for several applications ranging from electronics to Extreme UltraViolet (EUV) space optics. Crystalline cubic SiC (3C-SiC) has a wide band gap (near 2.4 eV) and it is a promising material to be used in high frequency and high energetic electronic devices. We have deposited, by means of pulsed laser deposition (PLD), different SiC films on sapphire and silicon substrates both at mild (650 o C) and at room temperature. The resulted films have different structures such as: highly oriented polycrystalline, polycrystalline and amorphous which have been studied by means of X-ray absorption spectroscopy (XAS) near the Si L 2,3 edge and the C K edge using PES (photoemission spectroscopy) for the analysis of the valence bands structure and film composition. The samples obtained by PLD have shown different spectra among the grown films, some of them showing typical 3C-SiC absorption structure, but also the presence of some Si-Si and graphitic bonds.

Effects of introduction of argon on structural and transparent conducting properties of ZnO-In2O3 thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Moriga, Toshihiro; Mikawa, Michio; Sakakibara, Yuji; Misaki, Yukinori; Murai, Kei-ichiro; Nakabayashi, Ichiro; Tominaga, Kikuo; Metson, James B.

2005-01-01

Indium-zinc oxide thin films were deposited on a glass substrate from a ZnO and In 2 O 3 mixed target by a pulsed laser deposition technique. The effects on surface texture, structure and transparent conducting properties of the introduction of argon into the chamber during the depositions of amorphous and homologous ZnO-In 2 O 3 thin films were examined. The compositional range where amorphous films formed was widened by the introduction of argon. Resistivity in the region where the amorphous phase appeared increased slightly, with an increase of zinc content, due to the counteractions of decreased Hall mobility and increased carrier concentration. Introduction of argon improved surface roughness of the films and reduced and regulated particle and/or crystallite sizes of the films

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

International Nuclear Information System (INIS)

Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe; Catalano, Massimo; Manera, Maria Grazia; Rella, Roberto; Taurino, Antonietta

2011-01-01

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Science.gov (United States)

Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe; Catalano, Massimo; Grazia Manera, Maria; Rella, Roberto; Taurino, Antonietta

2011-09-01

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Energy Technology Data Exchange (ETDEWEB)

Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe [Physics Department, University of Salento, Via Arnesano, 73100 Lecce (Italy); Catalano, Massimo; Manera, Maria Grazia; Rella, Roberto; Taurino, Antonietta, E-mail: antonietta.taurino@le.imm.cnr.it [Institute for Microelectronics and Microsystems, IMM-CNR, Via Monteroni, 73100 Lecce (Italy)

2011-09-14

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

Large area crystallization of amorphous Si with overlapping high repetition rate laser pulses

KAUST Repository

Ryu, Sang-Gil

2012-09-01

This paper presents a pulsed laser crystallization technique, enabling large area crystallization of amorphous Si to produce grains having well-defined size and orientation. The method is developed by first determining the parameters influencing crystallization induced by single laser pulses of circular cross-sectional profile. In a second step, crystallization by overlapping round spots is examined. The experiments reveal three zones characterized by distinctly different crystallized morphologies following the laser irradiation. One of these zones corresponds to the regime of lateral crystal growth, wherein grains are driven towards the center of the spot by the radial temperature gradient. These findings are then applied to processing via line beam profiles that facilitate large area crystallization upon rapid translation of the specimen. Crystallization of extended areas hinges on the determination of the crystal growth length for a single spot. The pitch between successive pulses is then set on the basis of this information. It is shown that the pulse energy has only a weak effect on the crystal growth length. © 2012 Elsevier B.V.

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Science.gov (United States)

Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

2017-07-01

We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

The Role of Ambient Gas and Pressure on the Structuring of Hard Diamond-Like Carbon Films Synthesized by Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Andrei C. Popescu

2015-06-01

Full Text Available Hard carbon thin films were synthesized on Si (100 and quartz substrates by the Pulsed Laser Deposition (PLD technique in vacuum or methane ambient to study their suitability for applications requiring high mechanical resistance. The deposited films’ surface morphology was investigated by scanning electron microscopy, crystalline status by X-ray diffraction, packing and density by X-ray reflectivity, chemical bonding by Raman and X-ray photoelectron spectroscopy, adherence by “pull-out” measurements and mechanical properties by nanoindentation tests. Films synthesized in vacuum were a-C DLC type, while films synthesized in methane were categorized as a-C:H. The majority of PLD films consisted of two layers: one low density layer towards the surface and a higher density layer in contact with the substrate. The deposition gas pressure played a crucial role on films thickness, component layers thickness ratio, structure and mechanical properties. The films were smooth, amorphous and composed of a mixture of sp3-sp2 carbon, with sp3 content ranging between 50% and 90%. The thickness and density of the two constituent layers of a film directly determined its mechanical properties.

Oxygen reduction activity of N-doped carbon-based films prepared by pulsed laser deposition

Science.gov (United States)

Hakoda, Teruyuki; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yamaki, Tetsuya; Kobayashi, Tomohiro; Yoshikawa, Masahito

2010-12-01

Carbon-based films with nitrogen species on their surface were prepared on a glassy carbon (GC) substrate for application as a non-platinum cathode catalyst for polymer electrolyte fuel cells. Cobalt and carbon were deposited in the presence of N 2 gas using a pulsed laser deposition method and then the metal Co was removed by HCl-washing treatment. Oxygen reduction reaction (ORR) activity was electrochemically determined using a rotating disk electrode system in which the film samples on the GC substrate were replaceable. The ORR activity increased with the temperature of the GC substrate during deposition. A carbon-based film prepared at 600 °C in the presence of N 2 at 66.7 Pa showed the highest ORR activity among the tested samples (0.66 V vs. NHE). This film was composed of amorphous carbons doped with pyridine type nitrogen atoms on its surface.

Pulsed laser deposition and characterization of cellulase thin films

Science.gov (United States)

Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

2013-08-01

Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

Pulsed laser deposition to synthesize the bridge structure of artificial nacre: Comparison of nano- and femtosecond lasers

Science.gov (United States)

Melaibari, Ammar A.; Molian, Pal

2012-11-01

Nature offers inspiration to new adaptive technologies that allow us to build amazing shapes and structures such as nacre using synthetic materials. Consequently, we have designed a pulsed laser ablation manufacturing process involving thin film deposition and micro-machining to create hard/soft layered "brick-bridge-mortar" nacre of AlMgB14 (hard phase) with Ti (soft phase). In this paper, we report pulsed laser deposition (PLD) to mimic brick and bridge structures of natural nacre in AlMgB14. Particulate formation inherent in PLD is exploited to develop the bridge structure. Mechanical behavior analysis of the AlMgB14/Ti system revealed that the brick is to be 250 nm thick, 9 μm lateral dimensions while the bridge (particle) is to have a diameter of 500 nm for a performance equivalent to natural nacre. Both nanosecond (ns) and femtosecond (fs) pulsed lasers were employed for PLD in an iterative approach that involves varying pulse energy, pulse repetition rate, and target-to-substrate distance to achieve the desired brick and bridge characteristics. Scanning electron microscopy, x-ray photoelectron spectroscopy, and optical profilometer were used to evaluate the film thickness, particle size and density, stoichiometry, and surface roughness of thin films. Results indicated that both ns-pulsed and fs-pulsed lasers produce the desired nacre features. However, each laser may be chosen for different reasons: fs-pulsed laser is preferred for much shorter deposition time, better stoichiometry, uniform-sized particles, and uniform film thickness, while ns-pulsed laser is favored for industrial acceptance, reliability, ease of handling, and low cost.

Characterization of hydroxyapatite coating by pulse laser deposition technique on stainless steel 316 L by varying laser energy

International Nuclear Information System (INIS)

Khandelwal, Himanshu; Singh, Gurbhinder; Agrawal, Khelendra; Prakash, Satya; Agarwal, R.D.

2013-01-01

Highlights: ► Hydroxyapatite coating was successfully deposited on stainless steel substrate by pulse laser deposition at different energy levels (i.e. 300 mJ and 500 mJ, respectively). ► Variation in laser energy affects the surface characteristic of hydroxyapatite coating (particle size, surface roughness, uniformity, Ca/P ratio). ► Laser energy between 300 mJ and 500 mJ is the optimal choice for obtaining ideal Ca/P ratio. - Abstract: Hydroxyapatite is an attractive biomaterial mainly used in bone and tooth implants because it closely resembles human tooth and bone mineral and has proven to be biologically compatible with these tissues. In spite of this advantage of hydroxyapatite it has also certain limitation like inferior mechanical properties which do not make it suitable for long term load bearing applications; hence a lot of research is going on in the development of hydroxyapatite coating over various metallic implants. These metallic implants have good biocompatibility and mechanical properties. The aim of the present work is to deposit hydroxyapatite coating over stainless steel grade 316 L by pulse laser deposition technique by varying laser energy. To know the effect of this variation, the coatings were than characterized in detail by X-ray diffraction, finite emission-scanning electron microscope, atomic force microscope and energy dispersive X-ray spectroscopy.

UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

International Nuclear Information System (INIS)

Toftmann, B.; Papantonakis, M.R.; Auyeung, R.C.Y.; Kim, W.; O'Malley, S.M.; Bubb, D.M.; Horwitz, J.S.; Schou, J.; Johansen, P.M.; Haglund, R.F.

2004-01-01

A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence

UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

DEFF Research Database (Denmark)

Christensen, Bo Toftmann; Papantonalis, M.R.; Auyeung, R.C.Y.

2004-01-01

-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates......A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly [2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR...... were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence. (C) 2003...

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Directory of Open Access Journals (Sweden)

Chia-Man Chou

2017-07-01

Full Text Available We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD incorporated with radio-frequency (r.f.-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr. High oxygen vapor pressure (150 mTorr and low r.f. power (10 W are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Glavin, Nicholas R. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Jespersen, Michael L. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Check, Michael H. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Hu, Jianjun [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Hilton, Al M. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Wyle Laboratories, Dayton, OH 45433 (United States); Fisher, Timothy S. [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, Andrey A. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States)

2014-12-01

Pulsed laser deposition (PLD) has been investigated as a technique for synthesis of ultra-thin, few-layer hexagonal boron nitride (h-BN) thin films on crystalline highly ordered pyrolytic graphite (HOPG) and sapphire (0001) substrates. The plasma-based processing technique allows for increased excitations of deposited atoms due to background nitrogen gas collisional ionizations and extended resonance time of the energetic species presence at the condensation surface. These processes permit growth of thin, polycrystalline h-BN at 700 °C, a much lower temperature than that required by traditional growth methods. Analysis of the as-deposited films reveals epitaxial-like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline h-BN film, and amorphous BN (a-BN) on the sapphire substrates, both with thicknesses of 1.5–2 nm. Stoichiometric films with boron-to-nitrogen ratios of unity were achieved by adjusting the background pressure within the deposition chamber and distance between the target and substrate. The reduction in deposition temperature and formation of stoichiometric, large-area h-BN films by PLD provide a process that is easily scaled-up for two-dimensional dielectric material synthesis and also present a possibility to produce very thin and uniform a-BN. - Highlights: • PLD was used to synthesize boron nitride thin films on HOPG and sapphire substrates. • Lattice matched substrate allowed for formation of polycrystalline h-BN. • Nitrogen gas pressure directly controlled film chemistry and structure. • Technique allows for ultrathin, uniform films at reduced processing temperatures.

Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N.; Martinez-Landeros, V.; Mejia, I.; Aguirre-Tostado, F.S.; Nascimento, C.D.; Azevedo, G. de M; Krug, C.; Quevedo-Lopez, M.A.

2014-01-01

The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10 −1 to 10 4 Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10 19 to 10 13 cm −3 and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm 2 /V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10 19 to 10 13 cm −3 . • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied

Pulsed laser deposition of Tl-Ca-Ba-Cu-O films

International Nuclear Information System (INIS)

Ianno, N.J.; Liou, S.H.; Woollam, J.A.; Thompson, D.; Johs, B.

1990-01-01

Pulsed laser deposition is a technique commonly used to deposit high quality thin films of high temperature superconductors. This paper discusses the results obtained when this technique is applied to the deposition of Tl-Ca-Ba-Cu-O thin films using a frequency doubled Nd:YAG laser operating at 532 nm and an excimer laser operating at 248 nm. Films with onset temperatures of 125 K and zero resistance temperatures of 110 K deposited on (100) oriented MgO from a composite Tl2Ca2Ba2Cu3Ox target were obtained at both wavelengths upon appropriate post deposition annealing. Films deposited at 532 nm exhibit a rough surface, while those deposited at 248 nm are smooth and homogeneous. Upon annealing, films deposited at both wavelengths are single phase Tl2Ca2Ba2Cu3Ox. 12 refs

RHEED study of titanium dioxide with pulsed laser deposition

DEFF Research Database (Denmark)

Rasmussen, Inge Lise; Pryds, Nini; Schou, Jørgen

2009-01-01

Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the growth of thin films of titanium dioxide (TiO2) on (1 0 0) magnesium oxide (MgO) substrates by pulsed laser deposition (PLD). The deposition is performed with a synthetic rutile TiO2 target...

Stoichiometry and characterization of aluminum oxynitride thin films grown by ion-beam-assisted pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Zabinski, J.S. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States); Hu, J.J. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)], E-mail: Jianjun.Hu@WPAFB.AF.MIL; Bultman, J.E. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States); Pierce, N.A. [Propulsion Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States); Voevodin, A.A. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2008-07-31

Oxides are inherently stable in air at elevated temperatures and may serve as wear resistant matrices for solid lubricants. Aluminum oxide is a particularly good candidate for a matrix because it has good diffusion barrier properties and modest hardness. Most thin film deposition techniques that are used to grow alumina require high temperatures to impart crystallinity. Crystalline films are about twice as hard as amorphous ones. Unfortunately, the mechanical properties of most engineering steels are degraded at temperatures above 250-350 deg. C. This work is focused on using energetic reactive ion bombardment during simultaneous pulsed laser deposition to enhance film crystallization at low temperatures. Alumina films were grown at several background gas pressures and temperatures, with and without Ar ion bombardment. The films were nearly stoichiometric except for depositions in vacuum. Using nitrogen ion bombardment, nitrogen was incorporated into the films and formed the Al-O-N matrix. Nitrogen concentration could be controlled through selection of gas pressure and ion energy. Crystalline Al-O-N films were grown at 330 deg. C with a negative bias voltage to the substrate, and showed improved hardness in comparison to amorphous films.

The properties of Ge quantum rings deposited by pulsed laser deposition.

Science.gov (United States)

Ma, Xiying

2010-07-01

SiGe ring-shape nanostructures have attracted much research interest because of the interesting morphology, mechanical, and electromagnetic properties. In this paper, we present the planar Ge nanorings with well-defined sharp edges self-assembled on Si (100) matrix prepared with pulsed laser deposition (PLD) in the present of Ar gas. The transforming mechanism of the droplets is discussed, which a dynamic deformation model has been developed to simulate the self-transforming process of the droplets. The rings were found to be formed in two steps: from droplets to cones and from cones to rings via an elastic self-deforming process, which were likely to be driven by the lateral strain of Ge/Si layers and the surface tension.

Enhanced dielectric properties of ZrO2 thin films prepared in nitrogen ambient by pulsed laser deposition

International Nuclear Information System (INIS)

Zhu, J; Li, T L; Pan, B; Zhou, L; Liu, Z G

2003-01-01

ZrO 2 thin films were fabricated in O 2 ambient and in N 2 ambient by pulsed laser deposition (PLD), respectively. X-ray diffraction revealed that films prepared at 400 deg. C remained amorphous. The dielectric properties of amorphous ZrO 2 films were investigated by measuring the capacitance-frequency characteristics of Pt/ZrO 2 /Pt capacitor structures. The dielectric constant of the films deposited in N 2 ambient was larger than that of the films deposited in O 2 ambient. The dielectric loss was lower for films prepared in N 2 ambient. Atom force microscopy investigation indicated that films deposited in N 2 ambient had smoother surface than films deposited in O 2 ambient. Capacitance-voltage and current-voltage characteristics were studied. The equivalent oxide thickness (EOT) of films with 6.6 nm physical thickness deposited in N 2 ambient is lower than that of films deposited in O 2 ambient. An EOT of 1.38 nm for the film deposited in N 2 ambient was obtained, while the leakage current density was 94.6 mA cm -2 . Therefore, ZrO 2 thins deposited in N 2 ambient have enhanced dielectric properties due to the incorporation of nitrogen which leads to the formation of Zr-doped nitride interfacial layer, and is suggested to be a potential material for alternative high-k (high dielectric constant) gate dielectric applications

Production of porous PTFE-Ag composite thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Kecskeméti, Gabriella; Hopp, Béla; Smausz, Tomi; Tóth, Zsolt; Szabó, Gábor

2012-01-01

The suitability of pulsed laser deposition technique for preparation of polytetrafluoroethylene (PTFE) and silver (Ag) composite thin films was demonstrated. Disk-shaped targets combined from silver and Teflon with various percentages were ablated with pulses of an ArF excimer laser. The chemical composition of the deposited layers was estimated based on deposition rates determined for the pure PTFE and Ag films. EDX and SEM analyses using secondary electron and backscattered electron images proved that the morphology of the layers is determined by the PTFE which is the main constituent and it is transferred mostly in form of grains and clusters forming a sponge-like structure with high specific surface. The Ag content is distributed over the surface of the PTFE structure. Contact angle measurements showed that with increasing the amount of Ag in the deposited layers the surface significantly enhanced the wetting properties. Conductivity experiments demonstrated that when the average silver content of the layers was increased from 0.16 to 3.28 wt% the resistance of our PTFE-Ag composite films decreased with about three orders of magnitudes (from ∼10 MΩ to ∼10 kΩ). The properties of these films suggest as being a good candidate for future electrochemical sensor applications.

Pulsed-laser deposited ZnO for device applications

NARCIS (Netherlands)

King, S.L.; Gardeniers, Johannes G.E.; Boyd, I.W.

1996-01-01

The study investigates the growth by pulsed-laser deposition (PLD) of ZnO thin films for the eventual incorporation into piezo-electric actuators and other sensors being developed at the University of Twente. All films are purely c-axis oriented, and results are presented which suggest the

Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

2014-01-01

The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

Pulsed 1064 nm Nd-YAG Laser Deposition of Titanium on Silicon in a Nitrogen Environment

Directory of Open Access Journals (Sweden)

Wilson Garcia

1999-12-01

Full Text Available Pulsed laser deposition (PLD technique was demonstrated for the deposition of titanium nitride (TiN thin films on Si (100 substrates. A 1064 nm pulsed Nd-YAG laser is focused on a titanium (99.5% target in a nitrogen environment to generate the atomic flux needed for the film deposition. Spectroscopic analysis of the plasma emission indicates the presence of atomic titanium and nitrogen, which are the precursors of TiN. Images of the films grown at different laser pulse energies show an increase in the number and size of deposited droplets and clusters with increasing laser pulse energy. A decrease in cluster and droplet size is also observed, with an increase in substrate temperature. EDS data show an increase in the titanium peak relative to the silicon as the ambient nitrogen pressure is decreased. An increase in deposition time was found to result in large clusters and irregularly shaped structures on the substrate. Post-deposition annealing of the samples enhanced the crystallinity of the film.

Parametric study of self-forming ZnO Nanowall network with honeycomb structure by Pulsed Laser Deposition

KAUST Repository

El Zein, B.; Boulfrad, Samir; Jabbour, Ghassan E.; Doghè che, Elhadj Hadj

2014-01-01

The successful synthesis of catalyst free zinc oxide (ZnO) Nanowall networks with honeycomb like structure by Pulsed Laser Deposition (PLD) is demonstrated in this paper. The synthesis was conducted directly on Silicon (Si) (1 0 0) and Glass

Electron microscopy studies of octa-calcium phosphate thin films obtained by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Iliescu, Monica; Nelea, V.; Werckmann, J.; Mihailescu, I.N.; Socol, G.; Bigi, Adriana; Bracci, Barbara

2004-04-01

Octa-calcium phosphate (OCP), Ca{sub 8}(HPO{sub 4}){sub 2}(PO{sub 4}){sub 4}{center_dot}5H{sub 2}O, is present as transient compound in the precipitation of hydroxyapatite (HA) and biological apatites. Because of these characteristics, OCP plays a crucial role in the in-vivo mineralization of human bones and teeth. The use of OCP in developing new generations of bone prosthesis stands therefore for an innovative challenge. This paper reports studies of OCP structures grown in the form of thin films by pulsed laser deposition (PLD) with emphasis on electron microscopy investigations. OCP films were grown on etched Ti substrates, using an UV KrF* excimer laser source ({lambda}=248 nm, {tau}{>=}20 ns). Films were deposited in low-pressure (50 Pa) water vapors environment on substrates heated at 20-180 deg. C. We performed annealing treatments in water vapors and ambient pressure at substrate temperatures identical to those used during deposition. Comprehensive structural and morphological investigations were carried out with different based-electron microscopy procedures. Grazing incidence X-ray diffraction (GIXRD) and white light confocal microscopy were also applied to characterize the films. Ca/P atomic ratio of films was determined by energy dispersive X-ray spectrometry, electron energy loss spectroscopy and X-ray photoelectron spectroscopy. The obtained films generally exhibit an amorphous structure, as evidenced by GIXRD. Nevertheless, cross-section transmission electron microscopy investigations provide supplementary information about the film characteristics and material crystallization in small domains. OCP nanoparticles coalesce and grow perpendicular to the substrate in a tree-like structure, comparable to a coral reef.

BN-based nano-composites obtained by pulsed laser deposition

International Nuclear Information System (INIS)

Major, B.; Kosydar, R.; Major, L; Mroz, W.; Burdynska, S.; Jelinek, M.; Kot, M.; Kustosz, R.

2006-01-01

Boron nitride thin layers were produced by means of the pulsed laser deposition technique from hexagonal boron nitride target. Two types of laser i.e. Nd: YAG with Q-switch as well as KrF coupled with RF generator were used. Influence of deposition parameters on surface morphology, phase composition as well as mechanical properties is discussed. Results obtained using Fourier Transformed Infrared Spectroscopy, Transmission and Scanning Electron Microscopy, Atomic Force Microscopy are presented. Micromechanical properties measured during micro indentation, scratch and wear tests are also shown. (authors)

Normal and grazing incidence pulsed laser deposition of nanostructured MoSx hydrogen evolution catalysts from a MoS2 target

Science.gov (United States)

Fominski, V. Yu.; Romanov, R. I.; Fominski, D. V.; Dzhumaev, P. S.; Troyan, I. A.

2018-06-01

Pulsed laser ablation of a MoS2 target causes enhanced splashing of the material. So, for MoSx films obtained by pulsed laser deposition (PLD) in the conventional normal incidence (NI) configuration, their typical morphology is characterized by an underlying granular structure with an overlayer of widely dispersed spherical Mo and MoSx particles possessing micro-, sub-micro- and nanometer sizes. We investigated the possibility of using high surface roughness, which occurs due to particle deposition, as a support with a large exposed surface area for thin MoSx catalytic layers for the hydrogen evolution reaction (HER). For comparison, the HER performance of MoSx layers formed by grazing incidence (GI) PLD was studied. During GI-PLD, a substrate was placed along the direction of laser plume transport and few large particles loaded the substrate. The local structure and composition of thin MoSx layers formed by the deposition of the vapor component of the laser plume were varied by changing the pressure of the buffer gas (argon, Ar). In the case of NI-PLD, an increase in Ar pressure caused the formation of quasi-amorphous MoSx (x ≥ 2) films that possessed highly active catalytic sites on the edges of the layered MoS2 nanophase. At the same time, a decrease in the deposition rate of the MoSx film appeared due to the scattering of the vapor flux by Ar molecules during flux transport from the target to the substrate. This effect prevented uniform deposition of the MoSx catalytic film on the surface of most particles, whose deposition rate was independent of Ar pressure. The scattered vapor flux containing Mo and S atoms was a dominant source for MoSx film growth during GI-PLD. The thickness and composition distribution of the MoSx film on the substrate depended on both the pressure of the buffer gas and the distance from the target. For 1.0-2.5 cm from the target, the deposition rate was quite sufficient to form S-enriched quasi-amorphous MoSx (2.5 < x < 6) catalytic

Irradiation of amorphous Ta{sub 42}Si{sub 13}N{sub 45} film with a femtosecond laser pulse

Energy Technology Data Exchange (ETDEWEB)

Romano, V. [University of Bern, Institute of Applied Physics, Bern (Switzerland); Bern University of Applied Sciences, Bern (Switzerland); Meier, M. [University of Bern, Institute of Applied Physics, Bern (Switzerland); Theodore, N.D. [Freescale Semiconductor Inc., Tempe, AZ (United States); Marble, D.K. [Tarleton State University, Stephenville, TX (United States); Nicolet, M.A. [California Institute of Technology, Pasadena, CA (United States)

2011-07-15

Films of 260 nm thickness, with atomic composition Ta{sub 42}Si{sub 13}N{sub 45}, on 4'' silicon wafers, have been irradiated in air with single laser pulses of 200 femtoseconds duration and 800 nm wave length. As sputter-deposited, the films are structurally amorphous. A laterally truncated Gaussian beam with a near-uniform fluence of {proportional_to}0.6 J/cm{sup 2} incident normally on such a film ablates 23 nm of the film. Cross-sectional transmission electron micrographs show that the surface of the remaining film is smooth and flat on a long-range scale, but contains densely distributed sharp nanoprotrusions that sometimes surpass the height of the original surface. Dark field micrographs of the remaining material show no nanograins. Neither does glancing angle X-ray diffraction with a beam illuminating many diffraction spots. By all evidence, the remaining film remains amorphous after the pulsed femtosecond irradiation. The same single pulse, but with an enhanced and slightly peaked fluence profile, creates a spot with flat peripheral terraces whose lateral extents shrink with depth, as scanning electron and atomic force micrographs revealed. Comparison of the various figures suggests that the sharp nanoprotrusions result from an ejection of material by brittle fraction and spallation, not from ablation by direct beam-solid interaction. Conditions under which spallation should dominate over ablation are discussed. (orig.)

Ellipsometric study of nanostructured carbon films deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Bereznai, M.; Budai, J.; Hanyecz, I.; Kopniczky, J.; Veres, M.; Koos, M.; Toth, Z.

2011-01-01

When depositing carbon films by plasma processes the resulting structure and bonding nature strongly depends on the plasma energy and background gas pressure. To produce different energy plasma, glassy carbon targets were ablated by laser pulses of different excimer lasers: KrF (248 nm) and ArF (193 nm). To modify plume characteristics argon atmosphere was applied. The laser plume was directed onto Si substrates, where the films were grown. To evaluate ellipsometric measurements first a combination of the Tauc-Lorentz oscillator and the Sellmeier formula (TL/S) was applied. Effective Medium Approximation models were also used to investigate film properties. Applying argon pressures above 10 Pa the deposits became nanostructured as indicated by high resolution scanning electron microscopy. Above ∼ 100 and ∼ 20 Pa films could not be deposited by KrF and ArF laser, respectively. Our ellipsometric investigations showed, that with increasing pressure the maximal refractive index of both series decreased, while the optical band gap starts with a decrease, but shows a non monotonous course. Correlation between the size of the nanostructures, bonding structure, which was followed by Raman spectroscopy and optical properties were also investigated.

Preparation and characterization of Ge2Sb2Te5 phase change films on elastic substrates by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Lu, Hongbing; Thelander, Erik; Benke, Julia; Rauschenbach, Bernd [Leibniz Institute of Surface Modification, 04318 Leipzig (Germany)

2012-07-01

Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) thin films have attracted a great deal of interest as an active layer for data storage media due to its high switching rate and extremely good reversibility. Here we demonstrate the preparation of high-quality GST films on elastic polyimide substrates by pulsed laser deposition (PLD). The composition and chemical state of the films were investigated by energy dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS), respectively. The effect of annealing temperature on the crystalline nature of the films was also studied. As-deposited films were found to be amorphous. Crystalline phases with face-centered cubic and hexagonal structures appeared at 180 and 300 degrees, respectively. Importantly, no phase separation could be seen in the annealed films. Furthermore, reflectivity measurements were performed to characterize the as-deposited and annealed films, showing a high reflectivity contrast (up to 23%) between full crystalline and amorphous films. Our results indicate that PLD deposited GST film on polyimide substrate is a promising candidate for use in future flexible memory devices.

Numerical study on increasing mass flow ratio by energy deposition of high frequency pulsed laser

International Nuclear Information System (INIS)

Wang Diankai; Hong Yanji; Li Qian

2013-01-01

The mass flow ratio (MFR) of air breathing ramjet inlet would be decreased, when the Mach number is lower than the designed value. High frequency pulsed laser energy was deposited upstream of the cowl lip to reflect the stream so as to increase the MFR. When the Mach number of the flow was 5.0, and the static pressure and temperature of the flow were 2 551.6 Pa and 116.7 K, respectively, two-dimensional non-stationary compressible RANS equations were solved with upwind format to study the mechanisms of increasing MFR by high frequency pulsed laser energy deposition. The laser deposition frequency was 100 kHz and the average power was 500 W. The crossing point of the first forebody oblique shock and extension line of cowl lip was selected as the expected point. Then the deposition position was optimized by searching near the expected point. The results indicate that with the optimization of laser energy deposition position, the MFR would be increased from 63% to 97%. The potential value of increasing MFR by high frequency pulsed laser energy deposition was proved. The method for selection of the energy deposition position was also presented. (authors)

Applications of interface controlled pulsed-laser deposited polymer films in field-effect transistors

Science.gov (United States)

Adil, Danish; Ukah, Ndubuisi; Guha, Suchi; Gupta, Ram; Ghosh, Kartik

2010-03-01

Matrix assisted pulsed laser evaporation, a derivative of pulsed laser deposition (PLD), is an alternative method of depositing polymer and biomaterial films that allows homogeneous film coverage of high molecular weight organic materials for layer-by-layer growth without any laser induced damage. Polyfluorene (PF)-based conjugated polymers have attracted considerable attention in organic field-effect transistors (FETs). A co-polymer of PF (PFB) was deposited as a thin film using matrix assisted PLD employing a KrF excimer laser. Electrical characteristics of FETs fabricated using these PLD grown films were compared to those of FETs using spin-coated films. We show that threshold voltages, on/off ratios, and charge carrier motilities are significantly improved in PLD grown films. This is attributed to an improved dielectric-polymer interface.

Exploring the deposition of oxides on silicon for photovoltaic cells by pulsed laser deposition

NARCIS (Netherlands)

Doeswijk, L.M.; de Moor, Hugo H.C.; Rogalla, Horst; Blank, David H.A.

2002-01-01

Since most commercially available solar cells are still made from silicon, we are exploring the introduction of passivating qualities in oxides, with the potential to serve as an antireflection coating. Pulsed laser deposition (PLD) was used to deposit TiO2 and SrTiO3 coatings on silicon substrates.

Channel layer thickness dependence of In-Ti-Zn-O thin-film transistors fabricated using pulsed laser deposition

International Nuclear Information System (INIS)

Zhang, Q.; Shan, F. K.; Liu, G. X.; Liu, A.; Lee, W. J.; Shin, B. C.

2014-01-01

Amorphous indium-titanium-zinc-oxide (ITZO) thin-film transistors (TFTs) with various channel thicknesses were fabricated at room temperature by using pulsed laser deposition. The channel layer thickness (CLT) dependence of the TFTs was investigated. All the ITZO thin films were amorphous, and the surface roughnesses decreased slightly first and then increased with increasing CLT. With increasing CLT from 35 to 140 nm, the on/off current ratio and the field-effect mobility increased, and the subthreshold swing decreased. The TFT with a CLT of 210 nm exhibited the worst performance, while the ITZO TFT with a CLT of 140 nm exhibited the best performance with a subthreshold voltage of 2.86 V, a mobility of 53.9 cm 2 V -1 s -1 , a subthreshold swing of 0.29 V/decade and an on/off current ratio of 10 9 .

Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation

International Nuclear Information System (INIS)

Rebollo P, B.

2001-01-01

The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp 2 and sp 3 bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

Surface modification of biomaterials by pulsed laser ablation deposition and plasma/gamma polymerization

Science.gov (United States)

Rau, Kaustubh R.

Surface modification of stainless-steel was carried out by two different methods: pulsed laser ablation deposition (PLAD) and a combined plasma/gamma process. A potential application was the surface modification of endovascular stents, to enhance biocompatibility. The pulsed laser ablation deposition process, had not been previously reported for modifying stents and represented a unique and potentially important method for surface modification of biomaterials. Polydimethylsiloxane (PDMS) elatomer was studied using the PLAD technique. Cross- linked PDMS was deemed important because of its general use for biomedical implants and devices as well as in other fields. Furthermore, PDMS deposition using PLAD had not been previously studied and any information gained on its ablation characteristics could be important scientifically and technologically. The studies reported here showed that the deposited silicone film properties had a dependence on the laser energy density incident on the target. Smooth, hydrophobic, silicone-like films were deposited at low energy densities (100-150 mJ/cm2). At high energy densities (>200 mJ/cm2), the films had an higher oxygen content than PDMS, were hydrophilic and tended to show a more particulate morphology. It was also determined that (1)the deposited films were stable and extremely adherent to the substrate, (2)silicone deposition exhibited an `incubation effect' which led to the film properties changing with laser pulse number and (3)films deposited under high vacuum were similar to films deposited at low vacuum levels. The mechanical properties of the PLAD films were determined by nanomechanical measurements which are based on the Atomic Force Microscope (AFM). From these measurements, it was possible to determine the modulus of the films and also study their scratch resistance. Such measurement techniques represent a significant advance over current state-of-the-art thin film characterization methods. An empirical model for

Study of temperature dependence and angular distribution of poly(9,9-dioctylfluorene) polymer films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

International Nuclear Information System (INIS)

Caricato, A.P.; Anni, M.; Manera, M.G.; Martino, M.; Rella, R.; Romano, F.; Tunno, T.; Valerini, D.

2009-01-01

Poly(9,9-dioctylfluorene) (PFO) polymer films were deposited by matrix-assisted pulsed laser evaporation (MAPLE) technique. The polymer was diluted (0.5 wt%) in tetrahydrofuran and, once cooled to liquid nitrogen temperature, it was irradiated with a KrF excimer laser. 10,000 laser pulses were used to deposit PFO films on Si substrates at different temperatures (-16, 30, 50 and 70 deg. C). One PFO film was deposited with 16,000 laser pulses at a substrate temperature of 50 deg. C. The morphology, optical and structural properties of the films were investigated by SEM, AFM, PL and FTIR spectroscopy. SEM inspection showed different characteristic features on the film surface, like deflated balloons, droplets and entangled polymer filaments. The roughness of the films was, at least partially, controlled by substrate heating, which however had the effect to reduce the deposition rate. The increase of the laser pulse number modified the target composition and increased the surface roughness. The angular distribution of the material ejected from the target confirmed the forward ejection of the target material. PFO films presented negligible modification of the chemical structure respect to the bulk material.

Picosecond and subpicosecond pulsed laser deposition of Pb thin films

Directory of Open Access Journals (Sweden)

F. Gontad

2013-09-01

Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.

Sub-micron magnetic patterns and local variations of adhesion force induced in non-ferromagnetic amorphous steel by femtosecond pulsed laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Zhang, Huiyan; Feng, Yuping [Departament de Física, Universitat Autònoma de Barcelona, Bellaterra, E08193 (Spain); Nieto, Daniel [Microoptics and GRIN Optics Group, Applied Physics Department, University of Santiago de Compostela, E15782 Santiago de Compostela (Spain); García-Lecina, Eva [Unidad de Superficies Metálicas, IK4-CIDETEC, E20009 Donostia-San Sebastián Gipuzkoa (Spain); Mcdaniel, Clare [National Centre for Laser Applications, School of Physics, National University of Ireland, Galway (Ireland); Díaz-Marcos, Jordi [Unitat de Tècniques Nanomètriques, Centres Científics i Tecnològics, Universitat de Barcelona, E08028 Barcelona (Spain); Flores-Arias, María Teresa [Microoptics and GRIN Optics Group, Applied Physics Department, University of Santiago de Compostela, E15782 Santiago de Compostela (Spain); O’Connor, Gerard M. [National Centre for Laser Applications, School of Physics, National University of Ireland, Galway (Ireland); Baró, Maria Dolors [Departament de Física, Universitat Autònoma de Barcelona, Bellaterra, E08193 (Spain); Pellicer, Eva, E-mail: eva.pellicer@uab.cat [Departament de Física, Universitat Autònoma de Barcelona, Bellaterra, E08193 (Spain); and others

2016-05-15

Highlights: • Formation of ripples after femtosecond pulsed laser irradiation (FSPLI) of metallic glass was studied. • Magnetic patterning at the surface of non-ferromagnetic amorphous steel was induced by FSPLI. • The origin of the generated ferromagnetism is the laser-induced devitrification. - Abstract: Periodic ripple and nanoripple patterns are formed at the surface of amorphous steel after femtosecond pulsed laser irradiation (FSPLI). Formation of such ripples is accompanied with the emergence of a surface ferromagnetic behavior which is not initially present in the non-irradiated amorphous steel. The occurrence of ferromagnetic properties is associated with the laser-induced devitrification of the glassy structure to form ferromagnetic (α-Fe and Fe{sub 3}C) and ferrimagnetic [(Fe,Mn){sub 3}O{sub 4} and Fe{sub 2}CrO{sub 4}] phases located in the ripples. The generation of magnetic structures by FSPLI turns out to be one of the fastest ways to induce magnetic patterning without the need of any shadow mask. Furthermore, local variations of the adhesion force, wettability and nanomechanical properties are also observed and compared to those of the as-cast amorphous alloy. These effects are of interest for applications (e.g., biological, magnetic recording, etc.) where both ferromagnetism and tribological/adhesion properties act synergistically to optimize material performance.

Preparation of SiC and Ag/SiC coatings on TRISO surrogate particles by Pulsed Laser Deposition

International Nuclear Information System (INIS)

Lustfeld, Martin; Reinecke, Anne-Maria; Lippman, Wolfgang; Hurtado, Antonio; Ruiz-Moreno, Ana

2014-01-01

Recently published research results suggest significant advantages of using nanocrystalline instead of coarse grained SiC for nuclear applications. In this work it was attempted to prepare nanocrystalline SiC coatings on TRISO surrogate kernels using the pulsed laser deposition (PLD) process. As a plasma-based physical vapor deposition process, PLD allows the synthesis of dense and stoichiometric coatings in the amorphous or nanocrystalline phase. Two different types of TRISO surrogate kernels were used with outer diameters of 500 pm and 800 μm, respectively: plain Al_2O_3 kernels and ZrO_2 kernels coated with TRISO-like buffer and pyrolytic carbon (PyC) layers. In a second step, the PLD process was used for the preparation of multilayer coatings consisting of a Ag layer buried with a SiC layer. The samples were analyzed regarding their morphology, microstructure, crystalline phase and chemical composition using scanning electron microscopy (SEM), laser scanning microscopy (LSM), x-ray diffraction (XRD) and energy- dispersive x-ray spectroscopy (EDX). The samples will be used in future work for out-of-pile investigations of both thermal stability and Ag retention capability of nanocrystalline SiC layers. X-ray diflraction measurements did not confirm nano crystallinity of the SiC coatings, but rather indicated that the coatings were mainly amorphous possibly with a little fraction of the nanocrystalline phase. Further analyses showed that some of the SiC coatings had an adequate stoichiometric composition and that Ag/SiC multilayer coatings were successfully produced by PLD. Coatings on TRISO- like buffer and PyC layers exhibited good adhesion to the substrate while coatings on Al_2O_3 kernels were susceptible to delamination. The results suggest that PLD is generally suitable for SiC coating of TRISO particles. However, further optimization of the process parameters such as the coating temperature is needed to obtain fine- grained non-columnar SiC layers that are

Direct Patterning of Oxides by Pulsed Laser Stencil Deposition

NARCIS (Netherlands)

te Riele, P.M.

2008-01-01

This thesis describes a detailed study of the application of stencil technology in the patterning of epitaxial oxide thin films by pulsed laser deposition (PLD). Stencil patterning has been applied in thin film sub-micron patterning of metals successfully for decades since it has several advantages

Structural transformations in MoOx thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Camacho-Lopez, M.A.; Haro-Poniatowski, E.; Escobar-Alarcon, L.

2004-01-01

In this work, laser-induced crystallization in MoO x thin films (1.8≤x≤2.1) is reported. This transformation involves a MoO x oxidation and subsequently a crystallization process from amorphous MoO 3 to crystalline αMoO 3 . For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoO x to the thermodynamically stable αMoO 3 crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoO x to a mixture of αMoO 3 and the thermodynamically unstable βMoO 3 crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments. (orig.)

Particulate generation during pulsed laser deposition of superconductor thin films

International Nuclear Information System (INIS)

Singh, R.K.

1993-01-01

The nature of evaporation/ablation characteristics during pulsed laser deposition strongly controls the quality of laser-deposited films. To understand the origin of particulates in laser deposited films, the authors have simulated the thermal history of YBa 2 Cu 3 O 7 targets under intense nanosecond laser irradiation by numerically solving the heat flow equation with appropriate boundary conditions. During planar surface evaporation of the target material, the sub-surface temperatures were calculated to be higher than the surface temperatures. While the evaporating surface of the target is constantly being cooled due to the latent heat of vaporization, subsurface superheating occurs due to the finite absorption depth of the laser beam. Sub-surface superheating was found to increase with decreasing absorption coefficient and thermal conductivity of the target, and with increasing energy density. The superheating may lead to sub-surface nucleation and growth of the gaseous phase which can expand rapidly leading to microexplosions and ''volume expulsion'' of material from the target. Experiments conducted by the authors and other research groups suggest a strong relation between degree of sub-surface superheating and particle density in laser-deposited films

Synthesis and characterization of amorphous SiO{sub 2} nanowires via pulsed laser deposition accompanied by N{sub 2} annealing

Energy Technology Data Exchange (ETDEWEB)

Li, Hui; Guan, Leilei; Xu, Zhuoqi; Zhao, Yu; Sun, Jian; Wu, Jiada; Xu, Ning, E-mail: ningxu@fudan.edu.cn

2016-12-15

Highlights: • The SiO{sub 2} nanowires were synthesized by PLD accompanied by N{sub 2} annealing. • The as-grown SiO{sub 2} nanowires were analyzed by HRTEM, SAED and EDS. • The grown SiO{sub 2} nanowire films are transparent in the range of 350–800 nm. • The SiO{sub 2} nanowire films can emit stable ultraviolet emission. - Abstract: Amorphous SiO{sub 2} nanowires are successfully fabricated on fused silica substrates covered by nickel/carbon catalyst bilayers via a method of pulsed laser deposition accompanied by annealing in ambient N{sub 2}. The field emission scanning electron microscopy images show that the optimum annealing temperature for the growth of SiO{sub 2} nanowires is about 1200 °C and the grown SiO{sub 2} nanowires become denser, longer and more uniform with the increment of annealing duration. The results of transmission electron microscopy and high-resolution transmission electron microscopy show that the grown nanowires are amorphous and have dark spheres on their tops. The analyses of energy dispersive X-ray spectroscopy reveal that the nanowires are composed of SiO{sub 2} and the dark spheres on their tops contain little nickel. It is inferred that nickel, carbon and CO are the key elements to promote the SiO{sub 2} nanowire growth in the solid-liquid-solid mode. Transmission spectra demonstrate that the as-grown nanowire thin films can have about 94% average transmittance in the range of 350–800 nm, meanwhile the photoluminescence spectra of the as-grown SiO{sub 2} nanowire samples show stable ultraviolet emission centered at about 363 nm with a shoulder at about 393 nm.

Laser plasma generation of hydrogen-free diamond-like carbon thin films on Zr-2.5Nb CANDU pressure tube materials and silicon wafers with a pulsed high-power CO2 laser

International Nuclear Information System (INIS)

Ebrahim, N.A.; Mouris, J.F.; Hoffmann, C.R.J.; Davis, R.W.

1995-06-01

We report the first experiments on the laser plasma deposition of hydrogen-free, diamond-like carbon (DLC) films on Zr-2.5Nb CANDU pressure-tube materials and silicon substrates, using the short-pulse, high-power, CO 2 laser in the High-Power Laser Laboratory at Chalk River Laboratories. The films were (AFM). The thin films show the characteristic signature of DLC films in the Raman spectra obtained using a krypton-ion (Kr + ) laser. The Vickers ultra-low-load microhardness tests show hardness of the coated surface of approximately 7000 Kg force mm -2 , which is consistent with the hardness associated with DLC films. AFM examination of the film morphology shows diamond-like crystals distributed throughout the film, with film thicknesses of up to 0.5 μm generated with 50 laser pulses. With significantly more laser pulses, it is expected that very uniform diamond-like films would be produced. These experiments suggest that it should be possible to deposit hydrogen-free, diamond-like films of relevance to nuclear reactor components with a high-power and high-repetition-rate laser facility. (author). 7 refs., 2 tabs., 15 figs

Pulsed laser deposition of AlMgB₁₄ thin films

Energy Technology Data Exchange (ETDEWEB)

Britson, Jason Curtis [Iowa State Univ., Ames, IA (United States)

2008-11-18

Hard, wear-resistant coatings of thin film borides based on AlMgB₁₄ have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB₁₄ used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB₁₄ has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB₁₄ films. Processing methods to eliminate large particles on the surface of the AlMgB₁₄ films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

Coatings synthesised by the pulsed laser ablation of a B{sub 4}C/W{sub 2}B{sub 5} ceramic composite

Energy Technology Data Exchange (ETDEWEB)

Tadadjeu Sokeng, I., E-mail: ifriky@tlabs.ac.za [Department of Electrical, Electronics and Computer Engineering, French South African Institute of Technology/Cape Peninsula University of Technology, Bellville campus, PO Box 1906, Bellville, 7530 (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, 7129, PO Box 722, Somerset West, Western Cape Province (South Africa); UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Ngom, B.D. [Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, 7129, PO Box 722, Somerset West, Western Cape Province (South Africa); UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Laboratoire de Photonique et de Nanofrabrication, Groupes de physique du Solide et Sciences des Matriaux (GPSSM), Facult des sciences et Techniques Universit Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar, Fann Dakar (Senegal); Msimanga, M. [iThemba LABS Gauten, Private Bag 11, WITS 2050 Johannesburg (South Africa); Nuru, Z.Y.; Kotsedi, L.; Maaza, M. [Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, 7129, PO Box 722, Somerset West, Western Cape Province (South Africa); UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Van Zyl, R.R. [Department of Electrical, Electronics and Computer Engineering, French South African Institute of Technology/Cape Peninsula University of Technology, Bellville campus, PO Box 1906, Bellville, 7530 (South Africa)

2015-10-30

A pellet of B{sub 4}C/W{sub 2}B{sub 5} ceramic composite was characterised and subjected to pulsed laser ablation for the deposition of coatings on corning glass substrates. We reports an attempt to produce coatings from B{sub 4}C/W{sub 2}B{sub 5} by pulsed laser deposition (PLD). The thermal, electric and mechanical properties of B{sub 4}C/W{sub 2}B{sub 5} suggest that coatings synthesised from this composite can be used for space applications. The samples were characterised using X-ray Diffraction, Atomic Force Microscopy and Heavy Ion Elastic Recoil Detection Analysis. The characterisation of the samples deposited on soda lime corning glass showed that the laser energy used in this PLD was enough to obtain non amorphous coatings formed by some alteration of the tungsten carbide crystal lattice at room temperature, and that there was no stoichiometry transfer as would be expected from PLD. The coating also showed space applicable features worth investigating. - Highlights: • B{sub 4}C/W{sub 2}B{sub 5} ceramic composite was ablated for deposition on corning glass subtrates. • Non-amorphous coating was obtained at room temperature. • There was no stoichiometry transfer as would be expected from Pulsed Laser Deposition.

Thermal stability of amorphous carbon films grown by pulsed laser deposition

Science.gov (United States)

Friedmann, T. A.; McCarty, K. F.; Barbour, J. C.; Siegal, M. P.; Dibble, Dean C.

1996-03-01

The thermal stability in vacuum of amorphous tetrahedrally coordinated carbon (a-tC) films grown on Si has been assessed by in situ Raman spectroscopy. Films were grown in vacuum on room-temperature substrates using laser fluences of 12, 22, and 45 J/cm2 and in a background gas of either hydrogen or nitrogen using a laser fluence of 45 J/cm2. The films grown in vacuum at high fluence (≳20J/cm2) show little change in the a-tC Raman spectra with temperature up to 800 °C. Above this temperature the films convert to glassy carbon (nanocrystalline graphite). Samples grown in vacuum at lower fluence or in a background gas (H2 or N2) at high fluence are not nearly as stable. For all samples, the Raman signal from the Si substrate (observed through the a-tC film) decreases in intensity with annealing temperature indicating that the transparency of the a-tC films is decreasing with temperature. These changes in transparency begin at much lower temperatures (˜200 °C) than the changes in the a-tC Raman band shape and indicate that subtle changes are occurring in the a-tC films at lower temperatures.

Bioactive glass and hydroxyapatite thin films obtained by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Gyorgy, E. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania) and Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona, Campus UAB, 08193 Bellaterra (Spain)]. E-mail: egyorgy@icmab.es; Grigorescu, S. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Socol, G. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Janackovic, D. [Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11000 Belgrade (Serbia); Dindune, A. [Institute of Inorganic Chemistry of the Riga Technical University (Latvia); Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Kanepe, Z. [Institute of Inorganic Chemistry of the Riga Technical University (Latvia); Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Palcevskis, E. [Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Zdrentu, E.L. [Institute of Biochemistry, Splaiul Independentei 296, Bucharest (Romania); Petrescu, S.M. [Institute of Biochemistry, Splaiul Independentei 296, Bucharest (Romania)

2007-07-31

Bioactive glass (BG), calcium hydroxyapatite (HA), and ZrO{sub 2} doped HA thin films were grown by pulsed laser deposition on Ti substrates. An UV KrF{sup *} ({lambda} = 248 nm, {tau} {>=} 7 ns) excimer laser was used for the multi-pulse irradiation of the targets. The substrates were kept at room temperature or heated during the film deposition at values within the (400-550 deg. C) range. The depositions were performed in oxygen and water vapor atmospheres, at pressure values in the range (5-40 Pa). The HA coatings were heat post-treated for 6 h in a flux of hot water vapors at the same temperature as applied during deposition. The surface morphology, chemical composition, and crystalline quality of the obtained thin films were studied by scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The films were seeded for in vitro tests with Hek293 (human embryonic kidney) cells that revealed a good adherence on the deposited layers. Biocompatibility tests showed that cell growth was better on HA than on BG thin films.

New results in pulsed laser deposition of poly-methyl-methacrylate thin films

International Nuclear Information System (INIS)

Cristescu, R.; Socol, G.; Mihailescu, I.N.; Popescu, M.; Sava, F.; Ion, E.; Morosanu, C.O.; Stamatin, I.

2003-01-01

Thin organic films based on poly-methyl-methacrylate (PMMA) polymer have been obtained by pulsed laser deposition (PLD) on silicon substrates. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy (RS). We observed that the film composition and structure depend on the laser fluence and on the temperature of the substrate during deposition

Pulsed laser deposition of antimicrobial silver coating on Ormocer (registered) microneedles

Energy Technology Data Exchange (ETDEWEB)

Gittard, S D; Narayan, R J; Jin, C; Monteiro-Riviere, N A [Joint Department of Biomedical Engineering, North Carolina State University, Raleigh, NC 27695 (United States); Ovsianikov, A; Chichkov, B N [Laser Zentrum Hannover, Hollerithallee 8, 30419 Hannover (Germany); Stafslien, S; Chisholm, B, E-mail: roger_narayan@msn.co [Center for Nanoscale Science and Engineering, North Dakota State University, 1805 Research Park Drive, Fargo, ND 58102 (United States)

2009-12-15

One promising option for transdermal delivery of protein- and nucleic acid-based pharmacologic agents involves the use of microneedles. However, microneedle-generated pores may allow microorganisms to penetrate the stratum corneum layer of the epidermis and cause local or systemic infection. In this study, microneedles with antimicrobial functionality were fabricated using two-photon polymerization-micromolding and pulsed laser deposition. The antibacterial activity of the silver-coated organically modified ceramic (Ormocer (registered) ) microneedles was demonstrated using an agar diffusion assay. Human epidermal keratinocyte viability on the Ormocer (registered) surfaces coated with silver was similar to that on uncoated Ormocer (registered) surfaces. This study indicates that coating microneedles with silver thin films using pulsed laser deposition is a useful and novel approach for creating microneedles with antimicrobial functionality. (communication)

Pulsed laser deposition of antimicrobial silver coating on Ormocer (registered) microneedles

International Nuclear Information System (INIS)

Gittard, S D; Narayan, R J; Jin, C; Monteiro-Riviere, N A; Ovsianikov, A; Chichkov, B N; Stafslien, S; Chisholm, B

2009-01-01

One promising option for transdermal delivery of protein- and nucleic acid-based pharmacologic agents involves the use of microneedles. However, microneedle-generated pores may allow microorganisms to penetrate the stratum corneum layer of the epidermis and cause local or systemic infection. In this study, microneedles with antimicrobial functionality were fabricated using two-photon polymerization-micromolding and pulsed laser deposition. The antibacterial activity of the silver-coated organically modified ceramic (Ormocer (registered) ) microneedles was demonstrated using an agar diffusion assay. Human epidermal keratinocyte viability on the Ormocer (registered) surfaces coated with silver was similar to that on uncoated Ormocer (registered) surfaces. This study indicates that coating microneedles with silver thin films using pulsed laser deposition is a useful and novel approach for creating microneedles with antimicrobial functionality. (communication)

Time-resolved diagnostics of excimer laser-generated ablation plasmas used for pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Geohegan, D.B.

1994-09-01

Characteristics of laser plasmas used for pulsed laser deposition (PLD) of thin films are examined with four in situ diagnostic techniques: Optical emission spectroscopy, optical absorption spectroscopy, ion probe studies, and gated ICCD (intensified charge-coupled-device array) fast photography. These four techniques are complementary and permit simultaneous views of the transport of ions, excited states, ground state neutrals and ions, and hot particulates following KrF laser ablation of YBCO, BN, graphite and Si in vacuum and background gases. The implementation and advantages of the four techniques are first described in order to introduce the key features of laser plasmas for pulsed laser deposition. Aspects of the interaction of the ablation plume with background gases (i.e., thermalization, attenuation, shock formation) and the collision of the plasma plume with the substrate heater are then summarized. The techniques of fast ICCD photography and gated photon counting are then applied to investigate the temperature, velocity, and spatial distribution of hot particles generated during KrF ablation of YBCO, BN, Si and graphite. Finally, key features of fast imaging of the laser ablation of graphite into high pressure rare gases are presented in order to elucidate internal reflected shocks within the plume, redeposition of material on a surface, and formation of hot nanoparticles within the plume.

Time-resolved diagnostics of excimer laser-generated ablation plasmas used for pulsed laser deposition

International Nuclear Information System (INIS)

Geohegan, D.B.

1994-01-01

Characteristics of laser plasmas used for pulsed laser deposition (PLD) of thin films are examined with four in situ diagnostic techniques: Optical emission spectroscopy, optical absorption spectroscopy, ion probe studies, and gated ICCD (intensified charge-coupled-device array) fast photography. These four techniques are complementary and permit simultaneous views of the transport of ions, excited states, ground state neutrals and ions, and hot particulates following KrF laser ablation of YBCO, BN, graphite and Si in vacuum and background gases. The implementation and advantages of the four techniques are first described in order to introduce the key features of laser plasmas for pulsed laser deposition. Aspects of the interaction of the ablation plume with background gases (i.e., thermalization, attenuation, shock formation) and the collision of the plasma plume with the substrate heater are then summarized. The techniques of fast ICCD photography and gated photon counting are then applied to investigate the temperature, velocity, and spatial distribution of hot particles generated during KrF ablation of YBCO, BN, Si and graphite. Finally, key features of fast imaging of the laser ablation of graphite into high pressure rare gases are presented in order to elucidate internal reflected shocks within the plume, redeposition of material on a surface, and formation of hot nanoparticles within the plume

Influence of pulse width and target density on pulsed laser deposition of thin YBaCuO film

International Nuclear Information System (INIS)

Vikram, S.

1999-01-01

We have studied the effects of temporal pulse width and target density on the deposition of thin films of YBaCuO. A 248nm excimer laser and an 825nm Ti-sapphire laser were used to conduct the experiments with pulse widths of 27 ns, 16 ns, and 150 fs, and target densities of 80% and 90%. Scanning electron microscope photomicrographs and profilometer traces show a striking difference between nanosecond and femtosecond laser irradiation. Shortening the pulse width reduced particulate formation, provided stoichiometry, and improved the film properties. Decreasing the target density raised the ablation rate, produced thicker but nonuniform films, and reduced particulate formation

Influence of pulse width and target density on pulsed laser deposition of thin YBaCuO film.

Energy Technology Data Exchange (ETDEWEB)

Vikram, S.

1999-01-20

We have studied the effects of temporal pulse width and target density on the deposition of thin films of YBaCuO. A 248nm excimer laser and an 825nm Ti-sapphire laser were used to conduct the experiments with pulse widths of 27 ns, 16 ns, and 150 fs, and target densities of 80% and 90%. Scanning electron microscope photomicrographs and profilometer traces show a striking difference between nanosecond and femtosecond laser irradiation. Shortening the pulse width reduced particulate formation, provided stoichiometry, and improved the film properties. Decreasing the target density raised the ablation rate, produced thicker but nonuniform films, and reduced particulate formation.

Hydrogenated amorphous silicon p-i-n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing

NARCIS (Netherlands)

Wank, M. A.; van Swaaij, R.; R. van de Sanden,; Zeman, M.

2012-01-01

We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200 degrees C and growth rates of about 1?nm/s. Fourier transform infrared spectroscopy of intrinsic films showed a densification with

Morphology and structural studies of WO_3 films deposited on SrTiO_3 by pulsed laser deposition

International Nuclear Information System (INIS)

Kalhori, Hossein; Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael; Ranjbar, Mehdi; Salamati, Hadi

2016-01-01

Highlights: • Highly oriented WO_3 stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO_3 films at 700 °C from monoclinic to tetragonal. - Abstract: WO_3 films have been grown by pulsed laser deposition on SrTiO_3 (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

Growth of superconducting MgB2 films by pulsed-laser deposition using a Nd-YAG laser

International Nuclear Information System (INIS)

Badica, P; Togano, K; Awaji, S; Watanabe, K

2006-01-01

Thin films of MgB 2 on r-cut Al 2 O 3 substrates have been grown by pulsed-laser deposition (PLD) using a Nd-YAG laser (fourth harmonic-266 nm) instead of the popular KrF excimer laser. The growth window to obtain superconducting films is laser energy 350-450 mJ and vacuum pressure with Ar-buffer gas of 1-8/10 Pa (initial background vacuum 0.5-1 x 10 -3 Pa). Films were deposited at room temperature and post-annealed in situ and ex situ at temperatures of 500-780 0 C and up to 1 h. Films are randomly oriented with maximum critical temperature (offset of resistive transition) of 27 K. SEM/TEM/EDS investigations show that they are mainly composed of small sphere-like particles (≤20 nm), and contain oxygen and some carbon, uniformly distributed in the flat matrix, but the amount of Mg and/or oxygen is higher in the aggregates-droplets (100-1000 nm) observed on the surface of the film's matrix. Some aspects of the processing control and dependences on film characteristics are discussed. The technique is promising for future development of coated conductors

Modelling of the energy density deposition profiles of ultrashort laser pulses focused in optical media

International Nuclear Information System (INIS)

Vidal, F; Lavertu, P-L; Bigaouette, N; Moore, F; Brunette, I; Giguere, D; Kieffer, J-C; Olivie, G; Ozaki, T

2007-01-01

The propagation of ultrashort laser pulses in dense optical media is investigated theoretically by solving numerically the nonlinear Schroedinger equation. It is shown that the maximum energy density deposition as a function of the pulse energy presents a well-defined threshold that increases with the pulse duration. As a consequence of plasma defocusing, the maximum energy density deposition is generally smaller and the size of the energy deposition zone is generally larger for shorter pulses. Nevertheless, significant values of the energy density deposition can be obtained near threshold, i.e., at lower energy than for longer pulses

Pulsed Laser Deposition of Tungsten Thin Films on Graphite

International Nuclear Information System (INIS)

Kassem, W.; Tabbal, M.; Roumie, M.

2011-01-01

Thin coatings of Tungsten were deposited on substrates fabricated by pre-depositing graphite thin layers on Si(100) wafers. We ablate pure W target using a 20 ns KrF excimer laser (248 nm) in an Ar ambient. The effect of background gas pressure, substrate temperature, and laser fluence, on the properties of the deposited W layers is studied using several techniques including X-Ray Diffraction, Atomic Force Microscopy, surface profilometry, and Rutherford Back-Scattering spectrometry. Our results indicate that the deposited layers consist of the well-crystallized body-centered-cubic α-W phase with bulk-like properties, particularly for films deposited at a substrate temperature of 450 0 C, laser fluence greater than 400mJ, and pressure of about 10mTorr. (author)

Hydrogenated amorphous silicon p–i–n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing

NARCIS (Netherlands)

Wank, M.A.; Swaaij, van R.A.C.M.M.; Sanden, van de M.C.M.; Zeman, M.

2012-01-01

We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200¿°C and growth rates of about 1¿nm/s. Fourier transform infrared spectroscopy of intrinsic films showed a densification with increasing

Laser spot welding of cobalt-based amorphous metal foils

International Nuclear Information System (INIS)

Runchev, Dobre; Dorn, Lutc; Jaferi, Seifolah; Purbst, Detler

1997-01-01

The results concerning weldability of amorphous alloy (VAC 6025F) in shape of foils and the quality of laser-spot welded joints are presented in this paper. The aim of the research was the production of a high quality welding joint, by preserving the amorphous structure. The quality of the joint was tested by shear strength analysis and microhardness measuring. The metallographic studies were made by using optical microscope and SEM. The results show that (1) overlapped Co based amorphous metals foils can be welded with high-quality by a pulsed Nd: YAG-Laser, but only within a very narrow laser parameter window; (2) the laser welded spots show comparably high strength as the basic material; (3) the structure of the welded spot remains amorphous, so that the same characteristics as the base material can be achieved. (author)

Microstructure of pulsed-laser deposited PZT on polished and annealed MGO substrates

NARCIS (Netherlands)

King, S.L.; Coccia, L.G.; Gardeniers, Johannes G.E.; Boyd, I.W.

1996-01-01

Thin films of Lead-Zirconate-Titanate (PZT) have been grown by pulsed-laser-deposition (PLD) onto polished MgO substrates both with and without pre-annealing. The surface morphology of polished MgO substrates, which are widely used for deposition, is examined by AFM. Commercially available,

Vertically aligned carbon nanotube growth by pulsed laser deposition and thermal chemical vapor deposition methods

International Nuclear Information System (INIS)

Sohn, Jung Inn; Nam, Chunghee; Lee, Seonghoon

2002-01-01

We have grown vertically aligned carbon nanotubes on the various substrates such as a planar p-type Si(1 0 0) wafer, porous Si wafer, SiO 2 , Si 3 N 4 , Al 2 O 3 , and Cr by thermal chemical vapor deposition (CVD) at 800 deg.C, using C 2 H 2 gas as a carbon source and Fe catalyst films deposited by a pulsed laser on the substrates. The Fe films were deposited for 5 min by pulsed laser deposition (PLD). The advantage of Fe deposition by PLD over other deposition methods lies in the superior adhesion of Fe to a Si substrate due to high kinetic energies of the generated Fe species. Scanning electron microscopy (SEM) images show that vertically well-aligned carbon nanotubes are grown on Fe nanoparticles formed from the thermal annealing of the Fe film deposited by PLD on the various substrates. Atomic force microscopy (AFM) images show that the Fe film annealed at 800 deg.C is broken to Fe nanoparticles of 10-50 nm in size. We show that the appropriate density of Fe nanoparticles formed from the thermal annealing of the film deposited by PLD is crucial in growing vertically aligned carbon nanotubes. Using a PLD and a lift-off method, we developed the selective growth of carbon nanotubes on a patterned Fe-coated Si substrate

Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

Science.gov (United States)

Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

2015-07-01

Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W; Decker, Ulrich; Rauschenbach, Bernd

2015-01-01

Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ∼21% and 3–4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications. (paper)

Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

Energy Technology Data Exchange (ETDEWEB)

Palla-Papavlu, A., E-mail: apalla@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Rusen, L.; Dinca, V.; Filipescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Lippert, T. [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania)

2014-05-01

In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm{sup 2} the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

Science.gov (United States)

Palla-Papavlu, A.; Rusen, L.; Dinca, V.; Filipescu, M.; Lippert, T.; Dinescu, M.

2014-05-01

In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm2 the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

Pure and Sn-doped ZnO films produced by pulsed laser deposition

DEFF Research Database (Denmark)

Holmelund, E.; Schou, Jørgen; Tougaard, S.

2002-01-01

A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced...

Matrix shaped pulsed laser deposition: New approach to large area and homogeneous deposition

Energy Technology Data Exchange (ETDEWEB)

Akkan, C.K.; May, A. [INM – Leibniz Institute for New Materials, CVD/Biosurfaces Group, Campus D2 2, 66123 Saarbrücken (Germany); Hammadeh, M. [Department for Obstetrics, Gynecology and Reproductive Medicine, IVF Laboratory, Saarland University Medical Center and Faculty of Medicine, Building 9, 66421 Homburg, Saar (Germany); Abdul-Khaliq, H. [Clinic for Pediatric Cardiology, Saarland University Medical Center and Faculty of Medicine, Building 9, 66421 Homburg, Saar (Germany); Aktas, O.C., E-mail: cenk.aktas@inm-gmbh.de [INM – Leibniz Institute for New Materials, CVD/Biosurfaces Group, Campus D2 2, 66123 Saarbrücken (Germany)

2014-05-01

Pulsed laser deposition (PLD) is one of the well-established physical vapor deposition methods used for synthesis of ultra-thin layers. Especially PLD is suitable for the preparation of thin films of complex alloys and ceramics where the conservation of the stoichiometry is critical. Beside several advantages of PLD, inhomogeneity in thickness limits use of PLD in some applications. There are several approaches such as rotation of the substrate or scanning of the laser beam over the target to achieve homogenous layers. On the other hand movement and transition create further complexity in process parameters. Here we present a new approach which we call Matrix Shaped PLD to control the thickness and homogeneity of deposited layers precisely. This new approach is based on shaping of the incoming laser beam by a microlens array and a Fourier lens. The beam is split into much smaller multi-beam array over the target and this leads to a homogenous plasma formation. The uniform intensity distribution over the target yields a very uniform deposit on the substrate. This approach is used to deposit carbide and oxide thin films for biomedical applications. As a case study coating of a stent which has a complex geometry is presented briefly.

Photoluminescence of Eu-doped LiYF4 thin films grown by pulsed laser deposition and matrix-assisted pulsed laser evaporation

International Nuclear Information System (INIS)

Stokker-Cheregi, F; Matei, A; Dinescu, M; Secu, C E; Secu, M

2014-01-01

Matrix-assisted pulsed laser evaporation (MAPLE) has been investigated as an alternative to the pulsed laser deposition (PLD) technique for Eu 3+ -doped crystalline LiYF 4 thin-films deposition. MAPLE assumes laser ablation of a frozen target made of the material of interest diluted in a solvent, rather than that of a bulk target, of either pressed powder or single crystal, used in the case of PLD. Our approach stems from the assumption that laser ablation of a frozen dilute target would result in thin films with improved morphology, as compared to PLD. Indeed, we find that roughness values of samples obtained by the MAPLE technique are four times lower than in the case of PLD. A lower transmittance was noticed for PLD obtained layers with respect to those grown by MAPLE due to strong scattering of light by the morphological defects. Photoluminescence spectra are showing characteristic Eu 3+ -ion luminescence bands at 578, 591, 612, 650 and 698 nm ( 5 D 0  →  7 F J ); crystal field splitting of the bands indicates dopant ions incorporation in the host material during transfer by either PLD or MAPLE. (paper)

Growth modes of pentacene films obtained by pulsed laser deposition

International Nuclear Information System (INIS)

Wisz, G.; Kuzma, M.; Virt, I.; Sagan, P.; Rudyj, I.

2011-01-01

Thin pentacene films were deposited on KCl and ITO/glass substrates by the pulsed laser deposition method (PLD) using a YAG:Nd 3+ laser with a second harmonic (λ = 532 nm). We compared the structure of the layer on differently oriented substrates with respect to the pentacene plasma plume - vertical and parallel orientation. The structure of the layers formed was examined using SEM, RHEED and THEED methods. The lattice parameters of the layer deposited on KCl were determined from THEED pattern (a = 5.928 A, b 7.874 A, c = 14,98 A, α = 76.54 o , β 75.17 o , γ = 89.20 o ). The preferred direction [11-bar 0] of the layer growth on KCl substrate was addressed. The effect of the substrate orientation results in a different growth mode of the layers.

Plume-induced stress in pulsed-laser deposited CeO2 films

International Nuclear Information System (INIS)

Norton, D.P.; Park, C.; Budai, J.D.; Pennycook, S.J.; Prouteau, C.

1999-01-01

Residual compressive stress due to plume-induced energetic particle bombardment in CeO 2 films deposited by pulsed-laser deposition is reported. For laser ablation film growth in low pressures, stresses as high as 2 GPa were observed as determined by substrate curvature and four-circle x-ray diffraction. The amount of stress in the films could be manipulated by controlling the kinetic energies of the ablated species in the plume through gas-phase collisions with an inert background gas. The film stress decreased to near zero for argon background pressures greater than 50 mTorr. At these higher background pressures, the formation of nanoparticles in the deposited film was observed. copyright 1999 American Institute of Physics

Design and spectroscopic reflectometry characterization of pulsed laser deposition combinatorial libraries

International Nuclear Information System (INIS)

Schenck, Peter K.; Bassim, Nabil D.; Otani, Makoto; Oguchi, Hiroyuki; Green, Martin L.

2007-01-01

The goal of the design of pulsed laser deposition (PLD) combinatorial library films is to optimize the compositional coverage of the films while maintaining a uniform thickness. The deposition pattern of excimer laser PLD films can be modeled with a bimodal cos n distribution. Deposited films were characterized using a spectroscopic reflectometer (250-1000 nm) to map the thickness of both single composition calibration films and combinatorial library films. These distribution functions were used to simulate the composition and thickness of multiple target combinatorial library films. The simulations were correlated with electron-probe microanalysis wavelength-dispersive spectroscopy (EPMA-WDS) composition maps. The composition and thickness of the library films can be fine-tuned by adjusting the laser spot size, fluence, background gas pressure, target geometry and other processing parameters which affect the deposition pattern. Results from compositionally graded combinatorial library films of the ternary system Al 2 O 3 -HfO 2 -Y 2 O 3 are discussed

Optical Emission Spectroscopy of Plasma in Hybrid Pulsed Laser Deposition System

Czech Academy of Sciences Publication Activity Database

Novotný, Michal; Jelínek, Miroslav; Bulíř, Jiří; Lančok, Ján; Jastrabík, Lubomír; Zelinger, Zdeněk

2002-01-01

Roč. 52, Suppl. D (2002), s. 292-298 ISSN 0011-4626 R&D Projects: GA AV ČR IAA1010110 Keywords : optical emission spectroscopy * pulsed laser deposition * RF discharge Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.311, year: 2002

Energy and dose characteristics of ion bombardment during pulsed laser deposition of thin films under pulsed electric field

International Nuclear Information System (INIS)

Fominski, V.Yu.; Nevolin, V.N.; Smurov, I.

2004-01-01

Experiments on pulsed laser deposition of Fe films on Si substrates were performed with the aim to analyze the role of factors determining the formation of an energy spectrum and a dose of ions bombarding the film in strong pulsed electric fields. The amplitude of the high-voltage pulse (-40 kV) applied to the substrate and the laser fluence at the Fe target were fixed during the deposition. Owing to the high laser fluence (8 J/cm 2 ) at a relatively low power (20 mJ), the ionization of the laser plume was high, but the Fe vapor pressure near the substrate was low enough to avoid arcing. Electric signals from a target exposed to laser radiation were measured under different conditions (at different delay times) of application of electric pulses. The Si(100) substrates were analyzed using Rutherford ion backscattering/channeling spectrometry. The ion implantation dose occurred to be the highest if the high-voltage pulse was applied at a moment of time when the ion component of the plume approached the substrate. In this case, the implanted ions had the highest energy determined by the amplitude of the electric pulse. An advance or delay in applying a high-voltage pulse caused the ion dose and energy to decrease. A physical model incorporating three possible modes of ion implantation was proposed for the interpretation of the experimental results. If a laser plume was formed in the external field, ions were accelerated from the front of the dense plasma, and the ion current depended on the gas-dynamic expansion of the plume. The application of a high-voltage pulse, at the instant when the front approached the substrate, maintained the mode that was characteristic of the traditional plasma immersion ion implantation, and the ion current was governed by the dynamics of the plasma sheath in the substrate-to-target gap. In the case of an extremely late application of a high-voltage pulse, ions retained in the entire volume of the experimental chamber (as a result of the

Structural transformations in MoO{sub x} thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Camacho-Lopez, M.A.; Haro-Poniatowski, E. [Departamento de Fisica, Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, 09340, Mexico D. F. (Mexico); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, 11801, Mexico D. F. (Mexico)

2004-01-01

In this work, laser-induced crystallization in MoO{sub x} thin films (1.8{<=}x{<=}2.1) is reported. This transformation involves a MoO{sub x} oxidation and subsequently a crystallization process from amorphous MoO{sub 3} to crystalline {alpha}MoO{sub 3}. For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoO{sub x} to the thermodynamically stable {alpha}MoO{sub 3} crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoO{sub x} to a mixture of {alpha}MoO{sub 3} and the thermodynamically unstable {beta}MoO{sub 3} crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments. (orig.)

Fabrication of periodical surface structures by picosecond laser irradiation of carbon thin films: transformation of amorphous carbon in nanographite

Energy Technology Data Exchange (ETDEWEB)

Popescu, C.; Dorcioman, G. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, Magurele RO-077125 (Romania); Bita, B. [National Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, Voluntari RO-077190 (Romania); Faculty of Physics, 405 Atomistilor Street, Magurele RO-077125 (Romania); Besleaga, C.; Zgura, I. [National Institute of Materials Physics, 105bis Atomistilor Street, Magurele RO-077125 (Romania); Himcinschi, C. [Institute of Theoretical Physics, TU Bergakademie Freiberg, Freiberg D-09596 (Germany); Popescu, A.C., E-mail: andrei.popescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, Magurele RO-077125 (Romania)

2016-12-30

Highlights: • Ripples obtained on carbon films after irradiation with visible ps laser pulses. • Amorphous carbon was transformed in nanographite following irradiation. • Ripples had a complex morphology, being made of islands of smaller ripples. • Hydrophilic carbon films became hydrophobic after surface structuring. - Abstract: Thin films of carbon were synthesized by ns pulsed laser deposition in vacuum on silicon substrates, starting from graphite targets. Further on, the films were irradiated with a picosecond laser source emitting in visible at 532 nm. After tuning of laser parameters, we obtained a film surface covered by laser induced periodical surface structures (LIPSS). They were investigated by optical, scanning electron and atomic force microscopy. It was observed that changing the irradiation angle influences the LIPSS covered area. At high magnification it was revealed that the LIPSS pattern was quite complex, being composed of other small LIPSS islands, interconnected by bridges of nanoparticles. Raman spectra for the non-irradiated carbon films were typical for a-C type of diamond-like carbon, while the LIPSS spectra were characteristic to nano-graphite. The pristine carbon film was hydrophilic, while the LIPSS covered film surface was hydrophobic.

History and current status of commercial pulsed laser deposition equipment

International Nuclear Information System (INIS)

Greer, James A

2014-01-01

This paper will review the history of the scale-up of the pulsed laser deposition (PLD) process from small areas ∼1 cm 2 up to 10 m 2 starting in about 1987. It also documents the history of commercialization of PLD as various companies become involved in selling fully integrated laser deposition tools starting in 1989. The paper will highlight the current state of the art of commercial PLD equipment for R and D that is available on the market today from mainstream vendors as well as production-oriented applications directed at piezo-electric materials for microelectromechanical systems and high-temperature superconductors for coated-conductor applications. The paper clearly demonstrates that considerable improvements have been made to scaling this unique physical vapour deposition process to useful substrate sizes, and that commercial deposition equipment is readily available from a variety of vendors to address a wide variety of technologically important thin-film applications. (paper)

Pulsed laser deposition of high Tc superconducting thin films

International Nuclear Information System (INIS)

Singh, R.K.; Narayan, J.

1990-01-01

This paper reports on the pulsed laser evaporation (PLE) technique for deposition of thin films characterized by a number of unique properties. Based on the experimental characteristics, a theoretical model is developed which considers the formation and anisotropic three dimensional expansion of the laser generated plasma. This model explains most of the experimental features observed in PLE. We have also employed the PLE technique for in-situ fabrication of YBa 2 Cu 3 O 7 superconducting thin films on different substrates in the temperature range of 500--650 degrees C. At temperatures below 600 degrees C, a biased interposing ring between the substrate and the target was found to significantly improve the superconducting properties. The minimum ion channeling yields were between 3--3.5% for films deposited on (100) SrTiO 3 and (100) LaAlO 3 substrates

In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

KAUST Repository

Avila-Avendano, Jesus

2016-04-09

In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

KAUST Repository

Avila-Avendano, Jesus; Mejia, Israel; Alshareef, Husam N.; Guo, Zaibing; Young, Chadwin; Quevedo-Lopez, Manuel

2016-01-01

In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

Morphology and structural studies of WO{sub 3} films deposited on SrTiO{sub 3} by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Kalhori, Hossein, E-mail: h.kalhori@ph.iut.ac.ir [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland); Department of Physics, Isfahan University of Technology, Isfahan 84156-8311 (Iran, Islamic Republic of); Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland); Ranjbar, Mehdi; Salamati, Hadi [Department of Physics, Isfahan University of Technology, Isfahan 84156-8311 (Iran, Islamic Republic of)

2016-12-30

Highlights: • Highly oriented WO{sub 3} stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO{sub 3} films at 700 °C from monoclinic to tetragonal. - Abstract: WO{sub 3} films have been grown by pulsed laser deposition on SrTiO{sub 3} (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

Surface-enhanced Raman spectroscopy (SERS) using Ag nanoparticle films produced by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Smyth, C.A., E-mail: smythc2@tcd.ie [School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Mirza, I.; Lunney, J.G.; McCabe, E.M. [School of Physics, Trinity College Dublin, Dublin 2 (Ireland)

2013-01-01

Highlights: Black-Right-Pointing-Pointer Pulsed laser deposition (PLD) produces silver nanoparticle films. Black-Right-Pointing-Pointer These films can be used for surface-enhanced Raman spectroscopy (SERS). Black-Right-Pointing-Pointer Commercial film shows good SERS reproducibility but poor signal intensity. Black-Right-Pointing-Pointer PLD shows a good SERS response coupled with good reproducibility. - Abstract: Thin silver nanoparticle films, of thickness 7 nm, were deposited onto glass microslides using pulsed laser deposition (PLD). The films were then characterised using UV-vis spectroscopy and scanning transmission electron microscopy before Rhodamine 6G was deposited onto them for investigation using surface-enhanced Raman spectroscopy (SERS). The sensitivity obtained using SERS was compared to that obtained using a colloidal silver suspension and also to a commercial SERS substrate. The reproducibility of the films is also examined using statistical analysis.

Pulsed laser deposition and characterisation of thin superconducting films

Energy Technology Data Exchange (ETDEWEB)

Morone, A [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

1996-09-01

Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

Deposition of Y thin films by nanosecond UV pulsed laser ablation for photocathode application

International Nuclear Information System (INIS)

Lorusso, A.; Anni, M.; Caricato, A.P.; Gontad, F.; Perulli, A.; Taurino, A.; Perrone, A.; Chiadroni, E.

2016-01-01

In this work, yttrium (Y) thin films have been deposited on Si (100) substrates by the pulsed laser deposition technique. Ex-situ morphological, structural and optical characterisations of such films have been performed by scanning electron microscopy, X-ray diffractometry, atomic force microscopy and ellipsometry. Polycrystalline films with a thickness of 1.2 μm, homogenous with a root mean square roughness of about 2 nm, were obtained by optimised laser irradiation conditions. Despite the relatively high thickness, the films resulted very adherent to the substrates. The high quality of such thin films is important to the synthesis of metallic photocathodes based on Y thin film, which could be used as electron sources of high photoemission performance in radio-frequency guns. - Highlights: • Pulsed laser deposition of Yttrium thin films is investigated. • 1.2 μm thick films were deposited with very low RMS roughness. • The Y thin films were very adherent to the Si substrate • Optical characterisation showed a very high absorption coefficient for the films.

Deposition of Y thin films by nanosecond UV pulsed laser ablation for photocathode application

Energy Technology Data Exchange (ETDEWEB)

Lorusso, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Anni, M. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Caricato, A.P. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Perulli, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Taurino, A. [National Research Council, Institute for Microelectronics & Microsystems, 73100 Lecce (Italy); Perrone, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy)

2016-03-31

In this work, yttrium (Y) thin films have been deposited on Si (100) substrates by the pulsed laser deposition technique. Ex-situ morphological, structural and optical characterisations of such films have been performed by scanning electron microscopy, X-ray diffractometry, atomic force microscopy and ellipsometry. Polycrystalline films with a thickness of 1.2 μm, homogenous with a root mean square roughness of about 2 nm, were obtained by optimised laser irradiation conditions. Despite the relatively high thickness, the films resulted very adherent to the substrates. The high quality of such thin films is important to the synthesis of metallic photocathodes based on Y thin film, which could be used as electron sources of high photoemission performance in radio-frequency guns. - Highlights: • Pulsed laser deposition of Yttrium thin films is investigated. • 1.2 μm thick films were deposited with very low RMS roughness. • The Y thin films were very adherent to the Si substrate • Optical characterisation showed a very high absorption coefficient for the films.

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo; Crovetto, Andrea; Yan, Chang

2017-01-01

We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed. At the ......We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed...

Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Crovetto, Andrea; Canulescu, Stela

2016-01-01

The influence of the laser wavelength on the deposition of copper tin sulfide (CTS) and SnS-rich CTS with a 248-nm KrF excimer laser (pulse length τ = 20 ns) and a 355-nm frequency-tripled Nd:YAG laser (τ = 6 ns) was investigated. A comparative study of the two UV wavelengths shows that the CTS...... film growth rate per pulse was three to four times lower with the 248-nm laser than the 355-nm laser. SnS-rich CTS is more efficiently ablated than pure CTS. Films deposited at high fluence have submicron and micrometer size droplets, and the size and area density of the droplets do not vary significantly...

Pulsed Laser Deposition of Polymers Doped with Fluorescent Probes. Application to Environmental Sensors

International Nuclear Information System (INIS)

Rebollar, E; Villavieja, Mm; Gaspard, S; Oujja, M; Corrales, T; Georgiou, S; Domingo, C; Bosch, P; Castillejo, M

2007-01-01

Pulsed laser deposition (PLD) has been used to obtain thin films of poly(methyl methacrylate) and polystyrene doped with fluorescent probes, amino aromatic compounds S5 and S6, that could be used to sense the presence of contaminating environmental agents. These dopants both in solution and inserted in polymeric films are sensitive to changes in pH, viscosity and polarity, increasing their fluorescence emission and/or modifying the position of their emission band. Films deposits on quartz substrates, obtained by irradiating targets with a Ti:Sapphire laser (800 nm, 120 fs pulse) were analyzed by optical and Environmental Scanning Electron Microscopy, Fluorescence Microscopy, Laser-Induced Fluorescence, Micro Raman Spectroscopy and Flow Injection Analysis-Mass Spectrometry. The transfer of the polymer and the probe to the substrate is observed to be strongly dependent on the optical absorption coefficient of the polymeric component of the target at the irradiation wavelength

Determination of the Young's modulus of pulsed laser deposited epitaxial PZT thin films

NARCIS (Netherlands)

Nazeer, H.; Nguyen, Duc Minh; Woldering, L.A.; Abelmann, Leon; Rijnders, Augustinus J.H.M.; Elwenspoek, Michael Curt

2011-01-01

We determined the Young’s modulus of pulsed laser deposited epitaxially grown PbZr0.52Ti0.48O3 (PZT) thin films on microcantilevers by measuring the difference in cantilever resonance frequency before and after deposition. By carefully optimizing the accuracy of this technique, we were able to show

Multi-stage pulsed laser deposition of aluminum nitride at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Stroescu, H.; Gartner, M.; Anastasescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Fogarassy, Zs. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege Miklos u. 29-33, H-1121 Budapest (Hungary); Mihailescu, N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A., E-mail: szekeres@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Bakalova, S. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania)

2016-06-30

Highlights: • Multi-stage pulsed laser deposition of aluminum nitride at different temperatures. • 800 °C seed film boosts the next growth of crystalline structures at lower temperature. • Two-stage deposited AlN samples exhibit randomly oriented wurtzite structures. • Band gap energy values increase with deposition temperature. • Correlation was observed between single- and multi-stage AlN films. - Abstract: We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at different temperatures. The first stage of deposition was carried out at 800 °C, the optimum temperature for AlN crystallization. In the second stage, the deposition was conducted at lower temperatures (room temperature, 350 °C or 450 °C), in ambient Nitrogen, at 0.1 Pa. The synthesized structures were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), atomic force microscopy and spectroscopic ellipsometry (SE). GIXRD measurements indicated that the two-stage deposited AlN samples exhibited a randomly oriented wurtzite structure with nanosized crystallites. The peaks were shifted to larger angles, indicative for smaller inter-planar distances. Remarkably, TEM images demonstrated that the high-temperature AlN “seed” layers (800 °C) promoted the growth of poly-crystalline AlN structures at lower deposition temperatures. When increasing the deposition temperature, the surface roughness of the samples exhibited values in the range of 0.4–2.3 nm. SE analyses showed structures which yield band gap values within the range of 4.0–5.7 eV. A correlation between the results of single- and multi-stage AlN depositions was observed.

Review of progress in pulsed laser deposition and using Nd:YAG laser in processing of high Tc superconductors

International Nuclear Information System (INIS)

Chen, C.W.; Mukherjee, K.

1993-01-01

The current progress in pulsed laser ablation of high-temperature superconductors is reviewed with emphasis on the effect of pulse-width and wavelength, nature of the plasma plume, post-annealing and methods to improve quality of films grown at low temperature. An ion beam assisted millisecond pulsed laser vapor deposition process has been developed to fabricate YBa 2 Cu 3 O x high T. superconductor thin films. Solution to target overheating problem, effects of oxygen ion beam, properties of deposited films, and effect of silver buffer layer on YSZ substrate are presented. A new laser calcining process has been used to produce near single phase high T c superconductors of Bi-Pb-Sr-Ca-Cu-0 system. The total processing time was reduced to about 100 hours which is about half of that for conventional sintering. For this compound both resistance and magnetic susceptibility data showed an onset of superconducting transition at about 110K. A sharp susceptibility drop was observed above 106K. The zero resistance temperature was about 98K. High T c phase was formed via a different kinetic path in laser calcined sample compare with the conventionally processed sample

Silver-doped layers of implants prepared by pulsed laser deposition

Czech Academy of Sciences Publication Activity Database

Kocourek, Tomáš; Jelínek, Miroslav; Mikšovský, Jan; Jurek, Karel; Čejka, Z.; Kopeček, Jaromír

2013-01-01

Roč. 1, č. 7 (2013), s. 59-61 ISSN 2327-5219 R&D Projects: GA AV ČR KAN300100801 Institutional support: RVO:68378271 Keywords : thin layer * silver * titanium alloy * steel * pulsed laser deposition * adhesion * implant Subject RIV: BM - Solid Matter Physics ; Magnetism http://www.scirp.org/journal/PaperInformation.aspx?paperID=40308#.UvECAfu5dHA

Structural, morphological and optical properties of pulsed laser deposited ZnSe/ZnSeO3 thin films

Science.gov (United States)

Hassan, Syed Ali; Bashir, Shazia; Zehra, Khushboo; Salman Ahmed, Qazi

2018-04-01

The effect of varying laser pulses on structural, morphological and optical behavior of Pulsed Laser Deposited (PLD) ZnSe/ZnSeO3 thin films has been investigated. The films were grown by employing Excimer laser (100 mJ, 248 nm, 18 ns, 30 Hz) at various number of laser pulses i.e. 3000, 4000, 5000 and 6000 with elevated substrate temperature of 300 °C. One film was grown at Room Temperature (RT) by employing 3000 number of laser pulses. In order to investigate the structural analysis of deposited films, XRD analysis was performed. It was observed that the room temperature is not favorable for the growth of crystalline film. However, elevated substrate temperature to 300°C, two phases with preferred orientation of ZnSeO3 (2 1 2) and ZnSe (3 3 1) were identified. AFM and SEM analysis were performed to explore the surface morphology of grown films. Morphological analysis also confirmed the non-uniform film growth at room temperature. At elevated substrate temperature (300 °C), the growth of dendritic rods and cubical crystalline structures are observed for lower number of laser pulses i.e. 3000 and 4000 respectively. With increased number of pulses i.e. 5000 and 6000, the films surface morphology becomes smooth which is confirmed by measurement of surface RMS roughness. Number of grains, skewness, kurtosis and other parameters have been evaluated by statistical analysis. In order to investigate the thickness, and optical properties of deposited films, ellipsometery and UV–Vis spectroscopy techniques were employed. The estimated band gap energy is 2.67 eV for the film grown at RT, whereas band gap values varies from 2.80 eV to 3.01 eV for the films grown at 300 °C with increasing number of laser pulses.

Deposition of zinc oxide thin films by reactive pulsed laser ablation

Czech Academy of Sciences Publication Activity Database

Bílková, Petra; Zemek, Josef; Mitu, B.; Marotta, V.; Orlando, S.

2006-01-01

Roč. 252, - (2006), s. 4604-4609 ISSN 0169-4332 Grant - others:NATO-CNR Outreach Fellowships Programm 2001(XE) 219.34 Institutional research plan: CEZ:AV0Z10100521 Keywords : reactive pulsed laser deposition * zinc oxide * thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.436, year: 2006

Functionalized porphyrin conjugate thin films deposited by matrix assisted pulsed laser evaporation

Energy Technology Data Exchange (ETDEWEB)

Iordache, S. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Popescu, A.C.; Popescu, C.E.; Dorcioman, G.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Ciucu, A.A. [University of Bucharest, Faculty of Chemistry, Bucharest (Romania); Balan, A.; Stamatin, I. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Fagadar-Cosma, E. [Institute of Chemistry Timisoara of Romanian Academy, M. Viteazul Ave. 24, 300223-Timisoara (Romania); Chrisey, D.B. [Tulane University, Departments of Physics and Biomedical Engineering, New Orleans, LA 70118 (United States)

2013-08-01

We report on the deposition of nanostructured porphyrin-base, 5(4-carboxyphenyl)-10,15,20-tris(4-phenoxyphenyl)-porphyrin thin films by matrix assisted pulsed laser evaporation onto silicon substrates with screen-printed electrodes. AFM investigations have shown that at 400 mJ/cm{sup 2} fluence a topographical transition takes place from the platelet-like stacking porphyrin-based nanostructures in a perpendicular arrangement to a quasi-parallel one both relative to the substrate surface. Raman spectroscopy has shown that the chemical structure of the deposited thin films is preserved for fluences within the range of 200–300 mJ/cm{sup 2}. Cyclic voltammograms have demonstrated that the free porphyrin is appropriate as a single mediator for glucose in a specific case of screen-printed electrodes, suggesting potential for designing a new class of biosensors.

Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Craciun, D., E-mail: doina.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Socol, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Lambers, E. [Major Analytical Instrumentation Center, College of Engineering, University of Florida, Gainesville, FL 32611 (United States); McCumiskey, E.J.; Taylor, C.R. [Mechanical and Aerospace Engineering, University of Florida, Gainesville, FL 32611 (United States); Martin, C. [Ramapo College of New Jersey (United States); Argibay, N. [Materials Science and Engineering Center, Sandia National Laboratories, Albuquerque, NM 87123 (United States); Tanner, D.B. [Physics Department, University of Florida, Gainesville, FL 32611 (United States); Craciun, V. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania)

2015-10-15

Highlights: • Nanocrystalline ZrC thin film were grown on Si by pulsed laser deposition technique. • Structural properties weakly depend on the CH{sub 4} pressure used during deposition. • The optimum deposition pressure for low resistivity is around 2 × 10{sup −5} mbar CH{sub 4}. • ZrC films exhibited friction coefficients around 0.4 and low wear rates. - Abstract: Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH{sub 4} pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH{sub 4} pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. Tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

Organic/hybrid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

Science.gov (United States)

Stiff-Roberts, Adrienne D.; Ge, Wangyao

2017-12-01

Some of the most exciting materials research in the 21st century attempts to resolve the challenge of simulating, synthesizing, and characterizing new materials with unique properties designed from first principles. Achievements in such development for organic and organic-inorganic hybrid materials make them important options for electronic and/or photonic devices because they can impart multi-functionality, flexibility, transparency, and sustainability to emerging systems, such as wearable electronics. Functional organic materials include small molecules, oligomers, and polymers, while hybrid materials include inorganic nanomaterials (such as zero-dimensional quantum dots, one-dimensional carbon nanotubes, or two-dimensional nanosheets) combined with organic matrices. A critically important step to implementing new electronic and photonic devices using such materials is the processing of thin films. While solution-based processing is the most common laboratory technique for organic and hybrid materials, vacuum-based deposition has been critical to the commercialization of organic light emitting diodes based on small molecules, for example. Therefore, it is desirable to explore vacuum-based deposition of organic and hybrid materials that include larger macromolecules, such as polymers. This review article motivates the need for physical vapor deposition of polymeric and hybrid thin films using matrix-assisted pulsed laser evaporation (MAPLE), which is a type of pulsed laser deposition. This review describes the development of variations in the MAPLE technique, discusses the current understanding of laser-target interactions and growth mechanisms for different MAPLE variations, surveys demonstrations of MAPLE-deposited organic and hybrid materials for electronic and photonic devices, and provides a future outlook for the technique.

Pulsed laser deposition of SrRuO3 thin-films: The role of the pulse repetition rate

Directory of Open Access Journals (Sweden)

H. Schraknepper

2016-12-01

Full Text Available SrRuO3 thin-films were deposited with different pulse repetition rates, fdep, epitaxially on vicinal SrTiO3 substrates by means of pulsed laser deposition. The measurement of several physical properties (e.g., composition by means of X-ray photoelectron spectroscopy, the out-of-plane lattice parameter, the electric conductivity, and the Curie temperature consistently reveals that an increase in laser repetition rate results in an increase in ruthenium deficiency in the films. By the same token, it is shown that when using low repetition rates, approaching a nearly stoichiometric cation ratio in SrRuO3 becomes feasible. Based on these results, we propose a mechanism to explain the widely observed Ru deficiency of SrRuO3 thin-films. Our findings demand these theoretical considerations to be based on kinetic rather than widely employed thermodynamic arguments.

Pulsed laser deposition of Cu-Sn-S for thin film solar cells

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...... films contained both cubic-phase Cu2SnS3 and orthorhombic-phase SnS...

Effect of laser beam parameters on magnetic properties of Nd-Fe-B thick-film magnets fabricated by pulsed laser deposition

International Nuclear Information System (INIS)

Fukunaga, H.; Nakano, M.; Yanai, T.; Kamikawatoko, T.; Yamashita, F.

2011-01-01

The effects of varying the laser power and the spot diameter of a laser beam on the magnetic properties, morphology, and deposition rate of Nd-Fe-B thick-film magnets fabricated by pulsed laser deposition (PLD) were investigated. Reducing the laser fluence on the target reduces the remanence and increases the Nd content and consequently the coercivity of the prepared films. The spot size of the laser beam was found to affect the film surface morphology, the deposition rate, and the reproducibility of the magnetic properties of the prepared films. Reducing the spot size reduces the number of droplets and the reproducibility of the magnetic properties and increases the droplet size. Controlling the spot size of the laser beam enabled us to maximize the deposition rate. Consequently, a coercivity of 1210 kA/m and a remanence of 0.51 T were obtained at a deposition rate of 11.8 μm/(h·W). This deposition rate is 30% greater than the highest previously reported deposition rate by PLD.

Preparation of hydrogenated amorphous carbon films using a microsecond-pulsed DC capacitive-coupled plasma chemical vapor deposition system operated at high frequency up to 400 kHz

Science.gov (United States)

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-06-01

Hydrogenated amorphous carbon (a-C:H) films are deposited on silicon (Si) substrates using a high-repetition microsecond-pulsed DC plasma chemical vapor deposition (CVD) system from acetylene (C2H2) at a gas pressure of 15 Pa inside a custom-made vacuum chamber. The plasma discharge characteristics, hydrocarbon species, and the microstructure of the resulting films are examined at various pulse repetition rates from 50 to 400 kHz and a fixed duty cycle of 50%. The optical emission spectra confirmed the increase in electron excitation energy from 1.09 to 1.82 eV and the decrease in the intensity ratio of CH/C2 from 1.04 to 0.75 with increasing pulse frequency, indicating the enhanced electron impact dissociation of C2H2 gas. With increasing pulse frequency, the deposition rate gradually increased, reaching a maximum rate of 60 nm/min at 200 kHz, after which a progressive decrease was noted, whereas the deposition area was almost uniform for all the prepared films. Clear trends of increasing sp3 content (amorphization) and decreasing hydrogen (H) content in the films were observed as the pulse repetition rate increased, while most of the hydrogen atoms bonded to carbon atoms by sp3 hybridization rather than by sp2 hybridization.

UV pulsed laser deposition of magnetite thin films

International Nuclear Information System (INIS)

Parames, M.L.; Mariano, J.; Rogalski, M.S.; Popovici, N.; Conde, O.

2005-01-01

Magnetite thin films were grown by pulsed laser deposition in O 2 reactive atmosphere from Fe 3 O 4 targets. The ablated material was deposited onto Si(1 0 0) substrates at various temperatures up to 623 K. The temperature dependence of structure and stoichiometry was investigated by X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). The XRD results show that films grown between 483 and 623 K are obtained as pure phase magnetite with an estimated average crystallite size increasing from 14 to 35 nm, respectively. This is in agreement with the CEMS spectra analysis, indicating isomer shift and internal field values for both the T d and O h sites close to those reported for the bulk material and a random orientation of the magnetic moments. The influence of the deposition temperature on the estimated Fe (9-x)/3 O 4 stoichiometry is related to an increase in the vacancy concentration from 483 to 623 K

Pulsed laser deposition of II-VI and III-V semiconductor materials

Energy Technology Data Exchange (ETDEWEB)

Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica

1998-12-01

Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

Morphology and kinetics of crystals growth in amorphous films of Cr2O3, deposited by laser ablation

Science.gov (United States)

Bagmut, Aleksandr

2018-06-01

An electron microscopic investigation was performed on the structure and kinetics of the crystallization of amorphous Cr2O3 films, deposited by pulsed laser sputtering of chromium target in an oxygen atmosphere. The crystallization was initiated by the action of an electron beam on an amorphous film in the column of a transmission electron microscope. The kinetic curves were plotted on the basis of a frame-by-frame analysis of the video recorded during the crystallization of the film. It was found that the amorphous phase - crystal phase transition in Cr2O3 films occurs as a layer polymorphic crystallization and is characterized by the values of the dimensionless relative length unit δ0 ≈ 2000-3100. The action of the electron beam initiates the formation of crystals of two basic morphological forms: disk-shaped and sickle-shaped. Growth of a disk-shaped crystals is characterized by a constant rate v and the quadratic dependence of the fraction of the crystalline phase x on the time t. Sickle-shaped crystal at an initial stage, as it grows, becomes as ring-shaped and disk-shaped crystal. The growth of a sickle-shaped crystal is characterized by normal and tangential velocity components, which depend on the time as ∼√t and as ∼1/√t respectively The end point of the arc at the interface between the amorphous and crystalline phases as the crystal grows describes a curve, which is similar to the Fermat helix. For sickle-shaped, as well as for disk-shaped crystals, the degree of crystallinity x ∼ t2.

Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

International Nuclear Information System (INIS)

Novotný, M; Bulíř, J; Lančok, J; Čížek, J; Kužel, R; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P; Anwand, W; Brauer, G

2012-01-01

ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ∼ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ∼ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate. (paper)

Time-dependent H-like and He-like Al lines produced by ultra-short pulse laser

Energy Technology Data Exchange (ETDEWEB)

Kato, Takako; Kato, Masatoshi [National Inst. for Fusion Science, Nagoya (Japan); Shepherd, R; Young, B; More, R; Osterheld, Al

1998-03-01

We have performed numerical modeling of time-resolved x-ray spectra from thin foil targets heated by the LLNL Ultra-short pulse (USP) laser. The targets were aluminum foils of thickness ranging from 250 A to 1250 A, heated with 120 fsec pulses of 400 nm light from the USP laser. The laser energy was approximately 0.2 Joules, focused to a 3 micron spot size for a peak intensity near 2 x 10{sup 19} W/cm{sup 2}. Ly{alpha} and He{alpha} lines were recorded using a 900 fsec x-ray streak camera. We calculate the effective ionization, recombination and emission rate coefficients including density effects for H-like and He-like aluminum ions using a collisional radiative model. We calculate time-dependent ion abundances using these effective ionization and recombination rate coefficients. The time-dependent electron temperature and density used in the calculation are based on an analytical model for the hydrodynamic expansion of the target foils. During the laser pulse the target is ionized. After the laser heating stops, the plasma begins to recombine. Using the calculated time dependent ion abundances and the effective emission rate coefficients, we calculate the time dependent Ly{alpha} and He{alpha} lines. The calculations reproduce the main qualitative features of the experimental spectra. (author)

Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition.

Science.gov (United States)

MacLeod, J M; Cojocaru, C V; Ratto, F; Harnagea, C; Bernardi, A; Alonso, M I; Rosei, F

2012-02-17

The combination of nanostenciling with pulsed laser deposition (PLD) provides a flexible, fast approach for patterning the growth of Ge on Si. Within each stencilled site, the morphological evolution of the Ge structures with deposition follows a modified Stranski-Krastanov (SK) growth mode. By systematically varying the PLD parameters (laser repetition rate and number of pulses) on two different substrate orientations (111 and 100), we have observed corresponding changes in growth morphology, strain and elemental composition using scanning electron microscopy, atomic force microscopy and μ-Raman spectroscopy. The growth behaviour is well predicted within a classical SK scheme, although the Si(100) growth exhibits significant relaxation and ripening with increasing coverage. Other novel aspects of the growth include the increased thickness of the wetting layer and the kinetic control of Si/Ge intermixing via the PLD repetition rate.

Fabrication of Nb/Pb structures through ultrashort pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Gontad, Francisco; Lorusso, Antonella, E-mail: antonella.lorusso@le.infn.it; Perrone, Alessio [Dipartimento di Matematica e Fisica “E. De Giorgi,” Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Klini, Argyro; Fotakis, Costas [Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), 100 N. Plastira St., GR 70013 Heraklion, Crete (Greece); Broitman, Esteban [Thin Film Physics Division, IFM, Linköping University, 581-83 Linköping (Sweden)

2016-07-15

This work reports the fabrication of Nb/Pb structures with an application as photocathode devices. The use of relatively low energy densities for the ablation of Nb with ultrashort pulses favors the reduction of droplets during the growth of the film. However, the use of laser fluences in this ablation regime results in a consequent reduction in the average deposition rate. On the other hand, despite the low deposition rate, the films present a superior adherence to the substrate and an excellent coverage of the irregular substrate surface, avoiding the appearance of voids or discontinuities on the film surface. Moreover, the low energy densities used for the ablation favor the growth of nanocrystalline films with a similar crystalline structure to the bulk material. Therefore, the use of low ablation energy densities with ultrashort pulses for the deposition of the Nb thin films allows the growth of very adherent and nanocrystalline films with adequate properties for the fabrication of Nb/Pb structures to be included in superconducting radiofrequency cavities.

Dynamics of a multiple-pulse-driven x-ray laser plasma

International Nuclear Information System (INIS)

Wan, A.S.; Da Silva, L.B.; Moreno, J.C.; Cauble, R.; Celliers, P.; Dalhed, H.E. Jr.; Koch, J.A.; Nilsen, J.

1996-01-01

In this paper we describe experimental and computational studies of multiple-pulse-driven laser plasma, which is the gain medium for a neon-like yttrium x-ray laser. Near-field emission profiles have been measured both with and without reinjection of the x-ray laser photons to couple with the amplifying medium created by later pulses using an external multilayer mirror. From the temporal and spatial evolution of the near-field emission profiles we can examine the pulse-to-pulse variation of the x-ray laser plasma due to changes in the hydrodynamics, laser deposition, and the injecting of x-ray laser photons back into an amplifying x-ray laser plasma. Using a combination of radiation hydrodynamics, atomic kinetics, and ray propagation codes, reasonable agreement has been obtained between simulations and the experimental results. copyright 1996 American Institute of Physics

Novel doped hydroxyapatite thin films obtained by pulsed laser deposition

International Nuclear Information System (INIS)

Duta, L.; Oktar, F.N.; Stan, G.E.; Popescu-Pelin, G.; Serban, N.; Luculescu, C.; Mihailescu, I.N.

2013-01-01

Highlights: ► HA coatings synthesized by pulsed laser deposition. ► Comparative study of commercial vs. animal origin materials. ► HA coatings of animal origin were rougher and more adherent to substrates. ► Animal origin films can be considered as promising candidates for implant coatings. - Abstract: We report on the synthesis of novel ovine and bovine derived hydroxyapatite thin films on titanium substrates by pulsed laser deposition for a new generation of implants. The calcination treatment applied to produce the hydroxyapatite powders from ovine/bovine bones was intended to induce crystallization and to prohibit the transmission of diseases. The deposited films were characterized by scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and energy dispersive X-ray spectroscopy. Pull-off adherence and profilometry measurements were also carried out. X-ray diffraction ascertained the polycrystalline hydroxyapatite nature of the powders and films. Fourier transform infrared spectroscopy evidenced the vibrational bands characteristic to a hydroxyapatite material slightly carbonated. The micrographs of the films showed a uniform distribution of spheroidal particulates with a mean diameter of ∼2 μm. Pull-off measurements demonstrated excellent bonding strength values between the hydroxyapatite films and the titanium substrates. Because of their physical–chemical properties and low cost fabrication from renewable resources, we think that these new coating materials could be considered as a prospective competitor to synthetic hydroxyapatite used for implantology applications.

Spectroscopic studies on diamond like carbon films synthesized by pulsed laser ablation

Energy Technology Data Exchange (ETDEWEB)

Panda, Madhusmita; Krishnan, R., E-mail: krish@igcar.gov.in; Ravindran, T. R.; Das, Arindam; Mangamma, G.; Dash, S.; Tyagi, A. K. [Material Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102, Tamil Nadu (India)

2016-05-23

Hydrogen free Diamond like Carbon (DLC) thin films enriched with C-C sp{sup 3} bonding were grown on Si (111) substrates at laser pulse energies varying from 100 to 400 mJ (DLC-100, DLC-200, DLC-300, DLC-400), by Pulsed Laser Ablation (PLA) utilizing an Nd:YAG laser operating at fundamental wavelength. Structural, optical and morphological evolutions as a function of laser pulse energy were studied by micro Raman, UV-Vis spectroscopic studies and Atomic Force Microscopy (AFM), respectively. Raman spectra analysis provided critical clues for the variation in sp{sup 3} content and optical energy gap. The sp{sup 3} content was estimated using the FWHM of the G peak and found to be in the range of 62-69%. The trend of evolution of sp{sup 3} content matches well with the evolution of I{sub D}/I{sub G} ratio with pulse energy. UV-Vis absorption study of DLC films revealed the variation of optical energy gap with laser pulse energy (1.88 – 2.23 eV), which matches well with the evolution of G-Peak position of the Raman spectra. AFM study revealed that roughness, size and density of particulate in DLC films increase with laser pulse energy.

Multi - pulse tea CO2 laser beam interaction with the TiN thin films

International Nuclear Information System (INIS)

Gakovic, B.; Trtica, M.; Nenadovic, T.; Pavlicevic, B.

1998-01-01

The interaction of various types of energetic beams including a laser beam with the high-hardness coatings is of great fundamental and technological interest. The Nd:YAG, excimer and CO 2 are frequently used laser beams for this purpose. The interaction of a laser beam with low thickness coatings, deposited on austenitic stainless steel, is insufficiently known in the literature. Titanium nitride (TiN) possess the excellent physico-chemical characteristics. For this reason TiN films/coatings are widely used. The purpose of this article is a consideration of the effect of TEA C0 2 laser radiation on the TiN film deposited on austenitic stainless steel substrate (AISI 316). Investigation of TiN morphological changes, after multipulse laser irradiation, shown dependence on laser fluence, number of laser pulses and the laser pulse shape. Subsequently fast heating and cooling during multi-pulse laser bombardment cause the grain growth of TiN layer. Both laser pulses (pulses with tail and tail-free pulses) produced periodical wave like structure on polished substrate material. Periodicity is observed also on AISI 316 protected with TiN layer, but only with laser pulse with tail. (author)

Thin solid films deposited by pulsed laser ablating spray

International Nuclear Information System (INIS)

Song Guangle

2002-01-01

The fabricating technique of thin solid films deposited by pulsed laser ablating spray is a new technique. The background from which it came into being and the process of its evolution were briefly described. According to relative documents, basic principle of the technique was dwelt on. Based on the latest documents, the status quo, including the studying abroad and home, was discussed in detail. The advantages, shortcomings, prospect of its utility, the significance of studying as well as critic problems were summarized. Some proposal was suggested

Defects in zinc oxide grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Ling, Francis C.C., E-mail: ccling@hku.hk [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Wang, Zilan; Ping Ho, Lok; Younas, M. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Anwand, W.; Wagner, A. [Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Su, S.C. [Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631 (China); Shan, C.X. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

2016-01-01

ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discussions of the ZnO/sapphire interface thermal stability, the Zn-vacancy related defects having different microstructures, the origins of the green luminescence (∼2.4–2.5 eV) and the near band edge (NBE) emission at 3.23 eV.

The growth of the metallic ZrNx thin films on P-GaN substrate by pulsed laser deposition

Science.gov (United States)

Gu, Chengyan; Sui, Zhanpeng; Li, Yuxiong; Chu, Haoyu; Ding, Sunan; Zhao, Yanfei; Jiang, Chunping

2018-03-01

Although metal nitride thin films have attractive prospects in plasmonic applications due to its stable properties in harsh environments containing high temperatures, shock, and contaminants, the effect of deposition parameters on the properties of the metallic ZrN grown on III-N semiconductors by pulse laser deposition still lacks of detailed exploration. Here we have successfully prepared metallic ZrNx films on p-GaN substrate by pulsed laser deposition in N2 ambient of various pressures at a fixed substrate temperature (475 °C). It is found that the films exhibit quite smooth surfaces and (111) preferred orientation. The X-ray photoelectron spectroscopy measurements indicate that carbon contamination can be completely removed and oxygen contamination is significantly reduced on the film surfaces after cleaning using Ar+ sputtering. The N/Zr ratio increases from 0.64 to 0.75 when the N2 pressure increases from 0.5 Pa to 3 Pa. The optical reflectivity spectra measured by the UV-vis-NIR spectrophotometer show that the ZrNx is a typical and good metallic-like material and its metallic properties can be tuned with changing the film compositions.

Growth and annealing effect of SrTiO{sub 3} thin films grown by pulsed laser deposition using fourth harmonic Nd:YAG pulsed laser

Energy Technology Data Exchange (ETDEWEB)

Takamura, Koji; Fujiwara, Takumi; Yokota, Akinobu; Nakamura, Motonori; Yoshimoto, Ken' ichi [National Institute of Technology, Asahikawa College, 2-2-1-6 Shunkodai, Asahikawa 071-8142 (Japan)

2017-06-15

SrTiO{sub 3} homoepitaxial films were grown by pulsed laser deposition (PLD) using a fourth harmonic Nd:YAG pulsed laser. The substrate temperature was kept constant at 600, 700, or 800 C. The laser energy was set at 9-25 mJ on the polycrystal SrTiO{sub 3} target. Post-procedure annealing was performed in the air for 24 h. The X-ray diffraction measurement results showed that the lattice constant of the film was only 0.010 Aa larger than that of the substrate and was not dependent on the annealing temperature. We demonstrated the possibility of growing near-stoichiometric SrTiO{sub 3} film by PLD using an Nd:YAG laser. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Pulsed laser deposition of the lysozyme protein: an unexpected “Inverse MAPLE” process

DEFF Research Database (Denmark)

Schou, Jørgen; Matei, Andreea; Constantinescu, Catalin

2012-01-01

Films of organic materials are commonly deposited by laser assisted methods, such as MAPLE (matrix-assisted pulsed laser evaporation), where a few percent of the film material in the target is protected by a light-absorbing volatile matrix. Another possibility is to irradiate the dry organic...... the ejection and deposition of lysozyme. This can be called an “inverse MAPLE” process, since the ratio of “matrix” to film material in the target is 10:90, which is inverse of the typical MAPLE process where the film material is dissolved in the matrix down to several wt.%. Lysozyme is a well-known protein...

Amorphous silicon passivation for 23.3% laser processed back contact solar cells

Science.gov (United States)

Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

2017-08-01

This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

Mo-containing tetrahedral amorphous carbon deposited by dual filtered cathodic vacuum arc with selective pulsed bias voltage

International Nuclear Information System (INIS)

Pasaja, Nitisak; Sansongsiri, Sakon; Intarasiri, Saweat; Vilaithong, Thiraphat; Anders, Andre

2007-01-01

Metal-containing tetrahedral amorphous carbon films were produced by dual filtered cathodic vacuum arc plasma sources operated in sequentially pulsed mode. Negatively pulsed bias was applied to the substrate when carbon plasma was generated, whereas it was absent when the molybdenum plasma was presented. Film thickness was measured after deposition by profilometry. Glass slides with silver pads were used as substrates for the measurement of the sheet resistance. The microstructure and composition of the films were characterized by Raman spectroscopy and Rutherford backscattering, respectively. It was found that the electrical resistivity decreases with an increase of the Mo content, which can be ascribed to an increase of the sp 2 content and an increase of the sp 2 cluster size

Pulsed laser deposition and characterization of multilayer metal-carbon thin films

Energy Technology Data Exchange (ETDEWEB)

Siraj, K., E-mail: khurram.uet@gmail.com [Advance Physics Laboratory, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Khaleeq-ur-Rahman, M.; Rafique, M.S.; Munawar, M.Z. [Advance Physics Laboratory, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Naseem, S.; Riaz, S. [Center for Solid State Physics, University of Punjab, Lahore (Pakistan)

2011-05-15

Cobalt-DLC multilayer films were deposited with increasing content of cobalt, keeping carbon content constant by pulsed laser deposition technique. A cobalt free carbon film was also deposited for comparison. Excimer laser was employed to ablate the materials onto silicon substrate, kept at 250 deg. C, while post-deposition annealing at 400 deg. C was also performed in situ. The formation of cobalt grains within the carbon matrix in Co-DLC films can be seen through scanning electron and atomic force micrographs while no grains on the surface of the cobalt-free DLC film were observed. Raman spectra of all the films show D- and G-bands, which is a confirmation that the films are DLC in nature. According to Vibrating sample magnetometer (VSM) measurements, the DLC films with cobalt revealed ferromagnetic behaviour whereas the cobalt free DLC film exhibited diamagnetic behaviour. The pure DLC film also shows ferromagnetic nature when diamagnetic background is subtracted. Spectroscopic Ellipsometry (SE) analysis showed that the optical band gaps, refractive indices and extinction coefficients of Co-DLC films can be effectively tuned with increasing content of cobalt.

Pulsed laser deposition and characterization of multilayer metal-carbon thin films

International Nuclear Information System (INIS)

Siraj, K.; Khaleeq-ur-Rahman, M.; Rafique, M.S.; Munawar, M.Z.; Naseem, S.; Riaz, S.

2011-01-01

Cobalt-DLC multilayer films were deposited with increasing content of cobalt, keeping carbon content constant by pulsed laser deposition technique. A cobalt free carbon film was also deposited for comparison. Excimer laser was employed to ablate the materials onto silicon substrate, kept at 250 deg. C, while post-deposition annealing at 400 deg. C was also performed in situ. The formation of cobalt grains within the carbon matrix in Co-DLC films can be seen through scanning electron and atomic force micrographs while no grains on the surface of the cobalt-free DLC film were observed. Raman spectra of all the films show D- and G-bands, which is a confirmation that the films are DLC in nature. According to Vibrating sample magnetometer (VSM) measurements, the DLC films with cobalt revealed ferromagnetic behaviour whereas the cobalt free DLC film exhibited diamagnetic behaviour. The pure DLC film also shows ferromagnetic nature when diamagnetic background is subtracted. Spectroscopic Ellipsometry (SE) analysis showed that the optical band gaps, refractive indices and extinction coefficients of Co-DLC films can be effectively tuned with increasing content of cobalt.

Deposition of high Tc superconductor thin films by pulsed excimer laser ablation and their post-synthesis processing

International Nuclear Information System (INIS)

Ogale, S.B.

1992-01-01

This paper describes the use of pulsed excimer laser ablation technique for deposition of high quality superconductor thin films on different substrate materials such as Y stabilized ZrO 2 , SrTiO 3 , LiNbO 3 , Silicon and Stainless Steels, and dopant incorporation during the film depositions. Processing of deposited films using ion and laser beams for realisation of device features are presented. 28 refs., 16 figs

Microstructure evolution in pulsed laser deposited epitaxial Ge-Sb-Te chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

Ross, Ulrich; Lotnyk, Andriy, E-mail: andriy.lotnyk@iom-leipzig.de; Thelander, Erik; Rauschenbach, Bernd

2016-08-15

The thin film deposition and structure of highly oriented telluride compounds is of particular interest for phase-change applications in next-generation non-volatile memory such as heterostructure designs, as well as for the investigation of novel optical, thermoelectric and ferroelectric properties in layered telluride compounds. In this work, epitaxial Ge-Sb-Te thin films were successfully produced by pulsed laser deposition on silicon with and without amorphous SiO{sub x} interlayer at elevated process temperatures from a Ge{sub 2}Sb{sub 2}Te{sub 5} target. Aberration-corrected high-resolution scanning transmission electron microscopy (STEM) imaging reveals a distinct interface configuration of the trigonal phase connected by a quasi van der Waals gap (vacancy) to the Sb/Te-passivated single crystalline Si substrate, yet also an intermediate textured growth regime in which the substrate symmetry is only weakly coupled to the thin film orientation, as well as strong deviation of composition at high deposition temperatures. Textured growth of Ge-Sb-Te thin film was also observed on SiO{sub x}/Si substrate with no evidence of an intermediate Sb/Te surface layer on top of an SiO{sub x} layer. In addition, particular defect structures formed by local reorganization of the stacking sequence across the vacancy gap are observed and appear to be intrinsic to these van der Waals-layered compounds. Theoretical image simulations of preferred stacking sequences can be matched to individual building blocks in the Ge-Sb-Te grain. - Highlights: • Atomic-resolution Cs-corrected STEM imaging of PLD deposited Ge-Sb-Te thin films. • Changing of overall composition with increasing deposition temperature. • Direct imaging of surface passivation Sb/Te layer at the Ge-Sb-Te/Si(111) interface. • The Sb/Te passivation layer is not a prerequisite for highly oriented growth of Ge-Sb-Te thin films.

Study on boron-film thermal neutron converter prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Song Zifeng; Ye Shuzhen; Chen Ziyu; Song Liao; Shen Ji

2011-01-01

The boron film converter used in the position-sensitive thermal neutron detector is discussed and the method of preparing this converter layer via Pulsed Laser Deposition (PLD) is introduced. The morphology and the composition were studied by Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). Both boron and boride existed on the layer surface. It was shown that the energy intensity of laser beam and the substrate temperature both had an important influence on the surface morphology of the film.

Study on boron-film thermal neutron converter prepared by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Song Zifeng; Ye Shuzhen; Chen Ziyu; Song Liao [Department of Modern Physics, University of Science and Technology of China, Anhui Hefei 230026 (China); Shen Ji, E-mail: shenji@ustc.edu.c [Department of Modern Physics, University of Science and Technology of China, Anhui Hefei 230026 (China)

2011-02-15

The boron film converter used in the position-sensitive thermal neutron detector is discussed and the method of preparing this converter layer via Pulsed Laser Deposition (PLD) is introduced. The morphology and the composition were studied by Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). Both boron and boride existed on the layer surface. It was shown that the energy intensity of laser beam and the substrate temperature both had an important influence on the surface morphology of the film.

Fabrication of 100 A class, 1 m long coated conductor tapes by metal organic chemical vapor deposition and pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Selvamanickam, V.; Lee, H.G.; Li, Y.; Xiong, X.; Qiao, Y.; Reeves, J.; Xie, Y.; Knoll, A.; Lenseth, K

2003-10-15

SuperPower has been scaling up YBa{sub 2}Cu{sub 3}O{sub x}-based second-generation superconducting tapes by techniques such as pulsed laser deposition (PLD) using industrial laser and metal organic chemical vapor deposition (MOCVD). Both techniques offer advantage of high deposition rates, which is important for high throughput. Using highly-polished substrates produced in a reel-to-reel polishing facility and buffer layers deposited in a pilot ion beam assisted deposition facility, meter-long second-generation high temperature superconductor tapes have been produced. 100 A class, meter-long coated conductor tapes have been reproducibly demonstrated in this work by both MOCVD and PLD. The best results to date are 148 A over 1.06 m by MOCVD and 135 A over 1.1 m by PLD using industrial laser.

Epitaxial growth of indium oxyfluoride thin films by reactive pulsed laser deposition: Structural change induced by fluorine insertion into vacancy sites in bixbyite structure

International Nuclear Information System (INIS)

Okazaki, Sohei; Hirose, Yasushi; Nakao, Shoichiro; Yang, Chang; Harayama, Isao; Sekiba, Daiichiro; Hasegawa, Tetsuya

2014-01-01

InO x F y thin films were epitaxially grown on Y-stabilized ZrO 2 (111) substrates by reactive pulsed laser deposition. By changing the substrate temperature (T S ), we were able to control the fluorine content of the film. Phase-pure epitaxial thin films with bixbyite-like ordering in the anion-site occupancy were obtained at high T S (≥ 240 °C), where fluorine was inserted into the vacancy sites in the bixbyite lattice up to y / (x + y) ∼ 0.3. By decreasing T S , y / (x + y) increased and the bixbyite-like ordering disappeared; simultaneously, fluorine-rich and fluorine-poor subphases emerged. The films grown at T S ≤ 150 °C were amorphous and exhibited higher optical absorbance and electrical resistivity than the epitaxial films. - Highlights: • InO x F y epitaxial thin films with high fluorine concentration were grown on Y:ZrO 2 . • Anion composition and structural, optical and transport properties were studied. • Fluorine is topotactically inserted into the oxygen vacancy sites in bixbyite cell. • Bixbyite-like ordering of the anion site occupancy was conserved in y / (x + y) ≤ ∼ 0.3

Surface electronic and structural properties of nanostructured titanium oxide grown by pulsed laser deposition

NARCIS (Netherlands)

Fusi, M.; Maccallini, E.; Caruso, T.; Casari, C. S.; Bassi, A. Li; Bottani, C. E.; Rudolf, P.; Prince, K. C.; Agostino, R. G.

Titanium oxide nanostructured thin films synthesized by pulsed laser deposition (PLD) were here characterized with a multi-technique approach to investigate the relation between surface electronic, structural and morphological properties. Depending on the growth parameters, these films present

Models of WO x films growth during pulsed laser deposition at elevated pressures of reactive gas

Science.gov (United States)

Gnedovets, A. G.; Fominski, V. Y.; Nevolin, V. N.; Romanov, R. I.; Fominski, D. V.; Soloviev, A. A.

2017-12-01

The films of tungsten oxides were prepared by pulsed laser ablation of W target in a reactive gas atmosphere (air of laboratory humidity). Optical analysis and ion signal measurements for the laser plume allowed to recognise a threshold gas pressure that suppresses the deposition of non-scattered atomic flux from the plume. When the pressure exceeds about 40 Pa, the films grow due to the deposition of species that could be formed in collisions of W atoms with reactive molecules (e.g., O2). Kinetic Monte Carlo method was used for modelling film growth. Comparison of the model structures with the experimentally prepared films has shown that the growth mechanism of ballistic deposition at a pressure of 40 Pa could be changed on the diffusion limited aggregation at a pressure of ~100 Pa. Thus, a cauliflower structure of the film transformed to a web-like structure. For good correlation of experimental and model structures of WO x , a dimension of structural elements in the model should coincide with W-O cluster size.

Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

DEFF Research Database (Denmark)

Bodea, M. A.; Sbarcea, G.; Naik, G. V.

2013-01-01

Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass...

Pulsed Laser deposition of Al2O3 thin film on silicon

International Nuclear Information System (INIS)

Lamagna, A.; Duhalde, S.; Correra, L.; Nicoletti, S.

1998-01-01

Al 2 O 3 thin films were fabricated by pulsed laser deposition (PLD) on Si 3 N 4 /Si, to improve the thermal and electrical isolation of gas sensing devices. The microstructure of the films is analysed as a function of the deposition conditions (laser fluence, oxygen pressure, target-substrate distance and substrate temperature). X-ray analysis shows that only a sharp peak that coincides with the corundum (116) reflection can be observed in all the films. But, when they are annealed at temperatures above 1,200 degree centigrade, a change in the crystalline structure of some films occurs. The stoichiometry and morphology of the films with and without thermal treatment are compared using environmental scanning electron microscopy (SEM) and EDAX analysis. (Author) 14 refs

SERS activity of silver and gold nanostructured thin films deposited by pulsed laser ablation

Science.gov (United States)

Agarwal, N. R.; Tommasini, M.; Fazio, E.; Neri, F.; Ponterio, R. C.; Trusso, S.; Ossi, P. M.

2014-10-01

Nanostructured Au and Ag thin films were obtained by nanosecond pulsed laser ablation in presence of a controlled Ar atmosphere. Keeping constant other deposition parameters such as target-to-substrate distance, incidence angle, laser wavelength and laser fluence, the film morphology, revealed by SEM, ranges from isolated NPs to island structures and sensibly depends on gas pressure (10-100 Pa) and on the laser pulse number (500-3 × 10). The control of these two parameters allows tailoring the morphology and correspondingly the optical properties of the films. The position and width of the surface plasmon resonance peak, in fact, can be varied with continuity. The films showed remarkable surface-enhanced Raman activity (SERS) that depends on the adopted deposition conditions. Raman maps were acquired on micrometer-sized areas of both silver and gold substrates selected among those with the strongest SERS activity. Organic dyes of interest in cultural heritage studies (alizarin, purpurin) have been also considered for bench marking the substrates produced in this work. Also the ability to detect the presence of biomolecules was tested using lysozyme in a label free configuration.

The flip-over effect in pulsed laser deposition: Is it relevant at high background gas pressures?

Science.gov (United States)

Ojeda-G-P, Alejandro; Schneider, Christof W.; Döbeli, Max; Lippert, Thomas; Wokaun, Alexander

2015-12-01

In pulsed laser deposition the use of a rectangular or elliptical beam spot with a non 1:1 aspect ratio leads to the so called flip-over effect. Here, the longest dimension of the laser spot results in the shortest direction of plasma plume expansion. This effect has been mainly reported for vacuum depositions of single element targets and is particularly noticeable when the aspect ratio of the beam spot is large. We investigate the flip-over effect in vacuum and at three relevant background-gas pressures for pulsed laser deposition using a La0.4Ca0.6MnO3 target by measuring the thickness dependence of the deposited material as a function of angle. The film thicknesses and compositions are determined by Rutherford backscattering and argon is used to reduce the influence of additional chemical reactions in the plasma. The results show the prevalence of the flip-over effect for all pressures except for the highest, i.e. 1 × 10-1 mbar, where the film thickness is constant for all angles. The composition profiles show noticeable compositional variations of up to 30% with respect to the target material depending on the background gas pressure, the angular location, and the laser spot dimensions.

Pulsed Laser Deposition of BaTiO3 Thin Films on Different Substrates

Directory of Open Access Journals (Sweden)

Yaodong Yang

2010-01-01

Full Text Available We have studied the deposition of BaTiO3 (BTO thin films on various substrates. Three representative substrates were selected from different types of material systems: (i SrTiO3 single crystals as a typical oxide, (ii Si wafers as a semiconductor, and (iii Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.

Structural and optical properties of pulse laser deposited Ag2O thin films

Science.gov (United States)

Agasti, Souvik; Dewasi, Avijit; Mitra, Anirban

2018-05-01

We deposited Ag2O films in PLD system on glass substrate for a fixed partial oxygen gas pressure (70 mili Torr) and, with a variation of laser energy from 75 to 215 mJ/Pulse. The XRD patterns confirm that the films have well crystallinity and deposited as hexagonal lattice. The FESEM images show that the particle size of the films increased from 34.84 nm to 65.83 nm. The composition of the films is analyzed from EDX spectra which show that the percentage of oxygen increased by the increment of laser energy. From the optical characterization, it is observed that the optical band gap appears in the visible optical range in an increasing order from 0.87 to 0.98 eV with the increment of laser energy.

Deposit of thin films of nitrided amorphous carbon using the laser ablation technique

International Nuclear Information System (INIS)

Rebollo, P.B.; Escobar A, L.; Camps C, E.; Haro P, E.; Camacho L, M.A.; Muhl S, S.

2000-01-01

It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 -4 Torr until 7.5 x 10 -2 Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition

International Nuclear Information System (INIS)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K.; Lee, W. J.; Shin, B. C.; Cho, C. R.

2014-01-01

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al 2 O 3 dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al 2 O 3 and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al 2 O 3 gate dielectric exhibits a very low leakage current density of 1.3 x 10 -8 A/cm 2 at 5 V and a high capacitance density of 60.9 nF/cm 2 . The IGZO TFT with a structure of Ni/IGZO/Al 2 O 3 /Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm 2 V -1 s -1 , an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10 7 .

Comparison of optical transients during the picosecond laser pulse-induced crystallization of GeSbTe and AgInSbTe phase-change thin films: Nucleation-driven versus growth-driven processes

Energy Technology Data Exchange (ETDEWEB)

Liang, Guangfei [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, Simian [State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yat-Sen University, Guangzhou 510275 (China); Huang, Huan [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Wang, Yang, E-mail: ywang@siom.ac.cn [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Lai, Tianshu, E-mail: stslts@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yat-Sen University, Guangzhou 510275 (China); Wu, Yiqun [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

2013-09-01

Direct comparison of the real-time in-situ crystallization behavior of as-deposited amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} (GeSbTe) and Ag{sub 8}In{sub 14}Sb{sub 55}Te{sub 23} (AgInSbTe) phase-change thin films driven by picosecond laser pulses was performed by a time-resolved optical pump-probe technique with nanosecond resolution. Different optical transients showed various crystallization processes because of the dissimilar nucleation- and growth-dominated mechanisms of the two materials. The effects of laser pulse fluence, thermal conductive structure, and successive pulse irradiation on their crystallization dynamics were also discussed. A schematic was then established to describe the different crystallization processes beginning from the as-deposited amorphous state. The results may provide further insight into the phase-change mechanism under extra-non-equilibrium conditions and aid the development of ultrafast phase-change memory materials.

Structural and magnetic properties of Gd/Fe multilayers grown by pulsed laser deposition

DEFF Research Database (Denmark)

Kant, K. Mohan; Bahl, Christian Robert Haffenden; Pryds, Nini

2010-01-01

This work investigates the structural and the magnetic properties of Gd/Fe multilayered thin films grown by pulsed laser deposition onto Si (001) substrates at room temperature. he Fe layer thickness is varied from 70 to 150 nm and its effect on the structural and magnetic properties of Fe/Gd/Fe ...

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

Science.gov (United States)

Torgovkin, A.; Chaudhuri, S.; Ruhtinas, A.; Lahtinen, M.; Sajavaara, T.; Maasilta, I. J.

2018-05-01

Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.

The minimum amount of "matrix " needed for matrix-assisted pulsed laser deposition of biomolecules

DEFF Research Database (Denmark)

Tabetah, Marshall; Matei, Andreea; Constantinescu, Catalin

2014-01-01

The ability of matrix-assisted pulsed laser evaporation (MAPLE) technique to transfer and deposit high-quality thin organic, bioorganic, and composite films with minimum chemical modification of the target material has been utilized in numerous applications. One of the outstanding problems in MAPLE...

Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization

Directory of Open Access Journals (Sweden)

M. C. Onbasli

2014-10-01

Full Text Available Yttrium iron garnet (YIG, Y 3Fe5O12 films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd3Ga5O12 substrates with (100 orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe, near-bulk room temperature saturation moments (∼135 emu cm−3, in-plane easy axis, and damping parameters as low as 2.2 × 10−4. These high quality YIG thin films are useful in the investigation of the origins of novel magnetic phenomena and magnetization dynamics.

Au nanostructure fabrication by pulsed laser deposition in open air: Influence of the deposition geometry

Directory of Open Access Journals (Sweden)

Rumen G. Nikov

2017-11-01

Full Text Available We present a fast and flexible method for the fabrication of Au nanocolumns. Au nanostructures were produced by pulsed laser deposition in air at atmospheric pressure. No impurities or Au compounds were detected in the resulting samples. The nanoparticles and nanoaggregates produced in the ablated plasma at atmospheric pressure led to the formation of chain-like nanostructures on the substrate. The dependence of the surface morphology of the samples on the deposition geometry used in the experimental set up was studied. Nanocolumns of different size and density were produced by varying the angle between the plasma plume and the substrate. The electrical, optical, and hydrophobic properties of the samples were studied and discussed in relation to their morphology. All of the nanostructures were conductive, with conductivity increasing with the accumulation of ablated material on the substrate. The modification of the electrical properties of the nanostructures was demonstrated by irradiation by infrared light. The Au nanostructures fabricated by the proposed technology are difficult to prepare by other methods, which makes the simple implementation and realization in ambient conditions presented in this work more ideal for industrial applications.

Au nanostructure fabrication by pulsed laser deposition in open air: Influence of the deposition geometry.

Science.gov (United States)

Nikov, Rumen G; Dikovska, Anna Og; Nedyalkov, Nikolay N; Avdeev, Georgi V; Atanasov, Petar A

2017-01-01

We present a fast and flexible method for the fabrication of Au nanocolumns. Au nanostructures were produced by pulsed laser deposition in air at atmospheric pressure. No impurities or Au compounds were detected in the resulting samples. The nanoparticles and nanoaggregates produced in the ablated plasma at atmospheric pressure led to the formation of chain-like nanostructures on the substrate. The dependence of the surface morphology of the samples on the deposition geometry used in the experimental set up was studied. Nanocolumns of different size and density were produced by varying the angle between the plasma plume and the substrate. The electrical, optical, and hydrophobic properties of the samples were studied and discussed in relation to their morphology. All of the nanostructures were conductive, with conductivity increasing with the accumulation of ablated material on the substrate. The modification of the electrical properties of the nanostructures was demonstrated by irradiation by infrared light. The Au nanostructures fabricated by the proposed technology are difficult to prepare by other methods, which makes the simple implementation and realization in ambient conditions presented in this work more ideal for industrial applications.

Study of titania nanorod films deposited by matrix-assisted pulsed laser evaporation as a function of laser fluence

Science.gov (United States)

Caricato, A. P.; Belviso, M. R.; Catalano, M.; Cesaria, M.; Cozzoli, P. D.; Luches, A.; Manera, M. G.; Martino, M.; Rella, R.; Taurino, A.

2011-11-01

Chemically synthesized brookite titanium dioxide (TiO2) nanorods with average diameter and length dimensions of 3-4 nm and 35-50 nm, respectively, were deposited by the matrix-assisted pulsed laser evaporation technique. A toluene nanorod solution was frozen at the liquid-nitrogen temperature and irradiated with a KrF excimer laser ( λ=248 nm, τ=20 ns) at the repetition rate of 10 Hz, at different fluences (25 to 350 mJ/cm2). The deposited films were structurally characterized by high-resolution scanning and transmission electron microscopy. single-crystal Si wafers and carbon-coated Cu grids were used as substrates. Structural analyses evidenced the occurrence of brookite-phase crystalline nanospheres coexisting with individually distinguishable TiO2 nanorods in the films deposited at fluences varying from 50 to 350 mJ/cm2. Nanostructured TiO2 films comprising only nanorods were deposited by lowering the laser fluence to 25 mJ/cm2. The observed shape and phase transitions of the nanorods are discussed taking into account the laser-induced heating effects, reduced melting temperature and size-dependent thermodynamic stability of nanoscale TiO2.

Nanostructured high valence silver oxide produced by pulsed laser deposition

International Nuclear Information System (INIS)

Dellasega, D.; Facibeni, A.; Di Fonzo, F.; Russo, V.; Conti, C.; Ducati, C.; Casari, C.S.; Li Bassi, A.; Bottani, C.E.

2009-01-01

Among silver oxides, Ag 4 O 4 , i.e. high valence Ag(I)Ag(III) oxide, is interesting for applications in high energy batteries and for the development of antimicrobial coatings. We here show that ns UV pulsed laser deposition (PLD) in an oxygen containing atmosphere allows the synthesis of pure Ag 4 O 4 nanocrystalline thin films, permitting at the same time to control the morphology of the material at the sub-micrometer scale. Ag 4 O 4 films with a crystalline domain size of the order of tens of nm can be deposited provided the deposition pressure is above a threshold (roughly 4 Pa pure O 2 or 20 Pa synthetic air). The formation of this particular high valence silver oxide is explained in terms of the reactions occurring during the expansion of the ablated species in the reactive atmosphere. In particular, expansion of the PLD plasma plume is accompanied by formation of low stability Ag-O dimers and atomic oxygen, providing reactive species at the substrate where the film grows. Evidence of reactive collisions in the expanding ablation plume is obtained by analysis of the plume visible shape in inert and reactive atmospheres. In addition, we show how the dimensionless deposition parameter L, relating the target-to-substrate distance to the ablation plume maximum expansion length, can be used to classify different growth regimes. It is thus possible to vary the stoichiometry and the morphology of the films, from compact and columnar to foam-like, by controlling both the gas pressure and the target-to-substrate distance

Pulsed laser deposition of HfO{sub 2} thin films on indium zinc oxide: Band offsets measurements

Energy Technology Data Exchange (ETDEWEB)

Craciun, D.; Craciun, V., E-mail: valentin.craciun@inflpr.ro

2017-04-01

Highlights: • High quality amorphous IZO and HfO{sub 2} films were obtained by PLD technique. • XPS measurements were used to obtain the valence band alignment in HfO{sub 2}/IZO heterostructure. • A valence band offset (ΔE{sub V}) of 1.75 eV was obtained for the HfO{sub 2}/IZO heterostructure. • A conduction band offset (ΔE{sub C}) of 0.65 eV was estimated for the HfO{sub 2}/IZO heterostructure. - Abstract: One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO{sub 2}. The estimation of the valence band discontinuity (ΔE{sub V}) of HfO{sub 2}/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO{sub 2} film deposited on a thick IZO film. A value of ΔE{sub V} = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO{sub 2} and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔE{sub C} = 0.65 ± 0.05 eV in HfO{sub 2}/IZO heterostructure was then obtained.

Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition

International Nuclear Information System (INIS)

Shin, Byungha; Aziz, Michael J.

2007-01-01

We have isolated the effect of kinetic energy of depositing species from the effect of flux pulsing during pulsed-laser deposition (PLD) on surface morphology evolution of Ge(001) homoepitaxy at low temperature (100 deg. C). Using a dual molecular beam epitaxy (MBE) PLD chamber, we compare morphology evolution from three different growth methods under identical experimental conditions except for the differing nature of the depositing flux: (a) PLD with average kinetic energy 300 eV (PLD-KE); (b) PLD with suppressed kinetic energy comparable to thermal evaporation energy (PLD-TH); and (c) MBE. The thicknesses at which epitaxial breakdown occurs are ranked in the order PLD-KE>MBE>PLD-TH; additionally, the surface is smoother in PLD-KE than in MBE. The surface roughness of the films grown by PLD-TH cannot be compared due to the early epitaxial breakdown. These results demonstrate convincingly that kinetic energy is more important than flux pulsing in the enhancement of epitaxial growth, i.e., the reduction in roughness and the delay of epitaxial breakdown

The flip-over effect in pulsed laser deposition: Is it relevant at high background gas pressures?

International Nuclear Information System (INIS)

Ojeda-G-P, Alejandro; Schneider, Christof W.; Döbeli, Max; Lippert, Thomas; Wokaun, Alexander

2015-01-01

Highlights: • The flip-over effect in PLD is observed up to high deposition pressures. • Consistent congruent transfer of the target composition is generally not correct. • The choice of deposition pressure can change the film composition strongly. • Large compositional changes appear at high off-axis angles and large spot sizes. - Abstract: In pulsed laser deposition the use of a rectangular or elliptical beam spot with a non 1:1 aspect ratio leads to the so called flip-over effect. Here, the longest dimension of the laser spot results in the shortest direction of plasma plume expansion. This effect has been mainly reported for vacuum depositions of single element targets and is particularly noticeable when the aspect ratio of the beam spot is large. We investigate the flip-over effect in vacuum and at three relevant background-gas pressures for pulsed laser deposition using a La 0.4 Ca 0.6 MnO 3 target by measuring the thickness dependence of the deposited material as a function of angle. The film thicknesses and compositions are determined by Rutherford backscattering and argon is used to reduce the influence of additional chemical reactions in the plasma. The results show the prevalence of the flip-over effect for all pressures except for the highest, i.e. 1 × 10 −1 mbar, where the film thickness is constant for all angles. The composition profiles show noticeable compositional variations of up to 30% with respect to the target material depending on the background gas pressure, the angular location, and the laser spot dimensions.

Spectroscopic and imaging diagnostics of pulsed laser deposition laser plasmas

International Nuclear Information System (INIS)

Thareja, Raj K.

2002-01-01

An overview of laser spectroscopic techniques used in the diagnostics of laser ablated plumes used for thin film deposition is given. An emerging laser spectroscopic imaging technique for the laser ablation material processing is discussed. (author)

Heating effect of substrate of pulsed laser ablation deposition technique towards the orientation of carbon microstructure

International Nuclear Information System (INIS)

Choy, L.S.; Irmawati Ramli; Noorhana Yahya; Abdul Halim Shaari

2009-01-01

Full text: Carbon thin film has been successfully deposited by second harmonic Nd:YAG pulsed laser ablation deposition, PLAD. The topology and morphology of the deposited layers was studied by scanning electron microscopy (SEM) whereas emission dispersion X-ray (EDX) was used to determine the existence of elements that constitutes the microstructure. Substrate heated at 500 degree Celsius during the laser ablation showed the most homogenous lollipop microstructure as compared to mainly pillars of microstructure ablated at lower substrate temperature. It is found that this also avoid further diffusion of carbon into catalyst in forming iron carbide. (author)

Pulsed laser deposition of ITO thin films and their characteristics

International Nuclear Information System (INIS)

Zuev, D. A.; Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Khramova, O. D.; Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A. N.; Rumyanzeva, M. N.; Gaskov, A. M.

2012-01-01

The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 × 10 −4 Ω cm has been achieved in the ITO films with content of Sn 5 at %.

Low-temperature processed ZnO and CdS photodetectors deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Moreno, S; Mejia, I; Quevedo-Lopez, M A

2014-01-01

UV-VIS photodetectors using an interdigital configuration, with zinc oxide (ZnO) and cadmium sulfide (CdS) semiconductors deposited by pulsed laser deposition, were fabricated with a maximum processing temperature of 100 °C. Without any further post-growth annealing, the photodetectors are compatible with flexible and transparent substrates. Aluminum (Al) and indium tin oxide (ITO) were investigated as contacts. Focusing on underwater communications, the impact of metal contact (ITO versus Al) was investigated to determine the maximum responsivity using a laser with a 405 nm wavelength. As expected, the responsivity increases for reduced metal finger separation. This is a consequence of reduced carrier transit time for shorter finger separation. For ITO, the highest responsivities for both films (ZnO and CdS) were ∼3 A W −1 at 5 V. On the other hand, for Al contacts, the maximum responsivities at 5 V were ∼0.1 A W −1 and 0.7 A W −1 for CdS and ZnO, respectively. (paper)

Parametric study of self-forming ZnO Nanowall network with honeycomb structure by Pulsed Laser Deposition

KAUST Repository

El Zein, B.

2014-02-01

The successful synthesis of catalyst free zinc oxide (ZnO) Nanowall networks with honeycomb like structure by Pulsed Laser Deposition (PLD) is demonstrated in this paper. The synthesis was conducted directly on Silicon (Si) (1 0 0) and Glass-ITO substrates without the intermediate of metal catalyst, template or chemical etching. Kinetic of growth and effects of gas pressure and substrate temperature were studied by depositing ZnO films on P type Si (1 0 0) substrates with different deposition parameters. The optimized growth parameters were found as: 10 mTorr oxygen pressure, 600 C substrate temperature, and deposition duration equal or higher than 10 min. X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Photoluminescence (PL) measurements were used to investigate structural, microstructural and optical properties of ZnO Nanowall networks produced. They exhibit a non-uniform size high quality honeycomb structure with low deep level defects. © 2013 Elsevier B.V.

ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

Energy Technology Data Exchange (ETDEWEB)

Krämer, André; Engel, Sebastian [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Sangiorgi, Nicola [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Department of Chemical Science and Technologies, University of Rome Tor Vergata, via della Ricerca Scientifica, 00133 Rome (Italy); Sanson, Alessandra [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Bartolomé, Jose F. [Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), C/Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Gräf, Stephan, E-mail: stephan.graef@uni-jena.de [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Müller, Frank A. [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena (Germany)

2017-03-31

Highlights: • Carbon fibres were entirely coated with thin films consisting of aligned ZnO crystals. • A Q-switched CO2 laser was utilised as radiation source. • Suitability of ZnO thin films on carbon fibres as photo anodes for DSSC was studied. - Abstract: Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO{sub 2} laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency f{sub rep} = 800 Hz and a peak power P{sub peak} = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I–V measurements were performed.

Control of wettability of hydrogenated amorphous carbon thin films by laser-assisted micro- and nanostructuring

International Nuclear Information System (INIS)

Pfleging, Wilhelm; Kohler, Robert; Torge, Maika; Trouillet, Vanessa; Danneil, Friederike; Stueber, Michael

2011-01-01

A flexible and rapid surface functionalization of amorphous carbon films shows a great potential for various application fields such as biological surfaces and tribological systems. For this purpose, the combination of thin film deposition and subsequent laser material processing was investigated. Amorphous carbon layers doped with hydrogen were deposited on silicon wafers by reactive direct-current magnetron sputtering. Films with three different hydrogen contents were synthesized. Subsequent to the thin film deposition process, UV laser material processing at wavelengths of 193 nm or 248 nm was performed with respect to chemical surface modification and surface structuring on micro- and nanometer scale. Depending on structure size and laser-induced chemical surface modification the adjustment of the surface energy and wetting behaviour in a broad range from hydrophobic to hydrophilic was possible. The chemical modification and the ablation mechanisms near the ablation threshold were strongly influenced by the hydrogen content in amorphous carbon thin films. Structural and chemical information of the as-deposited and modified films was obtained by Raman spectroscopy, X-ray photoelectron spectroscopy and contact angle measurements.

Enhancement of coercivity with reduced grain size in CoCrPt film grown by pulsed laser deposition

International Nuclear Information System (INIS)

Liang, Q.; Hu, X.F.; Li, H.Q.; He, X.X.; Wang, Xiaoru; Zhang, W.

2006-01-01

We report a pulsed laser deposition (PLD) growth of VMn/CoCrPt bilayer with a magnetic coercivity (H c ) of 2.2 kOe and a grain size of 12 nm. The effects of VMn underlayer on magnetic properties of CoCrPt layer were studied. The coercivity, H c , and squareness, S, of VMn/CoCrPt bilayer, is dependent on the thickness of VMn. The grain size of the CoCrPt film can also be modified by laser parameters. High laser fluence used for CoCrPt deposition produces a smaller grain size. Enhanced H c and reduced grain size in VMn/CoCrPt is explained by more pronounced surface phase segregation during deposition at high laser fluence

Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

CERN Document Server

Despeisse, M; Commichau, S C; Dissertori, G; Garrigos, A; Jarron, P; Miazza, C; Moraes, D; Shah, A; Wyrsch, N; Viertel, Gert M; 10.1016/j.nima.2003.11.022

2004-01-01

We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30mum thick a-Si:H films deposited on top of an ASIC containing a linear array of high- speed low-noise transimpedance amplifiers designed in a 0.25mum CMOS technology. Experimental results presented have been obtained with a 600nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed.

High Quality Zinc Oxide Thin films and Nanostructures Prepared by Pulsed Laser Deposition for Photodetectors

KAUST Repository

Flemban, Tahani H.

2017-01-01

is attributed to defect/impurity bands mediated by Gd dopants. In this dissertation, I study the effects of Gd concentration, oxygen pressure using pulsed laser deposition (PLD), and thermal annealing on the optical and structural properties of undoped and Gd

Pulsed laser deposition of nanostructured Co-B-O thin films as efficient catalyst for hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Jadhav, H., E-mail: jadhav.hs2013@gmail.com [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Singh, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Patel, N.; Fernandes, R.; Gupta, S.; Kothari, D.C. [Department of Physics and National Centre for Nanosciences & Nanotechnology, University of Mumbai, Vidyanagari, Santacruz (E), Mumbai 400098 (India); Miotello, A. [Dipartimento di Fisica, Università degli Studi di Trento, I-38123 Povo, Trento (Italy); Sinha, S. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

2016-11-30

Highlights: • Pulsed laser deposition was used to deposit Co-B-O film nanocatalyst. • Co-B-O NPs are well separated, stable and immobilized on film surface. • Catalytic H{sub 2} production was studied by hydrolysis of Sodium Borohydride. • Four times higher H{sub 2} production rate was recorded for Co-B-O film than Co-B-O powder. • High particle density, polycrystalline nature and good stability against agglomeration of Co NPs. - Abstract: Nanoparticles assembled Co-B-O thin film catalysts were synthesized by pulsed laser deposition (PLD) technique for hydrolysis of Sodium Borohydride (SBH). Surface morphology of the deposited films was investigated using SEM and TEM, while compositional analysis was studied using XPS. Structural properties of Co-B-O films were examined using XRD and HRTEM. Laser process is able to produce well separated and immobilized Co-B-O NPs on the film surface which act as active centers leading to superior catalytic activity producing hydrogen at a significantly higher rate as compared to bulk powder. Co-B-O thin film catalyst produces hydrogen at a maximum rate of ∼4400 ml min{sup −1} g{sup −1} of catalyst, which is four times higher than powder catalyst. PLD parameters such as laser fluence and substrate-target distance were varied during deposition in order to understand the role of size and density of the immobilized Co-B-O NPs in the catalytic process. Films deposited at 3–5 cm substrate-target distance showed better performance than that deposited at 6 cm, mainly on account of the higher density of active Co-B-O NPs on the films surface. Features such as high particle density, polycrystalline nature of Co NPs and good stability against agglomeration mainly contribute towards the superior catalytic activity of Co-B-O films deposited by PLD.

Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

DEFF Research Database (Denmark)

Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

the preparation of ultrathin seed layers in the first stage of the deposition process is often envisaged to control the growth and physical properties of the subsequent coating. This work suggests that the limitations of conventional pulsed laser deposition (PLD), performed at moderate temperature (400°C......10 layers with a thickness of 4 nm, 13 nm and 22 nm, respectively, grown on Mg(100), were studied by atomic force microscopy and X-ray reflectometry....

La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films deposited by pulsed laser ablation for spintronic applications

Energy Technology Data Exchange (ETDEWEB)

Martino, Maurizio; Cesaria, Maura; Caricato, Anna Paola [Physics Department, University of Salento, Via Arnesano, 73100 Lecce (Italy); Maruccio, Giuseppe [Physics Department, University of Salento, Via Arnesano, 73100 Lecce (Italy); NNL CNR-Istituto di Nanoscienze, Via Arnesano, 73100 Lecce (Italy); Cola, Adriano; Farella, Isabella [Institute for Microelectronics and Microsystems, IMM-CNR, 73100 Lecce (Italy)

2011-08-15

Among spintronic materials, mixed-valence manganite La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) is widely investigated due to its half-metal nature. LSMO thin films were grown by pulsed laser deposition (PLD) onto amorphous silica substrates heated at nearly 600 C. An ArF excimer laser was chosen to induce ablation due to its more energetic photons compared to the other quoted excimer laser sources. Different oxygen pressures were considered in order to study the influence of oxygen on the LSMO optical and electrical properties. In this respect, the visible transparency percentage of the deposited films is found good enough for spin-OLED applications. The absorption coefficient shows an absorption band tunable as a function of the oxygen content. Its energetic location and evolution with the oxygen content demonstrate it originates from radiative transitions between the spin-majority bands separated by the Jahn-Teller distortion. All of this lets relate the deposition oxygen pressure to the Mn{sup 3+} ion content in each film and interpret electrical data. The 200 and 100 nm thick samples exhibit weak metallic transport behavior at room temperature with a resistivity of 4.8 and 6.9 {omega} cm, respectively. Concerning the resistivity response versus temperature, the measured low metal-insulator transition temperature (150 K) is related to the sample structural features as involved by the depositions. Two different transport mechanisms describe the conductivity regime of the deposited samples, namely the small polaron variable range hopping (VRH) and the Arrhenius law. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

KAUST Repository

Sarath Kumar, S. R.

2013-11-07

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

Pulsed laser deposition of SiC thin films at medium substrate temperatures

International Nuclear Information System (INIS)

Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

2008-01-01

Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

Pulsed-laser ablation of co-deposits on JT-60 graphite tile

International Nuclear Information System (INIS)

Sakawa, Youichi; Watanabe, Daisuke; Shibahara, Takahiro; Sugiyama, Kazuyoshi; Tanabe, Tetsuo

2007-01-01

Pulsed laser ablation of the co-deposits on a JT-60 open-divertor tile using the fourth harmonic of a 20 ps-Nd: YAG laser has been investigated. With increasing the laser intensity, three regions, non-ablation region (NAR), weak-ablation region (WAR), and strong-ablation region (SAR) were distinguished. Transition from NAR to WAR and WAR to SAR occurred at the threshold laser intensity for laser ablation and that for strong ionization of carbon atoms, respectively. The ablation accompanied desorption of H 2 and C 2 H 2 , with minor contribution of other hydrocarbons, while production of H 2 O was small. In NAR and WAR the number of the hydrogen desorbed by the laser irradiation was less than that of hydrogen retained in the ablated volume, while in SAR it was much larger, owing to thermal desorption of hydrogen gas from the region surrounding the ablated volume. For the ablative removal of hydrogen isotopes, SAR is more desirable because of higher removal efficiency and less production of hydrocarbons

Pulsed-laser ablation of co-deposits on JT-60 graphite tile

Energy Technology Data Exchange (ETDEWEB)

Sakawa, Youichi [Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, Osaka 565-0871 (Japan)]. E-mail: sakawa-y@ile.osaka-u.ac.jp; Watanabe, Daisuke [Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Shibahara, Takahiro [Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Sugiyama, Kazuyoshi [Interdisciplinary School of Engineering Science, Kyushu University, Fukuoka, Fukuoka 812-8581 (Japan); Tanabe, Tetsuo [Interdisciplinary School of Engineering Science, Kyushu University, Fukuoka, Fukuoka 812-8581 (Japan)

2007-08-01

Pulsed laser ablation of the co-deposits on a JT-60 open-divertor tile using the fourth harmonic of a 20 ps-Nd: YAG laser has been investigated. With increasing the laser intensity, three regions, non-ablation region (NAR), weak-ablation region (WAR), and strong-ablation region (SAR) were distinguished. Transition from NAR to WAR and WAR to SAR occurred at the threshold laser intensity for laser ablation and that for strong ionization of carbon atoms, respectively. The ablation accompanied desorption of H{sub 2} and C{sub 2}H{sub 2}, with minor contribution of other hydrocarbons, while production of H{sub 2}O was small. In NAR and WAR the number of the hydrogen desorbed by the laser irradiation was less than that of hydrogen retained in the ablated volume, while in SAR it was much larger, owing to thermal desorption of hydrogen gas from the region surrounding the ablated volume. For the ablative removal of hydrogen isotopes, SAR is more desirable because of higher removal efficiency and less production of hydrocarbons.

Experimental Study of Direct Laser Deposition of Ti-6Al-4V and Inconel 718 by Using Pulsed Parameters

Directory of Open Access Journals (Sweden)

Kamran Shah

2014-01-01

Full Text Available Laser direct metal deposition (LDMD has developed from a prototyping to a single metal manufacturing tool. Its potential for creating multimaterial and functionally graded structures is now beginning to be explored. This work is a first part of a study in which a single layer of Inconel 718 is deposited on Ti-6Al-4V substrate. Single layer tracks were built at a range of powder mass flow rates using a coaxial nozzle and 1.5 kW diode laser operating in both continuous and pulsed beam modes. This part of the study focused on the experimental findings during the deposition of Inconel 718 powder on Ti-6Al-4V substrate. Scanning electron microscopy (SEM and X-ray diffraction analysis were performed for characterization and phase identification. Residual stress measurement had been carried out to ascertain the effects of laser pulse parameters on the crack development during the deposition process.

Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

Energy Technology Data Exchange (ETDEWEB)

Conde, J.C., E-mail: jconde@uvigo.e [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas y Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Gontad, F.; Chiussi, S. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Fornarini, L. [Enea-Frascati, Via Enrico Fermi 45, I-00044 Frascati (Roma) (Italy); Leon, B. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain)

2010-02-26

A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) excimer laser provides high energy densities during very short laser pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds. These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface. In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.

Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

International Nuclear Information System (INIS)

Conde, J.C.; Martin, E.; Gontad, F.; Chiussi, S.; Fornarini, L.; Leon, B.

2010-01-01

A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) excimer laser provides high energy densities during very short laser pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds. These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface. In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.

Epitaxial growth of indium oxyfluoride thin films by reactive pulsed laser deposition: Structural change induced by fluorine insertion into vacancy sites in bixbyite structure

Energy Technology Data Exchange (ETDEWEB)

Okazaki, Sohei [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Hirose, Yasushi, E-mail: hirose@chem.s.u-tokyo.ac.jp [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Yang, Chang [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Harayama, Isao; Sekiba, Daiichiro [Tandem Accelerator Complex, University of Tsukuba, Tennodai 1-1-1, Tsukuba, Ibaraki 305-8577 (Japan); Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

2014-05-30

InO{sub x}F{sub y} thin films were epitaxially grown on Y-stabilized ZrO{sub 2} (111) substrates by reactive pulsed laser deposition. By changing the substrate temperature (T{sub S}), we were able to control the fluorine content of the film. Phase-pure epitaxial thin films with bixbyite-like ordering in the anion-site occupancy were obtained at high T{sub S} (≥ 240 °C), where fluorine was inserted into the vacancy sites in the bixbyite lattice up to y / (x + y) ∼ 0.3. By decreasing T{sub S}, y / (x + y) increased and the bixbyite-like ordering disappeared; simultaneously, fluorine-rich and fluorine-poor subphases emerged. The films grown at T{sub S} ≤ 150 °C were amorphous and exhibited higher optical absorbance and electrical resistivity than the epitaxial films. - Highlights: • InO{sub x}F{sub y} epitaxial thin films with high fluorine concentration were grown on Y:ZrO{sub 2}. • Anion composition and structural, optical and transport properties were studied. • Fluorine is topotactically inserted into the oxygen vacancy sites in bixbyite cell. • Bixbyite-like ordering of the anion site occupancy was conserved in y / (x + y) ≤ ∼ 0.3.

Growth of centimeter-scale atomically thin MoS2 films by pulsed laser deposition

Directory of Open Access Journals (Sweden)

Gene Siegel

2015-05-01

Full Text Available We are reporting the growth of single layer and few-layer MoS2 films on single crystal sapphire substrates using a pulsed-laser deposition technique. A pulsed KrF excimer laser (wavelength: 248 nm; pulse width: 25 ns was used to ablate a polycrystalline MoS2 target. The material thus ablated was deposited on a single crystal sapphire (0001 substrate kept at 700 °C in an ambient vacuum of 10−6 Torr. Detailed characterization of the films was performed using atomic force microscopy (AFM, Raman spectroscopy, UV-Vis spectroscopy, and photoluminescence (PL measurements. The ablation of the MoS2 target by 50 laser pulses (energy density: 1.5 J/cm2 was found to result in the formation of a monolayer of MoS2 as shown by AFM results. In the Raman spectrum, A1g and E12g peaks were observed at 404.6 cm−1 and 384.5 cm−1 with a spacing of 20.1 cm−1, confirming the monolayer thickness of the film. The UV-Vis absorption spectrum exhibited two exciton absorption bands at 672 nm (1.85 eV and 615 nm (2.02 eV, with an energy split of 0.17 eV, which is in excellent agreement with the theoretically predicted value of 0.15 eV. The monolayer MoS2 exhibited a PL peak at 1.85 eV confirming the direct nature of the band-gap. By varying the number of laser pulses, bi-layer, tri-layer, and few-layer MoS2 films were prepared. It was found that as the number of monolayers (n in the MoS2 films increases, the spacing between the A1g and E12g Raman peaks (Δf increases following an empirical relation, Δ f = 26 . 45 − 15 . 42 1 + 1 . 44 n 0 . 9 cm − 1 .

Short-pulse laser interactions with disordered materials and liquids

Energy Technology Data Exchange (ETDEWEB)

Phinney, L.M.; Goldman, C.H.; Longtin, J.P.; Tien, C.L. [Univ. of California, Berkeley, CA (United States)

1995-12-31

High-power, short-pulse lasers in the picosecond and subpicosecond range are utilized in an increasing number of technologies, including materials processing and diagnostics, micro-electronics and devices, and medicine. In these applications, the short-pulse radiation interacts with a wide range of media encompassing disordered materials and liquids. Examples of disordered materials include porous media, polymers, organic tissues, and amorphous forms of silicon, silicon nitride, and silicon dioxide. In order to accurately model, efficiently control, and optimize short-pulse, laser-material interactions, a thorough understanding of the energy transport mechanisms is necessary. Thus, fractals and percolation theory are used to analyze the anomalous diffusion regime in random media. In liquids, the thermal aspects of saturable and multiphoton absorption are examined. Finally, a novel application of short-pulse laser radiation to reduce surface adhesion forces in microstructures through short-pulse laser-induced water desorption is presented.

Sims Characterisation of ZnO Layer Prepared By Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Andrej Vincze

2005-01-01

Full Text Available New material development requires new technologies to create and prepare basic material for semiconductor industry and device applications. Materials have given properties, which exhibit particulary small tolerances. One of the most important and promising material is recently ZnO. ZnO has specific properties for near UV emission and absorption optical devices. The pulsed laser deposition (PLD is one of the methods to prepare this type of material. The aim of this paper is to compare properties of ZnO layers deposited from pure Zn target in oxygen atmosphere and the analysis of their surface properties by secondary ion mass spectroscopy (SIMS, atomic force microscopy (AFM and scanning electron microscopy (SEM.

Pulsed-laser-deposited YBCO thin films using modified MTG processed targets

CERN Document Server

Kim, C H; Kim, I T; Hahn, T S

1999-01-01

YBCO thin films were deposited by pulsed laser deposition from targets fabricated using the modified melt-textured growth (MTG) method and the solid-state sintering (SSS) method. All of the films showed c-axis orientations, but the films from the MTG targets had better crystallinity than those from the SSS targets. As the substrate temperature was increased, T sub c and J sub c of the films increased. The films from the MTG targets showed better superconducting properties than those from the SSS targets. From the composition analysis of the targets, the Y-richer vapor species arriving at the substrate from the MTG targets are thought to form a thermodynamically more stable YBCO phase with less cation disorder.

The flip-over effect in pulsed laser deposition: Is it relevant at high background gas pressures?

Energy Technology Data Exchange (ETDEWEB)

Ojeda-G-P, Alejandro [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen-PSI (Switzerland); Schneider, Christof W., E-mail: christof.schneider@psi.ch [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen-PSI (Switzerland); Döbeli, Max [Ion Beam Physics, ETH Zurich, CH-8093 Zurich (Switzerland); Lippert, Thomas; Wokaun, Alexander [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen-PSI (Switzerland)

2015-12-01

Highlights: • The flip-over effect in PLD is observed up to high deposition pressures. • Consistent congruent transfer of the target composition is generally not correct. • The choice of deposition pressure can change the film composition strongly. • Large compositional changes appear at high off-axis angles and large spot sizes. - Abstract: In pulsed laser deposition the use of a rectangular or elliptical beam spot with a non 1:1 aspect ratio leads to the so called flip-over effect. Here, the longest dimension of the laser spot results in the shortest direction of plasma plume expansion. This effect has been mainly reported for vacuum depositions of single element targets and is particularly noticeable when the aspect ratio of the beam spot is large. We investigate the flip-over effect in vacuum and at three relevant background-gas pressures for pulsed laser deposition using a La{sub 0.4}Ca{sub 0.6}MnO{sub 3} target by measuring the thickness dependence of the deposited material as a function of angle. The film thicknesses and compositions are determined by Rutherford backscattering and argon is used to reduce the influence of additional chemical reactions in the plasma. The results show the prevalence of the flip-over effect for all pressures except for the highest, i.e. 1 × 10{sup −1} mbar, where the film thickness is constant for all angles. The composition profiles show noticeable compositional variations of up to 30% with respect to the target material depending on the background gas pressure, the angular location, and the laser spot dimensions.

Pulsed-laser deposition and growth studies of Bi3Fe5O12 thin films

International Nuclear Information System (INIS)

Lux, Robert; Heinrich, Andreas; Leitenmeier, Stephan; Koerner, Timo; Herbort, Michael; Stritzker, Bernd

2006-01-01

Magneto-optical garnets are attractive because of their high Faraday rotation and low optical loss in the near infrared. Therefore their use is generally in nonreciprocal devices, i.e., as optical isolators in optical communication. In this paper we present data concerning the deposition of Bi 3 Fe 5 O 12 (BIG) thin films on (100) and (111) Gd 3 Ga 5 O 12 substrates using pulsed-laser deposition. Laser-induced processes on the surface of the oxide target used for ablation were analyzed and numerous films were deposited. We found the BIG film quality to be strongly affected by oxygen pressure, laser energy density, and the Bi/Fe film ratio, whereas temperature had a minor influence. We also investigated the BIG-film deposition using a target pressed from metallic Bi and Fe powders and found information on the growth behavior of BIG. We report on details of the film deposition and film properties determined by environmental scanning electron microscopy, energy dispersive x-ray analysis, Rutherford backscattering spectroscopy, and x-ray diffraction. In addition, we determined the Faraday rotation of the films

Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates

KAUST Repository

Park, Jihwey

2014-02-24

The crystal structures of LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates at oxygen pressure of 10−3 millibars or 10−5 millibars, where kinetics of ablated species hardly depend on oxygen background pressure, are compared. Our results show that the interface between LaAlO3 and SrTiO3 is sharper when the oxygen pressure is lower. Over time, the formation of various crystalline phases is observed while the crystalline thickness of the LaAlO3 layer remains unchanged. X-ray scattering as well as atomic force microscopy measurements indicate three-dimensional growth of such phases, which appear to be fed from an amorphous capping layer present in as-grown samples.

Pulsed laser deposition from ZnS and Cu₂SnS₃ multicomponent targets

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Cazzaniga, Andrea Carlo; Canulescu, Stela

2015-01-01

Thin films of ZnS and Cu2SnS3have been produced by pulsed laser deposition (PLD), the latter for the firsttime. The effect of fluence and deposition temperature on the structure and the transmission spectrumas well as the deposition rate has been investigated, as has the stoichiometry of the films...

Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation; Sintesis y caracterizacion de peliculas delgadas de carbono amorfo nitrurado, depositadas por ablacion laser

Energy Technology Data Exchange (ETDEWEB)

Rebollo P, B

2001-07-01

The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp{sup 2} and sp{sup 3} bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

Field emission study of pulsed laser deposition of gold on clean and oxidized tungsten tip

Czech Academy of Sciences Publication Activity Database

Plšek, Jan

2014-01-01

Roč. 292, FEB 2014 (2014), s. 717-725 ISSN 0169-4332 R&D Projects: GA MŠk LH13022 Institutional support: RVO:61388955 Keywords : nanoparticles * nucleation and growth * pulsed laser deposition Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.711, year: 2014

Characterization of 13 and 30 μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

International Nuclear Information System (INIS)

Despeisse, M.; Anelli, G.; Commichau, S.; Dissertori, G.; Garrigos, A.; Jarron, P.; Miazza, C.; Moraes, D.; Shah, A.; Wyrsch, N.; Viertel, G.

2004-01-01

We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30 μm thick a-Si:H films deposited on top of an ASIC containing a linear array of high-speed low-noise transimpedance amplifiers designed in a 0.25 μm CMOS technology. Experimental results presented have been obtained with a 600 nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed

Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications

Science.gov (United States)

Pereira, Antonio; Bonhommeau, Sébastien; Sirotkin, Sergey; Desplanche, Sarah; Kaba, Mamadouba; Constantinescu, Catalin; Diallo, Abdou Karim; Talaga, David; Penuelas, Jose; Videlot-Ackermann, Christine; Alloncle, Anne-Patricia; Delaporte, Philippe; Rodriguez, Vincent

2017-10-01

We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).

Ultrashort Pulsed Laser Ablation of Magnesium Diboride: Plasma Characterization and Thin Films Deposition

Directory of Open Access Journals (Sweden)

Angela De Bonis

2015-01-01

Full Text Available A MgB2 target has been ablated by Nd:glass laser with a pulse duration of 250 fs. The plasma produced by the laser-target interaction, showing two temporal separated emissions, has been characterized by time and space resolved optical emission spectroscopy and ICCD fast imaging. The films, deposited on silicon substrates and formed by the coalescence of particles with nanometric size, have been analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction. The first steps of the films growth have been studied by Transmission Electron Microscopy. The films deposition has been studied by varying the substrate temperature from 25 to 500°C and the best results have been obtained at room temperature.

Pulsed-laser deposition of smooth thin films of Er, Pr and Nd doped glasses

Energy Technology Data Exchange (ETDEWEB)

Epurescu, G. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania)], E-mail: george@nipne.ro; Vlad, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania); Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Bodea, M.A. [Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Vasiliu, C. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Dumitrescu, O. [University Politehnica of Bucharest, Faculty of Industrial Chemistry, Science and Engineering of Oxide Materials Department, Polizu Str. 1, sect. 1, Bucharest (Romania); Niciu, H. [National Institute of Glass, Department for Laser Glass Technology, 47 Th. Pallady Str., Sect.3, Bucharest (Romania); Elisa, M. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Siraj, K.; Pedarnig, J.D.; Baeuerle, D. [Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Filipescu, M.; Nedelcea, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania); Galca, A.C. [National Institute of Materials Physics, Atomistilor 105bis, P.O. Box MG 07, RO- 77125, Magurele (Romania); Grigorescu, C.E.A. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania)

2009-03-01

Thin films of complex oxides have been obtained by pulsed-laser deposition (PLD) from glass targets belonging to the system Li{sub 2}O-Al{sub 2}O{sub 3}-P{sub 2}O{sub 5}-(RE){sub 2}O{sub 3}, with RE = Nd, Pr, Er. The films were deposited on quartz, silicon and ITO/glass substrates using a F{sub 2} laser ({lambda} = 157 nm, {iota} {approx} 20 ns) for ablation in vacuum. The structural, morphological and optical properties of the oxide films were investigated through IR and UV-VIS spectroscopy, Atomic Force Microscopy (AFM), Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy (SEM-EDX) and Spectroscopic Ellipsometry. The laser wavelength was found to be the key parameter to obtain thin films with very smooth surface. In this way new possibilities are opened to grow multilayer structures for photonic applications.

Fabrication of thin film CZTS solar cells with Pulsed Laser Deposition

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo

behind the Quantum Efficiency (QE) curve. What do I learn by reading this thesis? You will learn how to deposit a thin film CZTS absorber layer with Pulsed Laser Deposition with the desired composition. In addition, you will see how material transfer in PLD, which is generally believed...... to be stoichiometric, can be very much non-stoichiometric. How to do it? I suggest to do PLD on a single sintered target (2CuS:ZnS:SnS) .The films are deposited at room temperature and then annealed in a furnace with some sulfur powder aside. The annealing step is as important as the PLD step to the final device...... the non-equilibrium properties of PLD for the production of CZTS films. This may enable one to deposit crystalline CZTS at lower substrate temperature, with no requirement for an annealing step afterwards. Preliminary results do not seem too encouraging. The main obstacle to this approach may...

High fluence deposition of polyethylene glycol films at 1064 nm by matrix assisted pulsed laser evaporation (MAPLE)

DEFF Research Database (Denmark)

Purice, Andreea; Schou, Jørgen; Kingshott, P.

2007-01-01

Matrix assisted pulsed laser evaporation (MAPLE) has been applied for deposition of thin polyethylene glycol (PEG) films with infrared laser light at 1064 nm. We have irradiated frozen targets (of 1 wt.% PEG dissolved in water) and measured the deposition rate in situ with a quartz crystal 2...... microbalance. The laser fluence needed to produce PEG films turned out to be unexpectedly high with a threshold of 9 J/cm(2) and the deposition rate was much lower than that with laser light at 355 nm. Results from matrix assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI......-TOF-MS) analysis demonstrate that the chemistry, molecular weight and polydispersity of the PEG films were identical to the starting material. Studies of the film surface with scanning electron microscopy (SEM) indicate that the Si-substrate is covered by a relatively homogenous PEG film with few bare spots. (c...

Amorphous nanostructuralization in HOPG by 1014 W cm-2 laser

International Nuclear Information System (INIS)

NISHIMURA, Yasuhiko; KITAGAWA, Yoneyoshi; MORI, Yoshitaka; ISHII, Katsuhiro; HANAYAMA, Ryohei; AZUMA, Hirozumi; HIOKI, Tatsumi; MOTOHIRO, Tomoyoshi; NISHI, Teppei; KOMEDA, Osamu; SEKINE, Takashi; SATO, Nakahiro; KURITA, Takashi; KAWASHIMA, Toshiyuki; KAN, Hirofumi; SUNAHARA, Atsushi; SENTOKU, Yasuhiko; MIURA, Eisuke

2016-01-01

This reports provide an amorphous nanostructuralization technique on the surface modification in Highly Oriented Pyrolytic Graphite (HOPG) by using a femtosecond laser. We showed, for the first time, that the surface of HOPG is changed to the amorphous nanostructuralization graphite by using a femtosecond laser-driven compression technique. Our results also suggest that the HOPG surface is changed until the deeper area from the surface by the laser-driven shock wave. A single shot of a femtosecond laser beam (1.27 ∼ 1.33×10 14 Wcm∼ 2 in intensity, with 2 mm-diameter, and 110 fs in pulse width) is irradiated under the vacuum ambience onto a 2 mm-thick of HOPG. The calculated impact pressures on a sample was 8.3 ∼ 8.7 GPa. Crystal structure in the HOPG were analyzed using a Raman spectroscopy and an X-ray diffraction, those analyzing depth from the surface were 50 nm and 350 μm, respectively. (paper)

Nature of the pulsed laser process for the deposition of high T/sub c/ superconducting thin films

International Nuclear Information System (INIS)

Venkatesan, T.; Wu, X.D.; Inam, A.

1988-01-01

The pulsed laser thin-film deposition process can enable preparation of thin films of complex composition with good control over the film stoichiometry. The film compositions are similar to that of the target pellet and as a consequence this technique appears to be an ideal method for preparing high T/sub c/ thin films on a variety of substrates.The factors which contribute to this beneficial phenomenon have been explored by a laser ionization mass spectrometry (LIMS) and a post ablation ionization (PAI) neutral velocity analysis technique in order to determine the mass and velocities of the laser ejected material. In addition, x-ray absorption measurements on films deposited onto substrates at room temperature were performed in order to identify the presence of short-range crystalline order in the films. Both of these studies rule out the ejection of stoichiometric clusters of material from the pellet during the laser ablation/deposition process. Instead, binary and ternary suboxides are emitted from the target pellet. These suboxides most likely have unit sticking coefficient to the substrate which could contribute to the preservation of the film stoichiometry. The velocity distribution of several neutral species (e.g., BaO) indicates that particles have energies of several eV. Thus the effective temperatures of the emitted species are ∼15 x 10 3 K, and these energetic particles may facilitate growth of the crystalline films at low substrate temperatures

Deposition of diamond-like carbon films by plasma source ion implantation with superposed pulse

International Nuclear Information System (INIS)

Baba, K.; Hatada, R.

2003-01-01

Diamond-like carbon (DLC) films were prepared on silicon wafer substrate by plasma source ion implantation with superposed negative pulse. Methane and acetylene gases were used as working gases for plasma. A negative DC voltage and a negative pulse voltage were superposed and applied to the substrate holder. The DC voltage was changed in the range from 0 to -4 kV and the pulse voltage was changed from 0 to -18 kV. The surface of DLC films was very smooth. The deposition rate of DLC films increased with increasing in superposed DC bias voltage. Carbon ion implantation was confirmed for the DLC film deposited from methane plasma with high pulse voltage. I D /I G ratios of Raman spectroscopy were around 1.5 independent on pulse voltage. The maximum hardness of 20.3 GPa was observed for the film prepared with high DC and high pulse voltage

Pulsed laser deposited KY3F10: Ho3+ thin films: Influence of target to substrate

CSIR Research Space (South Africa)

Debelo, NG

2017-04-01

Full Text Available The influence of target to substrate distance (dts) on the structural, morphological and photoluminescence (PL) properties of commercially obtained KY3F10 : Ho3+ phosphor thin films prepared by pulsed laser deposition is investigated for dts values...

Bonding structure and mechanical properties of B-C-N thin films synthesized by pulsed laser deposition at different laser fluences

International Nuclear Information System (INIS)

Wang, C.B.; Xiao, J.L.; Shen, Q.; Zhang, L.M.

2016-01-01

Boron carbon nitride (B-C-N) thin films have been grown by pulsed laser deposition under different laser fluences changing from 1.0 to 3.0 J/cm"2. The influence of laser fluence on microstructure, bonding structure, and mechanical properties of the films was studied, so as to explore the possibility of improving their mechanical properties by controlling bonding structure. The bonding structure identified by FT-IR and XPS indicated the coexistence of B-N, B-C, N-C and N=C bonds in the films, suggesting the formation of a ternary B-C-N hybridization. There is a clear evolution of bonding structure in the B-C-N films with the increasing of laser fluence. The variation of the mechanical properties as a function of laser fluence was also in accordance with the evolution of B-C and sp"3 N-C bonds whereas contrary to that of sp"2 B-N and N=C bonds. The hardness and modulus reached the maximum value of 33.7 GPa and 256 GPa, respectively, at a laser fluence of 3.0 J/cm"2, where the B-C-N thin films synthesized by pulsed laser deposition possessed the highest intensity of B-C and N-C bonds and the lowest fraction of B-N and N=C bonds. - Highlights: • Improvement of mechanical property by controlling bonding structure is explored. • A clear evolution of bonding structure with the increasing of laser fluence • Variation of property is in accordance with the evolution of B−C and N−C bonds.

Optical, compositional and structural properties of pulsed laser deposited nitrogen-doped Titanium-dioxide

Science.gov (United States)

Farkas, B.; Heszler, P.; Budai, J.; Oszkó, A.; Ottosson, M.; Geretovszky, Zs.

2018-03-01

N-doped TiO2 thin films were prepared using pulsed laser deposition by ablating metallic Ti target with pulses of 248 nm wavelength, at 330 °C substrate temperature in reactive atmospheres of N2/O2 gas mixtures. These films were characterized by spectroscopic ellipsometry, X-ray photoelectron spectroscopy and X-ray diffraction. Optical properties are presented as a function of the N2 content in the processing gas mixture and correlated to nitrogen incorporation into the deposited layers. The optical band gap values decreased with increasing N concentration in the films, while a monotonically increasing tendency and a maximum can be observed in case of extinction coefficient and refractive index, respectively. It is also shown that the amount of substitutional N can be increased up to 7.7 at.%, but the higher dopant concentration inhibits the crystallization of the samples.

Formation of amorphous metal alloys by chemical vapor deposition

Science.gov (United States)

Mullendore, A.W.

1988-03-18

Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

Cr13Ni5Si2-Based Composite Coating on Copper Deposited Using Pulse Laser Induction Cladding

Directory of Open Access Journals (Sweden)

Ke Wang

2017-02-01

Full Text Available A Cr13Ni5Si2-based composite coating was successfully deposited on copper by pulse laser induction hybrid cladding (PLIC, and its high-temperature wear behavior was investigated. Temperature evolutions associated with crack behaviors in PLIC were analyzed and compared with pulse laser cladding (PLC using the finite element method. The microstructure and present phases were analyzed using scanning electron microscopy and X-ray diffraction. Compared with continuous laser induction cladding, the higher peak power offered by PLIC ensures metallurgical bonding between highly reflective copper substrate and coating. Compared with a wear test at room temperature, at 500 °C the wear volume of the Cr13Ni5Si2-based composite coating increased by 21%, and increased by 225% for a NiCr/Cr3C2 coating deposited by plasma spray. This novel technology has good prospects for application with respect to the extended service life of copper mold plates for slab continuous casting.

Cr13Ni5Si2-Based Composite Coating on Copper Deposited Using Pulse Laser Induction Cladding.

Science.gov (United States)

Wang, Ke; Wang, Hailin; Zhu, Guangzhi; Zhu, Xiao

2017-02-10

A Cr13Ni5Si2-based composite coating was successfully deposited on copper by pulse laser induction hybrid cladding (PLIC), and its high-temperature wear behavior was investigated. Temperature evolutions associated with crack behaviors in PLIC were analyzed and compared with pulse laser cladding (PLC) using the finite element method. The microstructure and present phases were analyzed using scanning electron microscopy and X-ray diffraction. Compared with continuous laser induction cladding, the higher peak power offered by PLIC ensures metallurgical bonding between highly reflective copper substrate and coating. Compared with a wear test at room temperature, at 500 °C the wear volume of the Cr13Ni5Si2-based composite coating increased by 21%, and increased by 225% for a NiCr/Cr3C2 coating deposited by plasma spray. This novel technology has good prospects for application with respect to the extended service life of copper mold plates for slab continuous casting.

Hydrating behavior of Mg-based nano-layers prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Wioniewski, Z; Bystrzycki, J; Mroz, W; Jastrzabski, C

2009-01-01

The hydriding behavior of Mg with TiO 2 and Si nanolayers prepared by the pulsed laser deposition (PLD) was studied. The phase structure, chemical composition and hydriding properties of the obtained Mg-based nanolayers were investigated by the XRD, TEM, AFM, RS, SIMS and the volumetric Sievert method. It was shown that PLD is an excellent technique for producing the complex structures based on Mg. Both, the kinetic and destabilization topics were investigated in this paper.

Nanocomposite oxide thin films grown by pulsed energy beam deposition

International Nuclear Information System (INIS)

Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

2011-01-01

Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

Yttria and ceria doped zirconia thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Saporiti, F.; Juarez, R. E., E-mail: cididi@fi.uba.ar [Grupo de Materiales Avanzados, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Audebert, F. [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Boudard, M. [Laboratoire des Materiaux et du Genie Physique (CNRS), Grenoble (France)

2013-11-01

The Yttria stabilized Zirconia (YSZ) is a standard electrolyte for solid oxide fuel cells (SOFCs), which are potential candidates for next generation portable and mobile power sources. YSZ electrolyte thin films having a cubic single phase allow reducing the SOFC operating temperature without diminishing the electrochemical power density. Films of 8 mol% Yttria stabilized Zirconia (8YSZ) and films with addition of 4 weight% Ceria (8YSZ + 4CeO{sub 2}) were grown by pulsed laser deposition (PLD) technique using 8YSZ and 8YSZ + 4CeO{sub 2} targets and a Nd-YAG laser (355 nm). Films have been deposited on Soda-Calcia-Silica glass and Si(100) substrates at room temperature. The morphology and structural characteristics of the samples have been studied by means of X-ray diffraction and scanning electron microscopy. Films of a cubic-YSZ single phase with thickness in the range of 1-3 Micro-Sign m were grown on different substrates (author)

Preparation of calcium-doped boron nitride by pulsed laser deposition

International Nuclear Information System (INIS)

Anzai, Atsushi; Fuchigami, Masayo; Yamanaka, Shoji; Inumaru, Kei

2012-01-01

Highlights: ► Ca-doped boron nitride was prepared by pulsed laser deposition. ► The films do not have long range order structure in terms of XRD. ► But the films had short-range order structure of h-BN sheets. ► Ca-free films had the same optical band gap as crystalline bulk h-BN (5.8 eV.) ► Ca-doping brought about decreases of the optical band gap by ca. 0.4 eV. -- Abstract: Calcium-doped BN thin films Ca x BN y (x = 0.05–0.1, y = 0.7–0.9) were grown on α-Al 2 O 3 (0 0 1) substrates by pulsed laser deposition (PLD) using h-BN and Ca 3 N 2 disks as the targets under nitrogen radical irradiation. Infrared ATR spectra demonstrated the formation of short range ordered structure of BN hexagonal sheets, while X-ray diffraction gave no peak indicating the absence of long-range order structure in the films. It was notable that Ca-doped film had 5.45–5.55 eV of optical band gap, while the band gap of Ca-free films was 5.80–5.85 eV. This change in the band gap is ascribed to interaction of Ca with the BN sheets; first principle calculations on h-BN structure indicated that variation of inter-plane distance between the BN layers did not affect the band gap. This study highlights that PLD could prepare BN having short-range structure of h-BN sheets and being doped with electropositive cation which varies the optical band gap of the films.

Investigation of droplet formation in pulsed Nd:YAG laser deposition of metals and silicon

Energy Technology Data Exchange (ETDEWEB)

Siew, Wee-Ong; Lee, Wai-Keat; Wong, Hin-Yong; Tou, Teck-Yong [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yong, Thian-Khok [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Kuala Lumpur (Malaysia); Yap, Seong-Shan [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Norwegian University of Science and Technology, Institute of Physics, Trondheim (Norway)

2010-12-15

In the process of pulsed laser deposition of nickel (Ni) and ruthenium (Ru) thin films, the occurrence of phase explosion in ablation was found to affect the deposition rate and enhance the optical emissions from the plasma plume. Faster thin-film growth rates coincide with the onset of phase explosion as a result of superheating and/or sub-surface boiling which also increased the particulates found on the thin-film surface. These particulates were predominantly droplets which may not be round but flattened and also debris for the case of silicon (Si) ablation. The droplets from Ni and Ru thin films were compared in terms of size distribution and number density for different laser fluences. The origins of these particulates were correlated to the bubble and ripple formations on the targets while the transfer to the thin film surface was attributed to the laser-induced ejection from the targets. (orig.)

Investigation of droplet formation in pulsed Nd:YAG laser deposition of metals and silicon

International Nuclear Information System (INIS)

Siew, Wee-Ong; Lee, Wai-Keat; Wong, Hin-Yong; Tou, Teck-Yong; Yong, Thian-Khok; Yap, Seong-Shan

2010-01-01

In the process of pulsed laser deposition of nickel (Ni) and ruthenium (Ru) thin films, the occurrence of phase explosion in ablation was found to affect the deposition rate and enhance the optical emissions from the plasma plume. Faster thin-film growth rates coincide with the onset of phase explosion as a result of superheating and/or sub-surface boiling which also increased the particulates found on the thin-film surface. These particulates were predominantly droplets which may not be round but flattened and also debris for the case of silicon (Si) ablation. The droplets from Ni and Ru thin films were compared in terms of size distribution and number density for different laser fluences. The origins of these particulates were correlated to the bubble and ripple formations on the targets while the transfer to the thin film surface was attributed to the laser-induced ejection from the targets. (orig.)

Low operating voltage InGaZnO thin-film transistors based on Al{sub 2}O{sub 3} high-k dielectrics fabricated using pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K. [Qingdao University, Qingdao (China); DongEui University, Busan (Korea, Republic of); Lee, W. J.; Shin, B. C. [DongEui University, Busan (Korea, Republic of); Cho, C. R. [Pusan National University, Busan (Korea, Republic of)

2014-05-15

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al{sub 2}O{sub 3} dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al{sub 2}O{sub 3} and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al{sub 2}O{sub 3} gate dielectric exhibits a very low leakage current density of 1.3 x 10{sup -8} A/cm{sup 2} at 5 V and a high capacitance density of 60.9 nF/cm{sup 2}. The IGZO TFT with a structure of Ni/IGZO/Al{sub 2}O{sub 3}/Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm{sup 2}V{sup -1}s{sup -1}, an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10{sup 7}.

Growth of centimeter-scale atomically thin MoS{sub 2} films by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Siegel, Gene; Venkata Subbaiah, Y. P.; Prestgard, Megan C.; Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

2015-05-01

We are reporting the growth of single layer and few-layer MoS{sub 2} films on single crystal sapphire substrates using a pulsed-laser deposition technique. A pulsed KrF excimer laser (wavelength: 248 nm; pulse width: 25 ns) was used to ablate a polycrystalline MoS{sub 2} target. The material thus ablated was deposited on a single crystal sapphire (0001) substrate kept at 700 °C in an ambient vacuum of 10{sup −6} Torr. Detailed characterization of the films was performed using atomic force microscopy (AFM), Raman spectroscopy, UV-Vis spectroscopy, and photoluminescence (PL) measurements. The ablation of the MoS{sub 2} target by 50 laser pulses (energy density: 1.5 J/cm{sup 2}) was found to result in the formation of a monolayer of MoS{sub 2} as shown by AFM results. In the Raman spectrum, A{sub 1g} and E{sup 1}{sub 2g} peaks were observed at 404.6 cm{sup −1} and 384.5 cm{sup −1} with a spacing of 20.1 cm{sup −1}, confirming the monolayer thickness of the film. The UV-Vis absorption spectrum exhibited two exciton absorption bands at 672 nm (1.85 eV) and 615 nm (2.02 eV), with an energy split of 0.17 eV, which is in excellent agreement with the theoretically predicted value of 0.15 eV. The monolayer MoS{sub 2} exhibited a PL peak at 1.85 eV confirming the direct nature of the band-gap. By varying the number of laser pulses, bi-layer, tri-layer, and few-layer MoS{sub 2} films were prepared. It was found that as the number of monolayers (n) in the MoS{sub 2} films increases, the spacing between the A{sub 1g} and E{sup 1}{sub 2g} Raman peaks (Δf) increases following an empirical relation, Δf=26.45−(15.42)/(1+1.44 n{sup 0.9}) cm{sup −1}.

Optical response of oxygen deficient La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films deposited by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Cesaria, M., E-mail: maura.cesaria@le.infn.it [Department of Mathematics and Physics “Ennio De Giorgi”, University of Salento, Via Arnesano, 73100 Lecce (Italy); Caricato, A.P.; Leggieri, G.; Martino, M. [Department of Mathematics and Physics “Ennio De Giorgi”, University of Salento, Via Arnesano, 73100 Lecce (Italy); Maruccio, G. [Department of Mathematics and Physics “Ennio De Giorgi”, University of Salento, Via Arnesano, 73100 Lecce (Italy); National Nanotechnology Laboratory (NNL)-Nanoscience Institute-CNR, Via Arnesano, 73100 Lecce (Italy)

2013-10-31

The optical response of 200 nm thick La{sub 0.7}Sr{sub 0.3}MnO{sub (3−δ)} films, deposited by pulsed laser deposition on amorphous silica substrates heated at nearly 600 °C, under different oxygen pressures (0.1 Pa, 0.5 Pa, 1 Pa, 5 Pa and 10 Pa), is reported. The effects of the oxygen non-stoichiometry are investigated at room temperature dealing with the absorption coefficient and the Tauc's plot method rather than conventional optical conductivity. The absorption curves are evaluated by an algorithm able to realistically describe the behavior of thin films without exploiting numerical extrapolations or simplified theoretical models or ab-initio calculations. Optical features, tunable by the growth oxygen pressure, are discussed based on the known theoretical and experimental scenario. - Highlights: • Overview of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} basics to highlight basic questions to be assessed. • Optical analysis by the absorption coefficient rather than optical conductivity. • Realistic absorption response that avoids numerical refinements and simulations. • Analysis of the role of oxygen vacancies in tuning the electronic dispersion. • First investigation of direct and indirect transitions by the Tauc's plot.

Pulsed Laser Deposition Processing of Improved Titanium Nitride Coatings for Implant Applications

Science.gov (United States)

Haywood, Talisha M.

Recently surface coating technology has attracted considerable attention of researchers to develop novel coatings with enhanced functional properties such as hardness, biocompatibility, wear and corrosion resistance for medical devices and surgical tools. The materials currently being used for surgical implants include predominantly stainless steel (316L), cobalt chromium (Co-Cr), titanium and its alloys. Some of the limitations of these implants include improper mechanical properties, corrosion resistance, cytotoxicity and bonding with bone. One of the ways to improve the performance and biocompatibility of these implants is to coat their surfaces with biocompatible materials. Among the various coating materials, titanium nitride (TiN) shows excellent mechanical properties, corrosion resistance and low cytotoxicity. In the present work, a systematic study of pulsed laser ablation processing of TiN coatings was conducted. TiN thin film coatings were grown on commercially pure titanium (Ti) and stainless steel (316L) substrates at different substrate temperatures and different nitrogen partial pressures using the pulsed laser deposition (PLD) technique. Microstructural, surface, mechanical, chemical, corrosion and biological analysis techniques were applied to characterize the TiN thin film coatings. The PLD processed TiN thin film coatings showed improvements in mechanical strength, corrosion resistance and biocompatibility when compared to the bare substrates. The enhanced performance properties of the TiN thin film coatings were a result of the changing and varying of the deposition parameters.

Growth and characterization of ternary Ni, Mg–Al and Ni–Al layered double hydroxides thin films deposited by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Matei, A.; Ion, V.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania)

2016-09-01

Layered double hydroxides (LDHs) are a class of layered materials consisting of positively charged brucite-like layers and exchangeable interlayer anions. Layered double hydroxides containing a transition metal which undergoes a reversible redox reaction in the useful potential range have been proposed as electrode coating materials due to their properties of charge transport and redox catalysts in basic solutions. Ni–Al,(Ni,Mg)–Al and, as reference, non-electronically conductive Mg–Al double hydroxides thin films were obtained via pulsed laser deposition technique. The thin films were deposited on different substrates (Si, glass) by using a Nd:YAG laser (1064 nm) working at a repetition rate of 10 Hz. X-ray diffraction, Atomic Force Microscopy, Energy Dispersive X-ray spectroscopy, Fourier Transform Infra-Red Spectroscopy, Secondary Ions Mass Spectrometry, Impedance Analyzer and ellipsometry were the techniques used for the as deposited thin films investigation. The optical properties of Ni based LDH thin films and the effect of the Ni amount on the structural, morphological and optical response are evidenced. The optical band gap values, covering a domain between 3.84 eV and 4.38 eV, respond to the Ni overall concentration: the higher Ni amount the lower the band gap value. - Highlights: • Ternary Ni, Mg–Al and Ni–Al layered double hydroxides thin films were deposited. • The effect of the nickel is evidenced. • The possibility to tailor the materials accompanied by an optical response is shown.

Influence of silicon orientation and cantilever undercut on the determination of Young's modulus of pulsed laser deposited PZT

NARCIS (Netherlands)

Nazeer, H.; Woldering, L.A.; Abelmann, Leon; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Elwenspoek, Michael Curt

In this work we show for the first time that the effective in-plane Young’s modulus of PbZr0.52Ti0.48O3 (PZT) thin films, deposited by pulsed laser deposition (PLD) on dedicated single crystal silicon cantilevers, is independent of the in-plane orientation of cantilevers.

Relationship between the Ca/P ratio of hydroxyapatite thin films and the spatial energy distribution of the ablation laser in pulsed laser deposition

NARCIS (Netherlands)

Nishikawa, H.; Hasegawa, T; Miyake, A.; Tashiro, Y.; Hashimoto, Y.; Blank, David H.A.; Rijnders, Augustinus J.H.M.

2016-01-01

Variation of the Ca/P ratio in hydroxyapatite (Ca10(PO4)6(OH)2) thin films was studied in relation to the spot size of the ablation laser for two different spatial energy distributions in pulsed laser deposition. One energy distribution is the defocus method with a raw distribution and the other is

Optoelectronic Characterization of Ta-Doped ZnO Thin Films by Pulsed Laser Deposition.

Science.gov (United States)

Koo, Horng-Show; Peng, Jo-Chi; Chen, Mi; Chin, Hung-I; Chen, Jaw-Yeh; Wu, Maw-Kuen

2015-11-01

Transparent conductive oxide of Ta-doped ZnO (TZO) film with doping amount of 3.0 wt% have been deposited on glass substrates (Corning Eagle XG) at substrate temperatures of 100 to 500 degrees C by the pulsed laser deposition (PLD) technique. The effect of substrate temperature on the structural, optical and electronic characteristics of Ta-doped ZnO (TZO) films with 3.0 wt% dopant of tantalum oxide (Ta2O5) was measured and demonstrated in terms of X-ray diffraction (XRD), ultraviolet-visible spectrometer (UV-Vis), four-probe and Hall-effect measurements. X-ray diffraction pattern shows that TZO films grow in hexagonal crystal structure of wurtzite phase with a preferred orientation of the crystallites along (002) direction and exhibits better physical characteristics of optical transmittance, electrical conductivity, carrier concentration and mobility for the application of window layer in the optoelectronic devices of solar cells, OLEDs and LEDs. The lowest electrical resistivity (ρ) and the highest carrier concentration of the as-deposited film deposited at 300 degrees C are measured as 2.6 x 10(-3) Ω-cm and 3.87 x 10(-20) cm(-3), respectively. The highest optical transmittance of the as-deposited film deposited at 500 degrees C is shown to be 93%, compared with another films deposited below 300 degrees C. It is found that electrical and optical properties of the as-deposited TZO film are greatly dependent on substrate temperature during laser ablation deposition.

Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

DEFF Research Database (Denmark)

Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

2011-01-01

Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island...... formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature....

Improvement in the electronic quality of pulsed laser deposited CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films via post-deposition elemental sulfur annealing process

Energy Technology Data Exchange (ETDEWEB)

Beres, M., E-mail: matthewcberes@gmail.com [University of California, Department of Mechanical Engineering, 6141 Etcheverry Hall, Berkeley, CA 94720 (United States); Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); Yu, K.M., E-mail: kinmanyu@cityu.edu.hk [Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); City University of Hong Kong, Department of Physics and Materials Science, 83 Tat Chee Avenue, Kowloon, Hong Kong Special Administrative Region (Hong Kong); Syzdek, J., E-mail: jego.mejl@gmail.com [Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); Bio-Logic USA, 9050 Executive Park Dr NW, Knoxville, TN 37923 (United States); Mao, S.S., E-mail: ssmao@me.berkeley.edu [University of California, Department of Mechanical Engineering, 6141 Etcheverry Hall, Berkeley, CA 94720 (United States); Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States)

2016-06-01

We synthesized CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films on soda lime glass substrates using pulsed laser deposition and post-annealing under different conditions. Increasing substrate temperature during deposition and vacuum annealing after deposition both increased grain size but had negligible effect on the electronic properties of the films. As-deposited films demonstrated P-type conductivities with high carrier concentrations and low Hall mobilities, but annealing in elemental sulfur environment significantly improved the electronic properties of the films. We found that the incorporation of even small quantities of sulfur into the films reduced carrier concentrations by over three orders of magnitude and increased Hall mobilities by an order of magnitude. This resulted in films with resistivity ~ 5 Ω·cm suitable for photovoltaic applications. - Highlights: • CIGSe thin films were deposited by pulsed laser deposition. • Laser deposition parameters and annealing parameters were investigated. • As-deposited films demonstrated high hole concentrations and low Hall mobilities. • Elemental sulfur annealing significantly enhanced the electronic quality of films.

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

KAUST Repository

Sarath Kumar, S. R.; Nayak, Pradipta K.; Hedhili, Mohamed N.; Khan, M. A.; Alshareef, Husam N.

2013-01-01

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent

Histologic evaluation of laser lipolysis comparing continuous wave vs pulsed lasers in an in vivo pig model.

Science.gov (United States)

Levi, Jessica R; Veerappan, Anna; Chen, Bo; Mirkov, Mirko; Sierra, Ray; Spiegel, Jeffrey H

2011-01-01

To evaluate acute and delayed laser effects of subdermal lipolysis and collagen deposition using an in vivo pig model and to compare histologic findings in fatty tissue after continuous wave diode (CW) vs pulsed laser treatment. Three CW lasers (980, 1370, and 1470 nm) and 3 pulsed lasers (1064, 1320, and 1440 nm) were used to treat 4 Göttingen minipigs. Following administration of Klein tumescent solution, a laser cannula was inserted at the top of a 10 × 2.5-cm rectangle and was passed subdermally to create separate laser "tunnels." Temperatures at the surface and at intervals of 4-mm to 20-mm depths were recorded immediately after exposure and were correlated with skin injury. Full-thickness cutaneous biopsy specimens were obtained at 1 day, 1 week, and 1 month after exposure and were stained with hematoxylin-eosin and trichrome stain. Qualitative and semiquantitative histopathologic evaluations were performed with attention to vascular damage, lipolysis, and collagen deposition. Skin surface damage occurred at temperatures exceeding 46°C. Histologic examination at 1 day after exposure showed hemorrhage, fibrous collagen fiber coagulation, and adipocyte damage. Adipocytes surrounded by histiocytes, a marker of lipolysis, were present at 1 week and 1 month after exposure. Collagen deposition in subdermal fatty tissue and in reticular dermis of some specimens was noted at 1 week and had increased at 1 month. Tissue treated with CW laser at 1470 nm demonstrated greater hemorrhage and more histiocytes at damage sites than tissue treated with pulsed laser at 1440 nm. There was a trend toward more collagen deposition with pulsed lasers than with CW lasers, but this was not statistically significant. Histopathologic comparison between results of CW laser at 980 nm vs pulsed laser at 1064 nm showed the same trend. Hemorrhage differences may result from pulse duration variations. A theoretical calculation estimating temperature rise in vessels supported this

DEVICE FOR INVESTIGATION OF MAGNETRON AND PULSED-LASER PLASMA

Directory of Open Access Journals (Sweden)

A. P. Burmakov

2012-01-01

Full Text Available Various modifications of complex pulsed laser and magnetron deposition thin-film structures unit are presented. They include joint and separate variants of layer deposition. Unit realizes the plasma parameters control and enhances the possibility of laser-plasma and magnetron methods of coatings deposition.

Tight comparison of Mg and Y thin film photocathodes obtained by the pulsed laser deposition technique

Energy Technology Data Exchange (ETDEWEB)

Lorusso, A. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Solombrino, L. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping (Sweden); Perrone, A. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)

2016-11-11

In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y. - Highlights: • Mg and Y thin film photocathodes were successfully prepared by pulsed laser deposition. • Mg quantum efficiency is higher than Y, despite its higher work function. • The three-step model of Spicer justify the difference in quantum efficiency.

Effects of oxygen gas pressure on properties of iron oxide films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Guo, Qixin; Shi, Wangzhou; Liu, Feng; Arita, Makoto; Ikoma, Yoshifumi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro

2013-01-01

Highlights: ► Pulsed laser deposition is a promising technique for growing iron oxide films. ► Crystal structure of the iron oxide films strongly depends on oxygen gas pressure. ► Optimum of the oxygen gas pressure leads single phase magnetite films with high crystal quality. -- Abstract: Iron oxide films were grown on sapphire substrates by pulsed laser deposition at oxygen gas pressures between 1 × 10 −5 and 1 × 10 −1 Pa with a substrate temperature of 600 °C. Atomic force microscope, X-ray diffraction, Raman spectroscopy, X-ray absorption fine structure, and vibrational sample magnetometer analysis revealed that surface morphology and crystal structure of the iron oxide films strongly depend on the oxygen gas pressure during the growth and the optimum oxygen gas pressure range is very narrow around 1 × 10 −3 Pa for obtaining single phase magnetite films with high crystal quality

Optical Characterization of SERS Substrates Based on Porous Au Films Prepared by Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

V. V. Strelchuk

2015-01-01

Full Text Available The SERS (surface enhanced Raman spectroscopy substrates based on nanocomposite porous films with gold nanoparticles (Au NPs arrays were formed using the method of the pulsed laser deposition from the back low-energy flux of erosion torch particles on the glass substrate fixed at the target plain. The dependencies of porosity, and morphology of the surface of the film regions located near and far from the torch axis on the laser ablation regime, laser pulses energy density, their number, and argon pressure in the vacuum chamber, were ascertained. The Au NPs arrays with the controllable extinction spectra caused by the local surface plasmon resonance were prepared. The possibility of the formation of SERS substrates for the detection of the Rhodamine 6G molecules with the concentration 10−10 Mol/L with the enhancement factor 4·107 was shown.

Smooth silk fibroin nanofilm deposited by 1064-nm pulsed laser beam from an opaque target

International Nuclear Information System (INIS)

Nozaki, R.; Nakayama, S.; Senna, M.

2013-01-01

In an attempt to prepare smooth nanostructured thin films of silk fibroin (SF) by near-infrared (NIR) pulsed laser deposition, an opaque target was prepared from an emulsified aqueous solution of SF. Upon irradiation of 1064-nm pulsed laser beam at its fluence 5 J/cm 2 , a thin film of SF was deposited on the Si(100) substrate with its root-mean-square surface roughness, 0.37 nm, smoother than those obtained from a compressed target of SF powders by approximately an order of magnitude. The attainment of an extra-smooth film from the opaque target was discussed in terms of multiple Mie scattering of the incident NIR beam, leading to an increase in the plasma density, intensified optical breakdown, ablation of better dispersed SF molecular units, and a film with more intensive intermolecular cross-linking. - Highlights: • Thin film of silk fibroin with its RMS surface roughness, R rms , 0.37 nm was obtained. • The use of a target from an emulsified solution of SF was the key issue. • Mechanism involved was elucidated in terms of enhanced Mie scattering

Si nanostructures grown by picosecond high repetition rate pulsed laser deposition

International Nuclear Information System (INIS)

Pervolaraki, M.; Komninou, Ph.; Kioseoglou, J.; Athanasopoulos, G.I.; Giapintzakis, J.

2013-01-01

One-step growth of n-doped Si nanostructures by picosecond ultra fast pulsed laser deposition at 1064 nm is reported for the first time. The structure and morphology of the Si nanostructures were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Transmission electron microscopy studies revealed that the shape of the Si nanostructures depends on the ambient argon pressure. Fibrous networks, cauliflower formations and Si rectangular crystals grew when argon pressure of 300 Pa, 30 Pa and vacuum (10 −3 Pa) conditions were used, respectively. In addition, the electrical resistance of the vacuum made material was investigated

Si nanostructures grown by picosecond high repetition rate pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Pervolaraki, M., E-mail: pervolaraki@ucy.ac.cy [Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., PO Box 20537, 1678 Nicosia (Cyprus); Komninou, Ph.; Kioseoglou, J. [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Athanasopoulos, G.I. [Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., PO Box 20537, 1678 Nicosia (Cyprus); Giapintzakis, J., E-mail: giapintz@ucy.ac.cy [Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., PO Box 20537, 1678 Nicosia (Cyprus)

2013-08-01

One-step growth of n-doped Si nanostructures by picosecond ultra fast pulsed laser deposition at 1064 nm is reported for the first time. The structure and morphology of the Si nanostructures were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Transmission electron microscopy studies revealed that the shape of the Si nanostructures depends on the ambient argon pressure. Fibrous networks, cauliflower formations and Si rectangular crystals grew when argon pressure of 300 Pa, 30 Pa and vacuum (10{sup −3} Pa) conditions were used, respectively. In addition, the electrical resistance of the vacuum made material was investigated.

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

NARCIS (Netherlands)

Cillessen, J.F.M.; Prins, M.W.J.; Wolf, R.M.

1997-01-01

Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (Ec) which is comparable with values for

Decoration of silica nanowires with gold nanoparticles through ultra-short pulsed laser deposition

Science.gov (United States)

Gontad, F.; Caricato, A. P.; Cesaria, M.; Resta, V.; Taurino, A.; Colombelli, A.; Leo, C.; Klini, A.; Manousaki, A.; Convertino, A.; Rella, R.; Martino, M.; Perrone, A.

2017-10-01

The ablation of a metal target at laser energy densities in the range of 1-10 TW/cm2 leads to the generation of nanoparticles (NP) of the ablated material. This aspect is of particular interest if the immobilization of NPs on three-dimensional (3D) substrates is necessary as for example in sensing applications. In this work the deposition of Au NP by irradiation of a Au bulk target with a sub-picosecond laser beam (500 fs; 248 nm; 10 Hz) on 2D (silica and Si(100)) and 3D substrates (silica nanowire forests) is reported for different number of laser pulses (500, 1000, 1500, 2000, 2500). A uniform coverage of small Au NPs (with a diameter of few nm) on both kinds of substrates has been obtained using a suitable number of laser pulses. The presence of spherical droplets, with a diameter ranging from tens of nm up to few μm was also detected on the substrate surface and their presence can be explained by the weak electron-phonon coupling of Au. The optical characterization of the samples on 2D and 3D substrates evidenced the surface plasmon resonance peak characteristic of the Au NPs although further improvements of the size-distribution are necessary for future applications in sensing devices.

Visible and ultraviolet emission from pulse irradiated amorphous and polycrystalline H2O ice

International Nuclear Information System (INIS)

Freeman, C.G.; Quickenden, T.I.; Litjens, R.A.J.; Sangster, D.F.

1984-01-01

Luminescence peaking at 405 nm was observed when thin films of amorphous or polycrystalline ice at 97 K were irradiated with a pulsed beam of 0.53 MeV electrons. These emissions differed from the luminescence emitted by crystalline ice in that memory effects were not observed; the peak wavelengths were red shifted by approx.20 nm; and the half-lives were 6--9 ns instead of approx.400 ns. The emission spectra of polycrystalline ice samples produced by rapid deposition or by annealing amorphous ice were similar, but both had substantially lower intensities than amorphous ice spectra

Laser-induced chemical vapor deposition reactions

International Nuclear Information System (INIS)

Teslenko, V.V.

1990-01-01

The results of investigation of chemical reactions of deposition of different substances from the gas phase when using the energy of pulse quasicontinuous and continuous radiation of lasers in the wave length interval from 0.193 to 10.6 μm are generalized. Main attetion is paid to deposition of inorganic substances including nonmetals (C, Si, Ge and others), metals (Cu, Au, Zn, Cd, Al, Cr, Mo, W, Ni) and some simple compounds. Experimental data on the effect of laser radiation parameters and reagent nature (hydrides, halogenides, carbonyls, alkyl organometallic compounds and others) on the deposition rate and deposit composition are described in detail. Specific features of laser-chemical reactions of deposition and prospects of their application are considered

Ultraviolet pulsed laser irradiation of multi-walled carbon nanotubes in nitrogen atmosphere

Energy Technology Data Exchange (ETDEWEB)

Pérez del Pino, Ángel, E-mail: aperez@icmab.es; Cabana, Laura; Tobias, Gerard [Instituto de Ciencia de Materiales de Barcelona, Consejo Superior de Investigaciones Científicas (ICMAB-CSIC), Campus UAB, 08193 Bellaterra (Spain); György, Enikö [Instituto de Ciencia de Materiales de Barcelona, Consejo Superior de Investigaciones Científicas (ICMAB-CSIC), Campus UAB, 08193 Bellaterra (Spain); National Institute for Lasers, Plasma and Radiation Physics, P. O. Box MG 36, 76900 Bucharest V (Romania); Ballesteros, Belén [ICN2—Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain)

2014-03-07

Laser irradiation of randomly oriented multi-walled carbon nanotube (MWCNT) networks has been carried out using a pulsed Nd:YAG UV laser in nitrogen gas environment. The evolution of the MWCNT morphology and structure as a function of laser fluence and number of accumulated laser pulses has been studied using electron microscopies and Raman spectroscopy. The observed changes are discussed and correlated with thermal simulations. The obtained results indicate that laser irradiation induces very fast, high temperature thermal cycles in MWCNTs which produce the formation of different nanocarbon forms, such as nanodiamonds. Premelting processes have been observed in localized sites by irradiation at low number of laser pulses and low fluence values. The accumulation of laser pulses and the increase in the fluence cause the full melting and amorphization of MWCNTs. The observed structural changes differ from that of conventional high temperature annealing treatments of MWCNTs.

Modelling of Ne-like copper X-ray laser driven by 1.2 ps short pulse and 280 ps background pulse configuration

International Nuclear Information System (INIS)

Demir, A.; Kenar, N.; Goktas, H.; Tallents, G.J.

2004-01-01

Detailed simulations of Ne-like Cu x-ray laser are undertaken using the EHYBRID code. The atomic physics data are obtained using the Cowan code. The optimization calculations are performed in terms of the intensity of background and the time separation between the background and the short pulse. The optimum value is obtained for the conditions of a Nd:glass laser with 1.2 ps pulse at 4.4 x 10 15 W cm -2 irradiance pumping a plasma pre-formed by a 280 ps duration pulse at 5.4 x 10 12 W cm -2 with peak-to-peak pulse separation set at 300 ps. X-ray resonance lines between 6 A and 15 A emitted from copper plasmas have been simulated. Free-free and free-bound emission from the Si-, Al-, Mg-, Na-, Ne- and F-like ions is calculated in the simulation. (author)

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

Science.gov (United States)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

2012-11-01

The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

Deposition and Characterization of Hermetic, Biocompatible Thin Film Coatings for Implantable, Electrically Active Devices

Science.gov (United States)

Sweitzer, Robyn K.

Retinal prostheses may be used to support patients suffering from Age-related macular degeneration or retinitis pigmentosa. A hermetic encapsulation of the poly(imide )-based prosthesis is important in order to prevent the leakage of water and ions into the electric circuitry embedded in the poly(imide) matrix. The deposition of amorphous aluminum oxide (by sputtering) and diamond like carbon (by pulsed laser ablation and vacuum arc vapor deposition) were studied for the application in retinal prostheses. The resulting thin films were characterized for composition, thickness, adhesion and smoothness by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy, profilometry and light microscopy. Electrical stability was evaluated and found to be good. The as-deposited films prevented incursion of salinated fluids into the implant over two (2) three month trials soaking in normal saline at body temperature, Biocompatibility was tested in vivo by implanting coated specimen subretinally in the eye of Yucatan pigs. While amorphous aluminum oxide is more readily deposited with sufficient adhesion quality, biocompatibility studies showed a superior behavior of diamond-like carbon. Amorphous aluminum oxide had more adverse effects and caused more severe damage to the retinal tissue.

Chemical, mechanical, and tribological properties of pulsed-laser-deposited titanium carbide and vanadium carbide

International Nuclear Information System (INIS)

Krzanowski, J.E.; Leuchtner, R.E.

1997-01-01

The chemical, mechanical, and tribological properties of pulsed-laser-deposited TiC and VC films are reported in this paper. Films were deposited by ablating carbide targets using a KrF (λ = 248 nm) laser. Chemical analysis of the films by XPS revealed oxygen was the major impurity; the lowest oxygen concentration obtained in a film was 5 atom%. Oxygen was located primarily on the carbon sublattice of the TiC structure. The films were always substoichiometric, as expected, and the carbon in the films was identified primarily as carbidic carbon. Nanoindentation hardness tests gave values of 39 GPa for TiC and 26 GPa for VC. The friction coefficient for the TiC films was 0.22, while the VC film exhibited rapid material transfer from the steel ball to the substrate resulting in steel-on-steel tribological behavior

Experimental and numerical study of the chemical composition of WSex thin films obtained by pulsed laser deposition in vacuum and in a buffer gas atmosphere

International Nuclear Information System (INIS)

Grigoriev, S.N.; Fominski, V.Yu.; Gnedovets, A.G.; Romanov, R.I.

2012-01-01

WSe x thin films were obtained by pulsed laser deposition in vacuum and at various Ar gas pressures up to 10 Pa. Stoichiometry and chemical state of the WSe x films were studied by means of Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy. In the case of pulsed laser deposition of WSe x films in vacuum the value of stoichiometric coefficient x was 1.3. During the deposition in argon at pressures of 2-10 Pa the value of x varied from 1.5 to 2.2. To explain the influence of the buffer gas, a model was used that takes into account the following processes: (1) congruent pulsed laser evaporation of the WSe 2.2 target; (2) scattering of laser-evaporated W and Se atoms in Ar; (3) sputtering of the deposited film by high-energy atoms from the laser plume. Experimentally, the velocity distributions of laser-evaporated W and Se atoms in vacuum were determined by the time-of-flight measurements. Collision Monte Carlo simulations were used to quantify the impact of the buffer gas on the energy and the incidence angle distributions of the deposited W and Se atoms. Model distributions were used to determine the chemical composition of the WSe x films, depending on the efficiency of the preferential sputtering of Se atoms.

Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

KAUST Repository

Baras, Abdulaziz

2011-07-01

Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

KAUST Repository

Yang, Yang; Yao, Yingbang; Zhang, Q.; Zhang, Xixiang

2014-01-01

Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences

Inverted fractal analysis of TiO{sub x} thin layers grown by inverse pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Égerházi, L., E-mail: egerhazi.laszlo@gmail.com [University of Szeged, Faculty of Medicine, Department of Medical Physics and Informatics, Korányi fasor 9., H-6720 Szeged (Hungary); Smausz, T. [University of Szeged, Faculty of Science, Department of Optics and Quantum Electronics, Dóm tér 9., H-6720 Szeged (Hungary); Bari, F. [University of Szeged, Faculty of Medicine, Department of Medical Physics and Informatics, Korányi fasor 9., H-6720 Szeged (Hungary)

2013-08-01

Inverted fractal analysis (IFA), a method developed for fractal analysis of scanning electron microscopy images of cauliflower-like thin films is presented through the example of layers grown by inverse pulsed laser deposition (IPLD). IFA uses the integrated fractal analysis module (FracLac) of the image processing software ImageJ, and an objective thresholding routine that preserves the characteristic features of the images, independently of their brightness and contrast. IFA revealed f{sub D} = 1.83 ± 0.01 for TiO{sub x} layers grown at 5–50 Pa background pressures. For a series of images, this result was verified by evaluating the scaling of the number of still resolved features on the film, counted manually. The value of f{sub D} not only confirms the fractal structure of TiO{sub x} IPLD thin films, but also suggests that the aggregation of plasma species in the gas atmosphere may have only limited contribution to the deposition.

Pulsed laser deposited Pb(Zr,Ti)O3 thin films with excellent piezoelectric and mechanical properties

NARCIS (Netherlands)

Nazeer, H.; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Woldering, L.A.; Abelmann, Leon; Elwenspoek, Michael Curt

We present for the first time the combined measured piezoelectric and mechanical properties of epitaxial, (110) oriented Pb(ZrxTi1-x) (PZT) thin films grown on microfabricated silicon cantilevers using pulsed laser deposition (PLD, x=0.4, 0.52, 0.6 and 0.8). The grown PZT thin films develop a strong

Tracing the plasma interactions for pulsed reactive crossed-beam laser ablation

Science.gov (United States)

Chen, Jikun; Stender, Dieter; Pichler, Markus; Döbeli, Max; Pergolesi, Daniele; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas

2015-10-01

Pulsed reactive crossed-beam laser ablation is an effective technique to govern the chemical activity of plasma species and background molecules during pulsed laser deposition. Instead of using a constant background pressure, a gas pulse with a reactive gas, synchronized with the laser beam, is injected into vacuum or a low background pressure near the ablated area of the target. It intercepts the initially generated plasma plume, thereby enhancing the physicochemical interactions between the gaseous environment and the plasma species. For this study, kinetic energy resolved mass-spectrometry and time-resolved plasma imaging were used to study the physicochemical processes occurring during the reactive crossed beam laser ablation of a partially 18O substituted La0.6Sr0.4MnO3 target using oxygen as gas pulse. The characteristics of the ablated plasma are compared with those observed during pulsed laser deposition in different oxygen background pressures.

Post-annealing effects on pulsed laser deposition-grown GaN thin films

International Nuclear Information System (INIS)

Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

2015-01-01

In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

Structure and properties of TiC, VC, and TiC/VC thin films deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Krzanowski, J.E.; Leuchtner, R.E.

1996-01-01

A study has been conducted on the mechanical, tribological and chemical properties of pulsed laser deposited (PLD) TiC, VC and TiC/VC thin films. The TiC films were deposited at 375 C and 5 mTorr Ar, while the TiC/VC films were deposited from a composite target at 475 C at pressures of base vacuum and 50 mTorr Ar. XRD analysis revealed the films had the expected B1 structure, although XPS analysis showed a significant oxygen content. Tribological studies were conducted using a ball-on-disk test, and the wear behavior depended on the surface condition and film composition. One TiC/VC film exhibited little wear but caused significant ball wear, indicating mixed carbide films are promising candidates for wear-resistant coatings

One-pot synthesis and transfer of PMMA/Ag photonic nanocomposites by pulsed laser deposition

Science.gov (United States)

Karoutsos, V.; Koutselas, I.; Orfanou, P.; Mpatzaka, Th.; Vasileiadis, M.; Vassilakopoulou, A.; Vainos, N. A.; Perrone, A.

2015-08-01

Nanocomposite films comprising metallic nanoparticles in polymer matrices find increasing use in emerging photonic, electronic and microsystem applications owing to their tailored advanced functionalities. The versatile development of such films based on poly-methyl-methacrylate (PMMA) matrix having embedded Ag nanoparticles is addressed here. Two low-cost one-pot chemical methods for the synthesis of bulk target nanocomposite materials are demonstrated. These nanocomposites are subsequently transferred via pulsed laser deposition using 193 nm ArF excimer laser radiation, producing films maintaining the structural and functional properties. Both target- and laser-deposited materials have been thoroughly characterized using microscopic, spectroscopic and thermal analysis methods. Infrared spectra demonstrated the close molecular PMMA chain similarity for both target and film materials, though structural alterations identified by thermal analysis proved the enhanced characteristics of films grown. High-resolution electron microscopy proved the transfer of Ag nanoparticles sized 10-50 nm. Visible absorption peaked in the spectral range of 430-440 nm and attributed to the Ag nanocomposite plasmonic response verifying the transfer of the functional performance from target to film.

Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

International Nuclear Information System (INIS)

Munoz, D.; Voz, C.; Blanque, S.; Ibarz, D.; Bertomeu, J.; Alcubilla, R.

2009-01-01

In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρ c ∼ 10 mΩ cm 2 ) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

Transmission of reactive pulsed laser deposited VO{sub 2} films in the THz domain

Energy Technology Data Exchange (ETDEWEB)

Émond, Nicolas; Hendaoui, Ali; Ibrahim, Akram; Al-Naib, Ibraheem; Ozaki, Tsuneyuki; Chaker, Mohamed, E-mail: chaker@emt.inrs.ca

2016-08-30

Highlights: • Synthesis of vanadium dioxide (VO{sub 2}) thin films as a function of oxygen pressure (2–25 mTorr) using Reactive Pulsed Laser Deposition (RPLD). • Characterization of RPLD-grown VO{sub 2} thin films in the THz frequency range. • THz switches and/or sensors require VO{sub 2} films deposited at low oxygen pressure (i.e. low transition temperature, large amplitude contrast of THz transmission, narrow hysteresis width). • THz optical memory applications require VO{sub 2} films deposited at high oxygen pressure (broad hysteresis width). - Abstract: This work reports on the characteristics of the insulator-to-metal transition (IMT) of reactive pulsed laser deposited vanadium dioxide (VO{sub 2}) films in the terahertz (THz) frequency range, namely the transition temperature T{sub IMT}, the amplitude contrast of the THz transmission over the IMT ΔA, the transition sharpness ΔT and the hysteresis width ΔH. XRD analysis shows the sole formation of VO{sub 2} monoclinic structure with an enhancement of (011) preferential orientation when varying the O{sub 2} pressure (P{sub O2}) during the deposition process from 2 to 25 mTorr. THz transmission measurements as a function of temperature reveal that VO{sub 2} films obtained at low P{sub O2} exhibit low T{sub IMT}, large ΔA, and narrow ΔH. Increasing P{sub O2} results in VO{sub 2} films with higher T{sub IMT}, smaller ΔA, broader ΔH and asymmetric hysteresis loop. The good control of the VO{sub 2} IMT features in the THz domain could be further exploited for the development of advanced smart devices, such as ultrafast switches, modulators, memories and sensors.

Optoelectronic study and annealing stability of room temperature pulsed laser ablated ZnSe polycrystalline thin films

Energy Technology Data Exchange (ETDEWEB)

Khan, Taj Muhammad, E-mail: tajakashne@gmail.com; Zakria, M.; Ahmad, Mushtaq; Shakoor, Rana I.

2014-03-15

In principal, we described stability of the room temperature ZnSe thin films with thermal annealing deposited onto glass by pulsed laser deposition technique using third harmonic 355 nm of Nd: YAG laser beam. Optoelectronic analysis and stability with thermal annealing was described in terms of structural and optical properties. These properties were investigated via X-ray diffraction, atomic force microscope, scanning electron microscope, Raman, Fourier transform infrared and photoluminescence spectroscopies. From the strong reflection corresponding to the (1 1 1) plane (2θ=27.48°) and the longitudinal optical “LO” phonon modes at 250 cm{sup −1} and 500 cm{sup −1} in the X-ray diffraction and Raman spectra, a polycrystalline zincblende structure of the film was established. At 300 and 350 °C annealing temperatures, the film crystallites were preferentially oriented with the (1 1 1) plane parallel to the substrate and became amorphous at 400 °C. Atomic force microscopic images showed that the morphologies of ZnSe films became smooth with root mean squared roughness 9.86 nm after annealing at 300 and 350 °C while a rougher surface was observed for the amorphous film at 400 °C. Fourier transform infrared study illustrated the chemical nature and Zn–Se bonding in the deposited films. For the as-deposited and annealed samples at 300 and 350 °C, scanning electron micrographs revealed mono-dispersed indistinguishable ZnSe grains and smooth morphological structure which changed to a cracking and bumpy surface after annealing at 400 °C. The physical phenomenon of annealing induced morphological changes could be explained in terms of “structure zone model”. Excitonic emission at 456 nm was observed for both as-deposited and annealed film at 350 °C. The transmission spectrum shows oscillatory behavior because of the thin film interference and exhibited a high degree of transparency down to a wavelength ∼500 nm in the IR region. Energy band-gap was

Optical properties and surface characterization of pulsed laser-deposited Cu2ZnSnS4 by spectroscopic ellipsometry

International Nuclear Information System (INIS)

Crovetto, Andrea; Cazzaniga, Andrea; Ettlinger, Rebecca B.; Schou, Jørgen; Hansen, Ole

2015-01-01

Cu 2 ZnSnS 4 films prepared by pulsed laser deposition at different temperatures are characterized by spectroscopic ellipsometry. The focus is on confirming results from direct measurement techniques, by finding appropriate models of the surface overlayer for data fitting, and extracting the dielectric function of the films. It is found that the surface overlayer changes with film thickness and deposition temperature. Adopting different ellipsometry measurements and modeling strategies for each film, dielectric functions are extracted and compared. As the deposition temperature is increased, the dielectric functions exhibit additional critical points related to optical transitions in the material other than absorption across the fundamental band gap. In the case of a thin film < 200 nm thick, surface features observed by scanning electron microscopy and atomic force microscopy are accurately reproduced by ellipsometry data fitting. - Highlights: • Inhomogeneous Cu 2 ZnSnS 4 films are prepared by pulsed laser deposition. • The film surface includes secondary phases and topographic structures. • We model a film surface layer that fits ellipsometry data. • Ellipsometry data fits confirm results from direct measurement techniques. • We obtain the dielectric function of inhomogeneous Cu 2 ZnSnS 4 films

Pulsed laser deposition of YBCO films on ISD MgO buffered metal tapes

CERN Document Server

Ma, B; Koritala, R E; Fisher, B L; Markowitz, A R; Erck, R A; Baurceanu, R; Dorris, S E; Miller, D J; Balachandran, U

2003-01-01

Biaxially textured magnesium oxide (MgO) films deposited by inclined-substrate deposition (ISD) are desirable for rapid production of high-quality template layers for YBCO-coated conductors. High-quality YBCO films were grown on ISD MgO buffered metallic substrates by pulsed laser deposition (PLD). Columnar grains with a roof-tile surface structure were observed in the ISD MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD MgO films are tilted at an angle from the substrate normal. A small full-width at half maximum (FWHM) of approx 9deg was observed in the phi-scan for ISD MgO films deposited at an inclination angle of 55deg . In-plane texture in the ISD MgO films developed in the first approx 0.5 mu m from the substrate surface, and then stabilized with further increases in film thickness. Yttria-stabilized zirconia and ceria buffer layers were deposited on the ISD MgO grown on metallic substrates prior to the deposition of YBCO by PLD. YBCO films with the c-axis parallel to the...

Pulsed Laser Cladding of Ni Based Powder

Science.gov (United States)

Pascu, A.; Stanciu, E. M.; Croitoru, C.; Roata, I. C.; Tierean, M. H.

2017-06-01

The aim of this paper is to optimize the operational parameters and quality of one step Metco Inconel 718 atomized powder laser cladded tracks, deposited on AISI 316 stainless steel substrate by means of a 1064 nm high power pulsed laser, together with a Precitec cladding head manipulated by a CLOOS 7 axes robot. The optimization of parameters and cladding quality has been assessed through Taguchi interaction matrix and graphical output. The study demonstrates that very good cladded layers with low dilution and increased mechanical proprieties could be fabricated using low laser energy density by involving a pulsed laser.

Optical Properties of Nitrogen-Substituted Strontium Titanate Thin Films Prepared by Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Alexander Wokaun

2009-09-01

Full Text Available Perovskite-type N-substituted SrTiO3 thin films with a preferential (001 orientation were grown by pulsed laser deposition on (001-oriented MgO and LaAlO3 substrates. Application of N2 or ammonia using a synchronized reactive gas pulse produces SrTiO3-x:Nx films with a nitrogen content of up to 4.1 at.% if prepared with the NH3 gas pulse at a substrate temperature of 720 °C. Incorporating nitrogen in SrTiO3 results in an optical absorption at 370-460 nm associated with localized N(2p orbitals. The estimated energy of these levels is ≈2.7 eV below the conduction band. In addition, the optical absorption increases gradually with increasing nitrogen content.

Tracing the plasma interactions for pulsed reactive crossed-beam laser ablation

Energy Technology Data Exchange (ETDEWEB)

Chen, Jikun; Stender, Dieter; Pichler, Markus; Pergolesi, Daniele; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas, E-mail: thomas.lippert@psi.ch [General Energy Research Department, Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland); Döbeli, Max [Ion Beam Physics, ETH Zurich, CH-8093 Zurich (Switzerland)

2015-10-28

Pulsed reactive crossed-beam laser ablation is an effective technique to govern the chemical activity of plasma species and background molecules during pulsed laser deposition. Instead of using a constant background pressure, a gas pulse with a reactive gas, synchronized with the laser beam, is injected into vacuum or a low background pressure near the ablated area of the target. It intercepts the initially generated plasma plume, thereby enhancing the physicochemical interactions between the gaseous environment and the plasma species. For this study, kinetic energy resolved mass-spectrometry and time-resolved plasma imaging were used to study the physicochemical processes occurring during the reactive crossed beam laser ablation of a partially {sup 18}O substituted La{sub 0.6}Sr{sub 0.4}MnO{sub 3} target using oxygen as gas pulse. The characteristics of the ablated plasma are compared with those observed during pulsed laser deposition in different oxygen background pressures.

The simultaneous generation of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a graphene saturable absorber

Science.gov (United States)

Wang, Zhenhong; Wang, Zhi; Liu, Yan-ge; He, Ruijing; Wang, Guangdou; Yang, Guang; Han, Simeng

2018-05-01

We experimentally report the coexistence of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a microfiber-based graphene saturable absorber. The soliton bunches, like isolated spikes with extreme amplitude and ultrashort duration, randomly generate in the background of the Q-switched-like pulses. The soliton bunches have some pulse envelopes in which pulses operate at a fundamental repetition rate in the temporal domain. Further investigation shows that the composite pulses are highly correlated with the noise-like pulses. Our work can make a further contribution to enrich the understanding of the nonlinear dynamics in fiber lasers.

Microstructural and mechanical characterization of laser deposited advanced materials

Science.gov (United States)

Sistla, Harihar Rakshit

Additive manufacturing in the form of laser deposition is a unique way to manufacture near net shape metallic components from advanced materials. Rapid solidification facilitates the extension of solid solubility, compositional flexibility and decrease in micro-segregation in the melt among other advantages. The current work investigates the employment of laser deposition to fabricate the following: 1. Functionally gradient materials: This allows grading dissimilar materials compositionally to tailor specific properties of both these materials into a single component. Specific compositions of the candidate materials (SS 316, Inconel 625 and Ti64) were blended and deposited to study the brittle intermetallics reported in these systems. 2. High entropy alloys: These are multi- component alloys with equiatomic compositions of 5 or more elements. The ratio of Al to Ni was decreased to observe the transition of solid solution from a BCC to an FCC crystal structure in the AlFeCoCrNi system. 3. Structurally amorphous alloys: Zr-based metallic glasses have been reported to have high glass forming ability. These alloys have been laser deposited so as to rapidly cool them from the melt into an amorphous state. Microstructural analysis and X-ray diffraction were used to study the phase formation, and hardness was measured to estimate the mechanical properties.

Formation of metal nanoparticles of various sizes in plasma plumes produced by Ti:sapphire laser pulses

International Nuclear Information System (INIS)

Chakravarty, U.; Naik, P. A.; Mukherjee, C.; Kumbhare, S. R.; Gupta, P. D.

2010-01-01

In this paper, an experimental study on generation of nanoparticle various sizes using Ti:sapphire laser pulses, is reported. Nanoparticle formation in plasma plumes of metals like silver and copper, expanding in vacuum, has been studied using stretched pulses of 300 ps duration [subnanoseconds (sub-ns)] from a Ti:sapphire laser. It has been compared with the nanoparticle formation (of the same materials) when compressed pulses of 45 fs duration were used under similar focusing conditions. Nanoparticle formation is observed at intensities as high as 2x10 16 W/cm 2 . The structural analysis of the nanoparticle deposition on a silicon substrate showed that, using 45 fs pulses, smaller nanoparticles of average size ∼20 nm were generated, whereas on using the sub-ns pulses, larger particles were produced. Also, the visible light transmission and reflection from the nanoparticle film of Ag on glass substrate showed surface plasmon resonance (SPR). The SPR curves of the films of nanoparticles deposited by femtosecond pulses were always broader and reflection/transmission was always smaller when compared with the films formed using the sub-ns pulses, indicating smaller size particle formation by ultrashort pulses. Thus, it has been demonstrated that variation in the laser pulse duration of laser offers a simple tool for varying the size of the nanoparticles generated in plasma plumes.

Deposition of superconducting (Cu, C)-Ba-O films by pulsed laser deposition at moderate temperature

International Nuclear Information System (INIS)

Yamamoto, Tetsuro; Kikunaga, Kazuya; Obara, Kozo; Terada, Norio; Kikuchi, Naoto; Tanaka, Yasumoto; Tokiwa, Kazuyasu; Watanabe, Tsuneo; Sundaresan, Athinarayanan; Shipra

2007-01-01

Superconducting (Cu, C)-Ba-O thin films have been epitaxially grown on (100) SrTiO 3 at a low growth temperature of 500-600 deg. C by pulsed laser deposition. The dependences of their crystallinity and transport properties on preparation conditions have been investigated in order to clarify the dominant parameters for carbon incorporation and the emergence of superconductivity. It has been revealed that the CO 3 content in the films increases with increasing both the parameters of partial pressure of CO 2 during film growth and those of growth rate and enhancement of superconducting properties. The present study has also revealed that the structural and superconducting properties of the (Cu, C)-Ba-O films are seriously deteriorated by the irradiation of energetic particles during deposition. Suppression of the radiation damage is another key for a high and uniform superconducting transition. By these optimizations, a superconducting onset temperature above 50 K and a zero-resistance temperature above 40 K have been realized

Rewritable phase-change optical recording in Ge2Sb2Te5 films induced by picosecond laser pulses

International Nuclear Information System (INIS)

Siegel, J.; Schropp, A.; Solis, J.; Afonso, C.N.; Wuttig, M.

2004-01-01

The phase transformation dynamics induced in Ge 2 Sb 2 Te 5 films by picosecond laser pulses were studied using real-time reflectivity measurements with subnanosecond resolution. Evidence was found that the thermal diffusivity of the substrate plays a crucial role in determining the ability of the films to crystallize and amorphize. A film/substrate configuration with optimized heat flow conditions for ultrafast phase cycling with picosecond laser pulses was designed and produced. In this system, we achieved reversible phase transformations with large optical contrast (>20%) using single laser pulses with a duration of 30 ps within well-defined fluence windows. The amorphization (writing) process is completed within less than 1 ns, whereas crystallization (erasing) needs approximately 13 ns to be completed

Modeling of thermal, electronic, hydrodynamic, and dynamic deposition processes for pulsed-laser deposition of thin films

International Nuclear Information System (INIS)

Liu, C.L.; LeBoeuf, J.N.; Wood, R.F.; Geohegan, D.B.; Donato, J.M.; Chen, K.R.; Puretzky, A.A.

1994-11-01

Various physical processes during laser ablation of solids for pulsed-laser deposition (PLD) are studied using a variety of computational techniques. In the course of the authors combined theoretical and experimental effort, they have been trying to work on as many aspects of PLD processes as possible, but with special focus on the following areas: (a) the effects of collisional interactions between the particles in the plume and in the background on the evolving flow field and on thin film growth, (b) interactions between the energetic particles and the growing thin films and their effects on film quality, (c) rapid phase transformations through the liquid and vapor phases under possibly nonequilibrium thermodynamic conditions induced by laser-solid interactions, (d) breakdown of the vapor into a plasma in the early stages of ablation through both electronic and photoionization processes, (c) hydrodynamic behavior of the vapor/plasma during and after ablation. The computational techniques used include finite difference (FD) methods, particle-in-cell model, and atomistic simulations using molecular dynamics (MD) techniques

Superhard carbon film deposition by means of Laser-Arco {sup registered} on the way from the laboratory into the industrial series coating; Abscheidung superharter Kohlenstoffschichten mittels Laser-Arco {sup registered} auf dem Weg vom Labor in die industrielle Serienfertigung

Energy Technology Data Exchange (ETDEWEB)

Scheibe, Hans-Joachim; Leonhardt, Michael; Leson, Andreas; Meyer, Carl-Friedrich; Stucky, Thomas; Weihnacht, Volker [Fraunhofer-Institut fuer Werkstoff- und Strahltechnik (IWS), Dresden (Germany)

2008-12-15

Diamond-like carbon films (DLC) are more and more applied as wear protection coatings for components and tools due to their unique combination of high hardness, low friction and sticking tendency to metallic counter bodies. Up to now applied DLC films are hydrogen containing (a-C:H) or metal carbon films (Me-C:H) deposited by a plasma assisted CVD process from carbon-hydrogen gas mixtures. Their wide industrial effort results from that the can be deposited with slowly modified coating machines for classical hard coating (e.g. TiN or CrN). A new generation DLC films are the hydrogen-free ta-C films (ta-C = tetrahedral bounded amorphous carbon) with a between two and three-times higher hardness and with a resulting higher wear resistance under extreme condition than classical DLC films. They have excellent emergency running properties at lubrication break down. Their industrial application is more difficult due to that they cannot deposited with modified coating machines for classical hard and DLC coating and a new technology with corresponding equipment was not available up to now. The laser controlled, pulsed arc deposition technology (Laser-Arco {sup registered}) of the Fraunhofer IWS Dresden has this potential. In kind of a Laser-Arc-Module-source the ta-C film deposition can be integrated in every industrial used deposition machine. (orig.)

Templated synthesis of gold-iron alloy nanoparticles using pulsed laser deposition

International Nuclear Information System (INIS)

Chang, Won-Suk; Park, Jin-Won; Rawat, Vijay; Sands, Timothy; Lee, Gil U

2006-01-01

A means for synthesizing paramagnetic nanoparticles composed of an Au-Fe alloy is described using pulsed laser deposition (PLD) of the alloy into a mesoporous alumina membrane template. Nanoparticles 46 ± 13 nm in diameter and composed of a 17% Fe alloy have been created by depositing a 35% Fe alloy into a template with 65 nm diameter pores. These paramagnetic nanoparticles had a saturation magnetization of 11.5 emu g -1 at 2000 G, and their UV-visible extinction spectrum was dominated by strong absorption similar to that of Fe 3 O 4 nanoparticles. The surfaces of these nanoparticles were readily functionalized with a dense monolayer of DNA oligonucleotides that had a 5' thiol group. The Au-Fe nanoparticles appear to be well suited for biotechnological applications and single molecule measurements as they can be synthesized in a specific size range, are strongly paramagnetic, and may be easily functionalized with biological macromolecules

Apparatus and method for pulsed laser deposition of materials on wires and pipes

Science.gov (United States)

Fernandez, Felix E.

2003-01-01

Methods and apparatuses are disclosed which allow uniform coatings to be applied by pulsed laser deposition (PLD) on inner and outer surfaces of cylindrical objects, such as rods, pipes, tubes, and wires. The use of PLD makes this technique particularly suitable for complex multicomponent materials, such as superconducting ceramics. Rigid objects of any length, i.e., pipes up to a few meters, and with diameters from less than 1 centimeter to over 10 centimeters can be coated using this technique. Further, deposition is effected simultaneously onto an annular region of the pipe wall. This particular arrangement simplifies the apparatus, reduces film uniformity control difficulties, and can result in faster operation cycles. In addition, flexible wires of any length can be continuously coated using the disclosed invention.

Structural and optical properties of surface-hydrogenated silicon nanocrystallites prepared by reactive pulsed laser ablation

International Nuclear Information System (INIS)

Makino, Toshiharu; Inada, Mitsuru; Umezu, Ikurou; Sugimura, Akira

2005-01-01

Pulsed laser ablation (PLA) in an inert background gas is a promising technique for preparing Si nanoparticles. Although an inert gas is appropriate for preparing pure material, a reactive background gas can be used to prepare compound nanoparticles. We performed PLA in hydrogen gas to prepare hydrogenated silicon nanoparticles. The mean diameter of the primary particles measured using transmission electron microscopy was approximately 5 nm. The hydrogen content in the deposits was very high and estimated to be about 20%. The infrared absorption corresponding to Si-H n (n = 1, 2, 3) bonds on the surface were observed at around 2100 cm -1 . The Raman scattering peak corresponding to crystalline Si was observed, and that corresponding to amorphous Si was negligibly small. These results indicate that the Si nanoparticles were not an alloy of Si and hydrogen but Si nanocrystallite (nc-Si) covered by hydrogen or hydrogenated amorphous silicon. This means that PLA in reactive H 2 gas is a promising technique for preparing surface passivated nc-Si. The deposition mechanism and optical properties of the surface passivated silicon nanocrystallites are discussed

Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

International Nuclear Information System (INIS)

Cao, B Q; Lorenz, M; Rahm, A; Wenckstern, H von; Czekalla, C; Lenzner, J; Benndorf, G; Grundmann, M

2007-01-01

Phosphorus-doped ZnO (ZnO:P) nanowires were successfully prepared by a novel high-pressure pulsed-laser deposition process using phosphorus pentoxide as the dopant source. Detailed cathodoluminescence studies of single ZnO:P nanowires revealed characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission (A 0 , X, 3.356 eV), free-to-neutral-acceptor emission (e, A 0 , 3.314 eV), and donor-to-acceptor pair emission (DAP, ∼3.24 and ∼3.04 eV). This means that stable acceptor levels with a binding energy of about 122 meV have been induced in the nanowires by phosphorus doping. Moreover, the induced acceptors are distributed homogeneously along the doped nanowires

Uniform thin films of TiO2 nanoparticles deposited by matrix-assisted pulsed laser evaporation

International Nuclear Information System (INIS)

Caricato, A.P.; Manera, M.G.; Martino, M.; Rella, R.; Romano, F.; Spadavecchia, J.; Tunno, T.; Valerini, D.

2007-01-01

We report morphological and optical properties of a colloidal TiO 2 nanoparticle film, deposited on a quartz substrate by using the Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Atomic Force Microscopy demonstrated that a good uniformity of the deposition can be obtained. The presence of agglomerates with dimensions of about 1 μm in size was noticed. Form UV-vis transmission spectra, recorded in the 200-800 nm range, the optical constants and the energy gap were determined besides the film thickness. The optical constants resulted in agreement with the values reported in literature for TiO 2 nanoparticle thin films

Effects of an external magnetic field in pulsed laser deposition

Science.gov (United States)

García, T.; de Posada, E.; Villagrán, M.; Ll, J. L. Sánchez; Bartolo-Pérez, P.; Peña, J. L.

2008-12-01

Thin films were grown by pulsed laser deposition, PLD, on Si (1 0 0) substrates by the ablation of a sintered ceramic SrFe 12O 19 target with and without the presence of a nonhomogeneous magnetic field of μ0H = 0.4 T perpendicular to substrate plane and parallel to the plasma expansion axis. The field was produced by a rectangular-shaped Nd-Fe-B permanent magnet and the substrate was just placed on the magnet surface (Aurora method). An appreciable increment of optical emission due to the presence of the magnetic field was observed, but no film composition change or thickness increment was obtained. It suggests that the increment of the optical emission is due mainly to the electron confinement rather than confinement of ionic species.

Effects of an external magnetic field in pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Garcia, T. [Universidad Autonoma de la Ciudad de Mexico (UACM), Prolongacion San Isidro 151, Col. San Lorenzo Tezonco, C.P. 09790, Mexico DF (Mexico)], E-mail: tupacgarcia@yahoo.com; Posada, E. de [CINVESTAV-IPN Unidad Merida, Applied Physics Department, A.P. 73, Cordemex, C.P. 97130 Merida, Yuc. (Mexico); Villagran, M. [CCADET, Universidad Nacional Autonoma de Mexico (UNAM), A.P. 70-186, C.P. 04510, Mexico DF (Mexico); Ll, J.L. Sanchez [Laboratorio de Magnetismo, Facultad de Fisica-IMRE, Universidad de La Habana, La Habana 10400 (Cuba); Bartolo-Perez, P.; Pena, J.L. [CINVESTAV-IPN Unidad Merida, Applied Physics Department, A.P. 73, Cordemex, C.P. 97130 Merida, Yuc. (Mexico)

2008-12-30

Thin films were grown by pulsed laser deposition, PLD, on Si (1 0 0) substrates by the ablation of a sintered ceramic SrFe{sub 12}O{sub 19} target with and without the presence of a nonhomogeneous magnetic field of {mu}{sub 0}H = 0.4 T perpendicular to substrate plane and parallel to the plasma expansion axis. The field was produced by a rectangular-shaped Nd-Fe-B permanent magnet and the substrate was just placed on the magnet surface (Aurora method). An appreciable increment of optical emission due to the presence of the magnetic field was observed, but no film composition change or thickness increment was obtained. It suggests that the increment of the optical emission is due mainly to the electron confinement rather than confinement of ionic species.

Large-area homogeneous periodic surface structures generated on the surface of sputtered boron carbide thin films by femtosecond laser processing

Energy Technology Data Exchange (ETDEWEB)

Serra, R., E-mail: ricardo.serra@dem.uc.pt [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, 3030-788 Coimbra (Portugal); Oliveira, V. [ICEMS-Instituto de Ciência e Engenharia de Materiais e Superfícies, Avenida Rovisco Pais no 1, 1049-001 Lisbon (Portugal); Instituto Superior de Engenharia de Lisboa, Avenida Conselheiro Emídio Navarro no 1, 1959-007 Lisbon (Portugal); Oliveira, J.C. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, 3030-788 Coimbra (Portugal); Kubart, T. [The Ångström Laboratory, Solid State Electronics, P.O. Box 534, SE-751 21 Uppsala (Sweden); Vilar, R. [Instituto Superior de Engenharia de Lisboa, Avenida Conselheiro Emídio Navarro no 1, 1959-007 Lisbon (Portugal); Instituto Superior Técnico, Avenida Rovisco Pais no 1, 1049-001 Lisbon (Portugal); Cavaleiro, A. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, 3030-788 Coimbra (Portugal)

2015-03-15

Highlights: • Large-area LIPSS were formed by femtosecond laser processing B-C films surface. • The LIPSS spatial period increases with laser fluence (140–200 nm). • Stress-related sinusoidal-like undulations were formed on the B-C films surface. • The undulations amplitude (down to a few nanometres) increases with laser fluence. • Laser radiation absorption increases with surface roughness. - Abstract: Amorphous and crystalline sputtered boron carbide thin films have a very high hardness even surpassing that of bulk crystalline boron carbide (≈41 GPa). However, magnetron sputtered B-C films have high friction coefficients (C.o.F) which limit their industrial application. Nanopatterning of materials surfaces has been proposed as a solution to decrease the C.o.F. The contact area of the nanopatterned surfaces is decreased due to the nanometre size of the asperities which results in a significant reduction of adhesion and friction. In the present work, the surface of amorphous and polycrystalline B-C thin films deposited by magnetron sputtering was nanopatterned using infrared femtosecond laser radiation. Successive parallel laser tracks 10 μm apart were overlapped in order to obtain a processed area of about 3 mm{sup 2}. Sinusoidal-like undulations with the same spatial period as the laser tracks were formed on the surface of the amorphous boron carbide films after laser processing. The undulations amplitude increases with increasing laser fluence. The formation of undulations with a 10 μm period was also observed on the surface of the crystalline boron carbide film processed with a pulse energy of 72 μJ. The amplitude of the undulations is about 10 times higher than in the amorphous films processed at the same pulse energy due to the higher roughness of the films and consequent increase in laser radiation absorption. LIPSS formation on the surface of the films was achieved for the three B-C films under study. However, LIPSS are formed under

Large-area homogeneous periodic surface structures generated on the surface of sputtered boron carbide thin films by femtosecond laser processing

International Nuclear Information System (INIS)

Serra, R.; Oliveira, V.; Oliveira, J.C.; Kubart, T.; Vilar, R.; Cavaleiro, A.

2015-01-01

Highlights: • Large-area LIPSS were formed by femtosecond laser processing B-C films surface. • The LIPSS spatial period increases with laser fluence (140–200 nm). • Stress-related sinusoidal-like undulations were formed on the B-C films surface. • The undulations amplitude (down to a few nanometres) increases with laser fluence. • Laser radiation absorption increases with surface roughness. - Abstract: Amorphous and crystalline sputtered boron carbide thin films have a very high hardness even surpassing that of bulk crystalline boron carbide (≈41 GPa). However, magnetron sputtered B-C films have high friction coefficients (C.o.F) which limit their industrial application. Nanopatterning of materials surfaces has been proposed as a solution to decrease the C.o.F. The contact area of the nanopatterned surfaces is decreased due to the nanometre size of the asperities which results in a significant reduction of adhesion and friction. In the present work, the surface of amorphous and polycrystalline B-C thin films deposited by magnetron sputtering was nanopatterned using infrared femtosecond laser radiation. Successive parallel laser tracks 10 μm apart were overlapped in order to obtain a processed area of about 3 mm 2 . Sinusoidal-like undulations with the same spatial period as the laser tracks were formed on the surface of the amorphous boron carbide films after laser processing. The undulations amplitude increases with increasing laser fluence. The formation of undulations with a 10 μm period was also observed on the surface of the crystalline boron carbide film processed with a pulse energy of 72 μJ. The amplitude of the undulations is about 10 times higher than in the amorphous films processed at the same pulse energy due to the higher roughness of the films and consequent increase in laser radiation absorption. LIPSS formation on the surface of the films was achieved for the three B-C films under study. However, LIPSS are formed under different

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

International Nuclear Information System (INIS)

Perez, J A; Riascos, H; Caicedo, J C; Cabrera, G; Yate, L

2011-01-01

AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

Energy Technology Data Exchange (ETDEWEB)

Perez, J A; Riascos, H [Departamento de Fisica, Universidad Tecnologica de Pereira, Grupo plasma Laser y Aplicaciones A.A 097 (Colombia); Caicedo, J C [Grupo pelIculas delgadas, Universidad del Valle, Cali (Colombia); Cabrera, G; Yate, L, E-mail: jcaicedoangulo@gmail.com [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain)

2011-01-01

AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser ({lambda} = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

The influence of substrate temperature and deposition pressure on pulsed laser deposited thin films of CaS:Eu{sup 2+} phosphors

Energy Technology Data Exchange (ETDEWEB)

Nyenge, R.L. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Physics Department, Kenyatta University, P.O. Box 43844-0100, Nairobi (Kenya); Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Ntwaeaborwa, O.M., E-mail: ntwaeab@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa)

2016-01-01

The aim of this study was to investigate the influence of substrate temperature and argon deposition pressure on the structure, morphology and photoluminescence emission (PL) properties of pulsed laser deposited thin films of CaS:Eu{sup 2+}. The PL intensity improved significantly upon reaching substrate temperature of 650 °C. The (200) peak gradually became the preferred orientation. The increase in PL intensity as well as surface roughness is attributed to improved crystallinity and higher growth rates, respectively. The best PL intensity as a function of deposition pressure was obtained at an argon pressure of 80 mTorr. The initial increase and eventual drop in PL intensity as deposition pressure increases is ascribed to the changes in growth rates.

Broadband single-transverse-mode fluorescence sources based on ribs fabricated in pulsed laser deposited Ti: sapphire waveguides

NARCIS (Netherlands)

Grivas, C.; May-Smith, T.C.; Shepherd, D.P.; Eason, R.W.; Pollnau, Markus; Jelinek, M.

2004-01-01

Active rib waveguides with depths and widths varying from 3 to 5 μm and from 9 to 24 μm, respectively, have been structured by $Ar^{+}$-beam etching in pulsed laser deposited Ti:sapphire layers. Losses in the channel structures were essentially at the same levels as the unstructured planar waveguide

ITO thin films deposited by advanced pulsed laser deposition

International Nuclear Information System (INIS)

Viespe, Cristian; Nicolae, Ionut; Sima, Cornelia; Grigoriu, Constantin; Medianu, Rares

2007-01-01

Indium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive and homogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature (RT)-180 deg. C), pressure (1-6 x 10 -2 Torr), laser fluence (1-4 J/cm 2 ) and wavelength (266-355 nm) on the film properties. The deposition rate, roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness 100-600 nm, roughness 5-10 nm) between RT and 180 deg. C on a large area (5 x 5 cm 2 ). The films have electrical resistivity of 8 x 10 -4 Ω cm at RT, 5 x 10 -4 Ω cm at 180 deg. C and an optical transmission in the visible range, around 89%

Research Progress on Laser Cladding Amorphous Coatings on Metallic Substrates

Directory of Open Access Journals (Sweden)

CHEN Ming-hui

2017-01-01

Full Text Available The microstructure and property of amorphous alloy as well as the limitations of the traditional manufacturing methods for the bulk amorphous alloy were briefly introduced in this paper.Combined with characteristics of the laser cladding technique,the research status of the laser cladding Fe-based,Zr-based,Ni-based,Cu-based and Al-based amorphous coatings on the metal substrates were mainly summarized.The effects of factors such as laser processing parameter,micro-alloying element type and content and reinforcing phase on the laser cladding amorphous coatings were also involved.Finally,the main problems and the future research directions of the composition design and control of the laser-cladded amorphous coating,the design and optimization of the laser cladding process,and the basic theory of the laser cladding amorphous coatings were also put forward finally.

Compositional dependence of the Young's modulus and piezoelectric coefficient of (110)-oriented pulsed laser deposited PZT thin films

NARCIS (Netherlands)

Nazeer, H.; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Sardan Sukas, Ö.; Abelmann, Leon; Elwenspoek, Michael Curt

2014-01-01

In this contribution, we report on the compositional dependence of the mechanical and piezoelectric properties of Pb(ZrₓTi₿₋ₓ)O₃ (PZT) thin films fabricated by pulsed laser deposition (PLD). These films grow epitaxially on silicon with a (110) preferred orientation and have excellent piezoelectric

Growth and characterization of polycrystalline Ge1-xCx by reactive pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez, M.P.; Farias, M.H.; Castillon, F.F.; Diaz, Jesus A.; Avalos, M.; Ulloa, L.; Gallegos, J.A.; Yee-Madeiros, H.

2011-01-01

Polycrystalline thin films of Ge-C were grown on Si (1 1 1) substrates by means of reactive pulsed laser deposition with methane pressure of 100 mTorr. Effect substrate temperature, T s , on C incorporation to substitutional sites (x) in Ge 1-x C x was investigated systematically by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyzes. The substrate temperatures were ranging from 250 to 400 deg. C. The substitutional C composition x in the films by XRD were estimated using the Vegard's linear law. The maximum value of x calculated by XRD was 0.032 for T s of 350 deg. C. The position of the C 1s peak at 283.4 eV in the XPS spectrum confirmed the germanium-carbon alloys. XRD measurements indicated that x increased with T s from 250 deg. C to 350 deg. C. At T s = 400 deg. C, the estimation of x was lowered. However, the C content calculated by XPS analyzes increased with T s being more these values than substitutional C composition x. XPS and XRD analyzes demonstrate that the remaining C atoms are incorporated to interstitial sites. The use of the T s plays important roles in the incorporation of substitutional C and in restraining C-cluster formation in the reactive pulsed laser deposition growth of Ge-C/Si.

Elimination of impurity phase formation in FePt magnetic thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Wang, Ying; Medwal, Rohit; Sehdev, Neeru; Yadian, Boluo; Tan, T.L.; Lee, P.; Talebitaher, A.; Ilyas, Usman; Ramanujan, R.V.; Huang, Yizhong; Rawat, R.S.

2014-01-01

The formation of impurity phases in FePt thin films severely degrades its magnetic properties. The X-ray diffraction patterns of FePt thin films, synthesized using pulsed laser deposition (PLD), showed peaks corresponding to impurity phases, resulting in softer magnetic properties. A systematic investigation was carried to determine the factors that might have led to impurity phase formation. The factors include (i) PLD target composition, (ii) substrate material, (iii) annealing parameters such as temperature, duration and ambience and (iv) PLD deposition parameters such as chamber ambience, laser energy fluence and target–substrate distance. Depositions on the different substrates revealed impurity phase formation only on Si substrates. It was found that the target composition, PLD chamber ambience, and annealing ambience were not the factors that caused the impurity phase formation. The annealing temperature and duration influenced the impurity phases, but are not the cause of their formation. A decrease in the laser energy fluence and increase of the target–substrate distance resulted in elimination of the impurity phases and enhancement in the magnetic and structural properties of FePt thin films. The energy of the ablated plasma species, controlled by the laser energy fluence and the target–substrate distance, is found to be the main factor responsible for the formation of the impurity phases.

Optimal properties for coated titanium implants with the hydroxyapatite layer formed by the pulsed laser deposition technique

Science.gov (United States)

Himmlova, Lucia; Dostalova, Tatjana; Jelinek, Miroslav; Bartova, Jirina; Pesakova, V.; Adam, M.

1999-02-01

Pulsed laser deposition technique allow to 'tailor' bioceramic coat for metal implants by the change of deposition conditions. Each attribute is influenced by the several deposition parameters and each parameter change several various properties. Problem caused that many parameters has an opposite function and improvement of one property is followed by deterioration of other attribute. This study monitor influence of each single deposition parameter and evaluate its importance form the point of view of coat properties. For deposition KrF excimer laser in stainless-steel deposition chamber was used. Deposition conditions (ambient composition and pressures, metallic substrate temperature, energy density and target-substrate distance) were changed according to the film properties. A non-coated titanium implant was used as a control. Films with promising mechanical quality underwent an in vitro biological tests -- measurement of proliferation activity, observing cell interactions with macrophages, fibroblasts, testing toxicity of percolates, observing a solubility of hydroxyapatite (HA) coat. Deposition conditions corresponding with the optimal mechanical and biochemical properties are: metal temperature 490 degrees Celsius, ambient-mixture of argon and water vapor, energy density 3 Jcm-2, target-substrate distance 7.5 cm.

Highly textured fresnoite thin films synthesized in situ by pulsed laser deposition with CO2 laser direct heating

International Nuclear Information System (INIS)

Lorenz, Michael; Stölzel, Marko; Brachwitz, Kerstin; Hochmuth, Holger; Grundmann, Marius; De Pablos-Martin, Araceli; Patzig, Christian; Höche, Thomas

2014-01-01

Fresnoite Ba 2 TiSi 2 O 8 (BTS) thin films were grown and crystallized in situ using pulsed laser deposition (PLD) with CO 2 laser direct heating of the a-plane sapphire (1 1 0) substrates up to 1250 °C. Starting with 775 °C growth temperature, (0 0 1)- and (1 1 0)-textured BTS and BaTiO 3 phases, respectively, could be assigned in the films, and the typical fern-like BTS crystallization patterns appear. For higher process temperatures of 1100 to 1250 °C, atomically smooth, terraced surface of the films was found, accompanied by crystalline high-temperature phases of Ba–Ti–Si oxides. HAADF micrographs taken in both scanning transmission electron microscopy and energy-dispersive x-ray spectrometry mode show details of morphology and elemental distribution inside the films and at the interface. To balance the inherent Si deficiency of the BTS films, growth from glassy BTS × 2 SiO 2 and BTS × 2.5 SiO 2 targets was considered as well. The latter targets are ideal for PLD since the employed glasses possess 100% of the theoretical density and are homogeneous at the atomic scale. (paper)

Structure and properties of (Sr, Ca)CuO2-BaCuO2 superlattices grown by pulsed laser interval deposition

NARCIS (Netherlands)

Koster, Gertjan; Verbist, Karen; Rijnders, Augustinus J.H.M.; Rogalla, Horst; van Tendeloo, Gustaav; Blank, David H.A.

2001-01-01

We report on the preparation of CuBa2(SrxCa1¿x)nCun¿1Oy compounds by fabrication of (Ba,Sr,Ca)CuO2 superlattices with pulsed laser deposition (PLD). A technique called interval deposition is used to suppress multi-level or island growth resulting in high-quality superlattice structures. Both, the

Heat treatment of cathodic arc deposited amorphous hard carbon films

Energy Technology Data Exchange (ETDEWEB)

Anders, S.; Ager, J.W. III; Brown, I.G. [and others

1997-02-01

Amorphous hard carbon films of varying sp{sup 2}/sp{sup 3} fractions have been deposited on Si using filtered cathodic are deposition with pulsed biasing. The films were heat treated in air up to 550 C. Raman investigation and nanoindentation were performed to study the modification of the films caused by the heat treatment. It was found that films containing a high sp{sup 3} fraction sustain their hardness for temperatures at least up to 400 C, their structure for temperatures up to 500 C, and show a low thickness loss during heat treatment. Films containing at low sp{sup 3} fraction graphitize during the heat treatment, show changes in structure and hardness, and a considerable thickness loss.

Reactive pulsed laser deposition of Cu2ZnSnS4 thin films in H2S

International Nuclear Information System (INIS)

Surgina, G.D.; Zenkevich, A.V.; Sipaylo, I.P.; Nevolin, V.N.; Drube, W.; Teterin, P.E.; Minnekaev, M.N.

2013-01-01

Cu 2 ZnSnS 4 (CZTS) thin films have been grown by reactive pulsed laser deposition in H 2 S atmosphere, combining the alternate ablation from the metallic (Cu) and alloyed (Zn x Sn) targets at room temperature. The morphological, structural and optical properties of as grown CZTS thin films with varying compositions as well as upon annealing in N 2 atmosphere are investigated by Rutherford backscattering spectrometry, X-ray diffraction, Raman spectroscopy and optical spectrophotometry. The chemical bonding in the “bulk” of the CZTS films is elucidated via hard X-ray photoemission spectroscopy measurements. The formation of the good quality stoichiometric polycrystalline CZTS films is demonstrated upon optimization of the growth parameters. - Highlights: ► The new method of Cu 2 ZnSnS 4 (CZTS) thin films growth in H 2 S was realized. ► CZTS films were grown by pulsed laser deposition from Cu and alloyed Zn–Sn targets. ► The effect of the processing parameters on the CZTS properties was investigated. ► The chemical bonding in the “bulk” of CZTS films was studied

Laser Deposition of Polymer Nanocomposite Thin Films and Hard Materials and Their Optical Characterization

Science.gov (United States)

2013-12-05

visible light on instruments such as microscope tips and micro- surgical tools. Hard carbon known as diamond-like carbon films produced by pulsed laser ...visible (610 nm) LED source and a supplemental infra-red 980-nm laser diode (for the studies of the upconversion fluorescence). The basic package...5/2013 Final Performance Report 15 Sep 2012- 14 Sep 2013 LASER DEPOSITION OF POLYMER NANOCOMPOSITE THIN FILMS AND HARD MATERIALS AND THEIR OPTICAL

Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

International Nuclear Information System (INIS)

Baek, Jonghoon; Ma, James; Becker, Michael F.; Keto, John W.; Kovar, Desiderio

2007-01-01

Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 x 10 -2 Pa (4.5 x 10 -4 Torr) of 99.9% purity

Residual stresses in laser direct metal deposited Waspaloy

Energy Technology Data Exchange (ETDEWEB)

Moat, R.J., E-mail: richard.moat@manchester.ac.uk [School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom); Pinkerton, A.J.; Li, L. [Laser Processing Research Centre, School of Mechanical, Aerospace and Civil Engineering, University of Manchester, M60 1QD (United Kingdom); Withers, P.J.; Preuss, M. [School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom)

2011-03-15

Research highlights: {yields} Neutron diffraction and the contour method show good agreement. {yields} Tensile stresses found parallel to the surfaces. {yields} Compressive stresses within the bulk of the structures. {yields} Residual stress weakly dependent on the laser pulse parameters. {yields} Maximum tensile residual stress unaffected across range of pulse parameters used. - Abstract: This paper reports a study into the effect of laser pulse length and duty cycle on the residual stress distributions in multi-track laser direct metal deposits of Waspaloy onto an Inconel 718 substrate. The residual stresses have been evaluated using neutron diffraction and the contour method, while electron microscopy and micro hardness indentation have been used to map the concomitant microstructural variation. In all cases, near the tops of the deposited walls, the longitudinal stresses are tensile towards the mid-length of the wall, while the stresses perpendicular to the substrate are negligible. By contrast near the base of the walls, the stresses along the direction of deposition are small, while the stresses perpendicular to the substrate are compressive at the centre and tensile towards the ends. Consistent with previous observations, the stresses parallel to free surfaces are tensile, balanced by compressive stresses in the interior (an inverse quench stress profile). These profiles have been found to be weakly dependent on the laser pulse parameters, most notably an increase in tensile stress gradient with increasing duty cycle, but the maximum residual stresses are largely unaffected. Furthermore, microstructural analysis has shown that the effect of laser pulse parameters on grain morphology in multi-track thick walls is less marked than previously reported for single-track wall structures.

Residual stresses in laser direct metal deposited Waspaloy

International Nuclear Information System (INIS)

Moat, R.J.; Pinkerton, A.J.; Li, L.; Withers, P.J.; Preuss, M.

2011-01-01

Research highlights: → Neutron diffraction and the contour method show good agreement. → Tensile stresses found parallel to the surfaces. → Compressive stresses within the bulk of the structures. → Residual stress weakly dependent on the laser pulse parameters. → Maximum tensile residual stress unaffected across range of pulse parameters used. - Abstract: This paper reports a study into the effect of laser pulse length and duty cycle on the residual stress distributions in multi-track laser direct metal deposits of Waspaloy onto an Inconel 718 substrate. The residual stresses have been evaluated using neutron diffraction and the contour method, while electron microscopy and micro hardness indentation have been used to map the concomitant microstructural variation. In all cases, near the tops of the deposited walls, the longitudinal stresses are tensile towards the mid-length of the wall, while the stresses perpendicular to the substrate are negligible. By contrast near the base of the walls, the stresses along the direction of deposition are small, while the stresses perpendicular to the substrate are compressive at the centre and tensile towards the ends. Consistent with previous observations, the stresses parallel to free surfaces are tensile, balanced by compressive stresses in the interior (an inverse quench stress profile). These profiles have been found to be weakly dependent on the laser pulse parameters, most notably an increase in tensile stress gradient with increasing duty cycle, but the maximum residual stresses are largely unaffected. Furthermore, microstructural analysis has shown that the effect of laser pulse parameters on grain morphology in multi-track thick walls is less marked than previously reported for single-track wall structures.

Layered double hydroxides/polymer thin films grown by matrix assisted pulsed laser evaporation

Energy Technology Data Exchange (ETDEWEB)

Birjega, R.; Matei, A.; Mitu, B.; Ionita, M.D.; Filipescu, M.; Stokker-Cheregi, F.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest–Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Corobea, M.C. [National R. and S. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021, Bucharest (Romania)

2013-09-30

Due to their highly tunable properties, layered double hydroxides (LDHs) are an emerging class of the favorably layered crystals used for the preparation of multifunctional polymer/layered crystal nanocomposites. In contrast to cationic clay materials with negatively charge layers, LDHs are the only host lattices with positively charged layers (brucite-like), with interlayer exchangeable anions and intercalated water. In this work, the deposition of thin films of Mg and Al based LDH/polymers nanocomposites by laser techniques is reported. Matrix assisted pulsed laser evaporation was the method used for thin films deposition. The Mg–Al LDHs capability to act as a host for polymers and to produce hybrid LDH/polymer films has been investigated. Polyethylene glycol with different molecular mass compositions and ethylene glycol were used as polymers. The structure and surface morphology of the deposited LDH/polymers films were examined by X-ray diffraction, Fourier transform infra-red spectroscopy, atomic force microscopy and scanning electron microscopy. - Highlights: • Hybrid composites deposited by matrix assisted pulsed laser evaporation (MAPLE). • Mg–Al layered double hydroxides (LDH) and polyethylene glycol (PEG) are used. • Mixtures of PEG1450 and LDH were deposited by MAPLE. • Deposited thin films preserve the properties of the starting material. • The film wettability can be controlled by the amount of PEG.

Characteristics of tungsten oxide thin films prepared on the flexible substrates using pulsed laser deposition

International Nuclear Information System (INIS)

Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyuu, Yoshihito

2008-01-01

Tungsten trioxide (WO 3 ) thin films have been prepared on the flexible indium tin oxide (ITO) substrates by pulsed laser deposition (PLD) using WO 3 targets in oxygen gas. Color of the WO 3 film on the flexible ITO substrates depends on the oxygen gas mixture. The plasma plume produced by PLD using a Nd:YAG laser and WO 3 target is investigated by temporal and spatial-resolved optical emission spectroscopy. WO 3 films prepared on the flexible ITO substrates show electrochromic properties, even when the substrates are bent. The film color changes from blue to transparent within 10-20 s after the applied DC voltage is turned off

Quantitative TEM analysis of Al/Cu multilayer systems prepared by pulsed laser deposition

DEFF Research Database (Denmark)

Liu, Haihua; Pryds, Nini; Schou, Jørgen

2010-01-01

Thin films composed of alternating Al/Cu/Al layers were deposited on a (111) Si substrate using pulsed laser deposition (PLD). The thicknesses of the film and the individual layers, and the detailed internal structure within the layers were characterized by means of transmission electron microscopy...... for the formation of the first layer of nano-sized Al grains. The results demonstrate that the PLD technique is a powerful tool to produce nano-scale multilayered metal films with controllable thickness and grain sizes....... (TEM), high-resolution TEM (HRTEM), and energy-filtered TEM (EFTEM). Each Al or Cu layer consists of a single layer of nano-sized grains of different orientations. EFTEM results revealed a layer of oxide about 2 nm thick on the surface of the Si substrate, which is considered to be the reason...

Characteristics of LaB{sub 6} thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Craciun, Valentin; Socol, Gabriel; Craciun, Doina, E-mail: doina.craciun@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, Magurele 077125 (Romania); Cristea, Daniel [Materials Science Department, Transilvania University of Brasov, Brasov 500036 (Romania); Lambers, Eric [Major Analytical Instrumentation Center (MAIC), University of Florida, Gainesville, Florida 32611 (United States); Trusca, Roxana [Faculty of Applied Chemistry and Material Science, Department of Science and Engineering of Oxide Materials and Nanomaterials, University Politehnica of Bucharest, Bucharest 011061, 060042 (Romania); Fairchild, Steven [Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXA) Wright-Patterson AFB, Ohio 45433-7707 (United States); Back, Tyson; Gruen, Greggory [Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXA) Wright-Patterson AFB, Ohio 45433-7707 and Energy and Environmental Engineering Division, University of Dayton Research Institute, Dayton, Ohio 45469-0170 (United States)

2016-09-15

LaB{sub 6} thin films were deposited at a temperature of 500 °C under vacuum or Ar atmosphere by the pulsed laser deposition technique on (100) Si substrates using a KrF laser. Grazing incidence x-ray diffraction investigations found that films were nanocrystalline, with grain size dimensions from 86 to 102 nm and exhibited microstrain values around 1.1%. Simulations of the x-ray reflectivity curves acquired from the deposited films showed that films had a density around 4.55 g/cm{sup 3}, and were very smooth, with a surface roughness root-mean-square of 1.5 nm, which was also confirmed by scanning electron and atomic force microscopy measurements. All films were covered by a ∼2 nm thick contamination layer that formed when samples were exposed to the ambient. Auger electron spectroscopy investigations found very low oxygen impurity levels below 1.5 at. % once the contamination surface layer was removed by Ar ion sputtering. Four point probe measurements showed that films were conductive, with a resistivity value around 200 μΩ cm for those deposited under Ar atmosphere and slightly higher for those deposited under vacuum. Nanoindentation and scratch investigations showed that films were rather hard, H ∼ 16 GPa, E ∼ 165 GPa, and adherent to the substrate. Thermionic emission measurements indicated a work function value of 2.66 eV, very similar to other reported values for LaB{sub 6}.

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Science.gov (United States)

Leedy, Kevin D.; Chabak, Kelson D.; Vasilyev, Vladimir; Look, David C.; Boeckl, John J.; Brown, Jeff L.; Tetlak, Stephen E.; Green, Andrew J.; Moser, Neil A.; Crespo, Antonio; Thomson, Darren B.; Fitch, Robert C.; McCandless, Jonathan P.; Jessen, Gregg H.

2017-07-01

Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy and x-ray diffraction. Corresponding films deposited on Al2O3 were mostly single phase, polycrystalline β-Ga2O3 with a preferred (20 1 ¯ ) orientation. An average conductivity of 732 S cm-1 with a mobility of 26.5 cm2 V-1 s-1 and a carrier concentration of 1.74 × 1020 cm-3 was achieved for films deposited at 550 °C on β-Ga2O3 substrates as determined by Hall-Effect measurements. Two orders of magnitude improvement in conductivity were measured using native substrates versus Al2O3. A high activation efficiency was obtained in the as-deposited condition. The high carrier concentration Ga2O3 thin films achieved by pulsed laser deposition enable application as a low resistance ohmic contact layer in β-Ga2O3 devices.