WorldWideScience

Sample records for pseudomorphic ingaas lasers

  1. AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

    Science.gov (United States)

    Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

    1997-10-01

    Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

  2. Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

    International Nuclear Information System (INIS)

    Pearson, J.L.

    1999-03-01

    Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

  3. InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer

    NARCIS (Netherlands)

    Shu, Y.; Li, Gang; Tan, H.H.; Jagadish, C.; Karouta, F.

    1996-01-01

    In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser

  4. Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Thompson, M.G.; Marinelli, C.; Chu, Y.

    Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.......Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance....

  5. Shape-engineered epitaxial InGaAs quantum rods for laser applications

    International Nuclear Information System (INIS)

    Li, L. H.; Ridha, P.; Chauvin, N.; Fiore, A.; Patriarche, G.

    2008-01-01

    We apply artificial shape engineering of epitaxial semiconductor nanostructures to demonstrate InGaAs quantum rods (QRs), nanocandles, and quantum dots-in-rods on a GaAs substrate. The evolution of the QRs from a zero-dimensional to one-dimensional confinement is evidenced by systematically measuring the photoluminescence and photoluminescence decay as a function of the rod length. Lasers based on a three-stack QR active region are demonstrated at room temperature, validating the applicability of the QRs in the real devices

  6. Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

    Science.gov (United States)

    Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

    2018-01-01

    We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

  7. Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

    International Nuclear Information System (INIS)

    Kuzmenkov, A. G.; Ustinov, V. M.; Sokolovskii, G. S.; Maleev, N. A.; Blokhin, S. A.; Deryagin, A. G.; Chumak, S. V.; Shulenkov, A. S.; Mikhrin, S. S.; Kovsh, A. R.; McRobbie, A. D.; Sibbett, W.; Cataluna, M. A.; Rafailov, E. U.

    2007-01-01

    The authors report the observation of strong self-pulsations in molecular-beam epitaxy-grown oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. At continuous-wave operation, self-pulsations with pulse durations of 100-300 ps and repetition rates of 0.2-0.6 GHz were measured. The average optical power of the pulsations was 0.5-1.0 mW at the laser continuous-wave current values of 1.5-2.5 mA

  8. Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

    Science.gov (United States)

    Demir, Ilkay; Altuntas, Ismail; Bulut, Baris; Ezzedini, Maher; Ergun, Yuksel; Elagoz, Sezai

    2018-05-01

    We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced quasi two-dimensional electrons between 10 s pulsed growth n-doped InGaAs epilayers to improve both carrier concentration and mobility of structure by applying pulsed growth and doping methods towards increasing the Si dopant concentration in InGaAs. Additionally, the V/III ratio optimization under fixed group III source flow has been investigated with this new method to understand the effects on both crystalline quality and electrical properties of n-InGaAs epilayers. Finally, we have obtained high crystalline quality of n-InGaAs epilayers grown by 10 s pulsed as a contact layer with 2.8 × 1019 cm‑3 carrier concentration and 1530 cm2 V‑1 s‑1 mobility.

  9. Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

    Science.gov (United States)

    Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao

    2017-12-11

    Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

  10. Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators

    Science.gov (United States)

    Macdougal, Michael; Geske, Jon; Wang, Chad; Follman, David

    2011-06-01

    We describe the factors that go into the component choices for a short wavelength IR (SWIR) imager, which include the SWIR sensor, the lens, and the illuminator. We have shown the factors for reducing dark current, and shown that we can achieve well below 1.5 nA/cm2 for 15 μm devices at 7 °C. In addition, we have mated our InGaAs detector arrays to 640×512 readout integrated integrated circuits to make focal plane arrays (FPAs). The resulting FPAs are capable of imaging photon fluxes with wavelengths between 1 and 1.6 μm at low light levels. The dark current associated with these FPAs is extremely low, exhibiting a mean dark current density of 0.26 nA/cm2 at 0 °C. Noise due to the readout can be reduced from 95 to 57 electrons by using off-chip correlated double sampling. In addition, Aerius has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide low-speckle illumination, and provide artifact-free imagery versus conventional laser illuminators.

  11. Characterization of modulation doped pseudomorphic AlGaAs/InGaAs/GaAs HEMT structures by electron beam electroreflectance and photoluminescence

    International Nuclear Information System (INIS)

    Herman, M.A.; Ward, I.D.; Kopf, R.F.; Pearton, S.J.; Jones, E.D.

    1990-01-01

    The authors have investigated the optical transitions present in MBE-grown modulation doped pseudomorphic Al x Ga 1-x As/In y Ga 1-y As/GaAs HEMT structures of 120 Angstrom InGaAs thickness, y values 0 to 0.28, and x values 0.20 to 0.30. From both 300K electron beam electroreflectance (EBER) and 4K photoluminescence (PL) measurements the authors observe transitions from the InGaAs strained quantum well layer. The intensity and lineshape of the InGaAs transition in both optical spectra are affected by processing temperatures, and provides an indication of the quality of the HEMT

  12. Atmospheric CH 4 and H 2 O Monitoring With Near-Infrared InGaAs Laser Diodes by the SDLA, a Balloonborne Spectrometer for Tropospheric and Stratospheric In Situ Measurements

    Science.gov (United States)

    Durry, Georges; Megie, Gerard

    1999-12-01

    The Spectrom tre Diodes Laser Accordables (SDLA), a balloonborne spectrometer devoted to the in situ measurement of CH 4 and H 2 O in the atmosphere that uses commercial distributed-feedback InGaAs laser diodes in combination with differential absorption spectroscopy, is described. Absorption spectra of CH 4 (in the 1.653- m region) and H 2 O (in the 1.393- m region) are simultaneously sampled at 1-s intervals by coupling with optical fibers of two near-infrared laser diodes to a Herriott multipass cell open to the atmosphere. Spectra of methane and water vapor in an altitude range of 1 to 31 km recorded during the recent balloon flights of the SDLA are presented. Mixing ratios with a precision error ranging from 5% to 10% are retrieved from the atmospheric spectra by a nonlinear least-squares fit to the spectral line shape in conjunction with in situ simultaneous pressure and temperature measurements.

  13. Materials and device characteristics of pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP high electron mobility transistors

    International Nuclear Information System (INIS)

    Ballingall, J.M.; Ho, P.; Tessmer, G.J.; Martin, P.A.; Yu, T.H.; Choa, P.C.; Smith, P.M.; Duh, K.H.G.

    1990-01-01

    High electron mobility transistors (HEMTs) with single quantum well active layers composed of pseudomorphic InGaAs grown on GaAs and InP are establishing new standards of performance for microwave and millimeter wave applications. This is due to recent progress in the molecular beam epitaxial growth of strained InGaAs heterostructures coupled with developments in short gate length (sub-0.2 μm) device fabrication technology. This paper reviews this progress and the current state-of-the-art for materials and devices

  14. Growth of pseudomorphic structures through organic epitaxy

    International Nuclear Information System (INIS)

    Kaviyil, Sreejith Embekkat; Sassella, Adele; Borghesi, Alessandro; Campione, Marcello; Su Genbo; He Youping; Chen Chenjia

    2012-01-01

    The control of molecular orientation in thin solid film phases of organic semiconductors is a basic factor for the exploitation of their physical properties for optoelectronic devices. We compare structural and optical properties of thin films of the organic semiconductor α-quarterthiophene grown by molecular beam epitaxy on different organic substrates. We show how epitactic interactions, characteristic of the surface of organic crystals, can drive the orientation of the crystalline overlayer and the selection of specific polymorphs and new pseudomorphic phases. We identify a key role in this phenomenon played by the marked groove-like corrugations present in some organic crystal surfaces. Since different polymorphs possess rather different performance in terms of, e.g., charge carrier mobility, this strategy is demonstrated to allow for the growth of oriented phases with enhanced physical properties, while keeping the substrate at room temperature. These results provide useful guidelines for the design of technological substrates for organic epitaxy and they substantiate the adoption of an organic epitaxy approach for the fabrication of optoelectronic devices based on thin films of organic semiconductors.

  15. Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

    Science.gov (United States)

    Li, Hui; Jia, Xiaowei

    2018-05-01

    The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

  16. Optical Properties of InGaAs/ GaAs Multi Quantum Wells Structure Grown By Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    Mohd Sharizal Alias; Mohd Fauzi Maulud; Mohd Razman Yahya; Abdul Fatah Awang Mat; Suomalainen, Soile

    2008-01-01

    Inclusive analysis on the optical characteristics of InGaAs/ GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/ GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/ GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication. (author)

  17. Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates

    International Nuclear Information System (INIS)

    Rekaya, S.; Sfaxi, L.; Bru-Chevallier, C.; Maaref, H.

    2011-01-01

    InGaAs/AlGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT) structures were grown by Molecular Beam Epitaxy (MBE) on (3 1 1)A GaAs substrates with different well widths, and studied by photoluminescence (PL) spectroscopy as a function of temperature and excitation density. The PL spectra are dominated by one or two spectral bands, corresponding, respectively, to one or two populated electron sub-bands in the InGaAs quantum well. An enhancement of PL intensity at the Fermi level energy (E F ) in the high-energy tail of the PL peak is clearly observed and associated with the Fermi edge singularity (FES). This is practically detected at the same energy for all samples, in contrast with energy transitions in the InGaAs channel, which are shifted to lower energy with increasing channel thickness. PL spectra at low temperature and low excitation density are used to optically determine the density of the two-dimensional electron gas (2DEG) in the InGaAs channel for different thicknesses. The results show an enhancement of the 2DEG density when the well width increases, in good agreement with our previous theoretical study.

  18. InGaAs focal plane array developments at III-V Lab

    Science.gov (United States)

    Rouvié, Anne; Reverchon, Jean-Luc; Huet, Odile; Djedidi, Anis; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Bria, Toufiq; Pires, Mauricio; Decobert, Jean; Costard, Eric

    2012-06-01

    SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. For few years, III-VLab has been studying InGaAs imagery, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has lead to put quickly on the market a 320x256 InGaAs module, exhibiting high performances in terms of dark current, uniformity and quantum efficiency. In this paper, we present the last developments achieved in our laboratory, mainly focused on increasing the pixels number to VGA format associated to pixel pitch decrease (15μm) and broadening detection spectrum toward visible wavelengths. Depending on targeted applications, different Read Out Integrated Circuits (ROIC) have been used. Low noise ROIC have been developed by CEA LETI to fit the requirements of low light level imaging whereas logarithmic ROIC designed by NIT allows high dynamic imaging adapted for automotive safety.

  19. Crystallization of ikaite and its pseudomorphic transformation into calcite: Raman spectroscopy evidence

    OpenAIRE

    Sánchez-Pastor, Nuria; Oehlerich, Markus; Astilleros, José Manuel; Kaliwoda, Melanie; Mayr, Christoph C.; Fernández Díaz, Lurdes; Schmahl, Wolfgang W.

    2015-01-01

    Ikaite (CaCO3·6H2O) is a metastable phase that crystallizes in nature from alkaline waters with high phosphate concentrations at temperatures close to 0 °C. This mineral transforms into anhydrous calcium carbonate polymorphs when temperatures rise or when exposed to atmospheric conditions. During the transformation in some cases the shape of the original ikaite crystal is preserved as a pseudomorph. Pseudomorphs after ikaite are considered as a valuable paleoclimatic indicator. In this work w...

  20. Manufacturing of calcium phosphate scaffolds by pseudomorphic transformation of gypsum

    Energy Technology Data Exchange (ETDEWEB)

    Araujo Batista, H. de.; Batista Cardoso, M.; Sales Vasconcelos, A.; Vinicius Lia Fook, M.; Rodriguez Barbero, M. A.; Garcia Carrodeguas, R.

    2016-08-01

    Carbonated hydroxyapatite (CHAp) and β-tricalcium phosphate (β-TCP) have been employed for decades as constituents of scaffolds for bone regeneration because they chemically resemble bone mineral. In this study, the feasibility to manufacture CHAp/β-TCP scaffolds by pseudomorphic transformation of casted blocks of gypsum was investigated. The transformation was carried out by immersing the precursor gypsum block in 1 M (NH{sub 4}){sub 2}HPO{sub 4}/1.33 M NH{sub 4}OH solution with liquid/solid ratio of 10 mL/g and autoclaving at 120 degree centigrade and 203 kPa (2 atm) for 3 h at least. Neither shape nor dimensions significantly changed during transformation. The composition of scaffolds treated for 3 h was 70 wt.% CHAp and 30 wt.% β-TCP, and their compressive and diametral compressive strengths were 6.5 ± 0.7 and 5.3 ±0.7 MPa, respectively. By increasing the time of treatment to 6 h, the composition of the scaffold enriched in β-TCP (60 wt.% CHAp and 40 wt.% β-TCP) but its compressive and diametral compressive strengths were not significantly affected (6.7 ± 0.9 and 5.4 ± 0.6 MPa, respectively). On the basis of the results obtained, it was concluded that this route is a good approach to the manufacturing of biphasic (CHAp/β-TCP) scaffolds from previously shaped pieces of gypsum. (Author)

  1. Occurrences of ikaite and pseudomorphs after ikaite in Patagonian lakes - crystal morphologies and stable isotope composition

    Science.gov (United States)

    Oehlerich, Markus; Mayr, Christoph; Griesshaber, Erika; Ohlendorf, Christian; Zolitschka, Bernd; Sánchez-Pastor, Nuria; Kremer, Barbara; Lücke, Andreas; Oeckler, Oliver; Schmahl, Wolfgang

    2010-05-01

    Ikaite (CaCO3•6H2O), a hydrated calcium carbonate mineral occasionally found in marine sediments, has so far rarely been reported from non-marine sites. Modern ikaite and calcitic pseudomorphs after ikaite were recently discovered in Patagonian Argentina at the polymictic lakes of Laguna Potrok Aike (51°57´S, 70°23´W) and Laguna Cháltel (49°57´S, 71°07´W), respectively. Both lakes are of volcanic origin and have phosphorous-rich, alkaline waters, but differ in altitude (790 m asl and 110 m asl for Laguna Cháltel and Laguna Potrok Aike, respectively) and water temperature. The aim of this study is (1) to investigate conditions for the formation of ikaite and its transformation to more stable, water-free carbonate pseudomorphs after ikaite and (2) to assess the potential of ikaite and calcite pseudomorphs after ikaite as a paleoenvironmental tool in freshwater lakes. Crystallographic, morphological and isotopic characteristics of the pseudomorphs were investigated. Ikaite crystals were found (in September 2008) primarily on aquatic macrophytes and cyanobacteria colonies at Laguna Potrok Aike. Ikaite crystals transformed quickly to calcite pseudomorphs after ikaite after recovery from the cool lake water (4°C). The crystal structure of ikaite was investigated with single crystal X-ray diffraction on samples that were permanently kept cold (in the lake water). At Laguna Cháltel calcite pseudomorphs after ikaite were discovered in littoral sediment cores from 25 m water depth. The mm-sized, porous, polycrystalline calcium carbonate aggregates from the 104 cm long sediment core of Laguna Cháltel are morphologically pseudomorphs after ikaite. SEM and XRD analyses highlight that these pseudomorphs consist of several µm-small calcite crystals in a calcitic matrix. The shape of these micro-crystals changes from rounded to fibrous with increasing sediment depth. Some specimens show casts of cyanobacteria trichomes. The oxygen isotopic composition of calcite

  2. Increasing the critical thickness of InGaAs quantum wells using strain-relief technologies

    Science.gov (United States)

    Jones, Andrew Marquis

    The advantages of optical communication through silica fiber have made long-distance electrical communication through copper wire obsolete. The two windows of operation for long-haul optical communication are centered around the wavelengths of 1.3 mum and 1.55 mum, which have minimal amounts of signal attenuation and dispersion. Benefits of optical communications within these windows include low system costs, high bandwidth, and high system reliability which have encouraged the development of emitters and receivers at these relatively long wavelengths. Long-wavelength semiconductor lasers are typically fabricated on InP substrates, but their performance suffers greatly with increases in operating temperature. Laser diodes on GaAs substrates are not as sensitive to operating temperature due to quantum-well active regions with relative deep potential barriers, but critical thickness limits the wavelength ceiling to 1.1 mum. Strain-relief technologies are currently being investigated to enable long-wavelength lasers with deeper potential wells leading to a corresponding increase in characteristic temperatures. Having a larger lattice constant than GaAs enables ternary InGaAs substrates to increase the 1.1-mum wavelength ceiling. Extending this ceiling to one of the optical communication windows could enable high-characteristic-temperature, long-wavelength lasers. Broad-area and buried-heterostructure lasers have demonstrated the potential of ternary substrates to increase characteristic temperatures and emission wavelengths. Wavelengths as long as 1.15 mum and characteristic temperatures as high as 145 K have been achieved. Reduced-area metalorganic chemical vapor deposition involves the deposition of strained materials on isolated islands. Due to the discontinuous nature of reduced-area epitaxy, strained materials are allowed to expand near the mesa edges, decreasing the overall strain in the structure. Laser diodes using this technology have been successfully

  3. Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    D' Costa, Vijay Richard, E-mail: vdcosta@asu.edu; Wang, Wei; Yeo, Yee-Chia, E-mail: eleyeoyc@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

    2016-08-14

    We investigated the compositional dependence of the near-bandgap dielectric function and the E{sub 0} critical point in pseudomorphic Ge{sub 1-x}Sn{sub x} alloys grown on Ge (100) substrate by molecular beam epitaxy. The complex dielectric functions were obtained using spectroscopic ellipsometry from 0.5 to 4.5 eV at room temperature. Analogous to the E{sub 1} and E{sub 1}+Δ{sub 1} transitions, a model consisting of the compositional dependence of relaxed alloys along with the strain contribution predicted by the deformation potential theory fully accounts for the observed compositional dependence in pseudomorphic alloys.

  4. Low-Light-Level InGaAs focal plane arrays with and without illumination

    Science.gov (United States)

    Macdougal, Michael; Geske, Jon; Wang, Chad; Follman, David

    2010-04-01

    Short wavelength IR imaging using InGaAs-based FPAs is shown. Aerius demonstrates low dark current in InGaAs detector arrays with 15 μm pixel pitch. The same material is mated with a 640x 512 CTIA-based readout integrated circuit. The resulting FPA is capable of imaging photon fluxes with wavelengths between 1 and 1.6 microns at low light levels. The mean dark current density on the FPAs is extremely low at 0.64 nA/cm2 at 10°C. Noise due to the readout can be reduced from 95 to 57 electrons by using off-chip correlated double sampling (CDS). In addition, Aerius has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide speckle-free illumination, provide artifact-free imagery versus conventional laser illuminators.

  5. VCSELs based on arrays of sub-monolayer InGaAs quantum dots

    International Nuclear Information System (INIS)

    Blokhin, S. A.; Maleev, N. A.; Kuz'menkov, A. G.; Shernyakov, Yu. M.; Novikov, I. I.; Gordeev, N. Yu.; Dyudelev, V. V.; Sokolovskii, G. S.; Kuchinskii, V. I.; Kulagina, M. M.; Maximov, M. V.; Ustinov, V. M.; Kovsh, A. R.; Mikhrin, S. S.; Ledentsov, N. N.

    2006-01-01

    Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 μm in diameter demonstrate single-mode lasing in 980-nm range with the threshold current of 0.6 mA, maximum output power up to 4 mW, and external differential efficiency of 68%. Multimode VCSELs with a (10-12)-μm aperture demonstrate ultralow internal optical loss of 0.09% per pass, which compares favorably with the best results obtained in similar lasers with undoped distributed Bragg reflectors

  6. Optical dating of relict sand wedges and composite-wedge pseudomorphs in Flanders, Belgium

    DEFF Research Database (Denmark)

    Buylaert, Jan-Pieter; Ghysels, Günther; Murray, Andrew S.

    2009-01-01

    We report on quartz Optically Stimulated Luminescence (OSL) dating of the infill of 14 relict sand wedges and composite-wedge pseudomorphs at 5 different sites in Flanders, Belgium. A laboratory dose recovery test indicates that the single-aliquot regenerative-dose (SAR) procedure is suitable for...

  7. Palaeoclimatic significance of gypsum pseudomorphs in the inner shelf sediments off Machalipatnam bay

    Digital Repository Service at National Institute of Oceanography (India)

    Rao, V.P.

    Pseudo-gypsum crystals have been found in the coarse fraction of the sediments from the inner continental shelf off Machilipatnam Bay. They range in size from 3 to 7 mm are elongate and lenticular in shape. Bassanite and calcite are pseudomorphs...

  8. Pseudomorphic-to-bulk fcc phase transition of thin Ni films on Pd(100)

    International Nuclear Information System (INIS)

    Rizzi, G.A.; Petukhov, M.; Sedona, F.; Granozzi, G.; Cossaro, A.; Bruno, F.; Cvetko, D.; Morgante, A.; Floreano, L.

    2004-01-01

    We have measured the transformation of pseudomorphic Ni films on Pd(100) into their bulk fcc phase as a function of the film thickness. We made use of x-ray diffraction and x-ray induced photoemission to study the evolution of the Ni film and its interface with the substrate. The growth of a film with tetragonally strained face centered symmetry (fct) has been observed by out-of-plane x-ray diffraction up to a limit thickness of 10 Ni pseudomorphic layers (some of them partially filled and intermixed with the substrate), where a new fcc bulklike phase is formed. After the formation of the bulklike Ni domains, we observed the pseudomorphic fct domains to disappear preserving the number of layers and their spacing. The phase transition thus proceeds via lateral growth of the bulklike phase within the pseudomorphic one, i.e., the bulklike fcc domains penetrate down to the substrate when formed. This large depth of the walls separating the domains of different phases is also indicated by the increase of the intermixing at the substrate-film interface, which starts at the onset of the transition and continues at even larger thickness. The bulklike fcc phase is also slightly strained; its relaxation towards the orthomorphic lattice structure proceeds slowly with the film thickness, being not yet completed at the maximum thickness presently studied of 30 A (∼17 layers)

  9. Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10 to the -2nd to 10 to the 8 Hz

    Science.gov (United States)

    Liu, Shih-Ming J.; Das, Mukunda B.; Peng, Chin-Kun; Klem, John; Henderson, Timothy S.

    1986-01-01

    Equivalent gate noise voltage spectra of 1-micron gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the frequency range of 0.01 Hz to 100 MHz and commpared with the noise spectra of conventional AlGaAs/GaAs MODFET's and GaAs MESFET's. The prominent generation-recombination (g-r) noise bulge commonly observed in the vicinity of 10 kHz in conventional MODFET's at 300 K does not appear in the case of the new InGaAs quantum-well MODFET. Instead, its noise spectra indicate the presence of low-intensity multiple g-r noise components superimposed on a reduced 1/f noise. The LF noise intensity in the new device appears to be the lowest among those observed in any MODFET or MESFET. The noise spectra at 82 K in the new device represent nearly true 1/f noise. This unusual low-noise behavior of the new structure suggests the effectiveness of electron confinement in the quantum well that significantaly reduces electron trapping in the n-AlGaAs, and thus eliminates the g-r noise bulge observed in conventional MODFET's.

  10. Pseudomorphic growth of organic semiconductor thin films driven by incommensurate epitaxy

    International Nuclear Information System (INIS)

    Sassella, A.; Campione, M.; Raimondo, L.; Borghesi, A.; Bussetti, G.; Cirilli, S.; Violante, A.; Goletti, C.; Chiaradia, P.

    2009-01-01

    A stable pseudomorphic phase of α-quaterthiophene, a well known organic semiconductor, is obtained by growing films with organic molecular beam epitaxy (OMBE) on a single crystal of another organic semiconductor, namely, tetracene. The structural characteristics of the new phase are investigated by monitoring in situ the OMBE process by reflectance anisotropy spectroscopy; thus assessing that incommensurate epitaxy is in this case, the driving force for tuning the molecular packing in organic molecular films and in turn, their solid state properties

  11. Calculation of band alignments and quantum confinement effects in zero- and one-dimensional pseudomorphic structures

    International Nuclear Information System (INIS)

    Yang, M.; Sturm, J.C.; Prevost, J.

    1997-01-01

    The strain field distributions and band lineups of zero-dimensional and one-dimensional strained pseudomorphic semiconductor particles inside a three-dimensional matrix of another semiconductor have been studied. The resulting strain in the particle and the matrix leads to band alignments considerably different from that in the conventional two-dimensional (2D) pseudomorphic growth case. The models are first applied to an ideal spherical and cylindrical Si 1-x Ge x particle in a large Si matrix. In contrast to the 2D case, the band alignments for both structures are predicted to be strongly type II, where the conduction-band edge and the valence-band edge of the Si matrix are both significantly lower than those in the Si 1-x Ge x inclusion, respectively. Band lineups and the lowest electron endash heavy-hole transition energies of a pseudomorphic V-groove Si 1-x Ge x quantum wire inside a large Si matrix have been calculated numerically for different size structures. The photoluminescence energies of a large Si 1-x Ge x V-groove structure on Si will be lower than those of conventional 2D strained Si 1-x Ge x for similar Ge contents. copyright 1997 The American Physical Society

  12. Metastable growth of pure wurtzite InGaAs microstructures.

    Science.gov (United States)

    Ng, Kar Wei; Ko, Wai Son; Lu, Fanglu; Chang-Hasnain, Connie J

    2014-08-13

    III-V compound semiconductors can exist in two major crystal phases, namely, zincblende (ZB) and wurtzite (WZ). While ZB is thermodynamically favorable in conventional III-V epitaxy, the pure WZ phase can be stable in nanowires with diameters smaller than certain critical values. However, thin nanowires are more vulnerable to surface recombination, and this can ultimately limit their performances as practical devices. In this work, we study a metastable growth mechanism that can yield purely WZ-phased InGaAs microstructures on silicon. InGaAs nucleates as sharp nanoneedles and expand along both axial and radial directions simultaneously in a core-shell fashion. While the base can scale from tens of nanometers to over a micron, the tip can remain sharp over the entire growth. The sharpness maintains a high local surface-to-volume ratio, favoring hexagonal lattice to grow axially. These unique features lead to the formation of microsized pure WZ InGaAs structures on silicon. To verify that the WZ microstructures are truly metastable, we demonstrate, for the first time, the in situ transformation from WZ to the energy-favorable ZB phase inside a transmission electron microscope. This unconventional core-shell growth mechanism can potentially be applied to other III-V materials systems, enabling the effective utilization of the extraordinary properties of the metastable wurtzite crystals.

  13. Crystallization of ikaite and its pseudomorphic transformation into calcite: Raman spectroscopy evidence

    Science.gov (United States)

    Sánchez-Pastor, N.; Oehlerich, Markus; Astilleros, José Manuel; Kaliwoda, Melanie; Mayr, Christoph C.; Fernández-Díaz, Lurdes; Schmahl, Wolfgang W.

    2016-02-01

    Ikaite (CaCO3·6H2O) is a metastable phase that crystallizes in nature from alkaline waters with high phosphate concentrations at temperatures close to 0 °C. This mineral transforms into anhydrous calcium carbonate polymorphs when temperatures rise or when exposed to atmospheric conditions. During the transformation in some cases the shape of the original ikaite crystal is preserved as a pseudomorph. Pseudomorphs after ikaite are considered as a valuable paleoclimatic indicator. In this work we conducted ikaite crystal growth experiments at near-freezing temperatures using the single diffusion silica gel technique, prepared with a natural aqueous solution from the polymictic lake Laguna Potrok Aike (51°57‧S, 70°23‧W) in Patagonia, Argentina. The ikaite crystals were recovered from the gels and the transformation reactions were monitored by in situ Raman spectroscopy at two different temperatures. The first spectra collected showed the characteristic features of ikaite. In successive spectra new bands at 1072, 1081 and 1086 cm-1 and changes in the intensity of bands corresponding to the OH modes were observed. These changes in the Raman spectra were interpreted as corresponding to intermediate stages of the transformation of ikaite into calcite and/or vaterite. After a few hours, the characteristics of the Raman spectrum were consistent with those of calcite. While ikaite directly transforms into calcite at 10 °C in contact with air, at 20 °C this transformation involves the formation of intermediate, metastable vaterite. During the whole process the external shape of ikaite crystals was preserved. Therefore, this transformation showed the typical characteristics of a pseudomorphic mineral replacement, involving the generation of a large amount of porosity to account for the large difference in molar volumes between ikaite and calcite. A mechanism involving the coupled dissolution of ikaite and crystallization of calcite/vaterite is proposed for this

  14. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

    Energy Technology Data Exchange (ETDEWEB)

    Robert, C., E-mail: cedric.robert@insa.rennes.fr [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Thanh, T. Nguyen; Létoublon, A.; Perrin, M.; Cornet, C.; Levallois, C.; Jancu, J.M.; Even, J. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France); Balocchi, A.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse (France); Durand, O.; Le Corre, A. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France)

    2013-08-31

    AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments. - Highlights: ► An active zone is proposed for a pseudomorphic laser structure on Si. ► Cladding layers are proposed for a pseudomorphic laser structure on Si. ► The AlGaP alloy is studied by X-ray diffraction and spectroscopic ellipsometry. ► InGaAs/GaP quantum dots are studied by scanning tunnelling microscopy. ► InGaAs/GaP quantum dots are studied by time-resolved photoluminescence.

  15. Photoluminescence studies of single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1999-01-01

    Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

  16. Lateral surface superlattices in strained InGaAs layers

    International Nuclear Information System (INIS)

    Milton, B.

    2000-08-01

    Lateral Surface Superlattices were fabricated by etching in strained InGaAs layers above a GaAs/AlGaAs 2DEG channel. These were etched both by dry plasma wet chemical etching to produce periods of 100nm, 200nm and 300nm. These superlattices were fabricated on Hall bars to allow four terminal measurement and a blanket gate was placed on top, to allow variations in the carrier concentration. The magnetoresistance effects of these superlattices were studied at varying values of gate voltage, which varies the carrier concentration and the electrostatic periodic potential and at temperatures down to 45mK in a dilution refrigerator. From the oscillations observed in the magnetoresistance trace's it is possible to calculate the magnitude of the periodic potential. This showed that the etched, strained InGaAs was producing an anisotropic piezoelectric potential, along with an isotropic electrostatic potential. The variation in period allowed a study of the change of this piezoelectric potential with the period as well as a study of the interactions between the electrostatic and piezoelectric potentials. Further, at the lowest temperatures a strong interaction was observed between the Commensurability Oscillations, caused by the periodic potential, and the Shubnikov-de Haas Oscillations due to the Landau. Levels. This interaction was studied as it varied with temperature and carrier concentration. (author)

  17. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  18. Low dark current InGaAs detector arrays for night vision and astronomy

    Science.gov (United States)

    MacDougal, Michael; Geske, Jon; Wang, Chad; Liao, Shirong; Getty, Jonathan; Holmes, Alan

    2009-05-01

    Aerius Photonics has developed large InGaAs arrays (1K x 1K and greater) with low dark currents for use in night vision applications in the SWIR regime. Aerius will present results of experiments to reduce the dark current density of their InGaAs detector arrays. By varying device designs and passivations, Aerius has achieved a dark current density below 1.0 nA/cm2 at 280K on small-pixel, detector arrays. Data is shown for both test structures and focal plane arrays. In addition, data from cryogenically cooled InGaAs arrays will be shown for astronomy applications.

  19. Off state breakdown behavior of AlGaAs / InGaAs field plate pHEMTs

    International Nuclear Information System (INIS)

    Palma, John; Mil'shtein, Samson

    2014-01-01

    Off-state breakdown voltage, V br , is an important parameter determining the maximum power output of microwave Field Effect Transistors (FETs). In recent years, the use of field plates has been widely adopted to significantly increase V br . This important technological development has extended FET technologies into new areas requiring these higher voltages and power levels. Keeping with this goal, field plates were added to an existing AlGaAs / InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) process with the aim of determining the off-state breakdown mechanism and the dependency of V br on the field plate design. To find the mechanism responsible for breakdown, temperature dependent off-state breakdown measurements were conducted. It was found that at low current levels, the temperature dependence indicates thermionic field emission at the Schottky gate and at higher current levels, impact ionization is indicated. The combined results imply that impact ionization is ultimately the mechanism that is responsible for the breakdown in the tested transistors, but that it is preceded by thermionic field emission from the gate. To test the dependence of V br upon the field plate design, the field plate length and the etch depth through the highly-doped cap layer under the field plate were varied. Also, non-field plate devices were tested along side field plate transistors. It was found that the length of the etched region under the field plate is the dominant factor in determining the off-state breakdown of the more deeply etched devices. For less deeply etched devices, the length of the field plate is more influential. The influence of surface states between the highly doped cap layer and the passivation layer along the recess are believed to have a significant influence in the case of the more deeply etched examples. It is believed that these traps spread the electric field, thus raising the breakdown voltage. Three terminal breakdown voltages

  20. Exciton dephasing in single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance. In self-assembled quantum dot systems, a strong inhomogeneous broadening due to dot size fluctuations masks the homogeneous linewidth associated with transitions between individual states....... The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due...... to fast dephasing. We present an investigation of the low-temperature homogeneous linewidth of individual PL lines from MBE-grown In0.5Ga0.5As/GaAs quantum dots....

  1. One-pot pseudomorphic crystallization of mesoporous porous silica to hierarchical porous zeolites

    Energy Technology Data Exchange (ETDEWEB)

    Xing, Jun-Ling; Jiang, Shu-Hua; Pang, Jun-Ling; Yuan, En-Hui; Ma, Xiao-Jing [Shanghai Key Laboratory of Green Chemistry and Chemical Processes, College of Chemistry and Molecular Engineering, East China Normal University, No. 3663 Zhongshan North Road, 200062 Shanghai (China); Lam, Koon-Fung [Department of Chemical Engineering, University College London, Torrington Place, London (United Kingdom); Xue, Qing-Song, E-mail: qsxue@chem.ecnu.edu.cn [Shanghai Key Laboratory of Green Chemistry and Chemical Processes, College of Chemistry and Molecular Engineering, East China Normal University, No. 3663 Zhongshan North Road, 200062 Shanghai (China); Zhang, Kun, E-mail: kzhang@chem.ecnu.edu.cn [Shanghai Key Laboratory of Green Chemistry and Chemical Processes, College of Chemistry and Molecular Engineering, East China Normal University, No. 3663 Zhongshan North Road, 200062 Shanghai (China)

    2015-09-15

    Hierarchically porous silica with mesopore and zeolitic micropore was synthesized via pseudomorphic crystallization under high-temperature hydrothermal treatment in the presence of cetyltrimethylammonium tosylate and tetrapropylammonium ions. A combined characterization using small-angle X-ray diffraction (XRD), nitrogen adsorption, high-resolution transmission electron microscopy (TEM), thermogravimetric analysis (TG), and elemental analysis showed that dual templates, CTA{sup +} and TPA{sup +} molecules, can work in a cooperative manner to synthesize mesoporous zeolite in a one-pot system by precisely tuning the reaction conditions, such as reaction time and temperature, and type and amount of heterometal atoms. It is found that the presence of Ti precursor is critical to the successful synthesis of such nanostructure. It not only retards the nucleation and growth of crystalline MFI domains, but also acts as nano-binder or nano-glue to favor the assembly of zeolite nanoblocks. - Graphical abstract: Display Omitted - Highlights: • A facile method to synthesize mesoporous zeolites with hierarchical porosity was presented. • It gives a new insight into keeping the balance between mesoscopic and molecular ordering in hierarchical porous materials. • A new understanding on the solid–solid transformation mechanism for the synthesis of titanosilicate zeolites was proposed.

  2. Millimeter-wave pseudomorphic HEMT MMIC phased array components for space communications

    Science.gov (United States)

    Lan, G. L.; Pao, C. K.; Wu, C. S.; Mandolia, G.; Hu, M.; Yuan, S.; Leonard, Regis

    1991-01-01

    Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.

  3. Ikaite pseudomorphs in the Zaire deep-sea fan: An intermediate between calcite and porous calcite

    Science.gov (United States)

    Jansen, J. H. F.; Woensdregt, C. F.; Kooistra, M. J.; van der Gaast, S. J.

    1987-03-01

    Translucent brown aggregates of calcium-carbonate crystals have been found in cores from the Zaire deep-sea fan (west equatorial Africa). The aggregates are well preserved but very friable. Upon storage they become yellowish white and cloudy and release water. Chemical, mineralogical (XRD), petrographical, crystal-morphological, and stable-isotope data demonstrate that the crystals have passed through three phases: (1) an authigenic carbonate phase, probably calcium carbonate, which is represented by the external habit of the present crystals; (2) a translucent brown ikaite phase (CaCO3·6H2O), unstable at temperatures above 5 °C; and (3) a phase consisting of calcite microcrystals that are poorly cemented and form a porous mass within the crystal form of the morphologically unchanged first phase. The transformation from the first phase into ikaite was probably a kinetic replacement. The transformation from ikaite into the third phase occurred because of storage at room temperature. The presence of ikaite is indicative of a low-temperature, anaerobic, organic-carbon-rich marine environment. Ikaite is probably the precursor of a great number of porous calcite pseudomorphs, and possibly also of many marine authigenic microcrystalline carbonate nodules.

  4. Imaging surface plasmon polaritons using proximal self-assembled InGaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Bracher, Gregor; Schraml, Konrad; Blauth, Mäx; Wierzbowski, Jakob; López, Nicolás Coca; Bichler, Max; Müller, Kai; Finley, Jonathan J.; Kaniber, Michael, E-mail: Michael.Kaniber@wsi.tum.de [Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany and Nanosystems Initiative Munich, Schellingstraße 4, 80799 München (Germany)

    2014-07-21

    We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiative processes do not play a major role for separations down to ∼10 nm. A polarized laser beam focused on one end of the plasmonic nanostructure generates propagating surface plasmon polaritons that, in turn, create electron-hole pairs in the GaAs substrate during propagation. These free carriers are subsequently captured by the quantum dots ∼25 nm below the surface, giving rise to luminescence. The intensity of the spectrally integrated quantum dot luminescence is used to image the propagating plasmon modes. As the waveguide width reduces from 5 μm to 1 μm, we clearly observe different plasmonic modes at the remote waveguide end, enabling their direct imaging in real space. This imaging technique is applied to a plasmonic beamsplitter facilitating the determination of the splitting ratio between the two beamsplitter output ports as the interaction length L{sub i} is varied. A splitting ratio of 50:50 is observed for L{sub i}∼9±1 μm and 1 μm wide waveguides for excitation energies close to the GaAs band edge. Our experimental findings are in good agreement with mode profile and finite difference time domain simulations for both waveguides and beamsplitters.

  5. Formation of columnar (In,Ga)As quantum dots on GaAs(100)

    International Nuclear Information System (INIS)

    He, J.; Noetzel, R.; Offermans, P.; Koenraad, P.M.; Gong, Q.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced

  6. Thermal instability and the growth of the InGaAs/AlGaAs pseudomorphic high electron mobility transistor system

    International Nuclear Information System (INIS)

    Pellegrino, Joseph G.; Qadri, Syed B.; Mahadik, Nadeemullah A.; Rao, Mulpuri V.; Tseng, Wen F.; Thurber, Robert; Gajewski, Donald; Guyer, Jonathan

    2007-01-01

    The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC)-controlled, growth scheme is compared. Several advantages of the DRS-grown pHEMTs over the TC-controlled version were observed. Modest improvements in mobility, on the order of 2%-3%, were observed in addition to a 20% reduction in carrier freeze-out for the DRS-grown pHEMTs at 77 K

  7. Metatitanic acid pseudomorphs after titanyl sulfates: nanostructured sorbents and precursors for crystalline titania with desired particle size and shape

    Czech Academy of Sciences Publication Activity Database

    Klementová, Mariana; Motlochová, Monika; Boháček, Jaroslav; Kupčík, Jaroslav; Palatinus, Lukáš; Pližingrová, Eva; Szatmáry, L.; Šubrt, Jan

    2017-01-01

    Roč. 17, č. 12 (2017), s. 6762-6769 ISSN 1528-7483 R&D Projects: GA TA ČR(CZ) TH02020110; GA MŠk(CZ) LM2015073 Institutional support: RVO:61388980 ; RVO:68378271 Keywords : metatitanic acid * titania * pseudomorph * titanyl sulfate dihydrate structure * morphology control * sorption * radionuclides Subject RIV: CA - Inorganic Chemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) OBOR OECD: Inorganic and nuclear chemistry; Condensed matter physics (including formerly solid state physics, supercond.) (FZU-D) Impact factor: 4.055, year: 2016

  8. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

    International Nuclear Information System (INIS)

    Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

    2010-01-01

    Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

  9. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

    Science.gov (United States)

    Grandusky, James R.; Chen, Jianfeng; Gibb, Shawn R.; Mendrick, Mark C.; Moe, Craig G.; Rodak, Lee; Garrett, Gregory A.; Wraback, Michael; Schowalter, Leo J.

    2013-03-01

    In this letter, the achievement of over 60 mW output power from pseudomorphic ultraviolet light-emitting diodes in continuous wave operation is reported. Die thinning and encapsulation improved the photon extraction efficiency to over 15%. Improved thermal management and a high characteristic temperature resulted in a low thermal rolloff up to 300 mA injection current with an output power of 67 mW, an external quantum efficiency (EQE) of 4.9%, and a wall plug efficiency (WPE) of 2.5% for a single-chip device emitting at 271 nm in continuous wave operation.

  10. Widely Tunable High-Power Tapered Diode Laser at 1060 nm

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Sumpf, Bernd; Erbert, Götz

    2011-01-01

    We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser...... operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range....

  11. Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Dimitrakopulos, G.P.; Bazioti, C.; Grym, Jan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Pacherová, Oliva; Komninou, Ph.

    2014-01-01

    Roč. 306, Jul (2014), s. 89-93 ISSN 0169-4332 R&D Projects: GA MŠk 7AMB12GR034 Institutional support: RVO:68378271 ; RVO:67985882 Keywords : compound semiconductors * InGaAs * porous substrate * misfit dislocations * strain Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.711, year: 2014

  12. Spin injection from Co2MnGa into an InGaAs quantum well

    DEFF Research Database (Denmark)

    Hickey, M. C.; Damsgaard, Christian Danvad; Holmes, S. N.

    2008-01-01

    We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifet...

  13. Extended wavelength InGaAs SWIR FPAs with high performance

    Science.gov (United States)

    Li, Xue; Li, Tao; Yu, Chunlei; Tang, Hengjing; Deng, Shuangyan; Shao, Xiumei; Zhang, Yonggang; Gong, Haimei

    2017-09-01

    The extended InGaAs short wavelength infrared (SWIR) detector covers 1.0-2.5 μm wavelength, which plays an important role in weather forecast, resource observation, low light level systems, and astronomical observation and so on. In order to fabricate the high performance extended InGaAs detector, materials structure and parameters were characterized with Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM), the spreading of minority carriers and lattice quality were obtained. Mesa etching process, etching damage restoration technique and low temperature passivation technique were used in the fabrication of the extended InGaAs detector. The improvement of material structure and device process was studied by fabricating and measuring different perimeter-to-area (P/A) photodiodes and singledevice, respectively. The dark current density of the extended InGaAs detector obviously was reduced, about 2 nA/cm2 at 170 K. The 512×256 FPAs were fabricated, the peak detectivity and the quantum efficiency of which are 5×1011 cmHz1/2/W and 80%, respectively. The staring image yielded of the 512×256 FPAs is shown, which demonstrates very good imaging quality.

  14. Atomic-scale structure and formation of self-assembled In(Ga)As quantum rings

    NARCIS (Netherlands)

    Offermans, P.; Koenraad, P.M.; Wolter, J.H.; Granados, D.; Garcia, J.M.; Fomin, V.; Gladilin, V.N.; Devreese, J.T.

    2006-01-01

    The authors present an at.-scale anal. of the In distribution of self-assembled (In,Ga)As quantum rings (QRs), which are formed from InAs quantum dots by capping with a thin layer of GaAs and subsequent annealing. The size and shape of QRs as obsd. by cross-sectional scanning tunneling microscopy

  15. Thermal stability studies on atomically clean and sulphur passivated InGaAs surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Lalit; Hughes, Greg [School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9 (Ireland)

    2013-03-15

    High resolution synchrotron radiation core level photoemission measurements have been used to study the high temperature stability of sulphur passivated InGaAs surfaces and comparisons made with atomically clean surfaces subjected to the same annealing temperatures. Sulphur passivation of clean InGaAs surfaces prepared by the thermal removal of an arsenic capping layer was carried out using an in situ molecular sulphur treatment in ultra high vacuum. The elemental composition of the surfaces of these materials was measured at a series of annealing temperatures up to 530 C. Following a 480 C anneal In:Ga ratio was found to have dropped by 33% on sulphur passivated surface indicating a significant loss of indium, while no drop in indium signal was recorded at this temperature on the atomically InGaAs surface. No significant change in the As surface concentration was measured at this temperature. These results reflect the reduced thermal stability of the sulphur passivated InGaAs compared to the atomically clean surface which has implications for device fabrication. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Schneider, C.; Stobbe, Søren

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  17. Theoretical analysis of hydrogen chemisorption on Pd(111), Re(0001) and PdML/Re(0001), ReML/Pd(111) pseudomorphic overlayers

    DEFF Research Database (Denmark)

    Pallassana, Venkataraman; Neurock, Matthew; Hansen, Lars Bruno

    1999-01-01

    not appear to provide an independent parameter for assessing surface reactivity. The weak chemisorption of hydrogen on the Pd-ML/Re(0001) surface relates to substantial lowering of the d-band center of Pd, when it is pseudomorphically deposited as a monolayer on a Re substrate. [S0163-1829(99)00331-2].......Gradient-corrected density-functional theory (DFT-GGA) periodic slab calculations have been used to analyze the binding of atomic hydrogen on monometallic Pd(111), Re(0001), and bimetallic Pd-mL/Re(0001) [pseudomorphic monolayer of Pd(111) on Re(0001)] and Re-ML/Pd(111) surfaces. The computed...

  18. Temperature Effects on The Electrical Characteristics of In0.15Ga0.85As Pseudomorphic High-Electron-Mobility Transistors

    Directory of Open Access Journals (Sweden)

    BECHLAGHEM Fatima Zohra

    2017-10-01

    Full Text Available Nowadays, GaAs-based HEMTs and pseudomorphic HEMTs are speedily replacing conventional MESFET technology in military and commercial applications including, communication, radar and automotive technologies having need of high gain, and low noise figures especially at millimeter-wave frequencies. In this work, a short gate length pseudomorphic HEMT "p-HEMT" on GaAs substrate is treated. As temperature dependence study is a very important part of the complete characterization on active devices, the impact of temperature variation on the electrical properties of our 30nm short gate length pseudomorphic high-electron mobility In0.15Ga0.85As device is investigated. All our static DC device characteristics and RF response have been obtained using a device simulator that is Silvaco software to examine temperature impact on our device output current, transconductance and cutoff frequency. The 30nm gate pseudomorphic HEMT reported here exhibit superior DC and RF performances, Our results reveals a maximum drain-source current IDS up to 537.16 mA/mm, a peak extrinsic transconductance Gm of 345.4 mS/mm, a cutoff frequency Ft of 285.9 GHz, and a maximum frequency Fmax of 1580 GHz at room temperature.

  19. From structure to spectra. Tight-binding theory of InGaAs quantum dots

    International Nuclear Information System (INIS)

    Goldmann, Elias

    2014-01-01

    demonstrates the applicability of InGaAs quantum dots for quantum telecommunication at the desired telecom wavelengths, offering good growth controllability. For the application in lasers, quantum based active media are known to offer superior properties to common quantum well lasers such as low threshold currents or temperature stability. For device design, the knowledge about the saturation behaviour of optical gain with excitation density is of major importance. In the present work we combine quantum-kinetic models for the calculation of the optical gain of quantum dot active media with our atomistic tight-binding model for the calculation of single-particle energies and wave functions. We investigate the interplay between structural properties of the quantum dots and many-body effects in the optical gain spectra and identify different regimes of saturation behaviour. Either phase-space filling dominates the excitation dependence of the optical gain, leading to saturation, or excitation-induced dephasing dominates the excitation dependence of the optical gain, resulting in a negative differential gain.

  20. From structure to spectra. Tight-binding theory of InGaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Goldmann, Elias

    2014-07-23

    counterintuitively. Our result demonstrates the applicability of InGaAs quantum dots for quantum telecommunication at the desired telecom wavelengths, offering good growth controllability. For the application in lasers, quantum based active media are known to offer superior properties to common quantum well lasers such as low threshold currents or temperature stability. For device design, the knowledge about the saturation behaviour of optical gain with excitation density is of major importance. In the present work we combine quantum-kinetic models for the calculation of the optical gain of quantum dot active media with our atomistic tight-binding model for the calculation of single-particle energies and wave functions. We investigate the interplay between structural properties of the quantum dots and many-body effects in the optical gain spectra and identify different regimes of saturation behaviour. Either phase-space filling dominates the excitation dependence of the optical gain, leading to saturation, or excitation-induced dephasing dominates the excitation dependence of the optical gain, resulting in a negative differential gain.

  1. Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

    International Nuclear Information System (INIS)

    Xi Xiao-Wen; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Fan Qing-Yang; Shi Chun-Lei

    2016-01-01

    An electromagnetic pulse (EMP)-induced damage model based on the internal damage mechanism of the GaAs pseudomorphic high electron mobility transistor (PHEMT) is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level. (paper)

  2. Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

    CERN Document Server

    Vdovin, V I; Rzaev, M M; Burbaev, T M

    2002-01-01

    A multilayer GaAs/SiGe/Si heterostructure with InGaAs quantum dots (QDs) embedded in a GaAs layer was grown by molecular beam epitaxy (MBE) on a Si(001) substrate. A step-graded Si sub 1 sub - sub x Ge sub x (0 <= x <= 1) buffer layer and a GaAs layer with In sub y Ga sub 1 sub sub - sub y As (y approx 0.5) QDs were deposited consecutively in two different MBE systems. The heterostructure exhibits intense photoluminescence in the region of 1.3 mu m at room temperature. Perfect crystal InGaAs islands with height less than 10 nm are the sources of this radiation.

  3. Cleaved-edge overgrowth of aligned quantum dots on strained layers of InGaAs

    International Nuclear Information System (INIS)

    Wasserman, D.; Lyon, S.A.

    2004-01-01

    Strain aligned InAs quantum dots were grown on the cleaved edges of first growth samples containing strained In x Ga (1-x) As layers of varying thickness and indium fraction. The formation of the cleaved-edge quantum dots was observed by means of atomic force microscopy. 100% linear alignment of InAs quantum dots over the InGaAs strain layers of the first growth sample is demonstrated. Linear density of the aligned dots was found to depend on the properties of the underlying InGaAs strain layers. Vertical alignment of an additional InAs quantum dot layer over the buried, linearly aligned, initial dot layer was observed for thin GaAs spacer layers

  4. InAs migration on released, wrinkled InGaAs membranes used as virtual substrate

    International Nuclear Information System (INIS)

    Filipe Covre da Silva, S; Lanzoni, E M; De Araujo Barboza, V; Deneke, Ch; Malachias, A; Kiravittaya, S

    2014-01-01

    Partly released, relaxed and wrinkled InGaAs membranes are used as virtual substrates for overgrowth with InAs. Such samples exhibit different lattice parameters for the unreleased epitaxial parts, the released flat, back-bond areas and the released wrinkled areas. A large InAs migration towards the released membrane is observed with a material accumulation on top of the freestanding wrinkles during overgrowth. A semi-quantitative analysis of the misfit strain shows that the material migrates to the areas of the sample with the lowest misfit strain, which we consider as the areas of the lowest chemical potential of the surface. Material migration is also observed for the edge-supported, freestanding InGaAs membranes found on these samples. Our results show that the released, wrinkled nanomembranes offer a growth template for InAs deposition that fundamentally changes the migration behavior of the deposited material on the growth surface. (paper)

  5. Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations

    OpenAIRE

    Kuznetsova, M. S.; Flisinski, K.; Gerlovin, I. Ya.; Ignatiev, I. V.; Kavokin, K. V.; Verbin, S. Yu.; Yakovlev, D. R.; Reuter, D.; Wieck, A. D.; Bayer, M.

    2013-01-01

    The role of nuclear spin fluctuations in the dynamic polarization of nuclear spins by electrons is investigated in (In,Ga)As quantum dots. The photoluminescence polarization under circularly polarized optical pumping in transverse magnetic fields (Hanle effect) is studied. A weak additional magnetic field parallel to the optical axis is used to control the efficiency of nuclear spin cooling and the sign of nuclear spin temperature. The shape of the Hanle curve is drastically modified with cha...

  6. Evaluation of InGaAS array detector suitability to space environment

    Science.gov (United States)

    Tauziede, L.; Beulé, K.; Boutillier, M.; Bernard, F.; Reverchon, J.-L.; Buffaz, A.

    2017-11-01

    InGaAs material has a natural cutoff wavelength of 1.65µm so it is naturally suitable for detection in Short Wavelength InfraRed (SWIR) spectral range. Regarding Earth Observation Spacecraft missions this spectral range can be used for the CO2 concentration measurements in the atmosphere. CNES (French Space agency) is studying a new mission, Microcarb with a spectral band centered on 1.6µm wavelength. InGaAs detector looks attractive for space application because its low dark current allows high temperature operation, reducing by the way the needed instrument resources. The Alcatel Thales III-VLab group has developed InGaAs arrays technology (320x256 & 640x512) that has been studied by CNES, using internal facilities. Performance tests and technological evaluation were performed on a 320x256 pixels array with a pitch of 30µm. The aim of this evaluation was to assess this new technology suitability for space applications. The carried out test plan includes proton radiations with Random Telegraph Signal (RTS) study, operating lifetest and evolution of performances as a function of the operating temperature.

  7. Life test of the InGaAs focal plane arrays detector for space applications

    Science.gov (United States)

    Zhu, Xian-Liang; Zhang, Hai-Yan; Li, Xue; Huang, Zhang-Cheng; Gong, Hai-Mei

    2017-08-01

    The short-wavelength infrared (SWIR) InGaAs focal plane array (FPA) detector consists of infrared detector chip, readout integrated circuit (ROIC), and flip-chip bonding interconnection by Indium bump. In order to satisfy space application requirements for failure rates or Mean Time to Failure (MTTF), which can only be demonstrated with the large number of detectors manufactured, the single pixel in InGaAs FPAs was chosen as the research object in this paper. The constant-stress accelerated life tests were carried out at 70°C 80°C 90°C and100°C. The failed pixels increased gradually during more than 14000 hours at each elevated temperatures. From the random failure data the activation energy was estimated to be 0.46eV, and the average lifetime of a single pixel in InGaAs FPAs was estimated to be longer than 1E+7h at the practical operating temperature (5°C).

  8. Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

    Science.gov (United States)

    Xiao-Wen, Xi; Chang-Chun, Chai; Gang, Zhao; Yin-Tang, Yang; Xin-Hai, Yu; Yang, Liu

    2016-04-01

    The damage effect and mechanism of the electromagnetic pulse (EMP) on the GaAs pseudomorphic high electron mobility transistor (PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results. Project supported by the National Basic Research Program of China (Grant No. 2014CB339900), and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

  9. Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

    Science.gov (United States)

    Ketterson, Andrew A.; Masselink, William T.; Gedymin, Jon S.; Klem, John; Peng, Chin-Kun

    1986-01-01

    High-performance pseudomorphic In(y)Ga(1-y)As/Al0.15-Ga0.85As y = 0.05-0.2 MODFET's grown by MBE have been characterized at dc (300 and 77 K) and RF frequencies. Transconductances as high 310 and 380 mS/mm and drain currents as high as 290 and 310 mA/mm were obtained at 300 and 77 K, respectively, for 1-micron gate lengths and 3-micron source-drain spacing devices. Lack of persistent trapping effects, I-V collapse, and threshold voltage shifts observed with these devices are attributed to the use of low mole fraction Al(x)Ga(1-x)As while still maintaining two-dimensional electron gas concentrations of about 1.3 x to the 12th per sq cm. Detailed microwave S-parameter measurements indicate a current gain cut-off frequency of 24.5 GHz when y = 0.20, which is as much as 100 percent better than similar GaAs/AlGaAs MODFET structures, and a maximum frequency of oscillation of 40 GHz.

  10. Growth and temperature dependent photoluminescence of InGaAs quantum dot chains

    International Nuclear Information System (INIS)

    Yang, Haeyeon; Kim, Dong-Jun; Colton, John S.; Park, Tyler; Meyer, David; Jones, Aaron M.; Thalman, Scott; Smith, Dallas; Clark, Ken; Brown, Steve

    2014-01-01

    Highlights: • We examine the optical properties of novel quantum dot chains. • Study shows that platelets evolve into quantum dots during heating of the InGaAs platelets encapsulated with GaAs. • Single stack of quantum dots emits light at room temperature. • Quantum dots are of high quality, confirmed by cross-section TEM images and photoluminescence. • Light emission at room temperature weakens beyond the detection limit when the quantum dots form above the critical annealing temperature. - Abstract: We report a study of growth and photoluminescence from a single stack of MBE-grown In 0.4 Ga 0.6 As quantum dot chains. The InGaAs epilayers were grown at a low temperature so that the resulting surfaces remain flat with platelets even though their thicknesses exceed the critical thickness of the conventional Stranski–Krastanov growth mode. The flat InGaAs layers were then annealed at elevated temperatures to induce the formation of quantum dot chains. A reflection high energy electron diffraction study suggests that, when the annealing temperature is at or below 480 °C, the surface of growth front remains flat during the periods of annealing and growth of a 10 nm thick GaAs capping layer. Surprisingly, transmission electron microscopy images do indicate the formation of quantum dot chains, however, so the dot-chains in those samples may form from precursory platelets during the period of temperature ramping and subsequent capping with GaAs due to intermixing of group III elements. The optical emission from the quantum dot layer demonstrates that there is a critical annealing temperature of 480–500 °C above which the properties of the low temperature growth approach are lost, as the optical properties begin to resemble those of quantum dots produced by the conventional Stranski–Krastanov technique

  11. InGaAs focal plane arrays for low-light-level SWIR imaging

    Science.gov (United States)

    MacDougal, Michael; Hood, Andrew; Geske, Jon; Wang, Jim; Patel, Falgun; Follman, David; Manzo, Juan; Getty, Jonathan

    2011-06-01

    Aerius Photonics will present their latest developments in large InGaAs focal plane arrays, which are used for low light level imaging in the short wavelength infrared (SWIR) regime. Aerius will present imaging in both 1280x1024 and 640x512 formats. Aerius will present characterization of the FPA including dark current measurements. Aerius will also show the results of development of SWIR FPAs for high temperaures, including imagery and dark current data. Finally, Aerius will show results of using the SWIR camera with Aerius' SWIR illuminators using VCSEL technology.

  12. Large-format InGaAs focal plane arrays for SWIR imaging

    Science.gov (United States)

    Hood, Andrew D.; MacDougal, Michael H.; Manzo, Juan; Follman, David; Geske, Jonathan C.

    2012-06-01

    FLIR Electro Optical Components will present our latest developments in large InGaAs focal plane arrays, which are used for low light level imaging in the short wavelength infrared (SWIR) regime. FLIR will present imaging from their latest small pitch (15 μm) focal plane arrays in VGA and High Definition (HD) formats. FLIR will present characterization of the FPA including dark current measurements as well as the use of correlated double sampling to reduce read noise. FLIR will show imagery as well as FPA-level characterization data.

  13. Active quenching circuit for a InGaAs single-photon avalanche diode

    International Nuclear Information System (INIS)

    Zheng Lixia; Wu Jin; Xi Shuiqing; Shi Longxing; Liu Siyang; Sun Weifeng

    2014-01-01

    We present a novel gated operation active quenching circuit (AQC). In order to simulate the quenching circuit a complete SPICE model of a InGaAs SPAD is set up according to the I–V characteristic measurement results of the detector. The circuit integrated with aROIC (readout integrated circuit) is fabricated in an CSMC 0.5 μm CMOS process and then hybrid packed with the detector. Chip measurement results show that the functionality of the circuit is correct and the performance is suitable for practical system applications. (semiconductor integrated circuits)

  14. Lasers

    CERN Document Server

    Milonni, Peter W

    1988-01-01

    A comprehensive introduction to the operating principles and applications of lasers. Explains basic principles, including the necessary elements of classical and quantum physics. Provides concise discussions of various laser types including gas, solid state, semiconductor, and free electron lasers, as well as of laser resonators, diffraction, optical coherence, and many applications including holography, phase conjugation, wave mixing, and nonlinear optics. Incorporates many intuitive explanations and practical examples. Discussions are self-contained in a consistent notation and in a style that should appeal to physicists, chemists, optical scientists and engineers.

  15. Noise characteristics analysis of short wave infrared InGaAs focal plane arrays

    Science.gov (United States)

    Yu, Chunlei; Li, Xue; Yang, Bo; Huang, Songlei; Shao, Xiumei; Zhang, Yaguang; Gong, Haimei

    2017-09-01

    The increasing application of InGaAs short wave infrared (SWIR) focal plane arrays (FPAs) in low light level imaging requires ultra-low noise FPAs. This paper presents the theoretical analysis of FPA noise, and point out that both dark current and detector capacitance strongly affect the FPA noise. The impact of dark current and detector capacitance on FPA noise is compared in different situations. In order to obtain low noise performance FPAs, the demand for reducing detector capacitance is higher especially when pixel pitch is smaller, integration time is shorter, and integration capacitance is larger. Several InGaAs FPAs were measured and analyzed, the experiments' results could be well fitted to the calculated results. The study found that the major contributor of FPA noise is coupled noise with shorter integration time. The influence of detector capacitance on FPA noise is more significant than that of dark current. To investigate the effect of detector performance on FPA noise, two kinds of photodiodes with different concentration of the absorption layer were fabricated. The detectors' performance and noise characteristics were measured and analyzed, the results are consistent with that of theoretical analysis.

  16. Modeling and optimization of InGaAs infrared photovoltaic detectors

    CERN Document Server

    Piotrowski, J; Reginski, K

    2000-01-01

    The performance of In sub x Ga sub 1 sub - sub x As detectors operating in the 2-3.4 mu m spectral range and temperature of 300 K has been analyzed theoretically as a function of wavelength, band gap and doping level with special emphasis on 2-2.5 mu m and 3-3.5 mu m atmospheric window devices. The calculations show that the dominant generation-recombination mechanism in p-type, intrinsic and in a lightly doped n-type InGaAs is the spin split-off band Auger process (AS). Since the AS generation increases with the square of the hole concentration, the minimum thermal generation and the best performance can be obtained using moderately doped n-type material as the absorber region of a photovoltaic device. In principle, the ultimate performance can be achieved in the optimized homojunction devices with relatively thick n-type absorber region forming n-p junction with a thin p-type material. N-type doping of absorber region of InGaAs photodiodes at 300 K changes from 1x10 sup 1 sup 4 to 5.2x10 sup 1 sup 5 cm sup ...

  17. Low frequency noise and electrical transport properties of pseudomorphic Si/Si1-xGex heterostructures

    International Nuclear Information System (INIS)

    Prest, Martin James

    2001-01-01

    Growth of high germanium content (x=0.44) pseudomorphic Si/Si 1-x Ge x structures at low temperature, followed by a high temperature anneal, was optimised for low temperature mobility. The optimum was found for growth at 380 deg C with an ex-situ anneal at 800 deg C which gave a 10K mobility of 1030cm 2 V -1 s -1 with a sheet density of 1.2x10 12 cm -2 . A sample grown at 380 deg C with an in-situ anneal at 800 deg C gave an even higher 10K mobility of 1985cm 2 V -1 s -1 with a sheet density of 1.0x10 12 cm -2 . Chemical etching was used to fully deplete the dopant supply layer so that a room temperature Hall mobility of 255cm 2 V -1 s -1 was measured. Variation of the Hall coefficient was used to determine the room temperature Hall scattering factor as 0.58 which gave a Drift mobility of 440cm 2 V -1 s -1 (about twice that of a conventional Si pMOS device at the same vertical electric field). Pseudomorphic Si/Si 1-x Ge x pMOSFETs (x=0.36) with Si cap thicknesses of 2, 5 and 8nm were also investigated. Inversion charge extracted from CV measurements was used to determine the room temperature effective mobility. A peak mobility of 220cm 2 V -1 s -1 was determined for a 5nm cap sample which was about twice that of the Si control. Interface trap densities from CV were found to increase with reduction of Si cap thickness. The deterioration in interface quality correlated with a reduction in peak mobility. Although the thickest cap sample had the highest peak mobility, mobility degradation with increased vertical field was rapid due to the early onset of parallel conduction in the Si cap. Mobility calculations were fitted to low temperature Hall measurements which provided a theoretical model of the mobility degradation. Scattering by oxide impurities was shown to decrease carrier mobility with an increased effect for thinner caps. For the thinnest cap sample an increase in interface impurities and hetero-interface roughness was required to explain the observed results

  18. Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

    Science.gov (United States)

    Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

    2015-12-01

    The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

  19. Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

    NARCIS (Netherlands)

    Offermans, P.; Koenraad, P.M.; Wolter, J.H.; Granados, D.; Garcia, J.M.; Fomin, V.; Gladilin, V.N.; Devreese, J.T.

    2005-01-01

    We present an atomic-scale analysis of the indium distribution of self-assembled In(Ga)As quantum rings (QRs) which are formed from InAs quantum dots by capping with a thin layer of GaAs and subsequent annealing. We find that the size and shape of QRs as observed by cross-sectional scanning

  20. Gain dynamics in p-doped InGaAs quantum dot amplifiers from room to cryogenic temperatures

    NARCIS (Netherlands)

    Borri, P.; Cesaria, V.; Rossetti, M.; Fiore, A.; Langbein, W.

    2009-01-01

    We have compared the gain dynamics of the ground state excitonic transition between undoped and p-doped electrically-pumped InGaAs quantum-dot optical amplifiers, for temperatures from 300K to 20K. A pump-probe differential transmission technique in heterodyne detection with sub-picosecond time

  1. Optical Cutting Interruption Sensor for Fiber Lasers

    Directory of Open Access Journals (Sweden)

    Benedikt Adelmann

    2015-09-01

    Full Text Available We report on an optical sensor system attached to a 4 kW fiber laser cutting machine to detect cutting interruptions. The sensor records the thermal radiation from the process zone with a modified ring mirror and optical filter arrangement, which is placed between the cutting head and the collimator. The process radiation is sensed by a Si and InGaAs diode combination with the detected signals being digitalized with 20 kHz. To demonstrate the function of the sensor, signals arising during fusion cutting of 1 mm stainless steel and mild steel with and without cutting interruptions are evaluated and typical signatures derived. In the recorded signals the piercing process, the laser switch on and switch off point and waiting period are clearly resolved. To identify the cutting interruption, the signals of both Si and InGaAs diodes are high pass filtered and the signal fluctuation ranges being subsequently calculated. Introducing a correction factor, we identify that only in case of a cutting interruption the fluctuation range of the Si diode exceeds the InGaAs diode. This characteristic signature was successfully used to detect 80 cutting interruptions of 83 incomplete cuts (alpha error 3.6% and system recorded no cutting interruption from 110 faultless cuts (beta error of 0. This particularly high detection rate in combination with the easy integration of the sensor, highlight its potential for cutting interruption detection in industrial applications.

  2. Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

    Energy Technology Data Exchange (ETDEWEB)

    Mukhtarova, Anna; Valdueza-Felip, Sirona; Redaelli, Luca; Durand, Christophe; Monroy, Eva; Eymery, Joël, E-mail: joel.eymery@cea.fr [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS group “Nanophysique et semiconducteurs”, CEA-INAC-PHELIQS, 17 av. des Martyrs, 38054 Grenoble (France); Bougerol, Catherine [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS group “Nanophysique et semiconducteurs”, Institut Néel-CNRS, 25 av. des Martyrs, 38042 Grenoble (France)

    2016-04-18

    We investigate the photovoltaic performance of pseudomorphic In{sub 0.1}Ga{sub 0.9}N/GaN multiple-quantum well (MQW) solar cells as a function of the total active region thickness. An increase in the number of wells from 5 to 40 improves the short-circuit current and the open-circuit voltage, resulting in a 10-fold enhancement of the overall conversion efficiency. Further increasing the number of wells leads to carrier collection losses due to an incomplete depletion of the active region. Capacitance-voltage measurements point to a hole diffusion length of 48 nm in the MQW region.

  3. Composition Related Electrical Active Defect States of InGaAs and GaAsN

    Directory of Open Access Journals (Sweden)

    Arpad Kosa

    2017-01-01

    Full Text Available This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition dependent impurities and the investigation of their possible origins. For this purpose a widely utilized spectroscopy method, Deep Level Transient Fourier Spectroscopy, was utilized. The most significant responses of each sample labelled as InG2, InG3 and NG1, NG2 were discussed in detail and confirmed by simulations and literature data. The presence of a possible dual conduction type and dual state defect complex, dependent on the In/N composition, is reported. Beneficial characteristics of specific indium and nitrogen concentrations capable of eliminating or reducing certain point defects and dislocations are stated.

  4. Negative differential resistance of InGaAs dual channel transistors

    International Nuclear Information System (INIS)

    Sugaya, T; Yamane, T; Hori, S; Komori, K; Yonei, K

    2006-01-01

    We demonstrate a new type of velocity modulation transistor (VMT) with an InGaAs dual channel structure fabricated on an InP (001) substrate. The dual channel structure consists of a high mobility 10 nm In 0.53 Ga 0.47 As quantum well, a 2 nm In 0.52 Al 0.48 As barrier layer, and a low mobility 1 nm In 0.26 Ga 0.74 As quantum well. The VMTs have a negative differential resistance (NDR) effect with a low source-drain voltage of 0.38 V. The NDR characteristics can be clearly seen in the temperature range of 50 to 220 K with a gate voltage of 5 V. The NDR mechanism is thought to be the carrier transfer from the high mobility to the low mobility channels. Three-terminal VMTs are favorable for applications to highfrequency, high-speed, and low-power consumption devices

  5. Anisotropic electro-optic effect on InGaAs quantum dot chain modulators.

    Science.gov (United States)

    Liu, Wei; Liang, Baolai; Huffaker, Diana; Fetterman, Harold

    2013-10-15

    We investigated the anisotropic electro-optic (EO) effect on InGaAs quantum dot (QD) chain modulators. The linear EO coefficients were determined as 24.3 pm/V (33.8 pm/V) along the [011] direction and 30.6 pm/V (40.3 pm/V) along the [011¯] direction at 1.55 μm (1.32 μm) operational wavelength. The corresponding half-wave voltages (Vπs) were measured to be 5.35 V (4.35 V) and 4.65 V (3.86 V) at 1.55 μm (1.32 μm) wavelength. This is the first report on the anisotropic EO effect on QD chain structures. These modulators have 3 dB bandwidths larger than 10 GHz.

  6. Nano-scale observations of interface between lichen and basaltic rock: Pseudomorphic growth of amorphous silica on augite

    Science.gov (United States)

    Tamura, T.; Kyono, A.; Kebukawa, Y.; Takagi, S.

    2017-12-01

    during metabolism, the amorphous silica multilayers observed at the interface were produced by mineral dissolution induced by the lichen, and formed as a pseudomorphic replacement of augite by amorphous silica.

  7. Vacuum packaging of InGaAs focal plane array with four-stage thermoelectric cooler

    Science.gov (United States)

    Mo, De-feng; Liu, Da-fu; Yang, Li-yi; Xu, Qin-fei; Li, Xue

    2013-09-01

    The InGaAs focal plane array (FPA) detectors, covering the near-infrared 1~2.4 μm wavelength range, have been developed for application in space-based spectroscopy of the Earth atmosphere. This paper shows an all-metal vacuum package design for area array InGaAs detector of 1024×64 pixels, and its architecture will be given. Four-stage thermoelectric cooler (TEC) is used to cool down the FPA chip. To acquire high heat dissipation for TEC's Joule-heat, tungsten copper (CuW80) and kovar (4J29) is used as motherboard and cavity material respectively which joined by brazing. The heat loss including conduction, convection and radiation is analyzed. Finite element model is established to analyze the temperature uniformity of the chip substrate which is made of aluminum nitride (AlN). The performance of The TEC with and without heat load in vacuum condition is tested. The results show that the heat load has little influence to current-voltage relationship of TEC. The temperature difference (ΔT) increases as the input current increases. A linear relationship exists between heat load and ΔT of the TEC. Theoretical analysis and calculation show that the heat loss of radiation and conduction is about 187 mW and 82 mW respectively. Considering the Joule-heat of readout circuit and the heat loss of radiation and conduction, the FPA for a 220 K operation at room temperature can be achieved. As the thickness of AlN chip substrate is thicker than 1 millimeter, the temperature difference can be less than 0.3 K.

  8. Subwavelength Gold Grating as Polarizers Integrated with InP-Based InGaAs Sensors.

    Science.gov (United States)

    Wang, Rui; Li, Tao; Shao, Xiumei; Li, Xue; Huang, Xiaqi; Shao, Jinhai; Chen, Yifang; Gong, Haimei

    2015-07-08

    There are currently growing needs for polarimetric imaging in infrared wavelengths for broad applications in bioscience, communications and agriculture, etc. Subwavelength metallic gratings are capable of separating transverse magnetic (TM) mode from transverse electric (TE) mode to form polarized light, offering a reliable approach for the detection in polarization way. This work aims to design and fabricate subwavelength gold gratings as polarizers for InP-based InGaAs sensors in 1.0-1.6 μm. The polarization capability of gold gratings on InP substrate with pitches in the range of 200-1200 nm (fixed duty cycle of 0.5) has been systematically studied by both theoretical modeling with a finite-difference time-domain (FDTD) simulator and spectral measurements. Gratings with 200 nm lines/space in 100-nm-thick gold have been fabricated by electron beam lithography (EBL). It was found that subwavelength gold gratings directly integrated on InP cannot be applied as good polarizers, because of the existence of SPP modes in the detection wavelengths. An effective solution has been found by sandwiching the Au/InP bilayer using a 200 nm SiO2 layer, leading to significant improvement in both TM transmission and extinction ratio. At 1.35 μm, the improvement factors are 8 and 10, respectively. Therefore, it is concluded that the Au/SiO2/InP trilayer should be a promising candidate of near-infrared polarizers for the InP-based InGaAs sensors.

  9. Compact blue laser devices based on nonlinear frequency upconversion

    International Nuclear Information System (INIS)

    Risk, W.P.

    1989-01-01

    This paper reports how miniature sources of coherent blue radiation can be produced by using nonlinear optical materials for frequency upconversion of the infrared radiation emitted by laser diodes. Direct upconversion of laser diode radiation is possible, but there are several advantages to using the diode laser to pump a solid-state laser which is then upconverted. In either case, the challenge is to find combinations of nonlinear materials and laser for efficient frequency upconversion. Several examples have been demonstrated. These include intracavity frequency doubling of a diode-pumped 946-nm Nd:YAG laser, intracavity frequency mixing of a 809-nm GaAlAs laser diode with a diode- pumped 1064-nm Nd:YAG laser, and direct frequency doubling of a 994-nm strained-layer InGaAs laser diode

  10. Growth and characterization of InGaAs based nanowire-heterostructures

    International Nuclear Information System (INIS)

    Treu, Julian Pascal

    2017-01-01

    In this thesis we investigate III-V semiconductor nanowires integrated on silicon. Focusing on InGaAs-based heterostructures, we use molecular beam epitaxy (MBE) to obtain high purity material without the use of foreign metal catalysts such as gold. Instead of catalystassisted growth we use selective-area growth using prepatterned SiO 2 /Si(111) substrates prepared by improved nanoimprint lithography, resulting in highly periodic large scale arrays (1 x 1 cm 2 ) of vertically aligned nanowires with hexagonal cross-section. Studying the influence of the main growth parameter substrate temperature, arsenic- and III-material flux we systematically optimize yield and aspect ratio of InAs nanowires for different spacings. Capitalizing on the superior morphological homogeneity of arrays with more than 90% yield, we study their use as efficient surface emitters in the Terahertz regime and find excellent performance, clearly outperforming state-of the art bulk material, when taking the surface coverage into account. Furthermore, we explore nanowires with strongly reduced diameter, where adapted growth conditions result in dimensions as small as 20 nm, well within a quantum confined regime. Starting from optimized high-temperature InAs growth, we further investigate incorporation of gallium for composition tuned ternary InGaAs structures. Delineating the optimized growth parameter space we are able to address nearly the entire compositional range up to more than 80% Ga. Correlating X-ray diffraction, transmission electron microscopy (TEM) and micro-photoluminescence spectroscopy, we find a characteristic transition in crystal structure from wurtzite to zincblende dominated phase for intermediate Ga-content, a regime with luminescence mainly limited by compositional inhomogeneities, while structural defects prevail according linewidths of In- and Ga-rich samples. Furthermore, this successfully demonstrates position-controlled integration of InGaAs nanowires with composition

  11. InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

    Science.gov (United States)

    Bru-Chevallier, C; El Akra, A; Pelloux-Gervais, D; Dumont, H; Canut, B; Chauvin, N; Regreny, P; Gendry, M; Patriarche, G; Jancu, J M; Even, J; Noe, P; Calvo, V; Salem, B

    2011-10-01

    The aim of this study is to achieve homogeneous, high density and dislocation free InGaAs quantum dots grown by molecular beam epitaxy for light emission on silicon substrates. This work is part of a project which aims at overcoming the severe limitation suffered by silicon regarding its optoelectronic applications, especially efficient light emission device. For this study, one of the key points is to overcome the expected type II InGaAs/Si interface by inserting the InGaAs quantum dots inside a thin silicon quantum well in SiO2 fabricated on a SOI substrate. Confinement effects of the Si/SiO2 quantum well are expected to heighten the indirect silicon bandgap and then give rise to a type I interface with the InGaAs quantum dots. Band structure and optical properties are modeled within the tight binding approximation: direct energy bandgap is demonstrated in SiO2/Si/InAs/Si/SiO2 heterostructures for very thin Si layers and absorption coefficient is calculated. Thinned SOI substrates are successfully prepared using successive etching process resulting in a 2 nm-thick Si layer on top of silica. Another key point to get light emission from InGaAs quantum dots is to avoid any dislocations or defects in the quantum dots. We investigate the quantum dot size distribution, density and structural quality at different V/III beam equivalent pressure ratios, different growth temperatures and as a function of the amount of deposited material. This study was performed for InGaAs quantum dots grown on Si(001) substrates. The capping of InGaAs quantum dots by a silicon epilayer is performed in order to get efficient photoluminescence emission from quantum dots. Scanning transmission electronic microscopy images are used to study the structural quality of the quantum dots. Dislocation free In50Ga50As QDs are successfully obtained on a (001) silicon substrate. The analysis of QDs capped with silicon by Rutherford Backscattering Spectrometry in a channeling geometry is also presented.

  12. Pseudomorphic growth mode of Pb on the Al{sub 13}Fe{sub 4}(0 1 0) approximant surface

    Energy Technology Data Exchange (ETDEWEB)

    Ledieu, J., E-mail: Julian.ledieu@univ-lorraine.fr [Institut Jean Lamour (UMR 7198 CNRS-Université de Lorraine), Parc de Saurupt, CS50840, 54011 Nancy Cedex (France); Weerd, M.-C de [Institut Jean Lamour (UMR 7198 CNRS-Université de Lorraine), Parc de Saurupt, CS50840, 54011 Nancy Cedex (France); Hahne, M.; Gille, P. [Department of Earth and Environmental Sciences, Crystallography Section, Ludwig-Maximilians-Universität München, Theresienstr. 41, D-80333 München (Germany); Fournée, V. [Institut Jean Lamour (UMR 7198 CNRS-Université de Lorraine), Parc de Saurupt, CS50840, 54011 Nancy Cedex (France)

    2015-11-30

    Highlights: • Pb adsorption has been characterised on the Al{sub 13}Fe{sub 4}(0 1 0) approximant surface. • A pseudomorphic Pb monolayer is formed at 300 K on this highly corrugated template. • The Pb atomic arrangement replicates the motifs observed on the clean surface. • The formation of surface alloys and intermixing can be disregarded. • Efficient energy dissipation of impinging adatoms allows additional layer deposition. - Abstract: We report the adsorption of lead adatoms on the pseudo-10-fold Al{sub 13}Fe{sub 4}(0 1 0) surface using low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). For the submonolayer regime, Pb adatoms remain highly mobile across the surface at 300 K. STM analysis indicates the formation of irregularly shaped islands of monoatomic height. The latter do not coalesce with increasing coverage. At 0.95 MLE coverage, the LEED patterns are consistent with a pseudomorphic growth of the adatoms. This is confirmed by STM measurements which reveal local motifs qualitatively similar to those observed on the clean Al{sub 13}Fe{sub 4}(0 1 0) surface, i.e. prior to dosing. Apart from the absence of plasmons, the XPS measurements of Pb 4f and Al 2s core levels are comparable to those observed for the Pb/Al(1 1 1) system.

  13. Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE

    International Nuclear Information System (INIS)

    Sasaki, Takuo; Takahasi, Masamitu; Norman, Andrew G.; Romero, Manuel J.; Al-Jassim, Mowafak M.; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-01-01

    Defect characterization in molecular beam epitaxial (MBE) compositionally-graded In x Ga 1-x As layers on GaAs substrates consisting different thickness of overshooting (OS) layers was carried out using cathodoluminescence (CL) and transmission electron microscopy (TEM). We found that the thickness of the OS layer influences not only stress but also lattice defects generated in a top InGaAs layer. While the top InGaAs layer with a thin OS layer is under compression and has mainly threading dislocations, the top layer with a thick OS layer is under tension and exhibits inhomogeneous strain associating with phase separation. We will discuss the mechanisms of defect generation and their in-plane distribution based on strain relaxation at the top and OS layers. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

    Science.gov (United States)

    Palumbo, F.; Pazos, S.; Aguirre, F.; Winter, R.; Krylov, I.; Eizenberg, M.

    2017-06-01

    The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution. At the present, he is a research staff of the National Council of Science and Technology (CONICET), working in the National Commission of Atomic Energy (CNEA) in Buenos Aires, Argentina, well embedded within international research collaboration. Since 2008, he is Professor at the National Technological University (UTN) in Buenos Aires, Argentina. Dr. Palumbo has received research fellowships from: Marie Curie Fellowship within the 7th European Community Framework Programme, Abdus Salam International Centre for Theoretical Physics (ICTP) Italy, National Council of Science and Technology (CONICET) Argentina, and Consiglio Nazionale delle Ricerche (CNR) Italy. He is also a frequent scientific visitor of academic institutions as IMM-CNR-Italy, Minatec Grenoble-France, the Autonomous University of Barcelona-Spain, and the Israel Institute of Technology-Technion. He has authored and co-authored more than 50 papers in international conferences and journals.

  15. Analysis of self-organized In(Ga)As quantum structures with the scanning transmission electron microscope

    International Nuclear Information System (INIS)

    Sauerwald, Andres

    2008-01-01

    Aim of this thesis was to apply the analytical methods of the scanning transmission electron microscopy to the study of self-organized In(Ga)As quantum structures. With the imaging methods Z contrast and bright field (position resolutions in the subnanometer range) and especially with the possibilities of the quantitative chemical EELS analysis of the scanning transmission electron microscope (STEM) fundamental questions concerning morphology and chemical properties of self-organized quantum structures should be answered. By the high position resolution of the STEM among others essentail morphological and structural parameters in the growth behaviour of ''dot in a well'' (DWell) structures and of vertically correlated quantum dots (QDs) could be analyzed. For the optimization of DWell structures samples were studied, the nominal InAs-QD growth position was directedly varied within the embedding InGaAs quantum wells. The STEM offers in connection with the EELS method a large potential for the chemical analysis of quantum structures. Studied was a sample series of self-organized InGaAs/GaAs structures on GaAs substrate, the stress of which was changed by varying the Ga content of the INGaAs material between 2.4 % and 4.3 % [de

  16. Chronology and palaeoenvironmental implications of the ice-wedge pseudomorphs and composite-wedge casts on the Magdalen Islands (eastern Canada)

    DEFF Research Database (Denmark)

    Remillard, A.M.; Hetu, B.; Bernatchez, P.

    2015-01-01

    to the former presence of permafrost under periglacial conditions. These features truncate Carboniferous sandstone or Last Glacial Maximum (LGM) glacial and glaciomarine diamicts, both overlain by subtidal or coastal units. Six optically stimulated luminescence (OSL) and four radiocarbon ages were obtained from......The Magdalen Islands are a valuable terrestrial record, evidencing the complex glacial and periglacial history of the Gulf of St. Lawrence. Thirteen structures interpreted as ice-wedge pseudomorphs or composite-wedge casts were observed at four sites on the southern Magdalen Islands and testify...... both host and infilled sedimentary units. These ages provide the first absolute chronological data on these structures, shedding new light on the relationships between glacial and periglacial phases. Our chronostratigraphic data suggest that, after the deglaciation and the emersion of the archipelago...

  17. Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

    International Nuclear Information System (INIS)

    Shim, Byoung Rho; Torii, Satoshi; Ota, Takeshi; Kobayashi, Keisuke; Maehashi, Kenzo; Nakashima, Hisao; Lee, Sang Yun

    1999-01-01

    We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In x Ga 1-x As layers with x≤ 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing InGaAs thickness. The degree of polarization for the InGaAs QWRs was about 0.29. The PL observation evidences the carrier confinement in the QWRs. These results indicate that locally thick InGaAs strained QWRs were successfully formed at the edge of AlGaAs giant steps

  18. Evaluation of fiber Bragg grating sensor interrogation using InGaAs linear detector arrays and Gaussian approximation on embedded hardware

    Science.gov (United States)

    Kumar, Saurabh; Amrutur, Bharadwaj; Asokan, Sundarrajan

    2018-02-01

    Fiber Bragg Grating (FBG) sensors have become popular for applications related to structural health monitoring, biomedical engineering, and robotics. However, for successful large scale adoption, FBG interrogation systems are as important as sensor characteristics. Apart from accuracy, the required number of FBG sensors per fiber and the distance between the device in which the sensors are used and the interrogation system also influence the selection of the interrogation technique. For several measurement devices developed for applications in biomedical engineering and robotics, only a few sensors per fiber are required and the device is close to the interrogation system. For these applications, interrogation systems based on InGaAs linear detector arrays provide a good choice. However, their resolution is dependent on the algorithms used for curve fitting. In this work, a detailed analysis of the choice of algorithm using the Gaussian approximation for the FBG spectrum and the number of pixels used for curve fitting on the errors is provided. The points where the maximum errors occur have been identified. All comparisons for wavelength shift detection have been made against another interrogation system based on the tunable swept laser. It has been shown that maximum errors occur when the wavelength shift is such that one new pixel is included for curve fitting. It has also been shown that an algorithm with lower computation cost compared to the more popular methods using iterative non-linear least squares estimation can be used without leading to the loss of accuracy. The algorithm has been implemented on embedded hardware, and a speed-up of approximately six times has been observed.

  19. MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

    International Nuclear Information System (INIS)

    Richter, D; Hafenbrak, R; Joens, K D; Schulz, W-M; Eichfelder, M; Rossbach, R; Jetter, M; Michler, P

    2010-01-01

    To achieve a low density of optically active InP-quantum dots we used InGaAs islands embedded in GaAs as a seed layer. First, the structural InGaAs quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 μeV and fine structure splittings of 25 μeV. Furthermore, using these InGaAs quantum dots as seed layer reduces the InP quantum dot density of optically active quantum dots drastically. InP quantum dot excitonic photoluminescence emission with a linewidth of 140 μeV has been observed.

  20. InGaAs detectors and FPA's for a large span of applications: design and material considerations

    Science.gov (United States)

    Vermeiren, J. P.; Merken, P.

    2017-11-01

    Compared with the other Infrared detector materials, such as HgCdTe (or MCT) and lead salts (e.g.: PbS, PbSe, PbSnTe, …), the history of InGaAs FPA's is not that old. Some 25 years ago the first linear detectors were used for space missions [1,2]. During the last 15-20 years InGaAs, grown lattice matched on InP, has become the work horse for the telecommunication industry [3] and later on for passive and active imagery in the SWIR range. For longer wavelengths than 1.7 μm, III-V materials are in strong competition with SWIR MCT and till now the performance of MCT is better than high In-content InGaAs. During the last years some alternatives based on quaternary materials [4] and on Superlattice structures [5] are making gradual progress in such a way that they can yield performing Focal planes in the (near) future. As the SWIR wavelengths range covers a large variety of applications, also the FPA characteristics and mainly the ROIC properties need to be adjusted to fulfil the mission requirements with the requested performance. Additionally one has to bear in mind that the nature of SWIR radiation is completely different from what is usually encountered in IR imaging. Whereas the signal of thermal imagery in the Middle Wavelength (MWIR: [3 - 5 μm]) or Long Wavelength (LWIR: [8 - 10 μm] or [8 - 12 μm]) band is characterized by a large DC pedestal, caused by objects at ambient temperature, and a small AC signal, due to the small temperature or emissivity variations, SWIR range imagery is characterized by a large dynamic range and almost no DC signal. In this sense the SWIR imagery is resembling more the nature of Visible and NIR imaging than that of thermal imagery.

  1. Optical and electronic properties of InGaAs and nitride quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Baer, N.

    2006-06-15

    In the present thesis, the electronic and optical properties of such nanostructures have been investigated for the well established III-V and the new group-III nitride material system. The influence of Coulomb correlations on the optical spectra of InGaAs QDs are studied using a full configuration interaction approach. The resulting multi-exciton spectra for up to twelve excitons are investigated in detail. Characteristic features of the spectra are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Additionally, we study the electronic and optical properties of self-assembled InN/GaN quantum dots. The existence of an exactly degenerate p-shell is discussed in detail. Dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for configuration interaction calculations. We present multi-exciton emission spectra and investigate how Coulomb correlations and oscillator strengths are altered by the built-in electrostatic fields present in these structures. From our results, we predict vanishing exciton and biexciton ground state emission for small lens-shaped dots, which is explained by a careful analysis of the underlying symmetry group. To study the photoluminescence dynamics of an initially excited QD system, we employ a microscopic semiconductor theory. Carrier-carrier correlations beyond the Hartee-Fock level are included within a cluster expansion truncation scheme up to the singlet-doublet level. The influence of these correlations on the spectrum and the photoluminescence dynamics is investigated for the emission into free space as well as for QDs embedded in an optical microcavity. (orig.)

  2. Optical and electronic properties of InGaAs and nitride quantum dots

    International Nuclear Information System (INIS)

    Baer, N.

    2006-06-01

    In the present thesis, the electronic and optical properties of such nanostructures have been investigated for the well established III-V and the new group-III nitride material system. The influence of Coulomb correlations on the optical spectra of InGaAs QDs are studied using a full configuration interaction approach. The resulting multi-exciton spectra for up to twelve excitons are investigated in detail. Characteristic features of the spectra are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Additionally, we study the electronic and optical properties of self-assembled InN/GaN quantum dots. The existence of an exactly degenerate p-shell is discussed in detail. Dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for configuration interaction calculations. We present multi-exciton emission spectra and investigate how Coulomb correlations and oscillator strengths are altered by the built-in electrostatic fields present in these structures. From our results, we predict vanishing exciton and biexciton ground state emission for small lens-shaped dots, which is explained by a careful analysis of the underlying symmetry group. To study the photoluminescence dynamics of an initially excited QD system, we employ a microscopic semiconductor theory. Carrier-carrier correlations beyond the Hartee-Fock level are included within a cluster expansion truncation scheme up to the singlet-doublet level. The influence of these correlations on the spectrum and the photoluminescence dynamics is investigated for the emission into free space as well as for QDs embedded in an optical microcavity. (orig.)

  3. Composition–dependent growth dynamics of selectively grown InGaAs nanowires

    International Nuclear Information System (INIS)

    Kohashi, Y; Hara, S; Motohisa, J

    2014-01-01

    We grew gallium-rich (x > 0.50) and indium-rich (x < 0.50) In 1 − x Ga x As nanowires by catalyst–free selective-area metal–organic vapor-phase epitaxy (SA-MOVPE), and compared their growth dynamics dependence on V/III ratio. It was found that the growth dynamics of In 1 − x Ga x As nanowires is clearly dependent on the alloy composition x. Specifically, for gallium–rich nanowire growth, the axial growth rate of nanowires initially increased with decreasing V/III ratio, and then started to decrease when the V/III ratio continued to decrease below a critical value. On the other hand, axial growth rate of indium-rich nanowires monotonically decreased with decreasing V/III ratio. In addition, the alloy composition was strongly dependent on the V/III ratio for gallium-rich nanowire growth, while it was relatively independent of the V/III ratio for indium-rich nanowire growth. We discuss the origin of dissimilarity in the growth dynamics dependence on V/III ratio between gallium-rich and indium-rich InGaAs nanowire growth, and conclude that it is due to the inherent dissimilarity between GaAs and InAs. Our finding provides important guidelines for achieving precise control of the diameter, height, and alloy composition of nanowires suitable for future nanowire-based electronics. (papers)

  4. Pulsed Electrical Spin Injection into InGaAs Quantum Dots: Studies of the Electroluminescence Polarization Dynamics

    International Nuclear Information System (INIS)

    Asshoff, P.; Loeffler, W.; Fluegge, H.; Zimmer, J.; Mueller, J.; Westenfelder, B.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.

    2010-01-01

    We present time-resolved studies of the spin polarization dynamics during and after initialization through pulsed electrical spin injection into InGaAs quantum dots embedded in a p-i-n-type spin-injection light-emitting diode. Experiments are performed with pulse widths in the nanosecond range and a time-resolved single photon counting setup is used to detect the subsequent electroluminescence. We find evidence that the achieved spin polarization shows an unexpected temporal behavior, attributed mainly to many-carrier and non-equilibrium effects in the device.

  5. Raman Scattering analysis of InGaAs and AlGaAs superlattices grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Oeztuerk, N.; Bahceli, S.

    2010-01-01

    InGaAs/GaAs and AlGaAs/GaAs multiple quantum well structures were grown by molecular beam epitaxy and investigated by X-ray diffraction and micro Raman spectroscopy. Phonon modes are investigated in backscattering from (001) surface. In the measured micro Raman spectrum for both structure, phonon peaks can be resolved for GaAs. These are longitudinal optical (LO) mode at 293 cm - 1 and 294 cm - 1 for InGaAs and AlGaAs, respectively.

  6. The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

    International Nuclear Information System (INIS)

    Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

    2006-01-01

    The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

  7. Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns

    International Nuclear Information System (INIS)

    Zhou Xun; Luo Zi-Jiang; Guo Xiang; Zhang Bi-Chan; Shang Lin-Tao; Zhou Qing; Deng Chao-Yong; Ding Zhao

    2012-01-01

    Surface segregation is studied via the evolution of reflection high-energy electron diffraction (RHEED) patterns under different values of As 4 BEP for InGaAs films. When the As 4 BEP is set to be zero, the RHEED pattern keeps a 4×3/(n × 3) structure with increasing temperature, and surface segregation takes place until 470 °C. The RHEED pattern develops into a metal-rich (4 × 2) structure as temperature increases to 495 °C. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515 °C, the RHEED pattern turns into a GaAs(2 × 4) structure due to In desorption. While the As 4 BEP comes up to a specific value (1.33 × 10 -4 Pa−1.33 × 10 -3 Pa), the surface temperature can delay the segregation and desorption. We find that As 4 BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption. (condensed matter: structural, mechanical, and thermal properties)

  8. Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation

    Directory of Open Access Journals (Sweden)

    R. Salas

    2017-09-01

    Full Text Available We report the effects of the growth rate on the properties of iii-v nanocomposites containing rare-earth-monopnictide nanoparticles. In particular, the beneficial effects of surfactant-assisted growth of LuAs:In0.53Ga0.47As nanocomposites were found to be most profound at reduced LuAs growth rates. Substantial enhancement in the electrical and optical properties that are beneficial for ultrafast photoconductors was observed and is attributed to the higher structural quality of the InGaAs matrix in this new growth regime. The combined enhancements enabled a >50% increase in the amount of LuAs that could be grown without degrading the quality of the InGaAs overgrowth. Dark resistivity increased by ∼25× while maintaining carrier mobilities over 3000 cm2/V s; carrier lifetimes were reduced by >2×, even at high depositions of LuAs. The combined growth rate and surfactant enhancements offer a previously unexplored regime to enable high-performance fast photoconductors that may be integrated with telecom components for compact, broadly tunable, heterodyne THz source and detectors.

  9. Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness

    Science.gov (United States)

    Kajikawa, Y.; Nishigaichi, M.; Tenma, S.; Kato, K.; Katsube, S.

    2018-04-01

    InGaAs layers were grown by molecular-beam epitaxy on nominal and vicinal Ge(111) substrates with inserting GaSb buffer layers. High-resolution X-ray diffraction using symmetric 333 and asymmetric 224 reflections was employed to analyze the crystallographic properties of the grown layers. By using the two reflections, we determined the lattice constants (the unit cell length a and the angle α between axes) of the grown layers with taking into account the rhombohedral distortion of the lattices of the grown layers. This allowed us the independent determination of the strain components (perpendicular and parallel components to the substrate surface, ε⊥ and ε//) and the composition x of the InxGa1-xAs layers by assuming the distortion coefficient D, which is defined as the ratio of ε⊥ against ε//. Furthermore, the twin ratios were determined for the GaSb and the InGaAs layers by comparing asymmetric 224 reflections from the twin domain with that from the normal domain of the layers. As a result, it has been shown that the twin ratio in the InGaAs layer can be decreased to be less than 0.1% by the use of the vicinal substrate together with annealing the GaSb buffer layer during the growth interruption before the InGaAs overgrowth.

  10. InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform.

    Science.gov (United States)

    Park, Jin-Kown; Takagi, Shinichi; Takenaka, Mitsuru

    2018-02-19

    We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.

  11. Effects of silicon-nitride passivation on the electrical behavior of 0.1-μm pseudomorphic high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Oh, Jung-Hun; Sul, Woo-Suk; Han, Hyo-Jong; Jang, Hae-Kang; Son, Myung-Sik; Rhee, Jin-Koo; Kim, Sam- Dong

    2004-01-01

    We examine the effects of surface state formation due to silicon-nitride passivation on the electrical characteristics of GaAs-based 0.1-μm pseudomorphic high-electron-mobility transistors (pHEMTs). In this study, DC and noise characteristic are investigated before and after the passivation of the pHEMTs. After the passivation, we observe significant degradation of noise performance in the frequency range of 55 - 62 GHz. We also observe clear increases in the drain-source saturation current at a gate voltage of 0 V and in the extrinsic transconductance at a drain voltage of 1 V from 325 and 264 to 365 mA/mm and 304 mS/mm, respectively, with no significant variation in pinchoff voltage. We propose that the observed variations in the DC and the noise characteristics are due to the positively charged surface state after deposition of the silicon nitride passivation film. Hydrodynamic device model simulations were performed based upon the proposed mechanisms for the change in electrical behavior, and the calculated results show good agreement with the experimental results.

  12. Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

    International Nuclear Information System (INIS)

    Yu Xin-Hai; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Xi Xiao-Wen

    2015-01-01

    The high power microwave (HPM) damage effect on the AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ −0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy (SEM) illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device burn-out and the location beneath the gate near the source side is most susceptible to burn-out, which is in accordance with the simulated results. (paper)

  13. InAlAs/InGaAs Pseudomorphic High Eelectron Mobility Transistors Grown by Molecular Beam Epitaxy on the InP Substrate

    International Nuclear Information System (INIS)

    Huang Jie; Guo Tian-Yi; Zhang Hai-Ying; Xu Jing-Bo; Fu Xiao-Jun; Yang Hao; Niu Jie-Bin

    2010-01-01

    A novel PMMA/PMGI/ZEP520 trilayer resist electron beam lithograph (EBL) technology is successfully developed and used to fabricate the 150 nm gate-length In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As Pseudomorphic HEMT on an InP substrate, of which the material structure is successfully designed and optimized. A perfect profile of T-gate is successfully obtained. These fabricated devices demonstrate excellent dc and rf characteristics: the transconductance G m , maximum saturation drain-to-source current I DSS , threshold voltage V T , maximum current gain frequency f T derived from h 21 , maximum frequency of oscillation derived from maximum available power gain/maximum stable gain and from unilateral power-gain of metamorphic InGaAs/InAlAs high electron mobility transistors (HEMTs) are 470 mS/mm, 560 mA/mm, −1.0 V, 76 GHz, 135 GHz and 436 GHz, respectively. The excellent high frequency performances promise the possibility of metamorphic HEMTs for millimeter-wave applications. (cross-disciplinary physics and related areas of science and technology)

  14. Growth and properties of In(Ga)As nanowires on silicon

    International Nuclear Information System (INIS)

    Hertenberger, Simon

    2012-01-01

    properties and homogeneous array-like characteristics. High vertical growth yields of 90 % are achieved on substrates patterned either by e-beam lithography (for small scale arrays) or nanoimprint lithography (NIL, for large scale arrays > 5 x 5 mm 2 ). In addition, X-ray rocking curve measurements evidence very low crystal tilt and perfect vertical alignment along the (111) direction with full widths at half maximum (FWHM) as low as 0.6 . Furthermore, systematic investigations of the size scaling behavior as a function of the pitch (interwire distance) highlight the existence of two growth regimes: (i) a competitive growth regime for narrow pitches and (ii) a diffusion-limited regime for wider pitches, where growth is limited by the diffusion length of In adatoms on the SiO 2 surface (∝750 nm at T=480 C). Furthermore, the growth of ternary InGaAs nanowires on sputter-deposited SiO x /Si(111) and NIL-patterned SiO 2 /Si(111) substrates is investigated. Here, composition tuning with Ga contents ranging from 0-60 % was achieved as confirmed by X-ray diffraction and energy dispersive X-ray spectroscopy. Furthermore, the two different growth strategies are compared yielding a significantly lower FWHM of the 2θ-XRD-peak in the case of NIL-patterned substrates (0.031 ) as compared to self-assembled grown nanowires (0.084 ). This finding is further supported by Raman spectroscopy showing lower longitudinal optical to transversal optical (LO/TO) intensity ratios and lower LO-FWHM for both the InAs-like and GaAs-like LO modes in the case of NIL-patterned nanowire growth. These observations indicate superior composition homogeneity for positioned nanowire growth on patterned substrates. In addition, low-T photoluminescence (PL) measurements are presented showing band gap tuning over a wavelength range of ∝1800-2850 nm where PL peak linewidths are as narrow as ∝30 meV, independent of the Ga content. Finally, the effect of growth parameters on the microstructure are investigated

  15. Growth and properties of In(Ga)As nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hertenberger, Simon

    2012-10-15

    nanowire properties and homogeneous array-like characteristics. High vertical growth yields of 90 % are achieved on substrates patterned either by e-beam lithography (for small scale arrays) or nanoimprint lithography (NIL, for large scale arrays > 5 x 5 mm{sup 2}). In addition, X-ray rocking curve measurements evidence very low crystal tilt and perfect vertical alignment along the (111) direction with full widths at half maximum (FWHM) as low as 0.6 . Furthermore, systematic investigations of the size scaling behavior as a function of the pitch (interwire distance) highlight the existence of two growth regimes: (i) a competitive growth regime for narrow pitches and (ii) a diffusion-limited regime for wider pitches, where growth is limited by the diffusion length of In adatoms on the SiO{sub 2} surface (∝750 nm at T=480 C). Furthermore, the growth of ternary InGaAs nanowires on sputter-deposited SiO{sub x}/Si(111) and NIL-patterned SiO{sub 2}/Si(111) substrates is investigated. Here, composition tuning with Ga contents ranging from 0-60 % was achieved as confirmed by X-ray diffraction and energy dispersive X-ray spectroscopy. Furthermore, the two different growth strategies are compared yielding a significantly lower FWHM of the 2θ-XRD-peak in the case of NIL-patterned substrates (0.031 ) as compared to self-assembled grown nanowires (0.084 ). This finding is further supported by Raman spectroscopy showing lower longitudinal optical to transversal optical (LO/TO) intensity ratios and lower LO-FWHM for both the InAs-like and GaAs-like LO modes in the case of NIL-patterned nanowire growth. These observations indicate superior composition homogeneity for positioned nanowire growth on patterned substrates. In addition, low-T photoluminescence (PL) measurements are presented showing band gap tuning over a wavelength range of ∝1800-2850 nm where PL peak linewidths are as narrow as ∝30 meV, independent of the Ga content. Finally, the effect of growth parameters on the

  16. Monitoring non-pseudomorphic epitaxial growth of spinel/perovskite oxide heterostructures by reflection high-energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Schütz, P.; Pfaff, F.; Scheiderer, P.; Sing, M.; Claessen, R. [Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)

    2015-02-09

    Pulsed laser deposition of spinel γ-Al{sub 2}O{sub 3} thin films on bulk perovskite SrTiO{sub 3} is monitored by high-pressure reflection high-energy electron diffraction (RHEED). The heteroepitaxial combination of two materials with different crystal structures is found to be inherently accompanied by a strong intensity modulation of bulk diffraction patterns from inelastically scattered electrons, which impedes the observation of RHEED intensity oscillations. Avoiding such electron surface-wave resonance enhancement by de-tuning the RHEED geometry allows for the separate observation of the surface-diffracted specular RHEED signal and thus the real-time monitoring of sub-unit cell two-dimensional layer-by-layer growth. Since these challenges are essentially rooted in the difference between film and substrate crystal structure, our findings are of relevance for the growth of any heterostructure combining oxides with different crystal symmetry and may thus facilitate the search for novel oxide heterointerfaces.

  17. Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.

    Science.gov (United States)

    Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev

    2016-06-27

    We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer

  18. Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities

    DEFF Research Database (Denmark)

    Reitzenstein, S.; Schneider, C.; Albert, F.

    2011-01-01

    Semiconductor quantum dots (QDs) are fascinating nanoscopic structures for photonics and future quantum information technology. However, the random position of self-organized QDs inhibits a deterministic coupling in devices relying on cavity quantum electrodynamics (cQED) effects which complicates......, e.g., the large scale fabrication of quantum light sources. As a result, large efforts focus on the growth and the device integration of site-controlled QDs. We present the growth of low density arrays of site-controlled In(Ga)As QDs where shallow etched nanoholes act as nucleation sites...... linewidth, the oscillator strength and the quantum efficiency. A stacked growth of strain coupled SCQDs forming on wet chemically etched nanoholes provide the smallest linewidth with an average value of 210 μeV. Using time resolved photoluminescence studies on samples with a varying thickness of the capping...

  19. Reconstruction of original indium distribution in InGaAs quantum wells from experimental SIMS depth profiles

    Energy Technology Data Exchange (ETDEWEB)

    Kudriavtsev, Yu., E-mail: yuriyk@cinvestav.mx [Departamento Ingeniería Eléctrica – SEES, CINVESTAV-IPN, Av. IPN #2508, D.F., México (Mexico); Asomoza, R. [Departamento Ingeniería Eléctrica – SEES, CINVESTAV-IPN, Av. IPN #2508, D.F., México (Mexico); Gallardo-Hernandez, S.; Ramirez-Lopez, M.; Lopez-Lopez, M. [Departamento de Física, CINVESTAV-IPN, México (Mexico); Nevedomsky, V.; Moiseev, K. [Ioffe Physical Technical Institute, S-Petersburg (Russian Federation)

    2014-11-15

    Depth profiling analysis of InGaAs/GaAs hetero-structures grown by MBE on GaAs (0 0 1) substrates is reported. A novel two-step procedure for de-convolving experimental SIMS depth distribution is employed and the original In distribution in InGaAs quantum wells (QW) is estimated. The QW thickness calculated from the de-convolved profiles is shown to be in good agreement with the cross-sectional TEM images. The experimental In depth profile is shifted from the original In distribution due to the ion mixing process during depth profiling analysis. It is shown that the de-convolution procedure is suitable for reconstruction of the original QW width and depth by SIMS even for relatively high primary ion energies.

  20. Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodes

    International Nuclear Information System (INIS)

    Schramm, A; Polojärvi, V; Hakkarainen, T V; Tukiainen, A; Guina, M

    2011-01-01

    We study effects of rapid thermal annealing on photoluminescence and electron confinement of InGaAs quantum posts by means of photoluminescence experiments and capacitance–voltage spectroscopy. The quantum posts are embedded in n-type Schottky diodes grown by molecular beam epitaxy on GaAs(1 0 0). The observed photoluminescence spectra arise from the quantum posts as well as from a contribution of a wetting-layer superlattice. With increasing annealing temperatures, the quantum-post photoluminescence blueshifts toward the wetting-layer superlattice, and upon the highest annealing step, the wetting-layer superlattice luminescence dominates. In capacitance–voltage experiments, we clearly observe a charge accumulation in the quantum-post layer as well as from the wetting-layer superlattice. Capacitance–voltage spectra and carrier-density profiles only experience slight changes upon annealing treatments. We suggest that the main electron accumulation takes place in the wetting-layer superlattice

  1. Indium and gallium diffusion through zirconia in the TiN/ZrO{sub 2}/InGaAs stack

    Energy Technology Data Exchange (ETDEWEB)

    Ceballos-Sanchez, O. [CINVESTAV-Unidad Queretaro, Queretaro, Qro. 76230 (Mexico); Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Martinez, E.; Guedj, C.; Veillerot, M. [Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Herrera-Gomez, A. [CINVESTAV-Unidad Queretaro, Queretaro, Qro. 76230 (Mexico)

    2015-06-01

    Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS) was applied to the TiN/ZrO{sub 2}/InGaAs stack to assess its thermal stability. Through a robust ARXPS analysis, it was possible to observe subtle effects such as the thermally induced diffusion of substrate atomic species (In and Ga) through the dielectric layer. The detailed characterization of the film structure allowed for assessing the depth profiles of the diffused atomic species by means of the scenarios-method. Since the quantification for the amount of diffused material was done at different temperatures, it was possible to obtain an approximate value of the activation energy for the diffusion of indium through zirconia. The result is very similar to the previously reported values for indium diffusion through alumina and through hafnia.

  2. Performance of an Uncooled Camera Utilizing an SWIR InGaAs 256x256 FPA for Imaging in the 1.0 micrometer - 1.7 micrometer Spectral Band

    National Research Council Canada - National Science Library

    Barton, J

    1998-01-01

    .... The camera spectral sensitivity is established by the material properties of the detector array which is composed of photovoltaic detectors formed in an epitaxial layer of InGaAs with a composition...

  3. Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors

    International Nuclear Information System (INIS)

    Zimmermann, Lars; John, Joachim; Degroote, Stefan; Borghs, Gustaaf; Hoof, Chris van; Nemeth, Stefan

    2003-01-01

    We conducted an experimental study of back-side-illuminated InGaAs photodiodes grown on GaAs and sensitive in the short-wave infrared up to 2.4 μm. Standard metamorphic InGaAs or IR-transparent InAlAs buffers were grown by molecular-beam epitaxy. We studied dark current and photocurrent as a function of buffer thickness, buffer material, and temperature. A saturation of the dark current with buffer thickness was not observed. The maximum resistance area product was ∼10 Ω cm2 at 295 K. The dark current above 200 K was dominated by generation-recombination current. A pronounced dependence of the photocurrent on the buffer thickness was observed. The peak external quantum efficiency was 46% (at 1.6 μm) without antireflective coating

  4. Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

    Czech Academy of Sciences Publication Activity Database

    Zíková, Markéta; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Hulicius, Eduard

    2017-01-01

    Roč. 464, Apr (2017), s. 59-63 ISSN 0022-0248 R&D Projects: GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : MOVPE * quantum dot * strain reducing layer * InAs * GaAsSb * InGaAs Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

  5. Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Rahul, E-mail: rkp203@gmail.com [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Bag, Ankush [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Mukhopadhyay, Partha [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur 721302 (India); Das, Subhashis [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Biswas, Dhrubes [Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2015-12-01

    Highlights: • InGaAs graded MBs with different grading scheme has been grown by MBE on GaAs. • Continuously graded MB exhibits smoother surface morphology. • Grading scheme has been found to have little impact on lattice relaxation. • Grading schemeaffects the lattice tilt significantly. • Cross-hatch surface irregularities affect the crystallographic tilt. - Abstract: InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

  6. Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

    International Nuclear Information System (INIS)

    Kumar, Rahul; Bag, Ankush; Mukhopadhyay, Partha; Das, Subhashis; Biswas, Dhrubes

    2015-01-01

    Highlights: • InGaAs graded MBs with different grading scheme has been grown by MBE on GaAs. • Continuously graded MB exhibits smoother surface morphology. • Grading scheme has been found to have little impact on lattice relaxation. • Grading schemeaffects the lattice tilt significantly. • Cross-hatch surface irregularities affect the crystallographic tilt. - Abstract: InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

  7. Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

    Science.gov (United States)

    Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

    2016-06-01

    Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

  8. Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers

    International Nuclear Information System (INIS)

    Kim, J. S.; Kim, E. K.; Hwang, H.; Park, K.; Yoon, E.; Park, I. W.; Park, Y. J.

    2004-01-01

    We have investigated the energy levels of InAs quantum dots (QDs) embedded in various barrier layers such as InP, InGaAs and GaAs by using deep level transient spectroscopy (DLTS) measurement. The apparent activation energy of 0.56 eV below the conduction band edge of barrier layers in the InAs/InP QD system was higher than 0.32 eV in the InAs/In 0.53 Ga 0.47 As QD system or 0.29 eV in the InAs/GaAs/In 0.53 Ga 0.47 As QD system, which was inserted in 10 mono-layers (MLs) GaAs between InAs QDs and the InGaAs barrier. The capture barrier heights of InAs QDs in the InAs/InP system was measured at more than about 0.18 eV, showing the existence of strain between QDs and barrier layers. The InAs/GaAs(10 MLs)/InGaAs system also showed about 0.12 eV capture barrier, but the InAs/InGaAs system has a very small barrier. This result might originate from the strain-relief effect due to InGaAs layers.

  9. 408-fs SESAM mode locked Cr:ZnSe laser

    Science.gov (United States)

    Bu, Xiangbao; Shi, Yuhang; Xu, Jia; Li, Huijuan; Wang, Pu

    2018-01-01

    We report self-starting femtosecond operation of a 127-MHz SESAM mode locked Cr:ZnSe laser around 2420 nm. A thulium doped double clad fiber laser at 1908 nm was used as the pumping source. In the normal dispersion regime, stable pulse pairs with constant phase differences in the multipulse regime were observed. The maximum output power was 342 mW with respect to incident pump power of 4.8 W and the corresponding slope efficiency was 10.4%. By inserting a piece of sapphire plate, dispersion compensation was achieved and the intra-cavity dispersion was moved to the anomalous regime. A maximum output power of 403 mW was obtained and the corresponding slope efficiency was 12.2%. Pulse width was measured to be 408 fs by a collinear autocorrelator using two-photon absorption in an InGaAs photodiode. The laser spectrum in multipulse operation showed a clear periodic modulation.

  10. Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale.

    Science.gov (United States)

    Wu, Xing; Luo, Chen; Hao, Peng; Sun, Tao; Wang, Runsheng; Wang, Chaolun; Hu, Zhigao; Li, Yawei; Zhang, Jian; Bersuker, Gennadi; Sun, Litao; Pey, Kinleong

    2018-01-01

    The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The high-speed property gives the light-emitting diodes a high response speed and low dark current, and they are widely used in communications, infrared remote sensing, optical detection, and other fields. The rational design of high-performance devices requires a detailed understanding of the electronic structure at this interface; however, this understanding remains a challenge, given the complex nature of surface interactions and the dynamic relationship between the morphology evolution and electronic structures. Herein, in situ transmission electron microscopy is used to probe and manipulate the structural and electrical properties of ZrO 2 films on Al 2 O 3 and InGaAs substrate at the atomic scale. Interfacial defects resulting from the spillover of the oxygen-atom conduction-band wavefunctions are resolved. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. An EELS sub-nanometer investigation of the dielectric gate stack for the realization of InGaAs based MOSFET devices

    International Nuclear Information System (INIS)

    Longo, P; Paterson, G W; Craven, A J; Holland, M C; Thayne, I G

    2010-01-01

    In this paper, a subnanometer investigation of the Ga 2 O 3 /GdGaO dielectric gate stack deposited onto InGaAs is presented. Results regarding the influence of the growth conditions on the interface region from a chemical and morphological point of view are presented. The chemical information reported in this paper has been obtained using electron energy loss spectroscopy (EELS) that was carried out in a scanning transmission electron microscope ((S)TEM) showing both spatial and depth resolution.

  12. Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

    OpenAIRE

    Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

    2016-01-01

    InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the ...

  13. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang; Li, Guoqiang

    2014-01-01

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In x Ga 1−x As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In x Ga 1−x As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In x Ga 1−x As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In x Ga 1−x As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In x Ga 1−x As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In x Ga 1−x As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates

  14. Progress in Applying Tunable Diode Laser Absorption Spectroscopy to Scramjet Isolators and Combustors

    Science.gov (United States)

    2010-05-01

    us ing a T exas Instruments OPA380 transimpedance amplifier /op amp for each photodiode. This amplifier with 90 MHz of gain bandwidth is a single...spectra 4 2 Boltzmann plot for Run AC 6 3 CFD Simulations for isolator 7 4 Optical layout for diode laser system 11 5 Optical amplifier circuit 11 6...designed InGaAs photodiode arrays. These custom designed arrays amplify the signal f rom 2m m di ameter FGA21 phot odiodes ( FGA 21 f rom T horLabs

  15. Sub-monolayer dot vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Blokhin, S.A.; Maleev, N.A.; Kuz'menkov, A.G.

    2006-01-01

    Vertical-cavity surface-emitting lasers (VCSELs) based on submonolayer InGaAs quantum-dot active region and doped with AlGaAs/GaAs distributed Bragg reflectors were grown by molecular beam epitaxy. 3 μm aperture single-mode VCSELs demonstrate lasing at 980 nm with threshold current of 0.6 mA, maximum output power of 4 mW and external differential efficiency as high as 68%. Ultimately low internal optical losses were measured for these multimode sub-monolayer quantum dot VCSELs [ru

  16. Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

    CERN Document Server

    Shim, B R; Ota, T; Kobayashi, K; Maehashi, K; Nakashima, H; Lee, S Y

    1999-01-01

    We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In sub x Ga sub 1 sub - sub x As layers with x<= 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing...

  17. Passively mode-locked diode-pumped Tm3+:YLF laser emitting at 1.91 µm using a GaAs-based SESAM

    Science.gov (United States)

    Tyazhev, A.; Soulard, R.; Godin, T.; Paris, M.; Brasse, G.; Doualan, J.-L.; Braud, A.; Moncorgé, R.; Laroche, M.; Camy, P.; Hideur, A.

    2018-04-01

    We report on a diode-pumped Tm:YLF laser passively mode-locked with an InGaAs saturable absorber. The laser emits a train of 31 ps pulses at a wavelength of 1.91 µm with a repetition rate of 94 MHz and a maximum average power of 95 mW. A sustained and robust mode-locking with a signal-to-noise ratio of ~70 dB is obtained even at high relative air humidity, making this system attractive for applications requiring ultra-short pulses in the spectral window just below 2 µm.

  18. Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

    DEFF Research Database (Denmark)

    Xu, Zhangcheng

    2004-01-01

    deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate......The fabrication, characterization and exploitation of self-assembled quantum dot (QD) heterostructures have attracted much attention not only in basic research, but also by the promising device applications such as QD lasers. The Stranski-Krastanow (SK) growth and the submonolayer (SML) deposition...... deposition of 0.5 ML InAs and 2.5 MLGaAs. The growth, structure, and optical properties of SML InGaAs/GaAs QD heterostructures are investigated in detail. SML InGaAs/GaAs QD lasers lasing even at room temperature have been successfully realized. The gain properties of SML InGaAs QD lasers are studied...

  19. MT6415CA: a 640×512-15µm CTIA ROIC for SWIR InGaAs detector arrays

    Science.gov (United States)

    Eminoglu, Selim; Isikhan, Murat; Bayhan, Nusret; Gulden, M. Ali; Incedere, O. Samet; Soyer, S. Tuncer; Kocak, Serhat; Yilmaz, Gokhan S.; Akin, Tayfun

    2013-06-01

    This paper reports the development of a new low-noise CTIA ROIC (MT6415CA) suitable for SWIR InGaAs detector arrays for low-light imaging applications. MT6415CA is the second product in the MT6400 series ROICs from Mikro-Tasarim Ltd., which is a fabless IC design house specialized in the development of monolithic imaging sensors and ROICs for hybrid imaging sensors. MT6415CA is a low-noise snapshot CTIA ROIC, has a format of 640 × 512 and pixel pitch of 15 µm, and has been developed with the system-on-chip architecture in mind, where all the timing and biasing for this ROIC are generated on-chip without requiring any external inputs. MT6415CA is a highly configurable ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. It performs snapshot operation both using Integrate-Then-Read (ITR) and Integrate-While-Read (IWR) modes. The CTIA type pixel input circuitry has three gain modes with programmable full-well-capacity (FWC) values of 10.000 e-, 20.000 e-, and 350.000 e- in the very high gain (VHG), high-gain (HG), and low-gain (LG) modes, respectively. MT6415CA has an input referred noise level of less than 5 e- in the very high gain (VHG) mode, suitable for very low-noise SWIR imaging applications. MT6415CA has 8 analog video outputs that can be programmed in 8, 4, or 2-output modes with a selectable analog reference for pseudo-differential operation. The ROIC runs at 10 MHz and supports frame rate values up to 200 fps in the 8-output mode. The integration time can be programmed up to 1s in steps of 0.1 µs. The ROIC uses 3.3 V and 1.8V supply voltages and dissipates less than 150 mW in the 4-output mode. MT6415CA is fabricated using a modern mixed-signal CMOS process on 200 mm CMOS wafers, and tested parts are available at wafer or die levels with test reports and wafer maps. A compact USB 3.0 camera and imaging software have been developed to demonstrate the imaging

  20. Lasers '89

    International Nuclear Information System (INIS)

    Harris, D.G.; Shay, T.M.

    1990-01-01

    This book covers the following topics: XUV, X-Ray and Gamma-Ray Lasers, excimer lasers, chemical lasers, nuclear pumped lasers, high power gas lasers, solid state lasers, laser spectroscopy. The paper presented include: Development of KrF lasers for fusion and Nuclear driven solid-state lasers

  1. Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on artificially patterned GaAs (3 1 1)B substrates

    NARCIS (Netherlands)

    Selçuk, E.; Hamhuis, G.J.; Nötzel, R.

    2009-01-01

    Self-organized anisotropic strain engineering is combined with growth on artificially patterned GaAs (3 1 1)B substrates to realize complex lateral ordering of InGaAs and InAs quantum dots (QDs) guided by steps and facets generated along the pattern sidewalls. Depending on the pattern design, size,

  2. Stability of quantum-dot excited-state laser emission under simultaneous ground-state perturbation

    Energy Technology Data Exchange (ETDEWEB)

    Kaptan, Y., E-mail: yuecel.kaptan@physik.tu-berlin.de; Herzog, B.; Schöps, O.; Kolarczik, M.; Woggon, U.; Owschimikow, N. [Institut für Optik und Atomare Physik, Technische Universität Berlin, Berlin (Germany); Röhm, A.; Lingnau, B.; Lüdge, K. [Institut für Theoretische Physik, Technische Universität Berlin, Berlin (Germany); Schmeckebier, H.; Arsenijević, D.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin (Germany); Mikhelashvili, V.; Eisenstein, G. [Technion Institute of Technology, Faculty of Electrical Engineering, Haifa (Israel)

    2014-11-10

    The impact of ground state amplification on the laser emission of In(Ga)As quantum dot excited state lasers is studied in time-resolved experiments. We find that a depopulation of the quantum dot ground state is followed by a drop in excited state lasing intensity. The magnitude of the drop is strongly dependent on the wavelength of the depletion pulse and the applied injection current. Numerical simulations based on laser rate equations reproduce the experimental results and explain the wavelength dependence by the different dynamics in lasing and non-lasing sub-ensembles within the inhomogeneously broadened quantum dots. At high injection levels, the observed response even upon perturbation of the lasing sub-ensemble is small and followed by a fast recovery, thus supporting the capacity of fast modulation in dual-state devices.

  3. Real-time near IR (1310 nm) imaging of CO2 laser ablation of enamel.

    Science.gov (United States)

    Darling, Cynthia L; Fried, Daniel

    2008-02-18

    The high-transparency of dental enamel in the near-IR (NIR) can be exploited for real-time imaging of ablation crater formation during drilling with lasers. NIR images were acquired with an InGaAs focal plane array and a NIR zoom microscope during drilling incisions in human enamel samples with a lambda=9.3-microm CO(2) laser operating at repetition rates of 50-300-Hz with and without a water spray. Crack formation, dehydration and thermal changes were observed during ablation. These initial images demonstrate the potential of NIR imaging to monitor laser-ablation events in real-time to provide information about the mechanism of ablation and to evaluate the potential for peripheral thermal and mechanical damage.

  4. Ageing tests of radiation damaged lasers and photodiodes for the CMS experiment at CERN

    CERN Document Server

    Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

    2000-01-01

    The effects of thermally accelerated ageing in irradiated and unirradiated 1310 nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (19 refs).

  5. Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission

    International Nuclear Information System (INIS)

    Urbanczyk, A.; Hamhuis, G. J.; Noetzel, R.

    2010-01-01

    We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain recognition. This enables nanometer-scale precise lateral and vertical site registration between the QDs and the In nanocrystals and arrays in a single self-organizing formation process. The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum.

  6. Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

    Energy Technology Data Exchange (ETDEWEB)

    Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M. [Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Tang, K.; Ahn, J.; McIntyre, P. C. [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-08-07

    The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

  7. Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

    International Nuclear Information System (INIS)

    Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T; Song, A M

    2009-01-01

    In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

  8. Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

    Energy Technology Data Exchange (ETDEWEB)

    Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T [Departamento de Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain); Song, A M, E-mail: indy@usal.e [School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD (United Kingdom)

    2009-11-15

    In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

  9. Shot-Noise-Limited Dual-Beam Detector for Atmospheric Trace-Gas Monitoring with Near-Infrared Diode Lasers

    Science.gov (United States)

    Durry, Georges; Pouchet, Ivan; Amarouche, Nadir; Danguy, Théodore; Megie, Gerard

    2000-10-01

    A dual-beam detector is used to measure atmospheric trace species by differential absorption spectroscopy with commercial near-infrared InGaAs laser diodes. It is implemented on the Spectrom tre Diodes Laser Accordables, a balloonborne tunable diode laser spectrometer devoted to the in situ monitoring of CH 4 and H 2 O. The dual-beam detector is made of simple analogical subtractor circuits combined with InGaAs photodiodes. The detection strategy consists in taking the balanced analogical difference between the reference and the sample signals detected at the input and the output of an open optical multipass cell to apply the full dynamic range of the measurements (16 digits) to the weak molecular absorption information. The obtained sensitivity approaches the shot-noise limit. With a 56-m optical cell, the detection limit obtained when the spectra is recorded within 8 ms is 10 4 (expressed in absorbance units). The design and performances of both a simple substractor and an upgraded feedback substractor circuit are discussed with regard to atmospheric in situ CH 4 absorption spectra measured in the 1.653- m region. Mixing ratios are obtained from the absorption spectra by application of a nonlinear least-squares fit to the full molecular line shape in conjunction with in situ P and T measurements.

  10. Tunable, diode side-pumped Er:YAG laser

    Science.gov (United States)

    Hamilton, C.E.; Furu, L.H.

    1997-04-22

    A discrete-element Er:YAG laser, side pumped by a 220 Watt peak-power InGaAs diode array, generates >500 mWatts at 2.94 {micro}m, and is tunable over a 6 nm range near about 2.936 {micro}m. The oscillator is a plano-concave resonator consisting of a concave high reflector, a flat output coupler, a Er:YAG crystal and a YAG intracavity etalon, which serves as the tuning element. The cavity length is variable from 3 cm to 4 cm. The oscillator uses total internal reflection in the Er:YAG crystal to allow efficient coupling of the diode emission into the resonating modes of the oscillator. With the tuning element removed, the oscillator produces up to 1.3 Watts of average power at 2.94 {micro}m. The duty factor of the laser is 6.5% and the repetition rate is variable up to 1 kHz. This laser is useful for tuning to an atmospheric transmission window at 2.935 {micro}m (air wavelength). The laser is also useful as a spectroscopic tool because it can access several infrared water vapor transitions, as well as transitions in organic compounds. Other uses include medical applications (e.g., for tissue ablation and uses with fiber optic laser scalpels) and as part of industrial effluent monitoring systems. 4 figs.

  11. Laser Technology.

    Science.gov (United States)

    Gauger, Robert

    1993-01-01

    Describes lasers and indicates that learning about laser technology and creating laser technology activities are among the teacher enhancement processes needed to strengthen technology education. (JOW)

  12. Ultrafast laser-semiconductor interactions

    International Nuclear Information System (INIS)

    Schile, L.A.

    1996-01-01

    Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

  13. Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

    International Nuclear Information System (INIS)

    Chang, S.J.; Yu, H.C.; Su, Y.K.; Chen, I.L.; Lee, T.D.; Lu, C.M.; Chiou, C.H.; Lee, Z.H.; Yang, H.P.; Sung, C.P.

    2005-01-01

    Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance

  14. Burr formation detector for fiber laser cutting based on a photodiode sensor system

    Science.gov (United States)

    Schleier, Max; Adelmann, Benedikt; Neumeier, Benedikt; Hellmann, Ralf

    2017-11-01

    We report a unique sensor system based on a InGaAs photodiode to detect the formation of burr during near infrared fiber laser cutting. The sensor approach encompasses the measurement of the thermal radiation form the process zone, optical filtering, digitalized sampling at 20 kHz, digital filtering using an elliptical band-pass filter 12th order and calculation of the standard deviation. We find a linear correlation between the deduced sensor signal and the generated burr height with this functionality being experimentally confirmed for laser cutting of mild and stainless steel of different thicknesses. The underlying mechanism of this transducer concept is attributed to the melt flow dynamics inside the cut kerf.

  15. Effect of natural homointerfaces on the magnetic properties of pseudomorphic La0.7Sr0.3MnO3 thin film: Phase separation vs split domain structure

    International Nuclear Information System (INIS)

    Congiu, Francesco; Sanna, Carla; Maritato, Luigi; Orgiani, Pasquale; Geddo Lehmann, Alessandra

    2016-01-01

    We studied the effect of naturally formed homointerfaces on the magnetic and electric transport behavior of a heavily twinned, 40 nm thick, pseudomorphic epitaxial film of La 0.7 Sr 0.3 MnO 3 deposited by molecular beam epitaxy on ferroelastic LaAlO 3 (001) substrate. As proved by high resolution X-ray diffraction analysis, the lamellar twin structure of the substrate is imprinted in La 0.7 Sr 0.3 MnO 3 . In spite of the pronounced thermomagnetic irreversibility in the DC low field magnetization, spin-glass-like character, possibly related to the structural complexity, was ruled out, on the base of AC susceptibility results. The magnetic characterization indicates anisotropic ferromagnetism, with a saturation magnetization M s = 3.2 μ B /Mn, slightly reduced with respect to the fully polarized value of 3.7 μ B /Mn. The low field DC magnetization vs temperature is non bulklike, with a two step increase in the field cooled M FC (T) branch and a two peak structure in the zero field cooled M ZFC (T) one. Correspondingly, two peaks are present in the resistivity vs temperature ρ(T) curve. With reference to the behavior of epitaxial manganites deposited on bicrystal substrates, results are discussed in terms of a two phase model, in which each couple of adjacent ferromagnetic twin cores, with bulklike T C = 370 K, is separated by a twin boundary with lower Curie point T C = 150 K, acting as barrier for spin polarized transport. The two phase scenario is compared with the alternative one based on a single ferromagnetic phase with the peculiar ferromagnetic domains structure inherent to twinned manganites films, reported to be split into interconnected and spatially separated regions with in-plane and out-of-plane magnetization, coinciding with twin cores and twin boundaries respectively.

  16. Effect of natural homointerfaces on the magnetic properties of pseudomorphic La0.7Sr0.3MnO3 thin film: Phase separation vs split domain structure

    Science.gov (United States)

    Congiu, Francesco; Sanna, Carla; Maritato, Luigi; Orgiani, Pasquale; Geddo Lehmann, Alessandra

    2016-12-01

    We studied the effect of naturally formed homointerfaces on the magnetic and electric transport behavior of a heavily twinned, 40 nm thick, pseudomorphic epitaxial film of La0.7Sr0.3MnO3 deposited by molecular beam epitaxy on ferroelastic LaAlO3(001) substrate. As proved by high resolution X-ray diffraction analysis, the lamellar twin structure of the substrate is imprinted in La0.7Sr0.3MnO3. In spite of the pronounced thermomagnetic irreversibility in the DC low field magnetization, spin-glass-like character, possibly related to the structural complexity, was ruled out, on the base of AC susceptibility results. The magnetic characterization indicates anisotropic ferromagnetism, with a saturation magnetization Ms = 3.2 μB/Mn, slightly reduced with respect to the fully polarized value of 3.7 μB/Mn. The low field DC magnetization vs temperature is non bulklike, with a two step increase in the field cooled MFC(T) branch and a two peak structure in the zero field cooled MZFC(T) one. Correspondingly, two peaks are present in the resistivity vs temperature ρ(T) curve. With reference to the behavior of epitaxial manganites deposited on bicrystal substrates, results are discussed in terms of a two phase model, in which each couple of adjacent ferromagnetic twin cores, with bulklike TC = 370 K, is separated by a twin boundary with lower Curie point TC = 150 K, acting as barrier for spin polarized transport. The two phase scenario is compared with the alternative one based on a single ferromagnetic phase with the peculiar ferromagnetic domains structure inherent to twinned manganites films, reported to be split into interconnected and spatially separated regions with in-plane and out-of-plane magnetization, coinciding with twin cores and twin boundaries respectively.

  17. High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Sanz-Hervas, A.; Aguilar, M. [Madrid, Univ. (Spain). Dept. Tecnologia Electronica. E.T.S.I. Telecomunicacion; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J. [Valladolid, Real de Burgos Univ. (Spain). Dept. Teoria de la Senal u Comunicaciones e Ingegneria Telematica. E.T.S.I. Telecomunicacion; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E. [Madrid, Univ. (Spain). Dept. Ingegnieria Electronica. E.T.S.I. Telecomunicacion

    1997-02-01

    In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224{+-} reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies.

  18. High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

    International Nuclear Information System (INIS)

    Sanz-Hervas, A.; Aguilar, M.; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J.; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E.

    1997-01-01

    In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224± reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies

  19. Mid-infrared two-photon absorption in an extended-wavelength InGaAs photodetector

    Science.gov (United States)

    Piccardo, Marco; Rubin, Noah A.; Meadowcroft, Lauren; Chevalier, Paul; Yuan, Henry; Kimchi, Joseph; Capasso, Federico

    2018-01-01

    We investigate the nonlinear optical response of a commercial extended-wavelength In0.81Ga0.19As uncooled photodetector. Degenerate two-photon absorption in the mid-infrared range is observed using a quantum cascade laser emitting at λ = 4.5 μm as the excitation source. From the measured two-photon photocurrent signal, we extract a two-photon absorption coefficient β(2) = 0.6 ± 0.2 cm/MW, in agreement with the theoretical value obtained from the Eg-3 scaling law. Considering the wide spectral range covered by extended-wavelength InxGa1-xAs alloys, this result holds promise for applications based on two-photon absorption for this family of materials at wavelengths between 1.8 and 5.6 μm.

  20. Measurement of a heavy-hole hyperfine interaction in InGaAs quantum dots using resonance fluorescence.

    Science.gov (United States)

    Fallahi, P; Yilmaz, S T; Imamoğlu, A

    2010-12-17

    We measure the strength and the sign of hyperfine interaction of a heavy hole with nuclear spins in single self-assembled quantum dots. Our experiments utilize the locking of a quantum dot resonance to an incident laser frequency to generate nuclear spin polarization. By monitoring the resulting Overhauser shift of optical transitions that are split either by electron or exciton Zeeman energy with respect to the locked transition using resonance fluorescence, we find that the ratio of the heavy-hole and electron hyperfine interactions is -0.09 ± 0.02 in three quantum dots. Since hyperfine interactions constitute the principal decoherence source for spin qubits, we expect our results to be important for efforts aimed at using heavy-hole spins in quantum information processing.

  1. Effect of natural homointerfaces on the magnetic properties of pseudomorphic La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin film: Phase separation vs split domain structure

    Energy Technology Data Exchange (ETDEWEB)

    Congiu, Francesco [Dipartimento di Fisica e CNISM, Università di Cagliari, S.P. Monserrato-Sestu, km 0.700, I 09042 Monserrato, Cagliari (Italy); Sanna, Carla [Sardegna Ricerche, Laboratorio Energetica Elettrica, VI Strada Ovest - Z.I.Macchiareddu, I 09010 Uta, Cagliari (Italy); Maritato, Luigi [CNR-SPIN, UOS Salerno, I 84084 Fisciano, Salerno (Italy); Dipartimento di Ingegneria dell’Informazione, Ingegneria Elettrica e Matematica Applicata, Università di Salerno, I 84084 Fisciano, Salerno (Italy); Orgiani, Pasquale [CNR-SPIN, UOS Salerno, I 84084 Fisciano, Salerno (Italy); Geddo Lehmann, Alessandra, E-mail: lehmann@dsf.unica.it [Dipartimento di Fisica e CNISM, Università di Cagliari, S.P. Monserrato-Sestu, km 0.700, I 09042 Monserrato, Cagliari (Italy)

    2016-12-15

    We studied the effect of naturally formed homointerfaces on the magnetic and electric transport behavior of a heavily twinned, 40 nm thick, pseudomorphic epitaxial film of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} deposited by molecular beam epitaxy on ferroelastic LaAlO{sub 3}(001) substrate. As proved by high resolution X-ray diffraction analysis, the lamellar twin structure of the substrate is imprinted in La{sub 0.7}Sr{sub 0.3}MnO{sub 3}. In spite of the pronounced thermomagnetic irreversibility in the DC low field magnetization, spin-glass-like character, possibly related to the structural complexity, was ruled out, on the base of AC susceptibility results. The magnetic characterization indicates anisotropic ferromagnetism, with a saturation magnetization M{sub s} = 3.2 μ{sub B}/Mn, slightly reduced with respect to the fully polarized value of 3.7 μ{sub B}/Mn. The low field DC magnetization vs temperature is non bulklike, with a two step increase in the field cooled M{sub FC}(T) branch and a two peak structure in the zero field cooled M{sub ZFC}(T) one. Correspondingly, two peaks are present in the resistivity vs temperature ρ(T) curve. With reference to the behavior of epitaxial manganites deposited on bicrystal substrates, results are discussed in terms of a two phase model, in which each couple of adjacent ferromagnetic twin cores, with bulklike T{sub C} = 370 K, is separated by a twin boundary with lower Curie point T{sub C} = 150 K, acting as barrier for spin polarized transport. The two phase scenario is compared with the alternative one based on a single ferromagnetic phase with the peculiar ferromagnetic domains structure inherent to twinned manganites films, reported to be split into interconnected and spatially separated regions with in-plane and out-of-plane magnetization, coinciding with twin cores and twin boundaries respectively.

  2. Blue-green ZnSe lasers with a new type of active region

    International Nuclear Information System (INIS)

    Ivanov, S.V.; Toropov, A.A.; Sorokin, S.V.; Shubina, T.V.; Sedova, I.V.; Kop'ev, P.S.; Alferov, Zh.I.; Waag, A.; Lugauer, H.J.; Reuscher, G.; Keim, M.; Fischer, F.F.; Landwehr, G.

    1999-01-01

    We report the results of an experimental study of molecular-beam epitaxy of ZnSe-based laser heterostructures with a new structure of the active region, which contains a fractional-monolayer CdSe recombination region in an expanded ZnSe quantum well and a waveguide based on a variably-strained, short-period superlattice are reported. Growth of a fractional-monolayer CdSe region with a nominal thickness of 2-3 ML, i.e., less than the critical thickness, on a ZnSe surface (Δa/a∼7%) leads to the formation of self-organized, pseudomorphic, CdSe-enriched islands with lateral dimensions ∼10-30 nm and density ∼2x10 10 cm -2 , which serve as efficient centers of carrier localization, giving rise to effective spatial separation of defective regions and regions of radiative recombination and, as a result, a higher quantum efficiency. Laser structures for optical pumping in the (Zn, Mg) (S, Se) system with a record-low threshold power density (less than 4 kW/cm 2 at 300 K) and continuous-wave laser diodes in the system (Be, Mg, Zn) Se with a 2.5 to 2.8-ML-thick, fractional-monolayer CdSe active region have been obtained. The laser structures and diodes have an improved degradation resistance

  3. Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.

    Science.gov (United States)

    Mintairov, S A; Kalyuzhnyy, N A; Lantratov, V M; Maximov, M V; Nadtochiy, A M; Rouvimov, Sergei; Zhukov, A E

    2015-09-25

    Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively.

  4. Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Rybalchenko, D. V.; Mintairov, S. A.; Salii, R. A.; Shvarts, M. Z.; Timoshina, N. Kh.; Kalyuzhnyy, N. A., E-mail: nickk@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    Metamorphic Ga{sub 0.76}In{sub 0.24}As heterostructures for photovoltaic converters are grown by the MOCVD (metal–organic chemical vapor deposition) technique. It is found that, due to the valence-band offset at the p-In{sub 0.24}Al{sub 0.76}As/p-In{sub 0.24}Ga{sub 0.76}As (wide-gap window/emitter) heterointerface, a potential barrier for holes arises as a result of a low carrier concentration in the wide-gap material. The use of an InAlGaAs solid solution with an Al content lower than 40% makes it possible to raise the hole concentration in the widegap window up ~9 × 10{sup 18} cm{sup –3} and completely remove the potential barrier, thereby reducing the series resistance of the device. The parameters of an GaInAs metamorphic buffer layer with a stepwise In content profile are calculated and its epitaxial growth conditions are optimized, which improves carrier collection from the n-GaInAs base region and provides a quantum efficiency of 83% at a wavelength of 1064 nm. Optimization of the metamorphic heterostructure of the photovoltaic converter results in that its conversion efficiency for laser light with a wavelength of 1064 nm is 38.5%.

  5. Electro-optically Induced and Manipulated Terahertz Waves from Fe-doped InGaAs Surfaces

    Science.gov (United States)

    Hatem, O.

    2018-03-01

    We demonstrate the presence of dual simultaneous nonlinear mechanisms: field-induced optical rectification (FIOR) and field-induced surge current (FISC) for the generation of terahertz (THz) pulses from p-type and n-type Fe:In0.53Ga0.47As surfaces upon excitation with femtosecond laser pulses centered at 800 nm wavelength. Experimental investigations of the dependence of the generated THz waves on the incident angular optical polarization, optical irradiance, and the direction and magnitude of applied electric DC fields give confirming results to the proposed THz generation mechanisms. Applying external DC electric fields in the plane of the incident optical field shows efficient capability in manipulating the direction and phase of the generated THz waves, and controlling the refractive index of Fe:In0.53Ga0.47As material in the THz range, in addition to enhancing the emitted THz power up to two orders of magnitude. The fast and reliable response of Fe:In0.53Ga0.47As to the changes in the direction and magnitude of the optical and electrical fields suggests its use in amplitude and phase modulators, and ultrafast optoelectronic systems.

  6. The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

    International Nuclear Information System (INIS)

    Kent, Tyler; Edmonds, Mary; Kummel, Andrew C.; Tang, Kechao; Negara, Muhammad Adi; McIntyre, Paul; Chobpattana, Varistha; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi

    2015-01-01

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C max hypothesized to be a result of poor nucleation of HfO 2 on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D it high C ox MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared

  7. C-RED One and C-RED2: SWIR high-performance cameras using Saphira e-APD and Snake InGaAs detectors

    Science.gov (United States)

    Gach, Jean-Luc; Feautrier, Philippe; Stadler, Eric; Clop, Fabien; Lemarchand, Stephane; Carmignani, Thomas; Wanwanscappel, Yann; Boutolleau, David

    2018-02-01

    After the development of the OCAM2 EMCCD fast visible camera dedicated to advanced adaptive optics wavefront sensing, First Light Imaging moved to the SWIR fast cameras with the development of the C-RED One and the C-RED 2 cameras. First Light Imaging's C-RED One infrared camera is capable of capturing up to 3500 full frames per second with a subelectron readout noise and very low background. C-RED One is based on the last version of the SAPHIRA detector developed by Leonardo UK. This breakthrough has been made possible thanks to the use of an e-APD infrared focal plane array which is a real disruptive technology in imagery. C-RED One is an autonomous system with an integrated cooling system and a vacuum regeneration system. It operates its sensor with a wide variety of read out techniques and processes video on-board thanks to an FPGA. We will show its performances and expose its main features. In addition to this project, First Light Imaging developed an InGaAs 640x512 fast camera with unprecedented performances in terms of noise, dark and readout speed based on the SNAKE SWIR detector from Sofradir. The camera was called C-RED 2. The C-RED 2 characteristics and performances will be described. The C-RED One project has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement N° 673944. The C-RED 2 development is supported by the "Investments for the future" program and the Provence Alpes Côte d'Azur Region, in the frame of the CPER.

  8. Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

    Science.gov (United States)

    Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

    2005-01-01

    In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

  9. The Newest Laser Processing

    International Nuclear Information System (INIS)

    Lee, Baek Yeon

    2007-01-01

    This book mentions laser processing with laser principle, laser history, laser beam property, laser kinds, foundation of laser processing such as laser oscillation, characteristic of laser processing, laser for processing and its characteristic, processing of laser hole including conception of processing of laser hole and each material, and hole processing of metal material, cut of laser, reality of cut, laser welding, laser surface hardening, application case of special processing and safety measurement of laser.

  10. Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots

    International Nuclear Information System (INIS)

    Norris, T B; Kim, K; Urayama, J; Wu, Z K; Singh, J; Bhattacharya, P K

    2005-01-01

    We have used two- and three-pulse femtosecond differential transmission spectroscopy to study the dependence of quantum dot carrier dynamics on temperature. At low temperatures and densities, the rates for relaxation between the quantum dot confined states and for capture from the barrier region into the various dot levels could be directly determined. For electron-hole pairs generated directly in the quantum dot excited state, relaxation is dominated by electron-hole scattering, and occurs on a 5 ps time scale. Capture times from the barrier into the quantum dot are of the order of 2 ps (into the excited state) and 10 ps (into the ground state). The phonon bottleneck was clearly observed in low-density capture experiments, and the conditions for its observation (namely, the suppression of electron-hole scattering for nongeminately captured electrons) were determined. As temperature increases beyond about 100 K, the dynamics become dominated by the re-emission of carriers from the lower dot levels, due to the large density of states in the wetting layer and barrier region. Measurements of the gain dynamics show fast (130 fs) gain recovery due to intradot carrier-carrier scattering, and picosecond-scale capture. Direct measurement of the transparency density versus temperature shows the dramatic effect of carrier re-emission for the quantum dots on thermally activated scattering. The carrier dynamics at elevated temperature are thus strongly dominated by the high density of the high energy continuum states relative to the dot confined levels. Deleterious hot carrier effects can be suppressed in quantum dot lasers by resonant tunnelling injection

  11. High quality long-wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine

    International Nuclear Information System (INIS)

    Miller, B.I.; Young, M.G.; Oron, M.; Koren, U.; Kisker, D.

    1990-01-01

    High quality long-wavelength InGaAsP/InP lasers were grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine (TBA) as a substitute for AsH 3 . Electrical and photoluminescence measurements on InGaAs and InGaAsP showed that TBA-grown material was at least as good as AsH 3 material in terms of suitability for lasers. From two wafers grown by TBA, current thresholds I th as low as 11 mA were obtained for a 2-μm-wide semi-insulating blocking planar buried heterostructure laser lasing near 1.3 μm wavelength. The differential quantum efficiencies η D were as high as 21%/facet with a low internal loss α=21 cm -1 . In addition I th as low as 18 mA and η D as high as 18% have been obtained for multiplequantum well lasers at 1.54 μm wavelength. These results show that TBA might be used to replace AsH 3 without compromising on laser performance

  12. [A Methane Detection System Using Distributed Feedback Laser at 1 654 nm].

    Science.gov (United States)

    Li, Bin; Liu, Hui-fang; He, Qi-xin; Zhai, Bing; Pan, Jiao-qing; Zheng, Chuan-tao; Wang, Yi-ding

    2016-01-01

    A methane (CH4) detection system based on tunable diode laser absorption spectroscopy (TDLAS) technique was experimentally demonstrated. A distributed feedback (DFB) laser around 1 654 nm, an open reflective sensing probe and two InGaAs photodiodes were adopted in the system. The electrical part of the system mainly includes the laser temperature control & modulation module and the orthogonal lock-in amplifier module. Temperature and spectrum tests on the DFB laser indicate that, the laser temperature fluctuation can be limited to the range of -0.02-0.02 degrees C, the laser's emitting wavelength varies linearly with the temperature and injection current, and also good operation stability of the laser was observed through experiments. Under a constant working temperature, the center wavelength of the laser is varied linearly by adjusting the driving current. Meanwhile, a 5 kHz sine wave signal and a 10 Hz saw wave signal were provided by the driving circuit for the harmonic extraction purpose. The developed orthogonal lock-in amplifier can extract the If and 2f harmonic signals with the extraction error of 3.55% and 5% respectively. By using the open optical probe, the effective optical pass length was doubled to 40 cm. Gas detection experiment was performed to derive the relation between the harmonic amplitude and the gas concentration. As the concentration increases from 1% to 5%, the amplitudes of the 1f harmonic and the 2f harmonic signal were obtained, and good linear ration between the concentration and the amplitude ratio was observed, which proves the normal function of the developed detection system. This system is capable to detect other trace gases by using relevant DFB lasers.

  13. Near-IR imaging of thermal changes in enamel during laser ablation

    Science.gov (United States)

    Maung, Linn H.; Lee, Chulsung; Fried, Daniel

    2010-02-01

    The objective of this work was to observe the various thermal-induced optical changes that occur in the near-infrared (NIR) during drilling in dentin and enamel with the laser and the high-speed dental handpiece. Tooth sections of ~ 3 mm-thickness were prepared from extracted human incisors (N=60). Samples were ablated with a mechanically scanned CO2 laser operating at a wavelength of 9.3-μm, a 300-Hz laser pulse repetition rate, and a laser pulse duration of 10-20 μs. An InGaAs imaging camera was used to acquire real-time NIR images at 1300-nm of thermal and mechanical changes (cracks). Enamel was rapidly removed by the CO2 laser without peripheral thermal damage by mechanically scanning the laser beam while a water spray was used to cool the sample. Comparison of the peripheral thermal and mechanical changes produced while cutting with the laser and the high-speed hand-piece suggest that enamel and dentin can be removed at high speed by the CO2 laser without excessive peripheral thermal or mechanical damage. Only 2 of the 15 samples ablated with the laser showed the formation of small cracks while 9 out of 15 samples exhibited crack formation with the dental hand-piece. The first indication of thermal change is a decrease in transparency due to loss of the mobile water from pores in the enamel which increase lightscattering. To test the hypothesis that peripheral thermal changes were caused by loss of mobile water in the enamel, thermal changes were intentionally induced by heating the surface. The mean attenuation coefficient of enamel increased significantly from 2.12 +/- 0.82 to 5.08 +/- 0.98 with loss of mobile water due to heating.

  14. MT6425CA: a 640 X 512-25μm CTIA ROIC for SWIR InGaAs detector arrays

    Science.gov (United States)

    Eminoglu, Selim; Mahsereci, Yigit Uygar; Altiner, Caglar; Akin, Tayfun

    2012-06-01

    This paper reports the development of a new CTIA ROIC (MT6425CA) suitable for SWIR InGaAs detector arrays. MT6425CA has a format of 640 × 512 with a pixel pitch of 25 μm and has a system-on-chip architecture, where all the critical timing and biasing for this ROIC are generated by programmable blocks on-chip. MT6425CA is a highly configurable and flexible ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. The ROIC runs on 3.3V supply voltage at nominal clock speed of 10 MHz clock. It performs snapshot operation both using Integrate-Then-Read (ITR) and Integrate-While- Read (IWR) modes. The CTIA type pixel input circuitry has a full-well-capacity (FWC) of about 320,000e-, with an input referred read noise of less than 110e- at 300K. MT6425CA has programmable number of outputs, where 4, 2, or 1 output can be selected along with an analog reference for pseudo-differential operation. The integration time can be programmed up to 1s in steps of 0.1μs. The gain and offset in the ROIC can be programmed to adjust the output offset and voltage swing. ROIC dissipates less than 130mW from a 3.3V supply at full speed and full frame size with 4 outputs, providing both low-power and low-noise operation. MT6425CA is fabricated using a modern mixed-signal CMOS process on 200mm CMOS wafers with a high yield above 75%, yielding more than 50 working parts per wafer. It has been silicon verified, and tested parts are available either in wafer and die levels with a complete documentation including test reports and wafer maps. A USB based camera electronics and camera development platform with software are available to help customers to evaluate the imaging performance of MT6425CA in a fast and efficient way.

  15. Laser Therapy

    Science.gov (United States)

    ... for Every Season How to Choose the Best Skin Care Products In This Section Dermatologic Surgery What is dermatologic ... for Every Season How to Choose the Best Skin Care Products Laser Resurfacing Uses for Laser Resurfacing Learn more ...

  16. Lasers technology

    International Nuclear Information System (INIS)

    2014-01-01

    The Laser Technology Program of IPEN is developed by the Center for Lasers and Applications (CLA) and is committed to the development of new lasers based on the research of new optical materials and new resonator technologies. Laser applications and research occur within several areas such as Nuclear, Medicine, Dentistry, Industry, Environment and Advanced Research. Additional goals of the Program are human resource development and innovation, in association with Brazilian Universities and commercial partners

  17. YCOB lasers

    International Nuclear Information System (INIS)

    Richardson, Martin; Hammons, Dennis; Eichenholz, Jason; Chai, Bruce; Ye, Qing; Jang, Won; Shah, Lawrence

    1999-01-01

    We review new developments with a new laser host material, YCa 4 O(BO 3 ) 3 or YCOB. Lasers based on this host material will open new opportunities for the development of compact, high-power, frequency-agile visible and near IR laser sources, as well as sources for ultrashort pulses. Efficient diode-pumped laser action with both Nd-doped and Yb-doped YCOB has already been demonstrated. Moreover, since these materials are biaxial, and have high nonlinear optical coefficients, they have become the first laser materials available as efficient self-frequency-doubled lasers, capable of providing tunable laser emission in several regions of the visible spectrum. Self-frequency doubling eliminates the need for inclusion of a nonlinear optical element within or external to the laser resonator. These laser materials possess excellent thermal and optical properties, have high laser-damage thresholds, and can be grown to large sizes. In addition they are non-hygroscopic. They therefore possess all the characteristics necessary for laser materials required in rugged, compact systems. Here we summarize the rapid progress made in the development of this new class of lasers, and review their potential for a number of applications. (author)

  18. Laser sampling

    International Nuclear Information System (INIS)

    Gorbatenko, A A; Revina, E I

    2015-01-01

    The review is devoted to the major advances in laser sampling. The advantages and drawbacks of the technique are considered. Specific features of combinations of laser sampling with various instrumental analytical methods, primarily inductively coupled plasma mass spectrometry, are discussed. Examples of practical implementation of hybrid methods involving laser sampling as well as corresponding analytical characteristics are presented. The bibliography includes 78 references

  19. HF laser

    International Nuclear Information System (INIS)

    Suzuki, Kazuya; Iwasaki, Matae

    1977-01-01

    A review is made of the research and development of HF chemical laser and its related work. Many gaseous compounds are used as laser media successfully; reaction kinetics and technological problems are described. The hybrid chemical laser of HF-CO 2 system and the topics related to the isotope separation are also included. (auth.)

  20. Analysis of self-organized In(Ga)As quantum structures with the scanning transmission electron microscope; Analyse selbstorganisierter In(Ga)As-Quantenstrukturen mit dem Raster-Transmissionselektronenmikroskop

    Energy Technology Data Exchange (ETDEWEB)

    Sauerwald, Andres

    2008-05-27

    Aim of this thesis was to apply the analytical methods of the scanning transmission electron microscopy to the study of self-organized In(Ga)As quantum structures. With the imaging methods Z contrast and bright field (position resolutions in the subnanometer range) and especially with the possibilities of the quantitative chemical EELS analysis of the scanning transmission electron microscope (STEM) fundamental questions concerning morphology and chemical properties of self-organized quantum structures should be answered. By the high position resolution of the STEM among others essentail morphological and structural parameters in the growth behaviour of 'dot in a well' (DWell) structures and of vertically correlated quantum dots (QDs) could be analyzed. For the optimization of DWell structures samples were studied, the nominal InAs-QD growth position was directedly varied within the embedding InGaAs quantum wells. The STEM offers in connection with the EELS method a large potential for the chemical analysis of quantum structures. Studied was a sample series of self-organized InGaAs/GaAs structures on GaAs substrate, the stress of which was changed by varying the Ga content of the INGaAs material between 2.4 % and 4.3 %. [German] Ziel dieser Arbeit war es, die analytischen Methoden der Raster-Transmissionselektronenmikroskopie zur Untersuchung selbstorganisierter In(Ga)As-Quantenstrukturen anzuwenden. Mit den abbildenden Methoden Z-Kontrast und Hellfeld (Ortsaufloesungen im Subnanometerbereich) und insbesondere mit den Moeglichkeiten der quantitativen chemischen EELS-Analyse des Raster-Transmissionselektronenmikroskops (RTEMs) sollten grundsaetzliche Fragestellungen hinsichtlich der Morphologie und der chemischen Eigenschaften selbstorganisierter Quantenstrukturen beantwortet werden. Durch die hohe Ortsaufloesung des RTEMs konnten u.a. essentielle morphologische und strukturelle Parameter im Wachstumsverhalten von 'Dot in a Well

  1. Anisotropic Transport of Electrons in a Novel FET Channel with Chains of InGaAs Nano-Islands Embedded along Quasi-Periodic Multi-Atomic Steps on Vicinal (111)B GaAs

    International Nuclear Information System (INIS)

    Akiyama, Y.; Kawazu, T.; Noda, T.; Sakaki, H.

    2010-01-01

    We have studied electron transport in n-AlGaAs/GaAs heterojunction FET channels, in which chains of InGaAs nano-islands are embedded along quasi-periodic steps. By using two samples, conductance G para (V g ) parallel to the steps and G perp (V g ) perpendicular to them were measured at 80 K as functions of gate voltage V g . At sufficiently high V g , G para at 80 K is several times as high as G perp , which manifests the anisotropic two-dimensional transport of electrons. When V g is reduced to -0.7 V, G perp almost vanishes, while Gpara stays sizable unless V g is set below -0.8 V. These results indicate that 'inter-chain' barriers play stronger roles than 'intra-chain' barriers.

  2. Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain

    International Nuclear Information System (INIS)

    Kim, Jeonghee; Laurent, Matthew A.; Li, Haoran; Lal, Shalini; Mishra, Umesh K.

    2015-01-01

    This letter reports the influence of the added InGaN interlayer on reducing the inherent interfacial barrier and hence improving the electrical characteristics of wafer-bonded current aperture vertical electron transistors consisting of an InGaAs channel and N-polar GaN drain. The current-voltage characteristics of the transistors show that the implementation of N-polar InGaN interlayer effectively reduces the barrier to electron transport across the wafer-bonded interface most likely due to its polarization induced downward band bending, which increases the electron tunneling probability. Fully functional wafer-bonded transistors with nearly 600 mA/mm of drain current at V GS  = 0 V and L go  = 2 μm have been achieved, and thus demonstrate the feasibility of using wafer-bonded heterostructures for applications that require active carrier transport through both materials

  3. Laser fusion

    International Nuclear Information System (INIS)

    Eliezer, S.

    1982-02-01

    In this paper, the physics of laser fusion is described on an elementary level. The irradiated matter consists of a dense inner core surrounded by a less dense plasma corona. The laser radiation is mainly absorbed in the outer periphery of the plasma. The absorbed energy is transported inward to the ablation surface where plasma flow is created. Due to this plasma flow, a sequence of inward going shock waves and heat waves are created, resulting in the compression and heating of the core to high density and temperature. The interaction physics between laser and matter leading to thermonuclear burn is summarized by the following sequence of events: Laser absorption → Energy transport → Compression → Nuclear Fusion. This scenario is shown in particular for a Nd:laser with a wavelength of 1 μm. The wavelength scaling of the physical processes is also discussed. In addition to the laser-plasma physics, the Nd high power pulsed laser is described. We give a very brief description of the oscillator, the amplifiers, the spatial filters, the isolators and the diagnostics involved. Last, but not least, the concept of reactors for laser fusion and the necessary laser system are discussed. (author)

  4. Biocavity Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Gourley, P.L.; Gourley, M.F.

    2000-10-05

    Laser technology has advanced dramatically and is an integral part of today's healthcare delivery system. Lasers are used in the laboratory analysis of human blood samples and serve as surgical tools that kill, burn or cut tissue. Recent semiconductor microtechnology has reduced the size o f a laser to the size of a biological cell or even a virus particle. By integrating these ultra small lasers with biological systems, it is possible to create micro-electrical mechanical systems that may revolutionize health care delivery.

  5. High power lasers & systems

    OpenAIRE

    Chatwin, Chris; Young, Rupert; Birch, Philip

    2015-01-01

    Some laser history;\\ud Airborne Laser Testbed & Chemical Oxygen Iodine Laser (COIL);\\ud Laser modes and beam propagation;\\ud Fibre lasers and applications;\\ud US Navy Laser system – NRL 33kW fibre laser;\\ud Lockheed Martin 30kW fibre laser;\\ud Conclusions

  6. Continuous wave power scaling in high power broad area quantum cascade lasers

    Science.gov (United States)

    Suttinger, M.; Leshin, J.; Go, R.; Figueiredo, P.; Shu, H.; Lyakh, A.

    2018-02-01

    Experimental and model results for high power broad area quantum cascade lasers are presented. Continuous wave power scaling from 1.62 W to 2.34 W has been experimentally demonstrated for 3.15 mm-long, high reflection-coated 5.6 μm quantum cascade lasers with 15 stage active region for active region width increased from 10 μm to 20 μm. A semi-empirical model for broad area devices operating in continuous wave mode is presented. The model uses measured pulsed transparency current, injection efficiency, waveguide losses, and differential gain as input parameters. It also takes into account active region self-heating and sub-linearity of pulsed power vs current laser characteristic. The model predicts that an 11% improvement in maximum CW power and increased wall plug efficiency can be achieved from 3.15 mm x 25 μm devices with 21 stages of the same design but half doping in the active region. For a 16-stage design with a reduced stage thickness of 300Å, pulsed roll-over current density of 6 kA/cm2 , and InGaAs waveguide layers; optical power increase of 41% is projected. Finally, the model projects that power level can be increased to 4.5 W from 3.15 mm × 31 μm devices with the baseline configuration with T0 increased from 140 K for the present design to 250 K.

  7. Accelerated aging tests of radiation damaged lasers and photodiodes for the CMS tracker optical links

    CERN Document Server

    Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

    1999-01-01

    The combined effects of radiation damage and accelerated ageing in COTS lasers and p-i-n photodiodes are presented. Large numbers of these devices are employed in future High Energy Physics experiments and it is vital that these devices are confirmed to be sufficiently robust in terms of both radiation resistance and reliability. Forty 1310 nm InGaAsP edge-emitting lasers (20 irradiated) and 30 InGaAs p- i-n photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C with periodic measurements made of laser threshold and efficiency, in addition to p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout- related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (13 refs).

  8. Photodiode-based cutting interruption sensor for near-infrared lasers.

    Science.gov (United States)

    Adelmann, B; Schleier, M; Neumeier, B; Hellmann, R

    2016-03-01

    We report on a photodiode-based sensor system to detect cutting interruptions during laser cutting with a fiber laser. An InGaAs diode records the thermal radiation from the process zone with a ring mirror and optical filter arrangement mounted between a collimation unit and a cutting head. The photodiode current is digitalized with a sample rate of 20 kHz and filtered with a Chebyshev Type I filter. From the measured signal during the piercing, a threshold value is calculated. When the diode signal exceeds this threshold during cutting, a cutting interruption is indicated. This method is applied to sensor signals from cutting mild steel, stainless steel, and aluminum, as well as different material thicknesses and also laser flame cutting, showing the possibility to detect cutting interruptions in a broad variety of applications. In a series of 83 incomplete cuts, every cutting interruption is successfully detected (alpha error of 0%), while no cutting interruption is reported in 266 complete cuts (beta error of 0%). With this remarkable high detection rate and low error rate, the possibility to work with different materials and thicknesses in combination with the easy mounting of the sensor unit also to existing cutting machines highlight the enormous potential for this sensor system in industrial applications.

  9. Laser Dyes

    Indian Academy of Sciences (India)

    amplification or generation of coherent light waves in the UV,. VIS, and near IR region. .... ciency in most flashlamp pumped dye lasers. It is used as reference dye .... have led to superior laser dyes with increased photostabilities. For instance ...

  10. Real-time near-IR imaging of laser-ablation crater evolution in dental enamel

    Science.gov (United States)

    Darling, Cynthia L.; Fried, Daniel

    2007-02-01

    We have shown that the enamel of the tooth is almost completely transparent near 1310-nm in the near-infrared and that near-IR (NIR) imaging has considerable potential for the optical discrimination of sound and demineralized tissue and for observing defects in the interior of the tooth. Lasers are now routinely used for many applications in dentistry including the ablation of dental caries. The objective of this study was to test the hypothesis that real-time NIR imaging can be used to monitor laser-ablation under varying conditions to assess peripheral thermal and transient-stress induced damage and to measure the rate and efficiency of ablation. Moreover, NIR imaging may have considerable potential for monitoring the removal of demineralized areas of the tooth during cavity preparations. Sound human tooth sections of approximately 3-mm thickness were irradiated by a CO II laser under varying conditions with and without a water spray. The incision area in the interior of each sample was imaged using a tungsten-halogen lamp with band-pass filter centered at 131--nm combined with an InGaAs focal plane array with a NIR zoom microscope in transillumination. Due to the high transparency of enamel at 1310-nm, laser-incisions were clearly visible to the dentin-enamel junction and crack formation, dehydration and irreversible thermal changes were observed during ablation. This study showed that there is great potential for near-IR imaging to monitor laser-ablation events in real-time to: assess safe laser operating parameters by imaging thermal and stress-induced damage, elaborate the mechanisms involved in ablation such as dehydration, and monitor the removal of demineralized enamel.

  11. Catastrophic optical bulk degradation in high-power single- and multi-mode InGaAs-AlGaAs strained QW lasers: part II

    Science.gov (United States)

    Sin, Yongkun; Ayvazian, Talin; Brodie, Miles; Lingley, Zachary

    2018-03-01

    High-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers are critical components for both terrestrial and space satellite communications systems. Since these lasers predominantly fail by catastrophic and sudden degradation due to catastrophic optical damage (COD), it is especially crucial for space satellite applications to investigate reliability, failure modes, precursor signatures of failure, and degradation mechanisms of these lasers. Our group reported a new failure mode in MM and SM InGaAs-AlGaAs strained QW lasers in 2009 and 2016, respectively. Our group also reported in 2017 that bulk failure due to catastrophic optical bulk damage (COBD) is the dominant failure mode of both SM and MM lasers that were subject to long-term life-tests. For the present study, we continued our physics of failure investigation by performing long-term life-tests followed by failure mode analysis (FMA) using nondestructive and destructive micro-analytical techniques. We performed long-term accelerated life-tests on state-of-the-art SM and MM InGaAs- AlGaAs strained QW lasers under ACC mode. Our life-tests have accumulated over 25,000 test hours for SM lasers and over 35,000 test hours for MM lasers. We first employed electron beam induced current (EBIC) technique to identify failure modes of degraded SM lasers by observing dark line defects. All the SM failures that we studied showed catastrophic and sudden degradation and all of these failures were bulk failures. Since degradation mechanisms responsible for COBD are still not well understood, we also employed other techniques including focused ion beam (FIB) and high-resolution TEM to further study dark line defects and dislocations in post-aged lasers. Keywor

  12. Laser spectroscopy

    CERN Document Server

    Demtröder, Wolfgang

    2008-01-01

    Keeping abreast of the latest techniques and applications, this new edition of the standard reference and graduate text on laser spectroscopy has been completely revised and expanded. While the general concept is unchanged, the new edition features a broad array of new material, e.g., frequency doubling in external cavities, reliable cw-parametric oscillators, tunable narrow-band UV sources, more sensitive detection techniques, tunable femtosecond and sub-femtosecond lasers (X-ray region and the attosecond range), control of atomic and molecular excitations, frequency combs able to synchronize independent femtosecond lasers, coherent matter waves, and still more applications in chemical analysis, medical diagnostics, and engineering.

  13. Laser spectroscopy

    CERN Document Server

    Demtröder, Wolfgang

    Keeping abreast of the latest techniques and applications, this new edition of the standard reference and graduate text on laser spectroscopy has been completely revised and expanded. While the general concept is unchanged, the new edition features a broad array of new material, e.g., ultrafast lasers (atto- and femto-second lasers) and parametric oscillators, coherent matter waves, Doppler-free Fourier spectroscopy with optical frequency combs, interference spectroscopy, quantum optics, the interferometric detection of gravitational waves and still more applications in chemical analysis, medical diagnostics, and engineering.

  14. Il laser

    CERN Document Server

    Smith, William V

    1974-01-01

    Verso il 1960, il laser era ancora "una soluzione alla ricerca di un problema", ma fin dagli anni immediatamente successivi si è rivelato uno strumento insostituibile per le applicazioni più svariate.

  15. Laser Refractography

    CERN Document Server

    Rinkevichyus, B.S; Raskovskaya, I.L

    2010-01-01

    This book describes the basic principles of laser refractography, a flexible new diagnostic tool for measuring optically inhomogeneous media and flows. Laser refractography is based on digital imaging and computer processing of structured laser beam refraction (SLR) in inhomogeneous transparent media. Laser refractograms provide both qualitative and quantitative measurements and can be used for the study of fast and transient processes. In this book, the theoretical basis of refractography is explored in some detail, and experimental setups are described for measurement of transparent media using either 2D (passed radiation) or 3D (scattered radiation) refractograms. Specific examples and applications are discussed, including visualization of the boundary layer near a hot or cold metallic ball in water, and observation of edge effects and microlayers in liquids and gases. As the first book to describe this new and exciting technique, this monograph has broad cross-disciplinary appeal and will be of interest t...

  16. Laser fusion

    International Nuclear Information System (INIS)

    Ashby, D.E.T.F.

    1976-01-01

    A short survey is given on laser fusion its basic concepts and problems and the present theoretical and experimental methods. The future research program of the USA in this field is outlined. (WBU) [de

  17. Laser spectroscopy

    International Nuclear Information System (INIS)

    Letokhov, V.S.

    1981-01-01

    This article describes recent progress in the application of laser atomic spectroscopy to study parameters of nuclei available in very small quantities; radioactive nuclei, rare isotopes, nuclear isomers, etc, for which study by conventional spectroscopic methods is difficult. (author)

  18. Laser fusion

    International Nuclear Information System (INIS)

    Key, M.H.; Oxford Univ.

    1990-04-01

    The use of lasers to drive implosions for the purpose of inertially confined fusion is an area of intense activity where progress compares favourably with that made in magnetic fusion and there are significant prospects for future development. In this brief review the basic concept is summarised and the current status is outlined both in the area of laser technology and in the most recent results from implosion experiments. Prospects for the future are also considered. (author)

  19. Laser Resurfacing

    OpenAIRE

    Janik, Joseph P.; Markus, Jodi L.; Al-Dujaili, Zeena; Markus, Ramsey F.

    2007-01-01

    In a society desiring images of beauty and youthfulness, the world of cutaneous surgery offers the gifts of facial rejuvenation for those determined to combat the signs of aging. With the development of novel laser and plasma technology, pigmentary changes, scarring, and wrinkles can be conquered providing smoother, healthier, younger-looking skin. This review highlights five of the most popular resurfacing technologies in practice today including the carbon dioxide (CO2) laser, the erbium:yt...

  20. Green lasers

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin

    2010-01-01

    Well over a dozen papers at this year's Photonics West meeting in San Francisco boasted improvements in harmonic generation to produce visible laser beams, most of them in the green spectral range......Well over a dozen papers at this year's Photonics West meeting in San Francisco boasted improvements in harmonic generation to produce visible laser beams, most of them in the green spectral range...

  1. Wavelength stabilized high pulse power laser diodes for automotive LiDAR

    Science.gov (United States)

    Knigge, A.; Klehr, A.; Wenzel, H.; Zeghuzi, A.; Fricke, J.; Maaßdorf, A.; Liero, A.; Tränkle, G.

    2018-03-01

    Diode lasers generating optical pulses with high peak power and lengths in the nanosecond range are key components of systems for free-space communication, metrology, material processing, spectroscopy, and light detection and ranging (LiDAR) as needed for object detection and autonomous driving. Automotive LiDAR systems demand additionally a good beam quality and low wavelength shift with temperature due to the wide operating temperature span. We present here internally wavelength stabilized lasers emitting ns optical pulses from an emission aperture between 30 μm and 100 μm with peak powers of tens of Watts at wavelengths around 905 nm. The vertical structure based on AlGaAs (confinement and cladding layers) and InGaAs (active quantum well) is especially optimized for pulsed operation with respect to the implementation of a surface Bragg grating with a high reflectivity. The fabricated 6 mm long distributed Bragg reflector (DBR) broad area (BA) lasers are electrically driven by an in-house developed high-speed unit generating 3 to 10 ns long nearly rectangular shaped current pulses with amplitudes of up to 250 A. Such lasers emit optical pulses with a peak power of more than 30 W at 95 A pulse current up to a temperature of 85°C with a wavelength shift as low as 65 pm/K and a lateral beam propagation factor less than 10. The influence of the lateral aperture width and the pulse length on the beam quality will be shown. A monolithic integration of 3 DBR BA lasers on a single chip whose emission can be combined into a single beam raises the output power to more than 100 W.

  2. Laser material processing

    CERN Document Server

    Steen, William

    2010-01-01

    This text moves from the basics of laser physics to detailed treatments of all major materials processing techniques for which lasers are now essential. New chapters cover laser physics, drilling, micro- and nanomanufacturing and biomedical laser processing.

  3. Laser therapy for cancer

    Science.gov (United States)

    ... this page: //medlineplus.gov/ency/patientinstructions/000905.htm Laser therapy for cancer To use the sharing features ... Lasers are also used on the skin. How Laser Therapy is Used Laser therapy can be used ...

  4. Lasers in Cancer Treatment

    Science.gov (United States)

    ... the advantages of laser therapy? What are the disadvantages of laser therapy? What does the future hold ... therapy is appropriate for them. What are the disadvantages of laser therapy? Laser therapy also has several ...

  5. Practical laser safety

    International Nuclear Information System (INIS)

    Winburn, D.C.

    1985-01-01

    This book includes discussions of the following topics: characteristics of lasers; eye components; skin damage thresholds; classification of lasers by ANSI Z136.1; selecting laser-protective eyewear; hazards associated with lasers; and, an index

  6. High speed gain coupled DFB laser diode integrated with MQW electroabsorption modulator

    International Nuclear Information System (INIS)

    Kim, Myung Gyoo; Lee, Seung Won; Park, Seong Su; Oh, Dae Kon; Lee, Hee Tae; Kim, Hong man; Pyun, Kwang Eui

    1998-01-01

    We have demonstrated stable modulation characteristics of the gain coupled distributed feedback(GC-DFB) laser diode integrated with butt-coupled InGaAsP/InGaAsP strain compensated MQW(multiple-Quantum-well) modulator for high speed optical transmission. For this purpose, we have adopted the InGaAsP/InGaAsP strain compensated MQW structure for the EA modulator and n-doped InGaAs absorptive grating for DFB laser. The typical threshold current and slope efficiency were about 15 mA and 0.1 mW/mA, respectively. The extinction ratio of fabricated integrated device was about 15 dB at -2 V, and the small signal bandwidth was shown to be around 17GHz. We also found that the α parameter becomes negative at below a -0.6 V bias voltage. We transmitted 10 Gbps NRZ electrical signal over 90 km of standard single mode optical fiber (SMF). A clearly opened eye diagram was observed in the modulated output

  7. High speed gain coupled DFB laser diode integrated with MQW electroabsorption modulator

    CERN Document Server

    Kim, M G; Park, S S; Oh, D K; Lee, H T; Kim, H M; Pyun, K E

    1998-01-01

    We have demonstrated stable modulation characteristics of the gain coupled distributed feedback(GC-DFB) laser diode integrated with butt-coupled InGaAsP/InGaAsP strain compensated MQW(multiple-Quantum-well) modulator for high speed optical transmission. For this purpose, we have adopted the InGaAsP/InGaAsP strain compensated MQW structure for the EA modulator and n-doped InGaAs absorptive grating for DFB laser. The typical threshold current and slope efficiency were about 15 mA and 0.1 mW/mA, respectively. The extinction ratio of fabricated integrated device was about 15 dB at -2 V, and the small signal bandwidth was shown to be around 17GHz. We also found that the alpha parameter becomes negative at below a -0.6 V bias voltage. We transmitted 10 Gbps NRZ electrical signal over 90 km of standard single mode optical fiber (SMF). A clearly opened eye diagram was observed in the modulated output.

  8. Power scaling and experimentally fitted model for broad area quantum cascade lasers in continuous wave operation

    Science.gov (United States)

    Suttinger, Matthew; Go, Rowel; Figueiredo, Pedro; Todi, Ankesh; Shu, Hong; Leshin, Jason; Lyakh, Arkadiy

    2018-01-01

    Experimental and model results for 15-stage broad area quantum cascade lasers (QCLs) are presented. Continuous wave (CW) power scaling from 1.62 to 2.34 W has been experimentally demonstrated for 3.15-mm long, high reflection-coated QCLs for an active region width increased from 10 to 20 μm. A semiempirical model for broad area devices operating in CW mode is presented. The model uses measured pulsed transparency current, injection efficiency, waveguide losses, and differential gain as input parameters. It also takes into account active region self-heating and sublinearity of pulsed power versus current laser characteristic. The model predicts that an 11% improvement in maximum CW power and increased wall-plug efficiency can be achieved from 3.15 mm×25 μm devices with 21 stages of the same design, but half doping in the active region. For a 16-stage design with a reduced stage thickness of 300 Å, pulsed rollover current density of 6 kA/cm2, and InGaAs waveguide layers, an optical power increase of 41% is projected. Finally, the model projects that power level can be increased to ˜4.5 W from 3.15 mm×31 μm devices with the baseline configuration with T0 increased from 140 K for the present design to 250 K.

  9. Laser acceleration

    Science.gov (United States)

    Tajima, T.; Nakajima, K.; Mourou, G.

    2017-02-01

    The fundamental idea of Laser Wakefield Acceleration (LWFA) is reviewed. An ultrafast intense laser pulse drives coherent wakefield with a relativistic amplitude robustly supported by the plasma. While the large amplitude of wakefields involves collective resonant oscillations of the eigenmode of the entire plasma electrons, the wake phase velocity ˜ c and ultrafastness of the laser pulse introduce the wake stability and rigidity. A large number of worldwide experiments show a rapid progress of this concept realization toward both the high-energy accelerator prospect and broad applications. The strong interest in this has been spurring and stimulating novel laser technologies, including the Chirped Pulse Amplification, the Thin Film Compression, the Coherent Amplification Network, and the Relativistic Mirror Compression. These in turn have created a conglomerate of novel science and technology with LWFA to form a new genre of high field science with many parameters of merit in this field increasing exponentially lately. This science has triggered a number of worldwide research centers and initiatives. Associated physics of ion acceleration, X-ray generation, and astrophysical processes of ultrahigh energy cosmic rays are reviewed. Applications such as X-ray free electron laser, cancer therapy, and radioisotope production etc. are considered. A new avenue of LWFA using nanomaterials is also emerging.

  10. Laser acceleration

    International Nuclear Information System (INIS)

    Tajima, T.; Nakajima, K.; Mourou, G.

    2017-01-01

    The fundamental idea of LaserWakefield Acceleration (LWFA) is reviewed. An ultrafast intense laser pulse drives coherent wakefield with a relativistic amplitude robustly supported by the plasma. While the large amplitude of wake fields involves collective resonant oscillations of the eigenmode of the entire plasma electrons, the wake phase velocity ∼ c and ultra fastness of the laser pulse introduce the wake stability and rigidity. A large number of worldwide experiments show a rapid progress of this concept realization toward both the high-energy accelerator prospect and broad applications. The strong interest in this has been spurring and stimulating novel laser technologies, including the Chirped Pulse Amplification, the Thin Film Compression, the Coherent Amplification Network, and the Relativistic Mirror Compression. These in turn have created a conglomerate of novel science and technology with LWFA to form a new genre of high field science with many parameters of merit in this field increasing exponentially lately. This science has triggered a number of worldwide research centers and initiatives. Associated physics of ion acceleration, X-ray generation, and astrophysical processes of ultrahigh energy cosmic rays are reviewed. Applications such as X-ray free electron laser, cancer therapy, and radioisotope production etc. are considered. A new avenue of LWFA using nano materials is also emerging.

  11. Characteristic of doping and diffusion of heavily doped n and p type InP and InGaAs epitaxial layers grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Pinzone, C.J.; Dupuis, R.D.; Ha, N.T.; Luftman, H.S.; Gerrard, N.D.

    1990-01-01

    Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material. In this study, N-type doping above 10 19 cm -3 has been achieved in InP and InGaAs using Sn as a dopant. P-type Zn doping at these levels has also been achieved in these materials but p type activation above ∼3 x 10 18 cm -3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples

  12. Effects of a finite melt on the thickness and composition of liquid phase epitaxial InGaAsP and InGaAs layers grown by the diffusion-limited step-cooling technique

    International Nuclear Information System (INIS)

    Cook, L.W.; Tashima, M.M.; Stillman, G.E.

    1980-01-01

    The thickness of InGaAsP (lambda/sub g/=1.15 μm) and InGaAs (lambda/sub g/=1.68 μm) liquid phase epitaxial layers grown on (100) InP substrates by the step-cooling technique has been measured as a function of growth time. (lambda/sub g/ is defined as the wavelength corresponding to the energy gap of the epitaxial layer.) For growth times much less than the shortest diffusion time tau/sub i/=l 2 /D/sub i/ of the melt constituents, where l is the melt height and D/sub i/ is the diffusivity of each component in the melt, the thickness is consistent with diffusion-limited theory, and the composition is constant. The time at which the growth rate deviates sharply from diffusion-limited theory and beyond which constant composition growth can no longer be maintained has been determined for the melt size used in our experiments and can be estimated for any melt size

  13. Laser Heterodyning

    CERN Document Server

    Protopopov, Vladimir V

    2009-01-01

    Laser heterodyning is now a widespread optical technique, based on interference of two waves with slightly different frequencies within the sensitive area of a photo-detector. Its unique feature – preserving phase information about optical wave in the electrical signal of the photo-detector – finds numerous applications in various domains of applied optics and optoelectronics: in spectroscopy, polarimetry, radiometry, laser radars and Lidars, microscopy and other areas. The reader may be surprised by a variety of disciplines that this book covers and satisfied by detailed explanation of the phenomena. Very well illustrated, this book will be helpful for researches, postgraduates and students, working in applied optics.

  14. Laser polarimetry

    International Nuclear Information System (INIS)

    Goldstein, D.H.

    1989-01-01

    Polarimetry, or transmission ellipsometry, is an important experimental technique for the determination of polarization properties of bulk materials. In this technique, source radiation of known polarization is passed through bulk samples to determine, for example, natural or induced birefringence and dichroism. The laser is a particularly appropriate source for this technique because of its monochromaticity, collimation, and radiant intensity. Lasers of many different wavelengths in different spectral regions are now available. Laser polarimetry can be done in any of these wavelength regions where polarizing elements are available. In this paper, polarimetry is reviewed with respect to applications, sources used, and polarization state generator and analyzer configurations. Scattering ellipsometry is also discussed insofar as the forward scattering measurement is related to polarimetry. The authors then describe an infrared laser polarimeter which we have designed and constructed. This instrument can operate over large wavelength regions with only a change in source. Polarization elements of the polarimeter are in a dual rotating retarder configuration. Computer controlled rotary stages and computer monitored detectors automate the data collection. The Mueller formulation is used to process the polarization information. Issues and recent progress with this instrument are discussed

  15. excimer laser

    Indian Academy of Sciences (India)

    2014-01-07

    Jan 7, 2014 ... is necessary to deposit one order higher input electric power into gas medium than ... cross-sectional view of the laser system is shown in figure 2A. The system mainly consists ... Considering the simplicity and reliability of the.

  16. Laser device

    DEFF Research Database (Denmark)

    2013-01-01

    The present invention provides a light source for light circuits on a silicon platform. A vertical laser cavity is formed by a gain region arranged between a first mirror structure and a second mirror structure, both acting as mirrors, by forming a grating region including an active material...

  17. Correlation effects of excited charge carriers in semiconductor nanostructures on the example of InGaAs quantum dots and atomic MoS{sub 2} monolayers; Korrelationseffekte angeregter Ladungstraeger in Halbleiter-Nanostrukturen am Beispiel von InGaAs-Quantenpunkten und atomaren MoS{sub 2}-Monolagen

    Energy Technology Data Exchange (ETDEWEB)

    Steinhoff, Alexander

    2014-11-10

    Semiconductor nanostructures are applied in various electronic and optoelectronic devices. As miniaturization of these devices progresses, a microscopic treatment of correlations between excited carriers is essential for understanding and describing the governing physics. We investigate two different types of semiconductor nanostructures, which have each received considerable attention over the last years. These are self-assembled InGaAs quantum dots (QDs) on the one hand and atomic monolayers of MoS{sub 2} on the other hand. Self-assembled semiconductor QDs are used as active material in conventional lasers and as efficient non-classical light sources with applications in quantum information. As they can confine a small number of carriers in localized stats with discrete energies, it is questionable to neglect correlations between the carriers when describing their dynamics. We analyze the influence of carrier correlations in a single QD on Coulomb scattering processes, which are due to the contact with a quasi-continuum of wetting-layer (WL) states. Results obtained from a Boltzmann equation are compared with the fully correlated dynamics governed by a von-Neumann-Lindblad equation. In a first step, we take into account correlations generated by the exact treatment of Pauli blocking due to the contributing QD carrier configurations. Subsequently, we include correlations generated by energy renormalizations due to Coulomb interaction between the QD carriers. It is shown that at low WL carrier densities, neither Pauli correlations nor Coulomb correlations can be safely neglected, if the dynamics of single-particle states in the QD are to be predicted qualitatively and quantitatively. In the high-density regime, both types of correlations play a lesser role and thus a description of carrier dynamics by a Boltzmann equation becomes reliable. Furthermore, the efficiency of WL-assisted scattering processes as well as scattering-induced dephasing rates depending on the

  18. Nanowire Lasers

    Directory of Open Access Journals (Sweden)

    Couteau C.

    2015-05-01

    Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

  19. Excimer Laser Technology

    CERN Document Server

    Basting, Dirk

    2005-01-01

    This comprehensive survey on Excimer Lasers investigates the current range of the technology, applications and devices of this commonly used laser source, as well as the future of new technologies, such as F2 laser technology. Additional chapters on optics, devices and laser systems complete this compact handbook. A must read for laser technology students, process application researchers, engineers or anyone interested in excimer laser technology. An effective and understandable introduction to the current and future status of excimer laser technology.

  20. Laser ion sources

    Energy Technology Data Exchange (ETDEWEB)

    Bykovskij, Yu

    1979-02-01

    The characteristics a laser source of multiply-ionized ions are described with regard to the interaction of laser radiation and matter, ion energy spectrum, angular ion distribution. The amount of multiple-ionization ions is evaluated. Out of laser source applications a laser injector of multiple-ionization ions and nuclei, laser mass spectrometry, laser X-ray microradiography, and a laser neutron generators are described.

  1. Dermatological laser treatment

    International Nuclear Information System (INIS)

    Moerk, N.J.; Austad, J.; Helland, S.; Thune, P.; Volden, G.; Falk, E.

    1991-01-01

    The article reviews the different lasers used in dermatology. Special emphasis is placed on the treatment of naevus flammeus (''portwine stain'') where lasers are the treatment of choice. Argon laser and pulsed dye laser are the main lasers used in vascular skin diseases, and the article focuses on these two types. Copper-vapour laser, neodymium-YAG laser and CO 2 laser are also presented. Information is provided about the availability of laser technology in the different health regions in Norway. 5 refs., 2 figs

  2. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B., E-mail: galiev-galib@mail.ru [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Grekhov, M. M. [National Research Nuclear University “MEPhI” (Russian Federation); Kitaeva, G. Kh. [Moscow State University, Faculty of Physics (Russian Federation); Klimov, E. A.; Klochkov, A. N. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Kolentsova, O. S. [National Research Nuclear University “MEPhI” (Russian Federation); Kornienko, V. V.; Kuznetsov, K. A. [Moscow State University, Faculty of Physics (Russian Federation); Maltsev, P. P.; Pushkarev, S. S. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)

    2017-03-15

    The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

  3. CO2-laser fusion

    International Nuclear Information System (INIS)

    Stark, E.E. Jr.

    1978-01-01

    The basic concept of laser fusion is described, with a set of requirements on the laser system. Systems and applications concepts are presented and discussed. The CO 2 laser's characteristics and advantages for laser fusion are described. Finally, technological issues in the development of CO 2 laser systems for fusion applications are discussed

  4. Project LASER

    Science.gov (United States)

    1990-01-01

    NASA formally launched Project LASER (Learning About Science, Engineering and Research) in March 1990, a program designed to help teachers improve science and mathematics education and to provide 'hands on' experiences. It featured the first LASER Mobile Teacher Resource Center (MTRC), is designed to reach educators all over the nation. NASA hopes to operate several MTRCs with funds provided by private industry. The mobile unit is a 22-ton tractor-trailer stocked with NASA educational publications and outfitted with six work stations. Each work station, which can accommodate two teachers at a time, has a computer providing access to NASA Spacelink. Each also has video recorders and photocopy/photographic equipment for the teacher's use. MTRC is only one of the five major elements within LASER. The others are: a Space Technology Course, to promote integration of space science studies with traditional courses; the Volunteer Databank, in which NASA employees are encouraged to volunteer as tutors, instructors, etc; Mobile Discovery Laboratories that will carry simple laboratory equipment and computers to provide hands-on activities for students and demonstrations of classroom activities for teachers; and the Public Library Science Program which will present library based science and math programs.

  5. Growth of strained, ferroelectric NaNbO{sub 3} thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sellmann, Jan; Schwarzkopf, Jutta; Duk, Andreas; Kwasniewski, Albert; Schmidbauer, Martin; Fornari, Roberto [IKZ, Berlin (Germany)

    2012-07-01

    Due to its promising ferro-/piezoelectric properties and high Curie temperature NaNbO{sub 3} has attracted much attention. In contrast to bulk crystals, thin epitaxial films may incorporate and maintain a certain compressive or tensile lattice strain, depending on the used substrate/film combination. This deformation of the crystal lattice is known to strongly influence the ferroelectric properties of perovskites. In the case of NaNbO{sub 3} compressive strain is achieved in films deposited on NdGaO{sub 3} and SrTiO{sub 3} substrates while deposition on DyScO{sub 3} and TbScO{sub 3} leads to tensile in-plane strain. In order to characterize and practically apply the ferroelectric films, it is necessary to embed them in a capacitor structure for which we use pseudomorphically grown SrRuO{sub 3} as bottom electrodes. We report on the deposition of SrRuO{sub 3} and NaNbO{sub 3} single layers on SrTiO{sub 3}, DyScO{sub 3}, TbScO{sub 3} and NbGaO{sub 3} substrates by means of pulsed laser deposition. By adjusting the substrate temperature, the oxygen partial pressure and the laser frequency we have successfully deposited smooth, strained, single phase NaNbO{sub 3} thin films. Investigations of the films by atomic force microscopy and high resolution X-ray diffraction reveal the dependence of the surface morphology and the incorporated lattice strain on the deposition parameters and the lattice mismatch, respectively. All films exhibit piezoelectric properties, as proven by piezoresponse force microscopy.

  6. Laser Research Lab

    Data.gov (United States)

    Federal Laboratory Consortium — The Laser Research lab is thecenter for the development of new laser sources, nonlinear optical materials, frequency conversion processes and laser-based sensors for...

  7. Laser therapy (image)

    Science.gov (United States)

    A laser is used for many medical purposes. Because the laser beam is so small and precise, it enables ... without injuring surrounding tissue. Some uses of the laser are retinal surgery, excision of lesions, and cauterization ...

  8. Laser fusion: an overview

    International Nuclear Information System (INIS)

    Boyer, K.

    1975-01-01

    The laser fusion concept is described along with developments in neodymium and carbon dioxide lasers. Fuel design and fabrication are reviewed. Some spin-offs of the laser fusion program are discussed. (U.S.)

  9. Laser power supply

    International Nuclear Information System (INIS)

    Bernstein, D.

    1975-01-01

    The laser power supply includes a regulator which has a high voltage control loop based on a linear approximation of a laser tube negative resistance characteristic. The regulator has independent control loops for laser current and power supply high voltage

  10. Bleaching Dengan Teknologi Laser

    OpenAIRE

    Eliwaty

    2008-01-01

    Penulisan tentang bleaching dengan laser dimaksudkan untuk menambah wawasan serta pengetahuan dari pembaca di bidang kedokteran gigi. Macam-macam laser yang dipergunakan dalam bleaching yaitu argon, CO2 serta dioda laser. Contoh merek produk laser yaitu Blulaze, Dentcure untuk argonlaser, Novapulse untuk C02 serta Opus 5 untuk dioda laser. Laser bleaching hasilnya dapat dicapai dalam satu kunjungan saja, cepat, efisien namun biayanya relatif mahal, dapat menimbulkan burn, sensitivitas se...

  11. Generation of high-field terahertz pulses in an HMQ-TMS organic crystal pumped by an ytterbium laser at 1030 nm.

    Science.gov (United States)

    Rovere, Andrea; Jeong, Young-Gyun; Piccoli, Riccardo; Lee, Seung-Heon; Lee, Seung-Chul; Kwon, O-Pil; Jazbinsek, Mojca; Morandotti, Roberto; Razzari, Luca

    2018-02-05

    We present the generation of high-peak-electric-field terahertz pulses via collinear optical rectification in a 2-(4-hydroxy-3-methoxystyryl)-1-methilquinolinium-2,4,6-trimethylbenzenesulfonate (HMQ-TMS) organic crystal. The crystal is pumped by an amplified ytterbium laser system, emitting 170-fs-long pulses centered at 1030 nm. A terahertz peak electric field greater than 200 kV/cm is obtained for 420 µJ of optical pump energy, with an energy conversion efficiency of 0.26% - about two orders of magnitude higher than in common inorganic crystals collinearly pumped by amplified femtosecond lasers. An open-aperture Z-scan measurement performed on an n-doped InGaAs thin film using such terahertz source shows a nonlinear increase in the terahertz transmission of about 2.2 times. Our findings demonstrate the potential of this terahertz generation scheme, based on ytterbium laser technology, as a simple and efficient alternative to the existing intense table-top terahertz sources. In particular, we show that it can be readily used to explore nonlinear effects at terahertz frequencies.

  12. Laser safety at high profile laser facilities

    International Nuclear Information System (INIS)

    Barat, K.

    2010-01-01

    Complete text of publication follows. Laser safety has been an active concern of laser users since the invention of the laser. Formal standards were developed in the early 1970's and still continue to be developed and refined. The goal of these standards is to give users guidance on the use of laser and consistent safety guidance and requirements for laser manufacturers. Laser safety in the typical research setting (government laboratory or university) is the greatest challenge to the laser user and laser safety officer. This is due to two factors. First, the very nature of research can put the user at risk; consider active manipulation of laser optics and beam paths, and user work with energized systems. Second, a laser safety culture that seems to accept laser injuries as part of the graduate student educational process. The fact is, laser safety at research settings, laboratories and universities still has long way to go. Major laser facilities have taken a more rigid and serious view of laser safety, its controls and procedures. Part of the rationale for this is that these facilities draw users from all around the world presenting the facility with a work force of users coming from a wide mix of laser safety cultures. Another factor is funding sources do not like bad publicity which can come from laser accidents and a poor safety record. The fact is that injuries, equipment damage and lost staff time slow down progress. Hence high profile/large laser projects need to adapt a higher safety regimen both from an engineering and administrative point of view. This presentation will discuss all these points and present examples. Acknowledgement. This work has been supported by the University of California, Director, Office of Science.

  13. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, N. S., E-mail: nsokolov@fl.ioffe.ru; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Maksimova, K. Yu.; Grunin, A. I. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Tabuchi, M. [Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603 (Japan)

    2016-01-14

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  14. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    International Nuclear Information System (INIS)

    Sokolov, N. S.; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V.; Maksimova, K. Yu.; Grunin, A. I.; Tabuchi, M.

    2016-01-01

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y 3 Fe 5 O 12 (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films

  15. Wavelength Selection For Laser Raman Spectroscopy of Putative Martian Habitats and Biomolecules

    Science.gov (United States)

    Wynn-Williams, D. D.; Newton, E. M. G.; Edwards, H. G. M.

    Pigments are key potential biomarkers for any former life on Mars because of the selective pressure of solar radiation on any biological system that could have evolved at its surface. We have found that the near -Infrared laser Raman spectrometer available to use was eminently suitable for diagnostic analysis of pigments because of their minimal autofluorescence at its 1064 nm excitation wav elength. However, we have now evaluated a diverse range of excitation wavelengths to confirm this choice, to ensure that we have the best technique to seek for pigments and their derivatives from any former surface life on Mars. The Raman is weak relative to fluorescence, which results in elevated baseline and concurrent swamping of Raman bands. We confirm the molecular information available from near-IR FT Raman spectra for two highly pigmented UV-tolerant epilithic Antarctic lichens (Acarospora chlorop hana and Caloplaca saxicola) from Victoria Land, a whole endolithic microbial community and endolithic cyanobacterium Chroococcidiopsis from within translucent sandstone of the Trans -Antarctic Mountains, and the free- living cyanobacterium Nostoc commune from Alexander Island, Antarctic Peninsula region. We also show that much of the information we require on biomolecules is not evident from lasers of shorter wavelengths. A miniature 1064 nm Raman spectrometer with an In-Ga-As detector sensitive to IR is being developed by Montana State University (now existing as a prototype) as the prime instrument for a proposed UK-led Mars rover mission (Vanguard). Preliminary spectra from this system confirm the suitability of the near-IR laser.

  16. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  17. Laser Protection TIL

    Data.gov (United States)

    Federal Laboratory Consortium — The Laser Protection TIL conducts research and analysis of laser protection materials along with integration schemes. The lab's objectives are to limit energy coming...

  18. Laser Photochemistry.

    Science.gov (United States)

    1981-07-01

    inverted by the first, i.e., at the moment of time t = T, such that i = (2n+)lT, where 0 is the Rabi frequency (Oraevski et al., 1976). . classical... anisotropic molecule present. CW HeNe, Ar+ and Kr+ lasers are used, and the filter method is necessary because of time-scales lo8 - 10ll Hz. Some general...e.g., truncated harmonic oscillator, square well, spherically symmetric Morse or Lennard-Jones, anisotropic (angle-dependent) Morse or Lennard-Jones

  19. Laser illumination and EO systems for covert surveillance from NIR to SWIR and beyond

    Science.gov (United States)

    Dvinelis, Edgaras; Žukauskas, Tomas; Kaušylas, Mindaugas; Vizbaras, Augustinas; Vizbaras, Kristijonas; Vizbaras, Dominykas

    2016-10-01

    One of the most important factor of success in battlefield is the ability to remain undetected by the opposing forces while also having an ability to detect all possible threats. Illumination and pointing systems working in NIR and SWIR bands are presented. Wavelengths up to 1100 nm can be registered by newest generation image intensifier tubes, CCD and EMCCD sensors. Image intensifier tubes of generation III or older are only limited up to wavelength of 900 nm [1]. Longer wavelengths of 1550 nm and 1625 nm are designed to be used with SWIR electro-optical systems and they cannot be detected by any standard night vision system. Long range SWIR illuminators and pointers have beam divergences down to 1 mrad and optical powers up to 1.5 W. Due to lower atmospheric scattering SWIR illuminators and pointers can be used at extremely long distances up to 10s of km and even further during heavy weather conditions. Longer wavelengths of 2100 nm and 2450 nm are also presented, this spectrum band is of great interest for direct infrared countermeasure (DIRCM) applications. State-of-the-art SWIR and LWIR electro-optical systems are presented. Sensitive InGaAs sensors coupled with "fast" (low F/#) optical lenses can provide complete night vision, detection of all NIR and SWIR laser lines, penetration through smoke, dust and fog. Finally beyond-state-of-the-art uncooled micro-bolometer LWIR systems are presented featuring ultra-high sensor sensitivities of 20 mK.

  20. Diode-pumped Yb:Sr5(PO4)3F laser performance

    International Nuclear Information System (INIS)

    Marshall, C.D.; Payne, S.A.; Smith, L.K.

    1995-01-01

    The performance of the first diode-pumped Yb 3+ -doped Sr 5 (PO 4 ) 3 F (Yb:S-FAP) laser is discussed. We found the pumping dynamics and extraction cross-sections of Yb:S-FAP crystals to be similar to those previously inferred by purely spectroscopic techniques. The saturation fluence for pumping was measured to be 2.2 J/cm 2 using three different methods based on either the spatial, temporal, or energy transmission properties of a Yb:S-FAP rod. The small signal gain implies an emission cross section of 6.0 x 10 -20 cm 2 that falls within error bars of the previously reported value of 7.3 x 10 -20 cm 2 , obtained from spectroscopic techniques. Up to 1.7 J/cm 3 of stored energy density was achieved in a 6 x 6 x 44 mm Yb:S-FAP amplifier rod. An InGaAs diode array has been fabricated that has suitable specifications for pumping a 3 x 3 x 30 mm Yb:S-FAP rod. In a free running configuration diode-pumped slope efficiencies up to 43% were observed with output energies up to ∼0.5 J per 1 ms pulse. When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz and 500 μs pulses

  1. Laser Propulsion - Quo Vadis

    International Nuclear Information System (INIS)

    Bohn, Willy L.

    2008-01-01

    First, an introductory overview of the different types of laser propulsion techniques will be given and illustrated by some historical examples. Second, laser devices available for basic experiments will be reviewed ranging from low power lasers sources to inertial confinement laser facilities. Subsequently, a status of work will show the impasse in which the laser propulsion community is currently engaged. Revisiting the basic relations leads to new avenues in ablative and direct laser propulsion for ground based and space based applications. Hereby, special attention will be devoted to the impact of emerging ultra-short pulse lasers on the coupling coefficient and specific impulse. In particular, laser sources and laser propulsion techniques will be tested in microgravity environment. A novel approach to debris removal will be discussed with respect to the Satellite Laser Ranging (SRL) facilities. Finally, some non technical issues will be raised aimed at the future prospects of laser propulsion in the international community

  2. Ultra-Low Noise Quad Photoreceiver for Space Based Laser Interferometric Gravity Wave Detection, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to design and develop 2x2 quad p-i-n InGaAs Photoreceivers having the following characteristics: (a) Active area diameter 0.75 mm; (b) Wavelength coverage...

  3. Laser safety and practice

    International Nuclear Information System (INIS)

    Low, K.S.

    1995-01-01

    Lasers are finding increasing routine applications in many areas of science, medicine and industry. Though laser radiation is non-ionizing in nature, the usage of high power lasers requires specific safety procedures. This paper briefly outlines the properties of laser beams and various safety procedures necessary in their handling and usage. (author)

  4. Diode lasers and arrays

    International Nuclear Information System (INIS)

    Streifer, W.

    1988-01-01

    This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

  5. Laser cladding with powder

    NARCIS (Netherlands)

    Schneider, M.F.; Schneider, Marcel Fredrik

    1998-01-01

    This thesis is directed to laser cladding with powder and a CO2 laser as heat source. The laser beam intensity profile turned out to be an important pa6 Summary rameter in laser cladding. A numerical model was developed that allows the prediction of the surface temperature distribution that is

  6. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  7. Visible Solid State Lasers

    NARCIS (Netherlands)

    Hikmet, R.A.M.

    2007-01-01

    Diode lasers can be found in various applications most notably in optical communication and optical storage. Visible lasers were until recently were all based on IR diode lasers. Using GaN, directly blue and violet emitting lasers have also been introduced to the market mainly in the area of optical

  8. Laser Microdissection.

    Science.gov (United States)

    Frost, Andra R; Eltoum, Isam-Eldin; Siegal, Gene P; Emmert-Buck, Michael R; Tangrea, Michael A

    2015-10-01

    Laser microdissection (LM) offers a relatively rapid and precise method of isolating and removing specified cells from complex tissues for subsequent analysis of their RNA, DNA, protein or metabolite content, thereby allowing assessment of the role of different cell types in the normal physiological or disease processes being studied. In this unit, protocols for the preparation of mammalian frozen tissues, fixed tissues, and cytologic specimens for LM, including tissue freezing, tissue processing and paraffin embedding, histologic sectioning, cell processing, hematoxylin and eosin staining, immunohistochemistry, and image-guided cell targeting are presented. Also provided are recipes for generating lysis buffers for the recovery of nucleic acids and proteins. The Commentary section addresses the types of specimens that can be utilized for LM and approaches to staining of specimens for cell visualization. Emphasis is placed on the preparation of tissue or cytologic specimens as this is critical to effective LM. Copyright © 2015 John Wiley & Sons, Inc.

  9. Laser EXAFS

    International Nuclear Information System (INIS)

    Mallozzi, P.J.; Epstein, H.M.; Schwenzel, R.E.; Campbell, B.E.

    1983-01-01

    Apparatus for obtaining EXAFS data of a material, comprising means for directing radiant energy from a laser onto a target in such manner as to produce X-rays at the target of a selected spectrum and intensity, suitable for obtaining the EXAFS spectrum of the material, means for directing X-rays from the target onto spectral dispersive means so located as to direct the spectrally resolved X-rays therefrom onto recording means, and means for positioning a sample of material in the optical path of the X-rays, the recording means providing a reference spectrum of X-rays not affected by the sample and absorption spectrum of X-rays modified by transmission through the sample

  10. Multibeam Fibre Laser Cutting

    DEFF Research Database (Denmark)

    Olsen, Flemming Ove

    The appearance of the high power high brilliance fibre laser has opened for new possibilities in laser materials processing. In laser cutting this laser has demonstrated high cutting performance compared to the dominating cutting laser, the CO2-laser. However, quality problems in fibre......-laser cutting have until now limited its application in metal cutting. In this paper the first results of proof-of-principle studies applying a new approach (patent pending) for laser cutting with high brightness short wavelength lasers will be presented. In the approach, multi beam patterns are applied...... to control the melt flow out of the cut kerf resulting in improved cut quality in metal cutting. The beam patterns in this study are created by splitting up beams from 2 single mode fibre lasers and combining these beams into a pattern in the cut kerf. The results are obtained with a total of 550 W of single...

  11. Multibeam fiber laser cutting

    DEFF Research Database (Denmark)

    Olsen, Flemming Ove; Hansen, Klaus Schütt; Nielsen, Jakob Skov

    2009-01-01

    The appearance of the high power high brilliance fiber laser has opened for new possibilities in laser materials processing. In laser cutting this laser has demonstrated high cutting performance compared to the dominating Cutting laser, the CO2 laser. However, quality problems in fiber......-laser cutting have until now limited its application to metal cutting. In this paper the first results of proof-of-principle Studies applying a new approach (patent pending) for laser cutting with high brightness and short wavelength lasers will be presented. In the approach, multibeam patterns are applied...... to control the melt flow out of the cut kerf resulting in improved cut quality in metal cutting. The beam patterns in this study are created by splitting up beams from two single mode fiber lasers and combining these beams into a pattern in the cut kerf. The results are obtained with a total of 550 W...

  12. History and principle of lasers

    International Nuclear Information System (INIS)

    Townes, Ch.H.; Schwob, C.; Julien, J.; Forget, S.; Robert-Philip, I.; Balcou, Ph.

    2010-01-01

    In the first article C.H. Townes, the inventor of the maser, describes the work and ideas that led to the invention of the laser. The second article explains how a laser operate and the third article reviews the main different types of laser: solid lasers, gas lasers, diode lasers and dye lasers

  13. Technological laser application

    International Nuclear Information System (INIS)

    Shia, D.O.; Kollen, R.; Rods, U.

    1980-01-01

    Problems of the technological applications of lasers are stated in the popular form. Main requirements to a technological laser as well as problems arising in designing any system using lasers have been considered. Areas of the laser applications are described generally: laser treatment of materials, thermal treatment, welding, broach and drilling of holes, scribing, microtreatment and adjustment of resistors, material cutting, investigations into controlled thermonuclear fussion

  14. Laser ablation principles and applications

    CERN Document Server

    1994-01-01

    Laser Ablation provides a broad picture of the current understanding of laser ablation and its many applications, from the views of key contributors to the field. Discussed are in detail the electronic processes in laser ablation of semiconductors and insulators, the post-ionization of laser-desorbed biomolecules, Fourier-transform mass spectroscopy, the interaction of laser radiation with organic polymers, laser ablation and optical surface damage, laser desorption/ablation with laser detection, and laser ablation of superconducting thin films.

  15. New power lasers

    International Nuclear Information System (INIS)

    Yamanaka, Masanobu; Daido, Hiroyuki; Imasaki, Kazuo.

    1989-01-01

    As the new power lasers which are expected to exert large extending effect to the fields of advanced science and technology including precision engineering as well as laser nuclear fusion, LD-excited solid laser, X-ray laser and free electron laser are taken up and outlined. Recently, the solid laser using high power output, high efficiency semiconductor laser as the exciting beam source has been developed. This is called laser diode (LD)-excited solid laser, and the heightening of power output and efficiency and the extension of life are planned. Its present status and application to medical use, laser machining, laser soldering and so on are described. In 1960, the laser in visible region appeared, however in 1985, the result of observing induced emission beam by electron collision exciting method was reported in USA. In the wavelength range of 200 A, holography and contact X-ray microscope applications were verified. The various types of soft X-ray laser and the perspective hereafter are shown. The principle of free electron laser is explained. In the free electron laser, wavelength can be changed by varying electron beam energy, the period of wiggler magnetic field and the intensity of magnetic field. Further, high efficiency and large power output are possible. Its present status, application and the perspective hereafter are reported. (K.I.)

  16. Laser applications in materials processing

    International Nuclear Information System (INIS)

    Ready, J.F.

    1980-01-01

    The seminar focused on laser annealing of semiconductors, laser processing of semiconductor devices and formation of coatings and powders, surface modification with lasers, and specialized laser processing methods. Papers were presented on the theoretical analysis of thermal and mass transport during laser annealing, applications of scanning continuous-wave and pulsed lasers in silicon technology, laser techniques in photovoltaic applications, and the synthesis of ceramic powders from laser-heated gas-phase reactants. Other papers included: reflectance changes of metals during laser irradiation, surface-alloying using high-power continuous lasers, laser growth of silicon ribbon, and commercial laser-shock processes

  17. Raman fiber lasers

    CERN Document Server

    2017-01-01

    This book serves as a comprehensive, up-to-date reference about this cutting-edge laser technology and its many new and interesting developments. Various aspects and trends of Raman fiber lasers are described in detail by experts in their fields. Raman fiber lasers have progressed quickly in the past decade, and have emerged as a versatile laser technology for generating high power light sources covering a spectral range from visible to mid-infrared. The technology is already being applied in the fields of telecommunication, astronomy, cold atom physics, laser spectroscopy, environmental sensing, and laser medicine. This book covers various topics relating to Raman fiber laser research, including power scaling, cladding and diode pumping, cascade Raman shifting, single frequency operation and power amplification, mid-infrared laser generation, specialty optical fibers, and random distributed feedback Raman fiber lasers. The book will appeal to scientists, students, and technicians seeking to understand the re...

  18. Ceramic Laser Materials

    Directory of Open Access Journals (Sweden)

    Guillermo Villalobos

    2012-02-01

    Full Text Available Ceramic laser materials have come a long way since the first demonstration of lasing in 1964. Improvements in powder synthesis and ceramic sintering as well as novel ideas have led to notable achievements. These include the first Nd:yttrium aluminum garnet (YAG ceramic laser in 1995, breaking the 1 KW mark in 2002 and then the remarkable demonstration of more than 100 KW output power from a YAG ceramic laser system in 2009. Additional developments have included highly doped microchip lasers, ultrashort pulse lasers, novel materials such as sesquioxides, fluoride ceramic lasers, selenide ceramic lasers in the 2 to 3 μm region, composite ceramic lasers for better thermal management, and single crystal lasers derived from polycrystalline ceramics. This paper highlights some of these notable achievements.

  19. Infrared laser system

    International Nuclear Information System (INIS)

    Cantrell, C.D.; Carbone, R.J.

    1977-01-01

    An infrared laser system and method for isotope separation may comprise a molecular gas laser oscillator to produce a laser beam at a first wavelength, Raman spin flip means for shifting the laser to a second wavelength, a molecular gas laser amplifier to amplify said second wavelength laser beam to high power, and optical means for directing the second wavelength, high power laser beam against a desired isotope for selective excitation thereof in a mixture with other isotopes. The optical means may include a medium which shifts the second wavelength high power laser beam to a third wavelength, high power laser beam at a wavelength coincidental with a corresponding vibrational state of said isotope and which is different from vibrational states of other isotopes in the gas mixture

  20. Ceramic Laser Materials

    Science.gov (United States)

    Sanghera, Jasbinder; Kim, Woohong; Villalobos, Guillermo; Shaw, Brandon; Baker, Colin; Frantz, Jesse; Sadowski, Bryan; Aggarwal, Ishwar

    2012-01-01

    Ceramic laser materials have come a long way since the first demonstration of lasing in 1964. Improvements in powder synthesis and ceramic sintering as well as novel ideas have led to notable achievements. These include the first Nd:yttrium aluminum garnet (YAG) ceramic laser in 1995, breaking the 1 KW mark in 2002 and then the remarkable demonstration of more than 100 KW output power from a YAG ceramic laser system in 2009. Additional developments have included highly doped microchip lasers, ultrashort pulse lasers, novel materials such as sesquioxides, fluoride ceramic lasers, selenide ceramic lasers in the 2 to 3 μm region, composite ceramic lasers for better thermal management, and single crystal lasers derived from polycrystalline ceramics. This paper highlights some of these notable achievements. PMID:28817044

  1. Spectroscopic and imaging diagnostics of pulsed laser deposition laser plasmas

    International Nuclear Information System (INIS)

    Thareja, Raj K.

    2002-01-01

    An overview of laser spectroscopic techniques used in the diagnostics of laser ablated plumes used for thin film deposition is given. An emerging laser spectroscopic imaging technique for the laser ablation material processing is discussed. (author)

  2. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiao-Hang; Detchprohm, Theeradetch; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Dupuis, Russell D., E-mail: dupuis@gatech.edu [Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250 (United States); Wang, Shuo; Wei, Yong O.; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Wernicke, Tim; Reich, Christoph; Martens, Martin; Kneissl, Michael [Technical University of Berlin, Institute for Solid State Physics, Berlin D-10623 (Germany)

    2014-10-06

    Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire substrates. Stimulated emission was observed at wavelengths of 256 nm and 249 nm with thresholds of 61 kW/cm{sup 2} and 95 kW/cm{sup 2} at room temperature, respectively. The thresholds are comparable to the reported state-of-the-art AlGaN-based MQW DUV lasers grown on bulk AlN substrates emitting at 266 nm. These low thresholds are attributed to the optimization of active region and waveguide layer as well as the use of high-quality AlN/sapphire templates. The stimulated emission above threshold was dominated by transverse-electric polarization. This work demonstrates the potential candidacy of sapphire substrates for DUV diode lasers.

  3. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

    International Nuclear Information System (INIS)

    Li, Xiao-Hang; Detchprohm, Theeradetch; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Dupuis, Russell D.; Wang, Shuo; Wei, Yong O.; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.; Wernicke, Tim; Reich, Christoph; Martens, Martin; Kneissl, Michael

    2014-01-01

    Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire substrates. Stimulated emission was observed at wavelengths of 256 nm and 249 nm with thresholds of 61 kW/cm 2 and 95 kW/cm 2 at room temperature, respectively. The thresholds are comparable to the reported state-of-the-art AlGaN-based MQW DUV lasers grown on bulk AlN substrates emitting at 266 nm. These low thresholds are attributed to the optimization of active region and waveguide layer as well as the use of high-quality AlN/sapphire templates. The stimulated emission above threshold was dominated by transverse-electric polarization. This work demonstrates the potential candidacy of sapphire substrates for DUV diode lasers.

  4. Lasers in periodontics.

    Science.gov (United States)

    Elavarasu, Sugumari; Naveen, Devisree; Thangavelu, Arthiie

    2012-08-01

    Laser is one of the most captivating technologies in dental practice since Theodore Maiman in 1960 invented the ruby laser. Lasers in dentistry have revolutionized several areas of treatment in the last three and a half decades of the 20(th) century. Introduced as an alternative to mechanical cutting device, laser has now become an instrument of choice in many dental applications. Evidence suggests its use in initial periodontal therapy, surgery, and more recently, its utility in salvaging implant opens up a wide range of applications. More research with better designs are a necessity before lasers can become a part of dental armamentarium. This paper gives an insight to laser in periodontics.

  5. Excimer laser applications

    International Nuclear Information System (INIS)

    Fantoni, R.

    1988-01-01

    This lecture deals with laser induced material photoprocessing, especially concerning those processes which are initiated by u.v. lasers (mostly excimer laser). Advantages of using the u.v. radiation emitted by excimer lasers, both in photophysical and photochemical processes of different materials, are discussed in detail. Applications concerning microelectronics are stressed with respect to other applications in different fields (organic chemistry, medicine). As further applications of excimer lasers, main spectroscopic techniques for ''on line'' diagnostics which employ excimer pumped dye lasers, emitting tunable radiation in the visible and near u.v. are reviewed

  6. Lasers in chemical processing

    International Nuclear Information System (INIS)

    Davis, J.I.

    1982-01-01

    The high cost of laser energy is the crucial issue in any potential laser-processing application. It is expensive relative to other forms of energy and to most bulk chemicals. We show those factors that have previously frustrated attempts to find commercially viable laser-induced processes for the production of materials. Having identified the general criteria to be satisfied by an economically successful laser process and shown how these imply the laser-system requirements, we present a status report on the uranium laser isotope separation (LIS) program at the Lawrence Livermore National Laboratory

  7. Laser in urology. Laser i urologien

    Energy Technology Data Exchange (ETDEWEB)

    Breisland, H.O. (Aker Sykehus, Oslo (Norway))

    1991-09-01

    The neodymium YAG laser is particularly suited for endoscopic urologic surgery because the YAG laser light can be conducted in flexible fibers. Superficial bladder tumours can be treated under local anaesthesia in the outpatient department. The frequency of local recurrences is low, significantly lower than after electrosection or electrocoagulation. Selected cases of T2-muscle invasive bladder tumours can be cured with laser coagulation applied subsequently to transurethral resection. Combined treatment with electrosection and laser coagulation of localized prostatic cancer is a promising method which compares favourably with results obtained by other treatment modalities. Tumours in the upper urinary tract can be laser-treated through ureteroscopes or nephroscopes, but the treatment should be limited to low stage, low grade tumours. Laser is the treatment of choice for intraurethral condylomatas. Laser treatment of penil carcinoma gives excellent cosmetic and functional results and few local recurrences. Laser lithotripsy is a new technique for treatment of ureteric stones and photodynamic laser therapy is a promising tecnique for treatment of carcinoma in situ in the bladder empithelium. However, neither of these techniques are available for clinical use in Norway as yet. 17 refs., 3 figs., 1 tabs.

  8. Laser materials processing with diode lasers

    OpenAIRE

    Li, Lin; Lawrence, Jonathan; Spencer, Julian T.

    1996-01-01

    Laser materials processing is currently dominated by CO2, Nd-YAG and Excimer lasers. Continuous advances in semiconductor laser technology over the last decade have increased the average power output of the devices annualy by two fold, resulting in the commercial availability of the diode lasers today with delivery output powers in excess of 60W in CW mode and 5kW in qasi-CW mode. The advantages of compactness, high reliability, high efficiency and potential low cost, due to the mass producti...

  9. 1982 laser program annual report

    International Nuclear Information System (INIS)

    Hendricks, C.D.; Grow, G.R.

    1983-08-01

    This annual report covers the following eight sections: (1) laser program review, (2) laser systems and operation, (3) target design, (4) target fabrication, (5) fusion experiments program, (6) Zeus laser project, (7) laser research and development, and (8) energy applications

  10. Design, Construction and Calibration of a Near-Infrared Four-Color Pyrometry System for Laser-Driven High Pressure Experiments

    Science.gov (United States)

    Ali, S. J.; Jeanloz, R.; Collins, G.; Spaulding, D. K.

    2010-12-01

    Current dynamic compression experiments, using both quasi-isentropic and shock-compression, allow access to pressure-temperature states both on and off the principle Hugoniot and over a wide range of conditions of direct relevance to planetary interiors. Such studies necessitate reliable temperature measurements below 4000-5000 K. Such relatively low temperature states are also of particular interest for materials such as methane and water that do not experience much heating under shock compression. In order to measure these temperatures as a function of time across the sample, a four-color, near-infrared pyrometry system is being developed for use at the Janus laser facility (LLNL) with channels at wavelengths of 932nm-1008nm, 1008nm-1108nm, 1108nm-1208nm, and 1208nm-1300nm. Each color band is fiber-coupled to an InGaAs PIN photodiode with a rise time of less than 60 ps, read using an 18 GHz oscilloscope in order to ensure time resolutions of under 200 ps. This will allow for high temporal resolution measurements of laser-driven shock compression experiments with total durations of 5-15 ns as well as correlation with simultaneous time-resolved velocity interferometry and visual-wavelength pyrometry. Calibration of the system is being accomplished using quartz targets, as the EOS for quartz is well known, along with a calibrated integrating sphere of known spectral radiance.

  11. Growth of strained InGaAs/GaAs quantum wells and index guided injection lasers over nonplanar substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Arent, D.J.; Galeuchet, Y.D.; Nilsson, S.; Meier, H.P.

    1990-01-01

    Strained InGaAs/GaAs quantum wells were grown on nonplanar substrates by molecular beam epitaxy and studied by scanning electron microscopy and low temperature spatially and spectrally resolved cathodoluminescence spectroscopy. For (100) ridges and grooves formed with (311)A sidewalls, almost complete removal of In from the strained quantum wells on the (311)A facet is observed. Corresponding increases of In content in the quantum wells grown on the (100) facets indicate that most if not all of the In is displaced from the (311)A facet via interplanar adatom migration. Ga adatom migration is also observed under our growth conditions such that quantum wells grown nominally near the critical layer thickness on structures less than ≅2.5 μm wide are no longer pseudomorphically strained, as detected by luminescence linewidth analysis. We present the first results of strained InGaAs/GaAs index guided injection lasers grown by single-step molecular beam epitaxy over nonplanar substrates and show that differences greater than 50 meV in the effective band gap of a 70 A quantum well can be achieved between the gain region and the nonabsorbing waveguide without relaxing the strain. Room temperature threshold currents as low as 6 mA for 4 μmx750 μm uncoated devices lasing continuously at a wavelength of 1.01 μm have been achieved

  12. Photonic bandgap fiber lasers and multicore fiber lasers for next generation high power lasers

    DEFF Research Database (Denmark)

    Shirakawa, A.; Chen, M.; Suzuki, Y.

    2014-01-01

    Photonic bandgap fiber lasers are realizing new laser spectra and nonlinearity mitigation that a conventional fiber laser cannot. Multicore fiber lasers are a promising tool for power scaling by coherent beam combination. © 2014 OSA....

  13. Laser in operative dentistry

    Directory of Open Access Journals (Sweden)

    E. Yasini

    1994-06-01

    Full Text Available Today laser has a lot of usage in medicine and dentistry. In the field of dentistry, laser is used in soft tissue surgery, sterilization of canals (in root canal therapy and in restorative dentistry laser is used for cavity preparation, caries removal, sealing the grooves (in preventive dentistry, etching enamel and dentin, composite polymerization and removal of tooth sensitivity. The use of Co2 lasers and Nd: YAG for cavity preparation, due to creating high heat causes darkness and cracks around the region of laser radiation. Also due to high temperature of these lasers, pulp damage is inevitable. So today, by using the Excimer laser especially the argon floride type with a wavelength of 193 nm, the problem of heat stress have been solved, but the use of lasers in dentistry, especially for cavity preparation needs more researches and evaluations.

  14. Laser for fusion energy

    International Nuclear Information System (INIS)

    Holzrichter, J.F.

    1995-01-01

    Solid state lasers have proven to be very versatile tools for the study and demonstration of inertial confinement fusion principles. When lasers were first contemplated to be used for the compression of fusion fuel in the late 1950s, the laser output energy levels were nominally one joule and the power levels were 10 3 watts (pulse duration's of 10 -3 sec). During the last 25 years, lasers optimized for fusion research have been increased in power to typically 100,000 joules with power levels approaching 10 14 watts. As a result of experiments with such lasers at many locations, DT target performance has been shown to be consistent with high gain target output. However, the demonstration of ignition and gain requires laser energies of several megajoules. Laser technology improvements demonstrated over the past decade appear to make possible the construction of such multimegajoule lasers at affordable costs. (author)

  15. Radiological protection against lasers

    Energy Technology Data Exchange (ETDEWEB)

    Ballereau, P

    1974-04-01

    A brief description of the biological effects of laser beams is followed by a review of the factors involved in eye and skin damage (factors linked with the nature of lasers and those linked with the organ affected) and a discussion of the problems involved in the determination of threshold exposure levels. Preventive measures are recommended, according to the type of laser (high-energy pulse laser, continuous laser, gas laser). No legislation on the subject exists in France or in Europe. Types of lasers marketed, threshold exposure levels for eye and skin, variations of admissible exposure levels according to wavelength, etc. are presented in tabular form. Nomogram for determination of safe distance for direct vision of a laser is included.

  16. Advances in Fiber Lasers

    National Research Council Canada - National Science Library

    Morse, T

    1999-01-01

    Most of the time of this contract has been devoted toward improvements in optical fiber lasers and toward gathering experience to improve our program in high power, cladding pumped optical fiber lasers...

  17. Laser Processing and Chemistry

    CERN Document Server

    Bäuerle, Dieter

    2011-01-01

    This book gives an overview of the fundamentals and applications of laser-matter interactions, in particular with regard to laser material processing. Special attention is given to laser-induced physical and chemical processes at gas-solid, liquid-solid, and solid-solid interfaces. Starting with the background physics, the book proceeds to examine applications of lasers in “standard” laser machining and laser chemical processing (LCP), including the patterning, coating, and modification of material surfaces. This fourth edition has been enlarged to cover the rapid advances in the understanding of the dynamics of materials under the action of ultrashort laser pulses, and to include a number of new topics, in particular the increasing importance of lasers in various different fields of surface functionalizations and nanotechnology. In two additional chapters, recent developments in biotechnology, medicine, art conservation and restoration are summarized. Graduate students, physicists, chemists, engineers, a...

  18. Fiber Laser Array

    National Research Council Canada - National Science Library

    Simpson, Thomas

    2002-01-01

    ...., field-dependent, loss within the coupled laser array. During this program, Jaycor focused on the construction and use of an experimental apparatus that can be used to investigate the coherent combination of an array of fiber lasers...

  19. ISTEF Laser Radar Program

    National Research Council Canada - National Science Library

    Stryjewski, John

    1998-01-01

    The BMDO Innovative Science and Technology Experimentation Facility (BMDO/ISTEF) laser radar program is engaged in an ongoing program to develop and demonstrate advanced laser radar concepts for Ballistic Missile Defense (BMD...

  20. Wavelength sweepable laser source

    DEFF Research Database (Denmark)

    2014-01-01

    Wavelength sweepable laser source is disclosed, wherein the laser source is a semiconductor laser source adapted for generating laser light at a lasing wavelength. The laser source comprises a substrate, a first reflector, and a second reflector. The first and second reflector together defines...... and having a rest position, the second reflector and suspension together defining a microelectromechanical MEMS oscillator. The MEMS oscillator has a resonance frequency and is adapted for oscillating the second reflector on either side of the rest position.; The laser source further comprises electrical...... connections adapted for applying an electric field to the MEMS oscillator. Furthermore, a laser source system and a method of use of the laser source are disclosed....

  1. Laser surgery - skin

    Science.gov (United States)

    ... Bleeding Problem not going away Infection Pain Scarring Skin color changes Some laser surgery is done when you are asleep and ... TG, Elston DM, eds. Andrews' Diseases of the Skin: Clinical ... lasers, lights, and tissue interactions. In: Hruza GJ, Avram ...

  2. Laser in operative dentistry

    OpenAIRE

    E. Yasini; Gh. Rahbari; A. Matorian

    1994-01-01

    Today laser has a lot of usage in medicine and dentistry. In the field of dentistry, laser is used in soft tissue surgery, sterilization of canals (in root canal therapy) and in restorative dentistry laser is used for cavity preparation, caries removal, sealing the grooves (in preventive dentistry), etching enamel and dentin, composite polymerization and removal of tooth sensitivity. The use of Co2 lasers and Nd: YAG for cavity preparation, due to creating high heat causes darkness and cracks...

  3. Tunable laser optics

    CERN Document Server

    Duarte, FJ

    2015-01-01

    This Second Edition of a bestselling book describes the optics and optical principles needed to build lasers. It also highlights the optics instrumentation necessary to characterize laser emissions and focuses on laser-based optical instrumentation. The book emphasizes practical and utilitarian aspects of relevant optics including the essential theory. This revised, expanded, and improved edition contains new material on tunable lasers and discusses relevant topics in quantum optics.

  4. Laser cutting system

    Science.gov (United States)

    Dougherty, Thomas J

    2015-03-03

    A workpiece cutting apparatus includes a laser source, a first suction system, and a first finger configured to guide a workpiece as it moves past the laser source. The first finger includes a first end provided adjacent a point where a laser from the laser source cuts the workpiece, and the first end of the first finger includes an aperture in fluid communication with the first suction system.

  5. Application of Various Lasers to Laser Trimming Resistance System

    Institute of Scientific and Technical Information of China (English)

    SUN Ji-feng

    2007-01-01

    Though the laser trimming resistance has been an old laser machining industry for over 30 years, the development of technology brings new alternative lasers which can be used for the traditional machining. The paper describes application of various lasers to laser trimming resistance system including early traditional krypton arc lamp pumped Nd:YAG to laser, modern popular diode pumped solid state laser and the present advanced harmonic diode pumped solid state laser. Using the new alternative lasers in the laser trimming resistance system can dramatically improve the yields and equipment performance.

  6. Laser technologies for laser accelerators. Annual report

    International Nuclear Information System (INIS)

    1985-01-01

    The primary result of the work reported is the determination of laser system architectures that satsify the requirements of high luminosity, high energy (about 1 TeV), electron accelerators. It has been found that high laser efficiency is a very hard driver for these accelerators as the total average laser output optical power is likely to fall above 10 MW. The luminosity requires rep rates in the kHz range, and individual pulse lengths in the 1-10 psec range are required to satisfy acceleration gradient goals. CO 2 and KrF lasers were chosen for study because of their potential to simultaneously satisfy the given requirements. Accelerator luminosity is reviewed, and requirements on laser system average power and rep rate are determined as a function of electron beam bunch parameters. Laser technologies are reviewed, including CO 2 , excimers, solid state, and free electron lasers. The proposed accelerator mechanisms are summarized briefly. Work on optical transport geometries for near and far field accelerators are presented. Possible exploitation of the CO 2 and DrF laser technology to generate the required pulse lengths, rep rates, and projected efficiencies is illustrated and needed development work is suggested. Initial efforts at developing a 50 GeV benchmark conceptual design and a 100 MeV demonstration experiment conceptual design are presented

  7. Laser induced pyrolysis techniques

    International Nuclear Information System (INIS)

    Vanderborgh, N.E.

    1976-01-01

    The application of laser pyrolysis techniques to the problems of chemical analysis is discussed. The processes occurring during laser pyrolysis are first briefly reviewed. The problems encountered in laser pyrolysis gas chromatography are discussed using the analysis of phenanthrene and binary hydrocarbons. The application of this technique to the characterization of naturally occurring carbonaceous material such as oil shales and coal is illustrated

  8. Solar pumped laser

    Science.gov (United States)

    Lee, J. H.; Hohl, F.; Weaver, W. R. (Inventor)

    1984-01-01

    A solar pumped laser is described in which the lasant is a gas that will photodissociate and lase when subjected to sunrays. Sunrays are collected and directed onto the gas lasant to cause it to lase. Applications to laser propulsion and laser power transmission are discussed.

  9. Introducing the Yellow Laser

    Science.gov (United States)

    Lincoln, James

    2018-01-01

    The author has acquired a yellow laser with the specific wavelength of 589 nm. Because this is the first time such a laser has been discussed in this journal, I feel it is appropriate to provide a discussion of its function and capabilities. Normal laser safety should be employed, such as not pointing it into eyes or at people, and using eye…

  10. Coatings for laser fusion

    International Nuclear Information System (INIS)

    Lowdermilk, W.H.

    1981-01-01

    Optical coatings are used in lasers systems for fusion research to control beam propagation and reduce surface reflection losses. The performance of coatings is important in the design, reliability, energy output, and cost of the laser systems. Significant developments in coating technology are required for future lasers for fusion research and eventual power reactors

  11. uv dye lasers

    International Nuclear Information System (INIS)

    Abakumov, G.A.; Fadeev, V.V.; Khokhlov, R.V.; Simonov, A.P.

    1975-01-01

    The most important property of visible dye lasers, that is, continuous wavelength tuning, stimulated the search for dyes capable to lase in uv. They were found in 1968. Now the need for tunable uv lasers for applications in spectroscopy, photochemistry, isotope separation, remote air and sea probing, etc. is clearly seen. A review of some recent advances in uv dye lasers is reviewed

  12. LaserFest Celebration

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Alan Chodos; Elizabeth A. Rogan

    2011-08-25

    LaserFest was the yearlong celebration, during 2010, of the 50th anniversary of the demonstration of the first working laser. The goals of LaserFest were: to highlight the impact of the laser in its manifold commercial, industrial and medical applications, and as a tool for ongoing scientific research; to use the laser as one example that illustrates, more generally, the route from scientific innovation to technological application; to use the laser as a vehicle for outreach, to stimulate interest among students and the public in aspects of physical science; to recognize and honor the pioneers who developed the laser and its many applications; to increase awareness among policymakers of the importance of R&D funding as evidenced by such technology as lasers. One way in which LaserFest sought to meet its goals was to encourage relevant activities at a local level all across the country -- and also abroad -- that would be identified with the larger purposes of the celebration and would carry the LaserFest name. Organizers were encouraged to record and advertise these events through a continually updated web-based calendar. Four projects were explicitly detailed in the proposals: 1) LaserFest on the Road; 2) Videos; 3) Educational material; and 4) Laser Days.

  13. Laser beam cutting method. Laser ko ni yoru kaitai koho

    Energy Technology Data Exchange (ETDEWEB)

    Kutsumizu, A. (Obayashi Corp., Osaka (Japan))

    1991-07-01

    In this special issue paper concerning the demolition of concrete structures, was introduced a demolition of concrete structures using laser, of which practical application is expected due to the remarkable progress of generating power and efficiency of laser radiator. The characteristics of laser beam which can give a temperature of one million centigrade at the irradiated spot, the laser radiator consisting of laser medium, laser resonator and pumping apparatus, and the laser kinds for working, such as CO{sub 2} laser, YAG laser and CO laser, were described. The basic constitution of laser cutting equipment consisting of large generating power radiator, beam transmitter, beam condenser, and nozzle for working was also illustrated. Furthermore, strong and weak points in the laser cutting for concrete and reinforcement were enumerated. Applications of laser to cutting of reinforced and unreinforced concrete constructions were shown, and the concept and safety measure for application of laser to practical demolition was discussed. 5 refs., 8 figs.

  14. Introduction to laser technology

    CERN Document Server

    Hitz, C Breck; Hecht, Jeff; Hitz, C Breck; John Wiley & Sons

    2001-01-01

    Electrical Engineering Introduction to Laser Technology , Third Edition. Would you like to know how a laser works, and how it can be modified for your own specific tasks? This intuitive third edition-previously published as Understanding Laser Technology , First and Second Editions-introduces engineers, scientists, technicians, and novices alike to the world of modern lasers, without delving into the mathematical details of quantum electronics. It is the only introductory text on the market today that explains the underlying physics and engineering applicable to all lasers. A unique combinatio.

  15. Quantum well lasers

    CERN Document Server

    Zory, Jr, Peter S; Kelley, Paul

    1993-01-01

    This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist.* The first comprehensive book-length treatment of quantum well lasers* Provides a detailed treatment

  16. Coherent laser beam combining

    CERN Document Server

    Brignon, Arnaud

    2013-01-01

    Recently, the improvement of diode pumping in solid state lasers and the development of double clad fiber lasers have allowed to maintain excellent laser beam quality with single mode fibers. However, the fiber output power if often limited below a power damage threshold. Coherent laser beam combining (CLBC) brings a solution to these limitations by identifying the most efficient architectures and allowing for excellent spectral and spatial quality. This knowledge will become critical for the design of the next generation high-power lasers and is of major interest to many industrial, environme

  17. The laser thermonuclear fusion

    International Nuclear Information System (INIS)

    Coutant, J.; Dautray, R.; Decroisette, M.; Watteau, J.P.

    1987-01-01

    Principle of the thermonuclear fusion by inertial confinement: required characteristics of the deuterium-tritium plasma and of the high power lasers to be used Development of high power lasers: active media used; amplifiers; frequency conversion; beam quality; pulse conditioning; existing large systems. The laser-matter interaction: collision and collective interaction of the laser radiation with matter; transport of the absorbed energy; heating and compression of deuterium-tritium; diagnoses and their comparison with the numerical simulation of the experiment; performances. Conclusions: difficulties to overcome; megajoule lasers; other energy source: particles beams [fr

  18. Laser Cutting, Development Trends

    DEFF Research Database (Denmark)

    Olsen, Flemming Ove

    1999-01-01

    In this paper a short review of the development trends in laser cutting will be given.The technology, which is the fastest expanding industrial production technology will develop in both its core market segment: Flat bed cutting of sheet metal, as it will expand in heavy industry and in cutting...... of 3-dimensional shapes.The CO2-laser will also in the near future be the dominating laser source in the market, although the new developments in ND-YAG-lasers opens for new possibilities for this laser type....

  19. Lasers in space.

    CSIR Research Space (South Africa)

    Michaelis, MM

    2008-04-01

    Full Text Available cube, laser beam reflectors, placed on the Moon half a century ago. These early achievements will soon be followed by a plethora of experiments involving lasers in low earth orbit (LEO) or at Lagrange points. And not much later, laser communications... will stretch out as far as Mars and beyond. One important low Earth orbit (LEO) application is the removal of space debris by Earth based or LEO relayed lasers as promoted by Phipps et al.3. Another is military communication. The prominent L1 laser space...

  20. Tunable laser applications

    CERN Document Server

    Duarte, FJ

    2008-01-01

    Introduction F. J. Duarte Spectroscopic Applications of Tunable Optical Parametric Oscillators B. J. Orr, R. T. White, and Y. He Solid-State Dye Lasers Costela, I. García-Moreno, and R. Sastre Tunable Lasers Based on Dye-Doped Polymer Gain Media Incorporating Homogeneous Distributions of Functional Nanoparticles F. J. Duarte and R. O. James Broadly Tunable External-Cavity Semiconductor Lasers F. J. Duarte Tunable Fiber Lasers T. M. Shay and F. J. Duarte Fiber Laser Overview and Medical Applications

  1. New solid laser: Ceramic laser. From ultra stable laser to ultra high output laser

    International Nuclear Information System (INIS)

    Ueda, Kenichi

    2006-01-01

    An epoch-making solid laser is developed. It is ceramic laser, polycrystal, which is produced as same as glass and shows ultra high output. Ti 3+ :Al 2 O 3 laser crystal and the CPA (chirped pulse amplification) technique realized new ultra high output lasers. Japan has developed various kinds of ceramic lasers, from 10 -2 to 67 x 10 3 w average output, since 1995. These ceramic lasers were studied by gravitational radiation astronomy. The scattering coefficient of ceramic laser is smaller than single crystals. The new fast ignition method is proposed by Institute of Laser Engineering of Osaka University, Japan. Ultra-intense short pulse laser can inject the required energy to the high-density imploded core plasma within the core disassembling time. Ti 3+ :Al 2 O 3 crystal for laser, ceramic YAG of large caliber for 100 kW, transparent laser ceramic from nano-crystals, crystal grain and boundary layer between grains, the scattering coefficient of single crystal and ceramic, and the derived release cross section of Yb:YAG ceramic are described. (S.Y.)

  2. Advanced lasers for fusion

    International Nuclear Information System (INIS)

    Krupke, W.F.; George, E.V.; Haas, R.A.

    1979-01-01

    Laser drive systems' performance requirements for fusion reactors are developed following a review of the principles of inertial confinement fusion and of the technical status of fusion research lasers (Nd:glass; CO 2 , iodine). These requirements are analyzed in the context of energy-storing laser media with respect to laser systems design issues: optical damage and breakdown, medium excitation, parasitics and superfluorescence depumping, energy extraction physics, medium optical quality, and gas flow. Three types of energy-storing laser media of potential utility are identified and singled out for detailed review: (1) Group VI atomic lasers, (2) rare earth solid state hybrid lasers, and (3) rare earth molecular vapor lasers. The use of highly-radiative laser media, particularly the rare-gas monohalide excimers, are discussed in the context of short pulse fusion applications. The concept of backward wave Raman pulse compression is considered as an attractive technique for this purpose. The basic physics and device parameters of these four laser systems are reviewed and conceptual designs for high energy laser systems are presented. Preliminary estimates for systems efficiencies are given. (Auth.)

  3. Micromachining with copper lasers

    Science.gov (United States)

    Knowles, Martyn R. H.; Bell, Andy; Foster-Turner, Gideon; Rutterford, Graham; Chudzicki, J.; Kearsley, Andrew J.

    1997-04-01

    In recent years the copper laser has undergone extensive development and has emerged as a leading and unique laser for micromachining. The copper laser is a high average power (10 - 250 W), high pulse repetition rate (2 - 32 kHz), visible laser (511 nm and 578 nm) that produces high peak power (typically 200 kW), short pulses (30 ns) and very good beam quality (diffraction limited). This unique set of laser parameters results in exceptional micro-machining in a wide variety of materials. Typical examples of the capabilities of the copper laser include the drilling of small holes (10 - 200 micrometer diameter) in materials as diverse as steel, ceramic, diamond and polyimide with micron precision and low taper (less than 1 degree) cutting and profiling of diamond. Application of the copper laser covers the electronic, aerospace, automotive, nuclear, medical and precision engineering industries.

  4. Laser Applications in Orthodontics

    Science.gov (United States)

    Heidari, Somayeh; Torkan, Sepideh

    2013-01-01

    A laser is a collimated single wavelength of light which delivers a concentrated source of energy. Soon after different types of lasers were invented, investigators began to examine the effects of different wavelengths of laser energy on oral tissues, routine dental procedures and experimental applications. Orthodontists, along with other specialist in different fields of dentistry, can now benefit from several different advantages that lasers provide during the treatment process, from the beginning of the treatment, when separators are placed, to the time of resin residues removal from the tooth surface at the end of orthodontic treatment. This article outlines some of the most common usages of laser beam in orthodontics and also provides a comparison between laser and other conventional method that were the standard of care prior to the advent of laser in this field. PMID:25606324

  5. ORION laser target diagnostics

    International Nuclear Information System (INIS)

    Bentley, C. D.; Edwards, R. D.; Andrew, J. E.; James, S. F.; Gardner, M. D.; Comley, A. J.; Vaughan, K.; Horsfield, C. J.; Rubery, M. S.; Rothman, S. D.; Daykin, S.; Masoero, S. J.; Palmer, J. B.; Meadowcroft, A. L.; Williams, B. M.; Gumbrell, E. T.; Fyrth, J. D.; Brown, C. R. D.; Hill, M. P.; Oades, K.

    2012-01-01

    The ORION laser facility is one of the UK's premier laser facilities which became operational at AWE in 2010. Its primary mission is one of stockpile stewardship, ORION will extend the UK's experimental plasma physics capability to the high temperature, high density regime relevant to Atomic Weapons Establishment's (AWE) program. The ORION laser combines ten laser beams operating in the ns regime with two sub ps short pulse chirped pulse amplification beams. This gives the UK a unique combined long pulse/short pulse laser capability which is not only available to AWE personnel but also gives access to our international partners and visiting UK academia. The ORION laser facility is equipped with a comprehensive suite of some 45 diagnostics covering optical, particle, and x-ray diagnostics all able to image the laser target interaction point. This paper focuses on a small selection of these diagnostics.

  6. ORION laser target diagnostics.

    Science.gov (United States)

    Bentley, C D; Edwards, R D; Andrew, J E; James, S F; Gardner, M D; Comley, A J; Vaughan, K; Horsfield, C J; Rubery, M S; Rothman, S D; Daykin, S; Masoero, S J; Palmer, J B; Meadowcroft, A L; Williams, B M; Gumbrell, E T; Fyrth, J D; Brown, C R D; Hill, M P; Oades, K; Wright, M J; Hood, B A; Kemshall, P

    2012-10-01

    The ORION laser facility is one of the UK's premier laser facilities which became operational at AWE in 2010. Its primary mission is one of stockpile stewardship, ORION will extend the UK's experimental plasma physics capability to the high temperature, high density regime relevant to Atomic Weapons Establishment's (AWE) program. The ORION laser combines ten laser beams operating in the ns regime with two sub ps short pulse chirped pulse amplification beams. This gives the UK a unique combined long pulse/short pulse laser capability which is not only available to AWE personnel but also gives access to our international partners and visiting UK academia. The ORION laser facility is equipped with a comprehensive suite of some 45 diagnostics covering optical, particle, and x-ray diagnostics all able to image the laser target interaction point. This paper focuses on a small selection of these diagnostics.

  7. Robot-laser system

    International Nuclear Information System (INIS)

    Akeel, H.A.

    1987-01-01

    A robot-laser system is described for providing a laser beam at a desired location, the system comprising: a laser beam source; a robot including a plurality of movable parts including a hollow robot arm having a central axis along which the laser source directs the laser beam; at least one mirror for reflecting the laser beam from the source to the desired location, the mirror being mounted within the robot arm to move therewith and relative thereto to about a transverse axis that extends angularly to the central axis of the robot arm; and an automatic programmable control system for automatically moving the mirror about the transverse axis relative to and in synchronization with movement of the robot arm to thereby direct the laser beam to the desired location as the arm is moved

  8. Laser safety in dentistry

    Science.gov (United States)

    Wigdor, Harvey A.

    1997-05-01

    One of the major causes of anxiety in the dental clinic is the dental handpiece. Because dentists wish to provide a method which can replace the drill there has often been a premature use of the laser in dentistry. Various lasers have been introduced into the clinic before research has shown the laser used is of clinical benefit. Any new treatment method must not compromise the health of the patient being treated. Thus a method of evaluating the clinical abilities of dentists and their understanding the limitations of the laser used must be developed. Dentist must be trained in the basic interaction of the laser on oral tissues. The training has to concentrate on the variation of the laser wavelength absorption in the different tissues of the oral cavity. Because of the differences in the optical properties of these tissues great care must be exercised by practitioners using lasers on patients.

  9. Lasers in materials science

    CERN Document Server

    Ossi, Paolo; Zhigilei, Leonid

    2014-01-01

    This book covers various aspects of lasers in materials science, including a comprehensive overview on basic principles of laser-materials interactions and applications enabled by pulsed laser systems.  The material is organized in a coherent way, providing the reader with a harmonic architecture. While systematically covering the major current and emerging areas of lasers processing applications, the Volume provides examples of targeted modification of material properties achieved through careful control of the processing conditions and laser irradiation parameters. Special emphasis is placed on specific strategies aimed at nanoscale control of material structure and properties to match the stringent requirements of modern applications.  Laser fabrication of novel nanomaterials, which expands to the domains of photonics, photovoltaics, sensing, and biomedical applications, is also discussed in the Volume. This book assembles chapters based on lectures delivered at the Venice International School on Lasers...

  10. Alternate laser fusion drivers

    International Nuclear Information System (INIS)

    Pleasance, L.D.

    1979-11-01

    One objective of research on inertial confinement fusion is the development of a power generating system based on this concept. Realization of this goal will depend on the availability of a suitable laser or other system to drive the power plant. The primary laser systems used for laser fusion research, Nd 3+ : Glass and CO 2 , have characteristics which may preclude their use for this application. Glass lasers are presently perceived to be incapable of sufficiently high average power operation and the CO 2 laser may be limited by and issues associated with target coupling. These general perceptions have encouraged a search for alternatives to the present systems. The search for new lasers has been directed generally towards shorter wavelengths; most of the new lasers discovered in the past few years have been in the visible and ultraviolet region of the spectrum. Virtually all of them have been advocated as the most promising candidate for a fusion driver at one time or another

  11. Flexible Laser Metal Cutting

    DEFF Research Database (Denmark)

    Villumsen, Sigurd; Jørgensen, Steffen Nordahl; Kristiansen, Morten

    2014-01-01

    This paper describes a new flexible and fast approach to laser cutting called ROBOCUT. Combined with CAD/CAM technology, laser cutting of metal provides the flexibility to perform one-of-a-kind cutting and hereby realises mass production of customised products. Today’s laser cutting techniques...... possess, despite their wide use in industry, limitations regarding speed and geometry. Research trends point towards remote laser cutting techniques which can improve speed and geometrical freedom and hereby the competitiveness of laser cutting compared to fixed-tool-based cutting technology...... such as punching. This paper presents the concepts and preliminary test results of the ROBOCUT laser cutting technology, a technology which potentially can revolutionise laser cutting....

  12. Lasers: principles, applications and energetic measures

    International Nuclear Information System (INIS)

    Subran, C.; Sagaut, J.; Lapointe, S.

    2009-01-01

    After having recalled the principles of a laser and the properties of the laser beam, the authors describe the following different types of lasers: solid state lasers, fiber lasers, semiconductor lasers, dye lasers and gas lasers. Then, their applications are given. Very high energy lasers can reproduce the phenomenon of nuclear fusion of hydrogen atoms. (O.M.)

  13. Lasers in space

    Science.gov (United States)

    Michaelis, M. M.; Forbes, A.; Bingham, R.; Kellett, B. J.; Mathye, A.

    2008-05-01

    A variety of laser applications in space, past, present, future and far future are reviewed together with the contributions of some of the scientists and engineers involved, especially those that happen to have South African connections. Historically, two of the earliest laser applications in space, were atmospheric LIDAR and lunar ranging. These applications involved atmospheric physicists, several astronauts and many of the staff recruited into the Soviet and North American lunar exploration programmes. There is a strong interest in South Africa in both LIDAR and lunar ranging. Shortly after the birth of the laser (and even just prior) theoretical work on photonic propulsion and space propulsion by laser ablation was initiated by Georgii Marx, Arthur Kantrowitz and Eugen Saenger. Present or near future experimental programs are developing in the following fields: laser ablation propulsion, possibly coupled with rail gun or gas gun propulsion; interplanetary laser transmission; laser altimetry; gravity wave detection by space based Michelson interferometry; the de-orbiting of space debris by high power lasers; atom laser interferometry in space. Far future applications of laser-photonic space-propulsion were also pioneered by Carl Sagan and Robert Forward. They envisaged means of putting Saenger's ideas into practice. Forward also invented a laser based method for manufacturing solid antimatter or SANTIM, well before the ongoing experiments at CERN with anti-hydrogen production and laser-trapping. SANTIM would be an ideal propellant for interstellar missions if it could be manufactured in sufficient quantities. It would be equally useful as a power source for the transmission of information over light year distances. We briefly mention military lasers. Last but not least, we address naturally occurring lasers in space and pose the question: "did the Big Bang lase?"

  14. Laser system using ultra-short laser pulses

    Science.gov (United States)

    Dantus, Marcos [Okemos, MI; Lozovoy, Vadim V [Okemos, MI; Comstock, Matthew [Milford, MI

    2009-10-27

    A laser system using ultrashort laser pulses is provided. In another aspect of the present invention, the system includes a laser, pulse shaper and detection device. A further aspect of the present invention employs a femtosecond laser and binary pulse shaping (BPS). Still another aspect of the present invention uses a laser beam pulse, a pulse shaper and a SHG crystal.

  15. Designing of Raman laser

    International Nuclear Information System (INIS)

    Zidan, M. D.; Al-Awad, F.; Alsous, M. B.

    2005-01-01

    In this work, we describe the design of the Raman laser pumped by Frequency doubled Nd-YAG laser (λ=532 nm) to generate new laser wavelengths by shifting the frequency of the Nd-YAG laser to Stokes region (λ 1 =683 nm, λ 2 =953.6 nm, λ 3 =1579.5 nm) and Antistokes region (λ ' 1 =435 nm, λ ' 2 =369.9 nm, λ ' 3=319.8 nm). Laser resonator has been designed to increase the laser gain. It consists of two mirrors, the back mirror transmits the pump laser beam (λ=532 nm) through the Raman tube and reflects all other generated Raman laser lines. Four special front mirrors were made to be used for the four laser lines λ 1 =683 nm, λ 2 =953.6 nm and λ ' 1 = 435 nm, λ ' 2 =369.9 nm. The output energy for the lines υ 1 s, υ 2 s, υ 1 as,υ 2 as was measured. The output energy of the Raman laser was characterized for different H 2 pressure inside the tube. (Author)

  16. Laser program overview

    International Nuclear Information System (INIS)

    Storm, E.; Coleman, L.W.

    1985-01-01

    The objectives of the Lawrence Livermore National Laboratory Laser Fusion program are to understand and develop the science and technology of inertial confinement fusion (ICF), and to utilize ICF in short- and long-term military applications, and, in the long-term, as a candidate for central-station civilian power generation. In 1984, using the Novette laser system, the authors completed experiments showing the very favorable scaling of laser-plama interactions with short-wavelength laser light. Their Novette experiments have unequivocally shown that short laser wavelength, i.e., less than 1 μm, is required to provide the drive necessary for efficient compression, ignition, and burn of DT fusion fuel. In other experiments with Novette, the authors made the first unambiguous observation of amplified spontaneous emission in the soft x-ray regime. The authors also conducted military applications and weapons physics experiments, which they discuss in detail in the classified volume of our Laser Program Annual Report. In the second thrust, advanced laser studies, they develop and test the concepts, components, and materials for present and future laser systems. Over the years, this has meant providing the technology base and scientific advances necessary to construct and operate a succession of six evermore-powerful laser systems. The latest of these, Nova, a 100-TW/100-kJ-class laser system, was completed in 1984. The Nd:glass laser continues to be the most effective and versatile tool for ICF and weapons physics because of its scalability in energy, the ability to efficiently convert its 1=μm output to shorter wavelengths, its ability to provide flexible, controlled pulse shaping, and its capability to adapt to a variety of irradiation and focusing geometries. For these reasons, many of our advanced laser studies are in areas appropriate to solid state laser technologies

  17. Laser pumped lasers for isotope separation

    International Nuclear Information System (INIS)

    Fry, S.M.

    1976-01-01

    A study of the isotope separation laser requirements reveals that high pressure polyatomic molecular gas laser pumped lasers can attain the necessary characteristics including tunability, energy output, pulse width, and repetition rate. The results of a search, made for molecules meeting the appropriate requirements for one of several pump schemes utilizing a CO 2 laser and with output in the 12 μm or 16μm wavelength range, are presented. Several methods of pumping are reviewed and two novel pump schemes are presented. A laser pumped laser device design is given, and operation of this device and associated diagnostic equipment is confirmed by repeating experiments in OCS and NH 3 . The results of OCS laser experiments show that an improvement in pump rate and output per unit length is obtained with the device, using a wedged transverse pumping scheme. A new multi-line laser system in NH 3 pumped by a TEA CO 2 laser is reported. More than forty transitions spanning the wavelength range of 9.2 to 13.8 μm are observed and identified. A strong output at 12.08 μm is one of the closest lines yet found to the required laser isotope separation wavelength. Far infrared emission near 65 μm is observed and is responsible for populating levels which lase in pure ammonia near 12.3 μm. Buffer gas (e.g., N 2 or He) pressures of approximately 40--800 torr cause energy transfer by collision-induced rotationaltransitions from the pumped antisymmetric to the lasing symmetric levels in the nu 2 = 1 band of ammonia. Most of the observed lines are aP(J,K) transitions which originate from the nu 2 /sup s/ band. Measurements of the pressure dependence of the laser output shows that some lines lase at pressures greater than one atmosphere. Transient behavior of the 12.08 μm line is calculated from a simplified analytic model and these calculations are compared to the experimental results

  18. Pattern Laser Annealing by a Pulsed Laser

    Science.gov (United States)

    Komiya, Yoshio; Hoh, Koichiro; Murakami, Koichi; Takahashi, Tetsuo; Tarui, Yasuo

    1981-10-01

    Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates. To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.

  19. High energy HF pulsed lasers

    International Nuclear Information System (INIS)

    Patterson, E.L.; Gerber, R.A.

    1976-01-01

    Recent experiments show that pulsed HF lasers are capable of producing high energy with good efficiency. Preliminary experiments show that the laser radiation from the high-gain medium can be controlled with a low-power probe laser beam or with low-level feedback. These results indicate that the HF laser may have potential for second-generation laser fusion experiments

  20. Laser Safety Inspection Criteria

    International Nuclear Information System (INIS)

    Barat, K

    2005-01-01

    A responsibility of the Laser Safety Officer (LSO) is to perform laser safety audits. The American National Standard Z136.1 Safe use of Lasers references this requirement in several sections: (1) Section 1.3.2 LSO Specific Responsibilities states under Hazard Evaluation, ''The LSO shall be responsible for hazards evaluation of laser work areas''; (2) Section 1.3.2.8, Safety Features Audits, ''The LSO shall ensure that the safety features of the laser installation facilities and laser equipment are audited periodically to assure proper operation''; and (3) Appendix D, under Survey and Inspections, it states, ''the LSO will survey by inspection, as considered necessary, all areas where laser equipment is used''. Therefore, for facilities using Class 3B and or Class 4 lasers, audits for laser safety compliance are expected to be conducted. The composition, frequency and rigueur of that inspection/audit rests in the hands of the LSO. A common practice for institutions is to develop laser audit checklists or survey forms. In many institutions, a sole Laser Safety Officer (LSO) or a number of Deputy LSO's perform these audits. For that matter, there are institutions that request users to perform a self-assessment audit. Many items on the common audit list and the associated findings are subjective because they are based on the experience and interest of the LSO or auditor in particular items on the checklist. Beam block usage is an example; to one set of eyes a particular arrangement might be completely adequate, while to another the installation may be inadequate. In order to provide more consistency, the National Ignition Facility Directorate at Lawrence Livermore National Laboratory (NIF-LLNL) has established criteria for a number of items found on the typical laser safety audit form. These criteria are distributed to laser users, and they serve two broad purposes: first, it gives the user an expectation of what will be reviewed by an auditor, and second, it is an

  1. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  2. Nuclear-pumped lasers

    CERN Document Server

    Prelas, Mark

    2016-01-01

    This book focuses on Nuclear-Pumped Laser (NPL) technology and provides the reader with a fundamental understanding of NPLs, a review of research in the field, and exploration of large scale NPL system design and applications. Early chapters look at the fundamental properties of lasers, nuclear-pumping and nuclear reactions that may be used as drivers for nuclear-pumped lasers. The book goes on to explore the efficient transport of energy from the ionizing radiation to the laser medium and then the operational characteristics of existing nuclear-pumped lasers. Models based on Mathematica, explanations and a tutorial all assist the reader’s understanding of this technology. Later chapters consider the integration of the various systems involved in NPLs and the ways in which they can be used, including beyond the military agenda. As readers will discover, there are significant humanitarian applications for high energy/power lasers, such as deflecting asteroids, space propulsion, power transmission and mining....

  3. Power Laser Ablation Symposia

    CERN Document Server

    Phipps, Claude

    2007-01-01

    Laser ablation describes the interaction of intense optical fields with matter, in which atoms are selectively driven off by thermal or nonthermal mechanisms. The field of laser ablation physics is advancing so rapidly that its principal results are seen only in specialized journals and conferences. This is the first book that combines the most recent results in this rapidly advancing field with authoritative treatment of laser ablation and its applications, including the physics of high-power laser-matter interaction. Many practical applications exist, ranging from inertial confinement fusion to propulsion of aerostats for pollution monitoring to laser ignition of hypersonic engines to laser cleaning nanoscale contaminants in high-volume computer hard drive manufacture to direct observation of the electronic or dissociative states in atoms and molecules, to studying the properties of materials during 200kbar shocks developed in 200fs. Selecting topics which are representative of such a broad field is difficu...

  4. Laser induced nuclear reactions

    International Nuclear Information System (INIS)

    Ledingham, Ken; McCanny, Tom; Graham, Paul; Fang Xiao; Singhal, Ravi; Magill, Joe; Creswell, Alan; Sanderson, David; Allott, Ric; Neely, David; Norreys, Peter; Santala, Marko; Zepf, Matthew; Watts, Ian; Clark, Eugene; Krushelnick, Karl; Tatarakis, Michael; Dangor, Bucker; Machecek, Antonin; Wark, Justin

    1998-01-01

    Dramatic improvements in laser technology since 1984 have revolutionised high power laser technology. Application of chirped-pulse amplification techniques has resulted in laser intensities in excess of 10 19 W/cm 2 . In the mid to late eighties, C. K. Rhodes and K. Boyer discussed the possibility of shining laser light of this intensity onto solid surfaces and to cause nuclear transitions. In particular, irradiation of a uranium target could induce electro- and photofission in the focal region of the laser. In this paper it is shown that μCi of 62 Cu can be generated via the (γ,n) reaction by a laser with an intensity of about 10 19 Wcm -2

  5. Lasers for isotope separation

    International Nuclear Information System (INIS)

    O'Hair, E.A.; Piltch, M.S.

    1976-01-01

    The Los Alamos Scientific Laboratory is conducting research on uranium enrichment. All processes being studied employ uranium molecules and use lasers to provide isotopic selectivity and enrichment. There are four well-defined infrared frequencies and two ultraviolet frequency bands of interest. The infrared frequencies are outside the range of the available lasers and an extensive research and development activity is currently underway. Lasers are available in the uv bands, however, much development work remains. The specification for the commercial uranium enrichment plant lasers will depend upon the results of the current enrichment experiments, the laser capital cost, reliability, and maintenance cost. For the processes under investigation there are specific photon requirements but latitude in how these requirements can be met. The final laser selections for the pilot plant need not be made until the mid-1980's. Between now and that time as extensive as possible a research and development effort will be maintained

  6. Inertial fusion by laser

    International Nuclear Information System (INIS)

    Dautray, R.; Watteau, J.-P.

    1980-01-01

    Following a brief historical survey of research into the effects of interaction of laser with matter, the principles of fusion by inertial confinement are described and the main parameters and possible levels given. The development of power lasers is then discussed with details of performances of the main lasers used in various laboratories, and with an assessment of the respective merits of neodymium glass, carbon dioxide or iodine lasers. The phenomena of laser radiation and its interaction with matter is then described, with emphasis on the results of experiments concerned with target implosion with the object of compressing and heating the mixture of heavy hydrogen and tritium to be ignited. Finally, a review is made of future possibilities opened up by the use of large power lasers which have recently become operational or are being constructed, and the ground still to be covered before a reactor can be produced [fr

  7. Principles of Lasers

    CERN Document Server

    Svelto, Orazio

    2010-01-01

    This new Fifth Edition of Principles of Lasers incorporates corrections to the previous edition. The text’s essential mission remains the same: to provide a wide-ranging yet unified description of laser behavior, physics, technology, and current applications. Dr. Svelto emphasizes the physical rather than the mathematical aspects of lasers, and presents the subject in the simplest terms compatible with a correct physical understanding. Praise for earlier editions: "Professor Svelto is himself a longtime laser pioneer and his text shows the breadth of his broad acquaintance with all aspects of the field … Anyone mastering the contents of this book will be well prepared to understand advanced treatises and research papers in laser science and technology." (Arthur L. Schawlow, 1981 Nobel Laureate in Physics) "Already well established as a self-contained introduction to the physics and technology of lasers … Professor Svelto’s book, in this lucid translation by David Hanna, can be strongly recommended for...

  8. Atomic iodine laser

    International Nuclear Information System (INIS)

    Fisk, G.A.; Gusinow, M.A.; Hays, A.K.; Padrick, T.D.; Palmer, R.E.; Rice, J.K.; Truby, F.K.; Riley, M.E.

    1978-05-01

    The atomic iodine photodissociation laser has been under intensive study for a number of years. The physics associated with this system is now well understood and it is possible to produce a 0.1 nsec (or longer) near-diffraction-limited laser pulse which can be amplified with negligible temporal distortion and little spatial deformation. The output of either a saturated or unsaturated amplifier consists of a high-fidelity near-diffraction-limited, energetic laser pulse. The report is divided into three chapters. Chapter 1 is a survey of the important areas affecting efficient laser operation and summarizes the findings of Chap. 2. Chapter 2 presents detailed discussions and evaluations pertinent to pumps, chemical regeneration, and other elements in the overall laser system. Chapter 3 briefly discusses those areas that require further work and the nature of the work required to complete the full-scale evaluation of the applicability of the iodine photodissociation laser to the inertial confinement program

  9. Strong field laser physics

    CERN Document Server

    2008-01-01

    Since the invention of the laser in the 1960s, people have strived to reach higher intensities and shorter pulse durations. High intensities and ultrashort pulse durations are intimately related. Recent developments have shown that high intensity lasers also open the way to realize pulses with the shortest durations to date, giving birth to the field of attosecond science (1 asec = 10-18s). This book is about high-intensity lasers and their applications. The goal is to give an up to date introduction to the technology behind these laser systems and to the broad range of intense laser applications. These applications include AMO (atomic molecular and optical) physics, x-ray science, attosecond science, plasma physics and particle acceleration, condensed matter science and laser micromachining, and finally even high-energy physics.

  10. Arduino based laser control

    OpenAIRE

    Bernal Muñoz, Ferran

    2015-01-01

    ARDUINO is a vey usefull platform for prototypes. In this project ARDUINO will be used for controling a Semiconductor Tuneable Laser. [ANGLÈS] Diode laser for communications control based on an Arduino board. Temperature control implementation. Software and hardware protection for the laser implementation. [CASTELLÀ] Control de un láser de comunicaciones ópticas desde el ordenador utilizando una placa Arduino. Implementación de un control de temperatura y protección software y hardware ...

  11. Shiva laser system performance

    International Nuclear Information System (INIS)

    Glaze, J.; Godwin, R.O.; Holzrichter, J.F.

    1978-01-01

    On November 18, 1977, after four years of experimentation, innovation, and construction, the Shiva High Energy Laser facility produced 10.2 kJ of focusable laser energy delivered in a 0.95 ns pulse. The Shiva laser, with its computer control system and delta amplifiers, demonstrated its versatility on May 18, 1978, when the first 20-beam target shot with delta amplifiers focused 26 TW on a target and produced a yield of 7.5 x 10 9 neutrons

  12. Lasers in Ophthalmology

    Institute of Scientific and Technical Information of China (English)

    1992-01-01

    In recent years,lasers have entered every fieldof medicine and especially so in ophthalmol-ogy.The scientific basis of lasers in ophthal-mology is based on three mechanisms:1.Photothermal effectLasers:argon,krypton,dye and diodeA thermal effect is generated when laserenergy is absorbed by pigment leading to in-creased vibration and therefore heat content.A

  13. Laser Journal (Selected Articles),

    Science.gov (United States)

    1982-09-10

    laser is described. The apparatus structure and some experimental results are reported. MATERIAL AND ELEMENT MAGNETO -OPTIC PROPERTIES OF Pr dYb),(1oAI...with a magneto -optical modulator. The measuring system is simple and sensitive, with reading accuracy of ±0.0050 and error 45%. STUDY ON EXPERIMENTAL...laser radiation therapy . He Fang de East Chiia Hospital APPLICATION OF N4d,:Y q LASER TO TREAT INTERNAL HEMERRHOID Zhuo Ruilin Zu Songlin (Shanghai

  14. Laser precision microfabrication

    CERN Document Server

    Sugioka, Koji; Pique, Alberto

    2010-01-01

    Miniaturization and high precision are rapidly becoming a requirement for many industrial processes and products. As a result, there is greater interest in the use of laser microfabrication technology to achieve these goals. This book composed of 16 chapters covers all the topics of laser precision processing from fundamental aspects to industrial applications to both inorganic and biological materials. It reviews the sate of the art of research and technological development in the area of laser processing.

  15. Lasers for the SILVA laser isotope separation process

    International Nuclear Information System (INIS)

    Lapierre, Y.

    1997-01-01

    The main principles of the laser isotope separation process for the production of enriched uranium at lower cost, are reviewed and the corresponding optimal laser characteristics are described. The development of the SILVA laser isotope separation process involved researches in the various domains of pump lasers, dye lasers, laser and optics systems and two test facilities for the feasibility studies which are expected for 1997

  16. High power lasers

    CERN Document Server

    Niku-Lari, A

    1989-01-01

    The use of lasers for the working and treatment of materials is becoming increasingly common in industry. However, certain laser applications, for example, in welding, cutting and drilling, are more widely exploited than others. Whilst the potential of lasers for the surface treatment of metals is well recognised, in practice, this particular application is a relative newcomer. The 24 papers in this volume present the latest research and engineering developments in the use of lasers for processes such as surface melting, surface alloying and cladding, and machining, as well as discussing th

  17. Degenerate band edge laser

    Science.gov (United States)

    Veysi, Mehdi; Othman, Mohamed A. K.; Figotin, Alexander; Capolino, Filippo

    2018-05-01

    We propose a class of lasers based on a fourth-order exceptional point of degeneracy (EPD) referred to as the degenerate band edge (DBE). EPDs have been found in parity-time-symmetric photonic structures that require loss and/or gain; here we show that the DBE is a different kind of EPD since it occurs in periodic structures that are lossless and gainless. Because of this property, a small level of gain is sufficient to induce single-frequency lasing based on a synchronous operation of four degenerate Floquet-Bloch eigenwaves. This lasing scheme constitutes a light-matter interaction mechanism that leads also to a unique scaling law of the laser threshold with the inverse of the fifth power of the laser-cavity length. The DBE laser has the lowest lasing threshold in comparison to a regular band edge laser and to a conventional laser in cavities with the same loaded quality (Q ) factor and length. In particular, even without mirror reflectors the DBE laser exhibits a lasing threshold which is an order of magnitude lower than that of a uniform cavity laser of the same length and with very high mirror reflectivity. Importantly, this novel DBE lasing regime enforces mode selectivity and coherent single-frequency operation even for pumping rates well beyond the lasing threshold, in contrast to the multifrequency nature of conventional uniform cavity lasers.

  18. Gigashot Optical Laser Demonstrator

    Energy Technology Data Exchange (ETDEWEB)

    Deri, R. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-10-13

    The Gigashot Optical Laser Demonstrator (GOLD) project has demonstrated a novel optical amplifier for high energy pulsed lasers operating at high repetition rates. The amplifier stores enough pump energy to support >10 J of laser output, and employs conduction cooling for thermal management to avoid the need for expensive and bulky high-pressure helium subsystems. A prototype amplifier was fabricated, pumped with diode light at 885 nm, and characterized. Experimental results show that the amplifier provides sufficient small-signal gain and sufficiently low wavefront and birefringence impairments to prove useful in laser systems, at repetition rates up to 60 Hz.

  19. Notes on Laser Acceleration

    International Nuclear Information System (INIS)

    Tajima, T.

    2008-01-01

    This note intends to motivate our effort toward the advent of new methods of particle acceleration, utilizing the fast rising laser technology. By illustrating the underlying principles in an intuitive manner and thus less jargon-clad fashion, we seek a direction in which we shall be able to properly control and harness the promise of laser acceleration. First we review the idea behind the laser wakefield. We then go on to examine ion acceleration by laser. We examine the sheath acceleration in particular and look for the future direction that allows orderly acceleration of ions in high energies

  20. X-ray lasers

    CERN Document Server

    Elton, Raymond C

    2012-01-01

    The first in its field, this book is both an introduction to x-ray lasers and a how-to guide for specialists. It provides new entrants and others interested in the field with a comprehensive overview and describes useful examples of analysis and experiments as background and guidance for researchers undertaking new laser designs. In one succinct volume, X-Ray Lasers collects the knowledge and experience gained in two decades of x-ray laser development and conveys the exciting challenges and possibilities still to come._Add on for longer version of blurb_M>The reader is first introduced

  1. Lasers in materials processing

    International Nuclear Information System (INIS)

    Davis, J.I.; Rockower, E.B.

    1981-01-01

    A status report on the uranium Laser Isotope Separation (LIS) Program at the Lawrence Livermore National Laboratory is presented. Prior to this status report, process economic analysis is presented so as to understand how the unique properties of laser photons can be best utilized in the production of materials and components despite the high cost of laser energy. The characteristics of potential applications that are necessary for success are identified, and those factors that have up to now frustrated attempts to find commercially viable laser induced chemical and physical process for the production of new or existing materials are pointed out

  2. Mid-Infrared Lasers

    Data.gov (United States)

    National Aeronautics and Space Administration — Mid infrared solid state lasers for Differential Absorption Lidar (DIAL) systems required for understanding atmospheric chemistry are not available. This program...

  3. Laser fusion program overview

    International Nuclear Information System (INIS)

    Emmett, J.L.

    1977-01-01

    This program is structured to proceed through a series of well defined fusion milestones to proof of the scientific feasibility, of laser fusion with the Shiva Nova system. Concurrently, those key technical areas, such as advanced lasers, which are required to progress beyond proof of feasibility, are being studied. We have identified and quantified the opportunities and key technical issues in military applications, such as weapons effects simulations, and in civilian applications, such as central-station electric power production. We summarize the current status and future plans for the laser fusion program at LLL, emphasizing the civilian applications of laser fusion

  4. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  5. Principles of laser dynamics

    CERN Document Server

    Khanin, YI

    1995-01-01

    This monograph summarizes major achievements in laser dynamics over the past three decades. The book begins with two introductory Chapters. Chapter 1 offers general considerations on quantum oscillators, formulates the requirements for the laser key elements and shows how these requirements are met in different laser systems. The second Chapter proposes the mathematical models used in semiclassical laser theory, discusses the approximations and simplifications in particular cases, and specifies the range of applicability of these models. In Chapters 3-5 attention is given primarily to the stea

  6. Laser transmitter system

    International Nuclear Information System (INIS)

    Dye, R.A.

    1975-01-01

    A laser transmitter system is disclosed which utilizes mechanical energy for generating an output pulse. The laser system includes a current developing device such as a piezoelectric crystal which charges a storage device such as a capacitor in response to a mechanical input signal. The capacitor is coupled to a switching device, such as a silicon controlled rectifier (SCR). The switching device is coupled to a laser transmitter such as a GaAs laser diode, which provides an output signal in response to the capacitor being discharged

  7. Laser in urology

    International Nuclear Information System (INIS)

    Breisland, H.O.

    1991-01-01

    The neodymium YAG laser is particularly suited for endoscopic urologic surgery because the YAG laser light can be conducted in flexible fibers. Superficial bladder tumours can be treated under local anaesthesia in the outpatient department. The frequency of local recurrences is low, significantly lower than after electrosection or electrocoagulation. Selected cases of T2-muscle invasive bladder tumours can be cured with laser coagulation applied subsequently to transurethral resection. Combined treatment with electrosection and laser coagulation of localized prostatic cancer is a promising method which compares favourably with results obtained by other treatment modalities. Tumours in the upper urinary tract can be laser-treated through ureteroscopes or nephroscopes, but the treatment should be limited to low stage, low grade tumours. Laser is the treatment of choice for intraurethral condylomatas. Laser treatment of penil carcinoma gives excellent cosmetic and functional results and few local recurrences. Laser lithotripsy is a new technique for treatment of ureteric stones and photodynamic laser therapy is a promising tecnique for treatment of carcinoma in situ in the bladder empithelium. However, neither of these techniques are available for clinical use in Norway as yet. 17 refs., 3 figs., 1 tabs

  8. Tunable Microfluidic Dye Laser

    DEFF Research Database (Denmark)

    Olsen, Brian Bilenberg; Helbo, Bjarne; Kutter, Jörg Peter

    2003-01-01

    We present a tunable microfluidic dye laser fabricated in SU-8. The tunability is enabled by integrating a microfluidic diffusion mixer with an existing microfluidic dye laser design by Helbo et al. By controlling the relative flows in the mixer between a dye solution and a solvent......, the concentration of dye in the laser cavity can be adjusted, allowing the wavelength to be tuned. Wavelength tuning controlled by the dye concentration was demonstrated with macroscopic dye lasers already in 1971, but this principle only becomes practically applicable by the use of microfluidic mixing...

  9. Trends in laser micromachining

    Science.gov (United States)

    Gaebler, Frank; van Nunen, Joris; Held, Andrew

    2016-03-01

    Laser Micromachining is well established in industry. Depending on the application lasers with pulse length from μseconds to femtoseconds and wavelengths from 1064nm and its harmonics up to 5μm or 10.6μm are used. Ultrafast laser machining using pulses with pico or femtosecond duration pulses is gaining traction, as it offers very precise processing of materials with low thermal impact. Large-scale industrial ultrafast laser applications show that the market can be divided into various sub segments. One set of applications demand low power around 10W, compact footprint and are extremely sensitive to the laser price whilst still demanding 10ps or shorter laser pulses. A second set of applications are very power hungry and only become economically feasible for large scale deployments at power levels in the 100+W class. There is also a growing demand for applications requiring fs-laser pulses. In our presentation we would like to describe these sub segments by using selected applications from the automotive and electronics industry e.g. drilling of gas/diesel injection nozzles, dicing of LED substrates. We close the presentation with an outlook to micromachining applications e.g. glass cutting and foil processing with unique new CO lasers emitting 5μm laser wavelength.

  10. Scanning Color Laser Microscope

    Science.gov (United States)

    Awamura, D.; Ode, T.; Yonezawa, M.

    1988-01-01

    A confocal color laser microscope which utilizes a three color laser light source (Red: He-Ne, Green: Ar, Blue: Ar) has been developed and is finding useful applications in the semiconductor field. The color laser microscope, when compared to a conventional microscope, offers superior color separation, higher resolution, and sharper contrast. Recently some new functions including a Focus Scan Memory, a Surface Profile Measurement System, a Critical Dimension Measurement system (CD) and an Optical Beam Induced Current Function (OBIC) have been developed for the color laser microscope. This paper will discuss these new features.

  11. High Power Vanadate lasers

    CSIR Research Space (South Africa)

    Strauss

    2006-07-01

    Full Text Available stream_source_info Strauss1_2006.pdf.txt stream_content_type text/plain stream_size 3151 Content-Encoding UTF-8 stream_name Strauss1_2006.pdf.txt Content-Type text/plain; charset=UTF-8 Laser Research Institute... University of Stellenbosch www.laser-research.co.za High Power Vanadate lasers H.J.Strauss, Dr. C. Bollig, R.C. Botha, Prof. H.M. von Bergmann, Dr. J.P. Burger Aims 1) To develop new techniques to mount laser crystals, 2) compare the lasing properties...

  12. Laser adaptive holographic hydrophone

    Energy Technology Data Exchange (ETDEWEB)

    Romashko, R V; Kulchin, Yu N; Bezruk, M N; Ermolaev, S A [Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok (Russian Federation)

    2016-03-31

    A new type of a laser hydrophone based on dynamic holograms, formed in a photorefractive crystal, is proposed and studied. It is shown that the use of dynamic holograms makes it unnecessary to use complex optical schemes and systems for electronic stabilisation of the interferometer operating point. This essentially simplifies the scheme of the laser hydrophone preserving its high sensitivity, which offers the possibility to use it under a strong variation of the environment parameters. The laser adaptive holographic hydrophone implemented at present possesses the sensitivity at a level of 3.3 mV Pa{sup -1} in the frequency range from 1 to 30 kHz. (laser hydrophones)

  13. Introduction to laser technology

    CERN Document Server

    Hitz, C Breck; Hecht, Jeff

    2012-01-01

    The only introductory text on the market today that explains the underlying physics and engineering applicable to all lasersAlthough lasers are becoming increasingly important in our high-tech environment, many of the technicians and engineers who install, operate, and maintain them have had little, if any, formal training in the field of electro-optics. This can result in less efficient usage of these important tools. Introduction to Laser Technology, Fourth Edition provides readers with a good understanding of what a laser is and what it can and cannot do. The book explains what types of las.

  14. Laser-induced interactions

    International Nuclear Information System (INIS)

    Green, W.R.

    1979-01-01

    This dissertation discusses some of the new ways that lasers can be used to control the energy flow in a medium. Experimental and theoretical considerations of the laser-induced collision are discussed. The laser-induced collision is a process in which a laser is used to selectively transfer energy from a state in one atomic or molecular species to another state in a different species. The first experimental demonstration of this process is described, along with later experiments in which lasers were used to create collisional cross sections as large as 10 - 13 cm 2 . Laser-induced collisions utilizing both a dipole-dipole interaction and dipole-quadrupole interaction have been experimentally demonstrated. The theoretical aspects of other related processes such as laser-induced spin-exchange, collision induced Raman emission, and laser-induced charge transfer are discussed. Experimental systems that could be used to demonstrate these various processes are presented. An experiment which produced an inversion of the resonance line of an ion by optical pumping of the neutral atom is described. This type of scheme has been proposed as a possible method for constructing VUV and x-ray lasers

  15. Jet laser ion source

    International Nuclear Information System (INIS)

    Dem'yanov, A.V.; Sidorov, S.V.

    1994-01-01

    External laser injector of multicharged ions (MCI) is developed in which wide-aperture aberration-free wire gauze spherical shape electrodes are applied for effective MCI extraction from laser plasma and beam focusing. Axial plasma compression by solenoid magnetic field is used to reduce ion losses due to transverse movement of the scattering laser plasma. Transverse magnetic field created by another solenoid facilitates the effective laser plasma braking and consequently, leads to the narrowing of energy spectrum of plasma ions and its shift towards lower energies. 2 refs.; 3 figs

  16. Free electron laser

    International Nuclear Information System (INIS)

    Ortega, J.M.; Billardon, M.

    1986-01-01

    Operation principle of a laser and an oscillator are recalled together with the klystron one. In the free electron laser, electrons go through an undulator or an optical klystron. Principles of the last one are given. The two distinct ways of producing coherent radiation with an undulator and an optical klystron are presented. The first one is the use of the free electron laser, the second is to make use of the spontaneous emission generation (harmonics generation). The different current types of free electron lasers are presented (Stanford, Los Alamos, Aco at Orsay). Prospects and applications are given in conclusion [fr

  17. Laser cooling of solids

    CERN Document Server

    Petrushkin, S V

    2009-01-01

    Laser cooling is an important emerging technology in such areas as the cooling of semiconductors. The book examines and suggests solutions for a range of problems in the development of miniature solid-state laser refrigerators, self-cooling solid-state lasers and optical echo-processors. It begins by looking at the basic theory of laser cooling before considering such topics as self-cooling of active elements of solid-state lasers, laser cooling of solid-state information media of optical echo-processors, and problems of cooling solid-state quantum processors. Laser Cooling of Solids is an important contribution to the development of compact laser-powered cryogenic refrigerators, both for the academic community and those in the microelectronics and other industries. Provides a timely review of this promising field of research and discusses the fundamentals and theory of laser cooling Particular attention is given to the physics of cooling processes and the mathematical description of these processes Reviews p...

  18. Laser beam diagnostics for kilowatt power pulsed YAG laser

    International Nuclear Information System (INIS)

    Liu, Yi; Leong, Keng H.

    1992-01-01

    There is a growing need for high power YAG laser beam diagnostics with the recent introduction of such lasers in laser material processing. In this paper, we will describe the use of a commercially available laser beam analyzer (Prometec) to profile the laser beam from a 1600 W pulsed Nd:YAG laser that has a 1 mm fiber optic beam delivery system. The selection of laser pulse frequency and pulse width for the measurement is discussed. Laser beam propagation parameters by various optical components such as fibers and lenses can be determined from measurements using this device. The importance of such measurements will be discussed

  19. Laser Program annual report 1987

    Energy Technology Data Exchange (ETDEWEB)

    O' Neal, E.M.; Murphy, P.W.; Canada, J.A.; Kirvel, R.D.; Peck, T.; Price, M.E.; Prono, J.K.; Reid, S.G.; Wallerstein, L.; Wright, T.W. (eds.)

    1989-07-01

    This report discusses the following topics: target design and experiments; target materials development; laboratory x-ray lasers; laser science and technology; high-average-power solid state lasers; and ICF applications studies.

  20. Laser Program annual report 1987

    International Nuclear Information System (INIS)

    O'Neal, E.M.; Murphy, P.W.; Canada, J.A.; Kirvel, R.D.; Peck, T.; Price, M.E.; Prono, J.K.; Reid, S.G.; Wallerstein, L.; Wright, T.W.

    1989-07-01

    This report discusses the following topics: target design and experiments; target materials development; laboratory x-ray lasers; laser science and technology; high-average-power solid state lasers; and ICF applications studies

  1. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  2. LASERS: A cryogenic slab CO laser

    Science.gov (United States)

    Ionin, Andrei A.; Kozlov, A. Yu; Seleznev, L. V.; Sinitsyn, D. V.

    2009-03-01

    A compact capacitive transverse RF-discharge-pumped slab CO laser with cryogenically cooled electrodes, which operates both in the cw and repetitively pulsed regimes, is fabricated. The laser operation is studied in the free running multifrequency regime at the vibrational - rotational transitions of the fundamental (V + 1 → V) vibrational bands of the CO molecule in the spectral region from 5.1 to 5.4 μm. Optimal operation conditions (gas mixture composition and pressure, RF pump parameters) are determined. It is shown that only gas mixtures with a high content of oxygen (up to 20% with respect to the concentration of CO molecules) can be used as an active medium of this laser. It is demonstrated that repetitively pulsed pumping is more efficient compared to cw pumping. In this case, quasi-cw lasing regime can be obtained. The maximum average output power of ~12 W was obtained for this laser operating on fundamental bands and its efficiency achieved ~14 %. The frequency-selective operation regime of the slab RF-discharge-pumped CO laser was realised at ~ 100 laser lines in the spectral region from 5.0 to 6.5 μm with the average output power of up to several tens of milliwatts in each line. Lasing at the transitions of the first vibrational overtone (V + 2 → V) of the CO molecule is obtained in the spectral region from 2.5 to 3.9 μm. The average output power of the overtone laser achieved 0.3 W. All the results were obtained without the forced gas mixture exchange in the discharge chamber. Under fixed experimental conditions, repetitively pulsed lasing (with fluctuations of the output characteristics no more than ±10 %) was stable for more than an hour.

  3. Pulsed laser deposition of SmFeAsO1-δ on MgO(100) substrates

    Science.gov (United States)

    Haindl, Silvia; Kinjo, Hiroyuki; Hanzawa, Kota; Hiramatsu, Hidenori; Hosono, Hideo

    2018-04-01

    Layered iron oxyarsenides are novel interesting semimetallic compounds that are itinerant antiferromagnets in their ground state with a transition to high-temperature superconductivity upon charge carrier doping. The rare earth containing mother compounds offer rich physics due to different antiferromagnetic orderings: the alignment of Fe magnetic moments within the FeAs sublattice, which is believed to play a role for the superconducting pairing mechanism, and the ordering of the rare-earth magnetic moments at low temperatures. Here, we present thin film preparation and a film growth study of SmFeAsO on MgO(100) substrates using pulsed laser deposition (PLD). In general, the PLD method is capable to produce iron oxyarsenide thin films, however, competition with impurity phase formation narrows the parameter window. We assume that the film growth in an ultra-high vacuum (UHV) environment results in an oxygen-deficient phase, SmFeAsO1-δ. Despite the large lattice misfit, we find epitaxial oxyarsenide thin film growth on MgO(100) with evolving film thickness. Bragg reflections are absent in very thin films although they locally show indications for pseudomorphic growth of the first unit cells. We propose the possibility for a Stranski-Krastanov growth mode as a result of the large in-plane lattice misfit between the iron oxypnictide and the MgO unit cells. A columnar 3-dimensional film growth mode dominates and the surface roughness is determined by growth mounds, a non-negligible parameter for device fabrication as well as in the application of surface sensitive probes. Furthermore, we found evidence for a stratified growth in steps of half a unit cell, i.e. alternating growth of (FeAs)- and (SmO1-δ)+ layers, the basic structural components of the unit cell. We propose a simple model for the growth kinetics of this compound.

  4. Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

    Energy Technology Data Exchange (ETDEWEB)

    Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T., E-mail: tobias.heindel@tu-berlin.de; Reitzenstein, S. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623 (Germany); Gaafar, M.; Vaupel, M.; Stolz, W.; Rahimi-Iman, A.; Koch, M. [Department of Physics and Materials Science Center, Philipps-Universität Marburg, 35032 Marburg (Germany)

    2015-07-27

    We report on the realization of a quantum dot (QD) based single-photon source with a record-high single-photon emission rate. The quantum light source consists of an InGaAs QD which is deterministically integrated within a monolithic microlens with a distributed Bragg reflector as back-side mirror, which is triggered using the frequency-doubled emission of a mode-locked vertical-external-cavity surface-emitting laser (ML-VECSEL). The utilized compact and stable laser system allows us to excite the single-QD microlens at a wavelength of 508 nm with a pulse repetition rate close to 500 MHz at a pulse width of 4.2 ps. Probing the photon statistics of the emission from a single QD state at saturation, we demonstrate single-photon emission of the QD-microlens chip with g{sup (2)}(0) < 0.03 at a record-high single-photon flux of (143 ± 16) MHz collected by the first lens of the detection system. Our approach is fully compatible with resonant excitation schemes using wavelength tunable ML-VECSELs, which will optimize the quantum optical properties of the single-photon emission in terms of photon indistinguishability.

  5. Power balancing of multibeam laser fusion lasers

    International Nuclear Information System (INIS)

    Seka, W.; Morse, S.; Letzring, S.; Kremens, R.; Kessler, T.J.; Jaanimagi, P.; Keck, R.; Verdon, C.; Brown, D.

    1989-01-01

    The success of laser fusion depends to a good degree on the ability to compress the target to very high densities of ≥1000 times liquid DT. To achieve such compressions require that the irradiation nonuniformity must not exceed ∼1% rms over the whole time of the compression, particularly during the early phases of irradiation. The stringent requirements for the irradiation uniformity for laser fusion have been known for quite some time but until recently the energy balance was mistakenly equated to power balance. The authors describe their effort on energy balance and irradiation patterns on the target. They significantly improved the laser performance with respect to overall intensity distributions on target including the implementation of distributed (random) phase plates in each high power beam. However, the slightly varying performance of the third harmonic conversion crystals in the twenty-four beams of their laser system was generally compensated for by appropriately adjusted 1.054μm input laser energy. Computational analysis of the results of the recent high density campaign are shown

  6. Laser Stabilization with Laser Cooled Strontium

    DEFF Research Database (Denmark)

    Christensen, Bjarke Takashi Røjle

    The frequency stability of current state-of-the-art stabilized clock lasers are limited by thermal fluctuations of the ultra-stable optical reference cavities used for their frequency stabilization. In this work, we study the possibilities for surpassing this thermal limit by exploiting the nonli......The frequency stability of current state-of-the-art stabilized clock lasers are limited by thermal fluctuations of the ultra-stable optical reference cavities used for their frequency stabilization. In this work, we study the possibilities for surpassing this thermal limit by exploiting...... the nonlinear effects from coupling of an optical cavity to laser cooled atoms having a narrow transition linewidth. Here, we have realized such a system where a thermal sample of laser cooled strontium-88 atoms are coupled to an optical cavity. The strontium-88 atoms were probed on the narrow 1S0-3P1 inter......-combination line at 689 nm in a strongly saturated regime. The dynamics of the atomic induced phase shift and absorption of the probe light were experimentally studied in details with the purpose of applications to laser stabilization. The atomic sample temperature was in the mK range which brought this system out...

  7. High-power pulsed lasers

    International Nuclear Information System (INIS)

    Holzrichter, J.F.

    1980-01-01

    The ideas that led to the successful construction and operation of large multibeam fusion lasers at the Lawrence Livermore Laboratory are reviewed. These lasers are based on the use of Nd:glass laser materials. However, most of the concepts are applicable to any laser being designed for fusion experimentation. This report is a summary of lectures given by the author at the 20th Scottish University Summer School in Physics, on Laser Plasma Interaction. This report includes basic concepts of the laser plasma system, a discussion of lasers that are useful for short-pulse, high-power operation, laser design constraints, optical diagnostics, and system organization

  8. Laser safety tools and training

    CERN Document Server

    Barat, Ken

    2008-01-01

    Lasers perform many unique functions in a plethora of applications, but there are many inherent risks with this continually burgeoning technology. Laser Safety: Tools and Training presents simple, effective ways for users in a variety of facilities to evaluate the hazards of any laser procedure and ensure they are following documented laser safety standards.Designed for use as either a stand-alone volume or a supplement to Laser Safety Management, this text includes fundamental laser and laser safety information and critical laser use information rarely found in a single source. The first lase

  9. Laser biostimulation in pediatrics

    Science.gov (United States)

    Utz, Irina A.; Lagutina, L. E.; Tuchin, Valery V.

    1995-01-01

    In the present paper the method and apparatus for percutaneous laser irradiation of blood (PLIB) in vessels (veins) are described. Results of clinical investigations of biostimulating effects under PLIB by red laser light (633 nm) in Cubiti and Saphena Magna veins are presented.

  10. Metallic DFB lasers

    NARCIS (Netherlands)

    Marell, M.J.H.; Nötzel, R.; Smit, M.K.; Hill, M.T.; Pozo, J.; Mortensen, M.; Urbach, P.; Leijtens, X.; Yousefi, M.

    2010-01-01

    In this paper we present our latest results on the design, fabrication and characterization of metal coated DFB lasers. These devices are based on a specialform of the metal-insulator-metal waveguides, which support plasmon gap modes. The distributed feedback provides control over the laser ~

  11. Laser processing of materials

    Indian Academy of Sciences (India)

    M. Senthilkumar (Newgen Imaging) 1461 1996 Oct 15 13:05:22

    The initial foundation of laser theory was laid by Einstein [11]. ..... general definition and scope of the processes as understood in conventional practice, but is ..... [54]. Laser welding of Ti-alloys. Welding. 2001 TiNi shape memory alloys. CW–CO2. Study corrosion, mechanical and shape memory properties of weldments.

  12. Microfluidic Dye Lasers

    DEFF Research Database (Denmark)

    Kristensen, Anders; Balslev, Søren; Gersborg-Hansen, Morten

    2006-01-01

    A technology for miniaturized, polymer based lasers, suitable for integration with planar waveguides and microfluidic networks is presented. The microfluidic dye laser device consists of a microfluidic channel with an embedded optical resonator. The devices are fabricated in a thin polymer film...

  13. Laser trabeculotomy versus trabeculoplasty

    International Nuclear Information System (INIS)

    Ticho, U.; Frucht, J.

    1984-01-01

    Although laser trabeculotomy has failed in glaucoma management, the laser trabeculoplasty (LTP) procedure has proved to be helpful. LTP was found to improve glaucoma control in 80-90% of open angle glaucoma patients, and less in secondary glaucoma and low tension glaucoma (50%). The procedure is more successful in dark iris eyes and complications are transient. (Auth.)

  14. 5. Laser plasma interaction

    International Nuclear Information System (INIS)

    Labaune, C.; Fuchs, J.; Bandulet, H.

    2002-01-01

    Imprint elimination, smoothing and preheat control are considerable problems in inertial fusion and their possible solution can be achieved by using low-density porous materials as a buffer in target design. The articles gathered in this document present various aspects of the laser-plasma interaction, among which we have noticed: -) numerical algorithmic improvements of the Vlasov solver toward the simulation of the laser-plasma interaction are proposed, -) the dependence of radiation temperatures and X-ray conversion efficiencies of hohlraum on the target structures and laser irradiation conditions are investigated, -) a study of laser interaction with ultra low-density (0,5 - 20 mg/cm 3 ) porous media analyzing backscattered light at incident laser frequency ω 0 and its harmonics 3*ω 0 /2 and 2*ω 0 is presented, -) investigations of laser interaction with solid targets and crater formation are carried out with the objective to determine the ablation loading efficiency, -) a self organization in an intense laser-driven plasma and the measure of the relative degree of order of the states in an open system based on the S-theorem are investigated, and -) the existence and stability of electromagnetic solitons generated in a relativistic interaction of an intense laser light with uniform under-dense cold plasma are studied

  15. Laser Interference Lithography

    NARCIS (Netherlands)

    van Wolferen, Hendricus A.G.M.; Abelmann, Leon; Hennessy, Theodore C.

    In this chapter we explain how submicron gratings can be prepared by Laser Interference Lithography (LIL). In this maskless lithography technique, the standing wave pattern that exists at the intersection of two coherent laser beams is used to expose a photosensitive layer. We show how to build the

  16. Levitated droplet dye laser

    DEFF Research Database (Denmark)

    Azzouz, H.; Alkafadiji, L.; Balslev, Søren

    2006-01-01

    a high quality optical resonator. Our 750 nL lasing droplets consist of Rhodamine 6G dissolved in ethylene glycol, at a concentration of 0.02 M. The droplets are optically pumped at 532 nm light from a pulsed, frequency doubled Nd:YAG laser, and the dye laser emission is analyzed by a fixed grating...

  17. Laser induced energy transfer

    International Nuclear Information System (INIS)

    Falcone, R.W.

    1979-01-01

    Two related methods of rapidly transferring stored energy from one excited chemical species to another are described. The first of these, called a laser induced collision, involves a reaction in which the energy balance is met by photons from an intense laser beam. A collision cross section of ca 10 - 17 cm 2 was induced in an experiment which demonstrated the predicted dependence of the cross section on wavelength and power density of the applied laser. A second type of laser induced energy transfer involves the inelastic scattering of laser radiation from energetically excited atoms, and subsequent absorption of the scattered light by a second species. The technique of producing the light, ''anti-Stokes Raman'' scattering of visible and infrared wavelength laser photons, is shown to be an efficient source of narrow bandwidth, high brightness, tunable radiation at vacuum ultraviolet wavelengths by using it to excite a rare gas transition at 583.7 A. In addition, this light source was used to make the first measurement of the isotopic shift of the helium metastable level at 601 A. Applications in laser controlled chemistry and spectroscopy, and proposals for new types of lasers using these two energy transfer methods are discussed

  18. Coaxial short pulsed laser

    Science.gov (United States)

    Nelson, M.A.; Davies, T.J.

    1975-08-01

    This invention relates to a laser system of rugged design suitable for use in a field environment. The laser itself is of coaxial design with a solid potting material filling the space between components. A reservoir is employed to provide a gas lasing medium between an electrode pair, each of which is connected to one of the coaxial conductors. (auth)

  19. LASER EN LARYNGOLOGIE

    African Journals Online (AJOL)

    9 mai 2013 ... permettant selon les besoins, coagulation, section ou vaporisation. ... tés par laser au service d'ORL et de chirurgie cervico-. LASER EN .... nose était de siège glottique pur à type de palmure dans. 3 cas et supra glottique ...

  20. Lasers in nuclear physics

    International Nuclear Information System (INIS)

    Inamura, T.T.

    1988-01-01

    The hyperfine interaction has been reviewed from a point of view of nuclear physics. Recent progress of nuclear spectroscopy with lasers is presented as one of laser studies of fundamental physics currently pursued in Japan. Especially, the hyperfine anomaly is discussed in connection with the origin of nuclear magnetism. (author)

  1. for aqueous dye lasers

    Indian Academy of Sciences (India)

    2014-02-12

    Feb 12, 2014 ... inclusion complex of RhB with the container molecule cucurbit[7]uril (CB[7]). Keywords. Temperature-dependent fluorescence; Rhodamine B; cucurbit[7]uril; host–guest complex; dye laser. PACS Nos 36.20.kd; 83.60.pq; 87.64.kv. 1. Introduction. Rhodamine B (RhB) is an efficient and photostable laser dye ...

  2. Electrodeless excimer laser

    International Nuclear Information System (INIS)

    Lisi, N.

    2001-01-01

    In this paper it is proposed how to build an excimer laser based on an electrodeless discharge (or Dielectric Barrier Discharge). Such laser could operate with a low energy per pulse ( 2 excimer molecule, whose emission wavelength in the VUV range (157 nm) at high reprate is particularly interesting in the micro-lithography field [it

  3. Auricular Acupuncture with Laser

    Science.gov (United States)

    Bahr, Frank

    2013-01-01

    Auricular acupuncture is a method which has been successfully used in various fields of medicine especially in the treatment of pain relief. The introduction of lasers especially low-level lasers into medicine brought besides the already existing stimulation with needles and electricity an additional technique to auricular acupuncture. This literature research looks at the historical background, the development and the anatomical and neurological aspects of auricular acupuncture in general and auricular laser acupuncture in detail. Preliminary scientific findings on auricular acupuncture with laser have been described in detail and discussed critically in this review article. The results of the studies have shown evidence of the effect of auricular laser acupuncture. However, a comparison of these studies was impossible due to their different study designs. The most important technical as well as study parameters were described in detail in order to give more sufficient evidence and to improve the quality of future studies. PMID:23935695

  4. Powering laser diode systems

    CERN Document Server

    Trestman, Grigoriy A

    2017-01-01

    This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

  5. Laser Beam Focus Analyser

    DEFF Research Database (Denmark)

    Nielsen, Peter Carøe; Hansen, Hans Nørgaard; Olsen, Flemming Ove

    2007-01-01

    the obtainable features in direct laser machining as well as heat affected zones in welding processes. This paper describes the development of a measuring unit capable of analysing beam shape and diameter of lasers to be used in manufacturing processes. The analyser is based on the principle of a rotating......The quantitative and qualitative description of laser beam characteristics is important for process implementation and optimisation. In particular, a need for quantitative characterisation of beam diameter was identified when using fibre lasers for micro manufacturing. Here the beam diameter limits...... mechanical wire being swept through the laser beam at varying Z-heights. The reflected signal is analysed and the resulting beam profile determined. The development comprised the design of a flexible fixture capable of providing both rotation and Z-axis movement, control software including data capture...

  6. Introducing the yellow laser

    Science.gov (United States)

    Lincoln, James

    2018-02-01

    The author has acquired a yellow laser with the specific wavelength of 589 nm. Because this is the first time such a laser has been discussed in this journal, I feel it is appropriate to provide a discussion of its function and capabilities. Normal laser safety should be employed, such as not pointing it into eyes or at people, and using eye protection for the young and inexperienced. It is important to note that 589 nm is the same wavelength as the Sodium-D line (doublet). This allows for the laser to serve as a replacement for sodium lamps, and, considering its rather high price, this added value should be balanced against its cost. What follows is a list of activities that showcase the yellow laser's unique promise as an engaging piece of technology that can be used in the teaching of physics.

  7. Regenerative similariton laser

    Directory of Open Access Journals (Sweden)

    Thibault North

    2016-05-01

    Full Text Available Self-pulsating lasers based on cascaded reshaping and reamplification (2R are capable of initiating ultrashort pulses despite the accumulation of large amounts of nonlinearities in all-fiber resonators. The spectral properties of pulses in self-similar propagation are compatible with cascaded 2R regeneration by offset filtering, making parabolic pulses suitable for the design of a laser of this recently introduced class. A new type of regenerative laser giving birth to similaritons is numerically investigated and shows that this laser is the analog of regenerative sources based solely on self-phase modulation and offset filtering. The regenerative similariton laser does not suffer from instabilities due to excessive nonlinearities and enables ultrashort pulse generation in a simple cavity configuration.

  8. Femtosecond Laser Filamentation

    CERN Document Server

    Chin, See Leang

    2010-01-01

    Femtosecond Laser Filamentation gives a comprehensive review of the physics of propagation of intense femtosecond laser pulses in optical media (principally air) and the applications and challenges of this new technique. This book presents the modern understanding of the physics of femtosecond laser pulse propagation, including unusual new effects such as the self-transformation of the pulse into a white light laser pulse, intensity clamping, the physics of multiple filamentation and competition, and how filaments’ ability to melt glass leads to wave guide writing. The potential applications of laser filamentation in atmospheric sensing and the generation of other electromagnetic pulses from the UV to the radio frequency are treated, together with possible future challenges in the excitation of super-excited states of molecules. Exciting new phenomena such as filament induced ultrafast birefringence and the excitation of molecular rotational wave packets and their multiple revivals in air (gases) will also ...

  9. NASA Space Laser Technology

    Science.gov (United States)

    Krainak, Michael A.

    2015-01-01

    Over the next two decades, the number of space based laser missions for mapping, spectroscopy, remote sensing and other scientific investigations will increase several fold. The demand for high wall-plug efficiency, low noise, narrow linewidth laser systems to meet different systems requirements that can reliably operate over the life of a mission will be high. The general trends will be for spatial quality very close to the diffraction limit, improved spectral performance, increased wall-plug efficiency and multi-beam processing. Improved spectral performance will include narrower spectral width (very near the transform limit), increased wavelength stability and or tuning (depending on application) and lasers reaching a wider range of wavelengths stretching into the mid-infrared and the near ultraviolet. We are actively developing high efficiency laser transmitter and high-sensitivity laser receiver systems that are suitable for spaceborne applications.

  10. Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

    Energy Technology Data Exchange (ETDEWEB)

    Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

    2000-04-01

    Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

  11. Laser Safety Inspection Criteria

    International Nuclear Information System (INIS)

    Barat, K.

    2005-01-01

    A responsibility of the Laser Safety Officer (LSO) is to perform laser audits. The American National Standard Z136.1 Safe Use of Lasers references this requirement through several sections. One such reference is Section 1.3.2.8, Safety Features Audits, ''The LSO shall ensure that the safety features of the laser installation facilities and laser equipment are audited periodically to assure proper operation''. The composition, frequency and rigor of that inspection/audit rests in the hands of the LSO. A common practice for institutions is to develop laser audit checklists or survey forms It is common for audit findings from one inspector or inspection to the next to vary even when reviewing the same material. How often has one heard a comment, ''well this area has been inspected several times over the years and no one ever said this or that was a problem before''. A great number of audit items, and therefore findings, are subjective because they are based on the experience and interest of the auditor to particular items on the checklist. Beam block usage, to one set of eyes might be completely adequate, while to another, inadequate. In order to provide consistency, the Laser Safety Office of the National Ignition Facility Directorate has established criteria for a number of items found on the typical laser safety audit form. The criteria are distributed to laser users. It serves two broad purposes; first, it gives the user an expectation of what will be reviewed by an auditor. Second, it is an opportunity to explain audit items to the laser user and thus the reasons for some of these items, such as labelling of beam blocks

  12. Laser requirements for a laser fusion energy power plant

    Institute of Scientific and Technical Information of China (English)

    Stephen; E.Bodner; Andrew; J.Schmitt; John; D.Sethian

    2013-01-01

    We will review some of the requirements for a laser that would be used with a laser fusion energy power plant, including frequency, spatial beam smoothing, bandwidth, temporal pulse shaping, efficiency, repetition rate, and reliability. The lowest risk and optimum approach uses a krypton fluoride gas laser. A diode-pumped solid-state laser is a possible contender.

  13. Measurements of laser parameters for the Shiva laser fusion facility

    International Nuclear Information System (INIS)

    Ozarski, R.G.

    1979-01-01

    Large laser systems require numerous laser diagnostics to provide configuration, performance and maintenance data to permit efficient operation. The following diagnostics for a large laser system named Shiva are discussed: (1) description of Shiva laser system, (2) what measurements are desired and or required and why, (3) what measurement techniques and packages are employed and a brief description of the operating principles of the sensors employed, and (4) the laser diagnostic data acquisition and display system

  14. LASER PROCESSING ON SINGLE CRYSTALS BY UV PULSE LASER

    OpenAIRE

    龍見, 雅美; 佐々木, 徹; 高山, 恭宜

    2009-01-01

    Laser processing by using UV pulsed laser was carried out on single crystal such as sapphire and diamond in order to understand the fundamental laser processing on single crystal. The absorption edges of diamond and sapphire are longer and shorter than the wave length of UV laser, respectively. The processed regions by laser with near threshold power of processing show quite different state in each crystal.

  15. Laser diode technology and applications

    International Nuclear Information System (INIS)

    Figueroa, L.

    1989-01-01

    This book covers a wide range of semiconductor laser technology, from new laser structures and laser design to applications in communications, remote sensing, and optoelectronics. The authors report on new laser diode physics and applications and present a survey of the state of the art as well as progress in new developments

  16. 1982 laser program annual report

    Energy Technology Data Exchange (ETDEWEB)

    Hendricks, C.D.; Grow, G.R. (eds.)

    1983-08-01

    This annual report covers the following eight sections: (1) laser program review, (2) laser systems and operation, (3) target design, (4) target fabrication, (5) fusion experiments program, (6) Zeus laser project, (7) laser research and development, and (8) energy applications. (MOW)

  17. Fractional laser skin resurfacing.

    Science.gov (United States)

    Alexiades-Armenakas, Macrene R; Dover, Jeffrey S; Arndt, Kenneth A

    2012-11-01

    Laser skin resurfacing (LSR) has evolved over the past 2 decades from traditional ablative to fractional nonablative and fractional ablative resurfacing. Traditional ablative LSR was highly effective in reducing rhytides, photoaging, and acne scarring but was associated with significant side effects and complications. In contrast, nonablative LSR was very safe but failed to deliver consistent clinical improvement. Fractional LSR has achieved the middle ground; it combined the efficacy of traditional LSR with the safety of nonablative modalities. The first fractional laser was a nonablative erbium-doped yttrium aluminum garnet (Er:YAG) laser that produced microscopic columns of thermal injury in the epidermis and upper dermis. Heralding an entirely new concept of laser energy delivery, it delivered the laser beam in microarrays. It resulted in microscopic columns of treated tissue and intervening areas of untreated skin, which yielded rapid reepithelialization. Fractional delivery was quickly applied to ablative wavelengths such as carbon dioxide, Er:YAG, and yttrium scandium gallium garnet (2,790 nm), providing more significant clinical outcomes. Adjustable laser parameters, including power, pitch, dwell time, and spot density, allowed for precise determination of percent surface area, affected penetration depth, and clinical recovery time and efficacy. Fractional LSR has been a significant advance to the laser field, striking the balance between safety and efficacy.

  18. The argon excimer laser

    International Nuclear Information System (INIS)

    Wrobel, W.G.

    1981-02-01

    The electron-beam-pumped argon eximer laser is investigated and tuned for the first time. The electron beam is generated by means of an improved coaxial field emmision diode in which argon gas is excited with power densities of 0.3 GW/cm 3 for 18 ns. The processes in the excited gas of 20 to 65 bar are described in the context of a kinetic model as a sequence of stationary states. Investigations of the amplified spontaneous emission (superfluorescence) confirm the predictions of this model. Only the absorption due to the excited Ar atoms is anomalously high. Reproducible operation of the argon eximer laser was achieved in a wide pressure range with various resonator arrangements. The wavelength of this shortest wavelength of this shortest wavelength excimer laser is 126 nm, the laser line width approx. 1.7 nm, the pulse length 7 to 13 ns, and the laser power 250 kW. The laser emission is tuned from 123.2 nm to 128.4 nm by two different methods (diffraction grating and prism). This tunable laser is thus the one with the shortest wavelength at present. Its line width is 0.25 to 0.4 nm, and the power ue 1.7 kW. (orig.)

  19. Laser wakefield acceleration

    International Nuclear Information System (INIS)

    Esarey, E.; Ting, A.; Sprangle, P.

    1989-01-01

    The laser wakefield accelerator (LWFA) is a novel plasma based electron acceleration scheme which utilizes a relativistic optical guiding mechanism for laser pulse propagation. In the LWFA, a short, high power, single frequency laser pulse is propagated through a plasma. As the laser pulse propagates, its radial and axial ponderomotive forces nonresonantly generate large amplitude plasma waves (wakefields) with a phase velocity equal to the group velocity of the pulse. A properly phased electron bunch may then be accelerated by the axial wakefield and focused by the transverse wakefield. Optical guiding of the laser pulse in the plasma is necessary in order to achieve high energies in a single stage of acceleration. At sufficiently high laser powers, optical guiding may be achieved through relativistic effects associated with the plasma electrons. Preliminary analysis indicates that this scheme may overcome some of the difficulties present in the plasma beat wave accelerator and in the plasma wakefield accelerator. Analytical and numerical calculations are presented which study both laser pulse propagation within a plasma as well as the subsequent generation of large amplitude plasma waves. In addition, the generation of large amplitude plasma waves in regimes where the plasma waves become highly nonlinear is examined

  20. Excimer laser decontamination

    Science.gov (United States)

    Sentis, Marc L.; Delaporte, Philippe C.; Marine, Wladimir; Uteza, Olivier P.

    2000-04-01

    The application of excimer laser ablation process to the decontamination of radioactive surfaces is discussed. This technology is very attractive because it allows to efficiently remove the contaminated particles without secondary waste production. To demonstrate the capability of such technology to efficiently decontaminate large area, we studied and developed a prototype which include a XeCl laser, an optical fiber delivery system and an ablated particles collection cell. The main physical processes taking place during UV laser ablation will be explained. The influence of laser wavelength, pulse duration and absorption coefficient of material will be discussed. Special studies have been performed to understand the processes which limit the transmission of high average power excimer laser through optical fiber, and to determine the laser conditions to optimize the value of this transmission. An in-situ spectroscopic analysis of laser ablation plasma allows the real time control of the decontamination. The results obtained for painting or metallic oxides removal from stainless steel surfaces will be presented.

  1. Color Laser Microscope

    Science.gov (United States)

    Awamura, D.; Ode, T.; Yonezawa, M.

    1987-04-01

    A color laser microscope utilizing a new color laser imaging system has been developed for the visual inspection of semiconductors. The light source, produced by three lasers (Red; He-Ne, Green; Ar, Blue; He-Cd), is deflected horizontally by an AOD (Acoustic Optical Deflector) and vertically by a vibration mirror. The laser beam is focused in a small spot which is scanned over the sample at high speed. The light reflected back from the sample is reformed to contain linear information by returning to the original vibration mirror. The linear light is guided to the CCD image sensor where it is converted into a video signal. Individual CCD image sensors are used for each of the three R, G, or B color image signals. The confocal optical system with its laser light source yields a color TV monitor image with no flaring and a much sharper resolution than that of the conventional optical microscope. The AOD makes possible a high speed laser scan and a NTSC or PAL TV video signal is produced in real time without any video memory. Since the light source is composed of R, G, and B laser beams, color separation superior to that of white light illumination is achieved. Because of the photometric linearity of the image detector, the R, G, and B outputs of the system are most suitably used for hue analysis. The CCD linear image sensors in the optical system produce no geometrical distortion, and good color registration is available principally. The output signal can be used for high accuracy line width measuring. The many features of the color laser microscope make it ideally suited for the visual inspection of semiconductor processing. A number of these systems have already been installed in such a capacity. The Color Laser Microscope can also be a very useful tool for the fields of material engineering and biotechnology.

  2. Dye laser principles with applications

    CERN Document Server

    Duarte, Frank J; Liao, Peter F; Kelley, Paul

    1990-01-01

    A tutorial introduction to the field of dye lasers, Dye Laser Principles also serves as an up-to-date overview for those using dye lasers as research and industrial tools. A number of the issues discussed in this book are pertinent not only to dye lasers but also to lasers in general. Most of the chapters in the book contain problem sets that expand on the material covered in the chapter.Key Features* Dye lasers are among the most versatile and successful laser sources currently available in use Offering both pulsed and continuous-wave operation and tunable from the near ultraviole

  3. Temperature stabilization of injection lasers

    International Nuclear Information System (INIS)

    Albanese, A.

    1987-01-01

    Apparatus which stabilizes the temperature, and thereby the output wavelength, of an injection laser. Means monitor the laser terminal voltage across a laser and derive a voltage therefrom which is proportional to the junction voltage of the laser. Means compares the voltage to a reference value from source and a temperature controller adjusts the laser temperature in response to the results of the comparison. Further embodiments of the present invention vary the output wavelength of the laser by varying the reference value from source against which the laser junction voltage is compared. (author)

  4. Latest development of laser cutting

    OpenAIRE

    Wetzig, Andreas; Herwig, Patrick; Hauptmann, Jan; Goppold, Cindy; Baumann, Robert; Fürst, Andreas; Rose, Michael; Pinder, Thomas; Mahrle, Achim; Beyer, Eckhard

    2016-01-01

    Laser cutting was one of the first applications of laser material processing. Today, laser cutting is the most widespread application among laser material processing besides laser marking. Meanwhile, nearly each material can be cut by means of a laser, in particular since ultra short pulse lasers are available in the power range of up to 100 W. The to be cut material can come with thicknesses from a few microns till tens of millimeters as flat stock or as free form shapes. The paper will conc...

  5. Color speckle in laser displays

    Science.gov (United States)

    Kuroda, Kazuo

    2015-07-01

    At the beginning of this century, lighting technology has been shifted from discharge lamps, fluorescent lamps and electric bulbs to solid-state lighting. Current solid-state lighting is based on the light emitting diodes (LED) technology, but the laser lighting technology is developing rapidly, such as, laser cinema projectors, laser TVs, laser head-up displays, laser head mounted displays, and laser headlamps for motor vehicles. One of the main issues of laser displays is the reduction of speckle noise1). For the monochromatic laser light, speckle is random interference pattern on the image plane (retina for human observer). For laser displays, RGB (red-green-blue) lasers form speckle patterns independently, which results in random distribution of chromaticity, called color speckle2).

  6. Teradiode's high brightness semiconductor lasers

    Science.gov (United States)

    Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

    2016-03-01

    TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

  7. Organic solid-state lasers

    CERN Document Server

    Forget, Sébastien

    2013-01-01

    Organic lasers are broadly tunable coherent sources, potentially compact, convenient and manufactured at low-costs. Appeared in the mid 60’s as solid-state alternatives for liquid dye lasers, they recently gained a new dimension after the demonstration of organic semiconductor lasers in the 90's. More recently, new perspectives appeared at the nanoscale, with organic polariton and surface plasmon lasers. After a brief reminder to laser physics, a first chapter exposes what makes organic solid-state organic lasers specific. The laser architectures used in organic lasers are then reviewed, with a state-of-the-art review of the performances of devices with regard to output power, threshold, lifetime, beam quality etc. A survey of the recent trends in the field is given, highlighting the latest developments with a special focus on the challenges remaining for achieving direct electrical pumping of organic semiconductor lasers. A last chapter covers the applications of organic solid-state lasers.

  8. Laser Hazards Bibliography

    Science.gov (United States)

    1989-10-31

    light on mandibular fracture healing, Stomatologiia, 57(5): 5-9 (1978). 42 Laser Hazards Bibliography 177. Van Gemert, M.J.C., Schets, G.A.C.M., Bishop...U., Laser-coagulation of ruptured fixation suture after lens implantation, J Am Intraocul Implant Soc, 4(2): 54 (1978). 49. Federman, J. L., Ando, F...laser in pediatric surgery, J Ped Surg, 3: 263-270 (April 1968). 82. Hennessy, R. T., and Leibowitz, H., Subjective measurement of accommodation with

  9. Optimising laser tattoo removal

    Directory of Open Access Journals (Sweden)

    Kabir Sardana

    2015-01-01

    Full Text Available Lasers are the standard modality for tattoo removal. Though there are various factors that determine the results, we have divided them into three logical headings, laser dependant factors such as type of laser and beam modifications, tattoo dependent factors like size and depth, colour of pigment and lastly host dependent factors, which includes primarily the presence of a robust immune response. Modifications in the existing techniques may help in better clinical outcome with minimal risk of complications. This article provides an insight into some of these techniques along with a detailed account of the factors involved in tattoo removal.

  10. Ultrashort Laser Pulse Phenomena

    CERN Document Server

    Diels, Jean-Claude

    2006-01-01

    Ultrashort Laser Pulse Phenomena, 2e serves as an introduction to the phenomena of ultra short laser pulses and describes how this technology can be used to examine problems in areas such as electromagnetism, optics, and quantum mechanics. Ultrashort Laser Pulse Phenomena combines theoretical backgrounds and experimental techniques and will serve as a manual on designing and constructing femtosecond (""faster than electronics"") systems or experiments from scratch. Beyond the simple optical system, the various sources of ultrashort pulses are presented, again with emphasis on the basic

  11. Laser-driven accelerators

    International Nuclear Information System (INIS)

    Anon.

    1982-01-01

    Several devices for using laser fields have been proposed and they can be classified in three broad categories - 'far-field' accelerators (such as the principle of inverse free electron lasers), 'media' accelerators (which, for example, use the inverse Cherenkov effect or laser-controlled plasma waves), and 'near-field' accelerators (using a loaded guiding structure such as cavities or gratings). These different approaches come from the fact that a particle cannot be accelerated by the absorption of single photons (because of momentum conservation) and thus some other element has to intervene. (orig./HSI).

  12. Regenerative laser system

    International Nuclear Information System (INIS)

    Biancardi, F.R.; Landerman, A.; Melikian, G.

    1975-01-01

    Regenerative apparatus for exhausting the working medium from the optical cavity of a laser and for supplying preheated diluent to the reaction chamber of a laser is disclosed. In an aftercooler thermal energy is exchanged between the working medium exhausted from the optical cavity and a cryogenic coolant which is subsequently utilized as the motive fluid for an ejector and as a diluent in the production of laser gas. Highly toxic and corrosive gases are condensed out of the working medium as the cryogenic coolant is evaporated and superheated. A preheater transfers additional heat to the diluent before the diluent enters the reaction chamber. (U.S.)

  13. Tunable excimer lasers

    International Nuclear Information System (INIS)

    Sze, R.C.

    1990-01-01

    The wide bandwidth nature of the rare-gas halide excimer transitions allow reasonable tuning of the laser oscillation wavelength that makes it useful for a number of applications. At the same time this wide bandwidth makes narrow band operation difficult and special techniques are needed to insure narrow frequency lasing as well as absolute frequency resettability. The author discusses briefly some of the classical frequency narrowing techniques and then goes on to some recent work that require lasers of special frequency characteristics for special applications including KrF laser fusion

  14. Diatomic gasdynamic lasers.

    Science.gov (United States)

    Mckenzie, R. L.

    1972-01-01

    Predictions from a numerical model of the vibrational relaxation of anharmonic diatomic oscillators in supersonic expansions are used to show the extent to which the small anharmonicity of gases like CO can cause significant overpopulations of upper vibrational states. When mixtures of CO and N2 are considered, radiative gain on many of the vibration-rotation transitions of CO is predicted. Experiments are described that qualitatively verify the predictions by demonstrating laser oscillation in CO-N2 expansions. The resulting CO-N2 gasdynamic laser displays performance characteristics that equal or exceed those of similar CO2 lasers.

  15. Gas dynamic lasers

    International Nuclear Information System (INIS)

    Hill, R.J.; Jewell, N.T.

    1975-01-01

    In a high powered laser system it is proposed that combustion gases be bled off from a gas turbine engine and their composition adjusted by burning extra fuel in the bleed gases or adding extra substances. Suitable aerodynamic expansion produces a population inversion resulting in laser action in the CO 2 species. Alternatively, bleed gases may be taken from the high pressure compressor of the gas turbine engine and an appropriate fuel burned therein. If required, other adjustments may also be made to the composition and the resulting gaseous mixture subjected to aerodynamic expansion to induce laser action as before. (auth)

  16. Monoenergetic laser wakefield acceleration

    Directory of Open Access Journals (Sweden)

    N. E. Andreev

    2000-02-01

    Full Text Available Three dimensional test particle simulations are applied to optimization of the plasma-channeled laser wakefield accelerator (LWFA operating in a weakly nonlinear regime. Electron beam energy spread, emittance, and luminosity depend upon the proportion of the electron bunch size to the plasma wavelength. This proportion tends to improve with the laser wavelength increase. We simulate a prospective two-stage ∼1GeV LWFA with controlled energy spread and emittance. The input parameters correspond to realistic capabilities of the BNL Accelerator Test Facility that features a picosecond-terawatt CO_{2} laser and a high-brightness electron gun.

  17. Simulations of laser undulators

    Science.gov (United States)

    Milton, S. V.; Biedron, S. B.; Einstein, J. E.

    2016-09-01

    We perform a series of single-pass, one-D free-electron laser simulations based on an electron beam from a standard linear accelerator coupled with a so-called laser undulator, a specialized device that is more compact than a standard undulator based on magnetic materials. The longitudinal field profiles of such lasers undulators are intriguing as one must and can tailor the profile for the needs of creating the virtual undulator. We present and discuss several results of recent simulations and our future steps.

  18. Diatomic gasdynamic lasers

    International Nuclear Information System (INIS)

    McKenzie, R.L.

    1971-12-01

    Predictions from a numerical model of the vibrational relaxation of anharmonic diatomic oscillators in supersonic expansions are used to show the extent to which the small anharmonicity of gases like CO can cause significant over-populations of upper vibrational states. When mixtures of CO and N 2 are considered, radiative gain on many of the vibration-rotation transitions of CO is predicted. Experiments are described that qualitatively verify the predictions by demonstrating laser oscillation in CO-N 2 expansions. The resulting CO-N 2 gasdynamic laser displays performance characteristics that equal or exceed those of similar CO 2 lasers

  19. High power excimer laser

    International Nuclear Information System (INIS)

    Oesterlin, P.; Muckenheim, W.; Basting, D.

    1988-01-01

    Excimer lasers emitting more than 200 W output power are not commercially available. A significant increase requires new technological efforts with respect to both the gas circulation and the discharge system. The authors report how a research project has yielded a laser which emits 0.5 kW at 308 nm when being UV preionized and operated at a repetition rate of 300 Hz. The laser, which is capable of operating at 500 Hz, can be equipped with an x-ray preionization module. After completing this project 1 kW output power will be available

  20. Plasmonic colour laser printing

    DEFF Research Database (Denmark)

    Zhu, Xiaolong; Vannahme, Christoph; Højlund-Nielsen, Emil

    2016-01-01

    -beam lithography (EBL) or focused ion beam (FIB), both expensive and not scalable processes that are not suitable for post-processing customization. Here we show a method of colour printing on nanoimprinted plasmonic metasurfaces using laser post-writing. Laser pulses induce transient local heat generation...... that leads to melting and reshaping of the imprinted nanostructures. Depending on the laser pulse energy density, different surface morphologies that support different plasmonic resonances leading to different colour appearances can be created. Using this technique we can print all primary colours...

  1. Optimising Laser Tattoo Removal

    Science.gov (United States)

    Sardana, Kabir; Ranjan, Rashmi; Ghunawat, Sneha

    2015-01-01

    Lasers are the standard modality for tattoo removal. Though there are various factors that determine the results, we have divided them into three logical headings, laser dependant factors such as type of laser and beam modifications, tattoo dependent factors like size and depth, colour of pigment and lastly host dependent factors, which includes primarily the presence of a robust immune response. Modifications in the existing techniques may help in better clinical outcome with minimal risk of complications. This article provides an insight into some of these techniques along with a detailed account of the factors involved in tattoo removal. PMID:25949018

  2. Laser welding engineering

    International Nuclear Information System (INIS)

    Bhieh, N. M.; El Eesawi, M. E.; Hashkel, A. E.

    2007-01-01

    Laser welding was in its early life used mainly for unusual applications where no other welding process would be suitable that was twenty five years ago. Today, laser welding is a fully developed part of the metal working industry, routinely producing welds for common items such as cigarette lighters, which springs, motor/transformer lamination, hermetic seals, battery and pacemaker cans and hybrid circuit packages. Yet very few manufacturing engineering have seriously considers employing lasers in their own operations. Why? There are many reasons, but a main one must be not acquainted with the operation and capabilities of a laser system. Other reasons, such as a relatively high initial cost and a concern about using lasers in the manufacturing environment, also are frequently cited, and the complexity of the component and flexibility of the light delivery system. Laser welding could be used in place of many different standard processes, such as resistance (spot or seam), submerged arc, RF induction, high-frequency resistance, ultrasonic and electronic and electron-beam. while each of these techniques has established an independent function in the manufacturing world, the flexible laser welding approach will operate efficiently and economically in many different applications. Its flexibility will even permit the welding system to be used for other machining function, such as drilling, scribing, sealing and serializing. In this article, we will look at how laser welding works and what benefits it can offer to manufacturing engineers. Some industry observers state that there are already 2,000 laser machine tools being used for cutting, welding and drilling and that the number could reach 30,000 over the next 15 years as manufacturing engineers become more aware of the capabilities of lasers [1). While most laser applications are dedicated to one product or process that involves high-volume, long-run manufacturing, the flexibility of a laser to supply energy to hard

  3. Laser Megajoule synchronization system

    International Nuclear Information System (INIS)

    Luttmann, M.; Pastor, J.F; Drouet, V.; Prat, M.; Raimbourg, J.; Adolf, A.

    2011-01-01

    This paper describes the synchronisation system under development on the Laser Megajoule (LMJ) in order to synchronize the laser quads on the target to better than 40 ps rms. Our architecture is based on a Timing System (TS) which delivers trigger signals with jitter down to 15 ps rms coupled with an ultra precision timing system with 5 ps rms jitter. In addition to TS, a sensor placed at the target chamber center measures the arrival times of the 3 omega nano joule laser pulses generated by front end shots. (authors)

  4. Laser applications in neurosurgery

    Science.gov (United States)

    Cerullo, Leonard J.

    1985-09-01

    The "false start" of the laser in neurosurgery should not be misconstrued as a denial of the inherent advantages of precision and gentleness in dealing with neural tissue. Rather, early investigators were frustrated by unrealistic expectations, cumbersome equipment, and a general ignorance of microtechnique. By the early 70s, microneurosurgery was well established, surgical laser equipment for free hand and microlinked application had been developed, and a more realistic view of the limitations of the laser had been established. Consequently, the late 70s really heralded the renaissance of the laser in neurosurgery. Since then, there has been an overwhelming acceptance of the tool in a variety of clinical situations, broadly categorized in five groups. 1)|Perhaps the most generally accepted area is in the removal of extra-axial tumors of the brain and spinal cord. These tumors, benign by histology but treacherous by location, do not present until a significant amount of neurological compensation has already occurred. The application of additional trauma to the neural tissue, whether by further tumor growth or surgical manipulation, frequently results in irreversible damage. Here, the ability of the laser to vaporize tissue, in a fairly hemostatic fashion, without mechanical or thermal damage to sensitive surrounding tissues, is essential. 2)|The ability to incise delicate neural tissue with minimal spread of thermal destruction to adjacent functioning tissue makes the laser the ideal instrument when tumors deep under the surface are encountered in the brain or spinal cord. Thus, the second group of applications is in the transgression of normal neural structures to arrive at deeper pathological tissue. 3)|The third area of benefit for the laser in neurosurgery has been in the performance of neuroablative procedures, calling for deliberate destruction of functioning neural tissue in a controlled fashion. Again, the precision and shape confinement of the destructive

  5. Laser tests of silicon detectors

    International Nuclear Information System (INIS)

    Dolezal, Zdenek; Escobar, Carlos; Gadomski, Szymon; Garcia, Carmen; Gonzalez, Sergio; Kodys, Peter; Kubik, Petr; Lacasta, Carlos; Marti, Salvador; Mitsou, Vasiliki A.; Moorhead, Gareth F.; Phillips, Peter W.; Reznicek, Pavel; Slavik, Radan

    2007-01-01

    This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented

  6. Multispot fiber laser welding

    DEFF Research Database (Denmark)

    Schutt Hansen, Klaus

    This dissertation presents work and results achieved in the field of multi beam fiber laser welding. The project has had a practical approach, in which simulations and modelling have been kept at a minimum. Different methods to produce spot patterns with high power single mode fiber lasers have...... been examined and evaluated. It is found that both diamond turned DOE’s in zinc sulphide and multilevel etched DOE’s (Diffractive Optical Elements) in fused silica have a good performance. Welding with multiple beams in a butt joint configuration has been tested. Results are presented, showing it has...... been possible to control the welding width in incremental steps by adding more beams in a row. The laser power was used to independently control the keyhole and consequently the depth of fusion. An example of inline repair of a laser weld in butt joint configuration was examined. Zinc powder was placed...

  7. Lasers and holography

    CERN Document Server

    Kock, Winston E

    1981-01-01

    Accessible, illustrated introduction covers wave patterns and coherence, summarizes the development of lasers and the phenomenon of wave diffraction, and describes zone plates and properties of holograms. 1981 edition.

  8. Jupiter Laser Facility

    Data.gov (United States)

    Federal Laboratory Consortium — The Jupiter Laser Facility is an institutional user facility in the Physical and Life Sciences Directorate at LLNL. The facility is designed to provide a high degree...

  9. Blackbody metamaterial lasers

    KAUST Repository

    Liu, Changxu

    2015-01-01

    We investigate both theoretically and experimentally a new type of laser, which exploits a broadband light "condensation" process sustained by the stimulated amplification of an optical blackbody metamaterial. © 2014 Optical Society of America.

  10. Electra Laser Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: The Electra Laser Facility is used to develop the science and technology needed to develop a reliable, efficient, high-energy, repetitively pulsed krypton...

  11. Airclad fiber laser technology

    DEFF Research Database (Denmark)

    Hansen, Kim P.; Olausson, Christina Bjarnal Thulin; Broeng, Jes

    2011-01-01

    High-power fiber lasers and amplifiers have gained tremendous momentum in the last 5 years. Many of the traditional manufacturers of gas and solid-state lasers are now pursuing the fiber-based systems, which are displacing the conventional technology in many areas. High-power fiber laser systems...... require reliable fibers with large cores, stable mode quality, and good power handling capabilities-requirements that are all met by the airclad fiber technology. In the present paper we go through many of the building blocks needed to build high-power systems and we show an example of a complete airclad...... laser system. We present the latest advancements within airclad fiber technology including a new 100 m single-mode polarization-maintaining rod-type fiber capable of amplifying to megawatt power levels. Furthermore, we describe the novel airclad-based pump combiners and their use in a completely...

  12. Laser fusion overview

    International Nuclear Information System (INIS)

    Nuckolls, J.

    1976-01-01

    Because of recent breakthroughs in the target area, and in the glass laser area, the scientific feasibility of laser fusion--and of inertial fusion--may be demonstrated in the early 1980's. Then the development in that time period of a suitable laser (or storage ring or other driving source) would make possible an operational inertial fusion reactor in this century. These are roughly the same time scales as projected by the Tokamak magnetic confinement approach. It thus appears that the 15-20 year earlier start by magnetic confinement fusion may be overcome. Because inertial confinement has been demonstrated, and inertial fusion reactors may operate on smaller scales than Tokamaks, laser fusion may have important technical and economic advantages

  13. Laser therapy for periodontitis

    Science.gov (United States)

    Efanov, O. I.

    2001-04-01

    An investigation was made of applying pulsed (lambda) equals 0.89 micrometers laser radiation in the treatment for early diagnosed periodontitis. The investigation was made on 65 patients (47 patients constituted the experimental group and 18 patients constituted a control group) affected by periodontitis. Clinical and functional tests revealed that laser therapy produced a string effect on the course of the illness. It reduced bleeding, inflammation, and pruritus. However, it did not produce an affect on electroexcitation. Biomicroscopic examinations and periodontium rheography revealed that the gingival blood flow became normal after the course of laser therapy. The capillary permeability and venous congestion decreased, which was confirmed by the increased time of vacuum tests, raised gingival temperature, reduced tissue clearance, and increased oxygen tension. Apart from that, laser therapy subsided fibrinolysis, proteolytic tissue activity, and decreased the exudative inflammation of periodontium.

  14. Laser Guidance Analysis Facility

    Data.gov (United States)

    Federal Laboratory Consortium — This facility, which provides for real time, closed loop evaluation of semi-active laser guidance hardware, has and continues to be instrumental in the development...

  15. Airclad fiber laser technology

    DEFF Research Database (Denmark)

    Hansen, Kim P.; Olausson, Christina Bjarnal Thulin; Broeng, Jes

    2008-01-01

    High-power fiber lasers and amplifiers have gained tremendous momentum in the last five years, and many of the traditional manufactures of gas and solid-state lasers are pursuing the attractive fiber-based systems, which are now displacing the old technology in many areas. High-power fiber laser...... systems require specially designed fibers with large cores and good power handling capabilities - requirements that are all met by the airclad fiber technology. In the present paper we go through many of the building blocks needed to build high-power systems and we show an example of a complete airclad...... laser system. We present the latest advancements within airclad fiber technology including a new 70 μm single-mode polarization-maintaining rod-type fiber capable of amplifying to MW power levels. Furthermore we describe the novel airclad based pump combiners and their use in a completely monolithic 350...

  16. Improved Laser Vibration Radar

    National Research Council Canada - National Science Library

    Hilaire, Pierre

    1998-01-01

    .... This thesis reconfigured an existing CO2 laboratory laser radar system that is capable of measuring the frequencies of vibration of a simulated target into a more compact and rugged form for field testing...

  17. Physics of laser plasma

    International Nuclear Information System (INIS)

    Rubenchik, A.; Witkowski, S.

    1991-01-01

    This book provides a comprehensive review of laser fusion plasma physics and contains the most up-to-date information on high density plasma physics and radiation transport, useful for astrophysicists and high density physicists

  18. Fusion reactor pumped laser

    International Nuclear Information System (INIS)

    Jassby, D.L.

    1988-01-01

    A nuclear pumped laser is described comprising: a toroidal fusion reactor, the reactor generating energetic neutrons; an annular gas cell disposed around the outer periphery of the reactor, the cell including an annular reflecting mirror disposed at the bottom of the cell and an annular output window disposed at the top of the cell; a gas lasing medium disposed within the annular cell for generating output laser radiation; neutron reflector material means disposed around the annular cell for reflecting neutrons incident thereon back into the gas cell; neutron moderator material means disposed between the reactor and the gas cell and between the gas cell and the neutron reflector material for moderating the energy of energetic neutrons from the reactor; converting means for converting energy from the moderated neutrons to energy pumping means for pumping the gas lasing medium; and beam compactor means for receiving output laser radiation from the annular output window and generating a single output laser beam therefrom

  19. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  20. YAG Laser or bur

    African Journals Online (AJOL)

    2018-02-23

    Feb 23, 2018 ... for the clinical durability of resin-based dental restorations.[1]. Microleakage ... studies evaluating the use of laser systems in primary teeth for cavity ... sealed with glass ionomer restorative material (Fuji. II LC, GC Corporation ...

  1. Foundations of laser spectroscopy

    CERN Document Server

    Stenholm, Stig

    2005-01-01

    A simple presentation of the theoretical foundations of steady-state laser spectroscopy, this text helps students to apply theory to calculations with a systematic series of examples and exercises. 1984 edition.

  2. Thermonuclear fusion by laser

    International Nuclear Information System (INIS)

    Delpech, J.-F.; Fabre, Edouard.

    1978-01-01

    This paper is intended to describe the principle of inetia containment by laser and the research effort undertaken for this purpose. After having enumerated the principal thermonuclear reactions useful for fusion, the authors derive the rhoR criterion that characterizes inertia containment, as well as the Lawson criterion in the case of magnetic containment. The main physics problems involved in inertia containment by laser are enunciated and the article ends with a review of means resorted to in France and abroad for studying this problem. This review also reports C.N.R.S. bustling in this field, within the scope of competence of G.I.L.M. (Groupement de Recherches Coordonnees sur l'Interaction Laser-Matiere = Group for coordinated investigation of matter-laser interaction) established in Paris at the Ecole Polytechnique [fr

  3. DIFFRACTION SYNCHRONIZATION OF LASERS,

    Science.gov (United States)

    semiconductor lasers while suppressing parasitic generation in the plane of the mirror. The diffraction coupling coefficient of open resonators is calculated, and the stability conditions of the synchronized system is determined.

  4. Efficiencies of laser dyes for atomic vapor laser isotope separation

    International Nuclear Information System (INIS)

    Maeda, Mitsuo; Oki, Yuji; Uchiumi, Michihiro; Takao, Takayuki; Igarashi, Kaoru; Shimamoto, Kojiro.

    1995-01-01

    Efficiencies of 30 laser dyes for the atomic vapor laser isotope separation (AVLIS) are experimentally evaluated with a dye laser pumped by a frequency-doubled Nd:YAG laser. On the other hand, a simulation code is developed to describe the laser action of Rhodamine 6G, and the dependence of the laser efficiency on the pump wavelength is calculated. Following conclusions are obtained by these considerations:space: 1) Pyrromethene 567 showed 16% higher laser efficiency than Rhodamine 6G by 532 nm pumping, and Pyrromethene 556 has an ability to provide better efficiency by green light pumping with a Cu vapor laser; 2) Kiton red 620 and Rhodamine 640, whose efficiencies were almost the same as Rhodamine 6G by 532 nm pumping, will show better efficiencies by two-wavelength pumping with a Cu vapor laser. (author)

  5. Future prospects of laser diodes and fiber lasers

    International Nuclear Information System (INIS)

    Ueda, Ken-ichi

    2000-01-01

    For the next century we should develop new concepts for coherent control of light generation and propagation. Owing to the recent development of ultra fine structures in semiconductor lasers, fiber lasers, and various kinds of waveguide structure, we can make optical devices which control the light propagation artificially. But, the phase locking and phase control of multiple laser oscillators are one of the most important directions of laser science and technology. The coherent summation has been a dream of laser since 1960. Is it possible to solve this old and quite challenging problem for laser science? This is also a very basic concept because the laser action based on the stimulated emission is the process of coherent summation of huge number of photons emitted from individual atoms. In this paper, I discuss the fundamental direction of laser research in the next ten or twenty years. The active optics and laser technology should be combined intrinsically in near future. (author)

  6. High-energy molecular lasers self-controlled volume-discharge lasers and applications

    CERN Document Server

    Apollonov, V V

    2016-01-01

    This book displays the physics and design of high-power molecular lasers. The lasers described are self-controlled volume-discharge lasers. The book explains self-sustained discharge lasers, self-initiated discharge lasers and technical approaches to laser design. Important topics discussed are laser efficiency, laser beam quality and electric field homogeneity. The book contains many new innovative applications.

  7. Transurethral vaporesection of prostate: diode laser or thulium laser?

    Science.gov (United States)

    Tan, Xinji; Zhang, Xiaobo; Li, Dongjie; Chen, Xiong; Dai, Yuanqing; Gu, Jie; Chen, Mingquan; Hu, Sheng; Bai, Yao; Ning, Yu

    2018-05-01

    This study compared the safety and effectiveness of the diode laser and thulium laser during prostate transurethral vaporesection for treating benign prostate hyperplasia (BPH). We retrospectively analyzed 205 patients with BPH who underwent a diode laser or thulium laser technique for prostate transurethral vaporesection from June 2016 to June 2017 and who were followed up for 3 months. Baseline characteristics of the patients, perioperative data, postoperative outcomes, and complications were compared. We also assessed the International Prostate Symptom Score (IPSS), quality of life (QoL), maximum flow rate (Q max ), average flow rate (AFR), and postvoid residual volume (PVR) at 1 and 3 months postoperatively to evaluate the functional improvement of each group. There were no significant differences between the diode laser and thulium laser groups related to age, prostate volume, operative time, postoperative hospital stays, hospitalization costs, or perioperative data. The catheterization time was 3.5 ± 0.8 days for the diode laser group and 4.7 ± 1.8 days for the thulium laser group (p diode laser and thulium laser contributes to safe, effective transurethral vaporesection in patients with symptomatic BPH. Diode laser, however, is better than thulium laser for prostate transurethral vaporesection because of its shorter catheterization time. The choice of surgical approach is more important than the choice of laser types during clinical decision making for transurethral laser prostatectomy.

  8. Pulsed chemical laser

    International Nuclear Information System (INIS)

    Jacobson, T.V.; Kimbell, G.H.

    1975-01-01

    A hydrogen fluoride laser capable of operating super radiantly and at atmospheric pressure is described. A transverse electrical discharge is utilized to energize the reaction of a hydrogen donor to provide hydrogen fluoride in a metastable energy state which reverts to a stable state by laser action. A large range of hydrogen and fluorine donors is disclosed. A preferred pair of donors is sulphur hexafluoride and propane. Helium is frequently added to the gas mix to act as a buffer. (U.S.)

  9. Hybrid vertical cavity laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2010-01-01

    A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide.......A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide....

  10. Laser Resurfacing Pearls

    OpenAIRE

    Shah, Sonia; Alam, Murad

    2012-01-01

    Ablative skin resurfacing using the carbon dioxide laser was long considered the gold standard for treatment of photoaging, acne scars, and rhytids. However, conventional full-face carbon dioxide resurfacing is associated with significant risk of side effects and a prolonged postoperative recovery period. Fractional resurfacing has recently revolutionized laser surgery by offering close to comparable results with minimal side effects and a more rapid recovery. Although fractional devices have...

  11. Laser cooling of solids

    Energy Technology Data Exchange (ETDEWEB)

    Epstein, Richard I [Los Alamos National Laboratory; Sheik-bahae, Mansoor [UNM

    2008-01-01

    We present an overview of solid-state optical refrigeration also known as laser cooling in solids by fluorescence upconversion. The idea of cooling a solid-state optical material by simply shining a laser beam onto it may sound counter intuitive but is rapidly becoming a promising technology for future cryocooler. We chart the evolution of this science in rare-earth doped solids and semiconductors.

  12. Laser radiation protection

    International Nuclear Information System (INIS)

    Pantelic, D.; Muric, B.; Vasiljevic, D.

    2011-01-01

    We have presented the effects of laser radiation on human organism, with special emphasize on eye as the most sensitive organ. It was pointed-out that there are many parameters that should be taken into account when determining the level of protection from laser light. In that respect it is important to be aware of international standards that regulate this area. In addition, we have described a new material which efficiently protects human eye, by formation of microlens and carbonization. [sr

  13. SHIVA laser: nearing completion

    International Nuclear Information System (INIS)

    Glaze, J.A.; Godwin, R.O.

    1977-01-01

    Construction of the Shiva laser system is nearing completion. This laser will be operating in fall 1977 and will produce over 20 terawatts of focusable power in a subnanosecond pulse. Fusion experiments will begin early in 1978. It is anticipated that thermonuclear energy release equal to one percent that of the incident light energy will be achieved with sub-millimeter deuterium-tritium targets. From other experiments densities in excess of a thousand times that of liquid are also expected

  14. Laser Scanning in Forests

    Directory of Open Access Journals (Sweden)

    Håkan Olsson

    2012-09-01

    Full Text Available The introduction of Airborne Laser Scanning (ALS to forests has been revolutionary during the last decade. This development was facilitated by combining earlier ranging lidar discoveries [1–5], with experience obtained from full-waveform ranging radar [6,7] to new airborne laser scanning systems which had components such as a GNSS receiver (Global Navigation Satellite System, IMU (Inertial Measurement Unit and a scanning mechanism. Since the first commercial ALS in 1994, new ALS-based forest inventory approaches have been reported feasible for operational activities [8–12]. ALS is currently operationally applied for stand level forest inventories, for example, in Nordic countries. In Finland alone, the adoption of ALS for forest data collection has led to an annual savings of around 20 M€/year, and the work is mainly done by companies instead of governmental organizations. In spite of the long implementation times and there being a limited tradition of making changes in the forest sector, laser scanning was commercially and operationally applied after about only one decade of research. When analyzing high-ranked journal papers from ISI Web of Science, the topic of laser scanning of forests has been the driving force for the whole laser scanning research society over the last decade. Thus, the topic “laser scanning in forests” has provided a significant industrial, societal and scientific impact. [...

  15. CO2 laser cutting

    CERN Document Server

    Powell, John

    1998-01-01

    The laser has given manufacturing industry a new tool. When the laser beam is focused it can generate one of the world's most intense energy sources, more intense than flames and arcs, though similar to an electron beam. In fact the intensity is such that it can vaporise most known materials. The laser material processing industry has been growing swiftly as the quality, speed and new manufacturing possibilities become better understood. In the fore of these new technologies is the process of laser cutting. Laser cutting leads because it is a direct process substitu­ tion and the laser can usually do the job with greater flexibility, speed and quality than its competitors. However, to achieve these high speeds with high quality con­ siderable know how and experience is required. This information is usually carefully guarded by the businesses concerned and has to be gained by hard experience and technical understanding. Yet in this book John Powell explains in lucid and almost non­ technical language many o...

  16. Reverse spontaneous laser line sweeping in ytterbium fiber laser

    Czech Academy of Sciences Publication Activity Database

    Navrátil, Petr; Peterka, Pavel; Honzátko, Pavel; Kubeček, V.

    2017-01-01

    Roč. 14, č. 3 (2017), č. článku 035102. ISSN 1612-2011 R&D Projects: GA ČR(CZ) GA16-13306S Institutional support: RVO:67985882 ; RVO:68378271 Keywords : laser line sweeping * ytterbium * fiber lasers Subject RIV: BH - Optics, Masers, Lasers; BH - Optics, Masers, Lasers (FZU-D) OBOR OECD: Optics (including laser optics and quantum optics); Optics (including laser optics and quantum optics) (FZU-D) Impact factor: 2.537, year: 2016

  17. Laser Diode Pumped Solid State Lasers

    Science.gov (United States)

    1987-01-01

    Report N66001-83-C-0071, 17 April 1986, prepared for NOSC. 4.6 W.T. Welford, R. Winston , "The Option of Nonimaging Concentrators ," Academic Press, 1978...by non-imac optics such as reflective or refractive flux concentrators . Simple considerations regarding the optimum pumping configuration, high marks...reduced if the arrays can stand-off from the Nd:YAG laser. As mentioned before, compound parabolic concentrators or refractive optics cat employed to

  18. Greco Laser-matter interaction

    International Nuclear Information System (INIS)

    1986-01-01

    Research program in 1985 at GRECO ILM (Group of Coordinated Research: Interaction Laser Matter) continued with its principal direction in fundamental physics of laser inertial confinement; also researches on X-ray lasers hare been undergone and new high power laser application fields with particle acceleration, material processing and X-ray sources. A six beam laser was operated. Wavelength effects were studied. Atomic physics was deeply stressed as dense medium diagnostics from multicharged ions. Research development in ultra-dense medium was also important X-ray laser research gave outstanding results. New research fields were developed this year: laser acceleration of particles by wave beating or Raman instability; dense laser produced plasma use as X-ray source; material processing by laser shocks [fr

  19. Ultracompact Pseudowedge Plasmonic Lasers and Laser Arrays.

    Science.gov (United States)

    Chou, Yu-Hsun; Hong, Kuo-Bin; Chang, Chun-Tse; Chang, Tsu-Chi; Huang, Zhen-Ting; Cheng, Pi-Ju; Yang, Jhen-Hong; Lin, Meng-Hsien; Lin, Tzy-Rong; Chen, Kuo-Ping; Gwo, Shangjr; Lu, Tien-Chang

    2018-02-14

    Concentrating light at the deep subwavelength scale by utilizing plasmonic effects has been reported in various optoelectronic devices with intriguing phenomena and functionality. Plasmonic waveguides with a planar structure exhibit a two-dimensional degree of freedom for the surface plasmon; the degree of freedom can be further reduced by utilizing metallic nanostructures or nanoparticles for surface plasmon resonance. Reduction leads to different lightwave confinement capabilities, which can be utilized to construct plasmonic nanolaser cavities. However, most theoretical and experimental research efforts have focused on planar surface plasmon polariton (SPP) nanolasers. In this study, we combined nanometallic structures intersecting with ZnO nanowires and realized the first laser emission based on pseudowedge SPP waveguides. Relative to current plasmonic nanolasers, the pseudowedge plasmonic lasers reported in our study exhibit extremely small mode volumes, high group indices, high spontaneous emission factors, and high Purell factors beneficial for the strong interaction between light and matter. Furthermore, we demonstrated that compact plasmonic laser arrays can be constructed, which could benefit integrated plasmonic circuits.

  20. Lasers in endodontics: an overview

    Science.gov (United States)

    Frentzen, Matthias; Braun, Andreas; Koort, Hans J.

    2002-06-01

    The interest in endodontic use of dental laser systems is increasing. Developing laser technology and a better understanding of laser effects widened the spectrum of possible endodontic indications. Various laser systems including excimer-, argon+-, diode-, Nd:YAG-, Er:YAG- and CO2-lasers are used in pulp diagnosis, treatment of hypersensitivity, pulp capping, sterilization of root canals, root canal shaping and obturation or apicoectomy. With the development of new delivery systems - thin and flexible fibers - for many different wavelengths laser applications in endodontics may increase. Since laser devices are still relatively costly, access to them is limited. Most of the clinical applications are laser assisted procedures such as the removing of pulp remnants and debris or disinfection of infected root canals. The essential question is whether a laser can provide improved treatment over conventional care. To perform laser therapy in endodontics today different laser types with adopted wavelengths and pulse widths are needed, each specific to a particular application. Looking into the future we will need endodontic laser equipment providing optimal laser parameters for different treatment modalities. Nevertheless, the quantity of research reports from the last decade promises a genuine future for lasers in endodontics.

  1. Update on diode-pumped solid-state laser experiments for inertial fusion energy

    International Nuclear Information System (INIS)

    Marshall, C.; Smith, L.; Payne, S.

    1994-01-01

    The authors have completed the initial phase of the diode-pumped solid-state laser (DPSSL) experimental program to validate the expected pumping dynamics and extraction cross-sections of Yb 3+ -doped Sr 5 (PO 4 ) 3 F (Yb:S-FAP) crystals. Yb:S-FAP crystals up to 25 x 25 x 175 mm in size have been grown for this purpose which have acceptable loss characteristics ( 2 ). The saturation fluence for pumping has been measured to be 2.2 J/cm 2 using three different methods based on either the spatial, temporal, or energy transmission properties of a Yb:S-FAP rod. The small signal gain under saturated pumping conditions was measured. These measurements imply an emission cross section of 6.0 x 10 -20 cm 2 that falls within error bars of the previously reported value of 7.3 x 10 -20 cm 2 , obtained from purely spectroscopic techniques. The effects of radiation trapping on the emission lifetime have been quantified. The long lifetime of Yb:S-FAP has beneficial effects for diode-pumped amplifier designs, relative to materials with equivalent cross sections but shorter lifetimes, in that less peak pump intensity is required (thus lower diode costs) and that lower spontaneous emission rates lead to a reduction in amplified spontaneous emission. Consequently, up to 1.7 J/cm 3 of stored energy density was achieved in a 6x6x44 mm Yb:S-FAP amplifier rod; this stored energy density is large relative to typical flashlamp-pumped Nd:glass values of 0.3 to 0.5 J/cm 3 . A 2.4 kW peak power InGaAs diode array has been fabricated by Beach, Emanuel, and co-workers which meets the central wavelength, bandwidth, and energy specifications for the author's immediate experiments. These results further increase their optimism of being able to produce a ∼ 10% efficient diode-pumped solid state laser for inertial fusion energy

  2. Development of frequency tunable Ti:sapphire laser and dye laser pumped by a pulsed Nd:YAG laser

    International Nuclear Information System (INIS)

    Yi, Jong Hoon; Horn, Roland; Wendt, K.

    2001-01-01

    We investigated lasing characteristics of two kinds of tunable laser, liquid dye laser and solid Ti:sapphire crystal laser, pumped by high pulse repetition rate Nd:YAG laser. Dye laser showed drastically reduced pulsewidth compared with that of pump laser and it also contained large amount of amplified spontaneous emission. Ti:sapphire laser showed also reduced pulsewidth. But, the laser conversion pump laser and Ti:sapphire laser pulse, we used a Brewster-cut Pockel's cell for Q-switching. The laser was frequency doubled by a type I BBO crystal outside of the cavity.

  3. Femtosecond Fiber Lasers

    Science.gov (United States)

    Bock, Katherine J.

    This thesis focuses on research I have done on ytterbium-doped femtosecond fiber lasers. These lasers operate in the near infrared region, lasing at 1030 nm. This wavelength is particularly important in biomedical applications, which includes but is not limited to confocal microscopy and ablation for surgical incisions. Furthermore, fiber lasers are advantageous compared to solid state lasers in terms of their cost, form factor, and ease of use. Solid state lasers still dominate the market due to their comparatively high energy pulses. High energy pulse generation in fiber lasers is hindered by either optical wave breaking or by multipulsing. One of the main challenges for fiber lasers is to overcome these limitations to achieve high energy pulses. The motivation for the work done in this thesis is increasing the output pulse peak power and energy. The main idea of the work is that decreasing the nonlinearity that acts on the pulse inside the cavity will prevent optical wave breaking, and thus will generate higher energy pulses. By increasing the output energy, ytterbium-doped femtosecond fiber lasers can be competitive with solid state lasers which are used commonly in research. Although fiber lasers tend to lack the wavelength tuning ability of solid state lasers, many biomedical applications take advantage of the 1030 microm central wavelength of ytterbium-doped fiber lasers, so the major limiting factor of fiber lasers in this field is simply the output power. By increasing the output energy without resorting to external amplification, the cavity is optimized and cost can remain low and economical. During verification of the main idea, the cavity was examined for possible back-reflections and for components with narrow spectral bandwidths which may have contributed to the presence of multipulsing. Distinct cases of multipulsing, bound pulse and harmonic mode-locking, were observed and recorded as they may be of more interest in the future. The third

  4. Lasers '90: Proceedings of the 13th International Conference on Lasers and Applications, San Diego, CA, Dec. 10-14, 1990

    International Nuclear Information System (INIS)

    Harris, D.G.; Herbelin, J.

    1991-01-01

    The general topics considered are: x-ray lasers; FELs; solid state lasers; techniques and phenomena of ultrafast lasers; optical filters and free space laser communications; discharge lasers; tunable lasers; applications of lasers in medicine and surgery; lasers in materials processing; high power lasers; dynamics gratings, wave mixing, and holography; up-conversion lasers; lidar and laser radar; laser resonators; excimer lasers; laser propagation; nonlinear and quantum optics; blue-green technology; imaging; laser spectroscopy; chemical lasers; dye lasers; and lasers in chemistry

  5. High power ultrashort pulse lasers

    International Nuclear Information System (INIS)

    Perry, M.D.

    1994-01-01

    Small scale terawatt and soon even petawatt (1000 terawatt) class laser systems are made possible by application of the chirped-pulse amplification technique to solid-state lasers combined with the availability of broad bandwidth materials. These lasers make possible a new class of high gradient accelerators based on the large electric fields associated with intense laser-plasma interactions or from the intense laser field directly. Here, we concentrate on the laser technology to produce these intense pulses. Application of the smallest of these systems to the production of high brightness electron sources is also introduced

  6. Injection-controlled laser resonator

    Science.gov (United States)

    Chang, J.J.

    1995-07-18

    A new injection-controlled laser resonator incorporates self-filtering and self-imaging characteristics with an efficient injection scheme. A low-divergence laser signal is injected into the resonator, which enables the injection signal to be converted to the desired resonator modes before the main laser pulse starts. This injection technique and resonator design enable the laser cavity to improve the quality of the injection signal through self-filtering before the main laser pulse starts. The self-imaging property of the present resonator reduces the cavity induced diffraction effects and, in turn, improves the laser beam quality. 5 figs.

  7. Laser safety in the lab

    CERN Document Server

    Barat, Ken L

    2012-01-01

    There is no more challenging setting for laser use than a research environment. In almost every other setting the laser controls count on engineering controls, and human exposure is kept to a minimum. In research, however, the user often manipulates the optical layout and thereby places him or herself in peril, but this does not mean that accidents and injury are unavoidable. On the contrary, laser accidents can be avoided by following a number of simple approaches. [i]Laser Safety in the Lab[/i] provides the laser user and laser safety officer with practical guidelines from housekeeping to ey

  8. NTES laser facility for physics experiments

    International Nuclear Information System (INIS)

    Christie, D.J.; Foley, R.J.; Frank, D.N.

    1989-01-01

    This paper discusses the following topics on the NTES laser facility: Mission Statement and Project Description; Experiment Area; High-Energy, Double-Pass Laser; Facilities; Laser Control and Data Acquisition; and Auxiliary Lasers

  9. Theoretical studies of solar-pumped lasers

    Science.gov (United States)

    Harries, W. L.

    1983-01-01

    Possible types of lasers were surveyed for solar power conversion. The types considered were (1) liquid dye lasers, (2) vapor dye lasers, and (3) nondissociative molecular lasers. These are discussed.

  10. Laser-based additive manufacturing of metals

    CSIR Research Space (South Africa)

    Kumar, S

    2010-11-01

    Full Text Available For making metallic products through Additive Manufacturing (AM) processes, laser-based systems play very significant roles. Laser-based processes such as Selective Laser Melting (SLM) and Laser Engineered Net Shaping (LENS) are dominating processes...

  11. Ultrashort pulse laser technology laser sources and applications

    CERN Document Server

    Schrempel, Frank; Dausinger, Friedrich

    2016-01-01

    Ultrashort laser pulses with durations in the femtosecond range up to a few picoseconds provide a unique method for precise materials processing or medical applications. Paired with the recent developments in ultrashort pulse lasers, this technology is finding its way into various application fields. The book gives a comprehensive overview of the principles and applications of ultrashort pulse lasers, especially applied to medicine and production technology. Recent advances in laser technology are discussed in detail. This covers the development of reliable and cheap low power laser sources as well as high average power ultrashort pulse lasers for large scale manufacturing. The fundamentals of laser-matter-interaction as well as processing strategies and the required system technology are discussed for these laser sources with respect to precise materials processing. Finally, different applications within medicine, measurement technology or materials processing are highlighted.

  12. Transcanalicular laser dacryocystorhinostomy using low energy 810 nm diode laser

    Directory of Open Access Journals (Sweden)

    Sanjiv K Gupta

    2012-01-01

    Conclusions: Transcanalicular Laser DCR can be safely performed using a low power 810 nm diode laser. The surgery is elegant, minimally invasive, allows fast rehabilitation, and has an excellent success rate.

  13. Laser spectroscopy and laser isotope separation of atomic gadolinium

    International Nuclear Information System (INIS)

    Chen, Y. W.; Yamanaka, C.; Nomaru, K.; Kou, K.; Niki, H.; Izawa, Y.; Nakai, S.

    1994-01-01

    Atomic vapor laser isotope separation (AVLIS) is a process which uses intense pulsed lasers to selectively photoionize one isotopic species of a chemical element, after which these ions are extracted electromagnetically. The AVLIS has several advantages over the traditional methods based on the mass difference, such as high selectivity, low energy consumption, short starting time and versatility to any atoms. The efforts for atomic vapor laser isotope separation at ILT and ILE, Osaka University have been concentrated into the following items: 1) studies on laser spectroscopy and laser isotope separation of atomic gadolinium, 2) studies on interaction processes including coherent dynamics, propagation effects and atom-ion collision in AVLIS system, 3) development of laser systems for AVLIS. In this paper, we present experimental results on the laser spectroscopy and laser isotope separation of atomic gadolinium.

  14. Laser marking method and device

    International Nuclear Information System (INIS)

    Okazaki, Yuki; Aoki, Nobutada; Mukai, Narihiko; Sano, Yuji; Yamamoto, Seiji.

    1997-01-01

    An object is disposed in laser beam permeating liquid or gaseous medium. Laser beams such as CW laser or pulse laser oscillated from a laser device are emitted to the object to apply laser markings with less degradation of identification and excellent corrosion resistance on the surface of the object simply and easily. Upon applying the laser markings, a liquid or gas as a laser beam permeating medium is blown onto the surface of the object, or the liquid or gas in the vicinity of the object is sucked, the laser beam-irradiated portion on the surface can be cooled positively. Accordingly, the laser marking can be formed on the surface of the object with less heat affection to the object. In addition, if the content of a nitrogen gas in the laser beam permeating liquid medium is reduced by degassing to lower than a predetermined value, or the laser beam permeating gaseous medium is formed by an inert gas, a laser marking having high corrosion resistance and reliability can be formed on the surface of the objective member. (N.H.)

  15. Proceedings of national laser symposium (NLS-2000)

    International Nuclear Information System (INIS)

    Mallik, Amitav; Srivastava, K.N.; Pal, Suranjan

    2000-01-01

    This proceedings comprise of a series of invited talks on selected topics in lasers and wide range of contributed papers. The main topics are laser physics and research, laser devices and technology, laser materials and spectroscopy, quantum optics, non-linear optics ultra-fast phenomenon, laser produced plasma, high power lasers, laser instrumentation, medical applications and industrial applications of lasers and fiber optics. The papers relevant to INIS Database are indexed separately

  16. Laser tissue interactions: an update for otolaryngology

    Science.gov (United States)

    Reinisch, Lou

    2000-05-01

    We review the laser, characteristics of laser light, the delivery of laser light, pulse lengths and laser tissue interactions. We review these parameters and how they have changed over the history of the laser and how we expect them to change in the future. This survey of laser use is targeted to the otolaryngologist. Very little background in lasers is necessary to follow the discussion. This is intended to introduce and reintroduce laser technology.

  17. Photonic Molecule Lasers Revisited

    Science.gov (United States)

    Gagnon, Denis; Dumont, Joey; Déziel, Jean-Luc; Dubé, Louis J.

    2014-05-01

    Photonic molecules (PMs) formed by coupling two or more optical resonators are ideal candidates for the fabrication of integrated microlasers, photonic molecule lasers. Whereas most calculations on PM lasers have been based on cold-cavity (passive) modes, i.e. quasi-bound states, a recently formulated steady-state ab initio laser theory (SALT) offers the possibility to take into account the spectral properties of the underlying gain transition, its position and linewidth, as well as incorporating an arbitrary pump profile. We will combine two theoretical approaches to characterize the lasing properties of PM lasers: for two-dimensional systems, the generalized Lorenz-Mie theory will obtain the resonant modes of the coupled molecules in an active medium described by SALT. Not only is then the theoretical description more complete, the use of an active medium provides additional parameters to control, engineer and harness the lasing properties of PM lasers for ultra-low threshold and directional single-mode emission. We will extend our recent study and present new results for a number of promising geometries. The authors acknowledge financial support from NSERC (Canada) and the CERC in Photonic Innovations of Y. Messaddeq.

  18. HF-laser program

    International Nuclear Information System (INIS)

    Anon.

    1978-01-01

    Sandia's HF-laser program for FY 77 and FY 78 was revised in June 1977 in order to meet several new program milestones. Research progress is reported on: objective of HF oscillator-amplifier studies using H 2 -F 2 gas mixtures; characteristics of large-volume oscillator using H 2 -F 2 mixtures; characteristics of large-volume amplifier using H 2 -F 2 mixtures; experimental results of the oscillator-amplifier study; objective of high-quality discharge-initiated SF 6 -HI oscillator-preamplifier system; pin-discharge-initiated oscillator and first beam expander; fast-discharge-initiated preamplifiers; reflecting beam expanders for oscillator-preamplifier system; beam quality of discharge-initiated oscillator-preamplifier system; short pulse option for discharge initiated SF 6 -HI system; H 2 -F 2 electron-beam-initiated oscillator-preamplifier system; chamber for HF-laser focusing experiments; computer study of parasitic oscillations in HF amplifiers and oscillators; kinetics upgrade of HF-laser code; repetitivey ignited flowing H 2 -F 2 -O 2 mixtures; spontaneous detonations in multiatmosphere H 2 -F 2 -O 2 mixtures; high-pressure H 2 -F 2 laser studies; and time sequenced energy extraction on the high xenon laser

  19. Pulsed inductive HF laser

    Energy Technology Data Exchange (ETDEWEB)

    Razhev, A M; Kargapol' tsev, E S [Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk (Russian Federation); Churkin, D S; Demchuk, S V [Novosibirsk State University, Novosibirsk (Russian Federation)

    2016-03-31

    We report the results of experimentally investigated dependences of temporal, spectral and spatial characteristics of an inductive HF-laser generation on the pump conditions. Gas mixtures H{sub 2} – F{sub 2}(NF{sub 3} or SF6{sub 6}) and He(Ne) – H{sub 2} – F{sub 2}(NF{sub 3} or SF{sub 6}) were used as active media. The FWHM pulse duration reached 0.42 μs. This value corresponded to a pulsed power of 45 kW. For the first time, the emission spectrum of an inductive HF laser was investigated, which consisted of seven groups of bands with centres around the wavelengths of 2732, 2736, 2739, 2835, 2837, 2893 and 2913 nm. The cross section profile of the laser beam was a ring with a diameter of about 20 mm and width of about 5 mm. Parameters of laser operation in the repetitively pulsed regime were sufficiently stable. The amplitude instability of light pulses was no greater than 5% – 6%. (lasers)

  20. Industrial lasers in Japan

    Science.gov (United States)

    Karube, Norio

    1991-03-01

    I am to report on some aspects of industrial lasers in Japan. Mostly centering on the market. In Japan, the history of laser developnent is rather profound. And long. Ever since the first invention of the laser in this country in 1960. This is partly because of the fact that in Japan the spectroscopic studies of the ruby was very popular in the late 1950's. Ever since niost of the work has been done in the research laboratories of the industry, not in the universities or not in the governmental laboratories. And since that time our first activity was mainly centering on the basic research, but after that time we have the evolution of the technology. One of the features in Japan is that the activity of developement and research of laser technology from the very basic phase up to the present commercialization has been done by the same group of people, including ine. We had a national project which ended about six years ago which was sponsored by MITI. MITI is Ministry of International Trade and Industry in Japan. And because of this national project, the effect of this project had a very enlightening effect in Japan. And after that our Japanese laser market became very flourishing.

  1. Laser power sources and laser technology for accelerators

    International Nuclear Information System (INIS)

    Lowenthal, D.

    1986-01-01

    The requirements on laser power sources for advanced accelerator concepts are formidable. These requirements are driven by the need to deliver 5 TeV particles at luminosities of 10/sup 33/ - 10/sup 34/ cm/sup -2/ sec/sup -1/. Given that optical power can be transferred efficiently to the particles these accelerator parameters translate into single pulse laser output energies of several kilojoules and rep rates of 1-10 kHz. The average laser output power is then 10-20 MW. Larger average powers will be needed if efficient transfer proves not to be possible. A laser plant of this magnitude underscores the importance of high wall plug efficiency and reasonable cost in $/Watt. The interface between the laser output pulse format and the accelerator structure is another area that drives the laser requirements. Laser accelerators break up into two general architectures depending on the strength of the laser coupling. For strong coupling mechanisms, the architecture requires many ''small'' lasers powering the accelerator in a staged arrangement. For the weak coupling mechanisms, the architecture must feature a single large laser system whose power must be transported along the entire accelerator length. Both of these arrangements have demanding optical constraints in terms of phase matching sequential stages, beam combining arrays of laser outputs and optimizing coupling of laser power in a single accelerating stage

  2. Laser Ablation of Biological Tissue Using Pulsed CO2 Laser

    International Nuclear Information System (INIS)

    Hashishin, Yuichi; Sano, Shu; Nakayama, Takeyoshi

    2010-01-01

    Laser scalpels are currently used as a form of laser treatment. However, their ablation mechanism has not been clarified because laser excision of biological tissue occurs over a short time scale. Biological tissue ablation generates sound (laser-induced sound). This study seeks to clarify the ablation mechanism. The state of the gelatin ablation was determined using a high-speed video camera and the power reduction of a He-Ne laser beam. The aim of this study was to clarify the laser ablation mechanism by observing laser excision using the high-speed video camera and monitoring the power reduction of the He-Ne laser beam. We simulated laser excision of a biological tissue by irradiating gelatin (10 wt%) with radiation from a pulsed CO 2 laser (wavelength: 10.6 μm; pulse width: 80 ns). In addition, a microphone was used to measure the laser-induced sound. The first pulse caused ablation particles to be emitted in all directions; these particles were subsequently damped so that they formed a mushroom cloud. Furthermore, water was initially evaporated by laser irradiation and then tissue was ejected.

  3. Lasers in atomic, molecular and nuclear physics

    International Nuclear Information System (INIS)

    Letokhov, V.S.

    1986-01-01

    This book presents papers on laser applications in atomic, molecular and nuclear physics. Specifically discussed are: laser isotope separation; laser spectroscopy of chlorophyll; laser spectroscopy of molecules and cell membranes; laser detection of atom-molecule collisions and lasers in astrophysics

  4. The application of laser plasma in ophthalmology

    International Nuclear Information System (INIS)

    He Yujiang; Luo Le; Sun Yabing

    2000-01-01

    The production and development of laser plasma are introduced, and the contribution of laser biomedicine and laser plasma technology to ophthalmology is analyzed. The latest three progresses (laser photocoagulation, photo-refractive keratotomy and laser iridectomy) of laser plasma applications in ophthalmology are presented

  5. Novel plasmon nano-lasers

    NARCIS (Netherlands)

    Hill, M.T.; Marell, M.J.H.

    2010-01-01

    We will discuss some of the latest developments in metallic and plasmonic nano-lasers. Furthermore we will present our latest results on further miniaturization of electrically pumped plasmonic nano-lasers and also DFB Plasmon mode devices.

  6. Coupled optical resonance laser locking.

    Science.gov (United States)

    Burd, S C; du Toit, P J W; Uys, H

    2014-10-20

    We have demonstrated simultaneous laser frequency stabilization of a UV and IR laser, to coupled transitions of ions in the same spectroscopic sample, by detecting only the absorption of the UV laser. Separate signals for locking the different lasers are obtained by modulating each laser at a different frequency and using lock-in detection of a single photodiode signal. Experimentally, we simultaneously lock a 369 nm and a 935 nm laser to the (2)S(1/2) → (2)(P(1/2) and (2)D(3/2) → (3)D([3/2]1/2) transitions, respectively, of Yb(+) ions generated in a hollow cathode discharge lamp. Stabilized lasers at these frequencies are required for cooling and trapping Yb(+) ions, used in quantum information and in high precision metrology experiments. This technique should be readily applicable to other ion and neutral atom systems requiring multiple stabilized lasers.

  7. Laser cladding of turbine blades

    International Nuclear Information System (INIS)

    Shepeleva, L.; Medres, B.; Kaplan, W.D.; Bamberger, M.

    2000-01-01

    A comparative study of two different techniques for the application of wear-resistant coatings for contact surfaces of shroud shelves of gas turbine engine blades (GTE) has been conducted. Wear-resistant coatings were applied on In713 by laser cladding with direct injection of the cladding powder into the melt pool. Laser cladding was conducted with a TRUMPF-2500, CW-CO 2 laser. The laser cladding was compared with commercially available plasma cladding with wire. Both plasma and laser cladded zones were characterized by optical and scanning electron microscopy. It was found that the laser cladded zone has a higher microhardness value (650-820 HV) compared with that of the plasma treated material (420-440 HV). This is a result of the significant reduction in grain size in the case of laser cladding. Unlike the plasma cladded zones, the laser treated material is free of micropores and microcracks. (orig.)

  8. Nano lasers in photonic VLSI

    NARCIS (Netherlands)

    Hill, M.T.; Oei, Y.S.; Smit, M.K.

    2007-01-01

    We examine the use of micro and nano lasers to form digital photonic VLSI building blocks. Problems such as isolation and cascading of building blocks are addressed, and the potential of future nano lasers explored.

  9. Laser sources for object illumination

    Energy Technology Data Exchange (ETDEWEB)

    Albrecht, G.F. [Lawrence Livermore National Lab., CA (United States)

    1994-11-15

    The considerations which formulate the specifications for a laser illuminator are explained, using the example of an underwater object. Depending on the parameters which define the scenario, widely varying laser requirements result.

  10. Polarisation effects in fibre lasers

    OpenAIRE

    Lin, J.T.; Morkel, P.R.; Reekie, L.; Payne, D.N.

    1987-01-01

    Two orthogonal polarisation eigenmodes have been observed in a single-mode fibre laser. Experimental investigation shows good agreement with theoretical analysis. Both Nd3+ and Er3+-doped single-polarisation single-mode fibre lasers have been demonstrated

  11. Flashlamp excited fluid laser amplified

    International Nuclear Information System (INIS)

    1976-01-01

    The patent describes a laser amplifier with chambers for containing and amplifying an intensifier medium. It serves the need for a large impulse repetition rate and high intensities as required e.g. for laser isotope separation

  12. XeBr exciplex laser

    International Nuclear Information System (INIS)

    Searles, S.K.

    1976-01-01

    Laser emission from the recently discovered XeBr exciplex laser was investigated as a function of the partial pressures of Xe and Br 2 . An optical loss process appears to limit high-pressure operation

  13. Polymer laser bio-sensors

    DEFF Research Database (Denmark)

    Kristensen, Anders; Vannahme, Christoph; Hermannsson, Pétur Gordon

    2014-01-01

    Organic dye based distributed feed-back lasers, featuring narrow linewidth and thus high quality spectral resolution, are used as highly sensitive refractive index sensors. The design, fabrication and application of the laser intra-cavity sensors are discussed....

  14. Laser Diagnostics for Reacting Flows

    National Research Council Canada - National Science Library

    Hanson, Ronald K

    2007-01-01

    ... (UV) or infrared (IR) wavelengths. The cw lasers were spectrally narrow, allowing study of innovative diagnostics based on spectral lineshapes, while the pulsed lasers provided intense bursts of photons needed for techniques based on LIF...

  15. Primer on laser scattering diagnostics

    International Nuclear Information System (INIS)

    Jahoda, F.C.

    1978-07-01

    The theory of laser scattering is presented in abbreviated format, with emphasis on physical interpretation, followed by sections on laser sources, practical considerations in designing experiments, and current developments in extending the techniques to multispace and multitime point measurements

  16. Femtosecond laser spectroscopy

    CERN Document Server

    Hannaford, Peter

    2005-01-01

    As concepts and methodologies have evolved over the past two decades, the realm of ultrafast science has become vast and exciting and has impacted many areas of chemistry, biology and physics, and other fields such as materials science, electrical engineering, and optical communication. The field has recently exploded with the announcement of a series of remarkable new developments and advances. This volume surveys this recent growth in eleven chapters written by leading international researchers in the field. It includes sections on femtosecond optical frequency combs, soft x-ray femtosecond laser sources, and attosecond laser sources. In addition, the contributors address real-time spectroscopy of molecular vibrations with sub-5-fs pulses and multidimensional femtosecond coherent spectroscopies for studying molecular and electron dynamics. Novel methods for measuring and characterizing ultrashort laser pulses and ultrashort pulses of light are also described. The topics covered are revolutionizing the field...

  17. Laser facilitates vaccination

    Directory of Open Access Journals (Sweden)

    Ji Wang

    2016-01-01

    Full Text Available Development of novel vaccine deliveries and vaccine adjuvants is of great importance to address the dilemma that the vaccine field faces: to improve vaccine efficacy without compromising safety. Harnessing the specific effects of laser on biological systems, a number of novel concepts have been proposed and proved in recent years to facilitate vaccination in a safer and more efficient way. The key advantage of using laser technology in vaccine delivery and adjuvantation is that all processes are initiated by physical effects with no foreign chemicals administered into the body. Here, we review the recent advances in using laser technology to facilitate vaccine delivery and augment vaccine efficacy as well as the underlying mechanisms.

  18. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  19. Excimer laser technology

    International Nuclear Information System (INIS)

    Mace, P.N.

    1980-01-01

    Scaling presently available excimer laser systems to lasers designed to operate at high average power and high pulse repetition rates for long periods of time requires advances in many areas of engineering technology. For economical application to industrial processes, the efficiency must be increased. This leads to more stringent requirements on preionization techniques, energy delivery systems, and system chemistry. Long life operation (> 10 9 to 10 10 pulses) requires development of new pulse power components, optical elements and flow system components. A broad-based program underway at the Los Alamos Scientific Laboratory is addressing these key technology issues, with the help of advanced component and systems development programs in industry. A prototype XeCl laser meeting all requirements for efficiency, system performance and life is scheduled for completion in 1984

  20. Laser cooling at resonance

    Science.gov (United States)

    Yudkin, Yaakov; Khaykovich, Lev

    2018-05-01

    We show experimentally that three-dimensional laser cooling of lithium atoms on the D2 line is possible when the laser light is tuned exactly to resonance with the dominant atomic transition. Qualitatively, it can be understood by applying simple Doppler cooling arguments to the specific hyperfine structure of the excited state of lithium atoms, which is both dense and inverted. However, to build a quantitative theory, we must resolve to a full model which takes into account both the entire atomic structure of all 24 Zeeman sublevels and the laser light polarization. Moreover, by means of Monte Carlo simulations, we show that coherent processes play an important role in showing consistency between the theory and the experimental results.