High pressure monoclinic phases of Sb{sub 2}Te{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Souza, S.M.; Poffo, C.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.br [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Polian, A.; Gauthier, M. [Physique des Milieux Denses, IMPMC, CNRS-UMR 7590, Universite Pierre et Marie Curie-Paris 6, 4 Place Jussieu, 75252 Paris Cedex 05 (France)

2012-09-15

The effect of pressure on nanostructured rhombohedral {alpha}-Sb{sub 2}Te{sub 3} (phase I) was investigated using X-ray diffraction (XRD) and Raman spectroscopy (RS) up to 19.2 and 25.5 GPa, respectively. XRD patterns showed two new high pressure phases (named phases II and III). From a Rietveld refinement of XRD patterns of {alpha}-Sb{sub 2}Te{sub 3}, the unit cell volume as a function of pressure was obtained and the values were fitted to a Birch-Murnaghan equation of state (BM-EOS). The best fit was obtained for bulk modulus B{sub 0}=36.1{+-}0.9 GPa and its derivative B{sub 0}{sup Prime }=6.2{+-}0.4 (not fixed). Using the refined structural data for {alpha}-Sb{sub 2}Te{sub 3}, for pressures up to 9.8 GPa, changes in the angle of succession [Te-Sb-Te-Sb-Te], in the interaromic distances of Sb and Te atoms belonging to this angle of succession and in the interatomic distances of atoms located on the c axis were examined. This analysis revealed an electronic topological transition (ETT) along the a and c axes at close to 3.7 GPa. From the RS spectra, the full widths at half maximum (FWHM) of the Raman active modes of {alpha}-Sb{sub 2}Te{sub 3} were plotted as functions of pressure and showed an ETT along the a and c axes at close to 3.2 GPa. The XRD patterns of phases II and III were well reproduced assuming {beta}-Bi{sub 2}Te{sub 3} and {gamma}-Bi{sub 2}Te{sub 3} structures similar to those reported in the literature for {alpha}-Bi{sub 2}Te{sub 3}.

MoSbTe for high-speed and high-thermal-stability phase-change memory applications

Science.gov (United States)

Liu, Wanliang; Wu, Liangcai; Li, Tao; Song, Zhitang; Shi, Jianjun; Zhang, Jing; Feng, Songlin

2018-04-01

Mo-doped Sb1.8Te materials and electrical devices were investigated for high-thermal-stability and high-speed phase-change memory applications. The crystallization temperature (t c = 185 °C) and 10-year data retention (t 10-year = 112 °C) were greatly enhanced compared with those of Ge2Sb2Te5 (t c = 150 °C, t 10-year = 85 °C) and pure Sb1.8Te (t c = 166 °C, t 10-year = 74 °C). X-ray diffraction and transmission electron microscopy results show that the Mo dopant suppresses crystallization, reducing the crystalline grain size. Mo2.0(Sb1.8Te)98.0-based devices were fabricated to evaluate the reversible phase transition properties. SET/RESET with a large operation window can be realized using a 10 ns pulse, which is considerably better than that required for Ge2Sb2Te5 (∼50 ns). Furthermore, ∼1 × 106 switching cycles were achieved.

Effect of Se substitution on the phase change properties of Ge2Sb2Te5

Science.gov (United States)

Shekhawat, Roopali; Rangappa, Ramanna; Gopal, E. S. R.; Ramesh, K.

2018-05-01

Ge2Sb2Te5 popularly known as GST is being explored for non-volatile phase change random access memory(PCRAM) applications. Under high electric field, thin films of amorphous GST undergo a phase change from amorphous to crystalline with a high contrast in electrical resistivity (about 103). The phase change is between amorphous and metastable NaCl structure occurs at about 150°C and not to the stable hexagonal phase which occurs at a high temperature (> 250 °C). In GST, about 50 % of Te substituted by Se (Ge2Sb2Te2.5Se2.5) is found to increase the contrast in electrical resistivity by 7 orders of magnitude (about 4 orders of magnitude higher than GST). The phase transition in Se added GST also found to be between amorphous and the stable hexagonal structure. The threshold voltage at which the Ge2Sb2Te2.5Se2.5 switches to the high conducting state increases to 9V as compared to 2V in GST. Interestingly, the threshold current decrease to 1mA as compared to 1.8mA in GST indicating the Se substitution reduces the power needed for switching between the low and high conducting states. The reduction in power needed for phase change, high contrast in electrical resistivity with high thermal stability makes Ge2Sb2Te2.5Se2.5 as a better candidate for PCRAM.

Positron annihilation in Bi1.8Sb0.2Sr2Ca2Cu3Ox superconductor

International Nuclear Information System (INIS)

Chen Feng; Zheng Shennan; Zhang Suqun

1992-01-01

The positron lifetime and Doppler broadening line-shape parameter are measured as a function of the temperature from 78 K to 300 K for the Bi 1.8 Sb 0.2 Sr 2 Ca 2 Cu 3 O x superconductor. A decrease of both lifetime and S parameter is observed across T c . This can be interpreted by the theory of local charge transferring from the CuO layer to the BiO layer during superconducting transition. In the temperature region of normal state two anomalies are found around 165 K and 235 K. The possible origin of the observed anomalies is discussed

Unusual centrosymmetric structure of [M(18-crown-6)](+) (M = Rb, Cs and NH4) complexes stabilized in an environment of hexachloridoantimonate(V) anions.

Science.gov (United States)

Ponomarova, Vira V; Rusanova, Julia A; Rusanov, Eduard B; Domasevitch, Konstantin V

2015-10-01

In (1,4,7,10,13,16-hexaoxacyclooctadecane)rubidium hexachloridoantimonate(V), [Rb(C12H24O6)][SbCl6], (1), and its isomorphous caesium {(1,4,7,10,13,16-hexaoxacyclooctadecane)caesium hexachloridoantimonate(V), [Cs(C12H24O6)][SbCl6]}, (2), and ammonium {ammonium hexachloridoantimonate(V)-1,4,7,10,13,16-hexaoxacyclooctadecane (1/1), (NH4)[SbCl6]·C12H24O6}, (3), analogues, the hexachloridoantimonate(V) anions and 18-crown-6 molecules reside across -3 axes passing through the Sb atoms and the centroids of the 18-crown-6 groups, both of which coincide with centres of inversion. The Rb(+) [in (1)], Cs(+) [in (2)] and NH4(+) [in (3)] cations are situated inside the cavity of the 18-crown-6 ring; they are situated on -3 axes and are equally disordered about centres of inversion, deviating from the centroid of the 18-crown-6 molecule by 0.4808 (13), 0.9344 (7) and 0.515 (8) Å, respectively. Interaction of the ammonium cation and the 18-crown-6 group is supported by three equivalent hydrogen bonds [N...O = 2.928 (3) Å and N-H...O = 162°]. The centrosymmetric structure of [Cs(18-crown-6)](+), with the large Cs(+) cation approaching the centre of the ligand cavity, is unprecedented and accompanied by unusually short Cs-O bonds [2.939 (2) and 3.091 (2) Å]. For all three compounds, the [M(18-crown-6)](+) cations and [SbCl6](-) anions afford linear stacks along the c axis, with the cationic complexes embedded between pairs of inversion-related anions.

Phase diagram of the Sb-Se-I system and thermodynamic properties of SbSeI

International Nuclear Information System (INIS)

Aliev, Z.S.; Musaeva, S.S.; Babanly, D.M.; Shevelkov, A.V.; Babanly, M.B.

2010-01-01

The Sb-Se-I system was investigated by using the DTA and XRD analyses and EMF measurements with an antimony electrode. The T-x diagram of the binary Sb-I system was accurately redefined. A number of polythermal sections and the projection of the liquidus surface were constructed. The fields of the primary crystallization, as well as the types and coordinates of non- and monovariant equilibria were determined. It is shown that the quasi-binary sections Sb 2 Se 3 -SbI 3 , Sb-SbSeI, SbI 3 -Se, and SbSeI-Se triangulate the Sb-Se-I system, leading to five independent subsystems. A broad area of immiscibility, that overlaps a certain part of the antimony primary crystallization field, was found. From the EMF measurements, the partial molar functions of antimony (ΔG-bar, ΔH-bar, ΔS-bar) as well as standard integral thermodynamic functions of SbSeI were calculated. The latter were found to have the following values: ΔG f,298 0 =-80.12±1.81kJ/mol; ΔH f,298 0 =-77.3±1.8kJ/mol; S 298 0 =155.2±9.5J/(molK).

Synchrotron x-ray study of a low roughness and high efficiency K2CsSb photocathode during film growth

International Nuclear Information System (INIS)

Xie, Junqi; Demarteau, Marcel; Wagner, Robert; Schubert, Susanne; Gaowei, Mengjia; Attenkofer, Klaus; Walsh, John; Smedley, John; Ben-Zvi, Ilan; Wong, Jared; Feng, Jun; Padmore, Howard; Ruiz-Oses, Miguel; Ding, Zihao; Liang, Xue; Muller, Erik

2017-01-01

Reduction of roughness to the nm level is critical of achieving the ultimate performance from photocathodes used in high gradient fields. The thrust of this paper is to explore the evolution of roughness during sequential growth, and to show that deposition of multilayer structures consisting of very thin reacted layers results in an nm level smooth photocathode. Synchrotron x-ray methods were applied to study the multi-step growth process of a high efficiency K 2 CsSb photocathode. A transition point of the Sb film grown on Si was observed at the film thickness of ∼40 Å with the substrate temperature at 100 °C and the growth rate at 0.1 Å s −1 . The final K 2 CsSb photocathode exhibits a thickness of around five times that of the total deposited Sb film regardless of how the Sb film was grown. The film surface roughening process occurs first at the step when K diffuses into the crystalline Sb. The photocathode obtained from the multi-step growth exhibits roughness in an order of magnitude lower than the normal sequential process. X-ray diffraction measurements show that the material goes through two structural changes of the crystalline phase during formation, from crystalline Sb to K 3 Sb and finally to K 2 CsSb. (paper)

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

International Nuclear Information System (INIS)

Jiao, Xinbing; Gan, Fuxi; Wei, Jingsong; Xiao, Mufei

2009-01-01

The dependence of thermal properties of Ag 8 In 14 Sb 55 Te 23 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/gK, 1.85 mm 2 /s, and 4.0 W/mK at 300 K to 0.025 J/gK, 1.475 mm 2 /s, and 0.25 W/mK at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/gK and 0.075 J/gK, the thermal diffusivity basically maintains at 0.525 mm 2 /s, and the thermal conductivity decreases from 1.02 W/mK at 320 K to 0.2 W/mK at 440 K. Whether in the crystalline or amorphous state, Ag 8 In 14 Sb 55 Te 23 are more thermally active than Ge 2 Sb 2 Te 5 , that is, the Ag 8 In 14 Sb 55 Te 23 composites bear stronger thermal conduction and diffusion than the Ge 2 Sb 2 Te 5 phase-change memory materials. (orig.)

Colloidal synthesis and photophysics of M{sub 3}Sb{sub 2}I{sub 9} (M=Cs and Rb) nanocrystals. Lead-free perovskites

Energy Technology Data Exchange (ETDEWEB)

Pal, Jaya; Manna, Suman; Nag, Angshuman [Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune (India); Mondal, Anirban; Adarsh, K.V. [Department of Physics, Indian Institute of Science Education and Research (IISER), Bhopal (India); Das, Shyamashis [Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore (India)

2017-11-06

Herein we report the colloidal synthesis of Cs{sub 3}Sb{sub 2}I{sub 9} and Rb{sub 3}Sb{sub 2}I{sub 9} perovskite nanocrystals, and explore their potential for optoelectronic applications. Different morphologies, such as nanoplatelets and nanorods of Cs{sub 3}Sb{sub 2}I{sub 9}, and spherical Rb{sub 3}Sb{sub 2}I{sub 9} nanocrystals were prepared. All these samples show band-edge emissions in the yellow-red region. Exciton many-body interactions studied by femtosecond transient absorption spectroscopy of Cs{sub 3}Sb{sub 2}I{sub 9} nanorods reveals characteristic second-derivative-type spectral features, suggesting red-shifted excitons by as much as 79 meV. A high absorption cross-section of ca. 10{sup -15} cm{sup 2} was estimated. The results suggest that colloidal Cs{sub 3}Sb{sub 2}I{sub 9} and Rb{sub 3}Sb{sub 2}I{sub 9} nanocrystals are potential candidates for optical and optoelectronic applications in the visible region, though a better control of defect chemistry is required for efficient applications. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Sb2S3:C/CdS p-n junction by laser irradiation

International Nuclear Information System (INIS)

Arato, A.; Cardenas, E.; Shaji, S.; O'Brien, J.J.; Liu, J.; Castillo, G. Alan; Das Roy, T.K.; Krishnan, B.

2009-01-01

In this paper, we report laser irradiated carbon doping of Sb 2 S 3 thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb 2 S 3 thin films of approximately 0.5 μm in thickness. Sb 2 S 3 thin films were prepared from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 deg. C for 5 h and the films obtained were highly resistive. These C/Sb 2 S 3 thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb 2 S 3 :C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb 2 S 3 :C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl 2 , sodium citrate, NH 4 OH and thiourea at 70 deg. C . On the CdS film, Sb 2 S 3 /C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb 2 S 3 side facing the beam. The p-n junction formed by p-Sb 2 S 3 :C and n-type CdS showed V oc = 500 mV and J sc = 0.5 mA/cm 2 under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing

Study of the pseudo-ternary Ag2SAs2S3HgI2 vitreous system

Science.gov (United States)

Boidin, R.; Le Coq, D.; Cuisset, A.; Hindle, F.; Brubach, J.-B.; Michel, K.; Bychkov, E.

2013-03-01

Chalcogenide alloys in the Ag2SAs2S3HgI2 pseudo-ternary system were synthesized and their vitreous nature was verified by X-ray diffraction. The glass transition and crystallization temperatures (Tg and Tc), the density (d), and the total electrical conductivity (σ) were measured for all samples of three series, A, B, and C corresponding to (Ag2S)50-x/2(As2S3)50-x/2(HgI2)x, (Ag2S)y(As2S3)80-y(HgI2)20 and (Ag2S)z(As2S3)50(HgI2)50-z, respectively. The maximum of Tg was approximately 160 °C for glasses with low HgI2 content whereas the maximum of density (5.75 g cm-3) was obtained for the sample in the B-series with the highest Ag2S concentration (z=60 mol%). This composition also possesses the highest conductivity at 298 K (σ298 K≈10-3 S cm-1). Unexpectedly the conductivity of the A-series samples was observed to decrease as a function of the Ag2S content. The far-infrared transmission in the 100-600 cm-1 window range (3.3-18.2 THz, 100-16.6 μm) was also given for a few glass compositions highlighting the strong influence of the HgI2 content.

High temperature neutron powder diffraction study of the Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases

Energy Technology Data Exchange (ETDEWEB)

Lemoine, Pierric, E-mail: pierric.lemoine@univ-rennes1.fr [Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, 263 Avenue du Général Leclerc, CS 74205, 35042 Rennes Cedex (France); Bourgès, Cédric; Barbier, Tristan [Laboratoire CRISMAT, UMR-CNRS 6508, ENSICAEN, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex 04 (France); Nassif, Vivian [CNRS Institut NEEL, F-38000 Grenoble (France); Université de Grenoble Alpes, Institut NEEL, F-38000 Grenoble (France); Cordier, Stéphane [Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, 263 Avenue du Général Leclerc, CS 74205, 35042 Rennes Cedex (France); Guilmeau, Emmanuel [Laboratoire CRISMAT, UMR-CNRS 6508, ENSICAEN, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex 04 (France)

2017-03-15

Ternary copper-containing sulfides Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} have attracted considerable interest since few years due to their high-efficiency conversion as absorbers for solar energy and promising thermoelectric materials. We report therein on the decomposition study of Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases using high temperature in situ neutron powder diffraction. Our results obtained at a heating rate of 2.5 K/min indicate that: (i) Cu{sub 12}Sb{sub 4}S{sub 13} decomposes above ≈792 K into Cu{sub 3}SbS{sub 3}, and (ii) Cu{sub 4}Sn{sub 7}S{sub 16} decomposes above ≈891 K into Sn{sub 2}S{sub 3} and a copper-rich sulfide phase of sphalerite ZnS-type structure with an assumed Cu{sub 3}SnS{sub 4} stoichiometry. Both phase decompositions are associated to a sulfur volatilization. While the results on Cu{sub 12}Sb{sub 4}S{sub 13} are in fair agreement with recent published data, the decomposition behavior of Cu{sub 4}Sn{sub 7}S{sub 16} differs from other studies in terms of decomposition temperature, thermal stability and products of reaction. Finally, the crystal structure refinements from neutron powder diffraction data are reported and discussed for the Cu{sub 4}Sn{sub 7}S{sub 16} and tetrahedrite Cu{sub 12}Sb{sub 4}S{sub 13} phases at 300 K, and for the high temperature form of skinnerite Cu{sub 3}SbS{sub 3} at 843 K. - Graphical abstract: In situ neutron powder diffraction data (heating rate of 2.5 K/min) indicates that (i) the ternary Cu{sub 12}Sb{sub 4}S{sub 13} phase is stable up to 792 K and decomposes at higher temperature into Cu{sub 3}SbS{sub 3} and Cu{sub 1.5}Sb{sub 0.5}S{sub 2}, and (ii) the Cu{sub 4}Sn{sub 7}S{sub 16} phase is stable up to 891 K and decomposes at higher temperature into Sn{sub 2}S{sub 3} and a cubic phase of sphalerite ZnS-type structure. Sulfur volatilization likely occurs in order to balance the overall stoichiometry.

Ga-Ga bonding and tunnel framework in the new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Park, S -M; Kim, S -J; Kanatzidis, M G

2003-11-01

A new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5} was obtained from the reaction of Ba and Sb in excess Ga flux at 1000 deg. C, and its structure was determined with single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a=13.248(3) A, b=4.5085(9) A, c=24.374(5) A and Z=4. Ba{sub 3}Ga{sub 4}Sb{sub 5} has a three-dimensional [Ga{sub 4}Sb{sub 5}]{sup 6-} framework featuring large tunnels running along the b-axis and accommodating the Ba ions. The structure also has small tube-like tunnels of pentagonal and rhombic cross-sections. The structure contains ethane-like dimeric Sb{sub 3}Ga-GaSb{sub 3} units and GaSb{sub 4} tetrahedra that are connected to form 12- and 14-membered tunnels. Band structure calculations confirm that the material is a semiconductor and indicate that the structure is stabilized by strong Ga-Ga covalent bonding interactions.

Laser irradiation and thermal treatment inducing selective crystallization in Sb2O3-Sb2S3 glassy films

Science.gov (United States)

Avila, L. F.; Pradel, A.; Ribeiro, S. J. L.; Messaddeq, Y.; Nalin, M.

2015-02-01

The influence of both thermal treatment and laser irradiation on the structural and optical properties of films in the Sb2O3-Sb2S3 system was investigated. The films were prepared by RF-sputtering using glass compositions as raw materials. Irreversible photodarkening effect was observed after exposure the films to a 458 nm solid state laser. It is shown, for the first time, the use of holographic technique to measure "in situ", simultaneously and independently, the phase and amplitude modulations in glassy films. The films were also photo-crystallized and analysed "in situ" using a laser coupled to a micro-Raman equipment. Results showed that Sb2S3 crystalline phase was obtained after irradiation. The effect of thermal annealing on the structure of the films was carried out. Different from the result obtained by irradiation, thermal annealing induces the crystallization of the Sb2O3 phase. Photo and thermal induced effects on films were studied using UV-Vis and Raman spectroscopy, atomic force microscopy (AFM), thermal analysis (DSC), X-ray diffraction, scanning electron microscopy (MEV) and energy-dispersive X-ray spectroscopy (EDX).

Phase change behaviors of Zn-doped Ge2Sb2Te5 films

International Nuclear Information System (INIS)

Wang Guoxiang; Nie Qiuhua; Shen Xiang; Fu Jing; Xu Tiefeng; Dai Shixun; Wang, R. P.; Wu Liangcai

2012-01-01

Zn-doped Ge 2 Sb 2 Te 5 phase-change materials have been investigated for phase change memory applications. Zn 15.16 (Ge 2 Sb 2 Te 5 ) 84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge 2 Sb 2 Te 5 . The proper Zn atom added into Ge 2 Sb 2 Te 5 serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

The crystal structure of franckeite, Pb21.7Sn9.3Fe4.0Sb8.1S56.9

DEFF Research Database (Denmark)

Makovicky, Emil; Petricek, Vaclav; Dusek, Michal

2011-01-01

and forms a homologous pair with cylindrite, which has thinner Q slabs. The Q slabs in franckeite are four atomic layers thick. The two components have their own lattices and a common modulation. The Q slab of the refined franckeite structure, Pb21.74Sn9.34Fe3.95Sb8.08S56.87, is an MS layer (M = Pb2+, Sn2...... layer (M = Sn4+, Fe2+) with a = 3.665(8), b = 6.2575(16), c = 17.419(5) Å, a = 95.25(2)°, ß = 95.45(2)°, ¿ = 89.97(2)°; the modulation vector is q = –0.00087(8) a* + 0.13725(16) b* – 0.0314(4) c*. The a and b vectors of both subsystems are parallel; the c vectors diverge. (3+2)D superspace refinement...... was refined as Pb0.74(Sn,Sb)0.26, whereas that of cations, which are adjacent to the interspace with lone electron pairs, with a configuration analogous to that observed in orthorhombic SnS, corresponds to (Sn,Sb)0.73Pb0.27. Iron is dispersed over the octahedral Sn4+ sites in the H layer. Transversal...

Characterization of Cr-doped Sb{sub 2}Te{sub 3} films and their application to phase-change memory

Energy Technology Data Exchange (ETDEWEB)

Wang, Qing; Xia, Yangyang; Zheng, Yonghui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); University of the Chinese Academy of Sciences, Beijing, 100049 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Liu, Bo; Zhu, Min; Song, Sannian; Lv, Shilong; Cheng, Yan; Song, Zhitang; Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Huo, Ruru [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghaitech University, Shanghai, 200031 (China)

2015-08-15

Phase-change memory (PCM) is regarded as one of the most promising candidates for the next-generation nonvolatile memory. Its storage medium, phase-change material, has attracted continuous exploration. Along the traditional GeTe-Sb{sub 2}Te{sub 3} tie line, the binary compound Sb{sub 2}Te{sub 3} is a high-speed phase-change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb{sub 2}Te{sub 3}, called Cr-Sb{sub 2}Te{sub 3} (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb{sub 2}Te{sub 3} without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST{sub 1}0.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10-year data retention is 120.8 C, which indicates better thermal stability than GST and pure Sb{sub 2}Te{sub 3}. PCM cells based on CST{sub 1}0.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr-Sb{sub 2}Te{sub 3} with suitable composition is a promising novel phase-change material used for PCM with high speed and good thermal stability performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

3+ and [Sb13Se16Br2] 5+ - Double and quadruple spiro cubanes from ionic liquids

KAUST Repository

Ahmed, Ejaz

2014-01-08

The reaction of antimony and selenium in the bromine-rich Lewis acidic ionic liquid [BMIm]Br·4.7AlBr3 (BMIm: 1-butyl-3- methylimidazolium) in the presence of a small amount of NbCl5 at 160 °C yielded dark-red crystals of [Sb7Se8Br 2][AlX4]3. For X = Cl0.15(1)Br 0.85(1), the compound is isostructural to [Sb7S 8Br2][AlCl4]3 [P212 121, a = 12.5132(5) Å, b = 17.7394(6) Å, c = 18.3013(6) Å]. For a higher chlorine content, X = Cl 0.58(1)Br0.42(1), a slightly disordered variant with a bisected unit cell is found [P21212, a = 12.3757(3) Å, b = 17.4116(5) Å, c = 9.0420(2) Å]. The [Sb 7Se8Br2]3+ heteropolycation (C 2 symmetry) is a spiro double-cubane with an antimony atom on the shared corner. From this distorted octahedrally coordinated central atom, tricoordinate selenium and antimony atoms alternate in the bonding sequence. The terminal antimony atoms each bind to a bromine atom. Quantum chemical calculations confirm polar covalent Sb-Se bonding within the cubes and indicate three-center, four-electron bonds for the six-coordinate spiro atoms. The calculated charge distribution reflects the electron-donor role of the antimony atoms. The use of a chlorine-rich ionic liquid resulted in the formation of triclinic [Sb13Se16Br2][AlX4] 5 with X = Cl0.80(1)Br0.20(1) [P$\\\\bar {1}$, a = 9.0842(5) Å, b = 19.607(1) Å, c = 21.511(1) Å, α = 64.116(6), β = 79.768(7), γ = 88.499(7)]. The cationic cluster [Sb13Se16Br2]5+ is a bromine-terminated spiro quadruple-cubane. This 31 atom concatenation of four cubes is assumed to be the largest known discrete main group polycation. A similar reaction in a chloride-free system yielded [Sb7Se 8Br2][Sb13Se16Br2] [AlBr4]8. In its monoclinic structure [P2/c, a = 27.214(5) Å, b = 9.383(2) Å, c = 22.917(4) Å, β = 101.68(1)], the two types of polycations alternate in layers along the a axis. In the series [Sb4+3nSe4+4nBr2](2+n)+, these cations are the members with n = 1 and 3. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGa

Solvothermal synthesis of a new 3-D mixed-metal sulfide framework, (H{sub 1.33}tren)[In{sub 2.67}Sb{sub 1.33}S{sub 8}]·tren

Energy Technology Data Exchange (ETDEWEB)

Lampkin, John D., E-mail: j.lampkin@pgr.rdg.ac.uk; Powell, Anthony V., E-mail: a.v.powell@rdg.ac.uk; Chippindale, Ann M., E-mail: a.m.chippindale@rdg.ac.uk

2016-11-15

A new indium(III) antimony(V) sulfide, (H{sub 1.33}tren)[In{sub 2.67}Sb{sub 1.33}S{sub 8}]·tren, has been prepared solvothermally at 433 K. The compound crystallises in the tetragonal space group I-42d (lattice parameters, a=12.6248(5) and c=19.4387(18) Å at 150 K) and contains adamantane-like T2 supertetrahedral units comprised of corner-sharing InS{sub 4}{sup 5−} and SbS{sub 4}{sup 3−} tetrahedra. The adamantane-like units are then linked through sulfur vertices to generate an open, 3-D framework structure containing large pores in which neutral, protonated tren (tris(2-aminoethylene)amine) molecules reside. The presence of the organic components was confirmed by solid-state {sup 13}C NMR (10 kHz), combustion and thermogravimetric analysis. The band gap, obtained from UV–vis diffuse reflectance measurements, is 2.7(2) eV. Stirring with either water or alkali-metal salt solution leads to removal of the neutral tren molecules and an ~9% reduction in unit-cell volume on formation of (H{sub 1.33}tren)[In{sub 2.67}Sb{sub 1.33}S{sub 8}]·(H{sub 2}O){sub 4}. - Graphical abstract: Linking of In(III)-Sb(V)-S adamantane units to form a 3-D open framework. - Highlights: • Preparation and structural characterisation of a new mixed-metal thiometallate. • The first mixed In(III)/Sb(V) supertetrahedron. • Optical band gap of 2.7(2) eV. • Soaking in aqueous alkali-metal solutions leads to removal of ca. 50% of the organic content.

Characterization of Cs-Sb cathodes for high charge RF photoinjectors

CERN Document Server

AUTHOR|(CDS)2082505; Beghi, Marco

Future accelerators such as CLIC (Compact LInear Collider), require high brightness electron beams that could be produced with a photoinjector (laser-driven electron source). Cs2Te photocathodes in combination with ultra-violet (UV) laser beams are currently used in many photoinjector facilities, but requirements to the electron sources for future accelerators like CLIC are more demanding. The main challenge for the CLIC drive beam photoinjector is to achieve high bunch charges (8.4 nC), high bunch repetition rates (500 MHz) within long trains (140 s) and with suciently long cathode lifetimes. In particular the laser pulse energy in UV, for such long pulse trains, is currently limited due to a degradation of the beam quality during the 4th harmonic frequency conversion process. Using the 2nd harmonic (green laser beam), provided it is matched with a low photoemission threshold photocathode material, would overcome this limitation. Cesium antimonide (Cs3Sb), being a photoemissive material in the visible range,...

Sb{sub 2}S{sub 3}:C/CdS p-n junction by laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Arato, A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Cardenas, E. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); O' Brien, J.J.; Liu, J. [Center for Nanoscience, University of Missouri-St. Louis, One University Boulevard, St. Louis, Missouri-63121 (United States); Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One University Boulevard, St. Louis, Missouri-63121 (United States); Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)], E-mail: bkrishnan@fime.uanl.mx

2009-02-02

In this paper, we report laser irradiated carbon doping of Sb{sub 2}S{sub 3} thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb{sub 2}S{sub 3} thin films of approximately 0.5 {mu}m in thickness. Sb{sub 2}S{sub 3} thin films were prepared from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 deg. C for 5 h and the films obtained were highly resistive. These C/Sb{sub 2}S{sub 3} thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb{sub 2} S{sub 3}:C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb{sub 2}S{sub 3}:C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl{sub 2}, sodium citrate, NH{sub 4}OH and thiourea at 70 deg. C . On the CdS film, Sb{sub 2}S{sub 3}/C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb{sub 2}S{sub 3} side facing the beam. The p-n junction formed by p-Sb{sub 2}S{sub 3}:C and n-type CdS showed V{sub oc} = 500 mV and J{sub sc} = 0.5 mA/cm{sup 2} under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing.

Ba{sub 4}In{sub 8}Sb{sub 16}: Thermoelectric properties of a new layered Zintl phase with infinite zigzag Sb chains and pentagonal tubes

Energy Technology Data Exchange (ETDEWEB)

Kim, S J; Hu, S; Uher, C; Kanatzidis, M G

1999-11-01

A new Zintl phase Ba{sub 4}In{sub 8}Sb{sub 16} was obtained from a direct element combination reaction of the elements in a sealed graphite tube at 700 C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 10.166(3) {angstrom}, b = 4.5239(14) {angstrom}, c = 19.495(6) {angstrom}, and Z = 1. Ba{sub 4}In{sub 8}Sb{sub 16} has a two-dimensional structure with thick corrugated (In{sub 8}Sb{sub 16}){sup 8{minus}} layers separated by Ba{sup 2+} ions. In the layer, InSb{sub 4} tetrahedra are connected by sharing three corners and by bridging the fourth corner in such a manner that infinite pentagonal tubes are formed. The compound is a narrow band gap ({approximately} 0.10 eV) semiconductor and satisfies the classical Zintl rule. Band structure calculations confirm that the material is a semiconductor and indicate that it has optimized In-Sb bonding interactions. Polycrystalline ingots of Ba{sub 4}In{sub 8}Sb{sub 16} show room-temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 {micro}V/K. The thermal conductivity of Ba{sub 4}In{sub 8}Sb{sub 16} is about 1.7 W/m{sm{underscore}bullet}K in the temperature range 150--300 K.

Phase Transitions in CsSnCl3 and CsPbBr3 An NMR and NQR Study

Science.gov (United States)

Sharma, Surendra; Weiden, Norbert; Weiss, Alarich

1991-04-01

The phase transitions in CsSnCl3 and CsPbBr3 have been studied by X-ray powder diffraction, by 81Br-NQR and by 'H-, 119Sn-, and 113Cs-NMR. At room temperature in air CsSnCl3 forms a hydrate which can be dehydrated to the monoclinic phase II of CsSnCl3. The high temperature phase I has the Perovskite structure, as the X-ray and NMR experiments show. The three phases of CsPbBr3, known from literature, have been corroborated. The results are discussed in the framework of the group ABX3, A = alkalimetal ion, B = IV main group ion, and X = Halogen ion

Secretin stimulates HCO3(-) and acetate efflux but not Na+/HCO3(-) uptake in rat pancreatic ducts

DEFF Research Database (Denmark)

Novak, I; Christoffersen, B C

2001-01-01

to be important in HCO3(-) -transporting epithelia. pHi was measured with BCECF in freshly isolated intralobular ducts. A reduction in extracellular Na+ concentration or application of HOE 694 (1 microM) decreased pHi by 0.1 to 0.6 pH units, demonstrating Na+/H+ exchanger activity. A reduction in extracellular Cl......- concentration or addition of H2DIDS (10 microM) increased pHi by 0.1 to 0.5 pH units, demonstrating Cl-/ HCO(3)- (OH ) exchanger activity. In experimental acidosis, extracellular HCO3(-)/CO2 buffer did not increase the rate of pHi recovery, indicating that provision of HCO3(-) by the Na+/HCO3(-) cotransporter...... was not apparent. Most importantly, Na+/HCO3(-) cotransport was not stimulated by secretin (1 nM). In contrast, in experimental alkalosis the pHi recovery was increased in HCO3(-)/CO2 buffer, possibly due to Na+/HCO3(-) cotransport in the efflux mode. Secretin (1 nM) and carbachol (1 microM) stimulated HCO3...

Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

OpenAIRE

Hussain, Arshad; Ahmed, Rashid; Ali, N.; Shaari, A.; Luo, Jing-Ting; Fu, Yong Qing

2017-01-01

Copper antimony sulphide (Cu3SbS3) with a p-type conductivity and optical band gaps in the range of 1.38 to 1.84 eV is considered to be a promising solar harvesting material with non-toxic and economical elements. In this study, we reported the fabrication of Cu3SbS3 thin films using successive thermal evaporation of Cu2S and Sb2S3 layers followed by annealing in an argon atmosphere at a temperature range of 300-375°C. The structural and optical properties of the as-deposited and annealed fil...

Sensitivity of Mesoporous CoSb2O6 Nanoparticles to Gaseous CO and C3H8 at Low Temperatures

Directory of Open Access Journals (Sweden)

Héctor Guillén-Bonilla

2015-01-01

Full Text Available Mesoporous CoSb2O6 nanoparticles, synthesized through a nonaqueous method (using cobalt nitrate, antimony trichloride, ethylenediamine, and ethanol as a solvent, were tested to establish their sensitivity to CO and C3H8 atmospheres at relatively low temperatures. The precursor material was dried at 200°C and calcined at 600°C. X-ray diffraction and scanning electron microscopy were employed to verify the existence of crystal phases (P42/mnm and the morphology of this trirutile-type CoSb2O6 oxide. Pyramidal and cubic shaped crystals (average size: 41.1 nm, embedded in the material’s surface, were identified. Mesopores (average size: 6.5 nm on the nanoparticles’ surface were observed by means of transmission electron microscopy. The best sensitivity of the CoSb2O6 in a CO atmosphere was at the relatively low temperatures of 250 and 350°C, whereas, in a C3H8 atmosphere, the sensitivity increased uniformly with temperature. These results encourage using the CoSb2O6 nanoparticles as gas sensors.

Area 3 Support Buildings (A3SB) H5-0992, H5-0996 PRL 218 Confirmatory Sampling Report

Science.gov (United States)

Mrdjenovich, Timothy

2015-01-01

The Area 3 Support Buildings site (A3SB) consists of two separate areas located on the north side of Beach Road in the northern portion of Kennedy Space Center, Florida (KSC), outside the secured perimeter of KSC. The A3SB areas are approximately 0.6 miles apart, and were developed as Shiffler's Grocery Store and Service Station (west site) and as a residence (east site) prior to acquisition by the National Aeronautics and Space Administration (NASA) in 1963. Both areas were used by the Bendix Company in support of NASA as chemical laboratories from 1963 through 1969. Both of the buildings were demolished by 1987. The west portion of the site was used by the US Fish & Wildlife Service (F&W) in support of the Merritt Island National Wildlife Refuge (MINWR) for parking at the entrance to the Hammock Trails from 1969 to the present. The east portion of the site was used for intermittent suspect materials staging in the early 1990s and is still used as an apiary location, but is otherwise no longer active. In support of the NASA HSWA permit requirements, this site was identified as Potential Release Location (PRL) 218 and a Solid Waste Management Unit (SWMU) Assessment (SA) was conducted in 2013. Confirmatory Sampling (CS) was recommended and approved by the KSC Remediation Team (KSCRT). Three locations of concern (LOCs) were identified and sampled at the site. The LOCs include two former chemical labs and a former suspect staging area. The CS was conducted in March of 2015 at three locations by means of Direct Push Technology (DPT) groundwater sampling and at one location for soil sampling. The samples were collected and analyzed in accordance with the approved CS Work Plan. There were no exceedances of criteria detected in any of the samples from the three LOCs. The results of this investigation indicate that past and/or present operations have not negatively impacted environmental media at the A3SB. Based upon no confirmed groundwater detections above GCTLs and no

First-principles study of electronic structure of CuSbS{sub 2} and CuSbSe{sub 2} photovoltaic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Maeda, T., E-mail: tmaeda@ad.ryukoku.ac.jp; Wada, T.

2015-05-01

We studied the features of CuSbS{sub 2} (CAS) and CuSbSe{sub 2} (CASe), two proposed photovoltaic compounds, and clarified their electronic structures by first-principles calculations and compared them to the chalcopyrite-type CuInSe{sub 2} results. For both CAS and CASe, the calculated enthalpies of formation of the chalcostibite phases were considerably lower than those of the chalcopyrite phases. Therefore, we considered that the chalcostibite phase is more stable for CAS and CASe. In their band structure calculated with the HSE06 hybrid functional, the valence band maxima of CAS and CASe were located at the Γ-point, and the conduction band minima were located at the R-point. Their second lowest conduction band was located at the Γ-point, whose energy level nearly equaled the R-point. For CAS (CASe), the partial density of the states shows the character of the Cu 3d and S 3p (Se 4p) orbitals at the top of the valence bands and the Sb 5p and S 3p (Se 4p) orbitals at the bottom of the conduction bands. The conduction bands of CAS and CASe have a p-orbital character (Sb 5p) that differs from the s-orbital character (In 5s) of CuInSe{sub 2}. It is for the reason that CAS and CASe do not have a chalcopyrite structure but a chalcostibite-type structure. The calculated absorption coefficient of CuSbS{sub 2} (10{sup 4}-10{sup 5} cm{sup −1}) is comparable to that of CuInSe{sub 2}. - Highlights: • We studied the features of CuSbS{sub 2} and CuSbSe{sub 2}, newly proposed photovoltaic compounds. • Chalcostibite phase is more stable in CuSbS{sub 2} and CuSbSe{sub 2}. • Band structures of CuSbS{sub 2} and CuSbS{sub 2} were calculated with HSE06 hybrid functional. • Absorption coefficient of chalcostibite-type CuSbS{sub 2} is comparable to that of CuInSe{sub 2}.

Phase Stability and Electronic Structure of Prospective Sb-Based Mixed Sulfide and Iodide 3D Perovskite (CH3NH3)SbSI2.

Science.gov (United States)

Li, Tianyang; Wang, Xiaoming; Yan, Yanfa; Mitzi, David B

2018-06-29

Lead-free antimony-based mixed sulfide and iodide perovskite phases have recently been reported to be synthesized experimentally and to exhibit reasonable photovoltaic performance. Through a combination of experimental validation and computational analysis, we show no evidence of the formation of the mixed sulfide and iodide perovskite phase, MASbSI 2 (MA = CH 3 NH 3 + ), and instead that the main products are a mixture of the binary and ternary compounds (Sb 2 S 3 and MA 3 Sb 2 I 9 ). Density functional theory calculations also indicate that such a mixed sulfide and iodide perovskite phase should be thermodynamically less stable compared with binary/ternary anion-segregated secondary phases and less likely to be synthesized under equilibrium conditions. Additionally, band structure calculations show that this mixed sulfide and iodide phase, if possible to synthesize (e.g., under nonequilibrium conditions), should have a suitable direct band gap for photovoltaic application.

Characterization of Ge Doping on Sb_2Te_3 for High-Speed Phase Change Memory Application

International Nuclear Information System (INIS)

Zhu Yue-Qin; Xie Hua-Qing; Zhang Zhong-Hua; Song San-Nian; Song Zhi-Tang; Shen Lan-Lan; Li Le; Wu Liang-Cai; Liu Bo

2015-01-01

The phase change material of Ge-doped Sb_2Te_3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb_2Te_3. Ge_0_._1_1Sb_2Te_3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge_2Sb_2Te_5. In addition, Ge_0_._1_1Sb_2Te_3 presents extremely rapid reverse switching speed (10 ns), and up to 10"5 programming cycles are obtained with stable set and reset resistances. (paper)

Phase transformation in Mg—Sb3Te thin films

International Nuclear Information System (INIS)

Li Jun-Jian; Chen Yi-Min; Nie Qiu-Hua; Lü Ye-Gang; Wang Guo-Xiang; Shen Xiang; Dai Shi-Xun; Xu Tie-Feng

2014-01-01

Mg-doped Sb 3 Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb 3 Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb 3 Te. Especially Mg 25.19 (Sb 3 Te)74.81 shows higher T c (∼ 190 °C) and larger E a (∼ 3.49 eV), which results in a better data retention maintaining for 10 yr at ∼ 112 °C. Moreover R a /R c value is also improved. These excellent properties make Mg—Sb—Te material a promising candidate for the phase-change memory (PCM). (special topic — international conference on nanoscience and technology, china 2013)

Solution-Processed hybrid Sb2 S3 planar heterojunction solar cell

Science.gov (United States)

Huang, Wenxiao; Borazan, Ismail; Carroll, David

Thin-film solar cells based on inorganic absorbers permit a high efficiency and stability. Among or those absorber candidates, recently Sb2S3 has attracted extensive attention because of its suitable band gap (1.5eV ~1.7 eV) , strong optical absorption, low-cost and earth-abundant constituents. Currently high-efficiency Sb2S3 solar cells have absorber layer deposited on nanostructured TiO2 electrodes in combination with organic hole transport material (HTM) on top. However it's challenging to fill the nanostructured TiO2 layer with Sb2S3 and subsequently by HTM, this leads to uncovered surface permits charge recombination. And the existing of Sb2S3/TiO2/HTM triple interface will enhance the recombination due to the surface trap state. Therefore, a planar junction cell would not only have simpler structure with less steps to fabricate but also ideally also have a higher open circuit voltage because of less interface carrier recombination. By far there is limited research focusing on planar Sb2S3 solar cell, so the feasibility is still unclear. Here, we developed a low-toxic solution method to fabricate Sb2S3 thin film solar cell, then we studied the morphology of the Sb2S3 layer and its impact to the device performance. The best device with a structure of FTO/TiO2/Sb2S3/P3HT/Ag has PCE over 5% which is similar or higher than yet the best nanostructure devices with the same HTM. Furthermore, based on solution engineering and surface modification, we improved the Sb2S3 film quality and achieved a record PCE. .

Coprecipitation of trace amounts of 137Cs and 85Sr with [Na(18-Crown-6]BPh4 from neutral and alkaline solutions

International Nuclear Information System (INIS)

Kulyukhin, S.A.; Konovalova, N.A.; Rumer, I.A.; Kamenskaya, A.N.; Mikheev, N.B.

2005-01-01

Coprecipitation of 137 Cs and 85 Sr with [Na(18-crown-6]BPh 4 solid phase from aqueous, aqueous-ethanolic, and alkaline solutions is studied. 137 C s and 85 Sr co-crystallize with [Na(18-crown-6]BPh 4 from aqueous and aqueous-ethanolic solutions. The cocrystallization coefficients D of 137 Cs and 85 Sr from aqueous solutions are 2.6 ± 0.5 and 3.3 ± 0.3, respectively. For aqueous-ethanolic solutions, the corresponding values are 4.4 ± 0.5 and 3.4 ± 0.4. In the alkaline solutions (0.1 and 1 M NaOH), 54-74% of 137 Cs and 37-51% of 85 Sr pass into the [Na(18-crown-6)]BPh 4 solid phase, depending on the crown ether concentration in the system [ru

Structural phase transitions in CsPbCl/sub 3/ and RbCdCl/sub 3/

Energy Technology Data Exchange (ETDEWEB)

Plesko, S; Kind, R; Roos, J [Swiss Federal Inst. of Technology, Zuerich. Lab. of Solid State Physics

1978-08-01

Structural phase transitions in CsPbCl/sub 3/ have been investigated by /sup 133/Cs and /sup 87/Rb nuclear magnetic resonance. The space groups of the room temperature phase in CsPbCl/sub 3/ and of two unknown phases in RbCdCl/sub 3/ could be clarified. Thus both perovskites show the same phase sequence from cubic Pm3m-O sub(h)sup(1) to tetragonal P4/mbm-D sub(4h)sup(5), orthorhombic Cmcm-D sub(2h)sup(17) and further orthorhombic Pnma-D sub(2h)sup(16).

Experimental investigation of As, Sb and Cs behavior during olivine serpentinization in hydrothermal alkaline systems

Science.gov (United States)

Lafay, Romain; Montes-Hernandez, German; Janots, Emilie; Munoz, Manuel; Auzende, Anne Line; Gehin, Antoine; Chiriac, Rodica; Proux, Olivier

2016-04-01

While Fluid-Mobile Elements (FMEs) such as B, Sb, Li, As or Cs are particularly concentrated in serpentinites, data on FME fluid-serpentine partitioning, distribution, and sequestration mechanisms are missing. In the present experimental study, the behavior of Sb, As and Cs during San Carlos olivine serpentinization was investigated using accurate mineralogical, geochemical, and spectroscopic characterization. Static-batch experiments were conducted at 200 °C, under saturated vapor pressure (≈1.6 MPa), for initial olivine grain sizes of coefficient increasing such as CsDp/fl = 1.5-1.6 elements are however substantially different. While the As partition coefficient remains constant throughout the serpentinization reaction, the Cs partition coefficient decreases abruptly in the first stages of the reaction to reach a constant value after the reaction is 40-60% complete. Both As and Cs partitioning appear to decrease with increasing initial olivine grain size, but there is no significant difference in the partitioning coefficient between the 30-56 and 56-150 μm grain size after complete serpentinization. X-ray absorption spectroscopy (XAS) measurements combined with X-ray chemical measurements reveal that the As(V) is mainly adsorbed onto the serpentinization products, especially brucite. In contrast, mineralogical characterization combined with XAS spectroscopy reveal redox sensitivity for Sb sequestration within serpentine products, depending on the progress of the reaction. When serpentinization is coefficient compared to that of the serpentine and brucite assemblage. Antimony reduction appears linked to water reduction accompanying the bulk iron oxidation, as half the initial Fe(II) is oxidized into Fe(III) and incorporated into the serpentine products once the reaction is over. The reduction of Sb implies a decrease of its solubility, but the type of secondary Sb-rich phases identified here might not be representative of natural systems where Sb

Unraveling the electrolyte properties of Na3SbS4 through computation and experiment

Science.gov (United States)

Rush, Larry E.; Hood, Zachary D.; Holzwarth, N. A. W.

2017-12-01

Solid-state sodium electrolytes are expected to improve next-generation batteries on the basis of favorable energy density and reduced cost. Na3SbS4 represents a new solid-state ion conductor with high ionic conductivities in the mS/cm range. Here, we explore the tetragonal phase of Na3SbS4 and its interface with metallic sodium anode using a combination of experiments and first-principles calculations. The computed Na-ion vacancy migration energies of 0.1 eV are smaller than the value inferred from experiment, suggesting that grain boundaries or other factors dominate the experimental systems. Analysis of symmetric cells of the electrolyte—Na/Na 3SbS4/Na —show that a conductive solid electrolyte interphase forms. Computer simulations infer that the interface is likely to be related to Na3SbS3 , involving the conversion of the tetrahedral SbS43 - ions of the bulk electrolyte into trigonal pyramidal SbS33 - ions at the interface.

First-principles study of the amorphous In3SbTe2 phase change compound

Science.gov (United States)

Los, Jan H.; Kühne, Thomas D.; Gabardi, Silvia; Bernasconi, Marco

2013-11-01

Ab initio molecular dynamics simulations based on density functional theory were performed to generate amorphous models of the phase change compound In3SbTe2 by quenching from the melt. In-Sb and In-Te are the most abundant bonds with only a minor fraction of Sb-Te bonds. The bonding geometry in the amorphous phase is, however, strongly dependent on the density in the range 6.448-5.75 g/cm3 that we investigated. While at high density the bonding geometry of In atoms is mostly octahedral-like as in the cubic crystalline phase of the ternary compound In3SbTe2, at low density we observed a sizable fraction of tetrahedral-like geometries similar to those present in the crystalline phase of the two binary compounds InTe and InSb that the ternary system can be thought to be made of. We show that the different ratio between octahedral-like and tetrahedral-like bonding geometries has fingerprints in the optical and vibrational spectra.

DWPF simulant CPC studies for SB8

Energy Technology Data Exchange (ETDEWEB)

Koopman, D. C.; Zamecnik, J. R.

2013-06-25

The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

DWPF simulant CPC studies for SB8

International Nuclear Information System (INIS)

Koopman, D. C.; Zamecnik, J. R.

2013-01-01

The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory

International Nuclear Information System (INIS)

Zhang Ting; Song Zhitang; Liu Bo; Feng Songlin

2008-01-01

Te-free environmental friendly Si x Sb 100−x phase-change materials are investigated. The binary material, which is compatible with the complementary metal-oxide-semiconductor manufacturing process, is outstanding in various properties. Si x Sb 100−x shows a much better data retention as compared with Ge 2 Sb 2 Te 5 . The density change for Si 10 Sb 90 and Si 16 Sb 84 is only about 3% and 3.8%, respectively. The failure times for Si 10 Sb 90 and Si 16 Sb 84 are about 10 3 and 10 6 times longer than that of Ge 2 Sb 2 Te 5 at 110 °C. The crystallization temperature of Si x Sb 100−x increases with silicon content within the material. Si x Sb 100−x materials are good candidates for the phase-change memory applications

Layered Halide Double Perovskites Cs3+nM(II)nSb2X9+3n (M = Sn, Ge) for Photovoltaic Applications.

Science.gov (United States)

Tang, Gang; Xiao, Zewen; Hosono, Hideo; Kamiya, Toshio; Fang, Daining; Hong, Jiawang

2018-01-04

Over the past few years, the development of lead-free and stable perovskite absorbers with excellent performance has attracted extensive attention. Much effort has been devoted to screening and synthesizing this type of solar cell absorbers. Here, we present a general design strategy for designing the layered halide double perovskites Cs 3+n M(II) n Sb 2 X 9+3n (M = Sn, Ge) with desired photovoltaic-relevant properties by inserting [MX 6 ] octahedral layers, based on the principles of increased electronic dimensionality. Compared to Cs 3 Sb 2 I 9 , more suitable band gaps, smaller carrier effective masses, larger dielectric constants, lower exciton binding energies, and higher optical absorption can be achieved by inserting variable [SnI 6 ] or [GeI 6 ] octahedral layers into the [Sb 2 I 9 ] bilayers. Moreover, our results show that adjusting the thickness of inserted octahedral layers is an effective approach to tune the band gaps and carrier effective masses in a large range. Our work provides useful guidance for designing the promising layered antimony halide double perovskite absorbers for photovoltaic applications.

Adducts of UF5 with SbF5 and structure of UF5 . 2SbF5

International Nuclear Information System (INIS)

Sawodny, W.; Rediess, K.

1980-01-01

Both α-UF 5 and β-UF 5 form only a 1:2 compound UF 5 . 2SbF 5 reacting directly with SbF 5 , from which UF 5 . SbF 5 can be obtained by thermal decomposition. UF 5 . 2SbF 5 crystallizes in the monoclinic space group P2 1 /c with the following lattice constants a = 8.110(4), b = 14.129(6), c = 10.032(6) A and β = 96.97(5) 0 ; Z = 4. An X-ray study shows centrosymmetric four-membered rings of alternating UF 8 and SbF 6 polyhedra connected by other SbF 6 entities. This structure is similar to that of UOF 5 . 2SbF 5 , but the distorted pentagonal-bipyramidal coordination of the U atom found there is increased to a dodecahedral coordination by an additional U-F-Sb bridge, though with a somewaht larger UF distance. (author)

Synthesis, characterization and photovoltaic properties of Mn-doped Sb2S3 thin film

Directory of Open Access Journals (Sweden)

Horoz Sabit

2018-03-01

Full Text Available Synthesis and characterization of Mn-doped Sb2S3 thin films (TFs prepared by chemical bath deposition (CBD at room temperature have been documented and their structural, optical, morphological, magnetic and photovoltaic properties have been examined for the first time. Their structural properties reveal that the Mn-doped Sb2S3 TF has an orthorhombic phase structure of Sb2S3, and that the grain size of the Mn-doped Sb2S3 TF (72.9 nm becomes larger than that of undoped Sb2S3 TF (69.3 nm. It has been observed that Mn content causes the Sb2S3 TF band gap to decrease. This situation clearly correlates with band tailing due to the impurities that are involved. The morphological properties have revealed that the shape of the Mn-doped Sb2S3 TF is more uniform than the shape of its undoped counterpart. The study on its magnetic properties has demonstrated that the Mn-doped Sb2S3 TF exhibits paramagnetic behavior. Its paramagnetic Curie-Weiss temperature was found to be -4.1 K. This result suggests that there is an anti-ferromagnetic interaction between Mn moments in the Mn-doped Sb2S3 TF. Incident photon to electron conversion efficiency (IPCE and J-V measurements were also carried out for the Mn-doped Sb2S3 TF for the first time. The results have indicated that the Mn-doped Sb2S3 TF can be utilized as a sensitizer to improve the performance of solar cells. Another important observation on the photovoltaic properties of Mn-doped Sb2S3 TF is that the spectral response range is wider than that of undoped Sb2S3 TF. Our study suggests that the introduction of dopant could serve as an effective means of improving the device performance of solar cells.

Density functional simulations of Sb-rich GeSbTe phase change alloys

International Nuclear Information System (INIS)

Gabardi, S; Bernasconi, M; Caravati, S; Parrinello, M

2012-01-01

We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge 1 Sb 1 Te 1 and Ge 2 Sb 4 Te 5 . Comparison with previous results on the most studied Ge 2 Sb 2 Te 5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm -1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge 2 Sb 2 Te 5 . All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

Density functional simulations of Sb-rich GeSbTe phase change alloys

Science.gov (United States)

Gabardi, S.; Caravati, S.; Bernasconi, M.; Parrinello, M.

2012-09-01

We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge1Sb1Te1 and Ge2Sb4Te5. Comparison with previous results on the most studied Ge2Sb2Te5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm-1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge2Sb2Te5. All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

No-carrier-added (NCA) synthesis of 6-[18F]fluoro-L-DOPA using 3,5,6,7,8,8a-hexahydro-7,7,8a-trimethyl-[6S-(6α, 8α, 8αβ)]-6,8-methano-2H-1,4-benzoxazin-2-one

International Nuclear Information System (INIS)

Horti, A.; Yale Univ., West Haven, CT; Redmond, D.E. Jr.; Soufer, R.

1995-01-01

3,5,6,7,8,8a-Hexahydro-7,7,8a-trimethyl-[6S-(6α,8α , 8αβ)]-6,8-methano-2H-1,4-benzoxazino-2-one (2) was investigated as chiral auxiliary for asymmetric NCA nucleophilic synthesis of 6-[ 18 F]Fluoro-L-DOPA. Direct condensation of 3,4-dimethoxy-2-[ 18 F]fluorobenzaldehyde (1a) or 6-[ 18 F]fluoro-piperonal (1b) in the presence of NaH with 2 gave the corresponding [ 18 F]-3-[(2-fluorophenyl)methylene]-3,5,6,7,8,8a-hexahydro-7,7,8 a-trimethyl-[6S-(3Z,3α,6α,8α,8αβ)]-6, 8-methano-2H-1,4-benzoxazin-2-one derivative 3a or 3b as a single stereoisomer. L-Selectride promoted hydrogenation of the olefinic double bond of these derivatives, in presence of tertbutyl alcohol, afforded the corresponding [ 18 F]-3-[(2-fluorophenyl) methyl]-3,5,6,7,8,8a-hexahydro-7,7,8a-trimethyl-[3S-(3α, 6α, 8α8αβ)]-6,8-methano-2H-1,4-benzoxazin-2-one derivatives (4a,b) without affecting the orientation of diasterofacial discrimination. Deprotection of the derivatives 4a,b yielded 6-[ 18 F]fluoro-L-DOPA (e.e. >90%, 3% radiochemical yield (EOB), total synthesis time 125 min, specific activity >2000 mCi/μmol). Direct deprotection/reduction of the compounds 3a,b provides the enantiomeric mixture of 6-[ 18 F]fluoro-D,L-DOPA (10-12% radiochemical yield) and, after chiral separation, 6-[ 18 F]fluoro-L-DOPA (e.e. 98%, 4-5% radiochemical yield). (author)

Synthesis and Characterization of Sb2S3 Nanorods via Complex Decomposition Approach

Directory of Open Access Journals (Sweden)

Abdolali Alemi

2011-01-01

Full Text Available Based on the complex decomposition approach, a simple hydrothermal method has been developed for the synthesizing of Sb2S3 nanorods with high yield in 24 h at 150∘C. The powder X-ray diffraction pattern shows the Sb2S3 crystals belong to the orthorhombic phase with calculated lattice parameters a=1.120 nm, b=1.128 nm, and c=0.383 nm. The quantification of energy dispersive X-ray spectrometric analysis peaks give an atomic ratio of 2 : 3 for Sb : S. TEM and SEM studies reveal that the appearance of the as-prepared Sb2S3 is rod-like which is composed of nanorods with the typical width of 30–160 nm and length of up to 6 μm. High-resolution transmission electron microscopic (HRTEM studies reveal that the Sb2S3 is oriented in the [10-1] growth direction. The band gap calculated from the absorption spectra is found to be 3.29 ev, indicating a considerable blue shift relative to the bulk. The formation mechanism of Sb2S3 nanostructures is proposed.

Determination of "1"3"5Cs by accelerator mass spectrometry

International Nuclear Information System (INIS)

MacDonald, C.M.; Charles, C.R.J.; Zhao, X.-L.; Kieser, W.E.; Cornett, R.J.; Litherland, A.E.

2015-01-01

The ratio of anthropogenic "1"3"5Cs and "1"3"7Cs isotopes is characteristic of a uranium fission source. This research evaluates the technique of isotope dilution (yield tracing) for the purpose of quantifying "1"3"5Cs by accelerator mass spectrometry with on-line isobar separation. Interferences from Ba, Zn_2, and isotopes of equal mass to charge ratios were successfully suppressed. However, some sample crosstalk from source contamination remains. The transmission and di-fluoride ionization efficiencies of Cs isotopes were found to be 8 × 10"−"3 and 1.7 × 10"−"7 respectively. This quantification of "1"3"5Cs using yield tracing by accelerator mass spectrometry shows promise for future environmental sample analysis once the issues of sample crosstalk and low efficiency can be resolved.

Phase diagram of the Sb-Se-I system and thermodynamic properties of SbSeI

Energy Technology Data Exchange (ETDEWEB)

Aliev, Z S; Musaeva, S S; Babanly, D M [Baku State University, General and Inorganic Chemistry Department (Azerbaijan); Shevelkov, A.V., E-mail: shev@inorg.chem.msu.r [Moscow Lomonosov State University, Chemistry Department (Russian Federation); Babanly, M.B., E-mail: Babanly_mb@rambler.r [Baku State University, General and Inorganic Chemistry Department (Azerbaijan)

2010-09-03

The Sb-Se-I system was investigated by using the DTA and XRD analyses and EMF measurements with an antimony electrode. The T-x diagram of the binary Sb-I system was accurately redefined. A number of polythermal sections and the projection of the liquidus surface were constructed. The fields of the primary crystallization, as well as the types and coordinates of non- and monovariant equilibria were determined. It is shown that the quasi-binary sections Sb{sub 2}Se{sub 3}-SbI{sub 3}, Sb-SbSeI, SbI{sub 3}-Se, and SbSeI-Se triangulate the Sb-Se-I system, leading to five independent subsystems. A broad area of immiscibility, that overlaps a certain part of the antimony primary crystallization field, was found. From the EMF measurements, the partial molar functions of antimony ({Delta}G-bar, {Delta}H-bar, {Delta}S-bar) as well as standard integral thermodynamic functions of SbSeI were calculated. The latter were found to have the following values: {Delta}G{sub f,298}{sup 0}=-80.12{+-}1.81kJ/mol; {Delta}H{sub f,298}{sup 0}=-77.3{+-}1.8kJ/mol; S{sub 298}{sup 0}=155.2{+-}9.5J/(molK).

Density functional simulations of Sb-rich GeSbTe phase change alloys

OpenAIRE

Gabardi, S; Caravati, S; Bernasconi, M; Parrinello, M

2012-01-01

We generated models of the amorphous phase of Sb rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge 1Sb 1Te 1 and Ge 2Sb 4Te 5. Comparison with previous results on the most studied Ge 2Sb 2Te 5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high fr...

Crystal and magnetic study of the disordered perovskites Ca(Mn0.5Sb0.5)O3 and Ca(Fe0.5Sb0.5)O3

International Nuclear Information System (INIS)

Retuerto, M.; Martinez-Lope, M.J.; Garcia-Hernandez, M.; Munoz, A.; Fernandez-Diaz, M.T.; Alonso, J.A.

2010-01-01

We have investigated the double perovskites Ca 2 MSbO 6 (M = Mn, Fe) that have been prepared by solid-state reaction (M = Fe) and wet chemistry procedures (M = Mn). The crystal and magnetic structures have been studied from X-ray (XRD) and neutron powder diffraction (NPD) data. Rietveld refinements show that the crystal structures are orthorhombic (space group Pbnm) with complete disorder of M and Sb cations, so the formula should be rewritten as Ca(M 0.5 Sb 0.5 )O 3 . Due to this disorder no evidences of Jahn-Teller distortion can be observed in the MnO 6 octahedra of Ca(Mn 0.5 Sb 0.5 )O 3 , in contrast with the ordered double perovskite Sr 2 MnSbO 6 . Ca(Fe 0.5 Sb 0.5 )O 3 behaves as an antiferromagnet with an ordered magnetic moment for Fe 3+ of 1.53(4)μ B and a propagation vector k = 0, as investigated by low-temperature NPD. The antiferromagnetic ordering is a result of the high degree of Fe/Sb anti-site disorder of the sample, which originates the spontaneous formation of Fe-rich islands, characterized by the presence of strong Fe-O-Fe antiferromagnetic couplings with enough long-range coherence to produce a magnetic contribution perceptible by NPD. By contrast, the magnetic structure of Ca(Mn 0.5 Sb 0.5 )O 3 cannot be observed by low-temperature NPD because the magnitude of the ordered magnetic moments is below the detection threshold for neutrons.

Probing the magnetic ground state of single crystalline Ce3TiSb5

Science.gov (United States)

Matin, M.; Kulkarni, R.; Thamizhavel, A.; Dhar, S. K.; Provino, A.; Manfrinetti, P.

2017-04-01

Motivated by the report of superconductivity in R3TiSb5 (R  =  La and Ce) and possibly Nd3TiSb5 at  ∼4 K, we grew single crystals of La3TiSb5 and Ce3TiSb5 by the high-temperature solution method using Sn as a flux. While in both compounds we observed a superconducting transition at 3.7 K for resistivity and low-field magnetization, our data conclusively show that it arose from residual Sn flux present in the single crystals. In particular, the heat capacity data do not present any of the anomalies expected from a bulk superconducting transition. The anisotropic magnetic properties of Ce3TiSb5, crystallizing in a hexagonal P63/mcm structure, were studied in detail. We find that the Ce ions in Ce3TiSb5 form a Kondo lattice and exhibited antiferromagnetic ordering at 5.5 K with a reduced moment and a moderately normalized Sommerfeld coefficient of 598 mJ/mol K2. The characteristic single-ion Kondo energy scale was found to be  ∼8 K. The magnetization data were subjected to a crystal electric field (CEF) analysis. The experimentally observed Schottky peak in the 4f-electron heat capacity of Ce3TiSb5 was reproduced fairly well by the energy levels derived from the CEF analysis.

Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

Science.gov (United States)

Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S. K.

2014-06-01

We have carried out comprehensive computational and experimental study on the face-centered cubic Ge2Sb2Te5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In2Te3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation α hν = β (hν - E_{{g }} )2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials.

Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

International Nuclear Information System (INIS)

Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S.K.

2014-01-01

We have carried out comprehensive computational and experimental study on the face-centered cubic Ge 2 Sb 2 Te 5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In 2 Te 3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation αhν = β(hν - E g ) 2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials. (orig.)

78 FR 56921 - South Bay Salt Pond Restoration Project, Phase 2 (Ponds R3, R4, R5, S5, A1, A2W, A8, A8S, A19...

Science.gov (United States)

2013-09-16

...-F2013227943] South Bay Salt Pond Restoration Project, Phase 2 (Ponds R3, R4, R5, S5, A1, A2W, A8, A8S, A19... South Bay Salt Pond Restoration Project and consists of restoring and enhancing over 2,000 acres of... Pollution Control Plant located at 700 Los Esteros Road, San Jose, California. The details of the public...

The Effect of SbI3 Doping on the Structure and Electrical Properties of n-Type Bi1.8Sb0.2Te2.85Se0.15 Alloy Prepared by the Free Growth Method

Science.gov (United States)

Wang, Xiaoyu; Yu, Yuan; Zhu, Bin; Gao, Na; Huang, Zhongyue; Xiang, Bo; Zu, Fangqiu

2018-02-01

Thermoelectric technology is regarded as one of the most promising direct power generation techniques via thermoelectric materials. However, the batch production and scale-up application are hindered because of the high-cost and poor performance. In this work, we adopt the free growth method to synthesize a series of the bulk materials of SbI3-doped Bi1.8Sb0.2Te2.85Se0.15 alloys. The structural and component investigations as well as the electrical properties characterization are carried out. The results show that SbI3 promotes the formation of Te-rich regions in the matrix. In addition, the synergistically optimized electrical conductivity and Seebeck coefficient are attained by controlling the SbI3 doping concentration. Thus, the sample with 0.30 wt.% SbI3 displays a highly increased power factor of ˜ 13.57 μW cm-1 K-2, which is nearly 21 times higher than that of the undoped one. Moreover, the free growth method is reproducible, convenient and economical. Therefore, it has great potential as a promising technology for the batch synthesis.

Solid state compatibility in the ZnO-rich region of ZnO-Bi2O3-Sb2O3 and ZnO-Bi2O3-Sb2O5 systems

Directory of Open Access Journals (Sweden)

Jardiel, T.

2010-04-01

Full Text Available The obtaining of ZnO-Bi2O3-Sb2O3 (ZBS based varistor thick films with high non-linear properties is constrained by the bismuth loss by vaporization that takes place during the sintering step of these ceramics, a process which is yet more critical in the thick film geometry due to its inherent high are/volume ratio. This volatilization can be controlled to a certain extent by modifying the proportions of the Bi and/or Sb precursors. Obviously this requires a clear knowledge of the different solid state compatibilities in the mentioned ZBS system. In this sense a detailed study of the thermal evolution of the ZnO-Bi2O3-Sb2O3 and ZnO-Bi2O3-Sb2O5 systems in the ZnO-rich region of interest for varistors, is presented in this contribution. A different behaviour is observed when using Sb2O3 or Sb2O5 as starting precursor, which should be attributed to the oxidation process experimented by Sb2O3 compound during the heating. On the other hand the use of high amounts of Bi in the starting formulation leads to the formation of a liquid phase at lower temperatures, which would allow the use of lower sintering temperatures.La obtención de varistors en lámina gruesa basados en ZnO-Bi2O3-Sb2O3 (ZBS y con propiedades altamente no-lineales está limitada por la perdida de bismuto por volatilización durante la sinterización de estos cerámicos, un proceso que es todavía más crítico en la geometría de lámina gruesa debido a su elevada relación área/volumen inherente. Dicha volatilización puede ser no obstante controlada hasta cierta extensión modificando las proporciones de los precursores de Bi y/o Sb. Obviamente ello conlleva un amplio conocimiento de las diferentes compatibilidades en estado sólido en el mencionado sistema ZBS. En este sentido, en la presente contribución se presenta un estudio detallado de la evolución térmica de los sistemas ZnO-Bi2O3-Sb2O3 y ZnO-Bi2O3-Sb2O5 en la región rica en ZnO de interés para varistores. Como

Superlattice-like SnSb{sub 4}/Ga{sub 3}Sb{sub 7} thin films for ultrafast switching phase-change memory application

Energy Technology Data Exchange (ETDEWEB)

Hu, Yifeng [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Jiangsu University of Technology, School of Mathematics and Physics, Changzhou (China); He, Zifang; Zhai, Jiwei [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Wu, Pengzhi; Lai, Tianshu [Sun Yat-Sen University, State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Guangzhou (China); Song, Sannian; Song, Zhitang [Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Shanghai (China)

2015-11-15

The carrier concentration of Sb-rich phase SnSb{sub 4}, Ga{sub 3}Sb{sub 7} and superlattice-like [SnSb{sub 4}(3.5 nm)/Ga{sub 3}Sb{sub 7}(4 nm)]{sub 7} (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson-Mehl-Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. (orig.)

Phase transitions in thin films of Sn-Sb-Se system

International Nuclear Information System (INIS)

Samsudi Sakrani; Abdalla Belal Adam; Yussof Wahab

1998-01-01

The preparation and formation of covalent ternary Sn-Sb-Se system were investigated. A solid state reaction technique was employed whereby the evaporated multilayers of Sn/Se/Sb/Sn reacted chemically at a fixed temperature of 240 o C and were allowed to a room temperature slow-cooling. X-ray diffraction analysis showed that phase changes occurred in the system, with indication of amorphization for the predicted Sn 9 .3Sb 8 .1Se 4 4.9 and Sn 1 3.2Sb 4 3.4Se 4 3.4 compositions. These enabled the preliminary topological phase transitions of Sn-Sb-Se system according to the Gibb's triangle in which the areas of crystalline-amorphous were located. (Author)

A series of noncentrosymmetric antimony sulfides Ln{sub 8}Sb{sub 2}S{sub 15} (Ln = La, Pr, Nd) - syntheses, crystal and electronic structures, and NLO properties

Energy Technology Data Exchange (ETDEWEB)

Zhao, Hua-Jun [Laboratory of Applied Research on the Characteristic Resources in the North of Guizhou Province, School of Chemistry and Chemical Engineering, Zunyi Normal College, Guizhou (China); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou (China); Zhou, Liu-Jiang [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou (China)

2015-02-15

A series of noncentrosymmetric sulfides Ln{sub 8}Sb{sub 2}S{sub 15} (Ln = La, Pr, Nd) were prepared from stoichiometric mixtures of the elements at 1223 K in an evacuated silica tube. The compounds Ln{sub 8}Sb{sub 2}S{sub 15} with Ln = La and Nd are isostructural to Pr{sub 8}Sb{sub 2}S{sub 15} and crystallize in the tetragonal noncentrosymmetric space group I4{sub 1}cd. Their structure contains discrete [SbS{sub 3}]{sup 3-} trigonal pyramids separated by Ln{sup 3+} cations and S{sup 2-} anions. La{sub 8}Sb{sub 2}S{sub 15} shows second harmonic generation with intensities 1.2 times that of the commercially used IR NLO (nonlinear optics) material AgGaS{sub 2} (at 2.05 μm laser). It exhibits excellent thermal stability up to 663 C. Studies with UV/Vis-NIR diffuse reflectance spectroscopy show that La{sub 8}Sb{sub 2}S{sub 15} has an optical gap of around 2.3 eV, and a DFT study indicates a direct band gap with an electronic transfer excitation of S 3p electrons to a La 5d orbital. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

No-carrier-added (NCA) synthesis of 6-[{sup 18}F]fluoro-L-DOPA using 3,5,6,7,8,8a-hexahydro-7,7,8a-trimethyl-[6S-(6{alpha}, 8{alpha}, 8{alpha}{beta})]-6,8-methano-2H-1,4-benzoxazin-2-one

Energy Technology Data Exchange (ETDEWEB)

Horti, A. [Yale Univ., New Haven, CT (United States). School of Medicine]|[Yale Univ., West Haven, CT (United States). PET Center; Redmond, D.E. Jr. [Yale Univ., New Haven, CT (United States). School of Medicine; Soufer, R. [Yale Univ., West Haven, CT (United States). PET Center

1995-12-31

3,5,6,7,8,8a-Hexahydro-7,7,8a-trimethyl-[6S-(6{alpha},8{alpha} , 8{alpha}{beta})]-6,8-methano-2H-1,4-benzoxazino-2-one (2) was investigated as chiral auxiliary for asymmetric NCA nucleophilic synthesis of 6-[{sup 18}F]Fluoro-L-DOPA. Direct condensation of 3,4-dimethoxy-2-[{sup 18}F]fluorobenzaldehyde (1a) or 6-[{sup 18}F]fluoro-piperonal (1b) in the presence of NaH with 2 gave the corresponding [{sup 18}F]-3-[(2-fluorophenyl)methylene]-3,5,6,7,8,8a-hexahydro-7,7,8 a-trimethyl-[6S-(3Z,3{alpha},6{alpha},8{alpha},8{alpha}{beta})]-6, 8-methano-2H-1,4-benzoxazin-2-one derivative 3a or 3b as a single stereoisomer. L-Selectride promoted hydrogenation of the olefinic double bond of these derivatives, in presence of tertbutyl alcohol, afforded the corresponding [{sup 18}F]-3-[(2-fluorophenyl) methyl]-3,5,6,7,8,8a-hexahydro-7,7,8a-trimethyl-[3S-(3{alpha}, 6{alpha}, 8{alpha}8{alpha}{beta})]-6,8-methano-2H-1,4-benzoxazin-2-one derivatives (4a,b) without affecting the orientation of diasterofacial discrimination. Deprotection of the derivatives 4a,b yielded 6-[{sup 18}F]fluoro-L-DOPA (e.e. >90%, 3% radiochemical yield (EOB), total synthesis time 125 min, specific activity >2000 mCi/{mu}mol). Direct deprotection/reduction of the compounds 3a,b provides the enantiomeric mixture of 6-[{sup 18}F]fluoro-D,L-DOPA (10-12% radiochemical yield) and, after chiral separation, 6-[{sup 18}F]fluoro-L-DOPA (e.e. 98%, 4-5% radiochemical yield). (author).

Luminescence properties of undoped CsCaCl3 and CsSrCl3 crystalline scintillators

International Nuclear Information System (INIS)

Fujimoto, Yutaka; Saeki, Keiichiro; Koshimizu, Masanori; Asai, Keisuke; Yanagida, Takayuki

2015-01-01

Intrinsic luminescence properties of undoped CsCaCl 3 and CsSrCl 3 crystalline scintillators were studied. The crystal samples were grown by a vertical Bridgman method. Photoluminescence spectra of the crystals showed Auger-free luminescence (AFL) at 310 nm and self-trapped emission (STE) at 400 nm for CsCaCl 3 and 465 nm for CsSrCl 3 , when vacuum ultraviolet (VUV) light at 84 nm and 160 nm excited the crystals. X-ray excited radioluminescence spectra of the crystals showed some emission bands in the 280-600 nm wavelength range, which are owing to AFL, STE, and other origins such as lattice defects and impurities. Scintillation light yield was 400-300 ph/MeV, and the principal scintillation decay time about 2.5 ns and 12 ns for CsCaCl 3 and 1.8 ns and 13 ns for CsSrCl 3 . (author)

Synthesis and characterization of PVP/ Sb2S3 composite films

International Nuclear Information System (INIS)

Salema, A.M.; Marzouka, S.; Khafagib, M.G.

2005-01-01

Polyvinyl pyrrolidone has been successfully used as a matrix to embedded Sb 2 S 3 nanoparticles. PVP thin films containing 5-25 wt % Sb 2 S 3 were deposited onto glass substrates by dip coating. X-ray diffraction spectra revealed that Sb 2 S 3 crystals depressed as nanometer-sized in the PVP matrix and the result was confirmed via scanning electron microscopy. The transmission and reflection spectra of the prepared samples were recorded in the wavelength optical range 250-2500 nm. The transmission spectra of the films show that transmission valley shifts toward higher wavelengths with increasing Sb 2 S 3 wt %. The optical constants of the deposited films, such as refractive index, extinction coefficient were obtained using the transmission and reflection data. The spectral behaviour of the loss factor, as well as the real and imaginary parts of the optical conductivity were also presented

Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability.

Science.gov (United States)

Liu, Ruirui; Zhou, Xiao; Zhai, Jiwei; Song, Jun; Wu, Pengzhi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-08-16

A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb 4 -SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the Sb 2 Se 3 phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb 4 -SbSe thin film.

Centrosymmetry vs noncentrosymmetry in La{sub 2}Ga{sub 0.33}SbS{sub 5} and Ce{sub 4}GaSbS{sub 9} based on the interesting size effects of lanthanides: Syntheses, crystal structures, and optical properties

Energy Technology Data Exchange (ETDEWEB)

Zhao, Hua-Jun, E-mail: cszzl772002@yeah.net [Laboratory of Applied Research on the Characteristic Resources in the North of Guizhou Province, School of Chemistry and Chemical Engineering, Zunyi Normal College, Zunyi, Guizhou 563002 (China); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

2016-05-15

Two new quaternary sulfides La{sub 2}Ga{sub 0.33}SbS{sub 5} and Ce{sub 4}GaSbS{sub 9} have been prepared from stoichiometric elements at 1223 K in an evacuated silica tube. Interestingly, La{sub 2}Ga{sub 0.33}SbS{sub 5} crystallizes in the centrosymmetric structure, while Ce{sub 4}GaSbS{sub 9} crystallizes in the noncentrosymmetric structure, which show obvious size effects of lanthanides on the crystal structures of these two compounds. Ce{sub 4}GaSbS{sub 9} belongs to RE{sub 4}GaSbS{sub 9} (RE=Pr, Nd, Sm, Gd–Ho) structure type with a=13.8834(9) Å, b=14.3004(11) Å, c=14.4102(13) Å, V=2861.0(4) Å{sup 3}. The structure features infinite chains of [Ga{sub 2}Sb{sub 2}S{sub 11}{sup 10–}]{sub ∞} propagating along a direction separated by Ce{sup 3+} cations and S{sup 2−} anions. La{sub 2}Ga{sub 0.33}SbS{sub 5} adopts the family of La{sub 4}FeSb{sub 2}S{sub 10}-related structure with a=7.5193(6) Å, c=13.4126(17) Å, V=758.35(13) Å{sup 3}. Its structure is built up from the alternate stacking of La/Sb/S and La/Ga/S 2D building blocks. The La/Sb/S slabs consist of teeter-totter chains of Sb1S{sub 4} seesaws, which are connected via sharing the apexes of μ{sub 4}-S1. Moreover, La1 is positionally disordered with Sb1 and stabilized in a bicapped trigonal prismatic coordination sphere. Between these La/Sb/S slabs, La2S{sub 8} square antiprisms are connected via edge-sharing into 2D building blocks, creating tetrahedral sites partially occupied by the Ga1 atoms. UV/Vis diffuse reflectance spectroscopy study shows that the optical gap of La{sub 2}Ga{sub 0.33}SbS{sub 5} is about 1.76 eV. - Graphical abstract: Two new quaternary sulfides La{sub 2}Ga{sub 0.33}SbS{sub 5} and Ce{sub 4}GaSbS{sub 9} have been prepared by solid-state reactions. Ce{sub 4}GaSbS{sub 9} crystallizes in RE{sub 4}GaSbS{sub 9} (RE=Pr, Nd, Sm, Gd–Ho) structure type, while La{sub 2}Ga{sub 0.33}SbS{sub 5} belongs to the family of La{sub 4}FeSb{sub 2}S{sub 10}-related structure and exhibits an

First-principles study of amorphous Ga4Sb6Te3 phase-change alloys

Science.gov (United States)

Bouzid, Assil; Gabardi, Silvia; Massobrio, Carlo; Boero, Mauro; Bernasconi, Marco

2015-05-01

First-principles molecular dynamics simulations within the density functional theory framework were performed to generate amorphous models of the Ga4Sb6Te3 phase change alloy by quenching from the melt. We find that Ga-Sb and Ga-Te are the most abundant bonds with only a minor amount of Sb-Te bonds participating to the alloy network. Ga and four-coordinated Sb atoms present a tetrahedral-like geometry, whereas three-coordinated Sb atoms are in a pyramidal configuration. The tetrahedral-like geometries are similar to those of the crystalline phase of the two binary compounds GaTe and GaSb. A sizable fraction of Sb-Sb bonds is also present, indicating a partial nanoscale segregation of Sb. Despite the fact that the composition Ga4Sb6Te3 lies on the pseudobinary Ga Sb -Sb2Te3 tie line, the amorphous network can be seen as a mixture of the two binary compounds GaTe and GaSb with intertwined elemental Sb.

H2S-induced HCO3- secretion in the rat stomach--involvement of nitric oxide, prostaglandins, and capsaicin-sensitive sensory neurons.

Science.gov (United States)

Takeuchi, Koji; Ise, Fumitaka; Takahashi, Kento; Aihara, Eitaro; Hayashi, Shusaku

2015-04-30

Hydrogen sulfide (H2S) is known to be an important gaseous mediator that affects various functions under physiological and pathological conditions. We examined the effects of NaHS, a H2S donor, on HCO3(-) secretion in rat stomachs and investigated the mechanism involved in this response. Under urethane anesthesia, rat stomachs were mounted on an ex vivo chamber and perfused with saline. Acid secretion had been inhibited by omeprazole. The secretion of HCO3(-) was measured at pH 7.0 using a pH-stat method and by the addition of 10 mM HCl. NaHS (0.5-10 mM) was perfused in the stomach for 5 min. Indomethacin or L-NAME was administered s.c. before NaHS treatment, while glibenclamide (a KATP channel blocker), ONO-8711 (an EP1 antagonist), or propargylglycine (a cystathionine γ-lyase inhibitor) was given i.p. before. The mucosal perfusion of NaHS dose-dependently increased the secretion of HCO3(-), and this effect was significantly attenuated by indomethacin, L-NAME, and sensory deafferentation, but not by glibenclamide or ONO-8711. The luminal output of nitric oxide, but not the mucosal production of prostaglandin E2, was increased by the perfusion of NaHS. Mucosal acidification stimulated HCO3(-) secretion, and this response was inhibited by sensory deafferentation, indomethacin, L-NAME, and ONO-8711, but not by propargylglycine. These results suggested that H2S increased HCO3(-) secretion in the stomach, and this effect was mediated by capsaicin-sensitive afferent neurons and dependent on nitric oxide and prostaglandins, but not ATP-sensitive K(+) channels. Further study is needed to define the role of endogenous H2S in the mechanism underlying acid-induced gastric HCO3(-) secretion. Copyright © 2014 Elsevier Inc. All rights reserved.

Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

International Nuclear Information System (INIS)

Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

2008-01-01

Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

Si-Sb-Te materials for phase change memory applications

International Nuclear Information System (INIS)

Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

2011-01-01

Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

DENSE GAS TRACERS AND STAR FORMATION LAWS IN ACTIVE GALAXIES: APEX SURVEY OF HCN J = 4 → 3, HCO{sup +} J = 4 → 3, AND CS J = 7 → 6

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zhi-Yu; Gao, Yu; Zhao, Yinghe [Purple Mountain Observatory/Key Lab for Radio Astronomy, 2 West Beijing Road, Nanjing 210008 (China); Henkel, Christian; Menten, Karl M.; Güsten, Rolf [Max-Planck-Institut für Radioastronomie, Auf dem Hügel 69, D-53121 Bonn (Germany); Wang, Junzhi, E-mail: zyzhang@pmo.ac.cn [Shanghai Astronomical Observatory, 80 Nandan Road, Shanghai 200030 (China)

2014-04-01

We report HCN J = 4 → 3, HCO{sup +} J = 4 → 3, and CS J = 7 → 6 observations in 20 nearby star-forming galaxies with the Atacama Pathfinder EXperiment 12 m telescope. Combined with four HCN, three HCO{sup +}, and four CS detections from the literature, we probe the empirical link between the luminosity of molecular gas (L{sub gas}{sup ′}) and that of infrared emission (L {sub IR}), up to the highest gas densities (∼10{sup 6} cm{sup –3}) that have been probed so far. For nearby galaxies with large radii, we measure the IR luminosity within the submillimeter beam size (14''-18'') to match the molecular emission. We find linear slopes for L{sub CS} {sub J=7--6}{sup ′}-L {sub IR} and L{sub HCN} {sub J=4--3}{sup ′}-L {sub IR}, and a slightly super-linear slope for L{sub HCO{sup +}} {sub J=4--3}{sup ′}-L {sub IR}. The correlation of L{sub CS} {sub J=7--6}{sup ′}-L {sub IR} even extends over eight orders of luminosity magnitude down to Galactic dense cores, with a fit of log(L {sub IR}) =1.00(± 0.01) ×log(L{sub CS} {sub J=7--6}{sup ′}) + 4.03(± 0.04). Such linear correlations appear to hold for all densities >10{sup 4} cm{sup –3}, and indicate that star formation rate is not related to the free-fall timescale for dense molecular gas.

Zeta potential study of Sb2S3 nanoparticles synthesized by a facile polyol method in various surfactants

Science.gov (United States)

Saxena, Monika; Okram, Gunadhor Singh

2018-05-01

In the present work, we report the successful synthesis of stibnite Sb2S3 nanoparticles (NPs) by a facile polyol method using various surfactant. The structural and optical properties were investigated by X-ray diffraction (XRD), Raman spectroscopy and Zeta potential. Rietveld refinement of XRD data confirms the single phase orthorhombic crystal structure of stibnite Sb2S3. Presence of six obvious Raman modes further confirmed their stoichiometric formation. Effect of different surfactants on the surface charge of Sb2S3 NPs was studied using Zeta potential measurement in deionized water at different pH values. They reveal that these NPs are more stable when it was synthesized in presence of EDTA than that of CTAB or without surfactant samples with high zeta potential. The isoelectronic point was found at pH = 6.4 for pure sample, 3.5 and 7.2 for CTAB and not found for EDTA Sb2S3 samples. This information can be useful for many industrial applications like pharmaceuticals, ceramics, waste water treatment and medicines.

Precipitation behaviors of Cs and Re(/Tc) by NaTPB and TPPCl from a simulated fission products-(Na2CO3-NaHCO3)-H2O2 solution

International Nuclear Information System (INIS)

Lee, Eil Hee; Lim, Jae Gwan; Chung, Dong Yong; Yang, Han Beum; Kim, Kwang Wook

2010-01-01

In this study, the removal of Cs and Tc from a simulated fission products (FP) solution which were co-dissolved with U during the oxidative-dissolution of spent fuel in a mixed carbonate solution of (Na 2 CO 3 -NaHCO 3 )-H 2 O 2 was investigated by using a selective precipitation method. As Cs and Tc might cause an unstable behavior due to the high decay heat emission of Cs as well as the fast migration of Tc when disposed of underground, it is one of the important issues to removal them in views of the increase of disposal safety. The precipitation of Cs and Re (as a surrogate for Tc) was examined by introducing sodium tetraphenylborate (NaTPB) and tetraphenylphosponium chloride (TPPCl), respectively. Precipitation of Cs by NaTPB and that of Re by TPPCl were completed within 5 minutes. Their precipitation rates were not influenced so much by the temperature and stirring speed even if they were increased by up to 50 .deg. C and 1,000 rpm. However, the pH of the solution was found to have a great influence on the precipitation with NaTPB and TPPCl. Since Mo tends to co-precipitate with Re at a lower pH, especially, it was effective that a selective precipitation of Re by TPPCl was carried out at pH of above 9 without co-precipitation of Mo and Re. Over 99% of Cs was precipitated when the ratio of [NaTPB]/[Cs]>1 and more than 99% of Re, likewise, was precipitated when the ratio of [TPPCl]/[Re]>1.

Comparisons of TRAC-PF-1 calculations with semiscale Mod-3 small-break tests S-SB-P1 and S-SB-P7

International Nuclear Information System (INIS)

Sahota, M.S.

1982-01-01

Semiscale Tests S-SB-P1 and S-SB-P7 conducted in the Semiscale Mod-3 facility at the Idaho National Engineering Laboratory are analyzed using the latest released version of the Transient Reactor Analysis Code (TRAC-PF1). The results are used to assess TRAC-PF1 predictions of thermal-hydraulic phenomena and the effects of break size and pump operation on system response during slow transients. Tests S-SB-P1 and S-SB-P7 simulated an equivalent pressurized-water-reactor (PWR) 2.5% communicative cold-leg break for early and late pump trips, respectively, with only high-pressure injection (HPI) into the cold legs. The parameters examined include break flow, primary-system pressure response, primary-system mass distribution, and core characteristics

Characteristics of phase transition and separation in a In-Ge-Sb-Te system

Energy Technology Data Exchange (ETDEWEB)

Park, Sung Jin [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Jang, Moon Hyung [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104 (United States); Park, Seung-Jong [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Cho, Mann-Ho, E-mail: mh.cho@yonsei.ac.kr [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Ko, Dae-Hong [Department of Material Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

2012-10-01

Highlights: Black-Right-Pointing-Pointer InGeSbTe films were fabricated via co-deposition stoichiometric GST and IST targets. Black-Right-Pointing-Pointer As the amount of IST was increased in InGeSbTe, the value for V{sub th} and the phase transition temperature were increased. Black-Right-Pointing-Pointer The phase separation in InGeSbTe is caused by differences in the enthalpy change for formation and different atomic concentrations. - Abstract: In-doped GeSbTe films were deposited by ion beam sputtering deposition (IBSD) using Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) and In{sub 3}Sb{sub 1}Te{sub 2} (IST) as targets. The phase change characteristics of the resulting films were then investigated by electrical measurements, including static testing, in situ 4-point R{sub s} measurements, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The threshold voltage of the films increased, with increasing levels of IST. This phenomenon is consistent with the increased crystallization temperature in X-ray data and in situ 4-point R{sub s} data. In addition, in In{sub 28}Ge{sub 12}Sb{sub 26}Te{sub 34}, multiple V{sub th} values with a stepwise change are observed. The minimum time for the crystallization of InGeSbTe films was shorter than that for GST. X-ray data and Raman data for the crystalline structure show that phase separation to In{sub 2}Te{sub 3} occurred in all of the InGeSbTe samples after annealing at 350 Degree-Sign C. Moreover, in the case of InGeSbTe films with high concentrations of In (28 at.%), Sb phase separation was also observed. The observed phases indicate that the origin of the phase separation of InGeSbTe films is from the enthalpy change of formation and differences in Ge-Te, In-Te, Sb-Te, In-Sb and In-In bond energies.

Peculiarities of thermoelectric half-Heusler phase formation in Zr–Co–Sb ternary system

Energy Technology Data Exchange (ETDEWEB)

Romaka, V.V., E-mail: romakav@lp.edu.ua [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Romaka, L. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Rogl, P. [Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Stadnyk, Yu. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Melnychenko, N. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Army Academy named after Hetman Petro Sahaydachnyi, Gvardijska Str. 32, 79012 Lviv (Ukraine); Korzh, R.; Duriagina, Z. [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Horyn, A. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine)

2014-02-05

Highlights: • Phase relations for the Zr–Co–Sb system at 500 °C. • Homogeneity region for half-Heusler phase. • The distribution of DOS for Zr{sub 1+x}Co{sub 1−x}Sb predicts transition from semiconductor (x = 0) to metallic (x = 0.13) like behavior. • The existence of the solid solution Zr{sub 5}Co{sub x}Sb{sub 3+y} (x = 0.0–1.0, y = 0.0–1.0). -- Abstract: The phase equilibria in the Zr–Co–Sb ternary system were studied at 873 K by means of X-ray and metallographic analyses in the whole concentration range. The interaction between the elements results the formation of four ternary compounds at investigated temperature: ZrCoSb (MgAgAs-type), Zr{sub 6}CoSb{sub 2} (K{sub 2}UF{sub 6}-type), Zr{sub 5}CoSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type) and Zr{sub 5}Co{sub 0.5}Sb{sub 2.5} (W{sub 5}Si{sub 3}-type). The limited composition Zr{sub 5}CoSb{sub 3} of the solid solution based on the Zr{sub 5}Sb{sub 3−4} binaries is considered as compound with Hf{sub 5}CuSn{sub 3} structure type. The influence of the disordering and defects in the crystal structure of ZrCoSb on the physical properties was analyzed. The performed electronic structure calculations are in good agreement with electrical and magnetic studies.

Heterogeneous nucleation of Mg2Si on Sr11Sb10 nucleus in Mg–x(3.5, 5 wt.%)Si–1Al alloys

International Nuclear Information System (INIS)

Wang, Hui-Yuan; Chen, Lei; Liu, Bo; Li, Xiao-Ran; Wang, Jin-Guo; Jiang, Qi-Chuan

2012-01-01

After combined additions of Sr and Sb, most primary Mg 2 Si crystals in Mg–3.5Si–1Al and Mg–5Si–1Al alloys transformed from equiaxed-dendritic shapes to octahedral morphologies; while eutectic phases also changed from Chinese script to short rod-shapes. The mechanisms of complex modification of Sr and Sb were attributed to the heterogeneous nucleation of primary Mg 2 Si on Sr 11 Sb 10 nucleus, together with change in growth manners caused by incorporation of Sb in Mg 2 Si crystals. -- Highlights: ► The Sr 11 Sb 10 is the heterogeneous nucleation of primary Mg 2 Si in Mg–3.5Si–1Al alloys. ► Some Sb atoms were incorporated by substituting Si which changed growth manners of primary Mg 2 Si. ► Primary Mg 2 Si transformed from equiaxed-dendritic to octahedral after modification. ► Eutectic phases changed from Chinese script to short rod-shapes after modification.

Thermal, conductivity, NMR, and Raman spectroscopic measurements and phase diagram of the Cs2S2O7-CsHSO4 system

DEFF Research Database (Denmark)

Rasmussen, Søren Birk; Hama, Hind; Lapina, Olga

2003-01-01

The conductivity of the binary system CS2S2O7-CsHSO4 has been measured at 20 different molten compositions in the full composition range and in the temperature range 430-750 K. From the obtained liquidus-solidus phase transition temperatures, the phase diagram has been constructed. It is of the s......The conductivity of the binary system CS2S2O7-CsHSO4 has been measured at 20 different molten compositions in the full composition range and in the temperature range 430-750 K. From the obtained liquidus-solidus phase transition temperatures, the phase diagram has been constructed...... from the NMR measurements on CsHSO4, CS2S2O7, and Cs2S2O7-CsHSO4 mixtures. For 11 selected compositions covering the entire composition range of the CS2S2O7-CsHSO4 binary system, the conductivity of the molten state has been expressed by equations of the form k(X) = A(X) + B(X)(T - T-m) + C(X)(T - T...

Study on anisotropy of n-type Mg3Sb2-based thermoelectric materials

Science.gov (United States)

Song, Shaowei; Mao, Jun; Shuai, Jing; Zhu, Hangtian; Ren, Zhensong; Saparamadu, Udara; Tang, Zhongjia; Wang, Bo; Ren, Zhifeng

2018-02-01

The recent discovery of a high thermoelectric figure of merit (ZT) in an n-type Mg3Sb2-based Zintl phase triggered an intense research effort to pursue even higher ZT. Based on our previous report on Mg3.1Nb0.1Sb1.5Bi0.49Te0.01, we report here that partial texturing in the (001) plane is achieved by double hot pressing, which is further confirmed by the rocking curves of the (002) plane. The textured samples of Mg3.1Nb0.1Sb1.5Bi0.49Te0.01 show a much better average performance in the (00l) plane. Hall mobility is significantly improved to ˜105 cm2 V-1 s-1 at room temperature in the (00l) plane due to texturing, resulting in higher electrical conductivity, a higher power factor of ˜18 μW cm-1 K-2 at room temperature, and also higher average ZT. This work shows that texturing is good for higher thermoelectric performance, suggesting that single crystals of n-type Mg3Sb2-based Zintl compounds are worth pursuing.

Perovskite phases in the systems Asup(II)O-UO/sub 3/. 1. Tetragonal perovskite Ba/sub 2/Basub(7/8)vacantsub(1/8)UO/sub 5/sub(7/8)

Energy Technology Data Exchange (ETDEWEB)

Griffiths, A J; Kemmler-Sack, S [Tuebingen Univ. (Germany, F.R.)

1979-10-01

The new tetragonal compound Ba/sub 2/Basub(7/8)vacantsub(1/8)UO/sub 5/sub(7/8) (a = 2 x 6.31/sub 2/ A; c = 2 x 8.76/sub 7/ A) has been found besides Ba/sub 3/UO/sub 6/ (triclinic) in the BaO-UO/sub 3/ system. It crystallizes with a superstructure of perovskite type. The differences in properties between Ba/sub 3/UO/sub 6/ and Ba/sub 2/Basub(7/8)vacantsub(1/8) UO/sub 5/sub(7/8) are discussed.

Temperature-dependent phase separation during annealing of Ge{sub 2}Sb{sub 2}Te{sub 5} thin films in vacuum

Energy Technology Data Exchange (ETDEWEB)

Zhang Zheng [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore117602 (Singapore); Pan Jisheng, E-mail: js-pan@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore117602 (Singapore); Fang, Lina Wei-Wei; Yeo, Yee-Chia [Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 119260 (Singapore); Foo, Yong Lim [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore117602 (Singapore); Zhao Rong; Shi Luping [Data Storage Institute, A-STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Tok, Eng Soon [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore117602 (Singapore); Department of Physics, National University of Singapore (NUS), Singapore 119260 (Singapore)

2012-06-01

Thermal stability of 100 nm Ge{sub 2}Sb{sub 2}Te{sub 5} thin film during annealing from room temperature to 240 Degree-Sign C inside a UHV chamber was studied in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD) and atomic force microscopy (AFM). Ge species are found to diffuse preferentially to the surface when GST film is annealed from 25 Degree-Sign C to 100 Degree-Sign C. This process is accompanied by a change of phase whereby the amorphous film completely becomes face-center-cubic (FCC) phase at 100 Degree-Sign C. From 100 Degree-Sign C to 200 Degree-Sign C, both Sb and Te species are observed to diffuse more to the surface. The FCC phase is partially changed into hexagonal-close-pack (HCP) phase at 200 Degree-Sign C. At 220 Degree-Sign C, FCC phase is completely transformed into HCP phase. Loss of Sb and Te are also detected from the surface and this is attributed to desorption due to their high vapor pressures. At 240 Degree-Sign C, Sb and Te species are found to have desorbed completely from the surface, and leave behind Ge-rich 3D droplets on the surface. The separation of Ge{sub 2}Sb{sub 2}Te{sub 5} into Sb,Te-rich phase and Ge-rich phase is thus the main mechanism to account for the failure of Ge{sub 2}Sb{sub 2}Te{sub 5}-based phase change memory devices under thermal stress.

Electrical conduction of glasses in the system Fe2O3-Sb2O3-TeO2; Fe2O3-Sb2O3-TeO2 kei garasu no denki dendo

Energy Technology Data Exchange (ETDEWEB)

Qiu, Honghua; Mori, H; Sakata, H; Hirayama, T [Tokai Univ., Tokyo (Japan). Faculty of Engineering

1995-01-01

In this study, taking into consideration that TeO2 is a component of the glass network and Sb2O3 shows the redox effect in the glasses reducing its possibility of transformation of Sb{sup 3+} to Sb{sup 5+} as well as glass basicity, highly conductive tellurite based glasses have been prepared by the press-quenching method selecting the Fe2O3-Sb2O3-TeO2 system, and the electroconductive mechanism of the glasses has been examined by measuring its D.C. conductivity {sigma}. Part of the obtained information is as follows; the glass formation range of the Fe2O3-Sb2O3-TeO2 system has been 0 {le} Fe2O3 {le} 15mol%, 0 {le} Sb2O3 {le} 18mol% and 78 {le} TeO2 {le} 100mol% and about 15mol% of the additional amount of Fe2O3 has been the limit of glass formation. As the amount of Fe2O3 has increased, C{sub Fe} has also increased and with this, the linear electroconductivity of the glasses has increased from 1.86 {times} 10{sup -7}S{center_dot}cm{sup -1} to 1.62 {times} 10{sup -6}S{center_dot}cm{sup -1} and the glasses have been confirmed as the n-type semiconductor. The factor determining {sigma} of the glasses has been C{sub Fe} which has increased as the amount of Fe2O3 has increased. 34 refs., 8 figs., 2 tabs.

A tentative interpretation for the difference in the abundance ratios HCO(+)/CO and HCS(+)/CS in interstellar space

Science.gov (United States)

Talbi, D.; Hickman, A. P.; Pauzat, F.; Ellinger, Y.; Berthier, G.

1989-04-01

It is shown here that the difference of two orders of magnitude between the values of the abundance ratios HCO(+)/CO and HCS(+)/CS in interstellar clouds can be directly related to the difference in the reaction rates of the dissociative recombination reactions of the positive ions. The potential energy curves of the systems (HCO+ + e-) and (HCS+ + e-) in Rydberg and dissociative valence states, as well as those of the positive ions CHO+ and HCS+, are computed by ab initio quantum chemistry methods. The potential surfaces of the two systems show striking differences, suggesting that the dissociative processes, direct and indirect, should be more efficient for HCO.

A tentative interpretation for the difference in the abundance ratios HCO(+)/CO and HCS(+)/CS in interstellar space

International Nuclear Information System (INIS)

Talbi, D.; Hickman, A.P.; Pauzat, F.; Ellinger, Y.; Berthier, G.

1989-01-01

It is shown here that the difference of two orders of magnitude between the values of the abundance ratios HCO(+)/CO and HCS(+)/CS in interstellar clouds can be directly related to the difference in the reaction rates of the dissociative recombination reactions of the positive ions. The potential energy curves of the systems (HCO+ + e-) and (HCS+ + e-) in Rydberg and dissociative valence states, as well as those of the positive ions CHO+ and HCS+, are computed by ab initio quantum chemistry methods. The potential surfaces of the two systems show striking differences, suggesting that the dissociative processes, direct and indirect, should be more efficient for HCO. 23 refs

Emergence of topological and topological crystalline phases in TlBiS2 and TlSbS2

KAUST Repository

Zhang, Qingyun

2015-02-11

Using first-principles calculations, we investigate the band structure evolution and topological phase transitions in TlBiS2 and TlSbS2 under hydrostatic pressure as well as uniaxial and biaxial strain. The phase transitions are identified by parity analysis and by calculating the surface states. Zero, one, and four Dirac cones are found for the (111) surfaces of both TlBiS2 and TlSbS2 when the pressure grows, which confirms trivial-nontrivial-trivial phase transitions. The Dirac cones at the (M) over bar points are anisotropic with large out-of-plane component. TlBiS2 shows normal, topological, and topological crystalline insulator phases under hydrostatic pressure, thus being the first compound to exhibit a phase transition from a topological to a topological crystalline insulator.

Emergence of topological and topological crystalline phases in TlBiS2 and TlSbS2

KAUST Repository

Zhang, Qingyun; Cheng, Yingchun; Schwingenschlö gl, Udo

2015-01-01

Using first-principles calculations, we investigate the band structure evolution and topological phase transitions in TlBiS2 and TlSbS2 under hydrostatic pressure as well as uniaxial and biaxial strain. The phase transitions are identified by parity analysis and by calculating the surface states. Zero, one, and four Dirac cones are found for the (111) surfaces of both TlBiS2 and TlSbS2 when the pressure grows, which confirms trivial-nontrivial-trivial phase transitions. The Dirac cones at the (M) over bar points are anisotropic with large out-of-plane component. TlBiS2 shows normal, topological, and topological crystalline insulator phases under hydrostatic pressure, thus being the first compound to exhibit a phase transition from a topological to a topological crystalline insulator.

Selective Se-for-S substitution in Cs-bearing uranyl compounds

Energy Technology Data Exchange (ETDEWEB)

Gurzhiy, Vladislav V., E-mail: vladgeo17@mail.ru [Department of Crystallography, St. Petersburg State University, University Emb. 7/9, 199034 St. Petersburg, Russia Federation (Russian Federation); Tyumentseva, Olga S.; Krivovichev, Sergey V. [Department of Crystallography, St. Petersburg State University, University Emb. 7/9, 199034 St. Petersburg, Russia Federation (Russian Federation); Tananaev, Ivan G. [Far Eastern Federal University, Suhanova st. 8, Vladivostok 690950 (Russian Federation)

2017-04-15

Phase formation in the mixed sulfate-selenate aqueous system of uranyl nitrate and cesium nitrate has been investigated. Two types of crystalline compounds have been obtained and characterized using a number of experimental (single crystal XRD, FTIR, SEM) and theoretical (information-based complexity calculations, topological analysis) techniques. No miscibility gaps have been observed for Cs{sub 2}[(UO{sub 2}){sub 2}(TO{sub 4}){sub 3}] (T= S, Se), which crystallizes in tetragonal system, P-42{sub 1}m, a =9.616(1)–9.856(2), c =8.105(1)–8.159(1) Å, V =749.6(2)–792.5(3) Å{sup 3}. Nine phases with variable amount of S and Se have been structurally characterized. The structures of the Cs{sub 2}[(UO{sub 2}){sub 2}(TO{sub 4}){sub 3}] (T= S, Se) compounds are based upon the [(UO{sub 2}){sub 2}(TO{sub 4}){sub 3}]{sup 2-} layers of corner-sharing uranyl pentagonal bipyramids and TO{sub 4} tetrahedra. The layers contain two types of tetrahedral sites: T1 (3-connected, i.e. having three O atoms shared by adjacent uranyl polyhedra) and T2 (4-connected). The Se-for-S substitution in tetrahedral sites is highly selective with smaller S{sup 6+} cation showing a strong preference for the more tightly bonded T2 site. Crystallization in the pure Se system starts with the formation of Cs{sub 2}[(UO{sub 2})(SeO{sub 4}){sub 2}(H{sub 2}O)](H{sub 2}O) crystals, its subsequent dissolution and formation of Cs{sub 2}[(UO{sub 2}){sub 2}(SeO{sub 4}){sub 3}]. The information-based structural complexity calculations for these two phases support the rule that more topologically complex structures form at the latest stages of crystallization. - Graphical abstract: Nine phases representing the Cs{sub 2}[(UO{sub 2}){sub 2}(TO{sub 4}){sub 3}] (T= S, Se) solid solution series with variable amount of S and Se have been prepared by isothermal evaporation from aqueous solutions and characterized using a number of experimental and theoretical techniques. No immiscibility is observed between the

(1−x)[(K$_{0.5}$Na$_{0.5}$)NbO$_3$–LiSbO$_3

Indian Academy of Sciences (India)

Lead-free piezoelectric ceramics ( 1 − x ) [0.95(K 0.5 Na 0.5 )NbO 3 –0.05LiSbO 3 ]– x BiFe 0.8 Co 0.2 O 3 (KNN–LS– x BFC) were prepared by a conventional sintering technique. The effect of BFC content on the structure, piezoelectricand electrical properties of KNN–LS ceramics was investigated. The results reveal that ...

Effect of tungsten on the phase-change properties of Ge_8Sb_2Te_1_1 Thin Films for the Phase-change device

International Nuclear Information System (INIS)

Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

2017-01-01

In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge_8Sb_2Te_1_1 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge_8Sb_2Te_1_1 and W-doped Ge_8Sb_2Te_1_1 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E_o_p), slope B"1"/"2, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B"1"/"2 and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge_8Sb_2Te_1_1 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T_c). An increase in the T_c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R_s) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

Chemically deposited Sb2S3 thin films for optical recording

International Nuclear Information System (INIS)

Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B; O'Brien, J J; Liu, J

2010-01-01

Laser induced changes in the properties of Sb 2 S 3 thin films prepared by chemical bath deposition are described in this paper. Sb 2 S 3 thin films of thickness 550 nm were deposited from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 0 C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

Determination and modeling of binary and ternary solid-liquid phase equilibrium for the systems formed by 1,8-dinitronaphthalene and 1,5-dinitronaphthalene and N-methyl-2-pyrrolidone

International Nuclear Information System (INIS)

Xie, Yong; Du, Cunbin; Cong, Yang; Wang, Jian; Han, Shuo; Zhao, Hongkun

2016-01-01

Highlights: • SLE formed by 1,5 and/or 1,8-dinitronaphthalene and NMP was determined. • The binary and ternary phase diagrams were constructed. • The phase diagrams were correlated and calculated using thermodynamic models. - Abstract: The solubility of 1,8-dinitronaphthalene and 1,5-dinitronaphthalene in N-methyl-2-pyrrolidone at (293.15–343.15) K and the mutual solubility of the ternary 1,5-dinitronaphthalene + 1,8-dinitronaphthalene + N-methyl-2-pyrrolidone mixture at (313.15, 328.15 and 343.15) K were determined experimentally using the isothermal saturation method under atmospheric pressure (101.2 kPa). The solubility of 1,8-dinitronaphthalene in N-methyl-2-pyrrolidone is larger than that of 1,5-dinitronaphthalene. Three isothermal ternary phase diagrams were built according to the measured mutual solubility data. In each ternary phase diagram, there were one co-saturated point, two boundary curves, and three crystalline regions. Two pure solids (pure 1,8-dinitronaphthalene and pure 1,5-dinitronaphthalene) were formed in the ternary system at a given temperature, which were identified by Schreinemaker’s method of wet residue and powder X-ray diffraction (PXRD) pattern. The crystallization region of 1,8-dinitronaphthalene was smaller than that of 1,5-dinitronaphthalene at each temperature. The modified Apelblat equation, λh equation, NRTL model and Wilson model were used to correlate the solubility of 1,8-dinitronaphthalene and 1,5-dinitronaphthalene in N-methyl-2-pyrrolidone; and the NRTL and Wilson models were employed to correlate and calculate the mutual solubility for the ternary 1,5-dinitronaphthalene + 1,8-dinitronaphthalene + N-methyl-2-pyrrolidone system. The largest value of root-mean-square deviation (RMSD) was 20.34 × 10 −4 for the binary systems; and 7.38 × 10 −3 for ternary system. The calculated results via these models are all acceptable for the binary and ternary solid-liquid phase equilibrium.

Sodium antimony sulfide (NaSbS2: Turning an unexpected impurity into a promising, environmentally friendly novel solar absorber material

Directory of Open Access Journals (Sweden)

Siti Utari Rahayu

2016-11-01

Full Text Available We present a novel absorber material—NaSbS2—for solar cells. NaSbS2 is formed as an unexpected byproduct in the chemical synthesis of Sb2S3. However, NaSbS2 has many attractive features for a solar material. Here single phase NaSbS2 nanoparticles were synthesized through solution processing. NaSbS2 semiconductor-sensitized solar cells were demonstrated for the first time. The best cell yielded Jsc = 10.76 mA/cm2, Voc = 0.44 V, FF = 48.6%, and efficiency η = 2.30% under 1 sun. At the reduced 0.1 sun, the η increased to 3.18%—a respectable η for a new solar material.

Si{sub 2}Sb{sub 2}Te{sub 5} phase change material studied by an atomic force microscope nano-tip

Energy Technology Data Exchange (ETDEWEB)

Liu Yanbo; Min Guoquan; Zhang Jing; Zhou Weimin; Wan Yongzhong; Zhang Jianping; Li Xiaoli [Laboratory of Nano-Technology, Shanghai Nanotechnology Promotion Center, Shanghai 200237 (China); Zhang Ting; Niu Xiaoming; Song Zhitang; Feng Songlin, E-mail: liuyanbo@snpc.org.c, E-mail: tzhang@mail.sim.ac.c [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2009-06-01

The Si{sub 2}Sb{sub 2}Te{sub 5} phase change material has been studied by applying a nano-tip (30 nm in diameter) on an atomic force microscopy system. Memory switching from a high resistance state to a low resistance state has been achieved, with a resistance change of about 1000 times. In a typical I-V curve, the current increases significantly after the voltage exceeds approx4.3 V. The phase transformation of a Si{sub 2}Sb{sub 2}Te{sub 5} film was studied in situ by means of in situ X-ray diffraction and temperature dependent resistance measurements. The thermal stability of Si{sub 2}Sb{sub 2}Te{sub 5} and Ge{sub 2}Sb{sub 2}Te{sub 5} was characterized and compared as well.

Ultrafast crystallization and thermal stability of In-Ge doped eutectic Sb70Te30 phase change material

International Nuclear Information System (INIS)

Lee Meiling; Miao Xiangshui; Ting Leehou; Shi Luping

2008-01-01

Effect of In and Ge doping in the form of In 2 Ge 8 Sb 85 Te 5 on optical and thermal properties of eutectic Sb 70 Te 30 alloys was investigated. Crystalline structure of In 2 Ge 8 Sb 85 Te 5 phase change material consists of a mixture of phases. Thermal analysis shows higher crystallization temperature and activation energy for crystallization. Isothermal reflectivity-time measurement shows a growth-dominated crystallization mechanism. Ultrafast crystallization speed of 30 ns is realized upon irradiation by blue laser beam. The use of ultrafast and thermally stable In 2 Ge 8 Sb 85 Te 5 phase change material as mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability

Cs[FeSe{sub 2}], Cs{sub 3}[FeSe{sub 2}]{sub 2}, and Cs{sub 7}[Fe{sub 4}Se{sub 8}]. Missing links of known chalcogenido ferrate series

Energy Technology Data Exchange (ETDEWEB)

Stueble, Pirmin; Roehr, Caroline [Institut fuer Anorganische und Analytische Chemie, Universitaet Freiburg (Germany)

2017-11-17

The three cesium selenido ferrate title compounds with an Se:Fe ratio of 2:1 were synthesized from stoichiometric samples reacting elemental Cs either (A) with Fe and Se in a double-crucible setup (Cs[FeSe{sub 2}], Cs{sub 3}[FeSe{sub 2}]{sub 2}) or (B) with previously prepared FeSe{sub 2} (Cs{sub 3}[FeSe{sub 2}]{sub 2}, Cs{sub 7}[Fe{sub 4}S{sub 8}]) (T{sub max} = 800-1000 C). The pure Fe{sup III} ferrate Cs[FeSe{sub 2}] crystallizes in the Tl[FeSe{sub 2}] type [monoclinic, space group C2/m, a = 1392.95(10), b = 564.43(3), c = 737.44(6) pm, β = 119.163(5) , Z = 4, R{sub 1} = 0.0550]. It is thus not isotypic to all other alkali ferrates(III) A[FeS{sub 2}] and A[FeSe{sub 2}] containing chains of edge-sharing tetrahedra, but crystallizes in a t2 subgroup of the Immm structure of Cs[FeS{sub 2}]. The mixed-valent chain compound Cs{sub 3}[FeSe{sub 2}]{sub 2} is isotypic to its sulfido analogue [orthorhombic, space group Pnma, a = 777.88(6), b = 1151.02(6), c = 1341.61(7) pm, Z = 4, R{sub 1} = 0.0470]. In contrast to the isopunctal Na{sub 3}[FeSe{sub 2}]{sub 2} type K/Rb compounds the chains are only slightly corrugated. The monoclinic, likewise mixed-valent Fe{sup II/III} selenido ferrate Cs{sub 7}[Fe{sub 4}Se{sub 8}] [monoclinic, space group C2/c, a = 1953.79(10), b = 879.71(5), c = 1717.03(10) pm, β = 117.890(2) , Z = 4, R{sub 1} = 0.0816] is isostructural both to the cesium sulfido and tellurido compound. The structure contains oligomeric moieties of four edge sharing [FeSe{sub 4}] tetrahedra forming slightly distorted tetrahedral clusters [Fe{sub 4}Se{sub 8}]{sup 7-}, which are surrounded by a cube of 26 Cs cations. Based on a structure map, the crystal chemistry of the three title compounds is discussed together with all chain/cluster ferrates of the general series A{sub 1+x}[Fe{sup III}{sub 1-x}Fe{sup II}{sub x}Q{sub 2}] (x = 0-1; A = Na, K, Rb, Cs; Q = S, Se, Te). (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effects of Complex Modification by Sr-Sb on the Microstructures and Mechanical Properties of Al-18 wt % Mg₂Si-4.5Cu Alloys.

Science.gov (United States)

Sun, Youhong; Ma, Shaoming; Wang, Huiyuan; Chen, Lei; Gao, Ke; Ma, Yinlong; Liu, Baochang

2016-03-04

This research was carried out to investigate the influence of Sr-Sb on the microstructures and mechanical properties of Al-18 wt % Mg₂Si-4.5Cu alloys. After the addition of 0.2 wt % Sr-Sb, the morphologies of primary Mg₂Si transformed from equiaxed dendrite to cube in as-cast alloys and the average size of primary Mg₂Si decreased from ~50 to ~20 μm. The shape of eutectic Mg₂Si changed from Chinese script to short rod. After extrusion and T6 heat treatment, the ultimate tensile strength of modified alloy at room temperature (RT) and 100 °C increased respectively from 229 to 288 MPa, and from 231 to 272 MPa. The elongation-to-failure only slightly improved from 2.9% to 3.8% and from 3.3% to 3.7% at RT and 100 °C, respectively. The tensile fracture surface revealed a transition from brittle fracture to ductile fracture after modifying by 0.2 wt % Sr-Sb.

2,5-Bis[(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctylsulfanyl]-1,3,4-thiadiazole

Directory of Open Access Journals (Sweden)

Gabriel Partl

2017-02-01

Full Text Available The title compound, C18H8F26N2S3, was obtained by double S-perfluorohexylethylation of dipotassium 1,3,4-thiadiazole-2,5-dithiolate in methanol. The molecule exhibits twofold rotational symmetry, with the S atom lying on the rotation axis. The fluorocarbon chains adopt helical conformations and the F atoms of the two terminal C atoms are disordered over two sets of sites. No directional intermolecular interactions occur in the crystal.

Synthesis, crystal structure, and physical properties of the Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8} phases

Energy Technology Data Exchange (ETDEWEB)

Forbes, Scott; Yuan, Fang [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada); Kosuda, Kosuke; Kolodiazhnyi, Taras [Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Mozharivskyj, Yurij, E-mail: mozhar@mcmaster.ca [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada)

2016-01-15

The second and third known rare-earth bismuthide oxides, Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8}, have been discovered via high temperature reactions at 1300 °C. Like its Gd–Sb–O counterparts, the Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8} phases crystallize in the monoclinic C2/m space group, with the latter containing disordered Bi atoms along the b direction of the unit cell. Unlike the RE{sub 8}Sb{sub 3}O{sub 8} series, the formation of the Gd{sub 3}BiO{sub 3} phase does not necessarily precede the formation of Gd{sub 8}Bi{sub 3}O{sub 8}, which is likely due to the difficulty of accommodating bismuth in the RE–O framework due to its larger size. Physical property measurements performed on a pure Gd{sub 8}Bi{sub 3}O{sub 8} sample reveal semiconducting behavior. Although electronic structure calculations predict metallic behavior due to an unbalanced electron count, the semiconducting behavior originates from the Anderson localization of the Bi p states near the Fermi level as a result of atomic disorder. - Graphical abstract: Reaction of GdBi and Gd{sub 2}O{sub 3} at high temperatures yields Gd–Bi–O phases. - Highlights: • Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8}, the second and third rare-earth bismuthide oxides, have been discovered. • Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8} are isostructural with RE{sub 3}SbO{sub 3} and RE{sub 8}Sb{sub 3}O{sub 8}. • Gd{sub 8}Bi{sub 3}O{sub 8} displays semiconducting behavior despite an unbalanced electron count. • Anderson localization of Bi p states results in semiconducting behavior in Gd{sub 8}Bi{sub 3}O{sub 8}.

Soft-template synthesis and optical Properties of Sb2S3 semiconductor quasi-nanospheres

International Nuclear Information System (INIS)

Wu Qingsheng; Zhang Guoxin; Ding Yaping

2006-01-01

The reverse micelle system composed of four phases of Hexamethylene/Triton-100/n-pentanol/water (containing 1 ml 0.1 M Sb 3+ or 1 ml 0.1 M S 2- ), which ratio is 28:3:1:1, is prepared. Sb 2 S 3 quasi-nanospheres with diameters between 160 and 240 nm are synthesized by above reverse micelle soft-template system. The result shows that the fluorescence peaks have a blue shift about 19 nm when it is excited at 219 nm, and the UV-Vis absorption peaks shift about 453 nm (2.74 eV)

Structural transformations in Ge{sub 2}Sb{sub 2}Te{sub 5} under high pressure and temperature

Energy Technology Data Exchange (ETDEWEB)

Mio, A. M.; Privitera, S., E-mail: stefania.privitera@imm.cnr.it; D' Arrigo, G.; Rimini, E. [IMM-CNR, Istituto per la Microelettronica e Microsistemi, Consiglio Nazionale delle Ricerche, Strada VIII 5, Zona Industriale, I-95121 Catania (Italy); Ceppatelli, M. [ICCOM-CNR, Istituto di Chimica dei Composti OrganoMetallici, Via Madonna del Piano 10, I-50019 Sesto Fiorentino (Italy); LENS, European Laboratory for Non-Linear Spectroscopy, Via Nello Carrara 1, I-50019 Sesto Fiorentino (Italy); Gorelli, F.; Santoro, M. [LENS, European Laboratory for Non-Linear Spectroscopy, Via Nello Carrara 1, I-50019 Sesto Fiorentino (Italy); INO-CNR, Istituto Nazionale di Ottica, Via Nello Carrara 1, I-50019 Sesto Fiorentino (Italy); Miritello, M. [MATIS-IMM-CNR, via S. Sofia 64, I-95123 Catania (Italy); Bini, R. [LENS, European Laboratory for Non-Linear Spectroscopy, Via Nello Carrara 1, I-50019 Sesto Fiorentino (Italy); Università degli Studi di Firenze, Via della Lastruccia 3, I-50019 Sesto Fiorentino (Italy)

2015-08-14

The structural transformations occurring in Ge{sub 2}Sb{sub 2}Te{sub 5} films heated at temperature up to 400 °C, and under hydrostatic pressure up to 12 GPa, have been investigated through in-situ X ray diffraction measurements. The adopted experimental conditions are close to those experienced by the phase change material during the SET (crystallization)/RESET (amorphization) processes in a nonvolatile memory device. The compression enhances the thermal stability of the amorphous phase, which remains stable up to 180 °C at 8 GPa and to 230 °C at 12 GPa. The structure of the crystalline phases is also modified, with the formation of a CsCl-type structure instead of rock-salt and of a GeS-type structure at the temperature at which usually the trigonal stable phase is formed. Overall, the stability of the stable phase appears to be more affected by the compression. We argue that the presence of weak bonds associated to the van der Waals gaps is a determining factor for the observed reduced stability.

Crystal structure of Cs3H(SeO4)2 (T=295 K) and its changes in phase transformations

International Nuclear Information System (INIS)

Merinov, B.V.; Bolotina, N.B.; Baranov, A.I.; Shuvalov, L.A.

1988-01-01

Crystal structure of Cs 3 H(SeO 4 ) 2 3 phase at T=295 K is decoded by X-ray diffraction data. Monoclinic cell parameters are improved: a=10.903(3), b=6.390(8), c=8.452(2)A, β=112.46(1) deg, V=544 A 3 , Z=2, sp. gr. C2/m. Structural peculiarities of 3↔2↔1 phase transitions in Cs 3 H(SeO 4 ) 2 and proton conductivity mechanism in superionic phase are considered

Effects of Sb-doping on the formation of (K, Na)(Nb, Sb)O3 solid solution under hydrothermal conditions

International Nuclear Information System (INIS)

Su Likui; Zhu Kongjun; Bai Lin; Qiu Jinhao; Ji Hongli

2010-01-01

(K, Na)(Nb, Sb)O 3 (KNNS) lead-free peizoceramic powders were successfully synthesized by hydrothermal treatment at 240 o C for 8 h using the KOH, NaOH, Nb 2 O 5 and Sb 2 O 3 as raw materials. Effects of Sb-doping on the crystal structure and morphology of the as-prepared powders were investigated by powder X-ray diffraction (XRD), Raman spectra (Raman), scanning electron microscope (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). The Sb element was successfully doped into the alkaline niobate perovskite structure to form crystalline (K 0.7 Na 0.3 )(Nb 0.95 Sb 0.05 )O 3 lead-free piezoelectric ceramic powder, which has a hexagonal morphology due to the aggregation growth of small grains. Phase and morphology evolutions with the reaction time were also studied, and a possible formation mechanism was proposed.

Oyonite, Ag3Mn2Pb4Sb7As4S24, a New Member of the Lillianite Homologous Series from the Uchucchacua Base-Metal Deposit, Oyon District, Peru

Directory of Open Access Journals (Sweden)

Luca Bindi

2018-05-01

Full Text Available The new mineral species oyonite, ideally Ag3Mn2Pb4Sb7As4S24, has been discovered in the Uchucchacua base-metal deposit, Oyon district, Catajambo, Lima Department, Peru, as very rare black metallic subhedral to anhedral crystals, up to 100 μm in length, associated with orpiment, tennantite/tetrahedrite, menchettiite, and other unnamed minerals of the system Pb-Ag-Sb-Mn-As-S, in calcite matrix. Its Vickers hardness (VHN100 is 137 kg/mm2 (range 132–147. In reflected light, oyonite is weakly to moderately bireflectant and weakly pleochroic from dark grey to a dark green. Internal reflections are absent. Reflectance values for the four COM wavelengths [Rmin, Rmax (% (λ in nm] are: 33.9, 40.2 (471.1; 32.5, 38.9 (548.3, 31.6, 38.0 (586.6; and 29.8, 36.5 (652.3. Electron microprobe analysis gave (in wt %, average of 5 spot analyses: Cu 0.76 (2, Ag 8.39 (10, Mn 3.02 (7, Pb 24.70 (25, As 9.54 (12, Sb 28.87 (21, S 24.30 (18, total 99.58 (23. Based on 20 cations per formula unit, the chemical formula of oyonite is Cu0.38Ag2.48Mn1.75Pb3.79Sb7.55As4.05S24.12. The main diffraction lines are (d in Å, hkl and relative intensity: 3.34 (−312; 40, 3.29 (−520; 100, 2.920 (−132; 40, 2.821 (−232; 70, 2.045 (004; 50. The crystal structure study revealed oyonite to be monoclinic, space group P21/n, with unit-cell parameters a = 19.1806 (18, b = 12.7755 (14, c = 8.1789 (10 Å, β = 90.471 (11°, V = 2004.1 (4 Å3, Z = 2. The crystal structure was refined to a final R1 = 0.032 for 6272 independent reflections. Oyonite belongs to the Sb-rich members of the andorite homeotypic sub-series within the lillianite homologous series. The name oyonite is after the Oyon district, Lima Department, Peru, the district where the type locality (Uchucchacua mine is located.

Photoreduction of Carbon Dioxide to Methane Over Sb1.5Sn8.5-x Ti x O19.0 with High Conductivity.

Science.gov (United States)

Do, Jeong Yeon; Kwak, Byeong Sub; Kang, Misook

2018-09-01

In order to enhance the photoreduction of CO2 to CH4, a new type of photocatalyst, Sb1.5Sn8.5-xTixO19.0, with high conductivity and low bandgap was developed by partially incorporating Ti into the framework of Sb1.5Sn8.5O19.0 (antimony-doped tin oxide, ATO) using a controlled hydrothermal method. XRD and TEM analyses indicated that the Sb1.5Sn8.5-xTixO19.0 particles exhibited a tetragonal crystal structure and were approximately 20 nm in size. Furthermore, the bandgap and conductivity of these materials increased with increasing Ti content. A study of the photoreduction of CO2 with H2O revealed a remarkable increase in the generation of CH4 over the Sb1.5Sn8.5-xTixO19.0 catalysts. In particular, CH4 generation was the highest when Sb1.5Sn8.5Ti1.0O19.0 was used as the photocatalyst, and was three-fold higher than that achieved by using anatase TiO2. Photoluminescence studies showed that the enhanced photocatalytic activity of the Sb1.5Sn8.5-xTixO19.0 materials could be attributed to the interfacial transfer of photogenerated charges, which led to an effective charge separation and inhibition of the recombination of photogenerated electron-hole (e-/h+) pairs.

Effects of antimony trisulfide (Sb2S3) on sliding friction of automotive brake friction materials

Science.gov (United States)

Lee, Wan Kyu; Rhee, Tae Hee; Kim, Hyun Seong; Jang, Ho

2013-09-01

The effect of antimony trisulfide (Sb2S3) on the tribological properties of automotive brake friction materials was investigated using a Krauss type tribometer and a 1/5 scale dynamometer with a rigid caliper. Results showed that Sb2S3 improved fade resistance by developing transfer films on the disc surface at elevated temperatures. On the other hand, the rubbing surfaces of the friction material exhibited contact plateaus with a broader height distribution when it contained Sb2S3, indicating fewer contact junctions compared to the friction material with graphite. The friction material with Sb2S3 also exhibited a lower stick-slip propensity than the friction material with graphite. The improved fade resistance with Sb2S3 is attributed to its lubricating capability sustained at high temperatures, while the lower stick-slip propensity of the friction material with Sb2S3 is associated with the slight difference between its static and kinetic coefficients of friction and high normal stiffness.

Effect of tungsten on the phase-change properties of Ge8Sb2Te11 thin films for the phase-change device

Science.gov (United States)

Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

2017-07-01

In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge8Sb2Te11 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and W-doped Ge8Sb2Te11 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si ( p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the 0 - 400 ° C temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer's Law equation, the optical-energy band gap ( E op ), slope B 1/2, and slope 1/ F were calculated. For the crystalline materials, an increase in the slope B 1/2 and 1/ F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge8Sb2Te11 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature ( T c ). An increase in the T c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance ( R s ) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

Dual-Phase CsPbBr3 -CsPb2 Br5 Perovskite Thin Films via Vapor Deposition for High-Performance Rigid and Flexible Photodetectors.

Science.gov (United States)

Tong, Guoqing; Li, Huan; Li, Danting; Zhu, Zhifeng; Xu, Enze; Li, Guopeng; Yu, Linwei; Xu, Jun; Jiang, Yang

2018-02-01

Inorganic perovskites with special semiconducting properties and structures have attracted great attention and are regarded as next generation candidates for optoelectronic devices. Herein, using a physical vapor deposition process with a controlled excess of PbBr 2 , dual-phase all-inorganic perovskite composite CsPbBr 3 -CsPb 2 Br 5 thin films are prepared as light-harvesting layers and incorporated in a photodetector (PD). The PD has a high responsivity and detectivity of 0.375 A W -1 and 10 11 Jones, respectively, and a fast response time (from 10% to 90% of the maximum photocurrent) of ≈280 µs/640 µs. The device also shows an excellent stability in air for more than 65 d without encapsulation. Tetragonal CsPb 2 Br 5 provides satisfactory passivation to reduce the recombination of the charge carriers, and with its lower free energy, it enhances the stability of the inorganic perovskite devices. Remarkably, the same inorganic perovskite photodetector is also highly flexible and exhibits an exceptional bending performance (>1000 cycles). These results highlight the great potential of dual-phase inorganic perovskite films in the development of optoelectronic devices, especially for flexible device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermodynamic description of Tc(iv) solubility and carbonate complexation in alkaline NaHCO3-Na2CO3-NaCl systems.

Science.gov (United States)

Baumann, A; Yalçıntaş, E; Gaona, X; Polly, R; Dardenne, K; Prüßmann, T; Rothe, J; Altmaier, M; Geckeis, H

2018-03-28

The solubility of 99 Tc(iv) was investigated in dilute to concentrated carbonate solutions (0.01 M ≤ C tot ≤ 1.0 M, with C tot = [HCO 3 - ] + [CO 3 2- ]) under systematic variation of ionic strength (I = 0.3-5.0 M NaHCO 3 -Na 2 CO 3 -NaCl-NaOH) and pH m (-log[H + ] = 8.5-14.5). Strongly reducing conditions (pe + pH m ≈ 2) were set with Sn(ii). Carbonate enhances the solubility of Tc(iv) in alkaline conditions by up to 3.5 log 10 -units compared to carbonate-free systems. Solvent extraction and XANES confirmed that Tc was kept as +IV during the timeframe of the experiments (≤ 650 days). Solid phase characterization performed by XAFS, XRD, SEM-EDS, chemical analysis and TG-DTA confirmed that TcO 2 ·0.6H 2 O(am) controls the solubility of Tc(iv) under the conditions investigated. Slope analysis of the solubility data in combination with solid/aqueous phase characterization and DFT calculations indicate the predominance of the species Tc(OH) 3 CO 3 - at pH m ≤ 11 and C tot ≥ 0.01 M, for which thermodynamic and activity models are derived. Solubility data obtained above pH m ≈ 11 indicates the formation of previously unreported Tc(iv)-carbonate species, possibly Tc(OH) 4 CO 3 2- , although the likely formation of additional complexes prevents deriving a thermodynamic model valid for this pH m -region. This work provides the most comprehensive thermodynamic dataset available for the system Tc 4+ -Na + -Cl - -OH - -HCO 3 - -CO 3 2- -H 2 O(l) valid under a range of conditions relevant for nuclear waste disposal.

Optical characteristics of crystalline antimony sulphide (Sb 2 S 3 ...

African Journals Online (AJOL)

This paper presents the important optical characteristics of crystalline Sb2S3 film deposited on glass substrate using solution growth technique at 300k. These characteristics were analyzed using PYEUNICAM SP8-100 spectrophotometer in the range of UV-VIS-NIR while the morphology and the structural composition were ...

Crystallographic study of the intermediate compounds SbZn, Sb3Zn4 and Sb2Zn3

International Nuclear Information System (INIS)

Adjadj, Fouzia; Belbacha, El-djemai; Bouharkat, Malek; Kerboub, Abdellah

2006-01-01

The processes of development of semiconductor ceramics made up of bismuth, antimony and zinc often require during their preparation to know the nature of the involved phases. For that, it is always essential to refer to the diagrams of balance between phases of the binary systems or ternary. We presented in this work the study by X-rays diffraction relating to the intermediate compounds SbZn, Sb 3 Zn 4 and Sb 2 Zn 3 . The analysis by X-rays is often useful to give supplement the results of the other experimental methods

Origin, secret, and application of the ideal phase-change material GeSbTe

Energy Technology Data Exchange (ETDEWEB)

Yamada, Noboru [Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai, Seika-cho, Soraku-gun, 619-0237 Kyoto (Japan); Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 4, 1-1-1, Higashi, Tsukuba, Ibaraki 305-8562 (Japan)

2012-10-15

Discovery of the GeSbTe phase-change alloy in particular along the GeTe-Sb{sub 2}Te{sub 3} tie-line took place in the mid-1980s. The amorphous alloys showed ideal properties, for example, high thermal stability at r.t. and laser-induced rapid crystallization with large optical changes. Thereafter, GeSbTe was successively applied to various optical disks such as DVDs and BDs. Through DSC and XRD analyses, the appearance of the metastable phase having a NaCl-type structure was observed over a wide compositional region. This was the ''key'' to realizing the ideal phase-change properties. During this year, the role of the constituent elements of Ge and Sb became clear by RMC modeling using AXS data at SPring-8, where the ''nucleation dominant crystallization process'' was well explained. The aspect of the latest Blu-ray Disc (BD) product of Panasonic: GeSbTe phase-change films are utilized in every recording layer. It is seen that the front-side recording layers, L1 and L2, are highly transparent. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Bournonite PbCuSbS3 : Stereochemically Active Lone-Pair Electrons that Induce Low Thermal Conductivity.

Science.gov (United States)

Dong, Yongkwan; Khabibullin, Artem R; Wei, Kaya; Salvador, James R; Nolas, George S; Woods, Lilia M

2015-10-26

An understanding of the structural features and bonding of a particular material, and the properties these features impart on its physical characteristics, is essential in the search for new systems that are of technological interest. For several relevant applications, the design or discovery of low thermal conductivity materials is of great importance. We report on the synthesis, crystal structure, thermal conductivity, and electronic-structure calculations of one such material, PbCuSbS3 . Our analysis is presented in terms of a comparative study with Sb2 S3 , from which PbCuSbS3 can be derived through cation substitution. The measured low thermal conductivity of PbCuSbS3 is explained by the distortive environment of the Pb and Sb atoms from the stereochemically active lone-pair s(2) electrons and their pronounced repulsive interaction. Our investigation suggests a general approach for the design of materials for phase-change-memory, thermal-barrier, thermal-rectification and thermoelectric applications, as well as other functions for which low thermal conductivity is purposefully sought. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Geology, S-Pb isotopes, and 40Ar/39Ar geochronology of the Zhaxikang Sb-Pb-Zn-Ag deposit in Southern Tibet: implications for multiple mineralization events at Zhaxikang

Science.gov (United States)

Sun, Xiang; Zheng, Youye; Pirajno, Franco; McCuaig, T. Campbell; Yu, Miao; Xia, Shenlan; Song, Qingjie; Chang, Huifang

2018-03-01

Several Au, Sb, Sb-Au, Pb-Zn, and Sb-Pb-Zn-Ag deposits are present throughout the North Himalaya in southern Tibet, China. The largest Sb-Pb-Zn-Ag deposit is Zhaxikang (18 Mt at 0.6 wt% Sb, 2.0 wt% Pb, 3.5 wt% Zn, and 78 g/t Ag). Zhaxikang veins are hosted within N-S trending faults, which crosscut the Early-Middle Jurassic Ridang Formation consisting of shale interbedded with sandstone and limestone deposited on a passive continental margin. Ore paragenesis indicates that Zhaxikang mineralization occurred in two main phases composed of six total stages. The initial phase was characterized by assemblages of fine-grained Mn-Fe carbonate + arsenopyrite + pyrite + sphalerite (stage 1), followed by relatively coarse-grained Mn-Fe carbonate + Fe-rich sphalerite + galena + pyrite (stage 2). The second phase was marked by assemblages of quartz + pyrite + Fe-poor sphalerite and Ag-rich galena + tetrahedrite + sericite (stage 3), quartz + Sb-Pb sulfosalt minerals mainly composed of boulangerite and jamesonite (stage 4), quartz + stibnite ± cinnabar (stage 5), and quartz ± calcite (stage 6). Sulfides of stage 2 have δ34SV-CDT of 8.4-12.0‰, 206Pb/204Pb ratios of 19.648 to 19.659, 207Pb/204Pb ratios of 15.788 to 15.812, and 208Pb/204Pb ratios of 40.035 to 40.153. Sulfides of stage 3 have similar δ34SV-CDT of 6.1-11.2‰ and relatively more radiogenic lead isotopes (206Pb/204Pb = 19.683-19.792). Stage 4 Sb-Pb sulfosalt minerals have δ34SV-CDT of 5.0-7.2‰ and even more radiogenic lead (206Pb/204Pb = 19.811-19.981). By contrast, stibnite of stage 5 has δ34SV-CDT of 4.5-7.8‰ and less radiogenic lead (206Pb/204Pb = 18.880-18.974). Taken together with the geological observations that the Pb-Zn-bearing Mn-Fe carbonate veins were crosscut by various types of quartz veins, sphalerite and galena of stage 2 underwent dissolution and remobilization, and that Sb-Pb(-Fe) sulfosalts formed at the expense of Pb from stage 2 galena and of Fe from stage 2 sphalerite, we argue that

Crystal and magnetic study of the disordered perovskites Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} and Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Retuerto, M., E-mail: mretuerto@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Martinez-Lope, M.J.; Garcia-Hernandez, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Munoz, A. [Departamento de Fisica Aplicada, EPS, Universidad Carlos III, Avda. Universidad 30, E-28911 Leganes-Madrid (Spain); Fernandez-Diaz, M.T. [Institut Max Von Laue Paul Langevin, F-38042 Grenoble (France); Alonso, J.A. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)

2010-10-15

We have investigated the double perovskites Ca{sub 2}MSbO{sub 6} (M = Mn, Fe) that have been prepared by solid-state reaction (M = Fe) and wet chemistry procedures (M = Mn). The crystal and magnetic structures have been studied from X-ray (XRD) and neutron powder diffraction (NPD) data. Rietveld refinements show that the crystal structures are orthorhombic (space group Pbnm) with complete disorder of M and Sb cations, so the formula should be rewritten as Ca(M{sub 0.5}Sb{sub 0.5})O{sub 3}. Due to this disorder no evidences of Jahn-Teller distortion can be observed in the MnO{sub 6} octahedra of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3}, in contrast with the ordered double perovskite Sr{sub 2}MnSbO{sub 6}. Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3} behaves as an antiferromagnet with an ordered magnetic moment for Fe{sup 3+} of 1.53(4){mu}{sub B} and a propagation vector k = 0, as investigated by low-temperature NPD. The antiferromagnetic ordering is a result of the high degree of Fe/Sb anti-site disorder of the sample, which originates the spontaneous formation of Fe-rich islands, characterized by the presence of strong Fe-O-Fe antiferromagnetic couplings with enough long-range coherence to produce a magnetic contribution perceptible by NPD. By contrast, the magnetic structure of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} cannot be observed by low-temperature NPD because the magnitude of the ordered magnetic moments is below the detection threshold for neutrons.

Evaluation the anaerobic digestion performance of solid residual kitchen waste by NaHCO3 buffering

International Nuclear Information System (INIS)

Gao, Shumei; Huang, Yue; Yang, Lili; Wang, Hao; Zhao, Mingxing; Xu, Zhiyang; Huang, Zhenxing; Ruan, Wenquan

2015-01-01

Highlights: • The maximum methane production of SRKW was 479 mL/gTS added . • Anaerobic digestion capacity increased by 33.3% through NaHCO 3 buffering. • Protease activity was mainly affected by high organic load. - Abstract: Anaerobic digestion has been considered as a promising energy-producing process for kitchen waste treatment. In this paper, the anaerobic digestion (AD) performances of solid residual kitchen waste (SRKW) with or without NaHCO 3 buffering were investigated. The results indicated that the methane production reached the maximum of 479 mL/gTS added at the inoculum to substrate ratio (ISR, based on VS) of 1:1.4 without buffering, accompanied by VS removal rate of 78.91%. Moreover, the anaerobic digestion capacity increased by 33.3% through NaHCO 3 buffering, and the methane yield at ISR 1:2.8 was improved by 48.5% with NaHCO 3 addition. However, the methanogenesis with or without NaHCO 3 buffer was suppressed at ISR 1:3.5, indicated from the lowest methane yield of 55.50 mL/gTS added and high volatile fatty acids concentration of more than 14,000 mg/L. Furthermore, proteins in SRKW were not degraded completely at excessive organic loading, since the concentrations of ammonia nitrogen in ISR 1:3.5 groups with (2738 mg/L) and without NaHCO 3 buffering (2654 mg/L) were lower than the theoretical value of 3500 mg/L and the protease activities in ISR 1:3.5 groups were also inhibited

Photodetachment of Isolated Bicarbonate Anion: Electron Binding Energy of HCO3-

Energy Technology Data Exchange (ETDEWEB)

Wang, Xue B.; Xantheas, Sotiris S.

2011-04-29

We report the first direct photodetachment photoelectron spectroscopy of HCO3 in the gas phase under low temperature conditions. The observed photoelectron spectra are complicated due to excitations of manifolds in both vibrational and electronic states. A long and single vibrational progression with a frequency of 530 ± 20 cm-1 is partially resolved in the threshold of the T=20 K, 266 nm spectrum. The adiabatic electron detachment energy (ADE) of HCO3, or in other words the electron affinity (EA) of neutral HCO3, is experimentally determined from the (0-0) transition to be 3.680 ± 0.015 eV. High-level ab initio calculations at the CCSD(T) level of theory produce an anharmonic frequency of 546 cm-1 for HCO3 and a value of 3.62 eV for the (0,0) transition, both in excellent agreement with the experimentally determined values.

Structural and physical properties of Mg3-xZnxSb2 (x=0-1.34)

International Nuclear Information System (INIS)

Ahmadpour, Faraz; Kolodiazhnyi, Taras; Mozharivskyj, Yurij

2007-01-01

The Mg 3-x Zn x Sb 2 phases with x=0-1.34 were prepared by direct reactions of the elements in tantalum tubes. According to the X-ray single crystal and powder diffraction, the Mg 3-x Zn x Sb 2 phases crystallize in the same P3-bar m1 space group as the parent Mg 3 Sb 2 phase. The Mg 3-x Zn x Sb 2 structure is different from the other substituted structures of Mg 3 Sb 2 , such as (Ca, Sr, Ba) Mg 2 Sb 2 or Mg 5.23 Sm 0.77 Sb 4 , in a way that in Mg 3-x Zn x Sb 2 the Mg atoms on the tetrahedral sites are replaced, while in the other structures Mg on the octahedral sites is replaced. Thermoelectric performance for the two members of the series, Mg 3 Sb 2 and Mg 2.36 Zn 0.64 Sb 2 , was evaluated from low to room temperatures through resistivity, Seebeck coefficient and thermal conductivity measurements. In contrast to Mg 3 Sb 2 which is a semiconductor, Mg 2.36 Zn 0.64 Sb 2 is metallic and exhibits an 18-times larger dimensionless figure-of-merit, ZT, at room temperature. However, thermoelectric performance of Mg 2.36 Zn 0.64 Sb 2 is still poor and it is mostly due to its large electrical resistivity. - Graphical abstract: The Mg atoms in Mg 3 Sb 2 were successfully substituted with Zn, with Zn going exclusively into the tetrahedral sites. Zn substitution increases the electrical conductivity in Mg 2.36 Zn 0.64 Sb 2 by closing the band gap. This change combined with a decrease in the thermal conductivity improves the ZT value

Reversible light-mediated compositional and structural transitions between CsPbBr3 and CsPb2Br5 nanosheets.

Science.gov (United States)

Shen, Wei; Ruan, Longfei; Shen, Zhitao; Deng, Zhengtao

2018-03-13

This communication describes a new method to achieve reversible light-induced chemical composition and phase structural transitions from polyvinylpyrrolidone-capped orthorhombic CsPbBr 3 to tetragonal CsPb 2 Br 5 nanosheets or vice versa. This work will deepen our understanding of the controlled synthesis, post-processing, and decomposition pathway of cesium lead halide perovskite nanocrystals.

Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te) x -(Bi0.5Sb1.5Te3)1-x (x=0-1.0) alloys prepared by spark plasma sintering

International Nuclear Information System (INIS)

Cui, J.L.; Xue, H.F.; Xiu, W.J.; Jiang, L.; Ying, P.Z.

2006-01-01

In this paper, pseudo-binary (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys were prepared using spark plasma sintering technique, and the composition-dependent thermoelectric properties were evaluated. Electrical conductivities range from 7.9x10 4 to 15.6x10 4 Ω -1 m -1 at temperatures of 507 and 318 K, respectively, being about 3.0 and 8.5 times those of Bi 0.5 Sb 1.5 Te 3 alloy at the corresponding temperatures. The optimal dimensionless figure of merit (ZT) of the sample with molar fraction x=0.025 reaches 1.1 at 478 K, whereas that of the ternary Bi 0.5 Sb 1.5 Te 3 alloy is 0.58 near room temperature. The results also reveal that a direct introduction of Ag 0.365 Sb 0.558 Te in the Bi-Sb-Te system is much more effective to the property improvement than naturally precipitated Ag 0.365 Sb 0.558 Te in the Ag-doped Ag-Bi-Sb-Te system. - Graphical abstract: The temperature dependence of the dimensionless thermoelectric figure of merit ZT for different (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys prepared by spark plasma sintering

Cu and Zn substituted silicon clathrates with the cubic type-II structure. Synthesis and characterization of Cs{sub 8}Na{sub 16}Cu{sub 3.8}Si{sub 132.2} and Cs{sub 8}Na{sub 16}Zn{sub 6.9}Si{sub 129.1}

Energy Technology Data Exchange (ETDEWEB)

Schaefer, Marion C.; Bobev, Svilen [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE (United States)

2017-12-13

Studies in the systems Cs-Na-Cu-Si and Cs-Na-Zn-Si yielded the novel clathrates Cs{sub 8}Na{sub 16}(Cu,Si){sub 136} and Cs{sub 8}Na{sub 16}(Zn,Si){sub 136}, both with the cubic type-II structure [space group Fd anti 3m (no. 227), Pearson symbol cF160]. The structures of the title compounds were established from single-crystal X-ray diffraction methods, confirming the complete ordering of the Cs and Na guest atoms. The framework-building Si atoms are found to be randomly substituted by Cu atoms on framework site 96g, exclusively. In the structure of Cs{sub 8}Na{sub 16}(Zn,Si){sub 136}, the refinements indicate that the Zn and Si atoms co-occupy two of the three framework sites with notable preference for site 96g over site 32e. The corresponding refined compositions and unit cell parameters are as follows: Cs{sub 8}Na{sub 16}Cu{sub 3.8}Si{sub 132.2(1)} [a = 14.7583(15) Aa]; Cs{sub 8}Na{sub 16}Zn{sub 6.9}Si{sub 129.1(1)} [a = 14.7682(5) Aa], respectively. The type-II clathrates can be obtained only from experiments employing both Na and Cs, whereas work in the ternary Cs-Cu-Si, Cs-Zn-Si, Na-Cu-Si, and Na-Zn-Si systems failed to yield any clathrate phases. At the same conditions, exploratory studies in the K-Zn-Si and Rb-Zn-Si systems provided evidence that type-I clathrates are favored. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Amorphous-to-crystalline transition in Ge{sub 8}Sb{sub (2-x)}Bi{sub x}Te{sub 11} phase-change materials for data recording

Energy Technology Data Exchange (ETDEWEB)

Svoboda, Roman, E-mail: roman.svoboda@upce.cz [Department of Physical Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Karabyn, Vasyl [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Málek, Jiří [Department of Physical Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Frumar, Miloslav [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Beneš, Ludvík; Vlček, Milan [Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry of the Academy of Sciences of the Czech Republic v.v.i. and the University of Pardubice 532 10 Pardubice (Czech Republic)

2016-07-25

Structural and thermokinetic analyses were used to study the crystallization behavior of Ge{sub 8}Sb{sub (2-x)}Bi{sub x}Te{sub 11}thin films, promising materials for phase-change memory recording applications. By exploring the full compositional range, it was found that the Sb→Bi substitution leads to a decrease of crystallization enthalpy and activation energy of the main crystallization phase-change process. These trends were explained in terms of the changing structural ordering within the recently proposed new phase-change atomic switching mechanism. All of the compositions exhibited very similar transformation kinetics, confirming the uniformity of the phase-change mechanisms involved. It was further shown that rapid energy delivery achieved during heating, in the case of all investigated materials, leads to a transition from the classical nucleation/growth-based formation of 3D crystallites towards an autocatalytic phase-change process with an enormously increased speed of crystallization. Rapidity of the crystallization process was quantified for all of the studied compositions based on a novel Index of Crystallization Rapidity criterion – the results provided by this criterion showed that the highest crystallization speed was produced by the Ge{sub 8}Sb{sub 0.8}Bi{sub 1.2}Te{sub 11} composition, which therefore from this point of view appears to be a suitable candidate for the new generation of phase-change memory recording devices. - Highlights: • Crystallization behavior of Ge{sub 8}Sb{sub (2-x)}Bi{sub x}Te{sub 11} thin films was studied by DSC. • Sb → Bi substitution leads to a decrease of crystallization enthalpy and activation energy. • All compositions exhibited very similar transformation kinetics. • Rapidity of the crystallization process was quantified for the studied compositions. • Highest crystallization speed was produced by the Ge{sub 8}Sb{sub 0.8}Bi{sub 1.2}Te{sub 11} composition.

Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge2Sb2Te5 and AgInSbTe

International Nuclear Information System (INIS)

Lee, Bong-Sub; Bogle, Stephanie N.; Darmawikarta, Kristof; Abelson, John R.; Shelby, Robert M.; Retter, Charles T.; Burr, Geoffrey W.; Raoux, Simone; Bishop, Stephen G.

2014-01-01

Phase change memory devices are based on the rapid and reversible amorphous-to-crystalline transformations of phase change materials, such as Ge 2 Sb 2 Te 5 and AgInSbTe. Since the maximum switching speed of these devices is typically limited by crystallization speed, understanding the crystallization process is of crucial importance. While Ge 2 Sb 2 Te 5 and AgInSbTe show very different crystallization mechanisms from their melt-quenched states, the nanostructural origin of this difference has not been clearly demonstrated. Here, we show that an amorphous state includes different sizes and number of nanoscale nuclei, after thermal treatment such as melt-quenching or furnace annealing is performed. We employ fluctuation transmission electron microscopy to detect nanoscale nuclei embedded in amorphous materials, and use a pump-probe laser technique and atomic force microscopy to study the kinetics of nucleation and growth. We confirm that melt-quenched amorphous Ge 2 Sb 2 Te 5 includes considerably larger and more quenched-in nuclei than its as-deposited state, while melt-quenched AgInSbTe does not, and explain this contrast by the different ratio between quenching time and nucleation time in these materials. In addition to providing insights to the crystallization process in these technologically important devices, this study presents experimental illustrations of temperature-dependence of nucleation rate and growth speed, which was predicted by theory of phase transformation but rarely demonstrated

Preparation of porous three-dimensional quaternary thioantimonates(III) ACuSb{sub 2}S{sub 4} (A=Rb, Cs) through a surfactant-thermal method

Energy Technology Data Exchange (ETDEWEB)

Shen, Yaying; Liu, Chang; Hou, Peipei; Zhi, Mingjia; Zhou, Chunmei; Liu, Yi [Zhejiang Univ., Hangzhou (China). State Key Lab. of Silicon Materials; Chai, Wenxiang [China Jiliang Univ., Hangzhou (China). College of Materials Science and Engineering; Cheng, Jian-Wen [Zhejiang Normal Univ., Jinhua (China). Inst. of Physical Chemistry; Zhang, Quichun [Nanyang Technological Univ., Singapore (Singapore). School of Materials Science and Engineering; Nanyang Technological Univ., Singapore (Singapore). Div. of Chemistry and Biological Chemistry

2015-12-15

Two novel porous three-dimensional quaternary thioantimonates(III) ACuSb{sub 2}S{sub 4} (A=Rb, Cs) were successfully synthesized by employing the neutral surfactant PEG-400 (PEG=polyethyleneglycol) as reaction media, these are significantly different from the known quaternary A-Cu-Sb-S thioantimonates(III) with two-dimensional (2D) crystal structures. This is the first time that crystalline quaternary chalcogenides have been prepared in surfactant media. Both experimental and theoretical studies confirm they are semiconductors with narrow band gaps. Our results demonstrated that the surfactant-thermal strategy could offer a new opportunity to explore novel chalcogenides with diverse crystal structures and interesting physicochemical properties.

Ciriottiite, Cu(Cu,Ag3Pb19(Sb,As22(As2S56, the Cu-Analogue of Sterryite from the Tavagnasco Mining District, Piedmont, Italy

Directory of Open Access Journals (Sweden)

Luca Bindi

2016-02-01

Full Text Available The new mineral species ciriottiite, ideally Cu(Cu,Ag3Pb19(Sb,As22(As2S56 has been discovered in the Tavagnasco mining district, Piedmont, Italy, as very rare black metallic tubular crystals, up to 150 μm in length, associated with Bi sulfosalts and arsenopyrite. Its Vickers hardness (VHN10 is 203 kg/mm2 (range 190–219. In reflected light, ciriottiite is light grey in color, distinctly anisotropic with brownish to greenish rotation tints. Internal reflections are absent. Reflectance values for the four COM wavelengths (Rmin, Rmax (% (λ in nm are: 33.2, 37.8 (471.1; 31.8, 35.3 (548.3, 31.0, 34.7 (586.6; and 27.9, 32.5 (652.3. Electron microprobe analysis gave (in wt %, average of 5 spot analyses: Cu 2.33 (8, Ag 0.53 (5, Hg 0.98 (6, Tl 0.78 (3, Pb 44.06 (14, As 4.66 (7, Sb 23.90 (10, Bi 1.75 (7, total 99.38 (26. On the basis of 56 S atoms per formula unit, the chemical formula of ciriottiite is Cu3.23(11Ag0.43(4Hg0.43(2Pb18.74(9Tl0.34(1Sb17.30(5As5.48(10Bi0.74(3S56. The main diffraction lines, corresponding to multiple hkl indices, are (d in Å (relative visual intensity: 4.09 (m, 3.91 (m, 3.63 (vs, 3.57 (m, 3.22 (m, 2.80 (mw, 2.07 (s. The crystal structure study revealed ciriottiite to be monoclinic, space group P21/n, with unit-cell parameters a = 8.178 (2, b = 28.223 (6, c = 42.452 (5 Å, β = 93.55 (2°, V = 9779.5 (5 Å3, Z = 4. The crystal structure was refined to a final R1 = 0.118 for 21304 observed reflections. Ciriottiite is the Cu analogue of sterryite and can be described as an expanded derivative of owyheeite. The name ciriottiite honors Marco Ernesto Ciriotti (b. 1945 for his longstanding contribution to mineral systematics.

Electric Field-Induced Large Strain in Ni/Sb-co Doped (Bi0.5Na0.5) TiO3-Based Lead-Free Ceramics

Science.gov (United States)

Li, Liangliang; Hao, Jigong; Xu, Zhijun; Li, Wei; Chu, Ruiqing

2018-02-01

Lead-free piezoelectric ceramics (Bi0.5Na0.5)0.935Ba0.065Ti1- x (Ni0.5Sb0.5) x O3 (BNBT6.5- xNS) have been fabricated using conventional solid sintering technique. The effect of (Ni, Sb) doping on the phase structure and electrical properties of BNBT6.5 ceramics were systematically investigated. Results show that the addition of (Ni, Sb) destroyed the ferroelectric long-range order of BNBT6.5 and shifted the ferroelectric-relaxor transition temperature ( T F-R) down to room temperature. Thus, this process induced an ergodic relaxor phase at zero field in samples with x = 0.005. Under the electric field, the ergodic relaxor phase could reversibly transform to ferroelectric phase, which promotes the strain response with peak value of 0.38% (at 80 kV/cm, corresponding to d 33 * = 479 pm/V) at x = 0.005. Temperature-dependent measurements of both polarization and strain confirmed that the large strain originated from a reversible field-induced ergodic relaxor to ferroelectric phase transformation. The proposed material exhibits potential for nonlinear actuators.

The pentasulfates A{sub 2}[S{sub 5}O{sub 16}] (A = Li, Na, Cs, Ag). Rare species by reactions in SO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Schindler, Lisa Verena; Struckmann, Mona; Becker, Anna; Wickleder, Mathias S. [Institute of Inorganic and Analytical Chemistry, Justus Liebig University of Giessen (Germany)

2017-02-03

The reaction of various sulfate salts A{sub 2}SO{sub 4} (A = Li, Na, Ag, Cs) with neat SO{sub 3} led to the respective pentasulfates A{sub 2}[S{sub 5}O{sub 16}] {Li_2[S_5O_1_6]: monoclinic, C2/c, Z = 4, a = 1850.71(7) pm, b = 665.45(2) pm, c = 992.80(4) pm, β = 106.764(2) , V = 1170.72(7) x 10"6 pm"3; Na_2[S_5O_1_6]: orthorhombic, Pbcn, Z = 4, a = 880.17(3) pm, b = 1039.88(4) pm, c = 1348.58(5) pm, V = 1234.32(8) x 10"6 pm"3; Ag_2[S_5O_1_6]: orthorhombic, Pbcn, Z = 4, a = 884.34(4) pm, b = 1043.19(5) pm, c = 1381.83(7) pm, V = 1274.8(1) x 10"6 pm"3; Cs_2[S_5O_1_6]: monoclinic, P2_1, Z = 4, a = 892.96(3) pm, b = 859.72(3) pm, c = 978.30(4) pm, β = 101.443(2) , V = 736.11(5) x 10"6 pm"3}. All four compounds are colorless and extremely moisture-sensitive substances. They all contain the pentasulfate anion [S{sub 5}O{sub 16}]{sup 2-} that has, until now, only been reported once. This comparative study of polysulfate salts with the same polysulfate anion, but varying countercations, is a crucial step in comprehending this very basic and, nevertheless, poorly investigated class of materials. Raman spectroscopy and powder diffraction complete the structural investigations. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The crystal structure of ramdohrite Pb_5.9Fe_0.1Mn_0.1In_0.1Cd_0.2Ag_2.8Sb_10.8S₂₄

DEFF Research Database (Denmark)

Makovicky, Emil; Mumme, William G.; Gable, Robert W.

2013-01-01

The crystal structure of ramdohrite, Pb5.9Fe0.1Mn0.1In0.1Cd0.2Ag2.8Sb10.8S24, from the Chocaya mine, Potosí, Bolivia, determined by Makovicky and Mumme from film data in 1983, was refined from single-crystal diffractometer data to the R value 0.060, based on 5230 reflections [I > 2σ(I)] from...... a twinned crystal. Lattice parameters are a = 8.7348(3), b = 13.0543(4), c = 19.3117(6) Å, and β = 90.179(2)°, space group P21/n. Two bicapped trigonal prismatic sites of lead bridge and unite adjacent (311)PbS slabs. These slabs contain five distinct coordination pyramids of Sb with trapezoidal cross...... sections, a mixed and disordered Sb-Ag-Cd-(Pb) site, refined as 0.39 Sb + 0.61 Ag, a pure Ag site with a very open, irregular tetrahedral coordination, and an octahedral site occupied by Pb. The (311)PbS slabs contain large lone electron pair micelles formed by four distinct antimony sites in alternation...

Sorghum phytochrome B inhibits flowering in long days by activating expression of SbPRR37 and SbGHD7, repressors of SbEHD1, SbCN8 and SbCN12.

Directory of Open Access Journals (Sweden)

Shanshan Yang

Full Text Available Light signaling by phytochrome B in long days inhibits flowering in sorghum by increasing expression of the long day floral repressors PSEUDORESPONSE REGULATOR PROTEIN (SbPRR37, Ma1 and GRAIN NUMBER, PLANT HEIGHT AND HEADING DATE 7 (SbGHD7, Ma6. SbPRR37 and SbGHD7 RNA abundance peaks in the morning and in the evening of long days through coordinate regulation by light and output from the circadian clock. 58 M, a phytochrome B deficient (phyB-1, ma3R genotype, flowered ∼60 days earlier than 100 M (PHYB, Ma3 in long days and ∼11 days earlier in short days. Populations derived from 58 M (Ma1, ma3R, Ma5, ma6 and R.07007 (Ma1, Ma3, ma5, Ma6 varied in flowering time due to QTL aligned to PHYB/phyB-1 (Ma3, Ma5, and GHD7/ghd7-1 (Ma6. PHYC was proposed as a candidate gene for Ma5 based on alignment and allelic variation. PHYB and Ma5 (PHYC were epistatic to Ma1 and Ma6 and progeny recessive for either gene flowered early in long days. Light signaling mediated by PhyB was required for high expression of the floral repressors SbPRR37 and SbGHD7 during the evening of long days. In 100 M (PHYB the floral activators SbEHD1, SbCN8 and SbCN12 were repressed in long days and de-repressed in short days. In 58 M (phyB-1 these genes were highly expressed in long and short days. Furthermore, SbCN15, the ortholog of rice Hd3a (FT, is expressed at low levels in 100 M but at high levels in 58 M (phyB-1 regardless of day length, indicating that PhyB regulation of SbCN15 expression may modify flowering time in a photoperiod-insensitive manner.

Ingestion of Sodium Bicarbonate (NaHCO3) Following a Fatiguing Bout of Exercise Accelerates Postexercise Acid-Base Balance Recovery and Improves Subsequent High-Intensity Cycling Time to Exhaustion.

Science.gov (United States)

Gough, Lewis A; Rimmer, Steven; Osler, Callum J; Higgins, Matthew F

2017-10-01

This study evaluated the ingestion of sodium bicarbonate (NaHCO 3 ) on postexercise acid-base balance recovery kinetics and subsequent high-intensity cycling time to exhaustion. In a counterbalanced, crossover design, nine healthy and active males (age: 23 ± 2 years, height: 179 ± 5 cm, body mass: 74 ± 9 kg, peak mean minute power (W peak ) 256 ± 45 W, peak oxygen uptake (V̇O 2peak ) 46 ± 8 ml.kg -1 .min -1 ) performed a graded incremental exercise test, two familiarization and two experimental trials. Experimental trials consisted of cycling to volitional exhaustion (T LIM1 ) at 100% W PEAK on two occasions (T LIM1 and T LIM2 ) interspersed by a 90 min passive recovery period. Using a double-blind approach, 30 min into a 90 min recovery period participants ingested either 0.3 g.kg -1 body mass sodium bicarbonate (NaHCO 3 ) or a placebo (PLA) containing 0.1 g.kg -1 body mass sodium chloride (NaCl) mixed with 4 ml.kg -1 tap water and 1 ml.kg -1 orange squash. The mean differences between T LIM2 and T LIM1 was larger for PLA compared with NaHCO 3 (-53 ± 53 vs. -20 ± 48 s; p = .008, d = 0.7, CI =-0.3, 1.6), indicating superior subsequent exercise time to exhaustion following NaHCO 3 . Blood lactate [Bla - ] was similar between treatments post T LIM1 , but greater for NaHCO 3 post T LIM2 and 5 min post T LIM2 . Ingestion of NaHCO 3 induced marked increases (p < .01) in both blood pH (+0.07 ± 0.02, d = 2.6, CI = 1.2, 3.7) and bicarbonate ion concentration [HCO 3 - ] (+6.8 ± 1.6 mmo.l -1 , d = 3.4, CI = 1.8, 4.7) compared with the PLA treatment, before T LIM2 . It is likely both the acceleration of recovery, and the marked increases of acid-base after T LIM1 contributed to greater T LIM2 performance compared with the PLA condition.

Enhanced photovoltaic performance of Sb2S3-sensitized solar cells through surface treatments

Science.gov (United States)

Ye, Qing; Xu, Yafeng; Chen, Wenyong; Yang, Shangfeng; Zhu, Jun; Weng, Jian

2018-05-01

Efficient antimony sulfide (Sb2S3)-sensitized solar cells were obtained by a sequential treatment with thioacetamide (TA) and 1-decylphosphonic acid (DPA). Compared with the untreated Sb2S3-sensitized solar cells, the power conversion efficiency of the treated Sb2S3 solar cells was improved by 1.80% to 3.23%. The TA treatment improved the Sb2S3 films by reducing impurities and decreasing the film's surface defects, which inhibited the emergence of recombination centers. The DPA treatment reduced the recombination between hole transport materials (HTMs) and the Sb2S3. Therefore, we have presented an efficient strategy to improve the performance of Sb2S3-sensitized solar cells.

Structure and decomposition of the silver formate Ag(HCO2)

International Nuclear Information System (INIS)

Puzan, Anna N.; Baumer, Vyacheslav N.; Mateychenko, Pavel V.

2017-01-01

Crystal structure of the silver formate Ag(HCO 2 ) has been determined (orthorhombic, sp.gr. Pccn, a=7.1199(5), b=10.3737(4), c=6.4701(3)Å, V=477.88(4) Å 3 , Z=8). The structure contains isolated formate ions and the pairs Ag 2 2+ which form the layers in (001) planes (the shortest Ag–Ag distances is 2.919 in the pair and 3.421 and 3.716 Å between the nearest Ag atoms of adjacent pairs). Silver formate is unstable compound which decompose spontaneously vs time. Decomposition was studied using Rietveld analysis of the powder diffraction patterns. It was concluded that the diffusion of Ag atoms leads to the formation of plate-like metal particles as nuclei in the (100) planes which settle parallel to (001) planes of the silver formate matrix. - Highlights: • Silver formate Ag(HCO 2 ) was synthesized and characterized. • Layered packing of Ag-Ag pairs in the structure was found. • Decomposition of Ag(HCO 2 ) and formation of metal phase were studied. • Rietveld-refined micro-structural characteristics during decomposition reveal the space relationship between the matrix structure and forming Ag phase REPLACE with: Space relationship between the matrix structure and forming Ag phase.

Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory

Energy Technology Data Exchange (ETDEWEB)

Chen, Shiyu; Wu, Weihua [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)

2017-04-15

Highlights: • Sb{sub 7}Te{sub 3} (ST) provides a fast crystallization speed, low melting temperature. • The Sb{sub 7}Te{sub 3}/ZnSb films exhibits faster crystallization speed, high thermal stability. • The calculated temperature for 10-year data retention is about 127 {sup o}C. • The Sb{sub 7}Te{sub 3}/ZnSb multilayer configuration with low power consumption. - Abstract: Phase-change memory is regard as one of the most promising candidates for the next-generation non-volatile memory. In this work, we proposed a Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films to improve the thermal stability of Sb-rich Sb{sub 3}Te{sub 7}. The sheet resistance ratio between amorphous and crystalline states reached up to 4 orders of magnitude. With regard to the thermal stability, the calculated temperature for 10-year data retention is about 127 °C. The threshold current and threshold voltage of a cell based on Sb{sub 7}Te{sub 3}/ZnSb are 6.9 μA and 1.9 V, respectively. The lower RESET power is presented in the PCM cells of Sb{sub 7}Te{sub 3}/ZnSb films, benefiting from its high resistivity.

Phase transformations behavior in a Cu-8.0Ni-1.8Si alloy

Energy Technology Data Exchange (ETDEWEB)

Lei, Q. [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Li, Z., E-mail: lizhou6931@163.com [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China) and Key Laboratory of Nonferrous Metal Materials Science and Engineering, Ministry of Education, Changsha, 410083 (China); Wang, M.P. [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Key Laboratory of Nonferrous Metal Materials Science and Engineering, Ministry of Education, Changsha, 410083 (China); Zhang, L.; Gong, S. [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Xiao, Z. [Department of Engineering, University of Liverpool, Liverpool, L693 GH (United Kingdom); Pan, Z.Y. [Hunan Nonferrous Metals Holding Group Co., Ltd., Changsha, 410015 (China)

2011-02-24

Research highlights: > High solute concentrations Cu-Ni-Si alloy with super high strength and high conductivity has a good prospect for replacing Cu-Be alloys. At least four different kinds of precipitation products (DO{sub 22} ordered structure, {beta}-Ni{sub 3}Si precipitate, {delta}-Ni{sub 2}Si precipitate and {gamma}-Ni{sub 5}Si{sub 2} precipitate) have been observed in previous investigation. Therefore, the overall phase transformation behavior of Cu-Ni-Si alloy appears to be very complex. And most previous studies on the phase transformation usually investigated the precipitation process at only one temperature or at most a few temperatures, which is far away to establish a time-temperature-transformation (TTT) diagram for Cu-Ni-Si alloy. > The phase transformation behavior of Cu-8.0Ni-1.8Si alloy has been studied systematically at wide temperature range in this paper. The results we have gained are that: after solution treatment, followed by different conditions of isothermal treatment, DO{sub 22} ordering, discontinuous precipitation and continuous precipitation were observed in the alloy; discontinuous precipitates of {beta}-Ni{sub 3}Si phase appeared when the alloy isothermal treated at 550 deg. C for short time, which had not been reported by the previous Cu-Ni-Si system alloy's researchers in their papers; two kinds of precipitates of {beta}-Ni{sub 3}Si and {delta}-Ni{sub 2}Si were determined by the TEM characterization; the orientation relationship between the two kinds of precipitates and Cu-matrix is that: (1 1 0){sub Cu}//(1 1 0){sub {beta}}//(211-bar){sub {delta}}, [112-bar]{sub Cu}//[11-bar 2]{sub {beta}}//[3 2 4]{sub {delta}}; during overaging treatment, Cu-matrix, {beta}-Ni{sub 3}Si, {delta}-Ni{sub 2}Si and {delta}'-Ni{sub 2}Si were distinguished in the samples and the orientation relationship between the precipitates and Cu-matrix can be expressed as that: (0 2 2){sub Cu}//(0 2 2){sub {beta}}//(1 0 0){sub {delta}}, (02-bar 2){sub Cu

Tunable surface wettability and water adhesion of Sb2S3 micro-/nanorod films

International Nuclear Information System (INIS)

Zhong, Xin; Zhao, Huiping; Yang, Hao; Liu, Yunling; Yan, Guoping; Chen, Rong

2014-01-01

Antimony sulfide (Sb 2 S 3 ) films were successfully prepared by spin coating Sb 2 S 3 micro-/nanorods with different sizes on glass slides, which was synthesized via a facile and rapid microwave irradiation method. The prepared Sb 2 S 3 micro-/nanorods and films were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and water contact angle (CA). The as-prepared Sb 2 S 3 films exhibited different surface wettabilities ranging from superhydrophilicity to superhydrophobicity, which was strongly dependent on the diameter of Sb 2 S 3 micro-/nanorod. Sb 2 S 3 film made by nanorods possessed superhydrophobic surface and high water adhesive property. After surface modification with stearic acid, the superhydrophobic surface exhibited an excellent self-cleaning property owing to its low adhesive force. The clarification of three possible states including Wenzel's state, “Gecko” state and Cassie's state for Sb 2 S 3 film surfaces was also proposed to provide a better understanding of interesting surface phenomena on Sb 2 S 3 films.

Tunable CsPbBr3/Cs4PbBr6 phase transformation and their optical spectroscopic properties.

Science.gov (United States)

Chen, Xiao; Chen, Daqin; Li, Junni; Fang, Gaoliang; Sheng, Hongchao; Zhong, Jiasong

2018-04-24

As a novel type of promising materials, metal halide perovskites are a rising star in the field of optoelectronics. On this basis, a new frontier of zero-dimensional perovskite-related Cs4PbBr6 with bright green emission and high stability has attracted an enormous amount of attention, even though its photoluminescence still requires to clarification. Herein, the controllable phase transformation between three-dimensional CsPbBr3 and zero-dimensional Cs4PbBr6 is easily achieved in a facile ligand-assisted supersaturated recrystallization synthesis procedure via tuning the amount of surfactants, and their unique optical properties are investigated and compared in detail. Both Cs4PbBr6 and CsPbBr3 produce remarkably intense green luminescence with quantum yields up to 45% and 80%, respectively; however, significantly different emitting behaviors are observed. The fluorescence lifetime of Cs4PbBr6 is much longer than that of CsPbBr3, and photo-blinking is easily detected in the Cs4PbBr6 product, proving that the zero-dimensional Cs4PbBr6 is indeed a highly luminescent perovskite-related material. Additionally, for the first time, tunable emissions over the visible-light spectral region are demonstrated to be achievable via halogen composition modulations in the Cs4PbX6 (X = Cl, Br, I) samples. Our study brings a simple method for the phase control of CsPbBr3/Cs4PbBr6 and demonstrates the intrinsic luminescence nature of the zero-dimensional perovskite-related Cs4PbX6 products.

Hard magnetic off-stoichiometric (Fe,Sb){sub 2+x}Hf{sub 1-x} intermetallic phase

Energy Technology Data Exchange (ETDEWEB)

Goll, D.; Gross, T.; Loeffler, R.; Pflanz, U.; Vogel, T.; Kopp, A.; Grubesa, T.; Schneider, G. [Aalen University, Materials Research Institute (Germany)

2017-09-15

By high-throughput screening the ternary Fe-Hf-Sb system, off-stoichiometric (Fe,Sb){sub 2+x}Hf{sub 1-x} with a composition of Fe60.0-Hf26.5-Sb13.5 with high potential as hard magnetic phase is discovered. By quantitative domain structure analysis, promising intrinsic properties of J{sub s} ∝ 1 T, K{sub 1} ∝ 1.5 MJ m{sup -3} are found at room temperature. By magnetometry, bulk intrinsic properties of J{sub s} ∝ 0.7 T, K{sub 1} ∝ 1.4 MJ m{sup -3} are found. Alloying elements like Co or Mn turns out to be an effective adjusting screw on the crystal structure and ferromagnetic behavior. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of tungsten on the phase-change properties of Ge{sub 8}Sb{sub 2}Te{sub 11} Thin Films for the Phase-change device

Energy Technology Data Exchange (ETDEWEB)

Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin [Chonnam National University, Gwangju (Korea, Republic of)

2017-07-15

In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge{sub 8}Sb{sub 2}Te{sub 11} thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge{sub 8}Sb{sub 2}Te{sub 11} and W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E{sub op}), slope B{sup 1/2}, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B{sup 1/2} and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T{sub c}). An increase in the T{sub c} increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R{sub s}) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

Comparative study of the photodegradation of bisphenol A by HO·, SO{sub 4}·{sup −} and CO{sub 3}·{sup −}/HCO{sub 3}· radicals in aqueous phase

Energy Technology Data Exchange (ETDEWEB)

Sánchez-Polo, Manuel, E-mail: mansanch@ugr.es [Department of Inorganic Chemistry, Faculty of Science, University of Granada, 18071, Granada (Spain); Abdel daiem, Mahmoud M., E-mail: engdaim@ugr.es [Department of Inorganic Chemistry, Faculty of Science, University of Granada, 18071, Granada (Spain); Environmental Engineering Department, Faculty of Engineering, Zagazig University, 44519 Zagazig (Egypt); Ocampo-Pérez, Raúl, E-mail: raul_iqi@yahoo.com.mx [Department of Inorganic Chemistry, Faculty of Science, University of Granada, 18071, Granada (Spain); Centro de Investigacion y Estudios de Posgrado, Facultad de Ciencias Quimicas, Universidad Autonoma de San Luis Potosi, Av. Dr. M. Nava No. 6, San Luis Potosi, SLP 78210 (Mexico); Rivera-Utrilla, José, E-mail: jrivera@ugr.es [Department of Inorganic Chemistry, Faculty of Science, University of Granada, 18071, Granada (Spain); Mota, Antonio J., E-mail: mota@ugr.es [Department of Inorganic Chemistry, Faculty of Science, University of Granada, 18071, Granada (Spain)

2013-10-01

The aim of this study was to determine the effectiveness of oxidation processes based on UV radiation (UV, UV/H{sub 2}O{sub 2}, UV/K{sub 2}S{sub 2}O{sub 8}, and UV/Na{sub 2}CO{sub 3}) to remove bisphenol A (BPA) from aqueous solution. Results showed that UV radiation was not effective to remove BPA from the medium. The addition of radical promoters such as H{sub 2}O{sub 2}, K{sub 2}S{sub 2}O{sub 8}, or Na{sub 2}CO{sub 3} markedly increased the effectiveness of UV radiation through the generation of HO·, SO{sub 4}·{sup −}, or CO{sub 3}·{sup −}/HCO{sub 3}· radicals, respectively. The reaction rate constants between BPA and HO·, SO{sub 4}·{sup −}, and CO{sub 3}·{sup −}/HCO{sub 3}· radicals were k{sub HO}·{sub BPA} = 1.70 ± 0.21 × 10{sup 10} M{sup −1} s{sup −1}, k{sub SO{sub 4}}· - {sub BPA} = 1.37 ± 0.15 × 10{sup 9} M{sup −1} s{sup −1} and k{sub CO{sub 3}}· - {sub /HCO{sub 3}}·{sub BPA} = 3.89 ± 0.09 × 10{sup 6} M{sup −1} s{sup −1}, respectively. The solution pH had a major effect on BPA degradation with the UV/H{sub 2}O{sub 2} system, followed by UV/K{sub 2}S{sub 2}O{sub 8}, and UV/Na{sub 2}CO{sub 3} systems. All oxidation systems in this study showed 100% effectiveness to remove BPA from wastewater, due to its large content of natural organic matter (NOM), which can absorb UV radiation and generate excited triplet states ({sup 3}NOM*) and various reactive oxygen species. With all three systems, the total organic carbon in the medium was markedly decreased after 5 min of treatment. The toxicity of byproducts was higher than that of BPA when using UV/H{sub 2}O{sub 2}, similar to that of BPA with the UV/Na{sub 2}CO{sub 3} system, and lower than that of BPA after 40 min of treatment with the UV/K{sub 2}S{sub 2}O{sub 8} system. - Highlights: • Removal of bisphenol A (BPA) using UV, UV/H{sub 2}O{sub 2}, UV/K{sub 2}S{sub 2}O{sub 8}, or UV/Na{sub 2}CO{sub 3} was studied. • The reaction rate constants between BPA and HO·• , SO

CORRIGENDUM First principles study of crystalline and amorphous Ge2Sb2Te5 and the effects of stoichiometric defects First principles study of crystalline and amorphous Ge2Sb2Te5 and the effects of stoichiometric defects

Science.gov (United States)

Caravati, S.; Bernasconi, M.; Kühne, T. D.; Krack, M.; Parrinello, M.

2010-10-01

The distributions of coordination numbers reported in the insets of figure 7 actually refer to a bonding cutoff of 3.2 Å for all pairs of atoms. The distributions of coordination numbers referred to in the paper with bonding cutoff equal to 3.2 Å for all pairs but Sb-Te for which the bonding cutoff was set to the outer edge of the pair correlation function of c-GST (3.4 Å at 300 K) are given below for the three compounds. figure 1 Figure 7. Distribution of coordination numbers of different species obtained by integration of the partial pair correlation functions for (from left to right) Ge2Sb2Te5, Ge2Sb1.8Te5 and Ge2.2Sb2Te5.

Effects of Complex Modification by Sr–Sb on the Microstructures and Mechanical Properties of Al–18 wt % Mg2Si–4.5Cu Alloys

Science.gov (United States)

Sun, Youhong; Ma, Shaoming; Wang, Huiyuan; Chen, Lei; Gao, Ke; Ma, Yinlong; Liu, Baochang

2016-01-01

This research was carried out to investigate the influence of Sr–Sb on the microstructures and mechanical properties of Al–18 wt % Mg2Si–4.5Cu alloys. After the addition of 0.2 wt % Sr–Sb, the morphologies of primary Mg2Si transformed from equiaxed dendrite to cube in as-cast alloys and the average size of primary Mg2Si decreased from ~50 to ~20 μm. The shape of eutectic Mg2Si changed from Chinese script to short rod. After extrusion and T6 heat treatment, the ultimate tensile strength of modified alloy at room temperature (RT) and 100 °C increased respectively from 229 to 288 MPa, and from 231 to 272 MPa. The elongation-to-failure only slightly improved from 2.9% to 3.8% and from 3.3% to 3.7% at RT and 100 °C, respectively. The tensile fracture surface revealed a transition from brittle fracture to ductile fracture after modifying by 0.2 wt % Sr–Sb. PMID:28773282

First-Order Transitions and the Magnetic Phase Diagram of CeSb

DEFF Research Database (Denmark)

Lebech, Bente; Clausen, Kurt Nørgaard; Vogt, O.

1980-01-01

might exist in the magnetic phase diagram of CeSb at 16K for a field of approximately 0.3 T. The present study concludes that the transitions from the paramagnetic to the magnetically ordered states are of first order for fields below 0.8 T. Within the experimental accuracy no change has been observed......The high-temperature (14-17K) low-magnetic field (0-0.8 T) region of the phase diagram of the anomalous antiferromagnet CeSb has been reinvestigated by neutron diffraction in an attempt to locate a possible tricritical point. Previous neutron diffraction studies indicated that a tricritical point...

Shape and phase evolution from CsPbBr3 perovskite nanocubes to tetragonal CsPb2Br5 nanosheets with an indirect bandgap.

Science.gov (United States)

Li, Guopeng; Wang, Hui; Zhu, Zhifeng; Chang, Yajing; Zhang, Ting; Song, Zihang; Jiang, Yang

2016-09-13

Tetragonal CsPb 2 Br 5 nanosheets were obtained by an oriented attachment of orthorhombic CsPbBr 3 nanocubes, involving a lateral shape evolution from octagonal to square. Meanwhile, the experimental results, together with DFT simulation results, indicated that the tetragonal CsPb 2 Br 5 is an indirect bandgap semiconductor that is PL-inactive with a bandgap of 2.979 eV.

Photoemission study of the skutterudite compounds CoSb sub 3 and RhSb sub 3

CERN Document Server

Ishii, H; Fujimori, A; Nagamoto, Y; Koyanagi, T; Sofo, J O

2002-01-01

We have studied the electronic structure of the skutterudite compounds CoSb sub 3 and Co(Sb sub 0 sub . sub 9 sub 6 Te sub 0 sub . sub 0 sub 4) sub 3 by photoemission spectroscopy. Valence-band spectra revealed that a significant amount Sb 5p states are present near the Fermi level and are hybridized with Co 3d states just below it. The spectra are well reproduced by the band-structure calculation, suggesting that the effect of electron correlations is not important. When Te is substituted for Sb and n-type carriers are doped into CoSb sub 3 , the spectra are shifted to higher binding energies as described by the rigid-band model. From this shift and the free-electron model for the conduction and valence bands, we have estimated the band gap of CoSb sub 3 to be 0.03-0.04 eV, consistent with transport measurements. Photoemission spectra of RhSb sub 3 have also been measured and revealed expected similarities to and differences from those of CoSb sub 3. Unusual temperature dependence has been observed for the s...

Magnetization, resistivity, specific heat and ab initio calculations of Gd5Sb3.

Science.gov (United States)

Samatham, S Shanmukharao; Patel, Akhilesh Kumar; Lukoyanov, Alexey V; Suresh, K G

2018-06-07

We report on the combined results of structural, magnetic, transport and calorimetric properties of Mn₅Si₃-type hexagonal Gd₅Sb₃, together with ab-initio calculations. It exhibits a ferromagnetic (FM)-like transition at 265 K, antiferromagnetic (AFM) Néel transition at 95.5 K followed by a spin-orientation transition at 62 K. The system is found to be in AFM state down to 2 K in a field of 70 kOe. The FM-AFM phase coexistence is not noticeable despite large positive Curie-Weiss temperature (θ_CW = 223.5 ± 0.2 K). Instead, low-temperature AFM and high-temperature FM-like phases are separated in large temperatures. Temperature-magnetic field (H-T) phase diagram reveals field-driven complex magnetic phases. Within the AFM phase, the system is observed to undergo field-driven spin-orientation transitions. Field-induced tricritical and quantum critical points appear to be absent due to strong AFM nature and by the intervention of FM-like state between paramagnetic and AFM states, respectively. The metallic behavior of the compound is inferred from resistivity along with large Sommerfeld parameter. However, no sign of strong electron-correlations is reasoned from the Kadowaki-Wood's ratio A/γ² ∼ 1.9×10^-6 μΩ.cm.(mol.K)²(mJ)^-2, despite heavy γ. Essentially, ab initio calculations accounting for electronic correlations confirm AFM nature of low-temperature magnetic state in Gd₅Sb₃ and attainable FM ordering in agreement with experimental data. © 2018 IOP Publishing Ltd.

Enhancing Hybrid Perovskite Detectability in the Deep Ultraviolet Region with Down-Conversion Dual-Phase (CsPbBr3-Cs4PbBr6) Films.

Science.gov (United States)

Tong, Guoqing; Li, Huan; Zhu, Zhifeng; Zhang, Yan; Yu, Linwei; Xu, Jun; Jiang, Yang

2018-04-05

Hybrid perovskite photodetectors (PDs) exhibit outstanding performance in the ultraviolet-visible (UV-vis) spectrum but have poor detectability in the deep ultraviolet (DUV) region (200-350 nm). In this work, a novel inorganic-hybrid architecture that incorporates a dual-phase (CsPbBr 3 -Cs 4 PbBr 6 ) inorganic perovskite material as a down-conversion window layer and a hybrid perovskite as a light capture layer was prepared to achieve faster, highly sensitive photodetection in the DUV spectrum. A dual-phase inorganic perovskite film coated on the back surface of the photodetector enables strong light absorption and tunes the incident energy into emission bands that are optimized for the perovskite photodetector. The presence of Cs 4 PbBr 6 enhances the capture and down-conversion of the incident DUV light. Due to the down-conversion and transport of the DUV photons, a self-driven perovskite photodetector with this composite structure exhibits a fast response time of 7.8/33.6 μs and a high responsivity of 49.4 mA W -1 at 254 nm without extra power supply.

Chemically deposited Sb{sub 2}S{sub 3} thin films for optical recording

Energy Technology Data Exchange (ETDEWEB)

Shaji, S; Arato, A; Castillo, G Alan; Palma, M I Mendivil; Roy, T K Das; Krishnan, B [Facultad de IngenierIa Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P- 66450 (Mexico); O' Brien, J J; Liu, J, E-mail: bkrishnan@fime.uanl.m [Center for Nanoscience and Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One Univ. Blvd., St. Louis, MO - 63121 (United States)

2010-02-24

Laser induced changes in the properties of Sb{sub 2}S{sub 3} thin films prepared by chemical bath deposition are described in this paper. Sb{sub 2}S{sub 3} thin films of thickness 550 nm were deposited from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 {sup 0}C for 5 h. These thin films were irradiated by a 532 nm continuous wave laser beam under different conditions at ambient atmosphere. X-ray diffraction analysis showed amorphous to polycrystalline transformation due to laser exposure of these thin films. Morphology and composition of these films were described. Optical properties of these films before and after laser irradiation were analysed. The optical band gap of the material was decreased due to laser induced crystallization. The results obtained confirm that there is further scope for developing this material as an optical recording media.

Structure and decomposition of the silver formate Ag(HCO{sub 2})

Energy Technology Data Exchange (ETDEWEB)

Puzan, Anna N., E-mail: anna_puzan@mail.ru; Baumer, Vyacheslav N.; Mateychenko, Pavel V.

2017-02-15

Crystal structure of the silver formate Ag(HCO{sub 2}) has been determined (orthorhombic, sp.gr. Pccn, a=7.1199(5), b=10.3737(4), c=6.4701(3)Å, V=477.88(4) Å{sup 3}, Z=8). The structure contains isolated formate ions and the pairs Ag{sub 2}{sup 2+} which form the layers in (001) planes (the shortest Ag–Ag distances is 2.919 in the pair and 3.421 and 3.716 Å between the nearest Ag atoms of adjacent pairs). Silver formate is unstable compound which decompose spontaneously vs time. Decomposition was studied using Rietveld analysis of the powder diffraction patterns. It was concluded that the diffusion of Ag atoms leads to the formation of plate-like metal particles as nuclei in the (100) planes which settle parallel to (001) planes of the silver formate matrix. - Highlights: • Silver formate Ag(HCO{sub 2}) was synthesized and characterized. • Layered packing of Ag-Ag pairs in the structure was found. • Decomposition of Ag(HCO{sub 2}) and formation of metal phase were studied. • Rietveld-refined micro-structural characteristics during decomposition reveal the space relationship between the matrix structure and forming Ag phase REPLACE with: Space relationship between the matrix structure and forming Ag phase.

The crystal structure of Cs{sub 2}S{sub 2}O{sub 3}.H{sub 2}O

Energy Technology Data Exchange (ETDEWEB)

Winkler, Verena; Schlosser, Marc; Pfitzner, Arno [Regensburg Univ. (Germany). Inst. fuer Anorganische Chemie

2016-08-01

A reinvestigation of the alkali metal thiosulfates has led to the new phase Cs{sub 2}S{sub 2}O{sub 3}.H{sub 2}O. At first cesium thiosulfate monohydrate was obtained as a byproduct of the synthesis of Cs{sub 4}In{sub 2}S{sub 5}. Further investigations were carried out using the traditional synthesis reported by J. Meyer and H. Eggeling. Cs{sub 2}S{sub 2}O{sub 3}.H{sub 2}O crystallizes in transparent, colorless needles. The crystal structure of the title compound was determined by single crystal X-ray diffraction at room temperature: space group C2/m (No. 12), unit cell dimensions: a = 11.229(4), b = 5.851(2), c = 11.260(5) Aa, β = 95.89(2) , with Z = 4 and a cell volume of V = 735.9(5) Aa{sup 3}. The positions of all atoms including the hydrogen atoms were located in the structure refinement. Cs{sub 2}S{sub 2}O{sub 3}.H{sub 2}O is isotypic with Rb{sub 2}S{sub 2}O{sub 3}.H{sub 2}O. Isolated tetrahedra [S{sub 2}O{sub 3}]{sup 2-} are coordinated by the alkali metal cations, and in addition they serve as acceptors for hydrogen bonding. For both Cs atoms the shortest distances are observed to oxygen atoms of the S{sub 2}O{sub 3}{sup 2-} anions whereas the terminating sulfur atom has its shortest contacts to the water hydrogen atoms. Thus, an extended hydrogen bonding network is formed. The title compound has also been characterized by IR spectroscopy. IR spectroscopy reveals the vibrational bands of the water molecules at 3385 cm{sup -1}. They show a red shift in the OH stretching and bending modes as compared to free water. This is due both to the S..H hydrogen bonding and to the coordination of H{sub 2}O molecules to the cesium atoms.

Physico-chemical and optical properties of Er3+-doped and Er3+/Yb3+-co-doped Ge25Ga9.5Sb0.5S65 chalcogenide glass.

Czech Academy of Sciences Publication Activity Database

Himics, D.; Střižík, L.; Holubová, J.; Beneš, L.; Pálka, K.; Frumarová, Božena; Oswald, Jiří; Tverjanovich, A. S.; Wágner, T.

2017-01-01

Roč. 89, č. 4 (2017), s. 429-436 ISSN 0033-4545. [International Conference Solid State Chemistry 2016 /12./. Prague, 18.09.2016-23.09.2016] Institutional support: RVO:61389013 ; RVO:68378271 Keywords : chalcogenide glasses * erbium * Ga-Ge-Sb-S Subject RIV: CA - Inorganic Chemistry; CA - Inorganic Chemistry (FZU-D) OBOR OECD: Inorganic and nuclear chemistry; Inorganic and nuclear chemistry (FZU-D) Impact factor: 2.626, year: 2016

DWPF Simulant CPC Studies For SB8

Energy Technology Data Exchange (ETDEWEB)

Newell, J. D.

2013-09-25

Prior to processing a Sludge Batch (SB) in the Defense Waste Processing Facility (DWPF), flowsheet studies using simulants are performed. Typically, the flowsheet studies are conducted based on projected composition(s). The results from the flowsheet testing are used to 1) guide decisions during sludge batch preparation, 2) serve as a preliminary evaluation of potential processing issues, and 3) provide a basis to support the Shielded Cells qualification runs performed at the Savannah River National Laboratory (SRNL). SB8 was initially projected to be a combination of the Tank 40 heel (Sludge Batch 7b), Tank 13, Tank 12, and the Tank 51 heel. In order to accelerate preparation of SB8, the decision was made to delay the oxalate-rich material from Tank 12 to a future sludge batch. SB8 simulant studies without Tank 12 were reported in a separate report.1 The data presented in this report will be useful when processing future sludge batches containing Tank 12. The wash endpoint target for SB8 was set at a significantly higher sodium concentration to allow acceptable glass compositions at the targeted waste loading. Four non-coupled tests were conducted using simulant representing Tank 40 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry (146% acid) SRAT testing up to 31% of the DWPF hydrogen limit. SME hydrogen generation reached 48% of of the DWPF limit for the high acid run. Two non-coupled tests were conducted using simulant representing Tank 51 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry SRAT testing up to 16% of the DWPF limit. SME hydrogen generation reached 49% of the DWPF limit for hydrogen in the SME for the high acid run. Simulant processing was successful using previously established antifoam addition strategy. Foaming during formic acid addition was not observed in any of the runs. Nitrite was destroyed in all runs and no N2O was detected

Effect of laser irradiation on Ag4In12Sb56Te28

Science.gov (United States)

Chinnusamy, Rangasami

2018-04-01

Ag4In12Sb56Te28 has been synthesized by melt-quench method. Phase homogeneity, crystal structure and effect of laser irradiation have been investigated using X-ray diffraction (XRD) and Raman spectroscopy. Rietveld refinement of crystal structure revealed that Ag4In12Sb56Te28 is a multiphase system with AgIn3Te5, Sb8Te3 and Sb phases. Combined optical microscopy and Raman spectroscopy have been used to understand the distribution of different phases on the surface of the samples, which substantiated the results of Rietveld analysis. Interaction of 20 mW laser beam with samples has been investigated using Raman measurements. The results have shown that regions with large phase fraction of AgIn3Te5 become amorphous during laser-sample interaction, but the starting phase remains nearly same after the interaction. Regions with AgIn3Te5 and nearly equal or larger amount of Sb8Te3 have shown significant growth of α-Sb2O3 during and after laser-sample interaction. Regions rich in Sb have shown formation of AgIn3Te5 and growth of α-Sb2O3 during and after interaction. These observations have been explained based on the maximum temperature rise at different regions during laser-sample interaction.

Cl--HCO-3 antiport in rat lacrimal gland

International Nuclear Information System (INIS)

Lambert, R.W.; Bradley, M.E.; Mircheff, A.K.

1988-01-01

With the use of analytical subcellular fractionation and tracer uptake methods the authors have demonstrated the presence of a Cl - -HCO - 3 antiport mechanism in the rat exorbital lacrimal gland. They find that outwardly directed gradients of HCO - 3 and of 35 Cl - accelerated the flux of 36 Cl - into isolated membrane vesicles. Because vesicle membrane potentials were clamped to 0 mV with K + -valinomycin, the observed anion gradient-dependent acceleration of Cl - influx could not be attributed to conductive fluxes. The antiporter had an apparent K 0.5 for Cl - between 6 and 10 mM. It was sensitive to the stilbene derivatives 4-acetamido-4'-isothiocyanostilbene-2,2'-disulfonic acid (SITS) and 4,4'-diisothiocyanostilbene-2,2'-disulfonic acid (DIDS). It was also sensitive to the loop diuretic furosemide, which has frequently been used in tests for NaKCl 2 symporter activity. Other anions inhibited anion gradient-driven Cl - influx in the sequence SCN - > NO - 3 > Cl - HCO - 3 > SO 2- 4 . The density distribution of Cl - -HCO - 3 antiport activity indicated that ∼80% of the transporter was associated with intracellular membranes, suggesting the presence of cytoplasmic pools of functional antiporters. Because several studies have already shown the presence of Na + -H + antiporter activity in lacrimal acinar cell basolateral membranes, a cellular model for lacrimal acinar electrolyte secretion is proposed in which a parallel array of Cl - -HCO - 3 and Na + -H + antiporters mediates the Na + -dependent accumulation of Cl - against its electrochemical potential gradient

First-principles study lone-pair effects of Sb (III)-S chromophore influence on SHG response in quaternary potassium containing silver antimony sulfides

Energy Technology Data Exchange (ETDEWEB)

Huang, Junben [Key Laboratory of Functional Materials and Devices for Special Environments of CAS,, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011 (China); School of Physics Science and Technology, Xinjiang University, Urumqi 830046 (China); Su, Xin; Hou, Dianwei; Lei, Binghua [Key Laboratory of Functional Materials and Devices for Special Environments of CAS,, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Yang, Zhihua, E-mail: zhyang@ms.xjb.ac.cn [Key Laboratory of Functional Materials and Devices for Special Environments of CAS,, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011 (China); Pan, Shilie, E-mail: slpan@ms.xjb.ac.cn [Key Laboratory of Functional Materials and Devices for Special Environments of CAS,, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011 (China)

2017-05-15

First-principles studies of the geometric structures, electronic structures and optical properties of non-centrosymmetrical (NCS) KAg{sub 2}SbS{sub 4}, K{sub 2}AgSbS{sub 4} and K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} and centrosymmetrical (CS) KAg{sub 2}SbS{sub 3} and K{sub 3}Ag{sub 9}Sb{sub 4}S{sub 12} have been performed by means of density functional theory. It is indicated that although they have similarity in their anionic groups and, the electronic structures, prominent features of the optical anisotropy or second-order nonlinear optical (NLO) susceptibilities are apparently different. The calculated birefringences are 0.0537, 0.0343, 0.1324, 0.2217 and 0.0604 which are attributed to the different anionic groups [SbS{sub 3}] and triangles [AgS{sub 3}]. Also, the calculated NLO responses are about 0.5×, 1.0× and 2.0× times than that commercial AgGaS{sub 2} (AGS, d{sub 36}=11 pm/V) for K{sub 2}AgSbS{sub 4}, KAg{sub 2}SbS{sub 4} and K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7}, respectively. In comparison with the absolute magnitude of second harmonic generation (SHG) coefficients, the order K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7}>KAg{sub 2}SbS{sub 4}>K{sub 2}AgSbS{sub 4} is clearly established in the SHG response. Further analysis based on the real-space atom-cutting method reveals that the main sources of the SHG properties of these compounds are from the Sb-S group, especially K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} is mainly attributed to the lone pair stereochemical activity of Sb (III)-S group. - Graphical abstract: Compounds K{sub 2}AgSbS{sub 4}, KAg{sub 2}SbS{sub 4} and K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} exhibit second-order NLO response: 15×, 30× and 62× times than that KDP (KH{sub 2}PO{sub 4}, d{sub 36}=0.39 pm/V), respectively. First-principles methods reveal that the large SHG response of K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} is dominated by the Sb-S chromophore with lone pairs.

Thermoelectric properties of c-GeSb{sub 0.75}Te{sub 0.5} to h-GeSbTe{sub 0.5} thin films through annealing treatment effects

Energy Technology Data Exchange (ETDEWEB)

Vora-ud, Athorn, E-mail: athornvora-ud@snru.ac.th [Program of Physics, Faculty of Science and Technology, Sakon Nakhon Rajabhat University, Mueang District, Sakon Nakhon 47000 (Thailand); Thermoelectrics Research Center, Research and Development Institution, Sakon Nakhon Rajabhat University, Mueang District, Sakon Nakhon 47000 (Thailand); Horprathum, Mati, E-mail: mati.horprathum@nectec.or.th [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Eiamchai, Pitak [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Muthitamongkol, Pennapa; Chayasombat, Bralee; Thanachayanont, Chanchana [National Metal and Materials Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Pankiew, Apirak [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Klamchuen, Annop [National Nanotechnology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Naenkieng, Daengdech; Plirdpring, Theerayuth; Harnwunggmoung, Adul [Thermoelectric and Nanotechnology Research Center, Faculty of Science and Technology, Rajamangala University of Technology Suvarnabhumi, Huntra Phranakhon, Si Ayutthaya 13000 (Thailand); Charoenphakdee, Anek [NANO-Thermoelectrics Research Center, Division of Applied Physics, Faculty of Sciences and Liberal Arts, Rajamangala University of Technology Isan, Mueng Nakorn Ratchasima 30000 Thailand (Thailand); Somkhunthot, Weerasak [Program of Physics, Faculty of Science and Technology, Loei Rajabhat University, Muang District, Loei 42000 (Thailand); and others

2015-11-15

Germanium–Antimony–Tellurium (Ge–Sb–Te) thin films were deposited on silicon wafers with 1-μm silicon dioxide (SiO{sub 2}/Si) by pulsed dc magnetron sputtering from a 99.99% GeSbTe target of 1:1:1 ratio at ambient temperature. The samples were annealed at 573, 623, 673, and 723 K for 3600 s in a vacuum state. The effects of the annealing treatment on phase identification, atomic composition, morphology and film thickness, carrier concentration, mobility, and Seebeck coefficient of the Ge–Sb–Te samples have been investigated by grazing-incidence X-ray diffraction, auger electron spectroscopy, field-emission scanning electron microscopy, Hall-effect measurements, and steady state method, respectively. The results demonstrated that the as-deposited Ge–Sb–Te sample was amorphous. Atomic composition of as-deposited and annealed films at 573 K and 623 K were GeSb{sub 0.75}Te{sub 0.5} while annealed films at 673 K and 723 K were GeSbTe{sub 0.5} due to Sb-rich GeSb{sub 0.75}Te{sub 0.5}. The samples annealed at 573 K and 623 K showed the crystal phases of cubic structure (c-GeSb{sub 0.75}Te{sub 0.5}) into hexagonal structure (h-GeSbTe{sub 0.5}) after annealing at 673 K and 723 K. The study demonstrated the insulating condition from the as-deposited GeSbTe film, and the changes towards the thermoelectric properties from the annealing treatments. The GeSbTe films annealed at 673 K yielded excellent thermoelectric properties with the electrical resistivity, Seebeck coefficient, and power factor at approximately 1.45 × 10{sup −5} Ωm, 71.07 μV K{sup −1}, and 3.48 × 10{sup −4} W m{sup −1} K{sup −2}, respectively. - Highlights: • GeSbTe thin films were successfully sputtered for thermoelectric properties. • GeSbTe films were examined among physical, electrical and thermoelectric properties. • Thermoelectric properties were discussed based on composition of the films.

Solvothermal synthesis of graphene-Sb2S3 composite and the degradation activity under visible light

International Nuclear Information System (INIS)

Tao, Wenguang; Chang, Jiuli; Wu, Dapeng; Gao, Zhiyong; Duan, Xiaoli; Xu, Fang; Jiang, Kai

2013-01-01

Graphical abstract: Display Omitted Highlights: ► Graphene-Sb 2 S 3 composites were synthesized through a facile solvothermal method. ► Hydroxyl radicals are the main species responsible for the photodegradation activity. ► Graphene-Sb 2 S 3 demonstrated dramatically improved visible light degradation activity. -- Abstract: Novel graphene-Sb 2 S 3 (G-Sb 2 S 3 ) composites were synthesized via a facile solvothermal method with graphene oxide (GO), SbCl 3 and thiourea as the reactants. GO played an important role in controlling the size and the distribution of the formed Sb 2 S 3 nanoparticles on the graphene sheets with different density. Due to the negative surface charge, smaller Sb 2 S 3 particles size and efficient electrons transfer from Sb 2 S 3 to graphene, the composites demonstrated improved photodegradation activity on rhodamine B (RhB). Among these composites, the product G-Sb 2 S 3 0.1, which was synthesized with the GO concentration of 0.1 mg/mL, exhibited the highest photodegradation activity owing to the considerable density of Sb 2 S 3 nanoparticles onto graphene sheet free of aggregation. Hydroxyl radicals (·OH) derived from conduction band (CB) electrons of Sb 2 S 3 is suggested to be responsible for the photodegradation of RhB. The high visible light degradation activity and the satisfactory cycling stability made the as-prepared G-Sb 2 S 3 0.1 an applicable photocatalyst.

Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te3

Directory of Open Access Journals (Sweden)

Feng Hao

2017-03-01

Full Text Available Recently, Cu-containing p-type Bi0.5Sb1.5Te3 materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi0.5Sb1.5Te3 is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi0.5Sb1.5Te3 materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance—with a maximum thermoelectric figure of merit of around 1.4 at 430 K—has been achieved in Cu0.005Bi0.5Sb1.495Te3, which is 70% higher than the Bi0.5Sb1.5Te3 matrix.

Tsygankoite, Mn8Tl8Hg2(Sb21Pb2TlΣ24S48, a New Sulfosalt from the Vorontsovskoe Gold Deposit, Northern Urals, Russia

Directory of Open Access Journals (Sweden)

Anatoly V. Kasatkin

2018-05-01

Full Text Available Tsygankoite, ideally Mn8Tl8Hg2(Sb21Pb2TlΣ24S48, is a new sulfosalt discovered at the Vorontsovskoe gold deposit, Northern Urals, Russia. It occurs as lath-like elongated crystals up to 0.2 mm embedded in calcite–dolomite–clinochlore matrix. The associated minerals also include aktashite, alabandite, arsenopyrite, barite, cinnabar, fluorapatite, orpiment, pyrite, realgar, routhierite, sphalerite, tilasite, and titanite. The new mineral is non-fluorescent, black, and opaque with a metallic lustre and black streak. It is brittle with an uneven fracture and no obvious parting and cleavage. Its Vickers hardness (VHN10 is 144 kg/mm2 (range 131–167 kg/mm2 and its calculated density is 5.450 g cm. In reflected light, tsygankoite is white; between crossed polars it is dark grey to black. It is strongly anisotropic: rotation tints vary from light grey to dark grey to black. Pleochroism and internal reflections are not observed. The chemical composition of tsygankoite (wt %, electron-microprobe data is: Mn 6.29, Hg 5.42, Tl 26.05, Pb 5.84, As 3.39, Sb 30.89, S 21.87, total 99.75. The empirical formula, calculated on the basis of 90 atoms pfu, is: Mn8.06Tl8.00Hg1.90(Sb17.87As3.19Pb1.99Tl0.97Σ24.02S48.03. Tsygankoite is monoclinic, space group C2/m, a = 21.362(4 Å, b = 3.8579(10 Å, c = 27.135(4 Å, β = 106.944(14°, V = 2139.19(17 Å3 and Z = 1. The five strongest diffraction peaks from X-ray powder pattern (listed as (d,Å(I(hkl are: 3.587(100(112, 3.353(70(−114, 3.204(88(405, 2.841(72(−513, and 2.786(99(−514. The crystal structure of tsygankoite was refined from single-crystal X-ray diffraction data to R = 0.0607 and consists of an alternation of two thick layer-like arrays, one based on PbS-archetype and the second on SnS-archetype. Tsygankoite has been approved by the IMA-CNMNC under the number 2017-088. It is named for Mikhail V. Tsyganko, a mineral collector from Severouralsk, Northern Urals, Russia, who collected the samples where the

High-performance Ag0.8Pb18+xSbTe20 thermoelectric bulk materials fabricated by mechanical alloying and spark plasma sintering

International Nuclear Information System (INIS)

Wang Heng; Li Jingfeng; Nan Cewen; Zhou Min; Liu Weishu; Zhang Boping; Kita, Takuji

2006-01-01

Polycrystalline Ag n Pb m SbTe m+2n thermoelectric materials, whose compositions can be described as Ag 0.8 Pb 18+x SbTe 20 were prepared using a combined process of mechanical alloying and spark plasma sintering. Electric properties of the sintered samples with different Pb contents were measured from room temperature to 700 K. The maximum power factor of 1.766 mW/mK 2 was obtained at 673 K for the Ag 0.8 Pb 22 SbTe 20 sample, which corresponds to a high dimensionless figure of merit, ZT=1.37. This best composition is different from that reported before

Chemical Substitution-Induced and Competitive Formation of 6H and 3C Perovskite Structures in Ba3-xSrxZnSb2O9: The Coexistence of Two Perovskites in 0.3 ≤ x ≤ 1.0.

Science.gov (United States)

Li, Jing; Jiang, Pengfei; Gao, Wenliang; Cong, Rihong; Yang, Tao

2017-11-20

6H and 3C perovskites are important prototype structures in materials science. We systemically studied the structural evolution induced by the Sr 2+ -to-Ba 2+ substitution to the parent 6H perovskite Ba 3 ZnSb 2 O 9 . The 6H perovskite is only stable in the narrow range of x ≤ 0.2, which attributes to the impressibility of [Sb 2 O 9 ]. The preference of 90° Sb-O-Sb connection and the strong Sb 5+ -Sb 5+ electrostatic repulsion in [Sb 2 O 9 ] are competitive factors to stabilize or destabilize the 6H structure when chemical pressure was introduced by Sr 2+ incorporation. Therefore, in the following, a wide two-phase region containing 1:2 ordered 6H-Ba 2.8 Sr 0.2 ZnSb 2 O 9 and rock-salt ordered 3C-Ba 2 SrZnSb 2 O 9 was observed (0.3 ≤ x ≤ 1.0). In the final, the successive symmetry descending was established from cubic (Fm3̅m, 1.3 ≤ x ≤ 1.8) to tetragonal (I4/m, 2.0 ≤ x ≤ 2.4), and finally to monoclinic (I2/m, 2.6 ≤ x ≤ 3.0). Here we proved that the electronic configurations of B-site cations, with either empty, partially, or fully filled d-shell, would also affect the structure stabilization, through the orientation preference of the B-O covalent bonding. Our investigation gives a deeper understanding of the factors to the competitive formation of perovskite structures, facilitating the fine manipulation on their physical properties.

Copper substitutions in synthetic miargyrite α-AgSbS{sub 2} mineral: Synthesis, characterization and dielectrical properties

Energy Technology Data Exchange (ETDEWEB)

Galdámez, A., E-mail: agaldamez@uchile.cl [Departamento de Química, Facultad de Ciencias, Universidad de Chile, Casilla 653, Santiago (Chile); López-Vergara, F.; Veloso Cid, N.; Manríquez, V. [Departamento de Química, Facultad de Ciencias, Universidad de Chile, Casilla 653, Santiago (Chile); Ávila, R.E. [Departamento de Producción y Servicios, Comisión Chilena de Energía Nuclear, Casilla 188-D, Santiago (Chile)

2014-02-14

The nominal compositions Ag{sub 0.8}Cu{sub 0.2}SbS{sub 2} and Ag{sub 0.7}Cu{sub 0.3}SbS{sub 2} have been synthesized by conventional ceramic solid-state reaction at high temperature. X-ray diffraction (XRD) and scanning electron microscopy chemical analysis (SEM-EDAX) revealed single phases, isostructural to the natural miargyrite α-AgSbS{sub 2} mineral. Examination of the lattice parameters shows a decrease in the cell volume with increasing copper substitutions. The Raman analysis displays absorptions which may be assigned to the Sb–S stretching vibrations of the SbS{sub 3} pyramids. The impedance-frequency analysis showed grain boundary and electrode interface contributions in non-Debye type relaxation, following Jonscher's universal power law. The giant permittivity response is attributed to extrinsic effects without evidence of a ferroelectric transition. Summerfield scaling, leading to the superposition of impedance analysis, implies that the relaxation is thermally activated, without introducing more than one underlying transport mechanism. - Highlights: • Ag{sub 0.8}Cu{sub 0.2}SbS{sub 2} and Ag{sub 0.7}Cu{sub 0.3}SbS{sub 2} are isostructural with the natural miargyrite α-AgSbS{sub 2} mineral. • The overall resistance correspond to grain boundary and electrode/sample interface responses. • In these solid solutions no ferroelectric-like transition is noticed. • The overall frequency dependence follows the Jonscher's universal power law. • σ{sub ac} vs. frequency can be normalized by Summerfield scaling procedure.

Barikaite, Pb₁₀Ag₃(Sb₈As₁₁)Σ₁₉S₄₀, a new member of the sartorite homologous series

DEFF Research Database (Denmark)

Topa, Dan; Makovicky, Emil; Tajeddin, H.

2013-01-01

-AsSb-Pb-rich sulfosalts, tetrahedrite-tennantite, realgar, pyrite and electrum. Barikaite appears as inclusions in guettardite. The mineral is opaque, greyish black with a metallic lustre; it is brittle without any discernible cleavage. In reflected light barikaite is greyish white, pleochroism is distinct, white to dark.......37 (on the basis of 32Me + 40S = 72 a.p.f.u.). The simplified formula, Pb10Ag3(Sb8As11)Σ19S40, is in accordance with the results of a crystal-structure analysis, and requires Pb 37.89, Ag 5.91, Sb 17.79, As 15.05 and S 23.42 (wt.%). The variation of chemical composition is minor, the empirical formula......). The strongest eight lines in the (calculated) powder-diffraction pattern [d in Å(I)(hkl)] are: 3.835(63)(022), 3.646(100)(016), 3.441(60)(212), 3.408(62)(214), 2.972(66)(216), 2.769(91)(222), 2.752(78)(424) and 2.133(54)(402). Barikaite is the N = 4 member of the sartorite homologous series with a near...

Water-resistant, monodispersed and stably luminescent CsPbBr3/CsPb2Br5 core-shell-like structure lead halide perovskite nanocrystals

Science.gov (United States)

Qiao, Bo; Song, Pengjie; Cao, Jingyue; Zhao, Suling; Shen, Zhaohui; Gao, Di; Liang, Zhiqin; Xu, Zheng; Song, Dandan; Xu, Xurong

2017-11-01

Lead halide perovskite materials are thriving in optoelectronic applications due to their excellent properties, while their instability due to the fact that they are easily hydrolyzed is still a bottleneck for their potential application. In this work, water-resistant, monodispersed and stably luminescent cesium lead bromine perovskite nanocrystals coated with CsPb2Br5 were obtained using a modified non-stoichiometric solution-phase method. CsPb2Br5 2D layers were coated on the surface of CsPbBr3 nanocrystals and formed a core-shell-like structure in the synthetic processes. The stability of the luminescence of the CsPbBr3 nanocrystals in water and ethanol atmosphere was greatly enhanced by the photoluminescence-inactive CsPb2Br5 coating with a wide bandgap. The water-stable enhanced nanocrystals are suitable for long-term stable optoelectronic applications in the atmosphere.

Synthesis and characterization of Fe-Ti-Sb intermetallic compounds: Discovery of a new Slater-Pauling phase

Science.gov (United States)

Naghibolashrafi, N.; Keshavarz, S.; Hegde, Vinay I.; Gupta, A.; Butler, W. H.; Romero, J.; Munira, K.; LeClair, P.; Mazumdar, D.; Ma, J.; Ghosh, A. W.; Wolverton, C.

2016-03-01

Compounds of Fe, Ti, and Sb were prepared using arc melting and vacuum annealing. Fe2TiSb , expected to be a full Heusler compound crystallizing in the L 21 structure, was shown by XRD and SEM analyses to be composed of weakly magnetic grains of nominal composition Fe1.5TiSb with iron-rich precipitates in the grain boundaries. FeTiSb, a composition consistent with the formation of a half-Heusler compound, also decomposed into Fe1.5TiSb grains with Ti-Sb rich precipitates and was weakly magnetic. The dominant Fe1.5TiSb phase appears to crystallize in a defective L 21 -like structure with iron vacancies. Based on this finding, a first-principles DFT-based binary cluster expansion of Fe and vacancies on the Fe sublattice of the L 21 structure was performed. Using the cluster expansion, we computationally scanned >103 configurations and predict a novel, stable, nonmagnetic semiconductor phase to be the zero-temperature ground state. This new structure is an ordered arrangement of Fe and vacancies, belonging to the space group R 3 m , with composition Fe1.5TiSb , i.e., between the full- and half-Heusler compositions. This phase can be visualized as alternate layers of L 21 phase Fe2TiSb and C 1b phase FeTiSb, with layering along the [111] direction of the original cubic phases. Our experimental results on annealed samples support this predicted ground-state composition, but further work is required to confirm that the R 3 m structure is the ground state.

Electronic structure and high pressure phase transition in LaSb and CeSb

International Nuclear Information System (INIS)

Mathi Jaya, S.; Sanyal, S.P.

1992-09-01

The electronic structure and high pressure structural phase transition in cerium and lanthanum antimonides have been investigated using the tight binding LMTO method. The calculation of total energy reveals that the simple tetragonal structure is found to be stable at high pressures for both the compounds. In the case of LaSb, the calculated value of the equilibrium cell volume and the cell volume at which phase transition occurs are found to have a fairly good agreement with the experimental results. However, in the case of CeSb, the agreement is not as good as in LaSb. We also predicted the most favoured c/a value in the high pressure phase (simple tetragonal) for these compounds. Further we present the calculated results on the electronic structure of these systems at the equilibrium as well as at the reduced cell volumes. (author). 8 refs, 11 figs, 1 tab

[Energy pooling collisions for K(4P) + Cs(5D) in a K-Cs mixture].

Science.gov (United States)

Aihemaiti, Pulati; Dai, Kang; Lu, Xin-hong; Shen, Yi-fan

2005-04-01

The rate coefficients for energy-pooling collisions K(4P) + Cs(5D) --> Cs(6S) + K(4D, 6S) in the K-Cs vapor mixture were measured relative to a known energy-pooling rate coefficient of a homonuclear reaction [i. e., Cs(6P) + Cs(5D) --> Cs(6S) + Cs (7D(J))]. Populations of the Cs(6P, 5D) and K(4P) states were produced by photodissociation of K2 and Cs2 molecules through the use of a dye laser radiation. The resulting fluorescence included the direct components emitted in the decay of the excited states produced by photodissociation and the induced components arising from the collisionally populated states. By combining relative intensities of the components with the effective lifetimes of Cs(6P) and K(4P) states, the rate coefficients (in units of 10(-9) cm3 x s(-1)) for the heteronuclear energy-pooling were found to be 2.6 and 3.6, respectively. The contribution to the rate coefficients from other processes are discussed.

Tunable surface wettability and water adhesion of Sb{sub 2}S{sub 3} micro-/nanorod films

Energy Technology Data Exchange (ETDEWEB)

Zhong, Xin; Zhao, Huiping [Key Laboratory for Green Chemical Process of Ministry of Education and Hubei Novel Reactor and Green Chemical Technology Key Laboratory, Wuhan Institute of Technology, Xiongchu Street, Wuhan 430073 (China); Yang, Hao, E-mail: hyangwit@hotmail.com [Key Laboratory for Green Chemical Process of Ministry of Education and Hubei Novel Reactor and Green Chemical Technology Key Laboratory, Wuhan Institute of Technology, Xiongchu Street, Wuhan 430073 (China); Liu, Yunling [State Key laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China); Yan, Guoping [Key Laboratory for Green Chemical Process of Ministry of Education and Hubei Novel Reactor and Green Chemical Technology Key Laboratory, Wuhan Institute of Technology, Xiongchu Street, Wuhan 430073 (China); Chen, Rong, E-mail: rchenhku@hotmail.com [Key Laboratory for Green Chemical Process of Ministry of Education and Hubei Novel Reactor and Green Chemical Technology Key Laboratory, Wuhan Institute of Technology, Xiongchu Street, Wuhan 430073 (China)

2014-01-15

Antimony sulfide (Sb{sub 2}S{sub 3}) films were successfully prepared by spin coating Sb{sub 2}S{sub 3} micro-/nanorods with different sizes on glass slides, which was synthesized via a facile and rapid microwave irradiation method. The prepared Sb{sub 2}S{sub 3} micro-/nanorods and films were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and water contact angle (CA). The as-prepared Sb{sub 2}S{sub 3} films exhibited different surface wettabilities ranging from superhydrophilicity to superhydrophobicity, which was strongly dependent on the diameter of Sb{sub 2}S{sub 3} micro-/nanorod. Sb{sub 2}S{sub 3} film made by nanorods possessed superhydrophobic surface and high water adhesive property. After surface modification with stearic acid, the superhydrophobic surface exhibited an excellent self-cleaning property owing to its low adhesive force. The clarification of three possible states including Wenzel's state, “Gecko” state and Cassie's state for Sb{sub 2}S{sub 3} film surfaces was also proposed to provide a better understanding of interesting surface phenomena on Sb{sub 2}S{sub 3} films.

Coprecipitation of 137Cs and 85Sr microquantities with complex compound [M(18-crown-6)]BPH4 (M=Na+, Cs+) from neutral and alkaline solutions

International Nuclear Information System (INIS)

Konovalova, N.A.; Rumer, I.A.; Kulyukhin, S.A.

2009-01-01

The paper reports the possibility of joint separation of 137 Cs and 85 Sr from neutral and alkaline aqueous solutions by their coprecipitation with the solid phase of complex compounds [M(18-crown-6)]BPh 4 (M=Na + , Cs + ), as well as to study the coprecipitation of 137 Cs and 85 Sr with the solid phase CsBPh 4 . It is found that complex compounds [M(18-crown-6)]BPh 4 (M=Na + , Cs + ) increased the degree of 85 Sr separation from solutions virtually two- to threefold vs. CsBPh 4 . Chloride and nitrate were found to have hardly any impact on the coprecipitation of 137 Cs and 85 Sr with [M(18-crown-6)]BPh 4 (M = Na + , Cs + ). (orig.)

Radiosynthesis of (S)-["1"8F]T1: The first PET radioligand for molecular imaging of α3β4 nicotinic acetylcholine receptors

International Nuclear Information System (INIS)

Sarasamkan, Jiradanai; Fischer, Steffen; Deuther-Conrad, Winnie; Ludwig, Friedrich-Alexander; Scheunemann, Matthias; Arunrungvichian, Kuntarat; Vajragupta, Opa; Brust, Peter

2017-01-01

Recent pharmacologic data revealed the implication of α3β4 nicotinic acetylcholine receptors (nAChRs) in nicotine and drug addiction. To image α3β4 nAChRs in vivo, we aimed to establish the synthesis of a ["1"8F]-labelled analog of the highly affine and selective α3β4 ligand (S)-3-(4-(4-fluorophenyl)-1H-1,2,3-triazol-1-yl)quinuclidine ((S)-T1). (S)-["1"8F]T1 was synthesized from ethynyl-4-["1"8F]fluorobenzene (["1"8F]5) and (S)-azidoquinuclidine by click reaction. After a synthesis time of 130 min (S)-["1"8F]T1 was obtained with a radiochemical yield (non-decay corrected) of 4.3±1.3%, a radiochemical purity of >99% and a molar activity of >158 GBq/μmol. The brain uptake and the brain-to-blood ratio of (S)-["1"8F]T1 in mice at 30 min post injection were 2.02 (SUV) and 6.1, respectively. According to an ex-vivo analysis, the tracer remained intact (>99%) in brain. Only one major radiometabolite was detected in plasma and urine samples. In-vitro autoradiography on pig brain slices revealed binding of (S)-["1"8F]T1 to brain regions associated with the expression of α3β4 nAChRs, which could be reduced by the α3β4 nAChR selective drug AT-1001. These findings make (S)-["1"8F]T1 a potential tool for the non-invasive imaging of α3β4 nAChRs in the brain by PET. - Highlights: • (S)-["1"8F]T1 is a promising α3ß4 nAChR ligand for PET imaging. • The novel radioligand (S)-["1"8F]T1 was synthesized by click reaction. • The potential of (S)-["1"8F]T1 was shown by in vitro autoradiography and in vivo evaluation in mice.

First-principles study of new series of quaternary Heusler alloys CsSrCZ (Z=Si, Ge, Sn, P, As, and Sb)

Energy Technology Data Exchange (ETDEWEB)

Bouabça, A. [Condensed Matter and Sustainable Development Laboratory (LMCDD), University of Sidi Bel-Abbes, Sidi Bel-Abbes 22000 (Algeria); Rozale, H., E-mail: hrozale@yahoo.fr [Condensed Matter and Sustainable Development Laboratory (LMCDD), University of Sidi Bel-Abbes, Sidi Bel-Abbes 22000 (Algeria); Amar, A. [Condensed Matter and Sustainable Development Laboratory (LMCDD), University of Sidi Bel-Abbes, Sidi Bel-Abbes 22000 (Algeria); Wang, X.T. [School of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400044 (China); Sayade, A. [UCCS, CNRS-UMR 8181, Université d’Artois, Faculté des Sciences Jean Perrin, Rue Jean Souvraz, SP 18, 62307 Lens Cedex (France); Chahed, A. [Condensed Matter and Sustainable Development Laboratory (LMCDD), University of Sidi Bel-Abbes, Sidi Bel-Abbes 22000 (Algeria)

2016-12-01

The structural, electronic, magnetic, and thermal properties of new quaternary Heusler alloys CsSrCZ (Z=Si, Ge, Sn, P, As, and Sb) were investigated using the full-potential linearized augmented plane wave (FPLAPW) within the generalized gradient approximation (GGA) and GGA plus modified Becke and Johnson as the exchange correlation. The results showed that all Heusler compounds were stable in Type (I) structure. The CsSrCZ (Z=Si, Ge, Sn) compounds had a nearly HM characteristic, and CsSrCZ (Z=P, As, Sb) compounds were true half-metallic (HM) ferromagnets. The strong spin polarization of p orbital for C, Si, Ge, Sn, P, As, and Sb atoms is found to be the origin of ferromagnetic. The half-metallicity is preserved up to a lattice contraction of 3.45%, 1.69%, 1.69%, 7.16%, 7.16%, and 11.2% for all six quaternary Heusler compounds. We also investigated the thermal effects using the quasi-harmonic Debye model. - Highlights: • Electronic, magnetic, and thermodynamic properties of CsSrCZ (Z=Si, Ge, Sn, P, As, and Sb) are investigated. • Until now, there have been no reports theoretical and experimental studies on d{sup 0} half-metals with quaternary structures. • The strong spin polarization of p orbital for C, Si, Ge, Sn, P, As, and Sb atoms is found to be the origin of ferromagnetic. • The half-metallicity is preserved up to a lattice contraction.

Phase stability and lattice thermal conductivity reduction in CoSb{sub 3} skutterudites, doped with chalcogen atoms

Energy Technology Data Exchange (ETDEWEB)

Battabyal, M., E-mail: manjusha.battabyal@project.arci.res.in; Priyadarshini, B.; Gopalan, R. [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Taramani, Chennai-600113 (India); Pradipkanti, L.; Satapathy, Dillip K. [Department of Physics, Indian Institute of Technology Madras, Chennai-600036 (India)

2016-07-15

We report a significant reduction in the lattice thermal conductivity of the CoSb{sub 3} skuttertudites, doped with chalcogen atoms. Te/Se chalcogen atoms doped CoSb{sub 3} skutterudite samples (Te{sub 0.1}Co{sub 4}Sb{sub 12}, Se{sub 0.1}Co{sub 4}Sb{sub 12}, Te{sub 0.05}Se{sub 0.05}Co{sub 4}Sb{sub 12}) are processed by ball milling and spark plasma sintering. X-ray diffraction data combined with energy dispersive X-ray spectra indicate the doping of Te/Se chalcogen atoms in the skutterudite. The temperature dependent X-ray diffraction confirms the stability of the Te/Se doped CoSb{sub 3} skutterudite phase and absence of any secondary phase in the temperature range starting from 300 K to 773 K. The Raman spectroscopy reveals that different chalcogen dopant atoms cause different resonant optical vibrational modes between the dopant atom and the host CoSb{sub 3} skutterudite lattice. These optical vibrational modes do scatter heat carrying acoustic phonons in a different spectral range. It was found that among the Te/Se chalcogen atoms, Te atoms alter the host CoSb{sub 3} skutterudite lattice vibrations to a larger extent than Se atoms, and can potentially scatter more Sb related acoustic phonons. The Debye model of lattice thermal conductivity confirms that the resonant phonon scattering has important contributions to the reduction of lattice thermal conductivity in CoSb{sub 3} skutterudites doped with Te/Se chalcogen atoms. Lattice thermal conductivity ∼ 0.9 W/mK at 773 K is achieved in Te{sub 0.1}Co{sub 4}Sb{sub 12} skutterudites, which is the lowest value reported so far in CoSb{sub 3} skutterudites, doped with single Te chalcogen atom.

Transportation properties of amorphous state InSb and its metastable middle phase

International Nuclear Information System (INIS)

Cao Xiaowen

1990-09-01

The variation of the substrate temperature induces the metal-semiconductor transition in the condensation InSb films at low temperatrue. The electron conduction is dominant in the metal-type amorphous InSb and the hole in semiconductor-type one. In the metal-type amorphous InSb the electron-electron is correlated under the field above 0.1T in the temperature region of liquid nitrogen. The structure relaxation leads to not only the increase of the short range order but also the change of electron structure in metal-type amorphous InSb. The first conductance jump originates mainly from the increase of Hall mobility of the carrier, i.e. the increase of the short range order, and the system relaxes from the liquid-like to the lattice-like amorphous state. The three types of the crystallization phase transition for the metal-type amorphous InSb present obviously different transportation behaviours. Both metal-type amorphous state and metastable middle phase of InSb all are one of superconducting system with the lowest carrier concentration (n 0 ∼10 18 cm -3 ). Superconducting T c of the metastable middle phase is related to the state density near Fermi surface, i.e. the higher T c corresponds to the higher state density. The quasi-two-dimensional structure is favourable to superconductivity

Combination of cisplatin/S-1 in the treatment of patients with advanced gastric or gastroesophageal adenocarcinoma: Results of noninferiority and safety analyses compared with cisplatin/5-fluorouracil in the First-Line Advanced Gastric Cancer Study.

Science.gov (United States)

Ajani, J A; Buyse, M; Lichinitser, M; Gorbunova, V; Bodoky, G; Douillard, J Y; Cascinu, S; Heinemann, V; Zaucha, R; Carrato, A; Ferry, D; Moiseyenko, V

2013-11-01

The aim of developing oral fluorouracil (5-FU) is to provide a more convenient administration route with similar efficacy and the best achievable tolerance. S-1, a novel oral fluoropyrimidine, was specifically designed to overcome the limitations of intravenous fluoropyrimidine therapies. A multicentre, randomised phase 3 trial was undertaken to compare S-1/cisplatin (CS) with infusional 5-FU/cisplatin (CF) in 1053 patients with untreated, advanced gastric/gastroesophageal adenocarcinoma. This report discusses a post-hoc noninferiority overall survival (OS) and safety analyses. Results (1029 treated; CS = 521/CF = 508) revealed OS in CS (8.6 months) was statistically noninferior to CF (7.9 months) [hazard ratio (HR) = 0.92 (two-sided 95% confidence interval (CI), 0.80-1.05)] for any margin equal to or greater than 1.05. Statistically significant safety advantages for the CS arm were observed [G3/4 neutropenia (CS, 18.6%; CF, 40.0%), febrile neutropenia (CS, 1.7%; CF, 6.9%), G3/4 stomatitis (CS, 1.3%; CF, 13.6%), diarrhoea (all grades: CS, 29.2%; CF, 38.4%) and renal adverse events (all grades: CS, 18.8%; CF, 33.5%)]. Hand-foot syndrome, infrequently reported, was mainly grade 1/2 in both arms. Treatment-related deaths were significantly lower in the CS arm than the CF arm (2.5% and 4.9%, respectively; Psafety profile and provides a new treatment option for patients with advanced gastric carcinoma. Copyright © 2013 Elsevier Ltd. All rights reserved.

Syntheses, and crystal and electronic structures of the new Zintl phases Na2ACdSb2 and K2ACdSb2 (A=Ca, Sr, Ba, Eu, Yb): Structural relationship with Yb2CdSb2 and the solid solutions Sr2-xAxCdSb2, Ba2-xAxCdSb2 and Eu2-xYbxCdSb2

International Nuclear Information System (INIS)

Saparov, Bayrammurad; Saito, Maia; Bobev, Svilen

2011-01-01

Presented are the details of the syntheses, crystal and electronic structures of a new family of Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb), as well as the solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 . The structures of Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) were determined to be of a new type with the non-centrosymmetric space group Pmc2 1 (no. 26), Pearson symbol oP12, with lattice parameters a=4.684(1)-4.788(1) A; b=9.099(3)-9.117(2) A; c=7.837(1)-8.057(2) A for the Na 2 ACdSb 2 series, and a=4.6637(9)-5.0368(8) A; b=9.100(2)-9.8183(15) A; and c=7.7954(15)-8.4924(13) A for K 2 ACdSb 2 , respectively. The solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 (x∼1) are isostructural and isoelectronic to the recently reported Yb 2 CdSb 2 (space group Cmc2 1 (no. 36), Pearson symbol cP20). All discussed structures are based upon CdSb 2 4- polyanionic layers, similar to the ones observed in Yb 2 CdSb 2 , with various alkali- and/or alkaline-earth cations coordinated to them. Magnetic susceptibility and Seebeck coefficient measurements on selected Eu 2-x Yb x CdSb 2 samples, taken at low temperatures up to 300 K, are also reported. -- Graphical abstract: The quaternary Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) with novel layered structures have been synthesized for the first time and structurally characterized by single-crystal X-ray diffraction. Reported as well are the results from crystallographic and property studies of the closely related solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) are new quaternary Zintl phases. → Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 4 tetrahedra. → Eu 2-x Yb x CdSb 2 (1< x<2) exhibit high Seebeck coefficient (217 μV/K at RT).

Effect of Native Defects on Transport Properties in Non-Stoichiometric CoSb3

Directory of Open Access Journals (Sweden)

Paula R. Realyvázquez-Guevara

2017-03-01

Full Text Available The effect of native defects originated by a non-stoichiometric variation of composition in CoSb3 on I-V curves and Hall effect was investigated. Hysteretic and a non-linear behavior of the  I-V curves at cryogenic temperatures were observed; the non-linear behavior originated from the Poole-Frenkel effect, a field-dependent ionization mechanism that lowers Coulomb barriers and increases emission of charge carriers, and the hysteresis was attributed to the drastic decrease of specific heat which produces Joule heating at cryogenic temperatures. CoSb3 is a narrow gap semiconductor and slight variation in the synthesis process can lead to either n- or p-type conduction. The Sb-deficient CoSb3 presented an n-type conduction. Using a single parabolic model and assuming only acoustic-phonon scattering the charge transport properties were calculated at 300 K. From this model, a carrier concentration of 1.18 × 1018 cm−3 and a Hall factor of 1.18 were calculated. The low mobility of charge carriers, 19.11 cm2/V·s, and the high effective mass of the electrons, 0.66 m0, caused a high resistivity value of 2.75 × 10−3 Ω·m. The calculated Lorenz factor was 1.50 × 10−8 V2/K2, which represents a decrease of 38% over the degenerate limit value (2.44 × 10−8 V2/K2.

Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory

International Nuclear Information System (INIS)

Wang, Qing; Xia, Yangyang; Zheng, Yonghui; Zhang, Qi; Liu, Bo; Song, Sannian; Cheng, Yan; Song, Zhitang; Feng, Songlin; Huo, Ruru

2015-01-01

Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Its storage medium, phase change material, has attracted continuous exploration. Ge 2 Sb 2 Te 5 (GST) is the most popular phase change material, but its thermal stability needs to be improved when used in some fields at high temperature (more than 120 °C). In this paper, we doped Cr atoms into GST and obtained Cr 10 (Ge 2 Sb 2 Te 5 ) 90 (labeled as Cr-GST) with high thermal stability. For Cr-GST film, the sheet resistance ratio between amorphous and crystalline states is high up to 3 orders of magnitude. The crystalline Cr-GST film inherits the phase structure of GST, with metastable face-centered cubic phase and/or stable hexagonal phase. The doped Cr atoms not only bond with other atoms but also help to improve the anti-oxidation property of Cr-GST. As for the amorphous thermal stability, the calculated temperature for 10-year-data-retention of Cr-GST film, based on the Arrhenius equation, is about 180 °C. The threshold current and threshold voltage of a cell based on Cr-GST are about 6 μA and 2.7 V. The cell could be operated by suitable voltages for more than 40 000 cycles. Thus, Cr-GST is proved to be a promising phase change material with ultra-long data retention

New antiferromagnetic semiconductor CuCr1.5Sb0.5S4

International Nuclear Information System (INIS)

Kesler, Ya.A.; Koroleva, L.I.; Mikheev, M.G.; Odintsov, A.G.; Filimonov, D.S.

1993-01-01

New halcogenide compound with spinel-antiferromagnetic semiconductor CuCr 1.5 Sb 0.5 S 4 are obtained and studied for the first time. Magnetic properties of this compound, namely, magnetization linear dependence, maximum on PHI(T) curve in the low-temperature area and realization of the Curie-Weis law for paramagnetic susceptibility with negative paramagnetic temperature testiby to the fact that this compound is antiferromagnetic

HCO3(-)-coupled Na+ influx is a major determinant of Na+ turnover and Na+/K+ pump activity in rat hepatocytes

International Nuclear Information System (INIS)

Fitz, J.G.; Lidofsky, S.D.; Weisiger, R.A.; Xie, M.H.; Cochran, M.; Grotmol, T.; Scharschmidt, B.F.

1991-01-01

Recent studies in hepatocytes indicate that Na(+)-coupled HCO3- transport contributes importantly to regulation of intracellular pH and membrane HCO3- transport. However, the direction of net coupled Na+ and HCO3- movement and the effect of HCO3- on Na+ turnover and Na+/K+ pump activity are not known. In these studies, the effect of HCO3- on Na+ influx and turnover were measured in primary rat hepatocyte cultures with 22Na+, and [Na+]i was measured in single hepatocytes using the Na(+)-sensitive fluorochrome SBFI. Na+/K+ pump activity was measured in intact perfused rat liver and hepatocyte monolayers as Na(+)-dependent or ouabain-suppressible 86Rb uptake, and was measured in single hepatocytes as the effect of transient pump inhibition by removal of extracellular K+ on membrane potential difference (PD) and [Na+]i. In hepatocyte monolayers, HCO3- increased 22Na+ entry and turnover rates by 50-65%, without measurably altering 22Na+ pool size or cell volume, and HCO3- also increased Na+/K+ pump activity by 70%. In single cells, exposure to HCO3- produced an abrupt and sustained rise in [Na+]i from approximately 8 to 12 mM. Na+/K+ pump activity assessed in single cells by PD excursions during transient K+ removal increased congruent to 2.5-fold in the presence of HCO3-, and the rise in [Na+]i produced by inhibition of the Na+/K+ pump was similarly increased congruent to 2.5-fold in the presence of HCO3-. In intact perfused rat liver, HCO3- increased both Na+/K+ pump activity and O2 consumption. These findings indicate that, in hepatocytes, net coupled Na+ and HCO3- movement is inward and represents a major determinant of Na+ influx and Na+/K+ pump activity. About half of hepatic Na+/K+ pump activity appears dedicated to recycling Na+ entering in conjunction with HCO3- to maintain [Na+]i within the physiologic range

Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

International Nuclear Information System (INIS)

Fu Jing; Shen Xiang; Nie Qiuhua; Wang Guoxiang; Wu Liangcai; Dai Shixun; Xu Tiefeng; Wang, R.P.

2013-01-01

Highlights: ► Mg-doped Ge 2 Sb 2 Te 5 (GST) phase change films with higher resistance and better thermal stability have been proposed. ► The increase of Mg content result in an enhancement in crystallization temperature, activation energy and electrical resistance. ► The proper Mg addition in GST can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase. ► The formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhancement thermal stability in Mg-doped GST films. - Abstract: Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhanced thermal stability in Mg-doped GST films.

Low-Temperature Bonding of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrodes Using a Thin-Film In Interlayer

Science.gov (United States)

Lin, Yan-Cheng; Yang, Chung-Lin; Huang, Jing-Yi; Jain, Chao-Chi; Hwang, Jen-Dong; Chu, Hsu-Shen; Chen, Sheng-Chi; Chuang, Tung-Han

2016-09-01

A Bi0.5Sb1.5Te3 thermoelectric material electroplated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode at low temperatures of 448 K (175 °C) to 523 K (250 °C) using a 4- μm-thick In interlayer under an external pressure of 3 MPa. During the bonding process, the In thin film reacted with the Ag layer to form a double layer of Ag3In and Ag2In intermetallic compounds. No reaction occurred at the Bi0.5Sb1.5Te3/Ni interface, which resulted in low bonding strengths of about 3.2 MPa. The adhesion of the Bi0.5Sb1.5Te3/Ni interface was improved by precoating a 1- μm Sn film on the surface of the thermoelectric element and preheating it at 523 K (250 °C) for 3 minutes. In this case, the bonding strengths increased to a range of 9.1 to 11.5 MPa after bonding at 473 K (200 °C) for 5 to 60 minutes, and the shear-tested specimens fractured with cleavage characteristics in the interior of the thermoelectric material. The bonding at 448 K (175 °C) led to shear strengths ranging from 7.1 to 8.5 MPa for various bonding times between 5 and 60 minutes, which were further increased to the values of 10.4 to 11.7 MPa by increasing the bonding pressure to 9.8 MPa. The shear strengths of Bi0.5Sb1.5Te3/Cu joints bonded with the optimized conditions of the modified solid-liquid interdiffusion bonding process changed only slightly after long-term exposure at 473 K (200 °C) for 1000 hours.

Wide temperature range (T = 295 K and 770-1305 K) study of the kinetics of the reactions HCO + NO and HCO + NO2 using frequency modulation spectroscopy.

Science.gov (United States)

Dammeier, J; Colberg, M; Friedrichs, G

2007-08-21

The rate constants for , HCO + NO --> HNO + CO, and , HCO + NO(2)--> products, have been measured at temperatures between 770 K modulation (FM) absorption spectroscopy. Kinetic simulations based on a comprehensive reaction mechanism showed that the rate constants for the title reactions could be sensitively extracted from the measured HCO profiles. The determined high temperature rate constants are k(1)(769-1307 K) = (7.1 +/- 2.7) x 10(12) cm(3) mol(-1) s(-1) and k(2)(804-1186 K) = (3.3 +/- 1.8) x 10(13) cm(3) mol(-1) s(-1). The room temperature values were found to be in very good agreement with existing literature data and show that both reactions are essentially temperature independent. The weak temperature dependence of can be explained by the interplay of a dominating direct abstraction pathway and a complex-forming mechanism. Both pathways yield the products HNO + CO. In contrast to , no evidence for a significant contribution of a direct high temperature abstraction channel was found for . Here, the observed temperature independent overall rate constant can be described by a complex-forming mechanism with several product channels. Detailed information on the strongly temperature dependent channel branching ratios is provided. Moreover, the high temperature rate constant of , OH + (CHO)(2), has been determined to be k(7) approximately 1.1 x 10(13) cm(3) mol(-1) s(-1).

Strong composition-dependence on glass-forming ability in Ni-(Ti,Zr)-Si pseudo-ternary alloys

International Nuclear Information System (INIS)

Yang, H.; Wang, J.Q.; Li, Y.

2006-01-01

The glass formation in Ni-(Ti,Zr)-Si pseudo-ternary alloys was studied. For suction casting, by carefully adjusting the alloy composition and studying the microstructure changes, the best glass-forming alloy with a 2 mm diameter is pinpointed in a narrow composition region of 57.5-58.5 at.% Ni, 36.5-38.5 at.% (Ti + Zr) and 5-5.5 at.% Si. The main competing crystalline phases, identified by XRD and SEM, were Ni 10 (Zr,Ti) 7 , Ni(Ti,Zr) and an unidentified Si-containing phase. Our results indicate a clear need for monitoring the microstructure change in the cross section of the ingots to locate the best glass-forming alloys

Chemical and structural arrangement of the trigonal phase in GeSbTe thin films.

Science.gov (United States)

Mio, Antonio M; Privitera, Stefania M S; Bragaglia, Valeria; Arciprete, Fabrizio; Bongiorno, Corrado; Calarco, Raffaella; Rimini, Emanuele

2017-02-10

The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crystalline state strongly depend on their phase and on the associated degree of order. The switching of Ge atoms in superlattice structures with trigonal phase has been recently proposed to develop memories with reduced switching energy, in which two differently ordered crystalline phases are the logic states. A detailed knowledge of the stacking plane sequence, of the local composition and of the vacancy distribution is therefore crucial in order to understand the underlying mechanism of phase transformations in the crystalline state and to evaluate the retention properties. This information is provided, as reported in this paper, by scanning transmission electron microscopy analysis of polycrystalline and epitaxial Ge 2 Sb 2 Te 5 thin samples, using the Z-contrast high-angle annular dark field method. Electron diffraction clearly confirms the presence of compositional mixing with stacking blocks of 11, 9 or 7 planes corresponding to Ge 3 Sb 2 Te 6 , Ge 2 Sb 2 Te 5 , and GeSb 2 Te 4 , alloys respectively in the same trigonal phase. By increasing the degree of order (according to the annealing temperature, the growth condition, etc) the spread in the statistical distribution of the blocks reduces and the distribution of the atoms in the cation planes also changes from a homogenous Ge/Sb mixing towards a Sb-enrichment in the planes closest to the van der Waals gaps. Therefore we show that the trigonal phase of Ge 2 Sb 2 Te 5 , the most studied chalcogenide for phase-change memories, is actually obtained in different configurations depending on the distribution of the stacking blocks (7-9-11 planes) and on the atomic occupation (Ge/Sb) at the cation planes. These results give an insight in the factors determining the stability of the trigonal phase and suggest a dynamic path evolution that could have a key role in the switching mechanism of interfacial phase change memories

Room temperature synthesis of crystalline Sb2S3 for SnO2 ...

Indian Academy of Sciences (India)

attention of researchers owing to their low cost, simple fabrication technique and .... The typical SEM images of as-deposited Sb2S3 in figure 3a show the .... reduce back the excited Sb2S3 to its ground state and to set the system for next ...

Effect of Sb content on the thermoelectric properties of annealed CoSb_3 thin films deposited via RF co-sputtering

International Nuclear Information System (INIS)

Ahmed, Aziz; Han, Seungwoo

2017-01-01

Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb_3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb_2 phase possess the largest power factor. - Abstract: A series of CoSb_3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb_3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb_2 and CoSb_3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb_3 thin films. The CoSb_2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb_3 thin films. We report maximum power factor of 7.92 mW/m K"2 for the CoSb_2-containing mixed phase thin film and 1.26 mW/m K"2 for the stoichiometric CoSb_3 thin film.

Influence of Alkali Metal Substitution on the Phase Transition Behavior of CsGaQ2 (Q = S, Se

Directory of Open Access Journals (Sweden)

Daniel Friedrich

2017-12-01

Full Text Available The formation of solid solution series Cs1−xMxGaQ2-mC64 (M = K, Rb; Q = S, Se; x = 0–1 was studied by X-ray diffraction and spectroscopic methods, revealing a complete miscibility of CsGaQ2-mC64 with RbGaQ2 and KGaSe2, and a large miscibility gap with KGaS2. All solid solution members exhibit similar Raman spectra, indicating the covalent Ga-Q bonding character. The similar optical band gaps likewise further contribute to this conclusion. Up to a certain degree of substitution, these solid solutions undergo a phase transition similar to CsGaQ2-mC64. The influence of the substitution parameter x on phase transition process was investigated in situ using high-temperature X-ray powder diffraction experiments. Phase-pure solid solutions of the high-temperature polymorphs Cs1−xMxGaQ2-mC16 were obtained up to xmax(K = 0.1 and xmax(Rb = 0.3. The crystal structures of these new CsGaQ2-mC16 analogous high-temperature phases were refined from synchrotron diffraction data by Rietveld-refinement.

Formation of high-conductivity regions in SnO2-AOx (A - Ti4+, Zr4+, Sb3+, Sb5+) films exposed to ultraviolet radiation of H2

International Nuclear Information System (INIS)

Postovalova, G.G.; Roginskaya, Yu.E.; Zav'yalov, S.A.; Galyamov, B.Sh.; Klimasenko, N.L.

2000-01-01

Composition, structure and electron properties of SnO 2 films doped by Ti, Zr and Sb oxides were studied. The doped SnO 2 films were determined to contain nano-regions of SnO 2 base crystalline solid solutions and amorphous SnO 2 containing Sn 2+ or Sb 3+ ions and residing at the surface of crystallites or between them. These composition and structure peculiarities affect essentially both electron structure and electrical properties of films. Localized 5s-states of the conductivity range diffused boundary of amorphous SnO 2 partially filled with 5s-electrons of Sn 2+ or Sb 3+ ions serving as traps capture free electrons in the crystalline ranges and motivate high resistance of films [ru

Anomalous Phase Change in [(GeTe)2/(Sb2Te3)]20 Superlattice Observed by Coherent Phonon Spectroscopy

Science.gov (United States)

Makino, K.; Saito, Y.; Mitrofanov, K.; Tominaga, J.; Kolobov, A. V.; Nakano, T.; Fons, P.; Hase, M.

The temperature-dependent ultrafast coherent phonon dynamics of topological (GeTe)2/(Sb2Te3) super lattice phase change memory material was investigated. By comparing with Ge-Sb-Te alloy, a clear contrast suggesting the unique phase change behavior was found.

Antimony (Sb) sorption studies on zircaloy, carbon steel (CS) and magnetite coated CS (MCS) surfaces in aqueous medium at pH 10.2 and 280℃

International Nuclear Information System (INIS)

Keny, S.J.; Kumbhar, A.G.; Achary, S.N.; Basu, Saibal

2014-01-01

Antimony sorption studies on zircaloy, CS and magnetite coated carbon steel (MCS) at primary heat transport temperature (290℃) of pressurised heavy water reactor (PHWR) are of direct relevance in investigating Sb activity problem faced in Indian PHWRs. Sb impregnated PHT pump carbon bearing releases Sb to reactor core. This Sb activates, and redeposit on out-of-core surfaces and results in exposure and apparent high decontamination factors. This Sb is not amenable to normal decantation. The form and state of deposited Sb is not yet fully known. This works attempts for this

Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors

Energy Technology Data Exchange (ETDEWEB)

Sherchenkov, A. A. [National Research University of Electronic Technology (Russian Federation); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Lazarenko, P. I.; Babich, A. V. [National Research University of Electronic Technology (Russian Federation); Bogoslovskiy, N. A. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sagunova, I. V.; Redichev, E. N. [National Research University of Electronic Technology (Russian Federation)

2017-02-15

The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 5}, and GeSb{sub 4}Te{sub 7} are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb{sub 2}Te{sub 3}, which is important for targeted optimization of the phase change memory technology.

Molecular CsF 5 and CsF 2 +

KAUST Repository

Rogachev, Andrey Yu.; Miao, Mao-sheng; Merino, Gabriel; Hoffmann, Roald

2015-01-01

D5h star-like CsF5, formally isoelectronic with known XeF5− ion, is computed to be a local minimum on the potential energy surface of CsF5, surrounded by reasonably large activation energies for its exothermic decomposition to CsF+2 F2, or to CsF3 (three isomeric forms)+F2, or for rearrangement to a significantly more stable isomer, a classical Cs+ complex of F5−. Similarly the CsF2+ ion is computed to be metastable in two isomeric forms. In the more symmetrical structures of these molecules there is definite involvement in bonding of the formally core 5p levels of Cs.

Molecular CsF 5 and CsF 2 +

KAUST Repository

Rogachev, Andrey Yu.

2015-06-03

D5h star-like CsF5, formally isoelectronic with known XeF5− ion, is computed to be a local minimum on the potential energy surface of CsF5, surrounded by reasonably large activation energies for its exothermic decomposition to CsF+2 F2, or to CsF3 (three isomeric forms)+F2, or for rearrangement to a significantly more stable isomer, a classical Cs+ complex of F5−. Similarly the CsF2+ ion is computed to be metastable in two isomeric forms. In the more symmetrical structures of these molecules there is definite involvement in bonding of the formally core 5p levels of Cs.

Proton-stimulated Cl-HCO3 antiport by basolateral membrane vesicles of lobster hepatopancreas

International Nuclear Information System (INIS)

Ahearn, G.A.; Grover, M.L.; Tsuji, R.T.; Clay, L.P.

1987-01-01

Purified epithelial basolateral membrane vesicles were prepared from lobster hepatopancreas by sorbitol gradient centrifugation. Na+-K+-adenosinetriphosphatase, alkaline phosphatase, and cytochrome-c oxidase enzyme activities in the final membrane preparation were enriched 9.6-, 1.4-, and 0.4-fold, respectively, compared with their activities in the original tissue homogenate. Vesicle osmotic reactivity was demonstrated using 60-min equilibrium 36 Cl uptake experiments at a variety of transmembrane osmotic gradients. 36 Cl uptake into vesicles preloaded with HCO 3 was significantly greater than into vesicles lacking HCO 3 . This exchange process was stimulated by a transmembrane proton gradient (internal pH greater than external pH). Proton-gradient-dependent Cl-HCO 3 exchange was potential sensitive and stimulated by an electrically negative vesicle interior. 36 Cl influx (4-s exposures) into HCO 3 -loaded vesicles occurred by the combination of 4-acetamido-4'-isothiocyanatostilbene-2,2'-disulfonic acid sensitive, carrier-mediated transfer and apparent diffusion. 36 Cl influx was a hyperbolic function of both internal [HCO 3 ] and internal [Cl]. The two internal anions displayed a 100-fold difference in apparent affinity constants with HCO 3 being strongly preferred. 36 Cl influx was stimulated more by preloaded monovalent than by divalent anions. Na was an inhibitor of proton-dependent anion antiport, whereas K had no effect. A model for HCl-HCO 3 antiport is suggested that employs combined transmembrane concentration gradients of Cl and HCO 3 to power anion exchange and transfer protons against a concentration gradient

Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

2017-06-30

Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

Colloidal Sb2S3 Nanocrystals: Synthesis, Characterization and Fabrication of Solid-State Semiconductor Sensitized Solar Cell

KAUST Repository

Abulikemu, Mutalifu

2015-12-26

Inorganic nanocrystals composed of earth-abundant and non-toxic elements are crucial to fabricated sustainable photovoltaic devices in large scale. In this study, various-shaped and different phases of antimony sulfide nanocrystals, which is composed of non-scarce and non-toxic elements, are synthesized using hot-injection colloidal method. The effect of various synthetic parameters on the final morphology is explored. Also, foreign ion (Chlorine) effects on the morphology of Sb2S3 nanocrystals have been observed. Structural, optical and morphological properties of the nanocrystals were investigated, and Sb2S3 nanocrystal-based solid-state semiconductor-sensitized solar cells were fabricated using as-prepared nanocrystals. We achieved promising power conversion efficiencies of 1.48%.

Colloidal Sb2S3 Nanocrystals: Synthesis, Characterization and Fabrication of Solid-State Semiconductor Sensitized Solar Cell

KAUST Repository

Abulikemu, Mutalifu; Del Gobbo, Silvano; Anjum, Dalaver H.; Malik, Mohammad A; Bakr, Osman

2015-01-01

Inorganic nanocrystals composed of earth-abundant and non-toxic elements are crucial to fabricated sustainable photovoltaic devices in large scale. In this study, various-shaped and different phases of antimony sulfide nanocrystals, which is composed of non-scarce and non-toxic elements, are synthesized using hot-injection colloidal method. The effect of various synthetic parameters on the final morphology is explored. Also, foreign ion (Chlorine) effects on the morphology of Sb2S3 nanocrystals have been observed. Structural, optical and morphological properties of the nanocrystals were investigated, and Sb2S3 nanocrystal-based solid-state semiconductor-sensitized solar cells were fabricated using as-prepared nanocrystals. We achieved promising power conversion efficiencies of 1.48%.

AC plasma induced modifications in Sb{sub 2}S{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Calixto-Rodriguez, M; Martinez, H [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Castillo, F [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-543, 04510, Mexico D. F. (Mexico); Pena, Y [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, N.L (Mexico); Sanchez-Juarez, A, E-mail: ciro@nucleares.unam.m [Centro de Investigacion en EnergIa, Universidad Nacional Autonoma de Mexico, Privada Xochicalco s/n Col. Centro, Temixco, Morelos, C.P. 62580 (Mexico)

2010-01-01

Sb{sub 2}S{sub 3} thin films, deposited by the chemical bath deposition method, were treated with N{sub 2} plasma at 3.0 Torr during several minutes. The as-prepared Sb{sub 2}S{sub 3} thin films and films treated with N{sub 2} plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb{sub 2}S{sub 3}thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10{sup 9} to 10{sup 7} ({Omega}cm){sup -1} due to the annealing effect.

Buried homojunction in CdS/Sb2Se3 thin film photovoltaics generated by interfacial diffusion

Science.gov (United States)

Zhou, Ying; Li, Yang; Luo, Jiajun; Li, Dengbing; Liu, Xinsheng; Chen, Chao; Song, Huaibing; Ma, Jingyuan; Xue, Ding-Jiang; Yang, Bo; Tang, Jiang

2017-07-01

Antimony selenide (Sb2Se3) emerges as a very promising non-toxic absorber material for thin film photovoltaics, and most of the devices, either in the superstrate or substrate configuration, employed CdS as the buffer layer. Due to the peculiar one-dimensional crystal structure of Sb2Se3, severe interfacial diffusion would be expected. In this letter, the interfacial diffusion in CdS/Sb2Se3 photovoltaics was carefully characterized from a combined material and device physics characterization. The results indicated that a buried homojunction located deep inside the Sb2Se3 absorber layer due to Cd diffusion, instead of the apparent CdS/Sb2Se3 heterojunction, dictated charge separation and device performance in Sb2Se3 thin film solar cells. Cd diffusion converted p-type Sb2Se3 into n-type by introducing a donor level with an activation energy of 0.22 eV. Our studies deepen the understanding of Sb2Se3 photovoltaics and shed light on their further performance optimization.

Large-scale synthesis of double cauliflower-like Sb2S3 microcrystallines by hydrothermal method

International Nuclear Information System (INIS)

Wu, Lei; Xu, Hanyue; Han, Qiaofeng; Wang, Xin

2013-01-01

Highlights: •Highly uniform double cauliflower-like Sb 2 S 3 particles were synthesized via hydrothermal method. •Influence of reaction conditions on the morphology of the products was discussed. •Double cauliflower-like Sb 2 S 3 superstructures revealed broad spectrum response. -- Abstract: The double cauliflower-like Sb 2 S 3 superstructures assembled by nanorods were prepared using SbCl 3 and Na 2 S⋅9H 2 O as raw materials, dodecyltrimethylammonium bromide (DTAB, C 15 H 31 BrN) as surfactant under acidic condition at 180 °C for 30 h. The structure, morphology and composition of the product were characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and energy diffraction spectroscopy (EDS). The effect of reaction conditions including temperature, reaction time and surfactants on the sample morphology was discussed and a possible mechanism for the formation of cauliflower-like Sb 2 S 3 was proposed. The cauliflower-like Sb 2 S 3 microcrystallines revealed broad spectrum response, which may have a good application prospect in solar energy utilization and photoelectric conversion fields

Microstructure analyses and thermoelectric properties of Ag1−xPb18Sb1+yTe20

International Nuclear Information System (INIS)

Perlt, S.; Höche, Th.; Dadda, J.; Müller, E.; Bauer Pereira, P.; Hermann, R.; Sarahan, M.; Pippel, E.; Brydson, R.

2012-01-01

This study reports microstructural investigations of long-term annealed Ag 1−x Pb m Sb 1+y Te 2+m (m=18, x=y=0, hereinafter referred to as AgPb 18 SbTe 20 ) (Lead–Antimony–Silver–Tellurium, LAST-18) as well as of Ag 1−x Pb 18 Sb 1+y Te 20 , i.e. Ag-deficient and Sb-excess LAST-18 (x≠0,y≠0), respectively. Two different length scales are explored. The micrometer scale was evaluated by SEM to analyze the volume fraction and the number of secondary phases as well as the impact of processing parameters on the homogeneity of bulk samples. For AgPb 18 SbTe 20 , site-specific FIB liftout of TEM lamellae from thermoelectrically characterized samples was accomplished to investigate the structure on the nanometer scale. High-resolution TEM and energy-filtered TEM were performed to reveal shape and size distribution of nanoprecipitates, respectively. A hypothesis concerning the structure–property relationship is set out within the frame of a gradient annealing experiment. This study is completed by results dealing with inhomogeneities on the micrometer scale of Ag 1−x Pb 18 Sb 1+y Te 20 and its electronic properties. Highlights: ► SEM and TEM microstructure investigation of long-term annealed AgPb 18 SbTe 20 . ► SEM and thermoelectric studies on Ag 1−x Pb 18 Sb 1+y Te 20 . ► Discussion concerning structure–property relationship in long-term annealed AgPb 18 SbTe 20 . ► Correlation between Ag 1−x Pb 18 Sb 1+y Te 20 microscale structure and electronic properties.

Phase equilibria melt-solid in the systems Pb-InSb-CaSb and Pb-InCs-GaAs

International Nuclear Information System (INIS)

Grebenyuk, A.M.; Charykov, N.A.; Puchkov, L.V.

1992-01-01

Results of experimental investigation and thermodynamic calculation of fusibility curves of Pb-InSb-GaSb and Pb-InAs-GaAs thernary systems, which haven't been investigated earlier, are presented. Fusibility curves of Pb-InSb-GaSb and Pb-InAs-GaAs systems contain two crystallization fields: solid solutions of In x Ga 1-x Sb and Pb, In x Ga 1-x As and Pb. The latter fields are retained against Pb figurative point and conform to 582 K < T < 593 K crystallization temperatures

Solvothermal synthesis of Ni(HCO{sub 3}){sub 2}/graphene composites toward supercapacitors and the faradiac redox mechanism in KOH solution

Energy Technology Data Exchange (ETDEWEB)

Sun, Jinfeng [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100080 (China); Li, Zhangpeng [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Wang, Jinqing, E-mail: jqwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Wang, Zhaofeng [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Niu, Lengyuan; Gong, Peiwei [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100080 (China); Liu, Xiaohong; Wang, Honggang [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Yang, Shengrong, E-mail: sryang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2013-12-25

Highlights: •Ni(HCO{sub 3}){sub 2}/GS composites were prepared by a simple solvothermal method. •Ni(HCO{sub 3}){sub 2}/GS composites exhibited good supercapacitive performance. •Ni(HCO{sub 3}){sub 2}/GS2 presented the highest capacitance of 1200 F g{sup −1} at 4 A g{sup −1}. -- Abstract: In this work, a series of composites consisting of Ni(HCO{sub 3}){sub 2} and graphene nanosheets (GS) have been prepared by a facile solvothermal method, and then their application as electrode materials for supercapacitors has been investigated by cyclic voltammetry (CV) and galvanostatic charge–discharge tests. Morphological and structural analyses by field-emission scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy indicated that Ni(HCO{sub 3}){sub 2} particles deposited on the GS and formed a loosely packed microstructure, actualizing the successful combination of Ni(HCO{sub 3}){sub 2} particles with GS. Among the prepared composites, the sample of Ni(HCO{sub 3}){sub 2}/GS2 exhibited the highest capacitance of 1200 F g{sup −1} at a current density of 4 A g{sup −1}, illustrating that such composite is a promising candidate as electrode material for supercapacitors. Moreover, the Faradic redox mechanism of the Ni(HCO{sub 3}){sub 2}/GS composite was further studied in virtue of XRD analysis, which revealed that the Ni(HCO{sub 3}){sub 2} phase could be quickly transformed into Ni(OH){sub 2} phase by an electrochemically induced phase transformation process during the galvanostatic charge–discharge tests.

Electronic and magnetic properties of SmCrSb3 and GdCrSb3: A first principles study

International Nuclear Information System (INIS)

Sandeep; Ghimire, M.P.; Thapa, R.K.

2011-01-01

The density of states (DOS) and the magnetic moments of SmCrSb 3 and GdCrSb 3 have been studied by first principles full-potential linearized augmented plane wave (FP-LAPW) method based on density functional theory (DFT). For the exchange-correlation potential, the local-spin density approximations with correlation energy (LSDA+U) method have been used. Total and partial DOS have been computed using the WIEN2k code. DOS result shows the exchange-splittings of Cr-3d and rare-earth (R) 4f states electrons, which are responsible for the ground state ferromagnetic (FM) behavior of the systems. The FM behavior of these systems is strongly influenced by the average number of Cr-3d and Sm (Gd) 4f-electrons. The effective moment of SmCrSb 3 is found to be 7.07 μ B while for GdCrSb 3 it is 8.27 μ B . The Cr atom plays a significant role on the magnetic properties due to the hybridization between Cr-3d and Sb-5p states. - Highlights: → DOS and the magnetic moments of SmCrSb 3 and GdCrSb 3 are studied by full-FP-LAPW method. → Exchange splitting of eg and t2g of Cr-3d states and the rare-earth 4f state electrons are responsible for ground state ferromagnetism. → Rare-earth magnetic moments are greater than Cr moment indicating presence of 4f states.

Sb-Te Phase-change Materials under Nanoscale Confinement

Science.gov (United States)

Ihalawela, Chandrasiri A.

Size, speed and efficiency are the major challenges of next generation nonvolatile memory (NVM), and phase-change memory (PCM) has captured a great attention due to its promising features. The key for PCM is rapid and reversible switching between amorphous and crystalline phases with optical or electrical excitation. The structural transition is associated with significant contrast in material properties which can be utilized in optical (CD, DVD, BD) and electronic (PCRAM) memory applications. Importantly, both the functionality and the success of PCM technology significantly depend on the core material and its properties. So investigating PC materials is crucial for the development of PCM technology to realized enhanced solutions. In regards to PC materials, Sb-Te binary plays a significant role as a basis to the well-known Ge-Sb-Te system. Unlike the conventional deposition methods (sputtering, evaporation), electrochemical deposition method is used due to its multiple advantages, such as conformality, via filling capability, etc. First, the controllable synthesis of Sb-Te thin films was studied for a wide range of compositions using this novel deposition method. Secondly, the solid electrolytic nature of stoichiometric Sb2Te3 was studied with respect to precious metals. With the understanding of 2D thin film synthesis, Sb-Te 1D nanowires (18 - 220 nm) were synthesized using templated electrodeposition, where nanoporous anodic aluminum oxide (AAO) was used as a template for the growth of nanowires. In order to gain the controllability over the deposition in high aspect ratio structures, growth mechanisms of both the thin films and nanowires were investigated. Systematic understanding gained thorough previous studies helped to formulate the ultimate goal of this dissertation. In this dissertation, the main objective is to understand the size effect of PC materials on their phase transition properties. The reduction of effective memory cell size in conjunction with

The first quinary rare earth thiophosphates. Cs{sub 5}Ln{sub 3}X{sub 3}(P{sub 2}S{sub 6}){sub 2}(PS{sub 4}) (Ln = La, Ce, X = Br, Cl) and the quasi-quaternary Cs{sub 10}Y{sub 4}Cl{sub 10}(P{sub 2}S{sub 6}){sub 3}

Energy Technology Data Exchange (ETDEWEB)

Schoop, Leslie Mareike; Eger, Roland; Nuss, Juergen; Pielnhofer, Florian [Max Planck Institute for Solid State Research, Stuttgart (Germany); Lotsch, Bettina Valeska [Max Planck Institute for Solid State Research, Stuttgart (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience, Muenchen (Germany)

2017-12-13

We report the first examples of quinary rare earth thiophosphates with a fully ordered cation and anion distribution, Cs{sub 5}Ln{sub 3}X{sub 3}(P{sub 2}S{sub 6}){sub 2}(PS{sub 4}), (Ln = La, Ce and X = Br, Cl) as well as the quasi-quaternary Cs{sub 10}Y{sub 4}Cl{sub 10}(P{sub 2}S{sub 6}){sub 3}. These four new compounds crystallize in three different, unknown structure types. The yellowish, transparent, brittle Cs{sub 5}Ce{sub 3}Br{sub 3}(P{sub 2}S{sub 6}){sub 2}(PS{sub 4}) crystallizes in the orthorhombic space group Pnma (no. 62) with a = 13.276(3), b = 14.891(3), c = 19.593(4) Aa, and V = 3873(1) Aa{sup 3} in a novel structure type. Colorless crystals of Cs{sub 5}La{sub 3}Br{sub 3}(P{sub 2}S{sub 6}){sub 2}(PS{sub 4}) and Cs{sub 5}La{sub 3}Cl{sub 3}(P{sub 2}S{sub 6}){sub 2}(PS{sub 4}) are isotypic and were obtained in the monoclinic space group P2{sub 1}/m (no. 11) with a = 9.715(2), b = 14.310(3), c = 13.685(3) Aa, β = 100.16(3) and V = 1873(1) Aa{sup 3} and a = 9.513(2), b = 14.182(3), c = 13.699(3) Aa, β = 99.39(3) and V = 1823(1) Aa{sup 3}, respectively. Both structures contain isolated hexathiohypodiphosphate(IV) [P{sub 2}S{sub 6}]{sup 4-} and thiophosphate [PS{sub 4}]{sup 3-} units that are arranged alternately in layers. Cs{sub 10}Y{sub 4}Cl{sub 10}(P{sub 2}S{sub 6}){sub 3} crystallizes in colorless transparent platelets in the orthorhombic space group Pnnm (no. 58) with a = 13.153(3), b = 28.964(6), c = 7.780(2) Aa, and V = 2964(1) Aa{sup 3}. The structure is composed of isolated [P{sub 4/2}S{sub 6}]{sup 4-} octahedra containing four half occupied P positions surrounded octahedrally by sulfur. We show with Raman scattering that this disordered thiophosphate anion shows a Raman spectrum that is distinct from spectra published for other literature-known thiophosphate anions. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Crystal structure, hydrogen bonding, and sup 8 sup 1 Br NQR of low-temperature phase of 4-aminopyridinium tetrabromoantimonate (3)

CERN Document Server

Hashimoto, M; Fuess, H; Svoboda, I; Ehrenberg, H

2003-01-01

The crystal structure of the low-temperature phase (LTP) of the title compound was determined at 220 K (monoclinic, P2 sub 1 sub / sub c). The 4-aminopyridinium cations (4-NH sub 2 C sub 5 H sub 4 NH sup +) were found to be ordered in LTP, while being severely disordered in the room-temperature phase (monoclinic, C2/c). The tetrabromoantimonate anions (SbBr sub 4 sup -) were incorporated into the infinite polyanion chains of irregular SbBr sub 6 octahedra with two-edges sharing. The trans-Br-Sb-Br moiety in the SbBr sub 4 sup - anion was approximately symmetric differing from the asymmetric Br-Sb centre dot centre dot centre dot Br moiety found in LTP of pyridinium tetrabromoantimonate (3). The N-H moieties in both of the pyridine ring and the amino (-NH sub 2) group participate in the formation of N-H centre dot centre dot centre dot Br hydrogen bonds. It was shown that the sup 8 sup 1 Br NQR spectrum of LTP is closely related to the anion structure and the hydrogen bonds. The distinctive anion structures, a...

Nanocrystals of the quaternary thermoelectric materials: AgPb{sub m}SbTe{sub m+2}(m=1-18): Phase-segregated or solid solutions?

Energy Technology Data Exchange (ETDEWEB)

Arachchige, Indika U [Department of Chemistry, Northwestern University Evanston, IL (United States); Wu, Jinsong; Dravid, Vinayak P [Department of Materials Science and Engineering, Northwestern University Evanston, IL (United States); Kanatzidis, Mercouri G [Department of Chemistry, Northwestern University Evanston, IL (United States); Material Science Division, Argonne National Laboratory Argonne, IL (United States)

2008-10-02

Facile synthesis of a series of thermoelectrically relevant AgPb{sub m}SbTe{sub m+2}(m=1-18) nanoparticles is carried out by using a colloidal synthetic route. As-synthesized nanocrystals are spherical in geometry and adopt a cubic NaCl-type structure. These quaternary nanocrystals behave as solid solutions at room temperature and tend to phase separate into AgSbTe{sub 2} and PbTe upon annealing at moderately high temperature. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

Hole-dominated transport in InSb nanowires grown on high-quality InSb films

Science.gov (United States)

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

2016-12-01

We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

Influence of Si and N additions on structure and phase stability of Ge2Sb2Te5 thin films

International Nuclear Information System (INIS)

Koelpin, Helmut; Music, Denis; Mykhaylonka, Ruslan; Schneider, Jochen M; Laptyeva, Galyna; Ghadimi, Reza; Richter, Silvia; Mayer, Joachim; Merget, Florian

2009-01-01

The influence of Si and N in Ge 2 Sb 2 Te 5 (space group Fm3-barm) on structure and phase stability thereof was studied experimentally by thin film growth and characterization as well as theoretically by ab initio calculations. It was found that Si and N most probably accumulate in the amorphous matrix embedding Ge 2 Sb 2 Te 5 grains. The incorporation of Si and N in these samples causes an increase of the crystallization temperature and the formation of finer grains. N is more efficient in increasing the crystallization temperature and in reducing the grain size than Si which can be understood based on the bonding analysis. The incorporation of both Si and N in Ge 2 Sb 2 Te 5 is energetically unfavourable, leading to finer grains and larger crystallization temperatures. While in the case of Si additions no significant changes in bonding are observed, N additions appear to enable the formation of strong Te-N bonds in the amorphous matrix, which are shown to be almost twice as strong as the strongest bonds in unalloyed Ge 2 Sb 2 Te 5 .

Abnormal duodenal [HCO3-] following secretin stimulation develops sooner than endocrine insufficiency in minimal change chronic pancreatitis.

Science.gov (United States)

Pelley, Joshua R; Gordon, Stuart R; Gardner, Timothy B

2012-04-01

Direct pancreatic function tests (PFTs) are often used to diagnose chronic pancreatitis (CP). We aimed to determine the temporal relationship between an abnormal PFT result, cross-sectional imaging, and clinical symptoms. All patients referred for endoscopic ultrasound (EUS) and PFT for suspected CP at our medical center from 2008 to 2010 were included. Each subject underwent EUS and PFT on the same day using secretin stimulation. Seventeen patients had duodenal HCO3 values of less than 80 mEq/L and were labeled as abnormal; the 25 other patients had at least 1 duodenal HCO3 values of 80 mEq/L or greater. Patients with abnormal PFTs had more parenchymal (2.0 vs 0.92, P = 0.012), ductal (1.18 vs 0.6, P = 0.036), and total features (3.18 vs 1.52, P = 0.009) than those with normal PFTs on EUS examination. There was no difference in regard to the frequency of abnormal CT scans (25% vs 15%, P = 0.139), diarrhea (67% vs 60%, P = 0.463), fat-soluble vitamin deficiency (33% vs 26%, P = 0.315), or diabetes (10% vs 4%, P = 0.066). Patients with equivocal imaging and abnormally low duodenal HCO3 have more EUS features of CP than do patients with normal duodenal HCO3 values, suggesting that low duodenal HCO3 values are among the first measurable abnormalities in CP.

Magnetorresistência colossal em La5/8-yPr yCa3/8MnO3 Magnetoresistance in La5/8-yPr yCa3/8MnO3

Directory of Open Access Journals (Sweden)

S. H. Masunaga

2007-09-01

Full Text Available Amostras policristalinas de La5/8-yPr yCa3/8MnO3, 0 0,35 também mostram uma transição para o estado de ordenamento de carga/orbital T OC. Uma análise das medidas de ro(T, H sugere a coexistência de pelo menos duas fases distintas nesses materiais: uma ferromagnética-metálica FMM e uma segunda, com ordenamento de carga/orbital e comportamento isolante OCI. Os resultados também permitem concluir que as frações volumétricas dessas fases podem ser manipuladas, alterando-se parâmetros termodinâmicos como T e H. A magnetorresistência MR(T, determinada através das medidas de ro(T, H, foi observada ocorrer em uma larga faixa de temperatura e em todas as amostras pertencentes à série. Amostras ricas em Pr (y > 0,35 revelam um efeito de magnetorresistência colossal amplificado devido à coexistência e competição das FMM e OCI cujas frações volumétricas podem ser alteradas via mudança da temperatura e aplicação de um campo magnético externo.Polycrystalline samples of La5/8-yPr yCa3/8MnO3; 0 0.35 a transition to a charge and orbital-ordered state was also observed. The rho(T, H data analyses suggest the coexistence of at least two ordered phases in these samples: a ferromagnetic metallic phase FMM and a charge and orbital-ordered insulating COI phase.The data also indicate that the volume fraction of these phases can be changed by the variation of thermodynamic parameters like temperature T and magnetic field H. The magnetoresistance MR(T determined from rho(T, H data were observed in a large temperature range for all samples. In addition, samples with y > 0.35 were found to display a pronounced colossal magnetoresistance effect due to a severe competition between FMM and COI coexisting phases.

A missense mutation in ALDH18A1, encoding Delta1-pyrroline-5-carboxylate synthase (P5CS), causes an autosomal recessive neurocutaneous syndrome.

Science.gov (United States)

Bicknell, Louise S; Pitt, James; Aftimos, Salim; Ramadas, Ram; Maw, Marion A; Robertson, Stephen P

2008-10-01

There are several rare syndromes combining wrinkled, redundant skin and neurological abnormalities. Although phenotypic overlap between conditions has suggested that some might be allelic to one another, the aetiology for many of them remains unknown. A consanguineous New Zealand Maori family has been characterised that segregates an autosomal recessive connective tissue disorder (joint dislocations, lax skin) associated with neurological abnormalities (severe global developmental delay, choreoathetosis) without metabolic abnormalities in four affected children. A genome-screen performed under a hypothesis of homozygosity by descent for an ancestral mutation, identified a locus at 10q23 (Z = 3.63). One gene within the candidate interval, ALDH18A1, encoding Delta1-pyrroline-5-carboxylate synthase (P5CS), was considered a plausible disease gene since a missense mutation had previously been shown to cause progressive neurodegeneration, cataracts, skin laxity, joint dislocations and metabolic derangement in a consanguineous Algerian family. A missense mutation, 2350C>T, was identified in ALDH18A1, which predicts the substitution H784Y. H784 is invariant across all phyla and lies within a previously unrecognised, conserved C-terminal motif in P5CS. In an in vivo assay of flux through this metabolic pathway using dermal fibroblasts obtained from an affected individual, proline and ornithine biosynthetic activity of P5CS was not affected by the H784Y substitution. These data suggest that P5CS may possess additional uncharacterised functions that affect connective tissue and central nervous system function.

Study on the origin of pressure-induced superconductivity of Cs3C60

International Nuclear Information System (INIS)

Fujiki, S.; Kubozono, Y.; Takabayashi, Y.; Kashino, S.; Kobayashi, M.; Ishii, K.; Suematsu, H.

2001-01-01

Physical properties of bco phase of Cs 3+α C 60 (α=0.0-1.0) and A15 phase of Cs 3 C 60 are studied by X-ray diffraction, ESR, AC susceptibility, resistivity and Raman. The ESR of Cs 300(6) C 60 showed a broad peak of ∼380 G due to conduction electron, while no broad peak was observed in the ESR of bco Cs 3+α C 60 (α≠0.0) and A15 phase. This shows that only bco phase of Cs 3 C 60 is metallic. The AC susceptibility of bco phase of Cs 3.2(3) C 60 and Cs 3.5(1) C 60 showed no superconducting transition above 1.3 K even under high pressure, and the resistivity was 0.52 Ω cm for both samples

Photo-induced effects of the virgin Ge_2_4_._9Sb_1_1_._6S_6_3_._5 film

International Nuclear Information System (INIS)

Knotek, P.; Tichy, L.; Kutalek, P.

2015-01-01

Amorphous Ge_2_4_._9Sb_1_1_._6S_6_3_._5 film was prepared through thermal evaporation. A blue shift of the optical band gap by approximately 100 meV was observed as a result of self-bleaching process of protected film aged for two years. The magnitude of the light induced blue shift of the optical band of the virgin film is primarily dependent on the light penetration depth and on the light intensity. The kinetics of photo-bleaching follows the stretch exponential function with a formal rate of bleaching depending on the light intensity while the saturated state is independent from the light intensity. The far infrared spectra indicate that ageing, illumination by over-band gap-photons and annealing of the virgin film are mainly accompanied by the film network ordering. Illumination by UV light photons led to a blue shift accompanied by the significant oxidation as evidenced by the results of the far infrared spectra and the energy dispersive analysis. - Highlights: • “Giant” photo-induced effects in virgin Ge_2_4_._9Sb_1_1_._6S_6_3_._5 film • The role of the film thickness, the wavelengths and intensity of excitation photons • The changes of the photo-sensitivity due to the self-ageing process • The high-intensity illumination (> 10 W/cm"2) led to the different processes

(2S,7S-10-Ethyl-1,8,10,12-tetraazatetracyclo[8.3.1.18,12.02,7]pentadecan-10-ium iodide

Directory of Open Access Journals (Sweden)

Augusto Rivera

2012-10-01

Full Text Available The title chiral quaternary ammonium salt, C13H25N4+·I−, was synthesized through the Menschutkin reaction between the cage aminal (2S,7S-1,8,10,12-tetraazatetracyclo[8.3.1.18,12.02,7]pentadecane and ethyl iodide. The quaternization occurred regioselectively on the nitrogen with major sp3 character. The crystal structure consists of anions and cations separated by normal distances. Ions are not linked through C—H...I hydrogen bonds.

Methane explosion suppression characteristics based on the NaHCO3/red-mud composite powders with core-shell structure.

Science.gov (United States)

Wang, Yan; Cheng, Yi-Shen; Yu, Ming-Gao; Li, Yao; Cao, Jian-Liang; Zheng, Li-Gang; Yi, Hong-Wei

2017-08-05

The NaHCO 3 /red-mud (RM) composite powders were successfully prepared by the solvent-anti-solvent method for methane explosion suppression. The RM was used as a carrier, and the NaHCO 3 was used as a loaded inhibitor. The NaHCO 3 /RM composite powders showed a special core-shell structure and excellent endothermic performance. The suppression properties of NaHCO 3 /RM composite for 9.5% CH 4 explosion were tested in a 20L spherical explosion vessel and a 5L Perspex duct. The results showed that the NaHCO 3 /RM composite powders displayed a much better suppression property than the pure RM or NaHCO 3 powders. The loading amount of NaHCO 3 has an intensive influence on the inhibition property of NaHCO 3 /RM composite powders. The best loaded content of NaHCO 3 is 35%. It exhibited significant inhibitory effect that the explosion max-pressure declined 44.9%, the max-pressure rise rate declined 96.3% and the pressure peak time delayed 366.7%, respectively. Copyright © 2017 Elsevier B.V. All rights reserved.

A Summary of Rheology Data For SB3 and SB2/3 Blend Simulant Savannah River Site Wastes

International Nuclear Information System (INIS)

KOOPMAN, DAVIDC.

2004-01-01

total solids.The slurry pH seemed to be having a significant effect on the rheological variations within a set of similar simulant samples. The most viscous slurry in a set often had an intermediate pH in the 5-8 range. Rheological differences were seen as a function of wash endpoint with simulants. The Case 7d SB2/3SME product was more viscous than the less-washed Case 6b SME product. The more-washed SB3 simulant SME products that started at 20,000 mg/kg sludge nitrite were more viscous than the less washed SB3 simulant SME products that started at 27,000 mg/kg sludge nitrite

The crystal structure of ferdowsiite Ag8Sb4(As,Sb)4S16 and its relations to other ABX2 (A=Ag; B=As,Sb,Bi; X=S,Se) structures

DEFF Research Database (Denmark)

Makovicky, Emil; Topa, Dan

2014-01-01

arsenic. The crystal structure of ferdowsiite is a superstructure of a PbS like motif. The {100} planes of the PbS-like substructure are the (105̅), (301) and (010) planes in terms of the ferdowsiite lattice. The structure contains zig-zag chains of Sb1 connected via short Sb-S bonds and flanked by (Sb...

Eu{sub 7}Ga{sub 6}Sb{sub 8}: A Zintl phase with Ga-Ga bonds and polymeric gallium antimonide chains

Energy Technology Data Exchange (ETDEWEB)

Park, S -M; Kim, S -J; Kanatzidis, M G

2004-08-01

The Zintl phase Eu{sub 7}Ga{sub 6}Sb{sub 8} was obtained from a direct element combination reaction at 900 deg. C. It crystallizes in the orthorhombic space group Pbca (No. 61) with a=15.6470(17) A, b=17.2876(19) A, c=17.9200(19) A, and Z=8. In Eu{sub 7}Ga{sub 6}Sb{sub 8}, the anionic framework forms infinite chains of [Ga{sub 6}Sb{sub 8}]{sup 14-} which are arranged side by side to make a sheet-like arrangement but without linking. The sheets of chains are separated by Eu{sup 2+} atoms and also within the sheet, Eu{sup 2+} atoms fill the spaces between two chains. The chain is made up of homoatomic tetramers (Ga{sub 4}){sup 6+} and dimers (Ga{sub 2}){sup 4+} connected by Sb atoms. The compound is a narrow band-gap semiconductor with E{sub g}{approx}0.6 eV and satisfies the classical Zintl concept. Extended Hueckel band structure calculations confirm that the material is a semiconductor and suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Magnetic susceptibility measurements for Eu{sub 7}Ga{sub 6}Sb{sub 8} show that the Eu atoms are divalent and the compound has an antiferromagnetic transition at 9 K.

In situ investigations on the formation and decomposition of KSiH{sub 3} and CsSiH{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Auer, Henry; Kohlmann, Holger [Department of Inorganic Chemistry, Leipzig University (Germany)

2017-08-03

The system KSi-KSiH{sub 3} stores 4.3 wt % of hydrogen and shows a very good reversibility at mild conditions of 0.1 MPa hydrogen pressure and 414 K.[] We followed the reaction pathways of the hydrogenation reactions of KSi and its higher homologue CsSi by in situ methods in order to check for possible intermediate hydrides. In situ diffraction at temperatures up to 500 K and gas pressures up to 5.0 MPa hydrogen gas for X-ray and deuterium gas for neutron reveal that both KSi and CsSi react in one step to the hydrides KSiH{sub 3} and CsSiH{sub 3} and the respective deuterides. Neither do the Zintl phases dissolve hydrogen (deuterium), nor do the hydrides (deuterides) show any signs for non-stoichiometry, i.e. all phases involved in the formation are line phases. Heating to temperatures above 500 K shows that at 5.0 MPa hydrogen pressure only the reaction 2CsSi + 3H{sub 2} = 2CsSiH{sub 3} is reversible. Under these conditions, KSiH{sub 3} decomposes to a clathrate and potassium hydride according to 46KSiH{sub 3} = K{sub 8}Si{sub 46} + 38KH + 50H{sub 2}. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Atomic structure determination of InSb(100)c(4x4) and c(8x2)phases by X-ray photoelectron diffraction

International Nuclear Information System (INIS)

Carvalho, V.E. de; Soares, E.A.; Magalhaes, M.R.P.; Paniago, R.; Siervo, A. de; Landers, R.

2004-01-01

Full text: The (100) surfaces of III-V compound semiconductors exhibit a variety of surface reconstructions that have attracted a lot of attention because of their importance in both homo epitaxial and heteroepitaxial growth. In the special case of the narrow bandgap InSb compound semiconductor its potential application in high-speed electronic and optoelectronic devices has encourage many studies of its (100) surface atomic structure. Among the reconstructions presented by the InSb(100) surface two of them have received more attention, that is, the observed well-ordered In-rich c(8x2) and Sb terminated c(4x4) surfaces. The c(8x2) structure can be obtained by exposing the surface to low energy ion bombardment and annealing, whereas the c(4x4) structure involves the chemisorption of Sb onto an already Sb-terminated surface. These two structures have been studied mainly by scanning tunneling microscopy (STM) and surface X-ray diffraction (SXRD) techniques and all the proposed models are based on the occurrence of group III (and/or V) blocks of dimmers occupying sites on the top or at subsurface layer. However, there are still difficulties in determining either the exact number of atoms in each dimmer or the number of dimmers in each block. With the goal of getting a better structure determination of the InSb(100) surface phases a photoelectron diffraction experiment (XPD) was carried out at LNLS where synchrotron and Al-K α radiations have been used. In the present work, the experimental and preliminary results of structure determination for both In Sn(100)c(8x2) and InSb(100)c(4x4) phases will be presented and discussed. (author)

Effects of Ge- and Sb-doping and annealing on the tunable bandgaps of SnS films

Energy Technology Data Exchange (ETDEWEB)

Hsu, Hsuan-Tai; Chiang, Ming-Hung; Huang, Chen-Hao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Fu, Yaw-Shyan [Department of Greenergy, National University of Tainan, Tainan 700, Taiwan (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)

2015-06-01

SnS, Ge- and Sb-doped SnS films with single orthorhombic SnS phase were fabricated via solvothermal routes and subsequent spin-coating, respectively. The substitution solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. The bandgaps of Ge- and Sb-doped SnS films can be tuned in the ranges of 1.25–1.35 and 1.30–1.39 eV, respectively. The possible mechanisms for the tunable bandgaps of Ge- and Sb-doped SnS films are discussed. For the Ge- and Sb-doped SnS films subjected to annealing at 200–350 °C in N{sub 2}, the bandgaps of 200 °C-annealed films remain unchanged, while those of 300 °C- and 350 °C-annealed films decrease with the annealing temperature because of the evaporation of Ge and Sb respectively. - Highlights: • Ge- and Sb-doped SnS films were fabricated via spin-coating. • The solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. • The bandgaps of SnS films can be tuned by Ge and Sb doping respectively. • Annealing above 300 °C reduces the bandgaps of Ge- and Sb-doped SnS films.

Reduction of thermal conductivity in YxSb2-xTe3 for phase change memory

Science.gov (United States)

Li, Zhen; Miao, Naihua; Zhou, Jian; Xu, Huibin; Sun, Zhimei

2017-11-01

Thermal conductivity (κ) is one of the fundamental properties of materials for phase change memory (PCM) application, as the set/reset processes strongly depend upon heat dissipation and transport. The κ of phase change materials in both amorphous and crystalline phases should be quite small, because it determines how energy-efficient the PCM device is during programming. At a high temperature, the electronic thermal conductivity (κe) is always notable for semiconductors, which is still lacking for antimony telluride under doping in the literature as far as we know. In this paper, using density functional theory and Boltzmann transport equations, we report calculations of lattice thermal conductivity κL and electronic thermal conductivity κe of the yttrium doped antimony telluride. We show that the average value of thermal conductivity decreases from ˜2.5 W m-1 K-1 for Sb2Te3 to ˜1.5 W m-1 K-1 for Y0.167Sb1.833Te3. This can be attributed to the reduced κL and κe, especially the κe at high temperature (near melting point). We further point out that the increased effective mass of carriers and the flat valance band edge are responsible for the decrease of κe. The reduced thermal conductivity is highly desirable for the decrease of heat dissipation and transport in PCM operations, which can increase the density of memory and reduce energy consumption.

Photoelectrochemical properties of hierarchical ZnO micro-nanostructure sensitized with Sb2S3 nanoparticles

Directory of Open Access Journals (Sweden)

Zhimin GUO

2016-02-01

Full Text Available By using electrochemical deposition method, and assisted with additions of PEG-400 and EDA, well-aligned ZnO nanorods and hierarchical ZnO micro-nanostructure are fabricated directly on indium doped tin oxide coated conducting glass (ITO substrate. The shell-core Sb2S3/ZnO nanorod structure and the shell-core hierarchical Sb2S3/ZnO micro-nanostructure are prepared by chemical bath deposition method. SEM, XRD, UV-Vis and photocurrent test are used to characterize the morphology, nanostructures and their photoelectrochemical properties. The studies show that the photocurrent on the array membranes with shell-core hierarchical Sb2S3/ZnO micro-nanostructure is apparently higher than that with shell-core Sb2S3/ZnO nanorods array.

Phase III Randomized Study of SB5, an Adalimumab Biosimilar, Versus Reference Adalimumab in Patients With Moderate‐to‐Severe Rheumatoid Arthritis

OpenAIRE

Weinblatt, Michael E.; Baranauskaite, Asta; Niebrzydowski, Jaroslaw; Dokoupilova, Eva; Zielinska, Agnieszka; Jaworski, Janusz; Racewicz, Artur; Pileckyte, Margarita; Jedrychowicz‐Rosiak, Krystyna; Cheong, Soo Yeon; Ghil, Jeehoon; Sokolovic, S.; Mekic, M.; Prodanovic, N.; Gajic, B.

2017-01-01

Objective SB5 is a biosimilar agent for adalimumab (ADA). The aim of this study was to evaluate the efficacy, pharmacokinetics (PK), safety, and immunogenicity of SB5 in comparison with reference ADA in patients with rheumatoid arthritis (RA). Methods In this phase III, randomized, double‐blind, parallel‐group study, patients with moderately to severely active RA despite treatment with methotrexate were randomized 1:1 to receive SB5 or reference ADA at a dosage of 40 mg subcutaneously every o...

The novel superacid systems HSO3F-Nb(SO3F)5 and HSO3F-Ta(SO3F)5

International Nuclear Information System (INIS)

Cicha, W.V.; Aubke, F.

1989-01-01

The in situ oxidation of niobium and tantalum in HSO 3 F by bis(fluorosulfuryl) peroxide, S 2 O 6 F 2 , results in the formation of solvated Lewis acids M(SO 3 F) 5 , M = Nb or Ta. Both solutes behave as moderately strong, monoprotonic acids, based on electrical conductivity measurements over the concentration range 0-0.05 m and on conductometric titrations against KSO 3 F. These measurements suggest a general order of acidity, Au(SO 3 F) 3 > Ta(SO 3 F) 5 ≥ SbF 5 > Nb(SO 3 F) 5 > NbF 5 , all giving rise to monoprotonic acids. Supporting evidence comes from 1 H, 19 F, and 93 Nb NMR spectroscopy and the successful isolation and characterization of complexes of the type Cs n [M(SO 3 F) 5+n ], with M = Nb or Ta and n = 1 or 2, from these solutions

Hydrates of the alkali trioxidomonosulfidomolybdates and -tungstates. K{sub 2}[(Mo/W)O{sub 3}S] . 1.5 H{sub 2}O and (Rb/Cs){sub 2}[(Mo/W)O{sub 3}S] . H{sub 2}O

Energy Technology Data Exchange (ETDEWEB)

Lehner, Anna J.; Braitsch, Milan; Roehr, Caroline [Freiburg Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

2012-11-01

The trioxidomonosulfidomolybdate and -tungstate anions [(Mo/W)O{sub 3}S]{sup 2-} are the first products formed when passing H{sub 2}S gas through a solution of the oxidometalates. Their potassium, rubidium and cesium salt hydrates form as crystalline precipitates from these solutions depending on pH, the polarity of the solvent, educt concentrations and temperature. The structures of the sesqui- (K) and mono- (Rb, Cs) hydrates have been determined by means of X-ray single crystal diffraction data. The potassium sesquihydrates K{sub 2}[(Mo/W)O{sub 3}S] . 1.5 H{sub 2}O are isotypic and crystallize with a new structure type (monoclinic, space group C2/c, M = Mo/W: a = 987.0(2)/993.13(11), b = 831.75(14)/831.10(11), c = 1868.9(4)/1865.2(2) pm, {beta} = 99.34(2)/99.153(8) , R1 = 0.0352/0.0390). In the crystal structure the [(Mo/W)O{sub 3}S]{sup 2-} anions are connected via hydrogen bonds to form columns along the c direction. Channels containing only water molecules run along the [101] direction. The dehydration process proceeds in a topotactic reaction between 60 to 95 C and yields crystals of the anhydrous salts K{sub 2}[(Mo/W)O{sub 3}S]. The two different K+ cations exhibit a 5 + 3 and 5 + 2 O/S coordination. The heavier alkali metal cations form the four monohydrates (Rb/Cs){sub 2}[(Mo/W)O{sub 3}S] . H{sub 2}O (trigonal rhombohedral, space group R anti 3m) with lattice parameters for the Rb/Cs molybdates of a = 621.17(6)/624.62(10), c = 3377.9(4)/3388.6(8) pm (R1 = 0.0505/0.0734) and the tungstates of a = 642.80(3)/643.3(4), c = 3532.8(3)/3566(4) pm (R1 = 0.0348/0.0660). In the structures the 3m symmetrical tetrahedra are arranged to form double layers in such a way, that the O{sub 3} bases of the tetrahedra are pointing towards each other in a staggered conformation. These double layers are stacked in the c direction in a rhombohedral sequence. In these hydrates, there are no distinct hydrogen bonds. Instead, partially disordered pairs of H{sub 2}O molecules are

Specific heat characteristics of Ce70Ga8.5Cu18.5Ni3 metallic glass at low temperatures

Science.gov (United States)

Liu, Rentao; Zhong, Langxiang; Zhang, Bo

2018-03-01

Specific heat behaviors have been studied in Ce70Ga8.5Cu18.5Ni3 bulk metallic glass (BMG) from 2 K to 50 K. The low-temperature specific heat of the Ce-based metallic glass is a combined action of the Fermi liquids term, Debye oscillator term, and Einstein oscillator term as well as excess term. We also observed an intense boson peak around 15 K and attributed it to a harmonic localized Einstein mode influenced by the dense-packed atomic cluster structure. It is also demonstrated that Ce70Ga8.5Cu18.5Ni3 BMG belongs to the strongly correlated heavy-fermion system with a great electron specific heat coefficient and a high Wilson ratio. It exhibits a typical Fermi-Liquid feature when the temperature is above 10 K, while it exhibits a Non-Fermi-Liquid feature when the temperature is below 3.5 K.

5-Gb/s 0.18-{mu}m CMOS 2:1 multiplexer with integrated clock extraction

Energy Technology Data Exchange (ETDEWEB)

Zhang Changchun; Wang Zhigong; Shi Si; Miao Peng [Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China); Tian Ling, E-mail: zgwang@seu.edu.c [School of Science and Engineering, Southeast University, Nanjing 210096 (China)

2009-09-15

A 5-Gb/s 2:1 MUX (multiplexer) with an on-chip integrated clock extraction circuit which possesses the function of automatic phase alignment (APA), has been designed and fabricated in SMIC's 0.18 {mu}m CMOS technology. The chip area is 670 x 780 {mu}m{sup 2}. At a single supply voltage of 1.8 V, the total power consumption is 112 mW with an input sensitivity of less than 50 mV and an output single-ended swing of above 300 mV. The measurement results show that the IC can work reliably at any input data rate between 1.8 and 2.6 Gb/s with no need for external components, reference clock, or phase alignment between data and clock. It can be used in a parallel optic-fiber data interconnecting system.

Study of Sb2S3 thin films deposited by SILAR method

Science.gov (United States)

Deshpande, M. P.; Chauhan, Krishna; Patel, Kiran N.; Rajput, Piyush; Bhoi, Hiteshkumar R.; Chaki, S. H.

2018-05-01

In the present work, we deposited Sb2S3 thin films on glass slide by successive ionic layer adsorption and reaction (SILAR) technique with different time cycles. From EDAX, we could observe that the films were non-stoichiometric and contained few elements from glass slide. X-ray diffraction has shown that these films are orthorhombic in structure from where we have calculated the lattice parameter and crystallize size. SEM images shows that SILAR synthesized Sb2S3 thin films are homogenous and well distributed indicating the formation of uniform thin films at lower concentration. The room temperature Raman spectra of Sb2S3 thin films showed sharp peaks at 250 cm‑1 and 300 cm‑1 for all cases. Room temperature photoluminescence emission spectrum shows broad bands over 430–480 nm range with strong blue emission peak centered at same wavelength of 460 nm (2.70 eV) for all cases.

Investigations on the electrodeposition behaviors of Bi0.5Sb1.5Te3 thin film from nitric acid baths

International Nuclear Information System (INIS)

Li Feihui; Huang Qinghua; Wang Wei

2009-01-01

The electrochemical reduction process of Bi 3+ , HTeO 2 + , Sb III and their mixtures in nitric acid medium was investigated by means of cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) measurements. The reduction products electrodeposited at various potentials were examined using X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The results show that cathodic process in the nitric acid solution containing Bi 3+ , HTeO 2 + and Sb III involves the following reduction reactions in different polarizing potential ranges: In low polarizing potential ranges, Te 0 is formed firstly on the electrode surface through the electrochemical reduction of HTeO 2 + ; with the negative shift of the cathodic polarizing potential, the reduction reaction of Bi 3+ with Te 0 to form Bi 2 Te 3 takes place; when the cathodic polarizing potential is negative enough, Bi 3+ and Sb III react with Te 0 to form Bi 0.5 Sb 1.5 Te 3 . The results indicate that Bi 0.5 Sb 1.5 Te 3 films can be fabricated by controlling the electrodepositing potential in a proper high potential ranges.

Arsenic-Redox Transformation and Plant Growth Promotion by Purple Nonsulfur Bacteria Rhodopseudomonas palustris CS2 and Rhodopseudomonas faecalis SS5.

Science.gov (United States)

Batool, Kanza; Tuz Zahra, Fatima; Rehman, Yasir

2017-01-01

Arsenic (As) is a well-known toxic metalloid found naturally and released by different industries, especially in developing countries. Purple nonsulfur bacteria (PNSB) are known for wastewater treatment and plant growth promoting abilities. As-resistant PNSB were isolated from a fish pond. Based on As-resistance and plant growth promoting attributes, 2 isolates CS2 and SS5 were selected and identified as Rhodopseudomonas palustris and Rhodopseudomonas faecalis , respectively, through 16S rRNA gene sequencing. Maximum As(V) resistance shown by R. faecalis SS5 and R. palustris CS2 was up to 150 and 100 mM, respectively. R . palustris CS2 showed highest As(V) reduction up to 62.9% (6.29 ± 0.24 mM), while R. faecalis SS5 showed maximum As(III) oxidation up to 96% (4.8 ± 0.32 mM), respectively. Highest auxin production was observed by R. palustris CS2 and R. faecalis SS, up to 77.18 ± 3.7 and 76.67 ± 2.8  μ g mL -1 , respectively. Effects of these PNSB were tested on the growth of Vigna mungo plants. A statistically significant increase in growth was observed in plants inoculated with isolates compared to uninoculated plants, both in presence and in absence of As. R. palustris CS2 treated plants showed 17% (28.1 ± 0.87 cm) increase in shoot length and 21.7% (7.07 ± 0.42 cm) increase in root length, whereas R. faecalis SS5 treated plants showed 12.8% (27.09 ± 0.81 cm) increase in shoot length and 18.8% (6.9 ± 0.34 cm) increase in root length as compared to the control plants. In presence of As, R. palustris CS2 increased shoot length up to 26.3% (21.0 ± 1.1 cm), while root length increased up to 31.3% (5.3 ± 0.4 cm), whereas R. faecalis SS5 inoculated plants showed 25% (20.7 ± 1.4 cm) increase in shoot length and 33.3% (5.4 ± 0.65 cm) increase in root length as compared to the control plants. Bacteria with such diverse abilities could be ideal for plant growth promotion in As-contaminated sites.

Hole-dominated transport in InSb nanowires grown on high-quality InSb films

Energy Technology Data Exchange (ETDEWEB)

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U., E-mail: usha.philipose@unt.edu [University of North Texas, Department of Physics (United States)

2016-12-15

We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between Sb{sub 2}S{sub 3} and In and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40–60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 10{sup 17} cm{sup −3} and 1000 cm{sup 2} V{sup −1} s{sup −1}, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

Substrate Specificity of Na+,Cl-(HCO3-)-ATPase.

Science.gov (United States)

Yurkiv, V A; Melikhov, V I; Shubin, V S

2016-09-01

We studied substrate specificity of Na + ,Cl - (HCO 3 - )-ATPase. In most cases, replacement of ATP for other phosphate-containing substances resulted in not only pronounced suppression of phosphohydrolase reactions, but also dramatic changes of their responsiveness to the stimulating effect of monovalent ions. The data showed that Na + ,Cl - (HCO 3 - )-ATPase is a highly specific enzyme for ATP.

Improved electrochemical performance of natural honeycomb templated LiSbO3 as an anode in lithium-ion battery

International Nuclear Information System (INIS)

Kundu, M.; Mahanty, S.; Basu, R.N.

2011-01-01

Highlights: → LiSbO 3 powders are synthesized by using honeycomb from natural beehive as template. → Agglomeration-free morphology with discrete cubic shaped 40-80 nm particles. → Electrochemically active anode in lithium-ion coin cells. → Improved capacity retention and rate performance in templated LiSbO 3 . - Abstract: LiSbO 3 has been synthesized by wet-chemical route using natural honeycomb as template, followed by thermal treatment at 850 deg. C. X-ray powder diffraction (XRD) confirms a single phase material having an orthorhombic crystal structure with lattice parameters of a = 4.912 A, b = 8.679 A and c = 5.089 A. Field emission scanning electron microscopy (FESEM) revealed that while conventional LiSbO 3 synthesized without using any template (C-LiSbO 3 ) consists of softly agglomerated clusters of bar-shaped multifaceted micrometer-sized grains (0.5-4.0 μm long and 0.5-1.0 μm wide), templated LiSbO 3 (T-LiSbO 3 ) consists of an agglomeration-free morphology with discrete cubic shaped particles of sizes 40-80 nm. Electrochemical investigation in 2032 type coin cells vs Li/Li + shows that Li insertion in LiSbO 3 takes place at 0.78 V while Li extraction occurs in two stages at 1.1 and 1.4 V with initial capacities of 178 and 196 mAh g -1 for C-LiSbO 3 and T-LiSbO 3 respectively. While C-LiSbO 3 shows a drastic capacity fading retaining only 28% of initial capacity after 100 cycles, T-LiSbO 3 retains ∼48% of the initial capacity due to the faceted morphology of the nanoparticles.