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Sample records for prurigo nodularis pn

  1. Methotrexate for refractory prurigo nodularis

    Directory of Open Access Journals (Sweden)

    Mariam Al Zaabi

    2017-01-01

    Full Text Available Prurigo nodularis (PN is chronic unbearable inflammatory skin disease. Although it was described before a century, not many studies have been conducted regarding the systemic treatment of prurigo nodularis. A 64-year-old male patient has moderate to severe atopic dermatitis superimposed by disseminated pruritic nodules over the trunk and extremities. In spite of topical treatment and Phototherapy, patient condition was deteriorating. Therefore, the patient was treated with multimodalities including high potency topical steroid, intravenous antihistamine, cyclosporine and omalizumab without improvement. Thus the patient has been treated with methotrexate which led to remarkable improvement. Management of prurigo nodularis is often challenging as the etiology of PN in the majority of the cases is unknown. Conservative treatments are often inefficient. This case proves the efficacy of methotrexate in the management of prurigo nodularis.

  2. Prurigo Nodularis With Cutaneous Horn

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    Thadeus Joseph

    1997-01-01

    Full Text Available Cutaneous horns are rare horny excrescences which occur in various dermatoses. We report a girl with prurigo nodularis who developed a horn on one of the nodules. This unique association has not been reported so far.

  3. Biopsychosocial Factors Associated with Prurigo Nodularis in Endogenous Eczema.

    Science.gov (United States)

    Oh, Choon Chiat; Li, Huihua; Lee, Wellington; Tey, Hong Liang

    2015-01-01

    Prurigo nodularis is a dermatological manifestation secondary to chronic scratching or picking on focal areas of the skin. Its pathogenesis remains poorly understood, and limited data has indicated its association with psychological factors. To determine the biological, psychological and social factors associated with the occurrence of prurigo nodularis in patients with underlying endogenous eczema. A prospective case-control questionnaire -based study on patients with endogenous eczema, with and without prurigo nodules, was performed. The Impact of Skin Disease on Daily Life questionnaire was used to assess dimensions of physical functioning, including extent and severity of skin disease, itch, pain, fatigue and scratching, as well as dimensions of psychological and social functioning, including mood, illness cognition, disease-related impact, stigmatization and social support. Thirty-six cases and 47 controls were recruited. Patients with endogenous eczema and prurigo nodules indicated a higher itch score on the visual analog scale over the previous 4 weeks compared to those without prurigo nodules (p=0.0292). There were no significant differences between the 2 groups in the scores reflecting the other parameters of physical, psychological and social functioning. In patients with endogenous eczema, those with prurigo nodules experience a greater itch intensity compared to those without prurigo nodules. There were no other physical, psychological and social factors that were found to be associated with the occurrence of prurigo nodules in endogenous eczema.

  4. The use of biodegradable microneedle patches to increase penetration of topical steroid for prurigo nodularis.

    Science.gov (United States)

    Shin, Jung U; Kim, Jung Dong; Kim, Hong Kee; Kang, Hong Kyu; Joo, Chulmin; Lee, Ju Hee; Jeong, Do Hyeon; Song, Seungri; Chu, Howard; Lee, Jung Soo; Lee, Hemin; Lee, Kwang Hoon

    2018-02-01

    The stratum corneum is an almost impermeable barrier. Recently, microneedles have been used to increase drug delivery passing the stratum corneum by incorporating the drug within the microneedle or by coating the surface of the microneedle with the drug. This study was performed to investigate whether applying a biodegradable microneedle patch after topical steroid application increases penetration of the steroid in vitro, as well as treatment efficacy in patients with prurigo nodularis. In vitro penetration of topical steroids after biodegradable microneedle patch application was measured using a 3D skin model. To evaluate the treatment efficacy of the combination of biodegradable microneedle and topical steroids, a split-body clinical study was performed. Penetration of topical steroid in the in vitro skin model was significantly greater in the microneedle-applied skin. In a split-body clinical study with prurigo nodularis patients, the area and height of skin lesions decreased after four weeks of treatment on both sides, however, the microneedle patch side exhibited a significantly greater decrease in both area and height, compared to the control side. The pruritus visual analogue scale was also significantly lower on the microneedle side. We suggest that simply applying a microneedle patch after topical steroid application could be a useful strategy for treating refractory skin diseases such as prurigo nodularis.

  5. Chronic Prurigo: An Unusual Presentation of Hodgkin Lymphoma

    Directory of Open Access Journals (Sweden)

    Shireen Dumont

    2018-05-01

    Full Text Available Background: Prurigo nodularis is a condition of unknown origin defined by papulonodular eruption and intense pruritus. Hodgkin lymphoma often presents nonspecific initial symptoms. An association between systemic malignancy and cutaneous manifestations has long been documented. We report a case of prurigo nodularis as a first presentation of Hodgkin lymphoma. Case: A 35-year-old woman presented with a 2-year history of pruritus. Previously diagnosed with bedbugs, the pruritus persisted even after insect eradication, with the appearance of papulonodular lesions consistent with chronic prurigo. The pruritus and the pain were refractory to all treatments. She had no past medical history or clinical, radiological, or laboratory findings. A lymphadenopathy was revealed 2 years after onset of the symptoms. Lymph node biopsy showed a nodular sclerosis Hodgkin lymphoma. The patient was initiated on chemotherapy and the skin lesions decreased. Conclusion: This case report of chronic prurigo as the first manifestation of a systemic malignancy reminds us of the importance of a systematic diagnostic approach to this kind of patients initially and throughout time, especially if the symptoms do not respond to treatment. Our case may question the role of imaging examinations in the management and follow-up of a persistent prurigo nodularis.

  6. Case for diagnosis. Actinic prurigo.

    Science.gov (United States)

    Daldon, Patricia Erica Christofoletti; Pascini, Mirella; Correa, Mariane

    2010-01-01

    A 13-year-old black boy had pruritic papular and nodular lesions on his forearms associated to edema of the lower lip, photophobia, conjunctivitis and pterygium. Skin biopsy of the lower lip revealed acanthosis, spongiosis with dermal perivascular mononuclear cell infiltration composed by lymphocytes, plasma cells and eosinophils consistent with actinic prurigo. Lesions improved considerably with the use of thalidomide 100mg/ day.

  7. Early Stage Prurigo Pigmentosa : A Case Report

    Directory of Open Access Journals (Sweden)

    Emel ONAYGİL

    2018-05-01

    Full Text Available Prurigo pigmentosa is a rare inflammatory dermatosis that primarily affects adolescents and young adults. Even though it is most commonly seen in Japanese women, other countries have reported cases with increasing frequency. It is characterized by erythematous papules and macules on the trunk, neck and chest that resolve leaving a reticulate hyperpigmentation. Some endogenous factors related with ketosis like fasting, diet, diabetes, pregnancy and exogenous agents like chrome, nickel, para-amino compounds have been accused of playing a role in etiology. Here we would like to present a case of a 16-year-old female patient who was referred to our clinic with pruritic lesions on the trunk and neck, consistent with the initial phase of prurigo pigmentosa, after a period of strict diet. Prurigo pigmentosa is a disease with distinctive histologic and clinical features. Due to its rare occurrence, an accurate diagnosis may be particularly challenging. Clinicopathological correlation is therefore crucial in the diagnosis of the disease in its early phase.

  8. Actinic prurigo in Scandinavian adolescent successfully treated with cyclosporine A

    Directory of Open Access Journals (Sweden)

    Jan C. Sitek

    2017-06-01

    Full Text Available Actinic prurigo is a pruritic sun-induced dermatosis classified among the immunologically mediated photodermatoses. The disease is a well-known entity among Native Americans and in Central and South America, however rare in Caucasians with only a few reports from Australia, Britain and France. We report the first case of actinic prurigo in a Scandinavian patient, responding favorably to systemic treatment with cyclosporine A.

  9. Actinic Prurigo in Scandinavian Adolescent Successfully Treated with Cyclosporine A.

    Science.gov (United States)

    Sitek, Jan C

    2017-03-13

    Actinic prurigo is a pruritic sun-induced dermatosis classified among the immunologically mediated photodermatoses. The disease is a well-known entity among Native Americans and in Central and South America, however rare in Caucasians with only a few reports from Australia, Britain and France. We report the first case of actinic prurigo in a Scandinavian patient, responding favorably to systemic treatment with cyclosporine A.

  10. European academy of dermatology and venereology European prurigo project: expert consensus on the definition, classification and terminology of chronic prurigo.

    Science.gov (United States)

    Pereira, M P; Steinke, S; Zeidler, C; Forner, C; Riepe, C; Augustin, M; Bobko, S; Dalgard, F; Elberling, J; Garcovich, S; Gieler, U; Gonçalo, M; Halvorsen, J A; Leslie, T A; Metz, M; Reich, A; Şavk, E; Schneider, G; Serra-Baldrich, E; Ständer, H F; Streit, M; Wallengren, J; Weller, K; Wollenberg, A; Bruland, P; Soto-Rey, I; Storck, M; Dugas, M; Weisshaar, E; Szepietowski, J C; Legat, F J; Ständer, S

    2017-08-31

    The term prurigo has been used for many decades in dermatology without clear definition, and currently used terminology of prurigo is inconsistent and confusing. Especially, itch-related prurigo remains unexplored regarding the epidemiology, clinical profile, natural course, underlying causes, available treatments and economic burden, although burdensome and difficult to treat. To address these issues, the multicentre European Prurigo Project (EPP) was designed to increase knowledge on chronic prurigo (CPG). In the first step, European experts of the EADV Task Force Pruritus (TFP) aimed to achieve a consensus on the definition, classification and terminology of CPG. Additionally, procedures of the cross-sectional EPP were discussed and agreed upon. Discussions and surveys between members of the TFP served as basis for a consensus conference. Using the Delphi method, consensus was defined as an agreement ≥75% among the present members. Twenty-four members of the TFP participated in the consensus conference. Experts consented that CPG should be used as an umbrella term for the range of clinical manifestations (e.g. papular, nodular, plaque or umbilicated types). CPG is considered a distinct disease defined by the presence of chronic pruritus for ≥6 weeks, history and/or signs of repeated scratching and multiple localized/generalized pruriginous skin lesions (whitish or pink papules, nodules and/or plaques). CPG occurs due to a neuronal sensitization to itch and the development of an itch-scratch cycle. This new definition and terminology of CPG should be implemented in dermatology to harmonize communication in the clinical routine, clinical trials and scientific literature. Acute/subacute forms of prurigo are separated entities, which need to be differentiated from CPG and will be discussed in a next step. In the near future, the cross-sectional EPP will provide relevant clinical data on various aspects of CPG leading to new directions in the scientific

  11. Coexistence of adult-onset actinic prurigo and shampoo dermatitis: A case report

    Directory of Open Access Journals (Sweden)

    Tsung-Ju Lee

    2018-06-01

    Full Text Available Actinic prurigo is a rare and acquired idiopathic photodermatosis. It usually shows childhood onset and female predominance. Here, we present an unusual case of a male patient with coexistence of adult-onset actinic prurigo and shampoo-induced allergic contact dermatitis. He was initially diagnosed with actinic prurigo. However, after detailed examination of the distribution of the rash, careful collection of his history, and interpretation of the results of histopathologic analysis, photo test, patch test, and photopatch test, coexistence of adult-onset actinic prurigo and shampoo-induced allergic contact dermatitis associated with cocamidopropyl betaine was diagnosed. The rash improved after appropriate use of sunscreen and avoidance of shampoo containing this allergen. Dermatologists should be aware of the possibility of concurrent photodermatitis and contact dermatitis. Keywords: Actinic prurigo, Cocamidopropyl betaine, Contact dermatitis, Photosensitivity, Shampoo dermatitis

  12. Acute prurigo simplex in humans caused by pigeon lice.

    Science.gov (United States)

    Stolf, Hamilton Ometto; Reis, Rejane d'Ávila; Espósito, Ana Cláudia Cavalcante; Haddad Júnior, Vidal

    2018-03-01

    Pigeon lice are insects that feed on feathers of these birds; their life cycle includes egg, nymph and adult and they may cause dermatoses in humans. Four persons of the same family, living in an urban area, presented with widespread intensely pruritic erythematous papules. A great number of lice were seen in their house, which moved from a nest of pigeons located on the condenser of the air-conditioning to the dormitory of one of the patients. Even in urban environments, dermatitis caused by parasites of birds is a possibility in cases of acute prurigo simplex. Pigeon lice are possible etiological agents of this kind of skin eruption, although they are often neglected, even by dermatologists.

  13. Personal network (PN) applications

    DEFF Research Database (Denmark)

    Prasad, R.; Skouby, Knud Erik

    2005-01-01

    The applications of PN will be realised under many scenarios where users can have access to their personal network all the time. This network will enable the user to share critical information, play games, control their home remotely, etc. All this will be achieved with seamless interworking...... and handover between networks and user devices. This paper presents an array of use case scenarios that validates the ubiquitous usage of PN....

  14. Vector grammars and PN machines

    Institute of Scientific and Technical Information of China (English)

    蒋昌俊

    1996-01-01

    The concept of vector grammars under the string semantic is introduced.The dass of vector grammars is given,which is similar to the dass of Chomsky grammars.The regular vector grammar is divided further.The strong and weak relation between the vector grammar and scalar grammar is discussed,so the spectrum system graph of scalar and vector grammars is made.The equivalent relation between the regular vector grammar and Petri nets (also called PN machine) is pointed.The hybrid PN machine is introduced,and its language is proved equivalent to the language of the context-free vector grammar.So the perfect relation structure between vector grammars and PN machines is formed.

  15. On the Adjacent Strong Equitable Edge Coloring of PnPn, Pn ∨ Cn and Cn ∨ Cn

    OpenAIRE

    Liu Jun; Zhao Chuan Cheng; Yao Shu Xia; Guo Ren Zhi; Yue Qiu Ju

    2016-01-01

    A proper edge coloring of graph G is called equitable adjacent strong edge coloring if colored sets from every two adjacent vertices incident edge are different,and the number of edges in any two color classes differ by at most one,which the required minimum number of colors is called the adjacent strong equitable edge chromatic number. In this paper, we discuss the adjacent strong equitable edge coloring of join-graphs about PnPn, Pn ∨ Cn and Cn ∨ Cn.

  16. Silicon fiber with p-n junction

    International Nuclear Information System (INIS)

    Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

    2014-01-01

    In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

  17. Electroplated Ni on the PN Junction Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-05-15

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm{sup 2}. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased.

  18. Electroplated Ni on the PN Junction Semiconductor

    International Nuclear Information System (INIS)

    Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae

    2015-01-01

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm 2 . The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased

  19. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  20. Agent-based Personal Network (PN) service architecture

    DEFF Research Database (Denmark)

    Jiang, Bo; Olesen, Henning

    2004-01-01

    In this paper we proposte a new concept for a centralized agent system as the solution for the PN service architecture, which aims to efficiently control and manage the PN resources and enable the PN based services to run seamlessly over different networks and devices. The working principle...

  1. (p,n) reaction at intermediate energy

    International Nuclear Information System (INIS)

    Goodman, C.D.

    1979-01-01

    The use of the (p,n) reaction in exploring effective interactions is reviewed. Some recent data on self-conjugate nuclei taken at the Indiana University Cyclotron Facility (IUCF) are presented, and the differences between low- and high-energy data are emphasized. Experimental problems and techniques used are briefly described. It is concluded that forward-angle (p,n) spectra at energies greater than 100 MeV are dominated by Gamow-Teller (GT) transitions, while Fermi transitions (IAS transitions) dominate near 45 MeV. Prominent GT transitions are expected from a pion-exchange interaction, and it is expected that OPEP is the dominant component of the interaction in the energy range of 100 to 200 MeV. 27 figures, 2 tables

  2. Cimidíase (dermatose por percevejo: uma causa de prurigo a ser lembrada Bedbugs (Heteroptera, Cimicidae: an etiology of pruritus to be remembered

    Directory of Open Access Journals (Sweden)

    Paulo Ricardo Criado

    2011-02-01

    Full Text Available Descrevemos uma doente de 19 anos que nos procurou com quadro de intenso prurido há 2 semanas e demonstrando lesões eritêmato-pápulo-urticadas mais intensamente distribuídas nos membros superiores e inferiores. A anamnese detalhada excluiu causas internas e medicamentos como uma possível causa do prurigo. Após orientações quanto a dedetização do domicílio a doente retornou no consultório após 3 semanas sem lesões cutâneas e trazendo em um pote de vidro vários percevejos coletados após a dedetização.This report describes a 19-year old female patient, who sought medical attention for severe itching of two weeks' duration. Erythematous papules and wheals were found, principally on her upper and lower limbs. Careful anamnesis excluded other etiologies of the pruritus, including those related to internal diseases and medication. Following counseling regarding the need to contract a domestic pest control company, the patient returned to the clinic three weeks later with no skin lesions and bearing a glass jar containing several bedbugs collected following pest control treatment.

  3. Superconductivity and Competing Ordered Phase in RuPn (Pn = As, P)

    Science.gov (United States)

    Hirai, Daigorou; Takayama, Tomohiro; Hashizume, Daisuke; Yamamoto, Ayako; Takagi, Hidenori

    2011-03-01

    Unconventional superconductivity likely manifests itself when some competing electronic phases are suppressed down to zero temperature such as cuprates and iron-pnictide superconductors. Therefore, the correlated metallic state neighboring a competing electronic ordering can be a promising playground for unconventional superconductivity. Here we report superconductivity emerging adjacent to electronically ordered phases of RuPn (Pn = As, P). We found that RuAs(P) exhibits phase transitions at 240 (265) K, which is discerned as a drop of magnetic susceptibility or a resistivity upturn. Such anomalies can be suppressed by substituting Rh to the Ru site. Accompanied by the disappearance of the electronic order, superconductivity was found to emerge below 1.8 K and 3.8 K for RuAs and RuP, respectively. The superconductivity in Rh substituted RuPn, which neighbors a competing electronic order, might exhibit an exotic pairing state as seen in the unconventional superconductors known to date.

  4. Mapping Pn amplitude spreading and attenuation in Asia

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Xiaoning [Los Alamos National Laboratory; Phillips, William S [Los Alamos National Laboratory; Stead, Richard J [Los Alamos National Laboratory

    2010-12-06

    Pn travels most of its path in the mantle lid. Mapping the lateral variation of Pn amplitude attenuation sheds light on material properties and dynamics of the uppermost region of the mantle. Pn amplitude variation depends on the wavefront geometric spreading as well as material attenuation. We investigated Pn geometric spreading, which is much more complex than a traditionally assumed power-law spreading model, using both synthetic and observed amplitude data collected in Asia. We derived a new Pn spreading model based on the formulation that was proposed previously to account for the spherical shape of the Earth (Yang et. al., BSSA, 2007). New parameters derived for the spreading model provide much better correction for Pn amplitudes in terms of residual behavior. Because we used observed Pn amplitudes to construct the model, the model incorporates not only the effect of the Earth's spherical shape, but also the effect of potential upper-mantle velocity gradients in the region. Using the new spreading model, we corrected Pn amplitudes measured at 1, 2, 4 and 6 Hz and conducted attenuation tomography. The resulting Pn attenuation model correlates well with the regional geology. We see high attenuation in regions such as northern Tibetan Plateau and the western Pacific subduction zone, and low attenuation for stable blocks such as Sichuan and Tarim basins.

  5. Novel pneumoviruses (PnVs): Evolution and inflammatory pathology

    International Nuclear Information System (INIS)

    Glineur, Stephanie F.; Renshaw, Randall W.; Percopo, Caroline M.; Dyer, Kimberly D.; Dubovi, Edward J.; Domachowske, Joseph B.; Rosenberg, Helene F.

    2013-01-01

    A previous report of a novel pneumovirus (PnV) isolated from the respiratory tract of a dog described its significant homology to the rodent pathogen, pneumonia virus of mice (PVM). The original PnV–Ane4 pathogen replicated in and could be re-isolated in infectious state from mouse lung but elicited minimal mortality compared to PVM strain J3666. Here we assess phylogeny and physiologic responses to 10 new PnV isolates. The G/glycoprotein sequences of all PnVs include elongated amino-termini when compared to the characterized PVMs, and suggest division into groups A and B. While we observed significant differences in cytokine production and neutrophil recruitment to the lungs of BALB/c mice in response to survival doses (50 TCID 50 units) of representative group A (114378-10-29-KY-F) and group B (7968-11-OK) PnVs, we observed no evidence for positive selection (dN>dS) among the PnV/PnV, PVM/PnV or PVM/PVM G/glycoprotein or F/fusion protein sequence pairs. - Highlights: • We consider ten novel isolates of the pneumovirus (PnV) first described by Renshaw and colleagues. • The G/glycoprotein sequences of all PnVs include elongated amino-termini when compared to PVM. • We detect cytokine production and neutrophil recruitment to the lungs of mice in response to PnV. • We observed no evidence for positive selection (dN>dS) among the gene sequence pairs

  6. Novel pneumoviruses (PnVs): Evolution and inflammatory pathology

    Energy Technology Data Exchange (ETDEWEB)

    Glineur, Stephanie F. [Inflammation Immunobiology Section, Laboratory of Allergic Diseases, National Institute of Allergy and Infectious Diseases, National Institutes of Health, Bethesda, MD 20892-1883 (United States); Renshaw, Randall W. [Animal Health Diagnostic Center, College of Veterinary Medicine, Cornell University, PO Box 5786, Ithaca, New York, NY 14851-5786 (United States); Percopo, Caroline M.; Dyer, Kimberly D. [Inflammation Immunobiology Section, Laboratory of Allergic Diseases, National Institute of Allergy and Infectious Diseases, National Institutes of Health, Bethesda, MD 20892-1883 (United States); Dubovi, Edward J. [Animal Health Diagnostic Center, College of Veterinary Medicine, Cornell University, PO Box 5786, Ithaca, New York, NY 14851-5786 (United States); Domachowske, Joseph B. [Department of Pediatrics, SUNY Upstate Medical University, Syracuse, NY 13210 (United States); Rosenberg, Helene F., E-mail: hrosenberg@niaid.nih.gov [Inflammation Immunobiology Section, Laboratory of Allergic Diseases, National Institute of Allergy and Infectious Diseases, National Institutes of Health, Bethesda, MD 20892-1883 (United States)

    2013-09-01

    A previous report of a novel pneumovirus (PnV) isolated from the respiratory tract of a dog described its significant homology to the rodent pathogen, pneumonia virus of mice (PVM). The original PnV–Ane4 pathogen replicated in and could be re-isolated in infectious state from mouse lung but elicited minimal mortality compared to PVM strain J3666. Here we assess phylogeny and physiologic responses to 10 new PnV isolates. The G/glycoprotein sequences of all PnVs include elongated amino-termini when compared to the characterized PVMs, and suggest division into groups A and B. While we observed significant differences in cytokine production and neutrophil recruitment to the lungs of BALB/c mice in response to survival doses (50 TCID{sub 50} units) of representative group A (114378-10-29-KY-F) and group B (7968-11-OK) PnVs, we observed no evidence for positive selection (dN>dS) among the PnV/PnV, PVM/PnV or PVM/PVM G/glycoprotein or F/fusion protein sequence pairs. - Highlights: • We consider ten novel isolates of the pneumovirus (PnV) first described by Renshaw and colleagues. • The G/glycoprotein sequences of all PnVs include elongated amino-termini when compared to PVM. • We detect cytokine production and neutrophil recruitment to the lungs of mice in response to PnV. • We observed no evidence for positive selection (dN>dS) among the gene sequence pairs.

  7. Field-effect P-N junction

    Science.gov (United States)

    Regan, William; Zettl, Alexander

    2015-05-05

    This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

  8. Single P-N junction tandem photovoltaic device

    Science.gov (United States)

    Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

    2011-10-18

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  9. Thalidomide neurotoxicity

    DEFF Research Database (Denmark)

    Clemmensen, O J; Olsen, P Z; Andersen, Klaus Ejner

    1984-01-01

    Of six patients treated with thalidomide for either prurigo nodularis or discoid lupus erythematosus, four had paresthesias in the hands and feet and one also complained of muscular pain and stiffness. Clinical neurological findings in all four patients were normal. Subsequent electrophysiological...

  10. The delicate electronic and magnetic structure of the LaFePnO system (Pn = pnicogen)

    Energy Technology Data Exchange (ETDEWEB)

    Lebegue, S [Laboratoire de Cristallographie et de Modelisation des Materiaux Mineraux et Biologiques, UMR 7036, CNRS-Universite Henri Poincare, BP 239, F-54506 Vandoeuvre-les-Nancy (France); Yin, Z P; Pickett, W E [Department of Physics, University of California Davis, Davis, CA 95616 (United States)], E-mail: sebastien.lebegue@lcm3b.uhp-nancy.fr

    2009-02-15

    The occurrence of high-temperature superconductivity, and the competition with magnetism, in stoichiometric and doped LaFeAsO and isostructural iron oxypnictides is raising many fundamental questions about the electronic structure and magnetic interactions in this class of materials. There are now sufficient experimental data that it may be possible to identify the important issues whose resolution will lead to the understanding of this system. In this paper, we address a number of the important issues. One important characteristic is the Fe-As distance (or more abstractly the pnicogen (Pn) height z(Pn)); we present results for the effect of z(Pn) on the electronic structure, energetics and Fe magnetic moment. We also study LaFeAsO under pressure, and investigate the effects of both electron and hole doping within the virtual crystal approximation. The electric field gradients for all atoms in the LaFeAsO compound are presented (undoped and doped) and compared with available data. The observed ({pi}, {pi}, {pi}) magnetic order is studied and compared with the computationally simpler ({pi}, {pi}, 0) order which is probably a very good model in most respects. We investigate the crucial role of the pnicogen atom in this class, and predict the structures and properties of the N and Sb counterparts that have not yet been reported experimentally. At a certain volume a gap opens at the Fermi level in LaFeNO, separating bonding from antibonding bands. This is the first evidence that this class of materials indeed has an underlying semimetallic character, and this separation suggests directions for a better simple understanding of the seemingly intricate electronic structure of this system. Finally, we address briefly differences resulting from substitution of post-lanthanum rare earth atoms, which have been observed to enhance the superconducting critical temperature substantially.

  11. 19th Scientific Readings Devoted to P.N. Chirvinskiy

    Directory of Open Access Journals (Sweden)

    I. Ya. Ilaltdinov

    2017-03-01

    Full Text Available Scientific conference devoted to P.N. Chirvinskiy was held in the Perm State University (January 2017. The problems of mineralogy, petrology, lithology, metallogeny and geochemistry were discussed.

  12. Role of pn-pairs in nuclear structure

    International Nuclear Information System (INIS)

    Nie, G.K.

    2003-01-01

    An α-cluster model of nuclear structure based on power of proton + neutron (pn)-pairs to bind themselves to α-clusters is proposed. The α-cluster is taken as the perfect condition of coupling of 2 pn- pairs, reminding complete electron shell in atomic physics. Pn-pairs create 2 other types of coupling of considerably less power between pn-pairs of nearby α-clusters ε α c and between pn-pair not bound into α-cluster with pn-pairs of nearby cluster ε pn c . Last two types of coupling are called covalent because of reminding similar electron coupling in chemistry. According the model nucleus is a liquid drop consisting of molecules, which are α-clusters, tied by covalent coupling with those ones which are in close vicinity. Then in case of even-even nuclei spin of the nucleus has to be zero I=0 + as sum of spinless particles. In case of nucleus has some nucleons (i) in intermolecular space, I=Σj i ; with taking into account that there is coupling of p and n in pn-pair. Therefore for 6 Li (1=0)I=2·1/2=1 + . The values ε α c , ε pn c and binding energy of the pn-pair itself ε pn have been estimated from analysis of binding energy of nuclei 6 Li, 10 B and 12 C. With the values the binding energy of the other nuclei with N=Z up to 58 Cu have been described with difference between experimental values and model ones in average less than 0.4 MeV. The structure reveals some regular forms, in which every cluster has reduced amount of covalent coupling, 3 or 4, and free pn-pair has 6 covalent coupling with 3 nearby clusters pn-pairs. Then the magic numbers are supposed to be the matter of geometry, when total amount of covalent couplings is optimal (minimal for the amount of clusters), α- clusters are placed in the same fixed distant from center of mass. It means that protons of the clusters can be considered as belonging to one shell. In the cluster model single particle effects have to be considered as single particle binding in one of the surface

  13. Novel Fractional Order Calculus Extended PN for Maneuvering Targets

    Directory of Open Access Journals (Sweden)

    Jikun Ye

    2017-01-01

    Full Text Available Based on the theory of fractional order calculus (FOC, a novel extended proportional guidance (EPN law for intercepting the maneuvering target is proposed. In the first part, considering the memory function and filter characteristic of FOC, the novel extended PN guidance algorithm is developed based on the conventional PN after introducing the properties and operation rules of FOC. Further, with the help of FOC theory, the average load and ballistics characteristics of proposed guidance law are analyzed. Then, using the small offset kinematic model, the robustness of the new guidance law against autopilot parameters is studied theoretically by analyzing the sensitivity of the closed loop guidance system. At last, representative numerical results show that the designed guidance law obtains a better performance than the traditional PN for maneuvering target.

  14. New PN Even Balanced Sequences for Spread-Spectrum Systems

    Directory of Open Access Journals (Sweden)

    Inácio JAL

    2005-01-01

    Full Text Available A new class of pseudonoise even balanced (PN-EB binary spreading sequences is derived from existing classical odd-length families of maximum-length sequences, such as those proposed by Gold, by appending or inserting one extra-zero element (chip to the original sequences. The incentive to generate large families of PN-EB spreading sequences is motivated by analyzing the spreading effect of these sequences from a natural sampling point of view. From this analysis a new definition for PG is established, from which it becomes clear that very high processing gains (PGs can be achieved in band-limited direct-sequence spread-spectrum (DSSS applications by using spreading sequences with zero mean, given that certain conditions regarding spectral aliasing are met. To obtain large families of even balanced (i.e., equal number of ones and zeros sequences, two design criteria are proposed, namely the ranging criterion (RC and the generating ranging criterion (GRC. PN-EB sequences in the polynomial range are derived using these criteria, and it is shown that they exhibit secondary autocorrelation and cross-correlation peaks comparable to the sequences they are derived from. The methods proposed not only facilitate the generation of large numbers of new PN-EB spreading sequences required for CDMA applications, but simultaneously offer high processing gains and good despreading characteristics in multiuser SS scenarios with band-limited noise and interference spectra. Simulation results are presented to confirm the respective claims made.

  15. The Oklahoma PN/ADN Articulation Project Report.

    Science.gov (United States)

    Oklahoma State Regents for Higher Education, Oklahoma City.

    In response to a critical nursing shortage in the state of Oklahoma, the Oklahoma Practical Nursing (PN)/Associate Degree Nursing (ADN) Articulation Project Coordinating Committee was formed in spring 1990 to develop a proposal for program articulation. A curriculum matrix was designed and adopted for use by five regional subcommittees which…

  16. Manufacturing P-N junctions in germanium bodies

    International Nuclear Information System (INIS)

    Hall, R.N.

    1980-01-01

    A method of producing p-n junctions in Ge so as to facilitate their use as radiation detectors involves forming a body of high purity p-type germanium, diffusing lithium deep into the body, in the absence of electrolytic processes, to form a junction between n-type and p-type germanium greater than 1 mm depth. (UK)

  17. Systematics in p-n interaction vs deformation

    International Nuclear Information System (INIS)

    Singh, M.; Singh, Yuvraj; Kumar, Rajesh; Vrshney, A.K.; Gupta, K.K.

    2017-01-01

    The correlation of integrated valance p-n interaction in the onset of collectivity and deformation has been described phenomenologically in terms of N p N n scheme. L. Esser et al. presented the graphs between N p N n and deformation β and γ for some heavy nuclei

  18. Charge exchange probes of nuclear structure and interactions with emphasis on (p,n)

    International Nuclear Information System (INIS)

    Goodman, C.D.

    1980-01-01

    New results from (p,n) studies at IUCF show that it is possible to observe Gamow-Teller (GT) strength and extract GT matrix elements from (p,n) measurements. The charge exchange reactions ( 6 Li, 6 He) and (π + ,π 0 ) involve different projectile quantum numbers, and the relationships of these reactions to (p,n) is discussed

  19. Atomic-scaled characterization of graphene PN junctions

    Science.gov (United States)

    Zhou, Xiaodong; Wang, Dennis; Dadgar, Ali; Agnihotri, Pratik; Lee, Ji Ung; Reuter, Mark C.; Ross, Frances M.; Pasupathy, Abhay N.

    Graphene p-n junctions are essential devices for studying relativistic Klein tunneling and the Veselago lensing effect in graphene. We have successfully fabricated graphene p-n junctions using both lithographically pre-patterned substrates and the stacking of vertical heterostructures. We then use our 4-probe STM system to characterize the junctions. The ability to carry out scanning electron microscopy (SEM) in our STM instrument is essential for us to locate and measure the junction interface. We obtain both the topography and dI/dV spectra at the junction area, from which we track the shift of the graphene chemical potential with position across the junction interface. This allows us to directly measure the spatial width and roughness of the junction and its potential barrier height. We will compare the junction properties of devices fabricated by the aforementioned two methods and discuss their effects on the performance as a Veselago lens.

  20. Structural and thermoelectric properties of zintl-phase CaLiPn (Pn=As, Sb, Bi)

    Energy Technology Data Exchange (ETDEWEB)

    Chandran, Anoop K.; Gudelli, Vijay Kumar; Sreeparvathy, P.C.; Kanchana, V., E-mail: kanchana@iith.ac.in

    2016-11-15

    First-principles calculations were carried out to study the structural, mechanical, dynamical and transport properties of zintl phase materials CaLiPn (Pn=As, Sb and Bi). We have used two different approaches to solve the system based on density functional theory. The plane wave pseudopotential approach has been used to study the structural and dynamical properties whereas, full potential linear augment plane wave method is used to examine the electronic structure, mechanical and thermoelectric properties. The calculated ground-state properties agree quite well with experimental values. The computed electronic structure shows the investigated compounds to be direct band gap semiconductors. Further, we have calculated the thermoelectric properties of all the investigated compounds for both the carriers at various temperatures. We found a high thermopower for both the carriers, especially n-type doping to be more favourable, which enabled us to predict that CaLiPn might have promising applications as a good thermoelectric material. Further, the phonon dispersion curves of the investigated compounds showed flat phonon modes and we also find lower optical and acoustic modes to cut each other at the lower frequency range, which further indicate the investigated compounds to possess reasonably low thermal conductivity. We have also analysed the low value of the thermal conductivity through the empirical relations and discussions are presented here. - Highlights: • Electronic band structure and chemical bonding. • Single crystalline elastic constants and poly crystalline elastic moduli. • Thermoelectric properties of zintl phase. • Lattice dynamics and phonon density of states.

  1. Bio-inspired nanostructures for implementing vertical pn-junctions

    KAUST Repository

    Saffih, Faycal

    2011-08-04

    An apparatus, system, and method having a 3D pn-junction structure are presented. One embodiment of an apparatus includes a substrate, a first doped structure, and a second doped structure. In one embodiment, the first doped structure has a first doping type. The first doped structure may be formed above the substrate and extend outwardly from an upper surface of the substrate. In one embodiment, the second doped structure has a second doping type. The second doped structure may be formed above the substrate and in contact with the first doped structure. Additionally, the second doped structure may extend outwardly from the upper surface of the substrate.

  2. Bio-inspired nanostructures for implementing vertical pn-junctions

    KAUST Repository

    Saffih, Faycal

    2011-01-01

    An apparatus, system, and method having a 3D pn-junction structure are presented. One embodiment of an apparatus includes a substrate, a first doped structure, and a second doped structure. In one embodiment, the first doped structure has a first doping type. The first doped structure may be formed above the substrate and extend outwardly from an upper surface of the substrate. In one embodiment, the second doped structure has a second doping type. The second doped structure may be formed above the substrate and in contact with the first doped structure. Additionally, the second doped structure may extend outwardly from the upper surface of the substrate.

  3. Why does the disorder of R-pn and rac-pn ligands in the quasi-one-dimensional bromo-bridged NiIII complexes, [Ni(pn)2Br]Br2 (pn=1,2-diaminopropane) afford similar STM patterns?

    Science.gov (United States)

    Wu, Hashen; Kawakami, Daisuke; Sasaki, Mari; Xie, Jimin; Takaishi, Shinya; Kajiwara, Takashi; Miyasaka, Hitoshi; Yamashita, Masahiro; Matsuzaki, Hiroyuki; Okamoto, Hiroshi

    2007-09-03

    The disordered patterns of R- and rac-1,2-diaminopropane (pn) in quasi-one-dimensional bromo-bridged Ni(III) complexes, [NiIII(pn)2Br]Br2, have been investigated by single-crystal X-ray structure determination and scanning tunneling microscopy (STM). X-ray structure determination shows that the methyl moieties are disordered on the right- and left-hand sides with half occupancies in both compounds, while the carbon atoms of the ethylene moieties of pn ligands are disordered in [Ni(rac-pn)2Br]Br2 and not disordered in [Ni(R-pn)2Br]Br2. In the STM images of both compounds, the bright spots are not straight but fluctuated with the similar patterns. We have concluded that tunnel current from the STM tip to metal ions are detected via methyl groups of pn ligands.

  4. n-p Short-Range Correlations from (p,2p+n) Measurements

    Science.gov (United States)

    Tang, A.; Watson, J. W.; Aclander, J.; Alster, J.; Asryan, G.; Averichev, Y.; Barton, D.; Baturin, V.; Bukhtoyarova, N.; Carroll, A.; Gushue, S.; Heppelmann, S.; Leksanov, A.; Makdisi, Y.; Malki, A.; Minina, E.; Navon, I.; Nicholson, H.; Ogawa, A.; Panebratsev, Yu.; Piasetzky, E.; Schetkovsky, A.; Shimanskiy, S.; Zhalov, D.

    2003-01-01

    We studied the 12C(p,2p+n) reaction at beam momenta of 5.9, 8.0, and 9.0 GeV/c. For quasielastic (p,2p) events pf, the momentum of the knocked-out proton before the reaction, was compared (event by event) with pn, the coincident neutron momentum. For |pn|>kF=0.220 GeV/c (the Fermi momentum) a strong back-to-back directional correlation between pf and pn was observed, indicative of short-range n-p correlations. From pn and pf we constructed the distributions of c.m. and relative motion in the longitudinal direction for correlated pairs. We also determined that 49±13% of events with |pf|>kF had directionally correlated neutrons with |pn|>kF.

  5. Effect of Varying Pnictogen Elements (Pn=N, P, As, Sb, Bi) on the Optoelectronic Properties of SrZn2Pn2

    Science.gov (United States)

    Murtaza, G.; Yousaf, N.; Laref, A.; Yaseen, M.

    2018-03-01

    Pnictogen-based Zintl compounds have fascinating properties. Nowadays these compounds have gained exceptional interest in thermoelectric and optoelectronic fields. Therefore, in this work the structural, electronic and optical properties of SrZn2Pn2 (Pn=N, P, As, Sb, Bi) compounds were studied using state-of-the-art density functional theory. The optimised lattice parameters (ɑ, c, c/ɑ and bond lengths) are consistent with the experimental results. The bulk moduli and c/a showed a decrease when changing the Pnictogen (Pn) anion from N to Bi in SrZn2Pn2 (Pn=N, P, As, Sb, Bi). The modified Becke-Johnson potential is used for band structure calculations. All compounds show semiconducting behaviour except SrZn2Bi2, which is metallic. Pn-p, Zn-d and Sr-d play an important role in defining the electronic structure of the compounds. The optical conductivity and absorption coefficient strength are high in visible and ultraviolet regions. These band structures and optical properties clearly show that SrZn2Pn2 compounds are potential candidates in the fields of optoelectronic and photonic devices.

  6. Low-fat, high-carbohydrate parenteral nutrition (PN) may potentially reverse liver disease in long-term PN-dependent infants

    DEFF Research Database (Denmark)

    Jakobsen, Marianne Skytte; Jørgensen, Marianne Hørby; Husby, Steffen

    2015-01-01

    INTRODUCTION: Parenteral nutrition-associated cholestasis (PNAC) is a complication of long-term parenteral nutrition (PN). Removal of lipids may reverse PNAC but compromises the energy to ensure infant growth. The purpose of this study was to test whether a low-fat, high-carbohydrate PN regimen......, which prevents and reverses PNAC in adults, could do the same in infants. This regimen could potentially avoid the problem of diminished energy input after removing nutritional lipids. METHODS: Infants developing PNAC over a 2-year period were started on a low-fat PN regimen with calories primarily from...

  7. Electrical/thermal transport and electronic structure of the binary cobalt pnictides CoPn2 (Pn = As and Sb

    Directory of Open Access Journals (Sweden)

    Yosuke Goto

    2015-06-01

    Full Text Available We demonstrate the electrical and thermal transport properties of polycrystalline CoPn2 (Pn = As and Sb between 300 and 900 K. CoAs2 shows semiconducting electrical transport up to 900 K, while CoSb2 exhibits degenerate conduction. Sign inversion of the Seebeck coefficient is observed at ∼310 and ∼400 K for CoAs2 and CoSb2, respectively. Thermal conductivity at 300 K is 11.7 Wm−1K−1 for CoAs2 and 9.4 Wm−1K−1 for CoSb2. The thermoelectric power factor of CoAs2 is ∼10 μWcm−1K−2, although the dimensionless figure of merit is limited to ∼0.1 due to relatively high thermal conductivity. Using electronic structure calculations, the band gap value is calculated to be 0.55 eV for CoAs2 and 0.26 eV for CoSb2.

  8. First tests with fully depleted PN-CCD's

    International Nuclear Information System (INIS)

    Strueder, L.; Lutz, G.; Sterzik, M.; Holl, P.; Kemmer, J.; Prechtel, U.; Ziemann, T.; Rehak, P.

    1987-01-01

    We have fabricated 280 μm thick fully depletable pn CCD's on high resistivity silicon (/rho/ ∼ 2.5 kΩcm). Its operation is based on the semiconductor drift chamber principle proposed by Gatti and Rheak. They are designed as energy and position sensitive radiation detector for (minimum) ionizing particles and X-ray imaging. Two dimensional semiconductor device modeling demonstrates the basic charge transer mechanisms. Prototypes of the detectors have been tested in static and dynamic conditions. A preliminary charge transfer inefficiency was determined to 6 x 10/sup/minus/3/. The charge loss during the transfer is discussed and as a consequence we have developed an improved design for a second fabrication iteration which is now being produced. 4 refs., 15 figs

  9. Nanofibrous p-n Junction and Its Rectifying Characteristics

    Directory of Open Access Journals (Sweden)

    Jian Fang

    2013-01-01

    Full Text Available Randomly oriented tin oxide (SnO2 nanofibers and poly(3,4-ethylenedioxythiophene-poly(styrenesulfonate/polyvinylpyrrolidone (PEDOT:PSS/PVP nanofibers were prepared by a two-step electrospinning technique to form a layered fibrous mat. The current-voltage measurement revealed that the fibrous mat had an obvious diode-rectifying characteristic. The thickness of the nanofiber layers was found to have a considerable influence on the device resistance and rectifying performance. Such an interesting rectifying property was attributed to the formation of a p-n junction between the fibrous SnO2 and PEDOT:PSS/PVP layers. This is the first report that a rectifying junction can be formed between two layers of electrospun nanofiber mats, and the resulting nanofibrous diode rectifier may find applications in sensors, energy harvest, and electronic textiles.

  10. Synthesis and structural characterization of the ternary Zintl phases AE3Al2Pn4 and AE3Ga2Pn4 (AE=Ca, Sr, Ba, Eu; Pn=P, As)

    International Nuclear Information System (INIS)

    He, Hua; Tyson, Chauntae; Saito, Maia; Bobev, Svilen

    2012-01-01

    Ten new ternary phosphides and arsenides with empirical formulae AE 3 Al 2 Pn 4 and AE 3 Ga 2 Pn 4 (AE=Ca, Sr, Ba, Eu; Pn=P, As) have been synthesized using molten Ga, Al, and Pb fluxes. They have been structurally characterized by single-crystal and powder X-ray diffraction to form with two different structures—Ca 3 Al 2 P 4 , Sr 3 Al 2 As 4 , Eu 3 Al 2 P 4 , Eu 3 Al 2 As 4 , Ca 3 Ga 2 P 4 , Sr 3 Ga 2 P 4 , Sr 3 Ga 2 As 4 , and Eu 3 Ga 2 As 4 crystallize with the Ca 3 Al 2 As 4 structure type (space group C2/c, Z=4); Ba 3 Al 2 P 4 and Ba 3 Al 2 As 4 adopt the Na 3 Fe 2 S 4 structure type (space group Pnma, Z=4). The polyanions in both structures are made up of TrPn 4 tetrahedra, which share common corners and edges to form 2 ∞ [TrPn 2 ] 3– layers in the phases with the Ca 3 Al 2 As 4 structure, and 1 ∞ [TrPn 2 ] 3– chains in Ba 3 Al 2 P 4 and Ba 3 Al 2 As 4 with the Na 3 Fe 2 S 4 structure type. The valence electron count for all of these compounds follows the Zintl–Klemm rules. Electronic band structure calculations confirm them to be semiconductors. - Graphical abstract: AE 3 Al 2 Pn 4 and AE 3 Ga 2 Pn 4 (AE=Ca, Sr, Ba, Eu; Pn=P, As) crystallize in two different structures—Ca 3 Al 2 P 4 , Sr 3 Al 2 As 4 , Eu 3 Al 2 P 4 , Eu 3 Al 2 As 4 , Ca 3 Ga 2 P 4 , Sr 3 Ga 2 P 4 , Sr 3 Ga 2 As 4 , and Eu 3 Ga 2 As 4 , are isotypic with the previously reported Ca 3 Al 2 As 4 (space group C2/c (No. 15)), while Ba 3 Al 2 P 4 and Ba 3 Al 2 As 4 adopt a different structure known for Na 3 Fe 2 S 4 (space group Pnma (No. 62). The polyanions in both structures are made up of TrPn 4 tetrahedra, which by sharing common corners and edges, form 2 ∞ [TrPn 2 ] 3– layers in the former and 1 ∞ [TrPn 2 ] 3– chains in Ba 3 Al 2 P 4 and Ba 3 Al 2 As 4 . Highlights: ► AE 3 Ga 2 Pn 4 (AE=Ca, Sr, Ba, Eu; Pn=P, As) are new ternary pnictides. ► Ba 3 Al 2 P 4 and Ba 3 Al 2 As 4 adopt the Na 3 Fe 2 S 4 structure type. ► The Sr- and Ca-compounds crystallize with the Ca 3

  11. Relativistic pn-QRPA to the double beta decay

    International Nuclear Information System (INIS)

    Conti, Claudio de; Krmpotic, F.; Carlson, Brett Vern

    2010-01-01

    Full text: In nature there are about 50 nuclear systems where the single beta-decay is energetically forbidden, and double- beta decay turns out to be only possible mode of disintegration. It is the nuclear pairing force which causes such an 'anomaly', by making the mass of the odd-odd isobar, (N - 1;Z + 1), to be greater than the masses of its even-even neighbors, (N;Z) and (N - 2;Z +2). The modes by which the double-beta decay can take place are connected with the neutrino and antineutrino distinction. In case the lepton number is strictly conserved the neutrino is a Dirac fermion and the two-neutrino mode is the only possible mode of disintegration. On the other hand, if this conservation is violated, the neutrino is a Majorana particle and neutrinoless double-beta decay also can occur. Both two-neutrino and neutrinoless double-beta decay processes have attracted much attention, because a comparison between experiment and theory for the first, provides a measure of confidence one may have in the nuclear wave function employed for extracting the unknown parameters from neutrinoless lifetime measurements. The proton-neutron (pn) quasiparticle random phase approximation (QRPA) has turned out be the most simple model for calculating the nuclear wave function involved in the double-beta decay transitions. In this work the transition matrix elements for 0 + -> 0 + double-beta decay are calculated for 48 Ca, 76 Ge, 82 Se, 100 Mo, 128 Te and 130 Te nuclei, using a relativistic pn-QRPA based on Hartree-Bogoliubov approximation to the single-particle motion. (author)

  12. Relativistic pn-QRPA to the double beta decay

    International Nuclear Information System (INIS)

    Conti, Claudio de; Krmpotic, Francisco; Carlson, Brett Vern

    2011-01-01

    Full text: In nature there are about 50 nuclear systems where the single beta-decay is energetically forbidden, and double-beta decay turns out to be only possible mode of disintegration. It is the nuclear pairing force which causes such an 'anomaly', by making the mass of the odd-odd isobar, (N - 1;Z + 1), to be greater than the masses of its even-even neighbors, (N;Z) and (N - 2;Z +2). The modes by which the double-beta decay can take place are connected with the neutrino and antineutrino distinction. In case the lepton number is strictly conserved the neutrino is a Dirac fermion and the two-neutrino mode is the only possible mode of disintegration. On the other hand, if this conservation is violated, the neutrino is a Majorana particle and neutrinoless double-beta decay also can occur. Both two-neutrino and neutrinoless double-beta decay processes have attracted much attention, because a comparison between experiment and theory for the first, provides a measure of confidence one may have in the nuclear wave function employed for extracting the unknown parameters from neutrinoless lifetime measurements. The proton-neutron (pn) quasiparticle random phase approximation (QRPA) has turned out be the most simple model for calculating the nuclear wave function involved in the double-beta decay transitions. In this work the transition matrix elements for 0 + → 0 + double-beta decay are calculated for 48 Ca, 76 Ge, 82 Se, 100 Mo, 128 Te and 130 Te nuclei, using a relativistic pn-QRPA based on Hartree-Bogoliubov approximation to the single-particle motion. (author)

  13. Naringenin (NAR) and 8-prenylnaringenin (8-PN) reduce the developmental competence of porcine oocytes in vitro

    NARCIS (Netherlands)

    Solak, Kamila A.; Santos, Regiane R.; van den Berg, Martin; Blaauboer, Bas J.; Roelen, Bernard A J; van Duursen, Majorie B M

    2014-01-01

    Flavanones such as naringenin (NAR) and 8-prenylnaringenin (8-PN) are increasingly used as dietary supplements despite scientific concern regarding adverse effects on female reproduction upon excessive intake. In the present study, NAR and 8-PN (0.3-1. μM) significantly affected porcine oocyte

  14. The empirical connection between (p,n) cross sections and beta decay transition strengths

    International Nuclear Information System (INIS)

    Taddeucci, T.N.

    1988-01-01

    A proportionality is assumed to exist between 0/degree/ (p,n) cross sections and the corresponding beta decay transition strengths. The validity of this assumption is tested by comparison of measured (p,n) cross sections and analogous beta decay strengths. Distorted waves impulse approximation calculations also provide useful estimates of the accuracy of the proportionality relationship. 14 refs., 10 figs

  15. A new class of PN3-pincer ligands for metal–ligand cooperative catalysis

    KAUST Repository

    Li, Huaifeng

    2014-12-01

    Work on a new class of PN3-pincer ligands for metal-ligand cooperative catalysis is reviewed. While the field of the pyridine-based PN3-transition metal pincer complexes is still relatively young, many important applications of these complexes have already emerged. In several cases, the PN3-pincer complexes for metal-ligand cooperative catalysis result in significantly improved or unprecedented activities. The synthesis and coordination chemistry of PN3-pincer ligands are briefly summarized first to cover the synthetic routes for their preparation, followed by a focus review on their applications in catalysis. A specific emphasis is placed on the later section about the role of PN3-pincer ligands\\' dearomatization-rearomatization steps during the catalytic cycles. The mechanistic insights from density functional theory (DFT) calculations are also discussed.

  16. A numerical model of p-n junctions bordering on surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Altermatt, P.P.; Aberle, A.G.; Jianhua Zhao; Aihua Wang; Heiser, G. [University of New South Wales, Sydney (Australia). Centre for Photovolatic Engineering

    2002-10-01

    Many solar cell structures contain regions where the emitter p-n junction borders on the surface. If the surface is not well passivated, a large amount of recombination occurs in such regions. This type of recombination is influenced by the electrostatics of both the p-n junction and the surface, and hence it is different from the commonly described recombination phenomena occurring in the p-n junction within the bulk. We developed a two-dimensional model for the recombination mechanisms occurring in emitter p-n junctions bordering on surfaces. The model is validated by reproducing the experimental I-V curves of specially designed silicon solar cells. It is shown under which circumstances a poor surface passivation, near where the p-n junction borders on the surface, reduces the fill factor and the open-circuit voltage. The model can be applied to many other types of solar cells. (author)

  17. A new class of PN3-pincer ligands for metal–ligand cooperative catalysis

    KAUST Repository

    Li, Huaifeng; Zheng, Bin; Huang, Kuo-Wei

    2014-01-01

    Work on a new class of PN3-pincer ligands for metal-ligand cooperative catalysis is reviewed. While the field of the pyridine-based PN3-transition metal pincer complexes is still relatively young, many important applications of these complexes have already emerged. In several cases, the PN3-pincer complexes for metal-ligand cooperative catalysis result in significantly improved or unprecedented activities. The synthesis and coordination chemistry of PN3-pincer ligands are briefly summarized first to cover the synthetic routes for their preparation, followed by a focus review on their applications in catalysis. A specific emphasis is placed on the later section about the role of PN3-pincer ligands' dearomatization-rearomatization steps during the catalytic cycles. The mechanistic insights from density functional theory (DFT) calculations are also discussed.

  18. Actinide-pnictide (An-Pn) bonds spanning non-metal, metalloid, and metal combinations (An=U, Th; Pn=P, As, Sb, Bi)

    Energy Technology Data Exchange (ETDEWEB)

    Rookes, Thomas M.; Wildman, Elizabeth P.; Gardner, Benedict M.; Wooles, Ashley J.; Gregson, Matthew; Tuna, Floriana; Liddle, Stephen T. [School of Chemistry, The University of Manchester (United Kingdom); Balazs, Gabor; Scheer, Manfred [Institute of Inorganic Chemistry, University of Regensburg (Germany)

    2018-01-26

    The synthesis and characterisation is presented of the compounds [An(Tren{sup DMBS}){Pn(SiMe_3)_2}] and [An(Tren{sup TIPS}){Pn(SiMe_3)_2}] [Tren{sup DMBS}=N(CH{sub 2}CH{sub 2}NSiMe{sub 2}Bu{sup t}){sub 3}, An=U, Pn=P, As, Sb, Bi; An=Th, Pn=P, As; Tren{sup TIPS}=N(CH{sub 2}CH{sub 2}NSiPr{sup i}{sub 3}){sub 3}, An=U, Pn=P, As, Sb; An=Th, Pn=P, As, Sb]. The U-Sb and Th-Sb moieties are unprecedented examples of any kind of An-Sb molecular bond, and the U-Bi bond is the first two-centre-two-electron (2c-2e) one. The Th-Bi combination was too unstable to isolate, underscoring the fragility of these linkages. However, the U-Bi complex is the heaviest 2c-2e pairing of two elements involving an actinide on a macroscopic scale under ambient conditions, and this is exceeded only by An-An pairings prepared under cryogenic matrix isolation conditions. Thermolysis and photolysis experiments suggest that the U-Pn bonds degrade by homolytic bond cleavage, whereas the more redox-robust thorium compounds engage in an acid-base/dehydrocoupling route. (copyright 2018 The Authors. Published by Wiley-VCH Verlag GmbH and Co. KGaA.)

  19. Nitrogen atom transfer mediated by a new PN3P-pincer nickel core via a putative nitrido nickel intermediate

    KAUST Repository

    Yao, Changguang

    2018-02-13

    A 2nd generation PN3P-pincer azido nickel complex (PN3P)Ni(N3) reacts with isocyanides to afford monosubstituted carbodiimides under irradiation, presumably via a transient nitrido intermediate. The resulting species can further generate unsymmetrical carboddimides and the PN3P nickel halide complex, accomplishing a synthetic cycle for a complete nitrogen atom transfer reaction.

  20. Nitrogen atom transfer mediated by a new PN3P-pincer nickel core via a putative nitrido nickel intermediate

    KAUST Repository

    Yao, Changguang; Wang, Xiufang; Huang, Kuo-Wei

    2018-01-01

    A 2nd generation PN3P-pincer azido nickel complex (PN3P)Ni(N3) reacts with isocyanides to afford monosubstituted carbodiimides under irradiation, presumably via a transient nitrido intermediate. The resulting species can further generate unsymmetrical carboddimides and the PN3P nickel halide complex, accomplishing a synthetic cycle for a complete nitrogen atom transfer reaction.

  1. Ternary CaCu4P2-type pnictides AAg4Pn2 (A=Sr, Eu; Pn=As, Sb)

    Science.gov (United States)

    Stoyko, Stanislav S.; Khatun, Mansura; Scott Mullen, C.; Mar, Arthur

    2012-08-01

    Four ternary pnictides AAg4Pn2 (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 °C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg4Pn2 adopt the trigonal CaCu4P2-type structure (Pearson symbol hR21, space group R3¯m, Z=3; a=4.5555(6) Å, c=24.041(3) Å for SrAg4As2; a=4.5352(2) Å, c=23.7221(11) Å for EuAg4As2; a=4.7404(4) Å, c=25.029(2) Å for SrAg4Sb2; a=4.7239(3) Å, c=24.689(2) Å for EuAg4Sb2), which can be derived from the trigonal CaAl2Si2-type structure of the isoelectronic zinc-containing pnictides AZn2Pn2 by insertion of additional Ag atoms into trigonal planar sites within [M2Pn2]2- slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg4As2 and SrAg4Sb2 revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals.

  2. Titanium-dioxide nanotube p-n homojunction diode

    Science.gov (United States)

    Alivov, Yahya; Ding, Yuchen; Singh, Vivek; Nagpal, Prashant

    2014-12-01

    Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO2) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO2 nanotubes p-n homojunction. This TiO2:N/TiO2:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of -5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.

  3. Titanium-dioxide nanotube p-n homojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Alivov, Yahya, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu; Ding, Yuchen; Singh, Vivek [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Nagpal, Prashant, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Renewable and Sustainable Energy Institute, University of Colorado Boulder, 2445 Kittredge Loop, Boulder, Colorado 80309 (United States)

    2014-12-29

    Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO{sub 2}) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO{sub 2} nanotubes p-n homojunction. This TiO{sub 2}:N/TiO{sub 2}:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of −5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.

  4. Physicochemical Characterization and Skin Permeation of Cationic Transfersomes Containing the Synthetic Peptide PnPP-19.

    Science.gov (United States)

    Almeida, Flavia De Marco; Silva, Carolina Nunes; de Araujo Lopes, Savia Caldeira; Santos, Daniel Moreira; Torres, Fernanda Silva; Cardoso, Felipe Lima; Martinelli, Patricia Massara; da Silva, Elizabeth Ribeiro; de Lima, Maria Elena; Miranda, Lucas Antonio Ferreira; Oliveira, Monica Cristina

    2018-01-08

    PnPP-19 is a 19-amino-acid synthetic peptide previously described as a novel drug for the treatment of erectile dysfunction. The aim of this work was to evaluate the physicochemical properties of cationic transfersomes containing PnPP-19 and the skin permeation of free PnPP-19 and PnPP-19-loaded transfersomes. Three different liposomal preparation methods were evaluated. Cationic transfersomes contained egg phosphatidyl choline: stearylamine (9:1 w/w) and Tween 20 (84.6:15.4 lipid:Tween, w/w). Lipid concentration varied from 20 to 40 mM. We evaluated the entrapment percentage, mean diameter, zeta potential and stability at 4 oC of the formulations. The skin permeation assays were performed with abdominal human skin using Franz diffusion cell with 3 cm2 diffusion area at 32 oC and a fluorescent derivative of the peptide, containing 5-TAMRA, bound to PnPP-19 C-terminal region, where an extra lysine was inserted. Our results showed variable entrapment efficiencies, from 6% to 30%, depending on the preparation method and the lipid concentration used. The reverse phase evaporation method using a total lipid concentration equal to 40 mM led to the best entrapment percentage (30.2 + 4.5%). Free PnPP-19 was able to permeate skin at a rate of 10.8 ng/cm2/h. However, PnPP-19 was specifically hydrolyzed by skin proteases, generating a fragment of 15 amino acid residues. Encapsulated PnPP-19 permeated the skin at a rate of 19.8 ng/cm2/h. The encapsulation of PnPP-19 in cationic transfersomes protected the peptide from degradation, favoring its topical administration. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  5. Solution-grown organic single-crystalline p-n junctions with ambipolar charge transport.

    Science.gov (United States)

    Fan, Congcheng; Zoombelt, Arjan P; Jiang, Hao; Fu, Weifei; Wu, Jiake; Yuan, Wentao; Wang, Yong; Li, Hanying; Chen, Hongzheng; Bao, Zhenan

    2013-10-25

    Organic single-crystalline p-n junctions are grown from mixed solutions. First, C60 crystals (n-type) form and, subsequently, C8-BTBT crystals (p-type) nucleate heterogeneously on the C60 crystals. Both crystals continue to grow simultaneously into single-crystalline p-n junctions that exhibit ambipolar charge transport characteristics. This work provides a platform to study organic single-crystalline p-n junctions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Magnetic electron focusing and tuning of the electron current with a pn-junction

    Energy Technology Data Exchange (ETDEWEB)

    Milovanović, S. P., E-mail: slavisa.milovanovic@uantwerpen.be; Ramezani Masir, M., E-mail: mrmphys@gmail.com; Peeters, F. M., E-mail: francois.peeters@uantwerpen.be [Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen (Belgium)

    2014-01-28

    Transverse magnetic focusing properties of graphene using a ballistic four terminal structure are investigated. The electric response is obtained using the semiclassical billiard model. The transmission exhibits pronounced peaks as a consequence of skipping orbits at the edge of the structure. When we add a pn-junction between the two probes, snake states along the pn-interface appear. Injected electrons are guided by the pn-interface to one of the leads depending on the value of the applied magnetic field. Oscillations in the resistance are found depending on the amount of particles that end up in each lead.

  7. Role of pn-pairs interaction in nuclear structure

    International Nuclear Information System (INIS)

    Nie, G.K.

    2004-01-01

    Full text: The nuclear structure approach is based on theory of interaction of pn-pairs with suggestion that proton and neutron of one pair have the same nuclear potential. In frame of this model nuclei with N=Z were analyzed in [1,2]. In [1] radii of position of last proton were estimated on difference of proton and neutron separation energies. In [2] a phenomenological formula for calculation of binding energy of alpha- cluster nuclei was found. Present work is devoted to developing the nuclear structure model. Coulomb energy of nuclei with N=Z has been found from sum of differences of separation energies of protons and neutrons belonging to one pairs. From analysis of nuclei 12 C and 16 O the value of energy of Coulomb repulsion between 2 α -clusters has been estimated equal to ε C α =1.925 MeV [3], which means that value of nuclear (meson) interaction between 2 α -clusters is expected to be ε m αα = ε cov αα + ε C α =4.350 MeV. From suggestion that energy of long range Coulomb repulsion is compensated by surface tension energy an equation has been found to calculate radius of position of last proton on value of Z. Charge radii of nuclei from 58 Ni to 208 Bi and further have been calculated with difference from experimental ones in several hundredths of fm. In the approach binding energy of excess neutrons stays beyond the consideration. Therefore, in calculation of binding energies of nuclei the experimental values of separation energies of excess neutrons are used. There is a good agreement between calculated values of binding energies of some isotopes of all known elements as well as separation energies of alpha particle and deuteron and experimental data. The difference from experimental binding energy in most of the cases is about 0.5% and less

  8. Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

    Energy Technology Data Exchange (ETDEWEB)

    Imtiaz, Atif [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel, E-mail: kabos@boulder.nist.gov [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Weber, Joel C. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Coakley, Kevin J. [Information Technology Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)

    2014-06-30

    We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ′}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ′}  effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ′} images.

  9. Evidence of mesoniums in anti pn annihilations and γγ reactions

    International Nuclear Information System (INIS)

    Liu, K.F.; Li, B.A.

    1987-01-01

    A new resonance at 1480 MeV with a width of 110 MeV is found in anti pn annihilations in the channel anti pn → π - X 0 (1480) → π - ρ 0 ρ 0 . Its mass, width and spin-parity are shown to be consistent with the ρ 0 ρ 0 enhancement observed in γγ reactions. Together with the suppression in the γγ → ρ + ρ - data which requires the admixture of an isotensor structure, this ρ 0 ρ 0 resonance in anti pn annihilation and γγ reactions and their small ππ branching ratios represent the best evidence yet for the Q 2 Q-bar 2 nature of the mesoniums. A ρ - ρ - resonance in anti pn annihilations which would betray the exotic isotensor nature of the resonance is predicted. (author)

  10. PnET-BGC: Modeling Biogeochemical Processes in a Northern Hardwood Forest Ecosystem

    Data.gov (United States)

    National Aeronautics and Space Administration — This archived model product contains the directions, executables, and procedures for running PnET-BGC to recreate the results of: Gbondo-Tugbawa, S.S., C.T. Driscoll...

  11. PnET-BGC: Modeling Biogeochemical Processes in a Northern Hardwood Forest Ecosystem

    Data.gov (United States)

    National Aeronautics and Space Administration — ABSTRACT: This archived model product contains the directions, executables, and procedures for running PnET-BGC to recreate the results of: Gbondo-Tugbawa, S.S.,...

  12. Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers

    National Research Council Canada - National Science Library

    Neudeck, Philip

    1998-01-01

    ...-suited SiC polytype for power device implementation. This paper reports the first experimental measurements of stable positive temperature coefficient behavior observed in 4H-SiC pn junction rectifiers...

  13. High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

    Directory of Open Access Journals (Sweden)

    Graham Trevor Reed

    2014-12-01

    Full Text Available This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

  14. Homojunction p-n photodiodes based on As-doped single ZnO nanowire

    International Nuclear Information System (INIS)

    Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

    2013-01-01

    Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices

  15. On P2 ⋄ Pn -supermagic labeling of edge corona product of cycle and path graph

    Science.gov (United States)

    Yulianto, R.; Martini, Titin S.

    2018-04-01

    A simple graph G = (V, E) admits a H-covering, where H is subgraph of G, if every edge in E belongs to a subgraph of G isomorphic to H. Graph G is H-magic if there is a total labeling f:V(G)\\cup E(G)\\to 1,2,\\ldots,|V(G)|+|E(G)|, such that each subgraph {H}{\\prime }=({V}{\\prime },{E}{\\prime }) of G isomorphic to H and satisfying f{({H}{\\prime })}=def{\\sum }\\upsilon \\in {V{\\prime }}f(\\upsilon )+{\\sum }e\\in {E{\\prime }}f(e)=m(f) where m(f) is a constant magic sum. Additionaly, G admits H-supermagic if f(V)=1,2,\\ldots,|V|. The edge corona {C}n \\diamond {P}n of Cn and Pn is defined as the graph obtained by taking one copy of Cn and n copies of Pn , and then joining two end-vertices of the i-th edge of Cn to every vertex in the i-th copy of Pn . This research aim is to find H-supermagic covering on an edge corona product of cycle and path graph {C}n \\diamond {P}n where H is {P}2 \\diamond {P}n. We use k-balanced multiset to solve our reserarch. Here, we find that an edge corona product of cycle and path graph {C}n \\diamond {P}n is {P}2 \\diamond {P}n supermagic for n > 3.

  16. Effects of adding butyric acid to PN on gut-associated lymphoid tissue and mucosal immunoglobulin A levels.

    Science.gov (United States)

    Murakoshi, Satoshi; Fukatsu, Kazuhiko; Omata, Jiro; Moriya, Tomoyuki; Noguchi, Midori; Saitoh, Daizoh; Koyama, Isamu

    2011-07-01

    Parenteral nutrition (PN) causes intestinal mucosal atrophy, gut-associated lymphoid tissue (GALT) atrophy and dysfunction, leading to impaired mucosal immunity and increased susceptibility to infectious complications. Therefore, new PN formulations are needed to maintain mucosal immunity. Short-chain fatty acids have been demonstrated to exert beneficial effects on the intestinal mucosa. We examined the effects of adding butyric acid to PN on GALT lymphocyte numbers, phenotypes, mucosal immunoglobulin A (IgA) levels, and intestinal morphology in mice. Male Institute of Cancer Research mice (n = 103) were randomized to receive either standard PN (S-PN), butyric acid-supplemented PN (Bu-PN), or ad libitum chow (control) groups. The mice were fed these respective diets for 5 days. In experiment 1, cells were isolated from Peyer's patches (PPs) to determine lymphocyte numbers and phenotypes (αβTCR(+), γδTCR(+), CD4(+), CD8(+), B220(+) cells). IgA levels in small intestinal washings were also measured. In experiment 2, IgA levels in respiratory tract (bronchoalveolar and nasal) washings were measured. In experiment 3, small intestinal morphology was evaluated. Lymphocyte yields from PPs and small intestinal, bronchoalveolar, and nasal washing IgA levels were all significantly lower in the S-PN group than in the control group. Bu-PN moderately, but significantly, restored PP lymphocyte numbers, as well as intestinal and bronchoalveolar IgA levels, as compared with S-PN. Villous height and crypt depth in the small intestine were significantly decreased in the S-PN group vs the control group, however Bu-PN restored intestinal morphology. A new PN formula containing butyric acid is feasible and would ameliorate PN-induced impairment of mucosal immunity.

  17. Excitation functions of the (pn) and (p,2n) reactions on Cd isotopes. [(pn) and (p,2n) reactions on the sup(110-114,116)Cd

    Energy Technology Data Exchange (ETDEWEB)

    Skakun, E A; Klyucharev, A P; Rakivnenko, Yu N; Romanij, I A [AN Ukrainskoi SSR, Kiev. Fiziko-Tekhnicheskii Inst.

    1975-01-01

    Excitation functions of (pn)- and (p,2n)-reactions on /sup 110/-/sup 114/,/sup 116/Cd nuclei are measured in a range of incident proton energy up to 20 MeV. Experimental results are compared to calculated ones.

  18. The Outcome for Patients With Pathologic Node-Positive Prostate Cancer Treated With Intensity Modulated Radiation Therapy and Androgen Deprivation Therapy: A Case-Matched Analysis of pN1 and pN0 Patients

    Energy Technology Data Exchange (ETDEWEB)

    Van Hemelryk, Annelies [Department of Urology, Ghent University Hospital, Ghent (Belgium); De Meerleer, Gert; Ost, Piet [Department of Radiation Oncology, Ghent University Hospital, Ghent (Belgium); Poelaert, Filip [Department of Urology, Ghent University Hospital, Ghent (Belgium); De Gersem, Werner [Department of Radiation Oncology, Ghent University Hospital, Ghent (Belgium); Decaestecker, Karel [Department of Urology, Ghent University Hospital, Ghent (Belgium); De Visschere, Pieter [Department of Radiology, Ghent University Hospital, Ghent (Belgium); Fonteyne, Valérie, E-mail: valerie.fonteyne@uzgent.be [Department of Radiation Oncology, Ghent University Hospital, Ghent (Belgium)

    2016-10-01

    Purpose: Improved outcome is reported after surgery or external beam radiation therapy (EBRT) plus androgen deprivation therapy (ADT) for patients with lymph node (LN) positive (N1) prostate cancer (PC). Surgical series have shown that pathologic (p)N1 PC does not behave the same in all patients. The aim of this study was to perform a matched-case analysis to compare the outcome of pN1 and pN0 PC after high-dose EBRT plus ADT. Methods and Materials: Radiation therapy up to 80 Gy was delivered to the prostate with a minimal dose of 45 Gy to the pelvis for pN1 patients. After matching, Kaplan-Meier statistics were used to compare the 5-year biochemical and clinical relapse-free survival (bRFS and cRFS), prostate cancer–specific survival (PCSS), and overall survival (OS). Acute and late rectal and urinary toxicity was evaluated. Results: Sixty-nine pN1 PC patients were matched 1:1 with pN0 PC patients. The median follow-up time was 60 months. The 5-year bRFS and cRFS for pN1 versus pN0 PC patients were 65% ± 7% versus 79% ± 5% (P=.08) and 70% ± 6% versus 83% ± 5% (P=.04) respectively. No significant difference was found in bRFS or cRFS rates between low volume pN1 (≤2 positive LNs) and pN0 patients. The 5-year PCSS and OS were comparable between pN1 and pN0 PC patients: PCSS: 92% ± 4% versus 93% ± 3% (P=.66); OS: 82% ± 5% versus 80% ± 5% (P=.58). Severe toxicity was rare for both groups, although pN1 patients experienced significantly more acute grade 2 rectal toxicity. Conclusion: Primary EBRT plus 2 to 3 years of ADT is a legitimate treatment option for pN1 PC patients, especially those with ≤2 positive LNs, and this with bRFS and cRFS rates comparable to those in pN0 PC patients. For pN1 PC patients with >2 positive LNs, bRFS and cRFS are worse than in pN0 patients, but even in this subgroup, long-term disease control is obtained.

  19. The Outcome for Patients With Pathologic Node-Positive Prostate Cancer Treated With Intensity Modulated Radiation Therapy and Androgen Deprivation Therapy: A Case-Matched Analysis of pN1 and pN0 Patients

    International Nuclear Information System (INIS)

    Van Hemelryk, Annelies; De Meerleer, Gert; Ost, Piet; Poelaert, Filip; De Gersem, Werner; Decaestecker, Karel; De Visschere, Pieter; Fonteyne, Valérie

    2016-01-01

    Purpose: Improved outcome is reported after surgery or external beam radiation therapy (EBRT) plus androgen deprivation therapy (ADT) for patients with lymph node (LN) positive (N1) prostate cancer (PC). Surgical series have shown that pathologic (p)N1 PC does not behave the same in all patients. The aim of this study was to perform a matched-case analysis to compare the outcome of pN1 and pN0 PC after high-dose EBRT plus ADT. Methods and Materials: Radiation therapy up to 80 Gy was delivered to the prostate with a minimal dose of 45 Gy to the pelvis for pN1 patients. After matching, Kaplan-Meier statistics were used to compare the 5-year biochemical and clinical relapse-free survival (bRFS and cRFS), prostate cancer–specific survival (PCSS), and overall survival (OS). Acute and late rectal and urinary toxicity was evaluated. Results: Sixty-nine pN1 PC patients were matched 1:1 with pN0 PC patients. The median follow-up time was 60 months. The 5-year bRFS and cRFS for pN1 versus pN0 PC patients were 65% ± 7% versus 79% ± 5% (P=.08) and 70% ± 6% versus 83% ± 5% (P=.04) respectively. No significant difference was found in bRFS or cRFS rates between low volume pN1 (≤2 positive LNs) and pN0 patients. The 5-year PCSS and OS were comparable between pN1 and pN0 PC patients: PCSS: 92% ± 4% versus 93% ± 3% (P=.66); OS: 82% ± 5% versus 80% ± 5% (P=.58). Severe toxicity was rare for both groups, although pN1 patients experienced significantly more acute grade 2 rectal toxicity. Conclusion: Primary EBRT plus 2 to 3 years of ADT is a legitimate treatment option for pN1 PC patients, especially those with ≤2 positive LNs, and this with bRFS and cRFS rates comparable to those in pN0 PC patients. For pN1 PC patients with >2 positive LNs, bRFS and cRFS are worse than in pN0 patients, but even in this subgroup, long-term disease control is obtained.

  20. Synthesis and structural characterization of the Zintl phases Na{sub 3}Ca{sub 3}TrPn{sub 4}, Na{sub 3}Sr{sub 3}TrPn{sub 4}, and Na{sub 3}Eu{sub 3}TrPn{sub 4} (Tr=Al, Ga, In; Pn=P, As, Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); Suen, Nian-Tzu [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002 (China); Kunene, Thabiso; Stoyko, Stanislav [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States)

    2017-05-15

    15 new quaternary Zintl phases have been synthesized by solid-state reactions from the respective elements, and their structures have been determined by single-crystal X-ray diffraction. Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) crystallize in the hexagonal crystal system with the non-centrosymmetric space group P6{sub 3}mc (No. 186). The structure represents a variant of the K{sub 6}HgS{sub 4} structure type (Pearson index hP22) and features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. The nominal formula rationalization [Na{sup +}]{sub 3}[E{sup 2+}]{sub 3}[TrPn{sub 4}]{sup 9–} follows the octet rule, suggesting closed-shell configurations for all atoms and intrinsic semiconducting behavior. However, structure refinements for several members hint at disorder and mixing of cations that potentially counteract the optimal valence electron count. - Graphical abstract: The hexagonal, non-centrosymmetric structure of Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. - Highlights: • 15 quaternary phosphides, arsenides, and antimonides are synthesized and structurally characterized. • The structure is a variant of the hexagonal K{sub 6}HgS{sub 4}-type, with distinctive pattern for the cations. • Occupational and/or positional disorder of yet unknown origin exists for some members of the series.

  1. pnCCD for photon detection from near-infrared to X-rays

    International Nuclear Information System (INIS)

    Meidinger, Norbert; Andritschke, Robert; Hartmann, Robert; Herrmann, Sven; Holl, Peter; Lutz, Gerhard; Strueder, Lothar

    2006-01-01

    A pnCCD is a special type of charge-coupled device developed for spectroscopy and imaging of X-rays with high time resolution and quantum efficiency. Its most famous application is the operation on the XMM-Newton satellite, an X-ray astronomy mission that was launched by the European space agency in 1999. The excellent performance of the focal plane camera has been maintained for more than 6 years in orbit. The energy resolution in particular has shown hardly any degradation since launch. In order to satisfy the requirements of future X-ray astronomy missions as well as those of ground-based experiments, a new type of pnCCD has been developed. This 'frame-store pnCCD' shows an enhanced performance compared to the XMM-Newton type of pnCCD. Now, more options in device design and operation are available to tailor the detector to its respective application. Part of this concept is a programmable analog signal processor, which has been developed for the readout of the CCD signals. The electronic noise of the new detector has a value of only 2 electrons equivalent noise charge (ENC), which is less than half of the figure achieved for the XMM-Newton-type pnCCD. The energy resolution for the Mn-K α line at 5.9 keV is approximately 130 eV FWHM. We have close to 100% quantum efficiency for both low- and high-energy photon detection (e.g. the C-K line at 277 eV, and the Ge-K α line at 10 keV, respectively). Very high frame rates of 1000 images/s have been achieved due to the ultra-fast readout accomplished by the parallel architecture of the pnCCD and the analog signal processor. Excellent spectroscopic performance is shown even at the relatively high operating temperature of -25 deg. C that can be achieved by a Peltier cooler. The applications of the low-noise and fast pnCCD detector are not limited to the detection of X-rays. With an anti-reflective coating deposited on the photon entrance window, we achieve high quantum efficiency also for near-infrared and optical

  2. Bootstrap inversion for Pn wave velocity in North-Western Italy

    Directory of Open Access Journals (Sweden)

    C. Eva

    1997-06-01

    Full Text Available An inversion of Pn arrival times from regional distance earthquakes (180-800 km, recorded by 94 seismic stations operating in North-Western Italy and surrounding areas, was carried out to image lateral variations of P-wave velocity at the crust-mantle boundary, and to estimate the static delay time at each station. The reliability of the obtained results was assessed using both synthetic tests and the bootstrap Monte Carlo resampling technique. Numerical simulations demonstrated the existence of a trade-off between cell velocities and estimated station delay times along the edge of the model. Bootstrap inversions were carried out to determine the standard deviation of velocities and time terms. Low Pn velocity anomalies are detected beneath the outer side of the Alps (-6% and the Western Po plain (-4% in correspondence with two regions of strong crustal thickening and negative Bouguer anomaly. In contrast, high Pn velocities are imaged beneath the inner side of the Alps (+4% indicating the presence of high velocity and density lower crust-upper mantle. The Ligurian sea shows high Pn velocities close to the Ligurian coastlines (+3% and low Pn velocities (-1.5% in the middle of the basin in agreement with the upper mantle velocity structure revealed by seismic refraction profiles.

  3. Ternary CaCu4P2-type pnictides AAg4Pn2 (A=Sr, Eu; Pn=As, Sb)

    International Nuclear Information System (INIS)

    Stoyko, Stanislav S.; Khatun, Mansura; Scott Mullen, C.; Mar, Arthur

    2012-01-01

    Four ternary pnictides AAg 4 Pn 2 (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 °C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg 4 Pn 2 adopt the trigonal CaCu 4 P 2 -type structure (Pearson symbol hR21, space group R3-bar m, Z=3; a=4.5555(6) Å, c=24.041(3) Å for SrAg 4 As 2 ; a=4.5352(2) Å, c=23.7221(11) Å for EuAg 4 As 2 ; a=4.7404(4) Å, c=25.029(2) Å for SrAg 4 Sb 2 ; a=4.7239(3) Å, c=24.689(2) Å for EuAg 4 Sb 2 ), which can be derived from the trigonal CaAl 2 Si 2 -type structure of the isoelectronic zinc-containing pnictides AZn 2 Pn 2 by insertion of additional Ag atoms into trigonal planar sites within [M 2 Pn 2 ] 2− slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg 4 As 2 and SrAg 4 Sb 2 revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals. - Graphical abstract: SrAg 4 As 2 and related pnictides adopt a CaCu 4 P 2 -type structure in which additional Ag atoms enter trigonal planar sites within slabs built from edge-sharing tetrahedra. Highlights: ► AAg 4 Pn 2 are the first Ag-containing members of the CaCu 4 P 2 -type structure. ► Ag atoms are stuffed in trigonal planar sites within CaAl 2 Si 2 -type slabs. ► Ag–Ag bonding develops through attractive d 10 –d 10 interactions.

  4. Ternary CaCu{sub 4}P{sub 2}-type pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Stoyko, Stanislav S.; Khatun, Mansura; Scott Mullen, C. [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada); Mar, Arthur, E-mail: arthur.mar@ualberta.ca [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada)

    2012-08-15

    Four ternary pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 Degree-Sign C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg{sub 4}Pn{sub 2} adopt the trigonal CaCu{sub 4}P{sub 2}-type structure (Pearson symbol hR21, space group R3-bar m, Z=3; a=4.5555(6) A, c=24.041(3) A for SrAg{sub 4}As{sub 2}; a=4.5352(2) A, c=23.7221(11) A for EuAg{sub 4}As{sub 2}; a=4.7404(4) A, c=25.029(2) A for SrAg{sub 4}Sb{sub 2}; a=4.7239(3) A, c=24.689(2) A for EuAg{sub 4}Sb{sub 2}), which can be derived from the trigonal CaAl{sub 2}Si{sub 2}-type structure of the isoelectronic zinc-containing pnictides AZn{sub 2}Pn{sub 2} by insertion of additional Ag atoms into trigonal planar sites within [M{sub 2}Pn{sub 2}]{sup 2-} slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg{sub 4}As{sub 2} and SrAg{sub 4}Sb{sub 2} revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals. - Graphical abstract: SrAg{sub 4}As{sub 2} and related pnictides adopt a CaCu{sub 4}P{sub 2}-type structure in which additional Ag atoms enter trigonal planar sites within slabs built from edge-sharing tetrahedra. Highlights: Black-Right-Pointing-Pointer AAg{sub 4}Pn{sub 2} are the first Ag-containing members of the CaCu{sub 4}P{sub 2}-type structure. Black-Right-Pointing-Pointer Ag atoms are stuffed in trigonal planar sites within CaAl{sub 2}Si{sub 2}-type slabs. Black-Right-Pointing-Pointer Ag-Ag bonding develops through attractive d{sup 10}-d{sup 10} interactions.

  5. The ZnO p-n homojunctions modulated by ZnMgO barriers

    International Nuclear Information System (INIS)

    Yang, Jing-Jing; Fang, Qing-Qing; Wang, Dan-Dan; Du, Wen-Han

    2015-01-01

    In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB). The ADB p-n homojunctions displays step-like curve in the absorption spectrums, this is the first time that quantum confinement effect has been observed in the absorption spectrums at room temperature (RT). The Hall-effect data confirm there is 2-dimensional electron gas in the interface of the ZnMgO ADB p-n junctions. The quantum confinement effect enhances the hall-mobility μ to 10 3 cm 2 V −1 s −1 based on the polarity of the films. There was no rectification property in the ZnO homojunctions with thickness of 250nm, however, when the ADB was added in the n-type layer of the homojunctions, it displays a typical Zener diode rectification property in the I-V curve

  6. Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy

    International Nuclear Information System (INIS)

    Nowak, Roland; Moraru, Daniel; Mizuno, Takeshi; Jablonski, Ryszard; Tabe, Michiharu

    2014-01-01

    Nanoscale pn junctions have been investigated by Kelvin probe force microscopy and several particular features were found. Within the depletion region, a localized noise area is observed, induced by temporal fluctuations of dopant states. Electronic potential landscape is significantly affected by dopants with ground-state energies deeper than in bulk. Finally, the effects of light illumination were studied and it was found that the depletion region shifts its position as a function of light intensity. This is ascribed to charge redistribution within the pn junction as a result of photovoltaic effect and due to the impact of deepened-level dopants. - Highlights: • In pn nano-junctions, temporal potential fluctuations are found in depletion layer. • Fluctuations are due to frequent capture and emission of free carriers by dopants. • Depletion layer position shifts as a function of the intensity of irradiated light. • The depletion layer shifts are due to changes of deep-level dopants' charge states

  7. Dynamic SPECT of the brain using a lipophilic technetium-99m complex, PnAO

    DEFF Research Database (Denmark)

    Holm, S; Andersen, A R; Vorstrup, S

    1985-01-01

    m PnAO was injected i.v. as a bolus of 15 to 25 mCi. The distribution was followed over 10-sec intervals using a highly sensitive, rapidly rotating SPECT (Tomomatic 64) and compared to 133Xe flow maps. Upon arrival of the PnAO bolus to the brain, a high uptake was found in brain tissue with high......The lipophilic 99mTc-labeled oxime propylene amine oxime (PnAO) should, according to recent reports behave like 133Xe in the human brain. This study compares SPECT images of the two tracers in six subjects: four stroke cases, one transitory ischemic attack case and one normal subject. Technetium-99......AO has a high yet incomplete brain extraction yielding a flow dominated initial distribution with limitations mentioned....

  8. Two-dimensional dopant profiling of gallium nitride p-n junctions by scanning capacitance microscopy

    Science.gov (United States)

    Lamhamdi, M.; Cayrel, F.; Frayssinet, E.; Bazin, A. E.; Yvon, A.; Collard, E.; Cordier, Y.; Alquier, D.

    2016-04-01

    Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging task since it needs a technique with simultaneously good sensitivity, high spatial resolution and high dopant gradient resolution. To face these challenges, scanning capacitance microscopy combined with Atomic Force Microscopy is a good candidate, presenting reproducible results, as demonstrated in literature. In this work, we attempt to distinguish reliably and qualitatively the various doping concentrations and type at p-n and unipolar junctions. For both p-n and unipolar junctions three kinds of samples were prepared and measured separately. The space-charge region of the p-n metallurgical junction, giving rise to different contrasts under SCM imaging, is clearly observed, enlightening the interest of the SCM technique.

  9. Epitaxial Growth of an Organic p-n Heterojunction: C60 on Single-Crystal Pentacene.

    Science.gov (United States)

    Nakayama, Yasuo; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Tsuruta, Ryohei; Hinderhofer, Alexander; Gerlach, Alexander; Broch, Katharina; Belova, Valentina; Frank, Heiko; Yamamoto, Masayuki; Niederhausen, Jens; Glowatzki, Hendrik; Rabe, Jürgen P; Koch, Norbert; Ishii, Hisao; Schreiber, Frank; Ueno, Nobuo

    2016-06-01

    Designing molecular p-n heterojunction structures, i.e., electron donor-acceptor contacts, is one of the central challenges for further development of organic electronic devices. In the present study, a well-defined p-n heterojunction of two representative molecular semiconductors, pentacene and C60, formed on the single-crystal surface of pentacene is precisely investigated in terms of its growth behavior and crystallographic structure. C60 assembles into a (111)-oriented face-centered-cubic crystal structure with a specific epitaxial orientation on the (001) surface of the pentacene single crystal. The present experimental findings provide molecular scale insights into the formation mechanisms of the organic p-n heterojunction through an accurate structural analysis of the single-crystalline molecular contact.

  10. Pn seismic wave travel time at the Semipalatinsk Test Site - Borovoe seismic station trace

    International Nuclear Information System (INIS)

    An, V.A.; Kaazik, P.B.; Ovchinnikov, V.M.

    2001-01-01

    This paper preparation involved 160 explosions at the Degelen Site conducted in 1961-1989 and 89 explosions at the Balapan Site conducted in 1968-1989. Pn wave travel time was tied to the sea level in accordance with velocity characteristics of the explosion hypocenter medium; and to average epicentral distance for every site basing on their local travel time curves of Pn wave relative to Borovoe station. Maximum amplitude of mean-year travel times variations is 0.3-0.5 s as at the Nevada Test Site - Borovoe trace and Mirniy (Antarctica). However, the linear trend in contrast to previous traces has negative sign (0.08 s for Degelen and 0.1 s for Balapan). Thus, Pn wave velocity increases with calendar time. (author)

  11. Electronic structure and transport properties of Ba2Cd2Pn3 (Pn = As and Sb): An efficient materials for energy conversion

    International Nuclear Information System (INIS)

    Reshak, A.H.

    2016-01-01

    The full potential method within the recently modified Becke-Johnson potential explore that the Ba 2 Cd 2 Pn 3 (Pn = As and Sb) compounds are narrow band gap semiconductors of about 0.49 and 0.32 eV, which confute the finding of the previous TB-LMTO-ASA calculation that Ba 2 Cd 2 Sb 3 is a poor metal. It has been found that there are subtle difference in band desperations of the two compounds, resulting in significant influence on the electronic and transport properties, taking into account the size and the electro-negativity differences between As and Sb atoms. Calculation show that there exists a strong hybridization between the orbitals which may lead to form covalent bonding which is more favorable for the transport of the carriers than ionic one. The electronic structure, the anisotropy and the inter-atomic interactions are further analyzed by calculating the valence electronic charge density distribution in two crystallographic planes. The semi-classical Boltzmann theory as incorporated in BoltzTraP code was used to calculate the transport properties of Ba 2 Cd 2 As 3 and Ba 2 Cd 2 Sb 3 at different temperatures and chemical potentials to ascertain the influence of temperatures and substituting As by Sb on the transport properties. The carries mobility decreases with increasing the temperature also with increasing the carriers concentration. We have observed that substituting As by Sb lead to increase the carries mobility of Ba 2 Cd 2 Sb 3 along the whole temperature interval and the carries concentration range. It has been found that Ba 2 Cd 2 As 3 exhibit higher carriers concentration, electronic electrical conductivity and Seebeck coefficient than that of Ba 2 Cd 2 Sb 3 along the investigated temperature range. The highest value of Seebeck coefficient occurs at 300 K, which show good agreement with the experimental data. The power factor increases linearly with increasing the temperature and Ba 2 Cd 2 As 3 exhibit a bit higher power factor than that of Ba

  12. New Pn and Sn tomographic images of the uppermost mantle beneath the Mediterranean region

    Science.gov (United States)

    Gil, A.; Díaz, J.; Gallart, J.

    2012-04-01

    We present here new images of the seismic velocity and anisotropy variations in the uppermost mantle beneath the Mediterranean region, compiled from inversion of Pn and Sn phases. The method of Hearn (1996) has been applied to Pn and Sn lectures from the catalogs of the International Seismological Center and the Spanish Instituto Geografico Nacional. A total of 1,172,293 Pn arrivals coming from 16,527 earthquakes recorded at 1,657 stations with epicentral distances between 220 km and 1400 km have been retained (331,567 arrivals from 15,487events at 961 stations for Sn). Our results, grossly consistent with available 3D tomography images, show significant features well correlated with surface geology. The Pn velocities are high (>8.2 km/s) beneath major sedimentary basins (western Alboran Sea, Valencia Trough, Adriatic Sea, Aquitaine, Guadalquivir, Rharb, Aquitaine and Po basins), and low (Islands, probably related to a thermal anomaly associated to the westward displacement of the Alboran block along the Emile Baudot escarpment 16 Ma ago. The Pn anisotropic image shows consistent orientations sub-parallel to major orogenic structures, such as Betics, Apennines, Calabrian Arc and Alps. The station delays beneath Betic and Rif ranges are strongly negative, suggesting the presence of crustal thickening all along the Gibraltar Arc. However, only the Betics have a very strong low-velocity anomaly and a pronounced anisotropy pattern. The Sn tomographic image correlates well with the Pn image, even if some relevant differences can be observed beneath particular regions.

  13. Characterization of a pnCCD for applications with synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Send, S., E-mail: send@physik.uni-siegen.de [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany); Abboud, A. [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany); Hartmann, R.; Huth, M. [PNSensor GmbH, Römerstraße 28, 80803 München (Germany); Leitenberger, W. [University of Potsdam, Department of Physics, Karl-Liebknecht-Straße 24/25, 14476 Potsdam (Germany); Pashniak, N. [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany); Schmidt, J. [PNSensor GmbH, Römerstraße 28, 80803 München (Germany); Strüder, L. [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany); PNSensor GmbH, Römerstraße 28, 80803 München (Germany); Max-Planck-Institut für extraterrestrische Physik, Giessenbachstraße, 85748 Garching (Germany); Pietsch, U. [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany)

    2013-05-21

    In this work we study the response of a pnCCD by means of X-ray spectroscopy in the energy range between 6 keV and 20 keV and by Laue diffraction techniques. The analyses include measurements of characteristic detector parameters like energy resolution, count rate capability and effects of different gain settings. The limit of a single photon counting operation in white beam X-ray diffraction experiments is discussed with regard to the occurrence of pile-up events, for which the energy information about individual photons is lost. In case of monochromatic illumination the pnCCD can be used as a fast conventional CCD with a charge handling capacity (CHC) of about 300,000 electrons per pixel. If the CHC is exceeded, any surplus charge will spill to neighboring pixels perpendicular to the transfer direction due to electrostatic repulsion. The possibilities of increasing the number of storable electrons are investigated for different voltage settings by exposing a single pixel with X-rays generated by a microfocus X-ray source. The pixel binning mode is tested as an alternative approach that enables a pnCCD operation with significantly shorter readout times. -- Highlights: ► The pnCCD acts as a four-dimensional detector for white X-rays. ► Its performance for applications with synchrotron radiation is investigated. ► The pnCCD can be used for single photon counting and photon integration. ► The operation mode depends on the local frequencies of pile-up events. ► The pnCCD can be optimized for X-ray spectroscopy and X-ray imaging.

  14. Theoretical study on pp → pnπ+ reaction at medium energies

    International Nuclear Information System (INIS)

    Ouyang, Zhen; Xie, Jujun; Zou, Bingsong; Xu, Hushan

    2009-01-01

    The pp → pnπ + reaction is a channel with the largest total cross section for pp collision in COSY/CSR energy region. In this work, we investigate individual contributions from various N* and Δ* resonances with mass up to about 2 GeV for the pp → pnπ + reaction. We extend a resonance model, which can reproduce the observed total cross section quite well, to give theoretical predictions of various differential cross sections for the present reaction at T p = 2.88 GeV. It could serve as a reference for identifying new physics in the future experiments at HIRFL-CSR. (author)

  15. Polarization transfer in (p,n) reactions at 495 MeV

    International Nuclear Information System (INIS)

    Taddeucci, T.N.

    1991-01-01

    Polarization transfer observables have been measured with the NTOF facility at LAMPF for (p,n) reactions at 495 MeV. Measurements of the longitudinal polarization transfer parameter D LL for transitions to discrete states at 0 degrees show convincing evidence for tensor interaction effects. Complete sets of polarization transfer observables have been measured for quasifree (p,n) reactions on 2 H, 12 C, 40 Ca at a scattering angle of 18 degrees. These measurements show no evidence for an enhancement in the isovector spin longitudinal response. 19 refs., 10 figs

  16. Visualizing the photovoltaic behavior of a type-II p-n heterojunction superstructure

    Energy Technology Data Exchange (ETDEWEB)

    Xing, Juanjuan, E-mail: xingjuanjuan@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Electron Microscopy Group, Surface Physics and Structure Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Takeguchi, Masaki [Electron Microscopy Group, Surface Physics and Structure Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Hashimoto, Ayako [Electron Microscopy Group, Surface Physics and Structure Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Global Research Center for Environment and Energy Based on Nanomaterials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Cao, Junyu; Ye, Jinhua [International Center for Materials Nanoarchitectonics (WPI-MANA), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-04-21

    Photovoltaic behavior of a CaFe{sub 2}O{sub 4}/ZnFe{sub 2}O{sub 4} p-n multi-junction was investigated with electron holography combined with an in situ light irradiation system. Potential profiles of the samples with and without light irradiation were extracted to measure the open circuit photovoltage generated either by the whole heterojunction superstructure or from each p-n junction. Investigation on the variation in the energy band configuration under light irradiation revealed the mechanism involved in the photoelectric effect, with respect to the properties of the heterojunction and its periodic quantum structure.

  17. Transport properties of monolayer and bilayer graphene p-n junctions with charge puddles in the quantum Hall regime

    International Nuclear Information System (INIS)

    Cheng Shuguang

    2010-01-01

    Recent experiments have confirmed that the electron-hole inhomogeneity in graphene is a new type of charge disorder. Motivated by such confirmation, we theoretically study the transport properties of a monolayer graphene (MLG) based p-n junction and a bilayer graphene (BLG) p-n junction in the quantum Hall regime where electron-hole puddles are considered. By using the non-equilibrium Green function method, both the current and conductance are obtained. We find that, in the presence of the electron-hole inhomogeneity, the lowest quantized conductance plateau at e 2 /h emerges in the MLG p-n junction under very small charge puddle disorder strength. For a BLG p-n junction, however, the conductance in the p-n region is enhanced with charge puddles, and the lowest quantized conductance plateau emerges at 2e 2 /h. Besides, when an ideal quantized conductance plateau is formed for a MLG p-n junction, the universal conductance fluctuation is found to be 2e 2 /3h. Furthermore, we also investigate the influence of Anderson disorder on such p-n junctions and the comparison and discussion are given accordingly. To compare the two models with different types of disorder, we investigate the conductance distribution specially. Finally the influence of disorder strength on the conductance of a MLG p-n junction is investigated.

  18. Fokker-Planck-Rosenbluth-type equations for self-gravitating systems in the 1PN approximation

    International Nuclear Information System (INIS)

    Ramos-Caro, Javier; Gonzalez, Guillermo A

    2008-01-01

    We present two formulations of Fokker-Planck-Rosenbluth-type (FPR) equations for many-particle self-gravitating systems, with first-order relativistic corrections in the post-Newtonian approach (1PN). The first starts from a covariant Fokker-Planck equation for a simple gas, introduced recently by Chacon-Acosta and Kremer (2007 Phys. Rev. E 76 021201). The second derivation is based on the establishment of an 1PN-BBGKY hierarchy, developed systematically from the 1PN microscopic law of force and using the Klimontovich-Dupree (KD) method. We close the hierarchy by the introduction of a two-point correlation function that describes adequately the relaxation process. This picture reveals an aspect that is not considered in the first formulation: the contribution of ternary correlation patterns to the diffusion coefficients, as a consequence of the nature of 1PN interaction. Both formulations can be considered as a generalization of the equation derived by Rezania and Sobouti (2000 Astron. Astrophys. 354 1110), to stellar systems where the relativistic effects of gravitation play a significant role

  19. Hydrogenation of esters catalyzed by ruthenium PN3-Pincer complexes containing an aminophosphine arm

    KAUST Repository

    Chen, Tao

    2014-08-11

    Hydrogenation of esters under mild conditions was achieved using air-stable ruthenium PN3-pincer complexes containing an aminophosphine arm. High efficiency was achieved even in the presence of water. DFT studies suggest a bimolecular proton shuttle mechanism which allows H2 to be activated by the relatively stable catalyst with a reasonably low transition state barrier. © 2014 American Chemical Society.

  20. Gamow-Teller matrix elements from 00 ( p,n) cross section

    International Nuclear Information System (INIS)

    Goodman, C.D.; Goulding, C.A.; Greenfield, M.B.; Rapaport, J.; Bainum, D.E.; Foster, C.C.; Love, W.G.; Petrovich, F.

    1980-01-01

    After simple corrections for distortion effects, 120-MeV, 0 0 (p,n) cross sections are found to be proportional to the squares of the corresponding Fermi and Gamow-Teller matrix elements extracted from β-decay measurements. It is suggested that this proportionality can be used to extract Gamow-Teller matrix elements for transitions inaccessible to β decay

  1. P-N semiconductor junctions used as X-ray detectors

    International Nuclear Information System (INIS)

    Pela, C.A.; Bruco, J.L.; Navas, E.A.; Paula, E. de; Guilardi Neto, T.

    1987-01-01

    The current response of some comercial P-N semiconductor junctions in function of X-ray incidency, in 40 to 140 KVp band used in diagnosis was characterized. Some junctions were also exposed to radiation of 80 to 250 KVp used in therapy. (C.G.C.) [pt

  2. Characteristic features of silicon multijunction solar cells with vertical p-n junctions

    International Nuclear Information System (INIS)

    Guk, E.G.; Nalet, T.A.; Shvarts, M.Z.; Shuman, V.B.

    1997-01-01

    A relatively simple technology (without photolithography) based on diffusion welding and ion-plasma deposition of an insulating coating has been developed for fabricating multijunction silicon solar cells with vertical p-n junctions. The effective collection factor for such structures is independent of the wavelength of the incident light in the wavelength range λ=340-1080 nm

  3. Sequences of measures on atomic subalgebras of P(N) | Aizpuru ...

    African Journals Online (AJOL)

    Sequences of measures on atomic subalgebras of P(N). Antonio Aizpuru, Antonio Gutierrez-D´avila. Abstract. A vector form of Phillips' theorem, for atomic Boolean algebras with countably many atoms, is given. As a consequence we obtain a new characterization of weak compact sets of σ-additive measures. Quaestiones ...

  4. Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation

    KAUST Repository

    Yu, Xuechao

    2015-07-08

    Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.

  5. Iodine (p,n) and (d,2n) excitation function measurements

    International Nuclear Information System (INIS)

    West, H.I. Jr.; Nuckolls, R.M.; Mustafa, M.G.; Lanier, R.G.

    1991-01-01

    We have measured the nuclear excitation functions for the reactions 127 I (p,n) 127 Xe and 127 I(d,2n) 127 Xe. These results are being used in the interpretation of data obtained from nuclear test diagnostics. 15 refs., 3 figs., 3 tabs

  6. The PR in PN for Education Associations. PR Bookshelf, No. 3.

    Science.gov (United States)

    National Education Association, Washington, DC.

    This booklet presents suggestions and guidelines for the effective use of public relations (PR) techniques during professional negotiations (PN) among teachers, administrators, and boards of education. Introductory sections present the National Education Association (NEA) position regarding professional negotiation and grievance procedures and…

  7. The electronic structure of radial p-n junction silicon nanowires

    Science.gov (United States)

    Chiou, Shan-Haw; Grossman, Jeffrey

    2007-03-01

    Silicon nanowires with radial p-n junctions have recently been suggested for photovoltaic applications because incident light can be absorbed along the entire length of the wire, while photogenerated carriers only need to diffuse a maximum of one radius to reach the p-n junction. If the differential of the potential is larger than the binding energy of the electron-hole pair and has a range larger than the Bohr radius of electron-hole pair, then the charge separation mechanism will be similar to traditional silicon solar cells. However, in the small-diameter limit, where quantum confinement effects are prominent, both the exciton binding energy and the potential drop will increase, and the p-n junction itself may have a dramatically different character. We present ab initio calculations based on the generalized gradient approximation (GGA) of silicon nanowires with 2-3 nm diameter in the [111] growth direction. A radial p-n junction was formed by symmetrically doping boron and phosphorous at the same vertical level along the axis of the nanowire. The competition between the slope and character of the radial electronic potential and the exciton binding energy will presented in the context of a charge separation mechanism.

  8. Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation

    KAUST Repository

    Yu, Xuechao; Shen, Youde; Liu, Tao; Wu, Tao; Jie Wang, Qi

    2015-01-01

    Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.

  9. Gamma rays from the 31P(n, γ)32P reaction

    NARCIS (Netherlands)

    Middelkoop, G. van

    1967-01-01

    The 31P(n, γ)32P reaction is studied with a 5 cm3 Ge(Li) counter. Altogether, 54 γ-rays are detected with experimental energy errors between 0.4 and 3.0 keV. The Q-value of the reaction is determined as Q = 7936.8±0.8 keV.

  10. The 2H(e, e' p)n reaction at large energy transfers

    NARCIS (Netherlands)

    Willering, Hendrik Willem

    2003-01-01

    At the ELSA accelerator facillity in Bonn, Germany, we have measured the deutron "breakup" reaction 2H(e,e' p)n at four-momentum transfers around Q2 = -0 .20(GeV/c)2 with an electron beam energy of E0 = 1.6 GeV. The cross section has been determined for energy transfers extending from the

  11. Effects of multiple substitution upon the P...N noncovalent interaction

    International Nuclear Information System (INIS)

    Scheiner, Steve

    2011-01-01

    Graphical abstract: The presence of one halogen opposite the N results in strong attraction between P and N. This force is little affected by identity of Y atoms, whether H or halogen. Highlights: → Strong attractive force directly between trivalent P and N atoms. → P...N force is unlike H-bonds or halogen bonds, but stronger than both. → Multiple halogenation beyond a single atom on P slightly weakens the interaction. - Abstract: The attractive noncovalent interaction of a P atom with N is derived primarily from two sources. Charge transfer from the N lone pair into the σ * antibonding orbital of a P-X bond that is turned away from the N atom combines with attractive Coulombic forces. As in the case of H-bonding, which is parallel in some ways to P...N attraction, placement of an electron-withdrawing substituent on the P atom enhances both of these components, and strengthens the overall interaction. However, in stark contrast with H-bonding, halogenation beyond monosubstitution does not lead to any further strengthening of the P...N noncovalent bond. Indeed, di and tri-substitution lead to small reductions in the interaction energy. In all cases, the geometry which contains a P...N bond is more stable than other candidate structures, some of which contain hydrogen or halogen bonds.

  12. Measurement of rvec at signggd→pnπ0 at large nucleon momenta

    International Nuclear Information System (INIS)

    Adams, G.S.; Baghaei, H.; Caracappa, A.; Clayton, W.; D'Angelo, A.; Hoblit, S.; Khandaker, M.; Kistner, O.C.; Kobayashi, T.; Lindgren, R.; Miceli, L.; Ruth, C.; Sandorfi, A.M.; Schaerf, C.; Sealock, R.M.; Smith, L.C.; Stoler, P.; Tedeschi, D.J.; Thorn, C.E.; Thornton, S.T.; Vaziri, K.; Whisnant, C.S.; Winhold, E.J.

    1995-01-01

    Coincident protons and neutrons from the reaction rvec at signggd→pnπ 0 were measured at a photon energy of 290 MeV. Cross sections and beam asymmetries were extracted for nucleon momenta above the quasifree region for the first time. The measured cross sections are compared with the results of a cascade Monte Carlo calculation

  13. Two-dimensional non-volatile programmable p-n junctions

    Science.gov (United States)

    Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

    2017-09-01

    Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

  14. Pn-waves Travel-time Anomaly beneath Taiwan from Dense Seismic Array Observations and its Possible Tectonic Implications

    Science.gov (United States)

    Lin, Y. Y.; Huang, B. S.; Ma, K. F.; Hsieh, M. C.

    2015-12-01

    We investigated travel times of Pn waves, which are of great important for understanding the Moho structure in Taiwan region. Although several high quality tomographic studies had been carried out, observations of Pn waves are still the most comprehensive way to elucidate the Moho structure. Mapping the Moho structure of Taiwan had been a challenging due to the small spatial dimension of Taiwan island with two subduction systems. To decipher the tectonic structure and understanding of earthquake hazard, the island of Taiwan have been implemented by several high density seismic stations, including 71 short-period stations of Central Weather Bureau Seismic Network (CWBSN) and 42 broardband stations of Broadband Array in Taiwan for Seismology (BATS). High quality seismic records of these stations would be used to identify precise Pn-wave arrival times. After station-elevation correction, we measure the difference between the observed and theoretical Pn arrivals from the IASPI 91 model for each station. For correcting uncertainties of earthquake location and origin time, we estimate relative Pn anomaly, ΔtPn , between each station and a reference station. The pattern of ΔtPn reflects the depth anomaly of Moho beneath Taiwan. In general, Pn waves are commonly observed from shallow earthquake at epicentral distance larger than 120 km. We search the global catalog since 2005 and the criteria are M > 5.5, focal depth 150 km. The 12 medium earthquakes from north Luzon are considered for analysis. We choose a station, TWKB, in the most southern point of Taiwan as the reference station due to that all events are from the south. The results indicate obvious different patterns of ΔtPn from different back-azimuths. The ΔtPn pattern of the events in the first group from the south south-east indicates that the Pn arrivals delay suddenly when the Pn waves pass through the Central Range, suggesting the Moho becomes deep rapidly. However, we cannot recognize the same pattern when

  15. Axial p-n junction and space charge limited current in single GaN nanowire

    Science.gov (United States)

    Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

    2018-01-01

    The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 1017 at cm-3 assuming a donor level N d of 2-3 × 1018 at cm-3. The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

  16. Axial p-n junction and space charge limited current in single GaN nanowire.

    Science.gov (United States)

    Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

    2018-01-05

    The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 10 17 at cm -3 assuming a donor level N d of 2-3 × 10 18 at cm -3 . The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

  17. Peripheral pn production and decay angular distributions in the reaction pi /sup -/p to (pn)p at 12 GeV/c incident momentum

    CERN Document Server

    Ghidini, B; Cantore, A; Di Corato, M; Donald, R A; Eades, John; Edwards, D N; Edwards, M E; French, Bernard R; Fry, J R; Houlden, M A; Mandelli, L; Moebes, J P; Müller, K; Navach, F; Palano, A; Palazzi-Cerrina, C; Paul, E; Picciarelli, V; Renneberg, W; Rühmer, W; Smith, I; Zito, G

    1978-01-01

    The reaction pi /sup -/p to (pn)p/sub s/, where p/sub s/ is a slow proton, was measured at 12 GeV/c incident momentum with the CERN-OMEGA spectrometer. Both antiproton and proton were identified uniquely by electronics information. 1844 events with four-momentum transfer squared in the range 0.13pn) up to 2.5 GeV were obtained. The corresponding cross section in this t range is determined to be sigma =4+or-0.4 mu b. Extrapolating the differential cross section over the whole t range assuming d sigma /dt approximately exp(5.3 t) a cross section of sigma =9.3+or-2.0 mu b is estimated. Comparison is made with data on pi /sup -/p to (pp)n/sub s/ (where n/sub s/ is a slow neutron) in the same t range. (12 refs).

  18. Neutron fragmentation in the reaction pn to pX at 19 GeV/c

    CERN Document Server

    Bakken, V; Lundborg, P; Makela, J; Pimiä, M; Selldén, B; Sundell, E; Tuominiemi, J

    1979-01-01

    Data on the reaction pn to pX are extracted from a pd experiment in the CERN 2 m DBC at 10 GeV/c. The cross-section for neutron fragmentation events with mod t mod <1 (GeV/c)/sup 2/ determined and compared with data at high energies at fixed M/sub x//sup 2//s and t. The cross-section can be described with the triple-Regge formula taking into account only the pion exchange contributions, i.e. the pi pi P and pi pi R terms. A leading-particle effect consistent with the pion exchange model is observed in the longitudinal-momentum distribution of the negative pions in the final state of the reaction pn to pX, when transformed to the rest frame of the recoiling system X. (10 refs).

  19. Preparation of TNAs/NiO p-n heterojunction and their applications in UV photosensor

    Science.gov (United States)

    Yusoff, M. M.; Mamat, M. H.; Malek, M. F.; Abdullah, M. A. R.; Ismail, A. S.; Saidi, S. A.; Mohamed, R.; Suriani, A. B.; Khusaimi, Z.; Rusop, M.

    2018-05-01

    A nanocomposite consisted of n-type titanium dioxide (TiO2) nanorod arrays (TNAs) and p-type nickel oxide (NiO) were deposited using a novel facile low-temperature aqueous chemical route (ACR) in a Schott bottle with cap clamps and sol-gel spin coating method, respectively on a transparent conductive oxide (TCO) glass substrate for the application of ultraviolet (UV) photosensor. The p-n heterojunction photosensor exhibited an increase in photocurrent under UV light (365 nm, 750 µW/cm2) at applied reverse bias. The measured UV response also revealed an increase in photocurrent, and dark current with increasing applied reverse bias on the p-n heterojunction. In this study, the fabricated TNAs/NiO composite nanostructures showed potential applications for photosensor based on the steady photocurrent results obtained under UV irradiation

  20. Recent developments of the MARC/PN transport theory code including a treatment of anisotropic scatter

    International Nuclear Information System (INIS)

    Fletcher, J.K.

    1987-12-01

    The computer code MARC/PN provides a solution of the multigroup transport equation by expanding the flux in spherical harmonics. The coefficients of the series so obtained satisfy linked first order differential equations, and on eliminating terms associated with odd parity harmonics a second order system results which can be solved by established finite difference or finite element techniques. This report describes modifications incorporated in MARC/PN to allow for anisotropic scattering, and the modelling of irregular exterior boundaries in the finite element option. The latter development leads to substantial reductions in problem size, particularly for three dimensions. Also, links to an interactive graphics mesh generator (SUPERTAB) have been added. The final section of the report contains results from problems showing the effects of anisotropic scatter and the ability of the code to model irregular geometries. (author)

  1. P-N defect in GaNP studied by optically detected magnetic resonance

    International Nuclear Information System (INIS)

    Chen, W.M.; Thinh, N.Q.; Vorona, I.P.; Buyanova, I.A.; Xin, H.P.; Tu, C.W.

    2003-01-01

    We provide experimental evidence for an intrinsic defect in GaNP from optically detected magnetic resonance (ODMR). This defect is identified as a P-N complex, exhibiting hyperfine structure due to interactions with a nuclear spin I=((1)/(2)) of one P atom and also a nuclear spin I=1 due to one N atom. The introduction of the defect is assisted by the incorporation of N within the studied N composition range of up to 3.1%, under non-equilibrium growth conditions during gas-source molecular beam epitaxy. The corresponding ODMR spectrum was found to be isotropic, suggesting an A 1 symmetry of the defect state. The localization of the electron wave function at the P-N defect in GaNP is found to be even stronger than that for the isolated P Ga antisite in its parent binary compound GaP

  2. Array analysis of regional Pn and Pg wavefields from the Nevada Test Site

    International Nuclear Information System (INIS)

    Leonard, M.A.

    1991-06-01

    Small-aperture high-frequency seismic arrays with dimensions of a few kilometers or less, can improve our ability to seismically monitor compliance with a low-yield Threshold Test Ban Treaty. This work studies the characteristics and effectiveness of array processing of the regional Pn and Pg wavefields generated by underground nuclear explosions at the Nevada Test Site. Waveform data from the explosion HARDIN (m b = 5.5) is recorded at a temporary 12-element, 3-component, 1.5 km-aperture array sited in an area of northern Nevada. The explosions VILLE (m b = 4.4) and SALUT (m b = 5.5) are recorded at two arrays sited in the Mojave desert, one a 96-element vertical-component 7 km-aperture array and the other a 155-element vertical-component 4 km-aperture array. Among the mean spectra for the m b = 5.5 events there are significant differences in low-frequency spectral amplitudes between array sites. The spectra become nearly identical beyond about 6 Hz. Spectral ratios are used to examine seismic source properties and the partitioning of energy between Pn and Pg. Frequency-wavenumber analysis at the 12-element array is used to obtain estimates of signal gain, phase velocity, and source azimuth. This analysis reveals frequency-dependent biases in velocity and azimuth of the coherent Pn and Pg arrivals. Signal correlation, the principal factor governing array performance, is examined in terms of spatial coherence estimates. The coherence is found to vary between the three sites. In all cases the coherence of Pn is greater than that for Pg. 81 refs., 92 figs., 5 tabs

  3. (p,n) and (n,p) reactions as probes of isovector giant monopole resonances

    International Nuclear Information System (INIS)

    Auerbach, N.; Bowman, J.D.; Franey, M.A.; Love, W.G.

    1983-01-01

    Nucleon charge exchange reactions are explored as prospective probes of isovector giant monopole resonances. Using charge exchange transition densities based on random-phase approximation sum rules, distorted wave impulse approximation calculations are made for the (p,n) and (n,p) reactions exciting the isovector giant monopole resonances in several nuclei at bombarding energies of 120 and 800 MeV. Based on our calculations, the charge exchange reactions at 800 MeV appear more promising

  4. Draft User Functionalities and Interfaces of PN Services (Low-Fi Prototyping)

    DEFF Research Database (Denmark)

    Karamolegkos, P.; Larsen, J. E.; Larsen, Lars Bo

    2006-01-01

    Internal report of WP1 Task 4 activities from January 2006 to August 2006. This report describes the draft user functionalities and coming user interfaces for PN services. It is a working document to be handed over to WP1 Task1 and Task3 for guidelines on specification. State of the art usability...... and user experience, conceptual design work on the two pilot services, MAGNET.CARE and Nomadic@Work, is described....

  5. Total number of planetary nebulae in different galaxies and the PN distance scale.

    Science.gov (United States)

    Peimbert, M.

    1990-12-01

    RESUMEN A partir de una muestra de quince galaxias se encuentra que la tasa de natalidad de nebulosas planetarias por unidad de luminosidad, , disminuye al aumentar la luminosidad y al aumentar (B - V)0. Se discuten posibles explicaciones para estos resultados. Se estima el valor de para la Galaxia y a partir de el se encuentra que el numero total de nebulosas planetarias en nuestra galaxia con R de 7200 j 1800. El valor galactico de implica que la mayorfa de las estrellas de masa intermedia pasa por la etapa de nebulosa planetaria. El valor galactico de , la tasa de mortalidad estelar por unidad de luminosidad y la tasa de natalidad de enanas blancas favorecen escalas de distancias largas para nebulosas planetarias, como la de Cudworth (1974) y la de Mallik y Peimbert (1988). ABSTRACT From a sample of fifteen galaxies it is found that the birth rate of PN per unit luminosity, , decreases with increasing luminosity and with increasing (B - V)0 possible reasons for these relationships are discussed. The value for the Galaxy is estimated and, from it, a total number of PN of 7200 # 1800 wid R < 0.64 pc is obtained. The galactic value implies that most of the intermediate mass stars go through the PN stage. The galactic value, the stellar death rate per unit luminosity and the white dwarf birth rate are in favor of long distance scales to PN like those of Cudworth (1974) and Mallik and (1988). Key wonis: NEBULAE.PLANETARY - STARS-EVOLUTION - STARS-SThLIAR STA. S

  6. Array analysis of regional Pn and Pg wavefields from the Nevada Test Site

    Energy Technology Data Exchange (ETDEWEB)

    Leonard, M.A. (California Univ., Berkeley, CA (United States). Dept. of Geology and Geophysics Lawrence Berkeley Lab., CA (United States))

    1991-06-01

    Small-aperture high-frequency seismic arrays with dimensions of a few kilometers or less, can improve our ability to seismically monitor compliance with a low-yield Threshold Test Ban Treaty. This work studies the characteristics and effectiveness of array processing of the regional Pn and Pg wavefields generated by underground nuclear explosions at the Nevada Test Site. Waveform data from the explosion HARDIN (m{sub b} = 5.5) is recorded at a temporary 12-element, 3-component, 1.5 km-aperture array sited in an area of northern Nevada. The explosions VILLE (m{sub b} = 4.4) and SALUT (m{sub b} = 5.5) are recorded at two arrays sited in the Mojave desert, one a 96-element vertical-component 7 km-aperture array and the other a 155-element vertical-component 4 km-aperture array. Among the mean spectra for the m{sub b} = 5.5 events there are significant differences in low-frequency spectral amplitudes between array sites. The spectra become nearly identical beyond about 6 Hz. Spectral ratios are used to examine seismic source properties and the partitioning of energy between Pn and Pg. Frequency-wavenumber analysis at the 12-element array is used to obtain estimates of signal gain, phase velocity, and source azimuth. This analysis reveals frequency-dependent biases in velocity and azimuth of the coherent Pn and Pg arrivals. Signal correlation, the principal factor governing array performance, is examined in terms of spatial coherence estimates. The coherence is found to vary between the three sites. In all cases the coherence of Pn is greater than that for Pg. 81 refs., 92 figs., 5 tabs.

  7. Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields.

    Science.gov (United States)

    Overweg, Hiske; Eggimann, Hannah; Liu, Ming-Hao; Varlet, Anastasia; Eich, Marius; Simonet, Pauline; Lee, Yongjin; Watanabe, Kenji; Taniguchi, Takashi; Richter, Klaus; Fal'ko, Vladimir I; Ensslin, Klaus; Ihn, Thomas

    2017-05-10

    We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.

  8. Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells

    Science.gov (United States)

    Borrego, J. M.; Keeney, R. P.; Bhat, I. B.; Bhat, K. N.; Sundaram, L. G.; Ghandhi, S. K.

    1982-01-01

    The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.

  9. Modeling pN2 through Geological Time: Implications for Planetary Climates and Atmospheric Biosignatures.

    Science.gov (United States)

    Stüeken, E E; Kipp, M A; Koehler, M C; Schwieterman, E W; Johnson, B; Buick, R

    2016-12-01

    Nitrogen is a major nutrient for all life on Earth and could plausibly play a similar role in extraterrestrial biospheres. The major reservoir of nitrogen at Earth's surface is atmospheric N 2 , but recent studies have proposed that the size of this reservoir may have fluctuated significantly over the course of Earth's history with particularly low levels in the Neoarchean-presumably as a result of biological activity. We used a biogeochemical box model to test which conditions are necessary to cause large swings in atmospheric N 2 pressure. Parameters for our model are constrained by observations of modern Earth and reconstructions of biomass burial and oxidative weathering in deep time. A 1-D climate model was used to model potential effects on atmospheric climate. In a second set of tests, we perturbed our box model to investigate which parameters have the greatest impact on the evolution of atmospheric pN 2 and consider possible implications for nitrogen cycling on other planets. Our results suggest that (a) a high rate of biomass burial would have been needed in the Archean to draw down atmospheric pN 2 to less than half modern levels, (b) the resulting effect on temperature could probably have been compensated by increasing solar luminosity and a mild increase in pCO 2 , and (c) atmospheric oxygenation could have initiated a stepwise pN 2 rebound through oxidative weathering. In general, life appears to be necessary for significant atmospheric pN 2 swings on Earth-like planets. Our results further support the idea that an exoplanetary atmosphere rich in both N 2 and O 2 is a signature of an oxygen-producing biosphere. Key Words: Biosignatures-Early Earth-Planetary atmospheres. Astrobiology 16, 949-963.

  10. Technetium-99m labeling of N-[N-(3-diphenylphosphino propionyl)glycyl]cysteine (PN2S-OH) and its methyl ester derivative (PN2S-OMe)

    International Nuclear Information System (INIS)

    Visentin, Roberta; Giron, Maria Cecilia; Bello, Michele; Mazzi, Ulderico

    2004-01-01

    N-[N-(3-diphenylphosphinopropionyl)glycyl]cysteine and its methyl ester derivative were labeled with 99m Tc at neutral pH, leading to a single species in high yield (>95%) in 30 min. RP-HPLC comparison with the analogue Re V -oxo complexes identified the labeled compounds as the anti isomers of pentacoordinated 99m TcO[PN 2 S]-OH and 99m TcO[PN 2 S]-OMe complexes. The compounds are stable from pH 7 to pH 9 when 99m TcO[PN 2 S]-OH interconverts to related syn isomer, while 99m TcO[PN 2 S]-OMe undergoes both saponification and interconversion. They exhibit high stability in human plasma and in vivo (mice), and a biodistribution characterized by hepatobiliary excretion

  11. PN Sequence Preestimator Scheme for DS-SS Signal Acquisition Using Block Sequence Estimation

    Directory of Open Access Journals (Sweden)

    Sang Kyu Park

    2005-03-01

    Full Text Available An m-sequence (PN sequence preestimator scheme for direct-sequence spread spectrum (DS-SS signal acquisition by using block sequence estimation (BSE is proposed and analyzed. The proposed scheme consists of an estimator and a verifier which work according to the PN sequence chip clock, and provides not only the enhanced chip estimates with a threshold decision logic and one-chip error correction among the first m received chips, but also the reliability check of the estimates with additional decision logic. The probabilities of the estimator and verifier operations are calculated. With these results, the detection, the false alarm, and the missing probabilities of the proposed scheme are derived. In addition, using a signal flow graph, the average acquisition time is calculated. The proposed scheme can be used as a preestimator and easily implemented by changing the internal signal path of a generally used digital matched filter (DMF correlator or any other correlator that has a lot of sampling data memories for sampled PN sequence. The numerical results show rapid acquisition performance in a relatively good CNR.

  12. Characteristics of electroplated Ni thick film on the PN junction semiconductor for beta-voltaic battery

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jin Joo; Uhm, Young Rang; Park, Keun Young; Son, Kwang Jae [Radioisotope Research Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-12-15

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a {sup 63}Ni plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 Å were coated with Ni at current density from 10 to 50 mA cm{sup -2}. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased. The results showed that the optimum surface shape was obtained at a current density of 10 mA cm{sup -2} in seed layer with thickness of 500 Å, 20 mA cm{sup -2} of 1000 Å. Also, pure Ni deposit was well coated on a PN junction semiconductor without any oxide forms. Using the line width of (111) in XRD peak, the average grain size of the Ni thick firm was measured. The results showed that the average grain size was increased as the thickness of seed layer was increased.

  13. Characteristics of electroplated Ni thick film on the PN junction semiconductor for beta-voltaic battery

    International Nuclear Information System (INIS)

    Kim, Jin Joo; Uhm, Young Rang; Park, Keun Young; Son, Kwang Jae

    2014-01-01

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a 63 Ni plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 Å were coated with Ni at current density from 10 to 50 mA cm -2 . The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased. The results showed that the optimum surface shape was obtained at a current density of 10 mA cm -2 in seed layer with thickness of 500 Å, 20 mA cm -2 of 1000 Å. Also, pure Ni deposit was well coated on a PN junction semiconductor without any oxide forms. Using the line width of (111) in XRD peak, the average grain size of the Ni thick firm was measured. The results showed that the average grain size was increased as the thickness of seed layer was increased

  14. pn junctions based on a single transparent perovskite semiconductor BaSnO3

    Science.gov (United States)

    Kim, Hoon Min; Kim, Useong; Park, Chulkwon; Kwon, Hyukwoo; Lee, Woongjae; Kim, Tai Hoon; Kim, Kee Hoon; Char, Kookrin; Mdpl, Department Of Physics; Astronomy Team; Censcmr, Department Of Physics; Astronomy Team

    2014-03-01

    Successful p doping of transparent oxide semiconductor will further increase its potential, especially in the area of optoelectronic applications. We will report our efforts to dope the BaSnO3 (BSO) with K by pulsed laser deposition. Although the K doped BSO exhibits rather high resistivity at room temperature, its conductivity increases dramatically at higher temperatures. Furthermore, the conductivity decreases when a small amount of oxygen was removed from the film, consistent with the behavior of p type doped oxides. We have fabricated pn junctions by using K doped BSO as a p type and La doped BSO as an n type material. I_V characteristics of these devices show the typical rectifying behavior of pn junctions. We will present the analysis of the junction properties from the temperature dependent measurement of their electrical properties, which shows that the I_V characteristics are consistent with the material parameters such as the carrier concentration, the mobility, and the bandgap. Our demonstration of pn junctions based on a single transparent perovskite semiconductor further enhances the potential of BSO system with high mobility and stability.

  15. Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions.

    Science.gov (United States)

    Yang, D Z; Wang, T; Sui, W B; Si, M S; Guo, D W; Shi, Z; Wang, F C; Xue, D S

    2015-09-01

    We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature.

  16. Effect of deep dislocation levels in silicon on the properties of p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Zakharov, A.G.; Dudko, V.G.; Nabokov, G.M.; Sechenov, D.A.

    1988-07-01

    We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.

  17. Investigation of the transport properties and compositions of the Ca{sub 2}RE{sub 7}Pn{sub 5}O{sub 5} series (RE=Pr, Sm, Gd, Dy; Pn=Sb, Bi)

    Energy Technology Data Exchange (ETDEWEB)

    Forbes, Scott [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada); Yuan, Fang [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada); Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Kosuda, Kosuke; Kolodiazhnyi, Taras [Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Mozharivskyj, Yurij, E-mail: mozhar@mcmaster.ca [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada)

    2016-10-15

    The Ca{sub 2}RE{sub 7}Pn{sub 5}O{sub 5} phases (RE=Pr, Sm, Gd, Dy; Pn=Sb, Bi) were successfully prepared from high temperature reactions at 1225–1300 °C. These phases maintain the same structure types as the parent RE{sub 9}Pn{sub 5}O{sub 5} phases, except for a Ca/RE mixing. The study and preparation of these phases was motivated by the desire to shift the metallic type properties of the parent RE{sub 9}Pn{sub 5}O{sub 5} phases to a level more suitable for thermoelectric applications. Electrical resistivity measurements performed on pure, bulk samples indicated all phases to be narrow band gap semiconductors or semimetals, supporting the charge balanced electron count of the Ca{sub 2}RE{sub 7}Pn{sub 5}O{sub 5} composition. Unfortunately, all samples are too electrically resistive for any potential usage as thermoelectrics. Electronic band structure calculations performed on idealized RE{sub 9}Pn{sub 5}O{sub 5} structures revealed the presence of a pseudogap at the Fermi level, which is consistent with the observed electrical resistivity and Seebeck coefficient behavior. - Graphical abstract: Ca substitution in RE{sub 9}Pn{sub 5}O{sub 5} leads to charge-balanced Ca{sub 2}RE{sub 7}Pn{sub 5}O{sub 5} phases with semiconducting or semimetallic properties. - Highlights: • The RE{sub 9}Pn{sub 5}O{sub 5} structure may be stabilized with calcium substitution in the form of Ca{sub 2}RE{sub 7}Pn{sub 5}O{sub 5}. • The Ca{sub 2}RE{sub 7}Pn{sub 5}O{sub 5} phases maintain the parent P 4/n structure, albeit with Ca/RE mixing. • The Ca{sub 2}RE{sub 7}Sb{sub 5}O{sub 5} phases behave as semiconductors while Ca{sub 2}RE{sub 7}Bi{sub 5}O{sub 5} are semimetals with electron-electron correlations. • Electronic structure calculations yield a semimetal-like density of states for both Ca{sub 2}RE{sub 7}Sb{sub 5}O{sub 5} and Ca{sub 2}RE{sub 7}Bi{sub 5}O{sub 5}.

  18. Synthesis, crystal structure, and magnetic properties of quaternary iron selenides: Ba{sub 2}FePnSe{sub 5} (Pn=Sb, Bi)

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jian; Greenfield, Joshua T.; Kovnir, Kirill

    2016-10-15

    Two new barium iron pnictide–selenides, Ba{sub 2}FeSbSe{sub 5} and Ba{sub 2}FeBiSe{sub 5}, were synthesized by a high-temperature solid-state route and their crystal structures were determined using single crystal X-ray diffraction. Both compounds are isomorphic to the high pressure phase Ba{sub 3}FeS{sub 5} and crystallize in the orthorhombic space group Pnma (No. 62) with cell parameters of a=12.603(2)/12.619(2) Å, b=9.106(1)/9.183(1) Å, c=9.145(1)/9.123(1) Å and Z=4 for Ba{sub 2}FeSbSe{sub 5} and Ba{sub 2}FeBiSe{sub 5}, respectively. According to differential scanning calorimetry, Ba{sub 2}FePnSe{sub 5} compounds exhibit high thermal stability and melt congruently at 1055(5) K (Pn=Sb) and 1105(5) K (Pn=Bi). Magnetic characterizations reveal strong antiferromagnetic nearest-neighbor interactions in both compounds resulting in an antiferromagnetic ordering at 58(1) K for Ba{sub 2}FeSbSe{sub 5} and 79(2) K for Ba{sub 2}FeBiSe{sub 5}. The magnetic interactions between Fe{sup 3+} centers, which are at least 6 Å apart from each other, are mediated by superexchange interactions. - Graphical abstract: In Ba{sub 2}FeSbSe{sub 5} and Ba{sub 2}FeBiSe{sub 5} the magnetic interactions between Fe{sup 3+} centers, which are at least 6 Å apart from each other, are mediated by superexchange interactions. - Highlights: • New compounds Ba{sub 2}FeSbSe{sub 5} and Ba{sub 2}FeBiSe{sub 5} have been synthesized. • The crystal structure was determined by single crystal X-ray diffraction. • Both compounds melt congruently at temperatures above 1000 K. • Ba{sub 2}FeSbSe{sub 5} and Ba{sub 2}FeBiSe{sub 5} exhibit AFM ordering at 58 K (Sb) and 70 K (Bi). • Magnetic exchange between Fe{sup 3+} is mediated by either Se–Sb(Bi)–Se or Se–Ba–Se bridges.

  19. Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

    KAUST Repository

    Tsai, Meng-Lin; Li, Ming-yang; Duran Retamal, Jose Ramon; Lam, Kai-Tak; Lin, Yung-Chang; Suenaga, Kazu; Chen, Lih-Juann; Liang, Gengchiau; Li, Lain-Jong; He, Jr-Hau

    2017-01-01

    The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting

  20. Efficient transfer hydrogenation reaction Catalyzed by a dearomatized PN 3P ruthenium pincer complex under base-free Conditions

    KAUST Repository

    He, Lipeng

    2012-03-01

    A dearomatized complex [RuH(PN 3P)(CO)] (PN 3PN, N′-bis(di-tert-butylphosphino)-2,6-diaminopyridine) (3) was prepared by reaction of the aromatic complex [RuH(Cl)(PN 3P)(CO)] (2) with t-BuOK in THF. Further treatment of 3 with formic acid led to the formation of a rearomatized complex (4). These new complexes were fully characterized and the molecular structure of complex 4 was further confirmed by X-ray crystallography. In complex 4, a distorted square-pyramidal geometry around the ruthenium center was observed, with the CO ligand trans to the pyridinic nitrogen atom and the hydride located in the apical position. The dearomatized complex 3 displays efficient catalytic activity for hydrogen transfer of ketones in isopropanol. © 2011 Elsevier B.V. All rights reserved.

  1. Optimization of Silicon parameters as a betavoltaic battery: Comparison of Si p-n and Ni/Si Schottky barrier

    International Nuclear Information System (INIS)

    Rahmani, Faezeh; Khosravinia, Hossein

    2016-01-01

    Theoretical studies on the optimization of Silicon (Si) parameters as the base of betavoltaic battery have been presented using Monte Carlo simulations and the state equations in semiconductor to obtain maximum power. Si with active area of 1 cm 2 has been considered in p-n junction and Schottky barrier structure to collect the radiation induced-charge from 10 mCi cm −2 of Nickle-63 ( 63 Ni) Source. The results show that the betavoltaic conversion efficiency in the Si p-n structure is about 2.7 times higher than that in the Ni/Si Schottky barrier structure. - Highlights: • Silicon parameters were studied in betavoltaic batteries. • Studied betavoltaic batteries include p-n and Schottky barrier structures. • The p-n structure has higher conversion efficiency.

  2. Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

    Science.gov (United States)

    Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

    2016-11-10

    We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

  3. Photoeffect on the p-n silicon junction under conditions of interband heating of carriers by light

    Energy Technology Data Exchange (ETDEWEB)

    Andrianov, A V; Valov, P M; Sukhanov, V L; Tuchkevich, V V; Shmidt, N M [AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.

    1980-05-01

    Photoeffect on the p-n silicon junction conditioned by interband heating of carriers by the CO/sub 2/-laser light has been studied experimentally at room temperature and under nonstationary conditions. Photoelectromotive force (p.e.m.f.) with the sign opposite to the value p.e.m.f. appears in the case of direct displacement of p-n structures. The p.e.m.f. value increases with the increase of direct desplacement. Photoelectrons are shown to make the main contribution into the mechanism of p.e.m.f. formation. Lateral p.e.m.f. connected with spreading currents in the direction parallel to the surface of the p-n junction appears in the p-n structure base. It has been found out that structures with highly alloyed emitter at reverse displacement operates under standard photodiod conditions, that is due to the semiconductor lattice heating by CO/sub 2/-laser irradiation.

  4. Photoeffect on the p-n silicon junction under conditions of interband heating of carriers by light

    International Nuclear Information System (INIS)

    Andrianov, A.V.; Valov, P.M.; Sukhanov, V.L.; Tuchkevich, V.V.; Shmidt, N.M.

    1980-01-01

    Photoeffect on the p-n silicon junction conditioned by interband heating of carriers by the CO 2 -laser light has been studied experimentally at room temperature and under nonstationary conditions. Photoelectromotive force (p.e.m.f.) with the sign opposite to the value p.e.m.f. appears in the case of direct displacement of p-n structures. The p.e.m.f. value increases with the increase of direct desplacement. Photoelectrons are shown to make the main contribution into the mechanism of p.e.m.f. formation. Lateral p.e.m.f. connected with spreading currents in the direction parallel to the surface of the p-n junction appears in the p-n structure base. It has been found out that structures with highly alloyed emitter at reverse displacement operates under standard photodiod conditions, that is due to the semiconductor lattice heating by CO 2 -laser irradiation

  5. Constraining Phosphorus Chemistry in Carbon- and Oxygen-Rich Circumstellar Envelopes: Observations of PN, HCP, and CP

    Science.gov (United States)

    Milam, S. N.; Halfen, D. T.; Tenenbaum, E. D.; Apponi, A. J.; Woolf, N. J.; Ziurys, L. M.

    2008-09-01

    Millimeter-wave observations of PN, CP, and HCP have been carried out toward circumstellar envelopes of evolved stars using the Arizona Radio Observatory (ARO). HCP and PN have been identified in the carbon-rich source CRL 2688 via observations at 1 mm using the Submillimeter Telescope (SMT) and 2-3 mm with the Kitt Peak 12 m. An identical set of measurements were carried out toward IRC +10216, as well as observations of CP at 1 mm. PN was also observed toward VY Canis Majoris (VY CMa), an oxygen-rich supergiant star. The PN and HCP line profiles in CRL 2688 and IRC +10216 are roughly flat topped, indicating unresolved, optically thin emission; CP, in contrast, has a distinct "U" shape in IRC +10216. Modeling of the line profiles suggests abundances, relative to H2, of f(PN) ~ (3-5) × 10-9 and f(HCP) ~ 2 × 10-7 in CRL 2688, about an order of magnitude higher than in IRC +10216. In VY CMa, f(PN) is ~4 × 10-8. The data in CRL 2688 and IRC +10216 are consistent with LTE formation of HCP and PN in the inner envelope, as predicted by theoretical calculations, with CP a photodissociation product at larger radii. The observed abundance of PN in VY CMa is a factor of 100 higher than LTE predictions. In IRC +10216, the chemistry of HCP/CP mimics that of HCN/CN and suggests an N2 abundance of f ~ 1 × 10-7. The chemistry of phosphorus appears active in both carbon- and oxygen-rich envelopes of evolved stars.

  6. Hydrogen bonding interactions in PN...HX complexes: DFT and ab initio studies of structure, properties and topology.

    Science.gov (United States)

    Varadwaj, Pradeep Risikrishna

    2010-05-01

    Spin-restricted DFT (X3LYP and B3LYP) and ab initio (MP2(fc) and CCSD(fc)) calculations in conjunction with the Aug-CC-pVDZ and Aug-CC-pVTZ basis sets were performed on a series of hydrogen bonded complexes PN...HX (X = F, Cl, Br) to examine the variations of their equilibrium gas phase structures, energetic stabilities, electronic properties, and vibrational characteristics in their electronic ground states. In all cases the complexes were predicted to be stable with respect to the constituent monomers. The interaction energy (Delta E) calculated using a super-molecular model is found to be in this order: PN...HF > PN...HCl > PN...HBr in the series examined. Analysis of various physically meaningful contributions arising from the Kitaura-Morokuma (KM) and reduced variational space self-consistent-field (RVS-SCF) energy decomposition procedures shows that the electrostatic energy has significant contribution to the over-all interaction energy. Dipole moment enhancement (Delta mu) was observed in these complexes expected of predominant dipole-dipole electrostatic interaction and was found to follow the trend PN...HF > PN...HCl > PN...HBr at the CCSD level. However, the DFT (X3LYP and B3LYP) and MP2 levels less accurately determined these values (in this order HF 0, nabla(2)rho(c) > 0 and H(c) > 0 at the BCP) whilst the bonds in PN (rho(c) > 0, nabla(2)rho(c) > 0 and H(c) 0, nabla(2)rho(c) BD*(HX) delocalization.

  7. Antiperovskite nitridophosphate oxide Ho{sub 3}[PN{sub 4}]O by high-pressure metathesis

    Energy Technology Data Exchange (ETDEWEB)

    Kloss, Simon D.; Weidmann, Niels; Schnick, Wolfgang [Department of Chemistry, University of Munich (LMU), Butenandtstrasse 5-13, 81377, Munich (Germany)

    2017-04-03

    Rare-earth nitridophosphates are a recently discovered class of materials, which are accessible by high-pressure metathesis. Antiperovskite-type Ho{sub 3}[PN{sub 4}]O was synthesized from HoF{sub 3}, LiPN{sub 2}, Li{sub 3}N, and Li{sub 2}O at 5 GPa and ca. 1025 C by this method and the multianvil technique. Ho{sub 3}[PN{sub 4}]O contains rarely observed isolated PN{sub 4} tetrahedra and can be derived by the hierarchical substitution of the ABX{sub 3} perovskite, in which Ho occupies the X positions, O occupies the B position, and the PN{sub 4} tetrahedra occupy the A position. The structure was refined on the basis of powder diffraction data [I4/mcm, a = 6.36112(3), c = 10.5571(1) Aa, Z = 4, R{sub wp} = 0.04, R{sub Bragg} = 0.01, χ{sup 2} = 2.275] starting from the structural model of isotypic Gd{sub 3}[SiN{sub 3}O]O. To characterize Ho{sub 3}[PN{sub 4}]O, elemental analyses were performed through energy-dispersive X-ray spectroscopy (EDX) and inductively coupled plasma optical emission spectroscopy (ICP-OES). Ho{sub 3}[PN{sub 4}]O is paramagnetic down to low temperatures with μ{sub eff} = 10.43(1) μ{sub B} and a Curie temperature (Θ) of 0.11(4) K. It shows the optical characteristics of Ho{sup 3+} ions and vibrations corresponding to isolated PN{sub 4} tetrahedra. On the basis of DFT calculations [generalized gradient approximation (GGA)], Ho{sub 3}[PN{sub 4}]O has an indirect band gap of 1.87 eV. We demonstrate the versatility of high-pressure metathesis by attaining the low end of the P/N atomic ratio κ = 1/4. This confirms the previous assumption that rare-earth nitridophosphates with κ = 1/2 to 1/4 are feasible by this method. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Laser processing for bevel termination of high voltage pn junction in SiC

    International Nuclear Information System (INIS)

    Kubiak, A; Ruta, Ł; Rosowski, A; French, P

    2016-01-01

    Proper edge termination of the p-n junction in silicon carbide is a key requirement in the fabrication of discrete devices able to withstand high voltages in reverse polarization. Due to the hardness of SiC the creation of the bevel termination remains difficult using mechanical machining. The use of laser beam sources with medium wavelength (532 nm) gives new possibilities in the machining of the silicon carbide. The paper presents the fabrication of the bevel termination structure in SiC using a green DPSS laser equipped with scanner and dedicated rotating sample holder. Characterization of the resulting structures proves the high potential of the proposed approach. (paper)

  9. Inclusive production of. delta. /sup + +/(1232) in pn interactions at 19 GeV/c

    Energy Technology Data Exchange (ETDEWEB)

    Bakken, V.; Breivik, F.O.; Jacobsen, T.; Rudjord, A.L. (Oslo Univ. (Norway) Fysisk Inst.)

    1982-12-21

    We present a study of ..delta../sup + +/ production in pn interactions at 19 GeV/c, where the ..delta../sup + +/ is emitted in the protonlike (..delta..sub(F)/sup + +/) and neutron-like (..delta..sub(B)/sup + +/) c.m. hemispheres. The cross-section sigma(pn->..delta..sub(F)/sup + +/+X)=(3.09+-0.43) mb is about three times larger than sigma(pn->..delta..sub(B)/sup + +/+X)=(0.94+-0.34) mb. About 2/3 of ..delta..sub(F)/sup + +/ is peripherally produced with vertical stroketsub(p,..delta..)vertical stroke<1 (GeV/c)/sup 2/, while the cross-section for ..delta..sub(B)/sup + +/ production is nearly zero for vertical stroketsub(n,..delta..)vertical stroke<1 (GeV/c)/sup 2/. We have made a detailed study of the energy dependence of the reaction ap->..delta../sup + +/+X (a=p, anti p, n, ..pi..sup(+-), Ksup(+-)) for vertical stroketsub(p,..delta..)vertical stroke<1 (GeV/c)/sup 2/, by applying the same fitting procedure to extract the ..delta../sup + +/ cross-section to all available mass spectra. All the normalized cross-sections R=sigma(..delta../sup + +/)/sigmasub(inel) can be well described by R=R/sub 0/+R/sub 1/sup(a)psup(-..cap alpha..)sub(lab), where R/sub 0/ and ..cap alpha.. are the same for all reactions, while R/sub 1/sup(a) varies with the beam type a. The value of ..cap alpha.. is slightly below unity. The differential cross section of pn->..delta..sub(F)/sup + +/+X has been determined as a function of the variables t, t', x, y, psub(T)/sup 2/ and Msub(X)/sup 2/ both in the whole kinematical region and for vertical stroketsub(p,..delta..)vertical stroke<1 (GeV/c)/sup 2/. We show that the peripherally produced ..delta..sub(F)/sup + +/ is consistent with the dominance of the one-pion exchange mechanism. This follows from a study of the density matrix elements, the comparison of some properties of the system X with real ..pi../sup +/p data and from the results of a triple-Regge analysis.

  10. Hybrid PN-SN Calculations with SAAF for the Multiscale Transport Capability in Rattlesnake

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yaqi; Schunert, Sebastian; DeHart, Mark; Martineau, Richard

    2016-05-01

    Two interface conditions, the Lagrange multiplier method and the upwinding method, for hybrid \\pn-\\sn calculations is proposed for the self-adjoint angular flux (SAAF) formulation of the transport equation using the continuous finite element method (FEM) for spatial discretization. These interface conditions are implemented in Rattlesnake, the radiation transport application built on MOOSE, for the on-going multiscale transport simulation effort at INL. For smoothing the solution at the interface for the Lagrange multiplier method, a method based on \\sn Lagrange interpolation on the sphere is proposed. Numerical results indicate that the interface conditions give the expected convergence.

  11. Valley detection using a graphene gradual pn junction with spin–orbit coupling: An analytical conductance calculation

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Mou, E-mail: yang.mou@hotmail.com [Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Wang, Rui-Qiang [Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Bai, Yan-Kui [College of Physical Science and Information Engineering and Hebei Advance Thin Films Laboratory, Hebei Normal University, Shijiazhuang, Hebei 050024 (China)

    2015-09-04

    Graphene pn junction is the brick to build up variety of graphene nano-structures. The analytical formula of the conductance of graphene gradual pn junctions in the whole bipolar region has been absent up to now. In this paper, we analytically calculated that pn conductance with the spin–orbit coupling and stagger potential taken into account. Our analytical expression indicates that the energy gap causes the conductance to drop a constant value with respect to that without gap in a certain parameter region, and manifests that the curve of the conductance versus the stagger potential consists of two Gaussian peaks – one valley contributes one peak. The latter feature allows one to detect the valley polarization without using double-interface resonant devices. - Highlights: • Analytical conductance formula of the gradual graphene pn junction with spin–orbit coupling in the whole bipolar region. • Exploring the valley-dependent transport of gradual graphene pn junctions analytically. • Conductance peak without resonance.

  12. A Psychometric Evaluation of a Swedish Version of the Positive–Negative Sex-Role Inventory (PN-SRI

    Directory of Open Access Journals (Sweden)

    Therese Rydberg Sterner

    2018-02-01

    Full Text Available The Positive–Negative Sex-Role Inventory (PN-SRI assesses gender identity. The aim of this study was to evaluate the validity and reliability of a Swedish version of the PN-SRI in a population of 70-year-olds within the Gothenburg H70-study in Sweden. The overarching objective of testing the PN-SRI within the H70-study was to evaluate its usability to further study gender identity in large population-based samples of older adults. A total of 1124 individuals participated in the psychometric testing. A sub-sample of these (n = 406 provided a comprehensive survey regarding societal norms on femininity and masculinity. Reliability and validity tests were performed using Cronbach’s Alpha and factor analyses. The Cronbach’s α coefficients (0.734–0.787 indicated a satisfactory level of internal consistency, and the four-factor model (Model 2 fitted the data at an acceptable level (root-mean-square error of approximation, RMSEA = 0.068, standardized root-mean-square residual, SRMR = 0.07. This cross-cultural adaptation of the PN-SRI indicates that it may be applicable in a Swedish research setting comprising older adults. Future research is needed to further test the psychometric properties of this scale. Adding the PN-SRI to population-based studies will contribute to providing a nuanced way of analyzing differences and similarities among men and women.

  13. Strong Depletion in Hybrid Perovskite p-n Junctions Induced by Local Electronic Doping.

    Science.gov (United States)

    Ou, Qingdong; Zhang, Yupeng; Wang, Ziyu; Yuwono, Jodie A; Wang, Rongbin; Dai, Zhigao; Li, Wei; Zheng, Changxi; Xu, Zai-Quan; Qi, Xiang; Duhm, Steffen; Medhekar, Nikhil V; Zhang, Han; Bao, Qiaoliang

    2018-04-01

    A semiconductor p-n junction typically has a doping-induced carrier depletion region, where the doping level positively correlates with the built-in potential and negatively correlates with the depletion layer width. In conventional bulk and atomically thin junctions, this correlation challenges the synergy of the internal field and its spatial extent in carrier generation/transport. Organic-inorganic hybrid perovskites, a class of crystalline ionic semiconductors, are promising alternatives because of their direct badgap, long diffusion length, and large dielectric constant. Here, strong depletion in a lateral p-n junction induced by local electronic doping at the surface of individual CH 3 NH 3 PbI 3 perovskite nanosheets is reported. Unlike conventional surface doping with a weak van der Waals adsorption, covalent bonding and hydrogen bonding between a MoO 3 dopant and the perovskite are theoretically predicted and experimentally verified. The strong hybridization-induced electronic coupling leads to an enhanced built-in electric field. The large electric permittivity arising from the ionic polarizability further contributes to the formation of an unusually broad depletion region up to 10 µm in the junction. Under visible optical excitation without electrical bias, the lateral diode demonstrates unprecedented photovoltaic conversion with an external quantum efficiency of 3.93% and a photodetection responsivity of 1.42 A W -1 . © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Enhanced Photoelectrocatalytic Activity of BiOI Nanoplate-Zinc Oxide Nanorod p-n Heterojunction.

    Science.gov (United States)

    Kuang, Pan-Yong; Ran, Jing-Run; Liu, Zhao-Qing; Wang, Hong-Juan; Li, Nan; Su, Yu-Zhi; Jin, Yong-Gang; Qiao, Shi-Zhang

    2015-10-19

    The development of highly efficient and robust photocatalysts has attracted great attention for solving the global energy crisis and environmental problems. Herein, we describe the synthesis of a p-n heterostructured photocatalyst, consisting of ZnO nanorod arrays (NRAs) decorated with BiOI nanoplates (NPs), by a facile solvothermal method. The product thus obtained shows high photoelectrochemical water splitting performance and enhanced photoelectrocatalytic activity for pollutant degradation under visible light irradiation. The p-type BiOI NPs, with a narrow band gap, not only act as a sensitizer to absorb visible light and promote electron transfer to the n-type ZnO NRAs, but also increase the contact area with organic pollutants. Meanwhile, ZnO NRAs provide a fast electron-transfer channel, thus resulting in efficient separation of photoinduced electron-hole pairs. Such a p-n heterojunction nanocomposite could serve as a novel and promising catalyst in energy and environmental applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. High-efficiency p-n junction oxide photoelectrodes for photoelectrochemical water splitting.

    Science.gov (United States)

    Liu, Zhifeng; Yan, Lu

    2016-11-16

    Development of all oxide p-n junctions makes a significant advancement in photoelectrode catalysis functional materials. In this article, we report the preparation of TiO 2 nanorod (NR)/Cu 2 O photoanodes via a simple hydrothermal method followed by an electrochemical deposition process. This facile synthesis route can simultaneously achieve uniform TiO 2 NR/Cu 2 O composite nanostructures and obtain varied amounts of Cu 2 O by controlling the deposition time. The photocurrent density of TiO 2 NR/Cu 2 O heterojunction photoanodes enhanced the photocatalytic activity with a photocurrent density of 5.25 mA cm -2 at 1.23 V versus RHE compared to pristine TiO 2 NR photoanodes under the same conditions. It is demonstrated that the presence of Cu 2 O has played an important role in expanding the spectral response region and reducing the photogenerated charge recombination rate. More importantly, the results provide new insights into the performance of all oxide p-n junctions as photoanodes for PEC water splitting.

  16. Electronic transmission through p-n and n-p-n junctions of graphene

    Energy Technology Data Exchange (ETDEWEB)

    Setare, M R [Department of Science of Bijar, University of Kurdistan, Bijar (Iran, Islamic Republic of); Jahani, D, E-mail: rezakord@ipm.co, E-mail: Dariush110@gmail.co [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-06-23

    In this paper, we first evaluate the electronic transmission of Dirac fermions into a p-n junction of gapped graphene and show that the final result depends on the sign of the refractive index, n. We also, by considering the appropriate wavefunctions in the region of the electrostatic potential, show that both transmission and the reflection probability turn out to be positive and less than unity instead of the negative transmission and higher than unity reflection coefficient commonly referred to as the Klein paradox. We then obtain the transmission probability corresponding to a special p-n junction for which there exists a region in which the low energy excitations of graphene acquire a finite mass and, interestingly, find that in this case the transmission is independent of the index of refraction, in contrast with the corresponding result for gapped graphene. We then discuss the validity of the solutions reported in some of the papers cited in this work which, considering the Buettiker formula, turn out to lead to the wrong results for conductivity.

  17. Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

    Science.gov (United States)

    Chavez, Ruben; Angst, Sebastian; Hall, Joseph; Maculewicz, Franziska; Stoetzel, Julia; Wiggers, Hartmut; Thanh Hung, Le; Van Nong, Ngo; Pryds, Nini; Span, Gerhard; Wolf, Dietrich E.; Schmechel, Roland; Schierning, Gabi

    2018-01-01

    In many industrial processes, a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against temperature induced failure. In our proof-of-principle demonstration, a p-n junction device made from nanocrystalline silicon is at least comparable in its efficiency and power output to conventional devices of the same material and fabrication process, but with the advantage of sustaining high hot side temperatures and oxidative atmosphere.

  18. Narrow-band light emission from a single carbon nanotube p-n diode

    Science.gov (United States)

    Kinoshita, Megumi; Mueller, Thomas; Steiner, Mathias; Perebeinos, Vasili; Bol, Ageeth; Farmer, Damon; Avouris, Phaedon

    2010-03-01

    We present the first observation of electroluminescence from electrostatically-generated carbon nanotube (CNT) p-n junctions[1]. While CNT optoelectronics has made much progress in recent years, observations of emission from electrically excited CNT devices have been limited to the high-bias regime and with low efficiency. Furthermore, the resulting broad linewidths are broad, making it difficult to investigate electronic levels and carrier dynamics. We find that p-n junctions allow for better carrier control at lower power inputs, resulting in emission with near-zero threshold, low self-heating and efficiency two to three orders of magnitude greater compared to previous device configurations. This yields higher signal-to-noise ratio and narrower linewidths (down to ˜35 meV) that allows us to identify localized excitonic transitions that have previously been observed only in photoluminescent studies. [1] T. Mueller, M. Kinoshita, M. Steiner, V. Perebeinos, A. Bol, D. Farmer, and Ph. Avouris, Nature Nanotech., web publication, November 15 2009.

  19. Doping of 6H-SiC pn structures by proton irradiation

    International Nuclear Information System (INIS)

    Strel'chuk, Anatoly M.; Lebedev, Alexandre A.; Kozlovski, Vitali V.; Savkina, Natali S.; Davydov, Denis V.; Solov'ev, Viktor V.; Rastegaeva, Marina G.

    1999-01-01

    The influence of proton irradiation on current-voltage characteristics, N d - N a values and parameters of deep centres in 6H-SiC pn structures grown by sublimation epitaxy has been studied. The irradiation was carried out with 8 MeV protons in the range of doses from 10 14 to 10 16 cm -2 . Irradiation with a dose of 3.6x10 14 cm -2 leaves the voltage drop at high forward currents (10 A/cm 2 ) practically unchanged. For higher irradiation dose of 1.8x10 15 cm -2 , the forward voltage drop and the degree of compensation in the samples increased ; partial annealing of the radiation defects and partial recovery of the electrical parameters occurred after annealing at T∼400-800 K. Irradiation with a dose of 5.4x10 15 cm -2 resulted in very high resistance in forward biased pn structures which remained high even after heating to 500 deg. C. It is suggested that proton irradiation causes decreasing of the lifetime and formation of an i- or an additional p-layer

  20. Study of the electroplated of Ni for betavoltaic battery using PN junction without seed layer

    Energy Technology Data Exchange (ETDEWEB)

    Uhm, Young Rang; Kim, Jong Bum; Son, Kwang Jae [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Cho, Byoung Gun [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of)

    2015-10-15

    The mechanism of a nuclear battery is same as the P.N junction diode for solar cell application. The photovoltaic is operated by converting photons into electrical energy in the junction. In a betavoltaic battery, beta particles are collected and converted into electrical energy with a similar principle as a photovoltaic. If a radioisotope (RI) with a long half-life (over 100 years) is used, the lifetime of the power source is extended to as long as the half-life time of the RI. Hence, the power sources we describe could extend a system's operating life by several decades or even a century, during which time the system can gain learned behavior without worrying about the power turning off. The beta spectrum of {sup 63}Ni is below the radiation damage threshold (approximately 200 keV for Si) of semiconductors such as Si and SiC. Beta particles of 63Ni were deposited by electroplating on the Ni-foil substrate and attached on the trench P-N absorber with a spacing of 50 μm. The optimum total thickness of the 63Ni layer was determined to be about 2 μm, when regarding the minimum self-shielding effect of the beta-ray (β-ray). The optimum condition of the electroplating {sup 63}Ni was determined at current density of 20 mA/cm{sup 2}.

  1. The problem of crowd crimes: the approach of P.N. Obninskiy

    Directory of Open Access Journals (Sweden)

    Gorbatov D.S.

    2014-09-01

    Full Text Available We describe the specific approach to crowd crimes proposed by prominent Russian lawyer and public figure of the XIX century P.N. Obninskiy. We clarify its fundamental differences from other concepts of Russian and foreign psychologists and lawyers. Particular attention is paid to the P.N. Obninskiy treatment of possible sanity and responsibility of participants of mass cholera riots of the late XIX century in various regions of the Russian Empire. We reveal the moral potential of his views. Crowd as a social associations, the personality changes in the crowd, the crowd propensity to violate the law, the issue of punishment for crimes committed by it – these are some of the questions that interested the public opinion of the time. The article emphasizes that the lack of trust and lack of equal dialogue between representatives of different social groups have played a negative role in the development of «contagion morale», and later became reasons for the even more tragic events of Russian history.

  2. The X-ray mirror telescope and the pn-CCD detector of CAST

    CERN Document Server

    Kuster, M; Englhauser, J; Franz, J; Friedrich, P; Hartmann, R; Kang, D; Kotthaus, R; Lutz, Gerhard; Moralez, J; Serber, W; Strüder, L

    2004-01-01

    The Cern Axion Solar Telescope - CAST - uses a prototype 9 Tesla LHC superconducting dipole magnet to search for a hypothetical pseudoscalar particle, the axion, which was proposed by theory in the 1980s to solve the strong CP problem and which could be a dark matter candidate. In CAST a strong magnetic field is used to convert the solar axions to detectable photons via inverse Primakoff effect. The resulting X-rays are thermally distributed in the energy range of 1-7 keV and can be observed with conventional X-ray detectors. The most sensitive detector system of CAST is a pn-CCD detector originally developed for XMM-Newton combined with a Wolter I type X-ray mirror system. The combination of a focusing X-ray optics and a state of the art pn-CCD detector which combines high quantum efficiency, good spacial and energy resolution, and low background improves the sensitivity of the CAST experiment such that for the first time the axion photon coupling constant can be probed beyond the best astrophysical constrai...

  3. Study of the electroplated of Ni for betavoltaic battery using PN junction without seed layer

    International Nuclear Information System (INIS)

    Uhm, Young Rang; Kim, Jong Bum; Son, Kwang Jae; Cho, Byoung Gun

    2015-01-01

    The mechanism of a nuclear battery is same as the P.N junction diode for solar cell application. The photovoltaic is operated by converting photons into electrical energy in the junction. In a betavoltaic battery, beta particles are collected and converted into electrical energy with a similar principle as a photovoltaic. If a radioisotope (RI) with a long half-life (over 100 years) is used, the lifetime of the power source is extended to as long as the half-life time of the RI. Hence, the power sources we describe could extend a system's operating life by several decades or even a century, during which time the system can gain learned behavior without worrying about the power turning off. The beta spectrum of 63 Ni is below the radiation damage threshold (approximately 200 keV for Si) of semiconductors such as Si and SiC. Beta particles of 63Ni were deposited by electroplating on the Ni-foil substrate and attached on the trench P-N absorber with a spacing of 50 μm. The optimum total thickness of the 63Ni layer was determined to be about 2 μm, when regarding the minimum self-shielding effect of the beta-ray (β-ray). The optimum condition of the electroplating 63 Ni was determined at current density of 20 mA/cm 2

  4. Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes

    International Nuclear Information System (INIS)

    Tabe, Michiharu; Tan, Hoang Nhat; Mizuno, Takeshi; Muruganathan, Manoharan; Anh, Le The; Mizuta, Hiroshi; Nuryadi, Ratno; Moraru, Daniel

    2016-01-01

    We study low-temperature transport properties of two-dimensional (2D) Si tunnel diodes, or Si Esaki diodes, with a lateral layout. In ordinary Si Esaki diodes, interband tunneling current is severely limited because of the law of momentum conservation, while nanoscale Esaki diodes may behave differently due to the dopants in the narrow depletion region, by atomistic effects which release such current limitation. In thin-Si lateral highly doped pn diodes, we find clear signatures of interband tunneling between 2D-subbands involving phonon assistance. More importantly, the tunneling current is sharply enhanced in a narrow voltage range by resonance via a pair of a donor- and an acceptor-atom in the pn junction region. Such atomistic behavior is recognized as a general feature showing up only in nanoscale tunnel diodes. In particular, a donor-acceptor pair with deeper ground-state energies is likely to be responsible for such a sharply enhanced current peak, tunable by external biases.

  5. New Circumstellar Sources of PO and PN: The Increasing Role of Phosphorus Chemistry in Oxygen-rich Stars

    Science.gov (United States)

    Ziurys, L. M.; Schmidt, D. R.; Bernal, J. J.

    2018-04-01

    PO and PN have been newly identified in several oxygen-rich circumstellar envelopes, using the Submillimeter Telescope of the Arizona Radio Observatory. The J = 5 → 4 and J = 6 → 5 transitions of PN near 235 and 282 GHz, and the lambda doublets originating in the J = 5.5 → 4.5 and J = 6.5 → 5.5 lines of PO at 240 and 284 GHz, have been detected toward the shells of asymptotic giant branch (AGB) stars TX Cam and R Cas. A similar set of lines has been observed toward the supergiant NML Cyg, and new transitions of these two molecules were also measured toward the AGB star IK Tau. Along with the previous data from VY Canis Majoris (VY CMa), these spectral lines were analyzed using the non-local thermodynamic equilibrium (non-LTE) circumstellar modeling code, ESCAPADE. For the AGB stars, peak abundances found for PN and PO were f ∼ (1–2) × 10‑8 and (0.5–1) × 10‑7, respectively, while those for the supergiants were f(PN) ∼ (0.3–0.7) × 10‑8 and f(PO) ∼ (5–7) × 10‑8. PN was well modeled with a spherical radial distribution, suggesting formation near the stellar photosphere, perhaps enhanced by shocks. PO was best reproduced by a shell model, indicating a photochemical origin, except for VY CMa. Overall, the abundance of PO is a factor of 5–20 greater than that of PN. This study suggests that phosphorus-bearing molecules are common in O-rich envelopes, and that a significant amount of phosphorus (>20%) remains in the gas phase.

  6. Pharmacological characterisation of the highly NaV1.7 selective spider venom peptide Pn3a

    OpenAIRE

    Deuis, J. R.; Dekan, Z.; Wingerd, J. S.; Smith, J. J.; Munasinghe, N. R.; Bhola, R. F.; Imlach, W. L.; Herzig, V.; Armstrong, D. A.; Rosengren, K. J.; Bosmans, F.; Waxman, S. G.; Dib-Hajj, S. D.; Escoubas, P.; Minett, M. S.

    2017-01-01

    Human genetic studies have implicated the voltage-gated sodium channel NaV1.7 as a therapeutic target for the treatment of pain. A novel peptide, μ-theraphotoxin-Pn3a, isolated from venom of the tarantula Pamphobeteus nigricolor, potently inhibits NaV1.7 (IC50 0.9 nM) with at least 40-1000-fold selectivity over all other NaV subtypes. Despite on-target activity in small-diameter dorsal root ganglia, spinal slices, and in a mouse model of pain induced by NaV1.7 activation, Pn3a alone displayed...

  7. Pharmacological characterisation of the highly NaV1.7 selective spider venom peptide Pn3a

    OpenAIRE

    Jennifer R. Deuis; Zoltan Dekan; Joshua S. Wingerd; Jennifer J. Smith; Nehan R. Munasinghe; Rebecca F. Bhola; Wendy L. Imlach; Volker Herzig; David A. Armstrong; K. Johan Rosengren; Frank Bosmans; Stephen G. Waxman; Sulayman D. Dib-Hajj; Pierre Escoubas; Michael S. Minett

    2017-01-01

    Human genetic studies have implicated the voltage-gated sodium channel NaV1.7 as a therapeutic target for the treatment of pain. A novel peptide, ?-theraphotoxin-Pn3a, isolated from venom of the tarantula Pamphobeteus nigricolor, potently inhibits NaV1.7 (IC50 0.9?nM) with at least 40?1000-fold selectivity over all other NaV subtypes. Despite on-target activity in small-diameter dorsal root ganglia, spinal slices, and in a mouse model of pain induced by NaV1.7 activation, Pn3a alone displayed...

  8. Integrated CLOS and PN Guidance for Increased Effectiveness of Surface to Air Missiles

    Directory of Open Access Journals (Sweden)

    Binte Fatima Tuz ZAHRA

    2017-06-01

    Full Text Available In this paper, a novel approach has been presented to integrate command to line-of-sight (CLOS guidance and proportional navigation (PN guidance in order to reduce miss distance and to increase the effectiveness of surface to air missiles. Initially a comparison of command to line-of-sight guidance and proportional navigation has been presented. Miss distance, variation of angle-of-attack, normal and lateral accelerations and error of missile flight path from direct line-of-sight have been used as noteworthy criteria for comparison of the two guidance laws. Following this comparison a new approach has been proposed for determining the most suitable guidance gains in order to minimize miss distance and improve accuracy of the missile in delivering the warhead, while using CLOS guidance. This proposed technique is based on constrained nonlinear minimization to optimize the guidance gains. CLOS guidance has a further limitation of significant increase in normal and lateral acceleration demands during the terminal phase of missile flight. Furthermore, at large elevation angles, the required angle-of-attack during the terminal phase increases beyond design specifications. Subsequently, a missile with optical sensors only and following just the CLOS guidance has less likelihood to hit high speed targets beyond 45º in elevation plane. A novel approach has thus been proposed to overcome such limitations of CLOS-only guidance for surface to air missiles. In this approach, an integrated guidance algorithm has been proposed whereby the initial guidance law during rocket motor burnout phase remains CLOS, whereas immediately after this phase, the guidance law is automatically switched to PN guidance. This integrated approach has not only resulted in slight increase in range of the missile but also has significantly improved its likelihood to hit targets beyond 30 degrees in elevation plane, thus successfully overcoming various limitations of CLOS

  9. Air-stable, solution-processed oxide p-n heterojunction ultraviolet photodetector.

    Science.gov (United States)

    Kim, Do Young; Ryu, Jiho; Manders, Jesse; Lee, Jaewoong; So, Franky

    2014-02-12

    Air-stable solution processed all-inorganic p-n heterojunction ultraviolet photodetector is fabricated with a high gain (EQE, 25 300%). Solution-processed NiO and ZnO films are used as p-type and n-type ultraviolet sensitizing materials, respectively. The high gain in the detector is due to the interfacial trap-induced charge injection that occurs at the ITO/NiO interface by photogenerated holes trapped in the NiO film. The gain of the detector is controlled by the post-annealing temperature of the solution-processed NiO films, which are studied by X-ray photoelectron spectroscopy (XPS).

  10. Measurement of the Induced Proton Polarization Pn in the 12C(e, e', p) reaction

    International Nuclear Information System (INIS)

    Woo, R.J.; Barkhuff, David; Bertozzi, William; Jian-ping Chen; Dan Dale; G. Dodson; K.A. Dow; Marty Epstein; Manouchehr Farkhondeh; Mike Finn; Shalev Gilad; Mark K. Jones; Kyungseon Joo; James Kelly; Stanley Kowalski; Bob Lourie; Richard Madey; Dimitri Margaziotis; Pete Markowitz; Justin McIntyre; Christoph Mertz; Brian Milbrath; Joseph Mitchell; Charles F. Perdrisat; Vina Punjabi; Paul Rutt; Adam Sarty; D. Tieger; C. Tschalaer; William Turchinetz; Paul E. Ulmer; S.P. Van Verst; C. Vellidis; Glen Warren; Lawrence Weinstein

    1998-01-01

    The first measurements of the induced proton polarization Pn for the 12C(e,e',p) reaction are reported. The experiment was performed at quasifree kinematics for energy and momentum transfer (w,q) = (294 MeV, 765 MeV/c) and sampled a missing momentum range of 0-250 MeV/c. The induced polarization arises from final-state interactions and for these kinematics is dominated by the real part of the spin-orbit optical potential. The distorted-wave impulse approximation provides good agreement with data for the 1 p3/2 shell. The data for the continuum suggest that both the 1s1/2 shell and underlying l > 1 configurations contribute

  11. 1H(d,2p)n reaction at 2 GeV deuteron energy

    International Nuclear Information System (INIS)

    Erohuml, J.; Fodor, Z.; Koncz, P.; Seres, Z.; Perdrisat, C.F.; Punjabi, V.; Boudard, A.; Bonin, B.; Garcon, M.; Lombard, R.; Mayer, B.; Terrien, Y.; Tomasi, E.; Boivin, M.; Yonnet, J.; Bhang, H.C.; Youn, M.; Belostotsky, S.L.; Grebenuk, O.G.; Nikulin, V.N.; Kudin, L.G.

    1994-01-01

    The 1 H(d,2p)n deuteron breakup reaction was measured at 2 GeV deuteron energy in a kinematically complete experiment. Fivefold differential cross sections are given in a wide range of kinematical variables and analyzed in terms of impulse approximation and NN rescattering. The deuteron momentum density was determined and deviations were found depending on the value of the four-momentum transfer |t| in the scattering process. At low |t| the momentum densities are in good agreement with the impulse approximation whereas large discrepancies were found above q∼200 MeV/c when the four-momentum transfer was large. Various possible origins of the anomalous behavior at high q values are discussed

  12. Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

    DEFF Research Database (Denmark)

    Chavez, Ruben; Angst, Sebastian; Hall, Joseph

    2017-01-01

    In many industrial processes a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited...... in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring...... in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against...

  13. Dual-gate operation and carrier transport in SiGe p-n junction nanowires

    Science.gov (United States)

    Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

    2017-11-01

    We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

  14. Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

    International Nuclear Information System (INIS)

    SHUL, RANDY J.; ZHANG, LEI; BACA, ALBERT G.; WILLISON, CHRISTI LEE; HAN, JUNG; PEARTON, S.J.; REN, F.

    1999-01-01

    Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl 2 /BCl 3 /Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions (≤ 500 W), pressures ≥2 mTorr, and at ion energies below approximately -275 V

  15. Study of seed layer effect in nuclear battery with P-N diode junction

    Energy Technology Data Exchange (ETDEWEB)

    Uhm, Young Rang; Son, Kwang Jae; Lee, Jun Sig [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Choi, Byoung Gun [Kookmin Univ., Seoul (Korea, Republic of)

    2014-10-15

    A nuclear battery with diode junction is a device that converts nuclear radiation directly to electric power. The mechanism of a nuclear battery is same as the P-N junction diode for solar cell application. The photovoltaic is operated by converted photons to electrical energy in the junction. In betavoltaic battery, beta particles are collected and converted to electrical energy as similar principle as photovoltaic. A very low current, order of nano or micro amps, is generated in devices. If a radioisotope (RI) with a long halflife (over 50 years) is used, a lifetime of a power source is extended as long as halflife time of RI.. Some special applications require long-lived compact power sources. These include space equipment, sensors in remote locations (space, underground, etc.), and implantable medical devices. Conventionally, these sources rely on converting chemical energy to electricity. This means they require a large storage of chemical 'fuel' since the amount of energy released per reaction is small. The nuclear battery is a novel solution to solve the power needs of these applications. For the {sup 63}Ni beta-source we used, the half-life is 100.2 years. Hence, the power sources we describe could extend a system's operating life by several decades or even a century, during which time the system could gain learned behavior without worrying about the power turning off. Radioactive thin-film-based power sources also have energy density orders of magnitude higher than chemical-reaction-based energy sources. In this study, we fabricate nuclear battery using {sup 63}Ni source with diode junction, and studied seed layer effect for optimization of structure of p-n junction.

  16. Sb2S3:C/CdS p-n junction by laser irradiation

    International Nuclear Information System (INIS)

    Arato, A.; Cardenas, E.; Shaji, S.; O'Brien, J.J.; Liu, J.; Castillo, G. Alan; Das Roy, T.K.; Krishnan, B.

    2009-01-01

    In this paper, we report laser irradiated carbon doping of Sb 2 S 3 thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb 2 S 3 thin films of approximately 0.5 μm in thickness. Sb 2 S 3 thin films were prepared from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 deg. C for 5 h and the films obtained were highly resistive. These C/Sb 2 S 3 thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb 2 S 3 :C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb 2 S 3 :C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl 2 , sodium citrate, NH 4 OH and thiourea at 70 deg. C . On the CdS film, Sb 2 S 3 /C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb 2 S 3 side facing the beam. The p-n junction formed by p-Sb 2 S 3 :C and n-type CdS showed V oc = 500 mV and J sc = 0.5 mA/cm 2 under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing

  17. In-situ study of pn-heterojunction interface states in organic thin film transistors

    International Nuclear Information System (INIS)

    Ye, Rongbin; Ohta, Koji; Baba, Mamoru

    2014-01-01

    In this paper, we have investigated the density of pn-heterojunction interface states by evaluating the threshold voltage shift with in-situ measurement of electrical characteristics of a sandwich fluorinated copper phthalocyanine/pentacene thin film transistor with various thicknesses of pentacene thin films. A threshold voltage (V T ) undergoes a significant shift from + 20.6 to + 0.53 V with increasing the thickness of pentacene. When the thickness of pentacene is more than a critical thickness of 15 nm, V T undergoes hardly any shift. On the other hand, the value of mobility is lightly decreased with increasing the thickness of pentacene due to the effect of the bulk current. Thus the V T shift is attributed to the increase of drain current in the sandwich device. In order to explain the V T shift, a model was assumed in the linear region of thin film transistor operation and the V T shift agrees with a tan −1 function of film thickness. The total charge density (Q 0 ) of 1.53 × 10 −7 C/cm 2 (9.56 × 10 11 electrons or holes/cm 2 ) was obtained. Furthermore, the V T shift and Q 0 could be adjusted by selecting a p-type semiconductor. - Highlights: • A threshold voltage was in-situ measured in an organic sandwich thin film transistor. • Density of pn-heterojunction interface states by evaluating the threshold voltage shift. • The threshold voltage shift attributes to the increase of drain current. • In order to explain the threshold voltage shift, a model was assumed

  18. LM1-64: a Newly Reported Lmc-Pn with WR Nucleus

    Science.gov (United States)

    Pena, M.; Olguin, L.; Ruiz, M. T.; Torres-Peimbert, S.

    1993-05-01

    The object LM1-64 was reported by Lindsay & Mullan (1963, Irish Astron. J., 5, 51) as a probable PN in the LMC. Optical and UV spectra taken by us confirm that suggestion. LM1-64 is a high excitation planetary nebulae which shows evidence of having a WC central star. Broad stellar emission at lambda 4650 is detected in the optical spectrum obtained with the CTIO 4m telescope, in 1989. A UV spectrum in the range from 1200 Angstroms to 2000 Angstroms was obtained with IUE in 1990. We have measured all the emission line fluxes available and determined values for the physical conditions and chemical abundances of the nebular ionized gas. The derived values are T(OIII) = 14000K, log He/H = 11.05, log C/H = 9.48, log O/H = 8.55 and log Ne/H = 7.94. LM1-64 shows a large C enhancement in the envelope as result of the central star activity, while He, O and Ne are comparable to the average values reported for the LMC-PNe (Monk, Barlow & Clegg, 1988, MNRAS, 234, 583). We have estimated the He II Zanstra temperature of the central star to be ~ 80,000 K. This temperature is much higher than the values reported for the known LMC-PNe with WR nucleus that Monk et al. have classified as W4 to W8. The only other high temperature WR nucleus in a LMC-PN is N66 which recently showed evidence of undergoing a WR episode (Torres-Peimbert, Ruiz, Peimbert & Pe\\ na, 1993, IAU Symp. 155, eds. A. Acker & R. Weinberger, in press).

  19. In-situ study of pn-heterojunction interface states in organic thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Rongbin, E-mail: ye@iwate-u.ac.jp; Ohta, Koji; Baba, Mamoru

    2014-03-03

    In this paper, we have investigated the density of pn-heterojunction interface states by evaluating the threshold voltage shift with in-situ measurement of electrical characteristics of a sandwich fluorinated copper phthalocyanine/pentacene thin film transistor with various thicknesses of pentacene thin films. A threshold voltage (V{sub T}) undergoes a significant shift from + 20.6 to + 0.53 V with increasing the thickness of pentacene. When the thickness of pentacene is more than a critical thickness of 15 nm, V{sub T} undergoes hardly any shift. On the other hand, the value of mobility is lightly decreased with increasing the thickness of pentacene due to the effect of the bulk current. Thus the V{sub T} shift is attributed to the increase of drain current in the sandwich device. In order to explain the V{sub T} shift, a model was assumed in the linear region of thin film transistor operation and the V{sub T} shift agrees with a tan{sup −1} function of film thickness. The total charge density (Q{sub 0}) of 1.53 × 10{sup −7} C/cm{sup 2} (9.56 × 10{sup 11} electrons or holes/cm{sup 2}) was obtained. Furthermore, the V{sub T} shift and Q{sub 0} could be adjusted by selecting a p-type semiconductor. - Highlights: • A threshold voltage was in-situ measured in an organic sandwich thin film transistor. • Density of pn-heterojunction interface states by evaluating the threshold voltage shift. • The threshold voltage shift attributes to the increase of drain current. • In order to explain the threshold voltage shift, a model was assumed.

  20. Quasielastic scattering using the (p,n) reaction at 795 MeV

    International Nuclear Information System (INIS)

    Prout, D.L.

    1992-08-01

    A survey in nuclear mass and in momentum transfer of cross sections and analyzing powers in the quasielastic region has been made using the (p,n) reaction. The measurements were performed at an energy of 795 MeV at the Neutron Time of Flight Facility and the Weapons Neutron Research line at LAMPF. The (p,n) reaction isolates the isovector (rvec τ 1 · rvec τ 2 ) part of the nucleon nucleus interaction. Standard models of quasielastic scattering were able to describe the magnitude and shape of the double differential cross sections very well if account was taken of a significant background from double scattering. In contrast, the quasielastic response was shifted to much higher excitation energy than what was expected. This was true for all nuclei at moderate to large momenta transfers. Neither the Coulomb energy shift nor RPA calculations with the standard particle hole (p-h) interactions could account for this large shift. The data argue for a repulsive interaction in both the transverse and longitudinal channels of the p-h interaction. A suppression of the quasielastic analyzing power compared to the free nucleon nucleon analyzing power was found in nat C at all the angles measured. The same region in nat Pb showed little or no suppression. Part of the suppression in the nat C data may be accounted for by relativistic models of the nucleus employing large vector and scalar potentials with an effective mass of .85 times the free nucleon mass. The relatively larger contribution of double scattering nat Pb(rvec p, n) than to nat C(rvec p, n) may account for the difference in analyzing power for these two targets in the quasielastic region

  1. The effect of PN-1, a Traditional Chinese Prescription, on the Learning and Memory in a Transgenic Mouse Model of Alzheimer’s Disease

    Directory of Open Access Journals (Sweden)

    Zhi-Gang Yao

    2013-01-01

    Full Text Available Traditional Chinese Medicine (TCM is a complete medical system that has been practiced for more than 3000 years. Prescription number 1 (PN-1 consists of several Chinese medicines and is designed according to TCM theories to treat patients with neuropsychiatric disorders. The evidence of clinical practice suggests the benefit effects of PN-1 on cognitive deficits of dementia patients. We try to prove and explain this by using contemporary methodology and transgenic animal models of Alzheimer’s disease (AD. The behavioral studies were developed to evaluate the memory of transgenic animals after intragastric administration of PN-1 for 3 months. Amyloid beta-protein (Aβ neuropathology was quantified using immunohistochemistry and ELISA. The western blotting was used to detect the levels of plasticity associated proteins. The safety of PN-1 on mice was also assessed through multiple parameters. Results showed that PN-1 could effectively relieve learning and memory impairment of transgenic animals. Possible mechanisms showed that PN-1 could significantly reduce plaque burden and Aβ levels and boost synaptic plasticity. Our observations showed that PN-1 could improve learning and memory ability through multiple mechanisms without detectable side effects on mice. We propose that PN-1 is a promising alternative treatment for AD in the future.

  2. C-H and H-H Bond Activation via Ligand Dearomatization/Rearomatization of a PN3P-Rhodium(I) Complex

    KAUST Repository

    Huang, Kuo-Wei; Wang, Yuan; Zheng, Bin; Pan, Yupeng; Pan, Chengling; He, Lipeng

    2015-01-01

    A neutral complex PN3P-Rh(I)Cl (2) was prepared from a reaction of the PN3P pincer ligand (1) with [Rh(COD)Cl]2 (COD = 1,5-cyclooctadiene). Upon treatment with a suitable base, H–H and Csp2–H activation reactions can be achieved through

  3. Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

    KAUST Repository

    Wang, Zhenwei; He, Xin; Zhang, Xixiang; Alshareef, Husam N.

    2016-01-01

    A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10

  4. K0 production in pN collisions at Ep=70 GeV in the deep-fragmentation region

    International Nuclear Information System (INIS)

    1996-01-01

    The quasiexclusive production of neutral kaons in pN collisions is investigated with the SPHINX detector irradiated by a 70-GeV proton beam from the IHEP accelerator. The cross sections for K0 production and the parameters of the corresponding differential distributions are determined for the deep-fragmentation region (xF0.79-0.86) of this interaction

  5. Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

    NARCIS (Netherlands)

    Buchs, G.; Barkelid, K.M.; Bagiante, S.; Steele, G.A.; Zwiller, V.

    2011-01-01

    We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with

  6. Negative differential resistance observed from vertical p+-n+ junction device with two-dimensional black phosphorous

    Science.gov (United States)

    Lee, Daeyeong; Jang, Young Dae; Kweon, Jaehwan; Ryu, Jungjin; Hwang, Euyheon; Yoo, Won Jong; Samsung-SKKU Graphene/2D Center (SSGC) Collaboration

    A vertical p+-n+ homojunction was fabricated by using black phosphorus (BP) as a van der Waals two-dimensional (2D) material. The top and bottom layers of the materials were doped by chemical dopants of gold chloride (AuCl3) for p-type doping and benzyl viologen (BV) for n-type doping. The negative differential resistance (NDR) effect was clearly observed from the output curves of the fabricated BP vertical devices. The thickness range of the 2D material showing NDR and the peak to valley current ratio of NDR are found to be strongly dependent on doping condition, gate voltage, and BP's degradation level. Furthermore, the carrier transport of the p+-n+ junction was simulated by using density functional theory (DFT) and non-equilibrium Green's function (NEGF). Both the experimental and simulation results confirmed that the NDR is attributed to the band-to-band tunneling (BTBT) across the 2D BP p+-n+ junction, and further quantitative details on the carrier transport in the vertical p+-n+ junction devices were explored, according to the analyses of the measured transfer curves and the DFT simulation results. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2013R1A2A2A01015516).

  7. Train Practical Nurses to Become Registered Nurses: A Survey of the PN Point of View. Research Report Number 1.

    Science.gov (United States)

    Gilpatrick, Eleanor

    To secure information about the characteristics of the practical nurse population and their opinions about registered nurse preparation, questionnaires were distributed to 2,923 practical nurses employed by the New York City Municipal Hospitals. Usable questionnaires numbered 2,361 or 81 percent of the employed PN population. Approximately 9…

  8. Experimental method for investigating γd→pn photodisintegration reaction on the linearly polarized photon beam of the Erevan synchrotron

    International Nuclear Information System (INIS)

    Agababyan, K.Sh.; Adamyan, F.V.; Ajrapetyan, A.V.

    1985-01-01

    The experimental method for measuring the asymmetry of the γd → pn photodisintegration reaction on the linearly polarized photon beam of the Erevan synchrotron is described. The results of Monte Carlo calculations, the calibration of apparatus, the procedure of measurements and experimental data processing are repored

  9. Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

    Directory of Open Access Journals (Sweden)

    Ji-Hyeon Park

    2014-01-01

    Full Text Available Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111 substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

  10. Tropical calcific pancreatitis and its association with CTRC and SPINK1 (p.N34S) variants.

    NARCIS (Netherlands)

    Derikx, M.H.; Szmola, R.; Morsche, R.H.M. te; Sunderasan, S.; Chacko, A.; Drenth, J.P.H.

    2009-01-01

    BACKGROUND: Tropical calcific pancreatitis (TCP) is a relatively common form of chronic pancreatitis in parts of Asia and Africa. The SPINK1 variant p.N34S is strongly associated with TCP, but other genetic factors remain to be defined. Chymotrypsinogen C (CTRC) degrades trypsinogen and

  11. Uppermost mantle seismic velocity and anisotropy in the Euro-Mediterranean region from Pn and Sn tomography

    Science.gov (United States)

    Díaz, J.; Gil, A.; Gallart, J.

    2013-01-01

    In the last 10-15 years, the number of high quality seismic stations monitoring the Euro-Mediterranean region has increased significantly, allowing a corresponding improvement in structural constraints. We present here new images of the seismic velocity and anisotropy variations in the uppermost mantle beneath this complex area, compiled from inversion of Pn and Sn phases sampling the whole region. The method of Hearn has been applied to the traveltime arrivals of the International Seismological Center catalogue for the time period 1990-2010. A total of 579 753 Pn arrivals coming from 12 377 events recorded at 1 408 stations with epicentral distances between 220 km and 1 400 km have been retained after applying standard quality criteria (maximum depth, minimum number of recordings, maximum residual values …). Our results show significant features well correlated with surface geology and evidence the heterogeneous character of the Euro-Mediterranean lithosphere. The station terms reflect the existence of marked variations in crustal thickness, consistent with available Moho depths inferred from active seismic experiments. The highest Pn velocities are observed along a continuous band from the Po Basin to the northern Ionian Sea. Other high velocity zones include the Ligurian Basin, the Valencia Trough, the southern Alboran Sea and central part of the Algerian margin. Most significant low-velocity values are associated to orogenic belts (Betics, Pyrenees, Alps, Apennines and Calabrian Arc, Dinarides-Hellenides), and low-velocity zones are also identified beneath Sardinia and the Balearic Islands. The introduction of an anisotropic term enhances significantly the lateral continuity of the anomalies, in particular in the most active tectonic areas. Pn anisotropy shows consistent orientations subparallel to major orogenic structures, such as Betics, Apennines, Calabrian Arc and Alps. The Sn tomographic image has lower resolution but confirms independently most of the

  12. Physical Properties of the Very Young PN Hen3-1357 (Stingray Nebula) Based on Multiwavelength Observations

    Energy Technology Data Exchange (ETDEWEB)

    Otsuka, Masaaki [Institute of Astronomy and Astrophysics Academia Sinica, 11F of Astronomy-Mathematics Building, AS/NTU. No.1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, R.O.C. (China); Parthasarathy, M. [Indian Institute of Astrophysics, II B lock Koramangala, Bangalore 560034, Karnataka (India); Tajitsu, A. [Subaru Telescope, National Astronomical Observatory of Japan, 650 N Aohoku Place, Hilo, HI 96720 (United States); Hubrig, S., E-mail: otsuka@asiaa.sinica.edu.tw [Leibniz-Institut fuer Astrophysik Potsdam (AIP) An der Sternwarte 12, D-14482 Potsdam (Germany)

    2017-03-20

    We carried out a detailed analysis of the interesting and important very young planetary nebula (PN) Hen3-1357 (Stingray Nebula) based on a unique data set of optical to far-IR spectra and photometric images. We calculated the abundances of nine elements using collisionally excited lines (CELs) and recombination lines (RLs). The RL C/O ratio indicates that this PN is O-rich, which is also supported by the detection of the broad 9/18 μ m bands from amorphous silicate grains. The observed elemental abundances can be explained by asymptotic giant branch (AGB) nucleosynthesis models for initially 1–1.5 M {sub ⊙} stars with Z = 0.008. The Ne overabundance might be due to the enhancement of {sup 22}Ne isotope in the He-rich intershell. Using the spectrum of the central star synthesized by Tlusty as the ionization/heating source of the PN, we constructed the self-consistent photoionization model with Cloudy to the observed quantities and derived the gas and dust masses, dust-to-gas mass ratio, and core mass of the central star. About 80% of the total dust mass is from warm–cold dust component beyond ionization front. Comparison with other Galactic PNe indicates that Hen3-1357 is an ordinary amorphous silicate-rich and O-rich gas PN. Among other studied PNe, IC4846 shows many similarities in properties of the PN to Hen3-1357, although their post-AGB evolution is quite different from each other. Further monitoring of observations and comparisons with other PNe such as IC4846 are necessary to understand the evolution of Hen3-1357.

  13. Study on synthesis, kit formulation and chemical kinetics of dissociation of 99mTc labeled PnAO biotin complex

    International Nuclear Information System (INIS)

    Afshan, A.; Jafri, S.R.A.; Maecke, H.

    2004-01-01

    Full text: A bifunctional ligand of PnAO-biotin has recently been synthesized, with a better percentage yield of 63% in the presence of newly developed coupling agent 0-(7-azabenzotriazol-1-yl)-1,1,3,3-tetramethyluronium hexaflorophos phate (HATU). Then lyophilized kit with 150μg of PnAObiotin has been developed and labeled with high specific activity of technetium-99m (2500-3000MBq) to get maximum radiochemical purity of 99mTc-PnAO-biotin complex i.e. > 97%. The association of avidin and streptavidin is among the strongest known non-covalent protein ligand interaction Ka 1015 M-1 and 1013 M-1 respectively. We measured the dissociation rate constant of PnAO-biotin from avidin and streptavidin challenged with excess of cold biotin. For the separation of bound and free-labeled biotin we employed ultrafilteration technique. The results of these experiments demonstrated that the non-covalent binding between 99mTc-PnAO-biotin with avidin and 99mTc-PnAO-biotin with streptavidin is more than 99%. Both biotin-binding proteins exhibited a faster initial phase and the rate of dissociation of 99mTc-PnAO-biotin with avidin is found to be 8.2x10-8 at 250C and 2.6x10-7 at 370C while the rate of dissociation 99mTc-PnAO-biotin from streptavidin is found to be 6x10-7 at 250C and 1.06x10-6 at 370C. The in-vitro study of the kinetics of dissociation exhibits the strong interaction of 99mTc-PnAO-biotin complex with both proteins, which suggests that this bifunctional PnAO-biotin ligand can be used for tumor localization with monoclonal antibodies to achieve high tumor to non-tumor ratio. (author)

  14. Pronounced Photovoltaic Response from Multilayered Transition-Metal Dichalcogenides PN-Junctions.

    Science.gov (United States)

    Memaran, Shahriar; Pradhan, Nihar R; Lu, Zhengguang; Rhodes, Daniel; Ludwig, Jonathan; Zhou, Qiong; Ogunsolu, Omotola; Ajayan, Pulickel M; Smirnov, Dmitry; Fernández-Domínguez, Antonio I; García-Vidal, Francisco J; Balicas, Luis

    2015-11-11

    Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s) can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far points toward a strong interaction with light, which contrasts with the small photovoltaic efficiencies η ≤ 1% extracted from bulk crystals or exfoliated monolayers. Here, we evaluate the potential of these compounds by studying the photovoltaic response of electrostatically generated PN-junctions composed of approximately 10 atomic layers of MoSe2 stacked onto the dielectric h-BN. In addition to ideal diode-like response, we find that these junctions can yield, under AM-1.5 illumination, photovoltaic efficiencies η exceeding 14%, with fill factors of ~70%. Given the available strategies for increasing η such as gap tuning, improving the quality of the electrical contacts, or the fabrication of tandem cells, our study suggests a remarkable potential for photovoltaic applications based on TMDs.

  15. New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

    Science.gov (United States)

    Aivazian, Grant; Sun, Dong; Jones, Aaron; Ross, Jason; Yao, Wang; Cobden, David; Xu, Xiaodong

    2012-02-01

    The remarkable electrical and optical properties of graphene make it a promising material for new optoelectronic applications. However, one important, but so far unexplored, property is the role of hot carriers in charge and energy transport at graphene interfaces. Here we investigate the photocurrent (PC) dynamics at a tunable graphene pn junction using ultrafast scanning PC microscopy. Pump-probe measurements show a temperature dependent relaxation time of photogenerated carriers that increases from 1.5ps at 290K to 4ps at 20K; while the amplitude of the PC is independent of the lattice temperature. These observations imply that it is hot carriers, not phonons, which dominate ultrafast energy transport. Gate dependent measurements show many interesting features such as pump induced saturation, enhancement, and sign reversal of probe generated PC. These observations reveal that the underlying PC mechanism is a combination of the thermoelectric and built-in electric field effects. Our results enhance the understanding of non-equilibrium electron dynamics, electron-electron interactions, and electron-phonon interactions in graphene. They also determine fundamental limits on ultrafast device operation speeds (˜500 GHz) for graphene-based photodetectors.

  16. Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes

    Directory of Open Access Journals (Sweden)

    Si eLi

    2015-02-01

    Full Text Available Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6 m (0.78 eV was observed besides the band-to-band line (~1.1eV under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of boron atoms into silicon crystal lattice.

  17. A van der Waals pn heterojunction with organic/inorganic semiconductors

    International Nuclear Information System (INIS)

    He, Daowei; Yang, Ziyi; Wu, Bing; Xu, Bingchen; Zhang, Yuhan; Li, Yun; Shi, Yi; Wang, Xinran; Pan, Yiming; Wang, Baigeng; Nan, Haiyan; Luo, Xiaoguang; Ni, Zhenhua; Gu, Shuai; Zhu, Jia; Chai, Yang

    2015-01-01

    van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate the hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C 8 -BTBT) and n-type MoS 2 . We find that few-layer C 8 -BTBT molecular crystals can be grown on monolayer MoS 2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C 8 -BTBT/MoS 2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling, and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 10 5 at the room temperature. Our devices also exhibit photovoltaic responses with a power conversion efficiency of 0.31% and a photoresponsivity of 22 mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents

  18. A van der Waals pn heterojunction with organic/inorganic semiconductors

    Science.gov (United States)

    He, Daowei; Pan, Yiming; Nan, Haiyan; Gu, Shuai; Yang, Ziyi; Wu, Bing; Luo, Xiaoguang; Xu, Bingchen; Zhang, Yuhan; Li, Yun; Ni, Zhenhua; Wang, Baigeng; Zhu, Jia; Chai, Yang; Shi, Yi; Wang, Xinran

    2015-11-01

    van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate the hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling, and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with a power conversion efficiency of 0.31% and a photoresponsivity of 22 mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

  19. A van der Waals pn heterojunction with organic/inorganic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    He, Daowei; Yang, Ziyi; Wu, Bing; Xu, Bingchen; Zhang, Yuhan; Li, Yun; Shi, Yi, E-mail: yshi@nju.edu.cn, E-mail: xrwang@nju.edu.cn; Wang, Xinran, E-mail: yshi@nju.edu.cn, E-mail: xrwang@nju.edu.cn [National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Pan, Yiming; Wang, Baigeng [National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093 (China); Nan, Haiyan; Luo, Xiaoguang; Ni, Zhenhua [Department of Physics, Southeast University, Nanjing 211189 (China); Gu, Shuai; Zhu, Jia [College of Engineering and Applied Science, Nanjing University, Nanjing 210093 (China); Chai, Yang [Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong)

    2015-11-02

    van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate the hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C{sub 8}-BTBT) and n-type MoS{sub 2}. We find that few-layer C{sub 8}-BTBT molecular crystals can be grown on monolayer MoS{sub 2} by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C{sub 8}-BTBT/MoS{sub 2} vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling, and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 10{sup 5} at the room temperature. Our devices also exhibit photovoltaic responses with a power conversion efficiency of 0.31% and a photoresponsivity of 22 mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

  20. Nucleon fragmentation in pn and pp interactions compared with quark counting rules

    Energy Technology Data Exchange (ETDEWEB)

    Bakken, V.; Breivik, F.O.; Jacobsen, T. (Oslo Univ. (Norway). Fysisk Inst.)

    1981-11-01

    New data on longitudinal invariant structure functions Edsigma/dx for several low-psub(T) fragmentation processes in pn interactions at 19 GeV/c are presented, based on a bubble chamber study of pd collisions. The single-particle processes n..--> pi../sup + -/, p..--> pi../sup + -/, is investigated n..-->..p, n/p..-->..rho/sup 0/, p..-->..psub(inel) and p..--> delta../sup + +/(1232) as well as the dipion processes n..--> pi../sup -/..pi../sup -/, n..--> pi../sup +/..pi../sup +/, n..--> pi../sup +/..pi../sup -/ and p..--> pi../sup -/..pi../sup -/. Data of the authors on pp collisions at 19 GeV/c regarding p..--> pi../sup -/, p..-->..K/sup 0/sub(S) and p..--> lambda.. have also been considered. The structure functions of these processes are, in the fragmentation region, adequately fitted by Edsigma/dx ..cap alpha.. (1-xi such that sup(n). imilar fits are made to published data on hadron-neutron interactionseractions and ISR data on pp..-->..n+X. The results are compared with earlier data on proton fragmentation. The values of n show no energy dependence. They are in qualitative agreement with the recently formulated quark counting rules, but some quantitative disagreements are observed.

  1. Nucleon fragmentation in pn and pp interactions compared with quark counting rules

    Energy Technology Data Exchange (ETDEWEB)

    Bakken, V.; Breivik, F.O.; Jacobsen, T. (Oslo Univ. (Norway). Fysisk Inst.)

    1981-11-01

    New data on longitudinal invariant structure functions E dsigma/dx for several low-psub(T) fragmentation processes in pn interactions at 19 GeV/c are presented, based on a bubble chamber study of pd collisions. We investigate the single-particle processes n..--> pi..sup(+-), p..--> pi..sup(+-), n..-->..p, n/p..-->..p/sup 0/, p..-->..psub(i)sub(n)sub(e)sub(l) and p..--> delta../sup + +/(1232) as well as the dipion processes n..--> pi..-..pi..-, n..--> pi..+..pi..+, n..--> pi..+..pi..- and p..--> pi..-..pi..-. We have also considered our data on pp collisions at 19 GeV/c regarding p..--> pi..-, p..-->..Ksub(s)/sup 0/ and p..--> lambda... The structure functions of these processes are, in the fragmentation region, adequately fitted by Edsigma/dx approx. equal to (1- vertical stroke z vertical stroke )sup(n). Similar fits are made to published data on hadron-neutron interactions and ISR data on pp..-->..n+X. The results are compared with earlier data on proton fragmentation. The values of n show no energy dependence. They are in qualitative agreement with the recently formulated quark counting rules, but some quantitative disagreements are observed.

  2. Nucleon fragmentation in pn and pp interactions compared with quark counting rules

    International Nuclear Information System (INIS)

    Bakken, V.; Breivik, F.O.; Jacobsen, T.

    New data on longitudinal invariant structure functions Edσ/dx for several low p(sub T) fragmentation processes in pn interactions at 19 GeV/c are presented, based on a bubble chamber study of pd collisions. The single particle processes n→π +- , p→π +- , n→p, n/p→rho 0 , p→p(sub inel) and p→Δ ++ (1232) as well as the di-pion processes n→π - π - , n→π + π + , n→π + π - and p→π - π - have been investigated. Previously published data on pp collisions at 19 GeV/c regarding p→π - , p→K 0 (sub s) and p→Λ have also been considered. The structure functions of these processes in the fragmentation region are adequately fitted by Edσ/dx proportional to (1-/x/)(sup n). Similar fits are made to published data on hadron-neutron interactions and ISR-data on pp→n+X. The values of n show no energy dependence. They are in qualitative agreement with the recently formulated quark counting rules, but some quantitative disagreements are observed. (Auth.)

  3. Comparative analysis of photovoltaic principles governing dye-sensitized solar cells and p-n junctions

    Science.gov (United States)

    Bisquert, Juan; Garcia-Canadas, Jorge; Mora-Sero, Ivan; Palomares, Emilio

    2004-02-01

    We discuss a generalized model for a solar cell, and the realization with heterogeneous photochemical photovoltaic converters such as the dye-sensitized solar cell. The different steps involved in the conversion of photon energy to electrical energy, indicate that a key point to consider is maintaining the separation of Fermi levels in the selective contacts to the absorber. In order to understand the irreversible processes limiting the efficient operation of the solar cell, it is necessary to obtain a precise description of the internal distribution of Fermi levels. We suggest the equivalent circuit as a central tool for obtaining such description, in relation with small perturbation measurement techniques. The fundamental steps of excitation and charge separation, and the losses by transport and charge transfer, can be represented by suitable circuit elements, and the overall circuit configuration indicates the operation of the selective contacts. The comparison of the equivalent circuits for heterogeneous dye solar cells and solid-state p-n junctions, shows the significant difference in the mechanisms of the selective contacts of these solar cells.

  4. High-resolution measurement of the 16O(γ,pn) reaction

    International Nuclear Information System (INIS)

    Isaksson, L.

    1996-10-01

    The 16 O(γ,pn) reaction has been measured with a resolution high enough to resolve individual low-lying states in the residual 14 N nucleus. Partial cross-sections, available to the acceptance of the detector system, have been extracted for the individual states, and compared to a recent calculation based on absorption on one-pion exchange currents and the Δ resonance current. The experiment was performed at the Maxlab accelerator laboratory in Lund, Sweden, using tagged photons at an energy of 67 - 76 MeV. The proton detector angular range was 60 - 100 deg and the corresponding for the neutron detector 81 - 103 deg. A missing energy resolution of 1.5 MeV was obtained. The relative population of the states in the residual 14 N nucleus indicates that the reaction takes place predominantly on proton-neutron pairs coupled to (J π ,T) = (1 + ,0). The cross-section for absorption on (0 + ,1) pairs is strongly suppressed. Furthermore, the relative population of the states indicates that both L=0 and L=2 pairs participate in the reaction. 45 refs

  5. Depletion layer characteristics and photovoltaic energy conversion in organic P-N heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Chamberlain, G A

    1983-11-01

    The depletion layer characteristics of an organic p-n heterojunction were investigated by measuring the temperature variation of the capacitance, rectification and photovoltaic short-circuit current and open-circuit voltage. The cell consisted of indium-tin-oxide-coated glass/n-type malachite green/p-type merocyanine/Au exposed to chlorine vapour, in the absence of air, to effect the marked rectification and photovoltaic properties observed. Capacitance measurements indicate that a depletion layer of about 65 nm and a barrier height of about 0.8 eV are formed between the two dyes. The forward dark current is dominated by electron tunnelling from the malachite green to the merocyanine. Using an asymmetric trapping model, the reverse saturation current was explained as the thermally activated emission of electrons from filled traps at the Fermi energy of the merocyanine to empty traps in the malachite green over a barrier of 0.72+-0.1 eV. When the cell is working in the photovoltaic mode, the photocurrent is limited by the poor carrier photogeneration efficiency in the malachite green.

  6. High-resolution measurement of the {sup 16}O({gamma},pn) reaction

    Energy Technology Data Exchange (ETDEWEB)

    Isaksson, L.

    1996-10-01

    The {sup 16}O({gamma},pn) reaction has been measured with a resolution high enough to resolve individual low-lying states in the residual {sup 14}N nucleus. Partial cross-sections, available to the acceptance of the detector system, have been extracted for the individual states, and compared to a recent calculation based on absorption on one-pion exchange currents and the {Delta} resonance current. The experiment was performed at the Maxlab accelerator laboratory in Lund, Sweden, using tagged photons at an energy of 67 - 76 MeV. The proton detector angular range was 60 - 100 deg and the corresponding for the neutron detector 81 - 103 deg. A missing energy resolution of 1.5 MeV was obtained. The relative population of the states in the residual {sup 14}N nucleus indicates that the reaction takes place predominantly on proton-neutron pairs coupled to (J{sup {pi}},T) = (1{sup +},0). The cross-section for absorption on (0{sup +},1) pairs is strongly suppressed. Furthermore, the relative population of the states indicates that both L=0 and L=2 pairs participate in the reaction. 45 refs.

  7. Simplified P_n transport core calculations in the Apollo3 system

    International Nuclear Information System (INIS)

    Baudron, Anne-Marie; Lautard, Jean-Jacques

    2011-01-01

    This paper describes the development of two different neutronics core solvers based on the Simplified P_N transport (SP_N) approximation developed in the context of a new generation nuclear reactor computational system, APOLLO3. Two different approaches have been used. The first one solves the standard SPN system. In the second approach, the SP_N equations are solved as diffusion equations by treating the SP_N flux harmonics like pseudo energy groups, obtained by a change of variable. These two methods have been implemented for Cartesian and hexagonal geometries in the kinetics solver MINOS. The numerical approximation is based on the mixed dual finite formulation and the discretization uses the Raviart-Thomas-Nedelec finite elements. For the unstructured geometries, the SP_N equations are treated by the SN transport solver MINARET by considering the second SP_N approach. The MINARET solver is based on discontinuous Galerkin finite element approximation on cylindrical unstructured meshes composed of a set of conforming triangles for the radial direction. Numerical applications are presented for both solvers in different core configurations (the Jules Horowitz research reactor (JHR) and the Generation IV fast reactor project ESFR). (author)

  8. A P-N Sequence Generator Using LFSR with Dual Edge Trigger Technique

    Directory of Open Access Journals (Sweden)

    Naghwal Nitin Kumar

    2016-01-01

    Full Text Available This paper represents the design and implementation of a low power 4-bit LFSR using Dual edge triggered flip flop. A linear feedback shift register (LFSR is assembled by N number of flip flops connected in series and a combinational logic generally xor gate. An LFSR can generate random number sequence which acts as cipher in cryptography. A known text encrypted over long PN sequence, in order to improve security sequence made longer ie 128 bit; require long chain of flip flop leads to more power consumption. In this paper a novel circuit of random sequence generator using dual edge triggered flip flop has been proposed. Data has been generated on every edge of flip flop instead of single edge. A DETFF-LFSR can generate random number require with less number of clock cycle, it minimizes the number of flip flop result in power saving. In this paper we concentrates on the designing of power competent Test Pattern Generator (TPG using four dual edge triggered flip-flops as the basic building block, overall there is reduction of power around 25% by using these techniques.

  9. Background study for the pn-CCD detector of CERN Axion Solar Telescope

    CERN Document Server

    Cebrián, S; Kuster, M.; Beltran, B.; Gomez, H.; Hartmann, R.; Irastorza, I. G.; Kotthaus, R.; Luzon, G.; Morales, J.; Ruz, J.; Struder, L.; Villar, J. A.

    2007-01-01

    The CERN Axion Solar Telescope (CAST) experiment searches for axions from the Sun converted into photons with energies up to around 10 keV via the inverse Primakoff effect in the high magnetic field of a superconducting Large Hadron Collider (LHC) prototype magnet. A backside illuminated pn-CCD detector in conjunction with an X-ray mirror optics is one of the three detectors used in CAST to register the expected photon signal. Since this signal is very rare and different background components (environmental gamma radiation, cosmic rays, intrinsic radioactive impurities in the set-up, ...) entangle it, a detailed study of the detector background has been undertaken with the aim to understand and further reduce the background level of the detector. The analysis is based on measured data taken during the Phase I of CAST and on Monte Carlo simulations of different background components. This study will show that the observed background level (at a rate of (8.00+-0.07)10^-5 counts/cm^2/s/keV between 1 and 7 keV) s...

  10. Analytical Study of 90Sr Betavoltaic Nuclear Battery Performance Based on p-n Junction Silicon

    International Nuclear Information System (INIS)

    Rahastama, Swastya; Waris, Abdul

    2016-01-01

    Previously, an analytical calculation of 63 Ni p-n junction betavoltaic battery has been published. As the basic approach, we reproduced the analytical simulation of 63 Ni betavoltaic battery and then compared it to previous results using the same design of the battery. Furthermore, we calculated its maximum power output and radiation- electricity conversion efficiency using semiconductor analysis method.Then, the same method were applied to calculate and analyse the performance of 90 Sr betavoltaic battery. The aim of this project is to compare the analytical perfomance results of 90 Sr betavoltaic battery to 63 Ni betavoltaic battery and the source activity influences to performance. Since it has a higher power density, 90 Sr betavoltaic battery yields more power than 63 Ni betavoltaic battery but less radiation-electricity conversion efficiency. However, beta particles emitted from 90 Sr source could travel further inside the silicon corresponding to stopping range of beta particles, thus the 90 Sr betavoltaic battery could be designed thicker than 63 Ni betavoltaic battery to achieve higher conversion efficiency. (paper)

  11. Universal tunneling behavior in technologically relevant P/N junction diodes

    International Nuclear Information System (INIS)

    Solomon, Paul M.; Jopling, Jason; Frank, David J.; D'Emic, Chris; Dokumaci, O.; Ronsheim, P.; Haensch, W.E.

    2004-01-01

    Band-to-band tunneling was studied in ion-implanted P/N junction diodes with profiles representative of present and future silicon complementary metal-oxide-silicon (CMOS) field effect transistors. Measurements were done over a wide range of temperatures and implant parameters. Profile parameters were derived from analysis of capacitance versus voltage characteristics, and compared to secondary-ion mass spectroscopy analysis. When the tunneling current was plotted against the effective tunneling distance (tunneling distance corrected for band curvature) a quasi-universal exponential reduction of tunneling current versus, tunneling distance was found with an attenuation length of 0.38 nm, corresponding to a tunneling effective mass of 0.29 times the free electron mass (m 0 ), and an extrapolated tunneling current at zero tunnel distance of 5.3x10 7 A/cm 2 at 300 K. These results are directly applicable for predicting drain to substrate currents in CMOS transistors on bulk silicon, and body currents in CMOS transistors in silicon-on-insulator

  12. The interest in studying beauty baryon in pN interactions at HERA

    International Nuclear Information System (INIS)

    Albrecht, H.; Fridman, A.; Mai, O.; Oest, T.; Schmidt-Parzefall, W.; Kinnunen, R.

    1993-11-01

    We present some reasons for studying beauty baryons (N b ) produced in pN interactions. We also investigate the possibilities of using a suggested HERA experiment with an internal target in order to observe the beauty baryons. Their triggering process allows the study of N b decays having a J/Ψ in the final state. The estimates of the N b production rates and branching ratios give the possibility of analyzing Λ b → ΛJ/Ψ and Ζ b → ΖJ/Ψ channels as well as their charged conjugated processes. The measurements of the decay parameter and the polarization of N b have been considered. It was also suggested to measure the Λ b → l - νp (b →u) and Λ b → l - νΛ c + (b → c) channels in order to have a new estimate of the ratio of the CKM matrix elements vertical stroke V ub /V cb vertical stroke . (orig.)

  13. UNUSUAL CARBONACEOUS DUST DISTRIBUTION IN PN G095.2+00.7

    International Nuclear Information System (INIS)

    Ohsawa, Ryou; Onaka, Takashi; Sakon, Itsuki; Mori, Tamami I.; Miyata, Takashi; Asano, Kentaro; Matsuura, Mikako; Kaneda, Hidehiro

    2012-01-01

    We investigate the polycyclic aromatic hydrocarbon (PAH) features in the young Galactic planetary nebula PN G095.2+00.7 based on mid-infrared observations. The near- to mid-infrared spectra obtained with the AKARI/IRC and the Spitzer/IRS show the PAH features as well as the broad emission feature at 12 μm usually seen in proto-planetary nebulae (pPNe). The spatially resolved spectra obtained with Subaru/COMICS suggest that the broad emission around 12 μm is distributed in a shell-like structure, but the unidentified infrared band at 11.3 μm is selectively enhanced at the southern part of the nebula. The variation can be explained by a difference in the amount of the UV radiation to excite PAHs, and does not necessarily require the chemical processing of dust grains and PAHs. It suggests that the UV self-extinction is important to understand the mid-infrared spectral features. We propose a mechanism which accounts for the evolutionary sequence of the mid-infrared dust features seen in a transition from pPNe to PNe.

  14. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Science.gov (United States)

    Usami, Shigeyoshi; Ando, Yuto; Tanaka, Atsushi; Nagamatsu, Kentaro; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi; Sugawara, Yoshihiro; Yao, Yong-Zhao; Ishikawa, Yukari

    2018-04-01

    Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that 1c pure screw dislocations are related to the reverse leakage in vertical p-n diodes.

  15. Tunnel currents produced by defects in p-n junctions of GaAs grown on vapor phase

    International Nuclear Information System (INIS)

    Barrales Guadarrama, V R; Rodríguez Rodriguez, E M; Barrales Guadarrama, R; Reyes Ayala, N

    2017-01-01

    With the purpose of assessing if the epitaxy on vapor phase technique “Close Space Vapor Deposition (CSVT)” is capable of produce thin films with adequate properties in order to manufacture p-n junctions, a study of invert and direct current was developed, in a temperature range of 94K to 293K, to junctions p-n of GaAs grown through the technique CSVT. It is shown that the dominant current, within the range 10 -7 to 10 -2 A, is consistent with a currents model of the type of internal emission form field, which shows these currents are due to the presence of localized states in the band gap. (paper)

  16. InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices

    Science.gov (United States)

    Gherasoiu, I.; Yu, K. M.; Reichertz, L.; Walukiewicz, W.

    2015-09-01

    PN junctions are basic building blocks of many electronic devices and their performance depends on the structural properties of the component layers and on the type and the amount of the doping impurities incorporated. Magnesium is the common p-type dopant for nitride semiconductors while silicon and more recently germanium are the n-dopants of choice. In this paper, therefore we analyze the quantitative limits for Mg and Ge incorporation on GaN and InGaN with high In content. We also discuss the challenges posed by the growth and characterization of InGaN pn-junctions and we discuss the properties of large area, long wavelength nanocolumn LEDs grown on silicon (1 1 1) by PA-MBE.

  17. Measurement and analysis of double-differential neutron emission spectra in (P,N) and (α,N) reactions

    International Nuclear Information System (INIS)

    Okamoto, K.; Mehta, M.K.

    1988-05-01

    The second IAEA Research Co-ordination Meeting on Measurement and Analysis of Double-Differential Neutron Emission Spectra in (p,n) and (α,n) Reactions was convened by the IAEA Nuclear Data Section at the IAEA Headquarters in Vienna during 8-10 February, 1988. The main objectives of the Co-ordinated Research Project for which this meeting was held are (i) to extract systematic information about nuclear level densities as a function of excitation energy by analysing the neutron emission spectra from (p,n) and (α,n) reactions on properly selected targets and bombarding energy range, and (ii) to parametrize this information into appropriate phenomenological models to enable reliable extrapolation for general use of level density information in basic and applied nuclear physics related problems. Detailed conclusions and recommendations, together with a summary of the programme during 1988/1989 are attached in the Appendices

  18. Least-Squares PN Formulation of the Transport Equation Using Self-Adjoint-Angular-Flux Consistent Boundary Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Laboure, Vincent M.; Wang, Yaqi; DeHart, Mark D.

    2016-05-01

    In this paper, we study the Least-Squares (LS) PN form of the transport equation compatible with voids [1] in the context of Continuous Finite Element Methods (CFEM).We first deriveweakly imposed boundary conditions which make the LS weak formulation equivalent to the Self-Adjoint Angular Flux (SAAF) variational formulation with a void treatment [2], in the particular case of constant cross-sections and a uniform mesh. We then implement this method in Rattlesnake with the Multiphysics Object Oriented Simulation Environment (MOOSE) framework [3] using a spherical harmonics (PN) expansion to discretize in angle. We test our implementation using the Method of Manufactured Solutions (MMS) and find the expected convergence behavior both in angle and space. Lastly, we investigate the impact of the global non-conservation of LS by comparing the method with SAAF on a heterogeneous test problem.

  19. Least-Squares PN Formulation of the Transport Equation Using Self-Adjoint-Angular-Flux Consistent Boundary Conditions.

    Energy Technology Data Exchange (ETDEWEB)

    Vincent M. Laboure; Yaqi Wang; Mark D. DeHart

    2016-05-01

    In this paper, we study the Least-Squares (LS) PN form of the transport equation compatible with voids in the context of Continuous Finite Element Methods (CFEM).We first deriveweakly imposed boundary conditions which make the LS weak formulation equivalent to the Self-Adjoint Angular Flux (SAAF) variational formulation with a void treatment, in the particular case of constant cross-sections and a uniform mesh. We then implement this method in Rattlesnake with the Multiphysics Object Oriented Simulation Environment (MOOSE) framework using a spherical harmonics (PN) expansion to discretize in angle. We test our implementation using the Method of Manufactured Solutions (MMS) and find the expected convergence behavior both in angle and space. Lastly, we investigate the impact of the global non-conservation of LS by comparing the method with SAAF on a heterogeneous test problem.

  20. Note on some charge exchange cross sections of inelastic pn and pp reactions in terms of the quark interchange concept

    International Nuclear Information System (INIS)

    Bakken, V.; Jacobsen, T.

    The charge exchange cross sections observed for pN interactions at 19 GeV/c in terms of the quark-quark interchange concept are discussed. If one uu-pair and one dd-pair of sea-quarks are assigned to each initial nucleon in pn and pp inelastic reactions, and if these quarks are assumed to participate on equal footing with the valence quarks in a quark-quark interchange mechanism between the two initial nucleons, the ratios between some observed charge exchange cross sections are well reproduced. This indicates that in this model the sea-quarks contribute significantly to the particle production in low p(subT) hadronic processes. (Auth.)

  1. Does the delta quench Gamow-Teller strength in (p,n)- and (p vector,p vector')-reactions

    International Nuclear Information System (INIS)

    Osterfeld, F.; Schulte, A.; Udagawa, T.; Yabe, M.

    1986-01-01

    Microscopic analyses of complete forward angle intermediate energy (p,n)-, ( 3 He,t)- and (p vector,p vector')-spin-flip spectra are presented for the reactions 90 Zr(p,n), 90 Zr( 3 He,t) and 90 Zr(p vector,p vector'). It is shown that the whole spectra up to high excitation energies (E X ∝50 MeV) are the result of correlated one-particle-one-hole (1p1h) spin-isospin transitions only. The spectra reflect, therefore, the linear spin-isospin response of the target nucleus to the probing external hadronic fields. Our results suggest that the measured (p,n)-, ( 3 He,t)- and (p vector,p vector')-cross sections are compatible with the transition strength predictions as obtained from random phase approximation (RPA) calculations. This means that the Δ isobar quenching mechanism is likely to be rather small. (orig.)

  2. Relative cross-sections of In isomer production in the (pn) and (p,2n) reactions on Cd isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Skakun, E A; Klyucharev, A P; Rakivnenko, Yu N; Romanij, I A [AN Ukrainskoi SSR, Kiev. Fiziko-Tekhnicheskii Inst.

    1975-01-01

    Ratios of excitation cross-sections for isomeric pairs are measured in a range of incident proton energy up to 20 MeV in the following reactions: sup(110)Cd(pn)sup(110*,g)In, sup(112)Cd(pn)sup(112*,g)In, sup(110)Cd(p,2n)sup(109*,g)In, sup(111)Cd(p,2n)sup(110*,g)In, and sup(113)Cd(p,2n)sup(112*,g)In. Calculations in terms of the equilibrium statistical theory have been performed for the same reactions. Comparison of the experiment with the theory yields better values for theoretical parameters.

  3. Steady-state characteristics of lateral p-n junction vertical-cavity surface-emitting lasers

    Science.gov (United States)

    Ryzhii, V.; Tsutsui, N.; Khmyrova, I.; Ikegami, T.; Vaccaro, P. O.; Taniyama, H.; Aida, T.

    2001-09-01

    We developed an analytical device model for lateral p-n junction vertical-cavity surface-emitting lasers (LJVCSELs) with a quantum well active region. The model takes into account the features of the carrier injection, transport, and recombination in LJVCSELs as well as the features of the photon propagation in the cavity. This model is used for the calculation and analysis of the LJVCSEL steady-state characteristics. It is shown that the localization of the injected electrons primarily near the p-n junction and the reabsorption of lateral propagating photons significantly effects the LJVCSELs performance, in particular, the LJVCSEL threshold current and power-current characteristics. The reincarnation of electrons and holes due to the reabsorption of lateral propagating photons can substantially decrease the threshold current.

  4. Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

    International Nuclear Information System (INIS)

    Wang Chengxin; Yang Guowei; Liu Hongwu; Han Yonghao; Luo Jifeng; Gao Chunxiao; Zou Guangtian

    2004-01-01

    High-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films were fabricated by depositing the p-type diamond single-crystal films on the I o -type diamond single crystal using a hot filament chemical vapor deposition, and later growing a highly oriented n-type ZnO film on the p-type diamond single-crystal film by magnetron sputtering. Interestingly, anomalously high ideality factors (n>>2.0) in the prepared ZnO/diamond p-n junction diode in the interim bias voltage range were measured. For this, detailed electronic characterizations of the fabricated p-n junction were conducted, and a theoretical model was proposed to clarify the much higher ideality factors of the special heterojunction diode

  5. Facile fabrication of p-n heterojunctions for Cu2O submicroparticles deposited on anatase TiO2 nanobelts

    International Nuclear Information System (INIS)

    Li, Li; Lei, Jingguo; Ji, Tianhao

    2011-01-01

    Graphical abstract: Cu 2 O particle-deposited TiO 2 nanobelts with p-n semiconductor heterojunction structure were successfully prepared via two-step preparation process, and their visible-light photodegradation activities of Rhodamine B were investigated in detail. Highlights: → Cu 2 O particle-deposited TiO 2 nanobelts mainly with diameters in a range of 200-400 nm were successfully prepared. → The amount of Cu 2 O particles deposited on TiO 2 nanobelts can be tuned. → The composite structure with Cu 2 O particles and TiO 2 nanobelts exhibits p-n semiconductor heterojunction performance. → Photocatalytic properties of such composites. -- Abstract: In this paper, Cu 2 O particle-deposited TiO 2 nanobelts with p-n semiconductor heterojunction structure were successfully prepared via a two-step preparation process to investigate electron-transfer performance between p-type Cu 2 O and n-type TiO 2 . Various measurement results confirm that the amount of pure Cu 2 O submicroparticles, with diameters within the range of 200-400 nm and deposited on the surface of TiO 2 nanobelts, can be controlled, and that the purity of Cu 2 O is heavily affected by reaction time. Visible-light photodegradation activities of Rhodamine B show that photocatalysts have little or no photocatalytic activities mainly due to their p-n heterojunction structure, indicating that there hardly appears any electron-transfer from Cu 2 O to TiO 2 .

  6. On the strong metric dimension of generalized butterfly graph, starbarbell graph, and {C}_{m}\\odot {P}_{n} graph

    Science.gov (United States)

    Yunia Mayasari, Ratih; Atmojo Kusmayadi, Tri

    2018-04-01

    Let G be a connected graph with vertex set V(G) and edge set E(G). For every pair of vertices u,v\\in V(G), the interval I[u, v] between u and v to be the collection of all vertices that belong to some shortest u ‑ v path. A vertex s\\in V(G) strongly resolves two vertices u and v if u belongs to a shortest v ‑ s path or v belongs to a shortest u ‑ s path. A vertex set S of G is a strong resolving set of G if every two distinct vertices of G are strongly resolved by some vertex of S. The strong metric basis of G is a strong resolving set with minimal cardinality. The strong metric dimension sdim(G) of a graph G is defined as the cardinality of strong metric basis. In this paper we determine the strong metric dimension of a generalized butterfly graph, starbarbell graph, and {C}mȯ {P}n graph. We obtain the strong metric dimension of generalized butterfly graph is sdim(BFn ) = 2n ‑ 2. The strong metric dimension of starbarbell graph is sdim(S{B}{m1,{m}2,\\ldots,{m}n})={\\sum }i=1n({m}i-1)-1. The strong metric dimension of {C}mȯ {P}n graph are sdim({C}mȯ {P}n)=2m-1 for m > 3 and n = 2, and sdim({C}mȯ {P}n)=2m-2 for m > 3 and n > 2.

  7. Energy dependence of V/sub tau/ in the (p,n) reaction 10 to 30 MeV

    International Nuclear Information System (INIS)

    Poppe, C.H.

    1979-03-01

    Because of the relative insensitivity of the (p,n) analog reaction to details of the nuclear wave functions, a simple description is given for the studied reaction 92 Mo(p,n) at 26 MeV in which a proton is created and a neutron destroyed in the 1/sub g9/2/ orbit. The differential and angle-integrated analog cross sections and the effective potential for IF range are plotted. 27 references

  8. Significant Prognostic Factors for Completely Resected pN2 Non-small Cell Lung Cancer without Neoadjuvant Therapy

    Science.gov (United States)

    Nakao, Masayuki; Mun, Mingyon; Nakagawa, Ken; Nishio, Makoto; Ishikawa, Yuichi; Okumura, Sakae

    2015-01-01

    Purpose: To identify prognostic factors for pathologic N2 (pN2) non-small cell lung cancer (NSCLC) treated by surgical resection. Methods: Between 1990 and 2009, 287 patients with pN2 NSCLC underwent curative resection at the Cancer Institute Hospital without preoperative treatment. Results: The 5-year overall survival (OS), cancer-specific survival (CSS), and recurrence-free survival (RFS) rates were 46%, 55% and 24%, respectively. The median follow-up time was 80 months. Multivariate analysis identified four independent predictors for poor OS: multiple-zone mediastinal lymph node metastasis (hazard ratio [HR], 1.616; p = 0.003); ipsilateral intrapulmonary metastasis (HR, 1.042; p = 0.002); tumor size >30 mm (HR, 1.013; p = 0.002); and clinical stage N1 or N2 (HR, 1.051; p = 0.030). Multivariate analysis identified three independent predictors for poor RFS: multiple-zone mediastinal lymph node metastasis (HR, 1.457; p = 0.011); ipsilateral intrapulmonary metastasis (HR, 1.040; p = 0.002); and tumor size >30 mm (HR, 1.008; p = 0.032). Conclusion: Multiple-zone mediastinal lymph node metastasis, ipsilateral intrapulmonary metastasis, and tumor size >30 mm were common independent prognostic factors of OS, CSS, and RFS in pN2 NSCLC. PMID:25740454

  9. Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

    KAUST Repository

    Tsai, Meng-Lin

    2017-06-26

    The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe-MoS lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. These robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics.

  10. Isospin excitation of nucleus in 42,44,48Ca (p,n)42,44,48Sc

    International Nuclear Information System (INIS)

    Suzuki, Keiji

    2002-01-01

    To obtain information of (p,n) reaction of heavy nucleus in 100 MeV or less, 42,44,48 Ca(p,n) 42,44,48 Sc was observed on the Cyclotron Radio Isotope Center in Tohoku University. The experimental results showed that 7, 8 and 10 spin parities were determined for 42 Sc, 44 Sc and 48 SC, respectively. It was the first determination of one and two negative parity transition of 42 Sc and 48 Sc,respectively, by (p,n) reaction. The full space wave function made by 0f1p shell effective interaction by Richter,et al is good accuracy and reliability. On the (p,n) reaction at E p =35 MeV, the transition matrix elements of 42 Ca, 44 Ca and 48 Ca were derived. On the experiment of 42 Ca(p,n) 42 Sc at E p 2 on energy was agreed with the calculation results by Franey and Love. The nuclear structure of 42 Ca was thought to show more stronger U(4) symmetry, because strong GT transition at T=1 was not observed, which was expected by j-j bonding shell model calculation. (S.Y.)

  11. Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

    Science.gov (United States)

    Minj, Albert; Cros, Ana; Auzelle, Thomas; Pernot, Julien; Daudin, Bruno

    2016-09-01

    Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs). We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrinkage of the built-in potential for NWs with small diameter due to surface band bending, in qualitative agreement with the measurements. The photovoltage of the NW/substrate contact is studied by analyzing the response of NW segments with p- and n-type doping under illumination. Our results show that the shifts of the Fermi levels, and not the changes in surface band bending, are the most important effects under above band-gap illumination. The quantitative electrical information obtained here is important for the use of NW p-n junctions as photovoltaic or rectifying devices at the nanoscale, and is especially relevant since the technique does not require the formation of ohmic contacts to the NW junction.

  12. Chemically fixed p-n heterojunctions for polymer electronics by means of covalent B-F bond formation

    Science.gov (United States)

    Hoven, Corey V.; Wang, Huiping; Elbing, Mark; Garner, Logan; Winkelhaus, Daniel; Bazan, Guillermo C.

    2010-03-01

    Widely used solid-state devices fabricated with inorganic semiconductors, including light-emitting diodes and solar cells, derive much of their function from the p-n junction. Such junctions lead to diode characteristics and are attained when p-doped and n-doped materials come into contact with each other. Achieving bilayer p-n junctions with semiconducting polymers has been hindered by difficulties in the deposition of thin films with independent p-doped and n-doped layers. Here we report on how to achieve permanently fixed organic p-n heterojunctions by using a cationic conjugated polyelectrolyte with fluoride counteranions and an underlayer composed of a neutral conjugated polymer bearing anion-trapping functional groups. Application of a bias leads to charge injection and fluoride migration into the neutral layer, where irreversible covalent bond formation takes place. After the initial charging and doping, one obtains devices with no delay in the turn on of light-emitting electrochemical behaviour and excellent current rectification. Such devices highlight how mobile ions in organic media can open opportunities to realize device structures in ways that do not have analogies in the world of silicon and promise new opportunities for integrating organic materials within technologies now dominated by inorganic semiconductors.

  13. Evaluation of forest management practices through application of a biogeochemical model, PnET-BGC

    Science.gov (United States)

    Valipour, M.; Driscoll, C. T.; Johnson, C. E.; Campbell, J. L.; Fahey, T.; Zeng, T.

    2017-12-01

    Forest ecosystem response to logging disturbance varies significantly, depending on site conditions, species composition, land use history, and the method and frequency of harvesting. The long-term effects of forest cuttings are less clear due to limited information on land use history and long-term time series observations. The hydrochemical model, PnET-BGC was modified and verified using field data from multiple experimentally harvested northern hardwood watersheds at the Hubbard Brook Experimental Forest (HBEF), New Hampshire, USA, including a commercial whole-tree harvest (Watershed 5), a devegetation experiment (Watershed 2; devegetation and herbicide treatment), a commercial strip-cut (Watershed 4) to simulate the hydrology, biomass accumulation, and soil solution and stream water chemistry responses to clear-cutting. The confirmed model was used to investigate temporal changes in aboveground biomass accumulation and nutrient dynamics under three different harvesting intensities (40%, 60%, 80%) over four varied rotation lengths (20, 40, 60, 80 years) with results compared with a scenario of no forest harvesting. The total ecosystem carbon pool (biomass, soil and litter) was reduced over harvesting events. The greatest decline occurred in litter by 40%-70%, while the pool of carbon stored in aboveground biomass decreased by 30%-60% for 80% cutting levels at 40 and 20 year rotation lengths, respectively. The large pool of soil organic carbon remained relatively stable, with only minor declines over logging regimes. Stream water simulations demonstrated increased loss of major elements over cutting events. Ca+2 and NO3- were the most sensitive elements to leaching over frequent intensive logging. Accumulated leaching of Ca+2 and NO3- varied between 90-520 t Ca/ha and 40-420 t N/ha from conservative (80-year period and 40% cutting) to aggressive (20-year period and 80% cutting) cutting regimes, respectively. Moreover, a reduction in nutrient plant uptake over

  14. Energy dependent charge spread function in a dedicated synchrotron beam pnCCD detector

    International Nuclear Information System (INIS)

    Yousef, Hazem

    2011-01-01

    A scan on the pixel edges is the method which is used to resolve the electron cloud size in the pixel array of the pnCCD detector. The EDR synchrotron radiation in BESSY is the source of the X-ray photons which are used in the scans. The radius of the electron cloud as a function of the impinging photon energy is analyzed. The angle of incidence of the X-ray beam is employed in the measurements. The measurements are validated by the numerical simulation models. The inclined X-ray track leads to distribute the electron clouds in a certain number of pixels according to the incident angle of the X-ray beam. The pixels detect different electron clouds according to their generation position in the detector bulk. A collimated X-ray beam of 12.14 keV is used in the measurements with 30 and 40 entrance angles. It is shown that the two factors that leads to expand the electron clouds namely the diffusion and the mutual electrostatic repulsion can be separated from the measured electron clouds. It is noticed as well that the influence of the mutual electrostatic repulsion dominates the cloud expansion over the diffusion process in the collection time of the detector. The perpendicular X-ray track leads to determine the average radius of the electron cloud per photon energy. The results show that the size of the electron clouds (RMS) in the energy range of [5.0-21.6] keV is smaller than the pixel size. (orig.)

  15. An apparatus and process for forming P-N junction semiconductor units

    International Nuclear Information System (INIS)

    1975-01-01

    It is stated that although many methods of ion implantation have been developed it seems that the method of 'hot implantation' is still in its infancy. In this method the target is preheated in an ion implantor during implantation of ions, leading to radiation enhanced diffusion. The apparatus described comprises the following: (i) a bell jar evacuated to -3 Torr containing four electrodes arranged in two pairs, one electrode of the first pair being in the form of a mesh; (ii) a source of high pulsating direct voltage connected to the first pair of electrodes, with the mesh electrode negatively poled, to ionise the rarified air in the bell jar and accelerate the resulting positive N and O ions; (iii) an RF voltage source connected to the other pair of electrodes to facilitate the ionisation; (iv) a dopant semiconductor body, heated by a wire wound heater, placed underneath the mesh electrode so that the accelerated ions bombard the dopant layer through the mesh electrode and implant dopant atoms in the semiconductor body. The distance between the mesh electrode and the surface of the dopant-coated semiconductive body, should be about 5mm. The mesh electrode consists of a sputtering-resistant refractory metal, and includes a cooling system. The dopant-coated semiconductive body is placed on a ceramic plate in the bell jar, and the power supply line of the heater is insulated from the voltage applied to the negative electrode, which is earthed, by using an insulated heater transformer combined with an autotransformer. The ceramic plate is attached to a plate on which the heater is wound, and the temperature of the heating should be variable between 400 0 and 500 0 C. A process for forming P-N junction semiconductor units using this apparatus is described. (U.K.)

  16. Energy dependent charge spread function in a dedicated synchrotron beam pnCCD detector

    Energy Technology Data Exchange (ETDEWEB)

    Yousef, Hazem

    2011-05-20

    A scan on the pixel edges is the method which is used to resolve the electron cloud size in the pixel array of the pnCCD detector. The EDR synchrotron radiation in BESSY is the source of the X-ray photons which are used in the scans. The radius of the electron cloud as a function of the impinging photon energy is analyzed. The angle of incidence of the X-ray beam is employed in the measurements. The measurements are validated by the numerical simulation models. The inclined X-ray track leads to distribute the electron clouds in a certain number of pixels according to the incident angle of the X-ray beam. The pixels detect different electron clouds according to their generation position in the detector bulk. A collimated X-ray beam of 12.14 keV is used in the measurements with 30 and 40 entrance angles. It is shown that the two factors that leads to expand the electron clouds namely the diffusion and the mutual electrostatic repulsion can be separated from the measured electron clouds. It is noticed as well that the influence of the mutual electrostatic repulsion dominates the cloud expansion over the diffusion process in the collection time of the detector. The perpendicular X-ray track leads to determine the average radius of the electron cloud per photon energy. The results show that the size of the electron clouds (RMS) in the energy range of [5.0-21.6] keV is smaller than the pixel size. (orig.)

  17. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    KAUST Repository

    Li, Ming Yang; Shi, Yumeng; Cheng, Chia Chin; Lu, Li Syuan; Lin, Yung Chang; Tang, Hao-Ling; Tsai, Meng Lin; Chu, Chih Wei; Wei, Kung Hwa; He, Jr-Hau; Chang, Wen Hao; Suenaga, Kazu; Li, Lain-Jong

    2015-01-01

    . Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via

  18. Separation of flip and non-flip parts of np → pn charge exchange at energies Tn = 0,5-2,0 GeV

    International Nuclear Information System (INIS)

    Shindin, R.A.; Gur'ev, D.K.; Morozov, A.A.; Nomofilov, A.A.; Strunov, L.N.

    2011-01-01

    The new 'Delta-Sigma' experimental data on the ratio R dp allowed separating the Flip and Non-Flip parts of the differential cross section of np → pn charge exchange process at the zero angle by the Dean formula. The PSA solutions for the np → np elastic scattering are transformed to the np → pn charge exchange representation using unitary transition, and good agreement is obtained

  19. GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

    Science.gov (United States)

    Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

    2015-03-01

    GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

  20. Ethylene polymerization by PN3-type pincer chromium(III) complexes

    KAUST Repository

    Gong, Dirong

    2014-12-01

    Chromium (III) complexes, Cr1, [2,6-(tBu2PNH) 2C5H4N]CrCl3; Cr2, [2,6-(Ph 2PNH)2C5H4N]CrCl3; Cr3, [2-(tBu2PNH)C5H4N]CrCl3 THF; Cr4, [6-(tBu2PNH)C5H4N-2- CH2NEt2]CrCl3; Cr5, [6-(tBu 2PNH)C5H4N-2-C3H2N 2]CrCl3; Cr6, [6-(tBu2PNH)C 5H4N-2-(3,5-Me2)C3H 2N2]CrCl3; Cr7, [6-(tBu 2PNH)C5H4N-2-(3,5-iPr 2)C3H2N2]CrCl3; Cr8, [6-(tBu2PNH)C5H4N-2-(3,5-Ph 2)C3H2N2]CrCl3, bearing a family of neutral PN3-type pincer ligands have been prepared. The molecular structure of Cr2 was further elucidated by the X-ray crystallographic analysis, showing an octahedral geometry. Treatment of these complexes with MAO or alkylaluminum led to catalysts with moderate activities (about 105 g (PE)/Cr(mol) h) for ethylene polymerization, affording exclusively linear low molecular weight solid PE without any detectable oligomers. Among Cr1-Cr8, the highest activity was achieved for Cr1/MAO at room temperature with production of PE with highest molecular weight, indicating that replacement of both tBu groups in Cr1 with Ph groups, or one PtBu2 with the N (imine) arm, resulted in a lower catalytic activity and lower M w. © 2014 Elsevier B.V.

  1. Mathematical and numerical analysis of PN models for photons transport problems

    International Nuclear Information System (INIS)

    Valentin, Xavier

    2015-01-01

    Computational costs for direct numerical simulations of photon transport problems are very high in terms of CPU time and memory. One way to tackle this issue is to develop reduced models that a cheaper to solve numerically. There exists number of these models: moments models, discrete ordinates models (S N ), diffusion-like models... In this thesis, we focus on P N models in which the transport operator is approached by mean of a truncated development on the spherical harmonics basis. These models are arbitrary accurate in the angular dimension and are rotationally invariants (in multiple space dimensions). The latter point is fundamental when one wants to simulate inertial confinement fusion (ICF) experiments where the spherical symmetry plays an important part in the accuracy of the numerical solutions. We study the mathematical structure of the PN models and construct a new numerical method in the special case of a one dimensional space dimension with spherical symmetry photon transport problems. We first focus on a linear transport problem in the vacuum. Even in this simple case, it appears in the P N equations geometrical source terms that are stiff in the neighborhood of r = 0 and thus hard to discretize. Existing numerical methods are not satisfactory for multiple reasons: (1) inaccuracy in the neighborhood of r = 0 ('flux-dip'), (2) do not capture steady states (well-balanced scheme), (3) no stability proof. Following recent works, we develop a new well-balanced scheme for which we show the L 2 stability. We then extend the scheme for photon transport problems within a no moving media, the linear Boltzmann equation, and interest ourselves on its behavior in the diffusion limit (asymptotic-preserving property). In a second part, we consider radiation hydrodynamics problems. Since modelization of these problems is still under discussion in the literature, we compare a set of existing models by mean of mathematical analysis and establish a hierarchy

  2. Long-term safety and efficacy of a pasteurized nanofiltrated prothrombin complex concentrate (Beriplex P/N): a pharmacovigilance study.

    Science.gov (United States)

    Hanke, A A; Joch, C; Görlinger, K

    2013-05-01

    The rapid reversal of the effects of vitamin K antagonists is often required in cases of emergency surgery and life-threatening bleeding, or during bleeding associated with high morbidity and mortality such as intracranial haemorrhage. Increasingly, four-factor prothrombin complex concentrates (PCCs) containing high and well-balanced concentrations of vitamin K-dependent coagulation factors are recommended for emergency oral anticoagulation reversal. Both the safety and efficacy of such products are currently in focus, and their administration is now expanding into the critical care setting for the treatment of life-threatening bleeding and coagulopathy resulting either perioperatively or in cases of acute trauma. After 15 yr of clinical use, findings of a pharmacovigilance report (February 1996-March 2012) relating to the four-factor PCC Beriplex P/N (CSL Behring, Marburg, Germany) were analysed and are presented here. Furthermore, a review of the literature with regard to the efficacy and safety of four-factor PCCs was performed. Since receiving marketing authorization (February 21, 1996), ~647 250 standard applications of Beriplex P/N have taken place. During this time, 21 thromboembolic events judged to be possibly related to Beriplex P/N administration have been reported, while no incidences of viral transmission or heparin-induced thrombocytopenia were documented. The low risk of thromboembolic events reported during the observation period (one in ~31 000) is in line with the incidence observed with other four-factor PCCs. In general, four-factor PCCs have proven to be well tolerated and highly effective in the rapid reversal of vitamin K antagonists.

  3. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    Science.gov (United States)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  4. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  5. Comparison of CDOM EEMs Characteristics along F and PN section in Eastern China Sea: significance for sources tracing

    Science.gov (United States)

    Du, Yong; Zhang, Xiaoyu; Jiang, Binbin; Huang, Dasong; Yao, Lingling

    2015-04-01

    In this paper, a total of 28 water samples were collected mainly from three sections(C section in the Yangtze river inner estuary, PN section and F section on the spindle of Changjiang diluted water influenced by different hydrodynamic processes),which taken on two cruises in spring and summer of 2011. Absorption and fluorescence spectroscopy were measured along with dissolved organic carbon(DOC) concentrations and temperature, salinity and another environmental parameters to characterize the material sources and environmental implications of dissolved organic matter(DOM). Two protein-like components(tyrosine-like peak B and tryptophan-like peak T1), and two humic-like components(marine humic-like peak M and ultraviolet region humic-like peak A ) were identified by PARAFAC. We discussed CDOM distribution characteristic, material composition, and influence factors during the slowly dilution process of Changjiang diluted water into the east China sea by comparing the correlation of the CDOM absorption, fluorescence intensity, and fluorescence peak with DOC, in order to provide the based biogeochemistry theory basis for building DOC implications using CDOM fluorescence properties. The results revealed that:1) the Yangtze river and its inner estuary (upstream of the river mouth) were detected a higher amount of humic-like components. With the rapid dilution (or settlement) at the inner estuary, the humic-like components would further spread and dilute slowly on PN section and F section. On PN section, the terrigenous material is the main source material, and the main mechanism of CDOM distribution characteristics is controlled by dilution diffusion. Affected by the water mass convergence, marine dissolved organic matter in local waters had obvious input. However, due to the complexed hydrodynamic environment on F section, the input of terrigenous material has many ways. The influence of marine dissolved organic matter increased with the offshore distance increases.2

  6. Evaluation of pN factors in patients with primary lung cancer by using perfusion, inhalation and ventilation studies

    International Nuclear Information System (INIS)

    Tamai, Toyosato; Tanabe, Masatada; Satoh, Katashi

    1987-01-01

    The interpretation of scintigraphic patterns and the role of pathophysiological mechanisms in patients with primary lung cancer were investigated. To determine the relative roles of perfusion, inhalation and ventilation scintigraphy, the relationship between the count ratio of the affected side to the healthy side and the post-surgical histological lymph nodes factors were observed in this study. These scintigraphic count ratio's in patients with primary lung cancer did not reflect the pN factors except in the perfusion study in patients with hilar primary lung cancer. (author)

  7. Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

    KAUST Repository

    Wang, Zhenwei

    2016-08-30

    A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.

  8. Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC

    International Nuclear Information System (INIS)

    Vervisch, V.; Issa, F.; Ottaviani, L.; Lazar, M.; Kuznetsov, A.; Szalkai, D.; Klix, A.; Lyoussi, A.; Vermeeren, L.; Hallen, A.

    2013-06-01

    In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10 Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed in the Belgian Reactor 1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor power (authors)

  9. Gamow-Teller strength in deformed nuclei within self-consistent pnQRPA with the Gogny force

    Directory of Open Access Journals (Sweden)

    Martini M.

    2014-03-01

    Full Text Available In recent years fully consistent quasiparticle random-phase approximation (QRPA calculations using finite range Gogny force have been performed to study electromagnetic excitations of several axially-symmetric deformed nuclei up to the 238U. Here we present the extension of this approach to the charge-exchange nuclear excitations (pn-QRPA. In particular we focus on the Gamow-Teller (GT excitations. A comparison of the predicted GT strength distribution with existing experimental data is presented The role of nuclear deformation is shown. Special attention is paid to β-decay half-lives calculations for which experimental data exist.

  10. Experimental study of exclusive $^2$H$(e,e^\\prime p)n$ reaction mechanisms at high $Q^2$

    Energy Technology Data Exchange (ETDEWEB)

    Kim Egiyan; Gegham Asryan; Nerses Gevorgyan; Keith Griffioen; Jean Laget; Sebastian Kuhn; Gary Adams; Moscov Amaryan; Pawel Ambrozewicz; Marco Anghinolfi; Gerard Audit; Harutyun AVAKIAN; Harutyun Avakian; Hovhannes Baghdasaryan; Nathan Baillie; Jacques Ball; Nathan Baltzell; Steve Barrow; Vitaly Baturin; Marco Battaglieri; Ivan Bedlinski; Ivan Bedlinskiy; Mehmet Bektasoglu; Matthew Bellis; Nawal Benmouna; Barry Berman; Angela Biselli; Lukasz Blaszczyk; Sylvain Bouchigny; Sergey Boyarinov; Robert Bradford; Derek Branford; William Briscoe; William Brooks; Stephen Bueltmann; Volker Burkert; Cornel Butuceanu; John Calarco; Sharon Careccia; Daniel Carman; Antoine Cazes; Shifeng Chen; Philip Cole; Patrick Collins; Philip Coltharp; Dieter Cords; Pietro Corvisiero; Donald Crabb; Volker Crede; John Cummings; Natalya Dashyan; Rita De Masi; Raffaella De Vita; Enzo De Sanctis; Pavel Degtiarenko; Haluk Denizli; Lawrence Dennis; Alexandre Deur; Kahanawita Dharmawardane; Richard Dickson; Chaden Djalali; Gail Dodge; Joseph Donnelly; David Doughty; Michael Dugger; Steven Dytman; Oleksandr Dzyubak; Hovanes Egiyan; Lamiaa Elfassi; Latifa Elouadrhiri; Paul Eugenio; Renee Fatemi; Gleb Fedotov; Gerald Feldman; Robert Feuerbach; Robert Fersch; Michel Garcon; Gagik Gavalian; Gerard Gilfoyle; Kevin Giovanetti; Francois-Xavier Girod; John Goetz; Atilla Gonenc; Christopher Gordon; Ralf Gothe; Michel Guidal; Matthieu Guillo; Hayko Guler; Lei Guo; Vardan Gyurjyan; Cynthia Hadjidakis; Kawtar Hafidi; Hayk Hakobyan; Rafael Hakobyan; Charles Hanretty; John Hardie; F. Hersman; Kenneth Hicks; Ishaq Hleiqawi; Maurik Holtrop; Charles Hyde-Wright; Yordanka Ilieva; David Ireland; Boris Ishkhanov; Eugeny Isupov; Mark Ito; David Jenkins; Hyon-Suk Jo; Kyungseon Joo; Henry Juengst; Narbe Kalantarians; James Kellie; Mahbubul Khandaker; Wooyoung Kim; Andreas Klein; Franz Klein; Alexei Klimenko; Mikhail Kossov; Zebulun Krahn; Laird Kramer; V. Kubarovsky; Joachim Kuhn; Sergey Kuleshov; Jeff Lachniet; Jorn Langheinrich; David Lawrence; Ji Li; Kenneth Livingston; Haiyun Lu; Marion MacCormick; Claude Marchand; Nikolai Markov; Paul Mattione; Simeon McAleer; Bryan McKinnon; John McNabb; Bernhard Mecking; Surik Mehrabyan; Joseph Melone; Mac Mestayer; Curtis Meyer; Tsutomu Mibe; Konstantin Mikhaylov; Ralph Minehart; Marco Mirazita; Rory Miskimen; Viktor Mokeev; Kei Moriya; Steven Morrow; Maryam Moteabbed; James Mueller; Edwin Munevar Espitia; Gordon Mutchler; Pawel Nadel-Turonski; Rakhsha Nasseripour; Silvia Niccolai; Gabriel Niculescu; Maria-Ioana Niculescu; Bogdan Niczyporuk; Megh Niroula; Rustam Niyazov; Mina Nozar; Grant O' Rielly; Mikhail Osipenko; Alexander Ostrovidov; Kijun Park; Evgueni Pasyuk; Craig Paterson; Sergio Pereira; Joshua Pierce; Nikolay Pivnyuk; Dinko Pocanic; Oleg Pogorelko; Sergey Pozdnyakov; Barry Preedom; John Price; Yelena Prok; Dan Protopopescu; Brian Raue; Gregory Riccardi; Giovanni Ricco; Marco Ripani; Barry Ritchie; Federico Ronchetti; Guenther Rosner; Patrizia Rossi; Franck Sabatie; Julian Salamanca; Carlos Salgado; Joseph Santoro; Vladimir Sapunenko; Reinhard Schumacher; Vladimir Serov; Youri Sharabian; Nikolay Shvedunov; Alexander Skabelin; Elton Smith; Lee Smith; Daniel Sober; Daria Sokhan; Aleksey Stavinskiy; Samuel Stepanyan; Stepan Stepanyan; Burnham Stokes; Paul Stoler; Steffen Strauch; Mauro Taiuti; David Tedeschi; Ulrike Thoma; Avtandil Tkabladze; Svyatoslav Tkachenko; Luminita Todor; Clarisse Tur; Maurizio Ungaro; Michael Vineyard; Alexander Vlassov; Daniel Watts; Lawrence Weinstein; Dennis Weygand; M. Williams; Elliott Wolin; Michael Wood; Amrit Yegneswaran; Lorenzo Zana; Jixie Zhang; Bo Zhao; Zhiwen Zhao

    2007-06-01

    The reaction {sup 2}H(e,e{prime} p)n has been studied with full kinematic coverage for photon virtuality 1.75 < 5.5 {approx} GeV{sup 2}. Comparisons of experimental data with theory indicate that for very low values of neutron recoil momentum (p{sub n} < 100 MeV/c) the neutron is primarily a spectator and the reaction can be described by the plane-wave impulse approximation. For 100 < 750 MeV/c proton-neutron rescattering dominates the cross section, while {Delta} production followed by the N{Delta} {yields} NN transition is the primary contribution at higher momenta.

  11. N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

    International Nuclear Information System (INIS)

    Eliseev, P G

    2012-01-01

    A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

  12. Hybrid p-n junction light-emitting diodes based on sputtered ZnO and organic semiconductors

    International Nuclear Information System (INIS)

    Na, Jong H.; Kitamura, M.; Arita, M.; Arakawa, Y.

    2009-01-01

    We fabricated light-emitting hybrid p-n junction devices using low temperature deposited ZnO and organic films, in which the ZnO and the organic films served as the n- and p-type component, respectively. The devices have a rectification factor as high as ∼10 3 and a current density greater than 2 A/cm 2 . Electroluminescence of the hybrid device shows the mixture of the emission bands arising from radiative charge recombination in organic and ZnO. The substantial device properties could provide various opportunities for low cost and large area multicolor light-emitting sources.

  13. A fast and zero-biased photodetector based on GaTe-InSe vertical 2D p-n heterojunction

    Science.gov (United States)

    Feng, W.; Jin, Z.; Yuan, J.; Zhang, J.; Jia, S.; Dong, L.; Yoon, J.; Zhou, L.; Vajtai, R.; Tour, J. M.; Ajayan, P. M.; Hu, P.; Lou, J.

    2018-04-01

    p-n junctions serve as the building blocks for fundamental semiconductor devices, such as solar cells, light-emitting diodes (LEDs) and photodetectors. With recent studies unveiling the excellent optoelectronic properties of two-dimensional (2D) semiconductors, they are considered to be superb candidates for high performance p-n junctions. Here, we fabricate a vertical GaTe-InSe van der Waals (vdWs) p-n heterojunction by a PDMS-assisted transfer technique without etching. The fabricated p-n heterojunction shows gate-tunable current-rectifying behavior with a rectification factor reaching 1000. In addition, it features fast photodetection under zero bias as well as a high power conversion efficiency (PCE). Under 405 nm laser excitation, the zero-biased photodetector shows a high responsivity of 13.8 mA W-1 as well as a high external quantum efficiency (EQE) of 4.2%. Long-term stability is also observed and a response time of 20 µs is achieved due to stable and fast carrier transit through the built-in electric field in the depletion region. Fast and efficient charge separation in the vertical 2D p-n junction paves the way for developing 2D photodetectors with zero dark current, high speed and low power consumption.

  14. Direct and indirect signal detection of 122 keV photons with a novel detector combining a pnCCD and a CsI(Tl) scintillator

    Energy Technology Data Exchange (ETDEWEB)

    Schlosser, D.M., E-mail: dieter.schlosser@pnsensor.de [PNSensor GmbH, Sckellstraße 3, 81667 München (Germany); Huth, M.; Hartmann, R. [PNSensor GmbH, Sckellstraße 3, 81667 München (Germany); Abboud, A.; Send, S. [Universität Siegen, Walter-Flex-Straße 3, 57072 Siegen (Germany); Conka-Nurdan, T. [Türkisch-Deutsche Universität, Sakinkaya Cad. 86, Beykoz, 34820 Istanbul (Turkey); Shokr, M.; Pietsch, U. [Universität Siegen, Walter-Flex-Straße 3, 57072 Siegen (Germany); Strüder, L. [PNSensor GmbH, Sckellstraße 3, 81667 München (Germany); Universität Siegen, Walter-Flex-Straße 3, 57072 Siegen (Germany)

    2016-01-01

    By combining a low noise fully depleted pnCCD detector with a CsI(Tl) scintillator, an energy-dispersive area detector can be realized with a high quantum efficiency (QE) in the range from below 1 keV to above 100 keV. In direct detection mode the pnCCD exhibits a relative energy resolution of 1% at 122 keV and spatial resolution of less than 75 µm, the pixel size of the pnCCD. In the indirect detection mode, i.e. conversion of the incoming X-rays in the scintillator, the measured energy resolution was about 9–13% at 122 keV, depending on the depth of interaction in the scintillator, while the position resolution, extracted with the help of simulations, was 30 µm only. We show simulated data for incident photons of 122 keV and compare the various interaction processes and relevant physical parameters to experimental results obtained with a radioactive {sup 57}Co source. - Highlights: • Position and energy resolving pnCCD+CsI(Tl) detector for energies from 1-150 keV • Detection in the pnCCD (122keV): 1% energy and <75µm spatial resolution • Detection in the scintillator (122keV): 9-12% energy and ~30µm spatial resolution.

  15. Simulation of AZ-PN100 resist pattern fluctuation in X-ray lithography, including synchrotron beam polarization

    International Nuclear Information System (INIS)

    Scheckler, E.W.; Ogawa, Taro; Tanaka, Toshihiko; Takeda, Eiji; Oizumi, Hiroaki.

    1993-01-01

    A new simulation model for nanometer-scale pattern fluctuation in X-ray lithography is presented and applied to a study of AZ-PN100 negative chemical amplification resist. The exposure simulation considers polarized photons from a synchrotron radiation (SR) source. Monte Carlo simulation of Auger and photoelectron generation is followed by electron scattering simulation to determine the deposited energy distribution at the nanometer scale, including beam polarization effects. An acid-catalyst random walk model simulates the post-exposure bake (PEB) step. Fourier transform infrared (FTIR) spectroscopy and developed resist thickness measurements are used to fit PEB and rate models for AZ-PN100. A polymer removal model for development simulation predicts the macroscopic resist shape and pattern roughness. The simulated 3σ linewidth variation is in excess of 24 nm. Simulation also shows a detrimental effect if the beam polarization is perpendicular to the line. Simulation assuming a theoretical ideal exposure yields a 50 nm minimum line for standard process conditions. (author)

  16. Pharmacological characterisation of the highly NaV1.7 selective spider venom peptide Pn3a.

    Science.gov (United States)

    Deuis, Jennifer R; Dekan, Zoltan; Wingerd, Joshua S; Smith, Jennifer J; Munasinghe, Nehan R; Bhola, Rebecca F; Imlach, Wendy L; Herzig, Volker; Armstrong, David A; Rosengren, K Johan; Bosmans, Frank; Waxman, Stephen G; Dib-Hajj, Sulayman D; Escoubas, Pierre; Minett, Michael S; Christie, Macdonald J; King, Glenn F; Alewood, Paul F; Lewis, Richard J; Wood, John N; Vetter, Irina

    2017-01-20

    Human genetic studies have implicated the voltage-gated sodium channel Na V 1.7 as a therapeutic target for the treatment of pain. A novel peptide, μ-theraphotoxin-Pn3a, isolated from venom of the tarantula Pamphobeteus nigricolor, potently inhibits Na V 1.7 (IC 50 0.9 nM) with at least 40-1000-fold selectivity over all other Na V subtypes. Despite on-target activity in small-diameter dorsal root ganglia, spinal slices, and in a mouse model of pain induced by Na V 1.7 activation, Pn3a alone displayed no analgesic activity in formalin-, carrageenan- or FCA-induced pain in rodents when administered systemically. A broad lack of analgesic activity was also found for the selective Na V 1.7 inhibitors PF-04856264 and phlotoxin 1. However, when administered with subtherapeutic doses of opioids or the enkephalinase inhibitor thiorphan, these subtype-selective Na V 1.7 inhibitors produced profound analgesia. Our results suggest that in these inflammatory models, acute administration of peripherally restricted Na V 1.7 inhibitors can only produce analgesia when administered in combination with an opioid.

  17. Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

    Science.gov (United States)

    Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

    2016-08-31

    The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

  18. Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor.

    Science.gov (United States)

    Jeon, Pyo Jin; Lee, Young Tack; Lim, June Yeong; Kim, Jin Sung; Hwang, Do Kyung; Im, Seongil

    2016-02-10

    Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet-ZnO nanowire 2D-1D heterojunction applications for p-n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP-ZnO nanodimension p-n diode displays a high ON/OFF ratio of ∼10(4) in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics.

  19. 5.0 kV breakdown-voltage vertical GaN p-n junction diodes

    Science.gov (United States)

    Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

    2018-04-01

    A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

  20. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

    Science.gov (United States)

    Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

    2015-10-05

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  1. A study of the (p,pn) reaction on 1p shell nuclei at 46 MeV

    International Nuclear Information System (INIS)

    Miller, C.A.

    1974-01-01

    The (p,pn) reaction on four 1p shell nuclei, 6 Li, 9 Be, 13 C and 12 C, as well as the 6 Li(p,2p) reaction, have been studied at 46 MeV. The 6 Li(p,pn) cross section was found to be approximately four times that for (p,2p) and to have a very different angular dependence. Both reactions show the s-state admixture in 6 Li observed with (p,2p) at higher energies. For all of the target nuclei, the cross sections have features that cannot be fitted by a renormalized Plane Wave Impulse Approximation (PWIA) calculation. A zero range distorted wave calculation was found to be in only fair agreement with the 9 Be and 13 C data. The overall magnitudes of the results of the calculation were found to be very sensitive to the RMS radii of the bound state wave functions of the knocked-out neutrons. (author)

  2. P-n junction diodes with polarization induced p-type graded InxGa1-xN layer

    Science.gov (United States)

    Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

    2017-10-01

    In this study, p-n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped InxGa1-xN layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded InxGa1-xN layers needed to be capped with a thin Mg-doped InxGa1-xN layer to make good ohmic contacts and to reduce the on-resistance of the p-n diodes. The Pol-p-n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

  3. Preoperative multidetector CT manifestations of perigastric lymph nodes in patients with early gastric cancer and pN0

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Jung Hyun; Yu, Jeong Sik; Chung, Jae Joon; Lim, Joo Hee; Cho, Eun Suk; Kim, Ki Whang [Dept. of Radiology, Yonsei University College of Medicine, Gangnam Severance Hospital, Seoul (Korea, Republic of)

    2013-11-15

    To find the determinant of lymph node (LN) manifestations on preoperative multidetector CT (MDCT) in early gastric cancer (EGC) patients with pN0. One hundred and eighty-six consecutive patients with pT1pN0, the largest perigastric LN on preoperative MDCT, were categorized into two groups according to 8 different parameters [short (SD) and long diameter (LD) 4/6/8 mm, average attenuation 100 Hounsfield unit, short-to-long diameter-ratio (SLR) 0.7], and correlated with the size, gross type, depth of invasion and microscopic type of their primary lesions by the chi-square test and multiple logistic regression analysis. When the primary lesion was larger than 3 cm, the LNs were larger in 4 parameters (SD or LD, 4/6 mm; p < 0.05); gross type IIb patients showed smaller LNs in 5 parameters (SD 4/6 mm, LD 4/6/8 mm; p < 0.05); and patients with microscopically-undifferentiated lesions showed larger LNs in SD 4 mm or LD 8 mm by the chi-square test and multiple logistic regression analysis. The depth of invasion showed no significant difference in LN size. No factors revealed significant difference in LN attenuation or SLR. Benign regional LN enlargement is more frequent in EGC patients with larger size primary lesions or lesion with poor microscopic differentiation. However, this condition is less frequent in gross type IIb patients.

  4. Charge exchange (p,n) reactions to the isobaric analog states of high Z nuclei: 73< or =Z< or =92

    International Nuclear Information System (INIS)

    Hansen, L.F.; Grimes, S.M.; Poppe, C.H.; Wong, C.

    1983-01-01

    Differential cross sections have been measured for the (p,n) reaction to the isobaric analog states of 181 Ta, 197 Au, 209 Bi, 232 Th, and 238 U at an incident energy of 27 MeV. Because of the importance of collective effects in this mass region, coupled-channel calculations have been carried out in the analysis of the data. Optical potentials obtained from the Lane model for the charge exchange reaction have been used in the simultaneous analysis of coupled proton and neutron channels. The sensitivity of the calculations to the different couplings between the levels and to the magnitude of the isovector potentials, V 1 and W 1 , is discussed. The good agreement obtained between the measured and calculated (p,n) angular distributions to the analog state confirms the validity of the Lane formalism for high-Z nuclei (Z> or =50). Elastic neutron differential cross sections inferred from the coupled-channel analysis are compared with measurements available in the literature in the energy range 7--8 MeV. The results of these calculations agree with the measured values as well as the results of calculations made using global neutron optical potential parameters optimized to fit neutron data

  5. A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

    Energy Technology Data Exchange (ETDEWEB)

    Shiota, Koki, E-mail: a14510@sr.kagawa-nct.ac.jp; Kai, Kazuho; Nagaoka, Shiro, E-mail: nagaoka@es.kagawa-nct.ac.jp [National Institute of Technology, Kagawa College, Kagawa, Mitoyo, Takuma, Koda 551 (Japan); Tsuji, Takuto [National Institute of Technology, Suzuka College, Mie, Suzuka, Shiroko (Japan); Wakahara, Akihiro [Toyohashi University of Technology, Aichi, Toyohashi, Tenpaku, Hibarigaoka 1-1 (Japan); Rusop, Mohamad [University Technology Mara, Selangor, Shah Alam, 40450 (Malaysia)

    2016-07-06

    The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

  6. Through space and through bridge channels of charge transfer at p-n nano-junctions: A DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Dandu, Naveen [Department of Chemistry and Biochemistry, NDSU, Fargo, ND 58108 (United States); Tretiak, Sergei [Theoretical Division, Center for Nonlinear Studies (CNLS) and Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, 57069, NM 87454 (United States); Kilina, Svetlana [Department of Chemistry and Biochemistry, NDSU, Fargo, ND 58108 (United States); Kilin, Dmitri, E-mail: Dmitri.Kilin@ndsu.edu [Department of Chemistry and Biochemistry, NDSU, Fargo, ND 58108 (United States)

    2016-12-20

    Highlights: • Properties of interacting QDs depend on the fashion of interaction: through-bond or through-space. • The disconnected and undoped dimer models shows FÓ§rster band formation. • Dimer models with some doping exhibit degenerate charge-transfer excitons. • p- and n-doped qds shows polarization at the interface. • A photoexcitation polarizes p-n interface, in relation to phototovoltaic effect. - Abstract: Details of charge density distribution at p-n nano interface are analyzed with density functional theory techniques using model system of dimers of doped silicon quantum dots interacting through bond and through space. Spatial distributions of transition densities between the ground and excited states suggest the character of essential electronic excitations, which have a FÓ§rster, bound, unbound, or charge transfer character. A redistribution of electronic density from n-impurities to p-impurities results in a ground state polarization and creates an offset of energies of the bands localized on p-doped quantum dot and the bands localized on n-doped quantum dot. Although impurities contribute very few orbitals to the total density, a ground state charge redistribution and polarization are both responsible for the presence of a large number of charge transfer excitations involving solely silicon orbitals.

  7. Ultra-Shallow P+/N Junction Formation in Si Using Low Temperature Solid Phase Epitaxy Assisted with Laser Activation

    International Nuclear Information System (INIS)

    Hara, Shuhei; Tanaka, Yuki; Fukaya, Takumi; Matsumoto, Satoru; Suzuki, Toshiharu; Fuse, Genshu; Kudo, Toshio; Sakuragi, Susumu

    2008-01-01

    A combination of Ge pre-amorphization implantation (Ge-PAI), low-energy B implantation and laser annealing is a promising method to form highly-activated, abrupt and ultra-shallow junctions (USJ). In our previous report of IIT 2006, we succeeded in forming pn junctions less than 10 nm using non-melt double-pulsed green laser. However, a large leakage current under reverse bias was observed consequently due to residual defects in the implanted layer. In this study, a method to form USJ is proposed: a combination of low-temperature solid phase epitaxy and non-melt laser irradiation for B activation. Ge pre-amorphization implantation was performed at energy of 6 keV with a dose of 3x10 14 /cm 2 . Then B implantation was performed at energy of 0.2 keV with a dose of 1.2x10 15 /cm 2 . Samples were annealed at 400 deg. C for 10 h in nitrogen atmosphere. Subsequently, non-melt laser irradiation was performed at energy of 690 mJ/cm 2 and pulse duration of 100 ns with intervals of 300 ns. As a result, USJ around 10 nm with better crystallinity was successfully formed. And the leakage current of pn diodes was reduced significantly. Moreover, it is proven from secondary ion mass spectroscopy (SIMS) analysis that transient enhanced diffusion (TED) of B is specifically suppressed.

  8. Study of the (p,pn) reaction on 1p shell nuclei at 46 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Miller, C A

    1974-01-01

    The (p,pn) reaction on four 1p shell nuclei, /sup 6/Li, /sup 9/Be, /sup 13/C and /sup 12/C, as well as the /sup 6/Li(p,2p) reaction, have been studied at 46 MeV. The /sup 6/Li(p,pn) cross section was found to be approximately four times that for (p,2p) and to have a very different angular dependence. Both reactions show the s-state admixture in /sup 6/Li observed with (p,2p) at higher energies. For all of the target nuclei, the cross sections have features that cannot be fitted by a renormalized Plane Wave Impulse Approximation (PWIA) calculation. A zero range distorted wave calculation was found to be in only fair agreement with the /sup 9/Be and /sup 13/C data. The overall magnitudes of the results of the calculation were found to be very sensitive to the RMS radii of the bound state wave functions of the knocked-out neutrons.

  9. Forward $\\pi^{+-}$ production in p-$O_2$ and p-$N_2$ interactions at 12 GeV/c

    CERN Document Server

    Catanesi, M.G.; Edgecock, R.; Ellis, M.; Gossling, C.; Bunyatov, S.; Krasnoperov, A.; Popov, B.; Tereschenko, V.; Di Capua, E.; Vidal-Sitjes, G.; Artamonov, A.; Giani, S.; Gilardoni, S.; Gorbunov, P.; Grant, A.; Grossheim, A.; Ivanchenko, A.; Ivanchenko, V.; Kayis-Topaksu, A.; Panman, J.; Papadopoulos, I.; Tcherniaev, E.; Tsukerman, I.; Wiebusch, C.; Zucchelli, P.; Blondel, A.; Borghi, S.; Morone, M.C.; Prior, G.; Schroeter, R.; Meurer, C.; Gastaldi, U.; Mills, G.B.; Graulich, J.S.; Gregoire, G.; Bonesini, M.; Ferri, F.; Kirsanov, M.; Bagulya, A.; Grichine, V.; Polukhina, N.; Palladino, V.; Coney, L.; Schmitz, D.; Barr, G.; Bobisut, F.; Gibin, D.; Guglielmi, A.; Mezzetto, M.; Dumarchez, J.; Dore, U.; Orestano, D.; Pastore, F.; Tonazzo, A.; Tortora, L.; Booth, C.; Howlett, L.; Bogomilov, M.; Kolev, D.; Tsenov, R.; Piperov, Stefan; Temnikov, P.; Apollonio, M.; Chimenti, P.; Giannini, G.; Burguet-Castell, J.; Cervera-Villanueva, A.; Gomez-Cadenas, J.J.; Martin-Albo, J.; Sorel, M.

    2008-01-01

    Measurements of double-differential charged pion production cross-sections in interactions of 12 GeV/c protons on O_2 and N_2 thin targets are presented in the kinematic range 0.5 GeV/c < p_{\\pi} < 8 GeV/c and 50 mrad < \\theta_{\\pi} < 250 mrad (in the laboratory frame) and are compared with p--C results. For p--N_2 (p--O_2) interactions the analysis is performed using 38576 (7522) reconstructed secondary pions. The analysis uses the beam instrumentation and the forward spectrometer of the HARP experiment at CERN PS. The measured cross-sections have a direct impact on the precise calculation of atmospheric neutrino fluxes and on the improved reliability of extensive air shower simulations by reducing the uncertainties of hadronic interaction models in the low energy range. In particular, the present results allow the common hypothesis that p--C data can be used to predict the p--N_2 and p--O_2 pion production cross-sections to be tested.

  10. Synthesis and characterization of metal oxide semiconductors by a facile co-electroplating-annealing method and formation of ZnO/CuO pn heterojunctions with rectifying behavior

    Science.gov (United States)

    Turkdogan, Sunay; Kilic, Bayram

    2018-01-01

    We have developed a unique growth method and demonstrated the growth of CuO and ZnO semiconductor materials and the fabrication of their pn heterojunctions in ambient atmosphere. The pn heterojunctions were constructed using inherently p-type CuO and inherently n-type ZnO materials. Both p- and n-type semiconductors and pn heterojunctions were prepared using a simple but versatile growth method that relies on the transformation of electroplated Cu and Zn metals into CuO and ZnO semiconductors, respectively and is capable of a large-scale production desired in most of the applications. The structural, chemical, optical and electrical properties of the materials and junctions were investigated using various characterization methods and the results show that our growth method, materials and devices are quite promising to be utilized for various applications including but not limited to solar cells, gas/humidity sensors and photodetectors.

  11. Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer

    Science.gov (United States)

    Mase, Suguru; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

    2018-06-01

    We have demonstrated a vertical GaN-on-Si p-n diode with breakdown voltage (BV) as high as 839 V by using a low Si-doped strained layer superlattice (SLS). The p-n vertical diode fabricated by using the n‑-SLS layer as a part of the drift layer showed a remarkable enhancement in BV, when compared with the conventional n‑-GaN drift layer of similar thickness. The vertical GaN-on-Si p-n diodes with 2.3 μm-thick n‑-GaN drift layer and 3.0 μm-thick n‑-SLS layer exhibited a differential on-resistance of 4.0 Ω · cm2 and a BV of 839 V.

  12. Effects of electron and proton irradiations on n/p and p/n GaAs cells grown by MOCVD

    International Nuclear Information System (INIS)

    Weinberg, I.; Swartz, C.K.; Hart, R.E. Jr.

    1987-01-01

    State-of-the-art n/p and p/n heteroface GaAs cells, processed by metal organic chemical vapor deposition, were irradiated by 1 MeV electrons and 37 MeV protons and their performance determined as a function of fluence. It was found that the p/n cells were more radiation resistant than the n/p cells. The increased loss in the n/p cells was attributed to increases in series resistance and losses in the p-region resulting from the irradiation. The greater loss in fill factor observed for the n/p cells introduces the possibility that the presently observed superiority of the p/n cells may not be an intrinsic property of this configuration in GaAs

  13. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    International Nuclear Information System (INIS)

    Shamirzaev, S. H.; Gulyamov, G.; Dadamirzaev, M. G.; Gulyamov, A. G.

    2009-01-01

    The effect of heating of electrons and holes on the nonideality coefficient of the current-voltage characteristic for a p-n junction in a high microwave field is studied. It is established that the nonideality coefficient for a diode depends on the type of charge carriers that make the major contribution to the current in the p-n junction. It is shown that, in some cases in silicon samples, the nonideality coefficient for the diode is governed by the temperature for holes in spite of the fact that the temperature for electrons is higher than the temperature for holes.

  14. Krylov solvers preconditioned with the low-order red-black algorithm for the PN hybrid FEM for the instant code

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yaqi; Rabiti, Cristian; Palmiotti, Giuseppe, E-mail: yaqi.wang@inl.gov, E-mail: cristian.rabiti@inl.gov, E-mail: giuseppe.palmiotti@inl.gov [Idaho National Laboratory, Idaho Falls, ID (United States)

    2011-07-01

    This paper proposes a new set of Krylov solvers, CG and GMRes, as an alternative of the Red-Black (RB) algorithm on on solving the steady-state one-speed neutron transport equation discretized with PN in angle and hybrid FEM (Finite Element Method) in space. A pre conditioner with the low-order RB iteration is designed to improve their convergence. These Krylov solvers can reduce the cost of pre-assembling the response matrices greatly. Numerical results with the INSTANT code are presented in order to show that they can be a good supplement on solving the PN-HFEM system. (author)

  15. Total (p,n), (p,γ), (p,p'γ) and differential (p,p) cross-sections measurements for /sup 61,64/Ni

    International Nuclear Information System (INIS)

    Hershberger, R.L.; Gabbard, F.; Laird, C.E.

    1985-01-01

    Absolute total (p,n) and differential elastic (p,p) cross sections have been measured for /sup 61,64/Ni in the energy range of E/sub p/ = 2 to 7 MeV. The (p,γ) and (p,p'γ) cross sections were measured from as low an energy as feasible to approximately one MeV above the (p,n) threshold. Standard optical potentials have been used with a Hauser-Feshbach model to analyze the data. The adopted model values are used to deduce a total proton strength function which displays features of the 3s single particle resonance

  16. C-H and H-H Bond Activation via Ligand Dearomatization/Rearomatization of a PN3P-Rhodium(I) Complex

    KAUST Repository

    Huang, Kuo-Wei

    2015-04-13

    A neutral complex PN3P-Rh(I)Cl (2) was prepared from a reaction of the PN3P pincer ligand (1) with [Rh(COD)Cl]2 (COD = 1,5-cyclooctadiene). Upon treatment with a suitable base, H–H and Csp2–H activation reactions can be achieved through the deprotonation/reprotonation of one of the N–H arms and dearomatization/rearomatization of the central pyridine ring with the oxidation state of Rh remaining I.

  17. Krylov solvers preconditioned with the low-order red-black algorithm for the PN hybrid FEM for the instant code

    International Nuclear Information System (INIS)

    Wang, Yaqi; Rabiti, Cristian; Palmiotti, Giuseppe

    2011-01-01

    This paper proposes a new set of Krylov solvers, CG and GMRes, as an alternative of the Red-Black (RB) algorithm on on solving the steady-state one-speed neutron transport equation discretized with PN in angle and hybrid FEM (Finite Element Method) in space. A pre conditioner with the low-order RB iteration is designed to improve their convergence. These Krylov solvers can reduce the cost of pre-assembling the response matrices greatly. Numerical results with the INSTANT code are presented in order to show that they can be a good supplement on solving the PN-HFEM system. (author)

  18. Colonic GLP-2 is not sufficient to promote jejunal adaptation in a PN-dependent rat model of human short bowel syndrome

    DEFF Research Database (Denmark)

    Koopmann, Matthew C; Liu, Xiaowen; Boehler, Christopher J

    2009-01-01

    BACKGROUND: Bowel resection may lead to short bowel syndrome (SBS), which often requires parenteral nutrition (PN) due to inadequate intestinal adaptation. The objective of this study was to determine the time course of adaptation and proglucagon system responses after bowel resection in a PN...... and digestive capacity were assessed by mucosal mass, protein, DNA, histology, and sucrase activity. Plasma insulin-like growth factor I (IGF-I) and bioactive glucagon-like peptide 2 (GLP-2) were measured by radioimmunoassay. RESULTS: Jejunum cellularity changed significantly over time with resection...

  19. PN G068.1+11.0: A young pre-cataclysmic variable with an extremely hot primary

    Science.gov (United States)

    Mitrofanova, A. A.; Shimansky, V. V.; Borisov, N. V.; Spiridonova, O. I.; Gabdeev, M. M.

    2016-02-01

    An analysis of spectroscopic and photometric data for the young pre-cataclysmic variable (PCV) PN G068.1+11.0, which passed through its common-envelope stage relatively recently, is presented. The spectroscopic and photometric data were obtained with the 6-m telescope and Zeiss-1000 telescope of the Special Astrophysical Observatory. The light curves show sinusoidal brightness variations with the orbital-period time scale and brightness-variation amplitudes of Δ m = 1. m41, 1. m62, and 1. m57 in the B, V, and R bands, respectively. The system's spectrum exhibits weak HI (H β-H δ) andHeII λλ4541, 4686, 5411 Å absorption lines during the phases of minimum brightness, as well as HI, HeII, CIII, CIV, NIII, and OII emission lines whose intensity variations are synchronized with variations of the integrated brightness of the system. The emission-line formation in the spectra can be fully explained by the effects of fluorescence of the ultraviolet light from the primary at the surface of the cool star. All the characteristics of the optical light of PN G068.1+11.0 confirm that it is a young PCV containing sdO subdwarf. The radial velocities were measured from a blend of lines of moderately light elements, CIII+NIII λ4640 Å, which is formed at the surface of the secondary due to reflection effects. The ephemeris of the system has been improved through a joint analysis of the radial-velocity curves and light curves of pre-cataclysmic variable, using modelling of the reflection effects. The fundamental parameters of PN G068.1+11.0 have been determined using two evolutionary tracks for planetary-nebula nuclei of different masses (0.7 M ⊙and 0.78 M ⊙). The model spectra for the system and a comparison with the observations demonstrate the possibility of refining the components' effective temperatures if the quality of the spectra used is improved.

  20. Investigation of the reaction {sup 4}He(γ, pn)d at energies below the meson-production threshold

    Energy Technology Data Exchange (ETDEWEB)

    Khodyachikh, A. F.; Gorbenko, E. S.; Murtazin, R. T., E-mail: rumurtazin@gmail.com [Kharkiv Institute of Physics and Technology: National Science Center (Ukraine)

    2017-01-15

    The momentum distributions of deuterons and nucleons from the reaction {sup 4}He(γ, pn)d induced by bremsstrahlung photons whose spectrum extends up to the endpoint energy of 150 MeV were measured by means of a diffusion chamber placed in a magnetic field. These measurements were performed in four photon-energy intervals for deuterons and in the energy range between 100 and 150 MeV for nucleons. Angular and energy correlations of nucleons were measured at photon energies in the interval between 50 and 70 MeV. The results obtained in this way were analyzed on the basis of the quasideuteron model. The probability for final-state nucleon–deuteron interaction was estimated.

  1. The influence of defects produced by high energy electrons on the electrical characteristics of p-n junctions

    International Nuclear Information System (INIS)

    Koch, L.; Van Dong, N.

    1961-01-01

    The life-time of minority carriers in semi-conductors is very sensitive to the presence of defects introduced by high-energy electrons. The formation of defects thus affects the short-circuiting current and the open circuit voltage of a p-n junction, these being dependent on the life-time. In the work presented, we have bombarded several types of germanium and silicon junctions with 2 MeV electrons from a Van der Graaff, and with β-particles from radioactive sources. The experiments were carried out both at ordinary temperatures and that of liquid air. In this latter case an anomaly in the electron-volt effect was found: the short-circuiting current and the voltage in vacuo, after an initial decrease, increase again and exceed their initial maximum value before once more decreasing. A qualitative interpretation of this abnormal effect is given. (author) [fr

  2. Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system

    International Nuclear Information System (INIS)

    Chee, K W A; Beanland, R; Midgley, P A; Humphreys, C J

    2010-01-01

    Results from site-specific dopant profiling in a dual-beam FIB/SEM system are reported. Si specimens containing p-n junctions were milled using Ga + ion beam energies ranging from 30 keV to 2 keV, and analysed in situin the vacuum chamber. We compare the dopant contrast observed when milling a cleaved surface to that obtained from a side-wall of a trench cut using 30 kV Ga + ions, and using successively lower ion beam energies. The latter technique is suitable for site-specific dopant profiling. We find that lower energy ion beam milling significantly improves contrast, but only achieves 50 % of that observed on a freshly-cleaved surface. Furthermore, the contrast on a side-wall previously milled using high energy Ga + ions is less than that of a cleaved surface subjected to the same ion beam energy.

  3. On the formation of molecules and solid-state compounds from the AGB to the PN phases

    Science.gov (United States)

    García-Hernández, D. A.; Manchado, A.

    2016-07-01

    During the asymptoyic giant branch (AGB) phase, different elements are dredge- up to the stellar surface depending on progenitor mass and metallicity. When the mass loss increases at the end of the AGB, a circumstellar dust shell is formed, where different (C-rich or O-rich) molecules and solid-state compounds are formed. These are further processed in the transition phase between AGB stars and planetary nebulae (PNe) to create more complex organic molecules and inorganic solid-state compounds (e.g., polycyclic aromatic hydrocarbons, fullerenes, and graphene precursors in C-rich environments and oxides and crystalline silicates in O-rich ones). We present an observational review of the different molecules and solid-state materials that are formed from the AGB to the PN phases. We focus on the formation routes of complex fullerene (and fullerene-based) molecules as well as on the level of dust processing depending on metallicity.

  4. Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Barrett, N., E-mail: nick.barrett@cea.fr; Gottlob, D. M.; Mathieu, C.; Lubin, C. [SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex (France); Passicousset, J. [SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex (France); IFP Energies nouvelles, Rond-point de l’échangeur de Solaize, BP 3, 69360 Solaize (France); Renault, O.; Martinez, E. [University Grenoble-Alpes, 38000 Grenoble, France and CEA, LETI, MINATEC Campus, 38054 Grenoble (France)

    2016-05-15

    Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

  5. Performance of ultra high efficiency thin germanium p-n junction solar cells intended for solar thermophotovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Vera, E S; Loferski, J J; Spitzer, M; Schewchun, J

    1981-01-01

    The theoretical upper limit conversion efficiency as a function of cell thickness and junction position is calculated for a germanium p-n junction solar cell intended for solar thermophotovoltaic energy conversion which incorporates minority carrier mirrors and optical mirrors on both the front and back boundaries of the active part of the device. The optical mirrors provide light confinement reducing the thickness required for optimum performance while minority carrier mirrors diminish surface recombination of carriers which seriously reduce short circuit current and limit open circuit voltage. The role of non-ideal optical and minority carrier mirrors and the effect of resistivity variations are studied. The calculations are conducted under conditions of high incident power (2-25 W/cm/sup 2/) which are encountered in solar thermophotovoltaic energy conversion systems. 14 refs.

  6. El carricerín real (Acrocephalus melanopogon) en el P.N. del Prat de Cabanes-Torreblanca

    OpenAIRE

    Castany i Alvaro, Joan

    2003-01-01

    RESUMEN La investigación se centra en cinco aspectos relacionados con la biología y ecología de la especie. Tras una introducción sobre el área que se efectúa en el Capítulo 1º, se compara en el Capítulo 2º la composición y estructura de los paseriformes palustres nidificantes más representativos en cuatro zonas del P.N. del Prat de Cabanes-Torreblanca durante tres períodos de cría (1990, 1994, 1997) mediante transecto lineal. Y además, se describe comparativamente para el año 1994 la comp...

  7. Two dimensional MoS{sub 2}/graphene p-n heterojunction diode: Fabrication and electronic characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Su, Wei-Jhih [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Chang, Hsuan-Chen [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Shih, Yi-Ting [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Wang, Yi-Ping [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Hsu, Hung-Pin [Department of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, New Taipei City 24301, Taiwan (China); Huang, Ying-Sheng [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Lee, Kuei-Yi, E-mail: kylee@mail.ntust.edu.tw [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China)

    2016-06-25

    Molybdenum disulfide (MoS{sub 2}) films are currently the most potential semiconductor materials of the two-dimensional nano-material heterojunction. Few-layer MoS{sub 2} is an n-type semiconductor that has good mechanical strength, high carrier mobility, and has similar thickness as graphene. Graphene is presently the thinnest two-dimensional material with good thermal conductivity and high carrier mobility. The graphene Fermi level can be precisely controlled using the oxygen adsorption. Therefore, graphene can be tuned from zero-gap to p-type semiconductor material using the amount of adsorbed oxygen. In this study we combine few-layer MoS{sub 2} and graphene to produce a heterojunction and exhaustively study the interface properties for heterojunction diode application. According to the results, the MoS{sub 2} band-gap increases with decreasing thickness. The I–V characteristics of the MoS{sub 2}/Graphene p-n junction diodes can be precisely tuned by adjusting different thicknesses of the MoS{sub 2} films. By applying our fabricating method, MoS{sub 2}/Graphene heterojunction diode can be easily constructed and have potential to different applications. - Highlights: • We controlled the layer thickness of MoS{sub 2} by different exfoliation times. • We presented Raman scattering of MoS{sub 2} and define their layers number. • The few-layer MoS{sub 2}/graphene pn junction diode was synthesized. • We measured the device current and voltage characteristics. • The built-in potential barrier could be adjusted by controlling MoS{sub 2} thicknesses.

  8. Ancora sui tempi di tragitto delle Pn provenienti dalla Sicilia Tabelle numeriche per varie profondità ipocentrali

    Directory of Open Access Journals (Sweden)

    G. PANNOCCHIA

    1974-06-01

    Full Text Available This paper follows the foregoing studies by the A.A. already carried out on the earthquakes occurred in Western Sicily. The hypocentral data investigation concerning a further large earthquake of the swarm, has confirmed an hypocentral depth close to the "Molio". Grouping conveniently the investigated earthquakes it was possible to calculate the longitudinal waves travel-times curves at the following depths: 30, 35, 40, 45, 50, 00 km (A < 20°. Some interesting results concerning the first impulses of P„ waves have been found (existence of two series of waves, P,n and IJ„2 having a slightly different velocity. Five curves for each examined h have been calculated; the P„ (the general using all the onsets including the ones whose residuals resulted later to be about three seconds: the Pni and the P„2 representing a Pn subdivision obtained by reducing the residuals range: the P„ -^13° and the P„ (10°M 20° for 2» < A < 13° and 10° < A < 20° respectively calculated. (The P„ 13° approaches to a straight line, in accordance with other estimations for curves investigated along shorter paths. The paper contains also all numerical tables related to 29 travel-times curves calculated every 20 km; as well as the curve corresponding to li = 17.5 km. The last curve has been obtained averaging the values of depth from 5 km to 30 km in order to fill the gap 0 i—i 30 km.

  9. Extraction of Pn seismic signals from air-gun shots recorded by the Cascadia Amphibious seismic experiment

    Science.gov (United States)

    Rathnayaka, S.; Gao, H.

    2017-12-01

    The goal of this study is to extract Pn (head wave) seismic waveforms recorded by both offshore and onshore (broadband and short period) seismic stations and evaluate the data quality. Two offshore active-source seismic experiments, MGL 1211 and MGL 1212, were conducted from 13th June to 24th July 2012, during the first year deployment of the Cascadia Initiative Amphibious Array. In total, we choose 110 ocean bottom seismometers and 209 inland stations that are located along the entire Cascadia subduction zone. We first remove the instrument response, and then explore the potential frequency ranges and the diurnal effect. We make the common receiver gathering for each seismic station and filter the seismic waveforms at multiple frequency bands, ranging from 3-5 Hz, 5-10 Hz, 10-20 Hz, to 20-40 Hz, respectively. To quantitatively evaluate the data quality, we calculate the signal-to-noise ratio (SNR) of the waveforms for usable stations that record clear Pn arrivals at multiple frequency bands. Our results show that most offshore stations located at deep water (>1.5 km) record clear air-gun shot signals at frequencies higher than 3 Hz and up to 550 km away from the source. For most stations located on the shallow continental shelf, the seismic recordings appear much noisier at all the frequencies compared to stations at deep water. Three general trends are observed for the SNR distribution; First, the SNR ratio increases from lower to higher frequency bands; Second, the ratio decreases with the increasing source-to-receiver distance; And third, the ratio increases from shallow to deep water. We also observe a rough negative relationship of the signal-to-noise ratio with the thickness of the marine sediment. Only 5 inland stations record clear air-gun shot arrivals up to 200 km away from the source. More detailed data quality analysis with more results will also be present.

  10. High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction.

    Science.gov (United States)

    Yu, Jingjing; Javaid, Kashif; Liang, Lingyan; Wu, Weihua; Liang, Yu; Song, Anran; Zhang, Hongliang; Shi, Wen; Chang, Ting-Chang; Cao, Hongtao

    2018-03-07

    A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium-gallium-zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO x /IGZO heterojunction structure, through which the formation of a p-n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV-visible rejection ratio up to 3.5 × 10 7 , and a specific detectivity up to 3.3 × 10 14 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays.

  11. Astrocyte-like glial cells physiologically regulate olfactory processing through the modification of ORN-PN synaptic strength in Drosophila.

    Science.gov (United States)

    Liu, He; Zhou, Bangyu; Yan, Wenjun; Lei, Zhengchang; Zhao, Xiaoliang; Zhang, Ke; Guo, Aike

    2014-09-01

    Astrocyte-like glial cells are abundant in the central nervous system of adult Drosophila and exhibit morphology similar to astrocytes of mammals. Previous evidence has shown that astrocyte-like glial cells are strongly associated with synapses in the antennal lobe (AL), the first relay of the olfactory system, where olfactory receptor neurons (ORNs) transmit information into projection neurons (PNs). However, the function of astrocyte-like glia in the AL remains obscure. In this study, using in vivo calcium imaging, we found that astrocyte-like glial cells exhibited spontaneous microdomain calcium elevations. Using simultaneous manipulation of glial activity and monitoring of neuronal function, we found that the astrocyte-like glial activation, but not ensheathing glial activation, could inhibit odor-evoked responses of PNs. Ensheathing glial cells are another subtype of glia, and are of functional importance in the AL. Electrophysiological experiments indicated that astrocyte-like glial activation decreased the amplitude and slope of excitatory postsynaptic potentials evoked through electrical stimulation of the antennal nerve. These results suggest that astrocyte-like glial cells may regulate olfactory processing through negative regulation of ORN-PN synaptic strength. Beyond the antennal lobe we observed astrocyte-like glial spontaneous calcium activities in the ventromedial protocerebrum, indicating that astrocyte-like glial spontaneous calcium elevations might be general in the adult fly brain. Overall, our study demonstrates a new function for astrocyte-like glial cells in the physiological modulation of olfactory information transmission, possibly through regulating ORN-PN synapse strength. © 2014 Federation of European Neuroscience Societies and John Wiley & Sons Ltd.

  12. Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

    Science.gov (United States)

    Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

    2018-04-01

    For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

  13. Tuning of optical and electrical properties of wide band gap Fe:SnO{sub 2}/Li:NiO p-n junctions using 80 MeV oxygen ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, Bhaumik V.; Joshi, U.S. [Gujarat University, Department of Physics, School of Sciences, Ahmedabad (India); Avasthi, D.K. [Inter University Accelerator Centre, New Delhi (India)

    2016-12-15

    Electrical and optical properties of pristine and swift heavy ion (SHI) irradiated p-n junction diode have been investigated for advanced electronics application. Fe:SnO{sub 2}/Li:NiO p-n junction was fabricated by using pulsed laser deposition on c-sapphire substrate. The optical band gaps of Fe:SnO{sub 2} and Li:NiO films were obtained to be 3.88 and 3.37 eV, respectively. The current-voltage characteristics of the oxide-based p-n junction showed a rectifying behaviour with turn-on voltage of 0.95 V. The oxide-based p-n junction diode was irradiated to 80 MeV O{sup +6} ions with 1 x 10{sup 12} ions/cm{sup 2} fluence. Decrease in grain size due to SHI irradiation is confirmed by the grazing angle X-ray diffraction and atomic force microscopy. In comparison with the pristine p-n junction diode, O{sup +6} ion irradiated p-n junction diode shows the increase of surface roughness and decrease of percentage transmittance in visible region. For irradiated p-n junction diode, current-voltage curve has still rectifying behaviour but exhibits lower turn-on voltage than that of virgin p-n junction diode. (orig.)

  14. Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3

    NARCIS (Netherlands)

    Zhang, Jiaye; Han, Shaobo; Luo, Weihuang; Xiang, Shuhuai; Zou, Jianli; Oropeza, Freddy E.; Gu, Meng; Zhang, Kelvin H.L.

    2018-01-01

    Transparent oxide semiconductors hold great promise for many optoelectronic devices such as transparent electronics, UV-emitting devices, and photodetectors. A p-n heterojunction is the most ubiquitous building block to realize these devices. In this work, we report the fabrication and

  15. An efficient p-n heterojunction photocatalyst constructed from a coordination polymer nanoplate and a partically reduced graphene oxide for visible-light hydrogen production.

    Science.gov (United States)

    Xu, Xinxin; Lu, Tingting; Liu, Xiaoxia; Wang, Xiuli

    2015-10-05

    A new p-n heterojunction photocatalyst has been synthesized successfully through chemical-bond-mediated combination of coordination polymer nanoplates (CPNPs) and partially reduced graphene oxide (PRGO) with a simple colloidal blending process. Photocatalytic H2 production by the p-n heterojunction photocatalyst PRGO/CPNP was investigated under visible-light irradiation, which illustrates that PRGO/CPNP exhibits a much higher photocatalytic H2 production rate than neat the CPNPs. The improvement of this photocatalytic property can be attributed to the inner electrical field formed in the p-n heterojunction, which impedes recombination of photogenerated electrons and holes. In PRGO/CPNP, the existence of the p-n heterojunction has been confirmed by electrochemical methods clearly. For PRGO/CPNP, the reductive degree of the PRGO has a great influence on the H2 production rate and an ideal condition to get a PRGO/CPNP photocatalyst with higher performance has been obtained. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Interpretation of some (p,n), (n,p), and (3He, p) reactions by means of the statistical multistep compound emission theory

    International Nuclear Information System (INIS)

    Bonetti, R.; Milazzo, L.C.; Melanotte, M.

    1983-01-01

    A number of (p,n), (n,p), and ( 3 He, p) reactions have been interpreted on the basis of the statistical multistep compound emission mechanism. Good agreement with experiment is found both in spectrum shape and in the value of the coherence widths

  17. Selective Catalytic Hydrogenation of Arenols by a Well-Defined Complex of Ruthenium and Phosphorus–Nitrogen PN3–Pincer Ligand Containing a Phenanthroline Backbone

    KAUST Repository

    Li, Huaifeng; Wang, Yuan; Lai, Zhiping; Huang, Kuo-Wei

    2017-01-01

    Selective catalytic hydrogenation of aromatic compounds is extremely challenging using transition-metal catalysts. Hydrogenation of arenols to substituted tetrahydronaphthols or cyclohexanols has been reported only with heterogeneous catalysts. Herein, we demonstrate the selective hydrogenation of arenols to the corresponding tetrahydronaphthols or cyclohexanols catalyzed by a phenanthroline-based PN3-ruthenium pincer catalyst.

  18. Relationship between the mechanical properties of epoxy/PMMA-b-PnBA-b-PMMA block copolymer blends and their three-dimensional nanostructures

    Directory of Open Access Journals (Sweden)

    H. Kishi

    2017-10-01

    Full Text Available Nanostructures of diglycidyl ether of bisphenol-A epoxy/poly(methyl methacrylate-b-poly(n-butyl acrylate-b-poly(methyl methacrylate (PMMA-b-PnBA-b-PMMA triblock copolymer (BCP blends were studied in relation to their mechanical properties. Three types of self-assembled nanostructures, such as spheres, random cylinders, and curved lamella, were controlled in phenol novolac-cured epoxy blends with a wide range of BCP content. Three types of nanostructures were observed using two-dimensional and three-dimensional transmission electron microscopy (TEM. The 3D-TEM, dynamic viscoelastic analyses, and theoretical model on the elastic modulus clarified that the spheres and the random cylinders, consisted of epoxy-immiscible PnBA phases, were discontinuously dispersed in the epoxy matrix. In contrast, the curved lamella formed co-continuous nanostructure, in which both the PnBA and epoxy phases formed continuous channels. The fracture toughness (critical strain energy release rate, GIC and the flexural moduli of elasticity (E of the cured blends were evaluated for various amounts of BCP content. The highest GIC was obtained from the random cylindrical nanostructured blends in the three types of nanostructures with the same PnBA content. The lowest E was obtained for the curved lamella with co-continuous nanostructures. The details of deformation and fracture events were observed using optical and electron microscopy, and the mechanical properties are discussed in relation to the nanostructures.

  19. A p-n heterojunction of CuI/TiO2 with enhanced photoelectrocatalytic activity for methanol electro-oxidation

    International Nuclear Information System (INIS)

    Sun, Mingjuan; Hu, Jiayue; Zhai, Chunyang; Zhu, Mingshan; Pan, Jianguo

    2017-01-01

    Highlights: •A p-n heterojunction of CuI/TiO 2 is constructed. •CuI/TiO 2 is used as the support for depositing Pt nanoparticles. •Enhanced catalytic activity of MOR by using Pt-CuI/TiO 2 under light irradiation. •Improved charger separation contributes to enhanced photoelectrocatalytic activity. -- Abstract: In this paper, a p-n heterojunction including p-type CuI and n-type TiO 2 is first time constructed to be the support for the deposition of Pt. The as-prepared Pt-CuI/TiO 2 modified electrode is studied for the electrocatalytic oxidation of methanol both in dark and under light illumination. Compare to traditional electrocatalytic oxidation, the electrocatalytic activity of Pt-CuI/TiO 2 for methanol oxidation is improved with 4.0 times upon light illumination. Moreover, compare to bare CuI and TiO 2 upon light illumination, the heterostructure of CuI/TiO 2 displays 4.3 and 9.1 times enhanced electrocatalytic activity for methanol oxidation, respectively. The synergistic effects of photocatalysis and electrocatalysis as well as the effective charge transport in the p-n heterojunction of Pt-CuI/TiO 2 contribute such big enhancement. The present studies indicate that the constructing of p-n heterojunction provides more insights in the fields of photoelectrochemical and photo–assisted fuel cell system.

  20. Transparent CH{sub 3}NH{sub 3}SnCl{sub 3}/Al-ZnO p-n heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Sunil, E-mail: skbgudha@gmail.com; Ansari, Mohd Zubair; Khare, Neeraj [Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi, Delhi-110016 (India)

    2016-05-23

    A p-type Organic inorganic tin chloride (CH{sub 3}NH{sub 3}SnCl{sub 3}) perovskite thin film has been synthesized by solution method. An n-type 1% Al doped ZnO (AZO) film has been deposited on FTO substrate by ultrasonic assisted chemical vapor deposition technique. A transparent CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction diode has been fabricated by spin coating technique. CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction shows 75% transparency in the visible region. I-V characteristic of CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction shows rectifying behavior of the diode. The diode parameters calculated as ideality factor η=2.754 and barrier height Φ= 0.76 eV. The result demonstrates the potentiality of CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction for transparent electronics.

  1. Selective Catalytic Hydrogenation of Arenols by a Well-Defined Complex of Ruthenium and Phosphorus–Nitrogen PN3–Pincer Ligand Containing a Phenanthroline Backbone

    KAUST Repository

    Li, Huaifeng

    2017-05-30

    Selective catalytic hydrogenation of aromatic compounds is extremely challenging using transition-metal catalysts. Hydrogenation of arenols to substituted tetrahydronaphthols or cyclohexanols has been reported only with heterogeneous catalysts. Herein, we demonstrate the selective hydrogenation of arenols to the corresponding tetrahydronaphthols or cyclohexanols catalyzed by a phenanthroline-based PN3-ruthenium pincer catalyst.

  2. The effect of dephasing on edge state transport through p-n junctions in HgTe/CdTe quantum wells.

    Science.gov (United States)

    Zhang, Ying-Tao; Song, Juntao; Sun, Qing-Feng

    2014-02-26

    Using the Landauer-Büttiker formula, we study the effect of dephasing on the transport properties of the HgTe/CdTe p-n junction. It is found that in the HgTe/CdTe p-n junction the topologically protected gapless helical edge states manifest a quantized 2e²/h plateau robust against dephasing, in sharp contrast to the case for the normal HgTe/CdTe quantum well. This robustness of the transport properties of the edge states against dephasing should be attributed to the special construction of the HgTe/CdTe p-n junction, which limits the gapless helical edge states to a very narrow region and thus weakens the influence of the dephasing on the gapless edge states to a large extent. Our results demonstrate that the p-n junction could be a substitute device for use in experimentally observing the robust edge states and quantized plateau. Finally, we present a feasible scheme based on current experimental methods.

  3. Synthesis of group 10 metal complexes with a new unsymmetrical PN3P-pincer ligand through ligand post-modification: Structure and reactivity

    KAUST Repository

    Wang, Xiufang

    2017-01-01

    A post-modification strategy are used to synthesize a new class of diimine-amido PN3P-pincer group-10 transition metal complexes. The coordination chemistry and the thermal stabilities of their organometallic derivatives are characterized and investigated.

  4. Novel Ag{sub 3}PO{sub 4}/MoO{sub 3}p-n heterojunction with enhanced photocatalytic activity and stability under visible light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Teng, Wei, E-mail: tengw@just.edu.cn [Department of Environmental and Chemical Engineering, Jiangsu University of Science and Technology, Zhenjiang, 212003 (China); Tan, Xiangjun [Department of Environmental and Chemical Engineering, Jiangsu University of Science and Technology, Zhenjiang, 212003 (China); Li, Xinyong [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Sciences and Technology, Dalian University of Technology, Dalian, 116024 (China); Tang, Yubin [Department of Environmental and Chemical Engineering, Jiangsu University of Science and Technology, Zhenjiang, 212003 (China)

    2017-07-01

    Graphical abstract: Excellent photocatalytic activity and stability are achieved over Ag{sub 3}PO{sub 4}/MoO{sub 3}p-n heterostructure nanocatalyst, which was increased the charge separation efficiencies. - Highlights: • The Ag{sub 3}PO{sub 4}/MoO{sub 3}p-n heterostructure nanocatalyst was synthesized successfully. • The composite nanocatalyst possesses excellent photocatalytic activity and stability. • The effective separation of electron-hole pairs were mainly depend on the inner electric field of p-n heterojunction. - Abstract: Ag{sub 3}PO{sub 4}/MoO{sub 3}p-n heterojunction have been successfully fabricated by using a simple in situ solvent method. SEM, TEM, XRD, XPS and electrochemical techniques were used to study the structural and electrochemical characteristics of the resulting materials. The photocatalytic activity of the obtained composite was tested by the degradation of organic dye (methylene blue) under visible-light irradiation. The photocatalytic activity of Ag{sub 3}PO{sub 4}/MoO{sub 3} remained 92.5% after four recycling runs, which was much higher than that of the pure Ag{sub 3}PO{sub 4} (54%). The obtained results confirm that the novel Ag{sub 3}PO{sub 4}/MoO{sub 3} heterostructure exhibited significantly higher photocatalytic activities and improved stability compared with bare Ag{sub 3}PO{sub 4}. The excellent photocatalytic activity came from the effective separation of the electron-hole pairs under the effect of built-in electric field in the interfacial the of the p-n heterojunction, and then made the holes more available for dyes oxidation.

  5. Applications of a pnCCD detector coupled to columnar structure CsI(Tl) scintillator system in ultra high energy X-ray Laue diffraction

    Science.gov (United States)

    Shokr, M.; Schlosser, D.; Abboud, A.; Algashi, A.; Tosson, A.; Conka, T.; Hartmann, R.; Klaus, M.; Genzel, C.; Strüder, L.; Pietsch, U.

    2017-12-01

    Most charge coupled devices (CCDs) are made of silicon (Si) with typical active layer thicknesses of several microns. In case of a pnCCD detector the sensitive Si thickness is 450 μm. However, for silicon based detectors the quantum efficiency for hard X-rays drops significantly for photon energies above 10 keV . This drawback can be overcome by combining a pixelated silicon-based detector system with a columnar scintillator. Here we report on the characterization of a low noise, fully depleted 128×128 pixels pnCCD detector with 75×75 μm2 pixel size coupled to a 700 μm thick columnar CsI(Tl) scintillator in the photon range between 1 keV to 130 keV . The excellent performance of the detection system in the hard X-ray range is demonstrated in a Laue type X-ray diffraction experiment performed at EDDI beamline of the BESSY II synchrotron taken at a set of several GaAs single crystals irradiated by white synchrotron radiation. With the columnar structure of the scintillator, the position resolution of the whole system reaches a value of less than one pixel. Using the presented detector system and considering the functional relation between indirect and direct photon events Laue diffraction peaks with X-ray energies up to 120 keV were efficiently detected. As one of possible applications of the combined CsI-pnCCD system we demonstrate that the accuracy of X-ray structure factors extracted from Laue diffraction peaks can be significantly improved in hard X-ray range using the combined CsI(Tl)-pnCCD system compared to a bare pnCCD.

  6. Biofeedback, cognitive-behavioral methods, and hypnosis in dermatology: is it all in your mind?

    Science.gov (United States)

    Shenefelt, Philip D

    2003-01-01

    Biofeedback can improve cutaneous problems that have an autonomic nervous system component. Examples include biofeedback of galvanic skin resistance (GSR) for hyperhidrosis and biofeedback of skin temperature for Raynaud's disease. Hypnosis may enhance the effects obtained by biofeedback. Cognitive-behavioral methods may resolve dysfunctional thought patterns (cognitive) or actions (behavioral) that damage the skin or interfere with dermatologic therapy. Responsive diseases include acne excoriée, atopic dermatitis, factitious cheilitis, hyperhidrosis, lichen simplex chronicus, needle phobia, neurodermatitis, onychotillomania, prurigo nodularis, trichotillomania, and urticaria. Hypnosis can facilitate aversive therapy and enhance desensitization and other cognitive-behavioral methods. Hypnosis may improve or resolve numerous dermatoses. Examples include acne excoriée, alopecia areata, atopic dermatitis, congenital ichthyosiform erythroderma, dyshidrotic dermatitis, erythromelalgia, furuncles, glossodynia, herpes simplex, hyperhidrosis, ichthyosis vulgaris, lichen planus, neurodermatitis, nummular dermatitis, postherpetic neuralgia, pruritus, psoriasis, rosacea, trichotillomania, urticaria, verruca vulgaris, and vitiligo. Hypnosis can also reduce the anxiety and pain associated with dermatologic procedures.

  7. 308nm Excimer Laser in Dermatology

    Science.gov (United States)

    Mehraban, Shadi

    2014-01-01

    308nm xenon-chloride excimer laser, a novel mode of phototherapy, is an ultraviolet B radiation system consisting of a noble gas and halide. The aim of this systematic review was to investigate the literature and summarize all the experiments, clinical trials and case reports on 308-nm excimer laser in dermatological disorders. 308-nm excimer laser has currently a verified efficacy in treating skin conditions such as vitiligo, psoriasis, atopic dermatitis, alopecia areata, allergic rhinitis, folliculitis, granuloma annulare, lichen planus, mycosis fungoides, palmoplantar pustulosis, pityriasis alba, CD30+ lympho proliferative disorder, leukoderma, prurigo nodularis, localized scleroderma and genital lichen sclerosus. Although the 308-nm excimer laser appears to act as a promising treatment modality in dermatology, further large-scale studies should be undertaken in order to fully affirm its safety profile considering the potential risk, however minimal, of malignancy, it may impose. PMID:25606333

  8. Sb{sub 2}S{sub 3}:C/CdS p-n junction by laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Arato, A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Cardenas, E. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); O' Brien, J.J.; Liu, J. [Center for Nanoscience, University of Missouri-St. Louis, One University Boulevard, St. Louis, Missouri-63121 (United States); Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One University Boulevard, St. Louis, Missouri-63121 (United States); Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)], E-mail: bkrishnan@fime.uanl.mx

    2009-02-02

    In this paper, we report laser irradiated carbon doping of Sb{sub 2}S{sub 3} thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb{sub 2}S{sub 3} thin films of approximately 0.5 {mu}m in thickness. Sb{sub 2}S{sub 3} thin films were prepared from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 deg. C for 5 h and the films obtained were highly resistive. These C/Sb{sub 2}S{sub 3} thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb{sub 2} S{sub 3}:C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb{sub 2}S{sub 3}:C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl{sub 2}, sodium citrate, NH{sub 4}OH and thiourea at 70 deg. C . On the CdS film, Sb{sub 2}S{sub 3}/C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb{sub 2}S{sub 3} side facing the beam. The p-n junction formed by p-Sb{sub 2}S{sub 3}:C and n-type CdS showed V{sub oc} = 500 mV and J{sub sc} = 0.5 mA/cm{sup 2} under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing.

  9. Electrical transport through Pb(Zr,Ti)O3 p-n and p-p heterostructures modulated by bound charges at a ferroelectric surface: Ferroelectric p-n diode

    Science.gov (United States)

    Watanabe, Yukio

    1999-05-01

    Current through (Pb,La)(Zr,Ti)O3 ferroelectrics on perovskite semiconductors is found to exhibit diode characteristics of which polarity is universally determined by the carrier conduction-type semiconductors. A persisting highly reproducible resistance modulation by a dc voltage, which has a short retention, is observed and is ascribed to a band bending of the ferroelectric by the formation of charged traps. This interpretation is consistent with a large relaxation current observed at a low voltage. On the other hand, a reproducible resistance modulation by a pulse voltage, which has a long retention, is observed in metal/(Pb,La)(Zr,Ti)O3/SrTiO3:Nb but not in metal/(Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 and is attributed to a possible band bending due to the spontaneous polarization (P) switching. The observed current voltage (IV) characteristics, the polarity dependence, the relaxation, and the modulation are explicable, if we assume a p-n or a p-p junction at the ferroelectric semiconductor interface (p: hole conduction type, n: electron conduction type). The analysis suggests that an intrinsically inhomogeneous P (∇P) near the ferroelectric/metal interface is likely very weak or existing in a very thin layer, when a reaction of the metal with the ferroelectric is eliminated. Additionally, the various aspects of transport through ferroelectrics are explained as a transport in the carrier depleted region.

  10. Competition of the Peierls relief and structural defects in damping the domain walls in [Mn left brace (R/S)-pn right brace]2[Mn left brace(R/S)-pn right brace2(H2O)][Cr(CN)6]2 ferrimagnet

    International Nuclear Information System (INIS)

    Talantsev, A.D.; Kollak, O.V.; Kirman, M.V.; Morgunov, R.B.

    2015-01-01

    The [ [Mn left brace (R/S)-pn right brace] 2 [Mn left brace(R/S)-pn right brace 2 (H 2 O)][Cr(CN) 6 ] 2 molecular ferrimagnet exhibits an inverse sequence of changes in the domain wall motion regimes with increasing temperature in alternative magnetic field of 0.04-1400 Hz frequency. Initiation of the relaxation regime on the background of creep indicates that there are two different systems of the domain walls damping. The threshold amplitude of the alternative magnetic field corresponds to the Peierls relief contribution to the domain wall dynamics as well as the defect contribution usually considered.

  11. An experimental study of 99Tcm-PnAO-nitroimidazole and 99Tcm-HL91 in detection of myocardial hypoxia

    International Nuclear Information System (INIS)

    Yao Zhiming; Liu Xiujie; Shi Rongfang; Guo Feng; Liu Yunzhong; Wang Qi; Wei Hongxing; Zhu Lin

    1999-01-01

    Objective: To investigate the biological characteristics of two hypoxic-avid imaging agents, 99 Tc m -PnAO-nitroimidazole and 99 Tc m -HL91, and the experimental myocardial hypoxia, low perfusion and ischemic reperfusion were performed. Methods: Isolated rat hearts were retrograde perfused with Kerbs-Henscleit buffer (KH) in four phantoms: control, low perfusion, ischemic reperfusion and hypoxia. Control hearts were perfused with 95% O 2 and 5% CO 2 balanced KH at 9∼10 mL/min rate. Low perfusion hearts were perfused with the same KH at 1 mL/min rate, and ischemic reperfusion rat hearts were discontinued perfusion for 20 min then reperfused with the same KH. Hypoxic hearts were perfused with 100% N 2 balanced KH. Results: 1) At 30 and 60 min, the radioactivity ratio of liver to heart (L/H) was 11.6 and 6.9 ( 99 Tc m -PnAO-nitroimidazole), and 5.7 and 6.2 ( 99 Tc m -HL91), respectively. The lung to heart ratios at 60 min of 99 Tc m -PnAO-nitroimidazole and 99 Tc m -HL91 were 1.8 and 2.1, respectively 2) The accumulation of 99 Tc m -PnAo-nitroimidazole in the hypoxic, low perfusion and ischemic hearts was 4.8, 3.7 and 2.8 times that in the control hearts. At 60 min after starting washout, the retentions of 99 Tc m -PnAO-nitroimidazole in hypoxic, low flow and ischemic reperfusion myocardium were much higher than that of control hearts [(23.7 +- 9.1)%]. The accumulation of 99 Tc m -HL91 in the hypoxic and low perfusion hearts was also significantly higher than that in the control and ischemic reperfusion hearts, P 99 Tc m -HL91 in the low perfusion heart was 5.34, 3.43 and 1.23 times those of control, ischemic reperfusion and hypoxic hearts, respectively. Conclusions: 99 Tc m -PnAO-nitroimidazole can be accumulated in low perfusion, ischemic reperfusion and hypoxic hearts, while 99 Tc m -HL91 is mainly accumulated in hypoxic, specially low perfusion hearts. Since there is a high L/H in perfusions with either agent, the detecting of inferoposterior wall may be

  12. Oxide p-n Heterojunction of Cu2O/ZnO Nanowires and Their Photovoltaic Performance

    Directory of Open Access Journals (Sweden)

    Seung Ki Baek

    2013-01-01

    Full Text Available Oxide p-n heterojunction devices consisting of p-Cu2O/n-ZnO nanowires were fabricated on ITO/glass substrates and their photovoltaic performances were investigated. The vertically arrayed ZnO nanowires were grown by metal organic chemical vapor deposition, which was followed by the electrodeposition of the p-type Cu2O layer. Prior to the fabrication of solar cells, the effect of bath pH on properties of the absorber layers was studied to determine the optimal condition of the Cu2O electrodeposition process. With the constant pH 11 solution, the Cu2O layer preferred the (111 orientation, which gave low electrical resistivity and high optical absorption. The Cu2O (pH 11/ZnO nanowire-based solar cell exhibited a higher conversion efficiency of 0.27% than the planar structure solar cell (0.13%, because of the effective charge collection in the long wavelength region and because of the enhanced junction area.

  13. Vertical MoSe2-MoO x p-n heterojunction and its application in optoelectronics

    Science.gov (United States)

    Chen, Xiaoshuang; Liu, Guangbo; Hu, Yunxia; Cao, Wenwu; Hu, PingAn; Hu, Wenping

    2018-01-01

    The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO2/Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ˜8 μm. Vertical MoSe2-MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe2-MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W-1, 0.85 × 108 Jones, and 1665.6%, respectively, at V ds = 5 V with the light wavelength of 254 nm under 0.29 mW cm-2. These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.

  14. Zn doping induced conductivity transformation in NiO films for realization of p-n homo junction diode

    Science.gov (United States)

    Dewan, Sheetal; Tomar, Monika; Tandon, R. P.; Gupta, Vinay

    2017-06-01

    Mixed transition metal oxide, zinc doped NiO, Z n x N i 1 - x O (x = 0, 0.01, 0.02, 0.05, and 0.10), thin films have been fabricated by the RF magnetron sputtering technique in an oxygen deficit ambience at a growth temperature of 400 °C. The present report highlights the effect of Zn doping in NiO thin films on its structural, optical, and electrical properties. Optical transmission enhancement and band gap engineering in a-axis oriented NiO films have been demonstrated via Zn substitution. Hall effect measurements of the prepared samples revealed a transition from p-type to n-type conductivity in NiO at 2% Zn doping. A NiO based transparent p-n homojunction diode has been fabricated successfully, and the conduction mechanism dominating the diode properties is reported in detail. Current-voltage (I-V) characteristics of the homojunction diode are found to obey the Space Charge Limited Conduction mechanism with non-ideal square law behaviour.

  15. Counterdoped very shallow p+/n junctions obtained by B and Sb implantation and codiffusion in Si

    Science.gov (United States)

    Solmi, Sandro

    1998-02-01

    In this article we investigate the B and Sb codiffusion upon postimplantation annealing in order to fabricate very shallow p+/n junctions (⩽70 nm), suitable for a complementary metal-oxide-semiconductor technology with a channel length of 0.18 μm. The junctions are prepared by implanting Sb and subsequently BF2, at a higher dose, in an n-type Si substrate. The preamorphization with Sb avoids the B channeling and increases the n-type doping in the junction region, thus confining the depth of the p layer. Furthermore, both the transient enhanced diffusion, being the B implanted in a preamorphized layer, and the standard diffusion, due to the pairing between donors and acceptors, are strongly reduced. This procedure allows us to obtain very shallow junctions even after annealings with relatively high thermal budget, like 800 °C/8 h or 900 °C/1 h, or 950 °C/10 min or 1000 °C/60 s. We verified that dopant diffusion is strongly affected by a direct donor-acceptor interaction, and that good prediction of the experimental results can only be obtained using a simulation code which takes into account the formation of neutral, near immobile, Sb-B pairs.

  16. Radiation measurements by pn junction InSb detector at the temperature from 4.2 K to 115 K

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yoshihara, Fumiki; Nouchi, Ryo; Sugiura, Osamu; Murase, Yasuhiro; Nakamura, Tatsuya; Katagiri, Masaki

    2003-01-01

    We fabricated the pn junction-type detectors on a p-type InSb substrate. Both sides of the InSb substrate were etched using a mixture of nitric and lactic acids. On the top side surface, Sn and Al were deposited by heat evaporation and then the Sn was diffused into the p-type InSb by lamp annealing and resulted in the n-type layer. Based on the confirmation of the performance of the InSb detector at temperatures of 0.5 K and 4.2 K, we concentrated on the measurement of alpha particles by the pm junction-type InSb detectors at higher operating temperatures of up to 115 K. The InSb detector showed a wide temperature operating range. We can conclude that all of the voltage was induced slowly by the holes at 4.2 K and mainly as a result of electrons at 77 K. (T. Tanaka)

  17. The 2H(p,2p)n reaction at 508 MeV. Part I

    International Nuclear Information System (INIS)

    Punjabi, V.; Perdrisat, C.F.; Aniol, K.A.; Epstein, M.B.; Huber, J.P.; Margaziotis, D.J.; Bracco, A.; Davis, C.A.; Gubler, H.P.; Lee, W.P.; Poffenberger, P.R.; van Oers, W.T.H.; Postma, H.; Sebel, H.J.; Stetz, A.W.

    1988-09-01

    Differential cross sections for the reaction 2 H(p,2p)n at T p = 507 and 508 MeV are presented. The proton angle pairs chosen were 41.5 degrees with 41.4 and 50.0, 30.1 degrees with 44.0, 53,75, 61.0, and 68.0, 38.1 degrees -38.0 degrees, 44.1 degrees - 44.0 degrees, 47.1 degrees - 47.0 degrees and 50.0 degrees - 50.0 degrees. The data range over an energy window 100 MeV wide on one of the proton energies, the second energy being defined by the kinematic condition of a single neutron recoiling. The data are compared with the impulse approximation (IA) prediction and with the results of a nonrelativistic calculation of the six lowest-order Feynman diagrams describing the reaction. A previously known missing strength for the reaction in the small neutron recoil region is confirmed with much smaller experimental uncertainty; the missing strength persists up to 150 MeV/c neutron recoil. The onset of a systematic section excess relative to the IA near neutron recoil momentum 200 MeV is explored in detail. (Author) (37 refs., 17 figs.)

  18. VizieR Online Data Catalog: Water maser emission toward post-AGB and PN (Gomez+, 2015)

    Science.gov (United States)

    Gomez, J. F.; Rizzo, J. R.; Suarez, O.; Palau, A.; Miranda, L. F.; Guerrero, M. A.; Ramos-Larios, G.; Torrelles, J. M.

    2015-09-01

    The observed sources are listed in Table 1. They comprise most of the sources in Ramos-Larios et al. (2009A&A...501.1207R). They are post-AGB stars and PN candidates with the IRAS color criteria of Suarez et al. (2006A&A...458..173S) and with signs of strong optical obscuration. We have also included some optically visible post-AGB stars from Suarez et al. (2006A&A...458..173S) that were not included in our previous water maser observations of Suarez et al. (2007A&A...467.1085S, 2009A&A...505..217S) or for which those observations had poor sensitivity. We observed the 616-523 transition of H2O (rest frequency = 22235.08MHz) using three different telescopes: the DSS-63 antenna (70m diameter) at the Madrid Deep Space Communications Complex (MDSCC) near Robledo de Chavela (Spain), the 64m antenna at the Parkes Observatory of the Australia Telescope National Facility (ATNF), and the 100m Robert C. Byrd Green Bank Telescope (GBT) of the National Radio Astronomy Observatory. The observed positions, rms noise per spectral channel, and observing dates are listed in Table 1. (3 data files).

  19. High-resolution measurements of the exited states (n,pn), (n,dn) C-12 cross sections

    Science.gov (United States)

    Pillon, M.; Angelone, M.; Belloni, F.; Geerts, W.; Loreti, S.; Milocco, A.; Plompen, A. J. M.

    2017-09-01

    Measurements of C12 cross sections for the excited states (n,p0) up to (n,p4) and (n,d0), (n,d1) have been carried out. The Van de Graaff neutron generator of the EC-JRC-IRMM laboratory has been used for these measurements. A very thin tritiated target (263 μg/cm2) was employed with deuteron beams energies impinging on the target in the range 2.5-4.0 MeV. Neutrons in the range 18.9-20.7 MeV were produced with an intrinsic energy spread of 0.2-0.25% FWHM. With such narrow neutron energy spread, using a high energy resolution device such as a single crystal diamond detector, several peaks from the outgoing charged particles produced by the (n,pn), (n,dn) and also (n,α0) reactions appear in the pulse height spectrum. The peaks can be identified using the reaction Q-values. The diamond detector used for these measurements has shown an intrinsic energy resolution lower than 0.9% FWHM. The analysis of the peaks has permitted to derive the partial carbon reaction cross sections for several excited states. The results are presented in this paper with the associated uncertainties and they are compared with different versions of TENDL compilation when these data are available (e.g. versions 2009, 2010, 2011 and 2015) and also with experimental results available in the EXFOR database.

  20. Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect.

    Science.gov (United States)

    Wang, Zhaona; Yu, Ruomeng; Wen, Xiaonan; Liu, Ying; Pan, Caofeng; Wu, Wenzhuo; Wang, Zhong Lin

    2014-12-23

    Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

  1. Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

    Science.gov (United States)

    Wu, Haiyan; Ma, Ziguang; Jiang, Yang; Wang, Lu; Yang, Haojun; Li, Yangfeng; Zuo, Peng; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Liu, Wuming; Chen, Hong

    2016-11-01

    A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported. According to the well established light-to-electricity conversion theory, quantum wells (QWs) cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels, owing to quantum confinement, and cannot form a photocurrent. We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent, indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs. We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions. Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340) and the Innovative Clean-energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

  2. Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

    Science.gov (United States)

    Von Roos, O.

    1981-01-01

    The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

  3. Synthesis of p-type nickel oxide nanosheets on n-type titanium dioxide nanorod arrays for p-n heterojunction-based UV photosensor

    Science.gov (United States)

    Yusoff, M. M.; Mamat, M. H.; Malek, M. F.; Abdullah, M. A. R.; Ismail, A. S.; Saidi, S. A.; Mohamed, R.; Suriani, A. B.; Khusaimi, Z.; Rusop, M.

    2018-05-01

    Titanium dioxide (TiO2) nanorod arrays (TNAs) were synthesized and deposited on fluorine tin oxide (FTO)-coated glass substrate using a novel and facile immersion method in a glass container. The synthesis and deposition of p-type nickel oxide (NiO) nanosheets (NS) on the n-type TNAs was investigated in the p-n heterojunction photodiode (PD) for the application of ultraviolet (UV) photosensor. The fabricated TNAs/NiO NS based UV photosensor exhibited a highly increased photocurrent of 4.3 µA under UV radiation (365 nm, 750 µW/cm2) at 1.0 V reverse bias. In this study, the fabricated TNAs/NiO NS p-n heterojunction based photodiode showed potential applications for UV photosensor based on the stable photo-generated current attained under UV radiation.

  4. Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

    Science.gov (United States)

    Chen, L. Y.; Loferski, J. J.

    1975-01-01

    Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

  5. Measurement of {sup 27}Al(γ,2pn){sup 24}Na Reaction Cross-sections with 55 -, 60 -, 65 - MeV Bremsstrahlung Employing MCNPX Simulation

    Energy Technology Data Exchange (ETDEWEB)

    Shin, S. G.; Kye, Y.; Cho, M. H. [POSTECH, Pohang (Korea, Republic of); Namkung, W. [Pohang Accelerator Laboratory, Pohang (Korea, Republic of); KIm, G. N.; Kim, K. [Kyungpook National Univ., Daegu (Korea, Republic of); Lee, M. W.; Kang, Y. R. [Dongnam Inst. Of Radiological and Medical Science, Busan (Korea, Republic of)

    2014-05-15

    Aluminum is used for monitoring the photon flux. The photon flux during the activation can be measured by substituting the {sup 27}Al(γ,2pn){sup 24}Na reaction cross-section induced by bremsstrahlung to reactivity equation. Therefore, if this cross-section is more accurate, gamma-ray flux can be measure more accurately. In this work, the {sup 27}Al(γ,2pn){sup 24}Na reaction cross-sections induced by 55 - 65 MeV bremsstrahlung were measured by activation technique at the Pohang Neutron Facility (PNF) which has produced the nuclear data using Time-Of-Flight method and activation technique. In order to get the photon flux, MCNPX was used. These measurement values were compared with the data of Meyer et al (1968)

  6. Characterization of GaN P-N Junction Grown on Si (111) Substrate by Plasma-assisted Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    Rosfariza Radzali; Rosfariza Radzali; Mohd Anas Ahmad; Zainuriah Hassan; Norzaini Zainal; Kwong, Y.F.; Woei, C.C.; Mohd Zaki Mohd Yusoff; Mohd Zaki Mohd Yusoff

    2011-01-01

    In this report, the growth of GaN pn junction on Si (111) substrate by plasma assisted molecular beam epitaxy (PAMBE) is presented. Doping of GaN p-n junction has been carried out using Si and Mg as n-type dopant and p-type dopants, respectively. The sample had been characterized by PL, Raman spectroscopy, HR-XRD and SEM. PL spectrum showed strong band edge emission of GaN at ∼364 nm, indicating good quality of the sample. The image of SEM cross section of the sample showed sharp interfaces. The presence of peak ∼657 cm -1 in Raman measurement exhibited successful doping of Mg in the sample. (author)

  7. Investigation on electrical properties of diffusive p-n junctions in InP and solid solutions of InAssub(x)Psub(1-x)

    International Nuclear Information System (INIS)

    Agaev, Ya.; Atabaev, Kh.; Gazakov, O.

    1977-01-01

    Diodes from InP and from solid solutions of InAssub(0.6)Psub(0.4), InAssub(0.5)Psub(0.5) were obtained by the diffusion of Zn. The voltage-current characteristic was measured at a direct current in the temperature range from 80 to 300 K. The rectification factor is 10 4 and 2.5 -3.0 x10 2 , respectively, for InP and InAssub(x)Psub(1-x) p-n junctions. The lifetime, the series resistance and resistance of the p-n junction at a zero bias were calculated from an analysis of the voltage-current characteristics

  8. Selective Hydrogen Generation from Formic Acid with Well-Defined Complexes of Ruthenium and Phosphorus-Nitrogen PN3-Pincer Ligand

    KAUST Repository

    Pan, Yupeng

    2016-04-22

    An unsymmetrically protonated PN3-pincer complex in which ruthenium is coordinated by one nitrogen and two phosphorus atoms was employed for the selective generation of hydrogen from formic acid. Mechanistic studies suggest that the imine arm participates in the formic acid activation/deprotonation step. A long life time of 150 h with a turnover number over 1 million was achieved. Grabbing hold: A PN3-pincer complex was employed for the selective hydrogen generation from formic acid. Mechanistic studies suggest the imine arm participates in the formic acid activation/deprotonation step. A long life time of 150 h with a turnover number over 1 million was achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Energy dependence of the ratio of isovector effective interaction strengths |JστJτ| from 0° (p,n) cross sections

    Science.gov (United States)

    Taddeucci, T. N.; Rapaport, J.; Bainum, D. E.; Goodman, C. D.; Foster, C. C.; Gaarde, C.; Larsen, J.; Goulding, C. A.; Horen, D. J.; Masterson, T.; Sugarbaker, E.

    1982-02-01

    Information concerning the ratio of the isovector effective interaction strengths |JστJτ| may be obtained from the ratio of (p,n) Gamow-Teller and isobaric analog state 0° differential cross sections. We have examined 0° (p,n) data for the energy range 5-200 MeV and find that for energies larger than 50 MeV and for targets with A=7-42 the product of the interaction-strength and distortion-factor ratios |JστJτ|(NστNτ)12 appears to be mass independent and linear as a function of bombarding energy. NUCLEAR REACTIONS 7Li, 13, 14C, 26Mg, 37Cl, 41Ca(p,n), measured σ(θ=0°), GT, IAS transitions, Ep=60-200 MeV. Deduced energy dependence, interaction strength ratio |JστJτ|.

  10. Comparisons of fission track age-determination and radioactivation analysis among radiation fields. Characteristic values for pneumatic tube, JRR-3M PN2

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Tatsuro [Kagoshima Univ. (Japan). Faculty of Education; Tomura, Kenji

    1996-01-01

    It is necessary for Fission track age determination and radioactivation analysis to define the energy spectrum of a reactor neutron as the basis for calculating the nuclear reaction rate. This study was made aiming to define the spectrum for PN2 pneumatic tube of No. 3 plant of Japan Atomic Energy Research Institute (JAERI). Characteristics such as conventional flux, cross reaction, neutron temperature and integral fast flux were examined for 3 facilities; JRR-2, JRR-4 and JRR-3M. And the neutron spectrum for each facility was estimated based on the assumptions; Maxwell distribution for thermal neutrons, 1/E for intermediate neutrons and Watt`s formula for fast neutrons. The present results showed that the spectrum for JRR-3M, PN2 was discontinuous in the range from the intermediate to the fast neutron, whereas those for other facilities were found considerably improved. (M.N.)

  11. TINJAUAN YURIDIS TERHADAP TINDAK PIDANA NARKOTIKA YANG DILAKUKAN OLEH OKNUM KEPOLISIAN (Studi Kasus Putusan No. 1088/PID.B/2013/PN.MKS)

    OpenAIRE

    WIBOWO, AJENG KURNIA WULANDARI

    2016-01-01

    2016 AJENG KURNIA WULANDARI WIBOWO (B111 12 170), Tinjauan Yuridis Terhadap Tindak Pidana Narkotika Yang Dilakukan Oleh Aparat Kepolisian (Studi Putusan Pengadilan No. 1088/PID.B/2013/PN.MKS). Dibawah bimbingan Bapak Prof. Dr. H. Slamet Sampurno, S.H., M.H., DFM. selaku pembimbing I dan Bapak Dr. Abd. Azis, S.H., M.H. selaku pembimbing II. Penelitian ini bertujuan untuk mengetahui penerapan hukum pidana terhadap tindak pidana narkotika yang dilakukan oleh aparat kepolisi...

  12. Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Qin, Ruifeng [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Cao, Hongtao; Liang, Lingyan, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn; Xie, Yufang; Zhuge, Fei; Zhang, Hongliang; Gao, Junhua; Javaid, Kashif [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Liu, Caichi; Sun, Weizhong, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China)

    2016-04-04

    ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and from 0.37 to 2.07 cm{sup 2} V{sup −1} s{sup −1}, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 10{sup 3}. The achievement of this ZnSnN{sub 2}-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN{sub 2} material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.

  13. The study of production processes of nucleons, γ-quanta and neutral strange particles in pp- and pn-interactions at 300 GeV

    International Nuclear Information System (INIS)

    Turumov, Eh.

    2001-03-01

    Processes of nucleons, γ-quanta and neutral strange particles in pp- and pn-interactions at 300 GeV in 4π-geometry were studied by the use of neon-hydrogen bubble chamber. The average multiplicity of γ-quanta, fast neutrons, K 0 s -mesons and λ 0 ( λ 0 bar)-hyperons were defined and their energy spectra were analyzed. Experimental results were compared with Lund and dual parton model predictions. (author)

  14. Effect of secondary rescattering in the reaction D(. pi. /sup -/,. pi. /sup -/p)n at high energies. [Secondary rescattering, angular distributions

    Energy Technology Data Exchange (ETDEWEB)

    Kolybasov, V M; Ksenzov, V G [Gosudarstvennyj Komitet po Ispol' zovaniyu Atomnoj Ehnergii SSSR, Moscow. Inst. Teoreticheskoj i Ehksperimental' noj Fiziki

    1975-01-01

    The D(..pi../sup -/,..pi../sup -/p)n reaction is theoretically treated. Besides simple quasi-elastic knocking out, account was taken of diagrams of secondary rescattering of reaction products. Momentum and neutron polar angle distributions, as well as the Treyman-Young angular distribution, are compared with experimental data at 1 GeV. The behaviour of various distributions of individual diagrams is studied, and their response to the mechanism of the reaction is investigated with a methodological purpose.

  15. Theoretical analysis of nuclear reactors (Phase II), I-V, Part V, Determining the fine neutron flux distribution by Pn method; Razrada metoda teorijske analize nuklearnih reaktora (II faza) I-V, V Deo, Odredjivanje fine raspodele fluksa Pn metodom

    Energy Technology Data Exchange (ETDEWEB)

    Pop-Jordanov, J [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

    1962-10-15

    Expression for spherical harmonic moments were applied. They were obtained by spherical harmonics expansion of monoenergetic transport equation. This report presents the procedure for calculating the neutron flux distribution in the nine-zone reactor cell of the RA reactor in Vinca. The procedure was modelled for digital computer ZUSE Z-23 by expansion of the diagram of the automated P{sub 3} code, which is adequate for P{sub n} code with minor changes. The needed subroutines were developed. The most important ones were those for modified first and second order Bessel functions of n-th order. Computer Z-23 was operating only 15 hours during three months, and thus only the subroutines for modified Bessel functions could be tested and the obtained results were excellent. For the mentioned reason the neutron flux distribution will be calculated in the forthcoming period. Koriscen je izraz za svernoharmonicne momente koji se dobija razvijanjem monoenergetske transportne jednacine u sverne harmonike. Dat je postupak za odredjivanje raspodele neutronskog fluksa u devet medijalnoj celiji reaktora RA u Vinci. Gornji postupak je logicki organizovan na digitalnoj masini ZUSE Z-23 razvijanjem tekuceg dijagrama automatskog P{sub 3} koda, koji sa malim izmenama odgovara Pn kodu. Razvijene su potrebne osnovne subrutine, medju kojima su najznacajnije one za modificirane Beselove funkcije prve i druge vrste n - tog reda. Masina ZUSE Z-23 bila je u radu svega 15 zasova u toku tri meseca, te sam stigao da testiram samo subrutine za modificirane Beselove funkcije koje su dale odlicne rezultate. Iz ovoga razloga nije se mogla dobiti trazena raspodela fluksa. To ce biti ucinjeno u narednom periodu posto cemo moci koristiti masinu Z-23 (author)

  16. Construction of fiber-shaped silver oxide/tantalum nitride p-n heterojunctions as highly efficient visible-light-driven photocatalysts.

    Science.gov (United States)

    Li, Shijie; Hu, Shiwei; Xu, Kaibing; Jiang, Wei; Liu, Yu; Leng, Zhe; Liu, Jianshe

    2017-10-15

    Constructing novel and efficient p-n heterojunction photocatalysts has stimulated great interest. Herein, we report the design and synthesis of fiber-shaped Ag 2 O/Ta 3 N 5 p-n heterojunctions as a kind of efficient photocatalysts. Ta 3 N 5 nanofibers were prepared by an electrospinning-calcination-nitridation method, and then the in-situ anchoring of Ag 2 O on their surfaces was realized by a facile deposition method. The resulting Ag 2 O/Ta 3 N 5 heterojunctions were comprised of porous Ta 3 N 5 nanofibers (diameter: ∼150nm) and Ag 2 O nanoparticles (size: ∼12nm). The photocatalytic activity of these heterojunctions were studied by decomposing rhodamine B (RhB) dye and tetracycline (TC) antibiotic under visible light (λ>400nm). In all the samples, the heterojunction with Ag 2 O/Ta 3 N 5 molar ratio of 0.2/1 displays the best activity. It is found that a synergistic effect contributes to the effective suppression of charges recombination between Ta 3 N 5 and Ag 2 O, leading to an enhanced photocatalytic activity with good stability. The photogenerated holes (h + ) and superoxide radicals (O 2 - ) play dominant roles in the photocatalytic process. These p-n heterojunctions will have great potential for environmental remediation because of the facile preparation process and exceptional photocatalytic activity. Copyright © 2017 Elsevier Inc. All rights reserved.

  17. On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

    International Nuclear Information System (INIS)

    Wang, Yongjin; Zhu, Guixia; Gao, Xumin; Yang, Yongchao; Yuan, Jialei; Shi, Zheng; Zhu, Hongbo; Cai, Wei

    2016-01-01

    We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

  18. Repercussion of Solid state vs. Liquid state synthesized p-n heterojunction RGO-copper phosphate on proton reduction potential in water.

    Science.gov (United States)

    Samal, Alaka; Das, Dipti P; Madras, Giridhar

    2018-02-13

    The same copper phosphate catalysts were synthesized by obtaining the methods involving solid state as well as liquid state reactions in this work. And then the optimised p-n hybrid junction photocatalysts have been synthesized following the same solid/liquid reaction pathways. The synthesized copper phosphate photocatalyst has unique rod, flower, caramel-treat-like morphology. The Mott-Schottky behavior is in accordance with the expected behavior of n-type semiconductor and the carrier concentration was calculated using the M-S analysis for the photocatalyst. And for the p-n hybrid junction of 8RGO-Cu 3 (PO 4 ) 2 -PA (PA abbreviated for photoassisted synthesis method), 8RGO-Cu 3 (PO 4 ) 2 -EG(EG abbreviated for Ethylene Glycol based synthesis method), 8RGO-Cu 3 (PO 4 ) 2 -PEG (PEG abbreviated for Poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol based synthesis method)the amount of H 2 synthesized was 7500, 6500 and 4500 µmol/h/g, respectively. The excited electrons resulting after the irradiation of visible light on the CB of p-type reduced graphene oxide (RGO) migrate easily to n-type Cu 3 (PO 4 ) 2 via. the p-n junction interfaces and hence great charge carrier separation was achieved.

  19. Effect of high pN2 and high pD2 on NH3 production, H2 evolution, and HD formation by nitrogenases

    International Nuclear Information System (INIS)

    Jensen, B.B.; Burris, R.H.

    1985-01-01

    We have investigated the effect of the partial pressure of N2 and D2 on HD formation, H2 evolution, and NH3 production by nitrogenase from Klebsiella pneumoniae and Clostridium pasteurianum. By using pressures up to 4 atm, we have been able to extend the concentration range of N2 and D2 in our investigations beyond that used in previous studies. The pN2 dependence of HD formation with constant pD2 ideally shows no HD formation under zero pN2, reaches a peak which depends on the pD2, and then decreases to zero at very high pN2. K. pneumoniae and C. pasteurianum nitrogenases differ in their Ki(D2) for nitrogen fixation. C. pasteurianum nitrogenase had the lower activity for formation of HD. With K. pneumoniae nitrogenase, D2 enhanced H2 evolution from 31% of the electron flux partitioned to H2 in the absence of D2 to 51% of the electron flux partitioned to H2 at 400 kPa of D2. With C. pasteurianum nitrogenase, the equivalent values were 33% and 48% of the total electron flux. Our results support previou findings on the mechanism for nitrogenase-catalyzed reductions proposed by W. W. Cleland

  20. Li14P2O3N6 and Li7PN4: Computational study of two nitrogen rich crystalline LiPON electrolyte materials

    Science.gov (United States)

    Al-Qawasmeh, Ahmad; Holzwarth, N. A. W.

    2017-10-01

    Two lithium oxonitridophosphate materials are computationally examined and found to be promising solid electrolytes for possible use in all solid-state batteries having metallic Li anodes - Li14P2O3N6 and Li7PN4. The first principles simulations are in good agreement with the structural analyses reported in the literature for these materials and the computed total energies indicate that both materials are stable with respect to decomposition into binary and ternary products. The computational results suggest that both materials are likely to form metastable interfaces with Li metal. The simulations also find both materials to have Li ion migration activation energies comparable or smaller than those of related Li ion electrolyte materials. Specifically, for Li7PN4, the experimentally measured activation energy can be explained by the migration of a Li ion vacancy stabilized by a small number of O2- ions substituting for N3- ions. For Li14P2O3N6, the activation energy for Li ion migration has not yet been experimentally measured, but simulations predict it to be smaller than that measured for Li7PN4.

  1. Reducing chemotherapy use in clinically high-risk, genomically low-risk pN0 and pN1 early breast cancer patients: five-year data from the prospective, randomised phase 3 West German Study Group (WSG) PlanB trial.

    Science.gov (United States)

    Nitz, Ulrike; Gluz, Oleg; Christgen, Matthias; Kates, Ronald E; Clemens, Michael; Malter, Wolfram; Nuding, Benno; Aktas, Bahriye; Kuemmel, Sherko; Reimer, Toralf; Stefek, Andrea; Lorenz-Salehi, Fatemeh; Krabisch, Petra; Just, Marianne; Augustin, Doris; Liedtke, Cornelia; Chao, Calvin; Shak, Steven; Wuerstlein, Rachel; Kreipe, Hans H; Harbeck, Nadia

    2017-10-01

    The prospective phase 3 PlanB trial used the Oncotype DX ® Recurrence Score ® (RS) to define a genomically low-risk subset of clinically high-risk pN0-1 early breast cancer (EBC) patients for treatment with adjuvant endocrine therapy (ET) alone. Here, we report five-year data evaluating the prognostic value of RS, Ki-67, and other traditional clinicopathological parameters. A central tumour bank was prospectively established within PlanB. Following an early amendment, hormone receptor (HR)+ , pN0-1 RS ≤ 11 patients were recommended to omit chemotherapy. Patients with RS ≥ 12, pN2-3, or HR-negative/HER2-negative disease were randomised to anthracycline-containing or anthracycline-free chemotherapy. Primary endpoint: disease-free survival (DFS). PlanB Clinicaltrials.gov identifier: NCT01049425. From 2009 to 2011, PlanB enrolled 3198 patients (central tumour bank, n = 3073) with the median age of 56 years, 41.1% pN+, and 32.5% grade 3 EBC. Chemotherapy was omitted in 348/404 (86.1%) eligible RS ≤ 11 patients. After 55 months of median follow-up, five-year DFS in ET-treated RS ≤ 11 patients was 94% (in both pN0 and pN1) versus 94% (RS 12-25) and 84% (RS > 25) in chemotherapy-treated patients (p 2 cm, and RS, but not IHC4 or Ki-67 were independent adverse factors. If RS was excluded, IHC4 or both Ki-67 and PR entered the model. The impact of RS was particularly pronounced in patients with intermediate Ki-67 (>10%, risk, genomically low-risk (RS ≤ 11) pN0-1 patients without adjuvant chemotherapy support using RS with standardised pathology for treatment decisions in HR+ HER2-negative EBC. Ki-67 has the potential to support patient selection for genomic testing.

  2. Technical advances in neutron polarimetry and studies of the (p,n) reaction in /sup 13/C

    Energy Technology Data Exchange (ETDEWEB)

    Videla, N G

    1985-01-01

    The asymmetry in the /sup 4/He(p,n vector)/sup 4/He reaction has been measured at three different incident neutron energies: 19.40; 22.85 and 27.31 MeV, and 120/sup 0/ from forward direction. Values of the asymmetry have been used to calculate the polarization of fast neutrons produced in the /sup 13/C(p,n vector)/sup 13/N. The /sup 13/C(p,n vector)/sup 13/N reaction was studied as part of a program being undertaken at the University of Manitoba Cyclotron Laboratory to study (p,n) reactions linking isobaric analog states of mirror nuclei in the energy range of 22 to 50 MeV. The study involves a comparison of the proton analyzing power A(theta), in the reaction /sup 13/C(vector p,n)/sup 13/N to the neutron polarization in the inverse reaction /sup 13/C(p,n vector)/sup 13/N. The importance of the comparison between these two observables is based in Conzett's theorem for time reversed reactions, the theorem states that the proton analyzing power in the reaction /sup 13/C(vector p,n)/sup 13/N is equal to the neutron polarization in the reaction /sup 13/C(p,n vector)/sup 13/N provided the reaction proceeds between members of an isospin doublet and when charge symmetry and time reversal invariance hold exactly. However, isospin symmetry is broken by the Coulomb interaction. So comparison of these two observables should yield information of the breaking of isospin by the Coulomb force.

  3. Thrombotic safety of prothrombin complex concentrate (Beriplex P/N) for dabigatran reversal in a rabbit model.

    Science.gov (United States)

    Herzog, Eva; Kaspereit, Franz J; Krege, Wilfried; Doerr, Baerbel; van Ryn, Joanne; Dickneite, Gerhard; Pragst, Ingo

    2014-09-01

    In vivo animal data have shown prothrombin complex concentrate (PCC) to be effective in preventing bleeding induced by excessive plasma levels of the direct thrombin inhibitor dabigatran. This animal model study was designed to determine the risk of thrombosis associated with administration of a PCC (Beriplex P/N) to reverse dabigatran-induced bleeding. Anesthetized rabbits were treated with initial 0, 75, 200 or 450 μg kg(-1) dabigatran boluses followed by continuous infusions to maintain elevated plasma dabigatran levels. At 15 min after the start of dabigatran administration, PCC doses of 0, 50 or 300 IU kg(-1) were administered. Thereafter, coagulation in an arteriovenous (AV) shunt was evaluated and histopathologic examination for thrombotic changes performed. Venous thrombosis was also assessed in a modified Wessler model. At the suprapharmacologic dose of 300 IU kg(-1), PCC increased thrombus weight during AV shunting, but this effect could be prevented by dabigatran at all tested doses. AV shunt occlusion after PCC administration was delayed by 75 μg kg(-1) dabigatran and abolished by progressively higher dabigatran doses. High-dose treatment with 300 IU kg(-1) PCC resulted in histologically evident low-grade pulmonary thrombi; however, that effect could be blocked by dabigatran in a dose-dependent manner (p=0.034). In rabbits treated with high-dose PCC, dabigatran inhibited thrombus formation during venous stasis. PCC effectively reversed dabigatran-induced bleeding. In this animal study, thrombosis after PCC administration could be prevented in the presence of dabigatran. PCC reversed dabigatran-induced excessive bleeding while retaining protective anticoagulatory activity of dabigatran. Copyright © 2014. Published by Elsevier Ltd.

  4. High-resolution measurements of the exited states (n,pn, (n,dn C-12 cross sections

    Directory of Open Access Journals (Sweden)

    Pillon M.

    2017-01-01

    Full Text Available Measurements of C12 cross sections for the excited states (n,p0 up to (n,p4 and (n,d0, (n,d1 have been carried out. The Van de Graaff neutron generator of the EC-JRC-IRMM laboratory has been used for these measurements. A very thin tritiated target (263 μg/cm2 was employed with deuteron beams energies impinging on the target in the range 2.5–4.0 MeV. Neutrons in the range 18.9–20.7 MeV were produced with an intrinsic energy spread of 0.2–0.25% FWHM. With such narrow neutron energy spread, using a high energy resolution device such as a single crystal diamond detector, several peaks from the outgoing charged particles produced by the (n,pn, (n,dn and also (n,α0 reactions appear in the pulse height spectrum. The peaks can be identified using the reaction Q-values. The diamond detector used for these measurements has shown an intrinsic energy resolution lower than 0.9% FWHM. The analysis of the peaks has permitted to derive the partial carbon reaction cross sections for several excited states. The results are presented in this paper with the associated uncertainties and they are compared with different versions of TENDL compilation when these data are available (e.g. versions 2009, 2010, 2011 and 2015 and also with experimental results available in the EXFOR database.

  5. Development of authentication system for the fast critical assembly (FCA) portal monitor (P/M) and penetration monitor (PN/M) systems of JAERI

    International Nuclear Information System (INIS)

    Ogawa, Hironobu; Mukaiyama, Takehiko

    1999-05-01

    The advanced comprehensive containment and surveillance system for the Fast Critical Assembly facility (FCA) of the Japan Atomic Energy Research Institute (JAERI) consists of a Portal monitor (P/M) and a Penetration Monitor (PN/M) systems. The development of these systems was completed in 1988 for alleviating the burdens of manpower and radiation problems in the frequent NDA inspections. After the completion of the field trial test (Phase III), in 1990, the International Atomic Energy Agency (IAEA) accepted the system on condition that an independent IAEA authentication equipment would be provided. The development of the authentication measures was carried out jointly by both the Japan Support Programme for Agency Safeguards (JASPAS) and the U.S. Program of Technical Assistance to IAEA Safeguards (POTAS), and also under the research agreement for the safeguards research and development between JAERI and the US Department of Energy (USDOE). The concept and design requirements of the authentication system were developed by IAEA, but the design and development of the authentication equipment were jointly funded both by JASPAS and POTAS, and also the fund of JAERI was provided for the Sandia National Laboratories (SNL) through USDOE. SNL developed and constructed the authentication system in two phase as Phase I and Phase II. JAERI financed the development of the Phase I and Phase II hardware and software, and the installation of the authentication equipment at the FCA facility, and also carried out the modification of the circuitry and devices for both the P/M and the PN/M systems as well as the reconstruction of the PN/M Junction Unit for compatibility with the implementation of the authentication measures. After the completion of consecutive field trial test of the P/M, the PN/M and the authentication system, IAEA accepted the entire system as an effective and efficient routine inspection measures in 1996. This report describes the modification and reconstruction of

  6. [Current therapeutic indications of thalidomide and lenalidomide].

    Science.gov (United States)

    Ordi-Ros, Josep; Cosiglio, Francisco Javier

    2014-04-22

    Thalidomide is a synthetic glutamic acid derivative first introduced in 1956 in Germany as an over the counter medications. It was thought to be one of the safest sedatives ever produced as it was effective in small doses, was not addictive, and did not have acute side-effects such as motor impairment, but was quickly removed from market after it was linked to cases of severe birth defects. The Food and Drug Administration approved use in the treatment of erythema nodosum leprosum. Further, it was shown its effectiveness in unresponsive dermatological conditions such as actinic prurigo, adult Langerhans cell hystiocytosis, aphthous stomatitis, Behçet syndrome, graft-versus-host disease, cutaneous sarcoidosis, erythema multiforme, Jessner-Kanof lymphocytic infiltration of the skin, Kaposi sarcoma, lichen planus, lupus erythematosus, melanoma, prurigo nodularis, pyoderma gangrenosum and others. In May 2006, it was approved for the treating multiple myeloma. New thalidomide analogues have been developed but lack clinical experience. This paper is a review of the history, pharmacology, mechanism of action, clinical applications and side effects of thalidomide and its analogues. Copyright © 2013 Elsevier España, S.L. All rights reserved.

  7. MARC/PN

    International Nuclear Information System (INIS)

    Fletcher, J.K.

    1988-07-01

    In Part 1 of the report a description of the basic method will be found followed by details of the finite difference and finite element techniques employed. To facilitate explanation of the anisotropic scatter treatment an alternative derivation of the equations based on the generalized least squares approach leads to details of the relevant algorithm. Part 1 continues with the derivation of a general perturbation formula then, because they form the basis of the method, a summary of the properties of spherical harmonics and concludes with appendices containing FORTRAN routines illustrating some of the novel techniques used in the code. Part 2 comprises a programmer's guide. (author)

  8. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  9. Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

    Science.gov (United States)

    Kizilyalli, I. C.; Aktas, O.

    2015-12-01

    There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction

  10. Fabrication of Cubic p-n Heterojunction-Like NiO/In2O3 Composite Microparticles and Their Enhanced Gas Sensing Characteristics

    Directory of Open Access Journals (Sweden)

    Hou Xuemei

    2016-01-01

    Full Text Available Oxide semiconductor In2O3 has been extensively used as a gas sensing material for the detection of various toxic gases. However, the pure In2O3 sensor is always suffering from its low sensitivity. In the present study, a dramatic enhancement of sensing characteristic of cubic In2O3 was achieved by deliberately fabricating p-n heterojunction-like NiO/In2O3 composite microparticles as sensor material. The NiO-decorated In2O3 p-n heterojunction-like sensors were prepared through the hydrothermal transformation method. The as-synthesized products were characterized using SEM-EDS, XRD, and FT-IR, and their gas sensing characteristics were investigated by detecting the gas response. The experimental results showed that the response of the NiO/In2O3 sensors to 600 ppm methanal was 85.5 at 260°C, revealing a dramatic enhancement over the pure In2O3 cubes (21.1 at 260°C. Further, a selective detection of methanol with inappreciable cross-response to other gases, like formaldehyde, benzene, methylbenzene, trichloromethane, ethanol, and ammonia, was achieved. The cause for the enhanced gas response was discussed in detailed. In view of the facile method of fabrication of such composite sensors and the superior gas response performance of samples, the cubic p-n heterojunction-like NiO/In2O3 sensors present to be a promising and viable strategy for the detection of indoor air pollution.

  11. In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode

    Energy Technology Data Exchange (ETDEWEB)

    Phuan, Yi Wen, E-mail: phuan.yi.wen@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Ibrahim, Elyas, E-mail: meibr2@student.monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Chong, Meng Nan, E-mail: Chong.Meng.Nan@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Zhu, Tao, E-mail: zhu.tao@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Lee, Byeong-Kyu, E-mail: bklee@ulsan.ac.kr [Department of Civil and Environmental Engineering, University of Ulsan, Nam-gu, Daehakro 93, Ulsan 680-749 (Korea, Republic of); Ocon, Joey D., E-mail: jdocon@up.edu.ph [Laboratory of Electrochemical Engineering (LEE), Department of Chemical Engineering, University of the Philippines Diliman, Quezon City 1101 (Philippines); Chan, Eng Seng, E-mail: chan.eng.seng@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia)

    2017-01-15

    Highlights: • NiO-hematite p-n junction photoanodes were fabricated via an in situ Ni-doping. • The fundamental mechanism of Ni{sup 2+} ions involved was elucidated. • The optimum Ni dopant was 25 M% for the highest photocurrent density. • It exhibited an excellent photoelectrochemical performance of 7-folds enhancement. - Abstract: Nanostructured nickel oxide-hematite (NiO/α-Fe{sub 2}O{sub 3}) p-n junction photoanodes synthesized from in situ doping of nickel (Ni) during cathodic electrodeposition of hematite were successfully demonstrated. A postulation model was proposed to explain the fundamental mechanism of Ni{sup 2+} ions involved, and the eventual formation of NiO on the subsurface region of hematite that enhanced the potential photoelectrochemical water oxidation process. Through this study, it was found that the measured photocurrent densities of the Ni-doped hematite photoanodes were highly dependent on the concentrations of Ni dopant used. The optimum Ni dopant at 25 M% demonstrated an excellent photoelectrochemical performance of 7-folds enhancement as compared to bare hematite photoanode. This was attributed to the increased electron donor density through the p-n junction and thus lowering the energetic barrier for water oxidation activity at the optimum Ni dopant concentration. Concurrently, the in situ Ni-doping of hematite has also lowered the photogenerated charge carrier transfer resistance as measured using the electrochemical impedance spectroscopy. It is expected that the fundamental understanding gained through this study is helpful for the rational design and construction of highly efficient photoanodes for application in photoelectrochemical process.

  12. In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode

    International Nuclear Information System (INIS)

    Phuan, Yi Wen; Ibrahim, Elyas; Chong, Meng Nan; Zhu, Tao; Lee, Byeong-Kyu; Ocon, Joey D.; Chan, Eng Seng

    2017-01-01

    Highlights: • NiO-hematite p-n junction photoanodes were fabricated via an in situ Ni-doping. • The fundamental mechanism of Ni"2"+ ions involved was elucidated. • The optimum Ni dopant was 25 M% for the highest photocurrent density. • It exhibited an excellent photoelectrochemical performance of 7-folds enhancement. - Abstract: Nanostructured nickel oxide-hematite (NiO/α-Fe_2O_3) p-n junction photoanodes synthesized from in situ doping of nickel (Ni) during cathodic electrodeposition of hematite were successfully demonstrated. A postulation model was proposed to explain the fundamental mechanism of Ni"2"+ ions involved, and the eventual formation of NiO on the subsurface region of hematite that enhanced the potential photoelectrochemical water oxidation process. Through this study, it was found that the measured photocurrent densities of the Ni-doped hematite photoanodes were highly dependent on the concentrations of Ni dopant used. The optimum Ni dopant at 25 M% demonstrated an excellent photoelectrochemical performance of 7-folds enhancement as compared to bare hematite photoanode. This was attributed to the increased electron donor density through the p-n junction and thus lowering the energetic barrier for water oxidation activity at the optimum Ni dopant concentration. Concurrently, the in situ Ni-doping of hematite has also lowered the photogenerated charge carrier transfer resistance as measured using the electrochemical impedance spectroscopy. It is expected that the fundamental understanding gained through this study is helpful for the rational design and construction of highly efficient photoanodes for application in photoelectrochemical process.

  13. Polarization measurements in the pp → pnπ+ and pp → ppπ0 reactions at 517 and 580 MeV

    International Nuclear Information System (INIS)

    Bach, P.; Cantale, G.; Degli-Agosti, S.; Demierre, P.; Favier, B.; Heer, E.; Hess, R.; Lechanoine-Leluc, C.; Leo, W.; Onel, Y.; and others.

    1989-01-01

    The transverse polarization of the outgoing proton in the pp → pnπ + and pp → ppπ 0 reactions was investigated for the first time. The measurements were performed at SIN (now PSI) at 517 and 580 MeV on the pM1 polarized proton beam line with an average beam polarization higher than 82%, using a liquid hydrogen target. A carbon polarimeter spin-analyzed the scattered proton, 3 MWPC's tracked the recoil charged particle and a 3.84 m 2 neutron detector identified the neutral particle and measured TOF's

  14. Investigation of the p+N → [Σ0K+]+N reaction at the proton energy Ep = 70 GeV

    International Nuclear Information System (INIS)

    Anon.

    1994-01-01

    The p+N → [Σ 0 K + ]+N reaction was studied in experiments using the SPHINX detector placed in the 70-GeV proton beam of the IHEP accelerator. In the effective mass spectrum of the M(Σ 0 K + ) system produced in the coherent diffractive transition, a clear peak with mass M = 1999 ± 7 MeV and width Γ = 91 ± 17 MeV was observed in addition to the near-threshold structure with mass M ≅ 1800 MeV. 7 refs., 3 figs

  15. A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

    Science.gov (United States)

    Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

    1980-01-01

    Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

  16. Evidence of the correlation between a strong 4d-As/2p-N orbitals coupling and the bowing effect in GaAsN

    International Nuclear Information System (INIS)

    Mehnane, N.; Badi, F.; Abid, H.; Reda Aced, M.; Sekkal, N.

    2008-05-01

    By means of a simple physical argumentation, we give the proof that the giant bowing observed in GaAsN is correlated to a strong interaction between 4d-As and 2p-N orbitals. The calculations were carried out within the first principles full potential linear muffin-tin orbitals method (FPLMTO) method in its plane wave approximation (PLW) which enables an accurate treatment of the interstitial regions. The choice of this method ensures our work to be free from adjustable parameters and enables us to perform a microscopic study. (author)

  17. Model of a tunneling current in a p-n junction based on armchair graphene nanoribbons - an Airy function approach and a transfer matrix method

    International Nuclear Information System (INIS)

    Suhendi, Endi; Syariati, Rifki; Noor, Fatimah A.; Khairurrijal; Kurniasih, Neny

    2014-01-01

    We modeled a tunneling current in a p-n junction based on armchair graphene nanoribbons (AGNRs) by using an Airy function approach (AFA) and a transfer matrix method (TMM). We used β-type AGNRs, in which its band gap energy and electron effective mass depends on its width as given by the extended Huckel theory. It was shown that the tunneling currents evaluated by employing the AFA are the same as those obtained under the TMM. Moreover, the calculated tunneling current was proportional to the voltage bias and inversely with temperature

  18. High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p+-n silicon junction

    International Nuclear Information System (INIS)

    Smaali, K.; Faure, J.; El Hdiy, A.; Troyon, M.

    2008-01-01

    High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p + -n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and high-resolution EBIC image simultaneously obtained. It is shown that the EBIC imaging capabilities of this combined instrument allows the study of p-n junctions with a resolution of about 20 nm

  19. Detection of sites of infection in mice using 99mTc-labeled PN2S-PEG conjugated to UBI and 99mTc-UBI: a comparative biodistribution study

    International Nuclear Information System (INIS)

    Melendez-Alafort, Laura; Nadali, Anna; Pasut, Gianfranco; Zangoni, Elena; De Caro, Raffaele; Cariolato, Luca; Giron, Maria Cecilia; Castagliuolo, Ignazio; Veronese, Francesco M.; Mazzi, Ulderico

    2009-01-01

    The antimicrobial peptide ubiquicidin (UBI) directly labeled with technetium-99m ( 99m Tc) has recently been shown to be specifically taken up at sites of infection; however, its chemical structure is not well defined. To address this problem, the aim of the present study was to label UBI using poly(ethyleneglycol)-N-(N-(3-diphenylphosphinopropionyl)glycyl) -S-tritylcysteine ligand (PEG-PN 2 S) in order to compare its ability to detect infection sites with that of 99m Tc-UBI. Methods: The PN 2 S-PEG-UBI conjugate was prepared and labeled with 99m Tc, and its radiochemical purity was subsequently assessed. The stability of the conjugate to cysteine challenge and dilution with both saline solution and phosphate buffer was determined and serum stability and protein binding were also assessed. In vivo studies were carried out in healthy mice to study the biodistribution of 99m Tc-PN 2 S-PEG-UBI and its precursor 99m Tc-PN 2 S-PEG and in infected mice to compare the uptakes of 99m Tc-UBI and 99m Tc-PN 2 S-PEG-UBI at the site of infection using scintigraphic imaging and ex vivo tissue counting. Results: 99m Tc-PN 2 S-PEG-UBI was obtained with high radiochemical purity (98±1%) and high stability. The amphiphilic nature of the conjugate leads to a tendency to form micellar aggregates that explain the high protein binding values obtained. Biodistribution studies in mice showed low renal clearance followed by a predominant reticuloendothelial system clearance that limits its application in the abdominal area. Statistical analysis revealed no significant difference between 99m Tc-UBI and 99m Tc-PN 2 S-PEG-UBI uptake in infected mouse thigh, and the site of infection was clearly visualized using scintigraphic imaging. Conclusions: 99m Tc-PN 2 S-PEG-UBI proved to be as effective as 99m Tc-UBI in detecting sites of infection; however, the well-defined chemical structure of 99m Tc-PN 2 S-PEG-UBI makes it a better candidate for clinical imaging of infection

  20. Detection of sites of infection in mice using {sup 99m}Tc-labeled PN{sub 2}S-PEG conjugated to UBI and {sup 99m}Tc-UBI: a comparative biodistribution study

    Energy Technology Data Exchange (ETDEWEB)

    Melendez-Alafort, Laura [Department of Pharmaceutical Sciences, University of Padua, 35131 Padova (Italy)], E-mail: lmalafort@yahoo.com; Nadali, Anna; Pasut, Gianfranco; Zangoni, Elena [Department of Pharmaceutical Sciences, University of Padua, 35131 Padova (Italy); De Caro, Raffaele [Department of Anatomy and Physiology, University of Padua, 35131 Padova (Italy); Cariolato, Luca [Department of Pharmaceutical Sciences, University of Padua, 35131 Padova (Italy); Giron, Maria Cecilia [Department of Pharmacology and Anesthesiology, University of Padua, 35131 Padova (Italy); Castagliuolo, Ignazio [Department of Histology, Microbiology and Medical Biotechnologies, University of Padua, 35131 Padova (Italy); Veronese, Francesco M.; Mazzi, Ulderico [Department of Pharmaceutical Sciences, University of Padua, 35131 Padova (Italy)

    2009-01-15

    The antimicrobial peptide ubiquicidin (UBI) directly labeled with technetium-99m ({sup 99m}Tc) has recently been shown to be specifically taken up at sites of infection; however, its chemical structure is not well defined. To address this problem, the aim of the present study was to label UBI using poly(ethyleneglycol)-N-(N-(3-diphenylphosphinopropionyl)glycyl) -S-tritylcysteine ligand (PEG-PN{sub 2}S) in order to compare its ability to detect infection sites with that of {sup 99m}Tc-UBI. Methods: The PN{sub 2}S-PEG-UBI conjugate was prepared and labeled with {sup 99m}Tc, and its radiochemical purity was subsequently assessed. The stability of the conjugate to cysteine challenge and dilution with both saline solution and phosphate buffer was determined and serum stability and protein binding were also assessed. In vivo studies were carried out in healthy mice to study the biodistribution of {sup 99m}Tc-PN{sub 2}S-PEG-UBI and its precursor {sup 99m}Tc-PN{sub 2}S-PEG and in infected mice to compare the uptakes of {sup 99m}Tc-UBI and {sup 99m}Tc-PN{sub 2}S-PEG-UBI at the site of infection using scintigraphic imaging and ex vivo tissue counting. Results: {sup 99m}Tc-PN{sub 2}S-PEG-UBI was obtained with high radiochemical purity (98{+-}1%) and high stability. The amphiphilic nature of the conjugate leads to a tendency to form micellar aggregates that explain the high protein binding values obtained. Biodistribution studies in mice showed low renal clearance followed by a predominant reticuloendothelial system clearance that limits its application in the abdominal area. Statistical analysis revealed no significant difference between {sup 99m}Tc-UBI and {sup 99m}Tc-PN{sub 2}S-PEG-UBI uptake in infected mouse thigh, and the site of infection was clearly visualized using scintigraphic imaging. Conclusions: {sup 99m}Tc-PN{sub 2}S-PEG-UBI proved to be as effective as {sup 99m}Tc-UBI in detecting sites of infection; however, the well-defined chemical structure of {sup 99m}Tc-PN

  1. Extraordinary improvement of gas-sensing performances in SnO2 nanofibers due to creation of local p-n heterojunctions by loading reduced graphene oxide nanosheets.

    Science.gov (United States)

    Lee, Jae-Hyoung; Katoch, Akash; Choi, Sun-Woo; Kim, Jae-Hun; Kim, Hyoun Woo; Kim, Sang Sub

    2015-02-11

    We propose a novel approach to improve the gas-sensing properties of n-type nanofibers (NFs) that involves creation of local p-n heterojunctions with p-type reduced graphene oxide (RGO) nanosheets (NSs). This work investigates the sensing behaviors of n-SnO2 NFs loaded with p-RGO NSs as a model system. n-SnO2 NFs demonstrated greatly improved gas-sensing performances when loaded with an optimized amount of p-RGO NSs. Loading an optimized amount of RGOs resulted in a 20-fold higher sensor response than that of pristine SnO2 NFs. The sensing mechanism of monolithic SnO2 NFs is based on the joint effects of modulation of the potential barrier at nanograin boundaries and radial modulation of the electron-depletion layer. In addition to the sensing mechanisms described above, enhanced sensing was obtained for p-RGO NS-loaded SnO2 NFs due to creation of local p-n heterojunctions, which not only provided a potential barrier, but also functioned as a local electron absorption reservoir. These mechanisms markedly increased the resistance of SnO2 NFs, and were the origin of intensified resistance modulation during interaction of analyte gases with preadsorbed oxygen species or with the surfaces and grain boundaries of NFs. The approach used in this work can be used to fabricate sensitive gas sensors based on n-type NFs.

  2. Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control.

    Science.gov (United States)

    Lee, Sang-Won; Cha, Seung-Hwan; Choi, Kyung-Jae; Kang, Byoung-Ho; Lee, Jae-Sung; Kim, Sae-Wan; Kim, Ju-Seong; Jeong, Hyun-Min; Gopalan, Sai-Anand; Kwon, Dae-Hyuk; Kang, Shin-Won

    2016-01-07

    We propose a solution-processable ultraviolet (UV) photodetector with a pn-heterojunction hybrid photoactive layer (HPL) that is composed of poly-n-vinylcarbazole (PVK) as a p-type polymer and ZnO nanoparticles (NPs) as an n-type metal oxide. To observe the effective photo-inducing ability of the UV photodetector, we analyzed the optical and electrical properties of HPL which is controlled by the doping concentration of n-type ZnO NPs in PVK matrix. Additionally, we confirmed that the optical properties of HPL dominantly depend on the ZnO NPs from the UV-vis absorption and the photoluminescence (PL) spectral measurements. This HPL can induce efficient charge transfer in the localized narrow pn-heterojunction domain and increases the photocurrent gain. It is essential that proper doping concentration of n-type ZnO NPs in polymer matrix is obtained to improve the performance of the UV photodetector. When the ZnO NPs are doped with the optimized concentration of 3.4 wt.%, the electrical properties of the photocurrent are significantly increased. The ratio of the photocurrent was approximately 10³ higher than that of the dark current.

  3. Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control

    Directory of Open Access Journals (Sweden)

    Sang-Won Lee

    2016-01-01

    Full Text Available We propose a solution-processable ultraviolet (UV photodetector with a pn-heterojunction hybrid photoactive layer (HPL that is composed of poly-n-vinylcarbazole (PVK as a p-type polymer and ZnO nanoparticles (NPs as an n-type metal oxide. To observe the effective photo-inducing ability of the UV photodetector, we analyzed the optical and electrical properties of HPL which is controlled by the doping concentration of n-type ZnO NPs in PVK matrix. Additionally, we confirmed that the optical properties of HPL dominantly depend on the ZnO NPs from the UV-vis absorption and the photoluminescence (PL spectral measurements. This HPL can induce efficient charge transfer in the localized narrow pn-heterojunction domain and increases the photocurrent gain. It is essential that proper doping concentration of n-type ZnO NPs in polymer matrix is obtained to improve the performance of the UV photodetector. When the ZnO NPs are doped with the optimized concentration of 3.4 wt.%, the electrical properties of the photocurrent are significantly increased. The ratio of the photocurrent was approximately 103 higher than that of the dark current.

  4. In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode

    Science.gov (United States)

    Phuan, Yi Wen; Ibrahim, Elyas; Chong, Meng Nan; Zhu, Tao; Lee, Byeong-Kyu; Ocon, Joey D.; Chan, Eng Seng

    2017-01-01

    Nanostructured nickel oxide-hematite (NiO/α-Fe2O3) p-n junction photoanodes synthesized from in situ doping of nickel (Ni) during cathodic electrodeposition of hematite were successfully demonstrated. A postulation model was proposed to explain the fundamental mechanism of Ni2+ ions involved, and the eventual formation of NiO on the subsurface region of hematite that enhanced the potential photoelectrochemical water oxidation process. Through this study, it was found that the measured photocurrent densities of the Ni-doped hematite photoanodes were highly dependent on the concentrations of Ni dopant used. The optimum Ni dopant at 25 M% demonstrated an excellent photoelectrochemical performance of 7-folds enhancement as compared to bare hematite photoanode. This was attributed to the increased electron donor density through the p-n junction and thus lowering the energetic barrier for water oxidation activity at the optimum Ni dopant concentration. Concurrently, the in situ Ni-doping of hematite has also lowered the photogenerated charge carrier transfer resistance as measured using the electrochemical impedance spectroscopy. It is expected that the fundamental understanding gained through this study is helpful for the rational design and construction of highly efficient photoanodes for application in photoelectrochemical process.

  5. Two-step electrodeposition to fabricate the p-n heterojunction of a Cu2O/BiVO4 photoanode for the enhancement of photoelectrochemical water splitting.

    Science.gov (United States)

    Bai, Shouli; Liu, Jingchao; Cui, Meng; Luo, Ruixian; He, Jing; Chen, Aifan

    2018-05-15

    A Cu2O/BiVO4 p-n heterojunction based photoanode in photoelectrochemical (PEC) water splitting is fabricated by a two-step electrodeposition method on an FTO substrate followed by annealing treatment. The structures and properties of the samples are characterized by XRD, FESEM, HRTEM, XPS and UV-visible spectra. The photoelectrochemical activity of the photoanode in water oxidation has been investigated and measured in a three electrode quartz cell system; the obtained maximum photocurrent density of 1.72 mA cm-2 at 1.23 V vs. RHE is 4.5 times higher than that of pristine BiVO4 thin films (∼0.38 mA cm-2). The heterojunction based photoanode also exhibits a tremendous cathodic shift of the onset potential (∼420 mV) and enhancement in the IPCE value by more than 4-fold. The enhanced photoelectrochemical properties of the Cu2O/BiVO4 photoelectrode are attributed to the efficient separation of the photoexcited electron-hole pairs caused by the inner electronic field (IEF) of the p-n heterojunction.

  6. Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions.

    Science.gov (United States)

    Wang, Cong; Yang, Shengxue; Xiong, Wenqi; Xia, Congxin; Cai, Hui; Chen, Bin; Wang, Xiaoting; Zhang, Xinzheng; Wei, Zhongming; Tongay, Sefaattin; Li, Jingbo; Liu, Qian

    2016-10-12

    Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p-n heterojunctions created by vertically stacking p-type multilayer ReSe 2 and n-type multilayer WS 2 : (1) well-defined strong gate-tunable diode-like current rectification across the p-n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe 2 /WS 2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.

  7. Composition determination of quaternary GaAsPN layers from single X-ray diffraction measurement of quasi-forbidden (002) reflection

    Energy Technology Data Exchange (ETDEWEB)

    Tilli, J.-M., E-mail: juha-matti.tilli@iki.fi; Jussila, H.; Huhtio, T.; Sopanen, M. [Department of Micro and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland); Yu, K. M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2014-05-28

    GaAsPN layers with a thickness of 30 nm were grown on GaP substrates with metalorganic vapor phase epitaxy to study the feasibility of a single X-ray diffraction (XRD) measurement for full composition determination of quaternary layer material. The method is based on the peak intensity of a quasi-forbidden (002) reflection, which is shown to vary with changing arsenic content for GaAsPN. The method works for thin films with a wide range of arsenic contents and shows a clear variation in the reflection intensity as a function of changing layer composition. The obtained thicknesses and compositions of the grown layers are compared with accurate reference values obtained by Rutherford backscattering spectroscopy combined with nuclear reaction analysis measurements. Based on the comparison, the error in the XRD defined material composition becomes larger with increasing nitrogen content and layer thickness. This suggests that the dominating error source is the deteriorated crystal quality due to the nonsubstitutional incorporation of nitrogen into the crystal lattice and strain relaxation. The results reveal that the method overestimates the arsenic and nitrogen content within error margins of about 0.12 and about 0.025, respectively.

  8. Cross sections for (p,n) and (d,2n) reactions on /sup 79/Br and /sup 127/I: An evaluation of literature and model calculated results

    Energy Technology Data Exchange (ETDEWEB)

    Lanier, R.G.; Mustafa, M.G.; West, H.I. Jr.

    1989-02-01

    We have evaluated (p,n) and (d,2n) cross sections on /sup 79/Br and /sup 127/I, and made these cross sections available for test diagnostics. We believe that these interim cross sections are of reasonable accuracy and should be used for diagnostic interpretations until more precise measurements can be made. Our evaluation consisted of a literature search and an examination of the available experimental data. These data were supplemented by statistical model calculations using both the STAPRE and ALICE codes. We found reasonably good measured data (from threshold to the peak of the excitation function) for the (p,n) reaction on both /sup 79/Br and /sup 127/I. The literature data for the (d,2n) reaction on /sup 127/I are questionable and no data were found for the (d,2n) reaction on /sup 79/Br. We have, therefore, relied completely on calculations for the (d,2n) cross sections for both /sup 79/Br and /sup 127/I. 4 figs., 5 tabs.

  9. Properties of the fullerene C_6_0-containing PN Lin49 in the SMC; Explanations of strong near-IR excess

    International Nuclear Information System (INIS)

    Otsuka, Masaaki; Kemper, Francisca; Leal-Ferreira, Marcelo L.; Aleman, Isabel; Ochsendorf, Bram; Bernard-Salas, Jeronimo; Cami, Jan; Peeters, Els

    2016-01-01

    We performed a detailed spectroscopic analysis of the fullerene C_6o-containing planetary nebula (PN) Lin49 in the Small Magellanic Cloud (SMC). Lin49 is a C-rich and metal- deficient PN (Z∼⃒0.0006) and its nebular abundances are in agreement with the AGB model for the initially 1.25M_☉ stars with the metallicity Z = 0.001 of Fishlock et al. (2014, [1]). By stellar absorption fitting with TLUSTY, we derived stellar abundances, effective temperature, and surface gravity. We constructed the photo-ionization model with CLOUDY in order to investigate physical conditions of Lin49. The model with the 0.005-0.1 μm radius graphite and a constant hydrogen density shell could not fit the ∼⃒1-5 μm SED owing to the strong near-IR excess. We propose that the near-IR excess indicates (1) the presence of extremely small carbon molecules or (2) the presence of high-density structure surrounding the central star. (paper)

  10. Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

    Science.gov (United States)

    Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

    2018-01-01

    Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

  11. Synthesis and visible-light-driven photocatalytic activity of p-n heterojunction Ag2O/NaTaO3 nanocubes

    Science.gov (United States)

    Yang, Songbo; Xu, Dongbo; Chen, Biyi; Luo, Bifu; Yan, Xu; Xiao, Lisong; Shi, Weidong

    2016-10-01

    The constructing of p-n heterojunction photocatalytic system has received much attention in environmental purification and hydrogen generation from water. In this study, an efficient visible-light-driven p-n heterojunction Ag2O/NaTaO3 was successfully prepared by chemical precipitation method at room temperature. It showed an enhanced photocatalytic activity for the degradation of rhodamine B (RhB) under visible-light irradiation, much higher than those of either individual Ag2O or NaTaO3. The reactive species scavenger results indicated the superoxide anion radicals (rad O2-) played key roles in RhB decoloration. From the experimental results and the relative band gap position of these semiconductors, a detailed possible photocatalytic mechanism of the Ag2O/NaTaO3 heterojunction under visible light was proposed. The enhancement of the photocatalytic activity was attributed to the interfacial electronic interaction between NaTaO3 and Ag2O and the high migration efficiency of photogenerated carriers.

  12. Study of deuteron break-up at low energies in the reactions D(d,pn)d and D(d,dn)p

    International Nuclear Information System (INIS)

    Cocu, Francis; Ambrosino, Georges; Guerreau, Daniel.

    1977-06-01

    Quasi-free scattering in the reactions d+D=n+p+d has been studied at incident energies between 7 and 12 MeV by steps of 1 MeV. In a kinematically complete experiment, the cross sections were measured for the coincidences (p,n) and for the coincidences (d,n). The energy of the charged particle was also enregistered. The detector of the charged particles was put at an angle thetasub(p)=thetasub(d)=19 0 5 counted from the incident axis, the detector of neutrons at thetasub(n)=-30 0 . The geometry was coplanar. Pure gaseous target gives an excellent signal/back-ground ratio. The measure of the time-of-flight of the neutron allows indirectly the discrimination of the nature of the detected charged particle. Absolute cross sections are compared with the results of the complete Born approximation. The nucleon-nucleon potential is spin-dependant. The shape of the measured (d,n) spectra is fairly well reproduced but not its intensity. The (p,n) spectra is not so well reproduced but the distortion diminishes on increasing the incident energy [fr

  13. Applications of an energy-dispersive pnCCD for X-ray reflectivity: Investigation of interdiffusion in Fe-Pt multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Abboud, Ali; Send, Sebastian; Pietsch, Ullrich [Universitaet Siegen, FB Physik, Walter-Flex-Strasse 3, 57072 Siegen (Germany); Hartmann, Robert [PNSensor GmbH, Muenchen (Germany); Strueder, Lothar [Universitaet Siegen, FB Physik, Walter-Flex-Strasse 3, 57072 Siegen (Germany); Planck-Institut fuer extraterrestrische Physik (MPE), Muenchen (Germany); MPI Halbleiterlabor, Muenchen (Germany); Savan, Alan; Ludwig, Alfred [Ruhr-Universitaet Bochum, Bochum (Germany); Zotov, Nikolay [Forschungszentrum Juelich, Juelich (Germany)

    2011-11-15

    A frame store pn-junction CCD (pnCCD) detector was applied to study thermally induced interdiffusion in Fe/Pt thin film multilayers (MLs) in a temperature range between 300 and 585 K. Based on the energy resolution of the detector the reflectivity was measured simultaneously in a spectral range between 8 keV < E < 20 keV including the Pt L-edge energies close to 11.5 keV. Above T = 533 K we find a strong drop of intensities at 1st and 2nd order ML Bragg peak interpreted by mutual interdiffusion. Considering a simulated model of interdiffusion it has been found that the concentration of iron that diffuses into the platinum sub layers is higher than that of platinum into iron. The time dependence of inter diffusion was also calculated in the range of 533-568 K and was described by the Arrhenius equation D(T) = D{sub 0} exp(-H{sub a}/k{sub B}T). The activation energy for the MLs used [Fe 1.7 nm/Pt 2 nm]{sub 50} was found to be 0.94 {+-} 0.22 eV. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

    Science.gov (United States)

    Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

    2017-12-04

    High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

  15. THE ORIGIN AND EVOLUTION OF THE HALO PN BoBn 1: FROM A VIEWPOINT OF CHEMICAL ABUNDANCES BASED ON MULTIWAVELENGTH SPECTRA

    International Nuclear Information System (INIS)

    Otsuka, Masaaki; Tajitsu, Akito; Hyung, Siek; Izumiura, Hideyuki

    2010-01-01

    We have performed a comprehensive chemical abundance analysis of the extremely metal-poor ([Ar/H] -6 M sun . The photoionization models built with non-LTE theoretical stellar atmospheres indicate that the progenitor was a 1-1.5 M sun star that would evolve into a white dwarf with an ∼0.62 M sun core mass and ∼0.09 M sun ionized nebula. We have measured a heliocentric radial velocity of +191.6 ±1.3 km s -1 and expansion velocity 2V exp of 40.5 ± 3.3 km s -1 from an average over 300 lines. The derived elemental abundances have been reviewed from the standpoint of theoretical nucleosynthesis models. It is likely that the elemental abundances except N could be explained either by a 1.5 M sun single star model or by a binary model composed of 0.75 M sun + 1.5 M sun stars. Careful examination implies that BoBn 1 has evolved from a 0.75 M sun + 1.5 M sun binary and experienced coalescence during the evolution to become a visible PN, similar to the other extremely metal-poor halo PN, K 648 in M 15.

  16. Preparation, characterization and activity evaluation of p-n junction photocatalyst p-CaFe2O4/n-Ag3VO4 under visible light irradiation

    International Nuclear Information System (INIS)

    Chen Shifu; Zhao Wei; Liu Wei; Zhang Huaye; Yu Xiaoling; Chen Yinghao

    2009-01-01

    p-n junction photocatalyst p-CaFe 2 O 4 /n-Ag 3 VO 4 was prepared by ball milling Ag 3 VO 4 in H 2 O doped with p-type CaFe 2 O 4 . The structural and optical properties of the photocatalyst were characterized by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and UV-vis diffuse reflection spectrum (DRS). The photocatalytic activity was evaluated by photocatalytic degradation of methylene blue (MB) under visible light irradiation. The results showed that the photocatalytic activity of the p-CaFe 2 O 4 /n-Ag 3 VO 4 was higher than that of Ag 3 VO 4 . When the amount of doped p-CaFe 2 O 4 was 2.0 wt.% and the p-CaFe 2 O 4 /n-Ag 3 VO 4 was ball milled for 12 h, the photocatalytic degradation efficiency was 85.4%. Effect of ball milling time on the photocatalytic activity of the photocatalyst was also investigated. The mechanisms of the increase in the photocatalytic activity were discussed by the p-n junction principle.

  17. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    Energy Technology Data Exchange (ETDEWEB)

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

    2012-06-29

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  18. Change of I-V characteristics of SiC diodes upon reactor irradiation; Modification des caracteristiques I-V de jonctions p-n au SiC du fait d'une irradiation dans un reacteur; Izmeneniya kharakteristik I-V vyrashchennogo v SiC perekhoda tipa p-n posle oblucheniya ego v reaktore; Modificaciones que sufren por irradiacion en un reactor las caracteristicas I-V de uniones p-n en SiC

    Energy Technology Data Exchange (ETDEWEB)

    Heerschap, M; De Coninck, R [Solid State Physics Dept., SCK-CEN, Mol (Belgium)

    1962-04-15

    In search for semiconductors, which can be used in high-flux reactors in order to measure flux distributions, we irradiated SiC p-n junctions in the Belgium BR-1 reactor. Two types of SiC-diodes of different origin have been irradiated. These junctions are grown in the Lely-furnace. The change in forward and reverse characteristics have been measured during and after irradiation up to temperatures of 150{sup o}C, while measurements up to a temperature of 500{sup o}C are in progress. It has been found that one type resists BR-1 neutrons up to an integrated flux of 10{sup 15} n/cm{sup 2}, while the other resists irradiation up to a flux of 10{sup 17} n/cm{sup 2}. The changes in characteristics are given as well as the result of some annealing experiments. (author) [French] En recherchant des semi-conducteurs pouvant servir a mesurer les distributions de flux dans les reacteurs a haut flux de neutrons, les auteurs ont irradie des jonctions p-n au SiC dans le reacteur belge BR-1. Deux types de diodes a SiC d'origines differentes ont ete ainsi irradies. Les jonctions en question sont preparees par etirage dans le four Lely. Les auteurs ont mesure les modifications subies par les caracteristiques I-V apres et pendant l'irradiation a des temperatures allant jusqu'a 150{sup o}C; ils poursuivent leurs mesures dans la gamme des temperatures allant de 150{sup o}C a 500{sup o}C. Us ont constate que l'un des types de diode a SiC resiste aux neutrons du reacteur BR-1 jusqu'a 10{sup 15} n/cm{sup 2}, tandis que l'autre type resiste a l'irradiation jusqu'a 10{sup 17} n/cm{sup 2}. Les auteurs indiquent les modifications subies par les caracteristiques, ainsi que le resultat de certaines experiences de recuit. (author) [Spanish] Los autores estan tratando de encontrar semiconductores con los que sea posible medir distribuciones de flujo en reactores de flujo elevado, y con este fin irradiaron uniones p-n del SiC en el reactor BR-1 de Belgica. Irradiaron dos tipos de diodos de SiC de

  19. Synthesis of flower-like Ag{sub 2}O/BiOCOOH p-n heterojunction with enhanced visible light photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shijie [Innovation & Application Institute, Zhejiang Ocean University, Zhoushan, Zhejiang Province 316022 (China); Zhejiang Provincial Key Laboratory of Health Risk Factors for Seafood, Zhoushan Municipal Center for Disease Control and Prevention, Zhoushan 316021 (China); State Environmental Protection Engineering Center for Pollution Treatment and Control in Textile Industry, College of Environmental Science and Engineering, Donghua University, Shanghai 201620 (China); Xu, Kaibing [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Research Center for Analysis and Measurement, Donghua University, Shanghai 201620 (China); Hu, Shiwei, E-mail: hushiweihai@163.com [Innovation & Application Institute, Zhejiang Ocean University, Zhoushan, Zhejiang Province 316022 (China); Jiang, Wei [Innovation & Application Institute, Zhejiang Ocean University, Zhoushan, Zhejiang Province 316022 (China); Zhejiang Provincial Key Laboratory of Health Risk Factors for Seafood, Zhoushan Municipal Center for Disease Control and Prevention, Zhoushan 316021 (China); Zhang, Junlei [Shanghai Key Laboratory of Atmospheric Particle Pollution and Prevention (LAP3), Department of Environmental Science and Engineering, Fudan University, Shanghai 200433 (China); Liu, Jianshe [State Environmental Protection Engineering Center for Pollution Treatment and Control in Textile Industry, College of Environmental Science and Engineering, Donghua University, Shanghai 201620 (China); Zhang, Lisha, E-mail: lszhang@dhu.edu.cn [State Environmental Protection Engineering Center for Pollution Treatment and Control in Textile Industry, College of Environmental Science and Engineering, Donghua University, Shanghai 201620 (China)

    2017-03-01

    Highlights: • Ag{sub 2}O/BiOCOOH p-n heterojunctions are prepared by a solvothermal deposition-precipitation method. • They consist of flower-like BiOCOOH microspheres decorated with Ag{sub 2}O nanoparticles. • Heterojunction with the Ag/Bi molar ratio of 0.2/1 showed the highest photocatalytic activity. • The photogenerated holes (h{sup +}) and superoxide radical anions (·O{sub 2}{sup −}) have been found to be the main reactive species. - Abstract: The development of efficient semiconductor heterojunction photocatalysts has drawn much attention. Herein, we have reported a kind of flower-like Ag{sub 2}O/BiOCOOH p-n heterojunction as a novel and efficient visible-light-driven photocatalyst. The Ag{sub 2}O/BiOCOOH heterojunctions have been successfully prepared via a solvothermal precipitation-deposition method. They consist of flower-like BiOCOOH microspheres (diameters: 1–2.5 μm) decorated with Ag{sub 2}O nanoparticles (size: ∼14 nm). In addition, optical characterization reveals that they have broad visible-light photo-absorption. Importantly, under visible-light irradiation (λ > 400 nm), all Ag{sub 2}O/BiOCOOH heterojunctions exhibit enhanced photocatalytic activity than pure BiOCOOH or Ag{sub 2}O for the degradation of rhodamine B (RhB) dye and para-chlorophenol (4-CP). Especially, the Ag{sub 2}O/BiOCOOH heterojunction with the Ag/Bi molar ratio of 0.2/1 shows the highest photocatalytic activity, which is even higher than the activity from the mechanical mixture (8 wt% Ag{sub 2}O + 92 wt% BiOCOOH). This enhanced photocatalytic performance could be predominantly attributed to the efficient separation of photogenerated electron-hole pairs. The photogenerated holes (h{sup +}) and superoxide radical anions (·O{sub 2}{sup −}) have been found to be the main reactive species responsible for the photodegradation of RhB dye in aqueous solution. Therefore, the Ag{sub 2}O/BiOCOOH p-n heterojunction has great potential to be used as a kind of efficient

  20. Measurement of the neutron flux distributions, epithermal index, Westcott thermal neutron flux in the irradiation capsules of hydraulic conveyer (Hyd) and pneumatic tubes (Pn) facilities of the KUR

    International Nuclear Information System (INIS)

    Chatani, Hiroshi

    2001-05-01

    The reactions of Au(n, γ) 198 Au and Ti(n, p) 47 or 48 Sc were used for the measurements of the thermal and epithermal (thermal + epithermal) and the fast neutron flux distributions, respectively. In the case of Hyd (Hydraulic conveyer), the thermal + epithermal and fast neutron flux distributions in the horizontal direction in the capsule are especially flat; the distortion of the fluxes are 0.6% and 5.4%, respectively. However, these neutron fluxes in the vertical direction are low at the top and high at the bottom of the capsule. These differences between the top and bottom are 14% for both distributions. On the other hand, in polyethylene capsules of Pn-1, 2, 3 (Pneumatic tubes Nos. 1, 2, 3), in contrast with Hyd, these neutron flux distributions in the horizontal direction have gradients of 8 - 18% per 2.5 cm diameter, and those on the vertical axis have a distortion of approximately 5%. The strength of the epithermal dE/E component relative to the neutron density including both thermal and epithermal neutrons, i.e., the epithermal index, for the hydraulic conveyer (Hyd) and pneumatic tube No.2 (Pn-2), in which the irradiation experiments can be achieved, are determined by the multiple foil activation method using the reactions of Au(n, γ) 198 Au and Co(n, γ) 60(m+g) Co. The epithermal index observed in an aluminum capsule of Hyd is 0.034-0.04, and the Westcott thermal neutron flux is 1.2x10 14 cm -2 sec -1 at approximately 1 cm above the bottom. The epithermal index in a Pn-2 polyethylene capsule was measured by not only the multiple foil activation method but also the Cd-ratio method in which the Au(n, γ) 198 Au reaction in a cadmium cover is also used. The epithermal index is 0.045 - 0.055, and the thermal neutron flux is 1.8x10 13 cm -2 sec -1 . (J.P.N.)

  1. Photoaffinity labeling of opiate (enkephalin) receptor of rat brain plasma membranes with 125I(D-Ala2, p-N3-Phe4-Met5)-enkephalin

    International Nuclear Information System (INIS)

    Yeung, C.W.T.

    1986-01-01

    A photoreactive (D-Ala 2 , p-N 3 -Phe 4 -Met 5 )enkephalin derivative was prepared, iodinated with carrier free 125 I and then purified by high performance liquid chromatography. The purified radioactive photoprobe was monoiodinated at the amino terminal tyrosine residue. This radioactive photoprobe was used to photoaffinity label plasma membranes prepared from rat brain, spinal cord and cerebellum. The photolabeled plasma membranes were analyzed by sodium dodecyl sulfate gel electrophoresis. A 46,000-daltons band was specifically photolabeled in the plasma membranes of brain and spinal cord but not in the plasma membranes from cerebellum. The photolabeling of this band was inhibited by peptides related to enkephalin by not but substance P or gastrin tetrapeptide. These data demonstrate that the labeled 46,000-daltons band is a protein of the opiate (enkephalin)receptor

  2. Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy

    Science.gov (United States)

    Fujikura, Hajime; Hayashi, Kentaro; Horikiri, Fumimasa; Narita, Yoshinobu; Konno, Taichiro; Yoshida, Takehiro; Ohta, Hiroshi; Mishima, Tomoyoshi

    2018-04-01

    In vertical GaN PN diodes (PNDs) grown entirely by metal–organic chemical vapor deposition (MOCVD), large current nonuniformity was observed. This nonuniformity was induced by macrosteps on the GaN surface through modulation of carbon incorporation into the n-GaN crystal. It was eliminated in a hybrid PND consisting of a carbon-free n-GaN layer grown by hydride vapor phase epitaxy (HVPE) and an MOCVD-regrown p-GaN layer. The hybrid PND showed a fairly low on-resistance (2 mΩ cm2) and high breakdown voltage (2 kV) even without a field plate electrode. These results clearly indicated the strong advantages of the HVPE-grown drift layer for improving power device performance, uniformity, and yield.

  3. Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

    Science.gov (United States)

    Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

    2017-12-01

    Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

  4. Analyzing powers for the three-nucleon breakup reaction 1H(d vector,p)pn at 16 MeV

    International Nuclear Information System (INIS)

    Brown, R.E.; Ohlsen, G.G.; Correll, F.D.; Hardekopf, R.A.; Jarmie, N.

    1980-01-01

    Analyzing powers for the 1 H(d,p)pn reaction were measured at 16.0 MeV and beam polarization of approximately 0.82. Similar data for the elastic scattering 1 H(d,p) 2 H were also taken. The breakup analyzing power A/sub xz/, which attains the largest magnitude, is shown as a function of excitation energy. Angular distributions of elastic and breakup analyzing powers are compared; large differences are noted for A/sub xx/ and A/sub xz/. It is found that 1-MeV energy bins are too large to use in the study of singlet-state effects. 2 figures

  5. Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions

    Directory of Open Access Journals (Sweden)

    Mykola O. Semenenko

    2016-01-01

    Full Text Available Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior to hydrogen plasma treatment and deposition of diamond-like carbon antireflection films led to the improvement of the cell efficiency by up to 60%. Radio frequency waves support plasma generation and improve photoelectric conversion mainly due to reduction of internal stresses at the interfaces. Application of reactive ion etching technique removes the broken layer, reduces elastic strain in the wafer, decreases recombination of charge carriers in the bulk, and provides cell efficiency increase by up to ten times.

  6. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    KAUST Repository

    Li, Ming Yang

    2015-07-30

    Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

  7. Model-Independent Analysis of the Neutron-Proton Final-State Interaction Region in the $\\pi\\pi \\to pn\\pi^+$ Reaction

    CERN Document Server

    Uzikov, Yu N

    2001-01-01

    Experimental data on the \\pi\\pi\\to pn\\pi^+ reaction measured in an exclusive two-arm experiment at 800 MeV show a narrow peak arising from the strong proton-neutron final-state interaction. It was claimed, within the framework of a certain model, that this peak contained up to a 25 % spin-singlet final-state contribution. By comparing the data with those of \\pi\\pi\\to d\\pi^+ in a largely model-independent way, it is here demonstrated that at all the angles measured the whole of the peak could be explained as being due to spin-triplet final states, with the spin-singlet being at most a few percent. Good qualitative agreement with the measured proton analysing power is also found within this approach.

  8. Problems in the phenomenological analysis of cross-section difference sigmasub(pp)-sigmasub(pn) and sigmasub(antiproton proton)-sigmasub(antiproton neutron)

    International Nuclear Information System (INIS)

    Bouquet, A.; Diu, B.; Leader, E.; Nicolescu, B.

    1976-01-01

    It is shown that uncertainties in the exact value of the Glauber correction make it virtually impossible to deduce any significant conclusions about the asymptotic behaviour of the sigmasub(pp)-sigmasub(pn) and sigma sub(antiproton proton)-sigmasub(antiproton neutron) cross-section differences, if only data on pp, pd, antiproton proton and antiprotond collisions are used. Nevertheless it can be demonstrated that the imaginary part of the rho exchange amplitude is basically Regge behaved. If, on the other hand, neutron beam data on sigmasub(np) are used, it can be shown that the imaginary part of the A 2 exchange amplitude contains a non-Regge, growing, asymptotic component, reminiscent of that found in the I=) symmetric amplitude

  9. INSOLVENSI DALAM HUKUM KEPAILITAN DI INDONESIA (Studi Putusan No.48/Pailit/2012/Pn.Niaga.Jkt.Pst Antara PT. Telekomunikasi Selular Vs PT. Primajaya Informatika

    Directory of Open Access Journals (Sweden)

    hervana wahyu Prihatmaka

    2015-11-01

    Full Text Available Amendments to the Bankruptcy Law is dominant protect the interests of creditors, because it should be a provision which requires that the debtor should have to go bankrupt. This is contrary to the philosophy of universal bankruptcy. This study aims to determine the bankruptcy provisions in the bankruptcy law in Indonesia and analyze the determination of bankruptcy within the bankruptcy decision No. 48/Bankrupt/2012/PN.NIAGA.JKT.PST. This research is a normative law with normative juridical approach. The data used in this research is secondary data. This study uses literature study with qualitative analysis methods. The authors conclude, first, the provisions of bankruptcy in Indonesia is based on article 2, paragraph (1, which is when the debtor does not repay the debt that will be the bankruptcy estate will go into phase bankruptcy with two possibilities, namely (i after being declared bankrupt (ii Through PKPU. Secondly, Award Bankrupt Assets not yet in the stage of bankruptcy because of the Supreme Court overturned the decision of the Commercial Court Decision Number 48/Bankrupt/2012/PN.NIAGA.JKT.PST through decision Number 704K/Pdt.Sus/2012, which ended before the bankruptcy Telkomsel Meeting Debt Verification completed. Advice, first there should be amendments to the Law No. 37 of 2004 specifically test the concept of insolvency and bankruptcy. The authors are aware that this study is not perfect, so the authors hope that further research is done, to continue and resolve the issues raised in this study. Keywords: Bankruptcy, Insolvency, the Rule of Law

  10. Controlled carrier screening in p-n NiO/GaN piezoelectric generators by an Al2O3 insertion layer

    Science.gov (United States)

    Johar, Muhammad Ali; Jeong, Dae Kyung; Afifi Hassan, Mostafa; Kang, Jin-Ho; Ha, Jun-Seok; Key Lee, June; Ryu, Sang-Wan

    2017-12-01

    The performance of a piezoelectric generator (PG) depends significantly on the internal screening process inside the device. As piezoelectric charges appear on both ends of the piezoelectric crystal, internal screening starts to decrease the piezoelectric bias. Therefore, the piezoelectric energy generated by external stress is not fully utilized by external circuit, which is the most challenging aspect of high-efficiency PGs. In this work, the internal screening effect of a NiO/GaN p-n PG was analyzed and controlled with an Al2O3 insertion layer. Internal screening in the p-n diode PG was categorized into free-carrier screening in neutral regions and junction screening due to charge drift across the junction. It was observed that junction screening could be significantly suppressed by inserting an Al2O3 layer and that effect was dominant in a leaky diode PG. With this implementation, the piezoelectric bias of the NiO/GaN PG was improved by a factor of ~100 for high-leakage diodes and a factor of ~1.6 for low-leakage diodes. Consequently, NiO/Al2O3/GaN PGs under a stress of 5 MPa provided a piezoelectric bias of 12.1 V and a current density of 2.25 µA cm-2. The incorporation of a highly resistive Al2O3 layer between p-NiO and n-GaN layers in NiO/GaN heterojunctions provides an efficient means of improving the piezoelectric performance by controlling the internal screening of the piezoelectric field.

  11. Investigation of the OZI selection rule for connected quark diagrams in hadronic processes: 3. Diffractive φ and ω production in pN collisions at 70 GeV

    International Nuclear Information System (INIS)

    1996-01-01

    The ratio between the cross sections for the diffractive production of pφ and pω systems in pN collisions at Ep=70 GeV is determined by using data from the SPHINX detector. A significant violation of the OZI rule in proton-induced transitions is observed

  12. Integrated Advanced Microwave Sounding Unit-A (AMSU-A). Engineering Test Report: METSAT A1 Signal Processor (P/N: 1331670-2, S/N: F04)

    Science.gov (United States)

    Lund, D.

    1998-01-01

    This report presents a description of the tests performed, and the test data, for the A1 METSAT Signal Processor Assembly PN: 1331679-2, S/N F04. The assembly was tested in accordance with AE-26754, "METSAT Signal Processor Scan Drive Test and Integration Procedure." The objective is to demonstrate functionality of the signal processor prior to instrument integration.

  13. A Au/Cu2O-TiO2 system for photo-catalytic hydrogen production. A pn-junction effect or a simple case of in situ reduction?

    KAUST Repository

    Sinatra, Lutfan; LaGrow, Alec P.; Peng, Wei; Kirmani, Ahmad R.; Amassian, Aram; Idriss, Hicham; Bakr, Osman

    2015-01-01

    Photo-catalytic H2 production from water has been studied over Au-Cu2O nanoparticle deposited on TiO2 (anatase) in order to probe into both the plasmon resonance effect (Au nanoparticles) and the pn-junction at the Cu2O-TiO2 interface. The Au-Cu2O

  14. Regio- and stereo-selective polymerization of 1,3-butadiene catalyzed by phosphorus–nitrogen PN3-pincer cobalt(ii) complexes

    KAUST Repository

    Gong, Dirong

    2016-11-11

    A new family of cobalt complexes (CoCl2-H, CoCl2-Me, CoCl2-iPr, CoBr2-H, CoBr2-Me, CoBr2-iPr, CoI2-H, CoI2-Me, and CoI2-iPr) supported by a PN3 ligand (6-(N,N′-di-t-butylphosphino)-2-pyrazol-yl-aminopyridine) have been prepared and fully characterized by FT-IR, elemental analysis, and X-ray analysis. The X-ray analysis reveals a trigonal bipyramidal conformation in the solid state for all representative complexes, CoCl2-H, CoBr2-H, CoBr2-iPr and CoI2-Me. The cobalt center is chelated by the PN3 ligand through the pyridinyl nitrogen, the pyrazol nitrogen and the phosphorus donor, with a long Co-P bond distance indicating a labile character. On activation with AlEt2Cl, Al2Et3Cl3, MAO, [Ph3C]+[B(C6F5)4]-/AliBu3 or AliBu3, cis-1,4 selective butadiene polymerization was achieved with up to 98.6% selectivity. The polymerization results show that the cis-1,4 selectivity is influenced by the steric hindrance, increasing with the bulkiness of the substituent groups (CoX2-iPr > CoX2-Me > CoX2-H) at the 3,5-positions of the pyrazole moiety, together with a slight decrease in activity. The activity changes in the order CoCl2L ≈ CoBr2L > CoI2L (for the same ligand L) when MAO is used as the activator, while the high level of cis-1,4 selectivity is maintained. It is possible to switch the selectivity from cis-1,4 to syndiotactic-1,2 by adding PPh3 © The Royal Society of Chemistry.

  15. Layered MoSe2/Bi2WO6 composite with P-N heterojunctions as a promising visible-light induced photocatalyst

    Science.gov (United States)

    Xie, Taiping; Liu, Yue; Wang, Haiqiang; Wu, Zhongbiao

    2018-06-01

    In this paper, layered MoSe2/Bi2WO6 composites were fabricated by a simple bath sonication method for photocatalytic applications. Their photocatalytic performances were then investigated via the photocatalytic oxidation of gaseous toluene under visible-light irradiation. As a result, 1.5%-MoSe2/Bi2WO6 catalyst showed the highest activity with a degradation rate of nearly 80% during three-hour visible-light irradiation. The k value determined of 1.5%-MoSe2/Bi2WO6 was approximately 6 times higher than that of pure Bi2WO6 and 7 times higher compared with pure MoSe2. After a series of characterizations, it was concluded that the p-n heterojunctions of MoSe2/Bi2WO6 composites with strong interlayer interactions could effectively prolong the life time of photoinduced electron-hole pairs. And both the contents of surface superoxide and hydroxyl radicals were thereby increased, benefitting the photocatalytic process. Furthermore, the hydroxyl radicals and holes were found to be the major active species. This work provided a way to design photocatalyst with enhanced visible-light driven photoactivity toward indoor air pollutants purification.

  16. Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3

    Science.gov (United States)

    Zhang, Jiaye; Han, Shaobo; Luo, Weihuang; Xiang, Shuhuai; Zou, Jianli; Oropeza, Freddy E.; Gu, Meng; Zhang, Kelvin H. L.

    2018-04-01

    Transparent oxide semiconductors hold great promise for many optoelectronic devices such as transparent electronics, UV-emitting devices, and photodetectors. A p-n heterojunction is the most ubiquitous building block to realize these devices. In this work, we report the fabrication and characterization of the interface properties of a transparent heterojunction consisting of p-type NiO and n-type perovskite BaSnO3. We show that high-quality NiO thin films can be epitaxially grown on BaSnO3 with sharp interfaces because of a small lattice mismatch (˜1.3%). The diode fabricated from this heterojunction exhibits rectifying behavior with a ratio of 500. X-ray photoelectron spectroscopy reveals a type II or "staggered" band alignment with valence and conduction band offsets of 1.44 eV and 1.86 eV, respectively. Moreover, a large upward band bending potential of 0.90 eV for BaSnO3 and a downward band bending potential of 0.15 eV for NiO were observed in the interface region. Such electronic properties have important implication for optoelectronic applications as the large built-in potential provides favorable energetics for photo-generated electron-hole separation/migration.

  17. Evaluation of a new ballistic vest design for compliance with Standard No. PN-V-87000:2011 using physiological tests.

    Science.gov (United States)

    Marszałek, Anna; Grabowska, Grażyna; Łężak, Krzysztof

    2018-05-09

    Research into newly developed ballistic vests to be worn by police officers under clothing was carried out with air temperature conditions of +20 °C. A ballistic vest should incorporate protective features, comfort and ergonomics. The thermal strain on users who wore the vests was evaluated as an average and individually, after they had been conditioned in high (+50 °C), low (-40 °C) or neutral (+20 °C) air temperatures, while performing various occupational activities. Research involved six police officers aged 36-42 years, who wore civilian clothing used in moderate environmental conditions. During the tests, physiological parameters (internal temperature, local skin temperatures and amount of sweat secreted) were determined. The ease of doing exercises while wearing the vests, vest service and level of discomfort in use were assessed. Research showed that the vests tested, both as an average and individually, meet the requirements of Standard No. PN-V-87000:2011 (clause 4.5).

  18. High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Lanyi; Ying, Jun; Han, Jinhua; Zhang, Letian, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn; Wang, Wei, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2016-04-25

    In this letter, we demonstrate a high reliable and stable organic field-effect transistor (OFET) based nonvolatile memory (NVM) with a polymer poly(4-vinyl phenol) (PVP) as the charge trapping layer. In the unipolar OFETs, the inreversible shifts of the turn-on voltage (V{sub on}) and severe degradation of the memory window (ΔV{sub on}) at programming (P) and erasing (E) voltages, respectively, block their application in NVMs. The obstacle is overcome by using a pn-heterojunction as the active layer in the OFET memory, which supplied a holes and electrons accumulating channel at the supplied P and E voltages, respectively. Both holes and electrons transferring from the channels to PVP layer and overwriting the trapped charges with an opposite polarity result in the reliable bidirectional shifts of V{sub on} at P and E voltages, respectively. The heterojunction OFET exhibits excellent nonvolatile memory characteristics, with a large ΔV{sub on} of 8.5 V, desired reading (R) voltage at 0 V, reliable P/R/E/R dynamic endurance over 100 cycles and a long retention time over 10 years.

  19. Benchmark experiment for the cross section of the 100Mo(p,2n)99mTc and 100Mo(p,pn)99Mo reactions

    Science.gov (United States)

    Takács, S.; Ditrói, F.; Aikawa, M.; Haba, H.; Otuka, N.

    2016-05-01

    As nuclear medicine community has shown an increasing interest in accelerator produced 99mTc radionuclide, the possible alternative direct production routes for producing 99mTc were investigated intensively. One of these accelerator production routes is based on the 100Mo(p,2n)99mTc reaction. The cross section of this nuclear reaction was studied by several laboratories earlier but the available data-sets are not in good agreement. For large scale accelerator production of 99mTc based on the 100Mo(p,2n)99mTc reaction, a well-defined excitation function is required to optimise the production process effectively. One of our recent publications pointed out that most of the available experimental excitation functions for the 100Mo(p,2n)99mTc reaction have the same general shape while their amplitudes are different. To confirm the proper amplitude of the excitation function, results of three independent experiments were presented (Takács et al., 2015). In this work we present results of a thick target count rate measurement of the Eγ = 140.5 keV gamma-line from molybdenum irradiated by Ep = 17.9 MeV proton beam, as an integral benchmark experiment, to prove the cross section data reported for the 100Mo(p,2n)99mTc and 100Mo(p,pn)99Mo reactions in Takács et al. (2015).

  20. Effect of resonance production and diffraction on the inclusive spectra of pions and protons in 19 GeV/c pn interactions

    Energy Technology Data Exchange (ETDEWEB)

    Baken, V.; Breivik, F.O.; Jacobsen, T. (Oslo Univ. (Norway). Fysisk Inst.)

    1984-01-01

    Bubble chamber data on pn interactions at 19 GeV/c are used to investigate the effects of nucleon diffraction and resonance production on the inclusive x- and psub(T)/sup 2/-distributions of protons and pions. We determine the differential distributions of p, ..pi../sup -/ and ..pi../sup +/ due to neutron and proton diffraction and similarly the distributions from the decay of the strong resonances ..delta../sup + +/(1232) and ..delta../sup -/(1232) and from rho/sup 0/(770). The x-distributions of the protons in the two c.m. hemispheres become quite similar when the effect of diffraction and ..delta../sup + +/ is subtracted. The psub(T)/sup 2/-distributions can then be described by a single exponential in the whole kinematic region. The net effect on the shapes of the x-distributions of the pions due to diffraction, ..delta../sup + +//..delta../sup -/ and rho/sup 0/ production is rather small. The separate effects of these processes on the particle ratio ..pi../sup -//..pi../sup +/ is investigated. By excluding the diffraction and ..delta../sup + +//..delta../sup -/ production, the strength of the low-psub(T)/sup 2/ component of the psub(T)/sup 2/-distributions of the pions is reduced, but it seems that diffraction and resonance production cannot account for all of this low-psub(T)/sup 2/ enhancement.

  1. The effect of resonance production and diffraction on the inclusive spectra of pions and protons in 19 GeV/c pn interactions

    International Nuclear Information System (INIS)

    Bakken, V.; Breivik, F.O.; Jacobsen, T.

    1984-01-01

    Bubble chamber data on pn interactions at 19 GeV/c are used to investigate the effects of nucleon diffraction and resonance production on the inclusive x- and psub(T)sup(2)-distributions of protons and pions. The differential distributions of p, π - and distributions from the decay of the strong resonances Δsup(++)(1232) and Δ - (1232) and from rho 0 (770) are determined. The x-distributions of the protons in the two c.m. hemispheres become quite similar when the effect of diffraction and Δsup(++) is subtracted. The psub(T)sup(2)-distributions can then be described by a single exponential in the whole kinematic region. The net effect on the shape of the x-distributions of the pions due to diffraction, effect of these processes on the particle ratio π - /π + is investigated. By excluding the diffraction and Δsup(++)/Δ - production, the strength of the low-psub(T)sup(2) component of the psub(T)sup(2)-distributions of the pions is reduced, but it seems that diffraction and resonance production cannot account for all oft his low-psub(T)sup(2) enhancement

  2. [3H]PN200-110 and [3H]ryanodine binding and reconstitution of ion channel activity with skeletal muscle membranes

    International Nuclear Information System (INIS)

    Hamilton, S.L.; Alvarez, R.M.; Fill, M.; Hawkes, M.J.; Brush, K.L.; Schilling, W.P.; Stefani, E.

    1989-01-01

    Skeletal muscle membranes derived either from the tubular (T) network or from the sarcoplasmic reticulum (SR) were characterized with respect to the binding of the dihydropyridine, [ 3 H]PN200-110, and the alkaloid, [ 3 H]ryanodine; polypeptide composition; and ion channel activity. Conditions for optimizing the binding of these radioligands are discussed. A bilayer pulsing technique is described and is used to examine the channels present in these membranes. Fusion of T-tubule membranes into bilayers revealed the presence of chloride channels and dihydropyridine-sensitive calcium channels with three distinct conductances. The dihydropyridine-sensitive channels were further characterized with respect to their voltage dependence. Pulsing experiments indicated that two different populations of dihydropyridine-sensitive channels existed. Fusion of heavy SR vesicles revealed three different ion channels; the putative calcium release channel, a potassium channel, and a chloride channel. Thus, this fractionation procedure provides T-tubules and SR membranes which, with radioligand binding and single channel recording techniques, provide a useful tool to study the characteristics of skeletal muscle ion channels and their possible role in excitation-contraction coupling

  3. Electron-beam-induced current measurements with applied bias provide insight to locally resolved acceptor concentrations at p-n junctions

    Directory of Open Access Journals (Sweden)

    D. Abou-Ras

    2015-07-01

    Full Text Available Electron-beam-induced current (EBIC measurements have been employed for the investigation of the local electrical properties existing at various types of electrical junctions during the past decades. In the standard configuration, the device under investigation is analyzed under short-circuit conditions. Further insight into the function of the electrical junction can be obtained when applying a bias voltage. The present work gives insight into how EBIC measurements at applied bias can be conducted at the submicrometer level, at the example of CuInSe2 solar cells. From the EBIC profiles acquired across ZnO/CdS/CuInSe2/Mo stacks exhibiting p-n junctions with different net doping densities in the CuInSe2 layers, values for the width of the space-charge region, w, were extracted. For all net doping densities, these values decreased with increasing applied voltage. Assuming a linear relationship between w2 and the applied voltage, the resulting net doping densities agreed well with the ones obtained by means of capacitance-voltage measurements.

  4. A new method for polychromatic X-ray μLaue diffraction on a Cu pillar using an energy-dispersive pn-junction charge-coupled device

    Energy Technology Data Exchange (ETDEWEB)

    Abboud, A.; Send, S.; Pashniak, N.; Pietsch, U. [Department of Physics, University of Siegen, Siegen 57072 (Germany); Kirchlechner, C. [Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf 40237 (Germany); Montanuniversität Leoben, Leoben 8700 (Austria); Micha, J. S.; Ulrich, O. [CEA-Grenoble/DRFMC/SprAM, 17 rue des Martyrs, Grenoble Cedex 9, F-38054 (France); Strüder, L. [PNSensor GmbH, Munich 80803 (Germany); Keckes, J. [Montanuniversität Leoben, Leoben 8700 (Austria); Material Center Leoben Forschungs GmbH, Leoben 8700 (Austria)

    2014-11-15

    μLaue diffraction with a polychromatic X-ray beam can be used to measure strain fields and crystal orientations of micro crystals. The hydrostatic strain tensor can be obtained once the energy profile of the reflections is measured. However, this remains a challenge both on the time scale and reproducibility of the beam position on the sample. In this review, we present a new approach to obtain the spatial and energy profiles of Laue spots by using a pn-junction charge-coupled device, an energy-dispersive area detector providing 3D resolution of incident X-rays. The morphology and energetic structure of various Bragg peaks from a single crystalline Cu micro-cantilever used as a test system were simultaneously acquired. The method facilitates the determination of the Laue spots’ energy spectra without filtering the white X-ray beam. The synchrotron experiment was performed at the BM32 beamline of ESRF using polychromatic X-rays in the energy range between 5 and 25 keV and a beam size of 0.5 μm × 0.5 μm. The feasibility test on the well known system demonstrates the capabilities of the approach and introduces the “3D detector method” as a promising tool for material investigations to separate bending and strain for technical materials.

  5. Total (p,n) and (α,n) cross sections for nucleosynthesis and nuclear applications. Project report, 1 June 1980-28 February 1981

    International Nuclear Information System (INIS)

    Gabbard, F.; Hershberger, R.L.

    1981-01-01

    The work proposed for the two-year program has as its objective (1) measurement of selected total (p,n) and (α,n) reaction cross sections using a 4π neutron counter; (2) calculation of stellar reaction rates for the reactions measured and, when feasible, for the inverse reactions and comparison with model calculations of the cross sections; and (3) comparison of the measured cross sections with computed values using global optical potentials for the purpose of studying the systematics of the potentials as a function of atomic mass number, A, and the energy of the bombarding particle. An important part of the work is to study the systematics of the imaginary part of the potentials, W. The elements selected for study during the two-year period were 51 V, 54 Cr, 61 Ni, 64 Ni, 65 Cu, 67 Zn, 68 Zn, and 75 As. During the first nine month period (1 June 1980-28 February 1981) of the project, work has been done on 51 V, /sup Nat/Ni, /sup Nat/Zn, /sup Nat/Cu and 75 As. Progress is reported

  6. Synthesis and characterization of heterobimetallic complexes of the type [Cu(pn2][MCl4] where M = Co(II, Ni(II, Cu(II, Zn(II, Cd(II, and Hg(II

    Directory of Open Access Journals (Sweden)

    Seema Yadav

    2016-11-01

    Full Text Available A series of new bimetallic transition metal complexes of the type [Cu(pn2] [MCl4] have been synthesized (where M = Co(II, Ni(II, Cu(II, Zn(II, Cd(II and Hg(II, pn = 1,3-diaminopropane and characterized by elemental analysis, molar conductance, TGA, IR and electronic spectra. All the compounds are 1:1 electrolyte in DMF. The Cu(II ion is square-planar while metal ions in the anionic moiety acquire their usual tetrahedral arrangement. On the basis of these studies it is concluded that anionic moiety is electrically stabilized by its cationic counterpart.

  7. Systematics of proton absorption deduced from ( p,p) and ( p,n) cross sectionsfor 2.0- to 6.7-MeV protons on /sup 107,109/Ag and 115In

    International Nuclear Information System (INIS)

    Hershberger, R.L.; Flynn, D.S.; Gabbard, F.; Johnson, C.H.

    1980-01-01

    The ( p,p) and ( p,n) cross sections were measured to accuracies of +- 2% and +- 3%, respectively, for 2.0- to 6.7-MeV protons on /sup 107,109/Ag and 115 In. Hauser-Feshbach calculations, which included γ-ray emission channels, were used to convert the ( p,n) cross sections to proton absorption cross sections. Analysis of the ( p,p) and deduced proton absorption cross sections were made simultaneously using a conventional optical-model potential. The measured cross sections can be described using parameters extrapolated from the Sn region in a systematic way, except for a large increase required for the depth of the absorptive potential

  8. Study of short-range correlation in nuclei via measurement of the 4He(,ee'pp) and 4He(e,e'pn) reaction

    Energy Technology Data Exchange (ETDEWEB)

    Korover, Igor [Tel Aviv Univ., Ramat Aviv (Israel)

    2015-04-01

    This thesis reports on a simultaneous measurement of the 4He(e,e'p), 4He(e,e'pp), and 4He(e,e'pn) reactions at Q2 = 2 (GeV/c)2 and xB > 1 for an (e,e'p) missing momentum range of 400 to 830 MeV/c.

  9. Defining Usability of PN Services

    DEFF Research Database (Denmark)

    Nicolajsen, Hanne Westh; Ahola, Titta; Fleury, Alexandre

    In this deliverable usability and user experience are defined in relation to MAGNET Beyond technologies, and it is described how the main MAGNET Beyond concepts can be evaluated through the involvement of users. The concepts include the new "Activity based communication approach" for interacting...... with the MAGNET Beyond system, as well as the core concepts: Personal Network, Personal Network-Federation, Service Discovery, User Profile Management, Personal Network Management, Privacy and Security and Context Awareness. The overall plans for the final usability evaluation are documented based on the present...

  10. Minimum entropy principle-based solar cell operation without a pn-junction and a thin CdS layer to extract the holes from the emitter

    Science.gov (United States)

    Böer, Karl W.

    2016-10-01

    The solar cell does not use a pn-junction to separate electrons from holes, but uses an undoped CdS layer that is p-type inverted when attached to a p-type collector and collects the holes while rejecting the backflow of electrons and thereby prevents junction leakage. The operation of the solar cell is determined by the minimum entropy principle of the cell and its external circuit that determines the electrochemical potential, i.e., the Fermi-level of the base electrode to the operating (maximum power point) voltage. It leaves the Fermi level of the metal electrode of the CdS unchanged, since CdS does not participate in the photo-emf. All photoelectric actions are generated by the holes excited from the light that causes the shift of the quasi-Fermi levels in the generator and supports the diffusion current in operating conditions. It is responsible for the measured solar maximum power current. The open circuit voltage (Voc) can approach its theoretical limit of the band gap of the collector at 0 K and the cell increases the efficiency at AM1 to 21% for a thin-film CdS/CdTe that is given as an example here. However, a series resistance of the CdS forces a limitation of its thickness to preferably below 200 Å to avoid unnecessary reduction in efficiency or Voc. The operation of the CdS solar cell does not involve heated carriers. It is initiated by the field at the CdS/CdTe interface that exceeds 20 kV/cm that is sufficient to cause extraction of holes by the CdS that is inverted to become p-type. Here a strong doubly charged intrinsic donor can cause a negative differential conductivity that switches-on a high-field domain that is stabilized by the minimum entropy principle and permits an efficient transport of the holes from the CdTe to the base electrode. Experimental results of the band model of CdS/CdTe solar cells are given and show that the conduction bands are connected in the dark, where the electron current must be continuous, and the valence bands are

  11. Preparation of 64Cu based on nuclear reaction of 64Ni (p,n) 64Cu: Simulations of target preparation and radionuclidic separation

    International Nuclear Information System (INIS)

    Sunarhadijoso Soenarjo; Wira Y Rahman; Sriyono; Triyanto

    2010-01-01

    As a preliminary study for production technology of 64 Cu based on nuclear reaction of 64 Ni (p,n) 64 Cu, the nickel targets were prepared by electroplating method using acidic solution of nickel chloride - boric acid and basic solution of nickel sulphate - nickel chloride mixtures on a silver-surfaced target holder. The simulated solution of Ni(II) - Cu(II) matrix was considered as the solution of post-proton-irradiated nickel containing radioactive copper. In the presented work the irradiation of nickel target was omitted, while the radioactive copper was obtained from neutron irradiation of CuO target. The separation of radioactive copper was based on anion exchange column chromatography in which the radiocopper was conditioned to form CuCl 4 2- anion complex, while the nickel was kept as Ni 2+ cation. It was found that the electroplating deposit from the acidic solution was better than that form the basic solution. By conditioning the matrix solution in 6 M HCl, the radioactive copper was indicated in the forms of Cu 2+ and CuCl 4 2- while the nickel was in the form of Ni 2+ . In the condition of 9 M HCl, the radioactive copper was in the form of CuCl 4 2- , while the nickel was found as both Ni 2+ and CuCl 4 2- . The best condition of separation was in 8 M HCl in which the radioactive copper was in the form of CuCl 4 2- , while the nickel was in the form of Ni 2+ . The retained CuCl 4 2- was then changed back into Cu 2+ cation and eluted out from the column by using 0.05 M HCl. The γ-spectrometric analysis showed a single strong peak at 511 keV in accordance to γ-annihilation peak coming from positron decay of 64 Cu, and a very weak peak at 1346 keV related to γ-ray from internal energy transition of 64 Cu. (author)

  12. Fabrication of a Co(OH)2/ZnCr LDH "p-n" Heterojunction Photocatalyst with Enhanced Separation of Charge Carriers for Efficient Visible-Light-Driven H2 and O2 Evolution.

    Science.gov (United States)

    Sahoo, Dipti Prava; Nayak, Susanginee; Reddy, K Hemalata; Martha, Satyabadi; Parida, Kulamani

    2018-04-02

    Photocatalytic generation of H 2 and O 2 by water splitting remains a great challenge for clean and sustainable energy. Taking into the consideration promising heterojunction photocatalysts, analogous energy issues have been mitigated to a meaningful extent. Herein, we have architectured a highly efficient bifunctional heterojunction material, i.e., p-type Co(OH) 2 platelets with an n-type ZnCr layered double hydroxide (LDH) by an ultrasonication method. Primarily, the Mott-Schottky measurements confirmed the n- and p-type semiconductive properties of LDH and CH material, respectively, with the construction of a p-n heterojunction. The high resolution transmission electron microscopy results suggest that surface modification of ZnCr LDH by Co(OH) 2 hexagonal platelets could form a fabulous p-n interfacial region that significantly decreases the energy barrier for O 2 and H 2 production by effectively separating and transporting photoinduced charge carriers, leading to enhanced photoreactivity. A deep investigation into the mechanism shows that a 30 wt % Co(OH) 2 -modified ZnCr LDH sample liberates maximum H 2 and O 2 production in 2 h, i.e., 1115 and 560 μmol, with apparent conversion efficiencies of H 2 and O 2 evolution of 13.12% and 6.25%, respectively. Remarkable photocatalytic activity with energetic charge pair transfer capability was illustrated by electrochemical impedance spectroscopy, linear sweep voltammetry, and photoluminescence spectra. The present study clearly suggests that low-cost Co(OH) 2 platelets are the most crucial semiconductors to provide a new p-n heterojunction photocatalyst for photocatalytic H 2 and O 2 production on the platform of ZnCr LDH.

  13. SLC52A2 [p.P141T] and SLC52A3 [p.N21S] causing Brown-Vialetto-Van Laere Syndrome in an Indian patient: First genetically proven case with mutations in two riboflavin transporters.

    Science.gov (United States)

    Udhayabanu, Tamilarasan; Subramanian, Veedamali S; Teafatiller, Trevor; Gowda, Vykuntaraju K; Raghavan, Varun S; Varalakshmi, Perumal; Said, Hamid M; Ashokkumar, Balasubramaniem

    2016-11-01

    Brown-Vialetto-Van Laere Syndrome (BVVLS), a rare neurological disorder characterized by bulbar palsies and sensorineural deafness, is mainly associated with defective riboflavin transporters encoded by the SLC52A2 and SLC52A3 genes. Here we present a 16-year-old BVVLS patient belonging to a five generation consanguineous family from Indian ethnicity with two homozygous missense mutations viz., c.421C>A [p.P141T] in SLC52A2 and c.62A>G [p.N21S] in SLC52A3. Functional characterization based on 3 H-riboflavin uptake assay and live-cell confocal imaging revealed that the effect of mutation c.421C>A [p.P141T] identified in SLC52A2 had a slight reduction in riboflavin uptake; on the other hand, the c.62A>G [p.N21S] identified in SLC52A3 showed a drastic reduction in riboflavin uptake, which appeared to be due to impaired trafficking and membrane targeting of the hRFVT-3 protein. This is the first report presenting mutations in both riboflavin transporters hRFVT-2 and hRFVT-3 in the same BVVLS patient. Also, c.62A>G [p.N21S] in SLC52A3 appears to contribute more to the disease phenotype in this patient than c.421C>A [p.P141T] in SLC52A2. Copyright © 2016 Elsevier B.V. All rights reserved.

  14. NOx, NH3, N2O and PN real driving emissions from a Euro VI heavy-duty vehicle. Impact of regulatory on-road test conditions on emissions.

    Science.gov (United States)

    Mendoza-Villafuerte, Pablo; Suarez-Bertoa, Ricardo; Giechaskiel, Barouch; Riccobono, Francesco; Bulgheroni, Claudia; Astorga, Covadonga; Perujo, Adolfo

    2017-12-31

    Euro VI emission standards for heavy-duty vehicles (HDVs) introduced for the first time limits for solid particle number (PN) and NH 3 emissions. EU regulation also includes a Portable Emissions Measurement System (PEMS) based test at type approval, followed by in-service conformity (ISC) testing. A comprehensive study on the real-time on-road emissions of NO x , NH 3 , N 2 O and PN from a Euro VI HDV equipped with a Diesel Oxidation Catalyst (DOC), a Diesel Particle Filter (DPF), a Selective Catalytic Reduction (SCR) system and an Ammonia Oxidation Catalyst (AMOX) is presented. Our analyses revealed that up to 85% of the NO x emissions measured during the tests performed are not taken into consideration if the boundary conditions for data exclusion set in the current legislation are applied. Moreover, it was found that the highest NO x emissions were measured during urban operation. Analyses show that a large fraction urban of operation is not considered when 20% power threshold as boundary condition is applied. They also show that cold start emissions account for a large fraction of the total NO x emitted. Low emissions of PN (2.8×10 10 to 6.5×10 10 #/kWh) and NH 3 (1.0 to 2.2ppm) were obtained during the on-road tests, suggesting effectiveness of the vehicle's after-treatment (DPF and AMOX). Finally, a comparison between speed-based (as currently defined by Euro VI legislation) and land-use-based (using Geographic Information System (GIS)) calculation of shares of operation was performed. Results suggest that using GIS to categorize the shares of operation could result in different interpretations depending on the criteria adopted for their definition. Copyright © 2017 The Authors. Published by Elsevier B.V. All rights reserved.

  15. Integrated Advanced Microwave Sounding Unit-A (AMSU-A). Performance Verification Report: Initial Comprehensive Performance Test Report, P/N 1331200-2-IT, S/N 105/A2

    Science.gov (United States)

    Platt, R.

    1999-01-01

    This is the Performance Verification Report, Initial Comprehensive Performance Test Report, P/N 1331200-2-IT, S/N 105/A2, for the Integrated Advanced Microwave Sounding Unit-A (AMSU-A). The specification establishes the requirements for the Comprehensive Performance Test (CPT) and Limited Performance Test (LPT) of the Advanced Microwave Sounding, Unit-A2 (AMSU-A2), referred to herein as the unit. The unit is defined on Drawing 1331200. 1.2 Test procedure sequence. The sequence in which the several phases of this test procedure shall take place is shown in Figure 1, but the sequence can be in any order.

  16. Formation of definite GaN p-n junction by Mg-ion implantation to n--GaN epitaxial layers grown on a high-quality free-standing GaN substrate

    Science.gov (United States)

    Oikawa, Takuya; Saijo, Yusuke; Kato, Shigeki; Mishima, Tomoyoshi; Nakamura, Tohru

    2015-12-01

    P-type conversion of n--GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor-acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time.

  17. Synthesis and structure of the extended phosphazane ligand [(1,4-C6H4){N(μ-PN(t)Bu)2N(t)Bu}2](4).

    Science.gov (United States)

    Sevilla, Raquel; Less, Robert J; García-Rodríguez, Raúl; Bond, Andrew D; Wright, Dominic S

    2016-02-07

    The reaction of the phenylene-bridged precursor (1,4-C6H4)[N(PCl2)2]2 with (t)BuNH2 in the presence of Et3N gives the new ligand precursor (1,4-C6H4)[N(μ-N(t)Bu)2(PNH(t)Bu)2]2, deprotonation of which with Bu2Mg gives the novel tetraanion [(1,4-C6H4){N(μ-N(t)Bu)2(PN(t)Bu)2}2](4-).

  18. Studi d'idoneità ambientale su grande scala a fini conservazionistici: il caso del Capriolo italico nel P.N. del Pollino

    Directory of Open Access Journals (Sweden)

    Alessandro Massolo

    2003-10-01

    formulati hanno dato risultati soddisfacenti (> 70% di classificazioni corrette, ma alla verifica sui dati del PN del Pollino, solo il modello formulato con la regressione logistica e gli indici di paesaggio come variabili predittive, ha mostrato una potente capacità predittiva (89% degli avvistamenti e dei dati di presenza/assenza, classificando come idoneo per la specie circa il 59% del territorio del Parco. Il nostro studio suggerisce che vi sono casi in cui, nonostante le difficoltà insite nell?applicazione di un modello in aree differenti (soprattutto in termini di orografia e vegetazione da quella di origine dei dati, le caratteristiche di complessità e frammentazione del territorio a grande scala permettono la formulazione di un modello adeguato e potente. Infine, riteniamo che, senza un?adeguata valutazione su dati provenienti dall?area d?applicazione, le predizioni dei modelli possano dare risultati non coerenti con la distribuzione reale della popolazione in esame, suggerendo cautela nelle previsioni in aree in cui la specie sia assente.

  19. Study of recombination processes for 'electron-hole' pairs in germanium irradiated by {gamma} rays from {sup 60}Co using the photovoltaic effect in P-N junctions; Etude du processus de recombinaison des paires ''electron-trou'' dans le germanium irradie par les rayons {gamma} du cobalt 60 a l'aide de l'effet photovoltaique dans les jonctions P-N

    Energy Technology Data Exchange (ETDEWEB)

    Zahedi-Mochadam, A A [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1964-10-01

    Using the photo-voltaic effect in p-n junctions, we have studied, during bombardment, the mechanism of the recombination of 'electron-hole' pairs in the presence of structure defects produced in germanium of the N and P types by {gamma} rays from a Co{sup 60} source. At 310 K the level of the recombination centres is situated 0.25 eV above the conduction band and the capture cross-sections of the holes and of the electrons have the respective values of: {sigma}{sub p} = 4 X 10{sup -15} cm{sup 2} and {sigma}{sub n} = 3 X 10{sup -15} cm{sup 2}. The value of {sigma}{sub n} appears to be under-estimated because the number of defects in P-type samples appears to be lower than that in N-type samples. These results lead to the conclusion that the interstitials are responsible for the recombination. At 80 K it has been found that in N-type samples, a shallow level exists at O.05 eV below the conduction band with a capture cross-section for the holes of {sigma}{sub p} {>=} 10{sup -14} cm{sup 2}. We believe that in this case the recombination of charge carriers is controlled by the neighbouring 'defect-interstitial' pairs. In P-type samples at low temperature, the life-time is practically constant during irradiation. This fact is attributed to a spontaneous annealing of defects ol purely electrical origin. In the last part of the work the study of the photo-voltaic effect applied to the problem of gamma radiation dosimetry is considered. It is shown that such dosimeters, based on this principle, make it possible to measure the intensity of gamma rays over a very wide range. (author) [French] En utilisant l'effet photovoltaique dans les jonctions p-n, nous avons etudie au cours du bombardement le mecanisme de recombinaison des paires 'electron-trou' en presence des defauts de structure introduits dans le germanium de type N et de type P par les rayons gamma d'une source de Co{sup 60}. A 310 K, le niveau des centres de recombinaison se trouve a 0,25 eV au-dessous de la bande

  20. Effectiveness of postoperative radiotherapy in patients with small oral and oropharyngeal squamous cell carcinoma and concomitant ipsilateral singular cervical lymph node metastasis (pN1). A meta-analysis

    International Nuclear Information System (INIS)

    Moergel, Maximilian; Meurer, Philipp; Al-Nawas, Bilal; Wendt, Thomas G.

    2011-01-01

    The positive effect of radiation therapy for patients with advanced oropharyngeal squamous cell carcinoma (OSCC) has been substantially verified. The present work investigated whether a meta-analysis of current data is able to evaluate the effectiveness of postoperative radiotherapy (PORT) in patients with small OSCC (pT1, pT2) and a single ipsilateral lymph node metastasis (pN1). The meta-analysis comprises randomized and non-randomized studies. High-risk tumors were excluded and defined by size ≥ pT3/pT4, lymph node involvement ≥ pN2, or presence of additional histological risk factors, e.g., involved positive resection margins, extra nodal spread of the disease, or lymphangiosis carcinomatosa. The primary outcome analyzed mortality between the different treatment arms. Only one prospective randomized clinical trial and six retrospective observational studies were adequate for evaluation. Descriptive analysis revealed a marginally higher mortality in the irradiation group (44% vs. 34%). In contrast, a forest plot presentation of two of seven studies with and without events in the control and therapy arms presented an advantage for the irradiation group with the limitation of large heterogeneity and a lack of statistical significance. Present data are poor and exhibit limited internal and external validity; thus, direct comparison was not possible with the eligible studies. Therefore, a meta-analysis of present data may not serve as the basis for a general treatment recommendation but underlines the need of prospective, randomized, controlled clinical trials. (orig.)

  1. Measurement of cross-sections for the 93Nb(p,n)93mMo and 93Nb(p,pn)92mNb reactions up to ∼20 MeV energy

    Science.gov (United States)

    Lawriniang, B.; Ghosh, R.; Badwar, S.; Vansola, V.; Santhi Sheela, Y.; Suryanarayana, S. V.; Naik, H.; Naik, Y. P.; Jyrwa, B.

    2018-05-01

    Excitation functions of the 93Nb(p,n)93mMo and 93Nb(p,pn)92mNb reactions were measured from threshold energies to ∼ 20MeV by employing stacked foil activation technique in combination with the off-line γ-ray spectroscopy at the BARC-TIFR Pelletron facility, Mumbai. For the 20 MeV proton beam, the energy degradation along the stack was calculated using the computer code SRIM 2013. The proton beam intensity was determined via the natCu(p,x)62Zn monitor reaction. The experimental data obtained were compared with the theoretical results from TALYS-1.8 as well as with the literature data available in EXFOR. It was found that for the 93Nb(p,n)92mMo reaction, the present data are in close agreement with some of the recent literature data and the theoretical values based on TALYS-1.8 but are lower than the other literature data. In the case of 93Nb(p,pn)93mNb reaction, present data agree very well with the literature data and the theoretical values.

  2. High efficient photocatalytic activity from nanostructuralized photonic crystal-like p-n coaxial hetero-junction film photocatalyst of Cu3SnS4/TiO2 nanotube arrays

    Science.gov (United States)

    Li, Yan; Liu, Fang-Ting; Chang, Yin; Wang, Jian; Wang, Cheng-Wei

    2017-12-01

    Structuring the materials in the form of photonic crystals is a new strategy for photocatalytic applications. Herein, a new concept of photonic crystal-induced p-n coaxial heterojunction film photocatalyst of Cu3SnS4/TiO2 (CTS/PhC-TNAs) was well-designed and successfully fabricated by combining periodic pulse anodic oxidation and in-situ self-assembling methods Such nanostructured CTS/PhC-TNAs exhibited significantly improved photocatalytic degradation activity under simulated sunlight irradiation with methyl orange (MO) as the target pollutants. Within 120 min, 82% of the MO (10 mg/L) was photodegraded and its kinetic constant per specific surface area reached 0.05332 μmol/m2h, which is 1.6 and 12.8 times more quickly than that of PhC-TNAs and CTS, respectively. Its significantly enhanced photocatalytic activity could be mainly attributed to a joint effect of the unique photonic crystal property of PhC-TNAs and the nanostructured hollow p-n coaxial hetero-junction, which result in an increased efficiency of charge separation and transfer and also an improved spectral response capability. This photonic crystal film photocatalyst has the potential for enhancing the photocatalytic activity via further optimizing the photonic stop band of PhC-TNAs. The study presents a new means to design the kind of photonic crystal structural-induced novel photocatalysts with high photocatalytic activities in pollution treatment.

  3. A new spectroscopic imager for X-rays from 0.5 keV to 150 keV combining a pnCCD and a columnar CsI(Tl) scintillator

    Science.gov (United States)

    Schlosser, D. M.; Hartmann, R.; Kalok, D.; Bechteler, A.; Abboud, A.; Shokr, M.; Çonka, T.; Pietsch, U.; Strüder, L.

    2017-04-01

    By combining a low noise fully depleted pnCCD detector with a columnar CsI(Tl) scintillator an energy dispersive spatial resolving detector can be realized with a high quantum efficiency in the range from below 0.5 keV to above 150 keV. The used scintillator system increases the pulse height of gamma-rays converted in the CsI(Tl), due to focusing properties of the columnar scintillator structure by reducing the event size in indirect detection mode (conversion in the scintillator). In case of direct detection (conversion in the silicon of the pnCCD) the relative energy resolution is 0.7% at 122 keV (FWHM = 850 eV) and the spatial resolution is less than 75 μm. In case of indirect detection the relative energy resolution, integrated over all event sizes is about 9% at 122 keV with an expected spatial precision of below 75 μm.

  4. Cutaneous sporotrichosis: Unusual clinical presentations

    Directory of Open Access Journals (Sweden)

    Mahajan Vikram

    2010-01-01

    Full Text Available Three unusual clinical forms of sporotrichosis described in this paper will be a primer for the clinicians for an early diagnosis and treatment, especially in its unusual presentations. Case 1, a 52-year-old man, developed sporotrichosis over pre-existing facial nodulo-ulcerative basal cell carcinoma of seven-year duration, due to its contamination perhaps from topical herbal pastes and lymphocutaneous sporotrichosis over right hand/forearm from facial lesion/herbal paste. Case 2, a 25-year-old woman, presented with disseminated systemic-cutaneous, osteoarticular and possibly pleural (effusion sporotrichosis. There was no laboratory evidence of tuberculosis and treatment with anti-tuberculosis drugs (ATT did not benefit. Both these cases were diagnosed by histopathology/culture of S. schenckii from tissue specimens. Case 3, a 20-year-old girl, had multiple intensely pruritic, nodular lesions over/around left knee of two-year duration. She was diagnosed clinically as a case of prurigo nodularis and histologically as cutaneous tuberculosis, albeit, other laboratory investigations and treatment with ATT did not support the diagnosis. All the three patients responded well to saturated solution of potassium iodide (SSKI therapy. A high clinical suspicion is important in early diagnosis and treatment to prevent chronicity and morbidity in these patients. SSKI is fairly safe and effective when itraconazole is not affordable/ available.

  5. Chronic Pruritus in the Absence of Skin Disease: Pathophysiology, Diagnosis and Treatment.

    Science.gov (United States)

    Pereira, Manuel P; Kremer, Andreas E; Mettang, Thomas; Ständer, Sonja

    2016-08-01

    Chronic pruritus arises not only from dermatoses, but also, in up to half of cases, from extracutaneous origins. A multitude of systemic, neurological, psychiatric, and somatoform conditions are associated with pruritus in the absence of skin disease. Moreover, pruritus is a frequently observed side effect of many drugs. It is therefore difficult for physicians to make a correct diagnosis. Chronic pruritus patients frequently present to the dermatologist with skin lesions secondary to a long-lasting scratching behavior, such as lichenification and prurigo nodularis. A structured clinical history and physical examination are essential in order to evaluate the pruritus, along with systematic, medical history-adapted laboratory and radiological tests carried out according to the differential diagnosis. For therapeutic reasons, a symptomatic therapy should be promptly initiated parallel to the diagnostic procedures. Once the underlying factor(s) leading to the pruritus are identified, a targeted therapy should be implemented. Importantly, the treatment of accompanying disorders such as sleep disturbances or mental symptoms should be taken into consideration. Even after successful treatment of the underlying cause, pruritus may persist, likely due to chronicity processes including peripheral and central sensitization or impaired inhibition at spinal level. A vast arsenal of topical and systemic agents targeting these pathophysiological mechanisms has been used to deter further chronicity. The therapeutic options currently available are, however, still insufficient for many patients. Thus, future studies aiming to unveil the complex mechanisms underlying chronic pruritus and develop new therapeutic agents are urgently needed.

  6. CLINICOPATHOLOGICAL STUDY OF PAPULOSQUAMOUS SKIN LESIONS

    Directory of Open Access Journals (Sweden)

    Chowdari Balaji

    2018-02-01

    Full Text Available BACKGROUND Papulosquamous lesions form the largest group of skin diseases. Since, they are all characterized by scaling papules or plaques, clinical confusion may result in their diagnosis, hence definitive histopathological analysis is important for their differentiation. MATERIALS AND METHODS The study includes skin biopsies from 108 clinically diagnosed /suspected non-infectious, erythematous, papulosquamous skin diseases which were received in the Department of Pathology, Andhra Medical College, Visakhapatnam for a period of two years from January 2016 to December 2017. The specimens obtained were subjected to formalin fixation and was subjected to routine processing and sections were stained with haematoxylin and eosin (H&E. The lesions were classified as Lichen Planus, Psoriasis, along with rare conditions like Pityriasis Rosea, Parapsoriasis, Pityriasis Rubra Pilaris, Prurigo Nodularis and Lichen Simplex chronicus and clinicopathological correlation was done. RESULTS A total of 108 cases were studied. Lichen planus (51 cases- 47.22% was the most common lesions followed by Psoriasis (34 cases - 31.48% and with majority of cases in the age group of 21 to 30 years (25 cases– 23.15%. Females were more commonly affected with a male to female ratio of 0.89:1. Out of 108 cases, clinicopathological correlation was seen in 68 cases (62.96%. CONCLUSION The importance of specific histopathological diagnosis lies in distinguishing these lesions into different entities as the treatment and prognosis varies widely and is disease-specific.

  7. M1 distributions for {sup 163}Dy and {sup 157}Gd in the SU{sup BF}{sub sdg}(3) and SU{sup BF}{sub sd}(3) x 1g limits of pn-sdgIBFM

    Energy Technology Data Exchange (ETDEWEB)

    Devi, Y.D. [Saha Inst. of Nuclear Physics, Calcutta (India); Kota, V.K.B. [Physical Research Laboratory, Ahmedabad 380 009 (India)

    1996-04-01

    The SU{sup BF}{sub sdg}(3) limit of pn-sdgIBFM, which was developed earlier, is applied with success in analyzing the recently observed M1 data in the {sup 163}Dy nucleus. As new experiments are being planned for {sup 157}Gd nucleus and that {sup 156}Gd is known to be a good SU{sub sd}(3) x 1g nucleus, in the second part of the paper a formalism for M1 distributions in the SU{sup BF}{sub sd}(3) x 1g limit is developed. In both these analytically solvable limiting situations, predictions are made for M1 distributions in the {sup 157}Gd nucleus. (orig.).

  8. Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111 substrates: a potential route to fabricate topological insulator p-n junction

    Directory of Open Access Journals (Sweden)

    Zhaoquan Zeng

    2013-07-01

    Full Text Available High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111 substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111 substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111 substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111 substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  9. The highly enhanced visible light photocatalytic degradation of gaseous o-dichlorobenzene through fabricating like-flowers BiPO{sub 4}/BiOBr p-n heterojunction composites

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Xuejun [Department of Environmental Science and Technology, Dalian Nationalities University, Dalian, 116600 (China); Dong, Yuying, E-mail: dongy@dlnu.edu.cn [Department of Environmental Science and Technology, Dalian Nationalities University, Dalian, 116600 (China); Zhang, Xiaodong, E-mail: fatzhxd@126.com [Environment and Low-Carbon Research Center, School of Environment and Architecture, University of Shanghai for Science and Technology, Shanghai, 200093 (China); Cui, Yubo; Ou, Xiaoxia [Department of Environmental Science and Technology, Dalian Nationalities University, Dalian, 116600 (China); Qi, Xiaohui [College of Life Science, Dalian Nationalities University, Dalian, 116600 (China)

    2017-01-01

    Highlights: • Like-flowers BiPO{sub 4}/BiOBr was fabricated by mixing in solvent method. • o-Dichlorobenzene removal efficiency was 53.6% using BiPO{sub 4}/BiOBr. • The p–n junction improved o-dichlorobenzene degradation activity. - Abstract: In this paper, in order to enhance photo-induced electron-hole pairs separation of BiOBr, flowers-like BiPO{sub 4}/BiOBr p-n heterojunction composites was fabricated by a mixing in solvent method. The as-prepared samples were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), UV–vis absorption spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), and N{sub 2} adsorption-desorption. Meanwhile, their photocatalytic properties were investigated by the degradation of gaseous o-dichlorobenzene under visible light irradiation. Due to its strong adsorption capacity and the formation of p-n heterojunction, compared with BiPO{sub 4} and BiOBr, the BiPO{sub 4}/BiOBr composites showed higher photocatalytic activity in the degradation of gaseous o-DCB under visible light. Among them, 2% BiPO{sub 4}/BiOBr showed the maximum value of the activity, whose degradation rate was about 2.6 times as great as the pure BiOBr. Furthermore, the OH· was confirmed the main active species during the photocatalytic process by the trapping experiments. The outstanding performance indicated that the photocatalysts could be applied to air purification for chlorinated volatile organic compound.

  10. Three-dimensional Ag2O/Bi5O7I p-n heterojunction photocatalyst harnessing UV-vis-NIR broad spectrum for photodegradation of organic pollutants.

    Science.gov (United States)

    Chen, Yannan; Zhu, Gangqiang; Hojamberdiev, Mirabbos; Gao, Jianzhi; Zhu, Runliang; Wang, Chenghui; Wei, Xiumei; Liu, Peng

    2018-02-15

    Ag 2 O nanoparticles-loaded Bi 5 O 7 I microspheres forming a three dimensional Ag 2 O/Bi 5 O 7 I p-n heterojunction photocatalyst with wide-spectrum response were synthesized in this study. The results of transmission electron microscopy observations revealed that the Ag 2 O nanoparticles with the diameter of ca. 10-20nm were distributed on the surfaces of Bi 5 O 7 I nanosheets. The as-synthesized Ag 2 O/Bi 5 O 7 I exhibited an excellent wide-spectrum response to wavelengths ranging from ultraviolet (UV) to near-infrared (NIR), indicating its potential for effective utilization of solar energy. Compared with pure Bi 5 O 7 I, the Ag 2 O/Bi 5 O 7 I composite also demonstrated excellent photocatalytic activity for the degradation of Bisphenol A and phenol in aqueous solution under visible LED light irradiation. Among samples, the 20% Ag 2 O/Bi 5 O 7 I composite photocatalyst showed the highest photocatalytic activity for the degradation of Bisphenol A and phenol in aqueous solution. In addition, the 20% Ag 2 O/Bi 5 O 7 I composite also exhibited a photocatalytic activity for the degradation of Bisphenol A under NIR light irradiation. The improved photocatalytic activity is attributed to the formation of a p-n heterojunction between Ag 2 O and Bi 5 O 7 I, allowing the efficient utilization of solar energy (from UV to NIR) and high separation efficiency of photogenerated electron-hole pairs. The present work is desirable to explore a possible avenue for the full utilization of solar energy. Copyright © 2017 Elsevier B.V. All rights reserved.

  11. A Au/Cu2O-TiO2 system for photo-catalytic hydrogen production. A pn-junction effect or a simple case of in situ reduction?

    KAUST Repository

    Sinatra, Lutfan

    2015-02-01

    Photo-catalytic H2 production from water has been studied over Au-Cu2O nanoparticle deposited on TiO2 (anatase) in order to probe into both the plasmon resonance effect (Au nanoparticles) and the pn-junction at the Cu2O-TiO2 interface. The Au-Cu2O composite is in the form of ∼10 nm Au nanoparticles grown on ∼475 nm Cu2O octahedral nanocrystals with (111) facets by partial galvanic replacement. X-ray Photoelectron Spectroscopy (XPS) Cu2p and Auger L3M4,5M4,5 lines indicate that the surface of Cu2O is mainly composed of Cu+. The rate for H2 production (from 95 water/5 ethylene glycol; vol.%) over 2 wt.% (Au/Cu2O)-TiO2 is found to be ∼10 times faster than that on 2 wt.% Au-TiO2 alone. Raman spectroscopy before and after reaction showed the disappearance of Cu+ lines (2Eu) at 220 cm-1. These observations coupled with the induction time observed for the reaction rate suggest that in situ reduction from Cu+ to Cu0 occurs upon photo-excitation. The reduction requires the presence of TiO2 (electron transfer). The prolonged activity of the reaction (with no signs of deactivation) despite the reduction to Cu0 indicates that the latter takes part in the reaction by providing additional sites for the reaction, most likely as recombination centers for hydrogen atoms to form molecular hydrogen. This phenomenon provides an additional route for enhancing the efficiency and lifetime of Cu2O-TiO2 photocatalytic systems, beyond the usually ascribed pn-junction effect.

  12. Measurement of the reaction {gamma}d {yields}pn{pi}{sup +}{pi}{sup -} at SAPHIR and investigation of the decay angular distribution of the {Delta}{sup ++}(1232) resonance; Messung der Reaktion {gamma}d {yields}pn{pi}{sup +}{pi}{sup -} an SAPHIR und Untersuchung der Zerfallswinkelverteilung der {Delta}{sup ++}(1232)-Resonanz

    Energy Technology Data Exchange (ETDEWEB)

    Schuetz, P.

    1993-03-01

    Messungen an fluessigem Deuterium und im Anschluss daran eine Analyse der Reaktion {gamma}d {yields} pn{pi}{sup +}{pi}{sup -} unter dem Aspekt der Zerfallswinkelverteilung der {Delta}{sup ++}(1232)-Resonanz. Zur Bestimmung der Detektorakzeptanz wurde eine modellabhaengige Simulationsrechnung mit dem Programm SAPHIR-GEANT durchgefuehrt. Das benutzte Modell basiert auf dem Zuschauermodell mit einem starken Einfluss des Kontaktgraphen {gamma}d {yields} n{sub s}{Delta}{sup ++}{pi}{sup -}. Die im Modell verwendete Winkelverteilung fuer den Zerfall der {Delta}-Resonanz ist in Anlehnung an aeltere Messungen am Proton mit W(cos{theta}) = 5 - 3 * cos{sup 2}{theta}) angenommen worden. Mit diesem Modell konnten die gemessenen Daten gut beschrieben werden. Unterschiede in der Zerfallswinkelverteilung zwischen den gemessenen und berechneten Daten unter dem Winkel {theta}{sup J} {approx} 90 sind moeglicherweise ein Indiz fuer Endzustandwechselwirkungen, die im reinen Zuschauermodell nicht beruecksichtigt werden.

  13. Spin-flip (p,n) reactions on 26Mg, 54Fe, and 56Fe at selected proton bombarding energies in the range of 17 to 25 MeV

    International Nuclear Information System (INIS)

    Aron, D.L.

    1985-06-01

    New data are presented for the 26 Mg(p,n) 26 Al reaction at E/sub p/ = 19.12 and 24.97 MeV, for the 54 Fe(p,n) 54 Co reaction at E/sub p/ = 17.20, 18.60, and 24.60 MeV, and for the 56 Fe(p,n) 56 Co reaction at E/sub p/ = 19.12 and 24.59 MeV. Data were taken with the LLNL Cyclograaff at 16 angles from 3.5 0 to 159.0 0 . A large detector at 23.8 0 with a long neutron flight path collected high resolution spectra. This large detector also collected separate 0 0 high resolution data on the 26 Mg and 56 Fe(p,n) reactions at E/sub p/ = 19 MeV. Absolute differential (p,n) cross sections were extracted for 1 + states in 26 Al, 54 Co, and 56 Co, for the 0 + isobaric analong state (IAS) in 54 Co and 56 Co, for a 2 + state in each residual nucleus, and for the 0.199 MeV 7 + state of 54 Co. No new experimental states were identified. Only relative cross sections were extracted at 0 0 . Experimental angle-integrated cross sections were obtained for all but one state. DWBA79 was used, with the G-matrix effective nucleon-nucleon interaction of Bertsch et al. (with the central triplet-odd component V/sub to/ = O) and the Livermore shell model wave functions to calculate differential (p,n) cross sections to 1 + states and to the 54 Co and 56 Co IAS. Normalization of the DWBA angle-integrated cross sections to measurements for the 54 Co and 56 Co IAS (at E/sub p/ = 24.6 MeV) yielded the renormalized V/sub tau/ = 21.4 +- 2.1 MeV. Normalization of the DWBA angle-integrated cross sections to measurements for the 24.6 MeV 54 Co and 56 Co 1 + states, coupled with the normalization of the wave functions to previously experimentally determined GT strength, yield the renormalized V/sub sigmatau/ = 12.3 +- 1.2 MeV. The experimental Gamow-Teller strength B(GT)/sub exp./ of the T = 1 26 Al state at 9.44 MeV was found to be 0.69; B(GT)/sub exp/ of the T = 1 26 Al state at 10.47 MeV was found to be 0.39

  14. Detailed characterization of MLH1 p.D41H and p.N710D variants coexisting in a Lynch syndrome family with conserved MLH1 expression tumors.

    Science.gov (United States)

    Pineda, M; González-Acosta, M; Thompson, B A; Sánchez, R; Gómez, C; Martínez-López, J; Perea, J; Caldés, T; Rodríguez, Y; Landolfi, S; Balmaña, J; Lázaro, C; Robles, L; Capellá, G; Rueda, D

    2015-06-01

    Lynch syndrome (LS) is an autosomal dominant cancer-susceptibility disease caused by inactivating germline mutations in mismatch repair (MMR) genes. Variants of unknown significance (VUS) are often detected in mutational analysis of MMR genes. Here we describe a large family fulfilling Amsterdam I criteria carrying two rare VUS in the MLH1 gene: c.121G > C (p.D41H) and c.2128A > G (p.N710D). Collection of clinico-pathological data, multifactorial analysis, in silico predictions, and functional analyses were used to elucidate the clinical significance of the identified MLH1 VUS. Only the c.121G > C variant cosegregated with LS-associated tumors in the family. Diagnosed colorectal tumors were microsatellite unstable although immunohistochemical staining revealed no loss of MMR proteins expression. Multifactorial likelihood analysis classified c.2128A > G as a non-pathogenic variant and c.121G > C as pathogenic. In vitro functional tests revealed impaired MMR activity and diminished expression of c.121G > C. Accordingly, the N710 residue is located in the unconserved MLH1 C-terminal domain, whereas D41 is highly conserved and located in the ATPase domain. The obtained results will enable adequate genetic counseling of c.121G > C and c.2128A > G variant carriers and their families. Furthermore, they exemplify how cumulative data and comprehensive analyses are mandatory to refine the classification of MMR variants. © 2014 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  15. The conversion of PN-junction influencing the piezoelectric output of a CuO/ZnO nanoarray nanogenerator and its application as a room-temperature self-powered active H₂S sensor.

    Science.gov (United States)

    Nie, Yuxin; Deng, Ping; Zhao, Yayu; Wang, Penglei; Xing, Lili; Zhang, Yan; Xue, Xinyu

    2014-07-04

    Room-temperature, high H2S sensing has been realized from a CuO/ZnO nanoarray self-powered, active gas sensor. The piezoelectric output of CuO/ZnO nanoarrays can act not only as the power source of the device, but also as the H2S sensing signal at room temperature. Upon exposure to 800 ppm H2S at room temperature, the piezoelectric output of the device greatly decreased from 0.738 V (in air) to 0.101 V. The sensitivity increased to 629.8, much higher than bare ZnO nanoarrays. As the device was exposed to H2S, a CuO/ZnO PN-junction was converted into a CuS/ZnO Ohmic contact, which greatly increased the electron density in the nanowire and enhanced the screen effect on the piezoelectric output. Our results can stimulate a research trend on designing new composite piezoelectric material for high-performance self-powered active gas sensors.

  16. Calcium antagonist binding sites in the rat brain: Quantitative autoradiographic mapping using the 1, 4-Dihydropyridines [3H]PN 200-110 and [3H]PY 108-068

    International Nuclear Information System (INIS)

    Cortes, R.; Supavilai, P.; Karobath, M.; Palacios, J.M.

    1984-01-01

    An in vitro autoradiographic technique has been used for the quantitative mapping of calcium antagonist binding sites (CABS) in the rat brain, using the 1, 4-dihydropyridines [ 3 H]PN 200-110 and [ 3 H]PY 108-068 as ligands. CABS were distributed throughout the brain in a highly heterogeneous fashion. The highest densities of CABS were observed in the olfactory bulb, hippocampus and parts of the amygdala. The neocortex was also rich in CABS. The basal ganglia, thalamus and hypothalamus presented intermediate levels of CABS while low densities of sites were seen in areas such as the cerebellum, pons and white matter tracts. The distributions of CABS in brain does not correlate with indexes of brain blood flow, regional glucose utilization or the distributions of receptor binding sites for drugs and neurotransmitters analyzed until now. No correlation exists between CABS distribution and that of any neurotransmitter or brain enzyme described so far. The heterogeneous distributions of CABS is suggestive of a neuronal localization, an idea supported by lesion experiments. (Author)

  17. Calcium antagonist binding sites in the rat brain: Quantitative autoradiographic mapping using the 1, 4-dihydropyridines (TH)PN 200-110 and (TH)PY 108-068

    Energy Technology Data Exchange (ETDEWEB)

    Cortes, R.; Supavilai, P.; Karobath, M.; Palacios, J.M.

    1984-01-01

    An in vitro autoradiographic technique has been used for the quantitative mapping of calcium antagonist binding sites (CABS) in the rat brain, using the 1, 4-dihydropyridines (TH)PN 200-110 and (TH)PY 108-068 as ligands. CABS were distributed throughout the brain in a highly heterogeneous fashion. The highest densities of CABS were observed in the olfactory bulb, hippocampus and parts of the amygdala. The neocortex was also rich in CABS. The basal ganglia, thalamus and hypothalamus presented intermediate levels of CABS while low densities of sites were seen in areas such as the cerebellum, pons and white matter tracts. The distributions of CABS in brain does not correlate with indexes of brain blood flow, regional glucose utilization or the distributions of receptor binding sites for drugs and neurotransmitters analyzed until now. No correlation exists between CABS distribution and that of any neurotransmitter or brain enzyme described so far. The heterogeneous distributions of CABS is suggestive of a neuronal localization, an idea supported by lesion experiments. (Author).

  18. Study of the quasi-free scattering at the reaction 2H(p,2p)n at Esub(p)0 = 14.1 MeV

    International Nuclear Information System (INIS)

    Helten, H.J.

    1980-01-01

    The breakup reaction 2 H(p,2p)n was studied at Ep = 14.1 MeV in complete coincidence experiments on quasifree pp scattering in a systematic range of cinematic situations of the pp-subsystem for c.m. production angles between 90 0 and 140 0 and different violation of the quasifree condition as well on interferences with final-state interaction processes. The absolute differential breakup cross section was compared with approximate solutions of the Faddeev equations with separable s-wave potentials without explicite Coulomb interaction according to Ebenhoeh. The agreement is generally good referring to the form of the spectra, but the theoretical amplitude is in the mean 20% to high. The permanent independence of the quasifree breakup from the scattering parameter asub(pp) doesn't suggest to use this process for the determination of nn-scattering lengths from the mirror reaction 2 H(n,2n)p. (orig.)

  19. 100-MeV proton beam intensity measurement by Au activation analysis using {sup 197}Au(p, pn){sup 196}Au and {sup 197}Au(p, p3n){sup 194}Au reactions

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari Oranj, Leila [Division of Advanced Nuclear Engineering, POSTECH, Pohang 37673 (Korea, Republic of); Jung, Nam-Suk; Oh, Joo-Hee [Pohang Accelerator Laboratory, POSTECH, Pohang 37673 (Korea, Republic of); Lee, Hee-Seock, E-mail: lee@postech.ac.kr [Pohang Accelerator Laboratory, POSTECH, Pohang 37673 (Korea, Republic of)

    2016-05-15

    The proton beam intensity of a 100-MeV proton linac at the Korea Multi-purpose Accelerator Complex (KOMAC) was measured by an Au activation analysis using {sup 197}Au(p, pn){sup 196}Au and {sup 197}Au(p, p3n){sup 194}Au reactions to determine the accuracy and precision of beam intensity measurement using Gafchromic film dosimetry method. The target, irradiated by 100-MeV protons, was arranged in a stack consisting of Au, Al foils and Pb plates. The yields of produced radio-nuclei in Au foils were obtained by gamma-ray spectroscopy. The FLUKA code was employed to calculate the energy spectrum of protons onto the front surface of Au foils located at three different depth points of the target and also to investigate the condition of incident beam on the target. A good agreement was found between the beam intensity measurements using the activation analysis method at three different depth points of the target. An excellent agreement was also observed between the beam intensity measurements using the Au activation analysis method and the dosimetry method using Gafchromic film.

  20. The ratio Rdp of the quasi-elastic nd → p(nn) to the elastic np → pn charge-exchange process yields at 0 deg over 0.55-2.0 GeV neutron beam energy region: 2. Comparison of the results with the model dependent calculations

    International Nuclear Information System (INIS)

    Sharov, V.I.; Morozov, A.A.; Shindin, R.A.; Chernykh, E.V.; Nomofilov, A.A.; Strunov, L.N.

    2008-01-01

    In our previous paper, the new experimental results on ratio R dp of the quasi-elastic charge-exchange yield at 0 Lab d eg for the nd → p + (nn) reaction to the elastic np → pn charge-exchange yield, were presented. The measurements were carried out at the Nuclotron of the Veksler and Baldin Laboratory of High Energies of the Joint Institute for Nuclear Research at the neutron beam kinetic energies of 0.55, 0.8, 1.0,1.2, 1.4, 1.8 and 2.0 GeV. In this paper, the comparison of these R dp data with the R dp calculations obtained within the impulse approximation by using the invariant amplitude sets from the GW/VPI phase-shift analysis, is made. The calculated R dp values with the set of invariant amplitude data for the elastic np → pn charge exchange at θ p,CM = 0 deg are in a good agreement with the experimental data. It has been confirmed that at θ p,CM = 0 deg the nd → pnn process is caused by the elastic np → pn charge-exchange reaction. Thus, it has been shown that the obtained experimental R dp results can be used for the Delta-Sigma experimental programme to reduce the total ambiguity in the extraction of the amplitude parts

  1. Large-format, high-speed, X-ray pnCCDs combined with electron and ion imaging spectrometers in a multipurpose chamber for experiments at 4th generation light sources

    International Nuclear Information System (INIS)

    Strueder, Lothar; Epp, Sascha; Rolles, Daniel; Hartmann, Robert; Holl, Peter; Lutz, Gerhard; Soltau, Heike; Eckart, Rouven; Reich, Christian; Heinzinger, Klaus; Thamm, Christian; Rudenko, Artem; Krasniqi, Faton; Kuehnel, Kai-Uwe; Bauer, Christian; Schroeter, Claus-Dieter; Moshammer, Robert; Techert, Simone; Miessner, Danilo; Porro, Matteo

    2010-01-01

    Fourth generation accelerator-based light sources, such as VUV and X-ray Free Electron Lasers (FEL), deliver ultra-brilliant (∼10 12 -10 13 photons per bunch) coherent radiation in femtosecond (∼10-100 fs) pulses and, thus, require novel focal plane instrumentation in order to fully exploit their unique capabilities. As an additional challenge for detection devices, existing (FLASH, Hamburg) and future FELs (LCLS, Menlo Park; SCSS, Hyogo and the European XFEL, Hamburg) cover a broad range of photon energies from the EUV to the X-ray regime with significantly different bandwidths and pulse structures reaching up to MHz micro-bunch repetition rates. Moreover, hundreds up to trillions of fragment particles, ions, electrons or scattered photons can emerge when a single light flash impinges on matter with intensities up to 10 22 W/cm 2 . In order to meet these challenges, the Max Planck Advanced Study Group (ASG) within the Center for Free Electron Laser Science (CFEL) has designed the CFEL-ASG MultiPurpose (CAMP) chamber. It is equipped with specially developed photon and charged particle detection devices dedicated to cover large solid-angles. A variety of different targets are supported, such as atomic, (aligned) molecular and cluster jets, particle injectors for bio-samples or fixed target arrangements. CAMP houses 4π solid-angle ion and electron momentum imaging spectrometers ('reaction microscope', REMI, or 'velocity map imaging', VMI) in a unique combination with novel, large-area, broadband (50 eV-25 keV), high-dynamic-range, single-photon-counting and imaging X-ray detectors based on the pnCCDs. This instrumentation allows a new class of coherent diffraction experiments in which both electron and ion emission from the target may be simultaneously monitored. This permits the investigation of dynamic processes in this new regime of ultra-intense, high-energy radiation-matter interaction. After an introduction into the salient features of the CAMP chamber and

  2. EKSEPSI PLURIUM LITIS CONSORTIUM (Studi Terhadap Putusan Pengadilan Tinggi Semarang No. 401/Pdt/2002/PT. Smg jo. Putusan Pengadilan Negeri Purwokerto No.41/Pdt.G/2000/PN.Pwt

    Directory of Open Access Journals (Sweden)

    Siti Muflichah

    2008-05-01

    Full Text Available In the civil jurisdiction, truth searched is the formal truth. This matter of course different from the criminal justice, where truth searched is material truth. Searching the formal truth, meaning that judge may not be abysmal of boundary that raised by the parties. This matter contain the congeniality, that verification process is not see at wight or content, but to wide of case scope or dispute that raised by the parties. In this case judge have the passive character. in civil jurisdiction, truth searched is a truth that relying on formal verification. The Judge decision shall contain the rule of law element, justice and benefit. For the reason judge have to careful, goodness in making draft of decision and also decision intake later. In Case No. 401/ Pdt / 2002 / PT. Smg, The Judge of High Court of middle of Java made the decision by strengthening decision of District Court of Purwokerto in case No. 41/Pdt.G/2000/PN Pwt. This Judge Decision represent an example of careless of the judge in make decision. exception of the lack of party had refused. Therefore, judge have to consider this matter in its decision. Therefore, judge have to consider this matter in its decision. This matter of course relative harm the plaintiff, because if suing is not accepted, plaintiff can improve/ repair its suing or make a lawsuit to the court newly again. But refusedly of suing make the plaintiff cannot improve/ repair its suing or make the new suing again. finally, the decision which is not careful will not fulfill the rule of law elements, justice and benefit.

  3. Androgen suppression plus radiation vs. radiation alone for patients with D1 (pN+) adenocarcinoma of the prostate (results based on a national prospective randomized trial RTOG 85-31)

    International Nuclear Information System (INIS)

    Lawton, Colleen A.; Pajak, Thomas F.; Byhardt, Roger; Sause, William T.; Hanks, Gerald E.; Russell, Anthony H.; Rotman, Marvin; Porter, Arthur; McGowan, David G.; DelRowe, John D.; Pilepich, Miljenko V.

    1996-01-01

    Purpose/Objective: To evaluate the effect of immediate androgen suppression in conjunction with standard external beam irradiation versus radiation alone on a group of pathologically staged lymph node positive patients with adenocarcinoma of the prostate. Methods and Materials: A national prospective randomized trial of standard external beam irradiation plus immediate androgen suppression vs. external beam irradiation alone was initiated in 1985 for patients with locally advanced adenocarcinoma of the prostate. One hundred seventy two of the patients in this trial had biopsy proven pathologically involved lymph nodes. Ninety Eight of these patients received radiation plus the immediate androgen suppression (LHRH agonist) while 74 received radiation alone with hormonal manipulation instituted at the time of relapse. Results: With a median followup of 3.9 years actuarial progression free survival at five years was 56% for the patients who received radiation plus immediate LHRH agonist versus 33% patients who received radiation alone with hormonal manipulation at relapse (p = .0009). Since all of these patients had locally advanced disease (i.e. pathologically positive lymph nodes) stage does not explain this difference in outcome and gleason grade was not statistically different between the two groups. Although not statistically different at this point both overall survival and cause specific survival favor radiation and immediate LHRH agonist. Actuarial overall survival at five years for the radiation and LHRH group was 69% versus 59% for the radiation alone group who received androgen suppression at relapse. Actuarial cause specific survival at five years was 84% for the radiation and immediate LHRH agonist group and 73% for the radiation alone group. Conclusion: Patients with adenocarcinoma of the prostate and pathologically involved pelvic lymph nodes (pN+ or clinical stage D 1 ) should be seriously considered for external beam irradiation plus immediate

  4. PODAAC-GHMTB-2PN02

    Data.gov (United States)

    National Aeronautics and Space Administration — A global Group for High Resolution Sea Surface Temperature (GHRSST) Level 2P dataset based on multi-channel sea surface temperature (SST) retrievals generated in...

  5. PODAAC-GHMTG-2PN02

    Data.gov (United States)

    National Aeronautics and Space Administration — A global Group for High Resolution Sea Surface Temperature (GHRSST) Level 2P dataset based on multi-channel sea surface temperature (SST) retrievals generated in...

  6. PODAAC-GHMTG-2PN01

    Data.gov (United States)

    National Aeronautics and Space Administration — A global Group for High Resolution Sea Surface Temperature (GHRSST) Level 2P dataset based on multi-channel sea surface temperature (SST) retrievals generated in...

  7. Organic p-n heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)

    2009-07-01

    For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.

  8. Multiplication in Silicon p-n Junctions

    DEFF Research Database (Denmark)

    Moll, John L.

    1965-01-01

    Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values i...

  9. Influence of electron storing, transferring and shuttling assets of reduced graphene oxide at the interfacial copper doped TiO2 p-n heterojunction for increased hydrogen production.

    Science.gov (United States)

    Babu, Sundaram Ganesh; Vinoth, Ramalingam; Kumar, Dharani Praveen; Shankar, Muthukonda V; Chou, Hung-Lung; Vinodgopal, Kizhanipuram; Neppolian, Bernaurdshaw

    2015-05-07

    Herein we report simple, low-cost and scalable preparation of reduced graphene oxide (rGO) supported surfactant-free Cu2O-TiO2 nanocomposite photocatalysts by an ultrasound assisted wet impregnation method. Unlike the conventional preparation techniques, simultaneous reduction of Cu(2+) (in the precursor) to Cu(+) (Cu2O), and graphene oxide (GO) to rGO is achieved by an ultrasonic method without the addition of any external reducing agent; this is ascertained by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses. UV-visible diffused reflectance spectroscopy (DRS) studies (Tauc plots) provide evidence for the loading of Cu2O tailoring the optical band gap of the photocatalyst from 3.21 eV to 2.87 eV. The photoreactivity of the as-prepared Cu2O-TiO2/rGO samples is determined via H2 evolution from water in the presence of glycerol as a hole (h(+)) scavenger under visible light irradiation. Very interestingly, the addition of rGO augments the carrier mobility at the Cu2O-TiO2 p-n heterojunction, which is evidenced by the significantly reduced luminescence intensity of the Cu2O-TiO2/rGO photocatalyst. Hence rGO astonishingly enhances the photocatalytic activity compared with pristine TiO2 nanoparticles (NPs) and Cu2O-TiO2, by factors of ∼14 and ∼7, respectively. A maximum H2 production rate of 110 968 μmol h(-1) gcat(-1) is obtained with a 1.0% Cu and 3.0% GO photocatalyst composition; this is significantly higher than previously reported graphene based photocatalysts. Additionally, the present H2 production rate is much higher than those of precious/noble metal (especially Pt) assisted (as co-catalysts) graphene based photocatalysts. Moreover, to the best of our knowledge, this is the highest H2 production rate (110 968 μmol h(-1) gcat(-1)) achieved by a graphene based photocatalyst through the splitting of water under visible light irradiation.

  10. Influence of electron storing, transferring and shuttling assets of reduced graphene oxide at the interfacial copper doped TiO2 p-n heterojunction for increased hydrogen production

    Science.gov (United States)

    Babu, Sundaram Ganesh; Vinoth, Ramalingam; Praveen Kumar, Dharani; Shankar, Muthukonda V.; Chou, Hung-Lung; Vinodgopal, Kizhanipuram; Neppolian, Bernaurdshaw

    2015-04-01

    Herein we report simple, low-cost and scalable preparation of reduced graphene oxide (rGO) supported surfactant-free Cu2O-TiO2 nanocomposite photocatalysts by an ultrasound assisted wet impregnation method. Unlike the conventional preparation techniques, simultaneous reduction of Cu2+ (in the precursor) to Cu+ (Cu2O), and graphene oxide (GO) to rGO is achieved by an ultrasonic method without the addition of any external reducing agent; this is ascertained by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses. UV-visible diffused reflectance spectroscopy (DRS) studies (Tauc plots) provide evidence for the loading of Cu2O tailoring the optical band gap of the photocatalyst from 3.21 eV to 2.87 eV. The photoreactivity of the as-prepared Cu2O-TiO2/rGO samples is determined via H2 evolution from water in the presence of glycerol as a hole (h+) scavenger under visible light irradiation. Very interestingly, the addition of rGO augments the carrier mobility at the Cu2O-TiO2 p-n heterojunction, which is evidenced by the significantly reduced luminescence intensity of the Cu2O-TiO2/rGO photocatalyst. Hence rGO astonishingly enhances the photocatalytic activity compared with pristine TiO2 nanoparticles (NPs) and Cu2O-TiO2, by factors of ~14 and ~7, respectively. A maximum H2 production rate of 110 968 μmol h-1 gcat-1 is obtained with a 1.0% Cu and 3.0% GO photocatalyst composition; this is significantly higher than previously reported graphene based photocatalysts. Additionally, the present H2 production rate is much higher than those of precious/noble metal (especially Pt) assisted (as co-catalysts) graphene based photocatalysts. Moreover, to the best of our knowledge, this is the highest H2 production rate (110 968 μmol h-1 gcat-1) achieved by a graphene based photocatalyst through the splitting of water under visible light irradiation.

  11. Final analysis of the prospective WSG-AGO EC-Doc versus FEC phase III trial in intermediate-risk (pN1) early breast cancer: efficacy and predictive value of Ki67 expression.

    Science.gov (United States)

    Nitz, U; Gluz, O; Huober, J; Kreipe, H H; Kates, R E; Hartmann, A; Erber, R; Moustafa, Z; Scholz, M; Lisboa, B; Mohrmann, S; Möbus, V; Augustin, D; Hoffmann, G; Weiss, E; Böhmer, S; Kreienberg, R; Du Bois, A; Sattler, D; Thomssen, C; Kiechle, M; Jänicke, F; Wallwiener, D; Harbeck, N; Kuhn, W

    2014-08-01

    Taxane-based adjuvant chemotherapy is standard in node-positive (N+) early breast cancer (BC). The magnitude of benefit in intermediate-risk N+ early BC is still unclear. WSG-AGO epiribicine and cyclophosphamide (EC)-Doc is a large trial evaluating modern taxane-based chemotherapy in patients with 1-3 positive lymph nodes (LNs) only. A total of 2011 BC patients (18-65 years, pN1) were entered into a randomized phase III trial comparing 4 × E90C600 q3w followed by 4 × docetaxel 100 q3w (n = 1008) with the current standard: 6 × F500E100C500 q3w (n = 828) or C600M40F600 d1, 8× q4w (n = 175). Primary end point was event-free survival (EFS); secondary end points were overall survival (OS), toxicity, translational research, and quality of life. Central tumor bank samples were evaluable in a representative collective (n = 772; 40%). Ki-67 was assessed centrally in hormone receptor-positive disease as a surrogate marker for the distinction of luminal A/B-like tumors. Baseline characteristics were well balanced between study arms in both main study and central tumor bank subset. At 59-month median follow-up, superior efficacy of EC-Doc [versus FEC (a combination of 5-fluorouracil, epirubicin, and cyclophosphamide)] was seen in EFS and OS: 5-year EFS: 89.8% versus 87.3% (P = 0.038); 5-year OS: 94.5% versus 92.8% (P = 0.034); both tests one-tailed. EC-Doc caused more toxicity. In hormone receptor-positive (HR)+ disease, only high-Ki-67 tumors (≥ 20%) derived significant benefit from taxane-based therapy: hazard ratio = 0.39 (95% CI 0.18-0.82) for EC-Doc versus FEC (test for interaction; P = 0.01). EC-Doc significantly improved EFS and OS versus FEC in intermediate-risk BC (1-3 LNs) within all subgroups as defined by local pathology. In HR+ disease, patients with luminal A-like tumors may be potentially over-treated by taxane-based chemotherapy. ClinicalTrials.gov, NCT02115204. © The Author 2014. Published by Oxford University Press on behalf of the European Society for

  12. Guidelenines in the management of obstructing cancer of the left colon: consensus conference of the world society of emergency surgery (WSES) and peritoneum and surgery (PnS) society

    Science.gov (United States)

    2010-01-01

    Background Obstructive left colon carcinoma (OLCC) is a challenging matter in terms of obstruction release as well of oncological issues. Several options are available and no guidelines are established. The paper aims to generate evidenced based recommendations on management of OLCC. Methods The PubMed and Cochrane Library databases were queried for publications focusing on OLCC published prior to April 2010. A extensive retrieval, analyses, and grading of the literature was undertaken. The findings of the research were presented and largely discussed among panellist and audience at the Consensus Conference of the World Society of Emergency Surgery (WSES) and Peritoneum and Surgery (PnS) Society held in Bologna July 2010. Comparisons of techniques are presented and final committee recommendation are enounced. Results Hartmann's procedure should be preferred to loop colostomy (Grade 2B). Hartmann's procedure offers no survival benefit compared to segmental colonic resection with primary anastomosis (Grade 2C+); Hartmann's procedure should be considered in patients with high surgical risk (Grade 2C). Total colectomy and segmental colectomy with intraoperative colonic irrigation are associated with same mortality/morbidity, however total colectomy is associated with higher rates impaired bowel function (Grade 1A). Segmental resection and primary anastomosis either with manual decompression or intraoperative colonic irrigation are associated with same mortality/morbidity rate (Grade 1A). In palliation stent placement is associated with similar mortality/morbidity rates and shorter hospital stay (Grade 2B). Stents as a bridge to surgery seems associated with lower mortality rate, shorter hospital stay, and a lower colostomy formation rate (Grade 1B). Conclusions Loop colostomy and staged procedure should be adopted in case of dramatic scenario, when neoadjuvant therapy could be expected. Hartmann's procedure should be performed in case of high risk of anastomotic

  13. Guidelenines in the management of obstructing cancer of the left colon: consensus conference of the world society of emergency surgery (WSES and peritoneum and surgery (PnS society

    Directory of Open Access Journals (Sweden)

    Pinna Antonio D

    2010-12-01

    Full Text Available Abstract Background Obstructive left colon carcinoma (OLCC is a challenging matter in terms of obstruction release as well of oncological issues. Several options are available and no guidelines are established. The paper aims to generate evidenced based recommendations on management of OLCC. Methods The PubMed and Cochrane Library databases were queried for publications focusing on OLCC published prior to April 2010. A extensive retrieval, analyses, and grading of the literature was undertaken. The findings of the research were presented and largely discussed among panellist and audience at the Consensus Conference of the World Society of Emergency Surgery (WSES and Peritoneum and Surgery (PnS Society held in Bologna July 2010. Comparisons of techniques are presented and final committee recommendation are enounced. Results Hartmann's procedure should be preferred to loop colostomy (Grade 2B. Hartmann's procedure offers no survival benefit compared to segmental colonic resection with primary anastomosis (Grade 2C+; Hartmann's procedure should be considered in patients with high surgical risk (Grade 2C. Total colectomy and segmental colectomy with intraoperative colonic irrigation are associated with same mortality/morbidity, however total colectomy is associated with higher rates impaired bowel function (Grade 1A. Segmental resection and primary anastomosis either with manual decompression or intraoperative colonic irrigation are associated with same mortality/morbidity rate (Grade 1A. In palliation stent placement is associated with similar mortality/morbidity rates and shorter hospital stay (Grade 2B. Stents as a bridge to surgery seems associated with lower mortality rate, shorter hospital stay, and a lower colostomy formation rate (Grade 1B. Conclusions Loop colostomy and staged procedure should be adopted in case of dramatic scenario, when neoadjuvant therapy could be expected. Hartmann's procedure should be performed in case of high risk of

  14. Synthesis and reactivity of TADDOL-based chiral Fe(II) PNP pincer complexes-solution equilibria between κ(2)P,N- and κ(3)P,N,P-bound PNP pincer ligands.

    Science.gov (United States)

    Holzhacker, Christian; Stöger, Berthold; Carvalho, Maria Deus; Ferreira, Liliana P; Pittenauer, Ernst; Allmaier, Günter; Veiros, Luis F; Realista, Sara; Gil, Adrià; Calhorda, Maria José; Müller, Danny; Kirchner, Karl

    2015-08-07

    Treatment of anhydrous FeX2 (X = Cl, Br) with 1 equiv. of the asymmetric chiral PNP pincer ligands PNP-R,TAD (R = iPr, tBu) with an R,R-TADDOL (TAD) moiety afforded complexes of the general formula [Fe(PNP)X2]. In the solid state these complexes adopt a tetrahedral geometry with the PNP ligand coordinated in κ(2)P,N-fashion, as shown by X-ray crystallography and Mössbauer spectroscopy. Magnetization studies led to a magnetic moment very close to 4.9μB reflecting the expected four unpaired d-electrons (quintet ground state). In solution there are equilibria between [Fe(κ(3)P,N,P-PNP-R,TAD)X2] and [Fe(κ(2)P,N-PNP-R,TAD)X2] complexes, i.e., the PNP-R,TAD ligand is hemilabile. At -50 °C these equilibria are slow and signals of the non-coordinated P-TAD arm of the κ(2)P,N-PNP-R,TAD ligand can be detected by (31)P{(1)H} NMR spectroscopy. Addition of BH3 to a solution of [Fe(PNP-iPr,TAD)Cl2] leads to selective boronation of the pendant P-TAD arm shifting the equilibrium towards the four-coordinate complex [Fe(κ(2)P,N-PNP-iPr,TAD(BH3))Cl2]. DFT calculations corroborate the existence of equilibria between four- and five-coordinated complexes. Addition of CO to [Fe(PNP-iPr,TAD)X2] in solution yields the diamagnetic octahedral complexes trans-[Fe(κ(3)P,N,P-PNP-iPr,TAD)(CO)X2], which react further with Ag(+) salts in the presence of CO to give the cationic complexes trans-[Fe(κ(3)P,N,P-PNP-iPr,TAD)(CO)2X](+). CO addition most likely takes place at the five coordinate complex [Fe(κ(3)P,N,P-PNP-iPr,TAD)X2]. The mechanism for the CO addition was also investigated by DFT and the most favorable path obtained corresponds to the rearrangement of the pincer ligand first from a κ(2)P,N- to a κ(3)P,N,P-coordination mode followed by CO coordination to [Fe(κ(3)P,N,P-PNP-iPr,TAD)X2]. Complexes bearing tBu substituents do not react with CO. Moreover, in the solid state none of the tetrahedral complexes are able to bind CO.

  15. Cutaneous adverse reactions of chemotherapy in cancer patients: A clinicoepidemiological study

    Directory of Open Access Journals (Sweden)

    Saumita Ghosh Biswal

    2018-01-01

    Full Text Available Background: The diagnosis of cutaneous adversities in the cancer patient is especially difficult, given the complexity of their illness and combination protocols used for the treatment. The present study was undertaken to know the spectrum of cutaneous adversities in patients undergoing chemotherapy and the drug(s most commonly associated with it. Materials and Methods: A total of 1000 patients with malignancies under chemotherapy in the oncology ward and outpatient department were screened in this observational study from January 2013 to February 2015. Relevant investigations for diagnosis of malignancies under chemotherapy and dermatological disorders were carried out. Results: Three hundred and eighty-four patients presented with cutaneous adversities of chemotherapy. The most common was anagen effluvium (78.6%, followed by xerosis (4.4%, thrombophlebitis (3.1%, generalised pruritus (2.9%, melanonychia (2.9%, hand-foot syndrome (2.6%, extravasation reactions (1.8%, flagellate dermatosis (1.3%, prurigo nodularis (0.8%, exfoliation (0.5%, ichthyosis (0.5%, papulopustular rash (0.3%, bullous photodermatitis (0.3%, and Sweet's syndrome (0.3%. Chemotherapeutic drugs were mostly given in combinations. Most common drugs to cause anagen effluvium were alkylating agents in combinations, hand-foot syndrome by taxanes (docetaxel, flagellate dermatoses by antitumour antibiotics (bleomycin, and exfoliation by antimetabolites (methotrexate. The limitation of this study was to imply a specific drug as the causation of the cutaneous adversities since the chemotherapy mostly consisted of combination protocols. Therefore, we have tried to associate the drug combination itself. Conclusion: Chemotherapeutic drugs produce a range of cutaneous adversities, certain specific adversities pertaining to drugs, and their combinations have been implicated which should be looked for and managed accordingly. Knowledge of the adverse effects of anticancer drugs will help

  16. Targeting the neurokinin receptor 1 with aprepitant: a novel antipruritic strategy.

    Directory of Open Access Journals (Sweden)

    Sonja Ständer

    2010-06-01

    Full Text Available Chronic pruritus is a global clinical problem with a high impact on the quality of life and lack of specific therapies. It is an excruciating and frequent symptom of e.g. uncurable renal, liver and skin diseases which often does not respond to conventional treatment with e.g. antihistamines. Therefore antipruritic therapies which target physiological mechanisms of pruritus need to be developed. Substance P (SP is a major mediator of pruritus. As it binds to the neurokinin receptor 1 (NKR1, we evaluated if the application of a NKR1 antagonist would significantly decrease chronic pruritus.Twenty hitherto untreatable patients with chronic pruritus (12 female, 8 male; mean age, 66.7 years were treated with the NKR1 antagonist aprepitant 80 mg for one week. 16 of 20 patients (80% experienced a considerable reduction of itch intensity, as assessed by the visual analog scale (VAS, range 0 to 10. Considering all patients, the mean value of pruritus intensity was significantly reduced from 8.4 VAS points (SD +/-1.7 before treatment to 4.9 VAS points (SD +/-3.2 (p<0.001, CI 1.913-5.187. Patients with dermatological diseases (e.g. atopic diathesis, prurigo nodularis had the best profit from the treatment. Side-effects were mild (nausea, vertigo, and drowsiness and only occurred in three patients.The high response rate in patients with therapy refractory pruritus suggests that the NKR1 antagonist aprepitant may indeed exhibit antipruritic effects and may present a novel, effective treatment strategy based on pathophysiology of chronic pruritus. The results are promising enough to warrant confirming the efficacy of NKR1 antagonists in a randomized, controlled clinical trial.

  17. Asymmetry of the cross section for the reaction. gamma. d. -->. pn induced by linearly polarized. gamma. rays in the energy region E/sub. gamma. / = 0. 4--0. 8 GeV and theta/sup c. m. //sub p/ = 45/sup 0/--95/sup 0/

    Energy Technology Data Exchange (ETDEWEB)

    Adamyan, F.V.; Akopyan, G.G.; Vartapetyan, G.A.; Galumyan, P.I.; Grabskii, V.O.; Karapetyan, V.V.; Karapetyan, G.V.

    1984-03-10

    The asymmetry (..sigma..) of the cross section for the reaction ..gamma..d..-->..pn has been measured for the energy range E/sub ..gamma../ = 0.4--0.8 GeV and for the angular interval theta/sup c.m.//sub p/ = 45/sup 0/--95/sup 0/. The results are at odds with the calculations by Ogawa et al. and by Huneke, both based on phenomenological models, and also with the predictions of the partial-wave analysis by Ideda et al., which incorporates dibaryon resonances.

  18. Predicting the 5-Year Risk of Biochemical Relapse After Postprostatectomy Radiation Therapy in ≥PT2, pN0 Patients With a Comprehensive Tumor Control Probability Model

    Energy Technology Data Exchange (ETDEWEB)

    Fiorino, Claudio, E-mail: fiorino.claudio@hsr.it [Department of Medical Physics, San Raffaele Scientific Institute, Milan (Italy); Broggi, Sara [Department of Medical Physics, San Raffaele Scientific Institute, Milan (Italy); Fossati, Nicola [Division of Oncology/Unit of Urology, URI, IRCCS Ospedale San Raffaele, Milan (Italy); Cozzarini, Cesare [Department of Radiotherapy, IRCCS Ospedale San Raffaele, Milan (Italy); Goldner, Gregor [Klinik für Radioonkologie, Medizinische Universität Wien, Wien (Austria); Wiegel, Thomas [Department of Radiation Oncology, University Hospital Ulm, Ulm (Germany); Hinkelbein, Wolfgang [Department of Radiation Oncology, Charité Universitats Medizin, Campus Benjamin Franklin, Berlin (Germany); Karnes, R. Jeffrey; Boorjian, Stephen A. [Department of Urology, Mayo Clinic Rochester, Rochester, Minnesota (United States); Haustermans, Karin [Department of Radiotherapy, University Hospitals Leuven, Leuven (Belgium); Joniau, Steven [Department of Urology, University Hospitals Leuven, Leuven (Belgium); Palorini, Federica [Department of Medical Physics, San Raffaele Scientific Institute, Milan (Italy); Shariat, Shahrokh [Department of Urology, Comprehensive Cancer Center, Medical University of Vienna, Vienna General Hospital, Vienna (Austria); Montorsi, Francesco [Division of Oncology/Unit of Urology, URI, IRCCS Ospedale San Raffaele, Milan (Italy); Van Poppel, Hein [Department of Urology, University Hospitals Leuven, Leuven (Belgium); Di Muzio, Nadia [Department of Radiotherapy, IRCCS Ospedale San Raffaele, Milan (Italy); Calandrino, Riccardo [Department of Medical Physics, San Raffaele Scientific Institute, Milan (Italy); Briganti, Alberto [Division of Oncology/Unit of Urology, URI, IRCCS Ospedale San Raffaele, Milan (Italy)

    2016-10-01

    Purpose: To fit the individual biochemical recurrence-free survival (bRFS) data from patients treated with postprostatectomy radiation therapy (RT) with a comprehensive tumor control probability (TCP) model. Methods and Materials: Considering pre-RT prostate-specific antigen (PSA) as a surrogate of the number of clonogens, bRFS may be expressed as a function of dose-per-fraction–dependent radiosensitivity (α{sub eff}), the number of clonogens for pre-RT PSA = 1 ng/mL (C), and the fraction of patients who relapse because of clonogens outside the treated volume (K), assumed to depend (linearly or exponentially) on pre-RT PSA and Gleason score (GS). Data from 894 node-negative, ≥pT2, pN0 hormone-naive patients treated with adjuvant (n=331) or salvage (n=563) intent were available: 5-year bRFS data were fitted grouping patients according to GS (<7:392, =7:383, >7:119). Results: The median follow-up time, pre-RT PSA, and dose were 72 months, 0.25 ng/mL, and 66.6 Gy (range 59.4-77.4 Gy), respectively. The best-fit values were 0.23 to 0.26 Gy{sup −1} and 10{sup 7} for α{sub eff} and C for the model considering a linear dependence between K and PSA. Calibration plots showed good agreement between expected and observed incidences (slope: 0.90-0.93) and moderately high discriminative power (area under the curve [AUC]: 0.68-0.69). Cross-validation showed satisfactory results (average AUCs in the training/validation groups: 0.66-0.70). The resulting dose-effect curves strongly depend on pre-RT PSA and GS. bRFS rapidly decreases with PSA: the maximum obtainable bRFS (defined as 95% of the maximum) declined by about 2.7% and 4.5% for each increment of 0.1 ng/mL for GS <7 and ≥7, respectively. Conclusions: Individual data were fitted by a TCP model, and the resulting best-fit parameters were radiobiologically consistent. The model suggests that relapses frequently result from clonogens outside the irradiated volume, supporting the choice of lymph

  19. Excitation function measurements of sup 4 sup 0 Ar(p,3n) sup 3 sup 8 K, sup 4 sup 0 Ar(p,2pn) sup 3 sup 8 Cl and sup 4 sup 0 Ar(p,2p) sup 3 sup 9 Cl reactions

    CERN Document Server

    Nagatsu, K; Suzuki, K

    1999-01-01

    For the production of sup 3 sup 8 K, excitation functions of the sup 4 sup 0 Ar(p,3n) sup 3 sup 8 K reaction and its accompanying reactions sup 4 sup 0 Ar(p,2pn) sup 3 sup 8 Cl, and sup 4 sup 0 Ar(p,2p) sup 3 sup 9 Cl were measured at the proton energy of 20.5-39.5 MeV to determine the optimum conditions of irradiation. Target cells containing argon gas were prepared using specially developed tools in an argon-replaced glove box. In the sup 4 sup 0 Ar(p,3n) sup 3 sup 8 K, sup 4 sup 0 Ar(p,2pn) sup 3 sup 8 Cl, and sup 4 sup 0 Ar(p,2p) sup 3 sup 9 Cl reactions, the maximum cross sections were 6.7+-0.7, 34+-3.3 and 11+-1.2mbarn at 37.6, 39.5 and 32.0 MeV, respectively, and the saturation thick target yields were calculated to be 560, 2200, and 1300 sup * MBq/mu A, respectively, at an incident energy of 39.5 MeV ( sup * integral yield above 21 MeV).

  20. The OsO(3)F(+) and mu-F(OsO(3)F)(2)(+) cations: their syntheses and study by Raman and (19)F NMR spectroscopy and electron structure calculations and X-ray crystal structures of [OsO(3)F][PnF(6)] (Pn = As, Sb), [OsO(3)F][HF](2)[AsF(6)], [OsO(3)F][HF][SbF(6)], and [OsO(3)F][Sb(3)F(16)].

    Science.gov (United States)

    Gerken, Michael; Dixon, David A; Schrobilgen, Gary J

    2002-01-28

    The fluoride ion donor properties of OsO(3)F(2) have been investigated. The salts [OsO(3)F][AsF(6)], [OsO(3)F][HF](2)[AsF(6)], mu-F(OsO(3)F)(2)[AsF(6)], [OsO(3)F][HF](2)[SbF(6)], and [OsO(3)F][HF][SbF(6)] have been prepared by reaction of OsO(3)F(2) with AsF(5) and SbF(5) in HF solvent and have been characterized in the solid state by Raman spectroscopy. The single-crystal X-ray diffraction studies of [OsO(3)F][AsF(6)] (P2(1)/n, a = 7.0001(11) A, c = 8.8629(13) A, beta = 92.270(7) degrees, Z = 4, and R(1) = 0.0401 at -126 degrees C), [OsO(3)F][SbF(6)] (P2(1)/c, a = 5.4772(14) A, b = 10.115(3) A, c = 12.234(3) A, beta = 99.321(5) degrees, Z = 4, and R(1) = 0.0325 at -173 degrees C), [OsO(3)F][HF](2)[AsF(6)] (P2(1)/n, a = 5.1491(9) A, b = 8.129(2) A, c = 19.636(7) A, beta = 95.099(7) degrees, Z = 4, and R(1) = 0.0348 at -117 degrees C), and [OsO(3)F][HF][SbF(6)] (Pc, a = 5.244(4) A, b = 9.646(6) A, c = 15.269(10) A, beta = 97.154(13) degrees, Z = 4, and R(1) = 0.0558 at -133 degrees C) have shown that the OsO(3)F(+) cations exhibit strong contacts to the anions and HF solvent molecules giving rise to cyclic, dimeric structures in which the osmium atoms have coordination numbers of 6. The reaction of OsO(3)F(2) with neat SbF(5) yielded [OsO(3)F][Sb(3)F(16)], which has been characterized by (19)F NMR spectroscopy in SbF(5) and SO(2)ClF solvents and by Raman spectroscopy and single-crystal X-ray diffraction in the solid state (P4(1)m, a = 10.076(6) A, c = 7.585(8) A, Z = 2, and R(1) = 0.0858 at -113 degrees C). The weak fluoride ion basicity of the Sb(3)F(16)(-) anion resulted in an OsO(3)F(+) cation (C(3)(v) point symmetry) that is well isolated from the anion and in which the osmium is four-coordinate. The geometrical parameters and vibrational frequencies of OsO(3)F(+), ReO(3)F, mu-F(OsO(3)F)(2)(+), (FO(3)Os--FPnF(5))(2), and (FO(3)Os--(HF)(2)--FPnF(5))(2) (Pn = As, Sb) have been calculated using density functional theory methods.

  1. Novel Electronic Structures of Ru-pnictides RuPn (Pn = P, As, Sb)

    Science.gov (United States)

    Goto, H.; Toriyama, T.; Konishi, T.; Ohta, Y.

    Density-functional-theory-based electronic structure calculations are made to consider the novel electronic states of Ru-pnictides RuP and RuAs where the intriguing phase transitions and superconductivity under doping of Rh have been reported. We find that there appear nearly degenerate flat bands just at the Fermi level in the high-temperature metallic phase of RuP and RuAs; the flat-band states come mainly from the 4dxy orbitals of Ru ions and the Rh doping shifts the Fermi level just above the flat bands. The splitting of the flat bands caused by their electronic instability may then be responsible for the observed phase transition to the nonmagnetic insulating phase at low temperatures. We also find that the band structure calculated for RuSb resembles that of the doped RuP and RuAs, which is consistent with experiment where superconductivity occurs in RuSb without Rh doping.

  2. Dispersion analysis of the Pn -Pn-1DG mixed finite element pair for atmospheric modelling

    Science.gov (United States)

    Melvin, Thomas

    2018-02-01

    Mixed finite element methods provide a generalisation of staggered grid finite difference methods with a framework to extend the method to high orders. The ability to generate a high order method is appealing for applications on the kind of quasi-uniform grids that are popular for atmospheric modelling, so that the method retains an acceptable level of accuracy even around special points in the grid. The dispersion properties of such schemes are important to study as they provide insight into the numerical adjustment to imbalance that is an important component in atmospheric modelling. This paper extends the recent analysis of the P2 - P1DG pair, that is a quadratic continuous and linear discontinuous finite element pair, to higher polynomial orders and also spectral element type pairs. In common with the previously studied element pair, and also with other schemes such as the spectral element and discontinuous Galerkin methods, increasing the polynomial order is found to provide a more accurate dispersion relation for the well resolved part of the spectrum but at the cost of a number of unphysical spectral gaps. The effects of these spectral gaps are investigated and shown to have a varying impact depending upon the width of the gap. Finally, the tensor product nature of the finite element spaces is exploited to extend the dispersion analysis into two-dimensions.

  3. Four Novel p.N385K, p.V36A, c.1033–1034insT and c.1417–1418delCT Mutations in the Sphingomyelin Phosphodiesterase 1 (SMPD1 Gene in Patients with Types A and B Niemann-Pick Disease (NPD

    Directory of Open Access Journals (Sweden)

    Masoumeh Dehghan Manshadi

    2015-03-01

    Full Text Available Background: Types A and B Niemann-Pick disease (NPD are autosomal-recessive lysosomal storage disorders caused by the deficient activity of acid sphingomyelinase due to mutations in the sphingomyelin phosphodiesterase 1 (SMPD1 gene. Methods: In order to determine the prevalence and distribution of SMPD1 gene mutations, the genomic DNA of 15 unrelated Iranian patients with types A and B NPD was examined using PCR, DNA sequencing and bioinformatics analysis. Results: Of 8 patients with the p.G508R mutation, 5 patients were homozygous, while the other 3 were heterozygous. One patient was heterozygous for both the p.N385K and p.G508R mutations. Another patient was heterozygous for both the p.A487V and p.G508R mutations. Two patients (one homozygous and one heterozygous showed the p.V36A mutation. One patient was homozygous for the c.1033–1034insT mutation. One patient was homozygous for the c.573delT mutation, and 1 patient was homozygous for the c.1417–1418delCT mutation. Additionally, bioinformatics analysis indicated that two new p.V36A and p.N385K mutations decreased the acid sphingomyelinase (ASM protein stability, which might be evidence to suggest the pathogenicity of these mutations. Conclusion: with detection of these new mutations, the genotypic spectrum of types A and B NPD is extended, facilitating the definition of disease-related mutations. However, more research is essential to confirm the pathogenic effect of these mutations.

  4. Effectiveness of adjuvant radiotherapy in patients with oropharyngeal and floor of mouth squamous cell carcinoma and concomitant histological verification of singular ipsilateral cervical lymph node metastasis (pN1-state - A prospective multicenter randomized controlled clinical trial using a comprehensive cohort design

    Directory of Open Access Journals (Sweden)

    Wendt Thomas G

    2009-12-01

    Full Text Available Abstract Background Modern radiotherapy plays an important role in therapy of advanced head and neck carcinomas. However, no clinical studies have been published addressing the effectiveness of postoperative radiotherapy in patients with small tumor (pT1, pT2 and concomitant ipsilateral metastasis of a single lymph node (pN1, which would provide a basis for a general treatment recommendation. Methods/Design The present study is a non-blinded, prospective, multi-center randomized controlled trial (RCT. As the primary clinical endpoint, overall-survival in patients receiving postoperative radiation therapy vs. patients without adjuvant therapy following curative intended surgery is compared. The aim of the study is to enroll 560 adult males and females for 1:1 randomization to one of the two treatment arms (irradiation/no irradiation. Since patients with small tumor (T1/T2 but singular lymph node metastasis are rare and the amount of patients consenting to randomization is not predictable in advance, all patients rejecting randomization will be treated as preferred and enrolled in a prospective observational study (comprehensive cohort design after giving informed consent. This observational part of the trial will be performed with maximum consistency to the treatment and observation protocol of the RCT. Because the impact of patient preference for a certain treatment option is not calculable, parallel design of RCT and observational study may provide a maximum of evidence and efficacy for evaluation of treatment outcome. Secondary clinical endpoints are as follows: incidence and time to tumor relapse (locoregional relapse, lymph node involvement and distant metastatic spread, Quality of life as reported by EORTC (QLQ-C30 with H&N 35 module, and time from operation to orofacial rehabilitation. All tumors represent a homogeneous clinical state and therefore additional investigation of protein expression levels within resection specimen may serve

  5. Effectiveness of adjuvant radiotherapy in patients with oropharyngeal and floor of mouth squamous cell carcinoma and concomitant histological verification of singular ipsilateral cervical lymph node metastasis (pN1-state) - A prospective multicenter randomized controlled clinical trial using a comprehensive cohort design

    Science.gov (United States)

    2009-01-01

    Background Modern radiotherapy plays an important role in therapy of advanced head and neck carcinomas. However, no clinical studies have been published addressing the effectiveness of postoperative radiotherapy in patients with small tumor (pT1, pT2) and concomitant ipsilateral metastasis of a single lymph node (pN1), which would provide a basis for a general treatment recommendation. Methods/Design The present study is a non-blinded, prospective, multi-center randomized controlled trial (RCT). As the primary clinical endpoint, overall-survival in patients receiving postoperative radiation therapy vs. patients without adjuvant therapy following curative intended surgery is compared. The aim of the study is to enroll 560 adult males and females for 1:1 randomization to one of the two treatment arms (irradiation/no irradiation). Since patients with small tumor (T1/T2) but singular lymph node metastasis are rare and the amount of patients consenting to randomization is not predictable in advance, all patients rejecting randomization will be treated as preferred and enrolled in a prospective observational study (comprehensive cohort design) after giving informed consent. This observational part of the trial will be performed with maximum consistency to the treatment and observation protocol of the RCT. Because the impact of patient preference for a certain treatment option is not calculable, parallel design of RCT and observational study may provide a maximum of evidence and efficacy for evaluation of treatment outcome. Secondary clinical endpoints are as follows: incidence and time to tumor relapse (locoregional relapse, lymph node involvement and distant metastatic spread), Quality of life as reported by EORTC (QLQ-C30 with H&N 35 module), and time from operation to orofacial rehabilitation. All tumors represent a homogeneous clinical state and therefore additional investigation of protein expression levels within resection specimen may serve for establishment of

  6. Effectiveness of adjuvant radiotherapy in patients with oropharyngeal and floor of mouth squamous cell carcinoma and concomitant histological verification of singular ipsilateral cervical lymph node metastasis (pN1-state)--a prospective multicenter randomized controlled clinical trial using a comprehensive cohort design.

    Science.gov (United States)

    Moergel, Maximilian; Jahn-Eimermacher, Antje; Krummenauer, Frank; Reichert, Torsten E; Wagner, Wilfried; Wendt, Thomas G; Werner, Jochen A; Al-Nawas, Bilal

    2009-12-23

    Modern radiotherapy plays an important role in therapy of advanced head and neck carcinomas. However, no clinical studies have been published addressing the effectiveness of postoperative radiotherapy in patients with small tumor (pT1, pT2) and concomitant ipsilateral metastasis of a single lymph node (pN1), which would provide a basis for a general treatment recommendation. The present study is a non-blinded, prospective, multi-center randomized controlled trial (RCT). As the primary clinical endpoint, overall-survival in patients receiving postoperative radiation therapy vs. patients without adjuvant therapy following curative intended surgery is compared. The aim of the study is to enroll 560 adult males and females for 1:1 randomization to one of the two treatment arms (irradiation/no irradiation). Since patients with small tumor (T1/T2) but singular lymph node metastasis are rare and the amount of patients consenting to randomization is not predictable in advance, all patients rejecting randomization will be treated as preferred and enrolled in a prospective observational study (comprehensive cohort design) after giving informed consent. This observational part of the trial will be performed with maximum consistency to the treatment and observation protocol of the RCT. Because the impact of patient preference for a certain treatment option is not calculable, parallel design of RCT and observational study may provide a maximum of evidence and efficacy for evaluation of treatment outcome. Secondary clinical endpoints are as follows: incidence and time to tumor relapse (locoregional relapse, lymph node involvement and distant metastatic spread), Quality of life as reported by EORTC (QLQ-C30 with H&N 35 module), and time from operation to orofacial rehabilitation. All tumors represent a homogeneous clinical state and therefore additional investigation of protein expression levels within resection specimen may serve for establishment of surrogate parameters of

  7. Determination of '14 MeV' cross sections for (n,p)-, (n,α)-, (n,2n)-, and (n,np + pn + d)-reactions on the elements Sc, Ni, Ge, Pd, Cd, Sm, Dy, Gd, and Yb in consideration of the 'effective' n-energy spectra

    International Nuclear Information System (INIS)

    Weigel, H.; Michel, R.; Herr, W.

    1975-01-01

    A total of 24 cross sections was determined for (n,p)-, (n,α)-, (n,2n)-, and (n,np + pn + d)-reactions of fast (so called '14 MeV') neutrons on the elements Sc, Ni, Ge, Pd, Cd, Sm, Dy, Gd, and Yb. 58 Ni(n,p) 58 Co served as monitor reaction. It is a special feature of this work that calculated neutron energy spectra for the '14 MeV' n-tube (Type Philips 18602) were considered, thus enabling us to supply each individual sigma-value with the respective n-energy distribution. On the basis of an extensive literature search (up to the beginning of 1973) the sigma-data were compared with experimental results of other authors and with those deduced from the statistical model. For some nuclides (e.g. 58 Ni, 154 Gd, 168 Yb, 176 Yb) it was possible to show the limits of applicability of the latter model. Summarizing, 12 cross sections and 3 isomeric ratios, nearly all of which belong to reaction products with rather long half-lifes, were determined for the first time. (orig.) [de

  8. Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Fan, Dongsheng; Yu, Shuiqing [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Zhao, Yanfei [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); Lee, Joon Sue [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Jian [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Zhiming M. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

    2013-07-15

    High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  9. Excitations of the isobaric analog states T=0, 1, 2 and 2 in isobars 60Zn (Tz=0), 60Cu (Tz=1) and 60Ni (Tz=2) by the two-nucleon (2p, pn, 2n) stripping transfer reactions of 16O ions on 58Ni nuclei

    International Nuclear Information System (INIS)

    Okuma, Yasuhiko

    1992-01-01

    The isobaric analog states (IAS's) T=0, 1, 2 and 2 in isobars 60 Zn (Tz=0), 60 Cu (Tz=1) and 60 Ni (Tz=2) were studied by the three types of two-nucleon (2p, pn, 2n) stripping transfer reactions induced by the same beams 16 O and targets 58 Ni at an incident energy 80 MeV. The excitation energies of observed IAS's are in good fits with those calculated theoretically. The g'nd state 2 + , T=1 in 60 Cu may not be populated vy the ( 16 O, 14 N) reaction. The mutual excitation ( 16 O, 14 N * ) may be considered in the present population in 50 Cu. The isospin aspects of these reactions are quite prominent. All angular distributions of these IAS's have a forward peaked shape. Those of the O + states show a strongly oscillated pattern. Those of the 2 + states have no evidences of the clear oscillations. The similarities are observed between the angular distributions of IAS's. The EFR-DWBA calculations, in which the direct one-step cluster transferrs of two nucleons are assumed, reproduce reasonably the data points. The similarities between the heavy and the light ion induced two-nucleon stripping transfer reactions appear in both the reaction mechanisms and the spectroscopies of residual nuclei. The excitations of these IAS's will be an appearances of the single particle properties of transferred two-nucleons. (author)

  10. Pnömatik Ekim Makinalarında Farklı Tip Dağıtma Başlıkları, Hava Hızı ve Gübreleme Normunun Akış Düzgünlüğüne Etkisi

    OpenAIRE

    Güler, İbrahim Ethem; Uygan, Fatih

    2010-01-01

    Bu araştırma pnömatik tahıl ekim makinalarında kullanılan farklı tip dağıtma başlıklarında, hava hızının ve gübreleme normunun akış düzgünlüğüne etkisini belirlemek için yapılmıştır. Araştırmada üç farklı tip dağıtma başlığı (T, Huni ve Y), üç farklı hava hızında (26, 31, 36 m/s) denenmiştir. Denemelerde Diamonyum fosfat (DAP) ve Triple süper fosfat (TSP) gübreleri kullanılmıştır. Gübreleme normları 12, 16 ve 20 kg/da, makina ilerleme hızı 1,5 m/s ve sıra arası olarak 10 cm alınmıştır. Araştı...

  11. Determination of '14 MeV' cross sections for (n,p), (n,. cap alpha. ), (n,2n), and (n,np + pn + d) reactions on the elements Sc, Ni, Ge, Pd, Cd, Sm, Dy, Gd, and Yb in consideration of the 'effective' n-energy spectra

    Energy Technology Data Exchange (ETDEWEB)

    Weigel, H; Michel, R; Herr, W [Koeln Univ. (F.R. Germany). Inst. fuer Kernchemie

    1975-01-01

    A total of 24 cross sections was determined for (n,p), (n,..cap alpha..), (n,2n), and (n,np + pn + d) reactions of fast (so called '14-MeV') neutrons on the elements Sc, Ni, Ge, Pd, Cd, Sm, Dy, Gd, and Yb. /sup 58/Ni(n,p)/sup 58/Co served as monitor reaction. It is a special feature of this work that calculated neutron energy spectra for the '14 MeV' n-tube (Type Philips 18602) were considered; each individual sigma value could thus be supplied with the respective n-energy distribution. On the basis of an extensive literature search (up to the beginning of 1973), the sigma data were compared with experimental results of other authors and with those deduced from the statistical model. For some nuclides (e.g. /sup 58/Ni, /sup 154/Gd, /sup 168/Yb, /sup 176/Yb) it was possible to show the limits of applicability of the latter model. Summarizing, 12 cross sections and 3 isomeric ratios, nearly all of which belong to reaction products with rather long half-lifes, were determined for the first time.

  12. Reinventing the PN Junction: Dimensionality Effects on Tunneling Switches

    Science.gov (United States)

    2012-05-11

    energy and will result in a constant current once the bands overlap. The tunneling event out of the dot follows sequentially after tunneling in...C. Kittel, Introduction to Solid State Physics, 8 ed.: John Wiley & Sons, Inc., 2004. [36] C. G. Van De Walle, "Band Lineups and Deformation

  13. A critical test of organic P-N photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Bird, G.R. [Rutgers Univ., Piscataway, NJ (United States)

    1996-09-01

    We present an urgent view of the field of organic solid state photovoltaic cells. This is a proper time to select the most promising materials from the Electrophotographic Industry, materials long tried in terms of stability, high quantum yield of charge carriers, but set apart by unusually high quantum yields at low applied fields. Our experience with the candidate dyes has covered new tests for identifiable impurities and removal of these impurities by verifiable methods. A new method of purification, reactive train sublimation, has been developed for DNT, one of the simplest of the outstanding perylene dyes, and the method seems applicable to some of the other promising perylene derivatives. It removes the offending impurity by converting it into the desired pure product. The role of water of hydration in the {open_quotes}wine cellar effect{close_quotes}, the slowly rising performance of newly made phthalocyanine containing cells has been analyzed. Under the concept of feasibility testing before a final refinement for practicality of materials and production methods, the hydration can be controlled for high level testing. At the same time, efforts go forward to eliminate the need. At least one of the best phthalocyanine components, X-H{sub 2}Pc, does not require water for peak performance. Finally, we have attacked BBIP (bis-benzimidazole perylene) one of the best and most enigmatic of the near infrared sensors. It has long been known and used as a mixture of synthetic isomers, and we hypothesize that either of these would be better than the uncontrolled mixture. A partial success in the form of isolating highly enriched crystals for an X-ray structure of the trans-molecule, is first presented here. A simple optical analysis method has been developed to follow enrichment procedures. For all of its difficult history, this material seems closest to a state of readiness for critical feasibility testing.

  14. Hybrid Charmonium and the p-n Puzzle

    International Nuclear Information System (INIS)

    Kisslinger, L.S.; Parno, D.; Riordan, S.

    2008-01-01

    Using the method of QCD sum rules, we estimate the energy of the lowest hybrid charmonium state, and find it to be at the energy of the Ψ (2S) state, about 600 MeV above the J/Ψ(1S) state. Since our solution is not consistent with a pure hybrid at this energy, we conclude that the Ψ (2S) state is probably an admixed cc - and hybrid cc - g state. From this conjecture, we find a possible explanation of the famous ρ-p puzzle.

  15. Molecular processes from the AGB to the PN stage

    Science.gov (United States)

    García-Hernández, D. Anibal

    2012-08-01

    Many complex organic molecules and inorganic solid-state compounds have been observed in the circumstellar shell of stars (both C-rich and O-rich) in the transition phase between Asymptotic Giant Branch (AGB) stars and Planetary Nebulae (PNe). This short (~102-104 years) phase of stellar evolution represents a wonderful laboratory for astrochemistry and provides severe constraints on any model of gas-phase and solid-state chemistry. One of the major challenges of present day astrophysics and astrochemistry is to understand the formation pathways of these complex organic molecules and inorganic solid-state compounds (e.g., polycyclic aromatic hydrocarbons, fullerenes, and graphene in the case of a C-rich chemistry and oxides and crystalline silicates in O-rich environments) in space. In this review, I present an observational review of the molecular processes in the late stages of stellar evolution with a special emphasis on the first detections of fullerenes and graphene in PNe.

  16. Chaotic generation of PN sequences : a VLSI implementation

    NARCIS (Netherlands)

    Dornbusch, A.; Pineda de Gyvez, J.

    1999-01-01

    Generation of repeatable pseudo-random sequences with chaotic analog electronics is not feasible using standard circuit topologies. Component variation caused by imperfect fabrication causes the same divergence of output sequences as does varying initial conditions. By quantizing the output of a

  17. monumente ter gedagtenis aan lt. kol henning pn pretorius (1844 ...

    African Journals Online (AJOL)

    1844-1897). IN DIE TRANSVAALSE. HOOFSTAD. Kol Dr Jan Ploeger*. 1. Die Agtergrond. Die korps 'Staatsartillerie van die ZA Republiek' se benaming is aan Wet No. 1 van 1896 ontleen en het vanaf sy ontstaan in 1881 'n verwarrende.

  18. pn: A Tool for Improved Derivation of Process Networks

    Directory of Open Access Journals (Sweden)

    Sven Verdoolaege

    2007-04-01

    Full Text Available Current emerging embedded System-on-Chip platforms are increasingly becoming multiprocessor architectures. System designers experience significant difficulties in programming these platforms. The applications are typically specified as sequential programs that do not reveal the available parallelism in an application, thereby hindering the efficient mapping of an application onto a parallel multiprocessor platform. In this paper, we present our compiler techniques for facilitating the migration from a sequential application specification to a parallel application specification using the process network model of computation. Our work is inspired by a previous research project called Compaan. With our techniques we address optimization issues such as the generation of process networks with simplified topology and communication without sacrificing the process networks' performance. Moreover, we describe a technique for compile-time memory requirement estimation which we consider as an important contribution of this paper. We demonstrate the usefulness of our techniques on several examples.

  19. MINOS: A simplified Pn solver for core calculation

    International Nuclear Information System (INIS)

    Baudron, A.M.; Lautard, J.J.

    2007-01-01

    This paper describes a new generation of the neutronic core solver MINOS resulting from developments done in the DESCARTES project. For performance reasons, the numerical method of the existing MINOS solver in the SAPHYR system has been reused in the new system. It is based on the mixed-dual finite element approximation of the simplified transport equation. We have extended the previous method to the treatment of unstructured geometries composed by quadrilaterals, allowing us to treat geometries where fuel pins are exactly represented. For Cartesian geometries, the solver takes into account assembly discontinuity coefficients in the simplified P n context. The solver has been rewritten in C + + programming language using an object-oriented design. Its general architecture was reconsidered in order to improve its capability of evolution and its maintainability. Moreover, the performance of the previous version has been improved mainly regarding the matrix construction time; this result improves significantly the performance of the solver in the context of industrial application requiring thermal-hydraulic feedback and depletion calculations. (authors)

  20. H -Supermagic Labeling on Shrubs Graph and Lm ⨀ Pn

    International Nuclear Information System (INIS)

    Ulfatimah, Risala; Roswitha, Mania; Kusmayadi, Tri Atmojo

    2017-01-01

    A nite simple graph G admits an H -covering if every edge of E ( G ) belongs to a subgraph of G isomorphic to H . We said the graph G = ( V , E ) that admits H -covering to be H -magic if there exists a bijection function f : V ( G ) ∪ E ( G ) → {1, 2, …, | V ( G )| + | E ( G )|} such that for each subgraph H ′ of G isomorphic to H , f ( H ′) = ∑ υ ∈ V ′ f ( υ ) + ∑ e ∈ E ′ f ( e ) = m ( f ) is constant. Furthermore, if f ( V ) = 1, 2, …, | V ( G )| then G is called H -supermagic. In this research we de ned S 2,2 -supermagic labeling on shrub graph Š ( m 1 , m 2 , …, m n ) and fish-supermagic labeling on L m ⨀ P n for m , n ≥ 2. (paper)

  1. Pnictogen bonding in pyrazine center dot PnX(5) (Pn = P, As, Sb and X = F, Cl, Br) complexes

    Czech Academy of Sciences Publication Activity Database

    Fanfrlík, Jindřich; Zierkiewicz, W.; Švec, P.; Růžičková, Z.; Řezáč, Jan; Michalczyk, M.; Růžička, A.; Michalska, D.; Hobza, Pavel

    2017-01-01

    Roč. 23, č. 11 (2017), č. článku 328. ISSN 1610-2940 R&D Projects: GA ČR(CZ) GBP208/12/G016 Institutional support: RVO:61388963 Keywords : pnictogen bond * interaction energy decomposition * sigma-hole magnitude * deformation energy * X-ray crystallography * charge transfer Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 1.425, year: 2016

  2. Pnömatik Ekim Makinalarında Farklı Tip Dağıtma Başlıkları, Hava Hızı ve Gübreleme Normunun Akış Düzgünlüğüne Etkisi / The Effects of Distributor Head Types, Air Velocity and Fertilizing Rate on Flow Evenness in Pneumatic Seed Drills

    OpenAIRE

    Güler, İbrahim Ethem; Uygan, Fatih

    2011-01-01

    ÖZET : Bu araştırma pnömatik tahıl ekim makinalarında kullanılan farklı tip dağıtma başlıklarında, hava hızının ve gübrelemenormunun akış düzgünlüğüne etkisini belirlemek için yapılmıştır. Araştırmada üç farklı tip dağıtma başlığı (T, Huni ve Y), üç farklıhava hızında (26, 31, 36 m/s) denenmiştir. Denemelerde Diamonyum fosfat (DAP) ve Triple süper fosfat (TSP) gübrelerikullanılmıştır. Gübreleme normları 12, 16 ve...

  3. Metal-insulator transition and superconductivity induced by Rh doping in the binary pnictides RuPn (Pn=P, As, Sb)

    Science.gov (United States)

    Hirai, Daigorou; Takayama, Tomohiro; Hashizume, Daisuke; Takagi, Hidenori

    2012-04-01

    Binary ruthenium pnictides, RuP and RuAs, with an orthorhombic MnP structure, were found to show a metal to a nonmagnetic insulator transition at TMI = 270 and 200 K, respectively. In the metallic region above TMI, a structural phase transition, accompanied with a weak anomaly in the resistivity and the magnetic susceptibility, indicative of a pseudogap formation, was identified at Ts = 330 and 280 K, respectively. These two transitions were suppressed by substituting Ru with Rh. We found superconductivity with a maximum Tc = 3.7 and 1.8 K in a narrow composition range around the critical point for the pseudogap phase, Rh content xc = 0.45 and 0.25 for Ru1-xRhxP and Ru1-xRhxAs, respectively, which may provide us with a nonmagnetic route to superconductivity at a quantum critical point.

  4. B-mode for thyroid nodule characterization at 7.5 MHz versus 13 MHz; Attualita' dell'ecografia nel modo B nella caratterizzazione delle malattie nodulari tiroidee: studio ecografiaco di confronto con sonde da 7.5 e da 13 MHz

    Energy Technology Data Exchange (ETDEWEB)

    Amodio, F.; Carbone, M.; Rossi, E.; Brunese, L.; Vallone, G. [Neaples Univ., Neaples (Italy). Dipt. di Scienze Biomorfologiche, Ist. di Scienze Radiologiche; Pisano, G.; Iorio, S. [Neaples Univ., Neaples (Italy). Dipt. di Scienze Biomorfologiche, Sez. di Anatomia Patologica e Citopatologica; Benincasa, G. [Neaples Univ., Neaples (Italy). Dipt. di Scienze Biomorfologiche, Ist. di Endocrinologia, Medicina Interna e Malattie della Nutrizione

    1999-09-01

    The paper investigates B-mode ultrasonography capabilities in diagnosis and characterizing thyroid nodules and compared the personal experience findings with those of few analytical studies in the literature. It is also compared the diagnostic accuracy of conventional 7.5 MHz versus more recent 13 MHz transducers. [Italian] Lo studio presenta i dati sull'accuratezza diagnostica dell'ecografia nel modo B con trasduttore da 7.5 MHz con quella di un trasduttore di piu' recente commercializzazione da 13 MHz. E' una tappa fondamentale nell'iter diagnostico del nodulo tiroideo, se integrata con lo studio qualitativo (color e power Doppler) e semiquantitativo (Doppler pulsato) della vascolarizzazione nodulare.

  5. Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction

    Czech Academy of Sciences Publication Activity Database

    Nádvorník, Lukáš; Olejník, Kamil; Němec, P.; Novák, Vít; Janda, Tomáš; Wunderlich, Joerg; Trojánek, F.; Jungwirth, Tomáš

    2016-01-01

    Roč. 94, č. 7 (2016), 1-10, č. článku 0753306. ISSN 1098-0121 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spintronics * opto-electronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  6. Studies of frequency dependent C-V characteristics of neutron irradiated p+-n silicon detectors

    International Nuclear Information System (INIS)

    Li, Zheng; Kraner, H.W.

    1990-10-01

    Frequency-dependent capacitance-voltage fluence (C-V) characteristics of neutron irradiated high resistivity silicon p + -n detectors have been observed up to a fluence of 8.0 x 10 12 n/cm 2 . It has been found that frequency dependence of the deviation of the C-V characteristic (from its normal V -1/2 dependence), is strongly dependent on the ratio of the defect density and the effective doping density N t /N' d . As the defect density approaches the effective dopant density, or N t /N' d → 1, the junction capacitance eventually assumes the value of the detector geometry capacitance at high frequencies (f ≤ 10 5 Hz), independent of voltage. A two-trap-level model using the concept of quasi-fermi levels has been developed, which predicts both the effects of C-V frequency dependence and dopant compensation observed in this study

  7. PN solutions of radiative heat transfer in a slab with reflective boundaries

    International Nuclear Information System (INIS)

    Atalay, M.A.

    2006-01-01

    The spherical harmonics method is used to obtain solution for the radiative heat transfer equation for a slab with reflective boundaries. An absorbing, emitting, non-isothermal, gray medium is considered with linearly anisotropic scattering. Under the condition of the thermal equilibrium, the slab boundaries are subjected to specular and diffuse reflection. The analytical form of solutions is obtained for both conservative and non-conservative cases. The accuracy of the method was verified by benchmark comparisons against the solutions of an earlier work performed by the normal-mode expansion technique. The present predictions of heat flux were found to be in good agreement with the benchmark data. a

  8. Design and Simulation of InGaN p-n Junction Solar Cell

    Directory of Open Access Journals (Sweden)

    A. Mesrane

    2015-01-01

    Full Text Available The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunlight, making it a suitable material for photovoltaic solar cells. The main objective of this work is to design and simulate the optimal InGaN single-junction solar cell. For more accurate results and best configuration, the optical properties and the physical models such as the Fermi-Dirac statistics, Auger and Shockley-Read-Hall recombination, and the doping and temperature-dependent mobility model were taken into account in simulations. The single-junction In0.622Ga0.378N (Eg = 1.39 eV solar cell is the optimal structure found. It exhibits, under normalized conditions (AM1.5G, 0.1 W/cm2, and 300 K, the following electrical parameters: Jsc=32.6791 mA/cm2, Voc=0.94091 volts, FF = 86.2343%, and η=26.5056%. It was noticed that the minority carrier lifetime and the surface recombination velocity have an important effect on the solar cell performance. Furthermore, the investigation results show that the In0.622Ga0.378N solar cell efficiency was inversely proportional with the temperature.

  9. Two possible improvements for pnQRPA. Application to the 2νββdecay

    International Nuclear Information System (INIS)

    Raduta, A. A.; Raduta, C. M.

    1998-01-01

    Two distinct many body procedures aiming at improving the Quasiparticle Random Phase Approximation (QRPA) formalism for proton-neutron dipole excitations are succinctly described. These are the boson expansion for bifermion operators and the full self-consistent QRPA. Applications for the 2νββ process are presented. The double beta decay 0 i + → 0 f + is conceived as consisting of two successive single β - virtual transitions. The intermediate states are proton-neutron dipole states and can be excited from the ground state of either mother or daughter nuclei through the Gamow-Teller operators β - and β + , respectively. We assume that the ground states of the initial and final nuclei, as well as the intermediate states describing the odd-odd nucleus, are described by the RPA states of a many body model Hamiltonian. The model Hamiltonian is successively subject to the BCS and RPA treatments. For matrix elements involving the initial nucleus, the RPA states are built on the vacuum describing the ground state of the mother nucleus, while for the second decay leg the states are provided by the RPA approach associated to the daughter nucleus. Transition operators can relate only RPA states with the phonon numbers differing by one unit. For this reason the double beta transition 0 + →2 + is forbidden. Another property of the RPA boson space and operators is that all matrix elements for the scattering operators are vanishing. At this level of approximation one neglects two important effects: 1) One misses some dynamic effects, since some of the terms involved in the many body Hamiltonian are neglected; 2) The Pauli principle is violated since the operator constituents are not satisfying the fermion commutation relations. To account for these effects one has to consider the terms which are left out in the mutual commutators. A large contribution comes from the three boson intermediate states. Also it is worth noting that the value of g pp where the GT transition amplitude is vanishing is pushed toward the unphysical region. For g pp = 1, the M GT value is only moderately diminished. In this way, the discrepancy between predictions and experimental data is decreased to a factor of about 2.5. The influence of higher order terms on β (-) and β (+) strengths was studied separately for g pp varying from zero to one. The effect on the Ikeda sum rule can be summarized as follows. The two boson states leaves the sum rule practically unchanged while the three boson states increases it by an amount of 17%. The transition 0 i + → 2 f + is entirely determined by the higher RPA contribution. Another possible way to go beyond RPA consists of re-normalizing it with some correlations which were previously neglected due to the quasi-boson assumption. Aiming at a full consistent procedure one defines a new RPA phonon operator, involving the scattering terms and yielding additional states. The new mode has a similar nature as those appearing by restoring a specific broken symmetry although in the present case there is no transformation group for which the invariance properties satisfying the Pauli principle. The magnitude of the β (-) strength taken by the new mode is an increasing function of g pp and for g pp equal to 0.4 the strength is already reasonable large. Thus, the mode might be seen in a single β - decay. Although the inclusion of the new mode restores the Pauli principle and consequently improves the Ikeda sum rule, the convergence properties are spoiled i.e., the M GT value vanishes for a smaller value of g pp , the strength of the two body interaction in the pp channel. (authors)

  10. Novel p-n heterojunction copper phosphide/cuprous oxide photocathode for solar hydrogen production.

    Science.gov (United States)

    Chen, Ying-Chu; Chen, Zhong-Bo; Hsu, Yu-Kuei

    2018-08-01

    A Copper phosphide (Cu 3 P) micro-rod (MR) array, with coverage by an n-Cu 2 O thin layer by electrodeposition as a photocathode, has been directly fabricated on copper foil via simple electro-oxidation and phosphidation for photoelectrochemical (PEC) hydrogen production. The morphology, structure, and composition of the Cu 3 P/Cu 2 O heterostructure are systematically analyzed using a scanning electron microscope (SEM), X-ray diffraction and X-ray photoelectron spectra. The PEC measurements corroborate that the p-Cu 3 P/n-Cu 2 O heterostructural photocathode illustrates efficient charge separation and low charge transfer resistance to achieve the highest photocurrent of 430 μA cm -2 that is greater than other transition metal phosphide materials. In addition, a detailed energy diagram of the p-Cu 3 P/n-Cu 2 O heterostructure was investigated using Mott-Schottky analysis. Our study paves the way to explore phosphide-based materials in a new class for solar energy applications. Copyright © 2018 Elsevier Inc. All rights reserved.

  11. Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

    DEFF Research Database (Denmark)

    Katsia, E.; Huby, N.; Tallarida, G.

    2009-01-01

    Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V...

  12. Namak 2007: expanze na nové solné pně

    Czech Academy of Sciences Publication Activity Database

    Filippi, Michal; Jäger, O.; Bruthans, J.

    2008-01-01

    Roč. 27, 1211-8397 (2008), s. 59-67 ISSN 1211-8397. [Kras /3./. Sloup, 18.04.2008-18.04.2008] R&D Projects: GA AV ČR(CZ) KJB301110501 Institutional research plan: CEZ:AV0Z30130516 Keywords : speleological research * expedition Namak * salt diapirs Subject RIV: DB - Geology ; Mineralogy

  13. Ethylene polymerization by PN3-type pincer chromium(III) complexes

    KAUST Repository

    Gong, Dirong; Liu, Wen; Chen, Tao; Chen, Zhongren; Huang, Kuo-Wei

    2014-01-01

    Chromium (III) complexes, Cr1, [2,6-(tBu2PNH) 2C5H4N]CrCl3; Cr2, [2,6-(Ph 2PNH)2C5H4N]CrCl3; Cr3, [2-(tBu2PNH)C5H4N]CrCl3 THF; Cr4, [6-(tBu2PNH)C5H4N-2- CH2NEt2]CrCl3; Cr5, [6-(tBu 2PNH)C5H4N-2-C3H2N 2]CrCl3; Cr6, [6-(tBu2PNH)C 5H4N-2-(3,5-Me2)C3H 2

  14. P-N junction solar cell grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hazrati Fard, M.

    2001-01-01

    Growth of GaAs epilayers by Molecular Beam Epitaxy was accomplished for the first time in Iran. The layers were grown on GaAs (001) substrates (p+ wafer) with Si impurity for p n junction solar cell fabrication at a rate of nearly one micron per hour and 0.25 micron per quarter. Crystalline quality of grown layers had been monitored during growth by Reflection High Energy Electron Diffraction system. Doping profile and layer thickness was assessed by electrochemical C-V profiling method. Then Hall measurements were conducted on small samples both in room temperature and liquid nitrogen temperature so giving average carrier concentration and compensation ratio. The results as like: V oc , I sc , F F, η were comparable with other laboratory reports. information for obtaining good and repeatable growths was collected. Therefore, the conditions of repeatable quality growth p n junction solar cells onto GaAs (001) substrates were determined

  15. Approximation of Mixed-Type Functional Equations in Menger PN-Spaces

    Directory of Open Access Journals (Sweden)

    M. Eshaghi Gordji

    2012-01-01

    Full Text Available Let X and Y be vector spaces. We show that a function f:X→Y with f(0=0 satisfies Δf(x1,…,xn=0 for all x1,…,xn∈X, if and only if there exist functions C:X×X×X→Y, B:X×X→Y and A:X→Y such that f(x=C(x,x,x+B(x,x+A(x for all x∈X, where the function C is symmetric for each fixed one variable and is additive for fixed two variables, B is symmetric bi-additive, A is additive and Δf(x1,…,xn=∑k=2n(∑i1=2k∑i2=i1+1k+1⋯∑in-k+1=in-k+1nf(∑i=1,i≠i1,…,in-k+1nxi-∑r=1n-k+1xir+f(∑i=1nxi-2n-2∑i=2n(f(x1+xi+f(x1-xi+2n-1(n-2f(x1 (n∈N, n≥3 for all x1,…,xn∈X. Furthermore, we solve the stability problem for a given function f satisfying Δf(x1,…,xn=0, in the Menger probabilistic normed spaces.

  16. Spin dependent surface recombination in silicon p-n junctions: the effect of irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kaplan, D [Laboratoire Central de Recherches, 91 - Corbeville par Orsay (France); Pepper, M [Cambridge Univ. (UK). Cavendish Lab.

    1980-06-01

    The results are presented of an investigation of spin dependent recombination in (100) oriented, gate controlled Si diodes irradiated by 30 keV electrons. After irradiation, recombination at the Si-SiO/sub 2/ interface is increased, and saturation of the spin resonance increases the diode forward current by 5 parts in 10/sup 4/. The results cannot be described by a conventional Shockley-Read recombination model. An alternative picture is proposed involving recombination between trapped electrons and trapped holes.

  17. PN solutions for the slowing-down and the cell calculation problems in plane geometry

    International Nuclear Information System (INIS)

    Caldeira, Alexandre David

    1999-01-01

    In this work P N solutions for the slowing-down and cell problems in slab geometry are developed. To highlight the main contributions of this development, one can mention: the new particular solution developed for the P N method applied to the slowing-down problem in the multigroup model, originating a new class of polynomials denominated Chandrasekhar generalized polynomials; the treatment of a specific situation, known as a degeneracy, arising from a particularity in the group constants and the first application of the P N method, for arbitrary N, in criticality calculations at the cell level reported in literature. (author)

  18. Development of nodal interface conditions for a PN approximation nodal model

    International Nuclear Information System (INIS)

    Feiz, M.

    1993-01-01

    A relation was developed for approximating higher order odd-moments from lower order odd-moments at the nodal interfaces of a Legendre polynomial nodal model. Two sample problems were tested using different order P N expansions in adjacent nodes. The developed relation proved to be adequate and matched the nodal interface flux accurately. The development allows the use of different order expansions in adjacent nodes, and will be used in a hybrid diffusion-transport nodal model. (author)

  19. Adaptive Security Architecture based on EC-MQV Algorithm in Personal Network (PN)

    DEFF Research Database (Denmark)

    Mihovska, Albena D.; Prasad, Neeli R.

    2007-01-01

    Abstract — Personal Networks (PNs) have been focused on in order to support the user’s business and private activities without jeopardizing privacy and security of the users and their data. In such a network, it is necessary to produce a proper key agreement method according to the feature...... of the network. One of the features of the network is that the personal devices have deferent capabilities such as computational ability, memory size, transmission power, processing speed and implementation cost. Therefore an adaptive security mechanism should be contrived for such a network of various device...... combinations based on user’s location and device’s capability. The paper proposes new adaptive security architecture with three levels of asymmetric key agreement scheme by using context-aware security manager (CASM) based on elliptic curve cryptosystem (EC-MQV)....

  20. Cooling System for a Frame-Store PN-CCD Detector for Low Background Application

    CERN Document Server

    Pereira, H; Santos Silva, P; Kuster, M; Lang, P

    2012-01-01

    The astroparticle physics experiment CERN Axion Solar Telescope (CAST) aims to detect hypothetical axions or axion-like particles produced in the Sun by the Primakoff process. A Large Hadron Collider (LHC) prototype superconducting dipole magnet provides a 9 T transverse magnetic field for the conversion of axions into detectable X-ray photons. These photons are detected with an X-ray telescope and a novel type of frame-store CCD detector built from radio-pure materials, installed in the optics focal plane. A novel type of cooling system has been designed and built based on krypton-filled cryogenic heat pipes, made out of oxygen-free radiopure copper, and a Stirling cryocooler as cold source. The heat pipes provide an efficient thermal coupling between the cryocooler and the CCD which is kept at stable temperatures between 150 and 230 K within an accuracy of 0.1 K. A graded-Z radiation shield, also serving as a gas cold-trap operated at 120 K, is implemented to reduce the surface contamination of the CCD wind...