Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

NARCIS (Netherlands)

Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

2008-01-01

The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

Direct-write maskless lithography using patterned oxidation of Si-substrate Induced by femtosecond laser pulses

Science.gov (United States)

Kiani, Amirkianoosh; Venkatakrishnan, Krishnan; Tan, Bo

2013-03-01

In this study we report a new method for direct-write maskless lithography using oxidized silicon layer induced by high repetition (MHz) ultrafast (femtosecond) laser pulses under ambient condition. The induced thin layer of predetermined pattern can act as an etch stop during etching process in alkaline etchants such as KOH. The proposed method can be leading to promising solutions for direct-write maskless lithography technique since the proposed method offers a higher degree of flexibility and reduced time and cost of fabrication which makes it particularly appropriate for rapid prototyping and custom scale manufacturing. A Scanning Electron Microscope (SEM), Micro-Raman, Energy Dispersive X-ray (EDX), optical microscope and X-ray diffraction spectroscopy (XRD) were used to evaluate the quality of oxidized layer induced by laser pulses.

Atom lithography of Fe

NARCIS (Netherlands)

Sligte, te E.; Smeets, B.; van der Stam, K.M.R.; Herfst, R.W.; Straten, van der P.; Beijerinck, H.C.W.; Leeuwen, van K.A.H.

2004-01-01

Direct write atom lithography is a technique in which nearly resonant light is used to pattern an atom beam. Nanostructures are formed when the patterned beam falls onto a substrate. We have applied this lithography scheme to a ferromagnetic element, using a 372 nm laser light standing wave to

Resolution Improvement and Pattern Generator Development for the Maskless Micro-Ion-Beam Reduction Lithography System

International Nuclear Information System (INIS)

Jiang, Ximan

2006-01-01

The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

Vacuum system design for a superconducting X-ray lithography light source

International Nuclear Information System (INIS)

Schuchman, J.C.

1990-01-01

A superconducting electron storage ring for X-ray lithography (SXLS) is to be built at Brookhaven National Laboratory (BNL). The goal is to design and construct a light source specifically dedicated to X-ray lithography production and which would be used as a prototype in a technology transfer to American industry. The machine will be built in two phases: phase I, a low energy ring (200 MeV, 500 mA) using all room temperature magnets which will be used primarily for low energy injection studies. Phase II will be a full energy machine (690 MeV, 500 mA) where the room temperature 180 0 dipole magnets of phase I will be replaced with superconducting magnets. The machine, with a racetrack shape and a circumference of 8.5 m, is designed to be portable and replaceable as a single unit. This paper will discuss the vacuum system design for both phases; i.e. gas desorption, warm bore vs cold bore, ion trapping, clearing electrodes, and diagnostic instrumentation. (author)

Design for manufacturability with advanced lithography

CERN Document Server

Yu, Bei

2016-01-01

This book introduces readers to the most advanced research results on Design for Manufacturability (DFM) with multiple patterning lithography (MPL) and electron beam lithography (EBL).  The authors describe in detail a set of algorithms/methodologies to resolve issues in modern design for manufacturability problems with advanced lithography.  Unlike books that discuss DFM from the product level, or physical manufacturing level, this book describes DFM solutions from a circuit design level, such that most of the critical problems can be formulated and solved through combinatorial algorithms. Enables readers to tackle the challenge of layout decompositions for different patterning techniques; Presents a coherent framework, including standard cell compliance and detailed placement, to enable Triple Patterning Lithography (TPL) friendly design; Includes coverage of the design for manufacturability with E-Beam lithography.

High performance Si immersion gratings patterned with electron beam lithography

Science.gov (United States)

Gully-Santiago, Michael A.; Jaffe, Daniel T.; Brooks, Cynthia B.; Wilson, Daniel W.; Muller, Richard E.

2014-07-01

by a factor of 5. (3) The serial write process for typical gratings yields write times of about 24 hours- this makes prototyping costly. We discuss work with negative e-beam resist to reduce the fill factor of exposure, and therefore limit the exposure time. We also discuss the tradeoffs of long write-time serial write processes like e-beam with UV photomask lithography. We show the results of experiments on small pattern size prototypes on silicon wafers. Current prototypes now exceed 30 dB of suppression on spectral and spatial dimension ghosts compared to monochromatic spectral purity measurements of the backside of Si echelle gratings in reflection at 632 nm. We perform interferometry at 632 nm in reflection with a 25 mm circular beam on a grating with a blaze angle of 71.6°. The measured wavefront error is 0.09 waves peak to valley.

Extension of optical lithography by mask-litho integration with computational lithography

Science.gov (United States)

Takigawa, T.; Gronlund, K.; Wiley, J.

2010-05-01

Wafer lithography process windows can be enlarged by using source mask co-optimization (SMO). Recently, SMO including freeform wafer scanner illumination sources has been developed. Freeform sources are generated by a programmable illumination system using a micro-mirror array or by custom Diffractive Optical Elements (DOE). The combination of freeform sources and complex masks generated by SMO show increased wafer lithography process window and reduced MEEF. Full-chip mask optimization using source optimized by SMO can generate complex masks with small variable feature size sub-resolution assist features (SRAF). These complex masks create challenges for accurate mask pattern writing and low false-defect inspection. The accuracy of the small variable-sized mask SRAF patterns is degraded by short range mask process proximity effects. To address the accuracy needed for these complex masks, we developed a highly accurate mask process correction (MPC) capability. It is also difficult to achieve low false-defect inspections of complex masks with conventional mask defect inspection systems. A printability check system, Mask Lithography Manufacturability Check (M-LMC), is developed and integrated with 199-nm high NA inspection system, NPI. M-LMC successfully identifies printable defects from all of the masses of raw defect images collected during the inspection of a complex mask. Long range mask CD uniformity errors are compensated by scanner dose control. A mask CD uniformity error map obtained by mask metrology system is used as input data to the scanner. Using this method, wafer CD uniformity is improved. As reviewed above, mask-litho integration technology with computational lithography is becoming increasingly important.

Lithography requirements in complex VLSI device fabrication

International Nuclear Information System (INIS)

Wilson, A.D.

1985-01-01

Fabrication of complex very large scale integration (VLSI) circuits requires continual advances in lithography to satisfy: decreasing minimum linewidths, larger chip sizes, tighter linewidth and overlay control, increasing topography to linewidth ratios, higher yield demands, increased throughput, harsher device processing, lower lithography cost, and a larger part number set with quick turn-around time. Where optical, electron beam, x-ray, and ion beam lithography can be applied to judiciously satisfy the complex VLSI circuit fabrication requirements is discussed and those areas that are in need of major further advances are addressed. Emphasis will be placed on advanced electron beam and storage ring x-ray lithography

Innovative SU-8 Lithography Techniques and Their Applications

Directory of Open Access Journals (Sweden)

Jeong Bong Lee

2014-12-01

Full Text Available SU-8 has been widely used in a variety of applications for creating structures in micro-scale as well as sub-micron scales for more than 15 years. One of the most common structures made of SU-8 is tall (up to millimeters high-aspect-ratio (up to 100:1 3D microstructure, which is far better than that made of any other photoresists. There has been a great deal of efforts in developing innovative unconventional lithography techniques to fully utilize the thick high aspect ratio nature of the SU-8 photoresist. Those unconventional lithography techniques include inclined ultraviolet (UV exposure, back-side UV exposure, drawing lithography, and moving-mask UV lithography. In addition, since SU-8 is a negative-tone photoresist, it has been a popular choice of material for multiple-photon interference lithography for the periodic structure in scales down to deep sub-microns such as photonic crystals. These innovative lithography techniques for SU-8 have led to a lot of unprecedented capabilities for creating unique micro- and nano-structures. This paper reviews such innovative lithography techniques developed in the past 15 years or so.

Studying the Technology of Creating Cortical Electrode Instruments using the Rapid Prototyping Technology

Directory of Open Access Journals (Sweden)

Ablyaz T. R.

2017-06-01

Full Text Available This paper shows the results of studying the technology of manufacturing cortical electrode-instruments (EI with the use of indirect methods of the Rapid Prototyping technology. Functional EI prototypes were made by layered synthesis of the photopolymer material with the use of the stereolithography technology (SLA - Stereo Lithography Apparatus. The article is focused on two methods of indirect EI manufacturing. One of the EI prototypes was used for making a molded wax model for hot investment casting, followed by applying copper coating. The second prototype was used for applying copper plating to a prepared current-conductive layer. As a result of EDMing a steel workpiece, both EIs reached the desired depth, which is 1 mm. The copper plating applied to the EI preserves its integrity. Through the use of the casting technology, there is a possibility to cut the economic costs by 35%. Using a prototype with preliminarily applied conductive coating makes it possible to make geometrically-complex EIs.

Immersion lithography defectivity analysis at DUV inspection wavelength

Science.gov (United States)

Golan, E.; Meshulach, D.; Raccah, N.; Yeo, J. Ho.; Dassa, O.; Brandl, S.; Schwarz, C.; Pierson, B.; Montgomery, W.

2007-03-01

Significant effort has been directed in recent years towards the realization of immersion lithography at 193nm wavelength. Immersion lithography is likely a key enabling technology for the production of critical layers for 45nm and 32nm design rule (DR) devices. In spite of the significant progress in immersion lithography technology, there remain several key technology issues, with a critical issue of immersion lithography process induced defects. The benefits of the optical resolution and depth of focus, made possible by immersion lithography, are well understood. Yet, these benefits cannot come at the expense of increased defect counts and decreased production yield. Understanding the impact of the immersion lithography process parameters on wafer defects formation and defect counts, together with the ability to monitor, control and minimize the defect counts down to acceptable levels is imperative for successful introduction of immersion lithography for production of advanced DR's. In this report, we present experimental results of immersion lithography defectivity analysis focused on topcoat layer thickness parameters and resist bake temperatures. Wafers were exposed on the 1150i-α-immersion scanner and 1200B Scanner (ASML), defect inspection was performed using a DUV inspection tool (UVision TM, Applied Materials). Higher sensitivity was demonstrated at DUV through detection of small defects not detected at the visible wavelength, indicating on the potential high sensitivity benefits of DUV inspection for this layer. The analysis indicates that certain types of defects are associated with different immersion process parameters. This type of analysis at DUV wavelengths would enable the optimization of immersion lithography processes, thus enabling the qualification of immersion processes for volume production.

High speed hydraulic scanner for deep x-ray lithography

International Nuclear Information System (INIS)

Milne, J.C.; Johnson, E.D.

1997-07-01

From their research and development in hard x-ray lithography, the authors have found that the conventional leadscrew driven scanner stages do not provide adequate scan speed or travel. These considerations have led the authors to develop a scanning system based on a long stroke hydraulic drive with 635 mm of travel and closed loop feedback to position the stage to better than 100 micrometers. The control of the device is through a PC with a custom LabView interface coupled to simple x-ray beam diagnostics. This configuration allows one to set a variety of scan parameters, including target dose, scan range, scan rates, and dose rate. Results from the prototype system at beamline X-27B are described as well as progress on a production version for the X-14B beamline

High speed hydraulic scanner for deep x-ray lithography

Energy Technology Data Exchange (ETDEWEB)

Milne, J.C.; Johnson, E.D.

1997-07-01

From their research and development in hard x-ray lithography, the authors have found that the conventional leadscrew driven scanner stages do not provide adequate scan speed or travel. These considerations have led the authors to develop a scanning system based on a long stroke hydraulic drive with 635 mm of travel and closed loop feedback to position the stage to better than 100 micrometers. The control of the device is through a PC with a custom LabView interface coupled to simple x-ray beam diagnostics. This configuration allows one to set a variety of scan parameters, including target dose, scan range, scan rates, and dose rate. Results from the prototype system at beamline X-27B are described as well as progress on a production version for the X-14B beamline.

Data sharing system for lithography APC

Science.gov (United States)

Kawamura, Eiichi; Teranishi, Yoshiharu; Shimabara, Masanori

2007-03-01

We have developed a simple and cost-effective data sharing system between fabs for lithography advanced process control (APC). Lithography APC requires process flow, inter-layer information, history information, mask information and so on. So, inter-APC data sharing system has become necessary when lots are to be processed in multiple fabs (usually two fabs). The development cost and maintenance cost also have to be taken into account. The system handles minimum information necessary to make trend prediction for the lots. Three types of data have to be shared for precise trend prediction. First one is device information of the lots, e.g., process flow of the device and inter-layer information. Second one is mask information from mask suppliers, e.g., pattern characteristics and pattern widths. Last one is history data of the lots. Device information is electronic file and easy to handle. The electronic file is common between APCs and uploaded into the database. As for mask information sharing, mask information described in common format is obtained via Wide Area Network (WAN) from mask-vender will be stored in the mask-information data server. This information is periodically transferred to one specific lithography-APC server and compiled into the database. This lithography-APC server periodically delivers the mask-information to every other lithography-APC server. Process-history data sharing system mainly consists of function of delivering process-history data. In shipping production lots to another fab, the product-related process-history data is delivered by the lithography-APC server from the shipping site. We have confirmed the function and effectiveness of data sharing systems.

Lithography alternatives meet design style reality: How do they "line" up?

Science.gov (United States)

Smayling, Michael C.

2016-03-01

Optical lithography resolution scaling has stalled, giving innovative alternatives a window of opportunity. One important factor that impacts these lithographic approaches is the transition in design style from 2D to 1D for advanced CMOS logic. Just as the transition from 3D circuits to 2D fabrication 50 years ago created an opportunity for a new breed of electronics companies, the transition today presents exciting and challenging time for lithographers. Today, we are looking at a range of non-optical lithography processes. Those considered here can be broadly categorized: self-aligned lithography, self-assembled lithography, deposition lithography, nano-imprint lithography, pixelated e-beam lithography, shot-based e-beam lithography .Do any of these alternatives benefit from or take advantage of 1D layout? Yes, for example SAPD + CL (Self Aligned Pitch Division combined with Complementary Lithography). This is a widely adopted process for CMOS nodes at 22nm and below. Can there be additional design / process co-optimization? In spite of the simple-looking nature of 1D layout, the placement of "cut" in the lines and "holes" for interlayer connections can be tuned for a given process capability. Examples of such optimization have been presented at this conference, typically showing a reduction of at least one in the number of cut or hole patterns needed.[1,2] Can any of the alternatives complement each other or optical lithography? Yes.[3] For example, DSA (Directed Self Assembly) combines optical lithography with self-assembly. CEBL (Complementary e-Beam Lithography) combines optical lithography with SAPD for lines with shot-based e-beam lithography for cuts and holes. Does one (shrinking) size fit all? No, that's why we have many alternatives. For example NIL (Nano-imprint Lithography) has been introduced for NAND Flash patterning where the (trending lower) defectivity is acceptable for the product. Deposition lithography has been introduced in 3D NAND Flash to

Rapid Prototyping and its Application in Dentistry

Directory of Open Access Journals (Sweden)

V. N. V. Madhav

2013-01-01

Full Text Available Medical implants and biological models have three main characteristics: low volume, complex shape, and can be customized. These characteristics suit very well with Rapid Prototyping (RP and Rapid Manufacturing (RM processes. RP/RM processes are fabricated part layer- by-layer until complete shape finished from 3D model. Biocompatible materials, such as Titanium and Titanium alloy, Zirconium, Cobalt Chromium, PEEK, etc, are used for fabrication process. Reverse Engineering (RE technology greatly affects RP/RM processes. RE is used to capture or scan image of the limb, cranium, tooth, and other biological objects. Three common methods to get the image are 3D laser scanning, Computer Tomography (CT, and Magnetic Resonance Imaging (MRI. Main RP/RM techniques used in Dentistry are Stereotype Lithography Apparatus (SLA, Fused Deposition Modeling (FDM, Selective Laser Sintering (SLS, and ink jet printing. This article reviews the changing scenario of technology in dentistry with special emphasis on Rapid Prototyping and its various applications in Dentistry.

Manipulation of heat-diffusion channel in laser thermal lithography.

Science.gov (United States)

Wei, Jingsong; Wang, Yang; Wu, Yiqun

2014-12-29

Laser thermal lithography is a good alternative method for forming small pattern feature size by taking advantage of the structural-change threshold effect of thermal lithography materials. In this work, the heat-diffusion channels of laser thermal lithography are first analyzed, and then we propose to manipulate the heat-diffusion channels by inserting thermal conduction layers in between channels. Heat-flow direction can be changed from the in-plane to the out-of-plane of the thermal lithography layer, which causes the size of the structural-change threshold region to become much smaller than the focused laser spot itself; thus, nanoscale marks can be obtained. Samples designated as "glass substrate/thermal conduction layer/thermal lithography layer (100 nm)/thermal conduction layer" are designed and prepared. Chalcogenide phase-change materials are used as thermal lithography layer, and Si is used as thermal conduction layer to manipulate heat-diffusion channels. Laser thermal lithography experiments are conducted on a home-made high-speed rotation direct laser writing setup with 488 nm laser wavelength and 0.90 numerical aperture of converging lens. The writing marks with 50-60 nm size are successfully obtained. The mark size is only about 1/13 of the focused laser spot, which is far smaller than that of the light diffraction limit spot of the direct laser writing setup. This work is useful for nanoscale fabrication and lithography by exploiting the far-field focusing light system.

Nanoimprint Lithography on curved surfaces prepared by fused deposition modelling

International Nuclear Information System (INIS)

Köpplmayr, Thomas; Häusler, Lukas; Bergmair, Iris; Mühlberger, Michael

2015-01-01

Fused deposition modelling (FDM) is an additive manufacturing technology commonly used for modelling, prototyping and production applications. The achievable surface roughness is one of its most limiting aspects. It is however of great interest to create well-defined (nanosized) patterns on the surface for functional applications such as optical effects, electronics or bio-medical devices. We used UV-curable polymers of different viscosities and flexible stamps made of poly(dimethylsiloxane) (PDMS) to perform Nanoimprint Lithography (NIL) on FDM-printed curved parts. Substrates with different roughness and curvature were prepared using a commercially available 3D printer. The nanoimprint results were characterized by optical light microscopy, profilometry and atomic force microscopy (AFM). Our experiments show promising results in creating well-defined microstructures on the 3D-printed parts. (paper)

SOR Lithography in West Germany

Science.gov (United States)

Heuberger, Anton

1989-08-01

The 64 Mbit DRAM will represent the first generation of integrated circuits which cannot be produced reasonably by means of optical lithography techniques. X-ray lithography using synchrotron radiation seems to be the most promising method in overcoming the problems in the sub-0.5 micron range. The first year of production of the 64 Mbit DRAM will be 1995 or 1996. This means that X-ray lithography has to show its applicability in an industrial environment by 1992 and has to prove that the specifications of a 64 Mbit DRAM technology can actually be achieved. Part of this task is a demonstration of production suitable equipment such as the X-ray stepper, including an appropriate X-ray source and measurement and inspection tools. The most important bottlenecks on the way toward reaching these goals are linked to the 1 x scale mask technology, especially the pattern definition accuracy and zero level of printing defects down to the order of magnitude of 50 nm. Specifically, fast defect detection methods on the basis of high resolution e-beam techniques and repair methods have to be developed. The other problems of X-ray lithography, such as high quality single layer X-ray resists, X-ray sources and stepper including alignment are either well on the way or are already solved.

Modular EUV Source for the next generation lithography

International Nuclear Information System (INIS)

Sublemontier, O.; Rosset-Kos, M.; Ceccotti, T.; Hergott, J.F.; Auguste, Th.; Normand, D.; Schmidt, M.; Beaumont, F.; Farcage, D.; Cheymol, G.; Le Caro, J.M.; Cormont, Ph.; Mauchien, P.; Thro, P.Y.; Skrzypczak, J.; Muller, S.; Marquis, E.; Barthod, B.; Gaurand, I.; Davenet, M.; Bernard, R.

2011-01-01

The present work, performed in the frame of the EXULITE project, was dedicated to the design and characterization of a laser-plasma-produced extreme ultraviolet (EUV) source prototype at 13.5 nm for the next generation lithography. It was conducted in cooperation with two laboratories from CEA, ALCATEL and THALES. One of our approach originalities was the laser scheme modularity. Six Nd:YAG laser beams were focused at the same time on a xenon filament jet to generate the EUV emitting plasma. Multiplexing has important industrial advantages and led to interesting source performances in terms of in-band power, stability and angular emission properties with the filament jet target. A maximum conversion efficiency (CE) value of 0.44% in 2π sr and 2% bandwidth was measured, which corresponds to a maximum in band EUV mean power of 7.7 W at a repetition rate of 6 kHz. The EUV emission was found to be stable and isotropic in these conditions. (authors)

Maskless, resistless ion beam lithography

International Nuclear Information System (INIS)

Ji, Qing

2003-01-01

As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O 2 + , BF 2 + , P + etc., for surface modification and doping applications. With optimized source condition, around 85% of BF 2 + , over 90% of O 2 + and P + have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He + beam is as high as 440 A/cm 2 · Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O 2 + ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O 2 + ions with the dose of 10 15 cm -2 . The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P

Plasmonic direct writing lithography with a macroscopical contact probe

Science.gov (United States)

Huang, Yuerong; Liu, Ling; Wang, Changtao; Chen, Weidong; Liu, Yunyue; Li, Ling

2018-05-01

In this work, we design a plasmonic direct writing lithography system with a macroscopical contact probe to achieve nanometer scale spots. The probe with bowtie-shaped aperture array adopts spring hinge and beam deflection method (BDM) to realize near-field lithography. Lithography results show that a macroscopical plasmonic contact probe can achieve a patterning resolution of around 75 nm at 365 nm wavelength, and demonstrate that the lithography system is promising for practical applications due to beyond the diffraction limit, low cost, and simplification of system configuration. CST calculations provide a guide for the design of recording structure and the arrangement of placing polarizer.

High-resolution imprint and soft lithography for patterning self-assembling systems

NARCIS (Netherlands)

Duan, X.

2010-01-01

This thesis contributes to the continuous development of patterning strategies in several different areas of unconventional nanofabrication. A series of soft lithography approaches (microcontact printing, nanomolding in capillaries), nanoimprint lithography (NIL), and capillary force lithography

Maskless, resistless ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Ji, Qing [Univ. of California, Berkeley, CA (United States)

2003-01-01

As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O₂⁺, BF₂⁺, P⁺ etc., for surface modification and doping applications. With optimized source condition, around 85% of BF₂⁺, over 90% of O₂⁺ and P⁺ have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He⁺ beam is as high as 440 A/cm² • Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O₂⁺ ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O₂⁺ ions with the dose of 10¹⁵ cm^-2. The oxide can then serve as a hard mask for patterning of the Si film. The

Regular cell design approach considering lithography-induced process variations

OpenAIRE

Gómez Fernández, Sergio

2014-01-01

The deployment delays for EUVL, forces IC design to continue using 193nm wavelength lithography with innovative and costly techniques in order to faithfully print sub-wavelength features and combat lithography induced process variations. The effect of the lithography gap in current and upcoming technologies is to cause severe distortions due to optical diffraction in the printed patterns and thus degrading manufacturing yield. Therefore, a paradigm shift in layout design is mandatory towards ...

Intregrating metallic wiring with three-dimensional polystyrene colloidal crystals using electron-beam lithography and three-dimensional laser lithography

International Nuclear Information System (INIS)

Tian, Yaolan; Isotalo, Tero J; Konttinen, Mikko P; Li, Jiawei; Heiskanen, Samuli; Geng, Zhuoran; Maasilta, Ilari J

2017-01-01

We demonstrate a method to fabricate narrow, down to a few micron wide metallic leads on top of a three-dimensional (3D) colloidal crystal self-assembled from polystyrene (PS) nanospheres of diameter 260 nm, using electron-beam lithography. This fabrication is not straightforward due to the fact that PS nanospheres cannot usually survive the harsh chemical treatments required in the development and lift-off steps of electron-beam lithography. We solve this problem by increasing the chemical resistance of the PS nanospheres using an additional electron-beam irradiation step, which allows the spheres to retain their shape and their self-assembled structure, even after baking to a temperature of 160 °C, the exposure to the resist developer and the exposure to acetone, all of which are required for the electron-beam lithography step. Moreover, we show that by depositing an aluminum oxide capping layer on top of the colloidal crystal after the e-beam irradiation, the surface is smooth enough so that continuous metal wiring can be deposited by the electron-beam lithography. Finally, we also demonstrate a way to self-assemble PS colloidal crystals into a microscale container, which was fabricated using direct-write 3D laser-lithography. Metallic wiring was also successfully integrated with the combination of a container structure and a PS colloidal crystal. Our goal is to make a device for studies of thermal transport in 3D phononic crystals, but other phononic or photonic crystal applications could also be envisioned. (paper)

X-ray lithography

International Nuclear Information System (INIS)

Malek, C.K.

1989-01-01

Any type of lithography is a means of printing a pattern. The suitable lithographic tool is defined according to what kind of application the replication technique is aimed at, that is to say, what size of pattern, on what type of substrate and how many substrates are desired. The trend in all the fields of science and fabrication is to go towards smaller dimensions. Especially in the case of advanced device fabrication in the semiconductor industry, the reduction of dimensions results in a higher density of integrated circuits that will result in lower cost per function and improved performance. Lithography is used to define areas that are usually protected by a resist pattern in relief on a substrate and is followed by a process which transfers the aerial pattern from the resist to the bulk substrate as, for example, in microelectronics, in between two steps of the process or levels that are used for selective diffusion of impurities to produce the desired electrical characteristics, etching, metallization

Progress in coherent lithography using table-top extreme ultraviolet lasers

Science.gov (United States)

Li, Wei

Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in science and technology. Our capability to fabricate these nanostructures routinely for sure will impact the advancement of nanoscience. Apart from the high volume manufacturing in semiconductor industry, a small-scale but reliable nanofabrication tool can dramatically help the research in the field of nanotechnology. This dissertation describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief review of the main characteristics of table-top EUV lasers will be addressed concentrating on its high power and large coherence radius that enable the lithography application described herein. The development of a Talbot EUV lithography system which is capable of printing 50nm half pitch nanopatterns will be illustrated in chapter III. A detailed discussion of its resolution limit will be presented followed by the development of X-Y-Z positioning stage, the fabrication protocol for diffractive EUV mask, and the pattern transfer using self- developed ion beam etching, and the dose control unit. In addition, this dissertation demonstrated the capability to fabricate functional periodic nanostructures using Talbot EUV lithography. After that, resolution enhancement techniques like multiple exposure, displacement Talbot EUV lithography, fractional Talbot EUV lithography, and Talbot lithography using 18.9nm amplified spontaneous emission laser will be demonstrated. Chapter IV will describe a hybrid EUV lithography which combines the Talbot imaging and interference lithography rendering a high resolution

Reverse-contact UV nanoimprint lithography for multilayered structure fabrication

DEFF Research Database (Denmark)

Kehagias, N.; Reboud, V.; Chansin, G.

2007-01-01

In this paper, we report results on a newly developed nanofabrication technique, namely reverse-contact UV nanoimprint lithography. This technique is a combination of nanoimprint lithography and contact printing lithography. In this process, a lift-off resist and a UV cross-linkable polymer...... are spin-coated successively onto a patterned UV mask-mould. These thin polymer films are then transferred from the mould to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light. After separation of the mould and the substrate, the unexposed...... polymer areas are dissolved in a developer solution leaving behind the negative features of the original stamp. This method delivers resist pattern transfer without a residual layer, thereby rending unnecessary the etching steps typically needed in the imprint lithography techniques for three...

Graphene nanoribbon superlattices fabricated via He ion lithography

International Nuclear Information System (INIS)

Archanjo, Braulio S.; Fragneaud, Benjamin; Gustavo Cançado, Luiz; Winston, Donald; Miao, Feng; Alberto Achete, Carlos; Medeiros-Ribeiro, Gilberto

2014-01-01

Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He + -beam lithography can texture graphene with less damage

Graphene nanoribbon superlattices fabricated via He ion lithography

Energy Technology Data Exchange (ETDEWEB)

Archanjo, Braulio S., E-mail: bsarchanjo@inmetro.gov.br [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil); Fragneaud, Benjamin [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil); Departamento de Física, Universidade Federal de Juiz de Fora, Juiz de Fora, MG 36036-330 (Brazil); Gustavo Cançado, Luiz [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil); Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970 (Brazil); Winston, Donald [Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 (United States); Miao, Feng [Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 (United States); National Laboratory of Solid State Microstructures, School of Physics, National Center of Microstructures and Quantum Manipulation, Nanjing University, Nanjing 210093 (China); Alberto Achete, Carlos [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil); Departamento de Engenharia Metalúrgica e de Materiais, Universidade Federal do Rio de janeiro, Rio de Janeiro RJ 21941-972 (Brazil); Medeiros-Ribeiro, Gilberto [Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970 (Brazil); Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 (United States)

2014-05-12

Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

Displacement Talbot lithography: an alternative technique to fabricate nanostructured metamaterials

Science.gov (United States)

Le Boulbar, E. D.; Chausse, P. J. P.; Lis, S.; Shields, P. A.

2017-06-01

Nanostructured materials are essential for many recent electronic, magnetic and optical devices. Lithography is the most common step used to fabricate organized and well calibrated nanostructures. However, feature sizes less than 200 nm usually require access to deep ultraviolet photolithography, e-beam lithography or soft lithography (nanoimprinting), which are either expensive, have low-throughput or are sensitive to defects. Low-cost, high-throughput and low-defect-density techniques are therefore of interest for the fabrication of nanostructures. In this study, we investigate the potential of displacement Talbot lithography for the fabrication of specific structures of interest within plasmonic and metamaterial research fields. We demonstrate that nanodash arrays and `fishnet'-like structures can be fabricated by using a double exposure of two different linear grating phase masks. Feature sizes can be tuned by varying the exposure doses. Such lithography has been used to fabricate metallic `fishnet'-like structures using a lift-off technique. This proof of principle paves the way to a low-cost, high-throughput, defect-free and large-scale technique for the fabrication of structures that could be useful for metamaterial and plasmonic metasurfaces. With the development of deep ultraviolet displacement Talbot lithography, the feature dimensions could be pushed lower and used for the fabrication of optical metamaterials in the visible range.

Print-to-pattern dry film photoresist lithography

International Nuclear Information System (INIS)

Garland, Shaun P; Murphy, Terrence M Jr; Pan, Tingrui

2014-01-01

Here we present facile microfabrication processes, referred to as print-to-pattern dry film photoresist (DFP) lithography, that utilize the combined advantages of wax printing and DFP to produce micropatterned substrates with high resolution over a large surface area in a non-cleanroom setting. The print-to-pattern methods can be performed in an out-of-cleanroom environment making microfabrication much more accessible to minimally equipped laboratories. Two different approaches employing either wax photomasks or wax etchmasks from a solid ink desktop printer have been demonstrated that allow the DFP to be processed in a negative tone or positive tone fashion, respectively, with resolutions of 100 µm. The effect of wax melting on resolution and as a bonding material was also characterized. In addition, solid ink printers have the capacity to pattern large areas with high resolution, which was demonstrated by stacking DFP layers in a 50 mm × 50 mm woven pattern with 1 mm features. By using an office printer to generate the masking patterns, the mask designs can be easily altered in a graphic user interface to enable rapid prototyping. (technical note)

Low cost ESR based X-ray beamline for lithography experimentation

Energy Technology Data Exchange (ETDEWEB)

Kovacs, S.; Doumas, A.; Truncale, M. (Grumman Corp., Bethpage, NY (United States). Space and Electronics Div.)

1992-08-01

Any application of the electron storage ring (ESR) based X-ray lithography technology requires an X-ray radiation transport system to transfer the synchrotron radiation into a spectrum defined by the lithography process requirements. Structure of this transport system (i.e. the beamline) depends on the nature of the application. In this paper a beamline conceptual design will be discussed. The beamline is intended for the developmment of X-ray lithography technology. (orig.).

Interference Lithography for Vertical Photovoltaics

Science.gov (United States)

Balls, Amy; Pei, Lei; Kvavle, Joshua; Sieler, Andrew; Schultz, Stephen; Linford, Matthew; Vanfleet, Richard; Davis, Robert

2009-10-01

We are exploring low cost approaches for fabricating three dimensional nanoscale structures. These vertical structures could significantly improve the efficiency of devices made from low cost photovoltaic materials. The nanoscale vertical structure provides a way to increase optical absorption in thin photovoltaic films without increasing the electronic carrier separation distance. The target structure is a high temperature transparent template with a dense array of holes on a 400 - 600 nm pitch fabricated by a combination of interference lithography and nanoembossing. First a master was fabricated using ultraviolet light interference lithography and the pattern was transferred into a silicon wafer master by silicon reactive ion etching. Embossing studies were performed with the master on several high temperature polymers.

Reverse-contact UV nanoimprint lithography for multilayered structure fabrication

International Nuclear Information System (INIS)

Kehagias, N; Reboud, V; Chansin, G; Zelsmann, M; Jeppesen, C; Schuster, C; Kubenz, M; Reuther, F; Gruetzner, G; Torres, C M Sotomayor

2007-01-01

In this paper, we report results on a newly developed nanofabrication technique, namely reverse-contact UV nanoimprint lithography. This technique is a combination of nanoimprint lithography and contact printing lithography. In this process, a lift-off resist and a UV cross-linkable polymer are spin-coated successively onto a patterned UV mask-mould. These thin polymer films are then transferred from the mould to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light. After separation of the mould and the substrate, the unexposed polymer areas are dissolved in a developer solution leaving behind the negative features of the original stamp. This method delivers resist pattern transfer without a residual layer, thereby rending unnecessary the etching steps typically needed in the imprint lithography techniques for three-dimensional patterning. Three-dimensional woodpile-like structures were successfully fabricated with this new technique

Lithography for enabling advances in integrated circuits and devices.

Science.gov (United States)

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

Compact synchrotron radiation depth lithography facility

Science.gov (United States)

Knüppel, O.; Kadereit, D.; Neff, B.; Hormes, J.

1992-01-01

X-ray depth lithography allows the fabrication of plastic microstructures with heights of up to 1 mm but with the smallest possible lateral dimensions of about 1 μm. A resist is irradiated with ``white'' synchrotron radiation through a mask that is partially covered with x-ray absorbing microstructures. The plastic microstructure is then obtained by a subsequent chemical development of the irradiated resist. In order to irradiate a reasonably large resist area, the mask and the resist have to be ``scanned'' across the vertically thin beam of the synchrotron radiation. A flexible, nonexpensive and compact scanner apparatus has been built for x-ray depth lithography at the beamline BN1 at ELSA (the 3.5 GeV Electron Stretcher and Accelerator at the Physikalisches Institut of Bonn University). Measurements with an electronic water level showed that the apparatus limits the scanner-induced structure precision to not more than 0.02 μm. The whole apparatus is installed in a vacuum chamber thus allowing lithography under different process gases and pressures.

Construction and operation of a support facilities (Building 729) for operation/testing of a prototype accelerator/storage ring (XLS) and machine shop for the National Synchrotron Light Source at Brookhaven National Laboratory, Upton, New York

International Nuclear Information System (INIS)

1992-06-01

Proposed action is to construct at BNL a 5,600-ft 2 support building, install and operate a prototypic 200 MeV accelerator and a prototypic 700 MeV storage ring within, and to construct and operate a 15 kV substation to power the building. The accelerator and storage ring would comprise the x-ray lithography source or XLS

Workshop on compact storage ring technology: applications to lithography

International Nuclear Information System (INIS)

1986-01-01

Project planning in the area of x-ray lithography is discussed. Three technologies that are emphasized are the light source, the lithographic technology, and masking technology. The needs of the semiconductor industry in the lithography area during the next decade are discussed, particularly as regards large scale production of high density dynamic random access memory devices. Storage ring parameters and an overall exposure tool for x-ray lithography are addressed. Competition in this area of technology from Germany and Japan is discussed briefly. The design of a storage ring is considered, including lattice design, magnets, and beam injection systems

Applications of Cold Cathode PIG Ion Source in Lithography

International Nuclear Information System (INIS)

Bassal, N.I.

2012-01-01

The cold cathode Penning ion source (PIG) of axial type could be modified to produce ion and electron beam with a considerable amount to use it in the lithography process. Lithography is a new applications of ion/electron beam at which one can use the ion/ or electron beam as a pencil to write and draw on a metal surface. The electron beam takes 1/3 the time needed for ion beam to make good picture. So that with the help of ion/or electron beam lithography one can mark tools, parts, instruments, and equipment with names, numbers, designs, trademark or brand name in few seconds. It is an easy process, quick and an inexpensive method. Firstly, operating characteristics of this ion source is studied. Lithography application of ion source with optimum conditions is done. Later, the hardness and the tensile strength is measured and each of them increases with increasing time

Optical characterisation of photonic wire and photonic crystal waveguides fabricated using nanoimprint lithography

DEFF Research Database (Denmark)

Borel, Peter Ingo; Frandsen, Lars Hagedorn; Lavrinenko, Andrei

2006-01-01

We have characterised photonic-crystal and photonic-wire waveguides fabricated by thermal nanoimprint lithography. The structures, with feature sizes down below 20 nm, are benchmarked against similar structures defined by direct electron beam lithography.......We have characterised photonic-crystal and photonic-wire waveguides fabricated by thermal nanoimprint lithography. The structures, with feature sizes down below 20 nm, are benchmarked against similar structures defined by direct electron beam lithography....

Protein assay structured on paper by using lithography

Science.gov (United States)

Wilhelm, E.; Nargang, T. M.; Al Bitar, W.; Waterkotte, B.; Rapp, B. E.

2015-03-01

There are two main challenges in producing a robust, paper-based analytical device. The first one is to create a hydrophobic barrier which unlike the commonly used wax barriers does not break if the paper is bent. The second one is the creation of the (bio-)specific sensing layer. For this proteins have to be immobilized without diminishing their activity. We solve both problems using light-based fabrication methods that enable fast, efficient manufacturing of paper-based analytical devices. The first technique relies on silanization by which we create a flexible hydrophobic barrier made of dimethoxydimethylsilane. The second technique demonstrated within this paper uses photobleaching to immobilize proteins by means of maskless projection lithography. Both techniques have been tested on a classical lithography setup using printed toner masks and on a lithography system for maskless lithography. Using these setups we could demonstrate that the proposed manufacturing techniques can be carried out at low costs. The resolution of the paper-based analytical devices obtained with static masks was lower due to the lower mask resolution. Better results were obtained using advanced lithography equipment. By doing so we demonstrated, that our technique enables fabrication of effective hydrophobic boundary layers with a thickness of only 342 μm. Furthermore we showed that flourescine-5-biotin can be immobilized on the non-structured paper and be employed for the detection of streptavidinalkaline phosphatase. By carrying out this assay on a paper-based analytical device which had been structured using the silanization technique we proofed biological compatibility of the suggested patterning technique.

Investigation of the AZ 5214E photoresist by the laser interference, EBDW and NSOM lithographies

Energy Technology Data Exchange (ETDEWEB)

Škriniarová, J., E-mail: jaroslava.skriniarova@stuba.sk [Institute of Electronics and Photonics, Slovak University of Technology, Bratislava (Slovakia); Pudiš, D. [Department of Physics, University of Žilina, Žilina (Slovakia); Andok, R. [Department of E-Beam Lithography, Institute of Informatics, Slovak Academy of Sciences, Bratislava (Slovakia); Lettrichová, I. [Department of Physics, University of Žilina, Žilina (Slovakia); Uherek, F. [Institute of Electronics and Photonics, Slovak University of Technology, Bratislava (Slovakia)

2017-02-15

Highlights: • Applicability of the AZ 5214E photoresist for three different lithographies. • Useful for the fabrication of 1D and 2D periodic and irregular structures. • 2D structures with 260 nm period achieved by the laser interference lithography. • Structures with period below 500 nm achieved with the e-beam direct-write lithography. • Holes of 270 nm diameter made by the near-field scanning optical microscopy lithography. - Abstract: In this paper we show a comparison of chosen lithographies used for the AZ 5214E photoresist, which is normally UV sensitive but has also been investigated for its sensitivity to e-beam exposure. Three lithographies, the E-Beam Direct Write lithography (EBDW), laser Interference Lithography (IL) and the non-contact Near-field Scanning Optical Microscopy (NSOM) lithography, are discussed here and the results on exposed arrays of simple patterns are shown. With the EBDW and IL we achieved periods of the structures around half-micron, and we demonstrate attainability of dimensions smaller or comparable than usually achieved by a standard optical photolithography with the investigated photoresist. With the non-contact NSOM lithography structures with periods slightly above a micron were achieved.

32nm 1-D regular pitch SRAM bitcell design for interference-assisted lithography

Science.gov (United States)

Greenway, Robert T.; Jeong, Kwangok; Kahng, Andrew B.; Park, Chul-Hong; Petersen, John S.

2008-10-01

As optical lithography advances into the 45nm technology node and beyond, new manufacturing-aware design requirements have emerged. We address layout design for interference-assisted lithography (IAL), a double exposure method that combines maskless interference lithography (IL) and projection lithography (PL); cf. hybrid optical maskless lithography (HOMA) in [2] and [3]. Since IL can generate dense but regular pitch patterns, a key challenge to deployment of IAL is the conversion of existing designs to regular-linewidth, regular-pitch layouts. In this paper, we propose new 1-D regular pitch SRAM bitcell layouts which are amenable to IAL. We evaluate the feasibility of our bitcell designs via lithography simulations and circuit simulations, and confirm that the proposed bitcells can be successfully printed by IAL and that their electrical characteristics are comparable to those of existing bitcells.

Nanoimprint lithography for microfluidics manufacturing

Science.gov (United States)

Kreindl, Gerald; Matthias, Thorsten

2013-12-01

The history of imprint technology as lithography method for pattern replication can be traced back to 1970's but the most significant progress has been made by the research group of S. Chou in the 1990's. Since then, it has become a popular technique with a rapidly growing interest from both research and industrial sides and a variety of new approaches have been proposed along the mainstream scientific advances. Nanoimprint lithography (NIL) is a novel method for the fabrication of micro/nanometer scale patterns with low cost, high throughput and high resolution. Unlike traditional optical lithographic approaches, which create pattern through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the resist and can therefore achieve resolutions beyond the limitations set by light diffraction or beam scattering that are encountered in conventional lithographic techniques. The ability to fabricate structures from the micro- to the nanoscale with high precision in a wide variety of materials is of crucial importance to the advancement of micro- and nanotechnology and the biotech- sciences as a whole and will be discussed in this paper. Nanoimprinting can not only create resist patterns, as in lithography, but can also imprint functional device structures in various polymers, which can lead to a wide range of applications in electronics, photonics, data storage, and biotechnology.

Roll-to-roll UV imprint lithography for flexible electronics

NARCIS (Netherlands)

Maury, P.; Turkenburg, D.H.; Stroeks, N.; Giesen, P.; Barbu, I.; Meinders, E.R.; Bremen, A. van; Iosad, N.; Werf, R. van der; Onvlee, H.

2011-01-01

We propose a roll-to-roll UV imprint lithography tool as a way to pattern flexible PET foil with µm-resolution. As a way to overcome dimensional instability of the foil and its effect on overlay, a self-align approach was investigated, that permits to make several layers in a single lithography

Electron beam and mechanical lithographies as enabling factors for organic-based device fabrication

International Nuclear Information System (INIS)

Visconti, P.; Pisignano, D.; Della Torre, A.; Persano, L.; Maruccio, G.; Biasco, A.; Cingolani, R.; Rinaldi, R.

2005-01-01

Organic-based photonics and molecular electronics are attracting an increasing interest in modern science. The realization of high-resolution master structures by electron beam lithography (EBL) and their transfer to different organic functional materials by mechanical lithographies allow to fully exploit the wide flexibility of molecular systems for opto- and nanoelectronic devices. Planar nanojunctions, consisting of two metallic electrodes separated by an insulating medium, permit to test the molecular conduction properties. Since the typical size of a biomolecule is of the order of a few nanometer, hybrid molecular electronic (HME) devices need metallic electrodes separated by a nanometer-scale channel. Conversely, photonic applications often require 100 nm to 1 μm features on large areas. In this work, we report on the fabrication of both large-area periodic master structures with resolution down to 200 nm, and planar metallic electrodes with sub-10 nm separation obtained by EBL followed by metal electroplating deposition. The fabricated 3-terminal bio-nanodevices show a transistor-like behaviour with a maximum voltage gain of 0.76. Moreover, we developed a number of mechanical patterning methods, including soft hot embossing, rapid prototyping, sub-micrometer fluidics, high- and room-temperature nanoimprinting, to fabricate planar nanostructures on both biomolecular and organic materials. These allowed us a high-fidelity pattern transfer up to 100-nm scale resolution, without reducing the emission yields of light-emitting organics, thus opening the way to the one-step realization of organic-based confined optoelectronic devices

Nano lithography

CERN Document Server

Landis, Stefan

2013-01-01

Lithography is an extremely complex tool - based on the concept of "imprinting" an original template version onto mass output - originally using relatively simple optical exposure, masking, and etching techniques, and now extended to include exposure to X-rays, high energy UV light, and electron beams - in processes developed to manufacture everyday products including those in the realms of consumer electronics, telecommunications, entertainment, and transportation, to name but a few. In the last few years, researchers and engineers have pushed the envelope of fields including optics, physics,

Fabrication of Monolithic Bridge Structures by Vacuum-Assisted Capillary-Force Lithography

KAUST Repository

Kwak, Rhokyun; Jeong, Hoon Eui; Suh, Kahp Y.

2009-01-01

Monolithic bridge structures were fabricated by using capillary-force lithography (CFL), which was developed for patterning polymers over a large area by combining essential features of nanoimprint lithography and capillarity. A patterned soft mold

Electron Beam Lithography for nano-patterning

DEFF Research Database (Denmark)

Greibe, Tine; Anhøj, Thomas Aarøe; Khomtchenko, Elena

2014-01-01

in a polymer. Electron beam lithography is a suitable method for nano-sized production, research, or development of semiconductor components on a low-volume level. Here, we present electron beam lithography available at DTU Danchip. We expertize a JEOL 9500FZ with electrons accelerated to an energy of 100ke......, the room temperature is controlled to an accuracy of 0.1 degrees in order to minimize the thermally induced drift of the beam during pattern writing. We present process results in a standard positive tone resist and pattern transfer through etch to a Silicon substrate. Even though the electron beam...... of electrons in the substrate will influence the patterning. We present solutions to overcome these obstacles....

Electron-beam lithography

International Nuclear Information System (INIS)

Harriott, L.; Liddle, A.

1997-01-01

As part of a commemorative series of articles to mark the hundredth anniversary of the discovery of the electron, this article describes the use of electron beams to write features on silicon wafers. Recent advances in electron beam lithography, as it is known, could enable this technology to be used for the mass manufacture of silicon chips. The validation of space-charge optimization and evaluation of printing techniques is underway. (UK)

Hybrid UV Lithography for 3D High-Aspect-Ratio Microstructures

Energy Technology Data Exchange (ETDEWEB)

Park, Sungmin; Nam, Gyungmok; Kim, Jonghun; Yoon, Sang-Hee [Inha Univ, Incheon (Korea, Republic of)

2016-08-15

Three-dimensional (3D) high-aspect-ratio (HAR) microstructures for biomedical applications (e.g., microneedle, microadhesive, etc.) are microfabricated using the hybrid ultraviolet (UV) lithography in which inclined, rotational, and reverse-side UV exposure processes are combined together. The inclined and rotational UV exposure processes are intended to fabricate tapered axisymmetric HAR microstructures; the reverse-side UV exposure process is designed to sharpen the end tip of the microstructures by suppressing the UV reflection on a bottom substrate which is inevitable in conventional UV lithography. Hybrid UV lithography involves fabricating 3D HAR microstructures with an epoxy-based negative photoresist, SU-8, using our customized UV exposure system. The effects of hybrid UV lithography parameters on the geometry of the 3D HAR microstructures (aspect ratio, radius of curvature of the end tip, etc.) are measured. The dependence of the end-tip shape on SU-8 soft-baking condition is also discussed.

Hybrid UV Lithography for 3D High-Aspect-Ratio Microstructures

International Nuclear Information System (INIS)

Park, Sungmin; Nam, Gyungmok; Kim, Jonghun; Yoon, Sang-Hee

2016-01-01

Three-dimensional (3D) high-aspect-ratio (HAR) microstructures for biomedical applications (e.g., microneedle, microadhesive, etc.) are microfabricated using the hybrid ultraviolet (UV) lithography in which inclined, rotational, and reverse-side UV exposure processes are combined together. The inclined and rotational UV exposure processes are intended to fabricate tapered axisymmetric HAR microstructures; the reverse-side UV exposure process is designed to sharpen the end tip of the microstructures by suppressing the UV reflection on a bottom substrate which is inevitable in conventional UV lithography. Hybrid UV lithography involves fabricating 3D HAR microstructures with an epoxy-based negative photoresist, SU-8, using our customized UV exposure system. The effects of hybrid UV lithography parameters on the geometry of the 3D HAR microstructures (aspect ratio, radius of curvature of the end tip, etc.) are measured. The dependence of the end-tip shape on SU-8 soft-baking condition is also discussed

Development of Blue Laser Direct-Write Lithography System

Directory of Open Access Journals (Sweden)

Hao-Wen Chang

2012-01-01

Full Text Available The optical lithography system researched in this study adopted the laser direct-write lithography technology with nano-positioning stage by using retailing blue ray optical pickup head contained 405nm wavelength and 0.85 numerical aperture of focus lens as the system lighting source. The system employed a photodiode received the focusing error signal reflected by the glass substrate to identify specimen position and automatic focused control with voice coil motor. The pattern substrate was loaded on a nano-positioning stage; input pattern path automatically and collocate with inner program at the same time. This research has successfully developed a blue laser lithography process system. The single spot size can be narrowed down to 3.07 μm and the linewidth is 3.3μm, time of laser control can reach to 450 ns and the exposure pattern can be controlled by program as well.

Solvent-vapor-assisted imprint lithography

NARCIS (Netherlands)

Voicu, Nicoleta E.; Ludwigs, Sabine; Crossland, Edward J. W.; Andrew, Piers; Steiner, Ullrich

2007-01-01

Sub-micrometer features are replicated into high-molecular-weight polymer resists by using solvent-assisted nanoimprint lithography (see figure). By swelling the polymer in a controlled solvent-vapor atmosphere, millibar pressures and ambient temperatures are sufficient to achieve high-fidelity

A compact SR light source for x-ray lithography 'AURORA'

International Nuclear Information System (INIS)

Toba, Y.

1990-01-01

A compact synchrotron radiation (SR) light source called AURORA has been developed for industrial use. It is specially designed for X-ray lithography. AURORA consists of a storage ring, injector microtron and SR light beam lines. The storage ring is a superconducting single magnet machine, designed to accelerate a 150 MeV electron beam to 650 MeV and to store as high as 300 mA current. The injector is a racetrack microtron (RTM) producing a pulsed 150 MeV beam. As many as 16 SR light beam channels are available for AURORA. Prototypes of the storage ring and RTM are constructed, and beam commissioning is performed. A hundred and fifty MeV electron beam of a pulsed current 10 μA from the RTM is successfully injected to the ring and accelerated to 600 MeV and 10 mA current stored with a lifetime of more than 20 hours. The half-integer method investigated is shown to work well with the injection efficiency being found to be very high. Improvement of the design is now under way. (N.K.)

Electron beam lithography

International Nuclear Information System (INIS)

Harriott, L.; Liddle, A.

1997-01-01

As part of a commemorative series of articles to mark the hundredth anniversary of the discovery of the electron, this article describes the use of electron beams to write features on silicon wafers. Recent advances in electron beam lithography, as it is known, could enable this technology to be used for the mass manufacture of silicon chips. The validation of space-charge optimization and evaluation of printing techniques is underway. 5 figs

Mask-induced aberration in EUV lithography

Science.gov (United States)

Nakajima, Yumi; Sato, Takashi; Inanami, Ryoichi; Nakasugi, Tetsuro; Higashiki, Tatsuhiko

2009-04-01

We estimated aberrations using Zernike sensitivity analysis. We found the difference of the tolerated aberration with line direction for illumination. The tolerated aberration of perpendicular line for illumination is much smaller than that of parallel line. We consider this difference to be attributable to the mask 3D effect. We call it mask-induced aberration. In the case of the perpendicular line for illumination, there was a difference in CD between right line and left line without aberration. In this report, we discuss the possibility of pattern formation in NA 0.25 generation EUV lithography tool. In perpendicular pattern for EUV light, the dominant part of aberration is mask-induced aberration. In EUV lithography, pattern correction based on the mask topography effect will be more important.

Image-projection ion-beam lithography

International Nuclear Information System (INIS)

Miller, P.A.

1989-01-01

Image-projection ion-beam lithography is an attractive alternative for submicron patterning because it may provide high throughput; it uses demagnification to gain advantages in reticle fabrication, inspection, and lifetime; and it enjoys the precise deposition characteristics of ions which cause essentially no collateral damage. This lithographic option involves extracting low-mass ions (e.g., He + ) from a plasma source, transmitting the ions at low voltage through a stencil reticle, and then accelerating and focusing the ions electrostatically onto a resist-coated wafer. While the advantages of this technology have been demonstrated experimentally by the work of IMS (Austria), many difficulties still impede extension of the technology to the high-volume production of microelectronic devices. We report a computational study of a lithography system designed to address problem areas in field size, telecentricity, and chromatic and geometric aberration. We present a novel ion-column-design approach and conceptual ion-source and column designs which address these issues. We find that image-projection ion-beam technology should in principle meet high-volume-production requirements. The technical success of our present relatively compact-column design requires that a glow-discharge-based ion source (or equivalent cold source) be developed and that moderate further improvement in geometric aberration levels be obtained. Our system requires that image predistortion be employed during reticle fabrication to overcome distortion due to residual image nonlinearity and space-charge forces. This constitutes a software data preparation step, as do correcting for distortions in electron lithography columns and performing proximity-effect corrections. Areas needing further fundamental work are identified

Controllable liquid colour-changing lenses with microfluidic channels for vision protection, camouflage and optical filtering based on soft lithography fabrication.

Science.gov (United States)

Zhang, Min; Li, Songjing

2016-01-01

In this work, liquid colour-changing lenses for vision protection, camouflage and optical filtering are developed by circulating colour liquids through microfluidic channels on the lenses manually. Soft lithography technology is applied to fabricate the silicone liquid colour-changing layers with microfluidic channels on the lenses instead of mechanical machining. To increase the hardness and abrasion resistance of the silicone colour-changing layers on the lenses, proper fabrication parameters such as 6:1 (mass ration) mixing proportion and 100 °C curing temperature for 2 h are approved for better soft lithography process of the lenses. Meanwhile, a new surface treatment for the irreversible bonding of silicone colour-changing layer with optical resin (CR39) substrate lens by using 5 % (volume ratio) 3-Aminopropyltriethoxysilane solution is proposed. Vision protection, camouflage and optical filtering functions of the lenses are investigated with different designs of the channels and multi-layer structures. Each application can not only well achieve their functional demands, but also shows the advantages of functional flexibility, rapid prototyping and good controllability compared with traditional ways. Besides optometry, some other designs and applications of the lenses are proposed for potential utility in the future.

The partial coherence modulation transfer function in testing lithography lens

Science.gov (United States)

Huang, Jiun-Woei

2018-03-01

Due to the lithography demanding high performance in projection of semiconductor mask to wafer, the lens has to be almost free in spherical and coma aberration, thus, in situ optical testing for diagnosis of lens performance has to be established to verify the performance and to provide the suggesting for further improvement of the lens, before the lens has been build and integrated with light source. The measurement of modulation transfer function of critical dimension (CD) is main performance parameter to evaluate the line width of semiconductor platform fabricating ability for the smallest line width of producing tiny integrated circuits. Although the modulation transfer function (MTF) has been popularly used to evaluation the optical system, but in lithography, the contrast of each line-pair is in one dimension or two dimensions, analytically, while the lens stand along in the test bench integrated with the light source coherent or near coherent for the small dimension near the optical diffraction limit, the MTF is not only contributed by the lens, also by illumination of platform. In the study, the partial coherence modulation transfer function (PCMTF) for testing a lithography lens is suggested by measuring MTF in the high spatial frequency of in situ lithography lens, blended with the illumination of partial and in coherent light source. PCMTF can be one of measurement to evaluate the imperfect lens of lithography lens for further improvement in lens performance.

EB and EUV lithography using inedible cellulose-based biomass resist material

Science.gov (United States)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2016-03-01

The validity of our approach of inedible cellulose-based resist material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass resist material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass resist material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass resist material.

Synchrotron radiation sources and condensers for projection x-ray lithography

International Nuclear Information System (INIS)

Murphy, J.B.; MacDowell, A.A.; White, D.L.; Wood, O.R. II

1992-01-01

The design requirements for a compact electron storage ring that could be used as a soft x-ray source for projection lithography are discussed. The design concepts of the x-ray optics that are required to collect and condition the radiation in divergence, uniformity and direction to properly illuminate the mask and the particular x-ray projection camera used are discussed. Preliminary designs for an entire soft x-ray projection lithography system using an electron storage ring as a soft X-ray source are presented. It is shown that by combining the existing technology of storage rings with large collection angle condensers, a powerful and reliable source of 130 Angstrom photons for production line projection x-ray lithography is possible

Interference lithography for optical devices and coatings

Science.gov (United States)

Juhl, Abigail Therese

Interference lithography can create large-area, defect-free nanostructures with unique optical properties. In this thesis, interference lithography will be utilized to create photonic crystals for functional devices or coatings. For instance, typical lithographic processing techniques were used to create 1, 2 and 3 dimensional photonic crystals in SU8 photoresist. These structures were in-filled with birefringent liquid crystal to make active devices, and the orientation of the liquid crystal directors within the SU8 matrix was studied. Most of this thesis will be focused on utilizing polymerization induced phase separation as a single-step method for fabrication by interference lithography. For example, layered polymer/nanoparticle composites have been created through the one-step two-beam interference lithographic exposure of a dispersion of 25 and 50 nm silica particles within a photopolymerizable mixture at a wavelength of 532 nm. In the areas of constructive interference, the monomer begins to polymerize via a free-radical process and concurrently the nanoparticles move into the regions of destructive interference. The holographic exposure of the particles within the monomer resin offers a single-step method to anisotropically structure the nanoconstituents within a composite. A one-step holographic exposure was also used to fabricate self-healing coatings that use water from the environment to catalyze polymerization. Polymerization induced phase separation was used to sequester an isocyanate monomer within an acrylate matrix. Due to the periodic modulation of the index of refraction between the monomer and polymer, the coating can reflect a desired wavelength, allowing for tunable coloration. When the coating is scratched, polymerization of the liquid isocyanate is catalyzed by moisture in air; if the indices of the two polymers are matched, the coatings turn transparent after healing. Interference lithography offers a method of creating multifunctional self

The application of synchrotron radiation to X-ray lithography

International Nuclear Information System (INIS)

Spiller, E.; Eastman, D.E.; Feder, R.; Grobman, W.D.; Gudat, W.; Topalian, J.

1976-06-01

Synchrotron radiation from the German electron synchrotron DESY in Hamburg has been used for X-ray lithograpgy. Replications of different master patterns (for magnetic bubble devices, fresnel zone plates, etc.) were made using various wavelengths and exposures. High quality lines down to 500 A wide have been reproduced using very soft X-rays. The sensitivities of X-ray resists have been evaluated over a wide range of exposures. Various critical factors (heating, radiation damage, etc.) involved with X-ray lithography using synchrotron radiation have been studied. General considerations of storage ring sources designed as radiation sources for X-ray lithography are discussed, together with a comparison with X-ray tube sources. The general conclusion is that X-ray lithography using synchrotron radiation offers considerable promise as a process for forming high quality sub-micron images with exposure times as short as a few seconds. (orig.) [de

Computer numerical control (CNC) lithography: light-motion synchronized UV-LED lithography for 3D microfabrication

International Nuclear Information System (INIS)

Kim, Jungkwun; Allen, Mark G; Yoon, Yong-Kyu

2016-01-01

This paper presents a computer-numerical-controlled ultraviolet light-emitting diode (CNC UV-LED) lithography scheme for three-dimensional (3D) microfabrication. The CNC lithography scheme utilizes sequential multi-angled UV light exposures along with a synchronized switchable UV light source to create arbitrary 3D light traces, which are transferred into the photosensitive resist. The system comprises a switchable, movable UV-LED array as a light source, a motorized tilt-rotational sample holder, and a computer-control unit. System operation is such that the tilt-rotational sample holder moves in a pre-programmed routine, and the UV-LED is illuminated only at desired positions of the sample holder during the desired time period, enabling the formation of complex 3D microstructures. This facilitates easy fabrication of complex 3D structures, which otherwise would have required multiple manual exposure steps as in the previous multidirectional 3D UV lithography approach. Since it is batch processed, processing time is far less than that of the 3D printing approach at the expense of some reduction in the degree of achievable 3D structure complexity. In order to produce uniform light intensity from the arrayed LED light source, the UV-LED array stage has been kept rotating during exposure. UV-LED 3D fabrication capability was demonstrated through a plurality of complex structures such as V-shaped micropillars, micropanels, a micro-‘hi’ structure, a micro-‘cat’s claw,’ a micro-‘horn,’ a micro-‘calla lily,’ a micro-‘cowboy’s hat,’ and a micro-‘table napkin’ array. (paper)

Functionalized SU-8 patterned with X-ray Lithography

DEFF Research Database (Denmark)

Balslev, Søren; Romanato, F.

2005-01-01

spontaneous emission light source that couples out light normal to the chip plane. In addition we examine the influence of the x-ray irradiation on the fluorescence of thin films of dye doped SU-8. The dye embedded in the SU-8 is optically excited during, characterization by an external light source tuned......In this work we demonstrate the feasibility of x-ray lithography on SU-8 photoresist doped with the laser dye Rhodamine 6G, while retaining the photoactive properties of the embedded dye. Two kinds of structures are fabricated via soft x-ray lithography and characterized: a laser and in amplified...

Challenges of anamorphic high-NA lithography and mask making

Science.gov (United States)

Hsu, Stephen D.; Liu, Jingjing

2017-06-01

Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are starting to investigate patterning options beyond the 5-nm node (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022). To minimize the cost and process complexity of multiple patterning beyond the 5-nm node, EUV high-NA single-exposure patterning is a preferred method over EUV double patterning (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022; J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150). The EUV high-NA scanner equipped with a projection lens of 0.55 NA is designed to support resolutions below 10 nm. The high-NA system is beneficial for enhancing resolution, minimizing mask proximity correction bias, improving normalized image log slope (NILS), and controlling CD uniformity (CDU). However, increasing NA from 0.33 to 0.55 reduces the depth of focus (DOF) significantly. Therefore, the source mask optimization (SMO) with sub-resolution assist features (SRAFs) are needed to increase DOF to meet the demanding full chip process control requirements (S. Hsu, R. Howell, J. Jia, H.-Y. Liu, K. Gronlund, et al., EUV `Proc. SPIE9048, Extreme Ultraviolet (EUV) Lithography VI', (2015) doi: 10

Helium ion lithography principles and performance

NARCIS (Netherlands)

Drift, E. van der; Maas, D.J.

2012-01-01

Recent developments show that Scanning Helium Ion Beam Lithography (SHIBL) with a sub-nanometer beam diameter is a promising alternative fabrication technique for high-resolution nanostructures at high pattern densities. Key principles and critical conditions of the technique are explained. From

Submicron three-dimensional structures fabricated by reverse contact UV nanoimprint lithography

DEFF Research Database (Denmark)

Kehagias, N.; Reboud, Vincent; Chansin, G.

2006-01-01

The fabrication of a three-dimensional multilayered nanostructure is demonstrated with a newly developed nanofabrication technique, namely, reverse contact ultraviolet nanoimprint lithography. This technique is a combination of reverse nanoimprint lithography and contact ultraviolet lithography....... In this process, a UV cross-linkable polymer and a thermoplastic polymer are spin coated onto a patterned hybrid metal-quartz stamp. These thin polymer films are then transferred from the stamp to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light....... After separation of the stamp and the substrate, the unexposed polymer areas are rinsed away with acetone leaving behind the negative features of the original stamp with no residual layer....

DWDM laser arrays fabricated using thermal nanoimprint lithography on Indium Phosphide substrates

DEFF Research Database (Denmark)

Smistrup, K.; Nørregaard, J.; Mironov, A.

2013-01-01

by including a lambda quarter shift at the center of the grating. The need for phase shifts and multiple wavelengths eliminates some lithography methods such as holography. Typically, these lasers are produced by e-beam lithography (EBL). We present a production method based on thermal nanoimprint lithography...... during the imprint process and the narrow temperature window for imprint and separation (80°C and 55°C) ensures minimal issues with thermal mismatch between the InP substrate and the Si stamp. The imprinted InP wafers were processed in NeoPhotonics standard process line to create working lasers...

Table-top deterministic and collective colloidal assembly using videoprojector lithography

International Nuclear Information System (INIS)

Cordeiro, J.; Zelsmann, M.; Honegger, T.; Picard, E.; Hadji, E.; Peyrade, D.

2015-01-01

Graphical abstract: - Highlights: • Micrometric resolution substrates are made at low cost using a videoprojector. • Fabricated patterns could be used as substrates for capillary force assembly. • Arrays of organized particles are made using a table-top capillary assembly tool. • This process offers a new bridge between the colloidal domain and the chip world. - Abstract: In the field of micro- and nanotechnology, most lithography and fabrication tools coming from the microelectronic industry are expensive, time-consuming and may need some masks that have to be subcontracted. Such approach is not suitable for other fields that require rapid prototyping such as chemistry, life science or energy and may hinder research creativity. In this work, we present two table-top equipments dedicated to the fabrication of deterministic colloidal particles assemblies onto micro-structured substrates. We show that, with a limited modification of the optics of a standard videoprojector, it is possible to quickly obtain substrates with thousands of micrometric features. Then, we combine these substrates with thermodynamic colloidal assembly and generate arrays of particles without defects. This work opens the way to a simple and table-top fabrication of devices based on colloidal particles

Table-top deterministic and collective colloidal assembly using videoprojector lithography

Energy Technology Data Exchange (ETDEWEB)

Cordeiro, J. [Univ Grenoble Alpes, F-38000 Grenoble (France); CNRS, LTM, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38000 Grenoble (France); Zelsmann, M., E-mail: marc.zelsmann@cea.fr [Univ Grenoble Alpes, F-38000 Grenoble (France); CNRS, LTM, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38000 Grenoble (France); Honegger, T. [Univ Grenoble Alpes, F-38000 Grenoble (France); CNRS, LTM, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38000 Grenoble (France); Picard, E.; Hadji, E. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, INAC-SP2M, F-38000 Grenoble (France); Peyrade, D. [Univ Grenoble Alpes, F-38000 Grenoble (France); CNRS, LTM, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38000 Grenoble (France)

2015-09-15

Graphical abstract: - Highlights: • Micrometric resolution substrates are made at low cost using a videoprojector. • Fabricated patterns could be used as substrates for capillary force assembly. • Arrays of organized particles are made using a table-top capillary assembly tool. • This process offers a new bridge between the colloidal domain and the chip world. - Abstract: In the field of micro- and nanotechnology, most lithography and fabrication tools coming from the microelectronic industry are expensive, time-consuming and may need some masks that have to be subcontracted. Such approach is not suitable for other fields that require rapid prototyping such as chemistry, life science or energy and may hinder research creativity. In this work, we present two table-top equipments dedicated to the fabrication of deterministic colloidal particles assemblies onto micro-structured substrates. We show that, with a limited modification of the optics of a standard videoprojector, it is possible to quickly obtain substrates with thousands of micrometric features. Then, we combine these substrates with thermodynamic colloidal assembly and generate arrays of particles without defects. This work opens the way to a simple and table-top fabrication of devices based on colloidal particles.

Plasmonic nanostructures fabricated using nanosphere-lithography, soft-lithography and plasma etching

Directory of Open Access Journals (Sweden)

Manuel R. Gonçalves

2011-08-01

Full Text Available We present two routes for the fabrication of plasmonic structures based on nanosphere lithography templates. One route makes use of soft-lithography to obtain arrays of epoxy resin hemispheres, which, in a second step, can be coated by metal films. The second uses the hexagonal array of triangular structures, obtained by evaporation of a metal film on top of colloidal crystals, as a mask for reactive ion etching (RIE of the substrate. In this way, the triangular patterns of the mask are transferred to the substrate through etched triangular pillars. Making an epoxy resin cast of the pillars, coated with metal films, allows us to invert the structure and obtain arrays of triangular holes within the metal. Both fabrication methods illustrate the preparation of large arrays of nanocavities within metal films at low cost.Gold films of different thicknesses were evaporated on top of hemispherical structures of epoxy resin with different radii, and the reflectance and transmittance were measured for optical wavelengths. Experimental results show that the reflectivity of coated hemispheres is lower than that of coated polystyrene spheres of the same size, for certain wavelength bands. The spectral position of these bands correlates with the size of the hemispheres. In contrast, etched structures on quartz coated with gold films exhibit low reflectance and transmittance values for all wavelengths measured. Low transmittance and reflectance indicate high absorbance, which can be utilized in experiments requiring light confinement.

Three techniques for the fabrication of high precision, mm-sized metal components based on two-photon lithography, applied for manufacturing horn antennas for THz transceivers

Science.gov (United States)

Standaert, Alexander; Brancato, Luigi; Lips, Bram; Ceyssens, Frederik; Puers, Robert; Reynaert, Patrick

2018-03-01

This paper proposes a novel packaging solution which integrates micro-machined 3D horn antennas with millimeter-wave and THz tranceivers. This packaging solution is shown to be a valid competitor to existing technologies like metallic split-block waveguides and low temperature cofired ceramics. Three different fabrication methods based on two-photon lithography are presented to form the horn antennas. The first uses two-photon lithography to form the bulk of the antenna. This structure is then metalised through physical vapor deposition (PVD) and copper plating. The second fabrication method makes use of a soft polydimethylsiloxane (PDMS) mold to easily replicate structures and the third method forms the horn antenna through electroforming. A prototype is accurately positioned on top of a 400 GHz 28 nm CMOS transmitter and glued in place with epoxy, thus providing a fully packaged solution. Measurement results show a 12 dB increase in the antenna gain when using the packaged solution. The fabrication processes are not limited to horn antennas alone and can be used to form a wide range of mm-sized metal components.

Imprint lithography: lab curiosity or the real NGL

Science.gov (United States)

Resnick, Douglas J.; Dauksher, William J.; Mancini, David P.; Nordquist, Kevin J.; Bailey, Todd C.; Johnson, Stephen C.; Stacey, Nicholas A.; Ekerdt, John G.; Willson, C. Grant; Sreenivasan, S. V.; Schumaker, Norman E.

2003-06-01

The escalating cost for Next Generation Lithography (NGL) tools is driven in part by the need for complex sources and optics. The cost for a single NGL tool could exceed $50M in the next few years, a prohibitive number for many companies. As a result, several researchers are looking at low cost alternative methods for printing sub-100 nm features. In the mid-1990s, several resarech groups started investigating different methods for imprinting small features. Many of these methods, although very effective at printing small features across an entire wafer, are limited in their ability to do precise overlay. In 1999, Willson and Sreenivasan discovered that imprinting could be done at low pressures and at room temperatures by using low viscosity UV curable monomers. The technology is typically referred to as Step and Flash Imprint Lithography. The use of a quartz template enabled the photocuring process to occur and also opened up the potential for optical alignment of teh wafer and template. This paper traces the development of nanoimprint lithography and addresses the issues that must be solved if this type of technology is to be applied to high-density silicon integrated circuitry.

Analysis of technology and development plan on Lithography process of display industry and semiconductor

International Nuclear Information System (INIS)

2005-02-01

This reports the seminar on Lithography in 2005, which includes these contents; Introduction of Lithography, equipment in NNFC, Exposure technology with fabrication, basic and application optics, RET and Lens aberrations, Alignment and Overlay and Metrology, Resist process with prime, mechanism, issues, resist technology and track system, Mask and OPC such as mask, fabrication, mask technology, proximity effect and OPC, Next generation, Lithography with NGL, Immersion and imprint. In the last, there are questions and answers.

Wavelength selection for multilayer coatings for the lithography generation beyond extreme ultraviolet

NARCIS (Netherlands)

Makhotkin, Igor Alexandrovich; Zoethout, E.; Louis, Eric; Yakunin, A.M.; Muellender, S.; Bijkerk, Frederik

2012-01-01

Reducing the operating wavelength in advanced photolitho- graphy while maintaining the lithography machine’s produc- tivity has been a traditional way to enable improved imaging for the last 20 years. The transition from 13.5 nm to 6.5 to 6.9 nm optical lithography offers a possibility to combine

Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication

KAUST Repository

Wan, Weiwei

2014-03-01

Nanoimprint lithography (NIL) is a cost-efficient nanopatterning technology because of its promising advantages of high throughput and high resolution. However, accurate multilevel overlay capability of NIL required for integrated circuit manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage in the manufacture of the coplanar structures, such as integrated plasmonic devices. In this paper, we develop a new process of planar self-alignment imprint lithography (P-SAIL) to fabricate the metallic and dielectric structures on the same plane. P-SAIL transfers the multilevel imprint processes to a single-imprint process which offers higher efficiency and less cost than existing manufacturing methods. Such concept is demonstrated in an example of fabricating planar plasmonic structures consisting of different materials. © 2014 Springer-Verlag Berlin Heidelberg.

Advanced coatings for next generation lithography

Science.gov (United States)

Naujok, P.; Yulin, S.; Kaiser, N.; Tünnermann, A.

2015-03-01

Beyond EUV lithography at 6.X nm wavelength has a potential to extend EUVL beyond the 11 nm node. To implement B-based mirrors and to enable their industrial application in lithography tools, a reflectivity level of > 70% has to be reached in near future. The authors will prove that transition from conventional La/B4C to promising LaN/B4C multilayer coatings leads to enhanced optical properties. Currently a near normal-incidence reflectivity of 58.1% @ 6.65 nm is achieved by LaN/B4C multilayer mirrors. The introduction of ultrathin diffusion barriers into the multilayer design to reach the targeted reflectivity of 70% was also tested. The optimization of multilayer design and deposition process for interface-engineered La/C/B4C multilayer mirrors resulted in peak reflectivity of 56.8% at the wavelength of 6.66 nm. In addition, the thermal stability of several selected multilayers was investigated and will be discussed.

Rapid fabrication of microfluidic chips based on the simplest LED lithography

Science.gov (United States)

Li, Yue; Wu, Ping; Luo, Zhaofeng; Ren, Yuxuan; Liao, Meixiang; Feng, Lili; Li, Yuting; He, Liqun

2015-05-01

Microfluidic chips are generally fabricated by a soft lithography method employing commercial lithography equipment. These heavy machines require a critical room environment and high lamp power, and the cost remains too high for most normal laboratories. Here we present a novel microfluidics fabrication method utilizing a portable ultraviolet (UV) LED as an alternative UV source for photolithography. With this approach, we can repeat several common microchannels as do these conventional commercial exposure machines, and both the verticality of the channel sidewall and lithography resolution are proved to be acceptable. Further microfluidics applications such as mixing, blood typing and microdroplet generation are implemented to validate the practicability of the chips. This simple but innovative method decreases the cost and requirement of chip fabrication dramatically and may be more popular with ordinary laboratories.

Rapid fabrication of microfluidic chips based on the simplest LED lithography

International Nuclear Information System (INIS)

Li, Yue; Wu, Ping; Liao, Meixiang; Feng, Lili; Li, Yuting; He, Liqun; Luo, Zhaofeng; Ren, Yuxuan

2015-01-01

Microfluidic chips are generally fabricated by a soft lithography method employing commercial lithography equipment. These heavy machines require a critical room environment and high lamp power, and the cost remains too high for most normal laboratories. Here we present a novel microfluidics fabrication method utilizing a portable ultraviolet (UV) LED as an alternative UV source for photolithography. With this approach, we can repeat several common microchannels as do these conventional commercial exposure machines, and both the verticality of the channel sidewall and lithography resolution are proved to be acceptable. Further microfluidics applications such as mixing, blood typing and microdroplet generation are implemented to validate the practicability of the chips. This simple but innovative method decreases the cost and requirement of chip fabrication dramatically and may be more popular with ordinary laboratories. (paper)

A preliminary study of synchrotron light sources for x-ray lithography

International Nuclear Information System (INIS)

Hoffmann, C.R.; Bigham, C.B.; Ebrahim, N.A.; Sawicki, J.A.; Taylor, T.

1989-02-01

A preliminary study of synchrotron light sources has been made, primarily oriented toward x-ray lithography. X-ray lithography is being pursued vigorously in several countries, with a goal of manufacturing high-density computer chips (0.25 μm feature sizes), and may attain commercial success in the next decade. Many other applications of soft x-rays appear worthy of investigation as well. The study group visited synchrotron radiation facilities and had discussions with members of the synchrotron radiation community, particularly Canadians. It concluded that accelerator technology for a conventional synchrotron light source appropriate for x-ray lithography is well established and is consistent with skills and experience at Chalk River Nuclear Laboratories. Compact superconducting systems are being developed also. Their technical requirements overlap with capabilities at Chalk River. (32 refs)

Quantum lithography beyond the diffraction limit via Rabi-oscillations

Science.gov (United States)

Liao, Zeyang; Al-Amri, Mohammad; Zubairy, M. Suhail

2011-03-01

We propose a quantum optical method to do the sub-wavelength lithography. Our method is similar to the traditional lithography but adding a critical step before dissociating the chemical bound of the photoresist. The subwavelength pattern is achieved by inducing the multi-Rabi-oscillation between the two atomic levels. The proposed method does not require multiphoton absorption and the entanglement of photons. This method is expected to be realizable using current technology. This work is supported by a grant from the Qatar National Research Fund (QNRF) under the NPRP project and a grant from the King Abdulaziz City for Science and Technology (KACST).

Simulation flow and model verification for laser direct-write lithography

Science.gov (United States)

Onanuga, Temitope; Rumler, Maximilian; Erdmann, Andreas

2017-07-01

A simulation flow for laser direct-write lithography (LDWL), a maskless lithography process in which a focused laser beam is scanned through a photoresist, is proposed. The simulation flow includes focusing of Gaussian beams, photoresist exposure, free-radical polymerization chemistry of the photoresist, and photoresist development. We applied the simulation method to investigate the scaling of feature sizes or linewidths for a varying number of exposure cycles at a total constant exposure dose. Experimental results from literature demonstrate that exposing the photoresist over multiple exposure cycles causes a reduction in linewidths. We explore possible reasons for this phenomenon and conclude that radical losses occurring between subsequent exposures provide a possible explanation of the observed effects. Furthermore, we apply the developed simulation method to analyze lithographic structures that were fabricated by a combination of LDWL and nanoimprint lithography. The simulation results agree with the experimental tendencies of a reduced likelihood of overexposures with an increase in the number of exposure cycles.

Charge storage in mesoscopic graphitic islands fabricated using AFM bias lithography

Energy Technology Data Exchange (ETDEWEB)

Kurra, Narendra; Basavaraja, S; Kulkarni, G U [Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560 064 (India); Prakash, Gyan; Fisher, Timothy S; Reifenberger, Ronald G, E-mail: kulkarni@jncasr.ac.in, E-mail: reifenbr@purdue.edu [Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States)

2011-06-17

Electrochemical oxidation and etching of highly oriented pyrolytic graphite (HOPG) has been achieved using biased atomic force microscopy (AFM) lithography, allowing patterns of varying complexity to be written into the top layers of HOPG. The graphitic oxidation process and the trench geometry after writing were monitored using intermittent contact mode AFM. Electrostatic force microscopy reveals that the isolated mesoscopic islands formed during the AFM lithography process become positively charged, suggesting that they are laterally isolated from the surrounding HOPG substrate. The electrical transport studies of these laterally isolated finite-layer graphitic islands enable detailed characterization of electrical conduction along the c-direction and reveal an unexpected stability of the charged state. Utilizing conducting-atomic force microscopy, the measured I(V) characteristics revealed significant non-linearities. Micro-Raman studies confirm the presence of oxy functional groups formed during the lithography process.

Report of the fifth workshop on synchrotron x-ray lithography

International Nuclear Information System (INIS)

Williams, G.P.; Godel, J.B.; Brown, G.S.

1989-01-01

Semiconductors comprise a greater part of the United States economy than the aircraft, steel and automobile industries combined. In future the semiconductor manufacturing industry will be forced to switch away from present optical manufacturing methods in the early to mid 1990's. X-ray lithography has emerged as the leading contender for continuing production below the 0.4 micron level. Brookhaven National Laboratory began a series of workshops on x-ray lithography in 1986 to examine key issues and in particular to enable United States industry to take advantage of the technical base established in this field. Since accelerators provide the brightest sources for x-ray lithography, most of the research and development to date has taken place at large accelerator-based research centers such as Brookhaven, the University of Wisconsin and Stanford. The goals of this Fifth Brookhaven Workshop were to review progress and goals since the last workshop and to establish a blueprint for the future. The meeting focused on the ''Exposure Tool,'' that is, a term defined as the source plus beamline and stepper. In order to assess the appropriateness of schedules for the development of this tool, other aspects of the required technology such as masks, resists and inspection and repair were also reviewed. To accomplish this, two working groups were set up, one to review the overall aspects of x-ray lithography and set a time frame, the other to focus on sources

Report of the fifth workshop on synchrotron x-ray lithography

Energy Technology Data Exchange (ETDEWEB)

Williams, G.P.; Godel, J.B. (Brookhaven National Lab., Upton, NY (USA)); Brown, G.S. (Stanford Univ., CA (USA). Stanford Synchrotron Radiation Lab.); Liebmann, W. (Suss (Karl) America, Essex Junction, VT (USA))

1989-01-01

Semiconductors comprise a greater part of the United States economy than the aircraft, steel and automobile industries combined. In future the semiconductor manufacturing industry will be forced to switch away from present optical manufacturing methods in the early to mid 1990's. X-ray lithography has emerged as the leading contender for continuing production below the 0.4 micron level. Brookhaven National Laboratory began a series of workshops on x-ray lithography in 1986 to examine key issues and in particular to enable United States industry to take advantage of the technical base established in this field. Since accelerators provide the brightest sources for x-ray lithography, most of the research and development to date has taken place at large accelerator-based research centers such as Brookhaven, the University of Wisconsin and Stanford. The goals of this Fifth Brookhaven Workshop were to review progress and goals since the last workshop and to establish a blueprint for the future. The meeting focused on the Exposure Tool,'' that is, a term defined as the source plus beamline and stepper. In order to assess the appropriateness of schedules for the development of this tool, other aspects of the required technology such as masks, resists and inspection and repair were also reviewed. To accomplish this, two working groups were set up, one to review the overall aspects of x-ray lithography and set a time frame, the other to focus on sources.

Report on the fifth workshop on synchrotron x ray lithography

Science.gov (United States)

Williams, G. P.; Godel, J. B.; Brown, G. S.; Liebmann, W.

Semiconductors comprise a greater part of the United States economy than the aircraft, steel, and automobile industries combined. In future the semiconductor manufacturing industry will be forced to switch away from present optical manufacturing methods in the early to mid 1990s. X ray lithography has emerged as the leading contender for continuing production below the 0.4 micron level. Brookhaven National Laboratory began a series of workshops on x ray lithography in 1986 to examine key issues and in particular to enable United States industry to take advantage of the technical base established in this field. Since accelerators provide the brightest sources for x ray lithography, most of the research and development to date has taken place at large accelerator-based research centers such as Brookhaven, the University of Wisconsin, and Stanford. The goals of this Fifth Brookhaven Workshop were to review progress and goals since the last workshop and to establish a blueprint for the future. The meeting focused on the exposure tool, that is, a term defined as the source plus beamline and stepper. In order to assess the appropriateness of schedules for the development of this tool, other aspects of the required technology such as masks, resists and inspection and repair were also reviewed. To accomplish this, two working groups were set up, one to review the overall aspects of x ray lithography and set a time frame, the other to focus on sources.

Maskless, parallel patterning with zone-plate array lithography

International Nuclear Information System (INIS)

Carter, D. J. D.; Gil, Dario; Menon, Rajesh; Mondol, Mark K.; Smith, Henry I.; Anderson, Erik H.

1999-01-01

Zone-plate array lithography (ZPAL) is a maskless lithography scheme that uses an array of shuttered zone plates to print arbitrary patterns on a substrate. An experimental ultraviolet ZPAL system has been constructed and used to simultaneously expose nine different patterns with a 3x3 array of zone plates in a quasidot-matrix fashion. We present exposed patterns, describe the system design and construction, and discuss issues essential to a functional ZPAL system. We also discuss another ZPAL system which operates with 4.5 nm x radiation from a point source. We present simulations which show that, with our existing x-ray zone plates and this system, we should be able to achieve 55 nm resolution. (c) 1999 American Vacuum Society

Low Cost Lithography Tool for High Brightness LED Manufacturing

Energy Technology Data Exchange (ETDEWEB)

Andrew Hawryluk; Emily True

2012-06-30

The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

Multi-level single mode 2D polymer waveguide optical interconnects using nano-imprint lithography

NARCIS (Netherlands)

Khan, M.U.; Justice, J.; Petäjä, J.; Korhonen, T.; Boersma, A.; Wiegersma, S.; Karppinen, M.; Corbett, B.

2015-01-01

Single and multi-layer passive optical interconnects using single mode polymer waveguides are demonstrated using UV nano-imprint lithography. The fabrication tolerances associated with imprint lithography are investigated and we show a way to experimentally quantify a small variation in index

Looking into the crystal ball: future device learning using hybrid e-beam and optical lithography (Keynote Paper)

Science.gov (United States)

Steen, S. E.; McNab, S. J.; Sekaric, L.; Babich, I.; Patel, J.; Bucchignano, J.; Rooks, M.; Fried, D. M.; Topol, A. W.; Brancaccio, J. R.; Yu, R.; Hergenrother, J. M.; Doyle, J. P.; Nunes, R.; Viswanathan, R. G.; Purushothaman, S.; Rothwell, M. B.

2005-05-01

Semiconductor process development teams are faced with increasing process and integration complexity while the time between lithographic capability and volume production has remained more or less constant over the last decade. Lithography tools have often gated the volume checkpoint of a new device node on the ITRS roadmap. The processes have to be redeveloped after the tooling capability for the new groundrule is obtained since straight scaling is no longer sufficient. In certain cases the time window that the process development teams have is actually decreasing. In the extreme, some forecasts are showing that by the time the 45nm technology node is scheduled for volume production, the tooling vendors will just begin shipping the tools required for this technology node. To address this time pressure, IBM has implemented a hybrid-lithography strategy that marries the advantages of optical lithography (high throughput) with electron beam direct write lithography (high resolution and alignment capability). This hybrid-lithography scheme allows for the timely development of semiconductor processes for the 32nm node, and beyond. In this paper we will describe how hybrid lithography has enabled early process integration and device learning and how IBM applied e-beam & optical hybrid lithography to create the world's smallest working SRAM cell.

Grayscale lithography-automated mask generation for complex three-dimensional topography

Science.gov (United States)

Loomis, James; Ratnayake, Dilan; McKenna, Curtis; Walsh, Kevin M.

2016-01-01

Grayscale lithography is a relatively underutilized technique that enables fabrication of three-dimensional (3-D) microstructures in photosensitive polymers (photoresists). By spatially modulating ultraviolet (UV) dosage during the writing process, one can vary the depth at which photoresist is developed. This means complex structures and bioinspired designs can readily be produced that would otherwise be cost prohibitive or too time intensive to fabricate. The main barrier to widespread grayscale implementation, however, stems from the laborious generation of mask files required to create complex surface topography. We present a process and associated software utility for automatically generating grayscale mask files from 3-D models created within industry-standard computer-aided design (CAD) suites. By shifting the microelectromechanical systems (MEMS) design onus to commonly used CAD programs ideal for complex surfacing, engineering professionals already familiar with traditional 3-D CAD software can readily utilize their pre-existing skills to make valuable contributions to the MEMS community. Our conversion process is demonstrated by prototyping several samples on a laser pattern generator-capital equipment already in use in many foundries. Finally, an empirical calibration technique is shown that compensates for nonlinear relationships between UV exposure intensity and photoresist development depth as well as a thermal reflow technique to help smooth microstructure surfaces.

Fabrication of a Polymer Micro Needle Array by Mask-Dragging X-Ray Lithography and Alignment X-Ray Lithography

International Nuclear Information System (INIS)

Li Yi-Gui; Yang Chun-Sheng; Liu Jing-Quan; Sugiyama Susumu

2011-01-01

Polymer materials such as transparent thermoplastic poly(methyl methacrylate) (PMMA) have been of great interest in the research and development of integrated circuits and micro-electromechanical systems due to their relatively low cost and easy process. We fabricated PMMA-based polymer hollow microneedle arrays by mask-dragging and aligning x-ray lithography. Techniques for 3D micromachining by direct lithography using x-rays are developed. These techniques are based on using image projection in which the x-ray is used to illuminate an appropriate gold pattern on a polyimide film mask. The mask is imaged onto the PMMA sample. A pattern with an area of up to 100 × 100mm 2 can be fabricated with sub-micron resolution and a highly accurate order of a few microns by using a dragging mask. The fabrication technology has several advantages, such as forming complex 3D micro structures, high throughput and low cost. (cross-disciplinary physics and related areas of science and technology)

Fabrication of a Polymer Micro Needle Array by Mask-Dragging X-Ray Lithography and Alignment X-Ray Lithography

Science.gov (United States)

Li, Yi-Gui; Yang, Chun-Sheng; Liu, Jing-Quan; Sugiyama, Susumu

2011-03-01

Polymer materials such as transparent thermoplastic poly(methyl methacrylate) (PMMA) have been of great interest in the research and development of integrated circuits and micro-electromechanical systems due to their relatively low cost and easy process. We fabricated PMMA-based polymer hollow microneedle arrays by mask-dragging and aligning x-ray lithography. Techniques for 3D micromachining by direct lithography using x-rays are developed. These techniques are based on using image projection in which the x-ray is used to illuminate an appropriate gold pattern on a polyimide film mask. The mask is imaged onto the PMMA sample. A pattern with an area of up to 100 × 100mm2 can be fabricated with sub-micron resolution and a highly accurate order of a few microns by using a dragging mask. The fabrication technology has several advantages, such as forming complex 3D micro structures, high throughput and low cost.

Plasma sources for EUV lithography exposure tools

International Nuclear Information System (INIS)

Banine, Vadim; Moors, Roel

2004-01-01

The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil extremely high demands both technical and cost oriented. The EUVL tool operates at a wavelength in the range 13-14 nm, which requires a major re-thinking of state-of-the-art lithography systems operating in the DUV range. The light production mechanism changes from conventional lamps and lasers to relatively high temperature emitting plasmas. The light transport, mainly refractive for DUV, should become reflective for EUV. The source specifications are derived from the customer requirements for the complete tool, which are: throughput, cost of ownership (CoO) and imaging quality. The EUVL system is considered as a follow up of the existing DUV based lithography technology and, while improving the feature resolution, it has to maintain high wafer throughput performance, which is driven by the overall CoO picture. This in turn puts quite high requirements on the collectable in-band power produced by an EUV source. Increased, due to improved feature resolution, critical dimension (CD) control requirements, together with reflective optics restrictions, necessitate pulse-to-pulse repeatability, spatial stability control and repetition rates, which are substantially better than those of current optical systems. All together the following aspects of the source specification will be addressed: the operating wavelength, the EUV power, the hot spot size, the collectable angle, the repetition rate, the pulse-to-pulse repeatability and the debris induced lifetime of components

Deep-etch x-ray lithography at the ALS: First results

Energy Technology Data Exchange (ETDEWEB)

Malek, C.K.; Jackson, K.H. [Ernest Orlando Lawrence Berkeley National Lab., CA (United States); Brennen, R.A. [Jet Propulsion Lab., Pasadena, CA (United States)] [and others

1997-04-01

The fabrication of high-aspect-ratio and three-dimensional (3D) microstructures is of increasing interest in a multitude of applications in fields such as micromechanics, optics, and interconnect technology. Techniques and processes that enable lithography in thick materials differ from the planar technologies used in standard integrated circuit processing. Deep x-ray lithography permits extremely precise and deep proximity printing of a given pattern from a mask into a very thick resist. It requires a source of hard, intense, and well collimated x-ray radiation, as is provided by a synchrotron radiation source. The thick resist microstructures, so produced can be used as templates from which ultrahigh precision parts with high aspect ratios can be mass-produced out of a large variety of materials (metals, plastics, ceramics). This whole series of techniques and processes has been historically referred to as {open_quotes}LIGA,{close_quotes} from the German acronym for lithography, electroforming (Galvanoformung), and plastic molding (Abformung), the first development of the basic LIGA process having been performed at the Nuclear Research Center at Karlsruhe in Germany.

Drawing lithography for microneedles: a review of fundamentals and biomedical applications.

Science.gov (United States)

Lee, Kwang; Jung, Hyungil

2012-10-01

A microneedle is a three-dimensional (3D) micromechanical structure and has been in the spotlight recently as a drug delivery system (DDS). Because a microneedle delivers the target drug after penetrating the skin barrier, the therapeutic effects of microneedles proceed from its 3D structural geometry. Various types of microneedles have been fabricated using subtractive micromanufacturing methods which are based on the inherently planar two-dimensional (2D) geometries. However, traditional subtractive processes are limited for flexible structural microneedles and makes functional biomedical applications for efficient drug delivery difficult. The authors of the present study propose drawing lithography as a unique additive process for the fabrication of a microneedle directly from 2D planar substrates, thus overcoming a subtractive process shortcoming. The present article provides the first overview of the principal drawing lithography technology: fundamentals and biomedical applications. The continuous drawing technique for an ultrahigh-aspect ratio (UHAR) hollow microneedle, stepwise controlled drawing technique for a dissolving microneedle, and drawing technique with antidromic isolation for a hybrid electro-microneedle (HEM) are reviewed, and efficient biomedical applications by drawing lithography-mediated microneedles as an innovative drug and gene delivery system are described. Drawing lithography herein can provide a great breakthrough in the development of materials science and biotechnology. Copyright © 2012 Elsevier Ltd. All rights reserved.

Metal layer mask patterning by force microscopy lithography

International Nuclear Information System (INIS)

Filho, H.D. Fonseca; Mauricio, M.H.P.; Ponciano, C.R.; Prioli, R.

2004-01-01

The nano-lithography of a metallic surface in air by atomic force microscopy while operated in contact mode and equipped with a diamond tip is presented. The aluminum mask was prepared by thermal deposition on arsenic sulfide films. The analysis of the scratches performed by the tip on the metallic mask show that the depth of the lithographed pattern increases with the increase of the applied normal force. The scanning velocity is also shown to influence the AFM patterning process. As the scanning velocity increases, the scratch depth and width decreases. Nano-indentations performed with the diamond tip show that the plastically deformed surface increases with the increase of the duration of the applied force. The use of the nano-lithography method to create nano-structures is discussed

V-groove plasmonic waveguides fabricated by nanoimprint lithography

DEFF Research Database (Denmark)

Fernandez-Cuesta, I.; Nielsen, R.B.; Boltasseva, Alexandra

2007-01-01

Propagation of channel plasmon-polariton modes in the bottom of a metal V groove has been recently demonstrated. It provides a unique way of manipulating light at nanometer length scale. In this work, we present a method based on nanoimprint lithography that allows parallel fabrication of integra...... of integrated optical devices composed of metal V grooves. This method represents an improvement with respect to previous works, where the V grooves were fabricated by direct milling of the metal, in terms of robustness and throughput. © 2007 American Vacuum Society......Propagation of channel plasmon-polariton modes in the bottom of a metal V groove has been recently demonstrated. It provides a unique way of manipulating light at nanometer length scale. In this work, we present a method based on nanoimprint lithography that allows parallel fabrication...

A new lithography of functional plasma polymerized thin films

International Nuclear Information System (INIS)

Kim, Sung-O

2001-01-01

The preparation of the resist for the vacuum lithography was carried out by plasma polymerization. The resist manufactured by plasma polymerization is a monomer produced by MMA (Methyl methacrylate). The functional groups of MMA appeared in the PPMMA (Plasma Polymerized Methyl methacrylate) as well, and this was confirmed through an analysis using FT-IR. The polymerization rate increased as a function of the plasma power and decreased as a function of the system pressure. The sensitivity and contrast of the plasma polymerized thin films were 15 μC/cm2 and 4.3 respectively. The size of the pattern manufactured by Vacuum Lithography using the plasma polymerized thin films was 100 nm

Soft X-ray microscopy and lithography with synchrotron radiation

International Nuclear Information System (INIS)

Gudat, W.

1977-12-01

Considerable progress in the technique microscopy with soft X-ray radiation has been achieved in particular through the application of synchrotron radiation. Various methods which are currently being studied theoretically or already being used practically will be described briefly. Attention is focussed on the method of contact microscopy. Various biological specimens have been investigated by this method with a resolution as good as 100 A. X-ray lithography which in the technical procedure is very similar to contact microscopy gives promise for the fabrication of high quality submicron structures in electronic device production. Important factors limiting the resolution and determining the performance of contact microscopy and X-ray lithography will be discussed. (orig.) [de

Critical dimension and pattern size enhancement using pre-strained lithography

Energy Technology Data Exchange (ETDEWEB)

Hong, Jian-Wei [Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China); Yang, Chung-Yuan [Institute of NanoEngineering and MicroSystems, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China); Lo, Cheng-Yao, E-mail: chengyao@mx.nthu.edu.tw [Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China); Institute of NanoEngineering and MicroSystems, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China)

2014-10-13

This paper proposes a non-wavelength-shortening-related critical dimension and pattern size reduction solution for the integrated circuit industry that entails generating strain on the substrate prior to lithography. Pattern size reduction of up to 49% was achieved regardless of shape, location, and size on the xy plane, and complete theoretical calculations and process steps are described in this paper. This technique can be applied to enhance pattern resolution by employing materials and process parameters already in use and, thus, to enhance the capability of outdated lithography facilities, enabling them to particularly support the manufacturing of flexible electronic devices with polymer substrates.

Investigation of the physics of diamond MEMS : diamond allotrope lithography

International Nuclear Information System (INIS)

Zalizniak, I.; Olivero, P.; Jamieson, D.N.; Prawer, S.; Reichart, P.; Rubanov, S.; Petriconi, S.

2005-01-01

We propose a novel lithography process in which ion induced phase transfomations of diamond form sacrificial layers allowing the fabrication of small structures including micro-electromechanical systems (MEMS). We have applied this novel lithography to the fabrication of diamond microcavities, cantilevers and optical waveguides. In this paper we present preliminary experiments directed at the fabrication of suspended diamond disks that have the potential for operation as optical resonators. Such structures would be very durable and resistant to chemical attack with potential applications as novel sensors for extreme environments or high temperature radiation detectors. (author). 3 refs., 3 figs

Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

Science.gov (United States)

Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

2017-06-01

The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (industries and opening opportunities in nanomanufacturing.

Nano-LED array fabrication suitable for future single photon lithography

International Nuclear Information System (INIS)

Mikulics, M; Hardtdegen, H

2015-01-01

We report on an alternative illumination concept for a future lithography based on single-photon emitters and important technological steps towards its implementation. Nano light-emitting diodes (LEDs) are chosen as the photon emitters. First, the development of their fabrication and their integration technology is presented, then their optical characteristics assessed. Last, size-controlled nano-LEDs, well positioned in an array, are electrically driven and utilized for illumination. Nanostructures are lithographically formed, demonstrating the feasibility of the approach. The potential of single-photon lithography to reach the ultimate scale limits in mass production is discussed. (paper)

Seamless-merging-oriented parallel inverse lithography technology

International Nuclear Information System (INIS)

Yang Yiwei; Shi Zheng; Shen Shanhu

2009-01-01

Inverse lithography technology (ILT), a promising resolution enhancement technology (RET) used in next generations of IC manufacture, has the capability to push lithography to its limit. However, the existing methods of ILT are either time-consuming due to the large layout in a single process, or not accurate enough due to simply block merging in the parallel process. The seamless-merging-oriented parallel ILT method proposed in this paper is fast because of the parallel process; and most importantly, convergence enhancement penalty terms (CEPT) introduced in the parallel ILT optimization process take the environment into consideration as well as environmental change through target updating. This method increases the similarity of the overlapped area between guard-bands and work units, makes the merging process approach seamless and hence reduces hot-spots. The experimental results show that seamless-merging-oriented parallel ILT not only accelerates the optimization process, but also significantly improves the quality of ILT.

Scanning probe lithography for nanoimprinting mould fabrication

International Nuclear Information System (INIS)

Luo Gang; Xie Guoyong; Zhang Yongyi; Zhang Guoming; Zhang Yingying; Carlberg, Patrick; Zhu Tao; Liu Zhongfan

2006-01-01

We propose a rational fabrication method for nanoimprinting moulds by scanning probe lithography. By wet chemical etching, different kinds of moulds are realized on Si(110) and Si(100) surfaces according to the Si crystalline orientation. The structures have line widths of about 200 nm with a high aspect ratio. By reactive ion etching, moulds with patterns free from the limitation of Si crystalline orientation are also obtained. With closed-loop scan control of a scanning probe microscope, the length of patterned lines is more than 100 μm by integrating several steps of patterning. The fabrication process is optimized in order to produce a mould pattern with a line width about 10 nm. The structures on the mould are further duplicated into PMMA resists through the nanoimprinting process. The method of combining scanning probe lithography with wet chemical etching or reactive ion etching (RIE) provides a resistless route for the fabrication of nanoimprinting moulds

TUTORIAL: Focused-ion-beam-based rapid prototyping of nanoscale magnetic devices

Science.gov (United States)

Khizroev, S.; Litvinov, D.

2004-03-01

In this tutorial, focused-ion-beam (FIB)-based fabrication is considered from a very unconventional angle. FIB is considered not as a fabrication tool that can be used for mass production of electronic devices, similar to optical and E-beam—based lithography, but rather as a powerful tool to rapidly fabricate individual nanoscale magnetic devices for prototyping future electronic applications. Among the effects of FIB-based fabrication of magnetic devices, the influence of Ga+-ion implantation on magnetic properties is presented. With help of magnetic force microscopy (MFM), it is shown that there is a critical doze of ions that a magnetic material can be exposed to without experiencing a change in the magnetic properties. Exploiting FIB from such an unconventional perspective is especially favourable today when the future of so many novel technologies depends on the ability to rapidly fabricate prototype nanoscale magnetic devices. As one of the most illustrative examples, the multi-billion-dollar data storage industry is analysed as the technology field that strongly benefited from implementing FIB in the above-described role. The essential role of FIB in the most recent trend of the industry towards perpendicular magnetic recording is presented. Moreover, other emerging and fast-growing technologies are considered as examples of nanoscale technologies whose future could strongly depend on the implementation of FIB in the role of a nanoscale fabrication tool for rapid prototyping. Among the other described technologies are 'ballistic' magnetoresistance, patterned magnetic media, magnetoresistive RAM (MRAM), and magnetic force microscopy.

Integration of multiple theories for the simulation of laser interference lithography processes.

Science.gov (United States)

Lin, Te-Hsun; Yang, Yin-Kuang; Fu, Chien-Chung

2017-11-24

The periodic structure of laser interference lithography (LIL) fabrication is superior to other lithography technologies. In contrast to traditional lithography, LIL has the advantages of being a simple optical system with no mask requirements, low cost, high depth of focus, and large patterning area in a single exposure. Generally, a simulation pattern for the periodic structure is obtained through optical interference prior to its fabrication through LIL. However, the LIL process is complex and combines the fields of optical and polymer materials; thus, a single simulation theory cannot reflect the real situation. Therefore, this research integrates multiple theories, including those of optical interference, standing waves, and photoresist characteristics, to create a mathematical model for the LIL process. The mathematical model can accurately estimate the exposure time and reduce the LIL process duration through trial and error.

Tunable atomic force microscopy bias lithography on electron beam induced carbonaceous platforms

Directory of Open Access Journals (Sweden)

Narendra Kurra

2013-09-01

Full Text Available Tunable local electrochemical and physical modifications on the carbonaceous platforms are achieved using Atomic force microscope (AFM bias lithography. These carbonaceous platforms are produced on Si substrate by the technique called electron beam induced carbonaceous deposition (EBICD. EBICD is composed of functionalized carbon species, confirmed through X-ray photoelectron spectroscopy (XPS analysis. AFM bias lithography in tapping mode with a positive tip bias resulted in the nucleation of attoliter water on the EBICD surface under moderate humidity conditions (45%. While the lithography in the contact mode with a negative tip bias caused the electrochemical modifications such as anodic oxidation and etching of the EBICD under moderate (45% and higher (60% humidity conditions respectively. Finally, reversible charge patterns are created on these EBICD surfaces under low (30% humidity conditions and investigated by means of electrostatic force microscopy (EFM.

Integration of multiple theories for the simulation of laser interference lithography processes

Science.gov (United States)

Lin, Te-Hsun; Yang, Yin-Kuang; Fu, Chien-Chung

2017-11-01

The periodic structure of laser interference lithography (LIL) fabrication is superior to other lithography technologies. In contrast to traditional lithography, LIL has the advantages of being a simple optical system with no mask requirements, low cost, high depth of focus, and large patterning area in a single exposure. Generally, a simulation pattern for the periodic structure is obtained through optical interference prior to its fabrication through LIL. However, the LIL process is complex and combines the fields of optical and polymer materials; thus, a single simulation theory cannot reflect the real situation. Therefore, this research integrates multiple theories, including those of optical interference, standing waves, and photoresist characteristics, to create a mathematical model for the LIL process. The mathematical model can accurately estimate the exposure time and reduce the LIL process duration through trial and error.

3D Simulation of Nano-Imprint Lithography

DEFF Research Database (Denmark)

Román Marín, José Manuel; Rasmussen, Henrik K.; Hassager, Ole

2010-01-01

A proof of concept study of the feasibility of fully three-dimensional (3D) time-dependent simulation of nano-imprint lithography of polymer melt, where the polymer is treated as a structured liquid, has been presented. Considering the flow physics of the polymer as a structured liquid, we have...

Laser interference lithography with highly accurate interferometric alignment

NARCIS (Netherlands)

van Soest, Frank J.; van Wolferen, Hendricus A.G.M.; Hoekstra, Hugo; de Ridder, R.M.; Worhoff, Kerstin; Lambeck, Paul

It is shown experimentally that in laser interference lithography, by using a reference grating, respective grating layers can be positioned with high relative accuracy. A 0.001 degree angular and a few nanometers lateral resolution have been demonstrated.

Wafer-shape metrics based foundry lithography

Science.gov (United States)

Kim, Sungtae; Liang, Frida; Mileham, Jeffrey; Tsai, Damon; Bouche, Eric; Lee, Sean; Huang, Albert; Hua, C. F.; Wei, Ming Sheng

2017-03-01

As device shrink, there are many difficulties with process integration and device yield. Lithography process control is expected to be a major challenge due to tighter overlay and focus control requirement. The understanding and control of stresses accumulated during device fabrication has becoming more critical at advanced technology nodes. Within-wafer stress variations cause local wafer distortions which in turn present challenges for managing overlay and depth of focus during lithography. A novel technique for measuring distortion is Coherent Gradient Sensing (CGS) interferometry, which is capable of generating a high-density distortion data set of the full wafer within a time frame suitable for a high volume manufacturing (HVM) environment. In this paper, we describe the adoption of CGS (Coherent Gradient Sensing) interferometry into high volume foundry manufacturing to overcome these challenges. Leveraging this high density 3D metrology, we characterized its In-plane distortion as well as its topography capabilities applied to the full flow of an advanced foundry manufacturing. Case studies are presented that summarize the use of CGS data to reveal correlations between in-plane distortion and overlay variation as well as between topography and device yield.

ILT optimization of EUV masks for sub-7nm lithography

Science.gov (United States)

Hooker, Kevin; Kuechler, Bernd; Kazarian, Aram; Xiao, Guangming; Lucas, Kevin

2017-06-01

The 5nm and 7nm technology nodes will continue recent scaling trends and will deliver significantly smaller minimum features, standard cell areas and SRAM cell areas vs. the 10nm node. There are tremendous economic pressures to shrink each subsequent technology, though in a cost-effective and performance enhancing manner. IC manufacturers are eagerly awaiting EUV so that they can more aggressively shrink their technology than they could by using complicated MPT. The current 0.33NA EUV tools and processes also have their patterning limitations. EUV scanner lenses, scanner sources, masks and resists are all relatively immature compared to the current lithography manufacturing baseline of 193i. For example, lens aberrations are currently several times larger (as a function of wavelength) in EUV scanners than for 193i scanners. Robustly patterning 16nm L/S fully random logic metal patterns and 40nm pitch random logic rectangular contacts with 0.33NA EUV are tough challenges that will benefit from advanced OPC/RET. For example, if an IC manufacturer can push single exposure device layer resolution 10% tighter using improved ILT to avoid using DPT, there will be a significant cost and process complexity benefit to doing so. ILT is well known to have considerable benefits in finding flexible 193i mask pattern solutions to improve process window, improve 2D CD control, improve resolution in low K1 lithography regime and help to delay the introduction of DPT. However, ILT has not previously been applied to EUV lithography. In this paper, we report on new developments which extend ILT method to EUV lithography and we characterize the benefits seen vs. traditional EUV OPC/RET methods.

Development of nanostencil lithography and its applications for plasmonics and vibrational biospectroscopy

Science.gov (United States)

Aksu, Serap

Development of low cost nanolithography tools for precisely creating a variety of nanostructure shapes and arrangements in a high-throughput fashion is crucial for next generation biophotonic technologies. Although existing lithography techniques offer tremendous design flexibility, they have major drawbacks such as low-throughput and fabrication complexity. In addition the demand for the systematic fabrication of sub-100 nm structures on flexible, stretchable, non-planar nanoelectronic/photonic systems and multi-functional materials has fueled the research for innovative fabrication methods in recent years. This thesis research investigates a novel lithography approach for fabrication of engineered plasmonic nanostructures and metamaterials operating at visible and infrared wavelengths. The technique is called Nanostencil Lithography (NSL) and relies on direct deposition of materials through nanoapertures on a stencil. NSL enables high throughput fabrication of engineered antenna arrays with optical qualities similar to the ones fabricated by standard electron beam lithography. Moreover, nanostencils can be reused multiple times to fabricate series of plasmonic nanoantenna arrays with identical optical responses enabling high throughput manufacturing. Using nanostencils, very precise nanostructures could be fabricated with 10 nm accuracy. Furthermore, this technique has flexibility and resolution to create complex plasmonic nanostructure arrays on the substrates that are difficult to work with e-beam and ion beam lithography tools. Combining plasmonics with polymeric materials, biocompatible surfaces or curvilinear and non-planar objects enable unique optical applications since they can preserve normal device operation under large strain. In this work, mechanically tunable flexible optical materials and spectroscopy probes integrated on fiber surfaces that could be used for a wide range of applications are demonstrated. Finally, the first application of NSL

Rapid prototyping of 2D glass microfluidic devices based on femtosecond laser assisted selective etching process

Science.gov (United States)

Kim, Sung-Il; Kim, Jeongtae; Koo, Chiwan; Joung, Yeun-Ho; Choi, Jiyeon

2018-02-01

Microfluidics technology which deals with small liquid samples and reagents within micro-scale channels has been widely applied in various aspects of biological, chemical, and life-scientific research. For fabricating microfluidic devices, a silicon-based polymer, PDMS (Polydimethylsiloxane), is widely used in soft lithography, but it has several drawbacks for microfluidic applications. Glass has many advantages over PDMS due to its excellent optical, chemical, and mechanical properties. However, difficulties in fabrication of glass microfluidic devices that requires multiple skilled steps such as MEMS technology taking several hours to days, impedes broad application of glass based devices. Here, we demonstrate a rapid and optical prototyping of a glass microfluidic device by using femtosecond laser assisted selective etching (LASE) and femtosecond laser welding. A microfluidic droplet generator was fabricated as a demonstration of a microfluidic device using our proposed prototyping. The fabrication time of a single glass chip containing few centimeter long and complex-shaped microfluidic channels was drastically reduced in an hour with the proposed laser based rapid and simple glass micromachining and hermetic packaging technique.

Realization of a diamond based high density multi electrode array by means of Deep Ion Beam Lithography

International Nuclear Information System (INIS)

Picollo, F.; Battiato, A.; Bernardi, E.; Boarino, L.; Enrico, E.; Forneris, J.; Gatto Monticone, D.; Olivero, P.

2015-01-01

In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural modification of diamond: in particular ion-damaged diamond can be converted into graphite, therefore obtaining an electrically conductive phase embedded in an optically transparent and highly insulating matrix. The proposed fabrication process consists in the combination of Deep Ion Beam Lithography (DIBL) and Focused Ion Beam (FIB) milling. FIB micromachining is employed to define micro-apertures in the contact masks consisting of thin (<10 μm) deposited metal layers through which ions are implanted in the sample. A prototypical single-cell biosensor was realized with the above described technique. The biosensor has 16 independent electrodes converging inside a circular area of 20 μm diameter (typical neuroendocrine cells size) for the simultaneous recording of amperometric signals

Manipulation and simulations of thermal field profiles in laser heat-mode lithography

Science.gov (United States)

Wei, Tao; Wei, Jingsong; Wang, Yang; Zhang, Long

2017-12-01

Laser heat-mode lithography is a very useful method for high-speed fabrication of large-area micro/nanostructures. To obtain nanoscale pattern structures, one needs to manipulate the thermal diffusion channels. This work reports the manipulation of the thermal diffusion in laser heat-mode lithography and provides methods to restrain the in-plane thermal diffusion and improve the out-of-plane thermal diffusion. The thermal field profiles in heat-mode resist thin films have been given. It is found that the size of the heat-spot can be decreased by decreasing the thickness of the heat-mode resist thin films, inserting the thermal conduction layers, and shortening the laser irradiation time. The optimized laser writing strategy is also given, where the in-plane thermal diffusion is completely restrained and the out-of-plane thermal diffusion is improved. The heat-spot size is almost equal to that of the laser spot, accordingly. This work provides a very important guide to laser heat-mode lithography.

Suspended liquid subtractive lithography: printing three dimensional channels directly into uncured PDMS

Science.gov (United States)

Helmer, D.; Voigt, A.; Wagner, S.; Keller, N.; Sachsenheimer, K.; Kotz, F.; Nargang, T. M.; Rapp, B. E.

2018-02-01

Polydimethylsiloxane (PDMS) is one of the most widely used polymers for the generation of microfluidic chips. The standard procedures of soft lithography require the formation of a new master structure for every design which is timeconsuming and expensive. All channel generated by soft lithography need to be consecutively sealed by bonding which is a process that can proof to be hard to control. Channel cross-sections are largely restricted to squares or flat-topped designs and the generation of truly three-dimensional designs is not straightforward. Here we present Suspended Liquid Subtractive Lithography (SLSL) a method for generating microfluidic channels of nearly arbitrary three-dimensional structures in PDMS that do not require master formation or bonding and give circular channel cross sections which are especially interesting for mimicking in vivo environments. In SLSL, an immiscible liquid is introduced into the uncured PDMS by a capillary mounted on a 3D printer head. The liquid forms continuous "threads" inside the matrix thus creating void suspended channel structures.

450mm wafer patterning with jet and flash imprint lithography

Science.gov (United States)

Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2013-09-01

The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

Silicon Nanowire Fabrication Using Edge and Corner Lithography

NARCIS (Netherlands)

Yagubizade, H.; Berenschot, Johan W.; Jansen, Henricus V.; Elwenspoek, Michael Curt; Tas, Niels Roelof

2010-01-01

This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features

Fabrication of Spin-Transfer Nano-Oscillator by Colloidal Lithography

Directory of Open Access Journals (Sweden)

Bin Fang

2015-01-01

Full Text Available We fabricate nanoscale spin-transfer oscillators (STOs by utilizing colloidal nanoparticles as a lithographic mask. By this approach, high quality STO devices can be fabricated, and as an example the fabricated STO devices using MgO magnetic tunnel junction as the basic cell exhibit current-induced microwave emission with a large frequency tunability of 0.22 GHz/mA. Compared to the conventional approaches that involve a step of defining nanoscale elements by means of electron beam lithography, which is not readily available for many groups, our strategy for STO fabrication does not require the sophisticated equipment (~ million dollars per unit and expensive lithography resist, while being cost-effective and easy to use in laboratory level. This will accelerate efforts to implement STO into on-chip integrated high-radio frequency applications.

Prototype high-speed tape target transport for a laser plasma soft-x-ray projection lithography source

International Nuclear Information System (INIS)

Haney, S.J.; Berger, K.W.; Kubiak, G.D.; Rockett, P.D.; Hunter, J.

1993-01-01

A prototype high-speed tape target transport is constructed for use in a high-repetition-rate laser plasma source. To reduce plasma debris, a 1000--5000-A-thick film of target material is supported by thin Mylar tape backing. Tape is transported to the laser focal volume at a maximum velocity of 356 cm/s, a rate sufficient to accommodate laser repetition rates of 1 kHz. The transport is fully vacuum compatible and can be retracted and then isolated from the laser plasma vacuum enclosure during tape reel replacement. The operating characteristics of the transport are described

A low cost high resolution pattern generator for electron-beam lithography

International Nuclear Information System (INIS)

Pennelli, G.; D'Angelo, F.; Piotto, M.; Barillaro, G.; Pellegrini, B.

2003-01-01

A simple, very low cost pattern generator for electron-beam lithography is presented. When it is applied to a scanning electron microscope, the system allows a high precision positioning of the beam for lithography of very small structures. Patterns are generated by a suitable software implemented on a personal computer, by using very simple functions, allowing an easy development of new writing strategies for a great adaptability to different user necessities. Hardware solutions, as optocouplers and battery supply, have been implemented for reduction of noise and disturbs on the voltages controlling the positioning of the beam

Feasibility of multi-walled carbon nanotube probes in AFM anodization lithography

International Nuclear Information System (INIS)

Choi, Ji Sun; Bae, Sukjong; Ahn, Sang Jung; Kim, Dal Hyun; Jung, Ki Young; Han, Cheolsu; Chung, Chung Choo; Lee, Haiwon

2007-01-01

Multi-walled carbon nanotube (CNT) tips were used in atomic force microscope (AFM) anodization lithography to investigate their advantages over conventional tips. The CNT tip required a larger threshold voltage than the mother silicon tip due to the Schottky barrier at the CNT-Si interface. Current-to-voltage curves distinguished the junction property between CNTs and mother tips. The CNT-platinum tip, which is more conductive than the CNT-silicon tip, showed promising results for AFM anodization lithography. Finally, the nanostructures with high aspect ratio were fabricated using a pulsed bias voltage technique as well as the CNT tip

EUV lithography : historical perspective and road ahead

NARCIS (Netherlands)

Banine, V.Y.

2014-01-01

Lithography, in the form of carved type printing, can be dated as far back as the 3rd century AD. Starting from the 19th century it played a major role as the basis for dissemination and preservation of knowledge in the form of printed books, maps, newspapers, etc. In the mid 20th century, with the

Dynamic Properties of Individual Carbon Nanotube Emitters for Maskless Lithography

National Research Council Canada - National Science Library

Ribaya, Bryan P; Niemann, Darrell L; Makarewicz, Joseph; Gunther, Norman G; Nguyen, Cattien V; Rahman, Mahmud

2008-01-01

.... The individual CNT's low electron beam energy spread and high brightness values make it particularly desirable for advanced applications such as electron microscopy and electron beam lithography...

Biocompatibility of hydroxyapatite scaffolds processed by lithography-based additive manufacturing.

Science.gov (United States)

Tesavibul, Passakorn; Chantaweroad, Surapol; Laohaprapanon, Apinya; Channasanon, Somruethai; Uppanan, Paweena; Tanodekaew, Siriporn; Chalermkarnnon, Prasert; Sitthiseripratip, Kriskrai

2015-01-01

The fabrication of hydroxyapatite scaffolds for bone tissue engineering applications by using lithography-based additive manufacturing techniques has been introduced due to the abilities to control porous structures with suitable resolutions. In this research, the use of hydroxyapatite cellular structures, which are processed by lithography-based additive manufacturing machine, as a bone tissue engineering scaffold was investigated. The utilization of digital light processing system for additive manufacturing machine in laboratory scale was performed in order to fabricate the hydroxyapatite scaffold, of which biocompatibilities were eventually evaluated by direct contact and cell-culturing tests. In addition, the density and compressive strength of the scaffolds were also characterized. The results show that the hydroxyapatite scaffold at 77% of porosity with 91% of theoretical density and 0.36 MPa of the compressive strength are able to be processed. In comparison with a conventionally sintered hydroxyapatite, the scaffold did not present any cytotoxic signs while the viability of cells at 95.1% was reported. After 14 days of cell-culturing tests, the scaffold was able to be attached by pre-osteoblasts (MC3T3-E1) leading to cell proliferation and differentiation. The hydroxyapatite scaffold for bone tissue engineering was able to be processed by the lithography-based additive manufacturing machine while the biocompatibilities were also confirmed.

From 2D Lithography to 3D Patterning

NARCIS (Netherlands)

Van Zeijl, H.W.; Wei, J.; Shen, C.; Verhaar, T.M.; Sarro, P.M.

2010-01-01

Lithography as developed for IC device fabrication is a high volume high accuracy patterning technology with strong 2 dimensional (2D) characteristics. This 2D nature makes it a challenge to integrate this technology in a 3 dimensional (3D) manufacturing environment. This article addresses the

Pattern Definition with DUV-Lithography at DTU Danchip

DEFF Research Database (Denmark)

Keil, Matthias; Khomtchenko, Elena; Nyholt, Henrik

2014-01-01

Deep ultra violet (DUV) illumination generated with the help of a KrF laser can be utilized to produce components having sizes of some hundreds of nanometers. This light source with its 248nm wavelength is exploited in the DUV-lithography equipment at DTU Danchip in order to fill the resolution gap...... - as shown in fig. 2 - utilizing the possibility of beam shape variations that enables to adapt the resolution and the depth of focus of the stepper to the requirements of the fabricated device. However, generally the highest achievable resolution is dependent on the pattern type - as e.g. pillar, line...... or hole comprising patterns -, its symmetry and the separations between the different structures. The projection lithography tool FPA-3000EX4 from Canon (max. NA=0,6; 1:5 reduction) produces patterns on the wafer within a maximum chip area of 22x22mm2 that can be stitched together with an accuracy of 3σ...

Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography

International Nuclear Information System (INIS)

Li, Li; Zhang, Ziang; Yu, Miao; Song, Zhengxun; Weng, Zhankun; Wang, Zuobin; Li, Wenjun; Wang, Dapeng; Zhao, Le; Peng, Kuiqing

2015-01-01

Although the nanoscale world can already be observed at a diffraction-unlimited resolution using far-field optical microscopy, to make the step from microscopy to lithography still requires a suitable photoresist material system. In this letter, we consider the threshold to be a region with a width characterized by the extreme feature size obtained using a Gaussian beam spot. By narrowing such a region through improvement of the threshold sensitization to intensity in a high-threshold material system, the minimal feature size becomes smaller. By using platinum as the negative photoresist, we demonstrate that high-threshold lithography can be used to fabricate nanowire arrays with a scalable resolution along the axial direction of the linewidth from the micro- to the nanoscale using a nanosecond-pulsed laser source with a wavelength λ 0  = 1064 nm. The minimal feature size is only several nanometers (sub λ 0 /100). Compared with conventional polymer resist lithography, the advantages of high-threshold lithography are sharper pinpoints of laser intensity triggering the threshold response and also higher robustness allowing for large area exposure by a less-expensive nanosecond-pulsed laser

Soft-X-Ray Projection Lithography Using a High-Repetition-Rate Laser-Induced X-Ray Source for Sub-100 Nanometer Lithography Processes

NARCIS (Netherlands)

E. Louis,; F. Bijkerk,; Shmaenok, L.; Voorma, H. J.; van der Wiel, M. J.; Schlatmann, R.; Verhoeven, J.; van der Drift, E. W. J. M.; Romijn, J.; Rousseeuw, B. A. C.; Voss, F.; Desor, R.; Nikolaus, B.

1993-01-01

In this paper we present the status of a joint development programme on soft x-ray projection lithography (SXPL) integrating work on high brightness laser plasma sources. fabrication of multilayer x-ray mirrors. and patterning of reflection masks. We are in the process of optimization of a

An electron undulating ring for VLSI lithography

International Nuclear Information System (INIS)

Tomimasu, T.; Mikado, T.; Noguchi, T.; Sugiyama, S.; Yamazaki, T.

1985-01-01

The development of the ETL storage ring ''TERAS'' as an undulating ring has been continued to achieve a wide area exposure of synchrotron radiation (SR) in VLSI lithography. Stable vertical and horizontal undulating motions of stored beams are demonstrated around a horizontal design orbit of TERAS, using two small steering magnets of which one is used for vertical undulating and another for horizontal one. Each steering magnet is inserted into one of the periodic configulation of guide field elements. As one of useful applications of undulaing electron beams, a vertically wide exposure of SR has been demonstrated in the SR lithography. The maximum vertical deviation from the design orbit nCcurs near the steering magnet. The maximum vertical tilt angle of the undulating beam near the nodes is about + or - 2mrad for a steering magnetic field of 50 gauss. Another proposal is for hith-intensity, uniform and wide exposure of SR from a wiggler installed in TERAS, using vertical and horizontal undulating motions of stored beams. A 1.4 m long permanent magnet wiggler has been installed for this purpose in this April

Microfabrication of pre-aligned fiber bundle couplers using ultraviolet lithography of SU-8

OpenAIRE

Yang, Ren; Soper, Steven A.; Wang, Wanjun

2006-01-01

This paper describes the design, microfabrication and testing of a pre-aligned array of fiber couplers using direct UV-lithography of SU-8. The fiber coupler array includes an out-of-plane refractive microlens array and two fiberport collimator arrays. With the optical axis of the pixels parallel to the substrate, each pixel of the microlens array can be pre-aligned with the corresponding pixels of the fiberport collimator array as defined by the lithography mask design. This out-of-plane pol...

Marker Pen Lithography for Flexible and Curvilinear On-Chip Energy Storage

KAUST Repository

Jiang, Qiu

2015-07-14

On-chip energy storage using microsupercapacitors can serve the dual role of supplementing batteries for pulse power delivery, and replacement of bulky electrolytic capacitors in ac-line filtering applications. Despite complexity and processing costs, microfabrication techniques are being employed in fabricating a great variety of microsupercapacitor devices. Here, a simple, cost-effective, and versatile strategy is proposed to fabricate flexible and curvilinear microsupercapacitors (MSCs). The protocol involves writing sacrificial ink patterns using commercial marker pens on rigid, flexible, and curvilinear substrates. It is shown that this process can be used in both lift-off and etching modes, and the possibility of multistack design of active materials using simple pen lithography is demonstrated. As a prototype, this method is used to produce conducting polymer MSCs involving both poly(3,4-ethylenedioxythiophene), polyaniline, and metal oxide (MnO2) electrode materials. Typical values of energy density in the range of 5-11 mWh cm-3 at power densities of 1-6 W cm-3 are achieved, which is comparable to thin film batteries and superior to the carbon and metal oxide based microsupercapacitors reported in the literature. The simplicity and broad scope of this innovative strategy can open up new avenues for easy and scalable fabrication of a wide variety of on-chip energy storage devices. © 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim.

Marker Pen Lithography for Flexible and Curvilinear On-Chip Energy Storage

KAUST Repository

Jiang, Qiu; Kurra, Narendra; Alshareef, Husam N.

2015-01-01

On-chip energy storage using microsupercapacitors can serve the dual role of supplementing batteries for pulse power delivery, and replacement of bulky electrolytic capacitors in ac-line filtering applications. Despite complexity and processing costs, microfabrication techniques are being employed in fabricating a great variety of microsupercapacitor devices. Here, a simple, cost-effective, and versatile strategy is proposed to fabricate flexible and curvilinear microsupercapacitors (MSCs). The protocol involves writing sacrificial ink patterns using commercial marker pens on rigid, flexible, and curvilinear substrates. It is shown that this process can be used in both lift-off and etching modes, and the possibility of multistack design of active materials using simple pen lithography is demonstrated. As a prototype, this method is used to produce conducting polymer MSCs involving both poly(3,4-ethylenedioxythiophene), polyaniline, and metal oxide (MnO2) electrode materials. Typical values of energy density in the range of 5-11 mWh cm-3 at power densities of 1-6 W cm-3 are achieved, which is comparable to thin film batteries and superior to the carbon and metal oxide based microsupercapacitors reported in the literature. The simplicity and broad scope of this innovative strategy can open up new avenues for easy and scalable fabrication of a wide variety of on-chip energy storage devices. © 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim.

Fabrication of monolithic microfluidic channels in diamond with ion beam lithography

Science.gov (United States)

Picollo, F.; Battiato, A.; Boarino, L.; Ditalia Tchernij, S.; Enrico, E.; Forneris, J.; Gilardino, A.; Jakšić, M.; Sardi, F.; Skukan, N.; Tengattini, A.; Olivero, P.; Re, A.; Vittone, E.

2017-08-01

In the present work, we report on the monolithic fabrication by means of ion beam lithography of hollow micro-channels within a diamond substrate, to be employed for microfluidic applications. The fabrication strategy takes advantage of ion beam induced damage to convert diamond into graphite, which is characterized by a higher reactivity to oxidative etching with respect to the chemically inert pristine structure. This phase transition occurs in sub-superficial layers thanks to the peculiar damage profile of MeV ions, which mostly damage the target material at their end of range. The structures were obtained by irradiating commercial CVD diamond samples with a micrometric collimated C+ ion beam at three different energies (4 MeV, 3.5 MeV and 3 MeV) at a total fluence of 2 × 1016 cm-2. The chosen multiple-energy implantation strategy allows to obtain a thick box-like highly damaged region ranging from 1.6 μm to 2.1 μm below the sample surface. High-temperature annealing was performed to both promote the graphitization of the ion-induced amorphous layer and to recover the pristine crystalline structure in the cap layer. Finally, the graphite was removed by ozone etching, obtaining monolithic microfluidic structures. These prototypal microfluidic devices were tested injecting aqueous solutions and the evidence of the passage of fluids through the channels was confirmed by confocal fluorescent microscopy.

Structure formation in atom lithography using geometric collimation

NARCIS (Netherlands)

Meijer, T.; Beardmore, J.P.; Fabrie, C.G.C.H.M.; van Lieshout, J.P.; Notermans, R.P.M.J.W.; Sang, R.T.; Vredenbregt, E.J.D.; Leeuwen, van K.A.H.

2011-01-01

Atom lithography uses standing wave light fields as arrays of lenses to focus neutral atom beams into line patterns on a substrate. Laser cooled atom beams are commonly used, but an atom beam source with a small opening placed at a large distance from a substrate creates atom beams which are locally

Architectures of prototypes and architectural prototyping

DEFF Research Database (Denmark)

Hansen, Klaus Marius; Christensen, Michael; Sandvad, Elmer

1998-01-01

together as a team, but developed a prototype that more than fulfilled the expectations of the shipping company. The prototype should: - complete the first major phase within 10 weeks, - be highly vertical illustrating future work practice, - continuously live up to new requirements from prototyping......This paper reports from experience obtained through development of a prototype of a global customer service system in a project involving a large shipping company and a university research group. The research group had no previous knowledge of the complex business of shipping and had never worked...... sessions with users, - evolve over a long period of time to contain more functionality - allow for 6-7 developers working intensively in parallel. Explicit focus on the software architecture and letting the architecture evolve with the prototype played a major role in resolving these conflicting...

Collaborative Prototyping

DEFF Research Database (Denmark)

Bogers, Marcel; Horst, Willem

2014-01-01

of the prototyping process, the actual prototype was used as a tool for communication or development, thus serving as a platform for the cross-fertilization of knowledge. In this way, collaborative prototyping leads to a better balance between functionality and usability; it translates usability problems into design......This paper presents an inductive study that shows how collaborative prototyping across functional, hierarchical, and organizational boundaries can improve the overall prototyping process. Our combined action research and case study approach provides new insights into how collaborative prototyping...... can provide a platform for prototype-driven problem solving in early new product development (NPD). Our findings have important implications for how to facilitate multistakeholder collaboration in prototyping and problem solving, and more generally for how to organize collaborative and open innovation...

Development of a multi-electrode extrapolation chamber as a prototype of a primary standard for the realization of the unit of the absorbed dose to water for beta brachytherapy sources

CERN Document Server

Bambynek, M

2002-01-01

The prototype of a primary standard has been developed, built and tested, which enables the realization of the unit of the absorbed dose to water for beta brachytherapy sources. In the course of the development of the prototype, the recommendations of the American Association of Physicists in Medicine (AAPM) Task Group 60 (TG60) and the Deutsche Gesellschaft fuer Medizinische Physik (DGMP) Arbeitskreis 18 (AK18) were taken into account. The prototype is based on a new multi-electrode extrapolation chamber (MEC) which meets, in particular, the requirements on high spatial resolution and small uncertainty. The central part of the MEC is a segmented collecting electrode which was manufactured in the clean room center of PTB by means of electron beam lithography on a wafer. A precise displacement device consisting of three piezoelectric macrotranslators has been incorporated to move the wafer collecting electrode against the entrance window. For adjustment of the wafer collecting electrode parallel to the entranc...

Imbalance aware lithography hotspot detection: a deep learning approach

Science.gov (United States)

Yang, Haoyu; Luo, Luyang; Su, Jing; Lin, Chenxi; Yu, Bei

2017-07-01

With the advancement of very large scale integrated circuits (VLSI) technology nodes, lithographic hotspots become a serious problem that affects manufacture yield. Lithography hotspot detection at the post-OPC stage is imperative to check potential circuit failures when transferring designed patterns onto silicon wafers. Although conventional lithography hotspot detection methods, such as machine learning, have gained satisfactory performance, with the extreme scaling of transistor feature size and layout patterns growing in complexity, conventional methodologies may suffer from performance degradation. For example, manual or ad hoc feature extraction in a machine learning framework may lose important information when predicting potential errors in ultra-large-scale integrated circuit masks. We present a deep convolutional neural network (CNN) that targets representative feature learning in lithography hotspot detection. We carefully analyze the impact and effectiveness of different CNN hyperparameters, through which a hotspot-detection-oriented neural network model is established. Because hotspot patterns are always in the minority in VLSI mask design, the training dataset is highly imbalanced. In this situation, a neural network is no longer reliable, because a trained model with high classification accuracy may still suffer from a high number of false negative results (missing hotspots), which is fatal in hotspot detection problems. To address the imbalance problem, we further apply hotspot upsampling and random-mirror flipping before training the network. Experimental results show that our proposed neural network model achieves comparable or better performance on the ICCAD 2012 contest benchmark compared to state-of-the-art hotspot detectors based on deep or representative machine leaning.

Durable diamond-like carbon templates for UV nanoimprint lithography

International Nuclear Information System (INIS)

Tao, L; Ramachandran, S; Nelson, C T; Overzet, L J; Goeckner, M; Lee, G; Hu, W; Lin, M; Willson, C G; Wu, W

2008-01-01

The interaction between resist and template during the separation process after nanoimprint lithography (NIL) can cause the formation of defects and damage to the templates and resist patterns. To alleviate these problems, fluorinated self-assembled monolayers (F-SAMs, i.e. tridecafluoro-1,1,2,2,tetrahydrooctyl trichlorosilane or FDTS) have been employed as template release coatings. However, we find that the FDTS coating undergoes irreversible degradation after only 10 cycles of UV nanoimprint processes with SU-8 resist. The degradation includes a 28% reduction in surface F atoms and significant increases in the surface roughness. In this paper, diamond-like carbon (DLC) films were investigated as an alternative material not only for coating but also for direct fabrication of nanoimprint templates. DLC films deposited on quartz templates in a plasma enhanced chemical vapor deposition system are shown to have better chemical and physical stability than FDTS. After the same 10 cycles of UV nanoimprints, the surface composition as well as the roughness of DLC films were found to be unchanged. The adhesion energy between the DLC surface and SU-8 is found to be smaller than that of FDTS despite the slightly higher total surface energy of DLC. DLC templates with 40 nm features were fabricated using e-beam lithography followed by Cr lift-off and reactive ion etching. UV nanoimprinting using the directly patterned DLC templates in SU-8 resist demonstrates good pattern transfer fidelity and easy template-resist separation. These results indicate that DLC is a promising material for fabricating durable templates for UV nanoimprint lithography

Effects of synchrotron radiation spectrum energy on polymethyl methacrylate photosensitivity to deep x-ray lithography

International Nuclear Information System (INIS)

Mekaru, Harutaka; Utsumi, Yuichi; Hattori, Tadashi

2003-01-01

Since X-ray lithography requires a high photon flux to achieve deep resist exposure, a synchrotron radiation beam, which is not monochromatized, is generally used as a light source. If the synchrotron radiation beam is monochromatized, photon flux will decrease rapidly. Because of this reason, the wavelength dependence of the resist sensitivity has not been investigated for deep X-ray lithography. Measuring the spectrum of a white beam with a Si solid-state detector (SSD) is difficult because a white beam has a high intensity and an SSD has a high sensitivity. We were able to measure the spectrum and the photocurrent of a white beam from a beam line used for deep X-ray lithography by keeping the ring current below 0.05 mA. We evaluated the characteristics of the output beam based on the measured spectrum and photocurrent, and used them to investigate the relationship between the total exposure energy and the dose-processing depth with polymethyl methacrylate (PMMA). We found that it is possible to guess the processing depth of PMMA from the total exposure energy in deep X-ray lithography. (author)

Deep X-ray lithography for the fabrication of microstructures at ELSA

Energy Technology Data Exchange (ETDEWEB)

Pantenburg, F.J. E-mail: pantenburg@imt.fzk.de; Mohr, J

2001-07-21

Two beamlines at the Electron Stretcher Accelerator (ELSA) of Bonn University are dedicated for the production of microstructures by deep X-ray lithography with synchrotron radiation. They are equipped with state-of-the-art X-ray scanners, maintained and used by Forschungszentrum Karlsruhe. Polymer microstructure heights between 30 and 3000 {mu}m are manufactured regularly for research and industrial projects. This requires different characteristic energies. Therefore, ELSA operates routinely at 1.6, 2.3 and 2.7 GeV, for high-resolution X-ray mask fabrication, deep and ultra-deep X-ray lithography, respectively. The experimental setup, as well as the structure quality of deep and ultra deep X-ray lithographic microstructures are described.

Deep X-ray lithography for the fabrication of microstructures at ELSA

Science.gov (United States)

Pantenburg, F. J.; Mohr, J.

2001-07-01

Two beamlines at the Electron Stretcher Accelerator (ELSA) of Bonn University are dedicated for the production of microstructures by deep X-ray lithography with synchrotron radiation. They are equipped with state-of-the-art X-ray scanners, maintained and used by Forschungszentrum Karlsruhe. Polymer microstructure heights between 30 and 3000 μm are manufactured regularly for research and industrial projects. This requires different characteristic energies. Therefore, ELSA operates routinely at 1.6, 2.3 and 2.7 GeV, for high-resolution X-ray mask fabrication, deep and ultra-deep X-ray lithography, respectively. The experimental setup, as well as the structure quality of deep and ultra deep X-ray lithographic microstructures are described.

Deep X-ray lithography for the fabrication of microstructures at ELSA

International Nuclear Information System (INIS)

Pantenburg, F.J.; Mohr, J.

2001-01-01

Two beamlines at the Electron Stretcher Accelerator (ELSA) of Bonn University are dedicated for the production of microstructures by deep X-ray lithography with synchrotron radiation. They are equipped with state-of-the-art X-ray scanners, maintained and used by Forschungszentrum Karlsruhe. Polymer microstructure heights between 30 and 3000 μm are manufactured regularly for research and industrial projects. This requires different characteristic energies. Therefore, ELSA operates routinely at 1.6, 2.3 and 2.7 GeV, for high-resolution X-ray mask fabrication, deep and ultra-deep X-ray lithography, respectively. The experimental setup, as well as the structure quality of deep and ultra deep X-ray lithographic microstructures are described

Deep X-ray lithography for the fabrication of microstructures at ELSA

CERN Document Server

Pantenburg, F J

2001-01-01

Two beamlines at the Electron Stretcher Accelerator (ELSA) of Bonn University are dedicated for the production of microstructures by deep X-ray lithography with synchrotron radiation. They are equipped with state-of-the-art X-ray scanners, maintained and used by Forschungszentrum Karlsruhe. Polymer microstructure heights between 30 and 3000 mu m are manufactured regularly for research and industrial projects. This requires different characteristic energies. Therefore, ELSA operates routinely at 1.6, 2.3 and 2.7 GeV, for high-resolution X-ray mask fabrication, deep and ultra-deep X-ray lithography, respectively. The experimental setup, as well as the structure quality of deep and ultra deep X-ray lithographic microstructures are described.

The application of phase grating to CLM technology for the sub-65nm node optical lithography

Science.gov (United States)

Yoon, Gi-Sung; Kim, Sung-Hyuck; Park, Ji-Soong; Choi, Sun-Young; Jeon, Chan-Uk; Shin, In-Kyun; Choi, Sung-Woon; Han, Woo-Sung

2005-06-01

As a promising technology for sub-65nm node optical lithography, CLM(Chrome-Less Mask) technology among RETs(Resolution Enhancement Techniques) for low k1 has been researched worldwide in recent years. CLM has several advantages, such as relatively simple manufacturing process and competitive performance compared to phase-edge PSM's. For the low-k1 lithography, we have researched CLM technique as a good solution especially for sub-65nm node. As a step for developing the sub-65nm node optical lithography, we have applied CLM technology in 80nm-node lithography with mesa and trench method. From the analysis of the CLM technology in the 80nm lithography, we found that there is the optimal shutter size for best performance in the technique, the increment of wafer ADI CD varied with pattern's pitch, and a limitation in patterning various shapes and size by OPC dead-zone - OPC dead-zone in CLM technique is the specific region of shutter size that dose not make the wafer CD increased more than a specific size. And also small patterns are easily broken, while fabricating the CLM mask in mesa method. Generally, trench method has better optical performance than mesa. These issues have so far restricted the application of CLM technology to a small field. We approached these issues with 3-D topographic simulation tool and found that the issues could be overcome by applying phase grating in trench-type CLM. With the simulation data, we made some test masks which had many kinds of patterns with many different conditions and analyzed their performance through AIMS fab 193 and exposure on wafer. Finally, we have developed the CLM technology which is free of OPC dead-zone and pattern broken in fabrication process. Therefore, we can apply the CLM technique into sub-65nm node optical lithography including logic devices.

Rethink! prototyping transdisciplinary concepts of prototyping

CERN Document Server

Nagy, Emilia; Stark, Rainer

2016-01-01

In this book, the authors describe the findings derived from interaction and cooperation between scientific actors employing diverse practices. They reflect on distinct prototyping concepts and examine the transformation of development culture in their fusion to hybrid approaches and solutions. The products of tomorrow are going to be multifunctional, interactive systems – and already are to some degree today. Collaboration across multiple disciplines is the only way to grasp their complexity in design concepts. This underscores the importance of reconsidering the prototyping process for the development of these systems, particularly in transdisciplinary research teams. “Rethinking Prototyping – new hybrid concepts for prototyping” was a transdisciplinary project that took up this challenge. The aim of this programmatic rethinking was to come up with a general concept of prototyping by combining innovative prototyping concepts, which had been researched and developed in three sub-projects: “Hybrid P...

Software-based data path for raster-scanned multi-beam mask lithography

Science.gov (United States)

Rajagopalan, Archana; Agarwal, Ankita; Buck, Peter; Geller, Paul; Hamaker, H. Christopher; Rao, Nagswara

2016-10-01

According to the 2013 SEMATECH Mask Industry Survey,i roughly half of all photomasks are produced using laser mask pattern generator ("LMPG") lithography. LMPG lithography can be used for all layers at mature technology nodes, and for many non-critical and semi-critical masks at advanced nodes. The extensive use of multi-patterning at the 14-nm node significantly increases the number of critical mask layers, and the transition in wafer lithography from positive tone resist to negative tone resist at the 14-nm design node enables the switch from advanced binary masks back to attenuated phase shifting masks that require second level writes to remove unwanted chrome. LMPG lithography is typically used for second level writes due to its high productivity, absence of charging effects, and versatile non-actinic alignment capability. As multi-patterning use expands from double to triple patterning and beyond, the number of LMPG second level writes increases correspondingly. The desire to reserve the limited capacity of advanced electron beam writers for use when essential is another factor driving the demand for LMPG capacity. The increasing demand for cost-effective productivity has kept most of the laser mask writers ever manufactured running in production, sometimes long past their projected lifespan, and new writers continue to be built based on hardware developed some years ago.ii The data path is a case in point. While state-ofthe- art when first introduced, hardware-based data path systems are difficult to modify or add new features to meet the changing requirements of the market. As data volumes increase, design styles change, and new uses are found for laser writers, it is useful to consider a replacement for this critical subsystem. The availability of low-cost, high-performance, distributed computer systems combined with highly scalable EDA software lends itself well to creating an advanced data path system. EDA software, in routine production today, scales

Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication

KAUST Repository

Wan, Weiwei; Lin, Liang; Xu, Yelong; Guo, Xu; Liu, Xiaoping; Ge, Haixiong; Lu, Minghui; Cui, Bo; Chen, Yanfeng

2014-01-01

manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage

Fabrication of nanoparticle and protein nanostructures using nanoimprint lithography

NARCIS (Netherlands)

Maury, P.A.

2007-01-01

Nanoimprint lithography (NIL) was used as a tool to pattern self-assembled monolayers (SAMs) on silicon substrates because of its ability to pattern in the micrometer and nanometer ranges. The resulting polymer template behaved as a physical barrier preventing the formation of a SAM in the covered

The fabrication of nanopatterns with Au nanoparticles-embedded micelles via nanoimprint lithography

Energy Technology Data Exchange (ETDEWEB)

Lee, Jung-Pil; Kim, Eun-Uk; Koh, Haeng-Deog; Kang, Nam-Goo; Jung, Gun-Young; Lee, Jae-Suk, E-mail: gyjung@gist.ac.k, E-mail: jslee@gist.ac.k [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu Gwangju 500-712 (Korea, Republic of)

2009-09-09

We fabricated nanopatterns with Au nanoparticles-embedded micelles (Au-micelles) by self-assembly of block copolymers via nanoimprint lithography. The micelle structure prepared by self-assembled block copolymers was used as a template for the synthesis of Au nanoparticles (Au NPs). Au NPs were synthesized in situ inside the micelles of polystyrene-block-poly(2-vinylpyridine) (PS- b-P2VP). Au-micelles were arranged on the trenches of the polymer template, which was imprinted by nanoimprint lithography. The fabrication of line-type and dot-type nanopatterns was carried out by the combined method. In addition, multilayer nanopatterns of the Au-micelles were also proposed.

Single-mode solid-state polymer dye laser fabricated with standard I-line UV lithography

DEFF Research Database (Denmark)

Balslev, Søren; Mironov, Andrej; Nilsson, Daniel

2005-01-01

We present single-mode solid-state polymer dye lasers fabricated with standard UV lithography. The lasers use a high-order Bragg grating and rely on index-tuning of a photosensitive polymer for waveguiding. The gain medium is Rhodamine 6G.......We present single-mode solid-state polymer dye lasers fabricated with standard UV lithography. The lasers use a high-order Bragg grating and rely on index-tuning of a photosensitive polymer for waveguiding. The gain medium is Rhodamine 6G....

High Excitation Efficiency of Channel Plasmon Polaritons in Tailored, UV-Lithography-Defined V-Grooves

DEFF Research Database (Denmark)

Smith, Cameron; Thilsted, Anil Haraksingh; Garcia-Ortiz, Cesar E.

2014-01-01

We demonstrate >50% conversion of light to V-groove channel plasmon-polaritons (CPPs) via compact waveguide-termination mirrors. Devices are fabricated using UV-lithography and crystallographic silicon etching. The V-shape is tailored by thermal oxidation to support confined CPPs.......We demonstrate >50% conversion of light to V-groove channel plasmon-polaritons (CPPs) via compact waveguide-termination mirrors. Devices are fabricated using UV-lithography and crystallographic silicon etching. The V-shape is tailored by thermal oxidation to support confined CPPs....

Effect of strain rate on cavity closure during compression between flat platens using superplastic tin-lead alloy

International Nuclear Information System (INIS)

Zaid, A.I.O.; Al-Tamimi, M.M.

2011-01-01

Superplasticity is a feature of a material or alloy which allows the material to deform plastically to an extremely large strain at low values of stress under certain loading conditions of strain rate and temperature. Eutectic tin-lead alloy is a practical material for research investigations as it possesses a superplastic behavior at room temperature and low strain rate which makes it a useful tool in simulating the ordinary engineering materials at high strain rate and temperature. This alloy has been extensively used as a model material to simulate behavior of engineering materials at high strain rates and temperatures. In this paper, superplastic tin-lead alloy was used at room temperature to simulate the closure of cavities in steels at high temperatures in the hot region under dynamic loading (high strain rate) under the effect of compressive loads using flat platens (open dies). Hollow specimens having different values of bore diameter (D/sub b/) to outer diameter (D/sub out/), of the same height and volume were investigated under different values of height reduction percentages ranging from 20% to 80% , and the percentage of cavity closure at each reduction percentage was determined. It was found that the cavity closure percentage increases or decreases at slow rate for reduction percentage in height less than 40% and increases more rapidly for reduction percentages in height above this value. Furthermore, specimens having smaller values of ratio (D/sub b//D/sub out/) resulted in higher percentage of cavity closure than specimens having higher ratios at the same value of reduction in height percentage. Complete cavity closure has occurred in specimens having the ratios of 0.1 and 0.2 at 75% reduction in height. (author)

Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

International Nuclear Information System (INIS)

Altun, Ali Ozhan; Jeong, Jun-Ho; Rha, Jong-Joo; Kim, Ki-Don; Lee, Eung-Sug

2007-01-01

Cubic boron nitride (c-BN) is one of the hardest known materials (second after diamond). It has a high level of chemical resistance and high UV transmittance. In this study, a stamp for ultra-violet nanoimprint lithography (UV-NIL) was fabricated using a bi-layered BN film deposited on a quartz substrate. Deposition of the BN was done using RF magnetron sputtering. A hexagonal boron nitride (h-BN) layer was deposited for 30 min before c-BN was deposited for 30 min. The thickness of the film was measured as 160 nm. The phase of the c-BN layer was investigated using Fourier transform infrared (FTIR) spectrometry, and it was found that the c-BN layer has a 40% cubic phase. The deposited film was patterned using focused ion beam (FIB) lithography for use as a UV-NIL stamp. Line patterns were fabricated with the line width and line distance set at 150 and 150 nm, respectively. The patterning process was performed by applying different currents to observe the effect of the current value on the pattern profile. The fabricated patterns were investigated using AFM, and it was found that the pattern fabricated by applying a current value of 50 picoamperes (pA) has a better profile with a 65 nm line depth. The UV transmittance of the 160 nm thick film was measured to be 70-86%. The hardness and modulus of the BN was measured to be 12 and 150 GPa, respectively. The water contact angle of the stamp surface was measured at 75 0 . The stamp was applied to UV-NIL without coating with an anti-adhesion layer. Successful imprinting was proved via scanning electron microscope (SEM) images of the imprinted resin

Combined e-beam lithography using different energies

Czech Academy of Sciences Publication Activity Database

Krátký, Stanislav; Kolařík, Vladimír; Horáček, Miroslav; Meluzín, Petr; Král, Stanislav

2017-01-01

Roč. 177, JUN (2017), s. 30-34 ISSN 0167-9317 R&D Projects: GA TA ČR TE01020233; GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : grayscale e-beam lithography * mix and match process * absorbed energy density * resist sensitivity * micro-optical elements Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Nano-processes (applications on nano-scale) Impact factor: 1.806, year: 2016

Fabrication of periodically ordered diamond nanostructures by microsphere lithography

Czech Academy of Sciences Publication Activity Database

Domonkos, Mária; Ižák, Tibor; Štolcová, L.; Proška, J.; Kromka, Alexander

2014-01-01

Roč. 251, č. 12 (2014), s. 2587-2592 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : CVD growth * diamond * microsphere lithography * selective area deposition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.489, year: 2014

Programmable imprint lithography template

Science.gov (United States)

Cardinale, Gregory F [Oakland, CA; Talin, Albert A [Livermore, CA

2006-10-31

A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

Plasmonic Lithography Utilizing Epsilon Near Zero Hyperbolic Metamaterial.

Science.gov (United States)

Chen, Xi; Zhang, Cheng; Yang, Fan; Liang, Gaofeng; Li, Qiaochu; Guo, L Jay

2017-10-24

In this work, a special hyperbolic metamaterial (HMM) metamaterial is investigated for plasmonic lithography of period reduction patterns. It is a type II HMM (ϵ ∥ 0) whose tangential component of the permittivity ϵ ∥ is close to zero. Due to the high anisotropy of the type II epsilon-near-zero (ENZ) HMM, only one plasmonic mode can propagate horizontally with low loss in a waveguide system with ENZ HMM as its core. This work takes the advantage of a type II ENZ HMM composed of aluminum/aluminum oxide films and the associated unusual mode to expose a photoresist layer in a specially designed lithography system. Periodic patterns with a half pitch of 58.3 nm were achieved due to the interference of third-order diffracted light of the grating. The lines were 1/6 of the mask with a period of 700 nm and ∼1/7 of the wavelength of the incident light. Moreover, the theoretical analyses performed are widely applicable to structures made of different materials such as silver as well as systems working at deep ultraviolet wavelengths including 193, 248, and 365 nm.

Laser-produced plasma-extreme ultraviolet light source for next generation lithography

International Nuclear Information System (INIS)

Nishihara, Katsunobu; Nishimura, Hiroaki; Gamada, Kouhei; Murakami, Masakatsu; Mochizuki, Takayasu; Sasaki, Akira; Sunahara, Atsushi

2005-01-01

Extreme ultraviolet (EUV) lithography is the most promising candidate for the next generation lithography for the 45 nm technology node and below. EUV light sources under consideration use 13.5 nm radiations from multicharged xenon, tin and lithium ions, because Mo/Si multiplayer mirrors have high reflectivity at this wavelength. A review of laser-produced plasma (LPP) EUV light sources is presented with a focus on theoretical and experimental studies under the auspices of the Leading Project promoted by MEXT. We discuss three theoretical topics: atomic processes in the LPP-EUV light source, conversion efficiency from laser light to EUV light at 13.5 nm wave-length with 2% bound width, and fast ion spectra. The properties of EUV emission from tin and xenon plasmas are also shown based on experimental results. (author)

Development of compact synchrotron light source LUNA for x-ray lithography

International Nuclear Information System (INIS)

Takahashi, M.; Mandai, S.; Hoshi, Y.; Kohno, Y.

1992-01-01

A compact synchrotron light source LUNA has been developed by Ishikawajima-Harima Heavy Industries Co., Ltd. (IHI), especially for x-ray lithography. It consists of a 45-MeV linac as an electron injector and an 800-MeV synchrotron. The peak wavelength of synchrotron radiation is around 10 A. The installation of LUNA was completed in April 1989 at the Tsuchiura Facility of IHI. The synchrotron radiation was first observed in December 1989. A stored beam current of 50 mA at 800 MeV and a lifetime over 1 h have been achieved. At present, experiments are still continuing to increase the stored current and the lifetime. X-ray lithography testing is scheduled to begin in a clean room in this facility. This paper describes the outline of LUNA and the present status

Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography.

Science.gov (United States)

Cummins, Cian; Bell, Alan P; Morris, Michael A

2017-09-30

The prolonged and aggressive nature of scaling to augment the performance of silicon integrated circuits (ICs) and the technical challenges and costs associated with this has led to the study of alternative materials that can use processing schemes analogous to semiconductor manufacturing. We examine the status of recent efforts to develop active device elements using nontraditional lithography in this article, with a specific focus on block copolymer (BCP) feature patterning. An elegant route is demonstrated using directed self-assembly (DSA) of BCPs for the fabrication of aligned tungsten trioxide (WO₃) nanowires towards nanoelectronic device application. The strategy described avoids conventional lithography practices such as optical patterning as well as repeated etching and deposition protocols and opens up a new approach for device development. Nanoimprint lithography (NIL) silsesquioxane (SSQ)-based trenches were utilized in order to align a cylinder forming poly(styrene)- block -poly(4-vinylpyridine) (PS- b -P4VP) BCP soft template. We outline WO₃ nanowire fabrication using a spin-on process and the symmetric current-voltage characteristics of the resulting Ti/Au (5 nm/45 nm) contacted WO₃ nanowires. The results highlight the simplicity of a solution-based approach that allows creating active device elements and controlling the chemistry of specific self-assembling building blocks. The process enables one to dictate nanoscale chemistry with an unprecedented level of sophistication, forging the way for next-generation nanoelectronic devices. We lastly outline views and future research studies towards improving the current platform to achieve the desired device performance.

Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography

Directory of Open Access Journals (Sweden)

Cian Cummins

2017-09-01

Full Text Available The prolonged and aggressive nature of scaling to augment the performance of silicon integrated circuits (ICs and the technical challenges and costs associated with this has led to the study of alternative materials that can use processing schemes analogous to semiconductor manufacturing. We examine the status of recent efforts to develop active device elements using nontraditional lithography in this article, with a specific focus on block copolymer (BCP feature patterning. An elegant route is demonstrated using directed self-assembly (DSA of BCPs for the fabrication of aligned tungsten trioxide (WO3 nanowires towards nanoelectronic device application. The strategy described avoids conventional lithography practices such as optical patterning as well as repeated etching and deposition protocols and opens up a new approach for device development. Nanoimprint lithography (NIL silsesquioxane (SSQ-based trenches were utilized in order to align a cylinder forming poly(styrene-block-poly(4-vinylpyridine (PS-b-P4VP BCP soft template. We outline WO3 nanowire fabrication using a spin-on process and the symmetric current-voltage characteristics of the resulting Ti/Au (5 nm/45 nm contacted WO3 nanowires. The results highlight the simplicity of a solution-based approach that allows creating active device elements and controlling the chemistry of specific self-assembling building blocks. The process enables one to dictate nanoscale chemistry with an unprecedented level of sophistication, forging the way for next-generation nanoelectronic devices. We lastly outline views and future research studies towards improving the current platform to achieve the desired device performance.

Inspection of imprint lithography patterns for semiconductor and patterned media

Science.gov (United States)

Resnick, Douglas J.; Haase, Gaddi; Singh, Lovejeet; Curran, David; Schmid, Gerard M.; Luo, Kang; Brooks, Cindy; Selinidis, Kosta; Fretwell, John; Sreenivasan, S. V.

2010-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This work summarizes the results of defect inspections of semiconductor masks, wafers and hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical and e-beam based automated inspection tools. For the semiconductor market, a test mask was designed which included dense features (with half pitches ranging between 32 nm and 48 nm) containing an extensive array of programmed defects. For this work, both e-beam inspection and optical inspection were used to detect both random defects and the programmed defects. Analytical SEMs were then used to review the defects detected by the inspection. Defect trends over the course of many wafers were observed with another test mask using a KLA-T 2132 optical inspection tool. The primary source of defects over 2000 imprints were particle related. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity, scattered light, phase shift, etc. Defects that have been identified in this manner are further characterized according to the morphology

The DARPA compact Superconducting X-Ray Lithography Source features

International Nuclear Information System (INIS)

Heese, R.; Kalsi, S.; Leung, E.

1991-01-01

Under DARPA sponsorship, a compact Superconducting X-Ray Lithography Source (SXLS) is being designed and built by the Brookhaven National Laboratory (BNL) with industry participation from Grumman Corporation and General Dynamics. This source is optimized for lithography work for sub-micron high density computer chips, and is about the size of a billiard table (1.5 m x 4.0 m). The machine has a racetrack configuration with two 180 degree bending magnets being designed and built by General Dynamics under a subcontract with Grumman Corporation. The machine will have 18 photon ports which would deliver light peaked at a wave length of 10 Angstroms. Grumman is commercializing the SXLS device and plans to book orders for delivery of industrialized SXLS (ISXLS) versions in 1995. This paper will describe the major features of this device. The commercial machine will be equipped with a fully automated user-friendly control systems, major features of which are already working on a compact warm dipole ring at BNL. This ring has normal dipole magnets with dimensions identical to the SXLS device, and has been successfully commissioned

Mask Materials and Designs for Extreme Ultra Violet Lithography

Science.gov (United States)

Kim, Jung Sik; Ahn, Jinho

2018-03-01

Extreme ultra violet lithography (EUVL) is no longer a future technology but is going to be inserted into mass production of semiconductor devices of 7 nm technology node in 2018. EUVL is an extension of optical lithography using extremely short wavelength (13.5 nm). This short wavelength requires major modifications in the optical systems due to the very strong absorption of EUV light by materials. Refractive optics can no longer be used, and reflective optics is the only solution to transfer image from mask to wafer. This is why we need the multilayer (ML) mirror-based mask as well as an oblique incident angle of light. This paper discusses the principal theory on the EUV mask design and its component materials including ML reflector and EUV absorber. Mask shadowing effect (or mask 3D effect) is explained and its technical solutions like phase shift mask is reviewed. Even though not all the technical issues on EUV mask are handled in this review paper, you will be able to understand the principles determining the performance of EUV masks.

Integration of plant viruses in electron beam lithography nanostructures

International Nuclear Information System (INIS)

Alonso, Jose M; Bittner, Alexander M; Ondarçuhu, Thierry

2013-01-01

Tobacco mosaic virus (TMV) is the textbook example of a virus, and also of a self-assembling nanoscale structure. This tubular RNA/protein architecture has also found applications as biotemplate for the synthesis of nanomaterials such as wires, as tubes, or as nanoparticle assemblies. Although TMV is, being a biological structure, quite resilient to environmental conditions (temperature, chemicals), it cannot be processed in electron beam lithography (eBL) fabrication, which is the most important and most versatile method of nanoscale structuring. Here we present adjusted eBL-compatible processes that allow the incorporation of TMV in nanostructures made of positive and negative tone eBL resists. The key steps are covering TMV by polymer resists, which are only heated to 50 °C, and development (selective dissolution) in carefully selected organic solvents. We demonstrate the post-lithography biochemical functionality of TMV by selective immunocoating of the viral particles, and the use of immobilized TMV as direct immunosensor. Our modified eBL process should be applicable to incorporate a wide range of sensitive materials in nanofabrication schemes. (paper)

Architectural prototyping

DEFF Research Database (Denmark)

Bardram, Jakob Eyvind; Christensen, Henrik Bærbak; Hansen, Klaus Marius

2004-01-01

A major part of software architecture design is learning how specific architectural designs balance the concerns of stakeholders. We explore the notion of "architectural prototypes", correspondingly architectural prototyping, as a means of using executable prototypes to investigate stakeholders...

Eco-friendly electron beam lithography using water-developable resist material derived from biomass

Science.gov (United States)

Takei, Satoshi; Oshima, Akihiro; Wakabayashi, Takanori; Kozawa, Takahiro; Tagawa, Seiichi

2012-07-01

We investigated the eco-friendly electron beam (EB) lithography using a high-sensitive negative type of water-developable resist material derived from biomass on hardmask layer for tri-layer processes. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of trimethylphenylammonium hydroxide. The images of 200 nm line and 800 nm space pattern with exposure dose of 7.0 μC/cm2 and CF4 etching selectivity of 2.2 with hardmask layer were provided by specific process conditions.

Examination for optimization of synchrotron radiation spectrum for the x ray depth lithography

Science.gov (United States)

Dany, Raimund

1992-06-01

The effect of reducing the vertical distribution of synchrotron radiation on its spectral distribution is examined through resin irradiation. The resulting filter effect is compared to that of absorption filters. Transmission coefficients of titanium, gold, and polyamide were calculated from linear absorption coefficients with the Beer law. The use of a diaphragm in X-ray depth lithography, which is the first step of the LIGA (Lithography Galvanoforming Molding) process, is discussed. A calorimetric device for determining the synchrotron radiation power and distribution was developed and tested. Measurements at the ELSA storage ring show a strong dependence of the vertical emittance on the electron current.

„New approaches to atomic force microscope lithography on silicon"

DEFF Research Database (Denmark)

Birkelund, Karen; Thomsen, Erik Vilain; Rasmussen, Jan Pihl

1997-01-01

We have investigated new approaches to the formation of conducting nanowires on crystalline silicon surfaces using atomic force microscope (AFM) lithography. To increase processing speed and reduce wear of the AFM tip, large-scale structures are formed with a direct laser write setup, while the AFM...

High-quality global hydrogen silsequioxane contact planarization for nanoimprint lithography

NARCIS (Netherlands)

Büyükköse, S.; Vratzov, Boris; van der Wiel, Wilfred Gerard

2011-01-01

The authors present a novel global contact planarization technique based on the spin-on-glass material hydrogen silsequioxane (HSQ) and demonstrate its excellent performance on patterns of 70 nm up to several microns generated by UV-based nanoimprint lithography. The HSQ layer (∼165 nm) is spin

Reverse pattern duplication utilizing a two-step metal lift-off process via nanoimprint lithography

International Nuclear Information System (INIS)

Song, Sun-Sik; Kim, Eun-Uk; Jung, Hee-Soo; Kim, Ki-Seok; Jung, Gun-Young

2009-01-01

A two-step metal lift-off process using a selective etching recipe was demonstrated as a new technique for the reverse pattern fabrication of the features of a master stamp via a UV-based nanoimprint lithography technique. A transparent master stamp with repeated pillars (150 nm diameter at 300 nm pitch) was fabricated by using laser interference lithography and the subsequent dry-etching process. After nanoimprint lithography and the following gold (Au) lift-off process, the corresponding gold dots (20 nm height) were generated. A thin chromium layer (Cr, 5 nm) was then deposited and subjected to the aqua regia solution, which dissolved only Au dots. By using a selective wet etching recipe between gold (Au) and chromium (Cr) materials, a Cr layer with holes was reliably generated, which was used as an etching mask to transfer holes into the silicon substrate in the subsequent dry-etching process. Hole patterns with a diameter of 146 nm were inversely replicated faithfully from the master stamp with the corresponding pillars without a notable feature size distortion

Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography

International Nuclear Information System (INIS)

Song, Jingfeng; Lu, Haidong; Gruverman, Alexei; Ducharme, Stephen; Li, Shumin; Tan, Li

2016-01-01

Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics. (paper)

Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography.

Science.gov (United States)

Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

2016-01-08

Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

International Nuclear Information System (INIS)

Brose, S.; Danylyuk, S.; Juschkin, L.; Dittberner, C.; Bergmann, K.; Moers, J.; Panaitov, G.; Trellenkamp, St.; Loosen, P.; Grützmacher, D.

2012-01-01

Lithography and patterning on a nanometre scale with extreme ultraviolet (EUV) and soft X-ray radiation allow creation of high resolution, high density patterns independent of a substrate type. To realize the full potential of this method, especially for EUV proximity printing and interference lithography, a reliable technology for manufacturing of the transmission masks and gratings should be available. In this paper we present a development of broadband amplitude transmission masks and gratings for extreme ultraviolet and soft X-ray lithography based on free-standing niobium membranes. In comparison with a standard silicon nitride based technology the transmission masks demonstrate high contrast not only for in-band EUV (13.5 nm) radiation but also for wavelengths below Si L-absorption edge (12.4 nm). The masks and filters with free standing areas up to 1000 × 1000 μm 2 and 100 nm to 300 nm membrane thicknesses are shown. Electron beam structuring of an absorber layer with dense line and dot patterns with sub-50 nm structures is demonstrated. Diffractive and filtering properties of obtained structures are examined with EUV radiation from a gas discharge plasma source. - Highlights: ► Broadband transmission masks for EUV proximity and interference lithography. ► Technology for free standing niobium membranes with areas up to 1 mm 2 . ► High density patterns with periods of 100 nm and structure sizes below 40 nm. ► Measured diffraction efficiency at 11 nm is in agreement with the theory. ► Produced masks can be effectively used with wavelengths between 6 nm and 17 nm.

Fast thermal nanoimprint lithography by a stamp with integrated heater

DEFF Research Database (Denmark)

Tormen, Massimo; Malureanu, Radu; Pedersen, Rasmus Haugstrup

2008-01-01

We propose fast nanoimprinting lithography (NIL) process based on the use of stamps with integrated heater. The latter consists of heavily ion implantation n-type doped silicon layer buried below the microstructured surface of the stamp. The stamp is heated by Joule effect, by 50 μs 25 Hz...

Linear Fresnel zone plate based two-state alignment system for 0.25 micron x-ray lithography

International Nuclear Information System (INIS)

Chen, G.

1993-01-01

X-ray lithography has proven to be a cost effective and promising technique for fabricating Integrated Circuits (ICs) with minimum feature sizes of less than 0.25 μm. Since IC fabrication is a multilevel process, to preserve the functionality of devices, circuit patterns printed at each lithography level must match existing patterns on the wafer with an accuracy of less than 1/3 ∼ 1/5 of the minimum feature size. An alignment system is used to position the mask relative to the wafer so that mask circuit patterns can be printed on the wafer at the designed position. As the minimum printed feature size shrinks, the overlay requirements of a lithography tool become more stringent. A stepper for 0.25 μm feature device fabrication requires an overlay accuracy of 0.075 μm, of which only 0.05 μm (mean + 3σ) is allocated to its alignment system. This thesis presents the development of a linear Fresnel zone late based two-state alignment (TSA) method for a 0.25 μm x-ray lithography tool. The authors first analyze the overlay requirement in a lithography process and the error allocation to the alignment system for a 0.25 μ feature x-ray lithography tool. They then describe the principle of the two-state alignment, its computer simulation and the optimal alignment mark design. They carried out an optical bench test for the one-axes alignment setup and experimentally evaluated the performance of the system. They developed a three-axes TSA system and integrated the system with the ES-3 x-ray beamline to construct the CXrL aligner, an experimental x-ray exposure system in CXrL. They measured the alignment accuracy of the exposure system to be better than 0.035 μm (3σ) on both metal and dielectric alignment mark substrates. They also studied the effect of processing coatings on the alignment signal with different wafer mark substrates. They successfully printed the 0.5 μm gate level patterns for the first NMOS test chip at CXrL

Implementation and benefits of advanced process control for lithography CD and overlay

Science.gov (United States)

Zavyalova, Lena; Fu, Chong-Cheng; Seligman, Gary S.; Tapp, Perry A.; Pol, Victor

2003-05-01

Due to the rapidly reduced imaging process windows and increasingly stingent device overlay requirements, sub-130 nm lithography processes are more severely impacted than ever by systamic fault. Limits on critical dimensions (CD) and overlay capability further challenge the operational effectiveness of a mix-and-match environment using multiple lithography tools, as such mode additionally consumes the available error budgets. Therefore, a focus on advanced process control (APC) methodologies is key to gaining control in the lithographic modules for critical device levels, which in turn translates to accelerated yield learning, achieving time-to-market lead, and ultimately a higher return on investment. This paper describes the implementation and unique challenges of a closed-loop CD and overlay control solution in high voume manufacturing of leading edge devices. A particular emphasis has been placed on developing a flexible APC application capable of managing a wide range of control aspects such as process and tool drifts, single and multiple lot excursions, referential overlay control, 'special lot' handling, advanced model hierarchy, and automatic model seeding. Specific integration cases, including the multiple-reticle complementary phase shift lithography process, are discussed. A continuous improvement in the overlay and CD Cpk performance as well as the rework rate has been observed through the implementation of this system, and the results are studied.

Preparing patterned carbonaceous nanostructures directly by overexposure of PMMA using electron-beam lithography

Energy Technology Data Exchange (ETDEWEB)

Duan Huigao; Zhao Jianguo; Zhang Yongzhe; Xie Erqing [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Han Li [Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China)], E-mail: duanhg@gmail.com, E-mail: xieeq@lzu.edu.cn

2009-04-01

The overexposure process of poly(methyl methacrylate) (PMMA) was studied in detail using electron-beam lithography. It was found that PMMA films could be directly patterned without development due to the electron-beam-induced collapse of PMMA macromolecular chains. By analyzing the evolution of surface morphologies and compositions of the overexposed PMMA films, it was also found that the transformation of PMMA from positive to negative resist was a carbonization process, so patterned carbonaceous nanostructures could be prepared directly by overexposure of PMMA using electron-beam lithography. This simple one-step process for directly obtaining patterned carbonaceous nanostructures has promising potential application as a tool to make masks and templates, nanoelectrodes, and building blocks for MEMS and nanophotonic devices.

Programmable lithography engine (ProLE) grid-type supercomputer and its applications

Science.gov (United States)

Petersen, John S.; Maslow, Mark J.; Gerold, David J.; Greenway, Robert T.

2003-06-01

There are many variables that can affect lithographic dependent device yield. Because of this, it is not enough to make optical proximity corrections (OPC) based on the mask type, wavelength, lens, illumination-type and coherence. Resist chemistry and physics along with substrate, exposure, and all post-exposure processing must be considered too. Only a holistic approach to finding imaging solutions will accelerate yield and maximize performance. Since experiments are too costly in both time and money, accomplishing this takes massive amounts of accurate simulation capability. Our solution is to create a workbench that has a set of advanced user applications that utilize best-in-class simulator engines for solving litho-related DFM problems using distributive computing. Our product, ProLE (Programmable Lithography Engine), is an integrated system that combines Petersen Advanced Lithography Inc."s (PAL"s) proprietary applications and cluster management software wrapped around commercial software engines, along with optional commercial hardware and software. It uses the most rigorous lithography simulation engines to solve deep sub-wavelength imaging problems accurately and at speeds that are several orders of magnitude faster than current methods. Specifically, ProLE uses full vector thin-mask aerial image models or when needed, full across source 3D electromagnetic field simulation to make accurate aerial image predictions along with calibrated resist models;. The ProLE workstation from Petersen Advanced Lithography, Inc., is the first commercial product that makes it possible to do these intensive calculations at a fraction of a time previously available thus significantly reducing time to market for advance technology devices. In this work, ProLE is introduced, through model comparison to show why vector imaging and rigorous resist models work better than other less rigorous models, then some applications of that use our distributive computing solution are shown

Prototyping Practice

DEFF Research Database (Denmark)

Ramsgaard Thomsen, Mette; Tamke, Martin

2015-01-01

This paper examines the role of the prototyping in digital architecture. During the past decade, a new research field has emerged exploring the digital technology’s impact on the way we think, design and build our environment. In this practice the prototype, the pavilion, installation or demonstr......This paper examines the role of the prototyping in digital architecture. During the past decade, a new research field has emerged exploring the digital technology’s impact on the way we think, design and build our environment. In this practice the prototype, the pavilion, installation...

Design and fabrication of spectrally selective emitter for thermophotovoltaic system by using nano-imprint lithography

Science.gov (United States)

Kim, Jong-Moo; Park, Keum-Hwan; Kim, Da-Som; Hwang, Bo-yeon; Kim, Sun-Kyung; Chae, Hee-Man; Ju, Byeong-Kwon; Kim, Young-Seok

2018-01-01

Thermophotovoltaic (TPV) systems have attracted attention as promising power generation systems that can directly convert the radiant energy produced by the combustion of fuel into electrical energy. However, there is a fundamental limit of their conversion efficiency due to the broadband distribution of the radiant spectrum. To overcome this problem, several spectrally selective thermal emitter technologies have been investigated, including the fabrication of photonic crystal (PhC) structures. In this paper, we present some design rules based on finite-a difference time-domain (FDTD) simulation results for tungsten (W) PhC emitter. The W 2D PhC was fabricated by a simple nano-imprint lithography (NIL) process, and inductive coupled plasma reactive ion etching (ICP-RIE) with an isotropic etching process, the benefits and parameters of which are presented. The fabricated W PhC emitter showed spectrally selective emission near the infrared wavelength range, and the optical properties varied depending on the size of the nano-patterns. The measured results of the fabricated prototype structure correspond well to the simulated values. Finally, compared with the performance of a flat W emitter, the total thermal emitter efficiency was almost 3.25 times better with the 2D W PhC structure.

Surface enhanced thermo lithography

KAUST Repository

Coluccio, Maria Laura

2017-01-13

We used electroless deposition to fabricate clusters of silver nanoparticles (NPs) on a silicon substrate. These clusters are plasmonics devices that induce giant electromagnetic (EM) field increments. When those EM field are absorbed by the metal NPs clusters generate, in turn, severe temperature increases. Here, we used the laser radiation of a conventional Raman set-up to transfer geometrical patterns from a template of metal NPs clusters into a layer of thermo sensitive Polyphthalaldehyde (PPA) polymer. Temperature profile on the devices depends on specific arrangements of silver nanoparticles. In plane temperature variations may be controlled with (i) high nano-meter spatial precision and (ii) single Kelvin temperature resolution on varying the shape, size and spacing of metal nanostructures. This scheme can be used to generate strongly localized heat amplifications for applications in nanotechnology, surface enhanced thermo-lithography (SETL), biology and medicine (for space resolved cell ablation and treatment), nano-chemistry.

Surface enhanced thermo lithography

KAUST Repository

Coluccio, Maria Laura; Alabastri, Alessandro; Bonanni, Simon; Majewska, Roksana; Dattoli, Elisabetta; Barberio, Marianna; Candeloro, Patrizio; Perozziello, Gerardo; Mollace, Vincenzo; Di Fabrizio, Enzo M.; Gentile, Francesco

2017-01-01

We used electroless deposition to fabricate clusters of silver nanoparticles (NPs) on a silicon substrate. These clusters are plasmonics devices that induce giant electromagnetic (EM) field increments. When those EM field are absorbed by the metal NPs clusters generate, in turn, severe temperature increases. Here, we used the laser radiation of a conventional Raman set-up to transfer geometrical patterns from a template of metal NPs clusters into a layer of thermo sensitive Polyphthalaldehyde (PPA) polymer. Temperature profile on the devices depends on specific arrangements of silver nanoparticles. In plane temperature variations may be controlled with (i) high nano-meter spatial precision and (ii) single Kelvin temperature resolution on varying the shape, size and spacing of metal nanostructures. This scheme can be used to generate strongly localized heat amplifications for applications in nanotechnology, surface enhanced thermo-lithography (SETL), biology and medicine (for space resolved cell ablation and treatment), nano-chemistry.

Driving imaging and overlay performance to the limits with advanced lithography optimization

Science.gov (United States)

Mulkens, Jan; Finders, Jo; van der Laan, Hans; Hinnen, Paul; Kubis, Michael; Beems, Marcel

2012-03-01

Immersion lithography is being extended to 22-nm and even below. Next to generic scanner system improvements, application specific solutions are needed to follow the requirements for CD control and overlay. Starting from the performance budgets, this paper discusses how to improve (in volume manufacturing environment) CDU towards 1-nm and overlay towards 3-nm. The improvements are based on deploying the actuator capabilities of the immersion scanner. The latest generation immersion scanners have extended the correction capabilities for overlay and imaging, offering freeform adjustments of lens, illuminator and wafer grid. In order to determine the needed adjustments the recipe generation per user application is based on a combination wafer metrology data and computational lithography methods. For overlay, focus and CD metrology we use an angle resolved optical scatterometer.

Fabrication of biomimetic dry-adhesion structures through nanosphere lithography

Science.gov (United States)

Kuo, P. C.; Chang, N. W.; Suen, Y.; Yang, S. Y.

2018-03-01

Components with surface nanostructures suitable for biomimetic dry adhesion have a great potential in applications such as gecko tape, climbing robots, and skin patches. In this study, a nanosphere lithography technique with self-assembly nanospheres was developed to achieve effective and efficient fabrication of dry-adhesion structures. Self-assembled monolayer nanospheres with high regularity were obtained through tilted dip-coating. Reactive-ion etching of the self-assembled nanospheres was used to fabricate nanostructures of different shapes and aspect ratios by varying the etching time. Thereafter, nickel molds with inverse nanostructures were replicated using the electroforming process. Polydimethylsiloxane (PDMS) nanostructures were fabricated through a gas-assisted hot-embossing method. The pulling test was performed to measure the shear adhesion on the glass substrate of a sample, and the static contact angle was measured to verify the hydrophobic property of the structure. The enhancement of the structure indicates that the adhesion force increased from 1.2 to 4.05 N/cm2 and the contact angle increased from 118.6° to 135.2°. This columnar structure can effectively enhance the adhesion ability of PDMS, demonstrating the potential of using nanosphere lithography for the fabrication of adhesive structures.

Fabrication of biopolymer cantilevers using nanoimprint lithography

DEFF Research Database (Denmark)

Keller, Stephan Sylvest; Feidenhans'l, Nikolaj Agentoft; Fisker-Bødker, Nis

2011-01-01

The biodegradable polymer poly(l-lactide) (PLLA) was introduced for the fabrication of micromechanical devices. For this purpose, thin biopolymer films with thickness around 10 μm were spin-coated on silicon substrates. Patterning of microcantilevers is achieved by nanoimprint lithography. A major...... challenge was the high adhesion between PLLA and silicon stamp. Optimized stamp fabrication and the deposition of a 125 nm thick fluorocarbon anti-stiction coating on the PLLA allowed the fabrication of biopolymer cantilevers. Resonance frequency measurements were used to estimate the Young’s modulus...

Photoinhibition superresolution lithography

Science.gov (United States)

Forman, Darren Lawrence

While the prospect of nanoscale manufacturing has generated tremendous excitement, arbitrary patterning at nanometer length scales cannot be brought about with current photolithography---the technology that for decades has driven electronics miniaturization and enabled mass production of digital logic, memory, MEMS and flat-panel displays. This is due to the relatively long wavelength of light and diffraction, which imposes a physical not technological limit on the resolution of a far-field optical pattern. Photoinhibited superresolution (PInSR) lithography is a new scheme designed to beat the diffraction limit through two-color confinement of photopolymerization and, via efficient single-photon absorption kinetics, also be high-throughput capable. This thesis describes development of an integrated optical and materials system for investigating spatiotemporal dynamics of photoinhibited superresolution lithography, with a demonstrated 3x superresolution beyond the diffraction limit. The two-color response, arising from orthogonal photogeneration of species that participate in competing reactions, is shown to be highly complex. This is both a direct and indirect consequence of mobility. Interesting trade-offs arise: thin-film resins (necessitated by single-photon absorption kinetics) require high viscosity for film stability, but the photoinhibition effect is suppressed in viscous resins. Despite this apparent suppression, which can be overcome with high excitation of the photoinhibition system, the low mobility afforded by viscous materials is beneficial for confinement of active species. Diffusion-induced blurring of patterned photoinhibition is problematic in a resin with viscosity = 1,000 cP, and overcome in a resin with viscosity eta = 500,000 cP. Superresolution of factor 3x beyond the diffraction limit is demonstrated at 0.2 NA, with additional results indicating superresolution ability at 1.2 NA. Investigating the effect of diminished photoinhibition efficacy

Objective for EUV microscopy, EUV lithography, and x-ray imaging

Science.gov (United States)

Bitter, Manfred; Hill, Kenneth W.; Efthimion, Philip

2016-05-03

Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.

A new UV-curing elastomeric substrate for rapid prototyping of microfluidic devices

Science.gov (United States)

Alvankarian, Jafar; Yeop Majlis, Burhanuddin

2012-03-01

Rapid prototyping in the design cycle of new microfluidic devices is very important for shortening time-to-market. Researchers are facing the challenge to explore new and suitable substrates with simple and efficient microfabrication techniques. In this paper, we introduce and characterize a UV-curing elastomeric polyurethane methacrylate (PUMA) for rapid prototyping of microfluidic devices. The swelling and solubility of PUMA in different chemicals is determined. Time-dependent measurements of water contact angle show that the native PUMA is hydrophilic without surface treatment. The current monitoring method is used for measurement of the electroosmotic flow mobility in the microchannels made from PUMA. The optical, physical, thermal and mechanical properties of PUMA are evaluated. The UV-lithography and molding process is used for making micropillars and deep channel microfluidic structures integrated to the supporting base layer. Spin coating is characterized for producing different layer thicknesses of PUMA resin. A device is fabricated and tested for examining the strength of different bonding techniques such as conformal, corona treating and semi-curing of two PUMA layers in microfluidic application and the results show that the bonding strengths are comparable to that of PDMS. We also report fabrication and testing of a three-layer multi inlet/outlet microfluidic device including a very effective fluidic interconnect for application demonstration of PUMA as a promising new substrate. A simple micro-device is developed and employed for observing the pressure deflection of membrane made from PUMA as a very effective elastomeric valve in microfluidic devices.

High throughput, high resolution enzymatic lithography process: effect of crystallite size, moisture, and enzyme concentration.

Science.gov (United States)

Mao, Zhantong; Ganesh, Manoj; Bucaro, Michael; Smolianski, Igor; Gross, Richard A; Lyons, Alan M

2014-12-08

By bringing enzymes into contact with predefined regions of a surface, a polymer film can be selectively degraded to form desired patterns that find a variety of applications in biotechnology and electronics. This so-called "enzymatic lithography" is an environmentally friendly process as it does not require actinic radiation or synthetic chemicals to develop the patterns. A significant challenge to using enzymatic lithography has been the need to restrict the mobility of the enzyme in order to maintain control of feature sizes. Previous approaches have resulted in low throughput and were limited to polymer films only a few nanometers thick. In this paper, we demonstrate an enzymatic lithography system based on Candida antartica lipase B (CALB) and poly(ε-caprolactone) (PCL) that can resolve fine-scale features, (<1 μm across) in thick (0.1-2.0 μm) polymer films. A Polymer Pen Lithography (PPL) tool was developed to deposit an aqueous solution of CALB onto a spin-cast PCL film. Immobilization of the enzyme on the polymer surface was monitored using fluorescence microscopy by labeling CALB with FITC. The crystallite size in the PCL films was systematically varied; small crystallites resulted in significantly faster etch rates (20 nm/min) and the ability to resolve smaller features (as fine as 1 μm). The effect of printing conditions and relative humidity during incubation is also presented. Patterns formed in the PCL film were transferred to an underlying copper foil demonstrating a "Green" approach to the fabrication of printed circuit boards.

Lithography-based fabrication of nanopore arrays in freestanding SiN and graphene membranes

Science.gov (United States)

Verschueren, Daniel V.; Yang, Wayne; Dekker, Cees

2018-04-01

We report a simple and scalable technique for the fabrication of nanopore arrays on freestanding SiN and graphene membranes based on electron-beam lithography and reactive ion etching. By controlling the dose of the single-shot electron-beam exposure, circular nanopores of any size down to 16 nm in diameter can be fabricated in both materials at high accuracy and precision. We demonstrate the sensing capabilities of these nanopores by translocating dsDNA through pores fabricated using this method, and find signal-to-noise characteristics on par with transmission-electron-microscope-drilled nanopores. This versatile lithography-based approach allows for the high-throughput manufacturing of nanopores and can in principle be used on any substrate, in particular membranes made out of transferable two-dimensional materials.

Nanomanipulation of 2 inch wafer fabrication of vertically aligned carbon nanotube arrays by nanoimprint lithography

DEFF Research Database (Denmark)

Bu, Ian Y. Y.; Eichhorn, Volkmar; Carlson, Kenneth

2011-01-01

Carbon nanotube (CNT) arrays are typically defined by electron beam lithography (EBL), and hence limited to small areas due to the low throughput. To obtain wafer‐scale fabrication we propose large area thermal nanoimprint lithography (NIL). A 2‐inch stamp master is defined using EBL for subsequent......, efficient production of wafer‐scale/larger arrays of CNTs has been achieved. The CNTs have been deposited by wafer‐scale plasma enhanced chemical vapour deposition (PECVD) of C2H2/NH3. Substrates containing such nanotubes have been used to automate nanorobotic manipulation sequences of individual CNTs...

Fabrication of submicron structures in nanoparticle/polymer composite by holographic lithography and reactive ion etching

Science.gov (United States)

Zhang, A. Ping; He, Sailing; Kim, Kyoung Tae; Yoon, Yong-Kyu; Burzynski, Ryszard; Samoc, Marek; Prasad, Paras N.

2008-11-01

We report on the fabrication of nanoparticle/polymer submicron structures by combining holographic lithography and reactive ion etching. Silica nanoparticles are uniformly dispersed in a (SU8) polymer matrix at a high concentration, and in situ polymerization (cross-linking) is used to form a nanoparticle/polymer composite. Another photosensitive SU8 layer cast upon the nanoparticle/SU8 composite layer is structured through holographic lithography, whose pattern is finally transferred to the nanoparticle/SU8 layer by the reactive ion etching process. Honeycomb structures in a submicron scale are experimentally realized in the nanoparticle/SU8 composite.

Quadratic nonlinear optics to assess the morphology of riboflavin doped chitosan for eco-friendly lithography

Science.gov (United States)

Ray, Cédric; Caillau, Mathieu; Jonin, Christian; Benichou, Emmanuel; Moulin, Christophe; Salmon, Estelle; Maldonado, Melissa E.; Gomes, Anderson S. L.; Monnier, Virginie; Laurenceau, Emmanuelle; Leclercq, Jean-Louis; Chevolot, Yann; Delair, Thierry; Brevet, Pierre-François

2018-06-01

We report the use of the Second Harmonic Generation response from a riboflavin doped chitosan film as a characterization method of the film morphology. This film is of particular interest in the development of new and bio-sourced material for eco-friendly UV lithography. The method allows us to determine how riboflavin is distributed as a function of film depth in the sample. This possibility is of importance in order to have a better understanding of the riboflavin influence in chitosan films during the lithography process. On the contrary, linear optical techniques provide no information beyond the mere confirmation of the riboflavin presence.

Uniformity of LED light illumination in application to direct imaging lithography

Science.gov (United States)

Huang, Ting-Ming; Chang, Shenq-Tsong; Tsay, Ho-Lin; Hsu, Ming-Ying; Chen, Fong-Zhi

2016-09-01

Direct imaging has widely applied in lithography for a long time because of its simplicity and easy-maintenance. Although this method has limitation of lithography resolution, it is still adopted in industries. Uniformity of UV irradiance for a designed area is an important requirement. While mercury lamps were used as the light source in the early stage, LEDs have drawn a lot of attention for consideration from several aspects. Although LED has better and better performance, arrays of LEDs are required to obtain desired irradiance because of limitation of brightness for a single LED. Several effects are considered that affect the uniformity of UV irradiance such as alignment of optics, temperature of each LED, performance of each LED due to production uniformity, and pointing of LED module. Effects of these factors are considered to study the uniformity of LED Light Illumination. Numerical analysis is performed by assuming a serious of control factors to have a better understanding of each factor.

Fabrication of Monolithic Bridge Structures by Vacuum-Assisted Capillary-Force Lithography

KAUST Repository

Kwak, Rhokyun

2009-04-06

Monolithic bridge structures were fabricated by using capillary-force lithography (CFL), which was developed for patterning polymers over a large area by combining essential features of nanoimprint lithography and capillarity. A patterned soft mold was placed on a spin-coated UV-curable resin on a substrate. The polymer then moved into the cavity of the mold by capillary action and then solidified after exposure to UV radiation. The uncured resin was forced to migrate into the cavity of a micropatterned PDMS mold by capillarity, and then exposed to UV radiation under a high-energy mercury lamp with intensity. A rotary pump was then turned on, decreasing the air pressure in the chamber. SEM images were taken with a high-resolution SEM at an acceleration voltage greater than 15 kV. It was observed that when the air pressure was rapidly reduced to a low vacuum, the top layer moved into the nanochannels with a meniscus at the interface between the nanoscale PUA and the base structure.

Ion projection lithography: November 2000 status and sub-70-nm prospects

Science.gov (United States)

Kaesmaier, Rainer; Wolter, Andreas; Loeschner, Hans; Schunck, Stefan

2000-10-01

Among all next generation lithography (NGL) options Ion Projection Lithography (IPL) offers the smallest (particle) wavelength of 5x10- 5nm (l00keV Helium ions). Thus, 4x reduction ion-optics has diffraction limits IOS) has been realized and assembled. In parallel to the PDT-IOS effort, at Leica Jena a test bench for a vertical vacuum 300mm-wafer stage has been realized. Operation of magnetic bearing supported stage movement has already been demonstrated. As ASML vacuum compatible optical wafer alignment system, with 3nm(3(sigma) ) precision demonstrated in air, has been integrated to this wafer test bench system recently. Parallel to the IPL tool development, Infineon Technologies Mask House and the Institute for Microelectronics Stuttgart are intensively working on the development of IPL stencil masks with success in producing 150mm and 200mm stencil masks as reported elsewhere. This paper is focused on information about the status of the PDT-IOS tool.

New self-assembly strategies for next generation lithography

Science.gov (United States)

Schwartz, Evan L.; Bosworth, Joan K.; Paik, Marvin Y.; Ober, Christopher K.

2010-04-01

Future demands of the semiconductor industry call for robust patterning strategies for critical dimensions below twenty nanometers. The self assembly of block copolymers stands out as a promising, potentially lower cost alternative to other technologies such as e-beam or nanoimprint lithography. One approach is to use block copolymers that can be lithographically patterned by incorporating a negative-tone photoresist as the majority (matrix) phase of the block copolymer, paired with photoacid generator and a crosslinker moiety. In this system, poly(α-methylstyrene-block-hydroxystyrene)(PαMS-b-PHOST), the block copolymer is spin-coated as a thin film, processed to a desired microdomain orientation with long-range order, and then photopatterned. Therefore, selfassembly of the block copolymer only occurs in select areas due to the crosslinking of the matrix phase, and the minority phase polymer can be removed to produce a nanoporous template. Using bulk TEM analysis, we demonstrate how the critical dimension of this block copolymer is shown to scale with polymer molecular weight using a simple power law relation. Enthalpic interactions such as hydrogen bonding are used to blend inorganic additives in order to enhance the etch resistance of the PHOST block. We demonstrate how lithographically patternable block copolymers might fit in to future processing strategies to produce etch-resistant self-assembled features at length scales impossible with conventional lithography.

Integrating nanosphere lithography in device fabrication

Science.gov (United States)

Laurvick, Tod V.; Coutu, Ronald A.; Lake, Robert A.

2016-03-01

This paper discusses the integration of nanosphere lithography (NSL) with other fabrication techniques, allowing for nano-scaled features to be realized within larger microelectromechanical system (MEMS) based devices. Nanosphere self-patterning methods have been researched for over three decades, but typically not for use as a lithography process. Only recently has progress been made towards integrating many of the best practices from these publications and determining a process that yields large areas of coverage, with repeatability and enabled a process for precise placement of nanospheres relative to other features. Discussed are two of the more common self-patterning methods used in NSL (i.e. spin-coating and dip coating) as well as a more recently conceived variation of dip coating. Recent work has suggested the repeatability of any method depends on a number of variables, so to better understand how these variables affect the process a series of test vessels were developed and fabricated. Commercially available 3-D printing technology was used to incrementally alter the test vessels allowing for each variable to be investigated individually. With these deposition vessels, NSL can now be used in conjunction with other fabrication steps to integrate features otherwise unattainable through current methods, within the overall fabrication process of larger MEMS devices. Patterned regions in 1800 series photoresist with a thickness of ~700nm are used to capture regions of self-assembled nanospheres. These regions are roughly 2-5 microns in width, and are able to control the placement of 500nm polystyrene spheres by controlling where monolayer self-assembly occurs. The resulting combination of photoresist and nanospheres can then be used with traditional deposition or etch methods to utilize these fine scale features in the overall design.

Masks for high aspect ratio x-ray lithography

International Nuclear Information System (INIS)

Malek, C.K.; Jackson, K.H.; Bonivert, W.D.; Hruby, J.

1997-01-01

Fabrication of very high aspect ratio microstructures, as well as ultra-high precision manufacturing is of increasing interest in a multitude of applications. Fields as diverse as micromechanics, robotics, integrated optics, and sensors benefit from this technology. The scale-length of this spatial regime is between what can be achieved using classical machine tool operations and that which is used in microelectronics. This requires new manufacturing techniques, such as the LIGA process, which combines x-ray lithography, electroforming, and plastic molding

Elevated temperature forming method and preheater apparatus

Science.gov (United States)

Krajewski, Paul E; Hammar, Richard Harry; Singh, Jugraj; Cedar, Dennis; Friedman, Peter A; Luo, Yingbing

2013-06-11

An elevated temperature forming system in which a sheet metal workpiece is provided in a first stage position of a multi-stage pre-heater, is heated to a first stage temperature lower than a desired pre-heat temperature, is moved to a final stage position where it is heated to a desired final stage temperature, is transferred to a forming press, and is formed by the forming press. The preheater includes upper and lower platens that transfer heat into workpieces disposed between the platens. A shim spaces the upper platen from the lower platen by a distance greater than a thickness of the workpieces to be heated by the platens and less than a distance at which the upper platen would require an undesirably high input of energy to effectively heat the workpiece without being pressed into contact with the workpiece.

Enhancing experience prototyping by the help of mixed-fidelity prototypes

OpenAIRE

Yasar, Ansar-Ul-Haque

2007-01-01

In this research review I undertook the problem related to the usage of a new concept known as the Mixed- Fidelity Prototype which is a mixture of its predecessors Low- and High- Fidelity Prototypes in Experience Prototyping. Experience Prototyping is a good way to explore, communicate and interact with the designs we develop like experiencing cycling on the ice, although the mood, snow conditions, bicycle type and many other factors really matter and tend to change with time. Experience Prot...

REBL: design progress toward 16 nm half-pitch maskless projection electron beam lithography

Science.gov (United States)

McCord, Mark A.; Petric, Paul; Ummethala, Upendra; Carroll, Allen; Kojima, Shinichi; Grella, Luca; Shriyan, Sameet; Rettner, Charles T.; Bevis, Chris F.

2012-03-01

REBL (Reflective Electron Beam Lithography) is a novel concept for high speed maskless projection electron beam lithography. Originally targeting 45 nm HP (half pitch) under a DARPA funded contract, we are now working on optimizing the optics and architecture for the commercial silicon integrated circuit fabrication market at the equivalent of 16 nm HP. The shift to smaller features requires innovation in most major subsystems of the tool, including optics, stage, and metrology. We also require better simulation and understanding of the exposure process. In order to meet blur requirements for 16 nm lithography, we are both shrinking the pixel size and reducing the beam current. Throughput will be maintained by increasing the number of columns as well as other design optimizations. In consequence, the maximum stage speed required to meet wafer throughput targets at 16 nm will be much less than originally planned for at 45 nm. As a result, we are changing the stage architecture from a rotary design to a linear design that can still meet the throughput requirements but with more conventional technology that entails less technical risk. The linear concept also allows for simplifications in the datapath, primarily from being able to reuse pattern data across dies and columns. Finally, we are now able to demonstrate working dynamic pattern generator (DPG) chips, CMOS chips with microfabricated lenslets on top to prevent crosstalk between pixels.

Sequential infiltration synthesis for advanced lithography

Energy Technology Data Exchange (ETDEWEB)

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih; Peng, Qing

2017-10-10

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Recent advances in X-ray lithography

International Nuclear Information System (INIS)

Cerrina, F.

1992-01-01

We report some significant developments in the area of X-ray technology, in the area of the modeling of image formation, in distortion control and in mask replication. Early simple models have been replaced by complete optical calculations based on physical optics and including all relevant factors. These models provide good agreement with the available experimental results. In the area of mask distortions, the use of finite element analysis models has clarified the roles played by the various sources of stress and explained in greater detail the origin of temperature changes. These progress have paved the way to the optimization of the exposure system and to the achievement of the large exposure latitude potential of X-ray lithography. (author)

Fabrication of a negative PMMA master mold for soft-lithography by MeV ion beam lithography

Science.gov (United States)

Puttaraksa, Nitipon; Unai, Somrit; Rhodes, Michael W.; Singkarat, Kanda; Whitlow, Harry J.; Singkarat, Somsorn

2012-02-01

In this study, poly(methyl methacrylate) (PMMA) was investigated as a negative resist by irradiation with a high-fluence 2 MeV proton beam. The beam from a 1.7 MV Tandetron accelerator at the Plasma and Beam Physics Research Facility (PBP) of Chiang Mai University is shaped by a pair of computer-controlled L-shaped apertures which are used to expose rectangular pattern elements with 1-1000 μm side length. Repeated exposure of rectangular pattern elements allows a complex pattern to be built up. After subsequent development, the negative PMMA microstructure was used as a master mold for casting poly(dimethylsiloxane) (PDMS) following a standard soft-lithography process. The PDMS chip fabricated by this technique was demonstrated to be a microfluidic device.

Fabrication of a negative PMMA master mold for soft-lithography by MeV ion beam lithography

International Nuclear Information System (INIS)

Puttaraksa, Nitipon; Unai, Somrit; Rhodes, Michael W.; Singkarat, Kanda; Whitlow, Harry J.; Singkarat, Somsorn

2012-01-01

In this study, poly(methyl methacrylate) (PMMA) was investigated as a negative resist by irradiation with a high-fluence 2 MeV proton beam. The beam from a 1.7 MV Tandetron accelerator at the Plasma and Beam Physics Research Facility (PBP) of Chiang Mai University is shaped by a pair of computer-controlled L-shaped apertures which are used to expose rectangular pattern elements with 1–1000 μm side length. Repeated exposure of rectangular pattern elements allows a complex pattern to be built up. After subsequent development, the negative PMMA microstructure was used as a master mold for casting poly(dimethylsiloxane) (PDMS) following a standard soft-lithography process. The PDMS chip fabricated by this technique was demonstrated to be a microfluidic device.

Multi-Repeated Projection Lithography for High-Precision Linear Scale Based on Average Homogenization Effect

Directory of Open Access Journals (Sweden)

Dongxu Ren

2016-04-01

Full Text Available A multi-repeated photolithography method for manufacturing an incremental linear scale using projection lithography is presented. The method is based on the average homogenization effect that periodically superposes the light intensity of different locations of pitches in the mask to make a consistent energy distribution at a specific wavelength, from which the accuracy of a linear scale can be improved precisely using the average pitch with different step distances. The method’s theoretical error is within 0.01 µm for a periodic mask with a 2-µm sine-wave error. The intensity error models in the focal plane include the rectangular grating error on the mask, static positioning error, and lithography lens focal plane alignment error, which affect pitch uniformity less than in the common linear scale projection lithography splicing process. It was analyzed and confirmed that increasing the repeat exposure number of a single stripe could improve accuracy, as could adjusting the exposure spacing to achieve a set proportion of black and white stripes. According to the experimental results, the effectiveness of the multi-repeated photolithography method is confirmed to easily realize a pitch accuracy of 43 nm in any 10 locations of 1 m, and the whole length accuracy of the linear scale is less than 1 µm/m.

Deep lithography with protons Modelling and predicting the performances of a novel fabrication technology for micro-optical components

CERN Document Server

Volckaerts, B; Veretennicoff, I; Thienpont, H

2002-01-01

We developed a simulation package that predicts 3D-dose distributions in proton irradiated poly(methylmetacrylate) samples considering primary energy transfer and scattering phenomena. In this paper, we apply this code to predict the surface flatness and maximum thickness of micro-optical and mechanical structures fabricated with deep lithography with protons (DLP). We compare these simulation results with experimental data and highlight the fundamental differences between DLP and deep X-ray lithography.

Integrated lithography to prepare periodic arrays of nano-objects

International Nuclear Information System (INIS)

Sipos, Áron; Szalai, Anikó; Csete, Mária

2013-01-01

We present an integrated lithography method to prepare versatile nano-objects with variable shape and nano-scaled substructure, in wavelength-scaled periodic arrays with arbitrary symmetry. The idea is to illuminate colloid sphere monolayers by polarized beams possessing periodic lateral intensity modulations. Finite element method was applied to determine the effects of the wavelength, polarization and angle of incidence of the incoming beam, and to predict the characteristics of nano-objects, which can be fabricated on thin metal layer covered substrates due to the near-field enhancement under silica colloid spheres. The inter-object distance is controlled by varying the relative orientation of the periodic intensity modulation with respect to the silica colloid sphere monolayer. It is shown that illuminating silica colloid sphere monolayers by two interfering beams, linear patterns made of elliptical holes appear in case of linear polarization, while circularly polarized beams result in co-existent rounded objects, as more circular nano-holes and nano-crescents. The size of the nano-objects and their sub-structure is determined by the spheres diameter and by the wavelength. We present various complex plasmonic patterns made of versatile nano-objects that can be uniquely fabricated applying the inherent symmetry breaking possibilities in the integrated lithography method.

Large area nanoimprint by substrate conformal imprint lithography (SCIL)

Science.gov (United States)

Verschuuren, Marc A.; Megens, Mischa; Ni, Yongfeng; van Sprang, Hans; Polman, Albert

2017-06-01

Releasing the potential of advanced material properties by controlled structuring materials on sub-100-nm length scales for applications such as integrated circuits, nano-photonics, (bio-)sensors, lasers, optical security, etc. requires new technology to fabricate nano-patterns on large areas (from cm2 to 200 mm up to display sizes) in a cost-effective manner. Conventional high-end optical lithography such as stepper/scanners is highly capital intensive and not flexible towards substrate types. Nanoimprint has had the potential for over 20 years to bring a cost-effective, flexible method for large area nano-patterning. Over the last 3-4 years, nanoimprint has made great progress towards volume production. The main accelerator has been the switch from rigid- to wafer-scale soft stamps and tool improvements for step and repeat patterning. In this paper, we discuss substrate conformal imprint lithography (SCIL), which combines nanometer resolution, low patterns distortion, and overlay alignment, traditionally reserved for rigid stamps, with the flexibility and robustness of soft stamps. This was made possible by a combination of a new soft stamp material, an inorganic resist, combined with an innovative imprint method. Finally, a volume production solution will be presented, which can pattern up to 60 wafers per hour.

Fabrication of sub-wavelength photonic structures by nanoimprint lithography

Energy Technology Data Exchange (ETDEWEB)

Kontio, J.

2013-11-01

Nanoimprint lithography (NIL) is a novel but already a mature lithography technique. In this thesis it is applied to the fabrication of nanophotonic devices using its main advantage: the fast production of sub-micron features in high volume in a cost-effective way. In this thesis, fabrication methods for conical metal structures for plasmonic applications and sub-wavelength grating based broad-band mirrors are presented. Conical metal structures, nanocones, with plasmonic properties are interesting because they enable concentrating the energy of light in very tight spots resulting in very high local intensities of electromagnetic energy. The nanocone formation process is studied with several metals. Enhanced second harmonic generation using gold nanocones is presented. Bridged-nanocones are used to enhance Raman scattering from a dye solution. The sub-wavelength grating mirror is an interesting structure for photonics because it is very simple to fabricate and its reflectivity can be extended to the far infrared wavelength range. It also has polarization dependent properties which are used in this thesis to stabilize the output beam of infrared semiconductor disk laser. NIL is shown to be useful a technique in the fabrication of nanophotonic devices in the novel and rapidly growing field of plasmonics and also in more traditional, but still developing, semiconductor laser applications (orig.)

Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

NARCIS (Netherlands)

Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

2007-01-01

The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

Magnetic anisotropy in a permalloy microgrid fabricated by near-field optical lithography

International Nuclear Information System (INIS)

Li, S. P.; Lebib, A.; Peyrade, D.; Natali, M.; Chen, Y.; Lew, W. S.; Bland, J. A. C.

2001-01-01

We report the fabrication and magnetic properties of permalloy microgrids prepared by near-field optical lithography and characterized using high-sensitivity magneto-optical Kerr effect techniques. A fourfold magnetic anisotropy induced by the grid architecture is identified. [copyright] 2001 American Institute of Physics

Shadow edge lithography for nanoscale patterning and manufacturing

International Nuclear Information System (INIS)

Bai, John G; Chang, C-L; Chung, Jae-Hyun; Lee, Kyong-Hoon

2007-01-01

We demonstrate a wafer-scale nanofabrication method using the shadow effect in physical vapor deposition. An analytical model is presented to predict the formation of nanoscale gaps created by the shadow effect of a prepatterned edge on a deposition plane. The theoretical prediction agrees quantitatively with the widths of the fabricated nanogaps and nanochannels. In the diffusion experiments, both λ-DNA and fluorescein molecules were successfully introduced into the nanochannels. The proposed shadow edge lithography has potential to be a candidate for mass-producing nanostructures

Simple Multi-level Microchannel Fabrication by Pseudo-Grayscale Backside Diffused Light Lithography.

Science.gov (United States)

Lai, David; Labuz, Joseph M; Kim, Jiwon; Luker, Gary D; Shikanov, Ariella; Takayama, Shuichi

2013-11-14

Photolithography of multi-level channel features in microfluidics is laborious and/or costly. Grayscale photolithography is mostly used with positive photoresists and conventional front side exposure, but the grayscale masks needed are generally costly and positive photoresists are not commonly used in microfluidic rapid prototyping. Here we introduce a simple and inexpensive alternative that uses pseudo-grayscale (pGS) photomasks in combination with backside diffused light lithography (BDLL) and the commonly used negative photoresist, SU-8. BDLL can produce smooth multi-level channels of gradually changing heights without use of true grayscale masks because of the use of diffused light. Since the exposure is done through a glass slide, the photoresist is cross-linked from the substrate side up enabling well-defined and stable structures to be fabricated from even unspun photoresist layers. In addition to providing unique structures and capabilities, the method is compatible with the "garage microfluidics" concept of creating useful tools at low cost since pGS BDLL can be performed with the use of only hot plates and a UV transilluminator: equipment commonly found in biology labs. Expensive spin coaters or collimated UV aligners are not needed. To demonstrate the applicability of pGS BDLL, a variety of weir-type cell traps were constructed with a single UV exposure to separate cancer cells (MDA-MB-231, 10-15 μm in size) from red blood cells (RBCs, 2-8 μm in size) as well as follicle clusters (40-50 μm in size) from cancer cells (MDA-MB-231, 10-15 μm in size).

Investigating the role of implicit prototypes in the prototype willingness model.

Science.gov (United States)

Howell, Jennifer L; Ratliff, Kate A

2017-06-01

One useful theory to predict health behavior is the prototype-willingness model (PWM), which posits that people are more willing to engage in behavior to the extent that they have a positive view of the prototypical person who performs that behavior. The goal of the present research is to test whether adding an implicit measure of prototype favorability might improve explanatory power in the PWM. Two studies examined whether implicit prototype favorability uniquely predicted White women's intentions to engage in healthy sun behavior over the next 3-6 months, and their willingness to engage in risky sun behavior, should the opportunity arise. The results suggested that implicit prototype favorability, particularly implicit prototypes of those who engage in risky UV-related behaviors, uniquely predicted intentions to engage in healthy sun behavior and willingness to engage in risky sun behavior in the PWM.

Software Prototyping

Science.gov (United States)

Del Fiol, Guilherme; Hanseler, Haley; Crouch, Barbara Insley; Cummins, Mollie R.

2016-01-01

Summary Background Health information exchange (HIE) between Poison Control Centers (PCCs) and Emergency Departments (EDs) could improve care of poisoned patients. However, PCC information systems are not designed to facilitate HIE with EDs; therefore, we are developing specialized software to support HIE within the normal workflow of the PCC using user-centered design and rapid prototyping. Objective To describe the design of an HIE dashboard and the refinement of user requirements through rapid prototyping. Methods Using previously elicited user requirements, we designed low-fidelity sketches of designs on paper with iterative refinement. Next, we designed an interactive high-fidelity prototype and conducted scenario-based usability tests with end users. Users were asked to think aloud while accomplishing tasks related to a case vignette. After testing, the users provided feedback and evaluated the prototype using the System Usability Scale (SUS). Results Survey results from three users provided useful feedback that was then incorporated into the design. After achieving a stable design, we used the prototype itself as the specification for development of the actual software. Benefits of prototyping included having 1) subject-matter experts heavily involved with the design; 2) flexibility to make rapid changes, 3) the ability to minimize software development efforts early in the design stage; 4) rapid finalization of requirements; 5) early visualization of designs; 6) and a powerful vehicle for communication of the design to the programmers. Challenges included 1) time and effort to develop the prototypes and case scenarios; 2) no simulation of system performance; 3) not having all proposed functionality available in the final product; and 4) missing needed data elements in the PCC information system. PMID:27081404

High-Resolution Graphene Films for Electrochemical Sensing via Inkjet Maskless Lithography.

Science.gov (United States)

Hondred, John A; Stromberg, Loreen R; Mosher, Curtis L; Claussen, Jonathan C

2017-10-24

Solution-phase printing of nanomaterial-based graphene inks are rapidly gaining interest for fabrication of flexible electronics. However, scalable manufacturing techniques for high-resolution printed graphene circuits are still lacking. Here, we report a patterning technique [i.e., inkjet maskless lithography (IML)] to form high-resolution, flexible, graphene films (line widths down to 20 μm) that significantly exceed the current inkjet printing resolution of graphene (line widths ∼60 μm). IML uses an inkjet printed polymer lacquer as a sacrificial pattern, viscous spin-coated graphene, and a subsequent graphene lift-off to pattern films without the need for prefabricated stencils, templates, or cleanroom technology (e.g., photolithography). Laser annealing is employed to increase conductivity on thermally sensitive, flexible substrates [polyethylene terephthalate (PET)]. Laser annealing and subsequent platinum nanoparticle deposition substantially increases the electroactive nature of graphene as illustrated by electrochemical hydrogen peroxide (H 2 O 2 ) sensing [rapid response (5 s), broad linear sensing range (0.1-550 μm), high sensitivity (0.21 μM/μA), and low detection limit (0.21 μM)]. Moreover, high-resolution, complex graphene circuits [i.e., interdigitated electrodes (IDE) with varying finger width and spacing] were created with IML and characterized via potassium chloride (KCl) electrochemical impedance spectroscopy (EIS). Results indicated that sensitivity directly correlates to electrode feature size as the IDE with the smallest finger width and spacing (50 and 50 μm) displayed the largest response to changes in KCl concentration (∼21 kΩ). These results indicate that the developed IML patterning technique is well-suited for rapid, solution-phase graphene film prototyping on flexible substrates for numerous applications including electrochemical sensing.

Fabrication of nanochannels on polyimide films using dynamic plowing lithography

Science.gov (United States)

Stoica, Iuliana; Barzic, Andreea Irina; Hulubei, Camelia

2017-12-01

Three distinct polyimide films were analyzed from the point of view of their morphology in order to determine if their surface features can be adapted for applications where surface anisotropy is mandatory. Channels of nanometric dimensions were created on surface of the specimens by using a less common atomic force microscopy (AFM) method, namely Dynamic Plowing Lithography (DPL). The changes generated by DPL procedure were monitored through the surface texture and other functional parameters, denoting the surface orientation degree and also bearing and fluid retention properties. The results revealed that in the same nanolithography conditions, the diamine and dianhydride moieties have affected the characteristics of the nanochannels. This was explained based on the aliphatic/aromatic nature of the monomers and the backbone flexibility. The reported data are of great importance in designing custom nanostructures with enhanced anisotropy on surface of polyimide films for liquid crystal orientation or guided cell growth purposes. At the end, to track the effect of the nanolithography process on the tip sharpness, degradation and contamination, the blind tip reconstruction was performed on AFM probe, before and after lithography experiments, using TGT1 test grating AFM image.

Business dynamics of lithography at very low k1 factors

Science.gov (United States)

Harrell, Sam; Preil, Moshe E.

1999-07-01

Lithography is the largest capital investment and the largest operating cost component of leading edge semiconductor fabs. In addition, it is the dominant factor in determining the performance of a semiconductor device and is important in determining the yield and thus the economics of a semiconductor circuit. To increase competitiveness and broaden adoption of circuits and the end products in which they are used, there has been and continues to be a dramatic acceleration in the industry roadmap. A critical factor in the acceleration is driving the lithographic images to smaller feature size. There has always been economic tension between the pace of change and the resultant circuit cost. The genius of the semiconductor industry has been in its ability to balance its technology with economic factors and deliver outstanding value to those using the circuits to add value to their end products. The critical question today is whether optical lithography can be successfully and economically extended to maintain and improve the economic benefits of higher complexity circuits. In this paper we will discuss some of these significant tradeoffs required to maintain optically based lithographic progress on the roadmap at acceptable cost.

Direct modification of silicon surface by nanosecond laser interference lithography

Energy Technology Data Exchange (ETDEWEB)

Wang, Dapeng [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Wang, Zuobin, E-mail: wangz@cust.edu.cn [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Zhang, Ziang [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); Yue, Yong [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Li, Dayou [JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Maple, Carsten [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom)

2013-10-01

Periodic and quasi-periodic structures on silicon surface have numerous significant applications in photoelectronics and surface engineering. A number of technologies have been developed to fabricate the structures in various research fields. In this work, we take the strategy of direct nanosecond laser interference lithography technology, and focus on the silicon material to create different well-defined surface structures based on theoretical analysis of the formation of laser interference patterns. Two, three and four-beam laser interference systems were set up to fabricate the grating, regular triangle and square structures on silicon surfaces, respectively. From the AFM micrographs, the critical features of structures have a dependence on laser fluences. For a relative low laser fluence, grating and dot structures formed with bumps due to the Marangoni Effect. With the increase of laser fluences, melt and evaporation behaviors can be responsible for the laser modification. By properly selecting the process parameters, well-defined grating and dot structures can been achieved. It can be demonstrated that direct laser interference lithography is a facile and efficient technology with the advantage of a single process procedure over macroscale areas for the fabrication of micro and nano structures.

Integral characteristics of spectra of ions important for EUV lithography

International Nuclear Information System (INIS)

Karazija, R; Kucas, S; Momkauskaite, A

2006-01-01

The emission spectrum corresponding to the 4p 5 4d N+1 + 4p 6 4d N-1 4f → 4p 6 4d N transition array is concentrated in a narrow interval of wavelengths. That is due to the existence of an approximate selection rule and quenching of some lines by configuration mixing. Thus such emission of elements near Z = 50 is considered to be the main candidate for the EUV lithography source at λ = 13.5 nm. In the present work the regularities of these transition arrays are considered using their integral characteristics: average energy, total line strength, variance and interval of array containing some part of the total transition probability. Calculations for various ions of elements In, Sn, Sb, Te, I and Xe have been performed in a two-configuration pseudorelativistic approximation, which describes fairly well the main features of the spectra. The variation in the values of the main integral characteristics of the spectra with atomic number and ionization degree gives the possibility of comparing quantitatively the suitability of the emission of various ions for EUV lithography

Illumination system for X-ray lithography

International Nuclear Information System (INIS)

Buckley, W.D.

1989-01-01

An X-ray lithography system is described, comprising: a point source of X-Ray radiation; a wafer plane disposed in spaced relation to the point source of X-Ray radiation; a mask disposed between the point source of X-Ray radiation and the wafer plane whereby X-Ray radiation from the point source of X-ray radiation passes through the mask to the water plane; and X-Ray absorbent means mounted between the point source of X-Ray radiation and the wafer plane, the X-Ray absorbent means being of quadratically absorption from maximum absorption at the center to minimum absorption at the edge so as to have a radial absorption gradient profile to compensate for radial flux variation of the X-Ray radiation

A simple electron-beam lithography system

DEFF Research Database (Denmark)

Mølhave, Kristian; Madsen, Dorte Nørgaard; Bøggild, Peter

2005-01-01

A large number of applications of electron-beam lithography (EBL) systems in nanotechnology have been demonstrated in recent years. In this paper we present a simple and general-purpose EBL system constructed by insertion of an electrostatic deflector plate system at the electron-beam exit...... of the column of a scanning electron microscope (SEM). The system can easily be mounted on most standard SEM systems. The tested setup allows an area of up to about 50 x 50 pm to be scanned, if the upper limit for acceptable reduction of the SEM resolution is set to 10 run. We demonstrate how the EBL system can...... be used to write three-dimensional nanostructures by electron-beam deposition. (C) 2004 Elsevier B.V. All rights reserved....

Review of vacuum systems for x-ray lithography light sources

International Nuclear Information System (INIS)

Schuchman, J.C.

1990-01-01

This paper will review and give a status report on vacuum systems for X-Ray lithography light sources. It will include conventional machines and compact machines (machines using superconducting magnets). The vacuum systems will be described and compared with regard to basic machine parameters, pumping systems, types of pumps, chamber design and material, gauging and diagnostics, and machine performane. 23 refs., 8 figs., 1 tab

Reduction of nanowire diameter beyond lithography limits by controlled catalyst dewetting

Science.gov (United States)

Calahorra, Yonatan; Kerlich, Alexander; Amram, Dor; Gavrilov, Arkady; Cohen, Shimon; Ritter, Dan

2016-04-01

Catalyst assisted vapour-liquid-solid is the most common method to realize bottom-up nanowire growth; establishing a parallel process for obtaining nanoscale catalysts at pre-defined locations is paramount for further advancement towards commercial nanowire applications. Herein, the effect of a selective area mask on the dewetting of metallic nanowire catalysts, deposited within lithography-defined mask pinholes, is reported. It was found that thin disc-like catalysts, with diameters of 120-450 nm, were transformed through dewetting into hemisphere-like catalysts, having diameters 2-3 fold smaller; the process was optimized to about 95% yield in preventing catalyst splitting, as would otherwise be expected due to their thickness-to-diameter ratio, which was as low as 1/60. The catalysts subsequently facilitated InP and InAs nanowire growth. We suggest that the mask edges prevent surface migration mediated spreading of the dewetted metal, and therefore induce its agglomeration into a single particle. This result presents a general strategy to diminish lithography-set dimensions for NW growth, and may answer a fundamental challenge faced by bottom-up nanowire technology.

Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

Energy Technology Data Exchange (ETDEWEB)

Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Rodt, Sven, E-mail: srodt@physik.tu-berlin.de; Reitzenstein, Stephan [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin (Germany); Strittmatter, André [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin (Germany); Otto-von-Guericke Universität Magdeburg, Universitätsplatz 2, D-39106 Magdeburg (Germany)

2015-07-15

We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

Preparation of Octadecyltrichlorosilane Nanopatterns Using Particle Lithography: An Atomic Force Microscopy Laboratory

Science.gov (United States)

Highland, Zachary L.; Saner, ChaMarra K.; Garno, Jayne C.

2018-01-01

Experiments are described that involve undergraduates learning concepts of nanoscience and chemistry. Students prepare nanopatterns of organosilane films using protocols of particle lithography. A few basic techniques are needed to prepare samples, such as centrifuging, mixing, heating, and drying. Students obtain hands-on skills with nanoscale…

Solution Prototype

DEFF Research Database (Denmark)

Efeoglu, Arkin; Møller, Charles; Serie, Michel

2013-01-01

This paper outlines an artifact building and evaluation proposal. Design Science Research (DSR) studies usually consider encapsulated artifact that have relationships with other artifacts. The solution prototype as a composed artifact demands for a more comprehensive consideration in its systematic...... environment. The solution prototype that is composed from blending product and service prototype has particular impacts on the dualism of DSR’s “Build” and “Evaluate”. Since the mix between product and service prototyping can be varied, there is a demand for a more agile and iterative framework. Van de Ven......’s research framework seems to fit this purpose. Van de Ven allows for an iterative research approach to problem solving with flexible starting point. The research activity is the result between the iteration of two dimensions. This framework focuses on the natural evaluation, particularly on ex...

Report of the workshop on transferring X-ray Lithography Synchrotron (XLS) technology to industry

Energy Technology Data Exchange (ETDEWEB)

Marcuse, W.

1987-01-01

This paper reports on plans to develop an x-ray synchrotron for use in lithography. The primary concern of the present paper is technology transfer from national laboratories to private industry. (JDH)

Softening behaviour of concrete : experimental research

NARCIS (Netherlands)

Geel, van H.J.G.M.; Rutten, H.S.; Fijneman, H.J.

1994-01-01

Uniaxial compressive softening tests on two types of concrete have been carried out, varying the type of loading platen and specimen size. In total 37 specimens were tested, 18 with polished steel loading platens and 19 with teflon loading platens. Half of the specimens were made of normal strength

Multilayer, Stacked Spiral Copper Inductors on Silicon with Micro-Henry Inductance Using Single-Level Lithography

Directory of Open Access Journals (Sweden)

Timothy Reissman

2012-01-01

Full Text Available We present copper structures composed of multilayer, stacked inductors (MLSIs with tens of micro-Henry inductance for use in low frequency (sub 100 MHz, power converter technology. Unique to this work is the introduction of single-level lithography over the traditional two-level approach to create each inductor layer. The result is a simplified fabrication process which results in a reduction in the number of lithography steps per inductor (metal layer and a reduction in the necessary alignment precision. Additionally, we show that this fabrication process yields strong adhesion amongst the layers, since even after a postprocess abrasion technique at the inner diameter of the inductors, no shearing occurs and connectivity is preserved. In total, three separate structures were fabricated using the single-level lithography approach, each with a three-layered, stacked inductor design but with varied geometries. Measured values for each of the structures were extracted, and the following results were obtained: inductance values of 24.74, 17.25, and 24.74 μH, self-resonances of 9.87, 5.72, and 10.58 MHz, and peak quality factors of 2.26, 2.05, and 4.6, respectively. These values are in good agreement with the lumped parameter model presented.

Layout compliance for triple patterning lithography: an iterative approach

Science.gov (United States)

Yu, Bei; Garreton, Gilda; Pan, David Z.

2014-10-01

As the semiconductor process further scales down, the industry encounters many lithography-related issues. In the 14nm logic node and beyond, triple patterning lithography (TPL) is one of the most promising techniques for Metal1 layer and possibly Via0 layer. As one of the most challenging problems in TPL, recently layout decomposition efforts have received more attention from both industry and academia. Ideally the decomposer should point out locations in the layout that are not triple patterning decomposable and therefore manual intervention by designers is required. A traditional decomposition flow would be an iterative process, where each iteration consists of an automatic layout decomposition step and manual layout modification task. However, due to the NP-hardness of triple patterning layout decomposition, automatic full chip level layout decomposition requires long computational time and therefore design closure issues continue to linger around in the traditional flow. Challenged by this issue, we present a novel incremental layout decomposition framework to facilitate accelerated iterative decomposition. In the first iteration, our decomposer not only points out all conflicts, but also provides the suggestions to fix them. After the layout modification, instead of solving the full chip problem from scratch, our decomposer can provide a quick solution for a selected portion of layout. We believe this framework is efficient, in terms of performance and designer friendly.

An integrated lithography concept with application on 45-nm ½ pitch flash memory devices

Science.gov (United States)

Dusa, Mircea; Engelen, Andre; Finders, Jo

2006-03-01

It is well accepted to judge imaging capability of an exposure tool primarily on printing equal line-spaces, at a minimum ½ pitch. Further on, combining line-space minimum ½ pitches with scanner maximum NA, defines the process k I. From a lithographer viewpoint, flash memory device is the perfect candidate to achieve lowest k I lithography for a given NA. This is justified by flash layout specific, with regular and relative simple 1-D topology of the critical layers that look like line-space gratings. In reality, flash layout presents a subtle topology and cannot be considered a simple 1-D line-space problem. Uniqueness to flash layout is the array-end zones, where pattern regularity is broken up by features with dimensions and separation of n x ½ pitch, where n is an integer number that we used in this work to manipulate litho process latitudes. Integrated lithography concept seeks to tweak flash pattern details and tune it with scanner control parameters. We introduce feature-center placement through focus and dose as the metric to characterize a cross-coupling phenomena occurring between adjacent features located at array-end of typical flash poly wordline layer. We comparedthe metric behavior with usual litho process window parameters and identified interactions with scanner CDU control parameters. We show how feature-center placement errors are direct functions of optical and physical characteristics of mask materials, attenuated PSM or binary, and of layout array-end topology. Imaging at extreme low-k I, effects from layout specifics and mask materials are best characterized by full vector, rigorous EM simulation, instead of scalar approach, typically used for OPC treatment. Predicted CDU performance of 1.2NA scanner, based on integrated lithography concept, matched very well the experimental results in printing 45nm ½ pitch flash wordline layer. Results show that 1.2NA scanner, operating at 0.28 k I could be an effective lithography solution for 45nm

High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements

Science.gov (United States)

Mulkens, Jan; Kubis, Michael; Hinnen, Paul; de Graaf, Roelof; van der Laan, Hans; Padiy, Alexander; Menchtchikov, Boris

2013-04-01

Immersion lithography is being extended to the 20-nm and 14-nm node and the lithography performance requirements need to be tightened further to enable this shrink. In this paper we present an integral method to enable high-order fieldto- field corrections for both imaging and overlay, and we show that this method improves the performance with 20% - 50%. The lithography architecture we build for these higher order corrections connects the dynamic scanner actuators with the angle resolved scatterometer via a separate application server. Improvements of CD uniformity are based on enabling the use of freeform intra-field dose actuator and field-to-field control of focus. The feedback control loop uses CD and focus targets placed on the production mask. For the overlay metrology we use small in-die diffraction based overlay targets. Improvements of overlay are based on using the high order intra-field correction actuators on a field-tofield basis. We use this to reduce the machine matching error, extending the heating control and extending the correction capability for process induced errors.

Cooperative Prototyping Experiments

DEFF Research Database (Denmark)

Bødker, Susanne; Grønbæk, Kaj

1989-01-01

This paper describes experiments with a design technique that we denote cooperative prototyping. The experiments consider design of a patient case record system for municipal dental clinics in which we used HyperCard, an off the shelf programming environment for the Macintosh. In the ecperiments we...... tried to achieve a fluent work-like evaluation of prototypes where users envisioned future work with a computer tool, at the same time as we made on-line modifications of prototypes in cooperation with the users when breakdown occur in their work-like evaluation. The experiments showed...... that it was possible to make a number of direct manipulation changes of prototypes in cooperation with the users, in interplay with their fluent work-like evaluation of these. However, breakdown occurred in the prototyping process when we reached the limits of the direct manipulation support for modification. From...

Playing with small objects Nano lithography and manipulation A.K. ...

Indian Academy of Sciences (India)

Table of contents. Playing with small objects Nano lithography and manipulation A.K.Raychaudhuri Department of Physics IISc · PowerPoint Presentation · Slide 3 · Slide 4 · Slide 5 · Slide 6 · Atomic Force Microscopy · Slide 8 · Slide 9 · Slide 10 · Slide 11 · Slide 12 · Slide 13 · Slide 14 · Slide 15 · Slide 16 · Slide 17 · Slide 18.

Unikabeton Prototype

DEFF Research Database (Denmark)

Søndergaard, Asbjørn; Dombernowsky, Per

2011-01-01

The Unikabeton prototype structure was developed as the finalization of the cross-disciplinary research project Unikabeton, exploring the architectural potential in linking the computational process of topology optimisation with robot fabrication of concrete casting moulds. The project was elabor......The Unikabeton prototype structure was developed as the finalization of the cross-disciplinary research project Unikabeton, exploring the architectural potential in linking the computational process of topology optimisation with robot fabrication of concrete casting moulds. The project...... of Architecture was to develop a series of optimisation experiments, concluding in the design and optimisation of a full scale prototype concrete structure....

Topology optimization for optical projection lithography with manufacturing uncertainties

DEFF Research Database (Denmark)

Zhou, Mingdong; Lazarov, Boyan Stefanov; Sigmund, Ole

2014-01-01

to manufacturing without additional optical proximity correction (OPC). The performance of the optimized device is robust toward the considered process variations. With the proposed unified approach, the design for photolithography is achieved by considering the optimal device performance and manufacturability......This article presents a topology optimization approach for micro-and nano-devices fabricated by optical projection lithography. Incorporating the photolithography process and the manufacturing uncertainties into the topology optimization process results in a binary mask that can be sent directly...

40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication

NARCIS (Netherlands)

Luttge, R.; Adam, D.; Burkhardt, F.; Hoke, F.; Schacke, H.; Schmidt, M.; Wolf, H.; Schmidt, A.

1999-01-01

High precision LIGA masks require a soft X-ray pattern transfer from intermediate masks by means of electron beam lithography. Such a process has been realized using an upgraded Leica ZBA 23 machine with an acceleration voltage of 40 kV. Three process variations of the developer system, so called GG

Lithography-induced limits to scaling of design quality

Science.gov (United States)

Kahng, Andrew B.

2014-03-01

Quality and value of an IC product are functions of power, performance, area, cost and reliability. The forthcoming 2013 ITRS roadmap observes that while manufacturers continue to enable potential Moore's Law scaling of layout densities, the "realizable" scaling in competitive products has for some years been significantly less. In this paper, we consider aspects of the question, "To what extent should this scaling gap be blamed on lithography?" Non-ideal scaling of layout densities has been attributed to (i) layout restrictions associated with multi-patterning technologies (SADP, LELE, LELELE), as well as (ii) various ground rule and layout style choices that stem from misalignment, reliability, variability, device architecture, and electrical performance vs. power constraints. Certain impacts seem obvious, e.g., loss of 2D flexibility and new line-end placement constraints with SADP, or algorithmically intractable layout stitching and mask coloring formulations with LELELE. However, these impacts may well be outweighed by weaknesses in design methodology and tooling. Arguably, the industry has entered a new era in which many new factors - (i) standard-cell library architecture, and layout guardbanding for automated place-and-route: (ii) performance model guardbanding and signoff analyses: (iii) physical design and manufacturing handoff algorithms spanning detailed placement and routing, stitching and RET; and (iv) reliability guardbanding - all contribute, hand in hand with lithography, to a newly-identified "design capability gap". How specific aspects of process and design enablements limit the scaling of design quality is a fundamental question whose answer must guide future RandD investment at the design-manufacturing interface. terface.

UV curing imprint lithography for micro-structure in MEMS manufacturing

International Nuclear Information System (INIS)

Ding Yucheng; Liu Hongzhong; Lu Bingheng; Qiu Zhihui

2006-01-01

Imprint lithography has been gaining popularity as a new method to fabricate microelectro mechanical systems. The main advantages of the IL are its extremely low set-up cost, high replicating accuracy and extended fabricating critical dimension. Compare to traditional optical lithography, IL has the advantages of being able to fabricate complex pattern structure with high-aspect ratio. However, the thermal and loading errors can reduce pattern transferring fidelity. In this paper, UV curing method is used in IL process which can avoid the heat distortion of tools. Additionally, a six-step loading process for template pressing into resist film is developed. The performance of this process include: the loading locus is continuous with very high accuracy (10nm), the press releasing control (accuracy up to 1 psi) can reduce and avoid the distortion of template structure and stage supports. This process can achieve a residual layer with thickness of 20nm and avoid the elastic stamp distorted (under 20nm) at the same time. The press force can reach up to 300 psi for 6 cm 2 pattern size but the friction force during demould process can be reduced to 30 psi. Experimental results reveal that it is a novel and robust process with high fidelity in micro/nano structures manufacturing

Advanced 0.3-NA EUV lithography capabilities at the ALS

International Nuclear Information System (INIS)

Naulleau, Patrick; Anderson, Erik; Dean, Kim; Denham, Paul; Goldberg, Kenneth A.; Hoef, Brian; Jackson, Keith

2005-01-01

For volume nanoelectronics production using Extreme ultraviolet (EUV) lithography [1] to become a reality around the year 2011, advanced EUV research tools are required today. Microfield exposure tools have played a vital role in the early development of EUV lithography [2-4] concentrating on numerical apertures (NA) of 0.2 and smaller. Expected to enter production at the 32-nm node with NAs of 0.25, EUV can no longer rely on these early research tools to provide relevant learning. To overcome this problem, a new generation of microfield exposure tools, operating at an NA of 0.3 have been developed [5-8]. Like their predecessors, these tools trade off field size and speed for greatly reduced complexity. One of these tools is implemented at Lawrence Berkeley National Laboratory's Advanced Light Source synchrotron radiation facility. This tool gets around the problem of the intrinsically high coherence of the synchrotron source [9,10] by using an active illuminator scheme [11]. Here we describe recent printing results obtained from the Berkeley EUV exposure tool. Limited by the availability of ultra-high resolution chemically amplified resists, present resolution limits are approximately 32 nm for equal lines and spaces and 27 nm for semi-isolated lines

Photonic integrated circuits: new challenges for lithography

Science.gov (United States)

Bolten, Jens; Wahlbrink, Thorsten; Prinzen, Andreas; Porschatis, Caroline; Lerch, Holger; Giesecke, Anna Lena

2016-10-01

In this work routes towards the fabrication of photonic integrated circuits (PICs) and the challenges their fabrication poses on lithography, such as large differences in feature dimension of adjacent device features, non-Manhattan-type features, high aspect ratios and significant topographic steps as well as tight lithographic requirements with respect to critical dimension control, line edge roughness and other key figures of merit not only for very small but also for relatively large features, are highlighted. Several ways those challenges are faced in today's low-volume fabrication of PICs, including the concept multi project wafer runs and mix and match approaches, are presented and possible paths towards a real market uptake of PICs are discussed.

Development of GaN-based nanosensors using surface charge lithography

International Nuclear Information System (INIS)

Popa, Veaceslav; Braniste, Tudor; Volciuc, Olesea; Pavlidis, Dimitris; Sarua, Andrei; Kuball, Martin; Heard, Peter

2011-01-01

Semiconductor nanotechnology is a fast developing branch of modern engineering that offers perspectives for the development of electronic devices with superior parameters. A special and important niche in nanotechnology is allocated to the fabrication of nanosensors which are expected to exhibit higher sensitivity in comparison with classical microelectronic sensors. Various aspects of fabrication of GaN based nanosensors using Surface Charge Lithography are discussed and preliminary tests for gas sensors applications are presented.

Molecular Switch for Sub-Diffraction Laser Lithography by Photoenol Intermediate-State Cis-Trans Isomerization.

Science.gov (United States)

Mueller, Patrick; Zieger, Markus M; Richter, Benjamin; Quick, Alexander S; Fischer, Joachim; Mueller, Jonathan B; Zhou, Lu; Nienhaus, Gerd Ulrich; Bastmeyer, Martin; Barner-Kowollik, Christopher; Wegener, Martin

2017-06-27

Recent developments in stimulated-emission depletion (STED) microscopy have led to a step change in the achievable resolution and allowed breaking the diffraction limit by large factors. The core principle is based on a reversible molecular switch, allowing for light-triggered activation and deactivation in combination with a laser focus that incorporates a point or line of zero intensity. In the past years, the concept has been transferred from microscopy to maskless laser lithography, namely direct laser writing (DLW), in order to overcome the diffraction limit for optical lithography. Herein, we propose and experimentally introduce a system that realizes such a molecular switch for lithography. Specifically, the population of intermediate-state photoenol isomers of α-methyl benzaldehydes generated by two-photon absorption at 700 nm fundamental wavelength can be reversibly depleted by simultaneous irradiation at 440 nm, suppressing the subsequent Diels-Alder cycloaddition reaction which constitutes the chemical core of the writing process. We demonstrate the potential of the proposed mechanism for STED-inspired DLW by covalently functionalizing the surface of glass substrates via the photoenol-driven STED-inspired process exploiting reversible photoenol activation with a polymerization initiator. Subsequently, macromolecules are grown from the functionalized areas and the spatially coded glass slides are characterized by atomic-force microscopy. Our approach allows lines with a full-width-at-half-maximum of down to 60 nm and line gratings with a lateral resolution of 100 nm to be written, both surpassing the diffraction limit.

Prototyping real-time systems

OpenAIRE

Clynch, Gary

1994-01-01

The traditional software development paradigm, the waterfall life cycle model, is defective when used for developing real-time systems. This thesis puts forward an executable prototyping approach for the development of real-time systems. A prototyping system is proposed which uses ESML (Extended Systems Modelling Language) as a prototype specification language. The prototyping system advocates the translation of non-executable ESML specifications into executable LOOPN (Language of Object ...

Reduction of nanowire diameter beyond lithography limits by controlled catalyst dewetting

International Nuclear Information System (INIS)

Calahorra, Yonatan; Kerlich, Alexander; Gavrilov, Arkady; Cohen, Shimon; Ritter, Dan; Amram, Dor

2016-01-01

Catalyst assisted vapour-liquid–solid is the most common method to realize bottom-up nanowire growth; establishing a parallel process for obtaining nanoscale catalysts at pre-defined locations is paramount for further advancement towards commercial nanowire applications. Herein, the effect of a selective area mask on the dewetting of metallic nanowire catalysts, deposited within lithography-defined mask pinholes, is reported. It was found that thin disc-like catalysts, with diameters of 120–450 nm, were transformed through dewetting into hemisphere-like catalysts, having diameters 2–3 fold smaller; the process was optimized to about 95% yield in preventing catalyst splitting, as would otherwise be expected due to their thickness-to-diameter ratio, which was as low as 1/60. The catalysts subsequently facilitated InP and InAs nanowire growth. We suggest that the mask edges prevent surface migration mediated spreading of the dewetted metal, and therefore induce its agglomeration into a single particle. This result presents a general strategy to diminish lithography-set dimensions for NW growth, and may answer a fundamental challenge faced by bottom-up nanowire technology. (paper)

Experimental demonstration of line-width modulation in plasmonic lithography using a solid immersion lens-based active nano-gap control

International Nuclear Information System (INIS)

Lee, Won-Sup; Kim, Taeseob; Choi, Guk-Jong; Lim, Geon; Joe, Hang-Eun; Gang, Myeong-Gu; Min, Byung-Kwon; Park, No-Cheol; Moon, Hyungbae; Kim, Do-Hyung; Park, Young-Pil

2015-01-01

Plasmonic lithography has been used in nanofabrication because of its utility beyond the diffraction limit. The resolution of plasmonic lithography depends on the nano-gap between the nanoaperture and the photoresist surface—changing the gap distance can modulate the line-width of the pattern. In this letter, we demonstrate solid-immersion lens based active non-contact plasmonic lithography, applying a range of gap conditions to modulate the line-width of the pattern. Using a solid-immersion lens-based near-field control system, the nano-gap between the exit surface of the nanoaperture and the media can be actively modulated and maintained to within a few nanometers. The line-widths of the recorded patterns using 15- and 5-nm gaps were 47 and 19.5 nm, respectively, which matched closely the calculated full-width at half-maximum. From these results, we conclude that changing the nano-gap within a solid-immersion lens-based plasmonic head results in varying line-width patterns

Latex particle template lift-up guided gold wire-networks via evaporation lithography

KAUST Repository

Lone, Saifullah; Vakarelski, Ivan Uriev; Chew, Basil; Wang, Zhihong; Thoroddsen, Sigurdur T

2014-01-01

We describe a hybrid methodology that combines a two dimensional (2D) monolayer of latex particles (with a pitch size down to 1 μm) prepared by horizontal dry deposition, lift-up of a 2D template onto flat surfaces and evaporation lithography to fabricate metal micro- and nano wire-networks. This journal is

Fabrication and Characterization of Three Dimensional Photonic Crystals Generated by Multibeam Interference Lithography

Science.gov (United States)

Chen, Ying-Chieh

2009-01-01

Multibeam interference lithography is investigated as a manufacturing technique for three-dimensional photonic crystal templates. In this research, optimization of the optical setup and the photoresist initiation system leads to a significant improvement of the optical quality of the crystal, as characterized by normal incidence optical…

Scalable fabrication of nanostructured devices on flexible substrates using additive driven self-assembly and nanoimprint lithography

Science.gov (United States)

Watkins, James

2013-03-01

Roll-to-roll (R2R) technologies provide routes for continuous production of flexible, nanostructured materials and devices with high throughput and low cost. We employ additive-driven self-assembly to produce well-ordered polymer/nanoparticle hybrid materials that can serve as active device layers, we use highly filled nanoparticle/polymer hybrids for applications that require tailored dielectric constant or refractive index, and we employ R2R nanoimprint lithography for device scale patterning. Specific examples include the fabrication of flexible floating gate memory and large area films for optical/EM management. Our newly constructed R2R processing facility includes a custom designed, precision R2R UV-assisted nanoimprint lithography (NIL) system and hybrid nanostructured materials coaters.

Design considerations of 10 kW-scale, extreme ultraviolet SASE FEL for lithography

CERN Document Server

Pagani, C; Schneidmiller, E A; Yurkov, M V

2001-01-01

The semiconductor industry growth is driven to a large extent by steady advancements in microlithography. According to the newly updated industry road map, the 70 nm generation is anticipated to be available in the year 2008. However, the path to get there is not clear. The problem of construction of extreme ultraviolet (EUV) quantum lasers for lithography is still unsolved: progress in this field is rather moderate and we cannot expect a significant breakthrough in the near future. Nevertheless, there is clear path for optical lithography to take us to sub-100 nm dimensions. Theoretical and experimental work in Self-Amplified Spontaneous Emission (SASE) Free Electron Lasers (FEL) physics and the physics of superconducting linear accelerators over the last 10 years has pointed to the possibility of the generation of high-power optical beams with laser-like characteristics in the EUV spectral range. Recently, there have been important advances in demonstrating a high-gain SASE FEL at 100 nm wavelength (J. Andr...

Advanced light source technologies that enable high-volume manufacturing of DUV lithography extensions

Science.gov (United States)

Cacouris, Theodore; Rao, Rajasekhar; Rokitski, Rostislav; Jiang, Rui; Melchior, John; Burfeindt, Bernd; O'Brien, Kevin

2012-03-01

Deep UV (DUV) lithography is being applied to pattern increasingly finer geometries, leading to solutions like double- and multiple-patterning. Such process complexities lead to higher costs due to the increasing number of steps required to produce the desired results. One of the consequences is that the lithography equipment needs to provide higher operating efficiencies to minimize the cost increases, especially for producers of memory devices that experience a rapid decline in sales prices of these products over time. In addition to having introduced higher power 193nm light sources to enable higher throughput, we previously described technologies that also enable: higher tool availability via advanced discharge chamber gas management algorithms; improved process monitoring via enhanced on-board beam metrology; and increased depth of focus (DOF) via light source bandwidth modulation. In this paper we will report on the field performance of these technologies with data that supports the desired improvements in on-wafer performance and operational efficiencies.

The fabrication of highly ordered silver nanodot patterns by platinum assisted nanoimprint lithography

International Nuclear Information System (INIS)

Yoo, Hae-Wook; Jung, Jin-Mi; Lee, Su-kyung; Jung, Hee-Tae

2011-01-01

Silver has been widely used for optical sensing and imaging applications which benefit from localized surface plasmon resonance (LSPR) in a nanoscale configuration. Many attempts have been made to fabricate and control silver nanostructures in order to improve the high performance in sensing and other applications. However, a fatal mechanical weakness of silver and a lack of durability in oxygen-rich conditions have disrupted the manufacturing of reproducible nanostructures by the top-down lithography approach. In this study, we suggest a steady fabrication strategy to obtain highly ordered silver nanopatterns that are able to provide tunable LSPR characteristics. By using a protecting layer of platinum on a silver surface in the lithography process, we successfully obtained large-area (2.7 x 2.7 mm 2 ) silver nanopatterns with high reproducibility. This large-area silver nanopattern was capable of enhancing the low concentration of a Cy3 fluorescence signal (∼10 -10 M) which was labeled with DNA oligomers.

Angle transducer based on fiber Bragg gratings able for tunnel auscultation

Science.gov (United States)

Quintela, A.; Lázaro, J. M.; Quintela, M. A.; Mirapeix, J.; Muñoz-Berti, V.; López-Higuera, J. M.

2010-09-01

In this paper an angle transducer based on Fiber Bragg Grating (FBG) is presented. Two gratings are glued to a metallic platen, one in each side. It is insensitive to temperature changes, given that the temperature shifts affect equally to both FBG. When the platen is uniformly bent an uniform strain appears in both sides of the platen. It depends on the bend angle and the platen length and thickness. The transducer has been designed to be used in the auscultation of tunnels during their construction process and during their live time. The transducer design and its characterization are presented.

X-ray lithography for micro and nanotechnology at RRCAT

International Nuclear Information System (INIS)

Shukla, Rahul; Dhamgaye, V.P.; Jain, V.K.; Lodha, G.S.

2013-01-01

At Indus-2 Soft and Deep X-ray Lithography beamline (BL-07) is functional and is capable of developing various high aspect ratio and high resolution structures at micro and nano scale. These micro and nano structures can be made to work as a mechanism, sensor, actuator and transducer for varieties of applications and serve as basic building blocks for the development of X-ray and IR optics, LASERs, lab-on-a-chip, micromanipulators and nanotechnology. To achieve these goals we have started developing high aspect ratio comb-drives, electrostatic micromotors, micro fluidic channels, X-ray optics and novel transducers for RF applications by Deep X-ray Lithography (DXRL). Comb-drive is one of most studied electrostatic device in MEMS (Micro Electro-Mechanical Systems). It can be used as a sensor, actuator, resonator, energy harvester and filter. Analysis and simulation shows that the comb actuator of aspect ratio 16 (air gap 50 μm) will produce nearly 1.25 μm displacement when DC voltage of 100 V is applied. For fabrication, first time in India, Polyimide X-ray mask is realized and exposure and development is done at BL-7 at RRCAT. The displacement increases as gap between comb finger decreases. Further refinement is in progress to get higher output from high aspect ratio (∼ 80) comb actuators (i.e. 1 μm at 5V). The other important design parameters like resonance frequency, capacitance will also be discussed. (author)

Dr.LiTHO: a development and research lithography simulator

Science.gov (United States)

Fühner, Tim; Schnattinger, Thomas; Ardelean, Gheorghe; Erdmann, Andreas

2007-03-01

This paper introduces Dr.LiTHO, a research and development oriented lithography simulation environment developed at Fraunhofer IISB to flexibly integrate our simulation models into one coherent platform. We propose a light-weight approach to a lithography simulation environment: The use of a scripting (batch) language as an integration platform. Out of the great variety of different scripting languages, Python proved superior in many ways: It exhibits a good-natured learning-curve, it is efficient, available on virtually any platform, and provides sophisticated integration mechanisms for existing programs. In this paper, we will describe the steps, required to provide Python bindings for existing programs and to finally generate an integrated simulation environment. In addition, we will give a short introduction into selected software design demands associated with the development of such a framework. We will especially focus on testing and (both technical and user-oriented) documentation issues. Dr.LiTHO Python files contain not only all simulation parameter settings but also the simulation flow, providing maximum flexibility. In addition to relatively simple batch jobs, repetitive tasks can be pooled in libraries. And as Python is a full-blown programming language, users can add virtually any functionality, which is especially useful in the scope of simulation studies or optimization tasks, that often require masses of evaluations. Furthermore, we will give a short overview of the numerous existing Python packages. Several examples demonstrate the feasibility and productiveness of integrating Python packages into custom Dr.LiTHO scripts.

75 FR 81643 - In the Matter of Certain Semiconductor Products Made by Advanced Lithography Techniques and...

Science.gov (United States)

2010-12-28

... Semiconductor Products Made by Advanced Lithography Techniques and Products Containing Same; Notice of... Mexico) (``STC''), alleging a violation of section 337 in the importation, sale for [[Page 81644

Subwavelength optical lithography via classical light: A possible implementation

Science.gov (United States)

You, Jieyu; Liao, Zeyang; Hemmer, P. R.; Zubairy, M. Suhail

2018-04-01

The resolution of an interferometric optical lithography system is about the half wavelength of the illumination light. We proposed a method based on Doppleron resonance to achieve a resolution beyond half wavelength [Phys. Rev. Lett. 96, 163603 (2006), 10.1103/PhysRevLett.96.163603]. Here, we analyze a possible experimental demonstration of this method in the negatively charged silicon-vacancy (SiV-) system by considering realistic experimental parameters. Our results show that quarter wavelength resolution and beyond can be achieved in this system even in room temperature without using perturbation theory.

Optical near-field lithography on hydrogen-passivated silicon surfaces

DEFF Research Database (Denmark)

Madsen, Steen; Müllenborn, Matthias; Birkelund, Karen

1996-01-01

by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.......We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced...

Multichannel silicon WDM ring filters fabricated with DUV lithography

Science.gov (United States)

Lee, Jong-Moo; Park, Sahnggi; Kim, Gyungock

2008-09-01

We have fabricated 9-channel silicon wavelength-division-multiplexing (WDM) ring filters using 193 nm deep-ultraviolet (DUV) lithography and investigated the spectral properties of the ring filters by comparing the transmission spectra with and without an upper cladding. The average channel-spacing of the 9-channel WDM ring filter with a polymeric upper cladding is measured about 1.86 nm with the standard deviation of the channel-spacing about 0.34 nm. The channel crosstalk is about -30 dB, and the minimal drop loss is about 2 dB.

Aligned nanowire growth using lithography-assisted bonding of a polycarbonate template for neural probe electrodes

International Nuclear Information System (INIS)

Yoon, Hargsoon; Deshpande, Devesh C; Ramachandran, Vasuda; Varadan, Vijay K

2008-01-01

This research presents a fabrication method of vertically aligned nanowires on substrates using lithography-assisted template bonding (LATB) towards developing highly efficient electrodes for biomedical applications at low cost. A polycarbonate template containing cylindrical nanopores is attached to a substrate and the nanopores are selectively opened with a modified lithography process. Vertically aligned nanowires are grown by electrochemical deposition through these open pores on polyimide film and silicon substrates. The process of opening the nanopores is optimized to yield uniform growth of nanowires. The morphological, crystalline, and electrochemical properties of the resulting vertically aligned nanowires are discussed using scanning electron microscopy (SEM), x-ray diffraction (XRD), and electrochemical analysis tools. The potential application of this simple and inexpensive fabrication technology is discussed in the development of neural probe electrodes

Imagining the prototype

OpenAIRE

Brouwer, C. E.; Bhomer, ten, M.; Melkas, H.; Buur, J.

2013-01-01

This article reports on the analysis of a design session, employing conversation analysis. In the design session three experts and a designer discuss a prototype of a shirt, which has been developed with the input from these experts. The analysis focuses on the type of involvement of the participants with the prototype and how they explicate the points they make in the discussion with or without making use of the prototype. Three techniques for explicating design issues that exploit the proto...

Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography

Science.gov (United States)

Kozawa, Takahiro; Oizumi, Hiroaki; Itani, Toshiro; Tagawa, Seiichi

2010-11-01

The development of extreme ultraviolet (EUV) lithography has progressed owing to worldwide effort. As the development status of EUV lithography approaches the requirements for the high-volume production of semiconductor devices with a minimum line width of 22 nm, the extraction of resist parameters becomes increasingly important from the viewpoints of the accurate evaluation of resist materials for resist screening and the accurate process simulation for process and mask designs. In this study, we demonstrated that resist parameters (namely, quencher concentration, acid diffusion constant, proportionality constant of line edge roughness, and dissolution point) can be extracted from the scanning electron microscopy (SEM) images of patterned resists without the knowledge on the details of resist contents using two types of latest EUV resist.

Imprint lithography provides topographical nanocues to guide cell growth in primary cortical cell culture

NARCIS (Netherlands)

Xie, S.; Luttge, R.

2014-01-01

In this paper, we describe a technology platform to study the effect of nanocues on the cell growth direction in primary cortical cell culture. Topographical cues to cells are provided using nanoscale features created by Jet and Flash Imprint Lithography, coated with polyethylenimine. We

75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

Science.gov (United States)

2010-07-27

... Advanced Lithography Techniques and Products Containing Same; Notice of Investigation AGENCY: U.S... violations of section 337 based upon the importation into the United States, the sale for importation, and the sale within the United States after importation of certain semiconductor products made by advanced...

Masks for extreme ultraviolet lithography

International Nuclear Information System (INIS)

Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y.

1998-01-01

In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed

Supporting Active User Involvment in Prototyping

DEFF Research Database (Denmark)

Grønbæk, Kaj

1990-01-01

The term prototyping has in recent years become a buzzword in both research and practice of system design due to a number of claimed advantages of prototyping techniques over traditional specification techniques. In particular it is often stated that prototyping facilitates the users' involvement...... in the development process. But prototyping does not automatically imply active user involvement! Thus a cooperative prototyping approach aiming at involving users actively and creatively in system design is proposed in this paper. The key point of the approach is to involve users in activities that closely couple...... development of prototypes to early evaluation of prototypes in envisioned use situations. Having users involved in such activities creates new requirements for tool support. Tools that support direct manipulation of prototypes and simulation of behaviour have shown promise for cooperative prototyping...

Engineering prototypes for theta-pinch devices

International Nuclear Information System (INIS)

Hansborough, L.D.; Hammer, C.F.; Hanks, K.W.; McDonald, T.E.; Nunnally, W.C.

1975-01-01

Past, present, and future engineering prototypes for theta-pinch plasma-physics devices at Los Alamos Scientific Laboratory are discussed. Engineering prototypes are designed to test and evaluate all components under system conditions expected on actual plasma-physics experimental devices. The importance of engineering prototype development increases as the size and complexity of the plasma-physics device increases. Past experiences with the Scyllac prototype and the Staged Theta-Pinch prototype are discussed and evaluated. The design of the proposed Staged Scyllac prototype and the Large Staged Scyllac implosion prototype assembly are discussed

Studies on applications of functional organic-thin-films for lithography on semiconductor device production

International Nuclear Information System (INIS)

Ogawa, Kazufumi

1988-12-01

This report describes some experimental results of studies in an attempt to contribute to the development of ultra-fine lithography which is used for the manufacture of semiconductor devices with design rule below 0.5 μm, and contains (1) manufacture of the exposure apparatus, (2) establishment of the resist process technology, and (3) preparation of the resist materials. The author designed and manufactured the KrF excimer laser stepper which is supposed to be most promising for practical uses. In the resist processing technology, the water-soluble contrast enhanced lithography (CEL) process was developed and this process has advantages is that high pattern contrast and large focus depth latitude were easily obtained. Finally, for resist materials, use of Langmuir-Blodgett (LB) films was investigated since the LB technique provides the method to prepare extremely thin organic films which are uniform in molecular level, and the reaction mechanism of the LB films of unsaturated compounds under irradiation with high energy beams was elucidated. (author)

X-ray lithography for micro- and nano-fabrication at ELETTRA for interdisciplinary applications

International Nuclear Information System (INIS)

Di Fabrizio, E; Fillipo, R; Cabrini, S

2004-01-01

ELETTRA (http://www.elettra.trieste.it/index.html) is a third generation synchrotron radiation source facility operating at Trieste, Italy, and hosts a wide range of research activities in advanced materials analysis and processing, biology and nano-science at several various beam lines. The energy spectrum of ELETTRA allows x-ray nano-lithography using soft (1.5 keV) and hard x-ray (10 keV) wavelengths. The Laboratory for Interdisciplinary Lithography (LIILIT) was established in 1998 as part of an Italian national initiative on micro- and nano-technology project of INFM and is funded and supported by the Italian National Research Council (CNR), INFM and ELETTRA. LILIT had developed two dedicated lithographic beam lines for soft (1.5 keV) and hard x-ray (10 keV) for micro- and nano-fabrication activities for their applications in engineering, science and bio-medical applications. In this paper, we present a summary of our research activities in micro- and nano-fabrication involving x-ray nanolithography at LILIT's soft and hard x-ray beam lines

X-ray lithography source (SXLS) vacuum system

International Nuclear Information System (INIS)

Schuchman, J.C.; Aloia, J.; Hsieh, H.; Kim, T.; Pjerov, S.

1989-01-01

In 1988 Brookhaven National Laboratory (BNL) was awarded a contract to design and construct a compact light source for x-ray lithography. This award is part of a technology transfer-to-American-industry program. The contract is for an electron storage ring designed for 690 MeV-500 ma operations. It has a racetrack configuration with a circumference to 8.5 meters. The machine is to be constructed in two phases. Phase I (200 MeV-500ma) will primarily be for low energy injection studies and will incorporate all room temperature magnets. For Phase II the two room temperature dipole magnets will be replaced with (4T) superconducting magnets and operation will be at 690 MeV. This paper describes the vacuum system for this machine. 9 refs

EPCiR prototype

DEFF Research Database (Denmark)

2003-01-01

A prototype of a residential pervasive computing platform based on OSGi involving among other a mock-up of an health care bandage.......A prototype of a residential pervasive computing platform based on OSGi involving among other a mock-up of an health care bandage....

Selective binding of oligonucleotide on TiO2 surfaces modified by swift heavy ion beam lithography

International Nuclear Information System (INIS)

Vicente Pérez-Girón, J.; Hirtz, M.; McAtamney, C.; Bell, A.P.; Antonio Mas, J.; Jaafar, M.; Luis, O. de; Fuchs, H.

2014-01-01

We have used swift heavy-ion beam based lithography to create patterned bio-functional surfaces on rutile TiO 2 single crystals. The applied lithography method generates a permanent and well defined periodic structure of micrometre sized square holes having nanostructured TiO 2 surfaces, presenting different physical and chemical properties compared to the surrounding rutile single crystal surface. On the patterned substrates selective binding of oligonucleotides molecules is possible at the surfaces of the holes. This immobilisation process is only being controlled by UV light exposure. The patterned transparent substrates are compatible with fluorescence detection techniques, are mechanically robust, have a high tolerance to extreme chemical and temperature environments, and apparently do not degrade after ten cycles of use. These qualities make the patterned TiO 2 substrates useful for potential biosensor applications

Probing Leader Cells in Endothelial Collective Migration by Plasma Lithography Geometric Confinement

OpenAIRE

Yongliang Yang; Nima Jamilpour; Baoyin Yao; Zachary S. Dean; Reza Riahi; Pak Kin Wong

2016-01-01

When blood vessels are injured, leader cells emerge in the endothelium to heal the wound and restore the vasculature integrity. The characteristics of leader cells during endothelial collective migration under diverse physiological conditions, however, are poorly understood. Here we investigate the regulation and function of endothelial leader cells by plasma lithography geometric confinement generated. Endothelial leader cells display an aggressive phenotype, connect to follower cells via pe...

Fast-prototyping of VLSI

International Nuclear Information System (INIS)

Saucier, G.; Read, E.

1987-01-01

Fast-prototyping will be a reality in the very near future if both straightforward design methods and fast manufacturing facilities are available. This book focuses, first, on the motivation for fast-prototyping. Economic aspects and market considerations are analysed by European and Japanese companies. In the second chapter, new design methods are identified, mainly for full custom circuits. Of course, silicon compilers play a key role and the introduction of artificial intelligence techniques sheds a new light on the subject. At present, fast-prototyping on gate arrays or on standard cells is the most conventional technique and the third chapter updates the state-of-the art in this area. The fourth chapter concentrates specifically on the e-beam direct-writing for submicron IC technologies. In the fifth chapter, a strategic point in fast-prototyping, namely the test problem is addressed. The design for testability and the interface to the test equipment are mandatory to fulfill the test requirement for fast-prototyping. Finally, the last chapter deals with the subject of education when many people complain about the lack of use of fast-prototyping in higher education for VLSI

Nanostructured Polymer Brushes by UV-Assisted Imprint Lithography and Surface-Initiated Polymerization for Biological Functions

NARCIS (Netherlands)

Benetti, Edmondo Maria; Acikgoz, C.; Sui, Xiaofeng; Vratzov, Boris; Hempenius, Mark A.; Huskens, Jurriaan; Vancso, Gyula J.

2011-01-01

Functional polymer brush nanostructures are obtained by combining step-and-flash imprint lithography (SFIL) with controlled, surface-initiated polymerization (CSIP). Patterning is achieved at length scales such that the smallest elements have dimensions in the sub-100 nm range. The patterns exhibit

Accelerated yield learning in agressive lithography

Science.gov (United States)

Monahan, Kevin M.; Ashkenaz, Scott M.; Chen, Xing; Lord, Patrick J.; Merrill, Mark A.; Quattrini, Rich; Wiley, James N.

2000-06-01

As exposure wavelengths decrease from 248 nm to 193, 157, and even 13 nm (EUV), small process defects can cause collapse of the lithographic process window near the limits of resolution, particularly for the gate and contact structures in high- performance devices. Such sensitivity poses a challenge for lithography process module control. In this work, we show that yield loss can be caused by a combination of macro, micro, CD, and overlay defects. A defect is defined as any yield- affecting process variation. Each defect, regardless of cause, is assumed to have a specific 'kill potential.' The accuracy of the lithographic yield model can be improved by identifying those defects with the highest kill potential or, more importantly, those that pose the highest economic risk. Such economic considerations have led us to develop a simple heuristic model for understanding sampling strategies in defect metrology and for linking metrology capability to yield and profitability.

Prototypes as Platforms for Participation

DEFF Research Database (Denmark)

Horst, Willem

developers, and design it accordingly. Designing a flexible prototype in combination with supportive tools to be used by both interaction designers and non-designers during development is introduced as a way to open up the prototyping process to these users. Furthermore I demonstrate how such a flexible...... on prototyping, by bringing to attention that the prototype itself is an object of design, with its users and use context, which deserves further attention. Moreover, in this work I present concrete tools and methods that can be used by interaction designers in practice. As such this work addresses both......The development of interactive products in industry is an activity involving different disciplines – such as different kinds of designers, engineers, marketers and managers – in which prototypes play an important role. On the one hand, prototypes can be powerful boundary objects and an effective...

Application of high-resolution film for lithography to synchrotron X-ray topography

International Nuclear Information System (INIS)

Mizuno, Kaoru; Ito, Kazuyoshi; Iwami, Masayuki; Hashimoto, Eiji; Kino, Takao.

1994-01-01

A high-resolution film for lithography is applied to a detector for synchrotron radiation topography, instead of a nuclear plate. The film shows much better resolution than that of the plate although exposure time an about 500 times longer is required. The size distribution of interstitial loops grown as vacancy sources in a nearly perfect aluminum crystal after a temperature rise is examined from the while beam topograph. (author)

New non-chemically amplified molecular resist design with switchable sensitivity for multi-lithography applications and nanopatterning

Science.gov (United States)

Thakur, Neha; Guruprasad Reddy, Pulikanti; Nandi, Santu; Yogesh, Midathala; Sharma, Satinder K.; Pradeep, Chullikkattil P.; Ghosh, Subrata; Gonsalves, Kenneth E.

2017-12-01

The development of new photoresist materials for multi-lithography applications is crucial but a challenging task for semiconductor industries. During the last few decades, given the need for new resists to meet the requirements of semiconductor industries, several research groups have developed different resist materials for specific lithography applications. In this context, we have successfully synthesized a new molecular non-chemically amplified resist (n-CAR) (C3) based on the functionalization of aromatic hydroxyl core (4,4‧-(9H-fluorene-9,9-diyl)diphenol) with radiation sensitive sulfonium triflates for various lithography applications. While, micron scale features have been developed using i-line (365 nm) and DUVL (254 nm) exposure tools, electron beam studies on C3 thin films enabled us to pattern 20 nm line features with L/3S (line/space) characteristics on the silicon substrate. The sensitivity and contrast were calculated from the contrast curve analysis as 280 µC cm-2 and 0.025 respectively. Being an important parameter for any newly developed resists, the line edge roughness (LER) of 30 nm (L/5S) features were calculated, using SUMMIT metrology package, to be 3.66  ±  0.3 nm and found to be within the acceptable range. AFM analysis further confirmed 20 nm line width with smooth pattern wall. No deformation of patterned features was observed during AFM analysis which indicated good adhesion property between patterned resists and silicon substrates.

High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography

Science.gov (United States)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2015-03-01

We investigated the eco-friendly electron beam (EB) and extreme-ultraviolet (EUV) lithography using a high-sensitive negative type of green resist material derived from biomass to take advantage of organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of TMAH. The material design concept to use the water-soluble resist material with acceptable properties such as pillar patterns with less than 100 nm in high EB sensitivity of 10 μC/cm2 and etch selectivity with a silicon-based middle layer in CF4 plasma treatment was demonstrated for EB and EUV lithography.

Application of rapid prototyping technology in the prototype manufacturing for evaluation of NPP components and equipments

International Nuclear Information System (INIS)

Park, C. Y.; Kim, J. W.; Shon, H. K.; Choi, H. S.; Yang, D. Y.

2001-01-01

A brief overview of rapid prototyping technology in which a part with complex shape can be produced easily and rapidly in a layer-by-layer additive manner is given in this article. In addition, a prototype model of a complex fan is manufactured using three-dimensional solid CAD modeling and Laminated Object Manufacturing (LOM), a rapid prototyping technology. This enables designers to verify and modify design rapidly at an early stage of product development; and the prototype model of a fan can be used as a pattern for various secondary casting process such as vacumm casting, lost-paper casting to make prototypes of a fan. It has been shown that the combination of three-dimensional solid CAD modeling and rapid prototyping technology can reduce greatly the cost and time of prototyping of fans and turbine blades in comparison with conventional CNC machining. It should also be noted that rapid prototyping technology enables the visualization of various physical and chemical defects at a nuclear power plant so that it can help engineers understand those defects in an effective way

Compact 13.5-nm free-electron laser for extreme ultraviolet lithography

Directory of Open Access Journals (Sweden)

Y. Socol

2011-04-01

Full Text Available Optical lithography has been actively used over the past decades to produce more and more dense integrated circuits. To keep with the pace of the miniaturization, light of shorter and shorter wavelength was used with time. The capabilities of the present 193-nm UV photolithography were expanded time after time, but it is now believed that further progress will require deployment of extreme ultraviolet (EUV lithography based on the use of 13.5-nm radiation. However, presently no light source exists with sufficient average power to enable high-volume manufacturing. We report here the results of a study that shows the feasibility of a free-electron laser EUV source driven by a multiturn superconducting energy-recovery linac (ERL. The proposed 40×20  m^{2} facility, using MW-scale consumption from the power grid, is estimated to provide about 5 kW of average EUV power. We elaborate the self-amplified spontaneous emission (SASE option, which is presently technically feasible. A regenerative-amplifier option is also discussed. The proposed design is based on a short-period (2–3 cm undulator. The corresponding electron beam energy is about 0.5–1.0 GeV. The proposed accelerator consists of a photoinjector, a booster, and a multiturn ERL.

Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

Science.gov (United States)

Mohammed, Mohammed Ziauddin; Mourad, Abdel-Hamid I.; Khashan, Saud A.

2018-06-01

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

Science.gov (United States)

Mohammed, Mohammed Ziauddin; Mourad, Abdel-Hamid I.; Khashan, Saud A.

2018-04-01

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

A prototype analysis of vengeance

NARCIS (Netherlands)

Elshout, Maartje; Nelissen, Rob; van Beest, Ilja

2015-01-01

The authors examined the concept of vengeance from a prototype perspective. In 6 studies, the prototype structure of vengeance was mapped. Sixty-nine features of vengeance were identified (Study 1), and rated on centrality (Study 2). Further studies confirmed the prototype structure. Compared to

Review on CNC-Rapid Prototyping

International Nuclear Information System (INIS)

M Nafis O Z; Nafrizuan M Y; Munira M A; Kartina J

2012-01-01

This article reviewed developments of Computerized Numerical Control (CNC) technology in rapid prototyping process. Rapid prototyping (RP) can be classified into three major groups; subtractive, additive and virtual. CNC rapid prototyping is grouped under the subtractive category which involves material removal from the workpiece that is larger than the final part. Richard Wysk established the use of CNC machines for rapid prototyping using sets of 2½-D tool paths from various orientations about a rotary axis to machine parts without refixturing. Since then, there are few developments on this process mainly aimed to optimized the operation and increase the process capabilities to stand equal with common additive type of RP. These developments include the integration between machining and deposition process (hybrid RP), adoption of RP to the conventional machine and optimization of the CNC rapid prototyping process based on controlled parameters. The article ended by concluding that the CNC rapid prototyping research area has a vast space for improvement as in the conventional machining processes. Further developments and findings will enhance the usage of this method and minimize the limitation of current approach in building a prototype.

Application status and prospect of X-ray lithography technology

International Nuclear Information System (INIS)

Xie Changqing; Chen Dapeng; Liu Ming; Ye Tianchun; Yi Futing

2004-01-01

Because of its many merits, such as high resolution, large depth of focus, large field size, high throughput, large process latitude, easy extendibility to 50 nm and below ground rule, and so on, the Proximity X-ray Lithography (PXL) is very attractive for the 100 nm and smaller ground rule integrated circuit manufacturing. In this paper, the international research and development status of PXL is briefly introduced firstly, and both its application status and prospect in nanoelectronics research, Monolithic Microwave Integrated Circuits (MMIC) production and silicon-based Ultra Large Scale Integrated Circuits (ULSIC) production are described, and the recent research progress in home PXL is also presented briefly. (authors)

Estimation and control of large-scale systems with an application to adaptive optics for EUV lithography

NARCIS (Netherlands)

Haber, A.

2014-01-01

Extreme UltraViolet (EUV) lithography is a new technology for production of integrated circuits. In EUV lithographic machines, optical elements are heated by absorption of exposure energy. Heating induces thermoelastic deformations of optical elements and consequently, it creates wavefront

Double-layer imprint lithography on wafers and foils from the submicrometer to the millimeter scale

NARCIS (Netherlands)

Moonen, P.F.; Yakimets, I.; Peter, M.; Meinders, E.R.; Huskens, J.

2011-01-01

In this paper, a thermal imprint technique, double-layer nanoimprint lithography (dlNIL), is introduced, allowing complete filling of features in the dimensional range of submicrometer to millimeter. The imprinting and filling quality of dlNIL was studied on Si substrates as a model system and

Fabrication of sub-micrometric metallic hollow-core structures by laser interference lithography

International Nuclear Information System (INIS)

Pérez, Noemí; Tavera, Txaber; Rodríguez, Ainara; Ellman, Miguel; Ayerdi, Isabel; Olaizola, Santiago M.

2012-01-01

Highlights: ► Arrays of hollow-core sub-micrometric structures are fabricated. ► Laser interference lithography is used for the pattering of the resist sacrificial layer. ► The removal of the sacrificial layer gives rise to metallic channels with a maximum crosssectional area of 0.1 μm 2 . ► These structures can be used in nanofluidics. - Abstract: This work presents the fabrication of hollow-core metallic structures with a complete laser interference lithography (LIL) process. A negative photoresist is used as sacrificial layer. It is exposed to the pattern resulting from the interference of two laser beams, which produces a structure of photoresist lines with a period of 600 nm. After development of the resist, platinum is deposited on the samples by DC sputtering and the resist is removed with acetone. The resulting metallic structures consist in a continuous platinum film that replicates the photoresist relief with a hollow core. The cross section of the channels is up to 0.1 μm 2 . The fabricated samples are characterized by FESEM and FIB. This last tool helps to provide a clear picture of the shape and size of the channels. Conveniently dimensioned, this array of metallic submicrometric channels can be used in microfluidic or IC cooling applications.

Rapid manufacturing of low-noise membranes for nanopore sensors by trans-chip illumination lithography

International Nuclear Information System (INIS)

Janssen, Xander J A; Jonsson, Magnus P; Plesa, Calin; Soni, Gautam V; Dekker, Cees; Dekker, Nynke H

2012-01-01

In recent years, the concept of nanopore sensing has matured from a proof-of-principle method to a widespread, versatile technique for the study of biomolecular properties and interactions. While traditional nanopore devices based on a nanopore in a single layer membrane supported on a silicon chip can be rapidly fabricated using standard microfabrication methods, chips with additional insulating layers beyond the membrane region can provide significantly lower noise levels, but at the expense of requiring more costly and time-consuming fabrication steps. Here we present a novel fabrication protocol that overcomes this issue by enabling rapid and reproducible manufacturing of low-noise membranes for nanopore experiments. The fabrication protocol, termed trans-chip illumination lithography, is based on illuminating a membrane-containing wafer from its backside such that a photoresist (applied on the wafer’s top side) is exposed exclusively in the membrane regions. Trans-chip illumination lithography permits the local modification of membrane regions and hence the fabrication of nanopore chips containing locally patterned insulating layers. This is achieved while maintaining a well-defined area containing a single thin membrane for nanopore drilling. The trans-chip illumination lithography method achieves this without relying on separate masks, thereby eliminating time-consuming alignment steps as well as the need for a mask aligner. Using the presented approach, we demonstrate rapid and reproducible fabrication of nanopore chips that contain small (12 μm × 12 μm) free-standing silicon nitride membranes surrounded by insulating layers. The electrical noise characteristics of these nanopore chips are shown to be superior to those of simpler designs without insulating layers and comparable in quality to more complex designs that are more challenging to fabricate. (paper)

Prototyping in theory and in practice

DEFF Research Database (Denmark)

Yu, Fei; Brem, Alexander; Pasinell, Michele

2018-01-01

and functions of a prototype and needed to meet specific goals in order to push the process forward. Designers, on the other hand, used prototypes to investigate the design space for new possibilities, and were more open to a variety of prototyping materials and tools, especially for low-fidelity prototypes...

Process strategies for ultra-deep x-ray lithography at the Advanced Photon Source

International Nuclear Information System (INIS)

Mancini, D.C.; Moldovan, N.; Divan, R.; De Carlo, F.; Yaeger, J.

2001-01-01

For the past five years, we have been investigating and advancing processing capabilities for deep x-ray lithography (DXRL) using synchrotron radiation from a bending magnet at the Advanced Photon Source (APS), with an emphasis on ultra-deep structures (1mm to 1cm thick). The use of higher-energy x-rays has presented many challenges in developing optimal lithographic techniques for high-aspect ratio structures: mask requirements, resist preparation, exposure, development, and post-processing. Many problems are more severe for high-energy exposure of thicker films than for sub-millimeter structures and affect resolution, processing time, adhesion, damage, and residue. A number of strategies have been created to overcome the challenges and limitations of ultra-deep x-ray lithography (UDXRL), that have resulted in the current choices for mask, substrate, and process flow at the APS. We describe our current process strategies for UDXRL, how they address the challenges presented, and their current limitations. We note especially the importance of the process parameters for use of the positive tone resist PMMA for UDXRL, and compare to the use of negative tone resists such as SU-8 regarding throughput, resolution, adhesion, damage, and post-processing.

Fabrication of superconducting MgB2 nanostructures by an electron beam lithography-based technique

Science.gov (United States)

Portesi, C.; Borini, S.; Amato, G.; Monticone, E.

2006-03-01

In this work, we present the results obtained in fabrication and characterization of magnesium diboride nanowires realized by an electron beam lithography (EBL)-based method. For fabricating MgB2 thin films, an all in situ technique has been used, based on the coevaporation of B and Mg by means of an e-gun and a resistive heater, respectively. Since the high temperatures required for the fabrication of good quality MgB2 thin films do not allow the nanostructuring approach based on the lift-off technique, we structured the samples combining EBL, optical lithography, and Ar milling. In this way, reproducible nanowires 1 μm long have been obtained. To illustrate the impact of the MgB2 film processing on its superconducting properties, we measured the temperature dependence of the resistance on a nanowire and compared it to the original magnesium diboride film. The electrical properties of the films are not degraded as a consequence of the nanostructuring process, so that superconducting nanodevices may be obtained by this method.

Surface-enhanced Raman scattering active gold nanoparticle/nanohole arrays fabricated through electron beam lithography

Science.gov (United States)

Wu, Tsunghsueh; Lin, Yang-Wei

2018-03-01

Effective surface-enhanced Raman scattering (SERS)-active substrates from gold nanoparticle and gold nanohole arrays were successfully fabricated through electron beam lithography with precise computer-aided control of the unit size and intergap distance. Their SERS performance was evaluated using 4-mercaptobenzoic acid (4-MBA). These gold arrays yielded strong SERS signals under 785 nm laser excitation. The enhancement factors for 4-MBA molecules on the prepared gold nanoparticle and nanohole arrays maxed at 1.08 × 107 and 8.61 × 106, respectively. The observed increase in SERS enhancement was attributed to the localized surface plasmon resonance (LSPR) wavelength shifting toward the near-infrared regime when the gold nanohole diameter increased, in agreement with the theoretical prediction in this study. The contribution of LSPR to the Raman enhancement from nanohole arrays deposited on fluorine-doped tin oxide glass was elucidated by comparing SERS and transmission spectra. This simple fabrication procedure, which entails employing electron beam lithography and the controllability of the intergap distance, suggests highly promising uses of nanohole arrays as functional components in sensing and photonic devices.

Scalable fabrication of strongly textured organic semiconductor micropatterns by capillary force lithography.

Science.gov (United States)

Jo, Pil Sung; Vailionis, Arturas; Park, Young Min; Salleo, Alberto

2012-06-26

Strongly textured organic semiconductor micropatterns made of the small molecule dioctylbenzothienobenzothiophene (C(8)-BTBT) are fabricated by using a method based on capillary force lithography (CFL). This technique provides the C(8)-BTBT solution with nucleation sites for directional growth, and can be used as a scalable way to produce high quality crystalline arrays in desired regions of a substrate for OFET applications. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mobile prototyping with Axure 7

CERN Document Server

Hacker, Will

2013-01-01

This book is a step-by-step tutorial which includes hands-on examples and downloadable Axure files to get you started with mobile prototyping immediately. You will learn how to develop an application from scratch, and will be guided through each and every step.If you are a mobile-centric developer/designer, or someone who would like to take their Axure prototyping skills to the next level and start designing and testing mobile prototypes, this book is ideal for you. You should be familiar with prototyping and Axure specifically, before you read this book.

Prototype-Incorporated Emotional Neural Network.

Science.gov (United States)

Oyedotun, Oyebade K; Khashman, Adnan

2017-08-15

Artificial neural networks (ANNs) aim to simulate the biological neural activities. Interestingly, many ''engineering'' prospects in ANN have relied on motivations from cognition and psychology studies. So far, two important learning theories that have been subject of active research are the prototype and adaptive learning theories. The learning rules employed for ANNs can be related to adaptive learning theory, where several examples of the different classes in a task are supplied to the network for adjusting internal parameters. Conversely, the prototype-learning theory uses prototypes (representative examples); usually, one prototype per class of the different classes contained in the task. These prototypes are supplied for systematic matching with new examples so that class association can be achieved. In this paper, we propose and implement a novel neural network algorithm based on modifying the emotional neural network (EmNN) model to unify the prototype- and adaptive-learning theories. We refer to our new model as ``prototype-incorporated EmNN''. Furthermore, we apply the proposed model to two real-life challenging tasks, namely, static hand-gesture recognition and face recognition, and compare the result to those obtained using the popular back-propagation neural network (BPNN), emotional BPNN (EmNN), deep networks, an exemplar classification model, and k-nearest neighbor.

Selective Etching via Soft Lithography of Conductive Multilayered Gold Films with Analysis of Electrolyte Solutions

Science.gov (United States)

Gerber, Ralph W.; Oliver-Hoyo, Maria T.

2008-01-01

This experiment is designed to expose undergraduate students to the process of selective etching by using soft lithography and the resulting electrical properties of multilayered films fabricated via self-assembly of gold nanoparticles. Students fabricate a conductive film of gold on glass, apply a patterned resist using a polydimethylsiloxane…

Prototype Effect and the Persuasiveness of Generalizations.

Science.gov (United States)

Dahlman, Christian; Sarwar, Farhan; Bååth, Rasmus; Wahlberg, Lena; Sikström, Sverker

An argument that makes use of a generalization activates the prototype for the category used in the generalization. We conducted two experiments that investigated how the activation of the prototype affects the persuasiveness of the argument. The results of the experiments suggest that the features of the prototype overshadow and partly overwrite the actual facts of the case. The case is, to some extent, judged as if it had the features of the prototype instead of the features it actually has. This prototype effect increases the persuasiveness of the argument in situations where the audience finds the judgment more warranted for the prototype than for the actual case (positive prototype effect), but decreases persuasiveness in situations where the audience finds the judgment less warranted for the prototype than for the actual case (negative prototype effect).

Formation of isolated carbon nanofibers with hot-wire CVD using nanosphere lithography as catalyst patterning technique

NARCIS (Netherlands)

Houweling, Z.S.; Verlaan, V.; ten Grotenhuis, G.T.; Schropp, R.E.I.

2008-01-01

Recently the site-density control of carbon nanotubes (CNTs) has attracted much attention as this has become critical for its many applications. To obtain an ordered array of catalyst nanoparticles with good monodispersity nanosphere lithography (NSL) is used. These nanoparticles are tested as

Compact electron storage ring JESCOS with normalconducting or superconducting magnets for X-ray lithography

International Nuclear Information System (INIS)

Anton, F.; Klein, U.; Krischel, D.; Anderberg, B.

1992-01-01

The layouts of a normal conducting electron storage ring and a storage ring with superconducting bending magnets are presented. The storage rings have a critical wavelength of 1 nm and are designed as compact sources for X-ray lithography. Each ring fits into a shielded room with a diameter of 14 m. (author) 3 refs.; 5 figs.; 1 tab

Fabrication of hexagonal star-shaped and ring-shaped patterns arrays by Mie resonance sphere-lens-lithography

Science.gov (United States)

Liu, Xianchao; Wang, Jun; Li, Ling; Gou, Jun; Zheng, Jie; Huang, Zehua; Pan, Rui

2018-05-01

Mie resonance sphere-lens-lithography has proved to be a good candidate for fabrication of large-area tunable surface nanopattern arrays. Different patterns on photoresist surface are obtained theoretically by adjusting optical coupling among neighboring spheres with different gap sizes. The effect of light reflection from the substrate on the pattern produced on the photoresist with a thin thickness is also discussed. Sub-micron hexagonal star-shaped and ring-shaped patterns arrays are achieved with close-packed spheres arrays and spheres arrays with big gaps, respectively. Changing of star-shaped vertices is induced by different polarization of illumination. Experimental results agree well with the simulation. By using smaller resonance spheres, sub-400 nm star-shaped and ring-shaped patterns can be realized. These tunable patterns are different from results of previous reports and have enriched pattern morphology fabricated by sphere-lens-lithography, which can find application in biosensor and optic devices.

Merging Bottom-Up with Top-Down: Continuous Lamellar Networks and Block Copolymer Lithography

Science.gov (United States)

Campbell, Ian Patrick

Block copolymer lithography is an emerging nanopatterning technology with capabilities that may complement and eventually replace those provided by existing optical lithography techniques. This bottom-up process relies on the parallel self-assembly of macromolecules composed of covalently linked, chemically distinct blocks to generate periodic nanostructures. Among the myriad potential morphologies, lamellar structures formed by diblock copolymers with symmetric volume fractions have attracted the most interest as a patterning tool. When confined to thin films and directed to assemble with interfaces perpendicular to the substrate, two-dimensional domains are formed between the free surface and the substrate, and selective removal of a single block creates a nanostructured polymeric template. The substrate exposed between the polymeric features can subsequently be modified through standard top-down microfabrication processes to generate novel nanostructured materials. Despite tremendous progress in our understanding of block copolymer self-assembly, continuous two-dimensional materials have not yet been fabricated via this robust technique, which may enable nanostructured material combinations that cannot be fabricated through bottom-up methods. This thesis aims to study the effects of block copolymer composition and processing on the lamellar network morphology of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) and utilize this knowledge to fabricate continuous two-dimensional materials through top-down methods. First, block copolymer composition was varied through homopolymer blending to explore the physical phenomena surrounding lamellar network continuity. After establishing a framework for tuning the continuity, the effects of various processing parameters were explored to engineer the network connectivity via defect annihilation processes. Precisely controlling the connectivity and continuity of lamellar networks through defect engineering and

Project management strategies for prototyping breakdowns

DEFF Research Database (Denmark)

Granlien, Maren Sander; Pries-Heje, Jan; Baskerville, Richard

2009-01-01

, managing the explorative and iterative aspects of prototyping projects is not a trivial task. We examine the managerial challenges in a small scale prototyping project in the Danish healthcare sector where a prototype breakdown and project escalation occurs. From this study we derive a framework...... of strategies for coping with escalation in troubled prototyping projects; the framework is based on project management triangle theory and is useful when considering how to manage prototype breakdown and escalation. All strategies were applied in the project case at different points in time. The strategies led...

Wafer Surface Charge Reversal as a Method of Simplifying Nanosphere Lithography for Reactive Ion Etch Texturing of Solar Cells

Directory of Open Access Journals (Sweden)

Daniel Inns

2007-01-01

Full Text Available A simplified nanosphere lithography process has been developed which allows fast and low-waste maskings of Si surfaces for subsequent reactive ion etching (RIE texturing. Initially, a positive surface charge is applied to a wafer surface by dipping in a solution of aluminum nitrate. Dipping the positive-coated wafer into a solution of negatively charged silica beads (nanospheres results in the spheres becoming electrostatically attracted to the wafer surface. These nanospheres form an etch mask for RIE. After RIE texturing, the reflection of the surface is reduced as effectively as any other nanosphere lithography method, while this batch process used for masking is much faster, making it more industrially relevant.

Rapid fabrication of microneedles using magnetorheological drawing lithography.

Science.gov (United States)

Chen, Zhipeng; Ren, Lei; Li, Jiyu; Yao, Lebin; Chen, Yan; Liu, Bin; Jiang, Lelun

2018-01-01

Microneedles are micron-sized needles that are widely applied in biomedical fields owing to their painless, minimally invasive, and convenient operation. However, most microneedle fabrication approaches are costly, time consuming, involve multiple steps, and require expensive equipment. In this study, we present a novel magnetorheological drawing lithography (MRDL) method to efficiently fabricate microneedle, bio-inspired microneedle, and molding-free microneedle array. With the assistance of an external magnetic field, the 3D structure of a microneedle can be directly drawn from a droplet of curable magnetorheological fluid. The formation process of a microneedle consists of two key stages, elasto-capillary self-thinning and magneto-capillary self-shrinking, which greatly affect the microneedle height and tip radius. Penetration and fracture tests demonstrated that the microneedle had sufficient strength and toughness for skin penetration. Microneedle arrays and a bio-inspired microneedle were also fabricated, which further demonstrated the versatility and flexibility of the MRDL method. Microneedles have been widely applied in biomedical fields owing to their painless, minimally invasive, and convenient operation. However, most microneedle fabrication approaches are costly, time consuming, involve multiple steps, and require expensive equipment. Furthermore, most researchers have focused on the biomedical applications of microneedles but have given little attention to the optimization of the fabrication process. This research presents a novel magnetorheological drawing lithography (MRDL) method to fabricate microneedle, bio-inspired microneedle, and molding-free microneedle array. In this proposed technique, a droplet of curable magnetorheological fluid (CMRF) is drawn directly from almost any substrate to produce a 3D microneedle under an external magnetic field. This method not only inherits the advantages of thermal drawing approach without the need for a mask

Specifications in software prototyping

OpenAIRE

Luqi; Chang, Carl K.; Zhu, Hong

1998-01-01

We explore the use of software speci®cations for software prototyping. This paper describes a process model for software prototyping, and shows how specifications can be used to support such a process via a cellular mobile phone switch example.

Courthouse Prototype Building

Energy Technology Data Exchange (ETDEWEB)

Malhotra, Mini [ORNL; New, Joshua Ryan [ORNL; Im, Piljae [ORNL

2018-02-01

As part of DOE's support of ANSI/ASHRAE/IES Standard 90.1 and IECC, researchers at Pacific Northwest National Laboratory (PNNL) apply a suite of prototype buildings covering 80% of the commercial building floor area in the U.S. for new construction. Efforts have started on expanding the prototype building suite to cover 90% of the commercial building floor area in the U.S., by developing prototype models for additional building types including place of worship, public order and safety, public assembly. Courthouse is courthouse is a sub-category under the “Public Order and Safety" building type category; other sub-categories include police station, fire station, and jail, reformatory or penitentiary.ORNL used building design guides, databases, and documented courthouse projects, supplemented by personal communication with courthouse facility planning and design experts, to systematically conduct research on the courthouse building and system characteristics. This report documents the research conducted for the courthouse building type and proposes building and system characteristics for developing a prototype building energy model to be included in the Commercial Building Prototype Model suite. According to the 2012 CBECS, courthouses occupy a total of 436 million sqft of floor space or 0.5% of the total floor space in all commercial buildings in the US, next to fast food (0.35%), grocery store or food market (0.88%), and restaurant or cafeteria (1.2%) building types currently included in the Commercial Prototype Building Model suite. Considering aggregated average, courthouse falls among the larger with a mean floor area of 69,400 sqft smaller fuel consumption intensity building types and an average of 94.7 kBtu/sqft compared to 77.8 kBtu/sqft for office and 80 kBtu/sqft for all commercial buildings.Courthouses range in size from 1000 sqft to over a million square foot building gross square feet and 1 courtroom to over 100 courtrooms. Small courthouses

The impact of 14-nm photomask uncertainties on computational lithography solutions

Science.gov (United States)

Sturtevant, John; Tejnil, Edita; Lin, Tim; Schultze, Steffen; Buck, Peter; Kalk, Franklin; Nakagawa, Kent; Ning, Guoxiang; Ackmann, Paul; Gans, Fritz; Buergel, Christian

2013-04-01

Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models, which must balance accuracy demands with simulation runtime boundary conditions, rely upon the accurate representation of multiple parameters associated with the scanner and the photomask. While certain system input variables, such as scanner numerical aperture, can be empirically tuned to wafer CD data over a small range around the presumed set point, it can be dangerous to do so since CD errors can alias across multiple input variables. Therefore, many input variables for simulation are based upon designed or recipe-requested values or independent measurements. It is known, however, that certain measurement methodologies, while precise, can have significant inaccuracies. Additionally, there are known errors associated with the representation of certain system parameters. With shrinking total CD control budgets, appropriate accounting for all sources of error becomes more important, and the cumulative consequence of input errors to the computational lithography model can become significant. In this work, we examine with a simulation sensitivity study, the impact of errors in the representation of photomask properties including CD bias, corner rounding, refractive index, thickness, and sidewall angle. The factors that are most critical to be accurately represented in the model are cataloged. CD Bias values are based on state of the art mask manufacturing data and other variables changes are speculated, highlighting the need for improved metrology and awareness.

Accurate lithography simulation model based on convolutional neural networks

Science.gov (United States)

Watanabe, Yuki; Kimura, Taiki; Matsunawa, Tetsuaki; Nojima, Shigeki

2017-07-01

Lithography simulation is an essential technique for today's semiconductor manufacturing process. In order to calculate an entire chip in realistic time, compact resist model is commonly used. The model is established for faster calculation. To have accurate compact resist model, it is necessary to fix a complicated non-linear model function. However, it is difficult to decide an appropriate function manually because there are many options. This paper proposes a new compact resist model using CNN (Convolutional Neural Networks) which is one of deep learning techniques. CNN model makes it possible to determine an appropriate model function and achieve accurate simulation. Experimental results show CNN model can reduce CD prediction errors by 70% compared with the conventional model.

Mechanical design of SXLS (Superconducting X-ray Lithography Source) radio-frequency cavity

Energy Technology Data Exchange (ETDEWEB)

Mortazavi, P.; Sharma, S.; Keane, J.; Thomas, M.

1989-01-01

This paper presents the mechanical design of a Radio-Frequency (RF) cavity to be used on a compact storage ring for Superconducting X-ray Lithography Source (SXLS). Various design features of this cavity are discussed, including basic geometrical configuration, structural design, initial and operational tuning, vacuum multipactoring, power window, and damping of higher order modes. A second application of this cavity design for beam life extension in an existing storage ring is also described. 2 refs., 6 figs.

Mechanical design of SXLS [Superconducting X-ray Lithography Source] radio-frequency cavity

International Nuclear Information System (INIS)

Mortazavi, P.; Sharma, S.; Keane, J.; Thomas, M.

1989-01-01

This paper presents the mechanical design of a Radio-Frequency (RF) cavity to be used on a compact storage ring for Superconducting X-ray Lithography Source (SXLS). Various design features of this cavity are discussed, including basic geometrical configuration, structural design, initial and operational tuning, vacuum multipactoring, power window, and damping of higher order modes. A second application of this cavity design for beam life extension in an existing storage ring is also described. 2 refs., 6 figs

Implicit face prototype learning from geometric information.

Science.gov (United States)

Or, Charles C-F; Wilson, Hugh R

2013-04-19

There is evidence that humans implicitly learn an average or prototype of previously studied faces, as the unseen face prototype is falsely recognized as having been learned (Solso & McCarthy, 1981). Here we investigated the extent and nature of face prototype formation where observers' memory was tested after they studied synthetic faces defined purely in geometric terms in a multidimensional face space. We found a strong prototype effect: The basic results showed that the unseen prototype averaged from the studied faces was falsely identified as learned at a rate of 86.3%, whereas individual studied faces were identified correctly 66.3% of the time and the distractors were incorrectly identified as having been learned only 32.4% of the time. This prototype learning lasted at least 1 week. Face prototype learning occurred even when the studied faces were further from the unseen prototype than the median variation in the population. Prototype memory formation was evident in addition to memory formation of studied face exemplars as demonstrated in our models. Additional studies showed that the prototype effect can be generalized across viewpoints, and head shape and internal features separately contribute to prototype formation. Thus, implicit face prototype extraction in a multidimensional space is a very general aspect of geometric face learning. Copyright © 2013 Elsevier Ltd. All rights reserved.

Novice designers’ use of prototypes in engineering design

Science.gov (United States)

Deininger, Michael; Daly, Shanna R.; Sienko, Kathleen H.; Lee, Jennifer C.

2017-01-01

Prototypes are essential tools in product design processes, but are often underutilized by novice designers. To help novice designers use prototypes more effectively, we must first determine how they currently use prototypes. In this paper, we describe how novice designers conceptualized prototypes and reported using them throughout a design project, and compare reported prototyping use to prototyping best practices. We found that some of the reported prototyping practices by novice designers, such as using inexpensive prototypes early and using prototypes to define user requirements, occurred infrequently and lacked intentionality. Participants’ initial descriptions of prototypes were less sophisticated than how they later described using them and only upon prompted reflection did participants recognize more specific benefits of using prototypes. PMID:29398740

Selective binding of oligonucleotide on TiO{sub 2} surfaces modified by swift heavy ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Vicente Pérez-Girón, J. [Nanoate, S.L. C/Poeta Rafael Morales 2, San Sebastian de los Reyes, 28702 Madrid (Spain); Emerging Viruses Department Heinrich Pette Institute, Hamburg 20251 (Germany); Hirtz, M. [Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology - KIT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); McAtamney, C.; Bell, A.P. [Advanced Microscopy Laboratory, CRANN, Trinity College Dublin, Dublin 2 (Ireland); Antonio Mas, J. [Laboratorio de Genómica del Centro de Apoyo Tecnológico, Universidad Rey Juan Carlos, Campus de Alcorcón 28922, Madrid (Spain); Jaafar, M. [Nanoate, S.L. C/Poeta Rafael Morales 2, San Sebastian de los Reyes, 28702 Madrid (Spain); Departamento de Física de la Materia Condensada, Facultad de Ciencias, Universidad Autónoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Luis, O. de [Nanoate, S.L. C/Poeta Rafael Morales 2, San Sebastian de los Reyes, 28702 Madrid (Spain); Departamento de Bioquímica, Fisiología y Genética Molecular, Facultad de Ciencias de la Salud, Universidad Rey Juan Carlos, Campus de Alcorcón, 28922 Madrid (Spain); Fuchs, H. [Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology - KIT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Physical Institute and Center for Nanotechnology (CeNTech), Wilhelm-Klemm-Straße 10, University of Münster (Germany); and others

2014-11-15

We have used swift heavy-ion beam based lithography to create patterned bio-functional surfaces on rutile TiO{sub 2} single crystals. The applied lithography method generates a permanent and well defined periodic structure of micrometre sized square holes having nanostructured TiO{sub 2} surfaces, presenting different physical and chemical properties compared to the surrounding rutile single crystal surface. On the patterned substrates selective binding of oligonucleotides molecules is possible at the surfaces of the holes. This immobilisation process is only being controlled by UV light exposure. The patterned transparent substrates are compatible with fluorescence detection techniques, are mechanically robust, have a high tolerance to extreme chemical and temperature environments, and apparently do not degrade after ten cycles of use. These qualities make the patterned TiO{sub 2} substrates useful for potential biosensor applications.

Prototyping of user interfaces for mobile applications

CERN Document Server

Bähr, Benjamin

2017-01-01

This book investigates processes for the prototyping of user interfaces for mobile apps, and describes the development of new concepts and tools that can improve the prototype driven app development in the early stages. It presents the development and evaluation of a new requirements catalogue for prototyping mobile app tools that identifies the most important criteria such tools should meet at different prototype-development stages. This catalogue is not just a good point of orientation for designing new prototyping approaches, but also provides a set of metrics for a comparing the performance of alternative prototyping tools. In addition, the book discusses the development of Blended Prototyping, a new approach for prototyping user interfaces for mobile applications in the early and middle development stages, and presents the results of an evaluation of its performance, showing that it provides a tool for teamwork-oriented, creative prototyping of mobile apps in the early design stages.

Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching

Science.gov (United States)

Ichikawa, Takashi; Yagisawa, Takashi; Furukawa, Shinichi; Taguchi, Takafumi; Nojima, Shigeki; Murakami, Sadatoshi; Tamaoki, Naoki

2018-06-01

A topography simulation of high-aspect-ratio etching considering transports of ions and neutrals is performed, and the mechanism of reactive ion etching (RIE) residues in three-dimensional corner patterns is revealed. Limited ion flux and CF2 diffusion from the wide space of the corner is found to have an effect on the RIE residues. Cooperative simulation of lithography and topography is used to solve the RIE residue problem.

EUCLID ARCHIVE SYSTEM PROTOTYPE

NARCIS (Netherlands)

Belikov, Andrey; Williams, Owen; Droge, Bob; Tsyganov, Andrey; Boxhoorn, Danny; McFarland, John; Verdoes Kleijn, Gijs; Valentijn, E; Altieri, Bruno; Dabin, Christophe; Pasian, F.; Osuna, Pedro; Soille, P.; Marchetti, P.G.

2014-01-01

The Euclid Archive System prototype is a functional information system which is used to address the numerous challenges in the development of fully functional data processing system for Euclid. The prototype must support the highly distributed nature of the Euclid Science Ground System, with Science

PRMS Data Warehousing Prototype

Science.gov (United States)

Guruvadoo, Eranna K.

2002-01-01

Project and Resource Management System (PRMS) is a web-based, mid-level management tool developed at KSC to provide a unified enterprise framework for Project and Mission management. The addition of a data warehouse as a strategic component to the PRMS is investigated through the analysis, design and implementation processes of a data warehouse prototype. As a proof of concept, a demonstration of the prototype with its OLAP's technology for multidimensional data analysis is made. The results of the data analysis and the design constraints are discussed. The prototype can be used to motivate interest and support for an operational data warehouse.

Fabrication and characterization of one- and two-dimensional regular patterns produced employing multiple exposure holographic lithography

DEFF Research Database (Denmark)

Tamulevičius, S.; Jurkevičiute, A.; Armakavičius, N.

2017-01-01

In this paper we describe fabrication and characterization methods of two-dimensional periodic microstructures in photoresist with pitch of 1.2 urn and lattice constant 1.2-4.8 μm, formed using two-beam multiple exposure holographic lithography technique. The regular structures were recorded empl...

Fabrication of sub-micrometric metallic hollow-core structures by laser interference lithography

Energy Technology Data Exchange (ETDEWEB)

Perez, Noemi; Tavera, Txaber [CEIT and Tecnun (University of Navarra) Manuel de Lardizabal 15, 20018 San Sebastian (Spain); Rodriguez, Ainara [CIC Microgune, Paseo Mikeletegi 48, 20009 San Sebastian (Spain); Ellman, Miguel; Ayerdi, Isabel; Olaizola, Santiago M. [CEIT and Tecnun (University of Navarra) Manuel de Lardizabal 15, 20018 San Sebastian (Spain)

2012-09-15

Highlights: Black-Right-Pointing-Pointer Arrays of hollow-core sub-micrometric structures are fabricated. Black-Right-Pointing-Pointer Laser interference lithography is used for the pattering of the resist sacrificial layer. Black-Right-Pointing-Pointer The removal of the sacrificial layer gives rise to metallic channels with a maximum crosssectional area of 0.1 {mu}m{sup 2}. Black-Right-Pointing-Pointer These structures can be used in nanofluidics. - Abstract: This work presents the fabrication of hollow-core metallic structures with a complete laser interference lithography (LIL) process. A negative photoresist is used as sacrificial layer. It is exposed to the pattern resulting from the interference of two laser beams, which produces a structure of photoresist lines with a period of 600 nm. After development of the resist, platinum is deposited on the samples by DC sputtering and the resist is removed with acetone. The resulting metallic structures consist in a continuous platinum film that replicates the photoresist relief with a hollow core. The cross section of the channels is up to 0.1 {mu}m{sup 2}. The fabricated samples are characterized by FESEM and FIB. This last tool helps to provide a clear picture of the shape and size of the channels. Conveniently dimensioned, this array of metallic submicrometric channels can be used in microfluidic or IC cooling applications.

Designing and testing prototypes

NARCIS (Netherlands)

Vereijken, P.; Wijnands, F.; Stol, W.

1995-01-01

This second progress report focuses on designing a theoretical prototype by linking parameters to methods and designing the methods in this context until they are ready for initial testing. The report focuses also on testing and improving the prototype in general and the methods in particular until

Free-electron laser emission architecture impact on extreme ultraviolet lithography

Science.gov (United States)

Hosler, Erik R.; Wood, Obert R.; Barletta, William A.

2017-10-01

Laser-produced plasma (LPP) EUV sources have demonstrated ˜125 W at customer sites, establishing confidence in EUV lithography (EUVL) as a viable manufacturing technology. However, for extension to the 3-nm technology node and beyond, existing scanner/source technology must enable higher-NA imaging systems (requiring increased resist dose and providing half-field exposures) and/or EUV multipatterning (requiring increased wafer throughput proportional to the number of exposure passes). Both development paths will require a substantial increase in EUV source power to maintain the economic viability of the technology, creating an opportunity for free-electron laser (FEL) EUV sources. FEL-based EUV sources offer an economic, high-power/single-source alternative to LPP EUV sources. Should FELs become the preferred next-generation EUV source, the choice of FEL emission architecture will greatly affect its operational stability and overall capability. A near-term industrialized FEL is expected to utilize one of the following three existing emission architectures: (1) self-amplified spontaneous emission, (2) regenerative amplifier, or (3) self-seeding. Model accelerator parameters are put forward to evaluate the impact of emission architecture on FEL output. Then, variations in the parameter space are applied to assess the potential impact to lithography operations, thereby establishing component sensitivity. The operating range of various accelerator components is discussed based on current accelerator performance demonstrated at various scientific user facilities. Finally, comparison of the performance between the model accelerator parameters and the variation in parameter space provides a means to evaluate the potential emission architectures. A scorecard is presented to facilitate this evaluation and provides a framework for future FEL design and enablement for EUVL applications.

Prototypes in engineering design: Definitions and strategies

DEFF Research Database (Denmark)

Jensen, Lasse Skovgaard; Özkil, Ali Gürcan; Mortensen, Niels Henrik

2016-01-01

By reviewing literature, we investigate types, purposes and definitions of prototypes. There is no overarching definition of a prototype, but we identify five categories of prototypes in litterature. We further synthesize and reference previous work to create an overview of aspects in prototyping...

Thermo-curable epoxy systems for nanoimprint lithography

International Nuclear Information System (INIS)

Wu, Chun-Chang; Hsu, Steve Lien-Chung

2010-01-01

In this work, we have used solvent-free thermo-curable epoxy systems for low-pressure and moderate-temperature nanoimprint lithography (NIL). The curing kinetic parameters and conversion of diglycidyl ether of bisphenol A (DGEBA) resin with different ambient-cure 930 and 954 hardeners were studied by the isothermal DSC technique. They are useful for the study of epoxy resins in the imprinting application. The DGEBA/930 and DGEBA/954 epoxy resists can be imprinted to obtain high-density nano- and micro-scale patterns on a flexible indium tin oxide/poly(ethylene terephthalate) (ITO/PET) substrate. The DGEBA/930 epoxy resin is not only suitable for resist material, but also for plastic mold material. Highly dense nanometer patterns can be successfully imprinted using a UV-curable resist from the DGEBA/930 epoxy mold. Using the replicated DGEBA/930 epoxy mold instead of the expensive master can prevent brittle failure of the silicon molds in the NIL

Inclined nanoimprinting lithography for 3D nanopatterning

International Nuclear Information System (INIS)

Liu Zhan; Bucknall, David G; Allen, Mark G

2011-01-01

We report a non-conventional shear-force-driven nanofabrication approach, inclined nanoimprint lithography (INIL), for producing 3D nanostructures of varying heights on planar substrates in a single imprinting step. Such 3D nanostructures are fabricated by exploiting polymer anisotropic dewetting where the degree of anisotropy can be controlled by the magnitude of the inclination angle. The feature size is reduced from micron scale of the template to a resultant nanoscale pattern. The underlying INIL mechanism is investigated both experimentally and theoretically. The results indicate that the shear force generated at a non-zero inclination angle induced by the INIL apparatus essentially leads to asymmetry in the polymer flow direction ultimately resulting in 3D nanopatterns with different heights. INIL removes the requirements in conventional nanolithography of either utilizing 3D templates or using multiple lithographic steps. This technique enables various 3D nanoscale devices including angle-resolved photonic and plasmonic crystals to be fabricated.

STRUCTURING OF DIAMOND FILMS USING MICROSPHERE LITHOGRAPHY

Directory of Open Access Journals (Sweden)

Mária Domonkos

2014-10-01

Full Text Available In this study, the structuring of micro- and nanocrystalline diamond thin films is demonstrated. The structuring of the diamond films is performed using the technique of microsphere lithography followed by reactive ion etching. Specifically, this paper presents a four-step fabrication process: diamond deposition (microwave plasma assisted chemical vapor deposition, mask preparation (by the standard Langmuir-Blodgett method, mask modification and diamond etching. A self-assembled monolayer of monodisperse polystyrene (PS microspheres with close-packed ordering is used as the primary template. Then the PS microspheres and the diamond films are processed in capacitively coupled radiofrequency plasma  using different plasma chemistries. This fabrication method illustrates the preparation of large arrays of periodic and homogeneous hillock-like structures. The surface morphology of processed diamond films is characterized by scanning electron microscopy and atomic force microscope. The potential applications of such diamond structures in various fields of nanotechnology are also briefly discussed.

Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

International Nuclear Information System (INIS)

Huang, H.W.; Lin, C.H.; Huang, J.K.; Lee, K.Y.; Lin, C.F.; Yu, C.C.; Tsai, J.Y.; Hsueh, R.; Kuo, H.C.; Wang, S.C.

2009-01-01

In this paper, gallium-nitride (GaN)-based light-emitting diodes (LEDs) with nano-hole patterned sapphire (NHPSS) by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with NHPSS increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.33, and the wall-plug efficiency is 30% higher at 20 mA indicating that the LED with NHPSS had larger light extraction efficiency. In addition, by examining the radiation patterns, the LED with NHPSS shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

TiO2/ CNT hetero-structure with variable electron beam diameter suitable for nano lithography

International Nuclear Information System (INIS)

Barati, F.; Abdi, Y.; Arzi, E.

2012-01-01

We report fabrication of a novel TiO 2 /carbon nano tube based field emission device suitable for nano lithography and fabrication of transistor. The growth of carbon nano tubes is performed on silicon substrates using plasma-enhanced chemical vapor deposition method. The vertically grown carbon nano tubes are encapsulated by TiO 2 using an atmospheric pressure chemical vapor deposition system. Field emission from the carbon nano tubes is realized by mechanical polishing of the prepared nano structure. The possibility of the application of such nano structures as a lithography tool with variable electron beam diameter was investigated. The obtained results show that spot size of less than 30 nm can be obtained by applying a proper voltage on TiO 2 surrounding gate. Electrical measurements of the fabricated device confirm the capability of this nano structure for the fabrication of field emission based field effect transistor. By applying a voltage between the gate and the cathode electrode, the emission current from carbon nano tubes shows a significant drop, indicating proper control of gate on the emission current.

Fundamental study of droplet spray characteristics in photomask cleaning for advanced lithography

Science.gov (United States)

Lu, C. L.; Yu, C. H.; Liu, W. H.; Hsu, Luke; Chin, Angus; Lee, S. C.; Yen, Anthony; Lee, Gaston; Dress, Peter; Singh, Sherjang; Dietze, Uwe

2010-09-01

The fundamentals of droplet-based cleaning of photomasks are investigated and performance regimes that enable the use of binary spray technologies in advanced mask cleaning are identified. Using phase Doppler anemometry techniques, the effect of key performance parameters such as liquid and gas flow rates and temperature, nozzle design, and surface distance on droplet size, velocity, and distributions were studied. The data are correlated to particle removal efficiency (PRE) and feature damage results obtained on advanced photomasks for 193-nm immersion lithography.

Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Zhan, Teng

2015-01-01

Surface-patterning technologies have enabled the improvement of currently existinglight-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency ofgreen GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars onInGaN∕GaN quantum-well LEDs. By ...

Sub-micron silicon nitride waveguide fabrication using conventional optical lithography.

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Kamyab, Lobna; Rostami, Ali; Capolino, Filippo; Boyraz, Ozdal

2015-03-09

We demonstrate a novel technique to fabricate sub-micron silicon nitride waveguides using conventional contact lithography with MEMS-grade photomasks. Potassium hydroxide anisotropic etching of silicon facilitates line reduction and roughness smoothing and is key to the technique. The fabricated waveguides is measured to have a propagation loss of 0.8dB/cm and nonlinear coefficient of γ = 0.3/W/m. A low anomalous dispersion of <100ps/nm/km is also predicted. This type of waveguide is highly suitable for nonlinear optics. The channels naturally formed on top of the waveguide also make it promising for plasmonics and quantum efficiency enhancement in sensing applications.

Prototype moving-ring reactor

International Nuclear Information System (INIS)

Smith, A.C. Jr.; Ashworth, C.P.; Abreu, K.E.

1981-01-01

The objective of this work was to design a prototype fusion reactor based on fusion plasmas confined as ''Compact Toruses.' Six major criteria guided the prototype design. The prototype must: (1) produce net electricity decisively (P/sub net/ >70% of P/sub gross/), with P/sub net/ approximately 100 MW(e); (2) have small physical size (low project cost) but commercial plant; (3) have all features required of commerical plants; (4) avoid unreasonable extrapolation of technology; (5) minimize nuclear issues substantially, i.e. accident and waste issues of public concern, and (6) be modular (to permit repetitive fabrication of parts) and be maintainable with low occupational radiological exposures

Plasmonic Nanostructures Prepared by Soft UV Nanoimprint Lithography and Their Application in Biological Sensing

Directory of Open Access Journals (Sweden)

Grégory Barbillon

2012-01-01

Full Text Available We prepared high-density plasmonic nanostructures on a glass substrate. By using soft UV nanoimprint lithography, gold nanodisks with a diameter of 65 nm were obtained on an area of 1 mm2. We tested these gold nanosensors in the biotin/streptavidin system to study their selectivity and sensitivity of detection. The prepared gold nanodisks could detect streptavidin at 10 pM.

Thermal deformation prediction in reticles for extreme ultraviolet lithography based on a measurement-dependent low-order model

NARCIS (Netherlands)

Bikcora, C.; Weiland, S.; Coene, W.M.J.

2014-01-01

In extreme ultraviolet lithography, imaging errors due to thermal deformation of reticles are becoming progressively intolerable as the source power increases. Despite this trend, such errors can be mitigated by adjusting the wafer and reticle stages based on a set of predicted deformation-induced

Towards an Operational Framework for Architectural Prototyping

DEFF Research Database (Denmark)

Christensen, Henrik Bærbak

2005-01-01

We use a case study in architectural prototyping as input for presenting a first, tentative, framework describing key concepts and their relationships in architectural prototyping processes.......We use a case study in architectural prototyping as input for presenting a first, tentative, framework describing key concepts and their relationships in architectural prototyping processes....

Evaluation of a prototype infrasound system

International Nuclear Information System (INIS)

Whitaker, R.; Sandoval, T.; Breding, D.; Kromer, D.

1997-01-01

Under Department of Energy sponsorship, Sandia National Laboratories and Los Alamos National Laboratory cooperated to develop a prototype infrasonic array, with associated documentation, that could be used as part of the International Monitoring System. The United States Government or foreign countries could procure commercially available systems based on this prototype to fulfill their Comprehensive Test Ban Treaty (CTBT) obligations. The prototype is a four-element array in a triangular layout as recommended in CD/NTB/WP.224 with an element at each corner and one in the center. The prototype test configuration utilize an array spacing of 1 km. The prototype infrasound system has the following objectives: (1) Provide a prototype that reliably acquires and transmits near real-time infrasonic data to facilitate the rapid location and identification of atmospheric events. (2) Provide documentation that could be used by the United States and foreign countries to procure infrasound systems commercially to fulfill their CTBT responsibilities. Infrasonic monitoring is an effective, low cost technology for detecting atmospheric explosions. The low frequency components of explosion signals propagate to long ranges (few thousand kilometers) where they can be detected with an array of sensors. Los Alamos National Laboratory's expertise in infrasound systems and phenomenology when combined with Sandia's expertise in providing verification quality system for treaty monitoring make an excellent team to provide the prototype infrasound sensor system. By September 1997, the prototype infrasound system will have been procured, integrated, evaluated and documented. Final documentation will include a system requirements document, an evaluation report and a hardware design document. The hardware design document will describe the various hardware components used in the infrasound prototype and their interrelationships

Efficient Excitation of Channel Plasmons in Tailored, UV-Lithography-Defined V-Grooves

DEFF Research Database (Denmark)

Smith, Cameron L. C.; Thilsted, Anil Haraksingh; Garcia-Ortiz, Cesar E.

2014-01-01

We demonstrate the highly efficient (>50%) conversion of freely propagating light to channel plasmon-polaritons (CPPs) in gold V-groove waveguides using compact 1.6 μm long waveguide-termination coupling mirrors. Our straightforward fabrication process, involving UV-lithography and crystallographic...... silicon etching, forms the coupling mirrors innately and ensures exceptional-quality, wafer-scale device production. We tailor the V-shaped profiles by thermal silicon oxidation in order to shift initially wedge-located modes downward into the V-grooves, resulting in well-confined CPPs suitable...

EUSO-TA prototype telescope

Energy Technology Data Exchange (ETDEWEB)

Bisconti, Francesca, E-mail: francesca.bisconti@kit.edu

2016-07-11

EUSO-TA is one of the prototypes developed for the JEM-EUSO project, a space-based large field-of-view telescope to observe the fluorescence light emitted by cosmic ray air showers in the atmosphere. EUSO-TA is a ground-based prototype located at the Telescope Array (TA) site in Utah, USA, where an Electron Light Source and a Central Laser Facility are installed. The purpose of the EUSO-TA project is to calibrate the prototype with the TA fluorescence detector in presence of well-known light sources and cosmic ray air showers. In 2015, the detector started the first measurements and tests using the mentioned light sources have been performed successfully. A first cosmic ray candidate has been observed, as well as stars of different magnitude and color index. Since Silicon Photo-Multipliers (SiPMs) are very promising for fluorescence telescopes of next generation, they are under consideration for the realization of a new prototype of EUSO Photo Detector Module (PDM). The response of this sensor type is under investigation through simulations and laboratory experimentation.

EUSO-TA prototype telescope

Science.gov (United States)

Bisconti, Francesca; JEM-EUSO Collaboration

2016-07-01

EUSO-TA is one of the prototypes developed for the JEM-EUSO project, a space-based large field-of-view telescope to observe the fluorescence light emitted by cosmic ray air showers in the atmosphere. EUSO-TA is a ground-based prototype located at the Telescope Array (TA) site in Utah, USA, where an Electron Light Source and a Central Laser Facility are installed. The purpose of the EUSO-TA project is to calibrate the prototype with the TA fluorescence detector in presence of well-known light sources and cosmic ray air showers. In 2015, the detector started the first measurements and tests using the mentioned light sources have been performed successfully. A first cosmic ray candidate has been observed, as well as stars of different magnitude and color index. Since Silicon Photo-Multipliers (SiPMs) are very promising for fluorescence telescopes of next generation, they are under consideration for the realization of a new prototype of EUSO Photo Detector Module (PDM). The response of this sensor type is under investigation through simulations and laboratory experimentation.

Rapid Prototyping of Formally Modelled Distributed Systems

OpenAIRE

Buchs, Didier; Buffo, Mathieu; Titsworth, Frances M.

1999-01-01

This paper presents various kinds of prototypes, used in the prototyping of formally modelled distributed systems. It presents the notions of prototyping techniques and prototype evolution, and shows how to relate them to the software life-cycle. It is illustrated through the use of the formal modelling language for distributed systems CO-OPN/2.

Architectural Prototyping in Industrial Practice

DEFF Research Database (Denmark)

Christensen, Henrik Bærbak; Hansen, Klaus Marius

2008-01-01

Architectural prototyping is the process of using executable code to investigate stakeholders’ software architecture concerns with respect to a system under development. Previous work has established this as a useful and cost-effective way of exploration and learning of the design space of a system......, in addressing issues regarding quality attributes, in addressing architectural risks, and in addressing the problem of knowledge transfer and conformance. Little work has been reported so far on the actual industrial use of architectural prototyping. In this paper, we report from an ethnographical study...... and focus group involving architects from four companies in which we have focused on architectural prototypes. Our findings conclude that architectural prototypes play an important role in resolving problems experimentally, but less so in exploring alternative solutions. Furthermore, architectural...

PEAR: Prototyping Expressive Animated Robots - A framework for social robot prototyping

OpenAIRE

Balit , Etienne; Vaufreydaz , Dominique; Reignier , Patrick

2018-01-01

International audience; Social robots are transitioning from lab experiments to commercial products, creating new needs for proto-typing and design tools. In this paper, we present a framework to facilitate the prototyping of expressive animated robots. For this, we start by reviewing the design of existing social robots in order to define a set of basic components of social robots. We then show how to extend an existing 3D animation software to enable the animation of these components. By co...

Integration of organic based Schottly junctions into crossbar arrays by standard UV lithography

DEFF Research Database (Denmark)

Katsia, E.; Tallarida, G.; Kutrzeba-Kotowska, B.

2008-01-01

organic based Schottky diodes in a crossbar architecture, by standard UV lithography. The proposed integration route features a limited number of process steps and prevents the exposure of the active materials to UV. This approach was developed using poly(3-hexylthiophene) as a model compound...... and was successfully applied to different organic semiconductors. The electrical characteristics of the as prepared junctions reveal the successful patterning and demonstrate the compatibility of the process sequence steps with the organic materials....

Prototyping chips in minutes: Direct Laser Plotting (DLP) of functional microfluidic structures

KAUST Repository

Wang, Limu

2013-10-10

We report a fast and simple prototyping method to fabricate polymer-based microfluidic chips using Direct Laser Plotting (DLP) technique, by which various functional micro-structures can be realized within minutes, in a mask-free and out-of-cleanroom fashion. A 2D Computer-Aid-Design (CAD) software was employed to layout the required micro-structures and micro-channels, a CO2 laser plotter was then used to construct the microstructures. The desired patterns can be plotted directly on PDMS substrates and bio-compatible polymer films by manipulating the strength and density of laser pulses. With the DLP technique, chip-embedded micro-electrodes, micro-mixers and 3D microfluidic chips with 5 layers, which normally require several days of work in a cleanroom facility, can be fabricated in minutes in common laboratory. This novel method can produce microfluidic channels with average feature size of 100 μm, while feature size of 50 μm or smaller is achievable by making use of the interference effect from laser impulsion. In this report, we present the optimized parameters for successful fabrication of 3D microchannels, micro-mixers and microfluidic chips for protein concentration measurements (Bovine Serum Albumine (BSA) test), and a novel procedure to pattern flexible embedding electrodes on PDMS-based microfluidic chips. DLP offers a convenient and low cost alternative to conventional microfluidic channel fabrication technique which relies on complicated and hazardous soft lithography process.

Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography

Directory of Open Access Journals (Sweden)

Harutaka Mekaru

2015-02-01

Full Text Available In combination with tapered-trench-etching of Si and SU-8 photoresist, a grayscale mask for deep X-ray lithography was fabricated and passed a 10-times-exposure test. The performance of the X-ray grayscale mask was evaluated using the TERAS synchrotron radiation facility at the National Institute of Advanced Industrial Science and Technology (AIST. Although the SU-8 before photo-curing has been evaluated as a negative-tone photoresist for ultraviolet (UV and X-ray lithographies, the characteristic of the SU-8 after photo-curing has not been investigated. A polymethyl methacrylate (PMMA sheet was irradiated by a synchrotron radiation through an X-ray mask, and relationships between the dose energy and exposure depth, and between the dose energy and dimensional transition, were investigated. Using such a technique, the shape of a 26-μm-high Si absorber was transformed into the shape of a PMMA microneedle with a height of 76 μm, and done with a high contrast. Although during the fabrication process of the X-ray mask a 100-μm-pattern-pitch (by design was enlarged to 120 μm. However, with an increase in an integrated dose energy this number decreased to 99 μm. These results show that the X-ray grayscale mask has many practical applications. In this paper, the author reports on the evaluation results of SU-8 when used as a membrane material for an X-ray mask.

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography.

Science.gov (United States)

Schnauber, Peter; Schall, Johannes; Bounouar, Samir; Höhne, Theresa; Park, Suk-In; Ryu, Geun-Hwan; Heindel, Tobias; Burger, Sven; Song, Jin-Dong; Rodt, Sven; Reitzenstein, Stephan

2018-04-11

The development of multinode quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates, and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of preselected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with g (2) (0) = 0.13 ± 0.02. Due to its high patterning resolution as well as spectral and spatial control, in situ electron beam lithography allows for integration of preselected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way toward multinode, fully integrated quantum photonic chips.

Supercritical CO2 drying of poly(methyl methacrylate) photoresist for deep x-ray lithography: a brief note

Science.gov (United States)

Shukla, Rahul; Abhinandan, Lala; Sharma, Shivdutt

2017-07-01

Poly(methyl methacrylate) (PMMA) is an extensively used positive photoresist for deep x-ray lithography. The post-development release of the microstructures of PMMA becomes very critical for high aspect ratio fragile and freestanding microstructures. Release of high aspect ratio comb-drive microstructure of PMMA made by one-step x-ray lithography (OXL) is studied. The effect of low-surface tension Isopropyl alcohol (IPA) over water is investigated for release of the high aspect ratio microstructures using conventional and supercritical (SC) CO2 drying. The results of conventional drying are also compared for the samples released or dried in both in-house developed and commercial SC CO2 dryer. It is found that in all cases the microstructures of PMMA are permanently deformed and damaged while using SC CO2 for drying. For free-standing high aspect ratio microstructures of PMMA made by OXL, it is advised to use low-surface tension IPA over DI water. However, this brings a limitation on the design of the microstructure.

Prospects of DUV OoB suppression techniques in EUV lithography

Science.gov (United States)

Park, Chang-Min; Kim, Insung; Kim, Sang-Hyun; Kim, Dong-Wan; Hwang, Myung-Soo; Kang, Soon-Nam; Park, Cheolhong; Kim, Hyun-Woo; Yeo, Jeong-Ho; Kim, Seong-Sue

2014-04-01

Though scaling of source power is still the biggest challenge in EUV lithography (EUVL) technology era, CD and overlay controls for transistor's requirement are also precondition of adopting EUVL in mass production. Two kinds of contributors are identified as risks for CDU and Overlay: Infrared (IR) and deep ultraviolet (DUV) out of band (OOB) radiations from laser produced plasma (LPP) EUV source. IR from plasma generating CO2 laser that causes optics heating and wafer overlay error is well suppressed by introducing grating on collector to diffract IR off the optical axis and is the effect has been confirmed by operation of pre-production tool (NXE3100). EUV and DUV OOB which are reflected from mask black boarder (BB) are root causes of EUV-specific CD error at the boundaries of exposed shots which would result in the problem of CDU out of spec unless sufficiently suppressed. Therefore, control of DUV OOB reflection from the mask BB is one of the key technologies that must be developed prior to EUV mass production. In this paper, quantitative assessment on the advantage and the disadvantage of potential OOB solutions will be discussed. EUV and DUV OOB impacts on wafer CDs are measured from NXE3100 & NXE3300 experiments. Significant increase of DUV OOB impact on CD from NXE3300 compared with NXE3100 is observed. There are three ways of technology being developed to suppress DUV OOB: spectral purity filter (SPF) as a scanner solution, multi-layer etching as a solution on mask, and resist top-coating as a process solution. PROs and CONs of on-scanner, on-mask, and on-resist solution for the mass production of EUV lithography will be discussed.

Evaluation of EUV resist performance using interference lithography

Science.gov (United States)

Buitrago, E.; Yildirim, O.; Verspaget, C.; Tsugama, N.; Hoefnagels, R.; Rispens, G.; Ekinci, Y.

2015-03-01

Extreme ultraviolet lithography (EUVL) stands as the most promising solution for the fabrication of future technology nodes in the semiconductor industry. Nonetheless, the successful introduction of EUVL into the extremely competitive and stringent high-volume manufacturing (HVM) phase remains uncertain partly because of the still limiting performance of EUV resists below 16 nm half-pitch (HP) resolution. Particularly, there exists a trade-off relationship between resolution (half-pitch), sensitivity (dose) and line-edge roughness (LER) that can be achieved with existing materials. This trade-off ultimately hampers their performance and extendibility towards future technology nodes. Here we present a comparative study of highly promising chemically amplified resists (CARs) that have been evaluated using the EUV interference lithography (EUV-IL) tool at the Swiss Light Source (SLS) synchrotron facility in the Paul Scherrer Institute (PSI). In this study we have focused on the performance qualification of different resists mainly for 18 nm and 16 nm half-pitch line/space resolution (L/S = 1:1). Among the most promising candidates tested, there are a few choices that allow for 16 nm HP resolution to be achieved with high exposure latitude (up to ~ 33%), low LER (down to 3.3 nm or ~ 20% of critical dimension CD) and low dose-to-size (or best-energy, BE) < 41 mJ/cm2 values. Patterning was even demonstrated down to 12 nm HP with one of CARs (R1UL1) evaluated for their extendibility beyond the 16 nm HP resolution. 11 nm HP patterning with some pattern collapse and well resolved patterns down 12 nm were also demonstrated with another CAR (R15UL1) formulated for 16 nm HP resolution and below. With such resist it was possible even to obtain a small process window for 14 nm HP processing with an EL ~ 8% (BE ~ 37 mJ/cm2, LER ~ 4.5 nm). Though encouraging, fulfilling all of the requirements necessary for high volume production, such as high resolution, low LER, high photon

High throughput nanoimprint lithography for semiconductor memory applications

Science.gov (United States)

Ye, Zhengmao; Zhang, Wei; Khusnatdinov, Niyaz; Stachowiak, Tim; Irving, J. W.; Longsine, Whitney; Traub, Matthew; Fletcher, Brian; Liu, Weijun

2017-03-01

Imprint lithography is a promising technology for replication of nano-scale features. For semiconductor device applications, Canon deposits a low viscosity resist on a field by field basis using jetting technology. A patterned mask is lowered into the resist fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are two critical components to meeting throughput requirements for imprint lithography. Using a similar approach to what is already done for many deposition and etch processes, imprint stations can be clustered to enhance throughput. The FPA-1200NZ2C is a four station cluster system designed for high volume manufacturing. For a single station, throughput includes overhead, resist dispense, resist fill time (or spread time), exposure and separation. Resist exposure time and mask/wafer separation are well understood processing steps with typical durations on the order of 0.10 to 0.20 seconds. To achieve a total process throughput of 17 wafers per hour (wph) for a single station, it is necessary to complete the fluid fill step in 1.2 seconds. For a throughput of 20 wph, fill time must be reduced to only one 1.1 seconds. There are several parameters that can impact resist filling. Key parameters include resist drop volume (smaller is better), system controls (which address drop spreading after jetting), Design for Imprint or DFI (to accelerate drop spreading) and material engineering (to promote wetting between the resist and underlying adhesion layer). In addition, it is mandatory to maintain fast filling, even for edge field imprinting. In this paper, we address the improvements made in all of these parameters to first enable a 1.20 second filling process for a device like pattern and have demonstrated this capability for both full fields and edge fields. Non

The Scintillator Tile Hadronic Calorimeter Prototype

International Nuclear Information System (INIS)

Rusinov, V.

2006-01-01

A high granularity scintillator hadronic calorimeter prototype is described. The calorimeter is based on a novel photodetector - Silicon Photo-Multiplier (SiPM). The main parameters of SiPM are discussed as well as readout cell construction and optimization. The experience with a small prototype production and testing is described. A new 8 k channel prototype is being manufactured now

Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: III. Post exposure baking on quartz substrates

Science.gov (United States)

Kozawa, Takahiro

2015-09-01

Electron beam (EB) lithography is a key technology for the fabrication of photomasks for ArF immersion and extreme ultraviolet (EUV) lithography and molds for nanoimprint lithography. In this study, the temporal change in the chemical gradient of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) was calculated until it became constant, independently of postexposure baking (PEB) time, to clarify the feasibility of single nano patterning on quartz substrates using EB lithography with chemically amplified resist processes. When the quencher diffusion constant is the same as the acid diffusion constant, the maximum chemical gradient of the line-and-space pattern with a 7 nm quarter-pitch did not differ much from that with a 14 nm half-pitch under the condition described above. Also, from the viewpoint of process control, a low quencher diffusion constant is considered to be preferable for the fabrication of line-and-space patterns with a 7 nm quarter-pitch on quartz substrates.

A compact system for large-area thermal nanoimprint lithography using smart stamps

DEFF Research Database (Denmark)

Pedersen, Rasmus Haugstrup; Hansen, Ole; Kristensen, Anders

2008-01-01

We present a simple apparatus for thermal nanoimprint lithography. In this work, the stamp is designed to significantly reduce the requirements for pressure application on the external imprint system. By MEMS-based processing, an air cavity inside the stamp is created, and the required pressure...... for successful imprint is reduced. Additionally, the stamp is capable of performing controlled demolding after imprint. Due to the complexity of the stamp, a compact and cost-effective imprint apparatus can be constructed. The design and fabrication of the advanced stamp as well as the simple imprint equipment...

Vitreous carbon mask substrate for X-ray lithography

Science.gov (United States)

Aigeldinger, Georg [Livermore, CA; Skala, Dawn M [Fremont, CA; Griffiths, Stewart K [Livermore, CA; Talin, Albert Alec [Livermore, CA; Losey, Matthew W [Livermore, CA; Yang, Chu-Yeu Peter [Dublin, CA

2009-10-27

The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

Virtual Video Prototyping for Healthcare Systems

DEFF Research Database (Denmark)

Bardram, Jakob Eyvind; Bossen, Claus; Lykke-Olesen, Andreas

2002-01-01

Virtual studio technology enables the mixing of physical and digital 3D objects and thus expands the way of representing design ideas in terms of virtual video prototypes, which offers new possibilities for designers by combining elements of prototypes, mock-ups, scenarios, and conventional video....... In this article we report our initial experience in the domain of pervasive healthcare with producing virtual video prototypes and using them in a design workshop. Our experience has been predominantly favourable. The production of a virtual video prototype forces the designers to decide very concrete design...... issues, since one cannot avoid paying attention to the physical, real-world constraints and to details in the usage-interaction between users and technology. From the users' perspective, during our evaluation of the virtual video prototype, we experienced how it enabled users to relate...

Branched poly(ethyleneimine): a versatile scaffold for patterning polymer brushes by means of remote photocatalytic lithography

Science.gov (United States)

Panzarasa, Guido; Dübner, Matthias; Soliveri, Guido; Edler, Matthias; Griesser, Thomas

2017-09-01

Patterning of functional surfaces is one of the cornerstones of nanotechnology as it allows the fabrication of sensors and lab-on-a-chip devices. Here, the patterning of self-assembled monolayers of branched poly(ethyleneimine) (bPEI) on silica was achieved by means of remote photocatalytic lithography. Moreover, when 2-bromoisobutyryl-modified bPEI was used, the resulting pattern could be amplified by grafting polymer brushes by means of surface-initiated atom transfer radical polymerization. In contrast to previous reports for the patterning of bPEI, the present approach can be conducted in minutes instead of hours, reducing the exposure time to UV radiation and enhancing the overall efficiency. Furthermore, our approach is much more user-friendly, allowing a facile fabrication of patterned initiator-modified surfaces and the use of inexpensive instrumentation such as a low-power UV source and a simple photomask. Considering the versatility of bPEI as a scaffold for the development of biosensors, patterning by means of remote photocatalytic lithography will open new opportunities in a broad field of applications.

Method for the protection of extreme ultraviolet lithography optics

Science.gov (United States)

Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

2010-06-22

A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

Prompt and Precise Prototyping

Science.gov (United States)

2003-01-01

For Sanders Design International, Inc., of Wilton, New Hampshire, every passing second between the concept and realization of a product is essential to succeed in the rapid prototyping industry where amongst heavy competition, faster time-to-market means more business. To separate itself from its rivals, Sanders Design aligned with NASA's Marshall Space Flight Center to develop what it considers to be the most accurate rapid prototyping machine for fabrication of extremely precise tooling prototypes. The company's Rapid ToolMaker System has revolutionized production of high quality, small-to-medium sized prototype patterns and tooling molds with an exactness that surpasses that of computer numerically-controlled (CNC) machining devices. Created with funding and support from Marshall under a Small Business Innovation Research (SBIR) contract, the Rapid ToolMaker is a dual-use technology with applications in both commercial and military aerospace fields. The advanced technology provides cost savings in the design and manufacturing of automotive, electronic, and medical parts, as well as in other areas of consumer interest, such as jewelry and toys. For aerospace applications, the Rapid ToolMaker enables fabrication of high-quality turbine and compressor blades for jet engines on unmanned air vehicles, aircraft, and missiles.

Ultimate intra-wafer critical dimension uniformity control by using lithography and etch tool corrections

Science.gov (United States)

Kubis, Michael; Wise, Rich; Reijnen, Liesbeth; Viatkina, Katja; Jaenen, Patrick; Luca, Melisa; Mernier, Guillaume; Chahine, Charlotte; Hellin, David; Kam, Benjamin; Sobieski, Daniel; Vertommen, Johan; Mulkens, Jan; Dusa, Mircea; Dixit, Girish; Shamma, Nader; Leray, Philippe

2016-03-01

With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD uniformity of the final pattern requires a holistic tuning of all process steps. In previous work, CD control with either litho cluster or etch tool corrections has been discussed. Today, we present a holistic CD control approach, combining the correction capability of the etch tool with the correction capability of the exposure tool. The study is done on 10-nm logic node wafers, processed with a test vehicle stack patterning sequence. We include wafer-to-wafer and lot-to-lot variation and apply optical scatterometry to characterize the fingerprints. Making use of all available correction capabilities (lithography and etch), we investigated single application of exposure tool corrections and of etch tool corrections as well as combinations of both to reach the lowest CD uniformity. Results of the final pattern uniformity based on single and combined corrections are shown. We conclude on the application of this holistic lithography and etch optimization to 7nm High-Volume manufacturing, paving the way to ultimate within-wafer CD uniformity control.

Installation and initial operation of the Suss Advanced Lithography Model 4 X-ray Stepper

International Nuclear Information System (INIS)

Wells, G.M.; Wallace, J.P.; Brodsky, E.L.; Leonard, Q.J.; Reilly, M.T.; Anderson, P.D.; Lee, W.K.; Cerrina, F.; Simon, K.

1996-01-01

A Suss Advanced Lithography X-ray Stepper designed as a production tool for high throughput in the sub-quarter-micron device range has been installed and is being commissioned at the University of Wisconsin close-quote s Center for X-ray Lithography (CXrL). Illumination for the stepper is provided by a scanning beamline designed and constructed at CXrL. The beamline optical components are a gold-coated plane mirror, a 1-micron-thick silicon carbide window, and a 25-micron-thick beryllium exit window. Beamline features include synchronized scanning of the mirror and exit window, variable scan velocity to compensate for reflectivity changes as a function of incident angle, and a horizontal oscillation of the beryllium window during vertical scanning to average the effects of nonuniform beryllium window transmission. A helium purged snout transports the x-rays from the beamline exit window, to the exposure plane in the stepper. This snout is retractable to allow for the loading and unloading of masks into the stepper. The motions of the mirror, exit window, and snout are computer controlled by a LABVIEW program that communicates with the stepper control software. The design of the beamline and initial operating experiences with the beamline and stepper will be discussed. copyright 1996 American Institute of Physics

Rapid prototyping: een veelbelovende methode

NARCIS (Netherlands)

Haverman, T.M.; Karagozoglu, K.H.; Prins, H.; Schulten, E.A.J.M.; Forouzanfar, T.

2013-01-01

Rapid prototyping is a method which makes it possible to produce a three-dimensional model based on two-dimensional imaging. Various rapid prototyping methods are available for modelling, such as stereolithography, selective laser sintering, direct laser metal sintering, two-photon polymerization,

Fabrication of three-dimensional millimeter-height structures using direct ultraviolet lithography on liquid-state photoresist for simple and fast manufacturing

Science.gov (United States)

Kim, Jungkwun; Yoon, Yong-Kyu

2015-07-01

A rapid three-dimensional (3-D) ultraviolet (UV) lithography process for the fabrication of millimeter-tall high aspect ratio complex structures is presented. The liquid-state negative-tone photosensitive polyurethane, LF55GN, has been directly photopatterned using multidirectionally projected UV light for 3-D micropattern formation. The proposed lithographic scheme enabled us to overcome the maximum height obtained with a photopatternable epoxy, SU8, which has been conventionally most commonly used for the fabrication of tall and high aspect ratio microstructures. Also, the fabrication process time has been significantly reduced by eliminating photoresist-baking steps. Computer-controlled multidirectional UV lithography has been employed to fabricate 3-D structures, where the UV-exposure substrate is dynamically tilt-rotating during UV exposure to create various 3-D ray traces in the polyurethane layer. LF55GN has been characterized to provide feasible fabrication conditions for the multidirectional UV lithography. Very tall structures including a 6-mm tall triangular slab and a 5-mm tall hexablaze have been successfully fabricated. A 4.5-mm tall air-lifted polymer-core bowtie monopole antenna, which is the tallest monopole structure fabricated by photolithography and subsequent metallization, has been successfully demonstrated. The antenna shows a resonant radiation frequency of 12.34 GHz, a return loss of 36 dB, and a 10 dB bandwidth of 7%.

Field evaluation of prototype electrofibrous filters

International Nuclear Information System (INIS)

Kuhl, W.D.; Bergman, W.; Biermann, A.H.; Lum, B.Y.

1982-01-01

New prototype electrofibrous filters were designed, built and evaluated in laboratory tests and in field installations. Two prototypes were designed for use in nuclear ventilation ducts as prefilters to HEPA filters. One prototype is designed to be a permanent component of the ventilation system while the other is a disposable unit. The disposable electrofibrous prefilter was installed in the exhaust stream of a glove box in which barrels of uranium turnings are burned. Preliminary tests show the disposal prefilter is effectively prolonging the HEPA filter life. An earlier prototype of the rolling prefilter was upgraded to meet the increased requirements for installation in a nuclear facility. This upgraded prototype was evaluated in the fire test facility at LLNL and shown to be effective in protecting HEPA filters from plugging under the most severe smoke conditions. The last prototype described in this report is a recirculating air filter. After demonstrating a high performance in laboratory tests the unit was shipped to Savannah River where it is awaiting installation in a Pu fuel fabrication facility. An analysis of the particulate problem in Savannah River indicates that four recirculating air filter will save $172,000 per year in maintenance costs

Weak interfaces for UV cure nanoimprint lithography

Science.gov (United States)

Houle, Frances; Fornof, Ann; Simonyi, Eva; Miller, Dolores; Truong, Hoa

2008-03-01

Nanoimprint lithography using a photocurable organic resist provides a means of patterning substrates with a spatial resolution in the few nm range. The usefulness of the technique is limited by defect generation during template removal, which involves fracture at the interface between the template and the newly cured polymer. Although it is critical to have the lowest possible interfacial fracture toughness (Gc less than 0.1 Jm-2) to avoid cohesive failure in the polymer, there is little understanding on how to achieve this using reacting low viscosity resist fluids. Studies of debonding of a series of free-radical cured polyhedral silsesquioxane crosslinker formulations containing selected reactive diluents from fluorosilane-coated quartz template materials will be described. At constant diluent fraction the storage modulus of cured resists follows trends in initial reaction rate, not diluent Tg. Adhesion is uncorrelated with both Tg and storage modulus. XPS studies of near-interface compositions indicate that component segregation within the resist fluid on contact with the template, prior to cure, plays a significant role in controlling the fracture process.

Window prototypes during the project

DEFF Research Database (Denmark)

Schultz, Jørgen Munthe

1996-01-01

The conditions for the PASSYS test and the results of the measurements on one of the aerogel window prototypes are described.......The conditions for the PASSYS test and the results of the measurements on one of the aerogel window prototypes are described....

The fabrication of a carbon nanotube array using a catalyst-poisoning layer in the inverse nano-sphere lithography method

International Nuclear Information System (INIS)

Tsai, Tsung-Yen; Chen, Tsung-Han; Tai, Nyan-Hwa; Chang, Shih-Chin; Hsu, Hui-Chen; Joseph Palathinkal, Thomas

2009-01-01

A new method for the fabrication of periodic CNT arrays was developed in this study, which involves the use of the inverse nano-sphere lithography (INSL) process. Mo of a honeycomb pattern, acting as a catalyst-poisoning layer, was produced by the nano-sphere lithography (NSL) process; the Mo poisoned the catalyst and prevented CNT growth where deposited, and as a result, a periodic CNT pattern was obtained. Using this method, the uniformity of the CNT array can be improved by preventing the negative effect of arrangement defects in self-assembled monolayers. The size and the period of the CNT array can be adjusted by careful selection of the polystyrene (PS) sphere diameter. X-ray photoelectron spectroscope (XPS) analysis revealed that the Co catalyst was ineffective on the areas of Mo deposition due to the diffusion of Co into the Mo layer.

The fabrication of a carbon nanotube array using a catalyst-poisoning layer in the inverse nano-sphere lithography method

Energy Technology Data Exchange (ETDEWEB)

Tsai, Tsung-Yen; Chen, Tsung-Han; Tai, Nyan-Hwa; Chang, Shih-Chin; Hsu, Hui-Chen; Joseph Palathinkal, Thomas, E-mail: nhtai@mx.nthu.edu.t [Department of Materials Science and Engineering, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan (China)

2009-07-29

A new method for the fabrication of periodic CNT arrays was developed in this study, which involves the use of the inverse nano-sphere lithography (INSL) process. Mo of a honeycomb pattern, acting as a catalyst-poisoning layer, was produced by the nano-sphere lithography (NSL) process; the Mo poisoned the catalyst and prevented CNT growth where deposited, and as a result, a periodic CNT pattern was obtained. Using this method, the uniformity of the CNT array can be improved by preventing the negative effect of arrangement defects in self-assembled monolayers. The size and the period of the CNT array can be adjusted by careful selection of the polystyrene (PS) sphere diameter. X-ray photoelectron spectroscope (XPS) analysis revealed that the Co catalyst was ineffective on the areas of Mo deposition due to the diffusion of Co into the Mo layer.

Reactive Imprint Lithography: Combined Topographical Patterning and Chemical Surface Functionalization of Polystyrene-block-poly(tert-butyl acrylate) Films

NARCIS (Netherlands)

Duvigneau, Joost; Cornelissen, Stijn; Bardajı´Valls, Nuria; Schönherr, Holger; Vancso, Gyula J.

2009-01-01

Here, reactive imprint lithography (RIL) is introduced as a new, one-step lithographic tool for the fabrication of large-area topographically patterned, chemically activated polymer platforms. Films of polystyrene-block-poly(tert-butyl acrylate) (PS-b-PtBA) are imprinted with PDMS master stamps at

Test case preparation using a prototype

OpenAIRE

Treharne, Helen; Draper, J.; Schneider, Steve A.

1998-01-01

This paper reports on the preparation of test cases using a prototype within the context of a formal development. It describes an approach to building a prototype using an example. It discusses how a prototype contributes to the testing activity as part of a lifecycle based on the use of formal methods. The results of applying the approach to an embedded avionics case study are also presented.

Rapid prototyping and stereolithography in dentistry

Science.gov (United States)

Nayar, Sanjna; Bhuminathan, S.; Bhat, Wasim Manzoor

2015-01-01

The word rapid prototyping (RP) was first used in mechanical engineering field in the early 1980s to describe the act of producing a prototype, a unique product, the first product, or a reference model. In the past, prototypes were handmade by sculpting or casting, and their fabrication demanded a long time. Any and every prototype should undergo evaluation, correction of defects, and approval before the beginning of its mass or large scale production. Prototypes may also be used for specific or restricted purposes, in which case they are usually called a preseries model. With the development of information technology, three-dimensional models can be devised and built based on virtual prototypes. Computers can now be used to create accurately detailed projects that can be assessed from different perspectives in a process known as computer aided design (CAD). To materialize virtual objects using CAD, a computer aided manufacture (CAM) process has been developed. To transform a virtual file into a real object, CAM operates using a machine connected to a computer, similar to a printer or peripheral device. In 1987, Brix and Lambrecht used, for the first time, a prototype in health care. It was a three-dimensional model manufactured using a computer numerical control device, a type of machine that was the predecessor of RP. In 1991, human anatomy models produced with a technology called stereolithography were first used in a maxillofacial surgery clinic in Viena. PMID:26015715

Rapid prototyping and stereolithography in dentistry.

Science.gov (United States)

Nayar, Sanjna; Bhuminathan, S; Bhat, Wasim Manzoor

2015-04-01

The word rapid prototyping (RP) was first used in mechanical engineering field in the early 1980s to describe the act of producing a prototype, a unique product, the first product, or a reference model. In the past, prototypes were handmade by sculpting or casting, and their fabrication demanded a long time. Any and every prototype should undergo evaluation, correction of defects, and approval before the beginning of its mass or large scale production. Prototypes may also be used for specific or restricted purposes, in which case they are usually called a preseries model. With the development of information technology, three-dimensional models can be devised and built based on virtual prototypes. Computers can now be used to create accurately detailed projects that can be assessed from different perspectives in a process known as computer aided design (CAD). To materialize virtual objects using CAD, a computer aided manufacture (CAM) process has been developed. To transform a virtual file into a real object, CAM operates using a machine connected to a computer, similar to a printer or peripheral device. In 1987, Brix and Lambrecht used, for the first time, a prototype in health care. It was a three-dimensional model manufactured using a computer numerical control device, a type of machine that was the predecessor of RP. In 1991, human anatomy models produced with a technology called stereolithography were first used in a maxillofacial surgery clinic in Viena.

Patterned self-assembled monolayers for nanoscale lithography and the control of catalytically produced electroosmosis

Science.gov (United States)

Subramanian, Shyamala

This thesis explores two applications of self-assembled monolayers (SAMs) (a) for developing novel molecular assembly based nanolithography techniques and (b) for tailoring zeta-potential of surfaces towards achieving directional control of catalytically induced fluid flow. The first half of the thesis develops the process of molecular ruler lithography using sacrificial host structures. This is a novel hybrid nanolithography technique which combines chemical self-assembly with conventional fabrication methods for improving the resolution of existing lithography tools to sub-50 nm. Previous work related to molecular ruler lithography have shown the use of thiol-SAMs, placed one on top of the other like a molecular resist, for scaling down feature sizes. In this thesis various engineering solutions for improving the reproducibility, yield, nanoscale roughness and overall manufacturability of the process are introduced. This is achieved by introducing a sacrificial inert layer underneath the gold parent structure. This bilayer sacrificial host allows for preferential, easy and quick removal of the parent structures, isolates the parent metal from the underlying substrate and improves reproducibility of the lift-off process. Also it opens avenues for fabrication of high aspect ratio features. Also molecular layer vapor deposition method is developed for building the multilayer molecular resist via vapor phase to reduce contaminations and yield issues associated with solution phase deposition. The smallest isolated metal features produced using this process were 40 nm in width. The second half of the thesis describes application of thiol-SAMs to tailor surface properties of gold, specifically the surface charge or zeta potential. Previous work has demonstrated that the direction of movement of fluid in the vicinity of a catalytically active bimetallic junction placed in a solution of dilute hydrogen peroxide depends on the charge of the gold surface. SAMs with

Role model and prototype matching

DEFF Research Database (Denmark)

Lykkegaard, Eva; Ulriksen, Lars

2016-01-01

’ meetings with the role models affected their thoughts concerning STEM students and attending university. The regular self-to-prototype matching process was shown in real-life role-models meetings to be extended to a more complex three-way matching process between students’ self-perceptions, prototype...

High confidence in falsely recognizing prototypical faces.

Science.gov (United States)

Sampaio, Cristina; Reinke, Victoria; Mathews, Jeffrey; Swart, Alexandra; Wallinger, Stephen

2018-06-01

We applied a metacognitive approach to investigate confidence in recognition of prototypical faces. Participants were presented with sets of faces constructed digitally as deviations from prototype/base faces. Participants were then tested with a simple recognition task (Experiment 1) or a multiple-choice task (Experiment 2) for old and new items plus new prototypes, and they showed a high rate of confident false alarms to the prototypes. Confidence and accuracy relationship in this face recognition paradigm was found to be positive for standard items but negative for the prototypes; thus, it was contingent on the nature of the items used. The data have implications for lineups that employ match-to-suspect strategies.

Fabrication of large area homogeneous metallic nanostructures for optical sensing using colloidal lithography

DEFF Research Database (Denmark)

Eriksen, René Lynge; Pors, Anders; Dreier, Jes

2010-01-01

We propose a simple and reproducible method for fabricating large area metal films with inter-connected nanostructures using a combination of colloidal lithography, metal deposition and a template stripping technique. The method is generic in the sense that it is possible to produce a variety...... to fabricate metal films with inter-connected nanostructures consisting of either partial spherical shells or the inverted structures: spherical cavities. The substrates are characterized by optical reflectance and transmittance spectroscopy. We demonstrate, in the case of partial spherical shells...

Prototype effect and the persuasiveness of generalizations

OpenAIRE

Dahlman, Christian; Sarwar, Farhan; Bååth, Rasmus; Wahlberg, Lena; Sikström, Sverker

2015-01-01

An argument that makes use of a generalization activates the prototype for the category used in the generalization. We conducted two experiments that investigated how the activation of the prototype affects the persuasiveness of the argument. The results of the experiments suggest that the features of the prototype overshadow and partly overwrite the actual facts of the case. The case is, to some extent, judged as if it had the features of the prototype instead of the features it actually ...

Joint optimization of source, mask, and pupil in optical lithography

Science.gov (United States)

Li, Jia; Lam, Edmund Y.

2014-03-01

Mask topography effects need to be taken into consideration for more advanced resolution enhancement techniques in optical lithography. However, rigorous 3D mask model achieves high accuracy at a large computational cost. This work develops a combined source, mask and pupil optimization (SMPO) approach by taking advantage of the fact that pupil phase manipulation is capable of partially compensating for mask topography effects. We first design the pupil wavefront function by incorporating primary and secondary spherical aberration through the coefficients of the Zernike polynomials, and achieve optimal source-mask pair under the condition of aberrated pupil. Evaluations against conventional source mask optimization (SMO) without incorporating pupil aberrations show that SMPO provides improved performance in terms of pattern fidelity and process window sizes.

Uniformity across 200 mm silicon wafers printed by nanoimprint lithography

International Nuclear Information System (INIS)

Gourgon, C; Perret, C; Tallal, J; Lazzarino, F; Landis, S; Joubert, O; Pelzer, R

2005-01-01

Uniformity of the printing process is one of the key parameters of nanoimprint lithography. This technique has to be extended to large size wafers to be useful for several industrial applications, and the uniformity of micro and nanostructures has to be guaranteed on large surfaces. This paper presents results of printing on 200 mm diameter wafers. The residual thickness uniformity after printing is demonstrated at the wafer scale in large patterns (100 μm), in smaller lines of 250 nm and in sub-100 nm features. We show that a mould deformation occurs during the printing process, and that this deformation is needed to guarantee printing uniformity. However, the mould deformation is also responsible for the potential degradation of the patterns

A poly(dimethylsiloxane)-coated flexible mold for nanoimprint lithography

International Nuclear Information System (INIS)

Lee, Nae Yoon; Kim, Youn Sang

2007-01-01

In this paper, we introduce an anti-adhesion poly(dimethylsiloxane) (PDMS)-coated flexible mold and its applications for room-temperature imprint lithography. The flexible mold is fabricated using an ultraviolet-curable prepolymer on a flexible substrate, and its surface is passivated with a thin layer of PDMS to impart an anti-adhesion property. The highly flexible mold enables conformal contact with a substrate on which a low-viscosity polymer resist is spin-cast in a thin layer. Large-area imprinting is then realized at room temperature under significantly reduced pressure. The mold was durable even after repetitive imprinting of over 200 times. Also, we show a double imprinting on the substrate with a PDMS-coated replica polymeric mold having 500 nm line patterns. This enables the formation of matrix patterns with varying feature heights in less than 7 min

Window-assisted nanosphere lithography for vacuum micro-nano-electronics

International Nuclear Information System (INIS)

Li, Nannan; Pang, Shucai; Yan, Fei; Chen, Lei; Jin, Dazhi; Xiang, Wei; Zhang, De; Zeng, Baoqing

2015-01-01

Development of vacuum micro-nano-electronics is quite important for combining the advantages of vacuum tubes and solid-state devices but limited by the prevailing fabricating techniques which are expensive, time consuming and low-throughput. In this work, window-assisted nanosphere lithography (NSL) technique was proposed and enabled the low-cost and high-efficiency fabrication of nanostructures for vacuum micro-nano-electronic devices, thus allowing potential applications in many areas. As a demonstration, we fabricated high-density field emitter arrays which can be used as cold cathodes in vacuum micro-nano-electronic devices by using the window-assisted NSL technique. The details of the fabricating process have been investigated. This work provided a new and feasible idea for fabricating nanostructure arrays for vacuum micro-nano-electronic devices, which would spawn the development of vacuum micro-nano-electronics

Polystyrene negative resist for high-resolution electron beam lithography

Directory of Open Access Journals (Sweden)

Ma Siqi

2011-01-01

Full Text Available Abstract We studied the exposure behavior of low molecular weight polystyrene as a negative tone electron beam lithography (EBL resist, with the goal of finding the ultimate achievable resolution. It demonstrated fairly well-defined patterning of a 20-nm period line array and a 15-nm period dot array, which are the densest patterns ever achieved using organic EBL resists. Such dense patterns can be achieved both at 20 and 5 keV beam energies using different developers. In addition to its ultra-high resolution capability, polystyrene is a simple and low-cost resist with easy process control and practically unlimited shelf life. It is also considerably more resistant to dry etching than PMMA. With a low sensitivity, it would find applications where negative resist is desired and throughput is not a major concern.

Rapid Prototyping: An Alternative Instructional Design Strategy.

Science.gov (United States)

Tripp, Steven D.; Bichelmeyer, Barbara

1990-01-01

Discusses the nature of instructional design and describes rapid prototyping as a feasible model for instructional system design (ISD). The use of prototyping in software engineering is described, similarities between software design and instructional design are discussed, and an example is given which uses rapid prototyping in designing a…

Closed-looped in situ nano processing on a culturing cell using an inverted electron beam lithography system

International Nuclear Information System (INIS)

Hoshino, Takayuki; Mabuchi, Kunihiko

2013-01-01

Highlights: ► An electron beam lithography (EBL) was used as an in situ nano processing for a living cell. ► A synchronized optics was containing an inverted EBL and an optical microscope. ► This system visualized real-time images of the EB-induced nano processing. ► We demonstrated the nano processing for a culturing cell with 200–300 nm resolution. ► Our system would be able to provide high resolution display of virtual environments. -- Abstract: The beam profile of an electron beam (EB) can be focused onto less than a nanometer spot and scanned over a wide field with extremely high speed sweeping. Thus, EB is employed for nano scale lithography in applied physics research studies and in fabrication of semiconductors. We applied a scanning EB as a control system for a living cell membrane which is representative of large scale complex systems containing nanometer size components. First, we designed the opposed co-axial dual optics containing inverted electron beam lithography (I-EBL) system and a fluorescent optical microscope. This system could provide in situ nano processing for a culturing living cell on a 100-nm-thick SiN nanomembrane, which was placed between the I-EBL and the fluorescent optical microscope. Then we demonstrated the EB-induced chemical direct nano processing for a culturing cell with hundreds of nanometer resolution and visualized real-time images of the scanning spot of the EB-induced luminescent emission and chemical processing using a high sensitive camera mounted on the optical microscope. We concluded that our closed-loop in situ nano processing would be able to provide a nanometer resolution display of virtual molecule environments to study functional changes of bio-molecule systems

Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography

Science.gov (United States)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-03-01

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity (S or best energy BE) and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (LRS trade-off) among these parameters for chemically amplified resists (CARs). Here we present early proof-of-principle results for a multi-exposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a Photosensitized Chemically Amplified Resist (PSCAR). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV flood exposure (λ = 365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR and EL high performance requirements with the aim of resolving line space (L/S) features for the 7 and 5 nm logic node (16 nm and 13 nm half-pitch HP, respectively) for HVM. Several CARs were additionally found to be well resolved down to 12 nm and 11 nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and

Flexible method based on four-beam interference lithography for fabrication of large areas of perfectly periodic plasmonic arrays

Czech Academy of Sciences Publication Activity Database

Vala, Milan; Homola, Jiří

2014-01-01

Roč. 22, č. 15 (2014), s. 18778-18789 ISSN 1094-4087 R&D Projects: GA ČR GBP205/12/G118 Institutional support: RVO:67985882 Keywords : Interference lithography * Polymer substrate * Four-beam interference Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.488, year: 2014

A Computer-Based, Interactive Videodisc Job Aid and Expert System for Electron Beam Lithography Integration and Diagnostic Procedures.

Science.gov (United States)

Stevenson, Kimberly

This master's thesis describes the development of an expert system and interactive videodisc computer-based instructional job aid used for assisting in the integration of electron beam lithography devices. Comparable to all comprehensive training, expert system and job aid development require a criterion-referenced systems approach treatment to…

Demonstration of electronic design automation flow for massively parallel e-beam lithography

Science.gov (United States)

Brandt, Pieter; Belledent, Jérôme; Tranquillin, Céline; Figueiro, Thiago; Meunier, Stéfanie; Bayle, Sébastien; Fay, Aurélien; Milléquant, Matthieu; Icard, Beatrice; Wieland, Marco

2014-07-01

For proximity effect correction in 5 keV e-beam lithography, three elementary building blocks exist: dose modulation, geometry (size) modulation, and background dose addition. Combinations of these three methods are quantitatively compared in terms of throughput impact and process window (PW). In addition, overexposure in combination with negative bias results in PW enhancement at the cost of throughput. In proximity effect correction by over exposure (PEC-OE), the entire layout is set to fixed dose and geometry sizes are adjusted. In PEC-dose to size (DTS) both dose and geometry sizes are locally optimized. In PEC-background (BG), a background is added to correct the long-range part of the point spread function. In single e-beam tools (Gaussian or Shaped-beam), throughput heavily depends on the number of shots. In raster scan tools such as MAPPER Lithography's FLX 1200 (MATRIX platform) this is not the case and instead of pattern density, the maximum local dose on the wafer is limiting throughput. The smallest considered half-pitch is 28 nm, which may be considered the 14-nm node for Metal-1 and the 10-nm node for the Via-1 layer, achieved in a single exposure with e-beam lithography. For typical 28-nm-hp Metal-1 layouts, it was shown that dose latitudes (size of process window) of around 10% are realizable with available PEC methods. For 28-nm-hp Via-1 layouts this is even higher at 14% and up. When the layouts do not reach the highest densities (up to 10∶1 in this study), PEC-BG and PEC-OE provide the capability to trade throughput for dose latitude. At the highest densities, PEC-DTS is required for proximity correction, as this method adjusts both geometry edges and doses and will reduce the dose at the densest areas. For 28-nm-hp lines critical dimension (CD), hole&dot (CD) and line ends (edge placement error), the data path errors are typically 0.9, 1.0 and 0.7 nm (3σ) and below, respectively. There is not a clear data path performance difference between

A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography

Science.gov (United States)

Mingyan, Yu; Shirui, Zhao; Yupeng, Jing; Yunbo, Shi; Baoqin, Chen

2014-12-01

Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1 solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate, such as high density biochips, flexible electronics and liquid crystal display screens.

16 CFR 1633.4 - Prototype testing requirements.

Science.gov (United States)

2010-01-01

... 16 Commercial Practices 2 2010-01-01 2010-01-01 false Prototype testing requirements. 1633.4... STANDARD FOR THE FLAMMABILITY (OPEN FLAME) OF MATTRESS SETS The Standard § 1633.4 Prototype testing... three specimens of each prototype to be tested according to § 1633.7 and obtain passing test results...

Close encounters of the prototype kind

CERN Multimedia

2005-01-01

CERN is building a new control centre for the operation of its entire accelerator complex and technical infrastructure. The prototype console for the new centre has just been installed and tested. Close encounters of the prototype kind CERN is building a new control centre for the operation of its entire accelerator complex and technical infrastructure. The prototype console for the new centre has just been installed and tested. The prototype of the control consoles that will be at the heart of the future CERN Control Centre (CCC) has just been installed in the Roy Billinge Room in Building 354. Until now, there have been four separate control rooms for the CERN accelerators and technical infrastructure. The CCC, which will be located on the Prévessin site, will bring them all together in a single room. The Centre will consist of 40 consoles for four different areas (LHC, SPS, PS complex and technical infrastructure). The prototype was tested by the technicians for a month. Following installation and con...

Characterization of Bragg gratings in Al2O3 waveguides fabricated by focused ion beam milling and laser interference lithography

NARCIS (Netherlands)

Ay, F.; Bernhardi, Edward; Agazzi, L.; Bradley, J.; Worhoff, Kerstin; Pollnau, Markus; de Ridder, R.M.

Optical grating cavities in Al2O3 channel waveguides were successfully defined by focused ion beam milling and laser interference lithography. Both methods are shown to be suitable for realizing resonant structures for on-chip waveguide lasers.

46 CFR 161.013-11 - Prototype test.

Science.gov (United States)

2010-10-01

... 46 Shipping 6 2010-10-01 2010-10-01 false Prototype test. 161.013-11 Section 161.013-11 Shipping...: SPECIFICATIONS AND APPROVAL ELECTRICAL EQUIPMENT Electric Distress Light for Boats § 161.013-11 Prototype test. (a) Each manufacturer must test a prototype light identical to the lights to be certified prior to...

Designing Instructor-Led Schools with Rapid Prototyping.

Science.gov (United States)

Lange, Steven R.; And Others

1996-01-01

Rapid prototyping involves abandoning many of the linear steps of traditional prototyping; it is instead a series of design iterations representing each major stage. This article describes the development of an instructor-led course for midlevel auditors using the principles and procedures of rapid prototyping, focusing on the savings in time and…

Metrology study of high precision mm parts made by the deep x-ray lithography (LIGA) technique

International Nuclear Information System (INIS)

Mäder, Olaf; Meyer, Pascal; Saile, Volker; Schulz, Joachim

2009-01-01

Microcomponents are increasingly applied in industrial products, e.g. smallest gears, springs or the watch industry. Apart from their small dimensions, such components are characterized by a high contour accuracy. Industry requires the tolerances to be in the µm range. Measurement of lateral dimensions in the mm range with submicrometer accuracy and precision, however, results in high requirements on measurement technology. The relevance of this problem is illustrated by the fact that the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) has launched the Collaborative Research Center 1159 on 'New Strategies of Measurement and Inspection for the Production of Microsystems and Nanostructures'. The Institut für Mikrostrukturtechnik, Karlsruhe (Institute of Microstructure Technology, Karlsruhe), produces microstructures by means of the LIG(A) technique (German acronym for lithography, electrodeposition, molding). Presently, a coordinate measurement machine equipped with an optical fiber probe to measure these microstructures is being tested. This paper will particularly focus on the precision and accuracy of the machine. The rules of measurement system analysis will be applied for this purpose. Following the elimination of the systematic error, reproducibility of deep-etch x-ray lithography will be highlighted using the LIGA production of gold gears as an example

Depth control of a silicon structure fabricated by 100q keV Ar ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Kawasegi, Noritaka [Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: kawasegi@eng.u-toyama.ac.jp; Morita, Noboru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: nmorita@eng.u-toyama.ac.jp; Yamada, Shigeru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: syamada@eng.u-toyama.ac.jp; Takano, Noboru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: takano@eng.u-toyama.ac.jp; Oyama, Tatsuo [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: ohyama@eng.u-toyama.ac.jp; Momota, Sadao [Department of Intelligent Mechanical Systems Engineering, Kochi University of Technology, 185 Tosayamada, Kami, Kochi 782-8502 (Japan)]. E-mail: momota.sadao@kochi-tech.ac.jp; Taniguchi, Jun [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan)]. E-mail: junt@te.noda.tus.ac.jp; Miyamoto, Iwao [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan)]. E-mail: iwao@te.noda.tus.ac.jp

2007-01-15

Ion beam lithography of a silicon surface using an Ar ion beam with an ion energy in the order of hundreds of keV is demonstrated in this study. A specially designed ion irradiation facility was employed that enabled generation and irradiation with a highly accelerated and highly charged Ar ion beam. An ion-beam-induced amorphous layer on a silicon substrate can be selectively etched in hydrofluoric acid, whereas, a non-irradiated area is scarcely etched and, consequently, a concave structure can be fabricated on the irradiated area. To control the depth of the structure, parameters for dependence of the depth on ion irradiation were investigated. As a result, the depth of irradiated area can be controlled by the ion energy that is adjusted by the acceleration voltage and the ion charge. In addition, the etch resistance of the irradiated area increases with an increase in ion energy due to the crystalline layer formed on the surface. Simulation results reveal that the depth is strongly related to the defect distribution induced by ion irradiation. These results indicate the potential use of this method for novel three-dimensional lithography.

Facile fabrication of microfluidic surface-enhanced Raman scattering devices via lift-up lithography

Science.gov (United States)

Wu, Yuanzi; Jiang, Ye; Zheng, Xiaoshan; Jia, Shasha; Zhu, Zhi; Ren, Bin; Ma, Hongwei

2018-04-01

We describe a facile and low-cost approach for a flexibly integrated surface-enhanced Raman scattering (SERS) substrate in microfluidic chips. Briefly, a SERS substrate was fabricated by the electrostatic assembling of gold nanoparticles, and shaped into designed patterns by subsequent lift-up soft lithography. The SERS micro-pattern could be further integrated within microfluidic channels conveniently. The resulting microfluidic SERS chip allowed ultrasensitive in situ SERS monitoring from the transparent glass window. With its advantages in simplicity, functionality and cost-effectiveness, this method could be readily expanded into optical microfluidic fabrication for biochemical applications.

Low-Cost Fabrication of Hollow Microneedle Arrays Using CNC Machining and UV Lithography

DEFF Research Database (Denmark)

Lê Thanh, Hoà; Ta, B.Q.; Le The, H.

2015-01-01

In order to produce disposable microneedles for blood-collection devices in smart homecare monitoring systems, we have developed a simple low-cost scalable process for mass fabrication of sharp-tipped microneedle arrays. The key feature in this process is a design of computer numerical control......-machined aluminum sample (CAS). The inclined sidewalls on the CAS enable microfabricated traditional-shaped microneedles (TMNs) to be produced in the desired shape. This process provides significant advantages over other methods that use inclined lithography or anisotropic wet etching. TMNs with a length of 1510 mu...

Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography

KAUST Repository

Tu, Kun-Hua; Fernandez Martin, Eduardo; almasi, hamid; Wang, Weigang; Navas Otero, David; Ntetsikas, Konstantinos; Moschovas, Dimitrios; Avgeropoulos, Apostolos; Ross, Caroline A

2018-01-01

Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different

From powerful research platform for industrial EUV photoresist development, to world record resolution by photolithography: EUV interference lithography at the Paul Scherrer Institute

Science.gov (United States)

Buitrago, Elizabeth; Fallica, Roberto; Fan, Daniel; Karim, Waiz; Vockenhuber, Michaela; van Bokhoven, Jeroen A.; Ekinci, Yasin

2016-09-01

Extreme ultraviolet interference lithography (EUV-IL, λ = 13.5 nm) has been shown to be a powerful technique not only for academic, but also for industrial research and development of EUV materials due to its relative simplicity yet record high-resolution patterning capabilities. With EUV-IL, it is possible to pattern high-resolution periodic images to create highly ordered nanostructures that are difficult or time consuming to pattern by electron beam lithography (EBL) yet interesting for a wide range of applications such as catalysis, electronic and photonic devices, and fundamental materials analysis, among others. Here, we will show state-of the-art research performed using the EUV-IL tool at the Swiss Light Source (SLS) synchrotron facility in the Paul Scherrer Institute (PSI). For example, using a grating period doubling method, a diffraction mask capable of patterning a world record in photolithography of 6 nm half-pitch (HP), was produced. In addition to the description of the method, we will give a few examples of applications of the technique. Well-ordered arrays of suspended silicon nanowires down to 6.5 nm linewidths have been fabricated and are to be studied as field effect transistors (FETs) or biosensors, for instance. EUV achromatic Talbot lithography (ATL), another interference scheme that utilizes a single grating, was shown to yield well-defined nanoparticles over large-areas with high uniformity presenting great opportunities in the field of nanocatalysis. EUV-IL is in addition, playing a key role in the future introduction of EUV lithography into high volume manufacturing (HVM) of semiconductor devices for the 7 and 5 nm logic node (16 nm and 13 nm HP, respectively) and beyond while the availability of commercial EUV-tools is still very much limited for research.

The OPAL vertex detector prototype

International Nuclear Information System (INIS)

Roney, J.M.; Armitage, J.C.; Carnegie, R.K.; Giles, G.L.; Hemingway, R.J.; McPherson, A.C.; Pinfold, J.L.; Waterhouse, J.; Godfrey, L.; Hargrove, C.K.

1989-01-01

The prototype test results of a high resolution charged particle tracking detector are reported. The detector is designed to measure vertex topologies of particles produced in the e + e - collisions of the OPAL experiment at LEP. The OPAL vertex detector is a 1 m long, 0.46 m diameter cylindrical drift chamber consisting of an axial and stereo layer each of which is divided into 36 jet cells. A prototype chamber containing four axial and two stereo cells was studied using a pion test beam at CERN. The studies examined the prototype under a variety of operating conditions. An r-Φ resolution of 60 μm was obtained when the chamber was operated with argon (50%)-ethane (50%) at 3.75 bar, and when CO 2 (80%)-isobutane (20%) at 2.5 bar was used a 25 μm resolution was achieved. A z measurement using end-to-end time difference has a resolution of 3.5 cm. The details of these prototype studies are discussed in this paper. (orig.)

Rule-based emergency action level monitor prototype

International Nuclear Information System (INIS)

Touchton, R.A.; Gunter, A.D.; Cain, D.

1985-01-01

In late 1983, the Electric Power Research Institute (EPRI) began a program to encourage and stimulate the development of artificial intelligence (AI) applications for the nuclear industry. Development of a rule-based emergency action level classification system prototype is discussed. The paper describes both the full prototype currently under development and the completed, simplified prototype

An Empirical Investigation of Architectural Prototyping

DEFF Research Database (Denmark)

Christensen, Henrik Bærbak; Hansen, Klaus Marius

2010-01-01

Architectural prototyping is the process of using executable code to investigate stakeholders’ software architecture concerns with respect to a system under development. Previous work has established this as a useful and cost-effective way of exploration and learning of the design space of a system...... and in addressing issues regarding quality attributes, architectural risks, and the problem of knowledge transfer and conformance. However, the actual industrial use of architectural prototyping has not been thoroughly researched so far. In this article, we report from three studies of architectural prototyping...... in practice. First, we report findings from an ethnographic study of practicing software architects. Secondly, we report from a focus group on architectural prototyping involving architects from four companies. And, thirdly, we report from a survey study of 20 practicing software architects and software...

Magnetic Nanoparticles: Material Engineering and Emerging Applications in Lithography and Biomedicine

Science.gov (United States)

Bao, Yuping; Wen, Tianlong; Samia, Anna Cristina S.; Khandhar, Amit; Krishnan, Kannan M.

2015-01-01

We present an interdisciplinary overview of material engineering and emerging applications of iron oxide nanoparticles. We discuss material engineering of nanoparticles in the broadest sense, emphasizing size and shape control, large-area self-assembly, composite/hybrid structures, and surface engineering. This is followed by a discussion of several non-traditional, emerging applications of iron oxide nanoparticles, including nanoparticle lithography, magnetic particle imaging, magnetic guided drug delivery, and positive contrast agents for magnetic resonance imaging. We conclude with a succinct discussion of the pharmacokinetics pathways of iron oxide nanoparticles in the human body –– an important and required practical consideration for any in vivo biomedical application, followed by a brief outlook of the field. PMID:26586919

Broadband interference lithography at extreme ultraviolet and soft x-ray wavelengths.

Science.gov (United States)

Mojarad, Nassir; Fan, Daniel; Gobrecht, Jens; Ekinci, Yasin

2014-04-15

Manufacturing efficient and broadband optics is of high technological importance for various applications in all wavelength regimes. Particularly in the extreme ultraviolet and soft x-ray spectra, this becomes challenging due to the involved atomic absorption edges that rapidly change the optical constants in these ranges. Here we demonstrate a new interference lithography grating mask that can be used for nanopatterning in this spectral range. We demonstrate photolithography with cutting-edge resolution at 6.5 and 13.5 nm wavelengths, relevant to the semiconductor industry, as well as using 2.5 and 4.5 nm wavelength for patterning thick photoresists and fabricating high-aspect-ratio metal nanostructures for plasmonics and sensing applications.

On-wire lithography-generated molecule-based transport junctions: a new testbed for molecular electronics.

Science.gov (United States)

Chen, Xiaodong; Jeon, You-Moon; Jang, Jae-Won; Qin, Lidong; Huo, Fengwei; Wei, Wei; Mirkin, Chad A

2008-07-02

On-wire lithography (OWL) fabricated nanogaps are used as a new testbed to construct molecular transport junctions (MTJs) through the assembly of thiolated molecular wires across a nanogap formed between two Au electrodes. In addition, we show that one can use OWL to rapidly characterize a MTJ and optimize gap size for two molecular wires of different dimensions. Finally, we have used this new testbed to identify unusual temperature-dependent transport mechanisms for alpha,omega-dithiol terminated oligo(phenylene ethynylene).

Multiple beam interference lithography: A tool for rapid fabrication of plasmonic arrays of arbitrary shaped nanomotifs

Czech Academy of Sciences Publication Activity Database

Vala, Milan; Homola, Jiří

2016-01-01

Roč. 24, č. 14 (2016), s. 15656-15665 ISSN 1094-4087 R&D Projects: GA ČR(CZ) GBP205/12/G118 Grant - others:AV ČR(CZ) AP1101 Program:Akademická prémie - Praemium Academiae Institutional support: RVO:67985882 Keywords : displacement talbot lithography * noncoplanar beams * large areas Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.307, year: 2016

Rapid Prototyping and the Human Factors Engineering Process

Science.gov (United States)

2016-08-29

conventional systems development techniques. It is not clear, however, exactly how rapid prototyping could be used in relation to conventional human...factors engineering analyses. Therefore, an investigation of the use of the V APS virtual prototyping system was carried out in five organizations. The...results show that a variety of task analysis approaches can be used to initiate rapid prototyping . Overall, it appears that rapid prototyping

From prototype to product

DEFF Research Database (Denmark)

Andersen, Tariq Osman; Bansler, Jørgen P.; Kensing, Finn

2017-01-01

This paper delves into the challenges of engaging patients, clinicians and industry stakeholders in the participatory design of an mHealth platform for patient-clinician collaboration. It follows the process from the development of a research prototype to a commercial software product. In particu......This paper delves into the challenges of engaging patients, clinicians and industry stakeholders in the participatory design of an mHealth platform for patient-clinician collaboration. It follows the process from the development of a research prototype to a commercial software product....... In particular, we draw attention to four major challenges of (a) aligning the different concerns of patients and clinicians, (b) designing according to clinical accountability, (c) ensuring commercial interest, and (d) dealing with regulatory constraints when prototyping safety critical health Information...... Technology. Using four illustrative cases, we discuss what these challenges entail and the implications they pose to Participatory Design. We conclude the paper by presenting lessons learned....

The development of 8 inch roll-to-plate nanoimprint lithography (8-R2P-NIL) system

Science.gov (United States)

Lee, Lai Seng; Mohamed, Khairudin; Ooi, Su Guan

2017-07-01

Growth in semiconductor and integrated circuit industry was observed in the past decennium of years for industrial technology which followed Moore's law. The line width of nanostructure to be exposed was influenced by the essential technology of photolithography. Thus, it is crucial to have a low cost and high throughput manufacturing process for nanostructures. Nanoimprint Lithography technique invented by Stephen Y. Chou was considered as major nanolithography process to be used in future integrated circuit and integrated optics. The drawbacks of high imprint pressure, high imprint temperature, air bubbles formation, resist sticking to mold and low throughput of thermal nanoimprint lithography on silicon wafer have yet to be solved. Thus, the objectives of this work is to develop a high throughput, low imprint force, room temperature UV assisted 8 inch roll to plate nanoimprint lithography system capable of imprinting nanostructures on 200 mm silicon wafer using roller imprint with flexible mold. A piece of resist spin coated silicon wafer was placed onto vacuum chuck drives forward by a stepper motor. A quartz roller wrapped with a piece of transparent flexible mold was used as imprint roller. The imprinted nanostructures were cured by 10 W, 365 nm UV LED which situated inside the quartz roller. Heat generated by UV LED was dissipated by micro heat pipe. The flexible mold detaches from imprinted nanostructures in a 'line peeling' pattern and imprint pressure was measured by ultra-thin force sensors. This system has imprinting speed capability ranging from 0.19 mm/s to 5.65 mm/s, equivalent to imprinting capability of 3 to 20 pieces of 8 inch wafers per hour. Speed synchronization between imprint roller and vacuum chuck was achieved by controlling pulse rate supplied to stepper motor which drive the vacuum chuck. The speed different ranging from 2 nm/s to 98 nm/s is achievable. Vacuum chuck height was controlled by stepper motor with displacement of 5 nm/step.

Virtual Video Prototyping of Pervasive Healthcare Systems

DEFF Research Database (Denmark)

Bardram, Jakob Eyvind; Bossen, Claus; Madsen, Kim Halskov

2002-01-01

Virtual studio technology enables the mixing of physical and digital 3D objects and thus expands the way of representing design ideas in terms of virtual video prototypes, which offers new possibilities for designers by combining elements of prototypes, mock-ups, scenarios, and conventional video....... In this article we report our initial experience in the domain of pervasive healthcare with producing virtual video prototypes and using them in a design workshop. Our experience has been predominantly favourable. The production of a virtual video prototype forces the designers to decide very concrete design...... issues, since one cannot avoid paying attention to the physical, real-world constraints and to details in the usage-interaction between users and technology. From the users' perspective, during our evaluation of the virtual video prototype, we experienced how it enabled users to relate...

Solid state microcavity dye lasers fabricated by nanoimprint lithography

DEFF Research Database (Denmark)

Nilsson, Daniel; Nielsen, Theodor; Kristensen, Anders

2004-01-01

propagating TE–TM modes. The laser cavity has the lateral shape of a trapezoid, supporting lasing modes by reflection on the vertical cavity walls. The solid polymer dye lasers emit laterally through one of the vertical cavity walls, when pumped optically through the top surface by means of a frequency...... doubled, pulsed Nd:YAG laser. Lasing in the wavelength region from 560 to 570 nm is observed from a laser with a side-length of 50 µm. In this proof of concept, the lasers are multimode with a mode wavelength separation of approximately 1.6 nm, as determined by the waveguide propagation constant......We present a solid state polymer microcavity dye laser, fabricated by thermal nanoimprint lithography (NIL) in a dye-doped thermoplast. The thermoplast poly-methylmethacrylate (PMMA) is used due to its high transparency in the visible range and its robustness to laser radiation. The laser dye...

Nanoparticles with tunable shape and composition fabricated by nanoimprint lithography.

Science.gov (United States)

Alayo, Nerea; Conde-Rubio, Ana; Bausells, Joan; Borrisé, Xavier; Labarta, Amilcar; Batlle, Xavier; Pérez-Murano, Francesc

2015-11-06

Cone-like and empty cup-shaped nanoparticles of noble metals have been demonstrated to provide extraordinary optical properties for use as optical nanoanntenas or nanoresonators. However, their large-scale production is difficult via standard nanofabrication methods. We present a fabrication approach to achieve arrays of nanoparticles with tunable shape and composition by a combination of nanoimprint lithography, hard-mask definition and various forms of metal deposition. In particular, we have obtained arrays of empty cup-shaped Au nanoparticles showing an optical response with distinguishable features associated with the excitations of localized surface plasmons. Finally, this route avoids the most common drawbacks found in the fabrication of nanoparticles by conventional top-down methods, such as aspect ratio limitation, blurring, and low throughput, and it can be used to fabricate nanoparticles with heterogeneous composition.

Nanoparticles with tunable shape and composition fabricated by nanoimprint lithography

International Nuclear Information System (INIS)

Alayo, Nerea; Bausells, Joan; Pérez-Murano, Francesc; Conde-Rubio, Ana; Labarta, Amilcar; Batlle, Xavier; Borrisé, Xavier

2015-01-01

Cone-like and empty cup-shaped nanoparticles of noble metals have been demonstrated to provide extraordinary optical properties for use as optical nanoanntenas or nanoresonators. However, their large-scale production is difficult via standard nanofabrication methods. We present a fabrication approach to achieve arrays of nanoparticles with tunable shape and composition by a combination of nanoimprint lithography, hard-mask definition and various forms of metal deposition. In particular, we have obtained arrays of empty cup-shaped Au nanoparticles showing an optical response with distinguishable features associated with the excitations of localized surface plasmons. Finally, this route avoids the most common drawbacks found in the fabrication of nanoparticles by conventional top-down methods, such as aspect ratio limitation, blurring, and low throughput, and it can be used to fabricate nanoparticles with heterogeneous composition. (paper)

Prototyping a Smart City

DEFF Research Database (Denmark)

Korsgaard, Henrik; Brynskov, Martin

In this paper, we argue that by approaching the so-called Smart City as a design challenge, and an interaction design perspective, it is possible to both uncover existing challenges in the interplay between people, technology and society, as well as prototype possible futures. We present a case...... in which we exposed data about the online communication between the citizens and the municipality on a highly visible media facade, while at the same time prototyped a tool that enabled citizens to report ‘bugs’ within the city....

User prototypes as partly unconscious communication

DEFF Research Database (Denmark)

Glasemann, Marie; Kanstrup, Anne Marie

2010-01-01

In this paper, we introduce user prototypes as a technique that supports users’ articulation of emotions relevant for design: dreams, fears, motivations – their feelings and aspirations. Following Bateson’s writings about communication through art, we consider user prototypes as “partly unconscious...... communication” and propose to analyze them by focusing on the emotional articulations integrated in the users’ design language. We illustrate this with an example from a design research project on designing learning technology for young diabetics. The example shows how young people with diabetes can express...... emotional themes related to youth identity, the burden of being young with a chronic illness, and the need to be connected and feel safe through design of prototypes. The new conceptual space that arises from user prototypes shows potential for addressing emotions when designing for health and for further...

NIF/LMJ prototype amplifier mechanical design

International Nuclear Information System (INIS)

Horvath, J.

1996-10-01

Amplifier prototypes for the National Ignition Facility and the Laser Megajoule will be tested at Lawrence Livermore National Laboratory. The prototype amplifier, which is an ensemble of modules from LLNL and Centre d'Etudes de Limeil-Valenton, is cassette-based with bottom access for maintenance. A sealed maintenance transfer vehicle which moves optical cassettes between the amplifier and the assembly cleanroom, and a vacuum gripper which holds laser slabs during cassette assembly will also be tested. The prototype amplifier will be used to verify amplifier optical performance, thermal recovery time, and cleanliness of mechanical operations

Rapid Prototyping Laboratory

Data.gov (United States)

Federal Laboratory Consortium — The ARDEC Rapid Prototyping (RP) Laboratory was established in December 1992 to provide low cost RP capabilities to the ARDEC engineering community. The Stratasys,...

Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

KAUST Repository

Zong, Baoyu; Goh, J. Y.; Guo, Zaibing; Luo, Ping; Wang, Chenchen; Qiu, Jinjun; Ho, Pin; Chen, Yunjie; Zhang, Mingsheng; Han, Guchang

2013-01-01

A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half

Accuracy and performance of 3D mask models in optical projection lithography

Science.gov (United States)

Agudelo, Viviana; Evanschitzky, Peter; Erdmann, Andreas; Fühner, Tim; Shao, Feng; Limmer, Steffen; Fey, Dietmar

2011-04-01

Different mask models have been compared: rigorous electromagnetic field (EMF) modeling, rigorous EMF modeling with decomposition techniques and the thin mask approach (Kirchhoff approach) to simulate optical diffraction from different mask patterns in projection systems for lithography. In addition, each rigorous model was tested for two different formulations for partially coherent imaging: The Hopkins assumption and rigorous simulation of mask diffraction orders for multiple illumination angles. The aim of this work is to closely approximate results of the rigorous EMF method by the thin mask model enhanced with pupil filtering techniques. The validity of this approach for different feature sizes, shapes and illumination conditions is investigated.

Fabrication of quartz microcylinders by laser interference lithography for angular optical tweezers

Science.gov (United States)

Santybayeva, Zhanna; Meghit, Afaf; Desgarceaux, Rudy; Teissier, Roland; Pichot, Frederic; de Marin, Charles; Charlot, Benoit; Pedaci, Francesco

2016-07-01

The use of optical tweezers (OTs) and spin angular momentum transfer to birefringent particles allows new mechanical measurements in systems where torque and rotation are relevant parameters at the single-molecule level. There is a growing interest in developing simple, fast, and inexpensive protocols to produce a large number of submicron scale cylinders of quartz, a positive uniaxial birefringent crystal, to be employed for such angular measurements in OTs. Here, we show that laser interference lithography, a method well known for its simplicity, fulfills these requirements and produces quartz cylindrical particles that we successfully use to apply and measure optical torque in the piconewton nm range in an optical torque wrench.

Design, synthesis, and characterization of fluorine-free PAGs for 193-nm lithography

Science.gov (United States)

Liu, Sen; Glodde, Martin; Varanasi, Pushkara R.

2010-04-01

Photoacid generators (PAGs) are a key component in chemically amplified resists used in photolithography. Perfluorooctanesulfonates (PFOS) and other perfluoroalkylsulfonates (PFAS) have been well adopted as PAGs in 193 nm photoresist. Recently, concerns have been raised about their environmental impact due to their chemical persistency, bioaccumulation and toxicity. It is a general interest to find environmentally benign PAGs that are free of fluorine atoms. Here we describe the design, synthesis and characterization of a series of novel fluorine-free onium salts as PAGs for 193 nm photoresists. These PAGs demonstrated desirable physical and lithography properties when compared with PFAS-based PAGs for both dry and immersion exposures.

16 CFR 1633.5 - Prototype pooling and confirmation testing requirements.

Science.gov (United States)

2010-01-01

... 16 Commercial Practices 2 2010-01-01 2010-01-01 false Prototype pooling and confirmation testing... Prototype pooling and confirmation testing requirements. (a) Prototype pooling. One or more manufacturers may rely on a qualified prototype produced by another manufacturer or prototype developer provided...

Alkali-developable silicone-based negative photoresist (SNP) for deep UV, electron beam, and X-ray lithographies

International Nuclear Information System (INIS)

Ban, Hiroshi; Tanaka, Akinobu; Kawai, Yoshio; Deguchi, Kimiyoshi

1989-01-01

A new silicone-based negative photoresist (SNP) developable with alkaline aqueous solutions is prepared. SNP composed of acetylated phenylsilsesquioxane oligomer and azidopyrene is applied to deep UV, electron beam (EB), and X-ray lithographies. SNP slightly swells in alkaline developers, thus exhibiting exceptionally high resolution characteristics for a negative resist. The resistance of SNP to oxygen reactive ion etching is approximately 30 times greater than that of conventional novolac resists. (author)

The impact of 14nm photomask variability and uncertainty on computational lithography solutions

Science.gov (United States)

Sturtevant, John; Tejnil, Edita; Buck, Peter D.; Schulze, Steffen; Kalk, Franklin; Nakagawa, Kent; Ning, Guoxiang; Ackmann, Paul; Gans, Fritz; Buergel, Christian

2013-09-01

Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models rely upon the accurate representation of multiple parameters associated with the scanner and the photomask. Many input variables for simulation are based upon designed or recipe-requested values or independent measurements. It is known, however, that certain measurement methodologies, while precise, can have significant inaccuracies. Additionally, there are known errors associated with the representation of certain system parameters. With shrinking total CD control budgets, appropriate accounting for all sources of error becomes more important, and the cumulative consequence of input errors to the computational lithography model can become significant. In this work, we examine via simulation, the impact of errors in the representation of photomask properties including CD bias, corner rounding, refractive index, thickness, and sidewall angle. The factors that are most critical to be accurately represented in the model are cataloged. CD bias values are based on state of the art mask manufacturing data and other variables changes are speculated, highlighting the need for improved metrology and communication between mask and OPC model experts. The simulations are done by ignoring the wafer photoresist model, and show the sensitivity of predictions to various model inputs associated with the mask. It is shown that the wafer simulations are very dependent upon the 1D/2D representation of the mask and for 3D, that the mask sidewall angle is a very sensitive factor influencing simulated wafer CD results.

Mask compensation for process flare in 193nm very low k1 lithography

Science.gov (United States)

Lee, Jeonkyu; Lee, Taehyeong; Oh, Sangjin; Kang, Chunsoo; Kim, Jungchan; Choi, Jaeseung; Park, Chanha; Yang, Hyunjo; Yim, Donggyu; Do, Munhoe; Su, Irene; Song, Hua; Choi, Jung-Hoe; Fan, Yongfa; Wang, Anthony C.; Lee, Sung-Woo; Boone, Robert; Lucas, Kevin

2013-04-01

Traditional rule-based and model-based OPC methods only simulate in a very local area (generally less than 1um) to identify and correct for systematic optical or process problems. Despite this limitation, however, these methods have been very successful for many technology generations and have been a major reason for the industry being able to tremendously push down lithographic K1. This is also enabled by overall good across-exposure field lithographic process control which has been able to minimize longer range effects across the field. Now, however, the situation has now become more complex. The lithographic single exposure resolution limit with 1.35NA tools remains about 80nm pitch but the final wafer dimensions and final wafer pitches required in advanced technologies continue to scale down. This is putting severe strain on lithographic process and OPC CD control. Therefore, formerly less important 2nd order effects are now starting to have significant CD control impact if not corrected for. In this paper, we provide examples and discussion of how optical and chemical flare related effects are becoming more problematic, especially at the boundaries of large, dense memory arrays. We then introduce a practical correction method for these systematic effects which reuses some of the recent long range effect correcting OPC techniques developed for EUV pattern correction (such as EUV flare). We next provide analysis of the benefits of these OPC methods for chemical flare issues in 193nm lithography very low K1 lithography. Finally, we summarize our work and briefly mention possible future extensions.

Large-area soft x-ray projection lithography using multilayer mirrors structured by RIE

Science.gov (United States)

Rahn, Steffen; Kloidt, Andreas; Kleineberg, Ulf; Schmiedeskamp, Bernt; Kadel, Klaus; Schomburg, Werner K.; Hormes, F. J.; Heinzmann, Ulrich

1993-01-01

SXPL (soft X-ray projection lithography) is one of the most promising applications of X-ray reflecting optics using multilayer mirrors. Within our collaboration, such multilayer mirrors were fabricated, characterized, laterally structured and then used as reflection masks in a projecting lithography procedure. Mo/Si-multilayer mirrors were produced by electron beam evaporation in UHV under thermal treatment with an in-situ X-ray controlled thickness in the region of 2d equals 14 nm. The reflectivities measured at normal incidence reached up to 54%. Various surface analysis techniques have been applied in order to characterize and optimize the X-ray mirrors. The multilayers were patterned by reactive ion etching (RIE) with CF(subscript 4), using a photoresist as the etch mask, thus producing X-ray reflection masks. The masks were tested in the synchrotron radiation laboratory of the electron accelerator ELSA at the Physikalisches Institut of Bonn University. A double crystal X-ray monochromator was modified so as to allow about 0.5 cm(superscript 2) of the reflection mask to be illuminated by white synchrotron radiation. The reflected patterns were projected (with an energy of 100 eV) onto the resist (Hoechst AZ PF 514), which was mounted at an average distance of about 7 mm. In the first test-experiments, structure sizes down to 8 micrometers were nicely reproduced over the whole of the exposed area. Smaller structures were distorted by Fresnel-diffraction. The theoretically calculated diffraction images agree very well with the observed images.

ABOUT MODERN TECHNICAL GRAPHICS USING IN THE VIRTUAL PROTOTYPING

OpenAIRE

GHERGHINA George; POPA Dragos; BOGDAN Mihaela; GLUGA Cristian

2008-01-01

The paper presents aspects concerning the using of modern technical graphics elements in the virtual prototyping. The virtual prototyping is a process which uses a virtual prototype in place of physical prototype for the testing and the evaluation of specific features of designed product. The virtual prototype is created by computer such as it could assign the specific features as close as possible to the real conditions which permit its function simulation in the conditions for which is desi...

Prototype ion source for JT-60 neutral beam injectors

International Nuclear Information System (INIS)

Akiba, M.

1981-01-01

A prototype ion source for JT-60 neutral beam injectors has been fabricated and tested. Here, we review the construction of the prototype ion source and report the experimental results about the source characteristics that has been obtained at this time. The prototype ion source is now installed at the prototype unit of JT-60 neutral beam injection units and the demonstration of the performances of the ion source and the prototype unit has just started

Prototype design based on NX subdivision modeling application

Science.gov (United States)

Zhan, Xianghui; Li, Xiaoda

2018-04-01

Prototype design is an important part of the product design, through a quick and easy way to draw a three-dimensional product prototype. Combined with the actual production, the prototype could be modified several times, resulting in a highly efficient and reasonable design before the formal design. Subdivision modeling is a common method of modeling product prototypes. Through Subdivision modeling, people can in a short time with a simple operation to get the product prototype of the three-dimensional model. This paper discusses the operation method of Subdivision modeling for geometry. Take a vacuum cleaner as an example, the NX Subdivision modeling functions are applied. Finally, the development of Subdivision modeling is forecasted.

Prototyping SOS meta-theory in Maude

NARCIS (Netherlands)

Mousavi, M.R.; Reniers, M.A.; Mosses, P.D.; Ulidowski, I.

2006-01-01

We present a prototype implementation of SOS meta-theory in the Maude term rewriting language. The prototype defines the basic concepts of SOS meta-theory (e.g., transition formulae, deduction rules and transition system specifications) in Maude. Besides the basic definitions, we implement methods

Prototypical Rod Consolidation Demonstration Project

International Nuclear Information System (INIS)

1993-05-01

The objective of Phase III of the Prototypical Rod Consolidation Demonstration Project (PRCDP) was to procure, fabricate, assemble, and test the Prototypical Rod Consolidation System as described in the NUS Phase II Final Design Report. This effort required providing the materials, components, and fabricated parts which makes up all of the system equipment. In addition, it included the assembly, installation, and setup of this equipment at the Cold Test Facility. During the Phase III effort the system was tested on a component, subsystem, and system level. Volume IV provides the Operating and Maintenance Manual for the Prototypical Rod Consolidation System that was installed at the Cold Test Facility. This document, Book 1 of Volume IV, discusses: Process overview functional descriptions; Control system descriptions; Support system descriptions; Maintenance system descriptions; and Process equipment descriptions

Science with the ASTRI prototype

International Nuclear Information System (INIS)

Sartore, Nicola

2013-01-01

ASTRI (Astrofisica a Specchi con Tecnologia Replicante Italiana) is a “Flagship Project” financed by the Italian Ministry of Instruction, University and Research and led by the Italian National Institute of Astrophysics. It represents the Italian proposal for the development of the Small Size Telescope system of the Cherenkov Telescope Array, the next generation observatory for Very High Energy gamma-rays (20 GeV - 100 TeV). The ASTRI end-to-end prototype will be installed at Serra La Nave (Catania, Italy) and it will see the first light at the beginning of 2014. We describe the expected performance of the prototype on few selected test cases of the northern emisphere. The aim of the prototype is to probe the technological solutions and the nominal performance of the various telescope's subsystems

Prototypical Rod Consolidation Demonstration Project

International Nuclear Information System (INIS)

1993-05-01

The objective of Phase III of the Prototypical Rod Consolidation Demonstration Project (PRCDP) was to procure, fabricate, assemble, and test the Prototypical Rod Consolidation System as described in the NUS Phase II Final Design Report. This effort required providing the materials, components, and fabricated parts which makes up all of the system equipment. In addition, it included the assembly, installation, and setup of this equipment at the Cold Test Facility. During the Phase III effort the system was tested on a component, subsystem, and system level. Volume IV provides the Operating and Maintenance Manual for the Prototypical Rod Consolidation System that was installed at the Cold Test Facility. This document, Book 4 of Volume IV, discusses: Off-normal operating and recovery procedures; Emergency response procedures; Troubleshooting procedures; and Preventive maintenance procedures

[Rapid prototyping: a very promising method].

Science.gov (United States)

Haverman, T M; Karagozoglu, K H; Prins, H-J; Schulten, E A J M; Forouzanfar, T

2013-03-01

Rapid prototyping is a method which makes it possible to produce a three-dimensional model based on two-dimensional imaging. Various rapid prototyping methods are available for modelling, such as stereolithography, selective laser sintering, direct laser metal sintering, two-photon polymerization, laminated object manufacturing, three-dimensional printing, three-dimensional plotting, polyjet inkjet technology,fused deposition modelling, vacuum casting and milling. The various methods currently being used in the biomedical sector differ in production, materials and properties of the three-dimensional model which is produced. Rapid prototyping is mainly usedforpreoperative planning, simulation, education, and research into and development of bioengineering possibilities.

Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography

Science.gov (United States)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-07-01

Extreme ultraviolet lithography (EUVL, λ=13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high-power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity [S or best energy (BE)], and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (line width roughness, resolution and sensitivity trade-off) among these parameters for chemically amplified resists (CARs). We present early proof-of-principle results for a multiexposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a "Photosensitized Chemically Amplified Resist™" (PSCAR™). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV-flood exposure (λ=365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR, and EL high-performance requirements with the aim of resolving line space (L/S) features for the 7- and 5-nm logic node [16- and 13-nm half-pitch (HP), respectively] for HVM. Several CARs were additionally found to be well resolved down to 12- and 11-nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated

Prototyping for surgical and prosthetic treatment.

Science.gov (United States)

Goiato, Marcelo Coelho; Santos, Murillo Rezende; Pesqueira, Aldiéris Alves; Moreno, Amália; dos Santos, Daniela Micheline; Haddad, Marcela Filié

2011-05-01

Techniques of rapid prototyping were introduced in the 1980s in the field of engineering for the fabrication of a solid model based on a computed file. After its introduction in the biomedical field, several applications were raised for the fabrication of models to ease surgical planning and simulation in implantology, neurosurgery, and orthopedics, as well as for the fabrication of maxillofacial prostheses. Hence, the literature has described the evolution of rapid prototyping technique in health care, which allowed easier technique, improved surgical results, and fabrication of maxillofacial prostheses. Accordingly, a literature review on MEDLINE (PubMed) database was conducted using the keywords rapid prototyping, surgical planning, and maxillofacial prostheses and based on articles published from 1981 to 2010. After reading the titles and abstracts of the articles, 50 studies were selected owing to their correlations with the aim of the current study. Several studies show that the prototypes have been used in different dental-medical areas such as maxillofacial and craniofacial surgery; implantology; neurosurgery; orthopedics; scaffolds of ceramic, polymeric, and metallic materials; and fabrication of personalized maxillofacial prostheses. Therefore, prototyping has been an indispensable tool in several studies and helpful for surgical planning and fabrication of prostheses and implants.

Low-energy electron beam proximity projection lithography (LEEPL): the world's first e-beam production tool, LEEPL 3000

Science.gov (United States)

Behringer, Uwe F. W.

2004-06-01

In June 2000 ago the company Accretech and LEEPL corporation decided to develop an E-beam lithography tool for high throughput wafer exposure, called LEEPL. In an amazing short time the alpha tool was built. In 2002 the beta tool was installed at Accretech. Today the first production tool the LEEPL 3000 is ready to be shipped. The 2keV E-beam tool will be used in the first lithography strategy to expose (in mix and match mode with optical exposure tools) critical levels like gate structures, contact holes (CH), and via pattern of the 90 nm and 65 nm node. At the SEMATECH EPL workshop on September 22nd in Cambridge, England it was mentioned that the amount of these levels will increase very rapidly (8 in 2007; 13 in 2010 and 17 in 2013). The schedule of the production tool for 45 nm node is mid 2005 and for the 32 nm node 2008. The Figure 1 shows from left to right α-tool, the β-tool and the production tool LEEPL 3000. Figure 1 also shows the timetable of the 4 LEEPL forum all held in Japan.

Aging effect of AlF3 coatings for 193 nm lithography

Science.gov (United States)

Zhao, Jia; Wang, Lin; Zhang, Weili; Yi, Kui; Shao, Jianda

2018-02-01

As important part of components for 193 nm lithography, AlF3 coatings deposited by resistive heating method acquire advantages like lower optical loss and higher laser damage threshold, but they also possess some disadvantages like worse stability, which is what aging effect focuses on. AlF3 single-layer coatings were deposited; optical property, surface morphology and roughness, and composition were characterized in different periods. Owing to aging effect, refractive index and extinction coefficient increased; larger and larger roughness caused more and more scattering loss, which was in the same order with absorption at 193.4 nm and part of optical loss; from composition analysis, proportional substitution of AlF3 by alumina may account for changes in refractive index as well as absorption.

Development of an MeV ion beam lithography system in Jyvaeskylae

Energy Technology Data Exchange (ETDEWEB)

Gorelick, Sergey [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland)]. E-mail: Sergey.Gorelick@phys.jyu.fi; Ylimaeki, Tommi [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Sajavaara, Timo [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Laitinen, Mikko [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Sagari, A.R.A. [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Whitlow, Harry J. [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland)

2007-07-15

A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyvaeskylae cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5-500 {mu}m side with protons up to 6 MeV and heavy ions ({sup 20}Ne, {sup 85}Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography systems.

A 3D-printed device for polymer nanoimprint lithography

Science.gov (United States)

Caño-García, Manuel; Geday, Morten A.; Gil-Valverde, Manuel; Megías Zarco, Antonio; Otón, José M.; Quintana, Xabier

2018-02-01

Nanoimprint lithography (NIL) is an imprinting technique which has experienced an increasing popularity due to its versatility in fabrication processes. Commercial NIL machines are readily available achieving high quality results; however, these machines involve a relatively high investment. Hence, small laboratories often choose to perform NIL copies in a more rudimentary and cheaper way. A new simple system is presented in this document. It is based on two devices which can be made in-house in plastic by using a 3D printer or in aluminum. Thus, the overall manufacturing complexity is vastly reduced. The presented system includes pressure control and potentially temperature control. Replicas have been made using a sawtooth grating master with a pitch around half micrometre. High quality patterns with low density of imperfections have been achieved in 2.25 cm2 surfaces. The material chosen for the negative intermediary mould is PDMS. Tests of the imprint have been performed using the commercial hybrid polymer Ormostamp®.

Interpreting cost of ownership for mix-and-match lithography

Science.gov (United States)

Levine, Alan L.; Bergendahl, Albert S.

1994-05-01

Cost of ownership modeling is a critical and emerging tool that provides significant insight into the ways to optimize device manufacturing costs. The development of a model to deal with a particular application, mix-and-match lithography, was performed in order to determine the level of cost savings and the optimum ways to create these savings. The use of sensitivity analysis with cost of ownership allows the user to make accurate trade-offs between technology and cost. The use and interpretation of the model results are described in this paper. Parameters analyzed include several manufacturing considerations -- depreciation, maintenance, engineering and operator labor, floorspace, resist, consumables and reticles. Inherent in this study is the ability to customize this analysis for a particular operating environment. Results demonstrate the clear advantages of a mix-and-match approach for three different operating environments. These case studies also demonstrate various methods to efficiently optimize cost savings strategies.

Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth.

Science.gov (United States)

Madaria, Anuj R; Yao, Maoqing; Chi, Chunyung; Huang, Ningfeng; Lin, Chenxi; Li, Ruijuan; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2012-06-13

Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic applications, in which achieving scalable synthesis and optimized optical absorption simultaneously is critical. Here, we report combining nanosphere lithography (NSL) and selected area metal-organic chemical vapor deposition (SA-MOCVD) for the first time for scalable synthesis of vertically aligned gallium arsenide nanowire arrays, and surprisingly, we show that such nanowire arrays with patterning defects due to NSL can be as good as highly ordered nanowire arrays in terms of optical absorption and reflection. Wafer-scale patterning for nanowire synthesis was done using a polystyrene nanosphere template as a mask. Nanowires grown from substrates patterned by NSL show similar structural features to those patterned using electron beam lithography (EBL). Reflection of photons from the NSL-patterned nanowire array was used as a measure of the effect of defects present in the structure. Experimentally, we show that GaAs nanowires as short as 130 nm show reflection of <10% over the visible range of the solar spectrum. Our results indicate that a highly ordered nanowire structure is not necessary: despite the "defects" present in NSL-patterned nanowire arrays, their optical performance is similar to "defect-free" structures patterned by more costly, time-consuming EBL methods. Our scalable approach for synthesis of vertical semiconducting nanowires can have application in high-throughput and low-cost optoelectronic devices, including solar cells.

Via patterning in the 7-nm node using immersion lithography and graphoepitaxy directed self-assembly

Science.gov (United States)

Doise, Jan; Bekaert, Joost; Chan, Boon Teik; Hori, Masafumi; Gronheid, Roel

2017-04-01

Insertion of a graphoepitaxy directed self-assembly process as a via patterning technology into integrated circuit fabrication is seriously considered for the 7-nm node and beyond. At these dimensions, a graphoepitaxy process using a cylindrical block copolymer that enables hole multiplication can alleviate costs by extending 193-nm immersion-based lithography and significantly reducing the number of masks that would be required per layer. To be considered for implementation, it needs to be proved that this approach can achieve the required pattern quality in terms of defects and variability using a representative, aperiodic design. The patterning of a via layer from an actual 7-nm node logic layout is demonstrated using immersion lithography and graphoepitaxy directed self-assembly in a fab-like environment. The performance of the process is characterized in detail on a full 300-mm wafer scale. The local variability in an edge placement error of the obtained patterns (4.0 nm 3σ for singlets) is in line with the recent results in the field and significantly less than of the prepattern (4.9 nm 3σ for singlets). In addition, it is expected that pattern quality can be further improved through an improved mask design and optical proximity correction. No major complications for insertion of the graphoepitaxy directed self-assembly into device manufacturing were observed.

ABOUT MODERN TECHNICAL GRAPHICS USING IN THE VIRTUAL PROTOTYPING

Directory of Open Access Journals (Sweden)

GHERGHINA George

2008-07-01

Full Text Available The paper presents aspects concerning the using of modern technical graphics elements in the virtual prototyping. The virtual prototyping is a process which uses a virtual prototype in place of physical prototype for the testing and the evaluation of specific features of designed product. The virtual prototype is created by computer such as it could assign the specific features as close as possible to the real conditions which permit its function simulation in the conditions for which is designed. The virtual prototyping permits the replacing of classical design process, although, and the elaboration of graphicalm documentation, which represent an important work volume – with CAD/CAM systems in the increased efficiency conditions.

A prototype for JDEM science data processing

International Nuclear Information System (INIS)

Gottschalk, Erik E

2011-01-01

Fermilab is developing a prototype science data processing and data quality monitoring system for dark energy science. The purpose of the prototype is to demonstrate distributed data processing capabilities for astrophysics applications, and to evaluate candidate technologies for trade-off studies. We present the architecture and technical aspects of the prototype, including an open source scientific execution and application development framework, distributed data processing, and publish/subscribe message passing for quality control.

Prototype calorimeters for the NA3 experiment

CERN Multimedia

1975-01-01

The NA3 Experiment was set-up on the North Area of the SPS by the CERN/ Ecole Polytechnique/College de France/ Orsay/Saclay Collaboration, to study high transverse momentum leptons and hadrons from hadron collisions. The calorimeters measured the energy of hadrons (prototype on the right) and leptons (prototype on the left). They used a new type of plastic scintillator (plexipop). (see CERN Courier of November 1975) energy (prototype on the right)

Rapid prototyping using CBCT: an initial experience

International Nuclear Information System (INIS)

Yovchev, D.; Deliverska, E.; Indjova, J.; Ugrinov, R.

2011-01-01

This report presents a case of fibrous dysplasia in the left lower jaw of a 12-year-old girl, scanned with CBCT. On the basis of CBCT scan a model of affected jaw was produced using a rapid-prototyping three-dimensional printer. The case demonstrates the possibility to get a prototype by CBCT data. Prototypes can be used to support the diagnosis, planning, training (students and postgraduates) and to obtain informed consent from the patient.

Development of a prototype of a candidate camera payload

OpenAIRE

Oltedal, Jon Kalevi

2016-01-01

The second prototype for the NUTS camera module have been tested to confirm if changes made from the first prototype were successful. The first prototype suffered from noise issues when operating at the maximum clock frequency of 96MHz. This needed to be fixed for the MT9P031 image sensor to be usable in further designs. Debugging and testing using the camera prototype hardware and software proved that the prototype managed to produce noise free images with bright parts in the images. These r...

How to measure a-few-nanometer-small LER occurring in EUV lithography processed feature

Science.gov (United States)

Kawada, Hiroki; Kawasaki, Takahiro; Kakuta, Junichi; Ikota, Masami; Kondo, Tsuyoshi

2018-03-01

For EUV lithography features we want to decrease the dose and/or energy of CD-SEM's probe beam because LER decreases with severe resist-material's shrink. Under such conditions, however, measured LER increases from true LER, due to LER bias that is fake LER caused by random noise in SEM image. A gap error occurs between the right and the left LERs. In this work we propose new procedures to obtain true LER by excluding the LER bias from the measured LER. To verify it we propose a LER's reference-metrology using TEM.

NAVIGATING PROTOTYPING SPACES FOR CO-DESIGN OF ACTOR-NETWORKS

DEFF Research Database (Denmark)

Pedersen, Signe; Brodersen, Søsser

2017-01-01

of diverse actors in what we term prototyping spaces. In these prototyping spaces, prototypes play an important role in visualising controversies, enabling matters of concern to be negotiated, and making knowledge transparent throughout the design process. Based on a case study of a pilot program to make...... of temporary prototyping spaces, which are to be staged and facilitated to allow various actors to negotiate matters of concern. Designers then translate the resulting knowledge and insights into pro-totypes for use in subsequent spaces and eventually into an actor-network com-prising the final solution....

Flight Telerobotic Servicer prototype simulator

Science.gov (United States)

Schein, Rob; Krauze, Linda; Hartley, Craig; Dickenson, Alan; Lavecchia, Tom; Working, Bob

A prototype simulator for the Flight Telerobotic Servicer (FTS) system is described for use in the design development of the FTS, emphasizing the hand controller and user interface. The simulator utilizes a graphics workstation based on rapid prototyping tools for systems analyses of the use of the user interface and the hand controller. Kinematic modeling, manipulator-control algorithms, and communications programs are contained in the software for the simulator. The hardwired FTS panels and operator interface for use on the STS Orbiter are represented graphically, and the simulated controls function as the final FTS system configuration does. The robotic arm moves based on the user hand-controller interface, and the joint angles and other data are given on the prototype of the user interface. This graphics simulation tool provides the means for familiarizing crewmembers with the FTS system operation, displays, and controls.

Homogeneity of Prototypical Attributes in Soccer Teams

Directory of Open Access Journals (Sweden)

Christian Zepp

2015-09-01

Full Text Available Research indicates that the homogeneous perception of prototypical attributes influences several intragroup processes. The aim of the present study was to describe the homogeneous perception of the prototype and to identify specific prototypical subcategories, which are perceived as homogeneous within sport teams. The sample consists of N = 20 soccer teams with a total of N = 278 athletes (age M = 23.5 years, SD = 5.0 years. The results reveal that subcategories describing the cohesiveness of the team and motivational attributes are mentioned homogeneously within sport teams. In addition, gender, identification, team size, and the championship ranking significantly correlate with the homogeneous perception of prototypical attributes. The results are discussed on the basis of theoretical and practical implications.

Polymer blend lithography: A versatile method to fabricate nanopatterned self-assembled monolayers

Directory of Open Access Journals (Sweden)

Cheng Huang

2012-09-01

Full Text Available A rapid and cost-effective lithographic method, polymer blend lithography (PBL, is reported to produce patterned self-assembled monolayers (SAM on solid substrates featuring two or three different chemical functionalities. For the pattern generation we use the phase separation of two immiscible polymers in a blend solution during a spin-coating process. By controlling the spin-coating parameters and conditions, including the ambient atmosphere (humidity, the molar mass of the polystyrene (PS and poly(methyl methacrylate (PMMA, and the mass ratio between the two polymers in the blend solution, the formation of a purely lateral morphology (PS islands standing on the substrate while isolated in the PMMA matrix can be reproducibly induced. Either of the formed phases (PS or PMMA can be selectively dissolved afterwards, and the remaining phase can be used as a lift-off mask for the formation of a nanopatterned functional silane monolayer. This “monolayer copy” of the polymer phase morphology has a topographic contrast of about 1.3 nm. A demonstration of tuning of the PS island diameter is given by changing the molar mass of PS. Moreover, polymer blend lithography can provide the possibility of fabricating a surface with three different chemical components: This is demonstrated by inducing breath figures (evaporated condensed entity at higher humidity during the spin-coating process. Here we demonstrate the formation of a lateral pattern consisting of regions covered with 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS and (3-aminopropyltriethoxysilane (APTES, and at the same time featuring regions of bare SiOx. The patterning process could be applied even on meter-sized substrates with various functional SAM molecules, making this process suitable for the rapid preparation of quasi two-dimensional nanopatterned functional substrates, e.g., for the template-controlled growth of ZnO nanostructures.

Pixelgram: an application of electron-beam lithography for the security printing industry

Science.gov (United States)

Lee, Robert A.

1991-10-01

Following the development of the Catpix I diffraction gratings structure first used on the 1988 Australian plastic DLR10 banknote and more recently on the Singapore plastic DLR50 banknote, the CSIRO Australia, Division of Materials Science & Technology has developed a new optical security and anti-counterfeiting technology known as Pixelgram (or Catpix 2). The Pixelgram, which is subject to patent, is an optically variable device based on a computerized procedure for producing an optically variable version of any given input picture, e.g., a photograph. When a Pixelgram is observed under a given source, such as a fluorescent tube, the image of the original input picture appears at particular angles of view. At other angles, the image varies in both contrast and brightness and can even appear as the photographic negative of the original input picture at some angles of view. As well as its ability to generate optically variable text and graphical images, Pixelgram has the unique capability of being able to display easily recognizable small scale optically variable images of the human face of near photographic clarity. Pixelgram optical security device master plates are produced by a technique borrowed from the microelectronics industry and known as electron beam lithography. In this technique, millions of microscopic grooves are written individually by a finely focused electron beam scanning across a glass plate coated with an electron sensitive material. On a typical Pixelgram there are approximately 2,000 million individual polygons etched into the plate by the electron beam. This corresponds to more than 10,000 megabytes of binary data. The only known electron beam lithography systems that have been able to write such large data files with the required precision are the Cambridge Instruments EBMF 10.5 and EBML 300 electron beam systems.

Polymer blend lithography: A versatile method to fabricate nanopatterned self-assembled monolayers.

Science.gov (United States)

Huang, Cheng; Moosmann, Markus; Jin, Jiehong; Heiler, Tobias; Walheim, Stefan; Schimmel, Thomas

2012-01-01

A rapid and cost-effective lithographic method, polymer blend lithography (PBL), is reported to produce patterned self-assembled monolayers (SAM) on solid substrates featuring two or three different chemical functionalities. For the pattern generation we use the phase separation of two immiscible polymers in a blend solution during a spin-coating process. By controlling the spin-coating parameters and conditions, including the ambient atmosphere (humidity), the molar mass of the polystyrene (PS) and poly(methyl methacrylate) (PMMA), and the mass ratio between the two polymers in the blend solution, the formation of a purely lateral morphology (PS islands standing on the substrate while isolated in the PMMA matrix) can be reproducibly induced. Either of the formed phases (PS or PMMA) can be selectively dissolved afterwards, and the remaining phase can be used as a lift-off mask for the formation of a nanopatterned functional silane monolayer. This "monolayer copy" of the polymer phase morphology has a topographic contrast of about 1.3 nm. A demonstration of tuning of the PS island diameter is given by changing the molar mass of PS. Moreover, polymer blend lithography can provide the possibility of fabricating a surface with three different chemical components: This is demonstrated by inducing breath figures (evaporated condensed entity) at higher humidity during the spin-coating process. Here we demonstrate the formation of a lateral pattern consisting of regions covered with 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS) and (3-aminopropyl)triethoxysilane (APTES), and at the same time featuring regions of bare SiO(x). The patterning process could be applied even on meter-sized substrates with various functional SAM molecules, making this process suitable for the rapid preparation of quasi two-dimensional nanopatterned functional substrates, e.g., for the template-controlled growth of ZnO nanostructures [1].

Initial performance of the PIGMI prototype

International Nuclear Information System (INIS)

Stovall, J.E.

1979-01-01

The PIGMI (Pion Generator for Medical Irradiations) program at LASL is an accelerator development program aimed at completing the design of an accelerator suitable for use as a pion generator in a hospital-based radiotherapy program. The major thrust of the program has been the design of a 7 MeV prototype accelerator which emphasizes compactness, economy of construction, and operation and reliability. To achieve these goals the design of the prototype has exploited a number of innovations in proton linac technology. An overview of the program discussing the major innovative features of the prototype is presented. The initial operating experience is discussed and initial performance measurements are presented

The Yucca Mountain Project Prototype Testing Program

International Nuclear Information System (INIS)

1989-10-01

The Yucca Mountain Project is conducting a Prototype Testing Program to ensure that the Exploratory Shaft Facility (ESF) tests can be completed in the time available and to develop instruments, equipment, and procedures so the ESF tests can collect reliable and representative site characterization data. This report summarizes the prototype tests and their status and location and emphasizes prototype ESF and surface tests, which are required in the early stages of the ESF site characterization tests. 14 figs

Tangiplay: prototyping tangible electronic games

OpenAIRE

Boileau, Jason

2010-01-01

Tangible electronic games currently exist in research laboratories around the world but have yet to transition to the commercial sector. The development process of a tangible electronic game is one of the factors preventing progression, as it requires much time and money. Prototyping tools for tangible hardware and software development are becoming more available but are targeted to programmers and technically trained developers. Paper prototyping board and video games is a proven and rapid m...

Automated prototyping tool-kit (APT)

OpenAIRE

Nada, Nader; Shing, M.; Berzins, V.; Luqi

2002-01-01

Automated prototyping tool-kit (APT) is an integrated set of software tools that generate source programs directly from real-time requirements. The APT system uses a fifth-generation prototyping language to model the communication structure, timing constraints, 1/0 control, and data buffering that comprise the requirements for an embedded software system. The language supports the specification of hard real-time systems with reusable components from domain specific component libraries. APT ha...

Prototype models for particle structure in gauge supersymmetry

International Nuclear Information System (INIS)

Nath, P.; Arnowitt, R.

1981-01-01

Particle content in prototype models of gauge supersymmetry is examined. The properties of the prototype models which are in common with those of gauge supersymmetries are the initial non-diagonality of the quadratic part of the action, global supersymmetry invariance and the existence of a mass parameter in the quadratic part of the action. The analysis exhibits the particle content of prototype models to consist of normal poles and sets of complex conjugate poles on the physical sheet. Diagonalization of the hamiltonian can be carried out for such systems (in contrast to the prototype model of conformal supergravity where dipole ghosts arose). Essentially the pole structure observed in the prototype models of gauge supersymmetry is the supersymmetric analogue of the Lee-Wick phenomenon where the normal and the complex conjugate poles form global multiplets. (orig.)

MPACT Fast Neutron Multiplicity System Prototype Development

Energy Technology Data Exchange (ETDEWEB)

D.L. Chichester; S.A. Pozzi; J.L. Dolan; M.T. Kinlaw; S.J. Thompson; A.C. Kaplan; M. Flaska; A. Enqvist; J.T. Johnson; S.M. Watson

2013-09-01

This document serves as both an FY2103 End-of-Year and End-of-Project report on efforts that resulted in the design of a prototype fast neutron multiplicity counter leveraged upon the findings of previous project efforts. The prototype design includes 32 liquid scintillator detectors with cubic volumes 7.62 cm in dimension configured into 4 stacked rings of 8 detectors. Detector signal collection for the system is handled with a pair of Struck Innovative Systeme 16-channel digitizers controlled by in-house developed software with built-in multiplicity analysis algorithms. Initial testing and familiarization of the currently obtained prototype components is underway, however full prototype construction is required for further optimization. Monte Carlo models of the prototype system were performed to estimate die-away and efficiency values. Analysis of these models resulted in the development of a software package capable of determining the effects of nearest-neighbor rejection methods for elimination of detector cross talk. A parameter study was performed using previously developed analytical methods for the estimation of assay mass variance for use as a figure-of-merit for system performance. A software package was developed to automate these calculations and ensure accuracy. The results of the parameter study show that the prototype fast neutron multiplicity counter design is very nearly optimized under the restraints of the parameter space.

Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

Directory of Open Access Journals (Sweden)

Adrian Iovan

2012-12-01

Full Text Available Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

On the similarities between micro/nano lithography and topology optimization projection methods

DEFF Research Database (Denmark)

Jansen, Miche; Lazarov, Boyan Stefanov; Schevenels, Mattias

2013-01-01

The aim of this paper is to incorporate a model for micro/nano lithography production processes in topology optimization. The production process turns out to provide a physical analogy for projection filters in topology optimization. Blueprints supplied by the designers cannot be directly used...... as inputs to lithographic processes due to the proximity effect which causes rounding of sharp corners and geometric interaction of closely spaced design elements. Therefore, topology optimization is applied as a tool for proximity effect correction. Furthermore, it is demonstrated that the robust...... projection filter can be used to account for uncertainties due to lithographic production processes which results in manufacturable blueprint designs and eliminates the need for subsequent corrections....

Negative resists for i-line lithography utilizing acid-catalyzed intramolecular dehydration reaction

Science.gov (United States)

Ueno, Takumi; Uchino, Shou-ichi; Hattori, Keiko T.; Onozuka, Toshihiko; Shirai, Seiichiro; Moriuchi, Noboru; Hashimoto, Michiaki; Koibuchi, S.

1994-05-01

Chemical amplification negative resist system composed of a novolak resin, a carbinol and an acid generator is investigated for i-line phase-shift lithography. The reaction in this resist is based on an acid-catalyzed intramolecular dehydration reaction. The dehydration products act as aqueous-base dissolution inhibitors, and carbinol compounds in unexposed areas work as dissolution promoters. The resist composed of a novolak resin, 1,4-bis((alpha) -hydroxyisopropyl) benzene (DIOL-1) and 2- naphthoylmethyltetramethylenesulfonium triflate (PAG-2) gives the best lithographic performance in terms of sensitivity and resolution. Line-and-space patterns of 0.275 micrometers are obtained using an i-line stepper (NA:0.45) in conjunction with a phase shifting mask.