The effects of irradiation and proton implantation on the density of mobile protons in SiO2 films

International Nuclear Information System (INIS)

Vanheusden, K.

1998-04-01

Proton implantation into the buried oxide of Si/SiO 2 /Si structures does not introduce mobile protons. The cross section for capture of radiation-induced electrons by mobile protons is two orders of magnitude smaller than for electron capture by trapped holes. The data provide new insights into the atomic mechanisms governing the generation and radiation tolerance of mobile protons in SiO 2 . This can lead to improved techniques for production and radiation hardening of radiation tolerant memory devices

Emulation of neutron irradiation effects with protons: validation of principle

International Nuclear Information System (INIS)

Was, G.S.; Busby, J.T.; Allen, T.; Kenik, E.A.; Jensson, A.; Bruemmer, S.M.; Gan, J.; Edwards, A.D.; Scott, P.M.; Andreson, P.L.

2002-01-01

This paper presents the results of the irradiation, characterization and irradiation assisted stress corrosion cracking (IASCC) behavior of proton- and neutron-irradiated samples of 304SS and 316SS from the same heats. The objective of the study was to determine whether proton irradiation does indeed emulate the full range of effects of in-reactor neutron irradiation: radiation-induced segregation (RIS), irradiated microstructure, radiation hardening and IASCC susceptibility. The work focused on commercial heats of 304 stainless steel (heat B) and 316 stainless steel (heat P). Irradiation with protons was conducted at 360 deg. C to doses between 0.3 and 5.0 dpa to approximate those by neutron irradiation at 275 deg. C over the same dose range. Characterization consisted of grain boundary microchemistry, dislocation loop microstructure, hardness as well as stress corrosion cracking (SCC) susceptibility of both un-irradiated and irradiated samples in oxygenated and de-oxygenated water environments at 288 deg. C. Overall, microchemistry, microstructure, hardening and SCC behavior of proton- and neutron-irradiated samples were in excellent agreement. RIS analysis showed that in both heats and for both irradiating particles, the pre-existing grain boundary Cr enrichment transformed into a 'W' shaped profile at 1.0 dpa and then into a 'V' shaped profile between 3.0 and 5.0 dpa. Grain boundary segregation of Cr, Ni, Si, and Mo all followed the same trends and agreed well in magnitude. The microstructure of both proton- and neutron-irradiated samples was dominated by small, faulted dislocation loops. Loop size distributions were nearly identical in both heats over a range of doses. Saturated loop size following neutron irradiation was about 30% larger than that following proton irradiation. Loop density increased with dose through 5.0 dpa for both particle irradiations and was a factor of 3 greater in neutron-irradiated samples vs. proton-irradiated samples. Grain boundary

Performance of a proton irradiation chamber

International Nuclear Information System (INIS)

Agosteo, S.; Borsato, E.; Dal Corso, F.; Fazzi, A.; Gonella, F.; Introini, M.V.; Lippi, I.; Lorenzoli, M.; Modenese, L.; Montecassiano, F.; Pegoraro, M.; Pola, A.; Varoli, V.; Zotto, P.

2012-01-01

A Proton Irradiation Chamber aiming to perform radiation tests of electronic components was developed. The precision on the measurement of the ion currents was pushed beyond the resolution of the picoammeter by means of a series of collimators on the beam showing a linear correlation among the currents measured on them and the smaller, not measurable, current on the target. As an example of the obtained results the tests done on a Si microdosimeter and a power p-MOS are reported.

Performance of a proton irradiation chamber

Energy Technology Data Exchange (ETDEWEB)

Agosteo, S. [INFN, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare-CeSNEF, via Ponzio 34/3 20133 Milano (Italy); Borsato, E. [INFN, Sezione di Padova, via Marzolo 8, 35131 Padova (Italy); Universita di Padova, Dipartimento di Fisica, via Marzolo 8, 35131 Padova (Italy); Dal Corso, F. [INFN, Sezione di Padova, via Marzolo 8, 35131 Padova (Italy); Fazzi, A. [INFN, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare-CeSNEF, via Ponzio 34/3 20133 Milano (Italy); Gonella, F. [INFN, Sezione di Padova, via Marzolo 8, 35131 Padova (Italy); Introini, M.V. [INFN, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare-CeSNEF, via Ponzio 34/3 20133 Milano (Italy); Lippi, I. [INFN, Sezione di Padova, via Marzolo 8, 35131 Padova (Italy); Lorenzoli, M. [INFN, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare-CeSNEF, via Ponzio 34/3 20133 Milano (Italy); Modenese, L.; Montecassiano, F.; Pegoraro, M. [INFN, Sezione di Padova, via Marzolo 8, 35131 Padova (Italy); Pola, A.; Varoli, V. [INFN, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare-CeSNEF, via Ponzio 34/3 20133 Milano (Italy); Zotto, P., E-mail: pierluigi.zotto@pd.infn.it [INFN, Sezione di Padova, via Marzolo 8, 35131 Padova (Italy); Universita di Padova, Dipartimento di Fisica, via Marzolo 8, 35131 Padova (Italy)

2012-02-01

A Proton Irradiation Chamber aiming to perform radiation tests of electronic components was developed. The precision on the measurement of the ion currents was pushed beyond the resolution of the picoammeter by means of a series of collimators on the beam showing a linear correlation among the currents measured on them and the smaller, not measurable, current on the target. As an example of the obtained results the tests done on a Si microdosimeter and a power p-MOS are reported.

Comparison of the microstructure, deformation and crack initiation behavior of austenitic stainless steel irradiated in-reactor or with protons

Science.gov (United States)

Stephenson, Kale J.; Was, Gary S.

2015-01-01

The objective of this study was to compare the microstructures, microchemistry, hardening, susceptibility to IASCC initiation, and deformation behavior resulting from proton or reactor irradiation. Two commercial purity and six high purity austenitic stainless steels with various solute element additions were compared. Samples of each alloy were irradiated in the BOR-60 fast reactor at 320 °C to doses between approximately 4 and 12 dpa or by a 3.2 MeV proton beam at 360 °C to a dose of 5.5 dpa. Irradiated microstructures consisted mainly of dislocation loops, which were similar in size but lower in density after proton irradiation. Both irradiation types resulted in the formation of Ni-Si rich precipitates in a high purity alloy with added Si, but several other high purity neutron irradiated alloys showed precipitation that was not observed after proton irradiation, likely due to their higher irradiation dose. Low densities of small voids were observed in several high purity proton irradiated alloys, and even lower densities in neutron irradiated alloys, implying void nucleation was in process. Elemental segregation at grain boundaries was very similar after each irradiation type. Constant extension rate tensile experiments on the alloys in simulated light water reactor environments showed excellent agreement in terms of the relative amounts of intergranular cracking, and an analysis of localized deformation after straining showed a similar response of cracking to surface step height after both irradiation types. Overall, excellent agreement was observed after proton and reactor irradiation, providing additional evidence that proton irradiation is a useful tool for accelerated testing of irradiation effects in austenitic stainless steel.

Electroluminescence of a-Si/c-Si heterojunction solar cells after high energy irradiation

Energy Technology Data Exchange (ETDEWEB)

Ferrara, Manuela

2009-11-24

The crystalline silicon as absorber material will certainly continue to dominate the market for space applications of solar cells. In the contribution under consideration the applicability of a-Si:H/c-Si heterojunction solar cells in space has been tested by the investigation of the cell modification by high energy protons and comparing the results to the degradation of homojunction crystalline silicon reference cells. The investigated solar cells have been irradiated with protons of different energies and doses. For all investigated solar cells the maximum damage happens for an energy of about 1.7 MeV and is mainly due to the decrease of the effective minority carrier diffusion length in the crystalline silicon absorber. Simulations carried out by AFORS-HET, a heterojunction simulation program, also confirmed this result. The main degradation mechanism for all types of devices is the monotonically decreasing charge carrier diffusion length in the p-type monocrystalline silicon absorber layer. For the heterojunction solar cell an enhancement of the photocurrent in the blue wavelength region has been observed but only in the case of heterojunction solar cell with intrinsic a-Si:H buffer layer. Additionally to the traditional characterization techniques the electroluminescence technique used for monitoring the modifications of the heteroluminescence technique used for monitoring the modifications of the heterointerface between amorphous silicon and crystalline silicon in solar cells after proton irradiation. A direct relation between minority carrier diffusion length and electroluminescence quantum efficiency has been observed but also details of the interface modification could be monitored by this technique.

Proton irradiation effects on optical attenuation in doped- and pure-silica fibers

International Nuclear Information System (INIS)

Sakasai, Kaoru; Bueker, H.; Haesing, F.W.; Pfeiffer, F.

1999-05-01

Optical attenuation in doped- and pure-silica fibers was measured at wavelengths of 470 nm, 660 nm, and 850 nm during and after 20 MeV proton irradiation. In the experiment the fibers were arranged on a holder to make one layer' so that uniform proton irradiation can be achieved to them. The induced loss of the doped-silica fiber increased strongly at the beginning of the first irradiation, and decreased slowly after stopping of the beam. In the second irradiation, however, the developed loss was not so large. On the other hand, the loss of the pure-silica fiber increased gradually in the first irradiation, and decreased very quickly after the beam stopped. The loss increased stepwise at the very beginning of the second irradiation. Small luminescence from the fibers during irradiation was observed also. The luminescence of the pure-silica fiber was slightly larger than that of the doped-silica fiber. The induced loss of HCP fibers was also measured when a SiO 2 plate was set in front of the fibers. It may be possible to estimate the proton dose in materials using fiber-optic technique. Proton sensitivities of doped- and pure-silica fibers were, respectively, 1.0 x 10 -10 at 660 nm and 5.5 x 10 -12 at 470 nm in units of (dB/m)/(protons/cm 2 ), where the values were estimated from the slope of the loss growth curves at the beginning of the first irradiation. (author)

Characterization of Czochralski Silicon Detectors

OpenAIRE

Luukka, Panja-Riina; Haerkoenen, Jaakko

2012-01-01

This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

Gamma and electron high dose dosimetry with rad-hard Si diodes

International Nuclear Information System (INIS)

Pascoalino, Kelly Cristina da Silva

2014-01-01

In this work the main dosimetric characteristics of rad-hard Float Zone (FZ) and magnetic Czochralski (MCz) diodes to electrons (1.5 MeV) and gamma ( 60 Co) radiation are evaluated. The dosimetric system proposed is based on electrical current measurements due to radiation interactions on the devices. The batch response uniformity was studied for the n-type FZ diodes irradiated with gamma rays. The coefficient of variation of the current measurement was about 1.25% at 5 kGy of accumulated dose. A sensitivity decrease with the increase of the accumulated dose (Total Ionizing Dose - TID) was observed for both FZ and MCz diodes. For gamma irradiation, these effect is more pronounced for n-type or smaller resistivity diodes. Two types of dosimetric probe were used on the electron irradiation procedures, one of them specially designed to avoid the deterioration of the electrical contacts and the diodes metallization. The sensitivity of the preirradiated FZ and MCz diodes fell about 10% and 40%, respectively, during electron irradiation at 1.25 MGy of accumulated dose. The effect of electron radiation damage on the electrical properties of the diodes was studied by the means of leakage current and capacitance measurements as a function of bias voltage. The leakage current increases with the accumulated dose but does not contributes significantly to the current signal, since the diodes are operated in photovoltaic mode, without bias voltage. For the MCz diode no change in the full depletion voltage was observed, which indicates its higher tolerance to radiation-induced damage, as expected. During electron irradiation the temperature increases and in order to determine its influence for the current signals, the leakage current values were extrapolated up to 35 °C. The contribution does not exceed 0.1% for FZ and MCz diodes. The effect of the radiation type, electrons or gamma rays, on the pre dose procedures was analyzed for the FZ n-type device and was observed that the

Interaction between solute atoms and radiation defects in Fe-Ni-Si and Fe-Mn-Si alloys under irradiation with proton ions at low-temperature

Energy Technology Data Exchange (ETDEWEB)

Murakami, Kenta, E-mail: murakami@tokai.t.u-tokyo.ac.jp [Nuclear Professional School, School of Engineering, The University of Tokyo, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki, 319-1188 (Japan); Iwai, Takeo, E-mail: iwai@med.id.yamagata-u.ac.jp [Faculty of Medicine, Yamagata University, 2-2-2 Iida-Nishi, Yamagata, Yamagata-shi, 990-9585 (Japan); Abe, Hiroaki [Nuclear Professional School, School of Engineering, The University of Tokyo, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki, 319-1188 (Japan); Sekimura, Naoto, E-mail: sekimura@n.t.u-tokyo.ac.jp [Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo, 7-3-1, Tokyo, Hongo, Bunkyo, 113-8656 (Japan)

2016-12-15

Isochronal annealing followed by residual resistivity measurements at 12 K was performed in Fe-0.6Ni-0.6Si and Fe-1.5Mn-0.6Si alloys irradiated with 1 MeV proton ions below 70 K, and recovery stages were compared with those of Fe–0.6Ni and Fe–1.5Mn. The effects of silicon addition in the Fe-Ni alloy was observed as the appearance of a new recovery stage at 282–372 K, presumably corresponding to clustering of solute atoms in matrix, and as a change in mixed dumbbell migration at 122–142 K. Silicon addition mitigated the manganese effect in Fe–Mn alloy that is obstructing the recovery of radiation defects. Reduction of resistivity in Fe-Mn-Si alloy also suggested formation of small solute atom clusters.

Proton irradiation effects on organic polymers

International Nuclear Information System (INIS)

Seguchi, T.; Sasuga, T.; Kawakami, W.; Hagiwara, M.; Kohno, I.; Kamitsubo, H.

1987-01-01

Organic polymer films(100 μm thickness) of polyethylene, polypropylene, polyethyleneterephtalate, and polyethersulfone were irradiated by protons of 8 MeV using a cyclotron, and their radiation effects were investigated by the changes of mechanical properties. In order to irradiate protons uniformly over wide area of polymer films, specimens were scanned during proton irradiation using a special apparatus. The absorbed dose was measured by CTA and RCD film dosimeters, and can be determined that 1 μC/cm 2 of 8 MeV proton fluence is equivalent to 54 kGy. For polyethylene and polypropylene, there was no significant difference between proton and electron irradiation for same doses. However, for polyethersulfone the decay of mechanical property was observed to be less than that of irradiation by electron. (author)

Comparison of the microstructure, deformation and crack initiation behavior of austenitic stainless steel irradiated in-reactor or with protons

Energy Technology Data Exchange (ETDEWEB)

Stephenson, Kale J., E-mail: kalejs@umich.edu; Was, Gary S.

2015-01-15

Highlights: • Dislocation loops were the prominent defect, but neutron irradiation caused higher loop density. • Grain boundaries had similar amounts of radiation-induced segregation. • The increment in hardness and yield stress due to irradiation were very similar. • Relative IASCC susceptibility was nearly identical. • The effect of dislocation channel step height on IASCC was similar. - Abstract: The objective of this study was to compare the microstructures, microchemistry, hardening, susceptibility to IASCC initiation, and deformation behavior resulting from proton or reactor irradiation. Two commercial purity and six high purity austenitic stainless steels with various solute element additions were compared. Samples of each alloy were irradiated in the BOR-60 fast reactor at 320 °C to doses between approximately 4 and 12 dpa or by a 3.2 MeV proton beam at 360 °C to a dose of 5.5 dpa. Irradiated microstructures consisted mainly of dislocation loops, which were similar in size but lower in density after proton irradiation. Both irradiation types resulted in the formation of Ni–Si rich precipitates in a high purity alloy with added Si, but several other high purity neutron irradiated alloys showed precipitation that was not observed after proton irradiation, likely due to their higher irradiation dose. Low densities of small voids were observed in several high purity proton irradiated alloys, and even lower densities in neutron irradiated alloys, implying void nucleation was in process. Elemental segregation at grain boundaries was very similar after each irradiation type. Constant extension rate tensile experiments on the alloys in simulated light water reactor environments showed excellent agreement in terms of the relative amounts of intergranular cracking, and an analysis of localized deformation after straining showed a similar response of cracking to surface step height after both irradiation types. Overall, excellent agreement was observed

Optical spectroscopy of vacancy related defects in silicon carbide generated by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Kasper, C.; Sperlich, A.; Simin, D.; Astakhov, G.V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Kraus, H. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Makino, T.; Sato, S.I.; Ohshima, T. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Dyakonov, V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); ZAE Bayern, Wuerzburg (Germany)

2016-07-01

Defects in silicon carbide (SiC) received growing attention in recent years, because they are promising candidates for spin based quantum information processing. In this study we examine silicon vacancies in 4H-SiC crystals generated by proton irradiation. By the use of confocal microscopy the implantation depth of Si vacancies for varying proton energies can be verified. An important issue is to ascertain the nature and distribution of the defects. For this purpose, we use the characteristic photoluminescence spectrum of Si vacancies, whose intensity is proportional to the defect density. Using xyz-scans, where the photoluminescence at each mapping point is recorded, one can thus determine the vacancies nature and their distribution in the SiC crystal. Additionally we verify the nature of the examined defects by measuring their uniquely defined zero-field-splitting by using ODMR associated with defect spins.

Characterization of Czochralski silicon detectors

OpenAIRE

Luukka, Panja-Riina

2006-01-01

This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

Performance of silicon pad detectors after mixed irradiations with neutrons and fast charged hadrons

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G. [Jozef Stefan Institute, Department of Physics, University of Ljubljana, Jamova 39, SI-1000 Ljubljana (Slovenia)], E-mail: Gregor.Kramberger@ijs.si; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M. [Jozef Stefan Institute, Department of Physics, University of Ljubljana, Jamova 39, SI-1000 Ljubljana (Slovenia)

2009-10-11

A large set of silicon pad detectors produced on MCz and FZ wafer of p- and n-type was irradiated in two steps, first by fast charged hadrons followed by reactor neutrons. In this way the irradiations resemble the real irradiation fields at LHC. After irradiations controlled annealing started in steps during which the evolution of full depletion voltage, leakage current and charge collection efficiency was monitored. The damage introduced by different irradiation particles was found to be additive. The most striking consequence of that is a decrease of the full depletion voltage for n-type MCz detectors after additional neutron irradiation. This confirms that effective donors introduced by charged hadron irradiation are compensated by acceptors from neutron irradiation.

Performance of silicon pad detectors after mixed irradiations with neutrons and fast charged hadrons

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2009-01-01

A large set of silicon pad detectors produced on MCz and FZ wafer of p- and n-type was irradiated in two steps, first by fast charged hadrons followed by reactor neutrons. In this way the irradiations resemble the real irradiation fields at LHC. After irradiations controlled annealing started in steps during which the evolution of full depletion voltage, leakage current and charge collection efficiency was monitored. The damage introduced by different irradiation particles was found to be additive. The most striking consequence of that is a decrease of the full depletion voltage for n-type MCz detectors after additional neutron irradiation. This confirms that effective donors introduced by charged hadron irradiation are compensated by acceptors from neutron irradiation.

Comparative study of Si diodes for gamma radiation dosimetry

International Nuclear Information System (INIS)

Pascoalino, Kelly Cristina da Silva

2010-01-01

In this work it is presented the comparative study of Si diodes response for gamma radiation dosimetry. The diodes investigated, grown by float zone (Fz) and magnetic Czochralski (MCz) techniques, were processed at the Physics Institute of Helsinki University in the framework of the research and development of rad-hard silicon devices. To study the dosimetric response of these diodes they were connected in the photovoltaic mode to the input of a digital electrometer to measure the photocurrent signal due to the incidence of gamma-rays from a 60 Co source (Gammacell 220). The dosimetric parameter utilized to study the response of these devices was the charge, obtained trough the integration of the current signals, as a function of the absorbed dose. Studies of the influence of the pre-irradiation procedures on both sensitivity and stability of these diodes showed that the sensitivity decreased with the total absorbed dose but after a preirradiation of about 873 kGy they became more stable. Radiation damage effects eventually produced in the devices were monitored trough dynamic current and capacitance measurements after each irradiation step. Both samples also exhibited good response reproducibility, 2,21% (Fz) and 2,94% (MCz), obtained with 13 consecutive measurements of 15 kGy compared with the equivalent 195 kGy absorbed dose in one step of irradiation. It is important to note that these results are better than those obtained with routine polymethylmethacrylate (PMMA) dosimeters used in radiation processing dosimetry. (author)

High energy proton irradiation effects on SiC Schottky rectifiers

International Nuclear Information System (INIS)

Nigam, S.; Kim, Jihyun; Ren, F.; Chung, G.Y.; MacMillan, M.F.; Dwivedi, R.; Fogarty, T.N.; Wilkins, R.; Allums, K.K.; Abernathy, C.R.; Pearton, S.J.; Williams, J.R.

2002-01-01

4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5x10 7 -5x10 9 cm -2 . The reverse breakdown voltage decreased from ∼500 V in unirradiated devices to ∼-450 V after the highest proton dose. The reverse leakage current at -250 V was approximately doubled under these conditions. The forward current at -2 V decreased by ∼1% (fluence of 5x10 7 cm -2 ) to ∼42% (fluence of 5x10 9 cm -2 ), while the current at lower biases was increased due to the introduction of defect centers. The ideality factor, on-state resistance, and forward turn-on voltage showed modest increases for fluences of ≤5x10 8 cm -2 , but were more strongly affected (increase of 40%-75%) at the highest dose employed

The PIREX proton irradiation facility

Energy Technology Data Exchange (ETDEWEB)

Victoria, M. [Association EURATOM, Villigen (Switzerland)

1995-10-01

The proton Irradiation Experiment (PIREX) is a materials irradiation facility installed in a beam line of the 590 MeV proton accelerator at the Paul Scherrer Institute. Its main purpose is the testing of candidate materials for fusion reactor components. Protons of this energy produce simultaneously displacement damage and spallation products, amongst them helium and can therefore simulate any possible synergistic effects of damage and helium, that would be produced by the fusion neutrons.

The PIREX proton irradiation facility

International Nuclear Information System (INIS)

Victoria, M.

1995-01-01

The proton Irradiation Experiment (PIREX) is a materials irradiation facility installed in a beam line of the 590 MeV proton accelerator at the Paul Scherrer Institute. Its main purpose is the testing of candidate materials for fusion reactor components. Protons of this energy produce simultaneously displacement damage and spallation products, amongst them helium and can therefore simulate any possible synergistic effects of damage and helium, that would be produced by the fusion neutrons

The comparison of microstructure and nanocluster evolution in proton and neutron irradiated Fe–9%Cr ODS steel to 3 dpa at 500 °C

Energy Technology Data Exchange (ETDEWEB)

Swenson, M.J., E-mail: matthewswenson1@u.boisestate.edu; Wharry, J.P.

2015-12-15

A model Fe–9%Cr oxide dispersion strengthened (ODS) steel was irradiated with protons or neutrons to a dose of 3 displacements per atom (dpa) at a temperature of 500 °C, enabling a direct comparison of ion to neutron irradiation effects at otherwise fixed irradiation conditions. The irradiated microstructures were characterized using transmission electron microscopy and atom probe tomography including cluster analysis. Both proton and neutron irradiations produced a comparable void and dislocation loop microstructure. However, the irradiation response of the Ti–Y–O oxide nanoclusters varied. Oxides remained stable under proton irradiation, but exhibited dissolution and an increase in Y:Ti composition ratio under neutron irradiation. Both proton and neutron irradiation also induced varying extents of Si, Ni, and Mn clustering at existing oxide nanoclusters. Protons are able to reproduce the void and loop microstructure of neutron irradiation carried out to the same dose and temperature. However, since nanocluster evolution is controlled by both diffusion and ballistic impacts, protons are rendered unable to reproduce the nanocluster evolution of neutron irradiation at the same dose and temperature. - Highlights: • Fe–9% Cr ODS was irradiated with protons and neutrons to 3 dpa at 500 °C. • Dislocation loop size and density were similar upon proton and neutron irradiation. • Oxide nanocluster size and density decreased more with neutron irradiation. • Oxide Y:Ti ratio increased from 0.54 to 0.97 upon neutron irradiation. • Irradiation induced enrichment of Si, Mn, and Ni at oxide locations.

Irradiation effect on Nite-SiC/SiC composites

International Nuclear Information System (INIS)

Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

2007-01-01

Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

Science.gov (United States)

Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

2013-09-01

Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

Simulations of Proton Implantation in Silicon Carbide (SiC)

Science.gov (United States)

2016-03-31

Simulations of Proton Implantation in Silicon Carbide (SiC) Jonathan P. McCandless, Hailong Chen, Philip X.-L. Feng Electrical Engineering, Case...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...relevant to experimental radiation of SiC layers. Keywords: silicon carbide (SiC); radiation effects; ion implantation ; proton; stopping and range of

Radiation-induced conductivity of doped silicon in response to photon, proton and neutron irradiation

International Nuclear Information System (INIS)

Kishimoto, N.; Amekura, H.; Plaksin, O.A.; Stepanov, V.A.

2000-01-01

The opto-electronic performance of semiconductors during reactor operation is restricted by radiation-induced conductivity (RIC) and the synergistic effects of neutrons/ions and photons. The RICs of Si due to photons, protons and pulsed neutrons have been evaluated, aiming at radiation correlation. Protons of 17 MeV with an ionizing dose rate of 10 3 Gy/s and/or photons (hν=1.3 eV) were used to irradiate impurity-doped Si (2x10 16 B atoms/cm 3 ) at 300 and 200 K. Proton-induced RIC (p-RIC) and photoconductivity (PC) were intermittently detected in an accelerator device. Neutron-induced RIC (n-RIC) was measured for the same Si in a pulsed fast-fission reactor, BARS-6, with a 70-μs pulse of 2x10 12 n/cm 2 (E>0.01 MeV) and a dose rate of up to 6x10 5 Gy/s. The neutron irradiation showed a saturation tendency in the flux dependence at 300 K due to the strong electronic excitation. Normalization of the electronic excitation, including the pulsed regime, gave a fair agreement among the different radiation environments. Detailed comparison among PC, p-RIC and n-RIC is discussed in terms of radiation correlation including the in-pile condition

High-energy and high-fluence proton irradiation effects in silicon solar cells

International Nuclear Information System (INIS)

Yamaguchi, M.; Taylor, S.J.; Yang, M.; Matsuda, S.; Kawasaki, O.; Hisamatsu, T.

1996-01-01

We have examined proton irradiation damage in high-energy (1 endash 10 MeV) and high-fluence (approx-gt 10 13 cm -2 ) Si n + -p-p + structure space solar cells. Radiation testing has revealed an anomalous increase in short-circuit current I sc followed by an abrupt decrease and cell failure, induced by high-fluence proton irradiation. We propose a model to explain these phenomena by expressing the change in carrier concentration p of the base region as a function of the proton fluence in addition to the well-known model where the short-circuit current is decreased by minority-carrier lifetime reduction after irradiation. The reduction in carrier concentration due to majority-carrier trapping by radiation-induced defects has two effects. First, broadening of the depletion layer increases both the generation endash recombination current and also the contribution of the photocurrent generated in this region to the total photocurrent. Second, the resistivity of the base layer is increased, resulting in the abrupt decrease in the short circuit current and failure of the solar cells. copyright 1996 American Institute of Physics

DNA double strand breaks and Hsp70 expression in proton irradiated living cells

International Nuclear Information System (INIS)

Fiedler, Anja; Reinert, Tilo; Tanner, Judith; Butz, Tilman

2007-01-01

DNA double strand breaks (DSBs) in living cells can be directly provoked by ionising radiation. DSBs can be visualized by immunostaining the phosphorylated histone γH2AX. Our concern was to test the feasibility of γH2AX staining for a direct visualization of single proton hits. If single protons produce detectable foci, DNA DSBs could be used as 'biological track detectors' for protons. Ionising radiation can also damage proteins indirectly by inducing free radicals. Heat shock proteins (Hsp) help to refold or even degrade the damaged proteins. The level of the most famous heat shock protein Hsp70 is increased by ionising radiation. We investigated the expression of γH2AX and Hsp70 after cross and line patterned irradiation with counted numbers of 2.25 MeV protons on primary human skin fibroblasts. The proton induced DSBs appear more delocalised than it was expected by the ion hit accuracy. Cooling the cells before the irradiation reduces the delocalisation of DNA DSBs, which is probably caused by the reduced diffusion of DNA damaging agents. Proton irradiation seems to provoke protein damages mainly in the cytoplasm indicated by cytoplasmic Hsp70 aggregates. On the contrary, in control heat shocked cells the Hsp70 was predominantly localized in the cell nucleus. However, the irradiated area could not be recognized, all cells on the Si 3 N 4 window showed a homogenous Hsp70 expression pattern

DNA double strand breaks and Hsp70 expression in proton irradiated living cells

Energy Technology Data Exchange (ETDEWEB)

Fiedler, Anja [Institute for Experimental Physics II, University of Leipzig (Germany) and Faculty of Biology, Pharmacy and Psychology, University of Leipzig (Germany)]. E-mail: afiedler@uni-leipzig.de; Reinert, Tilo [Institute for Experimental Physics II, University of Leipzig (Germany); Tanner, Judith [Clinic and Polyclinic for Radiation Oncology, University of Halle-Wittenberg (Germany); Butz, Tilman [Institute for Experimental Physics II, University of Leipzig (Germany)

2007-07-15

DNA double strand breaks (DSBs) in living cells can be directly provoked by ionising radiation. DSBs can be visualized by immunostaining the phosphorylated histone {gamma}H2AX. Our concern was to test the feasibility of {gamma}H2AX staining for a direct visualization of single proton hits. If single protons produce detectable foci, DNA DSBs could be used as 'biological track detectors' for protons. Ionising radiation can also damage proteins indirectly by inducing free radicals. Heat shock proteins (Hsp) help to refold or even degrade the damaged proteins. The level of the most famous heat shock protein Hsp70 is increased by ionising radiation. We investigated the expression of {gamma}H2AX and Hsp70 after cross and line patterned irradiation with counted numbers of 2.25 MeV protons on primary human skin fibroblasts. The proton induced DSBs appear more delocalised than it was expected by the ion hit accuracy. Cooling the cells before the irradiation reduces the delocalisation of DNA DSBs, which is probably caused by the reduced diffusion of DNA damaging agents. Proton irradiation seems to provoke protein damages mainly in the cytoplasm indicated by cytoplasmic Hsp70 aggregates. On the contrary, in control heat shocked cells the Hsp70 was predominantly localized in the cell nucleus. However, the irradiated area could not be recognized, all cells on the Si{sub 3}N{sub 4} window showed a homogenous Hsp70 expression pattern.

Comparison between rad-hard standard float zone (FZ) and magnetic Czochralski (MCZ) silicon diodes in radiotherapy electron beam dosimetry

Energy Technology Data Exchange (ETDEWEB)

Santos, T.C. dos; Goncalves, J.A.C.; Vasques, M.M.; Tobias, C.C.B. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Tecnologia das Radiacoes; Neves-Junior, W.F.P.; Haddad, C.M.K. [Hospital Sirio Libanes, Sao Paulo, SP (Brazil). Sociedade Beneficente de Senhoras; Harkonen, J. [Helsinki University of Technology (Denmark). Helsinki Inst. of Physics

2010-07-01

Full text. The use of semiconductor detectors has increased in radiotherapy practice since 1980s due to mainly their fast processing time, small sensitive volume and high relative sensitivity to ionizing radiation. Other major advantages of Si devices are excellent repeatability, good mechanical stability, high spatial resolution and the energy independence of mass collision stopping powers ratios (between silicon and water for electron beams with energy from 4 up to 20 MeV). However, ordinary silicon devices are very prone to radiation damage effects. In the last years, the development of radiation tolerant silicon detectors for High Energy Physics experiments has overcome this drawback. In this work we present the preliminary results obtained with a rad-hard epitaxial silicon diode as on-line clinical electron beam dosimeter. The diodes with 25 mm{sup 2} active area, were housed in a PMMA probe and connected, in a photovoltaic mode, to a Keithley 6517B electrometer. During all measurements, the diodes were held between PMMA plates, placed at Zref and centered in a radiation field of 10 cm x 10 cm, with the SSD kept at 100 cm. The devices dosimetric response was evaluated for 6, 9, 12, 15, 18 e 21 MeV electron beams from a Siemens KD 2 Radiotherapy Linear Accelerator, located at Sirio-Libanes Hospital. The radiation induced current in the diodes was registered as a function of the exposure time during 60 s for a fixed 300 MU. To study the short term repeatability, current signals were registered for the same radiation dose, for all energies. The dose-response of the diodes was achieved through the integration of the current signals as a function of the exposure time. The results obtained in the energy range of 6 up to 21 MeV evidenced that, for the same average dose rate of 5.0 cGy/s, the current signals are very stable and repeatable in both cases. For all energies, data shows good instantaneous repeatability with a percentage variation coefficient better than 2

A comparison of 4 MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Anjum, Arshiya; Vinayakprasanna, N.H.; Pradeep, T.M. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore 570025 (India); Krishna, J.B.M. [IUC-DAE CSR, Kolkota 700098 (India); Gnana Prakash, A.P., E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

2016-07-15

N-channel depletion MOSFETs were irradiated with 4 MeV Proton and Co-60 gamma radiation in the dose range of 100 krad(Si) to 100 Mrad(Si). The electrical characteristics of MOSFET such as threshold voltage (V{sub th}), density of interface trapped charges (ΔN{sub it}), density of oxide trapped charges (ΔN{sub ot}), transconductance (g{sub m}), mobility (μ), leakage current (I{sub L}) and drain saturation current (I{sub D} {sub Sat}) were studied as a function of dose. A considerable increase in ΔN{sub it} and ΔN{sub ot} and decrease in V{sub th,}g{sub m}, μ, and I{sub D} {sub Sat} was observed after irradiation. The results of 4 MeV Proton irradiation were compared with that of Co-60 gamma radiation and it is found that the degradation is more for the devices irradiated with 4 MeV Protons when compared with the Co-60 gamma radiation. This indicates that Protons induce more trapped charges in the field oxide region when compared to the gamma radiation.

Acute skin reactions observed in fractionated proton irradiation

International Nuclear Information System (INIS)

Arimoto, Takuro; Maruhashi, Noboru; Takada, Yoshihisa; Hayakawa, Yoshinori; Inada, Tetsuo; Kitagawa, Toshio

1989-01-01

Between May 1985 and July 1987, 49 skin reactions of 43 patients treated by proton irradiation were observed at the Particle Radiation Medical Science Center (PARMS), the University of Tsukuba. Taking the peak skin score as an endpoint, the radiobiological effects [relative biological effectiveness (RBE) and time-dose relationship] of the proton beam in multi-fractionated treatments were estimated. Factors influencing the skin dose, such as the prescribed tumor dose, tumor site, and number of applied fields, were also analyzed. The following conclusions regarding acute skin reactions to the clinical use of proton irradiation were obtained: 1) the physical skin-sparing effect of proton irradiation in single-field irradiation, especially in superficial regions, is not large compared with that of high-energy photon irradiation; 2) multidirectional proton irradiation significantly reduced the skin dose and severity of acute reasons; 3) the radiobiological effects of the proton beam, RBE and the time factor, estimated in human skin in multi-fractional treatment were slightly smaller than those of X-rays, i.e., 0.92 and -0.25±0.09, respectively. (author)

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

Science.gov (United States)

Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

2017-05-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

Electron dosimetry in irradiation processing with rad-hard diodes

International Nuclear Information System (INIS)

Santos, Thais Cavalheri dos

2012-01-01

This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar® window and LEMO® connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for electron beams within the

Low dose irradiation performance of SiC interphase SiC/SiC composites

International Nuclear Information System (INIS)

Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

1998-01-01

Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

Science.gov (United States)

Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

2018-03-01

The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

International Nuclear Information System (INIS)

Lagov, P B; Drenin, A S; Zinoviev, M A

2017-01-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding. (paper)

Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation

International Nuclear Information System (INIS)

Yamaguchi, M.; Takamoto, T.; Taylor, S.J.; Walters, R.J.; Summers, G.P.; Flood, D.J.; Ohmori, M.

1997-01-01

The damage to diffused-junction n + -p InP solar cells induced by electron and proton irradiations over a wide range of energy from 0.5 to 3 MeV and 0.015 to 20 MeV, respectively, has been examined. The experimental electron and proton damage coefficients have been analyzed in terms of displacement damage dose, which is the product of the particle fluence and the calculated nonionizing energy loss [G. P. Summers, E. A. Burke, R. Shapiro, S. R. Messenger, and R. J. Walters, IEEE Trans. Nucl. Sci. 40, 1300 (1993).] Degradation of InP cells due to irradiation with electrons and protons with energies of more than 0.5 MeV show a single curve as a function of displacement damage dose. Based on the deep-level transient spectroscopy analysis, damage equivalence between electron and proton irradiation is discussed. InP solar cells are confirmed to be substantially more radiation resistant than Si and GaAs-on-Ge cells. copyright 1997 American Institute of Physics

Irradiation damage of SiC semiconductor device (I)

International Nuclear Information System (INIS)

Park, Ji Yeon; Kim, Weon Ju

2000-09-01

This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10 16 N + ions/cm 2 and 3.6 x 10 17 e/cm 2 and 1.08 x 10 18 e/cm 2 , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix

Irradiation damage of SiC semiconductor device (I)

Energy Technology Data Exchange (ETDEWEB)

Park, Ji Yeon; Kim, Weon Ju

2000-09-01

This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.

Effect of irradiation on thermal expansion of SiCf/SiC composites

International Nuclear Information System (INIS)

Senor, D.J.; Trimble, D.J.; Woods, J.J.

1996-06-01

Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC f /SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) β-SiC at all temperatures

Etch pit investigation of free electron concentration controlled 4H-SiC

Science.gov (United States)

Kim, Hong-Yeol; Shin, Yun Ji; Kim, Jung Gon; Harima, Hiroshi; Kim, Jihyun; Bahng, Wook

2013-04-01

Etch pits were investigated using the molten KOH selective etching method to examine dependence of etch pit shape and size on free electron concentration. The free electron concentrations of highly doped 4H-silicon carbide (SiC) were controlled by proton irradiation and thermal annealing, which was confirmed by a frequency shift in the LO-phonon-plasmon-coupled (LOPC) mode on micro-Raman spectroscopy. The proton irradiated sample with 5×1015 cm-2 fluence and an intrinsic semi-insulating sample showed clearly classified etch pits but different ratios of threading screw dislocation (TSD) and threading edge dislocation (TED) sizes. Easily classified TEDs and TSDs on proton irradiated 4H-SiC were restored as highly doped 4H-SiC after thermal annealing due to the recovered carrier concentrations. The etched surface of proton irradiated 4H-SiC and boron implanted SiC showed different surface conditions after activation.

Compaction of PDMS due to proton beam irradiation

International Nuclear Information System (INIS)

Szilasi, S.Z.; Huszank, R.; Rajta, I.; Kokavecz, J.

2011-01-01

Complete text of publication follows. This work is about the detailed investigation of the changes of the surface topography, the degree of compaction/shrinkage and its relation to the irradiation fluence and the structure spacing in poly(dimethylsiloxane) (PDMS) patterned with 2 MeV proton microbeam. Sylgard 184 kit (Dow-Corning) was used to create the PDMS samples. The density of the PDMS samples was determined with pycnometer. The penetration depth for 2 MeV protons is ∼85 μm, the PDMS layer was ∼95 μm thick, so the incident protons stop in the PDMS, they do not reach the substrate. The irradiations have been performed at the nuclear microprobe facility at ATOMKI. The irradiated periodic structures consisted of parallel lines with different widths and spacing. To achieve different degrees of compaction, each structure was irradiated with five different fluences. The surface topography, the phase modification of the surface, and the connection between them were revealed using an atomic force microscope (AFM PSIA XE 100). The shrinkage data were obtained from the topography images. The structures with different line widths and spacing show different degrees of compaction as a function of irradiation fluence. By plotting them in the same graph (Fig. 1) it is clearly seen that the degree of compaction depends on both the irradiation fluence and the distance of the structures. The fluence dependence of the compaction can be explained with the chemical changes of PDMS. When an energetic ion penetrates through the material it scissions the polymer chain, whereupon among other things volatile products form. In the case of PDMS, these are mainly hydrogen, methane and ethane gases that can be released from PDMS. The irradiated volume shrinks due to significant structural change during which silicate derivatives (SiO x ) are formed. The phase change and the corresponding surface topography was compared and studied at all applied irradiation fluences. It was concluded

GINES: first rice mutant obtained from proton irradiation

International Nuclear Information System (INIS)

Gonzalez, Maria C; Perez, Noraida; Cristo, Elizabeth

2009-01-01

A new rice variety of a good productive potential and salinity tolerance was obtained at the National Institute of Agricultural Sciences (INCA), starting from in vitro culture of J-104 rice seeds irradiated with protons. This is the first report of a variety achieved by proton irradiation

Energy-dependent proton damage in silicon

Energy Technology Data Exchange (ETDEWEB)

Donegani, Elena Maria

2017-09-29

Non Ionizing Energy Loss (NIEL) in the sensor bulk is a limiting factor for the lifetime of silicon detectors. In this work, the proton-energy dependent bulkdamage is studied in n- and p-type silicon pad diodes. The samples are thin (200 μm thick), and oxygen enriched (bulk material types: MCz, standard or deepdiffused FZ). Irradiations are performed with 23 MeV, 188 MeV and 23 GeV protons; the 1 MeV neutron equivalent fluence assumes selected values in the range [0.1,3].10{sup 14} cm{sup -2}. In reverse bias, Current-Voltage (IV) and Capacitance-Voltage (CV) measurements are performed to electrically characterise the samples; in forward bias, IV and CV measurements point out the transition from lifetime to relaxationlike semiconductor after irradiation. By means of Thermally Stimulated Current (TSC) measurements, 13 bulk defects have been found after proton irradiation. Firstly, TSC spectra are analysed to obtain defect concentrations after defect filling at the conventional temperature T{sub fill} =10 K. Secondly, temperature dependent capture coefficients of bulk defects are explained, according to the multi-phonon process, from the analysis of TSC measurements at higher filling temperatures (T{sub fill}<130 K). Thirdly, a new method based on the SRH statistics and accounting for cluster-induced shift in activation energy is proposed; it allows to fully characterise bulk defects (in terms of activation energy, concentration and majority capture cross-section) and to distinguish between point- and cluster-like defects. A correlation is noted between the leakage current and the concentration of three deep defects (namely the V{sub 2}, V{sub 3} and H(220K) defects), for all the investigated bulk materials and types, and after all the considered proton energies and fluences. At least five defects are found to be responsible for the space charge, with positive contributions from the E(30K) and B{sub i}O{sub i} defects, or negative contributions from three deep

Energy-dependent proton damage in silicon

International Nuclear Information System (INIS)

Donegani, Elena Maria

2017-01-01

Non Ionizing Energy Loss (NIEL) in the sensor bulk is a limiting factor for the lifetime of silicon detectors. In this work, the proton-energy dependent bulkdamage is studied in n- and p-type silicon pad diodes. The samples are thin (200 μm thick), and oxygen enriched (bulk material types: MCz, standard or deepdiffused FZ). Irradiations are performed with 23 MeV, 188 MeV and 23 GeV protons; the 1 MeV neutron equivalent fluence assumes selected values in the range [0.1,3].10 14 cm -2 . In reverse bias, Current-Voltage (IV) and Capacitance-Voltage (CV) measurements are performed to electrically characterise the samples; in forward bias, IV and CV measurements point out the transition from lifetime to relaxationlike semiconductor after irradiation. By means of Thermally Stimulated Current (TSC) measurements, 13 bulk defects have been found after proton irradiation. Firstly, TSC spectra are analysed to obtain defect concentrations after defect filling at the conventional temperature T fill =10 K. Secondly, temperature dependent capture coefficients of bulk defects are explained, according to the multi-phonon process, from the analysis of TSC measurements at higher filling temperatures (T fill <130 K). Thirdly, a new method based on the SRH statistics and accounting for cluster-induced shift in activation energy is proposed; it allows to fully characterise bulk defects (in terms of activation energy, concentration and majority capture cross-section) and to distinguish between point- and cluster-like defects. A correlation is noted between the leakage current and the concentration of three deep defects (namely the V 2 , V 3 and H(220K) defects), for all the investigated bulk materials and types, and after all the considered proton energies and fluences. At least five defects are found to be responsible for the space charge, with positive contributions from the E(30K) and B i O i defects, or negative contributions from three deep acceptors H(116K), H(140K) and H(152K).

Proton irradiation effects in silicon devices

Energy Technology Data Exchange (ETDEWEB)

Simoen, E; Vanhellemont, J; Alaerts, A [IMEC, Leuven (Belgium); and others

1997-03-01

Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x10{sup 9} cm{sup -2} to 5x10{sup 11} cm{sup -2}. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 {mu}m CCD-CMOS technology are shown to be quite resistant to 59 MeV H{sup +} irradiations, irrespective of the substrate type. (author)

Proton irradiation effects on beryllium – A macroscopic assessment

Energy Technology Data Exchange (ETDEWEB)

Simos, Nikolaos, E-mail: simos@bnl.gov [Nuclear Sciences & Technology Department, Brookhaven National Laboratory, Upton, NY, 11973 (United States); Elbakhshwan, Mohamed [Nuclear Sciences & Technology Department, Brookhaven National Laboratory, Upton, NY, 11973 (United States); Zhong, Zhong [Photon Sciences, NSLS II, Brookhaven National Laboratory, Upton, NY, 11973 (United States); Camino, Fernando [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973 (United States)

2016-10-15

Beryllium, due to its excellent neutron multiplication and moderation properties, in conjunction with its good thermal properties, is under consideration for use as plasma facing material in fusion reactors and as a very effective neutron reflector in fission reactors. While it is characterized by unique combination of structural, chemical, atomic number, and neutron absorption cross section it suffers, however, from irradiation generated transmutation gases such as helium and tritium which exhibit low solubility leading to supersaturation of the Be matrix and tend to precipitate into bubbles that coalesce and induce swelling and embrittlement thus degrading the metal and limiting its lifetime. Utilization of beryllium as a pion production low-Z target in high power proton accelerators has been sought both for its low Z and good thermal properties in an effort to mitigate thermos-mechanical shock that is expected to be induced under the multi-MW power demand. To assess irradiation-induced changes in the thermal and mechanical properties of Beryllium, a study focusing on proton irradiation damage effects has been undertaken using 200 MeV protons from the Brookhaven National Laboratory Linac and followed by a multi-faceted post-irradiation analysis that included the thermal and volumetric stability of irradiated beryllium, the stress-strain behavior and its ductility loss as a function of proton fluence and the effects of proton irradiation on the microstructure using synchrotron X-ray diffraction. The mimicking of high temperature irradiation of Beryllium via high temperature annealing schemes has been conducted as part of the post-irradiation study. This paper focuses on the thermal stability and mechanical property changes of the proton irradiated beryllium and presents results of the macroscopic property changes of Beryllium deduced from thermal and mechanical tests.

Proton irradiation effects on gallium nitride-based devices

Science.gov (United States)

Karmarkar, Aditya P.

Proton radiation effects on state-of-the-art gallium nitride-based devices were studied using Schottky diodes and high electron-mobility transistors. The device degradation was studied over a wide range of proton fluences. This study allowed for a correlation between proton irradiation effects between different types of devices and enhanced the understanding of the mechanisms responsible for radiation damage in GaN-based devices. Proton irradiation causes reduced carrier concentration and increased series resistance and ideality factor in Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher non-ionizing energy loss. The displacement damage in Schottky diodes recovers during annealing. High electron-mobility transistors exhibit extremely high radiation tolerance, continuing to perform up to a fluence of ˜1014 cm-2 of 1.8-MeV protons. Proton irradiation creates defect complexes in the thin-film structure. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal by the defect centers are the primary damage mechanisms. Interface disorder at either the Schottky or the Ohmic contact plays a relatively unimportant part in overall device degradation in both Schottky diodes and high electron-mobility transistors.

Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

International Nuclear Information System (INIS)

Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

2007-01-01

Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

Science.gov (United States)

Jain, Raj K.; Weinberg, Irving; Flood, Dennis J.

1993-01-01

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

Technique for sparing previously irradiated critical normal structures in salvage proton craniospinal irradiation

International Nuclear Information System (INIS)

McDonald, Mark W; Wolanski, Mark R; Simmons, Joseph W; Buchsbaum, Jeffrey C

2013-01-01

Cranial reirradiation is clinically appropriate in some cases but cumulative radiation dose to critical normal structures remains a practical concern. The authors developed a simple technique in 3D conformal proton craniospinal irradiation (CSI) to block organs at risk (OAR) while minimizing underdosing of adjacent target brain tissue. Two clinical cases illustrate the use of proton therapy to provide salvage CSI when a previously irradiated OAR required sparing from additional radiation dose. The prior radiation plan was coregistered to the treatment planning CT to create a planning organ at risk volume (PRV) around the OAR. Right and left lateral cranial whole brain proton apertures were created with a small block over the PRV. Then right and left lateral “inverse apertures” were generated, creating an aperture opening in the shape of the area previously blocked and blocking the area previously open. The inverse aperture opening was made one millimeter smaller than the original block to minimize the risk of dose overlap. The inverse apertures were used to irradiate the target volume lateral to the PRV, selecting a proton beam range to abut the 50% isodose line against either lateral edge of the PRV. Together, the 4 cranial proton fields created a region of complete dose avoidance around the OAR. Comparative photon treatment plans were generated with opposed lateral X-ray fields with custom blocks and coplanar intensity modulated radiation therapy optimized to avoid the PRV. Cumulative dose volume histograms were evaluated. Treatment plans were developed and successfully implemented to provide sparing of previously irradiated critical normal structures while treating target brain lateral to these structures. The absence of dose overlapping during irradiation through the inverse apertures was confirmed by film. Compared to the lateral X-ray and IMRT treatment plans, the proton CSI technique improved coverage of target brain tissue while providing the least

Phenomenological inelastic constitutive equations for SiC and SiC fibers under irradiation

International Nuclear Information System (INIS)

El-Azab, A.; Ghoniem, N.M.

1994-01-01

Experimental data on irradiation-induced dimensional changes and creep in β-SiC and SiC fibers is analyzed, with the objective of studying the constitutive behavior of these materials under high-temperature irradiation. The data analysis includes empirical representation of irradiation-induced dimensional changes in SiC matrix and SiC fibers as function of time and irradiation temperature. The analysis also includes formulation of simple scaling laws to extrapolate the existing data to fusion conditions on the basis of the physical mechanisms of radiation effects on crystalline solids. Inelastic constitutive equations are then developed for SCS-6 SiC fibers, Nicalon fibers and CVD SiC. The effects of applied stress, temperature, and irradiation fields on the deformation behavior of this class of materials are simultaneously represented. Numerical results are presented for the relevant creep functions under the conditions of the fusion reactor (ARIES IV) first wall. The developed equations can be used in estimating the macro mechanical properties of SiC-SiC composite systems as well as in performing time-dependent micro mechanical analysis that is relevant to slow crack growth and fiber pull-out under fusion conditions

Charge collection in Si detectors irradiated in situ at superfluid helium temperature

Energy Technology Data Exchange (ETDEWEB)

Verbitskaya, Elena, E-mail: elena.verbitskaya@cern.ch [Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg 194021 (Russian Federation); Eremin, Vladimir; Zabrodskii, Andrei [Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg 194021 (Russian Federation); Dehning, Bernd; Kurfürst, Christoph; Sapinski, Mariusz; Bartosik, Marcin R. [CERN, CH-1211, Geneva 23 (Switzerland); Egorov, Nicolai [Research Institute of Material Science and Technology, 4 Passage 4806, Moscow, Zelenograd 124460 (Russian Federation); Härkönen, Jaakko [Helsinki Institute of Physics, P.O.Box 64 (Gustaf Hallströmin katu 2) FI-00014 University of Helsinki (Finland)

2015-10-01

Silicon and diamond detectors operated in a superfluid helium bath are currently being considered for the upgrade of the LHC beam loss monitoring system. The detectors would be installed in immediate proximity of the superconducting coils of the triplet magnets. We present here the results of the in situ irradiation test for silicon detectors using 23 GeV protons while keeping the detectors at a temperature of 1.9 K. Red laser (630 nm) Transient Current Technique and DC current measurements were used to study the pulse response and collected charge for silicon detectors irradiated to a maximum radiation fluence of 1×10{sup 16} p/cm{sup 2}. The dependence between collected charge and irradiation fluence was parameterized using the Hecht equation and assumption of a uniform electric field distribution. The collected charge was found to degrade with particle fluence for both bias polarities. We observed that the main factor responsible for this degradation was related to trapping of holes on the donor-type radiation-induced defects. In contrast to expectations, along with formation of donors, acceptor-type defects (electron traps) are introduced into the silicon bulk. This suggests that the current models describing charge collection in irradiated silicon detectors require an extension for taking into account trapping at low temperatures with a contribution of shallow levels. New in situ irradiation tests are needed and planned now to extend statistics of the results and gain a deeper insight into the physics of low temperature detector operation in harsh radiation environment. - Highlights: • Si detectors irradiated in situ at 1.9 K by 23 GeV protons are further studied. • Trapping parameters are derived from the fits of collected charge vs. fluence data. • Acceptor-type defects are likely to be induced along with donor-type ones. • Trapping of holes has a dominating effect on the collected charge degradation. • New tests are planned to gain deeper insight

Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

International Nuclear Information System (INIS)

Kohyama, Akira; Kishimoto, Hirotatsu

2015-01-01

After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

Effects of dual-ion irradiation on the swelling of SiC/SiC composites

International Nuclear Information System (INIS)

Kishimoto, Hirotatsu; Kohyama, Akira; Ozawa, Kazumi; Kondo, Sosuke

2005-01-01

Silicon carbide (SiC) matrix composites reinforced by SiC fibers is a candidate structural material of fusion gas-cooled blanket system. From the viewpoint of material designs, it is important to investigate the swelling by irradiation, which results from the accumulation of displacement damages. In the fusion environment, (n, α) nuclear reactions are considered to produce helium gas in SiC. For the microstructural evolution, a dual-ion irradiation method is able to simulate the effects of helium. In the present research, 1.7 MeV tandem and 1 MeV single-end accelerators were used for Si self-ion irradiation and helium implantation, respectively. The average helium over displacement per atom (dpa) ratio in SiC was adjusted to 60 appm/dpa. The irradiation temperature ranged from room temperature to 1400degC. The irradiation-induced swelling was measured by the step height method. Helium that was implanted simultaneously with displacement damages in dual-ion irradiated SiC increased the swelling that was larger than that by single-ion irradiated SiC below 800degC. Since this increase was not observed above 1000degC, the interaction of helium and displacement damages was considered to change above 800degC. In this paper, the microstructural behavior and dimensional stability of SiC materials under the fusion relevant environment are discussed. (author)

Positron lifetime study of copper irradiated by energetic protons or energetic neutrons

International Nuclear Information System (INIS)

Howell, R.H.

1979-03-01

Positron lifetime measurements of pure copper damaged by irradiation with energetic protons and neutrons are presented. Lifetime determinations of the bulk material and various traps were made, and the dependence of the trapping rate on dose and irradiation energy were investigated. The results from the neutron- and proton-irradiated samples point to the existence of traps with similar but distinct lifetime parameters, not varying greatly from values reported in deformation studies. Also, a trap with long lifetime is seen for some proton irradiations, but is never seen for the neutron irradiations. The trapping rate of the short-lifetime trap is a linear function of dose for proton-irradiated samples and nearly so for the neutron irradiation. 1 figure

Modification of polycrystalline copper by proton irradiation

International Nuclear Information System (INIS)

Garcia S, F.; Cabral P, A.; Saniger B, J.M.; Banuelos, J.G.; Barragan V, A.

1997-01-01

Polished copper samples were irradiated with proton beams of 300 and 700 keV at room temperature and at -150 Centigrade. In this work the obtained results are reported when such copper irradiated samples are analysed with Sem, Tem, AFM. The Sem micrographs showed evident changes in surface of these copper samples, therefore an EDAX microanalysis was done for its characterization. additionally, the Tem micrographs showed heaps formation until 200 nm. Its electron diffraction spectra indicated that these heaps consist of a copper compound. Finally with AFM were observed changes in coloration of the irradiated sample surface, as well as changes in texture and rugosity of them. These results show in general that irradiation process with protons which is known as an innocuo process produces changes in the copper properties. (Author)

Study of the irradiation defects in 3C-SiC

International Nuclear Information System (INIS)

Lefevre, J.

2007-01-01

This work deals with the study of the irradiation defects in the cubic polytype 3C of the n type silicon carbide. Low temperature photoluminescence and electron spin resonance techniques have been used. In situ photoluminescence measurements after irradiation at 10 K by electrons have shown that the nature of the defects induced is identical to those observed after irradiation at ambient temperature with electrons, protons or carbon ions. No regeneration of these defects has been revealed after in situ annealings until 300 K. The electrons Van de Graff accelerator of the Irradiated Solid Laboratory has allowed to irradiate sample of 3C in a range of energies between 190 keV and 1 MeV. It has then been possible to estimate the appearance threshold of the irradiation defects but especially to be able to determine the displacement threshold energy of silicon in this SiC polytype. The found value of 25 eV is in good agreement with the first experimental result proposed by X. Kerbiriou with the use of the ESR. Annealings in the range of high temperatures have been carried out. The evolution of the irradiation defects has been followed in photoluminescence and in ESR. The results show that, in one part, the vacancy of the silicon negatively charged is essentially the only compensating defect in 3C-SiC of n type and that, in another part, the majority of the defects are annealed below 1200 C. Only the D1 defect remains after annealings until 1600 C. The D1 center is in fact a native defect in SiC; indeed, it has been identified alone in non irradiated samples. A systematic study of these last samples show the absence of D1 in samples strongly compensated. The compared results of photoluminescence and of positons annihilation are in good agreement for the possible attribution of D1 to the bi-vacancy V C -V Si . One of the most interesting result of this last work has been obtained using the ESR technique under excitation with a neodymium laser. The measurements, carried

Precipitation in Zr-2.5Nb enhanced by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Cann, C. D.; So, C. B.; Styles, R. C.; Coleman, C. E.

1993-08-15

A 3.6 MeV proton irradiation of annealed Zr-2.5Nb has been performed to determine whether proton irradiation will enhance the precipitation of Nb-rich {beta}-phase precipitates within the {alpha}-grains. a transmission electron microscope examination of a foil after irradiation at 770 K for 18 h and at 720 K for 264.5 h to a total damage of 0.94 dpa revealed a fine dispersion of precipitates within the {alpha}-grains. Electron diffraction analysis of the precipitates found they have lattice plane spacings consistent with the Nb-rich {beta}-phase. This result is in agreement with the {beta}phase precipitation observed following neutron irradiation, and thus it supports the use of proton irradiation to simulate neutron-irradiation effects in Zr-2.5Nb.

Precipitation in Zr-2.5Nb enhanced by proton irradiation

International Nuclear Information System (INIS)

Cann, C.D.; So, C.B.; Styles, R.C.; Coleman, C.E.

1993-08-01

A 3.6 MeV proton irradiation of annealed Zr-2.5Nb has been performed to determine whether proton irradiation will enhance the precipitation of Nb-rich β-phase precipitates within the α-grains. a transmission electron microscope examination of a foil after irradiation at 770 K for 18 h and at 720 K for 264.5 h to a total damage of 0.94 dpa revealed a fine dispersion of precipitates within the α-grains. Electron diffraction analysis of the precipitates found they have lattice plane spacings consistent with the Nb-rich β-phase. This result is in agreement with the βphase precipitation observed following neutron irradiation, and thus it supports the use of proton irradiation to simulate neutron-irradiation effects in Zr-2.5Nb

Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

1997-01-01

Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

Dielectric properties of proton irradiated PES

International Nuclear Information System (INIS)

Shah, Nilam; Singh, N.L.; Singh, K.P.

2005-01-01

Polyethersulfone films were irradiated with 3 MeV proton beam at fluences ranging from 10 13 to 10 15 ions/cm 2 . AC electrical properties of irradiated samples were studied in the frequency range 100 Hz to 1MHz by LCR meter. There is an exponential increase in conductivity with frequency but the effect of irradiation is not significant. The dielectric loss/constant are observed to change with fluence. (author)

Specimen size effect considerations for irradiation studies of SiC/SiC

Energy Technology Data Exchange (ETDEWEB)

Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

1996-10-01

For characterization of the irradiation performance of SiC/SiC, limited available irradiation volume generally dictates that tests be conducted on a small number of relatively small specimens. Flexure testing of two groups of bars with different sizes cut from the same SiC/SiC plate suggested the following lower limits for flexure specimen number and size: Six samples at a minimum for each condition and a minimum bar size of 30 x 6.0 x 2.0 mm{sup 3}.

Luminescence imaging of water during proton-beam irradiation for range estimation

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Seiichi, E-mail: s-yama@met.nagoya-u.ac.jp; Okumura, Satoshi; Komori, Masataka [Radiological and Medical Laboratory Sciences, Nagoya University Graduate School of Medicine, Nagoya 461-8673 (Japan); Toshito, Toshiyuki [Department of Proton Therapy Physics, Nagoya Proton Therapy Center, Nagoya City West Medical Center, Nagoya 462-8508 (Japan)

2015-11-15

Purpose: Proton therapy has the ability to selectively deliver a dose to the target tumor, so the dose distribution should be accurately measured by a precise and efficient method. The authors found that luminescence was emitted from water during proton irradiation and conjectured that this phenomenon could be used for estimating the dose distribution. Methods: To achieve more accurate dose distribution, the authors set water phantoms on a table with a spot scanning proton therapy system and measured the luminescence images of these phantoms with a high-sensitivity, cooled charge coupled device camera during proton-beam irradiation. The authors imaged the phantoms of pure water, fluorescein solution, and an acrylic block. Results: The luminescence images of water phantoms taken during proton-beam irradiation showed clear Bragg peaks, and the measured proton ranges from the images were almost the same as those obtained with an ionization chamber. Furthermore, the image of the pure-water phantom showed almost the same distribution as the tap-water phantom, indicating that the luminescence image was not related to impurities in the water. The luminescence image of the fluorescein solution had ∼3 times higher intensity than water, with the same proton range as that of water. The luminescence image of the acrylic phantom had a 14.5% shorter proton range than that of water; the proton range in the acrylic phantom generally matched the calculated value. The luminescence images of the tap-water phantom during proton irradiation could be obtained in less than 2 s. Conclusions: Luminescence imaging during proton-beam irradiation is promising as an effective method for range estimation in proton therapy.

Luminescence imaging of water during proton-beam irradiation for range estimation

International Nuclear Information System (INIS)

Yamamoto, Seiichi; Okumura, Satoshi; Komori, Masataka; Toshito, Toshiyuki

2015-01-01

Purpose: Proton therapy has the ability to selectively deliver a dose to the target tumor, so the dose distribution should be accurately measured by a precise and efficient method. The authors found that luminescence was emitted from water during proton irradiation and conjectured that this phenomenon could be used for estimating the dose distribution. Methods: To achieve more accurate dose distribution, the authors set water phantoms on a table with a spot scanning proton therapy system and measured the luminescence images of these phantoms with a high-sensitivity, cooled charge coupled device camera during proton-beam irradiation. The authors imaged the phantoms of pure water, fluorescein solution, and an acrylic block. Results: The luminescence images of water phantoms taken during proton-beam irradiation showed clear Bragg peaks, and the measured proton ranges from the images were almost the same as those obtained with an ionization chamber. Furthermore, the image of the pure-water phantom showed almost the same distribution as the tap-water phantom, indicating that the luminescence image was not related to impurities in the water. The luminescence image of the fluorescein solution had ∼3 times higher intensity than water, with the same proton range as that of water. The luminescence image of the acrylic phantom had a 14.5% shorter proton range than that of water; the proton range in the acrylic phantom generally matched the calculated value. The luminescence images of the tap-water phantom during proton irradiation could be obtained in less than 2 s. Conclusions: Luminescence imaging during proton-beam irradiation is promising as an effective method for range estimation in proton therapy

Irradiation-induced precipitation in Ni--Si alloys

International Nuclear Information System (INIS)

Barbu, A.; Ardell, A.J.

1975-07-01

The microstructures of Ni + ion-irradiated Ni--Si solid-solution alloys, containing 2, 4, 6 and 8 at. percent Si were investigated as a function of dose, dose-rate, and temperature. Results of transmission electron microscopy and other data show the precipitation of γ' (Ni 3 Si) in all samples irradiated at 500 0 C. Characteristics of the precipitates are described and a mechanism for their formation is suggested. (U.S.)

Activation of 45-MeV proton irradiation and proton-induced neutron irradiation in polymers

International Nuclear Information System (INIS)

Ra, Se-Jin; Kim, Kye-Ryung; Jung, Myung-Hwan; Yang, Tae-Keon

2010-01-01

During beam irradiation experiments with more than a few MeV energetic protons, the sample activation problem can be very severe because it causes many kinds of additional problems for the post-processing of the samples, such as time loss, inconvenience of sample handling, personal radiation safety, etc. The most serious problem is that immediate treatment of the sample is impossible in some experiments, such as nano-particle synthesizing. To solve these problems, we studied why the samples are activated and how the level of the activation can be reduced. It is known that the main reasons of activation are nuclear reactions with elements of the target material by primary protons and secondary produced neutrons. Even though the irradiation conditions are same, the level of the activation can be different depending on the target materials. For the nanoparticle synthesizing experiments, the target materials can be defined as the container and the sample itself. The reduction of the activation from the container is easier than the reduction from the sample. Therefore, we tried to reduce the activation level by changing the container materials. In this paper, the results are displayed for some candidate container materials, such as polymethyl methacrylate, polystyrene, Glass, etc., with 45-MeV and 10-nA proton beams. As a result, PS is the most suitable material for the container because of its relatively low level of the activation by protons. Also the contribution of secondary produced neutrons to the activation is negligible.

Proton irradiation of liquid crystal based adaptive optical devices

International Nuclear Information System (INIS)

Buis, E.J.; Berkhout, G.C.G.; Love, G.D.; Kirby, A.K.; Taylor, J.M.; Hannemann, S.; Collon, M.J.

2012-01-01

To assess its radiation hardness, a liquid crystal based adaptive optical element has been irradiated using a 60 MeV proton beam. The device with the functionality of an optical beam steerer was characterised before, during and after the irradiation. A systematic set of measurements on the transmission and beam deflection angles was carried out. The measurements showed that the transmission decreased only marginally and that its optical performance degraded only after a very high proton fluence (10 10 p/cm 2 ). The device showed complete annealing in the functionality as a beam steerer, which leads to the conclusion that the liquid crystal technology for optical devices is not vulnerable to proton irradiation as expected in space.

Proton irradiation of liquid crystal based adaptive optical devices

Energy Technology Data Exchange (ETDEWEB)

Buis, E.J., E-mail: ernst-jan.buis@tno.nl [cosine Science and Computing BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands); Berkhout, G.C.G. [cosine Science and Computing BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands); Huygens Laboratory, Leiden University, P.O. Box 9504, 2300 RA Leiden (Netherlands); Love, G.D.; Kirby, A.K.; Taylor, J.M. [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Hannemann, S.; Collon, M.J. [cosine Research BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands)

2012-01-01

To assess its radiation hardness, a liquid crystal based adaptive optical element has been irradiated using a 60 MeV proton beam. The device with the functionality of an optical beam steerer was characterised before, during and after the irradiation. A systematic set of measurements on the transmission and beam deflection angles was carried out. The measurements showed that the transmission decreased only marginally and that its optical performance degraded only after a very high proton fluence (10{sup 10}p/cm{sup 2}). The device showed complete annealing in the functionality as a beam steerer, which leads to the conclusion that the liquid crystal technology for optical devices is not vulnerable to proton irradiation as expected in space.

Surface, structural and tensile properties of proton beam irradiated zirconium

Energy Technology Data Exchange (ETDEWEB)

Rafique, Mohsin; Chae, San; Kim, Yong-Soo, E-mail: yongskim@hanyang.ac.kr

2016-02-01

This paper reports the surface, structural and tensile properties of proton beam irradiated pure zirconium (99.8%). The Zr samples were irradiated by 3.5 MeV protons using MC-50 cyclotron accelerator at different doses ranging from 1 × 10{sup 13} to 1 × 10{sup 16} protons/cm{sup 2}. Both un-irradiated and irradiated samples were characterized using Field Emission Scanning Electron Microscope (FESEM), X-ray Diffraction (XRD) and Universal Testing Machine (UTM). The average surface roughness of the specimens was determined by using Nanotech WSxM 5.0 develop 7.0 software. The FESEM results revealed the formation of bubbles, cracks and black spots on the samples’ surface at different doses whereas the XRD results indicated the presence of residual stresses in the irradiated specimens. Williamson–Hall analysis of the diffraction peaks was carried out to investigate changes in crystallite size and lattice strain in the irradiated specimens. The tensile properties such as the yield stress, ultimate tensile stress and percentage elongation exhibited a decreasing trend after irradiation in general, however, an inconsistent behavior was observed in their dependence on proton dose. The changes in tensile properties of Zr were associated with the production of radiation-induced defects including bubbles, cracks, precipitates and simultaneous recovery by the thermal energy generated with the increase of irradiation dose.

Surface, structural and tensile properties of proton beam irradiated zirconium

Science.gov (United States)

Rafique, Mohsin; Chae, San; Kim, Yong-Soo

2016-02-01

This paper reports the surface, structural and tensile properties of proton beam irradiated pure zirconium (99.8%). The Zr samples were irradiated by 3.5 MeV protons using MC-50 cyclotron accelerator at different doses ranging from 1 × 1013 to 1 × 1016 protons/cm2. Both un-irradiated and irradiated samples were characterized using Field Emission Scanning Electron Microscope (FESEM), X-ray Diffraction (XRD) and Universal Testing Machine (UTM). The average surface roughness of the specimens was determined by using Nanotech WSxM 5.0 develop 7.0 software. The FESEM results revealed the formation of bubbles, cracks and black spots on the samples' surface at different doses whereas the XRD results indicated the presence of residual stresses in the irradiated specimens. Williamson-Hall analysis of the diffraction peaks was carried out to investigate changes in crystallite size and lattice strain in the irradiated specimens. The tensile properties such as the yield stress, ultimate tensile stress and percentage elongation exhibited a decreasing trend after irradiation in general, however, an inconsistent behavior was observed in their dependence on proton dose. The changes in tensile properties of Zr were associated with the production of radiation-induced defects including bubbles, cracks, precipitates and simultaneous recovery by the thermal energy generated with the increase of irradiation dose.

Changes in optical properties of polystyrene thin films by proton beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Hwang, Sung Hyun; Jung, Jin Mook; Choi, Jae Hak [Dept. of of Polymer Science and Engineering, Chungnam National University, Daejeon (Korea, Republic of); Jung, Chan Hee; Hwang, In Tae; Shin, Jun Hwa [Research Division for Industry and Environment, Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, Jeongeup(Korea, Republic of)

2017-06-15

In this study, changes in optical properties of polystyrene (PS) thin films by proton irradiation were investigated. PS thin films were irradiated with 150 keV proton ions at fluences ranging from 1 × 10{sup 15} to 1 × 10{sup 16} ions cm{sup -2}. The chemical structures and optical properties of proton beam-irradiated PS thin films were investigated by using a FT-IR spectrometer, an UVvis spectrophotometer, a photoluminescence (PL) and a fluorescence microscope. The results of the chemical structure analysis revealed that chemical functional groups, such as OH, C=O, and C=C, were formed in the PS films due to the oxidation and formation of carbon clusters by proton beam irradiation. The PL emission was generated and gradually red-shifted with an increasing fluence due to the higher formation of sp2 carbon clusters by proton beam irradiation. The highest PL intensity was obtained at a fluence of 5×10{sup 15} ions cm{sup -2}. The optical band gap of PS calculated by using a Tauc’s plot decreased with increasing the fluence due to the formation of sp2 carbon clusters by proton beam irradiation.

Formation mechanism of SiC in C-Si system by ion irradiation

International Nuclear Information System (INIS)

Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

2003-01-01

The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

Study of Si wafer surfaces irradiated by gas cluster ion beams

International Nuclear Information System (INIS)

Isogai, H.; Toyoda, E.; Senda, T.; Izunome, K.; Kashima, K.; Toyoda, N.; Yamada, I.

2007-01-01

The surface structures of Si (1 0 0) wafers subjected to gas cluster ion beam (GCIB) irradiation have been analyzed by cross-sectional transmission electron microscopy (XTEM) and atomic force microscopy (AFM). GCIB irradiation is a promising technique for both precise surface etching and planarization of Si wafers. However, it is very important to understand the crystalline structure of Si wafers after GCIB irradiation. An Ar-GCIB used for the physically sputtering of Si atoms and a SF 6 -GCIB used for the chemical etching of the Si surface are also analyzed. The GCIB irradiation increases the surface roughness of the wafers, and amorphous Si layers are formed on the wafer surface. However, when the Si wafers are annealed in hydrogen at a high temperature after the GCIB irradiation, the surface roughness decreases to the same level as that before the irradiation. Moreover, the amorphous Si layers disappear completely

Alpha-particle irradiation induced defects in SiO2 films of Si-SiO2 structures

International Nuclear Information System (INIS)

Koman, B.P.; Gal'chynskyy, O.V.; Kovalyuk, R.O.; Shkol'nyy, A.K.

1996-01-01

The aim of the work was to investigate alpha-particle irradiation induced defects in Si-SiO 2 structures by means of the thermostimulated discharge currents (TSDC) analysis. The object of investigation were (p-Si)-SiO 2 structures formed by a combined oxidation of the industrial p-Si wafers in dry and wet oxygen at temperature of 1150 C. The TSD currents were investigated in the temperature range between 90 and 500 K under linear heating rate. Pu 238 isotopes were the source of alpha-particles with an energy of 4-5 MeV and a density of 5.10 7 s -1 cm -2 . The TSD current curves show two peculiar maxima at about 370 and 480 K. Alpha-particle irradiation doesn't affect the general shape of the TSDC curves but leads to a shift of the maximum at 370 K and reduces the total electret charge which is accumulated in the Si-SiO 2 structures during polarization. The energy distribution function of the defects which are involved in SiO 2 polarization has been calculated. It showes that defects with activation energies of about 0.8 and 1.0 eV take part in forming the electret state, and these activation energies have certain energy distributions. It has been found that the TSDC maximum at 370 K has space charge nature and is caused by migration of hydrogen ions. In irradiated samples hydrogen and natrium ions localize on deeper trapping centres induced by alpha-particle irradiation. (orig.)

Inactivation of HTB63 human melanoma cells by irradiation with protons and gamma rays.

Science.gov (United States)

Ristic-Fira, Aleksandra; Petrovic, Ivan; Todorovic, Danijela; Koricanac, Lela; Vujèic, Miroslava; Demajo, Miroslav; Sabini, Gabriella; Cirrone, Pablo; Cuttone, Giacomo

2004-12-01

The effects of single irradiation with gamma rays and protons on HTB63 human melanoma cell growth were compared. The exponentially growing cells were irradiated with gamma rays or protons using doses ranging from 2-20 Gy. At 48 h of post-irradiation incubation under standard conditions, cell survival and induction of apoptotic cell death were examined. The best effect of the single irradiation with gamma rays was the reduction of cell growth by up to 26% (p=0.048, irradiation vs. control), obtained using the dose of 16 Gy. The same doses of proton irradiation, having energy at the target of 22.6 MeV, significantly inhibited melanoma cell growth. Doses of 12 and 16 Gy of protons provoked growth inhibition of 48.9% (p=0.003, irradiation vs. control) and 51.2% (p=0.012, irradiation vs. control) respectively. Irradiation with 12 and 16 Gy protons, compared to the effects of the same doses of gamma rays, significantly reduced melanoma cell growth (p=0.015 and p=0.028, protons vs. gamma rays, respectively). Estimated RBEs for growth inhibition of HTB63 cells ranged from 1.02 to 1.45. The electrophoretical analyses of DNA samples and flow cytometric evaluation have shown a low percentage of apoptotic cells after both types of irradiation. The better inhibitory effect achieved by protons in contrast to gamma rays, can be explained considering specific physical properties of protons, especially taking into account the highly localized energy deposition (high LET).

Determination of irradiation temperature using SiC temperature monitors

International Nuclear Information System (INIS)

Maruyama, Tadashi; Onose, Shoji

1999-01-01

This paper describes a method for detecting the change in length of SiC temperature monitors and a discussion is made on the relationship between irradiation temperature and the recovery in length of SiC temperature monitors. The SiC specimens were irradiated in the experimental fast reactor JOYO' at the irradiation temperatures around 417 to 645degC (design temperature). The change in length of irradiated specimens was detected using a dilatometer with SiO 2 glass push rod in an infrared image furnace. The temperature at which recovery in macroscopic length begins was obtained from the annealing intersection temperature. The results of measurements indicated that a difference between annealing intersection temperature and the design temperature sometimes reached well over ±100degC. A calibration method to obtain accurate irradiation temperature was presented and compared with the design temperature. (author)

Surface cracking in proton-irradiated glass

International Nuclear Information System (INIS)

Jensen, T.; Lawn, B.R.; Dalglish, R.L.; Kelly, J.C.

1976-01-01

Some observations are reported of the surface fracture behaviour of soda-lime glass slabs (6mm thick Pilkington float glass) irradiated with 480 kV protons. A simple indentation microfracture technique provided a convenient means of probing the irradiated surface regions. Basically, the technique involves loading a standard Vickers diamond pyramid indenter onto the area of interest such that a well-developed deformation/fracture pattern is generated. (author)

A SAP/Al-Mg-Si composite alloy for use as a proton beam window of a high-power proton accelerator

International Nuclear Information System (INIS)

Schroeder, G.; Ribbens, A.; Fiorini, P.; Giordano, G.

1987-12-01

A composite material consisting of a sintered aluminium product (SAP) core surrounded by an Al-Mg-Si alloy rim was studied with respect to its applicability as a stationary window inside a high-power proton beam. This paper summarizes the experimental procedures and results on both the composite material and individual SAP alloys in terms of materials preparation, microstructural characterization, leak tightness, deformation and burst behaviour, sensitivity to hydrogen embrittlement, and irradiation effects after helium preimplantation. Regarding any of these items, the material either proved good or showed only minor degradation. It is thus considered as promising for uses involving high thermomechanical load inside a high-radiation environment. (orig.)

Irradiation damages in Ti3SiC2

International Nuclear Information System (INIS)

Nappe, J.C.; Grosseau, Ph.; Guilhot, B.; Audubert, F.; Beauvy, M.

2007-01-01

Carbides, by their remarkable properties, are considered as possible materials (fuel cans) in reactor of generation IV. Among those studied, Ti 3 SiC 2 is particularly considered because it joins both the ceramics and metals properties. Nevertheless, its behaviour under irradiation is not known. Characterizations have been carried out on samples irradiated at 75 MeV krypton ions. They have revealed that TiO 2 (formed at the surface of Ti 3 SiC 2 ) is pulverized by the irradiation and that the crystal lattice of Ti 3 SiC 2 dilates with c. (O.M.)

Electron irradiation-induced defects in {beta}-SiC

Energy Technology Data Exchange (ETDEWEB)

Oshima, Ryuichiro [Osaka Prefectural Univ., Sakai (Japan). Reseach Inst. for Advanced Science and Technology

1996-04-01

To add information of point defects in cubic crystal SiC, polycrystal {beta}-SiC on the market was used as sample and irradiated by neutron and electron. In situ observation of neutron and electron irradiation-induced defects in {beta}-SiC were carried out by ultra high-voltage electronic microscope (UHVEM) and ordinary electronic microscope. The obtained results show that the electron irradiation-induced secondary defects are micro defects less than 20 nm at about 1273K, the density of defects is from 2x10{sup 17} to 1x10{sup 18}/cc, the secondary defects may be hole type at high temperature and the preexistant defects control nuclear formation of irradiation-induced defects, effective sink. (S.Y.)

Ag Transport Through Non-Irradiated and Irradiated SiC

Energy Technology Data Exchange (ETDEWEB)

Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Morgan, Dane [Univ. of Wisconsin, Madison, WI (United States); Blanchard, James [Univ. of Wisconsin, Madison, WI (United States)

2016-01-11

Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

Ag Transport Through Non-Irradiated and Irradiated SiC

International Nuclear Information System (INIS)

Szlufarska, Izabela; Morgan, Dane; Blanchard, James

2016-01-01

Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

Impact of irradiations by protons with different energies on silicon sensors

International Nuclear Information System (INIS)

Neubueser, Coralie

2013-06-01

In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10 11 cm -2 and 1.5 x 10 15 cm -2 , the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of Φ eq ∼3 x 10 14 cm -2 oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

Elemental process of amorphization induced by electron irradiation in Si

International Nuclear Information System (INIS)

Yamasaki, Jun; Takeda, Seiji; Tsuda, Kenji

2002-01-01

We recently found that amorphization is induced in Si by electron irradiation. Examining the amorphization systematically, we have established the diagram of steady states under electron irradiation, either amorphous Si (a-Si) or crystalline Si (c-Si) as a function of incident electron energy, electron dose, and irradiation temperature. Utilizing transmission electron microscopy, electron energy filtered diffraction and electron energy-loss spectroscopy, we have characterized the atomic structure, the electronic structure, and the thermal stability of a-Si induced by electron irradiation. Based on the experimental data, we have also concluded that the amorphization is caused by the accumulation of not point defects but small cascade damages. Analyzing the change in the intensity of halo diffraction rings during amorphization, we have clarified that the smallest cascade damage that contributes to amorphization includes only about four Si atoms. This presumably supports the amorphization mechanism that four self-interstitial atoms form the quasistable structure I4 in c-Si and it becomes an amorphous embryo

Electron dosimetry in irradiation processing with rad-hard diodes; Dosimetria de eletrons em processos de irradiacao com diodos resistentes a danos de radiacao

Energy Technology Data Exchange (ETDEWEB)

Santos, Thais Cavalheri dos

2012-07-01

This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar Registered-Sign window and LEMO Registered-Sign connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for

Effect of simultaneous ion irradiation on microstructural change of SiC/SiC composites at high temperature

International Nuclear Information System (INIS)

Taguchi, T.; Wakai, E.; Igawa, N.; Nogami, S.; Snead, L.L.; Hasegawa, A.; Jitsukawa, S.

2002-01-01

The effect of simultaneous triple ion irradiation of He, H and Si on microstructural evolution of two kinds of SiC/SiC composites (HNS composite (using Hi-Nicalon type S SiC fiber) and TSA composite (using Tyranno SA SiC fiber)) at 1000 deg. C has been investigated. The microstructure observations of SiC/SiC composites irradiated to 10 dpa were examined by transmission electron microscopy. He bubbles were hardly formed in matrix of TSA composite, but many helium bubbles and some cracks were observed at grain boundaries of matrix of HNS composite. He bubbles and cracks were not, on the other hand, observed in the both fiber fabrics of HNS and TSA composites. Debonding between fiber and carbon layer following irradiation region was not observed in the both composites. Under these irradiation conditions, TSA composite showed the better microstructural stability against ion beams irradiation than one of HNS composite

Near-surface segregation in irradiated Ni3Si

International Nuclear Information System (INIS)

Wagner, W.; Rehn, L.E.; Wiedersich, H.

1982-01-01

The radiation-induced growth of Ni 3 Si films on the surfaces of Ni(Si) alloys containing = 3 Si phase has been observed. Post-irradiation depth profiling by Auger electron spectroscopy, as well as in situ analysis by high-resolution Rutherford backscattering spectrometry, reveals Si-enrichment at the surfaces of Ni(Si) alloys in excess of stoichiometric Ni 3 Si during irradiation. Thin, near-surface layers with silicon concentrations of 28 to 30 at.% are observed, and even higher Si enrichment is found in the first few atom layers. Transmission electron microscopy and selected area-electron diffraction were employed to characterize these Si-enriched layers. A complex, multiple-spot diffraction pattern is observed superposed on the diffraction pattern of ordered Ni 3 Si. The d-spacings obtained from the extra spots are consistent with those of the orthohexagonal intermetallic compound Ni 5 Si 2 . (author)

Effect of proton irradiation on photoluminescent properties of PDMS-nanodiamond composites

International Nuclear Information System (INIS)

Borjanovic, Vesna; Hens, Suzanne; Shenderova, Olga; McGuire, Gary E; Lawrence, William G; Edson, Clark; Jaksic, Milko; Zamboni, Ivana; Vlasov, Igor

2008-01-01

Pure poly(dimethylsiloxane) (PDMS) films, PDMS-nanodiamond (ND) and pure nanodiamond powder were irradiated with 2 MeV protons under a variety of fluence and current conditions. Upon proton irradiation, these samples acquire a fluence-dependent photoluminescence (PL). The emission and excitation spectra, photostability and emission lifetime of the induced photoluminescence of PDMS and PDMS-ND samples are reported. Pure PDMS exhibits a noticeable stable blue PL, while the PDMS-ND composites exhibit a pronounced stable green PL under 425 nm excitation. The PL of PDMS-ND composites is much more prominent than that of pure PDMS or pure ND powder even when irradiated at higher doses. The origin of the significantly enhanced PL intensity for the proton-irradiated PDMS-ND composite is explained by the combination of enhanced intrinsic PL within ND particles due to ion-implantation-generated defects and by PL originating from structural transformations produced by protons at the nanodiamond/matrix interface.

Photoluminescence study of high energy proton irradiation on Cu(In,Ga)Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Koo, Bonhyeong [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Lee, June Hyuk [Neutron Science Division, Korea Atomic Energy Research Institute (KAERI), 989-111 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Shin, Donghyeop [Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708 (United States); Ahn, Byung Tae, E-mail: btahn@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Shin, Byungha, E-mail: byungha@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

2016-03-31

We have studied the effect of proton irradiation on Cu(In,Ga)Se{sub 2} (CIGS) thin films using photoluminescence (PL). We used a 10 MeV proton beam with varying doses from 10{sup 9} to 10{sup 12} cm{sup −2}. Intensity-dependent low temperature PL measurements suggest that the proton irradiation does not create a new defect level but instead changes the number of preexisting defects in the detection range of the PL system. By comparing PL spectra after the proton irradiation with those obtained after thermal annealing under inert gas as well as under hydrogen gas ambient, we find that the irradiation-induced change in the defect structure does not originate from the incorporation of hydrogen but from energetics of the irradiating particles. Electrical resistivity of the proton irradiated CIGS thin films is shown to decrease after the proton irradiation, and this is explained by the reduction of the concentration of compensating donor-like defects, specifically selenium vacancies, based on the PL results. - Highlights: • Photoluminescence study of 10 MeV proton irradiation on CIGS at 10 K. • Irradiation modified population of existing defects without introducing new levels. • Changes in CIGS by 10 MeV irradiation are due to energetics of irradiating protons.

Precipitation in Ni-Si during electron and ion irradiation

Science.gov (United States)

Lucas, G. E.; Zama, T.; Ishino, S.

1986-11-01

This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2 × 10 -5dpa/s to 2 × 10 -3dpa/s at temperatures in the range 25°C to 450°C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2 × 10 -3dpa/s was ˜125°C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325°C. This suggests that cascade disordering competes with radiation induced solute segregation.

Precipitation in Ni-Si during electron and ion irradiation

International Nuclear Information System (INIS)

Lucas, G.E.; Zama, T.; Ishino, S.

1986-01-01

This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2x10 -5 dpa/s to 2x10 -3 dpa/s at temperatures in the range 25 0 C to 450 0 C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3 Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3 Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2x10 -3 dpa/s was ∝125 0 C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325 0 C. This suggests that cascade disordering competes with radiation induced solute segregation. (orig.)

Impact of irradiations by protons with different energies on silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Neubueser, Coralie

2013-06-15

In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10{sup 11} cm{sup -2} and 1.5 x 10{sup 15} cm{sup -2}, the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of {Phi}{sub eq}{approx}3 x 10{sup 14} cm{sup -2} oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

Proton production from Si+Au collisions at 14.5 A/center dot/GeV

International Nuclear Information System (INIS)

Sarabura, M.; Abbott, T.; Akiba, Y.

1988-01-01

Recent results are presented from the study of central Si+Au → p+X, Si+Au → π/sup +-/+X, and Si+Cu → p+X at 14.5 A/center dot/GeV. The distribution of protons in rapidity indicates that many target protons are found above 0.5 units. The variation of the slope parameter in rapidity is consistent with a thermal source of protons at the geometric center-of-mass rapidity. 4 refs., 4 figs

Vacancy-type defects in electron and proton irradiated II-VI compounds

International Nuclear Information System (INIS)

Brunner, S.; Puff, W.; Balogh, A.G.; Baumann, H.

1997-01-01

In this contribution, the authors present a study aimed at investigating the basic properties of radiation induced defects in ZnS and ZnO and the influence of the atmosphere on the annealing characteristics of the defects. Positron annihilation experiments (both lifetime and Doppler-broadening measurements) were performed on both single- and polycrystalline samples, irradiated with 3 MeV protons or 1 MeV electrons. For ZnS it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics. The annealing of proton irradiated ZnS in air leads to significant oxidation and eventual transformation into ZnO

Modification of polycrystalline copper by proton irradiation; Modificacion de cobre policristalino por irradiacion con protones

Energy Technology Data Exchange (ETDEWEB)

Garcia S, F.; Cabral P, A. [Instituto Nacional de Investigaciones Nucleares, Hipodromo Condesa, 06100 Mexico D.F. (Mexico); Saniger B, J.M.; Banuelos, J.G. [UNAM Centro de Instrumentos, Mexico D.F. (Mexico); Barragan V, A. [UNAM Instituto de Fisica, Mexico D.F. (Mexico)

1997-07-01

Polished copper samples were irradiated with proton beams of 300 and 700 keV at room temperature and at -150 Centigrade. In this work the obtained results are reported when such copper irradiated samples are analysed with Sem, Tem, AFM. The Sem micrographs showed evident changes in surface of these copper samples, therefore an EDAX microanalysis was done for its characterization. additionally, the Tem micrographs showed heaps formation until 200 nm. Its electron diffraction spectra indicated that these heaps consist of a copper compound. Finally with AFM were observed changes in coloration of the irradiated sample surface, as well as changes in texture and rugosity of them. These results show in general that irradiation process with protons which is known as an innocuo process produces changes in the copper properties. (Author)

Positron Annihilation Study of Ion-irradiated Si

International Nuclear Information System (INIS)

Shin, Jung Ki; Kwon, Jun Hyun; Lee, Jong Yong

2009-01-01

Structural parts like a spaceship, satellite and solar cell are composed of metal alloy or semiconductor materials. Especially, Si is used as a primary candidate alloy. But, manned and robotic missions to the Earth's moon and Mars are exposed to a continuous flux of Galactic Cosmic Rays (GCR) and occasional, but intense, fluxes of Solar Energetic Particles. These natural radiations impose hazards to manned exploration. Irradiation of cosmic particle induces various changes in the mechanical and physical properties of device steels. It is, therefore, important to investigate radiation damage to the component materials in semiconductor. The evolution of radiation-induced defects leads to degradation of the mechanical properties. One of them includes irradiation embrittlement, which can cause a loss of ductility and further increase the probability of a brittle fracture. It can be more dangerous in the space. Positron annihilation lifetime spectroscopy(PALS) have been applied to investigate the production of vacancy-type defects for Ion-irradiated Si wafer penetrated by H, He, O and Fe ions. Then, we carried out a comparison with an un-irradiated Si wafer

Proton irradiated graphite grades for a long baseline neutrino facility experiment

International Nuclear Information System (INIS)

Simos, N.; Nocera, P.; Zwaska, R.; Mokhov, N.

2017-01-01

In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF) of the Deep Underground Neutrino Experiment (DUNE) four graphite grades were irradiated with protons in the energy range of 140–180 MeV, to peak fluence of ~6.1×10"2"0 p/cm"2 and irradiation temperatures between 120–200 °C. The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a) comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use as a pion target and (b) understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young’s modulus. The proton fluence level of ~10"2"0 cm"-"2 where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite revealed for the first time the similarity in

Proton irradiated graphite grades for a long baseline neutrino facility experiment

Directory of Open Access Journals (Sweden)

N. Simos

2017-07-01

Full Text Available In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF of the Deep Underground Neutrino Experiment (DUNE four graphite grades were irradiated with protons in the energy range of 140–180 MeV, to peak fluence of ∼6.1×10^{20}  p/cm^{2} and irradiation temperatures between 120–200 °C. The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use as a pion target and (b understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young’s modulus. The proton fluence level of ∼10^{20}  cm^{−2} where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite

Proton irradiated graphite grades for a long baseline neutrino facility experiment

Science.gov (United States)

Simos, N.; Nocera, P.; Zhong, Z.; Zwaska, R.; Mokhov, N.; Misek, J.; Ammigan, K.; Hurh, P.; Kotsina, Z.

2017-07-01

In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF) of the Deep Underground Neutrino Experiment (DUNE) four graphite grades were irradiated with protons in the energy range of 140-180 MeV, to peak fluence of ˜6.1 ×1020 p /cm2 and irradiation temperatures between 120 - 200 °C . The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a) comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use as a pion target and (b) understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young's modulus. The proton fluence level of ˜1020 cm-2 where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite revealed for the first time the similarity in

Structural changes and tribological performance of thermosetting polyimide induced by proton and electron irradiation

International Nuclear Information System (INIS)

Lv, Mei; Wang, Yanming; Wang, Qihua; Wang, Tingmei; Liang, Yongmin

2015-01-01

The structural changes and tribological performance of thermosetting polyimide were investigated by electron, proton or both combined irradiations at 25 keV in a ground-based simulation facility. Three forms of irradiations could lead to the formation of the carbonized layer on the polymer surface that could increase the hardness and adhesive force of the material. Proton irradiation induced more extensive changes in structure and friction behavior than electron irradiation by reason of the higher linear energy transfer value, and combined irradiation resulted in the largest impact, but which was less than the sum of the radiation effects of electron and proton. Moreover, the experimental results indicated that the changes in friction behavior are closely related with the carbonized layer, which was easily worn out in friction process and could introduce a shift from adhesion wear to three-body abrasive wear that reduced the wear rate and the friction coefficient. The friction process of irradiated samples could be divided into the initial stage and the steady stage. Three forms of irradiations all induced the high friction coefficient in the initial stage and the low friction coefficient in the steady stage, and the wear rate of the irradiated samples decreased in the order: electron irradiation>proton irradiation>combined irradiation. - Highlights: • Proton irradiation induced more extensive changes in structure and friction behavior than electron irradiation. • The effect of combined irradiation was less than that of the sum of electron and proton irradiation. • Three forms of irradiations all induced the high initial friction coefficient and the low steady-stage friction coefficient. • The initial friction stage means a fast-wearing adhesive process while the steady-state of the system is a three-body abrasion

Investigation of microstructure and mechanical properties of proton irradiated Zircaloy 2

Energy Technology Data Exchange (ETDEWEB)

Sarkar, Apu, E-mail: asarkar@barc.gov.in [Mechanical Metallurgy Division, Bhabha Atomic Reserch Centre, Mumbai, 400 085 (India); Kumar, Ajay [Nuclear Physics Division, Bhabha Atomic Reserch Centre, Mumbai, 400 085 (India); Mukherjee, S.; Sharma, S.K.; Dutta, D.; Pujari, P.K. [Radiochemistry Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Agarwal, A.; Gupta, S.K.; Singh, P. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Chakravartty, J.K. [Mechanical Metallurgy Division, Bhabha Atomic Reserch Centre, Mumbai, 400 085 (India)

2016-10-15

Samples of Zircaloy 2 have been irradiated with 4 MeV protons to two different doses. Microstructures of the unirradiated and irradiated samples have been characterized by Electron Back Scatter Diffraction (EBSD), X-ray diffraction line profile analysis (XRDLPA), Positron Annihilation Lifetime Spectroscopy (PALS) and Coincident Doppler Broadening (CDB) Spectroscopy. Tensile tests and micro hardness measurements have been carried out at room temperature to assess the changes in mechanical properties of Zircaloy 2 due to proton irradiation. The correlation of dislocation density, grain size and yield stress of the irradiated samples indicated that an increase in dislocation density due to irradiation is responsible for the change in mechanical behavior of irradiated Zircaloy.

Impact of proton irradiation on deep level states in n-GaN

International Nuclear Information System (INIS)

Zhang, Z.; Arehart, A. R.; Cinkilic, E.; Ringel, S. A.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Speck, J. S.

2013-01-01

Deep levels in 1.8 MeV proton irradiated n-type GaN were systematically characterized using deep level transient spectroscopies and deep level optical spectroscopies. The impacts of proton irradiation on the introduction and evolution of those deep states were revealed as a function of proton fluences up to 1.1 × 10 13 cm −2 . The proton irradiation introduced two traps with activation energies of E C - 0.13 eV and 0.16 eV, and a monotonic increase in the concentration for most of the pre-existing traps, though the increase rates were different for each trap, suggesting different physical sources and/or configurations for these states. Through lighted capacitance voltage measurements, the deep levels at E C - 1.25 eV, 2.50 eV, and 3.25 eV were identified as being the source of systematic carrier removal in proton-damaged n-GaN as a function of proton fluence

Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons

Energy Technology Data Exchange (ETDEWEB)

Kozlovski, V.V. [St. Petersburg State Polytechnic University, St. Petersburg 195251 (Russian Federation); Lebedev, A.A., E-mail: shura.lebe@mail.ioffe.ru [Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg 197101 (Russian Federation); Emtsev, V.V.; Oganesyan, G.A. [Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)

2016-10-01

Processes of radiation defect formation and conductivity compensation in silicon and silicon carbide irradiated with 0.9 MeV electrons are considered in comparison with the electron irradiation at higher energies. The experimental values of the carrier removal rate at the electron energy of 0.9 MeV are nearly an order of magnitude smaller than the similar values of the parameter for higher energy electrons (6–9 MeV). At the same time, the formation cross-section of primary radiation defects (Frenkel pairs, FPs) is nearly energy-independent in this range. It is assumed that these differences are due to the influence exerted by the energy of primary knocked-on atoms (PKAs). As the PKA energy increases, the average distance between the genetically related FPs grows and, as a consequence, the fraction of FPs unrecombined under irradiation becomes larger. The FP recombination radius is estimated (∼1.1 nm), which makes it possible to ascertain the charge state of the recombining components. Second, the increase in the PKA energy enables formation of new, more complex secondary radiation defects. At electron energies exceeding 15 MeV, the average PKA energies are closer to the values obtained under irradiation with 1 MeV protons, compared with an electron irradiation at the same energy. As for the radiation-induced defect formation, the irradiation of silicon with MeV protons can be, in principle, regarded as a superposition of the irradiation with 1 MeV electrons and that with silicon ions having energy of ∼1 keV, with the “source” of silicon ions generating these ions uniformly across the sample thickness.

Irradiation damages in Ti{sub 3}SiC{sub 2}; Dommages d'irradiation dans Ti{sub 3}SiC{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Nappe, J.C.; Grosseau, Ph. [Ecole Nationale Superieure des Mines, Centre SPIN, Lab. PMMC et LPMG UMR CNRS 5148, 42 - Saint-Etienne (France); Guilhot, B. [Ecole Nationale Superieure des Mines, Centre CIS, 42 - Saint-Etienne (France); Audubert, F.; Beauvy, M. [CEA Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. d' Etudes des Combustibles; Iacconi, Ph.; Benabdesselam, M. [Nice Univ. - Sophia Antipolis, Lab. LPES-CRESA, 06 (France)

2007-07-01

Carbides, by their remarkable properties, are considered as possible materials (fuel cans) in reactor of generation IV. Among those studied, Ti{sub 3}SiC{sub 2} is particularly considered because it joins both the ceramics and metals properties. Nevertheless, its behaviour under irradiation is not known. Characterizations have been carried out on samples irradiated at 75 MeV krypton ions. They have revealed that TiO{sub 2} (formed at the surface of Ti{sub 3}SiC{sub 2}) is pulverized by the irradiation and that the crystal lattice of Ti{sub 3}SiC{sub 2} dilates with c. (O.M.)

The performance of the anthraquinone/p-Si and the pyridine/p-Si rectifying device under X-ray irradiation

International Nuclear Information System (INIS)

Şahin, Yılmaz; Aydoğan, Şakir; Ekinci, Duygu; Turut, Abdulmecit

2016-01-01

Some X-ray irradiation-induced electrical characteristics of the Au/anthraquinone/p-Si and the Au/pyridine/p-Si junction devices have been investigated. The experimental ideality factors increased for both devices with increasing irradiation dose from 25 Gy to 150 Gy. These values ranged from 1.10 to 1.52 for Au/anthraquinone/p-Si and from 1.46 to 1.77 for Au/pyridine/p-Si, respectively. Furthermore, the barrier height of Au/anthraquinone/p-Si increased with increasing irradiation dose from 0.75 to 0.91 eV, whereas it displayed about a constant value for Au/pyridine/p-Si. In addition, the series resistance of both devices increased with x-ray dose too. The increase in the series resistance with x-ray irradiation has been attributed to the decrease in the active dopant densities. It was seen that the ionization damage is effective on most of the junction characteristics. The leakage current of the Au/anthraquinone/p-Si device decreased with x-ray irradiation since the irradiation induced the formation of electron-hole pairs and hydroquinone structure, and thus some of them are trapped by the interface states. The degradation of the I-V curves of Au/pyridine/p-Si/Al device is attributed to the variation of the surface or interface states distribution for the devices. The reverse and forward bias currents relatively increased after x-ray irradiation because of the decrease in bulk lifetime. In addition, ATR-FTIR spectra of anthraquinone and pyridine films showed that pyridine is more stable than anthraquinone under x-ray irradiation. - Highlights: • Two junction devices based on organic materials were fabricated. • The effect of the x-ray irradiation on devices were examined. • Both devices showed x-irradiation-dependence.

The performance of the anthraquinone/p-Si and the pyridine/p-Si rectifying device under X-ray irradiation

Energy Technology Data Exchange (ETDEWEB)

Şahin, Yılmaz [Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum (Turkey); Aydoğan, Şakir, E-mail: saydogan@atauni.edu.tr [Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum (Turkey); Ekinci, Duygu [Department of Chemistry, Faculty of Sciences, University of Atatürk, 25240 Erzurum (Turkey); Turut, Abdulmecit [Department of Engineering Physics, Faculty of Sciences, Istanbul Medeniyet University (Turkey)

2016-11-01

Some X-ray irradiation-induced electrical characteristics of the Au/anthraquinone/p-Si and the Au/pyridine/p-Si junction devices have been investigated. The experimental ideality factors increased for both devices with increasing irradiation dose from 25 Gy to 150 Gy. These values ranged from 1.10 to 1.52 for Au/anthraquinone/p-Si and from 1.46 to 1.77 for Au/pyridine/p-Si, respectively. Furthermore, the barrier height of Au/anthraquinone/p-Si increased with increasing irradiation dose from 0.75 to 0.91 eV, whereas it displayed about a constant value for Au/pyridine/p-Si. In addition, the series resistance of both devices increased with x-ray dose too. The increase in the series resistance with x-ray irradiation has been attributed to the decrease in the active dopant densities. It was seen that the ionization damage is effective on most of the junction characteristics. The leakage current of the Au/anthraquinone/p-Si device decreased with x-ray irradiation since the irradiation induced the formation of electron-hole pairs and hydroquinone structure, and thus some of them are trapped by the interface states. The degradation of the I-V curves of Au/pyridine/p-Si/Al device is attributed to the variation of the surface or interface states distribution for the devices. The reverse and forward bias currents relatively increased after x-ray irradiation because of the decrease in bulk lifetime. In addition, ATR-FTIR spectra of anthraquinone and pyridine films showed that pyridine is more stable than anthraquinone under x-ray irradiation. - Highlights: • Two junction devices based on organic materials were fabricated. • The effect of the x-ray irradiation on devices were examined. • Both devices showed x-irradiation-dependence.

Magnetic properties of point defects in proton irradiated diamond

Energy Technology Data Exchange (ETDEWEB)

Makgato, T.N., E-mail: Thuto.Makgato@students.wits.ac.za [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Sideras-Haddad, E. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Center of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa); Ramos, M.A. [CMAM, Centro de Micro-Analisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, Campus de Cantoblanco, E-28049 Madrid (Spain); Departamento de Fisica de la Materia Condensada, Condensed Matter Physics Center (IFIMAC) and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, 28049 Madrid (Spain); García-Hernández, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid (Spain); Climent-Font, A.; Zucchiatti, A.; Muñoz-Martin, A. [CMAM, Centro de Micro-Analisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, Campus de Cantoblanco, E-28049 Madrid (Spain); Shrivastava, S. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Erasmus, R. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Center of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa)

2016-09-01

We investigate the magnetic properties of ultra-pure type-IIa diamond following irradiation with proton beams of ≈1–2 MeV energy. SQUID magnetometry indicate the formation of Curie type paramagnetism according to the Curie law. Raman and Photoluminescence spectroscopy measurements show that the primary structural features created by proton irradiation are the centers: GR1, ND1, TR12 and 3H. The Stopping and Range of Ions in Matter (SRIM) Monte Carlo simulations together with SQUID observations show a strong correlation between vacancy production, proton fluence and the paramagnetic factor. At an average surface vacancy spacing of ≈1–1.6 nm and bulk (peak) vacancy spacing of ≈0.3-0.5 nm Curie paramagnetism is induced by formation of ND1 centres with an effective magnetic moment μ{sub eff}~(0.1–0.2)μ{sub B}. No evidence of long range magnetic ordering is observed in the temperature range 4.2-300 K. - Highlights: • Proton macro-irradiation of pure diamond creates fluence dependent paramagnetism. • The effective magnetic moment is found to be in the range μ{sub eff}~(0.1–0.2)μ{sub B}. • No evidence of long range magnetic ordering is observed.

Magnetic properties of point defects in proton irradiated diamond

International Nuclear Information System (INIS)

Makgato, T.N.; Sideras-Haddad, E.; Ramos, M.A.; García-Hernández, M.; Climent-Font, A.; Zucchiatti, A.; Muñoz-Martin, A.; Shrivastava, S.; Erasmus, R.

2016-01-01

We investigate the magnetic properties of ultra-pure type-IIa diamond following irradiation with proton beams of ≈1–2 MeV energy. SQUID magnetometry indicate the formation of Curie type paramagnetism according to the Curie law. Raman and Photoluminescence spectroscopy measurements show that the primary structural features created by proton irradiation are the centers: GR1, ND1, TR12 and 3H. The Stopping and Range of Ions in Matter (SRIM) Monte Carlo simulations together with SQUID observations show a strong correlation between vacancy production, proton fluence and the paramagnetic factor. At an average surface vacancy spacing of ≈1–1.6 nm and bulk (peak) vacancy spacing of ≈0.3-0.5 nm Curie paramagnetism is induced by formation of ND1 centres with an effective magnetic moment μ eff ~(0.1–0.2)μ B . No evidence of long range magnetic ordering is observed in the temperature range 4.2-300 K. - Highlights: • Proton macro-irradiation of pure diamond creates fluence dependent paramagnetism. • The effective magnetic moment is found to be in the range μ eff ~(0.1–0.2)μ B . • No evidence of long range magnetic ordering is observed.

Effect of 200 keV proton irradiation on the properties of methyl silicone rubber

International Nuclear Information System (INIS)

Zhang Lixin; Xu Zhou; Wei Qiang; He Shiyu

2006-01-01

The effects of 200 keV proton irradiation on methyl silicone rubber were studied. The changes in surface morphology, mechanical properties, cross-linking density, glass transition temperature, infrared attenuated total reflection spectrum and mass spectrum indicated that, at lower fluence, the proton irradiation induced cross-linking, resulting in an increase in tensile strength and hardness of the methyl silicone rubber. However, at higher proton fluence, radiation-induced degradation, which decreased the tensile strength and hardness, became dominant. A macromolecular-network destruction model for silicone rubber irradiated with protons was proposed

Effects of proton irradiation on electronic structure of NdFeB permanent magnets

Energy Technology Data Exchange (ETDEWEB)

Yang, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhen, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)], E-mail: lzhen@hit.edu.cn; Xu, C.Y.; Sun, X.Y.; Shao, W.Z. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2009-09-15

Effects of proton irradiation on electronic structure and atomic local structure of N35EH-type NdFeB permanent magnet were investigated by soft X-ray absorption spectrometry and Moessbauer spectrometry. The local coordination environment of Fe atoms changes after proton irradiation, and the average hyperfine field H{sub in} of the magnets decreases from 288.4 to 286.9 kOe. The effects of irradiation on Fe atoms local environment at different lattice sites are different. The near edge structure of Fe L{sub 3} edge is changed, indicating the density of unoccupied state of Fe 3d electrons increases after proton irradiation.

380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

International Nuclear Information System (INIS)

Okada, Hiroshi; Nakanishi, Yasuo; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi

2008-01-01

The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1x10 13 cm -2 , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5 D 0 → 7 F 2 transition in Eu 3+ kept the initial PL intensity after the proton irradiation up to 1x10 14 cm -2 . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment

Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

Science.gov (United States)

Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

2016-08-24

Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

HTB140 melanoma cells under proton irradiation and/or alkylating agents

Science.gov (United States)

Korićanac, L.; Petrović, I.; Privitera, G.; Cuttone, G.; Ristić-Fira, A.

2007-09-01

Chemoresistance is a major problem in the treatment of malignant melanoma. The mainstay of treatment for melanoma is the DNA-alkylating agent dacarbazine (DTIC). Fotemustine (FM), a member of the chloroethylnitrosourea group of alkylating agents, has also demonstrated significant antitumor effects in malignant melanoma. However, the intrinsic and acquired resistance of melanoma limits the clinical application of these drugs. Melanomas are also extremely radioresistant. With the objective of enhancing growth inhibition of melanoma cells, combined treatments of FM or DTIC with proton irradiation have been investigated. These effects were studied on HTB140 melanoma cell viability and proliferation. Cells exposed to treatment with FM and protons have shown inhibition of cell growth and significant reduction of proliferation capacity compared to single irradiation or drug treatment. Treatment with DTIC and protons has shown improved growth inhibition compared to appropriate single drug treatment, while the effects of single proton irradiation have been the most pronounced.

Anomalous effects in silicon solar cell irradiated by 1-MeV protons

Science.gov (United States)

Kachare, R.; Anspaugh, B. E.

1989-01-01

Several silicon solar cells having thicknesses of approximately 63 microns, with and without back-surface fields (BSF), were irradiated with 1-MeV protons having fluences between 10 to the 10th and 10 to the 12th sq cm. The irradiations were performed using both normal and isotropic incidence on the rear surfaces of the cells. It was observed that after irradiation with fluences greater than 10 to the 11th protons/sq cm, all BSF cells degraded at a faster rate than cells without BSF. The irradiation results are analyzed using a model in which irradiation-induced defects in the BSF region are taken into account. Tentatively, it is concluded that an increase in defect density due to the formation of aluminum and proton complexes in BSF cells is responsible for the higher-power loss in the BSF cells compared to the non-BSF cells.

Decoration of dislocations by proton irradiation of halite

International Nuclear Information System (INIS)

Bird, J.R.; Rose, A.; Wilkins, R.W.T.

1981-01-01

Proton irradiation of halite (NaCl) at temperatures in the range 150-220 0 C produces a variety of colours from yellow/brown through blue to violet/red. Under suitable conditions, colour bands are formed which decorate dislocations and colour other crystal features. One beam line of the Lucas Heights 3 MV Van de Graaff accelerator has been adapted to permit the measurement of optical absorption spectra during proton irradiation of heated crystals. The results show that colour centre formation is a more complex process than has been previously reported, even for synthetic NaCl crystals. The dependence of absorption at various wavelengths on dose, dose rate, temperature, strain and exposure to light is being used to study the different quasi-equilibrium concentrations of colour centres involved in the decoration process. Proton induced X-ray measurements provide information on the presence of impurities which can have an important influence on colour centre formation. (orig.)

PIE of nuclear grade SiC/SiC flexural coupons irradiated to 10 dpa at LWR temperature

Energy Technology Data Exchange (ETDEWEB)

Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-03-01

Silicon carbide fiber-reinforced SiC matrix (SiC/SiC) composites are being actively investigated for accident-tolerant core structures of light water reactors (LWRs). Owing to the limited number of irradiation studies previously conducted at LWR-coolant temperature, this study examined SiC/SiC composites following neutron irradiation at 230–340°C to 2.0 and 11.8 dpa in the High Flux Isotope Reactor. The investigated materials are chemical vapor infiltrated (CVI) SiC/SiC composites with three different reinforcement fibers. The fiber materials were monolayer pyrolytic carbon (PyC)-coated Hi-NicalonTM Type-S (HNS), TyrannoTM SA3 (SA3), and SCS-Ultra^TM (SCS) SiC fibers. The irradiation resistance of these composites was investigated based on flexural behavior, dynamic Young’s modulus, swelling, and microstructures. There was no notable mechanical properties degradation of the irradiated HNS and SA3 SiC/SiC composites except for reduction of the Young’s moduli by up to 18%. The microstructural stability of these composites supported the absence of degradation. In addition, no progressive swelling from 2.0 to 11.8 dpa was confirmed for these composites. On the other hand, the SCS composite showed significant mechanical degradation associated with cracking within the fiber. This study determined that SiC/SiC composites with HNS or SA3 SiC/SiC fibers, a PyC interphase, and a CVI SiC matrix retain their properties beyond the lifetime dose for LWR fuel cladding at the relevant temperature.

Effects of sintering additives on the microstructural and mechanical properties of the ion-irradiated SiCf/SiC

Science.gov (United States)

Fitriani, Pipit; Sharma, Amit Siddharth; Yoon, Dang-Hyok

2018-05-01

SiCf/SiC composites containing three different types of sintering additives viz. Sc-nitrate, Al2O3-Sc2O3, and Al2O3-Y2O3, were subjected to ion irradiation using 0.2 MeV H+ ions with a fluence of 3 × 1020 ions/m2 at room temperature. Although all composites showed volumetric swelling upon ion irradiation, SiCf/SiC with Sc-nitrate showed the smallest change followed by those with the Al2O3-Sc2O3 and Al2O3-Y2O3 additives. In particular, SiCf/SiC containing the conventional Al2O3-Y2O3 additive revealed significant microstructural changes, such as surface roughening and the formation of cracks and voids, resulting in reduced fiber pullout upon irradiation. On the other hand, the SiCf/SiC with Sc-nitrate showed the highest resistance against ion irradiation without showing any macroscopic changes in surface morphology and mechanical strength, indicating the importance of the sintering additive in NITE-based SiCf/SiC for nuclear structural applications.

Pre-irradiation tests on U-Si alloys

International Nuclear Information System (INIS)

Howe, L.M.; Bell, L.G.

1958-05-01

Pre-irradiation tests of hardness, density, electrical resistivity, and corrosion resistance as well as metallographic and X-ray examinations were undertaken on U-Si core material, which had been co-extruded in Zr--2, in order that the effect of irradiation on alloys in the epsilon range could be assessed. In addition, a study of the epsilonization of arc-melted material was undertaken in order to rain familiarity with the epsilonization process and to obtain information on the corrosion behaviour of epsilonized material. Sheathed U-Si samples in the epsilonized and de-epsilonized conditions have been irradiated in the X-2 loop, with a water temperature of 275 o C. The samples have been examined after 250 MWD/Tonne and show no dimensional change. (author)

The annealing effects on irradiated SiC piezo resistive pressure sensor

International Nuclear Information System (INIS)

Almaz, E.; Blue, T. E.; Zhang, P.

2009-01-01

The effects of temperature on annealing of Silicon Carbide (SiC) piezo resistive pressure sensor which was broken after high fluence neutron irradiation, were investigated. Previously, SiC piezo resistive sensor irradiated with gamma ray and fast neutron in the Co-60 gamma-ray irradiator and Beam Port 1 (BP1) and Auxiliary Irradiation Facility (AIF) at the Ohio State University Nuclear Reactor Laboratory (OSUNRL) respectively. The Annealing temperatures were tested up to 400 C. The Pressure-Output voltage results showed recovery after annealing process on SiC piezo resistive pressure sensor. The bridge resistances of the SiC pressure sensor stayed at the same level up to 300 C. After 400 C annealing, the resistance values changed dramatically.

The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

Science.gov (United States)

Lok, R.; Kaya, S.; Karacali, H.; Yilmaz, E.

2017-12-01

In this work, the initial interface trap density (Nit) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the Nit was calculated as 9.91 × 1011 cm-2 which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.

Effects of fotemustine or dacarbasine on a melanoma cell line pretreated with therapeutic proton irradiation

Directory of Open Access Journals (Sweden)

Privitera Giuseppe

2009-04-01

Full Text Available Abstract Background Considering that HTB140 melanoma cells have shown a poor response to either protons or alkylating agents, the effects of a combined use of these agents have been analysed. Methods Cells were irradiated in the middle of the therapeutic 62 MeV proton spread out Bragg peak (SOBP. Irradiation doses were 12 or 16 Gy and are those frequently used in proton therapy. Four days after irradiation cells were treated with fotemustine (FM or dacarbazine (DTIC. Drug concentrations were 100 and 250 μM, values close to those that produce 50% of growth inhibition. Cell viability, proliferation, survival and cell cycle distribution were assessed 7 days after irradiation that corresponds to more than six doubling times of HTB140 cells. In this way incubation periods providing the best single effects of drugs (3 days and protons (7 days coincided at the same time. Results Single proton irradiations have reduced the number of cells to ~50%. FM caused stronger cell inactivation due to its high toxicity, while the effectiveness of DTIC, that was important at short term, almost vanished with the incubation of 7 days. Cellular mechanisms triggered by proton irradiation differently influenced the final effects of combined treatments. Combination of protons and FM did not improve cell inactivation level achieved by single treatments. A low efficiency of the single DTIC treatment was overcome when DTIC was introduced following proton irradiation, giving better inhibitory effects with respect to the single treatments. Most of the analysed cells were in G1/S phase, viable, active and able to replicate DNA. Conclusion The obtained results are the consequence of a high resistance of HTB140 melanoma cells to protons and/or drugs. The inactivation level of the HTB140 human melanoma cells after protons, FM or DTIC treatments was not enhanced by their combined application.

ASTRO-H CdTe detectors proton irradiation at PIF

International Nuclear Information System (INIS)

Limousin, O.; Renaud, D.; Horeau, B.; Dubos, S.; Laurent, P.; Lebrun, F.; Chipaux, R.; Boatella Polo, C.; Marcinkowski, R.; Kawaharada, M.; Watanabe, S.; Ohta, M.; Sato, G.; Takahashi, T.

2015-01-01

Asbstract: The French Atomic Energy Commission (CEA), with the support of the European Space Agency (ESA), is partner of the Soft Gamma-Ray Detector (SGD) and the Hard X-ray Imager (HXI) onboard the 6th Japanese X-ray scientific satellite ASTRO-H (JAXA) initiated by the Institute of Space and Astronautical Science (ISAS). Both scientific instruments, one hosting a series of Compton Gamma Cameras and the other being a focal plane of a grazing incidence mirror telescope in the hard X-ray domain, are equipped with Cadmium Telluride based detectors. ASTRO-H will be operated in a Low Earth Orbit with a 31° inclination at ~550 km altitude, thus passing daily through the South Atlantic Anomaly radiation belt, a specially harsh environment where the detectors are suffering the effect of the interaction with trapped high energy protons. As CdTe detector performance might be affected by the irradiation, we investigate the effect of the accumulated proton fluence on their spectral response. To do so, we have characterized and irradiated representative samples of SGD and HXI detector under different conditions. The detectors in question, from ACRORAD, are single-pixels having a size of 2 mm by 2 mm and 750 µm thick. The Schottky contact is either made of an Indium or Aluminum for SGD and HXI respectively. We ran the irradiation test campaign at the Proton Irradiation Facility (PIF) at PSI, and ESA approved equipment to evaluate the radiation hardness of flight hardware. We simulated the proton flux expected on the sensors over the entire mission, and secondary neutrons flux due to primary proton interactions into the surrounding BGO active shielding. We eventually characterized the detector response evolution, emphasizing each detector spectral response as well as its stability by studying the so-called Polarization effect. The latter is provoking a spectral response degradation against time as a charge accumulation process occurs in Schottky type CdTe sensors. In this paper

Efficiency of respiratory-gated delivery of synchrotron-based pulsed proton irradiation

International Nuclear Information System (INIS)

Tsunashima, Yoshikazu; Vedam, Sastry; Dong, Lei; Bues, Martin; Balter, Peter; Smith, Alfred; Mohan, Radhe; Umezawa, Masumi; Sakae, Takeji

2008-01-01

Significant differences exist in respiratory-gated proton beam delivery with a synchrotron-based accelerator system when compared to photon therapy with a conventional linear accelerator. Delivery of protons with a synchrotron accelerator is governed by a magnet excitation cycle pattern. Optimal synchronization of the magnet excitation cycle pattern with the respiratory motion pattern is critical to the efficiency of respiratory-gated proton delivery. There has been little systematic analysis to optimize the accelerator's operational parameters to improve gated treatment efficiency. The goal of this study was to estimate the overall efficiency of respiratory-gated synchrotron-based proton irradiation through realistic simulation. Using 62 respiratory motion traces from 38 patients, we simulated respiratory gating for duty cycles of 30%, 20% and 10% around peak exhalation for various fixed and variable magnet excitation patterns. In each case, the time required to deliver 100 monitor units in both non-gated and gated irradiation scenarios was determined. Based on results from this study, the minimum time required to deliver 100 MU was 1.1 min for non-gated irradiation. For respiratory-gated delivery at a 30% duty cycle around peak exhalation, corresponding average delivery times were typically three times longer with a fixed magnet excitation cycle pattern. However, when a variable excitation cycle was allowed in synchrony with the patient's respiratory cycle, the treatment time only doubled. Thus, respiratory-gated delivery of synchrotron-based pulsed proton irradiation is feasible and more efficient when a variable magnet excitation cycle pattern is used

The martensitic transformation of Ti–Ni shape memory thin films under proton irradiation

International Nuclear Information System (INIS)

Gao, Z.Y.; Wang, H.Z.; Zhu, Y.Y.; Meng, X.L.; Cai, W.

2015-01-01

The martensitic transformation behavior of a Ti–Ni alloy irradiated by proton with different doses has been investigated. It is found that the samples irradiated by 150 keV protons have a two-step phase transformation during heating and only one-step transformation during cooling. The exothermic peak at higher temperature disappears during the following thermal cycling. A model based on the stress-assisted martensitic transformation was established by the Transport of Ions in Matter (TRIM) calculations in order to explain the transformation behavior. - Highlights: • Martensitic transformation behavior of TiNi alloy under proton irradiation • Two-step transformation appears upon heating for a sample irradiated at 150 keV. • One-step transformation appears upon cooling for a sample irradiated at 150 keV. • In the following thermal cycling, the higher temperature exothermic peak vanishes

MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2016-12-15

The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Radiation stability of proton irradiated zirconium carbide

International Nuclear Information System (INIS)

Yang, Yong; Dickerson, Clayton A.; Allen, Todd R.

2009-01-01

The use of zirconium carbide (ZrC) is being considered for the deep burn (DB)-TRISO fuel as a replacement for the silicon carbide coating. The radiation stability of ZrC was studied using 2.6 MeV protons, across the irradiation temperature range from 600 to 900degC and to doses up to 1.75 dpa. The microstructural characterization shows that the irradiated microstructure is comprised of a high density of nanometer-sized dislocation loops, while no irradiation induced amorphization or voids are observed. The lattice expansion induced by point defects is found to increase as the dose increases for the samples irradiated at 600 and 800degC, while for the 900degC irradiation, a slight lattice contraction is observed. The radiation hardening is also quantified using a micro indentation technique for the temperature and doses studies. (author)

High-energy proton irradiation of C57Bl6 mice under hindlimb unloading

Science.gov (United States)

Mendonca, Marc; Todd, Paul; Orschell, Christie; Chin-Sinex, Helen; Farr, Jonathan; Klein, Susan; Sokol, Paul

2012-07-01

Solar proton events (SPEs) pose substantial risk for crewmembers on deep space missions. It has been shown that low gravity and ionizing radiation both produce transient anemia and immunodeficiencies. We utilized the C57Bl/6 based hindlimb suspension model to investigate the consequences of hindlimb-unloading induced immune suppression on the sensitivity to whole body irradiation with modulated 208 MeV protons. Eight-week old C57Bl/6 female mice were conditioned by hindlimb-unloading. Serial CBC and hematocrit assays by HEMAVET were accumulated for the hindlimb-unloaded mice and parallel control animals subjected to identical conditions without unloading. One week of hindlimb-unloading resulted in a persistent, statistically significant 10% reduction in RBC count and a persistent, statistically significant 35% drop in lymphocyte count. This inhibition is consistent with published observations of low Earth orbit flown mice and with crewmember blood analyses. In our experiments the cell count suppression was sustained for the entire six-week period of observation and persisted for at least 7 days beyond the period of active hindlimb-unloading. C57Bl/6 mice were also irradiated with 208 MeV Spread Out Bragg Peak (SOBP) protons at the Midwest Proton Radiotherapy Institute at the Indiana University Cyclotron Facility. We found that at 8.5 Gy hindlimb-unloaded mice were significantly more radiation sensitive with 35 lethalities out of 51 mice versus 15 out of 45 control (non-suspended) mice within 30 days of receiving 8.5 Gy of SOBP protons (p =0.001). Both control and hindlimb-unloaded stocktickerCBC analyses of 8.5 Gy proton irradiated and control mice by HEMAVET demonstrated severe reductions in WBC counts (Lymphocytes and PMNs) by day 2 post-irradiation, followed a week to ten days later by reductions in platelets, and then reductions in RBCs about 2 weeks post-irradiation. Recovery of all blood components commenced by three weeks post-irradiation. CBC analyses of 8

Proton-threshold states in /sup 28/Si

Energy Technology Data Exchange (ETDEWEB)

Champagne, A E; Pitt, M L; Zhang, P H; Lee, Jr, L L; Levine, M J

1986-10-27

The /sup 27/Al(/sup 3/He, d)/sup 28/Si reaction has been used to locate candidates for resonances in the /sup 27/Al+p system residing near the proton-capture threshold in the energy region characteristic of quiescent stellar hydrogen burning. Two such states are observed at excitation energies E/sub x/=11.658 MeV (J/sup ..pi../=2/sup +/) and 11.671 MeV (J/sup ..pi../=1/sup -/). A comparison of the cross sections for the /sup 27/Al(/sup 3/He, d)/sup 28/Si and the /sup 27/Al(..cap alpha.., t)/sup 28/Si reactions implies angular-momentum transfers of l=2 and l=3, respectively, for the two states of interest. Using this result, an astrophysically significant upper limit on the thermonuclear reaction rate has been calculated for the /sup 27/Al(p, ..gamma..)/sup 28/Si reaction which is found to be too slow to affect the /sup 27/Al abundance in red giants.

Characterizations of Proton-irradiated wide bandgap semiconductor devices

International Nuclear Information System (INIS)

Kim, J. H.; Kim, H. R.; Ahn, J. H.

2008-04-01

Current-voltages were compared before and after proton irradiation. As expected from simulation results, 5keV protons severely damaged the transistors' performance compared to 25MeV protons. Also, the effects of both lower and higher fluencies were compared. Source-Drain currents were dramatically decreased under higher fluency. At the highest dose of 2x10 16 protons/cm 2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data is consistent with the introduction of defect centers in the HEMT structure by the high energy protons leading to a reduction in carrier concentration and mobility in the 2- dimensional electron gas channel due to the extremely thin 2DEG and the high displacement threshold energy, AlGaN/GaN HEMT has great potential for applications in earth orbit

Production of fast switching power thyristors by proton irradiation

International Nuclear Information System (INIS)

Sawko, D.C.; Bartko, J.

1983-01-01

There are several techniques currently employed by various manufacturers in the fabrication of fast switching power thyristors. Gold doping and irradiation by electron beams are among the more common ones. In all cases, the fast switching capability results from a reduction of the minority carrier lifetime of the host material by the introduction of carrier traps or recombination centers. However, accompanying this beneficial reduction in switching speed is a deleterious increase in forward voltage drop which also results from the introduction of carrier traps. Methods which minimize the voltage drop increase as the switching speed is reduced are highly desirable. One such method would achieve this by introducing the traps or recombination centers into well defined narrow regions where they will be more effective in reducing the switching speed than in increasing the forward voltage drop. Because the proton range-energy relationship in materials is relatively well defined and the lifetime reducing displacements occur near the end of their ranges, the lifetime in silicon can be reduced where desired by the precise control of proton energy. Dual energy proton beams from a tandem Van de Graaff accelerator were used in the experiments to determine whether proton beam irradiations offer advantages over other techniques. This was the subject of the present work. The results indicate that this is the preferred technique for reproducibly and rapidly processing fast switching thyristors with superior characteristics. The experimental procedure is discussed and comparisons are made with electron and neutron irradiated thyristors

Irradiation mixing of Al into U3Si

International Nuclear Information System (INIS)

Birtcher, R.C.; Ding, F.R.; Kestel, B.J.; Baldo, P.M.; Zaluzec, N.J.

1995-11-01

Thermal and irradiation induced intermixing of uranium silicide reactor fuels with the aluminum cladding is an important consideration in understanding their fission gas and fuel swelling behavior. The authors have used Rutherford backscattering to follow the behavior of an Al thin film on U 3 Si and U 3 Si 2 during 1.5 MeV Kr ion irradiation at temperatures of 30 and 350 C. After an initial dose during which no intermixing occurs, the Al mixes quickly into U 3 Si. The threshold dose is believed to be associated with an oxide layer between the Al and the uranium silicide. At 300 C and doses greater than threshold, rates of mixing and aluminide phase growth are extracted

Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors

International Nuclear Information System (INIS)

Tosi, C.; Bruzzi, M.; Macchiolo, A.; Scaringella, M.; Petterson, M.K.; Sadrozinski, H.F.-W.; Betancourt, C.; Manna, N.; Creanza, D.; Boscardin, M.; Piemonte, C.; Zorzi, N.; Borrello, L.; Messineo, A.

2007-01-01

The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of 1x10 15 cm -2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements

Minimum bar size for flexure testing of irradiated SiC/SiC composite

International Nuclear Information System (INIS)

Youngblood, G.E.; Jones, R.H.

1998-01-01

This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 x 6 x 2 mm 3 with a span-to-depth ratio of 10/1

Nano-scale chemical evolution in a proton-and neutron-irradiated Zr alloy

Energy Technology Data Exchange (ETDEWEB)

Harte, Allan, E-mail: allan.harte@manchester.ac.uk [The University of Manchester, Oxford Road, Manchester, M13 9PL (United Kingdom); Topping, M.; Frankel, P. [The University of Manchester, Oxford Road, Manchester, M13 9PL (United Kingdom); Jädernäs, D. [Studsvik Nuclear AB, SE 611 82, Nyköping (Sweden); Romero, J. [Westinghouse Electric Company, Columbia, SC (United States); Hallstadius, L. [Westinghouse Electric Sweden AB, SE 72163 Västerås (Sweden); Darby, E.C. [Rolls Royce Plc., Nuclear Materials, Derby (United Kingdom); Preuss, M. [The University of Manchester, Oxford Road, Manchester, M13 9PL (United Kingdom)

2017-04-15

Proton-and neutron-irradiated Zircaloy-2 are compared in terms of the nano-scale chemical evolution within second phase particles (SPPs) Zr(Fe,Cr){sub 2} and Zr{sub 2}(Fe,Ni). This is accomplished through ultra-high spatial resolution scanning transmission electron microscopy and the use of energy-dispersive X-ray spectroscopic methods. Fe-depletion is observed from both SPP types after irradiation with both irradiative species, but is heterogeneous in the case of Zr(Fe,Cr){sub 2}, predominantly from the edge region, and homogeneously in the case of Zr{sub 2}(Fe,Ni). Further, there is evidence of a delay in the dissolution of the Zr{sub 2}(Fe,Ni) SPP with respect to the Zr(Fe,Cr){sub 2}. As such, SPP dissolution results in matrix supersaturation with solute under both irradiative species and proton irradiation is considered well suited to emulate the effects of neutron irradiation in this context. The mechanisms of solute redistribution processes from SPPs and the consequences for irradiation-induced growth phenomena are discussed. - Highlights: •Protons emulate the effects of neutron irradiation in the evolution of chemistry and morphology of second phase particles. •Detailed energy-dispersive X-ray spectroscopy reveals heterogeneity in Zr-Fe-Cr SPPs both before and after irradiation. •Zr-Fe-Ni SPPs are delayed in irradiation-induced dissolution due to their better self-solubility with respect to Zr-Fe-Cr.

Effects of Si3+ and H+ Irradiation on Tungsten Evaluated by Internal Friction Method

International Nuclear Information System (INIS)

Hu Jing; Wang Xianping; Fang Qianfeng; Liu Changsong; Zhang Yanwen; Zhao Ziqiang

2013-01-01

Effects of Si 3+ and H + irradiation on tungsten were investigated by internal friction (IF) technique. Scanning electron microscope (SEM) analysis revealed that sequential dual Si+H irradiation resulted in more serious damage than single Si irradiation. After irradiation, the IF background was significantly enhanced. Besides, two obvious IF peaks were initially found in temperature range of 70∼330 K in the sequential Si+H irradiated tungsten sample. The mechanism of increased IF background for the irradiated samples was suggested to originate from the high density dislocations induced by ion irradiation. On the other hand, the relaxation peak P L and non-relaxation peak P H in the Si+H irradiated sample were ascribed to the interaction process of hydrogen atoms with mobile dislocations and transient processes of hydrogen redistribution, respectively. The obtained experimental results verified the high sensitivity of IF method on the irradiation damage behaviors in nuclear materials

The semiconductor doping with radiation defects via proton and alpha-particle irradiation. Review

CERN Document Server

Kozlov, V A

2001-01-01

Paper presents an analytical review devoted to semiconductor doping with radiation defects resulted from irradiation by light ions, in particular, by protons and alpha-particles. One studies formation of radiation defects in silicon, gallium arsenide and indium phosphide under light ion irradiation. One analyzes effect of proton and alpha-particle irradiation on electric conductivity of the above-listed semiconducting materials. Semiconductor doping with radiation defects under light ion irradiation enables to control their electrophysical properties and to design high-speed opto-, micro- and nanoelectronic devices on their basis

Effects of High-Energy Proton-Beam Irradiation on the Magnetic Properties of ZnO Nanorods

Energy Technology Data Exchange (ETDEWEB)

Park, Jun Kue; Kwon, Hyeok-Jung; Cho, Yong Sub [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2015-10-15

There are still many problem for the application due to its unstable magnetism state and too small magnetization values. Here we investigate magnetic properties of ZnO nanorods after high-energy proton-beam irradiation. Electron spin resonance (ESR) measurement on temperature was made to identify intrinsic or extrinsic defects as well as to observe magnetic ordering after irradiation. Understanding the effects of proton beam irradiation on magnetic behavior may help to shed light on the mechanism responsible for the magnetic ordering in this material. We have investigated proton-beam irradiation effects on the magnetic properties of ZnO nanorods. After irradiation a broad ESR line is observed, indicating emergence of ferromagnetic ordering up to room temperature. In M-H curve, stronger coercive field is observed after irradiation.

Performance evaluation of gamma irradiated SiR-EPDM blends

Energy Technology Data Exchange (ETDEWEB)

Deepalaxmi, R., E-mail: deepalaxmivaithi@gmail.com; Rajini, V.

2014-07-01

Highlights: • The effects of gamma irradiation on SiR-EPDM blend are examined. • Cross-linking reaction is dominant in blends C, D and E, due to higher EPDM content. • The tensile strength and hardness of blend E is improved by gamma irradiation. • The blend C and EPDM rich blends (D, E) are found to have superior performance. • Among C, D and E, suitable blend can be selected for a particular NPP application. - Abstract: Cable insulation materials (CIM) should perform their safety functions throughout their installed life in nuclear power plants (NPP). The CIM will be exposed to gamma irradiation at the installed locations. In order to forecast long-term performance of CIM, the short time accelerated testing was carried out. Due to its good mechanical strength, ethylene propylene diene monomer (EPDM) is widely used as CIM. Silicone rubber (SiR) is used in high temperature environments, due to its good di-electric properties/hydrophobicity. The blending of these two polymers may result in the improvement in their specific properties. This paper analyses the effects of gamma irradiation on the five different compositions (90-10; 70-30; 50-50; 30-70; 10-90) of SiR-EPDM blends. The blends were exposed to four different doses (25 Mrad, 100 Mrad, 200 Mrad and 250 Mrad) of gamma irradiation. The electrical and mechanical parameters like volume resistivity (VRY), surface resistivity (SRY), tensile strength (TS), elongation at break (EB), hardness (H) of the virgin and gamma irradiated blends were determined as per ASTM/IEC standards. The nature of degradation was investigated using Fourier transform infrared spectroscopy (FTIR). The simultaneous occurrence of cross-linking and chain scission is found to be the mechanism for ageing in SiR-EPDM blends. The electrical parameters such as volume resistivity and surface resistivity of all the blends are found to improve for all doses of gamma irradiation. To validate the influence of cross-linking reaction of the Si

Analysis of Giant-nucleated Cell Formation Following X-ray and Proton Irradiations

Science.gov (United States)

Almahwasi, Ashraf Abdu

Radiation-induced genetic instability has been observed in survivors of irradiated cancerous and normal cells in vitro and in vivo and has been determined in different forms, such as delayed cell death, chromosomal aberration or mutation. A well defined and characterized normal human-diploid AG1522 fibroblast cell line was used to study giant-nucleated cell (GCs) formation as the ultimate endpoint of this research. The average nuclear cross-sectional areas of the AG1522 cells were measured in mum2. The doubling time required by the AG1522 cells to divide was measured. The potential toxicity of the Hoechst dye at a working concentration on the live AG1522 cells was assessed. The yield of giant cells was determined at 7, 14 and 21 days after exposure to equivalent clinical doses of 0.2, 1 or 2 Gy of X-ray or proton irradiation. Significant differences were found to exist between X-ray or proton irradiation when compared with sham-irradiated control populations. The frequency of GCs induced by X-rays was also compared to those formed in proton irradiated cultures. The results confirm that 1 Gy X-rays are shown to induce higher rates of mitotically arrested GCs, increasing continually over time up to 21 days post-irradiation. The yield of GCs was significantly greater (10%) compared to those formed in proton populations (2%) 21 days postirradiation. The GCs can undergo a prolonged mitotic arrest that significantly increases the length of cell cycle. The arrest of GCs at the mitotic phase for longer periods of time might be indicative of a strategy for cell survival, as it increases the time available for DNA repair and enables an alternative route to division for the cells. However, the reduction in their formation 21 days after both types of radiation might favour GCs formation, ultimately contributing to carcinogenesis or cancer therapy resistance. The X-ray experiments revealed a dose-dependent increase in the GCs up to 14 days after irradiation. Although the proton

Formation of Cavities at and Away from Grain Boundaries during 600 MeV Proton Irradiation

DEFF Research Database (Denmark)

Singh, Bachu Narain; Leffers, Torben; Green, W. V.

1982-01-01

High-purity aluminium (99.9999%) was irradiated with 600 MeV protons at the Swiss Institute for Nuclear Research (SIN) with a damage rate of 3,5 x 10^-6 dpa/s. Irradiation with 600 MeV protons produces helium, hydrogen, and other impurities through mutational reactions. The irradiation experiment...

Analytical dose modeling for preclinical proton irradiation of millimetric targets.

Science.gov (United States)

Vanstalle, Marie; Constanzo, Julie; Karakaya, Yusuf; Finck, Christian; Rousseau, Marc; Brasse, David

2018-01-01

Due to the considerable development of proton radiotherapy, several proton platforms have emerged to irradiate small animals in order to study the biological effectiveness of proton radiation. A dedicated analytical treatment planning tool was developed in this study to accurately calculate the delivered dose given the specific constraints imposed by the small dimensions of the irradiated areas. The treatment planning system (TPS) developed in this study is based on an analytical formulation of the Bragg peak and uses experimental range values of protons. The method was validated after comparison with experimental data from the literature and then compared to Monte Carlo simulations conducted using Geant4. Three examples of treatment planning, performed with phantoms made of water targets and bone-slab insert, were generated with the analytical formulation and Geant4. Each treatment planning was evaluated using dose-volume histograms and gamma index maps. We demonstrate the value of the analytical function for mouse irradiation, which requires a targeting accuracy of 0.1 mm. Using the appropriate database, the analytical modeling limits the errors caused by misestimating the stopping power. For example, 99% of a 1-mm tumor irradiated with a 24-MeV beam receives the prescribed dose. The analytical dose deviations from the prescribed dose remain within the dose tolerances stated by report 62 of the International Commission on Radiation Units and Measurements for all tested configurations. In addition, the gamma index maps show that the highly constrained targeting accuracy of 0.1 mm for mouse irradiation leads to a significant disagreement between Geant4 and the reference. This simulated treatment planning is nevertheless compatible with a targeting accuracy exceeding 0.2 mm, corresponding to rat and rabbit irradiations. Good dose accuracy for millimetric tumors is achieved with the analytical calculation used in this work. These volume sizes are typical in mouse

Parameterisation of radiation effects on CVD diamond for proton irradiation

International Nuclear Information System (INIS)

Hartjes, F.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.

1999-01-01

The paper reviews measurements of the radiation hardness of CVD diamond for 24 GeV/c proton irradiation at fluences up to 5 * 10 15 protons/cm 2 . The results not only show radiation damage but also an annealing effect that is dominant at levels around 10 15 protons/cm 2 . A model describing both effects is introduced, enabling a prediction of the distribution curve of the charge signal for other levels

Irradiation and annealing of p-type silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor' eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

2014-02-21

The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

Defect structure in proton-irradiated copper and nickel

International Nuclear Information System (INIS)

Tsukuda, Noboru; Ehrhart, P.; Jaeger, W.; Schilling, W.; Dworschak, F.; Gadalla, A.A.

1987-01-01

This single crystals of copper or nickel with a thickness of about 10 μm are irradiated with 3 MeV protons at room temperature and the structures of resultant defects are investigated based on measurements of the effects of irradiation on the electrical resistivity, length, lattice constants, x-ray diffraction line profile and electron microscopic observations. The measurements show that the electrical resistivity increases with irradiation dose, while leveling off at high dose due to overlapping of irradiation cascades. The lattice constants decreases, indicating that many vacancies still remain while most of the interstitial stoms are eliminated, absorbed or consumed for dislocation loop formation. The x-ray line profile undergoes broadening, which is the result of dislocation loops, dislocation networks and SFT's introduced by the proton irradiation. Various defects have different effects though they cannot be identified separately from the profile alone. A satellite peak appears at a low angle, which seems to arise from periodic defect structures that are found in electron microscopic observations. In both copper and nickel, such periodic defect structures are seen over a wide range from high to low dose. Defect-free and defect-rich domains (defect walls), 0.5 to several μm in size, are alingned parallel to the {001} plane at intervals of 60 nm. The defect walls, which consist of dislocations, dislocation loops and SFT's, is 20 - 40 nm thick. (Nogami, K.)

Effects of neutron irradiation on the strength of continuous fiber reinforced SiC/SiC composites

Energy Technology Data Exchange (ETDEWEB)

Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H. [Pacific National Lab., Richland, WA (United States)

1997-04-01

Flexural strength data as a function of irradiation temperature and dose for a SiC{sub f}/SiC composite made with Nicalon-CG fiber suggest three major degradation mechanisms. Based on an analysis of tensile strength and microstructural data for irradiated Nicalon-CG and Hi-Nicalon fibers, it is anticipated that these degradation mechanisms will be alleviated in Hi-Nicalon reinforced composites.

Survival of tumor cells after proton irradiation with ultra-high dose rates

International Nuclear Information System (INIS)

Auer, Susanne; Hable, Volker; Greubel, Christoph; Drexler, Guido A; Schmid, Thomas E; Belka, Claus; Dollinger, Günther; Friedl, Anna A

2011-01-01

Laser acceleration of protons and heavy ions may in the future be used in radiation therapy. Laser-driven particle beams are pulsed and ultra high dose rates of >10 9 Gy s -1 may be achieved. Here we compare the radiobiological effects of pulsed and continuous proton beams. The ion microbeam SNAKE at the Munich tandem accelerator was used to directly compare a pulsed and a continuous 20 MeV proton beam, which delivered a dose of 3 Gy to a HeLa cell monolayer within < 1 ns or 100 ms, respectively. Investigated endpoints were G2 phase cell cycle arrest, apoptosis, and colony formation. At 10 h after pulsed irradiation, the fraction of G2 cells was significantly lower than after irradiation with the continuous beam, while all other endpoints including colony formation were not significantly different. We determined the relative biological effectiveness (RBE) for pulsed and continuous proton beams relative to x-irradiation as 0.91 ± 0.26 and 0.86 ± 0.33 (mean and SD), respectively. At the dose rates investigated here, which are expected to correspond to those in radiation therapy using laser-driven particles, the RBE of the pulsed and the (conventional) continuous irradiation mode do not differ significantly

Changes of initiation, promotion and metastatic enzyme system in human breast cancer with the proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Sohn, Y. H.; Kim, S. W.; Lee, K. S.; Mo, J. Y. [Dongguk University, Seoul (Korea, Republic of)

2010-04-15

Proton irradiations in the cells were significantly decreased cell viability but increased the QR activity in a dose-dependent manner. Cell viability was 92.3%, 88.4%, 81.8%, 72.4%, 68.9% at doses of 0.5, 2, 8, 16, and 32 Gy, respectively. At doses of 2, 8, 16, and 32 Gy, QR activity was increased 1.27-, 1.31-, 1.45- and 2.08-fold. However, negligible GST activity in the cells was detected and the activity was not changed by proton irradiation. Proton irradiation also increased GSH contents by 1.18- and 1.21-fold at doses of 0.5 and 2 Gy. In contrast, the ODC activity, a key enzyme in polyamine biosynthesis and tumor promotion, was decreased in a dose-dependent manner. We also investigated anti-metastatic effects of proton beam irradiation in breast cancer cells. Invasion and wound healing assay showed that metastatic activities in breast cancer cells were significantly decreased in a dose-dependent manner by proton beam irradiation. In zymography of MMP-9, the activity was slightly diminished. These results suggest that breast cancer chemopreventive potential was increased with proton irradiation by increasing the QR activity and the GSH levels and by inhibiting the ODC activity.

Changes of initiation, promotion and metastatic enzyme system in human breast cancer with the proton irradiation

International Nuclear Information System (INIS)

Sohn, Y. H.; Kim, S. W.; Lee, K. S.; Mo, J. Y.

2010-04-01

Proton irradiations in the cells were significantly decreased cell viability but increased the QR activity in a dose-dependent manner. Cell viability was 92.3%, 88.4%, 81.8%, 72.4%, 68.9% at doses of 0.5, 2, 8, 16, and 32 Gy, respectively. At doses of 2, 8, 16, and 32 Gy, QR activity was increased 1.27-, 1.31-, 1.45- and 2.08-fold. However, negligible GST activity in the cells was detected and the activity was not changed by proton irradiation. Proton irradiation also increased GSH contents by 1.18- and 1.21-fold at doses of 0.5 and 2 Gy. In contrast, the ODC activity, a key enzyme in polyamine biosynthesis and tumor promotion, was decreased in a dose-dependent manner. We also investigated anti-metastatic effects of proton beam irradiation in breast cancer cells. Invasion and wound healing assay showed that metastatic activities in breast cancer cells were significantly decreased in a dose-dependent manner by proton beam irradiation. In zymography of MMP-9, the activity was slightly diminished. These results suggest that breast cancer chemopreventive potential was increased with proton irradiation by increasing the QR activity and the GSH levels and by inhibiting the ODC activity.

Effect of proton and electron-irradiation intensity on radiation-induced damages in silicon bioolar transistors

International Nuclear Information System (INIS)

Bannikov, Yu.A.; Gorin, B.M.; Kozhevnikov, V.P.; Mikhnovich, V.V.; Gusev, L.I.

1981-01-01

The increase of radiation-induced damages of bipolar n-p-n transistors 8-12 times with the irradiation intensity decrease by protons from 4.07x1010 to 2.5x107 cm-2 x c-1 has been found experimentally. damages of p-n-p transistors vary in the opposite way - they are decreased 2-3 times with the irradiation intensity decrease within the same limits. the dependence of damages on intansity of proton irradiation occurs at the dose rate by three orders less than it has been observed for electron irradiation. the results obtained are explained by the dependence of radiation defectoformation reactions on charge state of defects with account for the role of formation of disordering regions upon proton irradiation [ru

An overview of the PIREX Proton Irradiation facility and its research program

Energy Technology Data Exchange (ETDEWEB)

Victoria, M.; Gavillet, D. [Association EURATOM, Villigen (Switzerland)

1995-10-01

The main design characteristics of PIREX (Proton Irradiation Experiment) are described. The facility is installed in the 590 MeV proton beam of the PSI accelerator system. Its main task is the irradiation and testing of fusion reactor candidate materials. Protons of this energy produce simultaneously in the target material displacement damage and impurities, amongst them helium. They can therefore simulate possible synergistic effects between helium and damage that would result from irradiations with the fusion neutrons. The research program being developed includes studies on both materials of technological interest, such as martensitic stainless steels and Mo - based alloys and basic radiation damage research on pure metals. The facility is also being used for actinide transmutation studies, in the so called ATHENA experiment. The main directions of the research program are described and examples of present results are given.

Determination of proton and neutron spectra in the LANSCE spallation irradiation facility

International Nuclear Information System (INIS)

James, M.R.; Maloy, S.A.; Sommer, W.F.; Fowler, M.M.; Dry, D.; Ferguson, P.D.; Mueller, G.; Corzine, R.K.

1999-01-01

Materials samples were recently irradiated in the Los Alamos Radiation Effects Facility (LASREF) at the Los Alamos Neutron Science Center (LANSCE) to provide data for the Accelerator Production of Tritium (APT) project on the effect of irradiation on the mechanical and physical properties of materials. The targets were configured to expose samples to a variety of radiation environments including, high-energy protons, mixed protons and high-energy neutrons, and low-energy neutrons. The samples were irradiated for approximately six months during a ten month period using an 800 MeV proton beam with a circular Gaussian shape of approximately 2σ = 3.0 cm. At the end of this period, the samples were extracted and tested. Activation foils were also extracted that had been placed in proximity to the materials samples. These were used to quantify the fluences in various locations

Parameterisation of radiation effects on CVD diamond for proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Hartjes, F.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M

1999-08-01

The paper reviews measurements of the radiation hardness of CVD diamond for 24 GeV/c proton irradiation at fluences up to 5{sup *}10{sup 15} protons/cm{sup 2}. The results not only show radiation damage but also an annealing effect that is dominant at levels around 10{sup 15} protons/cm{sup 2}. A model describing both effects is introduced, enabling a prediction of the distribution curve of the charge signal for other levels.

Whole body proton irradiation causes acute damage to bone marrow hematopoietic progenitor and stem cells in mice.

Science.gov (United States)

Chang, Jianhui; Wang, Yingying; Pathak, Rupak; Sridharan, Vijayalakshmi; Jones, Tamako; Mao, Xiao Wen; Nelson, Gregory; Boerma, Marjan; Hauer-Jensen, Martin; Zhou, Daohong; Shao, Lijian

2017-12-01

Exposure to proton irradiation during missions in deep space can lead to bone marrow injury. The acute effects of proton irradiation on hematopoietic stem and progenitor cells remain undefined and thus were investigated. We exposed male C57BL/6 mice to 0.5 and 1.0 Gy proton total body irradiation (proton-TBI, 150 MeV) and examined changes in peripheral blood cells and bone marrow (BM) progenitors and LSK cells 2 weeks after exposure. 1.0 Gy proton-TBI significantly reduced the numbers of peripheral blood cells compared to 0.5 Gy proton-TBI and unirradiated animals, while the numbers of peripheral blood cell counts were comparable between 0.5 Gy proton-TBI and unirradiated mice. The frequencies and numbers of LSK cells and CMPs in BM of 0.5 and 1.0 Gy irradiated mice were decreased in comparison to those of normal controls. LSK cells and CMPs and their progeny exhibited a radiation-induced impairment in clonogenic function. Exposure to 1.0 Gy increased cellular apoptosis but not the production of reactive oxygen species (ROS) in CMPs two weeks after irradiation. LSK cells from irradiated mice exhibited an increase in ROS production and apoptosis. Exposure to proton-TBI can induce acute damage to BM progenitors and LSK cells.

Anti-angiogenic activity in metastasis of human breast cancer cells irradiated by a proton beam

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyu-Shik; Shin, Jin-Sun; Nam, Kyung-Soo [Dongguk University, Gyeongju (Korea, Republic of); Shon, Yun-Hee [Kyungpook National University Hospital, Daegu (Korea, Republic of)

2012-07-15

Angiogenesis is an essential process of metastasis in human breast cancer. We investigated the effects of proton beam irradiation on angiogenic enzyme activities and their expressions in MCF-7 human breast cancer cells. The regulation of angiogenic regulating factors, of transforming growth factor-β (TGF-β) and of vesicular endothelial growth factor (VEGF) expression in breast cancer cells irradiated with a proton beam was studied. Aromatase activity and mRNA expression, which is correlated with metastasis, were significantly decreased by irradiation with a proton beam in a dose-dependent manner. TGF-β and VEGF transcriptions were also diminished by proton beam irradiation. In contrast, transcription of tissue inhibitors of matrix metalloproteinases (TIMPs), also known as biological inhibitors of matrix metalloproteinases (MMPs), was dose-dependently enhanced. Furthermore, an increase in the expression of TIMPs caused the MMP-9 activity to be diminished and the MMP-9 and the MMP-2 expressions to be decreased. These results suggest that inhibition of angiogenesis by proton beam irradiation in breast cancer cells is closely related to inhibitions of aromatase activity and transcription and to down-regulation of TGF-β and VEGF transcription.

Defect recovery in aluminum irradiated with protons at 20 K

DEFF Research Database (Denmark)

Linderoth, S.; Rajainmäki, H.; Nieminen, R. M.

1987-01-01

Aluminum single crystals have been irradiated with 7.0-MeV protons at 20 K. The irradiation damage and its recovery are studied with positron-lifetime spectroscopy between 20 and 500 K. Stage-I recovery is observed at 40 K. At 240 K, loss of freely migrating vacancies is observed. Hydrogen...

Irradiation-induced hardening/softening in SiO2 studied with instrumented indentation

International Nuclear Information System (INIS)

Nakano, Shinsuke; Muto, Shunsuke; Tanabe, Tetsuo

2005-01-01

To understand the plastic deformation mechanism of SiO 2 polytypes, we measured the mechanical parameters of He + -irradiated crystalline SiO 2 (α-quartz, c-SiO 2 ) and vitreous SiO 2 (silica glass, v-SiO 2 ) as functions of the irradiation dose, by using the instrumented indentation method combined with a finite-element analysis. We extracted the effects of local rotation and bending of the SiO 4 framework (the degree of local structural freedom), which play key roles in the plastic deformation, and expressed the hardness change with a simple formula. For v-SiO 2 , the changes in the density and the number of broken bonds correlated well with the change in the degree of freedom. In contrast, for c-SiO 2 the present formulation was insufficient to fully express the hardness change in the structural disordering regime. The structure change by irradiation peculiar to this material is discussed, based on the theoretical formulation

Vacancy-type defects in electron and proton irradiated ZnO and ZnS

International Nuclear Information System (INIS)

Brunner, S.; Puff, W.; Logar, B.; Baumann, H.

1997-01-01

A study aimed at investigating basic properties of radiation induced effects in ZnO and ZnS has been presented. Positron annihilation experiments (both lifetime and Doppler-broadening measurements) were performed on polycrystalline samples. For ZnO it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics and several annealing stages were observed, related to the annealing of variously sized vacancy complexes. The lifetime in defected, proton irradiated polycrystalline ZnS samples, grown by chemical vapour deposition, indicates the formation of large defect complexes. The annealing of proton irradiated ZnS in air at temperatures between 650 C and 750 C leads to significant oxidation and transformation into ZnO. 10 refs, 2 figs, 1 tab

Vacancy-type defects in electron and proton irradiated ZnO and ZnS

Energy Technology Data Exchange (ETDEWEB)

Brunner, S.; Puff, W.; Logar, B. [Technische Univ., Graz (Austria). Inst. fuer Kernphysik; Mascher, P. [McMaster Univ., Hamilton, ON (Canada). Dept. of Biology; Balogh, A.G. [Technische Hochschule Darmstadt (Germany); Baumann, H. [Frankfurt Univ. (Germany). Inst. fuer Kernphysik

1997-10-01

A study aimed at investigating basic properties of radiation induced effects in ZnO and ZnS has been presented. Positron annihilation experiments (both lifetime and Doppler-broadening measurements) were performed on polycrystalline samples. For ZnO it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics and several annealing stages were observed, related to the annealing of variously sized vacancy complexes. The lifetime in defected, proton irradiated polycrystalline ZnS samples, grown by chemical vapour deposition, indicates the formation of large defect complexes. The annealing of proton irradiated ZnS in air at temperatures between 650 C and 750 C leads to significant oxidation and transformation into ZnO. 10 refs, 2 figs, 1 tab.

MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

International Nuclear Information System (INIS)

Yu Xiangkun; Shao Lin; Chen, Q.Y.; Trombetta, L.; Wang Chunyu; Dharmaiahgari, Bhanu; Wang Xuemei; Chen Hui; Ma, K.B.; Liu Jiarui; Chu, W.-K.

2006-01-01

We studied the irradiation effect of 2-MeV Si ions on HfO 2 films deposited on Si substrates. HfO 2 films ∼11 nm thick were deposited onto Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 x 10 14 cm -2 at room temperature, followed by rapid thermal annealing at 1000 deg. C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO 2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors

Effect of SiO2 addition and gamma irradiation on the lithium borate glasses

Science.gov (United States)

Raut, A. P.; Deshpande, V. K.

2018-01-01

The physical properties like density, glass transition temperature (Tg), and ionic conductivity of lithium borate (LB) glasses with SiO2 addition were measured before and after gamma irradiation. Remarkable changes in properties have been obtained in the physical properties of LB glasses with SiO2 addition and after gamma irradiation. The increase in density and glass transition temperature of LB glasses with SiO2 addition has been explained with the help of increase in density of cross linking due to SiO4 tetrahedra formation. The increase in ionic conductivity with SiO2 addition was explained with the help of ‘mixed glass former effect’. The increase in density and Tg of LB glasses with SiO2 addition after gamma irradiation has been attributed to fragmentation of bigger ring structure into smaller rings, which increases the density of cross linking and hence compaction. The exposure of gamma irradiation has lead to decrease in ionic conductivity of LB glasses with SiO2 addition. The atomic displacement caused by gamma irradiation resulted in filling of interstices and decrease in trapping sites. This explains the obtained decrease in ionic conductivity after gamma irradiation of glasses. The obtained results of effect of SiO2 addition and gamma irradiation on the density, Tg and ionic conductivity has been supported by FTIR results.

Persistent changes in neuronal structure and synaptic plasticity caused by proton irradiation.

Science.gov (United States)

Parihar, Vipan K; Pasha, Junaid; Tran, Katherine K; Craver, Brianna M; Acharya, Munjal M; Limoli, Charles L

2015-03-01

Cranial radiotherapy is used routinely to control the growth of primary and secondary brain tumors, but often results in serious and debilitating cognitive dysfunction. In part due to the beneficial dose depth distributions that may spare normal tissue damage, the use of protons to treat CNS and other tumor types is rapidly gaining popularity. Astronauts exposed to lower doses of protons in the space radiation environment are also at risk for developing adverse CNS complications. To explore the consequences of whole body proton irradiation, mice were subjected to 0.1 and 1 Gy and analyzed for morphometric changes in hippocampal neurons 10 and 30 days following exposure. Significant dose-dependent reductions (~33 %) in dendritic complexity were found, when dendritic length, branching and area were analyzed 30 days after exposure. At equivalent doses and times, significant reductions in the number (~30 %) and density (50-75 %) of dendritic spines along hippocampal neurons of the dentate gyrus were also observed. Immature spines (filopodia, long) exhibited the greatest sensitivity (1.5- to 3-fold) to irradiation, while more mature spines (mushroom) were more resistant to changes over a 1-month post-irradiation timeframe. Irradiated granule cell neurons spanning the subfields of the dentate gyrus showed significant and dose-responsive reductions in synaptophysin expression, while the expression of postsynaptic density protein (PSD-95) was increased significantly. These findings corroborate our past work using photon irradiation, and demonstrate for the first time, dose-responsive changes in dendritic complexity, spine density and morphology and synaptic protein levels following exposure to low-dose whole body proton irradiation.

Scanning of irradiated silicon detectors using $\\alpha$ particles and low energy protons

CERN Document Server

Casse, G L; Glaser, M; Kohout, Z; Konícek, J; Lemeilleur, F; Leroy, C; Linhart, V; Mares, J J; Pospísil, S; Roy, P; Sopko, B; Sinor, M; Svejda, J; Vorobel, V; Wilhelm, I

1999-01-01

In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5~MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection efficiency was determined as a function of fluence

Experimental design and analysis for irradiation of SiC/SiC composite tubes under a prototypic high heat flux

Science.gov (United States)

Petrie, Christian M.; Koyanagi, Takaaki; McDuffee, Joel L.; Deck, Christian P.; Katoh, Yutai; Terrani, Kurt A.

2017-08-01

The purpose of this work is to design an irradiation vehicle for testing silicon carbide (SiC) fiber-reinforced SiC matrix composite cladding materials under conditions representative of a light water reactor in order to validate thermo-mechanical models of stress states in these materials due to irradiation swelling and differential thermal expansion. The design allows for a constant tube outer surface temperature in the range of 300-350 °C under a representative high heat flux (∼0.66 MW/m2) during one cycle of irradiation in an un-instrumented ;rabbit; capsule in the High Flux Isotope Reactor. An engineered aluminum foil was developed to absorb the expansion of the cladding tubes, due to irradiation swelling, without changing the thermal resistance of the gap between the cladding and irradiation capsule. Finite-element analyses of the capsule were performed, and the models used to calculate thermal contact resistance were validated by out-of-pile testing and post-irradiation examination of the foils and passive SiC thermometry. Six irradiated cladding tubes (both monoliths and composites) were irradiated and subsequently disassembled in a hot cell. The calculated temperatures of passive SiC thermometry inside the capsules showed good agreement with temperatures measured post-irradiation, with two calculated temperatures falling within 10 °C of experimental measurements. The success of this design could lead to new opportunities for irradiation applications with materials that suffer from irradiation swelling, creep, or other dimensional changes that can affect the specimen temperature during irradiation.

Experimental design and analysis for irradiation of SiC/SiC composite tubes under a prototypic high heat flux

Energy Technology Data Exchange (ETDEWEB)

Petrie, Christian M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); McDuffee, Joel L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Deck, Christian P. [General Atomics, San Diego, CA (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Terrani, Kurt A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-05-04

The purpose of this work is to design an irradiation vehicle for testing silicon carbide (SiC) fiber-reinforced SiC matrix composite cladding materials under conditions representative of a light water reactor in order to validate thermo-mechanical models of stress states in these materials due to irradiation swelling and differential thermal expansion. The design allows for a constant tube outer surface temperature in the range of 300–350 °C under a representative high heat flux (~0.66 MW/m²) during one cycle of irradiation in an un-instrumented “rabbit” capsule in the High Flux Isotope Reactor. An engineered aluminum foil was developed to absorb the expansion of the cladding tubes, due to irradiation swelling, without changing the thermal resistance of the gap between the cladding and irradiation capsule. Finite-element analyses of the capsule were performed, and the models used to calculate thermal contact resistance were validated by out-of-pile testing and post-irradiation examination of the foils and passive SiC thermometry. Six irradiated cladding tubes (both monoliths and composites) were irradiated and subsequently disassembled in a hot cell. The calculated temperatures of passive SiC thermometry inside the capsules showed good agreement with temperatures measured post-irradiation, with two calculated temperatures falling within 10 °C of experimental measurements. Furthermore, the success of this design could lead to new opportunities for irradiation applications with materials that suffer from irradiation swelling, creep, or other dimensional changes that can affect the specimen temperature during irradiation.

Influence of IR-laser irradiation on α-SiC-chromium silicides ceramics

International Nuclear Information System (INIS)

Vlasova, M.; Marquez Aguilar, P.A.; Resendiz-Gonzalez, M.C.; Kakazey, M.; Bykov, A.; Gonzalez Morales, I.

2005-01-01

This project investigated the influence of IR-laser irradiation (λ = 1064 nm, P = 240 mW) on composite ceramics SiC-chromium silicides (CrSi 2 , CrSi, Cr 5 Si 3 ) by methods of X-ray diffraction, electron microscopy, atomic force microscopy, and X-ray microanalysis. Samples were irradiated in air. It was established that a surface temperature of 1990 K was required to melt chromium silicides, evaporate silicon from SiC, oxidize chromium silicides, and enrich superficial layer by carbon and chromium oxide

Positron annihilation studies on proton irradiated nitrile rubber

International Nuclear Information System (INIS)

Ravi Chandran, T.S.G.; Lobo, Blaise; Ranganath, M.R.; Gopal, S.; Sreeramalu, V.

1996-01-01

NBR (Nitrile Butadiene Rubber) was irradiated with 4 MeV proton beam from a variable energy cyclotron (VEC) at VEC Centre, Calcutta, to a flux of 10 16 ions/cm 2 , in a vacuum of 10 -9 Torr and was studied through positron lifetime measurements

Studying the destruction of various fluoropolymers caused by gamma - irradiation and MeV protons

International Nuclear Information System (INIS)

Allayarov, S.R.; Ol'khov, Yu.A.; Gordon, D.A.; Muntele, C.I.; Muntele, I.C.; Ila, D.; Dixon, D.A.; Kispert, L.D.; Nikolskij, V.G.

2007-01-01

While fluoropolymers are normally used as anti-adherent coating, they are intensely investigated for potential use in various radiation dosimeter applications as well as space technology. In order to understand the discrepancy between high chemical and thermal stability and low radiation stability of various fluoropolymers, we are bombarding them with 1 MeV protons to fluences up to 2·10 15 protons/cm 2 as well as subjected some of them to gamma-irradiation by dose of 10 kGy. During bombardment we are monitoring the emission of chemical species with a residual gas analyzer. Gamma-irradiated samples were tested by radio thermoluminescence method. The results we present here are a good indicator that material damage happens much earlier than 2·10 15 protons/cm 2 and that further work should be addressed at much smaller exposures. Radio thermoluminescence also can be used at small doses of irradiation (10-30 kGy). The thermomechanical curve of radiation-free polyvinyledenefluoride (PVDF) is characteristic for topologically di-block amorphous polymer of quasi-crossing structure. In the temperature range of from 173 K up to 228 K polymer is vitrified. The vitrification temperature of PVDF is 228 K. All molecular-relaxation and quantitative characteristics of PVDF were determined before and after its irradiation by protons. Protons caused significant changes in PVDF. From di-block amorphous it transformed in to amorphous-crystalline structure. An appreciable influence of dose at proton irradiation of polymer was revealed both on topological level and on molecular-relaxation one. (authors)

Tensile properties of several 800 MeV proton-irradiated bcc metals and alloys

International Nuclear Information System (INIS)

Brown, R.D.; Wechsler, M.S.; Tschalar, C.

1987-01-01

A spallation neutron source for the 600-MeV proton accelerator facility at the Swiss Institute for Nuclear Research (SIN) consists of a vertical cylinder filled with molten Pb-Bi. The proton beam enters the cylinder, passing upward through a window in contact with the Pb-Bi eutectic liquid that must retain reasonable strength and ductility upon irradiation at about 673 K to fluence of about 1 x 10/sup 25/ protons/m/sup 2/. Investigations are underway at the 800-MeV proton accelerator at the Los Alamos Meson Physics Facility (LAMPF) to test the performance of candidate SIN window materials under appropriate conditions of temperature, irradiation, and environment. Based on considerations of chemical compatibility with molten Pb-Bi, as well as interest in identifying fundamental radiation damage mechanisms, Fe, Ta, Fe-2.25Cr-1Mo, and Fe-12Cr-1Mo(HT-9) were chosen as candidate materials. Sheet tensile samples, 0.5-mm thick, of the four materials were fabricated and heat treated. The samples were sealed inside capsules containing Pb-Bi and were proton-irradiated at LAMPF to two fluences, 4.8 and 54 x 10/sup 23/ p/m/sup 2/. The beam current was approximately equal to the 1 mA anticipated for the upgraded SIN accelerator. The power deposited by the proton beam in the capsules was sufficient to maintain sample temperatures of about 673 K. Post-irradiation tensile tests were conducted at room temperature at a strain rate of 9 x 10/sup -4/s/sup -1/. The yield and ultimate strengths increased upon irradiation in all materials, while the ductility decreased, as indicated by the uniform strain. The pure metals, Ta and Fe, exhibited the greatest radiation hardening and embrittlement. The HT-9 alloy showed the smallest changes in strength and ductility. The increase in strength following irradiation is discussed in terms of a dispersed-barrier hardening model, for which the barrier sizes and formation cross sections are calculated

Defects annihilation behavior of neutron-irradiated SiC ceramics densified by liquid-phase-assisted method after post-irradiation annealing

Directory of Open Access Journals (Sweden)

Mohd Idzat Idris

2016-12-01

Full Text Available Numerous studies on the recovery behavior of neutron-irradiated high-purity SiC have shown that most of the defects present in it are annihilated by post-irradiation annealing, if the neutron fluence is less than 1×1026 n/m2 (>0.1MeV and the irradiation is performed at temperatures lower than 973K. However, the recovery behavior of SiC fabricated by the nanoinfiltrated and transient eutectic phase (NITE process is not well understood. In this study, the effects of secondary phases on the irradiation-related swelling and recovery behavior of monolithic NITE-SiC after post-irradiation annealing were studied. The NITE-SiC specimens were irradiated in the BR2 reactor at fluences of up to 2.0–2.5×1024 n/m2 (E>0.1MeV at 333–363K. This resulted in the specimens swelling up ∼1.3%, which is 0.1% higher than the increase seen in concurrently irradiated high-purity SiC. The recovery behaviors of the specimens after post-irradiation thermal annealing were examined using a precision dilatometer; the specimens were heated at temperatures of up to 1673K using a step-heating method. The recovery curves were analyzed using a first-order model, and the rate constants for each annealing step were obtained to determine the activation energy for volume recovery. The NITE-A specimen (containing 12 wt% sintering additives recovered completely after annealing at ∼1573K; however, it shrank because of the volatilization of the oxide phases at 1673K. The NITE-B specimen (containing 18wt% sintering additives did not recover fully, since the secondary phase (YAG was crystallized during the annealing process. The recovery mechanism of NITE-A SiC was based on the recombination of the C and Si Frenkel pairs, which were very closely sited or only slightly separated at temperatures lower than 1223K, as well as the recombination of the slightly separated C Frenkel pairs and the migration of C and Si interstitials at temperatures of 1223–1573K. That is to say, the

Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2015-12-15

A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Proton irradiation impacts age-driven modulations of cancer progression influenced by immune system transcriptome modifications from splenic tissue

International Nuclear Information System (INIS)

Wage, Justin; Ma, Lili; Peluso, Michael; Lamont, Clare; Hahnfeldt, Philip; Hlatky, Lynn; Beheshti, Afshin; Evens, Andrew M.

2015-01-01

Age plays a crucial role in the interplay between tumor and host, with additional impact due to irradiation. Proton irradiation of tumors induces biological modulations including inhibition of angiogenic and immune factors critical to 'hallmark' processes impacting tumor development. Proton irradiation has also provided promising results for proton therapy in cancer due to targeting advantages. Additionally, protons may contribute to the carcinogenesis risk from space travel (due to the high proportion of high-energy protons in space radiation). Through a systems biology approach, we investigated how host tissue (i.e. splenic tissue) of tumor-bearing mice was altered with age, with or without whole-body proton exposure. Transcriptome analysis was performed on splenic tissue from adolescent (68-day) versus old (736-day) C57BL/6 male mice injected with Lewis lung carcinoma cells with or without three fractionations of 0.5 Gy (1-GeV) proton irradiation. Global transcriptome analysis indicated that proton irradiation of adolescent hosts caused significant signaling changes within splenic tissues that support carcinogenesis within the mice, as compared with older subjects. Increases in cell cycling and immunosuppression in irradiated adolescent hosts with CDK2, MCM7, CD74 and RUVBL2 indicated these were the key genes involved in the regulatory changes in the host environment response (i.e. the spleen). Collectively, these results suggest that a significant biological component of proton irradiation is modulated by host age through promotion of carcinogenesis in adolescence and resistance to immunosuppression, carcinogenesis and genetic perturbation associated with advancing age. (author)

Dose-volume effects in the rat cervical spinal cord after proton irradiation

International Nuclear Information System (INIS)

Bijl, Hendrik P.; Vuijk, Peter van; Coppes, Rob P.; Schippers, Jacobus M.; Konings, Antonius W.T.; Kogel, Albert J. van der

2002-01-01

Purpose: To estimate dose-volume effects in the rat cervical spinal cord with protons. Methods and Materials: Wistar rats were irradiated on the cervical spinal cord with a single fraction of unmodulated protons (150-190 MeV) using the shoot through method, which employs the plateau of the depth-dose profile rather than the Bragg peak. Four different lengths of the spinal cord (2, 4, 8, and 20 mm) were irradiated with variable doses. The endpoint for estimating dose-volume effects was paralysis of fore or hind limbs. Results: The results obtained with a high-precision proton beam showed a marginal increase of ED 50 when decreasing the irradiated cord length from 20 mm (ED 50 = 20.4 Gy) to 8 mm (ED 50 = 24.9 Gy), but a steep increase in ED 50 when further decreasing the length to 4 mm (ED 50 = 53.7 Gy) and 2 mm (ED 50 = 87.8 Gy). These results generally confirm data obtained previously in a limited series with 4-6-MV photons, and for the first time it was possible to construct complete dose-response curves down to lengths of 2 mm. At higher ED 50 values and shorter lengths irradiated, the latent period to paralysis decreased from 125 to 60 days. Conclusions: Irradiation of variable lengths of rat cervical spinal cord with protons showed steeply increasing ED 50 values for lengths of less than 8 mm. These results suggest the presence of a critical migration distance of 2-3 mm for cells involved in regeneration processes

Charge Losses in Silicon Sensors and Electric-Field Studies at the Si-SiO$_2$ Interface

CERN Document Server

Poehlsen, Thomas

Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs ($eh$ pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of different wavelengths. Light of 1063 nm, 830 nm and 660 nm wavelength is used to generate $eh$ pairs along the whole sensor depth, a few $\\mu$m below the surface and very close to the surface, respectively. Segmented p$^+$n silicon strip sensors are used to study the electric field below the SiO$_2$ separating the strip implants. The sensors are investigated before and after irradiation with 12 keV x-rays to a dose of 1 MGy. It is found that the electric field close to the Si-SiO$_2$ interface depends on both the irradiation dose and the biasing history. For the non-irradiated sensors the observed dependence of the electric field on biasing history and humidity is qualitatively as expected from simulations of the...

Comparison of gamma, neutron and proton irradiations of multimode fibers

International Nuclear Information System (INIS)

Gingerich, M.E.; Dorsey, K.L.; Askins, C.G.; Friebele, E.J.

1987-01-01

The effects of pure gamma, pure proton, and mixed neutron-gamma irradiation fields on a set of both pure and doped silica core multimode fibers have been investigated. Only slight differences are found in the radiation response of pure and doped silica core fibers exposed to gamma or mixed neutron-gamma fields, indicating that Co-60 sources can be used to simulate the effects of the mixed field (except in the case of a pure neutron environment). Although it is noted that neither mix field nor gamma sources adequately simulate the effects of proton irradiation of doped silica core fibers, a good correspondence is found in the case of the pure silica core waveguide. 13 references

Low temperature irradiation of iron, zirconium and copper by 10 to 16 MeV protons

Energy Technology Data Exchange (ETDEWEB)

Omar, A M

1978-01-01

A theoretical analysis of scattering and radiation damage parameters is carried out for 14 MeV neutrons and 10-17 MeV protons on Fe, Ni, Cu, Zr, Nb, and Au. Damage energies are computed for the interactions using both elastic and non-elastic data. The results show that proton encounters deposit a greater damage energy than 14 MeV neutrons. To examine the theoretical results, electrical resistivity measurements are undertaken for Fe, Zr and Cu irradiated at 12 to 17.5K with 10 to 16 MeV protons. Post-irradiation annealing is carried out in situ using a closed-cycle helium-cooled cryostat. Values of the resistivity damage rate are compared with values estimated from the theoretical damage-energy results. Also, the observed stage I recovery is analysed in terms of the corresponding recovery reported for electron and fast-neutron irradiations. The relation between the 16 MeV proton data and published data estimated from a fusion reactor spectrum is discussed. It is also shown that protons create a damage structure similar to a superposition of the damage structures generated by electrons and fast neutrons. The sample state of imperfection is shown to influence the induced damage state in proton irradiation.

Studies of physiology and the morphology of the cat LGN following proton irradiation

International Nuclear Information System (INIS)

Reder, Chad S.; Moyers, Michael F.; Lau, Daryl; Kirby, Michael A.

2000-01-01

Purpose: We have examined the effects of proton irradiation on the histologic and receptive field properties of thalamic relay cells in the cat visual system. The cat lateral geniculate nucleus (LGN) is a large structure with well-defined anatomical boundaries, and well-described afferent, efferent, and receptive field properties. Methods and Materials: A 1.0-mm proton microbeam was used on the cat LGN to determine short-term (3 months) and long-term (9 months) receptive field effects of irradiation on LGN relay cells. The doses used were 16-, 40-, and 60-gray (Gy). Results: Following irradiation, abnormalities in receptive field organization were found in 40- and 60-Gy short-term animals, and in all of the long-term animals. The abnormalities included 'silent' areas of the LGN where a visual response could not be evoked and other regions that had unusually large or small compound receptive fields. Histologic analysis failed to identify cellular necrosis or vascular damage in the irradiated LGN, but revealed a disruption in retinal afferents to areas of the LGN. Conclusions: These results indicate that microbeam proton irradiation can disrupt cellular function in the absence of obvious cellular necrosis. Moreover, the area and extent of this disruption increased with time, having larger affect with longer post-irradiation periods

Transformation of point defects under annealing of neutron-irradiated Si and Si:Ge

International Nuclear Information System (INIS)

Pomozov, Yu.V.; Khirunenko, L.I.; Shakhovtsev, V.I.; Yashnik, V.I.

1990-01-01

Transformation of point radiation defects under isochronous annealing of neurton-irradaited Si and Si:Ge is studied. It is determined, that occurence of several new centers which produce A-centre range absorption bands is observed at annealing within 423-493 K temperature range. It is shown that vacancy and oxygen are included in the centers composition. It is found that VO centre transformation into VO 2 at annealing occurs via intermediate stage in contrast to that occuring in electron-irradiated crystals via VO direct diffusion to interstitial oxygen. Transformation of centers under Si ansd Si:Ge annealing occurs similarly

Development of over-production strain of saccharification enzyme and biomass pretreatment by proton beam irradiation

International Nuclear Information System (INIS)

Kim, S. O.; Lee, J. Y.; Song, Y. S.; Shin, H. S.

2009-04-01

- The first year : Pre-treatment of biomass by proton beam irradiation and characterization of the pretreated biomass by IR and SEM - The second year : Strain development by proton beam irradiation for the production of cellulase and hemicellulase - The third year : Optimization of Saccharification process by cellulase and hemicellulase

Ion irradiation effects on the matrix phase of SiCf/SiC composites prepared by the whisker growing assisted CVI process

International Nuclear Information System (INIS)

Park, Kyeong Hwan; Park, Ji Yeon; Kang, Suk Min; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog

2005-01-01

SiC f /SiC composites are one of promising candidates for structural material of the next generation energy system such as GFR and fusion reactors. A number of fabrication methods have been studied for obtaining an outstanding SiC f /SiC composite with a high density, high crystallinity and purity. SiC f /SiC composites consisted of whisker-reinforced matrix have a great potential at the viewpoint both of the fabrication process and the mechanical properties. SiC whiskers formed between SiC fibers improve the densification of SiC matrix during CVI process. In addition, the reinforced whiskers would be likely to enhance the mechanical properties of matrix and SiC f /SiC composite. While there has been significant developmental work on manufacturing the SiC f /SiC composite by the whisker growing assisted CVI process, detailed understanding of what effects the complex in the operating conditions combined with realistic materials property data is not adequately understood. Especially, its irradiation effects are even less clear and not well understood. A method of charged-particle irradiation is the most important R and D topics for simulating the core conditions of the advanced nuclear systems. Many studies on radiation effects of SiC and SiC f /SiC composites using a method of ion irradiation have in progress for R and D of the advanced nuclear systems. In this present work, changes of the mechanical property of SiC whisker-reinforced matrix in SiC f /SiC composite were evaluated by means of the depth sensing indentation method before and after chargedparticle irradiation

The development of MEMS device packaging technology using proton beam

International Nuclear Information System (INIS)

Hyeon, J. W.; Kong, Y. J.; Kim, E. H.; Kim, H. S.; No, S. J.

2006-05-01

Wafer-bonding techniques are key issues for the commercialization of MEMS(MicroElectroMechanical Systems) devices. The anodic bonding method and the wafer direct-bonding method are well-known major techniques for wafer bonding. Due to the anodic bonding method includes high voltage processes above 1.5 kV, the MEMS devices can be damaged during the bonding process or malfunctioned while long-term operation. On the other hand, since the wafer direct-bonding method includes a high temperature processes above 1000 .deg. C, temperature-sensitive materials and integrated circuits will be damaged or degraded during the bonding processes. Therefore, high-temperature bonding processes are not applicable for fabricating or packaging devices where temperature-sensitive materials exist. During the past few years, much effort has been undertaken to find a reliable bonding process that can be conducted at a low temperature. Unfortunately, these new bonding processes depend highly on the bonding material, surface treatment and surface flatness. In this research, a new packaging method using proton beam irradiation is proposed. While the energy loss caused in an irradiated material by X-rays or electron beams decreases with the surface distance, the energy loss caused by proton beams has a maximum value at the Bragg peak. Thus, the localized energy produced at the Bragg peak of the proton beams can be used to bond pyrex glass on a silicon wafer, so the MEMS damage is expected to be minimized. The localized heating caused by as well as the penetration depth, or the proton beam has been investigated. The energy absorbed in a stack of pyrex glass/silicon wafers due to proton-beam irradiation was numerically calculated for various proton energies by using the SRIM program. The energy loss was shown to be sufficiently localized at the interface between the pyrex glass and the silicon wafer. Proton beam irradiation was performed in the common environment of room temperature and

IRRAD: The New 24GeV/c Proton Irradiation Facility at CERN

CERN Document Server

Gkotse, Blerina; Moll, Michael; Ravotti, Federico

2016-01-01

The proton and mixed-field irradiation facilities at the CERN PS East Area (known as IRRAD1 and IRRAD2), have been heavily exploited for irradiation of particle detectors, electronic components and materials since 1992. With the increasing demand of irradiation experiments, and in view of the High-Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC), these facilities suffered of a number of unpleasant restrictions such as the space availability, the maximum achievable particle flux and several access constraints. In the framework of the AIDA project, an upgrade of these facilities was carried out during the Long Shutdown 1 (LS1) of the CERN accelerator complex. The new combined East Area IRRADiation facility (EA-IRRAD) started the commissioning in October 2014. While the new proton facility (IRRAD) continue to be mainly devoted to the radiation hardness studies for the High Energy Physics community, the new mixed-field facility (CHARM) mainly hosts irradiation experiments for the validation of electr...

Effects of DD and DT neutron irradiation on some Si devices for fusion diagnostics

International Nuclear Information System (INIS)

Tanimura, Y.; Iida, T.

1998-01-01

In order to examine the difference in the irradiation effects on Si devices between DT and DD neutrons, CCD image sensors, memory ICs and a Si detector were irradiated with neutrons from a deuteron accelerator. The transient effects (i.e. neutron-induced background noises) and permanent effects (i.e. neutron damage) on them were in situ measured during irradiation. Regarding the transient effects, brightening spot noises, soft-error upsets and induced-charge noises were measured for the CCDs, memory ICs and Si detector, respectively. As for the permanent effect, the number of damaged cells of the CCDs and the leakage current of the Si detector increased with neutron fluence. Also we developed a Monte-Carlo code with the TRIM code to evaluate the correlation of DT and DD neutron effects on Si devices. The calculated correlation factor of DT and DD neutron damage for Si devices agreed approximately with the correlation factor obtained from the irradiation experiments on the CCDs and Si detector. (orig.)

Effects of DD and DT neutron irradiation on some Si devices for fusion diagnostics

Science.gov (United States)

Tanimura, Yoshihiko; Iida, Toshiyuki

1998-10-01

In order to examine the difference in the irradiation effects on Si devices between DT and DD neutrons, CCD image sensors, memory ICs and a Si detector were irradiated with neutrons from a deuteron accelerator. The transient effects (i.e. neutron-induced background noises) and permanent effects (i.e. neutron damage) on them were in situ measured during irradiation. Regarding the transient effects, brightening spot noises, soft-error upsets and induced-charge noises were measured for the CCDs, memory ICs and Si detector, respectively. As for the permanent effect, the number of damaged cells of the CCDs and the leakage current of the Si detector increased with neutron fluence. Also we developed a Monte-Carlo code with the TRIM code to evaluate the correlation of DT and DD neutron effects on Si devices. The calculated correlation factor of DT and DD neutron damage for Si devices agreed approximately with the correlation factor obtained from the irradiation experiments on the CCDs and Si detector.

Internal friction measurements of Mo after low-temperature proton irradiation

International Nuclear Information System (INIS)

Tanimoto, H.; Mizubayashi, H.; Masuda, R.; Okuda, S.; Tagishi, Y.

1992-01-01

Internal friction measurements are performed in Mo after 20 MeV proton irradiation in order to clarify the behavior of self-interstitial atoms (SIA's) in Mo. In the low dose range, strong dislocation pinning suggesting the free migration of defects is observed at about 40 K and weak pinning at about 25 K. The features are very similar to those reported after neutron irradiation except that the 25 K pinning is much smaller after proton irradiation. The result suggests that the migration of free SIA's is responsible for the 40 K pinning and that of SIA-defect clusters, probably di-SIA's, formed during irradiation for the 25 K pinning. In the high dose range, the relaxation peaks are observed at about 13 and 41 K, where the close similarities are found between the present peaks and the corresponding peaks reported after neutron irradiation except that the peak height of the 41 K peak per unit concentration of Frenkel pairs (FP) tends to increase strongly with decreasing dose here. The latter fact suggests the strong interaction between SIA's. Then the smallness of the 41 K peak reported after electron irradiation with very high dose could be explained by an increased interaction between SIA's, but not by the two-dimensional migration of SIA's as proposed by Jacques and Robrock. Deformation given prior to irradiation causes a drastic decrease in the modulus defects associated with FP's (so-called bulk effect) and in the 13 K peak height. After neutron irradiation, no such effect of deformation was reported. A possible origin for this difference is discussed. (orig.)

Defects in electron irradiated vitreous SiO2 probed by positron annihiliation

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro; Kawano, Takao; Itoh, Hisayoshi

1994-01-01

Defects in 3 MeV electron irradiated vitreous SiO 2 (v-SiO 2 ) were probed by the positron annihilation technique. For unirradiated v-SiO 2 specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author)

Disorder accumulation and recovery in gold-ion irradiated 3C-SiC

Energy Technology Data Exchange (ETDEWEB)

Jiang, Weilin; Weber, William J.; Lian, Jie; Kalkhoran, N. M.

2009-01-12

A single-crystal 3C-SiC film on the Si/SiO2/Si (SIMOX) substrate was irradiated in different areas at 156 K with Au2+ ions to low fluences. The disorder profiles as a function of dose on both the Si and C sublattices have been determined in situ using a combination of 0.94 MeV D+ Rutherford backscattering spectrometry and nuclear reaction analysis in channeling geometry along the <100>, <110> and <111> axes. The results indicate that for the same damage state, the level of disorder on the Si sublattice in 3C-SiC follows a decreasing order along the <111>, <100> and <110> axes, while that on the C sublattice shows comparable values. Similar levels of Si and C disorder are observed along the <111> axis over the applied dose range. However, the level of C disorder is higher than that of Si disorder along either <100> or <110>. The amount of disorder recovery during thermal annealing processes depends on the sublattice (Si or C) and crystallographic orientation. Room-temperature recovery occurs for both sublattices in 3C-SiC irradiated to a dose of 0.047 dpa or lower. Significant recovery is observed along all directions during thermal annealing at 600 K. The results will be discussed and compared to those for 6H- and 4H-SiC under similar irradiation conditions.

Development of abiotic-stress resistant warm season trufgrasses by proton-beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Seo, Y. W.; Kim, J. Y.; Jeong, S. H. [Korea Univ., Seoul (Korea, Republic of)

2007-04-15

The direct use of mutation is a valuable approach to generate genetic variation in crop species by altering agronomically useful major traits. The proton beam, as a mutagen, was applied to improve resistance traits of Zoysia grass under various abiotic stresses. Proton beam was irradiated to mature dry seeds of Zenith (Zoysia grass), which is well-adapted to Korean climate, using a proton- accelerator with seven different doses (50, 100, 150, 200, 250, 300, 400 Gy). Individual seedling of M1 plant was transplanted from the seed bed and allowed to reach appropriate plant mass. Clones that showed superior growth were chosen and transplanted to pots for further clone propagation and field evaluation. Growth characteristics of turfgrass, such as plant height, leaf length, leaf width, number of tiller were evaluated ninety days after sowing. Although large variation within each dose, noticeable differences were found among different irradiated doses. Most of the mutant clones derived from the irradiation treatment showed more vigorous growth than the control plants. RAPD (Random Amplified Polymorphic DNA) and AFLP (Amplified Fragment Length Polymorphism) methods were conducted to analyze genomic variations associated with proton beam irradiation. In order to establish selection criteria for selection of salt-stress resistance plants, an in vitro method that is able to select salt-stress resistant mutants in liquid media without ambient disturbances. Total 647 predominance clones that were considered as abiotic stress resistant mutants were transplanted to the field for further evaluation.

Energy Dependence of Proton Radiation Damage in Si-Sensors

CERN Document Server

AUTHOR|(CDS)2084399; Neubüser, C.

2014-01-01

Irradiation experiments on silicon sensors are used to mimic the radiation environment at collider experiments with the aim to forecast the change of the electrical properties of a detector with irradiation. Measurements on irradiated sensors are invaluable in choosing a material well suited for a silicon tracking detector. This is especially true for the upgraded detectors to be used in the high-luminosity phase of the LHC (HL-LHC), where silicon sensors as currently used would suffer severe loss in signal from irradiation with charged and neutral hadrons.\\\\ The CMS Tracker Collaboration has initiated irradiation studies with protons with energies ranging from 23 MeV to 23 GeV. They are often used instead of charged hadrons, their radiation induced damage to the silicon being rather similar. However, in oxygen rich silicon, NIEL violation concerning the full depletion voltage has been observed.\\\\ In this paper results from investigations on bulk defects compared to the change of the electrical properties of ...

Influence of neutron irradiation on etching of SiC in KOH

Science.gov (United States)

Mokhov, E. N.; Kazarova, O. P.; Soltamov, V. A.; Nagalyuk, S. S.

2017-07-01

The effect of reactor neutron irradiation on the etch rate of SiC in potassium hydroxide has been studied. In the case of high irradiation doses (1019-1021 cm-2), the etch rate of silicon carbide has been shown to drastically rise, especially in the [0001]Si direction. This considerably mitigates the orientation anisotropy of polar face etching. After high-temperature annealing (up to 1200-1400°C), a higher etch rate of irradiated crystals persists. The results have been explained by the high concentration of radiation-induced (partially clustered) defects they contain.

Response of thyroid follicular cells to gamma irradiation compared to proton irradiation. I. Initial characterization of DNA damage, micronucleus formation, apoptosis, cell survival, and cell cycle phase redistribution

Science.gov (United States)

Green, L. M.; Murray, D. K.; Bant, A. M.; Kazarians, G.; Moyers, M. F.; Nelson, G. A.; Tran, D. T.

2001-01-01

The RBE of protons has been assumed to be equivalent to that of photons. The objective of this study was to determine whether radiation-induced DNA and chromosome damage, apoptosis, cell killing and cell cycling in organized epithelial cells was influenced by radiation quality. Thyroid-stimulating hormone-dependent Fischer rat thyroid cells, established as follicles, were exposed to gamma rays or proton beams delivered acutely over a range of physical doses. Gamma-irradiated cells were able to repair DNA damage relatively rapidly so that by 1 h postirradiation they had approximately 20% fewer exposed 3' ends than their counterparts that had been irradiated with proton beams. The persistence of free ends of DNA in the samples irradiated with the proton beam implies that either more initial breaks or a quantitatively different type of damage had occurred. These results were further supported by an increased frequency of chromosomal damage as measured by the presence of micronuclei. Proton-beam irradiation induced micronuclei at a rate of 2.4% per gray, which at 12 Gy translated to 40% more micronuclei than in comparable gamma-irradiated cultures. The higher rate of micronucleus formation and the presence of larger micronuclei in proton-irradiated cells was further evidence that a qualitatively more severe class of damage had been induced than was induced by gamma rays. Differences in the type of damage produced were detected in the apoptosis assay, wherein a significant lag in the induction of apoptosis occurred after gamma irradiation that did not occur with protons. The more immediate expression of apoptotic cells in the cultures irradiated with the proton beam suggests that the damage inflicted was more severe. Alternatively, the cell cycle checkpoint mechanisms required for recovery from such damage might not have been invoked. Differences based on radiation quality were also evident in the alpha components of cell survival curves (0.05 Gy(-1) for gamma rays, 0

Observations of defect structure evolution in proton and Ni ion irradiated Ni-Cr binary alloys

Energy Technology Data Exchange (ETDEWEB)

Briggs, Samuel A., E-mail: sabriggs2@wisc.edu [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Barr, Christopher M. [Drexel University, 3141 Chestnut Street, Philadelphia, PA 19104 (United States); Pakarinen, Janne [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); SKC-CEN Belgian Nuclear Research Centre, Boeretang 200, B-2400 Mol (Belgium); Mamivand, Mahmood [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Hattar, Khalid [Sandia National Laboratories, PO Box 5800, Albuquerque, NM 87185 (United States); Morgan, Dane D. [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Taheri, Mitra [Drexel University, 3141 Chestnut Street, Philadelphia, PA 19104 (United States); Sridharan, Kumar [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States)

2016-10-15

Two binary Ni-Cr model alloys with 5 wt% Cr and 18 wt% Cr were irradiated using 2 MeV protons at 400 and 500 °C and 20 MeV Ni{sup 4+} ions at 500 °C to investigate microstructural evolution as a function of composition, irradiation temperature, and irradiating ion species. Transmission electron microscopy (TEM) was applied to study irradiation-induced void and faulted Frank loops microstructures. Irradiations at 500 °C were shown to generate decreased densities of larger defects, likely due to increased barriers to defect nucleation as compared to 400 °C irradiations. Heavy ion irradiation resulted in a larger density of smaller voids when compared to proton irradiations, indicating in-cascade clustering of point defects. Cluster dynamics simulations were in good agreement with the experimental findings, suggesting that increases in Cr content lead to an increase in interstitial binding energy, leading to higher densities of smaller dislocation loops in the Ni-18Cr alloy as compared to the Ni-5Cr alloy. - Highlights: • Binary Ni-Cr alloys were irradiated with protons or Ni ions at 400 and 500 °C. • Higher irradiation temperatures yield increased size, decreased density of defects. • Hypothesize that varying Cr content affects interstitial binding energy. • Fitting CD models for loop nucleation to data supports this hypothesis.

Gamma and electron beam irradiation effects on SiR-EPDM blends

Directory of Open Access Journals (Sweden)

R. Deepalaxmi

2014-07-01

Full Text Available Ethylene Propylene Diene Monomer (EPDM is widely used as Cable Insulation Material (CIM due to its good mechanical strength. Silicone Rubber (SiR is used in high temperature environments due to its good di-electric properties/hydrophobicity. The blending of SiR-EPDM may result in the improvement in their specific properties. The SiR-EPDM blend of equal composition (50:50 was prepared. When such blends are used as Cable Insulation Materials (CIM, they should perform their safety functions throughout their installed life in Nuclear Power Plants (NPP. The CIM will be exposed to Gamma irradiation at the installed locations. The short time accelerated testing was carried out, in order to forecast long-term performance of CIM. Electron beam irradiation is widely used in cable manufacturing industries to improve the performance of the polymeric materials. In the current study, on the purpose to investigate the effect of gamma/electron beam irradiation on the 50–50 composition of SiR-EPDM blend, blend was exposed to 25 Mrad dose of gamma/electron beam irradiation. The electrical and mechanical parameters like Volume Resistivity (VRY, Surface Resistivity (SRY, Tensile Strength (TS, Elongation at Break (EB, Hardness (H of the virgin, gamma/electron beam irradiated blends were determined as per ASTM/IEC standards. The nature of degradation was investigated using Fourier Transform Infrared Spectroscopy (FTIR. To determine the elemental composition of the materials at the surface, Energy Dispersive X-ray Analysis (EDAX has been done. Scanning Electron Microscopy (SEM analysis has been done to study the morphological changes. The occurrence of cross-linking is found to be the mechanism for ageing in gamma/electron beam irradiated SiR-EPDM blends.

Fission product Pd-SiC interaction in irradiated coated particle fuels

International Nuclear Information System (INIS)

Tiegs, T.N.

1980-04-01

Silicon carbide is the main barrier to fission product release from coated particle fuels. Consequently, degradation of the SiC must be minimized. Electron microprobe analysis has identified that palladium causes corrosion of the SiC in irradiated coated particles. Further ceramographic and electron microprobe examinations on irradiated particles with kernels ranging in composition from UO 2 to UC 2 , including PuO/sub 2 -x/ and mixed (Th, Pu) oxides, and in enrichment from 0.7 to 93.0% 235 U revealed that temperature is the major factor affecting the penetration rate of SiC by Pd. The effects of kernel composition, Pd concentration, other fission products, and SiC properties are secondary

Proteomic analysis of proton beam irradiated human melanoma cells.

Directory of Open Access Journals (Sweden)

Sylwia Kedracka-Krok

Full Text Available Proton beam irradiation is a form of advanced radiotherapy providing superior distributions of a low LET radiation dose relative to that of photon therapy for the treatment of cancer. Even though this clinical treatment has been developing for several decades, the proton radiobiology critical to the optimization of proton radiotherapy is far from being understood. Proteomic changes were analyzed in human melanoma cells treated with a sublethal dose (3 Gy of proton beam irradiation. The results were compared with untreated cells. Two-dimensional electrophoresis was performed with mass spectrometry to identify the proteins. At the dose of 3 Gy a minimal slowdown in proliferation rate was seen, as well as some DNA damage. After allowing time for damage repair, the proteomic analysis was performed. In total 17 protein levels were found to significantly (more than 1.5 times change: 4 downregulated and 13 upregulated. Functionally, they represent four categories: (i DNA repair and RNA regulation (VCP, MVP, STRAP, FAB-2, Lamine A/C, GAPDH, (ii cell survival and stress response (STRAP, MCM7, Annexin 7, MVP, Caprin-1, PDCD6, VCP, HSP70, (iii cell metabolism (TIM, GAPDH, VCP, and (iv cytoskeleton and motility (Moesin, Actinin 4, FAB-2, Vimentin, Annexin 7, Lamine A/C, Lamine B. A substantial decrease (2.3 x was seen in the level of vimentin, a marker of epithelial to mesenchymal transition and the metastatic properties of melanoma.

Proton and photon absorbed-dose conversion coefficients for embryo and foetus from top-down irradiation geometry

International Nuclear Information System (INIS)

Chen, J.

2007-01-01

Absorbed-dose conversion coefficients are calculated for the embryo of 8 weeks and the foetus of 3, 6 or 9 months when the mother's body is exposed to protons and photons from top-down (TOP) direction. It provides data sets in addition to other standard irradiation geometries published previously. The TOP-irradiation geometry is considered here, because high-energy particles are often peaked from the TOP direction onboard aircraft. The results show that absorbed-doses from high-energy particles could be underestimated significantly if isotropic (ISO) irradiation geometry is assumed. For protons of 100 GeV, absorbed-doses from TOP irradiation are ∼2.3-2.9 times higher than the doses from ISO irradiation for different foetal ages. For 10 GeV photons, foetal doses from TOP irradiation are ∼6.8-12 times higher than the doses from ISO irradiation. The coefficients from TOP-irradiation geometry are given in wide energy ranges, from 100 MeV to 100 GeV for protons and from 50 V to 10 GeV for photons. They can, therefore, be used in various applications whenever exposure from the TOP-irradiation direction is concerned. (authors)

Self-irradiation damage in 4H-SiC by molecular dynamics simulation

International Nuclear Information System (INIS)

Han Miaomiao; Wang Qingyu; Li Taosheng; Li Zhongyu

2014-01-01

The development of nuclear technology is closely and inseparably related to the improvements of materials irradiation performance. The irradiation damage of nuclear materials is an important issue of characteristics and difficulties. Because of the excellent features, SiC becomes one of the candidate materials for the cladding material and structure material in fast neutron reactor and fusion reactor. As one of the polytypes, 4H-SiC has prospective important applications in a strong irradiation environment. In this work, molecular dynamics (MD) simulation was performed to study the irradiation-induced cascade damage in single-crystalline 4H-SiC to get the microscopic evolution during the irradiation, in the aim of getting access to the detail that we cannot get from experiments. The software LAMMPS was used to simulate the damage formation process and the recovery process. The results showed that the initial project direction, the temperature and PKA energy exerted significant effects on the number and morphology of defects. (authors)

Maskless proton beam writing in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

2007-07-15

Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

Maskless proton beam writing in gallium arsenide

International Nuclear Information System (INIS)

Mistry, P.; Gomez-Morilla, I.; Smith, R.C.; Thomson, D.; Grime, G.W.; Webb, R.P.; Gwilliam, R.; Jeynes, C.; Cansell, A.; Merchant, M.; Kirkby, K.J.

2007-01-01

Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

Proton Beam Writing

International Nuclear Information System (INIS)

Rajta, I.; Szilasi, S.Z.; Csige, I.; Baradacs, E.

2005-01-01

Complete text of publication follows. Refractive index depth profile in PMMA due to proton irradiation Proton Beam Writing has been successfully used to create buried channel waveguides in PMMA, which suggested that proton irradiation increases the refractive index. To investigate this effect, PMMA samples were irradiated by 1.7-2.1 MeV proton beam. Spectroscopic Ellipsometry has been used to investigate the depth profile of the refractive index. An increase of the refractive index was observed in the order of 0.01, which is approximately one order of magnitude higher than the detection limit. The highest increase of the refractive index occurs at the end of range, i.e. we found a good correlation with the Bragg curve of the energy loss. Hardness changes in PMMA due to proton beam micromachining As protons penetrate a target material and lose their energy according to the Bragg curve, the energy loss is different at different depths. This causes depth-dependent changes of some physical properties in the target material (e.g. refractive index, hardness). In order to characterize the changes of hardness and other mechanical properties as a function of beam penetration depth, systematic investigations have been performed on PMMA, the most common resist material used in proton beam micromachining. Silicon check valve made by proton beam micromachining The possible application of Proton Beam Micromachining (PBM) has been demonstrated by a few authors for creating 3D Si microstructures. In this work we present alternative methods for the formation of a simple a non-return valve for microfluidic applications. Two different approaches have been applied, in both cases we exploited characteristic features of the PBM technique and the selective formation and dissolution of porous Si over the implantation damaged areas. In the first case we implanted 10 μm thick cantilever-type membrane of the valve normally to the crystal surface and at 30-60 degrees to the sidewalls of the

Excited states above the proton threshold in {sup 26}Si

Energy Technology Data Exchange (ETDEWEB)

Komatsubara, T. [Institute for Basic Science (IBS), Rare Isotope Science Project, Yuseong-gu Daejeon (Korea, Republic of); Kubono, S.; Ito, Y. [RIKEN, Saitama (Japan); Hayakawa, T.; Shizuma, T. [Japan Atomic Energy Agency, Tokai, Ibaraki (Japan); Ozawa, A.; Ishibashi, Y. [University of Tsukuba, Institute of Physics, Tsukuba, Ibaraki (Japan); Moriguchi, T. [National Cerebral and Cardiovascular Center Research Institute, Suita, Osaka (Japan); Yamaguchi, H.; Kahl, D. [University of Tokyo, Wako Branch, Center for Nuclear Study (CNS), Wako, Saitama (Japan); Hayakawa, S. [Laboratori Nazionali del Sud-INFN, Catania (Italy); Nguyen Binh, Dam [Vietnamese Academy for Science and Technology, Institute of Physics, Hanoi (Viet Nam); Chen, A.A.; Chen, J. [McMaster University, Hamilton, Ontario (Canada); Setoodehnia, K. [University of Notre Dame, Department of Physics, Notre Dame, Indiana (United States); Kajino, T. [National Astronomical Observatory, Tokyo (Japan); University of Tokyo, Department of Astronomy, Graduate School of Science, Tokyo (Japan)

2014-09-15

The level scheme above the proton threshold in {sup 26}Si is crucial for evaluating the {sup 25}Al(p, γ){sup 26}Si stellar reaction, which is important for understanding the astrophysical origin of the long-lived cosmic radioactivity {sup 26}Al(T{sub 1/2} = 7.17 x 10{sup 5} y) in the Galaxy. The excited states in {sup 26}Si have been studied using an in-beam γ-ray spectroscopy technique with the {sup 24}Mg({sup 3}He, nγ){sup 26}Si reaction. γ-rays with energies up to 4.6 MeV emitted from excited states in {sup 26}Si have been measured using large volume HPGe detectors. The spin-parity of one of the most important states reported recently at 5890.0keV has been assigned as 0{sup +} by γ-γ angular correlation measurements in this work. (orig.)

Evolving role of hadron irradiation: Potential and risks of hadrons heavier than protons

International Nuclear Information System (INIS)

Levy, Richard P.

2007-01-01

Proton irradiation has been developed to achieve the clinical benefit of improved 3D-dose distribution, with biological properties similar to X-rays. Neutron irradiation, though much less 3D-conformal than proton treatment, has been developed to take advantage of increased relative biologic effectiveness (RBE). Irradiation with hadrons heavier than protons (e.g. carbon and neon ions) exhibits the unique combination of improved 3D-dose distribution and increased RBE. The synchrotron technology is rapidly developing to improve the efficiency of delivering these heavier hadrons clinically, but important issues remain regarding optimization of dose and fractionation parameters in the treatment of various histopathologies located in different portions of the anatomy. Many laboratory animal and in vitro cellular studies, and some clinical studies, have been performed to enable better understanding of how to adjust dose-fractionation selection to improve the therapeutic ratio of tumor-cell kill to normal-tissue injury. This paper highlights the enhanced therapeutic potential and associated risks of treatment with these heavier hadrons

A simple irradiation facility for radiobiological experiments with low energy protons from a cyclotron

International Nuclear Information System (INIS)

Mukherjee, B.

1982-01-01

An experimental facility for irradiation of small biological targets with low-energy protons has been developed. The depth-dose distribution in soft-tissue is calculated from the proton energy spectrum. (orig.)

Proton microbeam irradiation effects on PtBA polymer

Indian Academy of Sciences (India)

Microbeam irradiation effects on poly-tert-butyl-acrylate (PtBA) polymer using 2.0 MeV proton microbeam are reported. Preliminary results on pattern formation on PtBA are carried out as a function of fluence. After writing the pattern, a thin layer of Ge is deposited. Distribution of Ge in pristine and ion beam patterned surface ...

X-ray diffraction studies of 145MeV proton-irradiated AlBeMet 162

Directory of Open Access Journals (Sweden)

Mohamed Elbakhshwan

2016-08-01

Full Text Available AlBeMet 162 (Materion Co., formerly Brush Wellman has been irradiated with 145MeV protons up to 1.2×1020cm−2 fluence, with irradiation temperatures in the range of 100–220°C. Macroscopic post-irradiation evaluation on the evolution of mechanical and thermal properties was integrated with a comprehensive X-ray- diffraction study using high-energy monochromatic and polychromatic X-ray beams, which offered a microscopic view of the irradiation damage effects on AlBeMet. The study confirmed the stability of the metal–matrix composite, its resistance to proton damage, and the continuing separation of the two distinct phases, fcc aluminum and hcp beryllium, following irradiation. Furthermore, based on the absence of inter-planar distance change during proton irradiation, it was confirmed that the stacking faults and clusters on the Al (111 planes are stable, and thus can migrate from the cascade region and be absorbed at various sinks. XRD analysis of the unirradiated AlBeMet 162 showed clear change in the texture of the fcc phase with orientation especially in the Al (111 reflection which exhibits a “non-perfect” six-fold symmetry, implying lack of isotropy in the composite.

MO-FG-CAMPUS-JeP1-03: Luminescence Imaging of Water During Proton Beam Irradiation for Range Estimation

International Nuclear Information System (INIS)

Yamamoto, S; Komori, M; Toshito, T; Watabe, H

2016-01-01

Purpose: Since proton therapy has the ability to selectively deliver a dose to a target tumor, the dose distribution should be accurately measured. A precise and efficient method to evaluate the dose distribution is desired. We found that luminescence was emitted from water during proton irradiation and thought this phenomenon could be used for estimating the dose distribution. Methods: For this purpose, we placed water phantoms set on a table with a spot-scanning proton-therapy system, and luminescence images of these phantoms were measured with a high-sensitivity cooled charge coupled device (CCD) camera during proton-beam irradiation. We also conducted the imaging of phantoms of pure-water, fluorescein solution and acrylic block. We made three dimensional images from the projection data. Results: The luminescence images of water phantoms during the proton-beam irradiations showed clear Bragg peaks, and the measured proton ranges from the images were almost the same as those obtained with an ionization chamber. The image of the pure-water phantom also showed almost the same distribution as the tap-water phantom, indicating that the luminescence image was not related to impurities in the water. The luminescence image of fluorescein solution had ∼3 times higher intensity than water, with the same proton range as that of water. The luminescence image of the acrylic phantom had 14.5% shorter proton range than that of water; the proton range in the acrylic phantom was relatively matched with the calculated value. The luminescence images of the tap-water phantom during proton irradiation could be obtained in less than 2 sec. Three dimensional images were successfully obtained which have more quantitative information. Conclusion: Luminescence imaging during proton-beam irradiation has the potential to be a new method for range estimations in proton therapy.

MO-FG-CAMPUS-JeP1-03: Luminescence Imaging of Water During Proton Beam Irradiation for Range Estimation

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, S; Komori, M [Nagoya University, Nagoya, Aichi (Japan); Toshito, T [Nagoya Proton Therapy Center, Nagoya, Aichi (Japan); Watabe, H [Tohoku University, Sendai, Miyagi (Japan)

2016-06-15

Purpose: Since proton therapy has the ability to selectively deliver a dose to a target tumor, the dose distribution should be accurately measured. A precise and efficient method to evaluate the dose distribution is desired. We found that luminescence was emitted from water during proton irradiation and thought this phenomenon could be used for estimating the dose distribution. Methods: For this purpose, we placed water phantoms set on a table with a spot-scanning proton-therapy system, and luminescence images of these phantoms were measured with a high-sensitivity cooled charge coupled device (CCD) camera during proton-beam irradiation. We also conducted the imaging of phantoms of pure-water, fluorescein solution and acrylic block. We made three dimensional images from the projection data. Results: The luminescence images of water phantoms during the proton-beam irradiations showed clear Bragg peaks, and the measured proton ranges from the images were almost the same as those obtained with an ionization chamber. The image of the pure-water phantom also showed almost the same distribution as the tap-water phantom, indicating that the luminescence image was not related to impurities in the water. The luminescence image of fluorescein solution had ∼3 times higher intensity than water, with the same proton range as that of water. The luminescence image of the acrylic phantom had 14.5% shorter proton range than that of water; the proton range in the acrylic phantom was relatively matched with the calculated value. The luminescence images of the tap-water phantom during proton irradiation could be obtained in less than 2 sec. Three dimensional images were successfully obtained which have more quantitative information. Conclusion: Luminescence imaging during proton-beam irradiation has the potential to be a new method for range estimations in proton therapy.

Damage effects and mechanisms of proton irradiation on methyl silicone rubber

International Nuclear Information System (INIS)

Zhang, L.X.; He, Sh.Y.; Xu, Zh.; Wei, Q.

2004-01-01

A study was performed on the damage effects and mechanisms of proton irradiation with 150 keV energy to space-grade methyl silicone rubber. The changes in surface morphology, mechanical properties, infrared attenuated total reflection (ATR) spectrum, mass spectrum and pyrolysis gas chromatography-mass spectrum (PYGC-MS) indicated that, under lower fluence, the proton radiation would induce cross-linking effect, resulting in an increase in tensile strengths and hardness of the methyl silicon rubber. However, under higher proton fluence, the radiation-induced degradation, which decreased the tensile strengths and hardness, became a dominant effect. A macromolecular-network destruction model for the silicone rubber radiated with the protons was proposed

The effect of irradiation on the stability and properties of monolithic silicon carbide and SiCf/SiC composites up to 25 dpa

International Nuclear Information System (INIS)

Hollenberg, G.W.; Henager, C.H. Jr.; Youngblood, G.E.; Trimble, D.J.; Simonson, S.A.; Newsome, G.A.; Lewis, E.

1994-04-01

Stability and properties of monolithic and SiC f /SiC composites were measured before and after irradiation in a fast neutron spectrum up to 25 dpa between 500 and 1500C. Dimensional changes were relatively consistent with previous investigations. Strength and modulus of SiC f /SiC composites decreased after irradiation as a result of fiber/matrix decoupling. For some composites, uniform elongation was not significantly degraded by irradiation. Thermal conductivity also decreased after irradiation at low temperatures because of the introduction of lattice defects as phonon scattering sites. Retention of properties under the severe conditions of 25 dpa and 800C suggests that a composite tailored for neutron damage resistance can be developed

Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

Science.gov (United States)

Meier, D.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Manfredi, P. F.; Marshall, R. D.; Mishina, M.; Le Normand, F.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-04-01

CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/ c and 500 Mev protons up to a fluence of 5×10 15 p/cm 2. We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1×10 15 p/cm 2 and decreases by ≈40% at 5×10 15 p/cm 2. Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/ c and 500 MeV protons up to at least 1×10 15p/cm 2 without signal loss.

Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

International Nuclear Information System (INIS)

Meier, D.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Manfredi, P.F.; Marshall, R.D.; Mishina, M.; Le Normand, F.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.

1999-01-01

CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/c and 500 Mev protons up to a fluence of 5x10 15 p/cm 2 . We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1x10 15 p/cm 2 and decreases by ∼40% at 5x10 15 p/cm 2 . Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/c and 500 MeV protons up to at least 1x10 15 p/cm 2 without signal loss

Supine craniospinal irradiation in pediatric patients by proton pencil beam scanning.

Science.gov (United States)

Farace, Paolo; Bizzocchi, Nicola; Righetto, Roberto; Fellin, Francesco; Fracchiolla, Francesco; Lorentini, Stefano; Widesott, Lamberto; Algranati, Carlo; Rombi, Barbara; Vennarini, Sabina; Amichetti, Maurizio; Schwarz, Marco

2017-04-01

Proton therapy is the emerging treatment modality for craniospinal irradiation (CSI) in pediatric patients. Herein, special methods adopted for CSI at proton Therapy Center of Trento by pencil beam scanning (PBS) are comprehensively described. Twelve pediatric patients were treated by proton PBS using two/three isocenters. Special methods refer to: (i) patient positioning in supine position on immobilization devices crossed by the beams; (ii) planning field-junctions via the ancillary-beam technique; (iii) achieving lens-sparing by three-beams whole-brain-irradiation; (iv) applying a movable-snout and beam-splitting technique to reduce the lateral penumbra. Patient-specific quality assurance (QA) program was performed using two-dimensional ion chamber array and γ-analysis. Daily kilovoltage alignment was performed. PBS allowed to obtain optimal target coverage (mean D98%>98%) with reduced dose to organs-at-risk. Lens sparing was obtained (mean D1∼730cGyE). Reducing lateral penumbra decreased the dose to the kidneys (mean Dmean4cm (mean γ>95%) than at depths<4cm. The reported methods allowed to effectively perform proton PBS CSI. Copyright © 2017 Elsevier B.V. All rights reserved.

Comparison of stability of WSiX/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

International Nuclear Information System (INIS)

Kim, Jihyun; Ren, F.; Chung, G.Y.; MacMillan, M.F.; Baca, A.G.; Briggs, R.D.; Schoenfeld, D.; Pearton, S.J.

2004-01-01

SiC Schottky rectifiers with moderate breakdown voltages of ∼450 V and with either WSi X or Ni rectifying contacts were irradiated with Co-60 γ-rays to doses up to ∼315 Mrad. The Ni/SiC rectifiers show severe reaction of the contact after irradiation at the highest dose, badly degrading the forward current characteristics and increasing the on-state resistance by up to a factor of 6 after irradiation. By sharp contrast, the WSi X /SiC devices show little deterioration of the contact with the same conditions and changes in on-state resistance of X contacts appear promising for applications requiring improved contact stability

High total dose proton irradiation effects on silicon NPN rf power transistors

International Nuclear Information System (INIS)

Bharathi, M. N.; Praveen, K. C.; Prakash, A. P. Gnana; Pushpa, N.

2014-01-01

The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods

High total dose proton irradiation effects on silicon NPN rf power transistors

Energy Technology Data Exchange (ETDEWEB)

Bharathi, M. N.; Praveen, K. C.; Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, Karnataka (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025, Karnataka (India)

2014-04-24

The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods.

Medium-energy ion-beam simulation of the effect of ionizing radiation and displacement damage on SiO{sub 2}-based memristive nanostructures

Energy Technology Data Exchange (ETDEWEB)

Belov, Alexey; Mikhaylov, Alexey; Korolev, Dmitry; Guseinov, Davud; Gryaznov, Eugeny; Okulich, Eugenia; Sergeev, Victor; Antonov, Ivan; Kasatkin, Alexandr; Gorshkov, Oleg [Lobachevsky University, 23/3 Gagarin prospect, 603950 Nizhny Novgorod (Russian Federation); Tetelbaum, David, E-mail: tetelbaum@phys.unn.ru [Lobachevsky University, 23/3 Gagarin prospect, 603950 Nizhny Novgorod (Russian Federation); Kozlovski, Vitali [St. Petersburg State Polytechnic University, 29 Polytechnicheskaya street, 195251 St. Petersburg (Russian Federation)

2016-07-15

The principles of ion-beam simulation of the effect of fast (fission) neutrons and high-energy protons based on medium-energy ion irradiation have been developed for the Au/Zr/SiO{sub 2}/TiN/Ti capacitor-like memristive nanostructures demonstrating the repeatable resistive switching phenomenon. By using the Monte-Carlo approach, the irradiation fluences of H{sup +}, Si{sup +} and O{sup +} ions at the energy of 150 keV are determined that provide the ionization and displacement damage equivalent to the cases of space protons (15 MeV) and fission neutrons (1 MeV) irradiation. No significant change in the resistive switching parameters is observed under ion irradiation up to the fluences corresponding to the extreme fluence of 10{sup 17} cm{sup −2} of space protons or fission neutrons. The high-level radiation tolerance of the memristive nanostructures is experimentally confirmed with the application of 15 MeV proton irradiation and is interpreted as related to the local nature of conducting filaments and high concentration of the initial field-induced defects in oxide film.

Irradiation effects of 11 MeV protons on ferritic steels

International Nuclear Information System (INIS)

Hamaguchi, Yoshikazu; Kuwano, Hisashi; Misawa, Toshihei

1985-01-01

It is considered that ferritic/martensitic steels are the candidate of the first wall materials for future fusion reactors. The most serious problem in the candidate materials is the loss of ductility due to the elevation of ductile-brittle transition temperature by the high dpa irradiation of neutrons. 14 MeV neutrons produced by D-T reaction cause high dpa damage and also produce large quantity of helium and hydrogen atoms in first wall materials. Those gas atoms also play an important role in the embrittlement of steels. The main purpose of this work was to simulate the behavior of hydrogen produced by the transmutation in the mechanical properties of ferritic steels when they were irradiated with 11 MeV protons. The experimental procedure and the results of hardness, the broadening of x-ray diffraction lines, Moessbauer spectroscopy and small punch test are reported. High energy protons of 10 - 20 MeV are suitable to the simulation experiment of 14 MeV neutron radiation damage. But the production of the active nuclei emitting high energy gamma ray and having long life, Co-56, is the most serious problem. Another difficulty is the control of irradiation temperature. A small irradiation chamber must be developed. (Kako, I.)

Role of Si self-interstitials on the electrical de-activation of B doped

International Nuclear Information System (INIS)

Piro, A.M.; Romano, L.; Badala, P.; Mirabella, S.; Grimaldi, M.G.; Rimini, E.

2006-01-01

The off-lattice displacement of B atoms in B-doped Si induced by the irradiation with light ion beam at room temperature has been investigated. A proton beam with energy ranging from 300 to 1300 keV was used to irradiate the single crystal Si samples containing a 400 nm thick surface layer (grown by molecular beam epitaxy) uniformly doped with B at a concentration of 1 x 10 2 B/cm 3 . Channelling analyses along the axis using the 11 B(p, α) 8 Be reaction (at 650 keV proton energy) were used to detect the off-lattice displacements of B during irradiation. B is substitutional in the as-grown sample. During irradiation the normalized channelling yield of B χ B increases with the ion fluence and saturates at a value χ F smaller than unity, being this value independent of the energy of the irradiating beam. No change on the Si channelling yield was detected. The B displacement rate decreases with increasing the beam energy, it is controlled by the generation rate of Si self-interstitials, and it can be fitted by the following formula χ = χ F - [χ F - χ ] * exp(-σ * N I ), where χ is the χ of the non-irradiated sample, N I is the fluence of the Si self-interstitials generated by the irradiating beam and σ is a fitting parameter that accounts for the probability for a self-interstitial to be trapped by substitutional B. Displaced B is not randomly located in the lattice and channelling analyses indicate the formation of a B complex, mediated by B i intersticialcy diffusion mechanism, partially displaced within the channel

Proton irradiation studies on Al and Al5083 alloy

Science.gov (United States)

Bhattacharyya, P.; Gayathri, N.; Bhattacharya, M.; Gupta, A. Dutta; Sarkar, Apu; Dhar, S.; Mitra, M. K.; Mukherjee, P.

2017-10-01

The change in the microstructural parameters and microhardness values in 6.5 MeV proton irradiated pure Al and Al5083 alloy samples have been evaluated using different model based techniques of X-ray diffraction Line Profile Analysis (XRD) and microindendation techniques. The detailed line profile analysis of the XRD data showed that the domain size increases and saturates with irradiation dose both in the case of Al and Al5083 alloy. The corresponding microstrain values did not show any change with irradiation dose in the case of the pure Al but showed an increase at higher irradiation doses in the case of Al5083 alloy. The microindendation results showed that unirradiated Al5083 alloy has higher hardness value compared to that of unirradiated pure Al. The hardness increased marginally with irradiation dose in the case of Al5083, whereas for pure Al, there was no significant change with dose.

SiO{sub 2} on silicon: behavior under heavy ion irradiation; SiO{sub 2} sur silicium: comportement sous irradiation avec des ions lourds

Energy Technology Data Exchange (ETDEWEB)

Rotaru, C

2004-03-15

Heavy ion irradiation was performed on a-SiO{sub 2} layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO{sub 2} is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO{sub 2} respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

Molecular dynamics study on interfacial thermal conductance of unirradiated and irradiated SiC/C

International Nuclear Information System (INIS)

Wang, Qingyu; Wang, Chenglong; Zhang, Yue; Li, Taosheng

2014-01-01

SiC f /SiC composite materials have been considered as candidate structural materials for several types of advanced nuclear reactors. Both experimental and computer simulations studies have revealed the degradation of thermal conductivity for this material after irradiation. The objective of this study is to investigate the effect of SiC/graphite interface structure and irradiation on the interfacial thermal conductance by using molecular dynamics simulation. Five SiC/graphite composite models were created with different interface structures, and irradiation was introduced near the interfaces. Thermal conductance was calculated by means of reverse-NEMD method. Results show that there is a positive correlation between the interfacial energy and interfacial C–Si bond quantity, and irradiated models showed higher interfacial energy compared with their unirradiated counterparts. Except the model with graphite atom plane parallel to the interface, the interfacial thermal conductance of unirradiated and irradiated (1000 eV) models, increases as the increase of interfacial energy, respectively. For all irradiated models, lattice defects are of importance in impacting the interfacial thermal conductance depending on the interface structure. For the model with graphite layer parallel to the interface, the interfacial thermal conductance increased after irradiation, for the other models the interfacial thermal conductance decreased. The vibrational density of states of atoms in the interfacial region was calculated to analyze the phonon mismatch at the interface

Interdiffusion processes at irradiated Cr/Si interfaces

Energy Technology Data Exchange (ETDEWEB)

Luneville, L., E-mail: laurence.luneville@cea.fr [DEN/DANS/DM2S/SERMA/LLPR/LRC-CARMEN, CEA Saclay, 91191 Gif-sur-Yvette (France); Largeau, L. [LPN-UPR20/CNRS, Route de Nozay, 91460 Marcoussis (France); Deranlot, C. [Unite Mixte de Physique CNRS/Thales, 1 Avenue Augustin Fresnel, 91767 Palaiseau (France); Ribis, J. [DEN/DANS/DMN/SRMA/LA2M/LRC-CARMEN, CEA Saclay, 91191 Gif-sur-Yvette (France); Ott, F. [DSM/IRAMIS/LLB/CEA/CNRS, CEA Saclay, 91191 Gif-sur-Yvette (France); Moncoffre, N. [IPNL/CNRS, Domaine scientifique de la Doua, 69622 Villeurbanne (France); Baldinozzi, G. [CNRS-SPMS/UMR 8580/LRC CARMEN Ecole Centrale Paris, 92295 Chatenay-Malabry (France); Simeone, D. [DEN/DANS/DMN/SRMA/LA2M/LRC-CARMEN, CEA Saclay, 91191 Gif-sur-Yvette (France)

2015-03-25

Highlights: • Interdiffusion at Cr/Si interfaces induced by ion beam mixing at room temperature. • Creation of Cr/Si alloy metastable phases. • Reconstruction of Cr/Si interdiffusion profile by X-ray reflectometry. • Quantitative correlation between Cr and Si profiles extracted from XRR and measured by EDX–TEM. - Abstract: Chromium silicon CrSi alloys are foreseen as possible materials for spintronic devices. Ion beam mixing could be an efficient technique to produce thin films of such alloys at room temperature while avoiding thermal diffusion. In order to assess this point, we have irradiated 20 nm Cr layer on a (1 0 0) Si wafer with 70 keV Kr ions. The X-ray reflectometry technique combined with Transmission Electron Microscopy and Energy Dispersive X-ray analysis was applied to analyze, at the nanometric scale, the formation of Cr/Si blurred interfaces induced by ion beam mixing. From the analysis of reflectivity curves, it appears that nanometric Cr{sub 5}Si{sub 3} and CrSi{sub 2} phases are produced at the early stage of the process. The existence of these two paramagnetic phases gives some clues to explain the reason why the experimentally observed ferrimagnetism was weaker than predicted.

Selective Adsorption of Nano-bio materials and nanostructure fabrication on Molecular Resists Modified by proton beam irradiation

International Nuclear Information System (INIS)

Lee, H. W.; Kim, H. S.; Kim, S. M.

2008-04-01

The purpose of this research is the fabrication of nanostructures on silicon substrate using proton beam and selectively adsorption of bio-nano materials on the patterned substrate. Recently, the miniaturization of the integrated devices with fine functional structures was intensively investigated, based on combination of nanotechnology (NT), biotechnology (BT) and information technology (IT). Because of the inherent limitation in optical lithography, large variety of novel patterning technologies were evolved to construct nano-structures onto a substrate. Atomic force microscope-based nanolithography has readily formed sub-50 nm patterns by the local modification of a substrate using a probe with a curvature of 10 nm. The surface property was regarded as one of the most important factors for AFM-based nanolithography as well as for other novel nanolithographies. The molecular thin films such as a self-assembled monolayer or a polymer resist layer have been used as an alternative to modifying the surface property. Although proton or ion beam irradiation has been used as an efficient tool to modify the physical, chemical and electrical properties of a surface, the nano-patterning on the substrate or the molecular film modified with the beam irradiation has hardly been studied at both home and abroad. The selective adsorption of nano-bio materials such as carbon nanotubes and proteins on the patterns would contribute to developing the integrated devices. The polystyrene nanoparticles (400 nm) were arrayed on al silicon surface using nanosphere lithography and the various nanopatterns were fabricated by proton beam irradiation on the polystyrene nanoparticles arrayed silicon surface. We obtained the two different nanopatterns such as polymer nanoring patterns and silicon oxide patterns on the same silicon substrate. The polymer nanoring patterns formed by the crosslinkage of polystyrene when proton beam was irradiated at the triangular void spaces that are enclosed by

Si Micro-turbine by Proton BeamWriting and Porous Silicon Micromachining

International Nuclear Information System (INIS)

Rajta, I.; Szilasi, S.Z.; Fekete, Z.

2008-01-01

Complete text of publication follows. A 3D Si micro-turbine characterized by high aspect ratio vertical walls was formed by the combination of proton beam writing (PBW) and subsequent selective porous Si (PS) etching. Crystal damages generated by the implanted protons result in increased resistivity, thereby limit or even prevent the current to flow through the implanted area during electrochemical etching. Characteristic feature of the proposed process is that the shape of the micro electromechanical (MEMS) components is defined by two implantation energies. A higher energy is applied for defining the housing of the device while the lower energy is used to write the moving components. The implantation energies were selected such as to result appropriate difference between the two projected ranges, thereby providing structures with different height after development. The thickness of the walls of the moving component and the isotropic etching profile of the electrochemical PS formation was also taken into consideration. The electrochemical etching is driven until the sacrificial PS layer completely under etches the moving components, but the etch-front does not reach the bottom of the housing. Therefore, the dissolution of PS results in a ready-to-operate device with a released moving component embedded in the cavity of the housing. The operation of the encapsulated device fabricated by the two-energy implantation is successfully demonstrated (Fig. 1). Rotation speed of the device is estimated in the range of thousands rpm, however, further analysis of the novel structure optimized for performance and MEMS compatible assembly will be done and precise characteristics will be determined by adequate optical read-out method. The feasibility of Proton Beam Writing combined with Porous Si Micromachining and conventional Si processing steps was successfully demonstrated by fabricating Si microturbine chip. The aligned, two-energy proton beam implantation can provide high

Effects of proton beam irradiation on seed germination and growth of soybean ( Glycine max L. Merr.)

Science.gov (United States)

Im, Juhyun; Kim, Woon Ji; Kim, Sang Hun; Ha, Bo-Keun

2017-12-01

The present study aimed to evaluate the morphological effects of proton beam irradiation on the seed germination, seedling survival, and plant growth of soybean. Seeds of three Korean elite cultivars (Kwangankong, Daepungkong, and Pungsannamulkong) were irradiated with a 57-MeV proton beam in the range of 50 - 400 Gy. The germination rates of all the varieties increased to > 95%; however, the survival rates were significantly reduced. At doses of > 300 Gy irradiation, the Daepungkong, Kwangankong, and Pungsannamulkong cultivars exhibited 39, 75, and 71% survival rates, respectively. In addition, plant height and the fresh weight of shoots and roots were significantly decreased by doses of > 100 Gy irradiation, as were the dry weights of the shoots and roots. However, SPAD values increased with increasing doses of irradiation. Abnormal plants with atypically branched stems, modified leaves, and chlorophyll mutations were observed. Based on the survival rate, plant growth inhibition, and mutation frequency, it appears that the optimum dosage of proton beam irradiation for soybean mutation breeding is between 250 and 300 Gy.

Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells

International Nuclear Information System (INIS)

Lee, H.S.; Yamaguchi, M.; Ekins-Daukes, N.J.; Khan, A.; Takamoto, T.; Imaizumi, M.; Ohshima, T.; Itoh, H.

2006-01-01

For the first time, by deep-level transient spectroscopy, 30keV proton irradiation-induced defects in n + /p-AlInGaP solar cells have been observed. After the 30keV proton irradiation, new deep-level defects such as two majority-carrier (hole) traps HP1 (E V +0.98eV, N T =3.8x10 14 cm -3 ) and HP2, and two minority-carrier (electron) traps EP1 (E C -0.71eV, N T =2.0x10 15 cm -3 ) and EP2 have been observed in p-AlInGaP. The introduction rate of majority-carrier trap center (HP1) is 380cm -1 , which is lower than that (1500cm -1 ) in 100keV proton-irradiated p-InGaP. From the minority-carrier injection annealing for HP1 defect and carrier concentration in 30keV proton-irradiated p-AlInGaP, HP1 defect is likely to act as a recombination center as well as a compensator center

Primary and aggregate color centers in proton irradiated LiF crystals and thin films for luminescent solid state detectors

Science.gov (United States)

Piccinini, M.; Ambrosini, F.; Ampollini, A.; Bonfigli, F.; Libera, S.; Picardi, L.; Ronsivalle, C.; Vincenti, M. A.; Montereali, R. M.

2015-04-01

Proton beams of 3 MeV energy, produced by the injector of a linear accelerator for proton therapy, were used to irradiate at room temperature lithium fluoride crystals and polycrystalline thin films grown by thermal evaporation. The irradiation fluence range was 1011-1015 protons/cm2. The proton irradiation induced the stable formation of primary and aggregate color centers. Their formation was investigated by optical absorption and photoluminescence spectroscopy. The F2 and F3+ photoluminescence intensities, carefully measured in LiF crystals and thin films, show linear behaviours up to different maximum values of the irradiation fluence, after which a quenching is observed, depending on the nature of the samples (crystals and films). The Principal Component Analysis, applied to the absorption spectra of colored crystals, allowed to clearly identify the formation of more complex aggregate defects in samples irradiated at highest fluences.

Proton irradiation induced defects in Cd and Zn doped InP

International Nuclear Information System (INIS)

Rybicki, G.C.; Williams, W.S.

1993-01-01

Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

75 MeV boron ion irradiation studies on Si PIN photodiodes

Energy Technology Data Exchange (ETDEWEB)

Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

2013-12-01

The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

Radiation defects and electron disordering in proton-irradiated diamond films

International Nuclear Information System (INIS)

Maschenko, V.E.; Soloviev, G.G.

1991-01-01

The absorption spectra are studied in the region of the fundamental absorption band and its longwave boundary for the 0.6 μm thick diamond films deposited onto Al 2 O 3 single crystal underlayers and irradiated by 100 keV and 50 keV protons at fluences of 10 13 -10 16 cm -2 . The E 0 β (6.10-5.9eV) and E 0 α (5.51-5.43eV) maxima and the exponential tails towards lower energies are resolved in the spectra of initial films. The halfwidths of the maxima and a weak temperature dependence of their parameters and of the Urbach tail slope are indicative of disordering of the film structure. The intrinsic maxima near and above the indirect absorption boundary in diamond Γ 25 '-Δ are identified with transitions in the disordered cubic and hexagonal phases of the diamond films. The proton irradiation stimulates the intensity redistribution of the intrinsic maxima, the absorption enhancement, and the change of the Urbach tail slope. The character of radiolysis has been found to depend on the composition of the nonirradiated carbon films and on proton fluence. (author). 8 refs.; 3 figs

Influence of irradiation on mechanical properties of Si-Ge alloys

Energy Technology Data Exchange (ETDEWEB)

Sichinava, Avtandil; Bokuchava, Guram; Chubinidze, Giorgi; Archuadze, Giorgi [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Gapishvili, Nodar [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Georgian Technical University, Tbilisi (Georgia)

2017-07-15

Impact of various irradiation (Ar and He ions, high energy electrons) on microhardness and indentation of monocrystalline Si{sub 0,98}Ge{sub 0,02} alloy is studied. Samples of Si and SiGe alloy are obtained by Czochralski (CZ) method in the [111] direction in the atmosphere of high purity Ar. High energy electron irradiation with fluence of ∝10{sup 12} cm{sup -2} is conducted at the Clinac 2100iX. Ar and He ion implantation is performed on modernized ''VEZUVI-3M'' plant. It is shown that for all types of irradiation the microhardness and indentation modulus versus load are characterized by reverse indentation size effect (ISE). With the increase of fluences of Ar and He ions, the maximum value of the effect increases. At high values of loading force impact on the indenter the mechanical characteristics slowly decrease. Impact of isochronous thermal annealing on mechanical properties of high energy electron irradiated samples is studied. Non-monotonic changes of microhardness and indentation modulus are revealed in the temperature range of 200-260 C. It is proposed that such changes are caused by radiation defects transformation. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Registration of interstitial anions in irradiated MgO crystals

International Nuclear Information System (INIS)

Surzhikov, A.P.; Pogrebnyak, A.D.

1985-01-01

Possibility of application of positron annihilation for detection in oxides of rare earth metals with interstitial component of Frenkel anion defects is revealed. Magnesium oxide monocrystals with Ca, Si, Fe, Al impurity contents of 0.1 wt.% were investigated. These crystals were irradiated by X-rays (45 kV, 20 μA) and protons (10 MeV). It is shown that heating of magnesium oxide crystals irradiated by protons up to 700 K completely anneals F + -centers. In this case the component disappears inth the pulse distributon at xi=5.0; the subsequent crystal irradiation with X-ray does not lead to its reduction

Radiosensitizing effect of nitric oxide in tumor cells and experimental tumors irradiated with gamma rays and proton beams

International Nuclear Information System (INIS)

Policastro, Lucia L.; Duran, Hebe; Molinari, Beatriz L.; Somacal, Hector R.; Valda, Alejandro A.

2003-01-01

Nitric oxide (NO) has been reported to be a radiosensitizer of mammalian cells under hypoxic conditions. In a previous study, we demonstrated an enhancement in radiation response induced by NO in mouse tumor cells under aerobic conditions, with an increasing effect as a function of malignancy. The aim of the present study was to evaluate the effect of NO in tumor cells and in experimental tumors irradiated with γ rays and proton beams. Irradiations were performed with a 137 Cs γ source and with proton beams generated by the TANDAR accelerator. Tumor cells were treated with the NO donor DETA-NO and the sensitizer enhancement ratio (SER) was calculated using the α parameter of the survival curve fitted to the linear-quadratic model. Tumor cells irradiated with protons were radio sensitized by DETA-NO only in the more malignant cells irradiated with low LET protons (2.69±0.08 keV/μm). For higher LET protons there were no radiosensitizing effect. For human tumor cells pre-treated with DETA-NO and irradiated with γ rays, a significantly greater effect was demonstrated in the malignant cells (MCF-7) as compared with the near normal cells (HBL-100). Moreover, a significant decrease in tumor growth was demonstrated in mice pre-treated with the NO donor spermine and irradiated with γ rays and low LET protons as compared with mice irradiated without pre-treatment with the NO donor. In conclusion, we demonstrated a differential effect of NO as a radiosensitizer of malignant cells, both with γ rays and low LET protons. This selectivity, coupled to the in vivo inhibition of tumor growth, is of great interest for the potential use of NO releasing agents in radiotherapy. (author)

Defects in electron irradiated vitreous SiO[sub 2] probed by positron annihiliation

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro (Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science); Kawano, Takao (Tsukuba Univ., Ibaraki (Japan). Radioisotope Centre); Itoh, Hisayoshi (Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment)

1994-10-10

Defects in 3 MeV electron irradiated vitreous SiO[sub 2] (v-SiO[sub 2]) were probed by the positron annihilation technique. For unirradiated v-SiO[sub 2] specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author).

28Si total body irradiation injures bone marrow hematopoietic stem cells via induction of cellular apoptosis

Science.gov (United States)

Chang, Jianhui; Feng, Wei; Wang, Yingying; Allen, Antiño R.; Turner, Jennifer; Stewart, Blair; Raber, Jacob; Hauer-Jensen, Martin; Zhou, Daohong; Shao, Lijian

2017-05-01

Long-term space mission exposes astronauts to a radiation environment with potential health hazards. High-energy charged particles (HZE), including 28Si nuclei in space, have deleterious effects on cells due to their characteristics with high linear energy transfer and dense ionization. The influence of 28Si ions contributes more than 10% to the radiation dose equivalent in the space environment. Understanding the biological effects of 28Si irradiation is important to assess the potential health hazards of long-term space missions. The hematopoietic system is highly sensitive to radiation injury and bone marrow (BM) suppression is the primary life-threatening injuries after exposure to a moderate dose of radiation. Therefore, in the present study we investigated the acute effects of low doses of 28Si irradiation on the hematopoietic system in a mouse model. Specifically, 6-month-old C57BL/6 J mice were exposed to 0.3, 0.6 and 0.9 Gy 28Si (600 MeV) total body irradiation (TBI). The effects of 28Si TBI on BM hematopoietic stem cells (HSCs) and hematopoietic progenitor cells (HPCs) were examined four weeks after the exposure. The results showed that exposure to 28Si TBI dramatically reduced the frequencies and numbers of HSCs in irradiated mice, compared to non-irradiated controls, in a radiation dose-dependent manner. In contrast, no significant changes were observed in BM HPCs regardless of radiation doses. Furthermore, irradiated HSCs exhibited a significant impairment in clonogenic ability. These acute effects of 28Si irradiation on HSCs may be attributable to radiation-induced apoptosis of HSCs, because HSCs, but not HPCs, from irradiated mice exhibited a significant increase in apoptosis in a radiation dose-dependent manner. However, exposure to low doses of 28Si did not result in an increased production of reactive oxygen species and DNA damage in HSCs and HPCs. These findings indicate that exposure to 28Si irradiation leads to acute HSC damage.

Measurement and calculation of characteristic prompt gamma ray spectra emitted during proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Polf, J C; Peterson, S; Beddar, S [M D Anderson Cancer Center, Univeristy of Texas, Houston, TX 77030 (United States); McCleskey, M; Roeder, B T; Spiridon, A; Trache, L [Cyclotron Institute, Texas A and M University, College Station, TX 77843 (United States)], E-mail: jcpolf@mdanderson.org

2009-11-21

In this paper, we present results of initial measurements and calculations of prompt gamma ray spectra (produced by proton-nucleus interactions) emitted from tissue equivalent phantoms during irradiations with proton beams. Measurements of prompt gamma ray spectra were made using a high-purity germanium detector shielded either with lead (passive shielding), or a Compton suppression system (active shielding). Calculations of the spectra were performed using a model of both the passive and active shielding experimental setups developed using the Geant4 Monte Carlo toolkit. From the measured spectra it was shown that it is possible to distinguish the characteristic emission lines from the major elemental constituent atoms (C, O, Ca) in the irradiated phantoms during delivery of proton doses similar to those delivered during patient treatment. Also, the Monte Carlo spectra were found to be in very good agreement with the measured spectra providing an initial validation of our model for use in further studies of prompt gamma ray emission during proton therapy. (note)

SiO2 on silicon: behavior under heavy ion irradiation

International Nuclear Information System (INIS)

Rotaru, C.

2004-03-01

Heavy ion irradiation was performed on a-SiO 2 layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO 2 is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO 2 respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

Energy Technology Data Exchange (ETDEWEB)

Meier, D. E-mail: dirk.meier@cern.ch.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Manfredi, P.F.; Marshall, R.D.; Mishina, M.; Le Normand, F.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

1999-04-21

CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/c and 500 Mev protons up to a fluence of 5x10{sup 15} p/cm{sup 2}. We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1x10{sup 15} p/cm{sup 2} and decreases by {approx}40% at 5x10{sup 15} p/cm{sup 2}. Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/c and 500 MeV protons up to at least 1x10{sup 15}p/cm{sup 2} without signal loss.

High-temperature annealing of proton irradiated beryllium – A dilatometry-based study

Energy Technology Data Exchange (ETDEWEB)

Simos, Nikolaos, E-mail: simos@bnl.gov [Brookhaven National Laboratory, Upton, NY, 11973 (United States); Elbakhshwan, Mohamed; Zhong, Zhong; Ghose, Sanjit [Brookhaven National Laboratory, Upton, NY, 11973 (United States); Savkliyildiz, Ilyas [Rutgers University (United States)

2016-08-15

S−200 F grade beryllium has been irradiated with 160 MeV protons up to 1.2 10{sup 20} cm{sup −2} peak fluence and irradiation temperatures in the range of 100–200 °C. To address the effect of proton irradiation on dimensional stability, an important parameter in its consideration in fusion reactor applications, and to simulate high temperature irradiation conditions, multi-stage annealing using high precision dilatometry to temperatures up to 740 °C were conducted in air. X-ray diffraction studies were also performed to compliment the macroscopic thermal study and offer a microscopic view of the irradiation effects on the crystal lattice. The primary objective was to qualify the competing dimensional change processes occurring at elevated temperatures namely manufacturing defect annealing, lattice parameter recovery, transmutation {sup 4}He and {sup 3}H diffusion and swelling and oxidation kinetics. Further, quantification of the effect of irradiation dose and annealing temperature and duration on dimensional changes is sought. The study revealed the presence of manufacturing porosity in the beryllium grade, the oxidation acceleration effect of irradiation including the discontinuous character of oxidation advancement, the effect of annealing duration on the recovery of lattice parameters recovery and the triggering temperature for transmutation gas diffusion leading to swelling.

Irradiation effects of Ar cluster ion beams on Si substrates

International Nuclear Information System (INIS)

Ishii, Masahiro; Sugahara, Gaku; Takaoka, G.H.; Yamada, Isao

1993-01-01

Gas-cluster ion beams can be applied to new surface modification techniques such as surface cleaning, low damage sputtering and shallow junction formation. The effects of energetic Ar cluster impacts on solid surface were studied for cluster energies of 10-30keV. Irradiation effects were studied by RBS. For Si(111) substrates, irradiated with Ar ≥500 clusters to a dose of 1x10 15 ion/cm 2 at acceleration voltage 15kV, 2x10 14 atoms/cm 2 implanted Ar atoms were detected. In this case, the energy per cluster atom was smaller than 30eV; at this energy, no significant implantation occurs in the case of monomer ions. Ar cluster implantation into Si substrates occurred due to the high energy density irradiation. (author)

Primary and aggregate color centers in proton irradiated LiF crystals and thin films for luminescent solid state detectors

International Nuclear Information System (INIS)

Piccinini, M; Ambrosini, F; Ampollini, A; Bonfigli, F; Libera, S; Picardi, L; Ronsivalle, C; Vincenti, M A; Montereali, R M

2015-01-01

Proton beams of 3 MeV energy, produced by the injector of a linear accelerator for proton therapy, were used to irradiate at room temperature lithium fluoride crystals and polycrystalline thin films grown by thermal evaporation. The irradiation fluence range was 10 11 -10 15 protons/cm 2 . The proton irradiation induced the stable formation of primary and aggregate color centers. Their formation was investigated by optical absorption and photoluminescence spectroscopy. The F 2 and F 3 + photoluminescence intensities, carefully measured in LiF crystals and thin films, show linear behaviours up to different maximum values of the irradiation fluence, after which a quenching is observed, depending on the nature of the samples (crystals and films). The Principal Component Analysis, applied to the absorption spectra of colored crystals, allowed to clearly identify the formation of more complex aggregate defects in samples irradiated at highest fluences. (paper)

Effectiveness of proton-beam irradiation of the pituitary gland in children with Itsenko-Cushing disease

International Nuclear Information System (INIS)

Zhukovskij, M.A.; Bukhman, A.I.; Levshina, R.B.; Kirpatovskaya, L.E.; Kolesnikova, G.S.; Pankova, S.S.; Lisovets, S.P.; Gosudarstvennyj Komitet po Ispol'zovaniyu Atomnoj Ehnergii SSSR, Moscow

1990-01-01

The results of the treatment of 20 children with Icenko-Cushing disease (ICD) by proton-beam irradiation of the pituitary glandare presented. The use of the medical proton beam of the Institute of Theoretical and Experimental Physics found to be effective for the treatment of children with mild and average forms of ICD. Irradiation of the pituitary gland at a dose of 70-100 Gy is accompanied by general and local radiation reactions which are not dangerous for children. The time of development of remission after irradiation depends on a degree of severity and features of a course of disease

Formation cross-sections and chromatographic separation of protactinium isotopes formed in proton-irradiated thorium metal

Energy Technology Data Exchange (ETDEWEB)

Radchenko, Valery; Engle, Jonathan W.; Wilson, Justin J.; Maassen, Joel R.; Nortier, Meiring F.; Birnbaum, Eva R.; John, Kevin D.; Fassbender, Michael E. [Los Alamos National Laboratory, NM (United States)

2016-08-01

Targeted alpha therapy (TAT) is a treatment method of increasing interest to the clinical oncology community that utilizes α-emitting radionuclides conjugated to biomolecules for the selective killing of tumor cells. Proton irradiation of thorium generates a number of α-emitting radionuclides with therapeutic potential for application via TAT. In particular, the radionuclide {sup 230}Pa is formed via the {sup 232}Th(p, 3n) nuclear reaction and partially decays to {sup 230}U, an α emitter which has recently received attention as a possible therapy nuclide. In this study, we estimate production yields for {sup 230}Pa and other Pa isotopes from proton-irradiated thorium based on cross section measurements. We adopt existing methods for the chromatographic separation of protactinium isotopes from proton irradiated thorium matrices to combine and optimize them for effective fission product decontamination.

Fractionated proton beam irradiation of pituitary adenomas

International Nuclear Information System (INIS)

Ronson, Brian B.; Schulte, Reinhard W.; Han, Khanh P.; Loredo, Lilia N.; Slater, James M.; Slater, Jerry D.

2006-01-01

Purpose: Various radiation techniques and modalities have been used to treat pituitary adenomas. This report details our experience with proton treatment of these tumors. Methods and Materials: Forty-seven patients with pituitary adenomas treated with protons, who had at least 6 months of follow-up, were included in this analysis. Forty-two patients underwent a prior surgical resection; 5 were treated with primary radiation. Approximately half the tumors were functional. The median dose was 54 cobalt-gray equivalent. Results: Tumor stabilization occurred in all 41 patients available for follow-up imaging; 10 patients had no residual tumor, and 3 had greater than 50% reduction in tumor size. Seventeen patients with functional adenomas had normalized or decreased hormone levels; progression occurred in 3 patients. Six patients have died; 2 deaths were attributed to functional progression. Complications included temporal lobe necrosis in 1 patient, new significant visual deficits in 3 patients, and incident hypopituitarism in 11 patients. Conclusion: Fractionated conformal proton-beam irradiation achieved effective radiologic, endocrinological, and symptomatic control of pituitary adenomas. Significant morbidity was uncommon, with the exception of postradiation hypopituitarism, which we attribute in part to concomitant risk factors for hypopituitarism present in our patient population

Optical and electrical properties of some electron and proton irradiated polymers

International Nuclear Information System (INIS)

Mishra, R.; Tripathy, S.P.; Sinha, D.; Dwivedi, K.K.; Ghosh, S.; Khathing, D.T.; Mueller, M.; Fink, D.; Chung, W.H.

2000-01-01

Ion beam treatment studies have been carried out to investigate the potential for improvements in conductivity properties of the polymers Polytetrafluroethylene (PTFE), Polyimide (PI), Polyethyleneterepthalate (PET) and Polypropylene (PP), after 2 MeV electron and 62 MeV proton irradiation. The shift in optical absorption edges as observed by UV-VIS spectra of the irradiated polymers has been correlated to the optical band-gap using Tauc's expression. A decrease in the optical band-gap has been observed in irradiated PP and PTFE, but no considerable change was found for the optical band-gaps of PET and PI. Further AC conductivity measurements confirmed an increase in conductivity in electron irradiated PP

Analysis of neutron irradiation effects on thermal conductivity of SiC-based composites and monolithic ceramics

Energy Technology Data Exchange (ETDEWEB)

Youngblood, G.E.; Senor, D.J. [Pacific Northwest National Lab., Richland, WA (United States)

1997-08-01

After irradiation of a variety of SiC-based materials to 33 or 43 dpa-SiC at 1000{degrees}C, their thermal conductivity values were degraded and became relatively temperature independent, which indicates that the thermal resistivity was dominated by point defect scattering. The magnitude of irradiation-induced conductivity degradation was greater at lower temperatures and typically was larger for materials with higher unirradiated conductivity. From these data, a K{sub irr}/K{sub unirr} ratio map which predicts the expected equilibrium thermal conductivity for most SiC-based materials as a function of irradiation temperature was derived. Due to a short-term EOC irradiation at 575{degrees} {+-} 60{degrees}C, a duplex irradiation defect structure was established. Based on an analysis of the conductivity and swelling recovery after post-irradiation anneals for these materials with the duplex defect structure, several consequences for irradiating SiC at temperatures of 1000{degrees}C or above are given. In particular, the thermal conductivity degradation in the fusion relevant 800{degrees}-1000{degrees}C temperature range may be more severe than inferred from SiC swelling behavior.

Analysis of neutron irradiation effects on thermal conductivity of SiC-based composites and monolithic ceramics

International Nuclear Information System (INIS)

Youngblood, G.E.; Senor, D.J.

1997-01-01

After irradiation of a variety of SiC-based materials to 33 or 43 dpa-SiC at 1000 degrees C, their thermal conductivity values were degraded and became relatively temperature independent, which indicates that the thermal resistivity was dominated by point defect scattering. The magnitude of irradiation-induced conductivity degradation was greater at lower temperatures and typically was larger for materials with higher unirradiated conductivity. From these data, a K irr /K unirr ratio map which predicts the expected equilibrium thermal conductivity for most SiC-based materials as a function of irradiation temperature was derived. Due to a short-term EOC irradiation at 575 degrees ± 60 degrees C, a duplex irradiation defect structure was established. Based on an analysis of the conductivity and swelling recovery after post-irradiation anneals for these materials with the duplex defect structure, several consequences for irradiating SiC at temperatures of 1000 degrees C or above are given. In particular, the thermal conductivity degradation in the fusion relevant 800 degrees-1000 degrees C temperature range may be more severe than inferred from SiC swelling behavior

Regrowth of Si and Ge under laser irradiation

International Nuclear Information System (INIS)

Bertolotti, M.; Vitali, G.

1979-01-01

The effects of pulsed laser irradiation on amorphous layers of Si and Ge obtained via ion implantation are considered. Amorphous-polycrystalline, amorphous-single crystal and polycrystalline-single crystal transitions have been obtained. Residual disorder and mechanical damage are considered. (author)

Proton irradiation of a swept charge device at cryogenic temperature and the subsequent annealing

International Nuclear Information System (INIS)

Gow, J P D; Smith, P H; Hall, D J; Holland, A D; Murray, N J; Pool, P

2015-01-01

A number of studies have demonstrated that a room temperature proton irradiation may not be sufficient to provide an accurate estimation of the impact of the space radiation environment on detector performance. This is a result of the relationship between defect mobility and temperature, causing the performance to vary subject to the temperature history of the device from the point at which it was irradiated. Results measured using Charge Coupled Devices (CCD) irradiated at room temperature therefore tend to differ from those taken when the device was irradiated at a cryogenic temperature, more appropriate considering the operating conditions in space, impacting the prediction of in-flight performance. This paper describes the cryogenic irradiation, and subsequent annealing of an e2v technologies Swept Charge Device (SCD) CCD236 irradiated at −35.4°C with a 10 MeV equivalent proton fluence of 5.0 × 10 8 protons · cm −2 . The CCD236 is a large area (4.4 cm 2 ) X-ray detector that will be flown on-board the Chandrayaan-2 and Hard X-ray Modulation Telescope spacecraft, in the Chandrayaan-2 Large Area Soft X-ray Spectrometer and the Soft X-ray Detector respectively. The SCD is readout continually in order to benefit from intrinsic dither mode clocking, leading to suppression of the surface component of the dark current and allowing the detector to be operated at warmer temperatures than a conventional CCD. The SCD is therefore an excellent choice to test and demonstrate the variation in the impact of irradiation at cryogenic temperatures in comparison to a more typical room temperature irradiation

Dose determination of 600 MeV proton irradiated specimens

International Nuclear Information System (INIS)

Gavillet, D.

1991-01-01

The calculation method for the experimental determination of the atomic production cross section from the γ activity measurements are presented. This method is used for the determination of some isotope production cross sections for 600 MeV proton irradition in MANET steel, copper, tungsten, gold and titanium. The results are compared with some calculation. These values are used to determine the dose of specimens irradiated in the PIREX II facility. The results are discussed in terms of the irradiation parameters. A guide for the use of the production cross section determined in the dosimetry experiment are given. (author) tabs., refs

Refractive index depth profile in PMMA due to proton irradiation

International Nuclear Information System (INIS)

Szilasi, S.Z.; Rajta, I.; Budai, J.; Toth, Z.; Petrik, P.; Baradacs, E.

2006-01-01

Complete text of publication follows. During Proton Beam Writing the beam damage causes chain scissioning in the polymer resist material (e.g. PMMA (Polymethyl methacrylate)), producing smaller molecular weight chains. Hydrogen implantation also takes place at the end of range. Compaction of the sample has been observed too, which means that the sample density becomes higher at the places where proton irradiation occurred. Furthermore, P-beam Writing has been successfully used to create buried channel waveguides in PMMA [1], since proton irradiation increases the refractive index. There are two ways of fabricating waveguides using P-beam Writing, one of them applies direct micromachining of the high refractive index core followed by the coating of a lower refractive index cladding layer. In this application the refractive indices of the substrate, the core and the cladding have to be known, which should be homogeneous within the whole structure. The other method allows producing buried waveguides. In this case proton beam writing is used to modify the refractive index along the ion path in the sample, where most of the ion energy is deposited near the end of range also known as the Bragg peak. For polymers 10 -3 refractive index change has been reported, which is usually sufficient for forming waveguides. Those measurements of the refractive index change have been performed by the refracted near field technique. In this work we used ellipsometry, in order to measure the optical parameters of the P-beam treated sample near the surface, and along the Bragg curve. Ellipsometry measures the change in the polarization state of light occurring during reflection. This change is related to the quality of the reflecting surface (i.e. the physical structure, layer thicknesses, optical constants, surface roughness, etc.). >From these measurements the refractive index and the extinction coefficient can be determined rather accurately, which makes ellipsometry a powerful tool

Photocarrier Radiometry for Non-contact Evaluation of Monocrystalline Silicon Solar Cell Under Low-Energy (< 200 keV) Proton Irradiation

Science.gov (United States)

Oliullah, Md.; Liu, J. Y.; Song, P.; Wang, Y.

2018-06-01

A three-layer theoretical model is developed for the characterization of the electronic transport properties (lifetime τ, diffusion coefficient D, and surface recombination velocity s) with energetic particle irradiation on solar cells using non-contact photocarrier radiometry. Monte Carlo (MC) simulation is carried out to obtain the depth profiles of the proton irradiation layer at different low energies (solar cells are investigated under different low-energy proton irradiation, and the carrier transport parameters of the three layers are obtained by best-fitting of the experimental results. The results show that the low-energy protons have little influence on the transport parameters of the non-irradiated layer, but high influences on both of the p and n-region irradiation layers which are consisted of MC simulation.

Proton and Neutron Irradiation Tests of Readout Electronics of the ATLAS Hadronic Endcap Calorimeter

CERN Document Server

Menke, Sven; The ATLAS collaboration

2012-01-01

The readout electronics of the ATLAS Hadronic Endcap Calorimeter will have to withstand the about ten times larger radiation environment of the future high-luminosity LHC (HL-LHC) compared to their design values. The GaAs ASIC which comprises the heart of the readout electronics has been exposed to neutron and proton radiation with fluences up to ten times the total expected fluences for ten years of running of the HL-LHC. Neutron tests where performed at the NPI in Rez, Czech Republic, where a 36 MeV proton beam is directed on a thick heavy water target to produce neutrons. The proton irradiation was done with 200 MeV protons at the PROSCAN area of the Proton Irradiation Facility at the PSI in Villigen, Switzerland. In-situ measurements of S-parameters in both tests allow the evaluation of frequency dependent performance parameters - like gain and input impedance - as a function of the fluence. The linearity of the ASIC response has been measured directly in the neutron tests with a triangular input pulse of...

Proton and Neutron Irradiation Tests of Readout Electronics of the ATLAS Hadronic Endcap Calorimeter

CERN Document Server

INSPIRE-00106910

2012-01-01

The readout electronics of the ATLAS Hadronic Endcap Calorimeter will have to withstand the about ten times larger radiation environment of the future high-luminosity LHC (HL-LHC) compared to their design values. The GaAs ASIC which comprises the heart of the readout electronics has been exposed to neutron and proton radiation with fluences up to ten times the total expected fluences for ten years of running of the HL-LHC. Neutron tests were performed at the NPI in Rez, Czech Republic, where a 36 MeV proton beam is directed on a thick heavy water target to produce neutrons. The proton irradiation was done with 200 MeV protons at the PROSCAN area of the Proton Irradiation Facility at the PSI in Villigen, Switzerland. In-situ measurements of S-parameters in both tests allow the evaluation of frequency dependent performance parameters - like gain and input impedance - as a function of the fluence. The linearity of the ASIC response has been measured directly in the neutron tests with a triangular input pulse of ...

Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

Energy Technology Data Exchange (ETDEWEB)

Njoroge, E.G., E-mail: eric.njoroge@up.ac.za [Department of Physics, University of Pretoria, Pretoria (South Africa); Theron, C.C. [Department of Physics, University of Pretoria, Pretoria (South Africa); Skuratov, V.A. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Wamwangi, D. [School of Physics, University of Witwatersrand, Johannesburg (South Africa); Hlatshwayo, T.T. [Department of Physics, University of Pretoria, Pretoria (South Africa); Comrie, C.M. [MRD, iThemba LABS, P.O. Box 722, Somerset West 7129 (South Africa); Malherbe, J.B. [Department of Physics, University of Pretoria, Pretoria (South Africa)

2016-03-15

The solid-state reactions between Pd thin films and 6H-SiC substrates induced by thermal annealing, room temperature swift heavy ion (SHI) irradiation and high temperature SHI irradiation have been investigated by in situ and real-time Rutherford backscattering spectrometry (RBS) and Grazing incidence X-ray diffraction (GIXRD). At room temperature, no silicides were detected to have formed in the Pd/SiC samples. Two reaction growth zones were observed in the samples annealed in situ and analysed by real time RBS. The initial reaction growth region led to formation of Pd{sub 3}Si or (Pd{sub 2}Si + Pd{sub 4}Si) as the initial phase(s) to form at a temperature of about 450 °C. Thereafter, the reaction zone did not change until a temperature of 640 °C was attained where Pd{sub 2}Si was observed to form in the reaction zone. Kinetic analysis of the initial reaction indicates very fast reaction rates of about 1.55 × 10{sup 15} at cm{sup −2}/s and the Pd silicide formed grew linear with time. SHI irradiation of the Pd/SiC samples was performed by 167 MeV Xe{sup 26+} ions at room temperature at high fluences of 1.07 × 10{sup 14} and 4 × 10{sup 14} ions/cm{sup 2} and at 400 °C at lower fluences of 5 × 10{sup 13} ions/cm{sup 2}. The Pd/SiC interface was analysed by RBS and no SHI induced diffusion was observed for room temperature irradiations. The sample irradiated at 400 °C, SHI induced diffusion was observed to occur accompanied with the formation of Pd{sub 4}Si, Pd{sub 9}Si{sub 2} and Pd{sub 5}Si phases which were identified by GIXRD analysis.

Radiosensitization by PARP inhibition to proton beam irradiation in cancer cells

Energy Technology Data Exchange (ETDEWEB)

Hirai, Takahisa [Department of Radiation Oncology, Juntendo University Faculty of Medicine, Bunkyo-ku, Tokyo (Japan); Division of Chemotherapy and Clinical Cancer Research, National Cancer Center Research Institute, Chuo-ku, Tokyo (Japan); Saito, Soichiro; Fujimori, Hiroaki [Division of Chemotherapy and Clinical Cancer Research, National Cancer Center Research Institute, Chuo-ku, Tokyo (Japan); Matsushita, Keiichiro; Nishio, Teiji [Institute of Biomedical and Health Sciences, Hiroshima University, Hiroshima-shi, Hiroshima (Japan); Okayasu, Ryuichi [International Open Laboratory, National Institute of Radiological Science, Chiba-shi, Chiba (Japan); Masutani, Mitsuko, E-mail: mmasutan@nagasaki-u.ac.jp [Division of Chemotherapy and Clinical Cancer Research, National Cancer Center Research Institute, Chuo-ku, Tokyo (Japan); Department of Frontier Life Sciences, Nagasaki University Graduate School of Biomedical Sciences, Nagasaki (Japan)

2016-09-09

The poly(ADP-ribose) polymerase (PARP)-1 regulates DNA damage responses and promotes base excision repair. PARP inhibitors have been shown to enhance the cytotoxicity of ionizing radiation in various cancer cells and animal models. We have demonstrated that the PARP inhibitor (PARPi) AZD2281 is also an effective radiosensitizer for carbon-ion radiation; thus, we speculated that the PARPi could be applied to a wide therapeutic range of linear energy transfer (LET) radiation as a radiosensitizer. Institutes for biological experiments using proton beam are limited worldwide. This study was performed as a cooperative research at heavy ion medical accelerator in Chiba (HIMAC) in National Institute of Radiological Sciences. HIMAC can generate various ion beams; this enabled us to compare the radiosensitization effect of the PARPi on cells subjected to proton and carbon-ion beams from the same beam line. After physical optimization of proton beam irradiation, the radiosensitization effect of the PARPi was assessed in the human lung cancer cell line, A549, and the pancreatic cancer cell line, MIA PaCa-2. The effect of the PARPi, AZD2281, on radiosensitization to Bragg peak was more significant than that to entrance region. The PARPi increased the number of phosphorylated H2AX (γ-H2AX) foci and enhanced G2/M arrest after proton beam irradiation. This result supports our hypothesis that a PARPi could be applied to a wide therapeutic range of LET radiation by blocking the DNA repair response. - Highlights: • Effective radiosensitizers for particle radiation therapy have not been reported. • PARP inhibitor treatment radiosensitized after proton beam irradiation. • The sensitization at Bragg peak was greater than that at entrance region. • DSB induction and G2/M arrest is involved in the sensitization mechanism.

Nanogranular SiO{sub 2} proton gated silicon layer transistor mimicking biological synapses

Energy Technology Data Exchange (ETDEWEB)

Liu, M. J.; Huang, G. S., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Guo, Q. L.; Tian, Z. A.; Li, G. J.; Mei, Y. F. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Feng, P., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Shao, F.; Wan, Q. [School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

2016-06-20

Silicon on insulator (SOI)-based transistors gated by nanogranular SiO{sub 2} proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

Irradiation damage in U{sub 3}Si

Energy Technology Data Exchange (ETDEWEB)

MacEwan, J R; Bethune, B

1969-04-15

The ordered body-centered tetragonal structure of U{sub 3}S1 transforms allotropically or by irradiation damage to ordered and disordered face -centered cubic structures respectively. An exposure of about 6 x 10{sup 16} fissions/cm{sup 3} at 100{sup o}C produced X-ray diffraction patterns of the cubic form with a 0.6% decrease in X-ray density. However, immersion density measurements showed a volume increase of 2.3% at a similar exposure. Further irradiation removed all but two peaks from the diffraction pattern indicating a trend to an amorphous structure. Electrical resistivity measurements showed that U{sub 3}Si is an electronic conductor with a large positive temperature coefficient. Measurements made below the irradiation temperature of 100{sup o}C showed that the temperature coefficient decreased with irradiation and approached zero at high exposure, Amorphous materials have a negligible temperature coefficient, so the result confirms the trend observed by X-ray analyses. (author)

Electric dipole moment in KH{sub 2}PO{sub 4} systematically modified by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Jin Kweon, Jung; Lee, Cheol Eui [Department of Physics and Institute for Nano Science, Korea University, Seoul 136-713 (Korea, Republic of); Noh, S. J.; Kim, H. S. [Department of Applied Physics, Dankook University, Yongin 448-701 (Korea, Republic of)

2012-01-01

We have carried out an impedance spectroscopy study on a series of proton-irradiated KH{sub 2}PO{sub 4} (KDP) systems. A systematic modification was observed in the transverse dipole moment of the proton-irradiated KDP systems, associated with hydrogen-ion displacements, as obtained from dielectric constant measurements by using a mean-field approximation. Besides, intercorrelation of the charge transport with the dielectric properties was revealed, both having closely to do with the hydrogen-bond modification.

Spin flip in inelastic scattering of protons on 28Si nuclei

International Nuclear Information System (INIS)

Wang Syn Chan; Komsan, M.N.Kh.; Osetinskij, G.M.; Golubev, S.L.; Kurepin, A.B.; Likhosherstov, V.N.

1975-01-01

We measured the energy and angular dependences of the spin-flip probability and of the differential cross section for inelastic scattering of protons in the resonance region of the reaction 28 Si(p,p') 23 Si* (2 + , 1.78 MeV) at E sub(p) = 3.095 and 3.34 MeV. The energy dependence of the spin-flip probability was found to have a resonance character. The angular distribution of the inelastic scattering and of the spin-flip probability is asymmetrical with respect to 90 deg in the c.m.s

Influence of reactor irradiation on the protons intercalation and stability of barium cerates and strontium cerates

International Nuclear Information System (INIS)

Aksenova, T.I.; Khromushin, I.V.; Zhotabaev, Zh.R.; Kornienko, P.A.; Munasbaeva, K.K.

2005-01-01

The work is devoted to study of reactor irradiation influence on the gas-solid exchange processes in the high-temperature proton semiconductors on the base of cerates and strontium. A number of new regularities of influence of content of some proton semiconductors on the gas-solid exchange processes was established. It is shown, that increase of rate of cation doping rate leads to considerable lowering in its of carbonic gas content, and therefore to improvement their tribological properties. It is revealed, that irradiation of polycrystalline samples leads to growth of oxygen amount desorbed from samples, whereas irradiation of monocrystalline samples practically does not has effect on the desorbed oxygen amount. It was found, that character of relation of intercalated in the sample protons depend on sample doping rate

Response of thyroid follicular cells to gamma irradiation compared to proton irradiation: II. The role of connexin 32

Science.gov (United States)

Green, L. M.; Tran, D. T.; Murray, D. K.; Rightnar, S. S.; Todd, S.; Nelson, G. A.

2002-01-01

The objective of this study was to determine whether connexin 32-type gap junctions contribute to the "contact effect" in follicular thyrocytes and whether the response is influenced by radiation quality. Our previous studies demonstrated that early-passage follicular cultures of Fischer rat thyroid cells express functional connexin 32 gap junctions, with later-passage cultures expressing a truncated nonfunctional form of the protein. This model allowed us to assess the role of connexin 32 in radiation responsiveness without relying solely on chemical manipulation of gap junctions. The survival curves generated after gamma irradiation revealed that early-passage follicular cultures had significantly lower values of alpha (0.04 Gy(-1)) than later-passage cultures (0.11 Gy(-1)) (P 0.1, n = 9). This strongly suggests that the presence of functional connexin 32-type gap junctions was contributing to radiation resistance in gamma-irradiated thyroid follicles. Survival curves from proton-irradiated cultures had alpha values that were not significantly different whether cells expressed functional connexin 32 (0.10 Gy(-1)), did not express connexin 32 (0.09 Gy(-1)), or were down-regulated (early-passage plus heptanol, 0.09 Gy(-1); late-passage plus heptanol, 0.12 Gy(-1)) (P > 0.1, n = 19). Thus, for proton irradiation, the presence of connexin 32-type gap junctional channels did not influence their radiosensitivity. Collectively, the data support the following conclusions. (1) The lower alpha values from the gamma-ray survival curves of the early-passage cultures suggest greater repair efficiency and/or enhanced resistance to radiation-induced damage, coincident with the expression of connexin 32-type gap junctions. (2) The increased sensitivity of FRTL-5 cells to proton irradiation was independent of their ability to communicate through connexin 32 gap junctions. (3) The fact that the beta components of the survival curves from both gamma rays and proton beams were

Slow-positron annihilation analysis on optical degradation of ZnO white paint irradiated by protons

International Nuclear Information System (INIS)

Xiao Haiying; Li Chundong; Yang Dezhuang; He Shiyu; Jia Jin; Ye Bangjiao

2009-01-01

The optical degradation in ZnO white paint under low energy proton exposure was investigated in terms of slow-positron annihilation spectroscopy. Experimental results show that with increasing proton fluence, the S-parameter of the Doppler broadening spectrum gradually decreases, and the W-parameter increases.The slope plot of the fitting S-W changes under the proton exposure. The decrease of S-parameter can be attributed to a decrease of zinc vacancy content and the formation of quasi-positronium. The quasi-positronium is viewed as a bounded state of a singly ionized oxygen vacancy (trapping an electron) with a positron, the formation of which could reduce the positron annihilation rate and thus the S-parameter. The decrease of S-parameter demonstrates the amount increase of singly ionized oxygen vacancy of ZnO white paint caused by proton irradiation. The change of the S-Wplot slope is related to the transformation of doubly ionized oxygen vacancies into singly ionized oxygen vacancies under proton irradiation. (authors)

Hydrogen Release From 800-MeV Proton-Irradiated Tungsten

International Nuclear Information System (INIS)

Oliver, Brian M.; Venhaus, Thomas J.; Causey, Rion A.; Garner, Francis A.; Maloy, Stuart A.

2002-01-01

Tungsten irradiated in spallation neutron sources such as those proposed for the Accelerator Production of Tritium (APT) project, or in proposed fusion reactors, will contain large quantities of generated helium and hydrogen gas. In the APT, spallation neutrons would be generated by the interaction of high energy (∼1 GeV) protons with solid tungsten rods or cylinders. In fusion reactors, tungsten used in a tokamak diverter will contain hydrogen, as well as deuterium and tritium diffusing in from the plasma-facing surface. The release kinetics of these gases during various off-normal scenarios involving loss of coolant and afterheat-induced rises in temperature is of particular interest for both applications. To determine the release kinetics of hydrogen from tungsten, tungsten rods irradiated with 800 MeV protons in the Los Alamos Neutron Science Center (LANCE) to high exposures as part of the APT project have been examined. Hydrogen evolution from the tungsten was measured using a dedicated mass spectrometer system by subjecting the specimens to an essentially linear temperature ramp from ∼323 K to ∼1473 K. Release profiles are compared with predictions obtained using the Tritium Migration Analysis Program (TMAP4). Input parameters for the modeling, consisting of diffusivity, recombination rate coefficient, and trapping, are discussed. The measurements show that for high proton doses, the majority of the hydrogen is released gradually, starting at about 900 K and reaching a maximum at about 1400 K, where it drops fairly rapidly. Comparisons with TMAP show reasonable agreement at high proton dose using a trap value of 1.4 eV and a trap density of 3%. There is also a small release fraction occurring at ∼600 K which predominates at lower proton doses, and which is relatively independent of dose. This lower-temperature release is predicted by TMAP if no traps are assumed, suggesting that this release may represent an adsorbed surface component

Raman spectroscopic study on sodium hyaluronate: an effect of proton and gamma irradiation

Czech Academy of Sciences Publication Activity Database

Synytsya, A.; Alexa, P.; Wagner, Richard; Davídková, Marie; Volka, K.

2011-01-01

Roč. 42, č. 3 (2011), s. 544-550 ISSN 0377-0486 Institutional research plan: CEZ:AV0Z10480505 Keywords : sodium hyaluronate * proton irradiation * gamma irradiation * Raman spectroscopy Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.087, year: 2011 http://onlinelibrary.wiley.com/doi/10.1002/jrs.2724/full

Mechanical properties of low temperature proton irradiated single crystal copper

International Nuclear Information System (INIS)

Schildcrout, M.

1975-01-01

Single crystal copper samples, of varying degrees of cold work, were irradiated near either liquid helium or liquid nitrogen temperature by 10.1-MeV protons. The internal friction and dynamic Young's modulus were observed as a function of either temperature or integrated proton flux. The primary effect of irradiation was to produce dislocation pinning. The initial pinning rate was found to be very sensitive to cold work. During irradiation it was found that heavily cold worked samples (25 percent compression) exhibited, almost exclusively, exponential pinning given by Y = e/sup --lambda phi/. This is attributed to the immobilization, rather than shortening, of loop lengths and is characterized by the pinning constant lambda. Exponential pinning was also found, to a smaller degree, in less heavily cold worked samples. Cold work appears to reduce the ''effective volume'' within which the defect clusters produced by irradiation, can immobilize dislocation segments. The bulk effect was observed after dislocation pinning was completed. Expressed in terms of the fractional change in Young's modulus per unit concentration of irradiation induced defects, it was measured at liquid helium temperature to be --18.5 +- 3. An anelastic process occurring near 10 0 K for low kHz frequencies and due to stress-induced ordering of point defects produced by irradiation has also been studied. The peak height per unit fluence was found to decrease with increasing cold work. The peak was not observed in samples compressed 25 percent. For the most carefully handled sample the activation energy was (1.28 +- 0.05) x 10 -2 eV, the attempt frequency was 10/sup 11.6 +- .8/ s -1 , the shape factor was 0.20, and the half width of the peak was 11 percent larger than the theoretical value calculated from the Debye equation for a single relaxation process

Microstructure of the irradiated U 3Si 2/Al silicide dispersion fuel

Science.gov (United States)

Gan, J.; Keiser, D. D.; Miller, B. D.; Jue, J.-F.; Robinson, A. B.; Madden, J. W.; Medvedev, P. G.; Wachs, D. M.

2011-12-01

The silicide dispersion fuel of U 3Si 2/Al is recognized as the best performance fuel for many nuclear research and test reactors with up to 4.8 gU/cm 3 fuel loading. An irradiated U 3Si 2/Al dispersion fuel ( 235U ˜ 75%) from the high-flux side of a fuel plate (U0R040) from the Reduced Enrichment for Research and Test Reactors (RERTR)-8 test was characterized using transmission electron microscopy (TEM). The fuel was irradiated in the Advanced Test Reactor (ATR) for 105 days. The average irradiation temperature and fission density of the U 3Si 2 fuel particles for the TEM sample are estimated to be approximately 110 °C and 5.4 × 10 27 f/m 3. The characterization was performed using a 200-kV TEM. The U/Si ratio for the fuel particle and (Si + Al)/U for the fuel-matrix-interaction layer are approximately 1.1 and 4-10, respectively. The estimated average diameter, number density and volume fraction for small bubbles (<1 μm) in the fuel particle are ˜94 nm, 1.05 × 10 20 m -3 and ˜11%, respectively. The results and their implication on the performance of the U 3Si 2/Al silicide dispersion fuel are discussed.

Simultaneous electron-proton irradiation of crucible grown and float-zone silicon solar cells

International Nuclear Information System (INIS)

Bernard, J.

1974-01-01

The realisation of an irradiation chamber which permits simultaneous irradiations by electrons, protons, photons and in-situ measurements of solar cells main parameters (diffusion length, I.V. characteristics) is described. Results obtained on 20 solar cells n/p 10Ωcm made in silicon pulled crystals and 20 solar cells n/p 10Ωcm made in silicon float-zone simultaneously irradiated with electrons and photons are given [fr

Impurities-Si interstitials interaction in Si doped with B or Ga during ion irradiation

International Nuclear Information System (INIS)

Romano, L; Piro, A M; Grimaldi, M G; Rimini, E

2005-01-01

Substitutional impurities (B, Ga) in Si experienced an off-lattice displacement during ion-irradiation using a H + or He + beam at room temperature in random incidence. Samples were prepared by solid phase epitaxy (SPE) of pre-amorphized Si subsequently implanted with B and Ga at a concentration of about 1 x10 20 at.cm -3 confined in a 300 nm thick surface region. The lattice location of impurities was performed by a channelling technique along different axes ( , ) using the 11 B(p,α) 8 Be reaction and standard RBS for B and Ga, respectively. The normalized channelling yield χ of the impurity signal increases with the ion fluence, indicating a progressive off-lattice displacement of the dopant during irradiation in random incidence, until it saturates at χ F I ) generated by the impinging beam in the doped region

Structural and optical modification in 4H-SiC following 30 keV silver ion irradiation

Science.gov (United States)

Kaushik, Priya Darshni; Aziz, Anver; Siddiqui, Azher M.; Lakshmi, G. B. V. S.; Syväjärvi, Mikael; Yakimova, Rositsa; Yazdi, G. Reza

2018-05-01

The market of high power, high frequency and high temperature based electronic devices is captured by SiC due to its superior properties like high thermal conductivity and high sublimation temperature and also due to the limitation of silicon based electronics in this area. There is a need to investigate effect of ion irradiation on SiC due to its application in outer space as outer space is surrounded both by low and high energy ion irradiations. In this work, effect of low energy ion irradiation on structural and optical property of 4H-SiC is investigated. ATR-FTIR is used to study structural modification and UV-Visible spectroscopy is used to study optical modifications in 4H-SiC following 30 keV Ag ion irradiation. FTIR showed decrease in bond density of SiC along the ion path (track) due to the creation of point defects. UV-Visible absorption spectra showed decrease in optical band gap from 3.26 eV to 2.9 eV. The study showed degradation of SiC crystallity and change in optical band gap following low energy ion irradiation and should be addressed while fabricationg devices based on SiC for outer space application. Additionally, this study provides a platform for introducing structural and optical modification in 4H-SiC using ion beam technology in a controlled manner.

A New High-intensity Proton Irradiation Facility at the CERN PS East Area

CERN Document Server

Gkotse, B; Lima, P; Matli, E; Moll, M; Ravotti, F

2014-01-01

and IRRAD2), were heavily and successfully used for irradiation of particle detectors, electronic components and materials since 1992. These facilities operated with particle bursts - protons with momentum of 24GeV/c - delivered from the PS accelerator in “spills” of about 400ms (slow extraction). With the increasing demand of irradiation experiments, these facilities suffered from a number of restrictions such as the space availability, the maximum achievable particle flux and several access constraints. In the framework of the AIDA project, an upgrade of these facilities has been realized during the CERN long shutdown (LS1). While the new proton facility (IRRAD) will continue to be mainly devoted to the radiation hardness studies for the High Energy Physics (HEP) experimental community, the new mixed-field facility (CHARM) will mainly host irradiation experiments for the validation of electronic systems used in a...

The RADEX facility as a tool for studies of radiation damage under proton and spallation neutron irradiation

Energy Technology Data Exchange (ETDEWEB)

Koptelov, E.A.; Lebedev, S.G.; Matveev, V.A.; Sobolevsky, N.M. [Institute for Nuclear Research of Russian Academy of Sciences, Moscow (Russian Federation); Strebkov, Yu.S.; Subbotin, A.V. [Research and Development Institute of Power Engineering, Moscow (Russian Federation)

2001-03-01

We present results of numerical modeling for processes of primary protons and spallation neutrons interactions with structural materials at the RADiation EXperiment facility of the Neutron Complex. The installation has a vertical irradiation channel inside the beam stop for horizontally incident protons with energies up to 600 MeV of the Moscow Meson Factory of the INR (Institute for Nuclear Research) RAS (Russian Academy of Science). The calculations are based on a set of computer codes SHIELD and RADDAM, which were developed in the INR RAS and give data on point defect generation by irradiation, rate of accumulation of H and He atoms produced in nuclear reactions, energetic spectra of primary knocked-off atoms in collision displacements, temperature of samples under irradiation. Different positions of the channel, which are available by rotation of a target relatively the vertical axis for angles 0, 60, 120 and 180 degrees to the proton beam direction, are considered. Changes of irradiation damage parameters due to various inputs of primary protons and spallation neutrons at different target orientations are demonstrated. It is shown also that the spallation neutron facility RADEX may provide with perspective experimental possibilities for modeling of irradiation conditions for fusion reactors ITER and DEMO. (author)

Defocusing beam line design for an irradiation facility at the TAEA SANAEM Proton Accelerator Facility

Science.gov (United States)

Gencer, A.; Demirköz, B.; Efthymiopoulos, I.; Yiğitoğlu, M.

2016-07-01

Electronic components must be tested to ensure reliable performance in high radiation environments such as Hi-Limu LHC and space. We propose a defocusing beam line to perform proton irradiation tests in Turkey. The Turkish Atomic Energy Authority SANAEM Proton Accelerator Facility was inaugurated in May 2012 for radioisotope production. The facility has also an R&D room for research purposes. The accelerator produces protons with 30 MeV kinetic energy and the beam current is variable between 10 μA and 1.2 mA. The beam kinetic energy is suitable for irradiation tests, however the beam current is high and therefore the flux must be lowered. We plan to build a defocusing beam line (DBL) in order to enlarge the beam size, reduce the flux to match the required specifications for the irradiation tests. Current design includes the beam transport and the final focusing magnets to blow up the beam. Scattering foils and a collimator is placed for the reduction of the beam flux. The DBL is designed to provide fluxes between 107 p /cm2 / s and 109 p /cm2 / s for performing irradiation tests in an area of 15.4 cm × 21.5 cm. The facility will be the first irradiation facility of its kind in Turkey.

Differential gene expression in primary fibroblasts induced by proton and cobalt-60 beam irradiation

DEFF Research Database (Denmark)

Nielsen, Steffen; Bassler, Niels; Grzanka, Leszek

2017-01-01

profile: entrance, mid-SOBP and at the SOBP distal edge. Dose was delivered in three fractions × 3.5 Gy(RBE) (RBE 1.1). Cobalt-60 (Co-60) irradiation was used as reference. Real-time qPCR was performed to determine gene expression levels for 17 genes associated with inflammation response, fibrosis...... and angiogenesis. RESULTS: Differences in median gene expression levels were observed for multiple genes such as IL6, IL8 and CXCL12. Median IL6 expression was 30%, 24% and 47% lower in entrance, mid-SOBP and SOBP distal edge groups than in Co-60 irradiated cells. No genes were found to be oppositely regulated...... fibroblast cultures. Inflammatory factors were generally less extensively upregulated by proton irradiation compared with Co-60 photon irradiation. These effects may possibly influence the development of normal tissue damage in patients treated with proton beam therapy....

Creation of 3D microsculptures in PMMA by multiple angle proton irradiation

International Nuclear Information System (INIS)

Andrea, T.; Rothermel, M.; Reinert, T.; Koal, T.; Butz, T.

2011-01-01

In recent years the technique of proton beam writing has established itself as a versatile method for the creation of microstructures in resist materials. While these structures can be almost arbitrary in two dimensions, the creation of genuine 3D structures remains a challenge. At the LIPSION accelerator facility a new approach has been developed which combines aspects of ion beam tomography, so far solely an analysis method, with proton beam writing. Key element is the targeted irradiation from multiple angles in order to obtain a much broader range of 3D microstructures than has hitherto been possible. PMMA columns with a diameter of ∼90 μm were used as raw material and placed in an upright position on top of a rotational axis. Using 2.25 MeV protons patterns corresponding to the silhouettes of the desired structures were written from two or more directions. In a subsequent step of chemical etching irradiated portions were dissolved, leaving behind the finished 3D sculpture. Various objects have been created. For the demonstration of the method a 70 μm high model of the Eiffel tower has been sculpted by irradiation from two angles. Using irradiation from three angles a 40 μm wide screw with right-handed thread could be crafted which might find applications in micromachining. Also, a cage structure with a pore size of ca. 20 μm was written with the intention to use it as a scaffold for the growth of biological cells.

Resistivity changes in superconducting-cavity-grade Nb following high-energy proton irradiation

International Nuclear Information System (INIS)

Snead, C.L. Jr.; Hanson, A.; Greene, G.A.

1997-01-01

Niobium superconducting rf cavities are proposed for use in the proton LINAC accelerators for spallation-neutron applications. Because of accidental beam loss and continual halo losses along the accelerator path, concern for the degradation of the superconducting properties of the cavities with accumulating damage arises. Residual-resistivity-ratio (RRR) specimens of Nb, with a range of initial RRR's were irradiated at room temperature with protons at energies from 200 to 2000 MeV. Four-probe resistance measurements were made at room temperature and at 4.2 K both prior to and after irradiation. Nonlinear increases in resistivity simulate expected behavior in cavity material after extended irradiation, followed by periodic anneals to room temperature: For RRR = 316 material, irradiations to (2 - 3) x 10 15 p/cm 2 produce degradations up to the 10% level, a change that is deemed operationally acceptable. Without. periodic warming to room temperature, the accumulated damage energy would be up to a factor of ten greater, resulting in unacceptable degradations. Likewise, should higher-RRR material be used, for the same damage energy imparted, relatively larger percentage changes in the RRR will result

Proton irradiation augments the reduction in tumor progression observed with advanced age

Data.gov (United States)

National Aeronautics and Space Administration — Proton irradiation is touted for its improved tumor targeting due to the physical advantages of ion beams for radiotherapy. Recent studies from our laboratory have...

Effects of neutron irradiation on thermal conductivity of SiC-based composites and monolithic ceramics

International Nuclear Information System (INIS)

Senor, D.J.; Youngblood, G.E.; Moore, C.E.; Trimble, D.J.; Woods, J.J.

1996-06-01

A variety of SiC-based composites and monolithic ceramics were characterized by measuring their thermal diffusivity in the unirradiated, thermal annealed, and irradiated conditions over the temperature range 400 to 1,000 C. The irradiation was conducted in the EBR-II to doses of 33 and 43 dpa-SiC (185 EFPD) at a nominal temperature of 1,000 C. The annealed specimens were held at 1,010 C for 165 days to approximately duplicate the thermal exposure of the irradiated specimens. Thermal diffusivity was measured using the laser flash method, and was converted to thermal conductivity using density data and calculated specific heat values. Exposure to the 165 day anneal did not appreciably degrade the conductivity of the monolithic or particulate-reinforced composites, but the conductivity of the fiber-reinforced composites was slightly degraded. The crystalline SiC-based materials tested in this study exhibited thermal conductivity degradation of irradiation, presumably caused by the presence of irradiation-induced defects. Irradiation-induced conductivity degradation was greater at lower temperatures, and was typically more pronounced for materials with higher unirradiated conductivity. Annealing the irradiated specimens for one hour at 150 C above the irradiation temperature produced an increase in thermal conductivity, which is likely the result of interstitial-vacancy pair recombination. Multiple post-irradiation anneals on CVD β-SiC indicated that a portion of the irradiation-induced damage was permanent. A possible explanation for this phenomenon was the formation of stable dislocation loops at the high irradiation temperature and/or high dose that prevented subsequent interstitial/vacancy recombination

Effects of neutron irradiation on thermal conductivity of SiC-based composites and monolithic ceramics

International Nuclear Information System (INIS)

Senor, D.J.; Youngblood, G.E.; Moore, C.E.; Trimble, D.J.; Woods, J.J.

1997-05-01

A variety of SiC-based composites and monolithic ceramics were characterized by measuring their thermal diffusivity in the unirradiated, thermal annealed, and irradiated conditions over the temperature range 400 to 1,000 C. The irradiation was conducted in the EBR-II to doses of 33 and 43 dpa-SiC (185 EFPD) at a nominal temperature of 1,000 C. The annealed specimens were held at 1,010 C for 165 days to approximately duplicate the thermal exposure of the irradiated specimens. Thermal diffusivity was measured using the laser flash method, and was converted to thermal conductivity using density data and calculated specific heat values. Exposure to the 165 day anneal did not appreciably degrade the conductivity of the monolithic or particulate-reinforced composites, but the conductivity of the fiber-reinforced composites was slightly degraded. The crystalline SiC-based materials tested in this study exhibited thermal conductivity degradation after irradiation, presumably caused by the presence of irradiation-induced defects. Irradiation-induced conductivity degradation was greater at lower temperatures, and was typically more pronounced for materials with higher unirradiated conductivity. Annealing the irradiated specimens for one hour at 150 C above the irradiation temperature produced an increase in thermal conductivity, which is likely the result of interstitial-vacancy pair recombination. Multiple post-irradiation anneals on CVD β-SiC indicated that a portion of the irradiation-induced damage was permanent. A possible explanation for this phenomenon was the formation of stable dislocation loops at the high irradiation temperature and/or high dose that prevented subsequent interstitial/vacancy recombination

Precipitate resolution in an electron irradiated ni-si alloy

Science.gov (United States)

Watanabe, H.; Muroga, T.; Yoshida, N.; Kitajima, K.

1988-09-01

Precipitate resolution processes in a Ni-12.6 at% Si alloy under electron irradiation have been observed by means of HVEM. Above 400°C, growth and resolution of Ni 3Si precipitates were observed simultaneously. The detail stereoscopic observation showed that the precipitates close to free surfaces grew, while those in the middle of a specimen dissolved. The critical dose when the precipitates start to shrink increases with increasing the depth. This depth dependence of the precipitate behavior under irradiation has a close relation with the formation of surface precipitates and the growth of solute depleted zone beneath them. The temperature and dose dependence of the resolution rate showed that the precipitates in the solute depleted zone dissolved by the interface controlled process of radiation-enhanced diffusion.

Short Communication on "In-situ TEM ion irradiation investigations on U3Si2 at LWR temperatures"

Science.gov (United States)

Miao, Yinbin; Harp, Jason; Mo, Kun; Bhattacharya, Sumit; Baldo, Peter; Yacout, Abdellatif M.

2017-02-01

The radiation-induced amorphization of U3Si2 was investigated by in-situ transmission electron microscopy using 1 MeV Kr ion irradiation. Both arc-melted and sintered U3Si2 specimens were irradiated at room temperature to confirm the similarity in their responses to radiation. The sintered specimens were then irradiated at 350 °C and 550 °C up to 7.2 × 1015 ions/cm2 to examine their amorphization behavior under light water reactor (LWR) conditions. U3Si2 remains crystalline under irradiation at LWR temperatures. Oxidation of the material was observed at high irradiation doses.

Positron annihilation and electron spin resonance studies of defects in electron-irradiated 3C-SiC

International Nuclear Information System (INIS)

Itoh, Hisayoshi; Yoshikawa, Masahito; Tanigawa, Shoichiro; Nashiyama, Isamu; Misawa, Shunji; Okumura, Hajime; Yoshida, Sadafumi.

1992-01-01

Defects induced by 1 MeV electron-irradiation in cubic silicon carbide (3C-SiC) epitaxially grown by chemical vapor deposition have been studied with positron annihilation and electron spin resonance (ESR). Doppler broadened energy spectra of annihilation γ-rays obtained by using variable-energy positron beams showed the formation of vacancy-type defects in 3C-SiC by the electron-irradiation. An ESR spectrum labeled Tl, which has an isotropic g-value of 2.0029 ± 0.001, was observed in electron-irradiated 3C-SiC. The Tl spectrum is interpreted by hyperfine interactions of paramagnetic electrons with 13 C at four carbon sites and 29 Si at twelve silicon sites, indicating that the Tl center arises from a point defect at a silicon site. Both the results can be accounted for by the introduction of isolated Si vacancies by the irradiation. (author)

Tribology of silicon-thin-film-coated SiC ceramics and the effects of high energy ion irradiation

International Nuclear Information System (INIS)

Kohzaki, Masao; Noda, Shoji; Doi, Harua

1990-01-01

The sliding friction coefficients and specific wear of SiC ceramics coated with a silicon thin film (Si/SiC) with and without subsequent Ar + irradiation against a diamond pin were measured with a pin-on-disk tester at room temperature in laboratory air of approximately 50% relative humidity without oil lubrication for 40 h. The friction coefficient of Ar + -irradiated Si/SiC was about 0.05 with a normal load of 9.8 N and remained almost unchanged during the 40 h test, while that of SiC increased from 0.04 to 0.12 during the test. The silicon deposition also reduced the specific wear of SiC to less than one tenth of that of the uncoated SiC. Effectively no wear was detected in Si/SiC irradiated to doses of over 2x10 16 ions cm -2 . (orig.)

Irradiation creep transients in Ni-4 at.% Si

International Nuclear Information System (INIS)

Nagakawa, J.

1983-01-01

In the course of irradiation creep experiments on Ni-4 at.% Si alloy, two types of creep transients were observed on the termination of irradiation. The short term transient was completed within one minute while the long term transient persisted for nearly ten hours. A change in the temperature distribution was excluded from the possible causes, partly because the stress dependence of the observed transient strains was not linear, and partly because the strain increase expected from the temperature change was much smaller than the observed value. Transient behavior of point defects was examined in conjunction with the climb-glide mechanism and the steady-state irradiation creep data. Calculated creep transient due to excess vacancy flux to dislocations was in good agreement with the observed short term transient. The long term transient appears to be a result of dislocation microstructure change. The present results suggest an enhanced irradiation creep under cyclic irradiation conditions which will be encountered in the early generations of fusion reactors. (orig.)

Retention and damage in 3C-β SiC irradiated with He and H ions

Energy Technology Data Exchange (ETDEWEB)

Deslandes, Alec, E-mail: alec.deslandes@csiro.au [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232 (Australia); Guenette, Mathew C. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232 (Australia); Thomsen, Lars [Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168 (Australia); Ionescu, Mihail; Karatchevtseva, Inna; Lumpkin, Gregory R. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232 (Australia)

2016-02-15

3C-β SiC was implanted with He and H ions using plasma immersion ion implantation (PIII). Regions of damage were created at various depths by applying a sample stage bias of 5 kV, 10 kV, 20 kV or 30 kV. Raman spectroscopy results indicate that He irradiation leads to more damage compared to H irradiation, as observed via increased disordered C and Si signals, as well as broadening of the SiC peaks. X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure spectroscopy (NEXAFS) results indicate significant change to the SiC structure and that surface oxidation has occurred following irradiation, with the degree of change varying dependent on impinging He fluence. The distributions of implanted species were measured using elastic recoil detection analysis. Despite the varying degree and depth of damage created in the SiC by the He ion irradiations, the retained H distribution was observed to not be affected by preceding He implantation.

Technique for measuring irradiation creep in polycrystalline SiC fibers

Energy Technology Data Exchange (ETDEWEB)

Youngblood, G.E.; Hamilton, M.L.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

1996-10-01

A bend stress relaxation (BSR) test has been designed to examine irradiation enhanced creep in polycrystalline SiC fibers being considered for fiber reinforcement in SiC/SiC composite. Thermal creep results on Nicalon-CG and Hi-Nicalon were shown to be consistent with previously published data with Hi-Nicalon showing about a 100{degrees}C improvement in creep resistance. Preliminary data was also obtained on Nicalon-S that demonstrated that its creep resistance is greater than that of Hi-Nicalon.

Enhanced defects recombination in ion irradiated SiC

International Nuclear Information System (INIS)

Izzo, G.; Litrico, G.; Grassia, F.; Calcagno, L.; Foti, G.

2010-01-01

Point defects induced in SiC by ion irradiation show a recombination at temperatures as low as 320 K and this process is enhanced after running current density ranging from 80 to 120 A/cm 2 . Ion irradiation induces in SiC the formation of different defect levels and low-temperature annealing changes their concentration. Some levels (S 0 , S x and S 2 ) show a recombination and simultaneously a new level (S 1 ) is formed. An enhanced recombination of defects is besides observed after running current in the diode at room temperature. The carriers introduction reduces the S 2 trap concentration, while the remaining levels are not modified. The recombination is negligible up to a current density of 50 A/cm 2 and increases at higher current density. The enhanced recombination of the S 2 trap occurs at 300 K, which otherwise requires a 400 K annealing temperature. The process can be related to the electron-hole recombination at the associated defect.

Proton Irradiation of CVD Diamond Detectors for High Luminosity Experiments at the LHC

CERN Document Server

Meier, D; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E A; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jany, C; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Knöpfle, K T; Krammer, Manfred; Manfredi, P F; Marshall, R D; Mishina, M; Le Normand, F; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Turchetta, R; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

1999-01-01

CVD diamond shows promising properties for use as a position sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardn ess of diamond we exposed CVD diamond detector samples to 24~GeV/$c$ and 500~MeV protons up to a fluence of $5\\times 10^{15}~p/{\\rm cm^2}$. We measured the charge collection distance, the ave rage distance electron hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to $1\\ times 10^{15}~p/{\\rm cm^2}$ and decreases by $\\approx$40~\\% at $5\\times 10^{15}~p/{\\rm cm^2}$. Leakage currents of diamond samples were below 1~pA before and after irradiation. The particle indu ced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage curren t. We conclude that CVD diamond detectors are radia...

SHI induced irradiation effect on Mo/Si interface

International Nuclear Information System (INIS)

Agarwal, Garima; Agarwal, Shivani; Jain, Rajkumar; Lal, Chhagan; Jain, I.P.; Kabiraj, D.; Pandey, Akhilesh

2006-01-01

Present parametric study investigates the characteristics of SHI induced mixed molybdenum silicide film with various ion fluences. The deposition of molybdenum thin films onto the Silicon substrate was performed using e-beam evaporation, while the heavy Au ion irradiation with energy 120 MeV was subsequently applied to form molybdenum silicide. The samples have been characterized by grazing incidence X-ray diffraction (GIXRD) for the identification of phase formation at the interface. Formation of t-Mo 5 Si 3 mixed molybdenum silicide was observed on increasing the ion irradiation fluences. (author)

Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes

Science.gov (United States)

Vigneshwara Raja, P.; Narasimha Murty, N. V. L.

2018-04-01

Deep level defects in 4H-SiC Schottky barrier diodes (SBDs) fabricated on n-type epitaxial 4H-SiC have been identified by thermally stimulated capacitance (TSCAP) spectroscopy prior to and after 60Co-gamma irradiation. The TSCAP measurements on the non-irradiated SBDs reveal two electron traps at Ec-0.63 eV (˜250 K) and Ec-1.13 eV (˜525 K), whereas only one trap at Ec-0.63 eV is identified by conventional thermally stimulated current (TSC) measurements. Hence, TSCAP spectroscopy is more effective in identifying deep level defects in epitaxial 4 H-SiC SBDs as compared to the TSC spectroscopy. Upon exposure to 60Co-gamma rays up to a dose of 100 Mrad, significant changes in the concentration of the traps at Ec-0.63 eV, Ec-1.13 eV, and one new trap at Ec-0.89 eV (˜420 K) are observed. The electrical characteristics of the SBDs are considerably changed after gamma irradiation. The dominant mechanisms responsible for the irradiation induced changes in the SBD electrical characteristics are analyzed by incorporating the trap signatures in the commercial Silvaco® TCAD device simulator. The extracted trap parameters of the irradiated SBDs may be helpful in predicting the survival of 4H-SiC SBD detectors at higher irradiation levels.

X-ray irradiation effects of interface traps and trapped-oxide charge at the Si-SiO{sub 2} interface of segmented silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Kopsalis, Ioannis; Fretwurst, Eckhart; Garutti, Erika; Klanner, Robert; Schwandt, Joern [Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg (Germany)

2016-07-01

The surface radiation damage of SiO{sub 2} grown on high-ohmic Si, as used for the fabrication of segmented silicon sensors, has been investigated. Circular p- and n-MOSFETs, biased in accumulation and inversion at a field in the SiO{sub 2} of about 500 kV/cm, have been irradiated by X-rays up to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation, the gate voltage has been cycled from inversion to accumulation conditions and back, and from the dependence of the drain-source current, on gate voltage, the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface determined. From the threshold voltage, the effective oxide-charge density is calculated. Using the subthreshold-current technique the contribution of interface traps, in the lower and the upper part of the energy Si bandgap, and of fixed oxide-charge to the effective oxide-charge density has been estimated. Results on the dose dependence of the above quantities, the charging-up and discharging of border traps when changing the gate voltage, and the hole and electron mobilities at the Si-SiO{sub 2} interface are presented.

Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process

International Nuclear Information System (INIS)

Goiffon, V.; Magnan, P.; Saint-Pe, O.; Bernard, F.; Rolland, G.

2009-01-01

Proton irradiation effects have been studied on CMOS image sensors manufactured in a 0.18μm technology dedicated to imaging. The ionizing dose and displacement damage effects were discriminated and localized thanks to 60 Co irradiations and large photodiode reverse current measurements. The only degradation observed was a photodiode dark current increase. It was found that ionizing dose effects dominate this rise by inducing generation centers at the interface between shallow trench isolations and depleted silicon regions. Displacement damages are is responsible for a large degradation of dark current non-uniformity. This work suggests that designing a photodiode tolerant to ionizing radiation can mitigate an important part of proton irradiation effects.

Surface damage on 6H–SiC by highly-charged Xeq+ ions irradiation

International Nuclear Information System (INIS)

Zhang, L.Q.; Zhang, C.H.; Han, L.H.; Xu, C.L.; Li, J.J.; Yang, Y.T.; Song, Y.; Gou, J.; Li, J.Y.; Ma, Y.Z.

2014-01-01

Surface damage on 6H–SiC irradiated by highly-charged Xe q+ (q = 18, 26) ions to different fluences in two geometries was studied by means of AFM, Raman scattering spectroscopy and FTIR spectrometry. The FTIR spectra analysis shows that for Xe 26+ ions irradiation at normal incidence, a deep reflection dip appears at about 930 cm −1 . Moreover, the reflectance on top of reststrahlen band decreases as the ion fluence increases, and the reflectance at tilted incidence is larger than that at normal incidence. The Raman scattering spectra reveal that for Xe 26+ ions at normal incidence, surface reconstruction occurs and amorphous stoichiometric SiC and Si–Si and C–C bonds are generated and original Si–C vibrational mode disappears. And the intensity of scattering peaks decreases with increasing dose. The AFM measurement shows that the surface swells after irradiation. With increasing ion fluence, the step height between the irradiated and the unirradiated region increases for Xe 18+ ions irradiation; while for Xe 26+ ions irradiation, the step height first increases and then decreases with increasing ion fluence. Moreover, the step height at normal incidence is higher than that at tilted incidence by the irradiation with Xe 18+ to the same ion fluence. A good agreement between the results from the three methods is found

Measurement of characteristic prompt gamma rays emitted from oxygen and carbon in tissue-equivalent samples during proton beam irradiation.

Science.gov (United States)

Polf, Jerimy C; Panthi, Rajesh; Mackin, Dennis S; McCleskey, Matt; Saastamoinen, Antti; Roeder, Brian T; Beddar, Sam

2013-09-07

The purpose of this work was to characterize how prompt gamma (PG) emission from tissue changes as a function of carbon and oxygen concentration, and to assess the feasibility of determining elemental concentration in tissues irradiated with proton beams. For this study, four tissue-equivalent water-sucrose samples with differing densities and concentrations of carbon, hydrogen, and oxygen were irradiated with a 48 MeV proton pencil beam. The PG spectrum emitted from each sample was measured using a high-purity germanium detector, and the absolute detection efficiency of the detector, average beam current, and delivered dose distribution were also measured. Changes to the total PG emission from (12)C (4.44 MeV) and (16)O (6.13 MeV) per incident proton and per Gray of absorbed dose were characterized as a function of carbon and oxygen concentration in the sample. The intensity of the 4.44 MeV PG emission per incident proton was found to be nearly constant for all samples regardless of their carbon concentration. However, we found that the 6.13 MeV PG emission increased linearly with the total amount (in grams) of oxygen irradiated in the sample. From the measured PG data, we determined that 1.64 × 10(7) oxygen PGs were emitted per gram of oxygen irradiated per Gray of absorbed dose delivered with a 48 MeV proton beam. These results indicate that the 6.13 MeV PG emission from (16)O is proportional to the concentration of oxygen in tissue irradiated with proton beams, showing that it is possible to determine the concentration of oxygen within tissues irradiated with proton beams by measuring (16)O PG emission.

Thermal shock testing of ceramics with pulsed laser irradiation

International Nuclear Information System (INIS)

Benz, R.; Naoumidis, A.; Nickel, H.

1986-04-01

Arguments are presented showing that the resistance to thermal stressing (''thermal shock'') under pulsed thermal energy deposition by various kinds of beam irradiations is approximately proportional to Φ a √tp, where Φ a is the absorbed power density and tp is the pulse length, under conditions of diffusivity controlled spreading of heat. In practical beam irradiation testing, incident power density, Φ, is reported. To evaluate the usefulness of Φ√tp as an approximation to Φ a √tp, damage threshold values are reviewed for different kinds of beams (electron, proton, and laser) for a range of tp values 5x10 -6 to 2 s. Ruby laser beam irradiation tests were made on the following ceramics: AlN, BN, graphite, αSiC, β-SiC coated graphites, (α+β)Si 3 N 4 , CVD (chemical vapor deposition) TiC coated graphite, CVD TiC coated Mo, and CVD TiN coated IN 625. The identified failure mechanisms are: 1. plastic flow followed by tensile and bend fracturing, 2. chemical decomposition, 3. melting, and 4. loss by thermal spallation. In view of the theoretical approximations and the neglect of reflection losses there is reasonable accord between the damage threshold Φ√tp values from the laser, electron, and proton beam tests. (orig./IHOE)

Post-irradiation examination of prototype Al-64 wt% U3Si2 fuel rods from NRU

International Nuclear Information System (INIS)

Sears, D.F.; Primeau, M.F.; Buchanan, C.; Rose, D.

1997-01-01

Three prototype fuel rods containing Al-64 wt% U 3 Si 2 (3.15 gU/cm 3 ) have been irradiated to their design burnup in the NRU reactor without incident. The fuel was fabricated using production-scale equipment and processes previously developed for Al-U 3 Si fuel fabrication at Chalk River Laboratories, and special equipment developed for U 3 Si 2 powder production and handling. The rods were irradiated in NRU up to 87 at% U-235 burnup under typical driver fuel conditions; i.e., nominal coolant inlet temperature 37 degrees C, inlet pressure 654 kPa, mass flow 12.4 L/s, and element linear power ratings up to 73 kW/m. Post-irradiation examinations showed that the fuel elements survived the irradiation without defects. Fuel core diametral increases and volumetric swelling were significantly lower than that of Al-61 wt% U 3 Si fuel irradiated under similar conditions. This irradiation demonstrated that the fabrication techniques are adequate for full-scale fuel manufacture, and qualified the fuel for use in AECL's research reactors

Electrical properties of as-grown and proton-irradiated high purity silicon

Energy Technology Data Exchange (ETDEWEB)

Krupka, Jerzy, E-mail: krupka@imio.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Karcz, Waldemar [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna (Russian Federation); Kamiński, Paweł [Institute of Electronic Materials Technology, Wólczyńska 13, 301-919 Warsaw (Poland); Jensen, Leif [Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund (Denmark)

2016-08-01

The complex permittivity of as-grown and proton-irradiated samples of high purity silicon obtained by the floating zone method was measured as a function of temperature at a few frequencies in microwave spectrum by employing the quasi TE{sub 011} and whispering gallery modes excited in the samples under test. The resistivity of the samples was determined from the measured imaginary part of the permittivity. The resistivity was additionally measured at RF frequencies employing capacitive spectroscopy as well as in a standard direct current experiment. The sample of as-grown material had the resistivity of ∼85 kΩ cm at room temperature. The sample irradiated with 23-MeV protons had the resistivity of ∼500 kΩ cm at 295 K and its behavior was typical of the intrinsic material at room and at elevated temperatures. For the irradiated sample, the extrinsic conductivity region is missing and at temperatures below 250 K hopping conductivity occurs. Thermal cycle hysteresis of the resistivity for the sample of as-grown material is observed. After heating and subsequent cooling of the sample, its resistivity decreases and then slowly (∼50 h) returns to the initial value.

CaO-Al2O3 glass-ceramic as a joining material for SiC based components: A microstructural study of the effect of Si-ion irradiation

Science.gov (United States)

Casalegno, Valentina; Kondo, Sosuke; Hinoki, Tatsuya; Salvo, Milena; Czyrska-Filemonowicz, Aleksandra; Moskalewicz, Tomasz; Katoh, Yutai; Ferraris, Monica

2018-04-01

The aim of this work was to investigate and discuss the microstructure and interface reaction of a calcia-alumina based glass-ceramic (CA) with SiC. CA has been used for several years as a glass-ceramic for pressure-less joining of SiC based components. In the present work, the crystalline phases in the CA glass-ceramic and at the CA/SiC interface were investigated and the absence of any detectable amorphous phase was assessed. In order to provide a better understanding of the effect of irradiation on the joining material and on the joints, Si ion irradiation was performed both on bulk CA and CA joined SiC. CA glass-ceramic and CA joined SiC were both irradiated with 5.1 MeV Si2+ ions to 3.3 × 1020 ions/m2 at temperatures of 400 and 800 °C at DuET facility, Kyoto University. This corresponds to a damage level of 5 dpa for SiC averaged over the damage range. This paper presents the results of a microstructural analysis of the irradiated samples as well as an evaluation of the dimensional stability of the CA glass-ceramic and its irradiation temperature and/or damage dependence.

Application of the Moessbauer spectroscopy to the investigation of the proton irradiation effects in several iron compounds

International Nuclear Information System (INIS)

Kopcewicz, M.; Kotlicki, A.

1975-01-01

The results of a study into the influence of proton irradiation on the Moessbauer effect in FeSO 4 x 7H 2 O, K 4 [Fe(CN) 6 ] x 3H 2 O and K 3 [Fe(CN) 6 ] are reported. In the interpretation of the effect observed, the 'spike' model was applied. Chemical decomposition processes due to proton irradiation and formation of the superparamagnetic state of metallic iron were investigated. A Moessbauer observation of interstitial Fe 2+ ions in irradiated FeSO 4 x 7H 2 O was made. (Z.S.)

Irradiation effects on high efficiency Si solar cells

International Nuclear Information System (INIS)

Nguyen Duy, T.; Amingual, D.; Colardelle, P.; Bernard, J.

1974-01-01

By optimizing the diffusion parameters, high efficiency cells are obtained with 2ohmsxcm (13.5% AMO) and 10ohmsxcm (12.5% AMO) silicon material. These new cells have been submitted to radiation tests under 1MeV, 2MeV electrons and 2.5MeV protons. Their behavior under irradiation is found to be dependent only on the bulk material. By using the same resistivity silicon, the rate of degradation is exactly the same than those of conventional cells. The power increase, due to a better superficial response of the cell, is maintained after irradiation. These results show that new high efficiency cells offer an E.O.L. power higher than conventional cells [fr

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Science.gov (United States)

Zhang, Z.; Cardwell, D.; Sasikumar, A.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

2016-04-01

The impact of proton irradiation on the threshold voltage (VT) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of VT was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 1014 cm-2. Silvaco Atlas simulations of VT shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different VT dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed VT shifts. The proton irradiation induced VT shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

Enhancements of the critical currents of YBaCuO single crystals by neutron (n) and proton (p) irradiation

International Nuclear Information System (INIS)

Vlcek, B.M.; Frischherz, M.C.; Vishwanathan, H.K.; Welp, U.; Crabtree, G.W.; Kirk, M.A.

1992-01-01

We present results of magnetization hysteresis and T c measurements of neutron and proton irradiated YBaCuO single crystals. The crystals used for comparison were irradiated to a fluence of 2x10 7 n/cm 2 (n,E > 0.1MeV) and 1x10 16 p/cm 2 (p,E=3.5MeV). The critical currents at 1T and 10K are enhanced by a factor of 5 for the neutron irradiated and a factor of 9 for the proton irradiated sample respectively. After irradiation the crystals were annealed at 100, 200 and 300C for 8h each in air. Following each annealing step the critical temperature and the magnetization hysteresis at 10 and 70K was measured. Upon annealing, we observe a decrease of the critical currents, which is more pronounced for the proton irradiated sample. This decrease is related to the removal of point defects or their small clusters. Thus, their contribution to pinning can be studied. The critical temperature decreases after both types of irradiation by about 0.5K and is fully recovered after annealing

Chemical changes in PMMA as a function of depth due to proton beam irradiation

International Nuclear Information System (INIS)

Szilasi, S.Z.; Huszank, R.; Szikra, D.; Vaczi, T.; Rajta, I.; Nagy, I.

2011-01-01

Highlights: → Chemical changes were investigated as a function of depth in proton irradiated PMMA → The depth profile of numerous functional groups was determined along the depth → The degree of chemical modification strongly depends on the LET of protons → At low-fluences the zone of maximal modification is restricted to the Bragg peak → At higher fluences the zone of max. modification extends towards the sample surface. - Abstract: In this work we determined depth profiles of the chemical change in PMMA irradiated with 2 MeV protons by infrared spectroscopic and micro-Raman measurements. The measurements were carried out on 10 μm thin stacked foil samples using an infrared spectrometer in universal attenuated total reflectance (UATR) and transmission modes; while the thick samples were analyzed with a confocal micro-Raman spectrometer. The depth profiles of the changes formed due to the various delivered fluences were compared to each other. The measurements show the strong dependence of the degree of modification on the energy transfer from the decelerating protons. Depth profiles reveal that at the fluences applied in this work the entire irradiated volume suffered some chemical modifications. In case of low-fluence samples the zone of maximal modification is restricted only to the Bragg peak, but with increasing fluences the region of maximal modification extends towards the sample surface.

Developments, characterization and proton irradiation damage tests of AlN detectors for VUV solar observations

Energy Technology Data Exchange (ETDEWEB)

BenMoussa, A., E-mail: ali.benmoussa@stce.be [Solar Terrestrial Center of Excellence (STCE), Royal Observatory of Belgium, Circular Avenue 3, B-1180 Brussels (Belgium); Soltani, A.; Gerbedoen, J.-C [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), F-59652 Villeneuve d’Ascq (France); Saito, T. [Department of Environment and Energy, Tohoku Institute of Technology, 35-1, Yagiyama-Kasumi-cho, Taihaku-ku, Sendai, Miyagi 982-8577 (Japan); Averin, S. [Fryazino Branch of the Kotel’nikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, 141190 Square Vvedenski 1, Fryazino, Moscow Region (Russian Federation); Gissot, S.; Giordanengo, B. [Solar Terrestrial Center of Excellence (STCE), Royal Observatory of Belgium, Circular Avenue 3, B-1180 Brussels (Belgium); Berger, G. [Catholic University of Louvain-la-Neuve, Chemin du Cyclotron 2, B-1348 Louvain la Neuve (Belgium); Kroth, U. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, D-10587 Berlin (Germany); De Jaeger, J.-C. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), F-59652 Villeneuve d’Ascq (France); Gottwald, A. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, D-10587 Berlin (Germany)

2013-10-01

For next generation spaceborne solar ultraviolet radiometers, innovative metal–semiconductor–metal detectors based on wurtzite aluminum nitride are being developed and characterized. A set of measurement campaigns and proton irradiation damage tests was carried out to obtain their ultraviolet-to-visible characterization and degradation mechanisms. First results on large area prototypes up to 4.3 mm diameter are presented here. In the wavelength range of interest, this detector is reasonably sensitive and stable under brief irradiation with a negligible low dark current (3–6 pA/cm{sup 2}). No significant degradation of the detector performance was observed after exposure to protons of 14.4 MeV energy, showing a good radiation tolerance up to fluences of 1 × 10{sup 11} protons/cm{sup 2}.

Parameters of compensating centers in n-type Si highly compensated by irradiation. Parametry kompensiruyushchikh tsentrov v n-Si sil'no kompensirovannym oblucheniem

Energy Technology Data Exchange (ETDEWEB)

Klinger, P M; Fistul' , V I [Moskovskij Gosudarstvennyj Univ., Moscow (USSR)

1990-06-01

Resuls of investigations into effect of {gamma}- and neutron irradiation on defect formation in high-ohmic n-Si

using technique of capacity temperature dependence (CTD) are given. Radiation dose varied from 4.8x10{sup 17} up to 1.7x10{sup 18} cm{sup -2}. CTD technique is shown to be successfully applied to investigate into defect formation at irradiation of highly compensated silicon. Rate of admission of Ec-0.40 eV deep acceptor levels in n-Si at pulsed electron irradiation does not depend on fine impurity cocentration. Positions of energy levels of deep acceptors introduced into n-Si do not coincide and constitute, respectively, E{sub c}-0.40 and E{sub c}-049 eV.

Effect of front and rear incident proton irradiation on silicon solar cells

Science.gov (United States)

Anspaugh, Bruce; Kachare, Ram

1987-01-01

Four solar cell types of current manufacture were irradiated through the front and rear surfaces with protons in the energy range between 1 and 10 MeV. The solar cell parameters varied for this study were cell thickness and back surface field (BSF) vs. no BSF. Some cells were irradiated at normal incidence and an equal number were irradiated with simulated isotropic fluences. The solar cell electrical characteristics were measured under simulated AM0 illumination after each fluence. Using the normal incidence data, proton damage coefficients were computed for all four types of cells for both normal and omnidirectional radiation fields. These were found to compare well with the omnidirectional damage coefficients derived directly from the rear-incidence radiation data. Similarly, the rear-incidence omnidirectional radiation data were used to compute appropriate damage coefficients. A method for calculating the effect of a spectrum of energies is derived from these calculations. It is suitable for calculating the degradation of cells in space when they have minimal rear-surface shielding.

Existence problem of proton semi-bubble structure in the 2{sub 1}{sup +} state of {sup 34}Si

Energy Technology Data Exchange (ETDEWEB)

Wu, Feng [China Institute of Atomic Energy, Beijing (China); Sichuan University, Key Laboratory of Radiation Physics and Technology of Ministry of Education, School of Physics Science and Technology, Chengdu (China); Bai, C.L. [Sichuan University, Key Laboratory of Radiation Physics and Technology of Ministry of Education, School of Physics Science and Technology, Chengdu (China); Yao, J.M. [University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC (United States); Southwest University, School of Physical Science and Technology, Chongqing (China); Zhang, H.Q.; Zhang, X.Z. [China Institute of Atomic Energy, Beijing (China)

2017-09-15

The fully self-consistent Hartree-Fock (HF) plus random phase approximation (RPA) based on Skyrme-type interaction is used to study the existence problem of proton semi-bubble structure in the 2{sub 1}{sup +} state of {sup 34}Si. The experimental excitation energy and the transition strength of the 2{sub 1}{sup +} state in {sup 34}Si can be reproduced quite well. The tensor effect is also studied. It is shown that the tensor interaction has a notable impact on the excitation energy of the 2{sub 1}{sup +} state and a small effect on the B(E2) value. Besides, its effect on the density distributions in the ground and 2{sub 1}{sup +} state of {sup 34}Si is negligible. Our present results with T36 and T44 show that the 2{sub 1}{sup +} state of {sup 34}Si is mainly caused by proton transition from π1d{sub 5/2} orbit to π2s{sub 1/2} orbit, and the existence of a proton semi-bubble structure in this state is very unlikely. (orig.)

Nanoindentation and in situ microcompression in different dose regimes of proton beam irradiated 304 SS

Energy Technology Data Exchange (ETDEWEB)

Reichardt, A. [Department of Nuclear Engineering, University of California, Berkeley, CA (United States); Lupinacci, A. [National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Frazer, D.; Bailey, N.; Vo, H.; Howard, C. [Department of Nuclear Engineering, University of California, Berkeley, CA (United States); Jiao, Z. [Department of Nuclear Engineering, University of Michigan, Ann Arbor, MI (United States); Minor, A.M. [National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Chou, P. [Electric Power Research Institute, Palo Alto, CA (United States); Hosemann, P., E-mail: peterh@berkeley.edu [Department of Nuclear Engineering, University of California, Berkeley, CA (United States)

2017-04-01

Recent developments in micromechanical testing have allowed for the efficient evaluation of radiation effects in micron-scale volumes of ion-irradiated materials. In this study, both nanoindentation and in situ SEM microcompression testing are carried out on 10 dpa proton beam irradiated 304 stainless steel to assess radiation hardening and radiation-induced deformation mechanisms in the material. Using a focused ion beam (FIB), arrays of 2 μm × 2 μm cross-section microcompression pillars are fabricated in multiple dose regimes within the same grain, providing dose-dependent behavior in a single crystal orientation. Analysis of the microcompression load-displacement data and real-time SEM imaging during testing indicates significant hardening, as well as increased localization of deformation in the irradiated material. Although nanoindentation results suggest that irradiation hardening saturates at low doses, microcompression results indicate that the pillar yield stress continues to rise with dose above 10 dpa in the tested orientation. - Highlights: •Mechanical properties are probed in small volumes of proton irradiated 304SS. •Nanoindentation indicates saturation of irradiation hardening at doses of 5–10 dpa. •Microcompression of irradiated specimens suggest localized deformation.

Influence of the interface on the magnetic properties of NiZn ferrite thin films treated by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Jiang, X.D. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Guo, D.W. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Zhang, C.H., E-mail: c.h.zhang@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Fan, X.L.; Chai, G.Z. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Xue, D.S., E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

2015-09-01

In order to systematically investigate the influence of the interface on the magnetic properties, polycrystalline NiZn ferrite thin films were irradiated with 60 keV proton in the dose range from 5 × 10{sup 12} to 5 × 10{sup 16} ions/cm{sup 2}. A non-destructive approach by proton irradiation was found to finely adjust the magnetic properties of polycrystalline NiZn ferrite thin films such as coercivity, perpendicular magnetic anisotropy as well as the effective g value. The coercivity is about 725 Oe for high proton dose ferrite, which is twice larger than the unirradiated one. The ferromagnetic resonance measurements indicated that perpendicular magnetic anisotropy and the effective g value increase with the irradiation dose. Our finding indicates that all modifications of these magnetic properties were associated with the change of interface due to the diffusion and the stress induced by proton irradiation. The change of the effective g value is a result of lattice expansion and the decrease of the magnetic dipole interaction between the columnar grains. This work provides a feasible way to tailor the magnetic properties of thin films by ion irradiation and promotes investigations for the stability of magnetic thin film devices in space or unclear radiation environments.

Permeability coefficient of proton irradiated polyethylene terephatalate thin films

International Nuclear Information System (INIS)

Bassani, L.C.; Santos, W.M.S.; Marechal, B.

1983-01-01

The principle of operation of an apparatus developed to study gas permation through thin films is described and the measurement method is discussed. Use is made of diffusion theory to obtain a expression for the permeability coefficient as a function of the rate of increase of the pressure in the receiving volume. The Gibbs function for permeation of Helium through Polyethylene Terephtalate (P.E.T.) is determined. The permeability coefficient of Helium is found to increase significantly with the range of the implanted protons although the incident charge has been kept constant. The hypothesis of structural modifications of the proton implanted P.E.T. seems to be confirmed by small angles X-rays scattering experiments on the irradiated samples. (Author) [pt

Irradiation induced improvement in crystallinity of epitaxially grown Ag thin films on Si substrates

Energy Technology Data Exchange (ETDEWEB)

Takahiro, Katsumi; Nagata, Shinji; Yamaguchi, Sadae [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

1997-03-01

We report the improvement in crystallinity of epitaxially grown Ag films on Si(100) substrates with ion irradiation. The irradiation of 0.5 MeV Si ions to 2x10{sup 16}/cm{sup 2} at 200degC, for example, reduces the channeling minimum yield from 60% to 6% at Ag surface. The improvement originates from the decrease of mosaic spread in the Ag thin film. In our experiments, ion energy, ion species and irradiation temperature have been varied. The better crystallinity is obtained as the higher concentration of defect is generated. The mechanism involved in the irradiation induced improvement is discussed. (author)

Structural and defects induced phenomena in γ-rays irradiated 6H-SiC

International Nuclear Information System (INIS)

Sibuyi, P.; Ngom, B.D.; Kotsedi, L.

2016-01-01

Damages and/or defects induced by γ-rays irradiation on 6H-SiC single crystals in channeled configuration towards 〈006〉/〈0012〉 crystallographic directions are reported in the range of 0–1200 kGy. Atomic force microscopy, X-rays diffraction, Raman and photoluminescence investigations were used to obtain a comprehensive set of informations on the nature and population distribution of the induced defects. Primarily, there was no carbon clusterization upon γ-rays irradiation and hence no formation of others SiC polytypes. In contrast, the γ-rays irradiation has induced an increase of the surface roughness at higher doses, which indicates a structural degradation. Larger doses induced an emergence of deeper shallow traps at energies greater than 350 meV below the bandgap. - Highlights: • No formation of others SiC polytypes. • The gamma rays irradiation has induced a slight surface amorphization. • A re-crystallization at lower and higher doses is noticed. • Larger doses induced a substantial internal stress.

Synthesizing single-phase β-FeSi2 via ion beam irradiations of Fe/Si bilayers

International Nuclear Information System (INIS)

Milosavljevic, M.; Dhar, S.; Schaaf, P.; Bibic, N.; Lieb, K.P.

2001-01-01

This paper presents results on the direct synthesis of the β-FeSi 2 phase by ion beam mixing of Fe/Si bilayers with Xe ions. The influence of the substrate temperature, ion fluence and energy on the growth of this phase was investigated using Rutherford backscattering (RBS), X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). Complete growth of single-phase β-FeSi 2 was achieved by 205 keV Xe ion irradiation to a fluence of 2x10 16 ions/cm 2 at 600 deg. C. We propose a two-step reaction mechanism involving thermal and ion beam energy deposition

Fourier transform infrared spectroscopic study of gamma irradiated SiO2 nanoparticles

Science.gov (United States)

Huseynov, Elchin; Garibov, Adil; Mehdiyeva, Ravan; Huseynova, Efsane

2018-03-01

In the present work, nano SiO2 particles are investigated before and after gamma irradiation (25, 50, 75, 100 and 200 kGy) using Fourier transform infrared (FTIR) spectroscopy method for the wavenumber between 400-4000 cm-1. It is found that as a result of spectroscopic analysis, five new peaks have appeared after gamma radiation. Two of new obtained peaks (which are located at 687 cm-1 and 2357 cm-1 of wavenumber) were formed as a result of gamma radiation interaction with Si-O bonds. Another three new peaks (peaks appropriate to 941, 2052 and 2357 cm-1 values of wavenumber) appear as a result of interaction of water with nano SiO2 particles after gamma irradiation. It has been defined as asymmetrical bending vibration, symmetrical bending vibration, symmetrical stretching vibration and asymmetrical stretching vibration of Si-O bonds appropriate to peaks.

Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors

International Nuclear Information System (INIS)

Banerjee, G.; Niu, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Ahlgren, D.C.

1999-01-01

Low dose rate (LDR) cobalt-60 (0.1 rad(Si)/s) gamma irradiated Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) were studied. Comparisons were made with devices irradiated with 300 rad(Si)/s gamma radiation to verify if LDR radiation is a serious radiation hardness assurance (RHA) issue. Almost no LDR degradation was observed in this technology up to 50 krad(Si). The assumption of the presence of two competing mechanisms is justified by experimental results. At low total dose (le20 krad), an anomalous base current decrease was observed which is attributed to self-annealing of deep-level traps to shallower levels. An increase in base current at larger total doses is attributed to radiation induced generation-recombination (G/R) center generation. Experiments on gate-assisted lateral PNP transistors and 2D numerical simulations using MEDICI were used to confirm these assertions

Measurement of L X-ray intensity ratios in tantalum by proton and Si-ion impact

International Nuclear Information System (INIS)

Braich, J.S.; Dhal, B.B.; Singh, B.P.; Padhi, H.C.; Khurana, C.S.; Verma, H.R.

1996-01-01

The Lι, Lβ 1,4,6 , Lβ 2,15,3 , Lγ 1 , Lγ 2,3,6 and Lγ 4,4' , X-ray intensities relative to the Lα, caused by the impact of protons of energy 1 to 4.6 MeV and Si-ions of 70 to 98 MeV on Ta targets, h ave been measured. The results show that the intensity ratios drop significantly for all transitions except Lγ 2,3,6 /Lα with Si-ions of the same energy/amu as compared to those of protons. The experimental results have been compared with those based on the ECPSSR theoretical values. From the energy shift and change in the intensity ratios of various transitions caused by Si-ion impact, the number of outer shell vacancies in the M, N and O-shells simultaneous to that of L-shell have been estimat ed. (orig.)

Defocusing beam line design for an irradiation facility at the TAEA SANAEM Proton Accelerator Facility

CERN Document Server

Gencer, A.; Efthymiopoulos, I.; Yiğitoğlu, M.

2016-01-01

Electronic components must be tested to ensure reliable performance in high radiation environments such as Hi-Limu LHC and space. We propose a defocusing beam line to perform proton irradiation tests in Turkey. The Turkish Atomic Energy Authority SANAEM Proton Accelerator Facility was inaugurated in May 2012 for radioisotope production. The facility has also an R&D room for research purposes. The accelerator produces protons with 30 MeV kinetic energy and the beam current is variable between View the MathML source10μA and View the MathML source1.2mA. The beam kinetic energy is suitable for irradiation tests, however the beam current is high and therefore the flux must be lowered. We plan to build a defocusing beam line (DBL) in order to enlarge the beam size, reduce the flux to match the required specifications for the irradiation tests. Current design includes the beam transport and the final focusing magnets to blow up the beam. Scattering foils and a collimator is placed for the reduction of the beam ...

Positron trap centers in x-ray and γ-ray irradiated SiO2

International Nuclear Information System (INIS)

Khatri, R.; Asoka-Kumar, P.; Nielsen, B.; Roellig, L.O.; Lynn, K.G.

1993-01-01

Using Doppler broadening annihilation spectroscopy, we investigated the properties of irradiated samples of SiO 2 /Si(100) with 117 nm thick oxide layer, grown in dry O 2 on p- and n-type substrates. These samples were irradiated with γ rays and x rays at doses in the range of 7x10 4 --9x10 6 rad and 50--2000 mJ/cm 2 , respectively. The changes observed in the Doppler broadening line shape parameter after irradiation and its recovery during isochronal annealing were used to obtain an activation energy of 1.48--1.61 eV required for annealing the defects

Influence of gamma-ray irradiation on 6H-SiC MOSFETs

International Nuclear Information System (INIS)

Ohshima, Takeshi; Yoshikawa, Masahito; Itoh, Hisayoshi; Nashiyama, Isamu; Okada, Sohei

1998-01-01

Enhancement-type n-channel MOSFETs were fabricated on 6H-SiC epitaxial films using pyrogenic or dry oxidation process. Oxide-trapped charges and interface traps produced in 6H-Sic MOSFETs by gamma-ray irradiation are evaluated from changes in the subthreshold-current curve. The net numbers of radiation-induced-oxide-trapped charges and interface traps depend on the oxidation process. The 6H-SiC MOSFETs exhibit higher radiation resistance than Si MOSFETs. (author)

Enhanced light scattering in Si nanostructures produced by pulsed laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Sberna, P. M.; Scapellato, G. G.; Boninelli, S.; Miritello, M.; Crupi, I.; Bruno, E.; Privitera, V.; Simone, F.; Mirabella, S. [MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Piluso, N. [IMM-CNR, VIII strada 5, 95121 Catania (Italy)

2013-11-25

An innovative method for Si nanostructures (NS) fabrication is proposed, through nanosecond laser irradiation (λ = 532 nm) of thin Si film (120 nm) on quartz. Varying the laser energy fluences (425–1130 mJ/cm{sup 2}) distinct morphologies of Si NS appear, going from interconnected structures to isolated clusters. Film breaking occurs through a laser-induced dewetting process. Raman scattering is enhanced in all the obtained Si NS, with the largest enhancement in interconnected Si structures, pointing out an increased trapping of light due to multiple scattering. The reported method is fast, scalable and cheap, and can be applied for light management in photovoltaics.

Measurement and investigation of proton irradiation-induced charge transfer inefficiency in PPD CIS at different integration times

Science.gov (United States)

Xue, Yuanyuan; Wang, Zujun; Zhang, Fengqi; Bian, Jingying; Yao, Zhibin; He, Baoping; Liu, Minbo; Sheng, Jiangkun; Ma, Wuying; Dong, Guantao; Jin, Junshan

2018-04-01

Charge transfer inefficiency (CTI) is an important parameter for photodiode (PPD) CMOS image sensors (CISs). A test system was built and used to measure the CTI of PPD CIS devices at different integration times. The radiation effects of 3 MeV and 10 MeV protons on the CTI were investigated. The experiments were carried out at the EN Tandem Van de Graaff accelerator at proton fluences in the range 1010 to 1011 p/cm2. The CTI was measured within the 2 h following proton radiations. The dependence of CTI on integration time, proton energy and fluence were investigated. The CTI was observed to increase after proton irradiation: with the effect of irradiation with 3 MeV proton being more severe than that with 10 MeV protons. The CTI was also observed to decrease with increasing integration time, which is thought to be related to the charge density in the space charge region (SCR) of the CIS devices. This work has provided a simple method to measure the CTI and helped us to understand proton radiation effects on the CTI of PPD CISs.

Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors.

Science.gov (United States)

Yang, Gwangseok; Jang, Soohwan; Ren, Fan; Pearton, Stephen J; Kim, Jihyun

2017-11-22

The robust radiation resistance of wide-band gap materials is advantageous for space applications, where the high-energy particle irradiation deteriorates the performance of electronic devices. We report on the effects of proton irradiation of β-Ga 2 O 3 nanobelts, whose energy band gap is ∼4.85 eV at room temperature. Back-gated field-effect transistor (FET) based on exfoliated quasi-two-dimensional β-Ga 2 O 3 nanobelts were exposed to a 10 MeV proton beam. The proton-dose- and time-dependent characteristics of the radiation-damaged FETs were systematically analyzed. A 73% decrease in the field-effect mobility and a positive shift of the threshold voltage were observed after proton irradiation at a fluence of 2 × 10 15 cm -2 . Greater radiation-induced degradation occurs in the conductive channel of the β-Ga 2 O 3 nanobelt than at the contact between the metal and β-Ga 2 O 3 . The on/off ratio of the exfoliated β-Ga 2 O 3 FETs was maintained even after proton doses up to 2 × 10 15 cm -2 . The radiation-induced damage in the β-Ga 2 O 3 -based FETs was significantly recovered after rapid thermal annealing at 500 °C. The outstanding radiation durability of β-Ga 2 O 3 renders it a promising building block for space applications.

Electrochemical behaviour of gold and stainless steel under proton irradiation and active RedOx couples

Energy Technology Data Exchange (ETDEWEB)

Leoni, E. [Commissariat a l' Energie Atomique, DEN/DANS/DPC/SCCME, CEA-Saclay, 91191 Gif sur Yvette (France)], E-mail: elisa.leoni@polytechnique.edu; Corbel, C. [Laboratoire des Solides Irradies, Ecole Polytechnique, 91128 Palaiseau (France)], E-mail: catherine.corbel@polytechnique.fr; Cobut, V. [Laboratoire Atomes et Molecules en Astrophysique, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville/Oise, 95031 Cergy-Pontoise Cedex (France); Simon, D. [CNRS-CERI 3a rue de la Ferollerie, 45071 Cedex 2 Orleans (France); Feron, D. [Commissariat a l' Energie Atomique, DEN/DANS/DPC/SCCME, CEA-Saclay, 91191 Gif sur Yvette (France)], E-mail: Damien.FERON@cea.fr; Roy, M.; Raquet, O. [Commissariat a l' Energie Atomique, DEN/DANS/DPC/SCCME, CEA-Saclay, 91191 Gif sur Yvette (France)

2007-12-01

Model experiments are reported where proton beams delivered by the cyclotron located at CERI (CNRS-Orleans) are used for irradiating AISI 316L/water and Au/water high purity interfaces with 6 MeV protons. The free exchange potentials at the interfaces are recorded as a function of time at room temperature in situ before, under, and after proton irradiation. The evolutions are compared to those calculated for the Nernst potentials associated with the radiolytic RedOx couples. It is shown how the comparison gives evidence that five radiolytic species - O{sub 2}{center_dot}, H{sub 2}O{sub 2}, HO{sub 2}{sup -}, HO{sub 2}{center_dot} and O{sub 2}{center_dot}{sup -} exchange electrons at the Au interfaces in a range of dose rates that vary over three orders of magnitudes, i.e. 0.0048 < dr(10{sup 7} Gy h{sup -1}) < 4.8. The balance between the electron exchanges at Au interfaces is adjusted by the RedOx reactions associated with the above species. The free exchange potential reaches the same steady value for Au and AISI 316L interfaces irradiated at high doses, {>=}2.5 x 10{sup 7} Gy, (0.020 {+-} 0.025) V versus NHE. Such low values are the first ones to be reported. The HO{sub 2}{center_dot} and O{sub 2}{center_dot}{sup -} radical disproportionations play a key role and control the potential at the interfaces under 6 MeV proton flux. This role is generally mostly overlooked for gamma irradiation.

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Energy Technology Data Exchange (ETDEWEB)

Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A., E-mail: ringel.5@osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Kyle, E. C. H.; Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States); Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D. [Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)

2016-04-28

The impact of proton irradiation on the threshold voltage (V{sub T}) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V{sub T} was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10{sup 14} cm{sup −2}. Silvaco Atlas simulations of V{sub T} shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V{sub T} dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V{sub T} shifts. The proton irradiation induced V{sub T} shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A.; Kyle, E. C. H.; Speck, J. S.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.

2016-01-01

The impact of proton irradiation on the threshold voltage (V T ) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V T was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10 14  cm −2 . Silvaco Atlas simulations of V T shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V T dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V T shifts. The proton irradiation induced V T shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

Investigation of the effects of high-energy proton-beam irradiation on metal-oxide surfaces by using methane adsorption isotherms

International Nuclear Information System (INIS)

Kim, Euikwoun; Lee, Junggil; Kim, Jaeyong; Kim, Kyeryung

2012-01-01

The creation of possible local defects on metal-oxide surfaces due to irradiation with a high-energy proton beam was investigated by using a series of gas adsorption isotherms for methane (CH 4 ) on a MgO powder surface. After a MgO powder surface having only a (100) surface had been irradiated with a 35-MeV proton beam, the second atomic layer of methane had completely disappeared while two distinct atomic layers were found in a layer-by-layer fashion on the surfaces of unirradiated samples. This subtle modification of the surface is evidenced by a change of the contrasts in the morphologies measured a using a transmission electron microscopy. Combined results obtained from an electron microscopy and methane adsorption isotherms strongly suggest that the high-energy proton-beam irradiation induced a local surface modification by imparting kinetic energy to the sample. The calculation of the 2-dimensional compressibility values, which are responsible for the formation of the atomic layers, confirmed the surface modification after irradiating surface-clean MgO powders with a proton beam.

A study of proton polarization in ammonia (NH sub 3 ) under irradiation and annealing

Energy Technology Data Exchange (ETDEWEB)

Belyaev, A.A.; Get' man, V.A.; Dzyubak, A.P.; Karnaukhov, I.M.; Lukhanin, A.A.; Neffa, A.Yu.; Semisalov, I.L.; Sorokin, P.V.; Sporov, E.S.; Telegin, Yu.N.; Tolmachev, I.A.; Trotsenko, V.I. (Kharkov Institute of Physics and Technology, Ukrainian SSR, Academy of Sciences, 310108 Kharkov, USSR (UA))

1989-05-05

The proton polarization in irradiated NH{sub 3} has been measured as a function of the irradiation dose and annealing temperature. The analysis of the experimental data obtained shows that under low-temperature'' irradiation along with the NH{sup {minus}}{sub 2} the e{sub tr}-radical is likely to be formed which contributes to the polarization build-up and relaxation and influences the radiation damage resistance of the target.

Recovery behavior of high purity cubic SiC polycrystals by post-irradiation annealing up to 1673 K after low temperature neutron irradiation

Energy Technology Data Exchange (ETDEWEB)

Idris, Mohd Idzat, E-mail: idzat.i.aa@m.titech.ac.jp [Department of Nuclear Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8550 Japan (Japan); The National University of Malaysia, School of Applied Physics, Faculty of Science and Technology, 43600 Bangi Selangor (Malaysia); Yamazaki, Saishun; Yoshida, Katsumi; Yano, Toyohiko [Research Laboratory for Nuclear Reactors, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8550 Japan (Japan)

2015-10-15

Two kinds of high purity cubic (β) SiC polycrystals, PureBeta-SiC and CVD-SiC, were irradiated in the BR2 reactor (Belgium) up to a fluence of 2.0–2.5 × 10{sup 24} (E > 0.1 MeV) at 333–363 K. Changes in macroscopic lengths were examined by post-irradiation thermal annealing using a precision dilatometer up to 1673 K with a step-heating method. The specimen was held at each temperature step for 6 h and the change in length of the specimen was recorded during each isothermal annealing step from 373 K to 1673 K with 50 K increments. The recovery curves were analyzed with the first order model, and rate constants at each annealing step were obtained. Recovery of defects, induced by neutron irradiation in high purity β-SiC, has four stages of different activation energies. At 373–573 K, the activation energy of PureBeta-SiC and CVD-SiC was in the range of 0.17–0.24 eV and 0.12–0.14 eV; 0.002–0.04 eV and 0.006–0.04 eV at 723–923 K; 0.20–0.27 eV and 0.26–0.31 eV at 923–1223 K; and 1.37–1.38 eV and 1.26–1.29 eV at 1323–1523 K, respectively. Below ∼1223 K the recombination occurred possibly for closely positioned C and Si Frenkel pairs, and no long range migration is deemed essential. Nearly three-fourths of recovery, induced by neutron irradiation, occur by this mechanism. In addition, at 1323–1523 K, recombination of slightly separated C Frenkel pairs and more long-range migration of Si interstitials may have occurred for PureBeta-SiC and CVD-SiC specimens. Migration of both vacancies may be restricted up to ∼1523 K. Comparing to hexagonal α-SiC, high purity β-SiC recovered more quickly in the lower annealing temperature range of less than 873 K, in particular less than 573 K. - Highlights: • Two kinds of high purity cubic (β) SiC polycrystals were irradiated. • Macroscopic lengths were examined by post-irradiation thermal annealing. • The recovery curves were analyzed with first order model. �

Projection of the annealing behavior of irradiated Si sensors in the LHC environment

CERN Document Server

Chatterji, S; Bhardwaj, N; Chauhan, S S; Choudhary, B C; Gupta, P; Jha, M; Kumar, A; Naimuddin, M; Ranjan, K; Shivpuri, R K; Srivastava-Ajay, K

2004-01-01

The study of the radiation tolerance and subsequent annealing effects on p+-n-n+ silicon micro strip detectors has been performed as a part of R&D program for the preshower detector in the CMS experiment. CMS silicon strip sensors were irradiated with 24 GeV protons at CERN proton synchrotron (PS) to a total fluence of 3*10/sup 14/ p/cm/sup 2 /. Sensors were stored in freezer after irradiation and I-V and C-V measurements were carried out. Variation in full depletion voltage and leakage current have been studied as a function of annealing time. The breakdown performance of the device actually improves after irradiation due to the beneficial effect of type-inversion. The breakdown voltage increases further with annealing time. However, the leakage current increases tremendously just after irradiation. As the sensors are annealed, there is a drop in leakage current. The rate of annealing is observed to be temperature dependent. Hence in terms of leakage current, it seems that room temperature annealing is b...

Dosimetric comparison of proton and photon three-dimensional, conformal, external beam accelerated partial breast irradiation techniques

International Nuclear Information System (INIS)

Kozak, Kevin R.; Katz, Angela; Adams, Judith C.; Crowley, Elizabeth M.; Nyamwanda, Jacqueline A.C.; Feng, Jennifer K.C.; Doppke, Karen P.; DeLaney, Thomas F.; Taghian, Alphonse G.

2006-01-01

Purpose: To compare the dosimetry of proton and photon-electron three-dimensional, conformal, external beam accelerated partial breast irradiation (3D-CPBI). Methods and Materials: Twenty-four patients with fully excised, Stage I breast cancer treated with adjuvant proton 3D-CPBI had treatment plans generated using the mixed-modality, photon-electron 3D-CPBI technique. To facilitate dosimetric comparisons, planning target volumes (PTVs; lumpectomy site plus 1.5-2.0 cm margin) and prescribed dose (32 Gy) were held constant. Plans were optimized for PTV coverage and normal tissue sparing. Results: Proton and mixed-modality plans both provided acceptable PTV coverage with 95% of the PTV receiving 90% of the prescribed dose in all cases. Both techniques also provided excellent dose homogeneity with a dose maximum exceeding 110% of the prescribed dose in only one case. Proton 3D-CPBI reduced the volume of nontarget breast tissue receiving 50% of the prescribed dose by an average of 36%. Statistically significant reductions in the volume of total ipsilateral breast receiving 100%, 75%, 50%, and 25% of the prescribed dose were also observed. The use of protons resulted in small, but statistically significant, reductions in the radiation dose delivered to 5%, 10%, and 20% of ipsilateral and contralateral lung and heart. The nontarget breast tissue dosimetric advantages of proton 3D-CPBI were not dependent on tumor location, breast size, PTV size, or the ratio of PTV to breast volume. Conclusions: Compared to photon-electron 3D-CPBI, proton 3D-CPBI significantly reduces the volume of irradiated nontarget breast tissue. Both approaches to accelerated partial breast irradiation offer exceptional lung and heart sparing

The gas bubbles distribution in 600 MeV protons irradiated aluminium

International Nuclear Information System (INIS)

Gavillet, D.; Martin, J.L.; Victoria, M.; Green, W.

1984-01-01

In order to simulate the damage produced by 14 MeV fusion neutrons, thin foils of high purity Al have been irradiated by a proton beam of 580 MeV (120μA). After irradiation at temperatures higher than 0.5 Tm transmission electron microscope observations of gas bubbles distribution were performed. At 200 0 C a uniform distribution of bubbles has been observed inside the grain. The average distance between bubbles and their density have been determined. The gas pressure inside the bubbles has been estimated [fr

Study of crosslinking onset and hydrogen annealing of ultra-high molecular weight polyethylene irradiated with high-energy protons

Science.gov (United States)

Wilson, John Ford

1997-09-01

Ultra high molecular weight polyethylene (UHMW-PE) is used extensively in hip and knee endoprostheses. Radiation damage from the sterilization of these endoprostheses prior to surgical insertion results in polymer crosslinking and decreased oxidative stability. The motivation for this study was to determine if UHMW-PE could be crosslinked by low dose proton irradiation with minimal radiation damage and its subsequent deleterious effects. I found that low dose proton irradiation and post irradiation hydrogen annealing did crosslink UHMW-PE and limit post irradiation oxidation. Crosslinking onset was investigated for UHMW-PE irradiated with 2.6 and 30 MeV H+ ions at low doses from 5.7 × 1011-2.3 × 1014 ions/cm2. Crosslinking was determined from gel permeation chromatography (GPC) of 1,2,4 trichlorobenzene sol fractions and increased with dose. Fourier transform infrared spectroscopy (FTIR) showed irradiation resulted in increased free radicals confirmed from increased carbonyl groups. Radiation damage, especially at the highest doses observed, also showed up in carbon double bonds and increased methyl end groups. Hydrogen annealing after ion irradiation resulted in 40- 50% decrease in FTIR absorption associated with carbonyl. The hydrogen annealing prevented further oxidation after aging for 1024 hours at 80oC. Hydrogen annealing was successful in healing radiation damage through reacting with the free radicals generated during proton irradiation. Polyethylenes, polyesters, and polyamides are used in diverse applications by the medical profession in the treatment of orthopedic impairments and cardiovascular disease and for neural implants. These artificial implants are sterilized with gamma irradiation prior to surgery and the resulting radiation damage can lead to accelerated deterioration of the implant properties. The findings in this study will greatly impact the continued use of these materials through the elimination of many problems associated with radiation

Results of treatment of Icenko-Cushing disease with proton beam irradiation of the pituitary gland

International Nuclear Information System (INIS)

Marova, E.I.; Starkova, N.T.; Kirpatovskaya, L.E.; Kolesnikova, G.S.; Bukhman, A.I.; Rozhinskaya, L.Ya.; Bel'chenko, L.V.

1987-01-01

Proton beam therapy was given to 98 patients with Icenko-Cushing disease aged 15 to 40. Mild cases were treated by proton beam irradiation only while severe cases were managed using proton beam therapy combined with unilateral adrenalectomy or ortho-para-DDD. Catamnesis duration varied from 3 to 5 years. In most cases the exposure dose was 80-90 Gy (50-110 Gy). The procedure was well tolerated by all the patients. A dynamic multipolar converting method with 15-20 entrance poles in the left temporal area was employed (with the beam energy of 200 MeV). Stabilization of the course of disease and some clinical improvement were observed in most of the patients 3-4 months after proton beam therapy. In 6-36 months after irradiation 90% of the patients showed normal biochemical indices and the absence of any clinical signs of the disease. Thus the results of proton beam therapy of 98 patients with Icenko-Cushing disease after a follow-up of 3-5 years showed a high efficacy of this type of treatment. The method can be used alone or in combination with unilateral adrenalectomy as well as with oral administration of ortho-para-DDD

The effects of oxide evolution on mechanical properties in proton- and neutron-irradiated Fe-9%Cr ODS steel

Energy Technology Data Exchange (ETDEWEB)

Swenson, M.J., E-mail: matthewswenson1@u.boisestate.edu [Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Dolph, C.K. [Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Wharry, J.P. [Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Purdue University, 400 Central Drive, West Lafayette, IN 47907 (United States)

2016-10-15

The objective of this study is to evaluate the effect of irradiation on the strengthening mechanisms of a model Fe-9%Cr oxide dispersion strengthened steel. The alloy was irradiated with protons or neutrons to a dose of 3 displacements per atoms at 500 °C. Nanoindentation was used to measure strengthening due to irradiation, with neutron irradiation causing a greater increase in yield strength than proton irradiation. The irradiated microstructures were characterized using transmission electron microscopy and atom probe tomography (APT). Cluster analysis reveals solute migration from the Y-Ti-O-rich nanoclusters to the surrounding matrix after both irradiations, though the effect is more pronounced in the neutron-irradiated specimen. Because the dissolved oxygen atoms occupy interstitial sites in the iron matrix, they contribute significantly to solid solution strengthening. The dispersed barrier hardening model relates microstructure evolution to the change in yield strength, but is only accurate if solid solution contributions to strengthening are considered simultaneously.

Si exfoliation by MeV proton implantation

International Nuclear Information System (INIS)

Braley, Carole; Mazen, Frédéric; Tauzin, Aurélie; Rieutord, François; Deguet, Chrystel; Ntsoenzok, Esidor

2012-01-01

Proton implantation in silicon and subsequent annealing are widely used in the Smart Cut™ technology to transfer thin layers from a substrate to another. The low implantation energy range involved in this process is usually from a few ten to a few hundred of keV, which enables the separation of up to 2 μm thick layers. New applications in the fields of 3D integration and photovoltaic wafer manufacturing raise the demand for extending this technology to higher energy in order to separate thicker layer from a substrate. In this work, we propose to investigate the effect of proton implantation in single crystalline silicon in the 1–3 MeV range which corresponds to a 15–100 μm range for the hydrogen maximum concentration depth. We show that despites a considerably lower hydrogen concentration at R p , the layer separation is obtained with fluence close to the minimum fluence required for low energy implantation. It appears that the fracture propagation in Si and the resulting surface morphology is affected by the substrate orientation. Defects evolution is investigated with Fourier Transform Infrared Spectroscopy. The two orientations reveal similar type of defects but their evolution under annealing appears to be different.

Multi-MW accelerator target material properties under proton irradiation at Brookhaven National Laboratory linear isotope producer

Science.gov (United States)

Simos, N.; Ludewig, H.; Kirk, H.; Dooryhee, E.; Ghose, S.; Zhong, Z.; Zhong, H.; Makimura, S.; Yoshimura, K.; Bennett, J. R. J.; Kotsinas, G.; Kotsina, Z.; McDonald, K. T.

2018-05-01

The effects of proton beams irradiating materials considered for targets in high-power accelerator experiments have been studied using the Brookhaven National Laboratory's (BNL) 200 MeV proton linac. A wide array of materials and alloys covering a wide range of the atomic number (Z) are being scoped by the high-power accelerator community prompting the BNL studies to focus on materials representing each distinct range, i.e. low-Z, mid-Z and high-Z. The low range includes materials such as beryllium and graphite, the midrange alloys such as Ti-6Al-4V, gum metal and super-Invar and finally the high-Z range pure tungsten and tantalum. Of interest in assessing proton irradiation effects are (a) changes in physiomechanical properties which are important in maintaining high-power target functionality, (b) identification of possible limits of proton flux or fluence above which certain materials cease to maintain integrity, (c) the role of material operating temperature in inducing or maintaining radiation damage reversal, and (d) phase stability and microstructural changes. The paper presents excerpt results deduced from macroscopic and microscopic post-irradiation evaluation (PIE) following several irradiation campaigns conducted at the BNL 200 MeV linac and specifically at the isotope producer beam-line/target station. The microscopic PIE relied on high energy x-ray diffraction at the BNL NSLS X17B1 and NSLS II XPD beam lines. The studies reveal the dramatic effects of irradiation on phase stability in several of the materials, changes in physical properties and ductility loss as well as thermally induced radiation damage reversal in graphite and alloys such as super-Invar.

Positronium formation in helium bubbles in 600 MeV proton-irradiated aluminium

DEFF Research Database (Denmark)

Jensen, K. O.; Eldrup, Morten Mostgaard; Singh, Bachu Narain

1985-01-01

Aluminium samples containing helium bubbles produced by 600 MeV proton irradiation at 430°C were investigated by positron annihilation; both lifetime and angular correlation measurements were made. The angular correlation curves contain an unusually narrow component. This component is associated...

Field ion microscopy study of depleted zones in tungsten after proton irradiation

International Nuclear Information System (INIS)

Farnum, D.J.; Sommer, W.F.; Inal, O.T.; Yu, J.

1986-01-01

Depleted zones in tungsten, that resulted from medium-energy proton irradiations, were studied using the Field Ion Microscope (FIM). The shapes and sizes of depleted zones is an important aspect of basic radiation damage. These data can be compared to models that have been suggested as well as aid development of new models. These depleted volumes are of interest not only for an understanding of basic radiation effects, but also because they affect material properties and can act as nucleation sites for voids or gas bubbles. Depleted zones were produced in annealed tungsten wires by irradiation with 600 to 800 MeV protons at the Los Alamos Meson Physics Facility. The defects observed in the irradiated samples included vacancies, depleted zones, grain boundaries, and dislocations. Single vacancies were the most commonly observed defect. Of the samples ''imaged,'' over 50 depleted zones were found within the area of high resolution in the area between the prominent [112] poles in a [110] oriented sample. The number of layers photographed in each sample was dependent upon the initial shape of the tip and ranged from 60 to 200 [110] sequential layers

Study of Microhardness and Electrical Properties of Proton Irradiated Polyether sulfone

International Nuclear Information System (INIS)

Quresh, A.

2006-01-01

Polyethersulfone (PES) films were irradiated with 3 MeV proton beams in the fluence range 10 1 3-10 1 5 ions/cm 2 . The irradiated samples were characterized by a Vickers' microhardness tester at a load of 100-1000 mN, and electrical properties in the frequency range 100 Hz to 1MHz by an LCR meter. It is observed that microhardness increases as fluence increases up to the fluence of 10 1 4 ions/cm 2 and decreases on further increase of the fluence. This may be attributed to the fact that a cross linking phenomenon dominates up to the fluence of 10 1 4 ions/cm 2 . There is an exponential increase in conductivity and the effect of irradiation is significant at higher fluences. The dielectric constant/loss was found to change significantly due to irradiation. It has been found that dielectric response in both pristine and irradiated samples obey universal law is given by ε α f n -1.These results were corroborated with structural changes observed in FTIR spectra of pristine and irradiated samples

Fusion neutron irradiation of Ni(Si) alloys at high temperature

International Nuclear Information System (INIS)

Huang, J.S.; Guinan, M.W.; Hahn, P.A.

1987-09-01

Two Ni-4% Si alloys, with different cold work levels, are irradiated with 14 MeV fusion neutrons at 623 K, and their Curie temperatures are monitored during irradiation. The results are compared to those of an identical alloy irradiated by 2 MeV electrons. The results show that increasing dislocation density increases the Curie temperature change rate. At the same damage rate, the Curie temperature change rate for the alloy irradiated by 14 MeV fusion neutrons is only 6 to 7% of that for an identical alloy irradiated by 2 MeV electrons. It is well known that the migration of radiation induced defects contributes to segregation of silicon atoms at sinks in this alloy, causing the Curie temperature changes. The current results imply that the relative free defect production efficiency decreases from one for the electron irradiated sample to 6 to 7% for the fusion neutron irradiated sample. 17 refs., 4 figs., 1 tab

Fusion neutron irradiation of Ni(Si) alloys at high temperature

Energy Technology Data Exchange (ETDEWEB)

Huang, J.S.; Guinan, M.W.; Hahn, P.A.

1987-09-01

Two Ni-4% Si alloys, with different cold work levels, are irradiated with 14 MeV fusion neutrons at 623 K, and their Curie temperatures are monitored during irradiation. The results are compared to those of an identical alloy irradiated by 2 MeV electrons. The results show that increasing dislocation density increases the Curie temperature change rate. At the same damage rate, the Curie temperature change rate for the alloy irradiated by 14 MeV fusion neutrons is only 6 to 7% of that for an identical alloy irradiated by 2 MeV electrons. It is well known that the migration of radiation induced defects contributes to segregation of silicon atoms at sinks in this alloy, causing the Curie temperature changes. The current results imply that the relative free defect production efficiency decreases from one for the electron irradiated sample to 6 to 7% for the fusion neutron irradiated sample. 17 refs., 4 figs., 1 tab.

Long-lived isotopes production in Pb-Bi target irradiated by high energy protons

Energy Technology Data Exchange (ETDEWEB)

Korovin, Y.A.; Konobeyev, A.Y.; Pereslavtsev, P.E. [Obninsk Institute of Nuclear Power Engineering, Obninsk (Russian Federation)

1995-10-01

Concentration of long-lived isotopes has been calculated for lead and lead-bismuth targets irradiated by protons with energy 0.4, 0.8, 1.0 and 1.6 GeV. The time of irradiation is equal from 1 month up to 2 years. The data libraries BROND, ADL and MENDL have been used to obtain the rate of nuclide transmutation. All calculations have been performed using the SNT code.

Cascade-probabilistic functions for protons and α-particles. Chapter 2

International Nuclear Information System (INIS)

1998-01-01

Cascade-probabilistic function (CPF) for protons and α-particles with taking into account of energy losses is developed. CPF calculation on computer are given. Application package for CPF calculation and selection of theoretical curves are realized on BEhSM-6 and EhS-1045 on Fortran-Dubna and Fortran-4 languages. Calculations for protons and α-particles in Al, Si, Ti, Cu, Mo under E 0 =1-50 MeV are carried out. Calculation results for protons shows that CPF behavior is analogous to case with electrons. Some peculiarities of calculation of CPF are emphasized. Energy losses contribution into CPF and radiation defects concentration are estimated. Radiation defect generation under proton and α-irradiation with use CPF with taking into account energy losses is considered

Swift heavy ion irradiation effects in SiC measured by positrons

Energy Technology Data Exchange (ETDEWEB)

Liszkay, L.; Kajcsos, Zs.; Szilagyi, E. [KFKI Research Inst. for Nuclear and Particle Physics, Budapest (Hungary); Havancsak, K. [Dept. for Solid State Physics, Eoetvoes Univ., Budapest (Hungary); Barthe, M.F.; Desgardin, P.; Henry, L. [CNRS Centre d' Etudes et de Recherches par Irradiation, Orleans (France); Battistig, G. [Research Inst. for Technical Physics and Materials Science, Budapest (Hungary); Skuratov, V.A. [Joint Inst. of Nuclear Research, Moscow (Russian Federation). Bogoliubov Lab. of Theoretical Physics

2001-07-01

N-type 6H SiC single crystals irradiated with swift (246 MeV) Kr ions at room temperature (the implantation depth being 21 {mu}m) were investigated by conventional positron lifetime and Doppler-broadening measurements as well as with the application of a slow positron beam. The fluence dependence of the irradiation-induced defects was studied in the 1 x 10{sup 10} - 1 x 10{sup 14} ion cm{sup -2} range. In the fluence and depth range studied, no sign of amorphization (or creation of large voids) was seen in the Kr irradiated crystals. The positron annihilation results were compared with atomic displacement calculations by TRIM. A simple model was used to describe the trapping effect and determine the relationship between the atomic displacement densities and the positron trapping. The 225 ps lifetime of the open-volume defects created suggests that the V{sub Si}-V{sub C} divacancy is the dominant trapping site in the implanted zone. (orig.)

A comparative study of the Si diodes of N type applied to high-dose range dosimetry

International Nuclear Information System (INIS)

Pascoalino, Kelly Cristina da Silva; Goncalves, Josemary Angelica Correa; Tobias, Carmen Cecilia Bueno

2011-01-01

This work presents the results of the comparative studies of floating-zone (Fz) and magnetic Czochralski (MCz) n-type silicon diodes as gamma dosimeters. The devices were irradiated with gamma rays from 60 Co source, Gammacell 220, at Radiation Technology Center (CTR-IPEN/CNEN-SP) with the dose rate of 2 kGy/h. The results with total absorbed doses of approximately 1 MGy showed that the devices studied are tolerant to radiation damages and then can be used as an online dosimeter in high doses radiation processing. (author)

Hall effect measurements on proton-irradiated ROSE samples

International Nuclear Information System (INIS)

Biggeri, U.; Bruzzi, M.; Borchi, E.

1997-01-01

Bulk samples obtained from two wafers of a silicon monocrystal material produced by Float-Zone refinement have been analyzed using the four-point probe method. One of the wafers comes from an oxygenated ingot; two sets of pure and oxygenated samples have been irradiated with 24 GeV/c protons in the fluence range from 10 13 p/cm 2 to 2x10 14 p/cm 2 . Van der Pauw resistivity and Hall coefficient have been measured before and after irradiation as a function of the temperature. A thermal treatment (30 minutes at 100C) has been performed to accelerate the reverse annealing effect in the irradiated silicon. The irradiated samples show the same exponential dependence of the resistivity and of the Hall coefficient on the temperature from 370K to 100K, corresponding to the presence of radiation-induced deep energy levels around 0.6-0.7eV in the silicon gap. The free carrier concentrations (n, p) have been evaluated in the investigated fluence range. The inversion of the conductivity type from n to p occurred respectively at 7x10 13 p/cm 2 and at 4x10 13 p/cm 2 before and after the annealing treatment, for both the two sets. Only slight differences have been detected between the pure and oxygenated samples

Beta-decay study of T{sub z}=-2 proton-rich nucleus {sup 24}Si

Energy Technology Data Exchange (ETDEWEB)

Ichikawa, Y.; Iwasaki, H.; Nakao, T.; Ong, H.J.; Onishi, T.K.; Suzuki, D.; Suzuki, H.; Suzuki, M.K. [University of Tokyo, Department of Physics, Tokyo (Japan); Kubo, T.; Aoi, N.; Fukuda, N.; Motobayashi, T.; Yamada, K.N.; Sakurai, H. [RIKEN, RIKEN Nishina Center, Saitama (Japan); Banerjee, V.; Chakrabarti, A. [Variable Energy Cyclotron Centre, Kolkata (India); Kubono, S.; Yamaguchi, H. [University of Tokyo, Center for Nuclear Study, Tokyo (Japan); Nakabayashi, T.; Nakamura, T.; Okumura, T. [Tokyo Institute of Technology, Department of Physics, Tokyo (Japan); Teranishi, T. [Kyushu University, Department of Physics, Fukuoka (Japan)

2009-12-15

{beta} -decay spectroscopy on a T{sub z}=-2 proton-rich nucleus {sup 24}Si was performed. The decay scheme of {sup 24}Si was reconstructed by the {beta} -delayed {gamma} -ray and proton measurements. Two {beta} branches to the bound 1{sub 1}{sup +} and 1{sub 2}{sup +} states in {sup 24}Al were observed for the first time. The observation of the allowed transition firmly established the spin-parity assignment for the 1{sub 2}{sup +} states. The branching ratios to the 1{sub 1}{sup +} and 1{sub 2}{sup +} states were determined to be 31(4)% and 23.9(15)%, respectively. The branching ratios to three unbound states in {sup 24}Al including a new level at 6.735MeV were also determined for the first time. The level structure of {sup 24}Al was compared with its mirror nucleus {sup 24}Na. The Thomas-Ehrman shift on the 1{sub 2}{sup +} state indicates s -wave dominance in the state as well as a characteristic behavior of the weakly bound s-wave proton in {sup 24}Al. (orig.)

Low damage electrical modification of 4H-SiC via ultrafast laser irradiation

Science.gov (United States)

Ahn, Minhyung; Cahyadi, Rico; Wendorf, Joseph; Bowen, Willie; Torralva, Ben; Yalisove, Steven; Phillips, Jamie

2018-04-01

The electrical properties of 4H-SiC under ultrafast laser irradiation in the low fluence regime (engineering spatially localized structural and electronic modification of wide bandgap materials such as 4H-SiC with relatively low surface damage via low temperature processing.

Effect of Si ion irradiation on polycrystalline CdS thin film grown from novel photochemical deposition technique

International Nuclear Information System (INIS)

Soundeswaran, S.; Senthil Kumar, O.; Ramasamy, P.; Kabi Raj, D.; Avasthi, D.K.; Dhanasekaran, R.

2005-01-01

CdS thin films have been deposited from aqueous solution by photochemical reactions. The solution contains Cd(CH 3 COO) 2 and Na 2 S 2 O 3 , and pH is controlled in an acidic region by adding H 2 SO 4 . The solution is illuminated with light from a high-pressure mercury-arc lamp. CdS thin films are formed on a glass substrate by the heterogeneous nucleation and the deposited thin films have been subjected to high-energy Si ion irradiations. Si ion irradiation has been performed with an energy of 80 MeV at fluences of 1x10 11 , 1x10 12 , 1x10 13 and 1x10 14 ions/cm 2 using tandem pelletron accelerator. The irradiation-induced changes in CdS thin films are studied using XRD, Raman spectroscopy and photoluminescence. Broadening of the PL emission peak were observed with increasing irradiation fluence, which could be attributed to the band tailing effect of the Si ion irradiation. The lattice disorder takes place at high Si ion fluences

Depth distribution of Frank loop defects formed in ion-irradiated stainless steel and its dependence on Si addition

Energy Technology Data Exchange (ETDEWEB)

Chen, Dongyue, E-mail: dychen@safety.n.t.u-tokyo.ac.jp [The University of Tokyo, Department of Nuclear Engineering and Management, School of Engineering, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656 (Japan); Murakami, Kenta [The University of Tokyo, Nuclear Professional School, School of Engineering, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki 319-1188 (Japan); Dohi, Kenji; Nishida, Kenji; Soneda, Naoki [Central Research Institute of Electric Power Industry, 2-11-1 Iwado-kita, Komae, Tokyo 201-8511 (Japan); Li, Zhengcao, E-mail: zcli@tsinghua.edu.cn [Tsinghua University, School of Materials Science and Engineering, Beijing 100084 (China); Liu, Li; Sekimura, Naoto [The University of Tokyo, Department of Nuclear Engineering and Management, School of Engineering, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656 (Japan)

2015-12-15

Although heavy ion irradiation is a good tool to simulate neutron irradiation-induced damages in light water reactor, it produces inhomogeneous defect distribution. Such difference in defect distribution brings difficulty in comparing the microstructure evolution and mechanical degradation between neutron and heavy ion irradiation, and thus needs to be understood. Stainless steel is the typical structural material used in reactor core, and could be taken as an example to study the inhomogeneous defect depth distribution in heavy ion irradiation and its influence on the tested irradiation hardening by nano-indentation. In this work, solution annealed stainless steel model alloys are irradiated by 3 MeV Fe{sup 2+} ions at 400 °C to 3 dpa to produce Frank loops that are mainly interstitial in nature. The silicon content of the model alloys is also tuned to change point defect diffusion, so that the loop depth distribution influenced by diffusion along the irradiation beam direction could be discussed. Results show that in low Si (0% Si) and base Si (0.42% Si) samples the depth distribution of Frank loop density quite well matches the dpa profile calculated by the SRIM code, but in high Si sample (0.95% Si), the loop number density in the near-surface region is very low. One possible explanation could be Si’s role in enhancing the effective vacancy diffusivity, promoting recombination and thus suppressing interstitial Frank loops, especially in the near-surface region, where vacancies concentrate. By considering the loop depth distribution, the tested irradiation hardening is successfully explained by the Orowan model. A hardening coefficient of around 0.30 is obtained for all the three samples. This attempt in interpreting hardening results may make it easier to compare the mechanical degradation between different irradiation experiments.

Defect microstructure in copper alloys irradiated with 750 MeV protons

DEFF Research Database (Denmark)

Zinkle, S.J.; Horsewell, A.; Singh, B.N.

1994-01-01

Transmission electron microscopy (TEM) disks of pure copper and solid solution copper alloys containing 5 at% of Al, Mn, or Ni were irradiated with 750 MeV protons to damage levels between 0.4 and 2 displacements per atom (dpa) at irradiation temperatures between 60 and 200 degrees C. The defect...... significant effect on the total density of small defect clusters, but they did cause a significant decrease in the fraction of defect clusters resolvable as SFT to similar to 20 to 25%. In addition, the dislocation loop density (> 5 nm diameter) was more than an order of magnitude higher in the alloys...