Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators

Science.gov (United States)

Macdougal, Michael; Geske, Jon; Wang, Chad; Follman, David

2011-06-01

We describe the factors that go into the component choices for a short wavelength IR (SWIR) imager, which include the SWIR sensor, the lens, and the illuminator. We have shown the factors for reducing dark current, and shown that we can achieve well below 1.5 nA/cm2 for 15 μm devices at 7 °C. In addition, we have mated our InGaAs detector arrays to 640×512 readout integrated integrated circuits to make focal plane arrays (FPAs). The resulting FPAs are capable of imaging photon fluxes with wavelengths between 1 and 1.6 μm at low light levels. The dark current associated with these FPAs is extremely low, exhibiting a mean dark current density of 0.26 nA/cm2 at 0 °C. Noise due to the readout can be reduced from 95 to 57 electrons by using off-chip correlated double sampling. In addition, Aerius has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide low-speckle illumination, and provide artifact-free imagery versus conventional laser illuminators.

Pseudomorphic-to-bulk fcc phase transition of thin Ni films on Pd(100)

International Nuclear Information System (INIS)

Rizzi, G.A.; Petukhov, M.; Sedona, F.; Granozzi, G.; Cossaro, A.; Bruno, F.; Cvetko, D.; Morgante, A.; Floreano, L.

2004-01-01

We have measured the transformation of pseudomorphic Ni films on Pd(100) into their bulk fcc phase as a function of the film thickness. We made use of x-ray diffraction and x-ray induced photoemission to study the evolution of the Ni film and its interface with the substrate. The growth of a film with tetragonally strained face centered symmetry (fct) has been observed by out-of-plane x-ray diffraction up to a limit thickness of 10 Ni pseudomorphic layers (some of them partially filled and intermixed with the substrate), where a new fcc bulklike phase is formed. After the formation of the bulklike Ni domains, we observed the pseudomorphic fct domains to disappear preserving the number of layers and their spacing. The phase transition thus proceeds via lateral growth of the bulklike phase within the pseudomorphic one, i.e., the bulklike fcc domains penetrate down to the substrate when formed. This large depth of the walls separating the domains of different phases is also indicated by the increase of the intermixing at the substrate-film interface, which starts at the onset of the transition and continues at even larger thickness. The bulklike fcc phase is also slightly strained; its relaxation towards the orthomorphic lattice structure proceeds slowly with the film thickness, being not yet completed at the maximum thickness presently studied of 30 A (∼17 layers)

Widely Tunable High-Power Tapered Diode Laser at 1060 nm

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Sumpf, Bernd; Erbert, Götz

2011-01-01

We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser...... operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range....

Atmospheric CH 4 and H 2 O Monitoring With Near-Infrared InGaAs Laser Diodes by the SDLA, a Balloonborne Spectrometer for Tropospheric and Stratospheric In Situ Measurements

Science.gov (United States)

Durry, Georges; Megie, Gerard

1999-12-01

The Spectrom tre Diodes Laser Accordables (SDLA), a balloonborne spectrometer devoted to the in situ measurement of CH 4 and H 2 O in the atmosphere that uses commercial distributed-feedback InGaAs laser diodes in combination with differential absorption spectroscopy, is described. Absorption spectra of CH 4 (in the 1.653- m region) and H 2 O (in the 1.393- m region) are simultaneously sampled at 1-s intervals by coupling with optical fibers of two near-infrared laser diodes to a Herriott multipass cell open to the atmosphere. Spectra of methane and water vapor in an altitude range of 1 to 31 km recorded during the recent balloon flights of the SDLA are presented. Mixing ratios with a precision error ranging from 5% to 10% are retrieved from the atmospheric spectra by a nonlinear least-squares fit to the spectral line shape in conjunction with in situ simultaneous pressure and temperature measurements.

Extended wavelength InGaAs SWIR FPAs with high performance

Science.gov (United States)

Li, Xue; Li, Tao; Yu, Chunlei; Tang, Hengjing; Deng, Shuangyan; Shao, Xiumei; Zhang, Yonggang; Gong, Haimei

2017-09-01

The extended InGaAs short wavelength infrared (SWIR) detector covers 1.0-2.5 μm wavelength, which plays an important role in weather forecast, resource observation, low light level systems, and astronomical observation and so on. In order to fabricate the high performance extended InGaAs detector, materials structure and parameters were characterized with Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM), the spreading of minority carriers and lattice quality were obtained. Mesa etching process, etching damage restoration technique and low temperature passivation technique were used in the fabrication of the extended InGaAs detector. The improvement of material structure and device process was studied by fabricating and measuring different perimeter-to-area (P/A) photodiodes and singledevice, respectively. The dark current density of the extended InGaAs detector obviously was reduced, about 2 nA/cm2 at 170 K. The 512×256 FPAs were fabricated, the peak detectivity and the quantum efficiency of which are 5×1011 cmHz1/2/W and 80%, respectively. The staring image yielded of the 512×256 FPAs is shown, which demonstrates very good imaging quality.

Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

D' Costa, Vijay Richard, E-mail: vdcosta@asu.edu; Wang, Wei; Yeo, Yee-Chia, E-mail: eleyeoyc@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

2016-08-14

We investigated the compositional dependence of the near-bandgap dielectric function and the E{sub 0} critical point in pseudomorphic Ge{sub 1-x}Sn{sub x} alloys grown on Ge (100) substrate by molecular beam epitaxy. The complex dielectric functions were obtained using spectroscopic ellipsometry from 0.5 to 4.5 eV at room temperature. Analogous to the E{sub 1} and E{sub 1}+Δ{sub 1} transitions, a model consisting of the compositional dependence of relaxed alloys along with the strain contribution predicted by the deformation potential theory fully accounts for the observed compositional dependence in pseudomorphic alloys.

Low-Light-Level InGaAs focal plane arrays with and without illumination

Science.gov (United States)

Macdougal, Michael; Geske, Jon; Wang, Chad; Follman, David

2010-04-01

Short wavelength IR imaging using InGaAs-based FPAs is shown. Aerius demonstrates low dark current in InGaAs detector arrays with 15 μm pixel pitch. The same material is mated with a 640x 512 CTIA-based readout integrated circuit. The resulting FPA is capable of imaging photon fluxes with wavelengths between 1 and 1.6 microns at low light levels. The mean dark current density on the FPAs is extremely low at 0.64 nA/cm2 at 10°C. Noise due to the readout can be reduced from 95 to 57 electrons by using off-chip correlated double sampling (CDS). In addition, Aerius has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide speckle-free illumination, provide artifact-free imagery versus conventional laser illuminators.

Formation of columnar (In,Ga)As quantum dots on GaAs(100)

International Nuclear Information System (INIS)

He, J.; Noetzel, R.; Offermans, P.; Koenraad, P.M.; Gong, Q.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

2004-01-01

Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced

Low dark current InGaAs detector arrays for night vision and astronomy

Science.gov (United States)

MacDougal, Michael; Geske, Jon; Wang, Chad; Liao, Shirong; Getty, Jonathan; Holmes, Alan

2009-05-01

Aerius Photonics has developed large InGaAs arrays (1K x 1K and greater) with low dark currents for use in night vision applications in the SWIR regime. Aerius will present results of experiments to reduce the dark current density of their InGaAs detector arrays. By varying device designs and passivations, Aerius has achieved a dark current density below 1.0 nA/cm2 at 280K on small-pixel, detector arrays. Data is shown for both test structures and focal plane arrays. In addition, data from cryogenically cooled InGaAs arrays will be shown for astronomy applications.

Temperature Effects on The Electrical Characteristics of In0.15Ga0.85As Pseudomorphic High-Electron-Mobility Transistors

Directory of Open Access Journals (Sweden)

BECHLAGHEM Fatima Zohra

2017-10-01

Full Text Available Nowadays, GaAs-based HEMTs and pseudomorphic HEMTs are speedily replacing conventional MESFET technology in military and commercial applications including, communication, radar and automotive technologies having need of high gain, and low noise figures especially at millimeter-wave frequencies. In this work, a short gate length pseudomorphic HEMT "p-HEMT" on GaAs substrate is treated. As temperature dependence study is a very important part of the complete characterization on active devices, the impact of temperature variation on the electrical properties of our 30nm short gate length pseudomorphic high-electron mobility In0.15Ga0.85As device is investigated. All our static DC device characteristics and RF response have been obtained using a device simulator that is Silvaco software to examine temperature impact on our device output current, transconductance and cutoff frequency. The 30nm gate pseudomorphic HEMT reported here exhibit superior DC and RF performances, Our results reveals a maximum drain-source current IDS up to 537.16 mA/mm, a peak extrinsic transconductance Gm of 345.4 mS/mm, a cutoff frequency Ft of 285.9 GHz, and a maximum frequency Fmax of 1580 GHz at room temperature.

Palaeoclimatic significance of gypsum pseudomorphs in the inner shelf sediments off Machalipatnam bay

Digital Repository Service at National Institute of Oceanography (India)

Rao, V.P.

Pseudo-gypsum crystals have been found in the coarse fraction of the sediments from the inner continental shelf off Machilipatnam Bay. They range in size from 3 to 7 mm are elongate and lenticular in shape. Bassanite and calcite are pseudomorphs...

Calculation of band alignments and quantum confinement effects in zero- and one-dimensional pseudomorphic structures

International Nuclear Information System (INIS)

Yang, M.; Sturm, J.C.; Prevost, J.

1997-01-01

The strain field distributions and band lineups of zero-dimensional and one-dimensional strained pseudomorphic semiconductor particles inside a three-dimensional matrix of another semiconductor have been studied. The resulting strain in the particle and the matrix leads to band alignments considerably different from that in the conventional two-dimensional (2D) pseudomorphic growth case. The models are first applied to an ideal spherical and cylindrical Si 1-x Ge x particle in a large Si matrix. In contrast to the 2D case, the band alignments for both structures are predicted to be strongly type II, where the conduction-band edge and the valence-band edge of the Si matrix are both significantly lower than those in the Si 1-x Ge x inclusion, respectively. Band lineups and the lowest electron endash heavy-hole transition energies of a pseudomorphic V-groove Si 1-x Ge x quantum wire inside a large Si matrix have been calculated numerically for different size structures. The photoluminescence energies of a large Si 1-x Ge x V-groove structure on Si will be lower than those of conventional 2D strained Si 1-x Ge x for similar Ge contents. copyright 1997 The American Physical Society

Thermal stability studies on atomically clean and sulphur passivated InGaAs surfaces

Energy Technology Data Exchange (ETDEWEB)

Chauhan, Lalit; Hughes, Greg [School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9 (Ireland)

2013-03-15

High resolution synchrotron radiation core level photoemission measurements have been used to study the high temperature stability of sulphur passivated InGaAs surfaces and comparisons made with atomically clean surfaces subjected to the same annealing temperatures. Sulphur passivation of clean InGaAs surfaces prepared by the thermal removal of an arsenic capping layer was carried out using an in situ molecular sulphur treatment in ultra high vacuum. The elemental composition of the surfaces of these materials was measured at a series of annealing temperatures up to 530 C. Following a 480 C anneal In:Ga ratio was found to have dropped by 33% on sulphur passivated surface indicating a significant loss of indium, while no drop in indium signal was recorded at this temperature on the atomically InGaAs surface. No significant change in the As surface concentration was measured at this temperature. These results reflect the reduced thermal stability of the sulphur passivated InGaAs compared to the atomically clean surface which has implications for device fabrication. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Optical dating of relict sand wedges and composite-wedge pseudomorphs in Flanders, Belgium

DEFF Research Database (Denmark)

Buylaert, Jan-Pieter; Ghysels, Günther; Murray, Andrew S.

2009-01-01

We report on quartz Optically Stimulated Luminescence (OSL) dating of the infill of 14 relict sand wedges and composite-wedge pseudomorphs at 5 different sites in Flanders, Belgium. A laboratory dose recovery test indicates that the single-aliquot regenerative-dose (SAR) procedure is suitable for...

Crystallization of ikaite and its pseudomorphic transformation into calcite: Raman spectroscopy evidence

Science.gov (United States)

Sánchez-Pastor, N.; Oehlerich, Markus; Astilleros, José Manuel; Kaliwoda, Melanie; Mayr, Christoph C.; Fernández-Díaz, Lurdes; Schmahl, Wolfgang W.

2016-02-01

Ikaite (CaCO3·6H2O) is a metastable phase that crystallizes in nature from alkaline waters with high phosphate concentrations at temperatures close to 0 °C. This mineral transforms into anhydrous calcium carbonate polymorphs when temperatures rise or when exposed to atmospheric conditions. During the transformation in some cases the shape of the original ikaite crystal is preserved as a pseudomorph. Pseudomorphs after ikaite are considered as a valuable paleoclimatic indicator. In this work we conducted ikaite crystal growth experiments at near-freezing temperatures using the single diffusion silica gel technique, prepared with a natural aqueous solution from the polymictic lake Laguna Potrok Aike (51°57‧S, 70°23‧W) in Patagonia, Argentina. The ikaite crystals were recovered from the gels and the transformation reactions were monitored by in situ Raman spectroscopy at two different temperatures. The first spectra collected showed the characteristic features of ikaite. In successive spectra new bands at 1072, 1081 and 1086 cm-1 and changes in the intensity of bands corresponding to the OH modes were observed. These changes in the Raman spectra were interpreted as corresponding to intermediate stages of the transformation of ikaite into calcite and/or vaterite. After a few hours, the characteristics of the Raman spectrum were consistent with those of calcite. While ikaite directly transforms into calcite at 10 °C in contact with air, at 20 °C this transformation involves the formation of intermediate, metastable vaterite. During the whole process the external shape of ikaite crystals was preserved. Therefore, this transformation showed the typical characteristics of a pseudomorphic mineral replacement, involving the generation of a large amount of porosity to account for the large difference in molar volumes between ikaite and calcite. A mechanism involving the coupled dissolution of ikaite and crystallization of calcite/vaterite is proposed for this

Metastable growth of pure wurtzite InGaAs microstructures.

Science.gov (United States)

Ng, Kar Wei; Ko, Wai Son; Lu, Fanglu; Chang-Hasnain, Connie J

2014-08-13

III-V compound semiconductors can exist in two major crystal phases, namely, zincblende (ZB) and wurtzite (WZ). While ZB is thermodynamically favorable in conventional III-V epitaxy, the pure WZ phase can be stable in nanowires with diameters smaller than certain critical values. However, thin nanowires are more vulnerable to surface recombination, and this can ultimately limit their performances as practical devices. In this work, we study a metastable growth mechanism that can yield purely WZ-phased InGaAs microstructures on silicon. InGaAs nucleates as sharp nanoneedles and expand along both axial and radial directions simultaneously in a core-shell fashion. While the base can scale from tens of nanometers to over a micron, the tip can remain sharp over the entire growth. The sharpness maintains a high local surface-to-volume ratio, favoring hexagonal lattice to grow axially. These unique features lead to the formation of microsized pure WZ InGaAs structures on silicon. To verify that the WZ microstructures are truly metastable, we demonstrate, for the first time, the in situ transformation from WZ to the energy-favorable ZB phase inside a transmission electron microscope. This unconventional core-shell growth mechanism can potentially be applied to other III-V materials systems, enabling the effective utilization of the extraordinary properties of the metastable wurtzite crystals.

Evaluation of InGaAS array detector suitability to space environment

Science.gov (United States)

Tauziede, L.; Beulé, K.; Boutillier, M.; Bernard, F.; Reverchon, J.-L.; Buffaz, A.

2017-11-01

InGaAs material has a natural cutoff wavelength of 1.65µm so it is naturally suitable for detection in Short Wavelength InfraRed (SWIR) spectral range. Regarding Earth Observation Spacecraft missions this spectral range can be used for the CO2 concentration measurements in the atmosphere. CNES (French Space agency) is studying a new mission, Microcarb with a spectral band centered on 1.6µm wavelength. InGaAs detector looks attractive for space application because its low dark current allows high temperature operation, reducing by the way the needed instrument resources. The Alcatel Thales III-VLab group has developed InGaAs arrays technology (320x256 & 640x512) that has been studied by CNES, using internal facilities. Performance tests and technological evaluation were performed on a 320x256 pixels array with a pitch of 30µm. The aim of this evaluation was to assess this new technology suitability for space applications. The carried out test plan includes proton radiations with Random Telegraph Signal (RTS) study, operating lifetest and evolution of performances as a function of the operating temperature.

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

Science.gov (United States)

Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

2018-04-01

The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

Pseudomorphic growth of organic semiconductor thin films driven by incommensurate epitaxy

International Nuclear Information System (INIS)

Sassella, A.; Campione, M.; Raimondo, L.; Borghesi, A.; Bussetti, G.; Cirilli, S.; Violante, A.; Goletti, C.; Chiaradia, P.

2009-01-01

A stable pseudomorphic phase of α-quaterthiophene, a well known organic semiconductor, is obtained by growing films with organic molecular beam epitaxy (OMBE) on a single crystal of another organic semiconductor, namely, tetracene. The structural characteristics of the new phase are investigated by monitoring in situ the OMBE process by reflectance anisotropy spectroscopy; thus assessing that incommensurate epitaxy is in this case, the driving force for tuning the molecular packing in organic molecular films and in turn, their solid state properties

Life test of the InGaAs focal plane arrays detector for space applications

Science.gov (United States)

Zhu, Xian-Liang; Zhang, Hai-Yan; Li, Xue; Huang, Zhang-Cheng; Gong, Hai-Mei

2017-08-01

The short-wavelength infrared (SWIR) InGaAs focal plane array (FPA) detector consists of infrared detector chip, readout integrated circuit (ROIC), and flip-chip bonding interconnection by Indium bump. In order to satisfy space application requirements for failure rates or Mean Time to Failure (MTTF), which can only be demonstrated with the large number of detectors manufactured, the single pixel in InGaAs FPAs was chosen as the research object in this paper. The constant-stress accelerated life tests were carried out at 70°C 80°C 90°C and100°C. The failed pixels increased gradually during more than 14000 hours at each elevated temperatures. From the random failure data the activation energy was estimated to be 0.46eV, and the average lifetime of a single pixel in InGaAs FPAs was estimated to be longer than 1E+7h at the practical operating temperature (5°C).

Optical Cutting Interruption Sensor for Fiber Lasers

Directory of Open Access Journals (Sweden)

Benedikt Adelmann

2015-09-01

Full Text Available We report on an optical sensor system attached to a 4 kW fiber laser cutting machine to detect cutting interruptions. The sensor records the thermal radiation from the process zone with a modified ring mirror and optical filter arrangement, which is placed between the cutting head and the collimator. The process radiation is sensed by a Si and InGaAs diode combination with the detected signals being digitalized with 20 kHz. To demonstrate the function of the sensor, signals arising during fusion cutting of 1 mm stainless steel and mild steel with and without cutting interruptions are evaluated and typical signatures derived. In the recorded signals the piercing process, the laser switch on and switch off point and waiting period are clearly resolved. To identify the cutting interruption, the signals of both Si and InGaAs diodes are high pass filtered and the signal fluctuation ranges being subsequently calculated. Introducing a correction factor, we identify that only in case of a cutting interruption the fluctuation range of the Si diode exceeds the InGaAs diode. This characteristic signature was successfully used to detect 80 cutting interruptions of 83 incomplete cuts (alpha error 3.6% and system recorded no cutting interruption from 110 faultless cuts (beta error of 0. This particularly high detection rate in combination with the easy integration of the sensor, highlight its potential for cutting interruption detection in industrial applications.

InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Science.gov (United States)

Bru-Chevallier, C; El Akra, A; Pelloux-Gervais, D; Dumont, H; Canut, B; Chauvin, N; Regreny, P; Gendry, M; Patriarche, G; Jancu, J M; Even, J; Noe, P; Calvo, V; Salem, B

2011-10-01

The aim of this study is to achieve homogeneous, high density and dislocation free InGaAs quantum dots grown by molecular beam epitaxy for light emission on silicon substrates. This work is part of a project which aims at overcoming the severe limitation suffered by silicon regarding its optoelectronic applications, especially efficient light emission device. For this study, one of the key points is to overcome the expected type II InGaAs/Si interface by inserting the InGaAs quantum dots inside a thin silicon quantum well in SiO2 fabricated on a SOI substrate. Confinement effects of the Si/SiO2 quantum well are expected to heighten the indirect silicon bandgap and then give rise to a type I interface with the InGaAs quantum dots. Band structure and optical properties are modeled within the tight binding approximation: direct energy bandgap is demonstrated in SiO2/Si/InAs/Si/SiO2 heterostructures for very thin Si layers and absorption coefficient is calculated. Thinned SOI substrates are successfully prepared using successive etching process resulting in a 2 nm-thick Si layer on top of silica. Another key point to get light emission from InGaAs quantum dots is to avoid any dislocations or defects in the quantum dots. We investigate the quantum dot size distribution, density and structural quality at different V/III beam equivalent pressure ratios, different growth temperatures and as a function of the amount of deposited material. This study was performed for InGaAs quantum dots grown on Si(001) substrates. The capping of InGaAs quantum dots by a silicon epilayer is performed in order to get efficient photoluminescence emission from quantum dots. Scanning transmission electronic microscopy images are used to study the structural quality of the quantum dots. Dislocation free In50Ga50As QDs are successfully obtained on a (001) silicon substrate. The analysis of QDs capped with silicon by Rutherford Backscattering Spectrometry in a channeling geometry is also presented.

Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

DEFF Research Database (Denmark)

Xu, Zhangcheng

2004-01-01

deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate......The fabrication, characterization and exploitation of self-assembled quantum dot (QD) heterostructures have attracted much attention not only in basic research, but also by the promising device applications such as QD lasers. The Stranski-Krastanow (SK) growth and the submonolayer (SML) deposition...... deposition of 0.5 ML InAs and 2.5 MLGaAs. The growth, structure, and optical properties of SML InGaAs/GaAs QD heterostructures are investigated in detail. SML InGaAs/GaAs QD lasers lasing even at room temperature have been successfully realized. The gain properties of SML InGaAs QD lasers are studied...

Theoretical analysis of hydrogen chemisorption on Pd(111), Re(0001) and PdML/Re(0001), ReML/Pd(111) pseudomorphic overlayers

DEFF Research Database (Denmark)

Pallassana, Venkataraman; Neurock, Matthew; Hansen, Lars Bruno

1999-01-01

not appear to provide an independent parameter for assessing surface reactivity. The weak chemisorption of hydrogen on the Pd-ML/Re(0001) surface relates to substantial lowering of the d-band center of Pd, when it is pseudomorphically deposited as a monolayer on a Re substrate. [S0163-1829(99)00331-2].......Gradient-corrected density-functional theory (DFT-GGA) periodic slab calculations have been used to analyze the binding of atomic hydrogen on monometallic Pd(111), Re(0001), and bimetallic Pd-mL/Re(0001) [pseudomorphic monolayer of Pd(111) on Re(0001)] and Re-ML/Pd(111) surfaces. The computed...

Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

International Nuclear Information System (INIS)

Pearson, J.L.

1999-03-01

Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

International Nuclear Information System (INIS)

Shim, Byoung Rho; Torii, Satoshi; Ota, Takeshi; Kobayashi, Keisuke; Maehashi, Kenzo; Nakashima, Hisao; Lee, Sang Yun

1999-01-01

We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In x Ga 1-x As layers with x≤ 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing InGaAs thickness. The degree of polarization for the InGaAs QWRs was about 0.29. The PL observation evidences the carrier confinement in the QWRs. These results indicate that locally thick InGaAs strained QWRs were successfully formed at the edge of AlGaAs giant steps

Compact blue laser devices based on nonlinear frequency upconversion

International Nuclear Information System (INIS)

Risk, W.P.

1989-01-01

This paper reports how miniature sources of coherent blue radiation can be produced by using nonlinear optical materials for frequency upconversion of the infrared radiation emitted by laser diodes. Direct upconversion of laser diode radiation is possible, but there are several advantages to using the diode laser to pump a solid-state laser which is then upconverted. In either case, the challenge is to find combinations of nonlinear materials and laser for efficient frequency upconversion. Several examples have been demonstrated. These include intracavity frequency doubling of a diode-pumped 946-nm Nd:YAG laser, intracavity frequency mixing of a 809-nm GaAlAs laser diode with a diode- pumped 1064-nm Nd:YAG laser, and direct frequency doubling of a 994-nm strained-layer InGaAs laser diode

Growth of pseudomorphic structures through organic epitaxy

International Nuclear Information System (INIS)

Kaviyil, Sreejith Embekkat; Sassella, Adele; Borghesi, Alessandro; Campione, Marcello; Su Genbo; He Youping; Chen Chenjia

2012-01-01

The control of molecular orientation in thin solid film phases of organic semiconductors is a basic factor for the exploitation of their physical properties for optoelectronic devices. We compare structural and optical properties of thin films of the organic semiconductor α-quarterthiophene grown by molecular beam epitaxy on different organic substrates. We show how epitactic interactions, characteristic of the surface of organic crystals, can drive the orientation of the crystalline overlayer and the selection of specific polymorphs and new pseudomorphic phases. We identify a key role in this phenomenon played by the marked groove-like corrugations present in some organic crystal surfaces. Since different polymorphs possess rather different performance in terms of, e.g., charge carrier mobility, this strategy is demonstrated to allow for the growth of oriented phases with enhanced physical properties, while keeping the substrate at room temperature. These results provide useful guidelines for the design of technological substrates for organic epitaxy and they substantiate the adoption of an organic epitaxy approach for the fabrication of optoelectronic devices based on thin films of organic semiconductors.

Off state breakdown behavior of AlGaAs / InGaAs field plate pHEMTs

International Nuclear Information System (INIS)

Palma, John; Mil'shtein, Samson

2014-01-01

Off-state breakdown voltage, V br , is an important parameter determining the maximum power output of microwave Field Effect Transistors (FETs). In recent years, the use of field plates has been widely adopted to significantly increase V br . This important technological development has extended FET technologies into new areas requiring these higher voltages and power levels. Keeping with this goal, field plates were added to an existing AlGaAs / InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) process with the aim of determining the off-state breakdown mechanism and the dependency of V br on the field plate design. To find the mechanism responsible for breakdown, temperature dependent off-state breakdown measurements were conducted. It was found that at low current levels, the temperature dependence indicates thermionic field emission at the Schottky gate and at higher current levels, impact ionization is indicated. The combined results imply that impact ionization is ultimately the mechanism that is responsible for the breakdown in the tested transistors, but that it is preceded by thermionic field emission from the gate. To test the dependence of V br upon the field plate design, the field plate length and the etch depth through the highly-doped cap layer under the field plate were varied. Also, non-field plate devices were tested along side field plate transistors. It was found that the length of the etched region under the field plate is the dominant factor in determining the off-state breakdown of the more deeply etched devices. For less deeply etched devices, the length of the field plate is more influential. The influence of surface states between the highly doped cap layer and the passivation layer along the recess are believed to have a significant influence in the case of the more deeply etched examples. It is believed that these traps spread the electric field, thus raising the breakdown voltage. Three terminal breakdown voltages

Cleaved-edge overgrowth of aligned quantum dots on strained layers of InGaAs

International Nuclear Information System (INIS)

Wasserman, D.; Lyon, S.A.

2004-01-01

Strain aligned InAs quantum dots were grown on the cleaved edges of first growth samples containing strained In x Ga (1-x) As layers of varying thickness and indium fraction. The formation of the cleaved-edge quantum dots was observed by means of atomic force microscopy. 100% linear alignment of InAs quantum dots over the InGaAs strain layers of the first growth sample is demonstrated. Linear density of the aligned dots was found to depend on the properties of the underlying InGaAs strain layers. Vertical alignment of an additional InAs quantum dot layer over the buried, linearly aligned, initial dot layer was observed for thin GaAs spacer layers

Analysis of self-organized In(Ga)As quantum structures with the scanning transmission electron microscope

International Nuclear Information System (INIS)

Sauerwald, Andres

2008-01-01

Aim of this thesis was to apply the analytical methods of the scanning transmission electron microscopy to the study of self-organized In(Ga)As quantum structures. With the imaging methods Z contrast and bright field (position resolutions in the subnanometer range) and especially with the possibilities of the quantitative chemical EELS analysis of the scanning transmission electron microscope (STEM) fundamental questions concerning morphology and chemical properties of self-organized quantum structures should be answered. By the high position resolution of the STEM among others essentail morphological and structural parameters in the growth behaviour of ''dot in a well'' (DWell) structures and of vertically correlated quantum dots (QDs) could be analyzed. For the optimization of DWell structures samples were studied, the nominal InAs-QD growth position was directedly varied within the embedding InGaAs quantum wells. The STEM offers in connection with the EELS method a large potential for the chemical analysis of quantum structures. Studied was a sample series of self-organized InGaAs/GaAs structures on GaAs substrate, the stress of which was changed by varying the Ga content of the INGaAs material between 2.4 % and 4.3 % [de

Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

Science.gov (United States)

Golovynskyi, S.; Datsenko, O.; Seravalli, L.; Kozak, O.; Trevisi, G.; Frigeri, P.; Babichuk, I. S.; Golovynska, I.; Qu, Junle

2017-12-01

Deep levels in metamorphic InAs/In x Ga1-x As quantum dot (QD) structures are studied with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and photoluminescence (PL) spectroscopy and compared with data from pseudomorphic InGaAs/GaAs QDs investigated previously by the same techniques. We have found that for a low content of indium (x = 0.15) the trap density in the plane of self-assembled QDs is comparable or less than the one for InGaAs/GaAs QDs. However, the trap density increases with x, resulting in a rise of the defect photoresponse in PC and TSC spectra as well as a reduction of the QD PL intensity. The activation energies of the deep levels and some traps correspond to known defect complexes EL2, EL6, EL7, EL9, and EL10 inherent in GaAs, and three traps are attributed to the extended defects, located in InGaAs embedding layers. The rest of them have been found as concentrated mainly close to QDs, as their density in the deeper InGaAs buffers is much lower. This an important result for the development of light-emitting and light-sensitive devices based on metamorphic InAs QDs, as it is a strong indication that the defect density is not higher than in pseudomorphic InAs QDs.

MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

International Nuclear Information System (INIS)

Richter, D; Hafenbrak, R; Joens, K D; Schulz, W-M; Eichfelder, M; Rossbach, R; Jetter, M; Michler, P

2010-01-01

To achieve a low density of optically active InP-quantum dots we used InGaAs islands embedded in GaAs as a seed layer. First, the structural InGaAs quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 μeV and fine structure splittings of 25 μeV. Furthermore, using these InGaAs quantum dots as seed layer reduces the InP quantum dot density of optically active quantum dots drastically. InP quantum dot excitonic photoluminescence emission with a linewidth of 140 μeV has been observed.

Modeling and optimization of InGaAs infrared photovoltaic detectors

CERN Document Server

Piotrowski, J; Reginski, K

2000-01-01

The performance of In sub x Ga sub 1 sub - sub x As detectors operating in the 2-3.4 mu m spectral range and temperature of 300 K has been analyzed theoretically as a function of wavelength, band gap and doping level with special emphasis on 2-2.5 mu m and 3-3.5 mu m atmospheric window devices. The calculations show that the dominant generation-recombination mechanism in p-type, intrinsic and in a lightly doped n-type InGaAs is the spin split-off band Auger process (AS). Since the AS generation increases with the square of the hole concentration, the minimum thermal generation and the best performance can be obtained using moderately doped n-type material as the absorber region of a photovoltaic device. In principle, the ultimate performance can be achieved in the optimized homojunction devices with relatively thick n-type absorber region forming n-p junction with a thin p-type material. N-type doping of absorber region of InGaAs photodiodes at 300 K changes from 1x10 sup 1 sup 4 to 5.2x10 sup 1 sup 5 cm sup ...

Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

CERN Document Server

Vdovin, V I; Rzaev, M M; Burbaev, T M

2002-01-01

A multilayer GaAs/SiGe/Si heterostructure with InGaAs quantum dots (QDs) embedded in a GaAs layer was grown by molecular beam epitaxy (MBE) on a Si(001) substrate. A step-graded Si sub 1 sub - sub x Ge sub x (0 <= x <= 1) buffer layer and a GaAs layer with In sub y Ga sub 1 sub sub - sub y As (y approx 0.5) QDs were deposited consecutively in two different MBE systems. The heterostructure exhibits intense photoluminescence in the region of 1.3 mu m at room temperature. Perfect crystal InGaAs islands with height less than 10 nm are the sources of this radiation.

Lateral surface superlattices in strained InGaAs layers

International Nuclear Information System (INIS)

Milton, B.

2000-08-01

Lateral Surface Superlattices were fabricated by etching in strained InGaAs layers above a GaAs/AlGaAs 2DEG channel. These were etched both by dry plasma wet chemical etching to produce periods of 100nm, 200nm and 300nm. These superlattices were fabricated on Hall bars to allow four terminal measurement and a blanket gate was placed on top, to allow variations in the carrier concentration. The magnetoresistance effects of these superlattices were studied at varying values of gate voltage, which varies the carrier concentration and the electrostatic periodic potential and at temperatures down to 45mK in a dilution refrigerator. From the oscillations observed in the magnetoresistance trace's it is possible to calculate the magnitude of the periodic potential. This showed that the etched, strained InGaAs was producing an anisotropic piezoelectric potential, along with an isotropic electrostatic potential. The variation in period allowed a study of the change of this piezoelectric potential with the period as well as a study of the interactions between the electrostatic and piezoelectric potentials. Further, at the lowest temperatures a strong interaction was observed between the Commensurability Oscillations, caused by the periodic potential, and the Shubnikov-de Haas Oscillations due to the Landau. Levels. This interaction was studied as it varied with temperature and carrier concentration. (author)

Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

DEFF Research Database (Denmark)

Albert, F.; Schneider, C.; Stobbe, Søren

2010-01-01

We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform.

Science.gov (United States)

Park, Jin-Kown; Takagi, Shinichi; Takenaka, Mitsuru

2018-02-19

We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.

Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

Science.gov (United States)

Palumbo, F.; Pazos, S.; Aguirre, F.; Winter, R.; Krylov, I.; Eizenberg, M.

2017-06-01

The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution. At the present, he is a research staff of the National Council of Science and Technology (CONICET), working in the National Commission of Atomic Energy (CNEA) in Buenos Aires, Argentina, well embedded within international research collaboration. Since 2008, he is Professor at the National Technological University (UTN) in Buenos Aires, Argentina. Dr. Palumbo has received research fellowships from: Marie Curie Fellowship within the 7th European Community Framework Programme, Abdus Salam International Centre for Theoretical Physics (ICTP) Italy, National Council of Science and Technology (CONICET) Argentina, and Consiglio Nazionale delle Ricerche (CNR) Italy. He is also a frequent scientific visitor of academic institutions as IMM-CNR-Italy, Minatec Grenoble-France, the Autonomous University of Barcelona-Spain, and the Israel Institute of Technology-Technion. He has authored and co-authored more than 50 papers in international conferences and journals.

X-ray diffraction study of InAlAs-InGaAs on InP high electron mobility transistor structure prepared by molecular-beam epitaxy

International Nuclear Information System (INIS)

Liu, H.Y.; Kao, Y.C.; Kim, T.S.

1990-01-01

High-electron mobility transistors (HEMTs) can be prepared by growing alternating epitaxial layers of InAlAs and InGaAs on InP substrates. Lattice matched HEMTs are obtained by growing layers of IN x Al (1-x) As and In y Ga (1-y) As with x ≅ 0.5227 and y ≅ 0.5324. Varying the values of x and y by controlling the individual flux during molecular-beam epitaxial (MBE) growth, one can obtain pseudomorphic HEMTs. Pseudomorphic HEMTs may have superior electronic transport properties and larger conduction band discontinuity when compared to an unstrained one. The precise control of the composition is thus important to the properties of HEMTs. This control is however very difficult and the values of x and y may vary from run to run. The authors demonstrate in this paper the capability of a double crystal rocking curve (DCRC) on the structure characterization

Growth and temperature dependent photoluminescence of InGaAs quantum dot chains

International Nuclear Information System (INIS)

Yang, Haeyeon; Kim, Dong-Jun; Colton, John S.; Park, Tyler; Meyer, David; Jones, Aaron M.; Thalman, Scott; Smith, Dallas; Clark, Ken; Brown, Steve

2014-01-01

Highlights: • We examine the optical properties of novel quantum dot chains. • Study shows that platelets evolve into quantum dots during heating of the InGaAs platelets encapsulated with GaAs. • Single stack of quantum dots emits light at room temperature. • Quantum dots are of high quality, confirmed by cross-section TEM images and photoluminescence. • Light emission at room temperature weakens beyond the detection limit when the quantum dots form above the critical annealing temperature. - Abstract: We report a study of growth and photoluminescence from a single stack of MBE-grown In 0.4 Ga 0.6 As quantum dot chains. The InGaAs epilayers were grown at a low temperature so that the resulting surfaces remain flat with platelets even though their thicknesses exceed the critical thickness of the conventional Stranski–Krastanov growth mode. The flat InGaAs layers were then annealed at elevated temperatures to induce the formation of quantum dot chains. A reflection high energy electron diffraction study suggests that, when the annealing temperature is at or below 480 °C, the surface of growth front remains flat during the periods of annealing and growth of a 10 nm thick GaAs capping layer. Surprisingly, transmission electron microscopy images do indicate the formation of quantum dot chains, however, so the dot-chains in those samples may form from precursory platelets during the period of temperature ramping and subsequent capping with GaAs due to intermixing of group III elements. The optical emission from the quantum dot layer demonstrates that there is a critical annealing temperature of 480–500 °C above which the properties of the low temperature growth approach are lost, as the optical properties begin to resemble those of quantum dots produced by the conventional Stranski–Krastanov technique

InAs migration on released, wrinkled InGaAs membranes used as virtual substrate

International Nuclear Information System (INIS)

Filipe Covre da Silva, S; Lanzoni, E M; De Araujo Barboza, V; Deneke, Ch; Malachias, A; Kiravittaya, S

2014-01-01

Partly released, relaxed and wrinkled InGaAs membranes are used as virtual substrates for overgrowth with InAs. Such samples exhibit different lattice parameters for the unreleased epitaxial parts, the released flat, back-bond areas and the released wrinkled areas. A large InAs migration towards the released membrane is observed with a material accumulation on top of the freestanding wrinkles during overgrowth. A semi-quantitative analysis of the misfit strain shows that the material migrates to the areas of the sample with the lowest misfit strain, which we consider as the areas of the lowest chemical potential of the surface. Material migration is also observed for the edge-supported, freestanding InGaAs membranes found on these samples. Our results show that the released, wrinkled nanomembranes offer a growth template for InAs deposition that fundamentally changes the migration behavior of the deposited material on the growth surface. (paper)

Atomic-scale structure and formation of self-assembled In(Ga)As quantum rings

NARCIS (Netherlands)

Offermans, P.; Koenraad, P.M.; Wolter, J.H.; Granados, D.; Garcia, J.M.; Fomin, V.; Gladilin, V.N.; Devreese, J.T.

2006-01-01

The authors present an at.-scale anal. of the In distribution of self-assembled (In,Ga)As quantum rings (QRs), which are formed from InAs quantum dots by capping with a thin layer of GaAs and subsequent annealing. The size and shape of QRs as obsd. by cross-sectional scanning tunneling microscopy

Growth and characterization of InGaAs based nanowire-heterostructures

International Nuclear Information System (INIS)

Treu, Julian Pascal

2017-01-01

In this thesis we investigate III-V semiconductor nanowires integrated on silicon. Focusing on InGaAs-based heterostructures, we use molecular beam epitaxy (MBE) to obtain high purity material without the use of foreign metal catalysts such as gold. Instead of catalystassisted growth we use selective-area growth using prepatterned SiO 2 /Si(111) substrates prepared by improved nanoimprint lithography, resulting in highly periodic large scale arrays (1 x 1 cm 2 ) of vertically aligned nanowires with hexagonal cross-section. Studying the influence of the main growth parameter substrate temperature, arsenic- and III-material flux we systematically optimize yield and aspect ratio of InAs nanowires for different spacings. Capitalizing on the superior morphological homogeneity of arrays with more than 90% yield, we study their use as efficient surface emitters in the Terahertz regime and find excellent performance, clearly outperforming state-of the art bulk material, when taking the surface coverage into account. Furthermore, we explore nanowires with strongly reduced diameter, where adapted growth conditions result in dimensions as small as 20 nm, well within a quantum confined regime. Starting from optimized high-temperature InAs growth, we further investigate incorporation of gallium for composition tuned ternary InGaAs structures. Delineating the optimized growth parameter space we are able to address nearly the entire compositional range up to more than 80% Ga. Correlating X-ray diffraction, transmission electron microscopy (TEM) and micro-photoluminescence spectroscopy, we find a characteristic transition in crystal structure from wurtzite to zincblende dominated phase for intermediate Ga-content, a regime with luminescence mainly limited by compositional inhomogeneities, while structural defects prevail according linewidths of In- and Ga-rich samples. Furthermore, this successfully demonstrates position-controlled integration of InGaAs nanowires with composition

Shot-Noise-Limited Dual-Beam Detector for Atmospheric Trace-Gas Monitoring with Near-Infrared Diode Lasers

Science.gov (United States)

Durry, Georges; Pouchet, Ivan; Amarouche, Nadir; Danguy, Théodore; Megie, Gerard

2000-10-01

A dual-beam detector is used to measure atmospheric trace species by differential absorption spectroscopy with commercial near-infrared InGaAs laser diodes. It is implemented on the Spectrom tre Diodes Laser Accordables, a balloonborne tunable diode laser spectrometer devoted to the in situ monitoring of CH 4 and H 2 O. The dual-beam detector is made of simple analogical subtractor circuits combined with InGaAs photodiodes. The detection strategy consists in taking the balanced analogical difference between the reference and the sample signals detected at the input and the output of an open optical multipass cell to apply the full dynamic range of the measurements (16 digits) to the weak molecular absorption information. The obtained sensitivity approaches the shot-noise limit. With a 56-m optical cell, the detection limit obtained when the spectra is recorded within 8 ms is 10 4 (expressed in absorbance units). The design and performances of both a simple substractor and an upgraded feedback substractor circuit are discussed with regard to atmospheric in situ CH 4 absorption spectra measured in the 1.653- m region. Mixing ratios are obtained from the absorption spectra by application of a nonlinear least-squares fit to the full molecular line shape in conjunction with in situ P and T measurements.

Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers

International Nuclear Information System (INIS)

Kim, J. S.; Kim, E. K.; Hwang, H.; Park, K.; Yoon, E.; Park, I. W.; Park, Y. J.

2004-01-01

We have investigated the energy levels of InAs quantum dots (QDs) embedded in various barrier layers such as InP, InGaAs and GaAs by using deep level transient spectroscopy (DLTS) measurement. The apparent activation energy of 0.56 eV below the conduction band edge of barrier layers in the InAs/InP QD system was higher than 0.32 eV in the InAs/In 0.53 Ga 0.47 As QD system or 0.29 eV in the InAs/GaAs/In 0.53 Ga 0.47 As QD system, which was inserted in 10 mono-layers (MLs) GaAs between InAs QDs and the InGaAs barrier. The capture barrier heights of InAs QDs in the InAs/InP system was measured at more than about 0.18 eV, showing the existence of strain between QDs and barrier layers. The InAs/GaAs(10 MLs)/InGaAs system also showed about 0.12 eV capture barrier, but the InAs/InGaAs system has a very small barrier. This result might originate from the strain-relief effect due to InGaAs layers.

Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE

International Nuclear Information System (INIS)

Sasaki, Takuo; Takahasi, Masamitu; Norman, Andrew G.; Romero, Manuel J.; Al-Jassim, Mowafak M.; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2013-01-01

Defect characterization in molecular beam epitaxial (MBE) compositionally-graded In x Ga 1-x As layers on GaAs substrates consisting different thickness of overshooting (OS) layers was carried out using cathodoluminescence (CL) and transmission electron microscopy (TEM). We found that the thickness of the OS layer influences not only stress but also lattice defects generated in a top InGaAs layer. While the top InGaAs layer with a thin OS layer is under compression and has mainly threading dislocations, the top layer with a thick OS layer is under tension and exhibits inhomogeneous strain associating with phase separation. We will discuss the mechanisms of defect generation and their in-plane distribution based on strain relaxation at the top and OS layers. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Spin injection from Co2MnGa into an InGaAs quantum well

DEFF Research Database (Denmark)

Hickey, M. C.; Damsgaard, Christian Danvad; Holmes, S. N.

2008-01-01

We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifet...

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Czech Academy of Sciences Publication Activity Database

Dimitrakopulos, G.P.; Bazioti, C.; Grym, Jan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Pacherová, Oliva; Komninou, Ph.

2014-01-01

Roč. 306, Jul (2014), s. 89-93 ISSN 0169-4332 R&D Projects: GA MŠk 7AMB12GR034 Institutional support: RVO:68378271 ; RVO:67985882 Keywords : compound semiconductors * InGaAs * porous substrate * misfit dislocations * strain Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.711, year: 2014

270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

Science.gov (United States)

Grandusky, James R.; Chen, Jianfeng; Gibb, Shawn R.; Mendrick, Mark C.; Moe, Craig G.; Rodak, Lee; Garrett, Gregory A.; Wraback, Michael; Schowalter, Leo J.

2013-03-01

In this letter, the achievement of over 60 mW output power from pseudomorphic ultraviolet light-emitting diodes in continuous wave operation is reported. Die thinning and encapsulation improved the photon extraction efficiency to over 15%. Improved thermal management and a high characteristic temperature resulted in a low thermal rolloff up to 300 mA injection current with an output power of 67 mW, an external quantum efficiency (EQE) of 4.9%, and a wall plug efficiency (WPE) of 2.5% for a single-chip device emitting at 271 nm in continuous wave operation.

Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

NARCIS (Netherlands)

Offermans, P.; Koenraad, P.M.; Wolter, J.H.; Granados, D.; Garcia, J.M.; Fomin, V.; Gladilin, V.N.; Devreese, J.T.

2005-01-01

We present an atomic-scale analysis of the indium distribution of self-assembled In(Ga)As quantum rings (QRs) which are formed from InAs quantum dots by capping with a thin layer of GaAs and subsequent annealing. We find that the size and shape of QRs as observed by cross-sectional scanning

Photoluminescence studies of single InGaAs quantum dots

DEFF Research Database (Denmark)

Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

1999-01-01

Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

Noise characteristics analysis of short wave infrared InGaAs focal plane arrays

Science.gov (United States)

Yu, Chunlei; Li, Xue; Yang, Bo; Huang, Songlei; Shao, Xiumei; Zhang, Yaguang; Gong, Haimei

2017-09-01

The increasing application of InGaAs short wave infrared (SWIR) focal plane arrays (FPAs) in low light level imaging requires ultra-low noise FPAs. This paper presents the theoretical analysis of FPA noise, and point out that both dark current and detector capacitance strongly affect the FPA noise. The impact of dark current and detector capacitance on FPA noise is compared in different situations. In order to obtain low noise performance FPAs, the demand for reducing detector capacitance is higher especially when pixel pitch is smaller, integration time is shorter, and integration capacitance is larger. Several InGaAs FPAs were measured and analyzed, the experiments' results could be well fitted to the calculated results. The study found that the major contributor of FPA noise is coupled noise with shorter integration time. The influence of detector capacitance on FPA noise is more significant than that of dark current. To investigate the effect of detector performance on FPA noise, two kinds of photodiodes with different concentration of the absorption layer were fabricated. The detectors' performance and noise characteristics were measured and analyzed, the results are consistent with that of theoretical analysis.

Sub-monolayer dot vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Blokhin, S.A.; Maleev, N.A.; Kuz'menkov, A.G.

2006-01-01

Vertical-cavity surface-emitting lasers (VCSELs) based on submonolayer InGaAs quantum-dot active region and doped with AlGaAs/GaAs distributed Bragg reflectors were grown by molecular beam epitaxy. 3 μm aperture single-mode VCSELs demonstrate lasing at 980 nm with threshold current of 0.6 mA, maximum output power of 4 mW and external differential efficiency as high as 68%. Ultimately low internal optical losses were measured for these multimode sub-monolayer quantum dot VCSELs [ru

Millimeter-wave pseudomorphic HEMT MMIC phased array components for space communications

Science.gov (United States)

Lan, G. L.; Pao, C. K.; Wu, C. S.; Mandolia, G.; Hu, M.; Yuan, S.; Leonard, Regis

1991-01-01

Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.

Ageing tests of radiation damaged lasers and photodiodes for the CMS experiment at CERN

CERN Document Server

Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

2000-01-01

The effects of thermally accelerated ageing in irradiated and unirradiated 1310 nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (19 refs).

Real-time near IR (1310 nm) imaging of CO2 laser ablation of enamel.

Science.gov (United States)

Darling, Cynthia L; Fried, Daniel

2008-02-18

The high-transparency of dental enamel in the near-IR (NIR) can be exploited for real-time imaging of ablation crater formation during drilling with lasers. NIR images were acquired with an InGaAs focal plane array and a NIR zoom microscope during drilling incisions in human enamel samples with a lambda=9.3-microm CO(2) laser operating at repetition rates of 50-300-Hz with and without a water spray. Crack formation, dehydration and thermal changes were observed during ablation. These initial images demonstrate the potential of NIR imaging to monitor laser-ablation events in real-time to provide information about the mechanism of ablation and to evaluate the potential for peripheral thermal and mechanical damage.

Pseudomorphic growth mode of Pb on the Al{sub 13}Fe{sub 4}(0 1 0) approximant surface

Energy Technology Data Exchange (ETDEWEB)

Ledieu, J., E-mail: Julian.ledieu@univ-lorraine.fr [Institut Jean Lamour (UMR 7198 CNRS-Université de Lorraine), Parc de Saurupt, CS50840, 54011 Nancy Cedex (France); Weerd, M.-C de [Institut Jean Lamour (UMR 7198 CNRS-Université de Lorraine), Parc de Saurupt, CS50840, 54011 Nancy Cedex (France); Hahne, M.; Gille, P. [Department of Earth and Environmental Sciences, Crystallography Section, Ludwig-Maximilians-Universität München, Theresienstr. 41, D-80333 München (Germany); Fournée, V. [Institut Jean Lamour (UMR 7198 CNRS-Université de Lorraine), Parc de Saurupt, CS50840, 54011 Nancy Cedex (France)

2015-11-30

Highlights: • Pb adsorption has been characterised on the Al{sub 13}Fe{sub 4}(0 1 0) approximant surface. • A pseudomorphic Pb monolayer is formed at 300 K on this highly corrugated template. • The Pb atomic arrangement replicates the motifs observed on the clean surface. • The formation of surface alloys and intermixing can be disregarded. • Efficient energy dissipation of impinging adatoms allows additional layer deposition. - Abstract: We report the adsorption of lead adatoms on the pseudo-10-fold Al{sub 13}Fe{sub 4}(0 1 0) surface using low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). For the submonolayer regime, Pb adatoms remain highly mobile across the surface at 300 K. STM analysis indicates the formation of irregularly shaped islands of monoatomic height. The latter do not coalesce with increasing coverage. At 0.95 MLE coverage, the LEED patterns are consistent with a pseudomorphic growth of the adatoms. This is confirmed by STM measurements which reveal local motifs qualitatively similar to those observed on the clean Al{sub 13}Fe{sub 4}(0 1 0) surface, i.e. prior to dosing. Apart from the absence of plasmons, the XPS measurements of Pb 4f and Al 2s core levels are comparable to those observed for the Pb/Al(1 1 1) system.

Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness

Science.gov (United States)

Kajikawa, Y.; Nishigaichi, M.; Tenma, S.; Kato, K.; Katsube, S.

2018-04-01

InGaAs layers were grown by molecular-beam epitaxy on nominal and vicinal Ge(111) substrates with inserting GaSb buffer layers. High-resolution X-ray diffraction using symmetric 333 and asymmetric 224 reflections was employed to analyze the crystallographic properties of the grown layers. By using the two reflections, we determined the lattice constants (the unit cell length a and the angle α between axes) of the grown layers with taking into account the rhombohedral distortion of the lattices of the grown layers. This allowed us the independent determination of the strain components (perpendicular and parallel components to the substrate surface, ε⊥ and ε//) and the composition x of the InxGa1-xAs layers by assuming the distortion coefficient D, which is defined as the ratio of ε⊥ against ε//. Furthermore, the twin ratios were determined for the GaSb and the InGaAs layers by comparing asymmetric 224 reflections from the twin domain with that from the normal domain of the layers. As a result, it has been shown that the twin ratio in the InGaAs layer can be decreased to be less than 0.1% by the use of the vicinal substrate together with annealing the GaSb buffer layer during the growth interruption before the InGaAs overgrowth.

Gain dynamics in p-doped InGaAs quantum dot amplifiers from room to cryogenic temperatures

NARCIS (Netherlands)

Borri, P.; Cesaria, V.; Rossetti, M.; Fiore, A.; Langbein, W.

2009-01-01

We have compared the gain dynamics of the ground state excitonic transition between undoped and p-doped electrically-pumped InGaAs quantum-dot optical amplifiers, for temperatures from 300K to 20K. A pump-probe differential transmission technique in heterodyne detection with sub-picosecond time

Exciton dephasing in single InGaAs quantum dots

DEFF Research Database (Denmark)

Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

2000-01-01

The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance. In self-assembled quantum dot systems, a strong inhomogeneous broadening due to dot size fluctuations masks the homogeneous linewidth associated with transitions between individual states....... The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due...... to fast dephasing. We present an investigation of the low-temperature homogeneous linewidth of individual PL lines from MBE-grown In0.5Ga0.5As/GaAs quantum dots....

Large-format InGaAs focal plane arrays for SWIR imaging

Science.gov (United States)

Hood, Andrew D.; MacDougal, Michael H.; Manzo, Juan; Follman, David; Geske, Jonathan C.

2012-06-01

FLIR Electro Optical Components will present our latest developments in large InGaAs focal plane arrays, which are used for low light level imaging in the short wavelength infrared (SWIR) regime. FLIR will present imaging from their latest small pitch (15 μm) focal plane arrays in VGA and High Definition (HD) formats. FLIR will present characterization of the FPA including dark current measurements as well as the use of correlated double sampling to reduce read noise. FLIR will show imagery as well as FPA-level characterization data.

Metatitanic acid pseudomorphs after titanyl sulfates: nanostructured sorbents and precursors for crystalline titania with desired particle size and shape

Czech Academy of Sciences Publication Activity Database

Klementová, Mariana; Motlochová, Monika; Boháček, Jaroslav; Kupčík, Jaroslav; Palatinus, Lukáš; Pližingrová, Eva; Szatmáry, L.; Šubrt, Jan

2017-01-01

Roč. 17, č. 12 (2017), s. 6762-6769 ISSN 1528-7483 R&D Projects: GA TA ČR(CZ) TH02020110; GA MŠk(CZ) LM2015073 Institutional support: RVO:61388980 ; RVO:68378271 Keywords : metatitanic acid * titania * pseudomorph * titanyl sulfate dihydrate structure * morphology control * sorption * radionuclides Subject RIV: CA - Inorganic Chemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) OBOR OECD: Inorganic and nuclear chemistry; Condensed matter physics (including formerly solid state physics, supercond.) (FZU-D) Impact factor: 4.055, year: 2016

Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations

OpenAIRE

Kuznetsova, M. S.; Flisinski, K.; Gerlovin, I. Ya.; Ignatiev, I. V.; Kavokin, K. V.; Verbin, S. Yu.; Yakovlev, D. R.; Reuter, D.; Wieck, A. D.; Bayer, M.

2013-01-01

The role of nuclear spin fluctuations in the dynamic polarization of nuclear spins by electrons is investigated in (In,Ga)As quantum dots. The photoluminescence polarization under circularly polarized optical pumping in transverse magnetic fields (Hanle effect) is studied. A weak additional magnetic field parallel to the optical axis is used to control the efficiency of nuclear spin cooling and the sign of nuclear spin temperature. The shape of the Hanle curve is drastically modified with cha...

InGaAs detectors and FPA's for a large span of applications: design and material considerations

Science.gov (United States)

Vermeiren, J. P.; Merken, P.

2017-11-01

Compared with the other Infrared detector materials, such as HgCdTe (or MCT) and lead salts (e.g.: PbS, PbSe, PbSnTe, …), the history of InGaAs FPA's is not that old. Some 25 years ago the first linear detectors were used for space missions [1,2]. During the last 15-20 years InGaAs, grown lattice matched on InP, has become the work horse for the telecommunication industry [3] and later on for passive and active imagery in the SWIR range. For longer wavelengths than 1.7 μm, III-V materials are in strong competition with SWIR MCT and till now the performance of MCT is better than high In-content InGaAs. During the last years some alternatives based on quaternary materials [4] and on Superlattice structures [5] are making gradual progress in such a way that they can yield performing Focal planes in the (near) future. As the SWIR wavelengths range covers a large variety of applications, also the FPA characteristics and mainly the ROIC properties need to be adjusted to fulfil the mission requirements with the requested performance. Additionally one has to bear in mind that the nature of SWIR radiation is completely different from what is usually encountered in IR imaging. Whereas the signal of thermal imagery in the Middle Wavelength (MWIR: [3 - 5 μm]) or Long Wavelength (LWIR: [8 - 10 μm] or [8 - 12 μm]) band is characterized by a large DC pedestal, caused by objects at ambient temperature, and a small AC signal, due to the small temperature or emissivity variations, SWIR range imagery is characterized by a large dynamic range and almost no DC signal. In this sense the SWIR imagery is resembling more the nature of Visible and NIR imaging than that of thermal imagery.

InGaAs focal plane arrays for low-light-level SWIR imaging

Science.gov (United States)

MacDougal, Michael; Hood, Andrew; Geske, Jon; Wang, Jim; Patel, Falgun; Follman, David; Manzo, Juan; Getty, Jonathan

2011-06-01

Aerius Photonics will present their latest developments in large InGaAs focal plane arrays, which are used for low light level imaging in the short wavelength infrared (SWIR) regime. Aerius will present imaging in both 1280x1024 and 640x512 formats. Aerius will present characterization of the FPA including dark current measurements. Aerius will also show the results of development of SWIR FPAs for high temperaures, including imagery and dark current data. Finally, Aerius will show results of using the SWIR camera with Aerius' SWIR illuminators using VCSEL technology.

Active quenching circuit for a InGaAs single-photon avalanche diode

International Nuclear Information System (INIS)

Zheng Lixia; Wu Jin; Xi Shuiqing; Shi Longxing; Liu Siyang; Sun Weifeng

2014-01-01

We present a novel gated operation active quenching circuit (AQC). In order to simulate the quenching circuit a complete SPICE model of a InGaAs SPAD is set up according to the I–V characteristic measurement results of the detector. The circuit integrated with aROIC (readout integrated circuit) is fabricated in an CSMC 0.5 μm CMOS process and then hybrid packed with the detector. Chip measurement results show that the functionality of the circuit is correct and the performance is suitable for practical system applications. (semiconductor integrated circuits)

Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

Science.gov (United States)

Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

2016-06-01

Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

Passively mode-locked diode-pumped Tm3+:YLF laser emitting at 1.91 µm using a GaAs-based SESAM

Science.gov (United States)

Tyazhev, A.; Soulard, R.; Godin, T.; Paris, M.; Brasse, G.; Doualan, J.-L.; Braud, A.; Moncorgé, R.; Laroche, M.; Camy, P.; Hideur, A.

2018-04-01

We report on a diode-pumped Tm:YLF laser passively mode-locked with an InGaAs saturable absorber. The laser emits a train of 31 ps pulses at a wavelength of 1.91 µm with a repetition rate of 94 MHz and a maximum average power of 95 mW. A sustained and robust mode-locking with a signal-to-noise ratio of ~70 dB is obtained even at high relative air humidity, making this system attractive for applications requiring ultra-short pulses in the spectral window just below 2 µm.

Stability of quantum-dot excited-state laser emission under simultaneous ground-state perturbation

Energy Technology Data Exchange (ETDEWEB)

Kaptan, Y., E-mail: yuecel.kaptan@physik.tu-berlin.de; Herzog, B.; Schöps, O.; Kolarczik, M.; Woggon, U.; Owschimikow, N. [Institut für Optik und Atomare Physik, Technische Universität Berlin, Berlin (Germany); Röhm, A.; Lingnau, B.; Lüdge, K. [Institut für Theoretische Physik, Technische Universität Berlin, Berlin (Germany); Schmeckebier, H.; Arsenijević, D.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin (Germany); Mikhelashvili, V.; Eisenstein, G. [Technion Institute of Technology, Faculty of Electrical Engineering, Haifa (Israel)

2014-11-10

The impact of ground state amplification on the laser emission of In(Ga)As quantum dot excited state lasers is studied in time-resolved experiments. We find that a depopulation of the quantum dot ground state is followed by a drop in excited state lasing intensity. The magnitude of the drop is strongly dependent on the wavelength of the depletion pulse and the applied injection current. Numerical simulations based on laser rate equations reproduce the experimental results and explain the wavelength dependence by the different dynamics in lasing and non-lasing sub-ensembles within the inhomogeneously broadened quantum dots. At high injection levels, the observed response even upon perturbation of the lasing sub-ensemble is small and followed by a fast recovery, thus supporting the capacity of fast modulation in dual-state devices.

408-fs SESAM mode locked Cr:ZnSe laser

Science.gov (United States)

Bu, Xiangbao; Shi, Yuhang; Xu, Jia; Li, Huijuan; Wang, Pu

2018-01-01

We report self-starting femtosecond operation of a 127-MHz SESAM mode locked Cr:ZnSe laser around 2420 nm. A thulium doped double clad fiber laser at 1908 nm was used as the pumping source. In the normal dispersion regime, stable pulse pairs with constant phase differences in the multipulse regime were observed. The maximum output power was 342 mW with respect to incident pump power of 4.8 W and the corresponding slope efficiency was 10.4%. By inserting a piece of sapphire plate, dispersion compensation was achieved and the intra-cavity dispersion was moved to the anomalous regime. A maximum output power of 403 mW was obtained and the corresponding slope efficiency was 12.2%. Pulse width was measured to be 408 fs by a collinear autocorrelator using two-photon absorption in an InGaAs photodiode. The laser spectrum in multipulse operation showed a clear periodic modulation.

Burr formation detector for fiber laser cutting based on a photodiode sensor system

Science.gov (United States)

Schleier, Max; Adelmann, Benedikt; Neumeier, Benedikt; Hellmann, Ralf

2017-11-01

We report a unique sensor system based on a InGaAs photodiode to detect the formation of burr during near infrared fiber laser cutting. The sensor approach encompasses the measurement of the thermal radiation form the process zone, optical filtering, digitalized sampling at 20 kHz, digital filtering using an elliptical band-pass filter 12th order and calculation of the standard deviation. We find a linear correlation between the deduced sensor signal and the generated burr height with this functionality being experimentally confirmed for laser cutting of mild and stainless steel of different thicknesses. The underlying mechanism of this transducer concept is attributed to the melt flow dynamics inside the cut kerf.

Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

International Nuclear Information System (INIS)

Kumar, Rahul; Bag, Ankush; Mukhopadhyay, Partha; Das, Subhashis; Biswas, Dhrubes

2015-01-01

Highlights: • InGaAs graded MBs with different grading scheme has been grown by MBE on GaAs. • Continuously graded MB exhibits smoother surface morphology. • Grading scheme has been found to have little impact on lattice relaxation. • Grading schemeaffects the lattice tilt significantly. • Cross-hatch surface irregularities affect the crystallographic tilt. - Abstract: InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

Energy Technology Data Exchange (ETDEWEB)

Kumar, Rahul, E-mail: rkp203@gmail.com [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Bag, Ankush [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Mukhopadhyay, Partha [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur 721302 (India); Das, Subhashis [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Biswas, Dhrubes [Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

2015-12-01

Highlights: • InGaAs graded MBs with different grading scheme has been grown by MBE on GaAs. • Continuously graded MB exhibits smoother surface morphology. • Grading scheme has been found to have little impact on lattice relaxation. • Grading schemeaffects the lattice tilt significantly. • Cross-hatch surface irregularities affect the crystallographic tilt. - Abstract: InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

International Nuclear Information System (INIS)

Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

2010-01-01

Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Thermal instability and the growth of the InGaAs/AlGaAs pseudomorphic high electron mobility transistor system

International Nuclear Information System (INIS)

Pellegrino, Joseph G.; Qadri, Syed B.; Mahadik, Nadeemullah A.; Rao, Mulpuri V.; Tseng, Wen F.; Thurber, Robert; Gajewski, Donald; Guyer, Jonathan

2007-01-01

The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC)-controlled, growth scheme is compared. Several advantages of the DRS-grown pHEMTs over the TC-controlled version were observed. Modest improvements in mobility, on the order of 2%-3%, were observed in addition to a 20% reduction in carrier freeze-out for the DRS-grown pHEMTs at 77 K

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

Science.gov (United States)

Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

2005-01-01

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation

Directory of Open Access Journals (Sweden)

R. Salas

2017-09-01

Full Text Available We report the effects of the growth rate on the properties of iii-v nanocomposites containing rare-earth-monopnictide nanoparticles. In particular, the beneficial effects of surfactant-assisted growth of LuAs:In0.53Ga0.47As nanocomposites were found to be most profound at reduced LuAs growth rates. Substantial enhancement in the electrical and optical properties that are beneficial for ultrafast photoconductors was observed and is attributed to the higher structural quality of the InGaAs matrix in this new growth regime. The combined enhancements enabled a >50% increase in the amount of LuAs that could be grown without degrading the quality of the InGaAs overgrowth. Dark resistivity increased by ∼25× while maintaining carrier mobilities over 3000 cm2/V s; carrier lifetimes were reduced by >2×, even at high depositions of LuAs. The combined growth rate and surfactant enhancements offer a previously unexplored regime to enable high-performance fast photoconductors that may be integrated with telecom components for compact, broadly tunable, heterodyne THz source and detectors.

Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors

International Nuclear Information System (INIS)

Zimmermann, Lars; John, Joachim; Degroote, Stefan; Borghs, Gustaaf; Hoof, Chris van; Nemeth, Stefan

2003-01-01

We conducted an experimental study of back-side-illuminated InGaAs photodiodes grown on GaAs and sensitive in the short-wave infrared up to 2.4 μm. Standard metamorphic InGaAs or IR-transparent InAlAs buffers were grown by molecular-beam epitaxy. We studied dark current and photocurrent as a function of buffer thickness, buffer material, and temperature. A saturation of the dark current with buffer thickness was not observed. The maximum resistance area product was ∼10 Ω cm2 at 295 K. The dark current above 200 K was dominated by generation-recombination current. A pronounced dependence of the photocurrent on the buffer thickness was observed. The peak external quantum efficiency was 46% (at 1.6 μm) without antireflective coating

Progress in Applying Tunable Diode Laser Absorption Spectroscopy to Scramjet Isolators and Combustors

Science.gov (United States)

2010-05-01

us ing a T exas Instruments OPA380 transimpedance amplifier /op amp for each photodiode. This amplifier with 90 MHz of gain bandwidth is a single...spectra 4 2 Boltzmann plot for Run AC 6 3 CFD Simulations for isolator 7 4 Optical layout for diode laser system 11 5 Optical amplifier circuit 11 6...designed InGaAs photodiode arrays. These custom designed arrays amplify the signal f rom 2m m di ameter FGA21 phot odiodes ( FGA 21 f rom T horLabs

Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns

International Nuclear Information System (INIS)

Zhou Xun; Luo Zi-Jiang; Guo Xiang; Zhang Bi-Chan; Shang Lin-Tao; Zhou Qing; Deng Chao-Yong; Ding Zhao

2012-01-01

Surface segregation is studied via the evolution of reflection high-energy electron diffraction (RHEED) patterns under different values of As 4 BEP for InGaAs films. When the As 4 BEP is set to be zero, the RHEED pattern keeps a 4×3/(n × 3) structure with increasing temperature, and surface segregation takes place until 470 °C. The RHEED pattern develops into a metal-rich (4 × 2) structure as temperature increases to 495 °C. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515 °C, the RHEED pattern turns into a GaAs(2 × 4) structure due to In desorption. While the As 4 BEP comes up to a specific value (1.33 × 10 -4 Pa−1.33 × 10 -3 Pa), the surface temperature can delay the segregation and desorption. We find that As 4 BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption. (condensed matter: structural, mechanical, and thermal properties)

Subwavelength Gold Grating as Polarizers Integrated with InP-Based InGaAs Sensors.

Science.gov (United States)

Wang, Rui; Li, Tao; Shao, Xiumei; Li, Xue; Huang, Xiaqi; Shao, Jinhai; Chen, Yifang; Gong, Haimei

2015-07-08

There are currently growing needs for polarimetric imaging in infrared wavelengths for broad applications in bioscience, communications and agriculture, etc. Subwavelength metallic gratings are capable of separating transverse magnetic (TM) mode from transverse electric (TE) mode to form polarized light, offering a reliable approach for the detection in polarization way. This work aims to design and fabricate subwavelength gold gratings as polarizers for InP-based InGaAs sensors in 1.0-1.6 μm. The polarization capability of gold gratings on InP substrate with pitches in the range of 200-1200 nm (fixed duty cycle of 0.5) has been systematically studied by both theoretical modeling with a finite-difference time-domain (FDTD) simulator and spectral measurements. Gratings with 200 nm lines/space in 100-nm-thick gold have been fabricated by electron beam lithography (EBL). It was found that subwavelength gold gratings directly integrated on InP cannot be applied as good polarizers, because of the existence of SPP modes in the detection wavelengths. An effective solution has been found by sandwiching the Au/InP bilayer using a 200 nm SiO2 layer, leading to significant improvement in both TM transmission and extinction ratio. At 1.35 μm, the improvement factors are 8 and 10, respectively. Therefore, it is concluded that the Au/SiO2/InP trilayer should be a promising candidate of near-infrared polarizers for the InP-based InGaAs sensors.

Tunable, diode side-pumped Er:YAG laser

Science.gov (United States)

Hamilton, C.E.; Furu, L.H.

1997-04-22

A discrete-element Er:YAG laser, side pumped by a 220 Watt peak-power InGaAs diode array, generates >500 mWatts at 2.94 {micro}m, and is tunable over a 6 nm range near about 2.936 {micro}m. The oscillator is a plano-concave resonator consisting of a concave high reflector, a flat output coupler, a Er:YAG crystal and a YAG intracavity etalon, which serves as the tuning element. The cavity length is variable from 3 cm to 4 cm. The oscillator uses total internal reflection in the Er:YAG crystal to allow efficient coupling of the diode emission into the resonating modes of the oscillator. With the tuning element removed, the oscillator produces up to 1.3 Watts of average power at 2.94 {micro}m. The duty factor of the laser is 6.5% and the repetition rate is variable up to 1 kHz. This laser is useful for tuning to an atmospheric transmission window at 2.935 {micro}m (air wavelength). The laser is also useful as a spectroscopic tool because it can access several infrared water vapor transitions, as well as transitions in organic compounds. Other uses include medical applications (e.g., for tissue ablation and uses with fiber optic laser scalpels) and as part of industrial effluent monitoring systems. 4 figs.

Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang; Li, Guoqiang

2014-01-01

High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In x Ga 1−x As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In x Ga 1−x As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In x Ga 1−x As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In x Ga 1−x As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In x Ga 1−x As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In x Ga 1−x As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates

One-pot pseudomorphic crystallization of mesoporous porous silica to hierarchical porous zeolites

Energy Technology Data Exchange (ETDEWEB)

Xing, Jun-Ling; Jiang, Shu-Hua; Pang, Jun-Ling; Yuan, En-Hui; Ma, Xiao-Jing [Shanghai Key Laboratory of Green Chemistry and Chemical Processes, College of Chemistry and Molecular Engineering, East China Normal University, No. 3663 Zhongshan North Road, 200062 Shanghai (China); Lam, Koon-Fung [Department of Chemical Engineering, University College London, Torrington Place, London (United Kingdom); Xue, Qing-Song, E-mail: qsxue@chem.ecnu.edu.cn [Shanghai Key Laboratory of Green Chemistry and Chemical Processes, College of Chemistry and Molecular Engineering, East China Normal University, No. 3663 Zhongshan North Road, 200062 Shanghai (China); Zhang, Kun, E-mail: kzhang@chem.ecnu.edu.cn [Shanghai Key Laboratory of Green Chemistry and Chemical Processes, College of Chemistry and Molecular Engineering, East China Normal University, No. 3663 Zhongshan North Road, 200062 Shanghai (China)

2015-09-15

Hierarchically porous silica with mesopore and zeolitic micropore was synthesized via pseudomorphic crystallization under high-temperature hydrothermal treatment in the presence of cetyltrimethylammonium tosylate and tetrapropylammonium ions. A combined characterization using small-angle X-ray diffraction (XRD), nitrogen adsorption, high-resolution transmission electron microscopy (TEM), thermogravimetric analysis (TG), and elemental analysis showed that dual templates, CTA{sup +} and TPA{sup +} molecules, can work in a cooperative manner to synthesize mesoporous zeolite in a one-pot system by precisely tuning the reaction conditions, such as reaction time and temperature, and type and amount of heterometal atoms. It is found that the presence of Ti precursor is critical to the successful synthesis of such nanostructure. It not only retards the nucleation and growth of crystalline MFI domains, but also acts as nano-binder or nano-glue to favor the assembly of zeolite nanoblocks. - Graphical abstract: Display Omitted - Highlights: • A facile method to synthesize mesoporous zeolites with hierarchical porosity was presented. • It gives a new insight into keeping the balance between mesoscopic and molecular ordering in hierarchical porous materials. • A new understanding on the solid–solid transformation mechanism for the synthesis of titanosilicate zeolites was proposed.

High quality long-wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine

International Nuclear Information System (INIS)

Miller, B.I.; Young, M.G.; Oron, M.; Koren, U.; Kisker, D.

1990-01-01

High quality long-wavelength InGaAsP/InP lasers were grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine (TBA) as a substitute for AsH 3 . Electrical and photoluminescence measurements on InGaAs and InGaAsP showed that TBA-grown material was at least as good as AsH 3 material in terms of suitability for lasers. From two wafers grown by TBA, current thresholds I th as low as 11 mA were obtained for a 2-μm-wide semi-insulating blocking planar buried heterostructure laser lasing near 1.3 μm wavelength. The differential quantum efficiencies η D were as high as 21%/facet with a low internal loss α=21 cm -1 . In addition I th as low as 18 mA and η D as high as 18% have been obtained for multiplequantum well lasers at 1.54 μm wavelength. These results show that TBA might be used to replace AsH 3 without compromising on laser performance

Imaging surface plasmon polaritons using proximal self-assembled InGaAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Bracher, Gregor; Schraml, Konrad; Blauth, Mäx; Wierzbowski, Jakob; López, Nicolás Coca; Bichler, Max; Müller, Kai; Finley, Jonathan J.; Kaniber, Michael, E-mail: Michael.Kaniber@wsi.tum.de [Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany and Nanosystems Initiative Munich, Schellingstraße 4, 80799 München (Germany)

2014-07-21

We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiative processes do not play a major role for separations down to ∼10 nm. A polarized laser beam focused on one end of the plasmonic nanostructure generates propagating surface plasmon polaritons that, in turn, create electron-hole pairs in the GaAs substrate during propagation. These free carriers are subsequently captured by the quantum dots ∼25 nm below the surface, giving rise to luminescence. The intensity of the spectrally integrated quantum dot luminescence is used to image the propagating plasmon modes. As the waveguide width reduces from 5 μm to 1 μm, we clearly observe different plasmonic modes at the remote waveguide end, enabling their direct imaging in real space. This imaging technique is applied to a plasmonic beamsplitter facilitating the determination of the splitting ratio between the two beamsplitter output ports as the interaction length L{sub i} is varied. A splitting ratio of 50:50 is observed for L{sub i}∼9±1 μm and 1 μm wide waveguides for excitation energies close to the GaAs band edge. Our experimental findings are in good agreement with mode profile and finite difference time domain simulations for both waveguides and beamsplitters.

Manufacturing of calcium phosphate scaffolds by pseudomorphic transformation of gypsum

Energy Technology Data Exchange (ETDEWEB)

Araujo Batista, H. de.; Batista Cardoso, M.; Sales Vasconcelos, A.; Vinicius Lia Fook, M.; Rodriguez Barbero, M. A.; Garcia Carrodeguas, R.

2016-08-01

Carbonated hydroxyapatite (CHAp) and β-tricalcium phosphate (β-TCP) have been employed for decades as constituents of scaffolds for bone regeneration because they chemically resemble bone mineral. In this study, the feasibility to manufacture CHAp/β-TCP scaffolds by pseudomorphic transformation of casted blocks of gypsum was investigated. The transformation was carried out by immersing the precursor gypsum block in 1 M (NH{sub 4}){sub 2}HPO{sub 4}/1.33 M NH{sub 4}OH solution with liquid/solid ratio of 10 mL/g and autoclaving at 120 degree centigrade and 203 kPa (2 atm) for 3 h at least. Neither shape nor dimensions significantly changed during transformation. The composition of scaffolds treated for 3 h was 70 wt.% CHAp and 30 wt.% β-TCP, and their compressive and diametral compressive strengths were 6.5 ± 0.7 and 5.3 ±0.7 MPa, respectively. By increasing the time of treatment to 6 h, the composition of the scaffold enriched in β-TCP (60 wt.% CHAp and 40 wt.% β-TCP) but its compressive and diametral compressive strengths were not significantly affected (6.7 ± 0.9 and 5.4 ± 0.6 MPa, respectively). On the basis of the results obtained, it was concluded that this route is a good approach to the manufacturing of biphasic (CHAp/β-TCP) scaffolds from previously shaped pieces of gypsum. (Author)

Negative differential resistance of InGaAs dual channel transistors

International Nuclear Information System (INIS)

Sugaya, T; Yamane, T; Hori, S; Komori, K; Yonei, K

2006-01-01

We demonstrate a new type of velocity modulation transistor (VMT) with an InGaAs dual channel structure fabricated on an InP (001) substrate. The dual channel structure consists of a high mobility 10 nm In 0.53 Ga 0.47 As quantum well, a 2 nm In 0.52 Al 0.48 As barrier layer, and a low mobility 1 nm In 0.26 Ga 0.74 As quantum well. The VMTs have a negative differential resistance (NDR) effect with a low source-drain voltage of 0.38 V. The NDR characteristics can be clearly seen in the temperature range of 50 to 220 K with a gate voltage of 5 V. The NDR mechanism is thought to be the carrier transfer from the high mobility to the low mobility channels. Three-terminal VMTs are favorable for applications to highfrequency, high-speed, and low-power consumption devices

Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.

Science.gov (United States)

Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev

2016-06-27

We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer

Anisotropic electro-optic effect on InGaAs quantum dot chain modulators.

Science.gov (United States)

Liu, Wei; Liang, Baolai; Huffaker, Diana; Fetterman, Harold

2013-10-15

We investigated the anisotropic electro-optic (EO) effect on InGaAs quantum dot (QD) chain modulators. The linear EO coefficients were determined as 24.3 pm/V (33.8 pm/V) along the [011] direction and 30.6 pm/V (40.3 pm/V) along the [011¯] direction at 1.55 μm (1.32 μm) operational wavelength. The corresponding half-wave voltages (Vπs) were measured to be 5.35 V (4.35 V) and 4.65 V (3.86 V) at 1.55 μm (1.32 μm) wavelength. This is the first report on the anisotropic EO effect on QD chain structures. These modulators have 3 dB bandwidths larger than 10 GHz.

Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

International Nuclear Information System (INIS)

Xi Xiao-Wen; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Fan Qing-Yang; Shi Chun-Lei

2016-01-01

An electromagnetic pulse (EMP)-induced damage model based on the internal damage mechanism of the GaAs pseudomorphic high electron mobility transistor (PHEMT) is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level. (paper)

Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

Science.gov (United States)

Ketterson, Andrew A.; Masselink, William T.; Gedymin, Jon S.; Klem, John; Peng, Chin-Kun

1986-01-01

High-performance pseudomorphic In(y)Ga(1-y)As/Al0.15-Ga0.85As y = 0.05-0.2 MODFET's grown by MBE have been characterized at dc (300 and 77 K) and RF frequencies. Transconductances as high 310 and 380 mS/mm and drain currents as high as 290 and 310 mA/mm were obtained at 300 and 77 K, respectively, for 1-micron gate lengths and 3-micron source-drain spacing devices. Lack of persistent trapping effects, I-V collapse, and threshold voltage shifts observed with these devices are attributed to the use of low mole fraction Al(x)Ga(1-x)As while still maintaining two-dimensional electron gas concentrations of about 1.3 x to the 12th per sq cm. Detailed microwave S-parameter measurements indicate a current gain cut-off frequency of 24.5 GHz when y = 0.20, which is as much as 100 percent better than similar GaAs/AlGaAs MODFET structures, and a maximum frequency of oscillation of 40 GHz.

Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

CERN Document Server

Shim, B R; Ota, T; Kobayashi, K; Maehashi, K; Nakashima, H; Lee, S Y

1999-01-01

We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In sub x Ga sub 1 sub - sub x As layers with x<= 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing...

Blue-green ZnSe lasers with a new type of active region

International Nuclear Information System (INIS)

Ivanov, S.V.; Toropov, A.A.; Sorokin, S.V.; Shubina, T.V.; Sedova, I.V.; Kop'ev, P.S.; Alferov, Zh.I.; Waag, A.; Lugauer, H.J.; Reuscher, G.; Keim, M.; Fischer, F.F.; Landwehr, G.

1999-01-01

We report the results of an experimental study of molecular-beam epitaxy of ZnSe-based laser heterostructures with a new structure of the active region, which contains a fractional-monolayer CdSe recombination region in an expanded ZnSe quantum well and a waveguide based on a variably-strained, short-period superlattice are reported. Growth of a fractional-monolayer CdSe region with a nominal thickness of 2-3 ML, i.e., less than the critical thickness, on a ZnSe surface (Δa/a∼7%) leads to the formation of self-organized, pseudomorphic, CdSe-enriched islands with lateral dimensions ∼10-30 nm and density ∼2x10 10 cm -2 , which serve as efficient centers of carrier localization, giving rise to effective spatial separation of defective regions and regions of radiative recombination and, as a result, a higher quantum efficiency. Laser structures for optical pumping in the (Zn, Mg) (S, Se) system with a record-low threshold power density (less than 4 kW/cm 2 at 300 K) and continuous-wave laser diodes in the system (Be, Mg, Zn) Se with a 2.5 to 2.8-ML-thick, fractional-monolayer CdSe active region have been obtained. The laser structures and diodes have an improved degradation resistance

Pulsed Electrical Spin Injection into InGaAs Quantum Dots: Studies of the Electroluminescence Polarization Dynamics

International Nuclear Information System (INIS)

Asshoff, P.; Loeffler, W.; Fluegge, H.; Zimmer, J.; Mueller, J.; Westenfelder, B.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.

2010-01-01

We present time-resolved studies of the spin polarization dynamics during and after initialization through pulsed electrical spin injection into InGaAs quantum dots embedded in a p-i-n-type spin-injection light-emitting diode. Experiments are performed with pulse widths in the nanosecond range and a time-resolved single photon counting setup is used to detect the subsequent electroluminescence. We find evidence that the achieved spin polarization shows an unexpected temporal behavior, attributed mainly to many-carrier and non-equilibrium effects in the device.

Vacuum packaging of InGaAs focal plane array with four-stage thermoelectric cooler

Science.gov (United States)

Mo, De-feng; Liu, Da-fu; Yang, Li-yi; Xu, Qin-fei; Li, Xue

2013-09-01

The InGaAs focal plane array (FPA) detectors, covering the near-infrared 1~2.4 μm wavelength range, have been developed for application in space-based spectroscopy of the Earth atmosphere. This paper shows an all-metal vacuum package design for area array InGaAs detector of 1024×64 pixels, and its architecture will be given. Four-stage thermoelectric cooler (TEC) is used to cool down the FPA chip. To acquire high heat dissipation for TEC's Joule-heat, tungsten copper (CuW80) and kovar (4J29) is used as motherboard and cavity material respectively which joined by brazing. The heat loss including conduction, convection and radiation is analyzed. Finite element model is established to analyze the temperature uniformity of the chip substrate which is made of aluminum nitride (AlN). The performance of The TEC with and without heat load in vacuum condition is tested. The results show that the heat load has little influence to current-voltage relationship of TEC. The temperature difference (ΔT) increases as the input current increases. A linear relationship exists between heat load and ΔT of the TEC. Theoretical analysis and calculation show that the heat loss of radiation and conduction is about 187 mW and 82 mW respectively. Considering the Joule-heat of readout circuit and the heat loss of radiation and conduction, the FPA for a 220 K operation at room temperature can be achieved. As the thickness of AlN chip substrate is thicker than 1 millimeter, the temperature difference can be less than 0.3 K.

Accelerated aging tests of radiation damaged lasers and photodiodes for the CMS tracker optical links

CERN Document Server

Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

1999-01-01

The combined effects of radiation damage and accelerated ageing in COTS lasers and p-i-n photodiodes are presented. Large numbers of these devices are employed in future High Energy Physics experiments and it is vital that these devices are confirmed to be sufficiently robust in terms of both radiation resistance and reliability. Forty 1310 nm InGaAsP edge-emitting lasers (20 irradiated) and 30 InGaAs p- i-n photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C with periodic measurements made of laser threshold and efficiency, in addition to p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout- related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (13 refs).

From structure to spectra. Tight-binding theory of InGaAs quantum dots

International Nuclear Information System (INIS)

Goldmann, Elias

2014-01-01

demonstrates the applicability of InGaAs quantum dots for quantum telecommunication at the desired telecom wavelengths, offering good growth controllability. For the application in lasers, quantum based active media are known to offer superior properties to common quantum well lasers such as low threshold currents or temperature stability. For device design, the knowledge about the saturation behaviour of optical gain with excitation density is of major importance. In the present work we combine quantum-kinetic models for the calculation of the optical gain of quantum dot active media with our atomistic tight-binding model for the calculation of single-particle energies and wave functions. We investigate the interplay between structural properties of the quantum dots and many-body effects in the optical gain spectra and identify different regimes of saturation behaviour. Either phase-space filling dominates the excitation dependence of the optical gain, leading to saturation, or excitation-induced dephasing dominates the excitation dependence of the optical gain, resulting in a negative differential gain.

From structure to spectra. Tight-binding theory of InGaAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Goldmann, Elias

2014-07-23

counterintuitively. Our result demonstrates the applicability of InGaAs quantum dots for quantum telecommunication at the desired telecom wavelengths, offering good growth controllability. For the application in lasers, quantum based active media are known to offer superior properties to common quantum well lasers such as low threshold currents or temperature stability. For device design, the knowledge about the saturation behaviour of optical gain with excitation density is of major importance. In the present work we combine quantum-kinetic models for the calculation of the optical gain of quantum dot active media with our atomistic tight-binding model for the calculation of single-particle energies and wave functions. We investigate the interplay between structural properties of the quantum dots and many-body effects in the optical gain spectra and identify different regimes of saturation behaviour. Either phase-space filling dominates the excitation dependence of the optical gain, leading to saturation, or excitation-induced dephasing dominates the excitation dependence of the optical gain, resulting in a negative differential gain.

Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

Energy Technology Data Exchange (ETDEWEB)

Mukhtarova, Anna; Valdueza-Felip, Sirona; Redaelli, Luca; Durand, Christophe; Monroy, Eva; Eymery, Joël, E-mail: joel.eymery@cea.fr [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS group “Nanophysique et semiconducteurs”, CEA-INAC-PHELIQS, 17 av. des Martyrs, 38054 Grenoble (France); Bougerol, Catherine [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS group “Nanophysique et semiconducteurs”, Institut Néel-CNRS, 25 av. des Martyrs, 38042 Grenoble (France)

2016-04-18

We investigate the photovoltaic performance of pseudomorphic In{sub 0.1}Ga{sub 0.9}N/GaN multiple-quantum well (MQW) solar cells as a function of the total active region thickness. An increase in the number of wells from 5 to 40 improves the short-circuit current and the open-circuit voltage, resulting in a 10-fold enhancement of the overall conversion efficiency. Further increasing the number of wells leads to carrier collection losses due to an incomplete depletion of the active region. Capacitance-voltage measurements point to a hole diffusion length of 48 nm in the MQW region.

Raman Scattering analysis of InGaAs and AlGaAs superlattices grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Oeztuerk, N.; Bahceli, S.

2010-01-01

InGaAs/GaAs and AlGaAs/GaAs multiple quantum well structures were grown by molecular beam epitaxy and investigated by X-ray diffraction and micro Raman spectroscopy. Phonon modes are investigated in backscattering from (001) surface. In the measured micro Raman spectrum for both structure, phonon peaks can be resolved for GaAs. These are longitudinal optical (LO) mode at 293 cm - 1 and 294 cm - 1 for InGaAs and AlGaAs, respectively.

Performance of an Uncooled Camera Utilizing an SWIR InGaAs 256x256 FPA for Imaging in the 1.0 micrometer - 1.7 micrometer Spectral Band

National Research Council Canada - National Science Library

Barton, J

1998-01-01

.... The camera spectral sensitivity is established by the material properties of the detector array which is composed of photovoltaic detectors formed in an epitaxial layer of InGaAs with a composition...

High speed gain coupled DFB laser diode integrated with MQW electroabsorption modulator

International Nuclear Information System (INIS)

Kim, Myung Gyoo; Lee, Seung Won; Park, Seong Su; Oh, Dae Kon; Lee, Hee Tae; Kim, Hong man; Pyun, Kwang Eui

1998-01-01

We have demonstrated stable modulation characteristics of the gain coupled distributed feedback(GC-DFB) laser diode integrated with butt-coupled InGaAsP/InGaAsP strain compensated MQW(multiple-Quantum-well) modulator for high speed optical transmission. For this purpose, we have adopted the InGaAsP/InGaAsP strain compensated MQW structure for the EA modulator and n-doped InGaAs absorptive grating for DFB laser. The typical threshold current and slope efficiency were about 15 mA and 0.1 mW/mA, respectively. The extinction ratio of fabricated integrated device was about 15 dB at -2 V, and the small signal bandwidth was shown to be around 17GHz. We also found that the α parameter becomes negative at below a -0.6 V bias voltage. We transmitted 10 Gbps NRZ electrical signal over 90 km of standard single mode optical fiber (SMF). A clearly opened eye diagram was observed in the modulated output

High speed gain coupled DFB laser diode integrated with MQW electroabsorption modulator

CERN Document Server

Kim, M G; Park, S S; Oh, D K; Lee, H T; Kim, H M; Pyun, K E

1998-01-01

We have demonstrated stable modulation characteristics of the gain coupled distributed feedback(GC-DFB) laser diode integrated with butt-coupled InGaAsP/InGaAsP strain compensated MQW(multiple-Quantum-well) modulator for high speed optical transmission. For this purpose, we have adopted the InGaAsP/InGaAsP strain compensated MQW structure for the EA modulator and n-doped InGaAs absorptive grating for DFB laser. The typical threshold current and slope efficiency were about 15 mA and 0.1 mW/mA, respectively. The extinction ratio of fabricated integrated device was about 15 dB at -2 V, and the small signal bandwidth was shown to be around 17GHz. We also found that the alpha parameter becomes negative at below a -0.6 V bias voltage. We transmitted 10 Gbps NRZ electrical signal over 90 km of standard single mode optical fiber (SMF). A clearly opened eye diagram was observed in the modulated output.

Chronology and palaeoenvironmental implications of the ice-wedge pseudomorphs and composite-wedge casts on the Magdalen Islands (eastern Canada)

DEFF Research Database (Denmark)

Remillard, A.M.; Hetu, B.; Bernatchez, P.

2015-01-01

to the former presence of permafrost under periglacial conditions. These features truncate Carboniferous sandstone or Last Glacial Maximum (LGM) glacial and glaciomarine diamicts, both overlain by subtidal or coastal units. Six optically stimulated luminescence (OSL) and four radiocarbon ages were obtained from......The Magdalen Islands are a valuable terrestrial record, evidencing the complex glacial and periglacial history of the Gulf of St. Lawrence. Thirteen structures interpreted as ice-wedge pseudomorphs or composite-wedge casts were observed at four sites on the southern Magdalen Islands and testify...... both host and infilled sedimentary units. These ages provide the first absolute chronological data on these structures, shedding new light on the relationships between glacial and periglacial phases. Our chronostratigraphic data suggest that, after the deglaciation and the emersion of the archipelago...

Photodiode-based cutting interruption sensor for near-infrared lasers.

Science.gov (United States)

Adelmann, B; Schleier, M; Neumeier, B; Hellmann, R

2016-03-01

We report on a photodiode-based sensor system to detect cutting interruptions during laser cutting with a fiber laser. An InGaAs diode records the thermal radiation from the process zone with a ring mirror and optical filter arrangement mounted between a collimation unit and a cutting head. The photodiode current is digitalized with a sample rate of 20 kHz and filtered with a Chebyshev Type I filter. From the measured signal during the piercing, a threshold value is calculated. When the diode signal exceeds this threshold during cutting, a cutting interruption is indicated. This method is applied to sensor signals from cutting mild steel, stainless steel, and aluminum, as well as different material thicknesses and also laser flame cutting, showing the possibility to detect cutting interruptions in a broad variety of applications. In a series of 83 incomplete cuts, every cutting interruption is successfully detected (alpha error of 0%), while no cutting interruption is reported in 266 complete cuts (beta error of 0%). With this remarkable high detection rate and low error rate, the possibility to work with different materials and thicknesses in combination with the easy mounting of the sensor unit also to existing cutting machines highlight the enormous potential for this sensor system in industrial applications.

Ikaite pseudomorphs in the Zaire deep-sea fan: An intermediate between calcite and porous calcite

Science.gov (United States)

Jansen, J. H. F.; Woensdregt, C. F.; Kooistra, M. J.; van der Gaast, S. J.

1987-03-01

Translucent brown aggregates of calcium-carbonate crystals have been found in cores from the Zaire deep-sea fan (west equatorial Africa). The aggregates are well preserved but very friable. Upon storage they become yellowish white and cloudy and release water. Chemical, mineralogical (XRD), petrographical, crystal-morphological, and stable-isotope data demonstrate that the crystals have passed through three phases: (1) an authigenic carbonate phase, probably calcium carbonate, which is represented by the external habit of the present crystals; (2) a translucent brown ikaite phase (CaCO3·6H2O), unstable at temperatures above 5 °C; and (3) a phase consisting of calcite microcrystals that are poorly cemented and form a porous mass within the crystal form of the morphologically unchanged first phase. The transformation from the first phase into ikaite was probably a kinetic replacement. The transformation from ikaite into the third phase occurred because of storage at room temperature. The presence of ikaite is indicative of a low-temperature, anaerobic, organic-carbon-rich marine environment. Ikaite is probably the precursor of a great number of porous calcite pseudomorphs, and possibly also of many marine authigenic microcrystalline carbonate nodules.

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

International Nuclear Information System (INIS)

Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

2006-01-01

The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

[A Methane Detection System Using Distributed Feedback Laser at 1 654 nm].

Science.gov (United States)

Li, Bin; Liu, Hui-fang; He, Qi-xin; Zhai, Bing; Pan, Jiao-qing; Zheng, Chuan-tao; Wang, Yi-ding

2016-01-01

A methane (CH4) detection system based on tunable diode laser absorption spectroscopy (TDLAS) technique was experimentally demonstrated. A distributed feedback (DFB) laser around 1 654 nm, an open reflective sensing probe and two InGaAs photodiodes were adopted in the system. The electrical part of the system mainly includes the laser temperature control & modulation module and the orthogonal lock-in amplifier module. Temperature and spectrum tests on the DFB laser indicate that, the laser temperature fluctuation can be limited to the range of -0.02-0.02 degrees C, the laser's emitting wavelength varies linearly with the temperature and injection current, and also good operation stability of the laser was observed through experiments. Under a constant working temperature, the center wavelength of the laser is varied linearly by adjusting the driving current. Meanwhile, a 5 kHz sine wave signal and a 10 Hz saw wave signal were provided by the driving circuit for the harmonic extraction purpose. The developed orthogonal lock-in amplifier can extract the If and 2f harmonic signals with the extraction error of 3.55% and 5% respectively. By using the open optical probe, the effective optical pass length was doubled to 40 cm. Gas detection experiment was performed to derive the relation between the harmonic amplitude and the gas concentration. As the concentration increases from 1% to 5%, the amplitudes of the 1f harmonic and the 2f harmonic signal were obtained, and good linear ration between the concentration and the amplitude ratio was observed, which proves the normal function of the developed detection system. This system is capable to detect other trace gases by using relevant DFB lasers.

Near-IR imaging of thermal changes in enamel during laser ablation

Science.gov (United States)

Maung, Linn H.; Lee, Chulsung; Fried, Daniel

2010-02-01

The objective of this work was to observe the various thermal-induced optical changes that occur in the near-infrared (NIR) during drilling in dentin and enamel with the laser and the high-speed dental handpiece. Tooth sections of ~ 3 mm-thickness were prepared from extracted human incisors (N=60). Samples were ablated with a mechanically scanned CO2 laser operating at a wavelength of 9.3-μm, a 300-Hz laser pulse repetition rate, and a laser pulse duration of 10-20 μs. An InGaAs imaging camera was used to acquire real-time NIR images at 1300-nm of thermal and mechanical changes (cracks). Enamel was rapidly removed by the CO2 laser without peripheral thermal damage by mechanically scanning the laser beam while a water spray was used to cool the sample. Comparison of the peripheral thermal and mechanical changes produced while cutting with the laser and the high-speed hand-piece suggest that enamel and dentin can be removed at high speed by the CO2 laser without excessive peripheral thermal or mechanical damage. Only 2 of the 15 samples ablated with the laser showed the formation of small cracks while 9 out of 15 samples exhibited crack formation with the dental hand-piece. The first indication of thermal change is a decrease in transparency due to loss of the mobile water from pores in the enamel which increase lightscattering. To test the hypothesis that peripheral thermal changes were caused by loss of mobile water in the enamel, thermal changes were intentionally induced by heating the surface. The mean attenuation coefficient of enamel increased significantly from 2.12 +/- 0.82 to 5.08 +/- 0.98 with loss of mobile water due to heating.

An EELS sub-nanometer investigation of the dielectric gate stack for the realization of InGaAs based MOSFET devices

International Nuclear Information System (INIS)

Longo, P; Paterson, G W; Craven, A J; Holland, M C; Thayne, I G

2010-01-01

In this paper, a subnanometer investigation of the Ga 2 O 3 /GdGaO dielectric gate stack deposited onto InGaAs is presented. Results regarding the influence of the growth conditions on the interface region from a chemical and morphological point of view are presented. The chemical information reported in this paper has been obtained using electron energy loss spectroscopy (EELS) that was carried out in a scanning transmission electron microscope ((S)TEM) showing both spatial and depth resolution.

Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

Czech Academy of Sciences Publication Activity Database

Zíková, Markéta; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Hulicius, Eduard

2017-01-01

Roč. 464, Apr (2017), s. 59-63 ISSN 0022-0248 R&D Projects: GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : MOVPE * quantum dot * strain reducing layer * InAs * GaAsSb * InGaAs Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

Composition Related Electrical Active Defect States of InGaAs and GaAsN

Directory of Open Access Journals (Sweden)

Arpad Kosa

2017-01-01

Full Text Available This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition dependent impurities and the investigation of their possible origins. For this purpose a widely utilized spectroscopy method, Deep Level Transient Fourier Spectroscopy, was utilized. The most significant responses of each sample labelled as InG2, InG3 and NG1, NG2 were discussed in detail and confirmed by simulations and literature data. The presence of a possible dual conduction type and dual state defect complex, dependent on the In/N composition, is reported. Beneficial characteristics of specific indium and nitrogen concentrations capable of eliminating or reducing certain point defects and dislocations are stated.

Reconstruction of original indium distribution in InGaAs quantum wells from experimental SIMS depth profiles

Energy Technology Data Exchange (ETDEWEB)

Kudriavtsev, Yu., E-mail: yuriyk@cinvestav.mx [Departamento Ingeniería Eléctrica – SEES, CINVESTAV-IPN, Av. IPN #2508, D.F., México (Mexico); Asomoza, R. [Departamento Ingeniería Eléctrica – SEES, CINVESTAV-IPN, Av. IPN #2508, D.F., México (Mexico); Gallardo-Hernandez, S.; Ramirez-Lopez, M.; Lopez-Lopez, M. [Departamento de Física, CINVESTAV-IPN, México (Mexico); Nevedomsky, V.; Moiseev, K. [Ioffe Physical Technical Institute, S-Petersburg (Russian Federation)

2014-11-15

Depth profiling analysis of InGaAs/GaAs hetero-structures grown by MBE on GaAs (0 0 1) substrates is reported. A novel two-step procedure for de-convolving experimental SIMS depth distribution is employed and the original In distribution in InGaAs quantum wells (QW) is estimated. The QW thickness calculated from the de-convolved profiles is shown to be in good agreement with the cross-sectional TEM images. The experimental In depth profile is shifted from the original In distribution due to the ion mixing process during depth profiling analysis. It is shown that the de-convolution procedure is suitable for reconstruction of the original QW width and depth by SIMS even for relatively high primary ion energies.

Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on artificially patterned GaAs (3 1 1)B substrates

NARCIS (Netherlands)

Selçuk, E.; Hamhuis, G.J.; Nötzel, R.

2009-01-01

Self-organized anisotropic strain engineering is combined with growth on artificially patterned GaAs (3 1 1)B substrates to realize complex lateral ordering of InGaAs and InAs quantum dots (QDs) guided by steps and facets generated along the pattern sidewalls. Depending on the pattern design, size,

Generation of high-field terahertz pulses in an HMQ-TMS organic crystal pumped by an ytterbium laser at 1030 nm.

Science.gov (United States)

Rovere, Andrea; Jeong, Young-Gyun; Piccoli, Riccardo; Lee, Seung-Heon; Lee, Seung-Chul; Kwon, O-Pil; Jazbinsek, Mojca; Morandotti, Roberto; Razzari, Luca

2018-02-05

We present the generation of high-peak-electric-field terahertz pulses via collinear optical rectification in a 2-(4-hydroxy-3-methoxystyryl)-1-methilquinolinium-2,4,6-trimethylbenzenesulfonate (HMQ-TMS) organic crystal. The crystal is pumped by an amplified ytterbium laser system, emitting 170-fs-long pulses centered at 1030 nm. A terahertz peak electric field greater than 200 kV/cm is obtained for 420 µJ of optical pump energy, with an energy conversion efficiency of 0.26% - about two orders of magnitude higher than in common inorganic crystals collinearly pumped by amplified femtosecond lasers. An open-aperture Z-scan measurement performed on an n-doped InGaAs thin film using such terahertz source shows a nonlinear increase in the terahertz transmission of about 2.2 times. Our findings demonstrate the potential of this terahertz generation scheme, based on ytterbium laser technology, as a simple and efficient alternative to the existing intense table-top terahertz sources. In particular, we show that it can be readily used to explore nonlinear effects at terahertz frequencies.

Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

Science.gov (United States)

Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

1987-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

OpenAIRE

Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

2016-01-01

InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the ...

Wavelength stabilized high pulse power laser diodes for automotive LiDAR

Science.gov (United States)

Knigge, A.; Klehr, A.; Wenzel, H.; Zeghuzi, A.; Fricke, J.; Maaßdorf, A.; Liero, A.; Tränkle, G.

2018-03-01

Diode lasers generating optical pulses with high peak power and lengths in the nanosecond range are key components of systems for free-space communication, metrology, material processing, spectroscopy, and light detection and ranging (LiDAR) as needed for object detection and autonomous driving. Automotive LiDAR systems demand additionally a good beam quality and low wavelength shift with temperature due to the wide operating temperature span. We present here internally wavelength stabilized lasers emitting ns optical pulses from an emission aperture between 30 μm and 100 μm with peak powers of tens of Watts at wavelengths around 905 nm. The vertical structure based on AlGaAs (confinement and cladding layers) and InGaAs (active quantum well) is especially optimized for pulsed operation with respect to the implementation of a surface Bragg grating with a high reflectivity. The fabricated 6 mm long distributed Bragg reflector (DBR) broad area (BA) lasers are electrically driven by an in-house developed high-speed unit generating 3 to 10 ns long nearly rectangular shaped current pulses with amplitudes of up to 250 A. Such lasers emit optical pulses with a peak power of more than 30 W at 95 A pulse current up to a temperature of 85°C with a wavelength shift as low as 65 pm/K and a lateral beam propagation factor less than 10. The influence of the lateral aperture width and the pulse length on the beam quality will be shown. A monolithic integration of 3 DBR BA lasers on a single chip whose emission can be combined into a single beam raises the output power to more than 100 W.

Low frequency noise and electrical transport properties of pseudomorphic Si/Si1-xGex heterostructures

International Nuclear Information System (INIS)

Prest, Martin James

2001-01-01

Growth of high germanium content (x=0.44) pseudomorphic Si/Si 1-x Ge x structures at low temperature, followed by a high temperature anneal, was optimised for low temperature mobility. The optimum was found for growth at 380 deg C with an ex-situ anneal at 800 deg C which gave a 10K mobility of 1030cm 2 V -1 s -1 with a sheet density of 1.2x10 12 cm -2 . A sample grown at 380 deg C with an in-situ anneal at 800 deg C gave an even higher 10K mobility of 1985cm 2 V -1 s -1 with a sheet density of 1.0x10 12 cm -2 . Chemical etching was used to fully deplete the dopant supply layer so that a room temperature Hall mobility of 255cm 2 V -1 s -1 was measured. Variation of the Hall coefficient was used to determine the room temperature Hall scattering factor as 0.58 which gave a Drift mobility of 440cm 2 V -1 s -1 (about twice that of a conventional Si pMOS device at the same vertical electric field). Pseudomorphic Si/Si 1-x Ge x pMOSFETs (x=0.36) with Si cap thicknesses of 2, 5 and 8nm were also investigated. Inversion charge extracted from CV measurements was used to determine the room temperature effective mobility. A peak mobility of 220cm 2 V -1 s -1 was determined for a 5nm cap sample which was about twice that of the Si control. Interface trap densities from CV were found to increase with reduction of Si cap thickness. The deterioration in interface quality correlated with a reduction in peak mobility. Although the thickest cap sample had the highest peak mobility, mobility degradation with increased vertical field was rapid due to the early onset of parallel conduction in the Si cap. Mobility calculations were fitted to low temperature Hall measurements which provided a theoretical model of the mobility degradation. Scattering by oxide impurities was shown to decrease carrier mobility with an increased effect for thinner caps. For the thinnest cap sample an increase in interface impurities and hetero-interface roughness was required to explain the observed results

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Li, Xiao-Hang; Detchprohm, Theeradetch; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Dupuis, Russell D., E-mail: dupuis@gatech.edu [Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250 (United States); Wang, Shuo; Wei, Yong O.; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Wernicke, Tim; Reich, Christoph; Martens, Martin; Kneissl, Michael [Technical University of Berlin, Institute for Solid State Physics, Berlin D-10623 (Germany)

2014-10-06

Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire substrates. Stimulated emission was observed at wavelengths of 256 nm and 249 nm with thresholds of 61 kW/cm{sup 2} and 95 kW/cm{sup 2} at room temperature, respectively. The thresholds are comparable to the reported state-of-the-art AlGaN-based MQW DUV lasers grown on bulk AlN substrates emitting at 266 nm. These low thresholds are attributed to the optimization of active region and waveguide layer as well as the use of high-quality AlN/sapphire templates. The stimulated emission above threshold was dominated by transverse-electric polarization. This work demonstrates the potential candidacy of sapphire substrates for DUV diode lasers.

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

International Nuclear Information System (INIS)

Li, Xiao-Hang; Detchprohm, Theeradetch; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Dupuis, Russell D.; Wang, Shuo; Wei, Yong O.; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.; Wernicke, Tim; Reich, Christoph; Martens, Martin; Kneissl, Michael

2014-01-01

Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire substrates. Stimulated emission was observed at wavelengths of 256 nm and 249 nm with thresholds of 61 kW/cm 2 and 95 kW/cm 2 at room temperature, respectively. The thresholds are comparable to the reported state-of-the-art AlGaN-based MQW DUV lasers grown on bulk AlN substrates emitting at 266 nm. These low thresholds are attributed to the optimization of active region and waveguide layer as well as the use of high-quality AlN/sapphire templates. The stimulated emission above threshold was dominated by transverse-electric polarization. This work demonstrates the potential candidacy of sapphire substrates for DUV diode lasers.

Real-time near-IR imaging of laser-ablation crater evolution in dental enamel

Science.gov (United States)

Darling, Cynthia L.; Fried, Daniel

2007-02-01

We have shown that the enamel of the tooth is almost completely transparent near 1310-nm in the near-infrared and that near-IR (NIR) imaging has considerable potential for the optical discrimination of sound and demineralized tissue and for observing defects in the interior of the tooth. Lasers are now routinely used for many applications in dentistry including the ablation of dental caries. The objective of this study was to test the hypothesis that real-time NIR imaging can be used to monitor laser-ablation under varying conditions to assess peripheral thermal and transient-stress induced damage and to measure the rate and efficiency of ablation. Moreover, NIR imaging may have considerable potential for monitoring the removal of demineralized areas of the tooth during cavity preparations. Sound human tooth sections of approximately 3-mm thickness were irradiated by a CO II laser under varying conditions with and without a water spray. The incision area in the interior of each sample was imaged using a tungsten-halogen lamp with band-pass filter centered at 131--nm combined with an InGaAs focal plane array with a NIR zoom microscope in transillumination. Due to the high transparency of enamel at 1310-nm, laser-incisions were clearly visible to the dentin-enamel junction and crack formation, dehydration and irreversible thermal changes were observed during ablation. This study showed that there is great potential for near-IR imaging to monitor laser-ablation events in real-time to: assess safe laser operating parameters by imaging thermal and stress-induced damage, elaborate the mechanisms involved in ablation such as dehydration, and monitor the removal of demineralized enamel.

Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission

International Nuclear Information System (INIS)

Urbanczyk, A.; Hamhuis, G. J.; Noetzel, R.

2010-01-01

We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain recognition. This enables nanometer-scale precise lateral and vertical site registration between the QDs and the In nanocrystals and arrays in a single self-organizing formation process. The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum.

Effects of silicon-nitride passivation on the electrical behavior of 0.1-μm pseudomorphic high-electron-mobility transistors

International Nuclear Information System (INIS)

Oh, Jung-Hun; Sul, Woo-Suk; Han, Hyo-Jong; Jang, Hae-Kang; Son, Myung-Sik; Rhee, Jin-Koo; Kim, Sam- Dong

2004-01-01

We examine the effects of surface state formation due to silicon-nitride passivation on the electrical characteristics of GaAs-based 0.1-μm pseudomorphic high-electron-mobility transistors (pHEMTs). In this study, DC and noise characteristic are investigated before and after the passivation of the pHEMTs. After the passivation, we observe significant degradation of noise performance in the frequency range of 55 - 62 GHz. We also observe clear increases in the drain-source saturation current at a gate voltage of 0 V and in the extrinsic transconductance at a drain voltage of 1 V from 325 and 264 to 365 mA/mm and 304 mS/mm, respectively, with no significant variation in pinchoff voltage. We propose that the observed variations in the DC and the noise characteristics are due to the positively charged surface state after deposition of the silicon nitride passivation film. Hydrodynamic device model simulations were performed based upon the proposed mechanisms for the change in electrical behavior, and the calculated results show good agreement with the experimental results.

Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodes

International Nuclear Information System (INIS)

Schramm, A; Polojärvi, V; Hakkarainen, T V; Tukiainen, A; Guina, M

2011-01-01

We study effects of rapid thermal annealing on photoluminescence and electron confinement of InGaAs quantum posts by means of photoluminescence experiments and capacitance–voltage spectroscopy. The quantum posts are embedded in n-type Schottky diodes grown by molecular beam epitaxy on GaAs(1 0 0). The observed photoluminescence spectra arise from the quantum posts as well as from a contribution of a wetting-layer superlattice. With increasing annealing temperatures, the quantum-post photoluminescence blueshifts toward the wetting-layer superlattice, and upon the highest annealing step, the wetting-layer superlattice luminescence dominates. In capacitance–voltage experiments, we clearly observe a charge accumulation in the quantum-post layer as well as from the wetting-layer superlattice. Capacitance–voltage spectra and carrier-density profiles only experience slight changes upon annealing treatments. We suggest that the main electron accumulation takes place in the wetting-layer superlattice

Evaluation of fiber Bragg grating sensor interrogation using InGaAs linear detector arrays and Gaussian approximation on embedded hardware

Science.gov (United States)

Kumar, Saurabh; Amrutur, Bharadwaj; Asokan, Sundarrajan

2018-02-01

Fiber Bragg Grating (FBG) sensors have become popular for applications related to structural health monitoring, biomedical engineering, and robotics. However, for successful large scale adoption, FBG interrogation systems are as important as sensor characteristics. Apart from accuracy, the required number of FBG sensors per fiber and the distance between the device in which the sensors are used and the interrogation system also influence the selection of the interrogation technique. For several measurement devices developed for applications in biomedical engineering and robotics, only a few sensors per fiber are required and the device is close to the interrogation system. For these applications, interrogation systems based on InGaAs linear detector arrays provide a good choice. However, their resolution is dependent on the algorithms used for curve fitting. In this work, a detailed analysis of the choice of algorithm using the Gaussian approximation for the FBG spectrum and the number of pixels used for curve fitting on the errors is provided. The points where the maximum errors occur have been identified. All comparisons for wavelength shift detection have been made against another interrogation system based on the tunable swept laser. It has been shown that maximum errors occur when the wavelength shift is such that one new pixel is included for curve fitting. It has also been shown that an algorithm with lower computation cost compared to the more popular methods using iterative non-linear least squares estimation can be used without leading to the loss of accuracy. The algorithm has been implemented on embedded hardware, and a speed-up of approximately six times has been observed.

Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Science.gov (United States)

Xiao-Wen, Xi; Chang-Chun, Chai; Gang, Zhao; Yin-Tang, Yang; Xin-Hai, Yu; Yang, Liu

2016-04-01

The damage effect and mechanism of the electromagnetic pulse (EMP) on the GaAs pseudomorphic high electron mobility transistor (PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results. Project supported by the National Basic Research Program of China (Grant No. 2014CB339900), and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

Science.gov (United States)

Bhusal, L.; Freundlich, A.

2007-01-01

Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range

Energy Technology Data Exchange (ETDEWEB)

Gladyshev, A. G., E-mail: andrey.gladyshev@connector-optics.com; Novikov, I. I.; Karachinsky, L. Ya.; Denisov, D. V. [Connector Optics OOO (Russian Federation); Blokhin, S. A.; Blokhin, A. A.; Nadtochiy, A. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Kurochkin, A. S. [St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (Russian Federation); Egorov, A. Yu. [Connector Optics OOO (Russian Federation)

2016-09-15

The optical properties of elastically strained semiconductor heterostructures with InGaAs/InGaAlAs quantum wells (QWs), intended for use in the formation of the active region of lasers emitting in the spectral range 1520–1580 nm, are studied. Active regions with varied lattice mismatch between the InGaAs QWs and the InP substrate are fabricated by molecular beam epitaxy. The maximum lattice mismatch for the InGaAs QWs is +2%. The optical properties of the elastically strained InGaAlAs/InGaAs/InP heterostructures are studied by the photoluminescence method in the temperature range from 20 to 140°C at various power densities of the excitation laser. Investigation of the optical properties of InGaAlAs/InGaAs/InP experimental samples confirms the feasibility of using the developed elastically strained heterostructures for the fabrication of active regions for laser diodes with high temperature stability.

Analysis of self-organized In(Ga)As quantum structures with the scanning transmission electron microscope; Analyse selbstorganisierter In(Ga)As-Quantenstrukturen mit dem Raster-Transmissionselektronenmikroskop

Energy Technology Data Exchange (ETDEWEB)

Sauerwald, Andres

2008-05-27

Aim of this thesis was to apply the analytical methods of the scanning transmission electron microscopy to the study of self-organized In(Ga)As quantum structures. With the imaging methods Z contrast and bright field (position resolutions in the subnanometer range) and especially with the possibilities of the quantitative chemical EELS analysis of the scanning transmission electron microscope (STEM) fundamental questions concerning morphology and chemical properties of self-organized quantum structures should be answered. By the high position resolution of the STEM among others essentail morphological and structural parameters in the growth behaviour of 'dot in a well' (DWell) structures and of vertically correlated quantum dots (QDs) could be analyzed. For the optimization of DWell structures samples were studied, the nominal InAs-QD growth position was directedly varied within the embedding InGaAs quantum wells. The STEM offers in connection with the EELS method a large potential for the chemical analysis of quantum structures. Studied was a sample series of self-organized InGaAs/GaAs structures on GaAs substrate, the stress of which was changed by varying the Ga content of the INGaAs material between 2.4 % and 4.3 %. [German] Ziel dieser Arbeit war es, die analytischen Methoden der Raster-Transmissionselektronenmikroskopie zur Untersuchung selbstorganisierter In(Ga)As-Quantenstrukturen anzuwenden. Mit den abbildenden Methoden Z-Kontrast und Hellfeld (Ortsaufloesungen im Subnanometerbereich) und insbesondere mit den Moeglichkeiten der quantitativen chemischen EELS-Analyse des Raster-Transmissionselektronenmikroskops (RTEMs) sollten grundsaetzliche Fragestellungen hinsichtlich der Morphologie und der chemischen Eigenschaften selbstorganisierter Quantenstrukturen beantwortet werden. Durch die hohe Ortsaufloesung des RTEMs konnten u.a. essentielle morphologische und strukturelle Parameter im Wachstumsverhalten von 'Dot in a Well

Ultrafast laser-semiconductor interactions

International Nuclear Information System (INIS)

Schile, L.A.

1996-01-01

Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

Composition–dependent growth dynamics of selectively grown InGaAs nanowires

International Nuclear Information System (INIS)

Kohashi, Y; Hara, S; Motohisa, J

2014-01-01

We grew gallium-rich (x > 0.50) and indium-rich (x < 0.50) In 1 − x Ga x As nanowires by catalyst–free selective-area metal–organic vapor-phase epitaxy (SA-MOVPE), and compared their growth dynamics dependence on V/III ratio. It was found that the growth dynamics of In 1 − x Ga x As nanowires is clearly dependent on the alloy composition x. Specifically, for gallium–rich nanowire growth, the axial growth rate of nanowires initially increased with decreasing V/III ratio, and then started to decrease when the V/III ratio continued to decrease below a critical value. On the other hand, axial growth rate of indium-rich nanowires monotonically decreased with decreasing V/III ratio. In addition, the alloy composition was strongly dependent on the V/III ratio for gallium-rich nanowire growth, while it was relatively independent of the V/III ratio for indium-rich nanowire growth. We discuss the origin of dissimilarity in the growth dynamics dependence on V/III ratio between gallium-rich and indium-rich InGaAs nanowire growth, and conclude that it is due to the inherent dissimilarity between GaAs and InAs. Our finding provides important guidelines for achieving precise control of the diameter, height, and alloy composition of nanowires suitable for future nanowire-based electronics. (papers)

Continuous wave power scaling in high power broad area quantum cascade lasers

Science.gov (United States)

Suttinger, M.; Leshin, J.; Go, R.; Figueiredo, P.; Shu, H.; Lyakh, A.

2018-02-01

Experimental and model results for high power broad area quantum cascade lasers are presented. Continuous wave power scaling from 1.62 W to 2.34 W has been experimentally demonstrated for 3.15 mm-long, high reflection-coated 5.6 μm quantum cascade lasers with 15 stage active region for active region width increased from 10 μm to 20 μm. A semi-empirical model for broad area devices operating in continuous wave mode is presented. The model uses measured pulsed transparency current, injection efficiency, waveguide losses, and differential gain as input parameters. It also takes into account active region self-heating and sub-linearity of pulsed power vs current laser characteristic. The model predicts that an 11% improvement in maximum CW power and increased wall plug efficiency can be achieved from 3.15 mm x 25 μm devices with 21 stages of the same design but half doping in the active region. For a 16-stage design with a reduced stage thickness of 300Å, pulsed roll-over current density of 6 kA/cm2 , and InGaAs waveguide layers; optical power increase of 41% is projected. Finally, the model projects that power level can be increased to 4.5 W from 3.15 mm × 31 μm devices with the baseline configuration with T0 increased from 140 K for the present design to 250 K.

Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities

DEFF Research Database (Denmark)

Reitzenstein, S.; Schneider, C.; Albert, F.

2011-01-01

Semiconductor quantum dots (QDs) are fascinating nanoscopic structures for photonics and future quantum information technology. However, the random position of self-organized QDs inhibits a deterministic coupling in devices relying on cavity quantum electrodynamics (cQED) effects which complicates......, e.g., the large scale fabrication of quantum light sources. As a result, large efforts focus on the growth and the device integration of site-controlled QDs. We present the growth of low density arrays of site-controlled In(Ga)As QDs where shallow etched nanoholes act as nucleation sites...... linewidth, the oscillator strength and the quantum efficiency. A stacked growth of strain coupled SCQDs forming on wet chemically etched nanoholes provide the smallest linewidth with an average value of 210 μeV. Using time resolved photoluminescence studies on samples with a varying thickness of the capping...

Indium and gallium diffusion through zirconia in the TiN/ZrO{sub 2}/InGaAs stack

Energy Technology Data Exchange (ETDEWEB)

Ceballos-Sanchez, O. [CINVESTAV-Unidad Queretaro, Queretaro, Qro. 76230 (Mexico); Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Martinez, E.; Guedj, C.; Veillerot, M. [Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Herrera-Gomez, A. [CINVESTAV-Unidad Queretaro, Queretaro, Qro. 76230 (Mexico)

2015-06-01

Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS) was applied to the TiN/ZrO{sub 2}/InGaAs stack to assess its thermal stability. Through a robust ARXPS analysis, it was possible to observe subtle effects such as the thermally induced diffusion of substrate atomic species (In and Ga) through the dielectric layer. The detailed characterization of the film structure allowed for assessing the depth profiles of the diffused atomic species by means of the scenarios-method. Since the quantification for the amount of diffused material was done at different temperatures, it was possible to obtain an approximate value of the activation energy for the diffusion of indium through zirconia. The result is very similar to the previously reported values for indium diffusion through alumina and through hafnia.

Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

Energy Technology Data Exchange (ETDEWEB)

Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M. [Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Tang, K.; Ahn, J.; McIntyre, P. C. [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

2015-08-07

The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

InAlAs/InGaAs Pseudomorphic High Eelectron Mobility Transistors Grown by Molecular Beam Epitaxy on the InP Substrate

International Nuclear Information System (INIS)

Huang Jie; Guo Tian-Yi; Zhang Hai-Ying; Xu Jing-Bo; Fu Xiao-Jun; Yang Hao; Niu Jie-Bin

2010-01-01

A novel PMMA/PMGI/ZEP520 trilayer resist electron beam lithograph (EBL) technology is successfully developed and used to fabricate the 150 nm gate-length In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As Pseudomorphic HEMT on an InP substrate, of which the material structure is successfully designed and optimized. A perfect profile of T-gate is successfully obtained. These fabricated devices demonstrate excellent dc and rf characteristics: the transconductance G m , maximum saturation drain-to-source current I DSS , threshold voltage V T , maximum current gain frequency f T derived from h 21 , maximum frequency of oscillation derived from maximum available power gain/maximum stable gain and from unilateral power-gain of metamorphic InGaAs/InAlAs high electron mobility transistors (HEMTs) are 470 mS/mm, 560 mA/mm, −1.0 V, 76 GHz, 135 GHz and 436 GHz, respectively. The excellent high frequency performances promise the possibility of metamorphic HEMTs for millimeter-wave applications. (cross-disciplinary physics and related areas of science and technology)

Catastrophic optical bulk degradation in high-power single- and multi-mode InGaAs-AlGaAs strained QW lasers: part II

Science.gov (United States)

Sin, Yongkun; Ayvazian, Talin; Brodie, Miles; Lingley, Zachary

2018-03-01

High-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers are critical components for both terrestrial and space satellite communications systems. Since these lasers predominantly fail by catastrophic and sudden degradation due to catastrophic optical damage (COD), it is especially crucial for space satellite applications to investigate reliability, failure modes, precursor signatures of failure, and degradation mechanisms of these lasers. Our group reported a new failure mode in MM and SM InGaAs-AlGaAs strained QW lasers in 2009 and 2016, respectively. Our group also reported in 2017 that bulk failure due to catastrophic optical bulk damage (COBD) is the dominant failure mode of both SM and MM lasers that were subject to long-term life-tests. For the present study, we continued our physics of failure investigation by performing long-term life-tests followed by failure mode analysis (FMA) using nondestructive and destructive micro-analytical techniques. We performed long-term accelerated life-tests on state-of-the-art SM and MM InGaAs- AlGaAs strained QW lasers under ACC mode. Our life-tests have accumulated over 25,000 test hours for SM lasers and over 35,000 test hours for MM lasers. We first employed electron beam induced current (EBIC) technique to identify failure modes of degraded SM lasers by observing dark line defects. All the SM failures that we studied showed catastrophic and sudden degradation and all of these failures were bulk failures. Since degradation mechanisms responsible for COBD are still not well understood, we also employed other techniques including focused ion beam (FIB) and high-resolution TEM to further study dark line defects and dislocations in post-aged lasers. Keywor

Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

Science.gov (United States)

Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

2015-12-01

The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

Wavelength Selection For Laser Raman Spectroscopy of Putative Martian Habitats and Biomolecules

Science.gov (United States)

Wynn-Williams, D. D.; Newton, E. M. G.; Edwards, H. G. M.

Pigments are key potential biomarkers for any former life on Mars because of the selective pressure of solar radiation on any biological system that could have evolved at its surface. We have found that the near -Infrared laser Raman spectrometer available to use was eminently suitable for diagnostic analysis of pigments because of their minimal autofluorescence at its 1064 nm excitation wav elength. However, we have now evaluated a diverse range of excitation wavelengths to confirm this choice, to ensure that we have the best technique to seek for pigments and their derivatives from any former surface life on Mars. The Raman is weak relative to fluorescence, which results in elevated baseline and concurrent swamping of Raman bands. We confirm the molecular information available from near-IR FT Raman spectra for two highly pigmented UV-tolerant epilithic Antarctic lichens (Acarospora chlorop hana and Caloplaca saxicola) from Victoria Land, a whole endolithic microbial community and endolithic cyanobacterium Chroococcidiopsis from within translucent sandstone of the Trans -Antarctic Mountains, and the free- living cyanobacterium Nostoc commune from Alexander Island, Antarctic Peninsula region. We also show that much of the information we require on biomolecules is not evident from lasers of shorter wavelengths. A miniature 1064 nm Raman spectrometer with an In-Ga-As detector sensitive to IR is being developed by Montana State University (now existing as a prototype) as the prime instrument for a proposed UK-led Mars rover mission (Vanguard). Preliminary spectra from this system confirm the suitability of the near-IR laser.

Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

International Nuclear Information System (INIS)

Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T; Song, A M

2009-01-01

In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

Energy Technology Data Exchange (ETDEWEB)

Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T [Departamento de Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain); Song, A M, E-mail: indy@usal.e [School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD (United Kingdom)

2009-11-15

In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

Luminescence Imaging Strategies for Drone-Based PV Array Inspection

DEFF Research Database (Denmark)

Benatto, Gisele Alves dos Reis; Riedel, Nicholas; Mantel, Claire

2017-01-01

) acquisition under natural light conditions during several times of the day, under high sun irradiation, to unveil the sunlight noise characteristics towards an InGaAs detector. In order to bring more freedom to a drone-based inspection, we also show the preliminary results of a laser-line based...

Optical and electronic properties of InGaAs and nitride quantum dots

Energy Technology Data Exchange (ETDEWEB)

Baer, N.

2006-06-15

In the present thesis, the electronic and optical properties of such nanostructures have been investigated for the well established III-V and the new group-III nitride material system. The influence of Coulomb correlations on the optical spectra of InGaAs QDs are studied using a full configuration interaction approach. The resulting multi-exciton spectra for up to twelve excitons are investigated in detail. Characteristic features of the spectra are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Additionally, we study the electronic and optical properties of self-assembled InN/GaN quantum dots. The existence of an exactly degenerate p-shell is discussed in detail. Dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for configuration interaction calculations. We present multi-exciton emission spectra and investigate how Coulomb correlations and oscillator strengths are altered by the built-in electrostatic fields present in these structures. From our results, we predict vanishing exciton and biexciton ground state emission for small lens-shaped dots, which is explained by a careful analysis of the underlying symmetry group. To study the photoluminescence dynamics of an initially excited QD system, we employ a microscopic semiconductor theory. Carrier-carrier correlations beyond the Hartee-Fock level are included within a cluster expansion truncation scheme up to the singlet-doublet level. The influence of these correlations on the spectrum and the photoluminescence dynamics is investigated for the emission into free space as well as for QDs embedded in an optical microcavity. (orig.)

Optical and electronic properties of InGaAs and nitride quantum dots

International Nuclear Information System (INIS)

Baer, N.

2006-06-01

In the present thesis, the electronic and optical properties of such nanostructures have been investigated for the well established III-V and the new group-III nitride material system. The influence of Coulomb correlations on the optical spectra of InGaAs QDs are studied using a full configuration interaction approach. The resulting multi-exciton spectra for up to twelve excitons are investigated in detail. Characteristic features of the spectra are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Additionally, we study the electronic and optical properties of self-assembled InN/GaN quantum dots. The existence of an exactly degenerate p-shell is discussed in detail. Dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for configuration interaction calculations. We present multi-exciton emission spectra and investigate how Coulomb correlations and oscillator strengths are altered by the built-in electrostatic fields present in these structures. From our results, we predict vanishing exciton and biexciton ground state emission for small lens-shaped dots, which is explained by a careful analysis of the underlying symmetry group. To study the photoluminescence dynamics of an initially excited QD system, we employ a microscopic semiconductor theory. Carrier-carrier correlations beyond the Hartee-Fock level are included within a cluster expansion truncation scheme up to the singlet-doublet level. The influence of these correlations on the spectrum and the photoluminescence dynamics is investigated for the emission into free space as well as for QDs embedded in an optical microcavity. (orig.)

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

International Nuclear Information System (INIS)

Yu Xin-Hai; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Xi Xiao-Wen

2015-01-01

The high power microwave (HPM) damage effect on the AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ −0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy (SEM) illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device burn-out and the location beneath the gate near the source side is most susceptible to burn-out, which is in accordance with the simulated results. (paper)

Power scaling and experimentally fitted model for broad area quantum cascade lasers in continuous wave operation

Science.gov (United States)

Suttinger, Matthew; Go, Rowel; Figueiredo, Pedro; Todi, Ankesh; Shu, Hong; Leshin, Jason; Lyakh, Arkadiy

2018-01-01

Experimental and model results for 15-stage broad area quantum cascade lasers (QCLs) are presented. Continuous wave (CW) power scaling from 1.62 to 2.34 W has been experimentally demonstrated for 3.15-mm long, high reflection-coated QCLs for an active region width increased from 10 to 20 μm. A semiempirical model for broad area devices operating in CW mode is presented. The model uses measured pulsed transparency current, injection efficiency, waveguide losses, and differential gain as input parameters. It also takes into account active region self-heating and sublinearity of pulsed power versus current laser characteristic. The model predicts that an 11% improvement in maximum CW power and increased wall-plug efficiency can be achieved from 3.15 mm×25 μm devices with 21 stages of the same design, but half doping in the active region. For a 16-stage design with a reduced stage thickness of 300 Å, pulsed rollover current density of 6 kA/cm2, and InGaAs waveguide layers, an optical power increase of 41% is projected. Finally, the model projects that power level can be increased to ˜4.5 W from 3.15 mm×31 μm devices with the baseline configuration with T0 increased from 140 K for the present design to 250 K.

Intrinsic and environmental effects on the interference properties of a high-performance quantum dot single-photon source

DEFF Research Database (Denmark)

Gerhardt, Stefan; Iles-Smith, Jake; McCutcheon, Dara

2018-01-01

We report a joint experimental and theoretical study of the interference properties of a single-photon source based on a In(Ga)As quantum dot embedded in a quasiplanar GaAs microcavity. Using resonant laser excitation with a pulse separation of 2 ns, we find near-perfect interference of the emitt...... in excitonic Rabi oscillations....

Ultra-Low Noise Quad Photoreceiver for Space Based Laser Interferometric Gravity Wave Detection, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — We propose to design and develop 2x2 quad p-i-n InGaAs Photoreceivers having the following characteristics: (a) Active area diameter 0.75 mm; (b) Wavelength coverage...

Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

Energy Technology Data Exchange (ETDEWEB)

Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T., E-mail: tobias.heindel@tu-berlin.de; Reitzenstein, S. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623 (Germany); Gaafar, M.; Vaupel, M.; Stolz, W.; Rahimi-Iman, A.; Koch, M. [Department of Physics and Materials Science Center, Philipps-Universität Marburg, 35032 Marburg (Germany)

2015-07-27

We report on the realization of a quantum dot (QD) based single-photon source with a record-high single-photon emission rate. The quantum light source consists of an InGaAs QD which is deterministically integrated within a monolithic microlens with a distributed Bragg reflector as back-side mirror, which is triggered using the frequency-doubled emission of a mode-locked vertical-external-cavity surface-emitting laser (ML-VECSEL). The utilized compact and stable laser system allows us to excite the single-QD microlens at a wavelength of 508 nm with a pulse repetition rate close to 500 MHz at a pulse width of 4.2 ps. Probing the photon statistics of the emission from a single QD state at saturation, we demonstrate single-photon emission of the QD-microlens chip with g{sup (2)}(0) < 0.03 at a record-high single-photon flux of (143 ± 16) MHz collected by the first lens of the detection system. Our approach is fully compatible with resonant excitation schemes using wavelength tunable ML-VECSELs, which will optimize the quantum optical properties of the single-photon emission in terms of photon indistinguishability.

Design, Construction and Calibration of a Near-Infrared Four-Color Pyrometry System for Laser-Driven High Pressure Experiments

Science.gov (United States)

Ali, S. J.; Jeanloz, R.; Collins, G.; Spaulding, D. K.

2010-12-01

Current dynamic compression experiments, using both quasi-isentropic and shock-compression, allow access to pressure-temperature states both on and off the principle Hugoniot and over a wide range of conditions of direct relevance to planetary interiors. Such studies necessitate reliable temperature measurements below 4000-5000 K. Such relatively low temperature states are also of particular interest for materials such as methane and water that do not experience much heating under shock compression. In order to measure these temperatures as a function of time across the sample, a four-color, near-infrared pyrometry system is being developed for use at the Janus laser facility (LLNL) with channels at wavelengths of 932nm-1008nm, 1008nm-1108nm, 1108nm-1208nm, and 1208nm-1300nm. Each color band is fiber-coupled to an InGaAs PIN photodiode with a rise time of less than 60 ps, read using an 18 GHz oscilloscope in order to ensure time resolutions of under 200 ps. This will allow for high temporal resolution measurements of laser-driven shock compression experiments with total durations of 5-15 ns as well as correlation with simultaneous time-resolved velocity interferometry and visual-wavelength pyrometry. Calibration of the system is being accomplished using quartz targets, as the EOS for quartz is well known, along with a calibrated integrating sphere of known spectral radiance.

Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale.

Science.gov (United States)

Wu, Xing; Luo, Chen; Hao, Peng; Sun, Tao; Wang, Runsheng; Wang, Chaolun; Hu, Zhigao; Li, Yawei; Zhang, Jian; Bersuker, Gennadi; Sun, Litao; Pey, Kinleong

2018-01-01

The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The high-speed property gives the light-emitting diodes a high response speed and low dark current, and they are widely used in communications, infrared remote sensing, optical detection, and other fields. The rational design of high-performance devices requires a detailed understanding of the electronic structure at this interface; however, this understanding remains a challenge, given the complex nature of surface interactions and the dynamic relationship between the morphology evolution and electronic structures. Herein, in situ transmission electron microscopy is used to probe and manipulate the structural and electrical properties of ZrO 2 films on Al 2 O 3 and InGaAs substrate at the atomic scale. Interfacial defects resulting from the spillover of the oxygen-atom conduction-band wavefunctions are resolved. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

Energy Technology Data Exchange (ETDEWEB)

Sokolov, N. S., E-mail: nsokolov@fl.ioffe.ru; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Maksimova, K. Yu.; Grunin, A. I. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Tabuchi, M. [Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603 (Japan)

2016-01-14

Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

International Nuclear Information System (INIS)

Sokolov, N. S.; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V.; Maksimova, K. Yu.; Grunin, A. I.; Tabuchi, M.

2016-01-01

Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y 3 Fe 5 O 12 (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films

Broadband upconversion imaging around 4 µm using an all-fiber supercontinuum source

DEFF Research Database (Denmark)

Huot, Laurent; Moselund, Peter M.; Leick, Lasse

2017-01-01

. The infrared signal is passed through a sample and then focused into a bulk AgGaS2 crystal and subsequently mixed with a synchronous mixing signal at 1550 nm extracted from the pump laser of the supercontinuum. Through sum frequency generation, an upconverted signal ranging from 1030 nm to 1155 nm is generated...... and acquired using an InGaAs camera....

Growth and properties of In(Ga)As nanowires on silicon

International Nuclear Information System (INIS)

Hertenberger, Simon

2012-01-01

properties and homogeneous array-like characteristics. High vertical growth yields of 90 % are achieved on substrates patterned either by e-beam lithography (for small scale arrays) or nanoimprint lithography (NIL, for large scale arrays > 5 x 5 mm 2 ). In addition, X-ray rocking curve measurements evidence very low crystal tilt and perfect vertical alignment along the (111) direction with full widths at half maximum (FWHM) as low as 0.6 . Furthermore, systematic investigations of the size scaling behavior as a function of the pitch (interwire distance) highlight the existence of two growth regimes: (i) a competitive growth regime for narrow pitches and (ii) a diffusion-limited regime for wider pitches, where growth is limited by the diffusion length of In adatoms on the SiO 2 surface (∝750 nm at T=480 C). Furthermore, the growth of ternary InGaAs nanowires on sputter-deposited SiO x /Si(111) and NIL-patterned SiO 2 /Si(111) substrates is investigated. Here, composition tuning with Ga contents ranging from 0-60 % was achieved as confirmed by X-ray diffraction and energy dispersive X-ray spectroscopy. Furthermore, the two different growth strategies are compared yielding a significantly lower FWHM of the 2θ-XRD-peak in the case of NIL-patterned substrates (0.031 ) as compared to self-assembled grown nanowires (0.084 ). This finding is further supported by Raman spectroscopy showing lower longitudinal optical to transversal optical (LO/TO) intensity ratios and lower LO-FWHM for both the InAs-like and GaAs-like LO modes in the case of NIL-patterned nanowire growth. These observations indicate superior composition homogeneity for positioned nanowire growth on patterned substrates. In addition, low-T photoluminescence (PL) measurements are presented showing band gap tuning over a wavelength range of ∝1800-2850 nm where PL peak linewidths are as narrow as ∝30 meV, independent of the Ga content. Finally, the effect of growth parameters on the microstructure are investigated

Growth and properties of In(Ga)As nanowires on silicon

Energy Technology Data Exchange (ETDEWEB)

Hertenberger, Simon

2012-10-15

nanowire properties and homogeneous array-like characteristics. High vertical growth yields of 90 % are achieved on substrates patterned either by e-beam lithography (for small scale arrays) or nanoimprint lithography (NIL, for large scale arrays > 5 x 5 mm{sup 2}). In addition, X-ray rocking curve measurements evidence very low crystal tilt and perfect vertical alignment along the (111) direction with full widths at half maximum (FWHM) as low as 0.6 . Furthermore, systematic investigations of the size scaling behavior as a function of the pitch (interwire distance) highlight the existence of two growth regimes: (i) a competitive growth regime for narrow pitches and (ii) a diffusion-limited regime for wider pitches, where growth is limited by the diffusion length of In adatoms on the SiO{sub 2} surface (∝750 nm at T=480 C). Furthermore, the growth of ternary InGaAs nanowires on sputter-deposited SiO{sub x}/Si(111) and NIL-patterned SiO{sub 2}/Si(111) substrates is investigated. Here, composition tuning with Ga contents ranging from 0-60 % was achieved as confirmed by X-ray diffraction and energy dispersive X-ray spectroscopy. Furthermore, the two different growth strategies are compared yielding a significantly lower FWHM of the 2θ-XRD-peak in the case of NIL-patterned substrates (0.031 ) as compared to self-assembled grown nanowires (0.084 ). This finding is further supported by Raman spectroscopy showing lower longitudinal optical to transversal optical (LO/TO) intensity ratios and lower LO-FWHM for both the InAs-like and GaAs-like LO modes in the case of NIL-patterned nanowire growth. These observations indicate superior composition homogeneity for positioned nanowire growth on patterned substrates. In addition, low-T photoluminescence (PL) measurements are presented showing band gap tuning over a wavelength range of ∝1800-2850 nm where PL peak linewidths are as narrow as ∝30 meV, independent of the Ga content. Finally, the effect of growth parameters on the

Growth of strained, ferroelectric NaNbO{sub 3} thin films by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Sellmann, Jan; Schwarzkopf, Jutta; Duk, Andreas; Kwasniewski, Albert; Schmidbauer, Martin; Fornari, Roberto [IKZ, Berlin (Germany)

2012-07-01

Due to its promising ferro-/piezoelectric properties and high Curie temperature NaNbO{sub 3} has attracted much attention. In contrast to bulk crystals, thin epitaxial films may incorporate and maintain a certain compressive or tensile lattice strain, depending on the used substrate/film combination. This deformation of the crystal lattice is known to strongly influence the ferroelectric properties of perovskites. In the case of NaNbO{sub 3} compressive strain is achieved in films deposited on NdGaO{sub 3} and SrTiO{sub 3} substrates while deposition on DyScO{sub 3} and TbScO{sub 3} leads to tensile in-plane strain. In order to characterize and practically apply the ferroelectric films, it is necessary to embed them in a capacitor structure for which we use pseudomorphically grown SrRuO{sub 3} as bottom electrodes. We report on the deposition of SrRuO{sub 3} and NaNbO{sub 3} single layers on SrTiO{sub 3}, DyScO{sub 3}, TbScO{sub 3} and NbGaO{sub 3} substrates by means of pulsed laser deposition. By adjusting the substrate temperature, the oxygen partial pressure and the laser frequency we have successfully deposited smooth, strained, single phase NaNbO{sub 3} thin films. Investigations of the films by atomic force microscopy and high resolution X-ray diffraction reveal the dependence of the surface morphology and the incorporated lattice strain on the deposition parameters and the lattice mismatch, respectively. All films exhibit piezoelectric properties, as proven by piezoresponse force microscopy.

Diode-pumped Yb:Sr5(PO4)3F laser performance

International Nuclear Information System (INIS)

Marshall, C.D.; Payne, S.A.; Smith, L.K.

1995-01-01

The performance of the first diode-pumped Yb 3+ -doped Sr 5 (PO 4 ) 3 F (Yb:S-FAP) laser is discussed. We found the pumping dynamics and extraction cross-sections of Yb:S-FAP crystals to be similar to those previously inferred by purely spectroscopic techniques. The saturation fluence for pumping was measured to be 2.2 J/cm 2 using three different methods based on either the spatial, temporal, or energy transmission properties of a Yb:S-FAP rod. The small signal gain implies an emission cross section of 6.0 x 10 -20 cm 2 that falls within error bars of the previously reported value of 7.3 x 10 -20 cm 2 , obtained from spectroscopic techniques. Up to 1.7 J/cm 3 of stored energy density was achieved in a 6 x 6 x 44 mm Yb:S-FAP amplifier rod. An InGaAs diode array has been fabricated that has suitable specifications for pumping a 3 x 3 x 30 mm Yb:S-FAP rod. In a free running configuration diode-pumped slope efficiencies up to 43% were observed with output energies up to ∼0.5 J per 1 ms pulse. When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz and 500 μs pulses

High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

Energy Technology Data Exchange (ETDEWEB)

Sanz-Hervas, A.; Aguilar, M. [Madrid, Univ. (Spain). Dept. Tecnologia Electronica. E.T.S.I. Telecomunicacion; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J. [Valladolid, Real de Burgos Univ. (Spain). Dept. Teoria de la Senal u Comunicaciones e Ingegneria Telematica. E.T.S.I. Telecomunicacion; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E. [Madrid, Univ. (Spain). Dept. Ingegnieria Electronica. E.T.S.I. Telecomunicacion

1997-02-01

In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224{+-} reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies.

High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

International Nuclear Information System (INIS)

Sanz-Hervas, A.; Aguilar, M.; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J.; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E.

1997-01-01

In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224± reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies

Nano-scale observations of interface between lichen and basaltic rock: Pseudomorphic growth of amorphous silica on augite

Science.gov (United States)

Tamura, T.; Kyono, A.; Kebukawa, Y.; Takagi, S.

2017-12-01

during metabolism, the amorphous silica multilayers observed at the interface were produced by mineral dissolution induced by the lichen, and formed as a pseudomorphic replacement of augite by amorphous silica.

Anisotropic Transport of Electrons in a Novel FET Channel with Chains of InGaAs Nano-Islands Embedded along Quasi-Periodic Multi-Atomic Steps on Vicinal (111)B GaAs

International Nuclear Information System (INIS)

Akiyama, Y.; Kawazu, T.; Noda, T.; Sakaki, H.

2010-01-01

We have studied electron transport in n-AlGaAs/GaAs heterojunction FET channels, in which chains of InGaAs nano-islands are embedded along quasi-periodic steps. By using two samples, conductance G para (V g ) parallel to the steps and G perp (V g ) perpendicular to them were measured at 80 K as functions of gate voltage V g . At sufficiently high V g , G para at 80 K is several times as high as G perp , which manifests the anisotropic two-dimensional transport of electrons. When V g is reduced to -0.7 V, G perp almost vanishes, while Gpara stays sizable unless V g is set below -0.8 V. These results indicate that 'inter-chain' barriers play stronger roles than 'intra-chain' barriers.

Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain

International Nuclear Information System (INIS)

Kim, Jeonghee; Laurent, Matthew A.; Li, Haoran; Lal, Shalini; Mishra, Umesh K.

2015-01-01

This letter reports the influence of the added InGaN interlayer on reducing the inherent interfacial barrier and hence improving the electrical characteristics of wafer-bonded current aperture vertical electron transistors consisting of an InGaAs channel and N-polar GaN drain. The current-voltage characteristics of the transistors show that the implementation of N-polar InGaN interlayer effectively reduces the barrier to electron transport across the wafer-bonded interface most likely due to its polarization induced downward band bending, which increases the electron tunneling probability. Fully functional wafer-bonded transistors with nearly 600 mA/mm of drain current at V GS  = 0 V and L go  = 2 μm have been achieved, and thus demonstrate the feasibility of using wafer-bonded heterostructures for applications that require active carrier transport through both materials

Update on diode-pumped solid-state laser experiments for inertial fusion energy

International Nuclear Information System (INIS)

Marshall, C.; Smith, L.; Payne, S.

1994-01-01

The authors have completed the initial phase of the diode-pumped solid-state laser (DPSSL) experimental program to validate the expected pumping dynamics and extraction cross-sections of Yb 3+ -doped Sr 5 (PO 4 ) 3 F (Yb:S-FAP) crystals. Yb:S-FAP crystals up to 25 x 25 x 175 mm in size have been grown for this purpose which have acceptable loss characteristics ( 2 ). The saturation fluence for pumping has been measured to be 2.2 J/cm 2 using three different methods based on either the spatial, temporal, or energy transmission properties of a Yb:S-FAP rod. The small signal gain under saturated pumping conditions was measured. These measurements imply an emission cross section of 6.0 x 10 -20 cm 2 that falls within error bars of the previously reported value of 7.3 x 10 -20 cm 2 , obtained from purely spectroscopic techniques. The effects of radiation trapping on the emission lifetime have been quantified. The long lifetime of Yb:S-FAP has beneficial effects for diode-pumped amplifier designs, relative to materials with equivalent cross sections but shorter lifetimes, in that less peak pump intensity is required (thus lower diode costs) and that lower spontaneous emission rates lead to a reduction in amplified spontaneous emission. Consequently, up to 1.7 J/cm 3 of stored energy density was achieved in a 6x6x44 mm Yb:S-FAP amplifier rod; this stored energy density is large relative to typical flashlamp-pumped Nd:glass values of 0.3 to 0.5 J/cm 3 . A 2.4 kW peak power InGaAs diode array has been fabricated by Beach, Emanuel, and co-workers which meets the central wavelength, bandwidth, and energy specifications for the author's immediate experiments. These results further increase their optimism of being able to produce a ∼ 10% efficient diode-pumped solid state laser for inertial fusion energy

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

Science.gov (United States)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

2015-05-01

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, Pmax was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

International Nuclear Information System (INIS)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

2015-01-01

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P max was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs

New solid laser: Ceramic laser. From ultra stable laser to ultra high output laser

International Nuclear Information System (INIS)

Ueda, Kenichi

2006-01-01

An epoch-making solid laser is developed. It is ceramic laser, polycrystal, which is produced as same as glass and shows ultra high output. Ti 3+ :Al 2 O 3 laser crystal and the CPA (chirped pulse amplification) technique realized new ultra high output lasers. Japan has developed various kinds of ceramic lasers, from 10 -2 to 67 x 10 3 w average output, since 1995. These ceramic lasers were studied by gravitational radiation astronomy. The scattering coefficient of ceramic laser is smaller than single crystals. The new fast ignition method is proposed by Institute of Laser Engineering of Osaka University, Japan. Ultra-intense short pulse laser can inject the required energy to the high-density imploded core plasma within the core disassembling time. Ti 3+ :Al 2 O 3 crystal for laser, ceramic YAG of large caliber for 100 kW, transparent laser ceramic from nano-crystals, crystal grain and boundary layer between grains, the scattering coefficient of single crystal and ceramic, and the derived release cross section of Yb:YAG ceramic are described. (S.Y.)

Laser illumination and EO systems for covert surveillance from NIR to SWIR and beyond

Science.gov (United States)

Dvinelis, Edgaras; Žukauskas, Tomas; Kaušylas, Mindaugas; Vizbaras, Augustinas; Vizbaras, Kristijonas; Vizbaras, Dominykas

2016-10-01

One of the most important factor of success in battlefield is the ability to remain undetected by the opposing forces while also having an ability to detect all possible threats. Illumination and pointing systems working in NIR and SWIR bands are presented. Wavelengths up to 1100 nm can be registered by newest generation image intensifier tubes, CCD and EMCCD sensors. Image intensifier tubes of generation III or older are only limited up to wavelength of 900 nm [1]. Longer wavelengths of 1550 nm and 1625 nm are designed to be used with SWIR electro-optical systems and they cannot be detected by any standard night vision system. Long range SWIR illuminators and pointers have beam divergences down to 1 mrad and optical powers up to 1.5 W. Due to lower atmospheric scattering SWIR illuminators and pointers can be used at extremely long distances up to 10s of km and even further during heavy weather conditions. Longer wavelengths of 2100 nm and 2450 nm are also presented, this spectrum band is of great interest for direct infrared countermeasure (DIRCM) applications. State-of-the-art SWIR and LWIR electro-optical systems are presented. Sensitive InGaAs sensors coupled with "fast" (low F/#) optical lenses can provide complete night vision, detection of all NIR and SWIR laser lines, penetration through smoke, dust and fog. Finally beyond-state-of-the-art uncooled micro-bolometer LWIR systems are presented featuring ultra-high sensor sensitivities of 20 mK.

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

Energy Technology Data Exchange (ETDEWEB)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

2015-05-15

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

Growth of strained InGaAs/GaAs quantum wells and index guided injection lasers over nonplanar substrates by molecular beam epitaxy

International Nuclear Information System (INIS)

Arent, D.J.; Galeuchet, Y.D.; Nilsson, S.; Meier, H.P.

1990-01-01

Strained InGaAs/GaAs quantum wells were grown on nonplanar substrates by molecular beam epitaxy and studied by scanning electron microscopy and low temperature spatially and spectrally resolved cathodoluminescence spectroscopy. For (100) ridges and grooves formed with (311)A sidewalls, almost complete removal of In from the strained quantum wells on the (311)A facet is observed. Corresponding increases of In content in the quantum wells grown on the (100) facets indicate that most if not all of the In is displaced from the (311)A facet via interplanar adatom migration. Ga adatom migration is also observed under our growth conditions such that quantum wells grown nominally near the critical layer thickness on structures less than ≅2.5 μm wide are no longer pseudomorphically strained, as detected by luminescence linewidth analysis. We present the first results of strained InGaAs/GaAs index guided injection lasers grown by single-step molecular beam epitaxy over nonplanar substrates and show that differences greater than 50 meV in the effective band gap of a 70 A quantum well can be achieved between the gain region and the nonabsorbing waveguide without relaxing the strain. Room temperature threshold currents as low as 6 mA for 4 μmx750 μm uncoated devices lasing continuously at a wavelength of 1.01 μm have been achieved

Infrared focal plane array producibility and related materials; Proceedings of the Meeting, Orlando, FL, Apr. 20, 21, 1992

Science.gov (United States)

Balcerak, Ray; Pellegrini, Paul W.; Scribner, Dean A.

The present conference discusses the commercial diversification of the U.S. IR detector industry's commercial diversification, HgCdTe focal-plane array (FPAs) manufacture, LPE of (Hg,Cd)Te FPAs, uncooled IR FPA detector producibility, a high performance staring IR camera, and novel technologies for FPA dewars. Also discussed are hybridizing FPAs, cryoprober test development, HgCdTe on Si for monolithic focal plane arrays, popcorn noise in linear InGaAs detector arrays, and the use of narrowband laser speckle for MTF characterization of CCDs. (No individual items are abstracted in this volume)

The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

International Nuclear Information System (INIS)

Kent, Tyler; Edmonds, Mary; Kummel, Andrew C.; Tang, Kechao; Negara, Muhammad Adi; McIntyre, Paul; Chobpattana, Varistha; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi

2015-01-01

Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C max hypothesized to be a result of poor nucleation of HfO 2 on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D it high C ox MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared

Effects of a finite melt on the thickness and composition of liquid phase epitaxial InGaAsP and InGaAs layers grown by the diffusion-limited step-cooling technique

International Nuclear Information System (INIS)

Cook, L.W.; Tashima, M.M.; Stillman, G.E.

1980-01-01

The thickness of InGaAsP (lambda/sub g/=1.15 μm) and InGaAs (lambda/sub g/=1.68 μm) liquid phase epitaxial layers grown on (100) InP substrates by the step-cooling technique has been measured as a function of growth time. (lambda/sub g/ is defined as the wavelength corresponding to the energy gap of the epitaxial layer.) For growth times much less than the shortest diffusion time tau/sub i/=l 2 /D/sub i/ of the melt constituents, where l is the melt height and D/sub i/ is the diffusivity of each component in the melt, the thickness is consistent with diffusion-limited theory, and the composition is constant. The time at which the growth rate deviates sharply from diffusion-limited theory and beyond which constant composition growth can no longer be maintained has been determined for the melt size used in our experiments and can be estimated for any melt size

Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

Energy Technology Data Exchange (ETDEWEB)

Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

2000-04-01

Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

Characteristic of doping and diffusion of heavily doped n and p type InP and InGaAs epitaxial layers grown by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Pinzone, C.J.; Dupuis, R.D.; Ha, N.T.; Luftman, H.S.; Gerrard, N.D.

1990-01-01

Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material. In this study, N-type doping above 10 19 cm -3 has been achieved in InP and InGaAs using Sn as a dopant. P-type Zn doping at these levels has also been achieved in these materials but p type activation above ∼3 x 10 18 cm -3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

Science.gov (United States)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Lasers '89

International Nuclear Information System (INIS)

Harris, D.G.; Shay, T.M.

1990-01-01

This book covers the following topics: XUV, X-Ray and Gamma-Ray Lasers, excimer lasers, chemical lasers, nuclear pumped lasers, high power gas lasers, solid state lasers, laser spectroscopy. The paper presented include: Development of KrF lasers for fusion and Nuclear driven solid-state lasers

Magnetic domains in epitaxial (100) Fe thin films

International Nuclear Information System (INIS)

Florczak, J.M.; Dahlberg, E.D.; Ryan, P.J.; White, R.M.; Kuznia, J.N.; Wowchak, A.M.; Cohen, P.I.

1989-01-01

This paper discusses the investigation of the domain patterns of thin Fe films (10 nm) grown on In x Ga 1 - x As (0.09< x<0.25)/GaAs substrates by use of Kerr microscopy. For this investigation, two types of InGaAs buffer layers were prepared. One consisted of a single, thick InGaAs layer and the second composed of an InGaAs strained layer superlattice. Both were grown on (100) GaAs substrates. The study showed that many of the domain walls were approximately parallel to the easy axis of Fe for those films grown on the low x alloy, e.g. x = 0.1, InGaAs buffer layers

Laser safety at high profile laser facilities

International Nuclear Information System (INIS)

Barat, K.

2010-01-01

Complete text of publication follows. Laser safety has been an active concern of laser users since the invention of the laser. Formal standards were developed in the early 1970's and still continue to be developed and refined. The goal of these standards is to give users guidance on the use of laser and consistent safety guidance and requirements for laser manufacturers. Laser safety in the typical research setting (government laboratory or university) is the greatest challenge to the laser user and laser safety officer. This is due to two factors. First, the very nature of research can put the user at risk; consider active manipulation of laser optics and beam paths, and user work with energized systems. Second, a laser safety culture that seems to accept laser injuries as part of the graduate student educational process. The fact is, laser safety at research settings, laboratories and universities still has long way to go. Major laser facilities have taken a more rigid and serious view of laser safety, its controls and procedures. Part of the rationale for this is that these facilities draw users from all around the world presenting the facility with a work force of users coming from a wide mix of laser safety cultures. Another factor is funding sources do not like bad publicity which can come from laser accidents and a poor safety record. The fact is that injuries, equipment damage and lost staff time slow down progress. Hence high profile/large laser projects need to adapt a higher safety regimen both from an engineering and administrative point of view. This presentation will discuss all these points and present examples. Acknowledgement. This work has been supported by the University of California, Director, Office of Science.

Laser in urology. Laser i urologien

Energy Technology Data Exchange (ETDEWEB)

Breisland, H.O. (Aker Sykehus, Oslo (Norway))

1991-09-01

The neodymium YAG laser is particularly suited for endoscopic urologic surgery because the YAG laser light can be conducted in flexible fibers. Superficial bladder tumours can be treated under local anaesthesia in the outpatient department. The frequency of local recurrences is low, significantly lower than after electrosection or electrocoagulation. Selected cases of T2-muscle invasive bladder tumours can be cured with laser coagulation applied subsequently to transurethral resection. Combined treatment with electrosection and laser coagulation of localized prostatic cancer is a promising method which compares favourably with results obtained by other treatment modalities. Tumours in the upper urinary tract can be laser-treated through ureteroscopes or nephroscopes, but the treatment should be limited to low stage, low grade tumours. Laser is the treatment of choice for intraurethral condylomatas. Laser treatment of penil carcinoma gives excellent cosmetic and functional results and few local recurrences. Laser lithotripsy is a new technique for treatment of ureteric stones and photodynamic laser therapy is a promising tecnique for treatment of carcinoma in situ in the bladder empithelium. However, neither of these techniques are available for clinical use in Norway as yet. 17 refs., 3 figs., 1 tabs.

Laser system using ultra-short laser pulses

Science.gov (United States)

Dantus, Marcos [Okemos, MI; Lozovoy, Vadim V [Okemos, MI; Comstock, Matthew [Milford, MI

2009-10-27

A laser system using ultrashort laser pulses is provided. In another aspect of the present invention, the system includes a laser, pulse shaper and detection device. A further aspect of the present invention employs a femtosecond laser and binary pulse shaping (BPS). Still another aspect of the present invention uses a laser beam pulse, a pulse shaper and a SHG crystal.

Application of Various Lasers to Laser Trimming Resistance System

Institute of Scientific and Technical Information of China (English)

SUN Ji-feng

2007-01-01

Though the laser trimming resistance has been an old laser machining industry for over 30 years, the development of technology brings new alternative lasers which can be used for the traditional machining. The paper describes application of various lasers to laser trimming resistance system including early traditional krypton arc lamp pumped Nd:YAG to laser, modern popular diode pumped solid state laser and the present advanced harmonic diode pumped solid state laser. Using the new alternative lasers in the laser trimming resistance system can dramatically improve the yields and equipment performance.

Effect of natural homointerfaces on the magnetic properties of pseudomorphic La0.7Sr0.3MnO3 thin film: Phase separation vs split domain structure

International Nuclear Information System (INIS)

Congiu, Francesco; Sanna, Carla; Maritato, Luigi; Orgiani, Pasquale; Geddo Lehmann, Alessandra

2016-01-01

We studied the effect of naturally formed homointerfaces on the magnetic and electric transport behavior of a heavily twinned, 40 nm thick, pseudomorphic epitaxial film of La 0.7 Sr 0.3 MnO 3 deposited by molecular beam epitaxy on ferroelastic LaAlO 3 (001) substrate. As proved by high resolution X-ray diffraction analysis, the lamellar twin structure of the substrate is imprinted in La 0.7 Sr 0.3 MnO 3 . In spite of the pronounced thermomagnetic irreversibility in the DC low field magnetization, spin-glass-like character, possibly related to the structural complexity, was ruled out, on the base of AC susceptibility results. The magnetic characterization indicates anisotropic ferromagnetism, with a saturation magnetization M s = 3.2 μ B /Mn, slightly reduced with respect to the fully polarized value of 3.7 μ B /Mn. The low field DC magnetization vs temperature is non bulklike, with a two step increase in the field cooled M FC (T) branch and a two peak structure in the zero field cooled M ZFC (T) one. Correspondingly, two peaks are present in the resistivity vs temperature ρ(T) curve. With reference to the behavior of epitaxial manganites deposited on bicrystal substrates, results are discussed in terms of a two phase model, in which each couple of adjacent ferromagnetic twin cores, with bulklike T C = 370 K, is separated by a twin boundary with lower Curie point T C = 150 K, acting as barrier for spin polarized transport. The two phase scenario is compared with the alternative one based on a single ferromagnetic phase with the peculiar ferromagnetic domains structure inherent to twinned manganites films, reported to be split into interconnected and spatially separated regions with in-plane and out-of-plane magnetization, coinciding with twin cores and twin boundaries respectively.

Effect of natural homointerfaces on the magnetic properties of pseudomorphic La0.7Sr0.3MnO3 thin film: Phase separation vs split domain structure

Science.gov (United States)

Congiu, Francesco; Sanna, Carla; Maritato, Luigi; Orgiani, Pasquale; Geddo Lehmann, Alessandra

2016-12-01

We studied the effect of naturally formed homointerfaces on the magnetic and electric transport behavior of a heavily twinned, 40 nm thick, pseudomorphic epitaxial film of La0.7Sr0.3MnO3 deposited by molecular beam epitaxy on ferroelastic LaAlO3(001) substrate. As proved by high resolution X-ray diffraction analysis, the lamellar twin structure of the substrate is imprinted in La0.7Sr0.3MnO3. In spite of the pronounced thermomagnetic irreversibility in the DC low field magnetization, spin-glass-like character, possibly related to the structural complexity, was ruled out, on the base of AC susceptibility results. The magnetic characterization indicates anisotropic ferromagnetism, with a saturation magnetization Ms = 3.2 μB/Mn, slightly reduced with respect to the fully polarized value of 3.7 μB/Mn. The low field DC magnetization vs temperature is non bulklike, with a two step increase in the field cooled MFC(T) branch and a two peak structure in the zero field cooled MZFC(T) one. Correspondingly, two peaks are present in the resistivity vs temperature ρ(T) curve. With reference to the behavior of epitaxial manganites deposited on bicrystal substrates, results are discussed in terms of a two phase model, in which each couple of adjacent ferromagnetic twin cores, with bulklike TC = 370 K, is separated by a twin boundary with lower Curie point TC = 150 K, acting as barrier for spin polarized transport. The two phase scenario is compared with the alternative one based on a single ferromagnetic phase with the peculiar ferromagnetic domains structure inherent to twinned manganites films, reported to be split into interconnected and spatially separated regions with in-plane and out-of-plane magnetization, coinciding with twin cores and twin boundaries respectively.

Laser optically pumped by laser-produced plasma

International Nuclear Information System (INIS)

Silfvast, W.T.; Wood, O.R. II.

1975-01-01

Laser solids, liquids and gases are pumped by a new technique in which the output from an efficient molecular laser, such as a CO 2 laser, ionizes a medium, such as xenon, into a generally cylindrical plasma volume, in proximity to the pumped laser body. Breakdown yields a visible and ultraviolet-radiation-emitting plasma in that volume to pump the laser body. The spectral radiance of the plasma is significantly higher than that produced by a dc-discharge-heated plasma at nearly all wavelengths in the plasma spectrum. The risetime of radiation from the laser-produced plasma can also be significantly shorter than that of a dc heated plasma. A further advantage resides in the fact that in some applications the attenuating walls needed by flashlamps may be eliminated with the result that laser threshold is more readily reached. Traveling wave excitation may be provided by oblique incidence of the pumping laser beam through the ionizable medium to create sequential ionization of portions of that medium along the length of the pumped laser body. (auth)

Diode laser-pumped Ho:YLF laser

International Nuclear Information System (INIS)

Hemmati, H.

1987-01-01

The author reports laser action in Ho:YLF at 2.06 μm following optical pumping with a cw diode laser array. Diode laser-pumped Nd-YAG and Ho:YAG have been reported recently. Lasers with a wavelength of 2 μm have medical and optical communication applications. The diode laser light is focused with a 60-mm focal length lens onto the YLF crystal. A high-reflectivity mirror with 100-mm radius of curvature was used as the output coupler. The lasing threshold was at 5 mWof incident power. This is higher than expected considering that a high reflector was used as the output coupler. However, a more uniform cooling of the crystal is expected to lower the lasing threshold. With 100 mW of pump power coupled into the crystal, --20 mW of 2-μm radiation was observed from this unoptimized setup. The 2-μm laser output is highly sensitive to output coupler alignment, YLF crystal temperature, and pump laser wavelength. The 20% optical conversion efficiency achieved in his preliminary measurements is expected to be improved by better crystal cooling, proper matching of laser wavelength to crystal absorption, variations in the concentration of Ho and sensitizers and use of a proper output coupler. A study of the parameters mentioned above and the effect of crystal temperature on the laser output is under way

Lasers for the SILVA laser isotope separation process

International Nuclear Information System (INIS)

Lapierre, Y.

1997-01-01

The main principles of the laser isotope separation process for the production of enriched uranium at lower cost, are reviewed and the corresponding optimal laser characteristics are described. The development of the SILVA laser isotope separation process involved researches in the various domains of pump lasers, dye lasers, laser and optics systems and two test facilities for the feasibility studies which are expected for 1997

C-RED One and C-RED2: SWIR high-performance cameras using Saphira e-APD and Snake InGaAs detectors

Science.gov (United States)

Gach, Jean-Luc; Feautrier, Philippe; Stadler, Eric; Clop, Fabien; Lemarchand, Stephane; Carmignani, Thomas; Wanwanscappel, Yann; Boutolleau, David

2018-02-01

After the development of the OCAM2 EMCCD fast visible camera dedicated to advanced adaptive optics wavefront sensing, First Light Imaging moved to the SWIR fast cameras with the development of the C-RED One and the C-RED 2 cameras. First Light Imaging's C-RED One infrared camera is capable of capturing up to 3500 full frames per second with a subelectron readout noise and very low background. C-RED One is based on the last version of the SAPHIRA detector developed by Leonardo UK. This breakthrough has been made possible thanks to the use of an e-APD infrared focal plane array which is a real disruptive technology in imagery. C-RED One is an autonomous system with an integrated cooling system and a vacuum regeneration system. It operates its sensor with a wide variety of read out techniques and processes video on-board thanks to an FPGA. We will show its performances and expose its main features. In addition to this project, First Light Imaging developed an InGaAs 640x512 fast camera with unprecedented performances in terms of noise, dark and readout speed based on the SNAKE SWIR detector from Sofradir. The camera was called C-RED 2. The C-RED 2 characteristics and performances will be described. The C-RED One project has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement N° 673944. The C-RED 2 development is supported by the "Investments for the future" program and the Provence Alpes Côte d'Azur Region, in the frame of the CPER.

Development of frequency tunable Ti:sapphire laser and dye laser pumped by a pulsed Nd:YAG laser

International Nuclear Information System (INIS)

Yi, Jong Hoon; Horn, Roland; Wendt, K.

2001-01-01

We investigated lasing characteristics of two kinds of tunable laser, liquid dye laser and solid Ti:sapphire crystal laser, pumped by high pulse repetition rate Nd:YAG laser. Dye laser showed drastically reduced pulsewidth compared with that of pump laser and it also contained large amount of amplified spontaneous emission. Ti:sapphire laser showed also reduced pulsewidth. But, the laser conversion pump laser and Ti:sapphire laser pulse, we used a Brewster-cut Pockel's cell for Q-switching. The laser was frequency doubled by a type I BBO crystal outside of the cavity.

Photonic bandgap fiber lasers and multicore fiber lasers for next generation high power lasers

DEFF Research Database (Denmark)

Shirakawa, A.; Chen, M.; Suzuki, Y.

2014-01-01

Photonic bandgap fiber lasers are realizing new laser spectra and nonlinearity mitigation that a conventional fiber laser cannot. Multicore fiber lasers are a promising tool for power scaling by coherent beam combination. © 2014 OSA....

Laser power sources and laser technology for accelerators

International Nuclear Information System (INIS)

Lowenthal, D.

1986-01-01

The requirements on laser power sources for advanced accelerator concepts are formidable. These requirements are driven by the need to deliver 5 TeV particles at luminosities of 10/sup 33/ - 10/sup 34/ cm/sup -2/ sec/sup -1/. Given that optical power can be transferred efficiently to the particles these accelerator parameters translate into single pulse laser output energies of several kilojoules and rep rates of 1-10 kHz. The average laser output power is then 10-20 MW. Larger average powers will be needed if efficient transfer proves not to be possible. A laser plant of this magnitude underscores the importance of high wall plug efficiency and reasonable cost in $/Watt. The interface between the laser output pulse format and the accelerator structure is another area that drives the laser requirements. Laser accelerators break up into two general architectures depending on the strength of the laser coupling. For strong coupling mechanisms, the architecture requires many ''small'' lasers powering the accelerator in a staged arrangement. For the weak coupling mechanisms, the architecture must feature a single large laser system whose power must be transported along the entire accelerator length. Both of these arrangements have demanding optical constraints in terms of phase matching sequential stages, beam combining arrays of laser outputs and optimizing coupling of laser power in a single accelerating stage

Laser pumped lasers for isotope separation

International Nuclear Information System (INIS)

Fry, S.M.

1976-01-01

A study of the isotope separation laser requirements reveals that high pressure polyatomic molecular gas laser pumped lasers can attain the necessary characteristics including tunability, energy output, pulse width, and repetition rate. The results of a search, made for molecules meeting the appropriate requirements for one of several pump schemes utilizing a CO 2 laser and with output in the 12 μm or 16μm wavelength range, are presented. Several methods of pumping are reviewed and two novel pump schemes are presented. A laser pumped laser device design is given, and operation of this device and associated diagnostic equipment is confirmed by repeating experiments in OCS and NH 3 . The results of OCS laser experiments show that an improvement in pump rate and output per unit length is obtained with the device, using a wedged transverse pumping scheme. A new multi-line laser system in NH 3 pumped by a TEA CO 2 laser is reported. More than forty transitions spanning the wavelength range of 9.2 to 13.8 μm are observed and identified. A strong output at 12.08 μm is one of the closest lines yet found to the required laser isotope separation wavelength. Far infrared emission near 65 μm is observed and is responsible for populating levels which lase in pure ammonia near 12.3 μm. Buffer gas (e.g., N 2 or He) pressures of approximately 40--800 torr cause energy transfer by collision-induced rotationaltransitions from the pumped antisymmetric to the lasing symmetric levels in the nu 2 = 1 band of ammonia. Most of the observed lines are aP(J,K) transitions which originate from the nu 2 /sup s/ band. Measurements of the pressure dependence of the laser output shows that some lines lase at pressures greater than one atmosphere. Transient behavior of the 12.08 μm line is calculated from a simplified analytic model and these calculations are compared to the experimental results

Future prospects of laser diodes and fiber lasers

International Nuclear Information System (INIS)

Ueda, Ken-ichi

2000-01-01

For the next century we should develop new concepts for coherent control of light generation and propagation. Owing to the recent development of ultra fine structures in semiconductor lasers, fiber lasers, and various kinds of waveguide structure, we can make optical devices which control the light propagation artificially. But, the phase locking and phase control of multiple laser oscillators are one of the most important directions of laser science and technology. The coherent summation has been a dream of laser since 1960. Is it possible to solve this old and quite challenging problem for laser science? This is also a very basic concept because the laser action based on the stimulated emission is the process of coherent summation of huge number of photons emitted from individual atoms. In this paper, I discuss the fundamental direction of laser research in the next ten or twenty years. The active optics and laser technology should be combined intrinsically in near future. (author)

YCOB lasers

International Nuclear Information System (INIS)

Richardson, Martin; Hammons, Dennis; Eichenholz, Jason; Chai, Bruce; Ye, Qing; Jang, Won; Shah, Lawrence

1999-01-01

We review new developments with a new laser host material, YCa 4 O(BO 3 ) 3 or YCOB. Lasers based on this host material will open new opportunities for the development of compact, high-power, frequency-agile visible and near IR laser sources, as well as sources for ultrashort pulses. Efficient diode-pumped laser action with both Nd-doped and Yb-doped YCOB has already been demonstrated. Moreover, since these materials are biaxial, and have high nonlinear optical coefficients, they have become the first laser materials available as efficient self-frequency-doubled lasers, capable of providing tunable laser emission in several regions of the visible spectrum. Self-frequency doubling eliminates the need for inclusion of a nonlinear optical element within or external to the laser resonator. These laser materials possess excellent thermal and optical properties, have high laser-damage thresholds, and can be grown to large sizes. In addition they are non-hygroscopic. They therefore possess all the characteristics necessary for laser materials required in rugged, compact systems. Here we summarize the rapid progress made in the development of this new class of lasers, and review their potential for a number of applications. (author)

Parameters in fractional laser assisted delivery of topical anesthetics: Role of laser type and laser settings.

Science.gov (United States)

Meesters, Arne A; Nieboer, Marilin J; Kezic, Sanja; de Rie, Menno A; Wolkerstorfer, Albert

2018-05-07

Efficacy of topical anesthetics can be enhanced by pretreatment of the skin with ablative fractional lasers. However, little is known about the role of parameters such as laser modality and laser density settings in this technique. Aims of this study were to compare the efficacy of pretreatment with two different ablative fractional laser modalities, a CO 2 laser and an Er:YAG laser, and to assess the role of laser density in ablative fractional laser assisted topical anesthesia. In each of 15 healthy subjects, four 10 × 10 mm test regions on the back were randomized to pretreatment (70-75 μm ablation depth) with CO 2 laser at 5% density, CO 2 laser at 15% density, Er:YAG laser at 5% density or Er:YAG laser at 15% density. Articaine hydrochloride 40 mg/ml + epinephrine 10 μg/ml solution was applied under occlusion to all four test regions. After 15 minutes, a pass with the CO 2 laser (1,500 μm ablation depth) was administered as pain stimulus to each test region. A reference pain stimulus was given on unanesthetized skin. The main outcome parameter, pain, was scored on a 0-10 visual analogue scale (VAS) after each pain stimulus. Median VAS scores were 1.50 [CO 2 5%], 0.50 [CO 2 15%], 1.50 [Er:YAG 5%], 0.43 [Er:YAG 15%], and 4.50 [unanesthetized reference]. VAS scores for all pretreated test regions were significantly lower compared to the untreated reference region (P laser pretreated regions. However, VAS scores were significantly lower at 15% density compared to 5% density for both for the CO 2 laser (P laser (P laser was considered slightly more painful than pretreatment with Er:YAG laser by the subjects. Fractional laser assisted topical anesthesia is effective even with very low energy settings and an occlusion time of only 15 minutes. Both the CO 2 laser and the Er:YAG laser can be used to assist topical anesthesia although the CO 2 laser pretreatment is experienced as more painful. In our study settings, using articaine

Laser beam cutting method. Laser ko ni yoru kaitai koho

Energy Technology Data Exchange (ETDEWEB)

Kutsumizu, A. (Obayashi Corp., Osaka (Japan))

1991-07-01

In this special issue paper concerning the demolition of concrete structures, was introduced a demolition of concrete structures using laser, of which practical application is expected due to the remarkable progress of generating power and efficiency of laser radiator. The characteristics of laser beam which can give a temperature of one million centigrade at the irradiated spot, the laser radiator consisting of laser medium, laser resonator and pumping apparatus, and the laser kinds for working, such as CO{sub 2} laser, YAG laser and CO laser, were described. The basic constitution of laser cutting equipment consisting of large generating power radiator, beam transmitter, beam condenser, and nozzle for working was also illustrated. Furthermore, strong and weak points in the laser cutting for concrete and reinforcement were enumerated. Applications of laser to cutting of reinforced and unreinforced concrete constructions were shown, and the concept and safety measure for application of laser to practical demolition was discussed. 5 refs., 8 figs.

Ultrashort pulse laser technology laser sources and applications

CERN Document Server

Schrempel, Frank; Dausinger, Friedrich

2016-01-01

Ultrashort laser pulses with durations in the femtosecond range up to a few picoseconds provide a unique method for precise materials processing or medical applications. Paired with the recent developments in ultrashort pulse lasers, this technology is finding its way into various application fields. The book gives a comprehensive overview of the principles and applications of ultrashort pulse lasers, especially applied to medicine and production technology. Recent advances in laser technology are discussed in detail. This covers the development of reliable and cheap low power laser sources as well as high average power ultrashort pulse lasers for large scale manufacturing. The fundamentals of laser-matter-interaction as well as processing strategies and the required system technology are discussed for these laser sources with respect to precise materials processing. Finally, different applications within medicine, measurement technology or materials processing are highlighted.

Pulsed laser deposition of SmFeAsO1-δ on MgO(100) substrates

Science.gov (United States)

Haindl, Silvia; Kinjo, Hiroyuki; Hanzawa, Kota; Hiramatsu, Hidenori; Hosono, Hideo

2018-04-01

Layered iron oxyarsenides are novel interesting semimetallic compounds that are itinerant antiferromagnets in their ground state with a transition to high-temperature superconductivity upon charge carrier doping. The rare earth containing mother compounds offer rich physics due to different antiferromagnetic orderings: the alignment of Fe magnetic moments within the FeAs sublattice, which is believed to play a role for the superconducting pairing mechanism, and the ordering of the rare-earth magnetic moments at low temperatures. Here, we present thin film preparation and a film growth study of SmFeAsO on MgO(100) substrates using pulsed laser deposition (PLD). In general, the PLD method is capable to produce iron oxyarsenide thin films, however, competition with impurity phase formation narrows the parameter window. We assume that the film growth in an ultra-high vacuum (UHV) environment results in an oxygen-deficient phase, SmFeAsO1-δ. Despite the large lattice misfit, we find epitaxial oxyarsenide thin film growth on MgO(100) with evolving film thickness. Bragg reflections are absent in very thin films although they locally show indications for pseudomorphic growth of the first unit cells. We propose the possibility for a Stranski-Krastanov growth mode as a result of the large in-plane lattice misfit between the iron oxypnictide and the MgO unit cells. A columnar 3-dimensional film growth mode dominates and the surface roughness is determined by growth mounds, a non-negligible parameter for device fabrication as well as in the application of surface sensitive probes. Furthermore, we found evidence for a stratified growth in steps of half a unit cell, i.e. alternating growth of (FeAs)- and (SmO1-δ)+ layers, the basic structural components of the unit cell. We propose a simple model for the growth kinetics of this compound.

Laser beam diagnostics for kilowatt power pulsed YAG laser

International Nuclear Information System (INIS)

Liu, Yi; Leong, Keng H.

1992-01-01

There is a growing need for high power YAG laser beam diagnostics with the recent introduction of such lasers in laser material processing. In this paper, we will describe the use of a commercially available laser beam analyzer (Prometec) to profile the laser beam from a 1600 W pulsed Nd:YAG laser that has a 1 mm fiber optic beam delivery system. The selection of laser pulse frequency and pulse width for the measurement is discussed. Laser beam propagation parameters by various optical components such as fibers and lenses can be determined from measurements using this device. The importance of such measurements will be discussed

Laser materials processing with diode lasers

OpenAIRE

Li, Lin; Lawrence, Jonathan; Spencer, Julian T.

1996-01-01

Laser materials processing is currently dominated by CO2, Nd-YAG and Excimer lasers. Continuous advances in semiconductor laser technology over the last decade have increased the average power output of the devices annualy by two fold, resulting in the commercial availability of the diode lasers today with delivery output powers in excess of 60W in CW mode and 5kW in qasi-CW mode. The advantages of compactness, high reliability, high efficiency and potential low cost, due to the mass producti...

Camera-Based Lock-in and Heterodyne Carrierographic Photoluminescence Imaging of Crystalline Silicon Wafers

Science.gov (United States)

Sun, Q. M.; Melnikov, A.; Mandelis, A.

2015-06-01

Carrierographic (spectrally gated photoluminescence) imaging of a crystalline silicon wafer using an InGaAs camera and two spread super-bandgap illumination laser beams is introduced in both low-frequency lock-in and high-frequency heterodyne modes. Lock-in carrierographic images of the wafer up to 400 Hz modulation frequency are presented. To overcome the frame rate and exposure time limitations of the camera, a heterodyne method is employed for high-frequency carrierographic imaging which results in high-resolution near-subsurface information. The feasibility of the method is guaranteed by the typical superlinearity behavior of photoluminescence, which allows one to construct a slow enough beat frequency component from nonlinear mixing of two high frequencies. Intensity-scan measurements were carried out with a conventional single-element InGaAs detector photocarrier radiometry system, and the nonlinearity exponent of the wafer was found to be around 1.7. Heterodyne images of the wafer up to 4 kHz have been obtained and qualitatively analyzed. With the help of the complementary lock-in and heterodyne modes, camera-based carrierographic imaging in a wide frequency range has been realized for fundamental research and industrial applications toward in-line nondestructive testing of semiconductor materials and devices.

Transurethral vaporesection of prostate: diode laser or thulium laser?

Science.gov (United States)

Tan, Xinji; Zhang, Xiaobo; Li, Dongjie; Chen, Xiong; Dai, Yuanqing; Gu, Jie; Chen, Mingquan; Hu, Sheng; Bai, Yao; Ning, Yu

2018-05-01

This study compared the safety and effectiveness of the diode laser and thulium laser during prostate transurethral vaporesection for treating benign prostate hyperplasia (BPH). We retrospectively analyzed 205 patients with BPH who underwent a diode laser or thulium laser technique for prostate transurethral vaporesection from June 2016 to June 2017 and who were followed up for 3 months. Baseline characteristics of the patients, perioperative data, postoperative outcomes, and complications were compared. We also assessed the International Prostate Symptom Score (IPSS), quality of life (QoL), maximum flow rate (Q max ), average flow rate (AFR), and postvoid residual volume (PVR) at 1 and 3 months postoperatively to evaluate the functional improvement of each group. There were no significant differences between the diode laser and thulium laser groups related to age, prostate volume, operative time, postoperative hospital stays, hospitalization costs, or perioperative data. The catheterization time was 3.5 ± 0.8 days for the diode laser group and 4.7 ± 1.8 days for the thulium laser group (p diode laser and thulium laser contributes to safe, effective transurethral vaporesection in patients with symptomatic BPH. Diode laser, however, is better than thulium laser for prostate transurethral vaporesection because of its shorter catheterization time. The choice of surgical approach is more important than the choice of laser types during clinical decision making for transurethral laser prostatectomy.

MT6425CA: a 640 X 512-25μm CTIA ROIC for SWIR InGaAs detector arrays

Science.gov (United States)

Eminoglu, Selim; Mahsereci, Yigit Uygar; Altiner, Caglar; Akin, Tayfun

2012-06-01

This paper reports the development of a new CTIA ROIC (MT6425CA) suitable for SWIR InGaAs detector arrays. MT6425CA has a format of 640 × 512 with a pixel pitch of 25 μm and has a system-on-chip architecture, where all the critical timing and biasing for this ROIC are generated by programmable blocks on-chip. MT6425CA is a highly configurable and flexible ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. The ROIC runs on 3.3V supply voltage at nominal clock speed of 10 MHz clock. It performs snapshot operation both using Integrate-Then-Read (ITR) and Integrate-While- Read (IWR) modes. The CTIA type pixel input circuitry has a full-well-capacity (FWC) of about 320,000e-, with an input referred read noise of less than 110e- at 300K. MT6425CA has programmable number of outputs, where 4, 2, or 1 output can be selected along with an analog reference for pseudo-differential operation. The integration time can be programmed up to 1s in steps of 0.1μs. The gain and offset in the ROIC can be programmed to adjust the output offset and voltage swing. ROIC dissipates less than 130mW from a 3.3V supply at full speed and full frame size with 4 outputs, providing both low-power and low-noise operation. MT6425CA is fabricated using a modern mixed-signal CMOS process on 200mm CMOS wafers with a high yield above 75%, yielding more than 50 working parts per wafer. It has been silicon verified, and tested parts are available either in wafer and die levels with a complete documentation including test reports and wafer maps. A USB based camera electronics and camera development platform with software are available to help customers to evaluate the imaging performance of MT6425CA in a fast and efficient way.

Reverse spontaneous laser line sweeping in ytterbium fiber laser

Czech Academy of Sciences Publication Activity Database

Navrátil, Petr; Peterka, Pavel; Honzátko, Pavel; Kubeček, V.

2017-01-01

Roč. 14, č. 3 (2017), č. článku 035102. ISSN 1612-2011 R&D Projects: GA ČR(CZ) GA16-13306S Institutional support: RVO:67985882 ; RVO:68378271 Keywords : laser line sweeping * ytterbium * fiber lasers Subject RIV: BH - Optics, Masers, Lasers; BH - Optics, Masers, Lasers (FZU-D) OBOR OECD: Optics (including laser optics and quantum optics); Optics (including laser optics and quantum optics) (FZU-D) Impact factor: 2.537, year: 2016

Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

Energy Technology Data Exchange (ETDEWEB)

Gauthier, J.-P.; Almosni, S.; Léger, Y.; Perrin, M.; Even, J.; Cornet, C., E-mail: charles.cornet@insa-rennes.fr; Durand, O. [UMR FOTON, CNRS, INSA-Rennes, F-35708 Rennes (France); Robert, C. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Balocchi, A.; Carrère, H.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, F-31077 Toulouse (France)

2014-12-15

We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.

High-energy molecular lasers self-controlled volume-discharge lasers and applications

CERN Document Server

Apollonov, V V

2016-01-01

This book displays the physics and design of high-power molecular lasers. The lasers described are self-controlled volume-discharge lasers. The book explains self-sustained discharge lasers, self-initiated discharge lasers and technical approaches to laser design. Important topics discussed are laser efficiency, laser beam quality and electric field homogeneity. The book contains many new innovative applications.

Laser safety considerations for a mobile laser program

Science.gov (United States)

Flor, Mary

1997-05-01

An increased demand for advanced laser technology, especially in the area of cutaneous and cosmetic procedures has prompted physicians to use mobile laser services. Utilization of a mobile laser service allows physicians to provide the latest treatments for their patients while minimizing overhead costs. The high capital expense of laser systems is often beyond the financial means of individual clinicians, group practices, free-standing clinics and smaller community hospitals. Historically rapid technology turnover with laser technology places additional risk which is unacceptable to many institutions. In addition, health care reform is mandating consolidation of equipment within health care groups to keep costs at a minimum. In 1994, Abbott Northwestern Hospital organized an in-house mobile laser technology service which employs a group of experienced laser specialists to deliver and support laser treatments for hospital outreach and other regional physicians and health care facilities. Many of the hospital's internal safety standards and policies are applicable to the mobile environment. A significant challenge is client compliance because of the delicate balance of managing risk while avoiding being viewed as a regulator. The clinics and hospitals are assessed prior to service to assure minimum laser safety standards for both the patient and the staff. A major component in assessing new sites is to inform them of applicable regulatory standards and their obligations to assure optimum laser safety. In service training is provided and hospital and procedures are freely shared to assist the client in establishing a safe laser environment. Physician and nursing preceptor programs are also made available.

Dermatological laser treatment

International Nuclear Information System (INIS)

Moerk, N.J.; Austad, J.; Helland, S.; Thune, P.; Volden, G.; Falk, E.

1991-01-01

The article reviews the different lasers used in dermatology. Special emphasis is placed on the treatment of naevus flammeus (''portwine stain'') where lasers are the treatment of choice. Argon laser and pulsed dye laser are the main lasers used in vascular skin diseases, and the article focuses on these two types. Copper-vapour laser, neodymium-YAG laser and CO 2 laser are also presented. Information is provided about the availability of laser technology in the different health regions in Norway. 5 refs., 2 figs

Laser Ablation of Biological Tissue Using Pulsed CO2 Laser

International Nuclear Information System (INIS)

Hashishin, Yuichi; Sano, Shu; Nakayama, Takeyoshi

2010-01-01

Laser scalpels are currently used as a form of laser treatment. However, their ablation mechanism has not been clarified because laser excision of biological tissue occurs over a short time scale. Biological tissue ablation generates sound (laser-induced sound). This study seeks to clarify the ablation mechanism. The state of the gelatin ablation was determined using a high-speed video camera and the power reduction of a He-Ne laser beam. The aim of this study was to clarify the laser ablation mechanism by observing laser excision using the high-speed video camera and monitoring the power reduction of the He-Ne laser beam. We simulated laser excision of a biological tissue by irradiating gelatin (10 wt%) with radiation from a pulsed CO 2 laser (wavelength: 10.6 μm; pulse width: 80 ns). In addition, a microphone was used to measure the laser-induced sound. The first pulse caused ablation particles to be emitted in all directions; these particles were subsequently damped so that they formed a mushroom cloud. Furthermore, water was initially evaporated by laser irradiation and then tissue was ejected.

Laser applications in nanotechnology: nanofabrication using laser ablation and laser nanolithography

International Nuclear Information System (INIS)

Makarov, G N

2013-01-01

The fact that nanoparticles and nanomaterials have fundamental properties different both from their constituent atoms or molecules and from their bulk counterparts has stimulated great interest, both theoretical and practical, in nanoparticles and nanoparticle-based assemblies (functional materials), with the result that these structures have become the subject of explosive research over the last twenty years or so. A great deal of progress in this field has relied on the use of lasers. In this paper, the directions followed and results obtained in laser nanotechnology research are reviewed. The parameters, properties, and applications of nanoparticles are discussed, along with the physical and chemical methods for their fabrication and investigation. Nanofabrication applications of and fundamental physical principles behind laser ablation and laser nanolithography are discussed in detail. The applications of laser radiation are shown to range from fabricating, melting, and evaporating nanoparticles to changing their shape, structure, size, and size distribution, through studying their dynamics and forming them into periodic arrays and various structures and assemblies. The historical development of research on nanoparticles and nanomaterials and the application of laser nanotechnology in various fields are briefly reviewed. (reviews of topical problems)

Laser spectroscopy and laser isotope separation of atomic gadolinium

International Nuclear Information System (INIS)

Chen, Y. W.; Yamanaka, C.; Nomaru, K.; Kou, K.; Niki, H.; Izawa, Y.; Nakai, S.

1994-01-01

Atomic vapor laser isotope separation (AVLIS) is a process which uses intense pulsed lasers to selectively photoionize one isotopic species of a chemical element, after which these ions are extracted electromagnetically. The AVLIS has several advantages over the traditional methods based on the mass difference, such as high selectivity, low energy consumption, short starting time and versatility to any atoms. The efforts for atomic vapor laser isotope separation at ILT and ILE, Osaka University have been concentrated into the following items: 1) studies on laser spectroscopy and laser isotope separation of atomic gadolinium, 2) studies on interaction processes including coherent dynamics, propagation effects and atom-ion collision in AVLIS system, 3) development of laser systems for AVLIS. In this paper, we present experimental results on the laser spectroscopy and laser isotope separation of atomic gadolinium.

The Newest Laser Processing

International Nuclear Information System (INIS)

Lee, Baek Yeon

2007-01-01

This book mentions laser processing with laser principle, laser history, laser beam property, laser kinds, foundation of laser processing such as laser oscillation, characteristic of laser processing, laser for processing and its characteristic, processing of laser hole including conception of processing of laser hole and each material, and hole processing of metal material, cut of laser, reality of cut, laser welding, laser surface hardening, application case of special processing and safety measurement of laser.

Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

International Nuclear Information System (INIS)

Chang, S.J.; Yu, H.C.; Su, Y.K.; Chen, I.L.; Lee, T.D.; Lu, C.M.; Chiou, C.H.; Lee, Z.H.; Yang, H.P.; Sung, C.P.

2005-01-01

Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance

Electrodeless excimer laser; Laser a eccimeri senza elettrodi

Energy Technology Data Exchange (ETDEWEB)

Lisi, N. [ENEA, Divisione Nuovi Materiali, Centro Ricerche Casaccia, Rome (Italy)

2001-07-01

In this paper it is proposed how to build an excimer laser based on an electrodeless discharge (or Dielectric Barrier Discharge). Such laser could operate with a low energy per pulse (<100 mJ) and a high repetition rate (<100 kHz). The most relevant advantage an electrodeless DBD laser is the much longer gas mixture lifetime. This feature could allow the operation of a sealed laser emitting higher average power with respect to commercially available excimer lasers. Such discharge scheme could be advantageous in order to excite the F{sub 2} excimer molecule, whose emission wavelength in the VUV range (157 nm) at high reprate is particularly interesting in the micro-lithography field. [Italian] In questo documento viene proposto come costruire un laser a eccimeri basato su una scarica priva di elettrodi, o Dielectric Barrier Discharge. Tale laser puo' funzionare con una bassa energia per impulso (<100 mJ) ad alta frequenza di ripetizione (<100 kHz). Il vantaggio fondamentale di un laser a DBD e quindi privo di elettrodi e' la vita media della miscela gassosa molto piu' alta che potrebbe permettere alla camera laser di operare sigillata ad una potenza media superiore a quella dei laser a eccimeri attuali. Tale schema di pompaggio potrebbe essere particolarmente vantaggioso per eccitare la molecola eccimero F{sub 2} la cui lunghezza di emissione nel VUV (157 nm) ad elevata frequenza di ripetizione presenta un notevole interesse nel campo della produzione di microcircuiti.

Laser technologies for laser accelerators. Annual report

International Nuclear Information System (INIS)

1985-01-01

The primary result of the work reported is the determination of laser system architectures that satsify the requirements of high luminosity, high energy (about 1 TeV), electron accelerators. It has been found that high laser efficiency is a very hard driver for these accelerators as the total average laser output optical power is likely to fall above 10 MW. The luminosity requires rep rates in the kHz range, and individual pulse lengths in the 1-10 psec range are required to satisfy acceleration gradient goals. CO 2 and KrF lasers were chosen for study because of their potential to simultaneously satisfy the given requirements. Accelerator luminosity is reviewed, and requirements on laser system average power and rep rate are determined as a function of electron beam bunch parameters. Laser technologies are reviewed, including CO 2 , excimers, solid state, and free electron lasers. The proposed accelerator mechanisms are summarized briefly. Work on optical transport geometries for near and far field accelerators are presented. Possible exploitation of the CO 2 and DrF laser technology to generate the required pulse lengths, rep rates, and projected efficiencies is illustrated and needed development work is suggested. Initial efforts at developing a 50 GeV benchmark conceptual design and a 100 MeV demonstration experiment conceptual design are presented

Laser ion sources

Energy Technology Data Exchange (ETDEWEB)

Bykovskij, Yu

1979-02-01

The characteristics a laser source of multiply-ionized ions are described with regard to the interaction of laser radiation and matter, ion energy spectrum, angular ion distribution. The amount of multiple-ionization ions is evaluated. Out of laser source applications a laser injector of multiple-ionization ions and nuclei, laser mass spectrometry, laser X-ray microradiography, and a laser neutron generators are described.

Laser Physics and Physics with Lasers - Recent Advances

International Nuclear Information System (INIS)

Marowsky, G.

2008-01-01

This contribution reviews the development as well as recent technological advances in the field of optics with lasers and laser-related applications. Topics ranging from 'attoscience' to 'zero-modes' shall be dealt with in this presentation. Further reading in the following references is suggested: Springer Handbook of Lasers and Optics (F. Trager, ed.), 2007, ISBN-13: 978-0-387-95579-7; Chapter 11.7, Part C: Ultraviolet Lasers: Excimers, Fluorine (F2), Nitrogen (N2), pp. 764-776; Excimer Laser Technology (D. Basting, G. Marowsky, eds.) 2005, Springer, ISBN-13 978-3-540-20056-7

LASER PROCESSING ON SINGLE CRYSTALS BY UV PULSE LASER

OpenAIRE

龍見, 雅美; 佐々木, 徹; 高山, 恭宜

2009-01-01

Laser processing by using UV pulsed laser was carried out on single crystal such as sapphire and diamond in order to understand the fundamental laser processing on single crystal. The absorption edges of diamond and sapphire are longer and shorter than the wave length of UV laser, respectively. The processed regions by laser with near threshold power of processing show quite different state in each crystal.

Design windows of laser fusion power plants and conceptual design of laser-diode pumped slab laser

International Nuclear Information System (INIS)

Kozaki, Y.; Eguchi, T.; Izawa, Y.

1999-01-01

An analysis of the design space available to laser fusion power plants has been carried out, in terms of design key parameters such as target gain, laser energy and laser repetition rate, the number of fusion react ion chambers, and plant size. The design windows of economically attractive laser fusion plants is identified with the constraints of key design parameters and the cost conditions. Especially, for achieving high repetition rate lasers, we have proposed and designed a diode-pumped solid-state laser driver which consists of water-cooled zig-zag path slab amplifiers. (author)

Lasers

CERN Document Server

Milonni, Peter W

1988-01-01

A comprehensive introduction to the operating principles and applications of lasers. Explains basic principles, including the necessary elements of classical and quantum physics. Provides concise discussions of various laser types including gas, solid state, semiconductor, and free electron lasers, as well as of laser resonators, diffraction, optical coherence, and many applications including holography, phase conjugation, wave mixing, and nonlinear optics. Incorporates many intuitive explanations and practical examples. Discussions are self-contained in a consistent notation and in a style that should appeal to physicists, chemists, optical scientists and engineers.

Development of laser materials processing and laser metrology techniques

International Nuclear Information System (INIS)

Kim, Cheol Jung; Chung, Chin Man; Kim, Jeong Mook; Kim, Min Suk; Kim, Kwang Suk; Baik, Sung Hoon; Kim, Seong Ouk; Park, Seung Kyu

1997-09-01

The applications of remote laser materials processing and metrology have been investigated in nuclear industry from the beginning of laser invention because they can reduce the risks of workers in the hostile environment by remote operation. The objective of this project is the development of laser material processing and metrology techniques for repairing and inspection to improve the safety of nuclear power plants. As to repairing, we developed our own laser sleeve welding head and innovative optical laser weld monitoring techniques to control the sleeve welding process. Furthermore, we designed and fabricated a 800 W Nd:YAG and a 150 W Excimer laser systems for high power laser materials processing in nuclear industry such as cladding and decontamination. As to inspection, we developed an ESPI and a laser triangulation 3-D profile measurement system for defect detection which can complement ECT and UT inspections. We also developed a scanning laser vibrometer for remote vibration measurement of large structures and tested its performance. (author). 58 refs., 16 tabs., 137 figs

Development of short pulse laser pumped x-ray lasers

International Nuclear Information System (INIS)

Dunn, J; Osterheld, A L; Hunter, J R; Shlyaptsev, V N

2000-01-01

X-ray lasers have been extensively studied around the world since the first laboratory demonstration on the Novette laser at LLNL in 1984 [l]. The characteristic properties of short wavelength, high monochromaticity, collimation and coherence make x-ray lasers useful for various applications. These include demonstrations of biological imaging within the water window, interferometry of laser plasmas and radiography of laser-heated surfaces. One of the critical issues has been the high power pump required to produce the inversion. The power scaling as a function of x-ray laser wavelength follows a -k4 to law. The shortest x-ray laser wavelength of ∼ 35 (angstrom) demonstrated for Ni-like All was at the limit of Nova laser capabilities. By requiring large, high power lasers such as Nova, the shot rate and total number of shots available have limited the rapid development of x-ray lasers and applications. In fact over the last fifteen years the main thrust has been to develop more efficient, higher repetition rate x-ray lasers that can be readily scaled to shorter wavelengths. The recent state of progress in the field can be found in references. The objective of the project was to develop a soft x-ray laser (XRL) pumped by a short pulse laser of a few joules. In effect to demonstrate a robust, worlung tabletop x-ray laser at LLNL for the first time. The transient collisional scheme as proposed by Shlyaptsev et al [8, 9] was the candidate x-ray laser for study. The successful endeavour of any scientific investigation is often based upon prudent early decisions and the choice of this scheme was both sound and fruitful. It had been demonstrated very recently for Ne-like Ti at 326 A using a small tabletop laser [10] but had not yet reached its full potential. We chose this scheme for several reasons: (a) it was a collisional-type x-ray laser which has been historically the most robust; (b) it had the promise of high efficiency and low energy threshold for lasing; (c) the

Laser-supported detonation waves and pulsed laser propulsion

International Nuclear Information System (INIS)

Kare, J.

1990-01-01

A laser thermal rocket uses the energy of a large remote laser, possibly ground-based, to heat an inert propellant and generate thrust. Use of a pulsed laser allows the design of extremely simple thrusters with very high performance compared to chemical rockets. The temperatures, pressures, and fluxes involved in such thrusters (10 4 K, 10 2 atmospheres, 10 7 w/cm 2 ) typically result in the creation of laser-supported detonation (LSD) waves. The thrust cycle thus involves a complex set of transient shock phenomena, including laser-surface interactions in the ignition of the LSD wave, laser-plasma interactions in the LSD wave itself, and high-temperature nonequilibrium chemistry behind the LSD wave. The SDIO Laser Propulsion Program is investigating these phenomena as part of an overall effort to develop the technology for a low-cost Earth-to-orbit laser launch system. We will summarize the Program's approach to developing a high performance thruster, the double-pulse planar thruster, and present an overview of some results obtained to date, along with a discussion of the many research question still outstanding in this area

ND:GLASS LASER DESIGN FOR LASER ICF FISSION ENERGY (LIFE)

International Nuclear Information System (INIS)

Caird, J.A.; Agrawal, V.; Bayramian, A.; Beach, R.; Britten, J.; Chen, D.; Cross, R.; Ebbers, C.; Erlandson, A.; Feit, M.; Freitas, B.; Ghosh, C.; Haefner, C.; Homoelle, D.; Ladran, T.; Latkowski, J.; Molander, W.; Murray, J.; Rubenchik, S.; Schaffers, K.; Siders, C.W.; Stappaerts, E.; Sutton, S.; Telford, S.; Trenholme, J.; Barty, C.J.

2008-01-01

We have developed preliminary conceptual laser system designs for the Laser ICF (Inertial Confinement Fusion) Fission Energy (LIFE) application. Our approach leverages experience in high-energy Nd:glass laser technology developed for the National Ignition Facility (NIF), along with high-energy-class diode-pumped solid-state laser (HEC-DPSSL) technology developed for the DOE's High Average Power Laser (HAPL) Program and embodied in LLNL's Mercury laser system. We present laser system designs suitable for both indirect-drive, hot spot ignition and indirect-drive, fast ignition targets. Main amplifiers for both systems use laser-diode-pumped Nd:glass slabs oriented at Brewster's angle, as in NIF, but the slabs are much thinner to allow for cooling by high-velocity helium gas as in the Mercury laser system. We also describe a plan to mass-produce pump-diode lasers to bring diode costs down to the order of $0.01 per Watt of peak output power, as needed to make the LIFE application economically attractive

Laser fusion

International Nuclear Information System (INIS)

Eliezer, S.

1982-02-01

In this paper, the physics of laser fusion is described on an elementary level. The irradiated matter consists of a dense inner core surrounded by a less dense plasma corona. The laser radiation is mainly absorbed in the outer periphery of the plasma. The absorbed energy is transported inward to the ablation surface where plasma flow is created. Due to this plasma flow, a sequence of inward going shock waves and heat waves are created, resulting in the compression and heating of the core to high density and temperature. The interaction physics between laser and matter leading to thermonuclear burn is summarized by the following sequence of events: Laser absorption → Energy transport → Compression → Nuclear Fusion. This scenario is shown in particular for a Nd:laser with a wavelength of 1 μm. The wavelength scaling of the physical processes is also discussed. In addition to the laser-plasma physics, the Nd high power pulsed laser is described. We give a very brief description of the oscillator, the amplifiers, the spatial filters, the isolators and the diagnostics involved. Last, but not least, the concept of reactors for laser fusion and the necessary laser system are discussed. (author)

New power lasers

International Nuclear Information System (INIS)

Yamanaka, Masanobu; Daido, Hiroyuki; Imasaki, Kazuo.

1989-01-01

As the new power lasers which are expected to exert large extending effect to the fields of advanced science and technology including precision engineering as well as laser nuclear fusion, LD-excited solid laser, X-ray laser and free electron laser are taken up and outlined. Recently, the solid laser using high power output, high efficiency semiconductor laser as the exciting beam source has been developed. This is called laser diode (LD)-excited solid laser, and the heightening of power output and efficiency and the extension of life are planned. Its present status and application to medical use, laser machining, laser soldering and so on are described. In 1960, the laser in visible region appeared, however in 1985, the result of observing induced emission beam by electron collision exciting method was reported in USA. In the wavelength range of 200 A, holography and contact X-ray microscope applications were verified. The various types of soft X-ray laser and the perspective hereafter are shown. The principle of free electron laser is explained. In the free electron laser, wavelength can be changed by varying electron beam energy, the period of wiggler magnetic field and the intensity of magnetic field. Further, high efficiency and large power output are possible. Its present status, application and the perspective hereafter are reported. (K.I.)

An application of the theory of laser to nitrogen laser pumped dye laser

International Nuclear Information System (INIS)

Osman, Fatima Ahmed

1998-03-01

In this thesis we gave a general discussion on lasers, reviewing some of their properties, types and application. We also conducted an experiment where we obtained a dye laser pumped by nitrogen laser with a wave length of 337.1 nm and a power of 5 Mw.It was noticed that the produced radiation possesses characteristics different from those of other types of laser. This characteristics determine the tunability i.e the possibility of choosing the appropriately required wave-length of radiation for various applications.(Author)

Laser propulsion for orbit transfer - Laser technology issues

Science.gov (United States)

Horvath, J. C.; Frisbee, R. H.

1985-01-01

Using reasonable near-term mission traffic models (1991-2000 being the assumed operational time of the system) and the most current unclassified laser and laser thruster information available, it was found that space-based laser propulsion orbit transfer vehicles (OTVs) can outperform the aerobraked chemical OTV over a 10-year life-cycle. The conservative traffic models used resulted in an optimum laser power of about 1 MW per laser. This is significantly lower than the power levels considered in other studies. Trip time was taken into account only to the extent that the system was sized to accomplish the mission schedule.

Efficiencies of laser dyes for atomic vapor laser isotope separation

International Nuclear Information System (INIS)

Maeda, Mitsuo; Oki, Yuji; Uchiumi, Michihiro; Takao, Takayuki; Igarashi, Kaoru; Shimamoto, Kojiro.

1995-01-01

Efficiencies of 30 laser dyes for the atomic vapor laser isotope separation (AVLIS) are experimentally evaluated with a dye laser pumped by a frequency-doubled Nd:YAG laser. On the other hand, a simulation code is developed to describe the laser action of Rhodamine 6G, and the dependence of the laser efficiency on the pump wavelength is calculated. Following conclusions are obtained by these considerations:space: 1) Pyrromethene 567 showed 16% higher laser efficiency than Rhodamine 6G by 532 nm pumping, and Pyrromethene 556 has an ability to provide better efficiency by green light pumping with a Cu vapor laser; 2) Kiton red 620 and Rhodamine 640, whose efficiencies were almost the same as Rhodamine 6G by 532 nm pumping, will show better efficiencies by two-wavelength pumping with a Cu vapor laser. (author)

Laser frequency modulator for modulating a laser cavity

Science.gov (United States)

Erbert, Gaylen V.

1992-01-01

The present invention relates to a laser frequency modulator for modulating a laser cavity. It is known in the prior art to utilize a PZT (piezoelectric transducer) element in combination with a mirror to change the cavity length of a laser cavity (which changes the laser frequency). Using a PZT element to drive the mirror directly is adequate at frequencies below 10 kHz. However, in high frequency applications (100 kHz and higher) PZT elements alone do not provide a sufficient change in the cavity length. The present invention utilizes an ultrasonic concentrator with a PZT element and mirror to provide modulation of the laser cavity. With an ultrasonic concentrator, the mirror element at the end of a laser cavity can move at larger amplitudes and higher frequencies.

Growth and characterization of ZnCdMgSe-based green light emitters and distributed Bragg reflectors towards II-VI based semiconductor disk lasers

International Nuclear Information System (INIS)

De Jesus, Joel; Gayen, Swapan K.; Garcia, Thor A.; Tamargo, Maria C.; Kartazaev, Vladimir; Jones, Brynmor E.; Schlosser, Peter J.; Hastie, Jennifer E.

2015-01-01

We report the structural and optical properties of molecular beam epitaxy grown II-VI semiconductor multiple quantum well (MQW) structures and distributed Bragg reflector (DBR) on InP substrates for application in developing optically-pumped semiconductor disk lasers (SDLs) operating in the green spectral range. One sample was grown directly on an InP substrate with an InGaAs buffer layer, while another had a 5-period ZnCdMgSe-based DBR grown on the InGaAs/InP substrate. X-ray diffraction and scanning electron microscopy measurements revealed sharp superlattice peaks and abrupt layer interfaces, while steady-state photoluminescence measurements demonstrated surface emission between 540-570 nm. Under pulsed excitation both samples exhibited features of amplified spontaneous emission (ASE) or stimulated emission, accompanied by luminescence lifetime shortening. The sample with the DBR showed higher surface luminescence and the onset of ASE at lower pump power. To further explore the design and performance of a ZnCdMgSe-based DBR, a 20-period DBR was grown and a reflectivity of 83% was obtained at ∝560 nm. We estimate that a DBR with ∝40 periods would be needed for optimal performance in a SDL using these materials. These results show the potential of II-VI MQW structures on InP substrates for the development of SDLs operational in the green-yellow wavelength range. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Laser Technology.

Science.gov (United States)

Gauger, Robert

1993-01-01

Describes lasers and indicates that learning about laser technology and creating laser technology activities are among the teacher enhancement processes needed to strengthen technology education. (JOW)

ND:GLASS LASER DESIGN FOR LASER ICF FISSION ENERGY (LIFE)

Energy Technology Data Exchange (ETDEWEB)

Caird, J A; Agrawal, V; Bayramian, A; Beach, R; Britten, J; Chen, D; Cross, R; Ebbers, C; Erlandson, A; Feit, M; Freitas, B; Ghosh, C; Haefner, C; Homoelle, D; Ladran, T; Latkowski, J; Molander, W; Murray, J; Rubenchik, S; Schaffers, K; Siders, C W; Stappaerts, E; Sutton, S; Telford, S; Trenholme, J; Barty, C J

2008-10-28

We have developed preliminary conceptual laser system designs for the Laser ICF (Inertial Confinement Fusion) Fission Energy (LIFE) application. Our approach leverages experience in high-energy Nd:glass laser technology developed for the National Ignition Facility (NIF), along with high-energy-class diode-pumped solid-state laser (HEC-DPSSL) technology developed for the DOE's High Average Power Laser (HAPL) Program and embodied in LLNL's Mercury laser system. We present laser system designs suitable for both indirect-drive, hot spot ignition and indirect-drive, fast ignition targets. Main amplifiers for both systems use laser-diode-pumped Nd:glass slabs oriented at Brewster's angle, as in NIF, but the slabs are much thinner to allow for cooling by high-velocity helium gas as in the Mercury laser system. We also describe a plan to mass-produce pump-diode lasers to bring diode costs down to the order of $0.01 per Watt of peak output power, as needed to make the LIFE application economically attractive.

The influence of laser-particle interaction in laser induced breakdown spectroscopy and laser ablation inductively coupled plasma spectrometry

International Nuclear Information System (INIS)

Lindner, Helmut; Loper, Kristofer H.; Hahn, David W.; Niemax, Kay

2011-01-01

Particles produced by previous laser shots may have significant influence on the analytical signal in laser-induced breakdown spectroscopy (LIBS) and laser ablation inductively coupled plasma (LA-ICP) spectrometry if they remain close to the position of laser sampling. The effects of these particles on the laser-induced breakdown event are demonstrated in several ways. LIBS-experiments were conducted in an ablation cell at atmospheric conditions in argon or air applying a dual-pulse arrangement with orthogonal pre-pulse, i.e., plasma breakdown in a gas generated by a focussed laser beam parallel and close to the sample surface followed by a delayed crossing laser pulse in orthogonal direction which actually ablates material from the sample and produces the LIBS plasma. The optical emission of the LIBS plasma as well as the absorption of the pre-pulse laser was measured. In the presence of particles in the focus of the pre-pulse laser, the plasma breakdown is affected and more energy of the pre-pulse laser is absorbed than without particles. As a result, the analyte line emission from the LIBS plasma of the second laser is enhanced. It is assumed that the enhancement is not only due to an increase of mass ablated by the second laser but also to better atomization and excitation conditions favored by a reduced gas density in the pre-pulse plasma. Higher laser pulse frequencies increase the probability of particle-laser interaction and, therefore, reduce the shot-to-shot line intensity variation as compared to lower particle loadings in the cell. Additional experiments using an aerosol chamber were performed to further quantify the laser absorption by the plasma in dependence on time both with and without the presence of particles. The overall implication of laser-particle interactions for LIBS and LA-ICP-MS/OES are discussed.

The influence of laser-particle interaction in laser induced breakdown spectroscopy and laser ablation inductively coupled plasma spectrometry

Science.gov (United States)

Lindner, Helmut; Loper, Kristofer H.; Hahn, David W.; Niemax, Kay

2011-02-01

Particles produced by previous laser shots may have significant influence on the analytical signal in laser-induced breakdown spectroscopy (LIBS) and laser ablation inductively coupled plasma (LA-ICP) spectrometry if they remain close to the position of laser sampling. The effects of these particles on the laser-induced breakdown event are demonstrated in several ways. LIBS-experiments were conducted in an ablation cell at atmospheric conditions in argon or air applying a dual-pulse arrangement with orthogonal pre-pulse, i.e., plasma breakdown in a gas generated by a focussed laser beam parallel and close to the sample surface followed by a delayed crossing laser pulse in orthogonal direction which actually ablates material from the sample and produces the LIBS plasma. The optical emission of the LIBS plasma as well as the absorption of the pre-pulse laser was measured. In the presence of particles in the focus of the pre-pulse laser, the plasma breakdown is affected and more energy of the pre-pulse laser is absorbed than without particles. As a result, the analyte line emission from the LIBS plasma of the second laser is enhanced. It is assumed that the enhancement is not only due to an increase of mass ablated by the second laser but also to better atomization and excitation conditions favored by a reduced gas density in the pre-pulse plasma. Higher laser pulse frequencies increase the probability of particle-laser interaction and, therefore, reduce the shot-to-shot line intensity variation as compared to lower particle loadings in the cell. Additional experiments using an aerosol chamber were performed to further quantify the laser absorption by the plasma in dependence on time both with and without the presence of particles. The overall implication of laser-particle interactions for LIBS and LA-ICP-MS/OES are discussed.

Excimer Laser Technology

CERN Document Server

Basting, Dirk

2005-01-01

This comprehensive survey on Excimer Lasers investigates the current range of the technology, applications and devices of this commonly used laser source, as well as the future of new technologies, such as F2 laser technology. Additional chapters on optics, devices and laser systems complete this compact handbook. A must read for laser technology students, process application researchers, engineers or anyone interested in excimer laser technology. An effective and understandable introduction to the current and future status of excimer laser technology.

Laser systems for on-line laser ion sources

International Nuclear Information System (INIS)

Geppert, Christopher

2008-01-01

Since its initiation in the middle of the 1980s, the resonant ionization laser ion source has been established as a reliable and efficient on-line ion source for radioactive ion beams. In comparison to other on-line ion sources it comprises the advantages of high versatility for the elements to be ionized and of high selectivity and purity for the ion beam generated by resonant laser radiation. Dye laser systems have been the predominant and pioneering working horses for laser ion source applications up to recently, but the development of all-solid-state titanium:sapphire laser systems has nowadays initiated a significant evolution within this field. In this paper an overview of the ongoing developments will be given, which have contributed to the establishment of a number of new laser ion source facilities worldwide during the last five years.

Histologic evaluation of laser lipolysis: pulsed 1064-nm Nd:YAG laser versus cw 980-nm diode laser.

Science.gov (United States)

Mordon, Serge; Eymard-Maurin, Anne Françoise; Wassmer, Benjamin; Ringot, Jean

2007-01-01

The use of the laser as an auxiliary tool has refined the traditional technique for lipoplasty. During laser lipolysis, the interaction between the laser and the fat produced direct cellular destruction before the suction, reduced bleeding, and promoted skin tightening. This study sought to perform a comparative histologic evaluation of laser lipolysis with the pulsed 1064-nm Nd:YAG laser versus a continuous 980-nm diode laser. A pulsed 1064-nm Nd:YAG (Smart-Lipo; Deka, Italy) and a CW 980-nm diode laser (Pharaon, Osyris, France) were evaluated at different energy settings for lipolysis on the thighs of a fresh cadaver. The lasers were coupled to a 600-microm optical fiber inserted in a 1-mm diameter cannula. Biopsy specimens were taken on irradiated and non-irradiated areas. Hematoxylin-erythrosin-safran staining and immunostaining (anti-PS100 polyclonal antibody) were performed to identify fat tissue damage. In the absence of laser exposures (control specimens), cavities created by cannulation were seen; adipocytes were round in appearance and not deflated. At low energy settings, tumescent adipocytes were observed. At higher energy settings, cytoplasmic retraction, disruption of membranes, and heat-coagulated collagen fibers were noted; coagulated blood cells were also present. For the highest energy settings, carbonization of fat tissue involving fibers and membranes was clearly seen. For equivalent energy settings, 1064-nm and 980-nm wavelengths gave similar histologic results. Laser lipolysis is a relatively new technique that is still under development. Our histologic findings suggest several positive benefits of the laser, including skin retraction and a reduction in intraoperative bleeding. The interaction of the laser with the tissue is similar at 980 nm and 1064 nm with the same energy settings. Because higher volumes of fat are removed with higher total energy, a high-power 980-nm diode laser could offer an interesting alternative to the 1064-nm Nd

Tapered diode laser pumped 946 nm Nd:YAG laser

DEFF Research Database (Denmark)

Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Petersen, Paul Michael

2009-01-01

We successfully implemented a 946 nm Nd:YAG laser based on a 808 nm tapered diode pump laser. The tapered diode is developed at the Ferdinand-Braun-Institute fur Hochstfrequenztechnik in Germany. Figure 2 shows the experimental setup and results of each pump source coupled into a 1.5 mm crystal...... laser, we show that tapered diode laser pumping potentially increase the power of 946 nm lasers by a factor of two and reduce the threshold by a factor of three....

Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods

Science.gov (United States)

Zade, Dariush; Kanda, Takashi; Yamashita, Koji; Kakushima, Kuniyuki; Nohira, Hiroshi; Ahmet, Parhat; Tsutsui, Kazuo; Nishiyama, Akira; Sugii, Nobuyuki; Natori, Kenji; Hattori, Takeo; Iwai, Hiroshi

2011-10-01

We studied InGaAs surface treatment using hexamethyldisilazane (HMDS) vapor or (NH4)2S solution after initial oxide removal by hydrofluoric acid. The effect of each treatment on interface properties of La2O3/In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor was evaluated. We found that HMDS surface treatment of InGaAs, followed by La2O3 deposition and forming gas annealing reduces the MOS capacitor's interface state density more effectively than (NH4)2S treatment. The comparison of the capacitance-voltage data shows that the HMDS-treated sample reaches a maximum accumulation capacitance of 2.3 µF/cm2 at 1 MHz with roughly 40% less frequency dispersion near accumulation, than the sample treated with (NH4)2S solution. These results suggest that process optimization of HMDS application could lead to further improvement of InGaAs MOS interface, thereby making it a potential routine step for InGaAs surface passivation.

High power lasers & systems

OpenAIRE

Chatwin, Chris; Young, Rupert; Birch, Philip

2015-01-01

Some laser history;\\ud Airborne Laser Testbed & Chemical Oxygen Iodine Laser (COIL);\\ud Laser modes and beam propagation;\\ud Fibre lasers and applications;\\ud US Navy Laser system – NRL 33kW fibre laser;\\ud Lockheed Martin 30kW fibre laser;\\ud Conclusions

Spectroscopic and imaging diagnostics of pulsed laser deposition laser plasmas

International Nuclear Information System (INIS)

Thareja, Raj K.

2002-01-01

An overview of laser spectroscopic techniques used in the diagnostics of laser ablated plumes used for thin film deposition is given. An emerging laser spectroscopic imaging technique for the laser ablation material processing is discussed. (author)

Laser-diode pumped 40-W Yb:YAG ceramic laser.

Science.gov (United States)

Hao, Qiang; Li, Wenxue; Pan, Haifeng; Zhang, Xiaoyi; Jiang, Benxue; Pan, Yubai; Zeng, Heping

2009-09-28

We demonstrated a high-power continuous-wave (CW) polycrystalline Yb:YAG ceramic laser pumped by fiber-pigtailed laser diode at 968 nm with 400 mum fiber core. The Yb:YAG ceramic laser performance was compared for different Yb(3+) ion concentrations in the ceramics by using a conventional end-pump laser cavity consisting of two flat mirrors with output couplers of different transmissions. A CW laser output of 40 W average power with M(2) factor of 5.8 was obtained with 5 mol% Yb concentration under 120 W incident pump power. This is to the best of our knowledge the highest output power in end-pumped bulk Yb:YAG ceramic laser.

Ceramic Laser Materials

Directory of Open Access Journals (Sweden)

Guillermo Villalobos

2012-02-01

Full Text Available Ceramic laser materials have come a long way since the first demonstration of lasing in 1964. Improvements in powder synthesis and ceramic sintering as well as novel ideas have led to notable achievements. These include the first Nd:yttrium aluminum garnet (YAG ceramic laser in 1995, breaking the 1 KW mark in 2002 and then the remarkable demonstration of more than 100 KW output power from a YAG ceramic laser system in 2009. Additional developments have included highly doped microchip lasers, ultrashort pulse lasers, novel materials such as sesquioxides, fluoride ceramic lasers, selenide ceramic lasers in the 2 to 3 μm region, composite ceramic lasers for better thermal management, and single crystal lasers derived from polycrystalline ceramics. This paper highlights some of these notable achievements.

Infrared laser system

International Nuclear Information System (INIS)

Cantrell, C.D.; Carbone, R.J.

1977-01-01

An infrared laser system and method for isotope separation may comprise a molecular gas laser oscillator to produce a laser beam at a first wavelength, Raman spin flip means for shifting the laser to a second wavelength, a molecular gas laser amplifier to amplify said second wavelength laser beam to high power, and optical means for directing the second wavelength, high power laser beam against a desired isotope for selective excitation thereof in a mixture with other isotopes. The optical means may include a medium which shifts the second wavelength high power laser beam to a third wavelength, high power laser beam at a wavelength coincidental with a corresponding vibrational state of said isotope and which is different from vibrational states of other isotopes in the gas mixture

Ceramic Laser Materials

Science.gov (United States)

Sanghera, Jasbinder; Kim, Woohong; Villalobos, Guillermo; Shaw, Brandon; Baker, Colin; Frantz, Jesse; Sadowski, Bryan; Aggarwal, Ishwar

2012-01-01

Ceramic laser materials have come a long way since the first demonstration of lasing in 1964. Improvements in powder synthesis and ceramic sintering as well as novel ideas have led to notable achievements. These include the first Nd:yttrium aluminum garnet (YAG) ceramic laser in 1995, breaking the 1 KW mark in 2002 and then the remarkable demonstration of more than 100 KW output power from a YAG ceramic laser system in 2009. Additional developments have included highly doped microchip lasers, ultrashort pulse lasers, novel materials such as sesquioxides, fluoride ceramic lasers, selenide ceramic lasers in the 2 to 3 μm region, composite ceramic lasers for better thermal management, and single crystal lasers derived from polycrystalline ceramics. This paper highlights some of these notable achievements. PMID:28817044

Laser cutting: industrial relevance, process optimization, and laser safety

Science.gov (United States)

Haferkamp, Heinz; Goede, Martin; von Busse, Alexander; Thuerk, Oliver

1998-09-01

Compared to other technological relevant laser machining processes, up to now laser cutting is the application most frequently used. With respect to the large amount of possible fields of application and the variety of different materials that can be machined, this technology has reached a stable position within the world market of material processing. Reachable machining quality for laser beam cutting is influenced by various laser and process parameters. Process integrated quality techniques have to be applied to ensure high-quality products and a cost effective use of the laser manufacturing plant. Therefore, rugged and versatile online process monitoring techniques at an affordable price would be desirable. Methods for the characterization of single plant components (e.g. laser source and optical path) have to be substituted by an omnivalent control system, capable of process data acquisition and analysis as well as the automatic adaptation of machining and laser parameters to changes in process and ambient conditions. At the Laser Zentrum Hannover eV, locally highly resolved thermographic measurements of the temperature distribution within the processing zone using cost effective measuring devices are performed. Characteristic values for cutting quality and plunge control as well as for the optimization of the surface roughness at the cutting edges can be deducted from the spatial distribution of the temperature field and the measured temperature gradients. Main influencing parameters on the temperature characteristic within the cutting zone are the laser beam intensity and pulse duration in pulse operation mode. For continuous operation mode, the temperature distribution is mainly determined by the laser output power related to the cutting velocity. With higher cutting velocities temperatures at the cutting front increase, reaching their maximum at the optimum cutting velocity. Here absorption of the incident laser radiation is drastically increased due to

Laser wakefield acceleration with high-power, few-cycle mid-IR lasers

OpenAIRE

Papp, Daniel; Wood, Jonathan C.; Gruson, Vincent; Bionta, Mina; Gruse, Jan-Niclas; Cormier, Eric; Najmudin, Zulfikar; Légaré, François; Kamperidis, Christos

2018-01-01

The study of laser wakefield electron acceleration (LWFA) using mid-IR laser drivers is a promising path for future laser driven electronaccelerators, when compared to traditional near-IR laser drivers uperating at 0.8-1 {\\mu}m central wavelength ({\\lambda}laser), as the necessary vector potential a_0 for electron injection can be achieved with smaller laser powers due to the linear dependence on {\\lambda}laser. In this work, we perform 2D PIC simulations on LWFA using few-cycle high power (5...

Laser requirements for a laser fusion energy power plant

Institute of Scientific and Technical Information of China (English)

Stephen; E.Bodner; Andrew; J.Schmitt; John; D.Sethian

2013-01-01

We will review some of the requirements for a laser that would be used with a laser fusion energy power plant, including frequency, spatial beam smoothing, bandwidth, temporal pulse shaping, efficiency, repetition rate, and reliability. The lowest risk and optimum approach uses a krypton fluoride gas laser. A diode-pumped solid-state laser is a possible contender.

LaserFest Celebration

Energy Technology Data Exchange (ETDEWEB)

Dr. Alan Chodos; Elizabeth A. Rogan

2011-08-25

LaserFest was the yearlong celebration, during 2010, of the 50th anniversary of the demonstration of the first working laser. The goals of LaserFest were: to highlight the impact of the laser in its manifold commercial, industrial and medical applications, and as a tool for ongoing scientific research; to use the laser as one example that illustrates, more generally, the route from scientific innovation to technological application; to use the laser as a vehicle for outreach, to stimulate interest among students and the public in aspects of physical science; to recognize and honor the pioneers who developed the laser and its many applications; to increase awareness among policymakers of the importance of R&D funding as evidenced by such technology as lasers. One way in which LaserFest sought to meet its goals was to encourage relevant activities at a local level all across the country -- and also abroad -- that would be identified with the larger purposes of the celebration and would carry the LaserFest name. Organizers were encouraged to record and advertise these events through a continually updated web-based calendar. Four projects were explicitly detailed in the proposals: 1) LaserFest on the Road; 2) Videos; 3) Educational material; and 4) Laser Days.

Development of high-power CO2 lasers and laser material processing

Science.gov (United States)

Nath, Ashish K.; Choudhary, Praveen; Kumar, Manoj; Kaul, R.

2000-02-01

Scaling laws to determine the physical dimensions of the active medium and optical resonator parameters for designing convective cooled CO2 lasers have been established. High power CW CO2 lasers upto 5 kW output power and a high repetition rate TEA CO2 laser of 500 Hz and 500 W average power incorporated with a novel scheme for uniform UV pre- ionization have been developed for material processing applications. Technical viability of laser processing of several engineering components, for example laser surface hardening of fine teeth of files, laser welding of martensitic steel shroud and titanium alloy under-strap of turbine, laser cladding of Ni super-alloy with stellite for refurbishing turbine blades were established using these lasers. Laser alloying of pre-placed SiC coating on different types of aluminum alloy, commercially pure titanium and Ti-6Al-4V alloy, and laser curing of thermosetting powder coating have been also studied. Development of these lasers and results of some of the processing studies are briefly presented here.

Laser plasma instability experiments with KrF lasers

International Nuclear Information System (INIS)

Weaver, J. L.; Karasik, M.; Serlin, V.; Obenschain, S.; Chan, L-Y.; Kehne, D.; Schmitt, A. J.; Colombant, D.; Velikovich, A.; Oh, J.; Lehmberg, R. H.; Afeyan, B.; Phillips, L.; Seely, J.; Brown, C.; Feldman, U.; Aglitskiy, Y.; Mostovych, A. N.; Holland, G.

2007-01-01

Deleterious effects of laser-plasma instability (LPI) may limit the maximum laser irradiation that can be used for inertial confinement fusion. The short wavelength (248 nm), large bandwidth, and very uniform illumination available with krypton-fluoride (KrF) lasers should increase the maximum usable intensity by suppressing LPI. The concomitant increase in ablation pressure would allow implosion of low-aspect-ratio pellets to ignition with substantial gain (>20) at much reduced laser energy. The proposed KrF-laser-based Fusion Test Facility (FTF) would exploit this strategy to achieve significant fusion power (150 MW) with a rep-rate system that has a per pulse laser energy well below 1 MJ. Measurements of LPI using the Nike KrF laser are presented at and above intensities needed for the FTF (I∼2x10 15 W/cm 2 ). The results to date indicate that LPI is indeed suppressed. With overlapped beam intensity above the planar, single beam intensity threshold for the two-plasmon decay instability, no evidence of instability was observed via measurements of (3/2)ω o and (1/2)ω o harmonic emissions

Physics of laser fusion. Volume III. High-power pulsed lasers

International Nuclear Information System (INIS)

Holzrichter, J.F.; Eimerl, D.; George, E.V.; Trenholme, J.B.; Simmons, W.W.; Hunt, J.T.

1982-09-01

High-power pulsed lasers can deliver sufficient energy on inertial-confinement fusion (ICF) time scales (0.1 to 10 ns) to heat and compress deuterium-tritium fuel to fusion-reaction conditions. Several laser systems have been examined, including Nd:glass, CO 2 , KrF, and I 2 , for their ICF applicability. A great deal of developmental effort has been applied to the Nd:glass laser and the CO 2 gas laser systems; these systems now deliver > 10 4 J and 20 x 10 12 W to ICF targets. We are constructing the Nova Nd:glass laser at LLNL to provide > 100 kJ and > 100 x 10 12 W of 1-μm radiation for fusion experimentation in the mid-1980s. For ICF target gain > 100 times the laser input, we expect that the laser driver must deliver approx. 3 to 5 MJ of energy on a time scale of 10 to 20 ns. In this paper we review the technological status of fusion-laser systems and outline approaches to constructing high-power pulsed laser drivers

High Pressure Sensing and Dynamics Using High Speed Fiber Bragg Grating Interrogation Systems

Energy Technology Data Exchange (ETDEWEB)

Rodriguez, G. [LANL; Sandberg, R. L. [LANL; Lalone, B. M. [NSTec; Marshall, B. R. [NSTec; Grover, M. [NSTec; Stevens, G. D. [NSTec; Udd, E. [Columbia Gorge Research

2014-06-01

Fiber Bragg gratings (FBGs) are developing into useful sensing tools for measuring high pressure dynamics in extreme environments under shock loading conditions. Approaches using traditional diode array coupled FBG interrogation systems are often limited to readout speeds in the sub-MHz range. For shock wave physics, required detection speeds approaching 100 MHz are desired. We explore the use of two types of FBG sensing systems that are aimed at applying this technology as embedded high pressure probes for transient shock events. Both approaches measure time resolved spectral shifts in the return light from short (few mm long) uniform FBGs at 1550 nm. In the first approach, we use a fiber coupled spectrometer to demultiplex spectral channels into an array (up to 12) of single element InGaAs photoreceivers. By monitoring the detectors during a shock impact event with high speed recording, we are able to track the pressure induced spectral shifting in FBG down to a time resolution of 20 ns. In the second approach, developed at the Special Technologies Lab, a coherent mode-locked fiber laser is used to illuminate the FBG sensor. After the sensor, wavelength-to-time mapping is accomplished with a chromatic dispersive element, and entire spectra are sampled using a single detector at the modelocked laser repetition rate of 50 MHz. By sampling with a 12 GHz InGaAs detector, direct wavelength mapping in time is recorded, and the pressure induced FBG spectral shift is sampled at 50 MHz. Here, the sensing systems are used to monitor the spectral shifts of FBGs that are immersed into liquid water and shock compressed using explosives. In this configuration, the gratings survive to pressures approaching 50 kbar. We describe both approaches and present the measured spectral shifts from the shock experiments.

High pressure sensing and dynamics using high speed fiber Bragg grating interrogation systems

Science.gov (United States)

Rodriguez, G.; Sandberg, R. L.; Lalone, B. M.; Marshall, B. R.; Grover, M.; Stevens, G.; Udd, E.

2014-06-01

Fiber Bragg gratings (FBGs) are developing into useful sensing tools for measuring high pressure dynamics in extreme environments under shock loading conditions. Approaches using traditional diode array coupled FBG interrogation systems are often limited to readout speeds in the sub-MHz range. For shock wave physics, required detection speeds approaching 100 MHz are desired. We explore the use of two types of FBG sensing systems that are aimed at applying this technology as embedded high pressure probes for transient shock events. Both approaches measure time resolved spectral shifts in the return light from short (few mm long) uniform FBGs at 1550 nm. In the first approach, we use a fiber coupled spectrometer to demultiplex spectral channels into an array (up to 12) of single element InGaAs photoreceivers. By monitoring the detectors during a shock impact event with high speed recording, we are able to track the pressure induced spectral shifting in FBG down to a time resolution of 20 ns. In the second approach, developed at the Special Technologies Lab, a coherent mode-locked fiber laser is used to illuminate the FBG sensor. After the sensor, wavelength-to-time mapping is accomplished with a chromatic dispersive element, and entire spectra are sampled using a single detector at the modelocked laser repetition rate of 50 MHz. By sampling with a 12 GHz InGaAs detector, direct wavelength mapping in time is recorded, and the pressure induced FBG spectral shift is sampled at 50 MHz. Here, the sensing systems are used to monitor the spectral shifts of FBGs that are immersed into liquid water and shock compressed using explosives. In this configuration, the gratings survive to pressures approaching 50 kbar. We describe both approaches and present the measured spectral shifts from the shock experiments.

Raman fiber lasers

CERN Document Server

2017-01-01

This book serves as a comprehensive, up-to-date reference about this cutting-edge laser technology and its many new and interesting developments. Various aspects and trends of Raman fiber lasers are described in detail by experts in their fields. Raman fiber lasers have progressed quickly in the past decade, and have emerged as a versatile laser technology for generating high power light sources covering a spectral range from visible to mid-infrared. The technology is already being applied in the fields of telecommunication, astronomy, cold atom physics, laser spectroscopy, environmental sensing, and laser medicine. This book covers various topics relating to Raman fiber laser research, including power scaling, cladding and diode pumping, cascade Raman shifting, single frequency operation and power amplification, mid-infrared laser generation, specialty optical fibers, and random distributed feedback Raman fiber lasers. The book will appeal to scientists, students, and technicians seeking to understand the re...

Effect of laser spot size on energy balance in laser induced plasmas

International Nuclear Information System (INIS)

Pant, H.C.; Sharma, S.; Bhawalkar, D.D.

1980-01-01

The effect of the laser spot size on laser light absorption in laser induced plasmas from solid targets was studied. It was found that at a constant laser intensity on the target, reduction in the laser spot size enhances the net laser energy absorption. It was also observed that the laser light reflection from the target becomes more diffused when the focal spot size is reduced

Influence of laser parameters on laser ultrasonic efficiency

CSIR Research Space (South Africa)

Forbes, A

2007-01-01

Full Text Available , TEA CO2 lasers, laser chemistry, short pulses 1. INTRODUCTION Polymer-matrix composites are increasingly used in the aerospace industry, particularly in the manufacture of modern fighter planes1-3. The number and complexity of such composites... efficiency can be improved by utilising short pulses in the 3–4 µm and 10 µm spectral regions1. Short pulse 10 µm radiation can be produced by transversely excited, atmospheric CO2 (TEA CO2) lasers. Due to the technological maturity of these lasers...

Improving the laser brightness of a commercial laser system

Science.gov (United States)

Naidoo, Darryl; Litvin, Igor; Forbes, Andrew

2016-02-01

We investigate the selection of a flat-top beam and a Gaussian beam inside a laser cavity on opposing mirrors. The concept is tested external to the laser cavity in a single pass and double pass regime where the latter mimics a single round trip in the laser. We implement this intra-cavity selection through the use of two 16 level diffractive optical elements. We consider a solid-state diode side-pumped laser resonator in a typical commercial laser configuration that consists of two planar mirrors where the DOEs are positioned at the mirrors. We out couple the Gaussian and flat-top distributions and we show that we improve the brightness of the laser with active mode control. We also demonstrate that the quality of the beam transformations determine the brightness improvement.

Navigated Pattern Laser System versus Single-Spot Laser System for Postoperative 360-Degree Laser Retinopexy.

Science.gov (United States)

Kulikov, Alexei N; Maltsev, Dmitrii S; Boiko, Ernest V

2016-01-01

Purpose . To compare three 360°-laser retinopexy (LRP) approaches (using navigated pattern laser system, single-spot slit-lamp (SL) laser delivery, and single-spot indirect ophthalmoscope (IO) laser delivery) in regard to procedure duration, procedural pain score, technical difficulties, and the ability to achieve surgical goals. Material and Methods . Eighty-six rhegmatogenous retinal detachment patients (86 eyes) were included in this prospective randomized study. The mean procedural time, procedural pain score (using 4-point Verbal Rating Scale), number of laser burns, and achievement of the surgical goals were compared between three groups (pattern LRP (Navilas® laser system), 36 patients; SL-LRP, 28 patients; and IO-LRP, 22 patients). Results . In the pattern LRP group, the amount of time needed for LRP and pain level were statistically significantly lower, whereas the number of applied laser burns was higher compared to those in the SL-LRP group and in the IO-LRP group. In the pattern LRP, SL-LRP, and IO-LRP groups, surgical goals were fully achieved in 28 (77.8%), 17 (60.7%), and 13 patients (59.1%), respectively ( p > 0.05). Conclusion . The navigated pattern approach allows improving the treatment time and pain in postoperative 360° LRP. Moreover, 360° pattern LRP is at least as effective in achieving the surgical goal as the conventional (slit-lamp or indirect ophthalmoscope) approaches with a single-spot laser.

Practical laser safety

International Nuclear Information System (INIS)

Winburn, D.C.

1985-01-01

This book includes discussions of the following topics: characteristics of lasers; eye components; skin damage thresholds; classification of lasers by ANSI Z136.1; selecting laser-protective eyewear; hazards associated with lasers; and, an index

Lasers technology

International Nuclear Information System (INIS)

2014-01-01

The Laser Technology Program of IPEN is developed by the Center for Lasers and Applications (CLA) and is committed to the development of new lasers based on the research of new optical materials and new resonator technologies. Laser applications and research occur within several areas such as Nuclear, Medicine, Dentistry, Industry, Environment and Advanced Research. Additional goals of the Program are human resource development and innovation, in association with Brazilian Universities and commercial partners

LASERS: A cryogenic slab CO laser

Science.gov (United States)

Ionin, Andrei A.; Kozlov, A. Yu; Seleznev, L. V.; Sinitsyn, D. V.

2009-03-01

A compact capacitive transverse RF-discharge-pumped slab CO laser with cryogenically cooled electrodes, which operates both in the cw and repetitively pulsed regimes, is fabricated. The laser operation is studied in the free running multifrequency regime at the vibrational - rotational transitions of the fundamental (V + 1 → V) vibrational bands of the CO molecule in the spectral region from 5.1 to 5.4 μm. Optimal operation conditions (gas mixture composition and pressure, RF pump parameters) are determined. It is shown that only gas mixtures with a high content of oxygen (up to 20% with respect to the concentration of CO molecules) can be used as an active medium of this laser. It is demonstrated that repetitively pulsed pumping is more efficient compared to cw pumping. In this case, quasi-cw lasing regime can be obtained. The maximum average output power of ~12 W was obtained for this laser operating on fundamental bands and its efficiency achieved ~14 %. The frequency-selective operation regime of the slab RF-discharge-pumped CO laser was realised at ~ 100 laser lines in the spectral region from 5.0 to 6.5 μm with the average output power of up to several tens of milliwatts in each line. Lasing at the transitions of the first vibrational overtone (V + 2 → V) of the CO molecule is obtained in the spectral region from 2.5 to 3.9 μm. The average output power of the overtone laser achieved 0.3 W. All the results were obtained without the forced gas mixture exchange in the discharge chamber. Under fixed experimental conditions, repetitively pulsed lasing (with fluctuations of the output characteristics no more than ±10 %) was stable for more than an hour.

Laser Stabilization with Laser Cooled Strontium

DEFF Research Database (Denmark)

Christensen, Bjarke Takashi Røjle

The frequency stability of current state-of-the-art stabilized clock lasers are limited by thermal fluctuations of the ultra-stable optical reference cavities used for their frequency stabilization. In this work, we study the possibilities for surpassing this thermal limit by exploiting the nonli......The frequency stability of current state-of-the-art stabilized clock lasers are limited by thermal fluctuations of the ultra-stable optical reference cavities used for their frequency stabilization. In this work, we study the possibilities for surpassing this thermal limit by exploiting...... the nonlinear effects from coupling of an optical cavity to laser cooled atoms having a narrow transition linewidth. Here, we have realized such a system where a thermal sample of laser cooled strontium-88 atoms are coupled to an optical cavity. The strontium-88 atoms were probed on the narrow 1S0-3P1 inter......-combination line at 689 nm in a strongly saturated regime. The dynamics of the atomic induced phase shift and absorption of the probe light were experimentally studied in details with the purpose of applications to laser stabilization. The atomic sample temperature was in the mK range which brought this system out...

Measurements of laser parameters for the Shiva laser fusion facility

International Nuclear Information System (INIS)

Ozarski, R.G.

1979-01-01

Large laser systems require numerous laser diagnostics to provide configuration, performance and maintenance data to permit efficient operation. The following diagnostics for a large laser system named Shiva are discussed: (1) description of Shiva laser system, (2) what measurements are desired and or required and why, (3) what measurement techniques and packages are employed and a brief description of the operating principles of the sensors employed, and (4) the laser diagnostic data acquisition and display system

Laser beam-plasma plume interaction during laser welding

Science.gov (United States)

Hoffman, Jacek; Moscicki, Tomasz; Szymanski, Zygmunt

2003-10-01

Laser welding process is unstable because the keyhole wall performs oscillations which results in the oscillations of plasma plume over the keyhole mouth. The characteristic frequencies are equal to 0.5-4 kHz. Since plasma plume absorbs and refracts laser radiation, plasma oscillations modulate the laser beam before it reaches the workpiece. In this work temporary electron densities and temperatures are determined in the peaks of plasma bursts during welding with a continuous wave CO2 laser. It has been found that during strong bursts the plasma plume over the keyhole consists of metal vapour only, being not diluted by the shielding gas. As expected the values of electron density are about two times higher in peaks than their time-averaged values. Since the plasma absorption coefficient scales as ~N2e/T3/2 (for CO2 laser radiation) the results show that the power of the laser beam reaching the metal surface is modulated by the plasma plume oscillations. The attenuation factor equals 4-6% of the laser power but it is expected that it is doubled by the refraction effect. The results, together with the analysis of the colour pictures from streak camera, allow also interpretation of the dynamics of the plasma plume.

Effects of As/P exchange on InAs/lnP (100) quantum dots formation by metalorganic chemical vapor Deposition

Energy Technology Data Exchange (ETDEWEB)

Barik, S; Tan, H H; Jagadish, C [The Australian National University, ACT (Australia). Research School of Physical Sciences and Engineering, Department of Electronic Materials Engineering

2005-07-01

Full text: Self-assembled InAs/lnP quantum dots (QDs) are very promising active materials for QD lasers and semiconductor amplifiers for optical fiber communications (1.3-1.55 mm). However the main challenge associated with this material system is the As/P exchange reaction which degrades the structural and optical properties of the QDs. In this talk, we will show the effect of growing a thin spacer layer of GaAs or InGaAs prior to the deposition of the InAs QDs by metalorganic chemical vapor deposition. Not only the effect of As/P exchange is suppressed or minimized but the bandgap of the QDs could be tuned too. Copyright (2005) Australian Institute of Physics.

Broadband upconversion imaging around 4 μm using an all-fiber supercontinuum source

Science.gov (United States)

Huot, Laurent; Moselund, Peter M.; Leick, Lasse; Tidemand-Lichtenberg, Peter; Pedersen, Christian

2017-02-01

We present a novel mid-infrared imaging system born from the combination of an all-fiber mid-IR supercontinuum source developed at NKT with ultra-sensitive upconversion detection technology from DTU Fotonik. The source delivers 100 mW of average power and its spectrum extends up to 4.5 μm. The infrared signal is passed through a sample and then focused into a bulk AgGaS2 crystal and subsequently mixed with a synchronous mixing signal at 1550 nm extracted from the pump laser of the supercontinuum. Through sum frequency generation, an upconverted signal ranging from 1030 nm to 1155 nm is generated and acquired using an InGaAs camera.

Para-hydrogen raman laser and its application to laser induced chemistry

International Nuclear Information System (INIS)

Tashiro, Hideo

1988-01-01

The report outlines the mechanism of the para-hydrogen Raman laser as a infrared light source, and its application to laser induced chemistry. The Stoke's wave number after a Raman shift is equal to the difference between the wave number of the CO 2 laser used for excitation and the rotation Raman wave number of the hydrogen molecule. A Raman laser can serve as an infrared source. CO 2 laser oscillation beam in the range of 9∼11 micrometers is selected and the frequency of infrared beam is varied by changing the wave number of the CO 2 laser beam. A problem with the Raman laser is that the Raman scatterring gain is small due to a large wavelength. In developing equipment, a special mechanism is required to solve this problem. A Raman laser comprises a CO 2 laser for excitation and multi-pulse Raman cells. The combination of a TEA oscillator and amplifiers gives CO 2 pulses with a peak power of about several tens of MW. Many heavy metal compounds including fluorides, carbonyl compounds and other organic compounds, absorb light with wavelengths in the same range as those of the Raman laser. Such compounds can be dissociated directly by applying Raman laser beams. The laser will be helpful for separation of isotopes, etc. (Nogami, K.)

Laser material processing

CERN Document Server

Steen, William

2010-01-01

This text moves from the basics of laser physics to detailed treatments of all major materials processing techniques for which lasers are now essential. New chapters cover laser physics, drilling, micro- and nanomanufacturing and biomedical laser processing.

Lasers in space

Science.gov (United States)

Michaelis, M. M.; Forbes, A.; Bingham, R.; Kellett, B. J.; Mathye, A.

2008-05-01

A variety of laser applications in space, past, present, future and far future are reviewed together with the contributions of some of the scientists and engineers involved, especially those that happen to have South African connections. Historically, two of the earliest laser applications in space, were atmospheric LIDAR and lunar ranging. These applications involved atmospheric physicists, several astronauts and many of the staff recruited into the Soviet and North American lunar exploration programmes. There is a strong interest in South Africa in both LIDAR and lunar ranging. Shortly after the birth of the laser (and even just prior) theoretical work on photonic propulsion and space propulsion by laser ablation was initiated by Georgii Marx, Arthur Kantrowitz and Eugen Saenger. Present or near future experimental programs are developing in the following fields: laser ablation propulsion, possibly coupled with rail gun or gas gun propulsion; interplanetary laser transmission; laser altimetry; gravity wave detection by space based Michelson interferometry; the de-orbiting of space debris by high power lasers; atom laser interferometry in space. Far future applications of laser-photonic space-propulsion were also pioneered by Carl Sagan and Robert Forward. They envisaged means of putting Saenger's ideas into practice. Forward also invented a laser based method for manufacturing solid antimatter or SANTIM, well before the ongoing experiments at CERN with anti-hydrogen production and laser-trapping. SANTIM would be an ideal propellant for interstellar missions if it could be manufactured in sufficient quantities. It would be equally useful as a power source for the transmission of information over light year distances. We briefly mention military lasers. Last but not least, we address naturally occurring lasers in space and pose the question: "did the Big Bang lase?"

Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2012-01-01

. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

Excimer laser applications

International Nuclear Information System (INIS)

Fantoni, R.

1988-01-01

This lecture deals with laser induced material photoprocessing, especially concerning those processes which are initiated by u.v. lasers (mostly excimer laser). Advantages of using the u.v. radiation emitted by excimer lasers, both in photophysical and photochemical processes of different materials, are discussed in detail. Applications concerning microelectronics are stressed with respect to other applications in different fields (organic chemistry, medicine). As further applications of excimer lasers, main spectroscopic techniques for ''on line'' diagnostics which employ excimer pumped dye lasers, emitting tunable radiation in the visible and near u.v. are reviewed

Technological laser application

International Nuclear Information System (INIS)

Shia, D.O.; Kollen, R.; Rods, U.

1980-01-01

Problems of the technological applications of lasers are stated in the popular form. Main requirements to a technological laser as well as problems arising in designing any system using lasers have been considered. Areas of the laser applications are described generally: laser treatment of materials, thermal treatment, welding, broach and drilling of holes, scribing, microtreatment and adjustment of resistors, material cutting, investigations into controlled thermonuclear fussion

Effects of laser fluence on silicon modification by four-beam laser interference

International Nuclear Information System (INIS)

Zhao, Le; Li, Dayou; Wang, Zuobin; Yue, Yong; Zhang, Jinjin; Yu, Miao; Li, Siwei

2015-01-01

This paper discusses the effects of laser fluence on silicon modification by four-beam laser interference. In this work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of surface structures, and the number of laser pulses was applied to the process in air. By controlling the parameters of laser irradiation, different shapes of silicon structures were fabricated. The results were obtained with the single laser fluence of 354 mJ/cm 2 , 495 mJ/cm 2 , and 637 mJ/cm 2 , the pulse repetition rate of 10 Hz, the laser exposure pulses of 30, 100, and 300, the laser wavelength of 1064 nm, and the pulse duration of 7–9 ns. The effects of the heat transfer and the radiation of laser interference plasma on silicon wafer surfaces were investigated. The equations of heat flow and radiation effects of laser plasma of interfering patterns in a four-beam laser interference distribution were proposed to describe their impacts on silicon wafer surfaces. The experimental results have shown that the laser fluence has to be properly selected for the fabrication of well-defined surface structures in a four-beam laser interference process. Laser interference patterns can directly fabricate different shape structures for their corresponding applications

Laser innovated manufacturing technology; Laser ga seisan gijutsu wo kakushinshita

Energy Technology Data Exchange (ETDEWEB)

Maruyama, I. [Honda Motor Co. Ltd., Tokyo (Japan)

1996-11-01

This paper looks back the history of applications of laser processing in the automobile industry, and introduces contents of some particularly unique applications from among them. The CO2 laser and YAG laser that are used mainly have increased their outputs with the times, and 50-kW CO2 laser and 4-kW YAG laser have now become available commercially. The laser processing has become used widely for cutting purpose in Japan, which is in contrast with their high application to welding in Europe and America. Cutting thick plates has been developed recently, which is applicable to plates as thick as about 25 mm. A flexible system in which YAG laser is combined with an optical fiber/articulated robot is operating for three-dimensional shape processing. Automobile makers are adopting laser processing for welding in place of the electron beam welding that has been used conventionally. The process is used also for a number of other applications including surface reformation, such as surface quenching for cylinder liner, and valve seat padding. 8 refs., 8 figs.

The Mercury Laser Advances Laser Technology for Power Generation

Energy Technology Data Exchange (ETDEWEB)

Ebbers, C A; Caird, J; Moses, E

2009-01-21

The National Ignition Facility (NIF) at Lawrence Livermore Laboratory is on target to demonstrate 'breakeven' - creating as much fusion-energy output as laser-energy input. NIF will compress a tiny sphere of hydrogen isotopes with 1.8 MJ of laser light in a 20-ns pulse, packing the isotopes so tightly that they fuse together, producing helium nuclei and releasing energy in the form of energetic particles. The achievement of breakeven will culminate an enormous effort by thousands of scientists and engineers, not only at Livermore but around the world, during the past several decades. But what about the day after NIF achieves breakeven? NIF is a world-class engineering research facility, but if laser fusion is ever to generate power for civilian consumption, the laser will have to deliver pulses nearly 100,000 times faster than NIF - a rate of perhaps 10 shots per second as opposed to NIF's several shots a day. The Mercury laser (named after the Roman messenger god) is intended to lead the way to a 10-shots-per-second, electrically-efficient, driver laser for commercial laser fusion. While the Mercury laser will generate only a small fraction of the peak power of NIF (1/30,000), Mercury operates at higher average power. The design of Mercury takes full advantage of the technology advances manifest in its behemoth cousin (Table 1). One significant difference is that, unlike the flashlamp-pumped NIF, Mercury is pumped by highly efficient laser diodes. Mercury is a prototype laser capable of scaling in aperture and energy to a NIF-like beamline, with greater electrical efficiency, while still running at a repetition rate 100,000 times greater.

Laser program overview

International Nuclear Information System (INIS)

Storm, E.; Coleman, L.W.

1985-01-01

The objectives of the Lawrence Livermore National Laboratory Laser Fusion program are to understand and develop the science and technology of inertial confinement fusion (ICF), and to utilize ICF in short- and long-term military applications, and, in the long-term, as a candidate for central-station civilian power generation. In 1984, using the Novette laser system, the authors completed experiments showing the very favorable scaling of laser-plama interactions with short-wavelength laser light. Their Novette experiments have unequivocally shown that short laser wavelength, i.e., less than 1 μm, is required to provide the drive necessary for efficient compression, ignition, and burn of DT fusion fuel. In other experiments with Novette, the authors made the first unambiguous observation of amplified spontaneous emission in the soft x-ray regime. The authors also conducted military applications and weapons physics experiments, which they discuss in detail in the classified volume of our Laser Program Annual Report. In the second thrust, advanced laser studies, they develop and test the concepts, components, and materials for present and future laser systems. Over the years, this has meant providing the technology base and scientific advances necessary to construct and operate a succession of six evermore-powerful laser systems. The latest of these, Nova, a 100-TW/100-kJ-class laser system, was completed in 1984. The Nd:glass laser continues to be the most effective and versatile tool for ICF and weapons physics because of its scalability in energy, the ability to efficiently convert its 1=μm output to shorter wavelengths, its ability to provide flexible, controlled pulse shaping, and its capability to adapt to a variety of irradiation and focusing geometries. For these reasons, many of our advanced laser studies are in areas appropriate to solid state laser technologies

MT6415CA: a 640×512-15µm CTIA ROIC for SWIR InGaAs detector arrays

Science.gov (United States)

Eminoglu, Selim; Isikhan, Murat; Bayhan, Nusret; Gulden, M. Ali; Incedere, O. Samet; Soyer, S. Tuncer; Kocak, Serhat; Yilmaz, Gokhan S.; Akin, Tayfun

2013-06-01

This paper reports the development of a new low-noise CTIA ROIC (MT6415CA) suitable for SWIR InGaAs detector arrays for low-light imaging applications. MT6415CA is the second product in the MT6400 series ROICs from Mikro-Tasarim Ltd., which is a fabless IC design house specialized in the development of monolithic imaging sensors and ROICs for hybrid imaging sensors. MT6415CA is a low-noise snapshot CTIA ROIC, has a format of 640 × 512 and pixel pitch of 15 µm, and has been developed with the system-on-chip architecture in mind, where all the timing and biasing for this ROIC are generated on-chip without requiring any external inputs. MT6415CA is a highly configurable ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. It performs snapshot operation both using Integrate-Then-Read (ITR) and Integrate-While-Read (IWR) modes. The CTIA type pixel input circuitry has three gain modes with programmable full-well-capacity (FWC) values of 10.000 e-, 20.000 e-, and 350.000 e- in the very high gain (VHG), high-gain (HG), and low-gain (LG) modes, respectively. MT6415CA has an input referred noise level of less than 5 e- in the very high gain (VHG) mode, suitable for very low-noise SWIR imaging applications. MT6415CA has 8 analog video outputs that can be programmed in 8, 4, or 2-output modes with a selectable analog reference for pseudo-differential operation. The ROIC runs at 10 MHz and supports frame rate values up to 200 fps in the 8-output mode. The integration time can be programmed up to 1s in steps of 0.1 µs. The ROIC uses 3.3 V and 1.8V supply voltages and dissipates less than 150 mW in the 4-output mode. MT6415CA is fabricated using a modern mixed-signal CMOS process on 200 mm CMOS wafers, and tested parts are available at wafer or die levels with test reports and wafer maps. A compact USB 3.0 camera and imaging software have been developed to demonstrate the imaging

Power balancing of multibeam laser fusion lasers

International Nuclear Information System (INIS)

Seka, W.; Morse, S.; Letzring, S.; Kremens, R.; Kessler, T.J.; Jaanimagi, P.; Keck, R.; Verdon, C.; Brown, D.

1989-01-01

The success of laser fusion depends to a good degree on the ability to compress the target to very high densities of ≥1000 times liquid DT. To achieve such compressions require that the irradiation nonuniformity must not exceed ∼1% rms over the whole time of the compression, particularly during the early phases of irradiation. The stringent requirements for the irradiation uniformity for laser fusion have been known for quite some time but until recently the energy balance was mistakenly equated to power balance. The authors describe their effort on energy balance and irradiation patterns on the target. They significantly improved the laser performance with respect to overall intensity distributions on target including the implementation of distributed (random) phase plates in each high power beam. However, the slightly varying performance of the third harmonic conversion crystals in the twenty-four beams of their laser system was generally compensated for by appropriately adjusted 1.054μm input laser energy. Computational analysis of the results of the recent high density campaign are shown

Biocavity Lasers

Energy Technology Data Exchange (ETDEWEB)

Gourley, P.L.; Gourley, M.F.

2000-10-05

Laser technology has advanced dramatically and is an integral part of today's healthcare delivery system. Lasers are used in the laboratory analysis of human blood samples and serve as surgical tools that kill, burn or cut tissue. Recent semiconductor microtechnology has reduced the size o f a laser to the size of a biological cell or even a virus particle. By integrating these ultra small lasers with biological systems, it is possible to create micro-electrical mechanical systems that may revolutionize health care delivery.

An overview of the laser ranging method of space laser altimeter

Science.gov (United States)

Zhou, Hui; Chen, Yuwei; Hyyppä, Juha; Li, Song

2017-11-01

Space laser altimeter is an active remote sensing instrument to measure topographic map of Earth, Moon and planetary. The space laser altimeter determines the range between the instrument and laser footprint by measuring round trip time of laser pulse. The return pulse reflected from ground surface is gathered by the receiver of space laser altimeter, the pulsewidth and amplitude of which are changeable with the variability of the ground relief. Meantime, several kinds of noise overlapped on the return pulse signal affect its signal-to-noise ratio. To eliminate the influence of these factors that cause range walk and range uncertainty, the reliable laser ranging methods need to be implemented to obtain high-precision range results. Based on typical space laser altimeters in the past few decades, various ranging methods are expounded in detail according to the operational principle of instruments and timing method. By illustrating the concrete procedure of determining time of flight of laser pulse, this overview provides the comparison of the employed technologies in previous and undergoing research programs and prospect innovative technology for space laser altimeters in future.

Novel laterally pumped by prism laser configuration for compact solid-state lasers

International Nuclear Information System (INIS)

Dascalu, T; Salamu, G; Sandu, O; Voicu, F; Pavel, N

2013-01-01

We propose a new laser configuration in which the pump radiation is coupled into the laser crystal through a prism. The laser medium is square shaped and the prism is attached on one of its lateral sides, near one of the crystal extremities. The diode-laser fiber end is placed close to the prism hypotenuse, the pump radiation is coupled into the laser crystal through the opposite surface of the prism and propagates into the crystal through total internal reflections. This laser geometry is simple to align and permits the realization of compact diode-pumped laser systems, as well as power scaling. A diode-pumped Nd:YAG laser yielding pulses of 2.1 mJ energy under a pump with pulses of 9.9 mJ is demonstrated. The laser slope efficiency is 0.22. Furthermore, this geometry enables one to obtain passively Q-switched lasers with the saturable absorber crystal placed between the resonator high-reflectivity mirror and the laser crystal. A Nd:YAG laser, passively Q-switched by a Cr 4+ :YAG crystal with initial transmission T 0 = 0.90, delivering laser output with a pulsed energy of 93 μJ, a duration of 26 ns and a pump threshold of 1.9 mJ, is realized in order to prove the concept. (letter)

A Laser Technology Test Facility for Laser Inertial Fusion Energy (LIFE)

International Nuclear Information System (INIS)

Bayramian, A.J.; Campbell, R.W.; Ebbers, C.A.; Freitas, B.L.; Latkowski, J.; Molander, W.A.; Sutton, S.B.; Telford, S.; Caird, J.A.

2010-01-01

A LIFE laser driver needs to be designed and operated which meets the rigorous requirements of the NIF laser system while operating at high average power, and operate for a lifetime of >30 years. Ignition on NIF will serve to demonstrate laser driver functionality, operation of the Mercury laser system at LLNL demonstrates the ability of a diode-pumped solid-state laser to run at high average power, but the operational lifetime >30 yrs remains to be proven. A Laser Technology test Facility (LTF) has been designed to specifically address this issue. The LTF is a 100-Hz diode-pumped solid-state laser system intended for accelerated testing of the diodes, gain media, optics, frequency converters and final optics, providing system statistics for billion shot class tests. These statistics will be utilized for material and technology development as well as economic and reliability models for LIFE laser drivers.

Robot-laser system

International Nuclear Information System (INIS)

Akeel, H.A.

1987-01-01

A robot-laser system is described for providing a laser beam at a desired location, the system comprising: a laser beam source; a robot including a plurality of movable parts including a hollow robot arm having a central axis along which the laser source directs the laser beam; at least one mirror for reflecting the laser beam from the source to the desired location, the mirror being mounted within the robot arm to move therewith and relative thereto to about a transverse axis that extends angularly to the central axis of the robot arm; and an automatic programmable control system for automatically moving the mirror about the transverse axis relative to and in synchronization with movement of the robot arm to thereby direct the laser beam to the desired location as the arm is moved

Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Li, Shuo; Chen, Rongzhang; Nelsen, Bryan; Chen, Kevin, E-mail: pec9@pitt.edu [Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States); Liu, Lei; Huang, Xi; Lu, Yongfeng [Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States)

2016-03-15

This paper reports the development of a compact and portable actively Q-switched Nd:YAG laser and its applications in laser-induced breakdown spectroscopy (LIBS). The laser was end-pumped by a vertical-cavity surface-emitting laser (VCSEL). The cavity lases at a wavelength of 1064 nm and produced pulses of 16 ns with a maximum pulse energy of 12.9 mJ. The laser exhibits a reliable performance in terms of pulse-to-pulse stability and timing jitter. The LIBS experiments were carried out using this laser on NIST standard alloy samples. Shot-to-shot LIBS signal stability, crater profile, time evolution of emission spectra, plasma electron density and temperature, and limits of detection were studied and reported in this paper. The test results demonstrate that the VCSEL-pumped solid-state laser is an effective and compact laser tool for laser remote sensing applications.

InGaAs-OI Substrate Fabrication on a 300 mm Wafer

Directory of Open Access Journals (Sweden)

Sebastien Sollier

2016-09-01

Full Text Available In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs wafer on insulator (InGaAs-OI substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low temperature direct wafer bonding (DWB and Smart CutTM technology. Three key process steps of the integration were therefore specifically developed and optimized. The first one was the epitaxial growing process, designed to reduce the surface roughness of the InGaAs film. Second, direct wafer bonding conditions were investigated and optimized to achieve non-defective bonding up to 600 °C. Finally, we adapted the splitting condition to detach the InGaAs layer according to epitaxial stack specifications. The paper presents the overall process flow that achieved InGaAs-OI, the required optimization, and the associated characterizations, namely atomic force microscopy (AFM, scanning acoustic microscopy (SAM, and HR-XRD, to insure the crystalline quality of the post transferred layer.

Mid-infrared two-photon absorption in an extended-wavelength InGaAs photodetector

Science.gov (United States)

Piccardo, Marco; Rubin, Noah A.; Meadowcroft, Lauren; Chevalier, Paul; Yuan, Henry; Kimchi, Joseph; Capasso, Federico

2018-01-01

We investigate the nonlinear optical response of a commercial extended-wavelength In0.81Ga0.19As uncooled photodetector. Degenerate two-photon absorption in the mid-infrared range is observed using a quantum cascade laser emitting at λ = 4.5 μm as the excitation source. From the measured two-photon photocurrent signal, we extract a two-photon absorption coefficient β(2) = 0.6 ± 0.2 cm/MW, in agreement with the theoretical value obtained from the Eg-3 scaling law. Considering the wide spectral range covered by extended-wavelength InxGa1-xAs alloys, this result holds promise for applications based on two-photon absorption for this family of materials at wavelengths between 1.8 and 5.6 μm.

Laser in urology

International Nuclear Information System (INIS)

Breisland, H.O.

1991-01-01

The neodymium YAG laser is particularly suited for endoscopic urologic surgery because the YAG laser light can be conducted in flexible fibers. Superficial bladder tumours can be treated under local anaesthesia in the outpatient department. The frequency of local recurrences is low, significantly lower than after electrosection or electrocoagulation. Selected cases of T2-muscle invasive bladder tumours can be cured with laser coagulation applied subsequently to transurethral resection. Combined treatment with electrosection and laser coagulation of localized prostatic cancer is a promising method which compares favourably with results obtained by other treatment modalities. Tumours in the upper urinary tract can be laser-treated through ureteroscopes or nephroscopes, but the treatment should be limited to low stage, low grade tumours. Laser is the treatment of choice for intraurethral condylomatas. Laser treatment of penil carcinoma gives excellent cosmetic and functional results and few local recurrences. Laser lithotripsy is a new technique for treatment of ureteric stones and photodynamic laser therapy is a promising tecnique for treatment of carcinoma in situ in the bladder empithelium. However, neither of these techniques are available for clinical use in Norway as yet. 17 refs., 3 figs., 1 tabs

Laser-induced interactions

International Nuclear Information System (INIS)

Green, W.R.

1979-01-01

This dissertation discusses some of the new ways that lasers can be used to control the energy flow in a medium. Experimental and theoretical considerations of the laser-induced collision are discussed. The laser-induced collision is a process in which a laser is used to selectively transfer energy from a state in one atomic or molecular species to another state in a different species. The first experimental demonstration of this process is described, along with later experiments in which lasers were used to create collisional cross sections as large as 10 - 13 cm 2 . Laser-induced collisions utilizing both a dipole-dipole interaction and dipole-quadrupole interaction have been experimentally demonstrated. The theoretical aspects of other related processes such as laser-induced spin-exchange, collision induced Raman emission, and laser-induced charge transfer are discussed. Experimental systems that could be used to demonstrate these various processes are presented. An experiment which produced an inversion of the resonance line of an ion by optical pumping of the neutral atom is described. This type of scheme has been proposed as a possible method for constructing VUV and x-ray lasers

Multimegajoule laser project: new compact multipass laser design

International Nuclear Information System (INIS)

Holzrichter, J.F.

1985-01-01

A simple laser design that has the fewest laser components of all fusion systems that the authors have studied and that packs closely, thus minimizing space requirements is shown. The Advanced Laser Program objectives are determined by the requirements of the subsystems. The requirements consists of the following elements: high damage thresholds on reflectors; AR layers and dichroic coatings; high-efficiency amplifiers; low-cost production of laser glass, pulse power, and optical elements; and special optical elements, such as an effective phase conjugator and isolator. The combination of a compact architecture and lower-cost, higher-performance components can lead to significant reduction in overall system cost

Laser Propulsion - Quo Vadis

International Nuclear Information System (INIS)

Bohn, Willy L.

2008-01-01

First, an introductory overview of the different types of laser propulsion techniques will be given and illustrated by some historical examples. Second, laser devices available for basic experiments will be reviewed ranging from low power lasers sources to inertial confinement laser facilities. Subsequently, a status of work will show the impasse in which the laser propulsion community is currently engaged. Revisiting the basic relations leads to new avenues in ablative and direct laser propulsion for ground based and space based applications. Hereby, special attention will be devoted to the impact of emerging ultra-short pulse lasers on the coupling coefficient and specific impulse. In particular, laser sources and laser propulsion techniques will be tested in microgravity environment. A novel approach to debris removal will be discussed with respect to the Satellite Laser Ranging (SRL) facilities. Finally, some non technical issues will be raised aimed at the future prospects of laser propulsion in the international community

Distributed feedback dye laser pumped with copper-vapor laser emission

Energy Technology Data Exchange (ETDEWEB)

Mirza, S Yu; Soldatov, A N; Sukhanov, V B

1983-10-01

The power-spectrum characteristics of the emission of a distributed feedback dye laser pumped with a copper vapor laser have been studied. Laser action has been observed in five dyes over a tuning range of 530-723 nm with an efficiency of 12.4%. The specfic features of the distributed feedback dye laser operating at pulse repetition rates of 4 kHz are discussed.

On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

International Nuclear Information System (INIS)

Zhukov, A. E.; Asryan, L. V.; Semenova, E. S.; Zubov, F. I.; Kryzhanovskaya, N. V.; Maximov, M. V.

2015-01-01

Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In 0.232 Al 0.594 Ga 0.174 As/Al 0.355 Ga 0.645 As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution

Influence of the laser pulse duration on laser-produced plasma properties

International Nuclear Information System (INIS)

Drogoff, B Le; Margot, J; Vidal, F; Laville, S; Chaker, M; Sabsabi, M; Johnston, T W; Barthelemy, O

2004-01-01

In the framework of laser-induced plasma spectroscopy (LIPS) applications, time-resolved characteristics of laser-produced aluminium plasmas in air at atmospheric pressure are investigated for laser pulse durations ranging from 100 fs to 270 ps. Measurements show that for delays after the laser pulse longer than ∼100 ns, the plasma temperature increases slightly with the laser pulse duration, while the electron density is independent of it. In addition, as the pulse duration increases, the plasma radiation emission lasts longer and the spectral lines arise later from the continuum emission. The time dependence of the continuum emission appears to be similar whatever the duration of the laser pulse is, while the temporal evolution of the line emission seems to be affected mainly by the plasma temperature. Finally, as far as spectrochemical applications (such as LIPS) of laser-produced plasmas are concerned, this study highlights the importance of the choice of appropriate temporal gating parameters for each laser pulse duration

Laser cleaning of pulsed laser deposited rhodium films for fusion diagnostic mirrors

International Nuclear Information System (INIS)

Uccello, A.; Maffini, A.; Dellasega, D.; Passoni, M.

2013-01-01

Highlights: ► Pulsed laser deposition is exploited to produce Rh films for first mirrors. ► Pulsed laser deposition is exploited to produce tokamak-like C contaminants. ► Rh laser damage threshold has been evaluated for infrared pulses. ► Laser cleaning of C contaminated Rh films gives promising results. -- Abstract: In this paper an experimental investigation on the laser cleaning process of rhodium films, potentially candidates to be used as tokamak first mirrors (FMs), from redeposited carbon contaminants is presented. A relevant issue that lowers mirror's performance during tokamak operations is the redeposition of sputtered material from the first wall on their surface. Among all the possible techniques, laser cleaning, in which a train of laser pulses is launched to the surface that has to be treated, is a method to potentially mitigate this problem. The same laser system (Q-switched Nd:YAG laser with a fundamental wavelength of 1064-nm and 7-ns pulses) has been employed with three aims: (i) production by pulsed laser deposition (PLD) of Rh film mirrors, (ii) production by PLD of C deposits with controlled morphology, and (iii) investigation of the laser cleaning method onto C contaminated Rh samples. The evaluation of Rh films laser damage threshold, as a function of fluence and number of pulses, is discussed. Then, the C/Rh films have been cleaned by the laser beam. The exposed zones have been characterized by visual inspection and scanning electron microscopy (SEM), showing promising results

Attenuation of laser power of a focused Gaussian beam during interaction between a laser and powder in coaxial laser cladding

International Nuclear Information System (INIS)

Liu Jichang; Li Lijun; Zhang Yuanzhong; Xie Xiaozhu

2005-01-01

The power of a focused laser beam with a Gaussian intensity profile attenuated by powder in coaxial laser cladding is investigated experimentally and theoretically, and its resolution model is developed. With some assumptions, it is concluded that the attenuation of laser power is an exponential function and is determined by the powder feed rate, particle moving speed, spraying angles and waist positions and diameters of the laser beam and powder flow, grain diameter and run of the laser beam through the powder flow. The attenuation of laser power increases with powder feed rate or run of laser beam through the powder flow. In the experiment presented, 300 W laser power from a focused Gaussian beam is attenuated by a coaxial powder flow. The experimental results agree well with the values calculated with the developed model

Tunable laser applications

CERN Document Server

Duarte, FJ

2008-01-01

Introduction F. J. Duarte Spectroscopic Applications of Tunable Optical Parametric Oscillators B. J. Orr, R. T. White, and Y. He Solid-State Dye Lasers Costela, I. García-Moreno, and R. Sastre Tunable Lasers Based on Dye-Doped Polymer Gain Media Incorporating Homogeneous Distributions of Functional Nanoparticles F. J. Duarte and R. O. James Broadly Tunable External-Cavity Semiconductor Lasers F. J. Duarte Tunable Fiber Lasers T. M. Shay and F. J. Duarte Fiber Laser Overview and Medical Applications

Greco Laser-matter interaction

International Nuclear Information System (INIS)

1986-01-01

Research program in 1985 at GRECO ILM (Group of Coordinated Research: Interaction Laser Matter) continued with its principal direction in fundamental physics of laser inertial confinement; also researches on X-ray lasers hare been undergone and new high power laser application fields with particle acceleration, material processing and X-ray sources. A six beam laser was operated. Wavelength effects were studied. Atomic physics was deeply stressed as dense medium diagnostics from multicharged ions. Research development in ultra-dense medium was also important X-ray laser research gave outstanding results. New research fields were developed this year: laser acceleration of particles by wave beating or Raman instability; dense laser produced plasma use as X-ray source; material processing by laser shocks [fr

Laser applications in materials processing

International Nuclear Information System (INIS)

Ready, J.F.

1980-01-01

The seminar focused on laser annealing of semiconductors, laser processing of semiconductor devices and formation of coatings and powders, surface modification with lasers, and specialized laser processing methods. Papers were presented on the theoretical analysis of thermal and mass transport during laser annealing, applications of scanning continuous-wave and pulsed lasers in silicon technology, laser techniques in photovoltaic applications, and the synthesis of ceramic powders from laser-heated gas-phase reactants. Other papers included: reflectance changes of metals during laser irradiation, surface-alloying using high-power continuous lasers, laser growth of silicon ribbon, and commercial laser-shock processes

Monitoring non-pseudomorphic epitaxial growth of spinel/perovskite oxide heterostructures by reflection high-energy electron diffraction

Energy Technology Data Exchange (ETDEWEB)

Schütz, P.; Pfaff, F.; Scheiderer, P.; Sing, M.; Claessen, R. [Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)

2015-02-09

Pulsed laser deposition of spinel γ-Al{sub 2}O{sub 3} thin films on bulk perovskite SrTiO{sub 3} is monitored by high-pressure reflection high-energy electron diffraction (RHEED). The heteroepitaxial combination of two materials with different crystal structures is found to be inherently accompanied by a strong intensity modulation of bulk diffraction patterns from inelastically scattered electrons, which impedes the observation of RHEED intensity oscillations. Avoiding such electron surface-wave resonance enhancement by de-tuning the RHEED geometry allows for the separate observation of the surface-diffracted specular RHEED signal and thus the real-time monitoring of sub-unit cell two-dimensional layer-by-layer growth. Since these challenges are essentially rooted in the difference between film and substrate crystal structure, our findings are of relevance for the growth of any heterostructure combining oxides with different crystal symmetry and may thus facilitate the search for novel oxide heterointerfaces.

HF laser

International Nuclear Information System (INIS)

Suzuki, Kazuya; Iwasaki, Matae

1977-01-01

A review is made of the research and development of HF chemical laser and its related work. Many gaseous compounds are used as laser media successfully; reaction kinetics and technological problems are described. The hybrid chemical laser of HF-CO 2 system and the topics related to the isotope separation are also included. (auth.)

LIDAR pulse coding for high resolution range imaging at improved refresh rate.

Science.gov (United States)

Kim, Gunzung; Park, Yongwan

2016-10-17

In this study, a light detection and ranging system (LIDAR) was designed that codes pixel location information in its laser pulses using the direct- sequence optical code division multiple access (DS-OCDMA) method in conjunction with a scanning-based microelectromechanical system (MEMS) mirror. This LIDAR can constantly measure the distance without idle listening time for the return of reflected waves because its laser pulses include pixel location information encoded by applying the DS-OCDMA. Therefore, this emits in each bearing direction without waiting for the reflected wave to return. The MEMS mirror is used to deflect and steer the coded laser pulses in the desired bearing direction. The receiver digitizes the received reflected pulses using a low-temperature-grown (LTG) indium gallium arsenide (InGaAs) based photoconductive antenna (PCA) and the time-to-digital converter (TDC) and demodulates them using the DS-OCDMA. When all of the reflected waves corresponding to the pixels forming a range image are received, the proposed LIDAR generates a point cloud based on the time-of-flight (ToF) of each reflected wave. The results of simulations performed on the proposed LIDAR are compared with simulations of existing LIDARs.

Multibeam Fibre Laser Cutting

DEFF Research Database (Denmark)

Olsen, Flemming Ove

The appearance of the high power high brilliance fibre laser has opened for new possibilities in laser materials processing. In laser cutting this laser has demonstrated high cutting performance compared to the dominating cutting laser, the CO2-laser. However, quality problems in fibre......-laser cutting have until now limited its application in metal cutting. In this paper the first results of proof-of-principle studies applying a new approach (patent pending) for laser cutting with high brightness short wavelength lasers will be presented. In the approach, multi beam patterns are applied...... to control the melt flow out of the cut kerf resulting in improved cut quality in metal cutting. The beam patterns in this study are created by splitting up beams from 2 single mode fibre lasers and combining these beams into a pattern in the cut kerf. The results are obtained with a total of 550 W of single...

Multibeam fiber laser cutting

DEFF Research Database (Denmark)

Olsen, Flemming Ove; Hansen, Klaus Schütt; Nielsen, Jakob Skov

2009-01-01

The appearance of the high power high brilliance fiber laser has opened for new possibilities in laser materials processing. In laser cutting this laser has demonstrated high cutting performance compared to the dominating Cutting laser, the CO2 laser. However, quality problems in fiber......-laser cutting have until now limited its application to metal cutting. In this paper the first results of proof-of-principle Studies applying a new approach (patent pending) for laser cutting with high brightness and short wavelength lasers will be presented. In the approach, multibeam patterns are applied...... to control the melt flow out of the cut kerf resulting in improved cut quality in metal cutting. The beam patterns in this study are created by splitting up beams from two single mode fiber lasers and combining these beams into a pattern in the cut kerf. The results are obtained with a total of 550 W...

Lasers in periodontics.

Science.gov (United States)

Elavarasu, Sugumari; Naveen, Devisree; Thangavelu, Arthiie

2012-08-01

Laser is one of the most captivating technologies in dental practice since Theodore Maiman in 1960 invented the ruby laser. Lasers in dentistry have revolutionized several areas of treatment in the last three and a half decades of the 20(th) century. Introduced as an alternative to mechanical cutting device, laser has now become an instrument of choice in many dental applications. Evidence suggests its use in initial periodontal therapy, surgery, and more recently, its utility in salvaging implant opens up a wide range of applications. More research with better designs are a necessity before lasers can become a part of dental armamentarium. This paper gives an insight to laser in periodontics.

Laser-driven ion acceleration with hollow laser beams

International Nuclear Information System (INIS)

Brabetz, C.; Kester, O.; Busold, S.; Bagnoud, V.; Cowan, T.; Deppert, O.; Jahn, D.; Roth, M.; Schumacher, D.

2015-01-01

The laser-driven acceleration of protons from thin foils irradiated by hollow high-intensity laser beams in the regime of target normal sheath acceleration (TNSA) is reported for the first time. The use of hollow beams aims at reducing the initial emission solid angle of the TNSA source, due to a flattening of the electron sheath at the target rear side. The experiments were conducted at the PHELIX laser facility at the GSI Helmholtzzentrum für Schwerionenforschung GmbH with laser intensities in the range from 10 18  W cm −2 to 10 20  W cm −2 . We observed an average reduction of the half opening angle by (3.07±0.42)° or (13.2±2.0)% when the targets have a thickness between 12 μm and 14 μm. In addition, the highest proton energies were achieved with the hollow laser beam in comparison to the typical Gaussian focal spot

Laser-driven ion acceleration with hollow laser beams

Energy Technology Data Exchange (ETDEWEB)

Brabetz, C., E-mail: c.brabetz@gsi.de; Kester, O. [Goethe-Universität Frankfurt am Main, 60323 Frankfurt (Germany); GSI Helmholtzzentrum für Schwerionenforschung GmbH, 64291 Darmstadt (Germany); Busold, S.; Bagnoud, V. [GSI Helmholtzzentrum für Schwerionenforschung GmbH, 64291 Darmstadt (Germany); Helmholtz-Institut Jena, 07743 Jena (Germany); Cowan, T. [Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Technische Universität Dresden, 01069 Dresden (Germany); Deppert, O.; Jahn, D.; Roth, M. [Technische Universität Darmstadt, 64277 Darmstadt (Germany); Schumacher, D. [GSI Helmholtzzentrum für Schwerionenforschung GmbH, 64291 Darmstadt (Germany)

2015-01-15

The laser-driven acceleration of protons from thin foils irradiated by hollow high-intensity laser beams in the regime of target normal sheath acceleration (TNSA) is reported for the first time. The use of hollow beams aims at reducing the initial emission solid angle of the TNSA source, due to a flattening of the electron sheath at the target rear side. The experiments were conducted at the PHELIX laser facility at the GSI Helmholtzzentrum für Schwerionenforschung GmbH with laser intensities in the range from 10{sup 18} W cm{sup −2} to 10{sup 20} W cm{sup −2}. We observed an average reduction of the half opening angle by (3.07±0.42)° or (13.2±2.0)% when the targets have a thickness between 12 μm and 14 μm. In addition, the highest proton energies were achieved with the hollow laser beam in comparison to the typical Gaussian focal spot.

High-power pulsed lasers

International Nuclear Information System (INIS)

Holzrichter, J.F.

1980-01-01

The ideas that led to the successful construction and operation of large multibeam fusion lasers at the Lawrence Livermore Laboratory are reviewed. These lasers are based on the use of Nd:glass laser materials. However, most of the concepts are applicable to any laser being designed for fusion experimentation. This report is a summary of lectures given by the author at the 20th Scottish University Summer School in Physics, on Laser Plasma Interaction. This report includes basic concepts of the laser plasma system, a discussion of lasers that are useful for short-pulse, high-power operation, laser design constraints, optical diagnostics, and system organization

Coherent dual-frequency lidar system design for distance and speed measurements

Science.gov (United States)

Zheng, Xingyuan; Zhao, Changming; Zhang, Haiyang; Zheng, Zheng; Yang, Hongzhi

2018-01-01

Lidars have a wide range of applications in military detection and civilian remote sensing. Coherent Dual-Frequency Lidar (CDFL) is a new concept of laser radar that is using electrical coherence instead of optical coherence. It uses laser with two coherent frequency components as transmitting wave. The method is based on the use of an optically-carried radio frequency (RF) signal, which is the frequency difference between the two components, which is specially designed for distance and speed measurements. It not only ensures the system has the characteristics of high spatial resolution, high ranging and velocity precision of laser radar, but also can use mature signal processing technology of microwave radar, and it is a research direction that attracts more concern in recent years. A CDFL detection system is constructed and field experiment is carried out. In the system, a narrow linewidth fiber laser with a wavelength of 1064nm is adopted. The dual-frequency laser with frequency difference of 200MHz and 200.6MHz is obtained by acousto-optic frequency shift and recombination. The maximum output power of dual frequency laser is 200mW. The receiver consists of all-fiber balanced InGaAs photo-detector and homemade analog signal processing board. The experimental results show that the distance resolution and velocity resolution of the system are 0.1m and 0.1m/s separately when the working distance is greater than 200m, and the spatial resolution is 0.5mrad.

Advanced lasers for fusion

International Nuclear Information System (INIS)

Krupke, W.F.; George, E.V.; Haas, R.A.

1979-01-01

Laser drive systems' performance requirements for fusion reactors are developed following a review of the principles of inertial confinement fusion and of the technical status of fusion research lasers (Nd:glass; CO 2 , iodine). These requirements are analyzed in the context of energy-storing laser media with respect to laser systems design issues: optical damage and breakdown, medium excitation, parasitics and superfluorescence depumping, energy extraction physics, medium optical quality, and gas flow. Three types of energy-storing laser media of potential utility are identified and singled out for detailed review: (1) Group VI atomic lasers, (2) rare earth solid state hybrid lasers, and (3) rare earth molecular vapor lasers. The use of highly-radiative laser media, particularly the rare-gas monohalide excimers, are discussed in the context of short pulse fusion applications. The concept of backward wave Raman pulse compression is considered as an attractive technique for this purpose. The basic physics and device parameters of these four laser systems are reviewed and conceptual designs for high energy laser systems are presented. Preliminary estimates for systems efficiencies are given. (Auth.)

Only lasers can be used for low level laser therapy.

Science.gov (United States)

Moskvin, Sergey Vladimirovich

2017-12-01

The question of lasers' exclusivity, as well as the degree of influence of special properties of low-intensity laser illumination (LILI), such as coherence, polarity and monochromaticity, on the effectiveness of low level laser therapy (LLLT) continues to cause arguments. The study analyzes publications from 1973 to 2016, in which laser and conventional light sources are compared, and the following conclusions are drawn. First, there are a lot of publications with incorrect comparison or unfounded statements. Secondly, other sources of light are often meant by LILI without any justification. Thirdly, all studies, in which the comparison is carried out correctly and close parameters of the impact and the model are used, have a firm conclusion that laser light is much more effective. Fourthly, it is uniquely identified that the most important parameter that determines the efficiency of lasers is monochromaticity, i.e., a much narrower spectral width than for all other light sources. Only laser light sources can be used for LLLT! © Author(s) 2017. This article is published with open access by China Medical University.

Laser Research Lab

Data.gov (United States)

Federal Laboratory Consortium — The Laser Research lab is thecenter for the development of new laser sources, nonlinear optical materials, frequency conversion processes and laser-based sensors for...

Laser Cutting of Thick Diamond Films Using Low-Power Laser

Energy Technology Data Exchange (ETDEWEB)

Park, Y.J.; Baik, Y.J. [Korea Institute of Science and Technology, Seoul (Korea)

2000-02-01

Laser cutting of thick diamond films is studied rising a low-power(10 W) copper vapor laser. Due to the existence of the saturation depth in laser cutting, thick diamond films are not easily cut by low-power lasers. In this study, we have adopted a low thermal- conductivity underlayer of alumina and a heating stage (up to 500 deg. C in air) to prevent the laser energy from consuming-out and, in turn, enhance the cutting efficiency. Aspect ratio increases twice from 3.5 to 7 when the alumina underlayer used. Adopting a heating stage also increases aspect ratio and more than 10 is obtained at higher temperatures than 400 deg. C. These results show that thick diamond films can be cut, with low-power lasers, simply by modifying the thermal property of underlayer. (author). 13 refs., 5 figs.

Laser solenoid: an alternate use of lasers in fusion power

International Nuclear Information System (INIS)

Rose, P.H.

1977-01-01

A unique laser assisted fusion approach is under development at Mathematical Sciences Northwest, Inc. (MSNW). This approach captures one of the most developed aspects of high energy laser technology, the efficient, large, scalable, pulsed electron beam initiated, electric discharge, CO 2 infrared laser. This advanced technology is then combined with the simple geometry of a linear magnetic confinement system. The laser solenoid concept will be described, current work and experimental progress will be discussed, and the technological problems of building such a system will be assessed. Finally a comparison will be made of the technology and economics for the laser solenoid and alternative fusion approaches

Organic solid-state lasers

CERN Document Server

Forget, Sébastien

2013-01-01

Organic lasers are broadly tunable coherent sources, potentially compact, convenient and manufactured at low-costs. Appeared in the mid 60’s as solid-state alternatives for liquid dye lasers, they recently gained a new dimension after the demonstration of organic semiconductor lasers in the 90's. More recently, new perspectives appeared at the nanoscale, with organic polariton and surface plasmon lasers. After a brief reminder to laser physics, a first chapter exposes what makes organic solid-state organic lasers specific. The laser architectures used in organic lasers are then reviewed, with a state-of-the-art review of the performances of devices with regard to output power, threshold, lifetime, beam quality etc. A survey of the recent trends in the field is given, highlighting the latest developments with a special focus on the challenges remaining for achieving direct electrical pumping of organic semiconductor lasers. A last chapter covers the applications of organic solid-state lasers.

Quantum well lasers

CERN Document Server

Zory, Jr, Peter S; Kelley, Paul

1993-01-01

This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist.* The first comprehensive book-length treatment of quantum well lasers* Provides a detailed treatment

Lasers in space.

CSIR Research Space (South Africa)

Michaelis, MM

2008-04-01

Full Text Available cube, laser beam reflectors, placed on the Moon half a century ago. These early achievements will soon be followed by a plethora of experiments involving lasers in low earth orbit (LEO) or at Lagrange points. And not much later, laser communications... will stretch out as far as Mars and beyond. One important low Earth orbit (LEO) application is the removal of space debris by Earth based or LEO relayed lasers as promoted by Phipps et al.3. Another is military communication. The prominent L1 laser space...

Bleaching Dengan Teknologi Laser

OpenAIRE

Eliwaty

2008-01-01

Penulisan tentang bleaching dengan laser dimaksudkan untuk menambah wawasan serta pengetahuan dari pembaca di bidang kedokteran gigi. Macam-macam laser yang dipergunakan dalam bleaching yaitu argon, CO2 serta dioda laser. Contoh merek produk laser yaitu Blulaze, Dentcure untuk argonlaser, Novapulse untuk C02 serta Opus 5 untuk dioda laser. Laser bleaching hasilnya dapat dicapai dalam satu kunjungan saja, cepat, efisien namun biayanya relatif mahal, dapat menimbulkan burn, sensitivitas se...

Diode-pumped solid state laser. (Part V). ; Short pulse laser oscillation. Handotai laser reiki kotai laser. 5. ; Tan pulse hasshin

Energy Technology Data Exchange (ETDEWEB)

Kuwabara, M.; Bando, N. (Asahi Glass Co. Ltd., Tokyo (Japan))

1991-12-25

A semiconductor laser (LD) excited solid state laser using an LD as an excited light source is under discussion for its practical applications to measurements, processing, communications, office automation, and medical areas. This paper describes the discussions given on the short pulse transmission using AOQ switching elements in the LD excited solid state laser with a long wave length band (1.3{mu}m), which is expected of its application in the communications and measurements area. Based on a possibility of raising a measurements resolution by making the pluses in the LD excited solid state laser, and experiments were performed using Nd:YLF as a laser host. as a results, it was found that the smaller the effective mode volume V {sub eff},the smaller the pulse width, and that the ratio of number of initial inversion distribution (N{sub i}/N{sub t}), an important parameter to determine pulse widths, can be obtained from the ratio of the LD exciting light to the input power (P{sub in}/P{sub t}). 7 refs., 14 figs., 2 tabs.

Wavelength sweepable laser source

DEFF Research Database (Denmark)

2014-01-01

Wavelength sweepable laser source is disclosed, wherein the laser source is a semiconductor laser source adapted for generating laser light at a lasing wavelength. The laser source comprises a substrate, a first reflector, and a second reflector. The first and second reflector together defines...... and having a rest position, the second reflector and suspension together defining a microelectromechanical MEMS oscillator. The MEMS oscillator has a resonance frequency and is adapted for oscillating the second reflector on either side of the rest position.; The laser source further comprises electrical...... connections adapted for applying an electric field to the MEMS oscillator. Furthermore, a laser source system and a method of use of the laser source are disclosed....

Mathematical modeling of a photovoltaic-laser energy converter for iodine laser radiation

Science.gov (United States)

Walker, Gilbert H.; Heinbockel, John H.

1987-01-01

Space-based laser power systems will require converters to change laser radiation into electricity. Vertical junction photovoltaic converters are promising devices for this use. A promising laser for the laser power station is the t-C4F9I laser which emits radiation at a wavelength of 1.315 microns. This paper describes the results of mathematical modeling of a photovoltaic-laser energy converter for use with this laser. The material for this photovoltaic converter is Ga(53)In(47)As which has a bandgap energy of 0.94 eV, slightly below the energy of the laser photons (0.943 eV). Results of a study optimizing the converter parameters are presented. Calculated efficiency for a 1000 vertical junction converter is 42.5 percent at a power density of 1 x 10 to the 3d power w/sq cm.

Laser Materials and Laser Spectroscopy - A Satellite Meeting of IQEC '88

Science.gov (United States)

Wang, Zhijiang; Zhang, Zhiming

1989-03-01

The Table of Contents for the book is as follows: * Laser Materials * Laser Site Spectroscopy of Transition Metal Ions in Glass * Spectroscopy of Chromium Doped Tunable Laser Materials * Spectroscopic Properties of Nd3+ Ions in LaMgAl11O19 Crystal * Spectral Study and 2.938 μm Laser Emission of Er3+ in the Y3Al5O12 Crystal * Raman-infrared Spectra and Radiationless Relaxation of Laser Crystal NdAl3(BO3)4 * A Study on HB and FLN in BaFCl0.5Br0.5:Sm2+ at 77K * Pair-pumped Upconversion Solid State Lasers * CW Upconversion Laser Action in Neodymium and Erbium doped Solids * Ultra-high Sensitive Upconversion Fluorescence of YbF3 Doped with Trace Tm3+ and Er3+ * The Growth and Properties of NYAB and EYAB Multifunctional Crystal * Study on Fluorescence and Laser Light of Er3+ in Glass * Growth and Properties of Single Crystal Fibers for Laser Materials * A Study on the Quality of Sapphire, Ruby and Ti3+ Doped Sapphire Grown by Temperature Gradient Technique (TGT) and Czochralski Technique (CZ) * The Measurement of Output Property of Ti3+ Al2O3 Laser Crystal * An Xα Study of the Laser Crystal MgF2 : V2+ * Q-switched NAB Laser * Miniature YAG Lasers * Study of High Efficiency {LiF}:{F}^-_2 Color Center Crystals * Study on the Formation Conditions and Optical Properties of (F2+)H Color Center in NaCl:OH- Crystals * Novel Spectroscopic Properties of {LiF}:{F}^+_3 - {F}_2 Mixed Color Centers Laser Crystals * Terraced Substrate Visible GaAlAs Semiconductor Lasers with a Large Optical Cavity * The Temperature Dependence of Gain Spectra, Threshold Current and Auger Recombination in InGaAsP-InP Double Heterojunction Laser diode * Time-resolved Photoluminescence and Energy Transfer of Bound Excitons in GaP:N Crystals * Optical Limiting with Semiconductors * A Critical Review of High-efficiency Crystals for Tunable Lasers * Parametric Scattering in β - BaB2O4 Crystal Induced by Picosecond Pulses * Generation of Picosecond Pulses at 193 nm by Frequency Mixing in β - BaB2O4

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

International Nuclear Information System (INIS)

Li, S.; Alverson, S.; Bohler, D.; Egger, A.; Fry, A.

2017-01-01

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency. Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μm. In conclusion, our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

Science.gov (United States)

Li, S.; Alverson, S.; Bohler, D.; Egger, A.; Fry, A.; Gilevich, S.; Huang, Z.; Miahnahri, A.; Ratner, D.; Robinson, J.; Zhou, F.

2017-08-01

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency. Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μ m . Our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.

Laser sampling

International Nuclear Information System (INIS)

Gorbatenko, A A; Revina, E I

2015-01-01

The review is devoted to the major advances in laser sampling. The advantages and drawbacks of the technique are considered. Specific features of combinations of laser sampling with various instrumental analytical methods, primarily inductively coupled plasma mass spectrometry, are discussed. Examples of practical implementation of hybrid methods involving laser sampling as well as corresponding analytical characteristics are presented. The bibliography includes 78 references

Studies on corrosion protection of laser hybrid welded AISI 316 by laser remelting

DEFF Research Database (Denmark)

Olsen, Flemming Ove; Ambat, Rajan; Rasmussen, A.J.

2005-01-01

laser surface melting on microstructure and corrosion behaviour of AISI 316L welds. Welding and laser treatment parameters were varied. General corrosion behaviour of the weld and laser treated surface was characterised using a gel visualization test. The local electrochemistry of the weld and laser......Unlike in autogenous laser welding, hybrid laser welding of stainless steel could introduce grain boundary carbides due to low cooling rates. Formation of grain boundary carbides leads to reduced corrosion properties. Studies have initially been carried out on hybrid laser welding and subsequent...... treated surface was investigated using a novel micro electrochemical technique with a tip resolution of ~1 mm. Results show that hybrid laser welding of 316L has increased corrosion susceptibility probably as a result of grain boundary carbide formation. However a suitable post laser treatment could...

Excimer laser decontamination

Science.gov (United States)

Sentis, Marc L.; Delaporte, Philippe C.; Marine, Wladimir; Uteza, Olivier P.

2000-04-01

The application of excimer laser ablation process to the decontamination of radioactive surfaces is discussed. This technology is very attractive because it allows to efficiently remove the contaminated particles without secondary waste production. To demonstrate the capability of such technology to efficiently decontaminate large area, we studied and developed a prototype which include a XeCl laser, an optical fiber delivery system and an ablated particles collection cell. The main physical processes taking place during UV laser ablation will be explained. The influence of laser wavelength, pulse duration and absorption coefficient of material will be discussed. Special studies have been performed to understand the processes which limit the transmission of high average power excimer laser through optical fiber, and to determine the laser conditions to optimize the value of this transmission. An in-situ spectroscopic analysis of laser ablation plasma allows the real time control of the decontamination. The results obtained for painting or metallic oxides removal from stainless steel surfaces will be presented.

Efficient Ho:YLF laser pumped by a Tm:fiber laser

CSIR Research Space (South Africa)

Koen, W

2013-10-01

Full Text Available A thulium fiber laser pumped Ho:YLF laser delivering 45.1 W in a near diffraction limited beam when pumped with 84.7 W is demonstrated. The optical-to-optical efficiency of 53 % compares favorably with similar Ho:YAG lasers....

Laser Safety Evaluation of the MILES and Mini MILES Laser Emitting Components; TOPICAL

International Nuclear Information System (INIS)

AUGUSTONI, ARNOLD L.

2002-01-01

Laser safety evaluation and output emission measurements were performed (during October and November 2001) on SNL MILES and Mini MILES laser emitting components. The purpose, to verify that these components, not only meet the Class 1 (eye safe) laser hazard criteria of the CDRH Compliance Guide for Laser Products and 21 CFR 1040 Laser Product Performance Standard; but also meet the more stringent ANSI Std. z136.1-2000 Safe Use of Lasers conditions for Class 1 lasers that govern SNL laser operations. The results of these measurements confirmed that all of the Small Arms Laser Transmitters, as currently set (''as is''), meet the Class 1 criteria. Several of the Mini MILES Small Arms Transmitters did not. These were modified and re-tested and now meet the Class 1 laser hazard criteria. All but one System Controllers (hand held and rifle stock) met class 1 criteria for single trigger pulls and all presented Class 3a laser hazard levels if the trigger is held (continuous emission) for more than 5 seconds on a single point target. All units were Class 3a for ''aided'' viewing. These units were modified and re-tested and now meet the Class 1 hazard criteria for both ''aided'' as well as ''unaided'' viewing. All the Claymore Mine laser emitters tested are laser hazard Class 1 for both ''aided'' as well as ''unaided'' viewing

Laser ablation principles and applications

CERN Document Server

1994-01-01

Laser Ablation provides a broad picture of the current understanding of laser ablation and its many applications, from the views of key contributors to the field. Discussed are in detail the electronic processes in laser ablation of semiconductors and insulators, the post-ionization of laser-desorbed biomolecules, Fourier-transform mass spectroscopy, the interaction of laser radiation with organic polymers, laser ablation and optical surface damage, laser desorption/ablation with laser detection, and laser ablation of superconducting thin films.

CO2-laser fusion

International Nuclear Information System (INIS)

Stark, E.E. Jr.

1978-01-01

The basic concept of laser fusion is described, with a set of requirements on the laser system. Systems and applications concepts are presented and discussed. The CO 2 laser's characteristics and advantages for laser fusion are described. Finally, technological issues in the development of CO 2 laser systems for fusion applications are discussed

Laser dynamics of asynchronous rational harmonic mode-locked fiber soliton lasers

International Nuclear Information System (INIS)

Jyu, Siao-Shan; Jiang, Guo-Hao; Lai, Yinchieh

2013-01-01

Laser dynamics of asynchronous rational harmonic mode-locked (ARHM) fiber soliton lasers are investigated in detail. In particular, based on the unique laser dynamics of asynchronous mode-locking, we have developed a new method for determining the effective active modulation strength in situ for ARHM lasers. By measuring the magnitudes of the slowly oscillating pulse timing position and central frequency, the effective phase modulation strength at the multiplication frequency of rational harmonic mode-locking can be accurately inferred. The method can be a very useful tool for developing ARHM fiber lasers. (paper)

Radiological protection against lasers

Energy Technology Data Exchange (ETDEWEB)

Ballereau, P

1974-04-01

A brief description of the biological effects of laser beams is followed by a review of the factors involved in eye and skin damage (factors linked with the nature of lasers and those linked with the organ affected) and a discussion of the problems involved in the determination of threshold exposure levels. Preventive measures are recommended, according to the type of laser (high-energy pulse laser, continuous laser, gas laser). No legislation on the subject exists in France or in Europe. Types of lasers marketed, threshold exposure levels for eye and skin, variations of admissible exposure levels according to wavelength, etc. are presented in tabular form. Nomogram for determination of safe distance for direct vision of a laser is included.

Laser-tissue interaction in tattoo removal by q-switched lasers.

Science.gov (United States)

Barua, Shyamanta

2015-01-01

Q-switched (QS) lasers are widely considered the gold standard for tattoo removal, with excellent clinical results, impressive predictability, and a good safety profile. The generation of giant pulses by the method of Q-switching is responsible for the unique laser-tissue interaction that is seen in tattoo removal by QS lasers. The QS lasers work by impaction and dissolution of the tattoo pigments. Mechanical fragmentation of the tattoo pigments encased in intracellular lamellated organelles followed by their phagocytosis by macrophages is thought to be the major event in the clearance of pigments by QS lasers. A few novel techniques have been tried in recent times to hasten the clearance of tattoo pigments.

Traveling-wave laser-produced-plasma energy source for photoionization laser pumping and lasers incorporating said

Science.gov (United States)

Sher, Mark H.; Macklin, John J.; Harris, Stephen E.

1989-09-26

A traveling-wave, laser-produced-plasma, energy source used to obtain single-pass gain saturation of a photoionization pumped laser. A cylindrical lens is used to focus a pump laser beam to a long line on a target. Grooves are cut in the target to present a surface near normal to the incident beam and to reduce the area, and hence increase the intensity and efficiency, of plasma formation.

5W intracavity frequency-doubled green laser for laser projection

Science.gov (United States)

Yan, Boxia; Bi, Yong; Li, Shu; Wang, Dongdong; Wang, Dongzhou; Qi, Yan; Fang, Tao

2014-11-01

High power green laser has many applications such as high brightness laser projection and large screen laser theater. A compact and high power green-light source has been developed in diode-pumped solid-state laser based on MgO doped periodically poled LiNbO3 (MgO:PPLN). 5W fiber coupled green laser is achieved by dual path Nd:YVO4/MgO:PPLN intra-cacity frequency-doubled. Single green laser maximum power 2.8W at 532nm is obtained by a 5.5W LD pumped, MgO:PPLN dimensions is 5mm(width)×1mm(thickness)×2mm(length), and the optical to optical conversion efficiency is 51%. The second LD series connected with the one LD, the second path green laser is obtained using the same method. Then the second path light overlap with the first path by the reflection mirrors, then couple into the fiber with a focus mirror. Dual of LD, Nd:YVO4, MgO:PPLN are placed on the same heat sink using a TEC cooling, the operating temperature bandwidth is about 12°C and the stablity is 5% in 96h. A 50×50×17mm3 laser module which generated continuous-wave 5 W green light with high efficiency and width temperature range is demonstrated.

Designing of Raman laser

International Nuclear Information System (INIS)

Zidan, M. D.; Al-Awad, F.; Alsous, M. B.

2005-01-01

In this work, we describe the design of the Raman laser pumped by Frequency doubled Nd-YAG laser (λ=532 nm) to generate new laser wavelengths by shifting the frequency of the Nd-YAG laser to Stokes region (λ 1 =683 nm, λ 2 =953.6 nm, λ 3 =1579.5 nm) and Antistokes region (λ ' 1 =435 nm, λ ' 2 =369.9 nm, λ ' 3=319.8 nm). Laser resonator has been designed to increase the laser gain. It consists of two mirrors, the back mirror transmits the pump laser beam (λ=532 nm) through the Raman tube and reflects all other generated Raman laser lines. Four special front mirrors were made to be used for the four laser lines λ 1 =683 nm, λ 2 =953.6 nm and λ ' 1 = 435 nm, λ ' 2 =369.9 nm. The output energy for the lines υ 1 s, υ 2 s, υ 1 as,υ 2 as was measured. The output energy of the Raman laser was characterized for different H 2 pressure inside the tube. (Author)

Development of Cr,Nd:GSGG laser as a pumping source of Ti:sapphire laser

International Nuclear Information System (INIS)

Tamura, Koji; Arisawa, Takashi

1999-08-01

Since efficiency of Cr,Nd doped gadolinium scandium gallium garnet (GSGG) laser is in principle higher than that of Nd:YAG laser, it can be a highly efficient pumping source for Ti:sapphire laser. We have made GSGG laser, and measured its oscillation properties. It was two times more efficient than Nd:YAG laser at free running mode operation. At Q-switched mode operation, fundamental output of 50 mJ and second harmonics output of 8 mJ were obtained. The developed laser had appropriate spatial profile, temporal duration, long time stability for solid laser pumping. Ti:sapphire laser oscillation was achieved by the second harmonics of GSGG laser. (author)

Soft x-ray lasers

International Nuclear Information System (INIS)

Matthews, D.L.; Rosen, M.D.

1988-01-01

One of the elusive dreams of laser physicists has been the development of an x-ray laser. After 25 years of waiting, the x-ray laser has at last entered the scientific scene, although those now in operation are still laboratory prototypes. They produce soft x rays down to about five nanometers. X-ray lasers retain the usual characteristics of their optical counterparts: a very tight beam, spatial and temporal coherence, and extreme brightness. Present x-ray lasers are nearly 100 times brighter that the next most powerful x-ray source in the world: the electron synchrotron. Although Lawrence Livermore National Laboratory (LLNL) is widely known for its hard-x-ray laser program which has potential applications in the Strategic Defense Initiative, the soft x-ray lasers have no direct military applications. These lasers, and the scientific tools that result from their development, may one day have a place in the design and diagnosis of both laser fusion and hard x-ray lasers. The soft x-ray lasers now in operation at the LLNL have shown great promise but are still in the primitive state. Once x-ray lasers become reliable, efficient, and economical, they will have several important applications. Chief among them might be the creation of holograms of microscopic biological structures too small to be investigated with visible light. 5 figs

History and principle of lasers

International Nuclear Information System (INIS)

Townes, Ch.H.; Schwob, C.; Julien, J.; Forget, S.; Robert-Philip, I.; Balcou, Ph.

2010-01-01

In the first article C.H. Townes, the inventor of the maser, describes the work and ideas that led to the invention of the laser. The second article explains how a laser operate and the third article reviews the main different types of laser: solid lasers, gas lasers, diode lasers and dye lasers

Laser Safety and Hazard Analysis for the Trailer (B70) Based AURA Laser System

International Nuclear Information System (INIS)

AUGUSTONI, ARNOLD L.

2003-01-01

A laser safety and hazard analysis was performed for the AURA laser system based on the 2000 version of the American National Standards Institute's (ANSI) Standard Z136.1, for ''Safe Use of Lasers'' and the 2000 version of the ANSI Standard Z136.6, for ''Safe Use of Lasers Outdoors''. The trailer based AURA laser system is a mobile platform, which is used to perform laser interaction experiments and tests at various national test sites. The trailer (B70) based AURA laser system is generally operated on the United State Air Force Starfire Optical Range (SOR) at Kirtland Air Force Base (KAFB), New Mexico. The laser is used to perform laser interaction testing inside the laser trailer as well as outside the trailer at target sites located at various distances from the exit telescope. In order to protect personnel, who work inside the Nominal Hazard Zone (NHZ), from hazardous laser emission exposures it was necessary to determine the Maximum Permissible Exposure (MPE) for each laser wavelength (wavelength bands) and calculate the appropriate minimum Optical Density (OD min ) of the laser safety eyewear used by authorized personnel and the Nominal Ocular Hazard Distance (NOHD) to protect unauthorized personnel who may have violated the boundaries of the control area and enter into the laser's NHZ

On-Chip Laser-Power Delivery System for Dielectric Laser Accelerators

Science.gov (United States)

Hughes, Tyler W.; Tan, Si; Zhao, Zhexin; Sapra, Neil V.; Leedle, Kenneth J.; Deng, Huiyang; Miao, Yu; Black, Dylan S.; Solgaard, Olav; Harris, James S.; Vuckovic, Jelena; Byer, Robert L.; Fan, Shanhui; England, R. Joel; Lee, Yun Jo; Qi, Minghao

2018-05-01

We propose an on-chip optical-power delivery system for dielectric laser accelerators based on a fractal "tree-network" dielectric waveguide geometry. This system replaces experimentally demanding free-space manipulations of the driving laser beam with chip-integrated techniques based on precise nanofabrication, enabling access to orders-of-magnitude increases in the interaction length and total energy gain for these miniature accelerators. Based on computational modeling, in the relativistic regime, our laser delivery system is estimated to provide 21 keV of energy gain over an acceleration length of 192 μ m with a single laser input, corresponding to a 108-MV/m acceleration gradient. The system may achieve 1 MeV of energy gain over a distance of less than 1 cm by sequentially illuminating 49 identical structures. These findings are verified by detailed numerical simulation and modeling of the subcomponents, and we provide a discussion of the main constraints, challenges, and relevant parameters with regard to on-chip laser coupling for dielectric laser accelerators.

Laser therapy for cancer

Science.gov (United States)

... this page: //medlineplus.gov/ency/patientinstructions/000905.htm Laser therapy for cancer To use the sharing features ... Lasers are also used on the skin. How Laser Therapy is Used Laser therapy can be used ...

Lasers in Cancer Treatment

Science.gov (United States)

... the advantages of laser therapy? What are the disadvantages of laser therapy? What does the future hold ... therapy is appropriate for them. What are the disadvantages of laser therapy? Laser therapy also has several ...

Laser therapy (image)

Science.gov (United States)

A laser is used for many medical purposes. Because the laser beam is so small and precise, it enables ... without injuring surrounding tissue. Some uses of the laser are retinal surgery, excision of lesions, and cauterization ...

Tunable laser optics

CERN Document Server

Duarte, FJ

2015-01-01

This Second Edition of a bestselling book describes the optics and optical principles needed to build lasers. It also highlights the optics instrumentation necessary to characterize laser emissions and focuses on laser-based optical instrumentation. The book emphasizes practical and utilitarian aspects of relevant optics including the essential theory. This revised, expanded, and improved edition contains new material on tunable lasers and discusses relevant topics in quantum optics.

Laser cutting system

Science.gov (United States)

Dougherty, Thomas J

2015-03-03

A workpiece cutting apparatus includes a laser source, a first suction system, and a first finger configured to guide a workpiece as it moves past the laser source. The first finger includes a first end provided adjacent a point where a laser from the laser source cuts the workpiece, and the first end of the first finger includes an aperture in fluid communication with the first suction system.

Laser cooling of solids

CERN Document Server

Petrushkin, S V

2009-01-01

Laser cooling is an important emerging technology in such areas as the cooling of semiconductors. The book examines and suggests solutions for a range of problems in the development of miniature solid-state laser refrigerators, self-cooling solid-state lasers and optical echo-processors. It begins by looking at the basic theory of laser cooling before considering such topics as self-cooling of active elements of solid-state lasers, laser cooling of solid-state information media of optical echo-processors, and problems of cooling solid-state quantum processors. Laser Cooling of Solids is an important contribution to the development of compact laser-powered cryogenic refrigerators, both for the academic community and those in the microelectronics and other industries. Provides a timely review of this promising field of research and discusses the fundamentals and theory of laser cooling Particular attention is given to the physics of cooling processes and the mathematical description of these processes Reviews p...

Study of the interface stability of the metal (Mo, Ni, Pd/HfO2/AlN/InGaAs MOS devices

Directory of Open Access Journals (Sweden)

Huy Binh Do

2017-08-01

Full Text Available The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP. The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2− and OH− ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET.

The growth of noble metals in (112-bar0)-oriented hexagonal close-packed nano-films by epitaxy on Nb(001)

International Nuclear Information System (INIS)

Hueger, E.; Osuch, K.

2005-01-01

The morphology and crystal structure of noble metal nano-films deposited on oxygen contaminated and oxygen-free Nb(001) surfaces have been studied with angle-resolved ultraviolet photoelectron spectroscopy, X-ray photo-electron diffraction, and reflection high energy electron diffraction. In the both cases a deposited noble metal film aligns its direction with the [110] direction of the Nb(001) surface. But, while a noble metal grows on an oxygen contaminated Nb(001) surface with the hexagonal close-packed (hcp) (111) planes parallel to the surface (i.e. in the (111)-oriented face centred cubic phase (fcc)), on a non-contaminated Nb(001) it grows with its hcp planes perpendicular to the surface. The latter happens because in the initial stages of the epitaxy the first two monolayers (MLs) of the noble metal grow pseudomorphically on a contamination-free Nb(001). The pseudomorphic layer is strongly extended parallel to the Nb(001) surface in comparison to its natural fcc (001) plane. As a consequence of the atomic volume conservation principle the out-of-plane lattice of the pseudomorphic layer is contracted. Thus, its body centred tetragonal (110) planes, which stay perpendicular to the surface, contract into denser-packed planes, i.e. in hcp ones. In the direction perpendicular to the surface, where the substrate does not have a direct influence on the film, the pseudomorphic layer relaxes into its natural close-packed phase, i.e. into hcp atomic planes. These planes appear as soon as the third pseudomorphic ML begins to grow. The stacking axis of the planes lies in the (100) surface of Nb and is locked by it. The fact that thick nano-films of Cu (up to 50 MLs), Ag and Au (up to 100 MLs) grow in the (112-bar0)-oriented hcp phase can be attributed to a much better fit of the hcp than of fcc stacking sequence to the four-fold symmetry of the Nb(001) surface

Laser physics and a review of laser applications in dentistry for children.

Science.gov (United States)

Martens, L C

2011-04-01

The aim of this introduction to this special laser issue is to describe some basic laser physics and to delineate the potential of laser-assisted dentistry in children. A brief review of the available laser literature was performed within the scope of paediatric dentistry. Attention was paid to soft tissue surgery, caries prevention and diagnosis, cavity preparation, comfort of the patient, effect on bacteria, long term pulpal vitality, endodontics in primary teeth, dental traumatology and low level laser therapy. Although there is a lack of sufficient evidence taking into account the highest standards for evidence-based dentistry, it is clear that laser application in a number of different aetiologies for soft tissue surgery in children has proven to be successful. Lasers provide a refined diagnosis of caries combined with the appropriate preventive adhesive dentistry after cavity preparation. This will further lead to a new wave of micro-dentistry based on 'filling without drilling'. It has become clear from a review of the literature that specific laser applications in paediatric dentistry have gained increasing importance. It can be concluded that children should be considered as amongst the first patients for receiving laser-assisted dentistry.

Femtosecond laser inscribed cladding waveguide lasers in Nd:LiYF4 crystals

Science.gov (United States)

Li, Shi-Ling; Huang, Ze-Ping; Ye, Yong-Kai; Wang, Hai-Long

2018-06-01

Depressed circular cladding, buried waveguides were fabricated in Nd:LiYF4 crystals with an ultrafast Yb-doped fiber master-oscillator power amplifier laser. Waveguides were optimized by varying the laser writing conditions, such as pulse energy, focus depth, femtosecond laser polarization and scanning velocity. Under optical pump at 799 nm, cladding waveguides showed continuous-wave laser oscillation at 1047 nm. Single- and multi-transverse modes waveguide laser were realized by varying the waveguide diameter. The maximum output power in the 40 μm waveguide is ∼195 mW with a slope efficiency of 34.3%. The waveguide lasers with hexagonal and cubic cladding geometry were also realized.

Advanced Laser Architecture for Two-Step Laser Tandem Mass Spectrometer

Science.gov (United States)

Fahey, Molly E.; Li, Steven X.; Yu, Anthony W.; Getty, Stephanie A.

2016-01-01

Future astrobiology missions will focus on planets with significant astrochemical or potential astrobiological features, such as small, primitive bodies and the icy moons of the outer planets that may host diverse organic compounds. These missions require advanced instrument techniques to fully and unambiguously characterize the composition of surface and dust materials. Laser desorptionionization mass spectrometry (LDMS) is an emerging instrument technology for in situ mass analysis of non-volatile sample composition. A recent Goddard LDMS advancement is the two-step laser tandem mass spectrometer (L2MS) instrument to address the need for future flight instrumentation to deconvolve complex organic signatures. The L2MS prototype uses a resonance enhanced multi-photon laser ionization mechanism to selectively detect aromatic species from a more complex sample. By neglecting the aliphatic and inorganic mineral signatures in the two-step mass spectrum, the L2MS approach can provide both mass assignments and clues to structural information for an in situ investigation of non-volatile sample composition. In this paper we will describe our development effort on a new laser architecture that is based on the previously flown Lunar Orbiter Laser Altimeter (LOLA) laser transmitter for the L2MS instrument. The laser provides two discrete midinfrared wavelengths (2.8 m and 3.4 m) using monolithic optical parametric oscillators and ultraviolet (UV) wavelength (266 nm) on a single laser bench with a straightforward development path toward flight readiness.

Laser in operative dentistry

Directory of Open Access Journals (Sweden)

E. Yasini

1994-06-01

Full Text Available Today laser has a lot of usage in medicine and dentistry. In the field of dentistry, laser is used in soft tissue surgery, sterilization of canals (in root canal therapy and in restorative dentistry laser is used for cavity preparation, caries removal, sealing the grooves (in preventive dentistry, etching enamel and dentin, composite polymerization and removal of tooth sensitivity. The use of Co2 lasers and Nd: YAG for cavity preparation, due to creating high heat causes darkness and cracks around the region of laser radiation. Also due to high temperature of these lasers, pulp damage is inevitable. So today, by using the Excimer laser especially the argon floride type with a wavelength of 193 nm, the problem of heat stress have been solved, but the use of lasers in dentistry, especially for cavity preparation needs more researches and evaluations.

Flexible Laser Metal Cutting

DEFF Research Database (Denmark)

Villumsen, Sigurd; Jørgensen, Steffen Nordahl; Kristiansen, Morten

2014-01-01

This paper describes a new flexible and fast approach to laser cutting called ROBOCUT. Combined with CAD/CAM technology, laser cutting of metal provides the flexibility to perform one-of-a-kind cutting and hereby realises mass production of customised products. Today’s laser cutting techniques...... possess, despite their wide use in industry, limitations regarding speed and geometry. Research trends point towards remote laser cutting techniques which can improve speed and geometrical freedom and hereby the competitiveness of laser cutting compared to fixed-tool-based cutting technology...... such as punching. This paper presents the concepts and preliminary test results of the ROBOCUT laser cutting technology, a technology which potentially can revolutionise laser cutting....

Measurement of the emission spectrum of a semiconductor laser using laser-feedback interferometry.

Science.gov (United States)

Keeley, James; Freeman, Joshua; Bertling, Karl; Lim, Yah L; Mohandas, Reshma A; Taimre, Thomas; Li, Lianhe H; Indjin, Dragan; Rakić, Aleksandar D; Linfield, Edmund H; Davies, A Giles; Dean, Paul

2017-08-03

The effects of optical feedback (OF) in lasers have been observed since the early days of laser development. While OF can result in undesirable and unpredictable operation in laser systems, it can also cause measurable perturbations to the operating parameters, which can be harnessed for metrological purposes. In this work we exploit this 'self-mixing' effect to infer the emission spectrum of a semiconductor laser using a laser-feedback interferometer, in which the terminal voltage of the laser is used to coherently sample the reinjected field. We demonstrate this approach using a terahertz frequency quantum cascade laser operating in both single- and multiple-longitudinal mode regimes, and are able to resolve spectral features not reliably resolved using traditional Fourier transform spectroscopy. We also investigate quantitatively the frequency perturbation of individual laser modes under OF, and find excellent agreement with predictions of the excess phase equation central to the theory of lasers under OF.

Lasers in chemical processing

International Nuclear Information System (INIS)

Davis, J.I.

1982-01-01

The high cost of laser energy is the crucial issue in any potential laser-processing application. It is expensive relative to other forms of energy and to most bulk chemicals. We show those factors that have previously frustrated attempts to find commercially viable laser-induced processes for the production of materials. Having identified the general criteria to be satisfied by an economically successful laser process and shown how these imply the laser-system requirements, we present a status report on the uranium laser isotope separation (LIS) program at the Lawrence Livermore National Laboratory

Laser power supply

International Nuclear Information System (INIS)

Bernstein, D.

1975-01-01

The laser power supply includes a regulator which has a high voltage control loop based on a linear approximation of a laser tube negative resistance characteristic. The regulator has independent control loops for laser current and power supply high voltage

Lasers in endodontics: an overview

Science.gov (United States)

Frentzen, Matthias; Braun, Andreas; Koort, Hans J.

2002-06-01

The interest in endodontic use of dental laser systems is increasing. Developing laser technology and a better understanding of laser effects widened the spectrum of possible endodontic indications. Various laser systems including excimer-, argon+-, diode-, Nd:YAG-, Er:YAG- and CO2-lasers are used in pulp diagnosis, treatment of hypersensitivity, pulp capping, sterilization of root canals, root canal shaping and obturation or apicoectomy. With the development of new delivery systems - thin and flexible fibers - for many different wavelengths laser applications in endodontics may increase. Since laser devices are still relatively costly, access to them is limited. Most of the clinical applications are laser assisted procedures such as the removing of pulp remnants and debris or disinfection of infected root canals. The essential question is whether a laser can provide improved treatment over conventional care. To perform laser therapy in endodontics today different laser types with adopted wavelengths and pulse widths are needed, each specific to a particular application. Looking into the future we will need endodontic laser equipment providing optimal laser parameters for different treatment modalities. Nevertheless, the quantity of research reports from the last decade promises a genuine future for lasers in endodontics.

Cutting using the CO laser. Trennen mit dem CO-Laser

Energy Technology Data Exchange (ETDEWEB)

Maisenhaelder, F.; Stoehr, M. (DLR, Inst. fuer Technische Physik, Stuttgart (Germany))

1991-02-01

Several cutting experiments were performed to investigate the maximum cutting speed when using CO or CO{sub 2} laser radiation. The material which was used for these experiments was mild steel (St 37) and stainless steel (V2A; X5CrNi 189), the material thickness varied from 0.5 mm to 4 mm. The cutting parameters, especially the focal power density and the focal diameter, were equal for both laser wavelengths. The experimental result shows an increased cutting speed with CO laser beams in comparison to CO{sub 2} laser beams.

Effect of natural homointerfaces on the magnetic properties of pseudomorphic La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin film: Phase separation vs split domain structure

Energy Technology Data Exchange (ETDEWEB)

Congiu, Francesco [Dipartimento di Fisica e CNISM, Università di Cagliari, S.P. Monserrato-Sestu, km 0.700, I 09042 Monserrato, Cagliari (Italy); Sanna, Carla [Sardegna Ricerche, Laboratorio Energetica Elettrica, VI Strada Ovest - Z.I.Macchiareddu, I 09010 Uta, Cagliari (Italy); Maritato, Luigi [CNR-SPIN, UOS Salerno, I 84084 Fisciano, Salerno (Italy); Dipartimento di Ingegneria dell’Informazione, Ingegneria Elettrica e Matematica Applicata, Università di Salerno, I 84084 Fisciano, Salerno (Italy); Orgiani, Pasquale [CNR-SPIN, UOS Salerno, I 84084 Fisciano, Salerno (Italy); Geddo Lehmann, Alessandra, E-mail: lehmann@dsf.unica.it [Dipartimento di Fisica e CNISM, Università di Cagliari, S.P. Monserrato-Sestu, km 0.700, I 09042 Monserrato, Cagliari (Italy)

2016-12-15

We studied the effect of naturally formed homointerfaces on the magnetic and electric transport behavior of a heavily twinned, 40 nm thick, pseudomorphic epitaxial film of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} deposited by molecular beam epitaxy on ferroelastic LaAlO{sub 3}(001) substrate. As proved by high resolution X-ray diffraction analysis, the lamellar twin structure of the substrate is imprinted in La{sub 0.7}Sr{sub 0.3}MnO{sub 3}. In spite of the pronounced thermomagnetic irreversibility in the DC low field magnetization, spin-glass-like character, possibly related to the structural complexity, was ruled out, on the base of AC susceptibility results. The magnetic characterization indicates anisotropic ferromagnetism, with a saturation magnetization M{sub s} = 3.2 μ{sub B}/Mn, slightly reduced with respect to the fully polarized value of 3.7 μ{sub B}/Mn. The low field DC magnetization vs temperature is non bulklike, with a two step increase in the field cooled M{sub FC}(T) branch and a two peak structure in the zero field cooled M{sub ZFC}(T) one. Correspondingly, two peaks are present in the resistivity vs temperature ρ(T) curve. With reference to the behavior of epitaxial manganites deposited on bicrystal substrates, results are discussed in terms of a two phase model, in which each couple of adjacent ferromagnetic twin cores, with bulklike T{sub C} = 370 K, is separated by a twin boundary with lower Curie point T{sub C} = 150 K, acting as barrier for spin polarized transport. The two phase scenario is compared with the alternative one based on a single ferromagnetic phase with the peculiar ferromagnetic domains structure inherent to twinned manganites films, reported to be split into interconnected and spatially separated regions with in-plane and out-of-plane magnetization, coinciding with twin cores and twin boundaries respectively.

Laser marking method and device

International Nuclear Information System (INIS)

Okazaki, Yuki; Aoki, Nobutada; Mukai, Narihiko; Sano, Yuji; Yamamoto, Seiji.

1997-01-01

An object is disposed in laser beam permeating liquid or gaseous medium. Laser beams such as CW laser or pulse laser oscillated from a laser device are emitted to the object to apply laser markings with less degradation of identification and excellent corrosion resistance on the surface of the object simply and easily. Upon applying the laser markings, a liquid or gas as a laser beam permeating medium is blown onto the surface of the object, or the liquid or gas in the vicinity of the object is sucked, the laser beam-irradiated portion on the surface can be cooled positively. Accordingly, the laser marking can be formed on the surface of the object with less heat affection to the object. In addition, if the content of a nitrogen gas in the laser beam permeating liquid medium is reduced by degassing to lower than a predetermined value, or the laser beam permeating gaseous medium is formed by an inert gas, a laser marking having high corrosion resistance and reliability can be formed on the surface of the objective member. (N.H.)

CO laser angioplasty system: efficacy of manipulatable laser angioscope catheter

Science.gov (United States)

Arai, Tsunenori; Kikuchi, Makoto; Mizuno, Kyoichi; Sakurada, Masami; Miyamoto, Akira; Arakawa, Koh; Kurita, Akira; Nakamura, Haruo; Takeuchi, Kiyoshi; Utsumi, Atsushi; Akai, Yoshiro

1992-08-01

A percutaneous transluminal coronary angioplasty system using a unique combination of CO laser (5 micrometers ) and As-S infrared glass fiber under the guidance of a manipulatable laser angioscope catheter is described. The ablation and guidance functions of this system are evaluated. The angioplasty treatment procedure under angioscope guidance was studied by in vitro model experiment and in vivo animal experiment. The whole angioplasty system is newly developed. That is, a transportable compact medical CO laser device which can emit up to 10 W, a 5 F manipulatable laser angioscope catheter, a thin CO laser cable of which the diameter is 0.6 mm, an angioscope imaging system for laser ablation guidance, and a system controller were developed. Anesthetized adult mongrel dogs (n equals 5) with an artificial complete occlusion in the femoral artery and an artificial human vessel model including occluded or stenotic coronary artery were used. The manipulatability of the catheter was drastically improved (both rotation and bending), therefore, precise control of ablation to expand stenosis was obtained. A 90% artificial stenosis made of human yellow plaque in 4.0 mm diameter in the vessel was expanded to 70% stenosis by repetitive CO laser ablations of which total energy was 220 J. All procedures were performed and controlled under angioscope visualization.

Laser welding engineering

International Nuclear Information System (INIS)

Bhieh, N. M.; El Eesawi, M. E.; Hashkel, A. E.

2007-01-01

Laser welding was in its early life used mainly for unusual applications where no other welding process would be suitable that was twenty five years ago. Today, laser welding is a fully developed part of the metal working industry, routinely producing welds for common items such as cigarette lighters, which springs, motor/transformer lamination, hermetic seals, battery and pacemaker cans and hybrid circuit packages. Yet very few manufacturing engineering have seriously considers employing lasers in their own operations. Why? There are many reasons, but a main one must be not acquainted with the operation and capabilities of a laser system. Other reasons, such as a relatively high initial cost and a concern about using lasers in the manufacturing environment, also are frequently cited, and the complexity of the component and flexibility of the light delivery system. Laser welding could be used in place of many different standard processes, such as resistance (spot or seam), submerged arc, RF induction, high-frequency resistance, ultrasonic and electronic and electron-beam. while each of these techniques has established an independent function in the manufacturing world, the flexible laser welding approach will operate efficiently and economically in many different applications. Its flexibility will even permit the welding system to be used for other machining function, such as drilling, scribing, sealing and serializing. In this article, we will look at how laser welding works and what benefits it can offer to manufacturing engineers. Some industry observers state that there are already 2,000 laser machine tools being used for cutting, welding and drilling and that the number could reach 30,000 over the next 15 years as manufacturing engineers become more aware of the capabilities of lasers [1). While most laser applications are dedicated to one product or process that involves high-volume, long-run manufacturing, the flexibility of a laser to supply energy to hard

Teradiode's high brightness semiconductor lasers

Science.gov (United States)

Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

2016-03-01

TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

Color speckle in laser displays

Science.gov (United States)

Kuroda, Kazuo

2015-07-01

At the beginning of this century, lighting technology has been shifted from discharge lamps, fluorescent lamps and electric bulbs to solid-state lighting. Current solid-state lighting is based on the light emitting diodes (LED) technology, but the laser lighting technology is developing rapidly, such as, laser cinema projectors, laser TVs, laser head-up displays, laser head mounted displays, and laser headlamps for motor vehicles. One of the main issues of laser displays is the reduction of speckle noise1). For the monochromatic laser light, speckle is random interference pattern on the image plane (retina for human observer). For laser displays, RGB (red-green-blue) lasers form speckle patterns independently, which results in random distribution of chromaticity, called color speckle2).

Recent laser experiments on the Aurora KrF/ICF laser system

International Nuclear Information System (INIS)

Turner, T.P.; Jones, J.E.; Czuchlewski, S.J.; Watt, R.G.; Thomas, S.J.; Kang, M.; Tallman, C.R.; Mack, J.M.; Figueira, J.F.

1990-01-01

The Aurora KrF/ICF Laser Facility at Los Alamos is operational at the kilojoule-level for both laser and target experiments. We report on recent laser experiments on the system and resulting system improvements. 3 refs., 4 figs

Laser for fusion energy

International Nuclear Information System (INIS)

Holzrichter, J.F.

1995-01-01

Solid state lasers have proven to be very versatile tools for the study and demonstration of inertial confinement fusion principles. When lasers were first contemplated to be used for the compression of fusion fuel in the late 1950s, the laser output energy levels were nominally one joule and the power levels were 10 3 watts (pulse duration's of 10 -3 sec). During the last 25 years, lasers optimized for fusion research have been increased in power to typically 100,000 joules with power levels approaching 10 14 watts. As a result of experiments with such lasers at many locations, DT target performance has been shown to be consistent with high gain target output. However, the demonstration of ignition and gain requires laser energies of several megajoules. Laser technology improvements demonstrated over the past decade appear to make possible the construction of such multimegajoule lasers at affordable costs. (author)

Laser Processing and Chemistry

CERN Document Server

Bäuerle, Dieter

2011-01-01

This book gives an overview of the fundamentals and applications of laser-matter interactions, in particular with regard to laser material processing. Special attention is given to laser-induced physical and chemical processes at gas-solid, liquid-solid, and solid-solid interfaces. Starting with the background physics, the book proceeds to examine applications of lasers in “standard” laser machining and laser chemical processing (LCP), including the patterning, coating, and modification of material surfaces. This fourth edition has been enlarged to cover the rapid advances in the understanding of the dynamics of materials under the action of ultrashort laser pulses, and to include a number of new topics, in particular the increasing importance of lasers in various different fields of surface functionalizations and nanotechnology. In two additional chapters, recent developments in biotechnology, medicine, art conservation and restoration are summarized. Graduate students, physicists, chemists, engineers, a...

Laser applications for energy. Fifty years since advent of laser and next thirty years

International Nuclear Information System (INIS)

Nakai, Sadao

2011-01-01

The utilization of light has been changed since the advent of lasers about fifty years ago. Now in the twenty first century, laser science is being applied in every industry as the fundamental technology. In the recent years, remarkable progresses have been made in the semiconductor lasers of high power and wide wavelength region. The amazing developments of ceramics laser materials like YAG and nonlinear optics materials of organic crystals have been achieved as well as the big progress in the fiber lasers. It is also to be pointed out that very high power ultra short laser pulses have become available. In the field of power photonics, which is based on the power semiconductor lasers, fiber lasers and new laser materials, various industrial applications are expected to be constructed further in civil engineering, manufacturing technology, agricultural and biological applications, medical utilization and space sciences. It is expected, by the development of ultra short pulse and ultra high mean power lasers, that particle accelerations, ultra high density sciences, nuclear fusion neutron sources and laser fusion power reactors are to be advanced drastically. Recent development and future prospects of high power lasers are illustrated. Lasers are now regarded as one of the key technologies in line with the national policy toward the creation of innovative industries. Realization of the laser fusion reactor is the most challenging target in the coming thirty years. (S. Funahashi)

Disk laser: a new generation of industrial lasers

Science.gov (United States)

Brockmann, Rüdiger; Havrilla, David

2009-02-01

The disk laser concept aggregates high efficiency, excellent beam quality, high average and peak power with moderate cost and high reliability. Therefore it became one major technology in industrial laser material processing. In several large scale installations in the automotive industry, high power cw- systems make already use of the high brightness and high efficiency of disk lasers, e.g. in remote welding [1,2]. Other applications including cutting, drilling, deep welding and hybrid welding are arising. This report highlights the latest results in cw disk laser development. A 1.5 kW source with a beam parameter product (BPP) of 2 mm mrad is described as well as the demonstration of a 14 kW system out of three disks with a BPP of 8 mm mrad. The future prospects regarding increased power and even further improved productivity and economics are presented. A new industrial disk laser series with output powers up to 16 kW and a beam parameter product of 8 mm*mrad will enable both, new applications in the thick sheet area and very cost efficient high productive applications like welding and cutting of thin sheets.

Laser development for laser fusion applications. Research progress report, October 1979-September 1980

International Nuclear Information System (INIS)

1981-04-01

Research conducted during this period is reported on the following: (1) rare-gas-halogen lasers, (2) XeCl laser at excitation rates of 1.7 to 4.7 MW/cm 3 , (3) rare gas halogen laser modeling, (4) three-body ion recombination coefficients, (5) electron beam accelerators, (6) power conditioning studies for accelerators, (7) chemically pumped iodine lasers, (8) hydrogen fluoride lasers, and (9) supporting research

A low-cost, tunable laser lock without laser frequency modulation

Science.gov (United States)

Shea, Margaret E.; Baker, Paul M.; Gauthier, Daniel J.

2015-05-01

Many experiments in optical physics require laser frequency stabilization. This can be achieved by locking to an atomic reference using saturated absorption spectroscopy. Often, the laser frequency is modulated and phase sensitive detection used. This method, while well-proven and robust, relies on expensive components, can introduce an undesirable frequency modulation into the laser, and is not easily frequency tuned. Here, we report a simple locking scheme similar to those implemented previously. We modulate the atomic resonances in a saturated absorption setup with an AC magnetic field created by a single solenoid. The same coil applies a DC field that allows tuning of the lock point. We use an auto-balanced detector to make our scheme more robust against laser power fluctuations and stray magnetic fields. The coil, its driver, and the detector are home-built with simple, cheap components. Our technique is low-cost, simple to setup, tunable, introduces no laser frequency modulation, and only requires one laser. We gratefully acknowledge the financial support of the NSF through Grant # PHY-1206040.

CO2 laser pulse shortening by laser ablation of a metal target

International Nuclear Information System (INIS)

Donnelly, T.; Mazoyer, M.; Lynch, A.; O'Sullivan, G.; O'Reilly, F.; Dunne, P.; Cummins, T.

2012-01-01

A repeatable and flexible technique for pulse shortening of laser pulses has been applied to transversely excited atmospheric (TEA) CO 2 laser pulses. The technique involves focusing the laser output onto a highly reflective metal target so that plasma is formed, which then operates as a shutter due to strong laser absorption and scattering. Precise control of the focused laser intensity allows for timing of the shutter so that different temporal portions of the pulse can be reflected from the target surface before plasma formation occurs. This type of shutter enables one to reduce the pulse duration down to ∼2 ns and to remove the low power, long duration tails that are present in TEA CO 2 pulses. The transmitted energy is reduced as the pulse duration is decreased but the reflected power is ∼10 MW for all pulse durations. A simple laser heating model verifies that the pulse shortening depends directly on the plasma formation time, which in turn is dependent on the applied laser intensity. It is envisaged that this plasma shutter will be used as a tool for pulse shaping in the search for laser pulse conditions to optimize conversion efficiency from laser energy to useable extreme ultraviolet (EUV) radiation for EUV source development.

Laser safety tools and training

CERN Document Server

Barat, Ken

2008-01-01

Lasers perform many unique functions in a plethora of applications, but there are many inherent risks with this continually burgeoning technology. Laser Safety: Tools and Training presents simple, effective ways for users in a variety of facilities to evaluate the hazards of any laser procedure and ensure they are following documented laser safety standards.Designed for use as either a stand-alone volume or a supplement to Laser Safety Management, this text includes fundamental laser and laser safety information and critical laser use information rarely found in a single source. The first lase

Injection-controlled laser resonator

Science.gov (United States)

Chang, J.J.

1995-07-18

A new injection-controlled laser resonator incorporates self-filtering and self-imaging characteristics with an efficient injection scheme. A low-divergence laser signal is injected into the resonator, which enables the injection signal to be converted to the desired resonator modes before the main laser pulse starts. This injection technique and resonator design enable the laser cavity to improve the quality of the injection signal through self-filtering before the main laser pulse starts. The self-imaging property of the present resonator reduces the cavity induced diffraction effects and, in turn, improves the laser beam quality. 5 figs.

High power laser research and development at the Laboratory for Laser Energetics

International Nuclear Information System (INIS)

Soures, J.M.; McCrory, R.L.; Cerqua, K.A.

1986-01-01

As part of its research mission - to investigate the interaction of intense radiation with matter - the Laboratory for Laser Energetics (LLE) of the University of Rochester is developing a number of high-peak power and high-average-power laser systems. In this paper we highlight some of the LLE work on solid-state laser research, development and applications. Specifically, we discuss the performance and operating characteristics of Omega, a twenty-four beam, 4000 Joule, Nd:glass laser system which is frequently tripled using the polarization mismatch scheme. We also discuss progress in efforts to develop high-average-power solid-state laser systems with active-mirror and slab geometries and to implement liquid-crystal devices in high-power Nd:glass lasers. Finally we present results from a program to develop a compact, ultrahigh-peak-power solid-state laser using the concept of frequency chirped pulse amplification

Verification of a characterization method of the laser-induced selective activation based on industrial lasers

DEFF Research Database (Denmark)

Zhang, Yang; Hansen, Hans Nørgaard; Tang, Peter T.

2013-01-01

In this article, laser-induced selective activation (LISA) for subsequent autocatalytic copper plating is performed by several types of industrial scale lasers, including a Nd:YAG laser, a UV laser, a fiber laser, a green laser, and a short pulsed laser. Based on analysis of all the laser......-machined surfaces, normalized bearing area curves and parameters are used to characterize the surface quantitatively. The range of normalized bearing area curve parameters for plate-able surface is suggested. PBT/PET with 40 % glass fiber was used as the substrate material. For all of the studied lasers......, the parameters were varied in a relatively large range, and matrixes of the laser-machined surface were obtained. The topography of those laser-machined surfaces was examined by scanning electronic microscope (SEM). For each sample examined by SEM, there was an identical workpiece plated by for 90 min...

A III-V nanowire channel on silicon for high-performance vertical transistors.

Science.gov (United States)

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

Dependence of Parameters of Laser-Produced Au Plasmas on the Incident Laser Energy of Sub-Nanosecond and Picosecond Laser Pulses

International Nuclear Information System (INIS)

Woryna, E.; Badziak, J.; Makowski, J.; Parys, P.; Vankov, A.B.; Wolowski, J.; Krasa, J.; Laska, L.; Rohlena, K.

2001-01-01

The parameters of Au plasma as functions of laser energy for ps pulses are presented and compared with the ones for sub-ns pulses at nearly the same densities of laser energy. The experiments were performed at the IPPLM with the use of CPA (chirped pulse amplification) Nd:glass laser system. Thick Au foil targets were irradiated by normally incident focused laser beams with maximum intensities of 8x10 16 and 2x10 14 W/cm 2 for ps and sub-ns laser pulses, respectively. The characteristics of ion streams were investigated with the use of ion diagnostics methods based on the time-of flight technique. In these experiments the laser energies were changed in the range from 90 to 700 mJ and the measurements were performed at a given focus position FP = 0 and along the target normal for both the laser pulses. The charge carried by the ions, the maximum ion velocities of fast and thermal ion groups, the maximum ion current density as well as the area of photopeak in dependence on the incident laser energy for sub-ns and ps pulses were investigated and discussed. (author)

Stabilisation of late transition metal and noble metal films in hexagonal and body centred tetragonal phases by epitaxial growth

Energy Technology Data Exchange (ETDEWEB)

Hueger, E.

2005-08-26

In this work ultrathin metallic films with a crystal phase different to their natural bulk structure were produced by hetero-epitaxial growth on metallic substrates. A further aim of this work was to understand the initiation, growth and stability of crystal phase modifications of these films. there exist cases where the films turn beyond the pseudomorphic-growth to a crystal phase different from their natural bulk structure. The present work presents and discusses such a case in addition to the general phenomenon of pseudomorphic-growth. In particular it is shown that metals whose natural phase is face centred cubic (fcc) can be grown in body centred tetragonal (bct) or hexagonal close packed (hcp) phases in the form of thin films on (001) surfaces of appropriate substrates. The growth behavior, electron diffraction analysis, appearance conditions, geometric fit considerations, examples and a discussion of the phase stability of non-covered films and superlattices is given reviewing all epitaxial-systems whose diffraction pattern can be explained by the hexagonal or pseudomorphic bct phase. (orig.)

Active-passively mode-locked dye laser for diagnosis of laser-produced plasmas

International Nuclear Information System (INIS)

Teng, Y.L.; Fedosejevs, R.; Sigel, R.

1981-03-01

In this report an active-passively mode-locked, flashlamp-pumped dye laser for diagnosis of laser-produced plasmas is described. This dye laser system used as a pulsed light source for high-speed photography of laser-target experiments was synchronized to the ASTERIX III iodine laser pulse with better than 100 ps accuracy. The single pulse energy was 10 μJ, pulse duration less than 10 ps. In 111 shots clear shadowgrams were obtained during a total of 151 target shots, i.e. the system worked well in 74% of the shots. (orig.)

Solar pumped laser

Science.gov (United States)

Lee, J. H.; Hohl, F.; Weaver, W. R. (Inventor)

1984-01-01

A solar pumped laser is described in which the lasant is a gas that will photodissociate and lase when subjected to sunrays. Sunrays are collected and directed onto the gas lasant to cause it to lase. Applications to laser propulsion and laser power transmission are discussed.

Diode lasers optimized in brightness for fiber laser pumping

Science.gov (United States)

Kelemen, M.; Gilly, J.; Friedmann, P.; Hilzensauer, S.; Ogrodowski, L.; Kissel, H.; Biesenbach, J.

2018-02-01

In diode laser applications for fiber laser pumping and fiber-coupled direct diode laser systems high brightness becomes essential in the last years. Fiber coupled modules benefit from continuous improvements of high-power diode lasers on chip level regarding output power, efficiency and beam characteristics resulting in record highbrightness values and increased pump power. To gain high brightness not only output power must be increased, but also near field widths and far field angles have to be below a certain value for higher power levels because brightness is proportional to output power divided by beam quality. While fast axis far fields typically show a current independent behaviour, for broadarea lasers far-fields in the slow axis suffer from a strong current and temperature dependence, limiting the brightness and therefore their use in fibre coupled modules. These limitations can be overcome by carefully optimizing chip temperature, thermal lensing and lateral mode structure by epitaxial and lateral resonator designs and processing. We present our latest results for InGaAs/AlGaAs broad-area single emitters with resonator lengths of 4mm emitting at 976nm and illustrate the improvements in beam quality over the last years. By optimizing the diode laser design a record value of the brightness for broad-area lasers with 4mm resonator length of 126 MW/cm2sr has been demonstrated with a maximum wall-plug efficiency of more than 70%. From these design also pump modules based on 9 mini-bars consisting of 5 emitters each have been realized with 360W pump power.

Longitudinally excited CO2 laser with multiple laser tubes

Science.gov (United States)

Uno, Kazuyuki; Akitsu, Tetsuya; Jitsuno, Takahisa

2016-11-01

We developed a longitudinally excited CO2 laser system that was constituted of two or three laser tubes and a single driving circuit. The multiple laser tubes simultaneously produced almost the same short laser pulses with a spike pulse width of about 164 ns and a pulse tail length of about 74 μs with a single driving circuit. The double-tube system was constituted of two 30 cm-long laser tubes with inner diameters of 13 mm and 16 mm and a single driving circuit with an input energy of 2.18 J. The output energy of the 13 mm-tube was 23.3 mJ, and that of the 16 mm-tube was 21.9 mJ at a gas pressure of 4.2 kPa (CO2:N2:He = 1:1:2). The triple-tube system was constituted of three 30 cm-long laser tubes with inner diameters of 9 mm, 13 mm, and 16 mm and a single driving circuit with an input energy of 2.18 J. The output energy of the 9 mm tube was 15.9 mJ, that of the 13 mm tube was 24.1 mJ, and that of the 16 mm tube was 19.2 mJ at a gas pressure of 4.2 kPa. With the same driving circuit and the same input energy, the total output energies of the multitube laser systems were higher than the output energy of a single-tube system.

Technology of discharge and laser resonators for high power CO2 lasers. Koshutsuryoku CO2 laser ni tsukawareru hoden reiki laser kyoshinki gijutsu

Energy Technology Data Exchange (ETDEWEB)

Takenaka, Y.; Kuzumoto, M. (Mitsubishi Electric Corp., Tokyo (Japan))

1994-03-20

This paper describes discharge excitation technology and resonator technology as basic technologies for high power CO2 lasers. As a result of progress in high-frequency power element techniques, the discharge excitation technology now generally uses laser excitation using AC discharge of capacity coupling type. Its representative example is silent discharge (SD) excitation. This is a system to excite laser by applying high voltages with as high frequency as 100 kHz to 1 MHz across a pair of electrodes covered with a dielectric material. The system maintains stability in discharge even if power supply voltage amplitude is modulated, and easily provides pulse outputs. Discharge excitation for diffusion cooled type CO2 laser generates a discharge in a gap with a gap length of about 2 mm, and can perform gas cooling by means of thermal conduction of gas, whereas a compact resonator can be fabricated. A resonator for the diffusion cooled type CO2 laser eliminates gas circulation and cooling systems, hence the device can be made more compact. A report has been given that several of these compact resonators were combined, from which a laser output of 85W was obtained by using RF discharge of 2kW. 43 refs., 21 figs.

Nuclear-pumped lasers

CERN Document Server

Prelas, Mark

2016-01-01

This book focuses on Nuclear-Pumped Laser (NPL) technology and provides the reader with a fundamental understanding of NPLs, a review of research in the field, and exploration of large scale NPL system design and applications. Early chapters look at the fundamental properties of lasers, nuclear-pumping and nuclear reactions that may be used as drivers for nuclear-pumped lasers. The book goes on to explore the efficient transport of energy from the ionizing radiation to the laser medium and then the operational characteristics of existing nuclear-pumped lasers. Models based on Mathematica, explanations and a tutorial all assist the reader’s understanding of this technology. Later chapters consider the integration of the various systems involved in NPLs and the ways in which they can be used, including beyond the military agenda. As readers will discover, there are significant humanitarian applications for high energy/power lasers, such as deflecting asteroids, space propulsion, power transmission and mining....

Atomic iodine laser

International Nuclear Information System (INIS)

Fisk, G.A.; Gusinow, M.A.; Hays, A.K.; Padrick, T.D.; Palmer, R.E.; Rice, J.K.; Truby, F.K.; Riley, M.E.

1978-05-01

The atomic iodine photodissociation laser has been under intensive study for a number of years. The physics associated with this system is now well understood and it is possible to produce a 0.1 nsec (or longer) near-diffraction-limited laser pulse which can be amplified with negligible temporal distortion and little spatial deformation. The output of either a saturated or unsaturated amplifier consists of a high-fidelity near-diffraction-limited, energetic laser pulse. The report is divided into three chapters. Chapter 1 is a survey of the important areas affecting efficient laser operation and summarizes the findings of Chap. 2. Chapter 2 presents detailed discussions and evaluations pertinent to pumps, chemical regeneration, and other elements in the overall laser system. Chapter 3 briefly discusses those areas that require further work and the nature of the work required to complete the full-scale evaluation of the applicability of the iodine photodissociation laser to the inertial confinement program

Principles of Lasers

CERN Document Server

Svelto, Orazio

2010-01-01

This new Fifth Edition of Principles of Lasers incorporates corrections to the previous edition. The text’s essential mission remains the same: to provide a wide-ranging yet unified description of laser behavior, physics, technology, and current applications. Dr. Svelto emphasizes the physical rather than the mathematical aspects of lasers, and presents the subject in the simplest terms compatible with a correct physical understanding. Praise for earlier editions: "Professor Svelto is himself a longtime laser pioneer and his text shows the breadth of his broad acquaintance with all aspects of the field … Anyone mastering the contents of this book will be well prepared to understand advanced treatises and research papers in laser science and technology." (Arthur L. Schawlow, 1981 Nobel Laureate in Physics) "Already well established as a self-contained introduction to the physics and technology of lasers … Professor Svelto’s book, in this lucid translation by David Hanna, can be strongly recommended for...

Improvements of the ruby laser oscillator system for laser scattering

International Nuclear Information System (INIS)

Yamauchi, Toshihiko; Kumagai, Katsuaki; Kawakami, Tomohide; Matoba, Tohru; Funahashi, Akimasa

1978-10-01

A ruby laser oscillator system is used to measure electron temperatures of the Tokamak plasmas(JFT-2 and JFT-2a). Improvements have been made of the laser oscillator to obtain the correct values. Described are the improvements and the damages of a ruby rod and a KD*P crystal for Q-switching by laser beam. Improvement are the linear Xe lamp replaced by a helical Xe lamp and in the electrical circuit for Q-switching. The damage of an optical component by a laser beam should be clarified from the damage data; the cause is not found yet. (author)

Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

Laser-induced stresses versus mechanical stress power measurements during laser ablation of solids

International Nuclear Information System (INIS)

Shannon, M.A.; Russo, R.E.

1995-01-01

Laser-induced stresses resulting from high-power laser-material interactions have been studied extensively. However, the rate of change in mechanical energy, or stress power, due to laser-induced stresses has only recently been investigated. An unanswered question for monitoring laser-material interactions in the far-field is whether stress power differs from stresses measured, particularly with respect to laser-energy coupling to a solid target. This letter shows experimental acoustic data which demonstrate that stress power measured in the far field of the target shows changes in laser-energy coupling, whereas the stresses measured do not. For the ambient medium above the target, stress power and stress together reflect changes in laser-energy coupling. copyright 1995 American Institute of Physics

Determinants of holmium:yttrium-aluminum-garnet laser time and energy during ureteroscopic laser lithotripsy.

Science.gov (United States)

Molina, Wilson R; Marchini, Giovanni S; Pompeo, Alexandre; Sehrt, David; Kim, Fernando J; Monga, Manoj

2014-04-01

To evaluate the association of preoperative noncontrast computed tomography stone characteristics, laser settings, and stone composition with cumulative holmium:yttrium-aluminum-garnet (Ho:YAG) laser time/energy. We retrospectively reviewed patients who underwent semirigid/flexible ureteroscopy and Ho:YAG laser lithotripsy (200 or 365 μm laser fiber; 0.8-1.0 J energy; and 8-10 Hz rate) at 2 tertiary care centers (April 2010-May 2012). Studied parameters were as follows: patient's characteristics; stone characteristics (location, burden, hardness, and composition); total laser time and energy; and surgical outcomes. One hundred patients met our inclusion criteria. Mean stone size was 1.01 ± 0.42 cm and volume 0.33 ± 0.04 cm(3). Mean stone radiodensity was 990 ± 296 HU, and Hounsfield units density 13.8 ± 6.0 HU/mm. All patients were considered stone free. Stone size and volume had a significant positive correlation with laser energy (R = 0.516, P R = 0.621, P R = 0.477, P R = 0.567, P stone size, only the correlation between HU and laser time was significant (R = 0.262, P = .011). In the multivariate analysis, with exception of stone composition (P = .103), all parameters significantly increased laser energy (R(2) = 0.524). Multivariate analysis revealed a positive significant association of laser time with stone volume (P R(2) = 0.512). In multivariate analysis for laser energy, only calcium phosphate stones required less energy to fragment compared with uric acid stones. No significant differences were found in the multivariate laser time model. Ho:YAG laser cumulative energy and total time are significantly affected by stone dimensions, hardness location, fiber size, and power. Kidney location, laser fiber size, and laser power have more influence on the final laser energy than on the total laser time. Calcium phosphate stones require less laser energy to fragment. Copyright © 2014 Elsevier Inc. All rights reserved.

Lasers: principles, applications and energetic measures

International Nuclear Information System (INIS)

Subran, C.; Sagaut, J.; Lapointe, S.

2009-01-01

After having recalled the principles of a laser and the properties of the laser beam, the authors describe the following different types of lasers: solid state lasers, fiber lasers, semiconductor lasers, dye lasers and gas lasers. Then, their applications are given. Very high energy lasers can reproduce the phenomenon of nuclear fusion of hydrogen atoms. (O.M.)

Laser performance upgrade for precise ICF experiment in SG-Ⅲ laser facility

Directory of Open Access Journals (Sweden)

Wanguo Zheng

2017-09-01

Full Text Available The SG-Ⅲ laser facility (SG-Ⅲ is the largest laser driver for inertial confinement fusion (ICF researches in China, which has 48 beamlines and can deliver 180 kJ ultraviolet laser energy in 3 ns. In order to meet the requirements of precise physics experiments, some new functionalities need to be added to SG-Ⅲ and some intrinsic laser performances need upgrade. So at the end of SG-Ⅲ's engineering construction, the 2-year laser performance upgrade project started. This paper will introduce the newly added functionalities and the latest laser performance of SG-Ⅲ. With these function extensions and performance upgrade, SG-Ⅲ is now fully prepared for precise ICF experiments and solidly paves the way towards fusion ignition.

Continuum modelling of silicon diffusion in indium gallium arsenide

Science.gov (United States)

Aldridge, Henry Lee, Jr.

A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V semiconductors as alternative channel materials for logic devices. Indium Gallium Arsenide (InGaAs) is such a material from the III-V semiconductor family, which exhibit superior electron mobilities and injection velocities than that of silicon. In order for InGaAs integration to be realized, contact resistances must be minimized through maximizing activation of dopants in this material. Additionally, redistribution of dopants during processing must be clearly understood and ultimately controlled at the nanometer-scale. In this work, the activation and diffusion behavior of silicon, a prominent n-type dopant in InGaAs, has been characterized and subsequently modelled using the Florida Object Oriented Process and Device Simulator (FLOOPS). In contrast to previous reports, silicon exhibits non-negligible diffusion in InGaAs, even for smaller thermal budget rapid thermal anneals (RTAs). Its diffusion is heavily concentration-dependent, with broadening "shoulder-like" profiles when doping levels exceed 1-3x1019cm -3, for both ion-implanted and Molecular Beam Epitaxy (MBE)-grown cases. Likewise a max net-activation value of ˜1.7x1019cm -3 is consistently reached with enough thermal processing, regardless of doping method. In line with experimental results and several ab-initio calculation results, rapid concentration-dependent diffusion of Si in InGaAs and the upper limits of its activation is believed to be governed by cation vacancies that serve as compensating defects in heavily n-type regions of InGaAs. These results are ultimately in line with an amphoteric defect model, where the activation limits of dopants are an intrinsic limitation of the material, rather than governed by individual dopant species or their methods of incorporation. As a result a Fermi level dependent point

Stabilizing laser energy density on a target during pulsed laser deposition of thin films

Science.gov (United States)

Dowden, Paul C.; Jia, Quanxi

2016-05-31

A process for stabilizing laser energy density on a target surface during pulsed laser deposition of thin films controls the focused laser spot on the target. The process involves imaging an image-aperture positioned in the beamline. This eliminates changes in the beam dimensions of the laser. A continuously variable attenuator located in between the output of the laser and the imaged image-aperture adjusts the energy to a desired level by running the laser in a "constant voltage" mode. The process provides reproducibility and controllability for deposition of electronic thin films by pulsed laser deposition.

Laser transmitter system

International Nuclear Information System (INIS)

Dye, R.A.

1975-01-01

A laser transmitter system is disclosed which utilizes mechanical energy for generating an output pulse. The laser system includes a current developing device such as a piezoelectric crystal which charges a storage device such as a capacitor in response to a mechanical input signal. The capacitor is coupled to a switching device, such as a silicon controlled rectifier (SCR). The switching device is coupled to a laser transmitter such as a GaAs laser diode, which provides an output signal in response to the capacitor being discharged

Regenerative similariton laser

Directory of Open Access Journals (Sweden)

Thibault North

2016-05-01

Full Text Available Self-pulsating lasers based on cascaded reshaping and reamplification (2R are capable of initiating ultrashort pulses despite the accumulation of large amounts of nonlinearities in all-fiber resonators. The spectral properties of pulses in self-similar propagation are compatible with cascaded 2R regeneration by offset filtering, making parabolic pulses suitable for the design of a laser of this recently introduced class. A new type of regenerative laser giving birth to similaritons is numerically investigated and shows that this laser is the analog of regenerative sources based solely on self-phase modulation and offset filtering. The regenerative similariton laser does not suffer from instabilities due to excessive nonlinearities and enables ultrashort pulse generation in a simple cavity configuration.

1.8kW laser diode pumped YAG laser; Shutsuryoku 1.8kW no handotai laser reiki YAG laser

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

Toshiba Corporation, as a participant in Ministry of International Trade and Industry`s `photon measurement and processing technology project` since August, 1997, is engaged in the development of an energy-efficient LD (laser diode) pumped semiconductor YAG (yttrium-aluminum-garnet) laser device to be used for welding and cutting. It is a 5-year project and the goal is a mean output of 10kW and efficiency of 20%. In this article, a simulation program is developed which carries out calculation about element technology items such as the tracking of the beam from the pumping LD and the excitation distribution, temperature distribution, thermal stress distribution, etc., in the YAG rod. An oscillator is constructed, based on the results of the simulation, and it exhibits a world-high class continuous laser performance of a 1.8kW output and 13% efficiency. The record of 13% efficiency is five times higher than that achieved by the conventional lamp-driven YAG laser device. (translated by NEDO)

High temperature semiconductor diode laser pumps for high energy laser applications

Science.gov (United States)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

Laser Plasma Instability Experiments with KrF Lasers

National Research Council Canada - National Science Library

Weaver, J. L; Oh, J; Afeyan, B; Phillips, L; Seely, J; Feldman, U; Brown, C; Karasik, , M; Serlin, V; Aglitskiy, Y; Mostovych, A. N

2007-01-01

...) with a rep-rate system that has a per pulse laser energy well below 1 megajoule. Measurements of LPI using the Nike KrF laser are presented at and above intensities needed for the FTF (Ĩ2x1015 W/cm2...

Laser cladding with powder

NARCIS (Netherlands)

Schneider, M.F.; Schneider, Marcel Fredrik

1998-01-01

This thesis is directed to laser cladding with powder and a CO2 laser as heat source. The laser beam intensity profile turned out to be an important pa6 Summary rameter in laser cladding. A numerical model was developed that allows the prediction of the surface temperature distribution that is

Visible Solid State Lasers

NARCIS (Netherlands)

Hikmet, R.A.M.

2007-01-01

Diode lasers can be found in various applications most notably in optical communication and optical storage. Visible lasers were until recently were all based on IR diode lasers. Using GaN, directly blue and violet emitting lasers have also been introduced to the market mainly in the area of optical

Development of laser technology in Research Center of Laser Fusion

International Nuclear Information System (INIS)

Zheng Wanguo; Deng Ying; Zhou Wei

2013-01-01

This paper reviews the progress in the construction of SG-Ⅲ laser facility, integrated Testbed and XG-Ⅲ laser facility and that in the upgrade of the prototype of SG-Ⅲ, and the development in assembling and installing technology, and the achievements in maintaining cleanliness project and metrology in Laser Fusion Research Center, China Academy of Engineering Physics in China in 2012. (authors)

Laser systems configured to output a spectrally-consolidated laser beam and related methods

Science.gov (United States)

Koplow, Jeffrey P [San Ramon, CA

2012-01-10

A laser apparatus includes a plurality of pumps each of which is configured to emit a corresponding pump laser beam having a unique peak wavelength. The laser apparatus includes a spectral beam combiner configured to combine the corresponding pump laser beams into a substantially spatially-coherent pump laser beam having a pump spectrum that includes the unique peak wavelengths, and first and second selectively reflective elements spaced from each other to define a lasing cavity including a lasing medium therein. The lasing medium generates a plurality of gain spectra responsive to absorbing the pump laser beam. Each gain spectrum corresponds to a respective one of the unique peak wavelengths of the substantially spatially-coherent pump laser beam and partially overlaps with all other ones of the gain spectra. The reflective elements are configured to promote emission of a laser beam from the lasing medium with a peak wavelength common to each gain spectrum.

Laser ablation of UHMWPE-polyethylene by 438 nm high energy pulsed laser

Energy Technology Data Exchange (ETDEWEB)

Torrisi, L.; Gammino, S.; Mezzasalma, A.M.; Visco, A.M.; Badziak, J.; Parys, P.; Wolowski, J.; Woryna, E.; Krasa, J.; Laska, L.; Pfeifer, M.; Rohlena, K.; Boody, F.P

2004-04-15

Pulsed laser ablation of ultra-high-molecular-weight-polyethylene (UHMWPE) is investigated at Prague Asterix Laser System (PALS) Laboratory. The high ablation yield as a function of laser energy is presented at 438 nm laser wavelength. The mechanisms of the polymer ablation are studied on the base of ''in situ'' analysis, such as mass quadrupole spectrometry and time-of-flight measurements, and ''ex situ'' analysis, such as SEM investigations and Raman spectroscopy. Results show that the laser irradiation induces a strong polymer dehydrogenation and molecular emission due to different C{sub x}H{sub y} groups having high kinetic energy and high charge state. At a laser pulse energy of 150 J the H{sup +}, C{sup n+} ions (n=1 to 6) are emitted from the plasma with velocities of the order of 10{sup 8} cm/s, while the C{sub x}H{sub y} groups and the carbon clusters, detected up to C{sub 16}, have a velocity about one or two order magnitude lower. The laser ablation process produces a deep crater in the polymer, which depth depends on the laser pulse energy and it is of the order of 500 {mu}m. The crater volume increases with the laser pulse energy. Results demonstrated that the laser radiation modifies the polymer chains because dehydrogenated material and carbon-like structures are detected in the crater walls and in the bottom of the crater, respectively. A comparison of the experimental results with the data available in literature is presented and discussed.

Double pulse laser ablation and plasma: Laser induced breakdown spectroscopy signal enhancement

International Nuclear Information System (INIS)

Babushok, V.I.; DeLucia, F.C.; Gottfried, J.L.; Munson, C.A.; Miziolek, A.W.

2006-01-01

A review of recent results of the studies of double laser pulse plasma and ablation for laser induced breakdown spectroscopy applications is presented. The double pulse laser induced breakdown spectroscopy configuration was suggested with the aim of overcoming the sensitivity shortcomings of the conventional single pulse laser induced breakdown spectroscopy technique. Several configurations have been suggested for the realization of the double pulse laser induced breakdown spectroscopy technique: collinear, orthogonal pre-spark, orthogonal pre-heating and dual pulse crossed beam modes. In addition, combinations of laser pulses with different wavelengths, different energies and durations were studied, thus providing flexibility in the choice of wavelength, pulse width, energy and pulse sequence. The double pulse laser induced breakdown spectroscopy approach provides a significant enhancement in the intensity of laser induced breakdown spectroscopy emission lines up to two orders of magnitude greater than a conventional single pulse laser induced breakdown spectroscopy. The double pulse technique leads to a better coupling of the laser beam with the plasma plume and target material, thus providing a more temporally effective energy delivery to the plasma and target. The experimental results demonstrate that the maximum effect is obtained at some optimum separation delay time between pulses. The optimum value of the interpulse delay depends on several factors, such as the target material, the energy level of excited states responsible for the emission, and the type of enhancement process considered. Depending on the specified parameter, the enhancement effects were observed on different time scales ranging from the picosecond time level (e.g., ion yield, ablation mass) up to the hundred microsecond level (e.g., increased emission intensity for laser induced breakdown spectroscopy of submerged metal target in water). Several suggestions have been proposed to explain

The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

CERN Document Server

Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

1999-01-01

Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

Laser safety and practice

International Nuclear Information System (INIS)

Low, K.S.

1995-01-01

Lasers are finding increasing routine applications in many areas of science, medicine and industry. Though laser radiation is non-ionizing in nature, the usage of high power lasers requires specific safety procedures. This paper briefly outlines the properties of laser beams and various safety procedures necessary in their handling and usage. (author)

Laser Applications in Orthodontics

Science.gov (United States)

Heidari, Somayeh; Torkan, Sepideh

2013-01-01

A laser is a collimated single wavelength of light which delivers a concentrated source of energy. Soon after different types of lasers were invented, investigators began to examine the effects of different wavelengths of laser energy on oral tissues, routine dental procedures and experimental applications. Orthodontists, along with other specialist in different fields of dentistry, can now benefit from several different advantages that lasers provide during the treatment process, from the beginning of the treatment, when separators are placed, to the time of resin residues removal from the tooth surface at the end of orthodontic treatment. This article outlines some of the most common usages of laser beam in orthodontics and also provides a comparison between laser and other conventional method that were the standard of care prior to the advent of laser in this field. PMID:25606324

Lasers in materials science

CERN Document Server

Ossi, Paolo; Zhigilei, Leonid

2014-01-01

This book covers various aspects of lasers in materials science, including a comprehensive overview on basic principles of laser-materials interactions and applications enabled by pulsed laser systems.  The material is organized in a coherent way, providing the reader with a harmonic architecture. While systematically covering the major current and emerging areas of lasers processing applications, the Volume provides examples of targeted modification of material properties achieved through careful control of the processing conditions and laser irradiation parameters. Special emphasis is placed on specific strategies aimed at nanoscale control of material structure and properties to match the stringent requirements of modern applications.  Laser fabrication of novel nanomaterials, which expands to the domains of photonics, photovoltaics, sensing, and biomedical applications, is also discussed in the Volume. This book assembles chapters based on lectures delivered at the Venice International School on Lasers...

Laser-powered lunar base

International Nuclear Information System (INIS)

Costen, R.; Humes, D.H.; Walker, G.H.; Williams, M.D.; Deyoung, R.J.

1989-01-01

The objective was to compare a nuclear reactor-driven Sterling engine lunar base power source to a laser-to-electric converter with orbiting laser power station, each providing 1 MW of electricity to the lunar base. The comparison was made on the basis of total mass required in low-Earth-orbit for each system. This total mass includes transportation mass required to place systems in low-lunar orbit or on the lunar surface. The nuclear reactor with Sterling engines is considered the reference mission for lunar base power and is described first. The details of the laser-to-electric converter and mass are discussed. The next two solar-driven high-power laser concepts, the diode array laser or the iodine laser system, are discussed with associated masses in low-lunar-orbit. Finally, the payoff for laser-power beaming is summarized

Fast-electron-relaxation measurement for laser-solid interaction at relativistic laser intensities

International Nuclear Information System (INIS)

Chen, H.; Shepherd, R.; Chung, H. K.; Kemp, A.; Hansen, S. B.; Wilks, S. C.; Ping, Y.; Widmann, K.; Fournier, K. B.; Beiersdorfer, P.; Dyer, G.; Faenov, A.; Pikuz, T.

2007-01-01

We present measurements of the fast-electron-relaxation time in short-pulse (0.5 ps) laser-solid interactions for laser intensities of 10 17 , 10 18 , and 10 19 W/cm 2 , using a picosecond time-resolved x-ray spectrometer and a time-integrated electron spectrometer. We find that the laser coupling to hot electrons increases as the laser intensity becomes relativistic, and that the thermalization of fast electrons occurs over time scales on the order of 10 ps at all laser intensities. The experimental data are analyzed using a combination of models that include Kα generation, collisional coupling, and plasma expansion

Research of time fiducial and imaging VISAR laser for Shenguang-III laser facility

Science.gov (United States)

Zhang, Rui; Wang, Zhenguo; Tian, Xiaocheng; Zhou, Dandan; Zhu, Na; Wang, Jianjun; Li, Mingzhong; Xu, Dangpeng; Dang, Zhao; Hu, Dongxia; Zhu, Qihua; Zheng, Wanguo; Wang, Feng

2015-10-01

Time fiducial laser is an important tool for the precise measurement in high energy density physics experiments. The VISAR probe laser is also vital for shock wave diagnostics in ICF experiments. Here, time fiducial laser and VISAR light were generated from one source on SG-III laser facility. After generated from a 1064-nm DFB laser, the laser is modulated by an amplitude modulator driven by 10 GS/s arbitrary waveform generator. Using time division multiplexing technology, the ten-pulse time fiducial laser and the 20-ns VISAR pulse were split by a 1×2 multiplexer and then chosen by two acoustic optic modulators. Using the technique, cost of the system was reduced. The technologies adopted in the system also include pulse polarization stabilization, high precision fiber coupling and energy transmission. The time fiducial laser generated synchronized 12-beam 2ω and 4-beam 3ω laser, providing important reference marks for different detectors and making it convenient for the analysis of diagnostic data. After being amplified by fiber amplifiers and Nd:YAG rod amplifiers, the VISAR laser pulse was frequency-converted to 532-nm pulse by a thermally controlled LBO crystal with final output energy larger than 20 mJ. Finally, the green light was coupled into a 1-mm core diameter, multimode fused silica optical fiber and propagated to the imaging VISAR. The VISAR laser has been used in the VISAR diagnostic physics experiments. Shock wave loading and slowdown processes were measured. Function to measure velocity history of shock wave front movement in different kinds of materials was added to the SG-III laser facility.

Laser antisepsis of Phorphyromonas gingivalis in vitro with dental lasers

Science.gov (United States)

Harris, David M.

2004-05-01

It has been shown that both pulsed Nd:YAG (1064nm) and continuous diode (810nm) dental lasers kill pathogenic bacteria (laser antisepsis), but a quantitative method for determining clinical dosimetry does not exist. The purpose of this study was to develop a method to quantify the efficacy of ablation of Porphyromonas gingivalis (Pg) in vitro for two different lasers. The ablation thresholds for the two lasers were compared in the following manner. The energy density was measured as a function of distance from the output of the fiber-optic delivery system. Pg cultures were grown on blood agar plates under standard anaerobic conditions. Blood agar provides an approximation of gingival tissue for the wavelengths tested in having hemoglobin as a primary absorber. Single pulses (Nd:YAG: 100- Œs diode: 100-msec) of laser energy were delivered to Pg colonies and the energy density was increased until the appearance of a small plume was observed coincident with a laser pulse. The energy density at this point defines the ablation threshold. Ablation thresholds to a single pulse were determined for both Pg and for blood agar alone. The large difference in ablation thresholds between the pigmented pathogen and the host matrix for pulsed-Nd:YAG represented a significant therapeutic ratio and Pg was ablated without visible effect on the blood agar. Near threshold the 810-nm diode laser destroyed both the pathogen and the gel. Clinically, the pulsed Nd:YAG may selectively destroy pigmented pathogens leaving the surrounding tissue intact. The 810-nm diode laser may not demonstrate this selectivity due to its longer pulse length and greater absorption by hemoglobin.

Latest development of laser cutting

OpenAIRE

Wetzig, Andreas; Herwig, Patrick; Hauptmann, Jan; Goppold, Cindy; Baumann, Robert; Fürst, Andreas; Rose, Michael; Pinder, Thomas; Mahrle, Achim; Beyer, Eckhard

2016-01-01

Laser cutting was one of the first applications of laser material processing. Today, laser cutting is the most widespread application among laser material processing besides laser marking. Meanwhile, nearly each material can be cut by means of a laser, in particular since ultra short pulse lasers are available in the power range of up to 100 W. The to be cut material can come with thicknesses from a few microns till tens of millimeters as flat stock or as free form shapes. The paper will conc...

High power lasers

CERN Document Server

Niku-Lari, A

1989-01-01

The use of lasers for the working and treatment of materials is becoming increasingly common in industry. However, certain laser applications, for example, in welding, cutting and drilling, are more widely exploited than others. Whilst the potential of lasers for the surface treatment of metals is well recognised, in practice, this particular application is a relative newcomer. The 24 papers in this volume present the latest research and engineering developments in the use of lasers for processes such as surface melting, surface alloying and cladding, and machining, as well as discussing th

Performance of a 200-J KrF laser amplifier for laser fusion research

International Nuclear Information System (INIS)

Owadano, Y.; Okuda, I.; Tanimoto, M.; Kasai, T.; Matsumoto, Y.; Yaoita, A.; Nemoto, F.; Komeiji, S.; Yano, M.

1986-01-01

An e-beam-pumped KrF laser has been developed as a middle-stage amplifier of a 1-kJ system for laser fusion research. The laser consists of one Marx generator (1MV, 11kJ), two PFLs (4.6 Ω, 100ns) with laser triggered output switches, two e-beam diodes (10 X 60 cm/sup 2/), and a laser cell (20- X 20- X 60-cm/sup 3/ active volume). Two e-beams are injected into the cell through carbon-sprayed Kapton anode and pressure foils. Up to now, a 120-J (70-ns) laser pulse has been generated with a 90% output coupling flat-flat resonator at 80% voltage operation. Overall efficiency is 1.5% in this case. A series of experiments has been performed with the laser to measure gain characteristics of a Kr-rich mixture, which is predicted to be more efficient than a normal Ar mixture in a high-laser-intensity region (>10 MW cm/sup -2/). An injection-locked oscillator mode was used to obtain a well-defined high-intensity laser beam, and a saturated intracavity intensity was measured

Fluorescence-pumped photolytic gas laser system for a commercial laser fusion power plant

International Nuclear Information System (INIS)

Monsler, M.J.

1977-01-01

The first results are given for the conceptual design of a short-wavelength gas laser system suitable for use as a driver (high average power ignition source) for a commercial laser fusion power plant. A comparison of projected overall system efficiencies of photolytically excited oxygen, sulfur, selenium and iodine lasers is described, using a unique windowless laser cavity geometry which will allow scaling of single amplifier modules to 125 kJ per aperture for 1 ns pulses. On the basis of highest projected overall efficiency, a selenium laser is chosen for a conceptual power plant fusion laser system. This laser operates on the 489 nm transauroral transition of selenium, excited by photolytic dissociation of COSe by ultraviolet fluorescence radiation. Power balances and relative costs for optics, electrical power conditioning and flow conditioning of both the laser and fluorescer gas streams are discussed for a system with the following characteristics: 8 operating modules, 2 standby modules, 125 kJ per module, 1.4 pulses per second, 1.4 MW total average power. The technical issues of scaling visible and near-infrared photolytic gas laser systems to this size are discussed

Laser lipolysis: skin tightening in lipoplasty using a diode laser.

Science.gov (United States)

Wolfenson, Moisés; Hochman, Bernardo; Ferreira, Lydia Massako

2015-05-01

New devices have been developed for surgical repair of deformities caused by localized fat deposits associated with skin laxity. The use of these devices requires the adoption of safety parameters. The aim of this study was to investigate skin tightening by laser lipolysis, using a dual-wavelength diode laser. This prospective, cross-sectional study was conducted between June of 2008 and July of 2010 with 41 consecutive patients who underwent laser lipolysis to correct contour deformities. Laser lipolysis was performed with a diode laser operating at two wavelengths (924 and 975 nm) controlled independently, and using three different tip lengths, allowing treatment of small, medium, and large areas of adipose tissue. The procedure was performed under local anesthesia in a surgical setting. To calculate the optimal cumulative energy, a total energy dose of 5 kJ/10 × 10-cm skin area was used as a safety parameter to prevent treatment complications. The circumferences of body regions were measured preoperatively, immediately after surgery, and 90 days later. Measurements were compared using the Wilcoxon test at a significance level of 0.05 (p Laser lipolysis results in progressive skin tightening over time. Therapeutic, IV.

Theoretical and experimental aspects of laser cutting with a direct diode laser

Science.gov (United States)

Costa Rodrigues, G.; Pencinovsky, J.; Cuypers, M.; Duflou, J. R.

2014-10-01

Recent developments in beam coupling techniques have made it possible to scale up the power of diode lasers with a laser beam quality suitable for laser cutting of metal sheets. In this paper a prototype of a Direct Diode Laser (DDL) source (BPP of 22 mm-mrad) is analyzed in terms of efficiency and cut performance and compared with two established technologies, CO2 and fiber lasers. An analytical model based on absorption calculations is used to predict the performance of the studied laser source with a good agreement with experimental results. Furthermore results of fusion cutting of stainless steel and aluminium alloys as well as oxygen cutting of structural steel are presented, demonstrating that industrial relevant cutting speeds with high cutting quality can now be achieved with DDL.

Note: Digital laser frequency auto-locking for inter-satellite laser ranging.

Science.gov (United States)

Luo, Yingxin; Li, Hongyin; Yeh, Hsien-Chi

2016-05-01

We present a prototype of a laser frequency auto-locking and re-locking control system designed for laser frequency stabilization in inter-satellite laser ranging system. The controller has been implemented on field programmable gate arrays and programmed with LabVIEW software. The controller allows initial frequency calibrating and lock-in of a free-running laser to a Fabry-Pérot cavity. Since it allows automatic recovery from unlocked conditions, benefit derives to automated in-orbit operations. Program design and experimental results are demonstrated.

Note: Digital laser frequency auto-locking for inter-satellite laser ranging

International Nuclear Information System (INIS)

Luo, Yingxin; Yeh, Hsien-Chi; Li, Hongyin

2016-01-01

We present a prototype of a laser frequency auto-locking and re-locking control system designed for laser frequency stabilization in inter-satellite laser ranging system. The controller has been implemented on field programmable gate arrays and programmed with LabVIEW software. The controller allows initial frequency calibrating and lock-in of a free-running laser to a Fabry-Pérot cavity. Since it allows automatic recovery from unlocked conditions, benefit derives to automated in-orbit operations. Program design and experimental results are demonstrated.

Note: Digital laser frequency auto-locking for inter-satellite laser ranging

Energy Technology Data Exchange (ETDEWEB)

Luo, Yingxin; Yeh, Hsien-Chi, E-mail: yexianji@mail.hust.edu.cn [MOE Key Laboratory of Fundamental Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Li, Hongyin [MOE Key Laboratory of Fundamental Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Automation, Huazhong University of Science and Technology, Wuhan 430074 (China)

2016-05-15

We present a prototype of a laser frequency auto-locking and re-locking control system designed for laser frequency stabilization in inter-satellite laser ranging system. The controller has been implemented on field programmable gate arrays and programmed with LabVIEW software. The controller allows initial frequency calibrating and lock-in of a free-running laser to a Fabry-Pérot cavity. Since it allows automatic recovery from unlocked conditions, benefit derives to automated in-orbit operations. Program design and experimental results are demonstrated.

CO2 laser and plasma microjet process for improving laser optics

Science.gov (United States)

Brusasco, Raymond M.; Penetrante, Bernardino M.; Butler, James A.; Grundler, Walter; Governo, George K.

2003-09-16

A optic is produced for operation at the fundamental Nd:YAG laser wavelength of 1.06 micrometers through the tripled Nd:YAG laser wavelength of 355 nanometers by the method of reducing or eliminating the growth of laser damage sites in the optics by processing the optics to stop damage in the optics from growing to a predetermined critical size. A system is provided of mitigating the growth of laser-induced damage in optics by virtue of very localized removal of glass and absorbing material.

Laser wakefield acceleration

International Nuclear Information System (INIS)

Esarey, E.; Ting, A.; Sprangle, P.

1989-01-01

The laser wakefield accelerator (LWFA) is a novel plasma based electron acceleration scheme which utilizes a relativistic optical guiding mechanism for laser pulse propagation. In the LWFA, a short, high power, single frequency laser pulse is propagated through a plasma. As the laser pulse propagates, its radial and axial ponderomotive forces nonresonantly generate large amplitude plasma waves (wakefields) with a phase velocity equal to the group velocity of the pulse. A properly phased electron bunch may then be accelerated by the axial wakefield and focused by the transverse wakefield. Optical guiding of the laser pulse in the plasma is necessary in order to achieve high energies in a single stage of acceleration. At sufficiently high laser powers, optical guiding may be achieved through relativistic effects associated with the plasma electrons. Preliminary analysis indicates that this scheme may overcome some of the difficulties present in the plasma beat wave accelerator and in the plasma wakefield accelerator. Analytical and numerical calculations are presented which study both laser pulse propagation within a plasma as well as the subsequent generation of large amplitude plasma waves. In addition, the generation of large amplitude plasma waves in regimes where the plasma waves become highly nonlinear is examined

Synergistic skin heat shock protein expression in response to combined laser treatment with a diode laser and ablative fractional lasers.

Science.gov (United States)

Paasch, Uwe; Sonja, Grunewald; Haedersdal, Merete

2014-06-01

Diode laser-based skin heating has been shown to minimise scars by interfering with wound healing responses through the induction of heat shock proteins (HSP). HSP are also induced after ablative fractional laser (AFXL) wound healing. AFXL itself is highly recommended for scar treatment. Therefore, the sequential combination of both modalities may produce superior outcomes. The aim of this study was to examine the pretreatment effects of a diode laser before AFXL on wound healing responses in terms of HSP up-regulation in an in vitro model. Immediate responses and responses on days 1, 3 or 6 post-procedure were studied in an in vitro porcine skin model (n = 240). Untreated samples served as control. Immunohistochemical investigation (Hsp70) was performed in all untreated controls, diode laser-, AFXL-, and in diode laser + AFXL-treated samples. Hsp70 was shown to be up-regulated by all interventions between days 1 and 6 after interventions. The largest effect was caused by the combination of a diode laser and an AFXL procedure. Diode laser exposure induces a skin HSP response that can be further enhanced by sequential AFXL treatment. Clinical studies are necessary to investigate the dose response of HSP on scar formation and refine suitable laser exposure settings.

Development and characterization of femtosecond laser driven soft x-ray lasers

International Nuclear Information System (INIS)

Bettaibi, I.

2005-06-01

Coherent soft x-ray sources have an important potential for scientific, medical and industrial applications. The development of high intensity laser systems allowed the realization of new coherent and fast soft x-ray sources like high order harmonic generation and soft x-ray lasers. These sources are compact, cheaper than traditional sources such as synchrotrons, and are thus interesting. This thesis presents the study of a new soft x-ray laser pumped by a femto-second laser beam working at 10 Hz. The circularly polarized ultra intense laser is longitudinally focused in a cell filled with xenon or krypton, to obtain the amplification of two lasing lines at 41.8 nm and 32.8 nm in Pd-like xenon and Ni-like krypton respectively. We carry out an experimental and numerical study of the source to understand the importance of different parameters such as the laser intensity and polarization, the gas pressure and the cell length. We have also spatially and temporally characterized the soft x-ray laser beam. To compensate the refraction of the driving laser we have investigated guiding techniques consisting in creating a plasma channel by electric discharge or using the multiple reflections of the driving laser on the internal walls of the dielectric tubes of sapphire or glass. A spectacular improvement of the source performances has been observed in both cases. Finally, we present a preliminary study on a different x-ray scheme: the inner shell photo pumping of neutral atoms. We have developed an optical system, which should create the appropriate conditions for the realisation of short wavelength x-ray amplifier. (author)

New photoionization lasers pumped by laser-induced plasma radiation

International Nuclear Information System (INIS)

Hube, M.; Dieckmann, M.; Beigang, R.; Welling, H.; Wellegehausen, B.

1988-01-01

Innershell photoionization of atomic gases and vapors by soft x rays from a laser-produced plasma is a potential method for making lasers at short wavelengths. Normally, in such experiments only a single plasma spot or plasma line is created for the excitation. This gives high excitation rates but only a short excitation length. At high excitation rates detrimental influences, such as amplified spontaneous emission, optical saturation, or quenching processes, may decrease or even destroy a possible inversion. Therefore, it seems to be more favorable to use a number of separated plasma spots with smaller excitation rates and larger excitation lengths. As a test, a three-plasma spot device was constructed and used in the well-known Cd-photoionization laser at 442 nm. With a 600-mJ Nd:YAH laser (pulse length, 8 ns) for plasma production, output energies up to 300 μJ have been measured, which is more than a doubling of so far obtained data. On innershell excitation, levels may be populated that allow direct lasers as in the case of Cd or that are metastable and cannot be directly coupled to lower levels. In this case modifications in the excitation process are necessary. Such modifications may be an optical pump process in the atom prior to the innershell photoionization or an optical pump process (population transfer process) after the innershell ionization, leading to Raman or anti-Stokes Raman-type laser emissions. With these techniques and the developed multiplasma spot excitation device a variety of new laser emissions in K and Cs ions have been achieved which are indicated in the level schemes

Laser spectroscopy

CERN Document Server

Demtröder, Wolfgang

Keeping abreast of the latest techniques and applications, this new edition of the standard reference and graduate text on laser spectroscopy has been completely revised and expanded. While the general concept is unchanged, the new edition features a broad array of new material, e.g., ultrafast lasers (atto- and femto-second lasers) and parametric oscillators, coherent matter waves, Doppler-free Fourier spectroscopy with optical frequency combs, interference spectroscopy, quantum optics, the interferometric detection of gravitational waves and still more applications in chemical analysis, medical diagnostics, and engineering.

Laser induced nuclear reactions

International Nuclear Information System (INIS)

Ledingham, Ken; McCanny, Tom; Graham, Paul; Fang Xiao; Singhal, Ravi; Magill, Joe; Creswell, Alan; Sanderson, David; Allott, Ric; Neely, David; Norreys, Peter; Santala, Marko; Zepf, Matthew; Watts, Ian; Clark, Eugene; Krushelnick, Karl; Tatarakis, Michael; Dangor, Bucker; Machecek, Antonin; Wark, Justin

1998-01-01

Dramatic improvements in laser technology since 1984 have revolutionised high power laser technology. Application of chirped-pulse amplification techniques has resulted in laser intensities in excess of 10 19 W/cm 2 . In the mid to late eighties, C. K. Rhodes and K. Boyer discussed the possibility of shining laser light of this intensity onto solid surfaces and to cause nuclear transitions. In particular, irradiation of a uranium target could induce electro- and photofission in the focal region of the laser. In this paper it is shown that μCi of 62 Cu can be generated via the (γ,n) reaction by a laser with an intensity of about 10 19 Wcm -2

Temperature stabilization of injection lasers

International Nuclear Information System (INIS)

Albanese, A.

1987-01-01

Apparatus which stabilizes the temperature, and thereby the output wavelength, of an injection laser. Means monitor the laser terminal voltage across a laser and derive a voltage therefrom which is proportional to the junction voltage of the laser. Means compares the voltage to a reference value from source and a temperature controller adjusts the laser temperature in response to the results of the comparison. Further embodiments of the present invention vary the output wavelength of the laser by varying the reference value from source against which the laser junction voltage is compared. (author)

IceBridge Riegl Laser Altimeter L1B Time-Tagged Laser Ranges